Light-emitting diode display device

Abstract

This invention solves the problems of ambient light reflection and brightness reduction in light-emitting diode (LED) display devices. [Solution] The present invention provides a light-emitting diode display device 100, which includes a display panel 101 comprising a light-emitting diode provided in each of the first light-emitting region EA1 of the first pixel region P1, the second light-emitting region EA2 of the second pixel region P2, and the third light-emitting region EA3 of the third pixel region P3; a transmittance variable layer 120 located in each of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3; a touch electrode layer located on one side of the transmittance variable layer 120 and comprising a first touch electrode 112 provided in each light-emitting region, and a second touch electrode 113 provided in the non-light-emitting regions NEA1 and NEA2 between the light-emitting regions; and a drive electrode 132 located on the other side of the transmittance variable layer 120 and corresponding to the first touch electrode 112.

Description

[Technical Field]

[0001] The present invention relates to a light-emitting diode display device, and more particularly to a light-emitting diode display device that can prevent problems of ambient light reflection and unevenness caused by ambient light reflection without reducing brightness. [Background technology]

[0002] With the increasing size of display devices, there is a growing demand for flat display devices that occupy less space. As one such flat display element, organic light-emitting diode (OLED) display devices and inorganic light-emitting diode (ILED) display devices have been developed and are being adopted in a variety of fields.

[0003] For example, in an organic light-emitting diode (OLED) display device, holes from the anode and electrons from the cathode combine in the organic light-emitting layer to form excitons, resulting in an unstable excited state. Light is emitted when the OLED returns from this state to a stable ground state.

[0004] Unlike liquid crystal displays, light-emitting diode (LED) displays do not require a polarizing filter. However, LED displays without a polarizing filter suffer from a problem of reduced display quality due to reflection of ambient light. To minimize this reflection, LED displays are equipped with a polarizing filter on the display surface side.

[0005] Light-emitting diode (LED) display devices equipped with polarizing plates minimize ambient light reflection, but the polarizing plates cause a decrease in brightness. [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] The present invention aims to solve the problems of ambient light reflection and brightness reduction in light-emitting diode (LED) display devices. [Means for solving the problem]

[0007] To solve the aforementioned problems, the present invention provides a light-emitting diode display device comprising: a display panel including a first pixel region, a second pixel region, and a third pixel region; light-emitting diodes provided in each of the first light-emitting region of the first pixel region, the second light-emitting region of the second pixel region, and the third light-emitting region of the third pixel region; a variable transmittance layer located on the display panel and located in each of the first light-emitting region, the second light-emitting region, and the third light-emitting region; a touch electrode layer located on one side of the variable transmittance layer and including a first touch electrode provided in each of the first light-emitting region, the second light-emitting region, and the third light-emitting region, and a second touch electrode provided in each of the first non-light-emitting region between the first light-emitting region and the second non-light-emitting region between the second light-emitting region and the third light-emitting region; and a drive electrode located on the other side of the variable transmittance layer and corresponding to the first touch electrode.

[0008] The present invention relates to a light-emitting diode display device, further comprising spacers located within the transmittance variable layer and corresponding to each of the first light-emitting region, the second light-emitting region, and the third light-emitting region.

[0009] In the light-emitting diode display device of the present invention, the thickness of the spacer is smaller than the distance between the drive electrode and the first touch electrode.

[0010] In the light-emitting diode display device of the present invention, the spacer is characterized by being dome-shaped.

[0011] In the light-emitting diode display device of the present invention, the transmittance variable layer is characterized in that it is a light-absorbing layer containing charged black particles.

[0012] The light-emitting diode display device of the present invention is further characterized by including a partition wall located in the first non-light-emitting region and the second non-light-emitting region, which separates the transmittance variable layer.

[0013] The light-emitting diode display device of the present invention is characterized by further comprising a first black matrix and a second black matrix located on the transmittance variable layer and located in the first non-emitting region and the second non-emitting region, respectively, and a first color filter layer, a second color filter layer, and a third color filter layer located on the transmittance variable layer and corresponding to the first light-emitting region, the second light-emitting region, and the third light-emitting region, respectively.

[0014] In the light-emitting diode display device of the present invention, the width of each of the first black matrix and the second black matrix is ​​larger than the width of the partition wall.

[0015] In the light-emitting diode display device of the present invention, the transmittance variable layer is characterized by containing electrocolor-changing particles.

[0016] The light-emitting diode display device of the present invention is further characterized by including a partition wall located in the first non-light-emitting region and the second non-light-emitting region, which separates the transmittance variable layer.

[0017] In the light-emitting diode display device of the present invention, the touch electrode layer is located between the display panel and the transmittance variable layer.

[0018] The light-emitting diode display device of the present invention is characterized by further comprising a bridge electrode located on the partition wall, which is connected to the second touch electrode via a contact hole provided in the partition wall.

[0019] In the light-emitting diode display device of the present invention, the drive electrode is characterized in that it is located between the display panel and the transmittance variable layer.

[0020] The light-emitting diode display device of the present invention further includes a bridge electrode located on the partition wall, and the second touch electrode is connected to the bridge electrode through a contact hole provided in the partition wall.

[0021] In the light-emitting diode display device of the present invention, in the first driving mode, the transmittance variable layer has a first transmittance in each of the first light-emitting region, the second light-emitting region, and the third light-emitting region, and in the second driving mode, the transmittance variable layer has a second transmittance lower than the first transmittance in each of the first light-emitting region, the second light-emitting region, and the third light-emitting region.

[0022] In the light-emitting diode display device of the present invention, in the first driving mode, the light-emitting diode is in an on state, and in the second driving mode, the light-emitting diode is in an off state.

[0023] The light-emitting diode display device of the present invention further includes a first black matrix and a second black matrix located on the transmittance variable layer and respectively located in the first non-light-emitting region and the second non-light-emitting region, and a first color filter layer, a second color filter layer, and a third color filter layer located on the transmittance variable layer and corresponding to the first light-emitting region to the third light-emitting region.

[0024] In the light-emitting diode display device of the present invention, the display panel further includes a first bank located in the first non-light-emitting region and a second bank located in the second non-light-emitting region.

[0025] In the light-emitting diode display device of the present invention, the width of the first bank is larger than the width of the first black matrix, and the width of the second bank is larger than the width of the second black matrix.

[0026] In the light-emitting diode display device of the present invention, the width of the first black matrix is ​​larger than the width of the second touch electrode.

[0027] The light-emitting diode display device of the present invention includes a transmissibility-variable touch panel located at the top of the display panel, the transmissibility-variable touch panel includes a transmissibility-variable layer located at the top of the display panel and comprising a first light-emitting region, a second light-emitting region, and a third light-emitting region; a touch electrode layer located on one side of the transmissibility-variable layer and including a first touch electrode provided in each of the first light-emitting region, the second light-emitting region, and the third light-emitting region, and a second touch electrode provided in each of the first non-light-emitting region between the first light-emitting region and the second non-light-emitting region between the second light-emitting region and the third light-emitting region; and a drive electrode located on the other side of the transmissibility-variable layer and corresponding to the first touch electrode.

[0028] In such a light-emitting diode display device, the voltage difference between the drive electrode and the first touch electrode drives the transmittance variable layer, and the transmittance in the first light-emitting region, the second light-emitting region, and the third light-emitting region is adjusted according to the on / off state of the light-emitting diode. Therefore, it is possible to reduce the reflection of ambient light without decreasing brightness and prevent defects such as rainbow unevenness caused by ambient light reflection.

[0029] In other words, the light-emitting diode display device of the present invention enables the display of high-brightness images with low ambient light reflection and achieves the effect of low-power operation (ESG).

[0030] Furthermore, by further including a partition wall, the light-emitting diode display device of the present invention can uniformly distribute the light-absorbing layer or electrocolor-changing material layer of the variable transmittance layer in each of the first, second, and third pixel regions. As a result, the characteristics of ambient light reflection in the first, second, and third pixel regions can be made uniform.

[0031] Furthermore, in the light-emitting diode display device of the present invention, the variable transmittance layer further includes a dome-shaped spacer, which concentrates the light from the display panel and improves light efficiency.

[0032] Furthermore, by including an electrochromic material layer containing electrochromic particles in the variable transmittance layer, it is possible to prevent a decrease in the area of ​​the light-emitting region and provide a light-emitting diode display device that is both bright and highly efficient.

[0033] Furthermore, since the electrocolor-changing material layer containing electrocolor-changing particles allows for adjustment of transmittance without the need for spacers, it can exhibit uniform anti-reflection properties of external light in both the central and edge areas of the light-emitting region. Therefore, defects such as rainbow-like unevenness caused by external light reflection can be efficiently prevented. [Brief explanation of the drawing]

[0034] [Figure 1] This is a schematic circuit diagram showing the light-emitting diode display device according to the present invention. [Figure 2A] This is a schematic plan view illustrating a light-emitting diode display device according to a first embodiment of the present invention. [Figure 2B] This is a schematic plan view illustrating a light-emitting diode display device according to a first embodiment of the present invention. [Figure 3A] This is a schematic cross-sectional view showing a light-emitting diode display device according to a first embodiment of the present invention. [Figure 3B] This is a schematic cross-sectional view showing a light-emitting diode display device according to a first embodiment of the present invention. [Figure 4] This is a schematic cross-sectional view showing the display panel of a light-emitting diode display device according to a first embodiment of the present invention. [Figure 5] This is a schematic cross-sectional view showing a light-emitting diode display device according to a second embodiment of the present invention. [Figure 6] This is a schematic cross-sectional view showing a light-emitting diode display device according to a third embodiment of the present invention. [Figure 7] This is a schematic cross-sectional view showing a light-emitting diode display device according to a fourth embodiment of the present invention. [Modes for carrying out the invention]

[0035] The terminology used in the embodiments of this invention has been selected, as far as possible, to be common terms widely used today, but may differ depending on the intent of the articulators, case law, the emergence of new technologies, etc. Where the applicant has arbitrarily selected specific terms, their meanings will be detailed. Therefore, terms used herein should be defined based on their meaning and the overall content of this disclosure.

[0036] Throughout the specification, if a part is described as "including" or "comprising" a certain component, unless otherwise specified, this does not exclude other components, but rather may include other components.

[0037] Throughout the specification, the expression "at least one of a, b, and c" may encompass "a alone," "b alone," "c alone," "a and b," "a and c," "b and c," or "all of a, b, and c." The advantages and features of the present invention, and how they are achieved, will become clearer with reference to the embodiments detailed with the drawings.

[0038] The shapes, areas, ratios, angles, and quantities disclosed in the drawings illustrating embodiments of the present invention are illustrative and the present invention is not limited thereto. When describing embodiments, if it is determined that a specific explanation of related prior art would obscure the gist of the embodiments, such detailed explanation will be omitted.

[0039] Wherever "equipped," "included," "possessed," "have," or "become" is used in this specification, other parts may be added. Furthermore, wherever a component is described in the singular form, it may be interpreted as plural unless otherwise explicitly stated. In interpreting components, a margin of error is included even without explicit mention.

[0040] For example, when describing the positional relationship between two components using terms such as "above," "above," "below," or "beside," one or more other components may be located between those two components. When an element or layer is described as "on" another element or layer, this includes all cases where another layer or other element is directly above or between it and the other element.

[0041] Furthermore, while terms such as "first" and "second" are used to distinguish the components, the components are not limited to these terms. Therefore, the first component mentioned below may also be the second component within the technical concept of the present invention.

[0042] The area, length, and thickness of each component described in the specification are illustrated for illustrative purposes only and do not necessarily limit the present invention to them.

[0043] The features of each of the multiple embodiments of the present invention can be combined or integrated partially or entirely, enabling a wide range of technically diverse interconnections and drives. Furthermore, each embodiment can be implemented independently of or in conjunction with one another.

[0044] Furthermore, the terms described later are defined in consideration of their function in implementing the present invention, and may differ depending on the intent or conventions of the user or operator. Therefore, these terms should be defined based on the overall content of this specification.

[0045] Unless otherwise specified, the transistors constituting the pixel circuit of the present invention may include at least one of the following: oxide thin film transistors (Oxide TFTs), amorphous silicon TFTs (a-Si TFTs), and low-temperature polysilicon TFTs (Low Temperature Polysilicon TFTs (LTPS TFTs).

[0046] The following embodiments will primarily describe organic light-emitting diode (LED) display devices. However, embodiments of the present invention are not limited to organic light-emitting diode (LED) display devices and may also be used in inorganic light-emitting diode (LED) display devices containing inorganic light-emitting materials. For example, embodiments of the present invention can also be used in quantum dot display devices. That is, the display device of the present invention may be an organic light-emitting diode display device containing an organic light-emitting diode, or a quantum dot light-emitting diode display device containing a quantum dot light-emitting diode.

[0047] Expressions such as "First," "Second," and "Third" are terms used to distinguish the configuration of each embodiment, and the embodiments are not limited to these terms. Therefore, the same term may refer to different configurations depending on the embodiment.

[0048] The present invention's light-emitting diode display device will now be described with reference to the drawings.

[0049] Figure 1 is a schematic circuit diagram showing a light-emitting diode display device according to the present invention.

[0050] As shown in Figure 1, the light-emitting diode (LED) display device has gate wiring GL, data wiring DL, and power wiring PL that intersect with each other and define the pixel region P. A switching thin-film transistor Ts, a driving thin-film transistor Td, a storage capacitor Cst, and a light-emitting diode D are formed in the pixel region P. The pixel region P may include red pixel regions, green pixel regions, and blue pixel regions.

[0051] The switching thin-film transistor Ts is connected to the gate wiring GL and data wiring DL, while the driving thin-film transistor Td and storage capacitor Cst are connected between the switching thin-film transistor Ts and the power wiring PL. The light-emitting diode D is connected to the driving thin-film transistor Td.

[0052] In such a light-emitting diode display device, when the switching thin-film transistor Ts turns on in response to a gate signal applied to the gate wiring GL, the data signal applied to the data wiring DL is applied via the switching thin-film transistor Ts to the gate electrode of the driving thin-film transistor Td and one electrode of the storage capacitor Cst.

[0053] The driving thin-film transistor Td turns on in response to the data signal applied to its gate electrode. As a result, a current proportional to the data signal flows from the power supply wiring PL through the driving thin-film transistor Td to the light-emitting diode D, and the light-emitting diode D emits light with a brightness proportional to the current flowing through the driving thin-film transistor Td.

[0054] At this time, the storage capacitor Cst is charged with a voltage proportional to the data signal, so that the voltage of the gate electrode of the drive thin-film transistor Td is kept constant for one frame.

[0055] Therefore, the light-emitting diode display device can display the desired image.

[0056] Figures 2A and 2B are schematic plan views illustrating a light-emitting diode display device according to a first embodiment of the present invention. Figure 2A is a schematic plan view showing the touch electrode layer of a variable transmittance touch panel, and Figure 2B is a schematic plan view showing the drive electrode of a variable transmittance touch panel.

[0057] The light-emitting diode display device of the present invention comprises a display panel including light-emitting diodes and a transmissive touch panel located above the display panel, wherein the transmissive touch panel includes a transmissive layer, a touch electrode layer located on one side of the transmissive layer, and a drive electrode located on the other side of the transmissive layer.

[0058] As shown in Figure 2A, the touch electrode layer 111 includes a first touch electrode row comprising a plurality of first touch electrodes 112 arranged in a first direction X, and a second touch electrode row comprising a plurality of second touch electrodes 113 arranged in the first direction X and spaced apart from the first touch electrode row in a second direction Y. The touch electrode layer 111 may be provided on a first buffer layer (102 in Figure 3A).

[0059] Multiple first touch electrodes 112 of the first touch electrode array are connected to each other, and multiple second touch electrodes 113 of the second touch electrode array are connected to each other.

[0060] Each of the multiple first touch electrode rows is connected to the first touch electrode pad TP1 via multiple connecting wires at its end in the first direction X. Each second touch electrode 113 of the second touch electrode row is connected via a bridge electrode and is connected to the second touch electrode pad TP2 via multiple connecting wires at its end in the second direction Y.

[0061] As shown in Figure 2B, the multiple drive electrodes 132 are arranged along a first direction X and a second direction Y. The multiple drive electrodes 132 arranged in the second direction Y are connected via connecting parts. The multiple drive electrodes 132 arranged in the first direction X and the second direction Y are connected to a drive electrode pad (not shown). The drive electrodes 132 can be provided on a transmittance variable layer (120 in Figure 3A).

[0062] The first touch electrode 112 is superimposed on the drive electrode 132. For example, the drive electrode 132 may be located above the first touch electrode 112 and may have the same width (area) as the first touch electrode 112.

[0063] Figures 3A and 3B are schematic cross-sectional views of a light-emitting diode display device according to a first embodiment of the present invention, and are cross-sectional views along the cutting line I-I' in Figure 2A or Figure 2B. Figure 3A shows the ON state of the light-emitting diode, and Figure 3B shows the OFF state of the light-emitting diode.

[0064] As shown in Figures 3A and 3B, the light-emitting diode display device 100 according to the first embodiment of the present invention includes a display panel 101 and a transmittance variable touch panel 110 located above the display panel 101.

[0065] Furthermore, the light-emitting diode display device 100 may further include a color filter panel 150 located above the variable transmittance touch panel 110. That is, the variable transmittance touch panel 110 is located between the display panel 101 and the color filter panel 150.

[0066] Furthermore, the light-emitting diode display device 100 may further include at least one of a first buffer layer 102 located between the display panel 101 and the variable transmittance touch panel 110, and a second buffer layer 103 located between the variable transmittance touch panel 110 and the color filter panel 150. Each of the first buffer layer 102 and the second buffer layer 103 is made of silicon oxide (SiO2) or silicon nitride (SiN x The structure may be a single layer made of an inorganic insulating material such as ) or an organic insulating material such as photoacrylic or benzocyclobutene, or it may be a multilayer structure.

[0067] The display panel 101 may be an organic light-emitting diode display panel or an inorganic light-emitting diode display panel.

[0068] Referring to Figure 4, a schematic cross-sectional view showing a display panel of a light-emitting diode display device according to a first embodiment of the present invention, the display panel 101 includes a substrate 202 including a pixel region P, and a light-emitting diode D corresponding to the pixel region P and located on the upper part of the substrate 202.

[0069] Pixel region P may include a first pixel region P1 to a third pixel region P3. The first pixel region P1 may be a red pixel region, the second pixel region P2 may be a green pixel region, and the third pixel region P3 may be a blue pixel region.

[0070] Each of the first to third pixel regions P1 to P3 includes an emitting region and a non-emitting region. For example, the substrate 202 can define a first emitting region EA1 of the first pixel region P1, a second emitting region EA2 of the second pixel region P2, a third emitting region EA3 of the third pixel region P3, a first non-emitting region NEA1 between the first emitting region EA1 and the second emitting region EA2, and a second non-emitting region NEA2 between the second emitting region EA2 and the third emitting region EA3.

[0071] The substrate 202 may be a glass substrate or a plastic substrate. For example, the substrate 202 may be any one of the following: a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylene naphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate, or a polycarbonate (PC) substrate.

[0072] In one embodiment of the present invention, the substrate 202 may have a three-layer structure including a first polyimide film, a second polyimide film, and an interlayer inorganic film between the first and second polyimide films. The interlayer inorganic film may be silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ).

[0073] A first light-shielding pattern 204 is provided on the substrate 202. The first light-shielding pattern 204 serves to block incident light from below the substrate 202. For example, the first light-shielding pattern 204 can be formed from a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may be a single-layer structure or a multi-layer structure.

[0074] Although not shown in Figure 4, silicon oxide (SiO2) and silicon nitride (SiN) are placed between the substrate 202 and the first light-shielding pattern 204. x A buffer layer made of an inorganic insulating material such as ) can be provided.

[0075] A third buffer layer 206 is provided on the upper part of the substrate 202, covering the first light-shielding pattern 204. The third buffer layer 206 serves to block moisture and oxygen from the outside. For example, the third buffer layer 206 is made of silicon oxide (SiO2) or silicon nitride (SiN x It consists of an inorganic insulating material such as ), and may have a single-layer structure or a multilayer structure. If the first light-shielding pattern 204 is omitted, the third buffer layer 206 can be formed in contact with the entire surface of the substrate 202.

[0076] A first semiconductor layer 210 corresponding to the first light-shielding pattern 204 is placed on the third buffer layer 206. The first semiconductor layer 210 may include any one of the following: a polycrystalline semiconductor material, an amorphous semiconductor material, or an oxide semiconductor material. If the first light-shielding pattern 204 and the third buffer layer 206 are omitted, the first semiconductor layer 210 can be formed directly on the substrate 202.

[0077] In embodiments of the present invention, the first semiconductor layer 210 can be formed from a polycrystalline semiconductor material such as polycrystalline silicon. The first semiconductor layer 210 includes a first channel region 210a and first source regions 210b and first drain regions 210c on both sides of the first channel region 210a. The first source region 210b and the first drain region 210c are doped with impurities.

[0078] A first gate insulating film 212 is provided above the third buffer layer 206, covering the first semiconductor layer 210. The first gate insulating film 212 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ) and may have a single-layer structure or a multi-layer structure.

[0079] A first gate electrode 214 corresponding to the first channel region 210a of the first semiconductor layer 210 is provided on the first gate insulating film 212. A first capacitor electrode 216 spaced apart from the first gate electrode 214 is also provided on the first gate insulating film 212.

[0080] The first gate electrode 214 and the first capacitor electrode 216 can be located in the same layer and formed from the same material. For example, each of the first gate electrode 214 and the first capacitor electrode 216 can be formed from a metallic material such as one of the following: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer structure or a multilayer structure.

[0081] A first interlayer insulating film 218 is provided above the first gate insulating film 212, covering the first gate electrode 214 and the first capacitor electrode 216. The first interlayer insulating film 218 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ) and may have a single-layer structure or a multi-layer structure.

[0082] A second capacitor electrode 230 corresponding to the first capacitor electrode 216 and a second light-shielding pattern 232 spaced apart from the second capacitor electrode 230 are provided on the first interlayer insulating film 218.

[0083] The second capacitor electrode 230 and the second light-shielding pattern 232 can be located in the same layer and formed from the same material. For example, each of the second capacitor electrode 230 and the second light-shielding pattern 232 can be formed from a metallic material such as one of the following: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer or multi-layer structure.

[0084] A second interlayer insulating film 234 is provided above the first interlayer insulating film 218, covering the second capacitor electrode 230 and the second light-shielding pattern 232. The second interlayer insulating film 234 serves to block moisture and oxygen from the outside. For example, the second interlayer insulating film 234 is made of silicon oxide (SiO2) or silicon nitride (SiN x It consists of an inorganic insulating material such as ) or an organic insulating material such as photoacrylic or benzocyclobutene, and may have a single-layer structure or a multi-layer structure.

[0085] A second semiconductor layer 236 corresponding to a second light-shielding pattern 232 is provided on the second interlayer insulating film 234. The second semiconductor layer 236 may include any one of the following: a polycrystalline semiconductor material, an amorphous semiconductor material, or an oxide semiconductor material.

[0086] In embodiments of the present invention, the second semiconductor layer 236 can be formed from an oxide semiconductor material such as indium gallium zinc oxide (IGZO), zinc oxide (ZnO), tin oxide (SnO2), copper oxide (Cu2O), nickel oxide (NiO), indium tin zinc oxide (ITZO), or indium aluminum zinc oxide (IAZO). The second semiconductor layer 236 includes a second channel region 236a and second source regions 236b and second drain regions 236c on either side of the second channel region 236a. The second source region 236b and the second drain region 236c are doped with impurities.

[0087] A second gate insulating film 238 is provided above the second interlayer insulating film 234, covering the second semiconductor layer 236. The second gate insulating film 238 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ) and may have a single-layer structure or a multi-layer structure.

[0088] On the second gate insulating film 238, a second gate electrode 240 corresponding to the second channel region 236a of the second semiconductor layer 236 is provided. For example, the second gate electrode 240 is made of a metallic substance such as any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer structure or a multilayer structure.

[0089] On top of the second gate insulating film 238, a third interlayer insulating film 242 covering the second gate electrode 240 is provided. The third interlayer insulating film 242 is made of an inorganic insulating substance such as silicon oxide (SiO2) or silicon nitride (SiN x ) and may have a single-layer structure or a multilayer structure.

[0090] On the third interlayer insulating film 242, first source electrodes 244a, first drain electrodes 244b, second source electrodes 246a, and second drain electrodes 246b are provided so as to be spaced apart from each other.

[0091] The first source electrode 244a and the first drain electrode 244b are connected to the first source region 210b and the first drain region 210c of the first semiconductor layer 210 through contact holes formed in the third interlayer insulating film 242, the second gate insulating film 238, the second interlayer insulating film 234, the first interlayer insulating film 218, and the first gate insulating film 212, respectively. Also, the first source electrode 244a is connected to the first capacitor electrode 216 through contact holes formed in the third interlayer insulating film 242, the second gate insulating film 238, the second interlayer insulating film 234, and the first interlayer insulating film 218.

[0092] The second source electrode 246a and the second drain electrode 246b are connected to the second source region 236b and the second drain region 236c of the second semiconductor layer 236, respectively, via contact holes formed in the third interlayer insulating film 242 and the second gate insulating film 238. The second source electrode 246a is also connected to the second capacitor electrode 230 via contact holes formed in the third interlayer insulating film 242, the second gate insulating film 238, and the second interlayer insulating film 234.

[0093] The first source electrode 244a, the first drain electrode 244b, the second source electrode 246a, and the second drain electrode 246b can be located in the same layer and formed from the same material. For example, each of the first source electrode 244a, the first drain electrode 244b, the second source electrode 246a, and the second drain electrode 246b can be formed from a metallic material such as one of the following: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer structure or a multi-layer structure.

[0094] The first semiconductor layer 210, the first gate electrode 214, the first source electrode 244a, and the first drain electrode 244b constitute the first thin-film transistor T1, and the second semiconductor layer 236, the second gate electrode 240, the second source electrode 246a, and the second drain electrode 246b constitute the second thin-film transistor T2. For example, the first thin-film transistor T1 may be a switching thin-film transistor, and the second thin-film transistor T2 may be a driving thin-film transistor. In addition, the first capacitor electrode 216 and the second capacitor electrode 230 constitute a storage capacitor.

[0095] The display panel 101 includes a first thin-film transistor T1 and a second thin-film transistor T2, where each of the first semiconductor layer 210 of the first thin-film transistor T1 and the second semiconductor layer 236 of the second thin-film transistor T2 may contain one of a polycrystalline semiconductor material, an amorphous semiconductor material, or an oxide semiconductor material, and at least one of the first semiconductor layer 210 of the first thin-film transistor T1 and the second semiconductor layer 236 of the second thin-film transistor T2 may contain an oxide semiconductor material. In one embodiment of the present invention, the first semiconductor layer 210 of the first thin-film transistor T1 may be formed from a polycrystalline semiconductor material, for example, polycrystalline silicon, and the second semiconductor layer 236 of the second thin-film transistor T2 may be formed from an oxide semiconductor material.

[0096] In Figure 4, the first gate electrode 214, the first source electrode 244a, and the first drain electrode 244b are located on the upper part of the first semiconductor layer 210, and the second gate electrode 240, the second source electrode 246a, and the second drain electrode 246b are located on the upper part of the second semiconductor layer 236. That is, each of the first thin-film transistor T1 and the second thin-film transistor T2 has a coplanar structure. Alternatively, in each of the first thin-film transistor T1 and the second thin-film transistor T2, the gate electrode can be located at the bottom of the semiconductor layer, and the source electrode and drain electrode can be located at the top of the semiconductor layer. That is, each of the first thin-film transistor T1 and the second thin-film transistor T2 can have an inverse staggered structure.

[0097] A planarization layer 250 is provided above the third interlayer insulating film 242, covering the first source electrode 244a, the first drain electrode 244b, the second source electrode 246a, and the second drain electrode 246b. The planarization layer 250 can be formed from an organic insulating material such as photoacrylic or benzocyclobutene (BCB).

[0098] The planarization layer 250 may include a first planarization layer 250a located on the first source electrode 244a, the first drain electrode 244b, the second source electrode 246a, and the second drain electrode 246b, and a second planarization layer 250b located on the first planarization layer 250a.

[0099] A connecting electrode 248 corresponding to the second source electrode 246a is provided on the first planarization layer 250a. The connecting electrode 248 can be connected to the second source electrode 246a through a contact hole formed in the first planarization layer 250a. For example, the connecting electrode 248 can be formed from a metallic material such as one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer structure or a multi-layer structure.

[0100] A second flattening layer 250b is provided on the first flattening layer 250a, covering the connecting electrode 248, and the first electrode 260a is provided on the second flattening layer 250b. The first electrode 260a corresponds to the connecting electrode 248 and is connected to the connecting electrode 248 through a contact hole formed in the second flattening layer 250b.

[0101] For example, the first electrode 260a is formed separately for each pixel region P. The first electrode 260a is the anode and may include a transparent conductive oxide layer and a reflective layer made of a conductive material with a relatively large work function, such as transparent conductive oxide (TCO).

[0102] The transparent conductive oxide layer can be formed from indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium copper oxide (ICO), and aluminum:zinc oxide (Al:ZnO, AZO). The reflective layer can be formed from silver (Ag), or an alloy of silver (Ag) with at least one of palladium (Pd), copper (Cu), indium (In), or neodymium (Nd), or an aluminum-palladium-copper (APC) alloy. For example, the first electrode 260a may have a two-layer structure of Ag / ITO or APC / ITO, or a three-layer structure of ITO / Ag / ITO or ITO / APC / ITO.

[0103] Furthermore, a bank 256 located at the boundary of the pixel region P is provided on the second planarization layer 250b. The bank 256 may have an opening that covers the end of the first electrode 260a while exposing the center of the first electrode 260a. The bank 256 may extend into a portion of the non-display region NDA and may contain light-absorbing particles (e.g., black particles) and be light-absorbing.

[0104] Although not shown in Figure 4, a spacer can be provided on bank 256.

[0105] Bank 256 and the spacer can be formed from the same material. For example, each of bank 256 and the spacer can be formed from an organic insulating material such as photoacrylic, benzocyclobutene, or polyimide.

[0106] A light-emitting layer 260b is provided while covering the first electrode 260a and the bank 256. The light-emitting layer 260b contacts the first electrode 260a at the opening of the bank 256. That is, the light-emitting layer 260b can be formed in contact with the upper surface of the first electrode 260a and the side and upper surfaces of the bank 256.

[0107] For example, the light-emitting layer 260b may comprise an organic light-emitting material layer containing a host and a dopant, or an inorganic light-emitting material layer containing an inorganic light-emitting material such as a quantum dot. Furthermore, the light-emitting layer 260b may have a multilayer structure further comprising at least one of the following: a hole injection layer, a hole transport layer, an electron barrier layer, another hole barrier layer, an electron transport layer, or an electron injection layer.

[0108] A second electrode 260c is provided on the light-emitting layer 260b. The second electrode 260c can be formed from one of the following: indium tin oxide (ITO), indium zinc oxide (IZO), aluminum (Al), silver (Ag), copper (Cu), lead (Pb), magnesium (Mg), molybdenum (Mo), titanium (Ti), or alloys thereof, and may be a single-layer or multi-layer structure. The second electrode 260c may be a thin transparent electrode or a semi-transparent electrode.

[0109] The first electrode 260a, the light-emitting layer 260b, and the second electrode 260c constitute a light-emitting diode D. The light-emitting diode D can emit red light, green light, and blue light from the red pixel region, the green pixel region, and the blue pixel region, respectively.

[0110] In the display panel 101, light from the organic light-emitting layer 260b passes through the second electrode 260c, and an image is displayed. In other words, the display panel 101 can be a top-emission type display panel.

[0111] A capsule sealing layer 262 is placed over the entire surface of the substrate 202 above the second electrode 260c to suppress moisture penetration. The capsule sealing layer 262 may have a multilayer structure including a first inorganic layer 262a, an organic layer 262b, and a second inorganic layer 262c, which are arranged sequentially.

[0112] For example, the first inorganic layer 262a and the second inorganic layer 262c are each made of silicon oxide (SiO2) or silicon nitride (SiN xThe organic layer 262b can be formed from an inorganic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0113] Referring again to Figures 3A and 3B, a first buffer layer 102 is provided on the display panel 101, and a transmissivity-variable touch panel 110 is placed on the first buffer layer 102.

[0114] The variable transmittance touch panel 110 includes a variable transmittance layer 120, a drive electrode 132, and a touch electrode layer 111.

[0115] The transmittance variable layer 120 is located in each of the first pixel region P1 to the third pixel region P3 and may include a spacer 124 and a light absorption layer 122.

[0116] The spacer 124 includes a first spacer 240a located in the first light-emitting region EA1, a second spacer 124b located in the second light-emitting region EA2, and a third spacer 124c located in the third light-emitting region EA3. Each of the first spacer 124a through the third spacer 124c is spaced apart from each other. The space between the first spacer 124a and the second spacer 124b corresponds to the first non-light-emitting region NEA1, and the space between the second spacer 124b and the third spacer 124c corresponds to the second non-light-emitting region NEA2.

[0117] Each of the first to third spacers 124a to 124c has a first width at its lower part and a second width smaller than the first width at its upper part. For example, each of the first to third spacers 124a to 124c may be triangular pyramidal in shape.

[0118] Each of the first spacers 124a to the third spacers 124c can be formed from an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0119] The light-absorbing layer 122 is located in the space between the first spacers 124a to the third spacers 124c, or on each of the sides of the first spacers 124a to the third spacers 124c. That is, the light-absorbing layer 122 is located in the first non-emitting region NEA1 and the second non-emitting region NEA2, or covers each of the sides of the first spacers 124a to the third spacers 124c.

[0120] The light-absorbing layer 122 contains charged black particles. The light-absorbing layer 122 is located in the light-emitting regions EA1, EA2, EA3, or the non-light-emitting regions NEA1, NEA2, when the variable transmittance touch panel 110 is driven, and the transmittance of the variable transmittance touch panel 110 and the light-emitting diode display device 100 is adjusted.

[0121] The light-absorbing layer 122 may include a first light-absorbing layer 122a located in a first non-emitting region NEA1, or on one side of the first spacer 124a and one side of the second spacer 124b, and a second light-absorbing layer 122b located in a second non-emitting region NEA2, or on one side of the second spacer 124b and one side of the third spacer 124c.

[0122] The touch electrode layer 111 is located on one side of the variable transmittance layer 120. For example, the touch electrode layer 111 can be located on the first buffer layer 102 and on the lower side of the variable transmittance layer 120.

[0123] The touch electrode layer 111 may include a first touch electrode 112 located in the first light-emitting region EA1 to the third light-emitting region EA3, and a second touch electrode 113 located in the first non-light-emitting region NEA1 and the second non-light-emitting region NEA2.

[0124] Each of the first touch electrode 112 and the second touch electrode 113 can be formed from a conductive material. For example, each of the first touch electrode 112 and the second touch electrode 113 can be formed from at least one transparent conductive material from among indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium copper oxide (ICO), and aluminum:zinc oxide (Al:ZnO, AZO).

[0125] In the first light-emitting region EA1, the center of the first touch electrode 112 is located within the first light-emitting region EA1, and both ends of the first touch electrode 112 extend into the first non-light-emitting region NEA1 and the third non-light-emitting region between the first light-emitting region EA1 and the third light-emitting region EA3. In the second light-emitting region EA2, the center of the first touch electrode 112 is located within the second light-emitting region EA2, and both ends of the first touch electrode 112 extend into the first non-light-emitting region NEA1 and the second non-light-emitting region NEA2. In the third light-emitting region EA3, the center of the first touch electrode 112 is located within the third light-emitting region EA3, and both ends of the first touch electrode 112 extend into the second non-light-emitting region NEA2 and the third non-light-emitting region. That is, the area of ​​the first touch electrode 112 located within each of the first to third light-emitting regions EA1 to EA3 may be larger than the area of ​​each of the first to third light-emitting regions EA1 to EA3.

[0126] The second touch electrode 113 is spaced apart from the first touch electrode 112 and is located in a part of the first non-emitting region NEA1, the second non-emitting region NEA2, and the third non-emitting region, respectively. That is, the area of ​​the second touch electrode 113 located in each of the first emitting region EA1 to the third emitting region EA3 may be smaller than the area of ​​each of the first emitting region EA1 to the third emitting region EA3.

[0127] The drive electrode 132 is located on the other side of the variable transmittance layer 120. For example, the drive electrode 132 can be located on the upper side of the variable transmittance layer 120.

[0128] The drive electrode 132 can be formed from a conductive material. For example, the drive electrode 132 can be formed from at least one transparent conductive material selected from indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium copper oxide (ICO), and aluminum:zinc oxide (Al:ZnO, AZO).

[0129] The driving electrode 132 is located in the first light-emitting region EA1 to the third light-emitting region EA3. That is, in the first light-emitting region EA1 to the third light-emitting region EA3, the driving electrode 132 is superimposed on the first touch electrode 112 with the spacer 124 and the light-absorbing layer 122 interposed between them.

[0130] In the first light-emitting region EA1 to the third light-emitting region EA3, the area of ​​the driving electrode 132 may be substantially the same as the area of ​​the first touch electrode 112.

[0131] The variable transmittance touch panel 110 may further include partitions 140 located in the first non-emitting region NEA1 and the second non-emitting region NEA2, respectively. The partitions 140 cover the second touch electrode 113 and may have a larger area than the second touch electrode 113.

[0132] The partition wall 140 can be formed from an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. The partition wall 140 is located on the same layer as the spacer 124 and can be formed from the same material.

[0133] The transmissivity-variable touch panel 110 may further include a bridge electrode 134 located on the partition wall 140. The bridge electrode 134 can be connected to a second touch electrode 113 via a contact hole 142 formed in the partition wall 140.

[0134] The bridge electrode 134 can be formed from a conductive material. For example, the bridge electrode 134 can be formed from at least one of the following: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium copper oxide (ICO), and aluminum:zinc oxide (Al:ZnO, AZO). In one embodiment of the present invention, the bridge electrode 134 can be formed from a transparent conductive material.

[0135] Referring to Figures 3A and 4, in the first drive mode when the light-emitting diode D is ON, no voltage difference is generated between the drive electrode 132 and the first touch electrode 112, and the light-absorbing layer 122 can be located in the space between the first spacer 124a to the third spacer 124c, i.e., the first non-emitting region NEA1 and the second non-emitting region NEA2.

[0136] In other words, the first light absorption layer 122a may be located on the end of the first touch electrode 112 in the first non-emitting region NEA1, and the second light absorption layer 122b may be located on the end of the first touch electrode 112 in the second non-emitting region NEA2.

[0137] As a result, in the first drive mode, the transmissibility variable touch panel 110 or the light-emitting diode display device 100 has relatively high transmissivity in each of the first light-emitting region EA1 to the third light-emitting region EA3. Consequently, the brightness of the light from the light-emitting diode D of the display panel 101 is not reduced, and the display is shown in the first light-emitting region EA1 to the third light-emitting region EA3.

[0138] Referring to Figures 3B and 4, in the second driving mode when the light-emitting diode D is in the off state, a voltage difference is generated between the driving electrode 132 and the first touch electrode 112, and the light-absorbing layer 122 covers the sides of the first spacer 124a to the third spacer 124c. That is, in the second driving mode, the light-absorbing layer 122 can be located in the first light-emitting region EA1 to the third light-emitting region EA3.

[0139] In other words, the first light-absorbing layer 122a covers one side of the first spacer 124a and one side of the second spacer 124b, and the second light-absorbing layer 122b covers one side of the second spacer 124b and one side of the third spacer 124c.

[0140] As a result, in the second drive mode, the transmissibility-variable touch panel 110 or the light-emitting diode display device 100 has relatively low transmissivity in each of the first light-emitting region EA1 to the third light-emitting region EA3. Consequently, the reflection of ambient light in the light-emitting diode display device 100 can be minimized.

[0141] In other words, in the first driving mode, the light absorption layer 122 is located within the first non-emitting region NEA1 and the second non-emitting region NEA2, and the transmittance variable layer 120 has a first transmittance in each of the first emitting region EA1 to the third emitting region EA3. In the second driving mode, the light absorption layer 178 covers the sides of the first spacer 124a to the third spacer 124c, and the transmittance variable layer 120 can have a second transmittance lower than the first transmittance in each of the first emitting region EA1 to the third emitting region EA3.

[0142] In a second driving mode according to one embodiment of the present invention, the light-absorbing layer 122 can cover the sides of the first spacer 124a to the third spacer 124c and fill the space between the first spacer 124a to the third spacer 124c.

[0143] The thickness of the spacer 124 may be less than or equal to the distance between the first touch electrode 112 and the drive electrode 132. In one embodiment of the present invention, the thickness of the spacer 124 may be less than the distance between the first touch electrode 112 and the drive electrode 132. When the thickness of the spacer 124 is less than the distance between the first touch electrode 112 and the drive electrode 132, the light absorption layer 122 can cover the upper end of the spacer 124 in the second drive mode, thereby minimizing the transmittance of the variable transmittance touch panel 110 in the second drive mode.

[0144] Furthermore, the partition wall 140 may have the same thickness as the distance between the first touch electrode 112 and the drive electrode 132. That is, the thickness of the partition wall 140 may be greater than or equal to the thickness of the spacer 124. In one embodiment of the present invention, the thickness of the partition wall 140 may be greater than the thickness of the spacer 124.

[0145] The second buffer layer 103 is provided on the drive electrode 132 and the bridge electrode 134, and the color filter panel 150 is provided on the second buffer layer 103.

[0146] The color filter pattern 150 may include a black matrix 151 corresponding to non-emitting regions NEA1 and NEA2, and a color filter layer 154 corresponding to emitting regions EA1, EA2, and EA3.

[0147] The black matrix 151 may include a first black matrix 152 corresponding to a first non-emitting region NEA1 and a second black matrix 153 corresponding to a second non-emitting region NEA2. Each of the first black matrix 152 and the second black matrix 153 corresponds to the boundary of the pixel region P.

[0148] The width of the black matrix 151 may be smaller than the width of the bank 156. That is, the bank 156 has a first aperture corresponding to the light-emitting regions EA1 and EA2, and the black matrix 151 has a second aperture corresponding to the non-light-emitting regions NEA1 and NEA2, and the area (width) of the first aperture may be smaller than the area of ​​the second aperture.

[0149] Furthermore, the distance between the spacers 124 may be less than or equal to the width of the black matrix 151. Therefore, in the first driving mode, the light-absorbing layer 122 located on the lower side of the spacer 124 is obscured by the black matrix 151, preventing the light-absorbing layer 122 from being visible, and improving the display quality of the light-emitting diode display device 100.

[0150] The widths of the first touch electrode 112 and the drive electrode 132 may be greater than or equal to the width of the black matrix 151. In one embodiment of the present invention, the widths of the first touch electrode 112 and the drive electrode 132 may be greater than the width of the black matrix 151. Therefore, in the first drive mode, the light-absorbing layer 122 located at the end of the first touch electrode 112 is obscured by the black matrix 151, preventing the light-absorbing layer 122 from being visible, and improving the display quality of the light-emitting diode display device 100.

[0151] The color filter layer 154 is located between the black matrices 151. The color filter layer 154 may include a first color filter pattern 155 corresponding to the first light-emitting region EA1, a second color filter pattern 156 corresponding to the second light-emitting region EA2, and a third color filter pattern 157 corresponding to the third light-emitting region EA3.

[0152] The first color filter pattern 155 is a red color filter pattern and may contain a red dye or red pigment. The second color filter pattern 156 is a green color filter pattern and may contain a green dye or green pigment. The third color filter pattern 157 is a blue color filter pattern and may contain a blue dye or blue pigment.

[0153] The color filter pattern 150 may further include a protective layer 158 covering the black matrix 151 and the color filter layer 154. The protective layer 158 may be made of silicon oxide (SiO2) or silicon nitride (SiN x They may be formed from inorganic insulating materials such as ) or from organic insulating materials such as photoacrylic or benzocyclobutene (BCB).

[0154] The first embodiment of the present invention includes a light-emitting diode display device 100 located above the display panel 101, which includes a variable transmittance touch panel 110 whose transmittance can be adjusted, thereby minimizing the reflection of ambient light without reducing brightness.

[0155] In other words, the light-absorbing layer 122 of the variable transmittance touch panel 110 covers the sides of the spacer 124, which is located in the non-emitting regions NEA1 and NEA2 in the first drive mode and in the emitting regions EA1 and EA2 in the second drive mode. As a result, the reflection of ambient light in the first emitting region EA1 to the third emitting region EA3 can be reduced in the second drive mode without a decrease in the brightness of the first emitting region EA1 to the third emitting region EA3 in the first drive mode.

[0156] Furthermore, since the first touch electrode 112 is used to drive the light absorption layer 122, the addition of separate configurations to reduce the reflection of ambient light can be minimized.

[0157] Furthermore, if the thickness of the spacer 124 is less than the distance between the drive electrode 132 and the first touch electrode 112, the light absorption layer 122 can cover the upper end of the spacer 124, thereby further reducing the reflection of ambient light.

[0158] Furthermore, since the black matrix 151 has a width greater than the first touch electrode 112, in the first driving mode, the light absorption layer 122 at the end of the first touch electrode 112 may be blocked by the black matrix 151.

[0159] Figure 5 is a schematic cross-sectional view showing a light-emitting diode display device according to a second embodiment of the present invention.

[0160] As shown in Figure 5, the light-emitting diode display device 300 according to the second embodiment of the present invention includes a display panel 101 and a transmissivity-variable touch panel 310 located above the display panel 101.

[0161] The display panel 101 may be an organic light-emitting diode display panel or an inorganic light-emitting diode display panel.

[0162] Furthermore, the light-emitting diode display device 300 may further include a color filter panel 150 located above the variable transmittance touch panel 310. That is, the variable transmittance touch panel 310 is located between the display panel 101 and the color filter panel 150.

[0163] Furthermore, the light-emitting diode display device 300 may further include at least one of a first buffer layer 102 located between the display panel 101 and the variable transmittance panel 310, and a second buffer layer 103 located between the variable transmittance panel 310 and the color filter panel 150.

[0164] The light-emitting diode display device 300 according to the second embodiment of the present invention differs from the light-emitting diode display device 100 according to the first embodiment of the present invention in terms of the spacer 324 of the variable transmittance touch panel 310. Therefore, the explanation will focus on the spacer 324 of the variable transmittance touch panel 310.

[0165] The variable transmittance touch panel 310 includes a variable transmittance layer 320, a drive electrode 132, and a touch electrode layer 111. The variable transmittance layer 320 is located in each of the first pixel region P1 to the third pixel region P3 and may include a spacer 324 and a light absorption layer 122.

[0166] The touch electrode layer 111 and the drive electrode 132 are located on one side and the other side of the transmittance variable layer 320, respectively. The first touch electrode 112 and the drive electrode 132 are located in the first light-emitting region EA1 to the third light-emitting region EA3, and the second touch electrode 113 is located in the first non-light-emitting region NEA1 and the second non-light-emitting region NEA2.

[0167] Furthermore, the variable transmittance touch panel 310 may further include a partition wall 140 located in a first non-emitting region NEA1 and a second non-emitting region NEA2, and a bridge electrode 134 located on the partition wall 140.

[0168] The spacer 324 includes a first spacer 324a located in the first light-emitting region EA1, a second spacer 324b located in the second light-emitting region EA2, and a third spacer 324c located in the third light-emitting region EA3.

[0169] Each of the first to third spacers 324a to 324c has a first width at its lower part and a second width smaller than the first width at its upper part. For example, each of the first to third spacers 324a to 324c may be dome-shaped (or lens-shaped). As a result, light from the display panel 101 is concentrated, improving the light efficiency in the first to third light-emitting regions EA1 to EA3.

[0170] A second embodiment of the present invention includes a light-emitting diode display device 300 located above the display panel 101, which includes a variable transmittance touch panel 310 whose transmittance can be adjusted, thereby minimizing the reflection of ambient light without reducing brightness.

[0171] In other words, the light-absorbing layer 122 of the variable transmittance touch panel 310 covers the sides of the spacer 324, which is located in the non-emitting regions NEA1 and NEA2 in the first drive mode and in the emitting regions EA1 and EA2 in the second drive mode. As a result, the reflection of ambient light in the first emitting region EA1 to the third emitting region EA3 can be reduced in the second drive mode without a decrease in the brightness of the first emitting region EA1 to the third emitting region EA3 in the first drive mode.

[0172] Furthermore, since the first touch electrode 112 is used to drive the light absorption layer 122, the addition of separate configurations to reduce the reflection of ambient light can be minimized.

[0173] Furthermore, if the thickness of the spacer 324 is less than the distance between the drive electrode 132 and the first touch electrode 112, the light absorption layer 122 can cover the upper end of the spacer 324, thereby further reducing the reflection of ambient light.

[0174] Furthermore, because the spacer 324 is dome-shaped, it concentrates the light from the display panel 101, resulting in an improved light efficiency in the first light-emitting region EA1 to the third light-emitting region EA3.

[0175] Furthermore, because the black matrix 151 has a width greater than the first touch electrode 112, in the first driving mode, the light-absorbing layer 122 located at the edge of the first touch electrode 112 is blocked by the black matrix 151, preventing the light-absorbing layer 122 from being visible, and thus improving the display quality of the light-emitting diode display device 300.

[0176] Figure 6 is a schematic cross-sectional view showing a light-emitting diode display device according to a third embodiment of the present invention.

[0177] As shown in Figure 6, the light-emitting diode display device 400 according to the third embodiment of the present invention includes a display panel 101 and a transmissivity-variable touch panel 410 located above the display panel 101.

[0178] The display panel 101 may be an organic light-emitting diode display panel or an inorganic light-emitting diode display panel.

[0179] Furthermore, the light-emitting diode display device 400 may further include a color filter panel 150 located above the variable transmittance touch panel 410. That is, the variable transmittance touch panel 410 is located between the display panel 101 and the color filter panel 150.

[0180] Furthermore, the light-emitting diode display device 400 may further include at least one of a first buffer layer 102 located between the display panel 101 and the variable transmittance touch panel 410, and a second buffer layer 103 located between the variable transmittance touch panel 410 and the color filter panel 150.

[0181] Compared to the light-emitting diode display device 100 according to the first embodiment of the present invention, the light-emitting diode display device 400 according to the third embodiment of the present invention differs in the transmittance variable layer 420 of the transmittance variable touch panel 410. Therefore, the explanation will focus on the transmittance variable layer 420 of the transmittance variable touch panel 410.

[0182] The variable transmittance touch panel 410 includes a variable transmittance layer 420, a drive electrode 132, and a touch electrode layer 111. The variable transmittance layer 420 is located in each of the first pixel region P1 to the third pixel region P3 and may include a spacer 424 and an electro-color-changing material layer 422.

[0183] The touch electrode layer 111 and the drive electrode 132 are located on one side and the other side of the transmittance variable layer 420, respectively. The first touch electrode 112 and the drive electrode 132 are located in the first light-emitting region EA1 to the third light-emitting region EA3, and the second touch electrode 113 is located in the first non-light-emitting region NEA1 and the second non-light-emitting region NEA2.

[0184] Furthermore, the variable transmittance touch panel 410 may further include a partition wall 140 located in a first non-emitting region NEA1 and a second non-emitting region NEA2, and a bridge electrode 134 located on the partition wall 140.

[0185] The electrochromic material layer 422 may include a first electrochromic material layer 422a located in the first light-emitting region EA1, a second electrochromic material layer 422b located in the second light-emitting region EA2, and a third electrochromic material layer 422c located in the third light-emitting region EA3. For example, the width of each of the first electrochromic material layer 422a to the third electrochromic material layer 422c may be the same as the width of the first touch electrode 112 and the drive electrode 132, respectively.

[0186] In each of the first to third light-emitting regions EA1 to EA3, each of the first to third electro-color-changing material layers 422a to 422c fills the space excluding the spacer 424.

[0187] Each of the first to third electrochromic material layers 422a to 422c contains electrochromic particles 421. Electrochromic particles 421 are substances whose color changes when a voltage is applied.

[0188] The electro-color-changing particles 421 may contain at least one of the following: metal oxides such as tungsten, iridium, nickel, and vanadium; organic substances such as viologen and quinone; and conductive polymers such as polythiophene, polyaniline, and polypyrrole. In one embodiment of the present invention, the electro-color-changing particles 421 may have a core-shell structure comprising a core containing at least one of indium tin oxide or titanium oxide, and a shell surrounding the core containing at least one of viologen and quinone.

[0189] In the first drive mode, when the light-emitting diode is ON, no voltage difference is generated between the drive electrode 132 and the first touch electrode 112, and the electro-color-changing particles 421 of the electro-color-changing material layer 422 are transparent.

[0190] As a result, in the first drive mode, the transmissibility variable touch panel 410 or the light-emitting diode display device 400 has relatively high transmissivity in each of the first light-emitting region EA1 to the third light-emitting region EA3. Therefore, the brightness of the light from the light-emitting diode D of the display panel 101 is not reduced, and the display is shown in the first light-emitting region EA1 to the third light-emitting region EA3.

[0191] In the second drive mode, when the light-emitting diode D is in the off state, a voltage difference is generated between the drive electrode 132 and the first touch electrode 112, and light is absorbed by the electro-color-changing particles 421 of the electro-color-changing material layer 422.

[0192] As a result, in the second drive mode, the transmissibility-variable touch panel 110 or the light-emitting diode display device 400 has relatively low transmissivity in each of the first light-emitting region EA1 to the third light-emitting region EA3. Therefore, the reflection of ambient light in the light-emitting diode display device 400 can be minimized.

[0193] In the light-emitting diode display device 400, the width of the electrochromic material layer 422 may be the same as the width of the black matrix 151. Since the electrochromic material layer 422 is transparent in the first driving mode, the black matrix 151 does not need to obstruct the electrochromic material layer 422. Therefore, an increase in the width of the electrochromic material layer 422 and a decrease in the area of ​​the first light-emitting region EA1 to the third light-emitting region EA3 are prevented, and a high-brightness and high-efficiency light-emitting diode display device 400 can be provided.

[0194] In Figure 6, the spacer 424 is triangular pyramidal, but the spacer 424 may also be dome-shaped.

[0195] A third embodiment of the present invention includes a light-emitting diode display device 400 located above the display panel 101, which includes a variable transmittance touch panel 410 whose transmittance can be adjusted, thereby minimizing the reflection of ambient light without reducing brightness.

[0196] In other words, the electrocolor-changing material layer 422 of the variable transmittance touch panel 410 is located in each of the first to third light-emitting regions EA1 to EA3, has a first transmittance in the first drive mode, changes color in the second drive mode, and has a transmittance lower than the first transmittance. As a result, the brightness of the first to third light-emitting regions EA1 to EA3 does not decrease in the first drive mode, and the reflection of ambient light in the first to third light-emitting regions EA1 to EA3 can be reduced in the second drive mode.

[0197] Furthermore, since the first touch electrode 112 is used to drive the electrocolor-changing material layer 422, the addition of separate configurations to reduce the reflection of ambient light can be minimized.

[0198] Furthermore, if the thickness of the spacer 424 is less than the distance between the drive electrode 132 and the first touch electrode 112, the electro-color-changing material layer 422 can cover the upper end of the spacer 424, thereby further reducing the reflection of ambient light.

[0199] Furthermore, since the black matrix 151 does not need to block a portion of the electrocolor-changing material layer 422, a reduction in the area of ​​the first light-emitting region EA1 to the third light-emitting region EA3 is prevented, making it possible to provide a light-emitting diode display device 400 that is highly bright and highly efficient.

[0200] Furthermore, if the spacer 424 is dome-shaped, the light from the display panel 101 is concentrated, resulting in an improved light efficiency in the first light-emitting region EA1 to the third light-emitting region EA3.

[0201] Figure 7 is a schematic cross-sectional view showing a light-emitting diode display device according to a fourth embodiment of the present invention.

[0202] As shown in Figure 7, the light-emitting diode display device 500 according to the fourth embodiment of the present invention includes a display panel 101 and a transmissivity-variable touch panel 510 located above the display panel 101.

[0203] The display panel 101 may be an organic light-emitting diode display panel or an inorganic light-emitting diode display panel.

[0204] Furthermore, the light-emitting diode display device 500 may further include a color filter panel 150 located above the variable transmittance touch panel 510. That is, the variable transmittance touch panel 510 is located between the display panel 101 and the color filter panel 150.

[0205] Furthermore, the light-emitting diode display device 500 may further include at least one of a first buffer layer 102 located between the display panel 101 and the variable transmittance touch panel 510, and a second buffer layer 103 located between the variable transmittance touch panel 510 and the color filter panel 150.

[0206] Compared to the light-emitting diode display device 400 according to the third embodiment of the present invention, the light-emitting diode display device 500 according to the fourth embodiment of the present invention differs in the transmittance variable layer 520 of the transmittance variable touch panel 510. Therefore, the explanation will focus on the transmittance variable layer 520 of the transmittance variable touch panel 510.

[0207] The variable transmittance touch panel 510 includes a variable transmittance layer 520, a drive electrode 132, and a touch electrode layer 111. The variable transmittance layer 520 is located in each of the first pixel region P1 to the third pixel region P3 and may include an electro-color change material layer 522.

[0208] The electrochromic material layer 522 may include a first electrochromic material layer 522a located in the first light-emitting region EA1, a second electrochromic material layer 522b located in the second light-emitting region EA2, and a third electrochromic material layer 522c located in the third light-emitting region EA3. For example, the width of each of the first electrochromic material layer 522a to the second electrochromic material layer 522c may be the same as the width of the first touch electrode 112 and the drive electrode 132, respectively.

[0209] In the light-emitting diode display device 400 according to the third embodiment of the present invention, the transmittance variable layer 420 includes a spacer 424 and an electrocolor-changing material layer 422, while in the light-emitting diode display device 500 according to the fourth embodiment of the present invention, the transmittance variable layer 520 does not include a spacer but includes an electrocolor-changing material layer 522.

[0210] In other words, the electrocolor-changing material layer 522 completely fills each of the first light-emitting regions EA1 to the third light-emitting regions EA3, and in each of the first light-emitting regions EA1 to the third light-emitting regions EA3, it contacts the entire upper surface of the first touch electrode 112 and the entire lower surface of the drive electrode 132.

[0211] In the light-emitting diode display device 400 according to the third embodiment of the present invention, the electrocolor-changing material layer 422 has a first thickness below the spacer 424 and a thickness greater than the first thickness above the spacer 424. As a result, the electrocolor-changing material layer 422 has variations in thickness at the center and edges of each of the first light-emitting region EA1 to the third light-emitting region EA3, and in the second drive mode, variations in transmittance may occur at the center and edges of each of the first light-emitting region EA1 to the third light-emitting region EA3.

[0212] However, in the light-emitting diode display device 500 according to the fourth embodiment of the present invention, the electrocolor-changing material layer 522 has the same thickness in the central and edge portions of each of the first light-emitting region EA1 to the third light-emitting region EA3. Therefore, in the second drive mode, variations in transmittance can be prevented in the central and edge portions of each of the first light-emitting region EA1 to the third light-emitting region EA3. Accordingly, the light-emitting diode display device 500 exhibits uniform anti-external light reflection characteristics and can efficiently prevent defects such as rainbow unevenness caused by external light reflection.

[0213] A fourth embodiment of the present invention, a light-emitting diode display device 500, includes a variable transmittance touch panel 510 located above the display panel 101, which allows for adjustment of transmittance, thereby minimizing the reflection of ambient light without reducing brightness.

[0214] In other words, the electrocolor-changing material layer 522 of the variable transmittance touch panel 510 is located in each of the first to third light-emitting regions EA1 to EA3, has a first transmittance in the first drive mode, changes color in the second drive mode, and has a transmittance lower than the first transmittance. As a result, the brightness of the first to third light-emitting regions EA1 to EA3 does not decrease in the first drive mode, and the reflection of ambient light in the first to third light-emitting regions EA1 to EA3 can be reduced in the second drive mode.

[0215] Furthermore, since the electro-color-changing material layer 522 has the same thickness in the central and edge portions of the first light-emitting region EA1 to the third light-emitting region EA3, the light-emitting diode display device 500 exhibits uniform anti-external light reflection characteristics, and defects such as rainbow unevenness caused by external light reflection can be efficiently prevented.

[0216] Furthermore, since the first touch electrode 112 is used to drive the electrocolor-changing material layer 522, the addition of separate configurations to reduce the reflection of ambient light can be minimized.

[0217] Furthermore, if the thickness of the spacer 424 is less than the distance between the drive electrode 132 and the first touch electrode 112, the electro-color-changing material layer 522 can cover the upper end of the spacer 124, thereby further reducing the reflection of ambient light.

[0218] Furthermore, since the black matrix 151 does not need to block a portion of the electrocolor-changing material layer 522, a reduction in the area of ​​the first light-emitting region EA1 to the third light-emitting region EA3 is prevented, making it possible to provide a light-emitting diode display device 500 that is highly bright and highly efficient.

[0219] Furthermore, if the spacer 124 is dome-shaped, the light from the display panel 101 is concentrated, resulting in an improved light efficiency in the first light-emitting region EA1 to the third light-emitting region EA3.

[0220] The present invention has been described above based on exemplary embodiments and examples, but the present invention is not limited to the technical ideas described in these embodiments and examples. Rather, anyone with ordinary skill in the art to which the present invention belongs can easily deduce various modifications and variations based on the embodiments and examples described above. However, it will be clear from the claims that such modifications and variations fall within the scope of the rights of the present invention. [Explanation of Symbols]

[0221] 100, 200, 300, 400, 500…Light-emitting diode display device, 101…Display panel, 156…Bank, 160a…First electrode, 160b…Light-emitting layer, 160c…Second electrode, 162…Capsule sealing layer, 102, 103…Buffer layer, 110, 310, 410, 510…Variable transmittance touch panel, 111…Touch electrode layer, 112, 113…Touch electrode, 120, 320, 420, 520…Variable transmittance layer, 122, 122a, 122b, 122c…Light-absorbing layer, 124, 124a, 124b, 124c, 324…Spacer, 132…Driver Electrode, 134…Bridge electrode, 140…Partition, 150…Color filter panel, 151, 152, 153…Black matrix, 194…Color filter layer, 155, 156, 157…Color filter pattern, 202…Substrate, 422, 422a, 422b, 422c, 522, 522a, 522b, 522c…Electro-color-changing material layer, 421, 521…Electro-color-changing particles, D…Organic light-emitting diode, T1, T2…Thin-film transistor, P, P1, P2, P3…Pixel area, EA1, EA2, EA3…Light-emitting area, NEA1, NEA2…Non-light-emitting area

Claims

1. A display panel including a first pixel region, a second pixel region, and a third pixel region, and light-emitting diodes provided in each of the first light-emitting region of the first pixel region, the second light-emitting region of the second pixel region, and the third light-emitting region of the third pixel region, A variable transmittance layer located on the display panel and situated in each of the first light-emitting region, the second light-emitting region, and the third light-emitting region, A touch electrode layer located on one side of the variable transmittance layer, including a first touch electrode provided in each of the first light-emitting region, the second light-emitting region, and the third light-emitting region, and a second touch electrode provided in each of the first non-light-emitting region between the first light-emitting region and the second non-light-emitting region between the second light-emitting region and the third light-emitting region, A light-emitting diode display device comprising a drive electrode located on the other side of the variable transmittance layer and corresponding to the first touch electrode.

2. The light-emitting diode display device according to claim 1, further comprising spacers located within the transmittance variable layer and corresponding to each of the first light-emitting region, the second light-emitting region, and the third light-emitting region.

3. The light-emitting diode display device according to claim 2, characterized in that the thickness of the spacer is less than the distance between the drive electrode and the first touch electrode.

4. The light-emitting diode display device according to claim 2, characterized in that the spacer is dome-shaped.

5. The light-emitting diode display device according to claim 2, characterized in that the transmittance variable layer is a light-absorbing layer containing charged black particles.

6. The light-emitting diode display device according to claim 5, further comprising a partition wall located in the first non-light-emitting region and the second non-light-emitting region, which separates the transmittance variable layer.

7. A first black matrix and a second black matrix are located on the transmittance variable layer and are located in the first non-emitting region and the second non-emitting region, respectively. The light-emitting diode display device according to claim 6, further comprising a first color filter layer, a second color filter layer, and a third color filter layer located on the transmittance variable layer, and corresponding to the first light-emitting region, the second light-emitting region, and the third light-emitting region, respectively.

8. The light-emitting diode display device according to claim 7, characterized in that the width of each of the first black matrix and the second black matrix is ​​greater than the width of the partition wall.

9. The light-emitting diode display device according to claim 1 or 2, characterized in that the transmittance variable layer contains electrocolor-changing particles.

10. The light-emitting diode display device according to claim 1, further comprising a partition wall located in the first non-light-emitting region and the second non-light-emitting region, which separates the transmittance variable layer.

11. The light-emitting diode display device according to claim 10, characterized in that the touch electrode layer is located between the display panel and the transmittance variable layer.

12. The light-emitting diode display device according to claim 11, further comprising a bridge electrode located on the partition wall, which is connected to the second touch electrode via a contact hole provided in the partition wall.

13. The light-emitting diode display device according to claim 10, characterized in that the drive electrode is located between the display panel and the transmittance variable layer.

14. The present invention further includes a bridge electrode located on the partition wall, The light-emitting diode display device according to claim 13, characterized in that the second touch electrode is connected to the bridge electrode via a contact hole provided in the partition wall.

15. In the first driving mode, the transmittance variable layer has a first transmittance in each of the first light-emitting region, the second light-emitting region, and the third light-emitting region. In the second driving mode, the light-emitting diode display device according to claim 1, characterized in that the transmittance variable layer has a second transmittance lower than the first transmittance in each of the first light-emitting region, the second light-emitting region, and the third light-emitting region.

16. In the first driving mode, the light-emitting diode is in the ON state, The light-emitting diode display device according to claim 15, wherein in the second driving mode, the light-emitting diode is in the off state.

17. A first black matrix and a second black matrix are located on the transmittance variable layer and are located in the first non-emitting region and the second non-emitting region, respectively. The light-emitting diode display device according to claim 1, further comprising a first color filter layer, a second color filter layer, and a third color filter layer located on the transmittance variable layer, and corresponding to the first light-emitting region, the second light-emitting region, and the third light-emitting region, respectively.

18. The light-emitting diode display device according to claim 17, characterized in that the display panel further includes a first bank located in the first non-light-emitting region and a second bank located in the second non-light-emitting region.

19. The width of the first bank is greater than the width of the first black matrix. The light-emitting diode display device according to claim 18, characterized in that the width of the second bank is greater than the width of the second black matrix.

20. The light-emitting diode display device according to claim 19, characterized in that the width of the first black matrix is ​​greater than the width of the second touch electrode.

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