System for fastening a semiconductor wafer to an electrostatic chuck and method for fastening a semiconductor wafer to an electrostatic chuck using the same

Abstract

According to an embodiment of the present invention, a system for fixing a semiconductor wafer to an electrostatic chuck includes an electrostatic chuck, a base layer, a conductive layer formed on the base layer, and an adhesive layer formed on the conductive layer, and further includes a semiconductor adhesive film fixed to the electrostatic chuck so that the base layer faces the electrostatic chuck, and a semiconductor wafer adhered to the adhesive layer. In the system for fixing a semiconductor wafer to an electrostatic chuck and the method for fixing a semiconductor wafer to an electrostatic chuck according to the present invention, the semiconductor adhesive film adheres to the semiconductor wafer, so that the semiconductor wafer can be stably fixed to and separated from the electrostatic chuck.

Description

[Technical Field]

[0001] The present invention relates to a system for fixing a semiconductor wafer to an electrostatic chuck and a method for fixing a semiconductor wafer to an electrostatic chuck using the same, and more particularly to a system for fixing a semiconductor wafer to an electrostatic chuck (Electrostatic Chuck) that can stably fix a semiconductor wafer to the electrostatic chuck and stably separate the semiconductor wafer from the electrostatic chuck, and a method for fixing a semiconductor wafer to an electrostatic chuck using the same. [Background technology]

[0002] In recent years, there has been an increasing demand for thinner and smaller semiconductor devices and their packages. Accordingly, as semiconductor wafers become thinner, electrostatic chucks (ESCs) are being used to effectively hold semiconductor wafers. An electrostatic chuck is a device used to hold a wafer during a semiconductor manufacturing process. It uses electrical force to hold a wafer. Unlike existing methods such as physical clamps and vacuum suction, it minimizes contact damage and provides a uniform holding force.

[0003] To secure a semiconductor wafer in an electrostatic chuck, a semiconductor adhesive film must be attached to the wafer. The semiconductor adhesive film must have appropriate electrical properties so that the wafer can be secured to the electrostatic chuck through electrical force, while minimizing the generation of residues and bubbles that may occur when adhering to the semiconductor wafer. Furthermore, the film must be designed so that the semiconductor wafer can be stably secured to the electrostatic chuck when a voltage is applied to the electrostatic chuck, and so that the semiconductor wafer can be released from the electrostatic chuck when no voltage is applied to the electrostatic chuck. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Korean Patent 10-2208071B1 Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a system for fixing a semiconductor wafer to an electrostatic chuck, which can stably fix or release a semiconductor wafer to or from an electrostatic chuck, and a method for fixing a semiconductor wafer to an electrostatic chuck using the same.

[0006] Another object of the present invention is to provide a system for fixing a semiconductor wafer to an electrostatic chuck, which minimizes the generation of residues and bubbles that may occur when a semiconductor adhesive film is adhered to a semiconductor wafer in the system for fixing a semiconductor wafer to an electrostatic chuck, and a method for fixing a semiconductor wafer to an electrostatic chuck using the same. [Means for solving the problem]

[0007] According to one embodiment of the present invention, a system for fixing a semiconductor wafer to an electrostatic chuck includes an electrostatic chuck, a base layer, a conductive layer formed on the base layer, and an adhesive layer formed on the conductive layer, and further includes a semiconductor adhesive film fixed to the electrostatic chuck so that the base layer faces the electrostatic chuck, and a semiconductor wafer adhered to the adhesive layer.

[0008] In the system for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the adhesive layer of the semiconductor adhesive film may adhere to a coating layer formed on the semiconductor wafer.

[0009] In a system for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the semiconductor wafer can be fixed to the electrostatic chuck when a voltage is applied to the electrostatic chuck, and the semiconductor wafer can be separated from the electrostatic chuck when no voltage is applied to the electrostatic chuck.

[0010] In a system for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the semiconductor adhesive film includes a release film layer formed on the adhesive layer, and the semiconductor wafer can be adhered to the adhesive layer after the release film layer is peeled off from the adhesive layer.

[0011] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, before the release film layer is removed, in a state in which the semiconductor adhesive film is fixed to the electrostatic chuck, when a voltage is applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in the horizontal direction is formed to be 200 gf / 150 mm or more, and when no voltage is applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in the horizontal direction can be formed to be 1 gf / 150 mm or less.

[0012] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the force required to peel the release film layer from the adhesive layer in the semiconductor adhesive film can be formed to be 0.8 to 1.1 gf / 25 mm.

[0013] In the system for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the adhesive force formed between the coating layer and the adhesive layer may be 0.8 to 2.5 gf / 25 mm.

[0014] In the system for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the adhesive force formed between the coating layer and the adhesive layer may be maintained even at temperatures between 10°C and 110°C.

[0015] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the Young's modulus value of the semiconductor adhesive film when the release film layer is removed can be formed to be 3500 to 4300 N / mm2. In the system for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the adhesive layer may include a silicon-based compound.

[0016] In the system for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the coating layer may be formed of an organic coating agent.

[0017] A method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention is a method for fixing a semiconductor wafer to an electrostatic chuck using a semiconductor adhesive film having a base layer, a conductive layer, an adhesive layer, and a release film layer laminated in this order, and may include a semiconductor adhesive film fixing step of fixing the semiconductor adhesive film to the electrostatic chuck so that the base layer faces the electrostatic chuck after a voltage is applied to the electrostatic chuck, a release film layer peeling step of peeling the release film layer from the adhesive layer of the semiconductor adhesive film, and a semiconductor wafer adhering step of adhering the semiconductor wafer to the adhesive layer.

[0018] According to an embodiment of the present invention, a method for fixing a semiconductor wafer to an electrostatic chuck may include an electrostatic chuck separation step of separating the semiconductor wafer and the semiconductor adhesive film from the electrostatic chuck after the applied voltage to the electrostatic chuck is removed, and a semiconductor wafer peeling step of separating the semiconductor wafer from the adhesive layer.

[0019] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, in the semiconductor wafer adhering step, a coating layer formed on the semiconductor wafer and the adhesive layer may be adhered to each other.

[0020] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the step of peeling the semiconductor wafer may include separating the coating layer and the adhesive layer from each other.

[0021] In the method for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, in the one step, when a voltage is applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in a horizontal direction can be formed to be 200 gf / 150 mm or more.

[0022] In the method for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, when no voltage is applied to the electrostatic chuck in the electrostatic chuck separation step, the force with which the electrostatic chuck fixes the semiconductor adhesive film in a horizontal direction can be formed to be 1 gf / 150 mm or less.

[0023] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, in the release film layer peeling step, the magnitude of the force for peeling the release film layer from the adhesive layer of the semiconductor adhesive film may be formed to be 0.8 to 1.1 gf / 25 mm.

[0024] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, in the semiconductor wafer peeling step, an adhesive force formed between the coating layer and the adhesive layer may be 0.8 to 2.5 gf / 25 mm.

[0025] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the adhesive force formed between the coating layer and the adhesive layer in the semiconductor wafer peeling step may be maintained even at a temperature of 10°C to 110°C.

[0026] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the Young's modulus of the adhesive film for semiconductors after the release film layer peeling step may be formed to be 3500 to 4300 N / mm2.

[0027] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the adhesive layer may include a silicon-based compound.

[0028] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the coating layer may be formed of an organic coating agent. [Effects of the Invention]

[0029] The system for fixing a semiconductor wafer to an electrostatic chuck and the method for fixing a semiconductor wafer to an electrostatic chuck according to the present invention allow the semiconductor wafer to be stably fixed to and separated from the electrostatic chuck by adhering a semiconductor adhesive film to the semiconductor wafer.

[0030] In addition, the system for fixing a semiconductor wafer to an electrostatic chuck and the method for fixing a semiconductor wafer to an electrostatic chuck according to the present invention make it possible to establish specific conditions such as force, adhesive force, Young's modulus, etc. for fixing a semiconductor wafer to an electrostatic chuck, thereby minimizing the generation of residues and bubbles that may occur when a semiconductor adhesive film is adhered to a semiconductor wafer in the system for fixing a semiconductor wafer to an electrostatic chuck. [Brief explanation of the drawings]

[0031] [Figure 1] 1 is a conceptual diagram of a system for fixing a semiconductor wafer to an electrostatic chuck in accordance with an embodiment of the present invention. [Figure 2] 1 is a conceptual diagram illustrating a method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention. [Figure 3] 1 is a conceptual diagram illustrating a method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention. [Figure 4] 1 is a conceptual diagram illustrating a method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention. [Figure 5] 1 is a conceptual diagram illustrating a method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention. [Figure 6] 1 is a conceptual diagram illustrating a method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention. [Figure 7]1 is a graph showing measured Young's modulus values ​​of a semiconductor adhesive film used in a system for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention. [Figure 8] 1 is a graph showing measured Young's modulus values ​​of a semiconductor adhesive film used in a system for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0032] Various embodiments of the present invention will now be described with reference to the accompanying drawings. It should be understood that the present invention is not limited to specific embodiments, but includes various modifications, equivalents, and / or alternatives of the embodiments of the present invention. In connection with the description of the drawings, similar reference numerals may be used to refer to similar components. In this document, the terms "have," "can have," "include," or "can include" refer to the presence of a given feature (e.g., a value, function, operation, or component such as a part) and do not exclude the presence of additional features. In this document, phrases such as "A or B," "at least one of A and / or B," or "one or more of A and / or B" include all possible combinations of the items listed together. For example, "A or B," "at least one of A and B," or "at least one of A or B" can refer to (1) at least one A, (2) at least one B, or (3) both at least one A and at least one B. The expression "configured to" used in this document may be used alternatively, depending on the context, e.g., "suitable for," "having the capacity to," "designed to," "adapted to," "made to," or "capable of." The term "configured to" does not necessarily mean "specifically designed to." The terms used in this document are merely used to describe particular embodiments and are not intended to limit the scope of other embodiments. A singular expression can include a plural expression unless the context clearly dictates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as commonly understood by a person of ordinary skill in the art described in this document. Terms used in this document that are defined in a general dictionary may be interpreted to have the same or similar meaning as the meaning they have in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless explicitly defined in this document. In some cases, even terms defined in this document should not be interpreted to exclude embodiments of this document. Therefore, the configurations of the embodiments described in this specification are merely some of the most preferred embodiments of the present invention and do not fully represent the technical ideas of the present invention, and there may be various equivalents and modifications that can replace them at the time of this application. Throughout the specification, when a part is said to "comprise" a certain element, this does not mean that it excludes other elements, but that it may further include other elements, unless otherwise specified to the contrary. The objectives, particular advantages, and novel features of the present invention described herein will become more apparent from the following detailed description and preferred embodiments taken in conjunction with the accompanying drawings. It should be noted that, when assigning reference numerals to components in each drawing, the same components are assigned the same numerals whenever possible, even when they appear in different drawings. Furthermore, terms such as "one side," "other side," "first," and "second" are used to distinguish one component from another, and are not intended to limit the components. In the following description of the present invention, a detailed description of related prior art that may unnecessarily obscure the gist of the present invention will be omitted. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will now be described in detail with reference to the accompanying drawings, in which like reference numerals refer to like elements throughout.

[0033] In this specification, the term "electrostatic chuck" refers to an electrostatic chuck (ESC) that is a device used to secure a wafer or film (process tape) during semiconductor manufacturing processes. This device uses electrostatic force to secure a wafer instead of physical means, preventing various problems that may occur during the process. Electrostatic chucks use electrostatic force to secure a wafer. This method involves applying a voltage between the wafer and the electrostatic chuck to generate an electrostatic attraction force. Electrostatic chucks are generally designed with a monopolar or bipolar structure, and each structure can be classified according to the number of electrodes.

[0034] In this specification, "reaction with an electrostatic chuck" refers to the fact that when a semiconductor adhesive film described later is positioned near an electrostatic chuck and a voltage is applied to the electrostatic chuck, mutual static electricity is generated between the semiconductor adhesive film and the electrostatic chuck, and the electrostatic chuck and the semiconductor adhesive film can be electrostatically attracted to each other by electrostatic attraction.

[0035] A system 1 for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention includes an electrostatic chuck 100, a base layer 210, a conductive layer 220 formed on the base layer 210, and an adhesive layer 230 formed on the conductive layer 220, and further includes a semiconductor adhesive film 200 fixed to the electrostatic chuck 100 so that the base layer 210 faces the electrostatic chuck 100, and a semiconductor wafer 300 adhered to the adhesive layer 230. In the system 1 for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the adhesive layer 230 may include a silicon-based compound.

[0036] 1 shows a system 1 for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention. A semiconductor wafer 300 adhered to an adhesive layer 230 of a semiconductor adhesive film 200 is fixed to an electrostatic chuck 100. Although the electrostatic chuck 100 is shown as being disposed at the top in FIG. 1, the arrangement direction of the system 1 may be changed and is not limited thereto. When a voltage is applied to the electrostatic chuck 100, the semiconductor adhesive film 200 reacts with the electrostatic chuck 100 and is fixed to the electrostatic chuck 100. The adhesive film for semiconductor 200 is formed in a form in which a base layer 210, a conductive layer 220, and an adhesive layer 230 are laminated in this order.

[0037] The substrate layer 210 may be selected from the group consisting of polyethylene terephthalate, polyethylene, polyimide, acrylic resin, cycloolefin polymer, mixtures thereof, and copolymers thereof.

[0038] The conductive layer 220 may be selected from the group consisting of poly(3,4-ethylenedioxythiophene) (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate) (PEDOT-PSS), carbon nanotubes (CNTs), graphene, indium tin oxide (ITO), silver nanowires, and combinations thereof. The conductive layer 220 of the present invention is characterized in that it is essentially required to be transparent in addition to the above electrical properties.

[0039] The conductive layer 220 may be formed by crosslinking a mixture of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane with aziridine. When forming the adhesive layer 230 on the conductive layer 220, a portion of the conductive layer 220 may be removed by a solvent that dissolves the material that makes up the adhesive layer 230. To prevent this, it is necessary to increase the solvent resistance of the conductive layer 220, which is achieved in the present invention by crosslinking with aziridine.

[0040] The weight ratio of polyurethane to poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS) in the conductive layer 220 may be 1:9, 1.5:8.5, or 3:7. If the content of PEDOT-PSS is less than this range, the surface resistance, dielectric loss, and dielectric constant required for reaction with an electrostatic chuck cannot be met. Conversely, if the content of PEDOT-PSS is greater than this range, the physical properties can be met, but the amount of polyurethane is too small to sufficiently crosslink with the aziridine crosslinker, which not only fails to ensure solvent resistance but is also undesirable from an economical standpoint.

[0041] The weight ratio of the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersible polyurethane mixture to aziridine in the conductive layer 220 may be 100:8 to 63, 100:10 to 63, or 100:12 to 63. If the weight ratio of aziridine is less than this range, it will not be able to crosslink sufficiently with the carboxyl groups of the water-dispersible polyurethane, and solvent resistance will not be ensured. Conversely, if the weight ratio exceeds this range, unreacted aziridine may migrate to the surface depending on the time and temperature, which is economically undesirable.

[0042] The poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane mixture of the conductive layer 220 may be a solution dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof. The solution may further include a stabilizer selected from the group consisting of ethylene glycol, sorbitol, and mixtures thereof.

[0043] The concentration of the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and polyurethane mixture dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof may be 0.8 to 1.2 wt % or 0.8 to 0.9 wt %. If the solution concentration is below this range, Pedot-PSS particles may come out to the surface, causing coating lines to form on the coating surface. Conversely, if the solution concentration exceeds this range, the solid content may decrease, and when the wet thickness is increased, the coating surface may become uneven due to the fluidity of the coating solution.

[0044] The thickness of the conductive layer 220 may be 0.03 to 3 μm. If the thickness of the conductive layer 220 is less than this range, the surface resistance will be high and the dielectric loss will be small, which may cause the wafer W to which the semiconductor adhesive film 200 is adhered to not be fixed to the electrostatic chuck, and if the thickness of the conductive layer 220 exceeds this range, the surface resistance will be low and the dielectric loss will be high, which may cause the wafer W to which the semiconductor adhesive film 200 is adhered to not be fixed to the electrostatic chuck. In addition, the conductive layer 220 can be gravure coated on the substrate layer 210 .

[0045] The conductive layer 220 can be dried for 30 to 90 seconds with hot air at 60 to 100°C or 20 to 35 Hz. If the drying time or temperature is less than the above range, the drying may be insufficient, resulting in incomplete curing or solvent volatilization, which may affect electrical properties such as dielectric constant.

[0046] The adhesive layer 230 may include at least one selected from the group consisting of a rubber-based compound, an acrylic-based compound, a silicon-based compound, and a urethane-based compound, and preferably includes a silicon-based compound.

[0047] The silicon-based compound may be derived from an organopolysiloxane of the following formula 1 or a derivative thereof and a hydrogen siloxane copolymer of the following formula 2 or a derivative thereof.

[0048] [ka]

[0049] Here, R1 and R8 are each independently any one selected from the group consisting of hydrogen, alkyl, and alkenyl, R2 to R7 are either hydrogen or alkyl, and n1 may be an integer of 5 to 200,000, preferably an integer of 500 to 100,000, and more preferably an integer of 1,000 to 50,000.

[0050] [ka]

[0051] Here, at least one of R9 to R18 is hydrogen, and the rest of R9 to R18 excluding the hydrogen moiety are each independently alkyl, n2 is an integer of 1 to 200, and n3 is an integer of 1 to 100.

[0052] Preferably, the organopolysiloxane of Chemical Formula 1 or its derivative is a polydimethylsiloxane containing vinyl groups at both ends, and its molecular weight may be a weight-average molecular weight of 600,000 to 700,000 and a number-average molecular weight of 300,000 to 400,000, and the content of the vinyl groups may be 0.02 to 0.2 mmol / g, 0.1 to 0.2 mmol / g, or 0.15 to 0.2 mmol / g. If the content of vinyl groups is less than the above range, crosslinking with Si-H may not be sufficient, and the dielectric loss value may increase, resulting in a failure to react with an electrostatic chuck. Conversely, if the content of vinyl groups is greater than the above range, the crosslink density with Si-H may increase, resulting in a failure to react with an electrostatic chuck, resulting in a failure to react with an electrostatic chuck.

[0053] Preferably, the hydrogen siloxane copolymer of formula 2 or its derivatives has one or two hydro groups (-H) substituted with an alkyl group having 1 or 2 carbon atoms. More preferably, the hydrogen siloxane copolymer of formula 2 may be an alkylhydrosiloxane-dialkylsiloxane copolymer, or even more preferably, a methylhydrosiloxane-dimethylsiloxane copolymer, in which R12 is hydrogen and the remaining R9 to R11 and R13 to R19 are substituted with methyl. The weight average molecular weight (Mw) of the hydrogen siloxane copolymer of formula 2 may be 1,000 to 10,000, and even more preferably 1,500 to 4,000.

[0054] The Si-H content of the hydrogen siloxane copolymer or derivative thereof of Chemical Formula 2 may be 4 to 16 mmol / g, 4 to 10 mmol / g, or 4 to 5 mmol / g. If the Si-H content is below this range, the vinyl groups contained in the organopolysiloxane or derivative thereof of Chemical Formula 1 may not be sufficiently crosslinked, resulting in high dielectric loss. Conversely, if the Si-H content exceeds this range, unreacted Si-H groups may be generated and migrate to the surface of the adhesive layer.

[0055] The silicon-based compound preferably uses platinum as a catalyst when reacting the compound of Chemical Formula 1 with the compound of Chemical Formula 2. In addition, the present invention can apply an addition reaction (curing) step to increase crosslink density and reduce the dielectric constant.

[0056] The molar ratio of the vinyl group contained in the organopolysiloxane of the formula 1 or its derivative to the Si—H group of the hydrogen siloxane copolymer of the formula 2 or its derivative may be 1:1-3.

[0057] If the molar ratio exceeds the above range, the crosslink density increases, but out-gassing occurs due to the hydrogen gas generated when the Si-H that has not reacted with the vinyl increases. Conversely, if the molar ratio is below the above range, the number of crosslinking points with the vinyl decreases, the crosslink density and the dielectric constant decrease, and the dielectric loss increases, which may make it difficult to react with the electrostatic chuck.

[0058] The adhesive layer 230 may be a pressure-sensitive adhesive layer. In addition to the organopolysiloxane or its derivative of Chemical Formula 1 and the hydrogen siloxane copolymer or its derivative of Chemical Formula 2, other components may be included to improve the physical properties of the pressure-sensitive adhesive layer.

[0059] Further components include silicone gum or MQ resin, etc. The adhesive layer can be adhered to sensitive areas such as wafers or organic coating layers, has good adhesive strength, and maintains a predetermined crosslink density so that the adhesive properties of the product can be maintained even after a certain period of time. The adhesive layer 230 can be formed on the conductive layer 220 by slot die coating or comma coating.

[0060] The adhesive layer 230 can be dried for 90 to 180 seconds with hot air at 60 to 150°C or 30 to 35 Hz. If the drying time or drying temperature is less than the above range, the drying may be insufficient, resulting in incomplete curing or solvent volatilization, which may affect electrical properties such as dielectric constant.

[0061] In the system 1 for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the adhesive layer 230 of the semiconductor adhesive film 200 can adhere to the coating layer 310 formed on the semiconductor wafer 300. In the system 1 for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the coating layer 310 may be formed of an organic coating agent.

[0062] In the system 1 for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the semiconductor wafer 300 may be adhered to the adhesive layer 230 while the coating layer 310 is formed on the semiconductor wafer 300. The coating layer 310 formed on the semiconductor wafer 300 may be formed to protect the semiconductor wafer 300. The coating layer 310 may be formed by, but is not limited to, methods such as spin coating, chemical vapor deposition, physical vapor deposition, atomic layer deposition, etc. The material of the coating layer 310 may be an organic coating agent, and more specifically, materials such as polyvinylpyrrolidone (PVP), PMMA (Polymethyl Methacrylate), and IPA (Isopropyl Alcohol) may be used. The adhesive layer 230 must have a characteristic that it has sufficient adhesion to the coating layer 310 while maintaining adhesion that allows it to be separated from the coating layer 310 without damaging the wafer 300. Another characteristic is that it must be formed so that it can be separated from the coating layer 310 without leaving any residue that may be generated by reaction between the coating layer 310 and the adhesive layer 230.

[0063] In a system 1 for fixing a semiconductor wafer 1 to an electrostatic chuck 100 according to one embodiment of the present invention, the semiconductor wafer 300 is fixed to the electrostatic chuck 100 when a voltage is applied to the electrostatic chuck 100, and the semiconductor wafer 300 can be separated from the electrostatic chuck 100 when no voltage is applied to the electrostatic chuck 100.

[0064] More specifically, when a voltage is applied to the electrostatic chuck 100, a Coulomb force or a Johnson-Rahbek force is generated between the electrostatic chuck 100 and the semiconductor wafer 300, thereby fixing the semiconductor wafer 300 to the electrostatic chuck 100. At this time, the semiconductor adhesive film 200 also reacts with the electrostatic chuck 100 and is fixed to the electrostatic chuck 100 by a Coulomb force or a Johnson-Rahbek force. The semiconductor adhesive film 200 can function to stably fix the semiconductor wafer 300 to the electrostatic chuck 100 and also to protect the semiconductor wafer 300 from being damaged by the electric charge applied from the electrostatic chuck 100.

[0065] When no voltage is applied to the electrostatic chuck 100, the force generated between the semiconductor wafer 300 and the electrostatic chuck 100 disappears, allowing the semiconductor wafer 300 to be separated from the electrostatic chuck 100. To achieve this, the force generated between the semiconductor adhesive film 200 and the electrostatic chuck 100 must also be able to disappear, and to achieve this, when no voltage is applied to the electrostatic chuck 100, the charge remaining on the semiconductor adhesive film 200 must be very small.

[0066] In the system 1 for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the semiconductor adhesive film 200 includes a release film layer 240 formed on the adhesive layer 230, and the semiconductor wafer 300 can be adhered to the adhesive layer 230 after the release film layer 240 is peeled off from the adhesive layer 230.

[0067] A release film layer 240 may be formed on the semiconductor adhesive film 200 used in the system 1 for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention. If the release film layer 240 is not formed, the film 200 may be used in the form of a tape. The release film layer 240 may serve to protect the adhesive layer 230. The release film layer 240 may be removed after the semiconductor adhesive film 200 is fixed to the electrostatic chuck 100.

[0068] In a system 1 for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, before the release film layer 240 is removed, in a state in which the semiconductor adhesive film 200 is fixed to the electrostatic chuck 100, when a voltage is applied to the electrostatic chuck 100, the force with which the electrostatic chuck 100 fixes the semiconductor adhesive film 200 in the horizontal direction is formed to be 200 gf / 150 mm or more, and when no voltage is applied to the electrostatic chuck 100, the force with which the electrostatic chuck 100 fixes the semiconductor adhesive film 200 in the horizontal direction can be formed to be 1 gf / 150 mm or less.

[0069] 2, it can be seen that the semiconductor adhesive film 200 is fixed to the electrostatic chuck 100. At this time, when a voltage is applied to the electrostatic chuck 100 and the semiconductor adhesive film 200 reacts with the electrostatic chuck 100 to be fixed to the electrostatic chuck 200, it is necessary to fix the semiconductor adhesive film 200 so that it does not move in the horizontal direction of the electrostatic chuck 100. Fixation in the horizontal direction is also very important because even the slightest shaking of the semiconductor wafer 300 is essential during the semiconductor process. At this time, the force with which the electrostatic chuck 100 fixes the semiconductor adhesive film 200 in the horizontal direction is formed to be 200 gf / 150 mm or more so that the electrostatic chuck 100 can stably fix the semiconductor adhesive film 200 and also stably fix the wafer 300 adhered to the film 200.

[0070] When no voltage is applied to the electrostatic chuck 100, the wafer 300 must be able to be stably separated from the electrostatic chuck 100, and the separation direction is formed in the horizontal direction of the electrostatic chuck 100 and the horizontal direction of the semiconductor adhesive film 200. Therefore, when no voltage is applied to the electrostatic chuck 100, the force with which the electrostatic chuck 100 holds the semiconductor adhesive film 200 in the horizontal direction may be formed to be 1 gf / 150 mm or less. The reason why a force may act between the semiconductor adhesive film 200 and the electrostatic chuck 100 even when no voltage is applied to the electrostatic chuck 100 is that residual charges may remain on the conductive layer 220 of the semiconductor adhesive film 200. Therefore, the conductive layer 220 is formed between the base layer 210 and the adhesive layer 230 to minimize the attractive force with the electrostatic chuck 100 generated by the residual charge formed on the conductive layer 220 when no voltage is applied to the electrostatic chuck 100, and the thickness of the conductive layer 220 is formed to be 0.03 to 3 μm. If the thickness of the conductive layer 220 exceeds 3 μm, the residual charge on the conductive layer 220 becomes large even after the voltage on the electrostatic chuck 100 is turned off, which may increase the attractive force between the semiconductor adhesive film 200 and the electrostatic chuck 100, making it difficult to separate the film 200. Also, if the thickness of the conductive layer 220 is less than 0.03 μm, when a voltage is applied to the electrostatic chuck 100, the amount of charge on the conductive layer 220 is small, which may cause the attractive force generated between the film 200 and the electrostatic chuck 100 to be too small, resulting in a weak clamping force and making it impossible for the conductive layer 220 to block the application of charge to the wafer 300.

[0071] In the system 1 for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the force required for peeling the release film layer 240 from the adhesive layer 230 by the semiconductor adhesive film 200 can be set to 0.8 to 1.1 gf / 25 mm.

[0072] The adhesive film 200 for semiconductors can be fed into semiconductor equipment through a roller system, and therefore the release film layer 240 of the adhesive film 200 for semiconductors must not be peeled off by the roller system. Therefore, it is preferable that the force required to peel the release film layer 240 from the adhesive layer 230 is 0.8 gf / 25 mm or more.

[0073] In addition, if the force for peeling the release film layer 240 from the adhesive layer 230 is greater than a certain force, the horizontal force applied to the semiconductor adhesive film 200 by the force for peeling the release film layer 240 may cause the semiconductor adhesive film 200 to move without being fixed to the electrostatic chuck 100, as shown in Fig. 3. Therefore, it is preferable that the force for peeling the release film layer 240 from the adhesive layer 230 be 1.1 gf / 25 mm or less.

[0074] In the system 1 for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the adhesive force formed between the coating layer 310 and the adhesive layer 230 can be greater than or equal to 0.8 gf / 25 mm and less than 2.5 gf / 25 mm.

[0075] The reason for setting an upper limit for the adhesive strength between the coating layer 310 and the adhesive layer 230 is to prevent damage to the wafer 300 that may occur when the coating layer 310 is peeled off from the wafer 300 when the coating layer 310 and the adhesive layer 230 are separated from each other, as shown in Fig. 6. Because the adhesive strength between the coating layer 310 and the wafer 300 may be 2.5 gf / 25 mm or more, the adhesive strength between the coating layer 310 and the adhesive layer 230 is set to be less than 2.5 gf / 25 mm, thereby preventing the coating layer 310 from peeling off from the wafer 300 when the coating layer 310 and the adhesive layer 230 are separated from each other.

[0076] The reason for setting a lower limit for the adhesive strength between the coating layer 310 and the adhesive layer 230 is that if the adhesive strength is lower than the reference value, there is a high possibility that a lifting phenomenon or a tunneling phenomenon (a phenomenon in which air gets trapped in the lifted portion) will occur between the coating layer 310 and the adhesive layer 230. Therefore, the adhesive strength between the coating layer 310 and the adhesive layer 230 can be set to 0.8 gf / 25 mm or more.

[0077] In the system 1 for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the adhesive force formed between the coating layer 310 and the adhesive layer 230 can be maintained even at temperatures between 10°C and 110°C.

[0078] In the semiconductor manufacturing process, a film that can perform normally at various temperatures is required, and the system 1 for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention can operate normally at temperatures between 10°C and 110°C, and more preferably, can operate normally at temperatures between 25°C and 100°C by maintaining the adhesive force formed between the coating layer 310 and the adhesive layer 230.

[0079] In the system 1 for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the Young's modulus value of the semiconductor adhesive film 200 when the release film layer 240 is removed can be formed to be 3500 to 4300 N / mm2.

[0080] 7 and 8 show Young's modulus values ​​measured in the longitudinal and width directions of the semiconductor adhesive film 200 used in the system 1 for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention. If the Young's modulus value of the semiconductor adhesive film 200 in a state in which the release film layer 240 is removed is formed to be less than 3500 N / mm2, there is no force for correcting the warp of the semiconductor wafer 300, and the fixing force to the wafer 300 may be weak. If the Young's modulus value of the semiconductor adhesive film 200 exceeds 4300 N / mm2, when the semiconductor adhesive film 200 and the wafer 300 are peeled from each other, a peeling force is applied to the wafer 300, and the wafer 300 may crack. 2 to 6 sequentially show a method for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention.

[0081] A method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention is a method for fixing a semiconductor wafer 300 to an electrostatic chuck 100 using a semiconductor adhesive film 200 having a base layer 210, a conductive layer 220, an adhesive layer 230, and a release film layer 240 laminated in this order, and may include a semiconductor adhesive film fixing step of fixing the semiconductor adhesive film 200 to the electrostatic chuck 100 so that the base layer 210 faces the electrostatic chuck 100 after a voltage is applied to the electrostatic chuck 100, a release film layer peeling step of peeling the release film layer 240 from the adhesive layer 230 of the semiconductor adhesive film 200, and a semiconductor wafer adhering step of adhering the semiconductor wafer 300 to the adhesive layer 230.

[0082] 2, the semiconductor adhesive film fixing step is a step of fixing the semiconductor adhesive film 200 to the electrostatic chuck 100. Since the semiconductor adhesive film 200 has a conductive layer 220 formed between the base layer 210 and the adhesive layer 230, when a voltage is applied to the electrostatic chuck 100, an electric charge is induced in the conductive layer 220, and an attractive force is generated between the film 200 and the electrostatic chuck 100.

[0083] 3, the release film layer peeling step is a step of peeling the release film layer 240 from the film 200 fixed to the electrostatic chuck 100. The adhesive strength between the adhesive layer 230 and the release film layer 240 is set in consideration of the possibility that the release film layer 240 may be peeled off by a roller that supplies the semiconductor adhesive film 200 to the semiconductor equipment and the possibility of film 200 moving when peeling the release film layer 240 from the film 200 fixed to the electrostatic chuck 100. Referring to FIG. 4, the semiconductor wafer adhering step is a step of adhering the wafer 300 to the adhesive layer 230.

[0084] The method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention may include an electrostatic chuck separation step of separating the semiconductor wafer 300 and the semiconductor adhesive film 200 from the electrostatic chuck 100 after the applied voltage to the electrostatic chuck 100 is turned off, and a semiconductor wafer peeling step of separating the semiconductor wafer 300 from the adhesive layer 230.

[0085] 5, the electrostatic chuck separation step is a step in which the wafer 300 and the film 200 are separated from the electrostatic chuck 100 while still adhered to each other after the applied voltage to the electrostatic chuck 100 is removed. Even after the applied voltage to the electrostatic chuck 100 is removed, residual charges induced in the conductive layer 220 may remain, causing a continuous attractive force between the electrostatic chuck 100 and the film 200, which may prevent the wafer 300 and the film 200 from being separated from the electrostatic chuck 100. Therefore, by forming the conductive layer 220 between the base layer 210 and the adhesive layer 230, the attractive force between the film 200 and the electrostatic chuck 100, which is generated by the residual charges formed on the conductive layer 220, can be minimized.

[0086] 6, the semiconductor wafer peeling step is a step of separating the semiconductor wafer 300 from the adhesive layer 230. At this time, the adhesive strength of the adhesive layer 230 can be set so that the semiconductor wafer 300 is not damaged but is fixed with an appropriate adhesive strength.

[0087] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the coating layer 310 formed on the semiconductor wafer 300 and the adhesive layer 230 may be adhered to each other in the semiconductor wafer adhering step. As shown in FIG. 4, the coating layer 310 formed on the semiconductor wafer 300 can be adhered to the adhesive layer 230 .

[0088] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the step of peeling the semiconductor wafer may be characterized by separating the coating layer 310 and the adhesive layer 230 from each other.

[0089] 6, the semiconductor wafer peeling step is a step of separating the coating layer 310 from the adhesive layer 230. While stably maintaining the fixing force between the coating layer 310 and the adhesive layer 230, the adhesive force between the coating layer 310 and the adhesive layer 230 can be appropriately formed so that the wafer 300 is not damaged when the coating layer 310 and the adhesive layer 230 are separated.

[0090] In the method for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, when a voltage is applied to the electrostatic chuck 100 in the semiconductor adhesive film fixing step, the force with which the electrostatic chuck 100 fixes the semiconductor adhesive film 200 in a horizontal direction can be formed to be 200 gf / 150 mm or more.

[0091] 2, if the film 200 is moved horizontally, the release film layer 240 cannot be stably peeled off, and the wafer 300 cannot be precisely adhered to the film 200. Therefore, when a voltage is applied to the electrostatic chuck 100, the force with which the electrostatic chuck 100 horizontally fixes the semiconductor adhesive film 200 may be formed to be 200 gf / 150 mm or more.

[0092] In the method for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, when no voltage is applied to the electrostatic chuck 100 in the electrostatic chuck separation step, the force with which the electrostatic chuck 100 fixes the semiconductor adhesive film 200 in the horizontal direction may be formed to be 1 gf / 150 mm or less.

[0093] 5, the film 200 and wafer 300 must be able to be stably separated from the electrostatic chuck 100 when no voltage is applied to the electrostatic chuck 100. The film 200 and wafer 300 can be separated from the electrostatic chuck 100 by moving in the horizontal direction. Therefore, when no voltage is applied to the electrostatic chuck 100, the force that holds the film 200 in the horizontal direction on the electrostatic chuck 100 must be 1 gf / 150 mm or less.

[0094] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, in the release film layer peeling step, the magnitude of the force for peeling the release film layer 240 from the adhesive layer 230 in the semiconductor adhesive film 200 may be formed to be 0.8 to 1.1 gf / 25 mm.

[0095] FIG. 3 shows the release film layer peeling step, and the explanation of the magnitude of the peel force generated between the adhesive layer 230 and the release film layer 240 is substituted for the explanation in System 1.

[0096] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the adhesive strength formed between the coating layer 310 and the adhesive layer 230 in the semiconductor wafer peeling step may be 0.8 to 2.5 gf / 25 mm.

[0097] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the adhesive force formed between the coating layer and the adhesive layer in the semiconductor wafer peeling step may be maintained even at a temperature of 10°C to 110°C.

[0098] 6 shows the semiconductor wafer peeling step, and the explanation of the adhesive force generated between the coating layer 310 and the adhesive layer 230 and the explanation of the temperature are substituted for the explanation in the system 1.

[0099] In the method for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, the Young's modulus of the adhesive film 200 for semiconductors after the release film layer peeling step may be formed to be 3500 to 4300 N / mm2.

[0100] FIG. 3 shows the release film layer peeling step, and the explanation of the Young's modulus value of the semiconductor adhesive film 200 in the state where the release film layer 240 has been removed after the release film layer peeling step is substituted for the explanation in System 1. Examples of the present invention will be described below.

[0101] Example Manufacturing example of semiconductor adhesive film 200: Base layer + conductive layer + adhesive layer + release film layer The adhesive film for semiconductor 200 is formed by laminating a base layer 210, a conductive layer 220, an adhesive layer 230, and a release film layer 240 in this order.

[0102] A 0.8 wt% aqueous solution of a mixture of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS) and water-dispersible polyurethane (PEDOT-PSS:PU = 1:9 wt) was crosslinked with various concentrations of aziridine (0 wt%, 0.05 wt%, 0.09 wt%, 0.1 wt%, 0.3 wt%, 0.5 wt%, and 0.6 wt%) at room temperature and pressure for 45 min. The crosslinked products were gravure coated onto a 25-100 μm thick polyethylene terephthalate substrate and dried at 60 °C for 20 s, 80 °C for 20 s, and 100 °C for 20 s with 35 Hz hot air to form conductive layers with thicknesses of 0.03-3 μm.

[0103] 27g of polydimethylsiloxane (weight average molecular weight approximately 650,000) of formula 1 containing vinyl groups at both ends with a content of 0.2mmol / g and 3g of methylhydrosiloxane-dimethylsiloxane copolymer (weight average molecular weight approximately 2,500) of formula 2 having a Si-H content of 4mmol / g were mixed with 70g of toluene, and 0.005g of platinum was added as a catalyst to react at room temperature and atmospheric pressure for 200 minutes. The product was slot die coated onto the conductive layer and dried with hot air at 60°C for 50 seconds, 110°C for 50 seconds, and 150°C for 50 seconds at 35Hz to form an adhesive layer with a thickness of 15-50μm.

[0104] Test Example 1: Properties of semiconductor adhesive film by composition

[0105] The presence or absence of the conductive layer 220 of the semiconductor adhesive film 200, the stacking order of the conductive layer 220, the horizontal fixing force in the electrostatic chuck 100 due to the components of the adhesive layer 230, the peeling force of the release film layer 240, etc. are grasped.

[0106] Comparative Example 1: In Comparative Example 1, the adhesive film for semiconductors is formed in the order of a base layer, an adhesive layer, and a release film layer, and the base layer is formed of a polyolefin-based material, and the adhesive layer is formed of an acrylic compound.

[0107] Comparative Example 2: In Comparative Example 2, the semiconductor adhesive film is formed in the order of a conductive layer, a base layer, a conductive layer, an adhesive layer, and a release film layer, and the multiple conductive layers are formed in the same manner as in the manufacturing example of the semiconductor adhesive film 200, the base layer is formed of polyethylene terephthalate, and the adhesive layer is formed of a silicon-based compound according to the manufacturing example of the semiconductor adhesive film 200.

[0108] Comparative Example 3: In Comparative Example 3, the semiconductor adhesive film was formed in the order of base layer, conductive layer, adhesive layer, release film layer, and conductive layer, and the conductive layer was formed in the same manner as in the manufacturing example of semiconductor adhesive film 200, the base layer was formed of polyethylene terephthalate, and the adhesive layer was formed of a silicon-based compound in accordance with the manufacturing example of semiconductor adhesive film 200.

[0109] Example 1: The adhesive film for semiconductor in Example 1 was formed in the same manner as in the manufacturing example of the adhesive film for semiconductor 200 .

[0110] [Table 1]

[0111] Explanation of film horizontal fixing force (gf / 150mm) When a voltage is applied to the electrostatic chuck 100, the fixing force of the semiconductor adhesive film 200 in the horizontal direction is measured.

[0112] In Comparative Example 1, since no conductive layer is formed, no horizontal fixing force is generated on the film in the electrostatic chuck 100 even when a voltage is applied. Naturally, since there is no conductive layer, no horizontal fixing force is generated even when no voltage is applied.

[0113] In Comparative Example 2, the conductive layer is formed not only between the base layer and the adhesive layer but also on the base layer. Therefore, when a voltage is applied to the electrostatic chuck 100, a strong charge is induced in the conductive layer. However, because the conductive layer is formed on the base layer and faces the electrostatic chuck 100, residual charge remains in the conductive layer even when no voltage is applied, resulting in the generation of an excessive clamping force exceeding 0.1 gf / 150 mm. Therefore, in Comparative Example 2, the film and wafer cannot be stably separated even when the voltage to the electrostatic chuck is turned off.

[0114] In Comparative Example 3, the conductive layer is formed not only between the base material layer and the adhesive layer but also on the release film layer. Since the conductive layer in Comparative Example 3 is not formed near electrostatic chuck 100, an appropriate horizontal fixing force of 210 gf / 150 mm is generated even when a voltage is applied to electrostatic chuck 100, and an appropriate horizontal fixing force of 0 gf / 150 mm is generated even when no voltage is applied to electrostatic chuck 100.

[0115] In Example 1, since the conductive layer is formed between the base material layer and the adhesive layer, when a voltage is applied to the electrostatic chuck 100, an appropriate horizontal fixing force of 210 gf / 150 mm for fixing the semiconductor adhesive film 200 in the electrostatic chuck 100 is generated, and even when no voltage is applied to the electrostatic chuck 100, an appropriate horizontal fixing force of 0 gf / 150 mm is generated.

[0116] Explanation of release film peeling force (gf / 25mm) The peeling force that occurs when peeling the release film from the adhesive layer will be described.

[0117] The adhesive layer of Comparative Example 1 is formed of an acrylic compound, and in this case, the peeling force of the release film exceeds 2.5 gf / 25 mm, causing the electrostatic chuck 100 to fail to fix the film 200 horizontally and resulting in a problem of it shaking or vibrating.

[0118] The adhesive layer in Comparative Example 3 is formed from a silicon-based compound and is characterized by a conductive layer formed on a release film layer. A thicker conductive layer is formed on the release film layer, and the physical properties of the conductive layer make it easier to peel the release film layer from the adhesive layer, resulting in a peel strength of 0.6 to 0.9 gf / 25 mm. Therefore, the peel strength between the adhesive layer and the release film layer in Comparative Example 3 may be less than 0.8 gf / 25 mm, which increases the risk of the release film layer being peeled off by the roller that provides the film to the semiconductor equipment.

[0119] In Example 1 and Comparative Example 2, the adhesive layer is formed of a silicon-based compound, and no conductive layer is formed on the release film layer. Therefore, the release film layer peel strength in Example 1 is formed to be 0.9 to 1.1 gf / 25 mm, and the release film layer peel strength in Comparative Example 2 is formed to be 0.8 to 1.1 gf / 25 mm, so the release film peel strength can be formed between 0.8 and 1.1 gf / 25 mm.

[0120] Explanation of whether or not residue is generated when peeling off the coating layer and adhesive layer

[0121] In Comparative Example 1, the adhesive layer is made of an acrylic compound, and when it adheres to the coating layer and is separated, the coating layer is removed, leaving behind residue.

[0122] In contrast, in Comparative Examples 2 and 3 and Example 1, the adhesive layer is formed of a silicon-based compound, and when it adheres to the coating layer and is separated, there is little possibility that the coating layer will be removed and residue will remain.

[0123] Test Example 2: Characteristics of adhesive layer materials

[0124] The coating layer is peeled off due to the adhesive strength between the coating layer and the adhesive layer, and the presence of residues caused by the reaction between the coating layer and the adhesive layer is tested. The coating layer is separated from the adhesive layer both at the initial stage of adhesion and after a certain period of time. The coating layer can be made of an organic coating agent, and more specifically, materials such as polyvinylpyrrolidone (PVP), PMMA (Polymethyl Methacrylate), and IPA (Isopropyl Alcohol) can be used.

[0125] Example 2: The adhesive film for semiconductors in Example 2 was formed in the same manner as in the manufacturing example of the adhesive film for semiconductors 200. The adhesive layer was formed of a silicon-based compound.

[0126] Comparative Example 4: The adhesive layer of the adhesive film for semiconductors in Comparative Example 4 was formed from a urethane compound.

[0127] Comparative Example 5: The adhesive layer of the adhesive film for semiconductors in Comparative Example 5 was formed from an acrylic compound.

[0128] [Table 2]

[0129] In Table 2, the initial peeling refers to the case where the coating layer and the adhesive layer are peeled off 30 minutes after they are adhered to each other.

[0130] The adhesive force between the semiconductor wafer 300 and the coating layer 310 is 2.5 gf / 25 mm. Therefore, if the adhesive force between the coating layer 310 and the adhesive layer 230 is greater than 2.5 gf / 25 mm, the coating layer is more likely to peel off. Furthermore, the strong adhesive force between the coating layer 310 and the adhesive layer 230 may increase the possibility that the coating layer 310 and the adhesive layer 230 may react with each other and leave residue.

[0131] In Example 2, the adhesive layer was formed using a silicone-based compound, and the initial adhesive strength between the coating layer 310 and adhesive layer 230 was 0.9 gf / 25 mm. There was no significant difference between the initial adhesive strength (0.9 gf / 25 mm) and the initial adhesive strength (1.1 gf / 25 mm) after 5 days and 7 days after the coating layer 310 and adhesive layer 230 were bonded. Furthermore, although the adhesive strength after 7 days was higher than the initial adhesive strength, it never exceeded 2.5 gf / 25 mm. This demonstrates the superiority of an adhesive layer made of a silicone-based compound. Furthermore, in Example 2, no problems such as residue or peeling of the coating film occurred in any of the cases, including initial peeling, peeling after 5 days, or peeling after 7 days.

[0132] In the case of Comparative Example 4, the initial adhesive strength between the coating layer and adhesive layer was 1.8 gf / 25 mm, but after 7 days the adhesive strength increased to 3.4 gf / 25 mm, nearly double the initial adhesive strength, indicating a problem with the adhesive layer made of a urethane compound used in Comparative Example 4. Also, in Comparative Example 4, the initial peeling did not result in the generation of residue or peeling of the coating film, but after 5 days and 7 days, the coating layer and adhesive layer reacted, leaving uneven residue on the wafer, which caused problems.

[0133] In the case of Comparative Example 5, the initial adhesive strength between the coating layer and adhesive layer was 1.4 gf / 25 mm, but after 7 days the adhesive strength increased to 8.8 gf / 25 mm, nearly 7 times the initial adhesive strength, indicating a problem with the adhesive layer made of an acrylic compound used in Comparative Example 5. Furthermore, in Comparative Example 5, even during the initial peeling, unevenness remained on the wafer due to residues generated by the reaction between the coating layer and adhesive layer, and peeling after 5 and 7 days also caused problems with the coating film peeling off.

[0134] Test Example 3: Characteristics due to adhesive strength between adhesive layer and coating layer

[0135] Even if the adhesive layer is made of a silicone compound, if the adhesive strength between the adhesive layer and the coating layer exceeds 2.5gf / 25mm, residue may be generated or the coating layer may peel off when peeling the adhesive layer from the coating layer.

[0136] Here, the material of the coating layer may be formed of an organic coating agent, and more specifically, materials such as polyvinylpyrrolidone (PVP), PMMA (Polymethyl Methacrylate), and IPA (Isopropyl Alcohol) may be used.

[0137] [Table 3]

[0138] In Table 3, the initial peeling refers to the case where the coating layer and the adhesive layer are peeled off 30 minutes after they are adhered to each other.

[0139] In Example 3, it was found that the adhesive strength between the adhesive layer 230 made of a silicon-based compound and the coating layer 240 was 1.5 gf / 25 mm, and in this case, when peeling the adhesive layer and the coating layer at the initial stage of adhesion or after two weeks, there was no problem of residue remaining or the coating layer peeling off.

[0140] In Comparative Example 6, the adhesive strength between the silicone-based compound adhesive layer and the coating layer was 2.5 gf / 25 mm. In this case, when the adhesive layer and coating layer were peeled off at the initial stage of adhesion, there were no issues with residue remaining or the coating layer peeling off. However, when the adhesive layer and coating layer were peeled off after two weeks, there were cases where unevenness due to residue generated by the reaction between the adhesive layer and the coating layer remained on the wafer. In Comparative Example 6, the adhesive strength was 2.5 gf / 25 mm, and there were almost no issues with residue or coating layer peeling, but there was an issue with very fine unevenness remaining on the wafer when peeled off after two weeks.

[0141] In Comparative Example 7, the adhesive strength between the adhesive layer made of a silicon-based compound and the coating layer was 3.3 gf / 25 mm, and in this case, when the adhesive layer and coating layer were peeled off at the initial stage of adhesion, there was no problem of residue remaining or the coating layer peeling off. However, when the adhesive layer and coating layer were peeled off after two weeks, there was a problem of residue remaining on the wafer due to the reaction between the adhesive layer and the coating layer.

[0142] In Comparative Example 8, the adhesive strength between the adhesive layer made of a silicon-based compound and the coating layer was 7.0 gf / 25 mm, which caused a problem of residues remaining on the wafer due to the reaction between the adhesive layer and the coating layer. Also, when the adhesive layer and the coating layer were peeled off after two weeks, the coating layer peeled off.

[0143] Test Example 4: Temperature-dependent characteristics

[0144] In Examples 4 to 7, the adhesive layer of the semiconductor adhesive film is laminated to the semiconductor wafer 300 at different temperatures. At this time, the semiconductor adhesive film used in Examples 4 to 7 is formed according to the manufacturing example of the semiconductor adhesive film mentioned above.

[0145] [Table 4]

[0146] Looking at Examples 4 to 7, it can be seen that the adhesive strength between the adhesive layer and the coating layer of the film manufactured according to the manufacturing examples of the adhesive film for semiconductor is maintained at 0.8 gf / 25 mm or more and less than 2.5 gf / 25 mm, regardless of the temperature in the range of 25°C to 100°C. In addition, regardless of the temperature in the range of 25°C to 100°C, there is no problem of residue generation or peeling of the coating layer. Therefore, the adhesive film for semiconductor 200 according to one embodiment of the present invention can maintain the same physical properties under various temperature conditions.

[0147] The present invention has been described in detail above through specific examples, but these are for the purpose of specifically explaining the present invention, and the present invention is not limited thereto. It is clear that modifications and improvements can be made by a person having ordinary knowledge in the art within the technical spirit of the present invention. Any mere modifications or variations of the present invention are within the scope of the present invention, and the specific scope of protection of the present invention will be defined by the appended claims. [Explanation of symbols]

[0148] 1: A system for fixing a semiconductor wafer to an electrostatic chuck 100: Electrostatic chuck 200: Semiconductor adhesive film 210: Base material layer 220: Conductive layer 230: Adhesive layer 240: Release film layer 300: Wafer 310: Coating layer

Claims

1. Electrostatic chuck; A semiconductor adhesive film including a base layer, a conductive layer formed on the base layer, and an adhesive layer formed on the conductive layer, the base layer being fixed to the electrostatic chuck so that the base layer faces the electrostatic chuck; and a semiconductor wafer adhered to the adhesive layer; 1. A system for securing a semiconductor wafer to an electrostatic chuck, comprising:

2. The adhesive layer of the semiconductor adhesive film adheres to the coating layer formed on the semiconductor wafer.

10. The system for securing a semiconductor wafer to an electrostatic chuck according to claim 1.

3. When a voltage is applied to the electrostatic chuck, the semiconductor wafer is fixed to the electrostatic chuck, and when a voltage is not applied to the electrostatic chuck, the semiconductor wafer is separated from the electrostatic chuck.

10. The system for securing a semiconductor wafer to an electrostatic chuck according to claim 1.

4. The semiconductor adhesive film includes a release film layer formed on the adhesive layer, The semiconductor wafer is adhered to the adhesive layer after the release film layer is peeled from the adhesive layer.

10. The system for securing a semiconductor wafer to an electrostatic chuck according to claim 1.

5. Before the release film layer is removed, in a state where the semiconductor adhesive film is fixed to the electrostatic chuck, When a voltage is applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in the horizontal direction is formed to be 200 gf / 150 mm or more, and when a voltage is not applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in the horizontal direction is formed to be 1 gf / 150 mm or less.

5. The system for securing a semiconductor wafer to an electrostatic chuck according to claim 4.

6. The force required to peel the release film layer from the adhesive layer in the semiconductor adhesive film is 0.8 to 1.1 gf / 25 mm.

5. The system for securing a semiconductor wafer to an electrostatic chuck according to claim 4.

7. The adhesive strength formed between the coating layer and the adhesive layer is 0.8 gf / 25 mm or more and less than 2.5 gf / 25 mm.

3. The system for securing a semiconductor wafer to an electrostatic chuck according to claim 2.

8. The adhesive strength formed between the coating layer and the adhesive layer is maintained even at temperatures between 10°C and 110°C.

8. The system for securing a semiconductor wafer to an electrostatic chuck according to claim 7.

9. The Young's modulus value of the semiconductor adhesive film is formed to be 3500 to 4300 N / mm2 10. The system for securing a semiconductor wafer to an electrostatic chuck according to claim 1.

10. The adhesive layer is Contains silicon compounds 3. The system for securing a semiconductor wafer to an electrostatic chuck according to claim 2.

11. The coating layer is Formed with organic coating agents 3. The system for securing a semiconductor wafer to an electrostatic chuck according to claim 2.

12. A method for fixing a semiconductor wafer to an electrostatic chuck using an adhesive film for semiconductors, the adhesive film having a base layer, a conductive layer, an adhesive layer, and a release film layer laminated in this order, a semiconductor adhesive film fixing step of fixing the semiconductor adhesive film to the electrostatic chuck so that the base layer faces the electrostatic chuck after a voltage is applied to the electrostatic chuck; A release film layer peeling step of peeling the release film layer from the adhesive layer of the semiconductor adhesive film; and a semiconductor wafer adhering step of adhering the semiconductor wafer to the adhesive layer; 1. A method for fixing a semiconductor wafer to an electrostatic chuck, comprising:

13. After the voltage applied to the electrostatic chuck is removed, the semiconductor wafer and the semiconductor adhesive film are both separated from the electrostatic chuck; and a semiconductor wafer peeling step of separating the semiconductor wafer from the adhesive layer; 13. The method of claim 12 for securing a semiconductor wafer to an electrostatic chuck.

14. In the semiconductor wafer adhering step, The coating layer formed on the semiconductor wafer and the adhesive layer are adhered to each other.

14. The method for fixing a semiconductor wafer to an electrostatic chuck according to claim 12 or 13.

15. In the semiconductor wafer peeling step, Separating the coating layer and the adhesive layer from each other 15. The method of claim 14 for securing a semiconductor wafer to an electrostatic chuck.

16. In the semiconductor adhesive film fixing step, when a voltage is applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in a horizontal direction is formed to be 200 gf / 150 mm or more.

13. The method of claim 12 for securing a semiconductor wafer to an electrostatic chuck.

17. In the electrostatic chuck separation step, when no voltage is applied to the electrostatic chuck, the force with which the electrostatic chuck horizontally fixes the semiconductor adhesive film is formed to be 1 gf / 150 mm or less.

14. The method of claim 13 for securing a semiconductor wafer to an electrostatic chuck.

18. In the release film layer peeling step, the force for peeling the release film layer from the adhesive layer of the semiconductor adhesive film is formed to be 0.8 to 1.1 gf / 25 mm.

13. The method of claim 12 for securing a semiconductor wafer to an electrostatic chuck.

19. In the semiconductor wafer peeling step, the adhesive strength formed between the coating layer and the adhesive layer is 0.8 or more and less than 2.5 gf / 25 mm.

16. The method of claim 15 for securing a semiconductor wafer to an electrostatic chuck.

20. In the semiconductor wafer peeling step, the adhesive strength formed between the coating layer and the adhesive layer is maintained even at temperatures of 10°C to 110°C.

20. The method of claim 19 for securing a semiconductor wafer to an electrostatic chuck.

21. After the release film layer peeling step, the Young's modulus of the semiconductor adhesive film is formed to be 3500 to 4300 N / mm2.

13. The method of claim 12 for securing a semiconductor wafer to an electrostatic chuck.

22. The adhesive layer is Contains silicon compounds 15. The method of claim 14 for securing a semiconductor wafer to an electrostatic chuck.

23. The coating layer is Formed with organic coating agents 15. The method of claim 14 for securing a semiconductor wafer to an electrostatic chuck.

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