Substrate processing apparatus and substrate processing method

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method, and the technical problem to be solved is to provide a substrate processing apparatus and a substrate processing method that can reduce the time required to determine the center coordinates of the edge region of a bevel-etched substrate. The substrate processing apparatus thereof is a substrate processing apparatus for inspecting a substrate in which a bevel-etched region is formed on the edge, and includes an inspection unit that sets at least three or more coordinates as inspection coordinates in the bevel-etched region of the substrate, and calculates the center coordinates of a circle passing through the set at least three or more inspection coordinates using the center coordinates of the bevel-etched region.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Plasma refers to an ionized gaseous state composed of ions, radicals, and electrons, etc., and is generated by extremely high temperatures, strong electric fields, or radio frequency electromagnetic fields (RF Electromagnetic Fields). The semiconductor device manufacturing process includes an ashing or etching process for removing the film quality on the substrate using plasma. The ashing or etching process is carried out by the ions and radical particles contained in the plasma colliding with or reacting with the film quality on the substrate. The process of processing the substrate using plasma is carried out in various ways. Among them, a bevel etching device for processing the edge region of the substrate transmits plasma to the edge region of the substrate to bevel etch the edge region of the substrate, and the edge region of the bevel-etched substrate is formed in a circular ring shape.

[0003] Thereafter, the substrate with the edge region bevel-etched is inspected using a vision system to check whether the width between the outer peripheral line of the substrate and the inner line of the ring-shaped bevel-etched edge region is within a certain value, and whether the bevel etching is performed at a uniform distance from the outer peripheral line of the substrate.

[0004] In this case, the vision system sets 8 points in the middle inner region of the bevel-etched region, obtains the center values of two points each facing the center of the substrate, and calculates the average value of the center values as the center coordinates of the bevel-etched region.

[0005] However, such a method has a problem that the accuracy drops when one value deviates greatly when selecting 8 points, and there is a problem that a lot of working time is required because the values for the 8 points have to be searched and input one by one.

Summary of the Invention

[0006] The technical objective of the present invention, in order to solve the aforementioned problems, is to provide a substrate processing apparatus and a substrate processing method that can reduce the time required to determine the center coordinates of the edge region of a bevel-etched substrate.

[0007] Another technical problem addressed by the present invention is to provide a substrate processing apparatus and a substrate processing method that improve the accuracy of the center coordinate values ​​when determining the center coordinate values ​​of the edge region of a bevel-etched substrate.

[0008] The problems that this invention aims to solve are not limited to those described above, and other problems not mentioned can be clearly understood by a person with ordinary skill in the art to which this invention pertains from this specification and the accompanying drawings. [Means for solving the problem]

[0009] The substrate processing apparatus of the present invention for achieving the aforementioned technical problems is a substrate processing apparatus for inspecting a substrate in which a bevel-etched region is formed on the edge, and includes an inspection unit that sets at least three coordinates as inspection coordinates in the bevel-etched region of the substrate, and calculates the center coordinates of a circle passing through the set at least three inspection coordinates using the center coordinates of the bevel-etched region.

[0010] According to one embodiment, the three or more inspection coordinates are input into the equation of a circle to calculate the unknowns, and the center of the equation of the circle containing the unknowns can be calculated using the center coordinates of the bevel etching region.

[0011] According to one embodiment, the inspection unit can detect an inner line formed by the lines closest to the center of the substrate when the bevel etching region is viewed on a flat plane across a wide surface of the substrate, and an outer line corresponding to the outer edge of the substrate, and set the inspection coordinates on the inner line.

[0012] According to one embodiment, the inspection unit sets at least three coordinates as inspection coordinates in the bevel-etched region of the substrate and sets them as a first group, and sets at least three coordinates as inspection coordinates in the bevel-etched region of the substrate, but sets inspection coordinates at positions different from the inspection coordinates set in the first group and sets them as a second group, the inspection unit calculates the first center coordinate of the bevel-etched region by calculating the center coordinate of a circle passing through the inspection coordinates of the first group, and calculates the second center coordinate of the bevel-etched region by calculating the center coordinate of a circle passing through the inspection coordinates of the second group, and the inspection unit can calculate the average of the first center coordinate and the second center coordinate using the center coordinate of the bevel-etched region.

[0013] According to one embodiment, when the inspection unit selects the inspection coordinates of the first group and the inspection coordinates of the second group, it can select them at positions arranged at a predetermined angle with respect to the center of the substrate.

[0014] According to one embodiment, the bevel etching portion further includes a bevel etching area formed by bevel etching the edge of the substrate, wherein the bevel etching portion is

[0015] The system may include a housing having a processing space, a support unit positioned in the processing space and used by a lower electrode to support a substrate, an upper electrode unit positioned opposite the support unit, a gas supply unit that supplies an inactive gas to the central region of the substrate and a process gas to the edge region of the substrate, and a power supply that supplies power to the upper electrode unit and the support unit to form plasma in the edge region of the substrate to which the process gas is supplied, thereby forming a bevel etching region on the substrate.

[0016] According to one embodiment, the process may include: an etching region detection step in which the inspection unit detects a bevel etching region of the substrate; an inspection coordinate setting step in which the inspection unit detects at least three or more inspection coordinates in the bevel etching region; and a center coordinate calculation step in which the inspection unit sets at least three or more coordinates in the bevel etched region of the substrate as inspection coordinates and calculates the center coordinate of the bevel etching region by calculating the center coordinate of a circle passing through the set at least three or more inspection coordinates.

[0017] According to one embodiment, in the center coordinate calculation step, the three or more inspection coordinates are input into the circle equation to calculate the unknowns, and the center of the circle equation including the unknowns can be calculated using the center coordinates of the bevel etching region.

[0018] According to one embodiment, in the center coordinate calculation step, the inspection unit detects an inner line formed by the lines closest to the center of the substrate when the bevel etching region is viewed on a flat plane, and an outer line corresponding to the outer edge of the substrate, and the inspection coordinate can be set on the inner line.

[0019] According to one embodiment, in the center coordinate calculation step, the inspection unit sets at least three or more coordinates as inspection coordinates in the bevel-etched region of the substrate and sets them as a first group, and sets at least three or more coordinates as inspection coordinates in the bevel-etched region of the substrate, but sets inspection coordinates at positions different from the inspection coordinates set in the first group and sets them as a second group, the inspection unit calculates the center coordinate of the circle passing through the inspection coordinates of the first group as the first center coordinate of the bevel-etched region, the center coordinate of the circle passing through the inspection coordinates of the second group as the second center coordinate of the bevel-etched region, and the inspection unit can calculate the average value of the first center coordinate and the second center coordinate using the center coordinate of the bevel-etched region.

[0020] According to one embodiment, in the center coordinate calculation step, when the inspection unit selects the inspection coordinates of the first group and the inspection coordinates of the second group, the positions can be selected at a fixed interval at a predetermined angle with respect to the center of the substrate.

[0021] Furthermore, according to another embodiment, the substrate processing apparatus is a substrate processing apparatus for inspecting a substrate in which a bevel etching region is formed on the edge, and may include an inspection unit that sets at least four or more coordinates as inspection coordinates in the bevel etching region, generates multiple circles by combining the four or more inspection coordinates with three intermediate inspection coordinates, and calculates the average value of the center coordinates for each of the multiple circles using the center coordinate of the bevel etching region.

[0022] In another embodiment, the inspection unit can input three inspection coordinates passing through each of the multiple circles into the equation of the circle when the multiple circles are generated, calculate the unknown, and calculate the center of the equation of the circle containing the unknown using the center coordinates of each of the multiple circles.

[0023] In another embodiment, the inspection unit can detect an inner line formed by the lines closest to the center of the substrate when the bevel etching region is viewed on a flat plane across a wide surface of the substrate, and an outer line corresponding to the outer edge of the substrate, and set the inspection coordinates on the inner line.

[0024] According to another embodiment, when the inspection unit selects the four or more inspection coordinates, it can select them at positions arranged at regular intervals at a predetermined angle with respect to the center of the substrate.

[0025] According to another embodiment, it further includes a bevel etching unit that forms the bevel etching region by bevel etching the edge of the substrate, and the bevel etching unit includes a housing having a processing space, a support unit disposed in the processing space and used as a lower electrode to support the substrate, an upper electrode unit disposed at a position facing the support unit, a gas supply unit that supplies an inert gas to a central region of the substrate and supplies a process gas to an edge region of the substrate, and a power supply that supplies power to the upper electrode unit and the support unit to form plasma in the edge region of the substrate where the process gas is supplied so as to form a bevel etching region on the substrate.

[0026] According to another embodiment, it includes an etching region detection step of detecting a bevel etching region of a substrate in an inspection unit, an inspection coordinate setting step of detecting at least 4 or more inspection coordinates in the bevel etching region, and the inspection unit sets at least 4 or more coordinates in the bevel etching region as inspection coordinates, combines the middle 3 inspection coordinates among the 4 or more inspection coordinates to generate a plurality of circles, and calculates the average value of the center coordinates for each of the plurality of circles as the center coordinate of the bevel etching region.

[0027] According to another embodiment, in the center coordinate calculation step, when the inspection unit views the bevel etching region on the plane of the wide surface of the substrate, it detects an inner line formed by lines closest to the center of the substrate and an outer line corresponding to the outer peripheral edge of the substrate, and the inspection coordinates can be set on the inner line.

[0028] According to another embodiment, in the center coordinate calculation step, when the inspection unit selects the 4 or more inspection coordinates, it can be selected at positions arranged at a fixed interval at a preset angle based on the center of the substrate.

[0029] According to another embodiment, in the center coordinate calculation step, when generating the plurality of circles, three inspection coordinates passing through each of the plurality of circles are input into the equation of the circle to calculate the unknowns, and the center of the equation of the circle including the unknowns is calculated as the center coordinate of each of the plurality of circles. [Effects of the Invention]

[0030] This invention has the effect of reducing the time required to determine the center coordinates of the edge region of a bevel-etched substrate.

[0031] Furthermore, the present invention has the effect of improving the accuracy of the center coordinate values ​​when determining the center coordinate values ​​of the edge region of a bevel-etched substrate.

[0032] The effects of the present invention are not limited to those described above, and other effects not mentioned can be clearly understood by a person with ordinary skill in the art to which the present invention pertains from this specification and the accompanying drawings. [Brief explanation of the drawing]

[0033] [Figure 1] Figure 1 is a plan view of the substrate processing apparatus of the present invention. [Figure 2] Figure 2 is a cross-sectional view of the bevel etching area provided to the process chamber in Figure 1. [Figure 3] Figure 3 is a partial side view of the inspection unit shown in Figure 2. [Figure 4] Figure 4 is a plan view example of the screen showing the inspection unit shown in Figure 3 detecting a bevel-etched substrate. [Figure 5] Figure 5 is a sequence diagram of a substrate processing method according to one embodiment of the present invention. [Figure 6] Figure 6 is a plan view illustrating the screen of a substrate processing apparatus according to another embodiment of the present invention, showing the detection of a bevel-etched substrate by the inspection unit. [Figure 7] Figure 7 is a sequence diagram of a substrate processing method according to another embodiment of the present invention. [Figure 8] Figure 8 is a plan view illustrating the screen of the inspection unit of a substrate processing apparatus according to the present invention or another embodiment, which detects a bevel-etched substrate. [Figure 9] Figure 9 is a sequence diagram of a substrate processing method according to another embodiment of the present invention. [Modes for carrying out the invention]

[0034] The following describes embodiments for carrying out the present invention with reference to the attached drawings. In this case, when the entire specification is said to "encompass" a certain component, this does not control other components unless specifically opposed, but rather means that other components may be further included. Also, the "... Terms such as "part" are considered to mean a unit that processes at least one function or operation when describing electronic hardware or electronic software, and when describing mechanical devices, they are considered to mean a single part, function, application, pivot point, or drive element. Furthermore, identical or similar configurations will be described using the same drawing reference numerals, and redundant descriptions of identical components will be omitted.

[0035] Furthermore, when an element or layer is referred to in the present invention as “on,” “connected,” “joined,” “attached,” “adjacent,” or “covering” another element or layer, this means that it is directly on, connected to, joined to, attached to, touching, or covering the other element or layer, or that intermediate elements or layers may be present. Conversely, when an element is referred to as “directly on,” “directly connected,” or “directly joined” another element or layer, it should be understood that there are no intermediate elements or layers. Throughout the specification, the same reference numeral refers to the same element. The term “and / or” as used in the present invention includes all combinations and subcombinations of one or more items from the enumerated items.

[0036] Figure 1 is a plan view of the substrate processing apparatus of the present invention. Figure 2 is a cross-sectional view of the bevel etching section provided in the process chamber of Figure 1. Figure 3 is a partial side view of the inspection section shown in Figure 2. Figure 4 is a plan view illustrating the screen where the inspection section shown in Figure 3 detects a bevel-etched substrate.

[0037] As shown in Figures 1 to 4, the substrate processing equipment 1 includes an equipment front end module (EFEM) 20, a processing module 30, a load lock chamber 40, a transfer chamber 50, a process chamber 60, and an inspection unit 70.

[0038] The equipment front end module 20 has a load port 10 and a transfer frame 21. The load port 10 is located in front of the equipment front end module 20 in a first direction 11. The load port 10 has a plurality of support parts 6. Each support part 6 is arranged in a row in a second direction 12, and a carrier 4 (e.g., cassette, FOUP, etc.) containing substrates (W) to be supplied to the process and substrates (W) after the process processing is completed is secured to it. The carrier 4 contains substrates (W) to be supplied to the process and substrates (W) after the process processing is completed. The transfer frame 21 is located between the load port 10 and the processing module 30. The transfer frame 21 includes a first transfer robot 25 located inside it that transfers substrates (W) between the load port 10 and the processing module 30. The first transfer robot 25 moves along a transfer rail 27 provided in a second direction 12 to transfer substrates (W) between the carrier 4 and the processing module 30.

[0039] The processing module 30 includes a load lock chamber 40, a transfer chamber 50, and a process chamber 60. The processing module 30 can receive substrates (W) returned from the equipment front end module 20 and process the substrates (W).

[0040] The load lock chamber 40 is positioned in contact with the transfer frame 21. For example, the load lock chamber 40 can be positioned between the transfer chamber 50 and the equipment front end module 20. The load lock chamber 40 provides a waiting space for substrates (W) to be supplied to the process before being transferred to the process chamber 60, or for substrates (W) that have completed the process before being transferred to the equipment front end module 20.

[0041] The transfer chamber 50 can return the substrate (W). The transfer chamber 50 is positioned in contact with the load lock chamber 40. When viewed from above, the transfer chamber 50 has a polygonal body. Referring to Figure 1, when viewed from above, the transfer chamber 50 has a pentagonal body. On the outside of the body, the load lock chamber 40 and several process chambers 60 are arranged around the body. Passages (not shown) for the substrate (W) to enter and exit are formed in each side wall of the body, and these passages connect the transfer chamber 50 to the load lock chamber 40 or the process chambers 60. Each passage is provided with a door (not shown) that opens and closes the passage to seal the interior. Inside the transfer chamber 50, a second transfer robot 53 is positioned between the load lock chamber 40 and the process chambers 60 to transfer the substrate (W). The second transfer robot 53 transfers unprocessed substrates (W) waiting in the load lock chamber 40 to the process chamber 60, or transfers processed substrates (W) to the load lock chamber 40. Then, it transfers the substrates (W) between the process chambers 60 to sequentially supply substrates (W) to multiple process chambers 60. As shown in Figure 1, when the transfer chamber 50 has a pentagonal body, load lock chambers 40 are arranged on the side walls adjacent to the front end module 20 of the equipment, and process chambers 60 are arranged in a series on the remaining side walls. The transfer chamber 50 can be provided in various forms depending on the required process module, not just the shape described above.

[0042] The process chamber 60 can be positioned in contact with the transfer chamber 50. The process chamber 60 is positioned along the perimeter of the transfer chamber 50. Multiple process chambers 60 can be provided. Process processing can be performed on the substrate (W) within each process chamber 60. The process chamber 60 receives the substrate (W) from the second transfer robot 53, performs the process processing, and provides the processed substrate (W) to the second transfer robot 53. The process processing carried out in each process chamber 60 may differ from that of the others.

[0043] Furthermore, the process chamber 60 is configured such that a substrate processing device 1000 is placed in the processing space to bevel-etch the edge region of the substrate.

[0044] The substrate processing apparatus 1000 uses plasma to perform predetermined processes on a substrate (W). For example, the substrate processing apparatus 1000 can etch or ash a film on the substrate (W). The film can be of various types, such as polysilicon, silicon oxide, and silicon nitride. The film can also be a native oxide film or a chemically generated oxide film. Furthermore, the film can be a by-product generated during the processing of the substrate (W). Additionally, the film can be an impurity adhering to and / or remaining on the substrate (W).

[0045] Furthermore, the substrate processing apparatus 1000 can perform plasma processing on the substrate (W). For example, the substrate processing apparatus 1000 can supply a process gas and generate plasma from the supplied process gas to process the substrate (W). The substrate processing apparatus 1000 can supply a process gas and generate plasma from the supplied process gas to process the edge region of the substrate (W).

[0046] As an example of a substrate processing apparatus 1000 for processing the edge region of a substrate (W), the substrate processing apparatus 1000 may include a housing 100, a support unit 300, an exhaust plate 400, a dielectric plate 500, an upper electrode unit 600, and a gas supply unit 700.

[0047] The housing 100 may have a processing space 102 inside. An opening (not shown) may be formed on one side of the housing 100. A substrate (W) can be brought into or out of the processing space 102 of the housing 100 through the opening formed in the housing 100. The opening can be opened and closed by an opening / closing member such as a door (not shown). When the opening of the housing 100 is opened and closed by the opening / closing member, the processing space 102 of the housing 100 can be isolated from the outside. Furthermore, the atmosphere of the processing space 102 of the housing 100 can be adjusted to a low pressure close to a vacuum after being isolated from the outside. In addition, an exhaust hole 104 may be formed on the bottom surface of the housing 100. Plasma (P) and / or gases (G1, G2) generated in the processing space 212 can be exhausted to the outside through the exhaust hole 104. Also, by-products generated in the process of processing the substrate (W) using plasma (P) can be exhausted to the outside through the exhaust hole 104. Furthermore, the exhaust hole 104 can be connected to an exhaust line (not shown). The exhaust line can be connected to a pressure reducing member that provides pressure reduction. The pressure reducing member can provide pressure reduction to the processing space 102 through the exhaust line.

[0048] The support unit 300 can support the substrate (W) in the processing space 102. The support unit 300 may include a chuck 310, a power supply member 320, an insulating ring 330, a lower electrode 350, and a drive member 370.

[0049] The chuck 310 may have a support surface for supporting the substrate (W). A heating means (not shown) may be provided inside the chuck 310. The heating means (not shown) can heat the chuck 310. The heating means may be a heater. A cooling channel 312 may also be formed in the chuck 310. The cooling channel 312 may be formed inside the chuck 310. A cooling fluid supply line 314 and a cooling fluid discharge line 316 may be connected to the cooling channel 312. The cooling fluid supply line 314 may be connected to a cooling fluid supply source 318. The cooling fluid supply source 318 can store and / or supply cooling fluid through the cooling fluid supply line 314. The cooling fluid supplied to the cooling channel 312 can be discharged to the outside through the cooling fluid discharge line 316. The cooling fluid stored and / or supplied by the cooling fluid supply source 318 may be cooling water or cooling gas. Furthermore, the shape of the cooling channel 312 formed in the chuck 310 is not limited to the illustrated shape, but can be varied in many ways. Also, the configuration for cooling the chuck 310 is not limited to a configuration that supplies a cooling fluid, but can be provided with various configurations that can cool the chuck 310 (for example, a cooling plate).

[0050] The power supply component 320 can supply power to the chuck 310. The power supply component 320 may include a power supply 322, an impedance matcher 324, and a power line 326. The power supply 322 may be a bias power supply. The power supply 322 may be connected to the chuck 310 via the power line 326. The impedance matcher 324 may also be supplied to the power line 326 to perform impedance matching. The power supplied by the power supply 322 can move the plasma generated in the processing space 102 toward the edge region of the substrate (W).

[0051] The insulating ring 330 can have a shape that surrounds the chuck 310 when viewed from above. The insulating ring 330 can be provided between the chuck 310 and the lower electrode 350, which will be described later. Since a bias power supply is provided to the chuck 310, the insulating ring 330 can be provided between the chuck 310 and the lower electrode 350, which will be described later. The insulating ring 330 can be made of an insulating material. Furthermore, insertion grooves 332, which will be provided later, can be formed in the insulating ring 330 into which insertion rings 800, which will be described later, can be inserted. A detailed description of the insulating ring 330 will be given later.

[0052] The lower electrode 350 can be positioned at the bottom of the edge region of the substrate (W) supported by the chuck 310. The lower electrode 350 can be provided so as to surround the insulating ring 330 when viewed from above. The lower electrode 350 can be positioned opposite the upper electrode 620, which will be described later. The lower electrode 350 can be positioned below the upper electrode 620, which will be described later. The lower electrode 350 can be grounded. The lower electrode 350 can increase the plasma density by inducing a coupling ring of the bias power supply applied to the chuck 310. This can improve the processing efficiency for the edge region of the substrate (W).

[0053] The drive member 370 can raise and lower the chuck 310. The drive member 370 may include a drive mechanism 372 and a shaft 374. The shaft 374 can be coupled to the chuck 310. The shaft 374 can be connected to the drive mechanism 372. The drive mechanism 372 can raise and lower the chuck 310 vertically via the shaft 374.

[0054] The exhaust plate 400 can regulate the airflow in the processing space 102. The exhaust plate 400 can be provided so as to surround the support unit 300 when viewed from above. The exhaust plate 400 can be provided between the housing 100 and the support unit 300 when viewed from above. The exhaust plate 400 can have a ring shape when viewed from above. At least one or more holes can be formed in the exhaust plate 400 through which gases (G1, G2), by-products, and plasma (P) in the processing space 102 can flow. The exhaust plate 400 can also be separated from either the housing 100 or the lower electrode 350.

[0055] The dielectric plate 500 can be positioned in the processing space 102 so as to face the substrate (W) supported by the support unit 300. The dielectric plate 500 can be positioned on top of the support unit 300. The dielectric plate 500 can be made of a material including ceramics. A first channel 502 can be formed in the dielectric plate 500, which is connected to the inactive gas supply section 710 of the gas supply unit 700 described later. The discharge end of the first channel 502 can be configured to supply the inactive gas (G1) to the central region of the substrate (W) supported by the support unit 300. The discharge end of the first channel 502 can also be configured to supply the inactive gas (G1) to the upper surface of the central region of the substrate (W) supported by the support unit 300.

[0056] The upper electrode unit 600 may include an upper body 610 and an upper electrode 620. The upper electrode 620 can face the lower electrode 350 described above. The upper electrode 620 can be positioned above the lower electrode 350. The upper electrode 620 can be positioned above the edge region of the substrate (W) supported by the chuck 310.

[0057] The upper electrode 620 can have a shape that surrounds the dielectric plate 500 when viewed from above. The upper electrode 620 can be coupled to the upper body 610 so as to be separated from the dielectric plate 500. The upper electrode 620 can be grounded. The upper electrode 620 can be electrically connected to the upper body 610. A gas channel 612 can be formed in the upper body 610. The gas channel 612 can be connected to the process gas supply unit 700, which will be described later. The gas channel 612 can also communicate with a second flow path 602 formed by separating the upper electrode 620 and the dielectric plate 500 from each other. The process gas (G2) supplied by the process gas supply unit 730 can be supplied to the substrate (W) through the gas channel 612 and the second flow path 602. Furthermore, the discharge end of the second flow path 602 can be configured so that the process gas (G2) supplied by the process gas supply unit 730 is supplied to the edge region of the substrate (W) supported by the support unit 300.

[0058] The gas supply unit 700 can supply gas to the processing space 102. The gas supply unit 700 can supply an inactive gas (G1) and a process gas (G2) to the processing space 102. The gas supply unit 700 may include an inactive gas supply section 710 and a process gas supply section 730.

[0059] The inactive gas supply unit 710 can supply inactive gas (G1) to the processing space 102. The inactive gas supply unit 710 may include an inactive gas supply source 712 and an inactive gas supply line 714. The inactive gas supply source 712 can store and / or supply inactive gas (G1) to the inactive gas supply line 714. The inactive gas supply line 714 may be connected to a first flow path 502. The inactive gas (G1) supplied by the inactive gas supply source 712 can be supplied to the central region of the upper surface of the substrate (W) through the first flow path 502. The inactive gas (G1) may be a gas containing argon, nitrogen, etc.

[0060] The process gas supply unit 730 can supply process gas (G2) to the processing space 102. The process gas supply unit 730 may include a process gas supply source 732 and a process gas supply line 734. The process gas supply source 732 can store and / or supply process gas (G2) to the process gas supply line 734. The process gas supply line 714 may be connected to a gas channel 612. The gas channel 612 is in communication with the second flow path 602 as described above. Thus, the process gas (G2) supplied by the process gas supply source 732 can be supplied to the upper edge region of the substrate (W) through the second flow path 602.

[0061] To explain how such a substrate processing apparatus 1000 performs a plasma process to bevel-etch the edges of a substrate (W), first, an inactive gas (G1) is supplied from the inactive gas supply unit 710 to the central region of the upper surface of the substrate (W). Simultaneously, a process gas (G2) is supplied from the process gas supply unit 730 to the upper edge region of the substrate (W). Power from the power supply 322 is supplied to the region between the upper electrode 620 and the lower electrode 350, causing plasma (P) to be generated in the region where the process gas (G2) is supplied. At this time, the generated plasma (P) may contain ions and / or radicals. In this case, the inactive gas is supplied to the central region of the substrate (W), preventing the process gas from penetrating the central region of the substrate (W). This prevents the central region of the substrate (W) from being etched when the edge region of the substrate (W) is etched. In other words, when an inactive gas is supplied to the central region of the substrate (W), the pressure in the central region of the substrate (W) becomes relatively higher than the pressure in the edge region of the substrate (W), causing the inactive gas to move from the central region to the edge region of the substrate (W). This gas flow prevents the process gas (G2) from penetrating the central region of the substrate (W), and thus the plasma processing efficiency for the edge region of the substrate (W) becomes higher.

[0062] As the substrate processing apparatus 1000 performs the plasma process, the edge region of the substrate is bevel-etched to form a bevel-etched region 3.

[0063] The inspection unit 70 is located in the load lock chamber 40. In this case, the inspection unit 70 receives the bevel-etched substrate (W) from the second transfer robot 53 that transports the substrate (W) and inspects the substrate (W). Here, the inspection unit 70 is exemplified as being located in the load lock chamber 40 so that inspection can be performed immediately after bevel etching, but the inspection unit 70 can also be located in the transfer chamber 50 to inspect the substrate (W), or it can be located outside the transfer frame 21 to inspect the substrate (W) that has been returned to the outside of the load port 10. In other words, the location of the inspection unit 70 in the present invention is not limited to the example described above, and can be implemented in various modified ways.

[0064] As an example of such an inspection unit 70, the inspection unit 70 can utilize a vision inspection device that captures images of the substrate (W) with a camera, acquires image information, and then processes the acquired image information using image processing to acquire the bevel etching region 3. Furthermore, as another example of the inspection unit 70, in addition to the method using a vision inspection device, the inspection unit 70 can utilize a method that acquires region information for the bevel etching region 3 as coordinate data using a position sensing sensor, laser sensor, infrared sensor, etc., that can sense the bevel etching region 3, and then analyzes the acquired data. In other words, the method by which the inspection unit 70 analyzes the bevel etching region 3 of the substrate (W) in the present invention is not limited to the above-described example, and it will be easily understood by those skilled in the art that various modified methods can be used to acquire and digitize the position information of the bevel etching region 3.

[0065] In this embodiment, for the sake of understanding, the inspection unit 70 will be described as using a vision inspection device when inspecting the substrate (W).

[0066] As a result, the inspection unit 70 acquires image information of the substrate (W), processes the acquired image information to distinguish and detect bevel etching regions 3 that have a different shape from the vicinity of the center of the substrate in terms of brightness, darkness, hue, and form. In this case, the inspection unit 70 detects an inner line 3a, which is made up of lines closest to the center of the substrate when the wide surface of the substrate is viewed on a plane, and an outer line 3b, which corresponds to the outer edge of the substrate. Here, the inner line 3a can be made up of a circle when the substrate (W) is bevel etched ideally, but depending on the substrate (W), an ellipse or a curve with many indentations and protrusions in a closed-roof form may be formed. At this time, the inspection unit 70 sets at least three coordinates in the inspection coordinates 2a of the inner line 3a of the bevel etching region 3 of the substrate (W), and calculates the center coordinate of the bevel etching region 3 by calculating the center coordinate of the circle passing through the set at least three inspection coordinates 2a using the center coordinate 2b of the inner line 3a of the bevel etching region 3.

[0067] Figure 5 is a flowchart of a substrate processing method according to one embodiment of the present invention.

[0068] Referring further to Figure 5, an example of a substrate processing method for calculating the center coordinates of the bevel etching region 3 can be described. The substrate processing method can be formed by including an etching region detection step (S10), an inspection coordinate setting step (S20), and a center coordinate calculation step (S30).

[0069] First, in the etching region detection stage (S10), as described above, the inspection unit 70 acquires image information of the substrate (W), and processes the acquired image information to distinguish and detect the bevel etching region 3, which has a different brightness and hue pattern from the vicinity of the center of the substrate.

[0070] Next, in the inspection coordinate setting stage (S20), the inspection unit 70 sets at least three inspection coordinates 2a on the inner line 3a of the bevel-etched area. At this time, at least three inspection coordinates 2a can be selected at positions arranged at regular intervals at a previously set angle relative to the center of the substrate (W). For example, if the inspection unit 70 sets four inspection coordinates 2a, the four set inspection coordinates 2a can be selected as points on the inner line 3a corresponding to 90 degrees, 180 degrees, and 270 degrees on the plane formed by the X and Y axes, assuming that the center of the substrate is +X-axis 0 degrees. In this case, the inspection coordinates 2a can be set by inputting the coordinates directly specified by the user, or they can be set automatically by a pre-set program. Here, if eight or more inspection coordinates 2a are selected as in the conventional method, the calculation time may increase. Therefore, to minimize the inspection time, three coordinates can be set, or to minimize the inspection time and increase accuracy, approximately four coordinates can be used. Furthermore, as illustrated in this embodiment, if the angle of the inspection coordinate 2a is not specified, the inspection accuracy may be uneven for each substrate (W). Therefore, it is desirable to set the angle to the specified angle as illustrated in this embodiment.

[0071] Next, in the center coordinate calculation stage (S30), as illustrated, once four inspection coordinates 2a are set, the inspection unit 70 inputs each of the four inspection coordinates 2a into the general form of the circle equation. At this time, the general form of the circle equation is on the plane formed by the X and Y axes. 2 +Y 2 This can be done using +AX+BY+C (where A, B, and C are unknowns). In this case, the unknowns can also be determined using three inspection coordinates 2a, but to improve the accuracy of the inspection, we will exemplify using four coordinates instead of three. Having determined the unknowns using these four inspection coordinates 2a, the inspection unit 70 uses the equation of a circle to calculate the center of the circle's equation as the center coordinate 2b of the bevel etching region 3. In this way, the inspection unit 70 can calculate the center coordinate of the bevel etching region 3 very easily.

[0072] Below, we will describe embodiments other than those mentioned above.

[0073] The following embodiments utilize the aforementioned substrate processing equipment 1 and substrate processing apparatus 1000 to perform substrate processing and bevel etching. To avoid obscuring the main points of the explanation, redundant configurations will be omitted, and only the essential aspects will be described.

[0074] Therefore, in order to adopt a more accurate method for determining the center coordinates of the bevel etching region 3 formed on the substrate (W) as described above, an analysis method for the inspection unit 70 according to the following other embodiment can be configured.

[0075] Referring further to Figure 6, Figure 6 is a plan view illustrating the screen of the inspection unit 70 of a substrate processing apparatus according to another embodiment of the present invention, which detects a bevel-etched substrate (W).

[0076] In this embodiment, the inspection unit 70 acquires image information of the substrate (W) using a vision inspection device, just as in the previously described embodiment. The difference from the previously described embodiment is that the analysis method of the inspection unit 70 is carried out in a different manner than in the previously described embodiment.

[0077] More specifically, in a substrate processing apparatus according to another embodiment of the present invention, the inspection unit 70, which has acquired image information of a substrate on which a bevel etching region 3 is formed, detects an inner line 3a formed by the lines closest to the center of the substrate and an outer line 3b corresponding to the outer edge of the substrate when the bevel etching region 3 is viewed on a flat plane across a wide surface of the substrate. Next, the inspection unit 70 sets at least three coordinates on the inner line 3a of the bevel etching region 3 of the substrate as inspection coordinates 7a and sets them as the first group 4a. Next, the inspection unit 70 sets at least three coordinates on the inner line 3a of the bevel etched region of the substrate as inspection coordinates 7b, but sets the inspection coordinates 7b at a position different from the inspection coordinates 7a set as the first group 4a and sets them as the second group 4b. At this time, the inspection unit 70 calculates the center coordinates of the circle passing through the inspection coordinates 7a of the first group 4a using the first center coordinate 5a of the bevel etching region 3, and calculates the center coordinates of the circle passing through the inspection coordinates 7b of the second group 4b using the second center coordinate 5b of the bevel etching region 3. Next, the inspection unit 70 calculates the average value of the first center coordinate 5a and the second center coordinate 5a using the center coordinate 6a of the bevel etching region 3, making it very easy to calculate the center coordinate 6a of the bevel etching region 3, and enabling the calculation of the center coordinate 6a of the bevel etching region 3 with higher accuracy than in the previously described embodiment.

[0078] Continuing the explanation of the substrate processing method of the substrate processing apparatus according to the other embodiments described above, Figure 7 is a flowchart of the substrate processing method according to another embodiment of the present invention.

[0079] Referring further to Figure 7, another embodiment of the present invention includes an etching region detection step (S10), an inspection coordinate setting step (S50), and a center coordinate calculation step (S60).

[0080] First, the etching region detection step (S10) proceeds in the same manner as in the previously described embodiment, and a redundant explanation of this step will be omitted.

[0081] Next, the inspection coordinate setting stage (S50) includes the first group setting stage (S51) and the second group setting stage (S52).

[0082] First, in the first group setting stage (S51), the inspection unit 70 sets at least three coordinates of the eight points on the inner line 3a of the bevel-etched area of ​​the substrate as inspection coordinates 7a, thereby setting the first group 4a. In this embodiment, four inspection coordinates 7a are set in the first group setting stage (S51). In this case, the four inspection coordinates 7a are set at a previously set angle between the inspection coordinates 2a so that they are arranged at a 90-degree angle to each other, in order to ensure that the inspection proceeds at the same position for each substrate (W) being inspected, as described above.

[0083] Next, in the second group setting stage (S52), the inspection unit 70 sets four other inspection coordinates 7b from among the eight points on the inner line 3a of the bevel etching region 3 so that they do not overlap with the four inspection coordinates 7a selected in the first group 4a. At this time, the other four inspection coordinates 7b proceed while maintaining the previously set angles between them, as described above.

[0084] Next, the center coordinate calculation stage (S60) proceeds, including the first group center coordinate calculation stage (S61), the second group center coordinate calculation stage (S62), and the center coordinate averaging stage (S63).

[0085] First, in the first group center coordinate calculation stage (S61), the inspection unit 70 calculates the center coordinates of the circle passing through the inspection coordinates 7a set in the first group 4a using the first center coordinates 5a of the bevel etching region 3. Here, the center coordinates of the circle can be calculated by finding the unknowns in the equation of the circle, as illustrated in the embodiment described above.

[0086] Next, in the second group center coordinate calculation stage (S62), the inspection unit 70 calculates the center coordinates of the circle passing through the inspection coordinates 7b of the second group 4b, which is the second center coordinate 5b of the bevel etching region 3. The center coordinates of such a circle can also be calculated by finding the unknowns in the circle equation mentioned above.

[0087] Next, in the central coordinate averaging stage (S63), the inspection unit 70 calculates the average value of the first central coordinate 5a and the second central coordinate 5b using the central coordinate 6a of the bevel etching region 3. Here, the average value of the central coordinates of the bevel etching region 3 is calculated using the X-axis average value of the X-axis of the first central coordinate 5a and the X-axis value of the second central coordinate 5b, and the average value of the Y-axis of the first central coordinate 5a and the Y-axis value of the second central coordinate 5b, on a plane based on the X and Y axes.

[0088] Therefore, the center coordinates 6a with respect to the inner line 3a of the bevel etching region 3 can be calculated very easily, and the center coordinates of the bevel etching region 3 can be calculated with a higher accuracy than in the previously described embodiment.

[0089] Alternatively, to calculate the center coordinates of the inner line 3a of the bevel etching region 3 with even greater accuracy than the embodiments described above, another embodiment of the present invention can be carried out as follows.

[0090] Referring to Figure 8, Figure 8 is a plan view illustrating the screen of the inspection unit 70 of a substrate processing apparatus according to another embodiment of the present invention, which detects a bevel-etched substrate (W). In Figure 8, the bevel-etched region 3 formed on the substrate (W) is shown in a somewhat exaggerated form to facilitate understanding of this embodiment.

[0091] In another embodiment of the present invention, the substrate processing apparatus has an inspection unit 70 that sets at least four or more coordinates in the bevel etching region 3 as inspection coordinates 8a, combines the four or more inspection coordinates 8a with three intermediate inspection coordinates 8a to generate a plurality of circles 9a, and calculates the average value of the center coordinates 9b for each of the plurality of circles 9a as the center coordinate 9c of the bevel etching region 3.

[0092] To explain this in more detail, we will further describe a substrate processing method according to another embodiment of the present invention.

[0093] Figure 9 is a flowchart of a substrate processing method according to another embodiment of the present invention.

[0094] Referring further to Figure 9, another embodiment of the present invention provides a substrate processing method that includes an etching area detection step (S10), an inspection coordinate setting step (S70), and a center coordinate calculation step (S80).

[0095] First, the etching region detection step (S10) is the same as in the previously described embodiment, so we will omit any redundant explanation of it.

[0096] Next, the inspection coordinate setting stage (S70) includes the inspection coordinate specification stage (S71) and the inspection coordinate combination stage (S72).

[0097] First, in the inspection coordinate specification stage (S71), the inspection unit 70 sets at least four coordinates as inspection coordinates 8a on the inner line 3a of the bevel etching region 3. In this embodiment, the inspection coordinate specification stage (S71) is illustrated by setting four inspection coordinates 8a arranged at a previously set angle, similar to the inspection coordinate setting method described above.

[0098] Next, in the inspection coordinate combination stage (S72), the inspection unit 70 combines three of the four inspection coordinates 8a set in the previous stage.

[0099] Next, the center coordinate calculation stage (S80) proceeds including the circle generation stage (S81), the circle center calculation stage (S82), and the center coordinate averaging stage (S83).

[0100] First, in the circle generation stage (S81), the inspection unit 70 generates circles 9a for each of the four combinations generated in the inspection coordinate combination stage (S72). Here, the circle generation method can be set by finding the unknowns using the equation of a circle passing through three points, as described above. Here, in the circle generation stage (S81), as described above, the total number of combinations will be four. Then, since the number of combinations generated by selecting three inspection coordinates 8a from the four inspection coordinates 8a is 4C3, a combination formula, a total of four multiple circles 9a are created. Of course, the number of combinations of multiple circles 9a can be changed by increasing the number of inspection coordinates 8a, and in this embodiment, for the sake of understanding, we will use four to represent the inspection coordinates 8a as an example.

[0101] Next, in the circle center calculation stage (S82), the inspection unit 70 calculates the center coordinates 9b for each of the four circles 9a generated in the previous stage from the equation of the circle. Here, the equation of the circle can be calculated using the method of finding the unknown variables as described above.

[0102] Next, in the center coordinate averaging stage (S83), the inspection unit 70 averages the center coordinates 9b of each of the four circles 9a to calculate the center coordinate 9c for the inner line 3a of the bevel etching region 3. Here, the average value of the center coordinates 9b of each of the four circles 9a is calculated by calculating the X-axis average value of the center coordinates 9b for each of the four circles on a plane based on the X and Y axes, and then calculating the Y-axis average value of the center coordinates 9b for each of the four circles, thereby setting the center coordinate 9c for the inner line 3a using the X-axis average value and the Y-axis average value.

[0103] Therefore, the center coordinates 9c of the bevel etching region 3 relative to the inner line 3a can be calculated very easily by setting just four points, and the center coordinates 9c of the bevel etching region 3 can be calculated with a higher accuracy than in the previously described embodiment.

Claims

1. In a substrate processing apparatus for inspecting a substrate in which a bevel etching region is formed on the edge, A substrate processing apparatus comprising: an inspection unit that sets at least three coordinates in a bevel-etched region of the substrate using inspection coordinates, and calculates the center coordinates of a circle passing through the set at least three inspection coordinates using the center coordinates of the bevel-etched region.

2. The substrate processing apparatus according to claim 1, wherein the three or more inspection coordinates are input into the equation of a circle to calculate the unknown, and the center of the equation of the circle containing the unknown is calculated using the center coordinates of the bevel etching region.

3. The aforementioned inspection unit is The substrate processing apparatus according to claim 1, wherein when the bevel etching region is viewed on a flat plane across a wide surface of the substrate, an inner line formed by the line closest to the center of the substrate and an outer line corresponding to the outer edge of the substrate are detected, and the inspection coordinates are set on the inner line.

4. The inspection unit sets at least three coordinates as inspection coordinates in the bevel-etched region of the substrate and sets them as a first group, and sets at least three coordinates as inspection coordinates in the bevel-etched region of the substrate, but sets inspection coordinates at positions different from the inspection coordinates set as the first group and sets them as a second group. The inspection unit calculates the first center coordinate of the bevel etching region by determining the center coordinate of a circle passing through the inspection coordinates of the first group, and calculates the second center coordinate of the bevel etching region by determining the center coordinate of a circle passing through the inspection coordinates of the second group. The substrate processing apparatus according to claim 1, wherein the inspection unit calculates the average of the first and second central coordinates using the central coordinates of the bevel etching region.

5. The aforementioned inspection unit is The substrate processing apparatus according to claim 4, wherein when selecting the inspection coordinates of the first group and the inspection coordinates of the second group, the selection is made at positions arranged at a predetermined angle with respect to the center of the substrate.

6. The present invention further includes a bevel etching portion which is formed by bevel etching the edge of the substrate, The bevel etching portion is Housing with processing space, A support unit arranged in the processing space and used by the lower electrode to support the substrate, An upper electrode unit positioned opposite the support unit, A gas supply unit that supplies an inactive gas to the central region of the substrate and a process gas to the edge region of the substrate, A power supply that supplies power to the upper electrode unit and the support unit to form plasma in the edge region of the substrate to which the process gas is supplied, so that a bevel etching region is formed on the substrate. A substrate processing apparatus according to claim 1, including the following:

7. In the inspection section, an etching area detection stage is performed to detect the bevel etching area of ​​the substrate. An inspection coordinate setting step in which at least three or more inspection coordinates are detected in the bevel etching region, and The inspection unit sets at least three coordinates as inspection coordinates in the bevel-etched region of the substrate, and calculates the center coordinates of the bevel-etched region by determining the center coordinates of a circle that passes through the set at least three inspection coordinates. A substrate processing method including the following.

8. In the aforementioned center coordinate calculation stage, The substrate processing apparatus according to claim 7, wherein the three or more inspection coordinates are input into the equation of a circle to calculate the unknown, and the center of the equation of the circle containing the unknown is calculated using the center coordinates of the bevel etching region.

9. In the aforementioned center coordinate calculation stage, The substrate processing method according to claim 7, wherein the inspection unit detects an inner line formed by the line closest to the center of the substrate and an outer line corresponding to the outer edge of the substrate when the bevel etching region is viewed on a flat plane of the wide surface of the substrate, and sets the inspection coordinates on the inner line.

10. In the aforementioned center coordinate calculation stage, The inspection unit sets at least three coordinates as inspection coordinates in the bevel-etched region of the substrate and sets them as a first group, and sets at least three coordinates as inspection coordinates in the bevel-etched region of the substrate, but sets inspection coordinates at positions different from the inspection coordinates set as the first group and sets them as a second group. The inspection unit calculates the first center coordinate of the bevel etching region by determining the center coordinate of a circle passing through the inspection coordinates of the first group, and calculates the second center coordinate of the bevel etching region by determining the center coordinate of a circle passing through the inspection coordinates of the second group. The substrate processing method according to claim 7, wherein the inspection unit calculates the average value of the first center coordinates and the second center coordinates using the center coordinates of the bevel etching region.

11. In the aforementioned center coordinate calculation stage, The substrate inspection method according to claim 10, wherein when the inspection unit selects the inspection coordinates of the first group and the inspection coordinates of the second group, it selects them at positions arranged at a fixed interval at a predetermined angle with respect to the center of the substrate.

12. In a substrate processing apparatus for inspecting a substrate in which a bevel etching region is formed on the edge, The substrate processing apparatus according to claim 1, comprising: an inspection unit that sets at least four or more coordinates as inspection coordinates in the bevel etching region, generates multiple circles by combining the four or more inspection coordinates with three intermediate inspection coordinates, and calculates the average value of the center coordinates for each of the multiple circles using the center coordinates of the bevel etching region.

13. The aforementioned inspection unit is The substrate processing apparatus according to claim 12, wherein when generating the multiple circles, three inspection coordinates passing through each of the multiple circles are input into the equation of the circle to calculate the unknown, and the center of the equation of the circle containing the unknown is calculated using the center coordinates of each of the multiple circles.

14. The aforementioned inspection unit is The substrate processing apparatus according to claim 12, wherein when the bevel etching region is viewed on a flat plane across a wide surface of the substrate, an inner line formed by the line closest to the center of the substrate and an outer line corresponding to the outer edge of the substrate are detected, and the inspection coordinates are set on the inner line.

15. The substrate processing apparatus according to claim 12, wherein when the inspection unit selects the four or more inspection coordinates, it selects them at positions arranged at a fixed interval at a predetermined angle with respect to the center of the substrate.

16. The present invention further includes a bevel etching portion which is formed by bevel etching the edge of the substrate, The bevel etching portion is Housing with processing space, A support unit arranged in the processing space and used by the lower electrode to support the substrate, An upper electrode unit positioned opposite the support unit, A gas supply unit that supplies an inactive gas to the central region of the substrate and a process gas to the edge region of the substrate, The substrate processing apparatus according to claim 12, comprising a power supply that supplies power to the upper electrode unit and the support unit to form plasma in the edge region of the substrate to which the process gas is supplied, so that a bevel etching region is formed on the substrate.

17. In the inspection section, an etching area detection stage is performed to detect the bevel etching area of ​​the substrate. An inspection coordinate setting step in which at least four or more inspection coordinates are detected in the bevel etching region, and The inspection unit sets at least four or more coordinates in the bevel etching region as inspection coordinates, combines the four or more inspection coordinates with three intermediate inspection coordinates to generate multiple circles, and calculates the average value of the center coordinates for each of the multiple circles using the center coordinates of the bevel etching region in the center coordinate calculation step. A substrate processing method including the following.

18. In the aforementioned center coordinate calculation stage, The substrate processing method according to claim 17, wherein the inspection unit detects an inner line formed by the line closest to the center of the substrate and an outer line corresponding to the outer edge of the substrate when the bevel etching region is viewed on a flat plane of the wide surface of the substrate, and sets the inspection coordinates on the inner line.

19. In the aforementioned center coordinate calculation stage, The substrate processing method according to claim 17, wherein when the inspection unit selects the four or more inspection coordinates, it selects them at positions arranged at a fixed interval at a predetermined angle with respect to the center of the substrate.

20. In the aforementioned center coordinate calculation stage, The substrate processing method according to claim 17, wherein when generating the multiple circles, three inspection coordinates passing through each of the multiple circles are input into the circle equation to calculate the unknown, and the center of the circle equation containing the unknown is calculated using the center coordinates of each of the multiple circles.

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