Phosphors, methods for producing phosphors, uses of phosphors, and optoelectronic components

Abstract

The present invention relates to a lumophore (1) having a sum formula Li 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c :E (where 0 ≦ x ≦ 4, 0 ≦ c ≦ 1, 0 ≦ z ≦ 4, 0 ≦ a ≦ 8, 0 ≦ b ≦ 4, 0 ≦ 2x + a ≦ 8, 0 ≦ z + b ≦ 4, -4 ≦ -z + b - c ≦ 4). The present invention also relates to a method for producing a lumophore, the use of the lumophore, and optoelectronic components.

Description

Technical Field

[0001] A phosphor, a method for producing a phosphor, use of the phosphor, and an optoelectronic component are described.

[0002] In particular, it is an object to provide an improved phosphor. Further, an efficient method for producing a phosphor is also provided. Use of the phosphor and an efficient optoelectronic component using the phosphor are also provided respectively.

Background Art

[0003] *****

Summary of the Invention

[0004] *****

Mode for Carrying Out the Invention

[0005] The phosphor is described. The phosphor can be uncharged with respect to the outside. This means that there can be a complete charge balance between positive and negative charges in the phosphor. On the other hand, there may be a case where the phosphor is formally slightly lacking in complete charge balance.

[0006] In a specified composition or molecular formula, the phosphor may contain further elements, for example, in the form of impurities. The total amount of impurities is at most 1 part per mille, particularly at most 100 ppm (parts per million), for example at most 10 ppm. In particular, these impurities are present in the phosphor at a ratio of at most 5 mol%, particularly at most 1 mol%, for example at most 0.1 mol%.

[0007] In this section and thereafter, phosphors will be described using their composition or molecular formula. The elements listed in the composition or molecular formula exist in an charged form. Therefore, in this section and thereafter, with respect to the composition or molecular formula of a phosphor, elements and / or atoms, even if not explicitly stated, refer to ions in the form of cations and anions. This also applies to element symbols, where charge numbers are omitted for clarity.

[0008] According to at least one embodiment, the phosphor comprises an element or combination of elements selected from the group of monovalent elements.

[0009] The term "valence" for a particular element refers to the number of elements with a single opposite charge required to achieve charge equilibrium in a chemical compound. Therefore, the term "valence" includes the number of charges of an element.

[0010] Elements with a valence of 1 are called monovalent elements. Monovalent elements often have a single positive charge in chemical compounds, with a charge number of +1. Charge equilibrium in chemical compounds can occur, for example, due to another element with a single negative charge. Monovalent elements are generally selected from the group formed by alkali elements and subgroup elements.

[0011] According to at least one embodiment, the phosphor comprises an element or combination of elements selected from the group of trivalent elements.

[0012] Elements with a valence of 3 are called trivalent elements. Trivalent elements often have three positive charges in a chemical compound, resulting in a charge number of +3. Charge equilibrium in a chemical compound can occur, for example, with three other elements, each having a single negative charge, or with another element having three negative charges. Trivalent elements are generally selected from the group formed by subgroup elements, especially rare earth elements, and the elements of the third main group. In this section and thereafter, rare earth elements are understood to be the following elements: Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu.

[0013] According to at least one embodiment, the phosphor comprises an element or combination of elements selected from the group of trivalent elements.

[0014] Elements with a valency of 4 are called tetravalent elements. Tetravalent elements often have four positive charges in chemical compounds, resulting in a charge number of +4. Charge equilibrium in a chemical compound can occur, for example, with four other elements, each having a single negative charge, or with two other elements, each having two negative charges. Tetravalent elements are generally selected from the group formed by the elements of Group 4 and its subgroups.

[0015] According to at least one embodiment, the phosphor comprises oxygen and / or nitrogen. In particular, oxygen has two negative charges. In particular, nitrogen has three negative charges. Oxygen and / or nitrogen are used, for example, for charge equilibrium of monovalent, trivalent, and tetravalent elements.

[0016] According to at least one embodiment, the phosphor comprises an activating element E. The phosphor may also comprise a combination of activating elements. Generally, the phosphor comprises a host structure into which a different element is introduced as an activating element. The activating element can absorb electromagnetic radiation of an excitation wavelength. Simultaneously, the electronic structure of the activating element can be altered by the host structure. After absorption of electromagnetic radiation of an excitation wavelength, an electronic transition is excited in the phosphor, e.g., the activating element or the host structure. The phosphor returns to its ground state by emitting electromagnetic radiation having an emission spectrum.

[0017] According to at least one embodiment, the phosphor comprises an element or combination of elements selected from the group of monovalent elements, an element or combination of elements selected from the group of trivalent elements, an element or combination of elements selected from the group of tetravalent elements, oxygen and / or nitrogen, and an activating element E.

[0018] According to at least one embodiment, the phosphor comprises an element or combination of elements selected from the group of divalent elements.

[0019] Elements with a valence of 2 are called divalent elements. Divalent elements often have two positive charges in chemical compounds, and the charge number is +2. Charge balance in chemical compounds can occur, for example, by two other elements each having a single negative charge or another element having two negative charges. In this case, divalent elements are generally selected from the group formed by alkaline earth elements and elements of a subgroup.

[0020] According to at least one embodiment, the phosphor contains an element or combination of elements selected from the group of pentavalent elements.

[0021] Elements with a valence of 5 are called pentavalent elements. In chemical compounds, pentavalent elements often have five positive charges in the chemical compound, and the charge number is +5. Charge balance in chemical compounds can occur, for example, by five other elements each having a single negative charge, or a further element having two negative charges and a further element having three negative charges. In this case, pentavalent elements are generally selected from the group formed by elements of Group 5 and elements of a subgroup.

[0022] According to at least one embodiment, the phosphor has the molecular formula Li 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c :E. All descriptions regarding the phosphor described by the molecular formula also apply to the phosphor described only by the composition, and vice versa. The square brackets indicate that, in particular, MA, MD, ME, MG, N, and O form the backbone in the host structure of the phosphor. For example, MA, MD, ME, and MG are scaffold formers. For example, Li, MB, MF, MC, and E are arranged between the structural basic units that form the backbone in, for example, gaps or channels.

[0023] According to at least one embodiment of the phosphor, 0 ≤ x ≤ 4 holds. According to at least one embodiment of the phosphor, 0 ≤ c ≤ 1 holds. According to at least one embodiment of the phosphor, 0 ≤ z ≤ 4 holds. According to at least one embodiment of the phosphor, 0 ≤ a ≤ 8 holds. According to at least one embodiment of the phosphor, 0 ≤ b ≤ 4 holds.

[0024] According to at least one embodiment of the phosphor, 0 ≤ 2x + a ≤ 8 holds. According to at least one embodiment of the phosphor, 0 ≤ z + b ≤ 4 holds. According to at least one embodiment of the phosphor, -4 ≤ -z + bc ≤ 4 holds.

[0025] According to at least one embodiment of the phosphor, MB is an element or combination of elements selected from the group of divalent elements.

[0026] According to at least one embodiment of the phosphor, MC is an element or combination of elements selected from the group of trivalent elements. In particular, MC is an element or combination of elements selected from the group of rare earth elements. For example, the rare earth elements in the phosphor have a charge number of +3.

[0027] According to at least one embodiment of the phosphor, MA is Li and / or Na.

[0028] According to at least one embodiment of the phosphor, MD is an element or combination of elements selected from the group of tetravalent elements.

[0029] According to at least one embodiment of the phosphor, ME is an element or combination of elements selected from the group of trivalent elements. In particular, ME and MC are different. However, ME and MC may be the same.

[0030] According to at least one embodiment of the phosphor, MF is an element or combination of elements selected from the group of monovalent elements. In particular, MF and MA are different. However, MF and MA may be the same.

[0031] According to at least one embodiment of the phosphor, MG is an element or combination of elements selected from the group of pentavalent elements.

[0032] According to at least one embodiment of the phosphor, E is an activating element. It is also possible that E is a combination of activating elements.

[0033] According to at least one embodiment, the phosphor has the following molecular formula. Li 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c ]:E (In the formula, 0≦x≦4, 0≦c≦1, 0≦z≦4, 0≦a≦8, 0≦b≦4, 0≦2x+a≦8, 0≦z+b≦4, -4≦-z+bc≦4, MB is an element or combination of elements selected from the group of divalent elements, MC is an element or combination of elements selected from the group of trivalent elements, MA is Li and / or Na, MD is an element or combination of elements selected from the group of tetravalent elements, ME is an element or combination of elements selected from the group of trivalent elements, MF is an element or combination of elements selected from the group of monovalent elements, MG is an element or combination of elements selected from the group of pentavalent elements, and E is the activating element.)

[0034] The phosphors described herein have been shown to be advantageously hydrolytically stable despite the presence of Li. Furthermore, the luminescence properties of the phosphors may be influenced by the selection of constituent elements and the precise composition. Therefore, it is advantageous that the phosphors can be adapted to desired applications.

[0035] According to at least one embodiment of the phosphor, MB is an element or combination of elements selected from the following group: Be, Mg, Ca, Sr, Ba, Zn.

[0036] According to at least one embodiment of the phosphor, the MC is an element or combination of elements selected from the following group: Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu. In other words, the MC is an element or combination of elements selected from the group of rare earth elements. In particular, the sizes of the elements Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Y are between those of Lu and La. Thus, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Y can occupy equivalent positions in the host structure to Lu and La. Here, size corresponds particularly to ionic radius.

[0037] According to at least one embodiment of the phosphor, MC is an element or combination of elements selected from the following group: Gd, Dy, Ho, Pr, Nd, Y, Tb, Er, Tm, Yb, Sm, Lu.

[0038] In particular, MC contributes to the luminescence properties of phosphors. In other words, at least a portion of the electromagnetic radiation emitted by phosphors may be due to electronic transitions in MC. For example, the electronic transition is an f→f transition. An f→f transition can be excited directly or by a sensitizer. For example, a 4f→4f transition is Ho 3+ , Pr 3+ , Tb 3+ Er 3+ , Tm 3+ Sm 3+ and Nd 3+ It can be excited in this context.

[0039] According to at least one embodiment of the phosphor, MD is an element or combination of elements selected from the following group: Si, Ge, Sn, Pb, Ti, Zr, Hf.

[0040] According to at least one embodiment of the phosphor, ME is an element or combination of elements selected from the following group: B, Al, Ga, In, Sc, Cr.

[0041] According to at least one embodiment of the phosphor, MF is an element or combination of elements selected from the following group: Na, K, Rb, Cs, Au, Cu, Pt, Ag.

[0042] According to at least one embodiment of the phosphor, MG is an element or combination of elements selected from the following group: V, Nb, Ta, P, As, Sb.

[0043] According to at least one embodiment of the phosphor, E is an element or combination of elements selected from the following group: Eu, Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Tm, Yb, Mn, Cr, Ni, Bi, Cu, Ag, Ti, U. In particular, E is Ce and / or Eu. For example, the phosphor contains two or more activating elements E.

[0044] In particular, Eu is Eu 2+ or Eu 3+ It exists in the form of Ce. 3+ It exists in the form of Pr. In particular, Pr 3+ It exists in the form of Nd. In particular, Nd 3+ It exists in the form of Sm. In particular, Sm is Sm 3+ It exists in the form of Tb. In particular, Tb 3+ It exists in form. In particular, Dy is Dy 3+ It exists in the form of Ho. In particular, Ho 3+ It exists in the form of Er 3+ It exists in the form of Tm. In particular, Tm is Tm 3+ It exists in the form of Yb. In particular, Yb 3+ or Yb 2+ It exists in the form of Mn. In particular, Mn 2+ or Mn 4+ It exists in the form of Cr. In particular, Cr 3+ It exists in the form of Ni. In particular, nickel is Ni 2+ It exists in the form of Bi. In particular, Bi 3+ It exists in the form of Cu. In particular, Cu is Cu + or Cu 2+ It exists in the form of Ag. In particular, Ag +It exists in the form of Ti. 3+ or Ti 4+ It exists in the form of U. In particular, U is U 6+ It exists in this form.

[0045] For example, the transition from d to d is Mn 2+ Mn 4+ and Cr 3+ It is excited in Eu 2+ and Ce 3+ In this case, for example, an f→d transition or a d→f transition is excited. For example, the 5d→4f transition is Ce 3+ It occurs in [location].

[0046] Ce as the activating element 3+ In phosphors containing this compound, only a slight quenching effect is observed even at high irradiation levels. For example, molecular formula Y3Al5O 12 :Ce 3+ A phosphor having 1 W / mm 2 Only at irradiances exceeding 10 W / mm², especially 10 W / mm². 2 It exhibits clearly significant intensity quenching only at irradiances exceeding a certain level. This is due to the short lifetime of Ce. 3+ This is due to the excited state of Ce. 3+ The typical lifetime of the excited state is, for example, less than 100 nanoseconds.

[0047] According to at least one embodiment of the phosphor, the activating element acts as a sensitizer. When the activating element acts as a sensitizer, at least a portion of the energy absorbed by the activating element becomes available to the activating element when excited, for example by electromagnetic radiation, and is transferred to another component in the phosphor, such as MC. This results in, for example, a redshift and / or additional emission peaks of the electromagnetic radiation emitted by the phosphor. For example, the activating element transfers at least 1%, at least 10%, at least 50%, at least 75%, or at least 90% of the absorbed energy. For example, Ce as the activating element E. 3+It can also act as a sensitizer for MC and / or E, which are Nd, Ho, Tb, Tm, Er, Sm, and Pr. For example, in MC and / or E, which are Nd, Ho, Tb, Tm, Er, Sm, and Pr, an f→f transition is excited after energy transfer.

[0048] In particular, the emission spectrum of a phosphor containing a sensitizer as an activating element may have multiple emission peaks. In this case, each emission peak can be assigned to the activating element and other components of the phosphor, such as MC. If the activating element E includes a combination of elements, it is also possible to assign each emission peak to a different activating element.

[0049] According to at least one embodiment, the activating element E is present in proportions of 0.01 mol% to 10 mol% (including both ends), particularly 0.1 mol% to 5 mol% (including both ends), based on the sum of MC and MB. In particular, when MC is Nd, Yb, Lu, Er, or Tm, the activating element E may be present in proportions of up to 15 mol% of the sum of MC and MB.

[0050] According to at least one embodiment, x=0 is true.

[0051] According to at least one embodiment, c=0 is true.

[0052] According to at least one embodiment, a=0 is true.

[0053] According to at least one embodiment, b=0 is true.

[0054] According to at least one embodiment, z=0 is true.

[0055] According to at least one embodiment, the phosphor has the molecular formula Li8MC[MAMD4N4O8]:E. In particular, the phosphor has the molecular formula Li8MC[LiSi4N4O8]:E or Li9MCSi4N4O8:E. In the case of the molecular formula Li9MCSi4N4O8:E, the individual components are classified according to their type, but the molecular formula Li8MC[LiSi4N4O8]:E represents the host structure of the compound. For example, square brackets indicate that Li, Si, N, and O form the backbone in the host structure of the phosphor. In this section and hereafter, the backbone is understood to mean the anionic substructure of the host structure of the phosphor. The backbone may have a three-dimensional structure and / or a layered structure. In particular, MC is selected from the group formed by rare earth elements, such as Gd, Y, Pr, Nd, Ho, Tb, Tm, Er, Lu, Yb, Sm, and Dy, and combinations thereof.

[0056] According to at least one embodiment of the phosphor, the molar ratio of MC to the sum of MA, MD, ME, and MG is less than 3:5. In other words, the ratio of MC to the backbone-forming agent is less than 3:5 (MC:backbone-forming agent). For this reason, in particular, the ratio of rare earth elements to backbone-forming agents in this phosphor is less than 3:5. For example, the phosphor having the molecular formula Li8MC[LiSi4N4O8]:E has an MC to backbone-forming agent ratio of 1:5.

[0057] Garnet RE3(Al,Ga)5O 12 :E (where RE is a rare earth element) has a ratio of 3:5 between the rare earth element and the skeletal structure-forming agent. Rare earth elements are particularly expensive compared to the skeletal structure-forming agent. Therefore, using this phosphor, a less expensive phosphor can be advantageously provided.

[0058] According to at least one embodiment of the phosphor, the mass fraction of MC with respect to the total mass of the phosphor is less than 59%, particularly less than 45%, for example, between 20% and 33% (including both ends). In particular, the mass fraction of rare earth elements in the phosphor with respect to the total mass of the phosphor is less than 59%. For example, a phosphor in which MC is Gd or Dy has a mass fraction of MC of 31% with respect to the total mass of the phosphor. A phosphor in which MC is Ho or Tm may have a mass fraction of MC of 32% with respect to the total mass of the phosphor. For example, a phosphor in which MC is Pr has a mass fraction of MC of 28% with respect to the total mass of the phosphor, and a phosphor in which MC is Y has a mass fraction of MC of 20% with respect to the total mass of the phosphor. A phosphor in which MC is Tb has a mass fraction of MC of 30.7% with respect to the total mass of the phosphor. A phosphor in which MC is Lu or Yb has a mass fraction of MC of 33% with respect to the total mass of the phosphor. A phosphor in which MC is Sm has a mass fraction of MC of 30% of the total mass of the phosphor.

[0059] Garnet RE3Al5O 12 :E (where RE is a rare earth element) has a mass fraction of at least 45% of the total mass of the phosphor. For example, Gd3Al5O 12 :E has a mass fraction of rare earth elements of 59% of the total mass of the phosphor. For example, Dy3Al5O 12 :E and possible Ho3Al5O 12 :E is a phosphor in which the mass fraction of rare earth elements relative to the total mass is at least 60% or about 60%, and Lu3Al5O 12 :E is approximately 62%. Pr3Al5O 12 :E has a mass fraction of rare earth elements of 56% of the total mass of the phosphor. Y3Al5O 12 :E has a mass fraction of rare earth elements of 45% of the total mass of the phosphor. Possible Tm3Al5O 12 and Yb3Al5O 12 It has a mass fraction of rare earth elements of 61% of the total mass of the phosphor, and is possible Tb3Al5O 12 It has a mass fraction of 59.3%. Possible Sm3Al5O 12 It has a mass fraction of rare earth elements of 58% of the total mass of the phosphor.

[0060] According to at least one embodiment, the phosphor emits electromagnetic radiation having an emission spectrum after being excited by electromagnetic radiation of an excitation wavelength. In particular, the excitation wavelength is shorter than the wavelength of the electromagnetic radiation emitted by the phosphor.

[0061] The emission spectrum is the distribution of electromagnetic radiation emitted by a phosphor after excitation by electromagnetic radiation of the excitation wavelength. For example, the emission spectrum is shown in the form of a graph that shows the spectral intensity or spectral radiant flux ("spectral intensity / spectral radiant flux") per wavelength interval of electromagnetic radiation emitted by the phosphor as a function of wavelength λ. In other words, the emission spectrum can be represented as a curve in an x / y graph where wavelength is plotted on the x-axis and spectral intensity or spectral radiant flux is plotted on the y-axis.

[0062] According to at least one embodiment, the phosphor is excited by electromagnetic radiation in the ultraviolet to blue range of the electromagnetic spectrum. In particular, the phosphor is excited by electromagnetic radiation in the range of 300 nanometers to 550 nanometers (inclusive), and especially in the range of 400 nanometers to 500 nanometers (inclusive).

[0063] According to at least one embodiment, the phosphor is excited by electromagnetic radiation in the visible range of the electromagnetic spectrum. In particular, the phosphor is excited by electromagnetic radiation in the range of 380 nanometers to 830 nanometers (inclusive).

[0064] In particular, the f→f transition can be directly excited by electromagnetic radiation in the visible range of the electromagnetic spectrum, for example, electromagnetic radiation in the red range of the electromagnetic spectrum, such as wavelengths around 635 nm. By directly exciting the f→f transition, efficiency losses due to energy transfer from the sensitizer to the MC element can be reduced.

[0065] According to at least one embodiment, the emission spectrum of electromagnetic radiation emitted by the phosphor has an emission peak that shows an emission maximum in the near-ultraviolet to infrared range of the electromagnetic spectrum.

[0066] According to at least one embodiment, the emission spectrum of electromagnetic radiation emitted by a phosphor has an emission peak indicating an emission maximum in the near-ultraviolet to blue range of the electromagnetic spectrum. The near-ultraviolet to blue range of the electromagnetic spectrum includes wavelengths in the range of 300 nanometers to 490 nanometers (inclusive). In particular, the phosphor emits electromagnetic radiation in the near-ultraviolet, violet and / or blue range of the electromagnetic spectrum. The ultraviolet range includes electromagnetic radiation having wavelengths in the range of 300 nanometers to 380 nanometers (inclusive). The violet range includes electromagnetic radiation having wavelengths in the range of 380 nanometers to 430 nanometers (inclusive). The blue range includes wavelengths in the range of 430 nanometers to 490 nanometers (inclusive). For example, the near-ultraviolet to blue emission is produced by Ce as the activating element. 3+ This is achieved by a phosphor containing z-b+c close to 4. In particular, the oxidation environment of the activating element E is achieved when z-b+c is close to 4. This allows Ce 3+ Using this as an activating element, the emission of phosphors in the ultraviolet to blue wavelength range can be induced.

[0067] According to at least one embodiment of the phosphor, the emission spectrum of electromagnetic radiation emitted by the phosphor has an emission peak showing an emission maximum in the green to yellow range of the electromagnetic spectrum. The green to yellow range of the electromagnetic spectrum includes wavelengths in particular in the 490 nanometer to 600 nanometer range (inclusive). In particular, the phosphor emits electromagnetic radiation in the green and / or yellow range of the electromagnetic spectrum. In particular, the green range includes electromagnetic radiation having wavelengths in the 490 nanometer to 570 nanometer range (inclusive). The yellow range includes electromagnetic radiation having wavelengths in particular in the 570 nanometer to 600 nanometer range (inclusive). For example, the green to yellow emission is produced by Ce as the activating element. 3+ and / or Mn 2+ This is achieved by phosphors containing . For green to yellow emission, Ce 3+ For example, the environment contains N atoms. For example, Eu 2+With activating element E, the phosphor has an emission peak that shows an emission maximum in the yellow range of the electromagnetic spectrum.

[0068] Advantageously, phosphors that emit light from green to yellow can be used in general lighting, retail lighting, high-power LEDs such as car headlights, and projection, such as projectors.

[0069] According to at least one embodiment of the phosphor, the dominant wavelength λ of the electromagnetic radiation emitted by the phosphor dom This range is from 490 nanometers to 780 nanometers (including both ends), and more specifically, from 490 nanometers to 600 nanometers (including both ends).

[0070] To determine the dominant wavelength of electromagnetic radiation emitted by a phosphor, a straight line is drawn from the white point through the color locus of the electromagnetic radiation in the CIE standard diagram. At the intersection of this line and the spectral color lines that delineate the CIE standard diagram, the point closest to the color locus of the phosphor's emission represents the dominant wavelength of electromagnetic radiation. Generally, the dominant wavelength is different from the wavelength of emission maximum.

[0071] In particular, the molecular formula Li8MC[LiSi4N4O8]:Ce 3+ According to at least one embodiment of a phosphor having, the emission spectrum of electromagnetic radiation emitted by the phosphor has an emission peak showing an emission maximum in the range of 490 nanometers to 550 nanometers (inclusive of both ends), particularly in the range of 500 nanometers to 530 nanometers (inclusive of both ends).

[0072] In particular, the molecular formula Li8MC[LiSi4N4O8]:Ce 3+ According to at least one embodiment of a phosphor having, the main wavelength λ of the electromagnetic radiation emitted by the phosphor dom This range is from 500 nanometers to 600 nanometers (including both ends), and more specifically, from 525 nanometers to 575 nanometers (including both ends).

[0073] According to at least one embodiment of the phosphor, the emission spectrum of the electromagnetic radiation emitted by the phosphor has an emission peak indicating an emission maximum in the orange to red range of the electromagnetic spectrum. The orange to red range of the electromagnetic spectrum includes wavelengths in the range of, in particular, 600 nanometers to 780 nanometers (including both ends). In particular, the phosphor emits electromagnetic radiation in the orange and / or red range of the electromagnetic spectrum. The orange range includes electromagnetic radiation having wavelengths in the range of, for example, 600 nanometers to 640 nanometers (including both ends). The red range includes electromagnetic radiation having wavelengths in the range of, for example, 640 nanometers to 780 nanometers (including both ends). For example, the orange to red emission is achieved by a phosphor containing Eu 2+ as an activating element. The red emission can be achieved by Mn 2+ or Mn 4+ . Furthermore, the Ce 3+ activated phosphor with MC being Ho, Pr, Tm and Eu can have emission in the orange to red wavelength range.

[0074] Advantageously, phosphors that emit light from orange to red can be used for general lighting, store lighting, cultivation lighting, and backlights of displays.

[0075] According to at least one embodiment of the phosphor, the main wavelength λ dom of the electromagnetic radiation emitted by the phosphor is in the range of 600 nanometers to 780 nanometers (including both ends), particularly in the range of 600 nanometers to 750 nanometers (including both ends).

[0076] According to at least one embodiment of the phosphor, the emission spectrum of the electromagnetic radiation emitted by the phosphor has an emission peak indicating an emission maximum in the near-infrared to infrared range of the electromagnetic spectrum. The near-infrared range of the electromagnetic spectrum includes wavelengths in the range of, for example, 780 nanometers to 3.0 micrometers (including both ends), particularly in the range of 800 nanometers to 1,500 nanometers (including both ends), for example, in the range of 850 nanometers to 1,050 nanometers (including both ends). For example, the near-infrared emission is achieved by a phosphor containing Eu2+ is achieved by a phosphor containing Cr 3+ , Nd 3+ , Tm 3+ , Er 3+ , Ni 2+ , Ti 2+ , Ti 3+ or Bi 3+ as an activating element, near-infrared to infrared luminescence can also be observed.

[0077] Especially when MC is Nd, Er or Tm, Ce 3+ can also be used as an activating element for near-infrared luminescence. In this case, the activating element Ce 3+ acts as a sensitizer for MC which is Nd, Er or Tm. In particular, the activating element Ce 3+ transfers part of the absorbed energy to Nd, Er or Tm, so that luminescence resulting from transitions in Ce 3+ can hardly be measured. For example, a phosphor in which MC is Nd or Er and E is Ce 3+ , or a phosphor in which MC is Gd and E is Ce 3+ and Nd 3+ emits light in the range of 850 nanometers to 1,050 nanometers (including both ends). For example, a phosphor in which MC is Nd or Er and especially E is Ce 3+ also emits light in the range of 1,050 nanometers to 2,500 nanometers (including both ends), particularly in the range of 1,050 nanometers to 1,700 nm (including both ends).

[0078] In particular, a phosphor in which MC is Tm emits light in the range of 750 nanometers to 850 nanometers (including both ends). For example, a phosphor in which MC is especially Er shows a luminescence maximum in the range of 1,500 nanometers to 1,650 nanometers (including both ends).

[0079] Advantageously, phosphors having near-infrared and / or infrared luminescence can be used, for example, in spectroscopic analysis of foods or polymers, and in sensor applications.

[0080] For example, amino groups have absorption bands at approximately 1,050 nanometers and / or approximately 1,500 nanometers. This absorption band can be used particularly to detect the protein content of food. The phosphors described herein have luminescence in this range in particular. Therefore, this can be advantageously used in applications that help determine the protein content of food. For example, phosphors in which MC is Nd or Er are used in such applications.

[0081] Furthermore, due to the above-mentioned luminescence properties, Cr is particularly suitable as an activating element. 3+ Or Ni 2+ The phosphors described herein, including or having MC=Nd or Er, can be advantageously used in applications requiring broadband emission in the infrared spectral range. For example, the phosphors are used in analytical instruments equipped with silicon detectors. The sensitivity of silicon detectors decreases significantly as the wavelength increases beyond approximately 900 nanometers. This effect can be counteracted by the phosphors described herein. As a result, the measurement accuracy of spectroscopic investigations can be advantageously improved, and weak absorption bands in the range beyond 900 nanometers can be detected, for example.

[0082] Furthermore, the phosphors described herein having infrared emission can be used in optical coherence tomography, particularly in the medical field, for example, in ophthalmology or angiography. In coherence tomography, wavelengths in the range of 800 nanometers to 1,400 nanometers (including both ends) are particularly used. Angiography is used, for example, to visualize blood vessels. Similarly, the phosphors described herein having infrared emission can be used in facial recognition, particularly for unlocking or authenticating smartphones, or in optical thermometry. In optical thermometry, for example, changes in emission are observed as a function of ambient temperature.

[0083] Cr as the activating element 3+ Phosphors containing Cr may have low efficiency. 3+This can be explained by the moderate excitability of the Laporte forbidden d→d electron transition of the activating element. With increasing temperature, excited Cr 3+ As the non-radiative transitions of electrons to the ground state increase, the emission intensity may decrease, therefore, Cr 3+ It's possible that the activated phosphor only possesses low-temperature stability in its emission. With other phosphors, this effect can already occur at temperatures below room temperature, i.e., around 23°C.

[0084] Nd 3+ or Er 3+ For lanthanide ions such as the closed 5s 2 5p 6 Shielding of 4f electrons by xenon shell electrons can be observed. Therefore, optical transitions between 4f states, which may also be involved in the luminescence of the phosphors described herein, are largely unaffected by lattice vibrations or ligand interactions, which can similarly be enhanced by increasing temperature. For this reason, non-radiative transitions to the ground state due to lattice vibrations are less likely to occur, especially in the phosphors described herein where MC=Nd or Er. Consequently, the phosphors described herein where MC or E=Nd or Er are used in applications requiring luminescence in the near-infrared region. Compared to other phosphors, phosphors where MC or E=Nd or Er may exhibit more stable luminescence even at higher operating temperatures.

[0085] Materials used to date, such as Cd(Te,Se) material systems and quantum dots, meet the necessary criteria for continuous emission spectra in the near-infrared range for spectroscopic investigation, but are unsuitable for industrial applications due to the toxicity of Cd. However, the phosphors described herein, in particular, do not contain Cd, and are therefore advantageously free from any strict restrictions on use.

[0086] According to at least one embodiment of the phosphor, the emission spectrum of electromagnetic radiation emitted by the phosphor is a centroid wavelength λ in the range of 700 nanometers to 2,000 nanometers (inclusive). centroid It holds.

[0087] The centroid wavelength represents the centroid of the spectral distribution of the emission spectrum. In other words, the centroid wavelength indicates where the center of the emission spectrum is located. The centroid wavelength is calculated as the weighted arithmetic mean of the amplitude-weighted wavelengths λ using the distribution function s(λ):

number

[0088] According to at least one embodiment of the phosphor, the emission peak in the emission spectrum of electromagnetic radiation emitted by the phosphor has a full width at half maximum (FWHM) of at most 800 nanometers, particularly at most 500 nanometers, for example, at most 300 nanometers or at most 250 nanometers.

[0089] The term "full width at half maximum" refers to the curve with a maximum value, such as an emission spectrum, where the full width at half maximum is the range on the x-axis corresponding to two y-values ​​that are half of the maximum value.

[0090] According to at least one embodiment of the phosphor, the emission peak in the emission spectrum of electromagnetic radiation emitted by the phosphor has a full width at half maximum (FMAX) in the range of 50 nanometers to 250 nanometers (inclusive), particularly in the range of 80 nanometers to 150 nanometers (inclusive). In other words, the phosphor is a broadband-emitting phosphor. Advantageously, such a phosphor can be used in white light applications. Advantageously, because the large FMAX covers a wide wavelength range, a mixture of different phosphors is no longer required.

[0091] For example, Ce as an activating element. 3+ The emission peak of the phosphor containing has a full width at half maximum in the range of 70 nanometers to 250 nanometers (including both ends). For example, Eu as the activating element. 2+ Phosphors containing this material have emission peaks with a full width at half maximum in the range of 10 nanometers to 180 nanometers (including both ends) or 10 nanometers to 150 nanometers (including both ends).

[0092] According to at least one embodiment of the phosphor, the emission peak in the emission spectrum of electromagnetic radiation emitted by the phosphor has a full width at half maximum (FMAX) of at most 50 nanometers. In particular, the FMAX is at most 30 nanometers or at most 20 nanometers. In other words, the phosphor is, for example, a narrowband emission phosphor. Advantageously, such a phosphor can be used in applications where a specific narrowband wavelength range is required, such as in display applications using color filters. If a wider wavelength range is provided to the color filter, energy is lost due to unsuitable wavelengths. Therefore, the phosphor can improve the efficiency of such applications.

[0093] For example, Mn as an activating element 4+ Phosphors containing have emission peaks with a maximum full width at half maximum of 50 nanometers. 3+ Emission peaks caused by MC or E can also have a full width at half maximum of up to 50 nanometers. In particular, when E is Mn 4+ , Pr 3+ Ho 3+ , Nd 3+ , Tb 3+ , Tm 3+ Er 3+ Sm 3+ or Eu 3+ The phosphor has an emission peak with a full width at half maximum in the range of 1 nanometer to 20 nanometers (including both ends).

[0094] According to at least one embodiment of the phosphor, the emission spectrum has multiple emission peaks. In particular, the multiple emission peaks have at least two emission peaks, for example, three or more emission peaks, which have, for example, different spectral intensities and / or different full widths at half maximum.

[0095] In particular, phosphors have emission peaks that show emission maxima in the green to yellow wavelength range of the electromagnetic spectrum, and emission peaks in the orange to red wavelength range and / or the near-infrared to infrared wavelength range of the electromagnetic spectrum.

[0096] Therefore, advantageously, when using phosphors in optoelectronic components, it is possible to achieve a higher color rendering index (CRI) than when using conventional phosphors, such as garnet alone. In particular, the improved CRI is achieved with phosphors, especially those with the molecular formula Li8MC[LiSi4N4O8]:Ce 3+ Observed using a phosphor having , where MC is Ho, Pr, Tm, Tb, Sm, or Eu. Phosphors described herein, where E is Ho, Pr, or Eu, can also advantageously result in an improved color rendering index in optoelectronic components.

[0097] Furthermore, advantageously, due to the different emission peaks, it may be possible to use only a single phosphor rather than a mixture of different phosphors. In particular, this can avoid the use of expensive red nitride phosphors.

[0098] According to at least one embodiment of the phosphor, the emission spectrum of electromagnetic radiation emitted by the phosphor has only one emission peak.

[0099] According to at least one embodiment, the phosphor has an improved luminous efficiency of radiation. The luminous efficiency (LER) of radiation from a phosphor is the quotient between the luminous flux of electromagnetic radiation emitted by the phosphor and the luminous power of electromagnetic radiation emitted by the phosphor. The higher the luminous efficiency of radiation, the greater the luminous flux that the eye can utilize with a given power.

[0100] For example, phosphors, especially those with the molecular formula Li8MC[LiSi4N4O8]:Ce 3+ A phosphor having MC is Y, Gd, Tm, Lu, Sm, or Dy, and an improved luminous effect of radiation can be observed.

[0101] According to at least one embodiment, in particular the molecular formula Li8MC[LiSi4N4O8]:Ce 3+ A phosphor having 400 lm·W opt. -1 ~500lm·W opt. -1It has a luminous intensity of radiation in the range (including both ends). For example, the luminous intensity of radiation from a phosphor is 430 lm·W. opt. -1 It is higher than that. For this reason, the phosphors described herein can advantageously have a higher luminous emission than conventional garnet phosphors.

[0102] In particular, the molecular formula Li8MC[LiSi4N4O8]:Ce 3+ According to at least one embodiment of a phosphor having the above characteristics, the luminescence intensity of the phosphor at about 100°C is at least 70%, particularly at least 75%, for example, about 85%, of the luminescence intensity of the phosphor at about 25°C. Therefore, advantageously, the phosphor has high-temperature stability.

[0103] According to at least one embodiment, the phosphor is crystalline. In other words, the host structure of the phosphor has a defined crystalline structure. The crystalline structure can be described using a unit cell, which is a unit in which the host structure can be constructed by iterative translation in three directions.

[0104] To describe the three-dimensional unit cell of a crystal structure, six lattice constants are required: three lengths a, b, and c, and three angles α, β, and γ. The three lattice constants a, b, and c are the lengths of the lattice vectors spanning the unit cell. The other three lattice constants α, β, and γ are the angles between these lattice vectors. α is the angle between b and c, β is the angle between a and c, and γ is the angle between a and b. V corresponds to the volume of the unit cell.

[0105] According to at least one embodiment of the phosphor, the crystalline structure of the phosphor's host structure includes a skeleton. In particular, the skeleton is composed of skeleton-forming agents such as MA, MD, ME, and MG in combination with oxygen and nitrogen. Molecular formula Li 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+cIn ]:E, the components forming the phosphor skeleton are shown in square brackets. For example, Li, MB, MF, and MC are located in the spaces between the skeletons. In particular, the activating element E is also located in the spaces of the skeleton. For example, the activating element E occupies the same location as MC in the host structure.

[0106] According to at least one embodiment of the phosphor, the framework is composed of layers and / or a three-dimensional network. In other words, the crystalline structure of the host structure of the phosphor may include layers and / or a three-dimensional network. In particular, the layers or the three-dimensional network are formed of tetrahedra. For example, the three-dimensional network is formed of linked layers.

[0107] In particular, the positions of atoms in the framework and / or the spaces between the frameworks change depending on the composition of the phosphor. This can be explained, for example, by the different atomic radii and / or preferred coordination spheres of the elements used. For example, the structure changes in the presence of MB, MF, ME, and / or MG. However, it is also possible that the structure remains the same even in the presence of MB, MF, ME, and / or MG.

[0108] According to at least one embodiment of the phosphor, the crystalline structure of the host structure of the phosphor comprises a coordination polyhedron containing Li, MB, MF, MC, MA, MD, ME, or MG as the central atom. In particular, the coordination polyhedron is selected from the following group: tetrahedron, trigonal bipyramid, square bipyramid, pentagonal bipyramid, hexagonal bipyramid, square pyramid, pentagonal pyramid, hexagonal pyramid, octahedron, cube, trigonal prism, regular square prism, trigonal antiprism, square antiprism, and especially regular square antiprism. Li, MB, MF, MC, MA, MD, ME, or MG may be in a trigonal or tetragonal planar coordination. The tetrahedron may be single, double, or triple capped and / or distorted.

[0109] According to at least one embodiment of the phosphor, the coordination polyhedra are linked at least partially by corners. The corner-linked coordination polyhedra have a common corner in particular. For example, such a corner is formed by anions.

[0110] According to at least one embodiment of the phosphor, the coordination polyhedra are connected at least partially by edges. The coordination polyhedra connected by edges have, in particular, common edges.

[0111] According to at least one embodiment of the phosphor, the crystal structure of the host structure of the phosphor includes at least one structural element selected from the following group: MA(N,O)4 tetrahedron, MD(N,O)4 tetrahedron, ME(N,O)4 tetrahedron, and MG(N,O)4 tetrahedron. In particular, the crystal structure includes Si(N,O)4 tetrahedron and / or Li(N,O)4 tetrahedron.

[0112] In particular, tetrahedra have tetrahedron gaps. A tetrahedron gap is the area inside each tetrahedron. For example, the term "tetrahedron gap" is used to describe the area inside a tetrahedron that remains empty when spheres are placed at the corners of tetrahedra that are considered to be in contact.

[0113] The N atoms and / or O atoms of a tetrahedron form a tetrahedron, and depending on the type of tetrahedron, MA atoms, MD atoms, ME atoms, or MG atoms are located within the tetrahedral gap of the formed tetrahedron. In other words, the tetrahedron is centered around MA atoms, MD atoms, ME atoms, or MG atoms, depending on the type of tetrahedron. The MA atoms, MD atoms, ME atoms, or MG atoms are tetrahedralized by a total of four N atoms and / or O atoms. In particular, all the N atoms and / or O atoms forming the tetrahedron are at roughly the same distance from the MA atoms, MD atoms, ME atoms, or MG atoms located within the tetrahedral gap.

[0114] According to at least one embodiment of the phosphor, the crystalline structure of the host structure of the phosphor includes corner-linked MA(N,O)4 tetrahedra, MD(N,O)4 tetrahedra, ME(N,O)4 tetrahedra and / or MG(N,O)4 tetrahedra. In particular, the MA(N,O)4 tetrahedra, MD(N,O)4 tetrahedra, ME(N,O)4 tetrahedra and / or MG(N,O)4 tetrahedra have all faces linked at corners.

[0115] According to at least one embodiment of the phosphor, the crystalline structure of the host structure of the phosphor includes edge-linked MA(N,O)4 tetrahedra, MD(N,O)4 tetrahedra, ME(N,O)4 tetrahedra and / or MG(N,O)4 tetrahedra.

[0116] According to at least one embodiment of the phosphor, in the crystalline structure of the phosphor's host structure, MC and / or E are 8-coordinate. In other words, eight anions are present in the coordination sphere of MC and / or E. Specifically, the MC and / or E atoms are surrounded by the eight anions in a square antiprismatic manner. It has been shown that 8-coordination has a favorable effect on the luminescence properties of MC and / or E.

[0117] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the crystalline structure of the phosphor's host structure contains five-coordinate Li. Specifically, Li is coordinated in a trigonal bipyramidal and / or quadrangular pyramidal manner. However, Li can also be coordinated in different ways within the phosphor.

[0118] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the crystalline structure of the phosphor's host structure includes different layers. Specifically, the layers are arranged alternately. For example, the layers are in the ab plane.

[0119] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the crystalline structure of the host structure of the phosphor includes a first layer. The first layer is, for example, a lysilicate layer. The lysilicate layer includes, in particular, Si(N,O)4 tetrahedra and Li(N,O)4 tetrahedra.

[0120] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the first layer includes structural elements selected from the following group: MA(N,O)4 tetrahedron, MD(N,O)4 tetrahedron, ME(N,O)4 tetrahedron, and MG(N,O)4 tetrahedron. In particular, the structural elements in the first layer are such that, for example, all faces are connected at corners. Specifically, the first layer includes Si(N,O)4 tetrahedrons and Li(N,O)4 tetrahedrons. For example, a Li(N,O)4 tetrahedron is connected at corners to four Si(N,O)4 tetrahedrons.

[0121] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the first layer comprises a tetracyclic MA(N,O)4 tetrahedron, an MD(N,O)4 tetrahedron, an ME(N,O)4 tetrahedron, and / or an MG(N,O)4 tetrahedron, in particular an MD(N,O)4 tetrahedron, such as a Si(N,O)4 tetrahedron. The tetracyclic rings are formed, in particular, by linking tetrahedra at their corners.

[0122] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor has channels. Specifically, the channels are formed by tetrarings in the first layer. For example, the channels extend along the c-axis.

[0123] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the MC atoms are arranged within the channel. Specifically, the MC atoms are coordinated in a square antiprismatic manner. The activating element E can occupy the same position as the MC atoms in the crystal structure of the phosphor's host structure.

[0124] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the crystalline structure of the phosphor's host structure includes a second layer. Specifically, the first and second layers are arranged alternately. For example, the first and second layers are linked to each other. In this way, a three-dimensional network can be formed.

[0125] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the second layer comprises a coordination polyhedron having Li as a central atom. In particular, the second layer comprises 5-coordinate Li. For example, the Li in the second layer is coordinated in a triangular bipyramidal and / or quadrangular pyramidal manner. In other words, the second layer comprises triangular Li(N,O)5-bipyramidal and / or quadrangular Li(N,O)5-pyramidal. In particular, the coordination polyhedra having Li as a central atom, such as triangular Li(N,O)5-bipyramidal and / or quadrangular Li(N,O)5-pyramidal, are connected by edges.

[0126] In particular, coordination polyhedra having Li as the central atom, such as triangular Li(N,O)5 bipyramids and / or square Li(N,O)5 pyramids, are arranged in the second layer such that the channels from the first layer are continuous. For example, four triangular Li(N,O)5 bipyramids and four square Li(N,O)5 pyramids are arranged such that the channels from the first layer are continuous.

[0127] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the first and second layers form a three-dimensional network. Therefore, the phosphor is sometimes referred to as a lithium oxonitol dorisosilicate.

[0128] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor has a tetragonal space group, specifically P4 / n.

[0129] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor has a lattice constant a in the range of 8.00 Å to 12.00 Å (including both ends), and in particular in the range of 9.50 Å to 10.50 Å (including both ends). In the tetragonal space group, the lattice constant a is equal to the lattice constant b in particular.

[0130] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor has a lattice constant c in the range of 4.00 Å to 6.00 Å (including both ends), and in particular in the range of 4.50 Å to 5.50 Å (including both ends).

[0131] In particular, according to at least one embodiment of a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor is 400 Å. 3 ~600Å 3 The range (including both ends), especially 450 Å 3 ~550Å 3 It has a unit cell volume V in the range (including both ends).

[0132] According to at least one embodiment, the phosphor has the same crystal structure as Li8Gd[LiSi4N4O8]:E.

[0133] Methods for producing phosphors are further disclosed. Preferably, the phosphors according to the embodiments described above are produced using the methods described herein. In particular, all descriptions given for phosphors also apply to the methods, and vice versa.

[0134] According to at least one embodiment of the method, a phosphor is produced comprising an element or combination of elements from the group of monovalent elements, an element or combination of elements from the group of trivalent elements, an element or combination of elements from the group of tetravalent elements, oxygen and / or nitrogen, and an activating element E.

[0135] According to at least one embodiment of the method, a phosphor having the following molecular formula is produced. Li 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c ]:E (In the formula, 0≦x≦4, 0≦c≦1, 0≦z≦4, 0≦a≦8, 0≦b≦4, 0≦2x+a≦8, 0≦z+b≦4, -4≦-z+bc≦4, MB is an element or combination of elements from the group of divalent elements, MC is an element or combination of elements from the group of trivalent elements, MA is Li and / or Na, MD is an element or combination of elements from the group of tetravalent elements, ME is an element or combination of elements from the group of trivalent elements, MF is an element or combination of elements from the group of monovalent elements, MG is an element or combination of elements from the group of pentavalent elements, and E is the activating element.)

[0136] According to at least one embodiment of the method, a reactant is prepared. In particular, the reactant is selected from the group formed by monovalent, divalent, trivalent, tetravalent, pentavalent, and activating elements, oxides, nitrides, nitridosilicates, halides, oxalates, citrates, carbonates, amides, and imides. In particular, the reactant is selected from the group formed by the elements Li, MB, MF, MC, MA, MD, ME, MG, and E, oxides, nitrides, nitridosilicates, halides, oxalates, citrates, carbonates, amides, and imides. For example, the reactant for producing a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E is selected from the group formed by the elements Li, MC, Si, and E, oxides, nitrides, nitridosilicates, and fluorides. In particular, the reactants are Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Gd, Gd2O3, GdF3, Dy, Dy2O3, DyF3, Ho, Ho2O3, HoF3, Pr, Pr2O3, Pr6O 11 The reactants are selected from the group formed by PrF3, Nd, Nd2O3, NdF3, Y, Y2O3, YF3, Tm, Tm2O3, TmF3, Tb, Tb2O3, Tb4O7, TbF3, Er, Er2O3, ErF3, Lu, Lu2O3, LuN, LuF3, Yb, Yb2O3, YbF3, Sm, Sm2O3, SmF3, Ce, CeO2, CeF3, CeN, EuF2, and Eu2O3. Advantageously, the reactants can be obtained easily and inexpensively.

[0137] According to at least one embodiment of the method, the reactants are mixed to form a reactant mixture. The mixing is carried out using, in particular, a mortar and pestle, a mortar mill, a ball mill, or a multi-spindle mixer.

[0138] According to at least one embodiment of the method, the reactant mixture is heated. In particular, the heating is carried out in a tubular furnace, a flow-tube furnace, or a high-frequency furnace.

[0139] According to at least one embodiment, the method includes the steps of preparing reactants, mixing the reactants to form a reactant mixture, and heating the reactant mixture. In particular, the steps are carried out in a specified order.

[0140] In particular, by certain methods, it is possible to prepare a mixture containing or consisting of a phosphor. Further components of the mixture may be, for example, reactants that did not react during the preparation of the phosphor, impurities, and / or secondary phases formed during the preparation.

[0141] According to at least one embodiment of the method, heating is performed to a first temperature in the range of 700°C to 1,600°C (inclusive of both ends), particularly in the range of 800°C to 1,600°C (inclusive of both ends), for example, in the range of 900°C to 1,400°C (inclusive of both ends).

[0142] According to at least one embodiment of the method, heating is performed to a first temperature in the range of 800°C to 1,100°C (including both ends), particularly in the range of 900°C to 1,000°C (including both ends). This temperature is particularly used when using Ta tubes. Therefore, advantageously, phosphors having the molecular formula Li8MC[LiSi4N4O8]:E can be produced at relatively low temperatures. On the other hand, garnet RE3(Al,Ga)5O 12 :E is produced at a temperature of at least 1,500°C. Therefore, the method described herein allows for advantageous energy savings.

[0143] According to at least one embodiment of the method, the reactant mixture is heated to a first temperature for a time in the range of 30 minutes to 20 hours (inclusive), particularly in the range of 8 hours to 15 hours (inclusive), for example, about 12 hours.

[0144] According to at least one embodiment of the method, the reactant mixture is heated and then cooled particularly slowly. For example, a temperature program including a second temperature and / or a third temperature is executed during cooling. A first cooling rate is specifically set to reach a second temperature. In particular, the second cooling rate is set to reach a third temperature.

[0145] In particular, the second temperature is at most 600°C, for example, at most 500°C. In particular, the third temperature is at most 200°C, for example, at most 150°C. In particular, the first cooling rate is at most 500°C / hour, in particular at most 6°C / hour, for example, at most 3°C / hour, for example, about 2°C / hour or about 1°C / hour. In particular, the second cooling rate is at most 250°C / hour, in particular at most 20°C / hour, for example, at most 18°C / hour.

[0146] According to at least one embodiment of the method, the reactant mixture is heated under a protective gas atmosphere. For example, the protective gas atmosphere is argon and / or N2, particularly an argon atmosphere. In particular, heating the reactant mixture leads to overpressure of the protective gas during the reaction.

[0147] According to at least one embodiment of the method, heating is carried out in a W crucible, a Ni crucible, or a Ta tube. Heating in a W crucible or Ni crucible is carried out, for example, in a flow-tube furnace or a high-frequency furnace. Heating in a Ta tube is carried out, for example, in a tubular furnace.

[0148] According to at least one embodiment of the method, a flux is added to the reactant mixture. In particular, a flux of up to 10% by weight, and especially up to 5% by weight, is added relative to the total amount of the reactant mixture. The flux can be advantageously used to improve the crystallinity of the phosphor and / or to support crystal growth.

[0149] In particular, the flux includes compounds selected from the group formed by halides, especially chlorides and / or fluorides, boron-containing compounds and combinations thereof. For example, the flux is a compound or combination of compounds selected from the following group: Li, LiF, LiCl, NaF, NaCl, SrCl2, SrF2, CaCl2, CaF2, BaCl2, BaF2, NH4Cl, NH4F, KF, KCl, MgF2, MgCl2, AlF3, H3BO3, B2O3, Li2B4O7, NaBO2, Na2B4O7, LiBF4, NH4HF2, NaBF4, KBF4, EuF3 and compounds derived therefrom, such as hydrates. Advantageously, the reactants themselves can also act as the flux.

[0150] According to at least one embodiment of the method, in particular, a phosphor having the molecular formula Li8MC[LiSi4N4O8]:E reacts with Si3N4, SiO2, Li2O and MC2O3, MC6O 11 Alternatively, it is prepared using MCF3. The reactant mixture further comprises reactants for E, such as CeF3. In particular, reactants Si3N4, SiO2, Li2O and MC2O3, MC6O 11 Alternatively, MCF3 may be used in ratios of 2.2:1.6:10.5:0.3 to 2:2:10.5:1 or 2:2:10.5:0.3 to 2:2:10.5:1. For example, Li or LiF may be added to the reactant mixture as a flux at a maximum of 10% by weight, and especially at a maximum of 5% by weight, based on the total amount of the reactant mixture.

[0151] Furthermore, the use of the phosphors described herein will be discussed. Therefore, all the characteristics disclosed with respect to the phosphors also apply to their use, and vice versa.

[0152] According to at least one embodiment, a phosphor is used as a light source. In particular, the light source is configured to include an optoelectronic component that emits electromagnetic radiation in the ultraviolet to infrared wavelength range of the electromagnetic spectrum, especially in the visible wavelength range.

[0153] Optoelectronic components will be described further. In particular, optoelectronic components include the phosphors described herein. Therefore, all descriptions given for phosphors and methods for producing them also apply to optoelectronic components, and vice versa.

[0154] According to at least one embodiment, the optoelectronic component comprises a radiation-emitting semiconductor chip. In particular, the radiation-emitting semiconductor chip emits electromagnetic radiation in a first wavelength range during operation. The semiconductor chip may include an active, particularly epitaxially grown, layer sequence, which includes an active region capable of producing electromagnetic radiation in the first wavelength range during the operation of the component. The semiconductor chip is, for example, a light-emitting diode chip or a laser diode chip. The electromagnetic radiation in the first wavelength range produced in the semiconductor chip is emitted, for example, from the radiation exit surface of the semiconductor chip. In particular, the electromagnetic radiation in the first wavelength range has the excitation wavelength of the phosphor described herein.

[0155] According to at least one embodiment, the optoelectronic component comprises a conversion element having a phosphor described herein. In particular, the phosphor converts electromagnetic radiation in a first wavelength range to electromagnetic radiation in a second wavelength range. The first wavelength range is at least partially different from the second wavelength range. The conversion element is arranged, for example, so that electromagnetic radiation in the first wavelength range emitted by a radiation-emitting semiconductor chip collides with the conversion element. Electromagnetic radiation in the second wavelength range includes electromagnetic radiation emitted by the phosphor.

[0156] According to at least one embodiment, the optoelectronic component comprises a radiation-emitting semiconductor chip and a conversion element containing a phosphor as described herein.

[0157] According to at least one embodiment of the optoelectronic component, the radiation-emitting semiconductor chip includes a microLED. In this section and hereafter, LED is an abbreviation for light-emitting diode. In particular, the radiation-emitting semiconductor chip is a microLED.

[0158] A microLED may have a width, length, thickness, and / or diameter of 100 micrometers or less, particularly 70 micrometers or less, for example 50 micrometers or less. In particular, a microLED, such as a rectangular microLED, has a side length of the light-emitting surface of 70 micrometers or less, for example 50 micrometers or less, especially in a plan view of the layers of a layer stack. A microLED is, for example, a light-emitting diode from which the growth substrate has been removed so that the thickness of the microLED is in the range of, for example, 1.5 micrometers to 10 micrometers (including both ends).

[0159] For example, a micro-LED is mounted on a wafer having a removable retaining structure. The micro-LED can be removed from the wafer non-destructively.

[0160] In particular, microLEDs are primarily used in displays. MicroLEDs form pixels or subpixels and emit light of a specified color. Due to their small pixel size and high density over short distances, microLEDs are well-suited for augmented reality applications, especially small monolithic displays for data glasses. Other applications are also being developed, particularly for use in data communications or pixelated lighting.

[0161] According to at least one embodiment of the optoelectronic component, the first wavelength range includes wavelengths in the ultraviolet to blue wavelength range of the electromagnetic spectrum. For example, the first wavelength range includes wavelengths in the range of 300 nanometers to 550 nanometers (inclusive of both ends), and in particular the range of 400 nanometers to 500 nanometers (inclusive of both ends).

[0162] In particular, radiation-emitting semiconductor chips have a dominant wavelength λ in the range of 430 nanometers to 460 nanometers (including both ends). dom It emits electromagnetic radiation having [certain properties].

[0163] According to at least one embodiment of optoelectronic components, the radiation-emitting semiconductor chip emits at least 0.25Wopt. / mm 2 at least 0.5W opt. / mm 2 or at least 1W opt. / mm 2 It emits blue light with its power.

[0164] According to at least one embodiment of the optoelectronic component, the first wavelength range includes wavelengths in the red region of the electromagnetic spectrum. For example, the first wavelength range includes wavelengths in the range of 600 nanometers to 780 nanometers (inclusive). In particular, a radiation-emitting semiconductor chip that emits electromagnetic radiation in the first wavelength range including wavelengths in the red region of the electromagnetic spectrum is used with a phosphor described herein, which comprises Cr, Ho, Pr, Nd, Er, Cu, or Ni as the activating element E. For example, a red-emitting radiation-emitting semiconductor chip can also be combined with a phosphor where MC is Ho, Pr, Tb, Er, Tm, or Nd. For example, when MC is Ho, Pr, Tb, Er, Tm, or Nd, electromagnetic radiation from the red region of the electromagnetic spectrum can excite an f→f transition, which can result in emission of the phosphor in the near-infrared or infrared region.

[0165] According to at least one embodiment of the optoelectronic component, the first wavelength range includes wavelengths in the range of 700 nanometers to 1,650 nanometers (inclusive). In particular, in this case, the phosphor described herein having infrared emission is used as the conversion element.

[0166] According to at least one embodiment of the optoelectronic component, the radiation-emitting semiconductor chip and the conversion element are arranged within a housing, particularly a cavity within the housing. The housing advantageously serves to mechanically stabilize and protect the semiconductor chip and the conversion element arranged therein.

[0167] According to at least one embodiment of the optoelectronic component, the conversion element is in direct contact with the radiation-emitting semiconductor chip.

[0168] According to at least one embodiment of the optoelectronic component, the conversion element is located away from the radiation-emitting semiconductor chip. However, the conversion element can be connected to the radiation-emitting semiconductor chip, for example, via an adhesive layer. The adhesive layer includes, for example, a silicone resin and / or an epoxy resin.

[0169] According to at least one embodiment of the optoelectronic component, the conversion element has the shape of a platelet. In particular, the phosphor is embedded in an inorganic matrix material. Alternatively, the phosphor can form a layer with an organic or inorganic matrix material, and the layer can be placed on a transparent carrier. In this case, the layer containing the phosphor and the transparent carrier together form a platelet.

[0170] According to at least one embodiment of the optoelectronic component, the conversion element includes a matrix material. A phosphor is embedded in the matrix material, for example. The matrix material includes materials selected from the group formed by glass, e.g., silicate glass, water glass or quartz glass, and polymers, e.g., polystyrene, polysilazane, polymethyl methacrylate (PMMA), polycarbonate, polyacrylate, polytetrafluoroethylene, polyvinyl, silicone resin, silicone, polysiloxane, epoxy resin, and combinations thereof. Silicone and / or polysiloxane may be fluorinated. In particular, the phosphor is uniformly distributed in the matrix material. However, it is also possible for the phosphor to have a concentration gradient in the matrix material.

[0171] According to at least one embodiment of the optoelectronic component, the conversion element is designed as a casting. The casting fills, for example, at least partially, the cavity of a housing. The casting includes a phosphor, in particular a matrix material. In particular, the casting covers the sides of the radiation-emitting component.

[0172] According to at least one embodiment of the optoelectronic component, the non-converting cast body is placed within the cavity of the housing. For example, the non-converting cast body has a transmittance of at least 85% or at least 95% of electromagnetic radiation in the visible wavelength range.

[0173] Such unconverted castings may further contain scattering particles. These scattering particles are selected from the group formed by, for example, SiO2 particles, TiO2 particles, BaSO4 particles, Al2O3 particles, ZrO2 particles, and combinations thereof. In particular, the scattering particles are uniformly distributed within the unconverted casting. However, it is also possible for the scattering particles to have a concentration gradient within the unconverted casting.

[0174] According to at least one embodiment of the optoelectronic component, the conversion element includes scattering particles. The scattering particles are selected from the group formed by, for example, SiO2 particles, TiO2 particles, BaSO4 particles, Al2O3 particles, ZrO2 particles, and combinations thereof. In particular, the scattering particles are uniformly distributed within the conversion element.

[0175] According to at least one embodiment of an optoelectronic component, a conversion element converts only a portion of electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range, while the unconverted portion of the electromagnetic radiation in the first wavelength range passes through the conversion element. In other words, partial conversion of electromagnetic radiation in the first wavelength range to electromagnetic radiation in the second wavelength range occurs. In this case, the radiation-emitting component emits mixed light consisting of electromagnetic radiation in the first wavelength range and electromagnetic radiation in the second wavelength range. For example, the radiation-emitting component emits white mixed light.

[0176] According to at least one embodiment of the optoelectronic component, electromagnetic radiation in a first wavelength range does not penetrate the conversion element. In this context, "does not penetrate" means that only a small amount of electromagnetic radiation in the first wavelength range is transmitted, so as not to have a noticeable effect on the light emitted by the component. For example, at most 10%, especially at most 5%, and for example at most 1%, of the electromagnetic radiation in the first wavelength range penetrates the conversion element. In this case, the radiation-emitting component emits only electromagnetic radiation in a second wavelength range. In other words, a complete conversion of electromagnetic radiation in the first wavelength range to electromagnetic radiation in the second wavelength range occurs.

[0177] According to at least one embodiment, the conversion element does not contain another phosphor. "Does not contain another phosphor" means that only one phosphor described herein or a mixture of different phosphors described herein is contained in the conversion element and results in wavelength conversion.

[0178] According to at least one embodiment of the optoelectronic component, the conversion element includes at least one further phosphor. In particular, the at least one further phosphor is different from the phosphors described herein. However, it is also possible that the conversion element includes two different phosphors described herein. In other words, the at least one further phosphor is a phosphor described herein, but may have a different composition. In particular, the at least one further phosphor converts electromagnetic radiation in a first wavelength range to electromagnetic radiation in a third wavelength range. The third wavelength range is at least partially different from a second wavelength range and / or the first wavelength range. In particular, the optoelectronic component emits mixed light consisting of electromagnetic radiation in a first wavelength range, electromagnetic radiation in a second wavelength range and / or electromagnetic radiation in a third wavelength range.

[0179] According to at least one embodiment, the phosphor in the conversion element is present as a ceramic or in a matrix material. The phosphor present as a ceramic contains little to no matrix material and / or at least one further phosphor. Preferably, the ceramic formed from the phosphor has a low porosity. This prevents or substantially prevents undesirable light scattering and ensures good heat dissipation.

[0180] According to at least one embodiment of the optoelectronic component, at least one further phosphor is arranged in another layer. In other words, the phosphor and the at least one further phosphor are not mixed with each other.

[0181] According to at least one embodiment, the phosphor-containing layer is located adjacent to, above, or below a layer containing at least one further phosphor. In this section and hereafter, above or below refers to a direction perpendicular to the main extending surface of the radiation-emitting semiconductor chip.

[0182] In particular, the layer containing the phosphor and the layer containing at least one further phosphor are arranged laterally adjacent to each other on the radiation-emitting semiconductor chip. Specifically, the radiation-emitting semiconductor chip includes pixels that can be controlled individually from one another. For example, a pixelated optoelectronic component can be provided by adjacently arranged layers containing a phosphor and at least one further phosphor. Such a pixelated optoelectronic component can advantageously emit electromagnetic radiation having different wavelength ranges depending on the region. For example, such an optoelectronic component is suitable for use in displays.

[0183] According to at least one embodiment of the optoelectronic component, the phosphor and at least one further phosphor are mixed within the conversion element. In other words, the phosphor and at least one further phosphor are not arranged in different layers. In particular, the phosphor and at least one further phosphor form a homogeneous mixture.

[0184] According to at least one embodiment of the optoelectronic component, at least one further phosphor is a ceramic phosphor and / or a quantum dot phosphor. In particular, at least one further phosphor is selected from the group formed by the following compounds or combinations thereof: Ce 3+ Doped garnets, e.g., YAG and LuAG, e.g., (Y,Lu,Gd,Tb)3(Al 1-x Ga x )5O 12 :Ce 3+ ,EU 2+ Doped nitrides, e.g., (Ca,Sr)AlSiN3:Eu 2+ Sr(Ca,Sr)Si2Al2N6:Eu 2+ (SCASN), (Sr,Ca)AlSiN3·Si2N2O:Eu 2+ (Ca,Ba,Sr)2Si5N8:Eu 2+ SrLiAl3N4:Eu 2+ Or (oder)SrLi2Al2O2N2:Eu 2+ Ce 3+ Doped nitrides, e.g., (Ca,Sr)Al (1-4x / 3) Si (1+x) N3:Ce 3+ (x=0.2~0.5), Eu 2+ Doped sulfide, (Ba,Sr,Ca)Si2O2N2:Eu 2+ , SiAlON, nitride orthosilicate, e.g., AE 2-x-a RE x EU a Si 1-y O 4-x-2y N x , orthosilicate, for example (Ba,Sr,Ca)2SiO4:Eu 2+ , chlorosilicate, for example Ca8Mg(SiO4)4Cl2:Eu 2+ ), Mn 4+ Doped fluorides, e.g., (K,Na)2(Si,Ti)F6:Mn 4+ ,EU 2+ or Ce 3+ Doprise socilicates, for example, (Li,Na,K,Rb,Cs)(Li3SiO4):E (where E=Eu) 2+ Ce 3+(Sr,Li)Li3AlO4:Eu 2+ Or SrLi3AlO4:Eu 2+ That is the case.

[0185] Other possible compounds for at least one further phosphor are, in particular, the following aluminum-containing and / or silicon-containing phosphors: (Ba 1-x-y Sr x Ca y )SiO4:Eu 2+ (0≦x≦1, 0≦y≦1), (Ba 1-x-y Sr x Ca y )3SiO5:Eu 2+ (0≦x≦1;0≦y≦1), Li2SrSiO4:Eu 2+ , oxonitol, for example (Ba 1-x-y Sr x Ca y )Si2O2N2:Eu 2+ (0≦x≦1, 0≦y≦1), SrSiAl2O3N2:Eu 2+ Ba 4-x Ca x Si6ON 10 :EU 2+ (0≦x≦1), (Ba 1-x Sr x )Y2Si2Al2O2N5:Eu 2+ (0≦x≦1), Sr x Si (6-y) Al y O y N (8-y) :EU 2+ (0.05≦x≦0.5;0.001≦y≦0.5), Si 6-z Al z O z N 8-z :EU 2+ (0≦z≦0.42), M x Si 12-m-n Al m+n O n N 16-n :EU 2+ (M=Li, Mg, Ca, Y; x=m / v; v=valence of M, x≦2), M x Si 12-m-n Al m+n O n N16-n : Ce 3+ , AE 2-x-a RE x Eu a Si 1-y O 4-x-2y N x (AE = Sr, Ba, Ca, Mg; RE = rare earth elements), AE 2-x-a RE x Eu a Si 1-y O 4-x-2y N x (AE = Sr, Ba, Ca, Mg; RE = rare earth elements), Ba3Si6O 12 N2: Eu 2+ , or nitride, such as La3Si6N 11 : Ce 3+ , (La 1-x Y x )3Si6N 11 : Ce 3+ , (Ba 1-x-y Sr x Ca y )2Si5N8: Eu 2+ , (Ca 1-x-y Sr x Ba y )AlSiN3: Eu 2+ (0 ≦ x ≦ 1; 0 ≦ y ≦ 1), Sr(Sr 1-x Ca x )Al2Si2N6: Eu 2+ (0 ≦ x ≦ 0.2), Sr(Sr 1-x Ca x )Al2Si2N6: Ce 3+ (0 ≦ x ≦ 0.2), SrAlSi4N7: Eu 2+ , (Ba 1-x-y Sr x Ca y )SiN2: Eu<​​​​​​​​​​​​​​​​​​​​)Mg2Al2N4:Eu 2+ (0≦x≦1;0≦y≦1), (Ba 1-x-y Sr x Ca y )Mg3SiN4:Eu 2+ (0≦x≦1; 0≦y≦1).

[0186] According to at least one embodiment, the optoelectronic component emits white mixed light. Such optoelectronic components can be used in general lighting, high-power LEDs, such as automotive headlights, or projection applications, such as projectors. In particular, the optoelectronic component emitting white mixed light contains only the phosphors described herein in its conversion element. However, the conversion element of the optoelectronic component may also contain at least one further phosphor.

[0187] For example, in particular the molecular formula Li8MC[LiSi4N4O8]:E (where MC is Gd, Dy, Y, Ho, Tb, Lu, Sm, Yb, Tm or Pr, and / or E is Ce 3+ and / or Eu 2+ A phosphor having ( ) is used in optoelectronic components that emit white mixed light.

[0188] According to at least one embodiment, the optoelectronic component has a color rendering index (CRI) of at least 70. The color rendering index is a value that indicates how the color rendering of an artificial light source compares to that of natural light such as sunlight. For example, in particular, the molecular formula Li8MC[LiSi4N4O8]:E (where E is Ce 3+ The phosphors described herein, having MC (where MC is Ho, Tb, Lu, Tm, Sm, or Pr), are used in the conversion element. Advantageously, to achieve a CRI of at least 70, only the phosphors described herein are required, and no phosphor mixtures are needed. Optoelectronic components having a CRI of at least 70 are used, for example, in street lighting.

[0189] According to at least one embodiment, the optoelectronic component has a CRI of at least 90. In particular, a phosphor and at least one further phosphor are used in the conversion element of the optoelectronic component having a CRI of at least 90. For example, the conversion element of the optoelectronic component includes a phosphor that emits light from green to yellow and a phosphor that emits light from red. Advantageously, the optoelectronic component having a CRI of at least 90 can be used in general lighting or store lighting.

[0190] Advantageously, conventional garnet phosphors that emit green to yellow light can be replaced by the phosphors described herein that emit green to yellow light. At the same time, the phosphors described herein can have the same dominant wavelength as garnet phosphors. Therefore, equivalent color coordinates can be advantageously achieved using the phosphors described herein. For example, the molecular formula Li8MC[LiSi4N4O8]:E(where E is Ce 3+ ,EU 2+ or Mn 2+ A phosphor having ( ) is used as a phosphor that emits light from green to yellow.

[0191] Furthermore, it is possible to replace conventional red-emitting phosphors with the red-emitting phosphors described herein. Molecular formula Li8MC[LiSi4N4O8]:E(where E is Eu 2+ Mn 2+ or Mn 4+ A phosphor having the characteristic can be used as a red light-emitting phosphor.

[0192] Advantageously, optoelectronic components can have increased R9 values ​​in addition to high CRI. For example, an optoelectronic component comprises a conversion element containing a phosphor that emits green to yellow light and a phosphor that emits red light. In particular, the red-emitting phosphor is adapted and / or selected so that an increased R9 value is achieved. The R9 value represents the specific ability of light to accurately reproduce the red color of an object.

[0193] According to at least one embodiment, the optoelectronic component is used in a display. In particular, the optoelectronic component is used as a backlight unit for the display. For example, the conversion element of the optoelectronic component is, in particular, of the molecular formula Li8MC[LiSi4N4O8]:E(where E is Mn 4+ This specification includes a phosphor having (Mn 4+ Activated phosphors have the advantage of narrow-band emission. Therefore, a wide color gamut can be achieved for displays. The color gamut is also called the color range. The color gamut includes the set of all colors in the color space that a component such as a display can reproduce.

[0194] According to at least one embodiment, an optoelectronic component emits electromagnetic radiation in the wavelength range of 650 nanometers to 780 nanometers (inclusive). In other words, an optoelectronic component can emit long-wavelength red light. For example, in particular, the molecular formula Li8MC[LiSi4N4O8]:E(where E is Eu 2+ or Mn 4+ Phosphors having ( ) are used in such optoelectronic components. For example, chlorophyll has an absorption peak in the range of 650 nanometers to 700 nanometers (inclusive). Therefore, optoelectronic components can be used advantageously for greenhouse lighting, i.e., horticulture.

[0195] According to at least one embodiment of the optoelectronic component, the conversion element includes a phosphor described herein having an emission peak in the near-infrared to infrared wavelength range of the electromagnetic spectrum.

[0196] A common method for analyzing the composition of organic substances such as food or polymers is to record the absorption and / or transmission of infrared or near-infrared radiation. Infrared or near-infrared radiation excites vibrational modes in the material being analyzed, producing characteristic absorption bands. Cr is particularly important as an activating element. 3+Optoelectronic components containing the phosphors described herein, including or having MC=Nd, can be advantageously used as light sources in corresponding, for example, small, portable analytical components or spectrometers, for emission in the near-infrared to infrared wavelength range. Optoelectronic components can be combined with silicon detectors that cover the near-infrared to infrared wavelength range and can be manufactured inexpensively. Advantageously, optoelectronic components can also be used in sensor applications in portable components and industrial machinery where a compact, broadband infrared light source is required.

[0197] Conventionally, halogen lamps have been used as broadband infrared light sources. In comparison, the optoelectronic components described herein have significantly smaller dimensions. Furthermore, heat generation is advantageously moderate, and pulsed operation modes are possible. In addition, by using, for example, a mixture of several phosphors, a broad emission spectrum with nearly continuous intensity can be achieved.

[0198] Further advantageous embodiments, configurations, and developments of phosphors, methods for producing phosphors, and optoelectronic components are shown in the following exemplary embodiments, accompanied by the drawings. [Brief explanation of the drawing]

[0199] [Figure 1] This is a schematic diagram of a phosphor according to an exemplary embodiment. [Figure 2] This is a secondary electron image of a phosphor crystal according to an exemplary embodiment. [Figure 3] This is a schematic cross-sectional view of a phosphor host structure according to an exemplary embodiment. [Figure 4] This is a schematic cross-sectional view of a phosphor host structure according to an exemplary embodiment. [Figure 5] This is a schematic cross-sectional view of a phosphor host structure according to an exemplary embodiment. [Figure 6] This is a schematic cross-sectional view of a phosphor host structure according to an exemplary embodiment. [Figure 7]This is a schematic cross-sectional view of a phosphor host structure according to an exemplary embodiment. [Figure 8] This is a schematic cross-sectional view of a phosphor host structure according to an exemplary embodiment. [Figure 9] This is a schematic cross-sectional view of a phosphor host structure according to an exemplary embodiment. [Figure 10] This is a refined powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 11] This figure shows the excitation spectrum and emission spectrum of a phosphor according to an exemplary embodiment. [Figure 12] This figure shows the emission spectra of phosphors according to exemplary embodiments and comparative examples. [Figure 13] This figure shows the temperature behavior of a phosphor according to an exemplary embodiment. [Figure 14] This figure shows the emission spectra of phosphors according to various exemplary embodiments. [Figure 15A] Same as above [Figure 15B] Same as above [Figure 16] This diagram schematically illustrates various steps in a method for producing a phosphor according to an exemplary embodiment. [Figure 17] These are schematic cross-sectional views of optoelectronic components according to various exemplary embodiments. [Figure 18] Same as above [Figure 19] Same as above [Figure 20] Same as above [Figure 21] Same as above [Figure 22] Same as above [Figure 23] This figure shows simulated emission spectra of optoelectronic components according to various exemplary embodiments and various comparative examples. [Figure 24] Same as above [Figure 25] Same as above [Figure 26] This is a refined powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 27]This figure shows the excitation spectrum and emission spectrum of a phosphor according to an exemplary embodiment. [Figure 28] This figure shows the emission spectra of phosphors according to exemplary embodiments and comparative examples. [Figure 29] This figure shows the temperature behavior of a phosphor according to an exemplary embodiment. [Figure 30] This is a powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 31] This figure shows the emission spectrum of a phosphor according to an exemplary embodiment. [Figure 32] This figure shows simulated emission spectra of optoelectronic components according to various exemplary embodiments and various comparative examples. [Figure 33] Same as above [Figure 34] Same as above [Figure 35] Same as above [Figure 36] Same as above [Figure 37A] This is a secondary electron image of a phosphor crystal according to an exemplary embodiment. [Figure 37B] Same as above [Figure 37C] Same as above [Figure 38] This is a powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 39A] This figure shows the emission spectra of phosphors according to various exemplary embodiments. [Figure 39B] Same as above [Figure 40] Same as above [Figure 41] This figure shows simulated emission spectra of optoelectronic components according to various exemplary embodiments. [Figure 42] This is a secondary electron image of a phosphor crystal according to an exemplary embodiment. [Figure 43] This is a powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 44] This figure shows the emission spectrum of a phosphor according to an exemplary embodiment. [Figure 45A] Same as above [Figure 45B] Same as above [Figure 45C] Same as above [Figure 45D] Same as above [Figure 46] This is a secondary electron image of a phosphor crystal according to an exemplary embodiment. [Figure 47] This is a powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 48] This figure shows the excitation spectrum and emission spectrum of a phosphor according to an exemplary embodiment. [Figure 49A] This figure shows the emission spectra of phosphors according to various exemplary embodiments and comparative examples. [Figure 49B] This figure shows the emission spectra of phosphors according to various exemplary embodiments. [Figure 50] This figure shows the temperature behavior of phosphors according to exemplary embodiments and comparative examples. [Figure 51] This figure shows simulated emission spectra of optoelectronic components according to various exemplary embodiments and various comparative examples. [Figure 52] Same as above [Figure 53] Same as above [Figure 54A] This figure shows the emission spectrum of a phosphor according to an exemplary embodiment. [Figure 54B] Same as above [Figure 55] This is a logarithmic plot of the emission intensity of a phosphor against time according to an exemplary embodiment. [Figure 56] This figure shows the emission spectra of phosphors according to various exemplary embodiments. [Figure 57] This is a secondary electron image of a phosphor according to an exemplary embodiment. [Figure 58] This is a powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 59] This figure shows the emission spectrum of a phosphor according to an exemplary embodiment. [Figure 60] This figure shows the emission spectrum and excitation spectrum of a phosphor according to an exemplary embodiment. [Figure 61] This figure shows the temperature behavior of a phosphor according to an exemplary embodiment. [Figure 62] This figure shows simulated emission spectra of optoelectronic components according to exemplary embodiments and various comparative examples. [Figure 63] This is a secondary electron image of a phosphor according to an exemplary embodiment. [Figure 64] This is a powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 65] This is a refined powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 66] This figure shows the emission spectrum of a phosphor according to an exemplary embodiment. [Figure 67] This figure shows the emission spectrum and excitation spectrum of a phosphor according to an exemplary embodiment. [Figure 68] This figure shows the temperature behavior of a phosphor according to an exemplary embodiment. [Figure 69] This figure shows simulated emission spectra of optoelectronic components according to exemplary embodiments and various comparative examples. [Figure 70] This is a secondary electron image of a phosphor according to an exemplary embodiment. [Figure 71] This is a powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 72] This figure shows the emission spectrum of a phosphor according to an exemplary embodiment. [Figure 73] Same as above [Figure 74] Same as above [Figure 75] Same as above [Figure 76A] This is a secondary electron image of a phosphor according to an exemplary embodiment. [Figure 76B] Same as above [Figure 77] This is a powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 78] This figure shows the excitation spectrum and emission spectrum of a phosphor according to an exemplary embodiment. [Figure 79]This figure shows the emission spectrum of a phosphor according to an exemplary embodiment. [Figure 80] This figure shows the emission spectra of phosphors in exemplary embodiments and various comparative examples. [Figure 81] This figure shows the temperature behavior of a phosphor according to an exemplary embodiment. [Figure 82] This figure shows simulated emission spectra of optoelectronic components according to exemplary embodiments and various comparative examples. [Figure 83] This is a secondary electron image of a phosphor according to an exemplary embodiment. [Figure 84] This is a powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 85] This figure shows the emission spectrum of a phosphor according to an exemplary embodiment. [Figure 86] This is a secondary electron image of a phosphor according to an exemplary embodiment. [Figure 87] This is a powder diffraction pattern of a phosphor according to an exemplary embodiment. [Figure 88] This figure shows the emission spectra of phosphors according to various exemplary embodiments. [Figure 89] This figure shows simulated emission spectra of optoelectronic components according to exemplary embodiments and various comparative examples. [Figure 90] This figure shows the emission spectra of phosphors according to various exemplary embodiments.

[0200] In drawings, elements that are identical, similar, or have the same effect are given the same reference numeral. The proportions of the drawings and the elements shown therein are not considered to be to exact scale. Rather, individual elements, especially the thickness of layers, may be exaggerated and shown larger for better visualization and / or better understanding.

[0201] An exemplary embodiment of phosphor 1 in Figure 1 has the following molecular formula. Li 8-2x-a MB x+c MF aMC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c ]:E (In the formula, 0≦x≦4, 0≦c≦1, 0≦z≦4, 0≦a≦8, 0≦b≦4, 0≦2x+a≦8, 0≦z+b≦4, -4≦-z+bc≦4, MB is an element or combination of elements selected from the group of divalent elements, MC is an element or combination of elements selected from the group of trivalent elements, MA is Li and / or Na, MD is an element or combination of elements selected from the group of tetravalent elements, ME is an element or combination of elements selected from the group of trivalent elements, MF is an element or combination of elements selected from the group of monovalent elements, MG is an element or combination of elements selected from the group of pentavalent elements, and E is the activating element.)

[0202] Phosphor 1 exists in the form of particles having a particle size in the range of 500 nanometers to 50 micrometers (including both ends).

[0203] Figure 2 shows a secondary electron image of the crystalline phosphor 1 according to a further exemplary embodiment. In this case, phosphor 1 has the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ It has the following characteristics. The secondary electron image is the result of scanning electron microscopy (SEM) examination at an accelerating voltage of 3 kV. The scale is shown in the lower left of Figure 2. Phosphor 1 exists as an isolated rectangular prism crystal.

[0204] Table 1 shows the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ Crystallographic data of phosphor 1 containing the activating element Ce were compiled. 3+ Because of its low concentration and low contribution to scattering, it was not included in the refinement process.

[0205] Table 1 shows the measured portion of the reciprocal lattice space across the relevant Miller indices (hkl) boundaries. Furthermore, the conventional R-value R1 of total internal reflection is shown, which represents the mean percentage deviation between the observed and calculated structural factors. The weighted R-value wR2 includes weighting coefficients that weight the reflections according to a specified scheme, particularly in accordance with the standard deviation. For a good structural model, R1 should be less than 5% and wR2 less than 10%. The Goodness of Fit (GooF) is desirable to be close to 1 and is specified as a further quality factor relating to the degree of agreement between the calculated and measured structures.

[0206] [Table 1]

[0207] Table 2 shows Li8Gd[LiSi4N4O8]:Ce 3+ The crystallographic positional parameters are shown. The Wyckoff positions, according to RWG Wyckoff, represent the symmetry of the point positions. x, y, and z represent atomic positions.

[0208] [Table 2]

[0209] The molecular formula Li8Gd[LiSi4N4O8]:Ce was determined by X-ray crystal structure analysis. 3+ The composition of phosphor 1 having was confirmed by energy-dispersive X-ray spectroscopy (SEM-EDX analysis) with the average of four measurements. SEM-EDX analysis revealed a (Gd+Ce):Si ratio of 1:4.1(5), which allowed the molecular formula Li8Gd[LiSi4N4O8]:Ce to be determined within the measurement error. 3+ The composition of phosphor 1 having the following characteristics was confirmed.

[0210] Table 3 shows the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ Crystallographic data of phosphor 1 containing the activating element Ce were compiled. 3+Because of its low concentration and low contribution to scattering, it was not included in the refinement process. Table 4 shows Li8Dy[LiSi4N4O8]:Ce 3+ The crystallographic positional parameters are shown.

[0211] [Table 3]

[0212] [Table 4]

[0213] The molecular formula Li8Dy[LiSi4N4O8]:Ce was determined by X-ray crystallography. 3+ The composition of phosphor 1 having was confirmed by energy-dispersive X-ray spectroscopy (SEM-EDX analysis) averaging two particles at an accelerating voltage of 25 kV. SEM-EDX analysis revealed a (Dy+Ce):Si ratio of 1:4.2(1), which allowed the molecular formula Li8Dy[LiSi4N4O8]:Ce to be determined within the measurement error. 3+ The composition of phosphor 1 having the following characteristics was confirmed.

[0214] Table 5 shows the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ Crystallographic data of phosphor 1 containing the activating element Ce were compiled. 3+ Because of its low concentration and low contribution to scattering, it was not included in the refinement process. Table 6 shows Li8Nd[LiSi4N4O8]:Ce 3+ The crystallographic positional parameters are shown.

[0215] [Table 5]

[0216] [Table 6]

[0217] Table 7 shows the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+Crystallographic data of phosphor 1 containing the activating element Ce were compiled. 3+ Because of its low concentration and low contribution to scattering, it was not included in the refinement process. Table 8 shows Li8Ho[LiSi4N4O8]:Ce 3+ The crystallographic positional parameters are shown.

[0218] [Table 7]

[0219] [Table 8]

[0220] Table 9 shows the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+ Crystallographic data of phosphor 1 containing the activating element Ce were compiled. 3+ Because of its low concentration and low contribution to scattering, it was not included in the refinement process. Table 10 shows Li8Pr[LiSi4N4O8]:Ce 3+ The crystallographic positional parameters are shown.

[0221] [Table 9]

[0222] [Table 10]

[0223] Table 11 shows the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ Crystallographic data of phosphor 1 containing the activating element Ce were compiled. 3+ Because of its low concentration and low contribution to scattering, it was not included in the refinement process. Table 12 shows Li8Y[LiSi4N4O8]:Ce 3+ The crystallographic positional parameters are shown.

[0224] [Table 11]

[0225] [Table 12]

[0226] Table 13 shows the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ Crystallographic data of phosphor 1 containing the activating element Ce were compiled. 3+ Because of its low concentration and low contribution to scattering, it was not included in the refinement process. Table 14 shows Li8Tm[LiSi4N4O8]:Ce 3+ The crystallographic positional parameters are shown.

[0227] [Table 13]

[0228] [Table 14]

[0229] The molecular formula Li8Tm[LiSi4N4O8]:Ce was determined by X-ray crystal structure analysis. 3+ The composition of phosphor 1 having was confirmed by energy-dispersive X-ray spectroscopy (SEM-EDX analysis) at an accelerating voltage of 20 kV. SEM-EDX analysis revealed a (Tm+Ce):Si ratio of 1:4.0(1), which allowed the molecular formula Li8Tm[LiSi4N4O8]:Ce to be determined within the measurement error. 3+ The composition of phosphor 1 having the following characteristics was confirmed.

[0230] Table 15 shows the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ Crystallographic data of phosphor 1 containing the activating element Ce were compiled. 3+ Because of its low concentration and low contribution to scattering, it was not included in the refinement process. Table 16 shows Li8Tb[LiSi4N4O8]:Ce 3+ The crystallographic positional parameters are shown.

[0231] [Table 15]

[0232] [Table 16]

[0233] Molecular formula Li8Tb[LiSi4N4O8]:Ce determined by X-ray crystal structure analysis. 3+ The composition of phosphor 1 having was confirmed by energy-dispersive X-ray spectroscopy (SEM-EDX analysis) at an accelerating voltage of 20 kV. From the SEM-EDX analysis, an average (Tb+Ce):Si ratio of 1:4.0(4) was shown for the three particles, and within the measurement error, the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ The composition of phosphor 1 having was confirmed. Averaging across two positions within the single crystal, SEM-EDX analysis at an accelerating voltage of 25kV revealed a (Tb+Ce):Si ratio of 1:3.7(1), which also allowed the molecular formula Li8Tb[LiSi4N4O8]:Ce to be determined within the measurement error. 3+ The composition of phosphor 1 having the following characteristics was confirmed.

[0234] Table 17 shows the molecular formula Li8Er[LiSi4N4O8]:Ce 3+ Crystallographic data of phosphor 1 containing the activating element Ce were compiled. 3+ Because of its low concentration and low contribution to scattering, it was not included in the refinement process. Table 18 shows Li8Er[LiSi4N4O8]:Ce 3+ The crystallographic positional parameters are shown.

[0235] [Table 17]

[0236] [Table 18]

[0237] The molecular formula Li8Er[LiSi4N4O8]:Ce was determined by X-ray crystal structure analysis. 3+ The composition of phosphor 1 having was confirmed by energy-dispersive X-ray spectroscopy (SEM-EDX analysis) at an accelerating voltage of 20 kV. From the SEM-EDX analysis, an average (Er+Ce):Si ratio of 1:4.2(3) was shown for two particles, which allowed the molecular formula Li8Er[LiSi4N4O8]:Ce to be determined within the measurement error. 3+ The composition of phosphor 1 having the following characteristics was confirmed.

[0238] Table 19 shows the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ Crystallographic data of phosphor 1 containing the activating element Ce were compiled. 3+ Because of its low concentration and low contribution to scattering, it was not included in the refinement process. Table 20 shows Li8Lu[LiSi4N4O8]:Ce 3+ The crystallographic positional parameters are shown.

[0239] [Table 19]

[0240] [Table 20]

[0241] The molecular formula Li8Lu[LiSi4N4O8]:Ce was determined by X-ray crystal structure analysis. 3+ The composition of phosphor 1 having was confirmed by energy-dispersive X-ray spectroscopy (SEM-EDX analysis) at an accelerating voltage of 25 kV. From the SEM-EDX analysis, an average (Lu+Ce):Si ratio of 1:4.0(1) was shown for the two particles, which allowed the molecular formula Li8Lu[LiSi4N4O8]:Ce to be determined within the measurement error. 3+ The composition of phosphor 1 having the following characteristics was confirmed.

[0242] Table 21 shows the molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ Crystallographic data of phosphor 1 containing the activating element Ce were compiled. 3+Because of its low concentration and low contribution to scattering, it was not included in the refinement process. Table 22 shows Li8Yb[LiSi4N4O8]:Ce 3+ The crystallographic positional parameters are shown.

[0243] [Table 21]

[0244] [Table 22]

[0245] The molecular formula Li8Yb[LiSi4N4O8]:Ce was determined by X-ray crystal structure analysis. 3+ The composition of phosphor 1 having was confirmed by energy-dispersive X-ray spectroscopy (SEM-EDX analysis) at an accelerating voltage of 25 kV. From the SEM-EDX analysis, averaging two particles, a (Yb+Ce):Si ratio of 1:4.0(2) was shown at five measurement points, which allowed the molecular formula Li8Yb[LiSi4N4O8]:Ce to be determined within the measurement error. 3+ The composition of phosphor 1 having the following characteristics was confirmed.

[0246] Table 23 shows the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ Crystallographic data of phosphor 1 containing the activating element Ce were compiled. 3+ Because of its low concentration and low contribution to scattering, it was not included in the refinement process. Table 24 shows Li8Sm[LiSi4N4O8]:Ce 3+ The crystallographic positional parameters are shown.

[0247] [Table 23]

[0248] [Table 24]

[0249] The molecular formula Li8Sm[LiSi4N4O8]:Ce was determined by X-ray crystal structure analysis. 3+ The composition of phosphor 1 having was confirmed by energy-dispersive X-ray spectroscopy (SEM-EDX analysis) at an accelerating voltage of 25 kV. From the SEM-EDX analysis, an average of four measurements showed a (Sm+Ce):Si ratio of 1:4.0(3), and within the measurement error, the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ The composition of phosphor 1 having the following characteristics was confirmed.

[0250] Figures 3 to 8 show schematic cross-sectional views of the crystal structure of the host structure 2 of phosphor 1 according to an exemplary embodiment. Phosphor 1 has the molecular formula Li8MC[LiSi4N4O8]:E, where MC = Gd, Dy, Ho, Pr, Nd, Tm, Tb, Er, Lu, Yb, Sm, or Y, and E = Ce 3+ ,EU 2+ and / or Nd 3+ That is the case.

[0251] Figure 3 shows the molecular formula Li8MC[LiSi4N4O8]:E (where MC = Gd, Dy, Ho, Pr, Nd, Tm, Tb, Er, Lu, Yb, Sm or Y, and E = Ce 3+ ,EU 2+ and / or Nd 3+ A cross-section of the host structure 2 of the phosphor 1 having ( is shown) is shown roughly along the

[0100] direction. The cross-section shows the first layer 3 and MC atoms 4. The first layer 3 is composed of SiO2N2 tetrahedra 31 and LiO4 tetrahedra 32 connected at the corners. The first layer 3 is sometimes referred to as the lysilicate layer.

[0252] Figure 4 shows the first layer 3 along the

[0001] direction. Simultaneously, the unit cell of the crystal structure of the host structure 2 is shown by a black line. The SiO2N2 tetrahedron 31 forms a tetraring 5, which gives rise to a channel 6 along the c axis. The MC atom 4 is located within the channel 6. In the first layer 3, all faces of the LiO4 tetrahedron 32 are connected at the corners.

[0253] Li8MC[LiSi4N4O8]:E (where MC = Gd, Dy, Ho, Pr, Nd, Tm, Tb, Er, Lu, Yb, Sm or Y, and E = Ce 3+ ,EU 2+ and / or Nd 3+ The coordination sphere of MC atom 4 of (Li8MC[LiSi4N4O8]:E) is shown in Figures 5 and 6 from different directions. Figure 5 shows the coordination sphere along the

[0001] direction, and Figure 6 shows the coordination sphere along approximately the

[0100] direction. In this case, MC atom 4 is surrounded in a square antiprism by four O atoms 7 and four N atoms 8. Therefore, MC atom 4 is 8-coordinate. At opposite corners of the square antiprism 41 surrounding MC atom 4, one O atom 7 and one N atom 8 face each other. At the corners of the square face of the square antiprism 41 along the c-axis, there are either only O atoms 7 or only N atoms 8. If the composition of the phosphor is different from Li8MC[LiSi4N4O8]:E, the occupancy of O atoms and / or N atoms may change. It is possible that some of the N atoms 8 are in the positions of the O atoms 7, and vice versa.

[0254] Activating element E, in this case Ce 3+ However, we assume that, depending on its charge and ionic radius, it can occupy the position of MC atom 4 in the crystal structure of host structure 2.

[0255] Figure 7 shows the molecular formula Li8MC[LiSi4N4O8]:E (where MC = Gd, Dy, Ho, Pr, Nd, Tm, Tb, Er, Lu, Yb, Sm or Y, and E = Ce 3+ ,EU 2+ and / or Nd 3+ The second layer 9 of the host structure 2 of phosphor 1 having ( is shown). The second layer 9 is shown in the ab plane, i.e., along the

[0001] direction. At the same time, the unit cell of the crystal structure of host structure 2 is shown by a black line.

[0256] The second layer 9, in this case, consists of Li with 5 coordination. In other words, the coordination number of Li is 5. The second layer 9 contains triangular LiO3N2 bipyramids 92 and triangular LiO4N bipyramids 91. The triangular bipyramids 91 and 92 can also be described as square pyramids. Alternatively, the polyhedron surrounding the Li atoms can be described, for example, as a distorted tetrahedron with additional anions further away. In the alternative description of the environment of the Li atoms, the coordination number of Li remains 5.

[0257] The triangular LiO3N2 bipyramids 92 and triangular LiO4N bipyramids 91 are connected by their edges. Furthermore, the four triangular LiO3N2 bipyramids 92 and four triangular LiO4N bipyramids 91 are arranged such that the channels 6 in which the MC atoms 4 are located along the c-axis are continuous from the first layer 3 in the center.

[0258] The first layer 3 and the second layer 9 have the molecular formula Li8MC[LiSi4N4O8]:E (where MC = Gd, Dy, Ho, Pr, Nd, Tm, Tb, Er, Lu, Yb, Sm or Y, and E = Ce 3+ ,EU 2+ and / or Nd 3+ The phosphor 1, having the following properties, is arranged alternately in the crystal structure of the host structure 2. In other words, there is a second layer 9 between two first layers 3. The first layer 3 and the second layer 9 are connected to each other via common corners and edges. In this way, a three-dimensional network is formed. The phosphor 1 is sometimes referred to as lithium oxonitoridorisilicate.

[0259] The first layer 3 and the second layer 9 aligned in the

[0001] direction are shown in Figure 8. Figure 9 shows five alternating repeating layers 3 and 9 aligned in the

[0010] direction. In Figures 8 and 9, the unit cell of the crystal structure of the host structure 2 is shown by a black line.

[0260] Figure 10 shows the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+The Rietveld refined powder diffraction pattern R1 of the host structure 2 of phosphor 1 according to an exemplary embodiment is shown. The powder diffraction pattern was recorded using the Mo-Kα1 line. The relative intensity I is plotted against the diffraction angle 2θ (degrees) in arbitrary units. The × marks on the powder diffraction pattern indicate measured values ​​G1. The white solid line with a black border indicates the calculated powder diffraction pattern G2. Line G3 is the difference between the values ​​of curve G2 and curve G1. In other words, this is the difference diagram G3. The black marks G4 correspond to the theoretical reflection positions of Li8Gd[LiSi4N4O8] (top), Li4SiO4 (center), and Gd2O3 (bottom). The theoretical reflection position of Li8Gd[LiSi4N4O8] is given by the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ The calculation was performed using the aforementioned crystal structure of the host structure 2 of the phosphor having [the specified element].

[0261] The results of Rietveld refinement are summarized in Table 25. Through Rietveld refinement, the powder sample was refined to the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ In addition to phosphor 1, which contains [specific material], it is shown to contain Li4SiO4 and Gd2O3. However, their proportions are very small.

[0262] [Table 25]

[0263] With the activation element E, the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ An exemplary embodiment of phosphor 1 having the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ Figure 11 shows the excitation spectrum A1 and emission spectrum E1 of a powder sample of phosphor 1 having the following molecular formula: Li8Gd[LiSi4N4O8]:Ce 3+ The phosphor 1 having a maximum emission λ at approximately 517 nanometers max It has the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+Further optical data for phosphor 1, which has the properties of [the specified material], are summarized in Table 26.

[0264] [Table 26]

[0265] Figure 12 shows the emission spectra E1, E1a, and V1 of phosphor 1. Molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ The emission spectrum E1 of a powder sample of an exemplary embodiment of phosphor 1 having the molecular formula Li8Gd[LiSi4N4O8]:Ce was recorded at an excitation wavelength of 430 nanometers. 3+ The emission spectrum E1a of a single crystal of an exemplary embodiment of phosphor 1 having the molecular formula Lu3(Al / Ga)5O was recorded at an excitation wavelength of 448 nanometers. 12 :Ce 3+ The emission spectrum V1 of a comparative example of phosphor 1 having was recorded at an excitation wavelength of 448 nanometers. From the emission spectrum, Li8Gd[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ The emission of these materials is shown to be spectrally equivalent. However, phosphor 1 has an improved photometric radiative equivalent (LER). Li8Gd[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ Due to the similar luminescence, Lu3(Al / Ga)5O 12 :Ce 3+ Li8Gd[LiSi4N4O8]:Ce 3+ It can be replaced with this.

[0266] Furthermore, Li8Gd[LiSi4N4O8]:Ce 3+ The luminescence of the single crystal Li8Gd[LiSi4N4O8]:Ce 3+ Figure 12 shows that this is representative of the powder sample. Li8Gd[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce3+ The selected optical data is summarized in Table 27.

[0267] [Table 27]

[0268] Molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ Figure 13 shows the temperature behavior of an exemplary embodiment of phosphor 1 having the following: The x-axis represents temperature T (°C), and the y-axis represents the quotient of the integrated intensity between the emission at the current temperature and the emission at 25°C. The step size is 25°C. The maximum temperature is 225°C. Molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ The phosphor 1 exhibits a decrease in luminescence intensity with increasing temperature. However, at a temperature of approximately 100°C, which corresponds to the typical operating temperature of optoelectronic components, the relative luminescence intensity is still approximately 85%.

[0269] Figure 14 shows the molecular formula Li8MC[LiSi4N4O8]:Ce in the range of 465 nanometers to 765 nanometers (including both ends). 3+ Emission spectra E1 to E3 of phosphor 1 according to various exemplary embodiments are shown. Phosphor 1 was excited at a wavelength of 448 nanometers. In phosphor 1 based on emission spectrum E1, MC=Gd. In phosphor 1 based on emission spectrum E2, MC=Dy. In phosphor 1 based on emission spectrum E3, MC=Y.

[0270] Figure 15A shows the molecular formula Li8MC[LiSi4N4O8]:Ce in the range of 465 nanometers to 865 nanometers (including both ends). 3+ Emission spectra E4 and E5 of phosphor 1 according to various exemplary embodiments are shown. Phosphor 1 was excited at a wavelength of 448 nanometers. For phosphor 1 based on emission spectrum E4, MC=Ho. For phosphor 1 based on emission spectrum E5, MC=Pr.

[0271] Figure 15B shows the molecular formula Li8MC[LiSi4N4O8]:Ce in the range of 600 nanometers to 1600 nanometers (including both ends). 3+ The emission spectra E6 of phosphor 1 according to various exemplary embodiments are shown. Here, phosphor 1 was excited at a wavelength of 450 nanometers. In phosphor 1 based on emission spectrum E6, MC=Nd.

[0272] The emission spectra E2-E6 are based on crude preparations of each phosphor 1, which may contain impurities.

[0273] In the case of MC=Ho, Pr and Nd, the activating element is Ce. 3+ It can act as a sensitizer. As a result, additional emission peaks are generated in the emission spectra E4-E6 of Figures 15A and 15B, compared to the emission spectra E1-E3 of Figure 14. The additional emission peaks are caused by the f→f transition of MC.

[0274] Phosphor 1, whose molecular formula is MC=Ho and Pr, emits light in the green to yellow range and the orange to red range of the electromagnetic spectrum. 3+ Phosphors containing Li8Nd[LiSi4N4O8]:Ce show almost no emission in the green to yellow range of the electromagnetic spectrum. 3+ Regarding this, the emission is mainly observed in the infrared region of the electromagnetic spectrum.

[0275] Figure 16 schematically shows the various steps of the method for producing phosphor 1. In step S1 of the first method, the reactants are prepared. For example, the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ The reactants for synthesizing phosphor 1 having the following are Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Gd, Gd2O3, GdF3, Ce, CeO2, CeF3 and / or CeN. For example, molecular formula Li8Dy[LiSi4N4O8]:Ce 3+The reactants for synthesizing phosphor 1 having the following are Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Dy, Dy2O3, DyF3, Ce, CeO2, CeF3 and / or CeN. Molecular formula Li8Ho[LiSi4N4O8]:Ce 3+ For the synthesis of phosphor 1 having the following, the reactants include, for example, Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Ho, Ho2O3, HoF3, Ce, CeO2, CeF3 and / or CeN. For example, molecular formula Li8Pr[LiSi4N4O8]:Ce 3+ The reactants for synthesizing phosphor 1 having the following are Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Pr, Pr2O3, and Pr6O 11 , including PrF3, Ce, CeO2, CeF3 and / or CeN. For example, molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ The reactants for synthesizing phosphor 1 having the following are Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Nd, Nd2O3, NdF3, Ce, CeO2, CeF3 and / or CeN. Molecular formula Li8Y[LiSi4N4O8]:Ce 3+ For the synthesis of phosphor 1 having the following, the reactants include, for example, Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Y, Y2O3, YF3, Ce, CeO2, CeF3 and / or CeN. For example, molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ The reactants for synthesizing phosphor 1 having the following include Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Gd2O3, GdF3, Ce, CeO2, CeF3, CeN, NdF3 and / or Nd2O3. For example, molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ The reactants for synthesizing phosphor 1 having the following are Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Tm, Tm2O3, TmF3, Ce, CeO2, CeF3 and / or CeN. For example, molecular formula Li8Tb[LiSi4N4O8]:Ce3+ The reactants for synthesizing phosphor 1 having the following are Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Tb, Tb2O3, TbF3, Ce, CeO2, CeF3 and / or CeN. Molecular formula Li8Er[LiSi4N4O8]:Ce 3+ For the synthesis of phosphor 1 having the following, the reactants include, for example, Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Er, Er2O3, ErF3, Ce, CeO2, CeF3 and / or CeN. For example, molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ The reactants for synthesizing phosphor 1 having the following are Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Lu, Lu2O3, LuN, LuF3, Ce, CeO2, CeF3 and / or CeN. For example, molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ The reactants for synthesizing phosphor 1 having the following are Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Yb, Yb2O3, YbF3, Ce, CeO2, CeF3 and / or CeN. Molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ For the synthesis of phosphor 1 having the following, the reactants include, for example, Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Sm, Sm2O3, SmF3, Ce, CeO2, CeF3 and / or CeN. Molecular formula Li8Y[LiSi4N4O8]:Eu 2+ For the synthesis of phosphor 1 having, for example, the reactants are Eu 2+ Includes Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Y, Y2O3, YF3, and EuF2.

[0276] The reactants are mixed in step S2 of the second method to form a reactant mixture. In addition to the reactants, the reactant mixture may also contain, for example, up to 5% by weight of flux based on the weight of the reactants used. The reactant mixture is transferred to a W crucible, a Ni crucible, or a Ta tube.

[0277] In the third method step S3, the reactant mixture is heated in a flow-tube furnace, high-frequency furnace, or tubular furnace. Heating is carried out to a first temperature of at least 920°C. This temperature is maintained for a period of 4 to 20 hours (including both ends). Then, it is cooled to a second temperature of less than 600°C at a cooling rate of 6°C / hour or less. Subsequently, it is cooled to a third temperature of less than 200°C at a cooling rate of less than 20°C / hour. Then, the oven is switched off.

[0278] Li8Gd[LiSi4N4O8]:Ce 3+ creation Molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ The phosphor 1 contains reactants Si3N4, SiO2, Li2O, and Gd2O3 in a molar ratio of 2:2:10.5:1, a flux of LiF or Li, and an activating element Ce 3+ It is prepared from CeF3 as a reactant. Activated element Ce 3+ It has a content in the range of 0.01 mol% to 10 mol% (including both ends) relative to Gd, particularly in the range of 0.1 mol% to 5 mol% (including both ends). Li8Gd[LiSi4N4O8]:Ce 3+ The precise weights required for its construction are summarized in Table 28.

[0279] Before synthesis, the reactants are closely mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. The material is then cooled to a second temperature of about 500°C at a cooling rate of about 2°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the furnace is switched off.

[0280] [Table 28]

[0281] Li8Gd[LiSi4N4O8]:Ce3+ ,Nd 3+ creation Molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ The phosphor 1 having reactants Si3N4, SiO2, Li2O, and Gd2O3 in a molar ratio of 2:2:10.5:0.9, a flux of LiF or Li, optionally up to 5% by weight, and the activating element Ce 3+ and Nd 3+ It is prepared from CeF3 and NdF3 as reactants. Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ The exact weights for the preparation are summarized in Table 29. The synthesis is Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ I did as described below.

[0282] [Table 29]

[0283] Li8Dy[LiSi4N4O8]:Ce 3+ creation Molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ The phosphor 1 having reactants Si3N4, SiO2, Li2O, and DyF3 in a molar ratio of 2:2:10.5:1, a flux of LiF or Li, optionally up to 5% by weight, and the activating element Ce 3+ It is prepared from CeF3 as a reactant. Activated element Ce 3+ It has a content in the range of 0.01 mol% to 10 mol% (including both ends) relative to Dy, particularly in the range of 0.1 mol% to 5 mol% (including both ends). Li8Dy[LiSi4N4O8]:Ce 3+ The precise weights required for production are summarized in Table 30.

[0284] Before synthesis, the reactants are closely mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. The material is then cooled to a second temperature of about 500°C at a cooling rate of about 2°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the furnace is switched off.

[0285] [Table 30]

[0286] Li8Ho[LiSi4N4O8]:Ce 3+ creation Molecular formula Li8Ho[LiSi4N4O8]:Ce 3+ The phosphor 1 having reactants Si3N4, SiO2, Li2O, and HoF3 in a molar ratio of 2:2:10.5:1, a flux of LiF or Li, optionally up to 5% by weight, and the activating element Ce 3+ It is prepared from CeF3 as a reactant. Activated element Ce 3+ It has a content in the range of 0.01 mol% to 10 mol% (including both ends) relative to Ho, particularly in the range of 0.1 mol% to 5 mol% (including both ends). Li8Ho[LiSi4N4O8]:Ce 3+ The precise weights required for production are summarized in Table 31.

[0287] Before synthesis, the reactants are closely mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. Then, the material is cooled to a second temperature of about 500°C at a cooling rate of about 2°C / hour or about 1°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the furnace is switched off.

[0288] [Table 31]

[0289] Li8Pr[LiSi4N4O8]:Ce 3+ creation Molecular formula Li8Pr[LiSi4N4O8]:Ce 3+ The phosphor 1 having reactants Si3N4, SiO2, Li2O, and Pr6O in a molar ratio of 2:2:10.5:0.3 11 , in some cases, fluxes such as LiF or Li up to 5% by weight, and the activating element Ce 3+ It is prepared from CeF3 as a reactant. Activated element Ce 3+ It has a content in the range of 0.01 mol% to 10 mol% (including both ends) relative to Pr, and especially in the range of 0.1 mol% to 5 mol% (including both ends). Li8Pr[LiSi4N4O8]:Ce 3+ The precise weights required for its construction are summarized in Table 32.

[0290] Before synthesis, the reactants are closely mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. Then, the material is cooled to a second temperature of about 500°C at a cooling rate of about 2°C / hour or about 1°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the furnace is switched off.

[0291] [Table 32]

[0292] Li8Nd[LiSi4N4O8]:Ce 3+ creation Molecular formula Li8Nd[LiSi4N4O8]:Ce 3+The phosphor 1 having reactants Si3N4, SiO2, Li2O, and Nd2O3 in a molar ratio of 2:2:10.5:0.9, a flux of LiF or Li, optionally up to 5% by weight, and the activating element Ce 3+ It is prepared from CeF3 as a reactant. Activated element Ce 3+ It has a content in the range of 0.01 mol% to 10 mol% (including both ends) relative to Nd, particularly in the range of 0.1 mol% to 5 mol% (including both ends). Li8Nd[LiSi4N4O8]:Ce 3+ The precise weights required for its construction are summarized in Table 33.

[0293] Before synthesis, the reactants are closely mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. Then, the material is cooled to a second temperature of around 500°C at a cooling rate of about 2°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the furnace is switched off.

[0294] [Table 33]

[0295] Li8Y[LiSi4N4O8]:Ce 3+ creation Molecular formula Li8Y[LiSi4N4O8]:Ce 3+ The phosphor 1 having reactants Si3N4, SiO2, Li2O, and Y2O3 in a molar ratio of 2:2:10.5:0.9, a flux of LiF or Li, optionally up to 5% by weight, and the activating element Ce 3+ It is prepared from CeF3 as a reactant. Activated element Ce 3+ It has a content of Y in the range of 0.01 mol% to 10 mol% (including both ends), and especially in the range of 0.1 mol% to 5 mol% (including both ends). Li8Y[LiSi4N4O8]:Ce 3+ The precise weights required for production are summarized in Table 34.

[0296] Before synthesis, the reactants are closely mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. Then, the material is cooled to a second temperature of around 500°C at a cooling rate of about 2°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the furnace is switched off.

[0297] [Table 34]

[0298] Li8Tm[LiSi4N4O8]:Ce 3+ creation Molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ The phosphor 1 having reactants Si3N4, SiO2, Li2O, and Tm2O3 in a molar ratio of 2:2:10.5:0.9, a flux of LiF or Li, and an activating element Ce 3+ It is prepared from CeF3 as a reactant. Activated element Ce 3+ It has a content in the range of 0.01 mol% to 15 mol% (including both ends) relative to Tm, and particularly in the range of 0.1 mol% to 10 mol% (including both ends). Li8Tm[LiSi4N4O8]:Ce 3+ The exact weights required for production are summarized in Table 35.

[0299] Before synthesis, the reactants are closely mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. Then, the material is cooled to a second temperature of around 500°C at a cooling rate of about 2°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the furnace is switched off.

[0300] [Table 35]

[0301] Li8Tb[LiSi4N4O8]:Ce 3+ creation Molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ The phosphor 1 having reactants Si3N4, SiO2, Li2O, and Tb2O3 in a molar ratio of 2:2:10.5:0.9, a flux of LiF or Li, optionally up to 5% by weight, and the activating element Ce 3+ It is prepared from CeF3 as a reactant. Activated element Ce 3+ It has a content in the range of 0.01 mol% to 10 mol% (including both ends) relative to Tb, particularly in the range of 0.1 mol% to 5 mol% (including both ends). Li8Tb[LiSi4N4O8]:Ce 3+ The precise weights required for its construction are summarized in Table 36.

[0302] Before synthesis, the reactants are closely mixed in a glove box under an inert gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. Next, the material is cooled to a second temperature of around 500°C at a cooling rate of about 2°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the furnace is switched off.

[0303] [Table 36]

[0304] Li8Er[LiSi4N4O8]:Ce 3+ creation Molecular formula Li8Er[LiSi4N4O8]:Ce 3+The phosphor 1 contains reactants Si3N4, SiO2, Li2O, and Er2O3 in a molar ratio of 2:2:10.5:0.9, a flux of LiF or Li, and an activating element Ce 3+ It is prepared from CeF3 as a reactant. Activated element Ce 3+ It has a content in the range of 0.01 mol% to 15 mol% (including both ends) relative to Er, particularly in the range of 0.1 mol% to 5 mol% (including both ends). Li8Er[LiSi4N4O8]:Ce 3+ The exact weights required for production are summarized in Table 37.

[0305] Before synthesis, the reactants are closely mixed in a glove box under an inert gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. Then, the material is cooled to a second temperature of about 500°C at a cooling rate of about 2°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the furnace is switched off.

[0306] [Table 37]

[0307] Li8Lu[LiSi4N4O8]:Ce 3+ creation Molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ The phosphor 1 having the following reactants Si3N4, SiO2, Li2O, and Lu2O3 in a molar ratio of 2.15:1.55:10.5:0.8, a flux of LiF or Li, and an activating element Ce 3+ It is prepared from CeF3 as the starting material. Activated element Ce 3+ It has a content in the range of 0.01 mol% to 15 mol% (including both ends) relative to Lu, and especially in the range of 0.1 mol% to 5 mol% (including both ends). Li8Lu[LiSi4N4O8]:Ce 3+The precise weights required for its construction are summarized in Table 38.

[0308] Before synthesis, the reactants are closely mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. Then, the material is cooled to a second temperature of around 500°C at a cooling rate of about 1°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the oven is switched off.

[0309] [Table 38]

[0310] Li8Yb[LiSi4N4O8]:Ce 3+ creation Molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ The phosphor 1 having reactants Si3N4, SiO2, Li2O, and Yb2O3 in a molar ratio of 2:2:10.5:0.9, a flux of LiF or Li, and an activating element Ce 3+ It is prepared from CeF3 as a reactant. Activated element Ce 3+ It has a content in the range of 0.01 mol% to 15 mol% (including both ends) relative to Yb, particularly in the range of 0.1 mol% to 5 mol% (including both ends). Li8Yb[LiSi4N4O8]:Ce 3+ The precise weights required for its construction are summarized in Table 39.

[0311] Before synthesis, the reactants are closely mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. Next, the material is cooled to a second temperature of around 500°C at a cooling rate of about 2°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the oven is switched off.

[0312] [Table 39]

[0313] Li8Sm[LiSi4N4O8]:Ce 3+ creation Molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ The phosphor 1 having reactants Si3N4, SiO2, Li2O, and Sm2O3 in a molar ratio of 2:2:10.5:0.85, a flux of LiF or Li, optionally up to 5% by weight, and the activating element Ce 3+ It is prepared from CeF3 as a reactant. Activated element Ce 3+ It has a content in the range of 0.01 mol% to 15 mol% (including both ends) relative to Sm, and particularly in the range of 0.1 mol% to 5 mol% (including both ends). Li8Sm[LiSi4N4O8]:Ce 3+ The precise weights required for production are summarized in Table 40.

[0314] Before synthesis, the reactants are closely mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. The material is then cooled to a second temperature of about 500°C at a cooling rate of about 1°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the furnace is switched off.

[0315] [Table 40]

[0316] Figure 17 shows a first exemplary embodiment of the optoelectronic component 10. In this case, the optoelectronic component 10 comprises a radiation-emitting semiconductor chip 11 having an epitaxially grown semiconductor layer sequence, which includes an active region 111. The active region 111 is designed to generate electromagnetic radiation in a first wavelength range. The radiation-emitting semiconductor chip 11 emits electromagnetic radiation in the first wavelength range through a radiation exit surface. For example, the radiation exit surface is parallel to the main extending surface of the radiation-emitting semiconductor chip 11. In this case, the radiation-emitting semiconductor chip 11 emits electromagnetic radiation in the blue wavelength range of the electromagnetic spectrum. For example, the radiation-emitting semiconductor chip emits electromagnetic radiation at a main wavelength of about 455 nanometers or about 445 nanometers λ dom It emits electromagnetic radiation. The radiation-emitting semiconductor chip 11 is, for example, a micro-LED.

[0317] In this case, the optoelectronic component 10 further comprises a conversion element 12. The conversion element 12 is in direct mechanical contact with the radiation-emitting semiconductor chip 11. The conversion element 12 is composed of Li 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c The present invention includes a phosphor 1 having ]:E, particularly a phosphor 1 having the molecular formula Li8MC[LiSi4N4O8]:E (where MC = Gd, Y, Pr, Nd, Ho, Tm, Tb, Er, Lu, Yb, Sm, or Dy). The phosphor 1 converts electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range that is at least partially different from the first wavelength range.

[0318] The conversion element 12 and the radiation-emitting semiconductor chip 11 are arranged inside the housing 13. The housing 13 has, for example, a reflective surface.

[0319] In this case, the conversion element 12 further includes a matrix material 121 in which particles of phosphor 1 are embedded. The conversion element 12 is formed as a layer of uniform thickness. The matrix material 121 is an inorganic or organic matrix material. The conversion element can be formed as a platelet. The conversion element 12 can also be formed as a ceramic and may contain little to no matrix material 121.

[0320] In particular, the matrix material 121 consists of a material selected from the group consisting of glass such as silicate glass, water glass or quartz glass, and polymers such as polystyrene, polysilazane, polymethyl methacrylate, polycarbonate, polyacrylate, polytetrafluoroethylene, polyvinyl, silicone resin, silicone, polysiloxane, epoxy resin, and combinations thereof. The silicone and / or polysiloxane may be fluorinated. The conversion element 12 may be configured for complete or partial conversion. Furthermore, the conversion element 12 may include additional phosphors 14 and / or scattering particles (not shown). The additional phosphors 14 and scattering particles are, for example, uniformly mixed with the phosphor 1.

[0321] The optoelectronic component 10 is suitable, for example, as a light source. In the case of partial conversion, the optoelectronic component 10 emits mixed light of electromagnetic radiation in a first wavelength range and a second wavelength range. In the case of complete conversion, the optoelectronic component 10 emits only electromagnetic radiation in the second wavelength range.

[0322] The second exemplary embodiment of the optoelectronic component 10 shown in Figure 18 includes an intermediate layer 15 between the radiation-emitting semiconductor chip 11 and the conversion element 12, compared to the first exemplary embodiment of the optoelectronic component 10. In other respects, the first and second exemplary embodiments of the optoelectronic component 10 have the same structure.

[0323] The intermediate layer 15 is configured, for example, as a support and / or adhesive layer for the conversion element 12. The support plays a role in mechanically stabilizing the conversion layer 12 with an organic matrix material. This is advantageous, for example, when fabricating the conversion element 12. The support is made of a transparent material. The adhesive layer includes, for example, a silicone resin and / or an epoxy resin.

[0324] Figure 19 shows a third exemplary embodiment of the optoelectronic component 10. The radiation-emitting semiconductor chip 11 and housing 13 are the same as the corresponding elements of the optoelectronic component 10 in the first exemplary embodiment. However, compared to the first exemplary embodiment, the conversion element 12 is formed as a conversion cast 16 rather than as a layer of uniform thickness. The conversion element 12 includes a phosphor 1 and optionally further phosphors 14 and / or scattering particles (not shown). The conversion element 12 conformably surrounds the radiation-emitting semiconductor chip 11 on at least two sides. The conversion element 12 further includes a matrix material 121, for example, polysiloxane or epoxy resin.

[0325] Figure 20 shows a fourth exemplary embodiment of the optoelectronic component 10. Compared to the optoelectronic component 10 of the first exemplary embodiment, the conversion element is positioned away from the radiation-emitting semiconductor chip 11. However, the conversion element 12 and the radiation-emitting semiconductor chip 11 are formed similarly to the corresponding elements of the first exemplary embodiment. A non-converting cast body 17 is positioned between the conversion element 12 and the radiation-emitting semiconductor chip 11. The conversion element 12 is flush with the housing 13.

[0326] The non-converting cast body 17 surrounds the radiation-emitting semiconductor chip 11 in a shape-fitting manner, at least partially. The radiation-emitting semiconductor chip 11 is in direct mechanical contact with the non-converting cast body 17. The non-converting cast body 17 has a transmittance of at least 90% to electromagnetic radiation in a first wavelength range.

[0327] Figure 21 shows a fifth exemplary embodiment of the optoelectronic component 10. This optoelectronic component 10 has the same structure as the optoelectronic component 10 of the first exemplary embodiment. However, the conversion element 12 includes an additional phosphor 14 located in a separate layer. In other words, phosphor 1 and the additional phosphor 14 are not mixed. The additional phosphor 14 has the molecular formula Li 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c The molecular formula may be Li8MC[LiSi4N4O8]:E, in particular. However, phosphor 1 and further phosphor 14 have different compositions. Alternatively, further phosphor 14 may follow a different molecular formula. Further phosphor 14 is embedded in the same matrix material 121 as phosphor 1. However, further phosphor 14 may also be embedded in a different matrix material 121. Further phosphor 14 may contain a mixture of different further phosphors.

[0328] In this case, the layer containing the additional phosphor 14 is placed on top of the layer containing phosphor 1. In other words, the layer containing phosphor 1 is placed between the radiation-emitting semiconductor chip 11 and the layer containing the additional phosphor 14. However, the two layers can also be placed in reverse order; that is, the layer containing phosphor 1 can be placed on top of the layer containing the additional phosphor 14.

[0329] Further phosphors 14 convert electromagnetic radiation in a first wavelength range into electromagnetic radiation in a third wavelength range. The third wavelength range is at least partially different from the first and second wavelength ranges. Thus, the optoelectronic component 10 emits mixed light containing electromagnetic radiation in the first, second, and third wavelength ranges.

[0330] The optoelectronic component 10 according to the sixth exemplary embodiment shown in Figure 22 has the same structure as the optoelectronic component 10 of the fourth exemplary embodiment. However, in this case, the optoelectronic component 10 includes a conversion cast 16 instead of a non-conversion cast 17. In this case, the conversion cast 16 includes an additional phosphor 14 and a matrix material 121. The conversion cast 16 forms part of the conversion element 12. The arrangement of the phosphor 1 and the additional phosphor 14 in the conversion cast 16 and the layer above it can also be interchanged. The conversion cast 16 and the matrix material 121 of the upper layer may be the same or different.

[0331] The conversion elements 12 of the fifth and sixth exemplary embodiments of the optoelectronic component 10 in Figures 21 and 22 can be configured for complete or partial conversion. Therefore, the optoelectronic component 10 of the fifth and sixth exemplary embodiments can emit electromagnetic radiation in the first to third wavelength range or in the second and third wavelength ranges.

[0332] Figures 23 to 25 show simulated emission spectra of optoelectronic component 10, LED-A1, LED-A2, LED-A3, LED-V1, LED-V2, and LED-V3, according to various exemplary embodiments and comparative examples. Figure 23 shows the simulated emission spectra of LED-A1 and LED-V1. Figure 24 shows the emission spectra of LED-A2 and LED-V2, and Figure 25 shows the emission spectra of LED-A3 and LED-V3.

[0333] Each corresponding optoelectronic component 10 comprises a radiation-emitting semiconductor chip 11 and a conversion element 12. The conversion element 12 in an exemplary embodiment having simulated emission spectra LED-A1, LED-A2, and LED-A3 has the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ A phosphor 1 having the molecular formula (Sr,Ca)AlSiN3:Eu 2+It includes at least one further phosphor 14 (SCASN1~SCASN3) having the molecular formula Lu3(Al,Ga)5O 12 :Ce 3+ A phosphor LuAGaG (containing 25% Ga relative to the total of Al and Ga, and approximately 2% Ce relative to Lu) and a phosphor with the molecular formula (Sr,Ca)AlSiN3:Eu 2+ It comprises at least one further phosphor 14 (SCASN1~SCASN3) having the molecular formula (Sr,Ca)AlSiN3:Eu 2+ At least one further phosphor 14 having the above characteristics emits light in the orange or red wavelength range of the electromagnetic spectrum.

[0334] The radiation-emitting semiconductor chip 11 emits blue light. Furthermore, the ratio of phosphors 1 and 14 is adjusted to achieve a specific color coordinate and a specific color rendering index (CRI). The simulation results are summarized in Table 41.

[0335] [Table 41]

[0336] From the simulation results, the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ It is shown that using phosphor 1, the same chromaticity coordinates and color temperature are achieved in all three exemplary embodiments, as in the comparative examples. Furthermore, the same or very similar color rendering values ​​are achieved. Therefore, the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ The phosphor 1 having the molecular formula Li8Gd[LiSi4N4O8]:Ce is very suitable for achieving optoelectronic components 10 with high color rendering at different color temperatures, different CRI target values, and different emission wavelengths of radiation-emitting semiconductor chips 12. Surprisingly, the LER value of the exemplary embodiment is also higher than that of the comparative example. For this reason, the phosphor 1 having the molecular formula Li8Gd[LiSi4N4O8]:Ce is very suitable for achieving optoelectronic components 10 with high color rendering at different color temperatures, different CRI target values, and different emission wavelengths of radiation-emitting semiconductor chips 12. 3+Phosphors containing [specific compound] exhibit improved spectral efficiency upon application. Molecular formula: Li8Dy[LiSi4N4O8]:Ce 3+ Using the phosphor, results nearly identical to those shown in Table 41 can be obtained.

[0337] Figure 26 shows the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ The Rietveld refined powder diffraction pattern R2 of the host structure 2 of phosphor 1 according to an exemplary embodiment is shown. The powder diffraction pattern was recorded using the Mo-Kα1 line. The relative intensity I is plotted against the diffraction angle 2θ (degrees) in arbitrary units. The × marks on the powder diffraction pattern indicate measured values ​​G1. The solid white line with a black border indicates the calculated powder diffraction pattern G2. Line G3 is the difference between the values ​​of curve G2 and curve G1. In other words, this is the difference diagram G3. The black marks G4 correspond to the theoretical reflection positions of Li8Dy[LiSi4N4O8] (top), Li4SiO4 (center), and Dy2O3 (bottom). The theoretical reflection position of Li8Dy[LiSi4N4O8] is given by the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ The calculation was performed using the aforementioned crystal structure of the host structure 2 of the phosphor having [the specified element].

[0338] [Table 42]

[0339] From Rietveld analysis, the investigated Li8Dy[LiSi4N4O8]:Ce has the crystal structure shown in Figures 3 to 9. 3+ The single crystal is Li8Dy[LiSi4N4O8]:Ce 3+ This is shown to be representative of the main phase of the powder sample. However, the powder sample also shows that the secondary phase is present in a smaller proportion.

[0340] With the activation element E, the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ An exemplary embodiment of phosphor 1 having the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+Figure 27 shows the excitation spectrum A2 and emission spectrum E2a of a powder sample of phosphor 1 having the following characteristics: Excitation spectrum A2 is based on the maximum value of the raw data of the emission curve, located at approximately 510 nanometers. Emission spectrum E2a was recorded at an excitation wavelength of 435 nanometers. Molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ The phosphor 1 having a maximum emission λ at approximately 529 nanometers max It has the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ Further optical data for phosphor 1, which has the properties of [the specified material], are summarized in Table 43.

[0341] [Table 43]

[0342] Figure 28 shows the emission spectra E2b and V1 of phosphor 1. Molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ The emission spectrum E2b of a single crystal of an exemplary embodiment of phosphor 1 having the molecular formula Lu3(Al / Ga)5O was recorded at an excitation wavelength of 448 nanometers. 12 :Ce 3+ The emission spectrum V1 of a single particle of comparative example of phosphor 1 having was recorded at an excitation wavelength of 448 nanometers. From the emission spectrum, Li8Dy[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ The emission of these materials is shown to be spectrally equivalent. However, phosphor 1 has a slightly improved photometric radiative equivalent (LER). Li8Dy[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ Due to the similar luminescence, Lu3(Al / Ga)5O 12 :Ce 3+ Li8Dy[LiSi4N4O8]:Ce 3+ It can be replaced with this.

[0343] Li8Dy[LiSi4N4O8]:Ce3+ and Lu3(Al / Ga)5O 12 :Ce 3+ The selected optical data is summarized in Table 44.

[0344] [Table 44]

[0345] Molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ Figure 29 shows the temperature behavior of an exemplary embodiment of phosphor 1 having the following: The x-axis represents temperature T (°C), and the y-axis represents the quotient of the integrated intensity between the emission at the current temperature and the emission at 25°C. The step size is 25°C. The maximum temperature is 225°C. Molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ The phosphor 1 exhibits a decrease in luminescence intensity with increasing temperature. However, at a temperature of approximately 100°C, which corresponds to the typical operating temperature of optoelectronic components, the relative luminescence intensity still exceeds 75%.

[0346] Figure 30 shows the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+ The measured powder diffraction pattern P1 and the calculated powder diffraction pattern P2 of an exemplary embodiment of phosphor 1 having the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ The calculation was performed using a structural model of phosphor 1 having the following characteristics: Based on the agreement between the measured powder diffraction pattern P1 and the calculated powder diffraction pattern P2, Li8Ho[LiSi4N4O8]:Ce 3+ However, Li8Gd[LiSi4N4O8]:Ce 3+ It can be confirmed that it crystallizes in the same form (isotypically). Li8Ho[LiSi4N4O8]:Ce 3+ In this case, Li8Gd[LiSi4N4O8]:Ce 3+ The lattice sites of Gd within are occupied by Ho.

[0347] From Figure 30, the molecular formula is Li8Ho[LiSi4N4O8]:Ce 3+It is also shown that a powder sample of phosphor 1 containing [the specified element] contains a small amount of secondary phase. Reflectances associated with the secondary phase are indicated by an "x". The secondary phase is Ho2O3.

[0348] Furthermore, the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+ The composition of phosphor 1 having was confirmed by SEM-EDX analysis. SEM-EDX analysis was performed at an acceleration voltage of 25 kV. Averaging two measurements, the (Ho+Ce):Si ratio was 1:4.2(1), which allowed the molecular formula Li8Ho[LiSi4N4O8]:Ce to be determined within the measurement error. 3+ The composition of phosphor 1 having the following characteristics was confirmed.

[0349] Ce as the activating element E 3+ Due to the presence of Li8Ho[LiSi4N4O8]:Ce 3+ It has phosphorescent properties. Figure 31 shows the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+ The emission spectrum E4a of phosphor 1 according to an exemplary embodiment is shown. The emission spectrum E4a was recorded at an excitation wavelength of approximately 448 nanometers. It is shown in the wavelength range of 466 nanometers to approximately 800 nanometers. Molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ and Li8Dy[LiSi4N4O8]:Ce 3+ Compared to phosphor 1 having Li8Ho[LiSi4N4O8]:Ce 3+ It contains the activating element Ce 3+ This may be due to the broad emission band that may originate from its 5d→4f transition, as well as optically active Ho 3+ Linear emission also exists. Linear emission is Ho 3+ This may be due to a 4f→4f transition in [the molecule]. Molecular formula: Li8Ho[LiSi4N4O8]:Ce 3+ The dominant wavelength of emission from phosphor 1 having Li8Ho[LiSi4N4O8]:Ce is approximately 557 nanometers. 3+ Further selected optical data is summarized in Table 45 below.

[0350] [Table 45]

[0351] Figures 32 to 36 show simulated emission spectra of optoelectronic component 10 LED-A4, LED-A5, LED-V4, LED-V5, LED-V6, and LED-V7 according to various exemplary embodiments and comparative examples. Figure 32 shows the simulated emission spectra of LED-A4 and LED-A5. Figure 33 shows the simulated emission spectra of LED-A4 and LED-V4, Figure 34 shows the simulated emission spectra of LED-A4 and LED-V5, Figure 35 shows the simulated emission spectra of LED-A4 and LED-V6, and Figure 36 shows the simulated emission spectra of LED-A4 and LED-V7.

[0352] Each corresponding optoelectronic component 10 comprises a radiation-emitting semiconductor chip 11 and a conversion element 12. The conversion element 12 in the exemplary embodiment having simulated emission spectra LED-A4 and LED-A5 is composed of a material with the molecular formula Li8MC[LiSi4N4O8]:Ce 3+ It includes a phosphor 1 having (where MC = Ho or Gd). A comparative example conversion element 12 having simulated emission spectra LED-V4, LED-V5, LED-V6 and LED-V7 has the empirical formula Lu3Al5O 12 :Ce 3+ The phosphor having LuAG or empirically formulated Lu3(Al,Ga)5O 12 :Ce 3+ The phosphor LuAGaG (where the Ga content is 25% of the total Al and Ga, and the Ce content is approximately 2% of Lu) is included. Furthermore, the comparative example conversion element 12 having simulated emission spectra LED-V5, LED-V6 and LED-V7 includes (Sr,Ca)AlSiN3:Eu as an additional phosphor 14. 2+ ((S)CASN), SrLiAl3N4:Eu 2+ (SLA) or K2SiF6:Mn 4+ It further contains red phosphors such as (KSF).

[0353] The radiation-emitting semiconductor chip 11 emits blue light. Furthermore, the ratio of phosphors 1 and 14 is adjusted to achieve a specific color coordinate. The simulation results and the composition of the optoelectronic component 10 are summarized in Table 46.

[0354] [Table 46]

[0355] From the simulation results, the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+ It is shown that phosphor 1 having the molecular formula Li8Ho[LiSi4N4O8]:Ce can achieve equivalent chromaticity coordinates (CIE x and CIE y) and color temperature to another fluorescence system, while simultaneously observing an increase in color rendering index (CRI). Therefore, the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+ The phosphor 1 having the characteristics is suitable for providing a white light LED with a CRI of at least 70 by using only a single phosphor. Surprisingly, an advantage in CRI was also observed compared to the optoelectronic component 10 which contains two different phosphors in the conversion element 12. The advantage in CRI may be due to the f→f transition and the resulting linear emission in the red spectral range.

[0356] Figure 37A shows the molecular formula Li8Pr[LiSi4N4O8]:Ce as a result of SEM inspection at an accelerating voltage of 15kV. 3+ This shows a secondary electron image of the crystal of an exemplary embodiment of phosphor 1 having Li8Pr[LiSi4N4O8]:Ce 3+ It exists in the form of an isolated rectangular prism crystal. Figures 37B and 37C also show the molecular formula Li8Pr[LiSi4N4O8]:Ce as a result of SEM examination, respectively. 3+ The image shows a secondary electron image of a crystal of an exemplary embodiment of phosphor 1 having [the specified element]. However, these images were taken at an accelerating voltage of 3 kV.

[0357] Figure 38 shows the measured powder diffraction pattern P3 and the calculated powder diffraction pattern P4 for phosphor 1. The measured powder diffraction pattern P3 is for the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+ Based on phosphor 1 having [Li8Nd[LiSi4N4O8]:Ce 3+ This was performed based on the structural model. From the agreement of powder diffraction patterns P3 and P4, the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+ A phosphor 1 having Li8Nd[LiSi4N4O8]:Ce 3+ It is shown that it crystallizes in the same form as Li8Pr[LiSi4N4O8]:Ce 3+ In this case, Li8Nd[LiSi4N4O8]:Ce 3+ In comparison, the lattice sites of Nd are occupied by Pr. The powder diffraction pattern P3 also shows the presence of a secondary phase. Reflections that can be assigned to the secondary phase are indicated with an "x".

[0358] Molecular formula Li8Pr[LiSi4N4O8]:Ce 3+ The composition of phosphor 1 having the following was further confirmed by SEM-EDX analysis. SEM-EDX analysis was performed at an acceleration voltage of 15kV. Averaging two measurements, the Pr:Si ratio was 1:4.1(1), which allowed the molecular formula Li8Pr[LiSi4N4O8]:Ce to be determined within the measurement error. 3+ The composition of phosphor 1 having was confirmed. Further SEM-EDX analysis at an accelerating voltage of 25kV revealed an average ratio of 1:4.0(1) (Pr+Ce):Si, which allowed the molecular formula Li8Pr[LiSi4N4O8]:Ce to be determined within the measurement error. 3+ The composition of phosphor 1 having the following characteristics was confirmed.

[0359] Ce as the activating element 3+ By incorporating Li8Pr[LiSi4N4O8]:Ce 3+ This represents a compound with phosphorescent properties. Figure 39A shows a compound with the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+ Figure 39B shows the emission spectrum E5a of a single particle of phosphor 1 according to an exemplary embodiment having the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+Emission spectra E5a and E5b of a single crystal of phosphor 1 according to an exemplary embodiment are shown. Emission spectra E5a and E5b were recorded at an excitation wavelength of 448 nanometers. Activating element Ce 3+ As a result, in addition to broadband emission that can be explained by the 5d→4f transition, Li8Pr[LiSi4N4O8]:Ce 3+ is optically active Pr 3+ It also has linear emission. The linear emission is Pr 3+ This can be explained by the 4f→4f transition in Li8Pr[LiSi4N4O8]:Ce 3+ The dominant wavelength of total emission λ dom These are approximately 550 nanometers and approximately 545 nanometers, respectively. Li8Pr[LiSi4N4O8]:Ce 3+ Further optical data is summarized in Table 47.

[0360] [Table 47]

[0361] Figure 40 shows a comparison of emission spectra E1a, E4a, and E5a. Emission spectrum E1a is derived from the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ Based on phosphor 1 having Li8Ho[LiSi4N4O8]:Ce 3+ Based on this, the emission spectrum E5a is Li8Pr[LiSi4N4O8]:Ce 3+ Based on the above. The emission spectra were recorded at excitation wavelengths of 448 nanometers. Figure 40 shows broadband emission alone (Li8Gd[LiSi4N4O8]:Ce 3+ ) and a combination of broadband emission and linear emission (Li8Ho[LiSi4N4O8]:Ce 3+ and Li8Pr[LiSi4N4O8]:Ce 3+ This shows the difference between the two.

[0362] Figure 41 shows simulated emission spectra of optoelectronic components 10 according to various exemplary embodiments. Each optoelectronic component 10 emits white light. Each optoelectronic component comprises a blue light-emitting semiconductor chip 11. In this case, the radiation-emitting semiconductor chip 11 has a dominant wavelength λ of 447 nanometers. dom It emits electromagnetic radiation having the following properties. Each optoelectronic component 10 is equipped with a conversion element 12. The optoelectronic component 10 based on the LED-A4 emission spectrum is Li8Ho[LiSi4N4O8]:Ce 3+ The conversion element 12 has the following characteristics. The optoelectronic component 10 on which the emission spectrum LED-A5 is based is Li8Gd[LiSi4N4O8]:Ce 3+ The conversion element 12 has a Li8Pr[LiSi4N4O8]:Ce 3+ It includes a conversion element 12 having the following characteristics.

[0363] Using optoelectronic component 10, a CRI of approximately 70 can be achieved in all cases. Therefore, the molecular formula Li8MC[LiSi4N4O8]:Ce 3+ A phosphor 1 according to an exemplary embodiment having (where MC = Gd, Pr, Ho) is suitable as a phosphor for an optoelectronic component 10 in which only one type of phosphor 1 is used in the conversion element 12. A mixture of phosphors is not necessary to achieve a CRI of around 70. However, the optoelectronic component 10 has different color temperatures. Li8Pr[LiSi4N4O8]:Ce 3+ Using this method, it is possible to achieve particularly high color temperatures of over 25,000K, for example, around 50,000K, for the corresponding optoelectronic component 10.

[0364] Figure 42 shows the molecular formula Li8Nd[LiSi4N4O8]:Ce as a result of SEM inspection at an accelerating voltage of 15kV. 3+ This shows a secondary electron image of the crystal of an exemplary embodiment of phosphor 1 having Li8Nd[LiSi4N4O8]:Ce3+ It exists in the form of an isolated rectangular crystal.

[0365] Figure 43 shows the measured powder diffraction pattern P5 and the calculated powder diffraction pattern P6 for phosphor 1. The measured powder diffraction pattern P5 is for the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ The calculated powder diffraction pattern is based on a powder sample of phosphor 1 having [Li8Nd[LiSi4N4O8]:Ce 3+ This was based on a single crystal structure model. From the agreement of powder diffraction patterns P5 and P6, Li8Nd[LiSi4N4O8]:Ce 3+ The majority of the crystallites in the powder sample are Li8Nd[LiSi4N4O8]:Ce 3+ It is shown to have the same structure as the single crystal. The powder sample contains a small amount of secondary phase. Reflections caused by the secondary phase are indicated by an "x". In the comparison of the measured powder diffraction pattern P5 and the calculated powder diffraction pattern P6, the different intensities of some reflections may be a result of the preferred orientation of the cuboid crystal, which causes some faces to be at the diffraction position more frequently than statistically expected.

[0366] Molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ The composition of phosphor 1 was further confirmed by SEM-EDX analysis. The SEM-EDX analysis was performed at an accelerating voltage of 15 kV. The SEM-EDX analysis revealed a (Nd+Ce):Si ratio of 1:4.3(1), which confirmed the composition within the measurement error.

[0367] Ce as the activating element 3+ By incorporating Li8Nd[LiSi4N4O8]:Ce 3+ This represents a compound with phosphorescent properties. Figure 44 shows a compound with the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ The emission spectrum E6a of a single crystal of phosphor 1 according to an exemplary embodiment is shown. The emission spectrum E6a was recorded at an excitation wavelength of 448 nanometers and is shown in the wavelength range of 470 nanometers to 970 nanometers. In this range, the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+The phosphor 1 having the characteristic exhibits an emission maximum at approximately 903 nanometers.

[0368] Figure 45A shows the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ The emission spectrum E6b of a powder sample of phosphor 1 having Li8Nd[LiSi4N4O8]:Ce is shown. The excitation wavelength here is 450 nanometers, and the emission spectrum E6b is shown in the wavelength range of 750 nanometers to 1,500 nanometers. Detailed spectra of emission spectrum E6b are shown in Figures 45B, 45C, and 45D. Li8Nd[LiSi4N4O8]:Ce 3+ In addition to emission at approximately 901 nanometers, it also has emission peaks at approximately 1,076 nanometers and approximately 1,355 nanometers. Therefore, phosphor 1 can emit electromagnetic radiation in the near-infrared to infrared range of the electromagnetic spectrum.

[0369] Molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ and Li8Dy[LiSi4N4O8]:Ce 3+ Compared to phosphor 1 having the 5d→4f transition, in this case the activated element Ce 3+ Rather than broadband emission, optically active Nd 3+ Linear emission is dominant. Linear emission is Nd 3+ This is caused by a 4f→4f transition in Li8Nd[LiSi4N4O8]:Ce 3+ Activated element Ce 3+ The broadband emission is due to Li8Ho[LiSi4N4O8]:Ce 3+ and Li8Pr[LiSi4N4O8]:Ce 3+ Unlike that, it is almost nonexistent, and in this case, the activating element Ce 3+ Ce acts as a sensitizer, 3+ From Nd 3+ It is shown that there is energy transfer to, and particularly effective energy transfer. Therefore, in this case, Ce 3+ Nd may be excited, 3+ Energy transfer to, especially efficient energy transfer, can occur. Therefore, mainly Nd 3+Corresponding linear emission was observed, Ce 3+ Only a small amount of broadband emission is observed.

[0370] Figure 46 shows the molecular formula Li8Y[LiSi4N4O8]:Ce as a result of SEM inspection at an accelerating voltage of 25kV. 3+ This shows a secondary electron image of a crystal of an exemplary embodiment of phosphor 1 having Li8Y[LiSi4N4O8]:Ce 3+ It exists in the form of isolated rectangular crystals. The crystals form aggregates.

[0371] Figure 47 shows the measured powder diffraction pattern P7 and the calculated powder diffraction pattern P8 for phosphor 1. The measured powder diffraction pattern P7 is for the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ This is based on a powder sample of phosphor 1 having [a specific characteristic]. The calculated powder diffraction pattern is Li8Dy[LiSi4N4O8]:Ce 3+ The calculation was based on the single-crystal structural model. By matching powder diffraction patterns P7 and P8, Li8Y[LiSi4N4O8]:Ce 3+ The majority of the crystallites in the powder sample are Li8Dy[LiSi4N4O8]:Ce 3+ It is shown to have the same structure as the single crystal of Li8Y[LiSi4N4O8]:Ce 3+ In the crystal structure, the position of Dy is occupied by Y. The powder sample contains a small amount of secondary phase. Reflections caused by the secondary phase are indicated by an "x". In this case, the secondary phase is Y2O3.

[0372] Molecular formula Li8Y[LiSi4N4O8]:Ce 3+ The composition of phosphor 1 was further confirmed by SEM-EDX analysis. The SEM-EDX analysis was performed at an accelerating voltage of 25 kV. By averaging two measurements, a (Y+Ce):Si ratio of 1:4.1(4) was obtained from the SEM-EDX analysis, thereby confirming the composition within the measurement error.

[0373] With the activation element E, the molecular formula Li8Y[LiSi4N4O8]:Ce 3+An exemplary embodiment of phosphor 1 having the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ Figure 48 shows the excitation spectrum A3 and emission spectrum E3a of a powder sample of phosphor 1 having the following characteristics: Excitation spectrum A3 is based on the maximum value of the raw data of the emission curve, located at approximately 505 nanometers. Emission spectrum E3a was recorded at an excitation wavelength of 440 nanometers. Molecular formula Li8Y[LiSi4N4O8]:Ce 3+ The phosphor 1 having a maximum emission λ at approximately 519 nanometers max It has the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ Further optical data of phosphor 1 having the molecular formula Li8Y[LiSi4N4O8]:Ce are summarized in Table 48. Table 48 shows the powder sample and the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ The optical data of a single crystal of phosphor 1 having the following properties is shown.

[0374] [Table 48]

[0375] Figure 49A shows the emission spectra E3a, E3b, and V1 of phosphor 1. Molecular formula Li8Y[LiSi4N4O8]:Ce 3+ The emission spectrum E3a of a powder sample of an exemplary embodiment of phosphor 1 having the molecular formula Li8Y[LiSi4N4O8]:Ce was recorded at an excitation wavelength of 440 nanometers. 3+ The emission spectrum E3b of a single particle of an exemplary embodiment of phosphor 1 having the molecular formula Lu3(Al / Ga)5O was recorded at an excitation wavelength of 448 nanometers. 12 :Ce 3+ The emission spectrum V1 of a comparative example of phosphor 1 having was recorded at an excitation wavelength of 460 nanometers. From the emission spectrum, Li8Y[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ The emission of Li8Y[LiSi4N4O8]:Ce is shown to be spectrally equivalent and have similar profiles. 3+ and Lu3(Al / Ga)5O12 :Ce 3+ Due to the similar luminescence, Lu3(Al / Ga)5O 12 :Ce 3+ Li8Y[LiSi4N4O8]:Ce 3+ This can be replaced with the following: In particular, the color coordinates and dominant wavelength λ of phosphor 1 in exemplary embodiments and comparative examples. dom The same applies to Li8Y[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ The selected optical data is summarized in Table 49.

[0376] [Table 49]

[0377] Figure 49B shows emission spectra E3a and E3c. Emission spectrum E3c is for the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ The measurement was performed on a single crystal of phosphor 1 having [the specified characteristic]. The emission spectrum E3c was recorded at an excitation wavelength of 448 nanometers.

[0378] Molecular formula Li8Y[LiSi4N4O8]:Ce 3+ Exemplary embodiments of phosphor 1 having the molecular formula Lu3(Al,Ga)5O 12 :Ce 3+ Figure 50 shows the temperature behavior of a comparative example of phosphor 1 having the following properties. The x-axis represents temperature T (°C), and the y-axis represents the quotient of the integrated intensity between the emission at the current temperature and the emission at 25°C. The step size is Li8Y[LiSi4N4O8]:Ce 3+ Then at 25℃, Lu3(Al,Ga)5O 12 :Ce 3+ The temperature is 50°C. The maximum temperature is 225°C. In Figure 50, Li8Y[LiSi4N4O8]:Ce 3+ The data point D1 is shown as a square, and Lu3(Al,Ga)5O 12 :Ce 3+ The data point D2 is shown as a triangle.

[0379] Molecular formula Li8Y[LiSi4N4O8]:Ce 3+ Phosphor 1 having the molecular formula Li8Y[LiSi4N4O8]:Ce shows a decrease in luminescence intensity with increasing temperature. However, at a temperature of approximately 125°C, which corresponds to the typical operating temperature of optoelectronic components, the relative luminescence intensity is still approximately 85%. At approximately 175°C, the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ The phosphor having the molecular formula Lu3(Al,Ga)5O 12 :Ce 3+ It exhibits improved thermal behavior compared to reference examples that have [specific characteristics].

[0380] Figures 51 to 53 show the simulated emission spectra of the optoelectronic component 10 LED-A7, LED-A8, LED-A9, LED-V8, LED-V9, and LED-V10 according to various exemplary embodiments and comparative examples. Each exemplary embodiment of the optoelectronic component 10 has a conversion element 12 with the molecular formula Lu3(Al,Ga)5O 12 :Ce 3+ It contains phosphor 1 having the molecular formula Lu3(Al,Ga)5O 12 :Ce 3+ Contains phosphor 1 having (LuAGaG). Lu3(Al,Ga)5O 12 :Ce 3+ The Ga content is 25% of the total of Al and Ga, and the Ce content is approximately 2% of Lu. Each conversion element 12 contains at least one further phosphor 14. The further phosphor 14 is (Sr,Ca)AlSiN3:Eu 2+ (SCASN). Furthermore, the conversion element uses Y3Al5O as an additional phosphor 14. 12 :Ce 3+ It may also further contain (YAG) (where the Ce content is 1.6% relative to Y). The additional phosphor 14 emits light in the orange or red wavelength range of the electromagnetic spectrum.

[0381] Each of the radiation-emitting semiconductor chips 11 of the optoelectronic component 10 has an emission peak in the blue range of the electromagnetic spectrum. The optoelectronic component 10 can emit white light. The exact composition of the optoelectronic component 10 for exemplary embodiments and comparative examples that result in the emission spectra shown in Figures 51 to 53, as well as the spectral data of the optoelectronic component 10, are summarized in Table 50 below.

[0382] [Table 50]

[0383] The optoelectronic component 10 was assembled to achieve the highest possible color rendering quality at different color temperatures (CCTs). The emission wavelengths of the radiation-emitting semiconductor chip 11 and phosphors 1 and 14 were adapted to achieve specific target color coordinates and a specific color rendering index (CRI). The conversion element 12 contains a material with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ It is shown that CRIs of approximately 70, 80, and 90 can be achieved using phosphor 1. Optoelectronic component 10 with a CRI of approximately 70 is suitable for street lighting, for example; optoelectronic component 10 with a CRI of approximately 80 is suitable for general lighting; and optoelectronic component 10 with a CRI of approximately 90 is suitable for special lighting such as retail lighting.

[0384] From the results, the molecular formula is Li8Y[LiSi4N4O8]:Ce 3+ Using phosphor 1, Lu3(Al,Ga)5O 12 :Ce 3+ It is shown that the same or at least very similar color coordinates or color temperature and the same or at least very similar color rendering values ​​can be achieved. Therefore, Li8Y[LiSi4N4O8]:Ce 3+ This is suitable for achieving optoelectronic components 10 with high color rendering at different color temperatures, different CRI target values, and different wavelengths of radiation-emitting semiconductor chips 11. Surprisingly, Li8Y[LiSi4N4O8]:Ce 3+The optoelectronic component 10 having Lu3(Al,Ga)5O 12 :Ce 3+ It exhibits a higher LER value than the optoelectronic component 10 having Li8Y[LiSi4N4O8]:Ce 3+ This indicates improved spectral efficiency upon application.

[0385] Figures 54A and 54B show the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ A portion of the emission spectrum E6c of phosphor 1 is shown. The emission spectrum E6c was recorded at an excitation wavelength of approximately 635 nanometers. The wavelength range of approximately 1,000 nanometers to approximately 1,200 nanometers is shown in Figure 54A, and the wavelength range of approximately 1,300 nanometers to approximately 1,500 nanometers is shown in Figure 54B. The emission spectrum E6c shows emission peaks at approximately 1,076 nanometers and approximately 1,355 nanometers. Therefore, the emission spectrum E6c shows the same emission peaks as emission spectra E6, E6a, and E6b in the near-infrared to infrared range. However, the emission peak at approximately 900 nanometers cannot be observed at an excitation wavelength of approximately 635 nanometers.

[0386] Therefore, Nd 3+ It is shown that the f→f transition can be excited directly, i.e., without a sensitizer. In this case, the excitation was performed using electromagnetic radiation in the red region of the electromagnetic spectrum.

[0387] In Figure 55, the molecular formula is Li8Gd[LiSi4N4O8]:Ce 3+ The emission intensity of phosphor 1 having the specified properties is plotted logarithmically against time (nanoseconds). This graph can be used to determine the decay time. The decay time τ, also known as the fluorescence decay time or fluorescence lifetime, represents the average time it takes for the activating element to remain in the excited state during fluorescence and return to the ground state by emitting photons. In this case, the decay time τ is approximately 46.7 nanoseconds, and therefore corresponds to the time when half of the original integrated photoluminescence intensity exists, i.e., the time when half of the excited activating element has already returned to the ground state by emitting photons.

[0388] Figure 56 shows the molecular formula Li8Nd[LiSi4N4O8]:Ce in the range of 470 nanometers to 970 nanometers (including both ends). 3+ The emission spectrum E6a of phosphor 1 having the molecular formula Li8Nd[LiSi4N4O8]:Ce is shown. 3+ Figure 56 shows the emission spectrum E6d based on phosphor 1 having the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ The measurements were taken using a single particle of phosphor 1 having the following characteristics: Emission spectra E7 and E7a are also shown in Figure 56. Emission spectra E7 and E7a are derived from the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ The following are from phosphor 1 according to an exemplary embodiment having the following characteristics: Emission spectra E6a, E6d, E7, and E7a were recorded at an excitation wavelength of 448 nanometers. Phosphor 1 each contains 5 mol% of the activating element Ce relative to Gd. 3+ or Ce 3+ and Nd 3+ Includes.

[0389] Li8Nd[LiSi4N4O8], which is not doped with activating elements, does not emit light when excited at a wavelength of 448 nanometers. In contrast, Li8Nd[LiSi4N4O8]:Ce 3+ Then, emission spectra E6a and E6d can be obtained. Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ The emission spectra E7 and E7a, as can be seen from Figure 56, are in the range of approximately 470 nanometers to approximately 620 nanometers for Ce 3+ The emission band characteristics and Nd in the range of approximately 870 nanometers to 930 nanometers 3+ It shows both of the emission band characteristics.

[0390] From this, Ce 3+ From Nd 3+ We can conclude that energy transfer to Ce occurs. 3+ is Li8Nd[LiSi4N4O8]:Ce 3+It exists only as an activating element and does not exist in stoichiometric quantities like Nd, therefore Ce 3+ The light emission caused by Li8Nd[LiSi4N4O8]:Ce 3+ It is not practically observed. However, Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ Like Ce 3+ and Nd 3+ If the concentrations are approximately the same, Ce 3+ and Nd 3+ The luminescence band can be observed.

[0391] Figure 57 shows the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ An image of the crystal of phosphor 1 according to an exemplary embodiment is shown. This figure was prepared using secondary electrons as a result of SEM inspection at an accelerating voltage of 3 kV. Li8Tm[LiSi4N4O8]:Ce 3+ It exists as an isolated, rectangular crystal.

[0392] Figure 58 shows the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ The measured powder diffraction pattern P9 and the calculated powder diffraction pattern P10 of an exemplary embodiment of phosphor 1 having the molecular formula Li8Tm[LiSi4N4O8]:Ce are shown. The measured powder diffraction pattern P1 was recorded using Mo K-L3 radiation. The calculated powder diffraction pattern P10 shows the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ Based on single-crystal data of phosphor 1 having the molecular formula Li8Tm[LiSi4N4O8]:Ce. 3+ This confirms that phosphor 1 having the molecular formula Li8Tm[LiSi4N4O8]:Ce is the main phase of the powder sample. 3+ It is shown that phosphor 1 having the above characteristics can be specifically synthesized. A small amount of secondary phase, such as Tm2O3, is present in the powder sample. In Figure 58, the reflection positions that can be assigned to Tm2O3 are indicated by the × marks.

[0393] Molecular formula Li8Tm[LiSi4N4O8]:Ce 3+Figure 59 shows the emission spectra E8 and E8a of exemplary embodiments of phosphor 1 having the following characteristics. Emission spectra E8 and E8a were recorded at an excitation wavelength of 448 nanometers and are shown in the wavelength range of 450 nanometers to 850 nanometers. Emission spectrum E8 is of the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ Based on a powder sample of phosphor 1 having the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ It is based on a single crystal of phosphor 1 having [a specific characteristic].

[0394] Compound Li8Tm[LiSi4N4O8]:Ce 3+ The phosphor properties of Ce as an activating element 3+ This can be explained by the presence of Ce. The slight shift in emission when comparing emission spectra E8 and E8a can be explained by the different concentrations of the activating element. Emission spectra E8 and E8a are in the wavelength range of approximately 500 nanometers to approximately 650 nanometers. 3+ This shows the broadband emission characteristics. Broadband emission is Ce 3+ This can be explained by the 5d-4f transition in . However, in the emission spectra E8 and E8a, Tm 3+ Additional linear emission can be observed. This linear emission occurs in the wavelength range of approximately 760 nanometers to approximately 830 nanometers. The linear emission is Tm 3+ This can be explained by the 4f-4f transition of Li8Tm[LiSi4N4O8]:Ce 3+ Table 51 summarizes the selected optical data for the powder samples and single crystals.

[0395] [Table 51]

[0396] Molecular formula Li8Tm[LiSi4N4O8]:Ce in the wavelength range of approximately 500 nanometers to approximately 700 nanometers. 3+In addition to the emission spectrum E8b of a powder sample of phosphor 1 having the molecular formula Li8Tm[LiSi4N4O8]:Ce, the excitation spectrum A4 is also shown in Figure 60. The emission spectrum E8b was recorded at an excitation wavelength of 440 nanometers provided by a Xe lamp. The excitation spectrum is based on the maximum value of the raw data of the emission spectrum E8b, which in this case is approximately 510 nanometers. Based on the emission spectrum E8b, the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ For phosphor 1 having the emission maximum λ of 543.7 nanometers max The following was determined: The full width at half maximum (FWHM) is 125.8 nanometers, and the dominant wavelength λ dom It is 560.7 nanometers.

[0397] Molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ Figure 61 shows the temperature behavior of an exemplary embodiment of phosphor 1 having [Li8Tm[LiSi4N4O8]:Ce]. The x-axis shows the temperature T (°C), and the y-axis shows the quotient of the integrated intensity between the emission at the current temperature and the emission at 25°C. The step size is 25°C. The maximum temperature is 100°C. Molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ The phosphor 1 exhibits a decrease in luminescence intensity with increasing temperature. At a temperature of approximately 100°C, which corresponds to the typical operating temperature of optoelectronic components, the relative luminescence intensity is approximately 67%.

[0398] Figure 62 shows the simulated emission spectra of optoelectronic component 10 for one exemplary embodiment (LED-A10) and two comparative examples (LED-V11 and LED-V12). The emission spectra are shown in the wavelength range of 400 nanometers to 800 nanometers. Each optoelectronic component 10 comprises a blue light-emitting semiconductor chip 11 and a conversion element 12 containing a phosphor 1. In the simulation, the concentration of the phosphor 1 was adjusted to achieve a specific color position on the Planck curve. The comparative examples of optoelectronic component 10 use Lu3(Al,Ga)5O as the phosphor 1. 12 :Ce 3+ (LuAGaG) or Y3(Al,Ga)5O12 :Ce 3+ (YAGaG) is included. The simulation results and the configuration of optoelectronic component 10 are summarized in Table 52.

[0399] [Table 52]

[0400] From the simulation results, the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ Exemplary embodiments of phosphor 1 having are shown to be very suitable for use in white light-emitting optoelectronic component 10. Advantageously, only one phosphor is required to achieve a CRI of at least 70. The improved CRI compared to optoelectronic component 10 containing a garnet phosphor is Tm 3+ This can be explained by the light emission. A radiation-emitting component 10 with a CRI of at least 70 can be used in street lighting.

[0401] Figure 63 shows the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ A secondary electron image of the crystal of phosphor 1 according to an exemplary embodiment is shown. The secondary electron image is the result of SEM examination at an accelerating voltage of 3 kV. Molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ The phosphor 1 having exists as a rectangular prism crystal.

[0402] Figure 64 shows the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ The measured powder diffraction pattern P11 and the calculated powder diffraction pattern P12 of an exemplary embodiment of phosphor 1 having the molecular formula Li8Tb[LiSi4N4O8]:Ce are shown. The measured powder diffraction pattern P11 was recorded using Mo K-L3 radiation. The calculated powder diffraction pattern P12 shows the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ Based on single-crystal data of phosphor 1 having the molecular formula Li8Tb[LiSi4N4O8]:Ce. 3+This confirms that phosphor 1 having the molecular formula Li8Tb[LiSi4N4O8]:Ce is the main phase of the powder sample. 3+ It is shown that phosphor 1 having the above characteristics can be specifically synthesized. A small amount of secondary phase, such as Tb2O3, is present in the powder sample. In Figure 64, the reflection positions that can be assigned to Tb2O3 are indicated by the × marks.

[0403] Figure 65 shows the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ The Rietveld refined powder diffraction pattern R3 of phosphor 1 according to an exemplary embodiment is shown. The powder diffraction pattern was recorded with Mo K-L3 radiation. The relative intensity I is plotted against the diffraction angle 2θ (degrees) in arbitrary units. The × marks on the powder diffraction pattern indicate measured values ​​G1. The white solid line with a black border indicates the calculated powder diffraction pattern G2. Line G3 is the difference between the values ​​of curve G1 and curve G2. In other words, this is the difference pattern G3. The black marks G4 correspond to the theoretical reflection positions of Li8Tb[LiSi4N4O8] (top) and Tb2O3 (bottom). The theoretical reflection position of Li8Tb[LiSi4N4O8] is given by the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ The calculation was performed using the aforementioned crystal structure of the host structure 2 of the phosphor having Li8Tb[LiSi4N4O8]:Ce. The Rietveld refined powder diffraction pattern R3 shows that the structural model based on the measured single crystal is representative of the main phase of the powder sample. 3+ The crystallographic data from the Rietveld analysis are summarized in Table 53.

[0404] [Table 53]

[0405] Figure 66 shows the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ The emission spectra E9 and E9a of exemplary embodiments of phosphor 1 having Li8Tb[LiSi4N4O8]:Ce are shown. Emission spectrum E9 is Li8Tb[LiSi4N4O8]:Ce 3+ Obtained from a single crystal, the emission spectrum E9a is Li8Tb[LiSi4N4O8]:Ce 3+The emission spectra were recorded using powder samples. Emission spectrum E9 was recorded at an excitation wavelength of 448 nanometers, and emission spectrum E9a was recorded at an excitation wavelength of 436 nanometers. Emission spectra E9 and E9a are shown in the wavelength range of 440 nanometers to 740 nanometers, respectively.

[0406] Li8Tb[LiSi4N4O8]:Ce 3+ The phosphor properties are due to the activation element Ce 3+ This can be explained by the existence of Ce 3+ This results in broadband emission via a 5d-4f transition. In addition to broadband emission, Tb 3+ Linear emission can also be recognized. Linear emission is Tb 3+ This is due to a 4f-4f transition in Li8Tb[LiSi4N4O8]:Ce 3+ The selected optical data is summarized in Table 54.

[0407] [Table 54]

[0408] Figure 67 shows the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ The emission spectrum E9b and two excitation spectra A5a and A5b of phosphor 1 having Ce are shown. Emission spectrum E9b was recorded at an excitation wavelength of 436 nanometers provided by a Xe lamp. Excitation spectra A5a and A5b are based on the maximum values ​​of the raw data of the emission curve. Excitation spectrum A5a is Ce 3+ Based on the maximum value of the raw data at approximately 506 nanometers related to emission, the excitation spectrum A5b is Tb 3+ Based on the maximum value of raw data at approximately 546 nanometers related to emission. Calculated for emission spectrum E6b Li8Tb[LiSi4N4O8]:Ce 3+ The emission maximum is 546.1 nanometers. Furthermore, the full width at half maximum (FMAX) of 105.9 nanometers and the dominant wavelength of 557.2 nanometers were determined.

[0409] Molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ Figure 68 shows the temperature behavior of an exemplary embodiment of phosphor 1 having [Li8Tb[LiSi4N4O8]:Ce]. The x-axis shows the temperature T (°C), and the y-axis shows the quotient of the integrated intensity between the emission at the current temperature and the emission at 25°C. The step size is 25°C. The maximum temperature is 225°C. Molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ The phosphor 1 exhibits a decrease in luminescence intensity with increasing temperature. However, at a temperature of approximately 100°C, which corresponds to the typical operating temperature of optoelectronic components, the relative luminescence intensity is still greater than 90%.

[0410] Figure 69 shows the simulated emission spectra of optoelectronic component 10 for one exemplary embodiment (LED-A11) and two comparative examples (LED-V13 and LED-V14). The emission spectra are shown in the wavelength range of 400 nanometers to 750 nanometers. Each optoelectronic component 10 comprises a blue light-emitting semiconductor chip 11 and a conversion element 12 containing a phosphor 1. In the simulation, the concentration of the phosphor 1 was adjusted to achieve a specific color position on the Planck curve. The simulation results and the configuration of the optoelectronic component 10 are summarized in Table 55.

[0411] [Table 55]

[0412] From the simulation results, the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ An exemplary embodiment of phosphor 1 having is shown to be very suitable for use in white light-emitting optoelectronic components 10. Advantageously, only one type of phosphor is required to achieve a CRI of at least 70. Such a radiation-emitting component 10 can be used in street lighting. Molecular formula Li8Tb[LiSi4N4O8]:Ce 3+The advantage of the CRI of the optoelectronic component 10 using exemplary embodiments of the phosphor 1 having Ce 3+ Tb achieved by energy transfer starting from 3+ This can be explained by the emission of light.

[0413] Figure 70 shows the molecular formula Li8Er[LiSi4N4O8]:Ce 3+ A secondary electron image of a crystal of an exemplary embodiment of phosphor 1 having Li8Er[LiSi4N4O8]:Ce is shown. The secondary electron image is the result of SEM examination at an accelerating voltage of 3kV. 3+ In this case, it exists as a nearly rectangular crystal.

[0414] Figure 71 shows the molecular formula Li8Er[LiSi4N4O8]:Ce 3+ The measured powder diffraction pattern P13 and the calculated powder diffraction pattern P14 of an exemplary embodiment of phosphor 1 having the above Li8Er[LiSi4N4O8]:Ce are shown. The measured powder diffraction pattern P13 was recorded using Mo K-L3 radiation. The calculated powder diffraction pattern P14 is the above Li8Er[LiSi4N4O8]:Ce 3+ This is based on the crystal structure data of the single crystal. The measured powder sample is Li8Er[LiSi4N4O8]:Ce, as can be seen from Figure 71. 3+ The powder sample also contains the reactant Er2O3. In Figure 71, the reflection positions that can be assigned to Er2O3 are indicated by the × marks.

[0415] Empirical formula Li8Er[LiSi4N4O8]:Ce 3+ Figure 72 shows the emission spectra E10 and E10a of exemplary embodiments of phosphor 1 having the molecular formula Li8Er[LiSi4N4O8]:Ce 3+ Obtained from a powder sample of phosphor 1 having [a specific property], the emission spectrum E10a is Li8Er[LiSi4N4O8]:Ce 3+ It is obtained from a single crystal. The emission spectra E10 and E10a are shown in the wavelength range of 470 nanometers to 1,000 nanometers. The emission spectra E10 and E10a were recorded using an excitation wavelength of 448 nanometers.

[0416] Figure 73 shows the molecular formula Li8Er[LiSi4N4O8]:Ce in the wavelength range of 840 nanometers to 1,000 nanometers. 3+ A portion of the emission spectrum E10 of phosphor 1 having the following properties is shown.

[0417] Figure 74 shows the molecular formula Li8Er[LiSi4N4O8]:Ce 3+ A portion of the emission spectrum E10b of phosphor 1 having [the specified molecular formula] is shown. Emission spectrum E10b was recorded at an excitation wavelength of 450 nanometers using a different measurement setup than emission spectra E10 and E10a. Emission spectrum E10b is shown in the wavelength range of 840 nanometers to 1,040 nanometers. Molecular formula Li8Er[LiSi4N4O8]:Ce 3+ Another portion of the emission spectrum E10b of phosphor 1 having [the specified element] is shown in Figure 75. Figure 75 shows the wavelength range from 1,400 nanometers to 1,700 nanometers.

[0418] Molecular formula Li8Er[LiSi4N4O8]:Ce 3+ The phosphor 1 having Ce in the wavelength range of approximately 470 nanometers to approximately 600 nanometers 3+ Broadband emission and Er 3+ It has linear emission. 3+ The broadband emission is due to the 5d-4f transition. 3+ The linear emission is due to a 4f-4f transition. Li8Er[LiSi4N4O8]:Ce 3+ It exhibits linear emission in the wavelength ranges of approximately 546.5 nanometers, approximately 554.5 nanometers, and 840-870 nanometers, 970-1,000 nanometers, and 1,450-1,650 nanometers. Therefore, Li8Er[LiSi4N4O8]:Ce 3+ It emits light in the green to yellow wavelength range as well as in the near-infrared wavelength range of the electromagnetic spectrum.

[0419] However, Li8Er[LiSi4N4O8]:Ce 3+ For example, Li8Gd[LiSi4N4O8]:Ce 3+and Li8Dy[LiSi4N4O8]:Ce 3+ Like this, Ce 3+ Broadband emission is not dominant. Furthermore, Li8MC[LiSi4N4O8]:Ce 3+ (Here, MC is Pr, Ho, Tb or Tm) Compared to Ce 3+ The intensity of broadband emission is significantly reduced. As a result, Ce 3+ From Er 3+ Energy transfer to is shown. Therefore, in this case, Ce 3+ It functions as a sensitizer. Therefore, Ce 3+ It is excited first, and then Er 3+ Energy transfer occurs to Er. The observed linear emission is due to Er 3+ It originates from.

[0420] Molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ Figures 76A and 76B show secondary electron images of exemplary embodiments of phosphor 1 having the specified properties. The secondary electron images are the result of SEM inspection at an accelerating voltage of 3 kV.

[0421] Figure 77 shows the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ The measured powder diffraction pattern P15 and the calculated powder diffraction pattern P16 of an exemplary embodiment of phosphor 1 having the above Li8Lu[LiSi4N4O8]:Ce are shown. The measured powder diffraction pattern P15 was recorded using Mo K-L3 radiation. The calculated powder diffraction pattern P16 is the above Li8Lu[LiSi4N4O8]:Ce 3+ This is based on the crystal structure data of the single crystal. As can be seen from Figure 77, the measured powder sample has Li8Lu[LiSi4N4O8]:Ce as the main phase. 3+ It includes. The powder sample also contains LuN as a secondary phase. In Figure 77, the reflection position of LuN is indicated by an "x".

[0422] Activating element Ce 3+ Due to the presence of Li8Lu[LiSi4N4O8]:Ce 3+ It has phosphorescent properties. Figure 78 shows Li8Lu[LiSi4N4O8]:Ce 3+The excitation spectrum A6 and emission spectrum E11 of the powder sample are shown. The excitation spectrum A6 and emission spectrum E11 are shown in the wavelength range of 270 nanometers to 720 nanometers. Excitation spectrum A6 is based on the maximum value of the raw data of emission spectrum E11, which is around 520 nanometers. Emission spectrum E11 was recorded at an excitation wavelength of 440 nanometers. Li8Lu[LiSi4N4O8]:Ce 3+ Table 56 summarizes the selected optical data for the powder samples and single crystals.

[0423] [Table 56]

[0424] Figure 79 shows the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ Emission spectra E11a and Li8Lu[LiSi4N4O8]:Ce of a powder sample of phosphor 1 having 3+ The emission spectrum E11b of the single crystal is shown. Emission spectrum E11a was recorded at an excitation wavelength of 440 nanometers, and emission spectrum E11b was recorded at an excitation wavelength of 448 nanometers. Emission spectra E11a and E11b are shown in the wavelength range of 440 nanometers to 740 nanometers. A comparison of emission spectra E11a and E11b shows that the emission of the single crystal is representative of the emission of the powder sample.

[0425] Figure 80 shows the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ In addition to the emission spectrum E11a of phosphor 1 having the molecular formula Y3Al5O, the emission spectra V2 and V3 of comparative examples of phosphor 1 in the wavelength range of 470 nanometers to 740 nanometers are also shown. Emission spectrum V2 is of phosphor 1 with the molecular formula Y3Al5O 12 :Ce 3+ Obtained from a comparative example having (YAG). The emission spectrum V3 is from the molecular formula Y3(Al,Ga)5O 12 :Ce 3+Obtained from a comparative example having (YAGaG). Emission spectra V2 and V3 were recorded at an excitation wavelength of 460 nanometers. Li8Lu[LiSi4N4O8]:Ce 3+ Y3Al5O 12 :Ce 3+ and Y3(Al,Ga)5O 12 :Ce 3+ The selected optical data is summarized in Table 57.

[0426] [Table 57]

[0427] From the emission spectra E11a, V2, and V3 shown in Figure 80, and the optical data in Table 57, the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ A phosphor 1 having phosphor Y3Al5O 12 :Ce 3+ and Y3(Al,Ga)5O 12 :Ce 3+ It is shown that it has equivalent optical properties. For example, the emission spectra have equivalent profiles, and the emission spectra of phosphor 1 have similar dominant wavelengths λ. dom It has Li8Lu[LiSi4N4O8]:Ce 3+ In the conversion element 12 of the optoelectronic component 10, Y3Al5O 12 :Ce 3+ and Y3(Al,Ga)5O 12 :Ce 3+ It can function as an alternative.

[0428] Molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ Figure 81 shows the temperature behavior of an exemplary embodiment of phosphor 1 having [Li8Lu[LiSi4N4O8]:Ce]. The x-axis shows the temperature T (°C), and the y-axis shows the quotient of the integrated intensity between the emission at the current temperature and the emission at 25°C. The step size is 25°C. The maximum temperature is 225°C. Molecular formula Li8Lu[LiSi4N4O8]:Ce 3+The phosphor 1 exhibits a decrease in luminescence intensity with increasing temperature. However, at a temperature of approximately 100°C, which corresponds to the typical operating temperature of optoelectronic components, the relative luminescence intensity is still greater than 75%.

[0429] Figure 82 shows the simulated emission spectra of optoelectronic component 10 for one exemplary embodiment (LED-A12) and two comparative examples (LED-V15 and LED-V16). The emission spectra are shown in the wavelength range of 400 nanometers to 750 nanometers. Each optoelectronic component 10 comprises a blue light-emitting semiconductor chip 11 and a conversion element 12 containing a phosphor 1. In the simulation, the concentration of the phosphor 1 was adjusted to achieve a specific color position on the Planck curve. The simulation results and the configuration of the optoelectronic component 10 are summarized in Table 58.

[0430] [Table 58]

[0431] From the simulation results, the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ It is shown that an optoelectronic component 10 containing phosphor 1 has an improved CRI compared to an optoelectronic component containing phosphors 1 YAG and YAGaG. Molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ The optoelectronic component 10 containing phosphor 1 has a CRI of over 70 even without further phosphors 14. Therefore, such an optoelectronic component 10 can be used in street lighting.

[0432] Molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ Figure 83 shows a secondary electron image of an exemplary embodiment of phosphor 1 having Li8Yb[LiSi4N4O8]:Ce. The figure shows the result of SEM inspection at an accelerating voltage of 3kV. 3+In this case, it has the form of a rectangular prism crystal.

[0433] Figure 84 shows the molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ The measured powder diffraction pattern P17 and the calculated powder diffraction pattern P18 of phosphor 1 having the following properties are shown. The measured powder diffraction pattern P17 was obtained using Mo K-L3 radiation for Li8Yb[LiSi4N4O8]:Ce 3+ Measurements were taken with the powder sample. The calculated powder diffraction pattern P18 is Li8Yb[LiSi4N4O8]:Ce 3+ Based on crystal structure data. Li8Yb[LiSi4N4O8]:Ce 3+ The measured powder diffraction pattern P17 and the calculated powder diffraction pattern P18 show good agreement, as can be seen from Figure 84. Therefore, the main phase of the powder sample is Li8Yb[LiSi4N4O8]:Ce 3+ Therefore, Li8Yb[LiSi4N4O8]:Ce 3+ It is shown that it can be synthesized in a targeted manner.

[0434] Activating element Ce 3+ Due to the presence of the molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ Phosphor 1 having the molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ This can be seen in the emission spectrum E12 emitted by phosphor 1 having Li8Yb[LiSi4N4O8]:Ce 3+ The powder sample was recorded at an excitation wavelength of 448 nanometers. Molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ Table 59 shows the selected optical data for phosphor 1 and two comparative examples having the specified properties.

[0435] [Table 59]

[0436] From the selected optical data, Li8Yb[LiSi4N4O8]:Ce 3+is shown to have luminescence equivalent to that of the comparative example of the phosphor 1. In the optoelectronic component 10, the phosphor 1 according to one of the comparative embodiments is advantageously replaced with an exemplary embodiment of the phosphor 1 having the molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ can be advantageously replaced with an exemplary embodiment of the phosphor 1 having

[0437] the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ The secondary electron image of the crystal of an exemplary embodiment of the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce is shown in FIG. 86. The secondary electron image is the result of SEM inspection at an acceleration voltage of 3 kV. The crystal was isolated from a powder sample of Li8Sm[LiSi4N4O8]:Ce 3+ The powder sample of the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce contains an unidentified secondary phase. The reflection positions due to the secondary phase are indicated by x marks in FIG. 87.

[0438] FIG. 87 shows the measured powder diffraction pattern P19 and the calculated powder diffraction pattern P20 of the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ The measured powder diffraction pattern P19 was measured on a powder sample of Li8Sm[LiSi4N4O8]:Ce using Mo K-L3 radiation. The calculated powder diffraction pattern P20 is based on the crystal structure data of Li8Sm[LiSi4N4O8]:Ce described above. As can be seen from the comparison between the measured powder diffraction pattern P19 and the calculated powder diffraction pattern P20, the main phase of the powder sample is the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ Thus, it is shown that the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce can be specifically synthesized. However, the powder sample of the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce contains an unidentified secondary phase. The reflection positions due to the secondary phase are indicated by x marks in FIG. 87. 3+ As can be seen from the comparison between the measured powder diffraction pattern P19 and the calculated powder diffraction pattern P20, the main phase of the powder sample is the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ Thus, it is shown that the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce can be specifically synthesized. However, the powder sample of the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce contains an unidentified secondary phase. The reflection positions due to the secondary phase are indicated by x marks in FIG. 87. 3+ Thus, it is shown that the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce can be specifically synthesized. However, the powder sample of the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce contains an unidentified secondary phase. The reflection positions due to the secondary phase are indicated by x marks in FIG. 87. 3+ As can be seen from the comparison between the measured powder diffraction pattern P19 and the calculated powder diffraction pattern P20, the main phase of the powder sample is the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce

[0439] The molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ The emission spectra E13 and E13a of the phosphor 1 having the molecular formula Li8Sm[LiSi4N4O8]:Ce are shown in FIG. 88. The emission spectrum E13 is of Li8Sm[LiSi4N4O8]:Ce 3+It is obtained from a powder sample. The emission spectrum E13a is Li8Sm[LiSi4N4O8]:Ce 3+ It is obtained from a single crystal. The emission spectrum is shown in the wavelength range of 480 nanometers to 750 nanometers. Emission spectra E13 and E13a were recorded using an excitation wavelength of 448 nanometers.

[0440] Ce 3+ Ce caused by the 5d-4f transition in 3+ In addition to broadband emission, Sm 3+ The linear emission can also be seen in emission spectra E13 and E13a. The linear emission is Sm 3+ This is due to the 4f-4f transition in [the system]. Therefore, the activating element Ce 3+ It acts as a sensitizer, and a portion of its energy is converted into Sm 3+ It transmits to [the target]. Molecular formula: Li8Sm[LiSi4N4O8]:Ce 3+ Table 60 summarizes the selected optical data for phosphor 1 having the following properties.

[0441] [Table 60]

[0442] Molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ The phosphor 1 having the above properties is advantageously used as a conversion element 12 of the optoelectronic component 10 due to its optical properties. The simulated emission spectrum of such optoelectronic component 10, LED-A13, is shown in Figure 89. The simulated emission spectra of comparative examples of the optoelectronic component 10, LED-V17 and LED-V18, are also shown in Figure 89. In the comparative examples, Lu3(Al,Ga)5O 12 :Ce 3+ (LuAGaG) or Y3(Al,Ga)5O 12 :Ce 3+ (YAGaG) was used as phosphor 1.

[0443] Formula Li8Sm[LiSi4N4O8]:Ce 3+The compositions of the optoelectronic component 10 and comparative examples of the optoelectronic component 10, which include the phosphor 1 having the properties of the phosphor 1, were adapted to achieve a specific color position on the Planck curve. Therefore, the optoelectronic component 10 emits white light. Details of the optoelectronic component 10 are summarized in Table 61.

[0444] [Table 61]

[0445] From the results, the molecular formula is Li8Sm[LiSi4N4O8]:Ce 3+ It is shown that phosphor 1 having is very suitable for providing an optoelectronic component 10 with a CRI of more than 70. As phosphor 1 in the conversion element 12, Li8Sm[LiSi4N4O8]:Ce 3+ Only is required, and no further phosphors 14 are needed. Such optoelectronic component 10 can be used in street lighting. In the comparative example, a CRI of 70 is not achieved.

[0446] Figure 90 shows the emission spectra E14 and E14a of phosphor 1 according to an exemplary embodiment. Phosphor 1 has the molecular formula Li8Y[LiSi4N4O8]:Eu 2+ It has the following characteristics. The emission spectrum is shown in the wavelength range of 450 nanometers to 850 nanometers, and was recorded at an excitation wavelength of approximately 448 nanometers. The emission spectrum E14 has the molecular formula Li8Y[LiSi4N4O8]:Eu 2+ It is obtained from a powder sample of phosphor 1 having [the following]. The emission spectrum E14a is Li8Y[LiSi4N4O8]:Eu 2+ It is obtained from a single crystal of Li8Y[LiSi4N4O8]:Eu 2+ The selected optical data for the single crystals are summarized in Table 62.

[0447] [Table 62]

[0448] Li8Y[LiSi4N4O8]:Ce 3+ In comparison, Li8Y[LiSi4N4O8]:Eu 2+ It emits light at longer wavelengths. Therefore, Li8Y[LiSi4N4O8]:Eu 2+ The light emission is from the corresponding Ce 3+ Compared to doped compounds, it shifts to a lower energy level.

[0449] Li8Y[LiSi4N4O8]:Eu 2+ The single crystal is Li8Y[LiSi4N4O8]:Eu 2+ It was isolated from a powder sample. The single crystal has a yellow to orange luminescent appearance. A 180°φ scan for cell determination revealed lattice constants a=9.91(1), c=5.01(1), and V=492(1) Å. 3 The following was obtained. The value for this rapid cell determination is Li8Y[LiSi4N4O8]:Ce 3+ The corresponding, more accurate single-crystal measurement values ​​are (a=9.9152(6), c=5.0240(5), V=493.92(6) Å). 3 ) is in very good agreement. Based on agreement with the measurement criteria (tetragonal) and lattice constant, Li8Y[LiSi4N4O8]:Eu 2+ Li8Y[LiSi4N4O8]:Ce 3+ It is shown to have the same structure as Li8Y[LiSi4N4O8]:Eu 2+ Averaging three measurement points on the single crystal, SEM-EDX analysis at an accelerating voltage of 25kV revealed a (Y+Eu):Si ratio of 1:4.3(1), thus identifying the target phase, namely Li8Y[LiSi4N4O8]:Eu, within measurement error. 2+ The composition is confirmed.

[0450] Molecular formula Li8Y[LiSi4N4O8]:Eu 2+ A phosphor 1 according to an exemplary embodiment having the following can be prepared as follows. Molecular formula Li8Y[LiSi4N4O8]:Eu 2+The phosphor 1 having reactants Si3N4, SiO2, Li2O, and Y2O3 in a molar ratio of 2:2:10.5:0.8, a flux of LiF or Li, optionally up to 5% by weight, and the activating element Eu 2+ It is prepared from EuF2 as a reactant. Activating element Eu 2+ It has a content in the range of 0.01 mol% to 15 mol% (including both ends) relative to Lu, particularly in the range of 0.1 mol% to 5 mol% (including both ends). Li8Y[LiSi4N4O8]:Eu 2+ The precise weights required for its construction are summarized in Table 63.

[0451] Before synthesis, the reactants are closely mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tubular furnace. After filling with the reactants, the Ta tube is firmly welded using an arc under an Ar atmosphere. The material is synthesized at a first temperature of around 940°C and maintained at this temperature for about 12 hours. The material is then cooled to a second temperature of about 500°C at a cooling rate of about 2°C / hour. In the second cooling step, the material is cooled to a third temperature of about 150°C at a cooling rate of about 18°C / hour, after which the furnace is switched off.

[0452] [Table 63]

[0453] Features and exemplary embodiments described in relation to the drawings can be combined with each other according to further exemplary embodiments, even if not all combinations are explicitly described. Furthermore, exemplary embodiments described in relation to the drawings may have additional features described in the general section, either alternatively or additionally.

[0454] This application claims priority to German Patent Applications No. 10 2023 117 837.7 and No. 10 2023 132 659.7, the entirety of this application, by reference to all purposes, constitutes part of this specification.

[0455] The present invention is not limited by its description to exemplary embodiments. Rather, the present invention includes any new features and any combination of features, including any combination of features within the claims, even if such features or combinations themselves are not expressly described in the claims or exemplary embodiments. [Explanation of symbols]

[0456] 1. Phosphor 2. Host Structure 3 1st layer 31 SiO2N2 tetrahedron 32 LiO4 tetrahedron 4 MC atoms 41. Square inverted column 5 four rings 6 channels 7 O atoms 8 N atoms 9 2nd layer 91 LiO4N double-terminated 92 LiO3N2 bipyramidal 10 Optoelectronic Components 11. Radiation-emitting semiconductor chips 111 Active region 12 conversion elements 121 Matrix Materials 13 Housing 14 Further phosphors 15 Middle Class 16 Conversion Casting Form 17 Non-convertible casting CCT color temperature CRI (Color Rendering Index) FWHM (Full Width at Half Maximum) I strength LER (Visual Effect) T temperature D1, D2 data points R1 Li8Gd[LiSi4N4O8]:Ce 3+ Rietveld's refinement R2 Li8Dy[LiSi4N4O8]:Ce 3+ Rietveld's refinement R3 Li8Tb[LiSi4N4O8]:Ce3+ Rietveld's refinement G1 Measured diffraction diagram G2 Calculated Diffraction Diagram G3 Difference Diagram G4 Calculated reflection position P1, P3, P5, P7, P9, P11, P13, P15, P17, P19 Measured powder diffraction diagram P2, P4, P6, P8, P10, P12, P14, P16, P18, P20 Calculated powder diffraction diagram Excitation spectra of A1, A2, A3, A4, A5a, A5b, and A6. E1, E1a Li8Gd[LiSi4N4O8]:Ce 3+ Emission spectrum E2, E2a Li8Dy[LiSi4N4O8]:Ce 3+ Emission spectrum E3, E3a, E3b Li8Y[LiSi4N4O8]:Ce 3+ Emission spectrum E4, E4a Li8Ho[LiSi4N4O8]:Ce 3+ Emission spectrum E5, E5a, Li8Pr[LiSi4N4O8]:Ce 3+ Emission spectrum E6, E6a, E6b, E6c, E6d Li8Nd[LiSi4N4O8]:Ce 3+ Emission spectrum E7, E7a Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ Emission spectrum E8, E8a, E8b Li8Tm[LiSi4N4O8]:Ce 3+ Emission spectrum E9, E9a, E9b Li8Tb[LiSi4N4O8]:Ce 3+ Emission spectrum E10, E10a, E10b Li8Er[LiSi4N4O8]:Ce 3+ Emission spectrum E11, E11a, E11b Li8Lu[LiSi4N4O8]:Ce 3+ Emission spectrum E12 Li8Yb[LiSi4N4O8]:Ce 3+ Emission spectrum E13, E13a Li8Sm[LiSi4N4O8]:Ce 3+ Emission spectrum E14, E14a Li8Y[LiSi4N4O8]:Eu 2+ Emission spectrum V1 Lu3(Al,Ga)5O 12 :Ce 3+ Emission spectrum V2 Y3Al5O 12 :Ce 3+ Emission spectrum V3 Y3(Al,Ga)5O 12 :Ce 3+ Emission spectrum S1, S2, S3 method steps Simulated emission spectra of LED-A1 to LED-A13 Simulated emission spectra of LED-V1 to LED-V18

Claims

1. A phosphor having the following molecular formula (1). Li ８－２ｘ－ａ MB ｘ＋ｃ MF ａ MC １－ｃ [MAMD ４－ｚ－ｂ ME ｚ MG ｂ N ４－ｚ＋ｂ－ｃ O ８＋ｚ－ｂ＋ｃ ]:E (In the formula, 0≦x≦4, 0≦c≦1, 0≦z≦4, 0≦a≦8, 0≦b≦4, 0 ≤ 2x + a ≤ 8, 0 ≤ z + b ≤ 4, -4 ≤ -z + b - c ≤ 4, MB is an element or combination of elements selected from the group of divalent elements. MC is an element or combination of elements selected from the group of trivalent elements. MA is Li and / or Na, MD is an element or combination of elements selected from the group of tetravalent elements. ME is an element or combination of elements selected from the group of trivalent elements. MF is an element or combination of elements selected from the group of monovalent elements. MG is an element or combination of elements selected from the group of pentavalent elements. E is the activating element.

2. MB is an element or combination of elements selected from the following group: Be, Mg, Ca, Sr, Ba, Zn. MC is an element or combination of elements selected from the following group: Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu. MD is an element or combination of elements selected from the following group: Si, Ge, Sn, Pb, Ti, Zr, Hf. ME is an element or combination of elements selected from the following groups: B, Al, Ga, In, Sc, Cr. MF is an element or combination of elements selected from the following group: Na, K, Rb, Cs, Au, Cu, Pt, Ag. MG is an element or combination of elements selected from the following groups: V, Nb, Ta, P, As, Sb, and / or E is an element or combination of elements selected from the following group: Eu, Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Tm, Yb, Mn, Cr, Ni, Bi, Cu, Ag, Ti, U. The phosphor (1) according to claim 1.

3. Molecular formula Li ８ MC [LiSi ４ N ４ O ８ A phosphor (1) according to claim 1 or 2, having E.

4. The crystal structure of the host structure of the aforementioned phosphor belongs to the following group: MA(N,O) ４ Tetrahedron, MD(N,O) ４ Tetrahedron, ME(N,O) ４ Tetrahedron, MG(N,O) ４ A phosphor (1) according to any one of claims 1 to 3, comprising at least one structural element selected from tetrahedra.

5. The phosphor (1) according to any one of claims 1 to 4, wherein in the crystal structure of the host structure of the phosphor, MC and / or E are 8-coordinate.

6. A phosphor (1) according to any one of claims 1 to 5, wherein MC is an element or combination of elements selected from the group consisting of Gd, Dy, Ho, Pr, Nd, Y, Tb, Er, Tm, Lu, Sm, and Yb.

7. An element or combination of elements selected from the group of monovalent elements, An element or combination of elements selected from the group of trivalent elements, An element or combination of elements selected from the group of tetravalent elements, Oxygen and / or nitrogen, Activating element E and A phosphor containing (1).

8. A phosphor (1) according to any one of claims 1 to 7, having an emission spectrum that exhibits an emission maximum in the range of green to yellow in the electromagnetic spectrum.

9. A phosphor (1) according to any one of claims 1 to 8, having an emission spectrum that exhibits an emission maximum in the near-infrared to infrared range of the electromagnetic spectrum.

10. A phosphor (1) according to any one of claims 1 to 9, having an emission spectrum that shows an emission maximum in the green to yellow region of the electromagnetic spectrum, and an emission maximum in the orange to red region and / or the near-infrared to infrared region of the electromagnetic spectrum.

11. A method for producing a phosphor (1) according to any one of claims 1 to 10, The process of preparing the reactants, A step of mixing the reactants to form a reactant mixture, The step of heating the reaction mixture, A method of production, including the method described above.

12. A method for producing a phosphor (1) according to claim 11, comprising heating to a first temperature in the range of 700°C to 1,600°C (including both ends).

13. Use of the phosphor (1) according to any one of claims 1 to 10 in a light source.

14. A radiation-emitting semiconductor chip (11) and A conversion element (12) comprising a phosphor (1) according to any one of claims 1 to 10, An optoelectronic component (10) having the following features.

15. The optoelectronic component (10) according to claim 14, wherein the conversion element (12) includes at least one further phosphor.

Images