A coating composition for preventing the collapse of semiconductor patterns, and a pattern coated using the same.

Abstract

The object of the present invention is to provide a coating composition that can prevent the collapse of a semiconductor device pattern by causing the contact angle between the pattern and water to approach 90°, and to provide a pattern coated with such a coating composition. The invention comprises a pattern collapse prevention coating material containing an amide compound represented by chemical formula (1) or a phosphorus compound represented by chemical formula (2), and an organic solvent.

Description

Technical Field

[0001] The present invention relates to a coating composition for preventing pattern collapse that can be used for patterns having a high aspect ratio (aspect ratio of 15 or more) in memory semiconductor manufacturing.

Background Art

[0002] With the miniaturization and high integration of devices, the realization of fine patterns in semiconductor processes is required. In order to form such fine patterns, research and development on methods such as pattern miniaturization by the development of exposure equipment or the introduction of additional processes are in progress, and there is an urgent need to develop process equipment and process technologies for increasing the integration density of semiconductor devices and realizing the formation of structures having finer dimensions in the nanometer range. In order to increase the integration density of semiconductor devices and enable the formation of structures having finer dimensions in the nanometer range, patterns having a high aspect ratio (the ratio of the vertical to the horizontal of the pattern) are used, and as a result, a pattern collapse phenomenon occurs during the progress of the cleaning process. When the aspect ratio of the fine pattern formed on the device substrate is low, there were no problems with the wet cleaning method using distilled water. However, when the aspect ratio became high and only distilled water was used for the final cleaning, a pattern collapse phenomenon occurred. The force that induces the collapse of the fine pattern formed on the substrate increases in proportion to the surface tension and the cosine θ (cosθ) value of the contact angle that the substances used in the pattern formation process and cleaning have with respect to the fine pattern. Therefore, an alternative is being sought by applying the principle that the smaller the surface tension, the smaller the force, and the following method is actually applied. In order to solve the pattern collapse phenomenon, semiconductor manufacturers have adopted a method of reducing the surface tension applied to the pattern by using an alcohol such as isopropanol or a surfactant. In recent years, as semiconductor manufacturing processes have become even more miniaturized, the horizontal dimension of patterns has become smaller and the vertical dimension has become larger compared to existing processes, resulting in a rapid increase in the aspect ratio of the patterns. Since the methods described above are insufficient to solve this problem, a method to resolve it is needed. As briefly mentioned above, factors that influence the force causing the fine pattern to collapse include the surface tension Γ of the cleaning solution, the aspect ratio due to the pattern height H, the spacing D between patterns, the pattern width W, and the contact angle between the pattern and the cleaning solution. In the manufacturing process of fine patterns, the final stage of the wet process involves spin-drying the wafer. According to the theory above, a crucial element was to use a cleaning agent with low surface tension to reduce the force of the cleaning solution being discharged during spin-drying. However, the fine patterns currently under development have extremely high aspect ratios, making it impossible to achieve a significant reduction in surface tension. Except for liquid helium, achieving a surface tension of 0 J / m² is considered essential. 2 It is impossible to lower it any further, and among commercially available substances, including surfactants, the lowest surface tension value is 15 J / m 2 Numerous experiments have confirmed that this is the extent of the problem, and that using a final cleaning solution with a surface tension value higher than this value cannot prevent the collapse of the fine patterns. In other words, there is a problem in that the effect of controlling surface tension to prevent the collapse of the fine pattern can no longer be expected. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Korean Registered Patent Publication No. 10-1118437 [Patent Document 2] Korean Registered Patent Publication No. 10-1535200 [Patent Document 3] Korean Registered Patent Publication No. 10-1483484 [Patent Document 4] Korean Registered Patent Publication No. 10-1525152 [Overview of the project] [Problems that the invention aims to solve]

[0004] The present invention provides a coating composition that can prevent pattern collapse in the manufacture of memory semiconductor devices having a high aspect ratio by using a pattern collapse prevention coating composition to cause the contact angle of water with a pattern containing at least one of polysilicon, silicon oxide, silicon nitride, titanium nitride, and tungsten to approach 90°, and provides a pattern device coated with such a coating composition. [Means for solving the problem]

[0005] Therefore, as a preferred first embodiment, the present invention provides a coating composition for preventing pattern collapse, comprising at least one selected from an amide compound represented by the following chemical formula (1) and a phosphorus compound represented by the following chemical formula (2), characterized in that by mixing with an organic solvent to form a self-assembled monolayer (SAM) at the interface of the pattern, the contact angle of water with respect to the pattern is 80° to 100°. Chemical formula (1) [ka] [In the formula, R1, R2, and R3 are hydrogen, or an alkyl group having 1 to 8 carbon atoms, or a fluoroalkyl group having 1 to 8 carbon atoms, or a carbonyl group having 2 to 6 carbon atoms, respectively.] At least one of R1, R2, and R3 is either hydrogen or an alkyl group having 1 to 8 carbon atoms. At least one of R1, R2, and R3 is a fluoroalkyl group having 1 to 8 carbon atoms or a carbonyl group having 2 to 6 carbon atoms. Chemical formula (2) [ka] [In the formula, R1, R2, and R3 are hydrogen, or an alkyl group having 1 to 16 carbon atoms, or a fluoroalkyl group having 1 to 10 carbon atoms, or a perfluoroalkyl group having 3 to 10 carbon atoms, respectively.] At least one of R1, R2, and R3 is hydrogen. At least one of R1, R2, and R3 is an alkyl group having 1 to 16 carbon atoms, a fluoroalkyl group having 1 to 10 carbon atoms, or a perfluoroalkyl group having 3 to 10 carbon atoms.

[0006] The pattern collapse prevention coating composition according to the above embodiment may contain 5 to 30% by weight of the pattern coating substance and 70 to 95% by weight of the organic solvent. The pattern coating material according to the above embodiment may contain at least one selected from the amide compound represented by chemical formula (1) and the phosphorus compound represented by chemical formula (2). The organic solvent according to the above embodiment may be one or more selected from glycol compounds having 4 to 20 carbon atoms, glycol ether compounds having 4 to 20 carbon atoms, alkylene glycol alkyl ether compounds having 4 to 20 carbon atoms, silylamine compounds having 3 to 12 carbon atoms, alcohols having 1 to 10 carbon atoms, and hydrocarbon solvents having 6 to 10 carbon atoms. Further, as a preferred second embodiment, the present invention provides a pattern device coated with the coating composition for preventing pattern collapse. The contact angle of water with respect to the pattern device coated with the coating composition for preventing pattern collapse according to the above embodiment may be 80° to 100°.

Advantages of the Invention

[0007] The composition for pattern coating according to the present invention uniformly coats the pattern on the substrate by a single spin method or a batch wet method, etches the semiconductor substrate with an oxide, finally washes it with water, and then prevents pattern collapse during drying, thereby reducing defects generated in the manufacturing process stage of the memory semiconductor device, increasing the production volume with an increase in yield, and reducing the manufacturing process cost and process time.

Brief Description of the Drawings

[0008] [Figure 1] It is a diagram showing the measurement results of the presence or absence of pattern collapse according to Example 1. [Figure 2] It is a diagram showing the measurement results of the presence or absence of pattern collapse according to Comparative Example 1.

Modes for Carrying Out the Invention

[0009] Hereinafter, the coating composition for preventing pattern collapse according to the present invention will be described in more detail. The present invention provides a coating composition containing at least one selected from an amide compound represented by the following chemical formula (1) and a phosphorus compound represented by chemical formula (2), which forms a self-assembled monolayer at the interface of a pattern when mixed with an organic solvent, and the contact angle of water with respect to the pattern is 80° to 100°. Chemical formula (1) [Chem.] [In the formula, R1, R2, and R3 are each hydrogen, or an alkyl group having 1 to 8 carbon atoms, or a fluoroalkyl group having 1 to 8 carbon atoms, or a carbonyl group having 2 to 6 carbon atoms, at least one of R1, R2, and R3 is each hydrogen or an alkyl group having 1 to 8 carbon atoms, and at least one of R1, R2, and R3 is a fluoroalkyl group having 1 to 8 carbon atoms or a carbonyl group having 2 to 6 carbon atoms.] Chemical formula (2) [Chem.] [In the formula, R1, R2, and R3 are each hydrogen, or an alkyl group having 1 to 16 carbon atoms, or a fluoroalkyl group having 1 to 10 carbon atoms, or a perfluoroalkyl group having 3 to 10 carbon atoms, at least one of R1, R2, and R3 is hydrogen, At least one of R1, R2, and R3 is an alkyl group having 1 to 16 carbon atoms, a fluoroalkyl group having 1 to 10 carbon atoms, or a perfluoroalkyl group having 3 to 10 carbon atoms.

[0010] This invention relates to a pattern processing material that prevents pattern collapse by coating the pattern surface to bring the contact angle between water and the pattern closer to 90°, based on the theory that when the liquid contact angle reaches 90°, the cosine θ value becomes 0, and the force applied to the pattern also becomes 0, thus preventing collapse in the manufacturing of semiconductor devices for memory. Specifically, this invention relates to a coating composition that prevents pattern collapse by forming a hydrophobic self-assembled monolayer at the interface of the pattern. When coated with the aforementioned pattern collapse prevention coating composition, on substrates made of various pattern materials for different devices used in the manufacture of memory semiconductors, such as polysilicon (Poly Si), silicon oxide (SiO), silicon nitride (SiN), titanium nitride (TiN), and tungsten (W), a self-assembled monolayer is formed by the compound represented by chemical formula (1). This makes the interface hydrophobic, and when water escapes during the cleaning process after oxide film etching, the force is minimized, thereby preventing the pattern collapse phenomenon. Therefore, when applying the pattern collapse prevention coating composition according to the present invention, the water contact angle with the pattern should be close to 90°, it should spread well between the fine patterns of a 300 mm wafer and perform surface treatment uniformly, it should be miscible with solvents such as water and alcohol, but the bonding force with the pattern must also be maintained, it can be used in batch or spin methods, and it has the characteristics that it can be completely removed by dry methods such as heating (thermal), ultraviolet light, or plasma after drying. Taking these conditions into consideration, in the present invention, the coating solution may contain a coating substance that can form a self-assembled monolayer on a pattern and is capable of coating the pattern, and that can be made to have a contact angle with water approaching 90°, and also contains an organic solvent that can dissolve or dilute the coating substance. Generally, pattern materials used in the manufacture of memory semiconductor devices, such as polysilicon, silicon oxide, silicon nitride, titanium nitride, and tungsten, are relatively hydrophilic inorganic materials. During the cleaning process, the small contact angle with water causes pattern collapse due to capillary forces. Therefore, by changing the interface of the pattern to hydrophobic, the contact angle with water increases, thus preventing pattern collapse.

[0011] Therefore, the coating material according to the present invention has at least one functional group in its molecular structure that is a hydrophilic group such as a hydroxyl group, alkoxy group, ester group, or amide group, which is chemically bonded to the inorganic interface, and at least one functional group that is a hydrophobic group such as an alkyl group, a fluoroalkyl group, or a mixture of alkyl and fluoroalkyl groups (perfluoroalkyl group), which is configured to increase the contact angle of water with respect to it. More specifically, the coating material for preventing the pattern collapse may include at least one selected from an amide compound represented by chemical formula (1) and a phosphorus compound represented by chemical formula (2). Examples of amide compounds represented by chemical formula (1) include acetamide, N-propylamide, N-butanamide, N,N-dimethylbutanamide, N,N-dimethylacetamide, 2,2,2-trifluoroacetamide, 2,2,2-trifluoro-N,N-bis(trifluoromethyl)acetamide, pentafluoropropanamide, and 2,2,3,3,4,4,4-heptafluorobutanamide. It may be selected from the group consisting of eptafluorobutanamide, 2,2,3,3,4,4,5,5,5-nonafluoropentanamide, diacetamide, N-propionylpropanamide, N-butyrylbutanamide, 2,2,2-trifluoro-N-(trifluoroacetyl)acetamide, 2,2,2-trifluoro-N-(2-hydroxyethyl)acetamide, or mixtures thereof.

[0012] Examples of phosphorus compounds represented by chemical formula (2) include monomethyl phosphate, monoethyl phosphate, propyl dihydrogen phosphate, butyl dihydrogen phosphate, monohexyl phosphate, monooctyl phosphate, decyl phosphate, dimethyl phosphate, diethyl phosphate, dibutyl phosphate, dihexyl phosphate, and 3,3,3-trifluoropropyl dihydrogen phosphate. phosphate), 3,3,4,4,5,5,6,6,6-Nonafluorohexyl dihydrogen phosphate, Perfluorooctyl phosphate, Perfluorodecyl phosphate, Bis(3,3,3-trifluoropropyl)hydrogen phosphate, Bis(3,3,4,4,5,5,6,6,6-Nonafluorohexyl)hydrogen phosphateIt may be selected from the group consisting of 6-nonafluorohexyl (hydrogen phosphate), bis(perfluorooctyl) phosphate, bis(perfluorodecyl) phosphate, mono-n-dodecyl phosphate, tributyl phosphate, 11-Phosphonoundecanoic acid, hexadecylphosphonic acid, octylphosphonic acid, tetradecylphophonic acid, phosphate monoesters having 8 to 18 carbon atoms, and phosphate diesters, or mixtures thereof. The pattern collapse prevention coating composition according to the present invention may contain 5 to 30% by weight of the pattern coating substance and 70 to 95% by weight of the organic solvent. If the coating material content is less than 5% by weight, there is a problem in that the pattern collapses in a cluster-like manner due to uniformity issues when forming a self-assembled monolayer at the pattern interface. If it exceeds 30% by weight, it may form a multilayer instead of a monolayer, or vertical polymerization may cause the arrangement of hydrophobic groups to be random, leading to pattern collapse.

[0013] When a pattern collapse prevention coating composition is applied to materials such as polysilicon, silicon oxide, silicon nitride, titanium nitride, and tungsten, theoretically, the force applied to the pattern should disappear only when the water contact angle with the coated pattern reaches 90°. However, this is only theoretically valid on a flat plate after the coating is complete and dry. In actual cleaning processes, under conditions where different cleaning solutions are continuously supplied, it has been experimentally confirmed that coating materials exhibiting a contact angle of approximately 80° to 100° on a flat plate can prevent pattern collapse. This is estimated to be due to the difference in contact angle between the flat plate and the patterned substrate, which is caused by factors such as the degree to which the pattern coating material coats the pattern, the processing time, and mixing with water as a cleaning solution after processing. When applying a pattern coating composition to a surface using materials such as polysilicon, silicon oxide, silicon nitride, titanium nitride, and tungsten, it can be said that the requirement for preventing pattern collapse is met if the water contact angle on the surface is approximately 80° to 100°. If the contact angle is less than 80° or more than 100°, the cosθ value will increase, and the force applied to the pattern will also increase, which is likely to cause the pattern to collapse. The pattern coating material may contain a solvent depending on its composition, and some of the solvent participates in the coating process and affects the contact angle of water with the pattern. The solvent content is 70 to 95% by weight based on 100% by weight of the pattern collapse prevention coating composition. If it is less than 70% by weight, a residue problem occurs after the pattern collapse prevention coating composition process, and if it exceeds 95% by weight, a large amount of the pattern collapse prevention coating composition is used. As described above, usable organic solvents may include glycol compounds with 4 to 20 carbon atoms, glycol ether compounds with 4 to 20 carbon atoms, alkylene glycol alkyl ethers with 4 to 20 carbon atoms, silylamine compounds with 3 to 12 carbon atoms, alcohols with 1 to 10 carbon atoms, and hydrocarbons with 6 to 10 carbon atoms.

[0014] Examples of usable solvents include tri(propylene glycol)methyl ether, tri(propylene glycol)monomethyl ether, diethylene glycol monobutyl ether, diethylene glycol monoisobutyl ether, diethylene glycol dibutyl ether, ethylene glycol, ethylene glycol acetate, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, ethylene glycol dimethyl ether, diethylene glycol butyl ether, tripropylene glycol, propylene glycol, propylene glycol monomethyl ether acetate, petroleum ether, mineral split, ethyl-3-ethoxypropionate, ethyl-2-hydroxypropanoate, This may be selected from the group consisting of 3-methoxybutyl acetate, ethyl lactate, cyclohexanone, gamma-butyrolactone, methyl cellosolve acetate, butyl cellosolve, cyclopentanone, cyclohexanone, 2-ethoxyethanol acetate, isopropyl alcohol, decane, methanol, ethanol, butanol, benzyl alcohol, mesitylene, glycol, trimethylsilylamine, trimethylsilylmethylamine, N-trimethylsilyldimethylamine, bis(trimethylsilyl)amine, tris(trimethylsilyl)amine, trimethyl-N-(2-phenylethyl)silylamine, trimethyl-N-(1-phenyl-2-propyl)silylamine, N,N-diethyltrimethylsilylamine, or mixtures thereof. By coating the pattern with the aforementioned pattern collapse prevention coating composition, it is possible to manufacture a pattern with a water contact angle of 80° to 100° relative to the coated surface, thereby preventing the pattern from collapsing. The present invention will be described in detail below with reference to examples. However, the following examples are merely illustrative of the present invention, and the content of the present invention is not limited to the following examples.

[0015] [Examples and Comparative Examples] Example 1 25 g of acetamide and 475 g of propylene glycol monomethyl ether acetate were placed in a 1000 mL flask and stirred for 6 hours. The mixture was then passed through a 0.01 μm filter to remove fine impurities, thereby producing a coating composition for preventing pattern collapse. Examples 2 to 90 A coating composition for preventing pattern collapse was prepared in the same manner as in Example 1, according to the compositions listed in Tables 1 to 3. Comparative Examples 1 to 7 A coating composition for preventing pattern collapse was prepared in the same manner as in Example 1, according to the compositions listed in Tables 1 to 3. The compositional components and compositional ratios of Examples 1-90 and Comparative Examples 1-7 are shown in Tables 1-3 below.

[0016] [Table 1a] [Table 1b] [Table 1c] [Table 1d] [Table 2a] [Table 2b] [Table 2c] [Table 2d] [Table 3a] [Table 3b] [Table 3c] [Table 3d]

[0017] [Experimental Examples and Comparative Experimental Examples: Measurement of Contact Angle and Pattern Collapse] Experimental Examples 1 to 90 After coating a silicon substrate with the pattern collapse prevention coating compositions described in Examples 1 to 90, the contact angle of water with respect to the coated pattern was measured. The next processing step involved processing the patterned wafer using a spin method to confirm whether or not it collapsed. The pattern processing process involves rotating the semiconductor wafer at a speed of 0 to 1000 rpm while spraying at a rate of 1 to 30 mL / s for more than 1 second. After a primary treatment with an etching solution such as hydrofluoric acid to remove the pattern oxide film, the wafer is sequentially treated with deionized water (DI water) and alcohol. The wafer is then coated with the manufactured pattern collapse prevention coating composition, and finally washed with water and alcohol. After drying using a spin-dry method, the processed wafer is obtained. When measured with a scanning electron microscope (SEM, Hitachi S-4700 series), it was found that a pattern was formed in which the oxide film was completely removed without pattern collapse. Comparative Experiment Examples 1 to 7 In Comparative Experiment Example 1, the procedure was the same as in the experimental example, except that the step of coating with the pattern collapse prevention coating composition manufactured above was omitted. Specifically, in the pattern cleaning step, the semiconductor substrate on which the oxide film had formed was first treated with an etching solution such as hydrofluoric acid to remove the pattern oxide film, the silicon substrate was washed with water without any further coating, and then dried using a spin method to obtain a treated substrate. When this was measured with a scanning electron microscope (SEM, Hitachi S-4700 series), it was confirmed that although the pattern oxide film had been removed, the pattern had collapsed. In comparative experiments 2 to 7, a pattern collapse prevention coating composition was manufactured in the same manner as in Example 1, according to the compositional components and compositional ratios listed in Tables 1 to 3. After coating a silicon substrate, the contact angle of water with the coated pattern was measured, and a wafer with a pattern was processed in the same manner as in Experiment Example 1 to check for collapse. The results confirmed that all patterns had collapsed. The measurement results for Experimental Examples 1-90 and Comparative Experimental Examples 1-7 are shown in Table 4 below.

[0018] [Table 4a] [Table 4b] [Table 4c]

[0019] Having described in detail certain parts of the present invention, it will be clear to those with ordinary skill in the art that such specific descriptions are merely preferred embodiments and do not limit the scope of the invention. Therefore, the substantial scope of the invention should be defined by the claims and their equivalents.

Claims

1. A pattern collapse prevention coating composition comprising a pattern collapse prevention coating material containing an amide compound represented by chemical formula (1) or a phosphorus compound represented by chemical formula (2), and an organic solvent. Chemical formula (1) 【Chemistry 1】 [In the formula, R1, R2, and R3 are hydrogen, or an alkyl group having 1 to 8 carbon atoms, or a fluoroalkyl group having 1 to 8 carbon atoms, or a carbonyl group having 2 to 6 carbon atoms,] At least one of R1, R2, and R3 is either hydrogen or an alkyl group having 1 to 8 carbon atoms. At least one of R1, R2, and R3 is a fluoroalkyl group having 1 to 8 carbon atoms or a carbonyl group having 2 to 6 carbon atoms. Chemical formula (2) 【Chemistry 2】 [In the formula, R1, R2, and R3 are hydrogen, or an alkyl group having 1 to 16 carbon atoms, or a fluoroalkyl group having 1 to 10 carbon atoms, or a perfluoroalkyl group having 3 to 10 carbon atoms,] At least one of R1, R2, and R3 is hydrogen. At least one of R1, R2, and R3 is an alkyl group having 1 to 16 carbon atoms, a fluoroalkyl group having 1 to 10 carbon atoms, or a perfluoroalkyl group having 3 to 10 carbon atoms.

2. The pattern collapse prevention coating composition according to claim 1, characterized by comprising 5 to 30% by weight of a pattern collapse prevention coating substance containing an amide compound represented by chemical formula (1) or a phosphorus compound represented by chemical formula (2), and 70 to 95% by weight of an organic solvent.

3. The amide compounds represented by the chemical formula (1) are acetamide, n-propylamide, n-butanamide, N,N-dimethylbutanamide, N,N-dimethylacetamide, and 2,2,2-trifluoroacetamide. amide), 2,2,2-trifluoro-N,N-bis(trifluoromethyl)acetamide, pentafluoropropanamide, 2,2,3,3,4,4,4-heptafluorobutanamide 2,2,3,3,4,4,5,5,5-nonafluoropentanamide, diacetamide, N-propionylpropanamide, N-butyrylbutanamide, 2,2,2-trifluoro-N-(trifluoroacetyl)acetamide The pattern collapse prevention coating composition according to claim 2, characterized in that it is a compound selected from the group consisting of toamide (2,2,2-Trifluoro-N-(trifluoroacetyl)acetamide) and 2,2,2-trifluoro-N-(2-hydroxyethyl)acetamide (2,2,2-Trifluoro-N-(2-hydroxyethyl)acetamide), or a mixture of two or more of these.

4. The phosphorus compounds represented by the chemical formula (2) are monomethyl phosphate, monoethyl phosphate, propyl dihydrogen phosphate, butyl dihydrogen phosphate, monohexyl phosphate, monooctyl phosphate, decyl phosphate, dimethyl phosphate, and diethyl phosphate. Phosphate, dibutyl phosphate, dihexyl phosphate, 3,3,3-trifluoropropyl dihydrogen phosphate, 3,3,4,4,5,5,6,6,6-nonafluorohexyl dihydrogen phosphate, perfluorooctyl phosphate, perfluorodecyl phosphate phosphate), bis(3,3,3-trifluoropropyl)hydrogen phosphate (Bis(3,3,3-trifluoropropyl)hydrogen phosphate), bis(3,3,4,4,5,5,6,6,6-nonafluorohexyl)hydrogen phosphate (Bis(3,3,4,4,5,5,6,6,6-nonafluorohexyl)hydrogen phosphate, bis(perfluorooctyl) phosphate, bis(perfluorodecyl) phosphate, mono-n-dodecyl phosphate, tributyl phosphate, 11-phosphonoundecanoic acid, hexadecylphosphonic acid The pattern collapse prevention coating composition according to claim 2, characterized in that it is a compound selected from the group consisting of acid, octylphosphonic acid, tetradecylphosphonic acid, phosphate monoester having 8 to 18 carbon atoms, and phosphate diester, or a mixture of two or more of these.

5. The pattern collapse prevention coating composition according to claim 2, characterized in that the organic solvent is a compound selected from the group consisting of a glycol compound having 4 to 20 carbon atoms, a glycol ether compound having 4 to 20 carbon atoms, an alkylene glycol alkyl ether compound having 4 to 20 carbon atoms, a silylamine compound having 3 to 12 carbon atoms, an alcohol having 1 to 10 carbon atoms, and a hydrocarbon having 6 to 10 carbon atoms, or a mixture of two or more of these.

6. A pattern coated with the pattern collapse prevention coating composition according to any one of claims 1 to 5.

7. A pattern coated with the pattern collapse prevention coating composition according to claim 6, characterized in that the pattern material includes at least one of polysilicon, silicon oxide, silicon nitride, titanium nitride, and tungsten.

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