Side pump chamber and downstream residue management hardware

Abstract

An exemplary semiconductor processing chamber may include a chamber body having side walls and a base. The chamber may include a pump liner mounted on top of the chamber body. The pump liner may at least partially define an annular pump plenum and at least one exhaust opening that fluidly connects the pump plenum to the interior of the chamber body. The chamber may include a purge ring mounted below the pump liner. The purge ring may define an annular channel extending around the body of the purge ring. The purge ring may define a gas inlet fluidly connected to the annular channel. The purge ring may define purge ports located at different radial positions around the purge ring, each purge port aligned with and fluidly connected to the pump plenum. The chamber may include a purge gas source connected to the gas inlet.

Description

Technical Field

[0001] Cross - Reference to Related Applications

[0001] This application claims the benefit and priority of U.S. Patent Application No. 18 / 303,391, filed on April 19, 2023, entitled "SIDE PUMPING CHAMBER AND DOWNSTREAM RESIDUE MANAGEMENT HARDWARE", the entire content of which is incorporated herein by reference.

[0002]

[0002] This technology relates to components and devices for semiconductor manufacturing. More specifically, this technology relates to processing chamber components and other semiconductor processing equipment.

Background Art

[0003]

[0003] Integrated circuits are realized by a process of forming complex patterned material layers on a substrate surface. To form the patterned material on the substrate, a method for controlling the formation and removal of the material is required. In many cases, precursors are supplied and distributed to the processing area to deposit the material uniformly on the substrate or to etch the material on the substrate. Many aspects of the processing chamber, such as the uniformity of the process conditions in the chamber, the uniformity of the flow through the components, and other process and component parameters, can affect the uniformity of the process. Even a slight discrepancy across the substrate can affect the formation or removal process.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to manufacture high - quality devices and structures. These needs and other needs are solved by this technology.

Summary of the Invention

[0005]

[0005] An exemplary semiconductor processing chamber may include a chamber body having side walls and a base. The chamber may include a pump liner mounted on top of the chamber body. The pump liner may at least partially define an annular pump plenum and at least one exhaust opening that fluidly connects the pump plenum to the interior of the chamber body. The chamber may include a purge ring mounted below the pump liner. The purge ring may define an annular channel extending around the body of the purge ring. The purge ring may define a gas inlet fluidly connected to the annular channel. The purge ring may define a plurality of purge ports located at different radial positions around the purge ring, each of which is aligned with and fluidly connected to the pump plenum. The chamber may include a purge gas source connected to the gas inlet.

[0006]

[0006] In some embodiments, the chamber may include an exhaust assembly fluidly connected to the pump plenum. The outlets of the multiple purge ports may face downward. The chamber may include a faceplate mounted on top of the purge ring. The chamber may include a thermal isolator positioned between the faceplate and the purge ring. The purge ring may be made of aluminum. The outer surface of the purge ring may include lateral projections. The gas inlet may be located on the lateral projections. The chamber may include a weld extending between the purge gas source and the gas inlet, connecting the purge gas source to the gas inlet.

[0007]

[0007] Some embodiments of the present technology may include a purge ring. The purge ring may include a ring body having a first surface and a second surface opposite to the first surface. The ring body may define an open interior. The purge ring may define an annular channel extending around the ring body. The purge ring may define a gas inlet fluidly connected to the annular channel. The purge ring may define a plurality of purge ports located at different radial positions around the purge ring. The plurality of purge ports may be fluidly connected to the annular channel.

[0008]

[0008] In some embodiments, the purge ports can provide substantially uniform flow conductance in the periphery of the open interior. The cross-sectional area of ​​the annular channel may be equal to or greater than the total cross-sectional area of ​​the purge ports. The gas inlet may be located in a lateral projection extending radially outward from the outer surface of the ring body. The purge ports may be arranged at irregular intervals in the periphery of the open interior. At least some of the purge ports may have different cross-sectional areas. Each outlet of the purge ports may be angled with respect to a plane extending throughout the annular channel. Each of the purge ports may be substantially perpendicular to the plane. The purge ring can define a plurality of purge channels. Each of the purge channels may extend between the annular channel and each of the purge ports to fluidly connect the annular channel and each of the purge ports.

[0009]

[0009] Some embodiments of the present technology may encompass substrate processing methods. The method may include flowing a precursor into a processing chamber. The method may include generating a plasma of the precursor within the processing area of ​​the processing chamber. The method may include depositing a material on a substrate placed within the processing area. The method may include exhausting the precursor from the processing chamber through the plenum of a pump liner located at the top of the chamber body of the processing chamber. The method may include flowing a purge gas into the plenum of the pump liner through a plurality of purge ports formed in a purge ring positioned below the pump liner.

[0010]

[0010] In some embodiments, the method may include exhausting the precursor and purge gas from the processing chamber and pump liner via a foreline, throttle valve, and pump. The purge gas may include O2.

[0011]

[0011] The above technology may offer many advantages over conventional systems and technologies. For example, embodiments of the technology utilize a purge ring positioned below the pump liner to guide purge gas to an exhaust assembly including one or more forelines, throttle valves, and / or pumps, thereby preventing and / or removing residue from components of the exhaust assembly of the processing system. These and other embodiments will be described in more detail below, along with their many advantages and features, in conjunction with the accompanying drawings.

[0012]

[0012] A further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the remainder of the specification and the drawings. [Brief explanation of the drawing]

[0013] [Figure 1] This is a top view showing an exemplary processing system according to several embodiments of this technology. [Figure 2]This is a schematic cross-sectional view showing an exemplary plasma system according to several embodiments of this technology. [Figure 3A] This is a schematic cross-sectional view illustrating an exemplary purging ring according to several embodiments of this technology. [Figure 3B] This is a schematic cross-sectional view illustrating an exemplary purging ring according to several embodiments of this technology. [Figure 3C] This is a schematic cross-sectional view illustrating an exemplary purging ring according to several embodiments of this technology. [Figure 4] This figure shows the steps of an exemplary semiconductor processing method according to several embodiments of this technology. [Modes for carrying out the invention]

[0014]

[0017] Some of the figures are included as schematic diagrams. Please understand that the figures are for illustrative purposes only and should not be considered to scale unless the scale is specified. Furthermore, schematic diagrams are provided to aid understanding and may not include all aspects or information compared to realistic representations, and may contain exaggerated material for illustrative purposes.

[0015]

[0018] In the attached diagrams, similar components and / or features may be given the same reference label. Furthermore, various components of the same type may be distinguished by adding a letter after the reference label to distinguish similar components. If only the first reference label is used herein, its description is applicable to any one of the similar components having the same first reference label, regardless of the letter.

[0016]

[0019] In plasma deposition processes, a voltage may be applied to one or more constituent precursors to facilitate film formation on the substrate. Any number of material films, including conductive and dielectric films, as well as films that facilitate material transfer and removal, can be generated to form semiconductor structures. For example, a hard mask film can be formed to protect underlying materials to be maintained while facilitating substrate patterning. In many processing chambers, multiple precursors may be mixed in a gas panel and supplied to the processing area of ​​the chamber where the substrate may be placed. While the components of the lid stack can affect the flow rate distribution to the processing chamber, many other process variables can similarly affect the uniformity of deposition.

[0017]

[0020] During and / or after the processing steps, precursors and / or other process gases and / or their plasma radicals are exhausted from the processing area through an exhaust assembly, which may include, for example, a pump liner, one or more forelines, one or more throttle valves, and / or one or more pumps. Residue from such process gas-derived radicals can accumulate on components of the exhaust assembly and / or other nearby chamber components. These residues may necessitate more frequent and thorough cleaning of chamber equipment, potentially leading to increased downtime and service costs. Furthermore, residue accumulation can shorten the lifespan of various components. In addition, residue accumulation in throttle valves can reduce the flow path cross-sectional area of ​​the throttle valve, substantially altering the flow conductance through the throttle valve and potentially causing throttle valve drift. For example, as residue accumulates over time, the flow path cross-sectional area decreases, requiring the throttle valve to be opened wider to maintain the desired conductance (drift). This throttle drift alters the flow path cross-sectional area associated with each angle of the throttle valve. Over time, to compensate for the decrease in conductance and the pressure changes in the gas flowing through the throttle valve, it becomes necessary to open the throttle valve to a larger angle. The larger the angle, the more difficult it becomes to control the throttle valve, making it challenging to supply precise conductance and fluid pressure.

[0018]

[0021] This technology overcomes these challenges by utilizing a purge ring that is coupled to the exhaust assembly, for example, to the pump liner and downstream components of the exhaust assembly, and / or between the pump liner and downstream components of the exhaust assembly. The purge ring can define multiple purge ports that guide the purge gas to a location near the faceplate and to the downstream region of the exhaust assembly. A purge gas can be flowed through the processing step, which can reduce or prevent radicals in the process gas from forming residual deposits in the lower region. Furthermore, the purge gas can remove any residues that are present. This reduction in residues can reduce the frequency and / or intensity of cleaning steps, thereby extending the lifespan of the chamber components. In addition, embodiments can reduce throttle valve drift and improve flow conductance through the foreline. Thus, this technology can reduce the occurrence of residue buildup in the chamber.

[0019]

[0022] While the remaining disclosure will always specify a particular deposition process using the disclosed technology, it will be readily apparent that the system and method are equally applicable to other deposition and washing chambers, as well as processes that may be carried out in the chambers described. Therefore, the technology should not be considered limited to use in these specific deposition processes or chambers only. This specification will first describe one possible system and chamber that may include a lid stack component according to an embodiment of the technology, and then describe additional modifications and adjustments to this system according to an embodiment of the technology.

[0020]

[0023] Figure 1 is a schematic cross-sectional view showing an exemplary substrate processing chamber 100 according to one packaging configuration. The substrate processing chamber 100 may be, for example, a chemical vapor deposition (CVD) chamber or a plasma CVD chamber. The disclosure also assumes that other chambers, such as an atomic layer deposition (ALD) chamber or a physical vapor deposition (PVD) chamber, may be used. The substrate processing chamber 100 may have a chamber body 102 and a chamber lid 104 disposed on the chamber body 102. The chamber body 102 may have one or more side walls and define an internal region 106 between the bottom of the chamber body 102 and the chamber lid 104. The chamber body 102 may consist of a single body or two or more bodies.

[0021]

[0024] The substrate processing chamber 100 can include a gas distribution assembly 116 that is connected to the chamber lid 104 or disposed within the chamber lid 104 for supplying a flow of one or more process gases 109 into the processing region 110 through the showerhead 101. The one or more process gases can include one or more of Ar and / or C3H6, among other gases. In one embodiment, the one or more process gases can include one or more reactive gases. The showerhead 101 can include a backing plate 126 and a face plate 130. The gas distribution assembly 116 can include a gas manifold 118 that is connected to a gas inlet passage 120 formed in the chamber lid 104. The gas manifold 118 can receive a flow of one or more process gases from one or more gas sources 122. Although two gas sources 122 are illustrated, any number of gas sources can be provided in various embodiments. The flow of process gases received from the one or more gas sources 122 is distributed throughout the gas box 124, flows through a plurality of openings 191 in the backing plate 126, and can be further distributed throughout the plenum 128 defined by the backing plate 126 and the face plate 130. The flow of the process gas 109 can then flow into the processing region 110 of the internal region 106 through one or more gas openings 132 formed in the lower surface 119 of the face plate 130 of the showerhead 101.

[0022]

[0025] Inside the internal region 106 defined by the chamber body 102, the substrate support 138 may be disposed. The substrate support 138 may be a pedestal as shown in the figure, but various other configurations can also be used. The substrate support 138 can support the substrate 136 within the substrate processing chamber 100. The substrate support 138 can support the substrate 136 on the support surface 139 of the substrate support 138. The substrate support 138 can include a heater and / or an electrode disposed therein. The electrode can receive direct current (DC) voltage, radio frequency (RF) energy, and / or alternating current (AC) energy to facilitate the processing. The lower surface 119 of the face plate 130 of the showerhead 101 may face the support surface 139 of the substrate support 138. The support surface 139 may face the lower surface 119 of the face plate 130 of the showerhead 101. The substrate support 138 may be made of a single body or two or more bodies.

[0023]

[0026] The substrate support 138 may be movably disposed within the internal region 106 by a lift system 195. The movement of the substrate support 138 can facilitate the transfer of the substrate 136 in and out of the internal region 106 through a slit valve formed through the chamber body 102. The substrate support 138 can also move to different processing positions for the processing of the substrate 136.

[0024]

[0027] During substrate processing, when a process gas (e.g., process gas 109) flows into the processing area 110, a heater can heat the substrate support 138 and the support surface 139. Also during substrate processing, electrodes within the substrate support 138 can propagate radio frequency (RF) energy, alternating current (AC) voltage, or direct current (DC) voltage to promote plasma generation in the processing area 110 and / or chucking of the substrate 136 to the substrate support 138. The heat, gas, and energy from the electrodes within the substrate support 138 can promote film deposition on the substrate 136 during substrate processing. The faceplate 130, which may be grounded via coupling to the chamber body 102, and the electrodes of the substrate support 138 can promote the formation of capacitive coupling of the plasma. When power is supplied to the electrodes within the substrate support 138, an electric field may be generated between the faceplate 130 and the substrate support 138, ionizing the atoms of the gas present between the substrate support 138 and the faceplate 130 in the processing area 110 and releasing electrons. The ionized atoms are accelerated toward the substrate support 138, promoting film formation on the substrate 136.

[0025]

[0028] A pump device 103 may be located in the substrate processing chamber 100. The pump device 103 can facilitate the removal of gases from the internal region 106 and the processing region 110. The gases exhausted by the pump device 103 may include one or more process gases and process residues. Process residues are generated as a result of the process of depositing a film on the substrate 136.

[0026]

[0029] The pump device 103 may include a pump liner 160 disposed on the chamber body 102. For example, the pump liner 160 may be mounted on a stepped surface 193 of the chamber body 102, and a liner 159 may be positioned between the substrate support 138 and the pump liner 160. The stepped surface 193 may be stepped upward from the bottom surface 154 of the chamber body 102. The pump liner 160 may consist of a single body or two or more bodies. The pump liner 160 may be made of a material containing one or more of aluminum, aluminum oxide, and / or aluminum nitride. The liner 159 may be made of an electrically insulating material such as a ceramic material. In one embodiment, the liner 159 may be made of one or more of quartz, aluminum-containing ceramic materials such as aluminum oxide and / or aluminum nitride, or any other suitable material. The pump liner 160 may be positioned around the substrate support 138 and surround the substrate support 138. A portion of the purge gas flow path 111 may be defined by the inner surface of the liner 159 and the lateral outer surface of the substrate support 138. The substrate processing chamber 100 may include a purge gas inlet 113 located at the bottom of the chamber body 102. The purge gas inlet 113 may be an opening formed in the bottom surface of the chamber body 102. The purge gas inlet 113 may be fluidly connected to a purge gas source 114 that supplies one or more purge gases 179 to the purge gas inlet 113. A bowl 112 may be located in the internal region 106. The bowl 112 may define the purge gas region 115. One or more bellows 117 may be located in the purge gas region 115. One or more purge gas baffles 161 may be located in the purge gas region 115. One or more bellows 121 may be positioned above the horizontal portion 112b of the bowl 112 and below the bottom surface 198 of the substrate support 138. The one or more bellows 121 can isolate the dead volume 163 from a portion of the purge gas flow path 111 located between the one or more bellows 121 and the vertical portion 112a of the bowl 112.

[0027]

[0030] During the substrate processing process, and while the processing gas 109 is flowing from the showerhead 101 into the processing area 110, the purge gas inlet 113 can allow one or more purge gases 179 to flow into the purge gas area 115. The horizontal portion 112b of the bowl 112 may include one or more purge gas openings 197 that allow the purge gas 179 to flow from the purge gas area 115 into the purge gas channel 111. One or more purge gas openings 197 may be located radially outward from one or more bellows 121. The processing gas 109 flows toward the substrate 136, depositing a film on the substrate 136, while the purge gas 179 flows upward through the purge gas channel 111, preventing the processing gas 109 from diffusing downward into the purge gas channel 111. The processing gas 109 and the purge gas 179 may merge and / or mix at a diffusion position close to the support surface 139. The processing gas 109 and the purge gas 179 are mixed to form a mixed gas 148, which can be exhausted by the pump device 103. The pump device 103 may include a pump liner 160 and a liner 159.

[0028]

[0031] One or more purge gases 179 may include one or more inert gases, for example, one or more Ar and / or N2. One or more process gases 109 may flow from the showerhead 101 into the processing area 110 at a first flow rate. In one embodiment, the first flow rate may be a volumetric flow rate with units of standard cubic centimeters per minute (SCCM). One or more purge gases 179 may flow from the purge gas inlet 113 into the purge gas area 115 at a second flow rate. In one embodiment, the second flow rate may be a volumetric flow rate with units of SCCM. The second flow rate may be a ratio R1 to the first flow rate. For example, the ratio R1 may be in the range of 0.25 to 0.75 of the first flow rate, in the range of 0.25 to 0.50 of the first flow rate, or in the range of 0.48 to 0.52 of the first flow rate. In one embodiment, which can be combined with other embodiments, the ratio R1 may be about 0.25, 0.30, 0.40, or 0.5 of the first flow rate. The range and examples of the ratio R1 of the second flow rate to the first flow rate may provide advantages such as preventing at least a portion of the processing gas from diffusing into the purge gas channel 111 below the support surface 139 during the substrate processing process. By reducing or preventing such diffusion, the possibility of the processing gas 109 depositing material on surfaces other than the substrate 136 is reduced or eliminated. By reducing deposition on surfaces other than the substrate 136, delays, throughput reductions, operating costs, cleaning time, and / or substrate defects are reduced or eliminated.

[0029]

[0032] The substrate processing chamber 100 may be part of a substrate processing system 180, which includes a controller 181 connected to the substrate processing chamber 100. The controller 181 may be part of a non-transient computer-readable medium.

[0030]

[0033] The controller 181 can control the configuration of the substrate processing chamber 100 during substrate processing. The controller 181 includes a central processing unit (CPU) 182, memory 183, and support circuits 184 for the CPU 182. The controller 181 can facilitate the control of the components of the substrate processing chamber 100. The controller 181 may be a computer available for use in an industrial environment to control various chamber components and subprocessors. The memory 183 can store instructions such as software (source code or object code) that are executed or called to control the overall operation of the substrate processing chamber 100 as described herein. The controller 181 can operate each of the controllable components within the substrate processing chamber 100. For example, the controller 181 can control the operation of a gas source 122 for introducing processing gas, a purge gas source 114 for introducing purge gas, and / or a vacuum pump 133 for exhausting gas to remove or reduce contaminating particles (residue, etc.) in the substrate processing chamber (described later). In one embodiment, the controller 181 can control the lift system 195 to raise and lower the substrate support 138, and can also control the heater and electrodes of the substrate support 138 to supply heat and energy to facilitate processing.

[0031]

[0034] The pump liner 160 may be fluidically connected to the foreline 172 through a first conduit 176 and a second conduit 178. The foreline 172 may include a first vertical conduit 131, a second vertical conduit 134, a horizontal conduit 135, and an outlet conduit 143. In one embodiment, the outlet conduit 143 is a third vertical conduit. In one embodiment, the first conduit 176 and the second conduit 178 may be openings formed in the chamber body 102. The first conduit 176 and / or the second conduit 178 may be tubes or other flow devices extending between one surface of the chamber body 102, for example, the bottom surface 154, and the pump liner 160. In one embodiment, the first conduit 176 and / or the second conduit 178 may be parts of the first vertical conduit 131 and the second vertical conduit 134, respectively. In such an example, the first vertical conduit 131 and the second vertical conduit 134 may extend through the chamber body 102 and be connected to the pump liner 160. In one embodiment that can be combined with other embodiments, the first conduit 176 and the second conduit 178 may each be openings formed in one or more side walls of the chamber body 102.

[0032]

[0035] The first conduit 176 may be fluidically connected to the first vertical conduit 131 of the pump liner 160 and foreline 172. The second conduit 178 may be fluidically connected to the second vertical conduit 134 of the pump liner 160 and foreline 172. The first vertical conduit 131 and the second vertical conduit 134 may be fluidly connected to the horizontal conduit 135. The horizontal conduit 135 may include a first portion 137 connected to the first vertical conduit 131, a second portion 140 connected to the second vertical conduit 134, and a third portion 141 connected to the outlet conduit 143. The horizontal conduit 135 may include a first end 149 adjacent to the first vertical conduit 131 and a second end 151 adjacent to the second vertical conduit 134. The horizontal conduit 135 may consist of a single body, or it may be formed from one or more components.

[0033]

[0036] The first conduit 176, the second conduit 178, the first vertical conduit 131, the second vertical conduit 134, and the horizontal conduit 135 may be configured to guide gas through them. The first conduit 176, the second conduit 178, the first vertical conduit 131 and / or the second vertical conduit 134 do not need to be perfectly vertical and may be angled or may include one or more bends and / or angles. The horizontal conduit 135 of the present invention does not need to be perfectly horizontal and may be angled or may include one or more bends and / or angles.

[0034]

[0037] The outlet conduit 143 may be fluidly connected to a vacuum pump 133 to control the pressure within the processing area 110 and to exhaust gas and residue from the processing area 110. The vacuum pump 133 can exhaust gas from the processing area 110 through the pump liner 160, the first conduit 176, the second conduit 178, the first vertical conduit 131 of the foreline 172, the second vertical conduit 134, the horizontal conduit 135, and the outlet conduit 143.

[0035]

[0038] The pump liner 160 may be fluidically connected to the outlet conduit 143 through a second conduit 178, a second vertical conduit 134, and a horizontal conduit 135. The mixed gas 148 can flow from the annular band 105 through the exhaust port 145 into the second conduit 178. The second exhaust port of the pump liner 160 may be located between the annular band 105 and the first conduit 176. The second exhaust port may be fluidically connected to the outlet conduit 143 through the first conduit 176, a first vertical conduit 131, and a horizontal conduit 135. In addition to flowing through the exhaust port 145, the mixed gas 148 can flow through the second exhaust port into the first conduit 176.

[0036]

[0039] The first vertical conduit 131 can allow the mixed gas 148 to flow from the first conduit 176 into the first section 137 of the horizontal conduit 135. The second vertical conduit 134 can allow the mixed gas 148 to flow from the second conduit 178 into the second section 140 of the horizontal conduit 135. The first section 137 and the second section of the horizontal conduit 135 can allow the mixed gas 148 to flow from the first vertical conduit 131 and the second vertical conduit 134 into the third section 141 of the horizontal conduit 135, respectively. The third section 141 of the horizontal conduit 135 can allow the mixed gas 148 to flow from the horizontal conduit 135 into the outlet conduit 143. The outlet conduit 143 can exhaust the mixed gas 148 from the exhaust port 145 and from the second exhaust port located between the ring band 105 and the first conduit 176.

[0037]

[0040] The illustration shows a pump liner 160 with two conduits 176, 178, two vertical conduits 131, 134, and exhaust port 145 and a second exhaust port, but in various embodiments, any number of conduits, vertical conduits, and / or exhaust ports can be implemented. For example, the pump liner 160 may have at least three exhaust ports fluidly connected to each conduit and vertical conduit. The third conduit may be connected to a third vertical conduit, and the third vertical conduit may be connected to a horizontal conduit 135. The three exhaust ports may be spaced approximately equal to each other along the circumferential axis of the pump liner 160, for example, at 120 degrees apart.

[0038]

[0041] Figure 2 is a schematic partial cross-sectional view showing an exemplary semiconductor processing chamber 200 according to several embodiments of the present technology. Figure 2 includes one or more components described above with respect to Figure 1 and may show further details relating to the chamber. In some embodiments, the chamber 200 is understood to include all features or aspects of the chamber 100 described above. The chamber 200 may be used to perform semiconductor processing steps, including the deposition of hard mask material as described above, as well as other deposition, removal, and cleaning steps. The chamber 200 may show a partial view of the processing area of ​​the semiconductor processing system and may not include all components that are understood to be incorporated into some embodiments of the chamber 200.

[0039]

[0042] As mentioned above, Figure 2 may show a portion of the processing chamber 200. The chamber 200 may include a plurality of lid stack components that facilitate the supply or distribution of material into the processing area 210 through the processing chamber 200. The chamber lid plate 204 may extend across one or more plates of the lid stack and can provide structural support to various components such as the output manifold 218. The chamber 200 may include the chamber body 202, a gas box, a backing plate, and / or a faceplate / shower head 201.

[0040]

[0043] The chamber 200 may include a substrate support 238 which may include a support surface 239 on which a substrate 236 can be supported. The substrate support 238 may include a heater and / or electrodes located inside it. The electrodes may receive a direct current (DC) voltage, radio frequency (RF) energy, and / or alternating current (AC) energy to facilitate processing. The substrate support 238 is vertically translatable between a transfer position and a process position along its central axis, as shown in the figure. For example, a lift system may be used to raise and lower the substrate support 238 between a transfer position and one or more process positions. At the transfer position, the substrate 236 can be transferred in and out of the substrate support 238 via a slit valve formed through the chamber body 202.

[0041]

[0044] The pump liner 260 may be positioned around the outer surface of the substrate support 238. The pump liner 260 may be mounted on top of the chamber body 202. For example, in some embodiments, the pump liner 260 may be mounted directly on top of the chamber body 202, but in other embodiments, one or more components may be positioned between the pump liner 260 and the chamber body 202. For example, an isolator 290 and / or a lid plate 204 may be positioned between the chamber body 202 and the pump liner 260. In some embodiments, the pump liner 260 may define an annular pump plenum 262. The pump plenum 262 may be a continuous annular region and / or may be formed from a plurality of independent regions arranged in an annular shape around the pump liner 260. The pump liner 260 may define a plurality of exhaust openings 261 that fluidly connect the pump plenum 262 to the interior of the chamber body 202 (e.g., the processing area 210). In some embodiments, the thermal isolator 250 may be positioned between the faceplate 201 and the pump liner 260.

[0042]

[0045] A liner 259 may be positioned between the substrate support 238 and the pump liner 260. For example, the outer surface of the liner 259 may be positioned to abut against the inner surface of the pump liner 260, and the inner surface of the liner 259 may be spaced apart from the outer surface / periphery of the substrate support 238 so that the substrate support 238 can move parallel to the liner 259. The outer surface / periphery of the substrate support 238 and the inner surface of the liner 259 may define a gap that functions as a purge lumen 211. For example, a purge gas source 214 can supply purge gas through a lumen formed in the bottom and / or side walls of the chamber body 202, which helps prevent deposited gas and / or plasma radicals from flowing below the substrate support 238 during the processing steps. The liner 259 may be made of an electrically insulating material such as a ceramic material. In one embodiment, the liner 259 may be made of a ceramic material containing aluminum, such as quartz, aluminum oxide and / or aluminum nitride, and / or any other suitable material. The upper inner edge and / or upper outer edge of the liner 259 may be rounded and / or chamfered, which may help reduce or eliminate surface specificities that may cause flow separation through the purge lumen 211 and / or affect flow uniformity. The size of the purge lumen 211 is constant or substantially constant as shown herein. In some embodiments, the design of the liner 259 can be adjusted to form a purge gas channel with a variable cross-section at one or more positions.

[0043]

[0046] The chamber 200 may include an exhaust assembly 280 connected to the pump plenum 262 of the pump liner 260. The exhaust assembly 280 may include one or more forelines 282 and / or other exhaust lines that can fluidly connect the pump plenum 262 to one or more pumps 286, which may be used to generate negative pressure to draw process gases, purge gases, and / or cleaning gases (and / or their radicals) out of the processing area 210 via the pump liner 260. The forelines 282 may extend through an isolator 290, the chamber body 202, and / or other components positioned between the pump liner 260 and the pumps 286. In some embodiments, the forelines 282 may include a plurality of separate cylindrical (or other cross-sectional) exhaust lumens, and in other embodiments, the forelines 282 may include one or more annular voids or other fluid paths extending along the entire circumference or part of the circumference of the chamber 200. For example, as shown in the figure, the isolator 290 and the chamber body 202 (or other components below the pump liner 260) may each define an annular void that functions as all or part of the foreline 282. The annular void may extend along the entire length of the chamber body 202 and / or extend only to a portion of the depth of the chamber body 202 and transition into one or more smaller foreline sections, such as a cylindrical foreline 282. One or more throttle valves 284 may be connected to the foreline 282 upstream of the pump 286. The throttle valves 284 can control the flow rate and / or pressure in the foreline and help control the flow of gas through the exhaust assembly 280.

[0044]

[0047] In some embodiments, the chamber 200 may include a purge ring 270 which may be located below the pump liner 260 and the faceplate 201. For example, the purge ring 270 may be located above the lid plate 204, the isolator 290, and / or the chamber body 202, with the bottom surface of the pump liner 260 located above the top surface of the purge ring 270. The purge ring 270 may include a ring body having a first top surface and a second bottom surface opposite the first top surface. The ring body may include an outer body 271 and an inner body 273 defining an open interior. The inner body 273 may project downward from the second surface of the ring body and may extend beyond the bottom surface of the outer body 271. For example, the inner body 273 may extend into an annular void of the foreline 282, with the bottom edge of the inner body 273 positioned along the isolator 290. The purge ring 270 may define an annular channel 272 extending around the entire or substantially entire circumference of the ring body. The purge ring 270 may define a plurality of purge ports 274 located at different radial positions around the purge ring 270. The purge ports 274 may be fluidically connected to the annular channel 272. For example, a radial purge channel 276 may extend between the annular channel 272 and one of the purge ports 274, fluidly connecting the annular channel 272 to one of the purge ports 274. In some embodiments, each purge channel 276 may include a horizontal portion extending inward from the annular channel 272 to a position vertically above the purge port 274. The vertical portion may extend downward from the inner edge of the horizontal portion and may be connected to the purge port 274. In other embodiments, other purge channel designs, such as angled channels, may be used. Each purge port 274 is aligned with and fluid-connected to the pump plenum 262. For example, each purge port 274 may open into an annular void in the foreline 282 at a position such as just below the pump liner 260. In some embodiments illustrated herein, each purge port 274 is oriented downward (e.g., within 15 degrees, 10 degrees, 5 degrees, 3 degrees, 1 degree, or less from the vertical), but other angles are possible in various embodiments.For example, the purge ports 274 may be oriented inward and / or angled inward / outward and downward. In some embodiments, each purge port 274 is oriented at the same angle with respect to the central axis inside the open interior of the purge ring 270.

[0045]

[0048] The purge ring 270 defines a gas inlet 278 which may be fluidically connected to an annular channel 272, and a purge gas source 279 may be fluidically connected to the gas inlet 278 via one or more welds 277 and / or other fluid lines, etc. This may allow a purge gas, not limited to O2, to flow from the purge gas source 279 into the foreline 282 through the purge port 274. The flow of purge gas into the exhaust assembly 280 may help reduce the amount of residue that may accumulate on the components of the exhaust assembly 280 (e.g., foreline 282, throttle valve 284, pump 286, etc.), and may further help prevent and / or reduce the accumulation of residue on parts of the chamber components adjacent to the purge ring 270, such as the pump liner 260, substrate support 238, and / or faceplate 201, as much as possible. Reducing residue in the throttle valve 284 helps maintain proper conductance through the throttle valve 284, potentially reducing throttle valve drift and thus reducing the frequency of cleaning processes.

[0046]

[0049] Figures 3A to 3C are cross-sectional views showing exemplary purge rings 300 according to several embodiments of the present technology. The purge ring 300 can be incorporated into any of the aforementioned chambers or systems, as well as any other chambers or systems that may benefit from the purge ring. For example, the purge ring 300 can be used as a purge ring 270, as described in relation to Figure 2, and positioned between the pump liner 260 and the chamber body 202. The purge ring 300 may be similar to the purge ring 270 and may include any of the features described in relation to the purge ring 270. As best shown in Figure 3A (which may be a cross-sectional view of the purge ring, e.g., purge ring 270, cut along line AA in Figure 2), the purge ring 300 may include a ring body 305, which may be formed from a material compatible with the processing chamber, such as but not limited to aluminum. The ring body 305 may be defined by an outer edge 307 and an inner edge 309, the inner edge 309 defining the open interior 301 of the purge ring 300. The inner diameter of the ring body 305 (for example, the diameter of the inner edge 309) may be large enough to create a gap between the inner edge 309 and the periphery of a substrate support placed in a predetermined processing chamber, allowing the substrate support to move parallel to and perpendicular to the purge ring 300.

[0047]

[0050] As best shown in Figure 3B (which may be a cross-sectional view cut along line BB of Figure 3A), the ring body 305 is characterized by a first surface 306 and a second surface 308 opposite to the first surface 306. When installed in a processing chamber, the first surface 306 may face the pump liner and / or faceplate / shower head of the processing chamber, and the second surface 308 may face and be connected to the chamber body of the processing chamber. The ring body 305 may include an outer body 302 and an inner body 304 defining an open interior 301. All or part of the inner body 304 may project downward from the second surface 308 of the ring body 305 and may extend beyond the bottom surface of the outer body 302. For example, the inner body 304 may and / or include a downward-extending rim such that the ring body 305 has a generally L-shaped cross-sectional shape. The inner body 304 may be sized and shaped to extend within an annular void of one or more forelines or other parts of the exhaust assembly of the processing chamber. In some embodiments, the rim portion of the inner body 304 may occupy the entire width of the inner body 304, while in other embodiments, the outer portion of the inner body 304 may extend beyond the bottom surface of the outer body 302, and the innermost portion of the inner body 304 may have a bottom surface aligned with the bottom surface of the outer body 302 and / or otherwise be higher than the bottom surface of the rim.

[0048]

[0051] In some embodiments, either or both of the first surface 306 and the second surface 308 may define one or more annular channels 311 capable of receiving one or more sealing elements, such as O-rings and / or other elastomer elements. For example, the first surface 306 may define an upper annular channel 311a, and the second surface 308 may define a lower annular channel 311b. As shown, the upper annular channel 311a is located within the internal region of the ring body 305, and the lower annular channel 311b is located within the external region of the ring body 305, but other configurations are possible in various embodiments. In some embodiments, the annular channels 311 may have the same size, and in other embodiments, the annular channels 311 may have different sizes. For example, as shown, the upper annular channel 311a has a larger cross-sectional area than the lower annular channel 311b, but other configurations are possible in various embodiments. Although one upper annular channel and one lower annular channel are shown, it will be understood that more or fewer annular channels may be formed on the first surface 306 and / or the second surface 308.

[0049]

[0052] As shown in Figures 3A and 3C (which may be cross-sectional views cut along line CC of Figure 3A), the purge ring 300 may define one or more gas inlets 310. For example, the ring body 305 may include a projection 315 extending laterally outward from the outer surface 307. The projection 315 may define a gas inlet 310 that can provide a place for the fluid lines of one or more gas sources (e.g., gas source 279) to connect with the purge ring 300. In some embodiments, the projection 315 may be located on the top of the lid plate of the processing chamber and / or exposed above or through the lid plate, thereby allowing the fluid lines to be easily connected to / disconnected from the gas inlet 310. The opening of the gas inlet 310 may extend through the side and / or first surface 306 of the projection 315 and / or other parts of the ring body 305. For example, as shown, the gas inlet 310 may extend through the first surface 306. In some embodiments, the gas inlet 310 may include a vertical portion 312 and a horizontal portion 314. For example, the vertical portion 312 may penetrate the first surface 306 and merge with the horizontal portion 314, which may flow into and connect with an annular channel 320 formed within the ring body 305. As best shown in Figure 3A, the annular channel 320 may extend along the entire circumference or a substantial portion of the ring body 305 and the open interior 301. For example, the annular channel 320 may extend around the entire circumference of the ring body 305 and the open interior 301. In other embodiments, the annular channel 320 may be slightly shorter than the entire circumference, for example, extending for 300 degrees or more, 310 degrees or more, 320 degrees or more, 330 degrees or more, 340 degrees or more, 350 degrees or more, 355 degrees or more, or beyond. In some embodiments, instead of having a single annular channel, the purge ring may include one or more recursive channels (e.g., arc channels) extending around the entire or substantially entire circumference of the ring body 305. Any number of arc channels may be provided, each extending around at least a portion of the open interior 301.For example, the ring body 305 may define at least or about one arcuate channel, at least or about two arcuate channels, at least or about three arcuate channels, at least or about four arcuate channels, at least or about five arcuate channels, or more than that number of arcuate channels.

[0050]

[0053] The ring body 305 may define a plurality of purge ports 325 located at different radial positions around the purge ring 300. Each of the purge ports 325 may be fluidically connected to the annular channel 320. For example, the ring body 305 may define a plurality of purge channels 330 located at different radial positions around the purge ring 300. Each purge channel 330 extends between the annular channel 320 and one of the purge ports 325, fluidly connecting the annular channel 320 to one of the purge ports 325, so that each purge port 325 can share a radial position with one of the purge channels 330. As best shown in Figure 3B, each purge channel 330 may include a horizontal portion 332 and a vertical portion 334. For example, the horizontal portion 332 extends radially inward from the annular channel 320 and terminates at a point within the inner body 304. At a point within the inner body 304, for example, aligned with the rim of the inner body 304, the horizontal portion 332 may merge with the vertical portion 334. The vertical portion 334 may extend downward through the rim and / or other bottom surfaces of the inner body 304 and connect to a purge port 325 (which may extend through the bottom surface of the rim or other parts of the inner body 304). The illustration shows a vertical portion 334 and purge port 325 that are vertical or substantially vertical (e.g., within about 15 degrees from the perpendicular, within about 10 degrees from the perpendicular, within about 5 degrees from the perpendicular, within about 3 degrees from the perpendicular, within about 1 degree from the perpendicular, or less), but it will be understood that other angles are possible in various embodiments. In some embodiments, the vertical portion 334 and / or purge port 325 may be angled downward and inward, and in other embodiments, the vertical portion may be omitted, and the horizontal portion 332 may extend and connect directly to a purge port 325 formed in the inner surface 309. As shown in the figure, each exit of the multiple purge ports 325 is angled with respect to a plane that extends throughout the entire annular channel 320, so that the central axis of each purge port 325 is substantially perpendicular to the plane.

[0051]

[0054] The ring body 305 can define any number of purge channels 330 and purge ports 325. For example, the ring body 305 can define at least or about 5 purge channels 330 and purge ports 325, at least or about 10 purge channels 330 and purge ports 325, at least or about 15 purge channels 330 and purge ports 325, at least or about 20 purge channels 330 and purge ports 325, at least or about 25 purge channels 330 and purge ports 325, at least or about 30 purge channels 330 and purge ports 325, at least or about 40 purge channels 330 and purge ports 325, at least or about 50 purge The number of purge channels 330 and purge ports 325 may be defined as at least or about 60 purge channels 330 and purge ports 325, at least or about 70 purge channels 330 and purge ports 325, at least or about 80 purge channels 330 and purge ports 325, at least or about 90 purge channels 330 and purge ports 325, at least or about 100 purge channels 330 and purge ports 325, or more, and the greater the number of purge channels 330 and purge ports 325, the more uniform the flow of purge gas around the open interior 301 may be. The purge channels 330 and purge ports 325 may be arranged around the ring body 305 at regular and / or irregular intervals. For example, in some embodiments, the purge channels 330 and purge ports 325 may be arranged at irregular intervals to account for flow non-uniformity resulting from the asymmetry of the processing chamber due to the position of components such as forelines, slit valves, and / or other chamber components. For example, in areas far from the gas inlet 310, the density of purge ports 325 can be increased to make the flow conductance around the ring body 305 more uniform.In some embodiments, the purge channel 330 and purge port 325 may extend at least or about 270 degrees, at least or about 285 degrees, at least or about 300 degrees, at least or about 315 degrees, at least or about 330 degrees, at least or about 345 degrees, or beyond around the ring body 305, with a wider coverage area allowing for a more uniform distribution of the purge gas around the ring body 305.

[0052]

[0055] The purge ports 325 may be sized and positioned to provide substantially uniform and / or symmetrical flow conductance in the periphery of the open interior 301. In some embodiments, each purge port 325 may have the same cross-sectional area, while in other embodiments, some purge ports 325 may have different cross-sectional areas. As just one embodiment, the cross-sectional area of ​​each purge port 325 can be varied based on the distance of the purge port 325 from the gas inlet 310. For example, purge ports 325 further from the gas inlet 310 may be larger than purge ports 325 closer to the gas inlet 310, which may help promote uniform flow conductance through each purge port 325. In some embodiments, the purge port 325 may have a diameter (or other lateral dimension and / or cross-sectional area corresponding to a circle of a given diameter) of about 100 mils or less, about 90 mils or less, about 80 mils or less, about 70 mils or less, about 60 mils or less, about 50 mils or less, about 40 mils or less, about 30 mils or less, about 20 mils or less, about 10 mils or less, or less. In some embodiments, the annular channel 320 may have a cross-sectional area equal to or greater than the aggregate cross-sectional area of ​​each purge port 325, so that sufficient gas can flow through the annular channel 320, reach each purge port 325 and flow through it, and a substantially uniform flow conductance can be obtained around the ring body 305.

[0053]

[0056] In some embodiments, the purge gas may flow through each fluid port of the purge ring at a velocity of approximately 500 sccm to 5000 sccm, approximately 750 sccm to 2500 sccm, or approximately 1000 sccm to 2000 sccm. The flow rate may depend on the type of purge gas used and / or other process conditions. In some embodiments, the purge gas may include O2, CO2, ozone, and / or other cleaning gases.

[0054]

[0057] The purge ring 300 directs purge gas into the exhaust assembly of the processing chamber during the processing step, reducing or preventing the formation of residual deposits from radicals from the process gas in the exhaust assembly and / or on other chamber components adjacent to the purge ring 300. Furthermore, the purge gas can remove any existing residue. This reduction in residue can reduce the frequency and / or intensity of cleaning steps, potentially extending the lifespan of chamber components. Additionally, reducing deposits near the slot valve of the processing chamber can reduce contamination on the wafer during the transfer process. Moreover, the flow of purge gas can reduce drift of the throttle valve and improve flow conductance through the foreline. Furthermore, the reduction in residual deposits within the throttle valve can reduce the frequency of high-temperature purge gas cleaning of the throttle valve, which can help protect chamber components such as heaters from the purge gas flow.

[0055]

[0058] In some embodiments, the purge ring 300 may include one or more blank-offs 335. The blank-offs 335 can be used to facilitate the manufacture of the purge ring 300 by forming channels (e.g., annular channels 320 and / or purge channels 330) through the outer surface of the ring body 305 and sealing machined openings using the blank-offs 335. For example, a blank-off 335a covering part of an annular channel 320 and / or gas inlet 310 may be joined and sealed in contact with the first surface 306. This may allow the annular channel 320 and / or gas inlet 310 to be formed as a groove or an open-top channel within the first surface 306, and then sealed with the blank-off 335a to form a closed fluid path. Each purge channel 330 may include a blank-off 335b that can seal the opening of the purge channel 330 formed through the periphery of the ring body 305 (e.g., the outer surface 307). This makes it possible to drill or otherwise machine the horizontal portion 332 of each purge channel 330 through the outer surface 307, and the opening in the outer surface 307 is sealed by the blank off 335b.

[0056]

[0059] Figure 4 shows the steps of an exemplary semiconductor processing method 400 according to several embodiments of the present technology. Method 400 can be performed in various processing chambers, including the processing chambers 100 and 200 described above, which may include purging according to embodiments of the present technology, for example, purging rings 270 and 300. Method 400 may include a number of optional steps that may or may not be particularly associated with certain embodiments of the method according to the present technology.

[0057]

[0060] Method 400 may include a processing method that includes a step of forming a hard mask film or other deposition steps. The method may include optional steps prior to the commencement of Method 400, or the method may include additional steps. For example, Method 400 may include steps performed in an order different from the order exemplified. In some embodiments, Method 400 may include flowing one or more precursors or other process gases into the processing chamber in step 405. For example, a precursor may be flowed into a chamber such as one contained in chamber 100 or 200, and the precursor may be flowed through one or more gas boxes, blocker plates, or face plates before being supplied into the processing area of ​​the chamber.

[0058]

[0061] In step 410, plasma can be generated from the precursor within the processing area, for example, by supplying RF power to a faceplate to generate plasma. The material formed in the plasma can be deposited on the substrate in step 415. In step 420, the precursor can be exhausted from the processing chamber through the plenum of a pump liner located at the top of the chamber body of the processing chamber. A purge gas can be flowed into the processing chamber through a plurality of purge ports formed in a purge ring positioned below the pump liner and fluidically connected to the pump liner. For example, the purge gas can be flowed from a purge gas source through one or more purge gas inlets formed in the purge ring. The purge gas then flows through an annular channel and a plurality of purge channels, which guide the purge gas into purge ports, which guide the purge gas downward and / or in a downward angled direction into the chamber's exhaust assembly. The purge gas can prevent and / or remove residue from the process gas flowing into the exhaust assembly and / or other nearby chamber components. Preventing and / or removing such residues can help extend the lifespan of various chamber components, including forelines, throttle valves, and pumps, through which gases can be exhausted. Reducing residue in the throttle valve can help maintain proper conductance through the throttle valve, reducing throttle valve drift and consequently reducing the frequency of cleaning processes.

[0059]

[0062] In some embodiments, the purge gas can be flowed at a rate of approximately 500 sccm to 10,000 sccm (cumulatively through all fluid ports of the purge ring), and the flow rate depends on the type of purge gas used and / or other process conditions. In some embodiments, the purge gas may include O2, CO2, ozone, and / or other cleaning gases. In some embodiments, the purge gas can be flowed after the processing step to clean any residue formed in the lower region of the processing chamber.

[0060]

[0063] The foregoing description includes numerous details to provide an understanding of various embodiments of the Technology for illustrative purposes. However, it will be apparent to those skilled in the art that certain embodiments may be carried out without some of these details, or with additional details.

[0061]

[0064] While several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents can be used without departing from the spirit of the embodiments. Furthermore, to avoid unnecessarily obscuring the Art, some well-known processes and elements have not been described. Therefore, the above description should not be construed as limiting the scope of the Art.

[0062]

[0065] Where a range of values ​​is provided, unless the context explicitly indicates otherwise, each intervening value between the upper and lower limits of that range, down to the smallest unit of the lower limit, is also specifically disclosed. This includes any narrower range between any unlisted intervening value of any listed value or range and any other listed value or intervening value of that range. The upper and lower limits of these smaller ranges may be independently included in or excluded from the range, and each range that includes one or both limits, or neither, is also included in this technique, according to any specifically excluded limits in the listed range. Where a listed range includes one or both limits, ranges that exclude one or both of those included limits are also included.

[0063]

[0066] As used herein and in the appended claims, the singular forms "a," "an," and "the" include plural references unless the context explicitly indicates otherwise. Thus, for example, a reference to "a aperture" includes multiple such apertures, and a reference to "the plate" includes one or more plates and equivalents well known to those skilled in the art.

[0064]

[0067] Furthermore, as used herein and in the following claims, the terms “comprise,” “comprising,” “contain,” “containing,” “include,” and “including” specify the presence of the described feature, integer, component, or process, but do not preclude the presence or addition of one or more other features, integers, components, processes, operations, or groups.

Claims

1. A semiconductor processing chamber, A chamber body having side walls and a base, A pump liner installed on the upper part of the chamber body, the pump liner at least partially defines an annular pump plenum and at least one exhaust opening that fluidly connects the pump plenum to the inside of the chamber body, A purge ring installed below the pump liner, The purge ring defines an annular channel extending around the body of the purge ring, The purging ring defines a gas inlet that is fluidly connected to the annular channel, The purge ring defines a plurality of purge ports located at different radial positions around the purge ring, each of which is aligned with and fluid-connected to the pump plenum, A purge gas source connected to the aforementioned gas inlet and A semiconductor processing chamber equipped with the following features.

2. Exhaust assembly fluidly connected to the pump plenum The semiconductor processing chamber according to claim 1, further comprising the following:

3. The semiconductor processing chamber according to claim 1, wherein each of the outlets of the plurality of purge ports faces downward.

4. Face plate installed on top of the purge ring The semiconductor processing chamber according to claim 1, further comprising the following:

5. A thermal isolator positioned between the faceplate and the purge ring. The semiconductor processing chamber according to claim 4, further comprising the following:

6. The semiconductor processing chamber according to claim 1, wherein the purging ring comprises aluminum.

7. The outer surface of the purge ring includes lateral projections, The gas inlet is located on the lateral projection. The semiconductor processing chamber according to claim 1.

8. A welded section extending between the purge gas source and the gas inlet, connecting the purge gas source to the gas inlet. The semiconductor processing chamber according to claim 7, further comprising:

9. It is purging, The ring body comprises a first surface and a second surface opposite to the first surface, the ring body defining an open interior, The purge ring defines an annular channel extending around the ring body, The purging ring defines a gas inlet that is fluidly connected to the annular channel, A purge ring having defined a plurality of purge ports located at different radial positions around the purge ring, wherein the plurality of purge ports are fluidly connected to the annular channel.

10. The purge ring according to claim 9, wherein the plurality of purge ports provide substantially uniform flow conductance in the peripheral portion of the open interior.

11. The purge ring according to claim 9, wherein the cross-sectional area of ​​the annular channel is equal to or greater than the total cross-sectional area of ​​the plurality of purge ports.

12. The purge ring according to claim 9, wherein the gas inlet is located within a lateral projection extending radially outward from the outer surface of the ring body.

13. The purge ring according to claim 9, wherein the plurality of purge ports are arranged at irregular intervals in the peripheral part of the open interior.

14. The purge ring according to claim 9, wherein at least some of the plurality of purge ports have different cross-sectional areas.

15. The purge ring according to claim 9, wherein each outlet of the plurality of purge ports is angled with respect to a plane that extends throughout the entire annular channel.

16. The purge ring according to claim 15, wherein each of the plurality of purge ports is substantially perpendicular to the plane.

17. The purge ring according to claim 9, wherein the purge ring defines a plurality of purge channels, and each of the plurality of purge channels extends between the annular channel and one of the plurality of purge ports, thereby fluidly connecting the annular channel and one of the plurality of purge ports.

18. A substrate processing method, The process involves flowing the precursor into the processing chamber, Generating the plasma of the precursor within the processing area of ​​the processing chamber, Depositing material onto a substrate placed within the processing area, The precursor is exhausted from the processing chamber through the plenum of the pump liner located at the top of the chamber body of the processing chamber, The purge gas is flowed into the plenum of the pump liner through a plurality of purge ports formed in a purge ring positioned below the pump liner. A method that includes this.

19. The precursor and the purge gas are exhausted from the processing chamber and the pump liner via the foreline, throttle valve, and pump. The substrate processing method according to claim 18, further comprising:

20. The aforementioned purge gas is O ２ The substrate processing method according to claim 18, including the method described in claim 18.

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