Method for measuring process parameters in monitoring equipment and monitoring systems, and cassette used in monitoring systems

Abstract

A monitoring system and a method for measuring process parameters therein are disclosed. [Solution] The first monitoring device used in the monitoring system includes a sensor for measuring process parameters, a communication unit, and a control unit. Here, the first monitoring device is arranged on the object under diagnosis and measures the process parameters of the object under diagnosis using the sensor, and an edge ring is arranged on the outside of the object under diagnosis, and the control unit transmits a measurement recipe command via the communication unit to the edge ring or a second monitoring device that measures the process parameters of the edge ring, and the measurement recipe command is a command that controls the edge ring or the second monitoring device to measure the process parameters.

Description

Technical Field

[0001] The present invention relates to a monitoring system and a method for measuring process parameters in the monitoring system.

Background Art

[0002] As the structure of semiconductor devices changes from the existing planar type to a 3D structure and the size of the critical dimension decreases to the nanoscale, the difficulty of semiconductor processes has increased rapidly. Therefore, it is necessary to precisely control the temperature of the wafer. However, since the wafer edge abuts against the vacuum atmosphere in the chamber and the size of the electrostatic chuck is smaller than the wafer, it is difficult to control the temperature of the wafer edge portion.

[0003] Therefore, in order to more precisely control the temperature distribution of the wafer, an annular edge ring is arranged on the outer shell portion of the wafer as shown in FIG. 1. Further, depending on the situation, a heater is arranged below the edge ring to control the temperature of the edge ring. However, since there is no technology that can accurately measure the temperature distribution of the edge of the wafer until now, the wafer cannot be precisely controlled.

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present invention provides a monitoring system and a method for measuring process parameters therein.

Means for Solving the Problems

[0005] To achieve the aforementioned objectives, a first monitoring device used in a monitoring system according to one embodiment of the present invention includes a sensor for measuring process parameters, a communication unit, and a control unit. Here, the first monitoring device is arranged on a body to be diagnosed and measures the process parameters of the body to be diagnosed using the sensor, an edge ring is arranged on the outside of the body to be diagnosed, the control unit transmits a measurement recipe command via the communication unit to the edge ring or a second monitoring device that measures the process parameters of the edge ring, the measurement recipe command is a command that controls the edge ring or the second monitoring device to measure the process parameters.

[0006] A second monitoring device used in a monitoring system according to one embodiment of the present invention includes a sensor for measuring process parameters, a communication unit, and a control unit. Here, the second monitoring device is an edge ring arranged on the outside of a chuck and is communicated with a first monitoring device arranged on the chuck for measuring process parameters of the chuck, the control unit controls the sensor to measure the process parameters based on a measurement recipe command transmitted from the first monitoring device via the communication unit, and transmits measurement data relating to the measured process parameters to the first monitoring device or an external device.

[0007] A method for measuring process parameters in a monitoring system comprising a first monitoring device arranged on a body to be diagnosed and a second monitoring device arranged outside the body to be diagnosed and functioning as an edge ring, according to one embodiment of the present invention, includes the steps of: arranging the first monitoring device on the body to be diagnosed; the first monitoring device transmitting a measurement recipe command to the second monitoring device; the second monitoring device independently measuring process parameters based on the transmitted measurement recipe command; the second monitoring device transmitting second measurement data relating to the measured process parameters to the first monitoring device; and the first monitoring device transmitting the transmitted second measurement data to an external device.

[0008] A method for measuring process parameters in a monitoring system according to another embodiment of the present invention includes the steps of: an edge ring including at least one sensor and a communication unit independently measuring process parameters using the sensor; and the edge ring transmitting measurement data relating to the measured process parameters to an external device. Here, the measurement data is transmitted to the external device after the edge ring has been moved outside the chamber.

[0009] A method for measuring process parameters in a monitoring system according to another embodiment of the present invention includes the steps of: communicating and connecting a station in a cassette with a monitoring device; the station receiving measurement data from a monitoring device that has measured the process parameters of an element in a chamber; and the station transmitting the received measurement data to an external device. Here, the station receives the measurement data from the monitoring device while the monitoring device is securely installed in the cassette.

[0010] A cassette used in a monitoring system according to one embodiment of the present invention includes a plurality of slits and a station. In this system, a monitoring device is mounted on the slits, the monitoring device measures process parameters of elements in a chamber, the station receives measurement data relating to the measured process parameters from the mounted monitoring device, and transmits the received measurement data to an external device. [Effects of the Invention]

[0011] The monitoring system and process parameter measurement method in the monitoring system according to the present invention measure the process parameters of the chuck using a first monitoring device and measure unique process parameters using a second monitoring device (edge ​​ring). As a result, the monitoring system can measure the temperature distribution from the center of the chuck (center of the wafer) to the edge ring in one go. Therefore, the wafer can be precisely temperature-controlled. [Brief explanation of the drawing]

[0012] [Figure 1] This is a diagram illustrating the structure of a typical chamber. [Figure 2] This is a diagram illustrating the structure of a chamber according to one embodiment. [Figure 3] This is a diagram illustrating a first monitoring device according to one embodiment of the present invention. [Figure 4] This is a diagram illustrating a first monitoring device according to one embodiment of the present invention. [Figure 5] This is a diagram illustrating a second monitoring device according to one embodiment of the present invention. [Figure 6] This is a diagram illustrating a second monitoring device according to one embodiment of the present invention. [Figure 7] This is a diagram illustrating a second monitoring device according to one embodiment of the present invention. [Figure 8] This is a diagram illustrating a second monitoring device according to one embodiment of the present invention. [Figure 9] A drawing illustrating a second monitoring device according to an embodiment of the present invention. [Figure 10] A drawing illustrating a second monitoring device according to an embodiment of the present invention. [Figure 11] A flowchart illustrating the measurement process of process parameters in a monitoring system according to an embodiment of the present invention. [Figure 12] A flowchart illustrating the measurement process of process parameters in a monitoring system according to another embodiment of the present invention. [Figure 13] A cross-sectional view illustrating a wafer cassette according to an embodiment of the present invention. [Figure 14] A flowchart illustrating the operation of the wafer cassette of FIG. 13. [Figure 15] A block diagram illustrating a first monitoring device according to an embodiment of the present invention. [Figure 16] A block diagram illustrating a second monitoring device according to an embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0013] As used herein, singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "configured" or "including" should not be construed as necessarily including all of the plurality of components or steps described in the specification. Some of the components or steps may not be included, or additional components or steps may be further included. Also, terms such as "... part" and "module" described in the specification mean a unit that processes at least one function or operation, which can be implemented by hardware or software, or by a combination of hardware and software.

[0014] The present invention relates to a monitoring system and a method for measuring process parameters therein, and includes, for example, a first monitoring device that measures the temperature distribution, inclination, etc. of a diagnostic object, such as an electrostatic chuck, in a semiconductor process or a display process, and a second monitoring device that measures the temperature distribution, etc. of an edge ring. Here, the second monitoring device can be an edge ring having an independent temperature monitoring function.

[0015] In addition, the first monitoring device can measure the state of RF voltage, current, or power in a plasma state and finally determine an abnormal state of the electrostatic chuck.

[0016] According to one embodiment, the first monitoring device can be a wafer-type monitoring device, which measures the temperature distribution, etc. of a wafer region corresponding to a wafer placed on a chuck in a subsequent process, and the second monitoring device can measure the temperature distribution, etc. of a region of an edge ring outside the wafer region. As a result, the monitoring system can measure process parameters, such as temperature distribution, from a region corresponding to the center of the wafer to the edge ring region at one time. Therefore, the temperature of the wafer can be precisely controlled.

[0017] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 2 is a drawing illustrating the structure of a chamber according to an embodiment, FIGS. 3 and 4 are drawings illustrating a first monitoring device according to an embodiment of the present invention, and FIGS. 5 to 10 are drawings illustrating a second monitoring device according to an embodiment of the present invention.

[0018] Referring to FIG. 2, below the internal space of the chamber 200, for example, a chuck, such as an electrostatic chuck 202, can be located, and a shower head can be located above.

[0019] According to one embodiment, a first monitoring device 204 is arranged on the electrostatic chuck 202, and a second monitoring device (edge ​​ring) 206, for example, circular in shape, and a heater 210 can be arranged on the outside of the electrostatic chuck 202. Of course, a heater for heating the wafer can also be arranged inside the electrostatic chuck 202.

[0020] The first monitoring device 204 measures process parameters, particularly temperature distribution, of the object being diagnosed, such as the electrostatic chuck 202, while the second monitoring device 206 can independently measure process parameters, particularly temperature distribution.

[0021] Below, we will examine the first monitoring device 204 in detail, and then the second monitoring device 206 in detail. Referring to Figure 3, the first monitoring device 204 may include a lower cover 300, an upper cover 302, a circuit module, a guide cover 310, a first filler 312, a second filler 314, a first EMI shielding layer 316, a first adhesive layer 318, a second EMI shielding layer 320, and a second adhesive layer 322. Here, the circuit module includes a PCB substrate 304, an electronic component section 306, and a sensor 308.

[0022] The lower cover 300 can protect the elements on the PCB substrate 304 from the external environment, such as the plasma environment, and protect the chamber from contamination generated by the elements.

[0023] According to one embodiment, the lower cover 300 can have a circular shape identical to that of the wafer, have a flat surface, and be made of materials commonly used in semiconductor processes, such as silicon or glass. Alternatively, the lower cover 300 can be made of silicon carbide, sapphire, ceramic materials such as Y2O3, YOF, Al2O3, or engineering plastics such as Teflon®, PEEK, or carbon fiber.

[0024] Since the lower cover 300 is in direct contact with the electrostatic chuck 202, which is the object to be diagnosed, the lower cover 300 can have the same flatness as the silicon wafer.

[0025] The upper cover 302 protects the elements on the PCB substrate 304 from the external environment on its upper surface and can be formed from the same or similar material as the lower cover 300. For example, the upper cover 302 can be made from silicon, glass, silicon carbide, sapphire, ceramic-based materials such as Y2O3, YOF, Al2O3, or engineering plastics such as Teflon®, PEEK, or carbon fiber.

[0026] According to one embodiment, the deflection characteristic of the lower cover 300 or the upper cover 302 can be 100 μm or less, and the total thickness variation (TTV) can be 10 μm or less.

[0027] The PCB substrate 304 is arranged between the lower cover 300 and the upper cover 302 and can be an FR-4, Flexible PCB (FPCB), or the like.

[0028] The electronic component section 306 is arranged on the PCB substrate 304 and may include at least one electronic component. For example, the electronic component section 306 may include a microprocessor, a signal processing device, a wireless communication element, or a wireless charging element.

[0029] The sensor 308 is a type of electronic element that can be arranged on the PCB substrate 304. Some sensors can be included inside the electronic element section 306, while others can be located outside the electronic element section 306. In other words, as long as the sensor 308 measures process parameters such as temperature distribution and is located on the PCB substrate 304, there are no positional restrictions.

[0030] According to one embodiment, the sensor 308 can be arranged in the region corresponding to the extreme edge. Here, the extreme edge can be a region from 1.5 mm to 3 mm from the edge of the wafer, and of course, such a length can vary depending on the size of the wafer. That is, the first monitoring device 204 can measure the characteristics of the edge region of the electrostatic chuck 202 that corresponds to the extreme edge region of the wafer used in subsequent processes.

[0031] Of course, the sensor 308 can also measure the characteristics of the central part of the electrostatic chuck 202, which corresponds to the central part of the wafer. In other words, at least one sensor 308 can measure characteristics such as the temperature distribution of the object to be diagnosed, which corresponds to the area from the center to the edge region of the wafer.

[0032] The guide cover 310 is arranged on the side of the first monitoring device 204 to protect electronic components and the like, and can have a circular shape similar to that of a wafer, for example, as shown in Figure 4.

[0033] According to one embodiment, as shown in Figure 4, a groove (notch) 400 can be formed in a part of the guide cover 310, and a groove can also be formed in the PCB substrate 304 located inside the guide cover 310. As a result, by aligning the groove 400 of the guide cover 310 with the groove of the PCB substrate 304, the PCB substrate 304 can be easily aligned inside the guide cover 310. In other words, the groove 400 is an alignment reference point.

[0034] According to one embodiment, the section connecting the upper cover 302, the guide cover 310, and the lower cover 300, that is, the section where the upper cover 302, the guide cover 310, and the lower cover 300 are all present, can also cool the PCB substrate 304 and the circuit module from the heat source. For this purpose, the upper cover 302, the guide cover 310, and the lower cover 300 can have the same or similar thermal conductivity as silicon.

[0035] For example, the guide cover 310 can be made of a silicon wafer, silicon cadide, sapphire, ceramic-based materials such as Al2O3, YOF, and Y2O3, or engineering plastics such as PEEK, Teflon®, and carbon fiber.

[0036] The first filler 312 can be filled between the electronic elements of the electronic element section 306, between the electronic element section 306 and the sensor 308, between the sensors 308, or between the sensor 308 and the guide cover 310.

[0037] According to one embodiment, the first filler 312 can be solid and can be made of the same or similar material as the upper cover 302 or the lower cover 300. That is, the first filler 312 can have the same or similar thermal conductivity as the upper cover 302 or the lower cover 300, and as a result, it is possible to accurately sense the heat generated by ion shocks on the surface of the upper cover 302 when plasma is generated in the chamber 200.

[0038] If the first filler 312 is formed in solid form, silicon-based materials such as Si or SiC can be used as the first filler 312, and materials with similar coefficients of thermal expansion to Si or SiC, such as PEEK, glass, ceramic, or quartz, can also be used. The reason for using such materials is to maximize the sensitivity of the sensor 308 in terms of thermal conductivity or heat flux when measuring temperature.

[0039] In other embodiments, the first filler 312 can also be formed in liquid form. In this case, a curing resin-based material can be used as the first filler 312, for example, epoxy or a silicon-based substance can be used. The reason for using such a liquid-formed first filler 312 is to compensate for the height differences between electronic elements on the PCB substrate 304 and ensure flatness. For example, after applying the liquid-formed first filler 312 onto the electronic element or sensor 308, a polishing process can be applied to flatten the first filler 312 on the electronic element or sensor 308.

[0040] The second filler 314 can be formed on an electronic element, a sensor 308, or the first filler 312. According to one embodiment, the second filler 314 can be formed in liquid form, for example, from epoxy, a silicon-based material, or a UV-curing material. The reason for using the second filler 314 in liquid form is to compensate for the differences in height between the electronic elements and the sensor 308, thereby ensuring flatness. Of course, the second filler 314 can also be formed in solid form.

[0041] From another perspective, the fillers 312 and 314 can be sealed by covering the electronic components and sensors 308 on the PCB substrate 304.

[0042] According to one embodiment, after applying a first filler 312 or a second filler 314 onto an electronic element (including a sensor) with a relatively low height, the upper surfaces of the first filler 312 and the second filler 314 can be polished to make the upper surfaces of the fillers 312 and 314 flat. For such flattening, the first filler 312 or the second filler 314 that has been filled to a certain height or higher can be removed, and in some cases, even the surface of the electronic element can be polished during the polishing process. In other words, even if the heights of the electronic elements are different, by applying the filler 312 or 314 onto the electronic element and polishing it, the upper surfaces of the fillers 312 or 314 and the first filler 312 arranged on the electronic element and sensor can be made to be the same height. That is, the upper surface of the structure including the electronic element, sensor, and fillers 312 and 314 can be made flat.

[0043] According to another embodiment, the upper surface of the structure may have the same height as the upper surface of the guide cover 310. That is, the height of the tallest electronic element, the height of the electronic element filled with filler 312 or 314, the height of the first filler 312, and the height of the guide cover 310 may be the same.

[0044] The first EMI shielding layer 316 is located between the PCB substrate 304 and the lower cover 300 and can protect electronic components from electrical noise caused by plasma generated during the semiconductor manufacturing process. Here, the first EMI shielding layer 316 can be formed by coating a liquid material or by forming a film, and can be formed from materials such as gold, silver, copper, aluminum, or mixtures thereof.

[0045] Such a first EMI shielding layer 316 can be bonded to the lower cover 300 via a first adhesive layer 318. Here, the first adhesive layer 318 can be an acrylic or silicone-based adhesive.

[0046] The second EMI shielding layer 320 is arranged on the filler 312 or 314 and the highest electronic element to protect the electronic element from electrical noise. Here, the second EMI shielding layer 320 can be formed by coating a liquid material or by forming a film, and can be formed from a material such as gold, silver, copper, aluminum, or a mixture thereof.

[0047] Such a second EMI shielding layer 320 can be bonded to the upper cover 302 via a second adhesive layer 322, where the second adhesive layer 322 can be an acrylic or silicone-based adhesive.

[0048] A second monitoring device 206 is located outside of the first monitoring device 204. The second monitoring device 206 also functions as an edge ring, and for the sake of explanation, it will be referred to as an edge ring below.

[0049] Referring to Figures 5 and 6, the edge ring 206 can have an annular shape and may include a lower cover 600, an upper cover 602, a first circuit board 604, a first electronic element section 606, a first filler 608, and a second filler 610.

[0050] The lower cover 600 may have a vertically upright "U" shape. That is, the lower cover 600 includes a bottom surface and side portions formed vertically at both ends of the bottom surface, and as a result, electronic elements and the like can be arranged in the inner space of the lower cover 600.

[0051] Such a structure for the lower cover 600 can prevent foreign objects from penetrating into the interior of the lower cover 600. Therefore, as long as the lower cover 600 includes a bottom surface and side surfaces, there are no restrictions on the shape of the lower cover 600.

[0052] According to one embodiment, the lower cover 600 can be manufactured by laser processing or wet etching or the like, so as to have an inner space on which electronic elements and the like can be arranged.

[0053] According to one embodiment, the lower cover 600 can be formed from the same or similar material as the wafer. For example, the lower cover 600 can be formed from silicon-based Si or SiC or glass-based quartz. This is to ensure stable heat transfer from the edge ring 206 to the wafer. Of course, the material of the lower cover 600 is not limited to the same or similar material as the wafer.

[0054] The upper cover 602 is formed on the lower cover 600 and can be joined to the lower cover 600, for example, by using an adhesive layer 614 formed with adhesive. Of course, bonding is not limited to adhesive, and the upper cover 602 and the lower cover 600 can be deformed in various ways as long as they are joined together.

[0055] Here, since the adhesive is used inside the chamber 200, it can have low outgassing properties, and a material with chemical resistance to fluorine-based etching gases can be used as the adhesive. For example, acrylic or silicon-based materials can be used as the adhesive.

[0056] Furthermore, for degassing purposes, the upper cover 602 and the lower cover 600 can be partially shaped as shown in Figure 8. For example, a protrusion can be formed on the lower surface of the upper cover 602 and a groove can be formed on the upper surface of the lower cover 600, with the protrusion being inserted into the groove to join the upper cover 602 and the lower cover 600.

[0057] Such an upper cover 602 can also be formed from the same or similar material as the wafer, for example, silicon-based Si or SiC.

[0058] According to one embodiment, the shape of the upper cover 602 can be similar to the shape of an existing edge ring. That is, as shown in Figure 6, the inner portion 602a on the lower surface of the upper cover 602 can be formed flat corresponding to the outermost shell portion of the wafer, and the remaining portion of the upper cover 602 can be formed diagonally upward from the end of the inner portion 602a. As a result, the remaining portion of the upper cover 602 excluding the lower surface can be smaller than the width of the lower cover 600, and the upper cover 602 can have a structure in which the width narrows towards the top surface. Of course, the upper cover 602 can also have a shape different from the existing edge ring shape.

[0059] In another embodiment, the surface of the upper cover 602 can be coated with a chemical-resistant or corrosion-resistant coating. Here, ceramic materials such as YOF, Al2O3, Y2O3, and YAG can be used as the coating agent. On the other hand, the lower cover 600 can also be coated in the same way.

[0060] The circuit board 604 (for example, a PCB board) can be arranged in the inner space of the lower cover 600. According to one embodiment, the circuit board 604 can be bonded to the bottom surface of the lower cover 600 via the adhesive of the adhesive layer 612. Here, the adhesive can have low degassing properties, and a material having chemical resistance to fluorine-based etching gases can be used as the adhesive. For example, acrylic or silicon-based materials can be used as the adhesive.

[0061] The thickness of such a circuit board 604 can be variably set according to the thickness of the edge ring 206. The electronic component section 606 is arranged on the circuit board 604 in the inner space of the lower cover 600 and may include at least one electronic component.

[0062] For example, the electronic component 606 includes a temperature sensor capable of measuring the temperature distribution of the lower cover 600, and may additionally include at least one of a microprocessor, a wireless communication element, a wireless charging element, a wireless power supply, a battery in the form of a semi-solid or all-solid-state, and a memory.

[0063] According to one embodiment, the electronic element can be sealed. Specifically, the electronic element can be sealed by a first filler 608 and a second filler 610, as shown in Figure 6. In this case, the upper surface of the second filler 610 is flat, and an adhesive layer 614 can be arranged on the second filler 610.

[0064] The first filler 608 can cover the sides of an electronic element on the circuit board 604, or at least a portion of the sides and upper surface. Such a first filler 608 can make the height of the uppermost part of the electronic element the same. For example, the first filler 608 can be applied to the other electronic elements with the tallest electronic element as the reference, so that the height of the first filler 608 applied to the tallest electronic element and the relatively lower electronic elements can be made the same.

[0065] Such a first filler 608 can be formed in solid or liquid form. When the first filler 608 is formed in solid form, silicon-based materials such as Si or SiC can be used as the first filler 608, and materials with similar thermal expansion coefficients to Si or SiC, such as PEEK, Glass, Ceramic, or Quartz, can also be used. The reason for using such materials is to maximize the sensitivity of the sensor in terms of thermal conductivity or heat flux during temperature measurement. Of course, the material of the first filler 608 is not limited to these.

[0066] However, since the first filler 608 is solid, the first filler 608 and the circuit board 604 can be bonded together using the aforementioned adhesive. If the first filler 608 is formed in liquid form, a curing resin-based material can be used as the first filler 608, for example, epoxy or a silicon-based substance can be used. The reason for using such a liquid-formed first filler 608 is to compensate for the height differences between electronic elements on the circuit board 604 and to ensure flatness. For example, after filling the electronic elements with the liquid-formed first filler 608, a polishing process can be applied to flatten the first filler 608 on the electronic elements.

[0067] On the other hand, if the first filler 608 is formed from a liquid, a material with a low thermal shrinkage rate can be used as the material for the first filler 608, provided that the hardness of the first filler 608 is 80D or higher.

[0068] The second filler 610 can be arranged from the height of the tallest of the electronic elements up to the height of the upper edge of the lower cover 600, and can be formed of a solid or liquid. As a result, the height of the upper edge of the lower cover 600 and the height of the upper edge of the second filler 610 can be the same.

[0069] The material used for this second filler 610 can be the same as or similar to the material used for the first filler 608. On the other hand, the same filler can also cover the electronic components in the inner space of the lower cover 600.

[0070] In summary, the edge ring 206 of this embodiment performs the functions of existing edge rings while also arranging electronic elements such as temperature sensors in the inner space of the lower cover 600, enabling it to measure temperature independently. As a result, the edge ring 206 can detect the temperature characteristics of the heater 210 located below it based on the measured temperature. By utilizing these detection results, the amount of heating of the electrostatic chuck 202 or the heater 210 corresponding to the outermost shell of the wafer can be finely adjusted, thereby improving process yield.

[0071] According to another embodiment, the edge ring 206 may include a lower cover 600, an upper cover 602, a second circuit board 704, a second electronic element section 706, a first filler 708, a second filler 710, a first adhesive layer 712, and a second adhesive layer 714, as shown in Figure 7.

[0072] Unlike the embodiment shown in Figure 6, the electronic elements can be formed in the inner space of the upper cover 602 rather than in the inner space of the lower cover 600. Such a lower cover 600 can be bonded to the upper cover 602 via a first adhesive layer 712. Of course, as long as the lower cover 600 is bonded to the upper cover 602, it can be deformed in various ways, not limited to methods using adhesive.

[0073] Furthermore, the material of the adhesive can be the same as or similar to that of the adhesive in Figure 6. A second filler 710 can be arranged on the first adhesive layer 712 in the inner space of the upper cover 602. The material of the second filler 710 can be the same as or similar to the second filler 610 in Figure 6.

[0074] The electronic elements of the electronic element section 706 can be arranged on the second filler 710 in the inner space of the upper cover 602. Here, the electronic elements include a temperature sensor and the like.

[0075] The first filler 708 can cover the side and top surfaces of the electronic elements so that their heights are the same. Here, the material of the first filler 708 can be the same as or similar to the material of the first filler 608 in Figure 6.

[0076] A second circuit board 704 is arranged on the aforementioned electronic elements, and the circuit board 704 can be bonded to the inner surface of the upper cover 602 via a second adhesive layer 714. Of course, the bonding of the circuit board 704 and the upper cover 602 is not limited to the method using adhesive and can be modified in various ways.

[0077] Furthermore, the material of the adhesive can be the same as or similar to that of the adhesive in Figure 6. On the other hand, the arrangement within the inner space of the upper cover 602, when viewed from the top surface, is such that electronic elements are arranged on the circuit board 704, and the fillers 708 and 710 can seal the electronic elements.

[0078] In summary, the edge ring 206 of this embodiment allows the circuit board 704 and electronic elements to be arranged within the upper cover 602. As a result, the temperature sensor is located at the upper end of the edge ring 206. In this case, the edge ring 206 can not only measure temperature independently, but also measure the heat distribution generated during ion bombardment applied to the wafer in a plasma state within the chamber 200.

[0079] In further embodiments, the edge ring 206 may include a lower cover 600, an upper cover 602, a first circuit board 604, a second circuit board 704, a first electronic element, and a second electronic element, as shown in Figure 8. That is, the edge ring 206 of this embodiment is a combined structure of Figures 6 and 7, in which the circuit boards 604 and 704 and the electronic element can be arranged in the inner spaces of the lower cover 600 and the upper cover 602, respectively. The material of the elements may be the same as or similar to that of the embodiments described above, although this will not be described in detail below.

[0080] The lower cover 600 and the upper cover 602 can be joined using adhesive, or they can be joined using grooves and protrusions. In other words, various joining methods can be used as long as the covers 600 and 602 are joined together.

[0081] Furthermore, to prevent etching of the edge ring surface during the plasma etching process, the upper cover 602 may be coated with a ceramic or polymer-based material. In this case, the lower cover 600 may or may not be coated.

[0082] The first electronic element is formed on the first circuit board 604 and can be sealed with a filler. Among such first electronic elements, the first temperature sensor measures the temperature distribution of the lower cover 600, and the first electronic element may additionally include a battery, a microprocessor, and the like.

[0083] According to one embodiment, as shown in Figure 9, an RF coil 900 can be formed on the first circuit board 604. Such a coil 900 can perform the functions of a wireless communication transmitting / receiving unit or a wireless charging receiving unit.

[0084] According to one embodiment, as shown in Figure 10, the first circuit board 604 and the second circuit board 704 can be electrically connected via at least one connector 1010. As a result, if a power source or battery is present in one of the circuit boards 604 and 704, power can be supplied to the other circuit board. Although not shown in Figure 9, the lower edge ring cover portion of Figure 6 and the upper cover portion of Figure 7 can also be joined together, and the same function as in Figure 8 can be realized by applying a wireless communication method.

[0085] Although not shown in Figure 9, the inner space of the lower cover 600 and the inner space of the upper cover 602 can be filled with a filler to seal the corresponding electronic element.

[0086] In another embodiment, as shown in Figure 10, a single space can be formed between circuit boards 604 and 704 without separate fillers for sealing the first electronic element and the second electronic element, and this space can be filled with the same filler. Here, the filler can be made of a material with high thermal conductivity.

[0087] If the hardness of the filler is 80D or higher, materials such as silicon or epoxy can be used as the filler, or materials with low degassing properties can be used.

[0088] In further embodiments, a first EMI shielding layer 1000 may be present between the lower cover 600 and the first circuit board 604 to protect electronic elements from plasma electromagnetic waves, and a second EMI shielding layer 1002 may be present between the upper cover 602 and the second circuit board 704.

[0089] On the other hand, the EMI shielding layers 1000 and 1002 can perform not only electromagnetic shielding but also adhesive functions without the need for a separate adhesive layer to bond the covers 600 and 602 to the circuit boards 604 and 704.

[0090] To summarize, the edge ring 206 of this embodiment includes temperature sensors at the top and bottom, respectively, and as a result, it can measure both the temperature distribution at the top and the temperature distribution at the bottom. In this case, the edge ring 206 can measure not only the temperature distribution of the covers 600 and 602, but also the heat flux from top to bottom or the heat velocity from bottom to top.

[0091] By measuring the temperature distribution or heat flow rate of the edge ring 206 in this manner, the amount of heating of the electrostatic chuck 202, which corresponds to the outermost shell of the wafer, can be finely adjusted. That is, the heater heating the electrostatic chuck 202 and the heater 210 at the bottom of the edge ring 206 can be adjusted to apply heat evenly to the wafer. As a result, the process yield of the wafer can be improved.

[0092] In the embodiments described above, the upper cover and lower cover were described as existing separately, but the upper cover and lower cover can also be realized as an integrated unit.

[0093] On the other hand, although the second monitoring device 206 was described above as an edge ring, it is also possible for a separate edge ring to exist, with the second monitoring device 206 arranged on the edge ring to measure the process parameters of the edge ring. In this case, the second monitoring device 206 includes at least one electronic element and a sensor, and the electronic element or the sensor may be sealed with a filler.

[0094] Figure 11 is a flowchart illustrating the process of measuring process parameters in a monitoring system according to one embodiment of the present invention. Generally, in semiconductor manufacturing processes, wafers are repeatedly transported into and out of the chamber for each process, while the edge ring (second monitoring device) 206 is only replaced when a problem occurs in the chamber or when parts are replaced. In accordance with these circumstances, the first monitoring devices 204 arranged on the chuck 202 can be transported into and out of the chamber for each process, while the second monitoring device 206 can remain in use for several processes. Figure 11 illustrates the process of measuring process parameters in such an environment.

[0095] When a data measurement command is entered (S1100), the first monitoring device 204 is placed into the chamber 200 (S1102). Specifically, the first monitoring device 204 is arranged on the chuck 202 on which the wafer will be placed in subsequent processes.

[0096] According to one embodiment, the first monitoring device 204 may include measurement recipe information for the second monitoring device 206. Next, it is determined whether or not to perform independent measurements with the first monitoring device 204 (S1104). Of course, whether or not to perform independent measurements may have already been determined when the first monitoring device 204 is activated.

[0097] When the first monitoring device 204 is performing a single measurement, the first monitoring device 204 can measure process parameters of the chuck 202, such as the temperature distribution S1106. Next, once the first monitoring device 204 acquires data, the first monitoring device 204 is removed from the chamber 200 (S1108), and the first monitoring device 204 can transmit the measured process parameter data to an external device, such as a wafer cassette station or management server (S1110). Details regarding this transport and data transmission will be described later.

[0098] If the measurement is not performed by the first monitoring device 204 alone, that is, if measurement by the second monitoring device 206 is required, the first monitoring device 204 can transmit the measurement recipe command included in the measurement recipe information to the second monitoring device 206 (S1114).

[0099] Next, the second monitoring device 206 switches from standby mode to measurement mode based on the transmitted measurement recipe command, and then measures its own process parameters, such as temperature distribution (S1116).

[0100] Next, the second monitoring device 206 transmits the measurement data regarding the measured process parameters to the first monitoring device 204 (S1118). As a result, the first monitoring device 204 can include its own measured data and the data measured by the second monitoring device 206.

[0101] Next, the first monitoring device 204 can transmit at least one of the aforementioned data to an external device (S1110).

[0102] To summarize, the monitoring system of this embodiment includes measurement recipe information for the first monitoring device 204 to control the second monitoring device 206, the second monitoring device 206 to transmit measurement data to the first monitoring device 204, and the first monitoring device 204 to transmit its own measured data and the data measured by the second monitoring device 206 to an external device.

[0103] In other embodiments, the second monitoring device 206 is activated based on a measurement recipe command transmitted from the first monitoring device 204, but the measurement data can also be transmitted directly to the external device without being transmitted to the first monitoring device 204. However, considering the overall communication structure of the monitoring system, it is efficient for the data measured by the second monitoring device 206 to be transmitted to the external device via the first monitoring device 204.

[0104] In the above description, the second monitoring device 206 was used as an edge ring, but it is also possible for a separate edge ring to exist, with the second monitoring device 206 positioned on the edge ring to measure the process parameters of the edge ring.

[0105] Figure 12 is a flowchart illustrating the process of measuring process parameters in a monitoring system according to another embodiment of the present invention. Figure 12 illustrates the monitoring process when only the edge ring is placed inside the chamber 200. Referring to Figure 12, the edge ring 206 is inserted into the chamber 200 based on the data measurement command (S1200). Specifically, the edge ring 206 is positioned outside the chuck 202.

[0106] Next, the edge ring 206 measures its own process parameters (S1202) and is then transported outside the chamber 200 (S1204). Next, the edge ring 206 can transmit measurement data to an external device S(1206).

[0107] To summarize, after the edge ring 206 is placed in the chamber 200, process parameters are measured and then it is transported to the outside, and the measurement data can then be transmitted to the external device.

[0108] On the other hand, if a second monitoring device and edge ring 206 are present separately, the second monitoring device can be placed inside the chamber 200 to measure the process parameters of the edge ring 206, then transported outside, and subsequently the measurement data can be transmitted to an external device.

[0109] Figure 13 is a cross-sectional view illustrating a wafer cassette according to one embodiment of the present invention, and Figure 14 is a flowchart illustrating the operation of the wafer cassette in Figure 13. Referring to Figure 13, the wafer cassette of this embodiment can be located within an airlock chamber in a semiconductor device and may include multiple slits.

[0110] According to one embodiment, a wafer and monitoring equipment 204 or 206 can be located in a portion of the slits of the wafer cassette, and a station can be arranged at the lowest end of the wafer cassette. More efficiently, the monitoring equipment 204 or 206 can be arranged at the lower end of the wafer cassette, and at least one wafer can be arranged in a slit located above the slit where the monitoring equipment 204 or 206 is located.

[0111] The station can supply power to monitoring equipment 204 or 206 and transmit measurement data provided by monitoring equipment 204 or 206 to an external device. For example, the station can be electrically connected to a semiconductor device and transmit the measurement data to the semiconductor device.

[0112] Specifically, when the user issues a measurement command using the semiconductor device while the monitoring device 204 or 206 is waiting in the wafer cassette (S1400) and (S1402), the robot handler moves the monitoring device 204 or 206 from the airlock chamber into the process chamber 200 (S1404).

[0113] Next, the monitoring device 204 or 206 measures process parameters based on the user-set recipe (S1406), and once the measurement is complete, the monitoring device 204 or 206 is transported to the airlock chamber and settled into the wafer cassette (S1408). At this time, the monitoring device 204 or 206 can be automatically charged by the station.

[0114] Next, the monitoring device 204 or 206 transmits the measurement data to the wafer cassette station (S1410), and the station can provide the transmitted measurement data to the semiconductor device.

[0115] In summary, the monitoring device 204 or 206, while securely fixed within the wafer cassette, can transmit measurement data to an external device via the station and can be charged by the station.

[0116] Figure 15 is a block diagram illustrating a first monitoring device according to one embodiment of the present invention. Referring to Figure 15, the first monitoring device 204 may include a control unit (microprocessor) 1500, a communication unit (communication element) 1502, a sensor 1504, a charging unit (charging element) 1506, and a storage unit (memory) 1508.

[0117] The communication unit 1502 is a communication connection path to an external device, a station in the wafer cassette, or a second monitoring device 206. Sensor 1504 measures the process parameters of chuck 202. The charging unit 1506 is wirelessly charged, for example, from the station. The storage unit 1508 can store various types of data, such as measurement recipe information and measurement data.

[0118] The control unit 1500 controls the operation of the first monitoring device 204 in general. For example, the control unit 1500 can transmit measurement recipe commands included in the measurement recipe information to the second monitoring device 206, and can transmit the first measurement data it has measured or the second measurement data transmitted from the second monitoring device 206 to the station or the external device.

[0119] Figure 16 is a block diagram illustrating a second monitoring device according to one embodiment of the present invention. Referring to Figure 16, the second monitoring device 206 may include a control unit (microprocessor) 1600, a communication unit (communication element) 1602, a sensor 1604, a charging unit (charging element) 1606, and a storage unit (memory) 1608.

[0120] The communication unit 1602 is a communication connection path to an external device, a station in the wafer cassette, or the first monitoring device 204. Sensor 1604 measures its own process parameters or the process parameters of the edge ring. The charging unit 1606 is wirelessly charged, for example, from the aforementioned station.

[0121] The storage unit 1608 can store various types of data, such as measurement data. The control unit 1600 provides overall control over the operation of the second monitoring device 206.

[0122] For example, the control unit 1600 can control the sensor 1604 to measure process parameters based on a measurement recipe command received from the first monitoring device 204, and can transmit the measurement data to the first monitoring device 204, the station, or the external device.

[0123] On the other hand, the components of the aforementioned embodiment can be easily understood from a process perspective. That is, each component can be understood as its own process. Furthermore, the process of the aforementioned embodiment can be easily understood from the perspective of the components of the apparatus.

[0124] Furthermore, the aforementioned technical content can be embodied in the form of program instructions that can be executed via various computer means and recorded on a computer-readable medium. The computer-readable medium may include program instructions, data files, data structures, etc., individually or in combination. The program instructions recorded on the medium may be specifically designed and configured for the embodiment, or may be publicly known and usable by those skilled in the computer software art. Examples of computer-readable recording media include magnetic media such as hard disks, floppy disks, and magnetic tapes; optical media such as CD-ROMs and DVDs; magneto-optical media such as floptical disks; and hardware devices specifically configured to store and execute program instructions, such as ROMs, RAMs, and flash memory. Examples of program instructions include not only machine code, such as that produced by a compiler, but also high-level language code that can be executed by a computer using an interpreter or the like. Hardware devices may be configured to operate as one or more software modules to perform the operations of the embodiment, and vice versa.

[0125] The embodiments of the present invention described above are disclosed for illustrative purposes only, and a person skilled in the art with ordinary skill in the invention will know that various modifications, changes, and additions are possible within the spirit and scope of the invention, and such modifications, changes, and additions should be considered to fall within the scope of the claims below. [Explanation of Symbols]

[0126] 200 chambers 202 Electrostatic Chuck 204 Monitoring equipment 206 Second monitoring device (edge ​​ring) 210 Heater 300, 600 Lower cover 302, 602 Top cover 304 PCB board 306 Electronic Components Section 308, 1504, 1604 sensors 310 Guide Cover 312, 608, 708 First filler 314, 710 Second filler 316, 610 First EMI shielding layer 318, 712 First adhesive layer 320 Second EMI shielding layer 322, 714 Second adhesive layer 400 grooves 602a inner part 604 First circuit board 606 First electronic element section 612, 614 Adhesive layer 704 Second circuit board 706 Second electronic component section 900 coils 1000 First EMI shielding layer 1002 Second EMI shielding layer 1010 connector 1500, 1600 Control Unit (Microprocessor) 1502, 1602 Communication section (communication element) 1506, 1606 Charging section (charging element) 1508, 1608 Storage section (memory)

Claims

1. In a first monitoring device used in a monitoring system, Sensors for measuring process parameters, Communications Department and, Includes a control unit, The first monitoring device is arranged on the object to be diagnosed, measures process parameters of the object to be diagnosed using the sensors, and edge rings are arranged on the outside of the object to be diagnosed. The control unit transmits a measurement recipe command requesting measurement of the process parameters of the edge ring to the edge ring or a second monitoring device that measures the process parameters of the edge ring via the communication unit, and the measurement recipe command is a command that controls the edge ring or the second monitoring device to measure the process parameters.

2. The object to be diagnosed is a chuck, and the first monitoring device includes measurement recipe information related to the measurement recipe command even before being placed in the chamber. The first monitoring device according to claim 1, characterized in that it transmits to an external device, after fixing to a cassette, at least one of first measurement data measuring the process parameters of the chuck and second measurement data relating to the measured process parameters transmitted from the edge ring or the second monitoring device.

3. The cassette further includes a station having a structure on which a wafer and the first monitoring device are secured, The first monitoring device according to claim 2, characterized in that the first monitoring device transmits at least one of the first measurement data and the second measurement data to the station, the station provides the transmitted measurement data to an electrically connected semiconductor device, and the first monitoring device is wirelessly charged by the station.

4. The top cover and The bottom cover and A circuit board arranged between the upper cover and the lower cover, Includes a guide cover, and further, The sensor, the communication unit, and the control unit are arranged on the circuit board, and the guide cover is arranged on the side surface of the circuit board. The first monitoring device according to claim 1, characterized in that a first filler is filled between the sensor and the communication unit, between the communication unit and the control unit, between the sensor and the control unit, or between the sensors themselves, a second filler is filled on top of the sensor, the communication unit, or the control unit, and at least one of the sensor, the communication unit, and the control unit is sealed by the first filler and the second filler.

5. The upper cover, the lower cover, and the guide cover are made of the same material as the silicon wafer, silicon cadide, sapphire, and ceramic-based Y, respectively. ２ O ３ YOF, Al ２ O ３ Alternatively, the first monitoring device according to claim 4, characterized in that it is formed of an engineering plastic such as Teflon®, PEEK, or carbon fiber.

6. The first monitoring device according to claim 4, characterized in that the height of the tallest element among the first filler, the second filler, the sensor, the communication unit, and the control unit is the same as the height of the guide cover, and at least one of the sensors is arranged in the outermost edge region.

7. A first EMI shield layer is arranged between the circuit board and the lower cover, A first adhesive layer for bonding the first EMI shield layer and the lower cover, The first filler and the second filler, and the second EMI shield layer arranged on top of the second filler, The present invention further includes a second adhesive layer for bonding the second EMI shield layer and the upper cover, The first monitoring device according to claim 4, characterized in that Acrylic or a silicon-based substance is used as the adhesive for the adhesive layer.

8. The first filler is formed in solid form, and the second filler is formed in liquid form. The first monitoring device according to claim 4, characterized in that a silicon-based material, PEEK, Glass, Ceramic, or Quartz is used as the first filler, and epoxy or a silicon-based material is used as the second filler.

9. In a second monitoring device used in a monitoring system, Sensors for measuring process parameters, Communications Department and, Includes a control unit, The second monitoring device is an edge ring arranged on the outside of the chuck and is communicated with a first monitoring device arranged on the chuck and measuring the process parameters of the chuck. The control unit controls the sensor to measure the process parameters based on a measurement recipe command transmitted from the first monitoring device via the communication unit, and the second monitoring device transmits measurement data relating to the measured process parameters to the first monitoring device or an external device.

10. An upper cover having a first inner space, A lower cover having a second inner space and coupled to the lower part of the upper cover, A first circuit board and a first sensor are sequentially arranged in the first inner space, The present invention further includes a second circuit board and a second sensor arranged sequentially in the second inner space, On the first circuit board, the filler seals the first sensor. The second monitoring device according to claim 9, characterized in that another filler on the second circuit board seals the second sensor.

11. On the first circuit board, in addition to the first sensor, other first electronic elements are arranged, and on the second circuit board, in addition to the second sensor, other second electronic elements are arranged. The filler covers the elements that are relatively lower in height with respect to the height of the tallest element among the first sensor and the first electronic elements. The second monitoring device according to claim 10, characterized in that the other filler covers the element that is relatively lower in height with respect to the height of the tallest element among the second sensor and the second electronic element.

12. The filler or the other filler is formed in solid or liquid form. The second monitoring device according to claim 11, characterized in that the solid is a silicon-based material, PEEK, Glass, Ceramic, or Quartz, and the liquid is epoxy or a silicon-based material.

13. The second monitoring device according to claim 10, characterized in that the first circuit board and the second circuit board are electrically connected to each other via at least one connector, and one of the first circuit board and the second circuit board receives power from the other circuit board.

14. A method for measuring process parameters in a monitoring system that includes a first monitoring device arranged on a body to be diagnosed and a second monitoring device arranged outside the body to be diagnosed and functioning as an edge ring, The steps include arranging the first monitoring device on the body to be diagnosed, The first monitoring device transmits a measurement recipe command to the second monitoring device, The second monitoring device independently measures process parameters based on the transmitted measurement recipe command, The second monitoring device transmits second measurement data relating to the measured process parameters to the first monitoring device, A method for measuring process parameters in a monitoring system, characterized by comprising the step of transmitting the second measurement data transmitted by the first monitoring device to an external device.

15. The object to be diagnosed is a chuck, the first monitoring device is replaced after each process, and the second monitoring device is maintained in the chamber over several processes. The first monitoring device measures the process parameters of the chuck, A method for measuring process parameters in a monitoring system according to claim 14, further comprising the step of transmitting first measurement data relating to the measured process parameters from the first monitoring device to the external device.

16. The step of the first monitoring device transmitting the transmitted second measurement data to an external device is: After the first monitoring device receives the second measurement data, the first monitoring device is transported to a cassette. The first monitoring device transmits the second measurement data to the cassette station, A method for measuring process parameters in a monitoring system according to claim 14, comprising the step of the station transmitting the transmitted second measurement data to an electrically connected semiconductor device.

17. The first monitoring device is placed inside the chamber and positioned on the body to be diagnosed. The method for measuring process parameters in a monitoring system according to claim 14, characterized in that the first monitoring device receives information regarding the measurement recipe command from the cassette station before being placed into the chamber, and transmits the second measurement data to the station after being transported outside the chamber.

18. The process involves an edge ring including at least one sensor and a communication unit, which independently measures process parameters using the sensor, The edge ring includes the step of transmitting measurement data relating to the measured process parameters to an external device, A method for measuring process parameters in a monitoring system, characterized in that the measurement data is transmitted to the external device after the edge ring has been moved outside the chamber.

19. The steps include: establishing a communication link between the station and monitoring equipment within the cassette; The station receives measurement data from a monitoring device that measures the process parameters of the elements in the chamber. The station includes the step of transmitting the received measurement data to an external device, A method for measuring process parameters in a monitoring system, characterized in that the station receives the measurement data from the monitoring device while the monitoring device is securely installed in the cassette.

20. The step further includes the station wirelessly charging the monitoring device, The method for measuring process parameters in a monitoring system according to claim 19, characterized in that the station transmits the received measurement data to an electrically connected semiconductor device, and a wafer is also stored in the cassette.

21. Multiple slits, Including the station, A cassette used in a monitoring system, characterized in that a monitoring device is fixed onto the slit, the monitoring device measures process parameters of elements in a chamber, the station receives measurement data relating to the measured process parameters from the fixed monitoring device, and transmits the received measurement data to an external device.

22. The wafer is also fixed onto the slit, and the station wirelessly charges the monitoring equipment. The cassette used in the monitoring system according to claim 21, characterized in that the station transmits the measurement data to an electrically connected semiconductor device.

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