Display panel, method for manufacturing the same, and display device.

Abstract

A display panel comprising a base, a display structure layer located in a display area, a plurality of data lead lines located in a signal access area, a plurality of contact pads, and an inorganic composite insulating layer. At least one contact pad includes a plurality of contact pad metal layers electrically connected to each other, and the plurality of contact pad metal layers are electrically connected to one of the plurality of data lead lines. The inorganic composite insulating layer is located on the side of at least one of the plurality of contact pad metal layers closer to the base. The orthographic projections of the inorganic composite insulating layer and the plurality of contact pads on the base do not overlap, or the orthographic projections of the inorganic composite insulating layer and at least one contact pad on the base overlap at least partially.

Description

Technical Field

[0001] This application claims the priority of a Chinese patent application filed with the China National Intellectual Property Administration on April 27, 2023, with an application number of 202310476758.1 and an invention title of "Display Panel and Its Manufacturing Method, Display Device", and the content thereof should be understood to be incorporated into this application by reference.

[0002] This text relates to the display technology field, but is not limited thereto, and particularly relates to a display panel and its manufacturing method, and a display device.

Background Art

[0003] An organic light-emitting diode (OLED) is an active light-emitting display device, which has advantages such as self-luminous, wide viewing angle, high contrast ratio, low power consumption, and extremely high response speed. With the continuous development of display technology, a display using an OLED as a light-emitting device and performing signal control by a thin film transistor (TFT) has become the main product in the current display field.

Summary of the Invention

[0004] The following is an overview of the main topics detailed in this text. This overview is not intended to limit the scope of protection of the claims.

[0005] Embodiments of the present disclosure provide a display panel and its manufacturing method, and a display device.

[0006] In one embodiment, this embodiment provides a display panel comprising a base, a display structure layer, a plurality of data leads, a plurality of contact pads, and an inorganic composite insulating layer. The base includes a display area and a signal access area located on at least one side of the display area. The display structure layer is located at the base of the display area and includes a plurality of subpixels and a plurality of data lines, the plurality of subpixels being electrically connected to the plurality of data lines. The plurality of data lines are configured to provide data signals to the plurality of subpixels. The plurality of data leads are located in the signal access area and are connected to the plurality of data lines. The plurality of contact pads are located in the signal access area and include a plurality of contact pad metal layers, at least one of which is electrically connected to the others. The plurality of contact pad metal layers are electrically connected to one of the plurality of data leads. The inorganic composite insulating layer is located in the signal access area and is located on the side of at least one of the plurality of contact pad metal layers that is closer to the base. The orthographic projections of the inorganic composite insulating layer and the plurality of contact pads on the base do not overlap, or the orthographic projections of the inorganic composite insulating layer and at least one of the contact pads on the base overlap at least partially.

[0007] In some exemplary embodiments, the inorganic composite insulating layer is located on the side of the plurality of contact pad metal layers that is closer to the base.

[0008] In some exemplary embodiments, the orthographic projection of the inorganic composite insulating layer on the base covers the orthographic projection of the overlapping region of the plurality of contact pad metal layers on the base.

[0009] In some exemplary embodiments, at least a portion of the inorganic composite insulating layer is located in the space between adjacent contact pads.

[0010] In some exemplary embodiments, the at least one contact pad further includes an inactive contact pad metal layer, and the inorganic composite insulating layer is located between the plurality of contact pad metal layers of the at least one contact pad and the inactive contact pad metal layer.

[0011] In some exemplary embodiments, the orthographic projection of the inorganic composite insulating layer on the base covers the orthographic projection of the ineffective contact pad metal layer on the base.

[0012] In some exemplary embodiments, the at least one contact pad includes a first contact pad metal layer that contacts the surface of the inorganic composite insulating layer away from the base, and the first contact pad metal layer is electrically connected to a single data lead.

[0013] In some exemplary embodiments, the first contact pad metal layer and the single data lead wire are integrated and connected to each other.

[0014] In some exemplary embodiments, the display panel further comprises a plurality of access connection lines located in the signal access area. The first contact pad metal layer is electrically connected to the data lead line via one access connection line, and the first contact pad metal layer and the one access connection line are connected to each other in an integrated structure.

[0015] In some exemplary embodiments, the connection point between the access connection line and the data lead line is located on the side of the plurality of contact pads closest to the display area.

[0016] In some exemplary embodiments, the display panel further comprises a plurality of connection electrodes located in the signal access area. The access connection line is electrically connected to the data lead line via the connection electrodes, the access connection line is located on the side of the data lead line away from the base, and the connection electrodes are located on the side of the access connection line away from the base.

[0017] In some exemplary embodiments, at least one of the plurality of subpixels includes a pixel circuit, the pixel circuit includes at least one first transistor and at least one second transistor, the first and second transistors being of different transistor types. The first transistor includes a first active layer and a first gate electrode. The second transistor includes a second active layer and a second gate electrode, the first active layer and first gate electrode of the first transistor are located on the side of the second active layer of the second transistor closer to the base, and the second gate electrode is located on the side of the second active layer further away from the base. A third gate insulating layer is provided between the second active layer and the second gate electrode. The inorganic composite insulating layer includes at least a fifth inorganic insulating layer provided on the same layer as the third gate insulating layer.

[0018] In some exemplary embodiments, the pixel circuit further includes at least one capacitor, the capacitor comprising a first plate and a second plate, the second plate located on the side of the first plate away from the base and the second plate located on the side of the second active layer of the second transistor closer to the base. A first interlayer insulating layer is provided between the second plate and the second active layer of the second transistor, and the inorganic composite insulating layer includes a fifth inorganic insulating layer and a third inorganic insulating layer provided on the same layer as the first interlayer insulating layer.

[0019] In some exemplary embodiments, a first buffer layer is further provided between the second electrode plate and the second active layer of the second transistor, and the first interlayer insulating layer is located on the side of the first buffer layer closer to the base. The inorganic composite insulating layer includes the third inorganic insulating layer, the fifth inorganic insulating layer, and a fourth inorganic insulating layer provided on the same layer as the first buffer layer.

[0020] In some exemplary embodiments, the at least one contact pad includes a first contact pad metal layer that contacts the surface of the inorganic composite insulating layer away from the base, and the first contact pad metal layer and the second gate electrode of the second transistor are of the same layer structure.

[0021] In some exemplary embodiments, the at least one contact pad further includes a second contact pad metal layer located on the side of the first contact pad metal layer away from the base. The display panel further comprises a sixth inorganic insulating layer, the sixth inorganic insulating layer located in the signal access area and on the side of the fifth inorganic insulating layer away from the base. The orthographic projections of the sixth inorganic insulating layer and the at least one contact pad on the base do not overlap, or the sixth inorganic insulating layer covers the edge of the first contact pad metal layer of the at least one contact pad, and the surface of the first contact pad metal layer exposed by the sixth inorganic insulating layer is in contact with the second contact pad metal layer.

[0022] In some exemplary embodiments, a portion of the sixth inorganic insulating layer is placed in the space between adjacent contact pads.

[0023] In some exemplary embodiments, the sixth inorganic insulating layer has an annular structure that covers the edge of the first contact pad metal layer.

[0024] In some exemplary embodiments, the second transistor further includes a second source electrode and a second drain electrode, and a second interlayer insulating layer is provided between the second gate electrode of the second transistor and the second source electrode and the second drain electrode. The sixth inorganic insulating layer and the second interlayer insulating layer are located on the same layer. The second contact pad metal layer and the second source electrode and the second drain electrode of the second transistor have the same layer structure.

[0025] In some exemplary embodiments, the at least one contact pad includes a first contact pad metal layer located on the side of the inorganic composite insulating layer closer to the base, and a second contact pad metal layer located on the side of the inorganic composite insulating layer away from the base, wherein the second contact pad metal layer is connected to the first contact pad metal layer. The inorganic composite insulating layer covers the edge of the first contact pad metal layer.

[0026] In some exemplary embodiments, the inorganic composite insulating layer has an annular structure covering the edge of the first contact pad metal layer.

[0027] In some exemplary embodiments, the at least one sub-pixel further includes a light-emitting element, and the pixel circuit is electrically connected to the light-emitting element via a first relay electrode. The at least one contact pad includes a first contact pad metal layer, a second contact pad metal layer, and a third contact pad metal layer that are sequentially arranged along a direction away from the base. The third contact pad metal layer and the first relay electrode have the same layer structure.

[0028] In some exemplary embodiments, the display panel further includes a touch structure layer located on a side away from the base of the display structure layer, and the touch structure layer includes at least one touch conductive layer. The at least one contact pad further includes a fourth contact pad metal layer located on a side away from the base of the third contact pad metal layer, and the fourth contact pad metal layer and one touch conductive layer in the touch structure layer have the same layer structure.

[0029] In some exemplary embodiments, a side of the inorganic composite insulating layer contacts the second contact pad metal layer or the third contact pad metal layer.

[0030] In some exemplary embodiments, the display panel further includes a first organic insulating layer located in the signal access region and on a side away from the base of the inorganic composite insulating layer, and a side of the inorganic composite insulating layer contacts the first organic insulating layer.

[0031] In another aspect, the present embodiment provides a display device including the above display panel.

[0032] In other embodiments, this embodiment provides a method for manufacturing a display panel, comprising: providing a base, the base including a display area and a signal access area located on at least one side of the display area; forming a display structure layer in the display area; and forming a plurality of data leads, a plurality of contact pads, and an inorganic composite insulating layer in the signal access area. The display structure layer includes a plurality of subpixels and a plurality of data lines, the plurality of subpixels being electrically connected to the plurality of data lines. The plurality of data lines are configured to provide data signals to the plurality of subpixels; the plurality of data leads are connected to the plurality of data lines; at least one of the plurality of contact pads includes a plurality of contact pad metal layers that are electrically connected to each other; the plurality of contact pad metal layers are electrically connected to one of the plurality of data leads. The inorganic composite insulating layer is located on the side of at least one of the plurality of contact pad metal layers closer to the base, and the orthographic projections of the inorganic composite insulating layer and the plurality of contact pads on the base do not overlap, or the orthographic projections of the inorganic composite insulating layer and the at least one contact pad on the base overlap at least partially.

[0033] In other embodiments, this embodiment provides a display panel comprising a base, a display structure layer, a plurality of data leads, a plurality of contact pads, an inorganic composite insulating layer, and a first organic insulating layer. The base includes a display area and a signal access area located on at least one side of the display area. The display structure layer is located at the base of the display area and includes a plurality of subpixels and a plurality of data lines, the plurality of subpixels being electrically connected to the plurality of data lines, and the plurality of data lines being configured to provide data signals to the plurality of subpixels. The plurality of data leads are located in the signal access area and are connected to the plurality of data lines. The plurality of contact pads are located in the signal access area and include a plurality of contact pad metal layers, at least one of the plurality of contact pads being electrically connected to each other, and the plurality of contact pad metal layers being electrically connected to one of the plurality of data leads. The inorganic composite insulating layer is located in the signal access area and is located on the side of at least one of the plurality of contact pad metal layers that is closer to the base. The first organic insulating layer is located in the signal access region, and the first organic insulating layer is located on the side away from the base of the inorganic composite insulating layer and at least one of the plurality of contact pad metal layers. The side of the inorganic composite insulating layer is in contact with the first organic insulating layer or one of the plurality of contact pad metal layers.

[0034] In some exemplary embodiments, the inorganic composite insulating layer is located on the side of the plurality of contact pad metal layers closer to the base, and the orthographic projection of the inorganic composite insulating layer on the base covers the orthographic projection of the overlapping region of the plurality of contact pad metal layers on the base.

[0035] In some exemplary embodiments, the at least one contact pad further includes an inactive contact pad metal layer, and the inorganic composite insulating layer is located between the plurality of contact pad metal layers of the at least one contact pad and the inactive contact pad metal layer.

[0036] After reading and understanding the drawings and detailed explanations, one can then understand other aspects. The drawings are provided to give further understanding of the proposed technical invention of this disclosure, and are part of the specification, and together with the embodiments of this disclosure, they are intended to interpret the proposed technical invention of this disclosure and not to limit the proposed technical invention of this disclosure. The shapes and sizes of one or more parts in the drawings do not reflect actual proportions and are for illustrative purposes only. [Brief explanation of the drawing]

[0037] [Figure 1A] This is a schematic diagram of a display panel according to at least one embodiment of the present disclosure. [Figure 1B] This is another schematic diagram of a display panel according to at least one embodiment of the present disclosure. [Figure 2] This is a schematic local cross-sectional view of the display area of ​​a display panel according to at least one embodiment of the present disclosure. [Figure 3] This is a local schematic diagram of a signal access region according to at least one embodiment of the present disclosure. [Figure 4] This is a schematic diagram of a local cross-section along the P-P' direction in Figure 3. [Figure 5] This is a localized enlarged view of region S1 in Figure 3. [Figure 6A] Figure 5 is a schematic diagram of the first gate metal layer. [Figure 6B] Figure 5 is a schematic diagram of the third gate metal layer. [Figure 7] This is a schematic diagram of a local cross-section along the Q-Q' direction in Figure 5. [Figure 8] This is a partially enlarged schematic diagram of region S2 in Figure 3. [Figure 9] This is another schematic diagram of a local cross-section along the P-P' direction in Figure 3. [Figure 10] This is another schematic diagram of a localized enlargement of region S2 in Figure 3. [Figure 11] This is another schematic diagram of a local cross-section along the P-P' direction in Figure 3. [Figure 12]This is another schematic diagram of a local cross-section along the P-P' direction in Figure 3. [Figure 13] This is another schematic diagram of a localized enlargement of region S1 in Figure 3. [Figure 14A] Figure 13 is a schematic diagram of the third gate metal layer. [Figure 14B] Figure 13 is a schematic diagram of the first gate metal layer. [Figure 15] This is a schematic diagram of a local cross-section along the R-R' direction in Figure 13. [Figure 16] This is another schematic diagram of a local cross-section along the P-P' direction in Figure 3. [Figure 17] This is another schematic diagram of a local cross-section along the P-P' direction in Figure 3. [Figure 18] This is another local schematic diagram of a signal access area according to at least one embodiment of the present disclosure. [Figure 19] Figure 18 is a schematic diagram of the first gate metal layer. [Figure 20] This is a schematic diagram of a local cross-section along the V-V' direction in Figure 18. [Figure 21] This is a localized enlarged view of region S3 in Figure 18. [Figure 22] This is another schematic diagram of a local cross-section along the V-V' direction in Figure 18. [Figure 23] This is a schematic diagram of a display device according to at least one embodiment of the present disclosure. [Modes for carrying out the invention]

[0038] The embodiments of this disclosure will be described in detail below with reference to the drawings. The embodiments can be carried out in many different forms. The methods and content can be converted to other forms without departing from the gist and scope of this disclosure, so as can be easily understood by those skilled in the art. Accordingly, this disclosure should not be construed as being limited only to the descriptions of the embodiments below. Where there is no conflict, the embodiments and features of the embodiments of this disclosure can be combined with each other.

[0039] In the drawings, for clarity, the size, layer thickness, or area of ​​one or more components may be shown in an enlarged manner. Therefore, one embodiment of the present disclosure is not limited to such size, and the shape and size of one or more components in the drawings do not reflect actual proportions. Furthermore, the drawings schematically represent ideal examples, and one embodiment of the present disclosure is not limited to the shapes or numerical values ​​shown in the drawings.

[0040] In this specification, ordinal numbers such as “first,” “second,” and “third” are used to avoid confusion of constituent elements and do not limit them in terms of quantity. The term “plural” in this disclosure refers to two or more quantities.

[0041] In this specification, for convenience, the positions of components are described with reference to the drawings using terms indicating orientation or positional relationships such as "center," "top," "bottom," "front," "back," "vertical," "horizontal," "top," "bottom," "inside," and "outside." This is for the purpose of describing and simplifying this specification, and is not intended to indicate or suggest that the described apparatus or element has a specific orientation or must be configured and operated in a specific orientation. Therefore, it is not intended to limit this disclosure. The positional relationships of components may be appropriately changed depending on the orientation of the component being described. Therefore, the terms used may be appropriately changed in some cases, not limited to those described in the specification.

[0042] In this specification, unless explicitly stated or limited, the terms “attach,” “connect,” and “connect” should be understood broadly. For example, this could be a fixed connection, a removable connection, or an integrated connection; a mechanical connection, or a connection; a direct connection, an indirect connection via a linker, or internal communication between two elements. Those skilled in the art will understand the meaning of these terms in this disclosure depending on the specific circumstances.

[0043] In this specification, “electrical connection” includes cases where components are connected via an element having an electrical function. The “element having an electrical function” is not particularly limited and only needs to be capable of transmitting electrical signals between the connected components. Examples of “elements having an electrical function” include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and various other elements with different functions.

[0044] In this specification, a transistor refers to an element that includes at least three terminals: a gate electrode, a drain electrode, and a source electrode. A transistor has a channel region between the drain electrode (drain electrode terminal, drain region, or drain electrode) and the source electrode (source electrode terminal, source region, or source electrode), and current can flow through the drain electrode, the channel region, and the source electrode. In this specification, the channel region refers to the region through which current primarily flows.

[0045] In this specification, the first electrode may be the drain electrode and the second electrode may be the source electrode, or the first electrode may be the source electrode and the second electrode may be the drain electrode. When using transistors with opposite polarity, or when the direction of current changes during operation in the circuit, the functions of the "source electrode" and the "drain electrode" may be converted to each other. Therefore, in this specification, the "source electrode" and the "drain electrode" may be converted to each other. The gate electrode may also be referred to as the control electrode.

[0046] In this specification, "parallel" refers to a state in which the angle formed by two straight lines is between -10° and 10°, and therefore also includes a state in which the angle is between -5° and 5°. Furthermore, "perpendicular" refers to a state in which the angle formed by two straight lines is between 80° and 100°, and therefore also includes a state in which the angle is between 85° and 95°.

[0047] In this specification, circles, ellipses, triangles, rectangles, trapezoids, pentagons, or hexagons are not strictly defined and may be approximate circles, ellipses, triangles, rectangles, trapezoids, pentagons, or hexagons, and small deformations due to tolerances may exist, such as chamfers, arcs, and other deformations.

[0048] In this disclosure, "approximately" and "nearly" do not strictly define boundaries and allow for tolerances within the process and measurement error range. In this disclosure, "nearly the same" means that the difference in numerical values ​​is within 10%. In this disclosure, "symmetrical" does not strictly define boundaries and allows for near symmetry within the process and measurement error range.

[0049] In this disclosure, "A extends along direction B" means that A includes a main body and secondary parts connected to the main body, the main body is a line, line segment or elongated object, the main body extends along direction B, and the length of the main body extending along direction B is greater than the length of the secondary parts extending in other directions. In this disclosure, "A extends along direction B" always means "the main body of A extends along direction B." In this disclosure, "A and B are an integrated structure" means that A and B are connected to each other and integrally molded.

[0050] Typically, after the manufacturing process of a display panel, it is necessary to connect the display panel to an external circuit (e.g., a control chip), thereby controlling or driving the display panel during the display process. For example, the external circuit may include a flexible printed circuit board, on which a control chip or drive chip is installed. Contact pads are installed on the display panel and connected to the circuit of the flexible printed circuit board by a bonding process. If there is a step between the contact pads of the display panel and the surrounding area, for example, if the height of the inorganic film layer in the surrounding area is high, the pressure applied to the display panel by the pressure head of the pressure supply device during the bonding process will be unevenly distributed. Due to the uneven force, the display panel may break. For example, the inorganic film layer in the gap between the contact pads may break due to tensile stress caused by the uneven force, damaging the display panel.

[0051] For example, in the manufacturing process of a display panel, the film layers (e.g., insulating layers) included in the display panel may be formed by physical or chemical vapor deposition (e.g., plasma-enhanced chemical vapor deposition, PECVD), and the crystals in these film layers usually have microscopic structural defects. In actual processes, if there is a step between the contact pad and its surrounding area, the force acting on the binding area during the binding process becomes uneven, causing stress concentration. For example, stress concentrates in the area where the tip of the contact pad (e.g., a corner) is located, and this stress concentration worsens crystal defects in the film layer, making the film layer more prone to fracture.

[0052] This embodiment provides a display panel comprising a base, a display structure layer, multiple data leads, multiple contact pads, and an inorganic composite insulating layer. The base includes a display area and a signal access area located on at least one side of the display area. The display structure layer is located at the base of the display area and includes multiple subpixels and multiple data lines, the multiple subpixels being electrically connected to the multiple data lines, and the multiple data lines being configured to provide data signals to the multiple subpixels. Multiple data leads are located in the signal access area and are connected to the multiple data lines. Multiple contact pads are located in the signal access area and include multiple contact pad metal layers, at least one of which is electrically connected to the others. Multiple contact pad metal layers are electrically connected to one of the multiple data leads. The inorganic composite insulating layer is located in the signal access area and is located on the side of at least one of the multiple contact pad metal layers that is closer to the base. The orthographic projections of the inorganic composite insulating layer and the multiple contact pads on the base do not overlap, or the orthographic projections of the inorganic composite insulating layer and at least one contact pad on the base overlap at least partially.

[0053] In the display panel according to this embodiment, the step difference between the contact pad and the surrounding film layer can be reduced by installing or removing an inorganic composite insulating layer, thereby improving the film layer cracking situation during the binding process and increasing the stability of the binding process and the yield rate of the display panel.

[0054] In some exemplary embodiments, the inorganic composite insulating layer may be located closer to the base of the multiple contact pad metal layers. In some examples, the orthographic projection of the inorganic composite insulating layer at the base may cover the orthographic projection at the base of the overlapping region of the multiple contact pad metal layers. In this example, the inorganic composite insulating layer can be used to increase the height of the contact pad metal layers, thereby reducing the step difference between the contact pads and the surrounding film layers, improving the film layer cracking situation in the binding process, and increasing the stability of the binding process and the yield rate of display panels.

[0055] In some exemplary embodiments, at least one contact pad may further include an inactive contact pad metal layer. An inorganic composite insulating layer may be located between multiple contact pad metal layers and the inactive contact pad metal layer of the contact pad. In this example, the inactive contact pad metal layer can be used to increase the height of the contact pad metal layer, reduce the step difference between the contact pad and the surrounding film layer, improve the film layer cracking situation in the binding process, and increase the stability of the binding process and the yield rate of display panels.

[0056] The method of this embodiment will be explained below with examples.

[0057] Figure 1A is a schematic diagram of a display panel according to at least one embodiment of the present disclosure. Figure 1B is another schematic diagram of a display panel according to at least one embodiment of the present disclosure. Both Figures 1A and 1B show schematic plan views of the display panel before the folding process is carried out.

[0058] In some examples, as shown in Figures 1A and 1B, the display panel may include a display area AA and a peripheral area BB surrounding the display area AA. For example, the peripheral area BB may include a first frame area B1 located on one side of the display area AA, and frame areas located on the other side of the display area AA (for example, including a second frame area B2, a third frame area B3, and a fourth frame area B4). The first frame area B1 may be, for example, the lower frame of the display panel, the second frame area B2 may be, for example, the upper frame of the display panel, the third frame area B3 may be, for example, the left frame of the display panel, and the fourth frame area B4 may be, for example, the right frame of the display panel.

[0059] In some examples, as shown in Figures 1A and 1B, the display area AA may be a flat area and may include multiple subpixels PX that constitute a pixel array, and the multiple subpixels PX may be configured to display a moving image or a still image. The display area AA may be called the Active Area. In some examples, the display area AA may be rectangular, however, this embodiment is not limited to that. For example, the display area AA may be circular or elliptical or other shapes. In some examples, the display panel may be a flexible panel, and therefore the display panel may be deformable, such as being able to curl, bend, fold, or roll up.

[0060] In some examples, as shown in Figures 1A and 1B, the display area AA may include at least a plurality of subpixels PX, a plurality of gate lines GL, and a plurality of data lines DL. The plurality of gate lines GL may extend along a first direction X, and the plurality of data lines DL may extend along a second direction Y. The orthographic projections of the plurality of gate lines GL and the plurality of data lines DL on the base may intersect to form a plurality of subpixel regions, each of which may contain one subpixel PX. The plurality of data lines DL and the plurality of subpixels PX may be electrically connected, and the plurality of data lines DL may be configured to provide data signals to the plurality of subpixels PX. The plurality of gate lines GL may be electrically connected to the plurality of subpixels PX, and the plurality of gate lines GL may be configured to provide gate electrode control signals to the plurality of subpixels PX. In some examples, the gate electrode control signal may include a scan signal and an illumination control signal, or may include a scan signal, a reset control signal, and an illumination control signal.

[0061] In some examples, as shown in Figures 1A and 1B, the first direction X may be the direction of extension of the gate lines GL in the display area AA (e.g., the row direction), and the second direction Y may be the direction of extension of the data lines DL in the display area AA (e.g., the column direction). The first direction X and the second direction Y may intersect each other, or they may be perpendicular to each other, for example.

[0062] In some examples, one pixel unit of display area AA may contain three subpixels, where the three subpixels are a red subpixel, a green subpixel, and a blue subpixel, respectively. However, this embodiment is not limited to this. In some examples, one pixel unit may contain four subpixels, where the four subpixels are a red subpixel, a green subpixel, a blue subpixel, and a white subpixel, respectively.

[0063] In some examples, the shape of the subpixels may be rectangular, rhombus, pentagonal, or hexagonal. If a pixel unit contains three subpixels, the three subpixels may be arranged in a horizontal parallel, vertical parallel, or U-shape. If a pixel unit contains four subpixels, the four subpixels may be arranged in a horizontal parallel, vertical parallel, or square shape, but this embodiment is not limited to these arrangements.

[0064] In some examples, a subpixel may include a pixel circuit and a light-emitting element electrically connected to the pixel circuit. The pixel circuit may include multiple transistors and at least one capacitor. For example, the pixel circuit may have a 3T1C, 4T1C, 5T1C, 5T2C, 6T1C, 7T1C, or 8T1C structure. In the above circuit structures, T refers to a thin-film transistor, C refers to a capacitor, the number before T represents the number of thin-film transistors in the circuit, and the number before C represents the number of capacitors in the circuit. In some examples, the multiple transistors in the pixel circuit may include P-type transistors and N-type transistors, but this embodiment is not limited to them.

[0065] In some examples, multiple transistors in a pixel circuit may employ low-temperature polysilicon film transistors and oxide film transistors. The active layer of the low-temperature polysilicon film transistor uses low-temperature polysilicon (LTPS), while the active layer of the oxide film transistor uses an oxide semiconductor. Low-temperature polysilicon film transistors have advantages such as high mobility and fast charging, while oxide film transistors have advantages such as low leakage current. By integrating low-temperature polysilicon film transistors and oxide film transistors into a single display panel, i.e., an LTPS+Oxide (abbreviated as LTPO) display panel, the advantages of both can be utilized to achieve low-frequency driving, reduce power consumption, and improve display quality.

[0066] In some examples, the light-emitting element may be any one of the following: a light-emitting diode (LED), an organic light-emitting diode (OLED), a quantum dot light-emitting diode (QLED), or a micro-LED (including mini-LED or micro-LED). For example, the light-emitting element may be an OLED, which can emit red, green, blue, or white light under the drive of the corresponding pixel circuit. The emission color of the light-emitting element can be determined according to the requirements. In some examples, the light-emitting element may include an anode, a cathode, and an organic light-emitting layer located between the anode and the cathode. The anode of the light-emitting element may be electrically connected to the corresponding pixel circuit, however, this is not limited in this embodiment.

[0067] In some examples, a touch structure may be integrated into the display panel. The display panel may include an organic light-emitting diode (OLED) display substrate, or a plasma display (PDP) display substrate, or an electrophoretic display (EPD) display substrate. For example, the display panel may comprise an OLED display substrate and a touch structure. The touch structure may be installed in the encapsulation layer of the display substrate to form a structure in which the touch structure is on a thin film encapsulation (abbreviated as Touch on Thin Film Encapsulation, or Touch on TFE). The display structure and touch structure are integrated, offering advantages such as lightweight design and foldability, and can satisfy product demands such as flexible folding and narrow frames.

[0068] In some examples, Touch on TFE structures primarily include Flexible Multi-Layer On Cell (FMLOC) and Flexible Single-Layer On Cell (FSLOC) structures. FMLOC structures are based on the principle of mutual capacitance detection, and generally consist of two layers of metal forming a drive (Tx) electrode and a measuring (Rx) electrode. The integrated circuit (IC) then detects the mutual capacitance between the drive and measuring electrodes to achieve touch operation. FSLOC structures are based on the principle of self-capacitance (or voltage) detection, and generally consist of a single layer of metal forming the touch electrode. The integrated circuit then detects the self-capacitance (or voltage) of the touch electrode to achieve touch operation.

[0069] Figure 2 is a schematic local cross-sectional view of a display area of ​​a display panel according to at least one embodiment of the present disclosure. Figure 2 illustrates the structure of one subpixel of the display area. In this example, the transistors in the pixel circuit may be of different types and may include, for example, low-temperature polysilicon film transistors and oxide film transistors. A touch structure such as a mutual capacitance type touch structure can be integrated into the display panel of this example to form an FMLOC structure.

[0070] In some examples, as shown in Figure 2, the display area of ​​the display panel may include a base 10 and, sequentially, a circuit structure layer 12, a light-emitting structure layer 13, a sealing structure layer 14, and a touch structure layer 15, all mounted on the base. The display structure layer may include at least the circuit structure layer 12 and the light-emitting structure layer 13. The circuit structure layer 12 may include pixel circuits for at least a plurality of subpixels, and each subpixel's pixel circuit may include a plurality of transistors and at least one capacitor. The light-emitting structure layer 13 may include light-emitting elements for at least a plurality of subpixels.

[0071] In some examples, Figure 2 illustrates that each subpixel includes one first transistor 21, one second transistor 22, and one capacitor 23. The first transistor 21 and the second transistor 22 may be of different types. The first transistor 21 may be a low-temperature polysilicon film transistor, and the second transistor 22 may be an oxide film transistor.

[0072] In some examples, the display area circuit structure layer 12 may include a first semiconductor layer, a first gate metal layer, a second gate metal layer, a second semiconductor layer, a third gate metal layer, a first source-drain metal layer, and a second source-drain metal layer, all of which are placed on the base 10. In this example, the multiple display area metal layers of the display structure layer may include a first gate metal layer, a second gate metal layer, a third gate metal layer, a first source-drain metal layer, and a second source-drain metal layer. A first gate insulating (GI) layer 101 may be placed between the first semiconductor layer and the first gate metal layer, and a second gate insulating layer 102 may be placed between the first gate metal layer and the second gate metal layer. A first interlayer insulating (ILD) layer 103 and a first buffer layer 104 may be placed between the second gate metal layer and the second semiconductor layer, with the first buffer layer 104 located on the side of the first interlayer insulating layer 103 away from the base 10. A third gate insulating layer 105 may be placed between the second semiconductor layer and the third gate metal layer. A second interlayer insulating layer 106 may be installed between the third gate metal layer and the first source-drain metal layer. A passivation (PVX) layer 107 and a first flat (PLN) layer 108 may be installed between the first source-drain metal layer and the second source-drain metal layer, and the first flat layer 108 may be located on the side of the passivation layer 107 away from the base 10. A second flat layer 109 may be installed on the side of the second source-drain metal layer away from the base 10. The first gate insulating layer 101, the second gate insulating layer 102, the first interlayer insulating layer 103, the first buffer layer 104, the third gate insulating layer 105, the second interlayer insulating layer 106, and the passivation layer 107 may be inorganic insulating layers, and the first flat layer 108 and the second flat layer 109 may be organic insulating layers. However, this embodiment is not limited to these materials. In other examples, a second buffer layer may be further installed on the side of the first semiconductor layer closer to the base. The second buffer layer can prevent harmful substances from entering the display panel from the base and can also increase the adhesion of the film layer on the display panel to the base.In other examples, a bottom shielding metal (BSM) layer may be further installed on the side of the second buffer layer closer to the base, and the bottom shielding metal layer may be configured so that at least a portion of it covers the active layer of the transistor in the pixel circuit in order to avoid the influence of external light on the performance of the transistor. In other examples, a passivation layer may be omitted between the first source-drain metal layer and the second source-drain metal layer, and only the first flat layer may be installed between the first source-drain metal layer and the second source-drain metal layer. In other examples, the first buffer layer may be omitted between the second gate metal layer and the second semiconductor layer, and only the first interlayer insulating layer 103 may be installed.

[0073] In some examples, as shown in Figure 2, the first semiconductor layer of the display area may include at least the first active layer 210 of the first transistor 21. The first active layer 210 of the first transistor 21 may include a first area 2101, a second area 2102, and a channel region 2100 located between the first area 2101 and the second area 2102. The first gate metal layer may include at least the first gate electrode 213 of the first transistor 21 and the first plate 231 of the capacitor 23. The orthographic projection of the first gate electrode 213 of the first transistor 21 on the base 10 may cover the orthographic projection of the channel region 2100 of the first active layer 210 on the base 10. The second gate metal layer may include at least the second plate 232 of the capacitor 23 and the third gate electrode 224 of the second transistor 22. The orthographic projections of the second plate 232 and the first plate 231 of the capacitor 23 on the base 10 may overlap at least partially, for example, they may overlap completely. The second semiconductor layer may include at least the second active layer 220 of the second transistor 22. The third gate metal layer may include at least the second gate electrode 223 of the second transistor 22. The orthographic projection of the second gate electrode 223 of the second transistor 22 on the base 10 and the orthographic projection of the second active layer 220 on the base 10 may partially overlap. The orthographic projection of the third gate electrode 224 of the second transistor 22 on the base 10 and the orthographic projection of the second active layer 220 on the base 10 may partially overlap. The third gate electrode 224 may be the bottom gate of the second transistor 22, and the second gate electrode 223 may be the top gate of the second transistor 22.

[0074] In some examples, as shown in Figure 2, the first source-drain metal layer may include at least the first source electrode 211 and first drain electrode 212 of the first transistor 21, and the second source electrode 221 and second drain electrode 222 of the second transistor 22. The second interlayer insulating layer 106 may have a plurality of pixel vias (e.g., including a first pixel via, a second pixel via, a third pixel via, and a fourth pixel via) opened in the display area. The second interlayer insulating layer 106, the third gate insulating layer 105, the first buffer layer 104, the first interlayer insulating layer 103, the second gate insulating layer 102, and the first gate insulating layer 101 within the first pixel via may be removed to expose the surface of at least a portion of the first area 2101 of the first active layer 210. The second interlayer insulating layer 106, the third gate insulating layer 105, the first buffer layer 104, the first interlayer insulating layer 103, the second gate insulating layer 102, and the first gate insulating layer 101 within the second pixel via may be removed to expose at least a portion of the surface of the second area 2102 of the first active layer 210. The second interlayer insulating layer 106 and the third gate insulating layer 105 within the third and fourth pixel vias may be removed to expose at least a portion of the surface of both ends of the second active layer 220. The first source electrode 211 of the first transistor 21 may be electrically connected to the first area 2101 of the first active layer 210 via the first pixel via, and the first drain electrode 212 may be electrically connected to the second area 2102 of the first active layer 210 via the second pixel via. The second source electrode 221 of the second transistor 22 may be electrically connected to one end of the second active layer 220 via a third pixel via, and the second drain electrode 222 of the second transistor 22 may be electrically connected to the other end of the second active layer 220 via a fourth pixel via. The second source-drain metal layer may include at least a first relay electrode 241. The first relay electrode 241 may be electrically connected to the first drain electrode 212 of the first transistor 21 of the pixel circuit via a fifth pixel via opened in the passivation layer 107 and the first flat layer 108. In this example, the first relay electrode 241 enables electrical connection between the pixel circuit and the light-emitting element.

[0075] In some examples, the gate lines of the display area may be located in, for example, the first gate metal layer and the third gate metal layer, the data lines of the display area may be located in, for example, the second source-drain metal layer, and the high-potential power lines of the display area may be located in, for example, the second source-drain metal layer. This embodiment is not limited to these locations.

[0076] In some examples, as shown in Figure 2, the light-emitting structure layer 13 may include a pixel definition layer 134 and a plurality of light-emitting elements. For example, each light-emitting element may include a stacked first electrode 131, an organic light-emitting layer 132, and a second electrode 133. The first electrode 131 of the light-emitting element may be an anode, and the first electrode 131 may be installed in the second flat layer 109 and electrically connected to a first relay electrode 241 via a sixth pixel via opened in the second flat layer 109. The pixel definition layer 134 is installed in the first electrode 131 and the second flat layer 109, and a plurality of pixel apertures may be opened in the pixel definition layer 134, with one pixel aperture exposing at least a portion of the surface of a corresponding first electrode 131. At least a portion of the organic light-emitting layer 132 may be installed in one pixel aperture and connected to the corresponding first electrode 131. The second electrode 133 may be installed in the organic light-emitting layer 132 and connected to the organic light-emitting layer 132. The organic light-emitting layer 132 can emit light rays of the corresponding color when driven by the first electrode 131 and the second electrode 133.

[0077] In some examples, the organic light-emitting layer 132 of the light-emitting element may include an Emitting Layer (EML) and one or more film layers from among a Hole Injection Layer (HIL), Hole Transport Layer (HTL), Hole Block Layer (HBL), Electron Block Layer (EBL), Electron Injection Layer (EIL), and Electron Transport Layer (ETL). Under voltage driving of the first electrode 131 and the second electrode 133, the light-emitting properties of the organic material can be utilized to emit light according to the required grayscale.

[0078] In some examples, the light-emitting layers of different colored light-emitting elements may be different. For example, a red light-emitting element includes a red light-emitting layer, a green light-emitting element includes a green light-emitting layer, and a blue light-emitting element includes a blue light-emitting layer. To reduce process difficulty and improve yield, a common layer may be used for the hole injection layer and hole transport layer located on one side of the light-emitting layer, and a common layer may be used for the electron injection layer and electron transport layer located on the other side of the light-emitting layer. In some examples, one or more of the hole injection layer, hole transport layer, electron injection layer, and electron transport layer may be fabricated by a primary process (primary deposition process or primary inkjet printing process), and isolation can be achieved by means of surface steps or surface treatment of the formed film layer. For example, one or more of the hole injection layer, hole transport layer, electron injection layer, and electron transport layer corresponding to adjacent subpixels may be isolated. In some examples, the organic light-emitting layer may be fabricated by deposition using a fine metal mask (FMM) or an open mask, or by an inkjet process.

[0079] In some examples, as shown in Figure 2, the sealing structure layer 14 may include a first sealing layer 141, a second sealing layer 142, and a third sealing layer 143 that are stacked. The first sealing layer 141 and the third sealing layer 143 may be made of inorganic materials, such as silicon nitride, silicon oxide, or silicon oxynitride. Inorganic materials have high density and can prevent the intrusion of water, oxygen, etc. The second sealing layer 142 is installed between the first sealing layer 141 and the third sealing layer 143 to prevent external water vapor from entering the light-emitting element. The second sealing layer 142 may be made of an organic material. For example, it may be a polymer material containing a desiccant or a polymer material that can block water vapor. Alternatively, it may be a polymer resin, etc., for the surface planarization treatment of the display panel. The stress on the first sealing layer 141 and the third sealing layer 143 can be relieved, and it can also absorb substances such as water and oxygen that have entered the interior, including water-absorbing materials such as desiccants. However, this embodiment is not limited to this. For example, the sealing structure layer may employ a five-layer stacked structure of inorganic / organic / organic / organic / organic.

[0080] In some examples, the touch structure layer of the display area may include a plurality of first touch electrodes, a plurality of first connectors, a plurality of second touch electrodes, and a plurality of second connectors. The plurality of first touch electrodes may be located on the same layer, and adjacent first touch electrodes may be connected via first connectors. The plurality of second touch electrodes may be located on the same layer, and adjacent second touch electrodes may be connected via second connectors.

[0081] In some examples, as shown in Figure 2, the touch structure layer 15 of the display area may include a touch buffer layer (TBL) 150, a first touch conductive layer 151, a touch interlayer insulating layer (TLD) 153, a second touch conductive layer 152, and a protective layer 154, which are sequentially installed in a direction perpendicular to the display panel. The touch buffer layer 150 and the touch interlayer insulating layer 153 may be inorganic insulating layers, and the protective layer 154 may be an organic insulating layer. For example, the first touch conductive layer 151 may include a plurality of first touch electrodes, a plurality of second touch electrodes, and a plurality of first connection parts. The first touch electrodes and the first connection parts may be an integrated structure connected to each other. The second touch conductive layer 152 may include a plurality of second connection parts. The second connection parts may be connected to adjacent second touch electrodes via vias opened in the touch interlayer insulating layer. However, this embodiment is not limited to this. In other examples, the first touch conductive layer may include a plurality of first touch electrodes, a plurality of second touch electrodes, and a plurality of second connectors, and the second touch electrodes and second connectors may be an integrated structure connected to each other. The second touch conductive layer may include a plurality of first connectors, and the first connectors may be connected to adjacent first touch electrodes via vias opened in the intertouch insulating layer. In some examples, the first touch electrodes may be drive (Tx) electrodes and the second touch electrodes may be measuring (Rx) electrodes. Alternatively, the first touch electrodes may be measuring (Rx) electrodes and the second touch electrodes may be drive (Tx) electrodes. This embodiment is not limited thereto.

[0082] In some examples, the first and second touch electrodes may be rhombic, for example, regular rhombuses, horizontally elongated rhombuses, or vertically elongated rhombuses. In other examples, the first and second touch electrodes may have one or more of the shapes of triangles, squares, trapezoids, parallelograms, pentagons, hexagons, and other polygons, and are not limited to these shapes in the embodiments of this disclosure.

[0083] In some examples, the first and second touch electrodes may be in the form of transparent conductive electrodes. In other examples, the first and second touch electrodes may be in the form of a metal mesh, which may be formed by the intersection of multiple metal wires, and the metal mesh may contain multiple mesh patterns, which may be polygons made up of multiple metal wires. The metal mesh type first and second touch electrodes have advantages such as low resistance, small thickness, and fast response speed.

[0084] In some examples, as shown in Figure 1A, the first frame area B1 of the display panel may include fan-out wiring areas B11 and signal access areas B12, which are sequentially installed along the direction away from the display area AA. Figure 1A illustrates only a few of the wirings within the first frame area. In this example, the number of wirings in the first frame area is not limited.

[0085] In some examples, as shown in Figure 1A, the fan-out wiring area B11 may be connected between the display area AA and the signal access area B12. At least several data fan-out lines 42 may be installed in the fan-out wiring area B11. The several data fan-out lines 42 may be electrically connected to several data lines DL in the display area AA, for example, the several data fan-out lines 42 may be electrically connected to several data lines DL in a one-to-one correspondence. The several data fan-out lines 42 may extend toward the signal access area B12 in a fan-out wiring configuration. The several data fan-out lines 42 and the several data lines DL may be located in different film layers, and the data fan-out lines 42 may be connected to the data lines DL via vias opened in the insulating layer.

[0086] In some examples, as shown in Figure 1A, the signal access region B12 may include at least one first signal access region B121. In this example, one first signal access region is illustrated and described. In other examples, the display panel is a large-size panel, and the display panel may include multiple first signal access regions, which may be arranged sequentially along a first direction X.

[0087] In some examples, as shown in Figure 1A, the first signal access area B121 may also be referred to as the driver chip (IC) installation area. Multiple contact pads (bumps) 31 may be installed in the first signal access area B121, and the multiple contact pads 31 may be configured to be bound to at least one driver chip. The driver chip may generate the drive signals necessary to drive the subpixels and may be configured to provide the drive signals to the data line DL of the display area AA. For example, the drive signals may be data signals that drive the subpixels. In some examples, the driver chip may be a central processing unit, a digital signal processor, a system on a chip (SoC), etc. For example, the driver chip may further include hardware circuits and computer-executable code, etc. The hardware circuits may include typical very large-scale integrated circuits (VLSI) or gate arrays, and existing semiconductors or other discrete elements such as logic chips and transistors. The hardware circuits may further include field-programmable gate arrays, programmable array logic, programmable logic devices, etc.

[0088] In some examples, as shown in Figure 1A, at least a number of data leads 41 may be installed in the signal access area B12, and the number of data leads 41 may be electrically connected to a number of data fan-out lines 42 in the fan-out wiring area B11, for example, in a one-to-one correspondence. For example, the data leads 41 and the data fan-out lines 42 to which they are connected may be an integrated structure connected to each other. The number of data leads 41 may extend into the first signal access area B121 and be electrically connected to a number of contact pads 31 in the first signal access area B121. For example, the number of data leads 41 may be electrically connected to a number of contact pads 31 in a one-to-one correspondence, or a single data lead 41 may be electrically connected to at least one contact pad 31. The data leads 41 and data fan-out lines 42 may transmit data signals provided from the drive chip to the data lines DL in the display area.

[0089] In some examples, as shown in Figure 1A, the multiple contact pads 31 of the first signal access area B121 may be arranged in multiple rows (for example, two or three rows). The multiple contact pads 31 contained in each row may be arranged sequentially along a first direction X, and the contact pads 31 of multiple rows may be arranged sequentially along a second direction Y. Two adjacent rows of contact pads 31 may be offset in the first direction X, however, this embodiment is not limited to this. In other examples, the multiple contact pads of the first signal access area B121 may be arranged in a single row. In this example, a single row of contact pads may also be referred to as a set of contact pads.

[0090] In some examples, as shown in Figure 1B, the first frame area B1 of the display panel may include a fan-out wiring area B11, a bend area B13, and a signal access area B12, which are sequentially installed along the direction away from the display area AA. Figure 1B illustrates only a few of the wirings within the first frame area. In this example, the number of wirings in the first frame area is not limited.

[0091] In some examples, as shown in Figure 1B, the folding region B13 may be connected between the fan-out wiring region B11 and the signal access region B12, and the signal access region B12 may be configured to be folded to the back surface of the display region AA. At least several data folding connection lines 43 may be installed in the folding region B13. One end of the data folding connection line 43 may be connected to the data fan-out line 42 in the fan-out wiring region B11, and the other end may be connected to the data lead line 41 in the signal access region B12. The multiple data folding connection lines 43 may have the same layer structure, for example, located in the first source-drain metal layer or the second source-drain metal layer. Other structures of the first frame region B1 in this example will not be repeated here as they can be found in the description of the above embodiment.

[0092] Figure 3 is a schematic local view of a signal access area according to at least one embodiment of the present disclosure. In some examples, the plurality of contact pads 31 of the first signal access area may be divided into at least several sets (e.g., three sets). Figure 3 illustrates and describes two sets of contact pads (e.g., a first set of contact pads and a second set of contact pads). The second set of contact pads may be located on the side of the first set of contact pads that is away from the display area. The first set of contact pads may include a plurality of contact pads 31 arranged along a first direction X. The second set of contact pads may include a plurality of contact pads 31 arranged along the first direction X. The first set of contact pads and the second set of contact pads may be offset in the first direction X. For example, the contact pads of the first set of contact pads and the contact pads of the second set of contact pads may not be aligned in the second direction Y. There may be spacing between adjacent contact pads in the same set and between contact pads in adjacent sets. In this example, one set of contact pads may be one row of contact pads. In this example, there are no restrictions on the number of rows of contact pads or the number of contact pads in each row.

[0093] In some examples, as shown in Figure 3, multiple data leads 41 may extend along approximately the second direction Y, between multiple contact pads 31. For example, two data leads 41 may be installed between two adjacent contact pads 31 of a set of contact pads. One data lead 41 may be electrically connected to at least one contact pad 31; for example, one data lead 41 may be connected to one contact pad 31.

[0094] Figure 4 is a schematic local cross-sectional view along the P-P' direction in Figure 3. Figure 4 illustrates the cross-sectional structure of one contact pad 31. In some examples, as shown in Figures 3 and 4, one contact pad 31 may include four contact pad metal layers that are stacked, for example, a first contact pad metal layer 311, a second contact pad metal layer 312, a third contact pad metal layer 313, and a fourth contact pad metal layer 314. The first contact pad metal layer 311, the second contact pad metal layer 312, the third contact pad metal layer 313, and the fourth contact pad metal layer 314 may be installed sequentially along the direction away from the base 10. The first contact pad metal layer 311 may be in direct contact with the second contact pad metal layer 312, and the third contact pad metal layer 313 may be in direct contact with the second contact pad metal layer 312. The fourth contact pad metal layer 314 may contact the third contact pad metal layer 313 via vias opened in the first organic insulating layer 109a, the touch buffer layer 150, and the inter-touch insulating layer 153.

[0095] In some examples, as shown in Figure 4, the orthographic projection of the second contact pad metal layer 312 on the base 10 may cover the orthographic projection of the first contact pad metal layer 311 on the base 10. The second contact pad metal layer 312 may cover the edge of the first contact pad metal layer 311. The orthographic projection of the third contact pad metal layer 313 on the base 10 may cover the orthographic projection of the second contact pad metal layer 312 on the base 10. The third contact pad metal layer 313 may cover the edge of the second contact pad metal layer 312. The orthographic projection of the fourth contact pad metal layer 314 on the base 10 may cover the orthographic projection of the third contact pad metal layer 313 on the base 10. The fourth contact pad metal layer 314 may partially contact the surface of the third contact pad metal layer 313 away from the base 10. In this example, the third contact pad metal layer 313 covers the edge of the second contact pad metal layer 312, and the second contact pad metal layer 312 covers the edge of the first contact pad metal layer 311, thereby maintaining the structural stability of the contact pads.

[0096] In some examples, as shown in Figure 4, the first contact pad metal layer 311 may be located on the third gate metal layer and may have the same layer structure as the second gate electrode of the second transistor in the display area. The second contact pad metal layer 312 may be located on the first source-drain metal layer and may have the same layer structure as the first source electrode and first drain electrode of the first transistor in the display area, and the second source electrode and second drain electrode of the second transistor. The third contact pad metal layer 313 may be located on the second source-drain metal layer and may have the same layer structure as the first relay electrode in the display area. The fourth contact pad metal layer 314 may be located on the second touch conductive layer and may have the same layer structure as, for example, the second connection portion of the touch structure layer in the display area. However, this embodiment is not limited thereto. In other examples, the fourth contact pad metal layer may be located on the first touch conductive layer. In other examples, if the touch structure layer includes only one touch conductive layer, the fourth contact pad metal layer may be installed on the same layer as the touch conductive layer.

[0097] In some examples, as shown in Figures 3 and 4, the contact pad 31 may further include an inactive contact pad metal layer 310 located on the side of the multiple contact pad metal layers closer to the base 10. The inactive contact pad metal layer 310 may be located on the side of the first contact pad metal layer 311 closer to the base 10. The orthographic projection of the first contact pad metal layer 311 on the base 10 may cover the orthographic projection of the inactive contact pad metal layer 310 on the base 10. There is no direct electrical connection between the first contact pad metal layer 311 and the inactive contact pad metal layer 310. In this example, the installation of the inactive contact pad metal layer 310 can increase the height of the multiple contact pad metal layers, reduce the step difference between the contact pad and the surrounding film layer, and improve the film layer crack situation in the binding process of the drive chip.

[0098] In some examples, as shown in Figure 4, a first inorganic insulating layer 101a may be installed on the side of the inactive contact pad metal layer 310 closer to the base 10. For example, the first inorganic insulating layer 101a and the first gate insulating layer of the display area may be installed on the same layer. A second inorganic insulating layer 102a, a third inorganic insulating layer 103a, a fourth inorganic insulating layer 104a, and a fifth inorganic insulating layer 105a may be installed between the first contact pad metal layer 311 and the inactive contact pad metal layer 310 of the contact pad. The second inorganic insulating layer 102a, the third inorganic insulating layer 103a, the fourth inorganic insulating layer 104a, and the fifth inorganic insulating layer 105a may be installed sequentially along the direction away from the base 10. For example, the second inorganic insulating layer 102a may be installed on the same layer as the second gate insulating layer of the display area, the third inorganic insulating layer 103a may be installed on the same layer as the first interlayer insulating layer of the display area, the fourth inorganic insulating layer 104a may be installed on the same layer as the first buffer layer of the display area, and the fifth inorganic insulating layer 105a may be installed on the same layer as the third gate insulating layer of the display area.

[0099] In some examples, as shown in Figure 4, the orthographic projections of the first inorganic insulating layer 101a and the second inorganic insulating layer 102a on the base 10 may cover the orthographic projection of the contact pad on the base 10, and may be located in the spacing between adjacent contact pads. The inorganic composite insulating layer in this example may include a third inorganic insulating layer 103a, a fourth inorganic insulating layer 104a, and a fifth inorganic insulating layer 105a. The inorganic composite insulating layer is located on the side of the first contact pad metal layer 311 closer to the base 10 and is situated between the first contact pad metal layer 311 and the inactive contact pad metal layer 310. The orthographic projection of the inorganic composite insulating layer on the base 10 may cover the orthographic projection of the inactive contact pad metal layer 310 on the base 10. The orthographic projection of the inorganic composite insulating layer on the base 10 may cover the orthographic projection of the overlapping region of the first contact pad metal layer 311, the second contact pad metal layer 312, the third contact pad metal layer 313, and the fourth contact pad metal layer 314 on the base 10. The sides of the inorganic composite insulating layer are in contact with the second contact pad metal layer 312. In this example, by placing the inorganic composite insulating layer below the four contact pad metal layers, the height of the four contact pad metal layers is increased, the step difference between the contact pads and the surrounding film layer is reduced, and the film layer crack situation in the binding process of the drive chip can be improved.

[0100] In some examples, as shown in Figure 4, a first organic insulating layer 109a may be installed on the side of the third contact pad metal layer 313 away from the base 10. The first organic insulating layer 109a may be installed on the same layer as, for example, the second flat layer 109 of the display area. The orthographic projection of the first organic insulating layer 109a on the base 10 and the orthographic projection of the third contact pad metal layer 313 on the base 10 may partially overlap. For example, the first organic insulating layer 109a may cover the edge of the third contact pad metal layer 313. The first organic insulating layer 109a does not have to be installed in the space between adjacent contact pads. A touch buffer layer 150 and an inter-touch insulating layer 153 may be installed sequentially on the side of the first organic insulating layer 109a away from the base 10. The orthographic projections of the touch buffer layer 150 and the inter-touch insulating layer 153 on the base 10 may cover the orthographic projection of the first organic insulating layer 109a on the base 10. The fourth contact pad metal layer 314 may be electrically connected to the third contact pad metal layer 313 via vias opened in the intertouch insulating layer 153, the touch buffer layer 150, and the first organic insulating layer 109a.

[0101] Figure 5 is a localized enlarged view of region S1 in Figure 3. Figure 6A is a schematic diagram of the first gate metal layer in Figure 5. Figure 6B is a schematic diagram of the third gate metal layer in Figure 5. Figure 7 is a schematic local cross-sectional view along the Q-Q' direction in Figure 5.

[0102] In some examples, as shown in Figures 3 and 5, a plurality of access connection lines 44 may be further provided in the signal access area. The plurality of access connection lines 44 may extend approximately along the second direction Y to the first signal access area B121 and be connected to contact pads in the first signal access area B121. The plurality of data lead lines 41 may extend approximately along the second direction Y to the first signal access area B121. The plurality of access connection lines 44 may be electrically connected to the plurality of data lead lines 41, for example, the plurality of access connection lines 44 and the plurality of data lead lines 41 may be electrically connected in a one-to-one correspondence. The orthographic projections at base of the access connection lines 44 and the data lead lines 41 to be connected may overlap at least partially, for example, the orthographic projection at base of the access connection line 44 may be located within the range of the orthographic projection at base of the corresponding data lead line 41. The access connection lines 44 and the data lead lines 41 may be electrically connected via connection electrodes 45. The plurality of connection electrodes 45 may be located on the side closer to the display area of ​​the plurality of contact pads 31. The multiple connection electrodes 45 may be located, for example, on the side of the first set of contact pads away from the second set of contact pads (i.e., the side closer to the display area), and the multiple connection electrodes 45 may be arranged in a single row along the first direction X. However, this embodiment is not limited to this. In other examples, the multiple connection electrodes may be arranged in multiple rows.

[0103] In some examples, as shown in Figures 5 and 6A, multiple data leads 41 may be located in the first gate metal layer. Multiple data leads 41 may extend substantially along the second direction Y and be arranged sequentially along the first direction X. A single data lead 41 and the invalid contact pad metal layer 310 of at least one contact pad may be connected to each other in an integrated structure. The length L1 of the invalid contact pad metal layer 310 along the first direction X may be greater than the line width L2 of the data lead 41 (i.e., the length in the first direction X). Two data leads 41 may be placed between two adjacent invalid contact pad metal layers 310, however, this embodiment is not limited to this. For example, one or more data leads may be placed between two adjacent invalid contact pad metal layers.

[0104] In some examples, as shown in Figures 5 and 6B, multiple access connection lines 44 may be located in the third gate metal layer. Multiple access connection lines 44 may extend substantially along the second direction Y and be arranged sequentially along the first direction X. One access connection line 44 may be electrically connected to at least one contact pad. The access connection line 44 and the first contact pad metal layer 311 of the contact pad to which it is connected may be an integrated structure connected to each other. The length L3 of the first contact pad metal layer 311 along the first direction X may be greater than the line width L4 of the access connection line 44 (i.e., the length in the first direction X). Two access connection lines 44 may be installed between two adjacent first contact pad metal layers 311, however, this is not limited in this embodiment. For example, one or more data lead lines may be installed between two adjacent first contact pad metal layers.

[0105] In some examples, as shown in Figures 5 and 7, one access connection line 44 may be electrically connected to one data lead line 41 via one connection electrode 45. The connection electrode 45 may be located on the side of the access connection line 44 and the data lead line 41 away from the base 10. For example, the connection electrode 45 may be located in the first source-drain metal layer. The data lead line 41 may be located in the first gate metal layer, and a first inorganic insulating layer 101a may be installed on the side of the data lead line 41 closer to the base 10, on the same layer as the first gate insulating layer. The access connection line 44 may be located in the third gate metal layer. Between the data lead line 41 and the access connection line 44, a second inorganic insulating layer 102a may be installed on the same layer as the second gate insulating layer, a third inorganic insulating layer 103a may be installed on the same layer as the first interlayer insulating layer, a fourth inorganic insulating layer 104a may be installed on the same layer as the first buffer layer, and a fifth inorganic insulating layer 105a may be installed on the same layer as the third gate insulating layer, in sequence. A sixth inorganic insulating layer 106a may be installed between the access connection line 44 and the connection electrode 45. For example, the sixth inorganic insulating layer 106a may be installed on the same layer as the second interlayer insulating layer of the display area.

[0106] In some examples, as shown in Figures 5 and 7, a plurality of first vias K1 and a plurality of second vias K2 may be provided in the sixth inorganic insulating layer 106a of the signal access area. The sixth inorganic insulating layer 106a, fifth inorganic insulating layer 105a, fourth inorganic insulating layer 104a, third inorganic insulating layer 103a, and second inorganic insulating layer 102a within the first via K1 may be removed to expose a portion of the surface of the data lead wire 41. The sixth inorganic insulating layer 106a within the second via K2 may be removed to expose a portion of the surface of the access connection wire 44.

[0107] In some examples, as shown in Figures 5 and 7, the connecting electrode 45 may be an elongated structure extending along the second direction Y. One end of the connecting electrode 45 may be electrically connected to the data lead line 41 via a plurality of first vias K1 (e.g., four first vias K1 arranged along the second direction Y), and the other end may be electrically connected to the access connection line 44 via a plurality of second vias K2 (e.g., four second vias K2 arranged along the second direction Y). In this example, the connecting electrode 45 provides the electrical connection between the data lead line 41 and the access connection line 44, and there is no direct electrical connection between the data lead line 41 and the access connection line 44 installed in the gap between adjacent contact pads; only their orthographic projections at the base overlap. A fifth inorganic insulating layer 105a, a fourth inorganic insulating layer 104a, a third inorganic insulating layer 103a, and a second inorganic insulating layer 102a may be installed between the data lead line 41 and the access connection line 44 installed in the gap between adjacent contact pads. In this example, a portion of the inorganic composite insulating layer (including the fifth inorganic insulating layer 105a, the fourth inorganic insulating layer 104a, and the third inorganic insulating layer 103a) is located in the space between adjacent contact pads. The orthogonal projection of the inorganic composite insulating layer on the base in the space between adjacent contact pads may overlap with the orthogonal projection of the data lead wires 41 and access connection wires 44 on the base, and may, for example, cover the orthogonal projection of the data lead wires 41 on the base. The inorganic composite insulating layer in the space between the data lead wires 41 and adjacent contact pads, and in the space between adjacent data lead wires 41, may be removed. However, this embodiment is not limited to this. In this example, by removing the inorganic composite insulating layer in the space between adjacent contact pads, except where the data lead wires and access connection wires are located, the height of the surrounding film layer of the contact pads can be reduced, the step difference between the contact pads and the surrounding film layer can be reduced, and the condition of film layer cracks in the binding process of the drive chip can be improved.

[0108] In some examples, as shown in Figure 5, the orthographic projection of the sixth inorganic insulating layer 106a of the signal access area on the base and the orthographic projection of the multiple data lead lines 41 and the multiple access connection lines 44 on the base may partially overlap, while the orthographic projection of the sixth inorganic insulating layer 106a on the base and the orthographic projection of the multiple contact pads 31 on the base may not overlap. The orthographic projections of the data lead lines 41 and access connection lines 44 on the base in the space between the sixth inorganic insulating layer 106a and the multiple contact pads 31 may not overlap. For example, the signal access area may include a first signal access area B121 and a second area B122 located on the side of the first signal access area B121 closer to the display area. The multiple contact pads 31 may be located in the first signal access area B121, and the multiple connection electrodes 45 may be located in the second area B122. The sixth inorganic insulating layer 106a in the first signal access area B121 may be removed, and the sixth inorganic insulating layer 106 in the second area B122 may be retained. In this example, the sixth inorganic insulating layer is not installed in the first signal access region B121 (including the location of the contact pads and the spacing region between the contact pads), which improves the step difference between the contact pads and the surrounding film layer, and also avoids the risk of wire breakage caused by excessive etching of the metal due to the etching process of the sixth inorganic insulating layer in the first signal access region B121.

[0109] The manufacturing process of a display panel will be illustrated below with reference to Figures 2 to 7. The “patterning process” described in this disclosure includes processes such as photoresist coating, mask exposure, development, etching, and photoresist stripping for metallic materials, inorganic materials, or transparent conductive materials, and processes such as organic material coating, mask exposure, and development for organic materials. Deposition may be one or more of sputtering, vapor deposition coating, or chemical vapor deposition. Coating may be one or more of spray coating, spin coating, and inkjet printing. Etching may be one or more of dry etching and wet etching, but is not limited to these. A “thin film” refers to a single thin film produced on a base by deposition, coating, or other processes using a certain material. If the “thin film” does not require a patterning process throughout the manufacturing process, the “thin film” is also referred to as a “layer.” If the “thin film” requires a patterning process throughout the manufacturing process, it is referred to as a “thin film” before the patterning process and as a “layer” after the patterning process. Each "layer" after the patterning process contains at least one "pattern".

[0110] As described in this disclosure, “A and B are identical layer structures” means that A and B are formed simultaneously by the same patterning process. The “thickness” of a film layer is its size in the direction perpendicular to the display panel. The “height” of a film layer is the distance between the surface of the film layer away from the base and the plane on which the base is located. In exemplary embodiments of this disclosure, “the orthographic projection of A includes the orthographic projection of B” or “the orthographic projection of B is within the range of the orthographic projection of A” means that the boundary of the orthographic projection of B is within the boundary range of the orthographic projection of A, or that the boundary of the orthographic projection of A overlaps with the boundary of the orthographic projection of B.

[0111] In some cases, the manufacturing process of a display panel may include the following operations:

[0112] (1) A base is provided. In some examples, the base 10 may be a flexible base and may include, for example, a first flexible material layer, a first inorganic material layer, a second flexible material layer, and a second inorganic material layer that are laminated on a glass carrier plate. The first flexible material layer and the second flexible material layer may be made of materials such as polyimide (PI), polyethylene terephthalate (PET), or a surface-treated polymer soft film. The first inorganic material layer and the second inorganic material layer may be made of silicon nitride (SiNx) or silica (SiOx), etc., to improve the water and oxygen resistance of the base. The first inorganic material layer and the second inorganic material layer may also be called barrier layers, however, this is not limited in this embodiment. In some examples, a laminated structure consisting of a first flexible material layer / first barrier layer / second barrier layer / second flexible material layer is used as an example, and its manufacturing process includes the following steps. First, one layer of polyimide is applied to a glass carrier plate, cured, and formed to create the first flexible material layer. Then, one barrier thin film is deposited on the first flexible material layer to form the first barrier layer covering the first flexible layer. Next, another layer of polyimide is applied to the first barrier layer, cured, and formed to create the second flexible material layer. Finally, one barrier thin film is deposited on the second flexible material layer to form the second barrier layer covering the second flexible material layer, completing the manufacturing of the flexible base 10.

[0113] (2) A first semiconductor layer is fabricated on the base. In some examples, a first semiconductor thin film is deposited on the base, and the first semiconductor thin film is patterned by a patterning process to form a first semiconductor layer. As shown in Figure 2, the first semiconductor layer may be formed in the display area and includes at least the first active layer 210 of the first transistor 21.

[0114] (3) A first gate metal layer is fabricated on the base. In some examples, a first insulating thin film and a first conductive thin film are sequentially deposited on the base on which the above structure is formed, and the first conductive thin film is patterned by a patterning process to form a first gate metal layer to be placed on the first insulating thin film. The first insulating thin film may form a first gate insulating layer 101 in the display area and a first inorganic insulating layer 101a in the signal access area. As shown in Figures 2, 4 and 7, the first gate metal layer may include at least a first gate electrode 213 of a first transistor 21 located in the display area, a first electrode plate 231 of a capacitor 23, and a data lead wire 41 and a deactivated contact pad metal layer 310 located in the signal access area. A single data lead wire 41 and at least one deactivated contact pad metal layer 310 may be an integrated structure connected to each other.

[0115] (4) A second gate metal layer is fabricated on the base. In some examples, a second insulating thin film is deposited on the base on which the above structure is formed to form a second gate insulating layer 102 located in the display area and a second inorganic insulating layer 102a located in the signal access area. Then, a second conductive thin film is deposited and the second conductive thin film is patterned by a patterning process to form a second gate metal layer. As shown in Figures 2, 4 and 7, the second gate metal layer may include at least the second electrode plate 232 of the capacitor 23 located in the display area and the third gate electrode 224 of the second transistor 22.

[0116] (5) A second semiconductor layer is fabricated on the base. In some examples, a third insulating thin film, a fourth insulating thin film, and a second semiconductor thin film are deposited on the base on which the above structure is formed, and the second semiconductor thin film is patterned by a patterning process to form a second semiconductor layer. As shown in Figures 2, 4, and 7, the second semiconductor layer may include a second active layer 220 of the second transistor 22 located in the display region. The third insulating thin film may form a first interlayer insulating layer 103 in the display region and a third inorganic insulating layer 103a in the signal access region. The fourth insulating thin film may form a first buffer layer 104 in the display region and a fourth inorganic insulating layer 104a in the signal access region.

[0117] (6) A third gate metal layer is fabricated on the base. In some examples, a fifth insulating thin film and a third conductive thin film are sequentially deposited on the base on which the above structure is formed, and the third conductive thin film is patterned by a patterning process to form the third gate metal layer. As shown in Figures 2, 4 and 7, the third gate metal layer may include at least the second gate electrode 223 of the second transistor 22 located in the display area, the access connection line 44 located in the signal access area, and the first contact pad metal layer 311 of the contact pad 31. The access connection line 44 and the first contact pad metal layer 311 to which it is connected may be an integrated structure connected to each other. The fifth insulating thin film may form a third gate insulating layer 105 in the display area and a fifth inorganic insulating layer 105a in the signal access area. In some examples, after forming the third gate metal layer, the fifth insulating thin film, the fourth insulating thin film, and the third insulating thin film in the signal access region may be etched to form the fifth inorganic insulating layer 105a, the fourth inorganic insulating layer 104a, and the third inorganic insulating layer 103a. For example, in the signal access region, the fifth insulating thin film, the fourth insulating thin film, and the third insulating thin film that are not obstructed by the third gate metal layer may be etched. In some examples, the thickness of the fourth inorganic insulating layer 104a may be approximately 2000 to 4000 angstroms, and the thickness of the fifth inorganic insulating layer 105a may be approximately 1000 to 2000 angstroms. This embodiment is not limited to this.

[0118] (7) A second interlayer insulating layer and a sixth inorganic insulating layer are manufactured on the base. In some examples, a sixth insulating thin film is deposited on the base on which the above structure is formed, and the sixth insulating thin film is patterned by a patterning process to form the second interlayer insulating layer 106 in the display area and the sixth inorganic insulating layer 106a in the signal access area. For example, a plurality of pixel vias (e.g., including the first to fourth pixel vias) may be formed in the second interlayer insulating layer of the display area. A plurality of vias (e.g., including the first and second vias) may be formed in the sixth inorganic insulating layer 106a of the signal access area. In some examples, the sixth inorganic insulating layer 106a in the first signal access area B121 may be removed. In some examples, the thickness of the sixth inorganic insulating layer may be about 4000 to 6000 angstroms.

[0119] (8) A first source-drain metal layer is fabricated on the base. In some examples, a fourth conductive thin film is deposited on the base on which the above structure is formed, and the fourth conductive thin film is patterned by a patterning process to form the first source-drain metal layer. As shown in Figures 2, 4 and 7, the first source-drain metal layer may include at least the first source electrode 211 and first drain electrode 212 of the first transistor 21 located in the display area, the second source electrode 221 and second drain electrode 222 of the second transistor 22, and the second contact pad metal layer 312 of the connecting electrode 45 and contact pad 31 located in the signal access area. The first source electrode 211 and first drain electrode 212 of the first transistor 21 may be connected to both ends of the first active layer 210 of the first transistor 21 via first and second pixel vias, respectively, and the second source electrode 221 and second drain electrode 222 of the second transistor 22 may be connected to both ends of the second active layer 220 of the second transistor 22 via third and fourth pixel vias, respectively. The connecting electrode 45 may be electrically connected to the data lead line 41 located in the first gate metal layer and the access connection line 44 located in the third gate metal layer via at least one first via K1 and at least one second via K2. Since the sixth inorganic insulating layer in the first signal access area has been removed, the second contact pad metal layer 312 of the contact pad can directly contact the first contact pad metal layer 311 located in the third gate metal layer to achieve electrical connection. The second contact pad metal layer 312 may cover the edge of the first contact pad metal layer 311 or contact the side of the inorganic composite insulating layer, ensuring not only the stability of the stacked installation of the contact pad metal layers but also protecting the first contact pad metal layer 311.

[0120] (9) A second source-drain metal layer is fabricated on the base. In some examples, a seventh insulating thin film is deposited on the base on which the above structure is formed to form a passivation layer 107, then an eighth insulating thin film is applied, and the eighth insulating thin film is patterned by a patterning process to form a first flat layer 108. For example, both the passivation layer 107 and the first flat layer 108 in the signal access area may be removed. As shown in Figure 2, a fifth pixel via may be opened in the first flat layer 108 in the display area, and the passivation layer 107 and the first flat layer 108 in the fifth pixel via may be removed to expose a portion of the surface of the first drain electrode 212 of the first transistor 21 of the pixel circuit. In some examples, a sixth conductive thin film is deposited on a base on which the above structure is formed, and the sixth conductive thin film is patterned by a patterning process to form a second source-drain metal layer. As shown in Figures 2, 4, and 7, the second source-drain metal layer may include at least a first relay electrode 241 located in the display area and a third contact pad metal layer 313 of a contact pad 31 located in the signal access area. The first relay electrode 241 may be electrically connected to the first drain electrode 212 of the first transistor 21 of the pixel circuit via a fifth pixel via. Since both the passivation layer 107 and the first flat layer 108 in the first signal access area are removed, the third contact pad metal layer 313 of the contact pad can directly contact the second contact pad metal layer 312 located in the first source-drain metal layer to achieve electrical connection. The third contact pad metal layer 313 may cover the edge of the second contact pad metal layer 312, which not only ensures the stability of the stacked contact pad metal layers but also protects the first contact pad metal layer 311 and the second contact pad metal layer 312.

[0121] (10) A second flat layer is fabricated on the base. In some examples, a ninth insulating thin film is applied to the base on which the above structure is formed, and the ninth insulating thin film is patterned by a patterning process to form a second flat layer 109 located in the display area and a first organic insulating layer 109a located in the signal access area. As shown in Figure 2, a sixth pixel via may be opened in the second flat layer 109 in the display area, and the second flat layer 109 within the sixth pixel via may be removed to expose a portion of the surface of the first relay electrode 241. The first organic insulating layer 109a in the signal access area may cover the edge of the third contact pad metal layer 311, exposing a portion of the surface of the third contact pad metal layer 311 away from the base 10. The first organic insulating layer 109a between adjacent contact pads may be removed.

[0122] Up to this point, the manufacturing of the circuit structure layer for the display area in the base has been completed.

[0123] In some examples, the first, second, third, fourth, fifth, sixth, and seventh insulating films may be made of inorganic materials, such as silicon oxide (SiOx, x>0), silicon nitride (SiNy, y>0), and silicon oxynitride (SiON), and may be single layers, multiple layers, or composite layers. The eighth and ninth insulating films may be made of organic materials, such as polyimide, acrylic, or polyethylene terephthalate. The first, second, and third gate metal layers may be made of metallic materials, such as silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo), and may be single-layer structures. For example, the first, second, and third gate metal layers may each include a Mo metal layer. The first source-drain metal layer and the second source-drain metal layer may be made of a metallic material, such as one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo), or an alloy of the above metals, such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb). They may be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti. For example, the first source-drain metal layer and the second source-drain metal layer may be made of a three-layer stacked structure of Ti / Al / Ti. The first semiconductor layer may be made of one or more materials such as amorphous silicon (a-Si), polycrystalline silicon (p-Si), hexathiophene, or polythiophene, and the second semiconductor layer may be made of one or more materials such as amorphous indium gallium zinc oxide (a-IGZO), zinc oxynitride (ZnON), or indium zinc tin oxide (IZTO). In other words, this disclosure applies to transistors manufactured based on oxide technology, silicon technology, and organic technology. This is not limited to these embodiments.

[0124] (11) A light-emitting structure layer is manufactured on the base. In some examples, a transparent conductive thin film is deposited on the base 10 on which the above structure is formed, and the transparent conductive thin film is patterned by a patterning process to form a pattern for the first electrode 131 of the light-emitting element. A pixel definition thin film is applied to the base 10 on which the above structure is formed, and a pixel definition layer (PDL) 134 pattern is formed by a masking, exposure and development process. As shown in Figure 2, a pixel aperture is opened in the pixel definition layer 134 of the display area AA, and the pixel definition thin film within the pixel aperture is developed and removed to expose at least a portion of the surface of the first electrode 131. For example, the pixel definition layer 134 may be made of an organic material such as polyimide, acrylic, or polyethylene terephthalate. Then, an organic light-emitting layer 132 and a second electrode 133 are sequentially formed on the base 10 on which the above pattern is formed. As shown in Figure 2, the organic light-emitting layer 132 may include a stacked hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, and is formed within the pixel aperture of the display area AA, realizing a connection between the organic light-emitting layer 132 and the first electrode 131. Since the first electrode 131 is connected to the first drain electrode 212 of the first transistor 21, light emission control of the organic light-emitting layer 132 is realized. Part of the second electrode 133 may be formed on the organic light-emitting layer 132. After the light-emitting structure layer 13 is formed on the display area AA, the film layer structure of the signal access area is not changed.

[0125] (12) A sealing structure layer is manufactured. In some examples, a sealing structure layer 14 is formed on the base 10 on which the pattern is formed. As shown in Figure 2, the sealing structure layer 14 may be formed in the display area AA, or a laminated structure of inorganic material / organic material / inorganic material may be adopted. The organic material layer may be placed between two inorganic material layers. After forming the sealing structure layer 14, the film layer structure of the signal access area is not changed.

[0126] (13) A touch structure layer is manufactured. In some examples, as shown in Figures 2 and 4, a first touch insulating thin film is deposited on the base on which the above pattern is formed, and the first touch insulating thin film is patterned by a patterning process to form a touch buffer layer 150. Vias that expose the surface of the third contact pad metal layer 313 may be provided in the touch buffer layer of the signal access area. In some examples, the touch buffer layer 150 may be made of an inorganic insulating material, for example, one or more of silicon oxide (SiOx, x>0), silicon nitride (SiNy, y>0), and silicon oxynitride (SiON), and may be a single layer, multiple layers, or composite layer. Then, a first touch conductive thin film is deposited, and the first touch conductive thin film is patterned by a patterning process to form a first touch conductive layer 151. For example, the first touch conductive layer may include at least touch electrodes located in the display area. After forming the first touch conductive layer, the film layer structure of the signal access area does not need to be changed. Then, a touch interlayer insulating thin film is applied, and the touch interlayer insulating thin film is patterned by a patterning process to form a touch interlayer insulating layer 153 that covers the first touch conductive layer 151. Vias that expose the surface of the third contact pad metal layer 313 may be provided in the touch interlayer buffer layer 153 of the signal access region. In some examples, the touch interlayer insulating layer 153 may be made of an inorganic insulating material, for example, one or more of silicon oxide (SiOx, x>0), silicon nitride (SiNy, y>0), and silicon oxynitride (SiON), and may be a single layer, multiple layers, or composite layer. Then, a second touch conductive thin film is deposited and patterned by a patterning process to form a second touch conductive layer 152 on the intertouch insulating layer 153. For example, as shown in Figures 2, 4, and 7, the second touch conductive layer 152 may include at least a second connection located in the display area and a fourth contact pad metal layer 314 located in the signal access area. The fourth contact pad metal layer 314 may be connected to a third contact pad metal layer 313 located in the second source-drain metal layer via vias opened in the intertouch insulating layer 153, the touch buffer layer 150, and the first organic insulating layer 109a.

[0127] In some examples, the first touch conductive layer 151 and the second touch conductive layer 152 may be made of one or more metallic materials, such as silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo), and may be in a single-layer or multi-layer structure.

[0128] Then, a protective thin film is applied and the protective thin film is patterned by a patterning process to form a protective layer 154. For example, for binding connection by a drive chip, the protective layer 154 of the first signal access area may be removed to expose the surface of the second contact pad metal layer 314.

[0129] The contact pad in this example may include four stacked contact pad metal layers. By forming a contact pad by stacking multiple contact pad metal layers, it is possible to reduce the resistance of the contact pad and improve the signal transmission performance of the contact pad.

[0130] As discovered by the inventors' research, compared to display panels where multiple transistors in the pixel circuit are of the same type, the pixel circuit of the display panel in this example includes two different types of transistors. Therefore, the display structure layer includes a film layer where the second active layer and second gate electrode of the second transistor are located, a film layer between the second active layer and the second gate electrode, and insulating layers between the second active layer and the second gate electrode and other conductive film layers. For example, the added film layers may include a first buffer layer 104, a third gate insulating layer 105, and a second interlayer insulating layer 106. The thickness of the first buffer layer 104 may be approximately 2000 to 4000 angstroms, the thickness of the third gate insulating layer 105 may be approximately 1000 to 2000 angstroms, and the thickness of the second interlayer insulating layer 106 may be approximately 4000 to 6000 angstroms. Thus, the total thickness of the added film layers may be approximately 9000 angstroms to 1 micron. When these added film layers are installed in the signal access area, they affect the height difference between the contact pad and the surrounding film layer, leading to a risk of cracking of the surrounding film layer during the driver chip binding process and affecting the yield rate of the product. In this example, the height difference between the contact pad and the surrounding film layer is improved by adjusting the installation method of these added film layers in the signal access area, thereby reducing the risk of cracking of the surrounding film layer during the driver chip binding process.

[0131] In this example, the display panel utilizes an ineffective contact pad metal layer and an inorganic composite insulating layer to improve the height of the contact pads and reduce the step difference between the contact pads and the surrounding film layer. This improves the film layer cracking situation during the binding process of the drive chip, thereby increasing the stability of the binding process and the yield rate of the finished product.

[0132] In this example of the display panel, removing a portion of the inorganic composite insulating layer in the spacing area between adjacent contact pads contributes to reducing the step height between the contact pads and the surrounding film layer, improving the film layer cracking situation in the drive chip binding process, and increasing the stability of the binding process and the yield rate of the product.

[0133] In this example of the display panel, removing the sixth inorganic insulating layer in the first signal access area contributes to reducing the step height between the contact pad and the surrounding film layer. Furthermore, by avoiding the risk of wire breakage caused by excessive etching of the metal due to the etching process of the sixth inorganic insulating layer in the first signal access area, the stability of the binding process and the yield rate of the product can be improved.

[0134] Figure 8 is a partially enlarged schematic diagram of region S2 in Figure 3. Figure 9 is a schematic diagram of another partially cross-section along the P-P' direction in Figure 3.

[0135] In some examples, as shown in Figures 8 and 9, a single contact pad 31 may include four stacked contact pad metal layers, for example, a first contact pad metal layer 311, a second contact pad metal layer 312, a third contact pad metal layer 313, and a fourth contact pad metal layer 314. The first contact pad metal layer 311, the second contact pad metal layer 312, the third contact pad metal layer 313, and the fourth contact pad metal layer 314 may be installed sequentially along the direction away from the base 10. The second contact pad metal layer 312 may be in contact with the first contact pad metal layer 311 via vias opened in the sixth inorganic insulating layer 106a. The orthographic projection of the second contact pad metal layer 312 on the base 10 may cover the orthographic projection of the first contact pad metal layer 311 on the base 10. The third contact pad metal layer 313 may be in direct contact with the second contact pad metal layer 312, the orthographic projection of the third contact pad metal layer 313 on the base 10 may cover the orthographic projection of the second contact pad metal layer 312 on the base 10, and the third contact pad metal layer 313 may cover the edge of the second contact pad metal layer 312. The orthographic projection of the fourth contact pad metal layer 314 on the base 10 may cover the orthographic projection of the third contact pad metal layer 313 on the base 10. The fourth contact pad metal layer 314 may be in contact with the third contact pad metal layer 313 via vias opened in the first organic insulating layer 109a, the touch buffer layer 150, and the inter-touch insulating layer 153. The contact pad 31 may further include an inactive contact pad metal layer 310 located on the side of the first contact pad metal layer 311 closer to the base 10.

[0136] In some examples, as shown in Figures 8 and 9, the sixth inorganic insulating layer 106a in the signal access area may be placed in the space between adjacent contact pads 31. For example, the sixth inorganic insulating layer 106a may cover the edge of the first contact pad metal layer 311 of the contact pad 31, or it may cover the access connection line 44.

[0137] In some examples, as shown in Figures 8 and 9, both the data lead lines 41 and the access connection lines 44 extend between adjacent contact pads 31 in the first signal access area. A second inorganic insulating layer 102a, a third inorganic insulating layer 103a, a fourth inorganic insulating layer 104a, and a fifth inorganic insulating layer 105a may be sequentially installed between the data lead lines 41 and the access connection lines 44. A second inorganic insulating layer 102a, a third inorganic insulating layer 103a, a fourth inorganic insulating layer 104a, and a fifth inorganic insulating layer 105a may be sequentially installed between the first contact pad metal layer 311 and the inactive contact pad metal layer 310. The inorganic composite insulating layer in this example may include a second inorganic insulating layer 102a, a third inorganic insulating layer 103a, a fourth inorganic insulating layer 104a, and a fifth inorganic insulating layer 105a. The orthographic projection of the inorganic composite insulating layer on the base may cover the orthographic projection on the base of the contact pad. The orthographic projection of the inorganic composite insulating layer on the base may cover the gap between adjacent contact pads. In some examples, the thickness of the inorganic composite insulating layer located below the first contact pad metal layer 311 may be approximately the same as the thickness of the inorganic composite insulating layer in the gap area between adjacent contact pads. In other examples, the thickness of the inorganic composite insulating layer located below the first contact pad metal layer 311 may be greater than the thickness of the inorganic composite insulating layer in the gap area between adjacent contact pads. For example, the inorganic composite insulating layer in the gap area between adjacent contact pads may be thinned by reducing the thickness of at least one of the third inorganic insulating layer 103a, the fourth inorganic insulating layer 104a, and the fifth inorganic insulating layer 105a in the inorganic composite insulating layer.

[0138] In this example of a display panel, by utilizing the inactive contact pad metal layer located in the first gate metal layer, or by utilizing the inactive contact pad metal layer and an inorganic composite insulating layer, the height of the contact pad can be increased, the step difference between the contact pad and the surrounding film layer can be reduced, improving the film layer crack situation in the binding process of the drive chip, and increasing the stability of the binding process and the yield rate of the product.

[0139] The remaining structure of the display panel in this example can be found in the description of the above embodiment, so it will not be explained again here.

[0140] Figure 10 is another schematic diagram of a local enlargement of region S2 in Figure 3. Figure 11 is another schematic diagram of a local cross-section along the P-P' direction in Figure 3.

[0141] In some examples, as shown in Figures 10 and 11, a single contact pad 31 may include four stacked contact pad metal layers, for example, a first contact pad metal layer 311, a second contact pad metal layer 312, a third contact pad metal layer 313, and a fourth contact pad metal layer 314, which are sequentially installed along the direction away from the base 10. The contact pad 31 may further include an inactive contact pad metal layer 310 located on the side of the first contact pad metal layer 311 closer to the base 10. A second inorganic insulating layer 102a, a third inorganic insulating layer 103a, a fourth inorganic insulating layer 104a, and a fifth inorganic insulating layer 105a may be sequentially installed between the inactive contact pad metal layer 310 and the first contact pad metal layer 311. The inorganic composite insulating layer in this example may include a second inorganic insulating layer 102a, a third inorganic insulating layer 103a, a fourth inorganic insulating layer 104a, and a fifth inorganic insulating layer 105a. The orthographic projection of the inorganic composite insulating layer on the base may cover the orthographic projection of at least the overlapping region of the four contact pad metal layers and the inactive contact pad metal layer of the contact pad. The sides of the inorganic composite insulating layer may be in contact with the first organic insulating layer 109a.

[0142] In some examples, as shown in Figures 10 and 11, a sixth inorganic insulating layer 106a may be installed between the first contact pad metal layer 311 and the second contact pad metal layer 312 of the contact pad 31, and the sixth inorganic insulating layer 106a may cover the edge of the first contact pad metal layer 311. Vias may be provided in the sixth inorganic insulating layer 106a to expose the surface of the intermediate portion of the first contact pad metal layer 311, thereby connecting the second contact pad metal layer 312 to the first contact pad metal layer 311. The sixth inorganic insulating layer 106a may form an annular structure surrounding the edge of the first contact pad metal layer 311, for example, a rectangular annular structure. The sixth inorganic insulating layer 106a may cover the edge of the access connection line 44, exposing the intermediate portion of the access connection line 44. In other words, the edge of the second gate metal layer in the first signal access region may be covered by the sixth inorganic insulating layer 106a. The sixth inorganic insulating layer 106a does not need to be installed in the space between the contact pad and the adjacent access connection line, or in the space between adjacent access connection lines.

[0143] In some examples, as shown in Figure 11, the length over which the sixth inorganic insulating layer 106a covers one edge of the first contact pad metal layer 311 may be a first length d1. The first length d1 may be about 2.5 to 3.5 microns, for example, about 3 microns. The length of the sixth inorganic insulating layer 106a that does not cover the first contact pad metal layer 311 at one edge may be a second length d2. The second length may be about 1 to 2 microns, for example, about 1.5 microns. The length over which the sixth inorganic insulating layer 106a covers one edge of the access connection wire may be less than the length over which the first contact pad metal layer covers one edge. The length of the sixth inorganic insulating layer 106a that does not cover the access connection wire at one edge of the access connection wire may be approximately the same as the second length. This embodiment is not limited thereto.

[0144] In this example's display panel, the sixth inorganic insulating layer can be used to cover and protect the edges of the first contact pad metal layer of the contact pad in an annular shape. In this example, the sixth inorganic insulating layer is partially installed in the gaps between adjacent contact pads and is not integrally connected. The inorganic composite insulating layer is also partially installed in the gaps between adjacent contact pads and is not integrally connected. In this way, the paths caused by the rupture of the inorganic film layer during the binding process of the drive chip can be cut off, thereby preventing cracks.

[0145] The remaining structure of the display panel in this example can be found in the description of the above embodiment, so it will not be explained again here.

[0146] Figure 12 is a schematic diagram of another local cross-section along the P-P' direction in Figure 3. In some examples, as shown in Figure 12, a single contact pad 31 may include four stacked contact pad metal layers, for example, a first contact pad metal layer 311, a second contact pad metal layer 312, a third contact pad metal layer 313, and a fourth contact pad metal layer 314, which are sequentially installed along the direction away from the base 10. The first contact pad metal layer 311 may be located on the third gate metal layer, the second contact pad metal layer 312 may be located on the first source-drain metal layer, the third contact pad metal layer 313 may be located on the second source-drain metal layer, and the fourth contact pad metal layer 314 may be located on the second touch conductive layer. The contact pad 31 may further include an inactive contact pad metal layer 310 located on the side of the first contact pad metal layer 311 closer to the base 10. The inactive contact pad metal layer 310 may be located on the second gate metal layer.

[0147] In some examples, as shown in Figure 12, a third inorganic insulating layer 103a, a fourth inorganic insulating layer 104a, and a fifth inorganic insulating layer 105a may be sequentially installed between the inactive contact pad metal layer 310 and the first contact pad metal layer 311, along the direction away from the base 10. The inactive contact pad metal layer 310 and one data lead wire 41 may be an integrated structure connected to each other. The first contact pad metal layer 311 and the connected access connection wire 44 may also be an integrated structure connected to each other. The third inorganic insulating layer 103a, the fourth inorganic insulating layer 104a, and the fifth inorganic insulating layer 105a may be installed between the data lead wire 41 and the access connection wire 44.

[0148] In some examples, as shown in Figure 12, the inorganic composite insulating layer may include a third inorganic insulating layer 103a, a fourth inorganic insulating layer 104a, and a fifth inorganic insulating layer 105a, which are sequentially installed along the direction away from the base 10. The orthographic projection of the inorganic composite insulating layer on the base may cover the orthographic projection on the base 10 of at least the overlapping areas of the four contact pad metal layers and the inactive contact pad metal layer 310 of the contact pad. The inorganic composite insulating layer may be partially installed in the gaps between adjacent contact pads. The inorganic composite insulating layer may be removed in the gaps between the contact pads and adjacent access connection lines, and in the gaps between adjacent access connection lines. The sides of the inorganic composite insulating layer are in contact with the third contact pad metal layer 313. The third contact pad metal layer 313 may cover the edges of the second contact pad metal layer 312 and the first contact pad metal layer 311 on the base 10, ensuring the structural stability of the contact pad and protecting the first contact pad metal layer 311 and the second contact pad metal layer 312.

[0149] In some examples, as shown in Figure 12, the sixth inorganic insulating layer of the first signal access region may be completely removed. The second contact pad metal layer 312 may be in direct contact with the first contact pad metal layer 311.

[0150] In this example of the display panel, the inactive contact pad metal layer and inorganic composite insulating layer located in the second gate metal layer are used to improve the height of the contact pads, the sixth inorganic insulating layer in the first signal access area is completely removed, and the step difference between the contact pads and the surrounding film layers is reduced. This improves the film layer crack situation in the binding process of the drive chip, thereby increasing the stability of the binding process and the yield rate of the product.

[0151] The remaining structure of the display panel in this example can be found in the description of the above embodiment, so it will not be explained again here.

[0152] In other examples, the features of the above embodiments can be combined with each other. For example, the first contact pad metal layer of the contact pad may be located on the third gate metal layer, the inactive contact pad metal layer may be located on the second gate metal layer, the sixth inorganic insulating layer may cover the edge of the first contact pad metal layer, or the sixth inorganic insulating layer may form an annular structure that covers the edge of the first contact pad metal layer.

[0153] Figure 13 is another schematic diagram of a local enlargement of region S1 in Figure 3. Figure 14A is a schematic diagram of the third gate metal layer in Figure 13. Figure 14B is a schematic diagram of the first gate metal layer in Figure 13. Figure 15 is a schematic diagram of a local cross-section along the R-R' direction in Figure 13. Figure 16 is another schematic diagram of a local cross-section along the P-P' direction in Figure 3.

[0154] In some examples, as shown in Figures 13 to 16, the multiple data leads 41 do not extend between adjacent contact pads 31, nor do they extend below the contact pads 31. The multiple data leads 41 are electrically connected to multiple access connection lines 44, and the multiple access connection lines 44 are electrically connected to multiple contact pads 31. The multiple data leads 41 can achieve electrical connection with multiple contact pads 31 via the multiple access connection lines 44.

[0155] In some examples, as shown in Figures 13 to 16, multiple data leads 41 may be located in the first gate metal layer, and multiple access connection lines 44 may be located in the third gate metal layer. For example, the orthographic projections of the access connection lines 44 and the data leads 41 at the base do not have to overlap. The data leads 41 may be electrically connected to the access connection lines 44 via a connecting electrode 45. For example, a connecting electrode 45 located in the first source-drain metal layer may have one end electrically connected to the data leads 41 located in the first gate metal layer via a plurality of first vias K1, and the other end electrically connected to the access connection lines 44 located in the third gate metal layer via a plurality of second vias K2.

[0156] In some examples, as shown in Figure 16, a single contact pad 31 may include four stacked contact pad metal layers, for example, a first contact pad metal layer 311, a second contact pad metal layer 312, a third contact pad metal layer 313, and a fourth contact pad metal layer 314, which are sequentially installed along the direction away from the base 10. The first contact pad metal layer 311 may be located on the third gate metal layer and may be an integrated structure connected to the connected access connection line 44. On the side of the first contact pad metal layer 311 closer to the base 10, a fifth inorganic insulating layer 105a, a fourth inorganic insulating layer 104a, a third inorganic insulating layer 103a, a second inorganic insulating layer 102a, and a first inorganic insulating layer 101a are sequentially installed along the direction closer to the base 10. The inorganic composite insulating layer in this example may include, for example, a fifth inorganic insulating layer 105a, a fourth inorganic insulating layer 104a, a third inorganic insulating layer 103a, a second inorganic insulating layer 102a, and a first inorganic insulating layer 101a. The orthographic projection of the inorganic composite insulating layer on the base 10 may cover the orthographic projection on the base 10 of the overlapping region of the four contact pad metal layers of the contact pad. The inorganic composite insulating layer may be partially installed in the gaps between adjacent contact pads. For example, the orthographic projection of the inorganic composite insulating layer on the base may overlap with the orthographic projection on the base of the access connection line. The inorganic composite insulating layer may be removed in the gaps between the contact pads and adjacent access connection lines, and in the gaps between adjacent access connection lines. The sides of the inorganic composite insulating layer are in contact with the second contact pad metal layer 312.

[0157] In some examples, as shown in Figure 16, the contact pad does not include a dead contact pad metal layer. However, this embodiment is not limited to this. In other examples, a dead contact pad metal layer that does not have an electrical connection relationship may be installed separately. For example, the dead contact pad metal layer may be located on the first gate metal layer or the second gate metal layer and used to increase the height of the contact pad.

[0158] In some examples, as shown in Figure 16, the second contact pad metal layer 312 may be in direct contact with the first contact pad metal layer 311. The sixth inorganic insulating layer in the first signal access region may be removed entirely.

[0159] In this example of a display panel, an inorganic composite insulating layer located below the first contact pad metal layer is used to improve the height of the contact pad, reduce the step difference between the contact pad and the surrounding film layer, improve the film layer cracking situation in the drive chip binding process, and increase the stability of the binding process and the yield rate of the product.

[0160] In this example of the display panel, the inorganic composite insulating layer is partially installed in the gaps between adjacent contact pads and is not integrally connected. In this way, it is possible to cut the pathways that would be created by the rupture of the inorganic film layer during the binding process of the drive chip, thereby preventing cracks.

[0161] The remaining structure of the display panel in this example can be found in the description of the above embodiment, so it will not be explained again here.

[0162] Figure 17 is another schematic diagram of a local cross-section along the P-P' direction in Figure 3. In some examples, as shown in Figure 17, one contact pad 31 may include four stacked contact pad metal layers, for example, a first contact pad metal layer 311, a second contact pad metal layer 312, a third contact pad metal layer 313, and a fourth contact pad metal layer 314, which are installed sequentially along the direction away from the base 10. The first contact pad metal layer 311 may be located on the third gate metal layer. The contact pad 31 in this example may not have any inactive contact pad metal layers.

[0163] In some examples, as shown in Figure 17, the inorganic composite insulating layer may include, for example, a fifth inorganic insulating layer 105a, a fourth inorganic insulating layer 104a, a third inorganic insulating layer 103a, a second inorganic insulating layer 102a, and a first inorganic insulating layer 101a. The orthographic projection of the inorganic composite insulating layer on the base 10 may cover the orthographic projection on the base 10 of the overlapping region of the four contact pad metal layers of the contact pad. The sides of the inorganic composite insulating layer are in contact with the first organic insulating layer 109a. A sixth inorganic insulating layer 106a may be installed between the second contact pad metal layer 312 and the first contact pad metal layer 311. The sixth inorganic insulating layer 106a may cover the edge of the first contact pad metal layer 311, and the first contact pad metal layer 311 may be electrically connected to the second contact pad metal layer 312 via vias opened in the sixth inorganic insulating layer 106a. For example, the sixth inorganic insulating layer 106a can protect the edge of the first contact pad metal layer 311 by covering it in an annular shape.

[0164] In this example, the display panel utilizes an inorganic composite insulating layer located beneath the first contact pad metal layer to increase the height of the contact pad, reduce the step difference between the contact pad and the surrounding film layer, improve the film layer crack situation during the drive chip binding process, and increase the stability of the binding process and the yield rate of the product. The sixth inorganic insulating layer can be used to cover and protect the edge of the first contact pad metal layer of the contact pad in an annular shape. In this example, the sixth inorganic insulating layer is partially installed in the gaps between adjacent contact pads and is not integrally connected. The inorganic composite insulating layer is also partially installed in the gaps between adjacent contact pads and is not integrally connected. In this way, the paths caused by the rupture of the inorganic film layer during the drive chip binding process can be cut off, and a crack prevention effect can be achieved.

[0165] The remaining structure of the display panel in this example can be found in the description of the above embodiment, so it will not be explained again here.

[0166] Figure 18 is another local schematic diagram of a signal access region according to at least one embodiment of the present disclosure. Figure 19 is a schematic diagram of the first gate metal layer in Figure 18. Figure 20 is a local cross-sectional schematic diagram along the V-V' direction in Figure 18.

[0167] In some examples, as shown in Figures 18 to 20, a single contact pad 31 may include four stacked contact pad metal layers, for example, a first contact pad metal layer 311, a second contact pad metal layer 312, a third contact pad metal layer 313, and a fourth contact pad metal layer 314. The first contact pad metal layer 311, the second contact pad metal layer 312, the third contact pad metal layer 313, and the fourth contact pad metal layer 314 may be installed sequentially along the direction away from the base 10. The first contact pad metal layer 311 may be located on the first gate metal layer, the second contact pad metal layer 312 may be located on the first source-drain metal layer, the third contact pad metal layer 313 may be located on the second source-drain metal layer, and the fourth contact pad metal layer 314 may be located on the second touch-conducting layer.

[0168] In some examples, as shown in Figure 19, the data lead wire 41 may extend between adjacent contact pads. The data lead wire 41 and the first contact pad metal layer 311 of the contact pad to which it is connected may be integrated into a single structure connected to each other.

[0169] In some examples, as shown in Figure 20, the second contact pad metal layer 312 may be connected to the first contact pad metal layer 311 via vias opened in the second inorganic insulating layer 102a. The orthographic projection of the base of the second contact pad metal layer 312 may cover the orthographic projection of the base of the first contact pad metal layer 311. The second inorganic insulating layer 102a may cover the edges of the first contact pad metal layer 311.

[0170] In this example, the third, fourth, fifth, and sixth inorganic insulating layers in the first signal access region may be completely removed. The inorganic composite insulating layer in this example may include the third, fourth, and fifth inorganic insulating layers.

[0171] In this example, by removing the third, fourth, fifth, and sixth inorganic insulating layers in the first signal access region, the step difference between the contact pad and the surrounding film layer is reduced, improving the film layer crack situation in the binding process of the drive chip, and increasing the stability of the binding process and the yield rate of the product.

[0172] The remaining structure of the display panel in this example can be found in the description of the above embodiment, so it will not be explained again here.

[0173] Figure 21 is a localized enlarged view of region S3 in Figure 18. Figure 22 is another schematic diagram of a localized cross-section along the V-V' direction in Figure 18.

[0174] In some examples, as shown in Figures 21 and 22, a single contact pad 31 may include four stacked contact pad metal layers, for example, a first contact pad metal layer 311, a second contact pad metal layer 312, a third contact pad metal layer 313, and a fourth contact pad metal layer 314. The first contact pad metal layer 311, the second contact pad metal layer 312, the third contact pad metal layer 313, and the fourth contact pad metal layer 314 may be installed sequentially along the direction away from the base 10. The first contact pad metal layer 311 may be located on the first gate metal layer, the second contact pad metal layer 312 may be located on the first source-drain metal layer, the third contact pad metal layer 313 may be located on the second source-drain metal layer, and the fourth contact pad metal layer 314 may be located on the second touch-conducting layer.

[0175] In some examples, as shown in Figure 22, a sixth inorganic insulating layer 106a, a fifth inorganic insulating layer 105a, a fourth inorganic insulating layer 104a, a third inorganic insulating layer 103a, and a second inorganic insulating layer 102a may be installed between the second contact pad metal layer 312 and the first contact pad metal layer 311. The second contact pad metal layer 312 may be connected to the first contact pad metal layer 311 via vias opened in the sixth inorganic insulating layer 106a, the fifth inorganic insulating layer 105a, the fourth inorganic insulating layer 104a, the third inorganic insulating layer 103a, and the second inorganic insulating layer 102a. The sixth inorganic insulating layer 106a, the fifth inorganic insulating layer 105a, the fourth inorganic insulating layer 104a, the third inorganic insulating layer 103a, and the second inorganic insulating layer 102a may cover the edges of the first contact pad metal layer 311. For example, the second inorganic insulating layer 102a may cover the gap between adjacent contact pads, and the sixth inorganic insulating layer 106a, fifth inorganic insulating layer 105a, fourth inorganic insulating layer 104a, and third inorganic insulating layer 103a may not be installed in the gap between adjacent contact pads. The sixth inorganic insulating layer 106a, fifth inorganic insulating layer 105a, fourth inorganic insulating layer 104a, and third inorganic insulating layer 103a may be stacked to form an annular structure that covers the edge of the first contact pad metal layer 311. In this example, the inorganic composite insulating layer may include the third inorganic insulating layer 103a, fourth inorganic insulating layer 104a, and fifth inorganic insulating layer 105a. The sides of the inorganic composite insulating layer are in contact with the first organic insulating layer 109a. In this example, the inorganic composite insulating layer may protect the edge of the first contact pad metal layer 311 by covering it in an annular shape, and the sixth inorganic insulating layer 106a may also protect the edge of the first contact pad metal layer 311 by covering it in an annular shape.

[0176] In some examples, the total thickness of the sixth inorganic insulating layer 106a, the fifth inorganic insulating layer 105a, and the fourth inorganic insulating layer 104a covering the edge of the first contact pad metal layer may be 4500 angstroms to 1 micron, for example, about 9000 angstroms. For example, the sixth inorganic insulating layer 106a, the fifth inorganic insulating layer 105a, and the fourth inorganic insulating layer 104a in the signal access area may be thinned to reduce the step between the contact pad and the surrounding film layer.

[0177] In this example of the display panel, the sixth inorganic insulating layer is partially installed in the gaps between adjacent contact pads and not connected as a whole, and the inorganic composite insulating layer is also partially installed in the gaps between adjacent contact pads and not connected as a whole. This cuts the path that would otherwise be created by the rupture of the inorganic film layer during the binding process of the drive chip, thereby preventing cracks.

[0178] The remaining structure of the display panel in this example can be found in the description of the above embodiment, so it will not be explained again here.

[0179] This embodiment further provides a display panel comprising a base, a display structure layer, a plurality of data leads, a plurality of contact pads, an inorganic composite insulating layer, and a first organic insulating layer. The base includes a display area and a signal access area located on at least one side of the display area. The display structure layer is located at the base of the display area and includes a plurality of subpixels and a plurality of data lines, the plurality of subpixels being electrically connected to the plurality of data lines, and the plurality of data lines being configured to provide data signals to the plurality of subpixels. The plurality of data leads are located in the signal access area and are electrically connected to the plurality of data lines. The plurality of contact pads are located in the signal access area and include a plurality of contact pad metal layers, at least one of the plurality of contact pads being electrically connected to each other, and the plurality of contact pad metal layers being electrically connected to one of the plurality of data leads. The inorganic composite insulating layer is located in the signal access area and is located on the side of at least one of the plurality of contact pad metal layers that is closer to the base. The first organic insulating layer is located in the signal access region, and the first organic insulating layer is located on the side away from the base of the inorganic composite insulating layer and at least one of the plurality of contact pad metal layers. The side of the inorganic composite insulating layer is in contact with the first organic insulating layer or one of the plurality of contact pad metal layers.

[0180] In some exemplary embodiments, the inorganic composite insulating layer is located on the side of the plurality of contact pad metal layers closer to the base, and the orthographic projection of the inorganic composite insulating layer on the base covers the orthographic projection of the overlapping region of the plurality of contact pad metal layers on the base.

[0181] In some exemplary embodiments, the at least one contact pad further includes an inactive contact pad metal layer, and the inorganic composite insulating layer is located between the plurality of contact pad metal layers of the at least one contact pad and the inactive contact pad metal layer.

[0182] The details of the display panel in this example can be found in the description of the above embodiment, so they will not be explained again here.

[0183] Figure 23 is a schematic diagram of a display device according to at least one embodiment of the present disclosure. As shown in Figure 23, this embodiment provides a display device 91 comprising a display panel 910 of the above embodiment. In some examples, the display panel 910 may be an OLED display panel with an integrated touch structure. The display device 91 may be a product or component having display and touch functions such as a mobile phone, tablet, television, monitor, laptop, digital frame, or navigator.

[0184] The drawings in this disclosure relate only to the structures relating to this disclosure; for other structures, conventional designs may be referenced. Where there is no conflict, new embodiments can be obtained by combining the embodiments and features of the embodiments in this disclosure. Modifications or equivalent substitutions can be made to the technical solutions of this disclosure without departing from the spirit and scope of the technical solutions of this disclosure, as can be understood by those skilled in the art. Any such modifications or equivalent substitutions should be included within the scope of the claims of this disclosure.

Claims

1. A display panel comprising a base, a display structure layer, multiple data lead wires, multiple contact pads, and an inorganic composite insulating layer, The base includes a display area and a signal access area located on at least one side of the display area. The display structure layer is located at the base of the display area, and the display structure layer includes a plurality of subpixels and a plurality of data lines, the plurality of subpixels are electrically connected to the plurality of data lines, and the plurality of data lines are configured to provide data signals to the plurality of subpixels. The plurality of data leads are located in the signal access area, and the plurality of data leads are connected to the plurality of data lines. The plurality of contact pads are located in the signal access area, and at least one of the plurality of contact pads includes a plurality of contact pad metal layers that are electrically connected to each other, and the plurality of contact pad metal layers are electrically connected to one of the plurality of data lead wires. The inorganic composite insulating layer is located in the signal access region, and the inorganic composite insulating layer is located on the side of at least one of the plurality of contact pad metal layers that is closer to the base. The display panel wherein the orthographic projections of the inorganic composite insulating layer and the plurality of contact pads on the base do not overlap, or the orthographic projections of the inorganic composite insulating layer and the at least one contact pad on the base overlap at least partially.

2. The display panel according to claim 1, wherein the inorganic composite insulating layer is located on the side of the plurality of contact pad metal layers that is closer to the base.

3. The display panel according to claim 2, wherein the orthographic projection of the inorganic composite insulating layer on the base covers the orthographic projection of the base in the overlapping region of the plurality of contact pad metal layers.

4. The display panel according to claim 2, characterized in that at least a portion of the inorganic composite insulating layer is located in the space between adjacent contact pads.

5. The display panel according to claim 2, wherein the at least one contact pad further comprises an inactive contact pad metal layer, and the inorganic composite insulating layer is located between the plurality of contact pad metal layers of the at least one contact pad and the inactive contact pad metal layer.

6. The display panel according to claim 5, wherein the orthographic projection of the inorganic composite insulating layer on the base covers the orthographic projection of the ineffective contact pad metal layer on the base.

7. The display panel according to any one of claims 2 to 6, wherein the at least one contact pad includes a first contact pad metal layer that contacts the surface of the inorganic composite insulating layer away from the base, and the first contact pad metal layer is electrically connected to a data lead wire.

8. The display panel according to claim 7, wherein the first contact pad metal layer and the one data lead wire are connected to each other in an integrated structure.

9. The system further comprises a plurality of access connection lines located in the aforementioned signal access area, The display panel according to claim 7, wherein the first contact pad metal layer is electrically connected to the data lead wire via a single access connection wire, and the first contact pad metal layer and the single access connection wire are connected to each other in an integrated structure.

10. The display panel according to claim 9, wherein the connection position between the access connection line and the data lead line is located on the side of the plurality of contact pads closest to the display area.

11. The system further comprises a plurality of connection electrodes located in the signal access region, The display panel according to claim 9 or 10, wherein the access connection line is electrically connected to the data lead line via the connecting electrode, the access connection line is located on the side of the data lead line away from the base, and the connecting electrode is located on the side of the access connection line away from the base.

12. At least one of the plurality of subpixels includes a pixel circuit, the pixel circuit includes at least one first transistor and at least one second transistor, the first transistor and the second transistor are of different types. The first transistor includes a first active layer and a first gate electrode. The second transistor includes a second active layer and a second gate electrode, the first active layer and first gate electrode of the first transistor are located on the side of the second active layer of the second transistor closer to the base, and the second gate electrode is located on the side of the second active layer further away from the base. A third gate insulating layer is provided between the second active layer and the second gate electrode. The display panel according to any one of claims 1 to 11, wherein the inorganic composite insulating layer includes at least a fifth inorganic insulating layer installed in the same layer as the third gate insulating layer.

13. The pixel circuit further includes at least one capacitor, the capacitor including a first plate and a second plate, the second plate located on the side of the first plate away from the base and the second plate located on the side of the second active layer of the second transistor closer to the base. A first interlayer insulating layer is provided between the second electrode plate and the second active layer of the second transistor. The display panel according to claim 12, wherein the inorganic composite insulating layer includes the fifth inorganic insulating layer and a third inorganic insulating layer installed on the same layer as the first interlayer insulating layer.

14. A first buffer layer is further provided between the second electrode plate and the second active layer of the second transistor, and the first interlayer insulating layer is located on the side of the first buffer layer closer to the base. The display panel according to claim 13, wherein the inorganic composite insulating layer includes the third inorganic insulating layer, the fifth inorganic insulating layer, and a fourth inorganic insulating layer installed on the same layer as the first buffer layer.

15. The display panel according to claim 12, wherein the at least one contact pad includes a first contact pad metal layer that contacts the surface of the inorganic composite insulating layer away from the base, and the first contact pad metal layer and the second gate electrode of the second transistor have the same layer structure.

16. The at least one contact pad further includes a second contact pad metal layer located on the side of the first contact pad metal layer away from the base, The display panel further comprises a sixth inorganic insulating layer, the sixth inorganic insulating layer located in the signal access region and on the side away from the base of the fifth inorganic insulating layer. The display panel according to claim 15, wherein the orthographic projections of the sixth inorganic insulating layer and the at least one contact pad on the base do not overlap, or the sixth inorganic insulating layer covers the edge of the first contact pad metal layer of the at least one contact pad, and the surface of the first contact pad metal layer exposed by the sixth inorganic insulating layer is in contact with the second contact pad metal layer.

17. The display panel according to claim 16, wherein a portion of the sixth inorganic insulating layer is installed in the space between adjacent contact pads.

18. The display panel according to claim 16, wherein the sixth inorganic insulating layer has an annular structure that covers the edge of the first contact pad metal layer.

19. The second transistor further includes a second source electrode and a second drain electrode, and a second interlayer insulating layer is provided between the second gate electrode of the second transistor and the second source electrode and the second drain electrode. The sixth inorganic insulating layer and the second interlayer insulating layer are installed in the same layer. The display panel according to claim 16, wherein the second contact pad metal layer and the second source electrode and second drain electrode of the second transistor have the same layer structure.

20. The at least one contact pad includes a first contact pad metal layer located on the side of the inorganic composite insulating layer closer to the base, and a second contact pad metal layer located on the side of the inorganic composite insulating layer away from the base, wherein the second contact pad metal layer is connected to the first contact pad metal layer. The display panel according to claim 1, wherein the inorganic composite insulating layer covers the edge of the first contact pad metal layer.

21. The display panel according to claim 20, wherein the inorganic composite insulating layer has an annular structure that covers the edge of the first contact pad metal layer.

22. The at least one subpixel further includes a light-emitting element, and the pixel circuit is electrically connected to the light-emitting element via a first relay electrode. The at least one contact pad includes a first contact pad metal layer, a second contact pad metal layer, and a third contact pad metal layer that are sequentially installed along a direction away from the base. The display panel according to any one of claims 12 to 21, wherein the third contact pad metal layer and the first relay electrode have the same layer structure.

23. The display structure layer further comprises a touch structure layer located on the side away from the base, the touch structure layer includes at least one touch conductive layer, The display panel according to claim 22, wherein the at least one contact pad further includes a fourth contact pad metal layer located on the side of the third contact pad metal layer away from the base, and the fourth contact pad metal layer and one touch conductive layer in the touch structure layer are of the same layer structure.

24. The display panel according to claim 22 or 23, wherein the side of the inorganic composite insulating layer is in contact with the second contact pad metal layer or the third contact pad metal layer.

25. The display panel according to any one of claims 1 to 24, further comprising a first organic insulating layer located in the signal access region and on the side away from the base of the inorganic composite insulating layer, wherein the side of the inorganic composite insulating layer is in contact with the first organic insulating layer.

26. A display device comprising a display panel according to any one of claims 1 to 25.

27. A method for manufacturing a display panel, A base is provided, the base includes a display area and a signal access area located on at least one side of the display area, This includes forming a display structure layer in the display area, and forming a plurality of data lead wires, a plurality of contact pads, and an inorganic composite insulating layer in the signal access area. The display structure layer includes a plurality of subpixels and a plurality of data lines, the plurality of subpixels are electrically connected to the plurality of data lines, the plurality of data lines are configured to provide data signals to the plurality of subpixels, the plurality of data leads are connected to the plurality of data lines, and at least one of the plurality of contact pads includes a plurality of contact pad metal layers that are electrically connected to each other, the plurality of contact pad metal layers are electrically connected to one of the plurality of data leads, A method for manufacturing a display panel, wherein the inorganic composite insulating layer is located on the side of at least one of the plurality of contact pad metal layers that is closer to the base, and the orthographic projections of the inorganic composite insulating layer and the plurality of contact pads on the base do not overlap, or the orthographic projections of the inorganic composite insulating layer and the at least one contact pad on the base overlap at least partially.

28. A display panel comprising a base, a display structure layer, multiple data lead wires, multiple contact pads, an inorganic composite insulating layer, and a first organic insulating layer, The base includes a display area and a signal access area located on at least one side of the display area. The display structure layer is located at the base of the display area, and the display structure layer includes a plurality of subpixels and a plurality of data lines, the plurality of subpixels are electrically connected to the plurality of data lines, and the plurality of data lines are configured to provide data signals to the plurality of subpixels. The plurality of data leads are located in the signal access area, and the plurality of data leads are electrically connected to the plurality of data lines. The plurality of contact pads are located in the signal access area, and at least one of the plurality of contact pads includes a plurality of contact pad metal layers that are electrically connected to each other, and the plurality of contact pad metal layers are electrically connected to one of the plurality of data lead wires. The inorganic composite insulating layer is located in the signal access region, and the inorganic composite insulating layer is located on the side of at least one of the plurality of contact pad metal layers that is closer to the base. The first organic insulating layer is located in the signal access region, and the first organic insulating layer is located on the side away from the base of at least one of the inorganic composite insulating layer and the plurality of contact pad metal layers. The display panel, wherein the side of the inorganic composite insulating layer is in contact with the first organic insulating layer or one of the plurality of contact pad metal layers.

29. The display panel according to claim 28, wherein the inorganic composite insulating layer is located on the side of the plurality of contact pad metal layers that is closer to the base, and the orthographic projection of the inorganic composite insulating layer on the base covers the orthographic projection on the base of the overlapping region of the plurality of contact pad metal layers.

30. The display panel according to claim 28, wherein the at least one contact pad further comprises an inactive contact pad metal layer, and the inorganic composite insulating layer is located between the plurality of contact pad metal layers of the at least one contact pad and the inactive contact pad metal layer.

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