P-type conductive ultrawide bandgap semiconductor, method for manufacturing the same, and method for using the same

Abstract

Disclosed herein are p-type conductive ultrawide bandgap semiconductors, methods for manufacturing the same, and methods for using the same. The ultrawide bandgap oxide semiconductor comprises MaGabOc, where M is Li or Na, and a, b, and c take selected values.

Description

[Technical Field]

[0001] Cross-reference of related applications This application claims priority to U.S. Provisional Application No. 63 / 466,812, filed on 16 May 2023, which is incorporated herein by reference in its entirety.

[0002] Description of government support This invention was made with government support under FA9950-23-1-0142, granted by the United States Air Force Office of Scientific Research. The United States Government reserves certain rights in this invention. [Background technology]

[0003] There is a need for ultrawide bandgap semiconductors with improved p-type conductivity. The compositions, methods, and devices disclosed herein address these and other requirements. [Overview of the project]

[0004] In accordance with the purpose of the compositions, methods, and devices disclosed, embodied, and broadly described herein, the subject matter of this disclosure is p-type conductive ultrawide bandgap semiconductors, methods for manufacturing the same, and methods for using the same.

[0005] For example, disclosed herein is M a Ga b O c The composition comprises an ultrawide bandgap oxide semiconductor having p-type conductivity, wherein M is Li or Na.

[0006] In some examples, the composition, M a Ga b O c This includes, where M is Li or Na, a is between 0 and 1, b is between 0 and 5, and c is between 2 and 8, provided that at least one of a or b is not 0.

[0007] In some examples, a is from 0 to 1 and b is from 0 to 1.

[0008] In some examples, a is from 0 to 1 and b is from 4 to 5.

[0009] In some examples, a is from 0 to 1 and c is 2.

[0010] In some examples, a is from 0 to 1 and c is 8.

[0011] In some examples, b is from 0 to 1 and c is 2.

[0012] In some examples, b is from 4 to 5 and c is 8.

[0013] In some examples, the composition is M a Ga b O8, where M is Li or Na, a is from 0 to 1, and b is from 4 to 5.

[0014] In some examples, the composition is M a Ga b O2, where M is Li or Na, a is from 0 to 1, b is from 0 to 1, provided that at least one of a or b is not 0.

[0015] In some examples, the composition is Li x Ga 1-x O2 or Na x Ga 1-x O2, where x is from 0 to 1, for example from 0 to 0.5.

[0016] In some examples, the composition is Li x Ga 1-x O2, where x is from 0 to 1, for example from 0 to 0.5. In some examples, the composition contains β-Li x Ga 1-x O2.

[0017] In some examples, Li and Ga have atomic ratios of 0 to 1.

[0018] In some examples, the composition further includes a dopant, for example, a p-type dopant. In some examples, the dopant is 1 × 10¹¹ per cubic centimeter. 15 ~1 × 10 21 cm -3 , 1 x 10 per cubic centimeter 15 ~1 × 10 19 cm -3 , or 1 × 10 16 ~5×10 17 cm -3 It has a concentration of [value].

[0019] In some examples, the composition has a mobility of, for example, 0.1 to 100 cm. 2 / Vs, for example, 1-10cm 2 / Vs (for example, 2-5cm) 2 It has a hole mobility of ( / Vs).

[0020] This specification also discloses devices comprising any of the compositions disclosed herein.

[0021] In some examples, the device further includes a substrate, on which the composition is deposited as a layer.

[0022] In some examples, the substrate includes LiGaO2, GaN on a c-plane sapphire template, on-axis c-sapphire, off-axis c-sapphire, Ga2O3, Si, or a combination thereof.

[0023] In some examples, the layers have a surface roughness with an RMS value of 15 nm or less, 10 nm or less, 5 nm or less, or 2.5 nm or less.

[0024] In some examples, the layer has an average thickness of 100–1000 nm. In some examples, the layer has an average thickness of 100–200 nm. In some examples, the layer has an average thickness of 500–1000 nm, for example, 700–800 nm.

[0025] In some examples, the devices include vertical PN diodes, MOSFET devices such as power MOSFETs or trench MOSFETs, MESFET devices, MODFET devices, current-aperture vertical electron transistor (CAVET) devices, or combinations thereof.

[0026] In some examples, the device includes a vertical power device.

[0027] In some examples, the device includes optical devices, electronic devices, optoelectronic devices, or combinations thereof.

[0028] In some examples, the device includes a diode.

[0029] In some examples, the device is n-Ga2O3 / pM a Ga b O c n-AlN / pM a Ga b O c n-BN / pM a Ga b O c n-GaN / pM a Ga b O c , or n-AlGaN / pM a Ga b O c This includes heterojunctions. In some examples, the device is n-Ga2O3 / p-Li a Ga b O c n-AlN / p-Li a Ga b O c n-BN / p-Li a Gab O c 、 n-GaN / p-Li a Ga b O c 、 or n-AlGaN / p-Li a Ga b O c includes a heterojunction of.

[0030] In some examples, the device is n-Ga2O3 / p-Li a Ga b O2, n-AlN / p-Li a Ga b O2, n-BN / p-Li a Ga b O2, n-GaN / p-Li a Ga b O2, or n-AlGaN / p-Li a Ga b O2 includes a heterojunction of. In some examples, the device is n-Ga2O3 / p-Li x Ga 1-x O2, n-AlN / p-Li x Ga 1-x O2, n-BN / p-Li x Ga 1-x O2, n-GaN / p-Li x Ga 1-x O2, or n-AlGaN / p-Li x Ga 1-x O2 includes a heterojunction of. In some examples, the device is n-Ga2O3 / p-Li x Ga 1-x O2 includes a heterojunction of.

[0031] In some examples, the device is n-Ga2O3 / p-Li a Ga b O8, n-AlN / p-Li a Ga b O8, n-BN / p-Li a Ga b O8, n-GaN / p-Li a Ga b O8, or n-AlGaN / p-Li a Ga bThis includes O8 heterojunctions. In some examples, the device includes an n-Ga2O3 / p-LiGa5O8 heterojunction.

[0032] This specification also discloses methods of using any of the compositions disclosed herein.

[0033] This specification also discloses methods for producing any of the compositions disclosed herein. For example, the method may involve contacting a gallium-containing precursor with a lithium or sodium-containing precursor at a predetermined temperature in the presence of oxygen or an oxygen-containing precursor, thereby reacting the gallium-containing precursor, the lithium or sodium-containing precursor, and the oxygen or oxygen-containing precursor to form a composition. In some examples, the method may involve contacting a gallium-containing precursor with a lithium-containing precursor at a predetermined temperature in the presence of oxygen or an oxygen-containing precursor, thereby reacting the gallium-containing precursor, the lithium-containing precursor, and the oxygen or oxygen-containing precursor to form a composition.

[0034] In some examples, the gallium-containing precursor includes Ga(acac)3([CH3COCH=C(O-)CH3]3Ga), trimethylgallium (TMGa), triethylgallium (TEGa), or a combination thereof. In some examples, the gallium-containing precursor includes Ga(acac)3([CH3COCH=C(O-)CH3]3Ga).

[0035] In some cases, the sodium-containing precursor is sodium acetoacetate (C4H5NaO3), tert-butoxide sodium (NaO3). t This includes Bu), sodium hexamethyldisilazide (NaHMDS), sodium 2,2,6,6-tetramethyl-3,5-heptanedionate (NaTMHD), or a combination thereof.

[0036] In some cases, lithium-containing precursors include lithium acetoacetate (C4H5LiO3), tert-butoxide lithium (LiO3), and others. tThis includes lithium (Bu), lithium hexamethyldisilazide (LiHMDS), lithium 2,2,6,6-tetramethyl-3,5-heptanedionate (LiTMHD), or combinations thereof. In some examples, the lithium-containing precursor includes lithium acetoacetate (C4H5LiO3).

[0037] In some examples, the gallium-containing precursor and / or the lithium or sodium-containing precursor each independently contain a fluid.

[0038] In some examples, gallium-containing precursors and / or lithium or sodium-containing precursors are supplied independently with a carrier gas. In some examples, the carrier gas includes argon, helium, N2, or a combination thereof. In some examples, the carrier gas includes argon.

[0039] In some examples, the temperature ranges are 600°C to 1100°C, 600°C to 1000°C, 800°C to 1000°C, or 800°C to 950°C.

[0040] In some examples, the method includes metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), pulsed laser deposition (PLD), low-pressure chemical vapor deposition (LPCVD), mist CVD, or a combination thereof. In some examples, the method includes mist CVD.

[0041] In some examples, the method involves depositing a composition onto a substrate. In some examples, the substrate includes LiGaO2, GaN on a c-plane sapphire template, on-axis c-sapphire, off-axis c-sapphire, Ga2O3, Si, or a combination thereof.

[0042] Additional advantages of the disclosed compositions, devices, and methods are shown in part in the following description, and some may be obvious from the description. The advantages of the disclosed compositions, devices, and methods will be realized and achieved by the elements and combinations thereof specifically shown in the appended claims. It should be understood that both the above general description and the following detailed description are illustrative and explanatory, and do not limit the disclosed devices and methods as claimed.

[0043] Details of one or more embodiments of the present invention are shown in the accompanying drawings and the following description. Other characteristics, purposes, and advantages of the present invention will become apparent from the description and drawings, as well as from the claims.

[0044] The accompanying drawings are incorporated herein and constitute part thereof, illustrating several aspects of this disclosure and serving to illustrate the principles of this disclosure together with the description. [Brief explanation of the drawing]

[0045] [Figure 1A] This is a planar SEM image of a LiGaO2 sample grown on GaN on a sapphire template at a growth temperature (TG) of 800°C. [Figure 1B] This is a planar SEM image of a LiGaO2 sample grown on GaN on a sapphire template at a growth temperature (TG) of 850°C. [Figure 1C] This is a planar SEM image of a LiGaO2 sample grown on GaN on a sapphire template at a growth temperature (TG) of 900°C. [Figure 1D] This is a planar SEM image of a LiGaO2 sample grown on GaN on a sapphire template at a growth temperature (TG) of 950°C. [Figure 2A] This is a 5 μm × 5 μm AFM image of a LiGaO2 sample grown on GaN on a sapphire template at a growth temperature (TG) of 800°C. The RMS of the sample was approximately 3.45 nm. [Figure 2B]This is a 5 μm × 5 μm AFM image of a LiGaO2 sample grown on GaN on a sapphire template at a growth temperature (TG) of 850°C. The RMS of the sample was approximately 6.43 nm. [Figure 2C] This is a 5 μm × 5 μm AFM image of a LiGaO2 sample grown on GaN on a sapphire template at a growth temperature (TG) of 900°C. The sample's RMS was approximately 1.60 nm. [Figure 2D] This is a 5 μm × 5 μm AFM image of a LiGaO2 sample grown on GaN on a sapphire template at a growth temperature (TG) of 950°C. The RMS of the sample was approximately 2.46 nm. [Figure 3] This is a cross-sectional SEM image of a LiGaO2 sample grown on GaN on a sapphire template at 900°C. [Figure 4] This is an XRD 2θ-ω scan of a LiGaO2 sample grown on GaN on a sapphire template at 900°C. [Figure 5A] This is a planar SEM image of a LiGaO2 sample grown on an on-axis c-sapphire substrate at 850°C. [Figure 5B] This is a planar SEM image of a LiGaO2 sample grown on a 6° off-cut c-sapphire substrate at 850°C. [Figure 5C] This is a 5 μm × 5 μm AFM image of a LiGaO2 sample grown on an on-axis c-sapphire substrate at 850°C. The RMS of the sample was approximately 12.1 nm. [Figure 5D] This is a 5 μm × 5 μm AFM image of a LiGaO2 sample grown on a 6° off-cut c-sapphire substrate at 850°C. The sample's RMS was approximately 1.48 nm. [Figure 6A] This is a 5 μm × 5 μm AFM image of a LiGaO2 sample grown on a (010)Ga2O3 substrate at 850°C. The RMS of the sample was approximately 7.16 nm. [Figure 6B] This is a 5 μm × 5 μm AFM image of a LiGaO2 sample grown on a (001)Ga2O3 substrate at 850°C. This is a planar SEM image of the LiGaO2 sample. The RMS of the sample was approximately 4.23 nm. [Figure 7] This is an XPS spectrum of the Li 1s, Ga 2p, and O 1s peaks obtained from a LiGaO2 film grown on GaN on a sapphire template at 900°C. [Figure 8A] This is an exemplary design structure for a p-LiGaO2 / n-β-Ga2O3 heterojunction PN diode. [Figure 8B] This is an exemplary design structure for a LiGaO2-Ga2O3 power MOSFET. [Figure 8C] This is an exemplary design structure for a LiGaO2-Ga2O3 trench MOSFET. [Figure 8D] This is an exemplary design structure for a LiGaO2-Ga2O3 CAVET. [Figure 9A] This is a planar SEM image of a LiGa5O8 sample grown on GaN on a sapphire template at a growth temperature (TG) of 800°C. [Figure 9B] This is a planar SEM image of a LiGa5O8 sample grown on GaN on a sapphire template at a growth temperature (TG) of 850°C. [Figure 9C] This is a planar SEM image of a LiGa5O8 sample grown on GaN on a sapphire template at a growth temperature (TG) of 900°C. [Figure 9D] This is a planar SEM image of a LiGa5O8 sample grown on GaN on a sapphire template at a growth temperature (TG) of 950°C. [Figure 10A] This is a 5 μm × 5 μm AFM image of a LiGa5O8 sample grown on GaN on a sapphire template at a growth temperature (TG) of 800°C. [Figure 10B] This is a 5 μm × 5 μm AFM image of a LiGa5O8 sample grown on GaN on a sapphire template at a growth temperature (TG) of 850°C. [Figure 10C] This is a 5 μm × 5 μm AFM image of a LiGa5O8 sample grown on GaN on a sapphire template at a growth temperature (TG) of 900°C. [Figure 10D]This is a 5 μm × 5 μm AFM image of a LiGa5O8 sample grown on GaN on a sapphire template at a growth temperature (TG) of 950°C. [Figure 11A] This is a cross-sectional TEM image of a LiGa5O8 sample grown on GaN on a sapphire template at 900°C. The interface is indicated by a dashed line. [Figure 11B] This is an atomic-resolution HAADF STEM image of a LiGa5O8 sample grown on GaN on a sapphire template at 900°C. The interface is indicated by a dashed line. [Figure 12] This is an XRD 2θ-ω scan of a LiGa5O8 sample grown on GaN on a sapphire template at 900°C. [Figure 13A] This is a planar SEM image of a LiGa5O8 sample grown on an on-axis c-sapphire substrate at 850°C. [Figure 13B] This is a planar SEM image of a LiGa5O8 sample grown on a 6° off-cut c-sapphire substrate at 850°C. [Figure 13C] This is a 5 μm × 5 μm AFM image of a LiGa5O8 sample grown on an on-axis c-sapphire substrate at 850°C. [Figure 13D] This is a 5 μm × 5 μm AFM image of a LiGa5O8 sample grown on a 6° off-cut c-sapphire substrate at 850°C. [Figure 14A] This is a cross-sectional TEM image of a LiGa5O8 sample grown on an on-axis c-sapphire substrate at 850°C. The interface is indicated by a dashed line. [Figure 14B] This is an atomic-resolution HAADF STEM image of a LiGa5O8 sample grown on an on-axis c-sapphire substrate at 850°C. The interface is indicated by a dashed line. [Figure 15] These are XPS spectra of the (a) Li 1s, (b) Ga 3s, and (c) O 1s peaks obtained from a LiGa5O8 film grown on GaN on a sapphire template at 900°C. [Figure 16A]This is a proposed design structure for a vertical PN diode based on an n-Ga2O3 drift layer, an n+-Ga2O3 substrate, and a p-LiGa5O8 layer. [Figure 16B] This is the proposed design structure for a LiGa5O8-Ga2O3 MOSFET. [Figure 16C] This is the proposed design structure for a LiGa5O8-Ga2O3 trench MOSFET. [Figure 16D] This is a proposed design structure for a LiGa5O8-Ga2O3 current-aperture vertical electron transistor (CAVET). [Modes for carrying out the invention]

[0046] The compositions, methods, and devices described herein may be more readily understood by referring to the detailed descriptions of specific aspects of the disclosed subject matter and the examples contained herein.

[0047] Before the compositions, methods, and devices of the present invention are disclosed or described, it should be understood that the embodiments described below are not limited to specific synthesis methods or specific reagents, and that these may be modified. It should also be understood that the terms used herein are used solely to describe specific embodiments and are not intended to be limiting.

[0048] Furthermore, various publications are referenced throughout this specification. The disclosures of those publications as a whole are incorporated herein by reference to more completely explain the current art to which the subject matter of this disclosure pertains. It should be understood that each disclosed reference is also incorporated herein as a reference to its own specific and individual content, and that this applies to the content discussed in the texts on which each reference is based.

[0049] In this specification and the subsequent claims, several terms are referenced and defined as having the meanings set forth below.

[0050] Throughout this description and the claims, the word “comprise” and other forms thereof, such as “comprising” and “comprises,” mean “including but not limited to,” and are not intended to exclude, for example, other appendages, components, integers, or steps.

[0051] As used herein and in the appended claims, the singular forms "a," "an," and "the" include multiple references unless the context clearly indicates otherwise. Thus, for example, a reference to "composition" includes mixtures of two or more such compositions; a reference to "agent" includes mixtures of two or more such agents; a reference to "component" includes mixtures of two or more such components, and so on.

[0052] "Optional" or "optional" means that the event or situation described later may or may not occur, and that the description includes both examples in which the event or situation occurs and examples in which it does not occur.

[0053] A range may be expressed herein as "approximately" from a certain value and / or "approximately" to another specific value. "Approximately" means within 5% of a value, for example, within 4, 3, 2, or 1% of the value. Where such a range is expressed, another aspect includes from a certain value and / or to another specific value. Similarly, when a value is expressed as an approximation using the preceding "approximately," it will be understood that a particular value forms another aspect. It should be further understood that each endpoint of a range is important both in relation to and independently of the other endpoints.

[0054] In this specification, values ​​may be expressed as "mean" values. "Mean" generally refers to the statistical mean.

[0055] "Effectively" means within 5%, for example, within 4%, 3%, 2%, or 1%.

[0056] "Exemplary" means "an example of ~" and is not intended to indicate a preferred or ideal embodiment. "Such as" is used for explanatory purposes, not in a restrictive sense.

[0057] Throughout this specification, it should be understood that the identifiers “First” and “Second” are used simply to facilitate the distinction between the various components and steps of the disclosed subject matter. The identifiers “First” and “Second” are not intended to indicate any particular order, quantity, priority, or importance of the components or steps to which these terms are applied.

[0058] In this specification and the concluding claims, any reference to parts by weight of a particular element or component in a composition indicates a weight relationship between the element or component in the composition or article in which the parts by weight are expressed and any other element or component. Thus, in a compound containing 2 parts by weight of component X and 5 parts by weight of component Y, X and Y are present in a weight ratio of 2:5, and in such a ratio whether or not further components are present in the compound.

[0059] The weight percentage (W%) of a component is based on the total weight of the preparation or composition containing that component, unless otherwise specified.

[0060] As used herein, the term "or combinations thereof" refers to all permutations and combinations of the listed items preceding that term. For example, "A, B, C, or combinations thereof" is intended to include at least one of A, B, C, AB, AC, BC, or ABC, and, where order is important in a particular context, BA, CA, CB, CBA, BCA, ACB, BAC, or CAB. Continuing with this example, combinations that include repetitions of one or more items or terms such as BB, AAA, AB, BBC, AAABCCCC, CBBAAA, CABABB are explicitly included. One of ordinary skill in the art will understand that, typically, there is no limit to the number of items or terms in any combination, unless otherwise apparent from the context.

[0061] This specification discloses p-type conductive ultra-wide bandgap semiconductors, methods of manufacturing them, and methods of using them.

[0062] For example, in this specification, M a Ga b O c A composition comprising a p-type conductive ultra-wide bandgap oxide semiconductor containing M is disclosed, where M is Li or Na.

[0063] In some examples, the composition contains M a Ga b O c where M is Li or Na, a is from 0 to 1, b is from 0 to 5, c is from 2 to 8, provided that at least one of a or b is not 0.

[0064] For example, a can be 0 or greater (e.g., 0.05 or greater, 0.1 or greater, 0.15 or greater, 0.2 or greater, 0.25 or greater, 0.3 or greater, 0.35 or greater, 0.4 or greater, 0.45 or greater, 0.5 or greater, 0.55 or greater, 0.6 or greater, 0.65 or greater, 0.7 or greater, 0.8 or greater, 0.85 or greater, or 0.9 or greater). In some examples, a can be 1 or less (e.g., 0.95 or less, 0.9 or less, 0.85 or less, 0.8 or less, 0.75 or less, 0.7 or less, 0.65 or less, 0.6 or less, 0.55 or less, 0.5 or less, 0.45 or less, 0.4 or less, 0.35 or less, 0.3 or less, 0.25 or less, 0.2 or less, 0.15 or less, or 0.1 or less). The range of a's value can be any of the minimum and maximum values ​​listed above. For example, a can be between 0 and 1 (e.g., 0 to 0.5, 0.5 to 1, 0 to 0.2, 0.2 to 0.4, 0.4 to 0.6, 0.6 to 0.8, 0.8 to 1, 0 to 0.9, 0 to 0.8, 0 to 0.7, 0 to 0.6, 0 to 0.4, 0 to 0.3, or 0 to 0.1).

[0065] In some examples, b is greater than or equal to 0 (for example, 0.05 or greater, 0.1 or greater, 0.15 or greater, 0.2 or greater, 0.25 or greater, 0.3 or greater, 0.35 or greater, 0.4 or greater, 0.45 or greater, 0.5 or greater, 0.55 or greater, 0.6 or greater, 0.65 or greater, 0.7 or greater, 0.8 or greater, 0.85 or greater, 0.9 or greater, 1 or greater, 1.1 or greater, 1.2 or greater, 1.3 or greater, 1.4 or greater, 1.5 or greater, 1.6 or greater, 1.7 or greater, 1.8 or greater, 1. (9 or higher, 2 or higher, 2.1 or higher, 2.2 or higher, 2.3 or higher, 2.4 or higher, 2.5 or higher, 2.6 or higher, 2.7 or higher, 2.8 or higher, 2.9 or higher, 3 or higher, 3.1 or higher, 3.2 or higher, 3.3 or higher, 3.4 or higher, 3.5 or higher, 3.6 or higher, 3.7 or higher, 3.8 or higher, 3.9 or higher, 4 or higher, 4.1 or higher, 4.2 or higher, 4.3 or higher, 4.4 or higher, 4.5 or higher, 4.6 or higher, 4.7 or higher, 4.8 or higher, or 4.9 or higher) may be. In some examples, b is 5 or less (for example, 4.9 or less, 4.8 or less, 4.7 or less, 4.6 or less, 4.5 or less, 4.4 or less, 4.3 or less, 4.2 or less, 4.1 or less, 4 or less, 3.9 or less, 3.8 or less, 3.7 or less, 3.6 or less, 3.5 or less, 3.4 or less, 3.3 or less, 3.2 or less, 3.1 or less, 3 or less, 2.9 or less, 2.8 or less, 2.7 or less, 2.6 or less, 2.5 or less, 2.4 or less, 2.3 or less, 2.1 or less, 2 The following are possible values ​​for b: 1.9 or less, 1.8 or less, 1.7 or less, 1.6 or less, 1.5 or less, 1.4 or less, 1.3 or less, 1.2 or less, 1.1 or less, 1 or less, 0.95 or less, 0.9 or less, 0.85 or less, 0.8 or less, 0.75 or less, 0.7 or less, 0.65 or less, 0.6 or less, 0.55 or less, 0.5 or less, 0.45 or less, 0.4 or less, 0.35 or less, 0.3 or less, 0.25 or less, 0.2 or less, 0.15 or less, or 0.1 or less. The range of b is possible between any of the minimum and maximum values ​​listed above. For example, b can be between 0 and 5 (e.g., 0 to 2.5, 2.5 to 5, 0 to 1, 1 to 2, 2 to 3, 3 to 4, 4 to 50, 0 to 4, 0 to 3, 0 to 2, 1 to 5, 2 to 5, 3 to 5, 0.1 to 4.9, 0.5 to 4.5, or 1 to 4).

[0066] In some cases, a can be between 0 and 1, and b can be between 0 and 1. In some cases, a can be between 0 and 1, and b can be between 4 and 5.

[0067] In some examples, c is greater than or equal to 0 (for example, 0.05 or greater, 0.1 or greater, 0.15 or greater, 0.2 or greater, 0.25 or greater, 0.3 or greater, 0.35 or greater, 0.4 or greater, 0.45 or greater, 0.5 or greater, 0.55 or greater, 0.6 or greater, 0.65 or greater, 0.7 or greater, 0.8 or greater, 0.85 or greater, 0.9 or greater, 1 or greater, 1.1 or greater, 1.2 or greater, 1.3 or greater, 1.4 or greater, 1.5 or greater, 1.6 or greater, 1.7 or greater, 1.8 or greater, 1.9 or greater, 2 or greater, 2.1 or greater, 2.2 or greater, 2.3 or greater, 2.4 or greater, 2.5 or greater, 2.6 or greater, 2.7 or greater, 2.8 or greater, 2.9 or greater, 3 or greater, 3.1 or greater, 3.2 or greater, 3.3 or greater, 3.4 or higher, 3.5 or higher, 3.6 or higher, 3.7 or higher, 3.8 or higher, 3.9 or higher, 4 or higher, 4.1 or higher, 4.2 or higher, 4.3 or higher, 4.4 or higher, 4.5 or higher, 4.6 or higher, 4.7 or higher, 4.8 or higher, 4.9 or higher, 5 or higher, 5.1 or higher, 5.2 or higher, 5.3 or higher, 5.4 or higher, 5.5 or higher, 5.6 or higher, 5.7 or higher, 5.8 or higher, 5.9 or higher, 6 or higher, 6.1 or higher, 6.2 or higher, 6.3 or higher, 6.4 or higher, 6.5 or higher, 6.6 or higher, 6.7 or higher, 6.8 or higher, 6.9 or higher, 7 or higher, 7.1 or higher, 7.2 or higher, 7.3 or higher, 7.4 or higher, 7.5 or higher, 7.6 or higher, 7.7 or higher, or 7.8 or higher) may be.In some examples, c is 8 or less (for example, 7.9 or less, 7.8 or less, 7.7 or less, 7.6 or less, 7.5 or less, 7.4 or less, 7.3 or less, 7.2 or less, 7.1 or less, 7 or less, 6.9 or less, 6.8 or less, 6.7 or less, 6.6 or less, 6.5 or less, 6.4 or less, 6.3 or less, 6.2 or less, 6.1 or less, 6 or less, 5.9 or less, 5.8 or less, 5.7 or less, 5.6 or less, 5.5 or less, 5.4 or less, 5.3 or less, 5.2 or less, 5.1 or less, 5 or less, 4.9 or less, 4.8 or less, 4.7 or less, 4.6 or less, 4.5 or less, 4.4 or less, 4.3 or less, 4.2 or less, 4.1 or less, 4 or less, 3.9 or less, 3.8 or less, 3.7 or less, 3 The range of c is 0.6 or less, 3.5 or less, 3.4 or less, 3.3 or less, 3.2 or less, 3.1 or less, 3 or less, 2.9 or less, 2.8 or less, 2.7 or less, 2.6 or less, 2.5 or less, 2.4 or less, 2.3 or less, 2.1 or less, 2 or less, 1.9 or less, 1.8 or less, 1.7 or less, 1.6 or less, 1.5 or less, 1.4 or less, 1.3 or less, 1.2 or less, 1.1 or less, 1 or less, 0.95 or less, 0.9 or less, 0.85 or less, 0.8 or less, 0.75 or less, 0.7 or less, 0.65 or less, 0.6 or less, 0.55 or less, 0.5 or less, 0.45 or less, 0.4 or less, 0.35 or less, 0.3 or less, 0.25 or less, 0.2 or less, 0.15 or less, or 0.1 or less. The range of c can be any of the minimum and maximum values ​​listed above. For example, c can be anywhere from 0 to 8 (e.g., 0 to 4, 4 to 8, 0 to 2, 2 to 4, 4 to 6, 6 to 8, 0 to 6, 0 to 4, 2 to 8, 4 to 8, 1 to 7, or 2 to 6). In some examples, c is 2. In some examples, c is 8.

[0068] In some examples, a is between 0 and 1, and c is 2. In some examples, a is between 0 and 1, and c is 8.

[0069] In some examples, b is between 0 and 1, and c is 2. In some examples, b is between 4 and 5, and c is 8.

[0070] In some examples, a is between 0 and 1, b is between 0 and 1, and c is 2. In some examples, a is between 0 and 1, b is between 4 and 5, and c is 8.

[0071] For example, the compositions disclosed herein are M a Ga b It contains O8, where M is Li or Na, a is 0-1, and b is 4-5.

[0072] In some examples, the composition, M a Ga b It contains O2, where M is Li or Na, a is between 0 and 1, and b is between 0 and 1, provided that at least one of a or b is not 0.

[0073] For example, the compositions disclosed herein are ultrawide bandgap oxide semiconductors having p-type conductivity, and Li x Ga 1-x O2 or Na x Ga 1-x It contains O2, where x is between 0 and 1. In some examples, the composition is Na x Ga 1-x Contains O2. In some examples, the composition contains Li x Ga 1-x It contains O2, where x is between 0 and 1. In some examples, the composition is β-Li x Ga 1-x Contains O2.

[0074] For example, x can be 0 or greater (e.g., 0.05 or greater, 0.1 or greater, 0.15 or greater, 0.2 or greater, 0.25 or greater, 0.3 or greater, 0.35 or greater, 0.4 or greater, 0.45 or greater, 0.5 or greater, 0.55 or greater, 0.6 or greater, 0.65 or greater, 0.7 or greater, 0.8 or greater, 0.85 or greater, or 0.9 or greater). In some examples, x can be 1 or less (e.g., 0.95 or less, 0.9 or less, 0.85 or less, 0.8 or less, 0.75 or less, 0.7 or less, 0.65 or less, 0.6 or less, 0.55 or less, 0.5 or less, 0.45 or less, 0.4 or less, 0.35 or less, 0.3 or less, 0.25 or less, 0.2 or less, 0.15 or less, or 0.1 or less). The range of x can be any of the minimum and maximum values ​​listed above. For example, x can be in the range of 0 to 1 (e.g., 0 to 0.5, 0.5 to 1, 0 to 0.2, 0.2 to 0.4, 0.4 to 0.6, 0.6 to 0.8, 0.8 to 1, 0 to 0.9, 0 to 0.8, 0 to 0.7, 0 to 0.6, 0 to 0.4, 0 to 0.3, or 0 to 0.1). In some examples, the composition is Li x Ga 1-x O2 (for example, β-Li x Ga 1-x The material contains an ultrawide bandgap oxide semiconductor with p-type conductivity, including O2, where x is between 0 and 0.5.

[0075] In some cases, the atomic ratio of Li to Ga is between 0 and 1. For example, the atomic ratio of Li to Ga may be greater than or equal to 0 (e.g., 0.05 or greater, 0.1 or greater, 0.15 or greater, 0.2 or greater, 0.25 or greater, 0.3 or greater, 0.35 or greater, 0.4 or greater, 0.45 or greater, 0.5 or greater, 0.55 or greater, 0.6 or greater, 0.65 or greater, 0.7 or greater, 0.8 or greater, 0.85 or greater, or 0.9 or greater). In some cases, the atomic ratio of Li to Ga may be less than or equal to 1 (e.g., 0.95 or less, 0.9 or less, 0.85 or less, 0.8 or less, 0.75 or less, 0.7 or less, 0.65 or less, 0.6 or less, 0.55 or less, 0.5 or less, 0.45 or less, 0.4 or less, 0.35 or less, 0.3 or less, 0.25 or less, 0.2 or less, 0.15 or less, or 0.1 or less). The range of the Li-Ga atomic ratio can be anywhere between any of the minimum and maximum values ​​listed above. For example, the Li-Ga atomic ratio can be 0-1 (e.g., 0-0.5, 0.5-1, 0-0.2, 0.2-0.4, 0.4-0.6, 0.6-0.8, 0.8-1, 0-0.9, 0-0.8, 0-0.7, 0-0.6, 0-0.4, 0-0.3, 0-0.1, 0.1-1, 0.2-1, 0.3-1, 0.4-1, 0.6-1, 0.7-1, 0.9-1, 0.1-0.9, or 0.2-0.8). In some examples, the Li-Ga atomic ratio is 0.1-0.3.

[0076] In some examples, the composition further comprises a dopant such as a p-type dopant. In some examples, the concentration of the dopant is 1 × 10⁻⁶. 15 Every cubic centimeter (cm) -3 ) or more (for example, 5 x 10 15 cm -3 The above is 1 x 10 16 cm -3 The above 5 x 10 16 cm - 3 The above is 1 x 10 17 cm -3 The above 5 x 10 17 cm -3 The above is 1 x 10 18 cm -3 The above 5 x 10 18 cm -3 The above is 1 x 10 19 cm-3 The above 5 x 10 19 cm -3 The above is 1 x 10 20 cm -3 Above, or 5 x 10 20 cm -3 (The above.) In some cases, the dopant concentration is 1 × 10⁻⁶. 21 cm -3 For example, 5 x 10 20 cm -3 Below, 1 x 10 20 cm -3 Below, 5 x 10 19 cm -3 Below, 1 x 10 19 cm -3 Below, 5 x 10 18 cm -3 Below, 1 x 10 18 cm -3 Below, 5 x 10 17 cm -3 Below, 1 x 10 17 cm -3 Below, 5 x 10 16 cm -3 Below, 1 x 10 15 cm -3 The following, or 5 x 10 15 cm -3 The following applies: The range of dopant concentrations can be between any of the minimum and maximum values ​​listed above. For example, the dopant concentration may be 1 × 10⁻⁶. 15 Every cubic centimeter (cm) -3 )~1×10 21 cm -3 (For example, 1 × 10 15 ~1 × 10 17 cm -3 , 1 x 10 17 ~1 × 10² 1 cm -3 , 1 x 10 15 ~1 × 10 17 cm -3 , 1 x 10 17 ~1 × 10 19 cm -3 , 1 x 10 19 cm -3 ~1 × 10 21 cm -3 , 1 x 10 15~1 × 10 16 cm -3 , 1 x 10 16 ~1 × 10 17 cm -3 , 1 x 10 17 ~1 × 10 18 cm -3 , 1 x 10 18 ~1 × 10 19 cm -3 , 1 x 10 19 ~1 × 10 20 cm -3 , 1 x 10 20~ 1 x 10 21 cm -3 , 1 x 10 15 ~1 × 10 20 cm -3 , 1 x 10 15 ~1 × 10 19 cm -3 , 1 x 10 15 ~1 × 10 18 cm -3 , 1 x 10 16 ~1 × 10 21 cm -3 , 1 x 10 17 ~1 × 10 21 cm -3 , 1 x 10 18 ~1 × 10 21 cm -3 , 1 x 10 16 ~1 × 10 20 cm -3 , 1 x 10 16 ~1 × 10 19 cm -3 , 1 x 10 16 ~1 × 10 18 cm -3 , or 1 × 10 16 ~5×10 17 cm -3 ) can be. In some cases, the dopant concentration is 1 × 10⁻⁶. 15 Every cubic centimeter (cm) -3 )~1×10 19 cm -3 In some cases, the dopant concentration is 1 × 10⁻⁶. 16 ~5×10 17 cm -3 That is the case.

[0077] In some examples, the composition has a mobility, for example, a hole mobility of 0.1 cm. 2 / Vs or greater (for example, 0.25cm) 2 / Vs or more, 0.5cm 2 / Vs or more, 0.75cm 2 / Vs or more, 1cm 2 / Vs or more, 1.5cm 2 / Vs or more, 2cm 2 / Vs or more, 2.5cm 2 / Vs or more, 3cm 2 / Vs or more, 3.5cm 2 / Vs or more, 4cm 2 / Vs or more, 4.5cm 2 / Vs or more, 5cm 2 / Vs or more, 5.5cm 2 / Vs or more, 6cm 2 / Vs or more, 6.5cm 2 / Vs or more, 7cm 2 / Vs or more, 7.5cm 2 / Vs or more, 8cm 2 / Vs or more, 8.5cm 2 / Vs or more, 9cm 2 / Vs or more, 10cm 2 / Vs or more, 11cm 2 / Vs or more, 12cm 2 / Vs or more, 13cm 2 / Vs or more, 14cm 2 / Vs or more, 15cm 2 / Vs or more, 20cm 2 / Vs or more, 25cm 2 / Vs or more, 30cm 2 / Vs or more, 35cm 2 / Vs or more, 40cm 2 / Vs or more, 45cm 2 / Vs or more, 50cm 2 / Vs or more, 55cm 2 / Vs or more, 60cm 2 / Vs or more, 65cm 2 / Vs or more, 70cm 2 / Vs or more, 75cm 2 / Vs or more, 80cm 2 / Vs or more, 85cm 2 / Vs or above, または90cm 2 / Vs or above)である.いくつかの Example において, Composition は, Movement, Example えば Positive hole movement が100cm 2 / Vs or less (for example, えば, 95cm 2 / Vs below, 90cm 2 / Vs below, 85cm 2 / Vs below, 80cm 2 / Vs below, 75cm 2 / Vs below, 70cm 2 / Vs below, 65cm 2 / Vs below, 60cm 2 / Vs below, 55cm 2 / Vs below, 50cm 2 / Vs below, 45cm 2 / Vs below, 40cm 2 / Vs below, 35cm 2 / Vs below, 30cm 2 / Vs below, 25cm 2 / Vs below, 20cm 2 / Vs below, 15cm 2 / Vs below, 14cm 2 / Vs below, 13cm 2 / Vs below, 12cm 2 / Vs below, 11cm 2 / Vs below, 10cm 2 / Vs and below, 9.5cm 2 / Vs below, 9cm 2 / Vs and below, 8.5cm 2 / Vs and below, 8cm 2 / Vs and below, 7.5cm 2 / Vs below, 7cm 2 / Vs and below, 6.5cm 2 / Vs below, 6cm 2 / Vs and below, 5.5cm 2 / Vs below, 5cm 2 / Vs and below, 4.5cm 2 / Vs below, 4cm 2 / Vs and below, 3.5cm 2 / Vs below, 3cm 2 / Vs and below, 2.5cm 2 / Vs below, 2cm 2 / Vs and below, 1.5cm 2 / Vs below, 1cm2 / Vs or less, 0.75cm 2 / Vs or less, or 0.5cm 2 The value is less than or equal to / Vs. The mobility of the composition (e.g., hole mobility) can be between any of the minimum and maximum values ​​above. For example, the composition may have a mobility, e.g., hole mobility of 0.1 to 100 cm². 2 / Vs (for example, 0.1~50cm) 2 / Vs, 50~100cm 2 / Vs, 0.1~20cm 2 / Vs, 20-40cm 2 / Vs, 40-60cm 2 / Vs, 60-80cm 2 / Vs, 80~100cm 2 / Vs, 0.1~80cm 2 / Vs, 0.1~60cm 2 / Vs, 0.1~20cm 2 / Vs, 0.1~10cm 2 / Vs, 0.1~5cm 2 / Vs, 0.5~100cm 2 / Vs, 1~100cm 2 / Vs, 5~100cm 2 / Vs, 10~100cm 2 / Vs, 20~100cm 2 / Vs, 40~100cm 2 / Vs, 60~100cm 2 / Vs, 0.25~90cm 2 / Vs, 0.5~75cm 2 / Vs, 0.75~50cm 2 / Vs, 1-25cm 2 / Vs, or 1-10cm 2 / Vs) may be. In some examples, the composition has a mobility, e.g., hole mobility of 1 to 10 cm. 2 / Vs (for example, 1-5cm) 2 / Vs, 5~10cm 2 / Vs, 1~4cm 2 / Vs, 4~7cm 2 / Vs, 7-10cm 2 / Vs, 1-8cm 2 / Vs, 1-6cm 2 / Vs, 1-3cm2 / Vs, 2-10cm 2 / Vs, 4~10cm 2 / Vs, 6-10cm 2 / Vs, 8-10cm 2 / Vs, 1.5~9.5cm 2 / Vs, or 2-5cm 2 / Vs) is possible.

[0078] This specification also discloses devices comprising any of the compositions disclosed herein.

[0079] In some examples, the device further comprises a substrate, and the composition is deposited on the substrate as a layer. The substrate may include any suitable substrate. For example, the substrate may include LiGaO2, GaN on a c-plane sapphire template, on-axis c-sapphire, off-axis c-sapphire, Ga2O3, Si, or a combination thereof.

[0080] In some examples, the layer has a surface roughness with an RMS value of 15 nm or less (e.g., 14.5 nm or less, 14 nm or less, 13.5 nm or less, 13 nm or less, 12.5 nm or less, 12 nm or less, 11.5 nm or less, 11 nm or less, 10.5 nm or less, 10 nm or less, 9.5 nm or less, 9 nm or less, 8.5 nm or less, 8 nm or less, 7.5 nm or less, 7 nm or less, 6.5 nm or less, 6 nm or less, 5.5 nm or less, 5 nm or less, 4.5 nm or less, 4 nm or less, 3.5 nm or less, 3 nm or less, 2.5 nm or less, 2 nm or less, 1.5 nm or less, 1 nm or less, or 0.5 nm or less). In some examples, the layer has a surface roughness with an RMS value of 10 nm or less. In some examples, the layer has a surface roughness with an RMS value of 5 nm or less. In some examples, the layer has a surface roughness with an RMS value of 2.5 nm or less.

[0081] In some examples, the layers have an average thickness of 100 nm or more (for example, 125 nm or more, 150 nm or more, 175 nm or more, 200 nm or more, 225 nm or more, 250 nm or more, 275 nm or more, 300 nm or more, 325 nm or more, 350 nm or more, 375 nm or more, 400 nm or more, 425 nm or more, 450 nm or more, 475 nm or more, 500 nm or more, 525 nm or more, 550 nm or more, 575 nm or more, 600 nm or more, 625 nm or more, 650 nm or more, 675 nm or more, 700 nm or more, 725 nm or more, 750 nm or more, 775 nm or more, 800 nm or more, 825 nm or more, 850 nm or more, 875 nm or more, 900 nm or more, 925 nm or more, or 950 nm or more). In some examples, the layers have an average thickness of 1000 nm or less (e.g., 975 nm or less, 950 nm or less, 925 nm or less, 900 nm or less, 875 nm or less, 850 nm or less, 825 nm or less, 800 nm or less, 775 nm or less, 750 nm or less, 725 nm or less, 700 nm or less, 675 nm or less, 650 nm or less, 625 nm or less, 600 nm or less, 575 nm or less, 550 nm or less, 525 nm or less, 500 nm or less, 475 nm or less, 450 nm or less, 425 nm or less, 400 nm or less, 375 nm or less, 350 nm or less, 325 nm or less, 300 nm or less, 275 nm or less, 250 nm or less, 225 nm or less, 200 nm or less, 175 nm or less, or 150 nm or less). The average thickness range of the layers may be between any of the minimum and maximum values ​​listed above.For example, the layers have an average thickness of 100-1000nm (e.g., 100-500nm, 500-1000nm, 100-250nm, 250-500nm, 500-750nm, 750-1000nm, 100-200nm, 200-300nm, 300-400nm, 400-500nm, 500-600nm, 600-700nm, 700-800nm, 800-900nm, 900-1000nm, 100-900nm, 100-800nm, 100-700nm). The thickness may be m, 100-600nm, 100-400nm, 100-300nm, 200-1000nm, 300-1000nm, 400-1000nm, 600-1000nm, 700-1000nm, 800-1000nm, 150-950nm, 200-900nm, 500-900nm, 500-800nm, 500-700nm, 550-1000nm, 550-950nm, 600-900nm, 700-800nm, or 725-775nm). In some examples, the layer may have an average thickness of 100-200nm. In some examples, the layer may have an average thickness of 700-800nm.

[0082] The device may include any suitable device. In some examples, the device includes vertical PN diodes, MOSFET devices such as power MOSFETs or trench MOSFETs, MESFET devices, MODFET devices, current-aperture vertical electron transistor (CAVET) devices, or combinations thereof. In some examples, the device includes vertical power devices. In some examples, the device includes optical devices, electronic devices, optoelectronic devices, or combinations thereof. In some examples, the device includes diodes.

[0083] In some examples, the device is n-Ga2O3 / pM a Ga b O c n-AlN / pM a Ga b O c n-BN / pM a Ga b O c, n-GaN / p-M a Ga b O c 、 or n-AlGaN / p-M a Ga b O c includes a heterojunction.

[0084] In some examples, the device is n-Ga2O3 / p-Li a Ga b O c , n-AlN / p-Li a Ga b O c , n-BN / p-Li a Ga b O c , n-GaN / p-Li a Ga b O c , or n-AlGaN / p-Li a Ga b O c includes a heterojunction.

[0085] In some examples, the device is n-Ga2O3 / p-Li a Ga b O2, n-AlN / p-Li a Ga b O2, n-BN / p-Li a Ga b O2, n-GaN / p-Li a Ga b , or n-AlGaN / p-Li a Ga b includes a heterojunction of O2.

[0086] In some examples, the device is n-Ga2O3 / p-Li x Ga 1-x O2, n-AlN / p-Li x Ga 1-x O2, n-BN / p-Li x Ga 1-x O2, n-GaN / p-Li x Ga 1-x , or n-AlGaN / p-Li x Ga 1-xIncludes O2 heterojunctions.

[0087] In some examples, the device is n-Ga2O3 / p-Li x Ga 1-x Includes O2 heterojunctions.

[0088] In some examples, the device is n-Ga2O3 / p-Li a Ga b O2, n-AlN / p-Li a Ga b O8, n-BN / p-Li a Ga b O8, n-GaN / p-Li a Ga b O8, or n-AlGaN / p-Li a Ga b Includes O8 heterozygotes.

[0089] In some examples, the device includes an n-Ga2O3 / p-LiGa5O8 heterojunction.

[0090] This specification also discloses methods of using any of the compositions disclosed herein.

[0091] This specification also provides methods for producing any of the compositions or devices disclosed herein. In some examples, the method involves contacting a gallium-containing precursor with a lithium or sodium-containing precursor at a predetermined temperature in the presence of oxygen or an oxygen-containing precursor, thereby reacting the gallium-containing precursor, the lithium or sodium-containing precursor, and the oxygen or oxygen-containing precursor to form a composition. In some examples, the method involves contacting a gallium-containing precursor with a lithium-containing precursor at a predetermined temperature in the presence of oxygen or an oxygen-containing precursor, thereby reacting the gallium-containing precursor, the lithium-containing precursor, and the oxygen or oxygen-containing precursor to form a composition.

[0092] In some examples, the gallium-containing precursor includes Ga(acac)3([CH3COCH=C(O-)CH3]3Ga), trimethylgallium (TMGa), triethylgallium (TEGa), or a combination thereof. In some examples, the gallium-containing precursor includes Ga(acac)3([CH3COCH=C(O-)CH3]3Ga).

[0093] In some cases, the sodium-containing precursor is sodium acetoacetate (C4H5NaO3), tert-butoxide sodium (NaO3). t This includes Bu), sodium hexamethyldisilazide (NaHMDS), sodium 2,2,6,6-tetramethyl-3,5-heptanedionate (NaTMHD), or a combination thereof.

[0094] In some cases, lithium-containing precursors include lithium acetoacetate (C4H5LiO3), tert-butoxide lithium (LiO3), and others. t This includes lithium (Bu), lithium hexamethyldisilazide (LiHMDS), lithium 2,2,6,6-tetramethyl-3,5-heptanedionate (LiTMHD), or combinations thereof. In some examples, the lithium-containing precursor includes lithium acetoacetate (C4H5LiO3).

[0095] In some examples, the gallium-containing precursor and / or the lithium or sodium-containing precursor each independently contain a fluid.

[0096] In some examples, gallium-containing precursors and / or lithium or sodium-containing precursors are supplied independently with a carrier gas. In some examples, the carrier gas includes argon, helium, N2, or a combination thereof. In some examples, the carrier gas includes argon.

[0097] In some cases, the temperature is 600°C or higher (e.g., 625°C or higher, 650°C or higher, 675°C or higher, 700°C or higher, 725°C or higher, 750°C or higher, 775°C or higher, 800°C or higher, 825°C or higher, 850°C or higher, 875°C or higher, 900°C or higher, 925°C or higher, 950°C or higher, 975°C or higher, 1000°C or higher, 1025°C or higher, or 1050°C or higher). In some examples, the temperature is 1100°C or less (e.g., 1075°C or less, 1050°C or less, 1025°C or less, 1000°C or less, 975°C or less, 950°C or less, 925°C or less, 900°C or less, 875°C or less, 850°C or less, 825°C or less, 800°C or less, 775°C or less, 750°C or less, 725°C or less, 700°C or less, 675°C or less, or 650°C or less). The temperature range can be between any of the minimum and maximum values ​​listed above. For example, the temperature could be between 600°C and 1100°C (e.g., 600°C to 850°C, 850°C to 1100°C, 600°C to 700°C, 700°C to 800°C, 800°C to 900°C, 900°C to 1000°C, 1000°C to 1100°C, 600°C to 1000°C, 600°C to 900°C, 600°C to 800°C, 700°C to 1100°C, 800°C to 1100°C, 900°C to 1100°C, 650°C to 1050°C, 700°C to 1000°C, 800°C to 1000°C, 650°C to 950°C, or 800°C to 950°C). In some examples, the temperature could be between 600°C and 1000°C, for example, 800°C to 1000°C.

[0098] This method may include, for example, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), pulsed laser deposition (PLD), low-pressure chemical vapor deposition (LPCVD), mist CVD, or a combination thereof. In some examples, this method includes mist CVD.

[0099] In some examples, the method involves depositing a composition onto a substrate. Examples of substrates include, but are not limited to, LiGaO2, GaN on a c-plane sapphire template, on-axis c-sapphire, off-axis c-sapphire, Ga2O3, or combinations thereof.

[0100] Numerous embodiments of the present invention have been described. Needless to say, it is understood that various modifications can be made without departing from the spirit and scope of the invention. Therefore, other embodiments are within the scope of the following claims.

[0101] The following examples are intended to further illustrate certain aspects of the devices and methods described herein and are not intended to limit the scope of the “claims.” [Examples]

[0102] The following examples are provided below to illustrate the methods and results according to the subject matter disclosed herein. These examples are not intended to include all aspects of the subject matter disclosed herein, but rather to illustrate representative methods and results. These examples are not intended to exclude equivalents and variations of the invention that would be apparent to those skilled in the art.

[0103] While we strive to ensure accuracy in numerical values ​​(e.g., quantity, temperature, etc.), please allow for a certain degree of error and deviation. Unless otherwise specified, parts refer to parts by weight, temperature to °C or ambient temperature, and pressure to atmospheric pressure or near atmospheric pressure. There are many variations and combinations of measurement conditions, such as component concentration, temperature, pressure, and other measurement ranges and conditions that can be used to optimize the described process.

[0104] Example 1: LiGaO2, an ultrawide bandgap oxide semiconductor with p-type conductivity for power device applications. Beta-phase gallium oxide (β-Ga2O3), with its ultra-wide bandgap (UWBG) of approximately 4.8 eV, is attracting attention as a promising semiconductor candidate for power electronics devices. Its predicted high critical field strength (approximately 8 MV / cm) and the availability of scalable, high-quality Ga2O3 substrates synthesized from molten material present Ga2O3 as a promising semiconductor for high-power-density power electronics devices. 3は Although it stands out as a promising UWBG semiconductor material for next-generation high-power and high-frequency electronic and optoelectronic applications, certain material constraints must be addressed to fully realize its potential. The lack of p-type conductivity can be a major obstacle to the design of Ga2O3 devices. All major acceptor candidates for β-Ga2O3 have been theoretically calculated to act as deep acceptors (Lyons JL. Semiconductor science and technology, 2018, 33(5), 05LT02; Neal AT et al. Applied Physics Letters, 2018, 113(6), 062101), exhibiting very low activation efficiency and trap-like acceptor behavior. Furthermore, it has been theoretically predicted that holes in many oxides (Ga2O3, In2O3, SnO2, MgO) prefer localized, self-trapped polaron morphology around O-sites due to characteristic lattice distortions (Varley JB et al. Physical Review B, 2012, 85(8), 081109). Even if activated holes are present, their conductivity is extremely low, hindering the p-type conductivity of such materials.

[0105] One approach to address the issue of the lack of p-type Ga2O3 is to form a heterojunction pn junction using an alternative p-type material. In recent developments, p-type nickel oxide (NiO, having a bandgap of 3.4 - 4 eV) has been used to fabricate pn junction diodes with β-Ga2O3 (Kokubun Y et al. Appl. Phys. Express, 2016, 9(9), 091101). NiO / Ga2O3 pn diodes have achieved a breakdown voltage (BV) of several kilovolts and a low differential specific on-resistance (R ON,SP ). (Lu X et al. IEEE Electron Device Lett. 2020, 41(3), 449 - 452; Wang Y et al. IEEE Trans. Power Electron. 2022, 37(4), 3743 - 3746; Wang B et al. IEEE Electron Device Lett. 2023, 44(2), 221 - 224). However, the performance of these devices is limited by the relatively small bandgap of NiO.

[0106] LiGaO2 with an optical gap greater than 5.3 eV has been studied in the past as a transparent ceramic material for piezoelectrics (Boonchun A et al. Phys. Rev.B, 2010, 81(23), 235214; Gupta SN et al. J.Appl. Phys. 1976, 47(3), 858-860; Nanamatsu S et al. Jpn. J.Appl. Phys. 1972, 11(6), 816), and for nonlinear optical applications (Knoll P et al. Phys. Rev.B, 1984, 29(4), 2221-2226, Rashkeev SN et al. JOSA B, 1999, 16(12), 2217-2222). LiGaO2 was grown in bulk single-crystal form (Ishii T et al. J.Cryst. Growth, 1998, 186(3), 409-419; Marezio M. Acta Crystallogr. 1965, 18(3), 481-484), intended for use as a lattice-matched substrate for GaN epitaxy (Christensen A et al. IEEE Trans. Electron Devices, 2005, 52(8), 1683-1688; Doolittle WA et al. Solid-State Electron. 2000, 44(2), 229-238; Sakurada K et al. Appl. Phys. Lett. 2007, 90(21), 211913; Chen C et al. J.Cryst. Growth 2014, 402, 325-329). LiGaO2 can be considered an I-III-VI2 analog of the II-VI material ZnO, having a Wurtzite-based crystal structure with a regular arrangement of Li and Ga atoms on the Wurtzite cation sublattice. In particular, it has the Pna21 space group as its ground state (β-LiGaO2).Mixed alloy systems of ZnO and LiGaO2, as well as ZnO / LiGaO2 heterojunctions, have also been studied (Ohkubo I et al. J. Appl. Phys. 2002, 92(9), 5587-5589; Omata T et al. J.Appl. Phys. 2008, 103(8), 083706; Omata T et al. Jpn. J.Appl. Phys. 2011, 50(3R), 031102). First-principles calculations suggest that LiGaO2 can be doped n-type with Si or Ge, making it promising for ultra-wide bandgap semiconductor applications (Boonchun A et al. J.Appl. Phys.2019,126(15),155703; Boonchun A et al. Oxide-Based Mater. Devices II,SPIE,2011,pp.129-134; Dabsamut K et al. J.Phys. Appl. Phys.2020,53(27),274002; Skachkov D et al. J.Phys. Appl. Phys.2020,53(17),17LT01). However, research on doping in LiGaO2 remains insufficient.

[0107] In this specification, Li-deficient or Li-excess UWBG semiconductors LiGaO2 having p-type conductivity are proposed. As an example, Li-deficient or Li-excess LiGaO 2はThese can be obtained by mist chemical vapor deposition (mist CVD) technology. Unintentionally doped Li-deficient or Li-rich LiGaO2 thin films are deposited on various substrates, including LiGaO2, GaN on c-plane sapphire templates, on-axis c-sapphire, off-axis c-sapphire, and Ga2O3 substrates, using a custom-designed mist CVD chamber. The precursor solution is prepared by directly dissolving gallium acetylacetate (Ga(acac)3[CH3COCH=C(O-)CH3]3Ga, 99.99%) and lithium acetoacetate (C4H5LiO3, 97%) in deionized (DI) water. The Ga / Li molar ratio can be adjusted to <1, =1, or >1. The solution is stirred at room temperature and ultrasonically atomized into spray or mist particles using an ultrasonic generator. The atomized particles are then supplied into the growth chamber using argon (Ar) as the carrier gas. The growth substrate is loaded into the growth chamber, and the growth temperature can be widely adjusted between 600 and 1100°C, for example, between 600 and 1000°C.

[0108] Figures 1A to 1D show the surface morphology of LiGaO2 samples grown on GaN on a sapphire template at different growth temperatures. Relatively small lattice mismatch (approximately 2%) between GaN and LiGaO2 enables the growth of high-quality films. Corresponding AFM images shown in Figures 2A to 2D confirm that at a growth temperature of 900°C, the surface has a low surface roughness with an RMS value of 1.6 nm. As shown in Figure 3, the thickness of the film obtained at 900°C is estimated to be approximately 750 nm from the cross-sectional SEM image. The growth time was 30 minutes. A sharp interface between the grown film and the GaN template can be observed. Figure 4 shows the XRD spectrum of the same sample. XRD peaks at approximately 34.55°, 41.68°, and 72.86° are attributed to GaN and sapphire peaks originating from the substrate template, while LiGaO2 (001) and (002) peaks can be clearly observed at approximately 18.74° and 38.01°.

[0109] Figures 5A to 5D show planar SEM images and corresponding AFM images of LiGaO2 samples grown at 850°C on on-axis and 6° off-cut c-plane sapphire substrates. The relatively rough surface of the LiGaO2 sample grown on the on-axis c-sapphire substrate is due to a large lattice mismatch between LiGaO2 and sapphire (approximately 5-12% depending on the growth direction). However, it should be noted that when using an off-cut sapphire substrate, the surface morphology becomes very smooth with an RMS value of 1.48 nm. Van der Pohole measurements at room temperature of the LiGaO2 film grown on the c-sapphire substrate showed stable p-type conductivity, and the doping concentration at room temperature was 10 17 cm -3 The platform operates in the low to medium range, with a movement of 2-5 cm. 2 It is confirmed that it is / Vs.

[0110] Figures 6A and 6B show AFM images of LiGaO2 samples grown at 850°C on (010)(Figure 6A) and (001)(Figure 6B)Ga2O3 substrates. (010)Hall measurements at room temperature for the samples grown on the Ga2O3 substrate showed a length of 1-10 cm. 2 Low 10 with hole mobility of / Vs 16 cm -3 p-type doping is shown. (001)Hall measurements at room temperature of the sample grown on a Ga2O3 substrate showed 1-3 cm 2 Low to medium 10 with / Vs hole mobility 17 cm -3 p-type doping is shown.

[0111] XPS measurements performed on GaN on a sapphire template and LiGaO2 grown on a sapphire substrate showed that the Li-to-Ga atomic ratio was less than 1 (Figure 7). This indicates that the grown LiGaO2 film was Li-deficient. Depending on the growth conditions and substrate selection, the Li-to-Ga atomic ratio can vary between 0 and 1.

[0112] Based on the successful demonstration of p-type conductivity in Li-deficient LiGaO2, several device designs are proposed for power device applications. Figure 8A shows n - -Ga2O3 drift layer, n + Figure 8B shows a vertical PN diode based on a Ga2O3 substrate and a p-LiGaO2 layer. Figure 8C shows a LiGaO2-Ga2O3 trench MOSFET. Figure 8D shows a LiGaO2-Ga2O3 current-aperture vertical electron transistor (CAVET). In these designs, the main structure is based on an n-Ga2O3 / p-LiGaO2 heterojunction.

[0113] Example 2: Ultra-wide bandgap oxide semiconductor with P-type conductivity Beta-gallium oxide (β-Ga2O3) has an ultra-wide bandgap (approximately 4.9 eV) and a high critical field (E C Due to its controllable doping capabilities and the availability of high-quality large-diameter wafers, it has emerged as a promising material for future power devices (Pearton SJ et al. Appl. Phys. Rev. 2018, 5(1), 011301). While n-type β-Ga2O3 can be readily obtained by Si or Sn doping, the existence of p-type β-Ga2O3 has not yet been reported. One potential approach to fabricating β-Ga2O3 devices with pn junctions involves using a heterojunction between β-Ga2O3 and another p-type semiconductor. In this case, oxide materials are preferred as the p-type semiconductor because they prevent interfacial oxidation reactions that occur when non-oxide materials are used, enabling more efficient device fabrication methods. In recent developments, p-type nickel oxide (with a band gap of 3.4-4 eV) has been used to fabricate pn junction diodes with β-Ga2O3 (Kokubun Y et al. Appl. Phys. Express 2016, 9(9), 091101). Since its initial report, NiO / Ga2O3pn diodes have been shown to have a voltage rating (BV) of several kilovolts and a low differential specific on-resistance (R). ON,SP(Lu X et al. IEEE Electron Device Lett. 2020, 41(3), 449-452; Wang Y et al. IEEE Trans. Power Electron. 2022, 37(4), 3743-3746; Wang B et al. IEEE Electron Device Lett. 2023, 44(2), 221-224). However, the performance of these devices is significantly limited by the relatively small bandgap of NiO.

[0114] Recently, there has been renewed interest in LiGaO2 as a potential ultra-wide bandgap semiconductor material. LiGaO2 is a transparent ceramic material whose applications in the fields of piezoelectricity and nonlinear optics have been previously studied (Boonchun A et al. Phys. Rev.B 2010,81(23),23521; Gupta SN et al. J.Appl. Phys.1976,47(3),858-860; Nanamatsu S et al. Jpn. J.Appl. Phys.1972,11(6),816; Knoll P et al. Phys. Rev.B 1984,29(4),2221-2226; Rashkeev SN et al. JOSA B 1999,16(12),2217-2222). This material can be grown as a bulk single crystal and is suitable as a lattice-matched substrate for GaN epitaxial growth (Ishii T et al. J.Cryst. Growth 1998,186(3),409-419; Marzio M.Acta Crystallogr.1965,18(3),481-484, Cristensen A et al. IEEE Trans. Electron Devices 2005,52(8),1683-1688; Doolittle WA et al. Solid-State Electron.2000,44(2),229-238; Sakurada K et al. Phys. Lett.2007,90(21),211913; Chen C et al. J.Cryst. Growth 2014,402,325-329). LiGaO2 has a wurtzite-based crystal structure and can be considered an I-III-VI2 analog of the II-VI material ZnO. This crystal structure is characterized by an ordered arrangement of Li and Ga atoms on a wurtzite-based cation sublattice, and its ground state is represented by the Pna21 space group (β-LiGaO2).Furthermore, mixed alloy systems of ZnO and LiGaO2, as well as ZnO / LiGaO2 heterojunctions, have also been studied (Ohkubo I et al. J.Appl. Phys.2002,92(9),5587-5589; Omata T et al. J.Appl. Phys.2008,103(8),083706; Omata T et al. Jpn. J.Appl. Phys.2011,50(3R),031102). Recent research has shown that LiGaO2 can be doped in the n-type with Si or Ge, which suggests potential applications in ultra-wide bandgap semiconductors (Boonchun A et al. J.Appl. Phys.2019,126(15),155703;Boonchun A et al. Oxide-Based Mater. Devices II,SPIE,2011,pp.129-134;Dabsamut K et al. J.Phys. Appl. Phys.2020,53(27),274002;Lenyk CA et al. J.Appl. Phys.2018,124(13),135702;Skachkov D et al. J.Phys. Appl. Phys.2020,53(17),17LT01). From this perspective, LiGaO2 may offer certain advantages compared to β-Ga2O3, such as a simpler tetrahedral crystalline structure and potentially a wider band gap.

[0115] In this specification, Li exhibits high p-type conductivity. x Ga y O z An ultrawide bandgap semiconductor called is proposed. This material was obtained using a customized mist chemical vapor deposition (CVD) technique. x Ga y O zThin films can be deposited on GaN on a sapphire template, as well as on on-axis and off-cut c-sapphire substrates, using a mist CVD chamber. To prepare the precursor solution, gallium acetylacetate (Ga(acac)3[CH3COCH=C(O-)CH3]3Ga, 99.99%) and lithium acetoacetate (C4H5LiO3, 99.95%) are dissolved in deionized (DI) water. The Ga / Li molar ratio is adjusted to approximately 1. The solution is used to generate atomized particles using an ultrasonic generator operating at 1.7 MHz. The atomized particles are then supplied into the growth chamber using argon (Ar) as the carrier gas. The growth substrate is loaded into the growth chamber, and the growth temperature can be widely adjusted between 800 and 1000°C. A series of material characterization techniques confirmed that the films grown on each substrate exhibited a spinel cubic structure known as LiGa5O8. The p-type conductive films were found to have a Li-rich composition.

[0116] LiGa5O8 is a complex oxide compound belonging to the spinel group of compounds and is structurally isomorphic to MgAl2O4 spinel. Its crystal structure has a lattice constant a = 8.203 Å and a space group

number

[0117] LiGa5O8 has attracted considerable research interest, particularly due to its fascinating luminescence properties when doped with transition metal (MT) or rare earth (RE) impurities (Liu F et al. Sci.Rep.2013,3(1),1554; Ao L et al. J.Eur. Ceram. Soc.2020,40(15),5498-5503; Sousa Om et al. J.Solid State Chem.2020,289,121472). For example, Cr 3+ When doped with Cr, it exhibits sustained luminescence properties and shows promise for applications in biomedical imaging. Undoped and Cr 3+- The structural, electronic, and optical properties of both doped LiGa5O8 have been investigated by density functional theory (DFT) (Sousa Om et al. J. Solid State Chem. 2020, 289, 121472; De Sousa OM et al. Comput. Theor. Chem. 2018, 1123, 96-101). Theoretical calculations suggest a bandgap of approximately 5.7 eV, which makes LiGa5O8 a potentially ultrawide bandgap semiconductor. However, to date, there are no experimental reports on the growth of thin films of undoped LiGa5O8.

[0118] This specification demonstrates the CVD growth of Li-rich LiGa5O8 exhibiting p-type conductivity. This is an important finding, as no ultrawide bandgap oxide semiconductors with p-type conductivity have been demonstrated. Figures 9A to 9D show the surface morphology of LiGa5O8 samples grown on GaN on a sapphire template at different growth temperatures. From the corresponding AFM images shown in Figures 10A to 10D, it is confirmed that the smoothest surface is obtained at a growth temperature of 900°C. The surface roughness RMS is determined to be approximately 1.60 nm. As shown in Figure 11A, the thickness of the film obtained at 900°C is estimated to be approximately 60 nm from the cross-sectional TEM image. A sharp interface between the grown film and the GaN layer can be observed. The atomic-resolution HAADF-STEM image in Figure 11B also shows that the grown film has a spinel cubic crystal structure. Figure 12 shows the XRD spectrum of the same sample. The XRD peaks at approximately 34.55°, 41.68°, and 72.86° are attributed to GaN and sapphire peaks originating from the substrate, while the presence of a LiGa5O8(511) peak at approximately 58.46° can be observed. Note that other peaks around 18.74° and 38.01° are also prominent, suggesting the possibility of rotated crystalline regions in the grown film.

[0119] Similar surface morphologies were observed in LiGa5O8 samples grown on c-sapphire substrates loaded together. Figures 13A to 13D show planar SEM images and corresponding AFM images of LiGa5O8 samples grown at 850°C on on-axis and 6° off-cut c-plane sapphire substrates. It is noteworthy that using the off-cut angle can improve the surface morphology of films grown on sapphire substrates. As shown in Figures 14A to 14B, cross-sectional TEM images and atomic-resolution HAADF STEM images of the sample grown on the on-axis c-sapphire substrate confirm a film thickness of approximately 96 nm and a spinel cubic crystal structure similar to that of the sample grown on the GaN template. Hall measurements, as shown in Table 1, suggest stable p-type conductivity in this sample.

[0120] [Table 1] The atomic composition of the grown films was investigated using X-ray photoelectron spectroscopy (XPS). Figure 15 shows, as an example, the Li 1s, Ga 3s, and O 1s peaks obtained from a LiGa5O8 film grown on GaN on a sapphire template at 900°C. The curves were fitted with Voigt peak shapes, and Shirley correction was used as the background. Next, the Li / Ga, Li / O, and Ga / O atomic ratios were derived using the fitted peak areas. As shown in Table 2, all samples grown on the three types of substrates had Li / Ga / O atomic ratios of approximately 1:5:8, confirming a compositional excess of Li. Furthermore, Rutherford backscatter spectroscopy (RBS) and nuclear reaction analysis (NRA) measurements of the sample grown on an on-axis c-sapphire substrate at 900°C also confirmed a compositional excess of Li. The Li, Ga, and O content was determined to be approximately 9.5%, 33%, and 57.5%, respectively.

[0121] [Table 2] Given the successful demonstration of p-type conductivity in Li-rich LiGa5O8, several device designs are proposed for power device applications. Figure 16A shows n - -Ga2O3 drift layer, n + Figure 16B shows a LiGa5O8-Ga2O3 MOSFET. Figure 16C shows a LiGa5O8-Ga2O3 trench MOSFET. Figure 16D shows a LiGa5O8-Ga2O3 current-aperture vertical electron transistor (CAVET). In these designs, the main structure is based on an n-Ga2O3 / p-LiGa5O8 heterojunction.

[0122] Exemplary aspects In view of the compositions, devices, systems, and methods described above, more specifically, embodiments of the present invention are described below. However, these specific embodiments described herein should not be construed as limiting any different claims, including different or more general teachings set forth herein, nor should the “specific” embodiments be construed as being limited in any way other than the inherent meaning of the words and phrases used herein literally.

[0123] Example 1: A composition comprising an ultrawide bandgap oxide semiconductor having p-type conductivity, wherein the oxide semiconductor is such that M is Li or Na, a Ga b O c A composition containing the following:

[0124] Example 2: The composition is such that M is Li or Na, a is 0 to 1, b is 0 to 5, and c is 2 to 8. a Ga b O c A composition comprising, provided that at least one of a or b is not 0, any of the embodiments herein, particularly the composition described in Example 1.

[0125] Example 3: Any example of this specification, particularly the composition described in Example 2, wherein a is 0 to 1 and b is 0 to 1.

[0126] Example 4: Any example of this specification, particularly the composition described in Example 2, wherein a is 0 to 1 and b is 4 to 5.

[0127] Example 5: A composition according to any example of this specification, particularly Examples 2 to 4, wherein a is 0 to 1 and c is 2.

[0128] Example 6: A composition according to any example of this specification, particularly Examples 2 to 4, wherein a is 0 to 1 and c is 8.

[0129] Example 7: A composition according to any example of this specification, particularly Examples 2 to 6, wherein b is 0 to 1 and c is 2.

[0130] Example 8: A composition according to any example of this specification, particularly Examples 2 to 6, wherein b is 4 to 5 and c is 8.

[0131] Example 9: The composition is such that M is Li or Na, a is 0 to 1, and b is 4 to 5. a Ga b A composition comprising O8, as described in any of the examples herein, particularly those described in Examples 1 to 8.

[0132] Example 10: The composition is such that M is Li or Na, a is 0 to 1, and b is 0 to 1. a Ga b A composition according to any of the examples herein, particularly those described in Examples 1 to 8, comprising O2, provided that at least one of a or b is not 0.

[0133] Example 11: The composition is Li, where x is 0 to 1, for example, 0 to 0.5. x Ga 1-x O2 or Na x Ga 1-x A composition comprising O2, as described in any of the examples herein, particularly those described in Examples 1 to 10.

[0134] Example 12: The composition is Li, where x is 0 to 1, for example, 0 to 0.5. x Ga 1-x A composition comprising O2, as described in any of the examples herein, particularly those described in Examples 1 to 11.

[0135] Example 13: A composition according to any of the examples herein, particularly those described in Examples 1 to 12, wherein the atomic ratio of Li to Ga is 0 to 1.

[0136] Example 14: Composition is β-Li x Ga 1-xA composition comprising O2, as described in any of the examples herein, particularly those described in Examples 1 to 13.

[0137] Example 15: Any of the examples herein, particularly those described in Examples 1 to 14, wherein the composition further comprises a dopant, for example, a p-type dopant.

[0138] Example 16: The dopant was 1 × 10¹¹ per cubic centimeter. 15 ~1 × 10 21 cm -3 , 1 x 10 per cubic centimeter 15 ~1 × 10 19 cm -3 , or 1 × 10 16 ~5×10 17 cm -3 A composition having the concentration of any of the examples herein, particularly those described in Examples 1 to 15.

[0139] Example 17: The composition is 0.1 to 100 cm 2 The mobility of / Vs is such that, for example, the hole mobility is 1 to 10 cm. 2 / Vs (for example, 2-5cm) 2 A composition described in any of the examples herein, particularly those in Examples 1 to 16, which is / Vs).

[0140] Example 18: A device comprising any of the embodiments of this specification, particularly the compositions described in Examples 1 to 17.

[0141] Example 19: Any embodiment of this specification, particularly the device described in Example 18, wherein the device further comprises a substrate and the composition is deposited as a layer on the substrate.

[0142] Example 20: Any example of this specification, particularly the device described in Example 19, wherein the substrate includes LiGaO2, GaN on a c-plane sapphire template, on-axis c-sapphire, off-axis c-sapphire, Ga2O3, Si, or a combination thereof.

[0143] Example 21: A device according to any example herein, particularly Examples 19-20, wherein the layer has a surface roughness with an RMS value of 15 nm or less, 10 nm or less, 5 nm or less, or 2.5 nm or less.

[0144] Example 22: A device according to any example of this specification, particularly Examples 19-21, wherein the layer has an average thickness of 100-1000 nm.

[0145] Example 23: A device according to any example of this specification, particularly Examples 19-22, wherein the layer has an average thickness of 100-200 nm.

[0146] Example 24: A device according to any example of this specification, particularly Examples 19-22, wherein the layer has an average thickness of 500 nm to 1000 nm, for example, 700 to 800 nm.

[0147] Example 25: Any example of this specification, particularly the devices described in Examples 18-24, wherein the device includes a vertical PN diode, a MOSFET device such as a power MOSFET or trench MOSFET, a MESFET device, a MODFET device, a current-aperture vertical electron transistor (CAVET) device, or a combination thereof.

[0148] Example 26: The device is one of the embodiments of this specification, particularly the devices described in Examples 18-25, wherein the device includes a vertical power device.

[0149] Example 27: Any embodiment of this specification, particularly the devices described in Examples 18-26, wherein the device includes an optical device, an electronic device, an optoelectronic device, or a combination thereof.

[0150] Example 28: A device comprising a diode, as described in any embodiment of this specification, particularly the devices described in Examples 18-27.

[0151] Example 29: The device is n-Ga2O3 / pM a Ga bO c n-AlN / pM a Ga b O c n-BN / pM a Ga b O c n-GaN / pM a Ga b O c , or n-AlGaN / pM a Ga b O c A device according to any of the embodiments of this specification, particularly those described in Examples 18-28, including a heterojunction.

[0152] Example 30: The device is n-Ga2O3 / p-Li a Ga b O c n-AlN / p-Li a Ga b O c n-BN / p-Li a Ga b O c n-GaN / p-Li a Ga b O c , or n-AlGaN / p-Li a Ga b O c A device according to any of the embodiments of this specification, particularly those described in Examples 18-29, including a heterojunction.

[0153] Example 31: The device is n-Ga2O3 / p-Li a Ga b O2, n-AlN / p-Li a Ga b O2, n-BN / p-Li a Ga b O2, n-GaN / p-Li a Ga b O2, or n-AlGaN / p-Li a Ga b A device according to any of the embodiments herein, particularly those described in Examples 18-30, including an O2 heterojunction.

[0154] Example 32: The device is n-Ga2O3 / p-Lix Ga 1-x O2, n-AlN / p-Li x Ga 1-x O2, n-BN / p-Li x Ga 1-x O2, n-GaN / p-Li x Ga 1-x O2, or n-AlGaN / p-Li x Ga 1-x A device according to any of the embodiments herein, particularly those described in Examples 18-31, including an O2 heterojunction.

[0155] Example 33: The device is n-Ga2O3 / p-Li x Ga 1-x A device according to any of the embodiments herein, particularly those described in Examples 18-32, including an O2 heterojunction.

[0156] Example 34: The device is n-Ga2O3 / p-Li a Ga b O8, n-AlN / p-Li a Ga b O8, n-BN / p-Li a Ga b O8, n-GaN / p-Li a Ga b O8, or n-AlGaN / p-Li a Ga b A device according to any of the embodiments herein, particularly those described in Examples 18-30, including an O8 heterojunction.

[0157] Example 35: Any example of this specification, in particular the device described in Example 34, wherein the device includes an n-Ga2O3 / p-LiGa5O8 heterojunction.

[0158] Example 36: A method using any of the examples specified herein, particularly the compositions described in Examples 1 to 17.

[0159] Example 37: A method using any of the examples herein, particularly the compositions described in Examples 1 to 17, wherein the method involves contacting a gallium-containing precursor with a lithium or sodium-containing precursor at a predetermined temperature in the presence of oxygen or an oxygen-containing precursor, thereby reacting the gallium-containing precursor, the lithium or sodium-containing precursor, and the oxygen or oxygen-containing precursor to form a composition.

[0160] Example 38: The method according to any example of this specification, particularly the method according to Example 37, wherein the method comprises contacting a gallium-containing precursor and a lithium-containing precursor at a predetermined temperature in the presence of oxygen or an oxygen-containing precursor, thereby reacting the gallium-containing precursor, the lithium-containing precursor, and the oxygen or oxygen-containing precursor to form a composition.

[0161] Example 39: The method according to any of the examples herein, particularly the method according to Example 37 or Example 38, wherein the gallium-containing precursor comprises Ga(acac)3([CH3COCH=C(O-)CH3]3Ga), trimethylgallium (TMGa), triethylgallium (TEGa), or a combination thereof.

[0162] Example 40: The method according to any of the examples herein, particularly those according to Examples 37-39, wherein the gallium-containing precursor comprises Ga(acac)3([CH3COCH=C(O-)CH3]3Ga).

[0163] Example 41: The sodium-containing precursor is sodium acetoacetate (C4H5NaO3), tert-butoxide sodium (NaO3). t The methods described herein, particularly those described in Examples 37-40, include Bu), sodium hexamethyldisilazide (NaHMDS), sodium 2,2,6,6-tetramethyl-3,5-heptanedionate (NaTMHD), or a combination thereof.

[0164] Example 42: The lithium-containing precursor is lithium acetoacetate (C4H5LiO3), tert-butoxide lithium (LiO3) tThe methods described herein, particularly those described in Examples 37-41, include Bu), hexamethyldisilazide lithium (LiHMDS), 2,2,6,6-tetramethyl-3,5-heptanedionate lithium (LiTMHD), or combinations thereof.

[0165] Example 43: The method according to any of the examples herein, particularly those of Examples 37 to 42, wherein the lithium-containing precursor comprises lithium acetoacetate (C4H5LiO3).

[0166] Example 44: The method according to any of the examples herein, particularly those of Examples 37 to 43, wherein each of the gallium-containing precursors and / or lithium or sodium-containing precursors independently comprises a fluid.

[0167] Example 45: The method according to any of the embodiments herein, particularly those of Examples 37 to 44, wherein the gallium-containing precursor and / or the lithium or sodium-containing precursor are each supplied independently with a carrier gas.

[0168] Example 46: The carrier gas is argon, helium, N2 Any example of this specification, including the method of Example 45, or a combination thereof.

[0169] Example 47: The method according to any of the embodiments herein, particularly the method according to Example 45 or Example 46, wherein the carrier gas comprises argon.

[0170] Example 48: Any example of this specification, particularly the method of Examples 37 to 47, wherein the temperature is 600°C to 1100°C, 600°C to 1000°C, 800°C to 1000°C, or 800°C to 950°C.

[0171] Example 49: Any example of this specification, particularly the method of Examples 37-48, wherein the method includes metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), pulsed laser deposition (PLD), low-pressure chemical vapor deposition (LPCVD), mist CVD, or a combination thereof.

[0172] Example 50: Any of the examples herein, particularly those of Examples 37-49, wherein the method includes mist CVD.

[0173] Example 51: The method according to Examples 37 to 50, wherein the method comprises depositing the composition onto a substrate.

[0174] Example 52: Any example of this specification, particularly the method according to Example 51, wherein the substrate includes LiGaO2, GaN on a c-plane sapphire template, on-axis c-sapphire, off-axis c-sapphire, Ga2O3, Si, or a combination thereof.

[0175] Other advantages of the present invention that are obvious and inherent will be apparent to those skilled in the art. It will also be understood that certain features or partial combinations are useful and can be used without reference to other features or partial combinations. This is intended and within the scope of the claims. Since many possible embodiments of the present invention can be carried out without departing from its scope, it will be understood that all matters described or shown in the accompanying drawings in this specification should be interpreted as illustrative rather than restrictive.

[0176] The methods of the appended claims are not limited by the specific methods described herein, which are intended to be illustrative of some aspects of the claims, and any functionally equivalent methods are intended to be included in the claims. In addition to those shown and described herein, various variations of the methods are intended to be included in the appended claims. Furthermore, although only certain representative method steps disclosed herein are specifically described, other combinations of method steps are also intended to be included in the appended claims, even if not specifically enumerated. Thus, combinations of steps, elements, components, or constituents may be explicitly mentioned herein, but other combinations of steps, elements, components, and constituents are included even if not explicitly mentioned.

Claims

1. A composition comprising an ultrawide bandgap oxide semiconductor having p-type conductivity, wherein the oxide semiconductor is such that M is Li or Na. ａ Ga ｂ O ｃ The composition comprising the above.

2. The composition is such that M is Li or Na, a is 0 to 1, b is 0 to 5, and c is 2 to 8. ａ Ga ｂ O ｃ The composition according to claim 1, comprising, provided that at least one of a or b is not zero.

3. The composition according to claim 2, wherein a is 0 to 1 and b is 0 to 1.

4. The composition according to claim 2, wherein a is 0 to 1 and b is 4 to 5.

5. The composition according to any one of claims 2 to 4, wherein a is 0 to 1 and c is 2.

6. The composition according to any one of claims 2 to 4, wherein a is 0 to 1 and c is 8.

7. The composition according to any one of claims 2 to 6, wherein b is 0 to 1 and c is 2.

8. The composition according to any one of claims 2 to 6, wherein b is 4 to 5 and c is 8.

9. The composition, wherein M is Li or Na, a is 0 to 1, and b is 4 to 5, M ａ Ga ｂ O ８ The composition according to any one of claims 1 to 8, comprising the same.

10. The composition is such that M is Li or Na, a is 0 to 1, and b is 0 to 1. ａ Ga ｂ O ２ A composition according to any one of claims 1 to 8, comprising, provided that at least one of a or b is not zero.

11. The composition is such that x is 0 to 1, for example, 0 to 0.

5. ｘ Ga １－ｘ O ２ or Na ｘ Ga １－ｘ O ２ A composition according to any one of claims 1 to 10, comprising:

12. The composition is such that x is 0 to 1, for example, 0 to 0.

5. ｘ Ga １－ｘ O ２ A composition according to any one of claims 1 to 11, comprising:

13. The composition according to any one of claims 1 to 12, wherein Li and Ga have an atomic ratio of 0 to 1.

14. The above composition is β-Li ｘ Ga １－ｘ O ２ A composition according to any one of claims 1 to 13, comprising:

15. The composition according to any one of claims 1 to 14, wherein the composition further comprises a dopant such as a p-type dopant.

16. The aforementioned dopant is 1 × 10 per cubic centimeter １５ ~1 x 10 ２１ cm －３ , 1 x 10 per cubic centimeter １５ ~1 x 10 １９ cm －３ , or 1 x 10 １６ ~5 x 10 １７ cm －３ The composition according to claim 15, having the concentration of [a certain value].

17. The composition is 0.1 to 100 cm ２ It has a mobility of / Vs, for example, hole mobility, for example 1 to 10 cm ２ / Vs (for example, 2-5 cm) ２ The composition according to any one of claims 1 to 16, wherein the composition is / Vs).

18. A device comprising the composition according to any one of claims 1 to 17.

19. The device according to claim 18, wherein the device further includes a substrate, and the composition is deposited as a layer on the substrate.

20. The substrate is LiGaO ２ GaN on a c-plane sapphire template, on-axis c-sapphire, off-axis c-sapphire, Ga ２ O ３ The device according to claim 19, comprising , Si, or a combination thereof.

21. The device according to claim 19 or claim 20, wherein the layer has a surface roughness with an RMS value of 15 nm or less, 10 nm or less, 5 nm or less, or 2.5 nm or less.

22. The device according to any one of claims 19 to 21, wherein the layer has an average thickness of 100 nm to 1000 nm.

23. The device according to any one of claims 19 to 22, wherein the layer has an average thickness of 100 nm to 200 nm.

24. The device according to any one of claims 19 to 22, wherein the layer has an average thickness of 500 nm to 1000 nm, for example, 700 to 800 nm.

25. The device according to any one of claims 18 to 24, wherein the device includes a MOSFET device such as a vertical PN diode, a power MOSFET or trench MOSFET, a MESFET device, a MODFET device, a current-aperture vertical electron transistor (CAVET) device, or a combination thereof.

26. The device according to any one of claims 18 to 25, wherein the device includes a vertical power device.

27. The device according to any one of claims 18 to 26, wherein the device includes an optical device, an electronic device, an optoelectronic device, or a combination thereof.

28. The device according to any one of claims 18 to 27, wherein the device includes a diode.

29. The aforementioned device n-Ga ２ O ３ / p-M ａ Ga ｂ O ｃ , n-AlN / p-M ａ Ga ｂ O ｃ n-BN / p-M ａ Ga ｂ O ｃ , n-GaN / p-M ａ Ga ｂ O ｃ , or n-AlGaN / p-M ａ Ga ｂ O ｃ A device according to any one of claims 18 to 28, comprising a heterojunction.

30. The aforementioned device n-Ga ２ O ３ / p-Li ａ Ga ｂ O ｃ , n-AlN / p-Li ａ Ga ｂ O ｃ , n-BN / p-Li ａ Ga ｂ O ｃ , n-GaN / p-Li ａ Ga ｂ O ｃ , or n-AlGaN / p-Li ａ Ga ｂ O ｃ A device according to any one of claims 18 to 29, comprising a heterojunction.

31. where the device is n-Ga ２ O ３ / p-Li ａ Ga ｂ O ２ , n-AlN / p-Li ａ Ga ｂ O ２ , n-BN / p-Li ａ Ga ｂ O ２ , n-GaN / p-Li ａ Ga ｂ O ２ , or n-AlGaN / p-Li ａ Ga ｂ O ２ The device according to any one of claims 18 to 30, comprising a heterojunction of.

32. where the device is n-Ga ２ O ３ / p-Li ｘ Ga １－ｘ O ２ , n-AlN / p-Li ｘ Ga １－ｘ O ２ , n-BN / p-Li ｘ Ga １－ｘ O ２ , n-GaN / p-Li ｘ Ga １－ｘ O ２ , or n-AlGaN / p-Li ｘ Ga １－ｘ O ２ The device according to any one of claims 18 to 31, comprising a heterojunction thereof.

33. The aforementioned device n-Ga ２ O ３ / p-Li ｘ Ga １－ｘ O ２ A device according to any one of claims 18 to 32, comprising a heterojunction.

34. The aforementioned device n-Ga ２ O ３ / p-Li ａ Ga ｂ O ８ , n-AlN / p-Li ａ Ga ｂ O ８ , n-BN / p-Li ａ Ga ｂ O ８ , n-GaN / p-Li ａ Ga ｂ O ８ , or n-AlGaN / p-Li ａ Ga ｂ O ８ A device according to any one of claims 18 to 30, comprising a heterojunction.

35. The aforementioned device n-Ga ２ O ３ / p-LiGa ５ O ８ The device according to claim 34, comprising a heterojunction.

36. A method of using the composition described in any one of claims 1 to 17.

37. A method for producing the composition according to any one of claims 1 to 17, wherein the method comprises contacting a gallium-containing precursor with a lithium or sodium-containing precursor at a predetermined temperature in the presence of oxygen or an oxygen-containing precursor, thereby reacting the gallium-containing precursor, the lithium or sodium-containing precursor, and the oxygen or the oxygen-containing precursor to form the composition.

38. The method according to claim 37, wherein the method comprises contacting the gallium-containing precursor and the lithium-containing precursor at a predetermined temperature in the presence of oxygen or the oxygen-containing precursor, thereby reacting the gallium-containing precursor, the lithium-containing precursor, and the oxygen or the oxygen-containing precursor to form the composition.

39. The gallium-containing precursor is Ga(acac) ３ ([CH ３ COCH=C(O-)CH ３ ] ３ The method according to claim 37 or claim 38, comprising Ga), trimethylgallium (TMGa), triethylgallium (TEGa), or a combination thereof.

40. The gallium-containing precursor is Ga(acac) ３ ([CH ３ COCH=C(O-)CH ３ ] ３ The method according to any one of claims 37 to 39, comprising Ga).

41. The sodium-containing precursor is sodium acetoacetate (C ４ H ５ NaO ３ ), tert-butoxide sodium (NaO ｔ The method according to any one of claims 37 to 40, comprising Bu), sodium hexamethyldisilazide (NaHMDS), sodium 2,2,6,6-tetramethyl-3,5-heptanedionate (NaTMHD), or a combination thereof.

42. The lithium-containing precursor is lithium acetoacetate (C ４ H ５ LiO ３ ), tert-butoxide lithium (LiO ｔ The method according to any one of claims 37 to 41, comprising Bu), lithium hexamethyldisilazide (LiHMDS), lithium 2,2,6,6-tetramethyl-3,5-heptanedionate (LiTMHD), or a combination thereof.

43. The lithium-containing precursor is lithium acetoacetate (C ４ H ５ LiO ３ The method according to any one of claims 37 to 42, including )

44. The method according to any one of claims 37 to 43, wherein the gallium-containing precursor and / or the lithium or sodium-containing precursor each independently contain a fluid (or more fluids).

45. The method according to any one of claims 37 to 44, wherein the gallium-containing precursor and / or the lithium or sodium-containing precursor are each supplied independently with a carrier gas.

46. The carrier gas is argon, helium, N ２ The method according to claim 45, including, or a combination thereof.

47. The method according to claim 45 or claim 46, wherein the carrier gas comprises argon.

48. The method according to any one of claims 37 to 47, wherein the temperature is 600°C to 1100°C, 600°C to 1000°C, 800°C to 1000°C, or 800°C to 950°C.

49. The method according to any one of claims 37 to 48, wherein the method comprises metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), pulsed laser deposition (PLD), low-pressure chemical vapor deposition (LPCVD), mist CVD, or a combination thereof.

50. The method according to any one of claims 37 to 49, wherein the method includes mist CVD.

51. The method according to any one of claims 37 to 50, wherein the method comprises depositing the composition on a substrate.

52. The substrate is LiGaO ２ GaN on a c-plane sapphire template, on-axis c-sapphire, off-axis c-sapphire, Ga ２ O ３ The method according to claim 51, comprising , Si, or a combination thereof.

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