Substrate processing system for manufacturing tandem cell structures

Abstract

A substrate processing system includes two or more process tools, each containing a plurality of process chambers for performing a corresponding substrate processing procedure, and a substrate transport mechanism for transporting substrates between the two or more process tools. The system further includes a control system for depositing one or more first layers on a substrate in one or more first process chambers to form first cells of a tandem cell structure. The control system further transports substrates from one or more first process chambers to one or more second process chambers. A combined process tool includes one or more second process chambers. The control system further deposits one or more second layers on a substrate in one or more second process chambers to form second cells of a tandem cell structure.

Claims

1. A process tool comprising two or more process chambers configured to perform corresponding substrate processing procedures, A substrate transport mechanism configured to transport substrates between two or more process tools, The system comprises a control system, and the control system is Depositing one or more first layers on a substrate in one or more first process chambers of the two or more process tools to form at least partially first cells of a tandem cell structure, Transporting the substrate from one or more first process chambers to one or more second process chambers of the two or more process tools, wherein the combined process tool of the two or more process tools comprises the one or more second process chambers, and transporting the substrate. Depositing one or more second layers on the substrate in one or more second process chambers to form at least partially the second cells of the tandem cell structure. A circuit board processing system.

2. The system further comprises a metal printing subsystem configured to deposit a metal layer on a substrate, The control system, The metal printing subsystem deposits one or more first metal electrodes on the first side of the substrate, and the metal printing subsystem deposits one or more second metal electrodes on the second side of the substrate. The substrate processing system according to claim 1, further relating to the present invention.

3. The substrate processing system according to claim 1, wherein each of the plurality of process chambers is configured to deposit its respective layer on the substrate by chemical vapor deposition (CVD), physical vapor deposition (PVD), or evaporation.

4. The control system, The substrate is to be inverted from a first orientation to a second orientation while being transported between at least two of the two or more process tools. The substrate processing system according to claim 1, further relating to the present invention.

5. The one or two second process chambers A first process chamber configured to deposit a first layer among the one or more second layers onto the substrate by a first deposition procedure, A second process chamber configured to deposit a second layer from the one or more second layers onto the substrate by a second deposition procedure, A third process chamber configured to deposit a third layer from the one or more second layers onto the substrate by a third deposition procedure, A fourth process chamber configured to deposit a fourth layer, among the one or more second layers, onto the substrate by a fourth deposition procedure, and A substrate processing system according to claim 1, comprising:

6. The control system, Depositing a perovskite layer on the substrate in one of the one or more second process chambers. The substrate processing system according to claim 5, further relating to the present invention.

7. The substrate processing system according to claim 5, wherein at least one of the first deposition procedure, the second deposition procedure, the third deposition procedure, or the fourth deposition procedure includes evaporation.

8. The substrate processing system according to claim 5, wherein the combination process tool is configured to handle the substrate in a vertical orientation.

9. The substrate processing system according to claim 1, further comprising a substrate tray including a grid structure configured to support one or more substrates along one or more edges of the one or more substrates.

10. The substrate processing system according to claim 9, wherein the substrate tray is equipped with an electrostatic chuck, and the electrostatic chuck is configured to hold a plurality of substrates on the substrate tray in response to the activation of the electrostatic chuck.

11. The substrate processing system according to claim 1, wherein the tandem cell structure comprises the second cell disposed on top of the first cell.

12. Transporting the substrate from one or more first process chambers to one or more second process chambers is Unloading the substrate from a first carrier configured to transport multiple substrates, The substrate is placed inside a second carrier configured to transport multiple substrates. A substrate processing system according to claim 1, including the above.

13. One or more first process chambers configured to deposit one or more first layers on a substrate to at least partially form first cells of a tandem cell structure, One or more second process chambers configured to deposit one or more second layers on the substrate to at least partially form the second cells of the tandem cell structure, A substrate transport mechanism configured to transport the substrate between the one or more first process chambers and the one or more second process chambers. A system equipped with these features.

14. A metal printing subsystem is configured to deposit one or more first metal electrodes on the first side of the substrate and one or more second metal electrodes on the second side of the substrate. The system according to claim 13, further comprising:

15. The system according to claim 13, wherein the one or more first process chambers and the one or more second process chambers are configured to carry out one of the following: a chemical vapor deposition (CVD) procedure, a physical vapor deposition (PVD) procedure, or an evaporation deposition procedure.

16. The system according to claim 15, wherein one of the second process chambers is configured to deposit a perovskite layer on the substrate.

17. Transporting the substrate from one or more first process chambers to one or more second process chambers is Unloading the substrate from a first carrier configured to transport multiple substrates, The substrate is inverted from a first orientation to a second orientation, The substrate is placed inside a second carrier configured to transport multiple substrates. The system according to claim 1, including the following:

18. Depositing one or more first layers on a substrate in one or more first process chambers to form at least partially first cells of a tandem cell structure, Transporting a substrate from one or more first process chambers to one or more second process chambers, Depositing one or more second layers on the substrate in one or more second process chambers to form at least partially the second cells of the tandem cell structure. Methods that include...

19. The method according to claim 18, wherein the tandem cell structure comprises the second cell disposed on top of the first cell.

20. Depositing a perovskite layer on the substrate in one of the one or more second process chambers. The method according to claim 18, further comprising:

Images