Conductive film, touch member, and method for manufacturing the same.

Abstract

The embodiments herein disclose conductive films, touch members, and methods for manufacturing them. The conductive film comprises a base film and a conductive layer covering the base film. The conductive layer comprises one or more conductive regions, at least one of which comprises a conductive grid structure, the conductive grid structure comprising a plurality of hollow grids and conductive grid lines.

Description

Technical Field

[0001] This specification relates to the technical field of touch, and particularly to conductive films, touch members, and methods for manufacturing them.

[0002] [Cross-reference to Related Applications] This application claims priority to Chinese Application No. 202310602223.4 filed on May 25, 2023, and Chinese Application No. 202310601509.0 filed on May 25, 2023, and all of their contents are incorporated herein by reference.

Background Art

[0003] With the development of science and technology, touch interaction has become one of the important ways of human-computer interaction and is widely applied in fields such as smart homes, smart household appliances, healthcare, self-service supermarkets, commercial advertising, smart logistics, smart payment, industrial control, and in-vehicle displays.

[0004] Generally, the conductive film of the touch member (e.g., touch screen) of a touch interaction device is required to have excellent optical performance (e.g., high light transmittance, low haze).

[0005] In addition, the touch member needs to be processed based on the conductive film. If the existing conductive film is used for processing the touch pattern and lead wires of the touch member in subsequent processes, the manufacturing of the touch member will become complicated.

Summary of the Invention

Problems to be Solved by the Invention

[0006] Therefore, there is a need to provide a conductive film having excellent optical performance and a method for manufacturing the same, as well as a touch member having a simple manufacturing process and a method for manufacturing the same.

Means for Solving the Problems

[0007] One embodiment of this specification provides a conductive film.

[0008] The conductive film comprises a base film and a conductive layer covering the base film, the conductive layer comprising one or more conductive regions, at least one of which comprises a conductive grid structure, and the conductive grid structure comprising a plurality of hollow grids and conductive grid lines.

[0009] In some embodiments, the conductive layer includes a plurality of conductive regions, the plurality of conductive regions being configured to include a first conductive region and a second conductive region, the first conductive region including the conductive grid structure, the second conductive region being positioned surrounding the first conductive region, the second conductive region being connected to the conductive grid lines, and the surface resistivity of the first conductive region being greater than the surface resistivity of the second conductive region.

[0010] In some embodiments, the conductive layer has at least two first conductive regions, and a second conductive region is located between two adjacent first conductive regions.

[0011] In some embodiments, the at least two first conductive regions are arranged in an array, and the shape of the first conductive regions is circular or polygonal.

[0012] In some embodiments, the minimum distance between two adjacent first conductive regions is 200 mm to 350 mm.

[0013] In some embodiments, the ratio of the surface resistivity of the first conductive region to the surface resistivity of the second conductive region is 5 or more, the surface resistivity of the first conductive region is 5Ω / □ to 150Ω / □, and the surface resistivity of the second conductive region is 0.1Ω / □ to 50Ω / □.

[0014] In some embodiments, the visible light transmittance of the base film and the first conductive region is greater than the visible light transmittance of the base film and the second conductive region, where the visible light transmittance of the base film and the first conductive region is 80% to 92%, and the visible light transmittance of the base film and the second conductive region is 20% to 90%.

[0015] In some embodiments, the conductive grid structure is formed by photolithographic etching of the conductive layer.

[0016] In some embodiments, the conductive layer includes a conductive nanolayer, the conductive nanolayer includes at least one of a metal nanolayer or a metal nanowire layer, the metal nanolayer includes at least one of gold nano, silver nano, copper nano, platinum nano, palladium nano, aluminum nano, tin nano, lead nano, or titanium nano, and the metal nanowire layer includes at least one of silver nanowire, gold nanowire, copper nanowire, platinum nanowire, aluminum nanowire, titanium nanowire, or tin nanowire.

[0017] In some embodiments, the conductive layer includes a metal nanowire layer and a conductive protective layer, and the hollow lattice is formed by etching the metal nanowire layer and the conductive protective layer by photolithography etching.

[0018] In some embodiments, the light transmittance of the base film and the conductive layer that is not photolithograph-etched is 20% to 90%.

[0019] In some embodiments, the sheet resistance of the base film and the conductive layer that is not photolithograph-etched is 0.1Ω / □ to 50Ω / □.

[0020] In some embodiments, the thickness of the conductive layer that is not photolithograph-etched is 50 nm to 300 nm.

[0021] In some embodiments, the haze of the base film and the conductive layer that is not photolithographically etched is 1.0% to 30%.

[0022] In some embodiments, the conductive protective layer includes a polymer layer with a thickness of 0.5 nm to 10 nm.

[0023] In some embodiments, the conductive protective layer includes a metal oxide layer with a thickness of 10 nm to 50 nm.

[0024] In some embodiments, for each of the conductive regions including a conductive grid structure, the ratio of the total area of the plurality of hollow grids to the area of the corresponding conductive region is 60% or more and 97% or less.

[0025] In some embodiments, the width of the conductive grid line is 3 μm to 30 μm.

[0026] In some embodiments, the maximum period of the conductive grid structure is 60% or less of the pixel array period of the display device using the conductive film.

[0027] In some embodiments, the material of the base film includes one or a combination of multiple types selected from polyester, cycloolefin polymer, colorless polyimide, polypropylene, polyethylene, triacetyl cellulose, PETG, TPU, PVA, and PC.

[0028] In some embodiments, the conductive layer further includes colored particles with a particle size of 0.05 μm to 1.0 μm.

[0029] In some embodiments, the light transmittance of the base film and the conductive region including the conductive grid structure is 80% or more.

[0030] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure is 5 Ω / □ to 150 Ω / □.

[0031] In some embodiments, the haze of the conductive region, including the base film and the conductive grid structure, is 0.8% to 4.0%.

[0032] In some embodiments, at least a portion of the conductive protective layer is located in the lattice gaps formed by the metal nanowires within the metal nanowire layer.

[0033] In some embodiments, at least a portion of the metal nanowire layer protrudes from the conductive protective layer.

[0034] In some embodiments, the thickness of the conductive protective layer is 30% to 110% of the thickness of the metal nanowire layer.

[0035] In some embodiments, the thickness of the conductive protective layer is 30% to 80% of the thickness of the metal nanowire layer.

[0036] In some embodiments, the thickness of the conductive protective layer is 50% to 80% of the thickness of the metal nanowire layer.

[0037] One embodiment of this specification further provides a method for manufacturing a conductive film.

[0038] The method comprises the steps of forming a conductive layer on a base film and etching the conductive layer to obtain a conductive film, wherein the conductive layer includes one or more conductive regions, at least one of which includes a conductive grid structure, and the conductive grid structure includes a plurality of hollow grids and conductive grid lines.

[0039] In some embodiments, the conductive layer includes a plurality of conductive regions, the plurality of conductive regions are configured to include a first conductive region having the conductive grid structure, and the step of etching the conductive layer includes forming the first conductive region having the conductive grid structure in the conductive layer by photolithographic etching.

[0040] In some embodiments, the conductive layer includes a metal nanowire layer and a conductive protective layer, and the hollow lattice is formed by etching the metal nanowire layer and the conductive protective layer by photolithography etching.

[0041] One embodiment of this specification further provides a touch member.

[0042] The touch member includes the aforementioned conductive film.

[0043] In some embodiments, the plurality of conductive regions are configured to include a first conductive region and a second conductive region, the first conductive region including the conductive grid structure, the second conductive region being positioned surrounding the first conductive region, the second conductive region being connected to the conductive grid lines, and the touch member including a touch pattern and lead wires, the touch pattern being formed in the first conductive region and the lead wires being formed in the second conductive region.

[0044] In some embodiments, the light transmittance of the touch member is 80% or more.

[0045] In some embodiments, the haze of the touch member is 1.0% to 4.0%.

[0046] One embodiment of this specification further provides a method for manufacturing a touch member.

[0047] The method uses the conductive film described above, wherein the plurality of conductive regions are configured to include a first conductive region and a second conductive region, the first conductive region includes the conductive grid structure, the second conductive region is installed surrounding the first conductive region, and the second conductive region is connected to the conductive grid lines, and the method includes the steps of forming a touch pattern of the touch member in the first conductive region by laser etching and forming lead lines of the touch member in the second conductive region by laser etching.

[0048] The present invention is further described by exemplary embodiments, which are described in detail with reference to the drawings.

[0049] These embodiments are not limiting, and in these embodiments, the same number represents the same structure. [Brief explanation of the drawing]

[0050] [Figure 1A] This is a block diagram of an exemplary conductive film relating to some of the embodiments described herein. [Figure 1B] This is an exemplary top view of a conductive film relating to some embodiments of this specification. [Figure 1C] This is an exemplary top view of a conductive film according to other embodiments of this specification. [Figure 2] This is a partially enlarged view of area A in Figures 1B and 1C. [Figure 3] Figures 1B and 1C are cross-sectional views of the conductive region BB, which includes the conductive grid structure. [Figure 4] This is a cross-sectional view of CC in the second conductive region in Figure 1C. [Figure 5] These are micrographs of exemplary conductive regions, including a conductive grid structure, according to some examples of this specification. [Figure 6] This is a micrograph of an exemplary conductive region including a conductive grid structure, relating to other embodiments of this specification. [Figure 7] This is a micrograph of an exemplary conductive region including a conductive grid structure, relating to other embodiments of this specification. [Modes for carrying out the invention]

[0051] To more clearly explain the technical means of the embodiments of this application, the drawings necessary for describing the embodiments are briefly described below.

[0052] Clearly, the drawings described below are only examples or embodiments of the present application, and those skilled in the art can apply the present application to other similar scenarios based on these drawings without requiring any creative effort.

[0053] Unless otherwise stated or the context makes it clear, the same number in the diagram represents the same structure or operation.

[0054] As shown in the present application and claims, unless the context explicitly indicates otherwise, terms such as “one,” “one,” “one type,” and / or “the” do not specifically refer to the singular form, but may include the plural form.

[0055] Generally, the terms "includes" and "contains" merely indicate the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list; the method or apparatus may include other steps or elements.

[0056] One embodiment of this specification provides a conductive film.

[0057] The conductive film includes a base film and a conductive layer that covers the base film.

[0058] The conductive layer includes one or more conductive regions, at least one of which includes a conductive grid structure.

[0059] The conductive grid structure includes a plurality of hollow grids and conductive grid lines.

[0060] In this specification, the base film serves to support the conductive layer.

[0061] One or more conductive regions are provided in the conductive layer, and at least one of these conductive regions includes a conductive grid structure. The conductive grid lines of the conductive grid structure can achieve conductivity, and the hollow grid of the conductive grid structure improves optical problems such as whitening, yellowing, or clouding present in the conductive layer itself, thereby giving the conductive film excellent optical performance (e.g., high light transmittance, low haze).

[0062] The conductive film can be used in the manufacture of touch components.

[0063] The touch member using the conductive film also has excellent optical performance.

[0064] Figure 1A is a block diagram of an exemplary conductive film according to some embodiments of this specification.

[0065] Figure 1B is a top view of an exemplary conductive film relating to some embodiments of this specification.

[0066] Figure 1C is a top view of an exemplary conductive film according to another embodiment of this specification; Figure 2 is a partially enlarged view of region A in Figures 1B and 1C; Figure 3 is a cross-sectional view of the conductive region BB including the conductive grid structure in Figures 1B and 1C; and Figure 4 is a cross-sectional view of the second conductive region CC in Figure 1C.

[0067] As shown in Figure 1A, the conductive film 100 may include a base film 110 and a conductive layer 120.

[0068] As shown in Figures 3 and 4, the conductive layer 120 covers the base film 110.

[0069] The conductive layer 120 may include one or more conductive regions.

[0070] In some embodiments, the conductive layer 120 may include a single conductive region, as shown in Figure 1B.

[0071] The conductive region substantially covers the entire base film.

[0072] In some embodiments, as shown in Figure 1C, the conductive layer 120 may include at least two conductive regions.

[0073] If the conductive layer 120 includes a plurality of conductive regions (which may be understood as at least two conductive regions), the plurality of conductive regions can be configured to include a first conductive region 121 and a second conductive region 122.

[0074] As shown in Figure 1C, the conductive layer 120 includes a first conductive region 121 and a second conductive region 122.

[0075] In some embodiments, the conductive layer 120 may further include at least one other conductive region (e.g., a third conductive region) that has different performance from the first conductive region 121 and / or the second conductive region 122.

[0076] For example, the conductive layer 120 may include a first conductive region 121, a second conductive region 122, and a third conductive region.

[0077] Furthermore, for example, the conductive layer 120 may include a first conductive region 121 and a third conductive region.

[0078] The embodiments herein do not limit the combination of the number, performance, and other properties of the multiple conductive regions.

[0079] As shown in Figure 1A, at least one conductive region includes a conductive grid structure 1210.

[0080] The conductive grid structure 1210 may include a plurality of hollow lattices 1211 and conductive grid lines 1212.

[0081] In the embodiments of this specification, the first conductive region 121 is configured to include a conductive grid structure, or is a conductive region including a conductive grid structure.

[0082] As shown in Figure 1B, the conductive region, which includes the conductive grid structure, substantially covers the entire base film.

[0083] To make it clear, the entire conductive film shown in Figure 1B is substantially a conductive region containing a conductive grid structure, also known as the first conductive region, or may be understood as the first conductive region 121 in Figure 1C.

[0084] As shown in Figure 1C, the second conductive region 122 is positioned surrounding the first conductive region 121.

[0085] The transmission of signals (e.g., electrical signals) is realized when the second conductive region 122 is connected to the conductive grid line 1212 of the first conductive region 121.

[0086] The surface resistivity of the first conductive region 121 is greater than the surface resistivity of the second conductive region 122.

[0087] The first conductive region 121 is used to form a touch pattern on the touch electrode, and the second conductive region 122 is used to form lead wires on the touch electrode. Since the surface resistivity of the second conductive region 122 is lower than that of the first conductive region 121, it is guaranteed that the conductivity of the second conductive region 122 is higher than that of the first conductive region 121, thereby enabling signal transmission.

[0088] The first conductive region 121 becomes a conductive grid structure because the conductive layer 120 has been photolithographically etched, resulting in a higher surface resistivity. This means that the light transmittance of the first conductive region 121 is improved, which can improve the light transmittance and appearance of the touch electrode when forming a touch pattern.

[0089] The first conductive region 121 is a region of the conductive layer 120 that has been photolithographically etched, and the second conductive region 122 is a region of the conductive layer 120 that has not been photolithographically etched.

[0090] For a description of photolithography etching, please refer to other parts of this specification; a detailed explanation is omitted here.

[0091] The covering of the base film 110 by the conductive layer 120 may be understood as the covering of one surface of the base film 110 by the conductive layer 120.

[0092] For example, the conductive layer 120 may cover the top of the base film 110.

[0093] In this specification, "upward" may mean the direction toward the outside of the touch electrode when the conductive film 100 is used as a touch electrode.

[0094] In some embodiments, the material of the base film 110 may include one or a combination of several of the following: polyester, cycloolefin polymer (COP), colorless polyimide (CPI), polypropylene (PP), polyethylene (PE), tricellulose acetate (TCA), cyclohexane-1,4-diyldimethanol-dimethyl terephthalate-ethylene glycol polymer (PETG), thermoplastic polyurethane (TPU), polyvinyl alcohol (PVA), and polycarbonate (PC).

[0095] In some embodiments, the polyester may include, but is not limited to, polyethylene terephthalate (PET).

[0096] In some embodiments, the base film 110 may include a treated base film.

[0097] In some embodiments, the treatment may include at least one of the following: anti-reflective treatment, anti-reflective treatment, hardening treatment, or anti-glare treatment.

[0098] In some embodiments, at least one of anti-reflective treatment, anti-reflective treatment, hardening treatment, or anti-glare treatment may be achieved by coating.

[0099] In some embodiments, the anti-reflective treatment can improve the light transmittance of the base film.

[0100] In some embodiments, the reflection reduction treatment can reduce the reflection of light by the base film, thereby further improving the light transmittance of the base film.

[0101] In some embodiments, the curing treatment can improve the hardness of the base film.

[0102] For example, through a hardening treatment, the surface hardness of the base film can reach 3H or higher.

[0103] In some embodiments, anti-glare treatment can make the surface of the film material a matte diffuse reflective surface, thereby reducing the interference that external light rays have on the human eye.

[0104] In some embodiments, the thickness of the base film may be 13 μm to 300 μm.

[0105] In some embodiments, the thickness of the base film may be 30 μm to 280 μm.

[0106] In some embodiments, the thickness of the base film may be 50 μm to 250 μm.

[0107] In some embodiments, the thickness of the base film may be 70 μm to 230 μm.

[0108] In some embodiments, the thickness of the base film may be 90 μm to 200 μm.

[0109] In some embodiments, the thickness of the base film may be 110 μm to 180 μm.

[0110] In some embodiments, the thickness of the base film may be 130 μm to 150 μm.

[0111] In some embodiments, the thickness of the base film may be 20 μm, 40 μm, 60 μm, 80 μm, 100 μm, 120 μm, 140 μm, 160 μm, 180 μm, 200 μm, 220 μm, 240 μm, 260 μm, 280 μm, or 300 μm, etc.

[0112] For further details regarding the first conductive region 121, the conductive layer 120, and the conductive grid structure 1210, please refer to the following and other parts of this specification (for example, Figures 2 to 7 and their related descriptions).

[0113] In some embodiments, as shown in Figure 1C, the conductive layer 120 may have at least two first conductive regions 121.

[0114] For example, the number of first conductive regions 121 may be 2, 3, 4, 6, or 9.

[0115] In some embodiments, the shape of the first conductive region 121 may be a regular shape such as a circle or polygon (e.g., triangle, square, rectangle, rhombus, hexagon, octagon).

[0116] In some embodiments, the shapes of at least two first conductive regions 121 may be the same or different.

[0117] In some embodiments, at least two first conductive regions 121 may be arranged in an array to improve the utilization rate of the conductive film 100.

[0118] In some embodiments, the array may include, but is not limited to, a rectangular array (abbreviated as “matrix”), a circular array, and the like.

[0119] In some embodiments, a matrix may be represented as m (rows) × n (columns), where m and n are both integers greater than or equal to 1.

[0120] For example, the four first conductive regions 121 may be arranged in a 1x4 matrix or a 2x2 matrix.

[0121] Furthermore, for example, the eight first conductive regions 121 may be arranged in a 1×8 matrix, a 2×4 matrix, a 4×2 matrix, or an 8×1 matrix.

[0122] Furthermore, as shown in Figure 1C, for example, the nine first conductive regions 121 may be arranged in a 3x3 matrix.

[0123] In some embodiments, at least two first conductive regions 121 may be arranged irregularly.

[0124] In some embodiments, the size of the first conductive region 121 may range from 1 inch to 21.5 inches.

[0125] In some embodiments, the size of the first conductive region 121 may be between 2 inches and 21 inches.

[0126] In some embodiments, the size of the first conductive region 121 may be between 3 inches and 20 inches.

[0127] In some embodiments, the size of the first conductive region 121 may be 4 inches to 19 inches.

[0128] In some embodiments, the size of the first conductive region 121 may be between 5 inches and 18 inches.

[0129] In some embodiments, the size of the first conductive region 121 may be 6 inches to 17 inches.

[0130] In some embodiments, the size of the first conductive region 121 may be 7 inches to 16 inches.

[0131] In some embodiments, the size of the first conductive region 121 may be 8 inches to 15 inches.

[0132] In some embodiments, the size of the first conductive region 121 may be 9 inches to 14 inches.

[0133] In some embodiments, the size of the first conductive region 121 may be 10 to 13 inches.

[0134] In some embodiments, the size of the first conductive region 121 may be 11 to 12 inches.

[0135] In some embodiments, the size of the first conductive region 121 may be 1 inch, 3.5 inches, 5 inches, 5.5 inches, 8.9 inches, 10.1 inches, 13.4 inches, 14 inches, 15.6 inches, 17 inches, or 21.5 inches, etc.

[0136] In some embodiments, the performance of at least two first conductive regions 121 may be the same or different.

[0137] In some embodiments, performance may include, but is not limited to, size, surface resistivity, visible light transmittance, and haze.

[0138] In some embodiments, the conductive region including the conductive grid structure (for example, the conductive film 120 shown in Figure 1B or the first conductive region 121 shown in Figure 1C) may be formed by photolithographic etching of the conductive layer 120 to obtain the conductive grid structure.

[0139] To make it easier to understand, the conductive grid structure is formed by photolithographic etching of the conductive layer 120.

[0140] In some embodiments, photolithography etching may include, but is not limited to, at least one of oxidative corrosion and acid corrosion.

[0141] For example, photolithography etching may include oxidative corrosion and acid corrosion.

[0142] In some embodiments, the etching solution may include, but is not limited to, hydrochloric acid-nitric acid-based etching solutions, iron chloride-based etching solutions, iron nitrate-based etching solutions, iron nitrate-nitric acid-based etching solutions, and phosphoric acid-nitric acid-acetic acid-based etching solutions.

[0143] The hydrochloric acid-nitric acid etching solution contains 35 wt% to 50 wt% hydrochloric acid, 5 wt% to 15 wt% nitric acid, and 1 wt% to 10 wt% additives, with the remainder being deionized water.

[0144] Additives include, but are not limited to, side etching inhibitors, smoke suppressants, surfactants, and defoamers.

[0145] The iron chloride-based etching solution contains 28 wt% to 45 wt% iron chloride, 5 wt% to 20 wt% hydrochloric acid, 0.05 wt% to 5 wt% chloride, 0.01 wt% to 0.1 wt% surfactant, and 0.5 wt% to 3 wt% side etching inhibitor, with the remainder being deionized water.

[0146] The iron nitrate-based etching solution contains 20 wt% to 70 wt% of nonahydrated iron nitrate, 5 wt% to 15 wt% of nitric acid, and 1 wt% to 10 wt% of additives, with the remainder being deionized water.

[0147] Additives include, but are not limited to, side etching inhibitors, smoke suppressants, surfactants, and defoamers.

[0148] The phosphoric acid-nitric acid-acetic acid etching solution contains 2 wt% to 10 wt% nitric acid, 50 wt% to 80 wt% phosphoric acid, 15 wt% to 30 wt% acetic acid, and 2.5 wt% to 7 wt% additives, with the remainder being deionized water.

[0149] Additives include, but are not limited to, side etching inhibitors, surfactants, and defoamers.

[0150] In some embodiments, the side etching inhibitor may include, but is not limited to, a hydroxyphosphate corrosion inhibitor.

[0151] In some embodiments, the smoke suppressant, surfactant, and defoamer may be additives commonly used in this field, and their description is omitted here.

[0152] The mass fractions of hydrochloric acid, nitric acid, and phosphoric acid in the above etching solution are 36 wt%, 68 wt%, and 85 wt%, respectively.

[0153] The region on the conductive layer 120 that is not photolithographically etched is the second conductive region 122.

[0154] In some embodiments, as shown in Figure 1C, the second conductive region 122 may be positioned surrounding the first conductive region 121, which facilitates the formation of a touch electrode by forming a touch pattern for the touch electrode in the first conductive region 121 and a lead wire for the touch electrode in the second conductive region 122.

[0155] In some embodiments, a second conductive region 122 may be placed between two adjacent first conductive regions 121, thereby facilitating the manufacture of each first conductive region 121 on the conductive film 100 and the second conductive region 122 surrounding each first conductive region 121 as a single touch electrode.

[0156] In some embodiments, any two first conductive regions 121 do not intersect, and there is a gap between two adjacent first conductive regions 121.

[0157] In some embodiments, the minimum distance between two adjacent first conductive regions 121 (shown as d in Figure 1C) may be understood as the minimum distance between two adjacent first conductive regions 121.

[0158] The spacing between two adjacent first conductive regions 121 affects the utilization rate of the conductive film 100 and the subsequent manufacturing of the touch electrode.

[0159] For example, if the distance between two adjacent first conductive regions 121 is too small, it becomes difficult to manufacture the lead wires for the touch electrodes, or even impossible to manufacture two lead wires within that distance. As a result, it becomes impossible to manufacture two touch electrodes, and furthermore, the utilization rate of the conductive film 100 is reduced.

[0160] Furthermore, if the gap between two adjacent first conductive regions 121 is too large, waste will occur, and the utilization rate of the conductive film 100 will be low.

[0161] In some embodiments, to improve the utilization rate of the conductive film 100 and facilitate the subsequent manufacturing of touch electrodes (or lead wires), the minimum distance between two adjacent first conductive regions 121 is 200 mm to 350 mm.

[0162] In some embodiments, the minimum distance between two adjacent first conductive regions 121 may be 220 mm to 330 mm.

[0163] In some embodiments, the minimum distance between two adjacent first conductive regions 121 may be 240 mm to 310 mm.

[0164] In some embodiments, the minimum distance between two adjacent first conductive regions 121 may be 260 mm to 290 mm.

[0165] In some embodiments, the minimum distance between two adjacent first conductive regions 121 may be 200 mm to 330 mm.

[0166] In some embodiments, the minimum distance between two adjacent first conductive regions 121 may be 200 mm to 300 mm.

[0167] In some embodiments, the minimum distance between two adjacent first conductive regions 121 may be 200 mm to 250 mm.

[0168] In some embodiments, the ratio of the surface resistivity of the first conductive region 121 to the surface resistivity of the second conductive region 122 may be 5 or more.

[0169] In some embodiments, the ratio of the surface resistivity of the first conductive region 121 to the surface resistivity of the second conductive region 122 may be 10 or more.

[0170] In some embodiments, the ratio of the surface resistivity of the first conductive region 121 to the surface resistivity of the second conductive region 122 may be 15 or more.

[0171] In some embodiments, the ratio of the surface resistivity of the first conductive region 121 to the surface resistivity of the second conductive region 122 may be 20 or more.

[0172] In some embodiments, the ratio of the surface resistivity of the first conductive region 121 to the surface resistivity of the second conductive region 122 may be 25 or greater.

[0173] In some embodiments, the ratio of the surface resistivity of the first conductive region 121 to the surface resistivity of the second conductive region 122 may be 30 or more.

[0174] In some embodiments, the ratio of the surface resistivity of the first conductive region 121 to the surface resistivity of the second conductive region 122 may be 35 or greater.

[0175] In some embodiments, the ratio of the surface resistivity of the first conductive region 121 to the surface resistivity of the second conductive region 122 may be 40 or more.

[0176] In some embodiments, the ratio of the surface resistivity of the first conductive region 121 to the surface resistivity of the second conductive region 122 may be 45 or greater.

[0177] In some embodiments, the ratio of the surface resistivity of the first conductive region 121 to the surface resistivity of the second conductive region 122 may be 50 or more.

[0178] In some embodiments, the surface resistivity of the first conductive region 121 (or conductive region including a conductive grid structure) may be 5Ω / □ to 150Ω / □.

[0179] In some embodiments, the surface resistivity of the first conductive region 121 may be 10Ω / □ to 140Ω / □.

[0180] In some embodiments, the surface resistivity of the first conductive region 121 may be 15Ω / □ to 130Ω / □.

[0181] In some embodiments, the surface resistivity of the first conductive region 121 may be 20 Ω / □ to 120 Ω / □.

[0182] In some embodiments, the surface resistivity of the first conductive region 121 may be 25Ω / □ to 110Ω / □.

[0183] In some embodiments, the surface resistivity of the first conductive region 121 may be 30 Ω / □ to 100 Ω / □.

[0184] In some embodiments, the surface resistivity of the first conductive region 121 may be 35Ω / □ to 90Ω / □.

[0185] In some embodiments, the surface resistivity of the first conductive region 121 may be 40Ω / □ to 80Ω / □.

[0186] In some embodiments, the surface resistivity of the first conductive region 121 may be 45Ω / □ to 70Ω / □.

[0187] In some embodiments, the surface resistivity of the first conductive region 121 may be 50Ω / □ to 60Ω / □.

[0188] In some embodiments, the surface resistivity of the first conductive region 121 may be 5Ω / □, 20Ω / □, 50Ω / □, 80Ω / □, 100Ω / □, 120Ω / □, or 150Ω / □, etc.

[0189] In some embodiments, the surface resistivity of the second conductive region 122 may be 0.1 Ω / □ to 50 Ω / □.

[0190] In some embodiments, the surface resistivity of the second conductive region 122 may be 0.1 Ω / □ to 40 Ω / □.

[0191] In some embodiments, the surface resistivity of the second conductive region 122 may be 0.1 Ω / □ to 30 Ω / □.

[0192] In some embodiments, the surface resistivity of the second conductive region 122 may be 0.1 Ω / □ to 20 Ω / □.

[0193] In some embodiments, the surface resistivity of the second conductive region 122 may be 0.1Ω / □ to 10Ω / □.

[0194] In some embodiments, the surface resistivity of the second conductive region 122 may be 0.5Ω / □ to 9Ω / □.

[0195] In some embodiments, the surface resistivity of the second conductive region 122 may be 1Ω / □ to 8Ω / □.

[0196] In some embodiments, the surface resistivity of the second conductive region 122 may be 1.5Ω / □ to 7Ω / □.

[0197] In some embodiments, the surface resistivity of the second conductive region 122 may be 2Ω / □ to 6Ω / □.

[0198] In some embodiments, the surface resistivity of the second conductive region 122 may be 2.5Ω / □ to 5Ω / □.

[0199] In some embodiments, the surface resistivity of the second conductive region 122 may be 3Ω / □ to 4Ω / □.

[0200] In some embodiments, the surface resistivity of the second conductive region 122 may be 0.1 Ω / □, 1 Ω / □, 2 Ω / □, 5 Ω / □, 8 Ω / □, or 10 Ω / □, etc.

[0201] By setting the ratio of the surface resistivity of the first conductive region 121 to the surface resistivity of the second conductive region 122 to 5 or more, the conductivity of the second conductive region 122 is clearly superior to that of the first conductive region 121, and as a result, the second conductive region 122 can be used for forming lead wires in subsequent processes.

[0202] The surface resistivity of the first conductive region 121 can be set to 5Ω / □ to 150Ω / □, and the surface resistivity of the second conductive region 122 can be set to 0.1Ω / □ to 50Ω / □. For the touch electrode, given the condition of satisfying the signal transmission of the touch pattern, it is preferable that the light transmittance of the touch pattern region is as high as possible and the haze is as low as possible. The lead wire region of the touch electrode has no requirements for optical performance, but it is preferable that its conductivity is as high as possible.

[0203] Therefore, the optical performance of the first conductive region 121 can be improved by designing the hollow lattice as much as possible, provided that the signal transmission of the touch pattern is guaranteed.

[0204] Furthermore, the base film has almost no effect on the performance test of the surface resistivity of the conductive layer.

[0205] The surface resistivity of the base film and the first conductive region as a single unit is approximately equal to the surface resistivity of the first conductive region.

[0206] The surface resistivity of the base film and the second conductive region as a single unit is approximately equal to the surface resistivity of the second conductive region.

[0207] In some embodiments, the visible light transmittance of the base film and the first conductive region 121 is greater than the visible light transmittance of the base film and the second conductive region 122.

[0208] Photolithography etching can improve the visible light transmittance of the first conductive region 121, and by setting a higher visible light transmittance of the first conductive region 121, it is possible to guarantee the function of subsequently forming a touch pattern on the first conductive region 121.

[0209] The visible light transmittance of the second conductive region 122, which is not photolithographically etched, is low. This means that the conductive performance of the conductive layer 120 is not affected, and it can be guaranteed that the second conductive region 122 has excellent conductive performance.

[0210] Furthermore, the base film affects the visible light transmittance and haze tests of the conductive layer.

[0211] For example, the visible light transmittance of the first conductive region refers to the visible light transmittance when the base film and the first conductive region are considered as a single unit.

[0212] For example, the visible light transmittance of the second conductive region refers to the visible light transmittance when the base film and the second conductive region are considered as a single unit.

[0213] In some embodiments, the visible light transmittance of the base film and the first conductive region 121 (or conductive region including a conductive grid structure) may be 80% to 92%.

[0214] In some embodiments, the visible light transmittance of the base film and the first conductive region 121 may be 80% to 90%.

[0215] In some embodiments, the visible light transmittance of the base film and the first conductive region 121 may be 83% to 88%.

[0216] In some embodiments, the visible light transmittance of the base film and the first conductive region 121 may be 84% to 86%.

[0217] In some embodiments, the visible light transmittance of the base film and the first conductive region 121 may be 80%, 85%, 90%, or 92%.

[0218] In some embodiments, the visible light transmittance of the base film and the second conductive region 122 may be 20% to 90%.

[0219] In some embodiments, the visible light transmittance of the base film and the second conductive region 122 may be 20% to 85%.

[0220] In some embodiments, the visible light transmittance of the base film and the second conductive region 122 may be 30% to 80%.

[0221] In some embodiments, the visible light transmittance of the base film and the second conductive region 122 may be 40% to 75%.

[0222] In some embodiments, the visible light transmittance of the base film and the second conductive region 122 may be 50% to 70%.

[0223] In some embodiments, the visible light transmittance of the base film and the second conductive region 122 may be 60% to 65%.

[0224] In some embodiments, the visible light transmittance of the base film and the second conductive region 122 may be 20%, 30%, 40%, 50%, 60%, 70%, or 80%.

[0225] The visible light transmittance of the base film and the first conductive region 121 can be set to 80% to 92%, and the visible light transmittance of the base film and the second conductive region 122 can be set to 20% to 90%. By setting the visible light transmittance of the base film and the first conductive region 121 in this way, the basic requirements for the light transmittance of the touch electrode region can be met. The second conductive region 122 for conductivity can also transmit visible light, and the conductive grid lines 1212 inside the first conductive region 121 obtained by making the second conductive region 122 hollow can also transmit visible light. This avoids the appearance problems of moiré or granular noise that occur with conventional solid (opaque) conductive grid lines in subsequent specific applications, while improving the light transmittance of the base film and the first conductive region 121 and improving optical performance.

[0226] As shown in Figures 2 and 3, the hollow lattice 1211 is formed by etching the conductive layer 120 by photolithography etching.

[0227] The conductive layer 120 that is not photolithographically etched is the conductive grid line 1212.

[0228] For each conductive region containing a conductive grid structure (for example, the conductive film 120 shown in Figure 1B or the first conductive region 121 shown in Figure 1C), the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region (for example, the conductive film 120 shown in Figure 1B or the first conductive region 121 shown in Figure 1C) affects the conductivity and optical performance of the conductive region (for example, the conductive film 120 shown in Figure 1B or the first conductive region 121 shown in Figure 1C).

[0229] For example, if the ratio S of the sum of the areas of the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region is too small for each conductive region containing a conductive grid structure, the optical performance of the conductive region (e.g., the first conductive region 121) will be reduced (e.g., light transmittance will be low and haze will be high).

[0230] Furthermore, for example, if the ratio S of the sum of the areas of the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region is too large for each conductive region including a conductive grid structure, the conductivity of that conductive region (for example, the first conductive region 121) will be reduced.

[0231] Therefore, in some embodiments, in order to improve the optical performance and conductivity of each conductive region (e.g., the first conductive region 121) including the conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region (e.g., the first conductive region 121) must satisfy certain requirements.

[0232] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 60% or more and 97% or less.

[0233] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 65% or more and 95% or less.

[0234] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 70% or more and 90% or less.

[0235] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 75% or more and 85% or less.

[0236] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 80% or more and 85% or less.

[0237] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 60% or more and 95% or less.

[0238] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 60% or more and 90% or less.

[0239] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 60% or more and 85% or less.

[0240] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 60% or more and 80% or less.

[0241] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 60% or more and 75% or less.

[0242] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 60% or more and 70% or less.

[0243] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 65% or more and 97% or less.

[0244] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 70% or more and 97% or less.

[0245] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 75% or more and 97% or less.

[0246] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 80% or more and 97% or less.

[0247] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 85% or more and 97% or less.

[0248] In some embodiments, for each conductive region including a conductive grid structure, the ratio S of the total area of ​​the multiple hollow lattices 1211 to the area of ​​the corresponding conductive region may be 90% or more and 97% or less.

[0249] Figure 5 is a micrograph of an exemplary conductive region including a conductive grid structure according to some embodiments of this specification.

[0250] Figure 6 is a micrograph of an exemplary conductive region including a conductive grid structure according to other embodiments of this specification.

[0251] Figure 7 is a micrograph of an exemplary conductive region including a conductive grid structure according to other embodiments of this specification.

[0252] Figures 5, 6, and 7 may be understood as micrographs of the conductive film 100 shown in Figure 1B or the first conductive region 121 shown in Figure 1C.

[0253] To make it easier to understand, as shown in Figures 5, 6, and 7, for each conductive region containing a conductive grid structure, the sum of the areas of the multiple hollow lattices 1211 and the sum of the areas of the conductive grid lines 1212 is equal to the area of ​​the corresponding conductive region.

[0254] The conductive grid wire 1212 can be used to construct an ultrafine sensing circuit channel for the touch electrode.

[0255] In some embodiments, the conductive grid wire 1212 may be a continuous metal nanowire.

[0256] In some embodiments, the conductive grid lines 1212 include multiple metal nanowires that are irregularly distributed and connected to each other, on the premise that they do not affect the conductive paths of the conductive layer 120.

[0257] To make it easier to understand, the conductive grid wire 1212 may also be a conductive channel consisting of multiple metal nanowires connected in an overlapping manner.

[0258] In some embodiments, the conductive grid wire 1212 may be straight, curved, wavy, or the like.

[0259] In some embodiments, the shape of the grid formed by the conductive grid lines 1212 (which may be understood as the shape of the hollow grid 1211) may be polygonal.

[0260] For example, these include triangles, rhombuses (shown in Figure 2 or Figure 5), squares (shown in Figure 6 or Figure 7), and rectangles.

[0261] In other embodiments, the shape of the grid formed by the conductive grid lines 1212 (which may be understood as the shape of the hollow grid 1211) may be elliptical, circular, or irregular in shape.

[0262] In some embodiments, the grid formed by the conductive grid lines 1212 (which may be understood as a hollow grid 1211) may be arranged in an array.

[0263] In some embodiments, the conductive grid wires 1212 can form a grid of one or more shapes.

[0264] For example, any combination of circles and polygons.

[0265] In some embodiments, the width of the conductive grid wire 1212 (shown as w in Figures 2 and 3) may be 3 μm to 30 μm.

[0266] In some embodiments, the width of the conductive grid wire 1212 may be 5 μm to 28 μm.

[0267] In some embodiments, the width of the conductive grid wire 1212 may be 8 μm to 27 μm.

[0268] In some embodiments, the width of the conductive grid wire 1212 may be 10 μm to 25 μm.

[0269] In some embodiments, the width of the conductive grid wire 1212 may be 12 μm to 23 μm.

[0270] In some embodiments, the width of the conductive grid wire 1212 may be 15 μm to 20 μm.

[0271] In some embodiments, the width of the conductive grid wire 1212 may be 3 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, or 30 μm.

[0272] Since the conductive grid line 1212 can also transmit visible light (for example, with a light transmittance of 20% to 90%), if the width of the conductive grid line 1212 is in the range of 3 μm to 30 μm, it is possible not only to construct ultrafine sensing circuit channels for touch electrodes, but also to reduce the difficulty of photolithography etching and improve the efficiency of photolithography etching.

[0273] In the examples of this specification, light transmittance may refer to visible light transmittance.

[0274] To make it understandable, the structure of the second conductive region 122 is the same as the structure of the conductive layer (i.e., conductive grid lines 1212) in the first conductive region 121 that is not photolithographically etched.

[0275] Accordingly, the performance of the second conductive region 122 (e.g., light transmittance, haze, sheet resistance, etc.) is the same as that of the conductive layer in the first conductive region 121 that is not photolithographically etched.

[0276] Figure 4 may be understood as a DD cross-sectional view of the conductive grid line in Figure 3.

[0277] The maximum period of a conductive grid structure refers to the maximum distance between the geometric centers of adjacent hollow lattices.

[0278] As shown in Figure 2, L1 represents the maximum period of the conductive grid structure shown in Figure 2.

[0279] As shown in FIGS. 5 to 7, L2, L3, and L4 respectively represent the maximum period of the conductive grid structure shown in FIGS. 5 to 7.

[0280] In some embodiments, the maximum period of the conductive grid structure is 60% or less of the pixel array period of the display device using the conductive film.

[0281] For example, the maximum period of the conductive grid structure may be 60%, 55%, 50%, 45%, 40%, 35%, 30%, 25%, 20%, 15%, 10%, etc. of the pixel array period of the display device using the conductive film.

[0282] Taking an IPS screen with a size of 15.6 inches and a resolution of 1920×1080 as an example, the size of the effective display area of the 15.6-inch screen is 34.5 cm×19.5 cm. The pixel array period of the screen obtained by calculation is about 180 μm×180 μm, and the maximum period of the conductive grid structure in the conductive film is 108 μm (180 μm×60%) or less.

[0283] By setting it in this way, the optical appearance after attaching the touch member using the conductive film to the screen can be further improved.

[0284] Specifically, the touch screen has a uniform optical effect and / or invisible etching marks in the off state, and there is no granular noise and / or moiré in the on state.

[0285] In some embodiments, the conductive layer 120 may include a conductive nano layer 123.

[0286] In some embodiments, the conductive layer 120 may further include a conductive protective layer 124.

[0287] As can be understood, the conductive layer that is not photolithographically etched (for example, the conductive grid line 1212 shown in FIGS. 2 and 3 or the conductive layer 120 shown in FIG. 4) may include a conductive nano layer 123 and a conductive protection layer 124.

[0288] The hollow grid 1211 may be understood to be formed by etching the conductive nano layer 123 and the conductive protection layer 124 by photolithographic etching, or the hollow grid 1211 may substantially not include the conductive nano layer 123 and the conductive protection layer 124.

[0289] In some embodiments, as shown in FIGS. 3 and 4, the conductive nano layer 123 may be located below the conductive protection layer 124.

[0290] In some embodiments, the conductive nano layer 123 and the conductive protection layer 124 may be mixed (and may be understood not to be stratified) to form a conductive layer 120 that is not photolithographically etched.

[0291] In some embodiments, the conductive nano layer 123 may include at least one of a metal nano layer or a metal nanowire layer.

[0292] In some embodiments, when the conductive nano layer 123 includes a metal nano layer and a metal nanowire layer, the metal nano layer may be located above or below the metal nanowire layer.

[0293] In some embodiments, the thickness of the nano conductive layer 123 may be 100 nm to 500 nm.

[0294] In some embodiments, the thickness of the nano conductive layer 123 may be 150 nm to 450 nm.

[0295] In some embodiments, the thickness of the nano conductive layer 123 may be 200 nm to 400 nm.

[0296] In some embodiments, the thickness of the nanoconductive layer 123 may be 250 nm to 350 nm.

[0297] In some embodiments, the metal nanolayer may include at least one of gold nano, silver nano, copper nano, platinum nano, palladium nano, aluminum nano, tin nano, lead nano, or titanium nano.

[0298] In some embodiments, the metal nanolayer may include a film structure obtained by magnetron sputtering of metal nanoparticles (e.g., at least one of gold nanoparticles, silver nanoparticles, copper nanoparticles, platinum nanoparticles, palladium nanoparticles, aluminum nanoparticles, tin nanoparticles, lead nanoparticles, or titanium nanoparticles).

[0299] Since metal nanoparticles or their alloys have the effect of absorbing light in a specific wavelength range, the metal nanolayer can not only adjust the chromaticity of the conductive nanolayer 123 but also improve the conductivity of the resulting conductive film 100.

[0300] In some embodiments, the thickness of the metal nanolayer may be 3 nm to 10 nm.

[0301] In some embodiments, the thickness of the metal nanolayer may be 4 nm to 9 nm.

[0302] In some embodiments, the thickness of the metal nanolayer may be 5 nm to 8 nm.

[0303] In some embodiments, the thickness of the metal nanolayer may be 6 nm to 7 nm.

[0304] In some embodiments, the metal nanowire layer may include at least one of silver nanowires, gold nanowires, copper nanowires, platinum nanowires, aluminum nanowires, titanium nanowires, or tin nanowires.

[0305] In some embodiments, the metal nanowire layer may include a film structure obtained by coating it with a metal nanowire ink.

[0306] In some embodiments, the metal nanowires included in the metal nanowire ink may include at least one of silver nanowires, gold nanowires, copper nanowires, platinum nanowires, aluminum nanowires, titanium nanowires or tin nanowires.

[0307] In some embodiments, when the conductive nano-layer 123 is a metal nanowire layer, the conductive layer 120 includes a metal nanowire layer and a conductive protection layer 124.

[0308] As can be understood, the hollow lattice 1211 is formed by etching the metal nanowire layer and the conductive protection layer 124 by photolithography etching, or the hollow lattice 1211 substantially does not include the metal nanowire layer and the conductive protection layer 124.

[0309] The conductive protection layer 124 can protect the conductive nano-layer 123 from corrosion.

[0310] In some embodiments, the conductive protection layer 124 may include at least one of a polymer layer, a metal oxide layer or a graphene layer.

[0311] In some embodiments, the conductive protection layer 124 may include a polymer layer.

[0312] In some embodiments, the polymer layer may include a film structure obtained by coating and drying a protective liquid containing a polymer and then curing it.

[0313] In some embodiments, the protective liquid containing a polymer may include one or more of aliphatic polyurethane acrylate, aromatic polyurethane acrylate, polyurethane methacrylate, diallyl phthalate, epoxy acrylate and epoxy methacrylate, but is not limited thereto.

[0314] In some embodiments, when the conductive nanolayer 123 and the conductive protective layer 124 are arranged in a layered manner (for example, the conductive nanolayer 123 is located below the conductive protective layer 124), the thickness of the polymer layer may be 0.5 nm to 10 nm.

[0315] In some embodiments, the thickness of the polymer layer may be 1 nm to 9 nm.

[0316] In some embodiments, the thickness of the polymer layer may be 2 nm to 8 nm.

[0317] In some embodiments, the thickness of the polymer layer may be 3 nm to 7 nm.

[0318] In some embodiments, the thickness of the polymer layer may be 4 nm to 6 nm.

[0319] In some embodiments, the thickness of the polymer layer may be 4.5 nm to 5 nm.

[0320] In some embodiments, the thickness of the polymer layer may be 0.5 nm, 1 nm, 3 nm, 5 nm, 7 nm, 9 nm, or 10 nm.

[0321] In some embodiments, the conductive protective layer 124 may include a metal oxide layer.

[0322] In some embodiments, the metal oxide layer may include a film structure obtained by magnetron sputtering of a metal oxide.

[0323] In some embodiments, the metal oxide may include, but is not limited to, indium tin oxide (ITO).

[0324] In some embodiments, when the conductive nanolayer 123 and the conductive protective layer 124 are arranged in a layered manner (for example, the conductive nanolayer 123 is located below the conductive protective layer 124), the thickness of the metal oxide layer may be 10 nm to 50 nm.

[0325] In some embodiments, the thickness of the metal oxide layer may be 15 nm to 45 nm.

[0326] In some embodiments, the thickness of the metal oxide layer may be 20 nm to 40 nm.

[0327] In some embodiments, the thickness of the metal oxide layer may be 25 nm to 35 nm.

[0328] In some embodiments, the thickness of the metal oxide layer may be 28 nm to 30 nm.

[0329] In some embodiments, the thickness of the metal oxide layer may be 10 nm, 20 nm, 30 nm, 40 nm, or 50 nm.

[0330] In the embodiments of this specification, different conductive protective layers 124 (e.g., polymer layers or metal oxide layers) can be used, and different thicknesses of the conductive protective layer 124 can be set for different conductive protective layers 124, which not only improves the weather resistance of the resulting conductive film 100 but also reduces the difficulty of photolithography etching and improves the efficiency of photolithography etching.

[0331] In some embodiments, if the conductive nanolayer 123 is a metal nanowire layer, at least a portion of the conductive protective layer 124 may be located in the lattice gaps formed by the metal nanowires within the metal nanowire layer.

[0332] For example, at least a portion of the conductive protective layer 124 may be filled into or embedded in lattice gaps formed by metal nanowires.

[0333] In this case, the thickness of the conductive protective layer 124 may be understood as the distance between the surface of the base film 110 that is in contact with the conductive protective layer 124 and the horizontal plane of the conductive protective layer 124 located within the lattice gap formed by the metal nanowires.

[0334] The thickness of the metal nanowire layer may be understood as the distance between the surface of the base film 110 that contacts the metal nanowire layer and the highest point of the metal nanowire layer.

[0335] In some embodiments, at least a portion of the metal nanowire layer may protrude from the conductive protective layer 124, and as can be understood, the thickness of at least a portion of the metal nanowire layer may be greater than the thickness of the conductive protective layer 124.

[0336] In some embodiments, the thickness of a portion of the metal nanowire layer may be equal to the thickness of the conductive protective layer 124.

[0337] In some embodiments, the thickness of a portion of the metal nanowire layer may be less than the thickness of the conductive protective layer 124.

[0338] In some embodiments, the thickness of the conductive protective layer 124 may be 30% to 110% of the thickness of the metal nanowire layer.

[0339] In some embodiments, the thickness of the conductive protective layer 124 may be 30% to 100% of the thickness of the metal nanowire layer.

[0340] In some embodiments, the thickness of the conductive protective layer 124 may be 30% to 90% of the thickness of the metal nanowire layer.

[0341] In some embodiments, the thickness of the conductive protective layer 124 may be 30% to 80% of the thickness of the metal nanowire layer.

[0342] In some embodiments, the thickness of the conductive protective layer 124 may be 30% to 70% of the thickness of the metal nanowire layer.

[0343] In some embodiments, the thickness of the conductive protective layer 124 may be 30% to 60% of the thickness of the metal nanowire layer.

[0344] In some embodiments, the thickness of the conductive protective layer 124 may be 30% to 50% of the thickness of the metal nanowire layer.

[0345] In some embodiments, the thickness of the conductive protective layer 124 may be 30% to 40% of the thickness of the metal nanowire layer.

[0346] In some embodiments, the thickness of the conductive protective layer 124 may be 40% to 100% of the thickness of the metal nanowire layer.

[0347] In some embodiments, the thickness of the conductive protective layer 124 may be 40% to 90% of the thickness of the metal nanowire layer.

[0348] In some embodiments, the thickness of the conductive protective layer 124 may be 50% to 80% of the thickness of the metal nanowire layer.

[0349] In some embodiments, the thickness of the conductive protective layer 124 may be 60% to 70% of the thickness of the metal nanowire layer.

[0350] In some embodiments, the thickness of the conductive protective layer 124 may be 30%, 40%, 50%, 60%, 70%, 80%, 90%, 100%, or 110% of the thickness of the metal nanowire layer.

[0351] Because the conductive protective layer 124 is located in the lattice gaps formed by the metal nanowires within the metal nanowire layer, or because the thickness of the conductive protective layer 124 is less than the thickness of the metal nanowire layer, multiple types of etching solutions (e.g., hydrochloric acid-nitric acid-based etching solution, iron chloride-based etching solution, iron nitrate-based etching solution, or phosphoric acid-nitric acid-acetic acid-based etching solution) can be applied to etching the conductive grid structure. Furthermore, the conductive protective layer 124 containing an acrylic resin (e.g., at least one of aliphatic polyurethane acrylate, aromatic polyurethane acrylate, polyurethane methacrylate, epoxy acrylate, or epoxy methacrylate) has a low coverage rate on the metal nanowire layer (e.g., silver nanowire layer), resulting in many contact points between the etching solution and the metal nanowire layer. This helps to achieve etching of the metal nanowire layer in a short time and improve etching efficiency.

[0352] In some embodiments, when the thickness of the conductive protective layer 124 is 90% to 110% of the thickness of the metal nanowire layer, the conductive protective layer 124 substantially covers the metal nanowire layer, and in this case the contact area between the etching solution and the metal nanowire layer is reduced, but the iron nitrate-based etching solution and / or the phosphoric acid-nitric acid-acetic acid-based etching solution can still etch the metal nanowire layer to form a conductive grid structure.

[0353] In some embodiments, as shown in Figures 3 and 4, the base film 110 and the conductive layer that is not photolithographically etched may include the base film 110, a conductive nanolayer 123, and a conductive protective layer 124.

[0354] To make it clear, the conductive layer that is not photolithographically etched includes a conductive nanolayer 123 and a conductive protective layer 124, and the conductive nanolayer 123 and the conductive protective layer 124 together may be called a conductive grid line 1212.

[0355] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 20% to 90%.

[0356] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 20% to 85%.

[0357] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 30% to 85%.

[0358] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 40% to 85%.

[0359] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 50% to 85%.

[0360] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 60% to 85%.

[0361] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 70% to 85%.

[0362] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 80% to 85%.

[0363] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 50% or more.

[0364] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 55% or more.

[0365] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 60% or more.

[0366] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 65% or more.

[0367] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 70% or more.

[0368] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 75% or more.

[0369] In some embodiments, the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched may be 80% or more.

[0370] By setting the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched to 20% to 90%, the base film 110 and the conductive layer that is not photolithographically etched (e.g., conductive grid lines 1212) can also transmit visible light. This not only improves the overall light transmittance of the conductive film 100, but also eliminates the need to particularly miniaturize the conductive grid lines 1212 formed by photolithography etching. Furthermore, it significantly reduces the difficulty of the photoprocess from the standpoint of equipment accuracy and process requirements, contributing to reduced process costs and improved product yield.

[0371] Furthermore, since the conductive grid wires 1212 can transmit visible light and have a light transmittance of 20% to 90%, the difference between the light transmittance of the conductive grid wires 1212 and the light transmittance of the hollow lattice 1211 is small.

[0372] In some embodiments, the sheet resistance of the base film 110 and the conductive layer that is not photolithographically etched may be 0.1Ω / □ to 50Ω / □.

[0373] In some embodiments, the sheet resistance of the base film 110 and the conductive layer that is not photolithograph-etched may be 2Ω / □ to 45Ω / □.

[0374] In some embodiments, the sheet resistance of the base film 110 and the conductive layer that is not photolithograph-etched may be 4Ω / □ to 40Ω / □.

[0375] In some embodiments, the sheet resistance of the base film 110 and the conductive layer that is not photolithograph-etched may be 6Ω / □ to 35Ω / □.

[0376] In some embodiments, the sheet resistance of the base film 110 and the conductive layer that is not photolithograph-etched may be 8Ω / □ to 30Ω / □.

[0377] In some embodiments, the sheet resistance of the base film 110 and the conductive layer that is not photolithograph-etched may be 10Ω / □ to 25Ω / □.

[0378] In some embodiments, the sheet resistance of the base film 110 and the conductive layer that is not photolithograph-etched may be 15Ω / □ to 20Ω / □.

[0379] In some embodiments, the sheet resistance of the base film 110 and the conductive layer that is not photolithograph-etched may be 1Ω / □, 5Ω / □, 8Ω / □, 10Ω / □, 20Ω / □, 30Ω / □, 40Ω / □, or 50Ω / □.

[0380] By setting the sheet resistance of the base film 110 and the conductive layer that is not photolithographically etched to 0.1Ω / □ to 50Ω / □, it is possible to ensure that the conductivity of the conductive film 100 obtained by photolithographic etching meets the application requirements of the subsequent touch function sheet.

[0381] The thickness of the conductive layer 120 on the base film 110 (shown as h in Figures 3 and 4) may be understood as the thickness of the conductive layer that is not photolithographically etched, and includes the sum of the thickness of the conductive nanolayer 123 (e.g., a metal nanowire layer) and the thickness of the conductive protective layer 124.

[0382] In some embodiments, the thickness of the conductive layer may be 50 nm to 300 nm.

[0383] In some embodiments, the thickness of the conductive layer may be 80 nm to 270 nm.

[0384] In some embodiments, the thickness of the conductive layer may be 100 nm to 250 nm.

[0385] In some embodiments, the thickness of the conductive layer may be 120 nm to 230 nm.

[0386] In some embodiments, the thickness of the conductive layer may be 150 nm to 200 nm.

[0387] In some embodiments, the thickness of the conductive layer may be 160 nm to 180 nm.

[0388] In some embodiments, the thickness of the conductive layer may be 50 nm, 150 nm, 200 nm, 250 nm, or 300 nm.

[0389] By setting the thickness of the conductive layer to 50 nm to 300 nm, the difficulty of photolithography etching can be reduced and the efficiency of photolithography etching can be improved.

[0390] In some embodiments, the haze of the base film 110 and the conductive layer that is not photolithographically etched may be 1.0% to 30%.

[0391] In some embodiments, the haze of the base film 110 and the conductive layer that is not photolithographically etched may be 3% to 28%.

[0392] In some embodiments, the haze of the base film 110 and the conductive layer that is not photolithographically etched may be 5% to 25%.

[0393] In some embodiments, the haze of the base film 110 and the conductive layer that is not photolithographically etched may be 8% to 23%.

[0394] In some embodiments, the haze of the base film 110 and the conductive layer that is not photolithograph-etched may be 10% to 20%.

[0395] In some embodiments, the haze of the base film 110 and the conductive layer that is not photolithographically etched may be 12% to 18%.

[0396] In some embodiments, the haze of the base film 110 and the conductive layer that is not photolithographically etched may be 14% to 15%.

[0397] In some embodiments, the conductive layer 120 may further contain colored particles.

[0398] In some examples, the particle size of the colored particles may be 0.05 μm to 1.0 μm.

[0399] In some examples, the particle size of the colored particles may be 0.05 μm to 1.0 μm.

[0400] In some examples, the particle size of the colored particles may be 0.1 μm to 0.9 μm.

[0401] In some embodiments, the particle size of the colored particles may be 0.2 μm to 0.8 μm.

[0402] In some embodiments, the particle size of the colored particles may be 0.3 μm to 0.7 μm.

[0403] In some embodiments, the particle size of the colored particles may be 0.4 μm to 0.6 μm.

[0404] In some embodiments, the particle size of the colored particles may be 0.45 μm to 0.55 μm.

[0405] In some embodiments, particle size may be understood as equivalent diameter.

[0406] When particle size reaches the nanoscale, quantum size effects occur; that is, the metal nanowires within the conductive grid lines 1212 obtained by etching absorb wavelengths in a specific wavelength band due to localized surface plasmon resonance, causing a macroscopic color change in the conductive film 100.

[0407] By adding colored particles to the conductive layer 120, color compensation can be performed for the wavelength range absorbed by the metal nanowires, making the entire conductive film 100 almost colorless and transparent, resulting in a more uniform overall optical appearance. Furthermore, etching marks on the conductive film 100 become less noticeable, thus avoiding the problem of moiré or granular noise occurring in the conductive film during subsequent application processes.

[0408] By etching the conductive layer 120 using photolithography etching, the conductive nanolayer 123 and the conductive protective layer 124 can be etched more effectively, resulting in the conductive region (for example, the conductive film 100 shown in Figure 1B or the first conductive region 121 shown in Figure 1C) including the base film and conductive grid structure having excellent optical performance (e.g., high light transmittance, low haze).

[0409] In some embodiments, if the light transmittance of the base film 110 is T0 and the light transmittance of the base film 110 and the conductive layer that is not photolithographically etched is T1, then the light transmittance T2 of the conductive region including the base film 110 and the conductive grid structure obtained by photolithographic etching (for example, the conductive film 100 shown in Figure 1B or the first conductive region 121 shown in Figure 1C) may be expressed as T2 = T0 - (T0 - T1)·(1 - S).

[0410] In some embodiments, the light transmittance of the conductive region, including the base film and the conductive grid structure, may be 80% or more.

[0411] In some embodiments, the light transmittance of the conductive region, including the base film and the conductive grid structure, may be 82% or higher.

[0412] In some embodiments, the light transmittance of the conductive region, including the base film and the conductive grid structure, may be 84% or higher.

[0413] In some embodiments, the light transmittance of the conductive region, including the base film and the conductive grid structure, may be 86% or higher.

[0414] In some embodiments, the light transmittance of the conductive region, including the base film and the conductive grid structure, may be 88% or higher.

[0415] In some embodiments, the light transmittance of the conductive region, including the base film and the conductive grid structure, may be 90% or more.

[0416] In some embodiments, the light transmittance of the conductive region, including the base film and the conductive grid structure, may be 92% or higher.

[0417] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 150Ω / □.

[0418] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 140Ω / □.

[0419] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 130Ω / □.

[0420] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 120Ω / □.

[0421] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 110Ω / □.

[0422] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 100Ω / □.

[0423] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 90Ω / □.

[0424] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 80Ω / □.

[0425] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 70Ω / □.

[0426] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 60Ω / □.

[0427] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 50Ω / □.

[0428] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 40Ω / □.

[0429] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 30Ω / □.

[0430] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 20Ω / □.

[0431] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 5Ω / □ to 10Ω / □.

[0432] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 10Ω / □ to 140Ω / □.

[0433] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 20Ω / □ to 130Ω / □.

[0434] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 30Ω / □ to 120Ω / □.

[0435] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 40Ω / □ to 110Ω / □.

[0436] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 50Ω / □ to 100Ω / □.

[0437] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 60Ω / □ to 90Ω / □.

[0438] In some embodiments, the sheet resistance of the conductive region including the conductive grid structure may be 70Ω / □ to 80Ω / □.

[0439] In some embodiments, if the haze of the base film 110 is H0 and the haze of the base film 110 and the conductive layer that is not photolithographically etched is H1, then the haze H2 of the conductive region including the base film and the conductive grid structure obtained by photolithographic etching (for example, the conductive film 100 shown in Figure 1B or the first conductive region 121 shown in Figure 1C) may be expressed as H2 = H0 + (H1 - H0)·(1 - S).

[0440] In some embodiments, the haze of the conductive region, including the base film and the conductive grid structure, may be 0.8% to 4.0%.

[0441] In some embodiments, the haze of the conductive region, including the base film and the conductive grid structure, may be 1% to 3.5%.

[0442] In some embodiments, the haze of the conductive region, including the base film and the conductive grid structure, may be 1.2% to 3.2%.

[0443] In some embodiments, the haze of the conductive region, including the base film and the conductive grid structure, may be 1.5% to 3.0%.

[0444] In some embodiments, the haze of the conductive region including the base film and the conductive grid structure may be 1.8% to 2.7%.

[0445] In some embodiments, the haze of the conductive region, including the base film and the conductive grid structure, may be 2% to 2.5%.

[0446] In the embodiments described herein, the "touch electrode" and "touch function sheet" can be used interchangeably with the "touch member".

[0447] The above description of the conductive film is merely illustrative and descriptive, and does not limit the scope of application of this application.

[0448] Those skilled in the art can make various modifications and changes to the conductive film under the guidance of this application.

[0449] However, these modifications and changes remain within the scope of this application.

[0450] One embodiment of this specification provides a method for manufacturing a conductive film.

[0451] The method may include the following steps:

[0452] In step S1, a conductive layer is formed on the base film.

[0453] In some embodiments, the conductive layer may include a conductive nanolayer.

[0454] The conductive nanolayer may include at least one of a metal nanolayer and a metal nanowire layer.

[0455] In some embodiments, a metal nanolayer can be formed by magnetron sputtering of metal nanoparticles.

[0456] In some embodiments, a metal nanowire layer can be formed by coating with metal nanowire ink.

[0457] For example, a metal nanowire layer can be obtained by coating a base film (e.g., a PET-based film, a CPI-based film) with metal nanowire ink using a roll-to-roll coating method.

[0458] The solid content of a metal nanowire ink may be understood as the mass fraction of metal nanowires in the metal nanowire ink.

[0459] In some embodiments, the solid content of the metal nanowire ink may be 0.08% to 1.0%.

[0460] In some embodiments, the solid content of the metal nanowire ink may be 0.1% to 1.5%.

[0461] In some embodiments, the solid content of the metal nanowire ink may be 0.08%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1.0%, 1.1%, 1.2%, 1.3%, 1.4%, or 1.5%.

[0462] In some embodiments, the diameter of the metal nanowire may be 10 nm to 50 nm.

[0463] In some embodiments, the diameter of the metal nanowire may be 10 nm to 30 nm.

[0464] In some examples, the length of the metal nanowire may be 10 μm to 40 μm.

[0465] In some embodiments, the length of the metal nanowire may be 10 μm, 20 μm, 30 μm, 40 μm, or 50 μm.

[0466] In some embodiments, the conductive layer may further include a conductive protective layer.

[0467] In some embodiments, the conductive protective layer may include at least one of a polymer layer, a metal oxide layer, or a graphene layer.

[0468] In some embodiments, forming a conductive protective layer may involve coating a conductive nanolayer with a protective liquid containing a polymer and drying it to obtain a polymer layer.

[0469] In some embodiments, forming a conductive protective layer may include forming a metal oxide layer by magnetron sputtering a metal oxide onto a conductive nanolayer.

[0470] In some embodiments, forming a conductive protective layer may involve coating a conductive nanolayer with a graphene oxide solution, drying it, and reducing it to obtain a graphene layer.

[0471] In some embodiments, when the conductive nanolayer and the conductive protective layer are not layered, forming the conductive layer on the base film may include coating the base film after mixing the metal nanowire ink and the protective liquid.

[0472] In some embodiments, when a conductive nanolayer and a conductive protective layer are layered, forming the conductive layer on a base film may include forming a conductive nanolayer (e.g., a metal nanowire layer) on the base film and forming a conductive protective layer on the conductive nanolayer (e.g., a metal nanowire layer).

[0473] In some embodiments, when the conductive nanolayer is a metal nanowire layer, forming the conductive layer on the base film may include forming the metal nanowire layer on the base film and coating the conductive protective layer in the lattice gaps formed by the metal nanowires within the metal nanowire layer, so that at least a portion of the conductive protective layer is located in the lattice gaps formed by the metal nanowires within the metal nanowire layer.

[0474] To make it easier to understand, at least a portion of the conductive protective layer may be filled or embedded in lattice gaps formed by metal nanowires.

[0475] In step S2, the conductive layer is etched to obtain a conductive film.

[0476] The conductive layer may include one or more conductive regions.

[0477] If the conductive layer includes multiple conductive regions (which may be understood as at least two conductive regions), the multiple conductive regions are configured to include a first conductive region and a second conductive region.

[0478] To make it easier to understand, the conductive layer includes a first conductive region and a second conductive region.

[0479] At least one conductive region includes a conductive grid structure.

[0480] In the embodiments of this specification, the first conductive region is configured to include a conductive grid structure.

[0481] The conductive grid structure includes multiple hollow lattices and conductive grid lines.

[0482] The hollow lattice is formed by photolithography etching, which etches conductive nanolayers (e.g., metal nanowire layers) and conductive protective layers.

[0483] Etching the conductive layer involves forming a conductive region (e.g., a first conductive region) containing a conductive grid structure on the conductive layer by photolithography etching.

[0484] The conductive layer includes a first conductive region in which a conductive grid structure is formed by photolithography etching, and a second conductive region that is not photolithographically etched, the second conductive region surrounding the first conductive region.

[0485] In some embodiments, in step S2, a photoresist solution is coated (for example, by a roll-to-roll device) onto the base film and the non-photolithographically etched conductive layer using microgravure coating or slit roll-to-roll coating in a yellow light environment, and the photoresist is baked to dry and obtain a film material.

[0486] In some embodiments, baking may include, but is not limited to, baking in an oven or baking in a far-infrared heating oven.

[0487] In some embodiments, the baking temperature may be between 60°C and 100°C.

[0488] In some embodiments, the baking temperature may be 60°C, 70°C, 80°C, 90°C, or 100°C.

[0489] In some examples, the thickness of the photoresist after drying may be 1.0 μm to 5.0 μm.

[0490] In some examples, the thickness of the photoresist after drying may be 1.2 μm to 1.8 μm.

[0491] In some examples, the thickness of the photoresist after drying may be 1.0 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3.0 μm, 3.5 μm, 4.0 μm, 4.5 μm, or 5.0 μm.

[0492] In some embodiments, a negative-type photosensitive dry film material (which may also be called a "negative-type photoresist") of a predetermined thickness (e.g., 10 μm to 30 μm) may be pressed onto the conductive layer.

[0493] Film materials must be protected from light during storage, transport, or shipping.

[0494] In some embodiments, a pattern on a film or mask is transferred by exposing and developing a film material coated with a photoresist.

[0495] In some embodiments, exposure refers to covering the surface of a photoresist-coated film material with a film or mask, and using ultraviolet irradiation to chemically react the photoresist at the light-irradiated location, thereby changing the solubility of the photoresist in the developer at that light-irradiated location.

[0496] In some embodiments, the exposure energy is 50 mJ / cm². 2 ~300 mJ / cm 2 It may be within the range of [a certain limit].

[0497] In some embodiments, the exposure energy is 50 mJ / cm². 2 , 100 mJ / cm 2 , 150 mJ / cm 2 , 200 mJ / cm 2 250 mJ / cm² 2 or 300 mJ / cm² 2 You can also use these.

[0498] In some embodiments, exposure may include continuous exposure or chip exposure.

[0499] Here, the pattern on the film or mask may be a polygonal grid pattern (for example, a square grid pattern, a diamond grid pattern, etc.).

[0500] The pattern on the film or mask coincides with the pattern formed by the conductive grid structure.

[0501] In some embodiments, developing refers to the process of transferring a pattern from a film or mask to a photoresist by immersing or spraying the exposed photoresist into a developer solution.

[0502] Photoresists include positive-type photoresists and negative-type photoresists.

[0503] In the case of positive-type photoresists, the photoresist in the exposed areas dissolves in the developer, while in the case of negative-type photoresists, the photoresist solution in the unexposed areas dissolves in the developer.

[0504] In some embodiments, the developer may include, but is not limited to, a 0.8 wt% to 0.9 wt% KOH solution, a 2.38 wt% tetramethylammonium hydroxide (TMAH) solution, or a 0.7 wt% to 1.2 wt% sodium carbonate solution.

[0505] In some embodiments, the development temperature may be 23°C to 25°C.

[0506] Since the film material on which the photoresist pattern is formed softens and expands during development, potentially affecting the etching resistance of the film material, the moisture in the film material on which the photoresist pattern is formed can be removed by post-baking, thereby improving the adhesion between the pattern and the film material.

[0507] In some embodiments, post-baking may include, but is not limited to, post-baking in an oven or post-baking in a far-infrared heating furnace.

[0508] In some embodiments, the post-bake temperature may be 80°C to 120°C.

[0509] In some examples, the post-bake temperature may be 100°C to 120°C.

[0510] In some embodiments, the post-bake temperature may be 100°C, 105°C, 110°C, 115°C, or 120°C.

[0511] In some embodiments, the post-bake time may be 60s to 300s.

[0512] In some embodiments, the post-bake time may be 60s to 180s.

[0513] In some embodiments, the post-bake time may be 60s, 70s, 80s, 90s, 100s, 110s, 120s, 130s, 140s, 150s, 160s, 170s, or 180s.

[0514] Using an etching solution, the conductive layer on the film material that is not protected by photoresist is corroded or oxidized, while the conductive layer protected by photoresist is retained, forming a conductive grid structure.

[0515] The etching solution can corrode or oxidize conductive nanolayers (e.g., silver nanowire layers), but does not damage the surface of the film material or the photoresist.

[0516] The etching solution may also be a hydrochloric acid-nitric acid-based etching solution, an iron chloride-based etching solution, an iron nitrate-based etching solution, an iron nitrate-nitric acid-based etching solution, or a phosphoric acid-nitric acid-acetic acid-based etching solution.

[0517] In some embodiments, the temperature of the etching solution may be 35°C to 50°C.

[0518] In some embodiments, the etching solution temperature may be 35°C, 40°C, 45°C, or 50°C.

[0519] In some embodiments, the etching time may be 60s to 180s.

[0520] In some embodiments, the etching time may be 80s, 100s, 120s, 140s, 160s, or 180s.

[0521] After etching, any photoresist remaining on the film material is removed with a stripping solution, and then the surface of the resulting conductive film is washed with high-purity water to remove any remaining liquid, residual photoresist, and other impurities.

[0522] In some embodiments, the stripping solution may be an alkaline solution.

[0523] In some embodiments, the alkali content of the stripping solution is higher than that of the developing solution.

[0524] For example, the stripping solution may be a 3 wt% to 5 wt% NaOH solution.

[0525] In some embodiments, the temperature of the stripping solution may be 35°C to 45°C.

[0526] In some embodiments, the temperature of the stripping solution may be 35°C, 40°C, or 45°C.

[0527] In some embodiments, in a DES (Developing, Etching, Stripping) line, the exposed film material can be developed with a developer to obtain a grid pattern, and then the developed film material can be transferred to an oven for drying and post-baking.

[0528] Subsequently, the post-baked film material is subjected to etching and peeling treatments to obtain a conductive film.

[0529] By placing a conductive grid structure in at least one conductive region (e.g., a first conductive region), the conductive grid wires of the conductive grid structure can achieve conductivity, and since the light transmittance of the metal nanowire conductive layer is 20% to 90%, the conductive grid structure itself is also transparent.

[0530] The metal nanowires in the hollow lattice of the conductive grid structure are completely etched, reducing the reflection and scattering of visible light from the irregularly distributed metal nanowires, and the proportion of the hollow region reaches 60% to 97%, thereby improving optical problems such as whitening, yellowing, or cloudiness present in the metal nanowire layer itself.

[0531] Furthermore, the hollow lattice is formed by photolithography etching, which can more effectively etch and remove the metal nanowire layer and protective layer. As a result, the conductive region including the conductive grid structure has excellent optical properties (e.g., high light transmittance, low haze).

[0532] In some embodiments, the conductive region (e.g., the first conductive region) including the base film and conductive grid structure manufactured by the above method may have a light transmittance of 80% or more, a haze of 0.8% to 4.0%, and a sheet resistance of 5Ω / □ to 150Ω / □.

[0533] In some embodiments, the base film and first conductive region manufactured by the above method may have a visible light transmittance of 80% to 92%, a haze of 0.8% to 4.0%, and a surface resistivity of 5Ω / □ to 150Ω / □.

[0534] For descriptions of the base film, conductive layer, conductive nanolayer, metal nanowire layer, metal nanolayer, conductive protective layer, polymer layer, metal oxide layer, first conductive region, second conductive region, and conductive film, please refer to other parts of this specification (e.g., Figures 1A, 1B, 1C, 2-7 and their related descriptions), and such descriptions are omitted here.

[0535] By manufacturing a conductive film using the above photolithography etching method, the conductive region (e.g., the first conductive region) containing the conductive grid structure exhibits excellent optical performance.

[0536] For example, the base film and the first conductive region can have a visible light transmittance of 80% or more, for example, 80% to 92%, and a haze of 4.0% or less.

[0537] Compared to laser etching, the embodiments described herein can improve the manufacturing efficiency of conductive films by producing conductive films having the above-described specific structure (e.g., a first conductive region) by photolithography etching, making them suitable for large-scale mass production.

[0538] The above description of the method for manufacturing the conductive film is merely illustrative and descriptive, and does not limit the scope of application of this application.

[0539] Those skilled in the art can make various modifications and changes to the method for manufacturing conductive films under the guidance of this application.

[0540] However, these modifications and changes remain within the scope of this application.

[0541] One embodiment of this specification further provides a touch member.

[0542] The touch member includes the aforementioned conductive film.

[0543] One embodiment of this specification further provides a touch-enabled sheet.

[0544] The touch function sheet includes the conductive film described above.

[0545] A method for manufacturing a touch function sheet may include the steps of: screen printing silver paste onto a second conductive region of a conductive film using a screen mask, and performing laser etching using a laser to manufacture the edge lines and electrodes of a touch sensor; and bonding the electrodes of the touch sensor with an optically clear adhesive (OCA), and slitting the bonded electrodes of the touch sensor to obtain a touch function sheet.

[0546] In some embodiments, etching a conductive film to manufacture electrodes for a touch sensor may include etching a second conductive region of the conductive film (e.g., photolithography etching, laser etching) to form a touch pattern and lead wires.

[0547] In the embodiments described herein, the resistance of the base film and the conductive layer that is not photolithograph-etched is low, and when manufacturing touch-functional sheets of 10 inches or less, it is not necessary to screen print silver paste and laser etch lead wires, thereby improving the manufacturing efficiency of touch-functional sheets.

[0548] In some embodiments, the step of etching a second conductive region of a conductive film to produce electrodes for a touch sensor can be performed simultaneously with the production of the first conductive region of the conductive film (for example, by photolithographic etching of a conductive layer to obtain the first conductive region of the conductive film), thereby simplifying the manufacturing process of the touch functional sheet and improving manufacturing efficiency.

[0549] For example, in the process of photolithographic etching a conductive layer, the touch pattern and lead wires can be photolithographic etched simultaneously.

[0550] By bonding the electrodes of two touch sensors together with an optical adhesive, the optical adhesive OCA can be filled into multiple hollow lattices in the first conductive region of the conductive film, reducing the reflection and scattering of the touch pattern to visible light and improving the optical performance of the touch function sheet.

[0551] In some embodiments, the light transmittance of the touch function sheet may be 80% or more.

[0552] In some embodiments, the light transmittance of the touch function sheet may be 82% or higher.

[0553] In some embodiments, the light transmittance of the touch function sheet may be 84% or higher.

[0554] In some embodiments, the light transmittance of the touch function sheet may be 86% or higher.

[0555] In some embodiments, the light transmittance of the touch function sheet may be 88% or higher.

[0556] In some embodiments, the light transmittance of the touch function sheet may be 90% or more.

[0557] In some embodiments, the light transmittance of the touch function sheet may be 92% or higher.

[0558] In some embodiments, the haze of the touch-sensitive sheet may be between 1.0% and 4.0%.

[0559] In some embodiments, the haze of the touch-sensitive sheet may be between 1.2% and 3.7%.

[0560] In some embodiments, the haze of the touch-sensitive sheet may be between 1.5% and 3.4%.

[0561] In some embodiments, the haze of the touch-enabled sheet may be between 1.8% and 3.1%.

[0562] In some embodiments, the haze of the touch-enabled sheet may be 2.0% to 2.8%.

[0563] In some embodiments, the haze of the touch-sensitive sheet may be 2.2% to 2.5%.

[0564] The above description of the touch function sheet is illustrative and descriptive only and does not limit the scope of application of this application.

[0565] Those skilled in the art can make various modifications and changes to the touch function sheet under the guidance of this invention.

[0566] However, these modifications and changes remain within the scope of this application.

[0567] Table 1 shows experimental data regarding conductive films and touch-functional sheets manufactured using the manufacturing method described above.

[0568] Note that Table 1 does not list all relevant parameters.

[0569] [Table 1-1] [Table 1-2] [Table 1-3]

[0570] In Examples 1 to 7 and Comparative Example 1, the size of the touch function sheet was 7.0 inches. The G (Glass) cover plate + touch function sheet constituted a GFF structured touch module. The G cover plate is a 0.4 mm glass cover plate, and the thicknesses of the three OCA layers it contains are 125 μm, 125 μm, and 200 μm, respectively.

[0571] For a standard 7.0-inch GG-ITO touch module, calculations using the thinnest ITO glass (0.4mm) show that the two included OCA layers are each 0.2mm thick, the module weighs approximately 50g or more, and its thickness is 1.2mm or more.

[0572] In the example, when a P(Plastics) cover plate is used, i.e., when a PFF structure is used, the overall thickness of the touch module is approximately 60% to 80% of the thickness of the GFF, and the weight is approximately 45% to 60% of the weight of the GFF.

[0573] As can be seen from Table 1, compared to Examples 5 to 7, in Comparative Example 1, when the width of the conductive grid lines is 120 μm and the ratio of the total area of ​​the multiple hollow grids to the area of ​​the first conductive region is 46.8%, the haze of the manufactured touch functional sheet is higher than that of Examples 5 to 7, reaching 4.3%.

[0574] As can be seen from Table 1, the conductive film manufactured according to the method for manufacturing a conductive film in the above embodiment can achieve a light transmittance of 80% or more and a haze of 4% or less.

[0575] A touch-functional sheet manufactured using the above conductive film can achieve a light transmittance of substantially 80% or more and a haze of 3.63% or less.

[0576] It should be noted that the parameters listed in the table above are merely parameter records from a single experimental data set, and do not imply that all of the above parameters must be used to achieve the effect of improving the light transmittance and haze of the conductive film.

[0577] For example, even if the solid content of the silver nanowire ink differs from the content recorded in Examples 1 to 7 in the table above, the conductive film manufactured according to the above method for manufacturing conductive films can achieve a light transmittance of 80% or more and a haze of less than 4%.

[0578] One embodiment of this specification further provides a touch electrode.

[0579] The touch electrode includes the conductive film described above.

[0580] In some embodiments, the touch electrode may include a touch pattern and lead wires.

[0581] The touch pattern may be formed in the first conductive region of the conductive film described above, and the lead wire may be formed in the second conductive region of the conductive film.

[0582] Because the first conductive region of the conductive film has excellent optical performance, the touch electrode also has excellent optical performance accordingly.

[0583] One embodiment of this specification further provides a method for manufacturing a touch electrode using the conductive film described above.

[0584] The method may include the steps of forming a touch pattern for a touch electrode in a first conductive region by laser etching, and forming lead wires for a touch electrode in a second conductive region by laser etching.

[0585] In the embodiments described herein, by using laser etching, the manufacturing of the touch pattern and lead wires of the touch electrode can be completed in a single step, eliminating the need for conventional operations such as screen printing of silver paste, thereby simplifying the manufacturing process of the touch electrode and improving the manufacturing efficiency of the touch electrode.

[0586] In some embodiments, the visible light transmittance of the touch electrode may be 80% to 92%.

[0587] In some embodiments, the haze of the touch electrode may be 0.8% to 4.0%.

[0588] The above description of the touch electrode and its manufacturing method is illustrative and descriptive only and does not limit the scope of application of this application.

[0589] Those skilled in the art can make various modifications and changes to the touch electrode and its manufacturing method under the guidance of this application.

[0590] However, these modifications and changes remain within the scope of this application.

[0591] Table 2 shows experimental data for conductive films manufactured according to the manufacturing method described above.

[0592] Note that Table 2 does not list all relevant parameters.

[0593] [Table 2-1] [Table 2-2]

[0594] As can be seen from Table 2, the base film and first conductive region of the conductive film manufactured according to the conductive film manufacturing method (photolithography etching) in the above embodiment can achieve a light transmittance of 88% or more and a haze of 3.2% or less.

[0595] It should be noted that the parameters listed in the table above are merely parameter records from a single experimental data set, and do not imply that all of the above parameters must be used to achieve the effect of improving the light transmittance and haze of the first conductive region of the conductive film.

[0596] For example, even if the surface resistivity of the base film and the conductive layer that is not photolithograph-etched differs from the parameters recorded in Examples 8 to 10 in the table above, the base film and the first conductive region of the conductive film manufactured according to the above-described method for manufacturing the conductive film can achieve a light transmittance of 85% or more and a haze of less than 3.2%.

[0597] The beneficial effects that can be achieved by the embodiments herein include, but are not limited to, the following: (1) Conductive regions including a conductive grid structure (e.g., a first conductive region) can be used to manufacture the touch pattern of the touch electrode, and conductive regions not including a conductive grid structure (e.g., a second conductive region) can be used to manufacture the lead wires of the touch electrode, thereby simplifying the manufacturing of the touch electrode, and by using laser etching, the manufacturing of the touch pattern and lead wires of the touch electrode can be completed in one step, eliminating the need for conventional operations such as screen printing of silver paste, thereby simplifying the manufacturing process of the touch electrode and improving the manufacturing efficiency of the touch electrode, ( 2) The conductive region (e.g., the first conductive region) including the base film and conductive grid structure has excellent optical performance, with a visible light transmittance of 80% or more, for example, 80% to 92%, and a haze of 0.8% to 4.0%. (3) Compared to laser etching, the embodiments herein can improve the manufacturing efficiency of conductive films by producing conductive films (e.g., the first conductive region) having a specific structure by photolithography etching, making them suitable for large-scale mass production. (4) The touch member manufactured using the aforementioned conductive film has excellent optical performance, with a light transmittance of 80% or more, for example, 80% to 92%, and a haze of 0.8% to 4.0%.(5) By designing a hollow lattice in the conductive region including the conductive grid structure, the reflection and scattering of visible light from irregularly distributed metal nanowires is reduced, and the proportion of the hollow lattice region reaches 60% to 97%, so that the whitening and cloudy appearance problems of the metal nanowire layer conductive film can be solved in later applications, and the optical appearance and performance can be greatly improved, (6) By bonding the electrodes of two touch sensors with optical adhesive OCA, the optical adhesive can be filled into multiple hollow lattices in the conductive region including the conductive grid structure, reducing the reflection and scattering of visible light from the touch pattern and improving the optical performance of the touch function sheet, (7) The conductive protective layer is located in the lattice gap formed by the metal nanowires in the metal nanowire layer, or conductive (8) The thickness of the protective layer is smaller than the thickness of the metal nanowire layer, which allows for the application of multiple types of etching solutions to the conductive grid structure, as well as increasing the number of contact points between the etching solution and the metal nanowire layer. This helps to achieve etching of the metal nanowire layer in a short time and improve etching efficiency. The maximum period of the conductive grid structure is 60% or less of the pixel array period of the display device using the conductive film. By setting it in this way, the optical appearance after the touch member using the conductive film is bonded to the screen can be further improved. Specifically, the touchscreen has a uniform optical effect and / or invisible etching marks in the off state, and no granular noise and / or moiré patterns in the on state.

[0598] The achievable beneficial effects may differ depending on the embodiment. In different embodiments, the achievable beneficial effects may be one or a combination of any of the above, or any other achievable beneficial effects.

[0599] While the basic concepts have been explained above, it will be clear to those skilled in the art that the above detailed disclosure is merely an example and does not limit the present application.

[0600] Although not explicitly stated herein, those skilled in the art can make various changes, improvements, and modifications to the present application.

[0601] These changes, improvements, and modifications, as suggested by the present application, remain within the spirit and scope of the exemplary embodiments of the present application.

[0602] Furthermore, certain terms are used in this application to illustrate the embodiments thereof.

[0603] For example, “one embodiment,” “one embodiment,” and / or “several embodiments” means a specific feature, structure, or characteristic relating to at least one embodiment of the present application.

[0604] Therefore, it should be emphasized and understood that any two or more references to “one embodiment,” “one example,” or “one alternative embodiment” in various parts of this specification do not necessarily refer to the same embodiment.

[0605] Furthermore, specific features, structures, or properties in one or more embodiments of the present application may be appropriately combined.

[0606] Furthermore, unless explicitly stated in the claims, the enumerated order of processing elements or sequences described in this application, the use of alphanumeric characters, or the use of other names does not limit the order of the procedures and methods of this application.

[0607] While the above disclosure describes various examples that are currently considered useful embodiments of the invention, such details are for illustrative purposes only, and the attached claims are not limited to the disclosed embodiments, but rather are intended to cover all modifications and equivalent combinations that fall within the spirit and scope of the embodiments of this application.

[0608] For example, the system assembly described above may be implemented by hardware devices, but it may also be implemented by a software-only solution, for example, by installing the described system on an existing server or mobile device.

[0609] Similarly, in the foregoing description of embodiments of the present application, various features may be combined into a single embodiment, drawing, or description for the purpose of simplifying the description of the disclosure and aiding in the understanding of one or more embodiments of the invention.

[0610] However, this method of disclosure does not mean that the claimed subject matter must have more features than those enumerated in each claim.

[0611] Rather, the features of an embodiment may be fewer than all the features of a single embodiment disclosed above.

[0612] In some embodiments, numbers are used to describe the number of components and attributes, and it should be understood that these numbers used to describe such embodiments are modified in some cases by modifiers such as “about,” “approximately,” or “generally.”

[0613] Unless otherwise specified, "approximately," "almost," or "roughly" indicates that the above figures are subject to a ±20% variation.

[0614] Therefore, in some embodiments, the numerical parameters used in the specification and claims are all approximations that may vary depending on the characteristics required for each individual embodiment.

[0615] In some examples, the numerical parameters should be treated with a specified number of significant digits, and the usual place-keep method should be used.

[0616] In some embodiments of this application, the numerical ranges and parameters used to determine the range are approximations; however, in specific embodiments, such values ​​are set as precisely as possible.

[0617] All patents, patent applications, published patent gazettes, and other materials such as articles, books, specifications, publications, and documents referenced herein are incorporated in their entirety by reference, with the exception of any prosecution history documents that are inconsistent with or contradict the content of this Application, and any documents that may have a limited effect on the broadest scope of the claims of this Application (currently or later relating to this Application).

[0618] In the event that any explanations, definitions, and / or use of terms in the attached documents of this application are inconsistent with or contradict the content of this application, the explanations, definitions, and / or use of terms in this application shall prevail.

[0619] Finally, please understand that the embodiments described in this application are merely for illustrating the principles of the embodiments.

[0620] Other variations may also fall within the scope of this invention.

[0621] Therefore, as examples rather than limitations, alternative configurations of the embodiments of the present application may be considered consistent with the teachings of the present application.

[0622] Therefore, the embodiments of this application are not limited to those explicitly introduced and described herein. [Explanation of Symbols]

[0623] 100 conductive film 110 base film 120 conductive layer 121 1st conductive region 1210 Conductive grid structure 1211 Hollow lattice 1212 Conductive grid wire 122 Second conductive region 123 Conductive nanolayer 124 Conductive protective layer

Claims

1. It includes a base film and a conductive layer covering the base film, The conductive layer includes one or more conductive regions, A conductive film wherein at least one of the conductive regions includes a conductive grid structure, the conductive grid structure includes a plurality of hollow lattices and conductive grid lines.

2. The conductive film according to claim 1, wherein the conductive layer includes a plurality of conductive regions, the plurality of conductive regions are configured to include a first conductive region and a second conductive region, the first conductive region includes the conductive grid structure, the second conductive region is installed surrounding the first conductive region, the second conductive region is connected to the conductive grid lines, and the surface resistivity of the first conductive region is greater than the surface resistivity of the second conductive region.

3. The conductive film according to claim 2, wherein the conductive layer has at least two first conductive regions, and a second conductive region is located between two adjacent first conductive regions.

4. The at least two first conductive regions are arranged in an array, The conductive film according to claim 3, wherein the shape of the first conductive region is circular or polygonal.

5. The conductive film according to claim 3, wherein the minimum distance between two adjacent first conductive regions is 200 mm to 350 mm.

6. The ratio of the surface resistivity of the first conductive region to the surface resistivity of the second conductive region is 5 or more. The conductive film according to claim 2, wherein the surface resistivity of the first conductive region is 5 Ω / □ to 150 Ω / □, and the surface resistivity of the second conductive region is 0.1 Ω / □ to 50 Ω / □.

7. The visible light transmittance of the base film and the first conductive region is greater than the visible light transmittance of the base film and the second conductive region. The conductive film according to claim 2, wherein the visible light transmittance of the base film and the first conductive region is 80% to 92%, and the visible light transmittance of the base film and the second conductive region is 20% to 90%.

8. The conductive film according to claim 1, wherein the conductive grid structure is formed by photolithographic etching of the conductive layer.

9. The conductive layer includes a conductive nanolayer, and the conductive nanolayer includes at least one of a metal nanolayer or a metal nanowire layer. The metal nanolayer comprises at least one of the following: gold nano, silver nano, copper nano, platinum nano, palladium nano, aluminum nano, tin nano, lead nano, or titanium nano. The conductive film according to claim 1, wherein the metal nanowire layer comprises at least one of silver nanowires, gold nanowires, copper nanowires, platinum nanowires, aluminum nanowires, titanium nanowires, or tin nanowires.

10. The conductive film according to any one of claims 1 to 9, wherein the conductive layer comprises a metal nanowire layer and a conductive protective layer, and the hollow lattice is formed by etching the metal nanowire layer and the conductive protective layer by photolithography etching.

11. The conductive film according to claim 10, wherein the light transmittance of the base film and the conductive layer that is not photolithographically etched is 20% to 90%.

12. The conductive film according to claim 10, wherein the sheet resistance of the base film and the conductive layer that is not photolithograph-etched is 0.1 Ω / □ to 50 Ω / □.

13. The conductive film according to claim 10, wherein the thickness of the conductive layer that is not photolithographically etched is 50 nm to 300 nm.

14. The conductive film according to claim 10, wherein the haze of the base film and the conductive layer that is not photolithographically etched is 1.0% to 30%.

15. The conductive film according to claim 10, wherein the conductive protective layer includes a polymer layer having a thickness of 0.5 nm to 10 nm.

16. The conductive film according to claim 10, wherein the conductive protective layer includes a metal oxide layer having a thickness of 10 nm to 50 nm.

17. The conductive film according to claim 1, wherein for each conductive region including a conductive grid structure, the ratio of the total area of ​​the plurality of hollow lattices to the area of ​​the corresponding conductive region is 60% or more and 97% or less.

18. The conductive film according to claim 1, wherein the width of the conductive grid lines is 3 μm to 30 μm.

19. The conductive film according to claim 1, wherein the maximum period of the conductive grid structure is 60% or less of the pixel array period of a display device using the conductive film.

20. The conductive film according to claim 1, wherein the material of the base film includes one or more combinations of polyester, cycloolefin polymer, colorless polyimide, polypropylene, polyethylene, triacetylcellulose, PETG, TPU, PVA, and PC.

21. The conductive film according to claim 1, wherein the conductive layer further comprises colored particles having a particle size of 0.05 μm to 1.0 μm.

22. The conductive film according to claim 1, wherein the light transmittance of the conductive region including the base film and the conductive grid structure is 80% or more.

23. The conductive film according to claim 1, wherein the sheet resistance of the conductive region including the conductive grid structure is 5 Ω / □ to 150 Ω / □.

24. The conductive film according to claim 1, wherein the haze of the conductive region including the base film and the conductive grid structure is 0.8% to 4.0%.

25. The conductive film according to claim 10, wherein at least a portion of the conductive protective layer is located in the lattice gaps formed by the metal nanowires in the metal nanowire layer.

26. The conductive film according to claim 25, wherein at least a portion of the metal nanowire layer protrudes from the conductive protective layer.

27. The conductive film according to claim 25, wherein the thickness of the conductive protective layer is 30% to 110% of the thickness of the metal nanowire layer.

28. The conductive film according to claim 25, wherein the thickness of the conductive protective layer is 30% to 80% of the thickness of the metal nanowire layer.

29. The conductive film according to claim 25, wherein the thickness of the conductive protective layer is 50% to 80% of the thickness of the metal nanowire layer.

30. The steps include forming a conductive layer on a base film, The step of etching the conductive layer to obtain a conductive film is included, The conductive layer includes one or more conductive regions, A method for manufacturing a conductive film, wherein at least one of the conductive regions includes a conductive grid structure, and the conductive grid structure includes a plurality of hollow lattices and conductive grid lines.

31. The conductive layer includes a plurality of conductive regions, and the plurality of conductive regions are configured to include a first conductive region having the conductive grid structure, and the step of etching the conductive layer is: The manufacturing method according to claim 30, comprising the step of forming the first conductive region including the conductive grid structure in the conductive layer by photolithography etching.

32. The manufacturing method according to claim 30, wherein the conductive layer comprises a metal nanowire layer and a conductive protective layer, and the hollow lattice is formed by etching the metal nanowire layer and the conductive protective layer by photolithography etching.

33. A touch member comprising a conductive film according to any one of claims 1 to 29.

34. The plurality of conductive regions are configured to include a first conductive region and a second conductive region, the first conductive region includes the conductive grid structure, the second conductive region is installed surrounding the first conductive region, and the second conductive region is connected to the conductive grid lines. The touch member includes a touch pattern and lead wires. The touch pattern is formed in the first conductive region, The lead wire is formed in the second conductive region, as described in claim 33.

35. The touch member according to claim 33, wherein the light transmittance of the touch member is 80% or more.

36. The touch member according to claim 33, wherein the haze of the touch member is 1.0% to 4.0%.

37. A method for manufacturing a touch member using a conductive film according to any one of claims 1 to 29, The plurality of conductive regions are configured to include a first conductive region and a second conductive region, the first conductive region includes the conductive grid structure, the second conductive region is installed surrounding the first conductive region, and the second conductive region is connected to the conductive grid lines. The aforementioned method, The steps include forming a touch pattern of the touch member in the first conductive region by laser etching, A method for manufacturing a touch member, comprising the step of forming lead wires of the touch member in the second conductive region by laser etching.

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