Power Module

Abstract

The half-bridge power module (10) comprises one or more substrates (13, 31, 32) having one or more metallizations (14, 33, 34) located on the one or more substrates (13, 31, 32), at least one high-side switching device (11), and at least one low-side switching device (12), each of the switching devices (11, 12) having a source or emitter contact (3, 3a, 3b) on a first side (4). , and have drain or collector contacts (5, 5a, 5b) on an opposite second side (6), with the source or emitter contact (3, 3a, 3b) of one of the switching devices (11, 12) facing and electrically connected to one of the metallizations (14, 33, 34) and the drain or collector contact (5, 5a, 5b) of the other one of the switching devices (11, 12) facing and electrically connected to one of the metallizations (14, 33, 34).

Description

[Technical field]

[0001] The present disclosure relates to a power module and a method for manufacturing the power module. The power module can be used in power electronics applications, such as a motor drive device or a power conversion device for an electric vehicle (EV).

[0002] The power module is a half-bridge power module comprising two groups of power semiconductor devices, one group comprising one or more high-side devices and the other group comprising one or more low-side devices.

[0003] EP 2 988 328 A1 and EP 3 246 945 A1 disclose examples of power modules in a half-bridge configuration.

[0004] Embodiments of the present disclosure relate to improved power modules, at least some of which may have a simplified design and / or improved switching behavior.

[0005] According to a first aspect, a half-bridge power module comprises one or more substrates comprising one or more metallizations located on the one or more substrates, at least one high side (HS) switching device, and at least one low side (LS) switching device. The half-bridge power module may comprise some high side switching devices and some low side switching devices. The switching devices on the same side may be connected in parallel with each other.

[0006] Each of the switching devices comprises a source or emitter contact on a first side of the switching device and a drain or collector contact on an opposite second side, with at least one of the switching devices having the drain or collector contact oriented and electrically connected to one of the metallizations and at least one of the switching devices having the source or emitter contact oriented and electrically connected to one of the metallizations.

[0007] Each of the switching devices may be in the form of, for example, an IGBT, a MOSFET, a JFET, a HEMT, or a MISFET. Depending on the type of switching device, the terms source contact or emitter contact are used, and drain contact or collector contact are used.

[0008] A power module may include some high-side switching devices and some low-side switching devices. The drain or collector contacts of the same side may be oriented in the same direction. As an example, the drain or collector contacts of the low-side switching devices may be oriented toward the metallization, and the drain or collector contacts of the high-side switching devices may be oriented in the opposite direction.

[0009] In other embodiments, the drain or collector contact of the high side switching device may face the metallization and the drain or collector contact of the low side switching device may face in the opposite direction.

[0010] The switching devices may be provided in the form of chip-scale packaged (CSP) units. Each unit may comprise only a single switching device. It is also possible that one or more of the units comprise several switching devices. As an example, a unit may comprise several switching devices of the same side connected in parallel.

[0011] The high-side switching device and the low-side switching device may have the same structure. If a CSP unit is provided, the unit may have the same structure. In this case, the design of the power module can be simplified and the manufacturing costs can be reduced. When manufacturing the power module, the same switching devices can be provided and connected to the metallization in different orientations.

[0012] In other embodiments, the structure of the high-side switching device is different from the structure of the low-side switching device. As an example, the structure of the gate contacts may be different. In one of the switching devices, the gate contact may be arranged for further connection on a first side, and in the other switching device, the gate contact may be arranged for further connection on a second side. In this case, the gate contacts of both switching devices may be directly connected to a gate terminal on the switching device.

[0013] The high-side switching device and the low-side switching device may be connected to the same one of the metallizations. By connecting the switching devices directly to the same metallization, the loop inductance of the power module is reduced and low parasitic inductance is achieved.

[0014] It is also possible that the high-side switching device and the low-side switching device are located on different metallizations and are electrically connected. The different metallizations may be located on separate substrates. The substrates may have identical layouts. This simplifies the manufacture of the substrates. Furthermore, the switching devices may be assembled and tested independently of each other and electrically connected at a later stage. The metallizations may be electrically connected by interconnect members, for example. The interconnect members may be in the form of wire bonds or metal clips, for example.

[0015] The power module may include a terminal structure including one or more terminals. The switching device may be disposed between the terminal structure and the substrate. The terminal may electrically contact the switching device from the top side, and the metallization may electrically contact the switching device from the bottom side. Each of the source or emitter contacts and each of the drain or collector contacts may be directly connected to either one of the metallizations or one of the terminals. Also, the gate contact may be directly connected to either one of the metallizations or one of the terminals. This allows for a design in which the switching device is not connected by wire bonds.

[0016] According to a further aspect, a method for manufacturing a half-bridge power module includes providing one or more substrates having one or more metallizations, at least one high-side switching device, and at least one low-side switching device, each of the switching devices having a source or emitter contact on a first side and a drain or collector contact on an opposing second side, the switching devices being disposed on the one or more substrates such that a drain or collector contact of one of the switching devices is oriented toward and electrically connected to one of the metallizations and a source or emitter contact of another of the switching devices is oriented toward and electrically connected to one of the metallizations.

[0017] A power module so produced may have any of the structural and / or functional characteristics of the power modules described above.

[0018] As an example, the switching devices may be provided by chip-scale package units. The high-side switching device and the low-side switching device may be provided with the same switching device. It is also possible that different switching devices are provided on different sides.

[0019] The switching devices may be located on the same metallization. In further embodiments, the switching devices may be located on different metallizations and tested independently of each other. The metallizations may then be connected by interconnect members.

[0020] The present disclosure includes several aspects and embodiments. Any feature described with respect to one of the aspects and embodiments is also disclosed herein with respect to the other aspects and embodiments, even if the respective feature is not explicitly mentioned in this context.

[0021] Further features, improvements, and advantages will become apparent from the following description of exemplary embodiments in conjunction with the figures, in which elements of the same structure and / or function may be referred to by the same reference numerals. It should be understood that the embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale. [Brief description of the drawings]

[0022] [Figure 1] FIG. 2 is a cross-sectional view of a switching device. [Diagram 2] FIG. 2 illustrates a top view of a power module, according to one embodiment. [Diagram 3] FIG. 2 is a schematic circuit diagram of a half bridge. [Figure 4] FIG. 2 is a cross-sectional view of a power module having terminals according to one embodiment. [Diagram 5] FIG. 5 is a cross-sectional view of the power module of FIG. 4 with an illustration of the commutation paths. [Figure 6]FIG. 13 is a cross-sectional view of a power module having terminals according to a further embodiment. [Figure 7] FIG. 13 is a perspective view of a power module according to a further embodiment. [Figure 8A] FIG. 8 is a perspective view of the power module of FIG. 7 having a first terminal layer. [Figure 8B] FIG. 8 is a perspective view of the power module of FIG. 7 having a second terminal layer. [Figure 8C] FIG. 8 is a perspective view of the power module of FIG. 7 having a third terminal layer. [Figure 9A] FIG. 8 is a diagram of coupled inductance for the high side switching device of the embodiment of FIG. 7. [Figure 9B] FIG. 8 is a diagram of coupled inductance for the low-side switching device of the embodiment of FIG. 7. [Figure 10] FIG. 13 is a top view of a power module according to a further embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] 1 shows a switching device 1 comprising a semiconductor body 2, a source or emitter contact 3 on a first side 4, and a drain or collector contact 5 on an opposing second side 6. The switching device 1 also comprises a gate contact 7 located on the first side 4.

[0024] The switching device 1 may be in the form of, for example, an IGBT, a MOSFET, a JFET, a HEMT, or a MISFET. Depending on the type of switching device 1, the terms source contact or emitter contact are used, and the terms drain contact or collector contact are used. In the following, for the sake of simplified naming, the source or emitter contact 3 is called the "source" contact 3, and the drain or collector contact 5 is called the "drain" contact 5. It should be understood that the emitter contact and the collector contact are also included in this naming.

[0025] The switching device 1 is in the form of a unit 8, such as a Chip Scale Package (CSP) unit. The semiconductor body 2 and some of the contacts 3, 5, 7 are embedded in an insulating material 9, such as, for example, epoxy resin. The semiconductor body 2 may be prepackaged, for example, by PCB embedding or epoxy molding. The contacts 3, 5, 7 protrude from the insulating material 9. Several prefabricated units 8 can be provided in an assembly process and assembled to form a power module in the form of a half bridge.

[0026] The CSP structure with top and bottom metallization provides additional thermal capacitance that is beneficial during overload and surge conditions.

[0027] 2 shows a power module 10 comprising several low-side switching devices 11 and several high-side switching devices 12. The switching devices 11, 12 are connected to form a half-bridge. The switching devices 11, 12 are arranged in two rows, each row comprising a low-side switching device 11 and a high-side switching device 12, and in two columns, one column comprising only low-side switching devices 11 and the other column comprising only high-side switching devices 12. All of the switching devices 11, 12 may have the layout of the switching devices 1 as shown in FIG. 1.

[0028] The switching devices 11, 12 are located on a substrate 13, which may for example comprise a ceramic material. The metal-ceramic substrate enhances cooling performance. The substrate 13 comprises a metallization 14 and a further metallization 15 for the electrical connection of the switching devices 11, 12. The power module 10 may comprise only a single substrate 13.

[0029] The low-side switching devices 11 are positioned such that a first side 4 faces upwards, i.e., away from the substrate 13, and a second side 6 faces downwards, i.e., towards the substrate 13. A drain contact 5a of each of the low-side switching devices 11 is connected to a metallization 14. A source contact 3a and a gate contact 7a face upwards and can be connected to a terminal.

[0030] The high-side switching device 12 is inverted so that the first side 4 faces downwards and the second side 6 faces upwards. The drain contact 5b can thus, for example, face upwards and be connected to a terminal. The source contact 3b is connected to a metallization 14 and the gate contact 7b is connected to a further metallization 15. The metallization 14 is provided for conducting AC current. The source contact 3b is located at a distance from the associated gate contact 7b at least as large as the distance between the metallization 14 and the further metallization 15, so that it can provide a respective electrical connection to the metallizations 14, 15.

[0031] Therefore, during the module assembly process, the same unit 8 can be provided with different orientations relative to the high side switching device 12 and the low side switching device 11, resulting in lower manufacturing and testing costs and simplified design.

[0032] The source contact 3b of the high-side switching device 12 and the drain contact 5a of the low-side switching device 11 are connected with the same substrate metallization 14. The substrate metallization 14 can then be connected to the AC terminals. The DC+ and DC- terminals can be connected from the other side. The main connections of the terminals can be in parallel with each other. This connection structure reduces the loop inductance of the power module 10 and allows for low parasitic inductance. In addition, it provides a balanced gate signal inductance per switching device.

[0033] 3 shows an electrical circuit in the form of a half bridge. High side switching device 12 and low side switching device 11 are connected in series between DC+ terminal 17 and DC- terminal 16, with the AC terminals connected to the emitter or source of high side switching device 12 and the collector or drain of low side switching device 11.

[0034] The switching devices 11, 12 may be MOSFET switching devices and may, for example, comprise diodes connected between the collectors 5a, 5b and the emitters 3a, 3b.

[0035] A half-bridge power module may comprise several low-side switching devices 11 connected in parallel with each other and several high-side switching devices 12 connected in parallel with each other, as shown in FIG.

[0036] 4 shows a cross-sectional view of a power module 10 having a terminal structure. The layout can be the same as that of the power module 10 in FIG.

[0037] The DC- terminal 16 and the DC+ terminal 17 are part of a terminal structure 27. The terminal structure 27 may be in the form of a printed circuit board (PCB) 19. In particular, the PCB 19 may be a thick copper PCB. The DC- terminal 16 is directly connected to the source contact 3a of the LS switching device 11. The connection may be made, for example, by soldering or sintering. The AC terminal (not shown here) may be directly connected, for example, to the metallization 14 at the edge of the substrate 13. A direct connection includes each terminal being integrally formed with a connection directly connected to the respective contact.

[0038] Further shown are a connection structure 20 for connecting to an auxiliary terminal for monitoring power at the source contact 3b of the high side switching device 12, and a connection structure 21 for connecting to the gate contact 7b of the HS switching device 12 for controlling a gate signal. The connection structures 20, 21 are connected to a printed circuit board 19. The gate connection structure 21 is connected to a HS gate terminal 26 integrated in the PCB 19. The connection structures 20, 21 can be soldered to a terminal structure 27.

[0039] In addition, DC capacitors and / or snubber circuits may be integrated into the PCB to avoid oscillations during switching and enable ultra-fast switching with wide bandgap semiconductors.

[0040] All connections to the terminal structure 27 may be made by soldering or sintering. All connections may be made in a single step.

[0041] Figure 5 shows the power module 10 of Figure 4 with a diagram of the main power paths in the DC+ and DC- terminal structures in the PCB 19. The main power paths 22, 23 in the PCB 19 are arranged in parallel with each other, so that the loop inductances cancel each other out, thereby reducing the parasitic stray inductance.

[0042] 6 shows a further embodiment of the power module 10 in a cross-sectional view with a terminal structure 27. The layout can be the same as the power module 10 of FIG.

[0043] The difference with respect to the embodiment of Figure 4 is the connection of the control signal paths to the terminal structure 27. The connection structure 20 for connecting the HS source and LS drain 5a, 3b to the auxiliary terminal is in the form of a press-fit pin inserted into a press-fit receptacle in the terminal structure 27. The connection structure 21 connecting the HS gate contact 7b is also in the form of a press-fit pin inserted into a press-fit receptacle in the terminal structure. The low side gate contact 7a is also in the form of a press-fit pin inserted into a press-fit receptacle in the terminal structure.

[0044] In this embodiment too, the power terminals 16,17 are soldered to the LS and HS switching devices 11,12.

[0045] 7 shows in a perspective view a further embodiment of a power module 10. Here too, the low-side switching device 11 and the high-side switching device 12 can be formed as a unit 8 identical to the embodiment described above. Here too, the low-side switching devices 11 face their source contacts 3a upwards and the high-side switching devices 11 are inverted and face their source contacts 3b downwards.

[0046] 5, two columns of low-side switching devices 11 and two columns of high-side switching devices 12 are provided. The layout is mirror symmetrical with respect to a plane A perpendicular to the main surface of the substrate 13. Furthermore, the power module 10 comprises four rows instead of two.

[0047] The power module 10 comprises a metallization 14, on which the drain contact 5a of the low-side switching device 11 and the source contact 3a of the high-side switching device 12 are arranged and directly electrically connected thereto. Furthermore, the power module 10 comprises a further metallization 15, on which the gate contact 7b of the high-side switching device 12 is arranged and directly electrically connected thereto. The further metallization 15 surrounds the metallization 14 on three sides.

[0048] The switching devices 11, 12 may be connected to the metallizations 14, 15, for example by chip sintering. Due to the connection structure, no wire bonds are required to connect the chip contacts to the metallizations.

[0049] 8A, 8B, and 8C show the power module 10 of FIG.

[0050] 8A shows a power module 10 having an LS gate terminal 24 connected to the gate contact 7a of the low-side switching device 11. The LS gate terminal 24 is integrally formed with a strip-like main connection 25 and is connected to two rows of LS switching devices 11.

[0051] The AC terminal 18 is connected directly to the metallization 14 at the edge of the power module 10. The HS gate terminal 26 is connected directly to a further metallization 15 at the edge of the power module 10. The auxiliary terminal 36 is also connected directly to the metallization 14.

[0052] FIG. 8B shows a power module 10 having a DC-terminal 16 connected to the source contact 3b of the low-side switching device 11.

[0053] A main connection part 28 formed integrally with the DC-terminal 16 is disposed above the main connection part 25 of the LS gate terminal 24. The main connection part 28 of the DC-terminal 16 is plate-shaped and completely covers the main connection part 25 of the LS gate terminal 24. The main connection part 28 of the DC-terminal is wide enough to allow direct contact with the source contact 3b.

[0054] At the edge of the power module 10 an auxiliary terminal 37 is provided which is at the same potential as the DC- terminal 16 .

[0055] 8C shows a power module 10 having a DC+ terminal 17 connected to the drain contact 5b of the high side switching device 12. Located above the main connection 28 of the DC− terminal 16 is a main connection 30 formed integrally with the DC+ terminal 17.

[0056] The main connection portion 30 of the DC+ terminal 17 is plate-shaped and completely covers the main connection portion 28 of the DC- terminal 16. The main connection portion 30 of the DC+ terminal 17 is plate-shaped and completely covers the main connection portion 28 of the DC- terminal 16. The main connection portion 30 of the DC+ terminal 17 is wider than the main connection portion 28 of the DC- terminal 16 so that the drain contact 5b can be in direct contact with it.

[0057] At the edge of the power module 10 is provided an auxiliary terminal 38 which is at the same potential as the DC+ terminal 17 .

[0058] All terminals may be in the form of a lead frame. The terminals may for example be laser welded to the switching devices 11, 12. Final encapsulation may be done with epoxy molding.

[0059] Figure 9A shows the coupling inductance Lc between the associated commutation loop and gate loop for each of the HS switching devices 12 in the embodiment shown in Figure 7. Figure 9B shows the coupling inductance Lc between the associated commutation loop and gate loop for each of the LS switching devices 11 in the embodiment shown in Figure 7. The coupling inductance Lc is shown for each of the HS and LS switching devices numbered 1 through 8.

[0060] The coupling inductance is close to 0, showing a good balance for both HS and LS. Furthermore, the design allows for a very low stray inductance, which is about 0.5 nH. The electromagnetic performance allows for higher switching frequencies for wide bandgap semiconductors such as SiC or GaN semiconductors.

[0061] 10 shows a power module 10 according to a further embodiment. As in the previous embodiment, the power module 10 comprises a LS switching device 11 with a drain contact 5a facing towards the first substrate 31 and a HS switching device 12 with a drain contact 5b facing in the opposite direction.

[0062] As distinguished from the embodiment of FIG. 4, the drain contact 5a of the LS switching device 11 is located on and electrically connected to a first metallization 33, and the HS switching device 12 is located on and electrically connected to a separate second metallization 34. The first metallization 33 is electrically connected to the second metallization 34 by an interconnect member 35. The interconnect member 35 may be in the form of, for example, a metal clip or a wire bond. The interconnect member 35 provides a common AC connection to the LS and HS switching devices 11, 12.

[0063] The first metallization 33 is located on a first substrate 31 and the second metallization 34 is located on a separate second substrate 32. The substrates may be assembled on a base plate (not shown here). The substrates 31, 32 may have an identical layout. The substrates 31, 32 may have a simple layout so that manufacturing costs can be reduced. As shown here, each substrate may only comprise a single metallization 33, 34. The single metallization 33, 34 provides the AC connection.

[0064] As a further distinction from the embodiment of Fig. 4, the LS switching device 11 and the HS switching device have different layouts. Both devices may, for example, be formed in the form of separate CSP units. The layout of the LS switching device 11 is similar to the layout shown in Fig. 1.

[0065] However, the HS switching device 12 comprises a gate contact 7b that extends from the side of the semiconductor body 2 where the source contact 3b is located to the side of the HS switching device 12 where the drain contact 5b is located. Accordingly, the HS gate contact 7b and the HS drain contact 5b are located at terminals on the same side of the switching device 12 and are electrically connected.

[0066] The LS source contact 3a is connected to a DC- terminal 16 and the HS drain contact 5b is connected to a DC+ terminal 17. The power terminals 16, 17 may be integral parts of a thick copper PCB, for example. The gate contacts 7a, 7b may be electrically connected to a gate terminal in the PCB.

[0067] A power module 10 may comprise several LS switching devices 11 and several HS switching devices. The LS switching devices 11 may be located on a first metallization 33 and the HS switching devices 12 may be located on a second metallization 34. For example, several parallel connected LS switching devices 11 may be provided in a single CSP unit and several parallel connected HS switching devices 12 may be provided in a further single CSP unit.

[0068] In the method for manufacturing the power module 10 of this embodiment, two distinctly different units 8a, 8b for the LS and HS switching devices 11, 12 are provided. The units are connected to separate substrates 31, 32 and can be tested independently. The substrates 31, 32 may have an identical design. The substrates 31, 32 can then be assembled on a common base plate and the metallizations 33, 34 can be electrically connected by an interconnection member 35 to form a half-bridge connection. The interconnection member 35 may be connected to the metallizations 33, 34 by, for example, wire bonding, laser welding, or ultrasonic welding.

[0069] In the embodiment shown in Figures 4 and 10, the source contacts 3, 3a, 3b and the drain contacts 5, 5a, 5b are connected directly to either the terminals 16, 17 or to the metallizations 14, 33, 34 on the substrates 13, 31, 32. Also, the gate contacts 7, 7a, 7b are connected directly to either the terminals 24, 26 or to the further metallizations 15. In this case, no wirebond connections are required within the power module 10. This simplifies the design and reduces the manufacturing costs. In addition, the electromagnetic performance can be improved.

[0070] Reference sign 1. Switching Devices 2. Semiconductor body 3 Source or emitter contact 3a LS source or emitter contact 3b HS source or emitter contact 4. First aspect 5 Drain or Collector Contact 5a LS drain or collector contact 5b HS drain or collector contact 6. The Second Aspect 7 Gate Contact 7a LS gate contact 7b HS gate contact 8 units 8a LS unit 8b HS unit 9. Insulating Materials 10 Power Module 11 LS switching device 12 HS Switching Devices 13 Substrate 14 Metallization 15 Further Metallization 16 DC-terminal 17 DC+ terminal 18 AC terminal 19 Printed Circuit Board (PCB) 20 Connection structure 21 Connection structure 22 Power path (DC-) 23 Power Path (DC+) 24 LS gate terminal 25 Main Connection 26 HS gate terminal 27 Terminal structure 28 DC-Terminal Main Connection 30 DC+ terminal main connection 31 First substrate 32 Second Board 33 First Metallization 34 Second Metallization 35 Interconnecting members 36 HS auxiliary terminal 37 LS auxiliary terminal 38 Further auxiliary terminals A Symmetry plane Lc coupling inductance

Claims

1. 1. A half-bridge power module (10) comprising one or more substrates (13, 31, 32) having one or more metallizations (14, 33, 34) located thereon, at least one high-side switching device (11) and at least one low-side switching device (12), each of said switching devices (11, 12) comprising a source or emitter contact (3, 3a, 3b) on a first side (4) and a drain or collector contact (5, 5a, 5b) on an opposing second side (6), A half-bridge power module (10), wherein the drain or collector contact (5, 5a, 5b) of one of the switching devices (11, 12) is oriented and electrically connected to one of the metallizations (14, 33, 34) and the source or emitter contact (3, 3a, 3b) of another of the switching devices (11, 12) is oriented and electrically connected to one of the metallizations (14, 33, 34).

2. 2. The half-bridge power module of claim 1, wherein the source or drain or collector contact (5, 5a, 5b) of the one of the switching devices (11, 12) is connected to one of the same metallizations (14, 33, 34) as the source or emitter contact (3, 3a, 3b) of the other one of the switching devices (11, 12).

3. 10. A half-bridge power module according to any of the preceding claims, wherein each of the switching devices (11, 12) is formed by a unit (8, 8a, 8b) in the form of a chip-scale package unit.

4. 10. The half-bridge power module according to any of the preceding claims, wherein the low-side switching device (11) and the high-side switching device (12) have the same structure.

5. 5. The half-bridge power module of claim 4, wherein each of the switching devices (11) has a gate contact (7, 7a, 7b), both gate contacts (7, 7a, 7b) arranged to further connect to the first side (4) of the respective switching device (11, 12).

6. 10. The half-bridge power module according to any of the preceding claims, wherein the low side switching device (11) and the high side switching device (12) have different structures.

7. 7. The half-bridge power module of claim 6, wherein each of the switching devices (11) has a gate contact (7, 7a, 7b), one of the gate contacts (7, 7a, 7b) arranged to further connect to the first side (4) of the respective switching device (11, 12), and another of the gate contacts (7, 7a, 7b) arranged to further connect to the second side (6) of the respective switching device (11, 12).

8. 10. A half-bridge power module according to any of the preceding claims, comprising several high-side switching devices (11) and several low-side switching devices (12), the source or emitter contacts (3, 3a, 3b) of the switching devices (11, 12) on the same side being oriented in the same direction.

9. 10. A half-bridge power module according to any of the preceding claims, wherein the source or emitter contact (3, 3a, 3b) of the one of the switching devices (11, 12) is connected to a first metallization (33) and the drain or collector contact (5, 5a, 5b) of the other one of the switching devices (11, 12) is connected to a different second metallization (34).

10. 10. The half-bridge power module of claim 9, further comprising an interconnection member (35) electrically connecting said first metallization (33) and said second metallization (34).

11. The half-bridge power module of claim 10 , wherein the different metallizations are located on different substrates.

12. 10. A half-bridge power module according to any of the preceding claims, comprising a terminal structure (27) comprising a DC+ terminal (17) and a DC- terminal (16), the switching devices (11, 12) being located between the terminal structure (27) and the substrate (13, 31, 32), each of the source or emitter contacts (3, 3a, 3b) and each of the drain or collector contacts (5, 5a, 5b) being directly connected either to one of the metallizations (14, 33, 34) or to one of the DC- and DC+ terminals (16, 17).

13. 10. The half-bridge power module according to any of the preceding claims, wherein the drain or collector contact (5, 5a, 5b) of the low-side switching device (11) is oriented and electrically connected to one of the metallizations (14, 33, 34) and the source or emitter contact (3, 3a, 3b) of the high-side switching device (12) is oriented and electrically connected to one of the metallizations (14, 33, 34).

14. providing one or more substrates (13, 31, 32) having one or more metallizations (14, 33, 34), at least one high-side switching device (11), and at least one low-side switching device (12), each of said switching devices (11, 12) comprising a source or emitter contact (3, 3a, 3b) on a first side (4) and a drain or collector contact (5, 5a, 5b) on an opposing second side (6); Arranging the switching devices (11, 12) on the one or more substrates (13, 31, 32) such that the drain or collector contact (5, 5a, 5b) of one of the switching devices (11, 12) is oriented toward and electrically connected to one of the metallizations (14, 33, 34) and the source or emitter contact (3, 3a, 3b) of the other of the switching devices (11, 12) is oriented toward and electrically connected to one of the metallizations (14, 33, 34); A method for manufacturing a half-bridge power module (10), comprising:

15. 15. The method according to claim 14, wherein the high-side switching device (11) and the low-side switching device (12) are provided with identical switching devices (11).

16. 15. The method according to claim 14, wherein the high-side switching device (11) and the low-side switching device (12) are provided with different switching devices (11).

17. The method according to any of claims 14 to 16, wherein each of the switching devices (11, 12) is provided by a chip-scale package unit.

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