Dicing and die bonding integrated film and manufacturing method thereof, and manufacturing method of semiconductor device

Abstract

To provide a dicing / die bonding integrated film which enables sufficient width of a calf to be ensured even when a narrow blade is used. and a manufacturing method thereof.SOLUTION: A film 10 comprises: a substrate layer 1; a pressure-sensitive adhesive layer 3 made of an active energy ray-curable adhesive having a first surface F1 facing the substrate layer 1 and a second surface F2 on the opposite side thereof; and an adhesive layer 5 provided so as to cover the central portion of the second surface F2. The active energy ray-curable adhesive includes a (meth) acrylic resin having a chain-polymerizable functional group, and the functional group is at least one selected from an acryloyl group and a methacryloyl group, and the content of the functional group in the (meth) acrylic resin is 0.4 mmol / g or more.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a dicing / die bonding integrated film and a manufacturing method thereof, and a manufacturing method of a semiconductor device. [Background technology]

[0002] A semiconductor device is manufactured through the following steps. First, an adhesive film for dicing is attached to a wafer, and a dicing step is performed to divide the wafer into individual chips. Then, an expanding step, a pick-up step, a mounting step, a die bonding step, etc. are performed.

[0003] In the manufacturing process of a semiconductor device, a film called a dicing-die bonding integrated film is used. This film has a structure in which a base layer, an adhesive layer, and an adhesive layer are laminated in this order, and is used, for example, as follows. First, the adhesive layer side is attached to a wafer, and the wafer is diced while being fixed with a dicing ring. This causes the wafer to be divided into a plurality of chips. Next, the adhesive layer is irradiated with active energy rays to weaken the adhesive force of the adhesive layer to the adhesive layer, and then the chip is picked up from the adhesive layer together with the adhesive piece formed by dividing the adhesive layer. After that, the semiconductor device is manufactured through a process of mounting the chip on a substrate or the like through the adhesive piece. The laminate consisting of the chip obtained through the dicing process and the adhesive piece attached thereto is called DAF (Die Attach Film).

[0004] As described above, an adhesive layer (dicing film) whose adhesive strength is weakened by irradiation with active energy rays is called an active energy ray curing type. In contrast, an adhesive layer whose adhesive strength remains constant without being irradiated with active energy rays in the manufacturing process of a semiconductor device is called a pressure-sensitive type. A dicing-die bonding integrated film having a pressure-sensitive adhesive layer has the advantage that users (mainly semiconductor device manufacturers) do not need to carry out a process of irradiating active energy rays, and no equipment is required for this purpose. Patent Document 1 discloses a dicing-die bonding integrated film that can be said to be an active energy ray curing type in that the adhesive layer contains a component that is cured by active energy rays, but can also be said to be a pressure-sensitive type in that only a specified part of the adhesive layer is irradiated with active energy rays in advance, and the user does not need to irradiate active energy rays in the manufacturing process of a semiconductor device. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent No. 4443962 Summary of the Invention [Problem to be solved by the invention]

[0006] Meanwhile, semiconductor devices, particularly devices called memories, are widely used in personal computers, servers, smartphones, etc., and there is a demand for miniaturization and high integration of circuits. Along with such miniaturization and high integration of circuits, narrowing of wiring widths and distances between wirings in circuit designs on wafers is also being considered.

[0007] On the other hand, in the design of a wafer, it is necessary to set a region that does not have a circuit, called a scribe line, between chips because the chips are cut by a blade in the dicing process, and there is also a demand for narrowing the scribe line. The dicing process is performed using a blade that rotates at high speed. Therefore, in order to narrow the scribe line, it is necessary to use a narrow blade. However, when a narrow blade (for example, a blade with a width of about 10 to 50 μm) is used, the gap between chips after the dicing process (hereinafter, this gap may be referred to as the "kerf (groove) width") may not be sufficiently secured, and a phenomenon in which two or more chips are picked up at the same time in the pick-up process (hereinafter, this phenomenon may be referred to as the "double die") may occur. When the double die occurs, production efficiency decreases as a result.

[0008] The expanding process, which follows the dicing process, separates the individual chips to expand the width of the kerfs. However, as chips become smaller, the number of kerf lines to be separated increases, dispersing the effect of the expanding process, limiting its effectiveness.

[0009] The present disclosure has been made in consideration of the above circumstances, and has as its main object to provide an integrated dicing and die bonding film and a manufacturing method thereof that can ensure a sufficient kerf width even when a narrow blade is used. [Means for solving the problem]

[0010] One aspect of the present disclosure relates to a method for manufacturing a semiconductor device, which includes a first step of preparing a dicing-die bonding integrated film including a base layer, an adhesive layer made of an active energy ray curable adhesive having a first surface facing the base layer and a second surface opposite to the first surface, and an adhesive layer provided so as to cover a central portion of the second surface of the adhesive layer, a second step of attaching a wafer to the adhesive layer of the dicing-die bonding integrated film and attaching a dicing ring to the second surface of the adhesive layer, and a third step of dicing the wafer together with the adhesive layer and the adhesive layer into a plurality of chips by blade dicing using a blade to form cut bodies. The method includes a fourth step of picking up the chip from the adhesive layer of the cut body together with the adhesive piece obtained by dividing the adhesive layer, and a fifth step of mounting the chip on a substrate or another chip via the adhesive piece, the adhesive layer having a first region corresponding to the region of the adhesive layer to which the wafer is attached and a second region to which the dicing ring is attached, the first region being an area in a state in which the adhesive strength is reduced compared to the second region by irradiation with active energy rays, and in the third step, the width of the kerf (kerf width) formed in the adhesive layer of the cut body by blade dicing is 75% or more of the width of the blade (blade width). According to the study by the present inventors, it was found that when the width of the kerf formed in the adhesive layer of the cut body by blade dicing is 75% or more of the width of the blade, there is a tendency that double die can be suppressed. Therefore, according to the above-mentioned method for manufacturing a semiconductor device, it is possible to improve production efficiency.

[0011] The width of the blade (blade width) may be 10 to 50 μm. Even when such a relatively narrow blade is used, the double die can be suppressed more sufficiently.

[0012] The chips have a square or rectangular shape and an area of ​​200 mm 2 It may be the following:

[0013] One aspect of the present disclosure relates to a dicing / die bonding integrated film, which includes a base layer, a pressure-sensitive adhesive layer made of an active energy ray-curable pressure-sensitive adhesive having a first surface facing the base layer and a second surface opposite to the first surface, and an adhesive layer provided so as to cover the center of the second surface, the pressure-sensitive adhesive layer having a first region including at least a region in the adhesive layer corresponding to a wafer attachment position and a second region surrounding the first region, the first region being a region in a state in which the adhesive strength is reduced as compared with the second region due to irradiation with active energy rays, the active energy ray-curable pressure-sensitive adhesive containing a (meth)acrylic resin having a chain-polymerizable functional group, the functional group being at least one selected from an acryloyl group and a methacryloyl group, and the content of the functional group in the (meth)acrylic resin being 0.4 mmol / g or more.

[0014] The above-mentioned dicing / die bonding integrated film can be suitably used in the above-mentioned semiconductor device manufacturing method, and even if a narrow blade is used, it is possible to ensure a sufficient kerf width. By using such a dicing / die bonding integrated film, it is possible to suppress double die, and as a result, it is possible to improve production efficiency.

[0015] The active energy ray curable pressure-sensitive adhesive may further contain a crosslinking agent. When such a crosslinking agent is further contained, the content of the crosslinking agent relative to the total mass of the active energy ray curable pressure-sensitive adhesive may be 0.1 to 15 mass %. The crosslinking agent may be a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more hydroxyl groups in one molecule.

[0016] The adhesive layer may be made of an adhesive composition containing a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler.

[0017] The integrated dicing and die bonding film is used to bond wafers with an area of ​​200 mm 2The present invention may be applied to a manufacturing process of a semiconductor device including the following step of singulating into a plurality of chips.

[0018] One aspect of the present disclosure relates to a method for producing a dicing-die bonding integrated film. A first aspect of this production method includes, in this order, a step of producing a laminate including a pressure-sensitive adhesive layer made of an active energy ray curable pressure-sensitive adhesive and an adhesive layer formed on the surface of the pressure-sensitive adhesive layer on the surface of a base layer, and a step of irradiating an area that will become the first area of ​​the pressure-sensitive adhesive layer included in the laminate with active energy rays. A second aspect of this production method includes, in this order, a step of forming a pressure-sensitive adhesive layer made of a composition whose adhesive strength decreases when irradiated with active energy rays on the surface of a base layer, a step of irradiating an area that will become the first area of ​​the pressure-sensitive adhesive layer with active energy rays, and a step of laminating an adhesive layer on the surface of the pressure-sensitive adhesive layer after irradiating with active energy rays. Effect of the Invention

[0019] According to the present disclosure, a dicing / die bonding integrated film capable of ensuring a sufficient kerf width even when a narrow blade is used, and a manufacturing method thereof are provided. Also, according to the present disclosure, a manufacturing method of a semiconductor device using such a dicing / die bonding integrated film is provided. According to such a manufacturing method of a semiconductor device, it is possible to suppress double die and improve production efficiency. [Brief description of the drawings]

[0020] [Figure 1] FIG. 1(a) is a plan view showing one embodiment of a dicing / die bonding integrated film, and FIG. 1(b) is a schematic cross-sectional view taken along line BB shown in FIG. 1(a). [Diagram 2] FIG. 2 is a schematic diagram showing a state in which a dicing ring is attached to the peripheral edge of the adhesive layer of a dicing-die bonding integrated film, and a wafer is attached to the surface of the adhesive layer. [Diagram 3]FIG. 3 is a schematic cross-sectional view of an embodiment of a semiconductor device. [Figure 4] 4(a), 4(b), 4(c), and 4(d) are cross-sectional views that diagrammatically show the process of manufacturing a DAF (a laminate of a chip and an adhesive piece). [Diagram 5] FIG. 5(a) is a plan view showing a schematic diagram of one embodiment of the cut body, and FIG. 5(b) is an enlarged view of a portion E in FIG. 5(a). [Figure 6] 6A to 6C are cross-sectional views each showing a schematic process for manufacturing the semiconductor device shown in FIG. [Figure 7] 7A to 7C are cross-sectional views that diagrammatically show the process of manufacturing the semiconductor device shown in FIG. [Figure 8] 8A to 8C are cross-sectional views each showing a schematic process for manufacturing the semiconductor device shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are denoted by the same reference numerals, and duplicated descriptions will be omitted. Note that the present invention is not limited to the following embodiments. In this specification, (meth)acrylic means acrylic or methacrylic, and the same applies to other similar expressions such as (meth)acrylate.

[0022] <Dicing and die bonding integrated film> Fig. 1(a) is a plan view showing a dicing / die bonding integrated film according to this embodiment, and Fig. 1(b) is a schematic cross-sectional view taken along line BB in Fig. 1. The dicing / die bonding integrated film 10 (hereinafter sometimes simply referred to as "film 10") is a film for bonding a wafer W to a substrate having an area of ​​200 mm 2 The method can be suitably used in a manufacturing process of a semiconductor device including the following step of singulating into a plurality of chips (and the subsequent picking up step) (see FIG. 4(c) and FIG. 4(d)).

[0023] The film 10 comprises, in this order, a base layer 1, a pressure-sensitive adhesive layer 3 having a first surface F1 facing the base layer 1 and a second surface F2 opposite to the first surface F1, and an adhesive layer 5 provided so as to cover a central portion of the second surface F2 of the pressure-sensitive adhesive layer 3. In the present embodiment, an embodiment is shown in which one laminate of the pressure-sensitive adhesive layer 3 and the adhesive layer 5 is formed on the square base layer 1, but an embodiment may also be such that the base layer 1 has a predetermined length (e.g., 100 m or more) and the laminates of the pressure-sensitive adhesive layer 3 and the adhesive layer 5 are arranged at a predetermined interval so as to be aligned in the longitudinal direction.

[0024] The film 10 comprises, in this order, a base layer 1, a pressure-sensitive adhesive layer 3 having a first surface F1 facing the base layer 1 and a second surface F2 opposite to the first surface F1, and an adhesive layer 5 provided so as to cover a central portion of the second surface F2 of the pressure-sensitive adhesive layer 3. In the present embodiment, an embodiment is shown in which one laminate of the pressure-sensitive adhesive layer 3 and the adhesive layer 5 is formed on the square base layer 1, but an embodiment may also be such that the base layer 1 has a predetermined length (e.g., 100 m or more) and the laminates of the pressure-sensitive adhesive layer 3 and the adhesive layer 5 are arranged at a predetermined interval so as to be aligned in the longitudinal direction.

[0025] (Adhesive layer) The adhesive layer 3 has a first region 3a including at least a region Rw corresponding to the attachment position of the wafer W in the adhesive layer 5, and a second region 3b located so as to surround the first region 3a. The dashed lines in FIG. 1(a) and FIG. 1(b) indicate the boundary between the first region 3a and the second region 3b. The first region 3a and the second region 3b are made of the same composition (active energy ray curable adhesive) before irradiation with active energy rays. The first region 3a is an area in a state in which the adhesive strength is reduced compared to the second region 3b by irradiation with active energy rays. The second region 3b is an area to which the dicing ring DR is attached (see FIG. 2). The second region 3b is an area not irradiated with active energy rays and has high adhesive strength to the dicing ring DR. The active energy rays may be at least one type selected from ultraviolet rays, electron beams, and visible rays, and may be ultraviolet rays. The amount of irradiation of the active energy rays is, for example, 10 to 1000 mJ / cm2 and 100-700mJ / cm 2 , or 100 to 500 mJ / cm 2 It may be.

[0026] The adhesive layer before irradiation with active energy rays is made of an active energy ray curable adhesive containing a (meth)acrylic resin. The second region 3b not irradiated with active energy rays may have the same composition as the adhesive layer before irradiation with active energy rays. The components contained in the active energy ray curable adhesive are described in detail below.

[0027] [(Meth)acrylic resin] The active energy ray curable adhesive contains a (meth)acrylic resin having a chain polymerizable functional group. When such a (meth)acrylic resin is contained, the functional group is at least one selected from an acryloyl group and a methacryloyl group. The content of the functional group in the (meth)acrylic resin is 0.4 mmol / g or more. The content of the functional group in the (meth)acrylic resin may be 0.5 mmol / g or more, 0.6 mmol / g or more, 0.7 mmol / g or more, 0.8 mmol / g or more, or 0.9 mmol / g or more, and may be 2.0 mmol / g or less, 1.8 mmol / g or less, 1.5 mmol / g or less, 1.2 mmol / g or less, or 1.0 mmol / g or less. When the content of the functional group is 0.4 mmol / g or more, there is a tendency that a region (first region 3a in FIG. 1) in which the adhesive strength is appropriately reduced by irradiation with active energy rays is easily formed. The inventors believe that the kerf of the adhesive layer 3 formed by dicing is generated by the release of stress caused by cure shrinkage caused by curing by irradiation with active energy rays when forming the first region 3a of the adhesive layer 3, and that the width (kerf width) of the adhesive layer 3 is likely to expand if the cure shrinkage of the (meth)acrylic resin or the like in the adhesive layer 3 is large. Therefore, by making the content of the functional group 0.4 mmol / g or more, the cure shrinkage of the adhesive layer 3 is sufficient, and even if a narrow blade is used, it is possible to ensure a sufficient kerf width. On the other hand, by making the content of the functional group 2.0 mmol / g or less, there is a tendency that excellent pick-up properties are easily achieved.

[0028] The (meth)acrylic resin can be obtained by synthesis using a known method. Examples of the synthesis method include solution polymerization, suspension polymerization, emulsion polymerization, bulk polymerization, precipitation polymerization, gas phase polymerization, plasma polymerization, and supercritical polymerization. In addition, the types of polymerization reactions include radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, immodal polymerization, and the like, as well as ATRP (atom transfer radical polymerization) and RAFT (reversible addition-fragmentation chain transfer polymerization). Among these, synthesis by radical polymerization using a solution polymerization method has advantages such as good economic efficiency, high reaction rate, ease of polymerization control, and the like, as well as the ability to use the resin solution obtained by polymerization as it is for blending.

[0029] Here, a method for synthesizing a (meth)acrylic resin will be described in detail, taking as an example a method for obtaining a (meth)acrylic resin by radical polymerization using a solution polymerization method.

[0030] The monomer used in synthesizing the (meth)acrylic resin is not particularly limited as long as it has one (meth)acryloyl group in one molecule. Specific examples thereof include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, lauryl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, stearyl (meth)acrylate, and behenyl (meth)acrylate. aliphatic (meth)acrylates such as butyl acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl)succinate; alicyclic (meth)acrylates such as cyclopentyl (meth)acrylate, cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, isobornyl (meth)acrylate, mono(2-(meth)acryloyloxyethyl)tetrahydrophthalate, and mono(2-(meth)acryloyloxyethyl)hexahydrophthalate;Benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxypolyethylene glycol (meth)acrylate, nonyl phen Aromatic (meth)acrylates such as phenoxy polyethylene glycol (meth)acrylate, phenoxy polypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, and 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate; 2-tetrahydrofurfuryl (meth)acrylate Heterocyclic (meth)acrylates such as N-(meth)acryloyloxyethylhexahydrophthalimide and 2-(meth)acryloyloxyethyl-N-carbazole, their caprolactone-modified products, ω-carboxy-polycaprolactone mono(meth)acrylate, glycidyl (meth)acrylate, α-ethyl glycidyl (meth)acrylate, α-propyl glycidyl (meth)acrylate, α-butyl glycidyl (meth)acrylate, 2-methyl glycidyl (meth)acrylate, 2-ethyl ... compounds having an ethylenically unsaturated group and an epoxy group, such as ethyl glycidyl (meth)acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether;Ethylenically unsaturated groups and oxetanyl groups, such as (2-ethyl-2-oxetanyl)methyl (meth)acrylate, (2-methyl-2-oxetanyl)methyl (meth)acrylate, 2-(2-ethyl-2-oxetanyl)ethyl (meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl (meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate, and 3-(2-methyl-2-oxetanyl)propyl (meth)acrylate and a compound having the above formula; a compound having an ethylenically unsaturated group and an isocyanate group, such as 2-(meth)acryloyloxyethyl isocyanate; and a compound having an ethylenically unsaturated group and a hydroxyl group, such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, and 2-hydroxybutyl (meth)acrylate. By appropriately combining these, the desired (meth)acrylic resin can be obtained.

[0031] The (meth)acrylic resin may have at least one functional group selected from a hydroxyl group, a glycidyl group (epoxy group), an amino group, etc., as a reactive site with a functional group-introducing compound or a crosslinking agent described later. Examples of monomers for synthesizing a (meth)acrylic resin having a hydroxyl group include compounds having an ethylenically unsaturated group and a hydroxyl group, such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, and 2-hydroxybutyl (meth)acrylate. These may be used alone or in combination of two or more.

[0032] Examples of monomers for synthesizing a (meth)acrylic resin having a glycidyl group include compounds having an ethylenically unsaturated group and an epoxy group, such as glycidyl (meth)acrylate, α-ethyl glycidyl (meth)acrylate, α-propyl glycidyl (meth)acrylate, α-butyl glycidyl (meth)acrylate, 2-methyl glycidyl (meth)acrylate, 2-ethyl glycidyl (meth)acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether. These may be used alone or in combination of two or more.

[0033] The (meth)acrylic resin synthesized from these monomers contains a chain-polymerizable functional group. The chain-polymerizable functional group is, for example, at least one selected from an acryloyl group and a methacryloyl group. The chain-polymerizable functional group can be introduced into the (meth)acrylic resin by, for example, reacting the (meth)acrylic resin having at least one functional group selected from a hydroxyl group, a glycidyl group (epoxy group), an amino group, etc., synthesized as described above with the following compound (functional group-introducing compound). That is, the content of the functional group in the (meth)acrylic resin can be adjusted by the amount of the functional group-introducing compound introduced. Specific examples of the functional group-introducing compound include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1-(bisacryloyloxymethyl)ethyl isocyanate; an acryloyl monoisocyanate compound obtained by reacting a diisocyanate compound or a polyisocyanate compound with hydroxyethyl (meth)acrylate or 4-hydroxybutylethyl (meth)acrylate; an acryloyl monoisocyanate compound obtained by reacting a diisocyanate compound or a polyisocyanate compound with a polyol compound and hydroxyethyl (meth)acrylate. These may be used alone or in combination of two or more. Among these, the functional group-introducing compound may be 2-methacryloyloxyethyl isocyanate.

[0034] [Photopolymerization initiator] The active energy ray curable adhesive may further contain a photopolymerization initiator. The photopolymerization initiator is not particularly limited as long as it generates an active species capable of chain polymerization by irradiation with active energy rays. The active energy ray may be at least one selected from ultraviolet rays, electron beams, and visible rays, and may be ultraviolet rays. Examples of the photopolymerization initiator include photoradical polymerization initiators. Here, the active species capable of chain polymerization means a species that initiates a polymerization reaction by reacting with a functional group capable of chain polymerization.

[0035] Examples of the photoradical polymerization initiator include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethan-1-one; α-hydroxyketones such as 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, and 1,2-methyl-1-[4-(methylthio)phenyl] α-Aminoketones such as 1-[4-(phenylthio)phenyl]-1,2-octadione-2-(benzoyl)oxime; phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o- 2,4,5-triarylimidazole dimers such as 2-(o-chlorophenyl)-4,5-di(methoxyphenyl)imidazole dimer, 2-(o-fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer, and 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer; benzophenone, N,N,N',N'-tetramethyl-4,4'-diaminobenzophenone, N,N,N',N'-tetraethyl-4,4'-diaminobenzophenone, 4-methoxyphenyl benzophenone compounds such as -4'-dimethylaminobenzophenone; quinone compounds such as 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, 2,3-diphenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone, and 2,3-dimethylanthraquinone;Benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether; benzoin compounds such as benzoin, methylbenzoin, and ethylbenzoin; benzyl compounds such as benzyl dimethyl ketal; acridine compounds such as 9-phenylacridine and 1,7-bis(9,9'-acridinylheptane); N-phenylglycine, coumarin, and the like;

[0036] The content of the photopolymerization initiator in the active energy ray curable adhesive may be 0.1 to 30 parts by mass, 0.3 to 10 parts by mass, or 0.5 to 5 parts by mass, relative to 100 parts by mass of the (meth)acrylic resin. When the content of the photopolymerization initiator is 0.1 parts by mass or more, the adhesive layer is sufficiently cured after irradiation with active energy rays, and pick-up failure tends to be unlikely to occur. When the content of the photopolymerization initiator is 30 parts by mass or less, contamination of the adhesive layer (transfer of the photopolymerization initiator to the adhesive layer) tends to be prevented.

[0037] [Crosslinking agent] The active energy ray curable adhesive may further contain a crosslinking agent. The crosslinking agent is used, for example, for the purpose of controlling the elastic modulus and / or adhesiveness of the adhesive layer. The crosslinking agent may be a compound having two or more functional groups in one molecule that can react with at least one functional group selected from a hydroxyl group, a glycidyl group, an amino group, and the like, possessed by the (meth)acrylic resin. Examples of bonds formed by the reaction between the crosslinking agent and the (meth)acrylic resin include ester bonds, ether bonds, amide bonds, imide bonds, urethane bonds, and urea bonds.

[0038] In the present embodiment, the crosslinking agent may be, for example, a polyfunctional isocyanate having two or more isocyanate groups in one molecule. When such a polyfunctional isocyanate is used, it can easily react with a hydroxyl group, a glycidyl group, an amino group, etc., of the (meth)acrylic resin to form a strong crosslinked structure.

[0039] Examples of polyfunctional isocyanates having two or more isocyanate groups in one molecule include isocyanate compounds such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, and lysine isocyanate.

[0040] The crosslinking agent may be a reaction product (isocyanate group-containing oligomer) of a polyfunctional isocyanate with a polyhydric alcohol having two or more hydroxyl groups in one molecule. Examples of polyhydric alcohols having two or more hydroxyl groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, 1,9-nonanediol, 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerin, trimethylolpropane, pentaerythritol, dipentaerythritol, 1,4-cyclohexanediol, and 1,3-cyclohexanediol.

[0041] Among these, the crosslinking agent may be a reaction product (isocyanate group-containing oligomer) between a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more hydroxyl groups in one molecule. By using such an isocyanate group-containing oligomer as a crosslinking agent, the pressure-sensitive adhesive layer 3 forms a dense crosslinked structure, which tends to sufficiently suppress adhesion of the pressure-sensitive adhesive to the adhesive layer 5 in the pick-up process.

[0042] The content of the crosslinking agent in the active energy ray curable pressure-sensitive adhesive can be appropriately set according to the cohesive strength, breaking elongation, adhesion to the adhesive layer, etc. required for the pressure-sensitive adhesive layer. Specifically, the content of the crosslinking agent may be, for example, 3 to 30 parts by mass, 4 to 15 parts by mass, or 7 to 10 parts by mass relative to 100 parts by mass of the (meth)acrylic resin. By setting the content of the crosslinking agent within the above range, it is possible to achieve a good balance between the properties required for the pressure-sensitive adhesive layer in the dicing process and the properties required for the pressure-sensitive adhesive layer in the die bonding process, and also to achieve excellent pick-up properties.

[0043] If the content of the crosslinking agent is 3 parts by mass or more relative to 100 parts by mass of the (meth)acrylic resin, the formation of the crosslinked structure is unlikely to be insufficient, and the interfacial adhesion with the adhesive layer is sufficiently reduced in the pick-up process, so that defects are unlikely to occur during pick-up. On the other hand, if the content of the crosslinking agent is 30 parts by mass or less relative to 100 parts by mass of the (meth)acrylic resin, the adhesive layer is unlikely to become excessively hard, and the chips are unlikely to peel off in the expanding process.

[0044] The content of the crosslinking agent relative to the total mass of the active energy ray-curable pressure-sensitive adhesive may be, for example, 0.1 to 15 mass%, 3 to 15 mass%, or 5 to 15 mass%. When the content of the crosslinking agent is 0.1 mass% or more, it is easy to form a region (first region 3a) in which the adhesive strength is appropriately reduced by irradiation with active energy rays, while when the content is 15 mass% or less, it tends to be easy to achieve excellent pick-up properties.

[0045] The thickness of the adhesive layer 3 may be appropriately set according to the conditions of the expanding step (temperature, tension, etc.) and may be, for example, 1 to 200 μm, 5 to 50 μm, or 10 to 20 μm. If the thickness of the adhesive layer 3 is 1 μm or more, the adhesiveness is unlikely to be insufficient, and if it is 200 μm or less, the kerf width becomes wide during expansion (stress is not relieved when the pin is pushed up), and pick-up tends to be unlikely to be insufficient.

[0046] The adhesive layer 3 is formed on the base layer 1. A known method can be used to form the adhesive layer 3. For example, a laminate of the base layer 1 and the adhesive layer 3 may be formed by a two-layer extrusion method, or a varnish of an active energy ray-curable adhesive (varnish for forming an adhesive layer) may be prepared and applied to the surface of the base layer 1, or the adhesive layer 3 may be formed on a release-treated film and then transferred to the base layer 1.

[0047] The varnish of the active energy ray curable adhesive (varnish for forming the adhesive layer) may be an organic solvent capable of dissolving the (meth)acrylic resin, the photopolymerization initiator, and the crosslinking agent, and volatilizing by heating. Specific examples of the organic solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, Examples of the organic solvent include polyhydric alcohol alkyl ethers such as propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether; polyhydric alcohol alkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, and diethylene glycol monoethyl ether acetate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These organic solvents may be used alone or in combination of two or more.

[0048] Among these, the organic solvent may be at least one selected from the group consisting of toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, and N,N-dimethylacetamide, from the viewpoint of solubility and boiling point. The solid content concentration of the varnish is usually 10 to 60 mass%.

[0049] (base material layer) The base layer 1 may be a known polymer sheet or film, and is not particularly limited as long as it can be subjected to the expanding process under low temperature conditions. Specific examples of the base layer 1 include polyolefins such as crystalline polypropylene, amorphous polypropylene, high density polyethylene, medium density polyethylene, low density polyethylene, very low density polyethylene, low density linear polyethylene, polybutene, and polymethylpentene, ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester (random, alternating) copolymers, ethylene-butene copolymers, ethylene-hexene copolymers, polyurethane, polyesters such as polyethylene terephthalate and polyethylene naphthalate, polycarbonates, polyimides, polyether ether ketones, polyimides, polyetherimides, polyamides, wholly aromatic polyamides, polyphenylsulfide, aramids (paper), glass, glass cloths, fluororesins, polyvinyl chloride, polyvinylidene chloride, cellulose-based resins, silicone resins, or mixtures of these with plasticizers, or cured products crosslinked by electron beam irradiation.

[0050] The substrate layer 1 may have a surface mainly composed of at least one resin selected from the group consisting of polyethylene, polypropylene, polyethylene-polypropylene random copolymer, and polyethylene-polypropylene block copolymer, and this surface may be in contact with the adhesive layer 3. These resins can be good substrates in terms of properties such as Young's modulus, stress relaxation property, and melting point, as well as cost and waste material recycling after use. The substrate layer 1 may be a single layer, or may have a multilayer structure in which layers made of different materials are laminated as necessary. In order to control the adhesion to the adhesive layer 3, the substrate layer 1 may be subjected to a surface roughening treatment such as a matte treatment or a corona treatment.

[0051] (adhesive layer) A known adhesive composition constituting a die bonding film can be applied to the adhesive layer 5. Specifically, the adhesive composition constituting the adhesive layer 5 may contain a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler. The adhesive layer 5 containing these components tends to have characteristics such as excellent adhesion between chips / substrates and chips / chips, electrode embedding properties, wire embedding properties, etc., ability to bond at low temperatures in the die bonding process, excellent curing in a short time, and excellent reliability after molding with a sealant.

[0052] The reactive group-containing (meth)acrylic copolymer may be, for example, an epoxy group-containing (meth)acrylic copolymer. The epoxy group-containing (meth)acrylic copolymer may be a copolymer obtained by using glycidyl (meth)acrylate as a raw material in an amount of 0.5 to 6% by mass relative to the obtained copolymer. When the content of glycidyl (meth)acrylate is 0.5% by mass or more, high adhesive strength is easily obtained, while when the content is 6% by mass or less, gelation tends to be suppressed. The monomer constituting the remainder of the reactive group-containing (meth)acrylic copolymer may be, for example, an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms, such as methyl (meth)acrylate, styrene, acrylonitrile, etc. Among these, the monomer constituting the remainder of the reactive group-containing (meth)acrylic copolymer may be ethyl (meth)acrylate and / or butyl (meth)acrylate. The mixing ratio can be adjusted in consideration of the Tg of the reactive group-containing (meth)acrylic copolymer. If the Tg is -10°C or higher, the tackiness of the adhesive layer 5 in the B-stage state tends to be suppressed from becoming too large, and the handleability tends to be excellent. The glass transition point (Tg) of the epoxy group-containing (meth)acrylic copolymer may be, for example, 30°C or lower. The polymerization method is not particularly limited, and examples thereof include pearl polymerization and solution polymerization. An example of a commercially available epoxy group-containing (meth)acrylic copolymer is HTR-860P-3 (product name, manufactured by Nagase ChemteX Corporation).

[0053] The weight average molecular weight of the epoxy group-containing (meth)acrylic copolymer may be 100,000 or more, 300,000 to 3,000,000, or 500,000 to 2,000,000, from the viewpoint of adhesiveness and heat resistance. When the weight average molecular weight is 3,000,000 or less, it is possible to suppress a decrease in the filling property between the chip and the substrate supporting it. The weight average molecular weight is a polystyrene-equivalent value obtained by gel permeation chromatography (GPC) using a calibration curve based on standard polystyrene.

[0054] Examples of the curing accelerator include tertiary amines, imidazoles, and quaternary ammonium salts. Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate. These may be used alone or in combination of two or more.

[0055] The filler may be an inorganic filler. Specific examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. These may be used alone or in combination of two or more.

[0056] The adhesive composition may further contain an epoxy resin and an epoxy resin curing agent. Examples of epoxy resins include bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, alicyclic epoxy resins, aliphatic chain epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol A novolac type epoxy resins, diglycidyl etherified products of biphenols, diglycidyl etherified products of naphthalene diols, diglycidyl etherified products of phenols, diglycidyl etherified products of alcohols, and difunctional epoxy resins such as alkyl substituted products, halides, and hydrogenated products thereof, novolac type epoxy resins, etc. In addition, other commonly known epoxy resins such as polyfunctional epoxy resins and heterocyclic epoxy resins may be applied. These may be used alone or in combination of two or more. In addition, components other than the epoxy resin may be included as impurities within a range that does not impair the properties.

[0057] Examples of epoxy resin curing agents include phenolic resins that can be obtained by reacting a phenolic compound with a xylylene compound, which is a divalent linking group, in the absence or presence of an acid catalyst. Examples of phenolic compounds used in the production of phenolic resins include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, on-propylphenol, mn-propylphenol, pn-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, on-butylphenol, mn-butylphenol, pn-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol, octylphenol, nonylphenol, 2,4-xylenol, 2,6 -xylenol, 3,5-xylenol, 2,4,6-trimethylphenol, resorcin, catechol, hydroquinone, 4-methoxyphenol, o-phenylphenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p-chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p-fluorophenol, etc. These phenolic compounds may be used alone or in combination of two or more. As the xylylene compound, which is a divalent linking group used in the production of phenolic resin, the following xylylene dihalides, xylylene diglycols, and derivatives thereof may be used.That is, specific examples of the xylylene compound include α,α'-dichloro-p-xylene, α,α'-dichloro-m-xylene, α,α'-dichloro-o-xylene, α,α'-dibromo-p-xylene, α,α'-dibromo-m-xylene, α,α'-dibromo-o-xylene, α,α'-diiodo-p-xylene, α,α'-diiodo-m-xylene, and α,α'-diiodo- -o-xylene, α,α'-dihydroxy-p-xylene, α,α'-dihydroxy-m-xylene, α,α'-dihydroxy-o-xylene, α,α'-dimethoxy-p-xylene, α,α'-dimethoxy-m-xylene, α,α'-dimethoxy-o-xylene, α,α'-diethoxy-p-xylene, α,α'-diethoxy-m-xylene, α,α'-diethoxy-o-xylene, Xylene, α,α'-di-n-propoxy-p-xylene, α,α'-di-n-propoxy-m-xylene, α,α'-di-n-propoxy-o-xylene, α,α'-diisopropoxy-p-xylene, α,α'-diisopropoxy-m-xylene, α,α'-diisopropoxy-o-xylene, α,α'-di-n-butoxy-p-xylene, α,α'-di-n-butoxy Examples of the tert-butoxyalkylene include α,α'-di-n-butoxy-o-xylene, α,α'-diisobutoxy-p-xylene, α,α'-diisobutoxy-m-xylene, α,α'-diisobutoxy-o-xylene, α,α'-di-tert-butoxy-p-xylene, α,α'-di-tert-butoxy-m-xylene, α,α'-di-tert-butoxy-o-xylene, etc. These may be used alone or in combination of two or more.

[0058] When reacting a phenolic compound with a xylylene compound, a phenolic resin can be obtained by reacting the compound at 50 to 250°C until the raw material xylylene compound is substantially consumed and the reaction composition becomes constant, using an acid catalyst such as mineral acids such as hydrochloric acid, sulfuric acid, phosphoric acid, and polyphosphoric acid; organic carboxylic acids such as dimethyl sulfate, diethyl sulfate, p-toluenesulfonic acid, methanesulfonic acid, and ethanesulfonic acid; super strong acids such as trifluoromethanesulfonic acid; strong acid ion exchange resins such as alkane sulfonic acid type ion exchange resins; super strong acid ion exchange resins such as perfluoroalkane sulfonic acid type ion exchange resins (trade name: Nafion, manufactured by Du Pont, "Nafion" is a registered trademark); natural and synthetic zeolites; and activated clay (acid clay). The reaction time can be appropriately set depending on the raw material and reaction temperature, and can be, for example, about 1 hour to 15 hours, and can be determined by tracking the reaction composition by GPC (gel permeation chromatography) or the like.

[0059] The thickness of the adhesive layer 5 may be, for example, 1 to 300 μm, 5 to 150 μm, or 10 to 100 μm. When the thickness of the adhesive layer 5 is 1 μm or more, the adhesiveness is superior, whereas when the thickness is 300 μm or less, the separation property and pick-up property during expansion tend to be superior.

[0060] <Manufacturing method for integrated dicing and die bonding film> The method for producing the film 10 includes, in this order, a step of producing a laminate including a pressure-sensitive adhesive layer made of an active energy ray-curable pressure-sensitive adhesive whose adhesive strength decreases when irradiated with active energy rays on the surface of the base layer 1 and an adhesive layer 5 formed on the surface of the pressure-sensitive adhesive layer, and a step of irradiating a region of the pressure-sensitive adhesive layer included in the laminate that will become the first region 3a with active energy rays. The amount of irradiation of the active energy rays to the region that will become the first region 3a is, for example, 10 to 1000 mJ / cm. 2 and 100-700mJ / cm 2 , or 100 to 500 mJ / cm 2In this production method, a laminate of the pressure-sensitive adhesive layer and the adhesive layer 5 is first produced, and then a specific region of the pressure-sensitive adhesive layer is irradiated with active energy rays.

[0061] <Semiconductor device and its manufacturing method> 3 is a cross-sectional view showing a semiconductor device according to this embodiment. The semiconductor device 100 shown in this figure includes a substrate 70, four chips S1, S2, S3, and S4 stacked on the surface of the substrate 70, electrodes (not shown) on the surface of the substrate 70, wires W1, W2, W3, and W4 electrically connecting the four chips S1, S2, S3, and S4, and a sealing layer 50 sealing them.

[0062] The substrate 70 is, for example, an organic substrate, or may be a metal substrate such as a lead frame, etc. From the viewpoint of suppressing warpage of the semiconductor device 100, the thickness of the substrate 70 may be, for example, 70 to 140 μm or 80 to 100 μm.

[0063] The four chips S1, S2, S3, and S4 are stacked with the cured product 5C of the adhesive piece 5P interposed therebetween. The shape of the chips S1, S2, S3, and S4 in a plan view is, for example, a square or a rectangle. The area of ​​the chips S1, S2, S3, and S4 is, for example, 200 mm 2 Below, 150mm 2 Below, 100mm 2 Below, 50mm 2 Below, 30mm 2 Below, 20mm 2 Below, 10mm 2 Less than or equal to 9mm 2 It may be 0.1 to 200 mm or less. 2 , 0.1~150mm 2 , 0.1~100mm 2 , 0.1~50mm 2 , 0.1~30mm 2 , 0.1~20mm 2 , 0.1~10mm 2 , or 0.1 to 9 mm 2The length of one side of the chips S1, S2, S3, and S4 may be, for example, 0.1 to 20 mm, 0.1 to 15 mm, 0.1 to 10 mm, 0.1 to 8 mm, 0.1 to 6 mm, 0.1 to 3 mm, 0.1 to 2 mm, or 0.1 to 1 mm. The thickness of the chips S1, S2, S3, and S4 may be, for example, 10 to 170 μm or 25 to 100 μm. The lengths of one side of the four chips S1, S2, S3, and S4 may be the same or different from each other, and the same applies to the thicknesses.

[0064] The manufacturing method of the semiconductor device 100 includes a first step of preparing the above-mentioned film 10, a second step of attaching a wafer W to the adhesive layer 5 of the film 10 and attaching a dicing ring DR to the second surface F2 of the pressure-sensitive adhesive layer 3, a third step of dicing the wafer W together with the adhesive layer 5 and the pressure-sensitive adhesive layer 3 into a plurality of chips S by blade dicing using a blade to form a cut body 20 (dicing step), a fourth step of picking up a DAF8 (a laminate of a chip S1 and an adhesive piece 5P, see Figure 4 (d)) from the first region 3a of the adhesive layer 3 of the cut body 20, and a fifth step of mounting the chip S1 on a substrate 70 via the adhesive piece 5P.

[0065] An example of a method for producing the DAF8 will be described with reference to Figures 4(a), 4(b), 4(c), 4(d), and 5(a). First, the above-mentioned film 10 is prepared. As shown in Figures 4(a) and 4(b), the film 10 is attached to one surface of the wafer W so that the adhesive layer 5 is in contact with the surface. In addition, a dicing ring DR is attached to the second surface F2 of the adhesive layer 3.

[0066] Next, the wafer W, adhesive layer 5, and pressure-sensitive adhesive layer 3 are diced by blade dicing using a blade. As a result, as shown in Fig. 4(c) and Fig. 5(a), the wafer W is singulated together with the adhesive layer 5 and the pressure-sensitive adhesive layer 3 to become chips S. The adhesive layer 5 is also singulated to become adhesive pieces 5P. In this manner, cut bodies 20 are formed. Note that the wafer W may be thinned by grinding it prior to dicing.

[0067] The blade dicing forms a kerf in the adhesive layer 3 of the cut body 20. The kerf width formed in the adhesive layer 3 of the cut body 20 by the blade dicing is 75% or more, and may be 78% or more or 80% or more of the blade width. By providing such a kerf width, double die can be suppressed, and as a result, production efficiency can be improved. The adhesive layer 3 may shrink by dicing, that is, it may exceed 100%. The kerf width formed in the adhesive layer 3 of the cut body 20 by the blade dicing may be 160% or less or 150% or less of the blade width. The kerf formed by dicing occurs when stress due to cure shrinkage caused by cure by active energy ray irradiation when forming the first region 3a of the adhesive layer 3 is released by dicing, and the present inventors believe that if the cure shrinkage amount of the (meth)acrylic resin or the like in the adhesive layer 3 is large, the width (kerf width) becomes easy to expand. The above-mentioned dicing-die bonding integrated film has a sufficient amount of cure shrinkage, and by using this, it is possible to form a kerf width that satisfies the above requirements. Note that the kerf width can be determined by measuring the distance between the adhesive layers between adjacent chips at multiple points (at least three points) using an optical microscope, and applying the average value of these measurements.

[0068] In the preparation of a dicing film (adhesive layer), when a pressure treatment such as pressing the adhesive layer in one direction with a rubber roll or the like is performed, the kerf width formed may differ depending on the direction of blade dicing. This point will be explained below with reference to FIG. 5(b). When a pressure treatment such as pressing the adhesive layer in one direction with a rubber roll or the like is performed, the one direction is defined as direction A, the same direction as direction A is defined as direction Ch1, and the direction perpendicular to Ch1 is defined as direction Ch2, the kerf width WCh1 between adjacent chips in direction Ch1 (kerf width formed by dicing in direction Ch2) may differ from the kerf width WCh2 between adjacent chips in direction Ch2 (kerf width formed by dicing in direction Ch1). Usually, the kerf width WCh1 tends to have a larger fluctuation than the kerf width WCh2. In terms of the relationship between the kerf width WCh1 and the kerf width WCh2 and the above-mentioned kerf width conditions, it is sufficient that either the kerf width WCh1 or the kerf width WCh2 satisfies the above-mentioned kerf width conditions. However, from the viewpoint of more reliably suppressing double die, it is preferable that both the kerf width WCh1 and the kerf width WCh2 satisfy the above-mentioned kerf width conditions.

[0069] The kerf width formed in the pressure-sensitive adhesive layer 3 of the cut body 20 by blade dicing may be, for example, 10 μm or more, 13 μm or more, 15 μm or more, or 17 μm or more. When the kerf width is 10 μm or more, double die tends to be suppressed, and when it is 13 μm or more, double die tends to be suppressed more reliably. The upper limit of the kerf width is not particularly limited, but can be, for example, 50 μm or less.

[0070] The blade width may be 10 to 50 μm, 10 to 30 μm, or 10 to 25 μm. Even when such a relatively narrow blade is used, double die can be suppressed more sufficiently. The blade width may be, for example, an actual measurement value obtained by using an optical microscope from a cut in a silicon wafer. The actual measurement value may be measured, for example, by the method described in the Examples.

[0071] After dicing, without irradiating the adhesive layer 3 with active energy rays, as shown in Figure 4 (d), the base layer 1 is expanded under room temperature or cooled conditions to separate the chips S from each other, and the adhesive piece 5P is peeled off from the adhesive layer 3 by pushing it up with a pin 42, and the DAF8 is picked up by suction with a suction collet 44.

[0072] A method for manufacturing the semiconductor device 100 will be specifically described with reference to Fig. 6, Fig. 7, and Fig. 8. First, as shown in Fig. 6, the first-stage chip S1 (chip S) is pressure-bonded to a predetermined position on the substrate 70 via the adhesive piece 5P. Next, the adhesive piece 5P is cured by heating. This causes the adhesive piece 5P to cure and become a cured material 5C. The curing process of the adhesive piece 5P may be performed under a pressurized atmosphere from the viewpoint of reducing voids.

[0073] In the same manner as the mounting of the chip S1 on the substrate 70, the second-stage chip S2 is mounted on the surface of the chip S1. Furthermore, the third-stage and fourth-stage chips S3 and S4 are mounted to produce the structure 60 shown in Fig. 7. After the chips S1, S2, S3, and S4 are electrically connected to the substrate 70 by wires W1, W2, W3, and W4 (see Fig. 8), the semiconductor elements and wires are sealed by the sealing layer 50 to complete the semiconductor device 100 shown in Fig. 3.

[0074] Although the embodiments of the present disclosure have been described in detail above, the present invention is not limited to the above-mentioned embodiments. For example, in the above-mentioned embodiments, the film 10 including the base layer 1, the pressure-sensitive adhesive layer 3, and the adhesive layer 5 in this order is exemplified, but the film 10 may be in an embodiment not including the adhesive layer 5. In addition, the film 10 may further include a cover film (not shown) that covers the adhesive layer 5. EXAMPLES

[0075] The present disclosure will be described in more detail below with reference to examples, but the present invention is not limited to these examples. Unless otherwise specified, reagents were used as chemicals.

[0076] <Production Example 1> [Synthesis of acrylic resin (A-1)] The following components were placed in a 2000 mL flask equipped with a three-one motor, a stirring blade, and a nitrogen inlet tube. Ethyl acetate (solvent): 635 parts by weight 2-Ethylhexyl acrylate: 395 parts by weight 2-Hydroxyethyl acrylate: 100 parts by weight Methacrylic acid: 5 parts by weight Azobisisobutyronitrile: 0.08 parts by weight

[0077] After stirring the contents until they were sufficiently homogenized, bubbling was performed for 60 minutes at a flow rate of 500 mL / min to remove dissolved oxygen from the system. The temperature was raised to 78°C over 1 hour, and polymerization was allowed to continue for 6 hours after the temperature was raised. Next, the reaction solution was transferred to a 2000 mL pressure cooker equipped with a three-one motor, agitator, and a nitrogen inlet tube, and heated at 120°C and 0.28 MPa for 4.5 hours, and then cooled to room temperature (25°C, the same below).

[0078] Next, 490 parts by mass of ethyl acetate was added and stirred to dilute the contents. 0.10 parts by mass of dioctyltin dilaurate was added as a urethane catalyst, and then 48.6 parts by mass of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko K.K., Karenz MOI (trade name)) was added, reacted at 70°C for 6 hours, and then cooled to room temperature. Next, ethyl acetate was further added to adjust the non-volatile content in the acrylic resin solution to 35% by mass, and a solution containing the acrylic resin (A-1) having a chain-polymerizable functional group of Production Example 1 was obtained.

[0079] The solution containing the acrylic resin (A-1) obtained as described above was vacuum dried overnight at 60° C. The solid content thus obtained was subjected to elemental analysis using a fully automatic elemental analyzer (manufactured by Elemental, product name: varioEL), and the content of the functional group derived from the introduced 2-methacryloxyethyl isocyanate was calculated from the nitrogen content to be 0.50 mmol / g.

[0080] The polystyrene-equivalent weight average molecular weight of the acrylic resin (A-1) was determined using the following equipment. That is, GPC measurement was performed using SD-8022 / DP-8020 / RI-8020 manufactured by Tosoh Corporation, Gelpack GL-A150-S / GL-A160-S manufactured by Hitachi Chemical Co., Ltd. as a column, and tetrahydrofuran as an eluent. As a result, the polystyrene-equivalent weight average molecular weight was 800,000. The hydroxyl value and acid value measured according to the method described in JIS K0070 were 56.1 mgKOH / g and 6.5 mgKOH / g. These results are summarized in Table 1.

[0081] <Production Example 2> [Synthesis of acrylic resin (A-2)] A solution containing an acrylic resin (A-2) of Production Example 2 was obtained in the same manner as in Production Example 1, except that the raw material monomer composition shown in Production Example 1 in Table 1 was changed to the raw material monomer composition shown in Production Example 2 in Table 1. The measurement results of the properties of the acrylic resin (A-2) of Production Example 2 are shown in Table 1.

[0082] <Production Example 3> [Synthesis of acrylic resin (A-3)] A solution containing an acrylic resin (A-3) of Production Example 3 was obtained in the same manner as in Production Example 1, except that the raw material monomer composition shown in Production Example 1 in Table 1 was changed to the raw material monomer composition shown in Production Example 3 in Table 1. The measurement results of the properties of the acrylic resin (A-3) of Production Example 3 are shown in Table 1.

[0083] <Production Example 4> [Synthesis of acrylic resin (A-4)] A solution containing the acrylic resin (A-4) of Production Example 2 was obtained in the same manner as in Production Example 1, except that the raw material monomer composition shown in Production Example 1 in Table 1 was changed to the raw material monomer composition shown in Production Example 4 in Table 1. The measurement results of the properties of the acrylic resin (A-4) of Production Example 4 are shown in Table 1.

[0084] <Production Example 5> [Synthesis of acrylic resin (A-5)] A solution containing an acrylic resin (A-5) of Production Example 5 was obtained in the same manner as in Production Example 1, except that the raw material monomer composition shown in Production Example 1 in Table 1 was changed to the raw material monomer composition shown in Production Example 5 in Table 1. The measurement results of the properties of the acrylic resin (A-5) of Production Example 5 are shown in Table 1.

[0085] [Table 1]

[0086] <Example 1> [Preparation of dicing film (adhesive layer)] An active energy ray-curable adhesive varnish (varnish for forming an adhesive layer) was prepared by mixing the following components (see Table 2). The amount of ethyl acetate (solvent) was adjusted so that the total solid content of the varnish was 25 mass%. Solution containing the acrylic resin (A-1) of Production Example 1: 100 parts by mass (solid content) Photopolymerization initiator (B-1) (1-hydroxycyclohexyl-phenyl-ketone (manufactured by Ciba Specialty Chemicals Corporation, Irgacure 184, "Irgacure" is a registered trademark): 1.0 part by mass Crosslinking agent (C-1) (polyfunctional isocyanate (reaction product of tolylene diisocyanate and trimethylolpropane), manufactured by Nippon Polyurethane Industry Co., Ltd., Coronate L, solid content: 75%): 8.0 parts by mass (solid content) Ethyl acetate (solvent)

[0087] A polyethylene terephthalate film (width 450 mm, length 500 mm, thickness 38 μm) with a release treatment applied to one side was prepared. An active energy ray curable adhesive varnish was applied to the release treated side using an applicator, and then dried at 80° C. for 5 minutes. This resulted in a laminate (dicing film) consisting of a polyethylene terephthalate film and a 30 μm thick adhesive layer formed thereon.

[0088] A polyolefin film (width 450 mm, length 500 mm, thickness 80 μm) was prepared with a corona treatment on one side. The corona treatment surface was attached to the adhesive layer of the laminate at room temperature. Next, the adhesive layer was transferred to the polyolefin film (cover film) by pressing the rubber roll in one direction. After that, the film was left at room temperature for 3 days to obtain a dicing film with a cover film.

[0089] [Preparation of die bonding film (adhesive layer)] A varnish for forming an adhesive layer was prepared by mixing the following components. First, cyclohexanone (solvent) was added to the mixture containing the following components and stirred and mixed, and then the mixture was further kneaded for 90 minutes using a bead mill. Epoxy resin (YDCN-700-10 (product name), manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent: 210, molecular weight: 1200, softening point: 80°C): 14 parts by mass Phenolic resin (Mirex XLC-LL (product name), manufactured by Mitsui Chemicals, Inc., phenolic resin, hydroxyl equivalent: 175, water absorption rate: 1.8%, heat weight loss rate at 350°C: 4%): 23 parts by mass Silane coupling agent (NUC A-189 (product name) manufactured by NUC Corporation, γ-mercaptopropyltrimethoxysilane): 0.2 parts by mass Silane coupling agent (NUCA-1160 (product name), manufactured by Nippon Unicar Co., Ltd., γ-ureidopropyltriethoxysilane): 0.1 parts by mass Filler (SC2050-HLG (product name), manufactured by Admatechs Co., Ltd., silica, average particle size 0.500 μm): 32 parts by mass

[0090] The following components were further added to the mixture obtained as described above, and the mixture was subjected to stirring and mixing and vacuum deaeration to obtain a varnish for forming an adhesive layer (a varnish of an adhesive composition containing at least a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler). Epoxy group-containing acrylic copolymer (HTR-860P-3 (product name), manufactured by Nagase ChemteX Corporation, weight average molecular weight 800,000): 16 parts by mass Curing accelerator (Curesol 2PZ-CN (trade name), manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole, "Curesol" is a registered trademark) 0.1 parts by mass

[0091] A polyethylene terephthalate film (thickness 35 μm) with a release treatment on one side was prepared. A varnish for forming an adhesive layer was applied to the release-treated side using an applicator, and then heated and dried at 140°C for 5 minutes. This resulted in a laminate (die bonding film) consisting of a polyethylene terephthalate film (carrier film) and a 25 μm-thick adhesive layer (B-stage state) formed thereon.

[0092] [Preparation of integrated dicing and die bonding film] A die bonding film consisting of an adhesive layer and a carrier film was cut into a circle with a diameter of 335 mm together with the carrier film. A dicing film from which the polyethylene terephthalate film had been peeled off was attached to the cut die bonding film at room temperature, and then the film was left at room temperature for one day. The dicing film was then cut into a circle with a diameter of 370 mm to obtain a laminate. The region of the adhesive layer of the laminate thus obtained, which corresponds to the position where the wafer was attached (the first region of the pressure-sensitive adhesive layer), was irradiated with ultraviolet light as follows. That is, a pulsed xenon lamp was used to irradiate the laminate with 70 W, 300 mJ / cm. 2 The film was partially irradiated with ultraviolet light at an irradiation dose of 1000 nm. The ultraviolet light was irradiated at a portion of the film having an inner diameter of 318 mm from the center using a blackout curtain. In this manner, a dicing-die bonding integrated film of Example 1 was obtained for use in various evaluation tests described later.

[0093] [Evaluation test] (Kerf width measurement) The integrated dicing and die bonding film of Example 1 was bonded to a wafer (silicon, diameter 12 inches, thickness 50 μm) by heating at 80° C. for 10 seconds. Then, in order to obtain multiple square chips of a predetermined size under the dicing conditions below, incisions were made at predetermined intervals in the same direction as the direction in which the rubber roll was moved when the adhesive layer was transferred to the polyolefin film (cover film) in the above-mentioned "Preparation of dicing film (adhesive layer)", and further incisions were made at predetermined intervals in the direction perpendicular to the direction in which the rubber roll was moved, thereby singulating into multiple chips with adhesive pieces. Dicer: DISCO, DFD-6361 Blade: DISCO, ZH05-SD4000-N1-70-BB Blade rotation speed: 40000 rpm Dicing speed: 30mm / s Depth of cut from the surface of the adhesive layer to the base layer: 20μm Cut mode: Down cut Chip size: 10mm x 10mm

[0094] In the individualized wafer, the direction in which the rubber roll was operated when the adhesive layer was transferred to the polyolefin film (cover film) in the above-mentioned "Preparation of dicing film (adhesive layer)" was defined as direction Ch1, and the direction perpendicular to Ch1 was defined as direction Ch2. Using an optical microscope, the kerf width WCh1 between adjacent chips in direction Ch1 and the kerf width WCh2 between adjacent chips in direction Ch2 were measured. Three measurement points were measured, and the average of these was calculated as the kerf width. The results are shown in Table 2.

[0095] (Blade width measurement) The dicing-die bonding integrated film of Example 1 was bonded to a 400 μm thick wafer by heating at 80° C. for 10 seconds. Then, the incision depth from the surface of the wafer to the adhesive layer was set to 100 μm, and a single incision was made under the same dicing conditions as those for the measurement of the kerf width described above. The wafer was then cut perpendicular to the incision, and the cut surface was observed. The width at a position 20 μm high from the bottom of the dicing was measured as the blade width. The blade width was 20.8 μm. In the evaluation test, this value was used as the blade width to calculate the ratio of the kerf width to the blade width.

[0096] (Calculation of the ratio of kerf width to blade width) The ratio of the kerf width to the blade width was calculated from the obtained kerf width and blade width. The results are shown in Table 2.

[0097] <Examples 2 to 11 and Comparative Examples 1 and 2> The composition of the adhesive layer and the amount of ultraviolet irradiation shown in Example 1 in Table 2 were changed to the composition of the adhesive layer and the amount of ultraviolet irradiation shown in each Example and each Comparative Example in Tables 2, 3, and 4, and the dicing conditions shown in Example 1 in Table 2 were changed to the dicing conditions shown in each Example and each Comparative Example in Tables 2, 3, and 4. Except for this, the evaluation test was performed in the same manner as in Example 1. The photopolymerization initiator (B-2) was 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]-phenyl}-2-methyl-propan-1-one (manufactured by Ciba Specialty Chemicals Co., Ltd., Irgacure 127, "Irgacure" is a registered trademark). The results are shown in Tables 2, 3, and 4.

[0098] [Table 2]

[0099] [Table 3]

[0100] [Table 4]

[0101] As shown in Tables 2, 3, and 4, when the dicing-die bonding integrated films of Examples 1 to 11, which have an adhesive layer made of an active energy ray-curable adhesive and in which the content of functional groups in the (meth)acrylic resin is 0.4 mmol / g or more, were used, the kerf width was 75% or more of the blade width, whereas when the dicing-die bonding integrated films of Comparative Examples 1 and 2, which do not satisfy these requirements, were used, the kerf width was less than 75% of the blade width. These results confirmed that the dicing-die bonding integrated film of the present disclosure can ensure a sufficient kerf width even when a narrow blade is used. [Explanation of symbols]

[0102] 1...base material layer, 3...adhesive layer, 3a...first region, 3b...second region, 5...adhesive layer, 5P...adhesive piece, 5C...cured product, 8...DAF, 10...dicing / die bonding integrated film (film), 20...cut body, 42...pin, 44...suction collet, 50...sealing layer, 60...structure, 70...substrate, 100...semiconductor device, DR...dicing ring, F1...first surface, F2...second surface, Rw...area, S1, S2, S3, S4, S...chip, W...wafer, W1, W2, W3, W4...wire, WCh1, WCh2...kerf width.

Claims

1. A first step of preparing a dicing / die bonding integrated film including a base layer, a pressure-sensitive adhesive layer made of an active energy ray curable pressure-sensitive adhesive having a first surface facing the base layer and a second surface opposite to the first surface, and an adhesive layer provided so as to cover a central portion of the second surface of the pressure-sensitive adhesive layer; a second step of attaching a wafer to the adhesive layer of the dicing and die bonding integrated film and attaching a dicing ring to the second surface of the adhesive layer; a third step of dicing the wafer together with the adhesive layer and the pressure-sensitive adhesive layer into a plurality of chips by blade dicing using a blade to form cut bodies; A fourth step of picking up the chip from the adhesive layer of the cut body together with an adhesive piece obtained by dividing the adhesive layer; a fifth step of mounting the chip onto a substrate or another chip via the adhesive strip; Equipped with the pressure-sensitive adhesive layer has a first region corresponding to a region of the adhesive layer to which the wafer is attached, and a second region to which the dicing ring is attached; the first region is a region in a state in which the adhesive strength has been reduced as compared to the second region due to irradiation with active energy rays, In the third step, a width of a kerf formed in the adhesive layer of the cut body by the blade dicing is 75% or more of a width of the blade; the active energy ray-curable pressure-sensitive adhesive contains a (meth)acrylic resin having a chain-polymerizable functional group, the functional group is at least one selected from an acryloyl group and a methacryloyl group, The content of the functional group in the (meth)acrylic resin is 0.4 mmol / g or more. A method for manufacturing a semiconductor device.

2. The blade has a width of 10 to 50 μm. The method for manufacturing a semiconductor device according to claim 1 .

3. The chips have a square or rectangular shape and an area of ​​200 mm ２ Below is the The method for manufacturing a semiconductor device according to claim 1 or 2.

4. The active energy ray-curable pressure-sensitive adhesive further comprises a crosslinking agent, The content of the crosslinking agent relative to the total mass of the active energy ray-curable pressure-sensitive adhesive is 0.1 to 15 mass %. The method for manufacturing a semiconductor device according to any one of claims 1 to 3.

5. The crosslinking agent is a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more hydroxyl groups in one molecule. The method for manufacturing a semiconductor device according to claim 4 .

6. The adhesive layer is made of an adhesive composition containing a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler. The method for manufacturing a semiconductor device according to any one of claims 1 to 5.

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