Electronic device

Abstract

To provide an electronic apparatus with which various modes of display are possible, and with which various modes of operation are possible.SOLUTION: Provided is an electronic apparatus comprising a display device and a first to a third surface, the first surface having a region provided adjoining the second surface, the second surface having a region provided adjoining the third surface, the first surface having a region provided facing the third surface. The display device has a first to a third display region, the first display region having a region provided so as to overlap the first surface, the second display region having a region provided so as to overlap the second surface, the third display region having a region provided so as to overlap the third surface, the first display region having a larger area than the third display region.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One aspect of the present invention relates to a display device capable of displaying on a curved surface. The present invention relates to a display device capable of displaying on a plurality of different surfaces, or a display device capable of displaying on a curved surface. The present invention relates to an electronic device, a light-emitting device, a lighting device, or a manufacturing method thereof. Electronic device, light-emitting device, lighting device, or the like, equipped with a display device capable of displaying on a number of different surfaces The present invention relates to a method for producing these.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one aspect relates to an article, a method, or a manufacturing method. One aspect of the present invention is a process, machine, manufacture, or composition. Therefore, the present invention more specifically disclosed herein The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a liquid crystal display device, a power storage device, Examples of the present invention include a device, a storage device, a driving method thereof, or a manufacturing method thereof. can be done. [Background technology]

[0003] In recent years, display devices are expected to be used for a variety of purposes, and diversification is required. For example, mobile information terminals such as smartphones and tablet terminals equipped with touch panels are thin and These devices are becoming more compact, more powerful, and more multifunctional.

[0004] In addition, Patent Document 1 discloses a method for manufacturing a display device having an organic EL element and a switching element on a film substrate. A flexible active matrix light emitting device having a transistor is disclosed. do. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2003-174153 A Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a novel electronic device. An object of one embodiment of the present invention is to provide an electronic device capable of displaying a variety of images. An object of one embodiment of the present invention is to provide an electronic device capable of performing various operations. One aspect of the present invention provides a display device (display panel) that can be applied to such electronic devices. Another object of the present invention is to provide a novel display device or the like. This is one of the challenges.

[0007] Another object of one embodiment of the present invention is to provide an electronic device or the like that can capture an appropriate image. Another embodiment of the present invention provides an electronic device capable of irradiating a subject with light. Another object of the present invention is to provide an electronic device that can easily replace a battery. Another object of the present invention is to provide an electronic device that is easy to operate. Another object of the present invention is to provide a device for capturing an image of a subject. It is an object of the present invention to provide an electronic device or the like that can check the situation. One of the objectives of the present invention is to provide an electronic device or the like that can easily perform wireless communication. One aspect of the present invention is to provide an electronic device that can produce good sound. Another embodiment of the present invention provides an electronic device or the like that can be bent or unfolded. One of our goals is to provide

[0008] The description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. Problems other than those mentioned above are not necessarily solved. It will become clear from the description of the specification, etc., and problems other than those mentioned above will not be identified from the description of the specification, etc. It is possible to extract [Means for solving the problem]

[0009] In view of the above, one embodiment of the present invention is an electronic device having a display device and first to third surfaces. The first surface has a region in contact with the second surface, and the second surface has a first The first surface has a region that is in contact with the third surface, and the first surface faces the third surface. The display device has first to third display areas, and the first The display area has an area provided so as to overlap with the first surface, and the second display area has a first The second display area is provided so as to overlap with the third surface, and the third display area is provided so as to overlap with the third surface. The first display area has a larger surface area than the third display area. The electronic device is characterized by having a multiplication factor.

[0010] Another embodiment of the present invention is a display device having a display device, an input device, and first to third surfaces. A slave device, the first surface of which has a region in contact with the second surface of the slave device, The second surface has an area in contact with the third surface, and the first surface is in contact with the third surface. and a display device having a first display area, a second display area, and a third display area. The first display area has an area provided so as to overlap with the first surface, and the second surface The display area has an area provided so as to overlap with the second surface, and the third display area has a third the input device has an area provided so as to overlap with the first display area a region provided so as to overlap the first display region, a region provided so as to overlap the second display region, and a region provided so as to overlap the third display region. and a display area of ​​the first display area that is arranged to overlap with the display area of ​​the third display area. The electronic device is characterized by having an area larger than the display area.

[0011] Another embodiment of the present invention is an electronic device having a display device and first to third surfaces. The first surface has a region in contact with the second surface, and the second surface has a first The first surface has a region that is in contact with the third surface, and the first surface faces the third surface. The display device has first to third display areas, and the first The display area has an area provided so as to overlap with the first surface, and the second display area has a first The second display area is provided so as to overlap with the third surface, and the third display area is provided so as to overlap with the third surface. The display device has a first display area, a second display area, and a third display area. The first display area has a function as a touch sensor, and the first display area has a larger area than the third display area. The electronic device is characterized by having the following.

[0012] Another embodiment of the present invention is a display device including a display device, an imaging element, and first to third surfaces. A slave device, the first surface of which has a region in contact with the second surface of the slave device, The second surface has an area in contact with the third surface, and the first surface is in contact with the third surface. and a display device having a first display area, a second display area, and a third display area. The first display area has an area provided so as to overlap with the first surface, and the second surface The display area has an area provided so as to overlap with the second surface, and the third display area has a third The display device has a first display area, the first display area being provided so as to overlap with the first surface. The display device has a function of displaying a first image obtained by the imaging element, In the second display area, a second image obtained by the imaging element can be displayed. It is an electronic device characterized by having the following functions.

[0013] Another embodiment of the present invention is an electronic device having the above structure, in which the second surface is a side surface. The electronic device is characterized by the above.

[0014] Another embodiment of the present invention is a display device including a display device, an imaging element, and first to third surfaces. A method for driving a child device, the method comprising: The second surface has a region in contact with the third surface, and the first surface The display device has a region provided so as to face the first surface and the third surface, The display device has a display area, and the first display area has an area provided so as to overlap with the first surface. The second display area has an area provided so as to overlap with the second surface, and the third display area The first display area has an area provided so as to overlap with the third surface, and the first display area is A first image obtained by the image sensor is displayed, and a second image is displayed in a second display area. and displaying a second image obtained by the above-mentioned method.

[0015] Another embodiment of the present invention is a method for driving an electronic device having the above structure, The present invention relates to a method for driving an electronic device.

[0016] In this specification, a connector, such as an FPC (F lexible printed circuit) or TCP (Tape Car The module has a printed wiring board (PCB) attached to the TCP. or a COG (Chip On Glass) on a substrate on which a display element is formed. The module on which IC (integrated circuit) is directly mounted using the "Glass" method is included in the display device. It may be possible to get pregnant. Effect of the Invention

[0017] According to one embodiment of the present invention, a novel electronic device can be provided. According to one aspect of the present invention, an electronic device capable of displaying various images can be provided. According to one aspect of the present invention, an electronic device capable of performing various operations can be provided. According to one aspect of the present invention, a display device (display panel) applicable to such electronic devices is provided. According to one embodiment of the present invention, a novel display device or the like can be provided. can.

[0018] According to another aspect of the present invention, there is provided an electronic device capable of capturing an appropriate image. According to another aspect of the present invention, an electronic device capable of irradiating a subject with light can be provided. According to one aspect of the present invention, an electronic device with an easily replaceable battery can be provided. According to one aspect of the present invention, an easy-to-operate electronic device can be provided. According to another aspect of the present invention, a device for capturing an image of a subject in a photographing state can be provided. According to another aspect of the present invention, there is provided an electronic device that can check the status of the device. In addition, it is possible to provide an electronic device or the like that can easily perform wireless communication. According to the present invention, it is possible to provide an electronic device that can produce good sound. According to one aspect of the present invention, it is possible to provide an electronic device that can be bent or unfolded. Cut.

[0019] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. The above will become apparent from the description in the specification, drawings, claims, etc. It is possible to extract other effects from the descriptions in the claims, etc. [Brief description of the drawings]

[0020] [Figure 1] 1 shows a configuration example of an electronic device according to an embodiment. [Diagram 2] 1 shows a configuration example of an electronic device according to an embodiment. [Diagram 3] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 4] 1 shows a configuration example of an electronic device according to an embodiment. [Diagram 5] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 6] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 7] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 8] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 9] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 10]1 shows a configuration example of an electronic device according to an embodiment. [Figure 11] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 12] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 13] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 14] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 15] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 16] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 17] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 18] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 19] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 20] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 21] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 22] 1 shows a configuration example of an electronic device according to an embodiment. [Diagram 23] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 24] 1 shows a configuration example of an electronic device according to an embodiment. [Diagram 25] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 26] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 27] 1 shows a configuration example of an electronic device according to an embodiment. [Figure 28] 3 shows a configuration example of a light-emitting panel according to an embodiment. [Figure 29] 3 shows a configuration example of a light-emitting panel according to the embodiment. [Diagram 30] 3 shows a configuration example of a light-emitting panel according to the embodiment. [Diagram 31] Cross-sectional TEM image and local Fourier transform image of an oxide semiconductor. [Diagram 32]1A and 1B are diagrams showing a nanobeam electron diffraction pattern of an oxide semiconductor film and an example of a transmission electron diffraction measurement apparatus. [Diagram 33] An example of structural analysis using transmission electron diffraction measurements, and a planar TEM image. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] Hereinafter, an embodiment will be described with reference to the drawings. However, the embodiment may be different from the embodiment. The present invention can be implemented in any manner without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that various modifications may be made to the embodiments and details. In addition, in the configuration described below, Reference numerals indicating similar objects are used in different drawings, and the same parts or similar functions are shown. In addition, when referring to a similar function, the term "hatch pattern" is used. In some cases, the same code is used and no particular symbol is given.

[0022] In addition, the contents (or even a part of the contents) described in one embodiment may be used in the embodiment. Another content (or a part of the content) described in the embodiment, and / or one or more other embodiments The application, combination, or replacement of the contents (or part of the contents) described in the form It is possible to do the following:

[0023] The contents described in the embodiments are explained in detail with reference to various figures in each embodiment. This refers to the content that is stated or stated using the text in the specification.

[0024] In addition, a figure (or a part thereof) described in one embodiment may be different from another part of the figure, Another figure (or a part thereof) described in the embodiment, and / or one or more By combining with the figure (or a part of it) described in another embodiment of the present invention , and many more diagrams can be constructed.

[0025] In each figure described in this specification, the size, layer thickness, or area of ​​each component is indicated by the following formula: The figures may be exaggerated for clarity and are not necessarily limited to scale. stomach.

[0026] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are added for the purpose of convenience and are not intended to be limiting.

[0027] (Embodiment 1) In this embodiment, an electronic device according to one embodiment of the present invention and a display device applicable to the electronic device will be described. (sometimes called a display panel) will be described with reference to the drawings.

[0028] [Examples of electronic devices] FIG. 1(A1) is a schematic perspective view showing the front side of an electronic device exemplified below. A2) is a perspective schematic diagram showing the back side.

[0029] The electronic device shown in FIG. 1(A1) and FIG. 1(A2) includes a housing 101 and a surface ( For example, a display panel that is provided so that information can be displayed on the front, back, side, etc. The display panel 110 is covered with a cover to protect it from scratches and damage. In some cases, a material such as a resin or the like is provided.

[0030] The housing 101 has a front surface, a back surface, a first side surface, and a second surface having an area in contact with the first side surface. a third side having an area facing the first side; and a third side having an area facing the second side. The housing 101 has a surface shape having a first side surface and a fourth side surface. The first side surface has an area in contact with the front surface and / or the back surface. 01 has a second side surface. The second side surface is a surface adjacent to the front surface and / or the back surface. Alternatively, the housing 101 has a third side surface. The third side surface includes a front surface and and / or a back surface. Alternatively, the housing 101 has a fourth side surface. The fourth side has an area in contact with the front surface and / or the back surface.

[0031] The front surface has an area facing the back surface.

[0032] In other words, the housing 101 has multiple surfaces. For example, the housing 101 has a front surface and a back surface. Each surface has a gradual change in slope and at least four side surfaces. In some cases, it may be difficult to determine the boundaries of each side. Although the term is used herein, the side surface may include a portion of the front surface or back surface.

[0033] For example, the side view is when viewed from the side (for example, from a direction where the back and front surfaces are not visible). However, if the front, back, or side surface is curved, In some cases, it may be difficult to determine the boundary. In that case, for example, a certain area may be the front side (back side) ) and also part of an aspect. A given area may be said to be part of one aspect and also part of another. .

[0034] For example, the side surface has an area in contact with the front surface. For example, a side surface has an area where it abuts another side surface.

[0035] Here, the front surface and / or the back surface may, for example, have a flat area. Or, The front and / or back surface may, for example, have curved regions. The side surface may, for example, have curved regions. For example, the side surface may have curved regions, or the side surface may have flat regions, for example. In addition, it may be difficult to distinguish between the front and back sides. The back side may be called the back surface, and the back side may be called the front surface. The side surface may have a larger display area than the back surface. , the area is smaller than that of the front surface or the back surface.

[0036] In addition to the above mentioned surfaces, other surfaces may be provided. It may have more faces than a faceplate, or it may have fewer faces than the above. In some cases, only one such device may be available.

[0037] The display panel 110 is provided so as to have an area overlapping with the front surface of the housing 101. Alternatively, the display panel 110 may overlap one of the sides of the housing 101. The display panel 1 has a display area 113 that is provided to have an area. A display 10 is provided so as to have an area overlapping with a part of the back surface of the housing 101. The side surface on which the display area 113 is provided is, for example, In the case of the display area 113, the length of one side is shorter than that of the side on which the display area 113 is not provided. The side surface on which the area 113 is provided is, for example, a side surface on which the display area 113 is not provided. In other words, the side surface on which the display area 113 is provided is smaller than the side surface. Examples are a plane parallel to the minor axis and a plane perpendicular to the major axis.

[0038] The boundaries of the display area 111, the display area 113, and the display area 116 are the same. For example, the drawings may show dotted lines. Depending on the circumstances, the boundaries may differ from the dotted lines depicted in the drawings.

[0039] The housing 101 has four sides that overlap with at least the display panel 110. The region preferably has a curved shape. For example, the front surface and the side surface, and the side surface and the back surface It is preferable that there are no corners between the surfaces and that these surfaces are continuous. However, for example, when the housing 101 has a curved surface with a continuous tangent slope from the front surface to the back surface, It is preferable that the shape of the side surface is obtained by deforming the plane without expanding or contracting. It is preferable that the display panel has a developable surface. In other words, the display panel 110 can be curved smoothly. Therefore, the radius of curvature when the display panel 110 is bent can be increased. The burden caused by bending can be reduced, and the life of the display panel 110 can be extended. In addition, by adopting such a shape, the image displayed on the display panel 110 can be The change appears to be gradual. Therefore, it is easy to view without any discomfort. However, one aspect of the present invention is not limited to these.

[0040] Here, as an example, the area of ​​the display area 111 is larger than the area of ​​the display area 116 . Alternatively, for example, the length of one side of the display area 111 is longer than the length of one side of the display area 116. Therefore, as shown in FIG. 1(B1) and FIG. 1(B2), the rear surface of the housing 101 is In other words, the rear surface of the housing 101 is divided into a display area 116 and an area 201. As an example, the display area 116 is not provided in the area 201. Therefore, in the area 201, it is possible to place objects having various functions.

[0041] For example, the display area 116 has an area of ​​10% or more and 90% or less of the area of ​​the display area 111. More preferably, the display area 116 is, for example, 30% of the area of ​​the display area 111. or more, but not exceeding 70% of the area.

[0042] For example, the display area 116 is 10% or more and 90% or less of the length of one side of the display area 111. More preferably, the display area 116 has a side of length, e.g. It has one side whose length is greater than or equal to 30% and less than or equal to 70% of the length of the side.

[0043] In addition to the display panel 110, the housing 101 has a surface (front surface, back surface, side surface, etc.) , hardware buttons, external connection terminals, image sensors, infrared sensors, microphones, and speakers It may have a fin or the like.

[0044] In addition, in FIG. 1(A1) and FIG. 1(A2), one side surface of the housing 101 is used as a display area. However, a configuration in which the display area overlaps with another side surface is also possible.

[0045] As an example, FIG. 2(A1) and FIG. 2(A2) show a case where a display area 115 is further included. The display area 115 is an area overlapping the side opposite the display area 113. Here, FIG. 2(A1) is a perspective schematic diagram showing the front surface side of the electronic device, FIG. 2(A2) is a perspective schematic diagram showing the back side. An example of the case having a region 201 is shown in FIG. Shown in Figure 2(B1) and Figure 2(B2).

[0046] As another example, in FIG. 3(A1) and FIG. 3(A2), the display panel 110 is 1 shows an example of a configuration having a display area 111, a display area 116, and a display area 112. Here, the display area 112 is set to have an area overlapping one of the side surfaces of the housing 101. In addition, the side on which the display area 112 is provided is the side on which the display area 112 is provided. For example, the side surface on which the display area 113 is provided in FIG. The side on which the display area 112 is provided has one side longer than the other side on which the display area 112 is provided. For example, the side surface has a larger area than the side surface on which the display area 112 is not provided. The side surface on which the display area 112 is provided is, for example, a surface parallel to the long axis direction. Here, FIG. 3(A1) is a perspective view showing the front side of the electronic device. FIG. 3(A1) is a schematic perspective view showing the back side, and FIG. 3(A2) is a schematic perspective view showing the back side. An example of this case is shown in FIG. 3(B1) and FIG. 3(B2).

[0047] As another example, in FIG. 4(A1) and FIG. 4(A2), In this example, the display area 114 has an area overlapping the screen. FIG. 4(A1) is a schematic perspective view showing the front side of the electronic device, and FIG. 4(A2) is a schematic perspective view showing the back side of the electronic device. 4(B1) and 4(B2) are schematic perspective views showing the front side of the semiconductor device. 4(B2).

[0048] As another example, FIG. 5(A), FIG. 5(B), and FIG. 5(C) show a display panel 110 has display area 111, display area 116, display area 112, and display area 113. Here, the display area 112 is one of the sides of the housing 101. The display area 113 is provided on another side of the housing 101 so as to have an overlapping area. The display area 112 is provided so as to have an area overlapping with one of the display areas 112. The side surface on which the display area 113 is provided is longer than the side surface on which the display area 113 is provided. The side on which the display area 112 is provided has a side on which the display area 113 is provided, for example. The side surface has a larger area than the side surface on which the electronic device is mounted. FIG. 5(B) is an example of a perspective schematic diagram showing the rear side. FIG. 5C) is an example of a case different from FIG. 5B. Also, an example of a case having a region 201 is as follows: As shown in Figures 6(A), 6(B), and 6(C).

[0049] With this configuration, the side surface of the housing, not just the surface parallel to the front surface of the housing, In particular, it is possible to display the display area along two or more sides of the housing. Providing such a display is preferable since it increases the variety of displays.

[0050] A display area 111 is arranged along the front surface of the housing 101, and a display area 112 is arranged along the back surface of the housing 101. The display area 116 and each of the display areas arranged along the side are independent display areas. Different images may be displayed using the same display area, or one image may be displayed across two or more display areas. For example, a display area arranged along the front surface of the housing 101 may display an image of The image to be displayed on the display 111 is displayed on a display area 112 provided along the side of the housing 101 or on the The display area 116 is arranged along the back surface of the display area 101. This is also fine.

[0051] For example, a display area 111 provided along the front surface of the housing 101 displays text information and icons. For example, a plurality of icons associated with applications may be displayed. Area 112 may display icons associated with applications and the like.

[0052] In addition, a plurality of display areas (for example, display area 113) are provided along the side surface of the housing 101. and display area 112) to display text information in a flowing (moving) manner. Alternatively, the text may be printed over the display area provided along the front, side and back surfaces. It is also possible to display text information in a flowing (moving) manner. By displaying the message across the entire screen, the user can easily see the message regardless of the orientation of the electronic device, for example when receiving a call. This can prevent the user from missing information.

[0053] In addition, when a call or mail is received, not only the display area 111 but also the display area The display area provided along the side of the area 112, the display area 116, etc., displays caller information. (For example, the caller's name, phone number, email address, etc.) may be displayed. For example, when receiving an email, sender information is displayed in the display area 112 and the display area 113. may be displayed in.

[0054] Also, Fig. 7(A) and Fig. 7(B) show examples of the usage state of electronic devices. In Fig. 7(A), A plurality of icons 121 are displayed in a display area 111, and a slide bar 12 is displayed in a display area 112. 5 is displayed. While touching the slide bar 125 with a finger 126 or the like, the user moves the slide bar. By moving the mouse up and down, the icon 12 displayed in the display area 111 can be changed as shown in FIG. The display contents such as 1 slide up and down accordingly. By sliding the slider 125 downward with a finger 126, multiple icons 121, etc. 1 shows an image of the display sliding upward from display area 111 to display area 113. There are.

[0055] In this example, the image displayed in the display area 111 is an icon. Not limited to this, various information such as document information, images, and videos can be displayed depending on the application being launched. The information can be displayed by sliding the slide bar 125. 12, display area 111, display area 113, display area 114, or display area It can also be placed at 116 etc.

[0056] In addition, during standby time when the electronic device is not in use, The display of the display area 111 provided on the back surface and / or the display area 116 provided along the back surface is turned off. (for example, black display) and display information only in the display area 112 provided along the side In such a situation, the display state may be switched. By not displaying the display area 111 or the display area 116, the power consumption during standby is reduced. Alternatively, the display area 111 may be used for display only, and the display area 1 may be used for display. At least one area, such as the front and rear display areas 16 and 17, should be left undisplayed. It is also possible to reduce power consumption during use.

[0057] Alternatively, a display area 111 is provided along the front surface of the housing 101, and a display area 112 is provided along the back surface of the housing 101. In the display area 116 provided along the side, the display area 112 provided along the side, etc., For example, the display area 111 and the display area 112 may be arranged so that information is displayed only in the display area 112. 16, and the display is turned off in the display area 112 provided along the side. You can also switch to a situation where it is not displayed.

[0058] In addition, in the positions overlapping the display panel 110, specifically in the areas overlapping each display area, It is preferable that the touch sensor has an input device such as a touch sensor. For example, a sheet-shaped capacitive touch sensor may be provided on the display panel 110. Alternatively, the display panel 110 itself may have a touch sensor function. In this case, the display panel 110 is a display panel. It can be said that the in-cell type touch sensor has not only a touch sensor function but also a touch sensor function. The panel may be a capacitive touch sensor or a photoelectric conversion element. Alternatively, an optical touch sensor may be applied to the counter substrate (transistor) of the display panel 110. A board that does not have a touch sensor function. In this case, the display panel 110 may also be an on-cell type touch sensor. It can be said that the touch sensor has not only a function of indicating the position of the touch panel but also a function of a touch sensor. The cover and cover glass on the top surface of the 101 protect it from scratches and other damage, and are equipped with touch sensors. A so-called cover-integrated touch panel having the function of touching the screen may be applied. The optical film of the display panel 110 has a touch sensor function. A sensor may be applied.

[0059] In addition, the input device such as a touch sensor is, for example, a display panel 110 that performs display. However, in one embodiment of the present invention, For example, the display area 111, the display area 112, the display area 113, the display area 114, display area 115, and display area 116, a part of each area, or In the entirety of the display, there may be an area where an input device such as a touch sensor is not provided. For example, a touch sensor or the like may be provided in the entire or part of the display area 116. Alternatively, the entire display area 112 may include an area where no input device is provided. Alternatively, a part of the area and the whole or a part of the display area 114 may be touched. There may be an area where no input device such as a sensor is provided. By providing an area where no sensor is provided, it is possible to prevent malfunction. This makes the device easier to hold.

[0060] For example, display area 111, display area 112, display area 113, display area 114, A combination of touch operations on the display area 115 or the display area 116 and an application It is preferable to associate the operation of the application with the operation of the application.

[0061] As an example, the touch operations on the display area 112, the display area 113, and the display area 115 are Here is an example of how to combine and associate application actions. For example, all three display areas are When a touch operation is performed on the display area 11, the power is turned on or off. When the user touches the display area 114 at the same time, the application related to the email is displayed. When the application is started, the contents of the mail are displayed. If you touch 113 at the same time, the application for making a call will start. In addition, when a touch operation is performed simultaneously on the display area 113 and the display area 114, If so, launch the browser.

[0062] Note that the above-mentioned association between the touch operation and the application is an example. It is preferable that developers of operating systems and application software, as well as users, can set it appropriately. It is nice.

[0063] Or, while touching the display area 111, touch one or more of the other display areas. By allowing each application to operate by touch, This can prevent unauthorized operations from being executed.

[0064] In this way, the combination of touch operations in multiple areas can be linked to the operation of an application. By attaching the device, intuitive operations can be performed, making it a user-friendly human interface. It is possible to realize the face.

[0065] In one embodiment of the electronic device of the present invention, a display is provided not only on the front surface of the housing but also along one or more side surfaces. It is possible to display the image on the back side of the housing. This makes it possible to display a wider variety of images than conventional electronic devices. By providing a touch sensor, it is possible to perform a wider variety of operations than with conventional electronic devices. This makes it possible to realize electronic devices that can be operated more intuitively.

[0066] Here, an example in which various displays are performed using the display panel 110 has been shown. One aspect of the present invention is not limited to this. For example, Therefore, in one aspect of the present invention, the information may not be displayed. In one embodiment, the display panel 110 may be replaced by a lighting device. So, by applying it to lighting equipment, it can be used as interior design with excellent design. Alternatively, one aspect of the present invention is a lighting device that can illuminate in various directions. Alternatively, in one embodiment of the present invention, a backlight can be used instead of the display panel 110. The present invention may be applied to a light source such as a ceiling light or a front light. As part of a display panel, it may be utilized as a lighting device for the display panel.

[0067] In this embodiment, one or two sides of the housing 101 are used as a display area. However, one embodiment of the present invention is not limited to this. An example is shown in FIG. 8(A2). Here, FIG. 8(A1) is a perspective view showing the front side of an electronic device. FIG. 8(A1) is an example of a perspective schematic diagram showing the back side. FIG. 8B1) and FIG. 8B2 show an example of a perspective schematic diagram showing the front and back sides of an electronic device. 9(A1) and 9(A2) are perspective views showing the front and back sides of an electronic device. An example of a schematic diagram is shown in FIG. 9(B1) and FIG. 9(B2) show the front and back sides of an electronic device. FIG. 2 shows an example of a schematic perspective view illustrating the front side.

[0068] In these cases, the area 201 may be provided in the same manner. 10(A1) and 10(A2) are schematic perspective views showing the front and back sides of the electronic device. FIG. 10(B1) and FIG. 10(B2) show the front side and An example of a perspective schematic diagram showing the back side is shown. FIG. 11B shows an example of a perspective schematic diagram showing the front and back sides of a child device. FIG. 11(B2) shows an example of a schematic perspective view showing the front and back sides of an electronic device.

[0069] In this embodiment, an example in which one display panel 110 has a plurality of display areas is used. However, one embodiment of the present invention is not limited to this. For example, the display area 111 and the display area 116 may be configured using a display panel. The display panels may be different from each other. 12(A1) and 12(A2). Here, FIG. 12(A1) shows the front surface of the electronic device. 12(A2) is a schematic perspective view showing the rear side. FIG.

[0070] This embodiment describes an example of the basic principle. Any part or all of the above may be freely combined with any part or all of the other embodiments. , can be applied or substituted.

[0071] (Embodiment 2) In this embodiment, an example in which an imaging element is arranged in the region 201 will be shown. In this case, the image sensor is disposed in the area 201 in FIG. 1(B1) and FIG. 1(B2). However, an embodiment of the present invention is not limited to this. In other drawings, such as FIG. 2(B1) and FIG. 2(B2), the region 201 is similarly A variety of elements can be arranged.

[0072] First, FIG. 13(A1) is a schematic perspective view showing the front surface side of the electronic device, and FIG. 13(A2) is a schematic perspective view showing the front surface side of the electronic device. 2 is a perspective schematic diagram showing the rear side. An image pickup element 202 is provided in the area 201. The image sensor 202 has a function of capturing an image. The image sensor 202 has a function as a camera. The optical system may also have various optical components such as lenses.

[0073] As shown in FIG. 13B, the image sensor 202 is directed toward the object 205. At this time, the display area 111 displays, for example, In the display area 111, a real-time image 206 of a subject 205 is displayed. The situation of the subject 205 can be displayed in real time. Then, still images and videos of the subject 205 are captured. When the illuminance of the lighting image 205 is low, for example, the lighting image 204 is displayed. From the area where the image 204 is displayed, light is emitted toward the subject 205. 205 can increase the illuminance. Therefore, you can take proper and beautiful images. do.

[0074] It is preferable that the lighting image 204 is, for example, a white image. One aspect of the present invention is not limited to this. By changing the color of the light irradiated on the subject 205, For example, when the surrounding environmental light is reddish, In the case where the color is blueish, greenish, etc., the image of the lighting image 204 is By adjusting the color to the appropriate level, a suitable image can be captured.

[0075] In addition, the display color of the illumination image 204 may be changed and the subject 205 may be photographed multiple times. For example, when the illumination image 204 is displayed in white, incandescent light, and neutral white, the images are taken. Then, by processing these images, appropriate photographic images can be obtained. Yes, it is possible.

[0076] In addition, as an example of the lighting image 204, the image has the same color and gradation over the entire surface. However, one embodiment of the present invention is not limited to this. In each region a different color image may be applied.

[0077] Next, as another example, when an image sensor 202 and an illumination device 203 are arranged in an area 201, Examples of this are shown in FIG. 14(A1) and FIG. 14(A2).

[0078] Here, FIG. 14(A1) is a perspective schematic diagram showing the front surface side of the electronic device, and FIG. 14B, the image sensor 202 and the illuminator 203 are arranged in a perspective view. The light emitting element 203 can be directed toward a subject 205 to capture still images, videos, and the like. At this time, for example, an image 206 of a subject 205 is displayed in the display area 111. The display area 111 can display the status of the subject 205 in real time. Then, the user can take still images or videos of the subject 205 while checking the image 206. At this time, for example, an image 207 of a subject 205 is also displayed in the display area 116. As a result, the subject 205 can see how he or she feels while looking at the image 207. Therefore, you can check whether the image is being taken at the right angle. It is possible.

[0079] It should be noted that the image 206 and the image 207 are displayed in different display areas. Therefore, the size and resolution of the displayed image may differ. It can be said that the image 206 and the image 207 are different images. 06 and image 207 may be exactly the same size and have the same resolution.

[0080] When the illuminance of the subject 205 is low, the light from the lighting element 203 is directed toward the subject 205. As a result, the illuminance of the subject 205 can be increased. You can take beautiful images.

[0081] It is preferable that the lighting element 203 emits white light, for example. One aspect of the lighting is not limited to this. This allows the color of light irradiated on the subject 205 to be changed. For example, if the surrounding environmental light is reddish, the subject 205 can be captured in blue. In the case of a sexy color, a green color, etc., the light emission color of the lighting element 203 is appropriately adjusted. By adjusting the color of the image to a suitable color, an appropriate image can be taken.

[0082] In addition, the subject 205 may be photographed multiple times by changing the color of light emitted by the lighting element 203. For example, when the light emitted from the lighting element 203 is white, when it is incandescent, and when it is natural white, the photograph is taken. Then, by processing these images, appropriate photographed images can be obtained. come.

[0083] In addition, it is desirable for the lighting element 203 to have one color or one gradation, for example. However, one embodiment of the present invention is not limited to this. Each may emit light of a different color.

[0084] In FIG. 14(A2), the image 207 is displayed, but as shown in FIG. 15(A), In addition, the lighting image 204 may also be displayed, and depending on the situation, as shown in FIG. 15(B), In this way, the image 207 may not be displayed and the lighting image 204 may be displayed. The light from the image 204 and the light from the lighting element 203 are used to increase the brightness and to reduce the illumination light. In other words, it can be used as multiple lighting elements. .

[0085] In this example, the display area 111 and the display area 116 are used. The invention is not limited to this aspect, and other display areas may be utilized.

[0086] For example, an icon 208 may be displayed in the display area 113. FIG. 16(A1) shows the main components of the electronic device. FIG. 16(A1) is a schematic perspective view showing the front side, and FIG. 16(A2) is a schematic perspective view showing the back side. Examples are shown in FIG. 16(B1) and FIG. 16(B2). Here, FIG. 16(B1) shows an electronic device. FIG. 16(B2) is a schematic perspective view showing the front side of the device, and FIG. 16(B3) is a schematic perspective view showing the back side of the device. .

[0087] Here, the icon 208 has a function as a shutter button, for example. Therefore, when shooting, you can finish the operation by touching the icon 208. Or, when you want to focus, touch icon 208. This allows the work to be carried out.

[0088] In this example, the icon 208 is used to realize a function as a shutter button. However, one aspect of the present invention is not limited to this. A shutter function may be realized by providing a button or the like.

[0089] As another example, an icon 209 may be displayed in the display area 112. Examples of the above are shown in FIG. 17(A1) and FIG. 17(A2). Here, FIG. 17(A1) shows an electronic device FIG. 17(A1) is a schematic perspective view showing the front surface side of the device, and FIG. 17(A2) is a schematic perspective view showing the back surface side of the device. .

[0090] Here, the icon 209 has a function as a slider, for example. By moving the slider bar, you can enlarge or reduce the image when shooting. In other words, the zoom function can be controlled. The lens may be controlled to optically enlarge or reduce the image. Therefore, before taking a picture, the icon can be By moving the bar on the left, you can control the magnification at which the image is taken. come.

[0091] In this embodiment, the zoom function is realized by using the icon 209. The embodiment is not limited to this. For example, a dedicated hardware such as an operation button may be provided. In this way, a zoom function may be realized.

[0092] Note that the icon 208 and the icon 209 are displayed in the same display area (for example, the display area 112). In addition, each display area may further include various icons, text, and the like. It is also possible to display text, images, etc.

[0093] In this way, when the area 201 is provided, the image sensor 202 and the illumination device 203 are arranged in the wide area. Therefore, for example, the image sensor 202 can be provided with a large Alternatively, the image sensor 202 may be a large image sensor 202. This allows you to take beautiful, high-resolution images. .

[0094] In this case, the image sensor 202 and the lighting device 203 are arranged in the area 201. However, one embodiment of the present invention is not limited to this. An image sensor 202 and an illumination device 203 may be provided in the position shown in FIG. 8(A1) and 18(A2). Here, FIG. 18(A1) shows the front side of the electronic device. FIG. 18(A2) is a schematic perspective view showing the back side. Examples of the above are shown in FIG. 18(B1) and FIG. 18(B2). Here, FIG. 18(B1) shows an electronic device FIG. 18(B2) is a schematic perspective view showing the front side of the device, and FIG. 18(B3) is a schematic perspective view showing the back side of the device. .

[0095] In addition, a plurality of image pickup elements 202 may be arranged. 2 may be arranged in the area 201. Alternatively, all the image sensors 202 may be arranged in the area 2 It may be placed in a location other than 01.

[0096] Although an example in which the region 201 is provided has been shown, one embodiment of the present invention is not limited to this. In some cases or depending on the situation, the area 201 may not be provided. In this case, the display area 111 and the display area 116 may be, for example, approximately equal to each other. An example of this case is shown in Fig. 19(A1) and Fig. 19(A2). Here, FIG. 19(A1) is a schematic perspective view showing the front surface side of the electronic device, and FIG. 2) is a perspective schematic diagram showing the back side. Similarly, another example is shown in FIG. 19(B1) and FIG. 2). Here, FIG. 19(B1) is a perspective schematic diagram showing the front surface side of the electronic device. FIG. 19(B2) is a schematic perspective view showing the back surface side.

[0097] In addition, this type of photography requires software that functions as a camera. This may be done while the software is running, or when the software is performing another function. For example, software that realizes the function of a videophone may be executed as part of the This may be done while the software is running.

[0098] These functions can be realized by software or hardware. In the case of software, it may be installed on electronic devices from a computer. , via wired or wireless telecommunications lines, or installed in an electronic device; or The software may be stored in a storage device included in the electronic device from the beginning.

[0099] This embodiment may be modified, added, revised, deleted, or altered in whole or in part with respect to other embodiments. This corresponds to an application, a superordinate concept, or a subordinate concept. Any part or all of the present invention may be freely combined with any part or all of the other embodiments, or may be used as appropriate. It can be used or substituted.

[0100] (Embodiment 3) In this embodiment, an example in which various objects are arranged in the area 201 is shown. Now, in FIG. 1(B1) and FIG. 1(B2), when various objects are placed in the area 201, FIG. 2 shows an example of a semiconductor device according to the present invention. Similarly, in FIG. 2B1, FIG. 2B2, etc., various elements are arranged in the region 201. In addition, the items described in the second embodiment can be arranged in the area 201, etc. It may be possible.

[0101] First, as an example, a case where a battery 401 is provided in the area 201 will be described with reference to FIG. FIG. 20 is a perspective schematic diagram showing the back side of the electronic device. The cover is shown removed from the body 101 and the battery 401 is shown removed. When the battery 401 is placed in the housing 101, a lid is placed on the battery 401. In this way, the battery 401 can be prevented from falling. By disposing the battery 401 there, the battery 401 can be easily replaced. It is possible.

[0102] In FIG. 20, the battery 401 is removable. However, the present invention is not limited to this. In some cases or depending on the situation, a lid may be provided. The battery 401 may be made not removable. Although a battery 401 is provided, since there is no display area, the battery 401 cannot be made thick. Therefore, the capacity of the battery 401 can be increased.

[0103] Next, as another example, a case where a receiving means 402 is provided in the area 201 will be described with reference to FIG. 1. The receiving means 402 may be an antenna, a coil, an electrode, or the like. 21 is a perspective schematic diagram showing the rear side of the electronic device. A receiving means 402 is provided in the device 402, and wireless communication is performed with a communication device 403. For example, the receiving means 402 may be a near field communication (NFC) This can be used as an antenna for electronic money and credit cards. In this case, the area 201 is a display area 1. Therefore, for example, the touch sensor is also located in the area 20. 1 does not have a touch sensor or a display panel. There is no interference from magnetism or electromagnetic waves, and the receiving means 402 can be used efficiently. come.

[0104] In addition, the receiving means 402 may have a transmitting function instead of a receiving function. For example, the receiving means 402 may have both a receiving function and a transmitting function. It would be good if we could exchange information, energy, etc.

[0105] The receiving means 402 can be used not only for NFC but also for television, telephone, Bluetooth, It can be used for various purposes, such as short-distance communication. It can also be used to charge electronic devices. For example, by using a coil or an antenna, , you can wirelessly charge your electronic devices.

[0106] Next, as another example, a speaker 404 and a speaker 405 are provided in the area 201. An example of such a case is shown in FIG. 22. FIG. 22 is a perspective schematic diagram showing the rear side of the electronic device. In FIG. 22, the housing 101 is provided with a speaker 404 and a speaker 405. As an example, the speaker 404 outputs a sound source for the left ear, and the speaker 405 can output a sound source for the right ear. In this way, the area 201 is provided. Therefore, the speaker 404 and the speaker 405 can be placed apart. It can make a certain sound.

[0107] This embodiment may be modified, added, revised, deleted, or altered in whole or in part with respect to other embodiments. This corresponds to an application, a superordinate concept, or a subordinate concept. Any part or all of the present invention may be freely combined with any part or all of the other embodiments, or may be used as appropriate. It can be used or substituted.

[0108] (Embodiment 4) In this embodiment, a display panel (display device) or an electronic device can be bent, folded, or We will now describe an example of a case in which the invention can be modified and used in various ways. This will be explained using Figures 23(A), 23(B) and 23(C).

[0109] FIG. 23A shows an electronic device 150 in a state where the display panel 110 is unfolded (first state). FIG. 23C shows the electronic device 1 in a folded state (second state) of the display panel 110. FIG. 23(B) shows electronic device 150 in a bent state. That is, the display panel 110 is in an unfolded state (first state) or in a Electronic device 150 in the process of changing from one folded form (second form) to the other 23B. In addition, in FIG. 23B and FIG. 23C, the display panel 110 However, one embodiment of the present invention is not limited to this. The display panel 110 may be folded so as to be hidden inside.

[0110] The electronic device 150 shown in FIG. 23(A), FIG. 23(B), and FIG. 23(C) has flexibility. The electronic device 150 further includes a display panel 110. The support panel 155 has a number of support panels 155a and a number of support panels 155b.

[0111] The support panel 153a is made of a material that is less flexible than the display panel 110 ( In other words, the support panel 155a is made of a material that is difficult to bend. For example, b is a material that is less flexible than the support panel 153a (i.e., less flexible). As shown in Figures 23(A), 23(B), and 23(C), the display panel is The display panel 110 has a support panel on the outer periphery thereof and on the surface thereof facing the display unit. This is preferable as it increases the mechanical strength of the display panel 110 and makes the structure less susceptible to breakage.

[0112] In addition, the support panels 153a, 155a, and 155b have a light-shielding property. When the display panel 110 is made of a material that can withstand external light irradiation, the display panel 110 can be used as a display panel. This can suppress the light deterioration of transistors used in the drive circuit section. This is preferable.

[0113] Although not shown in FIGS. 23(A), 23(B), and 23(C), the electronic device 1 The calculation unit, storage unit, detection unit, etc. of 50 are connected between the display panel 110 and the support panel 155b. can be placed in between.

[0114] The support panel 153a, the support panel 155a, and the support panel 155b can be used The material can be plastic, metal, alloy, rubber, etc. Using rubber or the like is preferable because it results in a support panel that is lightweight and less likely to be damaged. For example, the support panels 153a, 155a, and 155b may be made of silicon. Rubber, stainless steel, or aluminum may be used.

[0115] In the electronic device 150, the display panel 110 including the flexible display unit has an internal When the electronic device 150 is not in use, it can be folded upside down or outward. If the display panel 110 is bent inward, the display panel 110 may become scratched or dirty. This can be suppressed.

[0116] As an example, as shown in FIG. 23A, a region 2 is provided near the display panel 110. Therefore, as an example, similar to the other embodiments, the display area 1 The display area 11 is larger than the display area 116. The area 201 is the same as the other embodiments. You can place various things on it.

[0117] Here, the folded state as shown in FIG. 23(C) is shown in FIG. 24(A) and FIG. 24(B). FIG. 24(A) shows an example of the front side, and FIG. 24(B) shows an example of the back side. In the region 201, for example, an image sensor 202 and an illumination device 203 are arranged. In the display area 111, for example, an image 206 is displayed. In the display area 116, for example, For example, an image 207 is displayed. For example, the case where the icon 208 and the icon 209 are displayed is shown in FIG. 24(C) and FIG. 4(D) and 24(E), you can zoom in and out by moving the slider bar. You can control the zoom function.

[0118] In addition, in FIG. 23(A), FIG. 23(B), and FIG. 23(C), when the region 201 is provided, However, one embodiment of the present invention is not limited to this. Examples of cases where the above is not the case are shown in Figs. 25(A), 25(B), and 25(C). The folded state is shown in Figures 26(A) and 26(B). 26(C) or 26(D).

[0119] In addition, in Fig. 23(A), Fig. 23(B), and Fig. 23(C), when there is one fold location, However, one aspect of the present invention is not limited to this. For example, an example in which there are three folds is shown in FIG. 27(A). An example in which there are four fold locations is shown in FIG. 27(B). Similarly, the region 201 does not necessarily have to be provided. An example of this case is shown in FIG.

[0120] This embodiment may be modified, added, revised, deleted, or altered in whole or in part with respect to other embodiments. This corresponds to an application, a superordinate concept, or a subordinate concept. Any part or all of the present invention may be freely combined with any part or all of the other embodiments, or may be used as appropriate. It can be used or substituted.

[0121] (Embodiment 5) In this embodiment, a foldable LCD panel that can be used for an electronic device according to one embodiment of the present invention will be described. The configuration of the touch panel will be described with reference to FIG.

[0122] FIG. 28A illustrates a structure of a touch panel that can be used in an electronic device of one embodiment of the present invention. This is a front view.

[0123] FIG. 28(B) is a cross-sectional view taken along the line AB and the line CD in FIG. 28(A). .

[0124] FIG. 28(C) is a cross-sectional view taken along line EF in FIG. 28(A).

[0125] <Explanation of the front view> The touch panel 300 exemplified in this embodiment has a display unit 301 (see FIG. 28A). (see).

[0126] The display unit 301 includes a plurality of pixels 302 and a plurality of imaging pixels 308. This allows the detection of a finger or the like touching the display unit 301. A touch sensor can be formed using the above-mentioned.

[0127] The pixel 302 includes a plurality of sub-pixels (e.g., sub-pixel 302R). and a pixel circuit capable of supplying power to drive the light-emitting element.

[0128] The pixel circuit includes wiring that can supply a selection signal and a line that can supply an image signal. The semiconductor device is electrically connected to a wiring that can be connected to the semiconductor device.

[0129] The touch panel 300 also includes a scan line driver that can supply a selection signal to the pixel 302. A circuit 303g(1) and an image signal line driving circuit capable of supplying an image signal to the pixel 302. It has a path 303s(1).

[0130] The imaging pixel 308 includes a photoelectric conversion element and an imaging pixel circuit that drives the photoelectric conversion element. .

[0131] The imaging pixel circuit is provided with wiring capable of supplying a control signal and a power supply potential. The wires can be electrically connected.

[0132] The control signal may be, for example, a signal to select an imaging pixel circuit that reads out a recorded imaging signal. a signal that can initialize the imaging pixel circuit; and a signal that can detect when the imaging pixel circuit detects light. Examples of such signals include signals that can determine the time to be detected.

[0133] The touch panel 300 includes an imaging pixel driver that can provide control signals to the imaging pixels 308. and an image pickup signal line drive circuit 303s(2) that reads out an image pickup signal. .

[0134] <Explanation of the cross-sectional view> The touch panel 300 includes a substrate 310 and an opposing substrate 370 that faces the substrate 310. (See FIG. 28(B)).

[0135] The substrate 310 is a flexible substrate 310b, which prevents unintended diffusion of impurities into the light emitting element. A barrier film 310a for preventing the formation of a barrier layer 310a and an adhesive layer 31 for bonding the barrier film 310a to the substrate 310b. 0c is a laminated body.

[0136] The opposing substrate 370 is a flexible substrate 370b, which prevents unintended impurities from spreading to the light emitting element. A barrier film 370a for preventing diffusion and an adhesive layer for bonding the barrier film 370a to the substrate 370b. 370c (see FIG. 28(B)).

[0137] The sealing material 360 bonds the opposing substrate 370 and the substrate 310 together. The layer has a refractive index higher than that of air and also serves as an optical bonding layer. The light emitting element 350 R is located between the substrate 310 and the opposing substrate 370 .

[0138] 《Pixel Structure》 The pixel 302 includes a subpixel 302R, a subpixel 302G, and a subpixel 302B (FIG. 2). 8(C)). The subpixel 302R includes a light-emitting module 380R. G includes a light-emitting module 380G, and subpixel 302B includes a light-emitting module 380B. .

[0139] For example, subpixel 302R supplies power to light emitting element 350R and light emitting element 350R. The pixel circuit includes a transistor 302t that can achieve the above-described effect (see FIG. 28B). The light emitting module 380R includes a light emitting element 350R and an optical element (e.g., a color layer 367R). Equipped with.

[0140] The light emitting element 350R includes a lower electrode 351R, an upper electrode 352, and a lower electrode 351R and an upper electrode 353. Between the poles 352, there is a layer 353 containing a light-emitting organic compound (see FIG. 28(C)).

[0141] The layer 353 containing a light-emitting organic compound includes a light-emitting unit 353a, a light-emitting unit 353b, and a light-emitting An intermediate layer 354 is provided between the light-emitting unit 353a and the light-emitting unit 353b.

[0142] The light emitting module 380R has a colored layer 367R on the opposing substrate 370. Any material that transmits light having a wavelength of red, green, or blue may be used. A material that selectively transmits light can be used. Alternatively, the light emitted by the light-emitting element can be directly transmitted through the material. Alternatively, a transparent region may be provided.

[0143] For example, the light emitting module 380R includes a sealing layer in contact with the light emitting element 350R and the color layer 367R. The substrate 360 ​​has a material 360 .

[0144] The colored layer 367R is located so as to overlap the light emitting element 350R. A part of the light emitted by R passes through the sealing material 360, which also serves as an optical bonding layer, and the colored layer 367R. Then, the light is emitted to the outside of light emitting module 380R as indicated by the arrow in the figure.

[0145] In this embodiment, a light-emitting element is used as a display element. The embodiment is not limited thereto.

[0146] For example, in this specification, a display element, a display device which is a device having a display element, a light-emitting A light-emitting device, which is a device having an element and a light-emitting element, can be used in various forms or can be used in various forms. As an example of a display element, a display device, a light-emitting element, or a light-emitting device, EL (electroluminescence) elements (EL elements including organic and inorganic materials, organic EL LED elements, inorganic EL elements), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc. etc.), transistors (transistors that emit light according to current), electron emission elements, liquid crystal elements, Electronic ink, electrophoretic element, grating light valve (GLV), plasma display Display devices using MEMS (Micro-Electro-Mechanical Systems) Display element, Digital Micromirror Device (DMD), DMS (Digital Microsystem Scatter), MIRASOL (registered trademark), IMOD (Interference Module) motion element, shutter type MEMS display element, optical interference type MEMS display element, Electrowetting elements, piezoelectric ceramic displays, carbon nanotubes, Displays whose contrast, brightness, reflectance, transmittance, etc. change due to electromagnetic effects. An example of a display device using an EL element is an EL display. An example of a display device using electron-emitting elements is a field emission display. Flat-panel display (FED) or flat-panel display (SED:Surface-c Induction Electron-emitter Display) An example of a display device using a liquid crystal element is a liquid crystal display (transmissive liquid crystal display). Semi-transmissive LCD, reflective LCD, direct-view LCD, A type of display device that uses electronic ink or electrophoretic elements. An example is electronic paper. Note that semi-transmissive liquid crystal displays and reflective liquid crystal displays are also used. When realizing a display, a part or the whole of the pixel electrode functions as a reflective electrode. For example, a part or the whole of the pixel electrode may be made of aluminum. In this case, the reflective electrode may have a thickness of 100 nm or less, and the reflective electrode may have a thickness of 100 nm or less. This can further reduce power consumption. can be done.

[0147] <Touch panel configuration> The touch panel 300 has a light-shielding layer 367BM on the opposing substrate 370. M is provided so as to surround a colored layer (for example, the colored layer 367R).

[0148] The touch panel 300 includes an anti-reflection layer 367p at a position overlapping the display unit 301. As the antireflection layer 367p, for example, a circular polarizing plate can be used.

[0149] The touch panel 300 includes an insulating film 321. The insulating film 321 is connected to the transistor 302t. The insulating film 321 serves as a layer for flattening unevenness caused by the pixel circuits. In addition, the diffusion of impurities into the transistor 302t and the like can be suppressed. An insulating film in which layers capable of doing so are stacked can be used as the insulating film 321.

[0150] The touch panel 300 has a light emitting element (for example, a light emitting element 350R) on an insulating film 321. do.

[0151] The touch panel 300 has a partition wall 328 that overlaps an end of the lower electrode 351R on the insulating film 321. (See FIG. 28(C)). A spacer 329 is provided on the septum 328 .

[0152] Configuration of the Image Signal Line Driving Circuit The image signal line driver circuit 303s(1) includes a transistor 303t and a capacitor 303c. The driver circuit can be formed on the same substrate as the pixel circuit in the same process. As shown in FIG. 8(B), the transistor 303t has a second gate on the insulating film 321. The second gate may be electrically connected to the gate of the transistor 303t. Alternatively, different potentials may be applied to these. If necessary, the second gate may be provided in the transistor 308t, the transistor 302t, etc.

[0153] <Imaging pixel configuration> The imaging pixel 308 is a photoelectric conversion element 308p and a light beam irradiated on the photoelectric conversion element 308p. The imaging pixel circuit includes a transistor 308t Includes.

[0154] For example, a pin-type photodiode can be used as the photoelectric conversion element 308p.

[0155] Other configurations The touch panel 300 includes wiring 311 through which a signal can be supplied, and a terminal 319. The wiring 311 is provided to supply signals such as image signals and synchronization signals. The FPC 309(1) is electrically connected to the terminal 319.

[0156] In addition, a printed wiring board (PWB) may be attached to the FPC309(1). stomach.

[0157] The transistors formed in the same process are transistor 302t, transistor 303 t, transistor 308t, and the like.

[0158] The transistor structure may be a bottom gate type, a top gate type, or the like. A transistor can be applied.

[0159] In addition to the gate, source, and drain of the transistor, the various wiring that makes up the touch panel Possible materials for the wires and electrodes include aluminum, titanium, chromium, nickel, Kel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten A single metal consisting of arsenic or an alloy consisting mainly of this metal is used in a single-layer structure or a multilayer structure. For example, a single-layer structure of an aluminum film containing silicon, an aluminum film on a titanium film, A two-layer structure in which an aluminum film is laminated on a tungsten film, a two-layer structure in which an aluminum film is laminated on a tungsten film, a copper-magnesium film, A two-layer structure in which a copper film is laminated on a titanium film. a two-layer structure in which a copper film is laminated on a tungsten film; a two-layer structure in which a titanium film or a titanium nitride film is laminated on a tungsten film; Then, an aluminum film or a copper film is laminated on the titanium film or the titanium nitride film, and A three-layer structure in which a titanium film or titanium nitride film is formed on the first layer, a molybdenum film or a nitride film is formed on the second layer, and A molybdenum film and an aluminum film or a molybdenum nitride film are laminated on the molybdenum film or the molybdenum nitride film. A three-layer structure is formed by laminating a copper film on a molybdenum film or a molybdenum nitride film on top of the copper film. The structure includes transparent conductive materials including indium oxide, tin oxide, or zinc oxide. In addition, when copper containing manganese is used, the controllability of the shape by etching is improved. Therefore, it is preferable.

[0160] Transistors such as transistor 302t, transistor 303t, and transistor 308t As an example, it is preferable to use silicon as the semiconductor in which the channel of the transistor is formed. Although amorphous silicon may be used as the silicon, silicon having crystallinity is particularly preferred. It is preferable to use microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon is formed at a lower temperature than single crystal silicon. It has high field effect mobility and high reliability compared to amorphous silicon. By applying such a polycrystalline semiconductor to a pixel, the aperture ratio of the pixel can be improved. Even when the pixels are extremely fine, the gate driver circuit and the source driver circuit are This allows the elements to be formed on the same substrate, reducing the number of parts that make up electronic devices. can be done.

[0161] Here, the pixels included in each display area provided on the display panel 110 and the It is preferable to use an oxide semiconductor for a semiconductor device such as a transistor to be used in the semiconductor device. It is preferable to use an oxide semiconductor having a larger band gap than silicon for the silicon. If a semiconductor material with a wider band gap and lower carrier density than that of a capacitor is used, This is preferable because it can reduce the current when the transistor is in the off state.

[0162] For example, the oxide semiconductor may contain at least indium (In) or zinc (Zn It is preferable that the oxide contains In-M-Zn (wherein M is Al, Ti, Metals such as Ga, Ge, Y, Zr, Sn, La, Ce or Hf) nothing.

[0163] In particular, the semiconductor layer has a plurality of crystal parts, and the crystal parts have a c-axis aligned with a surface on which the semiconductor layer is formed. or oriented perpendicular to the upper surface of the semiconductor layer and having no grain boundary between adjacent crystal portions. An oxide semiconductor film is preferably used.

[0164] Such an oxide semiconductor does not have crystal grain boundaries, so that when the display panel is curved, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in display panels that are flexible and can be curved. There can be.

[0165] By using such materials for the semiconductor layer, the fluctuation of electrical characteristics is suppressed, and reliability is improved. This allows for high-performance transistors.

[0166] In addition, due to its low off-state current, the charge stored in the capacitance through the transistor can be released for a long period of time. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the gradation of the image displayed in the display area. As a result, it is possible to realize electronic equipment with extremely reduced power consumption.

[0167] Regarding preferred forms of oxide semiconductors applicable to the semiconductor layer and methods for forming the same, This will be explained in detail in a later embodiment.

[0168] A method for forming a flexible light emitting panel will now be described.

[0169] For the sake of convenience, the term "pixels and driving circuits" refers to a configuration including optical members such as color filters. The element layer includes, for example, a display element, and in addition to the display element, It has wiring that electrically connects elements, and elements such as transistors used in pixels and circuits. Good too.

[0170] In addition, the support having an insulating surface on which the element layer is formed is referred to as a substrate. Let us assume that.

[0171] As a method for forming an element layer on a substrate having a flexible insulating surface, A method for forming a contact layer and forming an element layer on a support substrate having a different rigidity from the substrate Thereafter, the element layer is peeled off from the supporting base material and the element layer is transferred to the base material.

[0172] When the material constituting the base material has heat resistance against the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since this simplifies the process. When the element layer is formed in a state where the substrate is fixed to a supporting substrate, the substrate can be easily transported within and between devices. This is preferable because it makes things easier.

[0173] In addition, when a method is used in which an element layer is formed on a supporting substrate and then transferred to the substrate, the supporting substrate is first A release layer and an insulating layer are laminated on the support substrate, and an element layer is formed on the insulating layer. The support substrate and the element layer are peeled off and transferred to the substrate. Materials may be selected such that release occurs at the interface of the edge layer or in the release layer.

[0174] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and an oxide layer of the metal material A layer including a substance is laminated, and a layer in which silicon nitride or silicon oxynitride is laminated on a peeling layer It is preferable to use a high melting point metal material. This is desirable.

[0175] Peeling can be achieved by applying mechanical force, etching the peeling layer, or by delaminating the peeling interface. The peeling may be performed by dropping a liquid on a portion of the surface and allowing it to penetrate into the entire peeling interface. Alternatively, the peeling may be performed by applying heat to the peeling interface, utilizing the difference in thermal expansion.

[0176] In addition, when peeling is possible at the interface between the support substrate and the insulating layer, it is not necessary to provide a peeling layer. For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating layer. A part of the organic resin is locally heated using a laser beam or the like to form a peeling starting point. The separation may be performed at the interface between the glass and the insulating layer. Providing a metal layer between the edge layers and heating the metal layer by passing an electric current through the metal layer. The metal layer and the insulating layer may be peeled off at the interface by using an organic resin. The insulating layer can be used as the substrate.

[0177] Examples of flexible substrates include polyethylene terephthalate (PET), poly Polyester resins such as ethylene naphthalate (PEN), polyacrylonitrile resins, Polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethylene Polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene Resins, polyamide-imide resins, polyvinyl chloride resins, etc. are examples. In particular, It is preferable to use a material with a low thermal expansion coefficient, for example, 30×10 -6 / K or less Polyamide-imide resin, polyimide resin, PET, etc. can be suitably used. Substrates made of resin-impregnated fibers (also called prepregs) and inorganic fillers mixed with organic resins It is also possible to use a substrate having a reduced thermal expansion coefficient.

[0178] When the above materials contain fibrous bodies, the fibrous bodies are made of high strength organic or inorganic compounds. High strength fibers are specifically fibers with high tensile modulus or Young's modulus. Representative examples are polyvinyl alcohol fibers, polyester fibers, and polyvinyl alcohol fibers. Mid fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxy Examples of the fiberglass include Sasol fiber, glass fiber, and carbon fiber. Examples of glass fibers include those made of glass fiber such as sappan, S-glass, D-glass, and Q-glass. Alternatively, it is used in the form of a nonwoven fabric, and the structure in which the fiber body is impregnated with resin and the resin is hardened is made flexible. As a substrate having flexibility, a substrate made of a fiber body and a resin may be used. The use of a structure is preferable because it improves reliability against damage caused by bending or local pressure. stomach.

[0179] Note that the display device of one embodiment of the present invention is an active matrix type display device having an active element in a pixel. Alternatively, a passive matrix system in which the pixels do not have active elements can be used.

[0180] In the active matrix method, a transistor is used as an active element (active element, nonlinear element). By using not only transistors but also various active elements (active elements, nonlinear elements), For example, MIM (Metal Insulator Metal) or T It is also possible to use FD (Thin Film Diode) and other elements. Since the number of manufacturing steps is small, it is possible to reduce manufacturing costs and improve yields. Alternatively, these elements can improve the aperture ratio due to their small size. This makes it possible to achieve low power consumption and high brightness.

[0181] As a non-active matrix type, active elements (active elements, nonlinear elements It is also possible to use a passive matrix type that does not use active elements. Since it does not use any nonlinear elements, there are fewer manufacturing steps, which reduces manufacturing costs and improves yield. It is possible to improve the accuracy. Or, it is possible to use active elements (active elements, nonlinear elements) Since the aperture ratio is not increased, it is possible to achieve low power consumption and high brightness. It is possible to do this.

[0182] This embodiment may be modified, added, revised, deleted, or altered in whole or in part with respect to other embodiments. This corresponds to an application, a superordinate concept, or a subordinate concept. Any part or all of the present invention may be freely combined with any part or all of the other embodiments, or may be used as appropriate. It can be used or substituted.

[0183] (Embodiment 6) In this embodiment, a foldable LCD panel that can be used for an electronic device according to one embodiment of the present invention will be described. The configuration of the touch panel will be described with reference to FIG.

[0184] FIG. 29 is a cross-sectional view of the touch panel 500.

[0185] The touch panel 500 includes a display unit 501 and a touch sensor 595. The panel 500 includes a substrate 510, a substrate 570, and a substrate 590. Both substrate 570 and substrate 590 are flexible.

[0186] The display unit 501 includes a substrate 510, a plurality of pixels on the substrate 510, and a signal supply unit for supplying signals to the pixels. The plurality of wirings 511 are arranged on the outer periphery of the substrate 510. The terminal 519 is connected to the FPC 509 ( 1) and electrically connect it.

[0187] <Touch sensor> The substrate 590 includes a touch sensor 595 and a plurality of electrodes electrically connected to the touch sensor 595. The wiring 598 is routed around the periphery of the substrate 590, and a part of the wiring 598 is constitutes a terminal, which is electrically connected to FPC509(2).

[0188] As the touch sensor 595, for example, a capacitive touch sensor can be used. The capacitance type includes a surface type capacitance type and a projected type capacitance type.

[0189] The projected capacitive type is classified into self-capacitance type, mutual capacitance type, etc., mainly based on the difference in the driving method. The mutual capacitance method is preferable because it enables simultaneous multi-point detection.

[0190] In the following, a case where a projected capacitive touch sensor is applied will be described.

[0191] In addition, various sensors capable of detecting the proximity or contact of a detection target such as a finger are used. It can be used.

[0192] The projected capacitive touch sensor 595 has an electrode 591 and an electrode 592. 591 is electrically connected to one of the multiple wirings 598, and the electrode 592 is connected to the multiple wirings 598. The other of the two is electrically connected to the other of the two.

[0193] The wiring 594 electrically connects the two electrodes 591 that sandwich the electrode 592. It is preferable that the area of ​​the intersection between the pole 592 and the wiring 594 be as small as possible. This reduces the area of ​​the region where no electrodes are provided, and reduces unevenness in transmittance. As a result, unevenness in the luminance of the light passing through the touch sensor 595 can be reduced.

[0194] The electrodes 591 and 592 may have various shapes. 91 are arranged so that there is as little gap as possible, and the electrode 592 is connected to the electrode 59 via an insulating layer. A configuration may be adopted in which a plurality of the electrodes are provided at intervals so that there is an area that does not overlap with the adjacent electrodes. If a dummy electrode that is electrically insulated from the two adjacent electrodes 592 is provided between them, This is preferable because the area of ​​the region with different transmittance can be reduced.

[0195] The touch sensor 595 includes a substrate 590, electrodes 591 arranged in a staggered pattern on the substrate 590, and The insulating layer 593 covers the electrodes 591 and 592, and the adjacent electrodes 591 and 592. The wiring 594 electrically connects the

[0196] The adhesive layer 597 is formed on the substrate 590 so that the touch sensor 595 overlaps the display unit 501. It is pasted onto board 570.

[0197] The electrode 591 and the electrode 592 are formed using a light-transmitting conductive material. The conductive materials that can be used are indium oxide, indium tin oxide, and indium zinc oxide. , zinc oxide, zinc oxide doped with gallium, or other conductive oxides, or graphene. It is possible.

[0198] After forming a film of a light-transmitting conductive material on a substrate 590 by a sputtering method, By using various patterning techniques such as lithography, unnecessary parts are removed and the electrodes 59 are formed. 1 and the electrode 592 can be formed. Graphene can be obtained by a CVD method or by graphene oxide. Alternatively, the film may be formed by applying a solution in which the fluorine is dispersed and then reducing the solution.

[0199] The material used for the insulating layer 593 is, for example, a resin such as acrylic or epoxy. In addition to resins with siloxane bonds, silicon oxide, silicon oxynitride, and aluminum oxide It is also possible to use inorganic insulating materials such as the above.

[0200] An opening reaching the electrode 591 is provided in the insulating layer 593, and a wiring 594 is connected to the adjacent electrode 591 is electrically connected. The transparent conductive material increases the aperture ratio of the touch panel. Therefore, the electrode 591 and the electrode 59 can be suitably used for the wiring 594. A material having a higher electrical conductivity than 2 can be preferably used for the wiring 594 because it can reduce electrical resistance. can.

[0201] One electrode 592 extends in one direction, and multiple electrodes 592 are provided in a stripe pattern. .

[0202] The wiring 594 is provided so as to intersect with the electrodes 592 .

[0203] A pair of electrodes 591 are provided with one electrode 592 sandwiched therebetween, and wiring 594 is connected to the pair of electrodes 591 are electrically connected.

[0204] The multiple electrodes 591 do not necessarily have to be arranged in a direction perpendicular to one electrode 592. However, the angle between the first and second electrodes may be less than 90 degrees.

[0205] One of the wirings 598 is electrically connected to the electrode 591 or the electrode 592. The wiring 598 is made of, for example, aluminum, gold, platinum, silver, etc. , nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or para For example, a metal material such as zinc or an alloy material containing such a metal material can be used.

[0206] An insulating layer is provided to cover the insulating layer 593 and the wiring 594 to protect the touch sensor 595. It is possible.

[0207] Furthermore, the connection layer 599 electrically connects the wiring 598 and the FPC 509(2).

[0208] The connection layer 599 is an anisotropic conductive film (ACF). Conductive Film) and Anisotropic Conductive Paste (ACP) c Conductive Paste) can be used.

[0209] The adhesive layer 597 is transparent. For example, a thermosetting resin or an ultraviolet curing resin may be used. Specifically, the resin may have an acrylic, urethane, epoxy, or siloxane bond. Resins such as resins can be used.

[0210] <Display section> The display unit 501 includes a plurality of pixels arranged in a matrix. The pixel circuit drives the display element.

[0211] In this embodiment, a white organic electroluminescence element is applied to a display element. The display element is not limited to this. For example, a red organic electroluminescent element and a blue organic electroluminescent element are used. A green organic electroluminescence element and a green organic electroluminescence element may be used. stomach.

[0212] For example, display elements include organic electroluminescence elements, electrophoretic elements, and Display elements that display images using a liquid crystal display method (also called electronic ink), shutter-type Various display elements can be used, such as MEMS display elements and optical interference type MEMS display elements. In addition, a suitable configuration for the display element to be applied can be selected from various pixel circuits. This can be done.

[0213] The substrate 510 is a flexible substrate 510b, which prevents unintended diffusion of impurities into the light emitting element. A barrier film 510a for preventing the formation of a barrier layer 510a and an adhesive layer 51 for bonding the barrier film 510a to the substrate 510b. 0c is a laminated body.

[0214] The substrate 570 is a flexible substrate 570b, which prevents unintended diffusion of impurities into the light emitting element. and an adhesive layer 57 that bonds the barrier film 570a to the substrate 570b. It is a laminate of 0c.

[0215] The sealing material 560 bonds the substrate 570 and the substrate 510 together. In addition, when light is extracted to the sealing material 560 side, the sealing material 560 is The pixel circuit and the light emitting element (for example, the light emitting element 550R) are connected to the substrate 510. Between the substrates 570 .

[0216] 《Pixel Structure》 The pixel includes a sub-pixel 502R, which comprises a light-emitting module 580R.

[0217] The subpixel 502R can supply power to the light-emitting element 550R and the light-emitting element 550R. The light emitting module 580R includes a pixel circuit including a transistor 502t. It includes a light emitting element 550R and an optical element (eg, a color layer 567R).

[0218] The light-emitting element 550R includes a lower electrode, an upper electrode, and a light-emitting organic compound between the lower electrode and the upper electrode. The layer includes a compound.

[0219] The light emitting module 580R has a colored layer 567R in the direction in which light is extracted. Any material that transmits light having a certain wavelength may be used, for example, red, green, or blue. In addition, in other sub-pixels, a light-emitting element that selectively transmits light can be used. A region that transmits the light emitted by the element may be provided.

[0220] In addition, when the sealing material 560 is provided on the side from which light is extracted, the sealing material 560 The child 550R contacts the colored layer 567R.

[0221] The colored layer 567R is located so as to overlap the light emitting element 550R. A part of the light emitted by R passes through the colored layer 567R and reaches the light emitting module in the direction of the arrow shown in the figure. It is ejected from the exterior of the 580R.

[0222] Display Configuration The display unit 501 has a light-shielding layer 567BM in the light-emitting direction. , are provided so as to surround a colored layer (for example, the colored layer 567R).

[0223] The display unit 501 includes an anti-reflection layer 567p at a position overlapping the pixel. For example, a circular polarizing plate can be used as p.

[0224] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. The insulating film 521 is used as a layer for flattening unevenness caused by the pixel circuit. In addition, a laminated film including a layer capable of suppressing the diffusion of impurities can be applied to the insulating film 521. This can prevent the transistor 502t etc. from being damaged by unexpected diffusion of impurities. This can suppress the deterioration of reliability.

[0225] The display unit 501 has a light-emitting element (eg, a light-emitting element 550R) on an insulating film 521.

[0226] The display unit 501 has a partition wall 528 on an insulating film 521, the partition wall 528 overlapping an end of the lower electrode. A spacer for controlling the distance between the substrate 510 and the substrate 570 is provided on the partition wall 528 .

[0227] Configuration of the Scanning Line Driving Circuit The scanning line driver circuit 503g(1) includes a transistor 503t and a capacitor 503c. Note that the driver circuit and the pixel circuit can be formed over the same substrate in the same process.

[0228] Other configurations The display unit 501 includes a wiring 511 capable of supplying a signal, and a terminal 519 is connected to the wiring 511. 11. In addition, signals such as image signals and synchronization signals can be supplied. The FPC 509 ( 1 ) is electrically connected to the terminal 519 .

[0229] In addition, a printed wiring board (PWB) may be attached to the FPC509(1). stomach.

[0230] <Display section modification example 1> Various transistors can be used for the display portion 501 .

[0231] A configuration in which a bottom gate type transistor is applied to the display portion 501 is shown in FIG. and is illustrated in FIG.

[0232] For example, a semiconductor layer including an oxide semiconductor, amorphous silicon, or the like is formed as shown in FIG. This can be applied to the transistor 502t and the transistor 503t shown.

[0233] For example, a semiconductor layer containing polycrystalline silicon or the like is formed into a transistor 5 shown in FIG. 02t and transistor 503t.

[0234] A configuration in which a top-gate type transistor is applied to the display portion 501 is shown in FIG. As illustrated in the figure.

[0235] For example, a semiconductor layer including polycrystalline silicon or a transferred single crystal silicon film is formed as shown in FIG. This can be applied to the transistor 502t and the transistor 503t shown in FIG. can.

[0236] This embodiment may be modified, added, revised, deleted, or altered in whole or in part with respect to other embodiments. This corresponds to an application, a superordinate concept, or a subordinate concept. Any part or all of the present invention may be freely combined with any part or all of the other embodiments, or may be used as appropriate. It can be used or substituted.

[0237] (Embodiment 7) In this embodiment, a foldable LCD panel that can be used for an electronic device according to one embodiment of the present invention will be described. The configuration of the touch panel will be described with reference to FIG.

[0238] FIG. 30 is a cross-sectional view of touch panel 500B.

[0239] The touch panel 500B described in this embodiment converts supplied image information into transistors. The display unit 501 that displays on the side where the touch sensor is provided is provided. The difference from the touch panel 500 described in the sixth embodiment is that the touch panel 500 is provided on the plate 510 side. Here, the different configurations are described in detail, and where similar configurations can be used, , the above explanation is incorporated herein by reference.

[0240] <Display section> The display unit 501 includes a plurality of pixels arranged in a matrix. The pixel circuit drives the display element.

[0241] 《Pixel Structure》 The pixel includes a sub-pixel 502R, which comprises a light-emitting module 580R.

[0242] The subpixel 502R can supply power to the light-emitting element 550R and the light-emitting element 550R. The pixel circuit includes a transistor 502t.

[0243] The light emitting module 580R includes a light emitting element 550R and an optical element (e.g., a color layer 567R). Equipped with.

[0244] The light-emitting element 550R includes a lower electrode, an upper electrode, and a light-emitting organic compound between the lower electrode and the upper electrode. The layer includes a compound.

[0245] The light emitting module 580R has a colored layer 567R in the direction in which light is extracted. Any material that transmits light having a certain wavelength may be used, for example, red, green, or blue. In addition, in other sub-pixels, a light-emitting element that selectively transmits light can be used. A region that transmits the light emitted by the element may be provided.

[0246] The colored layer 567R is located so as to overlap the light emitting element 550R. The optical element 550R emits light toward the side where the transistor 502t is provided. A part of the light emitted by the light emitting element 550R is transmitted through the colored layer 567R and is reflected by the arrows in the figure. The light is emitted to the outside of the light emitting module 580R in the direction of the arrow.

[0247] Display Configuration The display unit 501 has a light-shielding layer 567BM in the light-emitting direction. , are provided so as to surround a colored layer (for example, the colored layer 567R).

[0248] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. The insulating film 521 is used as a layer for flattening unevenness caused by the pixel circuit. In addition, a laminated film including a layer capable of suppressing the diffusion of impurities can be applied to the insulating film 521. This can be used to prevent unexpected impurities from diffusing from the colored layer 567R, for example. This can suppress a decrease in reliability of the transistors 502t and the like.

[0249] <Touch sensor> The touch sensor 595 is provided on the substrate 510 side of the display unit 501 (FIG. 30(A)). reference).

[0250] The adhesive layer 597 is between the substrate 510 and the substrate 590, and the display unit 501 and the touch sensor 5 Paste 95 together.

[0251] <Display section modification example 1> Various transistors can be used for the display portion 501 .

[0252] A configuration in which a bottom gate type transistor is applied to the display portion 501 is shown in FIG. and is illustrated in FIG.

[0253] For example, a semiconductor layer including an oxide semiconductor, amorphous silicon, or the like is formed as shown in FIG. This can be applied to the transistor 502t and the transistor 503t shown.

[0254] For example, a semiconductor layer containing polycrystalline silicon or the like is formed into a transistor 5 shown in FIG. 02t and transistor 503t.

[0255] A configuration in which a top-gate type transistor is applied to the display portion 501 is shown in FIG. As illustrated in the figure.

[0256] For example, a semiconductor layer including polycrystalline silicon or a transferred single crystal silicon film is formed as shown in FIG. 0(C) can be applied to the transistor 502t and the transistor 503t shown in FIG. can.

[0257] This embodiment may be modified, added, revised, deleted, or altered in whole or in part with respect to other embodiments. This corresponds to an application, a superordinate concept, or a subordinate concept. Any part or all of the present invention may be freely combined with any part or all of the other embodiments, or may be used as appropriate. It can be used or substituted.

[0258] (Embodiment 8) In this embodiment, a semiconductor layer of a semiconductor device that can be used for a display panel of one embodiment of the present invention An oxide semiconductor that can be suitably used will be described.

[0259] Oxide semiconductors have a large energy gap of 3.0 eV or more, making them suitable for The oxide semiconductor film obtained by processing the oxide semiconductor film under suitable conditions and sufficiently reducing the carrier density is applied. In a transistor with a low resistance, the leakage current between the source and drain in the off state (off current) can be made extremely low compared to conventional silicon-based transistors. .

[0260] The applicable oxide semiconductors include at least indium (In) or zinc (Zn It is particularly preferable that the oxide semiconductor contains In and Zn. As a stabilizer to reduce the variation in the electrical characteristics of transistors using In addition to gallium (Ga), tin (Sn), hafnium (Hf), and zirconium (Zr) , titanium (Ti), scandium (Sc), yttrium (Y), lanthanides (e.g. , cerium (Ce), neodymium (Nd), gadolinium (Gd), or It is preferable that one or more kinds of the amine compound are contained.

[0261] For example, oxide semiconductors include indium oxide, tin oxide, zinc oxide, and In-Zn oxide. compounds, Sn-Zn oxides, Al-Zn oxides, Zn-Mg oxides, Sn-Mg acids oxides, In-Mg oxides, In-Ga oxides, In-Ga-Zn oxides (IGZO (also written as In-Al-Zn oxide, In-Sn-Zn oxide, Sn-Ga- Zn-based oxide, Al-Ga-Zn-based oxide, Sn-Al-Zn-based oxide, In-Hf-Z n-based oxides, In-Zr-Zn-based oxides, In-Ti-Zn-based oxides, In-Sc-Zn In-Y-Zn oxide, In-La-Zn oxide, In-Ce-Zn oxide oxides, In-Pr-Zn oxides, In-Nd-Zn oxides, In-Sm-Zn oxides In-Eu-Zn oxide, In-Gd-Zn oxide, In-Tb-Zn oxide , In-Dy-Zn oxide, In-Ho-Zn oxide, In-Er-Zn oxide, In-Tm-Zn oxide, In-Yb-Zn oxide, In-Lu-Zn ​​oxide, I n-Sn-Ga-Zn oxide, In-Hf-Ga-Zn oxide, In-Al-Ga- Zn-based oxide, In-Sn-Al-Zn-based oxide, In-Sn-Hf-Zn-based oxide, I An n-Hf-Al-Zn oxide can be used.

[0262] Here, the In-Ga-Zn oxide is an oxide having In, Ga, and Zn as the main components. The ratio of In, Ga, and Zn does not matter. The metal elements may be included.

[0263] In addition, as an oxide semiconductor, InMO3(ZnO) m (m>0 and m is not an integer In addition, M is selected from Ga, Fe, Mn, and Co. A metal element or elements, or the above-mentioned stabilizer elements. In addition, as an oxide semiconductor, In2SnO5(ZnO) n (n>0 and n is an integer) Materials represented by the formula:

[0264] For example, In:Ga:Zn=1:1:1, In:Ga:Zn=1:3:2, In:Ga :Zn=1:3:4, In:Ga:Zn=1:3:6, In:Ga:Zn=3:1:2A Or, In-Ga-Zn oxide with an atomic ratio of In:Ga:Zn=2:1:3 and its composition It is preferable to use an oxide in the vicinity of the above.

[0265] When a large amount of hydrogen is contained in the oxide semiconductor film, the hydrogen is bonded to the oxide semiconductor. Some of the elements become donors and generate electrons, which are carriers. This causes a transistor Therefore, the threshold voltage of the oxide semiconductor film is shifted in the negative direction. After that, dehydration treatment (dehydrogenation treatment) is performed to remove hydrogen or moisture from the oxide semiconductor film. It is preferable to remove the impurities to obtain a high purity so that the impurities are not included as much as possible.

[0266] Note that the oxide semiconductor film is dehydrated (dehydrogenated) to At the same time, oxygen may also decrease. A process of adding oxygen to an oxide semiconductor film to compensate for oxygen vacancies increased by a thermal oxidation process. In this specification and the like, when oxygen is supplied to an oxide semiconductor film, This may be referred to as oxygen addition treatment, or oxygen contained in the oxide semiconductor film may be added to the oxide semiconductor film to obtain a stoichiometric composition. When the oxygen concentration is more than 100%, it is sometimes referred to as hyperoxygenation treatment.

[0267] In this manner, the oxide semiconductor film is dehydrated by dehydration treatment (dehydrogenation treatment). By removing oxygen and filling the oxygen vacancies with oxygen addition treatment, the i-type (intrinsic) or The oxide semiconductor film can be an oxide semiconductor film that is nearly i-type and is substantially i-type (intrinsic). Note that the term "substantially intrinsic" means that the number of carriers derived from donors in the oxide semiconductor film is extremely small. (close to zero), carrier density is 1×10 17 / cm 3 Below, 1×10 16 / cm 3 below , 1×10 15 / cm 3 Below, 1×10 14 / cm 3 Below, 1×10 13 / cm 3 below, Particularly preferably 8 × 10 11 / cm 3 Less than 1×10, more preferably 11 / cm 3 below , and more preferably 1×10 10 / cm 3 is less than or equal to 1 x 10 -9 / cm 3 That's all. This means that...

[0268] In addition, a transistor including an i-type or substantially i-type oxide semiconductor film can be For example, a transistor using an oxide semiconductor film can be The drain current when the capacitor is off is 1×10 -18 Below A, Preferably 1 x 10 -21 A or less, more preferably 1×10 -24 A or below, or 85 1×10 at °C -15A or less, preferably 1×10 -18 A or less, more preferably 1x 10 -21 A or less. Note that the off state of a transistor is an n-channel In the case of a transistor of this type, this refers to a state in which the gate voltage is sufficiently smaller than the threshold voltage. In general, if the gate voltage is 1V, 2V, or 3V less than the threshold voltage, The transistor is turned off. The voltage is, for example, 1V, 5V, or 10V.

[0269] The structure of the oxide semiconductor film will be described below.

[0270] Oxide semiconductor films are roughly classified into non-single-crystal oxide semiconductor films and single-crystal oxide semiconductor films. The non-single-crystal oxide semiconductor film is called CAAC-OS (C Axis Aligned Crystal-Oxide Semiconductor Film). (stalline oxide semiconductor) film, polycrystalline oxide semiconductor The oxide semiconductor film includes a film, a microcrystalline oxide semiconductor film, an amorphous oxide semiconductor film, and the like.

[0271] First, we will explain the CAAC-OS membrane. These are called oxide semiconductors with axially aligned nanocrystals. It is also possible.

[0272] The CAAC-OS film is one of the oxide semiconductor films that has multiple crystal parts aligned along the c-axis. .

[0273] The CAAC-OS film was observed under a transmission electron microscope (TEM). When observed using a quartz crystal microscope, clear boundaries between crystal parts were observed, i.e. It is not possible to confirm the grain boundary. It can be said that the AAC-OS film is less susceptible to the decrease in electron mobility caused by grain boundaries.

[0274] The CAAC-OS film was observed by TEM from a direction roughly parallel to the sample surface (cross-sectional TEM observation). When the metal atoms are observed, it can be confirmed that they are arranged in layers in the crystal part. Each layer of the CAAC-OS film is formed on a surface on which the film is to be formed (also called a surface on which the film is to be formed) or on a concave surface on the upper surface. The shape reflects a convexity, and is aligned parallel to the surface on which the CAAC-OS film is formed or the upper surface.

[0275] On the other hand, the CAAC-OS film was observed by TEM from a direction roughly perpendicular to the sample surface (plane T EM observation reveals that metal atoms are arranged in triangular or hexagonal shapes in the crystals. However, no regularity was observed in the arrangement of metal atoms between different crystal regions. do not have.

[0276] FIG. 31(a) is a cross-sectional TEM image of the CAAC-OS film. This is a cross-sectional TEM image of 31(a) enlarged, with the atomic arrangement emphasized for ease of understanding. The tone is displayed.

[0277] Figure 31(c) shows the area surrounded by a circle (diameter approximately 4 mm) between AO and A' in Figure 31(a). From Fig. 31(c), it is clear that the c-axis orientation is In addition, the c-axis orientation is different between the A-O and O-A' sections, so the different graphs are formed. The c-axis angles between the AOs are 14.3° and 16. 6°, 26.4°, and so on. Similarly, OA Between these, the c-axis angle gradually changes to -18.3°, -17.6°, and -15.9°. It is clear that things are changing.

[0278] In addition, when electron diffraction is performed on the CAAC-OS film, spots (bright points) indicating orientation are observed. For example, a thickness of 1 nm to 30 nm is observed on the top surface of the CAAC-OS film. When electron diffraction using an electron beam (also called nanobeam electron diffraction) is performed, spots are observed. (See Figure 32(A)).

[0279] Cross-sectional and planar TEM observations revealed that the crystals in the CAAC-OS film had an orientation. It can be seen that...

[0280] Most of the crystals in the CAAC-OS film are cubic with a side length of less than 100 nm. The size is small enough to fit inside the body. Therefore, the crystal part in the CAAC-OS film has a side length of 10 This includes sizes that fit within a cube of less than 3 nm, 5 nm, or 5 nm. However, multiple crystals in the CAAC-OS film are connected to form a single large crystal domain. For example, in a planar TEM image, 2 More than 5μm 2 More than or equal to 1000μm 2 In some cases, crystal regions having more than this amount may be observed.

[0281] X-ray diffraction (XRD) of CAAC-OS film When the structure was analyzed using the device, for example, CAAC-OS with InGaZnO4 crystals was In the out-of-plane analysis of the film, the diffraction angle (2θ) peaked at around 31°. This peak is attributed to the (009) plane of the InGaZnO4 crystal. Therefore, the crystals of the CAAC-OS film have a c-axis orientation, and the c-axis faces the surface on which the film is formed or the upper surface. It can be seen that it is oriented in a roughly vertical direction.

[0282] On the other hand, in-p X-rays are incident on the CAAC-OS film from a direction approximately perpendicular to the c-axis. In the lane method, a peak may appear at 2θ around 56°. is attributed to the (110) plane of the InGaZnO4 crystal. In the case of a nitride semiconductor film, 2θ is fixed at around 56°, and the normal vector of the sample surface is the axis (φ axis). When the sample is rotated and analyzed (φ scan), a crystal plane equivalent to the (110) plane is detected. In contrast, in the case of the CAAC-OS film, six peaks are observed, which are assigned to Even when φ is fixed at around 56° and scanned, no clear peak appears.

[0283] From the above, it is considered that the orientation of the a-axis and b-axis is uniform between different crystal regions in the CAAC-OS film. Although it is irregular, it has a c-axis orientation, and the c-axis is parallel to the normal vector of the surface on which it is formed or the upper surface. Therefore, the layered structure confirmed by the cross-sectional TEM observation mentioned above is consistent with the Each layer of arranged metal atoms is in a plane parallel to the ab plane of the crystal.

[0284] The crystalline part is formed when the CAAC-OS film is formed or after a crystallization process such as a heat treatment. As described above, the c-axis of the crystal is aligned to the surface on which the CAAC-OS film is to be formed. For example, in the CAAC-OS film, When the shape is changed by etching, the c-axis of the crystal is aligned with the CAAC-OS film. It may not be parallel to the face or top surface normal vector.

[0285] In addition, the distribution of the c-axis oriented crystal parts in the CAAC-OS film may not be uniform. For example, the crystals in the CAAC-OS film grow from the top surface of the CAAC-OS film. Therefore, when the crystal is formed, the region near the top surface has more c-axis oriented crystals than the region near the surface on which the crystal is formed. The proportion of the impurity part may be increased. The region where the ZnO was added was altered, and regions with different proportions of c-axis oriented crystals were formed. This may also occur.

[0286] In addition, the out-of-plane crystal structure of the CAAC-OS film with InGaZnO4 crystals In the analysis by the method, in addition to the peak at 2θ near 31°, a peak also appeared at 2θ near 36°. The peak at 2θ of around 36° may be due to the c-axis orientation in some parts of the CAAC-OS film. The CAAC-OS film contains crystals that do not have the 2θ value of about 31°. It is preferable that the spectrum shows a peak at 2θ of about 36° and does not show a peak at 2θ of about 36°.

[0287] The CAAC-OS film is an oxide semiconductor film with a low concentration of impurities. The oxide semiconductor film is preferably made of silicon or a transition metal element other than the main component of the oxide semiconductor film. The elements that bond to oxygen stronger than the metal elements that form the oxide semiconductor film, such as Zn, By removing oxygen from the oxide semiconductor film, the atomic arrangement of the oxide semiconductor film is disturbed, and the crystallinity is reduced. In addition, heavy metals such as iron and nickel, argon, and carbon dioxide are Since the diameter (or molecular radius) of the ions is large, when the ions are contained inside the oxide semiconductor film, the oxide semiconductor film The impurities contained in the oxide semiconductor film are disturbed, which causes a decrease in crystallinity. Pure materials may act as carrier traps or carrier generation sources.

[0288] The CAAC-OS film is an oxide semiconductor film with a low density of defect states. Oxygen vacancies in semiconductor films act as carrier traps and trap hydrogen. This can become a carrier generation source.

[0289] The low impurity concentration and low defect level density (low oxygen vacancies) are called high purity intrinsic or The term "high-purity intrinsic" refers to a substantially high-purity intrinsic oxide semiconductor. Since the film has a small carrier generation source, the carrier density can be reduced. The transistor using the oxide semiconductor film has electrical characteristics (noise) in which the threshold voltage is negative. It is also called "marine". It is rare for it to become "high purity genuine" or "substantially high purity". The intrinsic oxide semiconductor film has few carrier traps. Transistors using the film have little fluctuation in electrical characteristics and are highly reliable. Note that it takes a certain time for charges trapped in the carrier traps in the oxide semiconductor film to be released. The time is long and the charge may behave as if it were a fixed charge. In addition, a transistor using an oxide semiconductor film having a high density of defect states has unstable electrical characteristics. There may be cases where this occurs.

[0290] In addition, the electrical characteristics of transistors using CAAC-OS films are improved by irradiation with visible light or ultraviolet light. Gender variation is small.

[0291] Next, a microcrystalline oxide semiconductor film will be described.

[0292] In the TEM image of the microcrystalline oxide semiconductor film, crystal parts can be clearly seen. The crystal parts contained in the microcrystalline oxide semiconductor film may have a size of 1 nm or more and 100 nm or more. In particular, the size of the particles is between 1 nm and 10 nm. Nanocrystals (nc) are microcrystals with a diameter of 1 to 3 nm or less. The oxide semiconductor film having nc-OS (nanocrystalline O The nc-OS film is called a T In some cases, the grain boundaries cannot be clearly identified in the EM images. , oxidation with RANC (Random Aligned nanocrystals) Semiconductors or NANC (Non-Aligned nanocrystals) In other words, the oxide semiconductor has a conductivity of 1000.

[0293] The nc-OS film is a microscopic region (e.g., a region of 1 nm to 10 nm, especially a region of 1 nm or less). The nc-OS film has a periodic atomic arrangement in the region of 3 nm or less. There is no regularity in the crystal orientation between the crystal parts, and therefore no orientation is observed throughout the film. Therefore, the nc-OS film cannot be distinguished from an amorphous oxide semiconductor film depending on the analysis method. For example, XRD, which uses X-rays with a diameter larger than that of the crystal part, is used for nc-OS films. When structural analysis is performed using the out-of-plane method, the crystal planes are In addition, the peaks shown in the figure are not detected in the nc-OS film because the probe diameter is larger than that in the crystalline region. Electron diffraction (also called selected area electron diffraction) is performed using an electron beam (e.g., 50 nm or larger). On the other hand, for the nc-OS film, Nanobeam electron circuit using an electron beam with a probe diameter close to or smaller than the size of the crystal part. In addition, nanobeam electron diffraction was performed on the nc-OS film. When the image is taken, a circular (ring-shaped) area of ​​high brightness may be observed. When nanobeam electron diffraction was performed on the c-OS film, multiple spots were observed within the ring-shaped region. In some cases, it may be measured (see FIG. 32(B)).

[0294] The nc-OS film is an oxide semiconductor film that has higher order than an amorphous oxide semiconductor film. Therefore, the nc-OS film has a lower density of defect states than the amorphous oxide semiconductor film. In the nc-OS film, the crystal orientation is not regular between different crystal parts. The OS film has a higher density of defect states than the CAAC-OS film.

[0295] The oxide semiconductor film may be, for example, an amorphous oxide semiconductor film, a microcrystalline oxide semiconductor film, or a C The AAC-OS film may be a laminate film having two or more kinds of AAC-OS films.

[0296] When an oxide semiconductor film has multiple structures, the structures can be resolved by using nanobeam electron diffraction. In some cases, analysis may be possible.

[0297] FIG. 32C shows the electron gun chamber 10, the optical system 12 below the electron gun chamber 10, and the optical system 12 below the optical system 12. a sample chamber 14, an optical system 16 below the sample chamber 14, an observation chamber 20 below the optical system 16, and an observation A transillumination system having a camera 18 installed in a chamber 20 and a film chamber 22 below the observation chamber 20. The figure shows a device for measuring electron diffraction. The camera 18 is installed facing the inside of the observation chamber 20. The room chamber 22 may not be provided.

[0298] FIG. 32(D) shows the internal structure of the transmission electron diffraction measurement device shown in FIG. 32(C). Inside the transmission electron diffraction measurement device, electrons emitted from an electron gun installed in the electron gun chamber 10 is irradiated onto a substance 28 placed in the sample chamber 14 via the optical system 12. The electrons are incident on a fluorescent screen 32 installed inside the observation chamber 20 via the optical system 16. On the light plate 32, a pattern appears according to the intensity of the incident electrons, which is called a transmission electron diffraction pattern. It is possible to measure the

[0299] The camera 18 is installed facing the fluorescent screen 32 and captures the pattern appearing on the fluorescent screen 32. It is possible to capture an image of the object by a straight line passing through the center of the lens of the camera 18 and the center of the fluorescent screen 32. The angle between the line and the upper surface of the fluorescent screen 32 is, for example, 15° to 80°, or 30° to 40°. The smaller the angle, the more accurate the image captured by the camera 18. However, if the angle is known in advance, the resulting transmission electron diffraction pattern will be significantly distorted. If the TEM image is obtained, it is possible to correct the distortion of the transmission electron diffraction pattern. In some cases, the camera 18 may be placed in the film chamber 22. The fluorescent screen may be installed in the room chamber 22 so as to face the direction of incidence of the electrons 24. It is possible to capture a transmission electron diffraction pattern with little distortion from the back surface of the sample.

[0300] A holder for fixing a substance 28, which is a sample, is installed in the sample chamber 14. The holder is structured to be transparent to electrons passing through the material 28. The holder may have a function of moving the holder 28 in the X-axis, Y-axis, Z-axis, etc. For example, 1 nm or more and 10 nm or less, 5 nm or more and 50 nm or less, 10 nm or more and 100 nm or less m or less, 50 nm to 500 nm, 100 nm to 1 μm, etc. These ranges can be set optimally depending on the structure of the substance28. That's good.

[0301] Next, the transmission electron diffraction pattern of the material is measured using the above-mentioned transmission electron diffraction measurement device. This article explains how to do this.

[0302] For example, as shown in FIG. 32(D), the irradiation position of the electron 24, which is a nanobeam, in the material By changing (scanning) the temperature, it is possible to observe how the structure of a substance changes. In this case, if the substance 28 is a CAAC-OS film, the following can be obtained: If the material 28 is an nc-OS film, the diffraction pattern is shown in Figure 32(B). The diffraction pattern shown is observed.

[0303] By the way, even if material 28 is a CAAC-OS film, it may be partially composed of nc-OS film, etc. Therefore, the quality of the CAAC-OS film can be judged by the following: , the ratio of the area where the diffraction pattern of the CAAC-OS film is observed in a certain range (CAA For example, in a high-quality CAAC-OS film, If present, the CAAC ratio is 50% or more, preferably 80% or more, and more preferably 90% or more. The diffraction pattern is different from that of the CAAC-OS film. The percentage of areas where CAAC is observed is denoted as the non-CAAC rate.

[0304] As an example, the film is formed immediately after (denoted as-sputtered) or in an atmosphere containing oxygen. The top surface of each sample with CAAC-OS film after the heat treatment at 450 °C in air was scanned. Transmission electron diffraction patterns were obtained while scanning the sample at a speed of 5 nm / s for 60 s. The diffraction pattern was observed while scanning, and the observed diffraction pattern was captured as still images every 0.5 seconds. The CAAC rate was calculated by converting the electron beam into the A nano-beam of 1.5 m was used. The same measurements were performed on six samples. The rate was calculated using the average value of six samples.

[0305] The CAAC ratio in each sample is shown in FIG. The AAC ratio was 75.7% (non-CAAC ratio was 24.3%). The CAAC content of the treated CAAC-OS membrane was 85.3% (non-CAAC content was 14.7%). It can be seen that the CAAC conversion rate is higher after heat treatment at 450°C than immediately after film formation. That is, the non-CAAC ratio is reduced by heat treatment at a high temperature (e.g., 400°C or higher). In addition, the CAAC content is increased when the temperature is heated below 500°C. It can be seen that a CAAC-OS membrane with a high CAAC content can be obtained even with

[0306] Here, most of the diffraction patterns different from those of the CAAC-OS film are similar to those of the nc-OS film. The pattern was a folded pattern. In addition, the amorphous oxide semiconductor film was not observed in the measurement area. Therefore, the heat treatment could not produce a region with a structure similar to that of the nc-OS film. However, it is suggested that the structure of the neighboring domains influences the rearrangement of the CAAC domain. .

[0307] 33(B) and 33(C) show the CAAC- 33(B) and 33(C) are planar TEM images of the OS film. It can be seen that the CAAC-OS film after the 50°C heat treatment has a more homogeneous film quality. It can be seen that the film quality of the CAAC-OS film is improved by the heat treatment at a low temperature.

[0308] Using this measurement method, it is possible to analyze the structure of oxide semiconductor films with multiple structures. This may be the case.

[0309] The CAAC-OS film can be formed, for example, by the following method.

[0310] The CAAC-OS film can be formed, for example, by sputtering a polycrystalline oxide semiconductor target. The film is formed by sputtering.

[0311] By increasing the substrate temperature during film formation, migration of sputtered particles after reaching the substrate is suppressed. Specifically, the substrate temperature is set to 100° C. or higher and 740° C. or lower, preferably 200° C. or lower. The film is formed at a temperature of 500°C or less. By increasing the substrate temperature during film formation, the sputtering particles When the sputtered particles reach the substrate, they migrate onto the substrate, causing the particles to flatten. At this time, the sputtering particles are positively charged, so the The ring particles repel each other while adhering to the substrate, so the sputtering particles are biased and non-uniform. Therefore, a CAAC-OS film having a uniform thickness can be formed without overlapping.

[0312] By reducing the amount of impurities mixed in during film formation, it is possible to prevent the crystal state from being destroyed by impurities. For example, the concentration of impurities (hydrogen, water, carbon dioxide, nitrogen, etc.) present in the film formation chamber can be In addition, the impurity concentration in the deposition gas may be reduced. A deposition gas having a temperature of -80°C or lower, preferably -100°C or lower, is used.

[0313] In addition, by increasing the oxygen ratio in the deposition gas and optimizing the power, plasma damage during deposition is reduced. The oxygen ratio in the deposition gas is preferably 30% by volume or more, and more preferably 100% by volume or more. Expressed as volume percent.

[0314] Alternatively, the CAAC-OS film is formed by the following method.

[0315] First, a first oxide semiconductor film is formed to a thickness of 1 nm or more and less than 10 nm. The semiconductor film is formed by sputtering. Specifically, the substrate temperature is set to 100°C or higher. The temperature is set to 500° C. or less, preferably 150° C. to 450° C., and the oxygen ratio in the deposition gas is set to 30 % by volume or more, preferably 100% by volume.

[0316] Next, heat treatment is performed to convert the first oxide semiconductor film into a first CAAC-OS film having high crystallinity. The temperature of the heat treatment is 350°C or higher and 740°C or lower, preferably 450°C or higher and 650°C or lower. The heat treatment time is from 1 minute to 24 hours, preferably from 6 minutes to 4 hours. The heat treatment may be performed in an inert atmosphere or an oxidizing atmosphere. Alternatively, heat treatment is performed in an inert atmosphere, and then heat treatment is performed in an oxidizing atmosphere. By the heat treatment in the atmosphere, the impurity concentration of the first oxide semiconductor film can be reduced in a short time. On the other hand, oxygen vacancies are generated in the first oxide semiconductor film by heat treatment in an inert atmosphere. In this case, the oxygen deficiency can be reduced by heat treatment in an oxidizing atmosphere. Heat treatment can be performed at 1000 Pa or less, 100 Pa or less, 10 Pa or less, or The step of removing the oxide semiconductor film from the first oxide semiconductor film may be performed under a reduced pressure of 1 Pa or less. can be reduced in an even shorter time.

[0317] The first oxide semiconductor film has a thickness of 1 nm or more and less than 10 nm. Compared with a thickness of 0 nm or more, it can be easily crystallized by heat treatment.

[0318] Next, a second oxide semiconductor film having the same composition as the first oxide semiconductor film is formed to a thickness of 10 nm or more. The second oxide semiconductor film is formed to a thickness of 0 nm or less by a sputtering method. Specifically, the substrate temperature is set to 100° C. or higher and 500° C. or lower, preferably 150° C. or higher and 450° C. or lower. The oxygen ratio in the deposition gas is set to 30% by volume or more, preferably 100% by volume. To film.

[0319] Next, heat treatment is performed to form a second oxide semiconductor film from the first CAAC-OS film by solid phase growth. The second CAAC-OS film is formed with high crystallinity by the heat treatment at a temperature of 350 The temperature is from 450°C to 650°C, preferably from 450°C to 650°C. The heating time is from 1 minute to 24 hours, preferably from 6 minutes to 4 hours. The heat treatment may be performed in an inert atmosphere or an oxidizing atmosphere. Preferably, the heat treatment is performed in an inert atmosphere. After that, a heat treatment is performed in an oxidizing atmosphere. The impurity concentration of the nitride semiconductor film can be reduced in a short time. Oxygen vacancies may be generated in the second oxide semiconductor film by the heat treatment. The oxygen vacancies can be reduced by heat treatment in a reactive atmosphere. The pressure may be reduced to 000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration in the second oxide semiconductor film can be reduced in a shorter time. Cut.

[0320] In this manner, a CAAC-OS film having a total thickness of 10 nm or more is formed. can be done.

[0321] This embodiment may be modified, added, revised, deleted, or altered in whole or in part with respect to other embodiments. This corresponds to an application, a superordinate concept, or a subordinate concept. Any part or all of the present invention may be freely combined with any part or all of the other embodiments, or may be used as appropriate. It can be used or substituted.

[0322] (Embodiment 9) In other embodiments, various examples are shown. However, one aspect of the present invention is that However, the present invention is not limited to the above.

[0323] For example, in this specification, transistors of various structures are used as transistors. Therefore, there is no limitation on the type of transistor to be used. As the transistor, a transistor having single crystal silicon, or a transistor having amorphous silicon or polycrystalline silicon Con, microcrystalline (also called microcrystal, nanocrystal, semi-amorphous) silicon A transistor having a non-single crystal semiconductor film, such as a junction box, can be used. Alternatively, thin-film transistors (TFTs) made from these semiconductors can be used. There are various advantages to using TFTs. For example, it is easier to use than single crystal silicon. Since it can be manufactured at a lower temperature than conventional methods, it is possible to reduce manufacturing costs and increase the size of manufacturing equipment. Since the manufacturing equipment can be made larger, it is possible to manufacture on large substrates. Since a large number of display devices can be manufactured, the manufacturing cost can be reduced. Therefore, a substrate with low heat resistance can be used. Alternatively, a display element can be manufactured using a transistor on a light-transmitting substrate. The light transmission of the transistor can be controlled. A part of the film that forms the star can transmit light. This improves the aperture ratio. It is possible.

[0324] In addition, by using a catalyst (such as nickel) when producing polycrystalline silicon, It is possible to further improve the crystallinity and manufacture transistors with good electrical characteristics. As a result, the gate driver circuit (scanning line driver circuit), the source driver circuit (signal line driver circuit ), and signal processing circuits (signal generation circuit, gamma correction circuit, DA conversion circuit, etc.) on the board. It can be integrally formed.

[0325] In addition, when producing microcrystalline silicon, by using a catalyst (such as nickel), It is possible to further improve the crystallinity and manufacture transistors with good electrical characteristics. In this case, the crystallinity can be improved by simply applying heat treatment without laser irradiation. As a result, part of the source driver circuit (analog switch, etc.) and gate The gate driver circuit (scanning line driver circuit) can be formed integrally on the substrate. Therefore, if laser irradiation is not performed, the unevenness of the silicon crystallinity can be suppressed. Therefore, it is possible to display images with improved quality. However, the use of catalysts (such as nickel) It is possible to produce polycrystalline or microcrystalline silicon without using a SiO 2 .

[0326] In addition, improving the crystallinity of silicon to polycrystalline or microcrystalline can reduce the size of the entire panel. It is preferable to perform the process in a region other than the region of the panel, but it is not limited to this. The crystallinity of the contact may be improved. The crystallinity can be improved by selectively applying a laser beam. For example, the peripheral circuit area, which is an area other than the pixels, can be selectively irradiated. Only in the area of ​​the gate driver circuit and the source driver circuit, or only in the area of ​​the source driver circuit, Even if the laser light is irradiated only on a part of the driver circuit (for example, an analog switch), As a result, silicon crystallization is enhanced only in areas where high-speed circuit operation is required. The pixel area does not need to operate at high speed, so the crystallinity can be improved. Even if the pixel circuit is not connected to the power supply, it can still operate without any problems. Since the region in which the crystallinity needs to be improved is small, the manufacturing process can be shortened. This can improve throughput and reduce manufacturing costs. Since a small number of manufacturing devices are required, manufacturing costs can be reduced.

[0327] An example of a transistor is a compound semiconductor (e.g., SiGe, GaAs, etc.). ), or oxide semiconductors (e.g., ZnO, InGaZnO, IZO (indium zinc oxide) (Indium Tin Oxide), ITO, SnO, TiO, AlZnSnO (AZTO), A transistor having a material such as ITZO (In-Sn-Zn-O) can be used. Alternatively, these compound semiconductors or these oxide semiconductors may be thin-film transistors. This allows the manufacturing temperature to be lowered, so for example This makes it possible to manufacture transistors at room temperature. For example, a transistor can be formed directly on a plastic substrate or a film substrate. In addition, these compound semiconductors or oxide semiconductors are used for the channel portion of a transistor. For example, these compound semiconductors or The oxide semiconductor can be used as a wiring, a resistor, a pixel electrode, a light-transmitting electrode, or the like. Since these can be formed or deposited simultaneously with the transistors, the cost can be reduced. can be reduced.

[0328] An example of a transistor is a transistor formed by an ink-jet method or a printing method. These can be used for manufacturing at room temperature, low vacuum, or can be manufactured on a large substrate. Therefore, it can be manufactured without using a mask (reticle). This allows the transistor layout to be easily changed. Alternatively, it is possible to manufacture without using resist, which reduces material costs and the number of processes. Or, since it is possible to apply the film only to the necessary parts, after forming the film on the entire surface, This method wastes less material and is less costly than the conventional method of etching.

[0329] An example of a transistor is a transistor having an organic semiconductor or a carbon nanotube. This allows transistors to be mounted on a flexible substrate. It is possible to form transistors using organic semiconductors and carbon nanotubes. The device using the method can be made shock resistant.

[0330] Note that transistors having various other structures can also be used. For example, transistors include MOS transistors, junction transistors, bipolar transistors, and A MOS transistor can be used as the transistor. By using this, the size of the transistor can be reduced. It is possible to mount a bipolar transistor as a transistor. This allows a large current to flow, making it possible to operate the circuit at high speed. It is also possible to combine MOS transistors and bipolar transistors on a single substrate. This can achieve low power consumption, small size, high speed operation, etc. Yes, it is possible.

[0331] For example, in this specification, an example of a transistor is a transistor having two or more gate electrodes. A multi-gate transistor can be used. Since the channel regions are connected in series, multiple transistors are connected in series. Therefore, the multi-gate structure reduces the off-current and improves the breakdown voltage of the transistor (reliability). Or, by using a multi-gate structure, it is possible to improve the saturation region. In addition, even if the voltage between the drain and source changes, the current between the drain and source remains constant. It is possible to obtain voltage-current characteristics that do not change and have a flat slope. By utilizing the voltage-current characteristic, an ideal current source circuit or a As a result, a differential circuit or a current mirror circuit with good characteristics can be realized. It is possible to realize roads, etc.

[0332] An example of a transistor is a transistor having a structure in which gate electrodes are arranged above and below a channel. A transistor with a structure in which gate electrodes are arranged above and below the channel can be applied. By using this structure, the circuit configuration becomes like multiple transistors connected in parallel. This increases the channel area, which increases the current value. By using a structure in which gate electrodes are arranged above and below the Therefore, the S value can be improved.

[0333] In addition, as an example of a transistor, a gate electrode is disposed on a channel region. a structure in which a gate electrode is disposed under a channel region; a positive staggered structure; and a reverse staggered structure. a structure in which the channel region is divided into a plurality of regions, a structure in which the channel regions are connected in parallel, or A transistor having a structure in which channel regions are connected in series can be used. Transistors include planar type, FIN type, and TRI-GATE type. Gate type), top gate type, bottom gate type, double gate type (gates above and below the channel The configuration can be various, such as a single-chip microcomputer (where a single chip is placed) or a multi-chip microcomputer (where a single chip is placed).

[0334] As an example of a transistor, a source electrode or A transistor with an overlapping drain electrode can be used. By making the source electrode and drain electrode overlap the This can prevent the operation from becoming unstable due to charge accumulating in a portion of the panel region.

[0335] As an example of a transistor, a structure in which an LDD region is provided can be applied. By providing a gate, the off-state current can be reduced or the withstand voltage of the transistor can be improved (reliability can be improved). Alternatively, by providing an LDD region, when operating in the saturation region, Even if the voltage between the drain and source is changed, the drain current does not change much and the slope is flat. A stable voltage-current characteristic can be obtained.

[0336] For example, in this specification, it is possible to form transistors using various substrates. The type of substrate is not limited to a specific one. Conductor substrates (e.g., single crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, Plastic substrate, metal substrate, stainless steel substrate, stainless steel foil Substrate with tungsten foil, Tungsten substrate, Substrate with tungsten foil, Flexible substrate, Adhesive There are laminated films, papers containing fibrous materials, and base films. Examples include barium borosilicate glass, aluminoborosilicate glass, or soda lime glass. Examples of flexible substrates, laminated films, and base films include glass. Examples of such materials include polyethylene terephthalate (PET), polyethylene Plastics such as polyolefin naphthalate (PEN) and polyethersulfone (PES) One example is synthetic resin such as acrylic. Another example is Examples of the material include polypropylene, polyester, polyvinyl fluoride, and polyvinyl chloride. Examples include polyamide, polyimide, aramid, epoxy, and inorganic vapor deposition. Films, papers, etc. In particular, semiconductor substrates, single crystal substrates, and SOI substrates, etc. By manufacturing transistors using this method, there is little variation in characteristics, size, shape, etc. This allows the manufacture of transistors with fewer gates, higher current capability, and smaller size. When a circuit is constructed using such transistors, the power consumption of the circuit can be reduced or the circuit can be highly integrated. It is possible to achieve this.

[0337] Note that a transistor is formed using a certain substrate and then transferred to another substrate. However, the transistor may be disposed on another substrate. In addition to the substrate on which the above-mentioned transistors can be formed, the substrates include paper substrates, cellophane substrates, and the like. Aramid film substrate, polyimide film substrate, stone substrate, wood substrate, cloth substrate (Natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or Regenerated fibers (including acetate, cupra, rayon, recycled polyester, etc.), leather By using these substrates, transistors with good characteristics can be produced. Formation of stators, formation of transistors with low power consumption, manufacturing of durable devices, and heat resistance It is possible to achieve a lighter, thinner, or more flexible structure.

[0338] All circuits required to realize a given function are mounted on the same substrate (e.g., glass It can be formed on a substrate such as a silicon substrate, a plastic substrate, a single crystal substrate, or an SOI substrate. This allows for cost reduction by reducing the number of components, and for the reduction in the number of connections to circuit components. This can improve reliability.

[0339] It is possible that all of the circuits required to realize a given function are not formed on the same substrate. In other words, part of the circuitry required to realize a given function is formed on a certain substrate. Another part of the circuitry required to realize a given function is formed on a different substrate. For example, some of the circuits required to realize a certain function can be made of glass. Another part of the circuitry required to realize a given function is formed on the single crystal substrate. (or SOI substrate). The single crystal substrate (also called IC chip) on which another part of the circuitry required for the semiconductor device is formed is called COG ( By using the Chip On Glass (Chip On Glass) method, the IC is connected to the glass substrate and then attached to the glass substrate. It is possible to place the chip on the board. Or, the IC chip can be placed on the board using TAB (Tape Auto) omated Bonding), COF(Chip On Film), SMT(Su Surface Mount Technology, or a printed circuit board, etc. In this way, part of the circuit is formed on the same substrate as the pixel section. This reduces the number of components, resulting in lower costs, and the number of connections to the circuit components. This reduces the power consumption and improves the reliability of the circuit. In many cases, circuits with high drive frequencies consume a lot of power. Then, such a circuit is formed on a substrate (such as a single crystal substrate) separate from the pixel section, and By using this IC chip, it is possible to prevent an increase in power consumption. do.

[0340] In addition, regarding the contents not specified in the drawings or text in the specification, Or, for a certain value, it is possible to configure an invention that specifies the upper and lower limits. When a numerical range is stated, such as by narrowing the range arbitrarily, or By excluding one point within the scope, an invention that excludes part of the scope can be defined. These can, for example, define that prior art does not fall within the technical scope of the present invention. This can be done.

[0341] As a specific example, a circuit diagram in which first to fifth transistors are used in a circuit is shown below. In that case, the circuit does not have a sixth transistor. Alternatively, the circuit does not have a capacitance element. Furthermore, it is possible to specify that the circuit has a certain connection structure. The invention can be configured by specifying that the sixth transistor is not included. The circuit does not have a capacitive element having a specific connection structure. For example, the gate of the third transistor is connected to the gate of the third transistor. Alternatively, the invention may be specified as not having a sixth transistor. For example, a capacitor element having a first electrode connected to the gate of a third transistor may be provided. It is possible to define the invention as not being

[0342] As another specific example, for a certain value, for example, "a certain voltage is 3 V or more and 10 V or less. In that case, for example, if a certain voltage is -2V or more and 1V or less, excluding the case where the voltage is less than 1V. It is possible to stipulate that the invention does not apply when a certain voltage is 13V or more. For example, the invention may be stipulated that the voltage is between 5V and 8V. For example, the voltage may be set to about 9V. For example, the invention is defined as a voltage between 3V and 10V, but excluding the case of 9V. It is also possible.

[0343] As another specific example, for a certain value, for example, "It is preferable that a certain voltage is 10 V" In that case, for example, if a certain voltage is between -2V and 1V, Or, for example, the invention can be defined as except when a certain voltage is: It is possible to define the invention as except when the voltage is 13V or higher.

[0344] As another specific example, when describing the properties of a certain substance, for example, "a certain film is an insulating film," In that case, the insulating film is, for example, an organic insulating film. Alternatively, for example, the insulating film may be an inorganic insulating film. It is possible to define the invention as "except in the case where

[0345] As another specific example, regarding a certain laminated structure, for example, "a certain film is provided between A and B" In that case, for example, if the film is a laminated film of four or more layers, Or, for example, A and its membrane and It is possible to specify the invention as excluding the case where a conductive film is provided between the

[0346] The inventions described in this specification can be implemented by a variety of people. However, the implementation may span multiple people. In the case of a receiving system, Company A manufactures and sells the transmitter, and Company B manufactures and sells the receiver. In another example, a light-emitting device having a TFT and a light-emitting element may be sold. In this case, the semiconductor device on which the TFT is formed is manufactured and sold by Company A. The company purchases the semiconductor device, deposits light-emitting elements on the semiconductor device, and uses them as light-emitting devices. There are cases where it means completing something.

[0347] In such a case, the inventor must be able to assert patent infringement against either Company A or Company B. Therefore, if you assert a patent infringement claim against Company A or Company B, It is possible to determine that one aspect of the invention is clear and described in the present specification, etc. For example, in the case of a transmission / reception system, the transmitter alone constitutes one aspect of the invention. The receiver alone can constitute one aspect of the invention, and the one aspect of the invention is It can be determined that the above is clear and described in the present specification. In the case of a light-emitting device having a TFT and a light-emitting element, a semiconductor device in which the TFT is formed One embodiment of the present invention can be constructed only by a light-emitting device having a TFT and a light-emitting element. These aspects of the invention are clearly defined and are set forth in the present specification. It can be judged that the information is stated in the above.

[0348] In this specification, the terms "active elements" and "passive elements" are used interchangeably. For all terminals of devices (capacitive elements, resistive elements, etc.), the connection destination is not specified. However, a person skilled in the art may be able to configure one aspect of the invention. Even if the destination is not specified, one aspect of the invention is clear. When the contents are described in this specification, etc., one aspect of the invention that does not specify a connection destination is the same as the embodiment of the present specification. In particular, when the terminals are connected to multiple If such a case is considered, there is no need to limit the connection destination of the terminal to a specific location. Therefore, there are active elements (transistors, diodes, etc.) and passive elements (capacitive elements, resistive elements, etc.) By specifying the connection destinations of only some of the terminals of a device (e.g., It may be possible to configure one embodiment.

[0349] In this specification and the like, if at least the connection destination of a certain circuit is specified, it is understood by those skilled in the art that If you are a person who has experience in the field of electronics, you may be able to identify the invention. In some cases, a person skilled in the art can identify an invention by at least specifying the function. In other words, if a function is specified, it can be said that one aspect of the invention is clear. It may be possible to determine that one aspect of the invention is described in the present specification. Therefore, even if the function of a circuit is not specified, if the connection destination is specified, it can be considered as an embodiment of the invention. and can constitute one embodiment of the invention. For a certain circuit, even if the connection destination is not specified, if the function is specified, it can be considered as one aspect of the invention. What is disclosed can constitute an embodiment of the invention.

[0350] In the present specification and the like, in the figures or texts described in a certain embodiment, it is possible to extract a part thereof to constitute an aspect of the invention. Therefore, when a figure or text describing a certain part is described, the content obtained by extracting the figure or text of that part is also disclosed as an aspect of the invention and can constitute an aspect of the invention. Therefore, for example, active elements (such as transistors and diodes), wiring, passive elements (such as capacitive elements and resistive elements), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described singly or plurally in a drawing or text, and it is possible to extract a part thereof to constitute an aspect of the invention. For example, from a circuit diagram composed of N (N is an integer) circuit elements (such as transistors and capacitive elements), M (M is an integer and M < N) circuit elements (such as transistors and capacitive elements) can be extracted to constitute an aspect of the invention. As another example, from a cross-sectional view composed of N (N is an integer) layers, M (M is an integer and M < N) layers can be extracted to constitute an aspect of the invention. As yet another example, from a flowchart composed of N (N is an integer) elements, M (M is an integer and M < N) elements can be extracted to constitute an aspect of the invention. In the present specification and the like, in the figures or texts described in a certain embodiment, when at least one specific example is described, it is easily understood by those skilled in the art to derive the upper concept of that specific example. Therefore, in a certain embodiment, the description When a figure or text describing a certain part is described, the content obtained by extracting the figure or text of that part is also disclosed as an aspect of the invention and can constitute an aspect of the invention. Therefore, for example, active elements (such as transistors and diodes), wiring, passive elements (such as capacitive elements and resistive elements), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described singly or plurally in a drawing or text, and it is possible to extract a part thereof to constitute an aspect of the invention. For example, from a circuit diagram composed of N (N is an integer) circuit elements (such as transistors and capacitive elements), M (M is an integer and M < N) circuit elements (such as transistors and capacitive

[0351] In the present specification and the like, in the figures or texts described in a certain embodiment, when at least one specific example is described, it is easily understood by those skilled in the art to derive the upper concept of that specific example. Therefore, in a certain embodiment, the description When at least one specific example is described in a figure or text, the general outline of that specific example is The invention is also disclosed as an embodiment of the invention and may constitute an embodiment of the invention. It is Noh.

[0352] In this specification, at least the contents shown in the drawings (or even a part of the drawings) This is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, if something is shown in a diagram, it does not need to be explained in words. However, the contents are disclosed as one aspect of the invention and constitute one aspect of the invention. Similarly, a part of the drawings may be regarded as an embodiment of the invention. This is disclosed as an embodiment of the invention.

[0353] In the figures, the size, layer thickness, or area may be exaggerated for clarity. Therefore, the scale is not necessarily limited to that.

[0354] In this specification, the shape of an object may be expressed, for example, as a "diameter," "particle size," "size," When specifying the "width" etc., it is the length of one side of the smallest cube that the object can fit into, or the length of the object itself. The equivalent diameter of a circle in a cross section of an object may be read as the equivalent diameter of a circle in a cross section of an object. The diameter of a circle whose area is equal to the cross section of the body.

[0355] Even if a material is described as a "semiconductor," if its electrical conductivity is sufficiently low, it may be considered an "insulator." In addition, the boundary between "semiconductor" and "insulator" is unclear, and Therefore, the term "semiconductor" as used herein may not be distinguishable from "insulator." Similarly, the term "insulator" used in this specification may be interpreted as "semiconductor." " This can sometimes be rephrased as ".

[0356] In addition, even if a material is written as a "semiconductor," if the material has a sufficiently high electrical conductivity, it should be written as a "conductor." In addition, the boundary between "semiconductor" and "conductor" is unclear, and Therefore, the term "semiconductor" as used herein may not be distinguished from "conductor." Similarly, the term "conductor" used in this specification may be used interchangeably with "semiconductor." " This can sometimes be rephrased as ".

[0357] The impurities in the semiconductor film refer to, for example, other than the main components constituting the semiconductor film. For example, Elements with a concentration of less than 0.1 atomic% are impurities. For example, carrier traps may be formed in the semiconductor film, and carrier mobility may decrease. In some cases, the crystallinity of the semiconductor film may be decreased. In this case, impurities that change the properties of the semiconductor film include, for example, Group 1 elements, Group 2 elements, Group 14 elements, Group 15 elements, transition metals other than the main components, etc., especially hydrogen ( (Also found in water), lithium, sodium, silicon, boron, phosphorus, carbon, nitrogen, etc. In the case of an oxide semiconductor, oxygen vacancies may be formed due to the inclusion of impurities. When the semiconductor film is a silicon film, impurities that change the properties of the semiconductor film include, for example, Examples include oxygen, Group 1 elements excluding hydrogen, Group 2 elements, Group 13 elements, and Group 15 elements. .

[0358] In this specification, the term "excess oxygen" refers to oxygen contained in excess of the stoichiometric composition. Alternatively, the excess oxygen refers to oxygen that is released, for example, by heating. For example, oxygen can move inside a film or layer. The movement of excess oxygen causes the atoms of the film or layer to move. When oxygen moves between the membrane and the layer, it moves in a domino effect, replacing the oxygen that makes up the membrane or layer. In addition, the insulating film containing excess oxygen has a function of releasing oxygen by, for example, heat treatment. It is an insulating film having a function.

[0359] In this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. Therefore, it includes the case where the angle is between -5° and 5°. "Perpendicular" means that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, this also includes cases where the angle is between 85° and 95°.

[0360] In the embodiment, the conductive film is made of, for example, aluminum, titanium, chromium, cobalt, etc. Nickel, Copper, Yttrium, Zirconium, Molybdenum, Ruthenium, Silver, Tanta A conductive film containing titanium or tungsten may be used in a single layer or a multilayer structure. Examples of conductive films having transparency include an In-Zn-W oxide film, an In-Sn oxide film, Oxide films such as In-Zn oxide film, indium oxide film, zinc oxide film, and tin oxide film The oxide film described above can be used even if small amounts of Al, Ga, Sb, F, etc. are added. Also, a thin metal film that transmits light (preferably, 5 nm to 30 nm) For example, a Ag film, an Mg film, or an Ag-Mg alloy film having a thickness of 5 nm can be used. A gold film may be used. Alternatively, a film that efficiently reflects visible light may be, for example, a lithium , aluminum, titanium, magnesium, lanthanum, silver, silicon or nickel A membrane may be used.

[0361] Examples of the insulating film include aluminum oxide, magnesium oxide, silicon oxide, Silicon oxynitride, silicon nitride oxide, silicon nitride, gallium oxide, germanium oxide , yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide Alternatively, an insulating film containing tantalum oxide may be used as a single layer or a multilayer. Resin films such as imide resin, acrylic resin, epoxy resin, and silicone resin may also be used. do not have.

[0362] In addition, in this specification, when the crystal is a trigonal or rhombohedral crystal, it is represented as a hexagonal crystal system. .

[0363] In addition, the terms "first," "second," "third," etc., used in this specification are used interchangeably to avoid confusion of components. The number is added for convenience and is not intended to be a numerical limit. The terms can be replaced with "second" or "third" as appropriate for explanation.

[0364] In this specification, when an etching process is performed after a photolithography process, The mask formed in the photolithography process is removed.

[0365] The transistor further includes a second gate for applying a potential to the back channel. In that case, in order to distinguish between the two gates, The terminal exposed is called the "front gate" and the other is called the "back gate."

[0366] Voltage is the potential difference between two points, and potential is the electrostatic field at a certain point. This refers to the electrostatic energy (electrical potential energy) possessed by a unit charge in a particle. Generally, the potential difference between a potential at a certain point and a reference potential (for example, ground potential) This is simply called potential or voltage, and potential and voltage are often used synonymously. Therefore, in this specification, unless otherwise specified, potential may be read as voltage. In this specification, voltage may be read as potential.

[0367] In this specification, a voltage refers to a potential and a reference potential (for example, a ground potential). Therefore, voltage, potential, and potential difference are often referred to as potential, voltage, and This can be rephrased as voltage difference. Voltage refers to the potential difference between two points. Electric potential is the electrostatic energy (electrical potential) of a unit charge in a static electric field at a certain point. This refers to potential energy.

[0368] Generally, potentials and voltages are relative. Therefore, the ground potential is It is not necessarily limited to 0 volts.

[0369] A transistor is a type of semiconductor device that controls the amplification of current or voltage and the conduction or non-conduction of electricity. In this specification, the transistor can realize a switching operation that controls the , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT: Thin Film Transistor ).

[0370] For example, in this specification, a transistor is defined as a transistor having a gate, a drain, and a source. The drain terminal is a drain electrode. (source terminal, source region or source electrode) and the source (source terminal, source region or source electrode) A channel region is provided between the drain and the source, and a current flows through the drain, the channel region, and the source. Here, the source and drain are the same in structure and operation of a transistor. Since it varies depending on conditions, it is difficult to determine which is the source and which is the drain. Therefore, the part that functions as the source and the part that functions as the drain are In some cases, the term "source" or "drain" is not used. In such cases, the term "source" and "drain" is used as an example. One of the two is referred to as a first terminal, a first electrode, or a first region, and the other of the source and drain is referred to as a first region. This may be referred to as the second terminal, the second electrode, or the second region.

[0371] For example, in the present specification, it is explicitly stated that X and Y are connected. The cases are when X and Y are electrically connected and when X and Y are functionally connected. The case where X and Y are directly connected and the case where X and Y are directly connected are both considered to be disclosed in this specification. Here, X and Y are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, etc.). , layer, etc.) Therefore, a given connection relationship, for example, The present invention is not limited to the connections shown in the drawings or text, and connections other than those shown in the drawings or text are also included in the drawings or text. It shall be as set forth in the chapter.

[0372] An example of a direct connection between X and Y is a circuit that allows electrical connection between X and Y. The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, When a resistor (such as an electrode, display element, light-emitting element, or load) is not connected between X and Y, The elements that allow electrical connection between X and Y (e.g., switches, transistors, capacitors, etc.) elements, inductors, resistors, diodes, display elements, light-emitting elements, loads, etc.) , X and Y are connected.

[0373] An example of the case where X and Y are electrically connected is The elements that function as One or more diodes, display elements, light-emitting elements, loads, etc.) are connected between X and Y. The switch has a function of being controlled to be on and off. A switch can be in a conductive state (on) or a non-conductive state (off) to allow current to flow. The switch has the function of controlling whether or not current flows. When X and Y are electrically connected, X This also includes the case where and Y are directly connected.

[0374] An example of a case where X and Y are functionally connected is a case where a functional connection between X and Y is possible. Circuits that perform the above functions (for example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits ( power supply circuits (voltage boost circuits, voltage drop circuits, etc.), level shifter circuits that change the potential level of signals, etc.) , voltage sources, current sources, switching circuits, amplifier circuits (which can increase the signal amplitude or current amount, etc.) circuits, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation One or more devices (such as a memory circuit, a control circuit, etc.) can be connected between X and Y. For example, even if another circuit is inserted between X and Y, the signal output from X If X is transmitted to Y, then X and Y are considered to be functionally connected. When X and Y are functionally connected, there are cases where X and Y are directly connected and cases where X and Y are functionally connected. and the case where they are electrically connected to each other.

[0375] In addition, if it is explicitly stated that X and Y are electrically connected, When X and Y are electrically connected (i.e., when there is another element or circuit between X and Y), When X and Y are functionally connected (i.e., when X and Y are (X and Y are connected functionally with another circuit between them) and (X and Y are connected directly (i.e., when X and Y are connected without any other element or circuit between them) In other words, it is assumed that the above is disclosed in the present specification. When the connection is explicitly stated, it is the same as if it were simply stated that the connection is Such contents are deemed to be disclosed in the present specification.

[0376] For example, the source (or the first terminal, etc.) of the transistor is connected via Z1 (or The drain (or second terminal, etc.) of the transistor is electrically connected to Z 2 (or not), it may be electrically connected to Y, or the source of the transistor (or the first terminal, etc.) is directly connected to a part of Z1, and another part of Z1 is directly connected to X. The drain (or second terminal, etc.) of the transistor is directly connected to a part of Z2. and another part of Z2 is directly connected to Y, It is possible to do so.

[0377] For example, "X and Y and the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor The terminals of the transistor (or the first terminal, etc.) are electrically connected to each other, and X, the source of the transistor (or the first terminal, etc.) 1 terminal, etc.), the drain (or second terminal, etc.) of the transistor, and Y. "The source (or the third) of the transistor is connected to the The drain (or second terminal, etc.) of the transistor is electrically connected to X. The transistor source (or first terminal, etc.) is electrically connected to Y, and the transistor source (or first terminal, etc.) is electrically connected to X. The drain (or second terminal, etc.) of the transistor, Y, is electrically connected in this order. " Alternatively, "X is the source (or first terminal, etc.) of a transistor. The transistor is electrically connected to Y via a drain (or a second terminal, etc.) and a transistor is electrically connected to X via a drain (or a second terminal, etc.). The source (or first terminal, etc.) of a resistor, the drain (or second terminal, etc.) of a transistor ), Y is provided in this connection order. By using a simple expression method and specifying the order of connections in the circuit configuration, Distinguish between the source (or first terminal, etc.) and the drain (or second terminal, etc.) of a transistor. The technical scope can be determined based on the above.

[0378] Or, as another way of expressing it, for example, "the source (or first terminal, etc.) of a transistor is electrically connected to X through at least a first connection path, and the first connection path is , the second connection path does not have a second connection path, and the second connection path is a transistor The source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor The first connection path is a path via Z1, and the second connection path is a path between the transistor The drain (or second terminal, etc.) of the capacitor is electrically connected to Y through at least a third connection path. The third connection path does not include the second connection path, and the third connection path The connection path is the path through Z2. The source (or the first terminal, etc.) of the resistor is connected to the resistor via Z1 by at least the first connection path. and X is electrically connected to the first connection path, and the first connection path does not have a second connection path; The second connection path includes a connection path through a transistor, and the second connection path includes a drain of the transistor. (or the second terminal, etc.) is connected to Y via Z2 by at least a third connection path. The third connection path does not have the second connection path. Alternatively, the source (or the first terminal, etc.) of the transistor may be at least The first electrical path is electrically connected to X through Z1, and the first electrical path is The primary path does not have a second electrical path, and the second electrical path is a From the source (or first terminal, etc.) to the drain (or second terminal, etc.) of the transistor The drain (or second terminal, etc.) of the transistor is connected to at least a third The third electrical path is electrically connected to Y through Z2. , the fourth electrical path is not included, and the fourth electrical path is a drain of the transistor (or second terminal, etc.) to the source (or first terminal, etc.) of the transistor. Using the same expression as these examples, the circuit configuration By defining the connection path in Distinguish between the first terminal (or the second terminal, etc.) and the drain (or the second terminal, etc.) to determine the technical scope. can be done.

[0379] Note that these expression methods are merely examples, and the present invention is not limited to these expression methods. , Y, Z1, and Z2 are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layer, etc.).

[0380] In addition, the circuit diagram shows independent components as if they are electrically connected to each other. Even if the components are the same, one component may have the functions of multiple components. For example, when a part of the wiring also functions as an electrode, one conductive film has the function of the wiring and The electrode functions as both components. The term "electrochemically connected" refers to a case where one conductive film has the functions of multiple components. This also falls within the scope of the above.

[0381] For example, in the present specification, Y is formed on X, or Y is formed on X. If it is explicitly stated that the two are formed in a single layer, Y must be directly on top of X. It is not limited to the above. In cases where there is no direct contact, that is, there is another object between X and Y. Here, X and Y are objects (e.g., devices, elements, circuits, wiring, electrode, terminal, conductive film, layer, etc.).

[0382] Therefore, for example, it is not possible to explicitly state that layer Y is formed on (or on top of) layer X. In the cases described, layer Y is formed directly on layer X, and layer X is formed on layer Y. Another layer (such as layer Z) is formed directly on top of it, and layer Y is formed directly on top of it. In addition, the other layer (e.g., layer Z) may be a single layer. Also, it may be multi-layered (laminated).

[0383] Furthermore, the same applies to cases where it is explicitly stated that Y is formed above X. It is not limited to Y being directly on top of X, and there is no other object between X and Y. For example, a layer Y is formed above a layer X. In this case, layer Y is formed directly on layer X, and layer Y is formed directly on layer X. Another layer (e.g. layer Z) is formed on top of it, and layer Y is formed directly on top of it. The other layer (e.g., layer Z) may be a single layer or a multi-layer. (Laminated) may also be used.

[0384] In addition, Y is formed on X, Y is formed on X, or Y is formed above X When explicitly stating that "Y is formed diagonally above X," this also includes the case where Y is formed diagonally above X. do.

[0385] The same applies to the case where there is a Y below an X, or a Y below an X.

[0386] For example, in this specification, the terms "above," "upward," "under," "below," and "sideways" are used. "to the right", "to the left", "diagonally", "to the back", "to the front", "inside", "outside", or Spatial location terms such as "in" indicate the relationship of one element or feature to another. It is often used to simply show a series of events in a diagram, but is not limited to this. These spatial terms can include directions in addition to those shown in the drawings. For example, if it is explicitly stated that Y is on top of X, this does not necessarily mean that Y is on top of X. The device in the diagram can be flipped or rotated 180 degrees so that Y is below X. Thus, the phrase "on" can include the direction of "on" In addition to the above, the direction of "down" can be included. However, it is not limited to this. Because the vice can rotate in many directions, the phrase "on" can be used to refer to both "on" and In addition to the "down" and "sideways" directions, you can also move the cursor to the "right" or "left" direction, "diagonally", "backwards", or "hands". Other directions such as "in front of," "into," "outside," or "into" may be included. This means that it can be interpreted appropriately depending on the situation.

[0387] This embodiment may be modified, added, revised, deleted, or altered in whole or in part with respect to other embodiments. This corresponds to an application, a superordinate concept, or a subordinate concept. Any part or all of the present invention may be freely combined with any part or all of the other embodiments, or may be used as appropriate. It can be used or substituted. [Explanation of symbols]

[0388] 10 Electron Gun Room 12 Optical system 14 Sample Room 16 Optical system 18 Camera 20 Observation Room 22 Film Room 32 Fluorescent Screen 101 Case 110 Display Panel 111 Display area 112 Display area 113 Display area 114 Display area 115 Display area 116 Display area 121 Icons 125 Slide bar 126 fingers 150 Electronic equipment 153a Support Panel 155a Support Panel 155b Support panel 201 areas 202 Image sensor 203 Lighting elements 204 Lighting Images 205 Subject 206 images 207 images 208 Icons 209 Icons 300 Touch Panel 301 Display section 302 pixels 302B subpixel 302G subpixel 302R subpixel 302t Transistor 303c capacity 303g(1) Scanning line driver circuit 303g(2) Imaging pixel driving circuit 303s(1) Image signal line driver circuit 303s(2) Imaging signal line driver circuit 303t Transistor 308 imaging pixels 308p Photoelectric conversion element 308t transistor 309 FPC 310 Substrate 310a Barrier film 310b board 310c adhesive layer 311 Wiring 319 Terminal 321 Insulating Film 328 Bulkhead 329 Spacer 350R Light emitting element 351R lower electrode 352 Upper electrode 353 layers 353a Light Emitting Unit 353b Light Emitting Unit 354 Middle Class 360 Encapsulating material 367BM light shielding layer 367p anti-reflection layer 367R colored layer 370 Opposing Substrate 370a Barrier film 370b board 370c adhesive layer 380B Light Emitting Module 380G Light Emitting Module 380R Light Emitting Module 401 Battery 402 Receiving means 403 Communication Equipment 404 Speaker 405 Speaker 500 Touch Panel 500B Touch Panel 501 Display section 502R subpixel 502t transistor 503c capacity 503g(1) Scanning line driver circuit 503t Transistor 509 FPC 510 Substrate 510a Barrier film 510b Board 510c adhesive layer 511 Wiring 519 Terminal 521 Insulating film 528 Bulkhead 550R Light emitting element 560 Encapsulating material 567BM light shielding layer 567p anti-reflection layer 567R colored layer 570 Substrate 570a Barrier film 570b board 570c ​​adhesive layer 580R Light Emitting Module 590 Substrate 591 Electrode 592 Electrode 593 Insulating Layer 594 Wiring 595 Touch Sensor 597 Adhesive layer 598 Wiring 599 Connection Layer

Claims

1. A foldable electronic device, A first display area and a terminal provided on a flexible substrate; An image sensor having a function as a camera; an FPC electrically connected to the terminal; a first support having an overlap with a first portion of a non-display area surrounding the first display area; a second support spaced apart from the first support and overlapping a second portion of the non-display area; a third support having an area located between the first support and the second support and overlapping a third portion of the non-display area; the first display area and the imaging element are provided on a first surface side of the electronic device, the first display area has a function of displaying an image for lighting when the image sensor captures an image of a subject; a function of controlling light of the illumination image in response to ambient light around the subject; the third support is less flexible than the substrate; the first support and the second support are less flexible than the third support; the first display area has a fourth portion adjacent to the third portion; the first display area is folded at the third portion and the fourth portion; In a plan view, the flexible substrate has a long side in a first direction and a short side in a second direction perpendicular to the first direction, In a plan view, the flexible substrate has a first region having a first length in the second direction and a first side having a second length in the second direction that is smaller than the first length; the first display area is provided so as to overlap with the first area, The FPC overlaps with the first side.

2. A foldable electronic device, A first display area and a terminal provided on a flexible substrate; An image sensor having a function as a camera; an FPC electrically connected to the terminal; a first support having an overlap with a first portion of a non-display area surrounding the first display area; a second support spaced apart from the first support and overlapping a second portion of the non-display area; a third support having an area located between the first support and the second support and overlapping a third portion of the non-display area; the first display area and the imaging element are provided on a first surface side of the electronic device, the first display area has a function of displaying an image for lighting when the image sensor captures an image of a subject; a function of controlling light of the illumination image in accordance with a color of ambient light around the subject; the third support is less flexible than the substrate; the first support and the second support are less flexible than the third support; the first display area has a fourth portion adjacent to the third portion; the first display area is folded at the third portion and the fourth portion; In a plan view, the flexible substrate has a long side in a first direction and a short side in a second direction perpendicular to the first direction, When viewed in a plan view, the flexible substrate has a first region having a first length in the second direction and a first side having a second length in the second direction that is smaller than the first length; the first display area is provided so as to overlap with the first area, The FPC overlaps with the first side.

3. A foldable electronic device, A first display area and a terminal provided on a flexible substrate; An image sensor having a function as a camera; an FPC electrically connected to the terminal; a first support having an overlap with a first portion of a non-display area surrounding the first display area; a second support spaced apart from the first support and overlapping a second portion of the non-display area; a third support having an area located between the first support and the second support and overlapping a third portion of the non-display area; the first display area and the imaging element are provided on a first surface side of the electronic device, the first display area has a function of displaying an image for lighting when the image sensor captures an image of a subject; A function of controlling the emission color of the illumination image, the third support is less flexible than the substrate; the first support and the second support are less flexible than the third support; the first display area has a fourth portion adjacent to the third portion; the first display area is folded at the third portion and the fourth portion; In a plan view, the flexible substrate has a long side in a first direction and a short side in a second direction perpendicular to the first direction, When viewed in a plan view, the flexible substrate has a first region having a first length in the second direction and a first side having a second length in the second direction that is smaller than the first length; the first display area is provided so as to overlap with the first area, The FPC overlaps with the first side.

4. In any one of claims 1 to 3, the first display area has a function of displaying the lighting image and a function of displaying a first image functioning as a shutter button; The electronic device captures an image of the subject by touching the first image.

5. In any one of claims 1 to 4, The electronic device has a second display area on a second surface side of the electronic device.

6. In claim 5, The electronic device, wherein the second display area is disposed adjacent to the first display area.

Images