Optoelectronic structure, pixel, display arrangement structure and related method

Abstract

An optoelectronic component is proposed, which comprises at least one semiconductor element having an active zone configured to generate light, a dielectric filter disposed on a first main surface of the at least one semiconductor element and configured to transmit light only in a predetermined direction, and a reflective material disposed on at least one side of the at least one semiconductor element and on at least one side of the dielectric filter.

Description

[Technical field]

[0001] This patent application claims the priority of German Patent Application Publication No. 102019112604.5, dated May 14, 2019, of German Patent Application Publication No. 102019113792.6, dated May 23, 2019, of German Patent Application Publication No. 102019129209.3, dated October 29, 2019, of German Patent Application Publication No. 102019131506.9, dated November 21, 2019, and of International Application PCT / EP2020 / 052191, dated January 29, 2020, the disclosures of which are incorporated herein by reference.

[0002] The present invention relates to an optoelectronic component and a pixel comprising an optoelectronic component.The present invention further relates to a display arrangement structure and a method for producing the same.

[0003] Background technology In many applications, such as displays, optoelectronic components are assembled monolithically. Thus, the individual components are not arranged on a board or backplane, but rather the optoelectronic components are integrated into a substrate, which allows them to be individually driven and controlled. This not only allows for miniaturization, but also has the advantage that fewer transfer and soldering steps are required. Furthermore, such monolithic modules can be easily scaled, both in terms of the size of the individual components and the size of the module. The components can be arranged in a freely definable matrix. Such scaling effects are very advantageous, especially in the case of mass production.

[0004] Depending on the different applications, different radiation patterns are required in particular: in some applications, the optoelectronic component should have a Lambertian radiation pattern, in other applications it is desirable for the radiation to be as directional as possible.

[0005] In the case of a monolithic design, on the one hand, the control and drive electronics can be integrated into the substrate on which the optoelectronic components are manufactured. On the other hand, it is also possible for the circuitry and the optoelectronic components to be manufactured separately and then combined. In this case, it is important to ensure the correct positioning.

[0006] This application deals with several aspects of monolithic displays, particularly with themes relating to redundancy, radiation patterns and drive control in case of failure of an optoelectronic component.

[0007] Summary of the Invention One aspect concerns the improvement of the radiation pattern of an LED with a dielectric filter that adds a reflective surface. An optoelectronic component, in particular an LED, according to a first aspect of the present disclosure includes at least one semiconductor component, a dielectric filter, and a reflective material.

[0008] The at least one semiconductor element includes an active zone that is configured to generate light. In particular, it may be configured as a vertical or horizontal LED. Measures are possible to increase the efficiency of the structural element. Furthermore, the at least one semiconductor element has a first main surface, a second main surface opposite the first main surface, and a side surface extending between the two main surfaces. For example, the at least one semiconductor element may have three or more side surfaces. However, it is also conceivable that the at least one semiconductor element has a rounded main surface and therefore only one aspect.

[0009] The dielectric filter is disposed over a first main surface of the at least one semiconductor element and is configured to transmit or pass only light incident on the dielectric filter in a predetermined direction.

[0010] For example, the dielectric filter may be configured to transmit light only at a predefined cone angle. The cone angle is oriented such that its axis is perpendicular to the first main surface of the at least one semiconductor element. The angle between the outer surface or base of the cone and the axis of the cone, i.e., the half-opening angle of the cone, may have a predefined value. For example, the half-opening angle of the cone may be at most 5°, at most 15°, at most 30° or at most 60°. The light components incident on the dielectric filter from the semiconductor element at angles within the predefined cone angle are transmitted, while the remaining light components are substantially not transmitted and are, for example, reflected back to the semiconductor element. This allows for a high degree of directionality of the light emitted from the optoelectronic device.

[0011] The dielectric filter may be configured to have a very small cone angle opening angle, such that only light that exits the semiconductor device perpendicular to the first major surface is transmitted by the dielectric filter.

[0012] In one embodiment, the dielectric filter may be composed of a stack of dielectric layers, which is applied by coating onto the semiconductor element and has a particularly high transmittance. For example, the dielectric layers in the stack may have alternating low and high refractive indices. For example, Nb2O5, TiO2, ZrO2, HfO2, Al2O3, Ta2O5 or ZnO may be used as materials for the high refractive index dielectric layers. For example, SiO2, SiN, SiON or MgF2 may be used for the low refractive index dielectric layers. The stack of dielectric layers with alternating high and low refractive indices may be configured as a Bragg filter. Furthermore, the dielectric filter may be a photonic crystal.

[0013] The at least one semiconductor element and the dielectric filter have a reflective material deposited on one or more sides. The reflective material may be provided to cover at least one or more or all sides of the at least one semiconductor element. Similarly, the reflective material may cover at least one or more or all sides of the dielectric filter. In one configuration, the reflective material completely surrounds both the at least one semiconductor element and the dielectric filter laterally.

[0014] The reflective material may be reflective to the light emitted by the at least one semiconductor element, or at least a portion of the wavelength range of this light, such that light exiting through the side of the at least one semiconductor element or the dielectric filter is reflected back, increasing the efficiency of the optoelectronic component.

[0015] A plurality of structural elements may be proposed. These also have one or more monolithically assembled semiconductor elements, each having the above-mentioned properties. A dielectric filter is arranged on the semiconductor elements, respectively. Furthermore, the semiconductor elements are surrounded by a reflective material. Additionally or alternatively, a plurality of structural elements with semiconductor elements may be surrounded by such mirrors. For example, in such an arrangement, redundancy can be provided, so that if one semiconductor element fails, the redundant semiconductor element can take over its function. For example, the semiconductor elements may be arranged in an array, i.e. in a regular arrangement of a monolithic display.

[0016] The optoelectronic components may be integrated into a display, i.e. a display device. Each of the semiconductor components may represent or constitute one pixel of the display. Furthermore, each of the semiconductor components may represent a sub-pixel of a pixel, each pixel being formed from a number of sub-pixels that emit light having, for example, red, green and blue colors.

[0017] A high contrast between adjacent pixels is achieved by the reflective material laterally surrounding the individual semiconductor elements and the respective dielectric filters. Furthermore, a high pixel density is possible. According to one configuration, the semiconductor elements are configured as LEDs. LEDs have a small lateral extent of the light-emitting surface, in particular in the range of 140 μm to 750 μm. The structural elements of the monolithic array, unlike individual LEDs, each form a self-contained unit. The light emitted by the semiconductor elements can be, for example, in the visible range, ultraviolet (UV) light and / or infrared (IR) light.

[0018] In addition to displays, optoelectronic components according to the first aspect of the present application can also be used, for example, in AR (Augmented Reality; German: erweiterte Realitaet) applications and in other applications with pixelated arrays or pixelated light sources.

[0019] According to one configuration, at least one or more or all side surfaces of the at least one semiconductor element run at an angle at the height of the active zone. This means that at least a part of each side surface forms an angle with the first main surface of the at least one semiconductor element, which angle is not 90°, in particular less than 90°. The at least one semiconductor element may be chamfered over its entire height or only partially chamfered, but in any case the active zone is preferably in the chamfered area. The fully or partially chamfered side surface may form an interface with an insulating layer with a low refractive index. Light emitted in the horizontal direction is reflected by the chamfered side surface towards the surface of the component.

[0020] The at least one semiconductor element may have a first electrical terminal and a second electrical terminal. For example, one terminal may represent a cathode and the other terminal may represent an anode. Furthermore, the reflective material may be electrically conductive and electrically coupled to the first terminal of the at least one semiconductor element. In particular, the first terminal may be connected to an n-type doped region of the at least one semiconductor element. As a result, the reflective material creates an optical separation between adjacent pixels while at the same time providing an electrical contact to the at least one semiconductor element.

[0021] In the case of a plurality of optoelectronic components with a number of semiconductor elements, the reflective and conductive materials surrounding the respective semiconductor elements may be interconnected, so that the first terminals of the semiconductor elements can be controlled together from the outside. In this case, the second contacts of the semiconductor elements may be individually drivable, for example via the underside of the semiconductor element. This is advantageous for production, since only one contact needs to be defined with good resolution, and also facilitates the production of very small pixels, where the area required for two mutually separated contacts on the underside of the chip would be insufficient. The reflective material may be, for example, metallic, may contain metal or may be electro-deposited.

[0022] A reflective layer may be arranged under the second main surface of the at least one semiconductor element. Thereby, the light emerging through the second main surface is reflected back to the semiconductor element and completely leaves the optoelectronic component through the top surface. Furthermore, the reflective layer may be electrically conductive and electrically coupled to the second terminal of the at least one semiconductor element. For example, the second terminal may be connected to a p-type doped region of the at least one semiconductor element. As a result, the reflective layer, in addition to its reflective properties, also serves to establish an electrical contact with the at least one semiconductor element. It may also be proposed that the second terminal of each semiconductor element can be individually driven and controlled.

[0023] The reflective layer may, but need not, be made of the same material as the reflective material, for example, it may be made of a metal.

[0024] Alternatively to the above-mentioned configuration, the reflective layer may be electrically insulating and one or more conductive layers may be arranged above and / or below the reflective layer, in particular connected to the second contact of the at least one semiconductor element. In this case, the reflective layer may be, for example, a dielectric mirror and may be arranged above the metal layer. The electrical contact connection is then made via feed-throughs through the dielectric layer or via the side of the dielectric layer. Furthermore, an electrically conductive and transparent layer may be arranged above the reflective layer, i.e. between the at least one semiconductor element and the reflective layer. As a material for the electrically conductive and transparent layer, for example indium tin oxide (abbreviated ITO) can be used.

[0025] In one configuration, a silver mirror is disposed beneath a conductive, transparent layer, e.g., of indium tin oxide, and a dielectric mirror, or alternatively, only a conductive, transparent layer, e.g., of indium tin oxide, and a silver mirror, disposed beneath the at least one semiconductor element.

[0026] An electrically insulating first material may be disposed between the reflective material and the reflective layer. Furthermore, the electrically insulating first material may be in direct contact with one or more of the side surfaces of the at least one semiconductor element, in particular with the chamfered portion of the side surface. Furthermore, the electrically insulating first material may have a lower refractive index than the at least one semiconductor element, in particular in the region of the interface with the electrically insulating first material. As a result, the electrically insulating first material causes electrical insulation between the first and second terminals of the at least one semiconductor element. Furthermore, due to the refractive index contrast, light may be reflected back at the interface between the at least one semiconductor element and the electrically insulating first material.

[0027] The electrically insulating first material may consist of, for example, SiO2 and may be deposited by vapor deposition, for example using TEOS (tetraethyl orthosilicate), or by other methods, for example based on silane, to allow for high aspect ratios to be fulfilled.

[0028] Between the at least one semiconductor element and the dielectric filter, i.e. on the first main surface of the at least one semiconductor element, a layer having a roughened surface configured to redirect light into other spatial directions or to scatter the light may be arranged. This layer may have a Lambertian radiation pattern. Furthermore, the layer may be formed in such a way that light components with angles exceeding the critical angle for total internal reflection are redirected, so that in principle all components can be extracted and do not remain "trapped" in the component.

[0029] The aforementioned layers may, for example, consist of randomly or deterministically patterned semiconductor surfaces. The surfaces may have roughened structures with sloping flanks, the height of the roughened structures being up to a few hundred nm. The roughened structures may, for example, be produced by etching.

[0030] It is further possible not to use the above-mentioned layers and instead to roughen the first main surface of the at least one semiconductor element. For this purpose, a random or deterministic topology can be etched into the first main surface, for example, in order to achieve a Lambertian radiation pattern in particular. The roughened first main surface of the at least one semiconductor element can have the same properties as the roughened surface of the above-mentioned layers.

[0031] On the roughened surface of at least one semiconductor element or a layer arranged on said semiconductor element, a further layer, for example made of SiO2, having a refractive index different from that of the underlying layer and further having a flat upper surface, may be deposited, which additional layer allows for the application of a dielectric filter by means of its flat upper surface, while at the same time maintaining the functionality of the roughened surface of the underlying layer by virtue of the refractive index difference.

[0032] With a lateral extent of the pixel in the range of, for example, 140 μm to 750 μm, it is possible to reduce the height of the at least one semiconductor element by a few μm, in particular, the at least one semiconductor element can have a height in the range of 3 μm to 30 μm.

[0033] As mentioned above, the device may include a plurality of optoelectronic structural elements, which may have the configurations described herein. Each of the semiconductor elements of the structural elements may be completely surrounded laterally by a reflective material together with an associated dielectric filter and a reflective layer arranged under the respective semiconductor element. According to one configuration, the semiconductor elements are arranged in an array, with adjacent semiconductor elements being separated from each other by the reflective material. As a result, the reflective material forms a grid, and adjacent semiconductor elements are separated from each other only by the grid.

[0034] If the reflective material is also electrically conductive, the first terminals of all the semiconductor elements may be connected to a common external terminal via the reflective material, and the second terminals of the semiconductor elements may be individually drivable.

[0035] According to an alternative configuration, a plurality of semiconductor elements, each laterally surrounded by a reflective material, are juxtaposed, with an electrically insulating second material disposed between adjacent semiconductor elements, which may be, for example, a potting material.

[0036] In this configuration, the reflective material may be electrically conductive. Conductor tracks may extend above and / or below and / or within the electrically insulating second material for connecting the first terminals of the semiconductor elements to a common external terminal. The second terminals of the semiconductor elements may be individually drivable.

[0037] For drive control, a further substrate may be provided, on which contacts are arranged for connecting the terminals of the semiconductor structural elements.

[0038] A method according to a second aspect of the present application is used for manufacturing an optoelectronic component. The method comprises providing at least one semiconductor element having an active zone configured to generate light and arranging a dielectric filter on a first main surface of the at least one semiconductor element. The dielectric filter is configured to transmit only light in a predetermined direction. Furthermore, a reflective material is arranged or deposited on at least one side of the at least one semiconductor element and on at least one side of the dielectric filter.

[0039] The method of manufacturing an optoelectronic device according to the second aspect of the present application may comprise the above-mentioned configuration of an optoelectronic component according to these aspects of the present application.

[0040] In the following, aspects of processes and methods for manufacturing LEDs or displays or modules are detailed, but as already explained, process aspects also include processing of semiconductor structures or materials and vice versa. In this respect, the following aspects can be easily combined with the previous ones.

[0041] Due to the manufacturing process and the very small dimensions of the individual optical elements, individual pixel elements may fail within the many pixels of a display. This problem is exacerbated in monolithic display modules, because defects and variations in manufacturing are difficult to repair or correct due to their integration. In particular, monolithic displays cannot replace individual defective pixels, and high defect densities require replacement of the entire module.

[0042] Known solutions attempt to compensate for the missing light of a defective pixel, for example by setting surrounding or adjacent pixels to a higher brightness, so that the missing light from the defective pixel can be at least partially compensated for. In many cases, it is desirable to be able to use manufactured displays of sufficiently good quality even with individual defective pixels, since replacing or repairing these defective pixels does not seem economically or process feasible.

[0043] The following aspects of pixel elements with electrically isolated and optically coupled sub-pixels can compensate for such small defects, thus improving yields while maintaining the quality of the display or display module. It is noted here that the concepts presented here can also be used for the structural elements mentioned above, in that the side-attached material serves the role of optical and electrical isolation, as described below.

[0044] These aspects take into consideration the use of suitable measures to prevent optical crosstalk. In that respect, the measures proposed below are therefore not only suitable for the above-mentioned tasks, but the reduction of optical crosstalk has further advantages, especially when the optically active areas are very close to each other in monolithic structural elements and good optical isolation needs to be achieved. In the case of very densely arranged monolithic arrays or displays or display modules, a clean optical isolation between the pixels is necessary so that the emitted light of the optically active elements, i.e. LEDs, does not radiate into the area of ​​the neighboring pixels. In order to reduce the optical crosstalk, a trench (or more generally an optically isolating structure) is often provided between the two LEDs. On the one hand, in order to achieve a sufficiently good high-contrast image quality, the optical crosstalk needs to be suppressed, but this can also make pixel failures more noticeable.

[0045] Thus, an optical pixel element for generating pixels of a display is proposed, which is formed of at least two sub-pixels. According to an embodiment, a pixel element is provided with 2, 4, 6, 9, 12 or 16 sub-pixels. In other words, there is a redundancy in that two sub-pixels receive the same driving control information and are implemented, for example, for the same wavelength. If one of these at least two sub-pixels fails, the pixel element can still emit light of that wavelength. According to an embodiment, the luminance of the sub-pixel can be adjusted to compensate for the lack of light of the failed sub-pixel. According to an embodiment, the sub-pixels are implemented as so-called fields. For example, if the pixel element is implemented in a rectangular structure, the sub-pixels in the structure of the pixel element are formed by dividing them into fields again. Each of these sub-pixels can be driven and controlled independently of the sub-pixels of the other fields.

[0046] Each subpixel has an optical emitter region, which is intended to be individually controllable and capable of functioning autonomously. The emitter region may include a pn junction, one or more quantum well structures, or other active layers for generating light. The emitter region may have contacts on its underside that are connected to a control unit or electronic drive circuitry.

[0047] The drive control electronics are configured to electrically control the individual pixel elements and the individual sub-pixels. For example, the drive control electronics or the control device may be configured to detect a defect in a sub-pixel and subsequently not use the defective sub-pixel. Furthermore, according to an embodiment, the drive control electronics may be configured to drive the neighboring sub-pixels with increased luminance, such that the luminance of the neighboring failed sub-pixel is corrected. For this purpose, for example, a storage unit may be provided in the drive control electronics for storing the operating state of the sub-pixels. In other words, in this case, the detected defective sub-pixels can be detected intensively in order to adjust the luminance and / or compensate for the defect of the neighboring sub-pixels or pixel elements on / off, if necessary. In other configurations, the time during which the sub-pixels are active may be increased, for example, to compensate for the failed sub-pixels. On the other hand, if all sub-pixels are functional, the drive control circuit may also drive all sub-pixels with reduced luminance, reduced duration or multiplexed, respectively. By utilizing functional sub-pixels with less current and / or duration, the lifetime of the sub-pixels can be increased.

[0048] In order to separate two adjacent sub-pixels from each other in the pixel element, a sub-pixel separation element is provided, which serves to provide electrical separation with respect to the drive control of the respective emitter chip or the drive control of the sub-pixel, in other words, the sub-pixel separation element may be configured as a type that prevents electrical interaction between the emitter chips of adjacent sub-pixels.

[0049] In particular, due to the use of semiconductors and the small distances between the emitter regions of the individual subpixels in the μm range, driving the emitter tips may have secondary electrical or electromagnetic effects on spatially adjacent or surrounding areas, which may, under certain circumstances, lead to activation of adjacent emitter tips as well when driving the primary emitter tip. The subpixel separation elements are therefore configured to prevent electrical or optical crosstalk to adjacent subpixels and possible activation of adjacent subpixels.

[0050] On the other hand, the subpixel separation elements are configured to optically couple the light emitted by the emitter chips of adjacent subpixels, so as to counteract the visual impression that the individual subpixels are switched off. Optically couple means that the light generated by the primary emitter chips or the primary subpixels can penetrate into the adjacent subpixels by optical crosstalk. In this way, the formation of black dots or black spots due to defects in the subpixels can advantageously be prevented. Instead, light can also penetrate from the adjacent subpixels and radiate from the defective subpixel in the light-emitting direction. This advantageously allows the visible effects of the defective subpixels to be corrected. The subpixel separation elements therefore do not have or achieve any optical separation effect.

[0051] This is advantageous in the event of a failure of one subpixel. Since there is no optical isolation, the pixel is still perceived as a whole and does not give a different visual impression than if both subpixels were active. In one embodiment, the subpixel isolation element provides electrical isolation but no optical isolation, or may even optically promote crosstalk. In one variant, the subpixel isolation element is recessed only to the immediate vicinity or into the active layer of the two subpixels. In other words, the subpixel isolation element electrically isolates two subpixel elements that are connected via a common layer.

[0052] In one embodiment, the sub-pixels have a common epitaxial layer. Often, the pixel element or the entire display is constructed with a common layer or multiple overlapping layers grown that interconnect multiple sub-pixels and / or pixel elements. This can be used, for example, to provide a common electrical contact or connection. According to one embodiment, the epitaxial layer comprises the group III elements gallium, indium or aluminum and the group V elements nitrogen, arsenic or phosphorus, or a combination thereof, or a material system with the aforementioned elements. This can affect, among other things, the color and wavelength of the emitted light of the light-emitting diode. The epitaxial layer can also comprise the active semiconductor layer, i.e., for example, p-type doped regions and n-type doped regions, including the active boundary region.

[0053] For example, an emitter chip is arranged on a first surface of the epitaxial layer transverse to the longitudinal extension of the epitaxial layer plane. In this case, light of the emitter chip is emitted transversely to the epitaxial layer towards a second, opposing surface of the epitaxial layer and is emitted therefrom. The subpixel separating elements extend in the epitaxial layer in the form of trenches starting from the first surface of the epitaxial layer on which the emitter chip or LED is arranged transversely to the epitaxial layer plane.

[0054] In other words, the subpixel separation elements are implemented here as recesses, gaps, slots or other structures, which may further be filled with an electrically insulating material. The insulating material is preferably further optically transparent to facilitate optical crosstalk. Here, according to one embodiment, the length of the trench is selected such that the drive control signals to one subpixel do not electrically crosstalk with a second adjacent subpixel of the same pixel. In particular, such trench-like structures provide electrical decoupling by significantly extending the path of current flow, thereby increasing the electrical resistance.

[0055] The optical effect on the emitted light is also related to the region of the epitaxial layer that is more centrally located or towards the second, more distant face of the epitaxial layer, i.e. the depth of the trench is selected such that electrical decoupling is ensured, but on the other hand the trench ends before the region of the epitaxial layer through which light can travel between two adjacent subpixels. The emission direction of the emitter tip extends, for example, transversely to the epitaxial layer, allowing light to exit at the opposite second face.

[0056] According to one embodiment, the trench extends perpendicularly to the epitaxial layer plane. Provided that the trench extends in this way, in another embodiment, the length d1 of the trench is smaller than the total thickness of the epitaxial layer. In this case, the epitaxial layer has at least approximately the same total thickness across the pixel elements and subpixels. In another embodiment, the length d1 of the trench between the pixel elements is the same as the thickness of the epitaxial layer. In other words, the trench extends continuously from the first side to the second side of the epitaxial layer. In another embodiment, the trench extends continuously obliquely into the epitaxial layer at an angle of 0 to 90° to the epitaxial layer plane.

[0057] In one embodiment, each pixel element or subpixel element thereof includes multiple semiconductor layers in a layer sequence, and further includes an active layer for generating light. The active layer may include structures such as quantum wells arranged to generate light. In one embodiment, one or more layers are spread across multiple pixels or subpixels. For example, it may be proposed that the active layer is spread across multiple subpixels of color.

[0058] In one embodiment, the subpixels or pixel elements are electrically contactable and / or drivable independently of one another. For this purpose, contacts may be provided, for example, on the side of the subpixels that is remote from the epitaxial layer. These may be, for example, mechanical contacts, solder connections, clamp connections, etc. It is important here that the subpixels of the individual subpixels are contactable and electrically operable without substantial interaction with the adjacent subpixels of the adjacent subpixels. This is particularly advantageous for detecting the functional or operational state of the subpixels, since diagnostic information can be generated for each individual subpixel individually. Similarly, it is also advantageous to turn on / off individual subpixels without going through the adjacent subpixels. This allows several subpixels to be operated simultaneously at lower light intensities, thereby reducing thermal or other stresses on the subpixels even at higher light intensities.

[0059] According to a further embodiment, the individual sub-pixels are contacted via a carrier substrate, which is intended to provide mechanical stability on the one hand and at the same time to incorporate fine conductor structures for individual contacting of the individual sub-pixels on the other hand. It is also possible to integrate further elements, such as electronic drive and control circuits or driver circuits, into the carrier substrate, in particular a silicon wafer. This may have the same material system, but also a different material system via matching layers. Thus, silicon can also be used as the carrier material. This allows, in particular, circuits for drive and control to be easily implemented on this carrier.

[0060] According to one embodiment, the brightness of the pixel element can be adjusted by turning off or on the individual sub-pixels. Here, it can be mentioned as an advantage that an effective brightness control is already possible with a single off or on. This allows, for example, a significant simplification of the drive control electronics or the control unit. In another example, the brightness of one or more sub-pixels of the pixel element can be additionally adjusted. This allows the brightness in finer gradations and a more accurate adjustment or calibration of the color spectrum by the interaction of different wavelengths of the sub-pixels of the same pixel element. The brightness adjustment can be performed with a PWM drive control. Even in the event of a sub-pixel failure, an equivalent brightness can be ensured by appropriately extending the PWM drive control. Conversely, if there is no problem with the sub-pixel, the PWM drive control can be adjusted to allow the sub-pixel to operate at its maximum efficiency, which may result in less thermal stress and therefore a longer life.

[0061] For example, if eight subpixels are patterned on one pixel element, then it is possible to obtain a 2 3 A luminance dynamic range of (2^3) levels can be realized. In other words, in this modified configuration, the dynamic range can be increased by 2 3 This can be increased by a factor of (2^3), which in turn reduces the complexity of electronic control devices and the associated costs.

[0062] In another aspect, a display is proposed having a plurality of pixel elements as described above and below. According to one aspect, such a display may be an optical semiconductor display for applications in the field of augmented reality or automotive, where small displays with very high resolution are used. Similarly, such a display may be used in wearable devices, such as smart watches or wearables.

[0063] Between two adjacent pixel elements, a pixel element isolation layer is provided. This is configured to electrically isolate adjacent pixel elements for driving control of each pixel element. Furthermore, the pixel element isolation layer is configured to provide optical isolation for light emitted from the pixel elements. A pixel element isolation layer can be understood, first of all, abstractly as any structure or material that isolates two pixel elements from each other. Typically, such pixel elements are arranged in large numbers side by side on a plane, for example a support surface, and are connected to a driving control electronic circuit via contacts. In this way, a display can be formed overall.

[0064] The electrical and electromagnetic isolation is to ensure that pixel elements can be driven independently of neighboring pixel elements and have minimal or no electrical or electromagnetic interaction, especially no optical interaction. This is important for the sole reason that each pixel can be generated independently of the other to display a particular image content on the display. This optical isolation is also necessary to ensure that the individual pixels have sufficient sharpness and contrast or definition with respect to each other on the display.

[0065] In one embodiment, the pixel elements have a common epitaxial layer. The pixel element isolation layer is configured as a trench and extends laterally to the epitaxial layer surface in the light emission direction of the emitter tip. In other words, the pixel element isolation layer is configured as a recess such as a trench, slit, slot, etc., and does not contain a solid material or has a material that is, for example, reflective or absorbing. In one example, the pixel isolation element is filled with an insulating material in which a mirror layer is embedded. The insulating material electrically isolates two adjacent pixels, and the mirror element prevents optical crosstalk. In some configurations, the mirror element also provides for or facilitates collimation of light.

[0066] The pixel element isolation layer is intended to prevent electrical or electromagnetic signals from passing from one pixel element to the other. At the same time, the pixel element isolation layer is intended to ensure that the light emission from a pixel element to an adjacent pixel element is as little as possible or not at all. In one example, the pixel element isolation layer can be formed only by placing two separated pixel elements adjacent to each other during placement, thereby resulting in a corresponding insulating or reflective interface layer. According to one embodiment, the trench is perpendicular to the epitaxial layer plane, and the length of the pixel element isolation layer is equal to or less than the thickness of the epitaxial layer.

[0067] According to further aspects, the pixel element isolation layer has a trench depth greater than the subpixel isolation layer. This has the advantage, among other things, that the increased length of the pixel element isolation layer allows for both electrical and optical isolation. On the other hand, a shallow trench depth between the subpixels provides only electrical isolation, although optical crosstalk is certainly desirable. In some aspects, the pixel element isolation layer has a depth that passes through and isolates the active layer of the second adjacent pixel. Furthermore, the pixel element isolation layer may extend to or just below the emitting surface.

[0068] In another aspect, a method for calibrating pixel elements is proposed. This method is based on the idea that optimal driving should be possible when the display is started up. This means, for example, that defective subpixels are detected as such and then, if necessary, are not further driven. This makes it possible, for example, to avoid error messages or malfunctions. The structure of the pixel element with subpixels allows each subpixel to be driven and tested individually.

[0069] To this end, in a first step, the sub-pixels of the pixel element are controlled, for example by the control electronics or the control unit. In a second step, the defect information of the sub-pixels is detected. In other words, the control electronics may be designed and configured in such a way that malfunctions or defects are detected. For this purpose, for example, the current strength can be measured or other electrical parameters can be evaluated.

[0070] In a further step, the defect information is stored in a storage unit of the control unit. This information can be used, for example, for an optimal driving control by the driving control electronics. For example, if a certain brightness is to be achieved and it is known that a certain sub-pixel is defective, the driving control electronics can appropriately and differentially drive and control adjacent sub-pixels, for example to correct the brightness. As a result, even if a sub-pixel is defective, the intensity of the light emitted by the pixel element will not change at all or will change very little, and will not be noticed by the viewer.

[0071] In another aspect of the method, the drive control, sensing and storage are performed sequentially for all individual sub-pixels of the pixel element. In other words, the drive control electronics may be configured to check successively all sub-pixels available with individually addressable emitter tips to detect the functional state of the entire pixel element. According to one embodiment, this may be done once when the display is switched on or after a certain time has passed.

[0072] An extension of pixelated or other emitters with reduced optical and electrical crosstalk is presented in the following concept.

[0073] In conventional monolithic pixel arrays, in some embodiments, it is common to etch the active zone to separate individual pixels and make them individually addressable. However, the etching process of the active layer introduces defects that can lead to increased leakage currents at the edges on the one hand, and to additional non-radiative recombination on the other hand. The smaller the pixel, the substantially larger the relative damage area. Conventionally, the edges of the etched active zone are passivated in various ways. These include regrowth, deposition of an in situ passivation layer, diffusion of species to shift the pn junction and increase the band gap around the active zone, and wet etch cleaning to remove as much damage as possible.

[0074] According to the proposed principle, a pixel structure is proposed with a material bridge which includes at least the active layer, which makes it possible to reduce the increase in defect density in the region of the active layer.

[0075] Thus, an array of optoelectronic pixels or subpixels includes each pixel or subpixel forming an active zone between an n-type doped layer and a p-type doped layer. According to the proposed principle, between two adjacently formed pixels, the material of the layer sequence is interrupted or removed from the n-type doped side and the p-type doped side up to or into the cladding layer, or up to or at least partially into the active zone. In this way, a maximum thickness d c This results in a material transition of reduced electrical and / or optical conductivity at the material transition.

[0076] According to a second aspect, a method for manufacturing an array of optoelectronic pixels or sub-pixels is proposed, in which in a first step a generally planar layer sequence with n-type and p-type doped layers is provided along the array, and active zones suitable for emitting light are formed between them. Subsequently, between adjacently formed pixels, material of the layer sequence is removed from the n-type and p-type doped sides up to or into the undoped cladding layer or just before or up to the active zone. This removal may be performed by an etching process.

[0077] However, after removal, a material transition remains between adjacent pixels, including the active zone and, optionally, small areas above, below, or on either side. This is due to the maximum thickness d at which the electrical and / or optical conductivity is effectively reduced by the material transition. c Includes.

[0078] The proposed concept allows, on the one hand, the generation of an array of pixels in a planar manner. The etching process removes material, but leaves a material transition between adjacent pixels or subpixels, including the active layer. The etching process therefore does not lead to a high defect density in the area of ​​the active layer, especially in the pixel area. However, the individual pixels or subpixels are optically and electrically isolated from one another. It is therefore proposed to produce a pixel-emitter-array without etching through the active zone, so as to avoid optical and electrical crosstalk as well as a decrease in the performance and reliability of the etched active zone. In this way, etching defects are avoided or the number of defects is effectively reduced.

[0079] In this context, a pixel or subpixel each contains at least one optoelectronic component or LED that emits light when activated. In principle, several subpixels of different colors can be combined into a pixel, also called a picture element.

[0080] According to one configuration, the removed material may be at least partially replaced by a filling material, in other words, after partial removal of a material, in particular an n-type or p-type doped layer, the resulting space is refilled to obtain a planar surface, which may provide the functions of mechanical support, bonding and / or electrical insulation.

[0081] According to a further configuration, the removed material may be at least partially replaced with a material that has a relatively small band gap and thus absorbs the light of the active zone. This effectively reduces optical crosstalk. Alternatively, at least a part of the removed material may be replaced with a material that has a high refractive index, in particular a refractive index higher than that of the cladding layer or the active zone. This effectively creates a high-index interface that prevents the fundamental mode from propagating. Furthermore, alternatively, in one embodiment, a light-absorbing material and / or a material with a high refractive index may be applied to the respective material transition. In this way, such a material influences the waveguide of the material transition, thereby preventing crosstalk.

[0082] According to a further configuration, a material having a high refractive index can be formed by diffusing or injecting a material that increases the refractive index into the filling material, in particular into the respective cladding layer, thus effectively improving the array with respect to crosstalk in a simple manner that does not require etching.

[0083] Another aspect concerns the reduction of electrical crosstalk. On that basis, materials that increase the light absorption and / or increase the electrical resistance can be introduced into the active zone of the respective material transition. The corresponding method is relatively easy to carry out. In this way, the array can be effectively improved with respect to crosstalk in a simple manner that does not require etching.

[0084] According to a further configuration, at least one optical structure, in particular a photonic crystal and / or a Bragg mirror, may be fabricated along, on or within the material transition. These are particularly useful elements for reducing optical crosstalk. Such photonic crystals or structures may also be used to improve the collimation of light.

[0085] In another embodiment, an electric bias may be applied to the two main surfaces of the material transitions by two mutually opposing electrical contacts, generating an electric field through each material transition. This is an effective element for reducing optical crosstalk. The electric field in this case is generated by applying a bias. This bias may be, for example, derived from or derived from a voltage for operating the pixel. However, in some embodiments, such a field may be determined by intrinsic material properties. Thus, in one embodiment, it is proposed to generate an electric field in each material transition by n-type doped material and / or p-type doped material applied or grown on at least one of the two main surfaces of the material transition. In this way, the electric field is introduced in the corresponding array, without the need to apply a voltage.

[0086] According to a further configuration, the exposed main surfaces of the material transitions and / or the exposed surface areas of the pixels may be electrically insulated and passivated, in particular by a respective passivation layer with silicon dioxide. In this way, a current flow through selected regions of the array, in particular through the material transitions acting as a waveguide, can be effectively and specifically prevented. By electrically contacting the main surfaces of the pixels by means of a contact layer, vertical optical structure elements can be produced, where the main surfaces on one side can be electrically connected to each other via a shared layer. According to a further configuration, the materials and / or the material transitions between one pixel and its neighboring pixels can be formed differently from each other, in particular depending on the direction.

[0087] OLEDs have been proposed in particular for displays with pixel-sized active light sources. They suffer from low brightness and limited lifetime. As an alternative to self-emitting light sources with long lifetime, high efficiency and fast response, there are LEDs arranged in a matrix, for example based on GaN or InGaN. These are particularly suitable for display arrangements with high packing density to form high resolution displays.

[0088] The starting point of this discussion is a display arrangement comprising an IC substrate part and a monolithic pixelated optochip mounted on said part. In this document, a monolithic pixelated optochip is understood to be a matrix-like arrangement of light-emitting optoelectronic components formed on a coherent chip substrate by a common manufacturing process. The IC substrate part comprises a monolithic integrated circuit, which is also obtained from a common manufacturing process. Furthermore, on the top side of the IC substrate part facing the monolithic pixelated optochip, IC substrate contacts are present, which are arranged in a matrix.

[0089] The monolithic pixelated optochip comprises a semiconductor layer sequence with a first semiconductor layer with a first doping and a second semiconductor layer with a second doping, the polarity of the charge carriers of the first semiconductor layer being different from the polarity of the charge carriers of the second semiconductor layer. Preferably, the first and second semiconductor layers extend in the lateral direction of the entire monolithic pixelated optochip. In one configuration, the first semiconductor layer may have a p-type doping and the second semiconductor layer an n-type doping. Reverse doping is also possible, as is the use of several partial layers of the same doping for at least one of the semiconductor layers which differ in terms of doping strength and / or semiconductor material. In particular, the semiconductor layer sequence may form a double heterostructure. Between the first and second semiconductor layers there is a region with a junction in which a light-emitting active zone is formed during operation of the display. In one possible configuration, the active zone is located in a doped or undoped active layer, which is interposed between a first semiconductor layer and a second semiconductor layer and has, for example, one or more quantum well structures.

[0090] The individual light-emitting optoelectronic light sources of the pixelated optochip respectively represent LEDs arranged in a matrix, each having an LED back surface facing the IC substrate part and a first light source contact adjacent to and in contact with the first semiconductor layer and electrically connected to a respective one of the IC substrate contacts. In other words, each LED of the pixelated optochip is formed so as to constitute an area of ​​one of the above-mentioned active layers. Between adjacent LEDs, the active layer or other of the above-mentioned layers may be interrupted in order to avoid crosstalk.

[0091] The inventors have realised that a highly packed and manufacturably simplified display arrangement can be realised if the projected area of ​​the first light source contact on the LED back surface corresponds at most to half the area of ​​the LED back surface and if the first light source contact is laterally surrounded by a back absorber, where lateral is understood to mean perpendicular to the stacking direction which is determined by averaging the surface normals of the semiconductor layer sequence.

[0092] The first light source contact, applied over a small area that is significantly smaller than the pixel area of ​​the associated LED, narrows the current path in the semiconductor layer stack laterally. As a result, the lateral expansion of the active zone is limited to μm dimensions, and the individually controllable LEDs are separated from each other by local recombination zones in the semiconductor layer stack. Here, the pixel size of each LED, defined as the maximum diagonal area of ​​the LED back surface, is advantageously selected to be less than 1500 μm, preferably less than 900 μm, in particular in the range from 200 μm to 1200 μm. Moreover, the preferred first light source contact is small, and in an advantageous configuration, the projected area of ​​the first light source contact on the LED back surface occupies at most 25%, preferably at most 10%, of the area of ​​the LED back surface.

[0093] In order to limit the lateral expansion of the active zone, the first and second semiconductor layers are preferably 10 4 Sm -1 Smaller than 3·10 3 Sm -1 less than 10, more preferably 3 Sm -1 It is further advantageous that the layer thickness of the first semiconductor layer in the stacking direction is at most 10 times, preferably at most 5 times, the maximum diagonal of the first light source contact in the lateral direction.

[0094] In a further design, the first light source contact on the monolithic pixelated opto-chip is not directly adjacent to the associated IC substrate contact. Instead, below the first light source contact, relative to the stacking direction, is an actual opto-chip contact element with a larger cross-sectional area than the first light source contact. This measure simplifies the positioning and the interconnection of the monolithic pixelated opto-chip on the IC substrate component, without exacerbating the lateral restriction of the current path.

[0095] According to the invention, the area of ​​the first light source contact of the compact structure is used to place a back absorber that reduces the optical crosstalk between adjacent LEDs. In particular, downward electromagnetic radiation emitted at an angular position from the active zone is absorbed as long as it exceeds a limiting angle with respect to the stacking direction. A patterned layer with silicon, germanium and gallium arsenide is preferred as the material of the back absorber. It is also possible to incorporate particles of graphene or carbon black into the back absorber.

[0096] The back absorber laterally surrounds and extends from the first light source contact, the back absorbers of adjacent LEDs being adjacent to each other and preferably integrally formed. In one configuration, the back absorber extends in the stack direction at least to the first semiconductor layer. In a further design, a part of the back absorber extends into the appropriately patterned first semiconductor layer to shield the boundary area between adjacent LEDs. For this purpose, a reflective light blocking material such as a reflector material such as aluminum, gold or silver or a dielectric material with a refractive index smaller than that of the first semiconductor layer can additionally or alternatively be used. In a further design, the back absorber not only performs an optical function but also serves as an electrical insulator that limits the current path laterally.

[0097] The display arrangement structure has a second light source contact in the stacking direction on the second semiconductor layer of each LED, which is made of a transparent material such as ITO (indium tin oxide) and is electrically connected to a transparent, flat extended contact layer on the front side of the pixelated optochip. In an advantageous configuration, the second light source contact is formed by the large-area contact layer itself, so that the entire second light source contacts of the matrix-arranged LEDs can be applied as a common area contact. In an alternative configuration that further reduces the optical crosstalk, the second light source contacts are adjacent in contact with each one of the contact layers, and the second light source contacts of adjacently arranged LEDs are separated from each other by a front absorber in a lateral direction pointing perpendicular to the stacking direction. The front absorber may be made of a material that absorbs the electromagnetic radiation emitted from the active zone or a material that reflects this radiation. Additionally or alternatively, the front absorber may act as an electrical insulator and contribute to the lateral restriction of the current path in order to localize the recombination zone in the range of μm dimensions.

[0098] In a further possible design, the front absorber extends in the opposite direction to the stacking direction for at least a portion of the second semiconductor layer.Furthermore, the bottom surface and / or the top surface of the second light source contact and / or the contact layer and / or the top surface of the second semiconductor layer may have an optically effective patterning for improving light extraction.

[0099] In the proposed method for producing a display arrangement structure, an IC substrate part having a monolithic integrated circuit and IC substrate contacts arranged in a matrix is ​​electrically connected to a monolithic pixelated optochip. In the production of the monolithic pixelated optochip, a semiconductor layer sequence is preferably epitaxially grown having a first semiconductor layer with a first doping and a second semiconductor layer with a second doping, the polarity of the charge carriers of the first semiconductor layer being different from the polarity of the charge carriers of the second semiconductor layer, the semiconductor layer sequence defining a stacking direction. Furthermore, the pixelated optochip comprises LEDs arranged in a matrix, each LED having a back surface facing the IC substrate part and a first light source contact adjacent to and in contact with the first semiconductor layer and electrically connected to a respective one of the contacts of the IC substrate. According to the invention, the first light source contact is formed such that its projected area with a surface normal perpendicular to the stacking direction occupies at most half the area of ​​the LED back surface. Furthermore, the first light source contact is surrounded by a rear absorber in a lateral direction perpendicular to the stacking direction.

[0100] In the following, the invention will be explained in more detail with reference to the drawings. [Brief description of the drawings]

[0101] [Figure 1] FIG. 1 illustrates an example of an optoelectronic device including an LED semiconductor element and a dielectric filter in accordance with some aspects of the proposed principles. [Figure 2A] FIG. 1 illustrates an example of an optoelectronic device having an array of semiconductor elements. [Figure 2B] FIG. 1 illustrates an example of an optoelectronic device having an array of semiconductor elements. [Figure 3A] 1A-1C illustrate two further example configurations of an optoelectronic device having multiple LEDs, according to some embodiments. [Figure 3B]1A-1C illustrate two further example configurations of an optoelectronic device having multiple LEDs, according to some embodiments. [Figure 3C] 1A-1C illustrate two further example configurations of an optoelectronic device having multiple LEDs, according to some embodiments. [Figure 3D] 1A-1C illustrate two further example configurations of an optoelectronic device having multiple LEDs, according to some embodiments. [Figure 3E] 1A-1C illustrate two further example configurations of an optoelectronic device having multiple LEDs, according to some embodiments. [Figure 4] FIG. 1 shows a simplified structure of a display in which pixel elements are arranged in rows and columns. [Diagram 5] FIG. 2 is an enlarged partial view of a pixel element and sub-pixels of the display according to the previous figure. [Figure 6] FIG. 1 is a schematic side cross-sectional view of a portion of a display according to a proposed concept, having a pixel element isolation layer and a sub-pixel isolation element; [Figure 7] 5A-5C illustrate steps of a method for calibrating a pixel element having a pixel element isolation layer and a sub-pixel isolation element. [Figure 8] FIG. 2 shows a first example configuration of a pixel array in accordance with some aspects of the proposed principles, where adjacent pixels are connected by a thin bridge of material. [Figure 9] FIG. 13 is a diagram showing a second example configuration of a pixel array in which two LEDs are connected by a material bridge. [Figure 10A] FIG. 11 shows a third example configuration of a pixel array having some aspects according to the proposed principles. [Figure 10B] FIG. 13 shows energy curves for a material bridge associated with the example configuration of the previous figure. [Figure 11] FIG. 11 shows a fourth example configuration of a pixel array having some aspects according to the proposed principles. [Figure 12A] FIG. 13 is a diagram illustrating a fifth configuration example of a pixel array. [Figure 12B]FIG. 1 illustrates one configuration of a pixel array having side-by-side LEDs, a material bridge, and additionally including an outcoupling structure in accordance with some aspects disclosed herein. [Figure 13] FIG. 13 is a diagram illustrating a sixth configuration example of a pixel array. [Figure 14] FIG. 13 is a diagram showing a seventh example configuration of a pixel array having a further aspect. [Figure 15] FIG. 13 is a diagram illustrating an eighth configuration example of a pixel array. [Figure 16] FIG. 13 is a diagram illustrating a ninth configuration example of a pixel array. [Figure 17] 1A-1C show an example configuration with various steps of a method for manufacturing a pixel array according to a proposed concept. [Figure 18] 1 illustrates, in cross-sectional view, an example display device configuration comprising a monolithic pixel array with a monolithic IC in accordance with some aspects of the proposed concepts. [Figure 19] The above-mentioned example configuration of the proposed display device is shown in cross-section with possible light paths depicted. [Figure 20] 1 shows a cross-sectional view of a second example of the proposed display device with a monolithic pixel array and ICs. [Figure 21] 4 shows a fourth configuration of the proposed display device in cross-section, with additional light directing means.

[0102] Detailed Description The following configurations are primarily directed to display devices and displays, and thus to base units and modules with monolithically integrated optoelectronic structural elements. However, the invention is not limited to this application or to the monolithic components shown. Rather, the presented principles and configurations can be generalized to be suitable for a wide range of electronic applications and applications where scaling is required. In particular, the aspects relating to directional emission can be combined with the aspects relating to pixel redundancy and perspective of FIG. 18. The same applies to the configurations of FIGS. 18-21, whose principles are suitable for combination with the configurations of FIGS. 5 and 6 or 8-16, for example. The examples shown here can also be combined with mirrors as in FIG. 1 or 2B. This applies not only to the configurations, but also to the features of these aspects, which are mainly described in the claims.

[0103] In monolithic displays, some applications require a defined radiation pattern, since the individual optoelectronic structural elements are separated by a defined distance. Other applications requiring a Lambertian radiator can be easily modified based on directional radiation by adding a diffuser element. Thus, a solution that improves the radiation pattern of the LED, makes it directional, and then attaches a dielectric filter with additional reflective surfaces is a good starting point for various monolithic display applications.

[0104] 1 shows a schematic cross-sectional view of an optoelectronic component 10. In the following, the structure, mode of operation and manufacture of the optoelectronic component 10 are described.

[0105] The optoelectronic component 10 comprises a pixel 11 with an optoelectronic component in the form of an LED, also called LED semiconductor component 12. The LED semiconductor component 12 comprises an active zone 13 arranged to generate light and has a height in the range of 1-2 μm. The LED semiconductor component 12 has a first main surface 14, a second main surface 15 opposite the first main surface 14 and, for example, four side surfaces 16. Each of the side surfaces 16 is chamfered in a lower region and forms an angle α of less than 90° with the first main surface 14 in this chamfered region. The active zone 13 is located at the height of the chamfered region.

[0106] A layer 17 containing a random or deterministic topology is present on the first main surface 14 of the LED semiconductor element 12. Alternatively, a corresponding topology may be etched into the first main surface 14 of the LED semiconductor element 12.

[0107] 1, a further layer having a different refractive index than layer 17 is deposited on layer 17. Layer 17, in combination with the layer deposited thereon, causes light not emitting perpendicular to first main surface 14 from LED semiconductor element 12 to be deflected in other directions, for example by reflection at the interface between layer 17 and the layer deposited thereon. Furthermore, the layer deposited on layer 17 has the function of providing a smooth surface onto which a dielectric mirror layer can be applied.

[0108] Above layer 17 and the smooth-top layer thereon is a dielectric filter 18 consisting of a stack of dielectric layers configured to transmit only the light components within a predefined cone angle and reflect a flatter beam, the cone angle being oriented with its axis perpendicular to the first major surface 14 of the LED semiconductor device 12.

[0109] Furthermore, a reflective material 19, which is electrically conductive and which is, for example, metallic, is deposited on all side surfaces 16 of the LED semiconductor element 12. The reflective material 19 is in contact with the n-doped regions of the LED semiconductor element 12. Below the second main surface 15 of the LED semiconductor element 12 there is a reflective layer 20, which is also electrically conductive. The reflective layer 20 is in contact with the p-doped regions of the LED semiconductor element 12.

[0110] The chamfered side 16 of the LED semiconductor element 12 is covered with an electrically insulating first material 21. The electrically insulating first material 21 is disposed between material 19 and layer 20 and provides electrical insulation between the n-type and p-type contacts of the LED semiconductor element 12. Additionally, material 21 has a low refractive index so as to reflect light emitted from the LED semiconductor element 12 at the chamfered side 16.

[0111] The layer made of the reflective material 19 is formed so as to completely surround the pixel 11 in the horizontal direction and to extend over the entire pixel 11 in the vertical direction, i.e., the layer made of the reflective material 19 extends from the underside of the electrically insulating first material 21 covering the LED semiconductor element 12 to the upper side of the dielectric filter 18. Light exiting the pixel 11 in the lateral direction is reflected back by the reflective material 19, so that highly directional light can only exit from the upper side of the optoelectronic device 10.

[0112] 2A and 2B show an optoelectronic component 30 in a schematic top view and a cross-sectional view, respectively. The optoelectronic component 30 comprises a number of pixels 11, as described above. The pixels 11 are arranged in an array and are separated from one another by a reflective material 19 that extends in a grid-like manner through the optoelectronic component 30. On one side of the optoelectronic component 30, an external terminal 31 is provided, by means of which the n-type regions of the LED semiconductor components 12 can be contacted from outside the optoelectronic component 30. In this example configuration, the anodes of the LED semiconductor components 12 are connected to one another, which is called a common anode arrangement. A common cathode arrangement, in which the cathodes are connected to one another, is also possible.

[0113] The array of pixels 11 is disposed on a carrier 32. The carrier 32 has p-type contact terminals 33 for each p-type contact, allowing the p-type contacts of each pixel 11 to be individually driven and controlled, for example by an IC. The optoelectronic device 30 allows for very high pixel densities. Furthermore, the monolithic design allows for a wide scaling of the array structure.

[0114] 3A, 3B and 3C show an optoelectronic component 40 in plan view from above and in cross-section, respectively, with two different variants shown in FIGS. 3B and 3C.

[0115] The optoelectronic component 40 includes a plurality of pixels 11 that are not disposed directly adjacent to one another as in the optoelectronic component 30 shown in Figures 2A and 2B, but are spaced apart. Each pixel 11 is completely covered on all four sides by the reflective material 19 in the optoelectronic component 40. The spaces between the pixels 11 are filled with an electrically insulating second material 41, e.g., a potting material.

[0116] The n-contacts of the LEDs in the pixels 11 may be connected below, above or between the top and bottom of the optoelectronic element 40. In FIG. 3B, the pixels 11 are arranged on a carrier 42 incorporating n-contact terminals 43 that connect the n-contacts of the pixels 11 to each other. The carrier 42 further comprises p-contact terminals 44 for each p-contact, so that the p-contacts of each pixel 11 can be individually controlled. The carrier 42 may further incorporate an IC. The spaced arrangement of the LED semiconductor elements 12 in the optoelectronic device 40 further allows for contact connections that allow both the n-contacts and the p-contacts of each pixel 11 to be individually controlled.

[0117] Fig. 3C shows an alternative variant in which the carrier 45 only comprises individual p-contact terminals 46 for each pixel 11 arranged on said carrier 45. Of course, it is also possible to interchange the p-doped and n-doped layers. On the electrically insulating second material 41, conductor tracks 47 are arranged in a grid, which interconnect the n-contacts of the pixels 11 and are routed to external terminals 48 arranged on one side of the optoelectronic device 40, as shown in Fig. 3A.

[0118] Fig. 3D shows a configuration in which a dielectric layer 19' is formed on two opposite sides of a substantially rectangular semiconductor element or LED 12. From the plan view of Fig. 3E it can be seen that the dielectric elements 19, 19' alternately encapsulate the semiconductor element 12 and the dielectric filter 18. The dielectric elements 19 and 19' have a different configuration. The element 19' comprises at least one electrically conductive partial area, for example in the form of a surface along the side wall of the LED 12 or in the form of a number of strips extending along the side wall. The element 19 is not electrically connected to the LED 12, i.e. does not contribute to the current supply to the element 12.

[0119] In Fig. 3D, the direction of the current is indicated by the arrows. The current flows either up to the surface or from there through the dielectric filter 18 into the semiconductor layer and then to the active region. Alternatively, a conductive partial area of ​​the dielectric element may be connected to a contact layer of the LED. The contact layer may be arranged, for example, between the dielectric filter and the LED and may be configured as a cover electrode, as shown in Fig. 3A by the thin unlabeled layer between elements 12 and 18. In either case, the contact layer serves to spread the current over the entire surface.

[0120] The following compositions relate to various aspects of processing that can be used on semiconductor structures to improve their properties or to create new applications or possibilities.

[0121] FIG. 4 shows a simplified schematic diagram of an electronic display 10, as is often used, for example, in monitors, televisions, display panels or small devices such as smart watches or smartphones, to illustrate the embodiment of a pixel element with electrically isolated and optically coupled subpixels. In this case, it is known that the basic structure is realized by arranging a number of pixels or pixel elements 12 closely next to each other in a plane. The pixel elements 12 are arranged in rows and columns and can be electronically driven individually. The driving control is performed in such a way that not only the light intensity of the pixel elements 12 but also the color tone and the emission wavelength are changed in this way. In the latter case, each pixel often contains three subpixels, each of which is arranged to emit a different wavelength. The pixel elements 12 are often applied on a substrate or carrier structure 14, which in this embodiment mainly has to ensure the mechanical stability of the arrangement.

[0122] In this figure it is easy to see that to produce a sufficiently high resolution, millions of such pixel elements 12 must be not only mechanically arranged in close spatial packing, but also electrically connected. At the same time, defective pixels 12 are often visible as dark dots between active pixels. On the one hand, the density and resolution of such displays are increasing, especially with very small dimensions, for example for LEDs, on the other hand, the most error-free functioning and the production of the lowest possible defect rate are required.

[0123] In Fig. 5, the section AA shown in Fig. 4 is enlarged in order to be able to more precisely illustrate the characteristics of the solution described here. Thus, a substrate 14 is shown which contains the drive control elements and at the same time serves as a carrier structure for the pixels. On top of the substrate 14, the individual pixel elements 12 are provided, here of rectangular shape and of the same size. These identical sizes of the pixel elements 12 are often advantageous for manufacturing reasons, but according to an embodiment they may also be configured with different shapes or sizes. In the example shown here, the pixel elements 12 have a length l1 and a width b1. Between the pixel elements 12, a pixel element isolation layer 16 is provided. The pixel element isolation layer 16 is in the range of a few μm, for example in the range of 2 μm to 100 μm.

[0124] The pixel element isolation layer 16 is configured such that adjacent pixel elements 12 are electrically isolated with respect to drive control of each pixel element. Figure 6 shows a cross-sectional view of a section of a pixel element. The pixel elements 12 are separated by the pixel element isolation layer 16 and each contains a subpixel 18. The pixel element isolation layer 16 provides electrical and optical isolation between the pixel elements 12 to prevent light emitted from one pixel element 12 from penetrating into and being emitted from an adjacent pixel element 12 due to optical crosstalk.

[0125] In the pixel element 12, a further subdivision according to the invention into sub-pixels 18 for selected pixel elements 12 is shown here by way of example. The sub-pixels 18, also called so-called fields, here have the same size and shape. The length l2 of the sub-pixels 18 is defined, and according to one embodiment the length l1 of the pixel element 12 can be obtained from a multiple of the length l2 of the sub-pixels 12 of the same size, possibly including gaps. Similarly, the width b2 of the sub-pixels is shown, and again according to one embodiment the width b1 of the pixel element can be obtained from approximately a multiple of the width b2 of the respective sub-pixels 18 of the same size, possibly including gaps. In the figures selected here, the subdivision of the pixel element 12 into sub-pixels 18 or so-called fields is shown only for one pixel element 12. However, the patterning is applicable to all pixel elements 12 arranged in the display 10.

[0126] Furthermore, between two adjacent subpixels 18 of the same pixel element 12, a subpixel separation element 20 is provided. The subpixel separation element 20 is configured to provide electrical isolation with respect to the drive control of the associated subpixel (length l2) (see FIG. 6). The subpixel separation element 20 is further configured to allow optical coupling or optical crosstalk with respect to the light emitted by the subpixels 18. In other words, photons or light from one subpixel 18 in one pixel element 12 may crosstalk to one or more subpixels 18 present in the same pixel element 12, but may not crosstalk between two pixel elements 12.

[0127] For example, the generation of different colors that the pixel element 12 can emit can be realized by combination of the basic colors red, green and blue. As a result, the pixel element 12 can include sub-pixels 18 that can emit light of different wavelengths. In FIG. 5, a total of nine sub-pixels 18 are exemplarily marked with the initial letters A to K. According to an embodiment, the sub-pixels A, D and G are configured as red LEDs, the sub-pixels B, E and H as green LEDs, and the sub-pixels C, F and K as blue LEDs. For example, if it is desired to emit red light from the pixel element 12, the drive control electronic circuit drives and controls the sub-pixels A, D and G simultaneously. Optionally, the drive control electronic circuit can test whether all the sub-pixels A, D and G are functioning properly. In this way, the desired brightness can be set.

[0128] For example, even if any of the subpixels A, D or G is defective, the remaining pixel can still be driven normally since they are electrically isolated. However, due to the optical crosstalk made possible by the subpixel separation element 20, the missing light of the defective subpixel 18 can be compensated for by the adjacent subpixels 18. That is, as long as one subpixel 18 of the same color in a group is functional and the remaining subpixels 18 in the group are defective, the remaining functional subpixels 18 can compensate for the failure of the defective subpixel, thus ensuring the functionality of the pixel element 12 by redundancy. As an example, optical crosstalk can also occur between several subpixels in the pixel element 12. As an alternative arrangement, for example, three subpixels 18 each can be assigned to one of the basic colors red, green or blue. Examples of this are groupings such as A / B / C, D / E / F and G / H / K. However, a diagonal assignment is also possible, in which case optical crosstalk can be advantageously possible.

[0129] FIG. 6 shows a cross-sectional view of a partial region of the display 10. In the lower part of the figure, a substrate 14 is shown, which is intended in particular to provide a sufficiently mechanically stable carrier structure for accommodating other structural elements. According to an embodiment, this can be a wafer of silicon ICs. The substrate 14 can furthermore comprise driver or control electronics (not shown) and various electrical terminals. These can be realised, for example, by conductor structures in an integrated circuit. Furthermore, contact structures 24 are provided which can be used to control the sub-pixel regions 26. In the example shown, the sub-pixel regions 26 are arranged directly adjacent to the contact structures 24. Via the contact structures 24, the emitter tips 26 can be individually and selectively controlled by the control electronics.

[0130] The epitaxial layer 26 comprises, for example, different layers which in particular enable the functionality of a light-emitting diode. For example, the pn junctions may be implemented by correspondingly differently doped layers or may comprise one or more quantum well structures. Schematically and for the sake of simplicity, the area of ​​the pn junctions 28 is shown here with dashed lines. Additionally, the structures of the pixel element 12 and the subpixels 18 are introduced into the epitaxial layer 26.

[0131] In detail, the individual pixel elements 12 can be identified via pixel element isolation layers 16. Each of them has a length l1 corresponding to the distance between two pixel element isolation layers 16. In this case, the pixel element 12 can be divided into three sub-pixels 18 in the longitudinal direction. Each of these sub-pixels 18 has a length l2. Sub-pixel isolation elements 20 are arranged between the individual sub-pixels 18.

[0132] In the illustrated example, the pixel element isolation layer 16 and the subpixel isolation element 20 are each configured as a structure such as a trench. This means that the pixel element isolation layer 16 and the subpixel isolation element 20 are each introduced into the epitaxial layer 26 as a trench-like, gap-like, or other structure, for example, by an etching process. An electrically insulating material, for example, SiO2, is then deposited in the trench. At that time, for example, the trench depth d1 of the pixel element isolation layer 16 is selected to be larger than the trench depth d2 of the subpixel isolation element 20 to determine the electrical and optical properties of these trenches. This allows optical crosstalk between the subpixels 18 to be achieved by reducing the trench depth d2 of the subpixel isolation element 20.

[0133] Meanwhile, between two pixel elements 12, the trench d1 in the pixel element isolation layer 16 is deepened to prevent both optical crosstalk 30 and electrical crosstalk. According to one embodiment, the trench depth d2 of the subpixel isolation element 20 is selected to pass through the region of the pn junction 28, which advantageously prevents two adjacent subpixels 18 or associated emitter tips 22 from interacting electrically and / or from generating electrical or optical crosstalk.

[0134] In the above example, the pixel element isolation layer 16 extends through the active layer to the edge of the opposite emitting surface, but does not cut through said surface. Thus, the area close to the surface may be formed as a common contact potentially connecting all pixels and sub-pixels. Additionally, the pixel element isolation layer 16 may include a mirror layer to optically deflect light generated by the pixel. In the example of FIG. 133, the sub-pixel isolation element 20 is also shown extending through the active layer, but terminating shortly thereafter. This prevents electrical crosstalk, but not optical crosstalk. Depending on the design and manufacturing parameters, the sub-pixel isolation element 20 may extend only as far as the active layer, or slightly into it.

[0135] In the present configuration, the pixel element isolation layer 16 and the subpixel isolation element 20 are configured as trenches with substantially vertical sidewalls, but the invention is not limited thereto. Other shapes may be purposefully selected to provide additional functionality, such as light collimation or light guidance. An example in this regard may be sloping sidewalls of the pixel element isolation layer 16.

[0136] 7 shows a method 100 according to the invention for calibrating a pixel element 12. In this regard, in a first step 110, the sub-pixels 18 of the pixel element 12 are driven as described above and below in order to enable a test of their function. This can be done, for example, by control signals of a drive control electronic circuit, which may then enable individual contact connections of the individual sub-pixels 18. In a subsequent step 120, defect information of the sub-pixels 18 is detected. In other words, information is generated here as to whether the sub-pixels 18 are functioning correctly or not.

[0137] Such defect information may for example be a flag or a specific value containing information regarding the correct functioning of the sub-pixel 18. This defect information may for example be stored in a storage unit of the drive control electronics according to a next step 130, so that the defective sub-pixel can be corrected by appropriately adjusting the drive control signals of the associated same-wavelength sub-pixels to achieve correct functioning of the whole pixel element 12.

[0138] In one example, the subpixel separation elements 20 may be configured to allow optical crosstalk between subpixels 18 of the same color or wavelength, and the subpixel separation elements 20 are configured to provide optical separation between subpixels 18 of different colors or wavelengths.

[0139] A close-up view of a pixelated or other emitter in which optical and electrical crosstalk between the pixels of the array is prevented by a pixel structure with a material bridge is shown in Figure 8. This shows in cross-section a section of an array A in which two adjacent optoelectronic pixels P are connected by a material bridge.

[0140] The array A has two generally planarly manufactured optoelectronic pixels P in the form of vertical LEDs. Each pixel P comprises an n-doped layer 1, a p-doped layer 3 and an active zone 5 suitable for emitting light. Between the two formed pixels P, material of the layer sequence was removed from the n-doped and p-doped sides. The maximum thickness d including the active layer 5 and the thin cladding layer 7 is c Only a thin material transition 9 of thickness d remains. From a manufacturing point of view, the cladding layer can be made of the same material as layers 3 or 5. This material transition is significantly longer than the thickness d c are selected such that electromagnetic waves do not propagate in the material transition. In this way, optical modes are suppressed. In other words, the electrical and / or optical conductivity of the material transition 9 in FIG. 8 is effectively reduced in the horizontal direction.

[0141] The two main surfaces of the material transition 9 exposed as a result of the removal of the material of the layer sequence and the exposed surface area 11 of the pixel P are electrically insulated and passivated by a respective passivation layer 13, in particular having silicon dioxide. Furthermore, the areas from which the material of the layer sequence has been removed are filled with a filling material 15. Finally, the two main surfaces of the pixel P are electrically contact-connected by a contact layer 33, which may form edge contacts. The contact layer 33 may comprise a transparent material, for example ITO, so that light generated or received in the pixel P passes through the transparent material.

[0142] The active zone 5 contains one or more quantum wells or other structures whose band gap is tuned to the desired wavelength of emitted light. cis selected to prevent all fundamental modes from propagating along the active zone 5 of the material transition 9 to the next pixel P. The maximum thickness d c depends on the refractive index difference between the active zone 5 of the material transition 9 corresponding to the waveguide and the cladding layer 7. In general, this means that it is desirable for the material transition to be as thin as possible. On the one hand, this makes crosstalk of optical modes difficult, since no waves can propagate horizontally. On the other hand, the maximum thickness d c The small thickness of the active zone 5 makes it more difficult for further electrical crosstalk to occur. The thin cladding layer 7 surrounding the active zone 5 typically exhibits a high sheet resistance and can only carry small currents. Further thinning again increases the resistance, thereby reducing electrical crosstalk.

[0143] Furthermore, the maximum thickness d c depends on the refractive index and the thickness of the active zone 5, where the maximum thickness d c is equal to or greater than the thickness of the active zone 5. c also depends on the distance between adjacent pixels P. The longer the distance, the greater the maximum thickness d c The maximum thickness d can be increased. c The recommended range is 100 nm to 4 μm, and particularly 100 nm to 1 μm.

[0144] The thickness of each layer shown in Figure 8 depends on the materials used, including the doping material, the concentration vs. depth doping profile, the sidewall angle, the pixel size, the gap between pixels, and the size of the entire array. The lower limit of the total thickness is about 100 nm.

[0145] Suitable material systems for the pixel P are, for example, In(Ga,Al)As(Sb,P), SiGe, Zn(Mg,Cd)S(Se,Te), Ga(Al)N, HgCdTe. Suitable materials for the contact layer 33 include, for example, metals such as Au, Ag, Ti, Pt, Pd, Cr, Rh, Al, Ni, either alone or in alloys with Zn, Ge, Be. Furthermore, by using this material as the filler material 15, in addition to the filler function, it can also serve as a binding material. Furthermore, materials with electrical conductivity can be expected to have properties such as reflectivity. Transparent conductive oxides, for example ZnO or ITO (InSnO), can also be used as the contact layer 33 for contact connection, providing a common contact to either the p-side or the n-side of the array.

[0146] As transparent insulators, dielectrics such as, for example, fluorides, oxides and nitrides of Ti, Ta, Hf, Zr, Nb, Al, Si, Mg can be used. This material can be used for the passivation layer 13. Furthermore, this material can be used as a filling material 15, in which case this material can also act as an electrical insulator in addition to the filling function. The values ​​of the refractive index of the active zone 5 and of the cladding layer 7 depend entirely on the materials used.

[0147] Maximum thickness d c also depends on the refractive index of the dielectric created by the passivation layer 13 and / or the filling material 15. The smaller the refractive index difference between the active zone 5 and the dielectric, the smaller the maximum thickness d c can be made larger.

[0148] 9 shows a second example of the configuration of a pixel array A in a cross-sectional view. The array A shown in FIG. 9 here differs from the array A shown in FIG. 8 in that a light-absorbing material 17 having a relatively small band gap at least partially fills the area of ​​the removed material of the layer sequence. Furthermore, the light-absorbing material 17 is directly adjacent to the material transition 9, since no passivation layer 13 is formed on the material transition 9. Only the exposed surface areas 11 of the pixels P are electrically insulated and passivated by the respective passivation layer 13. The material of the passivation layer may for example comprise silicon dioxide, so that no electrical short circuit occurs between the materials 3 and 17.

[0149] Alternatively - not shown there - in Fig. 9 one side of the material transition 9 between two pixels P - in Fig. 9 only the upper or lower side - is filled with a light absorbing material 17. On the other hand, a filling material 15 is formed in the material transition 9, for example with a passivation layer 13 in between. The use of a light absorbing material 17 further suppresses optical crosstalk. The light absorbing material 17 between the pixels P absorbs the light exiting from the active zone 5 in the region of the material transition 9, thereby reducing the waveguide. An attenuation of the waveguide occurs along the material transition 9.

[0150] Suitable light absorbing material 17 is a metal, alloy, dielectric or semiconductor with a band gap smaller than the band gap of the material transition 9 that initially serves as a waveguide. This results in a higher energy of the light, which is then absorbed by the material 17. For example, a floating eye can be used, which absorbs red wavelengths by 50%. The light absorbing material 17 is grown in the material transition 9, for example by creating an epitaxial layer by CVD (chemical vapour deposition) or PVD (physical vapour deposition). Here, the light absorbing material 17 is applied or grown on top of the cladding layer 7.

[0151] 10A shows a third configuration example of a pixel array A according to the invention in a cross-sectional view. In place of the material of the layer sequence of the pixel array removed from the n-doped side and / or the p-doped side, a material 19 is formed which has an increased refractive index compared to the removed material, in particular the doped material or filling material 15, but which preferably is not greater than the refractive index of the cladding layer 7 or the active zone 5. This also attenuates the waveguide at the material transition 9. Finally, the layer sequence on the substrate 35 is covered by a protective top layer 37.

[0152] The increased refractive index material 19 is epitaxially grown in the material transition 9, for example by chemical or physical vapor deposition. The application or growth takes place after removing the original n-type and / or p-type doped layer material, respectively, between the two pixels P and after passivating the exposed surface areas 11 of the pixels P, in particular the side surfaces, by application of a passivation layer 13.

[0153] Here, the index-raising material 19 is applied or grown on the cladding layer 7. There is no passivation layer 13 formed on the material transition 9. This represents the area below the material transition 9. For example, GaAs may be grown as the index-raising material 19 on the active zone 5 of the material transition 9 with AlGaAs. Alternatively, the index-raising material 19 is formed by diffusing or injecting the index-raising material 21 up to the cladding layer 7 or into the fill material 15 within the cladding layer 7. This is represented in FIG. 10A by the area above the material transition 9. The index-raising material 19 may be formed above the material transition 9 and / or below the material transition 9 in FIG. 10A. The area without the index-raising material 19 may be filled with the fill material 15.

[0154] Fig. 10B shows a simulation of the light propagation in the region of the material transition of the third example configuration of a pixel array according to the proposed principle. A cross-section of the material transition 9 is shown, etched only on the top side and filled with a material with increased index 19. The material with increased index 19 has a refractive index similar to that of the quantum well material 5. That is to say, the graph shows the active zone 5 and the material with increased index 19 in dark grey. The non-etched semiconductor material of the cladding layer 7 or the n-doped layer 1 and the filling material 15 are shown in white.

[0155] In this simulation the layer a few tenths of a micron thick is the active zone 5 or region of quantum well material. The 0.05 micron thick layer is still the "residual cladding" or "residual cladding layer 7". The 1 micron thick layer is the increased index material 19. Depending on the distance between the LED and the chosen material the individual sections can be made larger or smaller.

[0156] In the region of the material transition 9 between two pixels P, an active zone 5 with a refractive index of 3.5 and a layer thickness of 0.1 μm is arranged on the lower non-etched n-doped layer 1 with a refractive index of 3. On top of this first inner layer, a cladding layer 7 with a layer thickness of 0.05 μm and a refractive index of 3 is formed as the second inner layer of the material transition 9. On top of the cladding layer 7, a comparatively thick third inner layer of material 19 with a refractive index increased to 3.5 and a layer thickness of 1 μm is formed. The third inner layer is covered with a layer with a filling material 15 with a refractive index of, for example, about 3.

[0157] In the simulation of this layer structure, the wavelength of vacuum light was assumed to be 0.63 μm. The light generated here may be TM-polarized and / or TE-polarized. When the magnetic field direction is perpendicular to the plane formed by the incident vector and the surface normal (the "plane of incidence"), it is called TM-polarized (TM = orthogonal magnetic field), and when the electric field is perpendicular to the plane of incidence, it is called TE-polarized (TE = orthogonal electric field).

[0158] In this simulation, FIG. 10B shows along the x-axis the values ​​of the spatial extent x in μm. The y-axis shows the values ​​of the y-component of the electric field intensity E. FIG. 10B shows how the fundamental mode TE0 emerges from the active zone 5 and is stopped by a further optical barrier present between the two pixels P above and / or below the material transition 9 acting as a waveguide. The optical barrier is here an interface between layers with different refractive indices according to the layer structure of FIG. 10A described above. The fundamental mode TE0 enters the thicker third inner layer of the material with increased refractive index 19 and does not enter the neighbouring pixel P.

[0159] In practice, high refractive index materials are often also highly absorbing materials, especially since they have small bandgaps.

[0160] FIG. 11 shows a fourth example of the configuration of the pixel array A in a cross-sectional view. In FIG. 11, the same reference numbers as in the other figures denote the same features. In contrast to the structure according to FIG. 8, here an additional material 23, 24 is introduced into the active zone 5 of the material transition 9 between the two filling layers 15 and the two passivation layers 13, which effectively reduces the electrical and / or optical conductivity of the material transition 9 acting as a waveguide. The additional material is, on the one hand, a material 23 which increases the light absorption in the active zone 5 of the material transition 9. The increase in absorption in the active zone 5 between the pixels P is carried out by reducing the band gap of the material of the active zone 5. For this, elements which reduce the band gap are injected or diffused into the active zone 5 of the material transition 9. In particular, dopants are diffused or injected into the central region of the active zone 5 between the pixels P. The reduction in the band gap is carried out by so-called band gap normalization. The more material 23 is introduced along the material transition 9, the greater the absorption of light in the active zone 5.

[0161] Alternatively or additively, the additional material is, on the other hand, a material 24 which increases the electrical resistance in the active zone 5 of the material transition 9. For this purpose, an element which increases the electrical resistance is injected or diffused into the active zone 5 of the material transition 9. Such a further increase in the electrical resistance serves to further reduce the electrical crosstalk from one pixel P to the neighbouring pixel P. For example, Fe may be introduced into the active zone 5 of the material transition 9 which comprises InGaAsP in order to increase the electrical resistance. The more material 24 is introduced along the material transition 9, the greater the increase in the electrical resistance of the active zone 5 of the material transition 9 between two pixels P.

[0162] Both materials 23 , 24 are diffused or implanted into the active zone 5 of the respective material transition 9 prior to the application of the passivation layer 13 .

[0163] FIG. 12A shows a further configuration of the pixel array A in cross section, which, in contrast to the structure of FIG. 8, introduces an optical structure 25 in the region of the material transition. The structure 25 is introduced along the active zone 5 of the material transition 9 between the two filling layers 15 and the two passivation layers 13. This reduces the optical conductivity of the material transition 9, which acts as a waveguide between the two pixels P. The waveguide is reduced. The optical structure 25 may be a dielectric structure, such as a photonic crystal or a Bragg mirror. The structure 25 forms a periodic structure of refractive index along the material transition 9 above, below or on both sides of the active zone 5, which results in an optical band gap and prevents the propagation of photons along the material transition.

[0164] The periodicity of the optical structures depends on the wavelength of light, the size of the optical structures, the length of the patterned material transition 9 and the refractive index of the material used. In Fig. 12A only one optical structure 25 is shown below the material transition 9 acting as a waveguide. This optical structure 25 may also be formed above the material transition 9 acting as a waveguide. The optical structure 25 shown in Fig. 12A is a Bragg mirror. After forming the optical structure 25, the application of the passivation layer 13 is performed.

[0165] An extension of the example of FIG. 12A is shown in FIG. 12B. A conversion material 41 or 42 is applied onto the surface. Each of the conversion materials 41, 42 reaches approximately halfway between the two LEDs. The LED walls are themselves reflective, so that the light generated in the active layer of the LED is directed towards the conversion material by said walls. The light entering the conversion material from the LEDs is converted there. An optional reflective layer can be provided between the conversion materials to prevent crosstalk.

[0166] On top of the conversion material of each pixel there is deposited a photonic structure 34, 37 for directing the light, or alternatively a dielectric mirror may be provided as described above.

[0167] 13 shows a sixth example of the configuration of a pixel array A according to the present invention in a cross-sectional view. In contrast to the structure described in FIG. 13, here, two mutually opposing electrical contacts 27 are further introduced in the two filling layers 15 along the active zone 5 of the material transition 9 on both main surfaces of the material transition 9 acting as a waveguide, which effectively reduces the electrical and / or optical conductivity of the material transition 9 acting as a waveguide between the two pixels P. These mutually opposing electrical contacts 27 apply an electrical bias to both main surfaces of the respective material transition 9 between the two pixels P.

[0168] An applied electrical bias creates an electrostatic field which changes the optical properties of the material transition 9 , which initially acts as a waveguide, such that the waveguide along the material transition 9 is effectively reduced.

[0169] When an electrical bias is applied to the material transitions 9 between the pixels P, which initially function as waveguides, the light absorption in the waveguide is increased by the so-called "quantum confined Stark" effect (QCSE), which is used, for example, in electroabsorption modulators, where the fundamental absorption of the semiconductor is effectively increased by applying an electric field. The optical crosstalk between the pixels P is accordingly reduced. As electrical contacts 27, conventional Schottky or metal-insulator contacts are suitable. Furthermore, all conventionally used for bending strips without the passage of electric current are suitable.

[0170] After forming the two opposing electrical contacts 27, a passivation layer 13 is applied to the two opposing electrical contacts 27, in particular to the surface on which the filling material 15 has been formed and which is adjacent to the pixel P. The same reference numbers as in the other Figures 8 to 12A indicate the same features in Figure 13.

[0171] 14 shows a seventh exemplary configuration of a pixel array A according to the invention in a cross-sectional view. In contrast to the configuration of FIG. 13, here the electric field is generated intrinsically, i.e. by selecting a suitable material system. For this purpose, at least one layer of n-type doped material 29 and / or p-type doped material 31 is arranged on at least one of the two main surfaces of the material transition 9 in such a way that an electric field is generated by this, so that the electric field is introduced into the material transition 9 without further measures. If only a layer of doped material is formed on one of the two main surfaces of the material transition 9, and the layer on the other main surface of the material transition 9 is not doped, a so-called depletion field is provided, which is sufficient as an electric field for increasing the light absorption in the material transition 9. Alternatively, the electric field for increasing the light absorption in the material transition 9 is generated by forming a layer 29 of n-type doped material on one main surface of the material transition 9 and a layer 31 of p-type doped material on the opposite main surface of the material transition 9.

[0172] The materials used to provide the electric field, in particular the n-type doped material 29, the p-type doped material 31, and possibly undoped materials, are epitaxially grown by CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition) to provide a built-in bias between adjacent pixels P on the thin waveguide. For n-type and p-type doping, for example, InGaAlP can be doped with Si and Zn.

[0173] The doped materials 29 and / or 31 provide a bias with the same effect as in the configuration according to Fig. 13. Furthermore, the material providing the electric field is directly adjacent to the material transition 9, since no passivation layer 13 is required at the material transition 9. Only the exposed surface areas 11 of the pixels P are electrically insulated and passivated by the respective passivation layer 13. The material of this layer may for example comprise silicon dioxide. The pixels P are electrically connected by an electrical contact layer 33.

[0174] FIG. 15 shows an eighth configuration example of the pixel array A in a cross-sectional view. In this case, the active zone 5 has been etched in a controlled manner. In other words, damage to the active zone 5 or the formation of defects in the active zone 5 in the area of ​​the material transition is allowed here in a controlled manner. According to FIG. 15, the material transition 9 completely cuts into the two pixels P in which it is formed at its center. The transition to the two pixels P has a maximum thickness d c A material transition portion 9 is formed.

[0175] Figure 16 shows a ninth example of a configuration of a pixel array A. On the left side, two different examples of configurations for suppressing crosstalk between two adjacent pixels P are shown in cross-section. The upper variant V1 shows the first example of the configuration according to Figure 8, and the lower variant V2 shows the fourth example of the configuration according to Figure 12A. On the right side, a plan view of four adjacent pixels P is shown.

[0176] Each pixel P is assigned four neighboring pixels P, in which material transitions 9 are formed according to the second variant V2, here along the x direction. According to the first variant V1, material transitions 9 are formed along the y direction. In principle, each material transition 9 may be configured differently from the other material transitions 9, in particular according to the configuration examples described herein. In principle, the material transitions 9 may be configured the same along the respective spatial direction. The material transitions 9 may be formed according to any desired pattern. The configuration forms of the material transitions 9 along the respective spatial directions may alternate.

[0177] In this way, the array A described in this application includes all possible configurations or variants, as well as combinations of configurations of the material transitions 9. Based on the plan view in Fig. 16, it can be seen that all combinations of variants V are possible, for example depending on the orientation. This also applies to all possible shapes of the pixels P, which may be rounded or angular, but in this case are in particular rectangular.

[0178] 17 shows an example of a method according to the invention for manufacturing a pixel array A. The method for manufacturing an array A of optoelectronic pixels P comprises the following steps: In a first step S1, along the array A, a globally planar layer sequence of n-type doped layers 1 and p-type doped layers 3 is produced, between which an active zone 5 is formed. In the present application, various techniques are described and disclosed.

[0179] In a second step S2, material of the layer sequence is removed, in particular by etching, from the n-doped and p-doped sides between the pixels P to be formed. This is done in such a way that at least the active zone remains as a material transition. Likewise, a thin cladding layer 7 can also remain above, below or on both sides of the active zone 5 in the material transition 9. A layer of thickness d c is significantly reduced and optical modes cannot propagate laterally between pixels. Similarly, electrical crosstalk is reduced due to the higher resistivity. Overall, the electrical and / or optical conductivity of the material transition 9 is reduced.

[0180] Thickness d c is sufficiently thin as required depending on the specifications of Array A and the desired device specifications such as brightness or response sensitivity. The thickness of the region of material transition depends, among other things, on the material system and the wavelength of the emitted light.

[0181] In one embodiment, etching is performed up to or into the thin cladding layer 7 on each side of the active zone 5, or from both sides up to the active zone 5, to prevent all fundamental modes from propagating along the active zone 5 to the nearest pixel P. The maximum thickness d c depends on the refractive index difference between the active zone 5 and the cladding layer 7 of the material transition 9 which acts as a waveguide.

[0182] Maximum thickness d c By reducing the thickness d, more light can exit the waveguide, reducing the optical crosstalk. c Reducing the crosstalk means reducing the electrical crosstalk. The thin undoped cladding layer 7 of the active zone 5 that remains between the individual pixels P can hardly carry any current and therefore there is less electrical crosstalk.

[0183] In further steps S3-S5, after etching, the individual pixels P and the waveguides can be covered with other necessary materials in order to further suppress optical and / or electrical crosstalk outside the waveguide. In step S3, the exposed main surfaces of the material transitions 9 and the exposed surface areas 11 of the pixels P are electrically insulated and passivated by respective passivation layers 13, in particular comprising silicon dioxide. Depending on what measures are taken in the fourth step S4 to reduce crosstalk, electrical insulation and passivation of the exposed main surfaces of the material transitions 9 can be omitted.

[0184] In a fourth step S4, the removed material from the n-doped side and / or the p-doped side is at least partially replaced, for example by a filling material 15. In step S5, a contact layer 33 is deposited on the main surfaces of the pixels P to electrically contact the structure. According to one configuration, steps S1 to S5 are performed first for one main surface of the array and then, after a substrate exchange, for the other main surface of the array.

[0185] To further reduce optical and / or electrical crosstalk, the maximum thickness d c In addition to forming the material transition 9 having a passivation layer 13, further measures can be taken in a fourth step S4. Some examples are given here, others are described above for various configurations. Thus, the areas of removed material from the n-doped side and / or the p-doped side can be alternatively filled with a light absorbing material 17 and / or a material with an increased optical index 19 instead of the filling material 15. In this case, no passivation layer 13 is formed on the material transition 9.

[0186] Furthermore, in a fourth step S4, it is possible, alternatively or additively, to increase the optical absorption and / or the electrical resistance of the active zone 5. In this case, it may be advisable to also apply a passivation layer 13 to the material transition 9 in addition.

[0187] By applying these concepts, it is possible to manufacture an array A of optoelectronic pixels P, in particular the emitter array and the detector array, without etching through the active zone 5, without optical and electrical crosstalk and without performance and reliability issues compared to solutions in which the active zone is etched.

[0188] High resolution, especially monolithic display arrangement structures, are of interest for various applications. For displays with pixel-sized light sources, so-called matrix displays, especially based on GaN or InGaN, have been proposed.

[0189] 18 shows a cross-sectional view of a display arrangement with an IC substrate component and a monolithic pixelated optochip mounted thereon as a first configuration example. An IC substrate component 1 is shown with monolithic integrated circuits 2.1, 2.1, 2.3 and IC substrate contacts 3.1, 3.2, 3.3 which are driven and controlled by them. The IC substrate component 1 can have further components for control circuits, power supply circuits and signal exchange with peripheral devices, here an interface 23 is shown as an example.

[0190] The IC substrate contacts 3.1, 3.2, 3.3 are of metallic construction and are separated from each other by an insulating layer. A monolithic pixelated optochip 4 is placed on the IC substrate component 1 and is electrically and mechanically connected to the IC substrate contacts 3.1, 3.2, 3.3. More precisely, the contacts 22.1, 22.2 and 22.3 are introduced on the surface of the pixelated optochip 4 such that when correctly placed on the IC, they face the IC substrate contacts 3.1, 3.2, 3.3. As shown, the contacts are of equal size, so that a small offset as shown does not have any adverse effect and short circuits are avoided. Various techniques for such connections are disclosed in the present application.

[0191] The monolithic pixelated optochip 4 comprises a semiconductor layer sequence 5 with a first semiconductor layer 6 doped with p-type and a second semiconductor layer 7 doped with n-type, where the first semiconductor layer 6 and the second semiconductor layer 7 are applied over a large area and extend substantially over the entire monolithic pixelated optochip 4 in a lateral direction running perpendicular to the stacking direction 8. There are configuration variants of the semiconductor layers 6, 7, not shown in detail, with different doping thicknesses or with several individual layers of different semiconductor materials. Between the first semiconductor layer 6 and the second semiconductor layer 7 there is an active layer with quantum wells, not shown in detail, in the region of which an active zone 24 is formed, which emits electromagnetic radiation when a current flows through the semiconductor layer sequence 5 in the stacking direction 8.

[0192] A transparent contact layer 16, for example made of ITO (indium tin oxide), is applied two-dimensionally flat to the front surface 17 above the semiconductor layer sequence 5. In order to obtain a small pixel size P of LEDs 9 with a diagonal size of 200 μm to 1200 μm in this configuration example, the first light source contacts 10.1, 10.2, 10.3 on the lower side of the first semiconductor layer 6 facing the IC substrate part 1 are significantly smaller than the pixel size P. In this configuration example, a maximum diagonal MD of the first light source contacts 10.1, 10.2, 10.3 of 20 μm is selected so that the feature that the projected area 13 of the first light source contacts 10.1, 10.2, 10.3 on the LED back surface 12 is at most half the area of ​​the LED back surface 12 is fulfilled. In this configuration example, the projected area 13 is about 5% of the area of ​​the LED back surface 12 when the diagonal is 20 μm. This results in a laterally confined current path 25 in the LED 9 between the first light source contact 10.2 and the second light source contact 11 formed by a portion of the transparent contact layer 16, resulting in a laterally confined active zone 24. Furthermore, non-radiative recombination is suppressed at the edges of the active zone 24. In order to improve the lateral confinement of the current path 25, the dopants of the first semiconductor layer 6 and the second semiconductor layer 7 are preferably doped with 10 4 Sm -1 Smaller than 3·10 3 Sm -1 less than 10, more preferably 3 Sm -1 10.3, 10.4, 10.5, 10.6, 10.7, 10.8, 10.9, 11.10, 11.10, 11.2, 11.3, respectively. In addition, it is advantageous to select a small layer thickness SD of the first semiconductor layer 6. In this case, the layer thickness SD of the first semiconductor layer 6 in the stacking direction 8 is preferably at most 10 times, preferably at most 5 times, the maximum diagonal MD of the first light source contacts 10.1, 10.2, 10.3 in the lateral direction.

[0193] According to the invention, the first light source contact 10.2 is surrounded in opposite lateral directions perpendicular to the stacking direction 8 by rear absorbers 15.1, 15.2 with an optical blocking effect, which preferably consist of silicon, germanium or gallium arsenide and / or have intercalations of graphene or carbon black particles. From the light path 26 shown in Fig. 19 of the first configuration example, it can be seen that this measure reduces the crosstalk from the driven LED 9 to the neighboring pixels.

[0194] In the second configuration shown in Fig. 20, the same reference numbers are used for components that correspond to the first configuration. Shown is a three-dimensional structure on top of the second semiconductor layer 7, which improves the extraction of light to the front surface 17. It can be seen that the degree of total internal reflection is reduced and the extraction cone is enlarged. In an alternative configuration, not shown in detail, a Fresnel lens structure is provided on the front surface 17. Another option is to have a photonic crystal structure disposed on the surface.

[0195] 21, the optical crosstalk between adjacent LEDs 9 is further reduced by front absorbers 21.1, 21.2, 21.3, 21.4 laterally surrounding the second light source contacts 11.1, 11.2, 11.3. If the front absorbers 21.1, 21.2, 21.3, 21.4 are made electrically insulating, the lateral confinement of the current paths for localizing the active zone 24 can be further improved.

[0196] In the illustrated configuration, the optochip contact elements 22.1, 22.2, 22.3 are arranged between the first light source contacts 10.1, 10.2, 10.3 and the respective associated IC substrate contacts 3.1, 3.2, 3.3. The cross-sectional area of ​​the optochip contact elements 22.1, 22.2, 22.3 is larger than the cross-sectional area of ​​the first light source contacts 10.1, 10.2, 10.3, allowing a simplified contact-connection of the monolithic pixelated optochip 4 onto the IC substrate component 1. Further optoelectronic structural elements, display arrangement structures, optoelectronic devices, pixels, arrays, and various methods are of interest below. [Target 1] An optoelectronic component, comprising: at least one semiconductor element having an active zone configured to generate light; a dielectric filter disposed on a first main surface of the at least one semiconductor element and configured to transmit light only in a predetermined direction; a reflective material disposed on at least one side of the at least one semiconductor element and at least one side of the dielectric filter; An optoelectronic structural element comprising: [Target 2] The optoelectronic element according to object 1, wherein at least one side surface of the at least one semiconductor element extends at an angle with respect to the height of the active zone. [Target 3] the at least one semiconductor element having a first terminal and a second terminal; The optoelectronic structure according to object 1 or 2, wherein the reflective material is electrically conductive and is coupled to a first terminal of the at least one semiconductor element. [Subject 4] The optoelectronic structural element according to object 3, wherein the reflective material is formed conductively only on two opposing sides of the light source so as to contact the first terminal for current supply. [Target 5] The optoelectronic component according to claim 4, wherein the reflective material is made non-conductive on the other two sides so as to be insulated from the terminals for supplying electric current. [Target 6] The optoelectronic component according to any one of objects 1 to 5, wherein the dielectric filter is at least partially formed in layers of the semiconductor components adjacent in the radial direction. [Target 7] The optoelectronic structure of any one of objects 1 to 6, wherein the dielectric filter has a first region and a second region having different refractive indices, and a conversion material forms the first region. [Target 8] the at least one semiconductor element has a second main surface opposite the first main surface; The optoelectronic component according to any one of objects 1 to 7, wherein a reflective layer is disposed below the second main surface of the at least one semiconductor element. [Target 9] The optoelectronic component according to any one of objects 1 to 8, wherein the reflective layer is at least partially conductive and is coupled to a second terminal of the at least one semiconductor element. [Target 10] The optoelectronic structural element according to object 8, wherein the reflective layer is electrically insulating and one or more conductive layers are disposed above and / or below the reflective layer. [Subject 11] The optoelectronic component of any one of claims 1 to 10, wherein an electrically insulating first material is arranged between the reflective material and the reflective layer, in particular the electrically insulating first material having a lower refractive index than the at least one semiconductor element. [Target 12] The optoelectronic component according to any one of objects 1 to 11, wherein a layer having a roughened surface is disposed between the at least one semiconductor element and the dielectric filter. [Subject 13] The optoelectronic component is a conversion material at the light output surface, the conversion material comprising an inorganic pigment or quantum dots; or a conversion material between the dielectric filter and the semiconductor material, the conversion material comprising an inorganic dye or a quantum dot; 13. The optoelectronic device according to any one of claims 1 to 12, further comprising: [Subject 14] 14. The optoelectronic device according to any one of objects 1 to 13, wherein a first main surface of the at least one semiconductor element has a roughened surface. [Target 15] 15. The optoelectronic component according to any one of claims 1 to 14, wherein the at least one semiconductor element has a lateral extent of at least 140 μm and / or a height of at least 5 μm. [Target 16] The optoelectronic structure of any one of objects 1 to 15, wherein the at least one semiconductor element includes a plurality of semiconductor elements arranged in an array, and adjacent semiconductor elements are separated from each other by a reflective material. [Subject 17] The optoelectronic structural element of object 11, wherein the reflective material is conductive and the first terminals of the semiconductor elements are connected to a common external terminal via the reflective material. [Subject 18] The optoelectronic structural element according to any one of objects 1 to 17, wherein the at least one semiconductor element includes a plurality of semiconductor elements arranged side by side, and an electrically insulating second material is disposed between adjacent semiconductor elements. [Subject 19] An optoelectronic structural element according to any one of objects 1 to 18, wherein the reflective material is electrically conductive and above and / or below and / or within the electrically insulating second material extend conductor tracks connecting the first terminal of the semiconductor element to a common external terminal. [Target 20] 20. The optoelectronic device according to any one of claims 1 to 19, wherein the second terminals of the semiconductor elements are individually controllable. [Subject 21] 21. The optoelectronic component according to any one of claims 1 to 20, wherein the optoelectronic component further comprises a lens disposed above the dielectric filter. [Subject 22] A method for manufacturing an optoelectronic component, comprising the steps of: Providing at least one semiconductor device according to any one of the preceding or following subjects having an active zone configured to generate light; disposing a dielectric filter over a first major surface of the at least one semiconductor device, the dielectric filter being configured to transmit light only in a predetermined direction; disposing a reflective material on at least one side of the at least one semiconductor element and on at least one side of the dielectric filter; A method comprising: [Subject 23] A pixel element comprising an optoelectronic component for generating a pixel of a display, the pixel comprising: said pixel being formed from at least two sub-pixels, in particular two sub-pixels emitting the same colour, in particular each sub-pixel being formed by an optoelectronic component, A subpixel separation element is provided between two adjacent subpixels of the same pixel element; The subpixel separation elements are configured to provide isolation with respect to electrical drive control of respective subpixels and to provide optical coupling with respect to light emitted by each of the subpixels. [Target 24] The pixel of object 23, wherein the subpixels have a common epitaxial layer, and the subpixel separation elements extend trench-like within the epitaxial layer laterally to a plane of the epitaxial layer in a primary emission direction. [Target 25] The pixel according to object 23 or 24, wherein the sub-pixels of the pixel can be electrically contacted and / or driven and controlled independently of one another. [Target 26] 26. The pixel of any one of targets 23 to 25, wherein at least two of the subpixels have a common active layer separated by the subpixel separation element. [Subject 27] The pixel of any one of targets 23 to 26, wherein the subpixel separation element extends into an active layer of the pixel or extends at least partially through the pixel. [Subject 28] 28. The pixel of any one of objects 23 to 27, wherein the subpixel separation element is formed by quantum well intermixing caused by diffused dopants, particularly in the region of the active layer. [Subject 29] The pixel of any one of objects 23 to 28, wherein the pixel further comprises a lens extending across a surface of the pixel. [Target 30] 30. The pixel of any one of objects 23 to 29, wherein a transparent conductive layer is formed on the surface. [Target 31] The pixel of any one of targets 23 to 30, wherein at least one contact surface for contacting at least one subpixel is provided on a surface opposite the light output surface. [Target 32] A display arrangement structure having a plurality of pixels according to any one of objects 23 to 31, A display arrangement structure, comprising: a pixel element isolation layer provided between two adjacent pixels; the pixel element isolation layer configured to electrically isolate the adjacent pixels with respect to drive control of each pixel, and to optically isolate the adjacent pixels with respect to light emitted by the pixels. [Target 33] The display arrangement structure of target 32, wherein the pixel and the associated subpixel have a common epitaxial layer, and the pixel element isolation layer extends in a trench shape within the epitaxial layer laterally to the epitaxial layer plane in the main emission direction. [Target 34] The display arrangement structure according to target 32 ​​or 33, wherein a trench depth d1 of the pixel element isolation layer is greater than a trench depth of the subpixel isolation element. [Target 35] The display arrangement structure of any one of targets 32 to 34, wherein the adjacent pixels or subpixels include active layers separated by a pixel element isolation layer and / or a subpixel isolation element. [Target 36] The display arrangement structure further comprises a carrier layer having contact areas corresponding to the contact areas of the pixels, the carrier layer comprising the following elements: A conductive line for supplying a current to the pixel; a current driver or supply circuit; and A control circuit for adjusting the brightness The display arrangement structure of any one of objects 32 to 35, wherein at least one of the following is provided. [Subject 37] A method for calibrating a pixel, comprising the steps of: Driving and controlling a sub-pixel of a pixel according to any one of targets 23 to 31; Detecting sub-pixel defect information; storing said defect information in a storage unit of said control unit; A method comprising: [Target 38] The method of object 37, wherein drive control, sensing and storage are performed sequentially for all individual subpixels of a pixel. [Subject 39] An array having at least two optoelectronic structural elements, each structural element between an n-doped layer and a p-doped layer forming an active zone suitable for emitting light, Between two adjacently formed optoelectronic components, from the n-doped side and the p-doped side to or within the cladding layer or to or at least partially within the active zone, a maximum thickness d c material of the layer sequence is interrupted or removed so as to form a material transition of the layer sequence, which reduces electrical and / or optical conductivity at the material transition. An array comprising: [Subject 40] The array of object 39, wherein the material transition portion has the active zone and a residual layer of small thickness on at least one side of the active zone. [Subject 41] 41. The array of object 39 or 40, wherein the removed material is at least partially replaced with a filler material. [Subject 42] 42. The array of any one of objects 39 to 41, wherein the removed material is at least partially replaced with a material that has a relatively small band gap and thus absorbs light in the active zone. [Subject 43] The array of any one of objects 39 to 42, wherein the removed material is at least partially replaced with a material having a high refractive index, particularly a refractive index higher than the refractive index of the doped or filled material. [Subject 44] The array of any one of objects 39 to 43, wherein the light absorbing material and / or the material having a high refractive index is applied to each material transition portion. [Subject 45] The array of any one of objects 39 to 44, wherein the material having a high refractive index is formed by diffusing or injecting a material that increases the refractive index into the filling material, particularly up to each cladding layer. [Subject 46] The array of any one of objects 39 to 45, wherein a material that enhances optical absorption and / or a material that enhances electrical resistance is diffused or injected into the active zone of each material transition portion. [Subject 47] The array of any one of objects 39 to 46, wherein at least one optical structure, in particular a photonic crystal and / or a Bragg mirror, is fabricated along, on, or within the material transition. [Subject 48] The array of any one of objects 39 to 47, wherein an electrical bias is applied to the two main surfaces of the material transition portion by two opposing electrical contacts, generating an electric field through each material transition portion. [Subject 49] The array of any one of objects 39 to 48, wherein an electric field is generated through each material transition by n-type doped material and / or p-type doped material applied or grown on at least one of the two main surfaces of the material transition. [Target 50] The array of any one of objects 39 to 49, wherein the exposed main surface of the material transition portion and / or the exposed surface area of ​​the optoelectronic structural element are electrically insulated and passivated by respective passivation layers, in particular having silicon dioxide. [Subject 51] The array of any one of objects 39 to 50, wherein the main surfaces of the optoelectronic structural elements are electrically contacted by a contact layer. [Subject 52] The array of any one of objects 39 to 51, wherein the materials and / or the material transitions between optoelectronic structural elements and adjacent optoelectronic structural elements are formed differently from each other, particularly depending on the direction. [Subject 53] The array of any one of objects 39 to 52, wherein the array further comprises a conversion material applied to a surface facing the primary radiation direction. [Subject 54] A method for manufacturing an array of optoelectronic pixels, comprising the steps of: providing a generally planar layer sequence of n-type doped layers and p-type doped layers along the array, forming an active zone therebetween suitable for emitting light; - removing at least partially the material between adjacent pixels to be formed from the n-type doped side and from the p-type doped side, thereby forming a region of maximum thickness d c leaving a material transition of said pixel area to reduce electrical and / or optical conductivity between adjacent pixels; A method comprising: [Target 55] The method of object 54, wherein the step of removing the material includes removing a layer sequence from the n-type doped side and the p-type doped side to or within an undoped cladding layer, or to or at least partially within the active zone. [Target 56] The method of object 54, wherein the material removed from the n-type doped side and / or the p-type doped side is at least partially replaced with a fill material. [Subject 57] The method of any one of targets 54 to 56, wherein the material removed from the n-doped side and / or the p-doped side is at least partially replaced with a material that has a relatively small band gap and thus absorbs light of the active zone. [Target 58] The method of any one of objects 54 to 57, wherein the material removed from the n-type doped side and / or the p-type doped side is replaced with a material having a high refractive index, in particular a refractive index higher than the refractive index of the doped material or the filling material. [Subject 59] The method of any one of objects 54 to 58, wherein the light absorbing material and / or the material having a high refractive index are applied to each material transition portion. [60 targets] The method of any one of objects 54 to 59, wherein the material having a high refractive index is formed by diffusion or injection into the fill material, particularly into the respective cladding layer. [Subject 61] The method of any one of targets 54 to 60, wherein a material that enhances optical absorption and / or a material that enhances electrical resistance from the n-type doped side and / or the p-type doped side is diffused or implanted into the active zone. [Subject 62] The method of any one of objects 54 to 61, wherein at least one optical structure, in particular a photonic crystal and / or a Bragg mirror, is fabricated along the material transition from the n-type doped side and / or the p-type doped side, on or within the material transition. [Subject 63] The method of any one of targets 54 to 62, wherein two opposing electrical contacts are formed from the n-type doped side and the p-type doped side, and an electrical bias is applied to the two main surfaces of the material transition portion, generating an electric field through each material transition portion. [Subject 64] The method of any one of targets 54 to 63, wherein an electric field is introduced through each material transition by n-type doped material and / or p-type doped material applied or grown on at least one of the two major surfaces of the material transition. [Subject 65] The method of any one of targets 54 to 64, wherein the method includes electrically insulating and passivating the exposed major surface of the material transition and / or the exposed surface area of ​​the pixel with a respective passivation layer, particularly having silicon dioxide. [Subject 66] The method of any one of targets 54 to 65, wherein the method includes electrically contacting a major surface of the pixel with a contact layer. [Subject 67] The method of any one of objects 54 to 66, wherein the materials and / or material transitions between the pixel and its neighboring pixels are formed to be different from each other, particularly depending on the direction. [Subject 68] The method of any one of objects 54 to 67, wherein the steps are first performed on one major surface of the array and then performed on the other major surface of the array after substrate exchange. [Subject 69] A display arrangement structure, comprising: an IC substrate component having a monolithic integrated circuit and IC substrate contacts arranged in a matrix; A monolithic pixelated optochip comprising a semiconductor layer sequence with a first semiconductor layer having a first doping and a second semiconductor layer having a second doping, the polarity of the charge carriers of the first semiconductor layer being different from the polarity of the charge carriers of the second semiconductor layer, the semiconductor layer sequence defining a stacking direction; Including, In the monolithic pixelated optochip, optoelectronic components are arranged in a matrix, A display arrangement structure, in which each optoelectronic component has a back surface facing the IC substrate part and a first light source contact, the first light source contact being adjacent in contact with the first semiconductor layer and electrically connected to a respective one of the IC substrate contacts, The projected area of ​​the first light source contact on the rear surface corresponds to at most half the area of ​​the rear surface; The first light source contact is surrounded by a rear absorber in a lateral direction perpendicular to the stacking direction. A display arrangement structure comprising: [Target 70] The first semiconductor layer and the second semiconductor layer are 4 Sm -1 Less than 3·10 3 Sm -1 less than 10 3 Sm -1 The display arrangement structure of subject 69, having a p-type or n-type conductivity of less than 100 nm. [Subject 71] The display arrangement structure of object 69 or 70, wherein the layer thickness of the first semiconductor layer in the stacking direction is up to 10 times, preferably up to 5 times, the maximum diagonal of the first light source contact in the lateral direction. [Subject 72] The display arrangement structure according to any one of items 69 to 71, wherein the pixel size of the optoelectronic structural element is greater than 100 μm, particularly greater than 120 μm, particularly in the range of 200 μm to 1000 μm. [Subject 73] The display arrangement structure of any one of objects 69 to 72, wherein the projected area of ​​the first light source contact onto the rear surface corresponds to a maximum of 25%, preferably a maximum of 10%, of the area of ​​the rear surface. [Subject 74] The display arrangement structure of any one of objects 69 to 73, wherein the rear absorber extends into the semiconductor sequence in a stacking direction. [Target 75] A display arrangement structure described in any one of targets 69 to 74, wherein a second light source contact made of a transparent material is arranged in the stacking direction on the second semiconductor layer of each optoelectronic component, and the light source contact is electrically connected to a transparent contact layer on the front side of the monolithic pixelated optochip. [Subject 76] The display arrangement structure of object 75, wherein the second light source contact is formed by the transparent contact layer itself. [Subject 77] A display arrangement structure according to any one of objects 69 to 76, wherein the second light source contact is adjacent to a transparent contact layer, and the second light source contacts of adjacently arranged optoelectronic structural elements are separated from each other by a front absorber in a lateral direction pointing perpendicular to the stacking direction. [Subject 78] The display arrangement structure of any one of objects 69 to 77, wherein the front absorber extends in a direction opposite to the stacking direction up to the second semiconductor layer, preferably into the second semiconductor layer. [Subject 79] A display arrangement structure described in any one of targets 69 to 78, wherein, in the stacking direction, an optochip contact element having a larger cross-sectional area than the first light source contact is adjacent to the first light source contact. [Target 80] The display arrangement structure of any one of objects 69 to 79, wherein the display arrangement structure further includes a light conversion element on a surface of the monolithic pixelated optochip. [Subject 81] A method of manufacturing a display arrangement structure, comprising the steps of: an IC substrate component having a monolithic integrated circuit and IC substrate contacts arranged in a matrix is ​​electrically connected to the monolithic pixelated optochip; In said monolithic pixelated optochip a semiconductor layer sequence is grown comprising a first semiconductor layer having a first doping and a second semiconductor layer having a second doping, the polarity of charge carriers of said first semiconductor layer being different from the polarity of charge carriers of said second semiconductor layer, said semiconductor layer sequence defining a stacking direction, a matrix of optoelectronic components arranged in the monolithic pixelated optochip, each optoelectronic component having a back surface facing the IC substrate part and a first light source contact, the first light source contact being adjacent and in contact with the first semiconductor layer and electrically connected to a respective one of the IC substrate contacts, The first light source contact is disposed so that its projected area perpendicular to the stacking direction occupies at most half of the area of ​​the back surface; The first light source contact is surrounded by a rear absorber in a lateral direction perpendicular to the stacking direction. A method comprising the steps of: 。

Claims

1. An optoelectronic component, comprising: at least one semiconductor device having an active zone configured to generate light from a first major surface; a dielectric filter disposed on the first main surface of the at least one semiconductor element and configured to transmit light only in a predetermined direction; a reflective material disposed on at least one side of the at least one semiconductor element and at least one side of the dielectric filter; An optoelectronic structural element comprising:

2. 2. An optoelectronic component according to claim 1, wherein at least one side surface of said at least one semiconductor element extends obliquely at the height of said active zone.

3. the at least one semiconductor element having a first terminal and a second terminal; 3. An optoelectronic component according to claim 1, wherein the reflective material is electrically conductive and is coupled to a first terminal of the at least one semiconductor element.

4. 4. An optoelectronic component as claimed in claim 3, wherein the reflective material is made electrically conductive only on two opposite sides of the light source so as to contact the first terminal for supplying electrical current.

5. 5. An optoelectronic component as claimed in claim 4, characterized in that the reflective material is made non-conductive on the other two sides so that it is insulated from the terminals for the current supply.

6. 6. An optoelectronic component as claimed in claim 1, wherein the dielectric filter is at least partially formed in a layer of the semiconductor component adjacent in the radial direction.

7. 7. An optoelectronic component as claimed in claim 1, wherein the dielectric filter comprises first and second regions with different refractive indices, the conversion material forming the first regions.

8. the at least one semiconductor element has a second main surface opposite the first main surface; 4. An optoelectronic component according to claim 3, further comprising a reflective layer disposed beneath the second main surface of the at least one semiconductor element.

9. 9. An optoelectronic component according to claim 8, wherein the reflective layer is at least partially electrically conductive and is coupled to a second terminal of the at least one semiconductor element.

10. 9. An optoelectronic component according to claim 8, wherein the reflective layer is electrically insulating and one or more conductive layers are arranged above and / or below the reflective layer.

11. 11. The optoelectronic component according to claim 8, wherein an electrically insulating first material is arranged between the reflective material and the reflective layer, in particular the electrically insulating first material having a lower refractive index than the at least one semiconductor element.

12. 12. An optoelectronic component as claimed in claim 1, further comprising a surface-roughened layer disposed between the at least one semiconductor component and the dielectric filter.

13. The optoelectronic component is a conversion material at the light output surface, the conversion material comprising an inorganic dye or quantum dots; or a conversion material between the dielectric filter and the semiconductor element, the conversion material including an inorganic dye or a quantum dot; 13. An optoelectronic component according to claim 1, further comprising:

14. 14. An optoelectronic component as claimed in claim 1, wherein the first main surface of the at least one semiconductor element has a roughened surface.

15. 15. An optoelectronic component as claimed in claim 1, wherein the at least one semiconductor element has a lateral extent of at least 140 μm and / or a height of at least 5 μm.

16. 16. An optoelectronic component according to claim 1, wherein the at least one semiconductor element comprises a plurality of semiconductor elements arranged in an array, adjacent semiconductor elements being separated from each other by the reflective material.

17. 4. An optoelectronic component according to claim 3, wherein the reflective material is electrically conductive, and the first terminals of the semiconductor elements are connected to a common external terminal through the reflective material.

18. 4. An optoelectronic component according to claim 3, wherein the at least one semiconductor element comprises a plurality of juxtaposed semiconductor elements, with an electrically insulating second material disposed between adjacent semiconductor elements.

19. 19. An optoelectronic component as claimed in claim 18, wherein the reflective material is electrically conductive and above and / or below and / or within the electrically insulating second material extend conductor tracks which connect the first terminals of the semiconductor elements to a common external terminal.

20. 10. The optoelectronic component of claim 9, wherein the second terminals of the semiconductor components are individually controllable.

21. 21. The optoelectronic component according to claim 1, further comprising a lens arranged above the dielectric filter.

22. A method for manufacturing an optoelectronic component, comprising the steps of: Providing at least one semiconductor component according to any one of claims 1 to 21 having an active zone configured to generate light; disposing a dielectric filter over a first major surface of the at least one semiconductor device, the dielectric filter being configured to transmit light only in a predetermined direction; disposing a reflective material on at least one side of the at least one semiconductor element and on at least one side of the dielectric filter; A method comprising:

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