Display device

Abstract

To provide a display device which maintains rigidity while a glass substrate is treated and holes of various shapes are formed.SOLUTION: A display panel according to an embodiment comprises a glass substrate having a display area, a light-transmission area, and a non-display area surrounding the light-transmission area; a circuit unit and light-emitting unit disposed in the display area; an etch stop layer disposed in the non-display area; and a plurality of protruding patterns disposed in the non-display area, where the glass substrate includes a first opening located at a position corresponding to the light-transmission area, and the plurality of protruding patterns are located on the etch stop layer.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The embodiment relates to a display device. [Background technology]

[0002] Electroluminescence displays are broadly divided into inorganic light-emitting displays and organic light-emitting displays depending on the material of the light-emitting layer. Active matrix type organic light-emitting displays include organic light-emitting diodes (hereinafter referred to as OLEDs) that emit light themselves, and have the advantages of a fast response speed, luminous efficiency, brightness, and wide viewing angle. In an organic light-emitting display, an OLED is formed for each pixel. An organic light-emitting display not only has a fast response speed and excellent luminous efficiency, brightness, and viewing angle, but also has excellent contrast ratio and color reproduction rate as it can display black gradations as perfect black.

[0003] Recently, organic light emitting display devices are constructed on a plastic substrate, which is a flexible material, but may also be constructed on a glass substrate for various reasons.

[0004] However, when the panel is constructed on a glass substrate, the rigidity is reduced when a notch or round is processed or a hole is formed inside the panel, and it is difficult to process various shapes. Summary of the Invention [Problem to be solved by the invention]

[0005] The embodiment provides a display device that maintains rigidity even when a glass substrate is processed and holes of various shapes are formed.

[0006] The embodiment provides a display device in which the occurrence of peeling around holes is improved.

[0007] The objects of the present invention are not limited to the objects mentioned above, and other objects not mentioned will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0008] A display device according to one feature of the present invention includes a glass substrate including a display region, a light-transmitting region, and a non-display region surrounding the light-transmitting region, a circuit section and a light-emitting element section arranged on the display region, an etch-stop layer arranged on the non-display region, and a plurality of protruding patterns arranged on the non-display region, wherein the glass substrate includes a first opening arranged at a position corresponding to the light-transmitting region, and the plurality of protruding patterns are arranged on the etch-stop layer.

[0009] The plurality of protruding patterns may have an undercut shape.

[0010] The plurality of protruding patterns may have the same layer structure as the source electrode of the circuit unit.

[0011] The etch stop layer may include a protrusion that protrudes inwardly into the first opening.

[0012] The etch stop layer may include an organic insulating layer or a metal layer.

[0013] The display device may include a dam disposed in the non-display area, and the multiple protruding patterns may include a multiple first protruding patterns disposed between the display area and the dam, a multiple second protruding patterns disposed between the dam and the etch stop layer, and a multiple third protruding patterns disposed on the etch stop layer.

[0014] The first protruding patterns, the second protruding patterns, and the third protruding patterns may have the same shape.

[0015] At least one of the plurality of first protruding patterns, the plurality of second protruding patterns, and the plurality of third protruding patterns may be different in shape or material.

[0016] The plurality of first protruding patterns may include a metal layer, and the plurality of third protruding patterns may include an organic insulating layer.

[0017] The organic insulating layer of the plurality of third protruding patterns may be a dummy layer of a bank layer in the display area.

[0018] The plurality of first protruding patterns may include an inorganic insulating layer, and the plurality of third protruding patterns may include a metal layer.

[0019] The plurality of first protruding patterns may include a first pattern layer and a second pattern layer disposed on the first pattern layer, the first pattern layer being an inorganic insulating layer, and the second pattern layer being an organic insulating layer.

[0020] The glass substrate may include a side coating layer disposed in the first opening, and a rear coating layer disposed on a lower surface of the glass substrate and a lower surface of the side coating layer.

[0021] The lower surface of the side coating layer may have a curvature.

[0022] A display device according to another feature of the present invention includes a glass substrate including a display region, a light-transmitting region, and a non-display region surrounding the light-transmitting region, a circuit section and a light-emitting element section arranged on the display region, an etch stop layer arranged on the non-display region, and a plurality of protruding patterns arranged on the non-display region, the glass substrate including a first opening arranged at a position corresponding to the light-transmitting region, the plurality of protruding patterns including a first pattern layer, a third pattern layer, and a second pattern layer arranged between the first pattern layer and the third pattern layer, and the width of the second pattern layer is smaller than the widths of the first pattern layer and the third pattern layer. Effect of the Invention

[0023] According to this embodiment, there is an advantage in that process optimization allows holes of various shapes to be simultaneously formed in the panel when the mother glass substrate is cut.

[0024] Furthermore, it is possible to prevent the etching solution from penetrating into the inside of the panel when etching the glass substrate.

[0025] In addition, it is possible to prevent moisture from penetrating through the light-transmitting region.

[0026] Moreover, peeling of the layer around the light transmitting region can be prevented.

[0027] The effects of the present invention are not limited to those mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims. [Brief description of the drawings]

[0028] [Figure 1] 1 is a conceptual diagram of a display device according to an embodiment of the present invention; [Diagram 2] 2 is a cross-sectional view taken along the line II' of FIG. 1. [Diagram 3] FIG. 3 is an enlarged view of part A in FIG. 2. [Figure 4] FIG. 3 is an enlarged view of part B in FIG. 2. [Figure 5a] This is a modified example of FIG. [Figure 5b] This is a modified example of FIG. [Figure 6] 1 is a diagram showing an etch stop layer surrounding a light-transmitting region and an edge region of a substrate. [Figure 7] 2 is a cross-sectional view taken along the line II-II' of FIG. 1. [Figure 8] FIG. 7 is an enlarged view of part C in FIG. 6. [Figure 9] FIG. 9 is an enlarged view of part D in FIG. 8. [Figure 10] 1 is a diagram showing a display device according to a first embodiment of the present invention. [Figure 11]FIG. 11 is an enlarged view of part E in FIG. [Figure 12] FIG. 11 is an enlarged view of part F in FIG. [Figure 13] 1 is a diagram showing a front display panel in which a light-transmitting region is formed; [Figure 14a] 4 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 14b] 4 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 14c] 4 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 14d] 4 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 14e] 4 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 15] 13 is a diagram showing a display device according to a second embodiment of the present invention. [Figure 16] FIG. 16 is an enlarged view of part H in FIG. [Figure 17] 13 is a diagram showing a display device according to a third embodiment of the present invention. [Figure 18] FIG. 16 is an enlarged view of part I in FIG. [Figure 19] 13 is a diagram showing a display device according to a fourth embodiment of the present invention. [Figure 20] 13 is a diagram showing a display device according to a fifth embodiment of the present invention. [Figure 21] 13 is a diagram showing a display device according to a sixth embodiment of the present invention. [Figure 22] 13 is a diagram showing a display device according to a seventh embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] The advantages and features of the present invention, and the methods for achieving them, will become apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. The present invention is not limited to the embodiments disclosed below, and may be embodied in various different forms, but the embodiments are provided to complete the disclosure of the present invention and to fully inform those skilled in the art of the invention of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0030] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are merely examples, and the present invention is not limited to the matters shown in the drawings. The same reference numerals refer to substantially the same components throughout the specification. In addition, in explaining the present invention, if it is determined that a detailed description of related known technology may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

[0031] When the terms "comprise," "include," "have," "be," etc. are used in the present specification, other parts may be added unless "only" is used. When an element is expressed in the singular, it may be interpreted as being plural unless otherwise expressly stated.

[0032] In interpreting elements, the error range is to be interpreted as being included even if there is no explicit description to the contrary.

[0033] When describing a positional relationship or interconnection between two elements, such as "on," "upper," "lower," "beside," "connect, couple," crossing, intersecting, etc., one or more other elements may be interposed between the elements, unless there is a reference such as "immediately" or "directly."

[0034] When a temporal relationship is explained using "after," "following," "next to," "before," etc., it does not have to be consecutive on the timeline, as long as words such as "immediately" or "directly" are not used.

[0035] In order to distinguish components, ordinal numbers such as 1, 2, etc. may be used before the names of the components, but the functions or structures of the components are not limited by these ordinal numbers or the names of the components. For convenience of explanation, the ordinal numbers before the names of the same components may be different between embodiments.

[0036] The following embodiments may be combined or combined with each other in part or in whole, and may be technically linked and driven in various ways. Each embodiment may be implemented independently of each other, or may be implemented together in a related relationship.

[0037] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0038] Fig. 1 is a conceptual diagram of a display device according to an embodiment of the present invention. Fig. 2 is a cross-sectional view taken along the line II' in Fig. 1. Fig. 3 is an enlarged view of a portion A in Fig. 2. Fig. 4 is an enlarged view of a portion B in Fig. 2. Fig. 5a is a modified example of Fig. 3. Fig. 5b is a modified example of Fig. 4.

[0039] 1 and 2, the display device 1 may include a display area DA for outputting an image and a light-transmitting area TA for receiving light. The light-transmitting area TA may be a hole structure for transmitting light to a sensor 40 disposed under the display panel, but is not limited thereto.

[0040] The display panel may include a circuit unit 13 disposed on a substrate 10, and a light emitting element unit 15 disposed on the circuit unit 13. A polarizing plate 19 may be disposed on the light emitting element unit 15, and a cover glass 20 may be disposed on the polarizing plate 19. In addition, a touch unit 18 may be disposed between the light emitting element unit 15 and the polarizing plate 19.

[0041] According to an embodiment, the substrate 10 may be a glass substrate having a certain strength, but is not limited thereto, and the substrate 10 may include a flexible material such as polyimide.

[0042] The circuit unit 13 may include pixel circuits connected to wiring such as data lines, gate lines, and power lines, and a gate driver connected to the gate lines.

[0043] The circuit unit 13 may include circuit elements such as transistors implemented as TFTs (Thin Film Transistors) and capacitors, etc. The wiring and circuit elements of the circuit unit 13 may be implemented with a plurality of insulating layers, two or more metal layers separated by insulating layers, and an active layer including a semiconductor material.

[0044] The light emitting element unit 15 may have an element structure such as an OLED (Organic Light Emitting Diode) display, a quantum dot display, a micro LED (Micro Light Emitting Diode) display, etc. Hereinafter, an OLED structure including an organic compound layer will be described as an example.

[0045] The organic compound layer may include, but is not limited to, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL).

[0046] When a voltage is applied to the anode and cathode of the OLED, holes that have passed through the hole transport layer HTL and electrons that have passed through the electron transport layer ETL are transferred to the emission layer EML to form excitons, which can cause the emission layer EML to emit visible light.

[0047] The light emitting element unit 15 is arranged on pixels that selectively transmit red, green and blue wavelengths, and may further include a color filter array.

[0048] The light emitting element portion 15 may be covered by a protective film, and the protective film may be covered by a sealing portion 17. The protective film and the sealing portion 17 may have a structure in which organic insulating layers and inorganic insulating layers are alternately stacked. The inorganic insulating layer can block the penetration of moisture and oxygen. The organic insulating layer can flatten the surface of the inorganic insulating layer. Therefore, when the organic insulating layer and the inorganic insulating layer are stacked in multiple layers, the path of moisture and oxygen movement becomes longer compared to a single layer, and the penetration of moisture / oxygen that affects the light emitting element portion 15 can be effectively blocked.

[0049] A polarizing plate 19 may be disposed on the light emitting element unit 15. The polarizing plate 19 may improve the outdoor visibility of the display device. The polarizing plate 19 may reduce light reflected from the surface of the display panel and block light reflected from the metal of the circuit unit 13, thereby improving the brightness of the pixels.

[0050] The light-transmitting areas TA may be formed between the display areas DA. The first non-display area NDA1 may be disposed to surround the light-transmitting areas TA. The first non-display area NDA1 may have a plurality of dam structures to protect the light-emitting elements of the display area DA from oxygen or other elements that may flow in from the light-transmitting areas TA.

[0051] The light-transmitting area TA may have a through-hole structure for injecting light into a sensor 40 such as a camera. However, this is not necessarily limited to this, and the light-transmitting area TA may have pixels arranged therein with low density.

[0052] The substrate 10 may include a first opening 11 disposed in the light-transmitting region TA. The first opening 11 may have a tapered shape that narrows toward the cover glass 20. However, the present invention is not limited thereto, and the first opening 11 may have a tapered shape that widens toward the cover glass 20, or may have a constant width in the thickness direction. The tapered shape of the first opening 11 may be variously modified depending on the type of etching solution and the etching method.

[0053] A first etch stop layer ES1 may be disposed on the first opening 11 of the substrate 10. Also, a second etch stop layer ES2 may be disposed on the edge of the substrate 10. The first etch stop layer ES1 and the second etch stop layer ES2 may prevent an etching solution from penetrating into the inside of the panel when etching the substrate 10. The first etch stop layer ES1 and the second etch stop layer ES2 may include an organic material that is resistant to an etching solution. Exemplarily, the etch stop layer may include one selected from the group consisting of polyether-based polymers, silicon-based polymers, acrylic-based polymers, polyolefin-based polymers, and copolymers thereof. However, the etch stop layer is not necessarily limited thereto, and may include various materials that are resistant to an etching solution.

[0054] The first etch stop layer ES1 and the second etch stop layer ES2 may be formed by extending from at least one of the layers constituting the circuit unit 13, the light emitting element unit 15, the sealing unit 17, and the touch unit 18. That is, the first etch stop layer ES1 and the second etch stop layer ES2 may be dummy layers of the circuit unit 13, the light emitting element unit 15, the sealing unit 17, and the touch unit 18. With this configuration, the etch stop layer can be formed without adding a separate process.

[0055] According to the embodiment, the first etch stop layer ES1 may include a protrusion P1 protruding into the first opening 11. The protrusion P1 may be defined as a portion protruding from an upper surface of the first opening 11 toward the light transmitting region TA. Such a protrusion P1 may be formed during the process of laser cutting the etch stop layer.

[0056] Referring to FIG. 3, the substrate 10 includes a first opening 11. The light-transmitting region of the substrate 10 overlaps the first opening 11 of the substrate 10 in a plan view. Here, the etch stop layer ES1 is adjacent to the first opening 11. As illustrated in FIG. 3, the coating layer 30 is between the etch stop layer ES1 and the substrate 10. In some embodiments, the etch stop layer ES1 is present on all of the substrate 10 and the coating layer 30. The etch stop layer ES1 includes an upper surface US, a lower surface LS, and a side surface SSS between the upper surface US and the lower surface LS. In some embodiments, the lower surface LS of the etch stop layer ES1 directly contacts the substrate 10 and the coating layer 30.

[0057] Also, as shown in the figure, a polarizer 19 may be disposed on the substrate 10 and the coating layer 30. In some cases, the polarizer 19 may be in direct contact with the upper surface US and the side surface SSS of the etch stop layer ES1, but is not necessarily limited to this.

[0058] A coating layer 30 may be formed on the rear surface of the substrate 10. The coating layer 30 may be formed of an organic material, such as a polyether-based polymer or an acrylic-based polymer.

[0059] The coating layer 30 may include a side coating layer 31 formed on the inner surface of the first opening 11 and a back coating layer 32 disposed on the lower part of the substrate. The lower surface 31a of the side coating layer 31 may be formed to be recessed toward the etch stop layer. However, this is not necessarily limited thereto, and the side coating layer 31 may not shrink due to the material. Therefore, the lower surface 31a of the side coating layer 31 may be substantially flat even after curing is completed.

[0060] The first inclined surface 11a of the first opening 11 and the side surface S11 of the protrusion P1 of the first etch stop layer may have different inclinations. Exemplarily, the inclination angle of the side surface S11 of the protrusion P1 may be greater than the inclination angle of the first inclined surface 11a. This is because the first opening 11 is etched by an etching solution to have a tapered shape, while the first etch stop layer ES1 is cut by a laser to form a relatively vertical cross section. The side surface S21 of the coating layer 30 disposed under the protrusion P1 may have the same inclination angle as the side surface S11 of the protrusion P1.

[0061] However, the present invention is not limited to this, and the first inclined surface 11a may have the same inclination as the side surface of the first etch stop layer ES1, or the first inclined surface 11a may have a rounded shape.

[0062] 2 and 4, a second non-display area NDA2 may be disposed at an edge of the display panel, and may be a margin required when a plurality of panels are separated from each other by a mother glass substrate.

[0063] The substrate 10 may include a second inclined surface 12a formed on its edge. The second inclined surface 12a may have the same angle as the first inclined surface 11a formed in the first opening 11. The first opening 11 and the second inclined surface 12a may have the same inclination angle and etching depth because they are formed simultaneously by an etching solution.

[0064] According to the embodiment, in the process of etching the mother glass substrate and separating it into a plurality of display panels, the first opening 11 can be simultaneously formed in the substrate of each display panel. Therefore, the opening can be formed without reducing the rigidity and without additional equipment. Also, by changing the mask pattern, openings of various shapes can be formed.

[0065] The second etch stop layer ES2 disposed in the second non-display area NDA2 can prevent the etching solution from penetrating into the interior of the panel when etching the mother glass substrate in order to separate multiple display panels.

[0066] The second etch stop layer ES2 may extend from at least one of the circuit unit 13, the light emitting element unit 15, the encapsulation unit 17, and the touch unit 18. Alternatively, the second etch stop layer may be formed simultaneously during the process of forming at least one of the circuit unit 13, the light emitting element unit 15, the encapsulation unit 17, and the touch unit 18. With this configuration, the second etch stop layer ES2 can be formed without adding a separate process.

[0067] According to the embodiment, the second etch stop layer ES2 may include a protrusion P2 protruding outward from the second inclined surface 12a. Such protrusion P2 may prevent the display panel from being damaged when the second etch stop layer ES2 is laser cut.

[0068] The side surface S22 of the coating layer 30 disposed under the protrusion P2 may have the same inclination angle as the side surface S12 of the protrusion P2. 5a, the first etch stop layer ES1 may include first to third sub-layers ES11, ES12, and ES13. The first sub-layer ES11 may be an inorganic insulating layer, and the third sub-layer ES13 may be an organic insulating layer. Since the organic insulating layer has a relatively weak adhesive strength with the substrate 10, the inorganic insulating layer may improve the adhesive strength between the substrate 10 and the organic insulating layer. The inorganic insulating layer may be etched if it comes into contact with an etching solution during the substrate etching process.

[0069] The second sub-layer ES12 may be a metal layer. The second sub-layer ES12 may include molybdenum (Mo), which has a relatively high chemical resistance to the etching solution compared to the first sub-layer ES11. However, the second sub-layer ES12 is not necessarily limited thereto, and may be omitted in some cases.

[0070] The coating layer 30 may entirely fill the first opening 11. Therefore, when the first etch stop layer ES1 is cut with a laser, the coating layer 30 formed in the first opening 11 may also be cut to have the same cross section. Therefore, the cross section of the first etch stop layer ES1 and the cross section of the coating layer 30 formed in the first opening 11 may be parallel to each other.

[0071] The first inclined surface 11a of the substrate 10 may have a rounded shape rather than a tapered shape. That is, the first sub-layer ES11 is etched to expose the upper surface of the substrate, and the upper surface of the substrate is also etched so that the first inclined surface 11a of the opening has a rounded shape.

[0072] Referring to Fig. 5b, the second etch stop layer ES2 may include a first sub-layer ES21 and a second sub-layer ES22. The first sub-layer ES21 may be an inorganic insulating layer, and the second sub-layer ES22 may be an organic insulating layer. However, this is not necessarily limited thereto, and the second etch stop layer may have a layer structure as shown in Fig. 5a.

[0073] The first etch stop layer ES1 and the second etch stop layer ES2 may have the same layer structure or different layers. For example, it may be possible to extend a part of the layer of the display area DA to the first non-display area NDA1, but it may be difficult to extend it to the second non-display area NDA2. In this case, the layer structures of the first etch stop layer ES1 and the second etch stop layer ES2 may be different.

[0074] Also, the first etch stop layer ES1 may be formed to extend continuously in the display area DA, while the second etch stop layer ES2 may be formed to be disconnected from the display area DA, or, conversely, the second etch stop layer ES2 may be formed to extend in the display area DA, while the first etch stop layer ES1 may be formed to be disconnected from the display area DA.

[0075] FIG. 6 is a diagram showing a shape in which an etch stop layer surrounds a light transmitting region.

[0076] 6, the first etch stop layer ES1 may be disposed to entirely surround the periphery of the first opening 11. Also, the second etch stop layer ES2 may be disposed to entirely surround the outer periphery of the display panel.

[0077] According to the embodiment, the first etch stop layer ES1 is arranged to completely surround the periphery of the first opening 11, and the second etch stop layer ES2 is arranged to completely surround the outer circumferential surface of the display panel. Therefore, when a through hole is formed on the inside of the substrate at the same time as cutting the mother glass substrate, it is possible to prevent the etching solution from penetrating into the inside of the panel.

[0078] According to the embodiment, the openings 11 of various shapes can be formed in the glass substrate by using etching. Therefore, compared to the existing scribing, breaking, and grinding techniques, it is advantageous in that it is possible to form various openings while maintaining the rigidity of the substrate. Also, it is advantageous in that the openings 11 can be formed at the same time as processing the side surface of the substrate 10 to form a notch or rounding on the side surface of the substrate 10.

[0079] FIG. 7 is a cross-sectional view taken along line II-II' of FIG.

[0080] Referring to FIG. 7, the display area DA may include a substrate 10, a multi-buffer layer 102, and an active buffer layer 103, and a first transistor 120 may be disposed on the active buffer layer 103.

[0081] A first semiconductor layer 123 constituting a first transistor 120, a first gate electrode 122 and a lower gate insulating layer 104 for insulation may be disposed on the first semiconductor layer 123. A first lower interlayer insulating layer 105 and a second lower interlayer insulating layer 106 may be sequentially disposed on the first gate electrode 122, and an upper buffer layer 107 may be disposed.

[0082] The multi-buffer layer 102 can retard the spread of moisture or oxygen that has penetrated into the substrate 10, and can be formed by alternately stacking at least one layer of silicon nitride (SiNx) and silicon oxide (SiOx).

[0083] The active buffer layer 103 can protect the first semiconductor layer 123 and block various types of defects from the substrate 10. The active buffer layer 103 can be made of a-Si, silicon nitride (SiNx), silicon oxide (SiOx), or the like.

[0084] The first semiconductor layer 123 of the first thin film transistor 120 may be made of a polycrystalline semiconductor layer, and the first semiconductor layer 123 may include a channel region, a source region, and a drain region.

[0085] A polycrystalline semiconductor layer has higher mobility, lower energy consumption, and superior reliability than an amorphous semiconductor layer and an oxide semiconductor layer, and therefore may be used in a driving transistor.

[0086] The first gate electrode 122 may be disposed on the lower gate insulating layer 104 and may be disposed to overlap the first semiconductor layer 123 .

[0087] A second transistor 130 may be disposed on the upper buffer layer 107 , and a light-shielding layer 136 may be disposed below a region corresponding to the second transistor 130 .

[0088] A light-shielding layer 136 may be disposed on the first lower interlayer insulating layer 105 in an area corresponding to the second transistor 130, and the second semiconductor layer 133 of the second transistor 130 may be disposed on the second lower interlayer insulating layer 106 and the upper buffer layer 107 so as to overlap the light-shielding layer 136.

[0089] An upper gate insulating layer 137 for insulating the second gate electrode 132 and the second semiconductor layer 133 may be disposed on the second semiconductor layer 133 .

[0090] The upper interlayer insulating layer 108 may be disposed on the second gate electrode 132. The first gate electrode 122 and the second gate electrode 132 may be a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, but are not limited thereto.

[0091] The first and second lower interlayer insulating layers 105, 106 may be formed of an inorganic insulating layer having a higher hydrogen particle content than the upper interlayer insulating layer 108. For example, the first and second lower interlayer insulating layers 105, 106 may be made of silicon nitride (SiNx) formed by a deposition process using NH3 gas, and the upper interlayer insulating layer 108 may be made of silicon oxide (SiOx). The hydrogen particles contained in the first and second lower interlayer insulating layers 105, 106 may diffuse into the polycrystalline semiconductor layer during the hydrogenation process to fill the voids in the polycrystalline semiconductor layer with hydrogen. As a result, the polycrystalline semiconductor layer may be stabilized, and the deterioration of the characteristics of the first transistor 120 may be prevented.

[0092] The second semiconductor layer 133 of the second transistor 130 may be formed after the activation and hydrogenation processes of the first semiconductor layer 123 of the first transistor 120, and in this case, the second semiconductor layer 133 may be formed of an oxide semiconductor. Since the second semiconductor layer 133 is not exposed to a high-temperature atmosphere in the activation and hydrogenation processes of the first semiconductor layer 123, damage to the second semiconductor layer 133 can be prevented, and reliability can be improved.

[0093] After the upper interlayer insulating layer 108 is disposed, a first source contact hole 125S and a first drain contact hole 125D may be formed corresponding to the source and drain regions of the first transistor, and a second source contact hole 135S and a second drain contact hole 135d may be formed corresponding to the source and drain regions of the second transistor 130, respectively.

[0094] The first source contact hole 125S and the first drain contact hole 125D may be formed continuously from the upper interlayer insulating layer 108 to the lower gate insulating layer 104, and the second source contact hole 135S and the second drain contact hole 135D may be formed in the second transistor 130.

[0095] The first source electrode 121 and the first drain electrode 124 corresponding to the first transistor 120 and the second source electrode 131 and the second drain electrode 134 corresponding to the second transistor 130 can be formed simultaneously, thereby reducing the number of processes for forming the source and drain electrodes of the first transistor 120 and the second transistor 130.

[0096] The first source and drain electrodes 121, 124 and the second source and drain electrodes 131, 134 may be a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof, but are not limited thereto.

[0097] The first source and drain electrodes 121, 124, the connecting electrode 145 and the second source and drain electrodes 131, 134 may be configured in a three-layer structure, for example, the first source electrode 121 may be configured in a first layer 121a, a second layer 121b and a third layer 121c, and the other source and drain electrodes may have the same structure.

[0098] In some embodiments, the protruding patterns ST may have the same layer structure as the source electrodes or connecting electrodes 145 of the circuit unit. For example, the protruding patterns ST may have a three-layer structure. As shown in Fig. 11, the protruding patterns ST may be formed by sequentially stacking a first pattern layer ML1 having a first thickness D1, a second pattern layer ML2 having a second thickness D2, and a third pattern layer ML3 having a third thickness D3.

[0099] A storage capacitor 140 may be disposed between the first transistor 120 and the second transistor 130. The storage capacitor 140 may be formed by overlapping a storage lower electrode 141 and a storage upper electrode 142 with a first lower interlayer insulating layer 105 interposed therebetween.

[0100] The storage lower electrode 141 is located on the lower gate insulating layer 104, and may be formed in the same layer and made of the same material as the first gate electrode 122. The storage upper electrode 142 may be electrically connected to the pixel circuit through a storage supply line 143. The storage upper electrode 142 may be formed in the same layer and made of the same material as the light blocking layer 136. The storage upper electrode 142 is exposed through a storage contact hole 144 penetrating the second lower interlayer insulating layer 106, the upper buffer layer 107, the upper gate insulating layer 137, and the upper interlayer insulating layer 108, and is connected to the storage supply line 143.

[0101] The storage upper electrode 142 is separated from the light blocking layer 136, but may be formed as an integrated type connected to each other. The storage supply line 143 may be formed of the same material on the same plane as the first source and drain electrodes 121, 124 to the second source and drain electrodes 131, 134, so that the storage supply line 143 can be formed simultaneously with the first source and drain electrodes 121, 124 to the second source and drain electrodes 131, 134 in the same mask process.

[0102] A protective layer 109 may be formed by depositing an inorganic insulating material such as SiNx or SiOx over the entire surface of the substrate 10 on which the first source and drain electrodes 121, 124, the second source and drain electrodes 131, 134, and the storage supply line 143 are formed.

[0103] A first planarization layer 110 may be formed on the protective film 109. In particular, the first planarization layer 110 may be disposed by coating an organic insulating material, such as an acrylic resin, on the entire surface of the protective film 109.

[0104] A passivation film 109 and a first planarization layer 110 are disposed, and a contact hole exposing a first source electrode 121 or a first drain electrode 124 of a first transistor 120 may be formed through a photolithography process. A connection electrode 145 made of a material such as Mo, Ti, Cu, AlNd, Al, and Cr or an alloy thereof may be disposed in a contact hole region exposing the first drain electrode 124.

[0105] A second planarization layer 111 may be disposed on the connecting electrode 145, and a contact hole exposing the connecting electrode 145 may be formed in the second planarization layer 111, so that the light emitting device 150 connected to the first transistor 120 may be disposed therein.

[0106] The light emitting element 150 may include an anode electrode 151 connected to the first drain electrode 124 of the first transistor 120, at least one light emitting stack 152 formed on the anode electrode 151, and a cathode electrode 153 formed on the light emitting stack 152.

[0107] The light-emitting stack 152 may include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, and in a tandem structure in which multiple light-emitting layers are stacked, a charge generation layer may be additionally disposed between the light-emitting layers. In the case of the light-emitting layer, each subpixel may emit a different color.

[0108] The anode electrode 151 may be connected to the connecting electrode 145 exposed through a contact hole penetrating the second planarization layer 111. The anode electrode 151 may be formed in a multi-layer structure including a transparent conductive film and an opaque conductive film having high reflectance. The transparent conductive film may be made of a material having a relatively high work function such as indium tin oxide (ITO) or indium zinc oxide (IZO), and the opaque conductive film may be made of a single layer or a multi-layer structure including Al, Ag, Cu, Pb, Mo, Ti, or an alloy thereof.

[0109] For example, the anode electrode 151 may be formed in a structure in which a transparent conductive film, an opaque conductive film, and a transparent conductive film are sequentially laminated, or in a structure in which a transparent conductive film and an opaque conductive film are sequentially laminated.

[0110] The anode electrode 151 may be disposed on the second planarization layer 111 so as to overlap not only the light-emitting area provided by the bank 154 but also the pixel circuit area in which the first and second transistors 120, 130 and the storage capacitor 140 are disposed, thereby increasing the light-emitting area.

[0111] The light-emitting stack 152 may be formed by stacking a hole transport layer, an organic light-emitting layer, and an electron transport layer in this order or in the reverse order on the anode electrode 151. Alternatively, the light-emitting stack 152 may further include a charge generation layer and may include first and second light-emitting stacks disposed opposite each other on either side.

[0112] The bank 154 may be formed to expose the anode electrode 151. The bank 154 may be formed of an organic material such as photoacrylic and may be a semi-transparent material, but is not limited thereto, and may be formed of an opaque material to prevent light interference between sub-pixels.

[0113] The cathode electrode 153 may be formed on an upper surface of the light emitting stack 152 to face the anode electrode 151 across the light emitting stack 152. When the cathode electrode 153 is applied to a top emission type organic light emitting display device, it may be formed as a transparent conductive film by forming a thin layer of indium tin oxide (ITO), indium zinc oxide (IZO) or magnesium silver (Mg-Ag).

[0114] An encapsulant 17 for protecting the light emitting element 150 may be formed on the cathode electrode 153. The light emitting element 150 may react with external moisture or oxygen due to the organic properties of the light emitting stack 152, resulting in dark spots or pixel shrinkage, and may be disposed on the cathode electrode 153 to prevent this.

[0115] The encapsulation portion 17 may be composed of a first inorganic insulating layer 171 , a foreign matter compensation layer 172 , and a second inorganic insulating layer 173 .

[0116] The touch unit 18 may be disposed on the upper portion of the encapsulation unit 17. The touch unit 18 may include a first touch-planarization layer 181, a touch electrode 182, and a second touch-planarization layer 183. The first touch-planarization layer 181 and the second touch-planarization layer 182 may be disposed to eliminate a step at a point where the touch electrode 182 is disposed and to provide good electrical insulation.

[0117] According to the embodiment, the first transistor 120 made of low-temperature polysilicon and the second transistor 120 made of an oxide semiconductor are disposed in different layers, so that thin film transistors TFT having different driving characteristics can be disposed in the display device 100. However, this is not necessarily limited thereto, and only thin film transistors having the same driving characteristics may be used.

[0118] Fig. 8 is an enlarged view of a portion C in Fig. 6. Fig. 9 is an enlarged view of a portion D in Fig. 8. Fig. 10 is a diagram showing a display device according to a first embodiment of the present invention. Fig. 11 is an enlarged view of a portion E in Fig. 10. Fig. 12 is an enlarged view of a portion F in Fig. 10.

[0119] 8 and 9, the light-transmitting area TA where various sensors are arranged may be formed in a circular shape, and the first non-display area NDA1 may be arranged around the light-transmitting area TA. However, this is not necessarily limited to this, and the light-transmitting area TA may have various shapes such as a polygon or an ellipse, and the shape of the first non-display area NDA1 may also change accordingly.

[0120] The first non-display area NDA1 may include a wiring area NDA13 in which wiring TL bypassing the light-transmitting area TA is arranged, a moisture permeation prevention area NDA11 arranged between the wiring area NDA13 and the light-transmitting area TA, and a dummy area NDA12 in which the first etch stop layer ES1 is formed. The moisture permeation prevention area NDA11 and the dummy area NDA12 may be arranged to surround the light-transmitting area TA. The dummy area NDA12 may also serve to prevent moisture permeation.

[0121] 10, the moisture permeation prevention area NDA11 may be formed with a dam DAM and a plurality of protruding patterns ST by using a plurality of layers extending in the display area, and the number of the dam DAM and the protruding patterns ST is not particularly limited.

[0122] The dam DAM and the protruding pattern ST may be arranged in the shape of a closed loop surrounding the light-transmitting area TA. With this configuration, it is possible to prevent moisture from penetrating into the display area through the light-transmitting area TA. The width of the moisture permeation prevention area NDA11 may have a predetermined distance to prevent moisture permeation.

[0123] The dummy area NDA12 may be an area formed for margins during etching and / or laser cutting of the substrate 10. Without the dummy area NDA12, the moisture permeability prevention area NDA11 may be damaged during laser cutting, making it vulnerable to moisture penetration. In addition, the substrate 10 may be damaged by the laser. The dummy area NDA12 may be a minimal layer disposed on the substrate 10 to facilitate laser cutting.

[0124] A first etch stop layer ES1 is disposed in the dummy area NDA12 to prevent the etching solution from penetrating into the interior of the panel when etching the substrate 10. The first etch stop layer ES1 may be composed of an organic insulating layer or a metal layer that is not etched by the etching solution. The metal layer may contain molybdenum (Mo), which has high corrosion resistance to the etching solution.

[0125] A plurality of protruding patterns ST may be disposed in the first non-display area NDA1. The protruding patterns ST may be formed to have an undercut shape to disconnect the light-emitting stacks 152 formed on the first non-display area NDA1.

[0126] The plurality of protruding patterns ST may include a first protruding pattern ST1 and a second protruding pattern ST2 arranged in the moisture permeation prevention area NDA11, and a third protruding pattern ST3 arranged in the dummy area NDA12.

[0127] The plurality of first protruding patterns ST1 may be disposed between the display area and the dam DAM, and the plurality of second protruding patterns ST2 may be disposed between the dam DAM and the dummy area NDA12. The third protruding pattern ST3 may be disposed on the first etch stop layer ES1 in the dummy area NDA12.

[0128] The first protruding patterns ST1, the second protruding patterns ST2, and the third protruding patterns ST3 may all have the same shape, but are not limited to this. For example, the first protruding patterns ST1 and the second protruding patterns ST2 may have the same shape, but the third protruding pattern ST3 may have a different shape. Each of the protruding patterns ST1, ST2, and ST3 may be modified in various ways as long as it has a structure that can disconnect the light-emitting stack 152.

[0129] The substrate 10 may have a first opening 11 formed in a region corresponding to the light-transmitting region TA. The diameter of the first opening 11 may be larger than the light-transmitting region TA.

[0130] A side coating layer 31 may be formed on a side surface of the first opening 11. The side coating layer 31 may cover a side surface of the first opening 11. A first etch stop layer ES1 may be disposed on top of the side coating layer 31.

[0131] The side coating layer 31 may be made of an organic material that absorbs light. In one embodiment, the side coating layer 31 may include an organic material having an optical density (OD) of 1.0 or more.

[0132] A rear coating layer 32 may be disposed on the bottom of the substrate 10 and the bottom of the side coating layer 31. The rear coating layer 32 may be further extended on the rear surface of the substrate 10 to the side coating layer 31.

[0133] In the display device according to the embodiment, the rear coating layer 32 is formed to cover the side coating layer 31, thereby improving the adhesive strength of the rear coating layer 32. The rear coating layer 32 may be formed only on the rear surface of the substrate 10 to protect the substrate 10. However, the rear coating layer 32 made of an organic material has a relatively low adhesive strength with the substrate 10 and may be peeled off from the substrate 10 due to the external environment or impact. Therefore, the rear coating layer 32 is in contact with the side coating layer 31 made of an organic material at the outer periphery of the substrate 10, thereby improving the adhesive strength of the rear coating layer 32. Thus, the rear coating layer 32 can be prevented from being peeled off from the substrate 10.

[0134] According to an embodiment, the side of the light-transmitting region TA may be formed vertically, that is, the side of the back coating layer 32, the side of the side coating layer 31, the side of the first etch stop layer ES1, and the side of the polarizer 19 forming the side of the light-transmitting region TA may be cut by a laser to have the same vertical surface.

[0135] 11, the protruding patterns ST may be formed by sequentially stacking a first pattern layer ML1, a second pattern layer ML2, and a third pattern layer ML3. The first pattern layer ML1 and the third pattern layer ML3 may be made of titanium (Ti), and the second pattern layer ML2 may be made of aluminum (Al).

[0136] The protruding patterns ST according to the embodiment may be made of the same material as the source / drain electrodes 121, 124 or the connecting electrode 145 of the display area. That is, the protruding patterns ST may be formed simultaneously when forming the connecting electrode 145, and then etched to be separated into a plurality of patterns. At this time, the second pattern layer ML2 made of aluminum may be etched relatively more due to a difference in etching reaction speed. Therefore, the width of the second pattern layer ML2 may be smaller than the width of the third pattern layer ML2, resulting in an undercut shape. Therefore, the light emitting stacks 152 formed on the protruding patterns ST may not be formed continuously, and may be disconnected between the protruding patterns ST. Therefore, the permeation path of moisture may be blocked.

[0137] According to the embodiment, the plurality of protruding patterns ST can prevent peeling of an inorganic insulating layer additionally disposed thereon. The inorganic insulating layer can be peeled off relatively easily during laser etching or due to external impact. However, according to the embodiment, the inorganic insulating layer is filled between the plurality of protruding patterns ST having an undercut shape, so that peeling can be prevented. Therefore, the penetration of moisture can be effectively prevented.

[0138] Referring to FIG. 12, the third protruding pattern ST3 is disposed on the etch stop layer ES1. Here, the third protruding pattern ST3 includes a first pattern layer ML1 having a first thickness D1, a second pattern layer ML2 having a second thickness D2, and a third pattern layer ML3 having a third thickness D3. In some embodiments, the second thickness D2 of the second pattern layer ML2 may be thicker than the third thickness D3 of the third pattern layer ML3 or the first thickness D1 of the first pattern layer ML1. In some embodiments, the first thickness D1 of the first pattern layer ML1 may have the same thickness as the third thickness D3 of the third pattern layer ML3. In other embodiments, the first thickness D1 of the first pattern layer ML1 may have a different thickness from the third thickness D3 of the third pattern layer ML3. For example, the first thickness D1 of the first pattern layer ML1 may be greater than or less than the third thickness D3 of the third pattern layer ML3.

[0139] As shown in the figure, the third pattern layer ML3 completely overlaps the second pattern layer ML2 in plan view.

[0140] The light emitting stack 152 is disposed on the protruding pattern ST3. In some embodiments, the light emitting stack (more specifically, the first portion 152FP of the light emitting stack) completely overlaps the third pattern layer ML3 on a planar surface.

[0141] 12, the light-emitting stack 152 includes a first portion 152FP and a second portion 152SP. The second portion 152SP of the light-emitting stack 152 is disposed spaced apart from the first portion 152FP of the light-emitting stack 152. Here, the first portion 152FP of the light-emitting stack is in contact with the third pattern layer ML3 of the third protruding pattern ST3. The second portion 152SP of the light-emitting stack 152 is adjacent to but spaced apart from the first pattern layer ML1 of the third protruding pattern ST3.

[0142] The insulating layer 171 is located on the etch stop layer ES1 and the third protruding pattern ST3. In one embodiment, the insulating layer 171 is in direct contact with the second portion 152SP of the light emitting stack, the etch stop layer ES1 and the first pattern layer ML1 of the third protruding pattern ST3.

[0143] 12, a plurality of third protruding patterns ST3 may be disposed on the first etch stop layer ES1. The third protruding pattern ST3 disposed outermost among the plurality of third protruding patterns ST3 may protrude further into the light-transmitting region TA than the first inclined surface 11a of the first opening 11 of the substrate 10. However, this is not necessarily limited thereto, and the first inclined surface 11a of the first opening 11 of the substrate 10 may protrude further into the light-transmitting region TA than the third protruding pattern ST3 disposed outermost among the third protruding patterns ST3.

[0144] The light emitting stacks 152 formed on the third protruding patterns ST3 are not formed continuously, and may be disconnected between the third protruding patterns ST3, thereby blocking the moisture penetration path.

[0145] According to the embodiment, the plurality of third protruding patterns ST3 are formed in the dummy area NDA12, so that the inorganic insulating layer can be prevented from being peeled off during laser etching or when an external impact is applied.

[0146] The multiple third protruding patterns ST3 may be formed directly on the first etch stop layer ES1, or may be disposed on a dummy layer disposed on the first etch stop layer ES1.

[0147] Fig. 13 is a diagram showing a front display panel in which a light-transmitting region is formed, and Figs. 14a to 14e are diagrams showing a process of etching a substrate to form a light-transmitting region in a display panel.

[0148] 13 and 14a, a mask pattern MP1 may be formed under the substrate 10. According to an embodiment, the mask pattern MP1 may be formed according to the number and shape of the first openings to be formed in the substrate 10, and then exposed to an etching solution to simultaneously form a plurality of openings. In addition, the openings may be separated into panel units on the mother glass substrate at the same time as they are formed.

[0149] As shown in Fig. 14b, when an etching solution is brought into contact with the exposed area, the substrate 10 exposed between the mask patterns MP1 can be etched. At this time, the inorganic insulating layers 102 and 103 formed on the etched substrate 10 can be etched by the etching solution. However, the first etch stop layer ES1 disposed on the inorganic insulating layers 102 and 103 prevents the etching solution from penetrating into the panel. The first etch stop layer ES1 can be formed using various organic insulating layers or metal films formed in the display area.

[0150] 14c, the first opening 11 of the substrate 10 may be filled with a side coating layer 31. When the side coating layer 31 is subsequently cured, it may shrink by a certain height h1, forming a curvature on the lower surface 31a of the side coating layer 31. However, the side coating layer 31 may not shrink depending on the material.

[0151] 14d, the rear coating layer 32 may be formed on the entire lower surface of the substrate 10 and the lower surface of the side coating layer 31. However, this is not necessarily limited thereto, and the rear coating layer 32 may be formed only on the lower surface of the substrate 10.

[0152] 14e, a laser may be irradiated to the first opening of the substrate 10 to form a light transmitting area TA. At this time, the first etch stop layer ES1 and the third protruding pattern ST3 disposed on the upper portion of the substrate 10 may be cut by the laser. According to the embodiment, the contact area between the protruding pattern ST and the inorganic insulating layer may be increased, thereby improving the phenomenon in which the inorganic insulating layer is peeled off during laser irradiation.

[0153] 15 is a diagram showing a display device according to a second embodiment of the present invention, and FIG 16 is an enlarged view of a portion H in FIG 15.

[0154] 15, a plurality of protruding patterns ST may be arranged in the first non-display area NDA1. The protruding patterns ST may be formed to have an undercut shape to break the light-emitting stacks formed on the first non-display area NDA1.

[0155] The plurality of protruding patterns ST may include a first protruding pattern ST1 and a second protruding pattern ST2 arranged in the moisture permeation prevention area NDA11, and a third protruding pattern ST3 arranged in the dummy area NDA12. The plurality of first protruding patterns ST1 may be arranged between the display area and the dam DAM, and the plurality of second protruding patterns ST2 may be arranged between the dam DAM and the dummy area NDA12.

[0156] According to an embodiment, the first protruding pattern ST1 and the second protruding pattern ST2 may have the same shape, but the third protruding pattern ST3 may have a different shape. The first protruding pattern ST1 and the second protruding pattern ST2 may be formed by sequentially stacking the first pattern layer ML1, the second pattern layer ML2, and the third pattern layer ML3, as described in FIG.

[0157] The first pattern layer ML1 and the third pattern layer ML3 may be made of titanium (Ti), and the second pattern layer ML2 may be made of aluminum (Al). The first protruding pattern ST1 and the second protruding pattern ST2 according to the embodiment may be made of the same material as the source electrode or connecting electrode 145 of the display area. That is, the plurality of protruding patterns ST may be separated into a plurality of pieces after being formed as a dummy layer when forming the second connecting electrode 145. At this time, the second pattern layer ML2 may be etched relatively further due to the difference in etching speed. Therefore, the width of the second pattern layer ML2 may be larger than the width of the third pattern layer ML3, resulting in an undercut shape.

[0158] The third protruding pattern ST3 may be disposed on the first sub-layer ES11 and the second sub-layer ES12. The first sub-layer ES11 may be the same layer as the first planarization layer of the display area, and the second sub-layer ES12 may be the same layer as the second planarization layer of the display area.

[0159] The third protruding pattern ST3 may be formed using the bank layer 154 disposed on the second sub-layer ES12. According to the embodiment, the third protruding pattern ST3 causes the light emitting stack 152 to have an uneven shape, so that a long moisture penetration path can be formed. However, this is not necessarily limited thereto, and the third protruding pattern ST3 may be formed in an undercut shape to break the light emitting stack.

[0160] 15, the light emitting stack 152 may have a plurality of trenches TR (or trench portions) in the dummy region NDA12. Here, the light emitting stack 152 may be continuously connected in the dummy region NDA12.

[0161] 16, the trench portion TR of the light emitting stack 152 has a bottom surface BSTR. In some embodiments, the bottom surface BSTR of the trench portion TR may extend into the etch stop layer ES12. For example, the etch stop layer ES12 may have a top surface TSS and the bottom surface BSTR of the trench portion TR may extend into the etch stop layer ES12 such that the bottom surface BSTR is below the top surface TSS.

[0162] 17 is a diagram showing a display device according to a third embodiment of the present invention, and FIG 18 is an enlarged view of a portion I in FIG 17.

[0163] 17, a plurality of protruding patterns ST may be arranged in the first non-display area NDA1. The protruding patterns ST may be formed to have an undercut shape to disconnect the light-emitting stacks 152 formed on the first non-display area NDA1.

[0164] The plurality of protruding patterns ST may include a first protruding pattern ST1 and a second protruding pattern ST2 arranged in the moisture permeation prevention area NDA11, and a third protruding pattern ST3 arranged in the dummy area NDA12. The plurality of first protruding patterns ST1 may be arranged between the display area and the dam DAM, and the plurality of second protruding patterns ST2 may be arranged between the dam DAM and the dummy area NDA12.

[0165] According to the embodiment, the first protruding pattern ST1 and the second protruding pattern ST2 may have the same shape but different from each other, and the second protruding pattern ST2 and the third protruding pattern ST3 may have the same shape.

[0166] The second protruding pattern ST2 and the third protruding pattern ST3 may be formed by sequentially stacking a first pattern layer ML1, a second pattern layer ML2, and a third pattern layer ML3 as shown in Fig. 11. The first pattern layer ML1 and the third pattern layer ML3 may be made of titanium (Ti), and the second pattern layer ML2 may be made of aluminum (Al). The width of the third pattern layer ML3 may be larger than the width of the second pattern layer ML2, so that the third pattern layer ML3 has an undercut shape.

[0167] The first protruding pattern ST1 may include a 1-1 pattern layer 112 and a 1-2 pattern layer 113 disposed on the buffer layers 102 and 103. The 1-1 pattern layer 112 may be an inorganic insulating layer, and the 1-2 pattern layer 113 may be an organic insulating layer. For example, the 1-1 pattern layer 112 may be the same layer as the upper interlayer insulating layer of the display area, and the 1-2 pattern layer 113 may be the same layer as the second planarization layer. However, the 1-1 pattern layer 112 and the 1-2 pattern layer 113 may be formed using various inorganic / organic insulating layers. Also, the 1-1 pattern layer 112 and the 1-2 pattern layer 113 may be formed entirely of inorganic insulating layers or entirely of organic insulating layers.

[0168] The first-2 pattern layer 113 may have a curvature on the top surface thereof, which may be formed by isotropic etching of an organic insulating layer, but is not limited thereto, and the top surface of the first-2 pattern layer may be flat.

[0169] 18, the thickness of the 1-2 pattern layer 113 increases from the edge EG of the first protruding pattern ST1 to the center CTR of the second protruding pattern ST1. For example, the 1-2 pattern layer 113 has a semicircular cross section, and the thickness of the 1-2 pattern layer 113 decreases from the center CTR to the edge EG. That is, the thickness T1 adjacent to the center CTR may be greater than the thickness T2 adjacent to the edge EG.

[0170] Fig. 19 is a view showing a display device according to a fourth embodiment of the present invention. Fig. 20 is a view showing a display device according to a fifth embodiment of the present invention. Fig. 21 is a view showing a display device according to a sixth embodiment of the present invention. Fig. 22 is a view showing a display device according to a seventh embodiment of the present invention.

[0171] 19, a plurality of first protruding patterns ST1 and a plurality of second protruding patterns ST2 may be formed in the moisture permeation prevention area NDA11. The plurality of first protruding patterns ST1 and the plurality of second protruding patterns ST2 each have a trapezoidal shape at the top and are formed with an undercut structure to disconnect the light emitting stack 152. In particular, the plurality of first protruding patterns ST1 and the plurality of second protruding patterns ST2 each have a trapezoidal cross section.

[0172] A first sub-layer ES11, a second sub-layer ES12, and a third sub-layer ES13 may be formed in the dummy area NDA12. The first sub-layer ES11 may be the same layer as the first planarization layer of the display area, the second sub-layer ES12 may be the same layer as the second planarization layer of the display area, and the third sub-layer ES13 may be the same layer as the bank layer of the display area. However, this is not necessarily limited thereto, and the first to third sub-layers ES11, ES12, and ES13 may be formed of various organic insulating layers and metal layers that are resistant to corrosion by a hydrofluoric acid solution. Referring to FIG. 20, the first sub-layer ES11 protrudes (PES) toward the display area and has an undercut shape, thereby disconnecting the light-emitting stack 152.

[0173] Referring to FIG. 21, the first etch stop layer ES1 may be extended from the dam DAM. With this configuration, the length of the first etch stop layer ES1 is increased, and a relatively sufficient dummy area NDA12 may be secured. Alternatively, as shown in FIG. 22, the first etch stop layer ES1 may be separated from the dam DAM. The third sub-layer ES13 may be formed with projections and recesses to form a long path for moisture to penetrate along the light emitting stack. Also, the groove formed in the third sub-layer ES13 may be formed in an undercut shape to break the light emitting stack.

[0174] The contents of the specification, including the above problems to be solved, means for solving the problems, and effects, do not specify essential features of the claims, and therefore the scope of the claims is not limited by the matters described in the specification.

[0175] Although the embodiments have been described in detail above with reference to the attached drawings, the present invention is not necessarily limited to these embodiments, and various modifications can be made within the scope of the technical idea of ​​the present invention. Therefore, the embodiments disclosed in the present invention are for illustration purposes, not for limiting the technical idea of ​​the present invention, and the scope of the technical idea of ​​the present invention is not limited by these embodiments. Therefore, the embodiments described above should be understood to be illustrative and not limiting in all respects. [Explanation of symbols]

[0176] 10: Substrate 11: First opening 12:Circuit section 15: Light emitting element TA: Translucent area ES1: First etch stop layer ES2: Second etch stop layer ES3: Third etch stop layer

Claims

1. a glass substrate including a display area, a light-transmitting area, and a non-display area surrounding the light-transmitting area; a circuit section and a light-emitting element section disposed on the display area; an etch stop layer disposed on the non-display area; a plurality of protruding patterns disposed on the non-display area; Including, the glass substrate includes a first opening disposed at a position corresponding to the light-transmitting region; The display device, wherein the plurality of protruding patterns are disposed on the etch stop layer.

2. The display device according to claim 1 , wherein the plurality of protruding patterns have an undercut shape.

3. The display device according to claim 1 , wherein the plurality of protruding patterns have the same layer structure as a source electrode of the circuit portion.

4. the etch stop layer is disposed adjacent the first opening; The display device according to claim 1 , wherein the etch stop layer includes at least one of an organic insulating layer, an inorganic insulating layer, and a metal layer.

5. a dam disposed in the non-display area; The plurality of protrusion patterns include a plurality of first protruding patterns disposed between the display area and the dam; a plurality of second protruding patterns disposed between the dam and the etch stop layer; a plurality of third protruding patterns disposed on the etch stop layer; The display device of claim 1 .

6. The display device according to claim 5 , wherein the first protruding patterns, the second protruding patterns, and the third protruding patterns have the same shape.

7. The display device according to claim 5 , wherein at least one of the first protruding patterns, the second protruding patterns, and the third protruding patterns is different in shape or material.

8. the first protruding patterns include a metal layer; the third protruding patterns include an organic insulating layer; The display device according to claim 7 , wherein the organic insulating layer of the plurality of third protruding patterns is a dummy layer of a bank layer in the display area.

9. the first protruding patterns include an inorganic insulating layer; The display device of claim 7 , wherein the third protruding patterns include a metal layer.

10. The plurality of first protruding patterns include A first pattern layer; a second pattern layer disposed on the first pattern layer; Including, 10. The display device of claim 9, wherein the first pattern layer is an inorganic insulating layer and the second pattern layer is an organic insulating layer.

11. a side coating layer disposed in the first opening, and a back coating layer disposed on a lower surface of the glass substrate and a lower surface of the side coating layer, The display device of claim 1 , wherein the lower surface of the side coating layer has a curvature.

12. a glass substrate including a display area, a light-transmitting area, and a non-display area surrounding the light-transmitting area; a circuit section and a light-emitting element section disposed on the display area; an etch stop layer disposed on the non-display area; a plurality of protruding patterns disposed on the non-display area; Including, the glass substrate includes a first opening disposed at a position corresponding to the light-transmitting region; Each of the plurality of protruding patterns includes a first pattern layer, a third pattern layer, and a second pattern layer disposed between the first pattern layer and the third pattern layer; A display device, wherein the width of the second pattern layer is smaller than the widths of the first pattern layer and the third pattern layer.

13. The display device of claim 12 , wherein the etch stop layer is disposed adjacent to the first opening.

14. a dam disposed in the non-display area; the plurality of protruding patterns include a plurality of first protruding patterns disposed between the display area and the dam, a plurality of second protruding patterns disposed between the dam and the etch stop layer, and a plurality of third protruding patterns disposed on the etch stop layer; The display device of claim 12 , wherein at least one of the first protruding patterns, the second protruding patterns, and the third protruding patterns is different in shape or material.

15. a substrate including a display region, a light-transmitting region, a non-display region surrounding the light-transmitting region, and a first opening overlapping the light-transmitting region in a plan view; an etch stop layer disposed adjacent the first opening; a coating layer disposed between the etch stop layer and the substrate; Including, The display device, wherein the etch stop layer is disposed over the substrate and the coating layer.

16. a polarizer disposed on the substrate and the coating layer; the etch stop layer has an upper surface, a lower surface, and a side surface disposed between the upper surface and the lower surface; a lower surface of the etch stop layer directly contacting the substrate and the coating layer; 16. The display of claim 15, wherein the polarizer directly contacts the top and side surfaces of the etch stop layer.

17. a light emitting stack disposed on the etch stop layer; the light emitting stack having a plurality of trench portions; The display of claim 15 , wherein the plurality of trench portions extend into the etch stop layer.

18. a dam disposed adjacent to the etch stop layer; a first protruding pattern disposed adjacent to the etch stop layer and between the first opening and the dam; a second protruding pattern disposed on the substrate and spaced apart from the etch stop layer and the dam; Including, The display device of claim 15 , wherein the dam is disposed between the first protruding pattern and the second protruding pattern.

19. the second protruding pattern includes a first pattern layer and a second pattern layer disposed on the first pattern layer; The display device of claim 18 , wherein one of the first pattern layer and the second pattern layer has a trapezoidal cross-sectional shape.

20. the second protruding pattern includes a first pattern layer and a second pattern layer disposed on the first pattern layer; The display device of claim 18 , wherein the second pattern layer has a thickness that increases from the edge to the center.

21. a first protruding pattern disposed adjacent to the etch stop layer, the first protruding pattern including a first pattern layer and a second pattern layer disposed on the first pattern layer; The display device of claim 15, wherein at least one of the first pattern layer and the second pattern layer of the first protruding pattern has a trapezoidal cross-sectional shape.

Images