Semiconductor Device

Abstract

To provide a semiconductor device in which a circuit and a battery are enclosed efficiently.SOLUTION: A semiconductor device comprises a first transistor, a second transistor and a secondary battery which are provided on one substrate. The second transistor has a channel region having an oxide semiconductor. The secondary battery has a solid electrolyte, which can be manufactured by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has the function of being charged by radio waves.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to an article, a method, or a manufacturing method. The present invention also relates to a composition of matter. One embodiment is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or In particular, one embodiment of the present invention relates to a semiconductor device including an oxide semiconductor. The present invention relates to a display device or a light-emitting device.

[0002] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. The display device, the electro-optical device, the semiconductor circuit, and the electronic device all have a semiconductor device. There are cases. [Background technology]

[0003] In recent years, electronic devices that are carried by users or worn by users have been actively developed. .

[0004] Electronic devices carried by users or worn by users are powered by batteries. In particular, electronic devices that use a central processing unit (CPU) If the CPU contains a power dissipating unit, it will consume more power when in operation. Therefore, CPU processing has a significant impact on power consumption.

[0005] It has a highly functional integrated circuit (CPU, etc.) on a plastic or plastic film substrate. Patent Document 1 describes a semiconductor device that wirelessly transmits and receives power or signals.

[0006] In addition, the register of the CPU is made of a memory circuit using oxide semiconductor transistors, and A semiconductor device that reduces power consumption is described in Patent Document 2.

[0007] In recent years, in order to miniaturize electronic devices, solid-state capacitors have been mounted on semiconductor substrates together with semiconductor elements. A technique for producing an all-solid-state battery using an electrolyte has been proposed (Patent Document 3). [Prior art documents] [Patent documents]

[0008] [Patent Document 1] JP 2006-32927 A [Patent Document 2] JP 2013-251884 A [Patent Document 3] JP 2003-133420 A Summary of the Invention [Problem to be solved by the invention]

[0009] This section explains the details of power consumption in electronic devices that include a CPU. Power consumption can be broadly divided into The power consumed by the CPU and the system around the CPU are The power consumed by multiple input / output devices and peripheral devices connected inside and outside the electronic device The power consumed by the system around the CPU is divided into Losses in the data bus, wiring patterns, and power consumption in the bus and controllers are also included. Included.

[0010] In addition, as electronic devices become smaller and thinner, the batteries are also subject to limitations. Terry says that as the volume gets smaller, the capacity gets smaller. The circuit, battery, etc. will be stored in this.

[0011] In addition, the battery generates heat when it is charged or discharged, which may have a thermal effect on the surrounding area. do.

[0012] As electronic devices become smaller and smaller, circuits, batteries, etc., are housed in smaller spaces, One of the challenges is how to control power consumption and heat generation.

[0013] One embodiment of the present invention is a novel semiconductor device, a semiconductor device in which a circuit or a battery is efficiently housed, The present invention proposes a semiconductor device with low power consumption or a semiconductor device with reduced heat generation.

[0014] Another embodiment of the present invention proposes an electronic device having a novel structure. We propose a new electronic device with a new structure that can be worn on the body. We propose wearable electronic devices that can be used as a personal computer or embedded in the body. .

[0015] In addition, the description of a plurality of problems does not preclude the existence of each problem. The embodiment does not necessarily solve all of these problems. Also, problems other than those listed may be solved by the specification. These issues will become clear from the description, drawings, claims, etc. This may be an aspect of the invention. [Means for solving the problem]

[0016] One embodiment of the present invention is a semiconductor memory device including a first transistor, a second transistor, a secondary battery, and A semiconductor device having a first transistor, a second transistor, and a secondary battery. The first transistor is disposed on a substrate. The channel region of the first transistor includes silicon. The channel region of the transistor contains an oxide semiconductor. do.

[0017] In the above embodiment, the substrate is preferably flexible.

[0018] In the above aspect, the secondary battery preferably has a function of being charged wirelessly. It is.

[0019] In the above aspect, the secondary battery preferably contains lithium. Between the secondary battery and the first transistor, or between the secondary battery and the second transistor, An insulating film containing halogen may be provided.

[0020] In the above aspect, a cooling device may be provided on the secondary battery.

[0021] In the above embodiment, the secondary battery is preferably produced by a semiconductor manufacturing process. .

[0022] One embodiment of the present invention is an electronic device including the semiconductor device described in the above embodiment and a display device. do. Effect of the Invention

[0023] According to one embodiment of the present invention, a novel semiconductor device can be provided, and a circuit or a battery can be efficiently operated. To provide a semiconductor device that is housed in a housing, to provide a semiconductor device that consumes small power, Alternatively, it is possible to provide a semiconductor device in which heat generation is suppressed.

[0024] According to one embodiment of the present invention, it is possible to provide an electronic device with a novel structure. In particular, it is possible to provide an electronic device having a novel structure that can be shaped into various external shapes. More specifically, wearable electronic devices that are worn on the body and It is possible to provide electronic devices for embedded use.

[0025] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have all of these effects. Effects other than these may be included in the description, This is self-evident from the description in the drawings, claims, etc. It is possible to extract other effects from any of the descriptions. [Brief description of the drawings]

[0026] [Figure 1] FIG. 1 is a block diagram illustrating one embodiment of the present invention. [Diagram 2] 1 is a cross-sectional view of a semiconductor device illustrating one embodiment of the present invention. [Diagram 3] 1 is a cross-sectional view of a semiconductor device illustrating one embodiment of the present invention. [Figure 4] 1 is a cross-sectional view of a semiconductor device illustrating one embodiment of the present invention. [Diagram 5] 1A and 1B are a top view and a cross-sectional view of a battery illustrating one embodiment of the present invention. [Figure 6] 1A and 1B are a top view and a cross-sectional view of a battery illustrating one embodiment of the present invention. [Figure 7] 1A and 1B are a top view and a cross-sectional view of a battery illustrating one embodiment of the present invention. [Figure 8] FIG. 1 is a cross-sectional view of a battery illustrating one embodiment of the present invention. [Figure 9] 1A and 1B are a top view and a cross-sectional view of a transistor included in one embodiment of the present invention. [Figure 10] 1A and 1B are a cross-sectional view and an energy band diagram of a transistor according to one embodiment of the present invention. [Figure 11] 1A and 1B are a top view and a cross-sectional view of a transistor included in one embodiment of the present invention. [Figure 12] 1A to 1C are diagrams illustrating electronic devices according to one embodiment of the present invention. [Figure 13]1A to 1C are diagrams illustrating electronic devices according to one embodiment of the present invention. [Figure 14] 1A to 1C are diagrams illustrating electronic devices according to one embodiment of the present invention. [Figure 15] 1A to 1C are diagrams illustrating electronic devices according to one embodiment of the present invention. [Figure 16] 1 is a cross-sectional view of a semiconductor device illustrating one embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] Hereinafter, an embodiment will be described with reference to the drawings. However, the embodiment may be different from the embodiment. The present invention can be implemented in any manner without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that various modifications may be made to the embodiments and details of the present invention. The present invention should not be construed as being limited to the description of the following embodiments. In the embodiments and examples, the same parts or parts having similar functions are denoted by the same reference numerals. These are commonly used in different drawings, and repeated explanations will be omitted.

[0028] In addition, in the drawings, the size, layer thickness, or area may be exaggerated for clarity. Therefore, the scale is not necessarily limited to that shown in the drawings. The figures are merely schematic representations and are not limited to the shapes or values ​​shown in the drawings.

[0029] In addition, the ordinal numbers "first," "second," and "third" used in this specification are intended to indicate a mixture of elements. It should be noted that the numbers are added to avoid confusion and are not intended to be limiting.

[0030] In addition, in this specification, the terms "above" and "below" that indicate the position of components are used. The relationship is used for convenience in describing the drawings. The dimensions change depending on the direction in which each component is depicted. It is not limited to words and phrases, and can be rephrased appropriately depending on the situation.

[0031] In this specification, a transistor includes a gate, a drain, and a source. It is an element that has at least three terminals. And the drain (drain terminal, drain region or drain electrode layer) and source (source terminal, source region or source electrode layer) A channel region is provided between the drain and the source, and a current flows through the drain, the channel region, and the source. In this specification and the like, the channel region refers to a region through which a current mainly flows. This refers to the area in which the fluid flows.

[0032] In addition, the source and drain functions may differ depending on whether transistors with different polarities are used or the circuit operation. In some cases, such as when the direction of the current changes during operation, the positions may be reversed. In the text, the terms source and drain may be used interchangeably. .

[0033] In addition, in this specification, "electrically connected" means "something that has some electrical effect" " includes cases where the device is connected via "anything that has some electrical effect." " is not subject to any particular restriction as long as it enables the transmission and reception of electrical signals between the connection objects. For example, "things that have some kind of electrical function" include electrodes, wiring, and transistors. These include switching elements, resistor elements, inductors, capacitors, and other various functions. This includes elements such as

[0034] (Embodiment 1) <Device block diagram> FIG. 1 shows a block diagram of a device 10 according to one embodiment of the present invention.

[0035] The device 10 according to the present embodiment includes a control module 15, a display module 21, and The control module 15 controls the entire device 10 and communicates with the The controller 14 controls the signal transmission and the display of information on the display unit 16.

[0036] The control module 15 includes a CPU 11, a battery 12, a regulator 13, and a wireless receiver. It has a signal section 14.

[0037] The display module 21 includes a display unit 16, a display drive circuit 19, a battery 17, a regulator The radio communication device includes a radio transmitter 18 and a radio receiver 20.

[0038] The communication module 26 includes a communication circuit 22, a battery 23, a regulator 24, and and a wireless receiving unit 25.

[0039] A regulator is a type of electronic circuit that keeps the output voltage or current constant. The regulator is a circuit that controls the power supply in a linear manner depending on the level of the power load. They are classified into two types: regulators and switching regulators. The regulator is also called a DC-DC converter.

[0040] Each module has its own regulator and battery. It is a secondary battery that can be charged and discharged, and is connected to a circuit that allows wireless charging. Each battery is electrically connected to the radio receiver through its own regulator. Each regulator is connected to each functional circuit from the connected battery. Each regulator also supplies the necessary power or signal. It has a function to prevent overcharging while charging.

[0041] The device 10 allows each module to be turned on or off independently. The operation system allows selective operation of only the modules to be used. This makes it possible to reduce power consumption of the device 10.

[0042] For example, when a user wants to view information on the display unit 16 without using the communication function, the communication module In the control circuit 26, the power to the communication circuit 22 is cut off and the battery 23 is not used. The display module 21 and the control module 15 are put into the ON state.

[0043] Furthermore, if it is a still image, the display module 21 and the control module 15 are turned on. After displaying a still image on the display unit 16, the control module 15 is turned off while still displaying the still image. Even if the display module 21 is in the ON state, the still image can be continuously displayed by turning on only the display module 21. In this case, the control module 15 is not operating even though a still image is being displayed. When viewed from the outside, the power consumption of the control module 15 can be regarded as zero. In the above, an oxide semiconductor having a low off-state current (e.g., an oxide material containing In, Ga, and Zn) is used. If a transistor (such as a photodiode) is used or if each pixel has a memory, a still image can be captured. Even if the power supply from the battery 17 is cut off after displaying the still image, the still image can be displayed for a certain period of time. You can continue to show it.

[0044] In this way, a battery is provided for each part used in electronic devices, and only the parts that are used are selected. By efficiently driving the device, power consumption can be reduced.

[0045] Note that the register of the CPU 11 may be formed using memory cells including oxide semiconductor transistors. By using an oxide semiconductor transistor for the CPU 11, 11 is stopped, and data can be retained even if the supply of power voltage is stopped. This makes it possible to reduce power consumption. even when the computer user has stopped entering information into a keyboard or other input device. Therefore, the operation of the CPU 11 can be stopped, thereby reducing power consumption. .

[0046] In addition, the transistors used in the regulators 13, 18, and 24 are oxide semiconductor transistors. The use of a transistor reduces power consumption because of its small off-current. A regulator (DC-DC converter) whose control circuit is made up of semiconductor transistors is It can operate at high temperatures of over 50°C. Therefore, such a DC-DC converter: This is suitable for electronic devices that are likely to become hot during operation.

[0047] In this embodiment, the display module 21, the control module 15, and the communication module 26 Although the above example shows that each of the batteries is used, the present invention is not limited to these three batteries. Further, the electronic device has four or more batteries including the functional module and its battery. It may also be a device.

[0048] For example, if the exterior body of the device 10 is made of a flexible material, it can be used as a wristwatch that is worn on the body. A wearable device can be realized. In that case, a small battery is placed inside the device 10. The distributed arrangement makes the device feel heavier than one large battery. In addition, even if each small battery generates heat, it is comfortable for the user. Does not hinder.

[0049] Next, a semiconductor device that can be used for the device 10 will be described with reference to FIGS. Make a statement.

[0050] <Configuration Example 1 of Semiconductor Device> FIG. 2 shows a transistor 720, a transistor 730, and a buffer 740 fabricated on the same substrate. 7 shows a cross-sectional view of a semiconductor device 1000 including a transistor 720 and a transistor 740. is disposed on a substrate 700, a transistor 730 is disposed on a transistor 720, The battery 740 is disposed above the transistor 730 .

[0051] The semiconductor device 1000 includes a substrate 700, a transistor 720, an element isolation layer 727, and an insulating layer. The insulating film 731, the transistor 730, the insulating film 732, the insulating film 741, and the battery 7 40, an insulating film 742, plugs 701, 703, 704, 706, and wirings 702, 70 5 and a wiring 707. The transistor 720 has a gate electrode 726 and a gate insulator The film 724, the sidewall insulating layer 725, and the impurity region that functions as a source region or a drain region are Region 721, LDD (Lightly Doped Drain) region and extension The semiconductor device has an impurity region 722 functioning as a gate region, and a channel region 723 .

[0052] The impurity concentration of the impurity region 721 is higher than that of the impurity region 722. and the sidewall insulating layer 725 as a mask, the impurity regions 721 and 722 are formed by self-etching. It can be formed in a self-consistent manner.

[0053] The substrate 700 may be a single crystal semiconductor substrate made of silicon or silicon carbide, or a polycrystalline semiconductor Substrates, compound semiconductor substrates made of silicon germanium, and SOI (Silicon on Insulator) A semiconductor substrate may be used. The transistor can easily operate at high speed. When an n-type substrate is used, an impurity element that imparts n-type is added to a part of the substrate 700 to form an n-type It is also possible to form a well and form a p-type transistor in the area where the n-type well is formed. As impurity elements for imparting n-type conductivity, phosphorus (P), arsenic (As), etc. can be used. As an impurity element for imparting p-type conductivity, boron (B) or the like can be used. .

[0054] The substrate 700 may be an insulating substrate having a semiconductor film formed thereon. For example, glass substrates, quartz substrates, plastic substrates, metal substrates, stainless steel substrates, Substrate with stainless steel foil, tungsten substrate, tungsten foil A substrate having a fibrous material, a flexible substrate, a laminated film, a paper containing a fibrous material, or a base film Examples of glass substrates include barium borosilicate glass, alumina glass, etc. Examples of the flexible substrate include borosilicate glass and soda lime glass. Polyethylene terephthalate (PET), Polyethylene naphthalate (PEN), Polyethylene Flexible plastics such as teresulfone (PES) or acrylic Synthetic resins are used. Examples of laminated films include polypropylene, polyester, etc. Examples of the base film include polyvinyl chloride, polyvinyl fluoride, and polyvinyl chloride. Polyester, polyamide, polyimide, aramid, epoxy, inorganic vapor deposition film, or Paper and other items.

[0055] Note that a semiconductor element is formed using a certain substrate, and then the semiconductor element is transferred to another substrate. Examples of the substrate onto which the semiconductor element is transferred include the above-mentioned substrates, as well as paper substrates, Polyimide film substrate, stone substrate, wood substrate, Fabric substrates (natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester, etc.) , leather substrate, or rubber substrate. By using these substrates, Formation of transistors, formation of transistors with low power consumption, manufacturing of durable devices, heat resistance It is possible to provide the device with improved durability, weight reduction, or thinness.

[0056] The transistor 720 is isolated from other transistors formed on the substrate 700 by an element isolation layer 727. It is separated from the data.

[0057] The transistor 720 may be a transistor having silicide (salicide) or a transistor having sidewall insulation. A transistor without a layer may be used. By doing so, the resistance of the source region and the drain region can be reduced, and the speed of the semiconductor device can be increased. In addition, since the semiconductor device can operate at a low voltage, the power consumption of the semiconductor device can be reduced. do.

[0058] A first semiconductor material is used for transistor 720 and a second semiconductor material is used for transistor 730. When using the above, the first semiconductor material and the second semiconductor material have different forbidden band widths. For example, the first semiconductor material is preferably a semiconductor material other than an oxide semiconductor (silicon (including strained silicon), germanium, silicon germanium, silicon carbide, gallium arsenide (e.g., silicon, aluminum gallium arsenide, indium phosphide, gallium nitride, organic semiconductors, etc.) The second semiconductor material may be an oxide semiconductor. Transistors using single crystal silicon or the like can easily operate at high speed. A transistor using a conductor has a low off-state current.

[0059] Note that the oxide semiconductor transistor will be described in detail in Embodiment 3 to be described later. .

[0060] Here, when a silicon-based semiconductor material is used for the transistor 720 provided in the lower layer, The hydrogen in the insulating film provided near the semiconductor film of the transistor 720 is dangling from silicon. This has the effect of terminating the double bonds and improving the reliability of the transistor 720. When an oxide semiconductor is used for the transistor 730, the semiconductor Hydrogen in the insulating film provided near the semiconductor film is a factor that generates carriers in the oxide semiconductor. This may cause a decrease in reliability of the transistor 730. Therefore, an oxide semiconductor is used in the upper layer of the transistor 720 using a silicon-based semiconductor material. When the transistor 730 is stacked, the function of preventing hydrogen diffusion between them is provided. It is particularly effective to provide the insulating film 731 having the insulating film 731. In addition to improving the reliability of transistor 720 by confining The suppression of hydrogen diffusion also improves the reliability of the transistor 730. It is possible.

[0061] The insulating film 731 may be, for example, aluminum oxide, aluminum oxynitride, or gallium oxide. , gallium oxide, yttrium oxide, yttrium oxide nitride, hafnium oxide, Hafnium nitride, yttria stabilized zirconia (YSZ), etc. can be used.

[0062] In addition, a transistor 730 including an oxide semiconductor film is formed so as to cover the transistor 730. It is preferable to form an insulating film 732 having a function of preventing diffusion of hydrogen on the substrate 730. The insulating film 732 can be formed using a material similar to that of the insulating film 731, particularly aluminum oxide. It is preferable to use aluminum oxide. The aluminum oxide film is formed by removing impurities such as hydrogen and moisture. The membrane has a high blocking effect, preventing both water and oxygen from passing through. By using an aluminum oxide film as the insulating film 732 covering the transistor 730, In addition, oxygen is prevented from being released from the oxide semiconductor film included in the transistor 730. This makes it possible to prevent water and hydrogen from being mixed into the semiconductor film.

[0063] The plugs 701, 703, 704, and 706 and the wirings 702, 705, and 707 are made of copper (Cu). , tungsten (W), molybdenum (Mo), gold (Au), aluminum (Al), manganese Gunn (Mn), Titanium (Ti), Tantalum (Ta), Nickel (Ni), Chromium (Cr) , Lead (Pb), Tin (Sn), Iron (Fe), Cobalt (Co) Alternatively, a single layer or a multilayer of a conductive film containing an alloy or a compound having these as a main component is used. In particular, when a Cu-Mn alloy is used for the plug and wiring, the oxygen-containing The function of forming manganese oxide at the interface with the insulator, which suppresses the diffusion of Cu. It is preferable because

[0064] The battery 740 is a secondary battery that can be repeatedly charged and discharged, and is a solid electrolyte battery. The battery 740 is a solid-state battery that includes a regulating valve to enable wireless charging. The amplifier is electrically connected to the wireless receiving unit via a modulator.

[0065] The battery 740 can be manufactured using a semiconductor manufacturing process. The semiconductor manufacturing process includes the film formation process, crystallization process, plating process, cleaning process, and lithography. process, etching process, polishing process, impurity injection process, heat treatment process, etc. This refers to the general techniques used in manufacturing.

[0066] The battery 740 will be described in detail in the second embodiment described later.

[0067] The insulating film 741 is made of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, Aluminum oxide, aluminum nitride, aluminum oxide nitride, hafnium oxide, dioxide ZrO2, Yttrium oxide, Gallium oxide, Lanthanum oxide, Cesium oxide, Titanium oxide One or more of the following may be selected and used in the form of a single layer or a multilayer:

[0068] When the battery 740 contains lithium, the insulating film 741 prevents the diffusion of lithium (blocking It is preferable that the lithium contained in the battery 740 has a function of providing a movable inductor. When the transistor 720 or 730 is turned on, This causes the semiconductor element to deteriorate. The insulating film 741 blocks lithium ions, A highly reliable semiconductor device can be provided.

[0069] If the battery 740 contains lithium, the insulating film 741 may be made of fluorine, chlorine, bromine, or iodine. It is preferable that the insulating film 741 contains a halogen such as an alkali. The lithium is easily bonded to the metal lithium, and the lithium is fixed in the insulating film 741. This can prevent the ruthenium from diffusing out of the insulating film 741.

[0070] For example, silicon nitride is deposited by CVD (Chemical Vapor Deposition) as the insulating film 741. When a film is formed by the deposition method, the volume ratio of the source gas is 3% to 6%, e.g. By mixing gas containing about 5% halogen, the halogen in the resulting silicon nitride film is The halogen elements contained in the insulating film 741 are detected by secondary ion mass spectrometry (S IMS (Secondary Ion Mass Spectrometry) The concentration that can be obtained is 1×10 17 atoms / cm 3 More than 1×10 18 atom s / cm 3 More preferably, 1×10 19 atoms / cm 3 That is all.

[0071] The insulating film 742 has a function of protecting the battery 740. For example, resins (polyimide resins, polyamide resins, acrylic resins, siloxane resins, epoxy resins) Resins, phenolic resins, etc.), glass, amorphous compounds, ceramics and other insulating materials In addition, calcium fluoride or the like can be used as a water absorbing layer between the resin layers. The insulating film 742 can be formed by a method such as spin coating or an ink-jet method. The insulating film 742 can be formed of silicon oxide, silicon oxynitride, or nitride. Silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, aluminum oxynitride ttrium oxide, hafnium oxide, zirconium oxide, yttrium oxide, gallium oxide, lanthanum oxide Select one or more of tantalum oxide, cesium oxide, tantalum oxide, or magnesium oxide, and Alternatively, it may be produced by laminating.

[0072] The semiconductor device 1000 may further include a semiconductor element formed on the battery 740. In this case, similarly to the insulating film 741, the insulating film 742 is provided with a function to prevent (block) the diffusion of lithium. The insulating film 742 preferably has a function of blocking lithium, thereby improving reliability. It is possible to provide a semiconductor device with high performance.

[0073] When a semiconductor element is fabricated on the battery 740, the insulating film 742 is formed in the same manner as the insulating film 741. Similarly, it is preferable that the insulating film 742 contains a halogen such as fluorine, chlorine, bromine, or iodine. The halogen content of lithium makes it easy to bond with the alkali metal lithium, which acts as an insulating material. Diffusion out of the membrane 742 can be prevented.

[0074] In addition, in FIG. 2 to FIG. 4, the areas without symbols and hatching patterns are The region is made up of aluminum oxide, aluminum oxide nitride, and other materials. Aluminum, magnesium oxide, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride silicon, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, oxide Contains one or more selected from lanthanum, neodymium oxide, hafnium oxide, tantalum oxide, etc. Insulators can be used. In addition, polyimide resin, polyamide resin, aluminum, etc. can be used in the region. Use of organic resins such as acrylic resin, siloxane resin, epoxy resin, and phenolic resin. It is also possible.

[0075] The semiconductor device 1000 in FIG. 2 has a heat sink, a water-cooling cooler, and It is preferable to provide a cooling device such as a cooling fan. This makes it possible to prevent malfunction of the semiconductor device 1000 due to heat generation from the lead 740.

[0076] The semiconductor device 1000 of FIG. 2 has an air gap between the battery 740 and the transistor 730. A gap (a gap between the vacuum layers) may be provided. The cross-sectional view of this case is shown in Figure 16. The semiconductor device 1300 has an air gap between the battery 740 and the transistor 730. The air gap 762 is formed by a trench-containing insulating film 761. The insulating films 761 and 76 3 includes aluminum oxide, aluminum oxide nitride, silicon oxide, silicon oxide nitride, An insulator containing one or more selected from silicon oxynitride, silicon nitride, and the like may be used. By providing an air gap 762 under the battery 740, heat generated from the battery 740 is This can prevent the heat from being transmitted to the transistor 720 and the transistor 730. It is possible to prevent malfunction of the transistors 720 and 730 due to heat.

[0077] FIG. 2 shows a configuration in which a battery 740 is provided on top of the transistors 720 and 730. However, a battery 740 may be provided between the transistors 720 and 730. In this case, the elements are arranged in the order of transistor 720, battery 740, and transistor 730. In particular, when the battery 740 is fabricated, the transistor 73 If high-temperature heat treatment is required to destroy the battery 740, It is preferable to form a transistor 730.

[0078] For example, transistor 720 and transistor 730 may be used to form the transistor 720 in device 10 of FIG. The CPU 11 or regulators 13, 18, 24 and other circuits are fabricated, and these circuits The battery 740 that supplies power to the device is fabricated on the same board as these circuits. This makes it possible to make the chair 10 smaller or thinner.

[0079] <Configuration Example 2 of Semiconductor Device> In FIG. 2, the transistor 720 is a planar transistor. The shape of the star 720 is not limited to this. For example, a FIN type, a TRI-GAT type, The transistors can be of the E (tri-gate) type. An example is shown in Figure 3.

[0080] The semiconductor device 1100 shown in FIG. 3 includes a FIN type transistor 75 provided on a substrate 700. 3, the semiconductor device 1000 shown in FIG. 2 has a transistor 1001 shown in FIG. The transistor 750 is a cross-sectional view of the transistor in the channel length direction. A transistor 750 is shown in cross section in the channel width direction of the transistor.

[0081] In FIG. 3, an insulating film 757 is provided on a substrate 700. The substrate 700 has a thin The semiconductor device has a protruding portion (also called a fin) that is thin and has a thickness of 100 nm. An insulating film may be provided on the protruding portion. The insulating film prevents the substrate 700 from being etched when the protrusions are formed. The protrusions function as a mask for the purpose of preventing the formation of the ions. For example, the protrusion may be a substantially rectangular parallelepiped protrusion, or a protrusion with a thick tip. A gate insulating film 754 is provided on the portion, and a gate electrode 756 and a sidewall insulating film are provided thereon. The substrate 700 is provided with an edge layer 755. and an impurity region 751 that functions as an LDD region or an extension region. In this embodiment, the substrate 700 has a protruding portion 752 and a channel region 753. However, the semiconductor device according to one embodiment of the present invention is not limited to this. For example, a semiconductor region having a protrusion may be formed by processing an SOI substrate.

[0082] For other components of the semiconductor device 1100, please refer to the description of the semiconductor device 1000. do.

[0083] <Configuration Example 3 of Semiconductor Device> In the semiconductor device 1200 shown in FIG. 4, the battery 740 is provided under the transistor 730. 2 in that the semiconductor device 1000 is provided with a first insulating layer 1020.

[0084] The semiconductor device 1200 is connected to the transistor 720 by being configured as shown in FIG. The plug and wiring for connecting the battery 740 and the plug and wiring for connecting the battery 740 are simultaneously manufactured. This allows the process to be simplified. If high temperature treatment is required to the extent that the lug 701 or the wiring 702 is destroyed, the battery 74 0, it is necessary to form the plug 701 and the wiring 702. In this case, As shown in FIG. 1, it is preferable to provide the transistor 720 and the battery 740 on the same layer.

[0085] In FIG. 4, the battery 740 is formed after the transistor 720 is formed. However, the battery 740 may be formed first, and then the transistor 720 may be formed. In forming the battery 740, a high temperature treatment is required that may destroy the transistor 720. If necessary, it is better to form the battery 740 first and then the transistor 720. preferable.

[0086] For other components of the semiconductor device 1200, please refer to the description of the semiconductor device 1000. do.

[0087] The configuration and method described in this embodiment may be appropriately combined with the configuration and method described in other embodiment. It can be used in combination.

[0088] (Embodiment 2) In this embodiment mode, details and a configuration example of the battery shown in Embodiment Mode 1 will be described with reference to the drawings. This will be explained in detail below.

[0089] <Battery configuration example 1> FIG. 5A is a top view of the battery 100. A cross-sectional view of the above structure is shown in FIG. 5(B). Note that in FIG. 5(A), some elements are omitted for clarity. In the drawings, elements are enlarged, reduced, or omitted.

[0090] The battery 100 shown in FIG. 5(A) includes an insulating film 101 and a positive electrode formed on the insulating film 101. a positive electrode current collector layer 102, a positive electrode active material layer 103 formed on the positive electrode current collector layer 102, and a positive electrode active material layer 104 formed on the positive electrode current collector layer 102. A solid electrolyte layer 104 formed on the material layer 103 and a The negative electrode active material layer 105 and the negative electrode current collector layer 106 formed on the negative electrode active material layer 105 are provided. The positive electrode collector layer 102 and the positive electrode active material layer 103 function as a positive electrode, and the negative electrode collector layer 10 The negative electrode active material layer 105 functions as a negative electrode. An insulating film 107 is formed, and wiring 108 is formed in the opening of the insulating film 107. is electrically connected to the positive electrode current collector layer 102 or the negative electrode current collector layer 106.

[0091] Although not shown, the interface between the solid electrolyte layer 104 and the positive electrode active material layer 103 or the solid A lithium layer may be formed at the interface between the electrolyte layer 104 and the negative electrode active material layer 105. The lithium layer is a layer for transferring lithium, which acts as a carrier, to the positive electrode active material layer in the battery 100. This layer is for supplying the lithium ion to the negative electrode active material layer (also called pre-doping). The lithium layer may be formed on the entire surface of the substrate. Alternatively, a nickel layer may be formed. The shape of the copper layer or nickel layer is approximately the same as that of the lithium layer. The copper layer or nickel layer is a layer that is connected from the lithium layer to the positive electrode active material layer or the negative electrode active material layer. When the active material layer is pre-doped with lithium, it can function as a current collector.

[0092] By the above pre-doping, all the lithium in the lithium layer is converted into the positive electrode active material layer or the negative electrode active material layer. The material layer may be doped, or the lithium layer may remain. The lithium layer remains after the charge, which prevents irreversible capacity loss due to subsequent charging and discharging of the battery. It can be used to replenish lost lithium in small amounts.

[0093] For details of the insulating film 101, see the description of the insulating film 741 in the first embodiment. stomach.

[0094] A positive electrode current collector layer 102, a positive electrode active material layer 103, a negative electrode active material layer 105, and a negative electrode current collector layer 10 6 can be formed by a sputtering method, a CVD method, a nanoimprint method, a vapor deposition method, or the like. When using the sputtering method, it is possible to form the film using a DC power source instead of an RF power source. The sputtering method using a DC power source has a high film formation rate, and therefore The positive electrode current collector layer 102, the positive electrode active material layer 103, and the negative electrode active material layer 104 are preferably arranged in a direction perpendicular to the surface of the positive electrode. If the thickness of the negative electrode current collector layer 105 and the negative electrode current collector layer 106 is, for example, 100 nm or more and 100 μm or less, good.

[0095] The positive electrode current collector layer 102 is made of titanium (Ti), aluminum (Al), gold (Au) and platinum. One or more of the above metals may be selected and used in a single layer or a multilayer. Alternatively, a conductive film containing a compound having these as a main component may be used in a single layer or a multilayer structure.

[0096] The positive electrode active material layer 103 is made of lithium cobalt oxide, lithium iron phosphate, lithium manganese oxide, One or more of lithium nickel oxide and vanadium oxide are selected and used in a single layer or a laminated layer. That's good.

[0097] In addition, the positive electrode active material layer 103 can be made of a lithium-containing composite phosphate having an olivine structure. Lithium-containing complex phosphate (general formula LiMPO4 (M is Fe(II), Mn(I) I), Co(II), Ni(II), etc. Examples of one or more of these include LiFePO4, L iNiPO4, LiCoPO4, LiMnPO4, LiFe a Ni b PO4, LiFe a Co b PO4, LiFe a Mn b PO4, LiNi a Co b PO4, LiNi a Mn b P O4 (a + b is 1 or less, 0 < a < 1, 0 < b < 1), LiFe c Ni d Co e PO4, L iFe c Ni d Mn e PO4, LiNi c Co d Mn e PO4 (c + d + e is 1 or less, 0 < c < 1, 0 < d < 1, 0 < e < 1), LiFe f Ni g Co h Mn i PO4 (f + g + h + i is 1 or less, 0 < f < 1, 0 < g < 1, 0 < h < 1, 0 < i < 1), etc.

[0098] The solid electrolyte layer 104 uses an inorganic solid electrolyte that can be formed by sputtering, vapor deposition, or CVD. The inorganic solid electrolyte can be a sulfide-based solid electrolyte or an oxide-based solid electrolyte.

[0099] Examples of sulfide-based solid electrolytes include, for example, Li7P3S 11 , Li 3.25 P 0.95 S4 , Li 10 GeP2S 12 , Li 3.25 Ge 0.25 P 0.75 ​S4, Li2S-P2 S5, Li2S-GeS2, Li2S-SiS2-Li3PO4, Li2S-SiS2- Ga2S3, Li2S-SiS2-Li4SiO4, LiI-Li2S-P2S5, Li Lithium composite sulfide materials such as I-Li2S-B2S3, LiI-Li2S-SiS2, etc. Some examples include:

[0100] In addition, as an oxide-based solid electrolyte, Li 1.3 Al 0.3 Ti 1.7 (PO4)3, L i 1.07 Al 0.69 Ti 1.46 (PO4)3, Li4SiO4-Li3BO3, L i 2.9 PO 3.3 N 0.46 , Li 3.6 S 0.6 P 0.4 O4, Li 1.5 Al0 .5 Ge 1.6 (PO4)3, Li2O, Li2CO3, Li2MoO4, Li3PO4 , Li3VO4, Li4SiO4, LLT(La 2 / 3-x Li 3x TiO3), LLZ (Li7La3Zr2O 12 Lithium composite oxides and lithium oxide materials such as can be.

[0101] The solid electrolyte layer 104 is made of PEO (polyethylene oxide) formed by a coating method or the like. Furthermore, the above-mentioned inorganic solid electrolyte and polymer A composite solid electrolyte containing a solid electrolyte based on the above-mentioned system may also be used.

[0102] If necessary, a separator may be provided in the solid electrolyte layer 104 to prevent the positive and negative electrodes from short-circuiting. The separator may be preferably an insulating material having holes. For example, cellulose, glass fiber, ceramics, nylon (polyamide), vinyl Nilon (polyvinyl alcohol fiber), polyester, acrylic, polyolefin, For example, a material formed from synthetic fibers using polyurethane can be used.

[0103] The negative electrode active material layer 105 is made of carbon (C), silicon (Si), germanium (Ge), tin ( Sn), aluminum (Al), lithium (Li), lithium titanate, lithium niobate Select one or more of aluminum, niobium oxide, tantalum oxide, and silicon oxide and use them in a single layer or multilayer. That's good.

[0104] The negative electrode current collector layer 106 is made of titanium (Ti), copper (Cu), stainless steel, iron (Fe), gold (A), or u), platinum (Pt) and nickel (Ni) are selected and used in single or multilayer configurations. In addition, a conductive film containing an alloy of the above metals or a compound containing the alloy as a main component may be formed by: It may be used in a single layer or in a laminate.

[0105] The positive electrode active material layer 103 and the negative electrode active material layer 105 may be formed, if necessary, with a layer that enhances the adhesion of the active material. The adhesive may contain a binder for bonding the adhesive.

[0106] The binder preferably contains, for example, a water-soluble polymer. For example, polysaccharides can be used. As the polysaccharide, carboxymethyl cellulose can be used. CMC, methyl cellulose, ethyl cellulose, hydroxypropyl cellulose Also, cellulose derivatives such as diacetyl cellulose and regenerated cellulose, starch, etc. It can be used.

[0107] In addition, styrene-butadiene rubber (SBR) and styrene-isoprene are used as binders. Styrene rubber, acrylonitrile butadiene rubber, butadiene rubber, ethylene pro It is preferable to use rubber materials such as pyrene-diene copolymers. These rubber materials have the following characteristics: It is more preferable to use it in combination with the above-mentioned water-soluble polymer.

[0108] Alternatively, the binder may be polystyrene, polymethyl acrylate, or polymethyl methacrylate. Polymethylmethacrylate (PMMA), Sodium polyacrylate, Polyvinyl alcohol (PVA), Poly Ethylene oxide (PEO), polypropylene oxide, polyimide, polyvinyl chloride, Polytetrafluoroethylene, polyethylene, polypropylene, isobutylene, polyethylene Polyethylene terephthalate, nylon, polyvinylidene fluoride (PVdF), polyacrylonitrile It is preferable to use materials such as polyaniline (PAN).

[0109] The binder may be used in combination of two or more of the above.

[0110] In addition, the positive electrode active material layer 103 and the negative electrode active material layer 105 are formed of a material having a thickness of 100 nm to increase the electrical conductivity of the active material layer. The conductive additive may be included.

[0111] Examples of the conductive assistant include natural graphite, artificial graphite such as mesocarbon microbeads, and carbon fibers. Examples of carbon fibers that can be used include mesophase pitch carbon fibers. In addition, carbon fibers such as isotropic pitch-based carbon fibers can be used. Carbon nanofibers and carbon nanotubes can be used. The tube can be produced by, for example, a vapor phase growth method. For example, carbon black (acetylene black (AB) etc.) or carbon materials such as graphene In addition, for example, copper, nickel, aluminum, silver, gold, and other metals can be used. Metal powder, metal fiber, conductive ceramic material, etc. can be used.

[0112] Flaky graphene has excellent electrical properties, such as high electrical conductivity, as well as flexibility and functionality. Graphene has excellent physical properties, such as mechanical strength. Therefore, graphene is used as a conductive additive. This makes it possible to increase the number of contact points and the contact area between the active materials.

[0113] In this specification, graphene refers to a single-layer graphene or a graphene having 2 to 100 layers. Single-layer graphene is a graphene consisting of a single atomic layer of carbon molecules with π bonds. Graphene oxide refers to the compound in which the graphene is oxidized. In addition, when graphene is formed by reducing graphene oxide, Not all of the oxygen in the graphene is released, and some of the oxygen remains in the graphene. When oxygen is present, the percentage of oxygen is measured graphically using XPS (X-ray photoelectron spectroscopy). It is 2% or more and 20% or less of the total fen, preferably 3% or more and 15% or less.

[0114] For details of the insulating film 107, see the description of the insulating film 742 in the first embodiment. stomach.

[0115] For details about the wiring 108, the description of the wiring 707 in Embodiment 1 can be referred to.

[0116] In addition, the battery 100 may be configured such that the positive and negative electrodes shown in FIG. 5B are reversed. That is, from the bottom, the negative electrode current collector layer 106, the negative electrode active material layer 105, the solid electrolyte layer 104, , a positive electrode active material layer 103, and a positive electrode current collector layer 102 may be formed.

[0117] For example, when LiFePO4 with a thickness of 1 μm is used for the positive electrode active material layer 103, the battery The capacity of 100 is calculated to be approximately 60 μAh / cm 2 A capacity of 1000 Ω is obtained.

[0118] For example, when LiCoO2 having a thickness of 1 μm is used for the positive electrode active material layer 103, The capacity of 00 is calculated to be approximately 70μAh / cm 2 A capacity of 1000 Ω is obtained.

[0119] For example, when LiMn2O4 with a film thickness of 1 μm is used for the positive electrode active material layer 103, the battery The capacity of 100 is calculated to be approximately 60 μAh / cm 2 A capacity of 1000 Ω is obtained.

[0120] In addition, all the above calculations are performed assuming lithium in the negative electrode active material layer 105 and Theoretical capacity of LiFePO4 is 170mAh / g, LiCoO2 is 137mAh / g Calculations were performed using the same capacity as LiMn2O4 (148mAh / g).

[0121] The battery 100 is charged and discharged depending on the amount of power required by the semiconductor device or electronic device to which it is connected. The area and capacity of the battery 100 may be determined. For example, When ePO4 is used, the above calculation results show that the area of ​​the battery 100 (positive electrode active material The area of ​​the overlapping portion of the negative electrode active material layer 103 and the negative electrode active material layer 105 is 1 cm 2 More than 100cm 2 Below By placing it below the battery, the capacity of the battery 100 can be set to 60μAh or more and 6mAh or less. can be done.

[0122] In addition, depending on the amount of power required for the semiconductor device or electronic device connected to the battery, multiple The batteries 100 may be connected in series and / or parallel. By connecting several batteries 100 in series and / or parallel, the battery energy This is preferable because it can increase the density and reduce the area occupied.

[0123] <Battery configuration example 2> FIG. 6 shows an example of a battery included in one embodiment of the present invention. FIG. 6(A) shows a battery 6(B) is a top view of the 120, and FIG. 6(A) is a cross-sectional view taken along the dashed line XY. In FIG. 6(A), some elements may be enlarged, reduced, or distorted for clarity. The figure is omitted.

[0124] The battery 120 shown in FIG. 6B is a battery having an insulating film 101 and a The positive electrode current collector layer 102 and the negative electrode current collector layer 106 formed, and the positive electrode current collector layer 102 on the positive electrode current collector layer 102 The negative electrode active material layer 103, the negative electrode active material layer 105 on the negative electrode current collector layer 106, and at least the positive electrode active material layer 106 on the negative electrode current collector layer 106 are a solid electrolyte layer 104 in contact with the material layer 103 and the negative electrode active material layer 105; The current collector layer 102 and the positive electrode active material layer 103 function as a positive electrode, and the negative electrode current collector layer 106 and The negative electrode active material layer 105 functions as a negative electrode. 7 is formed, and wiring 108 is formed in the opening of the insulating film 107. The wiring 108 is It is electrically connected to the current collector layer 102 or the negative electrode current collector layer 106 .

[0125] The battery 120 has a positive electrode current collector layer 102 and a negative electrode current collector layer 106 formed on the same plane. 5 in that the positive and negative electrodes are located in the XY directions in FIG. 6B. By configuring the battery 120 as shown in FIG. 6B, a certain amount of charge between the positive and negative electrodes is generated. This allows for a certain distance to be provided, thereby preventing short-circuiting between the positive and negative electrodes.

[0126] For details regarding each component of battery 120, see the description of battery 100 in FIG. Please refer to the following.

[0127] The positive electrode collector layer 102 and the negative electrode collector layer 106 of the battery 120 are made of the same material at the same time. By forming the positive and negative electrode current collector layers simultaneously using the same material, the manufacturing process can be simplified.

[0128] <Battery configuration example 3> FIG. 7 shows an example of a battery included in one embodiment of the present invention. FIG. 7(A) shows a battery 7(B) is a top view of the semiconductor device 130, and FIG. 7(A) is a cross-sectional view taken along the dashed line XY. In FIG. 7(A), some elements may be enlarged, reduced, or distorted for clarity. The figure is omitted.

[0129] The battery 130 shown in FIG. 7B is a battery having an insulating film 101 and a The positive electrode current collector layer 102 and the negative electrode current collector layer 106 formed on the positive electrode current collector layer 102 The positive electrode active material layer 103 formed on the insulating film 101 and the negative electrode current collector layer 1 06, and a positive electrode active material layer 104 formed on the positive electrode active material layer 106 via the solid electrolyte layer 104. The negative electrode 103 is formed on the solid electrolyte layer 104 and the negative electrode current collector layer 106. The positive electrode current collector layer 102 and the positive electrode active material layer 103 function as a positive electrode. The negative electrode current collector layer 106 and the negative electrode active material layer 105 function as a negative electrode. An insulating film 107 is formed on the negative electrode active material layer 105, and a wiring 108 is formed in the opening of the insulating film 107. The wiring 108 is electrically connected to the positive electrode current collector layer 102 or the negative electrode current collector layer 106. Connected.

[0130] In the battery 130 shown in FIG. 7(B), the negative electrode active material layer 105 is disposed on the solid electrolyte layer 104. The battery 130 differs from the battery 120 shown in FIG. By configuring as shown in FIG. 7B, the positive electrode current collector layer 102 and the negative electrode current collector A certain distance can be provided between the electrode layer 106 and the electrode layer 106, which allows efficient ion transfer. Therefore, the distance between the positive electrode active material layer 103 and the negative electrode active material layer 105 can be reduced.

[0131] For details regarding each component of battery 130, see the description of battery 100 in FIG. Please refer to the following.

[0132] In addition, the battery 130 may have the positive and negative electrodes in a reversed positional relationship. The positional relationship between the current collector layer 102 and the negative electrode current collector layer 106, and the positional relationship between the positive electrode active material layer 103 and the negative electrode active material layer The positions of 105 may be interchanged.

[0133] In addition, the positive electrode collector layer 102 and the negative electrode collector layer 106 of the battery 130 are formed in the same process. The current collector layers of the positive and negative electrodes may be formed in the same process, thereby simplifying the manufacturing process. It is possible.

[0134] <Battery configuration example 4> FIG. 8 illustrates an example of a battery included in one embodiment of the present invention. FIG. 8(A) illustrates a battery FIG. 140 is a cross-sectional view of FIG.

[0135] The battery 140 shown in FIG. 8(A) includes an insulating film 101 and a positive electrode formed on the insulating film 101. a positive electrode current collector layer 102, a positive electrode active material layer 103 formed on the positive electrode current collector layer 102, and a positive electrode active material layer 104 formed on the positive electrode current collector layer 102. A solid electrolyte layer 104 formed on the material layer 103 and a The insulating film 110 and the negative electrode active material layer 1 formed on the solid electrolyte layer 104 and the insulating film 110 05 and a negative electrode current collector layer 106 formed on the negative electrode active material layer 105, The layer 102 and the positive electrode active material layer 103 function as a positive electrode, and the negative electrode current collector layer 106 and the negative electrode active material The negative electrode current collector layer 106 is covered with an insulating film 107. Although not shown, the positive electrode current collector layer 102 and the negative electrode current collector layer 10 6 is electrically connected to an external device via wiring.

[0136] The battery 140 shown in FIG. 8(A) has a structure in which a solid electrolyte layer 104 and a negative electrode active material layer 105 are sandwiched between the solid electrolyte layer 104 and the negative electrode active material layer 105. The insulating film 110 has a function of preventing a short circuit between the positive electrode and the negative electrode. Possesses the ability.

[0137] The insulating film 110 can be made of, for example, an organic resin or an inorganic insulating material. Examples of the resin include polyimide resin, polyamide resin, acrylic resin, siloxane resin, and elastomeric resin. The inorganic insulating material may be an oxide resin, a phenol resin, or the like. Silicon, silicon oxynitride, etc. can be used. This makes it easier to form the insulating film 110. Therefore, it is particularly preferable to use a photosensitive resin. For example, photolithography, sputtering, vapor deposition, and droplet ejection (inkjet) methods are used. For example, a printing method (screen printing, offset printing, etc.) or the like may be used.

[0138] For details regarding the other components of battery 140, see the description of battery 100 in FIG. Just refer to it.

[0139] As shown in FIG. 8B, the battery 140 has an insulating film on the positive electrode active material layer 103. 110 may be formed.

[0140] In addition, in the battery 140 shown in FIGS. 8(A) and (B), the positive and negative electrodes are reversed. That is, from the bottom, the negative electrode current collector layer 106, the negative electrode active material layer 105, the solid electrolyte layer 106, and the negative electrode active material layer 107 may be stacked. A positive electrode active material layer 104, a positive electrode active material layer 103, and a positive electrode current collector layer 102 may be formed.

[0141] The configuration and method described in this embodiment may be appropriately combined with the configuration and method described in other embodiment. It can be used in combination.

[0142] (Embodiment 3) In this embodiment, the oxide semiconductor transistor described in Embodiment 1 will be described with reference to drawings. Note that the oxide semiconductor transistor described in this embodiment is just an example and can be used in the present invention. The shape of the transistor that can be used is not limited to this.

[0143] <Configuration example of oxide semiconductor transistor> 9A to 9D are a top view and a cross-sectional view of the transistor 600. 9(A) is a top view, and the cross section along the dashed line Y1-Y2 shown in FIG. 9(A) corresponds to FIG. 9(B). In this case, the cross section along the dashed line X1-X2 shown in FIG. 9(A) corresponds to FIG. 9(C), and 9(A) to 9(C) correspond to FIG. 9(D). In FIG. 9(D), some elements are enlarged, reduced, or omitted for clarity. The dashed line Y1-Y2 direction is the channel length direction, and the dashed line X1-X2 direction is the channel This is sometimes referred to as the width direction of the panel.

[0144] Note that the channel length is, for example, the length of a semiconductor (or transistor) in a top view of a transistor. The area where the gate electrode overlaps with the semiconductor (the part of the semiconductor through which current flows when the transistor is in the on-state). or a source (source region or source electrode) in the region where the channel is formed This refers to the distance between the drain (drain region or drain electrode) and the transistor. In a transistor, the channel length does not necessarily have the same value in all regions. The channel length of a transistor may not be determined to a single value. The channel length is a value, a maximum value, or a minimum value in the region where the channel is formed. Or the average value.

[0145] The channel width is the width of the semiconductor (or transistor) when it is in the on state. In the region where the gate electrode overlaps with the current flowing part, or in the region where the channel is formed, This refers to the length of the part where the source and drain face each other. In a transistor, the channel width does not necessarily have the same value in all regions. The channel width of a transistor may not be determined to a single value. The channel width is a value, a maximum value, or a minimum value in the region where the channel is formed. Or the average value.

[0146] Depending on the structure of the transistor, the channel in the region where the channel is actually formed may vary. The effective channel width (hereinafter referred to as the effective channel width) shown in the top view of the transistor The channel width (hereinafter referred to as the apparent channel width) may be different. For example, In a transistor having a three-dimensional structure, the effective channel width is The effect of the channel width becomes larger than the apparent channel width shown in For example, in a transistor with a fine, three-dimensional structure, The percentage of the channel region that is formed on the side of the semiconductor, compared to the percentage of the channel region that is formed In that case, the apparent channel width shown in the top view may be larger. In this case, the effective channel width where the channel is actually formed is larger than the width of the channel formed by the MOSFET.

[0147] By the way, in a transistor having a three-dimensional structure, the effective channel width is For example, it may be difficult to estimate the effective channel width from the design value. In order to obtain this, it is necessary to assume that the shape of the semiconductor is known. Unless k is precisely known, it is difficult to accurately measure the effective channel width.

[0148] Therefore, in this specification, in a top view of a transistor, a semiconductor and a gate electrode are overlapped. The apparent channel length is the length of the area where the source and drain face each other. The width of the channel is called the surrounded channel width (SCW). In this specification, when simply referred to as channel width, may refer to enclosed channel width or apparent channel width. In this document, when the term "channel width" is used, it may refer to the effective channel width. Channel length, channel width, effective channel width, apparent channel width, enclosure channel The channel width, etc., can be determined by acquiring cross-sectional TEM images and analyzing those images. A value can be determined.

[0149] In addition, the field effect mobility of the transistor and the current value per channel width are calculated. In some cases, the effective channel width is calculated using the enclosed channel width. The value may differ from that calculated using the channel width.

[0150] The transistor 600 includes an insulating film 652 on a substrate 640 and an oxide semiconductor layer 653 on the insulating film 652. A stack of a layer including a dielectric film 661 and an oxide semiconductor film 662 in this order, and a layer including a dielectric film 663 electrically connected to part of the stack. A source electrode 671 and a drain electrode 672 are stacked, and a part of the stack, a part of the source electrode 671, The oxide semiconductor 663 covers a part of the stack, a part of the source electrode 672, and a part of the drain electrode 672. A part of the gate insulator 671 overlaps with the gate electrode 672, a part of the drain electrode 672, and the oxide semiconductor 663. The insulating film 653 and the gate electrode 673, the source electrode 671 and the drain electrode 672, etc. In addition, it has an insulating film 654 on the gate electrode 673 , and an insulating film 655 on the insulating film 654 . Note that the oxide semiconductors 661, 662, and 663 are collectively represented by This is referred to as an oxide semiconductor 660.

[0151] At least a part (or a part) of the source electrode 671 (and / or the drain electrode 672) (all of) is a semiconductor layer such as oxide semiconductor 662 (and / or oxide semiconductor 661). At least a part (or all) of the surface, side, upper surface, and / or lower surface of There are.

[0152] Alternatively, at least a portion ( or all of the oxide semiconductor 662 (and / or the oxide semiconductor 661) contacting at least a portion (or all) of the surface, side, top, and / or bottom surface of the layer; Alternatively, at least the source electrode 671 (and / or the drain electrode 672) A part (or all) of the oxide semiconductor 662 (and / or the oxide semiconductor 661) The semiconductor layer is in contact with at least a portion (or the entirety) of the semiconductor layer.

[0153] Alternatively, at least a portion ( or all of the oxide semiconductor 662 (and / or the oxide semiconductor 661) At least a part (or all) of the surface, side, top, and / or bottom surface of the layer and an electrical Alternatively, the source electrode 671 (and / or the drain electrode 672) At least a part (or all) of the oxide semiconductor 662 (and / or the oxide semiconductor 6 61) and a part (or the whole) of the semiconductor layer.

[0154] Alternatively, at least a portion ( or all of the oxide semiconductor 662 (and / or the oxide semiconductor 661) Adjacent to at least a portion (or all) of the surface, side, top, and / or bottom surface of the layer Alternatively, the source electrode 671 (and / or the drain electrode 672) At least a part (or all) of the oxide semiconductor 662 (and / or the oxide semiconductor 6 61) in close proximity to some (or all) of the semiconductor layer.

[0155] Alternatively, at least a portion ( or all of the oxide semiconductor 662 (and / or the oxide semiconductor 661) At least a portion (or all) of the lateral surface, side surface, upper surface, and / or lower surface of the layer. Alternatively, the source electrode 671 (and / or the drain electrode 672) is placed at a low At least a part (or the whole) of the oxide semiconductor 662 (and / or the oxide semiconductor 661 ) on the side of some (or all) of the semiconductor layer.

[0156] Alternatively, at least a portion ( or all of the oxide semiconductor 662 (and / or the oxide semiconductor 661) At least a part (or all) of the surface, side, top, and / or bottom of the layer Alternatively, the source electrode 671 (and / or the drain electrode 672) At least a part (or all) of the oxide semiconductor 662 (and / or the oxide semiconductor 6 61) or the like.

[0157] Alternatively, at least a portion ( or all of the oxide semiconductor 662 (and / or the oxide semiconductor 661) A layer is disposed on at least a portion (or all) of the surface, side, upper surface, and / or lower surface. Alternatively, the source electrode 671 (and / or the drain electrode 672) is placed at a low At least a part (or all) of the oxide semiconductor 662 (and / or the oxide semiconductor 661 ) or a portion (or all) of a semiconductor layer.

[0158] The functions of the "source" and "drain" of a transistor are different for transistors of different polarities. This may be reversed when using a current source or when the direction of the current changes during circuit operation. For this reason, in this specification, the terms "source" and "drain" are used interchangeably. It is possible to use it in a variety of ways.

[0159] The transistor according to one embodiment of the present invention preferably has a channel length of 10 nm or more and 1000 nm or less. Preferably, the channel length is 20 nm or more and 500 nm or less, more preferably, the channel length is 30 nm or less. It is a top-gate structure of less than 300 nm.

[0160] The components included in the semiconductor device of this embodiment will be described in detail below.

[0161] <Substrate> The substrate 640 is not limited to being a simple support material, but may also be a substrate on which other devices such as transistors are formed. In this case, the gate electrode 673 and the source electrode 6 71, and one of the drain electrodes 672 are electrically connected to the other devices described above. This is also fine.

[0162] <Undercoating insulating film> The insulating film 652 has a function of preventing the diffusion of impurities from the substrate 640 and also serves to prevent the oxide semiconductor from diffusing. The insulating film 652 can supply oxygen to the conductor 660. It is preferable that the composition contains oxygen in an amount greater than the stoichiometric composition, and more preferable that the composition contains oxygen in an amount greater than the stoichiometric composition. For example, , by TDS (Thermal Desorption Spectroscopy) method , the amount of oxygen released in terms of oxygen atoms is 1.0 × 10 19 atoms / cm 3 That's all. The surface temperature of the film during the TDS analysis was 100°C to 700°C. The temperature range is preferably 100° C. or more and 500° C. or less. When the substrate 650 is a substrate on which other devices are formed, the insulating film 652 is formed so that the surface is flat. Then, flatten it by CMP (Chemical Mechanical Polishing) etc. It is preferable to carry out a chemical treatment.

[0163] The insulating film 652 is made of aluminum oxide, aluminum oxynitride, magnesium oxide, silicon oxide, or the like. Silicon, silicon oxide nitride, gallium oxide, germanium oxide, yttrium oxide, oxide Zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide and tantalum oxide Oxide insulating film, silicon nitride, silicon oxynitride, aluminum oxynitride, and other nitride insulating films The barrier layer may be formed using a membrane or a membrane made of a mixture of the above materials.

[0164] <Oxide semiconductor> The oxide semiconductor 660 is typically an In-Ga oxide, an In-Zn oxide, or an In-Mn oxide. Zn oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn or Hf) In particular, the oxide semiconductor 660 is an In-M-Zn oxide (wherein M is Ti, Ga, Y). , Zr, La, Ce, Nd, Sn or Hf) are preferably used.

[0165] However, the oxide semiconductor 660 is not limited to an oxide containing indium. 660 may be, for example, Zn--Sn oxide or Ga--Sn oxide.

[0166] The oxide semiconductor 660 is an In-M-Zn oxide (M is Ti) prepared by a sputtering method. , Ga, Y, Zr, La, Ce, Nd, Sn or Hf), In-M-Zn oxide The atomic ratio of the metal elements in the target used for forming the film satisfies In≧M, Zn≧M. The atomic ratio of the metal elements in such a target is preferably In:M:Zn. =1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2, In: The atomic ratio of M:Zn is preferably 2:1:3. The atomic ratio of the metal elements contained in the sputtering target is included as an error. Including a fluctuation of minus 40%.

[0167] Next, an oxide semiconductor 661, an oxide semiconductor 662, and an oxide semiconductor 663 are stacked. The function and effect of the oxide semiconductor 660 will be described with reference to the example shown in FIG. The energy band structure diagram is used to explain the transistor shown in FIG. FIG. 10B is an enlarged view of the channel region of the transistor 600. The energy band structure of the area indicated by the dashed line is shown in FIG. 1 shows the energy band structure of the channel region of transistor 600.

[0168] In Figure 10(B), Ec652, Ec661, Ec662, Ec663, and Ec653 are The insulating film 652, the oxide semiconductor 661, the oxide semiconductor 662, and the oxide semiconductor 663 are respectively , indicates the energy of the bottom of the conduction band of the gate insulating film 653.

[0169] Here, the difference between the vacuum level and the conduction band minimum energy (also called "electron affinity") is The energy difference between the vacant level and the top of the valence band (also called the ionization potential) The energy gap is calculated by subtracting the energy gap from the spectroscopic ellipsometer ( It can be measured using HORIBA JOBIN YVON UT-300. The energy difference between the unoccupied level and the top of the valence band was determined by ultraviolet photoelectron spectroscopy (UPS). iolet Photoelectron Spectroscopy (PHI) It can be measured using a VersaProbe.

[0170] The sputtering target used had an atomic ratio of In:Ga:Zn=1:3:2. The energy gap of the synthesized In-Ga-Zn oxide is about 3.5 eV, and the electron affinity is about 4 The atomic ratio of In:Ga:Zn is 1:3:4. The energy gap of the In-Ga-Zn oxide formed using the get is about 3.4 eV. The electron affinity is about 4.5 eV. The atomic ratio of In:Ga:Zn is 1:3:6. Energy gap of In-Ga-Zn oxide formed using a sputtering target The electron affinity is about 4.5 eV. The atomic ratio of In:Ga:Zn In-Ga-Zn oxide was formed using a sputtering target with a ratio of 1:6:2. The energy gap is about 3.9 eV and the electron affinity is about 4.3 eV. In-Ga formed using a sputtering target with In:Ga:Zn=1:6:8 The energy gap of -Zn oxide is about 3.5 eV and the electron affinity is about 4.4 eV. In addition, a sputtering target with an atomic ratio of In:Ga:Zn=1:6:10 was used. The energy gap of the formed In-Ga-Zn oxide is about 3.5 eV, and the electron affinity is about The atomic ratio of In:Ga:Zn is 1:1:1. The energy gap of the In-Ga-Zn oxide formed using a target was approximately 3.2 eV. The electron affinity is about 4.7 eV. The atomic ratio of In:Ga:Zn is 3:1:2. Energy gap of In-Ga-Zn oxide formed using a sputtering target The electron affinity is about 5.0 eV and the electron pump is about 2.8 eV.

[0171] Since the insulating film 652 and the gate insulating film 653 are insulators, Ec653 and Ec652 are Closer to the vacuum level (lower electron affinity) than C661, Ec662, and Ec663 .

[0172] Also, Ec661 is closer to the vacuum level than Ec662. More than 0.05 eV, more than 0.07 eV, more than 0.1 eV, or more than 0.15 eV higher than C662 V or more and 2 eV or less, 1 eV or less, 0.5 eV or less, or 0.4 eV or less at the vacuum level Close proximity is preferable.

[0173] Also, Ec663 is closer to the vacuum level than Ec662. More than 0.05 eV, more than 0.07 eV, more than 0.1 eV, or more than 0.15 eV higher than C662 V or more and 2 eV or less, 1 eV or less, 0.5 eV or less, or 0.4 eV or less at the vacuum level Close proximity is preferable.

[0174] In addition, the oxide semiconductor 661 and the oxide semiconductor 662 are adjacent to each other. In the vicinity of the interface between the oxide semiconductor 663 and the oxide semiconductor 662, a mixed region is formed, so that the conduction band minimum The energy changes continuously; that is, at these interfaces, there are no levels or almost no levels. Not at all.

[0175] Therefore, in the stacked structure having the above energy band structure, electrons are transported through the oxide semiconductor 66 Therefore, the oxide semiconductor 661 and the insulating film 652 are mainly moved through the interface 661. If a level exists at the interface between the oxide semiconductor 663 and the gate insulating film 653, The level has almost no effect on the electron transfer. The oxide semiconductor 663 has a level at an interface with the conductor 662 and at an interface between the oxide semiconductor 662 and the oxide semiconductor 663. Since it is absent or almost absent, it does not impede the movement of electrons in the region. Therefore, the transistor 600 having the above-described oxide semiconductor stack structure has high field-effect mobility. degree can be realized.

[0176] As shown in FIG. 10B, the interface between the oxide semiconductor 661 and the insulating film 652 and the oxide In the vicinity of the interface between the semiconductor 663 and the gate insulating film 653, there are trap quasi-electrodes due to impurities and defects. Although the oxide semiconductor 661 and the oxide semiconductor 663 may be formed at the site Et600, This can separate the oxide semiconductor 662 from the trap states.

[0177] In particular, the transistor 600 illustrated in this embodiment has an oxide The top surface and side surfaces of the semiconductor 662 are in contact with the oxide semiconductor 663, and the bottom surface of the oxide semiconductor 662 is in contact with the oxide semiconductor 663. The oxide semiconductor 661 is formed in contact with the oxide semiconductor 662 (see FIG. 9C). The oxide semiconductor 661 and the oxide semiconductor 663 cover the substrate 662. The effect of the trip level can be further reduced.

[0178] However, if the energy difference between Ec661 or Ec663 and Ec662 is small, Electrons in the compound semiconductor 662 may exceed the energy difference and reach the trap level. When electrons are captured in the trap level, a negative fixed charge is generated at the interface of the insulating film, causing a transistor. The threshold voltage of the transistor is shifted in the positive direction.

[0179] Therefore, the energy difference between Ec661, Ec663 and Ec662 is 0 If the capacitance is set to 0.1 eV or more, preferably 0.15 eV or more, the change in the threshold voltage of the transistor is This is preferable because the electric characteristics of the transistor can be improved by reducing the electric field. .

[0180] The band gaps of the oxide semiconductor 661 and the oxide semiconductor 663 are It is preferable that the band gap is wider than that of the body 662 .

[0181] The oxide semiconductor 661 and the oxide semiconductor 663 may include, for example, Al, Ti, Ga, Ge, Contains Y, Zr, Sn, La, Ce or Hf in a higher atomic ratio than oxide semiconductor 662 Specifically, the atomic ratio is 1.5 times or more, preferably 2 times The above elements are strongly bonded to oxygen, so oxygen deficiency occurs. The oxide semiconductor 661 has a function of suppressing the generation of loss in the oxide semiconductor. In addition, oxygen vacancies are less likely to occur in the oxide semiconductor 663 than in the oxide semiconductor 662. This can be done.

[0182] Note that the oxide semiconductor 661, the oxide semiconductor 662, and the oxide semiconductor 663 are at least Indium, zinc and M (Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce or When the oxide semiconductor 661 is an In-M-Zn oxide containing an In:M metal, Zn=x1:y1:z1 [atomic ratio], oxide semiconductor 662 is In:M:Zn=x2: y2:z2 [atomic ratio], and oxide semiconductor 663 is In:M:Zn=x3:y3:z3 [atomic ratio]. If the ratio of the number of x1 and y3 / x3 is larger than the ratio of y2 / x2, then y1 / x1 and y3 / x3 are at least 1.5 times, preferably 2 times, greater than y2 / x2. At this time, in the oxide semiconductor 662, y2 If y2 is greater than or equal to x2, the electrical characteristics of the transistor can be stabilized. If it is more than three times larger than x2, the field effect mobility of the transistor will decrease, so y2 is It is preferably less than three times x2.

[0183] In and M except for Zn and O in the oxide semiconductor 661 and the oxide semiconductor 663 The atomic ratio is preferably less than 50 atomic % for In and 50 atomic % or more for M. More preferably, In is less than 25 atomic % and M is 75 atomic % or more. In addition, the atomic ratio of In and M, excluding Zn and O, in the oxide semiconductor 662 is preferably Preferably, In is 25 atomic % or more and M is less than 75 atomic %, and more preferably In is 34 atomic % or more and M is less than 66 atomic %.

[0184] The oxide semiconductor 661 and the oxide semiconductor 663 each have a thickness of 3 nm or more and 100 nm or less. The thickness of the oxide semiconductor 662 is preferably 3 nm or more and 50 nm or less. At most 200 nm, preferably 3 nm to 100 nm, and more preferably 3 nm or more The oxide semiconductor 662 is a semiconductor having a thickness of 50 nm or less. It is preferable that it is thicker than the conductor 663 .

[0185] In order to provide a transistor with an oxide semiconductor channel with stable electrical characteristics, The present invention relates to a method for reducing the impurity concentration in an oxide semiconductor to make the oxide semiconductor intrinsic or substantially intrinsic. Here, the term "substantially intrinsic" means that the carrier density of the oxide semiconductor is 1× 10 17 / cm 3 Preferably less than 1 × 10 15 / cm 3 Less than More preferably, 1×10 13 / cm 3 It means that it is less than.

[0186] In addition, in an oxide semiconductor, hydrogen, nitrogen, carbon, silicon, and metal elements other than the main component For example, hydrogen and nitrogen contribute to the formation of donor levels, increasing the carrier density. In addition, silicon contributes to the formation of impurity levels in an oxide semiconductor. The impurity levels can become traps and degrade the electrical characteristics of the transistor. Therefore, in the layers of the oxide semiconductor 661, the oxide semiconductor 662, and the oxide semiconductor 663, It is preferable to reduce the impurity concentration at each interface.

[0187] In order to make an oxide semiconductor intrinsic or substantially intrinsic, for example, , at a certain depth in the oxide semiconductor or in a certain region in the oxide semiconductor, The concentration of 19 atoms / cm 3 Less than 5 x 10 18 atoms / c m 3 less than 1×10 18 atoms / cm 3 In addition, hydrogen concentration is less than The degree may be, for example, at a certain depth in the oxide semiconductor or in a certain region of the oxide semiconductor. , 2×10 20 atoms / cm 3 Less than or equal to 5×10 19 atoms / cm 3 Less than or equal to 1×10 19 atoms / cm 3 Less than or equal to 5×1, more preferably 0 18 atoms / cm 3 The nitrogen concentration is, for example, 5×10 at a depth or in a region of the oxide semiconductor 19 atoms / c m 3 Less than 5 x 10 18 atoms / cm 3 Less than or equal to 1×10 1 8 atoms / cm 3 Less than 5×10, more preferably 17 atoms / cm 3 The following do.

[0188] In addition, when the oxide semiconductor contains crystals, if silicon or carbon is contained at a high concentration, the oxide semiconductor In order to prevent the crystallinity of the oxide semiconductor from being reduced, For example, at a certain depth in the oxide semiconductor or in a certain region in the oxide semiconductor, Silicon concentration 1×10 19 atoms / cm 3 Less than 5 x 1018 atom s / cm 3 less than 1×10 18 atoms / cm 3 The portion that is less than In addition, for example, at a certain depth of the oxide semiconductor or In a given area of ​​the body, the carbon concentration is increased to 1×10 19 atoms / cm 3 Less than 5, preferably ×10 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 It is sufficient that the part is less than

[0189] In addition, the transistor using the purified oxide semiconductor for the channel region as described above can be The off-state current is extremely small. For example, when the voltage between the source and drain is set to 0.1 V, 5 V, or When the voltage is set to about 10 V, the off-state current normalized by the channel width of the transistor is several y It is possible to reduce the resistance from A / μm to several zA / μm.

[0190] In the transistor 600 described in this embodiment, the oxide semiconductor 660 is Since the gate electrode 673 is formed so as to electrically surround the oxide semiconductor 660, In addition to the gate electric field applied vertically, a gate electric field is also applied from the side. (See FIG. 9C). That is, a gate electric field is applied to the entire oxide semiconductor. As a result, a current flows through the entire oxide semiconductor 662 serving as a channel, and an on-current can be improved.

[0191] <Crystal structure of oxide semiconductor> Next, the structure of the oxide semiconductor film will be described.

[0192] In this specification, "parallel" means that the angle between two straight lines is between -10° and 10°. Therefore, it includes the case where the angle is between -5° and 5°. "Approximately parallel" refers to a state in which two straight lines are arranged at an angle of -30° or more and 30° or less. "Perpendicular" means that two straight lines are arranged at an angle of 80° to 100°. Therefore, it includes the case where the angle is between 85° and 95°. refers to a state in which two straight lines are arranged at an angle of 60° or more and 120° or less.

[0193] In addition, in this specification, when the crystal is a trigonal or rhombohedral crystal, it is represented as a hexagonal crystal system. .

[0194] Oxide semiconductor films are classified into non-single-crystal oxide semiconductor films and single-crystal oxide semiconductor films. Alternatively, oxide semiconductors are divided into, for example, crystalline oxide semiconductors and amorphous oxide semiconductors. do.

[0195] As the non-single-crystal oxide semiconductor, CAAC-OS (C Axis Aligned Crystalline Oxide Semiconductor, polycrystalline oxide Semiconductors made of crystalline oxides include semiconductors made of microcrystalline oxides and amorphous oxides. The materials include single-crystal oxide semiconductors, CAAC-OS, polycrystalline oxide semiconductors, and microcrystalline oxides. Semiconductors, etc.

[0196] First, we will explain the CAAC-OS film.

[0197] The CAAC-OS film is one of oxide semiconductor films having a plurality of crystal parts aligned along the c-axis.

[0198] Transmission Electron Microscope (TEM) A bright-field image and a combined diffraction pattern of the CAAC-OS film were obtained by using a microscope. By observing the TEM image, multiple crystalline regions can be confirmed. On the other hand, the high-resolution TEM image also shows clear boundaries between crystals, i.e., grain boundaries. Therefore, the CAAC-OS film is It can be said that the decrease in electron mobility caused by grain boundaries is unlikely to occur.

[0199] When a high-resolution TEM image of the cross section of the CAAC-OS film was observed from a direction approximately parallel to the sample surface, It can be seen that the metal atoms are arranged in layers in the crystal part. Each layer of metal atoms is The CAAC-OS film is formed on the surface (also called the surface on which the film is formed) or on the upper surface. The CAAC-OS film has a shape similar to that of the crystalline silicon film, and is aligned parallel to the surface on which the CAAC-OS film is formed or the upper surface.

[0200] On the other hand, a high-resolution TEM image of the plane of the CAAC-OS film was observed from a direction approximately perpendicular to the sample surface. It was confirmed that the metal atoms in the crystals were arranged in triangular or hexagonal shapes. However, there is no regularity in the arrangement of metal atoms between different crystal parts.

[0201] X-ray diffraction (XRD) was performed on the CAAC-OS film. For example, a CAAC-OS film with InGaZnO4 crystals was In the out-of-plane analysis, a peak was observed at a diffraction angle (2θ) of approximately 31°. This peak is attributed to the (009) plane of the InGaZnO4 crystal. From this, it can be seen that the crystals of the CAAC-OS film have a c-axis orientation, and the c-axis is approximately aligned on the surface on which the film is formed or on the upper surface. You can see that it is oriented vertically.

[0202] In addition, the out-of-plane method of CAAC-OS film with InGaZnO4 crystals In the analysis by , in addition to the peak at 2θ near 31°, a peak also appeared at 2θ near 36°. The peak at 2θ of around 36° may be due to the c-axis orientation in some parts of the CAAC-OS film. The CAAC-OS film contains crystals that do not have a 2θ of around 31°. It is preferred that the spectrum exhibits a peak and does not exhibit a peak at 2θ of around 36°.

[0203] The CAAC-OS film is an oxide semiconductor film with a low concentration of impurities. The impurities include hydrogen, carbon, and The elements are other than the main components of the oxide semiconductor film, such as silicon and transition metal elements. The elements that bond to oxygen more strongly than the metal elements that form the oxide semiconductor film, such as arsenic, are oxidized. By removing oxygen from the oxide semiconductor film, the atomic arrangement of the oxide semiconductor film is disrupted, reducing its crystallinity. In addition, heavy metals such as iron and nickel, argon, and carbon dioxide have an atomic radius of Since the molecular radius is large, when the cation is included in the oxide semiconductor film, the The impurities contained in the oxide semiconductor film are likely to disturb the atomic arrangement and cause a decrease in crystallinity. Objects can act as carrier traps or carrier generation sources.

[0204] The CAAC-OS film is an oxide semiconductor film having a low density of defect states. Oxygen vacancies in the semiconductor film can become carrier traps or trap hydrogen, It can be a carrier source.

[0205] A material with a low impurity concentration and a low defect level density (few oxygen vacancies) is called a high-purity intrinsic or The term "substantially high-purity intrinsic" refers to a highly-purified intrinsic oxide semiconductor film. Since there are fewer carrier generation sources, the carrier density can be reduced. The transistor including the oxide semiconductor film has electrical characteristics in which the threshold voltage is negative ( Also called normally-on.) In addition, high purity intrinsic or substantially high purity The highly intrinsic oxide semiconductor film has few carrier traps. The transistors using the thin film have small fluctuations in electrical characteristics and are highly reliable. Note that it takes a certain time for charges trapped in the carrier traps in the oxide semiconductor film to be released. The time when the charge is released is long, and it may behave as if it is a fixed charge. A transistor using an oxide semiconductor film having a high density of defect states has unstable electrical characteristics. This may be the case.

[0206] In addition, the electrical characteristics of transistors using CAAC-OS films were improved by irradiation with visible light or ultraviolet light. The fluctuation is small.

[0207] Next, a microcrystalline oxide semiconductor film will be described.

[0208] The microcrystalline oxide semiconductor film has a region where crystals can be confirmed in a high-resolution TEM image. The microcrystalline oxide semiconductor film has a crystal structure including a region where a crystal part is not clearly observed and a region where a crystal part is not clearly observed. The crystal part contained in the crystal has a size of 1 nm to 100 nm or 1 nm to 10 nm. In particular, the fineness is often between 1 nm and 10 nm, or between 1 nm and 3 nm. The oxide semiconductor film having nanocrystals (nc) is called nc -OS(nanocrystalline oxide semiconductor) In the nc-OS film, for example, the grain boundaries are clearly identified in high-resolution TEM images. It may not be possible to recognize

[0209] The nc-OS film is a microscopic region (e.g., a region of 1 nm to 10 nm, especially a region of 1 nm or more). The atomic arrangement has periodicity in the region of 3 nm or less. There is no regularity in the crystal orientation between the crystal parts. Therefore, no orientation is observed throughout the film. Therefore, the nc-OS film cannot be distinguished from an amorphous oxide semiconductor film depending on the analysis method. For example, X-ray diffraction (XR) is used to measure the nc-OS film using X-rays with a diameter larger than that of the crystals. When structural analysis was performed using the D instrument, the crystal plane In addition, the peaks indicating the probe size were not detected in the nc-OS film. Electron diffraction (also called selected area electron diffraction) using an electron beam with a diameter (for example, 50 nm or more) When the diffraction pattern is changed to 0.05μm, a halo-like diffraction pattern is observed. Nano-beam electrons are used, which use an electron beam with a probe diameter close to or smaller than the size of the crystal part. When diffraction is performed, spots are observed. When this is done, a circular (ring-shaped) area of ​​high brightness may be observed. Nanobeam electron diffraction of the nc-OS film revealed multiple spots within the ring-shaped region. It may be observed.

[0210] The nc-OS film is an oxide semiconductor film that has higher order than an amorphous oxide semiconductor film. Therefore, the nc-OS film has a lower density of defect states than the amorphous oxide semiconductor film. In the nc-OS film, there is no regularity in the crystal orientation between different crystal parts. The S film has a higher density of defect states than the CAAC-OS film.

[0211] Next, the amorphous oxide semiconductor film will be described.

[0212] The amorphous oxide semiconductor film is an oxide semiconductor film in which the atomic arrangement in the film is irregular and does not have a crystal part. An example is an oxide semiconductor film that has an amorphous state, such as quartz.

[0213] In the amorphous oxide semiconductor film, no crystalline parts can be confirmed in a high-resolution TEM image.

[0214] When the structure of the amorphous oxide semiconductor film is analyzed using an XRD device, out-of-p In the lane analysis, no peaks indicating crystal planes were detected. When electron diffraction is performed on a conductive film, a halo pattern is observed. When nanobeam electron diffraction is performed on a conductive film, no spots are observed, and a halo pattern is observed. Observed.

[0215] Note that the oxide semiconductor film has a structure that exhibits physical properties between the nc-OS film and the amorphous oxide semiconductor film. An oxide semiconductor film having such a structure may have a structure such as the following. Amorphous-like Oxide Semiconductor (a-like OS) The conductor membrane is called the endothelium.

[0216] In the a-like OS film, voids are observed in the high-resolution TEM image. In addition, crystals may be clearly visible in high-resolution TEM images. The a-like OS film has a region in which a crystal part is not observed and a region in which a crystal part is not observed. Crystallization occurs due to the small amount of electron irradiation, which is the level observed in TEM observations, and the growth of the crystals can be seen. On the other hand, if the nc-OS film is of good quality, the small amount of charge observed by TEM can be observed. Almost no crystallization due to electron irradiation was observed.

[0217] The size of the crystals in the a-like OS film and the nc-OS film was measured using a high-resolution T This can be done using EM images. For example, InGaZnO4 crystals have a layered structure, There are two Ga-Zn-O layers between the In-O layers. Unit cell of the InGaZnO4 crystal The layer has three In-O layers and six Ga-Zn-O layers, for a total of nine layers aligned in the c-axis direction. The spacing between adjacent layers is therefore the (009) plane. This is approximately the same as the lattice spacing (also called the d value), and crystal structure analysis has determined that this value is 0.29 nm Therefore, we focused on the lattice fringes in high-resolution TEM images and In the region where the distance is between 0.28 nm and 0.30 nm, the lattice fringes are InG aIt corresponds to the ab plane of the ZnO4 crystal.

[0218] In addition, the density of an oxide semiconductor film may differ depending on the structure. If the composition of the membrane is known, the density can be determined by comparing it with that of a single crystal of the same composition. The structure of the oxide semiconductor film can be estimated. The density of the OS-like film is 78.6% or more and less than 92.3%. The density of the nc-OS film and the CAAC-OS film was 92.3% or more. Note that an oxide semiconductor film having a density of less than 78% of the density of a single crystal is The film formation itself is difficult.

[0219] The above will be explained using a specific example. For example, In:Ga:Zn=1:1:1 [atomic In the oxide semiconductor film that satisfies the ratio of the number of ZnO atoms to the number of ZnO atoms, single crystal InGaZnO4 with a rhombohedral crystal structure is The density of is 6.357g / cm 3 Therefore, for example, In:Ga:Zn=1:1:1 In the oxide semiconductor film that satisfies the atomic ratio, the density of the a-like OS film is 5.0 g / cm 3 More than 5.9g / cm 3 For example, In:Ga:Zn=1:1: In the oxide semiconductor film that satisfies the atomic ratio of 1, the density of the nc-OS film and the CAAC- The density of the OS film is 5.9 g / cm 3 More than 6.3g / cm 3 It will be less than.

[0220] In addition, there are cases where single crystals with the same composition do not exist. In such cases, the composition may differ in any ratio. By combining single crystals, it is possible to calculate the density equivalent to a single crystal of the desired composition. The density of a single crystal of a desired composition can be determined by the ratio of the single crystals of different compositions. However, the density should be calculated using as few types of single crystals as possible. It is preferable to perform the calculation in combination.

[0221] Note that the oxide semiconductor film may be, for example, an amorphous oxide semiconductor film, an a-like OS film, or a microcrystalline oxide semiconductor film. The semiconductor layer may be a stacked film including two or more of a crystalline oxide semiconductor film and a CAAC-OS film.

[0222] In addition, the following conditions were applied to form the CAAC-OS film by sputtering. is preferred.

[0223] By reducing the amount of impurities mixed in during film formation, it is possible to prevent the crystal state from being destroyed by impurities. For example, the concentration of impurities present in the process chamber (such as hydrogen, water, carbon dioxide, and nitrogen) In addition, the impurity concentration in the deposition gas may be reduced. A deposition gas having a temperature of −80° C. or lower, preferably −100° C. or lower is used.

[0224] In addition, by increasing the substrate heating temperature during film formation, the migration of sputtered particles after they reach the substrate is reduced. Specifically, the substrate heating temperature is set to 100° C. or higher and 740° C. or lower, preferably The deposition temperature is set to 200°C or higher and 500°C or lower. When plate- or pellet-shaped sputtered particles reach the substrate, they migrate on the substrate. Sputtering occurs and the flat surface of the sputtered particle adheres to the substrate.

[0225] In addition, by increasing the oxygen ratio in the deposition gas and optimizing the power, plasma damage during deposition is reduced. The oxygen ratio in the deposition gas is preferably 30% by volume or more, and more preferably 100% by volume or more. The product is %.

[0226] As an example of the target, an In-Ga-Zn oxide target will be described below.

[0227] InO X powder, GaO Y Powder and ZnO Z The powders are mixed in a specified molar ratio and pressurized. Then, it is heated at a temperature between 1000℃ and 1500℃ to produce polycrystalline In-G The target is a-Zn oxide. X, Y, and Z are any positive numbers. , the predetermined molar ratio is, for example, InO X powder, GaO Y Powder and ZnOZ Powder, 2 :2:1, 8:4:3, 3:1:1, 1:1:1, 4:2:3, 1:4:4, 3:1:2 The powder types and the molar ratio of the powders to be mixed are determined according to the conditions of the preparation. The amount of the target can be appropriately changed depending on the target.

[0228] <Gate electrode> The gate electrode 673 is made of chromium (Cr), copper (Cu), aluminum (Al), or gold (Au). , Silver (Ag), Zinc (Zn), Molybdenum (Mo), Tantalum (Ta), Titanium (Ti) , Tungsten (W), Manganese (Mn), Nickel (Ni), Iron (Fe), Cobalt ( Metal elements selected from the group consisting of Co, ruthenium (Ru), and alloys containing the above-mentioned metal elements. Alternatively, the metal elements may be combined to form an alloy. The gate electrode 673 may have a single-layer structure or a laminated structure of two or more layers. A single-layer structure of an aluminum film containing titanium, a two-layer structure of an aluminum film with a titanium film laminated on it, Two-layer structure with a titanium film laminated on a titanium nitride film, and a tungsten film laminated on a titanium nitride film A two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film. Two-layer structure: titanium film, aluminum film laminated on top of the titanium film, and titanium on top of that. The three-layer structure of the Cu-Mn alloy film, the single-layer structure of the Cu-Mn alloy film, and the Cu film on the Cu-Mn alloy film A two-layer structure in which a Cu film is laminated on a Cu-Mn alloy film, and a Cu-Mn alloy film is further laminated on top of that. In particular, Cu-Mn alloy films have low electrical resistance and are resistant to oxidation. This is preferred because it can form manganese oxide at the interface with the insulating film containing silicon and prevent Cu diffusion. I wish.

[0229] The gate electrode 673 is made of indium tin oxide or indium containing tungsten oxide. Oxide, indium zinc oxide with tungsten oxide, indium oxide with titanium oxide Indium tin oxide, indium zinc oxide, silicon oxide, etc. A light-transmitting conductive material such as doped indium tin oxide can also be used. Alternatively, the conductive material having light-transmitting properties and the metal element may be laminated together.

[0230] <Gate insulating film> The gate insulating film 653 may be formed of aluminum oxide, magnesium oxide, silicon oxide, or nitride oxide. Silicon oxide, silicon nitride, silicon oxide, gallium oxide, germanium oxide, Yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide and An insulating film containing one or more types of tantalum oxide can be used. The gate insulating film 653 may be a laminate of the above materials. , zirconium (Zr), etc. may be contained as impurities.

[0231] Next, an example of a laminated structure of the gate insulating film 653 will be described. The gate insulating film 653 is For example, it contains oxygen, nitrogen, silicon, hafnium, etc. Specifically, hafnium oxide and preferably includes silicon oxide or silicon oxynitride.

[0232] Hafnium oxide has a higher dielectric constant than silicon oxide and silicon oxynitride. Since the physical thickness can be made larger than the equivalent oxide thickness, the equivalent oxide thickness can be made 10 nm or less. Even if the thickness is reduced to 5 nm or less, the leakage current due to the tunnel current can be reduced. In other words, a transistor with a small off-state current can be realized. Hafnium oxide having an amorphous structure has a higher dielectric constant than hafnium oxide having an amorphous structure. Therefore, in order to obtain a transistor with a small off-state current, It is preferable to use hafnium oxide, which has a crystal structure such as monoclinic or cubic. However, one embodiment of the present invention is not limited to these.

[0233] <Source and drain electrodes> The source electrode 671 and the drain electrode 672 are made of the same material as the gate electrode 673. In particular, the Cu-Mn alloy film has low electrical resistance and is a good This is preferable because it can form manganese oxide at the interface with the copper, thereby preventing the diffusion of copper.

[0234] <Protective insulating film> The insulating film 654 is a blocking material for oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc. The insulating film 654 prevents oxygen from the oxide semiconductor 660 from entering the outside. and the intrusion of hydrogen, water, and the like into the oxide semiconductor 660 from the outside. The insulating film 654 can be, for example, a nitride insulating film. Examples include silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide. In addition, blocking effects of oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc. Instead of a nitride insulating film, which has a blocking effect against oxygen, hydrogen, water, etc., an oxide insulating film is used. An oxide insulating film having a blocking effect against oxygen, hydrogen, water, etc. may be provided. Examples include aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, Yttrium oxide, yttrium oxynitride, hafnium oxide, hafnium oxynitride, etc. do.

[0235] The aluminum oxide membrane is permeable to both impurities such as hydrogen and moisture, and oxygen. Therefore, aluminum oxide is preferable for use as the insulating film 654 because it has a high blocking effect. The aluminum film improves the electrical characteristics of the transistor during and after the transistor manufacturing process. Preventing impurities such as hydrogen and moisture, which are factors that cause fluctuations in the oxide semiconductor 660, from entering the oxide semiconductor 660; Preventing the release of oxygen from the oxide semiconductor, which is the main component material of the semiconductor 660, and insulating film 6 It is suitable for use as a protective film having the effect of preventing unnecessary release of oxygen from 52. In addition, oxygen contained in the aluminum oxide film can be diffused into the oxide semiconductor. .

[0236] <Interlayer insulating film> In addition, an insulating film 655 is preferably formed over the insulating film 654. are magnesium oxide, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride , gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lath oxide The insulating film contains one or more of tantalum oxide, neodymium oxide, hafnium oxide, and tantalum oxide. The insulating film may be a laminate of the above materials.

[0237] <Second gate electrode> In FIG. 9, an example in which the transistor 600 has one gate electrode is shown. One embodiment of the present invention is not limited to this. For example, the transistor 600 may have a conductive film 674 as a second gate electrode. Examples of the arrangement are shown in FIG. 11(A) to FIG. 11(D). FIG. 11(A) is a top view. 11(A) corresponds to FIG. 11(B), and The cross section along the dashed line X1-X2 shown in FIG. 11(A) corresponds to FIG. 11(C). The cross section taken along the dashed line X3-X4 corresponds to FIG. 11(D). In 11(D), some elements may be enlarged, reduced, or omitted for clarity. There are.

[0238] The conductive film 674 may be formed by referring to the description of the gate electrode 673. The conductive film 674 has the same function as the gate electrode 673. The potential may be applied, or different potentials may be applied.

[0239] The configuration and method described in this embodiment may be appropriately combined with the configuration and method described in other embodiment. It can be used in combination.

[0240] (Embodiment 4) In this embodiment, an electronic device of one embodiment of the present invention will be described with reference to FIGS.

[0241] 12(A) to 12(F) are diagrams showing electronic devices. These electronic devices are 5000, display unit 5001, speaker 5003, LED lamp 5004, operation key 500 5 (including a power switch or an operation switch), a connection terminal 5006, a sensor 5007 ( , displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, Sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or one that includes a function for measuring infrared rays), a microphone 5008, etc. Cut.

[0242] FIG. 12A shows a mobile computer, which includes, in addition to the above, a switch 5009, The portable terminal 5010 may have an infrared port 5010. FIG. A type of image reproducing device (for example, a DVD reproducing device) that, in addition to the above, also has a second display 12C shows a goog In addition to the above, the display includes a second display unit 5002, a support unit 5012, The game machine may have earphones 5013, etc. FIG. 12(D) shows a portable game machine. In addition to the above, the device may have a recording medium reading unit 5011, etc. This is a digital camera with a TV receiving function. In addition to the above, it also has an antenna 5014, a shutter The mobile phone may have a touch button 5015, an image receiving unit 5016, etc. In addition to the above, the second display unit 5002, the recording medium reading unit 5011, etc.

[0243] The electronic devices shown in FIGS. 12A to 12F can have various functions. For example, functions to display various information (still images, videos, text images, etc.) on the display, touch Panel function, calendar, date or time display function, various software (programs, etc.) A function to control processing by a program, a wireless communication function, and a function to control various computers using the wireless communication function. Functions for connecting to computer networks, and wireless communication functions for sending or receiving various data The function of reading out the program or data recorded on the recording medium and displaying it on the display unit. Furthermore, in an electronic device having a plurality of display units, One display section is used mainly to display image information, and the other display section is used mainly to display text information. A function to display images with consideration for parallax on multiple displays to create a stereoscopic image. Furthermore, in electronic devices having an image receiving unit, The camera has the functions of taking still images, taking videos, and automatically or manually correcting the captured images. The function of storing the captured images on a recording medium (external or built-in to the camera) The display device can have a function of displaying an image on a display unit, etc. The functions that the electronic device shown in (F) can have are not limited to these, and it can have various functions. It is possible.

[0244] The electronic device described in this embodiment is a wireless device that has multiple batteries built in and can be wirelessly charged. It is characterized by having a line receiving section.

[0245] In addition, examples of use of the electronic device will be described with reference to FIGS.

[0246] FIG. 13(A) shows an example in which an information terminal is operated inside a moving body such as a car.

[0247] 5103 is a handle and has an antenna inside. The electronic device 5100 can be powered by a power supply from a power supply. The handset has a battery, at least one of which is charged by wireless charging. A jig for fixing the electronic device 5100 to the handle 5103 may be provided. 3, you can make hands-free phone or video calls by attaching the electronic device 5100 to the Also, voice authentication can be performed using a microphone installed in the electronic device 5100, and the driver's voice can be used to You can also use it to steer a car.

[0248] For example, the electronic device 5100 can be operated while the vehicle is stopped to display location information on the display unit 5102. In addition, information that is not displayed on the display unit 5101 of the car, such as engine speed, The steering angle, temperature, tire pressure, etc. may be displayed on the display unit 5102. 102 has a touch input function. It also uses one or more cameras to capture the outside of the vehicle. It is also possible to display the outside of the vehicle on the display unit 5102, for example as a rear monitor. It can also be used to prevent drowsy driving by receiving information such as driving speed from the car. The driver receives the signal wirelessly and monitors the vehicle speed while driving. If the eyes are closed for a long time, the electronic device 5100 will vibrate or sound an alarm. The driver can select the appropriate setting, such as playing music or playing the car alarm. The driver's image capture is stopped to save power, and the electronic device 5100 is wirelessly backed up while the vehicle is stopped. The battery may be rechargeable.

[0249] As described above, various uses are possible for vehicles and other moving objects, and the electronic device 5100 In order to provide these various functions, many sensors and multiple antennas are built in. It is desirable to have a power source for driving a vehicle such as a car. Considering power consumption, it is important to keep the power used by the electronic device 5100 as low as possible. This is preferable, and in particular, in an electric vehicle, the mileage is calculated based on the power consumption of the electronic device 5100. Even if the electronic device 5100 has various functions, it is possible that not all of the functions are Use only one or two features when necessary. In many cases, a battery is prepared for each function, and the electronic device 5100 has multiple batteries. If you want to have a variety of functions, you can turn on only the functions you want to use and By supplying power from a compatible battery, power saving can be achieved. The battery that corresponds to the stopped function is wirelessly charged from an antenna installed in the car. It can be charged.

[0250] FIG. 13B shows an example of operating an information terminal inside an aircraft. There may be restrictions on the time that personal information devices can be used on board, and If the flight is between 10:00 and 20:00, it is desirable to be able to use the information terminals installed on the aircraft.

[0251] The electronic device 5200 has a display unit 5202 for displaying images such as movies, games, and advertisements. The communication function allows the current flight position and remaining arrival time to be obtained in real time. The display portion 5202 has a touch input function.

[0252] In addition, the electronic device 5200 is fitted into a recess provided in the sheet 5201. The antenna installation part 5203 is provided at the position where it overlaps with the 0, so that wireless charging is possible while it is inserted. In addition, the electronic device 5200 can be used by users to notify the crew of illness, etc. It can also function as a telephone or contact tool. If the driver has a display unit 5200, even a crew member who speaks a different language from the flight attendant can read the display unit 5200. 202. Also, it is possible to communicate with neighboring languages. The passengers can communicate with each other using the display unit 5202 of the electronic device 5200. Also, for example, while the passenger is sleeping, the display unit 5202 can display "Please do not wake me up. It can also function as a message board, for example by continuously displaying "Message" in English.

[0253] The electronic device 5200 has a plurality of batteries for each function. It is a device that allows you to turn on only the functions you want to use and turn off the functions you do not use. This allows for power saving. In addition, among multiple batteries, the battery that corresponds to the stopped function can be selected. Terry can be wirelessly charged from the antenna installation section 5203.

[0254] In addition, it is difficult to bring dangerous goods on board an aircraft, and items with multiple small batteries The 5200 electronic device is highly safe, and even if one battery explodes, the size The small size of the device minimizes damage and reduces the risk of breakdown, explosion, or destruction. So, even if one battery becomes unusable, you can use another battery to keep your electronic device running. Some of the functions of 00 can be used.

[0255] In addition, if there is a problem with the aircraft's power system, the electronic devices in each of the multiple seats52 Multiple batteries of 00 may be designed for emergency use. Since all of the electronic devices in each of the 5200 are the same product and have the same design, The system may be constructed so that the power supplies can be connected in series.

[0256] The electronic device 5200 has a plurality of small batteries, such as lithium polymer batteries. Lithium-ion secondary battery, lithium-ion capacitor, electric double layer capacitor, redox One or more of the above capacitors can be used.

[0257] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments. can.

[0258] (Embodiment 5) In this embodiment, an example of an artificial organ which is one embodiment of the present invention will be described.

[0259] FIG. 14 is a schematic cross-sectional view showing an example of a pacemaker.

[0260] The pacemaker main body 5300 includes batteries 5301a and 5301b, a regulator, A control circuit, an antenna 5304, a wire 5302 to the right atrium, and a wire 530 to the right ventricle. 3 and at least

[0261] The pacemaker body 5300 is placed in the body by surgery, and the two wires are inserted into the subclavian bone of the human body. The wire is passed through a vein 5305 and a superior vena cava 5306, and one end of the wire is inserted into the right ventricle and the other end into the right ventricle. The tip of the wire is placed in the right atrium.

[0262] In addition, the antenna 5304 can receive power, and the power can be fed to multiple batteries 5301a, 5301b, 301b, which reduces the frequency of pacemaker replacement. The 5300 main unit has multiple batteries, making it highly safe and allowing you to continue using it even if one of them fails. The other one can still function even if the other one is turned off, so it can also function as an auxiliary power source. If the battery provided to the manufacturer is divided into several thin batteries, the CPU, etc. The control circuit including the control circuit is mounted on a printed circuit board, and the pacemaker body 5300 is small. It is possible to reduce the thickness of the pacemaker body 5300 and to mold it.

[0263] In addition to the antenna 5304 capable of receiving power, an antenna capable of transmitting physiological signals is provided. For example, physiological signals such as pulse, respiratory rate, heart rate, and temperature may be monitored by an external monitor. The system may be configured to monitor cardiac activity such that it can be seen at the device.

[0264] If the present embodiment can realize a compact and thin device, the pacemaker body 5300 can be embedded. This makes it possible to reduce the size of protrusions that occur in crowded areas to an inconspicuous level.

[0265] This method of installing a pacemaker is just one example, and there are various types depending on the heart disease. There may be cases where this occurs.

[0266] The present embodiment is not limited to pacemakers. There is an artificial organ called a cochlear implant. A cochlear implant converts sound into an electrical signal and transmits it through a stimulator placed inside the cochlea. This is a device that directly stimulates the auditory nerve.

[0267] There are two types of cochlear implants: the first type is a device that is surgically implanted deep in the ear, and the second type is a device that picks up sound with a microphone. The first device and the second device are electrically connected. The first device converts sound into electricity. The device has at least an antenna for receiving a signal and a wire that reaches the cochlea. The device includes a sound processor for converting sound into an electrical signal, and a second device for transmitting the electrical signal to the first device. and a transmitting circuit for receiving the signal.

[0268] In this embodiment, by providing small batteries in both the first device and the second device, This allows for the miniaturization of cochlear implants.

[0269] In addition, cochlear implants are often surgically implanted during childhood, so there is a demand for them to be smaller.

[0270] If the cochlear implant can be miniaturized according to this embodiment, it will be possible to reduce the amount of radiation generated at the site where the cochlear implant is implanted. This allows the size of the protrusions to be made inconspicuous.

[0271] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments. can.

[0272] (Embodiment 6) In this embodiment, an example of a wearable electronic device which is one embodiment of the present invention will be described.

[0273] When making an electronic device with a complex external shape, multiple small batteries should be appropriately arranged in predetermined locations. By placing the device in the position shown in FIG. 15(A), the degree of freedom in designing electronic devices can be increased. As shown, the electronic device 5400 is cylindrical and requires more than one battery to be attached to the human body. It is also possible to reduce the weight by dividing it into multiple batteries and arranging them appropriately. In addition, since the standby battery consumption increases when many functions are added, Prepare a battery. When using multiple functions, turn on only the functions you want to use and use the battery By supplying power from a

[0274] As shown in FIG. 15(A), the electronic device 5400 is placed on top of clothes 5401 located on the upper arm of the left arm. The clothing 5401 includes military uniforms, protective clothing, suits, uniforms, space suits, etc. There is no particular limit to how the device can be worn, but it can be worn on clothing that overlaps the upper arm. The method of sewing the garment on or attaching it to clothing that overlaps the upper arm with Velcro (registered trademark) A method of attaching the electronic device 5400 by providing a band or a clasp, a method of fixing the electronic device 5400 by a band or a clasp, One method is to wrap it around a leaf spring.

[0275] In addition, the electronic device 5400 has an antenna, and the electronic device 5400 is worn on the skin. FIG. 15B is a perspective view of the case where wireless charging is being performed. In FIG. The electronic device 5400 is attached to the skin 402. For surfaces that come into contact with the skin, it is preferable to use natural materials such as skin-friendly films, leather, paper, and cloth. Also, 5412 is a power transmission device, which transmits power to the electronic device 5400 using radio waves 5413. The electronic device 5400 can be charged wirelessly. By providing an antenna or circuitry that can transmit and receive information, other information can also be transmitted and received. For example, the electronic device 5400 can be used like a smartphone.

[0276] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments. can. [Explanation of symbols]

[0277] 10 Devices 11 CPU 12 Battery 13 Regulator 14 Radio receiver 15 Control Module 16 Display 17 Battery 18 Regulator 19 Display driver circuit 20 Radio receiving section 21 Display module 22 Communication Circuits 23 Battery 24 Regulator 25 Radio receiving unit 26 Communication Module 100 Battery 101 Insulating film 102 Positive electrode current collector layer 103 Positive electrode active material layer 104 Solid electrolyte layer 105 Negative electrode active material layer 106 Negative electrode current collector layer 107 Insulating film 108 Wiring 110 Insulating film 120 Battery 130 Battery 140 Battery 600 Transistors 640 Substrate 652 Insulating film 653 Gate insulating film 654 Insulating film 655 Insulating film 660 Oxide Semiconductors 661 Oxide Semiconductors 662 Oxide Semiconductors 663 Oxide Semiconductors 671 Source Electrode 672 Drain electrode 673 Gate electrode 674 Conductive Film 700 Substrates 701 Plug 702 Wiring 703 Plug 704 Plug 705 Wiring 706 Plug 707 Wiring 720 Transistor 721 Impurity region 722 Impurity region 723 Channel Area 724 Gate insulating film 725 Sidewall insulation layer 726 Gate electrode 727 Element Isolation Layer 730 Transistor 731 Insulating Film 732 Insulating film 740 Battery 741 Insulating film 742 Insulating film 750 Transistors 751 Impurity region 752 Impurity region 753 Channel Area 754 Gate insulating film 755 Sidewall insulation layer 756 Gate electrode 757 Insulating Film 761 Insulating film 762 Air Gap 763 Insulating Film 1000 Semiconductor device 1100 Semiconductor device 1200 Semiconductor device 1300 Semiconductor equipment 5000 cabinet 5001 Display section 5002 Display section 5003 Speaker 5004 LED Lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading unit 5012 Support part 5013 Earphones 5014 Antenna 5015 Shutter button 5016 Image receiving unit 5100 Electronic equipment 5101 Display section 5102 Display section 5103 Handle 5200 Electronic equipment 5201 sheets 5202 Display section 5203 Antenna installation section 5300 Pacemaker body 5301a Battery 5301b Battery 5302 Wire 5303 Wire 5304 Antenna 5305 Subclavian vein 5306 Superior vena cava 5400 Electronic equipment 5401 Clothes 5402 Upper Arm 5413 Radio waves

Claims

1. An exterior body having a flexible material and a device housed in the exterior body, the device includes a first transistor, a second transistor on the first transistor, and a secondary battery on the second transistor; the second transistor overlaps the first transistor; the secondary battery overlaps the first transistor and the second transistor; a channel region of the first transistor comprising silicon; a channel region of the second transistor includes an oxide semiconductor; The semiconductor device, wherein the secondary battery includes an all-solid-state battery.

2. An exterior body having a flexible material and a device housed in the exterior body, the device includes a first transistor, a secondary battery on the first transistor, and a plurality of second transistors on the secondary battery; one of the plurality of second transistors overlaps with the first transistor; one of the plurality of second transistors overlaps with the secondary battery; one of the plurality of second transistors overlapping the first transistor is different from one of the plurality of second transistors overlapping the secondary battery, the secondary battery does not overlap with the first transistor; a channel region of the first transistor comprising silicon; channel regions of the second transistors include an oxide semiconductor; having The semiconductor device, wherein the secondary battery includes an all-solid-state battery.

3. 3. The semiconductor device according to claim 1, wherein the device comprises a plurality of the secondary batteries.

Images