Transmission-Based Temperature Measurement of Workpieces in Heat Treatment Systems

Abstract

A thermal treatment system for performing a thermal treatment may include a workpiece support plate configured to support a workpiece and a heat source configured to heat the workpiece. The thermal treatment system may include a window having a transparent region that is transparent to electromagnetic radiation within a measurement wavelength range and an opaque region that is opaque to electromagnetic radiation within a portion of the measurement wavelength range. The temperature measurement system may include a plurality of infrared emitters configured to emit infrared radiation and a plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range, the transparent region being at least partially within a field of view of the infrared sensors. The controller may be configured to perform operations including obtaining transmittance and reflectance measurements associated with the workpiece and determining a temperature of the workpiece less than about 600°C based on the measurements.

Description

[Technical field]

[0001] Claiming priority This application claims the benefit of priority to U.S. Provisional Application No. 62 / 983,064, entitled “Transmission-Based Temperature Measurement of a Workpiece in a Thermal Processing System,” filed February 28, 2020, which is incorporated herein by reference.

[0002] Field SUMMARY The present disclosure relates generally to thermal processing systems, for example, thermal processing systems operable to perform thermal processing of a workpiece.

[0003] 2. Background of the Invention As used herein, a thermal processing chamber refers to a device that heats workpieces, such as semiconductor workpieces (e.g., semiconductor workpieces). Such a device may include a support plate for supporting one or more workpieces and an energy source for heating the workpieces, such as a heat lamp, laser, or other heat source. During thermal processing, the workpieces may be heated under controlled conditions according to a processing regime.

[0004] Many heat treatment processes require the workpiece to be heated over a range of temperatures to effect various chemical and physical transformations during processing of the workpiece into a device. For example, during rapid thermal processing, the workpiece may be heated by an array of lamps through a support plate to a temperature of about 300° C. to about 1200° C. for a duration that is typically less than a few minutes. During these processes, reliably and accurately measuring the temperature of the workpiece may be a primary goal.

[0005] Summary of the Invention Aspects and advantages of embodiments of the present disclosure will be set forth in part in the description that follows, or may be learned from the description, or may be learned through practice of the embodiments.

[0006] One exemplary aspect of the present disclosure relates to a thermal processing system for performing thermal processing of a semiconductor workpiece. The thermal processing system may include a workpiece support plate configured to support the workpiece. The thermal processing system may include one or more heat sources configured to heat the workpiece. The thermal processing system may include one or more windows disposed between the workpiece support plate and the one or more heat sources. The one or more windows may include one or more transparent regions that are transparent to at least a portion of the electromagnetic radiation in a measurement wavelength range and one or more opaque regions that are opaque to the electromagnetic radiation in a portion of the measurement wavelength range.

[0007] These and other features, aspects, and advantages of various embodiments will become better understood with reference to the following description and appended claims. The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain associated principles.

[0008] Detailed descriptions of embodiments directed to persons skilled in the art are set forth herein with reference to the accompanying drawings. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 illustrates an exemplary thermal processing system according to an exemplary aspect of the present disclosure. [Diagram 2] FIG. 1 illustrates an exemplary heat treatment system configured to measure the emissivity of a workpiece, according to an exemplary aspect of the present disclosure. [Diagram 3] FIG. 1 illustrates an exemplary thermal processing system configured to measure a temperature of a workpiece, according to an exemplary aspect of the present disclosure. [Figure 4] FIG. 1 illustrates an exemplary temperature measurement system according to an exemplary aspect of the present disclosure. [Figure 5A] FIG. 1 illustrates a permeability plot of an exemplary impermeable region material according to an exemplary aspect of the present disclosure. [Figure 5B]FIG. 2 illustrates a transmittance plot of an exemplary permeable region material according to an exemplary embodiment of the present disclosure. [Figure 6A] FIG. 1 illustrates a transmittance plot of an exemplary workpiece type according to an exemplary aspect of the present disclosure. [Figure 6B] FIG. 1 illustrates a transmittance plot of an exemplary normalized workpiece transmittance according to an exemplary aspect of the present disclosure. [Figure 7] FIG. 1 illustrates a method for measuring the temperature of a workpiece in a thermal processing system according to an exemplary embodiment of the present disclosure. [Figure 8] FIG. 1 illustrates a method for calibrating a reference intensity of a sensor in a thermal processing system according to an exemplary aspect of the present disclosure.

[0010] Detailed Description Reference will now be made in detail to the embodiments, one or more examples of which are illustrated in the drawings. Each example is provided by way of explanation of the embodiments, not by way of limitation of the disclosure. Indeed, it will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments without departing from the scope or spirit of the disclosure. For example, features illustrated or described as part of one embodiment can be used with another embodiment to yield a further embodiment. Accordingly, it is intended that aspects of the disclosure encompass such modifications and variations.

[0011] Exemplary aspects of the present disclosure are directed to thermal processing systems, such as rapid thermal processing (RTP) systems, for workpieces, such as semiconductor workpieces (e.g., silicon workpieces). In particular, exemplary aspects of the present disclosure are directed to obtaining temperature measurements indicative of a temperature of at least a portion of a workpiece within the thermal processing system. For example, the temperature measurements may be useful in monitoring the temperature of the workpiece while a thermal process is being performed on the workpiece.

[0012] Exemplary aspects of the present disclosure may be particularly useful in obtaining temperature measurements at workpiece temperatures where the workpiece is substantially transparent and / or does not emit significant blackbody radiation. In some cases, measuring workpiece temperatures near these temperatures may be difficult with conventional methods. In particular, some workpieces, such as non-metallized workpieces (e.g., lightly doped silicon workpieces), may be difficult to measure temperatures below about 600°C with conventional methods. For example, the workpiece may be substantially transparent to many wavelengths traditionally used for transmittance measurements at temperatures below about 600°C. Furthermore, the workpiece may be too cold to actually emit measurable blackbody radiation at conventional wavelengths.

[0013] Thus, exemplary embodiments of the present disclosure may enable accurate transmittance-based emissivity-compensated temperature measurements of a workpiece at low temperatures, such as below about 600°C, e.g., between about 400°C and 600°C. Additionally, sensors used in obtaining transmittance-based temperature measurements for workpiece temperatures below about 600°C may be reused and / or used to perform emission-based temperature measurements of the workpiece for workpiece temperatures above about 600°C where the workpiece is substantially opaque and / or emits significant blackbody radiation. Additionally, other process aspects, including measurement wavelengths and / or phase-locking of specific measurements, may be selected to minimize interference between various functions of a thermal processing system. This may enable systems and methods according to exemplary embodiments of the present disclosure to measure temperatures over an increased range, including temperatures below about 600°C, as compared to conventional systems and methods. Additionally, this may enable the systems and methods to smoothly transition from transmittance-based temperature measurements for temperatures where the workpiece does not emit substantially measurable blackbody radiation (e.g., below about 600° C.) to emission-based temperature measurements for temperatures where the workpiece does emit measurable radiation (e.g., above about 600° C.) without requiring additional sensors and / or sensor reconfiguration, because the same sensors used for transmittance-based temperature measurements can be used for emission-based temperature measurements once the workpiece is no longer at least partially transmissive.

[0014] According to an exemplary aspect of the present disclosure, a thermal processing system, such as a rapid thermal processing system, may include a workpiece support plate configured to support a workpiece. For example, the workpiece may be a workpiece, such as a substrate, to be processed by the thermal processing system. The workpiece may be or include any suitable workpiece, such as a semiconductor workpiece, such as a silicon workpiece. In some embodiments, the workpiece may be or include a lightly doped silicon workpiece. For example, the lightly doped silicon workpiece may be doped such that the resistivity of the silicon workpiece is greater than about 0.1 Ω cm, such as greater than about 1 Ω cm.

[0015] The workpiece support plate may be or include any suitable support structure configured to support a workpiece (e.g., support a workpiece in a thermal treatment chamber of a thermal treatment system). In some embodiments, the workpiece support plate may be configured to support multiple workpieces for simultaneous thermal treatment by a thermal treatment system. In some embodiments, the workpiece support plate may be or include a rotating workpiece support configured to rotate the workpiece while the workpiece is supported by the rotating workpiece support plate. In some embodiments, the workpiece support plate may be transparent and / or otherwise configured to allow at least some electromagnetic radiation to at least partially pass through the workpiece support plate. For example, in some embodiments, the material of the workpiece support plate may be selected to allow desired electromagnetic radiation to pass through the workpiece support plate, such as electromagnetic radiation emitted by the workpiece and / or emitter and / or measured by a sensor in the thermal treatment system. In some embodiments, the workpiece support plate may be made of or include a quartz material.

[0016] According to exemplary aspects of the present disclosure, a thermal processing system can include one or more heat sources (e.g., heat lamps) configured to heat a workpiece. For example, the one or more heat lamps can emit electromagnetic radiation (e.g., broadband electromagnetic radiation) to heat the workpiece. In some embodiments, the one or more heat lamps can be or include, for example, arc lamps, tungsten halogen lamps, and / or any other suitable heat lamps, and / or combinations thereof. In some embodiments, a directional element, such as, for example, a reflector (e.g., a mirror), can be configured to direct electromagnetic radiation from the one or more heat lamps to the workpiece and / or the workpiece support plate.

[0017] According to an exemplary aspect of the present disclosure, a thermal treatment system may include a temperature measurement system configured to measure a temperature of a workpiece in the thermal treatment system. For example, the temperature measurement system may include a plurality of radiation sensors (e.g., infrared sensors) configured to measure electromagnetic radiation at various points in the thermal treatment system (e.g., in the thermal treatment chamber). Additionally and / or alternatively, the temperature measurement system may include a plurality of radiation emitters (e.g., infrared emitters) configured to emit electromagnetic radiation into the thermal treatment system (e.g., the thermal treatment chamber) that passes through various components in the thermal treatment system, such as the workpiece, the chamber window, the workpiece support plate, and / or other suitable components. Based on the radiation emitted by the emitters and / or the radiation measured by the sensors, the temperature measurement system may determine (e.g., estimate) a temperature of the workpiece, as described in more detail below. For example, as one example of a transmittance-based temperature measurement, a transmittance determined for a portion of the workpiece may be compared to a transmittance curve, such as a normalized transmittance curve, to determine a temperature of the portion of the workpiece. As one example of an emission-based temperature measurement, the temperature T of the workpiece may be determined according to the following equation:

number

[0018] According to exemplary aspects of the present disclosure, a thermal processing system (e.g., a temperature measurement system) may include a plurality of infrared emitters. The infrared emitters may be configured to emit electromagnetic radiation at one or more infrared wavelengths (e.g., wavelengths between about 700 nanometers and about 1 millimeter). For example, the infrared emitters may emit infrared radiation directed at least partially to the workpiece. At least a portion of the infrared radiation directed to the workpiece may be transmitted through the workpiece. Additionally, at least a portion of the infrared radiation directed to the workpiece may be reflected by the workpiece. In some embodiments, the infrared emitters may be positioned outside the workpiece processing chamber. For example, an infrared emitter positioned outside the workpiece processing chamber may emit radiation such that the radiation first passes through a chamber sidewall (e.g., a chamber window) before passing through the workpiece. In some embodiments, the infrared emitters may be disposed in series with an array of heating elements (e.g., heat lamps). Additionally and / or alternatively, the infrared emitters may be disposed closer to and / or farther from the workpiece than the heat lamps.

[0019] According to an exemplary aspect of the present disclosure, the thermal processing system may include a plurality of infrared sensors. The infrared sensors may be configured to obtain measurements of electromagnetic radiation, such as electromagnetic radiation having infrared wavelengths, incident on the infrared sensors. In some embodiments, the infrared sensors may be or include pyrometers. In some embodiments, the pyrometers may be or include dual-head pyrometers including a first head configured to measure a first wavelength of infrared radiation and a second head configured to measure a second wavelength of infrared radiation. In some embodiments, the first wavelength and / or the second wavelength may be within a measurement wavelength range. In some embodiments, the first wavelength may be about 2.3 micrometers and / or the second wavelength may be about 2.7 micrometers.

[0020] According to an exemplary embodiment of the present disclosure, one or more windows (e.g., chamber windows) can be disposed between the workpiece and / or workpiece support plate and the one or more heat lamps. The one or more chamber windows can be configured to selectively block at least a portion of the electromagnetic radiation (e.g., broadband radiation) emitted by the one or more heat lamps from entering a portion of the thermal processing chamber (e.g., incident on the workpiece and / or workpiece support plate and / or one or more sensors). For example, the one or more chamber windows can include one or more opaque regions and / or one or more transmissive regions. As used herein, "opaque" generally means having a transmittance of less than about 0.4 (40%) for a given wavelength, and "transmissive" generally means having a transmittance of more than about 0.4 (40%) for a given wavelength.

[0021] The one or more opaque regions and / or the one or more transparent regions can be positioned such that the opaque regions block stray radiation of some wavelengths from the heat lamps, while the transparent regions allow, for example, the emitters and sensors to freely interact with radiation in the thermal treatment chamber at wavelengths blocked by the opaque regions. In this way, the window can effectively shield the emitters and sensors from contamination by the heat lamps, while still allowing the heat lamps to heat the workpiece. The one or more opaque regions and the one or more transparent regions can be generally defined as opaque and transparent, respectively, to certain wavelengths. That is, the opaque regions are opaque and the transparent regions are transparent to at least certain wavelengths of electromagnetic radiation. For example, in some embodiments, the transparent regions can be transparent to at least a portion of the electromagnetic radiation in a measurement wavelength range. In some embodiments, the opaque regions can be opaque to at least a portion of the electromagnetic radiation in a measurement range. The measurement range can be or include the wavelengths at which the intensity of the electromagnetic radiation is measured by at least one sensor in the thermal treatment system.

[0022] The one or more chamber windows including one or more opaque regions and / or one or more transparent regions can be formed of any suitable material and / or structure. In some embodiments, the one or more chamber windows can be made of or include a quartz material. Furthermore, in some embodiments, the one or more opaque regions can be or include a hydroxyl (OH)-containing quartz, such as hydroxyl-doped quartz (e.g., quartz doped with hydroxyl), and / or the one or more transparent regions can be or include a hydroxyl-free quartz (e.g., quartz not doped with hydroxyl). Advantages of hydroxyl-doped quartz and hydroxyl-free quartz include ease of manufacture. For example, hydroxyl-free quartz regions can be masked during hydroxyl doping of a monolithic quartz window to produce both hydroxyl-doped regions (e.g., opaque regions) and hydroxyl-free regions (e.g., transparent regions) within the monolithic window. In addition, hydroxyl-doped quartz can exhibit desirable wavelength blocking properties according to the present disclosure. For example, hydroxyl-doped quartz can block radiation having a wavelength of about 2.7 micrometers, which may correspond to the measurement wavelength at which some sensors in a thermal processing system operate, while hydroxyl-free quartz can be transparent to radiation having a wavelength of about 2.7 micrometers. Thus, the hydroxyl-doped quartz region can shield the sensor from stray radiation (e.g., from a heat lamp) in the thermal processing system, and the hydroxyl-free quartz region can be at least partially disposed within the field of view of the sensor (e.g., the region where the sensor is configured to measure infrared radiation) to enable the sensor to obtain measurements in the thermal processing system. In addition, the hydroxyl-doped quartz can be partially opaque (e.g., has a transmittance of about 0.6 or 60%) to radiation having a wavelength of about 2.3 micrometers, which can at least partially reduce contamination from stray radiation (e.g., from a heat lamp) in the thermal processing system.

[0023] The infrared radiation emitted by the infrared emitter and / or measured by the infrared sensor can have one or more associated wavelengths. For example, in some embodiments, the infrared emitter can be or include a narrowband infrared emitter that emits radiation such that the wavelength range of the emitted radiation is within a numerical tolerance, such as within 10% of the numerical value, where the emitter is referred to by the numerical value. In some embodiments, this can be achieved by a combination of a broadband emitter that emits a broadband spectrum (e.g., a Planck spectrum) and an optical filter, such as an optical notch filter, configured to pass only a narrow band within the broadband spectrum. Similarly, an infrared sensor can be configured to measure the intensity of infrared radiation of a narrowband of infrared at a numerical value (e.g., within a numerical tolerance). For example, in some embodiments, an infrared sensor, such as a pyrometer, can include one or more heads configured to measure (e.g., select for measurement) a particular narrowband wavelength.

[0024] In some embodiments, the infrared radiation emitted by the infrared emitter and / or measured by the infrared sensor may be in a measurement wavelength range, which may be or include a continuous and / or non-continuous range. The measurement wavelength range may be selected based on the characteristics of the workpiece and / or the workpiece processing system. For example, the measurement wavelength range may include wavelengths at which the workpiece and / or the transmissive regions in the one or more chamber windows are transmissive to temperatures below at least about 600° C. Additionally and / or alternatively, the measurement wavelength range may include wavelengths at which the opaque regions in the one or more chamber windows are opaque to temperatures below at least about 600° C. In this manner, the emitter may emit radiation that is substantially transmitted through the transmissive regions and is at least partially protected by the opaque regions from contamination by the heat lamps before it is incident on the sensor. In some embodiments, it may be desirable to exclude contamination by the heat lamps in the measurement wavelength range, but the measurement wavelength range may nevertheless include wavelengths that have contamination from the heat lamps (e.g., wavelengths that may at least partially pass through the opaque regions). Additionally and / or alternatively, the measurement wavelength range may include wavelengths at which the workpiece emits significant (e.g., measurable) blackbody radiation for temperatures greater than at least about 600° C. In some embodiments, the measurement wavelength range may include about 2.3 micrometers and / or about 2.7 micrometers. For example, in some embodiments, the one or more infrared sensors may be configured to measure the intensity of infrared radiation within the field of view of the sensor at about 2.3 micrometers. Similarly, the one or more infrared sensors may be configured to measure the intensity of infrared radiation within the field of view of the sensor at about 2.7 micrometers.

[0025] In some embodiments, the temperature measurement system may include an emissivity measurement system configured to measure (e.g., estimate) the emissivity of the workpiece. As an example of measuring the emissivity of the workpiece, the emissivity measurement system may include an infrared emitter configured to emit infrared radiation toward the workpiece. In some embodiments, the infrared emitter may emit infrared radiation directed toward a surface of the workpiece at an oblique angle (e.g., at an angle less than 90 degrees from the surface of the workpiece). In this manner, a transmitted portion of the emitted radiation may be transmitted through the workpiece and a reflected portion of the emitted radiation may be reflected at the surface of the workpiece. The angle of reflection of the reflected portion may be predicted and / or known based on the workpiece characteristics. An infrared sensor may be positioned to measure the transmitted portion and / or the reflected portion. Based at least in part on the first portion and / or the second portion, the emissivity measurement system may determine the emissivity of the workpiece. In some embodiments, the emissivity measurement system, such as an emitter and / or a sensor, may operate at a first wavelength in a measurement wavelength range. For example, the first wavelength can be a wavelength at which the transmissive regions of the chamber window are transmissive and / or the opaque regions are opaque, hi some embodiments, the first wavelength can be or include about 2.7 micrometers.

[0026] Additionally and / or alternatively, the thermal processing system (e.g., temperature measurement system) may include a transmittance measurement system. The transmittance measurement system may be configured to obtain one or more transmittance measurements of the workpiece. For example, in some embodiments, the transmittance measurement system may obtain a center transmittance measurement of a center portion of the workpiece (e.g., by a center sensor such as a center pyrometer) and an edge transmittance measurement of an edge portion of the workpiece (e.g., by an edge sensor such as an edge pyrometer). In some embodiments, the transmittance measurement system may include one or more infrared emitters configured to emit infrared radiation directed perpendicular to a surface of the workpiece. In addition, the transmittance measurement system may include one or more infrared sensors disposed opposite the one or more infrared emitters and configured to measure a portion of the infrared radiation emitted by the one or more infrared emitters and passing through the workpiece.

[0027] It may be possible to determine the temperature of the workpiece based on the transmittance of the workpiece. However, the transmittance of the workpiece is not only correlated with temperature. For example, workpiece properties such as bulk doping level, reflective properties of the workpiece surface, and workpiece thickness can all affect the transmittance. Thus, the temperature measurement system, in some embodiments, can determine a normalized transmittance measurement that correlates with the workpiece temperature. For example, the normalized transmittance measurement can range from 0 to 1, regardless of the workpiece properties.

[0028] Additionally and / or alternatively, the sensor measurements used to determine the transmittance of the workpiece may be affected by other components in the chamber, such as the workpiece support plate, the chamber window, and / or any other components, particularly those that need to pass the infrared radiation emitted by the emitter and measured by the sensor. According to an exemplary aspect of the present disclosure, the thermal processing system (e.g., the temperature measurement system) may determine a reference intensity, denoted herein as I0, for each of one or more sensors in the thermal processing system. The reference intensity may correspond to the radiation emitted by the emitter and / or the radiation incident on the sensor when no workpiece is present in the processing chamber. In other words, the reference intensity may be reduced from the intensity of the radiation emitted by the emitter only by contributions from components other than the workpiece in the thermal processing system. This may further correspond to the case of 100% transmittance through the workpiece. In some embodiments, the reference intensity may be measured before inserting the workpiece into the processing chamber, such as between thermal processing of two workpieces.

[0029] In some embodiments, the transmittance measurement system can operate at the same wavelength (e.g., the first wavelength) as the emissivity measurement system. Additionally and / or alternatively, the transmittance measurement system can operate at a second wavelength different from the first wavelength. For example, in some embodiments, the second wavelength can be a wavelength at which one or more opaque regions of the chamber window are opaque to the first wavelength but not to the second wavelength, such that radiation at the first wavelength is blocked by the opaque regions and radiation at the second wavelength can at least partially pass through the opaque regions. For example, the transmittance of the opaque regions at the second wavelength can be greater than the transmittance at the first wavelength. In some embodiments, the second wavelength can be 2.3 micrometers.

[0030] In some cases, it may be desirable and / or necessary to use a second wavelength for the transmittance measurement system that is not completely blocked by the chamber window. For example, spatial considerations, interference considerations, and / or other factors may make a thermal processing system at the first wavelength undesirable. As an example, an emissivity measurement system may include transmittance measurements used to determine emissivity that may be correlated to the temperature of the workpiece, but it may be desirable to obtain temperature measurements at multiple regions of the workpiece. For example, obtaining temperature measurements at multiple regions, such as a center portion and / or an edge portion, may allow for improved monitoring of process uniformity. However, additional sensors may be required to obtain temperature measurements across multiple regions. Furthermore, transmittance measurements may require placing the emitter opposite additional sensors, which in some cases may also require that a transmissive region be disposed within the field of view of the emitter for the transmittance measurement to work at the first wavelength. However, in some embodiments, these additional sensors may be used for emission measurements according to exemplary aspects of the present disclosure in addition to being used for transmittance measurements. These transparent regions may in some cases contribute to contamination from the heat lamps in measurements from the additional sensor, especially if the sensor is used for emissions measurements. Thus, one way to solve this problem is to configure the chamber with additional transparent regions, although other solutions may be employed, including phase locking the emissions and / or sensor measurements, as described in more detail below.

[0031] In some embodiments, the infrared emitters and / or the infrared sensors can be phase-locked. For example, in some embodiments, the radiation emitted by one or more emitters can be pulsed at a pulsed frequency. The pulsed frequency can be selected to be or include a frequency that has little or no radiative component in the thermal processing system. For example, in some embodiments, the pulsed frequency can be about 130 Hz. In some embodiments, a pulsed frequency of 130 Hz can be particularly advantageous because heat lamps do not substantially emit radiation having a frequency of 130 Hz. As an example of pulsing one or more emitters, a chopper wheel having one or more slits can be rotated within the field of view of one or more emitters such that a constant radiation flow from one or more emitters can intermittently pass through the chopper wheel at the pulsed frequency. Thus, the constant radiation flow can be converted into a pulsed radiation flow at the pulsed frequency by the rotation of the chopper wheel.

[0032] Additionally and / or alternatively, one or more sensors can be phase-locked based on the pulse frequency. For example, the transmittance measurement system can be configured to separate measurements from the sensor based on the pulse frequency. As an example, the transmittance measurement system can compare measurements at the pulse frequency to measurements at other than the pulse frequency, such as by subtracting a measurement immediately prior to the measurement made at the pulse frequency to separate the signal contribution from the component at the pulse frequency from the interfering components. In other words, sensor measurements that are not phase-locked to the pulse frequency (e.g., measurements taken at the same or higher frequency relative to the pulse frequency and / or measurements out of phase relative to the phase-locked measurements) can indicate only stray radiation in the chamber, and / or sensor measurements that are phase-locked to the pulse frequency can indicate the sum of stray radiation and radiation emitted from the emitter. Thus, the emitted radiation can be separated by subtracting a known amount of stray radiation from the non-phase-locked measurements. As an example, if the pulse frequency is 130 Hz, the sensor can take measurements at 260 Hz or higher, whereby one or more stray intensity measurements are associated with each phase-locked measurement. In this manner, the transmittance measurement system can reduce interference from stray radiation (eg, stray light) in measurements from the sensor.

[0033] Systems and methods according to exemplary embodiments of the present disclosure may provide several technical effects and advantages related to heat treatment of workpieces. As an example, systems and methods according to exemplary embodiments of the present disclosure may provide accurate temperature measurements at workpiece temperatures where the workpiece is substantially transparent and / or does not emit significant blackbody radiation. For example, systems and methods according to exemplary embodiments of the present disclosure may enable accurate temperature measurements below about 600° C., regardless of the composition of the workpiece.

[0034] Another technical effect of the present disclosure may be an improved range of temperature measurement. For example, systems according to exemplary embodiments of the present disclosure may enable accurate transmittance-based emissivity-compensated temperature measurements of a workpiece at low temperatures, such as below about 600°C, e.g., between about 400°C and 600°C. In addition, sensors used in obtaining transmittance-based temperature measurements for workpiece temperatures below about 600°C may be reused and / or used to perform emission-based temperature measurements of the workpiece for workpiece temperatures above about 600°C where the workpiece is substantially opaque and / or emits significant blackbody radiation. In addition, other process aspects, including measurement wavelengths and / or phase-locking of specific measurements, may be selected to minimize interference between various functions of a thermal processing system. This may enable systems and methods according to exemplary embodiments of the present disclosure to measure temperatures over an increased range, including temperatures below about 600°C, as compared to conventional systems and methods. Additionally, this may enable the systems and methods to smoothly transition from transmittance-based temperature measurements for temperatures where the workpiece does not emit substantially measurable blackbody radiation (e.g., below about 600° C.) to emission-based temperature measurements for temperatures where the workpiece does emit measurable radiation (e.g., above about 600° C.) without requiring additional sensors and / or sensor reconfiguration, since, for example, the same sensors used for transmittance-based temperature measurements can be used for emission-based temperature measurements once the workpiece is no longer at least partially transmissive.

[0035] Variations and modifications can be made to these exemplary embodiments of the present disclosure. As used herein, the singular forms "a," "an," and "the" include plural referents unless the context clearly indicates otherwise. The use of "first," "second," "third," etc., is used as an identifier and does not necessarily indicate an implied ordering or any other ordering. The exemplary embodiments may be described with reference to a "substrate," "workpiece," or "workpiece" for purposes of illustration and explanation. Those skilled in the art will understand, using the disclosure provided herein, that the exemplary embodiments of the present disclosure may be used with any suitable workpiece. It should be noted that "about" in relation to a numerical value means within 20% of the stated numerical value.

[0036] Exemplary embodiments of the present disclosure will now be described in detail with reference to the drawings. Figure 1 illustrates an exemplary rapid thermal processing (RTP) system 100 according to an exemplary embodiment of the present disclosure. As illustrated, the RTP system 100 includes an RTP chamber 105 including a top 101 and a bottom 102, windows 106, 108, a workpiece 110, a workpiece support plate 120, heat sources 130, 140 (e.g., heat lamps), infrared emitters 150, 152, 154, sensors 165, 166, 167, 168 (e.g., pyrometers such as dual head pyrometers), a controller 175, a sidewall / door 180, and a gas flow controller 185.

[0037] The workpiece 110 to be processed is supported in the RTP chamber 105 (e.g., a quartz RTP chamber) by a workpiece support plate 120. The workpiece support plate 120 may be a workpiece support operable to support the workpiece 110 during thermal processing. The workpiece 110 may be or include any suitable workpiece, such as a semiconductor workpiece, such as a silicon workpiece. In some embodiments, the workpiece 110 may be or include a lightly doped silicon workpiece. For example, the lightly doped silicon workpiece may be doped such that the resistivity of the silicon workpiece is greater than about 0.1 Ω cm, such as greater than about 1 Ω cm.

[0038] The workpiece support plate 120 may be or include any suitable support structure configured to support the workpiece 110, such as supporting the workpiece 110 in the RTP chamber 105. In some embodiments, the workpiece support plate 120 may be configured to support multiple workpieces 110 for simultaneous thermal processing by the thermal processing system. In some embodiments, the workpiece support plate 120 may rotate the workpiece 110 before, during, and / or after thermal processing. In some embodiments, the workpiece support plate 120 may be transparent and / or otherwise configured to allow at least some electromagnetic radiation to at least partially pass through the workpiece support plate 120. For example, in some embodiments, the material of the workpiece support plate 120 may be selected to allow desired electromagnetic radiation, such as electromagnetic radiation emitted by the workpiece 110 and / or emitters 150, 152, 154, to pass through the workpiece support plate 120. In some embodiments, the workpiece support plate 120 may be made of or include a quartz material, such as a hydroxyl-free quartz material.

[0039] The workpiece support plate 120 may include at least one support pin 115 extending therefrom. In some embodiments, the workpiece support plate 120 may be spaced apart from the top plate 116. In some embodiments, the support pin 115 and / or the workpiece support plate 120 may transfer heat from the heat source 140 and / or absorb heat from the workpiece 110. In some embodiments, the support pin 115, the guard ring 109, and the top plate 116 may be made of quartz.

[0040] A guard ring 109 may be used to reduce edge effects of radiation due to one or more edges of the workpiece 110. A sidewall / door 180 may allow entry of the workpiece 110 and, when closed, seal the chamber 105 so that thermal processing may be performed on the workpiece 110. For example, a process gas may be introduced into the RTP chamber 105. Two banks of heat sources 130, 140 (e.g., lamps or other suitable heat sources) operable to heat the workpiece 110 within the RTP chamber 105 are shown on either side of the workpiece 110. The windows 106, 108 may be configured to block at least a portion of the radiation emitted by the heat sources 130, 140, as described in more detail below.

[0041] The RTP system 100 may include heat sources 130, 140. In some embodiments, the heat sources 130, 140 may include one or more heat lamps. For example, the heat sources 130, 140 including one or more heat lamps may emit electromagnetic radiation (e.g., broadband electromagnetic radiation) to heat the workpiece 110. In some embodiments, for example, the heat sources 130, 140 may be or include arc lamps, tungsten halogen lamps, and / or any other suitable heat lamps, and / or combinations thereof. In some embodiments, a directional element (not shown), such as, for example, a reflector (e.g., a mirror), may be configured to direct the electromagnetic radiation from the heat sources 130, 140 into the RTP chamber 105.

[0042] According to an exemplary embodiment of the present disclosure, the windows 106, 108 can be disposed between the workpiece 110 and the heat sources 130, 140. The windows 106, 108 can be configured to selectively block at least a portion of the electromagnetic radiation (e.g., broadband radiation) emitted by the heat sources 130, 140 from entering portions of the rapid thermal processing chamber 105. For example, the windows 106, 108 can include an opaque region 160 and / or a transparent region 161. As used herein, "opaque" generally means having a transmittance of less than about 0.4 (40%) for a given wavelength, and "transparent" generally means having a transmittance of more than about 0.4 (40%) for a given wavelength.

[0043] The impermeable regions 160 and / or the transparent regions 161 can be positioned such that the impermeable regions 160 block stray radiation of some wavelengths from the heat sources 130, 140, and the transparent regions 161 allow, for example, the emitters 150, 152, 154 and / or the sensors 165, 166, 167, 168 to freely interact with radiation within the RTP chamber 105 at wavelengths blocked by the impermeable regions 160. In this manner, the windows 106, 108 can effectively shield the RTP chamber 105 from contamination by the heat sources 130, 140 at a given wavelength while still allowing the heat sources 130, 140 to heat the workpiece 110. The impermeable regions 160 and the transparent regions 161 can be generally defined as impermeable and transparent, respectively, to a particular wavelength. That is, opaque regions 160 are opaque and transparent regions 161 are transparent, at least to certain wavelengths of electromagnetic radiation.

[0044] The chamber window 106, 108, including the impermeable region 160 and / or the transmissive region 161, may be formed of any suitable material and / or structure. In some embodiments, the chamber window 106, 108 may be made of or include a quartz material. Furthermore, in some embodiments, the impermeable region 160 may be or include a hydroxyl (OH)-containing quartz, such as hydroxyl-doped quartz (e.g., quartz doped with hydroxyl), and / or the transmissive region 161 may be or include a hydroxyl-free quartz (e.g., quartz not doped with hydroxyl). Advantages of hydroxyl-doped quartz and hydroxyl-free quartz include ease of manufacture. For example, the hydroxyl-free quartz region may be masked during hydroxyl doping of a monolithic quartz window to produce both hydroxyl-doped regions (e.g., impermeable regions) and hydroxyl-free regions (e.g., transmissive regions) within the monolithic window. Additionally, the hydroxyl-doped quartz may exhibit desirable wavelength blocking properties in accordance with the present disclosure. For example, hydroxyl-doped quartz may block radiation having a wavelength of about 2.7 micrometers, which may correspond to measurement wavelengths at which some sensors (e.g., sensors 165, 166, 167, 168) in the thermal processing system 100 operate, while hydroxyl-free quartz may be transparent to radiation having a wavelength of about 2.7 micrometers. Thus, the hydroxyl-doped quartz regions may shield the sensors (e.g., sensors 165, 166, 167, 168) from stray radiation (e.g., from heat sources 130, 140) in the rapid thermal processing chamber 105, while the hydroxyl-free quartz regions may be at least partially disposed within the field of view of the sensors to enable the sensors to take measurements within the thermal processing system. Additionally, hydroxyl-doped quartz can be partially opaque (e.g., having a transmittance of about 0.6 or 60%) to radiation having a wavelength of about 2.3 micrometers, which can at least partially reduce contamination from stray radiation (e.g., from heat sources 130, 140) in the rapid thermal processing system 100.

[0045] A gas controller 185 can control the flow of gas through the RTP system 100, which can include an inert gas that does not react with the workpiece 110 and / or a reactive gas, such as oxygen or nitrogen, that reacts with a material of the workpiece 110 (such as a semiconductor workpiece) to form a layer on the workpiece 110. In some embodiments, an electric current can be passed through the atmosphere in the RTP system 100 to generate ions that react with the surface of the workpiece 110 and impart excess energy to the surface by bombarding the surface with high-energy ions.

[0046] The controller 175 controls various components within the RTP chamber to direct the thermal treatment of the workpiece 110. For example, the controller 175 can be used to control the heat sources 130 and 140. Additionally and / or alternatively, the controller 175 can be used to control the gas flow controller 185, the door 180, and / or a temperature measurement system including, for example, the emitters 150, 152, 154 and / or the sensors 165, 166, 167, 168. The controller 175 can be configured to measure the temperature of the workpiece, which will be described in more detail with respect to the following figures. For example, FIG. 2 illustrates a thermal treatment system 200 including one or more components of the thermal treatment system 100, which is configured to perform an in-situ emissivity determination of the workpiece. FIG. 3 illustrates at least a thermal treatment system 300 including one or more components of the thermal treatment system 100, which is configured to perform a transmittance-based and / or emission-based temperature measurement of the workpiece. Similarly, FIG. 4 illustrates a temperature measurement system 400 including one or more components of the thermal processing system 100, configured to perform transmittance-based and / or emission-based temperature measurements of a workpiece.

[0047] As used herein, a controller, control system, or the like may include one or more processors and one or more memory devices. The one or more processors may be configured to execute computer readable instructions stored in the one or more memory devices to perform operations, such as any of the operations for controlling a thermal processing system described herein.

[0048] 1 illustrates, for purposes of illustration and explanation, an exemplary thermal processing system 100. Those skilled in the art will understand, using the disclosure provided herein, that aspects of the present disclosure may be used with other thermal processing systems for workpieces without departing from the scope of the present disclosure.

[0049] FIG. 2 illustrates an exemplary thermal processing system 200 for illustration and explanation. In particular, the thermal processing system includes one or more components as described with respect to the thermal processing system 100 of FIG. 1. In particular, FIG. 2 illustrates at least components useful for determining an in-situ emissivity measurement of the workpiece 110, including at least an emitter 150 and sensors 165 and 166. As shown in FIG. 2, the emitter 150 can be configured to emit infrared radiation directed at an oblique angle to the workpiece 110. A transmitted portion of the emitted radiation emitted by the emitter 150 is transmitted through the workpiece 110 and incident on a transmittance sensor 165. A reflected portion of the emitted radiation emitted by the emitter 150 is reflected by the workpiece 110 and incident on a reflectance sensor 166. The emissivity of the workpiece can be determined by the transmitted and emitted portions. For example, the transmittance of the workpiece 110 can be represented by the intensity of the radiation incident on the transmittance sensor 165. Additionally, the reflectance of the workpiece 110 can be represented by the intensity of radiation incident on the reflectance sensor 166. From the transmittance and reflectance, the transmittance τ and reflectance ρ can be determined as the ratios of the transmittance and reflectance, respectively, to a reference intensity I0, which may represent the intensity at the sensors 165, 166 when the workpiece is not present in the thermal processing system 200. Thus, the emissivity ε can be calculated as: ε=1-(ρ+τ) It can be calculated as follows:

[0050] According to exemplary aspects of the present disclosure, one or more transparent regions 161 can be disposed at least partially within the field of view of the emitter 150 and / or the sensors 165, 166. For example, the emitter 150 and / or the sensors 165, 166 can operate at a measurement wavelength range that is transmitted by the transparent region 161. For example, in some embodiments, the emitter 150 and / or the sensors 165, 166 can operate at 2.7 micrometers. As shown in FIG. 2, the transparent region 161 can be positioned such that a flow of radiation (generally indicated by arrows) can flow from the emitter 150 through the transparent region 161 to the sensors 165, 166 without being impeded by the windows 106, 108 (e.g., the non-transparent region 160). Similarly, opaque regions 160 may be disposed in areas on the windows 106, 108 outside the radiation stream to shield the workpiece 110, and particularly the sensors 165, 166, from radiation in the measurement wavelength range from the heat sources 130, 140. For example, in some embodiments, a transmissive region 161 may be included for sensors and / or emitters operating at a wavelength of 2.7 micrometers.

[0051] In some embodiments, the emitter 150 and / or the sensor 165, 166 can be phase-locked. For example, in some embodiments, the emitter 150 and / or the sensor 165, 166 can be operated according to a phase-locked regime. For example, the opaque region 160 can be configured to block most stray radiation from the heat source 130, 140 at the first wavelength, but in some cases, stray radiation may still be sensed by the sensor 165, 166, as described above. Operating the emitter 150 and / or the sensor 165, 166 according to a phase-locked regime can help improve accuracy in intensity measurements despite the presence of stray radiation.

[0052] For example, in some embodiments, the radiation emitted by the emitter 150 can be pulsed at a pulse frequency. The pulse frequency can be selected to be or include a frequency that has little or no radiation component in the thermal treatment system 200. For example, in some embodiments, the pulse frequency can be about 130 Hz. In some embodiments, a pulse frequency of 130 Hz can be particularly advantageous because the heat sources 130, 140 do not substantially emit radiation having a frequency of 130 Hz. Additionally and / or alternatively, the sensors 165, 166 can be phase locked based on the pulse frequency. For example, the thermal treatment system 200 (e.g., a controller such as the controller 175 of FIG. 1) can separate measurements (e.g., intensity measurements) from the sensors 165, 166 based on the pulse frequency. In this manner, the thermal treatment system 200 can reduce interference from stray radiation in measurements from the sensors 165, 166.

[0053] An exemplary phase locking regime is described with respect to plots 250, 255, and 260. Plot 250 shows the phase locking regime of radiation I emitted by emitter 150 within a measured wavelength range. IR 2 shows the radiation intensity over time (e.g., over the duration of a thermal process performed on the workpiece 110). As shown in plot 250, the radiation intensity emitted by the emitter 150 may be emitted as pulses 251. For example, the emitter 150 may be pulsed by a chopper wheel (not shown). The chopper wheel may include one or more blocking portions and / or one or more passing portions. The chopper wheel may be rotated within the field of view of the emitter 150 such that a constant flow of radiation from the emitter 150 is intermittently blocked by the blocking portions and passed through the passing portions at a pulsed frequency. Thus, the constant flow of radiation emitted by the emitter 150 may be converted into a pulsed flow of radiation at a pulsed frequency by the rotation of the chopper wheel.

[0054] Plot 255 is the transmitted radiant intensity I measured by the transmittance sensor 165. TSimilarly, plot 260 shows the reflected radiation intensity I measured by the reflectance sensor 166 over time. R 10 shows the stray radiation in the chamber (represented by stray radiation curves 256 and 261, respectively) over time. Plots 255 and 260 show that over time (e.g., as the temperature of the workpiece 110 increases), stray radiation in the chamber (represented by stray radiation curves 256 and 261, respectively) can increase. This can be due, for example, to a decrease in the transparency of the workpiece 110 and / or an increase in the emissions of the workpiece 110 relative to an increase in the temperature of the workpiece 110, an increase in the strength of the heat sources 130, 140, and / or various other factors related to the thermal processing of the workpiece 110.

[0055] During times when emitter 150 is not emitting radiation, sensors 165, 166 can take measurements (e.g., stray radiation measurements) corresponding to stray radiation curves 256, 261, respectively. Similarly, during times when emitter 150 is emitting radiation (e.g., pulse 251), sensors 165, 166 can take measurements (e.g., total radiation measurements) corresponding to total radiation curves 257, 262, respectively. Thus, the transmitted radiation intensity I T can be determined based at least in part on the difference between a timed (e.g., subsequent) total radiation measurement (e.g., representing curve 257) and a stray radiation measurement (e.g., representing curve 256). Further, the transmittance τ is the ratio of the transmitted radiation intensity I T Similarly, the reflected radiation intensity I R can be determined based at least in part on the difference between a timed (e.g., subsequent) total radiation measurement (e.g., representing curve 262) and a stray radiation measurement (e.g., representing curve 261). Further, the reflectance ρ is the ratio of the reflected radiation intensity I RIn some embodiments, the reference intensity I0 can be measured by the sensors 165, 166 as a result of pulsed and / or constant emission from the emitter 150 when the workpiece 110 is not present in the thermal processing system 200. From the transmittance τ and reflectance ρ, the emissivity ε can be calculated as: ε=1-(ρ+τ) It can be calculated by:

[0056] FIG. 3 illustrates an exemplary thermal treatment system 300 according to an exemplary embodiment of the present disclosure. The thermal treatment system 300 can be configured to perform a thermal treatment on the workpiece 110 and / or measure the temperature of the workpiece 110. In particular, the thermal treatment system can include one or more components as described with respect to the thermal treatment system 100 of FIG. 1. In particular, FIG. 3 illustrates at least components useful for determining a transmittance-based and / or emission-based temperature measurement of the workpiece 110, including at least a central emitter 152 and a central sensor 167. In some embodiments, the edge emitter 154 and / or edge sensor 168 can operate similarly to the central emitter 152 and / or central sensor 154 on an edge portion of the workpiece 110 as described with respect to FIG. 3, but are not shown in FIG. 3 for illustrative purposes. This is further described below with respect to FIG. 4.

[0057] As shown in FIG. 3, the central emitter 152 can be configured to emit infrared radiation directed orthogonally to the surface of the workpiece 110, as indicated by the arrow in FIG. 3. A transmitted portion of the radiation emitted by the central emitter 152 is transmitted through the workpiece 110 and incident on the central sensor 167. In some embodiments, the transmissive regions 161 of the windows 106, 108 can be disposed within the field of view of the central emitter 152 and / or the sensor 167. For example, the central emitter 152 and / or the central sensor 167 can operate at a measurement wavelength range in which the transmissive regions 161 are transmissive. For example, in some embodiments, the central emitter 152 and / or the central sensor 167 can operate at 2.7 micrometers. 3, the transmissive region 161 may be positioned such that the radiation flow (approximately indicated by the arrows) can flow from the central emitter 152 through the transmissive region 161 to the central sensor 167 without being impeded by the windows 106, 108 (e.g., the impermeable region 160). Similarly, the impermeable region 160 may be disposed in an area on the windows 106, 108 outside of the radiation flow to shield the workpiece 110, and particularly the central sensor 167, from radiation in the measurement wavelength range from the heat sources 130, 140. For example, in some embodiments, the transmissive region 161 may be included for sensors and / or emitters operating at a wavelength of 2.7 micrometers.

[0058] However, in some embodiments, the inclusion of the transmissive region 161 in the window 106 disposed within the field of view of the central emitter 152 may undesirably allow radiation emitted by the heat source 130 to contaminate measurements by the central sensor 167 and / or other sensors (not shown) in the thermal processing system 300. For example, in some embodiments, the central sensor 167 may be further configured to measure thermal radiation emitted by the workpiece 110 in a measurement wavelength range through which the transmissive region 161 is transmissive. If the transmissive region 161 is disposed within the field of view of the central emitter 152, radiation emitted by the heat source 130 may increase the risk of contaminating this workpiece emission measurement.

[0059] One solution to this problem is to omit the transmissive region 161 in the field of view of the central emitter 152 and include an opaque region 160 instead. In addition, the central emitter 152 and / or the central sensor 167 can be operated at a second wavelength within the measurement wavelength range for which the opaque region 160 is at least partially transmissive. For example, in some embodiments, the second wavelength can be 2.3 micrometers. In this manner, despite the presence of the opaque region 160, radiation emitted by the central emitter 152 can pass through the windows 106 and 108 and be measurable by the central sensor 167 without the need to include a potentially contaminating transmissive region. Furthermore, due to the inclusion of the opaque region 160, measurements (e.g., emitted radiation measurements) from the central sensor 167 indicative of the intensity of the emitted radiation emitted by the workpiece 110 (at temperatures at which the workpiece 110 emits radiation, e.g., above about 600° C.) are not contaminated by stray radiation. However, the above-mentioned solution can create new problems. Radiation at the second wavelength from the central emitter 152 can pass through the impermeable areas 160, such that stray radiation at the second wavelength from, for example, the heat sources 130, 140 can also pass through.

[0060] Thus, in some embodiments, the central emitter 152 and / or the central sensor 167 are phase-lockable. In some embodiments, the central emitter 152 and / or the central sensor 167 can be operated according to a phase-locked regime. For example, the opaque region 160 can be configured to block most of the stray radiation of a first wavelength from the heat sources 130, 140, but in some cases stray radiation, particularly stray radiation of a second wavelength, may still be sensed by the central sensor 167 as described above. Operating the central emitter 152 and / or the central sensor 167 according to a phase-locked regime can contribute to improving the accuracy of the intensity measurement despite the presence of stray radiation.

[0061] For example, in some embodiments, the radiation emitted by the central emitter 152 can be pulsed at a pulse frequency. The pulse frequency can be selected to be or include a frequency that has little or no radiation component in the thermal treatment system 300. For example, in some embodiments, the pulse frequency can be about 130 Hz. In some embodiments, a pulse frequency of 130 Hz can be particularly advantageous because the heat sources 130, 140 do not substantially emit radiation having a frequency of 130 Hz. Additionally and / or alternatively, the central sensor 167 can be phase locked based on the pulse frequency. For example, the thermal treatment system 300 (e.g., a controller such as the controller 175 of FIG. 1) can separate measurements (e.g., intensity measurements) from the central sensor 167 based on the pulse frequency. In this manner, the thermal treatment system 300 can reduce interference from stray radiation in measurements from the central sensor 167.

[0062] An exemplary phase-locking regime is described with respect to plots 310 and 320. Plot 310 shows the phase-locking regime of the radiation I emitted by the central emitter 152 within the measured wavelength range. IR Plot 320 shows the transmitted radiation intensity I measured by the central sensor 167 over time (e.g., over the duration of a thermal process performed on the workpiece 110). T 3 shows a plot 310 of the central emitter 152 over time. As shown in plot 310, the radiation intensity emitted by the central emitter 152 may be emitted as pulses 311. For example, the central emitter 152 may be pulsed by a chopper wheel 302. The chopper wheel 302 may include one or more blocking portions 305 and / or one or more passing portions 306. The chopper wheel 302 may be rotated within the field of view of the central emitter 152 such that a constant flow of radiation from the central emitter 152 is intermittently blocked by the blocking portions 305 and passed through the passing portions 306 at a pulsed frequency. Thus, the constant flow of radiation emitted by the central emitter 152 may be converted into a pulsed flow of radiation at a pulsed frequency by the rotation of the chopper wheel 302.

[0063] During times when the central emitter 152 is not emitting radiation, the central sensor 167 can take measurements (e.g., stray radiation measurements) corresponding to the stray radiation curve 312. Similarly, during times when the central emitter 152 is emitting radiation (e.g., pulse 311), the central sensor 167 can take measurements (e.g., total radiation measurements) corresponding to the total radiation curve 313. Thus, the transmitted radiation intensity I T can be determined based at least in part on the difference between a timed (e.g., subsequent) total radiation measurement (e.g., representing curve 313) and a stray radiation measurement (e.g., representing curve 312). Further, the transmittance τ is the ratio of the transmitted radiation intensity I T For example, the reference intensity I0 may be measured by the central sensor 167 as a result of pulsed and / or constant emission from the central emitter 152 when the workpiece 110 is not present in the thermal processing system 300. The transmittance τ may be compared to a transmittance curve (e.g., the workpiece transmittance curves 602, 604, 606 of FIG. 6A and / or the normalized workpiece transmittance curve 652 of FIG. 6B for a particular workpiece composition) to determine the temperature of the workpiece.

[0064] Plot 320 illustrates that over time (e.g., as the temperature of the workpiece 110 increases), stray radiation in the chamber (as shown by stray radiation curve 312) may increase. This may be due to, for example, a decrease in the transmittance of the workpiece 110 and / or an increase in the emissions of the workpiece 110 as the temperature of the workpiece 110 increases, as the strength of the heat sources 130, 140 increases, and / or various other factors associated with the thermal processing of the workpiece 110. For example, as seen in plot 320, stray radiation curve 312 and total radiation curve 313 tend to converge over time (e.g., as the temperature increases). This may be a result of, for example, a decrease in the transmittance of the workpiece 110 as the temperature increases. Thus, in some cases (e.g., for silicon workpieces), transmittance-based temperature measurements such as those described above may become unreliable above a certain temperature (e.g., about 600° C.). Thus, according to an exemplary aspect of the present disclosure, a thermal processing system (e.g., any of the thermal processing systems 100, 200, 300) may transition from a first temperature measurement process (e.g., a transmittance-based temperature measurement process) to a second temperature measurement process (e.g., an emission-based temperature measurement process) at a temperature threshold. For example, the temperature threshold may be approximately 600° C. The temperature threshold may correspond to a workpiece temperature at which the workpiece 110 exhibits substantial blackbody radiation at wavelengths that may be detected by the central sensor 167. Additionally and / or alternatively, the temperature threshold may correspond to a workpiece temperature at which the workpiece 110 is opaque to radiation emitted by the central emitter 152. For example, in some embodiments, the temperature threshold may correspond to a point at which the stray radiation curve 312 and the total radiation curve 313 converge, or in other words, the transmitted radiation intensity I T This may correspond to the point where the magnitude of is less than a magnitude threshold.

[0065] For example, in some embodiments, the central sensor 167 can be configured to measure radiation emitted by the workpiece 110 in a measurement wavelength range. For example, in some embodiments, the central sensor 167 can be a dual head pyrometer having a first head configured to measure a first wavelength in the measurement wavelength range. In embodiments in which the opaque region 160 comprises hydroxyl-doped quartz, the first wavelength can be or include a wavelength at which the transmissive region 161 is transmissive and / or the opaque region 160 is opaque, such as, for example, 2.7 micrometers. The first wavelength can further correspond to a wavelength of blackbody radiation emitted by the workpiece 110. Additionally, the central sensor 167 can have a second head configured to measure a second wavelength in the measurement wavelength range. In embodiments in which the opaque region 160 comprises hydroxyl-doped quartz, the second wavelength can be or include a wavelength at which the opaque region 160 is not opaque, such as, for example, 2.3 micrometers. The second wavelength may also correspond to the wavelength emitted by the central emitter 152 .

[0066] Thus, according to an exemplary embodiment of the present disclosure, the central sensor 167 may obtain transmittance measurements related to the transmittance of the workpiece 110 for temperatures of the workpiece 110 below the temperature threshold, and may additionally obtain emission measurements related to the intensity of blackbody radiation emitted by the workpiece 110 for temperatures above the temperature threshold. Thus, the temperature of the workpiece 110 may be determined by transmittance measurements at temperatures below the temperature threshold, as described above. Additionally and / or alternatively, the temperature of the workpiece 110 may be determined by emission measurements at temperatures above the temperature threshold. For example, the temperature of the workpiece may be determined by the following equation:

number

[0067] 4 illustrates an exemplary temperature measurement system 400 according to an exemplary embodiment of the present disclosure. The temperature measurement system 400 can be configured to measure the temperature of a workpiece 110, which can be at least partially supported by a support ring 109. The temperature measurement system 400 can include a central emitter 152 and an edge emitter 154. In addition, the temperature measurement system 400 can include a central sensor 167 and an edge sensor 168. The emitters 152, 154 and / or sensors 167, 168 can operate as described with respect to the central emitter 152 and / or central sensor 167 of FIG. 3. For example, the central emitter 152 and central sensor 167 can be arranged such that radiation emitted by the central emitter 152 passes through a central portion 111 of the workpiece 110 and then is incident on the central sensor 167. Similarly, the edge emitter 154 and the edge sensor 168 can be arranged such that radiation emitted by the edge emitter 154 passes through the edge portion 112 of the workpiece 110 and is incident on the edge sensor 168. In this manner, the central sensor 167 can be configured to obtain a temperature measurement of the central portion 111 and / or the edge sensor 168 can be configured to obtain a temperature measurement of the edge portion 112. In some embodiments, the central portion 111 can include a portion of the workpiece defined by less than about 50% of the radius r of the workpiece, e.g., about 10% of the radius r. In some embodiments, the edge portion can include a portion of the workpiece defined by more than about 50% of the radius r of the workpiece, e.g., about 90% of the radius r.

[0068] FIG. 5A illustrates a plot 500 of an example transmittance curve 502 for an example material that constitutes an example opaque region. For example, the transmittance curve 502 is illustrated for an example material such as hydroxyl-doped quartz. As illustrated in FIG. 5A, the example opaque region can be substantially opaque to some wavelengths and substantially transparent to other wavelengths. In particular, the example transmittance curve 502 includes an opaque range 504 and a partial opaque range 506. As described herein, the measurement wavelength range can advantageously include wavelengths within the opaque range 504 and / or the partial opaque range 506. For example, radiation within the opaque range 504 and / or the partial opaque range 506 can be at least partially blocked by the example opaque region. This can prevent radiation emitted by a heat lamp from entering the thermal treatment chamber and contaminating measurements of a sensor configured to measure the opaque range 504 and / or the partial opaque range 506.

[0069] 5B shows a plot 520 of an example transmittance curve 522 for an example material that constitutes an example transmissive region. For example, a transmittance curve 522 is shown for an example material such as hydroxyl-free quartz. As shown in FIG. 5B, the example transmissive region can be substantially transmissive over some wavelengths. Although the example transmittance curve 522 is shown as being substantially transmissive over most wavelengths, the example transmissive region can further include an opaque range. In general, it is desirable for the example transmissive region to be transmissive in the measurement range (e.g., at wavelengths corresponding to the opaque range 504 and / or the partially opaque range 506 of FIG. 5A).

[0070] FIG. 6A shows a plot 600 of exemplary transmittance curves 602, 604, 606 for three exemplary workpiece types. For example, curve 602 is associated with a workpiece having a lower reflectance, curve 604 is associated with a workpiece having a medium reflectance (e.g., a bare workpiece), and curve 606 is associated with a workpiece having a higher reflectance. As shown in FIG. 6A, each of the curves 602, 604, 606 follows a general trend, but the transmittance value for each workpiece may vary based on the surface characteristics (e.g., reflectance) of the workpiece. As such, FIG. 6B shows a plot 650 of an exemplary normalized or nominal workpiece transmittance curve 652. As shown in FIG. 6B, the normalized workpiece transmittance curve 652 represents a transmittance from a maximum of 1 to a minimum of 0 for a particular workpiece, but is independent of the particular transmittance value of the workpiece. In other words, the normalized workpiece transmittance curve 652 may be similar and / or the same for each of a low reflective workpiece, a bare workpiece, and / or a highly reflective workpiece. Thus, normalized transmittance measurements obtained for a workpiece may be compared to the normalized workpiece transmittance curve 652, such that the transmittance may be directly correlated to temperature, regardless of the surface properties of the workpiece.

[0071] FIG. 7 illustrates a flow chart of an exemplary method 700 for measuring the temperature of a workpiece in a thermal processing system, such as the thermal processing systems 100, 200, or 300 of FIGS. 1-3. FIG. 7 illustrates steps that are performed in a particular order for purposes of illustration and explanation. Those skilled in the art will appreciate, using the disclosure provided herein, that various steps of any of the methods described herein may be omitted, expanded, performed simultaneously, rearranged, and / or modified in various ways without departing from the scope of the present disclosure. Additionally, various additional steps (not shown) may be performed without departing from the scope of the present disclosure.

[0072] The method 700 may include emitting infrared radiation directed toward one or more surfaces of the workpiece with one or more infrared emitters, at 702. For example, in some embodiments, one or more infrared emitters may emit radiation having a first wavelength and one or more infrared emitters may emit radiation having a second wavelength.

[0073] Method 700 may include blocking, with one or more windows, at least a portion of broadband radiation emitted by one or more heat lamps configured to heat the workpiece from impinging on one or more infrared sensors, at 704. For example, in some embodiments, the one or more windows may block at least a portion of the broadband radiation within at least a portion of the measurement range.

[0074] The method 700 may include, at 706, measuring, by one or more infrared sensors, a transmitted portion of the infrared radiation emitted by at least one of the one or more infrared emitters and passing through one or more surfaces of the workpiece. For example, a first portion of the transmitted portion may be incident on a first transmittance sensor to obtain a first transmittance measurement. The first transmitted portion may correspond to an emitter and / or a sensor of an emissivity measurement system. The first transmitted portion, in some embodiments, may have an associated first wavelength. Additionally and / or alternatively, a second portion of the transmitted portion may be incident on at least one second transmittance sensor to obtain at least one second transmittance measurement. In some embodiments, the at least one second transmittance sensor may be further configured to measure radiation emitted by the workpiece. In some embodiments, the second transmitted portion may have an associated second wavelength. In some embodiments, the first wavelength may be blocked by one or more windows and / or the second wavelength may be at least partially passed by one or more windows. For example, in some embodiments, the first transparent portion is associated with a first wavelength in the measurement wavelength range and the second transparent portion is associated with a second wavelength in the measurement wavelength range, and the one or more windows block radiation at the first wavelength and transmit radiation at the second wavelength.

[0075] The method 700 may include measuring, at 708, with one or more infrared sensors a reflected portion of the infrared radiation emitted by at least one of the one or more infrared emitters and reflected off one or more surfaces of the workpiece. For example, the reflected portion may be incident on a reflectance sensor to obtain a reflectance measurement. In some embodiments, the reflectance sensor may be part of an emissivity measurement system.

[0076] In some embodiments, measuring a portion (e.g., a transmitted portion and / or a reflected portion) of the infrared radiation emitted by at least one of the one or more infrared emitters with one or more infrared sensors may include phase-locking the one or more infrared sensors and / or the one or more infrared emitters. For example, phase-locking the one or more infrared sensors and / or the one or more infrared emitters may include pulsing at least one of the one or more infrared emitters at a pulsed frequency. As an example of pulsing the one or more emitters, a chopper wheel having one or more slits may be rotated within the field of view of the one or more emitters such that a constant stream of radiation from the one or more emitters can be intermittently passed through the chopper wheel at the pulsed frequency. Thus, the constant stream of radiation can be converted into a pulsed stream of radiation at the pulsed frequency by the rotation of the chopper wheel.

[0077] Additionally and / or alternatively, phase-locking one or more infrared sensors and / or one or more infrared emitters may include isolating at least one measurement from one or more infrared sensors based at least in part on the pulse frequency. As an example, measurements from one or more infrared sensors that are at the pulse frequency and / or in phase with the pulse frequency (e.g., measurements indicative of the intensity of radiation incident on the one or more infrared sensors) can be compared to measurements that are not at the pulse frequency and / or out of phase with the pulse frequency, such as by subtracting a subsequent measurement at twice the pulse frequency. Thus, signal contributions from components of the pulse frequency (e.g., emitters) can be separated from interference components (e.g., stray radiation from a heat lamp, etc.). In other words, sensor measurements that are not phase-locked to the pulse frequency (e.g., measurements taken at the same or higher frequency as the pulse frequency and / or measurements out of phase with respect to the phase-locked measurements) can indicate only stray radiation in the chamber, and / or sensor measurements that are phase-locked to the pulse frequency can indicate the sum of stray radiation and radiation emitted from the emitter. Thus, measurements indicative of the emitted radiation emitted by the emitter can be separated by subtracting the amount of stray radiation indicated by the non-phase-locked measurements. As an example, if the pulse frequency is 130 Hz, the sensor can take measurements at 260 Hz or higher, such that one or more stray intensity measurements correspond to each phase-locked measurement. In this manner, the thermal processing system can reduce interference from stray radiation (e.g., stray light) in measurements from the sensor.

[0078] The method 700 may include, at 710, determining a temperature of the workpiece based at least in part on the transmitted and reflected portions. The temperature of the workpiece at 710 may be less than about 600° C. For example, in some embodiments, determining the temperature of the workpiece may include determining an emissivity of the workpiece based at least in part on the transmitted and reflected portions, and determining the temperature of the workpiece based at least in part on the transmitted portion and the emissivity of the workpiece. For example, in some embodiments, the emissivity of the workpiece may be determined based at least in part on the first transmittance measurement and the reflectance measurement.

[0079] Method 700 may include, at 712, measuring with one or more infrared sensors emitted radiation measurements indicative of infrared radiation emitted by the workpiece. For example, the emitted radiation measurements may indicate an intensity of infrared radiation emitted by the workpiece and incident on the one or more sensors. According to exemplary aspects of the present disclosure, emitted radiation measurements may be obtained when the temperature of the workpiece becomes high enough that the workpiece is no longer transparent to infrared radiation from the emitter and / or begins to emit significant blackbody radiation at wavelengths configured to be measured by the one or more infrared sensors (e.g., within at least a portion of a measurement wavelength range).

[0080] In some embodiments, the emitted radiation measurements may correspond to wavelengths of infrared radiation blocked by one or more windows. For example, the emitted radiation measurements may correspond to wavelengths that are and / or are included within a portion of a measurement wavelength range. For example, in some embodiments, the emitted radiation measurements may correspond to the intensity of infrared radiation having a wavelength of 2.7 micrometers.

[0081] The method 700 may include determining a temperature of the workpiece based at least in part on the emitted radiation measurements, at 714. The temperature of the workpiece, at 714, may be greater than about 600° C. For example, determining a temperature of the workpiece greater than about 600° C. may include comparing the emitted radiation measurements to a blackbody radiation curve associated with the workpiece. The blackbody radiation curve may correlate the intensity of emitted blackbody radiation to temperature, such that a temperature may be determined based on a measured intensity (e.g., the emitted radiation measurements).

[0082] A system implementing method 700 can increase the temperature range over which the temperature of the workpiece may be measured. For example, method 700 may include determining the temperature of the workpiece for temperatures at which emitted radiation measurements may not be practically obtained (e.g., less than about 600° C.) based at least in part on the transmitted and reflected portions, e.g., according to steps 702-710. Additionally, method 700 may include determining the temperature of the workpiece for temperatures at which emitted radiation measurements may be practically obtained (e.g., greater than about 600° C.) based at least in part on the emitted radiation measurements, e.g., according to steps 712-714.

[0083] FIG. 8 illustrates a flow chart of an exemplary method 800 for calibrating a reference intensity of a sensor in a thermal processing system, such as the thermal processing systems 100, 200, or 300 of FIGS. 1-3. FIG. 8 illustrates steps performed in a particular order for purposes of illustration and explanation. Those skilled in the art will appreciate, using the disclosure provided herein, that various steps of any of the methods described herein may be omitted, expanded, performed simultaneously, rearranged, and / or modified in various ways without departing from the scope of the present disclosure. Additionally, various additional steps (not shown) may be performed without departing from the scope of the present disclosure.

[0084] The method 800 may include emitting a first amount of infrared radiation from a respective emitter of the plurality of infrared emitters, at 802. The method 800 may include determining a second amount of infrared radiation incident on a respective sensor of the plurality of infrared sensors, at 804. The method 800 may include determining a baseline intensity associated with the respective emitter and the respective sensor based at least in part on a variation between the first amount and the second amount, at 806.

[0085] According to exemplary aspects of the present disclosure, a reference intensity, denoted herein as I0, can be determined for each of one or more sensors in a thermal processing system. The reference intensity can correspond to radiation emitted by the emitter and / or radiation incident on the sensor when no workpiece is present in the processing chamber. In other words, the reference intensity can be reduced from the intensity of radiation emitted by the emitter only by contributions from components other than the workpiece in the thermal processing system. This can further correspond to a case of 100% transmission by the workpiece. In some embodiments, the reference intensity can be measured before inserting a workpiece into the processing chamber, such as between thermal processing of two workpieces.

[0086] While the present subject matter has been described in detail with respect to certain exemplary embodiments thereof, it will be appreciated that those skilled in the art, upon understanding the foregoing, may readily produce modifications, variations, and equivalents of such embodiments. Accordingly, the scope of the present disclosure is by way of example, not limitation, and the present disclosure does not exclude the inclusion of such modifications, variations, and / or additions to the present subject matter as would be readily apparent to those skilled in the art.

Claims

1. 1. A thermal processing system for performing a thermal treatment of a semiconductor workpiece, the thermal processing system comprising: a workpiece support plate configured to support a workpiece; one or more heat sources configured to heat the workpiece; one or more windows disposed between the workpiece support plate and the one or more heat sources, the windows including one or more transparent regions that are transparent to at least a portion of electromagnetic radiation in a measurement wavelength range and one or more opaque regions that are opaque to electromagnetic radiation within the portion of the measurement wavelength range; a temperature measurement system configured to obtain temperature measurements indicative of a temperature of the workpiece; and The temperature measurement system includes: a plurality of infrared emitters configured to emit infrared radiation; a plurality of infrared sensors, each corresponding to one of the plurality of infrared emitters, each of the plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range and disposed such that at least one of the one or more transparent regions is at least partially within a field of view of at least one of the plurality of infrared sensors; A controller, obtaining at least one first transmittance measurement, at least one second transmittance measurement, and at least one reflectance measurement associated with the workpiece from the plurality of infrared sensors; determining a temperature of the workpiece based at least in part on the at least one first transmittance measurement, the at least one second transmittance measurement, and the at least one reflectance measurement when the temperature of the workpiece is less than about 600° C.; a controller configured to perform operations including: A heat treatment system comprising:

2. The operation includes: obtaining one or more emission measurements from the plurality of infrared sensors indicative of an intensity of emitted radiation emitted by the workpiece; determining a temperature of the workpiece based at least in part on the one or more emission measurements when the temperature of the workpiece is greater than about 600° C.; The thermal treatment system of claim 1 , further comprising:

3. the one or more infrared emitters include a central emitter operable to emit radiation toward a central portion of the workpiece and an edge emitter operable to emit radiation toward an edge portion of the workpiece; the one or more infrared sensors include a center sensor corresponding to the center emitter and an edge sensor corresponding to the edge emitter; The heat treatment system of claim 2 .

4. The thermal processing system of claim 1 , wherein the one or more heat sources are configured to emit broadband radiation to heat the workpiece.

5. The thermal treatment system of claim 4 , wherein the one or more opaque regions are configured to block at least a portion of broadband radiation emitted by the heat source and within the measurement wavelength range.

6. The thermal processing system of claim 5 , wherein the one or more opaque regions comprise hydroxyl-doped quartz and the one or more transmissive regions comprise hydroxyl-free quartz.

7. The thermal processing system of claim 1 , wherein at least one of the plurality of infrared emitters is pulsed at a pulsed frequency.

8. 8. The thermal processing system of claim 7, wherein at least one of the at least one first transmittance measurement, the at least one second transmittance measurement, or the at least one reflectance measurement is separated from the plurality of infrared sensors based at least in part on the pulse frequency.

9. The thermal processing system of claim 7 , wherein the pulse frequency is 130 Hz.

10. The thermal processing system of claim 1 , wherein the measurement wavelength range includes at least one of 2.3 micrometers or 2.7 micrometers.

11. 2. The thermal treatment system of claim 1, wherein the thermal treatment system includes at least one optical notch filter disposed at least partially within a field of view of at least one of the plurality of infrared sensors, the optical notch filter configured to select at least a portion of the measurement wavelength range from a range of wavelengths measurable by the at least one of the plurality of infrared sensors.

12. The thermal processing system of claim 1 , wherein the plurality of infrared sensors comprises one or more pyrometers.

13. determining a temperature of the workpiece based at least in part on the at least one first transmittance measurement, the at least one second transmittance measurement, and the at least one reflectance measurement when the temperature of the workpiece is less than about 600° C. determining an emissivity of the workpiece based at least in part on the at least one first transmittance measurement and the at least one reflectance measurement; determining a temperature of the workpiece based at least in part on the at least one second transmittance measurement and the emissivity of the workpiece; The thermal processing system of claim 1 .

14. 2. The thermal treatment system of claim 1 , wherein the at least one first transmittance measurement and the at least one reflectance measurement are associated with a first wavelength in the measurement wavelength range, the at least one second transmittance measurement is associated with a second wavelength in the measurement wavelength range, and the one or more opaque regions are opaque to the first wavelength and transparent to the second wavelength.

15. The controller, when no workpiece is present in the workpiece handling system, determines a baseline intensity of at least one of the plurality of infrared sensors based on: emitting a first amount of infrared radiation from each emitter of the plurality of infrared emitters; determining a second amount of infrared radiation incident on each sensor of the plurality of infrared sensors; determining the reference intensity associated with each of the emitters and each of the sensors based at least in part on a variation between the first amount and the second amount; The thermal processing system of claim 1 , configured to determine by:

16. 1. A method for measuring a temperature of a workpiece in a thermal processing system, the method comprising: emitting, with one or more infrared emitters, infrared radiation directed toward one or more surfaces of the workpiece; blocking, with one or more windows, at least a portion of broadband radiation emitted by one or more heat lamps configured to heat the workpiece from being incident on one or more infrared sensors; measuring, with the one or more infrared sensors, a transmitted portion of infrared radiation emitted by at least one of the one or more infrared emitters that passes through the one or more surfaces of the workpiece; measuring, with the one or more infrared sensors, a reflected portion of infrared radiation emitted by at least one of the one or more infrared emitters and reflected by the one or more surfaces of the workpiece; determining a first temperature measurement indicative of a temperature of the workpiece based at least in part on the transmitted portion and the reflected portion, wherein the temperature of the workpiece is less than about 600° C.; A method comprising:

17. The method further comprising: measuring with the one or more infrared sensors emitted radiation measurements indicative of infrared radiation emitted by the workpiece; determining a second temperature measurement indicative of a temperature of the workpiece based at least in part on the emitted radiation measurement, the temperature of the workpiece being greater than about 600° C.; 20. The method of claim 16, further comprising:

18. determining a second temperature measurement indicative of a temperature of the workpiece based at least in part on the emitted radiation measurement, wherein the temperature of the workpiece is greater than about 600° C.; Comparing the emitted radiation measurements to a blackbody radiation curve associated with the workpiece.

20. The method of claim 17, comprising:

19. determining a temperature of the workpiece based at least in part on the transmitted portion and the reflected portion, wherein the temperature of the workpiece is less than about 600° C.; determining an emissivity of the workpiece based at least in part on the transmitted and reflected portions; determining a temperature of the workpiece based at least in part on the emissivity of the transmitted portion and the workpiece; and 17. The method of claim 16, comprising:

20. The method further comprising: pulsing at least one of the one or more infrared emitters at a pulsed frequency; isolating at least one measurement from the one or more infrared sensors based at least in part on the pulse frequency; and 20. The method of claim 16, further comprising:

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