Semiconductor device and method for manufacturing the same

Abstract

To provide a technique capable of enhancing the reliability of a semiconductor device.SOLUTION: The semiconductor device includes a semiconductor element, a linear wiring member that is connected to the top of the semiconductor element, a coating member in contact with the wiring member on the upper area of the semiconductor element and the semiconductor element, and a sealing member that protects the semiconductor element, the wiring member, and the coating member. The coating member includes a material having covalent bonds between each of silicon and a metal and oxygen, a silicon oxide, and a siloxane.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device. [Background technology]

[0002] In order to improve the reliability of semiconductor devices, a structure has been proposed in which semiconductor elements are covered and protected with a coating material such as polyimide (for example, Patent Document 1). In addition, a resin containing at least one pendant group including a -Si(OR)3 group has been proposed to improve adhesion. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2006-351737 A [Patent Document 2] Special Publication No. 2010-521552 Summary of the Invention [Problem to be solved by the invention]

[0004] Generally, when a coating member reacts with energy such as heat, light, or plasma, the composition after the reaction differs from the composition before the reaction, and not only the desired reactant but also other by-products are generated. As a result, even if the composition is specified before the reaction, the desired adhesion and reliability may not be obtained depending on the ratio of the by-products after the reaction. For this reason, there is room for improvement in the adhesion and reliability of coating members.

[0005] In addition, in the past, in order to improve the reliability of semiconductor devices, the adhesion between the semiconductor element and the sealing member has been improved by applying a coating to the semiconductor element that generates the most heat in the semiconductor device. However, although the wire diameter of the wiring member is very thin, at several tens to several hundreds of μm, the heat of the linear wiring member connected to the semiconductor element is relatively large, similar to the heat of the semiconductor element, and therefore there was a problem that the wiring member was prone to breakage.

[0006] Therefore, the present disclosure has been made in consideration of the above-mentioned problems, and has an object to provide a technique capable of improving the reliability of a semiconductor device. [Means for solving the problem]

[0007] The semiconductor device according to the present disclosure includes a semiconductor element, a linear wiring member connected to an upper portion of the semiconductor element, a coating member in contact with the semiconductor element and the wiring member in an upper region of the semiconductor element, and a sealing member for protecting the semiconductor element, the wiring member, and the coating member, the coating member including a substance having a covalent bond between oxygen and silicon and a metal, silicon oxide, and siloxane. and the number of said substances in said coating member is 0.1% or more of the number of silicon atoms in said coating member. . Effect of the Invention

[0008] According to the present disclosure, the coating member is in contact with the wiring member in the upper region of the semiconductor element, and includes a substance having covalent bonds between silicon and oxygen, a metal, and silicon oxide, and siloxane. With this configuration, the reliability of the semiconductor device can be improved. [Brief description of the drawings]

[0009] [Figure 1] 1 is a cross-sectional view showing a configuration of a semiconductor device according to a first embodiment. [Diagram 2] FIG. 11 is a cross-sectional view showing a configuration of a semiconductor device according to a modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described with reference to the accompanying drawings. The features described in each of the following embodiments are merely examples, and not all features are necessarily required. In addition, in the following description, similar components in multiple embodiments are given the same or similar reference numerals, and different components are mainly described. In addition, in the following description, specific positions and directions such as "upper", "lower", "left", "right", "front" or "back" do not necessarily correspond to positions and directions in actual implementation.

[0011] <Embodiment 1> Fig. 1 is a cross-sectional view showing the configuration of a semiconductor device 100 according to the present embodiment 1. The semiconductor device 100 in Fig. 1 includes a base plate 11, bonding members 12 and 13, a semiconductor element 14, a wiring member 17, a case member 18, a sealing member 20, a coating member 21, and an insulating substrate 30.

[0012] The insulating substrate 30 includes an insulating layer 32 , a conductive portion 31 provided on the insulating layer 32 , and a conductive circuit portion 33 provided on the insulating layer 32 on the opposite side to the conductive portion 31 .

[0013] The insulating layer 32 may be made of an inorganic ceramic material such as, but not limited to, alumina (Al2O3), aluminum nitride (AlN), silicon nitride (Si3N4), silicon dioxide (SiO2), or boron nitride (BN). The insulating layer 32 may be made of a resin material in which at least one of fine particles and a filler is dispersed. At least one of the fine particles and the filler may be made of an inorganic ceramic material such as, for example, alumina (Al2O3), aluminum nitride (AlN), silicon nitride (Si3N4), silicon dioxide (SiO2), boron nitride (BN), diamond (C), silicon carbide (SiC), or boron oxide (B2O3), or may be made of a resin material such as silicone resin or acrylic resin. The resin in which at least one of the fine particles and the filler is dispersed is not particularly limited as long as it has electrical insulation properties, and may be made of, for example, epoxy resin, polyimide resin, silicone resin, or acrylic resin.

[0014] The conductive portion 31 and the conductive circuit portion 33 are not particularly limited, and may be made of a metal material such as copper or aluminum. The material of the conductive portion 31 and the material of the conductive circuit portion 33 may be the same or different. The number of conductive circuit portions 33 may be one or more, and is determined by, for example, the rated capacity and wiring specifications of the semiconductor device 100.

[0015] The base plate 11 is joined to the conductive portion 31 of the insulating substrate 30 via a joining member 12. The base plate 11 may be made of, but is not limited to, a metal material such as copper, aluminum, or a copper-molybdenum alloy (CuMo), or may be made of, for example, a composite material such as a silicon carbide-aluminum composite material (AlSiC) or a silicon carbide-magnesium composite material (MgSiC). The base plate 11 may also be made of, for example, an organic material such as an epoxy resin, a polyimide resin, an acrylic resin, or a polyphenylene sulfide (PPS) resin. The joining member 12 is not particularly limited as long as it is a member for joining, and may be made of, for example, solder.

[0016] The semiconductor element 14 is joined to the conductive circuit portion 33 of the insulating substrate 30 via the joining member 13. In other words, the joining member 13 is connected to the lower portion of the semiconductor element 14, and the conductive circuit portion 33, the insulating layer 32, and the conductive portion 31 are connected to the lower portion of the semiconductor element 14 via the joining member 13 in this order.

[0017] The semiconductor element 14 is not particularly limited, and may be, for example, an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), a PN junction diode (PND), a Schottky barrier diode (SBD), or a free wheeling diode (FWD). The semiconductor element 14 is not particularly limited, and may be, for example, made of normal silicon (Si), or may be made of a wide band gap semiconductor such as silicon carbide (SiC), gallium nitride (GaN), or diamond. When the semiconductor element 14 is made of a wide band gap semiconductor, stable operation under high temperature and high voltage and high switching speed can be achieved. The bonding member 13 is not particularly limited as long as it is a member for bonding, and the material of the bonding member 12 and the material of the bonding member 13 may be the same or different.

[0018] The number of insulating substrates 30 and the number of semiconductor elements 14 may be one or more, and is determined, for example, by the rated capacity and wiring specifications of the semiconductor device 100. The number of bonding members 12, 13 is determined according to the number of insulating substrates 30 and the number of semiconductor elements 14.

[0019] The case member 18 encloses the semiconductor element 14 and the wiring member 17, and exposes the surface of the base plate 11 opposite the semiconductor element 14. The case member 18 is not particularly limited as long as it is made of an electrically insulating material, and may be made of, for example, epoxy resin, polyimide resin, acrylic resin, polyphenylene sulfide (PPS) resin, or the like.

[0020] The terminal 19 is embedded in the case member 18 with both ends exposed. The material of the terminal 19 may be the same as or different from the material of the conductive circuit portion 33.

[0021] One end of the linear wiring member 17 is connected to the upper part of the semiconductor element 14. The other end of the wiring member 17 is connected to the conductive circuit portion 33 of the insulating substrate 30, a terminal 19, or the like. The wiring member 17 is made of a conductive material such as copper or aluminum, and the wire diameter of the wiring member 17 is, for example, several tens to several hundreds of μm.

[0022] The sealing member 20 protects the semiconductor element 14, the wiring member 17, and the coating member 21. The sealing member 20 may be made of an insulating resin such as, for example, epoxy resin, silicone resin, urethane resin, polyimide resin, polyamide resin, or acrylic resin. The epoxy resin is an epoxy member, and the silicone resin is a silicone gel. The sealing member 20 may also be made of an insulating resin material in which fine particles or fillers that improve strength and thermal conductivity are dispersed, and the fine particles or fillers may be made of an inorganic ceramic material such as, for example, alumina (Al2O3), aluminum nitride (AlN), silicon nitride (Si3N4), silicon dioxide (SiO2), boron nitride (BN), diamond (C), silicon carbide (SiC), or boron oxide (B2O3).

[0023] The coating member 21 contacts the semiconductor element 14 and the wiring member 17 in the region 14a above the semiconductor element 14. In the first embodiment, the coating member 21 also contacts the bonding member 13 and the conductive circuit portion 33.

[0024] The coating member 21 is -Si(OR) before the reaction. xIt is composed of a silane coupling agent having a group. Here, R may be a hydrocarbon group, x may be any one of 1 to 3, and the number of carbon atoms in the hydrocarbon group may be 1 to 10. The functional group connected to Si may be, for example, an epoxy group, an amino group, a vinyl group, a styryl group, a methacryl group, an acrylic group, a mercapto group, an isocyanate, an isocyanurate, or an acid anhydride.

[0025] When energy such as heat or light is applied to the silane coupling agent of the coating member 21, a reaction occurs and the agent changes to a substance having a covalent bond of -Si-OM (M is a metal), silicon oxide, siloxane, or the like. Therefore, the coating member 21 of the completed semiconductor device 100 contains a substance having a covalent bond between silicon and a metal and oxygen, silicon oxide, and siloxane. Of these, the covalent bond substance affects the adhesion between the coating member 21 and the components in contact with it, and silicon oxide and siloxane affect the wettability on the adherend.

[0026] The number of covalently bonded substances in coating member 21 may be 0.1% or more of the number of silicon atoms in coating member 21. If the covalently bonded substances contributing to adhesion are 0.1% or more of the number of silicon atoms, higher adhesion can be achieved compared to configurations using coating member 21 in other ranges and configurations without coating member 21, which can contribute to improving the reliability of semiconductor device 100. The number of silicon atoms in coating member 21 can be measured by, for example, TOF-SIMS (time-of-flight secondary ion mass spectrometry).

[0027] Furthermore, the coating member 21 exists in the form of a relatively thin film, and the thickness may be in the range of 10 nm to 100 μm. If the coating member 21 is thinner than 10 nm, it is considered that there will be a portion with a thin film thickness or a portion where the coating member 21 is not present, and the reliability of the semiconductor device 100 may decrease from that portion. If the coating member 21 is thicker than 100 μm, the reaction of the coating member 21 caused by applying energy may not proceed sufficiently, and the strength of the coating member 21 may not be sufficiently secured. For the above reasons, the thickness of the coating member 21 is preferably 10 nm to 100 μm, and more preferably 10 nm to 1 μm.

[0028] The coating member 21 has a role of improving the adhesiveness between the semiconductor element 14 and the sealing member 20, and has an adhesive strength higher than the stress generated by heat generated during operation of the semiconductor element 14, thereby suppressing deterioration of the semiconductor device 100. In the present embodiment 1, the coating member 21 is provided on the upper part of the semiconductor element 14, and the upper part of the semiconductor element 14 is connected to the wiring member 17. In general, the wire diameter of the wiring member 17 is as thin as several tens to several hundreds of μm, and the material of the wiring member 17 is easily deteriorated due to stress caused by expansion of the constituent materials accompanying heat generation of the semiconductor element 14 and the wiring member 17. In contrast, in the present embodiment 1, the coating member 21 is provided in contact with not only the semiconductor element 14 but also the wiring member 17, thereby improving the reliability of the semiconductor device 100.

[0029] It is not necessary to provide the coating member 21 on the entire wiring member 17. If the coating member 21 is provided so as to contact a portion that is affected by heat generated in the operation of the semiconductor element 14, for example, a portion of the wiring member 17 in the region 14a above the semiconductor element 14, the reliability of the semiconductor device 100 is expected to be improved.

[0030] Coating member 21 may further include carbon atoms, and the number of carbon atoms may account for 50% or less of the total number of atoms in coating member 21. Such a configuration is obtained as a result of the reaction of coating member 21 proceeding to a certain extent or more, and therefore it is possible to ensure that coating member 21 provides an effect at least at a certain extent.

[0031] The covalently bonded metal may be a metal contained in coating member 21 before the reaction of coating member 21, or may be at least one of a metal of wiring member 17, a metal of joining member 13, and a metal of conductive circuit portion 33. For example, when the covalently bonded metal is a metal of wiring member 17, it can be covalently bonded to wiring member 17 itself, thereby further increasing the adhesiveness of coating member 21.

[0032] In addition, in the formation of a general coating member 21, a silane coupling agent is diluted with water or alcohol as a solvent to form -Si(OR) x The part is -Si(OH) x By doing so, the reaction of the silane coupling agent proceeds. However, even if a solvent containing water or alcohol is not added to the chemical solution of the coating member 21, the reaction proceeds due to the absorption of moisture by the chemical solution itself, the mediation of moisture in the air, or the addition of high energy such as heat or light, so it is not necessary to add a solvent. In view of this, the coating member 21 may be formed by applying the chemical solution to the semiconductor element 14 and the wiring member 17 without adding a solvent containing water or alcohol to the chemical solution of the coating member 21. According to such a manufacturing method, the time required for preparation of the solution and the reaction can be shortened, so that the efficiency of the manufacturing process of the semiconductor device 100 can be improved.

[0033] <Modification> Fig. 2 is a cross-sectional view showing the configuration of the semiconductor device 100 according to this modification. As shown in Fig. 2, the base plate 11 may not be provided, and the case member 18 may be configured to expose the conductive portion 31. With such a configuration, the conductive portion 31 also serves as the base plate 11, thereby reducing the cost of the device.

[0034] In addition, the embodiments can be modified or omitted as appropriate. [Explanation of symbols]

[0035] 13 bonding member, 14 semiconductor element, 17 wiring member, 18 case member, 20 sealing member, 21 coating member, 31 conductive portion, 32 insulating layer, 33 conductive circuit portion, 100 semiconductor device.

Claims

1. A semiconductor element; a linear wiring member connected to an upper portion of the semiconductor element; a coating member in contact with the semiconductor element and the wiring member in an upper region of the semiconductor element; a sealing member for protecting the semiconductor element, the wiring member, and the coating member; Equipped with The coating member includes a material having a covalent bond between silicon and a metal and oxygen, silicon oxide, and siloxane; A semiconductor device, wherein the number of the substance in the coating member is 0.1% or more of the number of silicon atoms in the coating member.

2. 2. The semiconductor device according to claim 1, a bonding member connected to a lower portion of the semiconductor element; a conductive circuit portion connected to the semiconductor element via the bonding member; Further equipped with The coating member is further in contact with the joining member and the conductive circuit portion.

3. 2. The semiconductor device according to claim 1, a conductive circuit portion, an insulating layer, and a conductive portion, which are connected in this order to a lower portion of the semiconductor element via a bonding member; a case member that exposes the conductive portion and surrounds the semiconductor element and the wiring member; The semiconductor device further comprises:

4. 4. The semiconductor device according to claim 1, The semiconductor device, wherein the coating member has a thickness of 10 nm or more and 100 μm or less.

5. 5. The semiconductor device according to claim 1, The coating member further comprises carbon atoms; A semiconductor device, wherein the number of carbon atoms accounts for 50% or less of the total number of atoms in the coating member.

6. 6. The semiconductor device according to claim 1, The semiconductor device, wherein the sealing member includes an epoxy member or a silicone gel.

7. A method for manufacturing a semiconductor device according to any one of claims 1 to 6, comprising the steps of: A method for manufacturing a semiconductor device, comprising the steps of: forming the coating member by applying a chemical solution to the semiconductor element and the wiring member without adding a solvent containing water or alcohol to the chemical solution of the coating member.

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