Display device

Abstract

A display device having a light-detection function is provided. A highly convenient display device is provided.　Disclosed is a display device comprising, in a display unit, a light-reception element, a first light-emission element, and a second light-emission element. The light-reception element includes a first pixel electrode, an active layer, and a common electrode. The first light-emission element includes a second pixel electrode, a first light-emission layer, and the common electrode. The second light-emission element includes a third pixel electrode, a second light-emission layer, and the common electrode. The active layer includes an organic compound. The active layer is located between the first pixel electrode and the common electrode. The first light-emission layer is located between the second pixel electrode and the common electrode. The second light-emission layer is located between the third pixel electrode and the common electrode. The first light-emission layer is also located between the first pixel electrode and the common electrode and / or between the third pixel electrode and the common electrode.

Description

[Technical field]

[0001] 1. Field of the Invention One embodiment of the present invention relates to a display device having a light receiving element and a light emitting element.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device (e.g., a touch sensor), an input / output device (e.g., a touch panel), a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] In recent years, display devices are expected to be used in a variety of applications. For example, applications of large display devices include home television devices (also called televisions or television receivers), digital signage, and public information displays (PIDs). In addition, smartphones and tablet devices equipped with touch panels are being developed as mobile information terminals.

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. A light-emitting element (also referred to as an EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon has features such as being easily thin and lightweight, being capable of responding quickly to an input signal, and being capable of being driven by a low-voltage direct current power supply, and is applied to a display device. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2014-197522 A Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a display device having a light detection function.An object of one embodiment of the present invention is to provide a highly convenient display device.An object of one embodiment of the present invention is to provide a multifunctional display device.An object of one embodiment of the present invention is to provide a display device with a high aperture ratio.An object of one embodiment of the present invention is to provide a display device with high definition.An object of one embodiment of the present invention is to provide a novel display device.

[0007] An object of one embodiment of the present invention is to improve the manufacturing yield of a display device having a light detection function.An object of one embodiment of the present invention is to reduce the number of steps for manufacturing a display device having a light detection function.An object of one embodiment of the present invention is to reduce the manufacturing cost of a display device having a light detection function.

[0008] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description of the specification, drawings, and claims. [Means for solving the problem]

[0009] A display device according to one embodiment of the present invention includes a light receiving element, a first light emitting element, and a second light emitting element in a display portion. The light receiving element includes a first pixel electrode, an active layer, and a common electrode. The first light emitting element includes a second pixel electrode, a first light emitting layer, and a common electrode. The second light emitting element includes a third pixel electrode, a second light emitting layer, and a common electrode. The active layer includes an organic compound. The active layer is located between the first pixel electrode and the common electrode. The first light emitting layer is located between the second pixel electrode and the common electrode. The second light emitting layer is located between the third pixel electrode and the common electrode. The first light emitting layer is further located between the first pixel electrode and the common electrode and / or between the third pixel electrode and the common electrode.

[0010] A display device according to one embodiment of the present invention includes a light receiving element and a first light emitting element in a display portion. The light receiving element includes a first pixel electrode, an active layer, a first light emitting layer, and a common electrode. The first light emitting element includes a second pixel electrode, a first light emitting layer, and a common electrode. The active layer includes an organic compound. The active layer is located between the first pixel electrode and the common electrode. The first light emitting layer is located between the first pixel electrode and the common electrode and between the second pixel electrode and the common electrode.

[0011] In the display device having the above configuration, the display section preferably further includes a second light-emitting element. The second light-emitting element preferably includes a third pixel electrode, a first light-emitting layer, a second light-emitting layer, and a common electrode. The first light-emitting layer and the second light-emitting layer are preferably located between the third pixel electrode and the common electrode. The first light-emitting element preferably emits light emitted by the first light-emitting layer. The second light-emitting element preferably emits light emitted by the second light-emitting layer.

[0012] Alternatively, in the display device having the above structure, the first light-emitting element preferably further includes an active layer, which is preferably located between the second pixel electrode and the common electrode.

[0013] A display device according to one embodiment of the present invention includes a light receiving element, a first light emitting element, a second light emitting element, a first colored layer, and a second colored layer in a display portion. The light receiving element includes a first pixel electrode, an active layer, and a common electrode. The first light emitting element includes a second pixel electrode, a first light emitting layer, and a common electrode. The second light emitting element includes a third pixel electrode, a first light emitting layer, and a common electrode. The active layer includes an organic compound. The active layer is located between the first pixel electrode and the common electrode. The first light emitting layer is located between the second pixel electrode and the common electrode and between the third pixel electrode and the common electrode. Light emitted by the first light emitting element is extracted as light of a first color from the display portion through the first colored layer. Light emitted by the second light emitting element is extracted as light of a second color from the display portion through the second colored layer.

[0014] In the display device having the above configuration, it is preferable that the first light-emitting element and the second light-emitting element further have a second light-emitting layer. The second light-emitting layer is preferably located between the second pixel electrode and the common electrode, and between the third pixel electrode and the common electrode. It is preferable that the first light-emitting layer and the second light-emitting layer emit light having different wavelengths.

[0015] In the display device having the above configuration, the display section preferably further includes a third light-emitting element and a third colored layer. The third light-emitting element preferably includes a fourth pixel electrode, a third light-emitting layer, and a common electrode. The third light-emitting layer is preferably located between the second pixel electrode and the common electrode, between the third pixel electrode and the common electrode, and between the fourth pixel electrode and the common electrode. The light emitted by the third light-emitting element is preferably taken out of the display section as light of a third color via the third colored layer.

[0016] In the display device having each of the above configurations, the light receiving element and the first light emitting element preferably further have a common layer, which is preferably located between the first pixel electrode and the common electrode and between the second pixel electrode and the common electrode.

[0017] In the display device having each of the above configurations, the display unit preferably further includes a partition wall. The partition wall preferably covers an end of the first pixel electrode and an end of the second pixel electrode. The partition wall preferably has a function of electrically insulating the first pixel electrode and the second pixel electrode. The partition wall preferably has a function of absorbing at least a part of the light emitted by the first light-emitting element.

[0018] In the display device having each of the above configurations, the display unit preferably further includes a color layer. The color layer preferably has a portion in contact with one or both of the upper surface and the side surface of the partition wall. The color layer preferably includes a color filter or a black matrix.

[0019] In the display device having each of the above configurations, the display section preferably further includes a lens. The lens preferably has a portion overlapping with the light receiving element. Light transmitted through the lens preferably enters the light receiving element. The display section preferably further includes a light blocking layer. An edge of the light blocking layer preferably overlaps with an edge of the lens. The light blocking layer preferably overlaps with the partition wall.

[0020] In the display device having each of the above configurations, the display portion is preferably flexible.

[0021] One embodiment of the present invention is a module having a display device having any of the above configurations, and having a connector such as a flexible printed circuit (hereinafter referred to as FPC) or a TCP (Tape Carrier Package) attached, or a module having an integrated circuit (IC) mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method, or the like.

[0022] One embodiment of the present invention is an electronic device including any of the above modules and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button. Effect of the Invention

[0023] According to one embodiment of the present invention, a display device having a light detection function can be provided. According to one embodiment of the present invention, a highly convenient display device can be provided. According to one embodiment of the present invention, a multifunction display device can be provided. According to one embodiment of the present invention, a display device with a high aperture ratio can be provided. According to one embodiment of the present invention, a display device with high definition can be provided. According to one embodiment of the present invention, a novel display device can be provided.

[0024] According to one embodiment of the present invention, the manufacturing yield of a display device having a light detection function can be improved. According to one embodiment of the present invention, the number of steps for manufacturing a display device having a light detection function can be reduced. According to one embodiment of the present invention, the manufacturing cost of a display device having a light detection function can be reduced.

[0025] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief description of the drawings]

[0026] Figures 1A to 1D are cross-sectional views showing an example of a display device, and Figures 1E to 1H are top views showing an example of a pixel. FIG. 2 is a cross-sectional view showing an example of a display device. 3A and 3B are cross-sectional views showing an example of a display device. 4A and 4B are cross-sectional views showing an example of a display device. 5A and 5B are cross-sectional views showing an example of a display device. 6A and 6B are cross-sectional views showing an example of a display device. 7A and 7B are cross-sectional views showing an example of a display device. 8A to 8C are cross-sectional views showing an example of a display device. 9A to 9C are cross-sectional views showing an example of a display device. FIG. 10 is a perspective view showing an example of a display device. FIG. 11 is a cross-sectional view showing an example of a display device. 12A and 12B are cross-sectional views showing an example of a display device. Fig. 13A is a cross-sectional view illustrating an example of a display device, and Fig. 13B is a cross-sectional view illustrating an example of a transistor. FIG. 14 is a cross-sectional view showing an example of a display device. 15A and 15B are circuit diagrams showing an example of a pixel circuit. 16A and 16B are diagrams showing an example of a method for driving a display device. 17A and 17B are diagrams showing an example of a method for driving a display device. 18A and 18B are diagrams illustrating an example of an electronic device. 19A to 19D are diagrams showing an example of an electronic device. 20A to 20F are diagrams showing an example of an electronic device. FIG. 21 is a diagram showing voltage-luminance characteristics of a light emitting / receiving element. FIG. 22 is a diagram showing the luminance vs. external quantum efficiency characteristics of a light emitting / receiving element. FIG. 23 is a diagram showing the wavelength dependency of the light receiving sensitivity of the light receiving / emitting element. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that the modes and details of the present invention can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0028] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and the repeated explanations are omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be used.

[0029] In addition, for ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0030] In addition, the words "film" and "layer" can be interchanged depending on the case or situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer".

[0031] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0032] The display device of this embodiment has a light receiving element and a light emitting element in a display portion. In the display device of this embodiment, the light emitting elements are arranged in a matrix in the display portion, and an image can be displayed on the display portion. The light receiving elements are arranged in a matrix in the display portion, and the display portion has one or both of an imaging function and a sensing function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, an image can be captured and the proximity or contact of an object (such as a finger or a pen) can be detected. Furthermore, the display device of this embodiment can use the light emitting element as a light source of a sensor. Therefore, it is not necessary to provide a light receiving portion and a light source separately from the display device, and the number of components of an electronic device can be reduced.

[0033] In the display device of this embodiment, when an object reflects the light emitted by a light-emitting element in the display unit, the light-receiving element can detect the reflected light, making it possible to capture images and detect touch (and even proximity) even in dark places.

[0034] The display device of this embodiment has a function of displaying an image using a light-emitting element, that is, the light-emitting element functions as a display element.

[0035] As the light-emitting element, it is preferable to use an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of the light-emitting substance that the EL element has include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), an inorganic compound (such as a quantum dot material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material). In addition, an LED such as a micro LED (Light Emitting Diode) can also be used as the light-emitting element.

[0036] The display device of this embodiment mode has a function of detecting light using a light receiving element.

[0037] In the case where the light receiving element is used as an image sensor, the display device of this embodiment can capture an image by using the light receiving element.

[0038] For example, data such as fingerprints, palm prints, or irises can be acquired using an image sensor. That is, a biometric authentication sensor can be built into the display device of the present embodiment. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced, and the electronic device can be made smaller and lighter, compared to a case where a biometric authentication sensor is provided separately from the display device.

[0039] In addition, data such as the user's facial expression, eye movement, or change in pupil diameter can be obtained using an image sensor. By analyzing the data, the user's mental and physical information can be obtained. By changing the display and / or audio output content based on the information, it is possible to ensure that the user can use the device safely, for example, in a VR (Virtual Reality) device, an AR (Augmented Reality) device, or an MR (Mixed Reality) device.

[0040] When the light-receiving element is used as a touch sensor, the display device of this embodiment can detect the proximity or contact of an object by using the light-receiving element.

[0041] The light receiving element can be, for example, a pn-type or pin-type photodiode. The light receiving element functions as a photoelectric conversion element that detects light incident on the light receiving element and generates electric charge. The amount of electric charge generated is determined based on the amount of incident light.

[0042] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light receiving element. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, and therefore can be applied to various display devices.

[0043] In one embodiment of the present invention, an organic EL element is used as a light-emitting element, and an organic photodiode is used as a light-receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL element.

[0044] If all layers constituting an organic EL element and an organic photodiode are to be separately fabricated, the number of film formation steps will be very large. Since organic photodiodes have many layers that can be configured in common with organic EL elements, the increase in film formation steps can be suppressed by forming the layers that can be configured in common at once. In addition, even if the number of film formations is the same, by reducing the number of layers that are formed only on some elements, it is possible to reduce the effect of misalignment of the film formation pattern and the effect of dust (including small foreign objects called particles) attached to the film formation mask (metal mask, etc.). This makes it possible to increase the yield of display device production.

[0045] In a display device according to one embodiment of the present invention, a light-emitting layer of a first light-emitting element that emits a first color is provided in common to one or both of a light-receiving element and a second light-emitting element that emits a second color, thereby reducing the number of layers to be separately fabricated for the light-receiving element, the first light-emitting element, and the second light-emitting element, and increasing the manufacturing yield of the display device.

[0046] Furthermore, it is preferable that at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer is a layer common to the light receiving element, the first light emitting element, and the second light emitting element. This can reduce the number of film formations and the number of masks, and can reduce the manufacturing process and manufacturing cost of the display device. Note that the layer common to the light receiving element, the first light emitting element, and the second light emitting element may have different functions in the light emitting element and in the light receiving element. In this specification, the components are named based on their functions in the light emitting element. For example, the hole injection layer functions as a hole injection layer in the light emitting element, and functions as a hole transport layer in the light receiving element. Similarly, the electron injection layer functions as an electron injection layer in the light emitting element, and functions as an electron transport layer in the light receiving element.

[0047] 1A to 1D each show a cross-sectional view of a display device according to one embodiment of the present invention.

[0048] A display device 50A shown in FIG. 1A has, between a substrate 51 and a substrate 59, a layer 53 having light receiving elements and a layer 57 having light emitting elements.

[0049] A display device 50B shown in FIG. 1B includes, between a substrate 51 and a substrate 59, a layer 53 having a light receiving element, a layer 55 having a transistor, and a layer 57 having a light emitting element.

[0050] The display device 50A and the display device 50B are configured such that red (R), green (G), and blue (B) light are emitted from a layer 57 having light emitting elements.

[0051] The light receiving elements included in the layer 53 having light receiving elements can detect light incident from outside the display device 50A or the display device 50B.

[0052] A display device according to an embodiment of the present invention has a plurality of pixels arranged in a matrix. Each pixel has one or more sub-pixels. Each sub-pixel has one light-emitting element. For example, the pixel may have three sub-pixels (three colors: R, G, and B, or three colors: yellow (Y), cyan (C), and magenta (M)) or four sub-pixels (four colors: R, G, B, and white (W), or four colors: R, G, B, and Y). The pixel further has a light-receiving element. The light-receiving element may be provided in all pixels or in some pixels. Also, one pixel may have a plurality of light-receiving elements.

[0053] The layer 55 having transistors preferably has a first transistor and a second transistor. The first transistor is electrically connected to the light receiving element. The second transistor is electrically connected to the light emitting element.

[0054] The display device according to one embodiment of the present invention may have a function of detecting an object such as a finger touching the display device. For example, as shown in Fig. 1C, light emitted by a light-emitting element in a layer 57 having a light-emitting element is reflected by a finger 52 touching the display device 50B, and the light-receiving element in a layer 53 having a light-receiving element detects the reflected light. This makes it possible to detect that the finger 52 has touched the display device 50B.

[0055] The display device according to one embodiment of the present invention may have a function of detecting or capturing an image of an object that is close to (not in contact with) a display device 50B, as shown in FIG. 1D.

[0056] [Pixels] 1E to 1H show an example of a pixel.

[0057] The pixel shown in Fig. 1E and Fig. 1F has three sub-pixels (three light-emitting elements) of R, G, and B, and a light-receiving element PD. Fig. 1E is an example in which the three sub-pixels and the light-receiving element PD are arranged in a 2 × 2 matrix, and Fig. 1F is an example in which the three sub-pixels and the light-receiving element PD are arranged in a single horizontal row.

[0058] The pixel shown in FIG. 1G has four sub-pixels (four light-emitting elements) of R, G, B, and W, and a light-receiving element PD.

[0059] The pixel shown in FIG. 1H has three sub-pixels, R, G, and B, a light-emitting element IR that emits infrared light, and a light-receiving element PD. In this case, it is preferable that the light-receiving element PD has a function of detecting infrared light. The light-receiving element PD may have a function of detecting both visible light and infrared light. The wavelength of light detected by the light-receiving element PD can be determined according to the application of the sensor.

[0060] A detailed structure of a light-emitting element and a light-receiving element included in a display device of one embodiment of the present invention will be described below with reference to FIGS.

[0061] The display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to a substrate on which a light-emitting element is formed, a bottom emission type that emits light toward the substrate on which a light-emitting element is formed, and a dual emission type that emits light to both sides.

[0062] 2 to 7, a top emission type display device will be described as an example.

[0063] In this specification and the like, unless otherwise specified, even when describing a configuration having a plurality of elements (light-emitting elements, light-emitting layers, etc.), when describing matters common to each element, the alphabet will be omitted. For example, when describing matters common to light-emitting layer 193R and light-emitting layer 193G, etc., the light-emitting layer may be written as 193.

[0064] [Configuration example 1] First, the display device shown in FIG. 2, FIG. 3A, and FIG. 3B will be described.

[0065] The display device shown in Figures 2, 3A, and 3B has, on a substrate 151, a light-emitting element 47B that emits blue (B) light, a light-emitting element 47G that emits green (G) light, a light-emitting element 47R that emits red (R) light, and a light-receiving element 46, via a layer 55 having a transistor.

[0066] Each of the light-emitting elements 47B, 47G, and 47R has a pixel electrode 191 and a common electrode 115. In this embodiment, a case will be described as an example in which the pixel electrode 191 functions as an anode and the common electrode 115 functions as a cathode.

[0067] The light receiving element 46 has a pixel electrode 181 and a common electrode 115. In this embodiment, the pixel electrode 181 functions as an anode and the common electrode 115 functions as a cathode, similar to the light emitting element. In other words, the light receiving element 46 is driven by applying a reverse bias between the pixel electrode 181 and the common electrode 115, whereby the light receiving element 46 can detect light incident on the light receiving element 46, generate charges, and extract the charges as a current.

[0068] The pixel electrode 191 and the pixel electrode 181 can be formed of the same material and in the same process. The pixel electrodes 191 of the light-emitting elements are electrically insulated from each other (also referred to as being electrically separated). The pixel electrode 181 of the light-receiving element 46 is electrically insulated from the pixel electrode 191 of each light-emitting element.

[0069] The common electrode 115 is used in common by the light receiving element 46, the light emitting element 47B, the light emitting element 47G, and the light emitting element 47R.

[0070] The materials and thicknesses of the pairs of electrodes of the light receiving element 46, the light emitting element 47B, the light emitting element 47G, and the light emitting element 47R can be made the same, which can reduce the manufacturing cost of the display device and simplify the manufacturing process.

[0071] 2, 3A, and 3B, the light-emitting layer 193B is provided not only in the light-emitting element 47B that emits blue light, but also in the light-emitting element 47R that emits red light, the light-emitting element 47G that emits green light, and the light-receiving element 46. In the light-emitting element 47R, the light-emitting element 47G, and the light-receiving element 46, the light-emitting layer 193B functions as a carrier transport layer (in this embodiment, an electron transport layer).

[0072] By reducing the number of layers to be fabricated for each element, the display device can be manufactured more easily. In comparison with the case where the light-emitting layer 193B is provided only in the light-emitting element 47B, when the light-emitting layer 193B is provided also in the light-emitting element and the light-receiving element that emits other colors, the influence of the misalignment of the pattern of the light-emitting layer 193B can be reduced, and the yield in the manufacture of the display device can be increased.

[0073] Furthermore, when the light-emitting layer 193B is formed in a deposition chamber different from that for the buffer layer 192B and the buffer layer 194B, a separate mask is required for the deposition of the light-emitting layer 193B. In such a case, by configuring the light-emitting layer 193B to be used in common for the light-receiving element 46, the light-emitting element 47B, the light-emitting element 47G, and the light-emitting element 47R, the number of masks required for deposition can be reduced, and the manufacturing cost can be reduced.

[0074] In addition, since high accuracy is required for the alignment of the substrate and the mask, it may take time to position the mask, and misalignment may affect the display quality of the manufactured display device. The fewer the number of masks, the shorter the manufacturing time of the display device and the higher the yield, which is preferable.

[0075] The configuration of the display device shown in FIG. 2 will be specifically described.

[0076] The light emitting element 47B has a buffer layer 192B, a light emitting layer 193B, and a buffer layer 194B in this order on a pixel electrode 191. The light emitting layer 193B has a light emitting material that emits blue light. The light emitting element 47B has a function of emitting blue light.

[0077] The light emitting element 47G has a buffer layer 192G, a light emitting layer 193G, a light emitting layer 193B, and a buffer layer 194G in this order on a pixel electrode 191. The light emitting layer 193G has a light emitting material that emits green light. The light emitting element 47G has a function of emitting green light.

[0078] The light emitting element 47R has a buffer layer 192R, a light emitting layer 193R, a light emitting layer 193B, and a buffer layer 194R in this order on a pixel electrode 191. The light emitting layer 193R has a light emitting material that emits red light. The light emitting element 47R has a function of emitting red light.

[0079] The light receiving element 46 has a buffer layer 182, an active layer 183, a light emitting layer 193B, and a buffer layer 184 in this order on a pixel electrode 181. The active layer 183 contains an organic compound. The light receiving element 46 has a function of detecting one or both of visible light and infrared light.

[0080] The pixel electrode 181, the pixel electrode 191, the buffer layer 182, the buffer layer 192R, the buffer layer 192G, the buffer layer 192B, the active layer 183, the light-emitting layer 193R, the light-emitting layer 193G, the light-emitting layer 193B, the buffer layer 184, the buffer layer 194R, the buffer layer 194G, the buffer layer 194B, and the common electrode 115 may each have a single layer structure or a laminated structure.

[0081] The light emitting layer 193B is provided in common to the light emitting element 47B, the light emitting element 47G, the light emitting element 47R, and the light receiving element 46. On the other hand, the light emitting layer 193G, the light emitting layer 193R, and the active layer 183 are layers that are separately manufactured for each element, and the light emitting layer 193G is provided in the light emitting element 47G, the light emitting layer 193R is provided in the light emitting element 47R, and the active layer 183 is provided in the light receiving element 46.

[0082] Buffer layer 182 can include a hole transport layer. Buffer layers 192B, 192G, and 192R can each include one or both of a hole injection layer and a hole transport layer. Buffer layer 184 can include an electron transport layer. Buffer layers 184, 194B, 194G, and 194R can each include one or both of an electron injection layer and an electron transport layer.

[0083] The hole injection layer is a layer that injects holes from the anode to the light emitting element and contains a material with high hole injection properties, such as an aromatic amine compound or a composite material containing a hole transport material and an acceptor material (electron accepting material).

[0084] In a light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a light-receiving element, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer that contains a hole transport material. The hole transport material is a 1×10 -6 cm 2 A material having a hole mobility of 100 / Vs or more is preferable. Note that other materials can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton) is preferable.

[0085] In a light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In a light-receiving element, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer that contains an electron transport material. The electron transport material is a material having a density of 1×10-6 cm 2A substance having an electron mobility of 100 / Vs or more is preferable. Note that, other substances may be used as long as they have a higher electron transporting property than holes. As the electron transporting material, a metal complex having a quinoline skeleton, a metal complex having a benzoquinoline skeleton, a metal complex having an oxazole skeleton, a metal complex having a thiazole skeleton, and the like, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other materials having a high electron transporting property such as π-electron deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds may be used.

[0086] The electron injection layer is a layer that injects electrons from the cathode to the light-emitting element, and is a layer that contains a material with high electron injection properties. As the material with high electron injection properties, an alkali metal, an alkaline earth metal, or a compound thereof can be used. As the material with high electron injection properties, a composite material containing an electron transport material and a donor material (electron donor material) can also be used.

[0087] It is preferable that a micro-optical resonator (microcavity) structure is applied to the light-emitting element of the display device of this embodiment. Therefore, it is preferable that one of a pair of electrodes of the light-emitting element has an electrode (semi-transmissive / semi-reflective electrode) that is transparent and reflective to visible light, and the other has an electrode (reflective electrode) that is reflective to visible light. When the light-emitting element has a microcavity structure, the light emitted from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting element can be strengthened.

[0088] The semi-transmitting / semi-reflective electrode may have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode). In this specification, the reflective electrode, which functions as a part of the semi-transmitting / semi-reflective electrode, may be referred to as a pixel electrode or a common electrode, and the transparent electrode may be referred to as an optical adjustment layer, but the transparent electrode (optical adjustment layer) may also function as a pixel electrode or a common electrode.

[0089] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode for the light emitting element that has a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more. The visible light reflectance of the semi-transmissive / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 -2 When a light emitting element that emits near-infrared light is used in a display device, the transmittance and reflectance of these electrodes for near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less) are preferably within the above-mentioned numerical ranges.

[0090] Each of the buffer layers 182, 192B, 192G, and 192R may have a function as an optical adjustment layer. Specifically, in the light-emitting element 47B, it is preferable to adjust the film thickness of the buffer layer 192B so that the optical distance between the pair of electrodes is an optical distance that strengthens blue light. Similarly, in the light-emitting element 47G, it is preferable to adjust the film thickness of the buffer layer 192G so that the optical distance between the pair of electrodes is an optical distance that strengthens green light. And, in the light-emitting element 47R, it is preferable to adjust the film thickness of the buffer layer 192R so that the optical distance between the pair of electrodes is an optical distance that strengthens red light. By making the film thickness of the buffer layer 192 or the buffer layer 194 different, it is possible to strengthen and extract light of a specific color in each light-emitting element. Note that, when the semi-transmissive / semi-reflective electrode has a laminated structure of a reflective electrode and a transparent electrode, the optical distance between the pair of electrodes refers to the optical distance between the pair of reflective electrodes.

[0091] The configuration of the display device shown in FIG. 3A will be specifically described.

[0092] The display device shown in FIG. 3A has a common layer 112 and a common layer 114 in addition to the configuration of the display device shown in FIG.

[0093] By forming at least a part of layers constituting the light emitting element and the light receiving element in a common structure, the manufacturing process of the display device can be reduced, which is preferable.

[0094] Specifically, the light-emitting element 47B shown in FIG. 3A has a common layer 112 between the pixel electrode 191 and the buffer layer 192B, and has a common layer 114 between the buffer layer 194B and the common electrode 115. Similarly, the light-emitting element 47G shown in FIG. 3A has a common layer 112 between the pixel electrode 191 and the buffer layer 192G, and has a common layer 114 between the buffer layer 194G and the common electrode 115. The light-emitting element 47R shown in FIG. 3A has a common layer 112 between the pixel electrode 191 and the buffer layer 192R, and has a common layer 114 between the buffer layer 194R and the common electrode 115. The light-receiving element 46 shown in FIG. 3A has a common layer 112 between the pixel electrode 181 and the buffer layer 182, and has a common layer 114 between the buffer layer 184 and the common electrode 115.

[0095] Each of the common layer 112 and the common layer 114 may have a single-layer structure or a laminated structure.

[0096] The common layer 112 may have, for example, one or both of a hole injection layer and a hole transport layer. The common layer 114 may have, for example, one or both of an electron injection layer and an electron transport layer. The common layer 112 and the common layer 114 may have different functions in the light-emitting element and in the light-receiving element. For example, when the common layer 112 has a hole injection layer, the hole injection layer functions as a hole injection layer in the light-emitting element and functions as a hole transport layer in the light-receiving element. Similarly, when the common layer 114 has an electron injection layer, the electron injection layer functions as an electron injection layer in the light-emitting element and functions as an electron transport layer in the light-receiving element.

[0097] An example of the display device shown in FIG. 3A is a configuration in which common layer 112 has a hole injection layer, buffer layers 182, 192B, 192G, and 192R each have a hole transport layer, buffer layers 184, 194B, 194G, and 194R each have an electron transport layer, and common layer 114 has an electron injection layer.

[0098] The common layer 112 and the common layer 114 are respectively located on the pixel electrode 181 and the pixel electrode 191. The common layer 112 and the common layer 114 are layers used in common by the light receiving element 46 and the light emitting element 47, respectively.

[0099] The configuration of the display device shown in FIG. 3B will be specifically described.

[0100] The display shown in FIG. 3B differs from the display shown in FIG. 3A in that it does not have buffer layers 182, 192, 184, 194, but has common layers 112, 114.

[0101] The light emitting element 47B has a common layer 112 between the pixel electrode 191 and the light emitting layer 193B, and has a common layer 114 between the light emitting layer 193B and the common electrode 115.

[0102] The light emitting element 47G has a common layer 112 between the pixel electrode 191 and the light emitting layer 193G, and has a common layer 114 between the light emitting layer 193B and the common electrode 115.

[0103] The light emitting element 47R has a common layer 112 between the pixel electrode 191 and the light emitting layer 193R, and has a common layer 114 between the light emitting layer 193B and the common electrode 115.

[0104] The light receiving element 46 has a common layer 112 between the pixel electrode 181 and the active layer 183 , and has a common layer 114 between the light emitting layer 193 B and the common electrode 115 .

[0105] An example of the display device shown in FIG. 3B has a structure in which the common layer 112 has a hole injection layer and a hole transport layer, and the common layer 114 has an electron transport layer and an electron injection layer.

[0106] 3B shows an example in which the light receiving element 46 and the light emitting element 47 have a common configuration, except that the active layer 183 of the light receiving element 46, the light emitting layer 193R of the light emitting element 47R, and the light emitting layer 193G of the light emitting element 47G are separately fabricated. By using a layer (common layer) that the light receiving element 46 and the light emitting element 47 have in common and reducing a layer (buffer layer) that is separately fabricated for the light receiving element 46 and the light emitting element 47, the light receiving element 46 can be built into the display device without significantly increasing the number of fabrication steps.

[0107] 3B, the light-emitting element 47B does not have a layer for fabricating a separate element from other elements, so that the number of masks can be reduced, thereby reducing the manufacturing cost of the display device.

[0108] [Configuration example 2] Next, the display device shown in FIGS. 4A, 4B, 5A and 5B will be described.

[0109] The display device shown in Figures 4A, 4B, 5A, and 5B has a light-emitting element 47B that emits blue (B) light, a light-emitting element 47G that emits green (G) light, a light-emitting element 47R that emits red (R) light, a light-receiving element 46, a colored layer CFG, and a colored layer CFR, on a substrate 151, via a layer 55 having a transistor. The display device shown in Figure 5B further has a colored layer CFB.

[0110] Each of the light emitting elements 47B, 47G, and 47R has a pixel electrode 191 and a common electrode 115.

[0111] The light receiving element 46 has a pixel electrode 181 and a common electrode 115 .

[0112] The common electrode 115 is used in common for the light receiving element 46 and the light emitting element 47 that emits light of each color.

[0113] In the display device shown in FIG. 4A, FIG. 4B, and FIG. 5A, the light emitting element 47R and the light emitting element 47G have a common light emitting layer. In FIG. 4A and FIG. 4B, the light emitting element 47R and the light emitting element 47G have a light emitting layer 193R that emits red light and a light emitting layer 193G that emits green light. In FIG. 5A, the light emitting element 47R and the light emitting element 47G have a light emitting layer 193Y that emits yellow light. Then, the light emitted by the light emitting element 47R is taken out of the display device as red light through the colored layer CFR. Also, the light emitted by the light emitting element 47G is taken out of the display device as green light through the colored layer CFG.

[0114] By making the light-emitting element 47R and the light-emitting element 47G have a common structure, the number of film-forming steps and the number of masks can be reduced compared to a structure in which the light-emitting element 47R and the light-emitting element 47G have layers that are separately manufactured, and therefore the manufacturing steps and manufacturing costs of the display device can be reduced.

[0115] Furthermore, by making the light-emitting element 47R and the light-emitting element 47G have a common configuration, the margin for misalignment can be narrowed compared to a configuration in which the light-emitting element 47R and the light-emitting element 47G have layers that are separately manufactured from each other. This allows the aperture ratio of the pixel to be increased, and the light extraction efficiency of the display device to be improved. The higher the aperture ratio of the pixel, the lower the luminance of the sub-pixel required to obtain a certain luminance in the display device. This allows the life of the light-emitting element to be extended. Furthermore, the display device can express high luminance. Furthermore, the display device can also have high definition.

[0116] In FIG. 5B, the light emitting element 47R, the light emitting element 47G, and the light emitting element 47B have a common light emitting layer. Each light emitting element has a light emitting layer 193R that emits red light, a light emitting layer 193G that emits green light, and a light emitting layer 193B that emits blue light. The light emitted by the light emitting element 47R is extracted as red light from the display device through the coloring layer CFR. The light emitted by the light emitting element 47G is extracted as green light from the display device through the coloring layer CFG. The light emitted by the light emitting element 47B is extracted as blue light from the display device through the coloring layer CFB.

[0117] By making the light-emitting elements 47R, 47G, and 47B have a common configuration, the number of film-forming steps and the number of masks can be reduced compared to a configuration in which the light-emitting elements 47R, 47G, and 47B have layers that are separately manufactured, and therefore the manufacturing steps and manufacturing costs of the display device can be reduced.

[0118] Furthermore, by making the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have a common configuration, the margin for misalignment can be narrowed compared to a configuration in which the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have layers that are made separately from one another. This allows the aperture ratio of the pixel to be increased, and the light extraction efficiency of the display device to be improved. The higher the aperture ratio of the pixel, the lower the luminance of the sub-pixel required to obtain a certain luminance in the display device. This allows the life of the light-emitting element to be extended. Furthermore, the display device can express high luminance. Furthermore, the display device can also be made high-definition.

[0119] The configuration of the display device shown in FIG. 4A will be specifically described.

[0120] The light-emitting element 47B has a common layer 112, a buffer layer 192B, a light-emitting layer 193B, and a common layer 114 in this order on a pixel electrode 191. The light-emitting layer 193B has a light-emitting material that emits blue light. The light-emitting element 47B has a function of emitting blue light.

[0121] The light emitting element 47G and the light emitting element 47R each have a common layer 112, a buffer layer 192, a light emitting layer 193R, a light emitting layer 193G, and a common layer 114, in this order, on a pixel electrode 191. The light emitting layer 193R has a light emitting material that emits red light. The light emitting layer 193G has a light emitting material that emits green light. The light emitted by the light emitting element 47G is extracted as green light through the colored layer CFG. The light emitted by the light emitting element 47R is extracted as red light through the colored layer CFR.

[0122] The light receiving element 46 has a common layer 112, a buffer layer 182, an active layer 183, and a common layer 114 in this order on a pixel electrode 181. The active layer 183 contains an organic compound. The light receiving element 46 has a function of detecting one or both of visible light and infrared light.

[0123] The light-emitting layer 193R and the light-emitting layer 193G are provided in common to the light-emitting element 47G and the light-emitting element 47R. On the other hand, the light-emitting layer 193B and the active layer 183 are layers that are fabricated separately for each element. The light-emitting layer 193B is provided in the light-emitting element 47B, and the active layer 183 is provided in the light-receiving element 46.

[0124] An example of the display device shown in FIG. 4A is a configuration in which the common layer 112 has a hole injection layer, the buffer layers 182, 192B, and 192 each have a hole transport layer, and the common layer 114 has one or both of an electron injection layer and an electron transport layer.

[0125] Also, in FIG. 4A, an example is shown in which the light-emitting element 47G and the light-emitting element 47R have the same configuration, but the light-emitting element 47G and the light-emitting element 47R may have optical adjustment layers of different thicknesses. For example, it is preferable to optically adjust the pixel electrode 191 by forming a laminated structure of a reflective electrode and a transparent electrode on the reflective electrode, and by making the thickness of the transparent electrode different between the light-emitting element 47G and the light-emitting element 47R. Specifically, the light-emitting element 47G may be provided with a transparent electrode so that the optical distance between the pair of electrodes is an optical distance that strengthens green light, and the light-emitting element 47R may be provided with a transparent electrode so that the optical distance between the pair of electrodes is an optical distance that strengthens red light. It is also preferable that the light-emitting element 47B is optically adjusted by using the buffer layer 192B so that the optical distance between the pair of electrodes is an optical distance that strengthens blue light. Similarly, it is preferable that the light-receiving element 46 is optically adjusted by using the buffer layer 182 so that the optical distance between the pair of electrodes is an optical distance that strengthens light of a wavelength to be detected. Alternatively, the light emitting element 47B and the light receiving element 46 may each be provided with an optical adjustment layer (transparent electrode).

[0126] The configuration of the display device shown in FIG. 4B will be specifically described.

[0127] The display device shown in FIG. 4B differs from the display devices shown in FIGS. 4A and 5A in that light-emitting layer 193B is provided not only on light-emitting element 47B that emits blue light, but also on light-emitting elements 47R and 47G that emit light of other colors, and on light-receiving element 46.

[0128] In the light emitting elements 47R and 47G and the light receiving element 46, the light emitting layer 193B functions as a carrier transport layer (in the present embodiment, an electron transport layer).

[0129] As in the configuration example 1, the number of layers separately prepared for each element can be reduced, thereby simplifying the production of the display device. In comparison with the case where the light-emitting layer 193B is provided only in the light-emitting element 47B, when the light-emitting layer 193B is provided also in the light-emitting element emitting light of each color and the light-receiving element, the influence of the misalignment of the pattern of the light-emitting layer 193B can be reduced, and the yield in the production of the display device can be increased.

[0130] Furthermore, since a mask dedicated to the deposition of the light-emitting layer 193B is not required, it is possible to reduce the fabrication cost, shorten the fabrication time, and improve the yield.

[0131] The configuration of the display device shown in FIG. 5A will be specifically described.

[0132] The display device shown in FIG. 5A differs from the display device shown in FIG. 4A in that light-emitting element 47R and light-emitting element 47G do not have light-emitting layer 193R that emits red light and light-emitting layer 193G that emits green light, but have light-emitting layer 193Y that emits yellow light.

[0133] By reducing the number of light-emitting layers included in the light-emitting element 47R and the light-emitting element 47G, the number of steps in manufacturing the display device can be reduced.

[0134] In addition, in the display device shown in FIG. 5A, the light-emitting layer 193B can be provided not only in the light-emitting element 47B that emits blue light, but also in the light-emitting elements 47R and 47G that emit light of other colors, and the light-receiving element 46.

[0135] The configuration of the display device shown in FIG. 5B will be specifically described.

[0136] The display device shown in FIG. 5B differs from the display device shown in FIG. 4A in that light-emitting element 47R, light-emitting element 47G, and light-emitting element 47B have the same configuration, and in that light emitted by light-emitting element 47B is extracted through colored layer CFB.

[0137] The light emitting element 47R, the light emitting element 47G, and the light emitting element 47B each have a common layer 112, a buffer layer 192, a light emitting layer 193R, a light emitting layer 193G, a light emitting layer 193B, and a common layer 114 in this order on the pixel electrode 191. The light emitting layer 193R has a light emitting material that emits red light. The light emitting layer 193G has a light emitting material that emits green light. The light emitting layer 193B has a light emitting material that emits blue light. The light emitted by the light emitting element 47R is extracted as red light through the colored layer CFR. The light emitted by the light emitting element 47G is extracted as green light through the colored layer CFG. The light emitted by the light emitting element 47B is extracted as blue light through the colored layer CFB.

[0138] The light emitting element 47 may have a single structure having one light emitting unit between the pixel electrode 191 and the common electrode 115, or may have a tandem structure having a plurality of light emitting units.

[0139] The light receiving element 46 has a common layer 112, a buffer layer 182, an active layer 183, and a common layer 114 in this order on a pixel electrode 181. The active layer 183 contains an organic compound. The light receiving element 46 has a function of detecting one or both of visible light and infrared light.

[0140] The light-emitting layer 193R, the light-emitting layer 193G, and the light-emitting layer 193B are provided in common to the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B. By making the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have a common configuration, the number of film formation steps and the number of masks can be reduced compared to a configuration in which the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have layers that are separately manufactured for each other. Therefore, the manufacturing steps and manufacturing costs of the display device can be reduced.

[0141] In FIG. 5B, the light emitting element 47R, the light emitting element 47G, the light emitting element 47B, and the light receiving element 46 may each have an optical adjustment layer with a different thickness.

[0142] [Configuration example 3] Next, the display devices shown in FIGS. 6A, 6B, 7A and 7B will be described.

[0143] The display device shown in Figures 6A, 6B, 7A, and 7B has, on a substrate 151, a light-emitting element 47B that emits blue (B) light, a light-emitting element 47G that emits green (G) light, a light-emitting element 47R that emits red (R) light, and a light-receiving element 46, via a layer 55 having a transistor.

[0144] Each of the light emitting elements 47B, 47G, and 47R has a pixel electrode 191 and a common electrode 115.

[0145] The light receiving element 46 has a pixel electrode 181 and a common electrode 115 .

[0146] The common electrode 115 is used in common for the light receiving element 46 and the light emitting element 47 that emits light of each color.

[0147] 6A, 7A, and 7B, the light receiving element 46 and the light emitting element 47R have a common light emitting layer 193R and active layer 183. In the display device shown in FIG. 6B, the light receiving element 46 and the light emitting element 47G have a common light emitting layer 193G and active layer 183.

[0148] Here, the light receiving element 46 may have a common configuration with a light emitting element that emits light of a longer wavelength than the light to be detected. For example, the light receiving element 46 configured to detect blue light may have a similar configuration to one or both of the light emitting element 47R and the light emitting element 47G. For example, the light receiving element 46 configured to detect green light may have a similar configuration to the light emitting element 47R.

[0149] By making the light receiving element 46 and the light emitting element 47R or the light emitting element 47G have a common structure, the number of film forming steps and the number of masks can be reduced compared to a structure in which the light receiving element 46 and the light emitting element 47R or the light emitting element 47G have layers that are separately manufactured, and therefore the manufacturing steps and manufacturing costs of the display device can be reduced.

[0150] Furthermore, by making the light receiving element 46 and the light emitting element 47R or the light emitting element 47G have a common configuration, the margin for misalignment can be narrowed compared to a configuration in which the light receiving element 46 and the light emitting element 47R or the light emitting element 47G have layers that are made separately from each other. This makes it possible to increase the aperture ratio of the pixel and to increase the light extraction efficiency of the display device. This makes it possible to extend the life of the light emitting element. Furthermore, the display device can express high brightness. Furthermore, it is possible to increase the resolution of the display device.

[0151] The configuration of the display device shown in FIG. 6A will be specifically described.

[0152] The light-emitting element 47B has a common layer 112, a buffer layer 192B, a light-emitting layer 193B, and a common layer 114 in this order on a pixel electrode 191. The light-emitting layer 193B has a light-emitting material that emits blue light. The light-emitting element 47B has a function of emitting blue light.

[0153] The light-emitting element 47G has a common layer 112, a buffer layer 192G, a light-emitting layer 193G, and a common layer 114 in this order on a pixel electrode 191. The light-emitting layer 193G has a light-emitting material that emits green light. The light-emitting element 47G has a function of emitting green light.

[0154] The light-emitting element 47R and the light-receiving element 46 each have a common layer 112, a buffer layer 182, a light-emitting layer 193R, an active layer 183, and a common layer 114 on a pixel electrode in this order. The light-emitting layer 193R has a light-emitting material that emits red light. The active layer 183 has an organic compound that absorbs light with a shorter wavelength than red light (for example, one or both of green light and blue light). It is preferable that the active layer 183 has an organic compound that does not easily absorb red light and absorbs light with a shorter wavelength than red light. This allows the light-emitting element 47R to efficiently extract red light, and the light-receiving element 46 to detect light with a shorter wavelength than red light with high accuracy.

[0155] 6A shows an example in which the light-emitting element 47R and the light-receiving element 46 have the same configuration, but the light-emitting element 47R and the light-receiving element 46 may have optical adjustment layers of different thicknesses. For example, it is preferable to optically adjust the pixel electrodes 191 and 181 by forming a laminated structure of a reflective electrode and a transparent electrode on the reflective electrode, and by making the thickness of the transparent electrode different between the light-emitting element 47R and the light-receiving element 46. Specifically, it is preferable that the light-emitting element 47R is provided with a transparent electrode such that the optical distance between the pair of electrodes is an optical distance that strengthens red light, and it is preferable that the light-receiving element 46 is provided with a transparent electrode such that the optical distance between the pair of electrodes is an optical distance that strengthens light of a wavelength to be detected. This allows the light-emitting element 47R to efficiently extract red light, and the light-receiving element 46 to detect light with high accuracy. It is also preferable that the light-emitting element 47G is optically adjusted by using the buffer layer 192G such that the optical distance between the pair of electrodes is an optical distance that strengthens green light. Similarly, it is preferable that the light emitting element 47B is optically adjusted using the buffer layer 192B so that the optical distance between the pair of electrodes is an optical distance that intensifies blue light. Alternatively, the light emitting element 47G and the light emitting element 47B may each be provided with an optical adjustment layer (transparent electrode).

[0156] For example, common layer 112 may include a hole injection layer, buffer layers 182, 192B, and 192G may each include a hole transport layer, and common layer 114 may include one or both of an electron injection layer and an electron transport layer.

[0157] The configuration of the display device shown in FIG. 6B will be specifically described.

[0158] A light emitting element 47B shown in FIG. 6B has the same configuration as that shown in FIG. 6A.

[0159] The light-emitting element 47R has a common layer 112, a buffer layer 192R, a light-emitting layer 193R, and a common layer 114 in this order on a pixel electrode 191. The light-emitting layer 193R has a light-emitting material that emits red light. The light-emitting element 47R has a function of emitting red light.

[0160] The light emitting element 47G and the light receiving element 46 each have a common layer 112, a buffer layer 182, a light emitting layer 193G, an active layer 183, and a common layer 114 on a pixel electrode in this order. The light emitting layer 193G has a light emitting material that emits green light. The active layer 183 has an organic compound that absorbs light with a shorter wavelength than green light (e.g., blue light). It is preferable that the active layer 183 has an organic compound that does not easily absorb light from red to green and absorbs light with a shorter wavelength than green light. This allows green light to be efficiently extracted from the light emitting element 47G, and the light receiving element 46 can detect light with a shorter wavelength than green light with high accuracy.

[0161] The thickness of the pixel electrode or the buffer layer of the light-emitting element 47G and the light-receiving element 46 may be different from each other. Specifically, the light-emitting element 47G may be optically adjusted so that the optical distance between the pair of electrodes is an optical distance that intensifies green light, and the light-receiving element 46 may be optically adjusted so that the optical distance between the pair of electrodes is an optical distance that intensifies light of a wavelength to be detected. This allows the light-emitting element 47G to efficiently extract green light, and the light-receiving element 46 to detect light with high accuracy.

[0162] In the display device of this embodiment, an organic compound is used for the active layer 183 of the light receiving element 46. The light receiving element 46 can be manufactured by simply changing at least a part of the structure between a pair of electrodes in the light emitting element 47. Therefore, the light receiving element 46 can be built into the display unit of the display device. In addition, the light receiving element can also have a common structure with a light emitting element that emits red or green light. In this way, by having at least a part of the layers constituting the light emitting element and the light receiving element have a common structure, the manufacturing process of the display device can be reduced.

[0163] The configuration of the display device shown in FIG. 7A will be specifically described.

[0164] The display device shown in FIG. 7A differs from the display device shown in FIG. 6A in that the light emitting element 47R and the light receiving element 46 do not have the buffer layer 182, and the light emitting layer 193R is located on the active layer 183.

[0165] The order in which the active layer 183 and the light emitting layer 193R are stacked is not limited. The light emitting layer 193R may be provided on the active layer 183, or the active layer 183 may be provided on the light emitting layer 193R.

[0166] The buffer layers 192B and 192G may be, for example, hole transport layers. The light emitting element 47R and the light receiving element 46 may not have hole transport layers. In this manner, among the light emitting elements 47R, 47G, and 47B and the light receiving element 46, there may be a layer (for example, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, an electron blocking layer, etc.) that is provided in one of the elements and not provided in the other elements.

[0167] The configuration of the display device shown in FIG. 7B will be specifically described.

[0168] The display device shown in FIG. 7B differs from the display device shown in FIG. 6A in that it has a buffer layer 182 between the active layer 183 and the light-emitting layer 193R.

[0169] The light emitting layer 193R and the active layer 183 may be in contact with each other, or a layer may be sandwiched between them.

[0170] By providing a buffer layer between the active layer 183 and the light emitting layer 193R, it is possible to suppress the transfer of excitation energy from the light emitting layer 193R to the active layer 183. In addition, the buffer layer can be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, high light emission efficiency can be obtained from the light emitting element 47R having a buffer layer between the active layer 183 and the light emitting layer 193R.

[0171] For example, the common layer 112 may have a hole injection layer, the buffer layers 182, 192B, and 192G may each have a hole transport layer, and the common layer 114 may have one or both of an electron injection layer and an electron transport layer. The common layer 112 may further have a hole transport layer. That is, the light-emitting element and the light-receiving element may each have both the hole transport layer of the common layer 112 and the hole transport layer of the buffer layer.

[0172] The structure of a display device according to one embodiment of the present invention will be described below with reference to FIGS.

[0173] [Display device 10A] 8A shows a cross-sectional view of the display device 10A. The display device 10A has the configuration shown in FIG. 3B described in Configuration Example 1. For details of each layer, the description of Configuration Example 1 can be referred to.

[0174] The display device 10A has a light receiving element 110, a light emitting element 190B, and a light emitting element 190G. The light receiving element 110 has a function of detecting light 22. The wavelength of the light 22 detected by the light receiving element 110 is not particularly limited, and for example, the light receiving element 110 can detect one or both of visible light and infrared light. The light emitting element 190B has a function of emitting blue light 21B. The light emitting element 190G has a function of emitting green light 21G.

[0175] The light emitting element 190B includes a pixel electrode 191, a common layer 112, a light emitting layer 193B, a common layer 114, and a common electrode 115.

[0176] The light emitting element 190G includes a pixel electrode 191, a common layer 112, a light emitting layer 193G, a light emitting layer 193B, a common layer 114, and a common electrode 115.

[0177] The light receiving element 110 includes a pixel electrode 181 , a common layer 112 , an active layer 183 , a light emitting layer 193 B, a common layer 114 , and a common electrode 115 .

[0178] The pixel electrode 181 and the pixel electrode 191 are located on the insulating layer 214. The pixel electrode 181 and the pixel electrode 191 can be formed of the same material and in the same process.

[0179] The common layer 112 is located on the pixel electrode 181 and the pixel electrode 191. The common layer 112 is a layer used in common by the light receiving element 110, the light emitting element 190B, and the light emitting element 190G. As the common layer 112, for example, one or both of a hole injection layer and a hole transport layer can be formed.

[0180] The active layer 183 overlaps with the pixel electrode 181 via the common layer 112. The light-emitting layer 193G overlaps with the pixel electrode 191 via the common layer 112. The light-emitting layer 193B overlaps with the pixel electrode 181 via the common layer 112 and the active layer 183. The light-emitting layer 193B overlaps with the pixel electrode 191 of the light-emitting element 190G via the common layer 112 and the light-emitting layer 193G. The light-emitting layer 193B overlaps with the pixel electrode 191 of the light-emitting element 190B via the common layer 112.

[0181] The common layer 114 is located on the light-emitting layer 193B. The common layer 114 is a layer used in common by the light-receiving element 110, the light-emitting element 190B, and the light-emitting element 190G. As the common layer 114, for example, one or both of an electron injection layer and an electron transport layer can be formed.

[0182] The common electrode 115 has a portion overlapping with the pixel electrode 181 through the common layer 112, the active layer 183, the light-emitting layer 193B, and the common layer 114. The common electrode 115 has a portion overlapping with the pixel electrode 191 of the light-emitting element 190G through the common layer 112, the light-emitting layer 193G, the light-emitting layer 193B, and the common layer 114. The common electrode 115 has a portion overlapping with the pixel electrode 191 of the light-emitting element 190B through the common layer 112, the light-emitting layer 193B, and the common layer 114. The common electrode 115 is a layer used in common by the light-receiving element 110, the light-emitting element 190B, and the light-emitting element 190G.

[0183] In the display device of this embodiment, an organic compound is used for the active layer 183 of the light receiving element 110. The light receiving element 110 can be manufactured by simply changing at least a part of the configuration between a pair of electrodes in the light emitting element 190 (EL element). That is, the light emitting element 190 and the light receiving element 110 can be formed on the same substrate. Also, the light receiving element 110 can be formed in parallel with the formation of the light emitting element 190. Therefore, the light receiving element 110 can be built into the display unit of the display device without significantly increasing the number of manufacturing steps.

[0184] In the display device 10A, the light receiving element 110 and the light emitting element 190G have a common configuration, except that the active layer 183 of the light receiving element 110 and the light emitting layer 193G of the light emitting element 190G are separately manufactured. However, the configuration of the light receiving element 110 and the light emitting element 190G is not limited to this. The light receiving element 110 and the light emitting element 190G may have layers that are separately manufactured, in addition to the active layer 183 and the light emitting layer 193G. It is preferable that the light receiving element 110 and the light emitting element 190G have one or more layers that are used in common (common layers). This allows the light receiving element 110 to be built into the display device without significantly increasing the number of manufacturing steps.

[0185] 8A, a light-emitting layer 193B emitting blue light is provided not only in a light-emitting element 190B emitting blue light, but also in a light-emitting element 190G and a light-receiving element 110. In the light-emitting element 190G and the light-receiving element 110, the light-emitting layer 193B functions as a carrier transport layer. By providing the light-emitting layer 193B in the light-emitting element and the light-receiving element emitting light of each color, it is possible to reduce the influence of misalignment of the pattern of the light-emitting layer 193B, and to increase the yield in the manufacture of the display device.

[0186] The display device 10A has a light receiving element 110, a light emitting element 190B, a light emitting element 190G, a transistor 41, a transistor 42, and the like between a pair of substrates (substrate 151 and substrate 152).

[0187] In the light receiving element 110, the common layer 112, the active layer 183, and the common layer 114, which are located between the pixel electrode 181 and the common electrode 115, respectively, can be called organic layers (layers containing an organic compound). The pixel electrode 181 preferably has a function of reflecting visible light. The end of the pixel electrode 181 is covered with a partition wall 216. The common electrode 115 has a function of transmitting visible light.

[0188] The light receiving element 110 has a function of detecting light. Specifically, the light receiving element 110 is a photoelectric conversion element that receives light 22 incident from the outside of the display device 10A and converts the light into an electrical signal. The light 22 can also be said to be light emitted by the light emitting element 190 and reflected by an object. The light 22 may also be incident on the light receiving element 110 via a lens, which will be described later.

[0189] It is preferable to provide a light-shielding layer BM on the surface of the substrate 152 facing the substrate 151. The light-shielding layer BM has openings at positions overlapping the light receiving element 110 and the light emitting element 190. By providing the light-shielding layer BM, the range in which the light receiving element 110 detects light can be controlled.

[0190] Here, the light receiving element 110 detects the light emitted by the light emitting element 190 reflected by the object. However, there are cases where the light emitted by the light emitting element 190 is reflected inside the display device 10A and enters the light receiving element 110 without passing through the object. The light shielding layer BM can suppress the influence of such stray light. For example, if the light shielding layer BM is not provided, the light 23a emitted by the light emitting element 190 may be reflected by the substrate 152, and the reflected light 23b may enter the light receiving element 110. By providing the light shielding layer BM, it is possible to suppress the reflected light 23b from entering the light receiving element 110. This can reduce noise and increase the sensitivity of the sensor using the light receiving element 110.

[0191] In the light-emitting element 190, the common layer 112, the light-emitting layer 193, and the common layer 114, which are located between the pixel electrode 191 and the common electrode 115, can also be called EL layers. The pixel electrode 191 preferably has a function of reflecting visible light. An end of the pixel electrode 191 is covered with a partition wall 216. The pixel electrode 181 and the pixel electrode 191 are electrically insulated from each other (also referred to as being electrically separated) by the partition wall 216. The common electrode 115 has a function of transmitting visible light.

[0192] The light emitting element 190B is an electroluminescent element that emits blue light 21B toward the substrate 152 side when a voltage is applied between the pixel electrode 191 and the common electrode 115.

[0193] The light emitting element 190G is an electroluminescent element that emits green light 21G to the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115.

[0194] The pixel electrode 181 is electrically connected to the source or drain of the transistor 41 through an opening provided in the insulating layer 214. An end of the pixel electrode 181 is covered with a partition wall 216.

[0195] The pixel electrode 191 is electrically connected to a source or a drain of the transistor 42 through an opening provided in the insulating layer 214. An end of the pixel electrode 191 is covered with a partition wall 216. The transistor 42 has a function of controlling driving of the light-emitting element 190.

[0196] The transistor 41 and the transistor 42 are in contact with each other on the same layer (substrate 151 in FIG. 8A).

[0197] At least a part of the circuit electrically connected to the light receiving element 110 is preferably formed of the same material and in the same process as the circuit electrically connected to the light emitting element 190. This allows the thickness of the display device to be thinner and the manufacturing process to be simplified compared to the case where the two circuits are formed separately.

[0198] The light receiving element 110 and the light emitting element 190 are preferably covered with a protective layer 195. In Fig. 8A, the protective layer 195 is provided on and in contact with the common electrode 115. By providing the protective layer 195, impurities such as water can be prevented from entering the light receiving element 110 and the light emitting element 190, and the reliability of the light receiving element 110 and the light emitting element 190 can be improved. In addition, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142.

[0199] [Display device 10B] 8B shows a cross-sectional view of the display device 10B. The display device 10B has the configuration described in Configuration Example 2. In the following description of the display device, the description of the same configuration as the display device described above may be omitted.

[0200] The display device 10B has a light receiving element 110, a light emitting element 190R, and a light emitting element 190G. The light receiving element 110 has a function of detecting light 22. The light emitting element 190R has a function of emitting red light 21R. The light emitting element 190G has a function of emitting green light 21G.

[0201] The light emitting element 190R and the light emitting element 190G have the same configuration. Specifically, the light emitting element 190R and the light emitting element 190G have a pixel electrode 191, a common layer 112, a light emitting layer 193, a common layer 114, and a common electrode 115. The light emitting layer 193 may have a single layer structure or a laminated structure. For example, as shown in FIG. 4A, the light emitting layer 193 may have a configuration having a light emitting layer 193R that emits red light and a light emitting layer 193G that emits green light, or as shown in FIG. 5A, the light emitting layer 193 may have a configuration having a light emitting layer 193Y that emits yellow light.

[0202] A red colored layer CFR and a green colored layer CFG are provided on the substrate 151 side of the substrate 152. Light emitted by the light emitting element 190R is extracted as red light from the display device 10B through the colored layer CFR. Light emitted by the light emitting element 190G is extracted as green light from the display device 10B through the colored layer CFG.

[0203] The light receiving element 110 includes a pixel electrode 181 , a common layer 112 , an active layer 183 , a common layer 114 , and a common electrode 115 .

[0204] In the display device 10B, the light receiving element 110 and the light emitting elements 190G and 190R have a common configuration, except that the active layer 183 of the light receiving element 110 and the light emitting layer 193 of the light emitting elements 190G and 190R are separately manufactured. However, the configuration of the light receiving element 110 and the light emitting elements 190G and 190R is not limited to this. The light receiving element 110 and the light emitting elements 190G and 190R may have layers that are separately manufactured in addition to the active layer 183 and the light emitting layer 193. It is preferable that the light receiving element 110 and the light emitting elements 190G and 190R have one or more layers that are used in common (common layers). This allows the light receiving element 110 to be built into the display device without significantly increasing the number of manufacturing steps.

[0205] [Display device 10C] 8C shows a cross-sectional view of the display device 10C. The display device 10C has the configuration shown in FIG.

[0206] The display device 10C includes a light receiving element 110, a light emitting element 190R, and a light emitting element 190G. The light receiving element 110 has a function of detecting light 22. The light emitting element 190R has a function of emitting red light 21R. The light emitting element 190G has a function of emitting green light 21G.

[0207] The light emitting element 190R and the light receiving element 110 have the same configuration. Specifically, the light emitting element 190R and the light receiving element 110 have a pixel electrode, a common layer 112, a light emitting layer 193R, an active layer 183, a common layer 114, and a common electrode 115. Note that although the light emitting layer 193R and the active layer 183 are depicted as one layer in FIG. 8C and other drawings, the light emitting layer 193R and the active layer 183 are separate layers.

[0208] The light emitting element 190G includes a pixel electrode 191, a common layer 112, a light emitting layer 193G, a common layer 114, and a common electrode 115.

[0209] In the display device 10C, the light receiving element 110 and the light emitting element 190R have a common configuration with the light emitting element 190G, except that the active layer 183 and the light emitting layer 193R of the light receiving element 110 and the light emitting element 190R and the light emitting layer 193G of the light emitting element 190G are separately manufactured. However, the configurations of the light receiving element 110 and the light emitting elements 190G and 190R are not limited to this.

[0210] [Display device 10D] FIG. 9A shows a cross-sectional view of a display device 10D.

[0211] The display device 10D differs from the display device 10A in that it does not have a protective layer 195 and in that it has a lens 149.

[0212] The display device of this embodiment does not need to have a protective layer on the light receiving element 110 and the light emitting element 190. In Fig. 9A, the common electrode 115 and the substrate 152 are bonded together by the adhesive layer 142.

[0213] The display device of the present embodiment may have a lens 149. The lens 149 is provided at a position overlapping with the light receiving element 110. In the display device 10D, the lens 149 is provided in contact with the substrate 152. The lens 149 of the display device 10D has a convex surface on the substrate 151 side.

[0214] When both the light-shielding layer BM and the lens 149 are formed on the same surface of the substrate 152, the order of formation does not matter. Although Fig. 9A shows an example in which the lens 149 is formed first, the light-shielding layer BM may be formed first. In Fig. 9A, the edge of the lens 149 is covered by the light-shielding layer BM.

[0215] The display device 10D is configured such that the light 22 is incident on the light receiving element 110 via the lens 149. When the lens 149 is included, the imaging range of the light receiving element 110 can be narrowed compared to when the lens 149 is not included, and the imaging range of the light receiving element 110 can be prevented from overlapping with that of the adjacent light receiving element 110. This allows a clear image with less blurring to be captured. In addition, when the imaging range of the light receiving element 110 is the same, when the lens 149 is included, the size of the pinhole (corresponding to the size of the opening of the light shielding layer BM overlapping with the light receiving element 110 in FIG. 9A) can be made larger compared to when the lens 149 is not included. Therefore, by including the lens 149, the amount of light incident on the light receiving element 110 can be increased.

[0216] Furthermore, lenses 149 having a convex surface on the substrate 152 side may be provided in contact with the upper surface of protective layer 195. Furthermore, a lens array may be provided on the display surface side of substrate 152 (the side opposite to the surface on the substrate 151 side). The lenses of the lens array are provided at positions overlapping with light receiving elements 110. It is preferable that a light-shielding layer BM is provided on the surface of substrate 152 on the substrate 151 side.

[0217] As a method for forming lenses used in the display device of this embodiment, lenses such as microlenses may be formed directly on a substrate or a light receiving element, or a lens array such as a microlens array that is separately manufactured may be bonded to the substrate.

[0218] [Display device 10E] FIG. 9B shows a cross-sectional view of the display device 10E.

[0219] The display device 10E differs from the display device 10B in that it does not have the substrate 151 and the substrate 152, but has the substrate 153, the substrate 154, the adhesive layer 155, and the insulating layer 212.

[0220] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by an adhesive layer 142.

[0221] The display device 10E is manufactured by transferring the insulating layer 212, the transistor 41, the transistor 42, the light receiving element 110, the light emitting element 190, and the like, which are formed over a manufacturing substrate, onto a substrate 153. The substrate 153 and the substrate 154 each preferably have flexibility. This can increase the flexibility of the display device 10E. For example, the substrate 153 and the substrate 154 each preferably include a resin. Furthermore, a film having high optical isotropy may be used for the substrate of the display device of this embodiment.

[0222] [Display device 10F] FIG. 9C shows a cross-sectional view of the display device 10F.

[0223] The display device 10F differs from the display device 10C in that it does not have the partition wall 216 but has the partition wall 217.

[0224] It is preferable that the partition 217 absorbs light emitted by the light emitting element. For example, a black matrix can be formed by using a resin material containing a pigment or a dye as the partition 217. In addition, by using a brown resist material, the partition 217 can be formed of a colored insulating layer.

[0225] Light emitted by the light-emitting element 190 may be reflected by the substrate 152 and the partition 217, and the reflected light may enter the light-receiving element 110. Furthermore, light emitted by the light-emitting element 190 may pass through the partition 217 and be reflected by a transistor, wiring, or the like, and the reflected light may enter the light-receiving element 110. The light is absorbed by the partition 217, and thus it is possible to prevent such reflected light from entering the light-receiving element 110. This makes it possible to reduce noise and increase the sensitivity of a sensor using the light-receiving element 110.

[0226] It is preferable that the partition 217 absorbs at least the wavelength of light detected by the light receiving element 110. For example, when the light receiving element 110 detects green light 21G emitted by the light emitting element 190G, it is preferable that the partition 217 absorbs at least green light. For example, if the partition 217 has a red color filter, it can absorb green light and prevent reflected light from entering the light receiving element 110.

[0227] A colored layer that absorbs light may be provided in contact with one or both of the upper and side surfaces of the light-transmitting partition. The colored layer preferably absorbs light emitted by the light-emitting element. As the colored layer, for example, a black matrix can be formed using a resin material containing a pigment or a dye. In addition, the colored layer can be formed of a colored insulating layer by using a brown resist material.

[0228] It is preferable that the colored layer absorbs at least the wavelength of light detected by the light receiving element 110. For example, when the light receiving element 110 detects green light 21G emitted by the light emitting element 190G, it is preferable that the colored layer absorbs at least green light. For example, if the colored layer has a red color filter, it can absorb green light and prevent reflected light from entering the light receiving element 110.

[0229] The colored layers absorb stray light generated within the display device 10F, thereby reducing the amount of stray light incident on the light receiving element 110. This reduces noise and increases the sensitivity of the sensor using the light receiving element 110.

[0230] In the display device of this embodiment, the colored layer is disposed between the light receiving element 110 and the light emitting element 190. This makes it possible to suppress stray light incident on the light receiving element 110 from the light emitting element 190.

[0231] A more detailed configuration of the display device according to one embodiment of the present invention will be described below with reference to Fig. 10 to Fig. 14. Fig. 10 to Fig. 14 mainly show a display device to which the configuration of Fig. 3B described in Configuration Example 1 is applied, but the configuration described in Configuration Example 2 or Configuration Example 3 can also be applied to the display device according to one embodiment of the present invention.

[0232] [Display device 100A] FIG. 10 shows a perspective view of the display device 100A, and FIG. 11 shows a cross-sectional view of the display device 100A.

[0233] The display device 100A has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 10, the substrate 152 is indicated by a dashed line.

[0234] The display device 100A has a display unit 162, a circuit 164, wiring 165, etc. Fig. 10 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 100A. Therefore, the configuration shown in Fig. 10 can also be said to be a display module having the display device 100A, an IC, and an FPC.

[0235] The circuit 164 can be, for example, a scanning line driver circuit.

[0236] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0237] 10 shows an example in which an IC 173 is provided on a substrate 151 by a chip on glass (COG) method or a chip on film (COF) method. For example, an IC having a scanning line driving circuit or a signal line driving circuit can be used as the IC 173. Note that the display device 100A and the display module may be configured without an IC. Also, the IC may be mounted on an FPC by a COF method or the like.

[0238] Figure 11 shows an example of a cross section of the display device 100A shown in Figure 10, cutting a portion of the area including the FPC 172, a portion of the area including the circuit 164, a portion of the area including the display unit 162, and a portion of the area including the end portion.

[0239] A display device 100A shown in FIG. 11 includes a transistor 201, a transistor 205, a transistor 206, a transistor 207, a light-emitting element 190B, a light-emitting element 190G, a light-receiving element 110, and the like between a substrate 151 and a substrate 152.

[0240] The substrate 152 and the insulating layer 214 are bonded via an adhesive layer 142. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light emitting element 190 and the light receiving element 110. In FIG. 11, a space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (nitrogen, argon, or the like), and a hollow sealing structure is applied. The adhesive layer 142 may be provided overlapping the light emitting element 190. In addition, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142.

[0241] The light-emitting element 190B has a layered structure in which a pixel electrode 191B, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 191B is connected to a conductive layer 222b of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling driving of the light-emitting element 190B. An end of the pixel electrode 191B is covered with a partition wall 216. The pixel electrode 191B contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0242] The light-emitting element 190G has a layered structure in which a pixel electrode 191G, a common layer 112, a light-emitting layer 193G, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 191G is connected to a conductive layer 222b of a transistor 207 through an opening provided in the insulating layer 214. The transistor 207 has a function of controlling driving of the light-emitting element 190G. An end of the pixel electrode 191G is covered with a partition wall 216. The pixel electrode 191G contains a material that reflects visible light.

[0243] The light receiving element 110 has a layered structure in which a pixel electrode 181, a common layer 112, an active layer 183, a light emitting layer 193B, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 181 is electrically connected to a conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end of the pixel electrode 181 is covered with a partition wall 216. The pixel electrode 181 contains a material that reflects visible light.

[0244] Light emitted by the light emitting element 190 is emitted towards the substrate 152. Light is incident on the light receiving element 110 via the substrate 152 and the space 143. The substrate 152 is preferably made of a material that is highly transparent to visible light.

[0245] The pixel electrode 181, the pixel electrode 191B, and the pixel electrode 191G can be manufactured using the same material and in the same process. The common layer 112, the common layer 114, and the common electrode 115 are used in common by the light receiving element 110 and the light emitting element 190 of each color. The light receiving element 110 has a configuration in which an active layer 183 is added to the configuration of the light emitting element 190B. The light receiving element 110 and the light emitting element 190G can have the same configuration except for the configurations of the active layer 183 and the light emitting layer 193G. This allows the light receiving element 110 to be built into the display device 100A without significantly increasing the number of manufacturing processes.

[0246] A light-shielding layer BM is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer BM has openings at positions overlapping the light receiving element 110 and the light emitting element 190. By providing the light-shielding layer BM, the range in which the light receiving element 110 detects light can be controlled. Furthermore, by having the light-shielding layer BM, it is possible to prevent light from being directly incident on the light receiving element 110 from the light emitting element 190 without passing through an object. Therefore, a sensor with low noise and high sensitivity can be realized.

[0247] A transistor 201, a transistor 205, a transistor 206, and a transistor 207 are all formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0248] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistors. The insulating layer 214 is provided to cover the transistors and functions as a planarizing layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0249] It is preferable that at least one of the insulating layers covering the transistors is made of a material that is difficult for impurities such as water and hydrogen to diffuse into. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistors from the outside, thereby improving the reliability of the display device.

[0250] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. As the inorganic insulating film, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used. Also, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film may be used. Also, two or more of the above insulating films may be stacked.

[0251] Here, the organic insulating film often has a lower barrier property than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display device 100A. This makes it possible to suppress impurities from entering through the organic insulating film from the end of the display device 100A. Alternatively, the organic insulating film may be formed so that the end of the organic insulating film is located inside the end of the display device 100A, so that the organic insulating film is not exposed at the end of the display device 100A.

[0252] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0253] 11, an opening is formed in the insulating layer 214. This makes it possible to prevent impurities from entering the display unit 162 from the outside through the insulating layer 214, even when an organic insulating film is used for the insulating layer 214. This makes it possible to improve the reliability of the display device 100A.

[0254] The transistor 201, the transistor 205, the transistor 206, and the transistor 207 each have a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a conductive layer 222a and a conductive layer 222b functioning as a source and a drain, a semiconductor layer 231, an insulating layer 213 functioning as a gate insulating layer, and a conductive layer 223 functioning as a gate. Here, the same hatched pattern is applied to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0255] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. In addition, either a top-gate type or a bottom-gate type transistor may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0256] The transistors 201, 205, 206, and 207 each have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and supplied with the same signal to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.

[0257] The crystallinity of a semiconductor material used in a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially having a crystalline region) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0258] The semiconductor layer of the transistor preferably contains a metal oxide (also referred to as an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single crystal silicon).

[0259] The semiconductor layer preferably contains, for example, indium, M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0260] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer.

[0261] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, In:M:Zn=4:2:3 or a composition thereabout, In:M:Zn=4:2:4.1 or a composition thereabout, In:M:Zn=5:1:3 or a composition thereabout, In:M:Zn=5:1:6 or a composition thereabout, In:M:Zn=5:1:7 or a composition thereabout, In:M:Zn=5:1:8 or a composition thereabout, In:M:Zn=6:1:6 or a composition thereabout, In:M:Zn=5:2:5 or a composition thereabout, etc. The term "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0262] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, it includes the case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, it includes the case where, when the atomic ratio of In is 5, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, it includes the case where, when the atomic ratio of In is 1, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is more than 0.1 and 2 or less.

[0263] The transistors included in the circuit 164 and the transistors included in the display portion 162 may have the same structure or different structures. The transistors included in the circuit 164 may all have the same structure or may have two or more types. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types.

[0264] A connection portion 204 is provided in an area of ​​the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. On the upper surface of the connection portion 204, the conductive layer 166 obtained by processing the same conductive film as the pixel electrode 191 is exposed. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0265] Various optical members can be disposed on the outside of the substrate 152. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. In addition, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches due to use, an impact absorbing layer, and the like may be disposed on the outside of the substrate 152.

[0266] The substrate 151 and the substrate 152 can each be made of glass, quartz, ceramic, sapphire, resin, etc. When the substrate 151 and the substrate 152 are made of a flexible material, the flexibility of the display device can be increased.

[0267] As the adhesive layer, various curing adhesives such as a photo-curing adhesive such as an ultraviolet curing adhesive, a reaction curing adhesive, a heat curing adhesive, and an anaerobic adhesive can be used. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. In particular, a material with low moisture permeability such as epoxy resin is preferable. A two-liquid mixed resin may also be used. An adhesive sheet or the like may also be used.

[0268] The connection layer 242 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0269] The light emitting element 190 may be of a top emission type, a bottom emission type, a dual emission type, or the like. A conductive film that transmits visible light is used for the electrode on the side from which light is extracted. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted.

[0270] The light-emitting element 190 has at least a light-emitting layer 193. The light-emitting element 190 may further have a layer containing a substance with high hole injection properties, a substance with high hole transport properties, a hole blocking material, a substance with high electron transport properties, a substance with high electron injection properties, a bipolar substance (a substance with high electron transport properties and hole transport properties), or the like, as a layer other than the light-emitting layer 193. For example, the common layer 112 preferably has one or both of a hole injection layer and a hole transport layer. For example, the common layer 114 preferably has one or both of an electron transport layer and an electron injection layer.

[0271] Either a low molecular weight compound or a high molecular weight compound may be used for the common layer 112, the light emitting layer 193, and the common layer 114, and may contain an inorganic compound. The layers constituting the common layer 112, the light emitting layer 193, and the common layer 114 can be formed by a deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0272] The light-emitting layer 193 is a layer containing a light-emitting substance. The light-emitting layer 193 can have one or more types of light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. In addition, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0273] The active layer 183 of the light receiving element 110 includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors including organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor of the active layer is shown. By using an organic semiconductor, the light emitting layer 193 of the light emitting element 190 and the active layer 183 of the light receiving element 110 can be formed by the same method (for example, vacuum deposition method), which is preferable because the manufacturing equipment can be shared.

[0274] The active layer 183 is made of an n-type semiconductor material such as fullerene (e.g., C 60 , C 70 Examples of the p-type semiconductor material of the active layer 183 include an electron-accepting organic semiconductor material such as copper(II) phthalocyanine (CuPc) or a derivative thereof. Examples of the p-type semiconductor material of the active layer 183 include an electron-donating organic semiconductor material such as copper(II) phthalocyanine (CuPc) or tetraphenyldibenzoperiflanthene (DBP).

[0275] For example, the active layer 183 is preferably formed by co-evaporation of an n-type semiconductor and a p-type semiconductor.

[0276] Materials that can be used for the gate, source, and drain of a transistor as well as conductive layers such as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys containing such metals as main components, etc. Films containing these materials can be used as a single layer or a laminated structure.

[0277] As the conductive material having light transmitting properties, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene can be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing the metal materials can be used. Alternatively, nitrides of the metal materials (for example, titanium nitride) may be used. Note that when using metal materials or alloy materials (or their nitrides), it is preferable to make them thin enough to have light transmitting properties. Also, a stacked film of the above materials can be used as the conductive layer. For example, it is preferable to use a stacked film of an alloy of silver and magnesium and indium tin oxide, because the conductivity can be increased. These can also be used for conductive layers such as various wirings and electrodes constituting a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of display elements.

[0278] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0279] [Display device 100B] FIG. 12A shows a cross-sectional view of the display device 100B.

[0280] The display device 100B differs from the display device 100A mainly in that it has a lens 149 and a protective layer 195. Detailed description of the same configuration as the display device 100A will be omitted.

[0281] By providing a protective layer 195 covering the light receiving element 110 and the light emitting element 190, impurities such as water can be prevented from entering the light receiving element 110 and the light emitting element 190, thereby improving the reliability of the light receiving element 110 and the light emitting element 190.

[0282] In a region 228 near the end of the display device 100B, it is preferable that the insulating layer 215 and the protective layer 195 contact each other through the opening in the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 contact each other. This makes it possible to suppress impurities from entering the display unit 162 from the outside through the organic insulating film. Therefore, it is possible to improve the reliability of the display device 100B.

[0283] 12B shows an example of a three-layer structure of the protective layer 195. In FIG 12B, the protective layer 195 has an inorganic insulating layer 195a on the common electrode 115, an organic insulating layer 195b on the inorganic insulating layer 195a, and an inorganic insulating layer 195c on the organic insulating layer 195b.

[0284] The end of the inorganic insulating layer 195a and the end of the inorganic insulating layer 195c extend outward beyond the end of the organic insulating layer 195b and are in contact with each other. The inorganic insulating layer 195a is in contact with the insulating layer 215 (inorganic insulating layer) through an opening in the insulating layer 214 (organic insulating layer). This allows the insulating layer 215 and the protective layer 195 to surround the light receiving element 110 and the light emitting element 190, thereby improving the reliability of the light receiving element 110 and the light emitting element 190.

[0285] In this way, the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends further outward than the end of the organic insulating film.

[0286] A lens 149 is provided on the surface of the substrate 152 facing the substrate 151. The lens 149 has a convex surface facing the substrate 151. The lens 149 is provided so as to overlap the light receiving region of the light receiving element 110. This can improve the sensitivity and accuracy of the sensor using the light receiving element 110.

[0287] The lens 149 preferably has a refractive index of 1.3 or more and 2.5 or less. The lens 149 can be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin can be used for the lens 149. Also, a material containing at least one of an oxide and a sulfide can be used for the lens 149.

[0288] Specifically, a resin containing chlorine, bromine, or iodine, a resin containing a heavy metal atom, a resin containing an aromatic ring, a resin containing sulfur, or the like can be used for the lens 149. Alternatively, a material containing a resin and nanoparticles of a material having a higher refractive index than the resin can be used for the lens 149. Titanium oxide, zirconium oxide, or the like can be used for the nanoparticles.

[0289] In addition, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, an oxide containing indium and tin, or an oxide containing indium, gallium, and zinc can be used for the lens 149. Alternatively, zinc sulfide or the like can be used for the lens 149.

[0290] In the display device 100B, the protective layer 195 and the substrate 152 are bonded together by an adhesive layer 142. The adhesive layer 142 is provided so as to overlap the light receiving element 110 and the light emitting element 190, respectively, and a solid sealing structure is applied to the display device 100B.

[0291] [Display device 100C] FIG. 13A shows a cross-sectional view of the display device 100C.

[0292] The display device 100C differs from the display device 100B in the structure of the transistors.

[0293] The display device 100C includes a transistor 208, a transistor 209, and a transistor 210 over a substrate 151.

[0294] The transistor 208, the transistor 209, and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer having a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0295] The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0296] A pixel electrode 191B of the light emitting element 190B is electrically connected to one of a pair of low resistance regions 231n of the transistor 208 via a conductive layer 222b.

[0297] The pixel electrode 181 of the light receiving element 110 is electrically connected to the other of the pair of low resistance regions 231n of the transistor 209 via the conductive layer 222b.

[0298] 13A shows an example in which the insulating layer 225 covers the upper surface and side surface of the semiconductor layer. On the other hand, in FIG. 13B, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in FIG. 13B can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 13B, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through the openings in the insulating layer 215. Furthermore, an insulating layer 218 may be provided to cover the transistor.

[0299] [Display device 100D] FIG. 14 shows a cross-sectional view of a display device 100D.

[0300] The display device 100D differs from the display device 100C in that it has a colored layer 148a.

[0301] The color layer 148 a has a portion in contact with the upper surface of the pixel electrode 181 of the light receiving element 110 and a portion in contact with the side surface of the partition wall 216 .

[0302] The colored layer 148a absorbs stray light generated within the display device 100D, thereby reducing the amount of stray light incident on the light receiving element 110. This reduces noise and increases the sensitivity of the sensor using the light receiving element 110.

[0303] Display device 100D also differs from display device 100C in that display device 100D does not include substrate 151 and substrate 152, but includes substrate 153, substrate 154, adhesive layer 155, and insulating layer 212.

[0304] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by an adhesive layer 142.

[0305] The display device 100D is manufactured by transferring the insulating layer 212, the transistor 208, the transistor 209, the transistor 210, the light receiving element 110, the light emitting element 190B, and the like, which are formed on a manufacturing substrate, onto a substrate 153. Each of the substrate 153 and the substrate 154 is preferably flexible. This can increase the flexibility of the display device 100D.

[0306] For the insulating layer 212, the inorganic insulating film that can be used for the insulating layers 211 and 215 can be used.

[0307] Moreover, the display device 100C shows an example in which the lens 149 is not provided, while the display device 100D shows an example in which the lens 149 is provided. The lens 149 can be provided as appropriate depending on the application of the sensor, etc.

[0308] [Metal oxides] Metal oxides that can be used for the semiconductor layer will be described below.

[0309] In this specification and the like, metal oxides containing nitrogen may also be collectively referred to as metal oxides. Metal oxides containing nitrogen may also be referred to as metal oxynitrides. For example, metal oxides containing nitrogen, such as zinc oxynitride (ZnON), may be used for the semiconductor layer.

[0310] In this specification, etc., the term CAAC (c-axis aligned crystal) and CAC (Cloud-Aligned Composite) may be used. CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration.

[0311] For example, the semiconductor layer can be made of a cloud-aligned composite (CAC)-oxide semiconductor (OS).

[0312] CAC-OS or CAC-metal oxide has a conductive function in a part of the material and an insulating function in a part of the material, and has a function as a semiconductor as a whole. When CAC-OS or CAC-metal oxide is used in a semiconductor layer of a transistor, the conductive function is a function of flowing electrons (or holes) that become carriers, and the insulating function is a function of not flowing electrons that become carriers. By making the conductive function and the insulating function act complementarily, it is possible to impart a switching function (on / off function) to CAC-OS or CAC-metal oxide. By separating the respective functions in CAC-OS or CAC-metal oxide, it is possible to maximize both functions.

[0313] Moreover, the CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, in the material, the conductive region and the insulating region may be separated at the nanoparticle level. In addition, the conductive region and the insulating region may be unevenly distributed in the material. In addition, the conductive region may be observed to be connected in a cloud shape with a blurred periphery.

[0314] In addition, in the CAC-OS or CAC-metal oxide, the conductive regions and the insulating regions may each be dispersed in the material with a size of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm.

[0315] In addition, the CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, the CAC-OS or CAC-metal oxide is composed of a component having a wide gap due to an insulating region and a component having a narrow gap due to a conductive region. In this configuration, when carriers are caused to flow, the carriers mainly flow in the component having the narrow gap. In addition, the component having the narrow gap acts complementarily on the component having the wide gap, and carriers also flow in the component having the wide gap in conjunction with the component having the narrow gap. Therefore, when the above CAC-OS or CAC-metal oxide is used in the channel formation region of a transistor, a high current driving force in the on state of the transistor, that is, a large on-current and a high field effect mobility can be obtained.

[0316] That is, CAC-OS or CAC-metal oxide can also be called a matrix composite or a metal matrix composite.

[0317] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors, such as c-axis aligned crystalline oxide semiconductors (CAAC-OS), polycrystalline oxide semiconductors, nanocrystalline oxide semiconductors (nc-OS), amorphous-like oxide semiconductors (a-like OS), and amorphous oxide semiconductors.

[0318] CAAC-OS has a c-axis orientation and a distorted crystal structure in which multiple nanocrystals are connected in the ab-plane direction. The distortion refers to a portion where the lattice orientation changes between a region with a uniform lattice arrangement and a region with a different uniform lattice arrangement in the region where multiple nanocrystals are connected.

[0319] Nanocrystals are basically hexagonal, but may be non-regular hexagonal. In addition, the lattice arrangement may be pentagonal or heptagonal due to the distortion. In CAAC-OS, it is difficult to confirm clear grain boundaries even in the vicinity of the distortion. In other words, it is found that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is because CAAC-OS can tolerate distortion due to the fact that the arrangement of oxygen atoms in the ab-plane direction is not dense and the bond distance between atoms changes due to the substitution of metal elements.

[0320] CAAC-OS also tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium and oxygen (hereinafter, In layer) and a layer containing element M, zinc, and oxygen (hereinafter, (M, Zn) layer) are stacked. Note that indium and element M can be substituted for each other, and when element M in an (M, Zn) layer is substituted for indium, it can also be represented as an (In, M, Zn) layer. When indium in an In layer is substituted for element M, it can also be represented as an (In, M) layer.

[0321] CAAC-OS is a metal oxide with high crystallinity. On the other hand, it is difficult to confirm clear crystal boundaries in CAAC-OS, so it is said that the decrease in electron mobility caused by crystal boundaries is unlikely to occur. In addition, since the crystallinity of metal oxides can be decreased by the inclusion of impurities or the generation of defects, CAAC-OS is unlikely to have impurities or defects (oxygen vacancies (V O : It is also called oxygen vacancy. ) Therefore, metal oxides with CAAC-OS have stable physical properties. Therefore, metal oxides with CAAC-OS are resistant to heat and highly reliable.

[0322] The nc-OS has periodic atomic arrangement in a microscopic region (for example, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). In addition, the nc-OS does not show regularity in the crystal orientation between different nanocrystals. Therefore, no orientation is seen throughout the film. Therefore, depending on the analysis method, the nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor.

[0323] Indium-gallium-zinc oxide (hereinafter referred to as IGZO), a type of metal oxide containing indium, gallium, and zinc, may have a stable structure when made into the above-mentioned nanocrystals. In particular, since IGZO tends to have difficulty in crystal growth in the atmosphere, it may be structurally more stable when made into small crystals (for example, the above-mentioned nanocrystals) rather than large crystals (here, crystals of several mm or several cm).

[0324] The a-like OS is a metal oxide having a structure between the nc-OS and an amorphous oxide semiconductor. The a-like OS has a pore or low-density region. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS.

[0325] Oxide semiconductors (metal oxides) have various structures, each of which has different characteristics. The oxide semiconductor of one embodiment of the present invention may have two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, an nc-OS, and a CAAC-OS.

[0326] The metal oxide film functioning as the semiconductor layer can be formed using either one or both of an inert gas and an oxygen gas. The flow rate ratio of oxygen (oxygen partial pressure) during the formation of the metal oxide film is not particularly limited. However, in order to obtain a transistor with high field effect mobility, the flow rate ratio of oxygen (oxygen partial pressure) during the formation of the metal oxide film is preferably 0% or more and 30% or less, more preferably 5% or more and 30% or less, and even more preferably 7% or more and 15% or less.

[0327] The energy gap of the metal oxide is preferably 2 eV or more, more preferably 2.5 eV or more, and further preferably 3 eV or more. By using a metal oxide having such a wide energy gap, the off-state current of the transistor can be reduced.

[0328] The substrate temperature during deposition of the metal oxide film is preferably 350° C. or lower, more preferably room temperature or higher and 200° C. or lower, and further preferably room temperature or higher and 130° C. or lower. When the substrate temperature during deposition of the metal oxide film is room temperature, productivity can be increased, which is preferable.

[0329] The metal oxide film can be formed by a sputtering method, or by other methods such as PLD, PECVD, thermal CVD, ALD, and vacuum deposition.

[0330] As described above, the display device of this embodiment has a light receiving element and a light emitting element in the display portion, and the display portion has both a function of displaying an image and a function of detecting light. This allows the electronic device to be made smaller and lighter than when a sensor is provided outside the display portion or the display device. In addition, a more multifunctional electronic device can be realized by combining the display device with a sensor provided outside the display portion or the display device.

[0331] At least one layer of the light receiving element provided between a pair of electrodes can be made to have a common structure with the light emitting element (EL element). For example, all layers of the light receiving element other than the active layer can be made to have a common structure with the light emitting element (EL element). That is, the light emitting element and the light receiving element can be formed on the same substrate by simply adding a process of forming an active layer to the manufacturing process of the light emitting element. In addition, the pixel electrode and the common electrode of the light receiving element and the light emitting element can be formed from the same material and in the same process. In addition, the manufacturing process of the display device can be simplified by manufacturing a circuit electrically connected to the light receiving element and a circuit electrically connected to the light emitting element from the same material and in the same process. In this way, a display device with a high convenience can be manufactured by incorporating a light receiving element without a complicated process.

[0332] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in the case where a plurality of configuration examples are shown in one embodiment mode in this specification, the configuration examples can be combined as appropriate.

[0333] (Embodiment 2) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0334] A display device according to one embodiment of the present invention includes a first pixel circuit having a light-receiving element and a second pixel circuit having a light-emitting element, the first pixel circuit and the second pixel circuit being arranged in a matrix.

[0335] FIG. 15A shows an example of a first pixel circuit having a light receiving element, and FIG. 15B shows an example of a second pixel circuit having a light emitting element.

[0336] 15A includes a light receiving element PD, a transistor M1, a transistor M2, a transistor M3, a transistor M4, and a capacitance element C1. Here, an example is shown in which a photodiode is used as the light receiving element PD.

[0337] The cathode of the light receiving element PD is electrically connected to the wiring V1, and the anode is electrically connected to one of the source and drain of the transistor M1. The gate of the transistor M1 is electrically connected to the wiring TX, and the other of the source and drain is electrically connected to one electrode of the capacitance element C1, one of the source and drain of the transistor M2, and the gate of the transistor M3. The gate of the transistor M2 is electrically connected to the wiring RES, and the other of the source and drain is electrically connected to the wiring V2. The source and drain of the transistor M3 is electrically connected to the wiring V3, and the other of the source and drain is electrically connected to one of the source and drain of the transistor M4. The gate of the transistor M4 is electrically connected to the wiring SE, and the other of the source and drain is electrically connected to the wiring OUT1.

[0338] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When the light receiving element PD is driven with a reverse bias, a potential lower than the potential of the wiring V1 is supplied to the wiring V2. The transistor M2 is controlled by a signal supplied to the wiring RES, and has a function of resetting the potential of the node connected to the gate of the transistor M3 to the potential supplied to the wiring V2. The transistor M1 is controlled by a signal supplied to the wiring TX, and has a function of controlling the timing at which the potential of the node changes according to the current flowing through the light receiving element PD. The transistor M3 functions as an amplifying transistor that outputs according to the potential of the node. The transistor M4 is controlled by a signal supplied to the wiring SE, and functions as a selection transistor for reading out the output according to the potential of the node in an external circuit connected to the wiring OUT1.

[0339] 15B includes a light-emitting element EL, a transistor M5, a transistor M6, a transistor M7, and a capacitor C2. Here, an example is shown in which a light-emitting diode is used as the light-emitting element EL. In particular, it is preferable to use an organic EL element as the light-emitting element EL.

[0340] The transistor M5 has a gate electrically connected to the wiring VG, one of its source and drain electrically connected to the wiring VS, and the other of its source and drain electrically connected to one electrode of the capacitor C2 and the gate of the transistor M6. One of the source and drain of the transistor M6 is electrically connected to the wiring V4, and the other is electrically connected to the anode of the light-emitting element EL and one of the source and drain of the transistor M7. The transistor M7 has a gate electrically connected to the wiring MS, and the other of its source and drain electrically connected to the wiring OUT2. The cathode of the light-emitting element EL is electrically connected to the wiring V5.

[0341] A constant potential is supplied to the wiring V4 and the wiring V5. The anode side of the light-emitting element EL can be set to a high potential, and the cathode side can be set to a lower potential than the anode side. The transistor M5 is controlled by a signal supplied to the wiring VG, and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. The transistor M6 also functions as a drive transistor for controlling the current flowing through the light-emitting element EL according to the potential supplied to the gate. When the transistor M5 is in a conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M6, and the light emission luminance of the light-emitting element EL can be controlled according to the potential. The transistor M7 is controlled by a signal supplied to the wiring MS, and has a function of outputting the potential between the transistor M6 and the light-emitting element EL to the outside via the wiring OUT2.

[0342] The wiring V1 to which the cathode of the light receiving element PD is electrically connected and the wiring V5 to which the cathode of the light emitting element EL is electrically connected can be in the same layer and have the same potential.

[0343] In the display device of the present embodiment, an image may be displayed by making the light-emitting element emit light in a pulsed manner. By shortening the driving time of the light-emitting element, it is possible to reduce the power consumption of the display device and suppress heat generation. In particular, organic EL elements are suitable because they have excellent frequency characteristics. The frequency can be, for example, 1 kHz or more and 100 MHz or less.

[0344] Here, it is preferable that the transistors M1, M2, M3, and M4 in the pixel circuit PIX1, and the transistors M5, M6, and M7 in the pixel circuit PIX2 are transistors that use a metal oxide (oxide semiconductor) in the semiconductor layer in which a channel is formed.

[0345] A transistor using a metal oxide, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows the charge stored in the capacitor connected in series to the transistor to be held for a long period of time. Therefore, it is preferable to use transistors using an oxide semiconductor for the transistor M1, the transistor M2, and the transistor M5 connected in series to the capacitor C1 or the capacitor C2 in particular. In addition, by using transistors using an oxide semiconductor for the other transistors as well, the manufacturing cost can be reduced.

[0346] Alternatively, the transistors M1 to M7 may each be a transistor in which silicon is used as a semiconductor in which a channel is formed. In particular, the use of silicon with high crystallinity, such as single crystal silicon or polycrystalline silicon, is preferable because high field-effect mobility can be achieved and faster operation can be achieved.

[0347] Alternatively, a structure in which an oxide semiconductor is used for at least one of the transistors M1 to M7 and silicon is used for the remaining transistors may be used.

[0348] Note that although the transistors are depicted as n-channel transistors in FIGS. 15A and 15B, p-channel transistors can also be used.

[0349] The transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are preferably formed side by side on the same substrate. In particular, it is preferable that the transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are mixed and periodically arranged in one region.

[0350] In addition, it is preferable to provide one or more layers having one or both of a transistor and a capacitor at a position overlapping with the light receiving element PD or the light emitting element EL, which can reduce the effective area occupied by each pixel circuit and realize a high-definition display unit.

[0351] This embodiment mode can be combined with other embodiment modes as appropriate.

[0352] (Embodiment 3) In this embodiment, a method for driving a display device of one embodiment of the present invention will be described with reference to FIGS.

[0353] In this embodiment, the case where the display device of one embodiment of the present invention functions as a touch panel will be described.

[0354] Since high resolution is required for capturing fingerprint images, it is preferable that the image data captured using the light receiving element is read out individually for each pixel. On the other hand, when functioning as a touch panel, a high resolution is not required compared to fingerprint authentication, but the read operation must be performed at high speed.

[0355] For example, the driving frequency can be increased by performing touch detection on multiple pixels at once. For example, the number of pixels to be read simultaneously can be appropriately determined to be 4 pixels (2×2 pixels), 9 pixels (3×3 pixels), or 16 pixels (4×4 pixels).

[0356] FIG. 16A shows an example in which imaging data of light receiving elements PD included in a plurality of pixels is read out collectively.

[0357] One pixel 300 has a light receiving element PD, a sub-pixel R that emits red light, a sub-pixel G that emits green light, and a sub-pixel B that emits blue light. In FIG. 16A, an example is shown in which the unit 310 has nine pixels 300 (3×3 pixels), but the number of pixels that the unit 310 has is not particularly limited. The pixels 300 included in the same unit 310 simultaneously have their imaging data read out. For example, first, the imaging data of the unit 310a is read out, and then the imaging data of the unit 310b is read out. This makes it possible to reduce the number of reads and increase the driving frequency compared to the case where imaging data is read out individually for each pixel. In addition, since the imaging data of the unit 310a is data obtained by adding up the imaging data of a plurality of pixels 300 (here, nine pixels 300), it is possible to increase the sensitivity compared to the case where imaging is performed pixel by pixel.

[0358] Alternatively, touch detection may be performed using only some of the pixels. For example, the number of pixels used for touch detection may be determined as appropriate, such as 1 pixel per 4 pixels (2×2 pixels), 1 pixel per 100 pixels (10×10 pixels), or 1 pixel per 900 pixels (30×30 pixels).

[0359] FIG. 16B shows an example in which touch detection is performed using only some of the pixels.

[0360] One pixel 300 has a light receiving element PD, a sub-pixel R that emits red light, a sub-pixel G that emits green light, and a sub-pixel B that emits blue light. The target pixel 320 to be read out is only the pixel 300 surrounded by a dashed line. In FIG. 16B, an example is shown in which the target pixel 320 used for touch detection is one pixel per nine pixels (3×3 pixels), but the number of target pixels 320 is not particularly limited. First, the imaging data of the target pixel 320a is read out, and then the imaging data of the target pixel 320b is read out. The imaging data is not read out from the pixel 300 between the target pixel 320a and the target pixel 320b. This makes it possible to reduce the number of reads and increase the driving frequency compared to the case where the imaging data of all pixels is read out one by one.

[0361] Note that multiple pixels 300 may be used in turn as the target pixel 320. For example, when one pixel out of nine pixels is used as the target pixel 320, the target pixels 320 may be shifted by one row or one column, and three pixels may be used in turn as the target pixel 320. Also, all nine pixels may be used in turn as the target pixel 320.

[0362] The display device of one embodiment of the present invention preferably has two or more operation modes of the light receiving element, and these operation modes are switchable between each other. For example, it is preferable that the display device be switchable between a mode in which all pixels are read out individually and a mode in which a plurality of pixels are read out collectively. Alternatively, it is preferable that the display device be switchable between a mode in which all pixels are read out and a mode in which only some pixels are read out. This allows a fingerprint to be captured with high resolution, and a touch to be detected at a high drive frequency when the image is displayed.

[0363] In addition, when performing touch detection, it is preferable to eliminate the influence of ambient light that causes noise.

[0364] For example, the influence of ambient light can be eliminated by periodically turning on and off the light-emitting element in some pixels and acquiring the difference in the detection intensity of the light-receiving element when it is turned on and off (not turned on). It is preferable to provide a plurality of pixels that are turned on and off repeatedly within a range that does not affect the image displayed on the display device. It is also preferable to turn on and off the light-emitting element repeatedly for each frame, such as by switching between turned-on pixels and turned-off pixels in odd-numbered frames and even-numbered frames ... The color of the light emitted when turned on is not particularly limited.

[0365] In FIG. 17A, the pixels 330a and 330d are turned off, and the pixels 330b and 330c are turned on. In FIG. 17B, the pixels 330a and 330d are turned on, and the pixels 330b and 330c are turned off.

[0366] Since pixel 330b detects ambient light, the detection intensity of the light receiving element does not change whether the light source is on or off. On the other hand, since pixel 330d detects reflected light from finger 340, the detection intensity of the light receiving element changes whether the light emitting element is on or off. The influence of ambient light can be eliminated by utilizing the difference in detection intensity between when the light is on and when the light is off.

[0367] As described above, the display device of the present embodiment can be driven in either a mode in which imaging is performed for each unit or a mode in which imaging is performed for each light receiving element. For example, when high speed operation is required, the mode in which imaging is performed for each unit can be used. When high resolution imaging is required, the mode in which imaging is performed for each pixel (each light receiving element) can be used. By changing the driving mode according to the application, the functionality of the display device can be improved.

[0368] This embodiment mode can be combined with other embodiment modes as appropriate.

[0369] (Embodiment 4) In this embodiment, electronic devices according to one embodiment of the present invention will be described with reference to FIGS.

[0370] The electronic device of this embodiment includes the display device of one embodiment of the present invention. For example, the display device of one embodiment of the present invention can be applied to a display portion of an electronic device. The display device of one embodiment of the present invention has a function of detecting light, and therefore can perform biometric authentication or detect contact or proximity in the display portion. This can improve the functionality, convenience, and the like of the electronic device.

[0371] Examples of electronic devices include electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and audio playback devices.

[0372] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0373] The electronic device of the present embodiment can have various functions, such as a function of displaying various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, time, etc., a function of executing various software (programs), a wireless communication function, a function of reading out a program or data recorded on a recording medium, etc.

[0374] Electronic device 6500 shown in FIG. 18A is a portable information terminal that can be used as a smartphone.

[0375] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0376] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0377] FIG. 18B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0378] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0379] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by an adhesive layer (not shown).

[0380] In an area outside the display unit 6502, a part of the display panel 6511 is folded back, and the folded back part is connected to an FPC 6515. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0381] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while suppressing the thickness of the electronic device. In addition, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0382] 19A shows an example of a television device. A television device 7100 has a display unit 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0383] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0384] 19A can be operated using an operation switch provided on the housing 7101 or a separate remote control 7111. Alternatively, a touch sensor may be provided on the display unit 7000, and the television unit 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control 7111 may have a display unit that displays information output from the remote control 7111. Using an operation key or a touch panel provided on the remote control 7111, it is possible to operate the channel and the volume, and to operate the video displayed on the display unit 7000.

[0385] The television device 7100 includes a receiver and a modem. The receiver can receive general television broadcasts. By connecting to a wired or wireless communication network via the modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers) information communication can be performed.

[0386] 19B shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display unit 7000 is incorporated in the housing 7211.

[0387] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0388] 19C and 19D show an example of digital signage.

[0389] 19C includes a housing 7301, a display unit 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0390] 19D shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pole 7401.

[0391] 19C and 19D, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0392] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it catches people's attention, which can increase the advertising effect of, for example, advertisements.

[0393] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used for providing information such as route information or traffic information, usability can be improved by intuitive operation.

[0394] 19C and 19D, it is preferable that the digital signage 7300 or the digital signage 7400 can be linked to an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user via wireless communication. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Furthermore, the display on the display unit 7000 can be switched by operating the information terminal 7311 or the information terminal 7411.

[0395] In addition, a game can be executed on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). This allows an unspecified number of users to participate in and enjoy the game at the same time.

[0396] The electronic device shown in Figures 20A to 20F has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0397] The electronic device shown in Fig. 20A to Fig. 20F has various functions. For example, it can have a function of displaying various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function of displaying a calendar, date or time, a function of controlling processing by various software (programs), a wireless communication function, a function of reading and processing a program or data recorded on a recording medium, etc. The functions of the electronic device are not limited to these, and it can have various functions. The electronic device may have multiple display units. In addition, the electronic device may have a function of providing a camera or the like to capture still images and videos and store them on a recording medium (external or built-in to the camera), a function of displaying the captured images on the display unit, etc.

[0398] The electronic device shown in FIGS. 20A to 20F will be described in detail below.

[0399] FIG. 20A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. The mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on a plurality of surfaces. FIG. 20A shows an example in which three icons 9050 are displayed. Information 9051 shown in a dashed rectangle can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming e-mail, SNS, and phone calls, titles of e-mail and SNS, sender names, date and time, time, remaining battery level, and antenna reception strength. Alternatively, icons 9050 and the like may be displayed at the position where the information 9051 is displayed.

[0400] 20B is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and decide, for example, whether or not to answer a call.

[0401] FIG. 20C is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch. The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free conversation by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0402] 20D to 20F are perspective views showing a foldable mobile information terminal 9201. FIG. 20D is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 20F is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 20E is a perspective view of a state in the middle of changing from one of FIG. 20D and FIG. 20F to the other. The mobile information terminal 9201 has excellent portability in a folded state, and has excellent viewability of the display due to a seamless wide display area in an unfolded state. The display unit 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0403] This embodiment mode can be combined with other embodiment modes as appropriate. EXAMPLES

[0404] In this example, a light-emitting element that can be used in a display device of one embodiment of the present invention was manufactured and evaluated, and the results are described. Note that an element that functions as both a light-emitting element and a light-receiving element is hereinafter referred to as a light-emitting element.

[0405] In this example, two light-receiving and light-emitting elements (Device 1 and Device 2) were fabricated. The light-receiving and light-emitting elements fabricated in this example have a common structure with the light-emitting element (organic EL element).

[0406] The chemical formulas of the materials used in this example are shown below.

[0407] [ka]

[0408] The specific configuration of the light-receiving and light-receiving element of this example is shown in Table 1. Device 1 was fabricated using a layered structure of a light-emitting element 47R emitting red (R) light and a light-receiving element 46 shown in FIG. 7A. Device 1 has a layered structure that can be fabricated by replacing the hole transport layer of the light-emitting element with the active layer of the light-receiving element. Device 2 was fabricated using a layered structure of a light-emitting element 47R emitting red (R) light and a light-receiving element 46 shown in FIG. 7B. Device 2 has a layered structure that can be fabricated by adding an active layer of a light-receiving element to the light-emitting element.

[0409] [Table 1]

[0410] The first electrode was formed by depositing a film of an alloy of silver (Ag), palladium (Pd) and copper (Cu) (Ag-Pd-Cu (APC)) by sputtering to a thickness of 100 nm, and then depositing a film of indium tin oxide containing silicon oxide (ITSO) by sputtering to a thickness of 100 nm.

[0411] The hole injection layer was formed by co-evaporating 3-[4-(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPPn) and molybdenum oxide in a weight ratio of PCPPn:molybdenum oxide = 2: 1. The thickness of the hole injection layer was formed to be 15 nm.

[0412] The active layer is fullerene (C 70 ) and tetraphenyldibenzoperiflanthene (abbreviation: DBP) in a weight ratio of C 70 The active layer was formed by co-evaporation so that the ratio of D:DBP was 9:1. The active layer was formed to a thickness of 60 nm.

[0413] A hole transport layer was not provided in Device 1, but was provided in Device 2. The hole transport layer was made of N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF) and was evaporated to a thickness of 70 nm.

[0414] The light-emitting layer was formed by co-evaporation of 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), PCBBiF, and bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedionato-κ2O,O')iridium(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]) in a weight ratio of 0.8:0.2:0.06 (=2mDBTBPDBq-II:PCBBiF:[Ir(dmdppr-P)2(dibm)]) to a thickness of 70 nm.

[0415] The electron transport layer was formed by successively depositing 2mDBTBPDBq-II to a thickness of 10 nm and 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) to a thickness of 10 nm.

[0416] The electron injection layer was formed by vapor deposition using lithium fluoride (LiF) to a thickness of 1 nm.

[0417] The second electrode was formed by co-evaporation of silver (Ag) and magnesium (Mg) with a volume ratio of 10:1 to a thickness of 10 nm, and then indium tin oxide (ITO) was formed by sputtering to a thickness of 40 nm.

[0418] In this manner, the light emitting / receiving element of this example was fabricated.

[0419] [Light-emitting properties] First, the characteristics of the light emitting / receiving element as a light emitting element (characteristics when a forward bias is applied) were evaluated. Figure 21 shows the voltage-luminance characteristics of the light emitting / receiving element. Figure 22 shows the luminance-external quantum efficiency characteristics of the light emitting / receiving element.

[0420] It was confirmed that both Device 1 and Device 2 functioned normally as light-emitting devices. In particular, Device 2, which had a hole transport layer between the active layer and the light-emitting layer, exhibited high external quantum efficiency.

[0421] [Photodetector characteristics] Next, the characteristics of the light-receiving / emitting element as a light-receiving element (characteristics when a reverse bias is applied) were evaluated. Figure 23 shows the wavelength dependence of the light-receiving sensitivity of the light-receiving / emitting element. The measurement conditions were a voltage of -6 V and a light intensity of 10 μW / cm 2 The applied voltage is usually a positive bias voltage applied to an EL device. In other words, the positive voltage is when the first electrode is at a high potential and the second electrode is at a low potential.

[0422] It was confirmed that both Device 1 and Device 2 functioned normally as light-receiving elements.

[0423] As described above, in this example, a light receiving / emitting element having a common structure to a light emitting element (organic EL element) was fabricated, and good characteristics were obtained as both a light emitting element and a light receiving element.

[0424] This embodiment has demonstrated that the device 1 and the device 2 can each operate as a light-emitting element and a light-receiving element. Therefore, it has been demonstrated that the configuration of the device 1 or the device 2 can be commonly used for the light-emitting element 47R and the light-receiving element 46. [Explanation of symbols]

[0425] C1: capacitive element, C2: capacitive element, IR: light emitting element, M1: transistor, M2: transistor, M3: transistor, M4: transistor, M5: transistor, M6: transistor, M7: transistor, OUT1: wiring, OUT2: wiring, PD: light receiving element, PIX1: pixel circuit, PIX2: pixel circuit, V1: wiring, V2: wiring, V3: wiring, V4: wiring, V5: wiring, 10A: display device, 10B: display device, 10C: display device, 10D: display device, 10E: display device, 10F: display device, 21B: light, 21G: light, 21R: light, 22: light, 23a: light , 23b: reflected light, 41: transistor, 42: transistor, 46: light receiving element, 47: light emitting element, 47B: light emitting element, 47G: light emitting element, 47R: light emitting element, 50A: display device, 50B: display device, 51: substrate, 52: finger, 53: layer having light receiving element, 55: layer having transistor, 57: layer having light emitting element, 59: substrate, 100A: display device, 100B: display device, 100C: display device, 100D: display device, 110: light receiving element, 112: common layer, 114: common layer, 115: common electrode, 142: adhesive layer, 143: space, 148a: colored layer, 149: Lens, 151: substrate, 152: substrate, 153: substrate, 154: substrate, 155: adhesive layer, 162: display unit, 164: circuit, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 181: pixel electrode, 182: buffer layer, 183: active layer, 184: buffer layer, 190: light-emitting element, 190B: light-emitting element, 190G: light-emitting element, 190R: light-emitting element, 191: pixel electrode, 191B: pixel electrode, 191G: pixel electrode, 192: buffer layer, 192B: buffer layer, 192G: buffer layer, 192R: buffer layer, 193: light-emitting layer, 193B: light-emitting layer, 193G: light-emitting layer, 193R: light-emitting layer, 193Y: light-emitting layer, 194: buffer layer, 194B: buffer layer, 194G: buffer layer, 194R: buffer layer, 195: protective layer, 195a: inorganic insulating layer, 195b: organic insulating layer, 195c: inorganic insulating layer, 201: transistor, 204: connection portion, 205: transistor, 206: transistor, 207: transistor, 208: transistor, 209: transistor, 210: transistor, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 216: partition wall, 217: partition wall,218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 228: region, 231: semiconductor layer, 300: pixel, 310: unit, 310a: unit, 310b: unit, 320: target pixel, 320a: target pixel, 320b: target pixel, 330a: pixel, 330b: pixel, 330c: pixel, 330d: pixel, 340 Finger, 231i: channel formation region, 231n: low resistance region, 242: connection layer, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: battery, 7000: display unit, 7100: television device, 7101: housing, 7103: stand, 7111: remote control device, 7200: notebook personal computer, 7211: housing, 7212: keyboard, 7213: pointing device, 7214: external connection port, 7300: digital signage, 7301: housing, 7303: speaker, 7311: information terminal, 7400: digital signage, 7401: pillar, 7411: information terminal, 9000: housing, 9001: display unit, 9003: speaker, 9005: operation key, 9006: connection terminal, 9007: sensor, 9008: microphone, 9050: icon, 9051: information, 9052: information, 9053: information, 9054: information, 9055: hinge, 9101: portable information terminal, 9102: portable information terminal, 9200: portable information terminal, 9201: portable information terminal,

Claims

1. A display unit is provided. the display unit includes a light receiving element, a first light emitting element, and a second light emitting element; the light receiving element has a first pixel electrode, an active layer located on the first pixel electrode, and a common electrode located on the active layer; the first light-emitting element has a second pixel electrode, a first light-emitting layer located on the second pixel electrode, and the common electrode located on the first light-emitting layer; the second light-emitting element has a third pixel electrode, a second light-emitting layer located on the third pixel electrode, and the common electrode located on the second light-emitting layer; the active layer has a region overlapping the second pixel electrode above the first light-emitting layer, the first light-emitting layer has a region overlapping the first pixel electrode below the active layer; the first light-emitting layer comprises a light-emitting material that emits a first color; the active layer includes an organic compound that absorbs light having a shorter wavelength than the first color light, the first color light is extracted to the outside via the active layer and the common electrode; The light receiving element has a function of detecting light that is incident from the outside via the common electrode and has a wavelength that is absorbed by the organic compound.

2. A display unit is provided. the display unit includes a light receiving element, a first light emitting element, and a second light emitting element; the light receiving element has a first pixel electrode, an active layer located on the first pixel electrode, and a common electrode located on the active layer; the first light-emitting element has a second pixel electrode, a first light-emitting layer located on the second pixel electrode, and the common electrode located on the first light-emitting layer; the second light-emitting element has a third pixel electrode, a second light-emitting layer located on the third pixel electrode, and the common electrode located on the second light-emitting layer; the active layer has a region overlapping the second pixel electrode above the first light-emitting layer, the first light-emitting layer has a region overlapping the first pixel electrode below the active layer and a region overlapping the third pixel electrode; the first light-emitting layer comprises a light-emitting material that emits a first color; the active layer includes an organic compound that absorbs light having a shorter wavelength than the first color light, the first color light is extracted to the outside via the active layer and the common electrode; The light receiving element has a function of detecting light that is incident from the outside via the common electrode and has a wavelength that is absorbed by the organic compound.

3. In claim 1 or 2, The first light-emitting layer comprises a light-emitting material that emits red light as the first color.

4. In claim 1 or 2, The first light-emitting layer comprises a light-emitting material that emits green light as the first color.

5. In any one of claims 1 to 4, the first pixel electrode has a laminated structure of a first reflective electrode and a first transparent electrode on the first reflective electrode, the second pixel electrode has a laminated structure of a second reflective electrode and a second transparent electrode on the second reflective electrode, A display device, wherein the first transparent electrode and the second transparent electrode have different thicknesses.

Images