Wearable Sensor

Abstract

To provide a wearable sensor having enhanced light receiving sensitivity.SOLUTION: A wearable sensor worn by a subject, has a supporting board, and a plurality of sensor elements arranged on the supporting board. The plurality of sensor elements each have a light emitting part as an organic light emitting diode or an inorganic light emitting diode, and a reflected light receiving part for measuring an amount of light emitted from the light emitting part and reflected in a living body of the subject. Preferably, at least a part of the reflected light receiving part does not overlap with the light emitting part in a planar view.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The following disclosure relates to wearable sensors.

Background Art

[0002] Due to the increasing emphasis on health, wearable sensors that can easily measure information regarding one's physical condition have attracted attention from the perspectives of improving lifestyle habits, early detection of diseases, and physical condition management.

[0003] For example, Patent Document 1 discloses a monitoring device adapted to be removably attachable to a subject's body, the device comprising a measurement unit having at least two light emitting sources and at least one sensor for detecting light beams emitted from the at least two light emitting sources, and a control device coupled to the measurement unit and configured to measure and analyze physiological signs of the subject.

[0004] Further, Patent Document 2 discloses a measuring device comprising a light source that emits light of a predetermined wavelength, a polarizer that converts the light emitted from the light source into linearly polarized light, a modulator that modulates the polarization direction of the linearly polarized light, a plurality of mirrors arranged on each side of a polygon that is partially open-ringed along the outer periphery of a biological object to be measured, the mirrors totally reflecting the light modulated by the modulator toward the object to be measured and transmitting the light through the interior of the object to be measured along the outer periphery of the object to be measured, an analyzer that separates scattered light scattered in the object to be measured from the transmitted light based on the polarization direction of the transmitted light from the object to be measured, and a detector that detects the transmitted light from which the scattered light has been separated by the analyzer.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0006] FIG. 9 is a schematic cross-sectional view showing the measurement unit of Patent Document 1. FIG. 10 is a schematic cross-sectional view for explaining light reflection in a living body. The direction of the broken-line arrow in FIGS. 9 and 10 indicates the direction of the light beam. For example, the measurement unit 300R of Patent Document 1 shown in FIG. 9 is placed adjacent to the skin 30 of a subject. A light beam is emitted from a light source 320R into the skin 30 so that the light beam penetrates the skin 30 and is reflected from the blood vessel 31 toward the sensor 310R. The difference in data between the emitted beam and the received (reflected) beam provides an indication regarding radiation absorption by the blood in the blood vessel 31, and shows the characteristics of the blood in the blood vessel 31 and blood measurement values by a non-invasive procedure. Further, the measurement unit 300R includes an ultrasonic unit 340R capable of transmitting and receiving ultrasonic signals.

[0007] Biological sensors using laser light or light-emitting diodes (LEDs: Light Emitting Diodes) have been put into practical use also like the measurement unit of Patent Document 1 shown in FIG. 9. However, since a light-emitting diode has a size of about several millimeters per one, securing a space for arranging the light-emitting diodes has been a problem in conventional biological sensors. Therefore, it has been difficult to arrange many light-emitting light sources and light-receiving parts in conventional biological sensors, and the number of light sources and light-receiving parts provided in conventional biological sensors is at the level of several, and it has been difficult to obtain sufficient light-receiving sensitivity. Further, as shown in FIG. 10, since the reflected light in a living body is scattered, only weak light can be received, and sufficient light-receiving sensitivity has not been obtained.

[0008] Patent Documents 1 and 2 do not disclose a wearable sensor with enhanced light-receiving sensitivity.

[0009] The present invention has been made in view of the above situation, and an object thereof is to provide a wearable sensor with enhanced light-receiving sensitivity. [Means for Solving the Problem]

[0010] (1) One embodiment of the present invention is a wearable sensor worn by a subject, which includes a support substrate and a plurality of sensor elements disposed on the support substrate. Each of the plurality of sensor elements includes a light emitting portion that is an organic light emitting diode or an inorganic light emitting diode, and a reflected light receiving portion that measures the amount of light emitted from the light emitting portion and reflected in the subject's living body.

[0011] (2) Further, an embodiment of the present invention is a wearable sensor that, in addition to the configuration of (1) above, at least a part of the reflected light receiving portion does not overlap with the light emitting portion in a plan view.

[0012] (3) Further, an embodiment of the present invention is a wearable sensor that, in addition to the configuration of (1) or (2) above, the reflected light receiving portion includes, in order from the support substrate side, a switching element for receiving reflected light and a sensor portion for receiving reflected light. The sensor portion for receiving reflected light includes, in order from the support substrate side, a lower electrode for receiving reflected light, a photoelectric conversion layer for receiving reflected light, and an upper electrode for receiving reflected light.

[0013] (4) Further, an embodiment of the present invention is a wearable sensor that, in addition to the configuration of (3) above, the switching element for receiving reflected light includes a semiconductor layer for receiving reflected light containing at least one of amorphous silicon, low-temperature polysilicon, and indium gallium zinc oxide.

[0014] (5) Further, an embodiment of the present invention is a wearable sensor that, in addition to the configuration of (3) or (4) above, the switching element for receiving reflected light has a double gate structure.

[0015] (6) Further, in a certain embodiment of the present invention, in addition to the configuration of (1), (2), (3), (4), or (5) above, the wearable sensor further includes a light emitting and light receiving unit that measures the amount of light emitted from the light emitting unit and not passing through the living body of the subject.

[0016] (7) Further, in a certain embodiment of the present invention, in addition to the configuration of (6) above, the light emitting and light receiving unit has, in order from the support substrate side, a switching element for light emitting and light receiving, and a sensor unit for light emitting and light receiving. The sensor unit for light emitting and light receiving has, in order from the support substrate side, a lower electrode for light emitting and light receiving, a photoelectric conversion layer for light emitting and light receiving, and an upper electrode for light emitting and light receiving.

[0017] (8) Further, in a certain embodiment of the present invention, in addition to the configuration of (7) above, the switching element for light emitting and light receiving includes a semiconductor layer for light emitting and light receiving containing at least one of amorphous silicon, low-temperature polysilicon, and indium gallium zinc oxide.

[0018] (9) Further, in a certain embodiment of the present invention, in addition to the configuration of (7) or (8) above, the switching element for light emitting and light receiving has a double gate structure.

[0019] (10) Further, in a certain embodiment of the present invention, in addition to the configuration of (6), (7), (8), or (9) above, the light emitting unit includes a reflective electrode and a light emitting layer in order from the support substrate side. The light emitting and light receiving unit includes a photoelectric conversion layer for light emitting and light receiving. The wearable sensor includes, in order from the support substrate side, the photoelectric conversion layer for light emitting and light receiving, the reflective electrode, and the light emitting layer. In a plan view, at least a part of the light emitting layer overlaps with the photoelectric conversion layer for light emitting and light receiving without passing through the reflective electrode.

[0020] (11) Further, in an embodiment of the present invention, in addition to the configuration of (6), (7), (8), (9), or (10) above, the light-emitting unit includes a reflective electrode and a light-emitting layer in order from the support substrate side, the light-emitting light-receiving unit includes a photoelectric conversion layer for receiving light-emitting light, and the wearable sensor includes, in order from the support substrate side, the photoelectric conversion layer for receiving light-emitting light, the reflective electrode, and the light-emitting layer. In a plan view, an opening is provided in at least a part of a region where the reflective electrode overlaps with the photoelectric conversion layer for receiving light-emitting light. Wearable sensor.

[0021] (12) Further, in an embodiment of the present invention, in addition to the configuration of (1), (2), (3), (4), (5), (6), (7), (8), (9), (10), or (11) above, the light-emitting unit includes a reflective electrode and a light-emitting layer in order from the support substrate side. In a plan view, at least a part of the light-emitting layer overlaps with the reflective electrode. Wearable sensor.

[0022] (13) Further, in an embodiment of the present invention, in addition to the configuration of (1), (2), (3), (4), (5), (6), (7), (8), (9), (10), (11), or (12) above, the support substrate is a flexible substrate. Wearable sensor.

Effect of the Invention

[0023] According to the present invention, a wearable sensor with enhanced light-receiving sensitivity can be provided.

Brief Description of the Drawings

[0024]

Figure 1

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Figure 10

Modes for Carrying Out the Invention

[0025] Hereinafter, embodiments of the present invention will be described. The present invention is not limited to the content described in the following embodiments, and design changes can be appropriately made within the scope that satisfies the configuration of the present invention. In the following description, the same parts or parts having the same functions are commonly and appropriately used with the same reference numerals among different drawings, and the repeated description thereof will be omitted as appropriate. Each aspect of the present invention may be appropriately combined without departing from the gist of the present invention.

[0026] (Embodiment 1) FIG. 1 is a perspective schematic view of the wearable sensor according to Embodiment 1. The wearable sensor 1 of this embodiment is a wearable sensor worn by a subject, and includes a support substrate 10 and a plurality of sensor elements 20 disposed on the support substrate 10. Each of the plurality of sensor elements 20 includes a light emitting portion 21 that is an organic light emitting diode (OLED: Organic Light Emitting Diod) or an inorganic light emitting diode (inorganic LED (Light Emitting Diod)), and a reflected light receiving portion 22 that measures the amount of light emitted from the light emitting portion 21 and reflected in the subject's living body. By adopting such a mode, it is possible to suppress the arrangement space of each light emitting portion 21, and it is possible to arrange more sensor elements 20 in an array in the wearable sensor 1. As a result, the light receiving sensitivity can be increased. Further, by using the support substrate 10 as a flexible substrate (also referred to as a flexible base material), the wearability can be enhanced.

[0027] More specifically, the wearable sensor 1 of this embodiment realizes a biosensor by arranging, in an array, a light emitting element applying an OLED display corresponding to the light emitting portion 21 and a semiconductor sensor applying an X-ray sensor corresponding to the reflected light receiving portion 22, thereby solving the above problems. By arranging high-definition light emitting elements and light receiving elements in an array having a certain area, it is possible to efficiently receive light reflected in the living body (including light scattered in the living body). Further, since it is hardly affected by differences in blood vessel arrangements that vary from individual to individual, the accuracy and sensitivity as a biosensor can be improved. Further, by forming the light emitting element and the semiconductor sensor on a flexible base material, a device with enhanced wearability can be realized.

[0028] As described above, in the wearable sensor 1 of the present embodiment, by applying OLED display technology and X-ray sensor technology and arranging light-emitting sources and detection sensors in an array with high definition over a certain area, the light reflected inside the living body can be efficiently received, thus improving the sensitivity. Further, by forming the sensor element 20 on a flexible substrate, a device with good wearability can be realized.

[0029] Patent Document 1 discloses a biosensor that can be installed on the human body. The biosensor disclosed in Patent Document 1 has at least two light-emitting sources and at least one detection sensor, and can measure and analyze physiological signs of the human body. The emission wavelength is a specific wavelength between 400 and 2500 nm. By data analysis, diabetes, dehydration, and medication status can be monitored.

[0030] As shown in FIG. 9, the biosensor of Patent Document 1 can only install about several light-emitting sources and detection sensors, so the light reflected inside the living body cannot be efficiently received and the sensitivity is poor. Further, since it is a rigid device, the wearability is poor.

[0031] Patent Document 2 discloses a sensor having a light source that emits light of a predetermined wavelength, a polarizer that converts the light into linearly polarized light, a mirror that reflects the light in a measurement object, and a detection unit. In the sensor of Patent Document 2, by repeating reflection, high-precision biosensing is achieved. In Patent Document 2, a strong light source and a mirror for repeating reflection are required, but since it is impossible to install a plurality of light sources and mirrors, scattered light cannot be efficiently received. Further, since reflection is repeated many times, the amount of scattered light itself also increases. Further, since it is a rigid device, the wearability is poor.

[0032] Hereinafter, the details of the wearable sensor 1 of the present embodiment will be described.

[0033] FIG. 2 is a schematic diagram for explaining an example of the function of the wearable sensor according to Embodiment 1. FIG. 3 is a schematic cross-sectional view of the wearable sensor according to Embodiment 1. The solid arrows shown in FIGS. 2 and 3 represent the emitted light from the light emitting unit, and the broken arrows represent the light reflected in the living body. As shown in FIGS. 2 and 3, the wearable sensor 1 of the present embodiment is a wearable sensor that is worn, for example, from above the skin 30 of a person or an animal and measures the state inside the living body of the subject.

[0034] The wearable sensor 1 has a plurality of sensor elements 20. Each of the plurality of sensor elements (also referred to as pixels) 20 has a light emitting unit 21 that is an OLED or an inorganic LED, and a reflected light receiving unit 22 that measures the amount of light of the light emitted from the light emitting unit 21 and reflected in the living body of the subject. The sensor elements 20 may be arranged in an array on the support substrate 10.

[0035] The support substrate 10 is not particularly limited as long as it is a substrate that supports the sensor element 20. Examples of the support substrate 10 include a flexible substrate and a glass substrate. The support substrate 10 is preferably a flexible substrate. By adopting such a mode, the flexibility of the wearable sensor 1 can be enhanced and the wearability can be improved. The flexible substrate is a film-like base material made of a synthetic resin material (for example, a polyimide-based resin, etc.) and has insulation and flexibility.

[0036] The support substrate 10 may be disposed on the side in contact with the subject or on the side opposite to the side in contact with the subject. When the support substrate 10 is disposed on the side in contact with the subject, the support substrate 10 preferably has light transmissivity. When the support substrate 10 is disposed on the side in contact with the subject, the transmittance of the support substrate 10 is, for example, 80% or more and 100% or less, preferably 90% or more and 100% or less, and more preferably 95% or more and 100% or less. The transmittance can be measured by a measurement method conforming to JIS-K-7375.

[0037] The sensor elements 20 are arranged in a matrix, for example, in one direction (e.g., the "row direction") and the direction intersecting the one direction (e.g., the "column direction"). The wearable sensor 1 has a plurality of sensor elements 20. By adopting such a mode, the light reception sensitivity can be enhanced.

[0038] The light emitting part 21 is an OLED or an inorganic LED. The light emitting part 21 may be, for example, a light emitting element applying an OLED display. The light emitting part 21 may be provided with a light emitting switching element having a function of controlling light emission.

[0039] The light emitting part 21 preferably emits light with a wavelength suitable for biosensing. For example, since near-infrared light can penetrate deep into the living body, the biosensing information obtained can be increased. The light emitting part 21 preferably emits light with a wavelength of 700 nm or more and 2500 nm or less, more preferably emits light with a wavelength of 700 nm or more and 1700 nm or less, and still more preferably emits light with a wavelength of 1000 nm or more and 1700 nm or less. Note that the light emitting part 21 may emit visible light (for example, light with a wavelength of 380 nm or more and less than 700 nm). By adopting such a mode, biosensing information that can be sensed by visible light can be obtained.

[0040] The light emitting part 21 preferably emits light with a plurality of types of wavelengths. By adopting such a mode, the biosensing information obtained can be increased. Also, the light emitting part 21 preferably changes the light quantity of the emitted light. By adopting such a mode, it becomes possible to sense by changing the light quantity, and the biosensing information obtained can be increased.

[0041] As shown in FIG. 3, the wearable sensor 1 includes a plurality of gate lines 21G for light emission extending in parallel with each other on a support substrate 10, and a plurality of source lines 21S for light emission extending in parallel with each other in a direction intersecting the plurality of gate lines 21G for light emission. The plurality of gate lines 21G for light emission and the plurality of source lines 21S for light emission are formed in a lattice pattern as a whole so as to partition each sensor element 20. A switching element 211 for light emission is provided at the intersection of the plurality of gate lines 21G for light emission and the plurality of source lines 21S for light emission.

[0042] Each light emitting unit 21 includes, in order from the support substrate 10 side, a switching element 211 for light emission, a reflective electrode 212, and a light emitting layer 213. More specifically, in order from the support substrate 10 side, it includes a switching element 211 for light emission, a first insulating film 241, a second insulating film 242, a third insulating film 243, a fourth insulating film 244, a reflective electrode 212, and a light emitting layer 213. The switching element 211 for light emission has, in order from the support substrate 10 side, a gate electrode 211G for light emission, a gate insulating film 240, a semiconductor layer 211C for light emission, a drain electrode 211D for light emission, and a source electrode 211S for light emission.

[0043] The gate insulating film 240, the first insulating film 241, the second insulating film 242, the third insulating film 243, the fourth insulating film 244, and a fifth insulating film 245 described later are an inorganic insulating film, an organic insulating film, or a laminate of the organic insulating film and the inorganic insulating film.

[0044] As the inorganic insulating film, for example, an inorganic film such as silicon nitride (SiNx), silicon oxide (SiO 2 ) (relative dielectric constant ε = 5 to 7) or a laminated film thereof can be used. The film thickness of the inorganic insulating film is, for example, 1500 Å or more and 3500 Å or less. As the organic insulating film, for example, an organic film with a small relative dielectric constant such as a photosensitive acrylic resin (relative dielectric constant ε = 2 to 5) or a laminated film thereof can be used. The film thickness of the organic insulating film is not particularly limited, but is, for example, 2 μm or more and 4 μm or less.

[0045] The gate insulating film 240, the first insulating film 241, and the third insulating film 243 are preferably inorganic insulating films such as SiN, SiO, and SiON. The second insulating film 242, the fourth insulating film 244, and the fifth insulating film are preferably acrylic resin-based organic insulating films.

[0046] The switching element 211 for light emission has a function of controlling the light emission of the light emitting layer 213. The switching element 211 for light emission is a three-terminal switch including a gate electrode 211G for light emission, a source electrode 211S for light emission, a drain electrode 211D for light emission, and a semiconductor layer 211C for light emission. Examples of the switching element 211 for light emission include a thin film transistor (TFT: Thin Film Transistor). The switching element 211 for light emission preferably has a double gate structure.

[0047] In this specification, the "gate electrode" is one of the three electrodes constituting the TFT (the remaining are the source electrode and the drain electrode), and modulates the amount of charge induced in the channel region of the semiconductor layer by the voltage applied to the gate electrode, and controls the current flowing between the source and the drain. The "source electrode" is one of the three electrodes constituting the TFT, and is an electrode that serves as a carrier supply source for the semiconductor layer of the TFT. In this specification, the "drain electrode" is one of the three electrodes constituting the TFT, and is an electrode that serves as a carrier supply destination for the semiconductor layer of the TFT.

[0048] In this specification, the "semiconductor layer" includes not only a layer having semiconductor characteristics (for example, a channel region), but also a layer obtained by subjecting a layer having semiconductor characteristics to a low-resistance treatment so that its resistivity is lower than that of the channel region (for example, a source region and a drain region). Examples of the material used for the semiconductor layer include amorphous silicon (a-Si), low temperature polysilicon (LTPS: Low Temperature Poly-Silicon), indium gallium zinc oxide (IGZO: Indium Gallium Zinc Oxide), LTPS + IGZO (TOPS), and the like.

[0049] The light-emitting semiconductor layer 211C included in the switching element 211 for light emission preferably contains at least one of LTPS and IGZO. That is, the light-emitting semiconductor layer 211C included in the switching element 211 for light emission preferably contains LTPS or IGZO. By adopting such an aspect, sufficient charge and current can be applied to the light-emitting layer. The semiconductor layer 211C included in the switching element 211 for light emission more preferably contains LTPS with high mobility or high-mobility IGZO.

[0050] The drain electrode 211D for light emission is connected to the reflective electrode 212 via the contact hole 21CH1. The source electrode 211S for light emission is connected to the corresponding source line for light emission via the contact hole 21CH2.

[0051] The reflective electrode 212 contains a metal material with high reflectivity. The reflective electrode 212 contains, for example, aluminum, an aluminum alloy, silver, or a silver alloy. The light emitted from the light-emitting layer 213 is reflected by the reflective electrode 212 and emitted toward the subject side.

[0052] The light-emitting layer 213 contains an organic light-emitting material or an inorganic light-emitting material. The light-emitting layer 213 may be a light-emitting material containing nanoparticles, or may have a structure that functions as a light-emitting element by picking and placing after dividing an LED element fabricated on an Si wafer.

[0053] When the light-emitting unit 21 is an OLED, the light-emitting layer 213 contains an organic light-emitting material. The light-emitting layer 213 containing an organic light-emitting material is also referred to as an organic light-emitting layer. The OLED can be formed by evaporation or coating. The OLED can also contain, if necessary, in addition to the light-emitting substance, additional organic substances for efficiently performing charge transport.

[0054] An OLED includes at least one organic light-emitting layer between two electrodes. For example, the OLED can include a charge injection or transport layer, such as an electron transport layer, an electron injection layer, a hole transport layer, a hole injection layer, a hole blocking layer, an electron blocking layer, etc., between the organic light-emitting layer and the electrodes. Also, if necessary, two or more OLED light-emitting units each including one or more organic light-emitting layers between two electrodes may be stacked.

[0055] The above-mentioned OLED light-emitting unit means the smallest unit that includes an organic light-emitting layer and can emit light when a voltage is applied. An intermediate conductive layer or a charge generation layer may be provided between the OLED light-emitting units. The intermediate conductive layer may be formed using a conductive material that can be used as an electrode material. Two or more stacked OLED light-emitting units may be provided to emit the same color, or may be provided to emit different colors from each other. For example, in an OLED having a stacked structure, two or more OLED light-emitting units may be provided to emit different colors from each other to emit white light.

[0056] When the light-emitting part 21 is an inorganic LED, the light-emitting layer 213 contains an inorganic light-emitting material. The light-emitting layer 213 containing an inorganic light-emitting material is also referred to as an inorganic light-emitting layer. The inorganic LED can be formed by evaporation or coating, and can also be formed by placing it on a Si wafer and then arranging it by pick-and-place. The inorganic LED formed by pick-and-place is also referred to as a micro LED. The inorganic LED can also contain, if necessary, in addition to the light-emitting substance, an additional inorganic substance for efficiently performing charge transport.

[0057] An inorganic LED includes at least one inorganic light-emitting layer between two electrodes. For example, the inorganic LED can include a charge injection or transport layer, such as an electron transport layer, an electron injection layer, a hole transport layer, a hole injection layer, a hole blocking layer, an electron blocking layer, etc., between the inorganic light-emitting layer and the electrodes. Also, if necessary, two or more inorganic LED light-emitting units each including one or more inorganic light-emitting layers between two electrodes may be stacked.

[0058] The above-mentioned inorganic LED light-emitting unit means the smallest unit that includes an inorganic light-emitting layer and can emit light when a voltage is applied. An intermediate conductive layer or a charge generation layer may be provided between the inorganic LED light-emitting units. The intermediate conductive layer may be formed using a conductive material that can be used as an electrode material. Two or more stacked inorganic LED light-emitting units may be provided to emit the same color, or may be provided to emit different colors from each other. For example, in an inorganic LED having a stacked structure, two or more inorganic LED light-emitting units may be provided to emit different colors from each other to emit white light.

[0059] Among inorganic LEDs, a micro LED has a side length of the LED chip of 100 μm or less. One side of the micro LED chip is, for example, 5 μm or more and 100 μm or less, and the thickness is, for example, 3 μm or more and 30 μm or less. The micro LED is mounted on a substrate by a pick-and-place method. The pick-and-place method is a method of picking up each of the cut chips and installing them at predetermined positions on a circuit board. By such a method, the substrate can be assembled efficiently.

[0060] The light-emitting unit 21 includes a reflective electrode 212 and a light-emitting layer 213 in order from the support substrate 10 side. In a plan view, at least a part of the light-emitting layer 213 overlaps with the reflective electrode 212. By adopting such an aspect, the light emitted from the light-emitting layer 213 is effectively reflected by the reflective electrode 212 and emitted toward the subject side. As a result, the light reception sensitivity can be further increased.

[0061] The reflected light receiving unit 22 has a function of measuring the amount of light of the light emitted from the light-emitting unit 21 and reflected in the subject's living body (including the light scattered in the living body). The reflected light receiving unit 22 is also referred to as a reflection (scattering) light receiving sensor.

[0062] FIG. 4 is an example of a circuit diagram of a reflected light receiving unit included in the wearable sensor according to Embodiment 1. As shown in FIGS. 3 and 4, the reflected light receiving unit 22 includes a sensor unit 221 for receiving reflected light, generating charges upon receiving light, and accumulating the generated charges, and a switching element 222 for reading out the charges accumulated in the sensor unit 221 for receiving reflected light.

[0063] As shown in FIG. 4, the wearable sensor 1 includes a plurality of gate lines 22G for receiving reflected light extending in parallel with each other on a support substrate 10, and a plurality of source lines 22S for receiving reflected light extending in parallel with each other in a direction intersecting the plurality of gate lines 22G for receiving reflected light. The plurality of gate lines 22G for receiving reflected light and the plurality of source lines 22S for receiving reflected light are formed in a lattice pattern as a whole so as to partition each sensor element 20. A switching element 222 for receiving reflected light is provided at the intersection of the plurality of gate lines 22G for receiving reflected light and the plurality of source lines 22S for receiving reflected light. The gate line 22G for receiving reflected light is a wiring for turning on / off the switching element 222 for receiving reflected light, and the source line 22S for receiving reflected light is a wiring for reading out the charges accumulated in the sensor unit 221 for receiving reflected light.

[0064] As shown in FIG. 3, the reflected light receiving unit 22 has a switching element 222 for receiving reflected light and a sensor unit 221 for receiving reflected light in this order from the support substrate 10 side. More specifically, the reflected light receiving unit 22 includes a switching element 222 for receiving reflected light, a first insulating film 241, a second insulating film 242, a sensor unit 221 for receiving reflected light, a third insulating film 243, a fourth insulating film 244, and a fifth insulating film 245 in this order from the support substrate 10 side.

[0065] The sensor unit 221 for receiving reflected light includes, in order from the support substrate 10 side, a lower electrode 221A for receiving reflected light, a photoelectric conversion layer 221B for receiving reflected light, and an upper electrode 221C for receiving reflected light. The sensor unit 221 for receiving reflected light has, for example, an anode electrode and a cathode electrode (the lower electrode 221A for receiving reflected light and the upper electrode 221C for receiving reflected light) and a PIN diode (the photoelectric conversion layer 221B for receiving reflected light) sandwiched therebetween. Here, a PIN diode (P-intrinsic-N Diode) is a silicon diode in which an I-type semiconductor, which is an intrinsic semiconductor with a large electrical resistance, is sandwiched between a PN junction of a P-type semiconductor and an N-type semiconductor.

[0066] The switching element 222 for receiving reflected light includes, in order from the support substrate 10 side, a gate electrode 222G for receiving reflected light, a gate insulating film 240, a semiconductor layer 222C for receiving reflected light, a drain electrode 222D for receiving reflected light, and a source electrode 222S for receiving reflected light. Examples of the switching element 222 for receiving reflected light include a thin film transistor. The switching element 222 for receiving reflected light preferably has a double gate structure.

[0067] The semiconductor layer 222C for receiving reflected light contains, for example, at least one of amorphous silicon, low-temperature polysilicon, and indium gallium zinc oxide. It is more preferable that the semiconductor layer 222C for receiving reflected light contains at least one of low-temperature polysilicon and indium gallium zinc oxide. That is, it is more preferable that the semiconductor layer 222C for receiving reflected light contains LTPS or IGZO. By adopting such an aspect, the sensing characteristics can be improved. It is still more preferable that the semiconductor layer 222C for receiving reflected light contains IGZO with a small off-leakage.

[0068] The drain electrode 222D for receiving reflected light is connected to the lower electrode 221A for receiving reflected light through the contact hole 22CH1. The source electrode 222S for receiving reflected light is connected to the source line 22S for receiving reflected light through the contact hole 22CH2.

[0069] In a plan view, it is preferable that at least a part of the reflected light receiving unit 22 does not overlap with the light emitting unit 21. By adopting such an aspect, it becomes possible to effectively receive the light reflected in the living body by the reflected light receiving unit 22, and the light receiving sensitivity can be increased.

[0070] More specifically, it is preferable that at least a part of the photoelectric conversion layer 221B for receiving reflected light provided in the reflected light receiving unit 22 does not overlap with the light emitting layer 213 provided in the light emitting unit 21. By adopting such an aspect, it becomes possible to effectively receive the light reflected in the living body by the reflected light receiving unit 22, and the light receiving sensitivity can be increased.

[0071] Furthermore, a common electrode wiring 22A for receiving reflected light is provided in parallel with each source line 22S for receiving reflected light in the reflected light receiving unit 22. One end and the other end of the common electrode wiring 22A for receiving reflected light are connected in parallel, and one end is connected to a power supply 22B for receiving reflected light that supplies a predetermined bias voltage. The sensor unit 221 for receiving reflected light is connected to the common electrode wiring 22A for receiving reflected light, and a bias voltage is applied through the common electrode wiring 22A for receiving reflected light.

[0072] A control signal for switching each switching element 222 for receiving reflected light flows through the gate line 22G for receiving reflected light. By flowing the control signal through each gate line 22G for receiving reflected light in this way, each switching element 222 for receiving reflected light is switched (turned on / turned off).

[0073] When the switching element 222 for receiving reflected light of each sensor element 20 is in an on state, an electric signal corresponding to the charge accumulated in each sensor element 20 flows through the source line 22S for receiving reflected light. More specifically, an electric signal corresponding to the amount of charge accumulated by turning on any one of the switching elements 222 for receiving reflected light of the sensor element 20 connected to the source line 22S for receiving reflected light flows through each source line 22S for receiving reflected light.

[0074] To each source line 22S for receiving reflected light, a signal detection circuit 22C for receiving reflected light that detects an electrical signal flowing out to the source line 22S for receiving reflected light is connected. Also, to each gate line 22G for receiving reflected light, a scan signal control circuit 22D for receiving reflected light that outputs a control signal for turning on / off a switching element 222 for receiving reflected light to the gate line 22G for receiving reflected light is connected. In FIG. 4, the signal detection circuit 22C for receiving reflected light and the scan signal control circuit 22D for receiving reflected light are each simplified and shown as one, but for example, a plurality of signal detection circuits 22C for receiving reflected light and scan signal control circuits 22D for receiving reflected light may be provided and the source line 22S for receiving reflected light or the gate line 22G for receiving reflected light may be connected for each predetermined book.

[0075] The signal detection circuit 22C for receiving reflected light incorporates an amplifier circuit that amplifies the input electrical signal for each source line 22S for receiving reflected light. In the signal detection circuit 22C for receiving reflected light, the electrical signal input from each source line 22S for receiving reflected light is amplified by the amplifier circuit and converted into a digital signal by an ADC (analog-digital converter).

[0076] To this signal detection circuit 22C for receiving reflected light and scan signal control circuit 22D for receiving reflected light, a predetermined process such as noise removal is performed on the digital signal converted in the signal detection circuit 22C for receiving reflected light, and a control signal indicating the timing of signal detection is output to the signal detection circuit 22C for receiving reflected light, and a control signal indicating the timing of output of the scan signal is output to the scan signal control circuit 22D for receiving reflected light, and a control unit 22E for receiving reflected light is connected.

[0077] The control unit 22E for receiving reflected light in this embodiment is composed of a microcomputer and includes a non-volatile storage unit composed of a CPU (Central Processing Unit), ROM, RAM, flash memory, etc. The control unit 22E for receiving reflected light generates an image indicated by the irradiated radiation based on the electrical signal indicating the charge information of each sensor element 20 input from the signal detection circuit 22C for receiving reflected light.

[0078] The wearable sensor 1 of this embodiment can be manufactured, for example, by the following manufacturing method. First, an IGZO-TFT is formed. The wearable sensor 1 requires a TFT for controlling the light-emitting element (the switching element 211 for light emission) and a TFT for controlling the in-vivo reflected light sensor (the switching element 222 for receiving reflected light). The number of TFTs may be increased to improve controllability. Instead of IGZO, LTSP or a-Si may be used. Even in the case of IGZO-TFT, a top-gate or double-gate TFT structure may be used.

[0079] Next, an anode electrode and a cathode electrode for the light-receiving sensor (the reflected light-receiving unit 22) (the lower electrode 221A for receiving reflected light and the upper electrode 221C for receiving reflected light) and a PIN diode (the photoelectric conversion layer 221B for receiving reflected light) sandwiched therebetween are formed. Next, a reflective electrode 212 and a light-emitting layer 213 for the light-emitting element (the light-emitting unit 21) are formed.

[0080] The wearable sensor 1 has a light-emitting element (the light-emitting unit 21) applying an OLED display to each element (each sensor element 20) and a light-receiving element (the reflected light-receiving unit 22) applying an X sensor. The plurality of sensor elements 20 are arranged in an array with high definition having a certain area. By summing up the sensing amounts of all the sensor elements 20, the light scattered in the living body can be efficiently sensed.

[0081] (Embodiment 2) In this embodiment, the features specific to this embodiment will be mainly described, and the description of the content overlapping with the above Embodiment 1 will be omitted. This embodiment is substantially the same as Embodiment 1 except that the wearable sensor 1 includes a light-emitting light-receiving unit in addition to the reflected-light receiving unit 22.

[0082] FIG. 5 is a perspective schematic view of the wearable sensor according to Embodiment 2. FIG. 6 is a schematic view for explaining an example of the function of the wearable sensor according to Embodiment 2. FIG. 7 is a cross-sectional schematic view of the wearable sensor according to Embodiment 2. FIG. 8 is an example of a circuit diagram of the light-emitting light-receiving unit included in the wearable sensor according to Embodiment 2. The solid arrows shown in FIGS. 6 and 7 represent the light emitted from the light-emitting unit, and the dashed arrows represent the light that has passed through the living body.

[0083] As shown in FIGS. 5 to 8, the wearable sensor 1 of this embodiment further includes a light-emitting light-receiving unit 23 that measures the amount of light emitted from the light-emitting unit 21 and not passing through the living body of the subject. Here, in order to realize a biosensor, it is important to detect the change amount of the difference between the amount of light emitted from the light-emitting element (light-emitting unit 21) and the amount of light reflected in the living body. Therefore, the wearable sensor 1 of this embodiment includes, for each sensor element 20, in addition to a sensor (reflected-light receiving unit 22) for receiving the light reflected in the living body, a sensor (light-emitting light-receiving unit 23) for measuring the amount of light of the light-emitting element (light-emitting unit 21). By adopting such an aspect, it becomes possible to more accurately detect changes in the living body.

[0084] More specifically, the wearable sensor 1 of the present embodiment realizes a biosensor by arranging in an array a light-emitting element that applies an OLED display corresponding to the light-emitting unit 21 and a semiconductor sensor that applies an X-ray sensor corresponding to the reflected light receiving unit 22 and the emitted light receiving unit 23, thereby solving the above problems. By arranging the high-definition light-emitting element and the light-receiving element in an array having a certain area, the light reflected in the living body can be efficiently received. In addition, since it is hardly affected by the difference in blood vessel arrangement that varies from individual to individual, the accuracy and sensitivity as a biosensor can be improved. Further, by forming the light-emitting element and the semiconductor sensor on a flexible substrate, a device with high wearability can be realized.

[0085] The emitted light receiving unit 23 has a function of measuring the amount of light emitted from the light-emitting unit 21 and not passing through the living body of the subject. The emitted light receiving unit 23 is also referred to as an emitted light receiving sensor.

[0086] As shown in FIGS. 7 and 8, the emitted light receiving unit 23 includes a sensor unit 231 for emitted light reception that receives light and generates charges and accumulates the generated charges, and a switching element 232 for emitted light reception that reads out the charges accumulated in the sensor unit 231 for emitted light reception.

[0087] As shown in FIG. 8, the wearable sensor 1 includes a plurality of gate lines 23G for emitted light reception extending in parallel with each other on a support substrate 10, and a plurality of source lines 23S for emitted light reception extending in parallel with each other in a direction intersecting the plurality of gate lines 23G for emitted light reception. The plurality of gate lines 23G for emitted light reception and the plurality of source lines 23S for emitted light reception are formed in a lattice shape as a whole so as to partition each sensor element 20. A switching element 232 for emitted light reception is provided at the intersection of the plurality of gate lines 23G for emitted light reception and the plurality of source lines 23S for emitted light reception. The gate line 23G for emitted light reception is a wiring for turning on / off the switching element 232 for emitted light reception, and the source line 23S for emitted light reception is a wiring for reading out the charges accumulated in the sensor unit 231 for emitted light reception.

[0088] As shown in FIG. 7, the light-emitting light-receiving unit 23 includes, in order from the support substrate 10 side, a switching element 232 for light-emitting light-receiving and a sensor unit 231 for light-emitting light-receiving. More specifically, the light-emitting light-receiving unit 23 includes, in order from the support substrate 10 side, a switching element 232 for light-emitting light-receiving, a first insulating film 241, a second insulating film 242, a sensor unit 231 for light-emitting light-receiving, a third insulating film 243, a fourth insulating film 244, and a fifth insulating film 245.

[0089] The sensor unit 231 for light-emitting light-receiving includes, in order from the support substrate 10 side, a lower electrode 231A for light-emitting light-receiving, a photoelectric conversion layer 231B for light-emitting light-receiving, and an upper electrode 231C for light-emitting light-receiving. The sensor unit 231 for light-emitting light-receiving has, for example, an anode electrode and a cathode electrode (the lower electrode 231A for light-emitting light-receiving and the upper electrode 231C for light-emitting light-receiving) and a PIN diode (the photoelectric conversion layer 231B for light-emitting light-receiving) sandwiched therebetween. Here, a PIN diode (P-intrinsic-N Diode) is a silicon diode in which an I-type semiconductor, which is an intrinsic semiconductor with a large electrical resistance, is sandwiched between a PN junction of a P-type semiconductor and an N-type semiconductor.

[0090] The switching element 232 for light-emitting light-receiving includes, in order from the support substrate 10 side, a gate electrode 232G for light-emitting light-receiving, a gate insulating film 240, a semiconductor layer 232C for light-emitting light-receiving, a drain electrode 232D for light-emitting light-receiving, and a source electrode 232S for light-emitting light-receiving. Examples of the switching element 232 for light-emitting light-receiving include a thin film transistor. The switching element 232 for light-emitting light-receiving preferably has a double gate structure.

[0091] The semiconductor layer 232C for light emission and light reception contains, for example, at least one of amorphous silicon, low-temperature polysilicon, and indium gallium zinc oxide. It is more preferable that the semiconductor layer 232C for light emission and light reception includes at least one of low-temperature polysilicon and indium gallium zinc oxide. That is, it is more preferable that the semiconductor layer 232C for light emission and light reception includes LTPS or IGZO. By adopting such an embodiment, the sensing characteristics can be improved. It is even more preferable that the semiconductor layer 232C for light emission and light reception includes IGZO with a small off-leakage.

[0092] The drain electrode 232D for light emission and light reception is connected to the lower electrode 231A for light emission and light reception via the contact hole 23CH1. The source electrode 232S for light emission and light reception is connected to the source line 23S for light emission and light reception via the contact hole 23CH2.

[0093] In a plan view, at least a part of the light emission and light reception part 23 preferably overlaps with the light emission part 21. By adopting such an embodiment, the light emission and light reception part 23 can more effectively receive the light emitted from the light emission part 21, and it becomes possible to more accurately detect the changes in the living body by comparing the measurement results with those of the reflected light reception part 22.

[0094] More specifically, at least a part of the photoelectric conversion layer 231B for light emission and light reception included in the light emission and light reception part 23 preferably overlaps with the light emission layer 213 included in the light emission part 21. By adopting such an embodiment, the light emission and light reception part 23 can more effectively receive the light emitted from the light emission part 21, and it becomes possible to more accurately detect the changes in the living body.

[0095] The light-emitting unit 21 includes a reflective electrode 212 and a light-emitting layer 213 in this order from the side of the support substrate 10. The light-emitting light-receiving unit 23 includes a photoelectric conversion layer 231B for light-emitting light-receiving as a light-receiving element. The wearable sensor 1 includes a photoelectric conversion layer 231B for light-emitting light-receiving, a reflective electrode 212, and a light-emitting layer 213 in this order from the side of the support substrate 10. In plan view, at least a part of the light-emitting layer 213 preferably overlaps with the photoelectric conversion layer 231B for light-emitting light-receiving without passing through the reflective electrode 212. By adopting such a mode, the amount of light emitted from the light-emitting unit 21 can be measured more accurately.

[0096] In plan view, it is preferable that 1% or more and 20% or less of the area of the light-emitting layer 213 overlaps with the photoelectric conversion layer 231B for light-emitting light-receiving without passing through the reflective electrode 212.

[0097] The light-emitting unit 21 includes a reflective electrode 212 and a light-emitting layer 213 in this order from the side of the support substrate 10. The light-emitting light-receiving unit 23 includes a photoelectric conversion layer 231B for light-emitting light-receiving as a light-receiving element. The wearable sensor 1 includes a photoelectric conversion layer 231B for light-emitting light-receiving, a reflective electrode 212, and a light-emitting layer 213 in this order from the side of the support substrate 10. The reflective electrode 212 preferably has an opening 212X provided in at least a part of the region overlapping with the photoelectric conversion layer 231B for light-emitting light-receiving in plan view. By adopting such a mode, the amount of light emitted from the light-emitting unit 21 can be measured more accurately.

[0098] Furthermore, a common electrode wiring 23A for light-emitting light-receiving is provided in the light-emitting light-receiving unit 23 in parallel with each source line 23S for light-emitting light-receiving. One end and the other end of the common electrode wiring 23A for light-emitting light-receiving are connected in parallel, and one end is connected to a power supply 23B for light-emitting light-receiving that supplies a predetermined bias voltage. The sensor unit 231 for light-emitting light-receiving is connected to the common electrode wiring 23A for light-emitting light-receiving, and a bias voltage is applied through the common electrode wiring 23A for light-emitting light-receiving.

[0099] A control signal for switching each light-emitting and light-receiving switching element 232 flows through the gate line 23G for light-emitting and light-receiving. By allowing the control signal to flow through each gate line 23G for light-emitting and light-receiving, each light-emitting and light-receiving switching element 232 is switched (turned on / off).

[0100] When the light-emitting and light-receiving switching element 232 of each sensor element 20 is in the on state, an electrical signal corresponding to the charge accumulated in each sensor element 20 flows through the source line 23S for light-emitting and light-receiving. More specifically, an electrical signal corresponding to the amount of charge accumulated by turning on any one of the light-emitting and light-receiving switching elements 232 of the sensor element 20 connected to the source line 23S for light-emitting and light-receiving flows through each source line 23S for light-emitting and light-receiving.

[0101] A signal detection circuit 23C for light-emitting and light-receiving that detects the electrical signal flowing out of each source line 23S for light-emitting and light-receiving is connected to each source line 23S for light-emitting and light-receiving. Also, a scan signal control circuit 23D for light-emitting and light-receiving that outputs a control signal for turning on / off the light-emitting and light-receiving switching element 232 is connected to each gate line 23G for light-emitting and light-receiving. In FIG. 4, the signal detection circuit 23C for light-emitting and light-receiving and the scan signal control circuit 23D for light-emitting and light-receiving are each simplified to one, but for example, a plurality of signal detection circuits 23C for light-emitting and light-receiving and scan signal control circuits 23D for light-emitting and light-receiving may be provided and the source line 23S for light-emitting and light-receiving or the gate line 23G for light-emitting and light-receiving may be connected for each predetermined unit.

[0102] The signal detection circuit 23C for light-emitting and light-receiving incorporates an amplifier circuit that amplifies the input electrical signal for each source line 23S for light-emitting and light-receiving. In the signal detection circuit 23C for light-emitting and light-receiving, the electrical signal input from each source line 23S for light-emitting and light-receiving is amplified by the amplifier circuit and converted into a digital signal by an ADC (analog-digital converter).

[0103] Connected to the signal detection circuit 23C for light emission and light reception and the scan signal control circuit 23D for light emission and light reception is a control unit 23E for light emission and light reception, which performs predetermined processing such as noise removal on the digital signal converted in the signal detection circuit 23C for light emission and light reception, outputs a control signal indicating the timing of signal detection to the signal detection circuit 23C for light emission and light reception, and outputs a control signal indicating the timing of output of the scan signal to the scan signal control circuit 23D for light emission and light reception.

[0104] The control unit 23E for light emission and light reception according to the present embodiment is configured by a microcomputer and includes a non-volatile storage unit composed of a CPU (Central Processing Unit), ROM, RAM, flash memory, etc. The control unit 23E for light emission and light reception generates an image indicated by the irradiated radiation based on the electrical signal indicating the charge information of each sensor element 20, which is input from the signal detection circuit 23C for light emission and light reception.

[0105] The wearable sensor 1 according to the present embodiment can be manufactured, for example, by the following manufacturing method. First, an IGZO-TFT is formed. The wearable sensor 1 requires at least three TFTs, namely, a TFT for controlling the light-emitting element (switching element 211 for light emission), a TFT for controlling the in-vivo reflected light sensor (switching element 222 for receiving reflected light), and a TFT for controlling the light emission and light reception sensor (switching element 232 for light emission and light reception). The number of TFTs may be increased to improve controllability. Instead of IGZO, LTSP or a-Si may be used. Even in the case of an IGZO-TFT, a top-gate or double-gate TFT structure may be employed.

[0106] Next, an anode electrode and a cathode electrode for the light-receiving sensor (reflected-light receiving unit 22 and emitted-light receiving unit) (lower electrode 221A for reflected-light reception and upper electrode 221C for reflected-light reception, and lower electrode 231A for emitted-light reception and upper electrode 231C for emitted-light reception) and a PIN diode (photoelectric conversion layer 221B for reflected-light reception and photoelectric conversion layer 231B for emitted-light reception) sandwiched therebetween are formed. Next, a reflective electrode 212 and a light-emitting layer 213 for the light-emitting element (light-emitting unit 21) are formed. At this time, an opening 212X is provided in the reflective electrode 212 so that light can pass through directly below the light-emitting layer 213. In order to ensure the light emission amount in this portion, a transparent electrode may be formed in the opening 212X.

[0107] The wearable sensor 1 includes a light-emitting element (light-emitting unit 21) that applies an OLED display to each element (each sensor element 20), and a light-receiving element (reflected-light receiving unit 22 and emitted-light receiving unit 23) that applies an X sensor. The plurality of sensor elements 20 are arranged in a high-definition array with a certain area. By summing up the sensing amounts of all the sensor elements 20, the light scattered in the living body can be efficiently sensed.

[0108] The wearable sensor 1 of the present embodiment includes a sensor ( Light-emitting and light-receiving unit 23 ) for measuring the light amount of each light-emitting element (light-emitting unit 21), and a sensor ( Reflected-light receiving unit 22 ) for measuring the reflected light in the living body. By monitoring the change amount of the difference between the two types of sensors, changes in the living body can be detected. Also, by summing up the sensing amounts of all the sensor elements 20, the light scattered in the living body can be efficiently sensed. Furthermore, by using this method, since it is not necessary to control the light emission amount (mura suppression) of each light-emitting element required in the OLED display, the number of TFT elements can be reduced and the mura suppression process is also unnecessary. Also, even if the OLED light-emitting element deteriorates, a decrease in light-receiving sensitivity can be suppressed.

[0109] Hereinafter, the effects of the present invention will be described with reference to examples and comparative examples, but the present invention is not limited to these examples.

[0110] (Example 1) The wearable sensor 1 in this example corresponds to the wearable sensor 1 in the above Embodiment 1. The wearable sensor 1 in this example is a wearable sensor worn by a subject, and includes a support substrate 10 and a plurality of sensor elements 20 disposed on the support substrate 10. The plurality of sensor elements 20 each have a light emitting portion 21 that is an OLED or an inorganic LED, and a reflected light receiving portion 22 that measures the amount of light emitted from the light emitting portion 21 and reflected in the subject's living body. The wearable sensor 1 in this example can enhance the light receiving sensitivity.

[0111] (Example 2) The wearable sensor 1 in this example corresponds to the wearable sensor 1 in the above Embodiment 2. In addition to the configuration of Embodiment 1, the wearable sensor 1 in this example further includes a light emitting light receiving portion 23 that measures the amount of light emitted from the light emitting portion 21 and not passing through the subject's living body. The wearable sensor 1 in this example can enhance the light receiving sensitivity and can more accurately detect changes in the living body.

[0112] The aspects of the present invention shown above may be appropriately combined within the scope not departing from the gist of the present invention.

Explanation of Reference Numerals

[0113] 1: Wearable sensor 10: Support substrate 20: Sensor element (pixel) 21: Light emitting portion 21G, 22G, 23G: Gate line 21S, 22S, 23S: Source line 22: Reflected light receiving portion 22A, 23A: Common electrode wiring 22B, 23B: Power supply 22C, 23C: Signal detection circuit 22D, 23D: Scan signal control circuit 22E, 23E: Control unit 23: Light emitting light receiving portion 30: Skin 31: Blood vessel 211, 222, 232: Switching element 211C, 222C, 232C: Semiconductor layer 211D, 222D, 232D: Drain electrode 211G, 222G, 232G: Gate electrode 211S, 222S, 232S: Source electrode 212: Reflective electrode 212X: Opening 213: Light-emitting layer 221, 231: Sensor section 221A, 231A: Lower electrode 221B, 231B: Photoelectric conversion layer 221C, 231C: Upper electrode 240: Gate insulating film 241, 242, 243, 244, 245: Insulating film 310R: Sensor 320R: Light source 300R: Measuring unit 340R: Ultrasonic unit

Claims

1. A wearable sensor worn by a subject, comprising: a support substrate and a plurality of sensor elements disposed on the support substrate, wherein each of the plurality of sensor elements includes: a light-emitting portion that is an organic light-emitting diode or an inorganic light-emitting diode; a reflected light receiving portion that measures the amount of light reflected by the light emitted from the light-emitting portion in the subject's living body; a light-emitted light receiving portion that measures the amount of light that has not passed through the subject's living body and is emitted from the light-emitting portion, wherein the light-emitting portion includes a reflective electrode and a light-emitting layer in this order from the support substrate side; the light-emitted light receiving portion includes a photoelectric conversion layer for receiving light-emitted light; the wearable sensor includes the photoelectric conversion layer for receiving light-emitted light, the reflective electrode, and the light-emitting layer in this order from the support substrate side; A wearable sensor, wherein in a plan view, at least a part of the light-emitting layer overlaps with the photoelectric conversion layer for receiving light-emitted light without passing through the reflective electrode.

2. A wearable sensor worn by a subject, comprising: a support substrate and a plurality of sensor elements disposed on the support substrate, wherein each of the plurality of sensor elements includes: a light-emitting portion that is an organic light-emitting diode or an inorganic light-emitting diode; a reflected light receiving portion that measures the amount of light reflected by the light emitted from the light-emitting portion in the subject's living body; a light-emitted light receiving portion that measures the amount of light that has not passed through the subject's living body and is emitted from the light-emitting portion, wherein the light-emitting portion includes a reflective electrode and a light-emitting layer in this order from the support substrate side; the light-emitted light receiving portion includes a photoelectric conversion layer for receiving light-emitted light; the wearable sensor includes the photoelectric conversion layer for receiving light-emitted light, the reflective electrode, and the light-emitting layer in this order from the support substrate side; A wearable sensor, wherein in a plan view, an opening is provided in at least a part of the region where the reflective electrode overlaps with the photoelectric conversion layer for receiving light-emitted light.

3. The wearable sensor according to claim 1 or 2, wherein in a plan view, at least a part of the reflected light receiving portion does not overlap with the light-emitting portion.

4. The reflected light receiving portion includes, in this order from the support substrate side, a switching element for receiving reflected light and a sensor portion for receiving reflected light. The sensor unit for receiving reflected light includes, in order from the support substrate side, a lower electrode for receiving reflected light, a photoelectric conversion layer for receiving reflected light, and an upper electrode for receiving reflected light. The wearable sensor according to claim 1 or 2, characterized in that.

5. The switching element for receiving reflected light includes a semiconductor layer for receiving reflected light containing at least one of amorphous silicon, low-temperature polysilicon, and indium gallium zinc oxide. The wearable sensor according to claim 4, characterized in that.

6. The switching element for receiving reflected light has a double-gate structure. The wearable sensor according to claim 4, characterized in that.

7. The light emission light receiving unit includes, in order from the support substrate side, a switching element for receiving light emission light and a sensor unit for receiving light emission light. The sensor unit for receiving light emission light includes, in order from the support substrate side, a lower electrode for receiving light emission light, a photoelectric conversion layer for receiving light emission light, and an upper electrode for receiving light emission light. The wearable sensor according to claim 1 or 2, characterized in that.

8. The switching element for receiving light emission light includes a semiconductor layer for receiving light emission light containing at least one of amorphous silicon, low-temperature polysilicon, and indium gallium zinc oxide. The wearable sensor according to claim 7, characterized in that.

9. The switching element for receiving light emission light has a double-gate structure. The wearable sensor according to claim 7, characterized in that.

10. The light emitting unit includes, in order from the support substrate side, a reflective electrode and a light emitting layer. In a plan view, at least a part of the light emitting layer overlaps with the reflective electrode. The wearable sensor according to claim 1 or 2, characterized in that.

11. The support substrate is a flexible substrate. The wearable sensor according to claim 1 or 2, characterized in that.

12. Furthermore, the wearable sensor according to claim 2, having a transparent electrode in the opening.

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