Detection device

Abstract

To provide a detection device capable of acquiring accurate data about a living body.SOLUTION: The detection device comprises: a sensor unit which has a detection area divided into a plurality of partial detection areas; and a detection unit which extracts, from among the plurality of partial detection areas, a partial detection area in which a signal intensity of data acquired in each partial detection area meets a predetermined condition, and acquires biological data of a detected body based on a detection signal detected in a biological data acquisition area including the extracted partial detection area.SELECTED DRAWING: Figure 18

Description

Technical Field

[0001] The present invention relates to a detection device.

Background Art

[0002] There is known a detection device that obtains the oxygen saturation in blood (hereinafter referred to as blood oxygen saturation (SpO2)) based on transcutaneous data obtained by irradiating light from the skin into the body and detecting the light transmitted through or reflected by arteries. The blood oxygen saturation (SpO2) is the ratio of the amount of oxygen actually bound to hemoglobin to the total amount of oxygen assuming that all hemoglobin in the blood is bound to oxygen. When obtaining the blood oxygen saturation (SpO2), for example, a pulse wave obtained by infrared light and a pulse wave obtained by red light are used (for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Transcutaneous data may not necessarily be able to obtain highly accurate data due to the distribution of blood vessels under the skin. In addition, transcutaneous data includes noise components caused by disturbances and the body movement of the subject.

[0005] An object of the present invention is to provide a detection device capable of obtaining highly accurate data regarding a living body.

Means for Solving the Problems

[0006] The detection device according to one aspect of the present invention includes a sensor unit having a detection area divided into a plurality of partial detection areas, and among the plurality of partial detection areas, a partial detection area in which the signal intensity of data acquired in each partial detection area satisfies a predetermined condition is extracted, and a detection unit that acquires biological data of a subject based on a detection signal detected in a biological data acquisition area including the extracted partial detection area.

Brief Description of the Drawings

[0007]

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MODE FOR CARRYING OUT THE INVENTION

[0008] Embodiments for carrying out the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited by the content described in the following embodiments. Further, the constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the constituent elements described below can be combined as appropriate. Also, the disclosure is merely an example, and those that can be easily conceived by those skilled in the art with appropriate modifications while maintaining the gist of the invention are naturally included in the scope of the present invention. In addition, for the purpose of making the description clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual aspect, but this is merely an example and does not limit the interpretation of the present invention. Also, in this specification and each drawing, the same reference numerals may be assigned to the same elements as those described above with respect to the previously shown drawings, and detailed descriptions may be omitted as appropriate.

[0009] FIG. 1 is a plan view showing a detection device according to an embodiment. As shown in FIG. 1, the detection device 1 includes a sensor base material 21, a sensor unit 10, a gate line drive circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source 61, and a second light source 62. In FIG. 1, an example is shown in which a plurality of first light sources 61 are provided on the first light source base material 51 and a plurality of second light sources 62 are provided on the second light source base material 52. However, the arrangement of the first light source 61 and the second light source 62 shown in FIG. 1 is merely an example and can be changed as appropriate. For example, a plurality of first light sources 61 and a plurality of second light sources 62 may be arranged on each of the first light source base material 51 and the second light source base material 52. In this case, a group including the plurality of first light sources 61 and a group including the plurality of second light sources 62 may be arranged side by side in the second direction Dy, or the first light source 61 and the second light source 62 may be alternately arranged in the second direction Dy. Also, the number of light source base materials on which the first light source 61 and the second light source 62 are provided may be one or three or more. Specific arrangement examples of the first light source 61 and the second light source 62 will be described later.

[0010] The detection device 1 is electrically connected to the host 200. The host 200 is, for example, a higher-level control device of a device (not shown) to which the detection device 1 is applied. The host 200 performs a predetermined biological information acquisition process based on the data output from the detection device 1.

[0011] A control board 121 is electrically connected to the sensor substrate 21 via a flexible printed circuit board 71. A detection circuit 48 is provided on the flexible printed circuit board 71. A control circuit 122, a power supply circuit 123, and an output circuit 126 are provided on the control board 121.

[0012] The control circuit 122 is, for example, a control IC (Control Integrated Circuit) that outputs a logic control signal. The control circuit 122 may be a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array).

[0013] The control circuit 122 supplies control signals to the sensor unit 10, the gate line drive circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. Further, the control circuit 122 supplies control signals to the first light source 61 and the second light source 62 to control the lighting or non-lighting of the first light source 61 and the second light source 62.

[0014] The power supply circuit 123 supplies voltage signals such as a sensor power supply potential VDDSNS (see FIG. 4) to the sensor unit 10, the gate line drive circuit 15, and the signal line selection circuit 16. Further, the power supply circuit 123 supplies a power supply voltage to the first light source 61 and the second light source 62.

[0015] The output circuit 126 is, for example, a USB controller IC and performs communication control between the control circuit 122 and the host 200.

[0016] The sensor substrate 21 has a detection region AA and a peripheral region GA. The detection region AA is a region where a plurality of optical sensors PD (see FIG. 4) included in the sensor unit 10 are provided. The peripheral region GA is a region between the outer periphery of the detection region AA and the end of the sensor substrate 21, and is a region where no optical sensor PD is provided.

[0017] The gate line drive circuit 15 and the signal line selection circuit 16 are provided in the peripheral region GA. Specifically, the gate line drive circuit 15 is provided in a region extending along the second direction Dy in the peripheral region GA. The signal line selection circuit 16 is provided in a region extending along the first direction Dx in the peripheral region GA, and is provided between the sensor unit 10 and the detection circuit 48.

[0018] The first direction Dx is a direction in a plane parallel to the sensor substrate 21. The second direction Dy is a direction in a plane parallel to the sensor substrate 21 and is a direction orthogonal to the first direction Dx. Note that the second direction Dy may intersect the first direction Dx without being orthogonal. The third direction Dz is a direction orthogonal to the first direction Dx and the second direction Dy, and is the normal direction of the sensor substrate 21.

[0019] The plurality of first light sources 61 are provided on the first light source substrate 51 and are arranged along the second direction Dy. The plurality of second light sources 62 are provided on the second light source substrate 52 and are arranged along the second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control substrate 121, respectively.

[0020] For the plurality of first light sources 61 and the plurality of second light sources 62, for example, inorganic LEDs (Light Emitting Diodes), organic ELs (OLEDs: Organic Light Emitting Diodes), or the like are used. The plurality of first light sources 61 and the plurality of second light sources 62 emit first light and second light having different wavelengths, respectively.

[0021] The first light emitted from the first light source 61 is reflected, for example, on the surface of a detection object such as a subject's finger or wrist and then enters the sensor unit 10. Thereby, the sensor unit 10 can detect a fingerprint by detecting the uneven shape of the surface such as the finger Fg. The second light emitted from the second light source 62 is reflected inside the finger Fg or the like, or transmitted through the finger Fg or the like, and then enters the sensor unit 10. Thereby, the sensor unit 10 can detect information regarding the living body inside a subject's finger, wrist, or the like. The information regarding the living body is, for example, the subject's pulse wave, pulse, blood vessel image, or the like. That is, the detection device 1 may be configured as a fingerprint detection device that detects fingerprints or a vein detection device that detects blood vessel patterns such as veins.

[0022] The first light may have a wavelength of 520 nm or more and 600 nm or less, for example, about 500 nm, and the second light may have a wavelength of 780 nm or more and 950 nm or less, for example, about 850 nm. In this case, the first light is blue or green visible light (blue light or green light), and the second light is infrared light. The sensor unit 10 can detect a fingerprint based on the first light emitted from the first light source 61. The second light emitted from the second light source 62 is reflected, transmitted, or absorbed inside the detection object and then enters the sensor unit 10. Thereby, the sensor unit 10 can detect biological data such as a pulse wave and a blood vessel image (blood vessel pattern) as information regarding the living body inside a subject's finger, wrist, or the like.

[0023] Alternatively, the first light may have a wavelength of 600 nm or more and 700 nm or less, for example, about 660 nm, and the second light may have a wavelength of 780 nm or more and 950 nm or less, for example, about 850 nm. In this case, based on the first light emitted from the first light source 61 and the second light emitted from the second light source 62, the sensor unit 10 can detect the blood oxygen concentration in addition to the pulse wave, pulse, and blood vessel image as information regarding the living body. Thus, the detection device 1 includes the first light source 61 and a plurality of second light sources 62, and can detect various information regarding the living body by performing detection based on the first light and detection based on the second light.

[0024] FIG. 2 is a block diagram showing a configuration example of the detection device according to the embodiment. As shown in FIG. 2, the detection device 1 further includes a detection control unit 11 and a detection unit 40.

[0025] The sensor unit 10 has a plurality of optical sensors PD. The optical sensors PD included in the sensor unit 10 are organic photodiodes (OPDs: Organic Photodiodes), and output an electrical signal corresponding to the irradiated light as a detection signal Vdet to the signal line selection circuit 16. Further, the sensor unit 10 performs detection in accordance with the gate drive signal Vgcl supplied from the gate line drive circuit 15.

[0026] The detection control unit 11 is a circuit that supplies control signals to the gate line drive circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls these operations. The detection control unit 11 supplies various control signals such as a start signal STV, a clock signal CK, and a reset signal RST1 to the gate line drive circuit 15. Further, the detection control unit 11 supplies various control signals such as a selection signal ASW to the signal line selection circuit 16. Further, the detection control unit 11 supplies various control signals to the first light source 61 and the second light source 62 to control their lighting and non-lighting, respectively.

[0027] The gate line drive circuit 15 is a circuit that drives a plurality of gate lines GCL (see FIG. 3) based on various control signals. The gate line drive circuit 15 sequentially or simultaneously selects a plurality of gate lines GCL, and supplies a gate drive signal Vgcl to the selected gate line GCL. Thereby, the gate line drive circuit 15 selects a plurality of optical sensors PD connected to the gate line GCL.

[0028] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SGL (see FIG. 3). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 electrically connects the selected signal line SGL and the detection circuit 48 based on the selection signal ASW supplied from the detection control unit 11. Thereby, the signal line selection circuit 16 outputs the detection signal Vdet of the optical sensor PD to the detection unit 40.

[0029] The detection unit 40 includes a detection circuit 48, a signal processing unit 44, a storage unit 46, and a detection timing control unit 47. The detection timing control unit 47 controls the detection circuit 48 and the signal processing unit 44 to operate synchronously based on a control signal supplied from the detection control unit 11.

[0030] Based on the detection signals of the respective optical sensors PD output from the sensor unit 10, the detection circuit 48 generates detection values of the respective optical sensors PD. The detection circuit 48 is, for example, an analog front end circuit (AFE: Analog Front End).

[0031] The detection circuit 48 is a signal processing circuit having at least the functions of a detection signal amplification unit 42 and an A / D conversion unit 43. The detection signal amplification unit 42 amplifies the detection signal Vdet. The A / D conversion unit 43 converts the analog signal output from the detection signal amplification unit 42 into a digital signal.

[0032] In the present disclosure, the signal processing unit 44 and the storage unit 46 are included in the control circuit 122.

[0033] Based on the detection values of the respective optical sensors PD output from the detection circuit 48, the signal processing unit 44 acquires biological data for generating information regarding a living body. In the present disclosure, the information regarding a living body includes a pulse wave acquired by infrared light or red light.

[0034] The storage unit 46 temporarily stores the signals processed by the signal processing unit 44. Also, in the present disclosure, in the storage unit 46, a biological data acquisition area set in the biological data acquisition area setting process flow described later and various setting information are stored when the signal processing unit 44 acquires biological data. The storage unit 46 may be, for example, in a form including a RAM (Random Access Memory), a ROM (Read Only Memory), an EEPROM (Electrically Erasable Programmable Read Only Memory), etc. Also, the storage unit 46 may be a register circuit or the like.

[0035] Next, a circuit configuration example of the detection device 1 will be described. FIG. 3 is a circuit diagram showing the detection device. As shown in FIG. 3, the sensor unit 10 has a plurality of partial detection regions PAA arranged in a matrix. Each of the plurality of partial detection regions PAA is provided with a photosensor PD.

[0036] The gate lines GCL extend in the first direction Dx and are connected to a plurality of partial detection regions PAA arranged in the first direction Dx. Further, the plurality of gate lines GCL(1), GCL(2),..., GCL(8) are arranged in the second direction Dy and are respectively connected to the gate line driving circuit 15. In the following description, when it is not necessary to distinguish and describe the plurality of gate lines GCL(1), GCL(2),..., GCL(8), they are simply represented as the gate line GCL. Also, in FIG. 3, for the sake of easy understanding of the description, eight gate lines GCL are shown, but this is merely an example, and the gate lines GCL may be arranged in M (M is a natural number, for example, M = 256) numbers.

[0037] The signal lines SGL extend in the second direction Dy and are connected to the photosensors PD of a plurality of partial detection regions PAA arranged in the second direction Dy. Further, the plurality of signal lines SGL(1), SGL(2),..., SGL(12) are arranged in the first direction Dx and are respectively connected to the signal line selection circuit 16 and the reset circuit 17. In the following description, when it is not necessary to distinguish and describe the plurality of signal lines SGL(1), SGL(2),..., SGL(12), they are simply represented as the signal line SGL.

[0038] Also, for the sake of easy understanding of the description, twelve signal lines SGL are shown, but this is merely an example, and the signal lines SGL may be arranged in N (N is a natural number, for example, N = 252) numbers. Also, in FIG. 3, the sensor unit 10 is provided between the signal line selection circuit 16 and the reset circuit 17. However, it is not limited to this, and the signal line selection circuit 16 and the reset circuit 17 may be respectively connected to the ends of the signal lines SGL in the same direction.

[0039] The gate line driving circuit 15 receives various control signals such as a start signal STV, a clock signal CK, and a reset signal RST1 from a control circuit 122 (see FIG. 1). Based on the various control signals, the gate line driving circuit 15 sequentially selects a plurality of gate lines GCL(1), GCL(2),..., GCL(8) in a time-division manner. The gate line driving circuit 15 supplies a gate driving signal Vgcl to the selected gate line GCL. As a result, the gate driving signal Vgcl is supplied to a plurality of first switching elements Tr connected to the gate line GCL, and a plurality of partial detection regions PAA arranged in the first direction Dx are selected as detection targets.

[0040] Note that the gate line driving circuit 15 may perform different driving for each detection mode of fingerprint detection and information regarding a plurality of different living bodies (such as a pulse wave, a pulse, a blood vessel image, a blood oxygen concentration, etc., hereinafter also simply referred to as "biological information"). For example, the gate line driving circuit 15 may drive a plurality of gate lines GCL bundled together.

[0041] Specifically, based on the control signal, the gate line driving circuit 15 simultaneously selects a predetermined number of gate lines GCL among the gate lines GCL(1), GCL(2),..., GCL(8). For example, the gate line driving circuit 15 simultaneously selects six gate lines GCL from GCL(1) to GCL(6) and supplies the gate driving signal Vgcl. The gate line driving circuit 15 supplies the gate driving signal Vgcl to a plurality of first switching elements Tr via the selected six gate lines GCL. As a result, block units PAG1 and PAG2 including a plurality of partial detection regions PAA arranged in the first direction Dx and the second direction Dy are each selected as detection targets. The gate line driving circuit 15 drives a predetermined number of gate lines GCL bundled together and sequentially supplies the gate driving signal Vgcl for each predetermined number of gate lines GCL.

[0042] The signal line selection circuit 16 includes a plurality of selection signal lines Lsel, a plurality of output signal lines Lout, and a third switching element TrS. The plurality of third switching elements TrS are provided corresponding to the plurality of signal lines SGL respectively. The six signal lines SGL(1), SGL(2), …, SGL(6) are connected to a common output signal line Lout1. The six signal lines SGL(7), SGL(8), …, SGL(12) are connected to a common output signal line Lout2. The output signal lines Lout1 and Lout2 are respectively connected to the detection circuit 48.

[0043] Here, the signal lines SGL(1), SGL(2), …, SGL(6) are defined as the first signal line block, and the signal lines SGL(7), SGL(8), …, SGL(12) are defined as the second signal line block. The plurality of selection signal lines Lsel are respectively connected to the gates of the third switching elements TrS included in one signal line block. Also, one selection signal line Lsel is connected to the gates of the third switching elements TrS of the plurality of signal line blocks.

[0044] Specifically, the selection signal lines Lsel1, Lsel2, …, Lsel6 are respectively connected to the third switching elements TrS corresponding to the signal lines SGL(1), SGL(2), …, SGL(6). Also, the selection signal line Lsel1 is connected to the third switching element TrS corresponding to the signal line SGL(1) and the third switching element TrS corresponding to the signal line SGL(7). The selection signal line Lsel2 is connected to the third switching element TrS corresponding to the signal line SGL(2) and the third switching element TrS corresponding to the signal line SGL(8).

[0045] The control circuit 122 (see FIG. 1) sequentially supplies the selection signal ASW to the selection signal line Lsel. Thereby, the signal line selection circuit 16 sequentially selects the signal line SGL in a time-division manner in one signal line block by the operation of the third switching element TrS. Further, the signal line selection circuit 16 selects one signal line SGL from each of the plurality of signal line blocks. With such a configuration, the detection device 1 can reduce the number of ICs (Integrated Circuits) including the detection circuit 48 or the number of terminals of the IC.

[0046] Note that the signal line selection circuit 16 may bundle a plurality of signal lines SGL and connect them to the detection circuit 48. Specifically, the control circuit 122 (see FIG. 1) simultaneously supplies the selection signal ASW to the selection signal line Lsel. The signal line selection circuit 16 selects a plurality of signal lines SGL (for example, six signal lines SGL) in one signal line block by the operation of the third switching element TrS, and connects the plurality of signal lines SGL and the detection circuit 48. Thereby, the signals detected in block units PAG1 and PAG2 are output to the detection circuit 48. In this case, the signals from the plurality of partial detection regions PAA (optical sensors PD) included in the block units PAG1 and PAG2 are integrated and output to the detection circuit 48.

[0047] By performing detection for each of the block units PAG1 and PAG2 by the operations of the gate line drive circuit 15 and the signal line selection circuit 16, the intensity of the detection signal Vdet obtained by one detection is improved, so that the sensor sensitivity can be improved.

[0048] In the present disclosure, the detection device 1 can change the number of partial detection regions PAA (optical sensors PD) included in the block units PAG1 and PAG2. Thereby, according to the information to be acquired, the resolution per inch (ppi (pixel per inch) value, hereinafter referred to as "definition") can be set.

[0049] For example, the number of partial detection regions PAA (photo sensors PD) included in block units PAG1 and PAG2 is relatively decreased. As a result, although the detection time becomes longer and the frame rate becomes low (e.g., 20 fps or less), highly detailed detection (e.g., 300 ppi or more) can be performed. Hereinafter, a mode for performing low frame rate and highly detailed detection is referred to as the "first mode". By selecting the first mode for performing low frame rate and highly detailed detection, for example, fingerprints on the surface of a finger can be acquired in high definition.

[0050] Also, for example, the number of partial detection regions PAA (photo sensors PD) included in block units PAG1 and PAG2 is relatively increased. As a result, although the definition becomes low (e.g., 50 ppi or less), detection can be performed at a high frame rate (e.g., 100 fps or more) in which detection can be repeatedly executed in a short time in one frame. Hereinafter, a mode for performing high frame rate and low definition detection is referred to as the "second mode". By selecting the second mode for performing high frame rate and low definition detection, for example, temporal changes in a pulse wave can be accurately detected. Further, in this second mode, by using a pulse wave acquired at a higher frame rate (e.g., 1000 fps or more), it becomes possible to calculate a pulse wave propagation speed, blood pressure, and the like.

[0051] Also, for example, when acquiring a blood vessel image (vein pattern), the number of partial detection regions PAA (photo sensors PD) included in block units PAG1 and PAG2 is set to an intermediate value between the first mode and the second mode. As a result, detection can be performed at a medium frame rate (e.g., greater than 20 fps and less than 100 fps) where the frame rate is higher than the first mode and lower than the second mode, and at a medium definition (e.g., greater than 50 ppi and less than 300 ppi) where the definition is lower than the first mode and higher than the second mode. Hereinafter, a mode for performing medium frame rate and medium definition detection is referred to as the "third mode". This third mode for performing medium frame rate and medium definition detection is suitable, for example, when acquiring a blood vessel pattern such as a vein.

[0052] As shown in FIG. 3, the reset circuit 17 includes a reference signal line Lvr, a reset signal line Lrst, and a fourth switching element TrR. The fourth switching element TrR is provided corresponding to a plurality of signal lines SGL. The reference signal line Lvr is connected to one of the sources or drains of the plurality of fourth switching elements TrR. The reset signal line Lrst is connected to the gates of the plurality of fourth switching elements TrR.

[0053] The control circuit 122 supplies a reset signal RST2 to the reset signal line Lrst. As a result, the plurality of fourth switching elements TrR are turned on, and the plurality of signal lines SGL are electrically connected to the reference signal line Lvr. The power supply circuit 123 supplies a reference signal COM to the reference signal line Lvr. As a result, the reference signal COM is supplied to the capacitive elements Ca (see FIG. 4) included in the plurality of partial detection regions PAA.

[0054] FIG. 4 is a circuit diagram showing a plurality of partial detection regions of the detection device according to the embodiment. In FIG. 4, the circuit configuration of the detection circuit 48 is also shown. As shown in FIG. 4, the partial detection region PAA includes a photosensor PD, a capacitive element Ca, and a first switching element Tr1. The capacitive element Ca is a capacitance (sensor capacitance) formed in the photosensor PD and is equivalently connected in parallel with the photosensor PD. Further, the signal line capacitance Cc is a parasitic capacitance formed in the signal line SGL and is equivalently formed between the signal line SGL, the anode of the photosensor PD, and one end side of the capacitive element Ca.

[0055] In FIG. 4, two gate lines GCL(m), GCL(m + 1) arranged in the second direction Dy among the plurality of gate lines GCL are shown. Also, two signal lines SGL(n), SGL(n + 1) arranged in the first direction Dx among the plurality of signal lines SGL are shown. The partial detection region PAA is a region surrounded by the gate line GCL and the signal line SGL.

[0056] The first switching element Tr is provided corresponding to the optical sensor PD. The first switching element Tr is constituted by a thin film transistor, and in this example, it is constituted by an n-channel MOS (Metal Oxide Semiconductor) type TFT (Thin Film Transistor).

[0057] The gates of the first switching elements Tr belonging to a plurality of partial detection regions PAA arranged in the first direction Dx are connected to the gate line GCL. The sources of the first switching elements Tr belonging to a plurality of partial detection regions PAA arranged in the second direction Dy are connected to the signal line SGL. The drain of the first switching element Tr is connected to the cathode of the optical sensor PD and the capacitive element Ca.

[0058] A sensor power signal VDDSNS is supplied from the power supply circuit 123 to the anode of the optical sensor PD. Also, a reference signal COM serving as the initial potential of the signal line SGL and the capacitive element Ca is supplied from the power supply circuit 123 to the signal line SGL and the capacitive element Ca.

[0059] When light irradiates the partial detection region PAA, a current corresponding to the amount of light flows through the optical sensor PD, and thereby charges are accumulated in the capacitive element Ca. When the first switching element Tr is turned on, a current flows through the signal line SGL according to the charges accumulated in the capacitive element Ca. The signal line SGL is connected to the detection circuit 48 via the third switching element TrS of the signal line selection circuit 16. Thereby, the detection device 1 can detect a signal corresponding to the amount of light irradiated to the optical sensor PD for each partial detection region PAA or for each block unit PAG1, PAG2.

[0060] During the detection period Pdet (see Fig. 6), the switch SSW is turned on and connected to the signal line SGL. The detection signal amplification unit 42 of the detection circuit 48 converts the fluctuation of the current supplied from the signal line SGL into a voltage fluctuation and amplifies it. A reference potential (Vref) having a fixed potential is input to the non-inverting input part (+) of the detection signal amplification unit 42, and the signal line SGL is connected to the inverting input terminal (-). In the embodiment, the same signal as the reference signal COM is input as the reference potential (Vref) voltage. Further, the detection signal amplification unit 42 has a capacitor element Cb and a reset switch RSW. During the reset period Prst (see Fig. 6), the reset switch RSW is turned on and the charge of the capacitor element Cb is reset.

[0061] Next, the configuration of the optical sensor PD will be described. Fig. 5A is a cross-sectional view showing the schematic cross-sectional configuration of the sensor unit. As shown in Fig. 5A, the sensor unit 10 includes a sensor base material 21, a TFT layer 22, an insulating layer 23, an optical sensor PD, and insulating layers 24a, 24b, 24c, 25. The sensor base material 21 is an insulating base material, and for example, glass or a resin material is used. The sensor base material 21 is not limited to a flat plate shape and may have a curved surface. In this case, the sensor base material 21 may be a film-like resin. The sensor base material 21 has a first surface and a second surface opposite to the first surface. On the first surface, the TFT layer 22, the insulating layer 23, the optical sensor PD, and the insulating layers 24, 25 are laminated in this order.

[0062] The TFT layer 22 is provided with circuits such as the gate line drive circuit 15 and the signal line selection circuit 16 described above. Further, the TFT layer 22 is provided with TFTs (Thin Film Transistors) such as the first switching element Tr and various wirings such as the gate line GCL and the signal line SGL. The sensor base material 21 and the TFT layer 22 are drive circuit boards for driving the sensors for each predetermined detection region, and are also called a backplane or an array board.

[0063] The insulating layer 23 is an organic insulating layer and is provided on the TFT layer 22. The insulating layer 23 is a planarization layer that planarizes the unevenness formed by the first switching element Tr formed in the TFT layer 22 and various conductive layers.

[0064] The photosensor PD is provided on the insulating layer 23. The photosensor PD has a lower electrode 35, a semiconductor layer 31, and an upper electrode 34, which are laminated in this order.

[0065] The lower electrode 35 is provided on the insulating layer 23 and is electrically connected to the first switching element Tr of the TFT layer 22 through the contact hole H1. The lower electrode 35 is the cathode of the photosensor PD and is an electrode for reading out the detection signal Vdet. The lower electrode 35 is made of a metal material such as molybdenum (Mo) or aluminum (Al), for example. Alternatively, the lower electrode 35 may be a laminated film in which a plurality of these metal materials are laminated. The lower electrode 35 may be a conductive material having translucency such as ITO (Indium Tin Oxide).

[0066] The semiconductor layer 31 is amorphous silicon (a-Si). The semiconductor layer 31 includes an i-type semiconductor layer 32a, a p-type semiconductor layer 32b, and an n-type semiconductor layer 32c. The i-type semiconductor layer 32a, the p-type semiconductor layer 32b, and the n-type semiconductor layer 32c are a specific example of a photoelectric conversion element. In FIG. 5A, in the direction perpendicular to the surface of the sensor substrate 21, the n-type semiconductor layer 32c, the i-type semiconductor layer 32a, and the p-type semiconductor layer 32b are laminated in this order. However, the opposite configuration, that is, the p-type semiconductor layer 32b, the i-type semiconductor layer 32a, and the n-type semiconductor layer 32c may be laminated in this order. Further, the semiconductor layer 31 may be a photoelectric conversion element made of an organic semiconductor.

[0067] The n-type semiconductor layer 32c is doped with impurities in a-Si to form an n+ region. The p-type semiconductor layer 32b is doped with impurities in a-Si to form a p+ region. The i-type semiconductor layer 32a is, for example, an undoped intrinsic semiconductor and has lower conductivity than the p-type semiconductor layer 32b and the n-type semiconductor layer 32c.

[0068] The upper electrode 34 is the anode of the photosensor PD and is an electrode for supplying the power signal VDDSNS to the photoelectric conversion layer. The upper electrode 34 is a translucent conductive layer such as ITO, etc., and is provided in common for all the photosensors PD.

[0069] An insulating layer 24a and an insulating layer 24b are provided on the insulating layer 23. The insulating layer 24a covers the peripheral portion of the upper electrode 34, and an opening is provided at a position overlapping the upper electrode 34. The connection wiring 36 is connected to the upper electrode 34 at a portion of the upper electrode 34 where the insulating layer 24a is not provided. The insulating layer 24b is provided on the insulating layer 24a so as to cover the upper electrode 34 and the connection wiring 36. An insulating layer 24c, which is a planarization layer, is provided on the insulating layer 24b. An insulating layer 25 is provided on the insulating layer 24c. However, the insulating layer 25 may be omitted.

[0070] FIG. 5B is a cross-sectional view showing a schematic cross-sectional configuration of a sensor portion of a detection device according to a first modification. As shown in FIG. 5B, in the detection device 1A of the first modification, the photosensor PDA is provided on the insulating layer 23a. The insulating layer 23a is an inorganic insulating layer provided so as to cover the insulating layer 23, and is formed of, for example, silicon nitride (SiN). The photosensor PDA includes a photoelectric conversion layer 31A, a lower electrode 35 (cathode electrode), and an upper electrode 34 (anode electrode). In a direction perpendicular to the first surface S1 of the sensor substrate 21, the lower electrode 35, the photoelectric conversion layer 31A, and the upper electrode 34 are laminated in this order.

[0071] The photoelectric conversion layer 31A changes its characteristics (e.g., voltage-current characteristics and resistance value) according to the incident light. An organic material is used as the material of the photoelectric conversion layer 31A. Specifically, as the photoelectric conversion layer 31A, for example, C60 (fullerene), PCBM (phenyl C61-butyric acid methyl ester), CuPc (copper phthalocyanine), F16CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), PDI (a derivative of perylene), etc., which are low molecular organic materials, can be used.

[0072] The photoelectric conversion layer 31A can be formed by a vapor deposition type (Dry Process) using these low molecular organic materials. In this case, the photoelectric conversion layer 31A may be, for example, a laminated film of CuPc and F16CuPc, or a laminated film of rubrene and C60. The photoelectric conversion layer 31A can also be formed by a coating type (Wet Process). In this case, a material combining the above-mentioned low molecular organic material and high molecular organic material is used. As the high molecular organic material, for example, P3HT (poly(3-hexylthiophene)), F8BT (F8-alt-benzothiadiazole), etc. can be used. The photoelectric conversion layer 31A can be a film in a state where P3HT and PCBM are mixed, or a film in a state where F8BT and PDI are mixed.

[0073] The lower electrode 35 and the upper electrode 34 face each other with the photoelectric conversion layer 31A interposed therebetween. For the upper electrode 34, a conductive material having translucency such as ITO (Indium Tin Oxide) is used. For the lower electrode 35, a metal material such as silver (Ag) or aluminum (Al) is used. Or, the lower electrode 35 may be an alloy material containing at least one or more of these metal materials.

[0074] By controlling the film thickness of the lower electrode 35, the lower electrode 35 can be formed as a semi-transmissive electrode having translucency. For example, the lower electrode 35 can be formed of an Ag thin film with a film thickness of 10 nm, and thus has a translucency of about 60%. In this case, the optical sensor PDA can detect light irradiated from both sides of the sensor substrate 21, for example, both the light L1 irradiated from the first surface S1 side and the light irradiated from the second surface S2 side.

[0075] Although not shown in FIG. 5B, an insulating layer 24 may be provided to cover the upper electrode 34. The insulating layer is a passivation film and is provided to protect the optical sensor PDA.

[0076] As shown in FIG. 5B, a first switching element Tr electrically connected to the optical sensor PDA is provided in the TFT layer 22. The first switching element Tr includes a semiconductor layer 81, a source electrode 82, a drain electrode 83, and gate electrodes 84 and 85. The lower electrode 35 of the optical sensor PDA is electrically connected to the drain electrode 83 of the first switching element Tr through contact holes H11 provided in the insulating layers 23 and 23a.

[0077] The first switching element Tr has a so-called dual gate structure in which gate electrodes 84 and 85 are provided on both the upper and lower sides of the semiconductor layer 81. However, the present invention is not limited thereto, and the first switching element Tr may have a top gate structure or a bottom gate structure.

[0078] Note that in FIG. 5B, the second switching element TrA and the terminal portion 72 provided in the peripheral region GA are schematically shown. The second switching element TrA is, for example, a switching element provided in the gate line driving circuit 15 (see FIG. 1). The second switching element TrA has a semiconductor layer 86, a source electrode 87, a drain electrode 88, and a gate electrode 89. The second switching element TrA has a so-called top gate structure in which the gate electrode 89 is provided above the semiconductor layer 86. A light-shielding layer 90 is provided between the semiconductor layer 86 and the sensor base material 21 below the semiconductor layer 86. However, the present invention is not limited to this, and the second switching element TrA may have a bottom gate structure or a dual gate structure.

[0079] The semiconductor layer 81 of the first switching element Tr and the semiconductor layer 86 of the second switching element TrA are provided in different layers. The semiconductor layer 81 of the first switching element Tr is, for example, an oxide semiconductor. The semiconductor layer 86 of the second switching element TrA is, for example, polysilicon.

[0080] Next, an operation example of the detection device 1 will be described. FIG. 6 is a timing waveform diagram showing an operation example of the detection device. FIG. 7 is a timing waveform diagram showing an operation example during the reset period in FIG. 6. FIG. 8 is a timing waveform diagram showing an operation example during the read period in FIG. 6. FIG. 9 is a timing waveform diagram showing an operation example of the driving period of one gate line included in the row read period VR in FIG. 6. FIG. 10 is an explanatory diagram for explaining the relationship between the driving of the sensor unit of the detection device and the lighting operation of the light source.

[0081] As shown in FIG. 6, the detection device 1 has a reset period Prst, an exposure period Pex, and a readout period Pdet. The power supply circuit 123 supplies the sensor power supply signal VDDSNS to the anode of the optical sensor PD over the reset period Prst, the exposure period Pex, and the readout period Pdet. The sensor power supply signal VDDSNS is a signal that applies a reverse bias between the anode and cathode of the optical sensor PD. For example, a reference signal COM of substantially 0.75V is applied to the cathode of the optical sensor PD, but by applying a sensor power supply signal VDDSNS of substantially -1.25V to the anode, a reverse bias of substantially 2.0V is applied between the anode and cathode. The control circuit 122 supplies the start signal STV and the clock signal CK to the gate line drive circuit 15 after setting the reset signal RST2 to "H", and the reset period Prst starts. During the reset period Prst, the control circuit 122 supplies the reference signal COM to the reset circuit 17 and turns on the fourth switching element TrR for supplying the reset voltage by the reset signal RST2. As a result, the reference signal COM is supplied as the reset voltage to each signal line SGL. The reference signal COM is set to, for example, 0.75V.

[0082] During the reset period Prst, the gate line drive circuit 15 sequentially selects the gate lines GCL based on the start signal STV, the clock signal CK, and the reset signal RST1. The gate line drive circuit 15 sequentially supplies the gate drive signals Vgcl{Vgcl(1)~Vgcl(M)} to the gate lines GCL. The gate drive signal Vgcl has a pulsed waveform having the power supply voltage VDD which is a high-level voltage and the power supply voltage VSS which is a low-level voltage. In FIG. 6, M (for example, M = 256) gate lines GCL are provided, and the gate drive signals Vgcl(1),..., Vgcl(M) are sequentially supplied to each gate line GCL, and a plurality of first switching elements Tr are sequentially turned on for each row, and the reset voltage is supplied. As the reset voltage, for example, a voltage of 0.75V of the reference signal COM is supplied.

[0083] Specifically, as shown in FIG. 7, the gate line driving circuit 15 supplies a gate driving signal Vgcl(1) of a high level voltage (power supply voltage VDD) to the gate line GCL(1) in the period V(1). The control circuit 122 supplies any one of the selection signals ASW1, …, ASW6 (selection signal ASW1 in FIG. 7) to the signal line selection circuit 16 during the period when the gate driving signal Vgcl(1) is at the high level voltage (power supply voltage VDD). Thereby, the signal line SGL of the partial detection region PAA selected by the gate driving signal Vgcl(1) is connected to the detection circuit 48. As a result, a reset voltage (reference signal COM) is also supplied to the connection wiring between the third switching element TrS and the detection circuit 48.

[0084] Similarly, the gate line driving circuit 15 supplies gate driving signals Vgcl(2), …, Vgcl(M-1), Vgcl(M) of high level voltages to the gate lines GCL(2), …, GCL(M-1), GCL(M) in the periods V(2), …, V(M-1), V(M), respectively.

[0085] Thereby, in the reset period Prst, the capacitance elements Ca of all the partial detection regions PAA are sequentially electrically connected to the signal lines SGL and the reference signal COM is supplied. As a result, the capacitance of the capacitance element Ca is reset. Incidentally, it is also possible to reset the capacitance of some of the capacitance elements Ca in the partial detection region PAA by partially selecting the gate lines and the signal lines SGL.

[0086] As examples of the exposure timing, there are an exposure control method when the gate line is not selected and a constant exposure control method. In the exposure control method when the gate line is not selected, gate drive signals {Vgcl(1)~(M)} are sequentially supplied to all the gate lines GCL connected to the photosensor PD to be detected, and a reset voltage is supplied to all the photosensors PD to be detected. Then, when all the gate lines GCL connected to the photosensor PD to be detected become low voltage (the first switching element Tr is off), exposure starts, and exposure is performed during the exposure period Pex. When the exposure ends, the gate drive signals {Vgcl(1)~(M)} are sequentially supplied to the gate lines GCL connected to the photosensor PD to be detected as described above, and reading is performed during the read period Pdet. In the constant exposure control method, it is also possible to perform control (constant exposure control) to perform exposure even during the reset period Prst and the read period Pdet. In this case, after the gate drive signal Vgcl(1) is supplied to the gate line GCL during the reset period Prst, the exposure period Pex(1) starts. Here, the exposure periods Pex{(1)···(M)} are defined as the periods during which the photosensor PD charges the capacitive element Ca. During the reset period Prst, the charge charged in the capacitive element Ca causes a reverse current (from the cathode to the anode) to flow in the photosensor PD due to light irradiation, and the potential difference of the capacitive element Ca decreases. Note that the actual exposure periods Pex(1), …, Pex(M) in the partial detection regions PAA corresponding to the respective gate lines GCL have different start timings and end timings. The exposure periods Pex(1), …, Pex(M) each start at the timing when the gate drive signal Vgcl changes from the high-level power supply voltage VDD to the low-level power supply voltage VSS during the reset period Prst. Also, the exposure periods Pex(1), …, Pex(M) each end at the timing when the gate drive signal Vgcl changes from the power supply voltage VSS to the power supply voltage VDD during the read period Pdet. The lengths of the exposure times of the respective exposure periods Pex(1), …, Pex(M) are equal.

[0087] During the exposure periods Pex{(1)···(M)}, in each partial detection region PAA, a current flows according to the light irradiated on the photosensor PD. As a result, charges are accumulated in each capacitive element Ca.

[0088] Before the timing when the read period Pdet starts, the control circuit 122 sets the reset signal RST2 to a low-level voltage. Thereby, the operation of the reset circuit 17 stops. Note that the reset signal may be at a high-level voltage only during the reset period Prst. During the read period Pdet, similar to the reset period Prst, the gate line driving circuit 15 sequentially supplies gate driving signals Vgcl(1),..., Vgcl(M) to the gate line GCL.

[0089] Specifically, as shown in FIG. 8, during the row read period VR(1), the gate line driving circuit 15 supplies a gate driving signal Vgcl(1) of a high-level voltage (power supply voltage VDD) to the gate line GCL(1). The control circuit 122 sequentially supplies selection signals ASW1,..., ASW6 to the signal line selection circuit 16 during the period when the gate driving signal Vgcl(1) is at a high-level voltage (power supply voltage VDD). Thereby, the signal lines SGL of the partial detection region PAA selected by the gate driving signal Vgcl(1) are sequentially or simultaneously connected to the detection circuit 48. As a result, the detection signal Vdet is supplied to the detection circuit 48 for each partial detection region PAA.

[0090] Similarly, during the row read periods VR(2),..., VR(M - 1), VR(M), the gate line driving circuit 15 supplies gate driving signals Vgcl(2),..., Vgcl(M - 1), Vgcl(M) of high-level voltages to the gate lines GCL(2),..., GCL(M - 1), GCL(M), respectively. That is, the gate line driving circuit 15 supplies a gate driving signal Vgcl to the gate line GCL for each of the row read periods VR(1), VR(2),..., VR(M - 1), VR(M). For each period when each gate driving signal Vgcl becomes a high-level voltage, the signal line selection circuit 16 sequentially selects the signal line SGL based on the selection signal ASW. The signal line selection circuit 16 sequentially connects each signal line SGL to one detection circuit 48. Thereby, during the read period Pdet, the detection device 1 can output the detection signals Vdet of all the partial detection regions PAA to the detection circuit 48.

[0091] Hereinafter, with reference to FIG. 9, an operation example during a row read period VR which is a supply period of one gate drive signal Vgcl(j) in FIG. 6 will be described. In FIG. 6, the first gate drive signal Vgcl(1) is given the sign of the row read period VR, but the same applies to the other gate drive signals Vgcl(2),..., Vgcl(M). j is any natural number from 1 to M.

[0092] As shown in FIGS. 9 and 4, the output (Vout) of the third switching element TrS is reset to the reference potential (Vref) voltage in advance. The reference potential (Vref) voltage is set as the reset voltage, for example, 0.75V. Next, the gate drive signal Vgcl(j) becomes high level and the first switching element Tr in the corresponding row turns on, and the signal line SGL of each row becomes a voltage corresponding to the charge accumulated in the capacitance (capacitance element Ca) of the partial detection region PAA. After the elapse of the period t1 from the rise of the gate drive signal Vgcl(j), a period t2 occurs during which the selection signal ASW(k) becomes high. When the selection signal ASW(k) becomes high and the third switching element TrS turns on, the output (Vout) of the third switching element TrS (see FIG. 4) changes to a voltage corresponding to the charge charged in the capacitance (capacitance element Ca) of the partial detection region PAA connected to the detection circuit 48 through the third switching element TrS (period t3). In the example of FIG. 9, this voltage decreases from the reset voltage as in the period t3. Thereafter, when the switch SSW turns on (during the high level period t4 of the SSW signal), the charge accumulated in the capacitance (capacitance element Ca) of the partial detection region PAA moves to the capacitance (capacitance element Cb) of the detection signal amplification unit 42 of the detection circuit 48, and the output voltage of the detection signal amplification unit 42 becomes a voltage corresponding to the charge accumulated in the capacitance element Cb. At this time, since the inverting input part of the detection signal amplification unit 42 becomes the imaginary short potential of the operational amplifier, it returns to the reference potential (Vref). The output voltage of the detection signal amplification unit 42 is read by the A / D conversion unit 43. In the example of FIG. 9, the waveforms of the selection signals ASW(k), ASW(k + 1),... corresponding to the signal lines SGL of each column become high and the third switching element TrS is sequentially turned on, and the charge accumulated in the capacitance (capacitance element Ca) of the partial detection region PAA connected to the gate line GCL is sequentially read out by performing the same operation sequentially. Note that ASW(k), ASW(k + 1),... in FIG. 9 are, for example, any one of ASW1 to ASW6 in FIG. 9.

[0093] Specifically, when a period t4 during which the switch SSW is turned on occurs, charges move from the capacitance (capacitive element Ca) of the partial detection region PAA to the capacitance (capacitive element Cb) of the detection signal amplification unit 42 of the detection circuit 48. At this time, the non-inverting input (+) of the detection signal amplification unit 42 is biased to the reference potential (Vref) voltage (for example, 0.75 [V]). For this reason, due to an imaginary short between the inputs of the detection signal amplification unit 42, the output (Vout) of the third switching element TrS also becomes the reference potential (Vref) voltage. Also, the voltage of the capacitive element Cb becomes a voltage corresponding to the charges accumulated in the capacitance (capacitive element Ca) of the partial detection region PAA at the location where the third switching element TrS is turned on according to the selection signal ASW(k). The output of the detection signal amplification unit 42 becomes a voltage corresponding to the capacitance of the capacitive element Cb after the output (Vout) of the third switching element TrS becomes the reference potential (Vref) voltage due to an imaginary short, and this output voltage is read by the A / D conversion unit 43. Note that the voltage of the capacitive element Cb is, for example, the voltage between two electrodes provided in the capacitor constituting the capacitive element Cb.

[0094] Note that the period t1 is, for example, 20 [μs]. The period t2 is, for example, 60 [μs]. The period t3 is, for example, 44.7 [μs]. The period t4 is, for example, 0.98 [μs].

[0095] As shown in FIG. 10, in each of the periods t(1), t(2), t(3), and t(4), the detection device 1 executes the above-described reset period Prst, exposure period Pex{(1)···(M)}, and read period Pdet. In the reset period Prst and the read period Pdet, the gate line drive circuit 15 sequentially scans from the gate line GCL(1) to the gate line GCL(M). In the following description, the detection in each period t, that is, the detection in which the gate lines GCL(1) to GCL(M) are scanned in the reset period Prst and the read period Pdet, and the detection signal Vdet is acquired from the signal lines SGL of each column, is represented as the detection of one frame.

[0096] The control circuit 122 can control the lighting and non - lighting of the light source according to the detection target. In FIG. 10, an example is shown in which the first light source 61 is lit during the period t(1) and the period t(3), and the second light source 62 is lit during the period t(2) and the period t(4). That is, in the example shown in FIG. 10, the control circuit 122 alternately switches the lighting and non - lighting of the first light source 61 and the second light source 62 for each detection of one frame. Not limited to this, for example, the control circuit 122 may switch the lighting and non - lighting of the first light source 61 and the second light source 62 at predetermined intervals, or may continuously light either one of them.

[0097] In addition, from FIG. 6 to FIG. 10, an example in which the gate line drive circuit 15 individually selects the gate line GCL has been shown, but it is not limited to this. The gate line drive circuit 15 may simultaneously select two or more predetermined numbers of gate lines GCL and sequentially supply the gate drive signal Vgcl for each predetermined number of gate lines GCL. Also, the signal line selection circuit 16 may also connect two or more predetermined numbers of signal lines SGL to one detection circuit 48 at the same time. Furthermore, the gate line drive circuit 15 may perform scanning by thinning out a plurality of gate lines GCL.

[0098] As shown in FIG. 8, during the row read period VR(1), the selection signals ASW1, …, ASW6 are sequentially supplied to the signal line selection circuit 16 during the period when the gate drive signal Vgcl(1) is at a high - level voltage (power supply voltage VDD). That is, even after the selection signal ASW1 becomes a low - level voltage at time t11, it is continuously exposed during the exposure period Pex - 1 until the gate drive signal Vgcl(1) becomes a low - level voltage at time t13. The charge corresponding to the exposure period Pex - 1 is charged from the photosensor PD to the signal line SGL(1) corresponding to the selection signal ASW1.

[0099] Similarly, charges are charged to each signal line SGL during each of the exposure periods Pex - 1, …, Pex - 6 corresponding to the respective selection signals ASW1, …, ASW6. For example, the exposure period Pex - 6 is the period from when the selection signal ASW6 becomes a low - level voltage at time t12 until the gate drive signal Vgcl(1) becomes a low - level voltage at time t13, and the exposure period Pex is different for each column.

[0100] Then, in the next line readout period VR(2), a signal obtained by summing the charges charged during the exposure periods Pex-1(SGL(1)) ··· Pex-6(SGL(6)) of the previous line readout period VR(1) is supplied to the detection circuit 48 as the detection signal Vdet of the second line.

[0101] As described above, the detection device 1 is configured to include, for example, a plurality of types of light sources (first light source 61, second light source 62) having different wavelengths of emitted light, so that fingerprints obtained by detecting light reflected from the surface of the subject's finger, and various biological information obtained by detecting light reflected or transmitted inside the subject's finger, wrist, etc. can be acquired.

[0102] Hereinafter, as a specific example of information related to a living body acquired by the detection device 1, an example of acquiring a pulse wave, which is biological information for calculating the oxygen saturation in blood (hereinafter referred to as blood oxygen saturation (SpO2)), will be described. FIG. 11 is a plan view schematically showing the relationship between the sensor unit of the detection device according to the embodiment, the first light source, and the second light source.

[0103] As shown in FIG. 11, the detection device 1 has a filter 63. The filter 63 is arranged to overlap the detection region AA from one end to the other end of the sensor unit 10 in the scanning direction SCAN. The filter 63 has a transmission band that transmits the first light emitted from the first light source 61 and the second light emitted from the second light source 62. In the configuration according to the first embodiment, the filter 63 is not necessarily required, and a configuration without the filter 63 may be used.

[0104] In the configuration shown in FIG. 11, the scanning direction SCAN is the direction in which the gate line driving circuit 15 scans the gate line GCL. That is, one gate line GCL is provided to extend in the first direction Dx in the detection region AA and is connected to a plurality of partial detection regions PAA provided in the detection region AA. Also, one signal line SGL is provided to extend in the second direction Dy in the detection region AA and is connected to a plurality of optical sensors PD in the detection region AA.

[0105] The first light source substrate 51 and the second light source substrate 52 face each other in the first direction Dx with the detection region AA interposed therebetween in a plan view. A plurality of first light sources 61 and a plurality of second light sources 62 are provided on the surface of the first light source substrate 51 that faces the second light source substrate 52. Further, a plurality of first light sources 61 and a plurality of second light sources 62 are provided on the surface of the second light source substrate 52 that faces the first light source substrate 51. The plurality of first light sources 61 and the plurality of second light sources 62 are arranged in the first direction Dx along the outer periphery of the detection region AA, and are alternately provided in the second direction Dy on each of the first light source substrate 51 and the second light source substrate 52.

[0106] The first light source 61 emits first light in a direction parallel to the first direction Dx. Thereby, the detection region AA is irradiated with the first light. Further, the second light source 62 emits second light in a direction parallel to the first direction Dx. Thereby, the detection region AA is irradiated with the second light.

[0107] FIG. 12 is a side view of the detection device shown in FIG. 11 as viewed from the first direction Dx. As shown in FIG. 12, a detected object such as a finger Fg or a wrist of a subject contacts or approaches above the sensor unit 10 through the filter 63. The first light source 61 and the second light source 62 are disposed above the sensor unit 10 and the filter 63, and are disposed sandwiching the detected object such as a finger Fg or a wrist of the subject in the first direction Dx.

[0108] Here, for example, as the first light emitted from the first light source 61, visible light (red light) in the range of 600 nm or more and 700 nm or less, specifically, about 660 nm, is adopted, and as the second light emitted from the second light source 62, infrared light in the range of 780 nm or more and 950 nm or less, specifically, about 850 nm, is adopted. When obtaining the blood oxygen saturation (SpO2) of a human, the pulse wave obtained by the first light (red light) and the pulse wave obtained by the second light (infrared light) are used.

[0109] Since the amount of light absorption by hemoglobin changes depending on the amount of oxygen it takes in, a photosensor PD detects the amount of light obtained by subtracting the light absorbed by blood (hemoglobin) from the irradiated first light and second light. Most of the oxygen in the blood is reversibly bound to hemoglobin in red blood cells, and only a very small part is dissolved in the plasma. More specifically, the value indicating what percentage of the allowable amount of oxygen is bound in the whole blood is called the oxygen saturation (SpO2). It becomes possible to calculate the blood oxygen saturation from the amount obtained by subtracting the light absorbed by blood (hemoglobin) from the irradiated light at two wavelengths of the first light and the second light.

[0110] The oxygen saturation (SpO2) is determined by the ratio between the case where hemoglobin in the blood is bound to oxygen (O2Hb: oxygenated hemoglobin) and the case where it is not bound (HHb: reduced hemoglobin). The light absorption characteristics of red light are such that HHb >> O2Hb, with the absorbance of HHb being significantly larger, while the light absorption characteristics of infrared light are such that HHb ≒ O2Hb, with the absorbance of O2Hb being slightly larger.

[0111] The first light emitted from the first light source 61 travels in a direction parallel to the first direction Dx and enters the finger Fg or wrist of the subject. The first light emitted from the first light source 61 penetrates into the living body and is reflected inside the finger Fg or wrist of the subject. The reflected light reflected inside the finger Fg or wrist of the subject travels in the third direction Dz and enters the detection region AA of the sensor unit 10 through the filter 63.

[0112] The second light emitted from the second light source 62 travels in a direction parallel to the first direction Dx and enters the finger Fg or wrist of the subject. The second light emitted from the second light source 62 penetrates into the living body and is reflected inside the finger Fg or wrist of the subject. The reflected light reflected inside the finger Fg or wrist of the subject travels in the third direction Dz and enters the detection region AA of the sensor unit 10 through the filter 63.

[0113] Note that the arrangements of the plurality of first light sources 61 and the plurality of second light sources 62 are not limited to the examples shown in FIGS. 11 and 12. For example, above a detection object such as a finger Fg or a wrist of a subject shown in FIG. 12, specifically, a mode in which the first light or the second light is irradiated from the third direction Dz may be used. Alternatively, the plurality of first light sources 61 and the plurality of second light sources 62 may be, for example, so-called directly below type light sources provided directly below the detection region AA.

[0114] In the example shown in FIG. 10, in the detection of each one frame of the period t(1), the period t(2), the period t(3), and the period t(4), a reset period Prst, an exposure period Pex, and a readout period Pdet are provided. In the reset period Prst and the readout period Pdet, the gate line drive circuit 15 sequentially scans from the gate line GCL(1) to the gate line GCL(M).

[0115] As shown in FIG. 10, in the detection of one frame in the period t(1), the control circuit 122 (detection control unit 11) turns on the first light source 61 and turns off the second light source 62 during the exposure period Pex. Also, in the detection of one frame in the period t(2), the control circuit 122 (detection control unit 11) turns off the first light source 61 and turns on the second light source 62 during the exposure period Pex. Similarly, in the detection of one frame in the period t(3), the first light source 61 is turned on and the second light source 62 is turned off during the exposure period Pex, and in the detection of one frame in the period t(4), the first light source 61 is turned off and the second light source 62 is turned on during the exposure period Pex.

[0116] In this way, the lighting and non-lighting of the first light source 61 and the second light source 62 are controlled in a time-division manner for each frame detection. As a result, the first detection signal detected by the photosensor PD with the first light and the second detection signal detected by the photosensor PD with the second light are output to the detection circuit 48 in a time-division manner.

[0117] In calculating the blood oxygen saturation (SpO2), since the pulse wave acquired by the first light and the pulse wave acquired by the second light are used, it is desirable that the detection timing shift between the first detection signal detected by the first light and the second detection signal detected by the second light is small. Hereinafter, an operation example capable of reducing the detection timing shift between the first detection signal detected by the first light and the second detection signal detected by the second light will be described with reference to FIGS. 13 and 14.

[0118] FIG. 13 is an explanatory diagram for explaining an operation example of the detection device according to the embodiment. FIG. 14 is a timing waveform diagram showing the operation example of the detection device according to the embodiment. In the example shown in FIG. 13, the reset periods Prst of each period t(1), t(2), t(3), t(4) are indicated by solid arrows, and the read periods Pdet are indicated by broken arrows.

[0119] In the operation example shown in FIG. 13, the reset period Prst of the period t(1) in which the period T1 for lighting the first light source 61 is provided and the read period Pdet of the previous frame are executed in parallel. Also, the reset period Prst of the period t(2) in which the period T2 for lighting the second light source 62 is provided and the read period Pdet of the previous frame are executed in parallel. Similarly hereinafter, the reset period Prst of the period t(3) in which the period T3 for lighting the first light source 61 is provided and the read period Pdet of the previous frame are executed in parallel, and the reset period Prst of the period t(4) in which the period T4 for lighting the second light source 62 is provided and the read period Pdet of the previous frame are executed in parallel. Specifically, for example, immediately after reading each row of the frame in the period t(1), the corresponding row of the frame in the period t(2) is reset and irradiated with light in the period T2. Then, immediately after reading each row of the frame in the period t(2), the corresponding row of the frame in the period t(3) is reset and irradiated with light in the period T3. Thereafter, the same operation is repeated. Thereby, the timing shift between the detection by the first light emitted from the first light source 61 and the detection by the first light emitted from the second light source 62 can be reduced for each row.

[0120] In the operation example shown in FIG. 13, a gate drive signal Vgcl is supplied to the gate line GCL for each row, and a plurality of first switching elements Tr belonging to a predetermined row are brought into a connected state. Specifically, as shown in FIG. 14, at time t21, the gate line drive circuit 15 supplies a gate drive signal Vgcl(1) having a high-level voltage (power supply voltage VDD) to the gate line GCL(1). The row read period VR(1) starts at time t21 at the timing when the gate drive signal Vgcl(1) becomes a high-level voltage.

[0121] Specifically, the control circuit 122 sequentially supplies the selection signals ASW1, …, ASW6 to the signal line selection circuit 16 during the period when the gate drive signal Vgcl(1) is at a high-level voltage (power supply voltage VDD). In response to the selection signals ASW1, …, ASW6, the third switching elements TrS are sequentially brought into a connected state. That is, during the read period for each row (row read period VR(1)), a plurality of first switching elements Tr in a predetermined row are in a connected state, and the signal line selection circuit 16 connects a plurality of signal lines SGL to the detection circuit 48 in a predetermined order for each column. As a result, the detection signal Vdet is supplied to the detection circuit 48 for each partial detection area PAA.

[0122] In FIG. 14, the selection signals ASW1, …, ASW6 are supplied in time division in the order of periods T11, ···, T16. At time t22, the control circuit 122 sets the selection signal ASW6 to a low-level voltage, and the reading of the last column is completed. That is, the row read period VR(1) ends at the timing when the gate drive signal Vgcl(1) is at a high-level voltage and the selection signal ASW6 is displaced to a low-level voltage.

[0123] After completion of the read period (row read period VR(1)) of a predetermined row and before the start of the read period (row read period VR(2)) of the next row of the predetermined row, a reset potential (reference signal COM) is supplied to a plurality of optical sensors PD and a plurality of signal lines SGL belonging to the predetermined row. Specifically, the control circuit 122 supplies a reset signal RST2 to the reset signal line Lrst at time t22. Thereby, a plurality of fourth switching elements TrR are turned on, and the reference signal COM is supplied to the optical sensor PD corresponding to the gate line GCL(1) and the plurality of signal lines SGL.

[0124] In the example shown in FIG. 14, the timing at which the reset signal RST2 becomes a high-level voltage and the timing at which the selection signal ASW6 becomes a low-level voltage coincide at time t22. However, the present invention is not limited to this, and after the selection signal ASW6 becomes a low-level voltage, the reset signal RST2 may be set to a high-level voltage after a predetermined period has elapsed.

[0125] Thereafter, at time t23, the gate line driving circuit 15 sets the gate driving signal Vgcl(1) to a low-level voltage. Thereby, a plurality of first switching elements Tr of a predetermined row become non-connected states. At time t24, the control circuit 122 sets the reset signal RST2 to a low-level voltage. Thereby, the read period Pdet and the reset period Prst of the first row are completed.

[0126] Thereafter, at time t25, the gate line driving circuit 15 supplies a gate driving signal Vgcl(2) having a high-level voltage (power supply voltage VDD) to the gate line GCL(2) of the second row. Hereinafter, in the same manner as the first row, the read period Pdet and the reset period Prst of the second row are executed from time t26 to time t28. By repeatedly scanning up to the last row (gate line GCL(256)), detection of one frame can be performed.

[0127] The periods T1, T2, T3, T4 (see FIG. 13) for turning on each light source are such that all gate lines GCL are in a non-selected state (the gate drive signal Vgcl is at a low-level voltage). That is, the light source is turned off during the row read period VR in which the first switching element Tr of a predetermined row is in a connected state, and the light source is turned on during the periods T1, T2, T3, T4 in which all the first switching elements Tr are in a non-connected state.

[0128] In the examples shown in FIGS. 13 and 14, as described above, the read period Pdet and the reset period Prst in the detection of the front and rear two frames are executed in parallel. Thereby, it is possible to reduce the deviation in the detection timing between the first detection signal detected by the first light and the second detection signal detected by the second light.

[0129] FIG. 15 is a schematic diagram showing the positional relationship between the detection region of the sensor unit and the object to be detected. In FIG. 15, the finger Fg of a subject is exemplified as the object to be detected.

[0130] FIG. 16A is a diagram showing the waveform of the pulse wave obtained based on the detection signal detected in the partial detection region A shown in FIG. 15. FIG. 16B is a diagram showing the waveform of the pulse wave obtained based on the detection signal detected in the partial detection region B shown in FIG. 15. FIG. 16C is a diagram showing the waveform of the pulse wave obtained based on the detection signal detected in the partial detection region C shown in FIG. 15. In FIGS. 16A, 16B, and 16C, the horizontal axis represents time, and the vertical axis represents the data value of the pulse wave data.

[0131] FIG. 17 is a diagram showing an example of the detection signal waveform. In FIG. 17, the horizontal axis represents time, and the vertical axis represents the data value after A / D conversion of the detection signal Vdet.

[0132] In the following description, in FIGS. 16A, 16B, 16C, and 17, the magnitude of the P-P (Peak to Peak) value of the data value is referred to as the "signal intensity".

[0133] The intensity of the signal detected in each partial detection region PAA within the detection region AA varies depending on the distribution of blood vessels under the skin of the subject's finger Fg. Specifically, for example, the signal intensity of the pulse wave (FIG. 16B) obtained based on the detection signal Vdet detected in the partial detection region B shown in FIG. 15 is greater relative to the signal intensity of the pulse wave (FIG. 16A) obtained based on the detection signal Vdet detected in the partial detection region A shown in FIG. 15, and the signal intensity of the pulse wave (FIG. 16C) obtained based on the detection signal Vdet detected in the partial detection region C shown in FIG. 15.

[0134] In addition, as shown in FIG. 17, the detection signal Vdet detected in each partial detection region PAA within the detection region AA includes noise components caused by disturbances and the subject's body movement.

[0135] In the present disclosure, as preprocessing for acquiring pulse wave data, a partial detection region PAA in which the signal intensity of the data acquired in each partial detection region PAA satisfies a predetermined condition is extracted. More specifically, among the partial detection regions PAA within the detection region AA, a partial detection region PAA in which the signal intensity of the data acquired in each partial detection region PAA is relatively large is extracted. Then, based on the detection signal Vdet detected in the biological data acquisition region BAA (see FIGS. 23A, 23B, and 23C) including the extracted partial detection region PAA, data related to the living body (here, pulse wave data) is acquired. Thereby, it becomes possible to acquire highly accurate data related to the living body.

[0136] (Embodiment 1) FIG. 18 is a flowchart showing an example of a detection processing flow in the detection device according to Embodiment 1. Each process shown in FIG. 18 is mainly executed by the signal processing unit 44 of the detection unit 40.

[0137] In the following description, X<m,n> indicates a variable in the partial detection region PAA at the m-th column and n-th row. The variable X<m,n> includes the coordinate information of the partial detection region PAA where the variable X<m,n> is acquired. Also, X(f)<m,n> indicates the variable X<m,n> in the f-th frame.

[0138] In the detection processing flow shown in FIG. 18, first, the signal processing unit 44 acquires detection values Raw(f)<m,n> for a plurality of frames in each partial detection region PAA within the detection region AA. The number of frames F for acquiring the detection values Raw(f)<m,n> for a plurality of frames is set to a number that allows the peak of the pulse wave to be acquired a plurality of times (for example, about 10 times). The number of frames F is stored, for example, in the storage unit 46.

[0139] Also, in the processing from step S102 to step S110 of the detection processing flow shown in FIG. 18, the control circuit 122 continuously turns on either the first light source 61 or the second light source 62, for example, during the periods t(1), t(2), t(3), and t(4) shown in FIG. 10. Each detection value Raw(f)<m,n> is temporarily stored in the storage unit 46, for example. FIG. 19 is a diagram showing the detection values for F frames in each partial detection region within the detection region temporarily stored in the storage unit.

[0140] The signal processing unit 44 sets the initial frame f to 1 (f = 1) (step S101). The signal processing unit 44 sets m = 1 and n = 1 (step S102), acquires the detection value Raw(f)<m,n> (step S103), and temporarily stores the acquired detection value Raw(f)<m,n> in the storage unit 46 (step S104).

[0141] Subsequently, the signal processing unit 44 sets m = m + 1 (step S105) and determines whether m is equal to M (m = M) (step S106). If m is less than M (m < M) (step S106; No), the process returns to the process of step S103.

[0142] When m becomes M (m = M) (step S106; Yes), subsequently, the signal processing unit 44 sets n = n + 1 (step S107) and determines whether n is equal to N (n = N) (step S108). If n is less than N (n < N) (step S108; No), the process returns to the process of step S103.

[0143] When n becomes N (n = N) (step S108; Yes), subsequently, the signal processing unit 44 sets f = f + 1 (step S109), and determines whether f is equal to F (f = F) (step S110). If f is less than F (f < F) (step S110; No), the process returns to the process of step S102.

[0144] By repeating the processes from step S102 to step S110 F times, the detection values Raw(f)<m, n> for F frames in each partial detection region PAA within the detection region AA shown in FIG. 19 are temporarily stored in the storage unit 46.

[0145] When f becomes F (f = F) (step S110; Yes), subsequently, the signal processing unit 44 sets m = 1 and n = 1 (step S111), sets the initial frame f to 1 (f = 1) (step S112), and reads the detection value Raw(f)<m, n> from the storage unit 46 (step S113). Further, the signal processing unit 44 sets f = f + 1 (step S114), and determines whether f is equal to F (f = F) (step S115). If f is less than F (f < F) (step S115; No), the process returns to the process of step S113.

[0146] By the processes from step S113 to step S115, the detection values Raw(f)<m, n> for F frames in the partial detection region PAA at the m-th column and n-th row are read out.

[0147] When f becomes F (f = F) (step S115; Yes), the signal processing unit 44 generates the time-domain data Det<m, n> in the partial detection region PAA at the m-th column and n-th row based on the detection values Raw(f)<m, n> for F frames read from the storage unit 46 (step S116). FIGS. 20A and 20B are diagrams showing specific examples of the time-domain data in each partial detection region. In FIG. 20A, the time-domain data in the partial detection region A shown in FIG. 15 is illustrated. In FIG. 20B, the time-domain data in the partial detection region B shown in FIG. 15 is illustrated.

[0148] The signal processing unit 44 performs a Fourier transform process (here, an FFT (Fast Fourier Transform) process) on the time-domain data Det<m,n> in the generated m-th row and n-th column partial detection region PAA, and generates frequency-domain data Sdet<m,n> (step S117). FIGS. 21A and 21B are diagrams showing specific examples of the frequency-domain data in each partial detection region. In FIG. 21A, the frequency-domain data in the partial detection region A shown in FIG. 15 is illustrated. In FIG. 21B, the frequency-domain data in the partial detection region B shown in FIG. 15 is illustrated.

[0149] The signal processing unit 44 extracts the peak value Speak<m,n> in the frequency range of the first frequency f1 or higher and the second frequency f2 or lower of the frequency-domain data shown in FIGS. 21A and 21B (step S118). The first frequency f1 is, for example, 0.5 [Hz] (f1 = 0.5 [Hz]), and the second frequency f2 is, for example, 3 [Hz] (f2 = 3 [Hz]). The signal processing unit 44 temporarily stores the extracted peak value Speak<m,n> in the storage unit 46 as the signal intensity in the m-th row and n-th column partial detection region PAA (step S119).

[0150] Then, the signal processing unit 44 sets m = m + 1 (step S120), and determines whether m is equal to M (m = M) (step S121). If m is less than M (m < M) (step S121; No), the process returns to the process of step S112.

[0151] When m becomes M (m = M) (step S121; Yes), subsequently, the signal processing unit 44 sets n = n + 1 (step S122), and determines whether n is equal to N (n = N) (step S123). If n is less than N (n < N) (step S123; No), the process returns to the process of step S112.

[0152] By repeating the processes from step S112 to step S123 M × N times, the signal intensity Speak<m,n> for each partial detection region PAA in the detection region AA is temporarily stored in the storage unit 46.

[0153] Based on the signal intensity Speak<m,n> for each partial detection region PAA within the detection region AA extracted by the above processing, the signal processing unit 44 sets a biological data acquisition region when acquiring pulse wave data (step S124).

[0154] FIG. 22 is a flowchart showing an example of a biological data acquisition region setting process flow in the detection device according to Embodiment 1.

[0155] In the biological data acquisition region setting process flow shown in FIG. 22, first, the signal processing unit 44 executes a comparison operation process on the signal intensity Speak<m,n> in each partial detection region PAA within the detection region AA, and extracts the coordinates of the position of the partial detection region PAA where the signal intensity Speak<m,n> becomes maximum.

[0156] The signal processing unit 44 initializes the maximum signal intensity Speak_max<m,n> to 0 (Speak_max<m,n>=0) (step S201). The signal processing unit 44 sets m = 1 and n = 1 (step S202), and reads the signal intensity Speak<m,n> (step S203).

[0157] The signal processing unit 44 determines whether the read signal intensity Speak<m,n> is greater than the maximum signal intensity Speak_max<m,n> (Speak<m,n>>Speak_max<m,n>) (step S204). If the signal intensity Speak<m,n> is less than or equal to the maximum signal intensity Speak_max<m,n> (Speak<m,n>≦Speak_max<m,n>) (step S204; No), the process proceeds to the process of step S206.

[0158] When the read signal intensity Speak<m,n> is greater than the maximum signal intensity Speak_max<m,n> (Speak<m,n>>Speak_max<m,n>) (Step S204; Yes), the signal processing unit 44 replaces the maximum signal intensity Speak_max<m,n> with the signal intensity Speak<m,n> (Speak_max<m,n>=Speak<m,n>) and temporarily stores it in the storage unit 46 (Step S205).

[0159] Subsequently, the signal processing unit 44 sets m=m+1 (Step S206) and determines whether m is equal to M (m = M) (Step S207). If m is less than M (m<M) (Step S207; No), the process returns to the process of Step S203.

[0160] When m becomes M (m = M) (Step S207; Yes), subsequently, the signal processing unit 44 sets n=n+1 (Step S208) and determines whether n is equal to N (n = N) (Step S209). If n is less than N (n<N) (Step S209; No), the process returns to the process of Step S203.

[0161] By repeating the processes from Step S203 to Step S209 M×N times, the maximum signal intensity Speak_max<m,n> in the detection area AA and the coordinate information of the partial detection area PAA where the maximum signal intensity Speak_max<m,n> is obtained are temporarily stored in the storage unit 46.

[0162] When n becomes N (n = N) (Step S209; Yes), the signal processing unit 44 reads out the maximum signal intensity Speak_max<m,n> temporarily stored in the storage unit 46 (Step S210) and stores the coordinates of the partial detection area PAA where the maximum signal intensity Speak_max<m,n> is obtained in the storage unit 46 as the signal intensity maximum coordinates Smax(m,n) (Step S211).

[0163] The signal processing unit 44 sets a predetermined area centered on the signal intensity maximum coordinate Smax(m,n) as the biological data acquisition area BAA (step S212). FIGS. 23A, 23B, and 23C are diagrams showing specific examples of the biological data acquisition area.

[0164] In the example shown in FIG. 23A, the biological data acquisition area BAA includes a 3-column and 3-row partial detection area PAA centered on the partial detection area PAA located at the signal intensity maximum coordinate Smax(m,n) within the detection area AA. In the example shown in FIG. 23B, the biological data acquisition area BAA includes a 5-column and 5-row partial detection area PAA centered on the partial detection area PAA located at the signal intensity maximum coordinate Smax(m,n) within the detection area AA. In the example shown in FIG. 23C, the biological data acquisition area BAA includes a 7-column and 7-row partial detection area PAA centered on the partial detection area PAA located at the signal intensity maximum coordinate Smax(m,n) within the detection area AA.

[0165] The biological data acquisition area BAA is not limited to the modes shown in FIGS. 23A, 23B, and 23C. The biological data acquisition area BAA may be in a mode that includes at least the partial detection area PAA located at the signal intensity maximum coordinate Smax(m,n). For example, it may be an area that includes only the partial detection area PAA located at the signal intensity maximum coordinate Smax(m,n).

[0166] The biological data acquisition area BAA set in step S212 is stored in the storage unit 46.

[0167] Note that the biological data acquisition area setting process flow is not limited to the mode shown in FIG. 22. FIG. 24 is a flowchart showing an example of the biological data acquisition area setting process flow in the detection device according to the modification of Embodiment 1.

[0168] In the biological data acquisition area setting process flow shown in FIG. 24, a predetermined signal intensity threshold value Sth for signal intensity is set in advance and stored in the storage unit 46. The signal processing unit 44 sets m = 1 and n = 1 (step S301), reads out the signal intensity Speak<m,n> (step S302), and determines whether the signal intensity Speak<m,n> is greater than the signal intensity threshold value Sth (Speak<m,n>>Sth) (step S303).

[0169] If the signal intensity Speak<m,n> is less than or equal to the signal intensity threshold value Sth (Speak<m,n>≦Sth) (step S303; No), the process proceeds to the process of step S305.

[0170] If the signal intensity Speak<m,n> is greater than the signal intensity threshold value Sth (Speak<m,n>>Sth) (step S303; Yes), the signal processing unit 44 stores the coordinates of the partial detection area PAA where the signal intensity Speak<m,n> is obtained in the storage unit 46 as the signal intensity maximum coordinates Smax(m,n) (step S304).

[0171] Subsequently, the signal processing unit 44 sets m = m + 1 (step S305) and determines whether m is equal to M (m = M) (step S306). If m is less than M (m < M) (step S306; No), the process returns to the process of step S302.

[0172] When m becomes M (m = M) (step S306; Yes), subsequently, the signal processing unit 44 sets n = n + 1 (step S307) and determines whether n is equal to N (n = N) (step S308). If n is less than N (n < N) (step S308; No), the process returns to the process of step S302.

[0173] By repeating the processes from step S302 to step S308 M × N times, the signal intensity maximum coordinates Smax(m,n) in the detection area AA are stored in the storage unit 46.

[0174] The signal processing unit 44 reads out the signal intensity maximum coordinates Smax(m,n) stored in the storage unit 46 (step S309), and sets a biological data acquisition area BAA including the partial detection area PAA of the signal intensity maximum coordinates Smax(m,n) in the same manner as the biological data acquisition area setting process flow shown in FIG. 22 (step S310).

[0175] The biological data acquisition area BAA set in step S310 is stored in the storage unit 46. When a plurality of signal intensity maximum coordinates Smax(m,n) are extracted in the processes from step S302 to step S308, a plurality of biological data acquisition areas BAA are set within the detection area AA.

[0176] Note that the signal intensity maximum coordinates Smax(m,n) may be in any mode as long as one or more are extracted within the detection area AA. For example, among the signal intensities Speak<m,n> detected in each partial detection area PAA within the detection area AA, a plurality of signal intensity maximum coordinates Smax(m,n) included in a predetermined upper ratio may be extracted.

[0177] Returning to FIG. 18, in the biological data acquisition process (step S125), the signal processing unit 44 reads out the biological data acquisition area BAA stored in the storage unit 46, and acquires pulse wave data based on the detection signal Vdet detected in the partial detection area PAA included in the biological data acquisition area BAA.

[0178] Note that as shown in FIGS. 23A, 23B, and 23C, when the biological data acquisition area BAA has a plurality of partial detection areas PAA, or when a plurality of biological data acquisition areas BAA are set within the detection area AA, the signal processing unit 44 averages the detection signals Vdet output from the plurality of partial detection areas PAA within the biological data acquisition area BAA to acquire pulse wave data. Thereby, an improvement in the quality of the pulse wave data can be expected.

[0179] As described above, the intensity of the signal detected in each partial detection region PAA within the detection region AA varies depending on the distribution of blood vessels under the skin of the subject's finger Fg. The detection device 1 according to the present embodiment extracts a partial detection region PAA in which the signal intensity of the data acquired in each partial detection region PAA within the detection region AA is relatively large, and acquires pulse wave data based on the detection signal Vdet detected in the biological data acquisition region BAA (see FIGS. 23A, 23B, and 23C) including the extracted partial detection region PAA. Thereby, it becomes possible to acquire highly accurate pulse wave data.

[0180] (Embodiment 2) FIG. 25 is a flowchart showing an example of a detection process flow in the detection device according to Embodiment 2. Each process shown in FIG. 25 is mainly executed by the signal processing unit 44.

[0181] In the detection process flow shown in FIG. 25, the signal processing unit 44 acquires the detection value Raw<m,n> in each partial detection region PAA within the detection region AA, executes LPF processing and HPF processing, and then executes a predetermined peak detection process. Here, as an example of the data conversion process used in the peak detection process, the SSF (Slope Sum Function) process will be exemplified and described. FIG. 26A is a diagram showing an example of the data after executing LPF processing and HPF processing. FIG. 26B is a diagram showing an example of the data after SSF processing.

[0182] In the SSF process, the following arithmetic expression is applied to the detection value Raw. In the following arithmetic expression, x p represents the data value after executing LPF processing and HPF processing on the detection value Raw, and y p represents the data value D after SSF processing. P represents the number of samples used in the SSF process. The following arithmetic expression is stored, for example, in the storage unit 46. The number of samples P is stored, for example, in the storage unit 46.

[0183]

Equation

[0184] FIG. 27 is a conceptual diagram showing an example of a peak detection method. For the data value D after the SSF process, a first threshold value Dth1 and a second threshold value Dth2 (Dth1 > Dth2) are set in the signal processing unit 44. The first threshold value Dth1 and the second threshold value Dth2 are stored in the storage unit 46, for example.

[0185] The signal processing unit 44 detects the peak value Dp of the data value D after the SSF process in the period from when the data value D after the SSF process exceeds the first threshold value Dth1 until it falls below the second threshold value Dth2, and sequentially stores it temporarily in the storage unit 46.

[0186] The signal processing unit 44 integrates the peak value Dp for each partial detection region PAA within the detection region AA and stores it temporarily in the storage unit 46. Also, the signal processing unit 44 temporarily stores the integration count of the peak value Dp in the storage unit 46. FIG. 28A is a diagram showing the peak integration value temporarily stored in the storage unit. FIG. 28B is a diagram showing the peak integration count temporarily stored in the storage unit.

[0187] The signal processing unit 44 divides the peak integration value Dp_add<m,n> (see FIG. 28A), which is the integrated value of the peak values Dp<m,n> detected during a predetermined peak detection period T, by the peak integration count Dp_cnt<m,n> (FIG. 28B), which is the integration count of the peak values Dp<m,n>, and sets the biological data acquisition region in the same manner as in Embodiment 1 for each partial detection region PAA as the signal intensity Speak. The peak detection period T is set to a period during which the peak value Dp can be acquired multiple times (for example, about 10 times) and is stored in the storage unit 46.

[0188] First, as an initial setting of the detection process flow shown in FIG. 25, the signal processing unit 44 resets the peak value Dp<m,n>, the peak integration value Dp_add<m,n>, the peak integration count Dp_cnt<m,n>, the timer value t of the peak detection period T, and the peak flag Flg (Dp<m,n> = 0, Dp_add<m,n> = 0, Dp_cnt<m,n> = 0, t = 0, Flg = 0) for each partial detection region PAA within the detection region AA (step S401).

[0189] In the processes from step S402 to step S417 below, the control circuit 122 continuously lights either the first light source 61 or the second light source 62, for example, in periods t(1), t(2), t(3), and t(4) shown in FIG. 10. Each detection value Raw<m,n> is temporarily stored in the storage unit 46, for example. Each detection value Raw<m,n> is stored for the number of samples P in the SSF process, that is, for P frames.

[0190] The signal processing unit 44 sets m = 1 and n = 1 (step S402), acquires the detection value Raw<m,n> (step S403), and performs LPF processing and HPF processing on the acquired detection value Raw<m,n> (step S404). Thereby, the DC component and the noise component of the detection value Raw<m,n> are removed.

[0191] The signal processing unit 44 performs SSF processing on the data after LPF processing and HPF processing using the above arithmetic expression to generate a data value D<m,n> (step S405), and determines whether the data value D<m,n> is greater than the first threshold value Dth1 (D<m,n>>Dth1) (step S406).

[0192] When the data value D<m,n> is greater than the first threshold value Dth1 (D<m,n>>Dth1) (step S406; Yes), subsequently, the signal processing unit 44 determines whether the data value D<m,n> is greater than the peak value Dp<m,n> temporarily stored in the storage unit 46 (D<m,n>>Dp<m,n>) (step S407).

[0193] When the data value D<m,n> is less than or equal to the peak value Dp<m,n> (D<m,n>≦Dp<m,n>) (step S407; No), the process proceeds to the process of step S413.

[0194] When the data value D<m,n> is greater than the peak value Dp<m,n> (D<m,n>>Dp<m,n>) (step S407; Yes), the signal processing unit 44 replaces the peak value Dp<m,n> with the data value D<m,n> (Dp<m,n>=D<m,n>), sets the peak flag Flg to "1" (Flg = 1), and temporarily stores it in the storage unit 46 (step S408).

[0195] When the data value D<m,n> is less than or equal to the first threshold value Dth1 (D<m,n>≦Dth1) (step S406; No), subsequently, the signal processing unit 44 determines whether the data value D<m,n> is greater than the second threshold value Dth2 (D<m,n>>Dth2) (step S409).

[0196] When the data value D<m,n> is greater than the second threshold value Dth2 (D<m,n>>Dth2) (step S409; Yes), the process proceeds to step S413.

[0197] When the data value D<m,n> is less than or equal to the second threshold value Dth2 (D<m,n>≦Dth2) (step S409; No), the signal processing unit 44 adds the peak value Dp<m,n> stored in the storage unit 466 to the peak integrated value Dp_add<m,n> (Dp_add<m,n>=Dp_add<m,n>+Dp<m,n>) (step S410), and adds the peak flag Flg (Flg = 1) to the peak integration count Dp_cnt<m,n> (Dp_cnt<m,n>=Dp_cnt<m,n>+Flg) (step S411). Then, the peak value Dp<m,n> and the peak flag Flg are reset (Dp<m,n>=0, Flg = 0) (step S412), and the process proceeds to step S413.

[0198] Subsequently, the signal processing unit 44 sets m=m + 1 (step S413), and determines whether m is equal to M (m = M) (step S414). If m is less than M (m<M) (step S414; No), the process returns to step S403.

[0199] When m becomes M (m = M) (step S414; Yes), subsequently, the signal processing unit 44 sets n = n + 1 (step S415) and determines whether n is N (n = N) (step S416). If n is less than N (n < N) (step S416; No), the process returns to the process of step S403.

[0200] When n becomes N (n = N) (step S416; Yes), subsequently, the signal processing unit 44 determines whether the timer value t has exceeded the peak detection period T (t > T) (step S417). If the timer value t is less than or equal to the peak detection period T (t ≤ T) (step S417; No), the process returns to the process of step S402.

[0201] By repeating the processes from step S402 to step S417, the peak integrated value Dp_add<m,n> (FIG. 28A) and the peak integration count Dp_cnt<m,n> (FIG. 28B) of the peak value Dp<m,n> in each partial detection region PAA within the detection region AA detected during the peak detection period T are temporarily stored in the storage unit 46.

[0202] When the timer value t exceeds the peak detection period T (t > T) (step S417; Yes), the signal processing unit 44 calculates the signal intensity Speak<m,n> for each partial detection region PAA within the detection region AA (Speak<m,n> = Dp_add<m,n> / Dp_cnt<m,n>) (step S418).

[0203] The signal processing unit 44 sets a biological data acquisition area for acquiring pulse wave data based on the signal intensity Speak<m,n> for each partial detection area PAA within the detection area AA extracted by the above processing (step S419). In the biological data acquisition process (step S420), the biological data acquisition area BAA stored in the storage unit 46 is read out, and pulse wave data is acquired based on the detection signal Vdet detected in the partial detection area PAA included in the biological data acquisition area BAA. As a result, similar to Embodiment 1, it is possible to acquire highly accurate pulse wave data. Note that since the biological data acquisition area setting process (step S419) and the biological data acquisition process (step S420) are the same as those in Embodiment 1, detailed descriptions thereof are omitted here.

[0204] In the above-described embodiment, an example in which a plurality of partial detection areas PAA are provided in a matrix of M columns and N rows within the detection area AA has been shown. However, for example, M partial detection areas PAA may be arranged in the first direction Dx within the detection area AA, and in this case, the biological data acquisition area BAA may be in a mode including at least the partial detection area PAA located at the signal intensity maximum coordinate Smax(m,1). Also, a mode including a plurality of partial detection areas PAA less than M, such as 3, 5, or 7, centered on the partial detection area PAA located at the signal intensity maximum coordinate Smax(m,1) may be acceptable. Further, for example, a mode in which N partial detection areas PAA are arranged in the second direction Dy within the detection area AA may be acceptable, and in this case, the biological data acquisition area BAA may be in a mode including at least the partial detection area PAA located at the signal intensity maximum coordinate Smax(1,n). Also, a mode including a plurality of partial detection areas PAA less than N, such as 3, 5, or 7, centered on the partial detection area PAA located at the signal intensity maximum coordinate Smax(1,n) may be acceptable.

[0205] Although the preferred embodiments of the present invention have been described above, the present invention is not limited to such embodiments. The content disclosed in the embodiments is merely an example, and various modifications are possible without departing from the spirit of the present invention. Appropriate modifications made without departing from the spirit of the present invention also naturally belong to the technical scope of the present invention. Within the scope not departing from the gist of each of the above-described embodiments and each modification example, at least one of various omissions, substitutions, and changes of components can be made.

Explanation of Reference Numerals

[0206] 1 Detection device 10 Sensor unit 11 Detection control unit 15 Gate line drive circuit 16 Signal line selection circuit 21 Sensor substrate 40 Detection unit 42 Detection signal amplification unit 43 A / D conversion unit 44 Signal processing unit 46 Storage unit 47 Detection timing control unit 48 Detection circuit 61 First light source (light source) 62 Second light source (light source) 122 Control circuit 123 Power supply circuit 126 Output circuit 200 Host AA Detection area GA Peripheral area GCL Gate line PD Photo sensor SGL Signal line Tr First switching element Vgcl Gate drive signal

Claims

1. A sensor unit having a detection area divided into a plurality of partial detection areas, generates frequency domain data for each of the partial detection areas, and extracts a partial detection area having a relatively large signal intensity among the plurality of partial detection areas, with the peak value within a frequency range of 0.5 [Hz] or more and less than 3 [Hz] including the pulse wave component of the detected object of the frequency domain data as the signal intensity for each of the partial detection areas, and based on the detection signal detected in the biological data acquisition area including the extracted partial detection area, a detection unit that acquires pulse wave data of the detected object; comprising a detection device.

2. A sensor unit having a detection area divided into a plurality of partial detection areas, performs peak detection processing on the data after SSF (Slope Sum Function) processing acquired for each of the partial detection areas within a predetermined period, and divides the integrated value of the peak values detected within the period by the number of peak detections, and uses the obtained value as the signal intensity for each of the partial detection areas, extracts a partial detection area having a relatively large signal intensity among the plurality of partial detection areas, and based on the detection signal detected in the biological data acquisition area including the extracted partial detection area, a detection unit that acquires pulse wave data of the detected object; comprising a detection device.

3. The plurality of partial detection areas are provided in a matrix within the detection area, The detection unit executes a comparison operation process of the signal intensity for each of the partial detection areas to extract the coordinates of the position of the partial detection area where the signal intensity becomes maximum, and sets a predetermined area centered on the extracted coordinates as the biological data acquisition area, The detection device according to claim 1 or 2.

4. The biological data acquisition area includes at least the partial detection area located at the center coordinates, The detection device according to claim 3.

5. The biological data acquisition area includes a plurality of partial detection areas including the partial detection area located at the center coordinates, The detection device according to claim 3.

6. The biological data acquisition area includes a 3-column 3-row partial detection area centered on the partial detection area located at the center coordinates, The detection device according to claim 5.

7. The biological data acquisition area includes a 5-column 5-row partial detection area centered on the partial detection area located at the center coordinates, The detection device according to claim 5.

8. The biological data acquisition area includes a 7-column 7-row partial detection area centered on the partial detection area located at the center coordinates, The detection device according to claim 5.

9. The detection unit: averages detection signals output from a plurality of partial detection regions within the biological data acquisition region to acquire the biological data. The detection device according to any one of claims 5 to 8.

10. The sensor unit includes a plurality of optical sensors respectively provided in the plurality of partial detection regions. The detection device according to any one of claims 1 to 9.

11. The optical sensor is an organic photodiode. The detection device according to claim 10.

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