Antenna device, terminator and terminal device

Abstract

An antenna device (1) equipped with one or more fed antennas (3) provided to a main surface (2a) of a substrate (2), a parasitic antenna (4) provided to the substrate (2), and a terminator (5) connected to the parasitic antenna (4) and provided to the substrate (2), wherein the terminator (5) contains an SIW (52), which is a waveguide extending inside the substrate (2).

Description

[Technical Field]

[0001] The present disclosure relates to an antenna device, a terminator, and a terminal device. [Background technology]

[0002] In order to reduce variations in the radiation characteristics of multiple power-fed antennas, an antenna device equipped with a terminated parasitic antenna (dummy antenna) is known. For example, Patent Document 1 discloses a method of terminating a parasitic antenna with a terminating antenna having a polarization orthogonal to the polarization of the power-fed antenna. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-74240 A Summary of the Invention [Problem to be solved by the invention]

[0004] In conventional termination antennas such as those disclosed in Patent Document 1, the band in which a parasitic antenna can be effectively terminated is narrow, making it difficult to suppress variations in the radiation characteristics of multiple power-fed antennas over a wide band.

[0005] One aspect of the present disclosure provides an antenna device, a terminator, and a terminal device that are capable of suppressing variations in radiation characteristics of multiple power supply antennas over a wide band. [Means for solving the problem]

[0006] An antenna device according to one aspect of the present disclosure comprises one or more powered antennas provided on a main surface of a substrate, a parasitic antenna provided on the substrate, and a terminator provided on the substrate and connected to the parasitic antenna, wherein the terminator includes a SIW that is a waveguide extending within the substrate.

[0007] An attenuator according to one aspect of the present disclosure comprises an SIW, which is a waveguide extending within a substrate, the substrate being a multilayer substrate, and the SIW including a first SIW extending through a first layer and a second SIW extending through a second layer.

[0008] An attenuator according to one aspect of the present disclosure includes an SIW, which is a waveguide extending within a substrate, and a microstrip line connected to the SIW, where the SIW has a certain width.

[0009] A terminal device according to one aspect of the present disclosure is a communication device that includes a transceiver unit, a control unit, and an antenna device, the antenna device including one or more powered antennas provided on a main surface of a substrate, a parasitic antenna provided on the main surface of the substrate, and a terminator provided on the substrate and connected to the parasitic antenna, and the terminator includes an SIW that is a waveguide extending within the substrate.

[0010] A terminal device according to one aspect of the present disclosure is a radar device that includes a transmitter, a receiver, a controller, and an antenna device, the antenna device including one or more powered antennas provided on a main surface of a substrate, a parasitic antenna provided on the main surface of the substrate, and a terminator provided on the substrate and connected to the parasitic antenna, the terminator including an SIW that is a waveguide extending within the substrate. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a diagram illustrating an example of a schematic configuration of an antenna device according to an embodiment. [Figure 2] FIG. 1 is a diagram illustrating an example of a schematic configuration of a terminator. [Figure 3] FIG. 1 is a diagram illustrating an example of a schematic configuration of a terminator. [Figure 4] FIG. 1 is a diagram illustrating an example of a schematic configuration of a terminator. [Figure 5] FIG. 10 is a diagram illustrating an example of a simulation result of SIW. [Figure 6] FIG. 10 is a diagram illustrating an example of a simulation result of SIW. [Figure 7] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 8] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 9] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 10] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 11] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 12] FIG. 1 is a diagram illustrating an example of a schematic configuration of an antenna device according to a comparative example. [Figure 13] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 14] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 15] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 16] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 17] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 18] FIG. 1 is a diagram illustrating an example of a schematic configuration of an antenna device according to a comparative example. [Figure 19] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 20] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 21] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 22] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 23] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 24] FIG. 1 is a diagram illustrating an example of a schematic configuration of an antenna device according to a comparative example. [Figure 25] FIG. 10 is a diagram showing an example of a simulation result of a termination antenna. [Figure 26] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 27]10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 28] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 29] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 30] 10A and 10B are diagrams illustrating examples of radiation characteristics of a plurality of feeding antennas. [Figure 31] FIG. [Figure 32] FIG. [Figure 33] FIG. [Figure 34] FIG. [Figure 35] FIG. [Figure 36] FIG. [Figure 37] FIG. [Figure 38] FIG. [Figure 39] FIG. [Figure 40] FIG. [Figure 41] FIG. [Figure 42] FIG. [Figure 43] FIG. [Figure 44] FIG. [Figure 45] FIG. 1 is a diagram illustrating an example of a schematic configuration of a radar device. [Figure 46] FIG. 1 is a diagram illustrating an example of a schematic configuration of a communication device. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following embodiments, the same elements are designated by the same reference numerals, and redundant description will be omitted.

[0013] The present disclosure will be described in the following order: 1. Embodiment 2. Variations 3. Application Examples 3.1 Application example to radar equipment 3.2 Application examples for communication devices 4. Effects

[0014] 1. Embodiment 1 is a diagram showing an example of the schematic configuration of an antenna device according to an embodiment. The antenna device 1 includes a substrate 2, a power-fed antenna 3, a parasitic antenna 4, and a terminator 5. An XYZ coordinate system is shown in the diagram. The X-axis and Y-axis directions correspond to the surface directions of the substrate 2. The Z-axis direction corresponds to the thickness direction of the substrate 2.

[0015] Components of the antenna device 1 are provided on the substrate 2. Examples of the components are a powered antenna 3, a parasitic antenna 4, and a terminator 5, which are formed by metal patterns, vias, etc. formed on the substrate 2. The surface of the substrate 2 facing the positive Z-axis direction is referred to as the main surface 2a and is illustrated. The surface of the substrate 2 facing the negative Z-axis direction is referred to as the back surface 2b and is illustrated. The substrate 2 may be a multilayer substrate, which will be explained again later.

[0016] The feeding antennas 3 are (e.g., multiple) feeding antennas provided (e.g., side by side) on the main surface 2a of the substrate 2. To distinguish between the feeding antennas 3, they are referred to as feeding antenna 3-1, feeding antenna 3-2, feeding antenna 3-3, and feeding antenna 3-4 in the drawings. In this example, the feeding antennas 3-1, feeding antenna 3-2, feeding antenna 3-3, and feeding antenna 3-4 are arranged in this order at equal intervals in the positive direction of the Y axis.

[0017] The feeding antenna 3 includes a plurality of patches 3a, a plurality of microstrip lines 3b, and a microstrip line 3c.

[0018] The patches 3a are arranged side by side at intervals in the X-axis direction. At least some of the patches 3a may have different shapes. In this example, each patch 3a has a rectangular shape, and the width (length in the Y-axis direction) of the patch 3a increases toward the center of the feed antenna 3 so that the area of the patch 3a increases.

[0019] Each microstrip line 3b is connected between adjacent patches 3a. The line width of the microstrip line 3b may be smaller than the width of the patch 3a.

[0020] The microstrip line 3c is connected to port P. In this example, the microstrip line 3c is connected between the patch 3a located at the end of the feeding antenna 3 and port P. In order to distinguish between the ports P connected to feeding antennas 3-1, 3-2, 3-3, and 3-4, they are referred to as port P-1, port P-2, port P-3, and port P-4 in the drawings.

[0021] Port P-1, port P-2, port P-3, and port P-4 may be feed points. Feed antenna 3-1, feed antenna 3-2, feed antenna 3-3, and feed antenna 3-4, each connected to a different feed point, are used as, for example, a MIMO (Multiple Input Multiple Output) antenna.

[0022] The parasitic antenna 4 is provided on the main surface 2a of the substrate 2, for example, following the arrangement of the multiple fed antennas 3. In this example, the parasitic antenna 4 is provided further outside the outermost fed antennas 3-1 and 3-4 of the multiple fed antennas 3. The parasitic antenna 4 is a dummy antenna, and differs from the fed antenna 3 in that it is not connected to a feed point but is connected to a terminator 5. Except for the configuration related to the connection to the terminator 5, the parasitic antenna 4 may have the same configuration as the fed antenna 3.

[0023] 1 illustrates parasitic antennas 4 as parasitic antennas 4. Parasitic antenna 4-1 and parasitic antenna 4-2 are a pair of parasitic antennas arranged to sandwich multiple fed antennas 3. Parasitic antenna 4-1 is arranged on the opposite side of fed antenna 3-2 across fed antenna 3-1. Parasitic antenna 4-2 is arranged on the opposite side of fed antenna 3-3 across fed antenna 3-4. Parasitic antenna 4-1, fed antenna 3-1, fed antenna 3-2, fed antenna 3-3, fed antenna 3-4, and parasitic antenna 4-2 are arranged in this order at equal intervals in the positive direction of the Y axis.

[0024] The technical significance of the parasitic antenna 4 will now be described. Without the parasitic antenna 4, the antenna layout would be asymmetric. Specifically, while the fed antennas 3-2 and 3-3 each have another antenna on both sides, the fed antennas 3-1 and 3-4 only have another antenna on one side. This asymmetric antenna layout affects the balance of coupling between the antennas, causing variations in the radiation characteristics of the multiple fed antennas 3.

[0025] In contrast, the presence of the parasitic antenna 4 means that another antenna is placed on either side of each of the multiple fed antennas 3. This allows for a symmetrical antenna layout, which can reduce variations in the radiation characteristics of the multiple fed antennas 3. However, to enhance this reduction effect, the parasitic antenna 4 needs to be terminated. In the antenna device 1 according to this embodiment, a terminator 5, which will be described next, is used to terminate the parasitic antenna 4.

[0026] The terminators 5 are provided on the substrate 2 and connected to the corresponding parasitic antennas 4. To distinguish between the terminators 5, they are shown as terminators 5-1 and 5-2. The terminator 5-1 corresponds to the parasitic antenna 4-1. The terminator 5-2 corresponds to the parasitic antenna 4-2.

[0027] The terminator 5 includes a microstrip line 51 and an SIW 52. The microstrip line 51 is connected between the parasitic antenna 4 and the SIW 52. The SIW 52 is a substrate integrated waveguide (SIW) extending within the substrate 2. The width of the SIW 52 may be different from the width of the microstrip line 51. In this example, the width of the SIW 52 is greater than the width of the microstrip line 51. The terminator 5 including the microstrip line 51 and the SIW 52 will be described with reference to FIGS. 2 to 4.

[0028] 2 to 4 are diagrams showing examples of the schematic configuration of a terminator. Fig. 2 shows a schematic exploded perspective view of terminator 5. Fig. 3 shows a schematic partial cross-sectional view of the terminator, with the waveguide paths conceptually indicated by arrows. Fig. 4 shows a schematic partial plan view of the terminator.

[0029] In this example, the substrate 2 is a multilayer substrate and includes layers L1-2, L2-3, and L3-4 located in this order from the main surface 2a to the back surface 2b of the substrate 2 (toward the negative Z-axis direction). Layer L1-2 is the first layer located on the uppermost side (positive Z-axis direction). The upper surface of layer L1-2 is the main surface 2a of the substrate 2. Layers L2-3 and L3-4 are located closer to the back surface 2b of the substrate 2 than layer L1-2. Of these, layer L2-3 is the second layer located between layers L1-2 and L3-4. Layer L3-4 is the third layer located on the lowermost side (negative Z-axis direction). The lower surface (negative Z-axis direction) of layer L3-4 is the back surface 2b of the substrate 2. Layers L1-2, L2-3, and L3-4 may all have the same thickness.

[0030] The microstrip line 51 includes a first portion 511 and a second portion 512. The first portion 511 has the same width as, for example, the microstrip line 4c (FIG. 1) of the parasitic antenna 4 and is connected to the microstrip line 4c. The second portion 512 is connected between the first portion 511 and the SIW 52. The second portion 512 has a tapered shape. Specifically, the width of the second portion 512 changes in a tapered shape so as to fill the difference between the widths of the first portion 511 and the SIW 52 (so as to fill the difference in characteristic impedance). In this example, the width of the second portion 512 increases from the first portion 511 toward the SIW 52.

[0031] The SIW 52 includes a plurality of SIWs extending through each layer in the substrate 2. In this example, the SIW 52 includes an SIW 521, an SIW 522, and an SIW 523.

[0032] The SIW 521 is connected to the second portion 512 of the microstrip line 51 and extends on the layer L1-2. In this example, the SIW 521 has a constant width and extends straight in the positive direction of the X-axis. The SIW 521 includes an upper pattern 521a, a lower pattern 521b, a via 521c, and an opening 521d.

[0033] The upper pattern 521a and the lower pattern 521b define the side surfaces of the SIW 521 that extend in the XY plane. In this example, the upper pattern 521a is part of a metal pattern formed on the upper surface (positive Z-axis direction) of the layer L1-2, i.e., on the main surface 2a of the substrate 2. The lower pattern 521b is part of a metal pattern formed on the lower surface (negative Z-axis direction) of the layer L1-2.

[0034] The vias 521c define the side surfaces extending in the Z-axis direction among the side surfaces of the SIW 521. In this example, the vias 521c are a plurality of vias that connect the outer edge of the upper pattern 521a and the outer edge of the lower pattern 521b. The plurality of vias are formed (triple in this example) along the outer edges of the upper pattern 521a and the lower pattern 521b.

[0035] The opening 521d is located at the tip end (the end on the positive X-axis direction) of the SIW 521 and connects the SIW 521 to the SIW 522 in series. In this example, the opening 521d is a slit formed in the lower pattern 521b. The opening 521d, together with an opening 522d described below, connects the layer L1-2 to the layer L2-3. The width (length in the Y-axis direction) of the opening 521d may be the same as the width of the SIW 521.

[0036] The SIW 522 is connected to the SIW 521 and extends on the layer L2-3. In this example, the SIW 522 has a constant width and extends straight in the opposite direction (negative direction of the X-axis) to the extension direction of the SIW 521 (positive direction of the X-axis). The length of the SIW 522 may be the same as the length of the SIW 521. The SIW 522 includes an upper pattern 522a, a lower pattern 522b, a via 522c, an opening 522d, and an opening 522e.

[0037] The upper pattern 522a and the lower pattern 522b define the side surfaces of the SIW 522 that extend in the XY plane. In this example, the upper pattern 522a is part of a metal pattern formed on the upper surface of the layer L2-3. The lower pattern 522b is part of a metal pattern formed on the lower surface of the layer L3-4.

[0038] The vias 522c define the side surfaces of the SIW 522 that extend in the Z-axis direction. In this example, the vias 522c are multiple vias that connect the outer edge of the upper pattern 522a and the outer edge of the lower pattern 522b. The multiple vias are formed along the outer edges of the upper pattern 522a and the lower pattern 522b (triple in this example). The vias 522c may be formed integrally with the vias 521c.

[0039] The opening 522d is located at the base end (the end on the positive X-axis direction) of the SIW 522 and connects the SIW 522 to the SIW 521 in series. In this example, the opening 522d is a slit formed in the upper pattern 522a. The opening 522d, together with the opening 521d, connects the layer L2-3 to the layer L1-2. The width of the opening 521d may be the same as the width of the SIW 522.

[0040] The opening 522e is located at the tip end (the end on the negative X-axis direction) of the SIW 522 and connects the SIW 522 to the SIW 523 in series. In this example, the opening 522e is a slit formed in the lower pattern 522b. The opening 522e, together with an opening 523d described below, connects the layer L2-3 to the layer L3-4. The width of the opening 522e may be the same as the width of the SIW 522.

[0041] The SIW 523 is connected to the SIW 522 and extends through the layer L3-4. In this example, the SIW 523 has a constant width and extends straight in the opposite direction (positive direction of the X-axis) to the extension direction of the SIW 522 (negative direction of the X-axis). The length of the SIW 523 may be the same as the length of the SIW 522. The SIW 523 includes an upper pattern 532a, a lower pattern 532b, a via 532c, and an opening 523d.

[0042] The upper pattern 523a and the lower pattern 523b define the side surfaces of the SIW 523 that extend in the XY plane. In this example, the upper pattern 523a is part of a metal pattern formed on the upper surface of the layer L3-4. The lower pattern 523b is part of a metal pattern formed on the lower surface of the layer L3-4.

[0043] The vias 523c define the side surfaces of the SIW 523 that extend in the Z-axis direction. In this example, the vias 523c are multiple vias that connect the outer edge of the upper pattern 523a and the outer edge of the lower pattern 523b. The multiple vias are formed along the outer edges of the upper pattern 523a and the lower pattern 523b (triple in this example). The vias 523c may be formed integrally with the vias 522c.

[0044] The length of SIW52 is equal to the total length of SIW521, SIW522, and SIW523 connected in series. In the above example, SIW521 and SIW523 extend in the same direction (positive direction of the X-axis), and SIW522 extends in the opposite direction (negative direction of the X-axis). In this case, when the substrate 2 is viewed in a plan view (when viewed in the Z-axis direction), SIW521, SIW522, and SIW523 overlap (at least partially overlap) (even in areas other than the openings). The degree of overlap increases as the lengths and widths of SIW521, SIW522, and SIW523 become closer. When SIW521, SIW522, and SIW523 have the same length and width, SIW521, SIW522, and SIW523 completely overlap when the substrate 2 is viewed in a plan view.

[0045] The SIW 52 described above provides a large amount of attenuation over a wide band, which will be explained with reference to FIGS.

[0046] Figure 5 shows an example of the simulation results of SIW. Some simulation conditions are as follows: the relative dielectric constant ε r is 3.36, the thickness of the substrate is 78 μm, the width of the SIW is 1.15 mm, and the length of the SIW is 1 cm. The horizontal axis of the graph represents frequency (GHz), and the vertical axis of the graph represents the magnitude (dB) of S11 and S21.

[0047] SIWs have a cutoff frequency. The cutoff frequency is determined mainly by the dimensions (width, etc.) of the SIW and the dielectric constant of the substrate material. In this example, the cutoff frequency is approximately 72 GHz. At frequencies higher than the cutoff frequency, the attenuation (loss) increases as the frequency approaches the cutoff frequency, but attenuation still exists even at frequencies some distance from the cutoff frequency. In this example, even at frequencies above 77 GHz, an attenuation of approximately -4 dB is obtained over a wide band. This attenuation is significantly greater than, for example, the attenuation of a microstrip line (e.g., approximately -1.3 dB / cm).

[0048] 6 shows an example of a simulation result of the SIW 52 of the terminator 5 shown in FIGS. 2 to 4. The relative dielectric constant ε of the substrate 2 r is 3.36, each layer thickness (corresponding to the height of each of SIW521 to SIW523) is 78 μm, each of SIW521 to SIW523 has a width of 1.15 mm, and each of SIW521 to SIW523 has a length of 1 cm. The horizontal axis of the graph represents frequency (GHz), and the vertical axis of the graph represents return loss level (dB).

[0049] As shown in Fig. 6, a return loss of -15 dB or less is obtained over a wide frequency band of 76 GHz to 81 GHz. A return loss of -10 dB or less is also obtained over a frequency band of 73 GHz to 89 GHz.

[0050] In this way, the SIW 52 provides a large amount of attenuation over a wide band, and the terminator 5 terminates the parasitic antenna 4 over a wide band. As a result, variations in the radiation characteristics of the multiple power-fed antennas 3 are suppressed over a wide band. Examples of suppression of variations by the antenna device 1 will be described with reference to FIGS. 7 to 11. Note that, hereinafter, variations in the radiation characteristics of the multiple power-fed antennas 3 may also be simply referred to as "variations in radiation characteristics."

[0051] 7 to 11 are diagrams showing examples of radiation characteristics of multiple power supply antennas. The horizontal axis of the graph represents angle (°), and the vertical axis of the graph represents antenna gain (dBi). The angles are angles on the YZ plane, with an angle of 0° corresponding to the positive direction of the Z axis, an angle of 90° corresponding to the negative direction of the Y axis, and an angle of -90° corresponding to the positive direction of the Y axis.

[0052] 7 to 11 show the radiation characteristics of the feeding antennas 3-1, 3-2, 3-3, and 3-4 at frequencies between 77 GHz and 81 GHz. As will be understood from comparison with several comparative examples described below, the variations in the radiation characteristics are suppressed to a level close to the ideal state. As comparative examples, the antenna device 1X-1 (FIG. 12), the antenna device 1X-2 (FIG. 18), and the antenna device 1X-3 (FIG. 24) will be described as examples.

[0053] The antenna device 1X-1 illustrated in Fig. 12 does not have the parasitic antenna 4 or terminator 5 as in the antenna device 1 (Fig. 1). Figs. 13 to 17 illustrate the radiation characteristics of the multiple power-fed antennas 3 in the antenna device 1X-1. The variation in radiation characteristics in the antenna device 1 according to the embodiment described above (Figs. 7 to 11) is more suppressed than the variation in radiation characteristics in the antenna device 1X-1.

[0054] In the antenna device 1X-2 illustrated in FIG. 18, the parasitic antenna 4 is connected to ports P5 and P6 instead of the terminator 5. Ports P5 and P6 function as ideal terminators (with infinite return loss at any frequency). FIGS. 19 to 23 illustrate the radiation characteristics of the multiple power-fed antennas 3 in the antenna device 1X-2. The variation in radiation characteristics in the antenna device 1 according to the embodiment described above (FIGS. 7 to 11) has been reduced to a level close to the variation in radiation characteristics in the antenna device 1X-2.

[0055] In the antenna device 1X-3 shown in Fig. 24, the parasitic antenna 4 is terminated by a terminating antenna ANT rather than a terminator 5. The terminating antenna ANT is an antenna with a polarization orthogonal to the polarization of the power-fed antenna 3, as shown in Patent Document 1. Fig. 25 is a diagram showing an example of a simulation result of the termination characteristics of the terminating antenna ANT shown in Fig. 24 above. A return loss of -10 dB or less can only be obtained in a narrow bandwidth (about 2 GHz) centered around the resonant frequency of 79 GHz.

[0056] 26 to 30 illustrate the radiation characteristics of the multiple power supply antennas 3 in the antenna device 1X-3. The variation in the radiation characteristics in the antenna device 1 according to the previously described embodiment (FIGS. 7 to 11) is suppressed more than the variation in the radiation characteristics in the antenna device 1X-3. The suppression effect becomes more pronounced as the frequency moves away from the resonant frequency of the terminating antenna ANT, 79 GHz. This is because the terminator 5 of the antenna device 1 provides a larger amount of attenuation across a wider band than the terminating antenna ANT of the antenna device 1X-3.

[0057] As described above, according to the antenna device 1 of the embodiment, the terminator 5 terminates the parasitic antenna 4 over a wide band, and variations in radiation characteristics are suppressed.

[0058] Furthermore, in the antenna device 1X-3 according to the comparative example described above with reference to Fig. 24 etc., re-radiation occurs from the termination antenna ANT, which may cause deterioration of the characteristics of the antenna device 1. With the antenna device 1 according to the embodiment, such a problem does not occur.

[0059] Furthermore, according to the antenna device 1, the terminator 5 is configured using the SIW 52, and is therefore integrated into the substrate 2. This allows for a reduction in the size of the antenna device 1. In particular, since the substrate 2 is a multilayer substrate and the SIW 52 includes SIWs 521, 522, and 523 that each extend through a different layer, the degree of integration of the SIW 52 into the substrate 2 can be increased, and the antenna device 1 can be further reduced in size.

[0060] 2. Variations Some modified examples will be described with reference to FIGS. 31 to 44. An SIW may be provided on the substrate 2 so as to extend within the substrate 2 in various ways. The SIW 52A illustrated in FIG. 31 extends within the substrate 2 so as to avoid the wiring W provided on the substrate 2. Examples of the wiring W include signal lines and power supply lines. In this example, the SIW 52A extends through the layer L1-2, transitions from the layer L1-2 to the layer L2-3, and extends through the layer L2-3 so as to avoid the wiring W provided on the upper surface of the layer L1-2. Furthermore, the SIW 52A transitions from the layer L2-3 to the layer L3-4 and extends through the layer L3-4 so as to avoid the wiring W provided on the upper surface of the layer L2-3 (or the lower surface of the layer L1-2).

[0061] 32 shifts to another layer to avoid the wiring W, and after avoiding the wiring W, shifts back to the original layer and extends. In this example, SIW52B shifts from layer L1-2 to layer L2-3 to avoid the wiring W provided on the upper surface of layer L1-2, and extends through layer L2-3. After avoiding the wiring W, SIW52B shifts from layer L2-3 to layer L1-2, and extends through layer L1-2 again.

[0062] The SIW may extend within the substrate 2 while curving, bending, branching, etc. The SIW 52C illustrated in FIG. 33 has a curved portion. However, the degree of curvature (radius of curvature, etc.) is not limited to the example illustrated in FIG. 33. The SIW 52D illustrated in FIG. 34 has a bent portion that bends at approximately 90°. However, the bending angle is not limited to the example illustrated in FIG. 34. The SIW 52E illustrated in FIG. 35 has a branch portion that branches into a T-shape. However, the branching mode is not limited to the example illustrated in FIG. 35.

[0063] Various modes may also be adopted for the arrangement of the terminator 5 relative to the parasitic antenna 4. For example, the orientation of the terminator 5 is not limited to the example shown in FIG. 1. As illustrated in FIG. 36, the terminator 5 may be provided relative to the parasitic antenna 4 so that the extension direction of the terminator 5 intersects with the extension direction of the parasitic antenna 4. Depending on the change in arrangement, the layout of the connection portion (microstrip line) between the parasitic antenna 4 and the terminator 5 may be changed as appropriate. As illustrated in FIG. 37, the terminator 5 may be provided on an extension line of the extension direction of the parasitic antenna 4. As illustrated in FIG. 38, the terminator 5 may be connected to the end (end on the positive X-axis side) opposite to the end (end on the negative X-axis side) of the parasitic antenna 4 described above.

[0064] The parasitic antennas 4 may share one terminator. In the example shown in Fig. 39, one terminator having two inputs is shared by the parasitic antennas 4-1 and 4-2. This terminator can be said to have the functions of both the above-mentioned terminators 5-1 and 5-2, and is therefore shown using those reference numerals.

[0065] Additional parasitic antennas 4 and terminators 5 may be provided. In the example shown in FIG. 40, parasitic antennas 4-3 and 4-4, and corresponding terminators 5-3 and 5-4 are further provided. The parasitic antenna 4-3 is provided on the opposite side of the parasitic antenna 4-1 from the fed antenna 3-1 and is terminated by the terminator 5-3. The parasitic antenna 4-4 is provided on the opposite side of the parasitic antenna 4-2 from the fed antenna 3-4 and is terminated by the terminator 5-4. The terminators 5-1 and 5-3 are arranged adjacent to each other so as to share at least a portion of the via. The terminators 5-2 and 5-4 are arranged adjacent to each other so as to share at least a portion of the via.

[0066] The terminator 5 may be provided on the substrate 2 so as to reduce the area of the main surface 2a of the substrate 2 occupied by the terminator 5. The terminator 5A illustrated in FIG. 41 has a smaller pattern area on the main surface 2a of the substrate 2 used than the terminator 5 (FIG. 1, etc.). Of the two terminators 5A shown, the terminator 5A-1 corresponds to the parasitic antenna 4-1, and the terminator 5A-2 corresponds to the parasitic antenna 4-2. The terminator 5A has a configuration in which, for example, the SIW 521 of the terminator 5 (FIG. 2, etc.) is shorter than the SIW 522 and the SIW 523.

[0067] 42, a parasitic antenna 4-3 and a parasitic antenna 4-4, and corresponding terminators 5A-3 and 5-4A are further provided. Terminators 5A-1 and 5A-3 are arranged adjacent to each other so as to share at least a portion of a via. Terminators 5A-2 and 5A-4 are arranged adjacent to each other so as to share at least a portion of a via.

[0068] 43, terminators 5A-1 and 5A-2 are provided corresponding to parasitic antennas 4-1 and 4-2, and terminators 5-3 and 5-4 are provided corresponding to parasitic antennas 4-3 and 4-4. A portion of the SIW of terminator 5A-1 extends below (toward the negative Z-axis direction) the SIW of terminator 5-3. A portion of the SIW of terminator 5A-3 extends below the SIW of terminator 5-4.

[0069] Figure 44 shows a schematic partial cross-sectional view of terminators 5A-1 and 5-3 taken along line XXXXIV in Figure 43. In this example, the SIW of terminator 5A-1 extends a short distance through layer L1-2, then immediately transitions to layer L2-3 and continues through layer L2-3. The portion of the SIW of terminator 5A-1 that extends through layer L2-3 is located below the SIW of terminator 5-3 that extends through layer L1-2. The same applies to terminators 5A-2 and 5-4 (Figure 43).

[0070] Although the embodiments of the present disclosure have been described above, the technical scope of the present disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist of the present disclosure. Furthermore, components of different embodiments and modifications may be combined as appropriate.

[0071] In the above embodiment, an example has been described in which the substrate 2 is a three-layer substrate including layers L1-2, L2-3, and L3-4, but the number of layers of the substrate 2 is not particularly limited. The substrate 2 may be a single-layer substrate, a two-layer substrate, or a multilayer substrate having four or more layers. The SIW 52 of the terminator 5 may include SIWs in a number corresponding to the number of layers of the substrate 2.

[0072] In the above embodiment, an example in which the number of feeding antennas 3 is four has been described, but the number of feeding antennas 3 is not particularly limited. The number of feeding antennas 3 may be any integer equal to or greater than one.

[0073] In the above embodiment, the frequency band of the antenna device 1 has been mainly described as 77 GHz to 81 GHz. However, the frequency band of the antenna device 1 may be changed as appropriate depending on the application of the antenna device 1. For example, as will be described later, the antenna device 1 may be used in a radar device, a communication device, etc. In such a case, the frequency band of the antenna device 1 is determined to be compatible with the frequency band of the radar device, the communication device, etc. Examples of frequency bands for radar devices include the 79 GHz band (77 GHz to 81 GHz) described above, as well as the 76 GHz band (76 GHz to 77 GHz), the 24 GHz band (24.05 GHz to 24.25 GHz), and the 60 GHz band (60 GHz to 61 GHz). Examples of frequency bands for communication devices include the 28 GHz band (27.0 GHz to 29.5 GHz) and the 60 GHz band (57 GHz to 64 GHz).

[0074] 3. Application Examples 3.1 Application example to radar equipment An example of application to a radar device will be described with reference to FIG.

[0075] 45 is a block diagram showing an example of a schematic configuration of a radar device 8. The radar device 8 includes a transmitter 81, an antenna device 82, an antenna device 83, a receiver 84, and a controller 85.

[0076] The transmitter 81 performs transmission processing. The transmission processing may include modulation processing, frequency conversion processing (up-conversion), amplification processing, filtering processing, etc. An example of modulation is FM modulation, but various other modulation methods suitable for radar may also be used.

[0077] The antenna device 82 transmits (radiates) a transmission signal. The antenna device 83 receives a portion of the transmission signal transmitted from the antenna device 82 that is reflected by an object (not shown). Examples of the object include a vehicle, a person, a building, etc.

[0078] The receiving unit 84 performs reception processing, which may include amplification, filtering, frequency conversion (down-conversion), demodulation, and the like.

[0079] The control unit 85 performs overall control of the radar device 8. The control by the control unit 85 includes processing of transmitted signals by the transmitting unit 81 and processing of received signals by the receiving unit 84. The signal processing includes, for example, detection of the distance to an object (ranging), detection of the orientation of the object (positioning), etc. Fig. 44 shows a ranging and positioning unit 85a as an example of a functional block that performs such signal processing (ranging and / or positioning). The ranging and positioning techniques themselves are well known, so detailed explanations will be omitted here.

[0080] In the above-described radar device 8, the antenna device 1 (FIG. 1) according to the embodiment described above is used as, for example, the antenna device 82 and / or the antenna device 83. This suppresses variations in the radiation characteristics of the multiple power supply antennas 3 over a wide band. If the variations in the radiation characteristics are large, problems may occur in signal processing, etc., and the radar performance may deteriorate. However, by suppressing the variations in the radiation characteristics, such problems are also suppressed. As a result, the radar performance of the radar device 8 can be improved.

[0081] 3.2 Application examples for communication devices An example of application to a communication device will be described with reference to FIG.

[0082] 46 is a block diagram showing an example of a schematic configuration of a communication device 9. The communication device 9 is, for example, a mobile terminal device such as a smartphone, and includes a transmitting / receiving unit 91, an antenna device 92, and a control unit 93.

[0083] The transmitting / receiving unit 91 performs transmission and reception processing, which may include modulation and demodulation processing, frequency conversion processing (up-conversion, down-conversion), amplification processing, filtering processing, and the like.

[0084] The antenna device 92 transmits a transmission signal to a communication partner device. An example of the communication partner device is a base station. The antenna device 92 receives a signal from the communication partner device.

[0085] The control unit 93 performs overall control of the communication device 9. The control by the control unit 93 includes processing of transmitted and received signals. For example, the control by the control unit 93 also includes processing of various information obtained by transmission and reception. FIG. 45 shows an information processing unit 93a as an example of a functional block that performs information processing.

[0086] In the above-described communication device 9, the antenna device 1 (FIG. 1) according to the embodiment described above is used, for example, as the antenna device 92. Since variations in the radiation characteristics of the multiple power supply antennas 3 are suppressed across a wide band, the wireless communication performance of the communication device 9 can be improved.

[0087] The antenna device 1 according to the embodiment can be applied to various technologies other than the above-described radar device and communication device. For example, the antenna device 1 may be used in a robot, an unmanned aerial vehicle, etc.

[0088] 4. Effects The antenna device 1 described above is specified, for example, as follows. As described with reference to FIG. 1 etc., the antenna device 1 includes one or more feed antennas 3 provided (for example, side by side) on the main surface 2a of the substrate 2, a parasitic antenna 4 provided on the main surface 2a of the substrate 2 (for example, further outside the outermost feed antenna 3 of the multiple feed antennas 3), and a terminator 5 provided on the substrate 2 and connected to the parasitic antenna 4. The terminator 5 includes an SIW 52 that is a waveguide extending within the substrate 2.

[0089] According to the antenna device 1, the parasitic antenna 4 is terminated over a wide band by the terminator 5 including the SIW 52. As a result, as previously described with reference to, for example, FIGS. 7 to 11, variations in the radiation characteristics of the multiple power-fed antennas 3 can be suppressed over a wide band.

[0090] Furthermore, in the antenna device 1X-3 according to the comparative example described above with reference to Fig. 24 etc., re-radiation occurs from the termination antenna ANT, which may cause deterioration of the characteristics of the antenna device 1. With the antenna device 1 described above, such a problem does not occur.

[0091] Furthermore, in the antenna device 1, the terminator 5 including the SIW 52 is integrated on the substrate 2, and therefore the antenna device 1 can be made smaller.

[0092] 2 and 3, the substrate 2 is a multilayer substrate, and the SIW 52 may include an SIW 521 extending through a layer L1-2 (first layer) and an SIW 522 extending through a layer L2-3 (second layer). By including multiple SIWs in the SIW 52, each extending through a different layer of the substrate 2, the degree of integration of the terminator 5 on the substrate 2 can be increased. As a result, the terminator 5, and therefore the antenna device 1, can be further miniaturized.

[0093] 2 and 3, the SIW 521 and the SIW 522 may be connected in series via the openings 521d and 522d that connect the layer L1-2 and the layer L2-3. This ensures the length of the SIW 52 and provides a large amount of attenuation. Furthermore, by connecting multiple SIWs in series, each extending through a different layer of the substrate 2, the characteristic impedance can be kept constant (preventing impedance mismatch) and reflection can be suppressed more effectively than when the SIWs are connected in parallel.

[0094] 2 and 3, the SIW 522 may extend in the opposite direction (negative direction of the X-axis) to the direction in which the SIW 521 extends (positive direction of the X-axis). When the substrate 2 is viewed in plan, the SIW 521 and the SIW 522 may at least partially overlap. This reduces the area of the SIW 52 on the substrate 2, and further increases the degree of integration of the terminator 5 on the substrate 2. As a result, the terminator 5, and therefore the antenna device 1, can be further miniaturized.

[0095] 2, 3, 41 to 44, etc., the SIW 521 extending through the layer L1-2 may be shorter than the SIW 522 extending through the layer L2-3, thereby making it possible to reduce the area of the main surface 2a of the substrate 2 occupied by the terminator 5.

[0096] As described with reference to FIGS. 1 and 2, the SIW 52 may have a certain width. The terminator 5 may include a microstrip line 51 connected between the parasitic antenna 4 and the SIW 52. This allows, for example, the SIW 52, which has a width that provides a desired amount of attenuation, to be directly connected to the parasitic antenna 4 via the microstrip line 51. The microstrip line 51 may include a portion (second portion 512) having a tapered shape. This allows for improved matching between the microstrip line 51 and the SIW 52.

[0097] As described with reference to FIG. 45 etc., the antenna device 1 may be mounted in a radar device 8 (for example, as the antenna device 82 and / or the antenna device 83). This can improve the radar performance of the radar device 8. As described with reference to FIG. 46 etc., the antenna device 1 may be mounted in a communication device 9 (for example, as the antenna device 92). This can improve the wireless communication performance of the communication device 9.

[0098] The terminator 5 described with reference to Figures 1 and 2 is also one aspect of the present disclosure. That is, the terminator 5 includes an SIW 52, which is a waveguide extending within the substrate 2. The substrate 2 is a multilayer substrate, and the SIW 52 includes an SIW 521 extending through the layer L1-2 (first layer) and an SIW 522 extending through the layer L2-3 (second layer). As described above, such a terminator 5 provides a large amount of attenuation over a wide band. For example, by using the terminator 5 in the antenna device 1, variations in the radiation characteristics of the multiple power supply antennas 3 can be suppressed.

[0099] The terminator 5 may be specified as follows: the terminator 5 includes an SIW 52, which is a waveguide extending within the substrate 2, and a microstrip line 51 connected to the SIW 52, and the SIW 52 has a certain width. This allows the SIW 52, which has a width that provides a desired amount of attenuation, to be directly connected to a termination target (e.g., a parasitic antenna) via the microstrip line 51.

[0100] 1, 46, etc. is also one aspect of a terminal device. That is, the terminal device is a communication device 9 that includes a transceiver unit 91, a control unit 93, and an antenna device 92. The antenna device 92 includes one or more power-fed antennas 3 provided on the main surface 2a of the substrate 2, a parasitic antenna 4 provided on the main surface 2a of the substrate 2, and a terminator 5 that is provided on the substrate 2 and connected to the parasitic antenna 4, and the terminator 5 includes an SIW 52 that is a waveguide extending within the substrate 2. As described above, such a communication device 9 can also suppress variations in the radiation characteristics of the multiple power-fed antennas 3 over a wide band.

[0101] 1, 45, etc. is also one aspect of a terminal device. That is, the terminal device is a radar device 8 that includes a transmitter 81, a receiver 84, a controller 85, and an antenna device 82 and / or an antenna device 83. The antenna device 82 and / or the antenna device 83 includes one or more power-fed antennas 3 provided on the main surface 2 a of the substrate 2, a parasitic antenna 4 provided on the main surface 2 a of the substrate 2, and a terminator 5 that is provided on the substrate 2 and connected to the parasitic antenna 4, and the terminator 5 includes an SIW 52 that is a waveguide extending within the substrate 2. As described above, such a radar device 8 can also suppress variations in the radiation characteristics of the multiple power-fed antennas 3 over a wide band.

[0102] The effects described in this disclosure are merely examples and are not limited to the disclosed contents. Other effects may also be present.

[0103] Although the embodiments of the present disclosure have been described above, the technical scope of the present disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist of the present disclosure. Furthermore, components of different embodiments and modifications may be combined as appropriate.

[0104] The present technology can also be configured as follows. (1) one or more feed antennas provided on a main surface of the substrate; a parasitic antenna provided on the main surface of the substrate; a terminator provided on the substrate and connected to the parasitic antenna; Equipped with The terminator includes a SIW that is a waveguide extending within the substrate. Antenna device. (2) the substrate is a multilayer substrate, The SIW is a first SIW extending through a first layer of the substrate; a second SIW extending through a second layer of the substrate; Including, The antenna device described in (1). (3) the first SIW and the second SIW are connected in series via an opening that communicates between the first layer and the second layer; The antenna device described in (2). (4) The second SIW extends in a direction opposite to the extension direction of the first SIW. An antenna device according to (2) or (3). (5) When the substrate is viewed from above, at least a part of the first SIW and the second SIW overlap with each other. The antenna device according to (4). (6) The first SIW extending through the first layer is shorter than the second SIW extending through the second layer. The antenna device according to any one of (2) to (4). (7) The SIW has a constant width. The antenna device according to any one of (1) to (6). (8) The terminator includes a microstrip line connected between the parasitic antenna and the SIW. The antenna device according to any one of (1) to (7). (9) the microstrip line includes a portion having a tapered shape; The antenna device according to (8). (10) Installed in radar equipment, The antenna device according to any one of (1) to (9). (11) Installed in communication equipment, The antenna device according to any one of (1) to (9). (12) The SIW is a waveguide extending within a substrate; the substrate is a multilayer substrate, The SIW is a first SIW extending through the first layer; a second SIW extending through the second layer; and Including, Terminator. (13) SIW, which is a waveguide extending within a substrate; a microstrip line connected to the SIW; Equipped with The SIW has a constant width. Terminator. (14) A communication device, a transmitter / receiver unit, a controller unit, and an antenna device; The antenna device includes: one or more feed antennas provided on a main surface of the substrate; a parasitic antenna provided on the main surface of the substrate; a terminator provided on the substrate and connected to the parasitic antenna; Equipped with The terminator includes a SIW that is a waveguide extending within the substrate. Terminal device. (15) A radar device, a transmitter, a receiver, a controller, and an antenna device; The antenna device includes: one or more feed antennas provided on a main surface of the substrate; a parasitic antenna provided on the main surface of the substrate; a terminator provided on the substrate and connected to the parasitic antenna; Equipped with The terminator includes a SIW that is a waveguide extending within the substrate. Terminal device. [Explanation of symbols]

[0105] 1 Antenna device 2 boards 3 Powered antenna 4. Parasitic antenna 5 Terminator 8. Radar equipment 9. Communication Equipment 51 Microstrip Line 52 SIW 81 Transmitter 82 Antenna equipment 83 Antenna equipment 84 Receiving unit 85 Control Unit 91 Transmitter / Receiver 92 Antenna equipment 93 Control Unit 521 SIW 521a Upper pattern 521b Lower pattern 521c via 521d opening 522 SIW 522a Upper pattern 522b Lower pattern 522c via 522d opening 522e opening 523 SIW 523a Upper pattern 523b Lower pattern 523c via 523d opening

Claims

1. one or more feed antennas provided on a major surface of the substrate; a parasitic antenna provided on the main surface of the substrate; a terminator provided on the substrate and connected to the parasitic antenna; An antenna device comprising: the terminator includes a SIW that is a waveguide extending within the substrate; the substrate is a multilayer substrate, The SIW is a first SIW extending through a first layer of the substrate; a second SIW extending through a second layer of the substrate; Including, the first SIW and the second SIW are connected in series via an opening that communicates between the first layer and the second layer; the antenna device includes an additional terminator separate from the terminator and including a SIW extending within the substrate; a portion of the SIW of the terminator extends below the SIW of the additional terminator; Antenna device.

2. The second SIW extends in a direction opposite to the extension direction of the first SIW. The antenna device according to claim 1 .

3. When the substrate is viewed from above, at least a portion of the first SIW and the second SIW overlap with each other. The antenna device according to claim 2 .

4. the first SIW extending through the first layer is shorter than the second SIW extending through the second layer; The antenna device according to claim 1 .

5. The SIW has a constant width. The antenna device according to claim 1 .

6. the terminator includes a microstrip line connected between the parasitic antenna and the SIW; The antenna device according to claim 1 .

7. the microstrip line includes a portion having a tapered shape; 7. The antenna device according to claim 6.

8. Installed in radar equipment, The antenna device according to claim 1 .

9. Installed in communication equipment, The antenna device according to claim 1 .

10. A termination device including an SIW, which is a waveguide extending within a substrate, the substrate is a multilayer substrate, The SIW is a first SIW extending through the first layer; a second SIW extending through the second layer; and Including, the first SIW and the second SIW are connected in series via an opening that communicates between the first layer and the second layer; a part of the SIW of the terminator extends below an SIW of an additional terminator, the additional terminator being separate from the terminator and including an SIW extending within the substrate; Terminator.

11. a SIW that is a waveguide extending within the substrate; a microstrip line connected to the SIW; A termination comprising: The SIW has a constant width, the substrate is a multilayer substrate, The SIW is a first SIW extending through a first layer of the substrate; a second SIW extending through a second layer of the substrate; Including, the first SIW and the second SIW are connected in series via an opening that communicates between the first layer and the second layer; a part of the SIW of the terminator extends below an SIW of an additional terminator, the additional terminator being separate from the terminator and including an SIW extending within the substrate; Terminator.

12. A communication device, a transmitter / receiver unit, a controller unit, and an antenna device; The antenna device includes: one or more feed antennas provided on a major surface of the substrate; a parasitic antenna provided on the main surface of the substrate; a terminator provided on the substrate and connected to the parasitic antenna; Equipped with the terminator includes a SIW that is a waveguide extending within the substrate; the substrate is a multilayer substrate, The SIW is a first SIW extending through a first layer of the substrate; a second SIW extending through a second layer of the substrate; Including, the first SIW and the second SIW are connected in series via an opening that communicates between the first layer and the second layer; the antenna device includes an additional terminator separate from the terminator and including a SIW extending within the substrate; a portion of the SIW of the terminator extends below the SIW of the additional terminator; Terminal device.

13. A radar device, a transmitter, a receiver, a controller, and an antenna device; The antenna device includes: one or more feed antennas provided on a major surface of the substrate; a parasitic antenna provided on the main surface of the substrate; a terminator provided on the substrate and connected to the parasitic antenna; Equipped with the terminator includes a SIW that is a waveguide extending within the substrate; the substrate is a multilayer substrate, The SIW is a first SIW extending through a first layer of the substrate; a second SIW extending through a second layer of the substrate; Including, the first SIW and the second SIW are connected in series via an opening that communicates between the first layer and the second layer; the antenna device includes an additional terminator separate from the terminator and including a SIW extending within the substrate; a portion of the SIW of the terminator extends below the SIW of the additional terminator; Terminal device.

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