Magnetron sputtering device and sputtering method

Abstract

To provide a magnetron sputtering apparatus SM capable of quickly controlling a receipt of a damage to an organic layer in a case of depositing a transparent conductive oxide layer on a surface of an organic layer.SOLUTION: A cathode unit includes at least a pair of cylindrical targets Tg1-Tg6, a first drive part Db for rotating and driving the cylindrical targets around a Y-axis, and magnetic units Mu1-Mu6 that have central magnets 51a, 51b and peripheral magnets 52a, 52b and are mounted each in cylindrical targets. Among magnet units mounted to each of a pair of cylindrical targets, a polarity of the center magnet of one magnet unit in a substrate Sw side is made different from the polarity of the center magnet of the other magnet unit, and the polarity of the peripheral magnet in the substrate side is made different according to the polarity of each center magnet. The cathode unit includes a second drive part Mo that simultaneously rotates and drives each of the magnet unit in a direction opposite each other such that each magnet unit moves back and forth around a Y-axis from a standard posture in a predetermined angle range and each of the center magnet repeatedly moves close and away in an X-direction.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a magnetron sputtering apparatus having a cathode unit disposed opposite an object to be film-formed in a vacuum chamber, and a sputtering method using the apparatus, and more particularly to an apparatus suitable for forming a transparent conductive oxide film as a cathode electrode on the surface of an organic layer in the manufacturing process of a so-called top-emission organic EL device. [Background technology]

[0002] Top-emission organic EL display devices extract light generated in the organic layer through a cathode electrode layered on top of the organic layer, requiring the cathode electrode to be light-transmitting. Attempts have been made to use transparent conductive oxide films, including indium oxide-based oxide films such as ITO and IZO, as the cathode electrode. Vacuum deposition systems have traditionally been used to deposit such transparent conductive oxide films. However, while high transparency and conductivity are essential, it is also important to deposit films without damaging the organic layer, and high productivity is also required. For these reasons, magnetron sputtering systems using cylindrical targets are being considered.

[0003] A magnetron sputtering apparatus of the above type is known, for example, from Patent Document 1. This apparatus has a vacuum chamber equipped with a substrate transport means for transporting a film-forming target (e.g., a glass substrate with an organic layer formed on one side) in one direction. The direction of movement of the film-forming target is the X-axis direction, the direction perpendicular to the X-axis within the film-forming target (i.e., the organic layer surface) is the Y-axis direction, and the direction perpendicular to the X-axis and Y-axis is the Z-axis direction. A rotary cathode unit is also disposed in the vacuum chamber facing the film-forming target in the Z-axis direction, below the film-forming target, which moves at a predetermined speed in the X-axis direction. The cathode unit includes two cylindrical targets elongated in the Y-axis direction and arranged side by side at a predetermined interval in the X-axis direction. A drive means is provided for rotating each cylindrical target around the Y-axis, and a magnet unit is assembled inside each cylindrical target. Each of the pair of magnet units includes a central magnet elongated in the Y-axis direction and peripheral magnets surrounding the central magnet, forming a tunnel-shaped magnetic field in the space between the cylindrical target and the film-forming target. Usually, the central magnets of the magnet units are configured so that the polarities of the magnets on the film-forming object side match each other.

[0004] Here, as in the conventional example described above, when a film is formed by sputtering a cylindrical target, if the film-forming target is moved, particles inside the vacuum chamber may fly up and adhere to the film-forming target during or after film formation. If such particles are incorporated into the thin film, there is a risk that the desired device performance will not be achieved (leading to the occurrence of so-called dark spots and deterioration of the light-emitting performance and lifespan of the organic film). Therefore, it is desirable to form the film while the cylindrical target and the film-forming target are stationary and facing each other. In this case, it is necessary not only to minimize damage to the organic layer but also to form the film with good film thickness uniformity within the substrate surface. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2019-218604 Summary of the Invention [Problem to be solved by the invention]

[0006] In view of the above, an object of the present invention is to provide a magnetron sputtering apparatus and a sputtering method that can form a transparent conductive oxide film on the surface of an organic layer with good in-plane uniformity in film thickness while minimizing damage to the organic layer as much as possible. [Means for solving the problem]

[0007] In order to solve the above problems, the magnetron sputtering apparatus of the present invention is provided with a cathode unit disposed in a vacuum chamber facing a film-forming target, and has X-axis and Y-axis directions that are orthogonal to each other in the same plane facing the film-forming target, and the cathode unit includes at least a pair of cylindrical targets elongated in the Y-axis direction that are arranged side by side at an interval in the X-axis direction, a first drive unit that rotates and drives each of the cylindrical targets around the Y-axis, and magnet units each having a central magnet elongated in the Y-axis direction and peripheral magnets surrounding the periphery of this central magnet and assembled inside the cylindrical targets. The magnet unit is characterized in that it comprises a unit, and of the magnet units respectively assembled to the pair of cylindrical targets, the polarity of the central magnet of one magnet unit facing the film-forming target is made different from the polarity of the central magnet of the other magnet unit facing the film-forming target, and the polarity of each peripheral magnet facing the film-forming target is made different depending on each central magnet, and it further comprises a second drive unit which rotates each magnet unit synchronously in opposite directions to each other within a predetermined angular range from the reference position, back and forth around the Y axis and so that each central magnet repeatedly approaches and moves away from each other in the X axis direction.

[0008] Furthermore, in order to solve the above-mentioned problems, a sputtering method of the present invention defines mutually orthogonal directions in the same plane as X-axis and Y-axis directions, and a direction orthogonal to the X-axis and Y-axis directions as Z-axis direction, and includes at least a pair of cylindrical targets elongated in the Y-axis direction that are arranged side by side at an interval in the X-axis direction as cathode units, a first drive unit that rotationally drives each of the cylindrical targets around the Y-axis, and magnet units that have a central magnet elongated in the Y-axis direction and peripheral magnets surrounding the central magnet and are assembled inside the cylindrical targets, and the central magnet of one magnet unit and the central magnet of the other magnet unit that are assembled to the pair of cylindrical targets respectively have polarities opposite to each other in one direction of the Z-axis direction, and each central magnet The method is characterized by including a step of using peripheral magnets with one polarity in the Z-axis direction of each magnet different depending on the magnet position, arranging the object to be filmed and each cylindrical target of the cathode unit facing each other in the Z-axis direction in a vacuum chamber, introducing sputtering gas into the vacuum chamber in a vacuum atmosphere, sputtering while rotating the cylindrical targets around the Y-axis at a predetermined speed, and forming a film by causing the sputtered particles scattered from each cylindrical target according to a predetermined cosine law to adhere and deposit on the surface of the object to be filmed, and during film formation, taking the position in which each central magnet faces the object to be filmed (downward in the Z-axis direction) as the reference position, and rotating each magnet unit back and forth around the Y-axis within a predetermined angle range from the reference position and in opposite directions so that each central magnet repeatedly approaches and moves away from each other in the X-axis direction.

[0009] Here, when at least a pair of cylindrical targets are placed in a vacuum chamber and a film is formed on a target placed stationary opposite the cylindrical targets, if the magnet units are fixed in position (e.g., at a reference position), the film thickness distribution on the target surface becomes uneven, i.e., thick and thin film areas alternate at regular intervals. On the other hand, if each magnet unit is rotated back and forth around the Y axis within a predetermined angle range from the reference position during film formation, the in-plane film thickness uniformity can be improved. In this case, when the polarities of the central magnets facing the target are aligned as in the above-mentioned conventional example, for example, if the central magnets are rotated in opposite directions so as to repeatedly approach and move away from each other in the X axis direction, it has been found that the number of electrons (including secondary electrons) emitted from the magnet units toward the target increases locally, especially when the central magnets rotate in the X axis direction away from each other. On the other hand, when each magnet unit is rotated synchronously in the same direction around the Y axis within a predetermined angle range from the reference position, it was found that, particularly as the rotation angle of each magnet unit from the reference position increases, the number of electrons emitted from each magnet unit toward the film formation target due to the magnetic field leaking from each magnet unit also increases locally. If a pair of cylindrical targets is sputtered under such conditions, not only will the electrons damage the substrate, but the discharge will also become unstable.

[0010] In contrast, in the present invention, regardless of the angle at which each magnet unit in a pair of cylindrical targets is positioned, a local increase in electrons emitted due to the magnetic field leaking from each magnet unit toward the film-forming target is suppressed, and furthermore, discharge can be constantly stabilized. As a result, a transparent conductive oxide film can be formed with good in-plane uniformity in film thickness without impairing the function of minimizing damage to the organic layer when forming the organic layer on the surface of the transparent conductive oxide film. Note that, even in the present invention, if the magnet units of each cylindrical target are rotated synchronously in the same direction around the Y axis within a predetermined angle range from the reference position, the number of electrons emitted due to the magnetic field leaking from each magnet unit toward the film-forming target will increase locally.

[0011] In the present invention, in order to deposit a film with good in-plane uniformity of the film thickness, the angle range is preferably within the range of ±10 degrees to ±30 degrees. If this range is exceeded, the in-plane uniformity of the film thickness may be impaired. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 is a plan view of a vacuum processing apparatus including a magnetron sputtering apparatus according to an embodiment of the present invention. [Figure 2] 1 is a cross-sectional view schematically showing a magnetron sputtering apparatus according to an embodiment of the present invention; [Figure 3] FIG. [Figure 4] FIG. 10 is a schematic diagram showing the simulation results of magnetic fields leaking from each magnet unit in the conventional example. [Figure 5] 5A and 5B are schematic diagrams showing simulation results of magnetic fields leaking from each magnet unit of the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0013] Hereinafter, with reference to the drawings, an embodiment of a magnetron sputtering apparatus will be described using an example in which a cylindrical target made of IZO is used, and an organic EL film is formed to a predetermined thickness on one side of a TFT substrate in a cluster tool-type vacuum processing apparatus that sequentially layers a metal electrode film, an organic EL film, a transparent electrode film, and a sealing film in a vacuum atmosphere (hereinafter, this will be simply referred to as the "substrate Sw"), and an IZO film is formed on the surface of the substrate Sw (i.e., the organic layer Ol) by reactive sputtering with oxygen gas introduced. In the following, directions such as up and down are based on the installation position of the sputtering apparatus shown in FIG. 2. In this embodiment, a deposition method using the so-called deposition-down method will be described as an example, but the present invention is not limited to this, and the present invention can also be applied to, for example, the so-called deposition-up method and side deposition method.

[0014] Referring to FIG. 1, Cm denotes a cluster tool-type vacuum processing apparatus. The vacuum processing apparatus Cm includes a transfer chamber Tc having a polygonal shape in plan view and equipped with a vacuum transfer robot Tr. Surrounding the transfer chamber Tc, which can form a vacuum atmosphere, are a load lock chamber Lc, which is connected to an exhaust pipe from a vacuum pump and a vent gas line for introducing vent gas, allowing switching between atmospheric and vacuum atmospheres. Although not specifically shown or described, the load lock chamber Lc includes a first deposition chamber Pc1 for depositing a metal electrode film, a second deposition chamber Pc2 for depositing an organic EL film, and a third deposition chamber Pc3 for depositing a sealing film. Although not specifically shown or described, the first to third deposition chambers Pc1 to Pc3 are equipped with devices necessary for depositing each film, such as a vacuum pump, a sputtering cathode, and a deposition source. Since known methods for depositing the metal electrode film, the organic EL film, and the sealing film can be used, further detailed description is omitted. Alternatively, a substrate processed up to the organic EL film stage in a separate device may be used. The magnetron sputtering apparatus SM of this embodiment is provided in the vacuum processing apparatus Cm to form an IZO film as a transparent electrode film on the substrate Sw after the organic EL film has been formed to a predetermined thickness. Furthermore, the term "organic EL film" refers to a film necessary for organic EL, and does not necessarily have to be an organic film. In addition to organic films, this also includes forming thin films of magnesium, silver, lithium, ytterbium, halogen compounds, and the like.

[0015] Referring to FIG. 2, the magnetron sputtering apparatus SM of this embodiment includes a vacuum chamber 1 attached to the periphery of a transfer chamber Tc. A vacuum pump 12 is connected to the vacuum chamber 1 via an exhaust pipe 11, allowing evacuation to a predetermined pressure (vacuum level). One end of a gas inlet pipe 13 is also connected to the vacuum chamber 1. The gas inlet pipe 13 is connected to a gas source (not shown) via a flow control valve 14, such as a mass flow controller, allowing flow-controlled sputtering gases, argon gas (a rare gas) and oxygen gas (a reactive gas), to be introduced into the vacuum chamber 1, specifically, into the space between the substrate Sw and cylindrical targets Tg1 to Tg6 (described later). A substrate stage 2 is disposed below the vacuum chamber 1 via an insulating member 21. A vacuum transfer robot Tr can transfer the substrate Sw to or receive the substrate Sw from the substrate stage 2. Although not specifically shown or described, the substrate stage 2 may be provided with a heating / cooling mechanism for the substrate Sw or a mechanism for electrostatically attracting the substrate Sw. A rotary cathode unit Sc is disposed in the upper space within the vacuum chamber 1 at a distance (for example, in the range of 150 mm to 400 mm) in the Z-axis direction opposite the substrate Sw placed on the substrate stage 2. In the following, the directions perpendicular to each other on the upper surface of the substrate Sw are defined as the X-axis and Y-axis directions, and the vertical direction perpendicular to the X-axis and Y-axis directions is defined as the Z-axis direction.

[0016] Referring also to FIG. 3, the cathode unit Sc includes six cylindrical targets Tg1 to Tg6 arranged parallel to each other at equal intervals in the X-axis direction in an XY plane parallel to the substrate Sw. Each of the cylindrical targets Tg1 to Tg6 is sized to have a length in the Y-axis direction equal to or greater than the width of the substrate Sw. The number of cylindrical targets arranged in a row is appropriately determined based on, for example, the outer diameter of each of the cylindrical targets Tg1 to Tg6, the spacing between each of the cylindrical targets Tg1 to Tg6 in the X-axis direction taking into account the film thickness distribution, and the area of ​​the region in which the cylindrical targets Tg1 to Tg6 are arranged (an area at least one size larger than the substrate Sw). Each of the cylindrical targets Tg1 to Tg6 has the same shape and is composed of a cylindrical backing tube 31 and a cylindrical IZO target material 32 bonded to the backing tube 31 via a bonding material (not shown) such as indium or tin. In this embodiment, two adjacent cylindrical targets Tg1 and Tg2, Tg3 and Tg4, and Tg5 and Tg6 are paired together. In the following, the two cylindrical targets Tg1 and Tg2 located on the left side of FIG. 2 will be described as an example.

[0017] A support block (not shown) equipped with a bearing is connected to one end of each of the targets Tg1, Tg2 (Tg3-Tg6), and a drive block Db serving as a first drive unit equipped with a drive motor that rotates each of the cylindrical targets Tg1, Tg2 (Tg3-Tg6) around the Y axis at a predetermined rotational speed is connected to the other end of each of the targets Tg1, Tg2 (Tg3-Tg6). Although not specifically shown or described, the drive block Db is connected to a coolant circulation device that circulates a coolant for cooling each of the cylindrical targets Tg1, Tg2 (Tg3-Tg6) when sputtering while rotating the cylindrical targets Tg1, Tg2 (Tg3-Tg6), and an output cable from a sputtering power supply that supplies a predetermined power to each of the cylindrical targets Tg1, Tg2 (Tg3-Tg6). However, since known components can be used for these components and the support block, further description will be omitted. As a sputtering power supply, an AC power supply Ps can be used that supplies AC power to each of the pair of cylindrical targets Tg1, Tg2 (Tg3 to Tg6) (see FIG. 3). Known pulsed DC power may also be supplied to each of the cylindrical targets Tg1, Tg2 (Tg3 to Tg6).

[0018] Magnet units Mu1, Mu2 (Mu3 to Mu6) are respectively assembled within the backing tube 31 of each cylindrical target Tg1, Tg2 (Tg3 to Tg6) and supported by a tube body 33 inserted therein. Each of the magnet units Mu1, Mu2 (Mu3 to Mu6) has a yoke 41 that extends over substantially the entire length of the cylindrical target Tg1, Tg2 (Tg3 to Tg6). The yoke 41 is composed of a plate-like member made of a magnetic material and has a flat lower surface 41a and two inclined surfaces 41b that slope upward from the lower surface 41a. Central magnets 51a, 51b are respectively arranged on the lower surface 41a of the yoke 41, and peripheral magnets 52a, 52b are respectively arranged on both inclined surfaces 41b. Although not specifically shown or described, corner magnets that form part of each peripheral magnet 52a, 52b are arranged at both ends of the lower surface 41a of the yoke 41 in the Y-axis direction, surrounding the ends of each central magnet 51a, 51b and bridging the gap between each peripheral magnet 52a, 52b.

[0019] In this embodiment, the central magnet 51a of one magnet unit Mu1 (Mu3, Mu5) and the central magnet 51b of the other magnet unit Mu2 (Mu4, Mu6) have different polarities on the substrate Sw side, and the peripheral magnets 52a, 52b have different polarities on the substrate Sw side depending on the central magnets 51a, 51b. The central magnets 51a, 51b, the peripheral magnets 52a, 52b, and the corner magnets are made of neodymium magnets with the same magnetization, and may be, for example, integrally molded rods with a substantially rectangular cross section. This creates a balanced, closed-loop magnetic field (not shown) that penetrates and leaks through each cylindrical target Tg1, Tg2 (Tg3-Tg6) in the space between each cylindrical target Tg1, Tg2 (Tg3-Tg6) and the substrate Sw. A rotary shaft 41c also protrudes from the yoke 41 and can be rotated around the Y-axis by a motor Mo provided in the drive block Db as a second drive unit. In this embodiment, the orientation in which each central magnet 51a, 51b faces downward in the Z-axis direction (the orientation shown in FIG. 3) is used as the reference orientation, and the magnet units Mu1, Mu2 (Mu3 to Mu6) can be rotated back and forth around the Y-axis within a predetermined angular range (e.g., ±30 degrees) from the reference orientation. In this case, the central magnets 51a, 51b are rotated synchronously in opposite directions so that they repeatedly approach and move away from each other in the X-axis direction (in other words, so that the distance Ds between the central magnets 51a, 51b repeatedly increases and decreases). In this embodiment, the shortest distance Ds is set to a range of 40 mm to 260 mm, and the rotation speed of the magnet units Mu1, Mu2 (Mu3 to Mu6) is appropriately set depending on the required film thickness distribution of the IZO film, etc. The angle range when rotating the magnet units Mu1 and Mu2 (Mu3 to Mu6) back and forth is also set appropriately depending on the required film thickness distribution of the IZO film, and it was confirmed that the desired in-plane uniformity of the film thickness can be obtained if the angle is within the range of ±10 degrees to ±30 degrees.

[0020] When an IZO film is formed using the sputtering apparatus SM, after the substrate Sw is placed on the substrate stage 2, argon gas and oxygen gas are introduced, the flow rates of which are adjusted by the flow rate adjustment valve 14, once the pressure inside the vacuum chamber 1 reaches a predetermined level. Additionally, while each of the cylindrical targets Tg1-Tg6 is rotated in one direction around the Y axis at a predetermined speed and each of the magnet units Mu1, Mu2 (Mu3-Mu6) is rotated as described above, AC power is applied to each of the cylindrical targets Tg1-Tg6 by the sputtering power supply Ps at a predetermined frequency (for example, in the range of 10-50 kHz). This generates plasma in the space between each of the cylindrical targets Tg1-Tg6 and the substrate Sw inside the vacuum chamber 1. As a result, each of the cylindrical targets Tg1 to Tg6 is sputtered by the rare gas ions in the plasma, and the sputtered particles scattered from each of the cylindrical targets Tg1 to Tg6 according to a predetermined cosine law react with the oxygen gas as appropriate, and adhere to and deposit on the surface of the stationary opposing substrate Sw, forming an IZO film.

[0021] 4, in which the same components and elements are designated by the same reference numerals, a pair of adjacent cylindrical targets Tg1, Tg2 (Tg3 to Tg6) are arranged with the same polarity on the substrate Sw side of central magnets 510a, 510b as in the conventional example, and the polarity on the substrate Sw side of each peripheral magnet 520a, 520b is different depending on each central magnet 510a, 510b (hereinafter, these will be referred to as "magnet units Mu10, Mu20"). For example, when the central magnets 510a, 510b are rotated in opposite directions within an angle range of ±30 degrees so as to repeatedly approach and move away from each other in the X-axis direction, the behavior of electrons near the targets Tg1, Tg2 (Tg3 to Tg6) was analyzed based on a simulation of the magnetic field leaking from each magnet unit Mu10, Mu20 and the electric field applied to the targets Tg1, Tg2 (Tg3 to Tg6). As shown by the thin lines in Figure 4(a), we found that when each of the central magnets 510a and 510b rotates to the end of its separation direction (right side in Figure 4(a)), the number of electrons emitted due to the magnetic field leaking from the space between the magnet units Mu10 and Mu20 toward the substrate Sw increases locally. On the other hand, even when the central magnets 510a and 510b are rotated synchronously in the same direction around the Y axis within an angular range of ±30 degrees from the reference position so that the spacing between them is constant, as shown by the thin lines in Figure 4(b), we found that the number of electrons emitted due to the magnetic field leaking from each magnet unit Mu10 and Mu20 toward the substrate Sw increases locally, especially as the rotation angle from the reference position of each magnet unit increases. When a pair of cylindrical targets Tg1 and Tg2 (Tg3 to Tg6) is sputtered under these conditions, not only is the substrate Sw damaged by electrons (including secondary electrons), but the discharge also becomes unstable.

[0022] In contrast, in this embodiment, as shown by the thin lines in FIG. 5( a), it was confirmed that there was no local increase in electrons emitted toward the substrate Sw due to the leaking magnetic field, either when each of the central magnets 51a and 51b was rotated to the end in the approaching direction (left side in FIG. 5( a)) or when each of the central magnets 51a and 51b was rotated to the end in the separating direction (right side in FIG. 5( a)). In this embodiment, as shown in FIG. 5( b), when the central magnets 51a and 51b were rotated synchronously in the same direction around the Y axis within an angular range of ±30 degrees from the reference position so that the spacing between them was constant, the local increase in electrons emitted toward the substrate Sw due to the magnetic field leaking from each magnet unit Mu1, Mu2 (Mu3 to Mu6) toward the substrate Sw increased as the rotation angle from the reference position increased. It was also confirmed that the discharge became unstable when the angular range exceeded ±30 degrees.

[0023] According to the above embodiment, even if the magnet units Mu1, Mu2 (Mu3 to Mu6) are rotated within the cylindrical targets Tg1, Tg2 (Tg3 to Tg6) during film formation, the increase in local electrons emitted toward the substrate Sw due to the magnetic field leaking from the magnet units Mu1, Mu2 (Mu3 to Mu6) toward the substrate Sw is suppressed, and furthermore, the discharge can be constantly stabilized. As a result, when an IZO film is formed on the surface of the organic layer, damage to the organic layer can be minimized, and furthermore, a film can be formed on the surface of the substrate Sw with good in-plane uniformity in film thickness.

[0024] Although the embodiments of the present invention have been described above, various modifications are possible without departing from the scope of the technical concept of the present invention. In the above embodiments, the cylindrical targets Tg1 to Tg6 are made of IZO, but the present invention is not limited to this, and can be widely applied to cases where a transparent conductive oxide film including an indium oxide-based oxide film such as ITO is formed by magnetron sputtering using a cathode unit Sc having a pair of cylindrical targets Tg1 to Tg6. [Explanation of symbols]

[0025] SM...magnetron sputtering device, Db...drive block (first drive unit), Mo...motor (second drive unit), Mu1 to Mu6...magnet units, Sc...cathode unit, Sw...substrate (object to be film-formed), Tg1 to Tg6...cylindrical targets, 1...vacuum chamber, 51a, 51b...central magnet, 52a, 52b...peripheral magnets.

Claims

1. A magnetron sputtering apparatus comprising a cathode unit disposed in a vacuum chamber facing a film-forming target at an interval ranging from 150 mm to 400 mm, The X-axis direction and the Y-axis direction are directions that are orthogonal to each other in the same plane facing the film-forming target, and the cathode unit comprises at least a pair of cylindrical targets that are elongated in the Y-axis direction and arranged side by side with a gap in the X-axis direction, a first drive unit that rotates the cylindrical targets around the Y-axis, and a magnet unit that has a central magnet that is elongated in the Y-axis direction and peripheral magnets that surround the central magnet and is assembled inside the cylindrical target, the film-forming target having an organic layer formed on its film-forming surface, and the pair of cylindrical targets and the film-forming target being stationary and facing each other, the polarities of the central magnet of one magnet unit and the central magnet of the other magnet unit, which are respectively assembled to the pair of cylindrical targets, facing the film-forming target are made different from each other, and the polarities of the peripheral magnets facing the film-forming target are made different according to the central magnets; a second driving unit that rotates each magnet unit back and forth around the Y axis in synchronous directions opposite to each other within an angle range of ±10 degrees to ±30 degrees from the reference position, the reference position being a position in which each central magnet faces the film formation target; a magnetron sputtering device configured such that, during film formation on the surface of the organic layer, when one magnet unit is rotationally driven in one direction and the other magnet unit in the other direction to the ends of the above-mentioned angle range by the second drive unit, the central magnets are spaced apart with the distance between them in the X-axis direction at their longest, and when one magnet unit is rotationally driven in the other direction and the other magnet unit in one direction to the ends of the above-mentioned angle range, the central magnets are close together with the distance between them in the X-axis direction at their shortest, the distance being in the range of 40 mm to 260 mm.

2. The X-axis direction and the Y-axis direction are orthogonal directions in the same plane, and the Z-axis direction is orthogonal to the X-axis direction and the Y-axis direction, and the cathode unit comprises at least a pair of cylindrical targets elongated in the Y-axis direction and arranged side by side at an interval in the X-axis direction, a first drive unit that rotates the cylindrical targets around the Y-axis, and magnet units each having a central magnet elongated in the Y-axis direction and peripheral magnets surrounding the central magnet, and each assembled inside the cylindrical target, and the central magnet of one magnet unit and the central magnet of the other magnet unit of the magnet units assembled to the pair of cylindrical targets respectively have polarities in one direction in the Z-axis direction that are different from each other, and the peripheral magnets have polarities in one direction in the Z-axis direction that are different depending on the central magnet, A sputtering method comprising: a film formation target having an organic layer formed on a film formation surface; arranging the film formation target and each cylindrical target of a cathode unit opposite each other in a vacuum chamber in the Z-axis direction at an interval ranging from 150 mm to 400 mm; introducing a sputtering gas into the vacuum chamber in a vacuum atmosphere while the pair of cylindrical targets and the film formation target are stationary; performing sputtering while rotating the cylindrical targets at a predetermined speed around the Y-axis; and adhering and depositing sputtered particles scattered from each cylindrical target according to a predetermined cosine law onto the surface of the film formation target to form a film; a sputtering method comprising the steps of: defining a position in which each central magnet faces an object to be film-formed as a reference position; rotating each magnet unit back and forth around the Y axis and in opposite directions synchronously within an angular range of ±10 degrees to ±30 degrees from the reference position; and during film formation on the surface of an organic layer, rotating one magnet unit in one direction and the other magnet unit in the other direction to the ends of the above-mentioned angular ranges, so that the central magnets are spaced apart with the distance between them in the X-axis direction at their longest; and rotating one magnet unit in the other direction and the other magnet unit in one direction to the ends of the above-mentioned angular ranges, so that the central magnets are close together with the distance between them in the X-axis direction at their shortest, and the shortest distance between the central magnets is in the range of 40 mm to 260 mm.

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