Light-emitting device, electronic device and lighting device

Abstract

To provide a novel light-emitting device with high luminous efficiency, reduced power consumption, and reduced viewing angle dependence of chromaticity.SOLUTION: A light-emitting device includes at least one light-emitting element, and one optical element. The light emitted from the light-emitting element through the optical element has a first maximum value in a wavelength range of 400 nm or more and less than 480 nm in the spectrum in a range of more than 0° and 70° or less of a normal vector of the light-emitting element and a second maximum value located on a longer wavelength side than the first maximum value, and an intensity ratio of the second maximum value to the first maximum value is 15% or less.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention is a light-emitting layer that emits light when an electric field is applied between a pair of electrodes. The present invention relates to a light-emitting element comprising the above-mentioned compound, or a light-emitting device, an electronic device, and a lighting device each having the light-emitting element. do.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect of the present invention relates to an article, a method, or a manufacturing method. One aspect of the invention is a process, machine, manufacture, or composition of matter. Therefore, the present invention disclosed in this specification more specifically relates to the In one embodiment, the present invention relates to a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, and the like. As examples, a device, a power storage device, a storage device, a driving method thereof, or a manufacturing method thereof These can be listed as follows. [Background technology]

[0003] In recent years, electroluminescence (EL) The basic structure of these light-emitting devices is as follows: A layer containing a light-emitting substance (EL layer) is sandwiched between a pair of electrodes. By applying a voltage, light can be emitted from the luminescent material.

[0004] Since the above-mentioned light-emitting element is a self-luminous type, a light-emitting device using this element has excellent visibility and It has the advantage of not requiring a light source and consuming little power. It also has the advantage of high response speed.

[0005] In order to improve the light extraction efficiency from the light-emitting element, the optical resonance effect is utilized between a pair of electrodes. The device employs a micro-optical resonator (microcavity) structure that increases the light intensity at specific wavelengths. A method for adding the above has been proposed (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-182127 Summary of the Invention [Problem to be solved by the invention]

[0007] A micro-optical resonator structure (hereafter referred to as a microcavity) that utilizes the optical resonance effect between a pair of electrodes. When this structure is adopted for a light-emitting element, the direction parallel to the normal vector of the light-emitting element is However, the resonance effect makes it possible to extract the desired light. At a position deviated from the normal vector, i.e., at a position away from the normal vector of the light emitting element, In a light emitting device having such a light emitting element, the wavelength of the light may be different from the desired wavelength. In some cases, the chromaticity may become dependent on the viewing angle.

[0008] In view of the above-described problems, one object of one embodiment of the present invention is to provide a novel light-emitting device. Alternatively, the luminous efficiency is high, power consumption is reduced, and the viewing angle dependency of chromaticity is reduced. It is an object of the present invention to provide a novel light-emitting device. One of the objectives is to provide a method.

[0009] The above description of the problem does not preclude the existence of other problems. The embodiment does not necessarily have to solve all of these problems. Problems other than those mentioned above can be solved by the specification. It is clear from the description of the specification, etc. that the problems other than those mentioned above cannot be extracted from the description of the specification, etc. It is possible to issue it. [Means for solving the problem]

[0010] One aspect of the present invention is a light emitting device having at least one light emitting element and one optical element. The light emitted from the light emitting element through the optical element is reflected by a normal vector of the light emitting element. In the spectrum from 0° to 70°, the wavelength range is 400 nm to 480 nm. The first maximum is located in the wavelength range of 1000 nm, and the second maximum is located on the longer wavelength side of the first maximum. and the intensity ratio of the second maximum value to the first maximum value is 15% or less. More details are as follows:

[0011] One embodiment of the present invention is a light-emitting element including a first light-emitting element, a second light-emitting element, a third light-emitting element, and a first light-emitting element. a first light-emitting element, a second light-emitting element, and a third light-emitting element; The light emitted through the optical element has a spectrum of 600 nm to 740 nm. Light having a first maximum value in a wavelength range and emitted from a second light-emitting element via a second optical element. has a second maximum value in the wavelength range of 480 nm or more and less than 550 nm in the spectrum, The light emitted from the third light emitting element through the third optical element is directed in the normal vector of the third light emitting element. In the spectrum from 0° to 70°, the wavelength range is 400 nm to 480 nm. The third maximum is located in the wavelength range of 1000 nm, and the fourth maximum is located on the longer wavelength side than the third maximum. and the intensity ratio of the fourth maximum to the third maximum is 15% or less. It is a light-emitting device that has the following characteristics.

[0012] In the above configuration, the first optical element is configured to emit light having a wavelength of 570 nm or more and 800 nm or less. The second optical element has a region where the light transmittance is 50% or more, and the second optical element has a region where the light transmittance is 480 nm or more and 570 nm or more. The third optical element has a region in which the transmittance of light having a wavelength of less than 400 n is 50% or more. The transmittance of light having a wavelength of 530 nm or more and less than 480 nm is 50% or more. It is preferable that the transmittance of light having a wavelength of 680 nm or more is 20% or less. .

[0013] In each of the above configurations, the first light emitting element includes a first lower electrode and a light emitting element on the first lower electrode. a first transparent conductive film, a first light-emitting layer on the first transparent conductive film, and a second light-emitting layer on the first light-emitting layer. a second light-emitting element having a light-emitting layer and an upper electrode on the second light-emitting layer, and a second lower electrode and a second transparent conductive film on the second lower electrode; a first light-emitting layer on the second transparent conductive film; a second light-emitting layer on the light-emitting layer of the first light-emitting element, and an upper electrode on the second light-emitting layer; a third lower electrode; a third transparent conductive film on the third lower electrode; and a third transparent conductive film on the third transparent conductive film. a first light-emitting layer, a second light-emitting layer on the first light-emitting layer, and an upper electrode on the second light-emitting layer. It is preferable to do so.

[0014] In the above-mentioned configuration, a charge generating layer may be further provided between the first light-emitting layer and the second light-emitting layer. It is preferred that the .alpha.- ...beta.

[0015] In each of the above configurations, the first light emitting element includes a first lower electrode and a light emitting element on the first lower electrode. a first transparent conductive film, a first light-emitting layer on the first transparent conductive film, and a second light-emitting layer on the first light-emitting layer. a light-emitting layer, a third light-emitting layer on the second light-emitting layer, and an upper electrode on the third light-emitting layer; The second light emitting element includes a second lower electrode, a second transparent conductive film on the second lower electrode, and a second transparent A first light-emitting layer on the transparent conductive film, a second light-emitting layer on the first light-emitting layer, and a third light-emitting layer on the second light-emitting layer. and an upper electrode on the third light-emitting layer, and the third light-emitting element has a third lower electrode a third transparent conductive film on the third lower electrode; a first light-emitting layer on the third transparent conductive film; a second light-emitting layer on the first light-emitting layer, a third light-emitting layer on the second light-emitting layer, and a third light-emitting layer on the third light-emitting layer; It is preferable that the electrode has a first electrode.

[0016] In the above-mentioned configuration, a charge generating layer may be further provided between the first light-emitting layer and the second light-emitting layer. and the second light-emitting layer and the third light-emitting layer are preferably in contact with each other.

[0017] In each of the above configurations, the emission spectrum from the first light-emitting layer is in the blue wavelength region. the emission spectrum from the second light-emitting layer has a peak in the yellow wavelength region; In each of the above structures, the emission spectrum from the first light-emitting layer is preferably blue. The emission spectrum from the second light-emitting layer has a peak in the green wavelength region. The emission spectrum from the third light-emitting layer preferably has a peak in the red wavelength region. I wish.

[0018] In each of the above configurations, the first lower electrode, the second lower electrode, and the third lower electrode are , each of which has a function of reflecting visible light, and the upper electrode has a function of reflecting visible light and a function of In each of the above structures, the first lower electrode Preferably, the first, second and third bottom electrodes each comprise silver.

[0019] In each of the above configurations, the thickness of the third transparent conductive film is In each of the above configurations, the third lower electrode and the first light-emitting The distance between the first lower electrode and the first light-emitting layer is determined by the distance between the second lower electrode and the first light-emitting layer. It is preferable that the distance to the optical layer is the longest.

[0020] In each of the above configurations, the optical distance between the first lower electrode and the third light-emitting layer is 3λ. R / 4(λ R represents the wavelength of red light), and The optical distance is 3λ G / 4(λ G represents the green wavelength), and the third bottom electrode and the The optical distance between the light-emitting layer of 1 is 3λ B / 4(λ B is preferably in the vicinity of the wavelength of blue light. It's nice.

[0021] Another embodiment of the present invention is a light-emitting element including a first light-emitting element, a second light-emitting element, and a third light-emitting element. a fourth light-emitting element, a first optical element, a second optical element, a third optical element, and a fourth and an optical element, and the light emitted from the first light-emitting element through the first optical element is The spectrum has a first maximum value in the wavelength range of 600 nm to 740 nm, and a second maximum value The light emitted from the light emitting element through the second optical element has a spectrum of 480 nm or more. a third light-emitting element having a second maximum value in a wavelength range of from 550 nm to 550 nm; The light emitted through the third light-emitting element is in the range of more than 0° and less than 70° of the normal vector of the third light-emitting element. In the spectrum, there is a third maximum in the wavelength range of 400 nm or more and less than 480 nm, and a fourth maximum value located on the longer wavelength side than the maximum value, and a fourth light emitting element emits a fourth light. The light emitted through the optical element has a wavelength of 550 nm or more and less than 600 nm in the spectrum. The fifth maximum is present in the long range, and the intensity ratio of the fourth maximum to the third maximum is 15% or less. The light emitting device is characterized in that:

[0022] Another embodiment of the present invention is a light-emitting element including a first light-emitting element, a second light-emitting element, and a third light-emitting element. a fourth light-emitting element, a first optical element, a second optical element, and a third optical element. However, the light emitted from the first light-emitting element through the first optical element has a spectrum of 6. a first maximum value in a wavelength range of 00 nm to 740 nm, and a second The light emitted through the optical element has a spectrum between 480 nm and 550 nm. Light having a second maximum value in a wavelength range and emitted from a third light-emitting element via a third optical element. is a spectrum in the range of more than 0° and less than 70° of the normal vector of the third light-emitting element. The third maximum occurs in the wavelength range of 400 nm or more and less than 480 nm, and the third maximum occurs in the wavelength range of 400 nm or more and less than 480 nm. and a fourth maximum value located on the side of the fourth light-emitting element, and the light emitted from the fourth light-emitting element is The light is emitted without passing through the first or second optical element, and has a spectrum of 550 nm or more and 60 nm or less. The fifth maximum is in the wavelength range of less than 0 nm, and the intensity ratio of the fourth maximum to the third maximum is is a light-emitting device characterized in that the difference is 15% or less.

[0023] In each of the above configurations, the first optical element is configured to emit light having a wavelength of 570 nm or more and 800 nm or less. The second optical element has a region where the transmittance of light from 480 nm to 570 nm is 50% or more. The third optical element has a region in which the transmittance of light having a wavelength of less than 400 nm is 50% or more. The transmittance of light having a wavelength of 53 nm or more and less than 480 nm is 50% or more, and It is preferable that the optical transmittance of the optical film has a region in which the transmittance of light having a wavelength of 0 nm or more and 680 nm or less is 20% or less. stomach.

[0024] In each of the above configurations, the first light emitting element includes a first lower electrode and a light emitting element on the first lower electrode. a first transparent conductive film, a first light-emitting layer on the first transparent conductive film, and a second light-emitting layer on the first light-emitting layer. a second light-emitting element having a light-emitting layer and an upper electrode on the second light-emitting layer, and a second lower electrode and a second transparent conductive film on the second lower electrode; a first light-emitting layer on the second transparent conductive film; a second light-emitting layer on the light-emitting layer of the first light-emitting element, and an upper electrode on the second light-emitting layer; a third lower electrode; a third transparent conductive film on the third lower electrode; and a third transparent conductive film on the third transparent conductive film. a first light-emitting layer, a second light-emitting layer on the first light-emitting layer, and an upper electrode on the second light-emitting layer. The fourth light-emitting element includes a fourth lower electrode, a fourth transparent conductive film on the fourth lower electrode, and a fourth a first light-emitting layer on the transparent conductive film; a second light-emitting layer on the first light-emitting layer; and a second light-emitting layer on the second light-emitting layer. and an upper electrode.

[0025] In the above-mentioned configuration, a charge generating layer may be further provided between the first light-emitting layer and the second light-emitting layer. It is preferable that the

[0026] In each of the above configurations, the first light emitting element includes a first lower electrode and a light emitting element on the first lower electrode. a first transparent conductive film, a first light-emitting layer on the first transparent conductive film, and a second light-emitting layer on the first light-emitting layer. a light-emitting layer, a third light-emitting layer on the second light-emitting layer, and an upper electrode on the third light-emitting layer; The second light emitting element includes a second lower electrode, a second transparent conductive film on the second lower electrode, and a second transparent A first light-emitting layer on the transparent conductive film, a second light-emitting layer on the first light-emitting layer, and a third light-emitting layer on the second light-emitting layer. and an upper electrode on the third light-emitting layer, and the third light-emitting element has a third lower electrode a third transparent conductive film on the third lower electrode; a first light-emitting layer on the third transparent conductive film; a second light-emitting layer on the first light-emitting layer, a third light-emitting layer on the second light-emitting layer, and a third light-emitting layer on the third light-emitting layer; a fourth light emitting element having a fourth lower electrode and a fourth transparent electrode on the fourth lower electrode; a transparent conductive film, a first light-emitting layer on the fourth transparent conductive film, and a second light-emitting layer on the first light-emitting layer; It is preferable to have a third light-emitting layer on the second light-emitting layer and an upper electrode on the third light-emitting layer.

[0027] In the above-mentioned configuration, a charge generating layer may be further provided between the first light-emitting layer and the second light-emitting layer. and the second light-emitting layer and the third light-emitting layer are preferably in contact with each other.

[0028] In each of the above configurations, the emission spectrum from the first light-emitting layer is in the blue wavelength region. the emission spectrum from the second light-emitting layer has a peak in the yellow wavelength region; In each of the above structures, the emission spectrum from the first light-emitting layer is preferably blue. The emission spectrum from the second light-emitting layer has a peak in the green wavelength region. The emission spectrum from the third light-emitting layer preferably has a peak in the red wavelength region. I wish.

[0029] In each of the above configurations, the first lower electrode, the second lower electrode, the third lower electrode, and The fourth lower electrode has a function of reflecting visible light, and the upper electrode has a function of reflecting visible light. It is preferable that the optical element has a function of transmitting visible light and a function of transmitting visible light. , the first lower electrode, the second lower electrode, the third lower electrode, and the fourth lower electrode are respectively , preferably containing silver.

[0030] In each of the above configurations, the film thickness of the third transparent conductive film is equal to or less than that of the first to fourth transparent conductive films. In each of the above structures, the third lower electrode and the first light-emitting layer are preferably the thickest. The distance between the first lower electrode and the first light-emitting layer is the distance between the second lower electrode and the first light-emitting layer. and the distance between the fourth lower electrode and the first light-emitting layer, it is preferable that the distance be the longest among them.

[0031] In each of the above configurations, the optical distance between the first lower electrode and the third light-emitting layer is 3λ. R / 4(λ R represents the wavelength of red light), and The optical distance is 3λ G / 4(λ G represents the green wavelength), and the third bottom electrode and the The optical distance between the light-emitting layer of 1 is 3λ B / 4(λ B represents the blue wavelength), The optical distance between the lower electrode and the second light-emitting layer is 3λ. Y / 4(λ Y represents the yellow wavelength) It is preferable that they are in the vicinity.

[0032] Another embodiment of the present invention is a light-emitting device having any of the above structures, a housing and / or a touch sensor. or an electronic device having the light emitting device having the above-described configuration and a housing and / or a touch sensor The term "light emitting device" as used herein also includes a lighting device having the above. , image display device, or light source (including lighting device). Also, a light-emitting device with a connector - For example, FPC (Flexible Printed Circuit) or TC Module with P (Tape Carrier Package) attached, TCP A module with a printed wiring board at the end of the light emitting element, or a COG (Chip On Glass) The module in which IC (integrated circuit) is directly mounted using the n Glass method is a light emitting device may have. [Effects of the Invention]

[0033] According to one embodiment of the present invention, a novel light-emitting device can be provided. According to the embodiment, the luminous efficiency is high, the power consumption is reduced, and the viewing angle dependency of the chromaticity is reduced. According to one embodiment of the present invention, a novel light-emitting device can be provided. A method for fabricating the device can be provided.

[0034] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other effects from the descriptions in the aspects and claims. [Brief explanation of the drawings]

[0035] [Figure 1] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 2] Schematic cross-sectional view illustrating the viewing angle dependence of emission spectrum and chromaticity. [Figure 3] 1 is a graph showing electroluminescence spectra measured at angles of 0°, 10°, 30°, 50°, and 70° with respect to the normal vector of the light-emitting element. [Figure 4] FIG. 4 is a diagram illustrating the transmittance of a colored layer. [Figure 5] 1 is a graph showing electroluminescence spectra measured at angles of 0°, 10°, 30°, 50°, and 70° with respect to the normal vector of the light-emitting element through a colored layer. [Figure 6] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 7] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 8] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 9] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 10] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 11] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 12] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 13] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 14] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 15] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 16] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 17] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 18] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 19] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 20] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 21] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 22] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 23] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 24] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 25]FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 26] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 27] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 28] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 29] 1A and 1B are schematic cross-sectional views illustrating a light-emitting element according to one embodiment of the present invention. [Figure 30] 1A and 1B are diagrams illustrating the correlation of energy levels in a light-emitting layer. [Figure 31] 1A and 1B are diagrams illustrating the correlation of energy levels in a light-emitting layer. [Figure 32] 1A and 1B are a top view and a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 33] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 34] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 35] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 36] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 37] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 38] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 39] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 40] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 41] 1A and 1B are a block diagram and a circuit diagram illustrating a display device of one embodiment of the present invention. [Figure 42] FIG. 2 is a perspective view illustrating a display module. [Figure 43] 1A and 1B are diagrams illustrating electronic devices. [Figure 44] 1A and 1B are diagrams illustrating a lighting device. [Figure 45] FIG. 1 is a perspective view showing an example of a touch panel. [Figure 46]FIG. 1 is a cross-sectional view showing an example of a touch panel. [Figure 47] FIG. 1 is a cross-sectional view showing an example of a touch panel. [Figure 48] 1A and 1B are a block diagram and a timing chart of a touch sensor; [Figure 49] Circuit diagram of a touch sensor. [Figure 50] 1 is a cross-sectional view illustrating a light-emitting element according to an embodiment. [Figure 51] 10A and 10B are graphs illustrating luminance-current density characteristics and luminance-voltage characteristics of a light-emitting element according to an example. [Figure 52] FIG. 10 is a graph showing power efficiency vs. luminance characteristics of a light-emitting element according to an embodiment. [Figure 53] FIG. 10 is a graph showing current efficiency vs. luminance characteristics of a light-emitting element according to an example. [Figure 54] 10A and 10B are graphs illustrating electroluminescence spectra of light-emitting elements according to Examples. [Figure 55] 4A and 4B are diagrams illustrating a chromaticity difference Δu′v′ of a light-emitting element according to an embodiment. [Figure 56] FIG. 10 is a graph showing electroluminescence spectra measured at angles of 0°, 10°, 30°, 50°, and 70° with respect to the normal vector of the light-emitting element according to the example. [Figure 57] FIG. 10 is a graph showing electroluminescence spectra measured at angles of 0°, 10°, 30°, 50°, and 70° with respect to the normal vector of the light-emitting element according to the example. DETAILED DESCRIPTION OF THE INVENTION

[0036] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the above description, and the embodiments and details thereof may be modified without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited to the embodiments described below. It is not to be construed as being limited to the content.

[0037] In addition, the position, size, range, etc. of each component shown in the drawings etc. are not necessarily shown in order to facilitate understanding. It may not represent the actual position, size, range, etc. Therefore, the disclosed invention The position, size, range, etc. are not necessarily limited to those disclosed in the drawings, etc.

[0038] In addition, in this specification and the like, ordinal numbers such as 1st, 2nd, etc. are used for convenience. Therefore, for example, "first" may be written as "second" and "third" may be written as "third". The terms "second" and "third" can be used interchangeably to explain the present invention. The ordinal numbers listed may not match the ordinal numbers used to identify an aspect of the present invention. There may be cases where this is the case.

[0039] In addition, in this specification and the like, when explaining the configuration of the invention using drawings, the same The reference numerals are used commonly even among different drawings.

[0040] In this specification, the blue wavelength region refers to wavelengths of 400 nm or more and less than 480 nm. blue light emission is light having at least one emission spectrum peak in this wavelength region. The green wavelength range is the wavelength range of 480 nm or more and less than 550 nm. The color of light emitted has at least one emission spectrum peak in the wavelength range. The wavelength range is 550 nm or more and less than 600 nm, and yellow light is emitted in this wavelength range. The red wavelength region has at least one emission spectrum peak. The wavelength range is 600 nm or more and 740 nm or less, and red light is light that is at least in this wavelength range. It also has one emission spectrum peak.

[0041] In this specification, the normal vector of a light emitting element is a pair of electrodes that the light emitting element has. In this case, the direction is perpendicular to the surface on which the upper electrode is formed, which is the side from which light is extracted.

[0042] In this specification and the like, a transparent conductive film is a film that has a function of transmitting visible light and is conductive. For example, a transparent conductive film is ITO (Indium Tin O oxide conductor films, oxide semiconductor films, or organic conductive films containing organic materials The organic conductive film containing organic material includes, for example, a film containing an organic compound and an electron donor (donor). a film containing a composite material formed by mixing an organic compound and an electron acceptor; The resistivity of the transparent conductive film may be, for example, Preferably 1 x 10 5 Ω·cm or less, more preferably 1×10 4 Ω·cm or less.

[0043] In addition, in this specification and the like, the terms "film" and "layer" are interchangeable. For example, the term "conductive layer" can be changed to the term "conductive film." Alternatively, for example, the term "insulating film" may be changed to "insulating layer" It may be possible to change the term to

[0044] (Embodiment 1) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described below with reference to FIGS. 1 to 30. explain.

[0045] <Configuration example 1 of light-emitting device> FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. , the light emitting element 101R, the light emitting element 101G, the light emitting element 101B, and the optical element 124R. , optical element 124G, and optical element 124B. The light-emitting elements 101R, 101G, and 101B are provided above the substrate 102, Each optical element (optical element 124R, optical element 124G, and optical element 124B) is formed on the substrate 1. It is located below 22.

[0046] The light emitting element 101R has a lower electrode 104R and a transparent conductive film 1 on the lower electrode 104R. 06R, a light-emitting layer 108 on the transparent conductive film 106R, and a light-emitting layer 110 on the light-emitting layer 108, The light emitting element 101G has an upper electrode 120 on the light emitting layer 110. 04G, a transparent conductive film 106G on the lower electrode 104G, and a light-emitting layer on the transparent conductive film 106G. 108, a light-emitting layer 110 on the light-emitting layer 108, and an upper electrode 120 on the light-emitting layer 110. The light emitting element 101B has a lower electrode 104B and a transparent conductive layer on the lower electrode 104B. a film 106B, a light-emitting layer 108 on the transparent conductive film 106B, and a light-emitting layer 110 on the light-emitting layer 108; and an upper electrode 120 on the light-emitting layer 110.

[0047] In the light emitting device 150, the transparent conductive films (transparent conductive film 106R, transparent conductive film 1 Between the light-emitting layer 108 and the transparent conductive film 106G and the light-emitting layer 108, a hole injection layer 131 and a hole and an electron transport layer 132. In addition, an electron transport layer 132 is provided between the light emitting layer 108 and the light emitting layer 110. 33, an electron injection layer 134, a charge generation layer 116, a hole injection layer 135, and a hole transport layer 1 36. In addition, an electron transport layer 137 is provided between the light emitting layer 110 and the upper electrode 120. and an electron injection layer 138.

[0048] In the following description, a pair of electrodes (for example, the lower electrode 104R and the upper electrode 120 The above layers disposed between the first and second electrodes 101 and 102 may be collectively referred to as the EL layer 100.

[0049] In FIG. 1, the hole injection layer 131, the hole transport layer 132, the light emitting layer 108, the electron transport layer 133, electron injection layer 134, charge generation layer 116, hole injection layer 135, and hole transport layer 136 The light-emitting layer 110, the electron transport layer 137, the electron injection layer 138, and the upper electrode 120 are Although the example is shown in a state where each element is separated, it is possible to use the same element in common without separating them for each light emitting element. It is possible.

[0050] In addition, in FIG. 1, the lower electrode 104R, the lower electrode 104G, and the lower electrode 104B are , and each have a function of reflecting visible light. The electrode has a function of reflecting visible light and a function of transmitting visible light. For the reflectance, materials containing aluminum or silver are used to increase the reflectance. This allows the light emitting elements (light emitting element 101R, light emitting element 101G, and light emitting element 101 R) can increase the luminous efficiency.

[0051] Furthermore, the light 181 emitted from the light emitting element 101R via the optical element 124R is red. The light emitted from the light emitting element 101G through the optical element 124G has a wavelength range. The light 182 emitted by the light emitting element 10 has a wavelength range that results in green light. The light 183 emitted from the optical element 124B through the optical element 124B is in a wavelength range that becomes blue light. It has a region.

[0052] In other words, the optical elements 124R, 124G, and 124B receive the incident light. It has the function of selectively transmitting light of a specific color from the light that enters it.

[0053] For example, the optical element 124R has a transmittance of light having a wavelength of 570 nm or more and 800 nm or less. The optical element 124G has a region where the ratio is 50% or more. The optical element 124B has a region where the transmittance of light with a wavelength of less than 50% is 50% or more. has a region in which the transmittance of light having a wavelength of 400 nm or more and less than 480 nm is 50% or more, And it has a region where the transmittance of light with a wavelength of 530 nm or more and 680 nm or less is 20% or less. do.

[0054] In FIG. 1, red (R) light is emitted from each light-emitting element through each optical element. The light that exhibits green (G), and the light that exhibits blue (B) are represented by dashed arrows. This is also true for the light emitting device described later. The light emitting device 150 shown in FIG. 1 has a structure in which light emitted by each light emitting element is directed in a direction opposite to the substrate 102 on which the light emitting element is formed. It is a top-emission type (also called a top-emission type) structure, where the light is extracted from the opposite side. One aspect of the present invention is not limited to this, and the light emitted by each light emitting element may be transmitted to the substrate 1 on which the light emitting element is formed. Bottom emission type (also called bottom emission type) where the light is emitted from the bottom of the OLED. The light emitted from the substrate 102 on which the light emitting element is formed is extracted from both the upper and lower sides of the substrate 102. It may be a dual emission type.

[0055] Furthermore, the light 181 emitted through the optical element 124R has a spectrum of 600n. The first maximum value is in the wavelength range of 1000 nm or more and 740 nm or less. The light 182 emitted by the laser beam is in the wavelength range of 480 nm or more and less than 550 nm in the spectrum. The light 183 emitted through the optical element 124B has a second maximum value. A third maximum value is present in the wavelength range of 400 nm or more and less than 480 nm in the and a fourth maximum value located on the longer wavelength side than the first maximum value.

[0056] For example, the light-emitting layer 108 may contain at least one of purple, blue, and blue-green. The first luminescent material exhibiting one of the following luminescence colors is used to form the luminescent layer 110: green, yellow-green, yellow, a second luminescent material that emits at least one light selected from orange and red; By using the above-mentioned material, each light-emitting element exhibiting an emission spectrum having the above-mentioned maximum value is formed. For example, a first light-emitting material that emits blue light can be used for the light-emitting layer 108. It is preferable to use a second light-emitting material that emits yellow light in the light-emitting layer 110.

[0057] In this way, light-emitting device 150 has a light-emitting spectrum that is the same as that of light-emitting layer 108 and that of light-emitting layer 110. By adjusting the light spectrum, it is possible to obtain light emission close to monochromatic light. By adjusting the emission spectrum of the light emitting layer 108 and the emission spectrum of the light emitting layer 110, white light can be obtained. It is also possible to obtain colored light emission.

[0058] Furthermore, the light emitting device 150 includes a light emitting element 101R, a light emitting element 101G, and a light emitting element 101G. 1B each have a microcavity structure.

[0059] <Microcavity structure> The microcavity structure is described below.

[0060] The light emitted from the light-emitting layer 108 and the light-emitting layer 110 is guided by a pair of electrodes (for example, a lower electrode 104R and the upper electrode 120). The film thicknesses of the transparent conductive film 106R, the transparent conductive film 106G, and the transparent conductive film 106B are adjusted by This can increase the intensity of light emitted from the light-emitting layer 108 and the light-emitting layer 110. In each light-emitting element, at least one of the hole injection layer 131 and the hole transport layer 132 By making the thicknesses of the light emitting layers 108 and 110 different, the intensity of the light emitted from the light emitting layer 108 and the light emitting layer 110 can be adjusted. It may be strengthened.

[0061] For example, the lower electrodes (lower electrode 104R, lower electrode 104G, and lower electrode 104B) When the refractive index of the upper electrode 120 is smaller than the refractive index of the light-emitting layer 108 or the light-emitting layer 110, In this case, the thickness of the transparent conductive film 106R is set to a value that is insufficient to prevent light from passing through the lower electrode 104R and the upper electrode 120. The distance between the schools is m R λ R / 2(m R is a natural number, and λ R is the wavelength of the light to be intensified by the light emitting element 101R, The thickness of the transparent conductive film 106G is adjusted to be equal to or larger than the thickness of the lower electrode 106G. The optical distance between the electrode 04G and the upper electrode 120 is m G λ G / 2(m G is a natural number, and λ G is luminous The wavelength of the light to be intensified by the element 101G is adjusted to be (representing the wavelengths of the light). The thickness of the conductive film 106B is set such that the optical distance between the lower electrode 104B and the upper electrode 120 is m B λ B / 2(m B is a natural number, and λ B represent the wavelength of the light to be intensified by the light emitting element 101B), and Adjust so that it becomes.

[0062] In addition, by adjusting the film thickness of the transparent conductive film 106R, the lower electrode 104R and the light-emitting layer 110 The optical distance between R The transparent conductive film 106G can be approximately 1 / 4. By adjusting the thickness, the optical distance between the lower electrode 104G and the light-emitting layer 110 can be adjusted to 3λ. G / 4 In addition, by adjusting the film thickness of the transparent conductive film 106B, the lower electrode The optical distance between 104B and the light-emitting layer 108 is 3λ. B It can be around / 4.

[0063] In other words, the thickness of the transparent conductive film 106B is 1 / 2 times that of the transparent conductive film 106R. This can be the thickest configuration among the transparent conductive films 106G.

[0064] Furthermore, by setting the optical distance as described above, in the light emitting device 150, the lower electrode 104R and the upper electrode The optical distance between the electrode 120 and the R / 2 (i.e., λ R ), the bottom electrode 104G and the top The optical distance between the electrode 120 is 2λ. G / 2 (i.e., λ G ), the lower electrode 104B and the upper electrode The optical distance between the poles is 3λ. B / 2 (i.e. 1.5λ B )

[0065] Moreover, by setting the optical distance as described above, the distance between the lower electrode 104B and the light-emitting layer 108 is The distance between the electrode 104R and the light-emitting layer 108, and the distance between the lower electrode 104G and the light-emitting layer 108, The longest configuration can be achieved.

[0066] The optical distance between the lower electrode 104B and the light-emitting layer 108 is λ B In the case of the vicinity of / 4, the bottom Light scattering or light absorption near the surface of electrode 104B reduces the light extraction efficiency. This is because one of the pair of electrodes is made of a highly reflective metal film (for example, a metal film containing silver). When used, surface plasmon resonance (SPR) The effect of reflection scattering or absorption of light occurs near the surface of a highly reflective metal film. This is because the light extraction efficiency decreases.

[0067] However, in the light emitting device 150, as described above, the lower electrode 104B and the light emitting layer 1 The optical distance between the lens and the lens is 3λ. B / 4, the light is scattered near the lower electrode 104B. Alternatively, light absorption can be suppressed, and high light extraction efficiency can be achieved. From element 101B, blue light can be extracted efficiently from light-emitting layer .

[0068] The lower electrodes (lower electrode 104R, lower electrode 104G, and lower electrode 104B) The optical distance between the upper electrode 120 and the lower electrode is, strictly speaking, the distance from the reflective area of ​​the lower electrode to the upper electrode The refractive index is expressed as the product of the distance to the reflective area at 120 and the refractive index. It is difficult to precisely determine the reflective area of ​​the lower electrode 120. The above-mentioned effect can be obtained by determining an arbitrary position of the upper electrode 120 as the reflective region. do.

[0069] That is, in this specification, λ z The neighborhood (z represents R, G, B) is λ z whereas , -20 nm or more and +20 nm or less.

[0070] Similarly, the optical distance between the lower electrode and each light-emitting layer (light-emitting layer 108 or light-emitting layer 110) is , more precisely, the distance from the reflective area of ​​the lower electrode to the light-emitting area of ​​each light-emitting layer and the refraction However, the reflective area in the lower electrode and the luminous area in each luminous layer are Since it is difficult to determine the reflective area precisely, an arbitrary position of the reflective electrode is set as the reflective area, and each emitting The above-mentioned effect can be obtained by determining an arbitrary position of the layer as the light emitting region.

[0071] In this way, in the light emitting device 150 shown in FIG. 1, the lower electrode and the upper electrode of each light emitting element are By adjusting the optical distance between the electrodes, light scattering or absorption near the bottom electrode is suppressed. As a result, high light extraction efficiency can be achieved.

[0072] However, in the light emitting element 101B, the thickness of the transparent conductive film 106B can be adjusted. The optical distance between the lower electrode 104B and the light-emitting layer 108 is set to 3λ. B By setting it to / 4 neighborhood , the optical distance between the lower electrode 104B and the upper electrode 120 is 3λ B This is in the vicinity of / 2. At this time, the lower electrode 104R and the upper electrode 120 of another light-emitting element, for example, the light-emitting element 101R, The optical distance between R / 2 neighborhood, and λ R is λ B If the The optical distance between the lower electrode 104B and the upper electrode 120 in the optical element 101B and the The optical distance between the lower electrode 104R and the upper electrode 120 in the element 101R is approximately the same. In this case, both the light emitting element 101B and the light emitting element 101R have the light emitting layer 108 and the light emitting layer 109. 10, the light emitting element 101B has λ B Emission of nearby wavelengths and λ R Emission of nearby wavelengths Therefore, λ is emitted from the light emitting element 101B. B The third maximum in the vicinity λ B and a fourth maximum at a longer wavelength, λ B Longer wavelengths If the intensity of the fourth maximum located on the side is large, a decrease in color purity occurs.

[0073] In the light-emitting device 150 according to one embodiment of the present invention, the light-emitting element is irradiated through the optical element 124B. Since light emitted from the element 101B is emitted, the light emitted from the element 101B is reflected by the optical element 124B. B in the wavelength range of The light transmittance is λ R High color purity is achieved by making the transmittance of light in the wavelength range higher than that of the It is possible to obtain

[0074] In addition, the light emitted from the light emitting element has different emission spectra and colors depending on whether it is emitted from the front or oblique direction. This is because the resonant wavelength in the microcavity structure changes depending on whether it is in the front direction or the oblique direction. This is because the viewing angle dependence occurs in the emission spectrum and chromaticity. The cause of this will be explained using Figure 2.

[0075] <Viewing angle dependence of emission spectrum and chromaticity> 2, the light emitting element 101B will be described as an example. When a cavity structure is provided, the wave vector that resonates in the front direction of the light-emitting surface is defined as k1. At this time, the wave vector k2 that resonates in the oblique direction is expressed by the following formula (1): It is possible.

[0076]

number

[0077] In the formula (1), θ2 is the angle of the light emitting element in the propagation direction of light inside the light emitting element. represents the angle from the normal vector of the light-emitting surface.

[0078] In addition, when light propagates between media with different refractive indices, the following equation (2) is given by Snell's law: holds true.

[0079]

number

[0080] In the formula (2), θ1 is the normal to the light emitting surface of the light emitting element in the light emitted to the outside. is the angle from the line vector, n0 is the refractive index of the medium outside the light-emitting element, and n B is the lower electrode 104 The refractive index of the medium between B and the upper electrode 120 (the EL layer and the transparent conductive film 106B) is represent.

[0081] In addition, the wave vector k1 that resonates in the front direction of the light-emitting surface is expressed as follows using the wavelength of the light-emitting element: This can be expressed by the following equation (3).

[0082]

number

[0083] In equation (3), λ B represents the wavelength of light that resonates in the front direction of the light-emitting surface.

[0084] From the formulas (1) to (3), the resonant wavelength in the oblique direction is expressed by the following formula (4): It is possible.

[0085]

number

[0086] From the formula (4), the angle of the light emitting surface (θ1> 0°) is larger than the angle of the light emitting surface (θ1=0°). 0°), the resonance wavelength becomes smaller, and the larger θ1 becomes, the smaller the resonance wavelength becomes.

[0087] In this way, the emission spectrum and color change depending on whether the light is emitted from an oblique or frontal direction. Even if the desired emission spectrum and color are obtained in the viewing direction, the chromaticity may vary depending on the viewing angle. Presence may occur.

[0088] Here, the viewing angle dependency of the emission spectrum of the light emitting element or the viewing angle dependency of the chromaticity will be described. This will be explained with reference to FIGS. 3 to 5 and Tables 1 and 2.

[0089] FIG. 3 shows a light emitting device corresponding to the light emitting device 101B shown in FIG. 1, which was fabricated by The electroluminescence spectra were measured at 0°, 10°, 30°, 50°, and 70° with respect to the vector. This is a determined diagram.

[0090] The structures and abbreviations of the compounds used in the light-emitting devices whose electroluminescence spectra were measured are shown in FIG. The structure of the light-emitting element will be described below.

[0091] [ka]

[0092] [ka]

[0093] <Configuration of light-emitting element whose emission spectrum was measured> The lower electrode 104B is a film of an alloy of silver, palladium and copper (abbreviated as APC film) with a thickness of 1000 nm. The transparent conductive film 106B was formed to a thickness of 100 nm. An indium tin oxide (abbreviated as ITSO) film was formed to a thickness of 60 nm.

[0094] The hole injection layer 131 may be formed of 3-[4-(9-phenanthryl)-phenyl]- 9-phenyl-9H-carbazole (abbreviation: PCPPn) and molybdenum oxide (MoO3) The weight ratio (PCPPn:MoO3) was set to 2:1 and the thickness was set to 70 nm. Co-evaporation is the process of simultaneously depositing multiple different substances from different evaporation sources. The hole transport layer 132 is made of PCPPn with a thickness of 10 nm. The vapor deposition was carried out so that the thickness became m.

[0095] The light-emitting layer 108 is made of 7-[4-(10-phenyl-9-anthryl)phenyl] [c,g]carbazole (abbreviation: cgDBCzPA), and N, N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoro)-

[00110] (1,6mMemFLP) APrn) at a weight ratio (cgDBCzPA:1,6mMemFLPAPrn) of 1:0.0 The luminescent layer 108 was co-deposited to a thickness of 25 nm. cgDBCzPA is the host material and 1,6mMemFLPAPrn is the fluorescent material ( guest material).

[0096] By using the above-mentioned materials for the light-emitting layer 108, light emission from the fluorescent material can be obtained efficiently. This will be explained in detail in the second embodiment.

[0097] Further, on the light-emitting layer 108, an electron transport layer 133 containing cgDBCzPA and bathophenanthroline was formed. Thorolin (abbreviation: Bphen) was evaporated to a thickness of 5 nm and 15 nm, respectively. Next, as the electron injection layer 134, lithium oxide (Li2O) and copper phthalocyanine (abbreviated :CuPc) were deposited to thicknesses of 0.1 nm and 2 nm, respectively. The charge generation layer 116, which also serves as the injection layer 135, is made of 1,3,5-tri(dibenzothiophene) -4-yl)benzene (abbreviation: DBT3P-II) and MoO3 in a weight ratio of (DBT3P- The layers were co-evaporated so that the ratio of II to MoO3 was 2:1 and the film thickness was 12.5 nm. Next, as the hole transport layer 136, 4-phenyl-4'-(9-phenylfluorene-9- (I)yltriphenylamine (abbreviation: BPAFLP) was evaporated to a thickness of 20 nm. Ta.

[0098] The light-emitting layer 110 is made of 2-[3'-(dibenzothiophen-4-yl)biphenyl] nyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II ), N-(1,1'-biphenyl-4-yl)-9,9-dimethyl-N-[4-(9-phenyl) (phenyl-9H-carbazol-3-yl)phenyl]-9H-fluoren-2-amine ( PCBBiF), and (acetylacetonato)bis[5-methyl-6-(2-methyl- Bis(2-phenyl)-4-phenylpyrimidinato]iridium(III) [5-methyl-6-(2-methylphenyl)-4-pyrimidinyl-κN3]phenyl-κ C}(2,4-pentanedionato-κ 2 O,O')iridium(III) (abbreviation: Ir (mpmppm)2(acac)) by weight ratio (2mDBTBPDBq-II:PCBBi F:Ir(mpmppm)2(acac)) should be 0.8:0.2:0.06, and The light-emitting layer 110 was co-deposited to a thickness of 40 nm. PDBq-II is the first organic compound (host material), and PCBBiF is the second organic compound. Ir(mpmppm)2(acac) is a phosphorescent material (guest materials).

[0099] By using the above-mentioned materials for the light-emitting layer 110, light emission from the phosphorescent material can be obtained efficiently. This makes it possible to further reduce the driving voltage. This will be explained in State 2.

[0100] The electron transport layer 137 is formed by mixing 2mDBTBPDBq-II and Bphen, The electron injection layer 138 was formed by sequentially depositing the following: Lithium fluoride (LiF) was evaporated to a thickness of 1 nm.

[0101] The upper electrode 120 is made of an alloy of silver (Ag) and magnesium (Mg) in a volume ratio of ( Ag:Mg) was co-evaporated to a thickness of 15 nm with a ratio of 0.5:0.05, and then IT The O film was formed to a thickness of 70 nm.

[0102] The above is the configuration of the light-emitting device shown in Figure 3, for which the electroluminescence spectrum was measured. Details are shown in Table 1.

[0103] [Table 1]

[0104] As shown in FIG. 3, the electroluminescence spectrum of the light-emitting element 101B has a third maximum value In addition, there is a fourth maximum located on the longer wavelength side than the third maximum. This is the optical distance at which the light intensity can be increased even in the vicinity of a wavelength 1.5 times the maximum value of 3. This is because, compared to the fourth maximum value in the front direction (0°), The fourth maximum at angles (30°, 50°, and 70°) is shifted to shorter wavelengths. As already explained, the resonant wavelength in the microcavity structure becomes smaller in the oblique direction. This is because.

[0105] Therefore, in order to reduce the intensity of the fourth maximum value in the oblique direction, the optical element 124B Consider a configuration in which a colored layer (so-called color filter) is provided at the position of the substrate 1. The results of measuring the transmittance of the colored layer on 22 are shown in FIG. , and a colored layer having the transmittance shown in FIG. 4. The electroluminescence spectrum shown in FIG. 5 was obtained by irradiating the light through the colored layer. The angles are 0°, 10°, 30°, 50°, and The results are those measured at 70°. Also, the third maximum wave of the electroluminescence spectrum shown in Figure 5 The wavelengths of the first and fourth maximum values ​​are shown in Table 2.

[0106] [Table 2]

[0107] As shown in Figures 3, 5 and Table 2, by providing a colored layer having the transmittance shown in Figure 4, Compared to the light emitted from the light emitting element, the light emitted from the light emitting element through the colored layer The intensity of the fourth maximum in the front direction (0°) is significantly reduced. The fourth maxima at 10°, 30°, 50°, and 70°, especially the fourth maxima at 50° and 70° The intensity of the fourth maximum is not sufficiently reduced. In order to extend the optical transmission, it is necessary to use optical elements that do not have sufficient performance (for example, colored optical elements with transmittance characteristics shown in FIG. 4). In cases where the fourth maximum is present, it may be difficult to sufficiently reduce the intensity of the fourth maximum. be.

[0108] As shown in Figure 5 and Table 2, the intensity ratio of the fourth maximum to the third maximum changes significantly. Then (specifically, when the intensity ratio of the fourth maximum to the third maximum exceeds 15%) As shown in Table 2, the normal vector of the light-emitting element At 0°, 10°, and 30° from the center, the third maximum is located on the longer wavelength side. There may be multiple fourth maxima. The fourth maxima are located on the longer wavelength side than the third maxima. In the case of multiple maximum values, the strength of the fourth maximum value relative to the third maximum value is If the ratio exceeds 15%, the chromaticity becomes dependent on the viewing angle.

[0109] However, in the light emitting device 150 according to one embodiment of the present invention, the optical element 124B is an optical One of its characteristics is that the transmittance of light with wavelengths between 530nm and 680nm is 20% or less. By having the area, the light 183 emitted through the optical element 124B is The fourth pole for the third maximum value in the range of 0° to 70° of the normal vector of 4B Therefore, the viewing angle dependency of chromaticity is low. More preferably, the fourth maximum value relative to the third maximum value can be obtained. The intensity ratio of the third maximum can be 10% or less. The intensity ratio of the fourth maximum value to the first maximum value can be 3% or less.

[0110] As described above, in the light-emitting device of one embodiment of the present invention, the lower electrode and the upper electrode of each light-emitting element are By adjusting the optical distance between the electrodes, light scattering or absorption near the bottom electrode is suppressed. In addition, it is possible to achieve high light extraction efficiency by controlling the light-emitting elements, especially blue light. By providing an optical element that reduces the intensity of a specific wavelength to a light emitting element that emits light, the chromaticity can be reduced. A light emitting device with reduced viewing angle dependency can be realized. It is possible to provide a novel light-emitting device with reduced viewing angle dependency and reduced optical resistance.

[0111] <Configuration Example 2 of Light-Emitting Device> Next, an example of a configuration different from that of the light emitting device 150 shown in FIG. 1 will be described below with reference to FIG. 6. conduct.

[0112] FIG. 6 is a cross-sectional view illustrating an example of a light-emitting device according to one embodiment of the present invention. The parts having the same functions as those shown in Figure 1 are indicated with the same hatch pattern and the symbols are omitted. In addition, parts having similar functions are given similar reference numerals, and their detailed explanations will be omitted. may be omitted.

[0113] The light emitting device 152 shown in FIG. 6 includes the light emitting device 150 shown in FIG. 1 and each light emitting element (light emitting element 1 The light-emitting elements 101R, 101G, and 101B have different EL layer configurations. Specifically, a light emitting layer 112 is further provided between the light emitting layer 110 and the upper electrode 120 .

[0114] The light-emitting layer 112 is made of at least one of a green, a yellow-green, a yellow, an orange, and a red. The light-emitting layer 110 and the light-emitting layer 120 each have a third light-emitting material that emits any one of the two light-emitting materials. In the light-emitting device 152, the light-emitting layer 108 has a different color from that of the light-emitting layer 108. The first light-emitting material exhibiting blue light emission is used in the light-emitting layer 110, and the second light-emitting material exhibiting green light emission is used in the light-emitting layer 110. It is preferable to use a light-emitting material for the light-emitting layer 111 and a third light-emitting material for the light-emitting layer 112 that emits red light. do.

[0115] As described above, the EL layer includes three light-emitting layers (light-emitting layer 108, light-emitting layer 110, and light-emitting layer 112). However, by providing the light-emitting layer 112, the color purity of each light-emitting element can be improved. Therefore, if you want to reduce the number of EL layers, you can use the method shown in Figure 1. The configuration of the light emitting device 150 shown in FIG. It is similar to the device 150 and has the same effect.

[0116] <Configuration Example 3 of Light-Emitting Device> Next, an example of a configuration different from that of the light emitting device 150 shown in FIG. 1 will be described below with reference to FIG. conduct.

[0117] FIG. 7 is a cross-sectional view illustrating an example of a light-emitting device according to one embodiment of the present invention. The parts having the same functions as those shown in Figs. 1 and 6 are indicated by the same hatch patterns. In addition, parts with similar functions are given similar reference numerals, and their details are described below. Detailed explanations may be omitted.

[0118] The light emitting device 154 shown in FIG. 7 is the same as the light emitting device 150 shown in FIG. The other configurations are the same as those of the light-emitting device 150 shown in FIG. This has the same effect.

[0119] The partition wall 140 has insulating properties. The partition wall 140 also functions as a barrier between the lower electrode (lower electrode) of each light emitting element. the upper electrode 104R, the lower electrode 104G, and the lower electrode 104B), and the transparent conductive film (transparent conductive film 1 The transparent conductive film 106R, the transparent conductive film 106G, and the transparent conductive film 106B are covered with the lower electrode. By providing the partition wall 140, the lower electrode of each light emitting element and It is possible to separate the transparent conductive film of each light emitting element into islands.

[0120] The light-shielding layer 123 also has the function of blocking light from the adjacent light-emitting elements. The optical layer 123 may not be provided.

[0121] <Configuration Example 4 of Light-Emitting Device> Next, an example of a configuration different from that of the light emitting device 150 shown in FIG. 1 will be described below with reference to FIG. 8. conduct.

[0122] FIG. 8 is a cross-sectional view illustrating an example of a light-emitting device according to one embodiment of the present invention. The parts having the same functions as those shown in FIGS. 1 to 7 are indicated by the same hatching patterns. In addition, parts with similar functions are given similar reference numerals, and their details are described below. Detailed explanations may be omitted.

[0123] The light emitting device 156 shown in FIG. 8 includes the light emitting device 150 shown in FIG. 1 and each light emitting element (light emitting element 1 The light-emitting elements 101R, 101G, and 101B have different EL layer configurations. Specifically, each light-emitting element of the light-emitting device 156 shown in FIG. 8 includes a light-emitting layer 108, a light-emitting layer 110, and a Between them, there is an electron transport layer 133, an electron injection layer 134, a charge generation layer 116, a hole injection layer 135, 8, the light-emitting layer 108 and the hole transport layer 136 are not provided. By providing the layer 110 in contact with each other, it is possible to reduce the number of EL layers. Therefore, the manufacturing cost can be reduced. Between the light-emitting layer 108 and the light-emitting layer 110, a buffer layer (separation layer or The other configurations are the same as those of the light-emitting device shown in FIG. It is similar to device 150 and has the same effect.

[0124] <Configuration Example 5 of Light-Emitting Device> Next, an example of a configuration different from that of the light emitting device 150 shown in FIG. 1 will be described below with reference to FIG. conduct.

[0125] FIG. 9 is a cross-sectional view illustrating an example of a light-emitting device according to one embodiment of the present invention. The parts having the same functions as those shown in FIGS. 1 to 8 are indicated by the same hatching patterns. In addition, parts with similar functions are given similar reference numerals, and their details are described below. Detailed explanations may be omitted.

[0126] The light emitting device 158 shown in FIG. 9 has the optical element 124G that the light emitting device 156 shown in FIG. By adopting a configuration that does not include the optical element 124G, the light emitting element 101G The light emitted from the However, when improving color purity or suppressing external light reflection, In this case, a configuration in which an optical element 124G is provided, such as the light-emitting device 156 shown in FIG. The other configurations are similar to the light emitting device 156 shown in FIG. It has an effect.

[0127] <Configuration Example 6 of Light-Emitting Device> Next, a configuration example different from the light emitting device 150 shown in FIG. 1 will be described below with reference to FIG. Do the following.

[0128] FIG. 10 is a cross-sectional view illustrating an example of a light-emitting device according to one embodiment of the present invention. 1 to 9, the same hatch patterns are used for parts having the same functions as those shown in FIGS. In addition, parts having similar functions are given similar symbols, and A detailed description of the above may be omitted.

[0129] The light emitting device 160 shown in FIG. 10 includes the light emitting device 156 shown in FIG. 8 and each light emitting element (light emitting element The light-emitting elements 101R, 101G, and 101B have different EL layer configurations. Specifically, the light-emitting layer 112 is further provided between the light-emitting layer 110 and the electron transport layer 137. The light-emitting layer 112 is the same as the light-emitting layer 112 of the light-emitting device 152 shown above. The configuration is the same as that of the light emitting device 156 shown in FIG. 8, and the same effects are achieved.

[0130] <Configuration Example 7 of Light-Emitting Device> 1 and 6 to 10 illustrate a top-emission type light-emitting device. However, as shown in FIGS. 11 to 14, a bottom emission type light emitting device may also be used. .

[0131] FIG. 11 is a cross-sectional view of a light emitting device 150B, which is a modification of the light emitting device 150 shown in FIG. 12 is a cross-sectional view of a light emitting device 152B, which is a modification of the light emitting device 152 shown in FIG. 13 shows a light emitting device 156B, which is a modification of the light emitting device 156 shown in FIG. 14 is a cross-sectional view of the light emitting device 160 shown in FIG. FIG. 6 is a cross-sectional view of 60B.

[0132] In the case of a bottom emission type light emitting device as shown in FIGS. 11 to 14, each light emitting element The lower electrode and upper electrode of the element may be configured as follows.

[0133] For example, the lower electrode 104R, the lower electrode 104G, and the lower electrode 104B reflect visible light. The upper electrode 120 has a function of reflecting visible light and a function of transmitting visible light. It has a reflective function.

[0134] That is, the configuration of the upper electrode and the lower electrode of the top emission type light emitting device described above By replacing the above, a bottom emission type light emitting device can be obtained. Although not shown, the stacking order of the EL layers also differs between top-emission and bottom-emission types. It can also be reversed for mission type.

[0135] <Configuration Example 8 of Light-Emitting Device> Next, a configuration example different from the light emitting device 150 shown in FIG. 1 will be described below with reference to FIG. Do the following.

[0136] FIG. 15 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. The parts with the same functions as those indicated by the symbols in 1 are given the same hatch pattern and the symbols are omitted. In addition, parts having similar functions are denoted by similar reference numerals, and detailed descriptions thereof are provided in the It may be omitted.

[0137] The light emitting device 170 shown in FIG. 15 includes a light emitting element 101R, a light emitting element 101G, and a light emitting element 101B, a light emitting element 101Y, an optical element 124R, an optical element 124G, and an optical element The light emitting element 101R, the light emitting element 101B, and the optical element 124Y are The optical element 101G, the light emitting element 101B, and the light emitting element 101Y are disposed above the substrate 102. The optical elements 124R, 124G, 124B, and The optical element 124Y is provided below the substrate 122.

[0138] The light emitting element 101Y includes a lower electrode 104Y and a transparent conductive film 101Y on the lower electrode 104Y. 106Y, a light-emitting layer 108 on the transparent conductive film 106Y, and a light-emitting layer 110 on the light-emitting layer 108. and an upper electrode 120 on the light-emitting layer 110.

[0139] In the light emitting device 170, the transparent conductive films (transparent conductive film 106R, transparent conductive film 1 The transparent conductive film 106G, the transparent conductive film 106B, and the transparent conductive film 106Y are formed between the light-emitting layer 108 and the hole The light-emitting layer 108 includes a hole injection layer 131 and a hole transport layer 132. The light-emitting layer 108 includes a hole injection layer 131 and a hole transport layer 132. Between these, there are an electron transport layer 133, an electron injection layer 134, a charge generation layer 116, and a hole injection layer 137. 35 and a hole transport layer 136. In addition, between the light emitting layer 110 and the upper electrode 120 It has an electron transport layer 137 and an electron injection layer 138 .

[0140] The lower electrode 104Y also has a function of reflecting visible light. By using a material containing aluminum or silver, it is possible to increase the reflectivity. This makes it possible to increase the light emitting efficiency of the light emitting element.

[0141] Furthermore, the light 184 emitted from the light emitting element 101Y through the optical element 124Y is yellow. The wavelength range of the light is

[0142] In other words, the optical element 124Y selectively transmits light of a specific color from the incident light. It has the function of passing through.

[0143] For example, the optical element 124Y has a transmittance of 550 nm or more and less than 600 nm. 0% or more.

[0144] In FIG. 15, red (R) light is emitted from each light-emitting element through each optical element. Light exhibiting green (G), light exhibiting blue (B), and light exhibiting yellow (Y) The same applies to the light emitting device described later. In this way, the light emitting device 170 shown in FIG. 15 converts the light emitted by each light emitting element into a light emitting element. The top emission type (also called top emission type) is used to extract light from the opposite side of the substrate 102 on which the light is formed. The structure is as follows:

[0145] Furthermore, the light 184 emitted through the optical element 124Y has a spectrum of 550n. The fifth maximum value is in the wavelength range of 1000 nm or more and less than 600 nm.

[0146] Furthermore, the light emitting device 170 includes a light emitting element 101R, a light emitting element 101G, and a light emitting element 101B. , and the light emitting element 101Y each have a microcavity structure.

[0147] That is, in the light emitting device 170, the transparent conductive film 106R and the transparent conductive film The thickness of the transparent conductive film 106G, the transparent conductive film 106B, and the transparent conductive film 106Y is adjusted to The intensity of light emitted from the light-emitting layer 108 and the light-emitting layer 110 can be increased. In the optical element, the thickness of at least one of the hole injection layer 131 and the hole transport layer 132 is different. By doing so, the intensity of the light emitted from the light-emitting layer 108 and the light-emitting layer 110 may be increased.

[0148] For example, the refractive index of the lower electrode 104Y and the upper electrode 120 is When the refractive index is smaller than 0, the thickness of the transparent conductive film 106Y is set to be equal to or smaller than the thickness of the lower electrode 104. The optical distance between Y and the upper electrode 120 is m Y λ Y / 2(m Y is a natural number, and λ Y is a light-emitting element The wavelengths of the light to be intensified by 101Y are respectively indicated by the following formula.

[0149] In addition, by adjusting the film thickness of the transparent conductive film 106R, the lower electrode 104R and the light-emitting layer 110 The optical distance between R The transparent conductive film 106G can be approximately 1 / 4. By adjusting the thickness, the optical distance between the lower electrode 104G and the light-emitting layer 110 can be adjusted to 3λ. G / 4 near In addition, by adjusting the film thickness of the transparent conductive film 106B, the lower electrode 1 The optical distance between O4B and the light-emitting layer 108 is 3λ. B It can be set to about 1 / 4. By adjusting the thickness of the transparent conductive film 106Y, the light between the lower electrode 104Y and the light emitting layer 110 can be The distance between the two is 3λ. Y It can be around / 4.

[0150] In other words, the thickness of the transparent conductive film 106B is 1 / 2 times that of the transparent conductive film 106R. The transparent conductive film 106G can be configured to have the largest thickness among the bright conductive film 106G and the transparent conductive film 106Y.

[0151] Furthermore, by setting the optical distance as described above, in the light emitting device 170, the lower electrode 104R and the upper electrode The optical distance between the electrode 120 and the R / 2 (i.e., λ R ), the bottom electrode 104G and the top The optical distance between the electrode 120 is 2λ. G / 2 (i.e., λG ), the lower electrode 104B and the upper electrode The optical distance between the poles is 3λ. B / 2 (i.e. 1.5λ B ), the lower electrode 104Y and the upper The optical distance between the electrode 120 and the Y / 2 (i.e., λ Y )

[0152] Moreover, by setting the optical distance as described above, the distance between the lower electrode 104B and the light-emitting layer 108 is The distance between the electrode 104R and the light-emitting layer 108, the distance between the lower electrode 104G and the light-emitting layer 108, and The distance between the lower electrode 104Y and the light-emitting layer 108 can be the longest.

[0153] Strictly speaking, the optical distance between the lower electrode 104Y and the upper electrode 120 is The product of the distance from the reflective area in 104Y to the reflective area in the upper electrode 120 and the refractive index However, strictly speaking, the reflective areas of the lower electrode 104Y and the upper electrode 120 are expressed as follows. Therefore, it is difficult to determine the position of the lower electrode 104Y and the upper electrode 120. The above-mentioned effect can be obtained by determining the reflection area.

[0154] That is, in this specification, λ Y The neighborhood is λ Y -20nm or more +20nm m or less.

[0155] In this way, in the light emitting device 170 shown in FIG. 15, the lower electrode and the upper electrode of each light emitting element are By adjusting the optical distance between the electrodes, light scattering or absorption near the bottom electrode is suppressed. This allows for high light extraction efficiency. It is similar to the light emitting device 150 and provides the same effects.

[0156] <Configuration Example 9 of Light-Emitting Device> Next, a configuration example different from the light emitting device 170 shown in FIG. 15 will be explained below with reference to FIG. 16. Make it clear.

[0157] FIG. 16 is a cross-sectional view illustrating an example of a light-emitting device according to one embodiment of the present invention. Therefore, the parts having the same functions as those shown in FIG. 15 are indicated by the same hatch pattern. In addition, parts with similar functions are given the same reference numerals, and their details are Explanations may be omitted.

[0158] The light emitting device 172 shown in FIG. 16 is a light emitting device 170 shown in FIG. 15, and each light emitting element (light emitting element E of the light emitting element 101R, the light emitting element 101G, the light emitting element 101B, and the light emitting element 101Y The L layer has a different structure. Specifically, between the light-emitting layer 110 and the upper electrode 120, It has a light-emitting layer 112 .

[0159] The light-emitting layer 112 is made of at least one of a green, a yellow-green, a yellow, an orange, and a red. The light-emitting layer 110 and the light-emitting layer 120 each have a third light-emitting material that emits any one of the two light-emitting materials. In the light-emitting device 172, the light-emitting layer 108 has a different color from that of the light-emitting layer 108. The first light-emitting material exhibiting blue light emission is used in the light-emitting layer 110, and the second light-emitting material exhibiting green light emission is used in the light-emitting layer 110. It is preferable to use a light-emitting material for the light-emitting layer 111 and a third light-emitting material for the light-emitting layer 112 that emits red light. do.

[0160] As described above, the EL layer includes three light-emitting layers (light-emitting layer 108, light-emitting layer 110, and light-emitting layer 112). However, by providing the light-emitting layer 112, the color purity of each light-emitting element can be improved. Therefore, if you want to reduce the number of EL layers, you can use the method shown in Figure 15. The configuration of the light emitting device 170 shown in FIG. It is similar to the light emitting device 170 and provides the same effects.

[0161] <Configuration Example 10 of Light-Emitting Device> Next, a configuration example different from the light emitting device 170 shown in FIG. 15 will be explained below with reference to FIG. 17. Make it clear.

[0162] FIG. 17 is a cross-sectional view illustrating an example of a light-emitting device according to one embodiment of the present invention. 15 and 16, the same hatch patterns are used for the parts having the same functions as those shown in FIGS. In addition, parts with similar functions are assigned the same symbols. , the detailed description of which may be omitted.

[0163] The light emitting device 174 shown in FIG. 17 is the light emitting device 170 shown in FIG. , and a light-shielding layer 123. The other configurations are the same as those of the light-emitting device 170 shown in FIG. and have similar effects.

[0164] The partition wall 140 has insulating properties. The partition wall 140 also functions as a barrier between the lower electrode (lower electrode) of each light emitting element. a transparent conductive layer 104R, a lower electrode 104G, a lower electrode 104B, and a lower electrode 104Y) and Transparent conductive film (transparent conductive film 106R, transparent conductive film 106G, transparent conductive film 106B, and transparent conductive film 106Y) and has an opening overlapping the lower electrode. By this, the lower electrode of each light emitting element and the transparent conductive film of each light emitting element are respectively arranged in an island shape. It becomes possible to separate them.

[0165] The light-shielding layer 123 also has the function of blocking light from the adjacent light-emitting elements. The optical layer 123 may not be provided.

[0166] <Configuration Example 11 of Light-Emitting Device> Next, a configuration example different from the light emitting device 176 shown in FIG. 15 will be explained below with reference to FIG. 18. Make it clear.

[0167] FIG. 18 is a cross-sectional view illustrating an example of a light-emitting device according to one embodiment of the present invention. 15 to 17, the same hatch patterns are used for the parts having the same functions as those shown in FIGS. 15 to 17. In addition, parts with similar functions are assigned the same symbols. , the detailed description of which may be omitted.

[0168] The light emitting device 176 shown in FIG. 18 includes the light emitting device 170 shown in FIG. 15 and each light emitting element (light emitting element E of the light emitting element 101R, the light emitting element 101G, the light emitting element 101B, and the light emitting element 101Y Specifically, each light-emitting element of the light-emitting device 176 shown in FIG. Between the light-emitting layer 110 and the electron transport layer 133, the electron injection layer 134, and the charge generation layer 1 18, the hole injection layer 135 and the hole transport layer 136 are not provided. As described above, by providing the light-emitting layer 108 and the light-emitting layer 110 in contact with each other, the EL layer This allows for a reduction in the number of layers, thereby reducing manufacturing costs. In the example 8, although not shown, a light-emitting material is contained between the light-emitting layer 108 and the light-emitting layer 110. A buffer layer (also called a separation layer) may be provided. This is similar to the light emitting device 170 shown in FIG. 15, and similar effects are achieved.

[0169] <Configuration Example 12 of Light-Emitting Device> Next, a configuration example different from the light emitting device 170 shown in FIG. 15 will be explained below with reference to FIG. 19. Make it clear.

[0170] FIG. 19 is a cross-sectional view illustrating an example of a light-emitting device according to one embodiment of the present invention. 15 to 18, the same hatch patterns are used for parts having the same functions as those shown in FIGS. 15 to 18. In addition, parts with similar functions are assigned the same symbols. , the detailed description of which may be omitted.

[0171] The light emitting device 178 shown in FIG. 19 has the optical element 124 included in the light emitting device 176 shown in FIG. By adopting a configuration that does not include the optical element 124Y, the light emitting element 10 The light emitted from 1Y can be directly extracted to the outside, reducing power consumption. However, when improving color purity or suppressing external light reflection, In this case, a light emitting device 176 shown in FIG. 18 may be provided with an optical element 124Y. Other configurations are similar to the light emitting device 176 shown in FIG. , has a similar effect.

[0172] <Configuration Example 13 of Light-Emitting Device> Next, a configuration example different from the light emitting device 170 shown in FIG. 15 will be explained below with reference to FIG. 20. Make it clear.

[0173] FIG. 20 is a cross-sectional view illustrating an example of a light-emitting device according to one embodiment of the present invention. 15 to 19, the same hatch patterns are used for parts having the same functions as those shown in FIGS. 15 to 19. In addition, parts with similar functions are assigned the same symbols. , the detailed description of which may be omitted.

[0174] The light emitting device 190 shown in FIG. 20 includes the light emitting device 176 shown in FIG. 18 and each light emitting element (light emitting element E of the light emitting element 101R, the light emitting element 101G, the light emitting element 101B, and the light emitting element 101Y The L layer has a different structure. Specifically, between the light-emitting layer 110 and the electron transport layer 137, The light-emitting layer 112 is the same as the light-emitting layer 112 of the light-emitting device 172 shown above. The other configurations are the same as those of the light emitting device 176 shown in FIG. It has the same effect.

[0175] <Configuration Example 14 of Light-Emitting Device> 15 to 20 show examples of top-emission light-emitting devices. As shown in FIGS. 21 to 26, a bottom emission type light emitting device may also be used.

[0176] FIG. 21 is a cross-sectional view of a light emitting device 170A, which is a modification of the light emitting device 170 shown in FIG. 22 is a cross-sectional view of a light emitting device 172A, which is a modification of the light emitting device 172 shown in FIG. 23 is a side view of the light emitting device 17, which is a modification of the light emitting device 154 shown in FIG. 24 is a cross-sectional view of the light emitting device 176 shown in FIG. 25 is a cross-sectional view of the light emitting device 176A. Also, FIG. 25 is a modified example of the light emitting device 178 shown in FIG. 26 is a cross-sectional view of the light emitting device 178A. 1 is a cross-sectional view of an example light emitting device 190A.

[0177] In the case of a bottom emission type light emitting device as shown in FIGS. 21 to 26, each light emitting element The lower electrode and upper electrode of the element may be configured as follows.

[0178] For example, the lower electrode 104R, the lower electrode 104G, the lower electrode 104B, and the lower electrode 10 4Y has a function of reflecting visible light and a function of transmitting visible light. 120 has the function of reflecting visible light.

[0179] The configurations of the light emitting devices exemplified above can be used in appropriate combination. do.

[0180] <Components of the Light-Emitting Device> Here, the components of each light-emitting element shown in FIGS. 1 to 26 will be described in detail below. .

[0181] <Substrate> The substrate 102 is used as a support for each light-emitting element. The substrates 102 and 122 are made of, for example, glass, quartz, or Plastic or the like can be used. A flexible substrate can also be used. refers to a bendable (flexible) substrate, such as polycarbonate and plastic substrates made of polyarylate. Films and the like can also be used. Any other material may be used as long as it functions as a support. Any material may be used as long as it has the function of protecting the optical element.

[0182] For example, in this specification and the like, transistors and light-emitting elements are formed using various substrates. The type of substrate is not limited to a specific one. An example of the substrate is as follows: Examples include semiconductor substrates (such as single crystal substrates or silicon substrates), SOI substrates, and glass substrates. , quartz substrate, plastic substrate, metal substrate, stainless steel substrate, stainless steel Substrate with tungsten foil, tungsten substrate, substrate with tungsten foil, flexible Examples include a flexible substrate, a laminated film, a paper containing fibrous material, or a base film. Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, or Soda lime glass, etc. Flexible substrates, laminated films, base films, etc. Examples include polyethylene terephthalate (PET) ), polyethylene naphthalate (PEN), polyethersulfone (PES), polythene There are plastics such as tetrafluoroethylene (PTFE). Examples of the material include resins such as acrylic. Other examples include polypropylene, polyester, etc. Polyvinyl fluoride, or polyvinyl chloride. Amide, polyimide, aramid, epoxy, inorganic vapor deposition film, paper, etc. In addition, a transistor is manufactured using a semiconductor substrate, a single crystal substrate, an SOI substrate, or the like. This results in less variation in characteristics, size, or shape, a high current capacity, and a wide range of sizes. Small transistors can be manufactured. Circuits can be constructed using these transistors. By forming the circuit, it is possible to reduce the power consumption of the circuit or to increase the integration density of the circuit.

[0183] In addition, a flexible substrate is used as the substrate, and transistors and light-emitting elements are directly formed on the flexible substrate. Alternatively, a separation layer may be provided between the substrate and the transistor. After completing a part or all of the semiconductor device on it, it is separated from the substrate and transferred to another substrate. In this case, the transistor can be mounted on a substrate with poor heat resistance or a flexible substrate. The above-mentioned peeling layer may be formed of, for example, a tungsten film and a silicon oxide film. The laminated structure of the inorganic film and the substrate, or the structure in which a resin film such as polyimide is formed on the substrate, etc. It can be used.

[0184] That is, a transistor or a light-emitting element is formed on a certain substrate, and then the transistor or light-emitting element is formed on another substrate. The transistors and light-emitting elements may be transposed and disposed on a separate substrate. An example of a substrate onto which a transistor or a light-emitting element is transferred is a substrate on which the above-described transistor is formed. In addition to the substrates that can be used, cellophane substrates, stone substrates, wood substrates, and cloth substrates (natural fibers) (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or recycled fibers (including acetate, cupro, rayon, recycled polyester, etc.), leather substrate, or These substrates are suitable for forming transistors with good characteristics. , forming low-power transistors, manufacturing durable devices, imparting heat resistance, and reducing weight Alternatively, it is possible to achieve a thinner design.

[0185] <Lower electrode> The lower electrode 104R, the lower electrode 104G, the lower electrode 104B, and the lower electrode 104Y are The lower electrode 104R functions as an anode or a cathode of each light-emitting element. The lower electrode 104G, the lower electrode 104B, and the lower electrode 104Y are made of a conductive material having reflectivity containing silver. It is preferable that the conductive material is silver (Ag) or silver (Ag) and M (M stands for yttrium (Y), neodymium (Nd), magnesium (Mg), aluminum Al, Ti, Ga, Zn, Indium ), tungsten (W), manganese (Mn), ytterbium (Yb), tin (Sn), iron (Fe), Nickel (Ni), Copper (Cu), Palladium (Pd), Iridium (Ir), Examples of alloys containing silver include alloys containing silver (or gold (Au)). , alloys containing silver, palladium and copper, alloys containing silver and copper, alloys containing silver and magnesium, silver and alloys containing nickel and silver and gold.

[0186] In addition, the lower electrode 104R, the lower electrode 104G, the lower electrode 104B, and the lower electrode 104 Conductive materials that can be used for Y should have a visible light reflectance of 40% or more and 100% or less. , preferably 70% or more and 100% or less, and the resistivity is 1×10 -2 Ω cm or more The following materials are also listed: the lower electrode 104R, the lower electrode 104G, and the lower electrode 104B and the lower electrode 104Y are formed by sputtering, vapor deposition, printing, coating, or the like. It can be formed using

[0187] <Transparent conductive film> The transparent conductive film 106R, the transparent conductive film 106G, the transparent conductive film 106B, and the transparent conductive film 10 6Y functions as a lower electrode, an anode or a cathode of each light-emitting element. The transparent conductive film 106R, the transparent conductive film 106G, the transparent conductive film 106B, and the transparent conductive film 106Y are The optical path is set to resonate the desired light from each light-emitting layer and enhance its wavelength. It has the function of adjusting.

[0188] The transparent conductive film 106R, the transparent conductive film 106G, the transparent conductive film 106B, and the transparent conductive film 10 Examples of 6Y include ITO, ITSO, and indium oxide-zinc oxide (Indium Zinc Oxide), tungsten oxide and indium oxide containing zinc oxide, etc. In particular, the transparent conductive film 106R, the transparent conductive film 106G, and the transparent conductive film 106R can be used. The transparent conductive film 106B and the transparent conductive film 106Y are made of a material having a large work function (4.0 eV or more). It is preferable to use the transparent conductive film 106R, the transparent conductive film 106G, and the transparent conductive film 1 The transparent conductive film 106B and the transparent conductive film 106Y are formed by sputtering, vapor deposition, printing or coating. It can be formed using a fabric method or the like.

[0189] ≪Top electrode≫ The upper electrode 120 functions as a cathode or an anode of each light-emitting element. The pole 120 is made of a conductive material that has reflective properties. The light reflectance is 40% or more and 100% or less, preferably 60% or more and 100% or less, and Its resistivity is 1×10 -2 The upper electrode 12 may be made of a conductive material having a resistance of Ω·cm or less. The conductive material 0 is made of a reflective conductive material and a light-transmitting conductive material. The reflectivity of the material is 20% or more and 80% or less, preferably 40% or more and 70% or less. and its resistivity is 1×10 -2 Examples include conductive materials with a resistance of Ω·cm or less. The external electrode 120 may be made of one or more conductive metals, alloys, conductive compounds, etc. In particular, when the upper electrode 120 functions as a cathode, For example, it is preferable to use a material with a small work function (3.8 eV or less). Elements belonging to Group 1 or 2 of the periodic table (lithium (Li), cesium, and other alkali metals) , alkaline earth metals such as calcium and strontium, magnesium, etc.), Alloys containing rare earth elements (e.g., Ag-Mg, Al-Li), europium, ytterbium, etc. rare earth metals, alloys containing these rare earth metals, aluminum, silver, etc. can also be used. The upper electrode 120 is formed by sputtering, vapor deposition, printing, coating, or the like. It can be formed.

[0190] <Light-emitting layer> The light-emitting layer 108 is at least one selected from the group consisting of purple, blue, and blue-green. The light-emitting layer 110 includes a first light-emitting material that emits light of green, yellow-green, yellow, a second luminescent material that emits at least one light selected from orange and red; The light-emitting layer 112 has a color selected from green, yellow-green, yellow, orange, and red. The light-emitting layer 1 also contains a third luminescent material that exhibits at least one of the luminescences. 08 includes, in addition to the first light-emitting material, one or both of an electron transporting material and a hole transporting material. The light-emitting layer 110 is configured to contain an electron transport material in addition to the second light-emitting material. The light-emitting layer 112 is configured to include one or both of a hole transporting material and a hole transporting material. In addition to the third luminescent material, the light-emitting device may contain one or both of an electron-transporting material and a hole-transporting material. It consists of:

[0191] The first light-emitting substance, the second light-emitting substance, and the third light-emitting substance may be selected from the group consisting of a singlet excited light-emitting substance, a luminescent substance, a luminescent substance having a singlet excited energy ... The materials used are luminescent materials that convert energy into luminescence and triplet excitation energy into luminescence. Examples of the luminescent substance include the following:

[0192] Fluorescent substances are examples of luminescent materials that convert singlet excitation energy into luminescence. , anthracene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, stilbene Derivatives thereof are preferred, for example, N,N'-bis[4-(9H-carbazol-9-yl] )phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2 S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthraquinone) 4-(9H-carbazol-9-yl)triphenylamine (abbreviation: YGAPA), -4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YG APPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]phenyl Nyl]-9H-carbazol-3-amine (abbreviation: PCAPA), 4-(10-phenyl -9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenyl 4-[4-(10-phenyl-9-anthryl)phenyl]-4-(4 ... phenyl]-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA), perylene, 2,5,8,11-tetra(tert-butyl) Perylene (abbreviation: TBP), N,N'-bis[4-(9-phenyl-9H-fluorene- 9-yl)phenyl]-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6 FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9 -phenyl-9H-fluoren-9-yl)phenyl]-pyrene-1,6-diamine (abbreviation Name: 1,6mMemFLPAPrn) and other blue emitting (emission wavelength 400nm or more 480 nm or less), rubrene, 5,12-bis(1,1'-biphenyl-4-isopropyl) 2-(2-[4-(diphenyl)-6,11-diphenyltetracene (abbreviation: BPT) Methylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)pro Pandinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7- Tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H- Yellow luminescence (luminescence) of pyran-4-ylidene}propanedinitrile (abbreviation: DCM2) A substance exhibiting a wavelength of 550 nm or more but less than 600 nm can be used.

[0193] Furthermore, examples of luminescent substances that convert triplet excitation energy into luminescence include phosphorescent substances. For example, a substance having an emission peak in the range of 440 nm to 520 nm can be used. , substances with an emission peak between 520 nm and 600 nm, 600 nm and 700 nm A substance having an emission peak at or below m can be used.

[0194] Substances with an emission peak between 440 nm and 520 nm include tris{2-[ 5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4- Triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: Ir (mpptz-dmp)3), tris(5-methyl-3,4-diphenyl-4H-1,2 ,4-triazolato)iridium(III) (abbreviation: Ir(Mptz)3), tris[3 -(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazo Iridium(III) (abbreviation: Ir(iPr5btz)3), tris[4-(3- Biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]i 4H-triazolium compounds such as rhodium(III) (abbreviated as Ir(iPrptz-3b)3) Organometallic iridium complexes with a methyl group skeleton and tris[3-methyl-1-(2-methylphenyl) (Nyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation :Ir(Mptz1-mp)3), tris(1-methyl-5-phenyl-3-propyl- 1H-1,2,4-triazolato)iridium(III) (abbreviation: Ir(PrPrtZl- Organometallic iridium complexes with 1H-triazole skeletons, such as Me)3), and fac -tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazoline Iridium(III) (abbreviation: Ir(iPrpmi)3), tris[3-(2,6- Dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium Ir(dmpimpt-Me)3) Organometallic iridium complexes and bis[2-(4',6'-difluorophenyl)pyridinium] Nat-N,C 2’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation :FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5' -bis(trifluoromethyl)phenyl]pyridinato-N,C 2’} Iridium (III ) picolinate (abbreviation: Ir(CF3ppy)2(pic)), bis[2-(4',6' (difluorophenyl)pyridinato-N,C 2’ ]Iridium(III) acetylacetonate Phenylpyridine derivatives bearing electron-withdrawing groups such as acetylacetate (abbreviation: FIr(acac)) Among the above, 4H-triazol-1-thiazolium complexes are organometallic iridium complexes with 4H-triazol-1-thiazolium as a ligand. Organometallic iridium complexes with a zole skeleton are particularly suitable for this purpose, as they are highly reliable and have excellent luminescence efficiency. preferable.

[0195] Substances with an emission peak between 520 nm and 600 nm include tris(4-methylphenyl) (6-phenyl-6-pyrimidinato)iridium(III) (abbreviation: Ir(mppm)3) , tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: Ir(tBuppm)3), (acetylacetonato)bis(6-methyl-4-phenylpiperidinyl) Iridium(III) (abbreviation: Ir(mppm)2(acac)), (acetonitrile (6-tert-butyl-4-phenylpyrimidinato)iridium (III) (abbreviation: Ir(tBuppm)2(acac)), (acetylacetonato)bi Bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) Name: Ir(nbppm)2(acac)), (acetylacetonato)bis[5-methyl- 6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation Ir(mpmppm)2(acac)), (acetylacetonato)bis(4,6-difluoromethyl (phenylpyrimidinato)iridium(III) (abbreviation: Ir(dppm)2(acac)) Organometallic iridium complexes having a pyrimidine skeleton, such as (acetylacetonato)bi Bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: Ir( mppr-Me)2(acac)), (acetylacetonato)bis(5-isopropyl- 3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: Ir(mppr- iPr)2(acac)) and organometallic iridium complexes with pyrazine skeletons, such as Tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: Ir(pp y)3), bis(2-phenylpyridinato-N,C 2’ ) Iridium(III) acetyl Acetonate (abbreviation: Ir(ppy)2(acac)), bis(benzo[h]quinolinato ) Iridium(III) acetylacetonate (abbreviation: Ir(bzq)2(acac)) , tris(benzo[h]quinolinato)iridium(III) (abbreviation: Ir(bzq)3) , tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: Ir( pq)3), bis(2-phenylquinolinato-N,C 2’ ) Iridium(III) acetyl Ir(pq)2(acac) and other compounds with pyridine skeletons In addition to organometallic iridium complexes, tris(acetylacetonato)(monophenanthroline)tetrahydrogen Rare earth metal complexes such as rubium(III) (abbreviated as Tb(acac)3(Phen)) Among the above, organometallic iridium complexes having a pyrimidine skeleton are This is particularly preferable because it is remarkably excellent in reliability and luminous efficiency.

[0196] In addition, among substances that have an emission peak between 520 nm and 600 nm, 5 It is preferable to use a substance that has an emission peak between 50 nm and 580 nm. By using a substance with an emission peak of 580 nm or more, the current efficiency of the light-emitting element can be improved. can be increased.

[0197] Substances with an emission peak between 550 nm and 580 nm include Ir(mpmp pm)2(acac)), (acetylacetonato)bis{4,6-dimethyl-2-[6- (2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridi Ir(dmppm-dmp)2(acac)), Ir(mppr- iPr)2(acac), Ir(pq)3, Ir(bzq)2(acac), bis(2, 4-Diphenyl-1,3-oxazolato-N,C 2’ ) Iridium(III) acetylacetone Setonate (abbreviation: Ir(dpo)2(acac)), bis{2-[4'-(perfluorooctadecyl) (triphenyl)phenyl]pyridinato-N,C 2’}Iridium(III) acetylacetonate nate (abbreviation: Ir(p-PF-ph)2(acac)), bis(2-phenylbenzothiazol-1-yl) Azorato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: Ir(bt )2(acac)) etc.

[0198] In addition, substances with an emission peak between 600 and 700 nm include (diisobutylene) (arylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium( III) (abbreviation: Ir(5mdppm)2(dibm)), bis[4,6-bis(3-methyl (diphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: Ir(5mdppm)2(dpm)), bis[4,6-di(naphthalen-1-yl)pyri [midinato](dipivaloylmethanato)iridium(III) (abbreviation: Ir(d1npm) Organometallic iridium complexes with pyrimidine skeletons, such as 2(dpm) and (acetyl Acetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation : Ir(tppr)2(acac)), bis(2,3,5-triphenylpyrazinate)( Dipivaloylmethanato)iridium(III) (abbreviation: Ir(tppr)2(dpm)) , (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato ]Iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]) Organometallic iridium complexes with a quinone skeleton and tris(1-phenylisoquinolinato-N, C 2’ ) Iridium(III) (abbreviation: Ir(piq)3), bis(1-phenylisoxid Norinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: Ir(pi q) In addition to organometallic iridium complexes with a pyridine skeleton such as 2(acac)), 2, 3,7,8,12,13,17,18-Octaethyl-21H,23H-porphyrin White Platinum complexes such as gold(II) (abbreviated as PtOEP) and tris(1,3-diphenyl-1 ,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: E u(DBM)3(Phen)), tris[1-(2-thenoyl)-3,3,3-triflate [Oroacetonato](monophenanthroline)europium(III) (abbreviation: Eu(TT A) 3(Phen)) and other rare earth metal complexes. Organometallic iridium complexes with an iridium skeleton are highly reliable and have excellent luminous efficiency. In addition, organometallic iridium complexes having a pyrazine skeleton are particularly preferred. Light emission is obtained.

[0199] In addition, the electron transport material used in the light-emitting layer 108, the light-emitting layer 110, and the light-emitting layer 112 is is preferably a π-electron deficient heteroaromatic compound such as a nitrogen-containing heteroaromatic compound, for example , 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxa Phosphorus (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophene-4-yl) 2mDBTBPD Bq-II), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl] nyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3- (Dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as 7mDBTPDBq-II) and 6-[3-(dibenzothiophen-4-yl)phenyl] quinoxaline such as quinoxaline [f,h] (abbreviation: 6mDBTPDBq-II) Examples include sarin and dibenzoquinoxaline derivatives.

[0200] In addition, the hole transport material used in the light-emitting layer 108, the light-emitting layer 110, and the light-emitting layer 112 is is a π-electron-rich heteroaromatic compound (e.g., carbazole derivatives and indole derivatives) Aromatic amine compounds are preferred, for example, 4-phenyl-4'-(9-phenyl-9H- Carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-di (1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenyl PCBNBB, 3-[N-(1-naphthyl)-N-(9-phenyl Carbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1 ), 4,4',4''-tris[N-(1-naphthyl)-N-phenylamino]triphenyl Nylamine (abbreviation: 1'-TNATA), 2,7-bis[N-(4-diphenylamino) (phenyl)-N-phenylamino]-spiro-9,9'-bifluorene (abbreviation: DPA2S F), N,N'-bis(9-phenylcarbazol-3-yl)-N,N'-diphenyl Benzene-1,3-diamine (abbreviation: PCA2B), N-(9,9-dimethyl-2-diphenyl) (phenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), N ,N',N''-triphenyl-N,N',N''-tris(9-phenylcarbazole) -3-yl)benzene-1,3,5-triamine (abbreviation: PCA3B), 2-[N-(9 -phenylcarbazol-3-yl)-N-phenylamino]spiro-9,9'-bifluor Polyolefin (abbreviation: PCASF), 2-[N-(4-diphenylaminophenyl)-N-phenyl] Nylamino]spiro-9,9'-bifluorene (abbreviation: DPASF), N,N'-bis[ 4-(carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethyl Fluorene-2,7-diamine (abbreviation: YGA2F), 4,4'-bis[N-(3-methyl phenyl)-N-phenylamino]biphenyl (abbreviation: TPD), 4,4'-bis[N -(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPA B), N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl 2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl) Amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), 3 -[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenyl PCzPCA1, 3-[N-(4-diphenylaminophenyl )-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3, 6-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenyl PCzDPA2, 4,4'-bis(N-{4-[N'-(3- Methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), 3,6-bis[N-(4-diphenylaminophenyl)-N- (1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), 3, 6-Bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9- Phenylcarbazole (abbreviation: PCzPCA2) is an example.

[0201] <Hole injection layer, hole transport layer> The hole injection layer 131 transports holes to the light emitting layer 108 via the hole transport layer 132, which has high hole transport properties. The layer is a layer into which holes are injected, and contains a hole transporting material and / or an acceptor material. In the case where a hole transporting material and an acceptor material are included, the hole transporting material is obtained by the acceptor material. Electrons are extracted from the material, generating holes, which are transported through the hole transport layer 132 to the light-emitting layer Holes are injected into the hole transport layer 108. The hole transport layer 132 is formed using a hole transport material. The hole injection layer 135 is connected to the light emitting layer 1 via the hole transport layer 136, which has high hole transport properties. 10 is a layer for injecting holes into the substrate, and contains a hole transport material and / or an acceptor material. When the layer contains a hole transporting material and an acceptor material, the acceptor material Electrons are extracted from the hole transport material to generate holes, which are transported through the hole transport layer 136. Holes are injected into the light-emitting layer 110. The hole transport layer 136 is made of a hole transport material. The hole injection layer 131 and the hole injection layer 135 are formed by using an acceptor material. It may be formed alone or in a mixture with other materials.

[0202] The acceptor substances used in the hole injection layer 131 and the hole injection layer 135 include: Examples include oxides of metals belonging to groups 4 to 8 of the periodic table. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, ruthenium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among them, molybdenum oxide is stable in the air, has low hygroscopicity, and is easy to handle. In addition, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroethylene is particularly preferred. Fluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,1 1-Hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HA Examples of compounds include those having electron-withdrawing groups (halogen groups or cyano groups) such as tetrahydrofuran (T-CN). In particular, electron-withdrawing groups are bonded to condensed aromatic rings containing multiple heteroatoms, such as HAT-CN. The compound having the formula (I) is thermally stable and is therefore preferred.

[0203] The hole injection layer 131 and the hole injection layer 135 may also contain phthalocyanine (abbreviation: H2P c) Phthalocyanine compounds such as copper phthalocyanine (CuPc) can be used. do.

[0204] The hole injection layer 131, the hole transport layer 132, the hole injection layer 135, and the hole transport layer 136 are formed of a material selected from the group consisting of: Examples of hole transporting materials include 4,4'-bis[N-(1-naphthyl)-N-phenyl]propanol, N,N'-bis(3-phenylamino)biphenyl (abbreviation: NPB or α-NPD) (1,1'-diphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamino TPD, 4,4',4''-tris(carbazol-9-yl)triphenyl Tris(N,N-diphenylamino) Triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methyl (triphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), 4, 4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino] ]biphenyl (abbreviation: BSPB), aromatic amine compounds such as 3-[N-(9-phenyl carbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N- phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-( 1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenyl Carbazole (abbreviation: PCzPCN1), etc. 1,3,5-tris[4-(N-carbazolyl)biphenyl (abbreviation: CBP) 9-[4-(10-phenyl-9-anthracene]phenyl)benzene (abbreviation: TCPB), Carbazole derivatives such as [(racenyl)phenyl]-9H-carbazole (abbreviation: CzPA) , etc. can be used. The substances mentioned here are mainly 1×10 -6 cm 2 / Vs or more However, if the material has a higher hole transporting property than the electron transporting property, Other materials may also be used. These hole transporting materials may be acceptor materials. It can be used as a composite material with

[0205] Furthermore, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriflate) Phenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl (N'-phenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide (abbreviation: PTPDMA) Poly[N,N'-bis(4-butylphenyl)-N,N'-bis (phenyl)benzidine (abbreviated as Poly-TPD) It is also possible.

[0206] ≪Electron transport layer≫ The electron transport layer 133 and the electron transport layer 137 are layers containing a substance with a high electron transport property. The electron transport layer 133 and the electron transport layer 137 are formed of tris(8-quinolinolato)aluminum ( III) (abbreviation: Alq3), tris(4-methyl-8-quinolinolato)aluminum ( Abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium (abbreviation Name: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato) Aluminum(III) (abbreviation: BAlq), bis[2-(2-benzoxazolyl)fluor] Enolato]zinc(II) (abbreviation: Zn(BOX)2), bis[2-(2-hydroxyphenyl) Using metal complexes such as [(benzothiazol-1)benzothiazol-2]zinc (abbreviated as Zn(BTZ)2) In addition, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)- 1,3,4-Oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert- butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD -7), 3-(4-tert-butylphenyl)-4-phenyl-5-(4-biphenyl) 3-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), (4-ethylphenyl)-4-(4-ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazo p-EtTAZ, Bathophenanthroline (Bphen), Bathocu Proine (abbreviation: BCP), 4,4'-bis(5-methylbenzoxazol-2-yl) Heteroaromatic compounds such as stilbene (abbreviation: BzOs) can also be used. Poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluoro) PF-Py , poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine) lysine-6,6'-diyl)] (abbreviated as PF-BPy) The materials mentioned here are mainly 1×10 -6 cm 2 / Vs or higher electron mobility It should be noted that any substance other than those mentioned above that has a higher electron transporting property than holes can be used. It may be used as the electron transport layer 133 and the electron transport layer 137 .

[0207] The electron transport layer 133 and the electron transport layer 137 may be formed not only from a single layer but also from the above-mentioned materials. Two or more layers made of these materials may be laminated.

[0208] ≪Electron injection layer≫ The electron injection layer 134 and the electron injection layer 138 are layers containing a substance with high electron injection properties. The electron injection layer 134 is made of lithium fluoride (LiF), cesium fluoride (CsF), cesium fluoride (CsF), or fluoride. Calcium (CaF2), lithium oxide (LiO x ) and alkali metals such as alkali Earth metals or their compounds can be used. Also, erbium fluoride (Er F3) can be used. An electride may be used for the electron injection layer 138. Examples of the electride include: Examples include a substance in which a high concentration of electrons is added to a mixed oxide of calcium and aluminum. In addition, the electron injection layer 134 and the electron injection layer 138 are connected to the electron transport layer 133 and the electron transport layer 137. Alternatively, a material that can be used in the above-mentioned cases may be used.

[0209] In addition, the electron injection layer 134 and the electron injection layer 138 contain an organic compound and an electron donor. Such a composite material may be formed by mixing the electron donor. Since electrons are generated in the organic compound, it has excellent electron injection and electron transport properties. The organic compound is preferably a material that is excellent in transporting the generated electrons. For example, the material constituting the electron transport layer 133 and the electron transport layer 137 (metal complex As electron donors, organic compounds can be used. Any substance that exhibits electron donating properties may be used. Specifically, alkali metals, alkaline earth metals, and rare earth metals are suitable. Earth metals are preferred, and lithium, cesium, magnesium, calcium, erbium, In addition, alkali metal oxides and alkaline earth metal oxides are preferred. Preferable examples include lithium oxide, calcium oxide, and barium oxide. Lewis bases such as magnesium chloride can also be used. (abbreviation: TTF) and other organic compounds can also be used.

[0210] <Charge generation layer> When a voltage is applied between a pair of electrodes (a lower electrode and an upper electrode), the charge generating layer 116 , electrons are injected into one of the light-emitting layers (light-emitting layer 108 or light-emitting layer 110) and electrons are injected into the other light-emitting layer ( It has the function of injecting holes into the light-emitting layer 108 or light-emitting layer 110 side.

[0211] For example, in the light emitting device 101B shown in FIG. 1, the lower electrode (lower electrode 104B and transparent When a voltage is applied to the transparent conductive film 106B so that the potential becomes higher than that of the upper electrode 120, Electrons are injected from the charge generating layer 116 into the light emitting layer 108 and holes are injected into the light emitting layer 110 .

[0212] In addition, the charge generation layer 116 is transparent to visible light from the viewpoint of light extraction efficiency ( Specifically, it is preferable that the transmittance of visible light through the charge generating layer 116 is 40% or more. The charge generating layer 116 has a lower conductivity than the pair of electrodes (lower electrode and upper electrode). It still works.

[0213] The charge generation layer 116 is made of a material having a hole transporting property to which an electron acceptor is added. Even if it is a structure in which an electron donor (donor) is added to an electron transporting material, Alternatively, both of these structures may be stacked.

[0214] By forming the charge generating layer 116 using the above-mentioned materials, the light emitting layer is laminated. When the voltage is increased, the increase in the driving voltage can be suppressed.

[0215] The light-emitting layer, the hole transport layer, the hole injection layer, the electron transport layer, the electron injection layer, and the electron The charge generation layer is formed by deposition (including vacuum deposition), inkjet method, coating method, and graphite method. The light-emitting layer, the hole transport layer, the hole In addition to the materials described above, inorganic compounds may be used in the injection layer, electron transport layer, electron injection layer, and charge generation layer. Alternatively, a high molecular compound (oligomer, dendrimer, polymer, etc.) may be used.

[0216] <Optical elements> The optical element 124R, the optical element 124G, the optical element 124B, and the optical element 124Y are It selectively transmits light of a specific color from the incident light. Color filters, bandpass filters, multilayer filters, etc. can be used. In addition, a color conversion element can be applied to the optical element. The color conversion element is an optical element that converts light into light with a longer wavelength than the wavelength of the light. By using the quantum dot method, the light emitting device Color reproducibility can be improved.

[0217] The optical elements 124R, 124G, 124B, and 124 A plurality of optical elements may be stacked on Y. Other optical elements include, for example, a circular polarizer or The circular polarizer is disposed so that the light emitted from the light emitting element of the light emitting device is incident on the circular polarizer. When the light emitting element is provided on the side where the light is emitted, the light incident from the outside of the light emitting device is reflected inside the light emitting device. In addition, by providing an anti-reflection film, it is possible to prevent the light from being emitted to the outside. This can weaken the external light reflected by the surface of the light emitting device. It can be clearly observed.

[0218] ≪Light blocking layer≫ The light-shielding layer 123 has a function of suppressing reflection of external light. The light-shielding layer 123 has a function of preventing the color mixture of light emitted from adjacent light-emitting elements. Examples include metals, resins containing black pigments, carbon black, metal oxides, and multiple metal oxides. A composite oxide containing a solid solution of such a material can be used.

[0219] ≪Bulkhead≫ The partition wall 140 may be formed using an inorganic or organic material as long as it has insulating properties. The inorganic material may be silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, or the like. Examples of the organic material include silicon, aluminum oxide, and aluminum nitride. For example, photosensitive resin materials such as acrylic resin or polyimide resin can be used.

[0220] <Method for manufacturing a light-emitting device> Next, a manufacturing method of a light-emitting device of one embodiment of the present invention will be described below with reference to FIGS. 27 and 28. Here, a method for manufacturing the light-emitting device 174 shown in FIG. .

[0221] 27(A), (B), (C), (D) and 28(A) and (B) show a light-emitting device according to one embodiment of the present invention. 10A to 10C are cross-sectional views for explaining a method for manufacturing the device.

[0222] The method for manufacturing the light emitting device 174 described below includes seven steps, namely, steps 1 to 7. .

[0223] <First Step> The first step is to form the lower electrodes of the light-emitting elements (specifically, the lower electrodes 104R and forming a lower electrode 104G, a lower electrode 104B, and a lower electrode 104Y on the substrate 102; (See FIG. 27(A)).

[0224] In this embodiment, a reflective conductive film is formed on the substrate 102, and the conductive film is By processing the lower electrode 104R, the lower electrode 104G, the lower electrode 104B, and The lower electrode 104Y is formed. An APC film is used as the reflective conductive film. In this way, the lower electrode 104R, the lower electrode 104G, the lower electrode 104B, and the lower electrode 104 By forming Y through the process of processing the same conductive film, it is possible to reduce manufacturing costs. This is preferable because it can

[0225] It should be noted that a plurality of transistors may be formed on the substrate 102 before the first step. In addition, the plurality of transistors, the lower electrode 104R, the lower electrode 104G, and the lower electrode 10 4B and the lower electrode 104Y may be electrically connected to each other.

[0226] <<Second Step>> The second step is to form a transparent conductive film of each light-emitting element (specifically, the transparent conductive film 106R, the transparent Conductive film 106G, transparent conductive film 106B, and transparent conductive film 106Y are formed on the lower electrode. This is the process of performing the above (see FIG. 27(B)).

[0227] In this embodiment, the substrate 102, the transparent conductive film 106R, the transparent conductive film 106G ... A transparent conductive film is formed on the transparent conductive film 106B and the transparent conductive film 106Y. By processing the transparent conductive film 106R, the transparent conductive film 106G, and the transparent conductive film 106R into a desired shape, As the transparent conductive film, an ITSO film is used. There are.

[0228] The transparent conductive film 106R, the transparent conductive film 106G, the transparent conductive film 106B, and the transparent conductive film 106G are The film 106Y may be formed in a plurality of steps. The transparent conductive film 106R and the transparent conductive film 106G have a thickness that forms a microcavity structure in the element. A transparent conductive film 106B and a transparent conductive film 106Y can be formed.

[0229] <Third Step> The third step is to form the partition wall 140 that covers the lower electrode of each light emitting element and the edge of the transparent conductive film. This is a process for forming a semiconductor device (see FIG. 27(C)).

[0230] The partition wall 140 has an opening so as to overlap with the lower electrode. The transparent conductive film functions as an anode of the light-emitting element. An imide-based resin is used.

[0231] In the first to third steps, the EL layer (layer containing an organic compound) is not damaged. Since there is no risk of this, various film forming methods and microfabrication techniques can be applied. In the method, a reflective conductive film is formed by sputtering, and the conductive film is then etched by lithography. The conductive film is patterned and then dry or wet etched. The conductive film is processed into islands to form lower electrodes 104R, 104G, 104B, Then, a transparent conductive film is formed by sputtering. Then, a pattern is formed on the transparent conductive film using a lithography method, and then wet etching is performed. The transparent conductive film is processed into an island shape using a coating method to form the transparent conductive film 106R and the transparent conductive film 106 G, the transparent conductive film 106B, and the transparent conductive film 106Y are formed.

[0232] <Fourth Step> The fourth step is to form a hole injection layer 131, a hole transport layer 132, an emissive layer 108, an electron transport layer 133, the electron injection layer 134, and the charge generation layer 116 (FIG. 27(D) reference).

[0233] The hole injection layer 131 is formed by co-evaporating a hole transporting material and a material containing an acceptor material. Co-evaporation is the process of depositing different materials on different surfaces. The hole transport layer 132 is a vapor deposition method in which the hole It can be formed by vapor deposition of a transport material.

[0234] The light-emitting layer 108 is formed of at least one of purple, blue, and blue-green. The first light-emitting material can be formed by evaporating a first light-emitting material that emits one kind of light. As the optical substance, a fluorescent organic compound can be used. The material may be deposited alone or in a mixture with other materials. For example, fluorescent An organic compound is used as a guest material, and the guest material is placed in a host material that has a higher excitation energy than the guest material. The material may be dispersed and vapor deposited.

[0235] The electron transport layer 133 can be formed by evaporating a substance with a high electron transport property. The electron injection layer 134 can be formed by evaporating a material with high electron injection properties. It is possible.

[0236] The charge generation layer 116 is made of a material in which an electron acceptor is added to a hole transport material. or a material in which an electron donor (donor) is added to an electron transporting material. It can be formed by

[0237] <5th step> The fifth step is to form a hole injection layer 135, a hole transport layer 136, an emissive layer 110, an electron transport layer This is a step of forming a metal oxide film 137, an electron injection layer 138, and an upper electrode 120 (see FIG. 28(A)). (see).

[0238] The hole injection layer 135 is formed using the same material and method as the hole injection layer 131 described above. The hole transport layer 136 can be formed by the above-described hole transport layer 13. It can be formed using the same materials and methods as in 2.

[0239] The light-emitting layer 110 may be formed of at least one material selected from the group consisting of green, yellow-green, yellow, orange, and red. The second luminescent material can be formed by evaporating a second luminescent material that exhibits at least one luminescence. As the second light-emitting substance, a phosphorescent organic compound can be used. The reactive organic compound may be deposited alone or in combination with other materials. For example, a phosphorescent organic compound is used as the guest material, and a host with a higher excitation energy than the guest material is used. The guest material may be dispersed in a host material and vapor-deposited.

[0240] The electron transport layer 137 can be formed by evaporating a substance with a high electron transport property. The electron injection layer 138 can be formed by evaporating a material with high electron injection properties. It is possible.

[0241] The upper electrode 120 is formed by stacking a conductive film having reflectivity and a conductive film having light-transmitting properties. The upper electrode 120 can be formed by a single layer structure or a multilayer structure. It may also be constructed as such.

[0242] Through the above steps, the light emitting element 101R, the light emitting element 101G, the light emitting element 101B, and the light emitting element 101C are The element 101Y is formed on the substrate 102.

[0243] <Sixth Step> In the sixth step, a light-shielding layer 123, an optical element 124R, and an optical element 124 are formed on the substrate 122. G, the step of forming the optical elements 124B and 124Y (see FIG. 28(B)). ).

[0244] The light-shielding layer 123 is formed by forming a resin film containing a black pigment in a desired area. On the plate 122 and the light-shielding layer 123, optical elements 124R, 124G, and 124 B and optical element 124Y are formed. As for optical element 124R, a resin containing a red pigment is formed. The oil film is formed in the desired area. The optical element 124G is made of a resin containing a green pigment. The optical element 124B is formed by a resin film containing a blue pigment. In addition, the optical element 124Y is formed by forming a resin film containing a yellow pigment. Form in desired area.

[0245] <Seventh Step> The seventh step is to form the light emitting elements 101R, 101G, and A light emitting element 101B, a light emitting element 101Y, a light blocking layer 123 formed on a substrate 122, The optical element 124R, the optical element 124G, the optical element 124B, and the optical element 124Y, This is a process of laminating the components together and sealing them with a sealing material (not shown).

[0246] Through the above steps, the light emitting device 174 shown in FIG. 17 can be formed.

[0247] As described above, this embodiment mode can be combined with other embodiments mode as appropriate.

[0248] (Embodiment 2) In this embodiment, a light-emitting element according to one embodiment of the present invention, a light-emitting device according to one embodiment of the present invention, or a light-emitting device according to one embodiment of the present invention will be described. 2 shows a light-emitting mechanism of a light-emitting element that can be used in a display device of one embodiment of the present invention. The following description will be given with reference to Figures 9 to 31.

[0249] In this specification, the term "fluorescent material" refers to a material that emits light at the lowest level (S1 level) of the singlet excited state. Phosphorescent materials are materials that emit light in the visible light region when they relax from the ion-excited state to the ground state. When the lowest excited state (T1 level) relaxes to the ground state, visible light is emitted at room temperature. In other words, phosphorescent materials are materials that can convert triplet excitation energy into A material that can be converted into visible light.

[0250] In this specification, room temperature refers to any temperature between 0°C and 40°C.

[0251] FIG. 29 is a schematic cross-sectional view of a light emitting element 450. As shown in FIG.

[0252] The light-emitting element 450 shown in FIG. 29 has an EL element between a pair of electrodes (electrode 401 and electrode 402). In the light-emitting element 450, the electrode 401 serves as an anode. The following description will be given assuming that the electrode 401 functions as a cathode and the electrode 402 functions as a cathode, but the reverse is also possible. stomach.

[0253] The EL layer 400 includes a light-emitting layer 413 and a light-emitting layer 414. In 450, the EL layer 400 includes a hole injection layer 413 and a light emitting layer 414. 411, hole transport layer 412, electron transport layer 415, and electron injection layer 416 are shown. However, these laminated structures are only examples, and the configuration of the EL layer 400 in the light-emitting element 450 is not limited to these. For example, the order in which the layers in the EL layer 400 are stacked may be changed. Alternatively, the EL layer 400 may be provided with a functional layer other than the above-mentioned layers. For example, the function of injecting carriers (electrons or holes), the function of transporting carriers, It is sufficient to have a configuration that has a function of suppressing carriers and a function of generating carriers.

[0254] The light-emitting layer 413 contains a guest material 421 and a host material 422. The optical layer 414 includes a guest material 431, an organic compound 432, and an organic compound 433. In the following description, the guest material 421 is a fluorescent material and the guest material 431 is a phosphorescent material. do.

[0255] <Light Emission Mechanism of the Light Emitting Layer 413> First, the light emitting mechanism of the light emitting layer 413 will be explained below.

[0256] In the light-emitting layer 413, an excited state is formed by recombination of carriers. Since the host material 422 is present in a large amount compared to 1, the excited state is almost entirely in the host material 42 The electrons exist as excited states of singlet and triplet states, which arise from carrier recombination. The ratio of excited states (hereafter referred to as exciton generation probability) is approximately 1:3.

[0257] First, when the T1 level of the host material 422 is higher than the T1 level of the guest material 421, The following explains this.

[0258] Energy transfer from the triplet excited state of the host material 422 to the guest material 421 (triplet excited state) However, since the guest material 421 is a fluorescent material, triple The triplet excited state of the host material 422 does not emit light in the visible light region. Therefore, it is difficult to utilize the T1 level of the host material 422 as the guest When the T1 level of the material 421 is higher, the maximum number of injected carriers is about Only 25% of it can be used for light emission.

[0259] Next, the energy level of the host material 422 and the guest material 421 in the light-emitting layer 413 is The correlation between the positions is shown in Figure 30(A). The notations and symbols in Figure 30(A) are as follows: It is. Host: Host material 422 Guest: Guest material 421 (fluorescent material) ·S FH : The lowest singlet excited state of the host material 422 T FH : The lowest triplet excited state of the host material 422 ·S FG : The lowest level of the singlet excited state of guest material 421 (fluorescent material) T FG : The lowest level of the triplet excited state of guest material 421 (fluorescent material)

[0260] As shown in FIG. 30(A), the T1 level of the guest material (T FG ) is the T1 level of the host material (T FH ) is a higher configuration.

[0261] As shown in Figure 30(A), triplet-triplet annihilation (TTA) Triplet Annihilation (AAA) occurs when triplet excitons collide with each other. As a result, a part of it rises to the lowest level of the singlet excited state (S FH ) The lowest singlet excited state of the host material (S FH ) from the lower level The lowest singlet excited state (S FG ) energy transfer This occurs (see Route A in Figure 30(A)), and the guest material (fluorescent material) emits light.

[0262] Note that the T1 level of the host material is lower than the T1 level of the guest material, so T FG is inactivated Without FH Energy transfer occurs to TT (see Route B in Figure 30(A)). It is used for A.

[0263] By configuring the light-emitting layer 413 as described above, light emission from the guest material 421 of the light-emitting layer 413 can be prevented. can be obtained efficiently.

[0264] <Light Emission Mechanism of the Light Emitting Layer 414> Next, the light emitting mechanism of the light emitting layer 414 will be described below.

[0265] The organic compound 432 and the organic compound 433 contained in the light-emitting layer 414 are exciplexes (Exc Forms either organic compound 432 or organic compound 433. One serves as a host material for the light-emitting layer 414, and is made of organic compound 432 or organic compound 4 The other of the layers 33 functions as an assist material for the light-emitting layer 414. describes organic compound 432 as a host material and organic compound 433 as an assist material. Do the following.

[0266] A combination of organic compounds 432 and 433 that form an exciplex in the light-emitting layer 414 The combination may be any combination that can form an exciplex, but one of them must be a hole transporting It is more preferable that one of the first and second layers is a material having electron transport properties and the other is a material having electron transport properties. In this case, it becomes easier to form a donor-acceptor type excited state, and the exciplex can be efficiently generated. In addition, a material having hole transport properties and a material having electron transport properties can be formed. By combining with materials, a combination of organic compound 432 and organic compound 433 is formed. When using a mixture of these two materials, the carrier balance can be easily controlled by adjusting the mixture ratio. The ratio of the material having hole transporting properties to the material having electron transporting properties is 1:9 to 9:1 (by weight). In addition, by having this configuration, the carrier balance can be easily controlled. Therefore, the recombination region can be easily controlled.

[0267] The organic compound 432, the organic compound 433, and the guest material 431 in the light-emitting layer 414 The correlation of the energy levels is shown in FIG. 30(B). The numbers are as follows: ·Host:Organic Compound 432 ·Assist:Organic Compound 433 Guest: Guest material 431 (phosphorescent material) ·S PH : The lowest singlet excited state of the host material (organic compound 432) T PH : The lowest triplet excited state of the host material (organic compound 432) T PG : The lowest level of the triplet excited state of guest material 431 (phosphorescent material) ·S E : The lowest level of the singlet excited state of an exciplex TE : The lowest level of the triplet excited state of an exciplex

[0268] In the light-emitting element of one embodiment of the present invention, the organic compound 432 and the organic compound 433 contained in the light-emitting layer 414 Compound 433 forms an exciplex. The lowest singlet excited state of the exciplex (S E ) and the lowest triplet excited state of the exciplex (T E ) are adjacent to each other (Figure 3 (See 0(B)Route C).

[0269] An exciplex is an excited state consisting of two substances. In the case of photoexcitation, the excited state formed by the interaction of one molecule with another in its ground state, and When the compound reaches the ground state by emitting light, the two substances that formed the exciplex are In the case of electrical excitation, one cation molecule (hole) and the other When the anion molecules (electrons) of one of the two molecules approach each other, an exciplex can be formed. In this case, exciplexes can be formed without forming an excited state in any molecule. This leads to a reduction in the driving voltage. E ) and (T E ) both The energy is transferred to the lowest level of the triplet excited state of the guest material 431 (phosphorescent material). This results in light emission (see Route D in Figure 30(B)).

[0270] The above-described processes of Route C and Route D are referred to as E in this specification. It is called xTET (Exciplex-Triplet Energy Transfer). In other words, the light-emitting element 450 converts the exciplex into the guest material 431 (phosphorescent material). There is an exchange of energy.

[0271] In addition, organic compound 432 and organic compound 433 receive holes and electrons, respectively. When they approach each other, they quickly form an exciplex. Then, it quickly interacts with the other substance to form an exciplex. Most of the excitons in the light-emitting layer 414 exist as exciplexes. The band gap is smaller than that of both the organic compound 432 and the organic compound 433. The recombination of the hole and the electron on the other side forms an exciplex, which reduces the driving voltage. It is possible.

[0272] By configuring the light-emitting layer 414 as described above, the guest material 431 (phosphorescent material ) can be efficiently obtained.

[0273] <Light Emission Mechanism of the Light Emitting Layers 413 and 414> The light-emitting mechanisms of the light-emitting layers 413 and 414 have been described above. As shown in element 450, light-emitting layer 413 and light-emitting layer 414 are in contact with each other. In this case, the host of the emitting layer 413 is converted from the exciplex at the interface between the emitting layer 413 and the emitting layer 414. Energy transfer to material 422 (especially triplet excited level energy transfer) occurs. Even if the triplet excitation energy is not converted into light emission, the triplet excitation energy can be converted into light emission in the light-emitting layer 413.

[0274] The T1 level of the host material 422 of the light-emitting layer 413 is higher than that of the organic compound of the light-emitting layer 414. It is preferable that the T1 level of the light-emitting layer 413 is lower than the T1 level of the organic compound 432 and the organic compound 433. In this case, the S1 level of the host material 422 is higher than the S1 level of the guest material 421 (fluorescent material). The T1 level of the host material 422 is higher than the T1 level of the guest material 421 (fluorescent material). It is preferable that the value is lower than that.

[0275] Specifically, when TTA is used for the light-emitting layer 413 and ExTET is used for the light-emitting layer 414, The correlation of energy levels is shown in Figure 31. The notations and symbols in Figure 31 are as follows: It is. Fluorescence EML: Fluorescent light-emitting layer (light-emitting layer 413) Phosphorescence EML: Phosphorescent light-emitting layer (light-emitting layer 414) ·S FH : The lowest singlet excited state of the host material 422 T FH : The lowest triplet excited state of the host material 422 ·S FG : The lowest level of the singlet excited state of guest material 421 (fluorescent material) T FG : The lowest level of the triplet excited state of guest material 421 (fluorescent material) ·S PH : The lowest singlet excited state of the host material (organic compound 432) T PH : The lowest triplet excited state of the host material (organic compound 432) T PG : The lowest level of the triplet excited state of guest material 431 (phosphorescent material) ·S E : The lowest level of the singlet excited state of an exciplex T E : The lowest level of the triplet excited state of an exciplex

[0276] As shown in Figure 31, exciplexes exist only in excited states, so excitation between exciplexes Molecular diffusion is difficult to occur. E , T E ) is the organic layer of the light-emitting layer 414 The excitation level (SPH , T PH ) than Since the electron density is so low, no energy diffusion occurs from the exciplex to the organic compound 432. In the phosphorescent light-emitting layer (light-emitting layer 414), the exciton diffusion distance of the exciplex is short, so that the phosphorescent light It is possible to maintain the efficiency of the fluorescent layer (light-emitting layer 413). At the interface between the phosphorescent light-emitting layer (light-emitting layer 414) and the phosphorescent light-emitting layer (light-emitting layer 414), an exciplex of the phosphorescent light-emitting layer (light-emitting layer 414) Even if a part of the triplet excitation energy of the body is diffused to the fluorescent light-emitting layer (light-emitting layer 413), The triplet excitation energy of the fluorescent light-emitting layer (light-emitting layer 413) generated by the diffusion is TTA Since light is emitted through the

[0277] As described above, the light-emitting device 450 uses ExTET for the light-emitting layer 414. By using TTA in 13, energy loss is reduced, resulting in high luminous efficiency. As shown in the light-emitting element 450, the light-emitting layer 413 and the light-emitting layer 414 are in contact with each other, the energy loss is reduced and E It is possible to reduce the number of layers of the L layer 400. Therefore, the light emitting device can be manufactured at low cost. It can be said that:

[0278] The light-emitting layer 413 and the light-emitting layer 414 may not be in contact with each other. In this case, the organic compound 432 or the guest material 431 (phosphorescent material) generated in the light-emitting layer 414 ) in the light-emitting layer 413. Preventing energy transfer (especially triplet energy transfer) via the Dexter mechanism to the Therefore, the layer provided between the light-emitting layer 413 and the light-emitting layer 414 has a thickness of about several nm. That would be good.

[0279] The layer provided between the light-emitting layer 413 and the light-emitting layer 414 may be made of a single material. The layer may contain both a hole transporting material and an electron transporting material. In this case, a bipolar material may be used. It refers to a material with a mobility ratio of 100 or less. Also, a hole transport material or an electron transport material Alternatively, at least one of them may be a host of the light-emitting layer 414. The organic compound 432 may be used as the material for the light-emitting element. Furthermore, the hole transport material and the electron transport material are easily transported, and the driving voltage is reduced. The exciplex may be formed by the reaction of the cations ... Specifically, the host material (organic compound 432) or the guest material 431 of the light-emitting layer 414 The excited state of the phosphorescent material is converted into the host material 422 or the guest material 42 This prevents energy transfer to 1 (fluorescent material).

[0280] In the light emitting device 450, the recombination region of the carriers is formed with a certain degree of distribution. Therefore, it is preferable that the light-emitting layer 413 or the light-emitting layer 414 has an appropriate carrier. It is preferable that the guest material 431 (phosphorus) contained in the light-emitting layer 414 has an absorptivity. It is preferable that the optical material has an electron trapping property.

[0281] The light emitted from the light-emitting layer 413 has a peak at a shorter wavelength than the light emitted from the light-emitting layer 414. It is preferable that the light-emitting element has a structure including a phosphorescent material that emits light of a short wavelength. Therefore, by using fluorescent light for short wavelengths, A light-emitting element with little deterioration in luminance can be provided.

[0282] Furthermore, by obtaining light of different wavelengths from the light-emitting layer 413 and the light-emitting layer 414, multicolor The light-emitting element may have different emission peaks in the emission spectrum. Since the emitted light is synthesized, the emission spectrum has at least two maxima. .

[0283] The above structure is also suitable for obtaining white light emission. By making the light from the two fluorescent materials complementary to each other, white light can be emitted.

[0284] In addition, by using a plurality of light-emitting materials with different emission wavelengths in the light-emitting layer 413, the three primary colors can be It is also possible to obtain white light with high color rendering, consisting of four or more luminescent colors. The optical layer 413 is further divided into layers, and each divided layer contains a different luminescent material. You can do that too.

[0285] Next, materials that can be used for the light-emitting layer 413 and the light-emitting layer 414 will be described below. do.

[0286] <Materials that can be used for the light-emitting layer 413> In the light-emitting layer 413, the host material 422 is present in the largest amount by weight, and the guest material 421 The fluorescent material is dispersed in the host material 422. The S1 level of the host material 422 is The S1 level of the host material 422 is higher than the S1 level of the fluorescent material 421. It is preferable that the T1 level is lower than the T1 level of the source material 421 (fluorescent material).

[0287] The host material 422 is preferably an anthracene derivative or a tetracene derivative. These derivatives have high S1 levels and low T1 levels. Nyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H -Carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthracenyl )phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl- 9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDB CzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo [b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10- {4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}antho Helical (abbreviation: FLPPA) and 5,12-diphenyltetraphenyl tetracene, 5,12-bis(biphenyl-2-yl)tetracene, and the like.

[0288] The guest material 421 (fluorescent material) may be a pyrene derivative, an anthracene derivative, a trifluoromethane derivative, or a fluorene derivative. phenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, Dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives Examples of suitable conductors include conductors, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. In particular, pyrene derivatives are preferred because they have a high luminescence quantum yield. Specific examples of pyrene derivatives include: N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H- Fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemF LPAPrn), N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl) Phenyl]-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FLPAP rn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene- 1,6-diamine (abbreviation: 1,6FrAPrn), N,N'-bis(dibenzothiophene) -2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAP rn) etc.

[0289] <Materials that can be used for the light-emitting layer 414> In the light-emitting layer 414, the host material (organic compound 432) is present in the largest amount by weight, and the The host material 431 (phosphorescent material) is dispersed in the host material (organic compound 432). The T1 level of the host material (organic compound 432) in the light-emitting layer 414 is It is preferable that the T1 level is higher than that of 21 (fluorescent material).

[0290] As the host material (organic compound 432), zinc and aluminum metal complexes, as well as oxalic acid sadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives Conductors, dibenzoquinoxaline derivatives, dibenzothiophene derivatives, dibenzofuran derivatives , pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, phenane Other examples include aromatic amines and carbazole derivatives. Examples include:

[0291] Guest material 431 (phosphorescent material) is iridium, rhodium, or platinum-based organic Metal complexes, or metal complexes, among which organic iridium complexes, e.g., iridium The orthometalated complex is preferably a 4H-triazole. Ligand, 1H-triazole ligand, imidazole ligand, pyridine ligand, pyrimidine The metal complexes include a pyrazine ligand, an isoquinoline ligand, and the like. Examples include platinum complexes having porphyrin ligands.

[0292] The organic compound 433 (assist material) can form an exciplex with the organic compound 432. In this case, the emission peak of the exciplex is preferably the triplet MLCT of the phosphorescent material. (Metal to Ligand Charge Transfer) transition absorption band, More specifically, organic compound 432 and organic compound 4 are placed so as to overlap with the absorption band on the longest wavelength side. It is preferable to select a guest material 431 (phosphorescent material) as the luminescent material. However, if a thermally activated material is used instead of a phosphorescent material, the light efficiency can be dramatically improved. Thermally activated delayed fluorescence When using TADF (Triaxially Activated Fiber) materials, the absorption band at the longest wavelength is single. It is preferable that the absorption band is

[0293] The light-emitting material contained in the light-emitting layer 414 is a material capable of converting triplet excitation energy into light. The material capable of converting triplet excitation energy into luminescence is a phosphorescent material. In addition to these, TADF materials are also included. Therefore, regarding the part that says phosphorescent materials, It is acceptable to read it as TADF material. Note that TADF material is a material that can only produce triplet excited states. It is possible to upconvert to a singlet excited state (reverse intersystem crossing) using a small amount of thermal energy. It is a material that efficiently emits light (fluorescence) from the singlet excited state. The condition for efficient delayed fluorescence is that the energies of the triplet and singlet excited levels are The difference is 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. It can be obtained.

[0294] In addition, the light emitting color of the light emitting material contained in the light emitting layer 413 and the light emitting material contained in the light emitting layer 414 There is no limitation, and they may be the same or different. The light emitted from each is mixed and emitted outside the device. For example, if the colors of the two lights are complementary to each other, the light-emitting element will emit white light. In consideration of the reliability of the light-emitting element, the light-emitting layer 413 can emit light. The light emitting material preferably has a peak emission wavelength shorter than that of the light emitting material contained in the light emitting layer 414. It's nice.

[0295] The light-emitting layer 413 and the light-emitting layer 414 can be formed by a deposition method (including a vacuum deposition method), an ink-jet method, or the like. The layer can be formed by a printing method, a coating method, a gravure printing method, or the like.

[0296] Note that the structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. You can be there.

[0297] (Embodiment 3) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described with reference to FIGS. do.

[0298] <Configuration example 1 of light-emitting device> 32(A) is a top view showing the light emitting device 600, and FIG. 32(B) is a diagram showing the light emitting device 600 along the dashed line in FIG. 32(A). The light emitting device 600 is a cross-sectional view taken along the line AB and the dashed line CD. It has a signal line driver circuit portion 601, a scanning line driver circuit portion 603, and a pixel portion 602. The signal line driver circuit portion 601, the scanning line driver circuit portion 603, and the pixel portion 602 are It has the function of controlling the light emission of the element.

[0299] The light emitting device 600 also includes an element substrate 610, a sealing substrate 604, a sealant 605, The device has an area 607 surrounded by a sealing material 605, wiring 608, and an FPC 609. do.

[0300] The lead wiring 608 is connected to the signal line driver circuit portion 601 and the scanning line driver circuit portion 603. This is the wiring for transmitting the input signal, and is connected to the external input terminal FPC609. It receives the FP signal, clock signal, start signal, reset signal, etc. Although only C609 is shown, FPC609 is equipped with a printed wiring board (PWB). It may be attached.

[0301] The signal line driver circuit 601 also includes an N-type transistor 623 and a P-type transistor 6 24 is combined to form a CMOS circuit. The scanning line driving circuit section 603 may be a CMOS circuit, a PMOS circuit, an NMOS circuit, or the like. In this embodiment mode, a driver circuit portion formed on a substrate can be used. Although the light emitting device shown in FIG. 1 has the light emitting element and the pixel on the same surface, this is not necessarily the case. The path section may be formed externally rather than on the substrate.

[0302] The pixel portion 602 includes a switching transistor 611 and a current control transistor. a lower part electrically connected to the drain of the current control transistor 612; A partition wall 614 is formed to cover the edge of the lower electrode 613. The partition wall 614 can be made of a positive photosensitive acrylic resin film.

[0303] In order to improve the covering property, the partition wall 614 may have a curvature at the upper or lower end. For example, the partition wall 614 is made of a positive photosensitive acrylic resin. When a separator is used, only the upper end of the separator 614 has a radius of curvature (0.2 μm or more and 3 μm or less). It is preferable that the partition wall 614 has a curved surface. Either a photosensitive resin or a positive photosensitive resin can be used.

[0304] The structure of the transistors (transistors 611, 612, 623, and 624) is For example, a staggered transistor may be used. There is no particular limitation on the polarity, and a structure having N-type and P-type transistors, and an N-type A structure consisting of only either a P-type transistor or a P-type transistor may be used. There is also no particular limitation on the crystallinity of the semiconductor film used in the transistor. For example, an amorphous semiconductor film or a crystalline semiconductor film can be used. , Group 14 (silicon, gallium, etc.) semiconductors, compound semiconductors (including oxide semiconductors), organic semiconductors For example, a transistor with an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more. The oxide semiconductor is preferably used because the off-state current of the transistor can be reduced. Conductors include In-Ga oxide and In-M-Zn oxide (M is aluminum (Al)). , Gallium (Ga), Yttrium (Y), Zirconium (Zr), Lanthanum (La), Represents cerium (Ce), tin (Sn), hafnium (Hf), or neodymium (Nd) ) etc.

[0305] An EL layer 616 and an upper electrode 617 are formed on the lower electrode 613. The lower electrode 613 functions as an anode, and the upper electrode 617 functions as a cathode. do.

[0306] The EL layer 616 can be formed by a deposition method using a deposition mask, an inkjet method, or a spin coating method. The EL layer 616 can be formed by various methods such as a low-temperature method. The compound may be a molecular compound or a polymer compound (including an oligomer or a dendrimer).

[0307] The lower electrode 613, the EL layer 616, and the upper electrode 617 form a light-emitting element 618. The light emitting element 618 is preferably a light emitting element having the configuration of the first embodiment. Note that in the case where a plurality of light-emitting elements are formed in a pixel portion, the light-emitting element described in Embodiment 1 and The light emitting element may include both light emitting elements having other configurations.

[0308] In addition, by bonding the sealing substrate 604 to the element substrate 610 with the sealing material 605, The light-emitting element is disposed in an area 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. The region 607 is filled with a filler. In addition to being filled with an inert gas (nitrogen, argon, etc.), it can also be used as a sealing material 605. They may also be filled with UV or heat curable resins that can be used for various applications, such as PVC ( Polyvinyl chloride) resin, acrylic resin, polyimide resin, epoxy resin, Silicone resin, PVB (Polyvinyl Butyral) resin, or EVA (Ethylene Vinyl A recess is formed in the sealing substrate, and a desiccant is placed in the recess. By providing this, deterioration due to the influence of moisture can be suppressed, which is a preferable configuration.

[0309] In addition, the optical element 621 is disposed below the sealing substrate 604 so as to overlap the light emitting element 618. In addition, a light-shielding layer 622 is provided below the sealing substrate 604. The optical element and the light-shielding layer 621 and the light-shielding layer 622 are respectively the optical element and the light-shielding layer shown in the first embodiment. The same configuration may be used.

[0310] It is preferable to use epoxy resin or glass frit for the sealing material 605. In addition, it is desirable that these materials be as impermeable to moisture and oxygen as possible. In addition, the material used for the sealing substrate 604 may be a glass substrate, a quartz substrate, or an FRP (Fiber Reinforced Plastic) substrate. Reinforced Plastics), PVF (Polyvinyl Fluoride), Poly A plastic substrate made of ester, acrylic or the like can be used.

[0311] In this manner, a light emitting device having the light emitting element and optical element described in embodiment 1 was obtained. It is possible. <Configuration Example 2 of Light-Emitting Device>

[0312] Next, another example of the light emitting device will be described with reference to FIGS. 33(A), 33(B), and 34. 33A and 33B, and FIG. 34 are cross-sectional views of a light-emitting device according to one embodiment of the present invention. be.

[0313] FIG. 33(A) shows a substrate 1001, an underlying insulating film 1002, a gate insulating film 1003, a gate Electrodes 1006, 1007, 1008, a first interlayer insulating film 1020, a second interlayer insulating film 10 21, peripheral portion 1042, pixel portion 1040, driving circuit portion 1041, lower electrode 10 of light-emitting element 24R, 1024G, 1024B, partition wall 1025, EL layer 1028, upper electrode of light-emitting element 1026, a sealing layer 1029, a sealing substrate 1031, a sealing material 1032, etc. are shown. .

[0314] In addition, in FIG. 33(A), as an example of an optical element, a colored layer (a red colored layer 1034R, A green colored layer 1034G and a blue colored layer 1034B are provided on a transparent substrate 1033. A light-shielding layer 1035 may be further provided. The base material 1033 is aligned and fixed to the substrate 1001. is covered with an overcoat layer 1036. In FIG. 33(A), the colored layer Since the light that passes through the screen is red, green, and blue, images can be displayed using three color pixels.

[0315] In FIG. 33(B), as an example of an optical element, a colored layer (a red colored layer 1034R, a green colored layer The colored layer 1034G and the blue colored layer 1034B are formed between the gate insulating film 1003 and the first interlayer insulating film. In this example, the colored layer is formed between the substrate 1001 and the film 1020. It may be provided between the substrates 1031 .

[0316] In FIG. 34, as an example of an optical element, a colored layer (a red colored layer 1034R, a green colored layer 1034G, blue colored layer 1034B) between the first interlayer insulating film 1020 and the second interlayer insulating film In this example, the colored layer is formed between the substrate 1001 and the sealing substrate 1021. It may be provided between the plates 1031. <Configuration Example 3 of Light-Emitting Device>

[0317] Next, another example of the light emitting device will be described with reference to FIGS. 35(A), 35(B), and 36. 35A, 35B, and 36 are cross-sectional views of a light-emitting device according to one embodiment of the present invention. be.

[0318] In FIG. 35(A), as an example of an optical element, a colored layer (a red colored layer 1034R, a green colored layer The colored layer 1034G, the blue colored layer 1034B, and the yellow colored layer 1034Y are formed on a transparent substrate. The colored layer and the light-shielding layer 1035 may be further provided. The transparent substrate 1033 on which the layers are provided is aligned and fixed to the substrate 1001. The colored layer and the light-shielding layer are covered with an overcoat layer 1036. In this case, the light that passes through the colored layer is red, blue, green, and yellow, so the image is displayed using four color pixels. It can be expressed.

[0319] In FIG. 35(B), as an example of an optical element, a colored layer (a red colored layer 1034R, a green colored layer The colored layer 1034G and the blue colored layer 1034B are formed between the gate insulating film 1003 and the first interlayer insulating film. In this example, the colored layer is formed between the substrate 1001 and the film 1020. It may be provided between the substrates 1031 .

[0320] In FIG. 35(B), the colored layer is formed between the gate insulating film 1003 and the first interlayer insulating film 1004. 36. However, the present invention is not limited to this. A colored layer (red color) is disposed between the first interlayer insulating film 1020 and the second interlayer insulating film 1021. Color layer 1034R, green color layer 1034G, blue color layer 1034B, and yellow color layer 1034Y) may be provided.

[0321] In the light-emitting device described above, the transistor is formed on the substrate 1001 side. The light emitting device has a bottom emission structure, but the sealing substrate 1031 side The light emitting device may have a structure in which light is extracted (top emission type).

[0322] <Configuration Example 4 of Light-Emitting Device> An example of a cross-sectional view of a top-emission type light-emitting device is shown in Fig. 37 and Fig. 38. 33 and 38 are cross-sectional views illustrating a light-emitting device according to one embodiment of the present invention. 10B, the portion 1041, the peripheral portion 1042, etc. are omitted.

[0323] In this case, the substrate 1001 can be a substrate that does not transmit light. Until the connection electrode for connecting to the anode of the optical element is fabricated, it is a bottom emission type light emitting device. Then, a third interlayer insulating film 1037 is formed to cover the electrode 1022. This insulating film may also have a role of planarization. In addition to the same material as the interlayer insulating film 2, various other materials can be used.

[0324] The lower electrodes 1024R, 1024G, and 1024B of the light-emitting element are anodes here, but In addition, in the case of a top emission type light emitting device as shown in FIG. In this case, it is preferable that the lower electrodes 1024R, 1024G, and 1024B serve as reflective electrodes. The configuration of the L layer 1028 can be the same as the configuration of the EL layer in the first embodiment. An upper electrode 1026 is provided on the EL layer 1028. The upper electrode 1026 is semi-transmissive and semi-reflective. As electrodes, between the lower electrodes 1024R, 1024G, 1024B and the upper electrode 1026 It is preferable to use a microcavity structure to increase the light intensity at a specific wavelength. .

[0325] In the top emission structure shown in Figure 37, the colored layers (red colored layer 1034R, green The substrate 1031 is sealed with a colored layer 1034G and a blue colored layer 1034B. The sealing substrate 1031 has a light-shielding layer 1 formed between the pixels. Note that a light-transmitting substrate is preferably used as the sealing substrate 1031. be.

[0326] In addition, in FIG. 37, a plurality of light emitting elements and a colored layer are provided for each of the plurality of light emitting elements. For example, as shown in FIG. 38, a configuration in which a green color is used A red colored layer 1034R and a blue colored layer 1034B are provided, and red and green As shown in FIG. 37, a full color display may be performed using three colors: blue, green, and blue. When a colored layer is provided on each of the light-emitting elements, reflection of external light can be suppressed. On the other hand, as shown in FIG. 38, if the green colored layer is not provided and only the red colored layer, In the case where a blue colored layer is provided, the energy of the light emitted from the green light emitting element is -Since there is little loss, it has the effect of reducing power consumption. <Configuration Example 5 of Light-Emitting Device>

[0327] Another example of a cross-sectional view of a top-emission type light-emitting device is shown in FIGS. 39 and 40. 9 and 40 are cross-sectional views illustrating a light-emitting device of one embodiment of the present invention. The driving circuit section 1041, the peripheral section 1042, etc. shown in FIG. 35 are omitted in this example.

[0328] The lower electrodes 1024Y, 1024R, 1024G, and 1024B of the light-emitting element are anodes. However, it can also be a cathode. Also, as shown in Figure 39, In the case of a device, the lower electrodes 1024Y, 1024R, 1024G, and 1024B are reflective electrodes. The configuration of the EL layer 1028 is preferably the same as that of the EL layer in the first embodiment. An upper electrode 1026 is provided on the EL layer 1028. 1026 is a semi-transmissive / semi-reflective electrode, and the lower electrodes 1024Y, 1024R, 1024G, A microcavity structure is adopted between 1024B and the upper electrode 1026, and a specific wavelength It is preferable to increase the light intensity at

[0329] In the top emission structure shown in Figure 39, the colored layer (red colored layer 1034R, green A colored layer 1034G, a blue colored layer 1034B, and a yellow colored layer 1034Y are provided. The sealing substrate 1031 has a sealing layer between the pixels. A light-shielding layer 1035 may be provided so as to be positioned at the sealing substrate 1031. It is preferable to use a substrate having such a structure.

[0330] In addition, in FIG. 39, a plurality of light emitting elements and colored layers are provided for each of the light emitting elements. For example, as shown in FIG. 40, a configuration in which a yellow color is used The red colored layer 1034R, the green colored layer 1034G, and the blue colored layer 1034R are not provided. 034B may be provided to perform full color display using four colors: red, green, blue, and yellow. As shown in 39, when a light-emitting element and a coloring layer are provided for each of the light-emitting elements, On the other hand, as shown in Figure 40, the yellow color When a red colored layer, a green colored layer, and a blue colored layer are provided, and when a red colored layer, a green colored layer, and a blue colored layer are provided, Since the energy loss of the light emitted from the yellow light-emitting element is small, power consumption can be reduced. This has the following effects.

[0331] Note that the configuration shown in this embodiment may be appropriately combined with other embodiments or other configurations in this embodiment. Combinations are possible.

[0332] (Fourth embodiment) In this embodiment, a display device including a light-emitting device according to one embodiment of the present invention will be described with reference to FIG. )(B) will be used for the explanation.

[0333] Note that FIG. 41A is a block diagram illustrating a display device of one embodiment of the present invention, and FIG. 1(B) is a circuit diagram illustrating a pixel circuit included in a display device of one embodiment of the present invention.

[0334] <Explanation about the display device> The display device shown in FIG. 41A has a region having pixels of a display element (hereinafter referred to as a pixel portion 802). ) and a circuit section ( hereinafter referred to as a drive circuit section 804), and a circuit having a function of protecting the element (hereinafter referred to as a protection circuit 80 6) and a terminal portion 807. Note that the protection circuit 806 is not provided in the configuration. That's fine.

[0335] A part or the whole of the driver circuit portion 804 is formed on the same substrate as the pixel portion 802. This makes it possible to reduce the number of parts and terminals. When a part or all of the driving circuit is not formed on the same substrate as the pixel portion 802, A part or the whole of the path portion 804 is COG or TAB (Tape Automated Bearing). It can be implemented by

[0336] The pixel section 802 is arranged in X rows (X is a natural number of 2 or more) and Y columns (Y is a natural number of 2 or more). The display device has a circuit for driving a plurality of display elements (hereinafter referred to as pixel circuit 801), The path portion 804 is a circuit for outputting a signal (scanning signal) for selecting a pixel (hereinafter referred to as a scanning line driving circuit 804a), for supplying signals (data signals) for driving the display elements of the pixels. The signal line driver circuit 804b includes a driver circuit such as the circuit (hereinafter referred to as a signal line driver circuit 804b).

[0337] The scanning line driver circuit 804a includes a shift register and the like. A signal for driving the shift register is inputted through the terminal portion 807, and a signal is outputted. For example, a start pulse signal, a clock signal, etc. are input to the scanning line driver circuit 804a. The scanning line driving circuit 804a is connected to the wiring to which the scanning signal is applied (hereinafter referred to as the wiring). The scanning lines GL_1 to GL_X are connected to the gate electrode GL_1. A plurality of driving circuits 804a are provided, and the scanning lines GL_1 to GL_3 are driven by the plurality of scanning line driving circuits 804a. Alternatively, the scanning line driving circuit 804a may control the GL_X by dividing it. However, the present invention is not limited to this, and the scanning line driving circuit 80 4a may also provide other signals.

[0338] The signal line driver circuit 804b includes a shift register and the like. Through the terminal portion 807, signals for driving the shift register as well as the source of the data signal are transmitted. The signal line driver circuit 804b receives the image signal and drives the pixel circuit The signal line driver circuit 804b has a function of generating a data signal to be written to the signal line driver circuit 804b. A data signal is generated in accordance with a pulse signal obtained by inputting a start pulse, a clock signal, etc. The signal line driver circuit 804b has a function of controlling the output of a signal. The data lines DL_1 to DL_Y are connected to the data lines DL_2 through DL_Y. Alternatively, the signal line driver circuit 804b may have a function of supplying an initialization signal. However, the present invention is not limited to this, and the signal line driver circuit 804b may also supply other signals. It is possible.

[0339] The signal line driver circuit 804b is configured using, for example, a plurality of analog switches. The signal line driver circuit 804b sequentially turns on a plurality of analog switches, The image signal can be time-divided and output as a data signal. The signal line driver circuit 804b may be configured using the same.

[0340] Each of the plurality of pixel circuits 801 is connected to one of the plurality of scanning lines GL to which a scanning signal is applied. A pulse signal is input via the data line DL, and a data signal is given via one of the data lines DL. Each of the pixel circuits 801 receives a data signal via a scanning line driving circuit. 804a controls the writing and holding of data of the data signal. The second pixel circuit 801 is connected to the scanning line driving circuit GL_m (m is a natural number equal to or less than X) via the scanning line GL_m. A pulse signal is input from 804a, and the potential of the data line DL_n ( A data signal is input from the signal line driver circuit 804b via the signal line driver circuit 804b (n is a natural number equal to or less than Y).

[0341] The protection circuit 806 shown in FIG. 41(A) is, for example, a protection circuit including a scanning line driving circuit 804a and a pixel circuit 804b. 01. Alternatively, the protection circuit 806 is connected to the scanning line GL, which is the wiring between the signal line driver The data line DL is connected between the circuit 804b and the pixel circuit 801. The protection circuit 806 can be connected to the wiring between the scanning line driving circuit 804a and the terminal portion 807. Alternatively, the protection circuit 806 may be formed on the wiring between the signal line driver circuit 804b and the terminal portion 807. The terminal portion 807 can be connected to a power supply and a line from an external circuit to the display device. This refers to the part where terminals for inputting control signals and image signals are provided.

[0342] When a potential outside a certain range is applied to the wiring to which the protection circuit 806 is connected, the protection circuit 806 This is a circuit that brings one wire into electrical continuity with another wire.

[0343] As shown in FIG. 41A, a pixel section 802 and a driver circuit section 804 are provided with a protection circuit 80. 6, ESD (Electro Static Discharge: This can improve the resistance of the display device to overcurrents caused by electrostatic discharges and the like. However, the configuration of the protection circuit 806 is not limited to this. For example, A configuration in which a protection circuit 806 is connected, or a configuration in which the protection circuit 806 is connected to the signal line driver circuit 804b Alternatively, a configuration in which a protection circuit 806 is connected to the terminal portion 807 may be used. It can also be done as follows.

[0344] In FIG. 41A, the scanning line driver circuit 804a and the signal line driver circuit 804b Therefore, although an example in which the driver circuit portion 804 is formed is shown, the present invention is not limited to this configuration. For example, only the scanning line driver circuit 804a is formed, and a signal line driver circuit prepared separately is formed. A substrate (for example, a drive circuit board formed of a single crystal semiconductor film or a polycrystalline semiconductor film) is mounted. It may also be configured as follows.

[0345] <Pixel circuit configuration example> The plurality of pixel circuits 801 shown in FIG. 41(A) may have the configuration shown in FIG. 41(B), for example. It is possible.

[0346] The pixel circuit 801 shown in FIG. 41B includes transistors 852 and 854 and a capacitor 86 2 and a light-emitting element 872.

[0347] One of the source electrode and the drain electrode of the transistor 852 is supplied with a data signal. The transistor 85 is electrically connected to a wiring (hereinafter referred to as a signal line DL_n). The gate electrode 2 is electrically connected to the wiring to which the gate signal is given (hereinafter referred to as the scanning line GL_m). are connected to the network.

[0348] The transistor 852 has a function of controlling writing of data signals.

[0349] One of the pair of electrodes of the capacitor 862 is connected to a wiring to which a potential is applied (hereinafter, a potential supply line VL _a), and the other is electrically connected to the source electrode and drain electrode of transistor 852. The second electrode is electrically connected to the other of the first and second electrodes.

[0350] The capacitor 862 functions as a storage capacitor for holding written data.

[0351] One of the source electrode and the drain electrode of the transistor 854 is connected to the potential supply line VL_a. Furthermore, the gate electrode of transistor 854 is electrically connected to the It is electrically connected to the other of the source electrode and the drain electrode.

[0352] One of the anode and cathode of the light emitting element 872 is electrically connected to the potential supply line VL_b. The other is electrically connected to the other of the source electrode and drain electrode of the transistor 854. will be done.

[0353] The light-emitting element 872 can be the light-emitting element described in Embodiment 1.

[0354] A high power supply potential VDD is applied to one of the potential supply lines VL_a and VL_b. and the other is supplied with a low power supply potential VSS.

[0355] In a display device having the pixel circuit 801 of FIG. 41(B), for example, The scanning line driving circuit 804a sequentially selects the pixel circuits 801 in each row, and turns on the transistors 852. The data signal is written by turning it on.

[0356] The pixel circuit 801 in which data has been written is turned off by turning off the transistor 852. Furthermore, the potential of the transistor 854 changes depending on the potential of the written data signal. The amount of current flowing between the source electrode and the drain electrode is controlled, and the light emitting element 872 The light is emitted at a brightness that corresponds to the flow rate. By repeating this process row by row, an image can be displayed.

[0357] For example, in this specification, an active matrix type having active elements in pixels, or Alternatively, a passive matrix system in which pixels do not have active elements can be used.

[0358] In the active matrix system, the active element (active element, nonlinear element) is a transistor. By using not only transistors but also various active elements (active elements, nonlinear elements), For example, MIM (Metal Insulator Metal) or T It is also possible to use FD (Thin Film Diode) and other elements. Since the number of manufacturing steps is small, it is possible to reduce manufacturing costs and improve yields. Alternatively, these elements can improve the aperture ratio due to their small size. This makes it possible to achieve low power consumption and high brightness.

[0359] Other than the active matrix type, active elements (active elements, nonlinear elements) It is also possible to use a passive matrix type that does not use active elements (active elements). Since it does not use any nonlinear elements, there are fewer manufacturing steps, which reduces manufacturing costs and improves yield. Alternatively, active elements (active elements, non-linear elements) can be used. Since the aperture ratio is not increased, it is possible to achieve low power consumption or high brightness. This can be done.

[0360] The structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. can be done.

[0361] (Embodiment 5) In this embodiment, a display module and an electronic device including a light-emitting device according to one embodiment of the present invention will be described. This will be explained with reference to FIGS. 42 and 43.

[0362] <Explanation about the display module> The display module 8000 shown in FIG. 42 includes an upper cover 8001 and a lower cover 8002. Between them, touch panel 8004 connected to FPC8003 and A display panel 8006, a frame 8009, a printed circuit board 8010, and a battery 8011 are mounted on the display panel 8006. Has.

[0363] The light-emitting device of one embodiment of the present invention can be used for the display panel 8006, for example.

[0364] The upper cover 8001 and the lower cover 8002 are connected to the touch panel 8004 and the display panel The shape and dimensions can be changed as needed to fit the size of the 8006.

[0365] The touch panel 8004 is a resistive or capacitive touch panel. The display panel 8006 can be used by overlapping it with the opposing substrate (sealing substrate). It is also possible to provide the display panel 8 with a touch panel function. It is also possible to provide an optical sensor in each pixel of 006 to make it an optical touch panel.

[0366] The frame 8009 has a function of protecting the display panel 8006 and also a function of preventing the movement of the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the operation of the The frame 8009 may also function as a heat sink.

[0367] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. This can be omitted if a commercial power source is used.

[0368] In addition, the display module 8000 includes components such as a polarizing plate, a retardation plate, and a prism sheet. It may also be provided in addition.

[0369] <Electronic device instructions> 43(A) to 43(G) are diagrams showing electronic devices. These electronic devices are housed in a housing. A body 9000, a display unit 9001, a speaker 9003, operation keys 9005 (power switch, includes an operation switch), a connection terminal 9006, a sensor 9007 (force, displacement, position, speed, Acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electricity Measures field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared It may have a microphone 9008, etc.

[0370] The electronic devices shown in FIGS. 43A to 43G can have various functions. For example, functions to display various information (still images, videos, text images, etc.) on the display, Sensor function, calendar, date or time display function, various software ( It has the function of controlling processing by using a program, wireless communication function, and various functions using wireless communication function. Functions for connecting to computer networks, transmitting various data using wireless communication functions, or receiving the program or data recorded on the recording medium, and It is possible to have a function to display the information on the display unit. The functions that the electronic device shown in the figure can have are not limited to these, and it may have various functions. Although not shown in FIGS. 43(A) to 43(G), the electronic device may include: The electronic device may have a plurality of display units. The function to take pictures, take videos, and save the images to a recording medium (external or built-in to the camera) ) and a function to display the captured image on the display unit.

[0371] The electronic devices shown in FIGS. 43(A) to 43(G) will be described in detail below.

[0372] FIG. 43A is a perspective view showing a mobile information terminal 9100. The display portion 9001 is flexible. The display unit 9001 can be incorporated along the screen. It is equipped with a touch panel, and can be operated by touching the screen with a finger or a stylus. By touching the icon displayed on the display 9001, the application can be started. can.

[0373] 43(B) is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 is For example, the device has one or more functions selected from a telephone, a notebook, an information viewing device, etc. Specifically, it can be used as a smartphone. Although the speaker 9003, the connection terminal 9006, the sensor 9007, etc. are omitted in the illustration, It can be installed in the same position as the mobile information terminal 9100 shown in 43(A). The information terminal 9101 can display text and image information on multiple surfaces. For example, Three operation buttons 9050 (also called operation icons or simply icons) are displayed on the display unit 900. 9051 shown in a dashed rectangle can be displayed on one side of the display unit 90. 01. An example of the information 9051 is an e-mail A display that notifies you of incoming calls, SNS (social networking services), etc. , subject of email or SNS, sender name of email or SNS, date and time, time, The remaining battery level, antenna reception strength, etc. Or, information 9051 is displayed. In place of the information 9051, an operation button 9050 or the like may be displayed.

[0374] 43(C) is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 is , and has the function of displaying information on three or more surfaces of the display unit 9001. An example is shown in which information 9053 and information 9054 are displayed on different sides. The user of the portable information terminal 9102 stores the portable information terminal 9102 in the breast pocket of his / her clothes. In this state, the display (information 9053 in this case) can be confirmed. The telephone number or name of the caller is displayed in a position that can be observed from above the mobile information terminal 9102. The user can view the display without taking the mobile information terminal 9102 out of his pocket. You can check the call and decide whether to accept it or not.

[0375] 43(D) is a perspective view showing a wristwatch-type portable information terminal 9200. The 9200 is suitable for mobile phone calls, e-mail, document browsing and writing, music playback, and internet communications. It is possible to run various applications such as computer games. The display surface of the display unit 9001 is curved, and the display is performed along the curved display surface. In addition, the portable information terminal 9200 can perform short-distance wireless communication according to a communication standard. For example, by communicating with a wireless headset, handset The mobile information terminal 9200 also has a connection terminal 9006. It has a connector and can directly exchange data with other information terminals. Charging can also be performed via the connection terminal 9006. It may also be possible to supply power wirelessly without going through 6.

[0376] 43(E), (F), and (G) are perspective views showing a foldable portable information terminal 9201. FIG. 43(E) is a perspective view of the portable information terminal 9201 in an unfolded state, and FIG. (F) shows the mobile information terminal 9201 being changed from one of the unfolded state and the folded state to the other. 43(G) is a perspective view of the portable information terminal 9201 in a folded state. The portable information terminal 9201 is highly portable when folded, and is easily portable when unfolded. When the display is turned on, the seamless, wide display area provides excellent visibility of the display. The display unit 9001 of the display device 01 is made up of three housings 9000 connected by hinges 9055. The two housings 9000 are supported by the hinge 9055. This allows the portable information terminal 9201 to be reversibly transformed from an unfolded state to a folded state. For example, the portable information terminal 9201 can be bent with a radius of curvature of 1 mm or more and 150 mm or less. It can be done.

[0377] The electronic device described in this embodiment has a display unit for displaying some information. However, the light-emitting device of one embodiment of the present invention is not limited to electronic devices that do not have a display portion. In addition, the present invention can be applied to the display unit of the electronic device described in this embodiment. In the case of a display device, it is possible to provide a display along a curved display surface, or a display device that can be folded. Although the configuration of the display unit is exemplified as being foldable, the present invention is not limited to this. The display may be displayed on the display unit.

[0378] The structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. can be done.

[0379] (Sixth embodiment) In this embodiment, an example of a lighting device to which a light-emitting device according to one embodiment of the present invention is applied will be described. This will be explained using Figure 44.

[0380] FIG. 44 shows an example in which the light emitting device is used as an indoor lighting device 8501. Since the surface area can be increased, a large-area lighting device can be formed. By using a housing having the above structure, a lighting device 8502 having a curved light-emitting area can be formed. The light-emitting element included in the light-emitting device shown in this embodiment mode is a thin film, and the design of the housing Therefore, it is possible to create lighting devices with a wide variety of elaborate designs. Furthermore, a large lighting device 8503 may be provided on the wall of the room. A touch sensor is provided on 01, 8502, and 8503 to turn the power of the light-emitting device on or off. may be performed.

[0381] In addition, by using a light emitting device on the surface of a table, it is possible to make a lighting device that functions as a table. The lighting device 8504 can be used as a lighting device. This allows the lighting device to function as furniture.

[0382] As described above, various lighting devices using the light-emitting device can be obtained. This device is included in one aspect of the present invention.

[0383] The structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. You can be there.

[0384] (Embodiment 7) In this embodiment, a light-emitting element according to one embodiment of the present invention or a light-emitting device according to one embodiment of the present invention will be described. An electronic device equipped with an input device will be described with reference to FIGS.

[0385] <Touch panel explanation> 45(A) and (B) are perspective views of the touch panel 2000. In B), representative components of touch panel 2000 are shown for clarity.

[0386] The touch panel 2000 includes a display unit 2501 and a touch sensor 2595 (see FIG. 45 (B)). The touch panel 2000 also includes a substrate 2510, a substrate 2570, and a substrate 2590. Note that the substrate 2510, the substrate 2570, and the substrate 2590 may all be It has flexibility.

[0387] The display unit 2501 has a plurality of pixels on a substrate 2510 and a display device that can supply signals to the pixels. The plurality of wirings 2511 extend to the outer periphery of the substrate 2510. The terminal 2519 is made of FPC2509( 1). The plurality of wirings 2511 are electrically connected to the signal line driver circuit 2503s (1 ) can be fed to multiple pixels.

[0388] The substrate 2590 includes a touch sensor 2595 and a contact hole 2596 electrically connected to the touch sensor 2595. The plurality of wirings 2598 are laid out on the periphery of the substrate 2590. The terminal is electrically connected to the FPC2509(2). In FIG. 45(B), for clarity, the back side of the substrate 2590 (substrate 251 The electrodes and wiring of the touch sensor 2595 provided on the surface opposite to the touch panel 2590 are shown by solid lines. do.

[0389] As the touch sensor 2595, for example, a capacitance type touch sensor can be applied. The capacitive type includes a surface type electrostatic capacitance type and a projected type electrostatic capacitance type.

[0390] The projected capacitive type is mainly divided into self-capacitance type and mutual capacitance type, which differ mainly in the driving method. The mutual capacitance method is preferable because it allows simultaneous multi-point detection.

[0391] First, when applying a projected capacitive touch sensor, use Figure 45(B). and explain.

[0392] In addition, various sensors that can detect the proximity or contact of a detection target such as a finger are applied. It is possible.

[0393] The projected capacitive touch sensor 2595 has an electrode 2591 and an electrode 2592. The electrode 2591 is electrically connected to one of the plurality of wirings 2598, and the electrode 2592 is It is electrically connected to any other of the plurality of wirings 2598.

[0394] As shown in FIGS. 45(A) and 45(B), the electrodes 2592 are made of a plurality of electrodes repeatedly arranged in one direction. The shape is such that the quadrilaterals are connected at their corners.

[0395] The electrode 2591 is quadrilateral and is repeated in a direction intersecting the direction in which the electrode 2592 extends. are placed.

[0396] The wiring 2594 is electrically connected to the two electrodes 2591 that sandwich the electrode 2592. In this case, it is preferable that the area of ​​the intersection between the electrode 2592 and the wiring 2594 is as small as possible. This reduces the area where no electrodes are provided, reducing variations in transmittance. As a result, the variation in brightness of light passing through the touch sensor 2595 can be reduced. can be done.

[0397] The shapes of the electrodes 2591 and 2592 are not limited to this, and may take various shapes. For example, multiple electrodes 2591 are arranged with as few gaps as possible, and A plurality of electrodes 2592 are provided at intervals so that there is an area where they do not overlap with the electrodes 2591. In this case, a contact between two adjacent electrodes 2592 may be provided. Providing an insulated dummy electrode is preferable because it can reduce the area of ​​the region with different transmittance. .

[0398] Next, the touch panel 2000 will be described in detail with reference to FIG. 45(A) along the dashed line X1-X2.

[0399] The touch sensor 2595 includes electrodes 2591 and 2592 arranged in a staggered pattern on a substrate 2590. 2592, an insulating layer 2593 covering the electrodes 2591 and 2592, and the adjacent electrodes 25 91 and a wiring 2594 that electrically connects them.

[0400] An adhesive layer 2597 is provided below the wiring 2594. The substrate 2590 is attached to the substrate 2570 so that the touch sensor 2595 overlaps the display unit 2501. It is combined.

[0401] The electrode 2591 and the electrode 2592 are formed using a light-transmitting conductive material. Examples of conductive materials having the formula include indium oxide, indium tin oxide, and indium zinc oxide. Conductive oxides such as zinc oxide, zinc oxide, and zinc oxide doped with gallium can be used. A film containing graphene may also be used. The film containing graphene may be, for example, a film-like The graphene oxide film can be formed by reducing the graphene oxide film formed on the substrate. For example, a method of applying heat can be mentioned.

[0402] For example, a film of a light-transmitting conductive material is formed on the substrate 2590 by sputtering. After that, various patterning techniques such as photolithography are used to remove unnecessary parts. , an electrode 2591 and an electrode 2592 can be formed.

[0403] The insulating layer 2593 may be made of a resin such as acrylic or epoxy. In addition to resins with siloxane bonds, silicon oxide, silicon oxynitride, aluminum oxide, Inorganic insulating materials such as rubber can also be used.

[0404] An opening reaching the electrode 2591 is provided in the insulating layer 2593, and a wiring 2594 is adjacent to the opening. The transparent conductive material is used to increase the aperture ratio of the touch panel. Therefore, it can be suitably used for the wiring 2594. A material having higher conductivity than the electrode 2592 is preferable for the wiring 2594 because it can reduce electrical resistance. It can be used appropriately.

[0405] The electrodes 2592 extend in one direction, and a plurality of electrodes 2592 are provided in a stripe pattern. Moreover, the wiring 2594 is provided so as to intersect with the electrode 2592.

[0406] A pair of electrodes 2591 is provided with one electrode 2592 sandwiched therebetween. A pair of electrodes 2591 are electrically connected.

[0407] The plurality of electrodes 2591 are arranged in a direction that is not necessarily perpendicular to one electrode 2592. The angle does not have to be 0 degrees, and may be greater than 0 degrees but less than 90 degrees.

[0408] The wiring 2598 is electrically connected to the electrode 2591 or the electrode 2592. A part of 2598 functions as a terminal. The wiring 2598 is made of, for example, aluminum. , gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt Metallic materials such as copper or palladium, or alloy materials containing such metallic materials can be used. do.

[0409] An insulating layer covering the insulating layer 2593 and the wiring 2594 is provided, and the touch sensor 2595 may be protected.

[0410] The connection layer 2599 electrically connects the wiring 2598 and the FPC 2509(2). .

[0411] The connection layer 2599 may be made of various anisotropic conductive films (ACFs). Conductive Film) and Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0412] The adhesive layer 2597 is transparent. For example, a thermosetting resin or an ultraviolet curing resin is used. Specifically, acrylic resin, urethane resin, epoxy resin, or silicone resin can be used. A hydroxyl group resin can be used.

[0413] The display unit 2501 has a plurality of pixels arranged in a matrix. and a pixel circuit that drives the display element.

[0414] In the following description, when an organic EL element that emits white light is applied to a display element, However, the display element is not limited to this. For example, a display element that emits light for each adjacent pixel To achieve different light colors, organic EL elements with different luminescent colors may be used.

[0415] The substrate 2510 and the substrate 2570 may have a water vapor permeability of, for example, 1×10 -5 g· m -2 ·day -1 Less than 1 × 10 -6 g·m -2 ·day -1 It is possible that A flexible material can be preferably used. Alternatively, the thermal expansion coefficient of the substrate 2510 and the It is preferable to use a material whose coefficient of thermal expansion is approximately equal to that of the plate 2570. For example, is 1×10 -3 / K or less, preferably 5×10 -5 / K or less, more preferably 1×10 - 5 A material having a solubility of 0.1 kJ / K or less can be suitably used.

[0416] Also, it is preferable that the sealing layer 2560 has a refractive index higher than that of air. As shown in the figure, when light is extracted to the sealing layer 2560 side, the sealing layer 2560 is an optical bonding layer. It can serve as both.

[0417] The display unit 2501 also includes a pixel 2502R. It has module 2580R.

[0418] The pixel 2502R includes a light emitting element 2550R and a power supply for the light emitting element 2550R. The transistor 2502t is a transistor that can The light emitting module 2580R includes a light emitting element 2550R and It has a colored layer 2567R.

[0419] The light emitting element 2550R includes a lower electrode, an upper electrode, and an EL layer between the lower electrode and the upper electrode. It has.

[0420] Furthermore, when the sealing layer 2560 is provided on the side from which light is extracted, the sealing layer 2560 It contacts the optical element 2550R and the colored layer 2567R.

[0421] The colored layer 2567R is located so as to overlap the light emitting element 2550R. A part of the light emitted by 2550R passes through the colored layer 2567R and is emitted in the direction of the arrow shown in the figure. The light is emitted to the outside of the optical module 2580R.

[0422] In addition, the display unit 2501 is provided with a light-shielding layer 2567BM in the light-emitting direction. The optical layer 2567BM is provided so as to surround the colored layer 2567R.

[0423] The display unit 2501 also has an anti-reflection layer 2567p at a position overlapping the pixel. The stop layer 2567p may be, for example, a circular polarizer.

[0424] The display portion 2501 is provided with an insulating layer 2521. The insulating layer 2521 is The insulating layer 2521 is used to flatten the unevenness caused by the pixel circuit. The insulating layer 2521 may have a function of suppressing diffusion of impurities. This makes it possible to prevent the deterioration of reliability of the transistor 2502t etc. due to the diffusion of impurities. do.

[0425] The light emitting element 2550R is formed above the insulating layer 2521. The lower electrode of 550R is provided with a partition wall 2528 that overlaps the edge of the lower electrode. A spacer for controlling the distance between the substrate 2510 and the substrate 2570 is provided on the partition wall 2528. It may be formed.

[0426] The scanning line driver circuit 2503g(1) includes a transistor 2503t and a capacitor 2503c. The driver circuit and the pixel circuit can be formed on the same substrate in the same process. do.

[0427] Moreover, wiring 2511 capable of supplying signals is provided on the substrate 2510 . A terminal 2519 is provided on the wiring 2511. The terminal 2519 is also provided with an FP FPC2509(1) is electrically connected to the pixel signal and It has the function of supplying signals such as synchronization signals. A print wiring board (PWB) may be attached.

[0428] Transistors with various structures can be used in the display portion 2501. In FIG. 46(A), a bottom gate transistor is used, for example. The transistor 2502t and the transistor 2503t shown in FIG. In the above case, a semiconductor layer containing an oxide semiconductor can be used as a channel region. The transistors 2502t and 2503t contain amorphous silicon. The semiconductor layer can be used as a channel region. The transistor 2503t is made of polycrystalline silicon that has been crystallized by processes such as laser annealing. A semiconductor layer containing silicon can be used as the channel region.

[0429] 4 shows a configuration in which a top-gate transistor is applied to the display portion 2501. 6(B).

[0430] In the case of a top-gate transistor, it can be used for a bottom-gate transistor. In addition to the same structure as the semiconductor layer that can be formed, it can also be transferred from polycrystalline silicon or single crystal silicon substrates. A semiconductor layer including a single crystal silicon film or the like may be used as the channel region.

[0431] Next, a touch panel having a different configuration from that shown in FIG. 46 will be described with reference to FIG. 47. do.

[0432] FIG. 47 is a cross-sectional view of the touch panel 2001. The touch panel 2001 shown in FIG. 46 and the touch sensor 259 for the display unit 2501. The position of 5 is different. Here, we will explain the different configuration in detail and use the same configuration. The explanation of the touch panel 2000 will be used for the parts that can be done.

[0433] The colored layer 2567R is located so as to overlap the light emitting element 2550R. The light-emitting element 2550R emits light toward the side where the transistor 2502t is provided. As a result, a part of the light emitted by the light emitting element 2550R passes through the colored layer 2567R, The light is emitted to the outside of light emitting module 2580R in the direction of the arrow shown in the figure.

[0434] The display unit 2501 has a light-shielding layer 2567BM in the light-emitting direction. The BM is provided so as to surround the colored layer 2567R.

[0435] The touch sensor 2595 is provided on the substrate 2510 side of the display unit 2501 (see FIG. 47). (See (A)).

[0436] The adhesive layer 2597 is between the substrate 2510 and the substrate 2590, and is connected to the display unit 2501 and the touch panel. Attach the sensor 2595.

[0437] Transistors with various structures can be used in the display portion 2501. 47A illustrates a case where a bottom gate transistor is used. In addition, FIG. 47(B) shows a case where a top-gate transistor is applied. Examples are given below.

[0438] <Explanation of how to drive the touch panel> Next, an example of a method for driving a touch panel will be described with reference to FIG.

[0439] FIG. 48(A) is a block diagram showing the configuration of a mutual capacitance type touch sensor. In (A), a pulse voltage output circuit 2601 and a current detection circuit 2602 are shown. In FIG. 48(A), the electrodes 2621 to which the pulse voltage is applied are designated as X1-X6, and the change in current The electrodes 2622 for detecting the change are shown as Y1-Y6, each with six wires. In addition, FIG. 48(A) shows a capacitance formed by overlapping an electrode 2621 and an electrode 2622. 2603. The electrodes 2621 and 2622 are interchangeable in function. It may be possible.

[0440] The pulse voltage output circuit 2601 is a circuit for applying pulses to the X1-X6 wirings in sequence. When a pulse voltage is applied to the wiring of X1-X6, the voltage that forms the capacitance 2603 An electric field is generated between the electrodes 2621 and 2622. The electric field generated between the electrodes is By using the change in the mutual capacitance of the capacitance 2603, the proximity of the object to be detected or A contact can be detected.

[0441] The current detection circuit 2602 detects the change in the mutual capacitance of the capacitor 2603, and detects the change in the wiring of Y1 to Y6. This is a circuit for detecting changes in current in the wire. The wires Y1-Y6 detect changes in the proximity of the object to be detected. If there is no contact, the detected current value will not change, but the proximity of the object to be detected, or When the mutual capacitance decreases due to contact, the current value decreases. The detection may be performed using an integrating circuit or the like.

[0442] Next, FIG. 48(B) shows the input voltage of the mutual capacitance type touch sensor shown in FIG. 48(A). The timing chart of the output waveform is shown in Figure 48(B). In FIG. 48(B), when the object to be detected is not detected ( Two cases are shown: when the object is detected (touched) and when the object is not detected (touched). For the wiring of Y1-Y6, the waveform is shown as a voltage value corresponding to the detected current value. There are.

[0443] A pulse voltage is applied to the wires X1-X6 in order, and the The waveform in the Y6 wiring changes. When there is no proximity or contact of the object to be detected, X1-X6 The waveforms of Y1-Y6 change uniformly according to the change in the voltage of the wiring. Or, at the contact point, the current value decreases, and the corresponding voltage waveform also changes. do.

[0444] In this way, by detecting the change in mutual capacitance, the proximity or contact of the object to be detected can be detected. It is possible.

[0445] <Sensor circuit explanation> In addition, in FIG. 48(A), only a capacitor 2603 is provided at the intersection of the wiring as a touch sensor. The configuration of a passive matrix touch sensor has been shown, but it is not limited to a transistor and a capacitor. An active matrix touch sensor may also be used. 1 shows an example of one sensor circuit included in the touch sensor.

[0446] The sensor circuit shown in FIG. 49 includes a capacitor 2603, a transistor 2611, and a transistor 2612 and a transistor 2613.

[0447] A signal G2 is applied to the gate of the transistor 2613, and a signal G3 is applied to either the source or the drain of the transistor 2613. A voltage VRES is applied, and the other is connected to one electrode of the capacitor 2603 and the transistor 2611 The transistor 2611 has a source and a drain electrically connected to the gate of the transistor 2611. The source or drain of the transistor 2612 is electrically connected to the voltage VS The transistor 2612 receives a signal G2 at its gate and a signal S at its source or The other electrode of the drain is electrically connected to the wiring ML. The other electrode of the capacitor 2603 is connected to a voltage VS S is given.

[0448] Next, the operation of the sensor circuit shown in Figure 49 will be described. First, as the signal G2, When a potential that turns on the transistor 2613 is applied, the gate of the transistor 2611 A potential corresponding to the voltage VRES is applied to the node n to which the signal G2 is connected. By applying a potential that turns off the transistor 2613, the potential of the node n is maintained. It will be held.

[0449] Next, the mutual capacitance of the capacitor 2603 changes when a detection object such as a finger approaches or touches the sensor. As a result, the potential of the node n changes from VRES.

[0450] The read operation applies a potential to the signal G1 that turns on the transistor 2612. The current flowing through the transistor 2611 in accordance with the potential of the node n, that is, the current flowing through the wiring ML By detecting this current, the proximity or contact of the object to be detected can be detected. This can be done.

[0451] The transistors 2611, 2612, and 2613 include: It is preferable to use an oxide semiconductor layer as the semiconductor layer in which the channel region is formed. By applying such a transistor to the transistor 2613, the potential of the node n This allows the voltage to be held for a long period of time, and the operation of re-supplying VRES to node n (restart) is performed. This can reduce the frequency of refresh operations.

[0452] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Example]

[0453] In this example, light-emitting elements (light-emitting elements 1 to 6) which are embodiments of the present invention and light-emitting elements A cross section of the light emitting device fabricated in this example (Comparative Light Emitting Device 7) is shown. A schematic diagram is shown in FIG. 50, and the details of the device structure are shown in Tables 3 to 6. As the compound, the material shown in Embodiment 1 and the compound shown below were used.

[0454] [ka]

[0455] [Table 3]

[0456] [Table 4]

[0457] [Table 5]

[0458] [Table 6]

[0459] <1-1. Fabrication of Light-Emitting Device 1> An APC film was formed on a substrate 502 to a thickness of 100 nm as a lower electrode 504. Ta.

[0460] Next, an ITSO film was deposited on the lower electrode 504 to a thickness of 80 nm as a transparent conductive film 506. The electrode area of ​​the lower electrode 504 was 4 mm 2 (2mm x 2mm ) was decided.

[0461] Next, a hole injection layer 531 was formed on the transparent conductive film 506 by weight deposition of PCPPn and MoO3. The ratio (PCPPn:MoO3) was set to 2:1 and the thickness was set to 27.5 nm. Co-evaporation was carried out.

[0462] Next, a hole transport layer 532 was formed on the hole injection layer 531 by depositing PCPPn to a thickness of 10 nm. The vapor deposition was carried out as follows.

[0463] Next, a light-emitting layer 508 containing cgDBCzPA and N,N'-bis(2-methyl-N-methyl-N,N'-bis(2 ... (dibenzofuran-4-yl)-N,N'-diphenyl-pyrene-1,6-diamine ( 1,6FrAPrn-II) and the weight ratio (cgDBCzPA:1,6FrAPrn-II The co-deposition was carried out so that the ratio of the ZnO and the ZnO was 1:0.05 and the thickness was 25 nm. In layer 508, cgDBCzPA is the host material and 1,6FrAPrn-II is It is a fluorescent material (guest material).

[0464] Next, on the light-emitting layer 508, an electron transport layer 533 containing cgDBCzPA and Bphen were deposited in this order to thicknesses of 5 nm and 15 nm, respectively.

[0465] Next, as the electron injection layer 534, Li2O and CuPc were deposited to a thickness of 0.1 nm. The film was evaporated to a thickness of 2 nm.

[0466] Next, DBT3P-II and MoO3 were used as a charge generation layer 516 that also served as a hole injection layer. The weight ratio (DBT3P-II:MoO3) was set to 2:1 and the thickness was set to 12.5 nm. Co-evaporation was carried out so that

[0467] Next, as a hole transport layer 536, BPAFLP was evaporated to a thickness of 20 nm. Ta.

[0468] Next, on the hole transport layer 536, 2mDBTBPDBq-II and P CBBiF and Ir(mpmppm)2(acac) in a weight ratio of (2mDBTBPDB q-II:PCBBiF:Ir(mpmppm)2(acac)) is 0.8:0.2:0 The luminescent layer 510 was co-deposited to a thickness of 40 nm. In this case, 2mDBTBPDBq-II is the host material and PCBBiF is the assist material. and Ir(mpmppm)2(acac) is the guest material.

[0469] Next, on the light-emitting layer 510, 2mDBTBPDBq-II and B Phen and phen were deposited successively to thicknesses of 15 nm and 20 nm, respectively.

[0470] Next, LiF is formed as an electron injection layer 538 to a thickness of 1 nm, and then The electrode 520 is made of an Ag-Mg alloy film and an ITO film, each having a thickness of 15 nm and 7 mm. The Ag and Mg alloy film was formed so that the volume ratio of Ag:Mg ) was evaporated to a ratio of 0.5:0.05.

[0471] By the above steps, the structure formed on the substrate 502 was fabricated. In the process, the resistance heating method was used for all the depositions. It was formed by the tarring method.

[0472] As shown in Table 3, the sealing substrate 522 of the light-emitting element 1 contains the following optical element 524: A red color filter was formed.

[0473] Next, in a glove box with a nitrogen atmosphere, the sealing substrate 522 is sealed with a sealing material. The light emitting element was sealed by fixing it on the substrate 502. Specifically, A sealing material is applied around the chip, and then the substrate 502 and the sealing substrate 522 are bonded together to form a seal. 365 nm ultraviolet light was applied to the sealing material from the side of the sealing substrate 522 at 6 J / cm 2 Irradiated and heated to 80°C The resulting material was then heat-treated for 1 hour. Light-emitting device 1 was obtained through the above steps.

[0474] <1-2. Fabrication of Light-Emitting Device 2> The fabrication of the light-emitting element 2 differs from that of the light-emitting element 1 described above only in the following steps: The same fabrication method as for the light-emitting element 1 was used.

[0475] On the lower electrode 504, an ITSO film was deposited as a transparent conductive film 506 to a thickness of 30 nm. Next, a hole injection layer 531 was formed on the transparent conductive film 506 by depositing a mixture of PCPPn and MoO 3 was added to the film so that the weight ratio (PCPPn:MoO3) was 2:1 and the thickness was 35 nm. The resulting mixture was co-evaporated with the aluminum alloy.

[0476] As shown in Table 3, the sealing substrate 522 of the light-emitting element 2 contains the following optical element 524: A green color filter was formed.

[0477] <1-3. Fabrication of Light-Emitting Device 3> The light-emitting element 3 is fabricated in the following steps, which are different from the light-emitting element 1 described above. The same fabrication method as for the light-emitting element 1 was used.

[0478] On the lower electrode 504, an ITSO film was deposited as a transparent conductive film 506 to a thickness of 80 nm. Next, a hole injection layer 531 was formed on the transparent conductive film 506 by depositing a mixture of PCPPn and MoO 3 was added to the film so that the weight ratio (PCPPn:MoO3) was 2:1 and the thickness was 50 nm. The resulting mixture was co-evaporated with the aluminum alloy.

[0479] As shown in Table 4, the sealing substrate 522 of the light-emitting element 3 contains the following optical element 524: A blue (Blue-1) color filter was formed.

[0480] <1-4. Fabrication of Light-Emitting Device 4> The fabrication of the light-emitting element 4 differs from that of the light-emitting element 1 described above only in the following steps: The same fabrication method as for the light-emitting element 1 was used.

[0481] On the lower electrode 504, an ITSO film was deposited as a transparent conductive film 506 to a thickness of 80 nm. Next, a hole injection layer 531 was formed on the transparent conductive film 506 by depositing a mixture of PCPPn and MoO 3 was added to the film so that the weight ratio (PCPPn:MoO3) was 2:1 and the thickness was 50 nm. The resulting mixture was co-evaporated with the aluminum alloy.

[0482] As shown in Table 4, the sealing substrate 522 of the light-emitting element 4 contains the following optical element 524: A blue (Blue-2) color filter was formed.

[0483] <1-5. Fabrication of Light-Emitting Element 5> The light-emitting element 5 is fabricated in the following steps, which are different from the light-emitting element 1 described above. The same fabrication method as for the light-emitting element 1 was used.

[0484] On the lower electrode 504, an ITSO film was deposited as a transparent conductive film 506 to a thickness of 30 nm. Next, a hole injection layer 531 was formed on the transparent conductive film 506 by depositing a mixture of PCPPn and MoO 3 was added to the film so that the weight ratio (PCPPn:MoO3) was 2:1 and the thickness was 50 nm. The resulting mixture was co-evaporated with the aluminum alloy.

[0485] As shown in Table 5, the sealing substrate 522 of the light emitting element 5 contains the following optical element 524: A yellow color filter was formed.

[0486] <1-6. Fabrication of Light-Emitting Device 6> The light-emitting element 6 is fabricated in the following steps, which are different from the light-emitting element 1 described above. The same fabrication method as for the light-emitting element 1 was used.

[0487] On the lower electrode 504, an ITSO film was deposited as a transparent conductive film 506 to a thickness of 30 nm. Next, a hole injection layer 531 was formed on the transparent conductive film 506 by depositing a mixture of PCPPn and MoO 3 was added to the film so that the weight ratio (PCPPn:MoO3) was 2:1 and the thickness was 50 nm. The resulting mixture was co-evaporated with the aluminum alloy.

[0488] As shown in Table 5, the sealing substrate 522 of the light-emitting element 6 is provided with an optical element 524. The light-emitting element 5 and the light-emitting element 6 differ in that they are formed with or without the optical element 524. be.

[0489] <1-7. Fabrication of Comparative Light-Emitting Element 7> The comparative light-emitting element 7 was fabricated in the following steps, which were different from the fabrication of the light-emitting element 1 described above. The fabrication process was the same as that for the light-emitting element 1.

[0490] On the lower electrode 504, an ITSO film was deposited as a transparent conductive film 506 to a thickness of 80 nm. Next, a hole injection layer 531 was formed on the transparent conductive film 506 by depositing a mixture of PCPPn and MoO 3 was added to the film so that the weight ratio (PCPPn:MoO3) was 2:1 and the thickness was 50 nm. The resulting mixture was co-evaporated with the aluminum alloy.

[0491] As shown in Table 6, the sealing substrate 522 of the comparative light-emitting element 7 includes an optical element 524 and Thus, a blue (Blue-3) color filter was formed.

[0492] <1-8. Characteristics of light-emitting elements> Next, the luminance vs. current density of the light-emitting elements 1 to 6 and the comparative light-emitting element 7 fabricated above was measured. The characteristics are shown in FIG. 51(A), and the luminance-voltage characteristics are shown in FIG. 51(B). The power efficiency-luminance characteristics of the light-emitting elements 2, 5, and 6 are shown in FIG. 52(A). 52B shows the power efficiency vs. luminance characteristics of the light-emitting element 3, the light-emitting element 4, and the comparative light-emitting element 7. The current efficiency vs. luminance of the light-emitting elements 1, 2, 5, and 6 is shown in Table 1. The characteristics are shown in FIG. 53A. The current efficiencies of the light-emitting element 3, the light-emitting element 4, and the comparative light-emitting element 7 are The luminance characteristics are shown in Figure 53(B). The measurements for each light-emitting element were carried out at room temperature (25°C). I went there with a feeling of excitement.

[0493] Also, 1000cd / m 2 Light-emitting elements 1 to 6 and comparative light-emitting element The device characteristics of element 7 are shown in Table 7.

[0494] [Table 7]

[0495] Furthermore, the light-emitting elements 1 to 6 and the comparative light-emitting element 7 were supplied with a current of 2.5 mA / cm 2 Current density of The electroluminescence spectrum when a current was passed at 1000 Hz is shown in FIG.

[0496] As shown in FIGS. 51, 52, 53, and Table 7, the light-emitting element 1 has high color purity and Light-emitting element 2 exhibited high color purity and high luminous efficiency. Furthermore, the light-emitting elements 3 and 4 had high color purity and high luminous efficiency. Furthermore, the light-emitting elements 5 and 6 had high color purity and emitted blue light. Highly efficient yellow light emission was obtained.

[0497] As shown in FIG. 54, the light-emitting element 1 emits red light with a narrow half-value width and high color purity. Furthermore, light-emitting element 2 emitted green light with a small full width at half maximum and high color purity. Light-emitting elements 3 and 4 emitted blue light with a narrow half-value width and high color purity. Furthermore, the light-emitting elements 5 and 6 emit yellow light with a small half-value width and high color purity. On the other hand, the comparative light-emitting element 7 emitted blue light with a narrow half-value width, but The emission spectrum has a maximum in the red region from 1000 nm to 680 nm, so color purity A decrease in

[0498] The chromaticity of monochromatic light with a wavelength of 530 nm is chromaticity x of 0.155 and chromaticity y of 0.806. The chromaticity of monochromatic light with a wavelength of 680 nm is chromaticity x of 0.733 and chromaticity y of 0.267. Also, the blue chromaticity, for example, the National Television System Committee (NTSC) The chromaticity of blue in the color gamut standard established by the In other words, light with wavelengths of 530 nm or more and 680 nm or more has a chromaticity of chromaticity x and Therefore, a certain amount of light with wavelengths between 530 nm and 680 nm is emitted. When mixed with blue light, at least one of the chromaticity x and chromaticity y increases. Therefore, in order to obtain blue light emission with high color purity, It is desirable that the intensity of light with a wavelength of 680 nm or more is low.

[0499] Furthermore, the viewing angle dependence of the chromaticity of the light-emitting elements 1 to 6 and the comparative light-emitting element 7 was The results of calculating the chromaticity difference Δu'v' in the oblique direction from the front direction are shown in Figure 55 and Table 8. The emission spectrum of the light-emitting element 3 measured from the front direction to the oblique direction is shown in FIG. 6(A) shows the emission spectrum of the light-emitting element 4 measured in the front direction and oblique direction. 6(B) shows the emission spectrum of the comparative light-emitting element 7 measured in the front direction and oblique direction. are shown in Figure 57. Also, the third maximum of the emission spectrum in Figure 56(A) The wavelengths of the first and fourth maximums are shown in Table 9, and the wavelengths of the first and fourth maximums of the emission spectrum in Figure 56(B) are shown. The wavelengths of the third and fourth maximum values ​​are shown in Table 10, and the emission spectrum in Figure 57 The wavelengths of the third and fourth maximum values ​​of the curve are shown in Table 11.

[0500] [Table 8]

[0501] [Table 9]

[0502] [Table 10]

[0503] [Table 11]

[0504] The chromaticity difference Δu'v' was calculated as follows: First, a 2.5 mA / c m 2 The current was passed at a current density of 0° and the electroluminescence spectrum was measured from the front direction (0°) to the oblique direction (70°). The relative tristimulus values ​​(X, Y, Z) were calculated from the electroluminescence spectrum as follows: Calculations were made using formulas (5) to (7).

[0505]

number

[0506]

number

[0507]

number

[0508] In the formulas (5) to (7), S(λ) represents the emission spectrum, x(λ), y(λ) and z(λ) represent color matching functions in the XYZ color system, and λ represents the wavelength.

[0509] Furthermore, the relative values ​​of the calculated tristimulus values ​​(X, Y, Z) are used to calculate the CIE 1976 chromaticity system. The chromaticity coordinates u'v' were calculated from the following formulas (8) and (9).

[0510]

number

[0511]

number

[0512] In addition, the chromaticity difference Δu' from 0° in the diagonal direction in the calculated chromaticity (u', v') v'(θ1) was calculated using the following formula (10).

[0513]

number

[0514] In the formula (10), u'(θ1) is the chromaticity u' at angles from 0° to 70°. and v'(θ1) represents the chromaticity v' at angles from 0° to 70°. The angle θ1 of the light-emitting direction is set to 0° in the normal direction of the light-emitting surface, and is the angle based on the normal vector. It shows.

[0515] As shown in FIG. 55, the light-emitting elements 1 to 6 have chromaticity at angles of 0° to 70°. The difference Δu'v' was less than 0.15, and the viewing angle dependency of chromaticity was small. In particular, Δu'v'(70°) of light-emitting element 3 is an excellent value of 0.0057, which is very small. On the other hand, the comparative light-emitting element 7 had a large chromaticity difference Δu'v' (70°) of 0.23. As a result, the viewing angle dependency of chromaticity was large.

[0516] In the light-emitting element 3, the light-emitting element 4, and the comparative light-emitting element 7, The color filter is an optical element 524 provided on the sealing substrate 522 side. The filter materials are different. Specifically, Light-emitting element 3 (Blue-1) < Light-emitting element 4 (Bl ue-2) < comparative light-emitting element 7 (Blue-3), in that order: 530 nm or more and 680 nm or less The material used had a low transmittance range for light of wavelengths of 10 ... The order of 'v' (70°) was Light-emitting element 3 < Light-emitting element 4 < Comparative light-emitting element 7. Therefore, an optical element having a region with low transmittance for light having a wavelength of 530 nm or more and 680 nm or less is obtained. By using this, it is possible to fabricate an element with a small chromaticity difference Δu'v' and a small viewing angle dependency of chromaticity. This can be done.

[0517] Furthermore, as shown in Figures 56(A) and (B), Figure 57, Tables 9, 10, and 11, The intensity ratio of the fourth maximum value to the third maximum value in the light-emitting element 3 and the light-emitting element 4 is 0° to At 70°, the value was 15% or less, which was a sufficiently low value. The light-emitting element 4 was an element with small viewing angle dependency. The intensity ratio of the fourth maximum to the maximum was less than 3%, which was an extremely small and excellent value. On the other hand, the intensity ratio of the fourth maximum value to the third maximum value in the comparative light-emitting element 7 was The results showed that the chromaticity of the comparative light-emitting element 7 was higher than 15% at 70° and 70°. Therefore, the wavelength range of 530 nm to 680 nm is By using an optical element with a region of low transmittance, it is possible to fabricate an element with low viewing angle dependency. It is possible.

[0518] As described above, by using the structure of one embodiment of the present invention, a display device having high color purity and a wide chromaticity range can be obtained. A light-emitting device having small angle dependence and high luminous efficiency can be manufactured.

[0519] As described above, the configuration shown in this embodiment can be used in appropriate combination with other embodiments. . [Explanation of symbols]

[0520] 100 EL layer 101B Light-emitting element 101G Light-emitting element 101R light-emitting element 101Y Light-emitting element 102 Circuit Board 104B Lower electrode 104G bottom electrode 104R lower electrode 104Y bottom electrode 106B Transparent conductive film 106G Transparent conductive film 106R Transparent conductive film 106Y transparent conductive film 108 Light-emitting layer 110 Light-emitting layer 112 Light-emitting layer 116 Charge generation layer 120 Upper electrode 122 PCB 123 Light blocking layer 124B Optical Elements 124G Optical Elements 124R Optical Element 124Y Optical Element 131 Hole injection layer 132 Hole transport layer 133 Electron transport layer 134 Electron injection layer 135 Hole injection layer 136 Hole transport layer 137 Electron transport layer 138 Electron injection layer 140 Bulkhead 150 Light-emitting device 150B Light-emitting device 152 Light-emitting device 152B Light-emitting device 154 Light-emitting device 156 Light-emitting device 156B Light-emitting device 158 Light-emitting device 160 Light-emitting device 160B Light-emitting device 170 Light-emitting device 170A Light Emitting Device 172 Light-emitting device 172A Light-emitting device 174 Light-emitting device 174A Light-emitting device 176 Light-emitting device 176A Light-emitting device 178 Light-emitting device 178A Light-emitting device 181 light 182 light 183 light 184 light 190 Light-emitting device 190A Light Emitting Device 400 EL layer 401 Electrode 402 Electrode 411 Hole injection layer 412 Hole transport layer 413 Light-emitting layer 414 Light-emitting layer 415 Electron transport layer 416 Electron injection layer 421 Guest Materials 422 Host Material 431 Guest Materials 432 Organic compounds 433 Organic compounds 450 light-emitting elements 502 board 504 Lower electrode 506 Transparent conductive film 508 Light-emitting layer 510 Light-emitting layer 516 Charge generation layer 520 Upper electrode 522 Sealing substrate 524 Optical Elements 531 Hole injection layer 532 Hole transport layer 533 Electron transport layer 534 Electron injection layer 536 Hole transport layer 537 Electron transport layer 538 Electron injection layer 600 Light-emitting device 601 Signal line driver circuit section 602 Pixel section 603 Scanning line driving circuit section 604 Sealing substrate 605 Sealing material 607 area 608 Wiring 609 FPC 610 Element substrate 611 Transistor 612 Transistor 613 Lower electrode 614 Bulkhead 616 EL layer 617 Upper electrode 618 Light-emitting element 621 Optical Elements 622 Light blocking layer 623 Transistor 624 Transistor 801 pixel circuit 802 pixel section 804 Drive circuit section 804a Scanning line driving circuit 804b Signal line driver circuit 806 protection circuit 807 Terminal section 852 transistors 854 transistors 862 Capacitor element 872 Light-emitting element 1001 board 1002 Undercoat insulating film 1003 Gate insulating film 1006 Gate electrode 1007 Gate electrode 1008 gate electrode 1020 Interlayer insulating film 1021 Interlayer insulating film 1022 Electrode 1024B Lower electrode 1024G bottom electrode 1024R lower electrode 1024Y bottom electrode 1025 Bulkhead 1026 Upper electrode 1028 EL layer 1029 Sealing layer 1031 Sealing substrate 1032 Sealing material 1033 Base material 1034B Colored layer 1034G colored layer 1034R colored layer 1034Y colored layer 1035 Light blocking layer 1036 Overcoat layer 1037 Interlayer insulating film 1040 pixel section 1041 Drive circuit section 1042 Periphery 2000 touch panel 2001 Touch Panel 2501 Display section 2502R pixels 2502t transistor 2503c Capacitive element 2503g Scanning line driver circuit 2503s signal line driver circuit 2503t transistor 2509 FPC 2510 board 2511 Wiring 2519 terminal 2521 Insulation layer 2528 Bulkhead 2550R light emitting element 2560 Sealing Layer 2567BM light shielding layer 2567p anti-reflection layer 2567R colored layer 2570 board 2580R Light Emitting Module 2590 board 2591 Electrode 2592 Electrode 2593 Insulation Layer 2594 Wiring 2595 Touch Sensor 2597 Adhesive layer 2598 Wiring 2599 Connection Layer 2601 Pulse voltage output circuit 2602 Current detection circuit 2603 Capacity 2611 Transistor 2612 transistor 2613 Transistor 2621 Electrode 2622 Electrode 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8005 FPC 8006 Display Panel 8009 Frame 8010 Printed Circuit Board 8011 Battery 8501 Lighting equipment 8502 Lighting equipment 8503 Lighting equipment 8504 Lighting equipment 9000 chassis 9001 Display section 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9050 Operation button 9051 Information 9052 Information 9053 Information 9054 Information 9055 Hinge 9100 Mobile Information Terminal 9101 Mobile Information Terminal 9102 Mobile Information Terminal 9200 Mobile Information Terminal 9201 Mobile Information Terminal

Claims

1. a first light-emitting element, a second light-emitting element, a third light-emitting element, a first optical element, a second optical element, and a third optical element; the first light-emitting element, the second light-emitting element, and the third light-emitting element each have a microcavity structure; the light emitted from the first light-emitting element via the first optical element has a first maximum value in a wavelength range of 600 nm or more and 740 nm or less in a spectrum; the light emitted from the second light-emitting element via the second optical element has a second maximum value in a wavelength range of 480 nm or more and less than 550 nm in its spectrum, the light emitted from the third light-emitting element via the third optical element has a spectrum in a range of more than 0° and not more than 70° with respect to a normal vector of the third light-emitting element, a third maximum value in a wavelength range of 400 nm or more and less than 480 nm, and a fourth maximum value located on the longer wavelength side than the third maximum value; an intensity ratio of the fourth maximum value to the third maximum value is 15% or less; the first optical element has a region having a transmittance of 50% or more for light having a wavelength of 570 nm or more and 800 nm or less; the second optical element has a region having a transmittance of 50% or more for light with a wavelength of 480 nm or more and less than 570 nm; the third optical element has a region in which the transmittance of light having a wavelength of 400 nm or more and less than 480 nm is 50% or more, and a region in which the transmittance of light having a wavelength of 530 nm or more and 680 nm or less is 20% or less, the first light-emitting element has a first lower electrode, a first transparent conductive film, a first light-emitting layer, a second light-emitting layer, and a first upper electrode; the second light-emitting element includes a second lower electrode, a second transparent conductive film, the first light-emitting layer, the second light-emitting layer, and a second upper electrode; the third light-emitting element includes a third lower electrode, a third transparent conductive film, the first light-emitting layer, the second light-emitting layer, and a third upper electrode; the third transparent conductive film has a thickness greater than the thickness of the first transparent conductive film and the thickness of the second transparent conductive film; an optical distance between the first lower electrode and the first upper electrode is m R λ R / 2 (m R is a natural number, and λ R represents a red wavelength); an optical distance between the second lower electrode and the first upper electrode is m G λ G / 2 (m G is a natural number, and λ G represents a green wavelength); an optical distance between the third lower electrode and the third upper electrode is m B λ B / 2 (m B is a natural number, and λ B represents a wavelength of blue light); the first light-emitting layer includes a first host material and a first guest material; T of the first host material １ The level is the T １ Lower than the level the second light-emitting layer includes a first organic compound, a second organic compound, and a second guest material; the first organic compound and the second organic compound are a combination that forms an exciplex, the first guest material is a light-emitting substance that emits blue light, The light-emitting device, wherein the second guest material is a light-emitting substance that emits yellow light.

2. The light emitting device according to claim 1; An electronic device having a housing and / or a touch sensor.

3. The light emitting device according to claim 1; A lighting device having a housing and / or a touch sensor.

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