How to remove the resin mask

Abstract

To provide, in one aspect, a resin mask peeling method which can suppress damage to a passivation film, and is excellent in resin mask peelability.SOLUTION: In one aspect, the present disclosure relates to a resin mask peeling method including a step of peeling a resin mask from a substrate having a passivation film and a resin mask formed on the passivation film using a detergent composition, wherein the detergent composition is an aqueous cleaning agent containing the following component A, the following component B and the following component C, and the content of the component C in the detergent composition is 65 mass% or more. Component A: at least one alkali agent selected from tetramethylammonium hydroxide and amine. Component B: surfactant represented by R-O-(EO)n-H, wherein R represents a straight or branched-chain hydrocarbon group having 8 to 22 carbon atoms, EO represents an ethyleneoxy group, and n is an average addition molar number of EO and is a number of 12 or more and 35 or less. Component C: water.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present disclosure relates to a method for stripping a resin mask. [Background technology]

[0002] In recent years, personal computers and various electronic devices have become increasingly power-efficient, faster, and more compact, and the wiring on the package substrates and other components they are equipped with has been getting finer every year. Until now, metal masking has been the primary method used to form such fine wiring and connection terminals such as pillars and bumps, but due to its limited versatility and the difficulty of adapting to the miniaturization of wiring, new methods are being adopted.

[0003] One new method is to use a dry film resist as a thick resin mask instead of a metal mask. This resin mask is eventually peeled off and removed, and a cleaning agent for peeling off the resin mask containing an alkaline agent and water is known as a cleaning agent for the peeling off and removal.

[0004] For example, Patent Document 1 describes a cleaning composition for removing resin masks while reducing damage to substrate resins in the manufacturing process of electronic components. The cleaning composition contains an alkaline agent, an organic solvent having a specific Hansen solubility parameter, and water, and the water content is 69.9% by mass or more and 99.4% by mass or less. Patent Document 2 describes a resist stripper containing alkyldiphenyl ether disulfonic acid, polyoxyethylene nonylphenyl ether, alkali metal hydroxide, and water as a stripper for stripping resist applied to a substrate in a method for manufacturing a printed circuit or the like. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2020 / 021721 [Patent Document 2] Japanese Patent Application Publication No. 07-70590 Summary of the Invention [Problem to be solved by the invention]

[0006] When forming fine wiring on printed circuit boards and the like, a cleaning composition is required to have high cleaning performance in order to reduce not only the residue of the resin mask but also the residue of auxiliary agents contained in the solder and plating solution used in forming the fine wiring and bumps. Here, the resin mask is formed using a resist whose physical properties, such as solubility in a developer, change when exposed to light or an electron beam. Resists are broadly divided into negative and positive types based on how they react with light or an electron beam. Negative resists have the property of decreasing their solubility in a developer when exposed to light, and the exposed portion of a layer containing negative resist (hereinafter also referred to as a "negative resist layer") is used as a resin mask after exposure and development. Positive resists have the property of increasing their solubility in a developer when exposed to light, and the exposed portion of a layer containing positive resist (hereinafter also referred to as a "positive resist layer") is removed after exposure and development, and the unexposed portion is used as a resin mask. By using a resin mask with such properties, fine connections on circuit boards, such as metal wiring, metal pillars, and solder bumps, can be formed.

[0007] However, as wiring becomes finer, it becomes more difficult to remove resin masks from minute gaps, and therefore cleaning compositions are required to have high resin mask stripping properties. Furthermore, when a passivation film (protective film) is formed on the surface of a substrate on which wiring is formed, damage to the passivation film leads to a decrease in the quality and value of the package substrate, so a cleaning composition is required to cause minimal damage to the passivation film.

[0008] Therefore, in one aspect, the present disclosure provides a method for stripping a resin mask that can suppress damage to a passivation film and has excellent resin mask stripping properties. [Means for solving the problem]

[0009] In one aspect, the present disclosure relates to a method for stripping a resin mask (hereinafter also referred to as the "stripping method of the present disclosure"), which includes a step of stripping the resin mask from a substrate having a passivation film and a resin mask formed on the passivation film, by using a cleaning composition, wherein the cleaning composition is an aqueous cleaning agent containing the following components A, B, and C (hereinafter also referred to as the "cleaning composition of the present disclosure"), and the content of component C in the cleaning composition is 65 mass% or more. Component A: at least one alkaline agent selected from tetramethylammonium hydroxide and amines Component B: RO-(EO) n -H (wherein R represents a linear or branched hydrocarbon group having 8 to 22 carbon atoms, EO represents an ethyleneoxy group, and n represents the average number of moles of EO added, which is a number of 12 to 35) Component C: Water [Effects of the Invention]

[0010] According to one aspect of the present disclosure, a method for removing a resin mask can be provided that can suppress damage to a passivation film and has excellent resin mask removal properties. DETAILED DESCRIPTION OF THE INVENTION

[0011] The present disclosure is based on the finding that the use of a cleaning composition containing an alkaline agent and a specific surfactant makes it possible to efficiently strip a resin mask while suppressing damage to a passivation film.

[0012] According to the present disclosure, a resin mask stripping method that can suppress damage to a passivation film and has excellent resin mask stripping properties can be provided. Furthermore, by using the stripping method of the present disclosure, high-quality electronic components can be obtained with a high yield.

[0013] Although the details of the mechanism of action by which the effects of the present disclosure are manifested are still unclear, it is presumed as follows. It is believed that specific alkaline agents penetrate into the resin mask, promoting the dissociation of the alkali-soluble resin contained in the resin mask, and further promoting the peeling of the resin mask by causing the repulsion of the charges generated by the dissociation. On the other hand, it is believed that specific surfactants are less likely to adsorb to the resin mask and therefore less likely to interfere with the action of specific alkaline agents. Furthermore, it is believed that specific surfactants can suppress damage from specific alkaline agents by adsorbing to the passivation film. However, the present disclosure need not be construed as being limited to this mechanism.

[0014] In the present disclosure, a resin mask is a mask for protecting the surface of a material from treatments such as etching, plating, heating, etc., i.e., a mask that functions as a protective film. In one or more embodiments, the resin mask may be a resist layer after exposure and development steps, a resist layer that has been subjected to at least one of exposure and development (hereinafter also referred to as "exposed and / or developed"), or a hardened resist layer. In one or more embodiments, the resin material for forming the resin mask may be a film-like negative photosensitive resin, a resist film, or a photoresist. A general-purpose resist film may be used, and a negative resist film is preferred. The resin mask may be, for example, an acrylic acid-based polymer film. The thickness of the resin mask is, for example, 3 μm or more and 250 μm or less, and from the viewpoint of being able to peel it off even if it is thick, it is preferably 100 μm or more, and more preferably 200 μm or more.

[0015] In the present disclosure, in one or more embodiments, a passivation film is a surface protection film that protects a semiconductor element from external damage. The passivation film may be at least one polymer film selected from polyimide (PI) based polymers, polybenzoxazole (PBO) based polymers, and silicone based polymers. The thickness of the passivation film is, for example, 5 μm to 20 μm, and is preferably 12 μm or less, more preferably 10 μm or less, from the viewpoint that damage can be suppressed when the resin mask is peeled off even if the thickness is thin.

[0016] [Peeling process] The stripping method of the present disclosure includes a step of stripping a resin mask from a substrate (object to be cleaned) having a passivation film and a resin mask formed on the passivation film, using the cleaning composition of the present disclosure (hereinafter also simply referred to as a "stripping step"). In one or more embodiments, the peeling step includes contacting the object to be cleaned with the cleaning composition of the present disclosure.

[0017] Examples of a method for peeling a resin mask from an object to be cleaned using the cleaning composition of the present disclosure, or a method for contacting an object to be cleaned with the cleaning composition of the present disclosure, include a method of contacting the object by immersing the object in a cleaning bath containing the cleaning composition, a method of contacting the object by spraying the cleaning composition (shower method), and an ultrasonic cleaning method of irradiating the object with ultrasonic waves during immersion. The cleaning composition of the present disclosure can be used for cleaning as is without dilution. Examples of objects to be cleaned include those described below.

[0018] In one or more embodiments, the stripping method of the present disclosure may include a step of contacting the object to be cleaned with the cleaning composition, followed by rinsing with water and drying.In one or more embodiments, the stripping method of the present disclosure may include a step of contacting the object to be cleaned with the cleaning composition, followed by rinsing with water.

[0019] In the stripping method of the present disclosure, ultrasonic waves are preferably applied when the cleaning composition of the present disclosure comes into contact with the object to be cleaned, and the ultrasonic waves are more preferably relatively high frequency, from the same viewpoint. The ultrasonic irradiation conditions are, for example, preferably 26 to 72 kHz and 80 to 1500 W, more preferably 36 to 72 kHz and 80 to 1500 W.

[0020] In the stripping method of the present disclosure, the temperature of the cleaning composition is preferably 40°C or higher, more preferably 50°C or higher, from the viewpoint of easily exerting the detergency of the cleaning composition of the present disclosure, and is preferably 70°C or lower, more preferably 60°C or lower, from the viewpoint of suppressing damage to the passivation film and reducing the influence on the substrate.

[0021] [Items to be cleaned] In one or more embodiments, the object to be cleaned may be a substrate having a passivation film and a resin mask formed on the passivation film, such as a printed circuit board, a wafer, a copper plate, or an aluminum plate.

[0022] In one or more embodiments, the object to be cleaned may include an object to be cleaned having a resin mask attached thereto. In one or more embodiments, the object to be cleaned having a resin mask attached thereto may include an electronic component having a passivation film and a resin mask formed on the passivation film, and a manufacturing intermediate thereof. Examples of the electronic component include at least one component selected from a printed circuit board, a wafer, and a metal plate such as a copper plate or an aluminum plate. The manufacturing intermediate is an intermediate product in the manufacturing process of an electronic component, including an intermediate product after resin mask treatment. Specific examples of objects to be cleaned with a resin mask attached include electronic components having a resist film (resin mask) and a passivation film, which are obtained by undergoing a wiring formation process in which wiring is formed on a substrate, a passivation film formation process in which a passivation film is formed on the substrate on which wiring has been formed, a resist film formation process in which resist is applied on the passivation film and developed and / or exposed to light to form a patterned resist film, and an etching process in which the passivation film is etched using the patterned resist film as a mask.

[0023] The resin mask may be, for example, a negative resin mask or a positive resin mask. In the present disclosure, a negative resin mask is formed using a negative resist, and examples thereof include a negative resist layer that has been subjected to exposure and / or development. In the present disclosure, a positive resin mask is formed using a positive resist, and examples thereof include a positive resist layer that has been subjected to exposure and / or development.

[0024] [Cleaning composition] In one or more embodiments, the cleaning composition of the present disclosure is an aqueous cleaning agent containing the following component A, component B, and component C:

[0025] <Component A: Alkaline agent> The alkaline agent (hereinafter also referred to simply as "Component A") contained in the cleaning composition of the present disclosure is at least one alkaline agent selected from tetramethylammonium hydroxide (TMAH) and an amine. Component A may be a single type or a combination of two or more types.

[0026] (amine) The amine may be, for example, an amine represented by the following formula (I): One type of amine may be used, or two or more types may be used in combination. [ka]

[0027] In the above formula (I), R 1 represents a hydrogen atom, a methyl group, an ethyl group, or an aminoethyl group, and R 2 is at least one selected from a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group, and an ethyl group, and R 3 is at least one selected from a hydroxy group, an aminoethyl group, a hydroxyethyl group, and a hydroxypropyl group, or in formula (I), R 1 is at least one selected from a methyl group, an ethyl group, an aminoethyl group, a hydroxyethyl group, and a hydroxypropyl group, and R 2 and R3 are bonded to each other to form a pyrrolidine ring or a piperazine ring together with the N atom in formula (I).

[0028] Examples of the amine represented by formula (I) include hydroxylamine, alkanolamine, primary to tertiary amines, and heterocyclic compounds. Specific examples of amines include monoethanolamine, monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethylisopropanolamine, diethanolamine, triethanolamine, diisopropanolamine, N-dimethylmonoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N-diethylmonoethanolamine, N-diethylmonoisopropanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N-(β-aminoethyl)ethanolamine, N-(β-aminoethyl)isopropanolamine, N-(β-aminoethyl)diethanolamine, N-(β-aminoethyl)diisopropanolamine, 1-methylpiperazine, 1-(2-hydroxyethyl)pyrrolidine, 1-(2-hydroxyethyl)piperazine, ethylenediamine, and at least one selected from diethylenetriamine. Among these, from the viewpoint of improving the peelability of the resin mask, at least one of hydroxylamine, monoethanolamine and triethanolamine is preferred, and monoethanolamine is more preferred.

[0029] Component A may be at least one selected from tetramethylammonium hydroxide (TMAH), monoethanolamine, triethanolamine, and hydroxylamine, from the viewpoints of improving the peelability of the resin mask and suppressing damage to the passivation film.

[0030] The content of Component A in the cleaning composition of the present disclosure is preferably 1% by mass or more, more preferably 5% by mass or more, and even more preferably 10% by mass or more, from the viewpoint of resin mask peelability, and is preferably 20% by mass or less, more preferably 15% by mass or less, from the viewpoint of suppressing damage to the passivation film. More specifically, the content of Component A in the cleaning composition of the present disclosure is preferably 1% by mass or more and 20% by mass or less, more preferably 5% by mass or more and 15% by mass or less, and even more preferably 10% by mass or more and 15% by mass or less. When Component A is a combination of two or more types, the content of Component A refers to the total content of those types. When component A contains TMAH, the content of TMAH in the cleaning composition of the present disclosure is preferably 0.5% by mass or more, more preferably 1% by mass or more, and even more preferably 2% by mass or more from the viewpoint of resin mask peelability, and is preferably 5% by mass or less, more preferably 3% by mass or less from the viewpoint of suppressing damage to the passivation film. More specifically, the content of TMAH in the cleaning composition of the present disclosure is preferably 0.5% by mass or more and 5% by mass or less, more preferably 1% by mass or more and 3% by mass or less, and even more preferably 2% by mass or more and 3% by mass or less. When component A contains an amine, the content of the amine in the cleaning composition of the present disclosure is preferably 1% by mass or more, more preferably 3% by mass or more, and even more preferably 5% by mass or more from the viewpoint of resin mask strippability, and is preferably 15% by mass or less, more preferably 12% by mass or less from the viewpoint of suppressing damage to the passivation film. More specifically, the content of the amine in the cleaning composition of the present disclosure is preferably 1% by mass or more and 15% by mass or less, more preferably 3% by mass or more and 12% by mass or less, and even more preferably 5% by mass or more and 12% by mass or less. When two or more amines are used in combination, the content of the amine refers to the total content of the amines.

[0031] In the present disclosure, the "content of each component in the detergent composition" refers to the content of each component at the time of cleaning (time of use), i.e., at the time when the detergent composition is first used for cleaning.

[0032] <Component B: Surfactant> In one or more embodiments, the surfactant contained in the cleaning composition of the present disclosure (hereinafter also referred to as "Component B") is a surfactant represented by the following formula (II) from the viewpoints of improving resin mask strippability and suppressing damage to the passivation film. Component B may be one type or a combination of two or more types. RO-(EO) n -H (II)

[0033] In formula (II), R represents a linear or branched hydrocarbon group having 8 to 22 carbon atoms, EO represents an ethyleneoxy group, and n is the average number of moles of EO added, which is a number of 12 to 35. In formula (II), from the viewpoint of improving the peelability of the resin mask and suppressing damage to the passivation film, R is a linear or branched hydrocarbon group having from 8 to 22 carbon atoms, and is preferably at least one selected from a linear or branched alkyl group having from 10 to 20 carbon atoms and a linear or branched alkenyl group having from 10 to 16 carbon atoms, and more preferably a linear or branched alkyl group having from 10 to 16 carbon atoms. From the viewpoints of improving the peelability of the resin mask and suppressing damage to the passivation film, the number of carbon atoms in the R group is preferably 8 or more, more preferably 10 or more, even more preferably 12 or more, and preferably 22 or less, more preferably 20 or less, and even more preferably 16 or less. That is, the number of carbon atoms in the R group is preferably 8 or more and 22 or less, more preferably 10 or more and 20 or less, and even more preferably 12 or more and 16 or less. Specific examples of the R group include at least one selected from an octyl group, a 2-ethylhexyl group, a decyl group, an isodecyl group, a 2-propylheptyl group, a dodecyl group, a tridecyl group, a tetradecyl group, and a 2-octyldodecyl group. In formula (II), n is 12 or more, preferably 16 or more, more preferably 17 or more, and even more preferably 18 or more, from the viewpoints of improving the peelability of the resin mask and suppressing damage to the passivation film, and from the same viewpoints, n is 35 or less, preferably 30 or less, more preferably 28 or less, and even more preferably 24 or less. That is, n is 12 or more and 35 or less, preferably 16 or more and 30 or less, more preferably 17 or more and 28 or less, and even more preferably 18 or more and 24 or less.

[0034] From the viewpoints of improving the peelability of the resin mask and suppressing damage to the passivation film, component B may be at least one selected from polyoxyethylene (23) lauryl ether, polyoxyethylene (20) 2-octyldodecyl ether, and polyoxyethylene (18) alkyl ether (alkyl group having 11 to 13 carbon atoms). The number in parentheses indicates the average number of moles added.

[0035] The content of Component B in the cleaning composition of the present disclosure is preferably 0.1% by mass or more, more preferably 0.2% by mass or more, and even more preferably 0.3% by mass or more, from the viewpoints of improving resin mask strippability and suppressing damage to the passivation film. From the same viewpoints, it is preferably 5% by mass or less, more preferably 2% by mass or less, and even more preferably 1% by mass or less. From the viewpoint of reducing the content, it is even more preferably 0.5% by mass or less. More specifically, the content of Component B is preferably 0.1% by mass or more and 5% by mass or less, more preferably 0.2% by mass or more and 2% by mass or less, and even more preferably 0.3% by mass or more and 1% by mass or less. When Component B is a combination of two or more types, the content of Component B refers to the total content of those components.

[0036] In the cleaning composition of the present disclosure, the mass ratio (B / A) of the content of component B to the content of component A is preferably 0.01 or more, more preferably 0.02 or more, and even more preferably 0.03 or more, from the viewpoints of improving resin mask strippability and suppressing damage to the passivation film, and from the same viewpoints, is preferably 2 or less, more preferably 1 or less, and even more preferably 0.1 or less. More specifically, the mass ratio (B / A) is preferably 0.01 or more and 2 or less, more preferably 0.02 or more and 1 or less, and even more preferably 0.03 or more and 0.1 or less.

[0037] <Component C: Water> In one or more embodiments, examples of water contained in the cleaning composition of the present disclosure (hereinafter also referred to as "component C") include ion-exchanged water, RO water, distilled water, pure water, and ultrapure water.

[0038] The content of component C in the cleaning composition of the present disclosure can be the remainder excluding components A, B, and the optional components described below. Specifically, the content of component C in the cleaning composition of the present disclosure is 65% by mass or more, preferably 70% by mass or more, and more preferably 80% by mass or more, from the viewpoints of improving resin mask strippability, suppressing damage to the passivation film, reducing the load on wastewater treatment, and reducing the impact on the substrate. From the viewpoint of improving resin mask strippability, the content of component C is preferably 99% by mass or less, more preferably 98% by mass or less, and even more preferably 97% by mass or less. More specifically, the content of component C in the cleaning composition of the present disclosure is preferably 65% ​​by mass or more and 99% by mass or less, more preferably 70% by mass or more and 98% by mass or less, and even more preferably 80% by mass or more and 97% by mass or less.

[0039] <Other ingredients> The cleaning composition of the present disclosure may further contain other components as needed in addition to Components A to C. Examples of other components include components that are typically used in cleaning agents, such as alkaline agents other than Component A, organic solvents, surfactants other than Component B, chelating agents, thickeners, dispersants, rust inhibitors, polymeric compounds, solubilizers, antioxidants, preservatives, antifoaming agents, and antibacterial agents. The content of other components in the cleaning composition of the present disclosure is preferably from 0% by mass to 2% by mass, more preferably from 0% by mass to 1.5% by mass, even more preferably from 0% by mass to 1.3% by mass, and still more preferably from 0% by mass to 1% by mass.

[0040] In one or more embodiments, the cleaning composition of the present disclosure may be free of at least one component selected from organic solvents, anticorrosive agents, aliphatic amines other than alkanolamines, acidic organic compounds, octylic acid, fluorine compounds, oxoammonium compounds other than Component A, oxidizing agents, polyacrylic acid, acetonitrile, peroxides, hydrogen peroxides of quaternary ammonium salts, and alkyl diphenyl ether disulfonates.

[0041] The total content of organic matter derived from Component A, Component B, and optional components (other components) in the cleaning composition of the present disclosure is preferably 30% by mass or less, more preferably 25% by mass or less, even more preferably 20% by mass or less, and even more preferably 16% by mass or less, from the viewpoints of reducing the load on wastewater treatment and reducing the impact on substrates, and is preferably 2% by mass or more, more preferably 3% by mass or more, even more preferably 4% by mass or more, and even more preferably 6% by mass or more, from the viewpoint of improving resin mask strippability. More specifically, the total content of organic matter derived from Component A, Component B, and optional components (other components) in the cleaning composition of the present disclosure is preferably 2% by mass or more and 30% by mass or less, more preferably 3% by mass or more and 25% by mass or less, even more preferably 4% by mass or more and 20% by mass or less, and even more preferably 6% by mass or more and 16% by mass or less.

[0042] [pH of cleaning composition] The pH of the cleaning composition of the present disclosure is preferably 11 or more, more preferably 12 or more, even more preferably 13 or more, from the viewpoints of improving resin mask strippability, suppressing damage to the passivation film, and reducing the impact on the substrate, and is preferably 14 or less, more preferably 13.8 or less, and even more preferably 13.6 or less. If necessary, the pH can be adjusted using inorganic acids such as nitric acid and sulfuric acid, organic acids such as oxycarboxylic acids, polycarboxylic acids, aminopolycarboxylic acids, and amino acids, as well as their metal salts and ammonium salts, and alkaline agents such as component A. The pH of the cleaning composition of the present disclosure refers to the pH at 25°C during use of the cleaning composition, and can be measured using a pH meter. Specifically, it can be measured by the method described in the Examples.

[0043] [Method of manufacturing the cleaning composition] In one or more embodiments, the cleaning composition of the present disclosure can be produced by blending Components A, B, and C, and, if necessary, the other components described above, by a known method. For example, in one or more embodiments, the cleaning composition of the present disclosure can be produced by blending Components A, B, and C. Therefore, the present disclosure relates to a method for producing a cleaning composition, which includes a step of blending at least Component A, Component B, and Component C. In the present disclosure, "blending" includes mixing Component A, Component B, Component C, and, if necessary, the other components described above simultaneously or in any order. In the method for producing a cleaning composition of the present disclosure, the preferred amount of each component to be blended may be the same as the preferred content of each component in the cleaning composition of the present disclosure described above.

[0044] The cleaning composition of the present disclosure may be in a form that is directly used for cleaning, or may be prepared as a concentrate by reducing the amount of water (component C) to the extent that separation, precipitation, or the like does not occur and storage stability is not impaired. From the viewpoint of transportation and storage, the concentrated cleaning composition is preferably diluted 3 times or more, and from the viewpoint of storage stability, it is preferably diluted 30 times or less. The concentrated cleaning composition can be used by diluting it with water (component C) so that each component (component A, component B, component C, and other components) has the above-mentioned content (i.e., the content at the time of cleaning) at the time of use. Furthermore, the concentrated cleaning composition can also be used by adding each component separately at the time of use. In the present disclosure, "at the time of use" or "at the time of cleaning" for a concentrated cleaning composition refers to the diluted state of the concentrated cleaning composition.

[0045] [Electronic component manufacturing method] In one aspect, the present disclosure relates to a method for manufacturing an electronic component (hereinafter also referred to as the "manufacturing method for an electronic component of the present disclosure"), which includes a step (a peeling step) of peeling a resin mask from a substrate (an object to be cleaned) having a passivation film and a resin mask formed on the passivation film by using the peeling method of the present disclosure. Examples of the object to be cleaned include the above-mentioned objects to be cleaned. According to the method for manufacturing electronic components disclosed herein, the resin mask attached to the electronic component can be effectively removed while suppressing damage to the passivation film, thereby enabling the manufacturing of highly reliable electronic components. Furthermore, by performing the cleaning method disclosed herein, the resin mask attached to the electronic component can be easily removed, thereby shortening the cleaning time and improving the manufacturing efficiency of electronic components.

[0046] In one or more embodiments, the method for producing an electronic component according to the present disclosure may include the following steps (1) to (5). (1) A process for forming wiring on a substrate (wiring formation process) (2) A process of forming a passivation film on the substrate on which the wiring has been formed (passivation film formation process) (3) A process of applying a resist onto the passivation film, exposing and / or developing the resist, and forming a patterned resist film (resist film forming process). (4) Various processing steps such as plating, development, and etching using a patterned resist film as a mask (processing steps) (5) A step of stripping the resist film (resin mask) using the cleaning composition of the present disclosure (stripping step).

[0047] [kit] In one aspect, the present disclosure relates to a kit (hereinafter also referred to as the "kit of the present disclosure") for use in either the stripping method of the present disclosure or the method for producing an electronic component of the present disclosure. In one or more embodiments, the kit of the present disclosure is a kit for producing the cleaning composition of the present disclosure. The kit of the present disclosure can suppress damage to a passivation film and provide a cleaning composition with excellent resin mask stripping properties.

[0048] In one or more embodiments, the kit of the present disclosure includes a kit (two-liquid cleaning composition) that contains a solution containing component A (first liquid) and a solution containing component B (second liquid) in a mutually unmixed state, at least one of the first and second liquids further containing some or all of water (component C), and the first and second liquids are mixed at the time of use. After the first and second liquids are mixed, they may be diluted with water (component C) as needed. Each of the first and second liquids may contain the above-mentioned optional components (other components) as needed. [Example]

[0049] The present disclosure will be specifically described below using examples, but the present disclosure is not limited to these examples in any way.

[0050] 1. Preparation of cleaning compositions of Examples 1 to 5 and Comparative Examples 1 to 8 The components shown in Table 1 were blended in the amounts (mass %, active ingredient) shown in Table 1 and mixed by stirring to prepare the cleaning compositions of Examples 1 to 5 and Comparative Examples 1 to 8.

[0051] The cleaning compositions of Examples 1 to 5 and Comparative Examples 1 to 8 were prepared using the following materials. (Component A) Tetramethylammonium hydroxide [Showa Denko K.K., concentration 25%] Monoethanolamine [Nippon Shokubai Co., Ltd.] Triethanolamine [Nippon Shokubai Co., Ltd.] Hydroxylamine [Fujifilm Wako Pure Chemical Industries, Ltd.] (Non-ingredient A) KOH: Potassium hydroxide [Fujifilm Wako Pure Chemical Industries, Ltd.] NaOH: Sodium hydroxide [Fujifilm Wako Pure Chemical Industries, Ltd.] (Component B) Polyoxyethylene (18) alkyl ether [manufactured by Kao Corporation] (R in formula (II): alkyl group having 11 to 13 carbon atoms, n: 18) Polyoxyethylene (23) lauryl ether [manufactured by Kao Corporation] [R in formula (II): alkyl group having 12 carbon atoms, n: 23] Polyoxyethylene (20) 2-octyldodecyl ether [manufactured by Kao Corporation] (R in formula (II): alkyl group having 12 carbon atoms, n: 20) (Non-ingredient B) Ethylene glycol [Fujifilm Wako Pure Chemical Industries, Ltd.] Tetrahydrofuran [Fujifilm Wako Pure Chemical Industries, Ltd.] Polyoxyethylene (6) lauryl ether [manufactured by Kao Corporation] (R in formula (II): alkyl group having 12 carbon atoms, n: 6) Polyoxyethylene (47) lauryl ether [manufactured by Kao Corporation] (R in formula (II): alkyl group having 12 carbon atoms, n: 47) Sodium alkyl diphenyl ether disulfonate [Kao Corporation] Polyoxyethylene (17) nonylphenyl ether [manufactured by Kao Corporation] (R in formula (II): nonylphenol group, n: 17) (Component C) Water [pure water of 1 μS / cm or less produced using the Organo Corporation G-10DSTSET water purification system]

[0052] 2.Measuring methods for each parameter [pH of cleaning composition] The pH of the cleaning composition at 25°C was measured using a pH meter (HM-30G, manufactured by Toa Denpa Kogyo Co., Ltd.), and was the value measured 3 minutes after immersing the electrodes of the pH meter in the cleaning composition.

[0053] 3. Evaluation of cleaning composition The prepared cleaning compositions of Examples 1 to 5 and Comparative Examples 1 to 8 were evaluated as follows.

[0054] [Preparation of test pieces with resin masks] A negative photosensitive film for forming a circuit on a PKG (semiconductor package) substrate was laminated onto the surface of the substrate after electroless plating under the conditions below, and then exposed to light to harden it (exposure process), thereby obtaining a substrate (test piece, 30 mm x 30 mm) with a resin mask (hardened resist film: acrylic acid-based polymer film, thickness 240 μm). (1) Lamination: Using a clean roller (RY-505Z, manufactured by Rayon Kogyo Co., Ltd.) and a vacuum applicator (VA7024 / HP5, manufactured by Rohm and Haas Co.), the roller temperature was 50° C. and the roller pressure was 1.4 Bar. (2) Exposure: A direct imaging device for printed circuit boards (Mercurex LI-9500, manufactured by SCREEN Graphic and Precision Solutions Co., Ltd.) was used, and the exposure dose was 15 mJ / cm 2 The exposure is performed. [Preparation of test pieces with passivation film] A polybenzoxazole (PBO) precursor was spin-coated onto the wafer, patterned, and then cured by heat treatment. Test pieces (10 mm x 10 mm) with a passivation film (PBO film, 10 μm thick) were obtained by dicing.

[0055] [Evaluation of resin mask peelability] 100 g of each of the cleaning compositions of Examples 1 to 5 and Comparative Examples 1 to 8 was added to a tall 200 mL glass beaker and heated to 60°C. A test piece with a resin mask (240 μm thick) was immersed in the mixture while stirring at 300 rpm using a rotor (fluororesin (PTFE), φ8 mm × 25 mm). The time until the resin mask was peeled off was measured and evaluated according to the following criteria. <Evaluation criteria> A: The resin mask peels off within 60 minutes and no residue is visible. B: Peeling of the resin mask progresses within more than 60 minutes and within 120 minutes, and no residue is observed. C: Peeling residue is observed even after 120 minutes.

[0056] [Evaluation of damage to passivation film] 100 g of each of the cleaning compositions from Examples 1 to 5 and Comparative Examples 1 to 8 was added to a tall 200 mL glass beaker and heated to 60°C. A test piece having a passivation film (PBO film, 10 μm thick) was immersed in the beaker for 60 minutes. The test piece was then rinsed by immersing it in a rinsing bath containing 100 g of water in a 100 mL glass beaker, and then dried with nitrogen blow. The shape of the passivation film was visually observed and evaluated according to the following criteria. <Evaluation criteria> A: No change was observed. B: Wrinkles are observed in some parts of the passivation film. C: Wrinkles are observed throughout the entire passivation film. D: Missing passivation film is observed.

[0057] [Table 1]

[0058] As shown in Table 1, the cleaning compositions of Examples 1 to 5 were found to cause less damage to the passivation film and to have excellent resin mask stripping properties compared to Comparative Example 1, which did not contain component B; Comparative Example 2, which did not contain component A; Comparative Example 3, which did not contain component B; Comparative Examples 4 to 6, which contained non-component B as a surfactant; Comparative Example 7, which contained non-component A as an alkaline agent and did not contain component B; and Comparative Example 8, which contained non-component A as an alkaline agent and non-component B as a surfactant. [Industrial Applicability]

[0059] According to the present disclosure, a resin mask stripping method can be provided that has excellent resin mask stripping properties and can suppress damage to passivation films. Use of the stripping method of the present disclosure can improve the performance and reliability of electronic components, thereby improving the productivity of semiconductor devices.

Claims

1. a step of removing the resin mask from a substrate having a passivation film and a resin mask formed on the passivation film by using a cleaning agent composition; the resin mask is a thick-film resin mask having a thickness of 100 μm or more and 250 μm or less, The cleaning composition is an aqueous cleaning agent containing the following component A, the following component B, and the following component C, The component A contains at least one of tetramethylammonium hydroxide and monoethanolamine, The method for removing a thick-film resin mask formed on a passivation film, wherein the content of component C in the cleaning composition is 65 mass % or more. Component A: at least one alkaline agent selected from tetramethylammonium hydroxide and amines Component B: A surfactant represented by R-O-(EO)n-H (wherein R represents a linear or branched hydrocarbon group having from 8 to 22 carbon atoms, EO represents an ethyleneoxy group, and n represents the average number of moles of EO added, which is from 12 to 35). Component C: water

2. The stripping method according to claim 1, wherein the content of component B in the cleaning composition is 0.1% by mass or more and 5% by mass or less.

3. A peeling method described in claim 1 or 2, wherein the mass ratio (B / A) of the content of component B to the content of component A is 0.01 or more and 2 or less.

4. A peeling method described in any one of claims 1 to 3, wherein the amine in component A is one or more selected from hydroxylamine and amines represented by the following general formula (I): 【Chemistry 1】 In the above formula (I), R 1 represents a hydrogen atom, a methyl group, an ethyl group, or an aminoethyl group, R 2 represents at least one selected from a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group, or an ethyl group, and R 3 represents at least one selected from a hydroxy group, an aminoethyl group, a hydroxyethyl group, or a hydroxypropyl group, or in formula (I), R 1 represents at least one selected from a methyl group, an ethyl group, an aminoethyl group, a hydroxyethyl group, or a hydroxypropyl group, and R 2 and R 3 are bonded to each other to form a pyrrolidine ring or a piperazine ring together with the N atom in formula (I).

5. The amine in component A is hydroxylamine, alkanolamine, monoethanolamine, monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethylisopropanolamine, diethanolamine, triethanolamine, diisopropanolamine, N-dimethylmonoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N-diethylmonoethanolamine, N-diethanolamine, The peeling method according to any one of claims 1 to 4, wherein the amine is at least one selected from the group consisting of ethyl monoisopropanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N-(β-aminoethyl)ethanolamine, N-(β-aminoethyl)isopropanolamine, N-(β-aminoethyl)diethanolamine, N-(β-aminoethyl)diisopropanolamine, 1-methylpiperazine, 1-(2-hydroxyethyl)pyrrolidine, 1-(2-hydroxyethyl)piperazine, ethylenediamine, and diethylenetriamine.

6. 6. The stripping method according to claim 1, wherein the resin mask is a hardened resist film.

7. 7. The method according to claim 1, wherein the resin mask is an acrylic acid-based polymer film.

8. 8. The method according to claim 1, wherein the passivation film is a polymer film made of at least one kind selected from the group consisting of polyimide-based polymers, polybenzoxazole-based polymers, and silicone-based polymers.

9. 9. The stripping method according to claim 1, wherein the cleaning agent composition does not contain at least one component selected from the group consisting of organic solvents, anticorrosives, aliphatic amines other than alkanolamines, acidic organic compounds, octylic acid, fluorine compounds, oxoammonium compounds other than Component A, oxidizing agents, polyacrylic acid, acetonitrile, peroxides, hydrogen peroxides of quaternary ammonium salts, and alkyl diphenyl ether disulfonates.

10. The stripping method according to claim 1 , wherein the pH of the cleaning composition is 11 or more and 14 or less.

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