Detection device

Abstract

To provide a detection device capable of dealing with the change in positional relation between an optical sensor and a detection object.SOLUTION: A detection device includes a plurality of optical sensors disposed planarly. The output change of each of the optical sensors in a predetermined period is acquired. A first optical sensor whose output change in the predetermined period is the largest is specified. The output of the first optical sensor that is specified is defined as pulse wave data.SELECTED DRAWING: Figure 17

Description

[Technical Field]

[0001] The present invention relates to a detection device. [Background technology]

[0002] Optical sensors capable of detecting fingerprint patterns and vein patterns are known (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-32005 Summary of the Invention [Problem to be solved by the invention]

[0004] During detection by the optical sensor, a positional misalignment may occur between the optical sensor and biological tissue. From the viewpoint of ensuring the detection accuracy of the optical sensor even when such a positional misalignment occurs, there has been a demand for a detection device that can respond to changes in the positional relationship between the optical sensor and the object to be detected.

[0005] An object of the present invention is to provide a detection device that can accommodate changes in the positional relationship between an optical sensor and an object to be detected. [Means for solving the problem]

[0006] A detection device according to one embodiment of the present invention has a plurality of optical sensors arranged in a plane, and the change in output of each of the optical sensors is acquired over a predetermined period of time, a first optical sensor having the largest change in output over the predetermined period is identified, and the output of the identified first optical sensor is used as pulse wave data. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view showing a detection device according to the first embodiment. [Figure 2] FIG. 2 is a block diagram showing an example of the configuration of the detection device according to the first embodiment. [Figure 3] FIG. 3 is a circuit diagram showing the detection device. [Figure 4] FIG. 4 is a circuit diagram showing a plurality of partial detection areas. [Figure 5A] FIG. 5A is an enlarged schematic diagram of the sensor unit. [Figure 5B] FIG. 5B is a cross-sectional view taken along line QQ of FIG. 5A. [Figure 6] FIG. 6 is a graph schematically showing the relationship between the wavelength of light incident on a photodiode and the conversion efficiency. [Figure 7] FIG. 7 is a timing waveform diagram showing an example of the operation of the detection device. [Figure 8] FIG. 8 is a timing waveform diagram showing an example of operation during the readout period in FIG. [Figure 9] FIG. 9 is an explanatory diagram for explaining the relationship between the driving of the sensor unit of the detection device and the lighting operation of the light source. [Figure 10] FIG. 10 is an explanatory diagram for explaining the relationship between the driving of the sensor unit and the lighting operation of the light source according to the first modified example of the first embodiment. [Figure 11] FIG. 11 is a diagram schematically illustrating the relationship between the sensor unit, the first light source, and the second light source in the detection device according to the first embodiment. [Figure 12] FIG. 12 is a diagram schematically illustrating the relationship between the sensor unit, the first light source, and the second light source in the detection device according to the first embodiment. [Figure 13] FIG. 13 is a schematic diagram showing an example of the positional relationship between the second light source, the sensor unit, and blood vessels in the finger. [Figure 14] FIG. 14 is a schematic diagram showing a plurality of positions exemplarily set within photodiodes in a planar view of a planar detection region formed by a plurality of photodiodes provided so as to face a finger. [Figure 15] FIG. 15 is a graph showing an example of changes over time in detection signals acquired at the multiple positions shown in FIG. [Figure 16]FIG. 16 is a time chart for explaining the relationship between a predetermined period and the output from a photodiode identified in the focus process. [Figure 17] FIG. 17 is a flowchart showing an example of the flow of processing related to the output of pulse wave data in the first embodiment. [Figure 18] FIG. 18 is a schematic diagram for explaining the control of acquiring pulse wave data in group area units. [Figure 19] FIG. 19 is a schematic diagram for explaining the control of acquiring pulse wave data in group area units. [Figure 20] FIG. 20 is an explanatory diagram showing an example of averaging processing of outputs from a plurality of partial detection regions. [Figure 21] FIG. 21 is a flowchart showing an example of the flow of processing related to the output of pulse wave data in the second embodiment. [Figure 22] FIG. 22 is a flowchart showing an example of the flow of processing related to the output of pulse wave data in the third and fourth embodiments. [Figure 23] FIG. 23 is a flowchart showing an example of the flow of the initial processing of FIG. [Figure 24] FIG. 24 is a flowchart showing an example of the flow of the positional deviation handling process of FIG. 22 according to the third embodiment. [Figure 25] FIG. 25 is a flowchart showing an example of the procedure of the positional deviation handling process of FIG. 22 in a modified example of the third embodiment. [Figure 26] FIG. 26 is a flowchart showing an example of the flow of the positional deviation handling process of FIG. 22 according to the fourth embodiment. [Figure 27] FIG. 27 is a flowchart showing an example of the procedure of the positional deviation handling process of FIG. 22 in a modified example of the fourth embodiment. [Figure 28] FIG. 28 is a schematic diagram showing an example of the main configuration of a detection device that can be worn on the wrist. [Figure 29] FIG. 29 is a schematic diagram showing an example of blood vessel detection by the detection device shown in FIG. [Figure 30]FIG. 30 is a diagram showing a configuration example in which a lens is provided between a finger and a sensor unit. [Figure 31] FIG. 31 is a schematic diagram showing an example of the main configuration of a mutual capacitance type sensor. [Figure 32] FIG. 32 is a schematic diagram showing an example of the main configuration of a self-capacitance type sensor. [Figure 33] FIG. 33 is a diagram showing an example of the arrangement of the sensor unit of the detection device mounted on the bandana. [Figure 34] FIG. 34 is a diagram showing an example of the arrangement of the sensor unit of the detection device mounted on clothing. [Figure 35] FIG. 35 is a diagram showing an example of the arrangement of the sensor unit of the detection device mounted on the adhesive sheet. DETAILED DESCRIPTION OF THE INVENTION

[0008] Modes for carrying out the invention (embodiments) will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially identical. Furthermore, the components described below can be combined as appropriate. Note that the disclosure is merely an example, and any appropriate modifications that a person skilled in the art can easily conceive while maintaining the gist of the invention are naturally included within the scope of the present invention. Furthermore, for clarity of explanation, the drawings may show the width, thickness, shape, etc. of each part schematically compared to the actual embodiment. However, these are merely examples and are not intended to limit the interpretation of the present invention. Furthermore, in this specification and each figure, elements similar to those previously described with reference to the preceding figures are designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0009] (Embodiment 1) Fig. 1 is a plan view showing a detection device according to embodiment 1. As shown in Fig. 1, the detection device 1 includes a sensor substrate 21, a sensor unit 10, a gate line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source substrate 51, a second light source substrate 52, at least one first light source 61, and at least one second light source 62.

[0010] A control board 121 is electrically connected to the sensor substrate 21 via a flexible printed circuit board 71. The flexible printed circuit board 71 is provided with a detection circuit 48. The control board 121 is provided with a control circuit 122 and a power supply circuit 123. The control circuit 122 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 122 supplies control signals to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. The control circuit 122 also supplies control signals to the first light source 61 and the second light source 62 to control the lighting or non-lighting of the first light source 61 and the second light source 62. The power supply circuit 123 also supplies voltage signals, such as a sensor power supply signal VDDSNS (see FIG. 4), to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16. The power supply circuit 123 also supplies a power supply voltage to the first light source 61 and the second light source 62.

[0011] The sensor substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area where a plurality of photodiodes PD (see FIG. 4) of the sensor unit 10 are provided. The peripheral area GA is an area between the outer periphery of the detection area AA and the edge of the sensor substrate 21, and is an area that does not overlap with the photodiodes PD.

[0012] The gate line driving circuit 15 and the signal line selection circuit 16 are provided in the peripheral area GA. Specifically, the gate line driving circuit 15 is provided in a region of the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in a region of the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0013] The first direction Dx is a direction in a plane parallel to the sensor substrate 21. The second direction Dy is a direction in a plane parallel to the sensor substrate 21 and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect with the first direction Dx without being perpendicular to it. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy and is a normal direction to the sensor substrate 21.

[0014] The plurality of first light sources 61 are provided on the first light source substrate 51 and arranged along the second direction Dy. The plurality of second light sources 62 are provided on the second light source substrate 52 and arranged along the second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control board 121, respectively.

[0015] The plurality of first light sources 61 and the plurality of second light sources 62 may be, for example, inorganic light-emitting diodes (LEDs) or organic light-emitting diodes (OLEDs). The plurality of first light sources 61 and the plurality of second light sources 62 emit first light L61 and second light L62 (see FIG. 11, etc.) having different wavelengths, respectively. The first light L61 and the second light L62 have different maximum emission wavelengths. The maximum emission wavelength is the wavelength that exhibits the maximum emission intensity in an emission spectrum that indicates the relationship between the wavelength and emission intensity of each of the first light L61 and the second light L62. Hereinafter, when a numerical value for a wavelength is simply stated, it is assumed to indicate the assumed maximum emission wavelength.

[0016] The first light L61 emitted from the first light source 61 is mainly reflected by the surface of the object to be detected, such as a finger Fg, and enters the sensor unit 10. This allows the sensor unit 10 to detect the shape of the projections and recesses on the surface of the finger Fg, etc., thereby detecting a fingerprint. The second light L62 emitted from the second light source 62 is mainly reflected by the inside of the finger Fg, etc., or passes through the finger Fg, etc., and enters the sensor unit 10. This allows the sensor unit 10 to detect information about the living body inside the finger Fg, etc. The information about the living body includes, for example, the pulse wave, pulse rate, and blood vessel image of the finger Fg or palm.

[0017] As an example, the first light L61 may have a wavelength of 520 nm or more and 600 nm or less, and the second light L62 may have a wavelength of 780 nm or more and 900 nm or less, for example, approximately 850 nm. In this case, the first light L61 is blue or green visible light, and the second light L62 is infrared light. The sensor unit 10 can detect a fingerprint based on the first light L61 emitted from the first light source 61. The second light L62 emitted from the second light source 62 is reflected from the inside of the detection object such as a finger Fg or transmitted through or absorbed by the finger Fg or the like, and then enters the sensor unit 10. This allows the sensor unit 10 to detect a pulse wave or a blood vessel image (blood vessel pattern) as information about the living body inside the finger Fg or the like.

[0018] Alternatively, the first light L61 may have a wavelength of 600 nm or more and 700 nm or less, for example, approximately 660 nm, and the second light L62 may have a wavelength of 780 nm or more and 900 nm or less, for example, approximately 850 nm. In this case, the sensor unit 10 can detect information about the living body, such as the pulse rate and blood vessel image, as well as blood oxygen saturation, based on the first light L61 emitted from the first light source 61 and the second light L62 emitted from the second light source 62. In this way, the detection device 1 has the first light source 61 and multiple second light sources 62, and therefore can detect various pieces of information about the living body by performing detection based on the first light L61 and detection based on the second light L62.

[0019] 1 is merely an example and can be modified as appropriate. For example, a plurality of first light sources 61 and a plurality of second light sources 62 may be arranged on each of the first light source substrate 51 and the second light source substrate 52. In this case, a group including a plurality of first light sources 61 and a group including a plurality of second light sources 62 may be arranged side by side in the second direction Dy, or the first light sources 61 and the second light sources 62 may be arranged alternately in the second direction Dy. Furthermore, the number of light source substrates on which the first light sources 61 and the second light sources 62 are provided may be one or three or more.

[0020] 2 is a block diagram showing an example of the configuration of the detection device according to embodiment 1. As shown in FIG. 2, the detection device 1 further includes a detection control unit 11 and a detection unit 40. Some or all of the functions of the detection control unit 11 are included in a control circuit 122. In addition, some or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 122.

[0021] The sensor unit 10 is an optical sensor having a photodiode PD, which is a photoelectric conversion element. The photodiode PD of the sensor unit 10 outputs an electrical signal corresponding to the incident light to a signal line selection circuit 16. The signal line selection circuit 16 sequentially selects the signal lines SGL in accordance with a selection signal ASW from the detection control unit 11. As a result, the electrical signal is output to the detection unit 40 as a detection signal Vdet. In addition, the sensor unit 10 performs detection in accordance with a gate drive signal Vgcl supplied from a gate line drive circuit 15.

[0022] The detection control unit 11 is a circuit that supplies control signals to the gate line driving circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control unit 11 supplies various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST1, to the gate line driving circuit 15. The detection control unit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16. The detection control unit 11 also supplies various control signals to the first light source 61 and the second light source 62, and controls the lighting and non-lighting of each.

[0023] The gate line driving circuit 15 is a circuit that drives multiple gate lines GCL (see FIG. 3) based on various control signals. The gate line driving circuit 15 selects the multiple gate lines GCL sequentially or simultaneously and supplies a gate driving signal Vgcl to the selected gate lines GCL. In this way, the gate line driving circuit 15 selects multiple photodiodes PD connected to the gate lines GCL.

[0024] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SGL (see FIG. 3). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected signal line SGL to the detection circuit 48 based on a selection signal ASW supplied from the detection control unit 11. As a result, the signal line selection circuit 16 outputs a detection signal Vdet of the photodiode PD to the detection unit 40.

[0025] The detection unit 40 includes a detection circuit 48, a signal processing unit 44, a coordinate extraction unit 45, a storage unit 46, a detection timing control unit 47, an image processing unit 49, and an output processing unit 50. Based on a control signal supplied from the detection control unit 11, the detection timing control unit 47 controls the detection circuit 48, the signal processing unit 44, the coordinate extraction unit 45, and the image processing unit 49 so that they operate in synchronization.

[0026] The detection circuit 48 is, for example, an analog front end (AFE) circuit. The detection circuit 48 is, for example, a signal processing circuit having the functions of a detection signal amplifier 42 and an A / D converter 43. The detection signal amplifier 42 amplifies the detection signal Vdet. The A / D converter 43 converts the analog signal output from the detection signal amplifier 42 into a digital signal.

[0027] The signal processing unit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When the finger Fg is in contact with or in proximity to the detection area AA, the signal processing unit 44 can detect unevenness on the surface of the finger Fg or palm based on the signal from the detection circuit 48. The signal processing unit 44 can also detect information about the living body based on the signal from the detection circuit 48. The information about the living body includes, for example, an image of the blood vessels of the finger Fg or palm, a pulse wave, a pulse rate, and blood oxygen saturation.

[0028] To obtain a person's blood oxygen saturation, for example, 660 nm (500 nm to 700 nm) is used as the first light L61, and approximately 850 nm (800 nm to 930 nm) is used as the second light L62. Because the amount of light absorption varies depending on the amount of oxygen absorbed by hemoglobin, the photodiode PD detects the amount of light obtained by subtracting the amount of light absorbed by the blood (hemoglobin) from the amount of light emitted by the first light L61 and second light L62. Most of the oxygen in blood is reversibly bound to hemoglobin in red blood cells, with a small portion dissolved in plasma. More specifically, the percentage of oxygen bound to the blood's overall capacity is called the oxygen saturation (SpO2). Using the two wavelengths of the first light L61 and the second light L62, blood oxygen saturation can be calculated from the amount of light emitted minus the amount of light absorbed by the blood (hemoglobin).

[0029] The signal processing unit 44 may also acquire detection signals Vdet (biological information) simultaneously detected by a plurality of photodiodes PD and average these signals. In this case, the detection unit 40 can suppress measurement errors caused by noise and relative positional deviation between the sensor unit 10 and the object to be detected, such as a finger Fg, thereby enabling stable detection.

[0030] The storage unit 46 temporarily stores the signals calculated by the signal processing unit 44. The storage unit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0031] The coordinate extraction unit 45 is a logic circuit that determines the detected coordinates of the unevenness of the surface of the finger or the like when the signal processing unit 44 detects contact or proximity of a finger. The coordinate extraction unit 45 is also a logic circuit that determines the detected coordinates of the blood vessels of the finger Fg or the palm. The image processing unit 49 combines the detection signals Vdet output from each photodiode PD of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger Fg or the like and two-dimensional information indicating the shape of the blood vessels of the finger Fg or the palm. Note that the coordinate extraction unit 45 and the image processing unit 49 may be omitted.

[0032] The output processing unit 50 functions as a processing unit that performs processing based on outputs from multiple photodiodes PD. Specifically, the output processing unit 50 of the embodiment outputs a sensor output Vo that includes at least pulse wave data based on at least a detection signal Vdet acquired via the signal processing unit 44. In the embodiment, the signal processing unit 44 outputs data indicating changes (amplitudes) in the output of the detection signal Vdet of each photodiode PD (described later), and the output processing unit 50 determines which output is to be used as the sensor output Vo. However, both of these functions may be performed by the signal processing unit 44 or the output processing unit 50. Note that the output processing unit 50 may include the detection coordinates calculated by the coordinate extraction unit 45, the two-dimensional information generated by the image processing unit 49, and the like in the sensor output Vo. Furthermore, the function of the output processing unit 50 may be integrated into another component (e.g., the image processing unit 49, etc.).

[0033] Furthermore, when a pulse wave or other detection device is attached to the human body, noise caused by breathing, changes in posture, and human movement is also detected. Therefore, the signal processing unit 44 may be provided with a noise filter as needed. The frequency components of noise caused by breathing and changes in posture are, for example, 1 Hz or less, which is sufficiently lower than the frequency components of the pulse wave. Therefore, they can be removed using a band-pass filter as a noise filter. The band-pass filter may be provided, for example, in the detection signal amplifier 42. The frequency components of noise caused by human movement, for example, are, for example, several Hz to 100 Hz, and may overlap with the frequency components of the pulse wave. However, in this case, the frequency is not constant but fluctuates, so a noise filter that removes frequencies with fluctuating components is used. As an example of a method for removing frequencies with fluctuating components (first fluctuation component removal method), it is possible to utilize the property that a time lag occurs in the peak value of a pulse wave depending on the measurement location on the human body. In other words, a time lag occurs with pulse waves depending on the measurement location on the human body, while noise caused by human movement, etc., does not have a time lag or has a smaller time lag than the pulse wave. Therefore, the pulse wave is measured at at least two different locations, and if the peak values ​​measured at the different locations are within a predetermined time, they are removed as noise. Even in this case, it is possible for the waveform due to noise and the waveform due to the pulse wave to overlap by chance. In this case, the two waveforms overlap only at one of the different locations, making it possible to distinguish between the waveform due to noise and the waveform due to the pulse wave. This process can be performed, for example, by the signal processing unit 44. Another example of a method for removing frequencies containing fluctuation components (a second fluctuation component removal method) is to remove frequency components with different phases in the signal processing unit 44. In this case, for example, a short-time Fourier transform may be performed to remove the fluctuation components, followed by an inverse Fourier transform. Furthermore, commercial frequency power sources (50 Hz, 60 Hz) are also a noise source. However, in this case, similar to noise caused by human movement, there is either no time lag between the peak values ​​measured at the different locations or the time lag is smaller than that caused by the pulse wave. Therefore, noise can be removed using a method similar to the first fluctuation component removal method described above.Alternatively, noise generated by the commercial frequency power supply may be removed by providing a shield on the surface of the detector opposite to the detection surface.

[0034] Next, an example of the circuit configuration of the detection device 1 will be described. Fig. 3 is a circuit diagram showing the detection device. Fig. 4 is a circuit diagram showing a plurality of partial detection areas. Note that Fig. 4 also shows the circuit configuration of a detection circuit 48.

[0035] 3, the sensor unit 10 has a plurality of partial detection areas PAA arranged in a matrix. A photodiode PD is provided in each of the partial detection areas PAA.

[0036] The gate lines GCL extend in a first direction Dx and are connected to a plurality of partial detection areas PAA arranged in the first direction Dx. Furthermore, a plurality of gate lines GCL(1), GCL(2), ..., GCL(8) are arranged in a second direction Dy and are each connected to a gate line driving circuit 15. In the following description, when it is not necessary to distinguish between the plurality of gate lines GCL(1), GCL(2), ..., GCL(8), they will simply be referred to as gate lines GCL. Furthermore, for ease of understanding, eight gate lines GCL are shown in FIG. 3, but this is merely an example, and M gate lines GCL (M is 8 or more, for example, M=256) may be arranged.

[0037] The signal line SGL extends in the second direction Dy and is connected to the photodiodes PD of the plurality of partial detection areas PAA arranged in the second direction Dy. The plurality of signal lines SGL(1), SGL(2), ..., SGL(12) are arranged in the first direction Dx and are each connected to the signal line selection circuit 16 and the reset circuit 17. In the following description, when it is not necessary to distinguish between the plurality of signal lines SGL(1), SGL(2), ..., SGL(12), they will simply be referred to as signal lines SGL.

[0038] For ease of understanding, 12 signal lines SGL are shown, but this is merely an example, and N signal lines SGL (N is 12 or more, for example, N=252) may be arranged. The resolution of the sensor is, for example, 508 dpi (dots per inch), and the number of cells is 252×256. In FIG. 3, the sensor unit 10 is provided between the signal line selection circuit 16 and the reset circuit 17. However, this is not limiting, and the signal line selection circuit 16 and the reset circuit 17 may be connected to the ends of the signal lines SGL in the same direction. The effective area of ​​one sensor is, for example, substantially 50×50 μm 2 The area of ​​the detection area AA is, for example, 12.6 × 12.8 mm 2 It is said that.

[0039] The gate line driving circuit 15 receives various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST1, from the control circuit 122 (see FIG. 1). Based on the various control signals, the gate line driving circuit 15 sequentially selects multiple gate lines GCL(1), GCL(2), ..., GCL(8) in a time-division manner. The gate line driving circuit 15 supplies a gate driving signal Vgcl to the selected gate line GCL. As a result, the gate driving signal Vgcl is supplied to multiple first switching elements Tr connected to the gate line GCL, and multiple partial detection areas PAA arranged in the first direction Dx are selected as detection targets.

[0040] The gate line driving circuit 15 may perform different driving for each detection mode of a fingerprint and a plurality of different pieces of biological information (pulse wave, pulse, blood vessel image, blood oxygen saturation, etc.) For example, the gate line driving circuit 15 may drive a plurality of gate lines GCL in a bundle.

[0041] Specifically, the gate line driving circuit 15 may simultaneously select a predetermined number of gate lines GCL from among the gate lines GCL(1), GCL(2), ..., GCL(8) based on a control signal. For example, the gate line driving circuit 15 simultaneously selects six gate lines GCL(1) to GCL(6) and supplies the gate driving signal Vgcl to the gate lines. The gate line driving circuit 15 supplies the gate driving signal Vgcl to a plurality of first switching elements Tr via the selected six gate lines GCL. As a result, group regions PAG1 and PAG2, each including a plurality of partial detection regions PAA arranged in the first direction Dx and the second direction Dy, are selected as detection targets. The gate line driving circuit 15 drives a predetermined number of gate lines GCL together and sequentially supplies the gate driving signal Vgcl to each of the predetermined number of gate lines GCL. Hereinafter, when there is no particular distinction between the positions of different group regions such as the group regions PAG1 and PAG2, they will be referred to as group regions PAG.

[0042] The signal line selection circuit 16 has a plurality of selection signal lines Lsel, a plurality of output signal lines Lout, and a third switching element TrS. The plurality of third switching elements TrS are provided corresponding to the plurality of signal lines SGL, respectively. The six signal lines SGL(1), SGL(2), ..., SGL(6) are connected to a common output signal line Lout1. The six signal lines SGL(7), SGL(8), ..., SGL(12) are connected to a common output signal line Lout2. The output signal lines Lout1 and Lout2 are each connected to a detection circuit 48.

[0043] Here, the signal lines SGL(1), SGL(2), ..., SGL(6) are defined as a first signal line block, and the signal lines SGL(7), SGL(8), ..., SGL(12) are defined as a second signal line block. The multiple selection signal lines Lsel are connected to the gates of the third switching elements TrS included in one signal line block. Furthermore, one selection signal line Lsel is connected to the gates of the third switching elements TrS of multiple signal line blocks.

[0044] Specifically, the selection signal lines Lsel1, Lsel2, ..., Lsel6 are connected to the third switching elements TrS corresponding to the signal lines SGL(1), SGL(2), ..., SGL(6), respectively. The selection signal line Lsel1 is connected to the third switching element TrS corresponding to the signal line SGL(1) and the third switching element TrS corresponding to the signal line SGL(7). The selection signal line Lsel2 is connected to the third switching element TrS corresponding to the signal line SGL(2) and the third switching element TrS corresponding to the signal line SGL(8).

[0045] The control circuit 122 (see FIG. 1) sequentially supplies the selection signal ASW to the selection signal line Lsel. As a result, the signal line selection circuit 16 sequentially selects the signal lines SGL in one signal line block in a time-division manner through the operation of the third switching element TrS. The signal line selection circuit 16 also selects one signal line SGL from each of the multiple signal line blocks. With this configuration, the detection device 1 can reduce the number of ICs (Integrated Circuits) including the detection circuit 48 or the number of IC terminals.

[0046] The signal line selection circuit 16 may bundle multiple signal lines SGL and connect them to the detection circuit 48. Specifically, the control circuit 122 (see FIG. 1) simultaneously supplies selection signals ASW to the selection signal lines Lsel. As a result, the signal line selection circuit 16 selects multiple signal lines SGL (e.g., six signal lines SGL) in one signal line block through the operation of the third switching element TrS, and connects the multiple signal lines SGL to the detection circuit 48. As a result, signals detected in each group area PAG are output to the detection circuit 48. In this case, signals from multiple partial detection areas PAA (photodiodes PD) are integrated for each group area PAG and output to the detection circuit 48.

[0047] By performing detection for each group area PAG through the operation of the gate line driving circuit 15 and the signal line selection circuit 16, the strength of the detection signal Vdet obtained in one detection is improved, thereby improving the sensor sensitivity. Furthermore, the time required for detection can be shortened. Therefore, the detection device 1 can repeatedly perform detection in a short time, improving the S / N ratio and enabling accurate detection of temporal changes in information related to a living body, such as pulse waves.

[0048] 3, the reset circuit 17 includes a reference signal line Lvr, a reset signal line Lrst, and a fourth switching element TrR. The fourth switching element TrR is provided corresponding to the plurality of signal lines SGL. The reference signal line Lvr is connected to one of the sources or drains of the plurality of fourth switching elements TrR. The reset signal line Lrst is connected to the gates of the plurality of fourth switching elements TrR.

[0049] The control circuit 122 supplies a reset signal RST2 to the reset signal line Lrst. This turns on the multiple fourth switching elements TrR, and the multiple signal lines SGL are electrically connected to the reference signal line Lvr. The power supply circuit 123 supplies a reference signal COM to the reference signal line Lvr. This causes the reference signal COM to be supplied to the capacitive elements Ca (see FIG. 4) included in the multiple partial detection areas PAA.

[0050] As shown in FIG. 4, the partial detection area PAA includes a photodiode PD, a capacitance element Ca, and a first switching element Tr. In FIG. 4, two gate lines GCL(m) and GCL(m+1) arranged in the second direction Dy are shown among the multiple gate lines GCL. Also shown are two signal lines SGL(n) and SGL(n+1) arranged in the first direction Dx among the multiple signal lines SGL. The partial detection area PAA is an area surrounded by the gate lines GCL and the signal lines SGL. The first switching element Tr is provided corresponding to the photodiode PD. The first switching element Tr is formed of a thin-film transistor, and in this example, is formed of an n-channel MOS (Metal Oxide Semiconductor) TFT (Thin Film Transistor).

[0051] The gates of the first switching elements Tr belonging to the partial detection areas PAA aligned in the first direction Dx are connected to the gate line GCL, the sources of the first switching elements Tr belonging to the partial detection areas PAA aligned in the second direction Dy are connected to the signal line SGL, and the drains of the first switching elements Tr are connected to the cathodes of the photodiodes PD and the capacitance elements Ca.

[0052] A sensor power supply signal VDDSNS is supplied to the anode of the photodiode PD from the power supply circuit 123. In addition, a reference signal COM, which becomes the initial potential of the signal line SGL and the capacitance element Ca, is supplied from the power supply circuit 123 to the signal line SGL and the capacitance element Ca.

[0053] When light is irradiated onto the partial detection area PAA, a current corresponding to the amount of light flows through the photodiode PD, causing charge to accumulate in the capacitance element Ca. When the first switching element Tr is turned on, a current corresponding to the charge accumulated in the capacitance element Ca flows through the signal line SGL. The signal line SGL is connected to the detection circuit 48 via the third switching element TrS of the signal line selection circuit 16. This allows the detection device 1 to detect a signal corresponding to the amount of light irradiated onto the photodiode PD for each partial detection area PAA or for each group area PAG.

[0054] In the detection circuit 48, the switch SSW is turned on during the readout period Pdet (see FIG. 7), and the detection circuit 48 is connected to the signal line SGL. The detection signal amplifier 42 of the detection circuit 48 converts fluctuations in current supplied from the signal line SGL into fluctuations in voltage and amplifies the voltage. A reference potential (Vref) having a fixed potential is input to the non-inverting input terminal (+) of the detection signal amplifier 42, and the signal line SGL is connected to the inverting input terminal (-). In the first embodiment, a signal identical to the reference signal COM is input as the reference potential (Vref). The detection signal amplifier 42 also has a capacitance element Cb and a reset switch RSW. In the reset period Prst (see FIG. 7), the reset switch RSW is turned on, and the charge of the capacitance element Cb is reset.

[0055] Next, an outline of a manufacturing method for the sensor section 10 and a process for forming the photodiode PD (OPD formation process) will be described. Fig. 5A is an enlarged schematic diagram of the sensor section 10. Fig. 5B is a cross-sectional view taken along line QQ of Fig. 5A.

[0056] (Outline of manufacturing method) A manufacturing method for the sensor unit 10 will now be outlined. A backplane BP including LTPS (Low Temperature Polysilicon) 22 is formed on an undercoat 26, a light-shielding layer 27, and an insulator, which are layered on a polyimide film 25 formed on a sensor substrate 21. The polyimide 25 has a thickness of, for example, 10 μm. The device for forming the backplane BP is peeled off from the sensor substrate by LLO (Laser Lift Off) after all processes for forming the backplane BP are completed. The backplane BP functions as a first switching element Tr. Note that, in the embodiment, LTPS 22 is used as the semiconductor layer, but this is not limited thereto and other semiconductors such as amorphous silicon may also be used.

[0057] Each first switching element Tr is composed of a double-gate TFT in which two NMOS transistors are connected. The NMOS transistors have, for example, a channel length of 4.5 μm, a channel width of 2.5 μm, and a mobility of approximately 40 to 70 cm.2 / Vs. The formation of LTPS TFTs involves first depositing a film using four materials: silicon monoxide (SiO), silicon nitride (SiN), SiO, and amorphous silicon (a-Si). The a-Si is then crystallized by annealing with an excimer laser to form polysilicon. The surrounding driver circuitry is formed as a CMOS (Complementary MOS) circuit consisting of a PMOS transistor and an NMOS transistor. The PMOS transistor, for example, has a channel length of 4.5 μm, a channel width of 3.5 μm, and a mobility of approximately 40 to 70 cm. 2 / Vs. The NMOS transistor has, for example, a channel length of 4.5 μm, a channel width of 2.5 μm, and a mobility of about 40 to 70 cm as described above. 2 After the polysilicon is formed, the PMOS and NMOS electrodes are formed by doping with boron (B) and phosphorus (P).

[0058] Then, SiO is deposited as the insulating film 23a, and MoW is deposited as the two gate electrodes GA and GB of the double-gate TFT. The thickness of the insulating film 23a is, for example, 70 nm. The thickness of the MoW for forming the gate electrodes GA and GB is, for example, 250 nm.

[0059] After the MoW film is formed, an intermediate film 23b is formed, followed by the electrode layer 28 for forming the source electrode 28a and the drain electrode 28b. The electrode layer 28 is made of, for example, an aluminum alloy. Vias V1 and V2 for connecting the source electrode 28a and the drain electrode 28b to the PMOS and NMOS electrodes of the LTPS 22 formed by doping are formed by dry etching. The insulating film 23a and the intermediate film 23b function as the insulating layer 23 that separates the gate electrodes GA and GB, which function as the gate lines GCL, from the LTPS 22 and the electrode layer 28.

[0060] The backplane BP thus formed includes the LTPS 22 laminated on the photodiode PD side of the light-shielding layer 27, and the electrode layer 28 laminated between the LTPS 22 and the photodiode PD, on which the source electrode 28a and drain electrode 28b of the first switching element Tr are formed. The source electrode 28a extends to a position facing the light-shielding layer 27 with the LTPS 22 sandwiched therebetween.

[0061] After the backplane BP is manufactured, a 2 μm thick smoothing layer 29 is formed on top to form an organic photodetector layer. Although not shown, a sealing film is further formed on the smoothing layer 29. In addition, vias V3 are formed by etching to connect the backplane BP to the photodiodes PD.

[0062] Next, an air-stable organic photodiode (OPD) with an inverted structure is formed on top of the backplane BP as the photodiode PD. The active layer 31 of the photodiode PD of the sensor unit 10, which is an organic sensor, uses a material that is sensitive to near-infrared light (e.g., light with a wavelength of 850 nm). ITO (Indium Tin Oxide) is used for the cathode electrode 35, which is a transparent electrode, and it is connected to the backplane BP through a via V3. Furthermore, although not shown, a zinc oxide (ZnO) layer 35a is formed on the surface of the ITO to adjust the work function of the electrode.

[0063] The organic photodiodes are fabricated as two separate devices using different types of organic semiconductor materials as the active layer. Specifically, two different organic semiconductor materials are used: PMDPP3T (Poly[[2,5-bis(2-hexyldecyl)-2,3,5,6-tetrahydro-3,6-dioxopyrrolo[3,4-c]pyrrole-1,4-diyl]-alt-[3',3''-dimethyl-2,2':5',2''-terthiophene]-5,5''-diyl]) and STD-001 (Sumitomo Chemical). Each material is phenyl C61 butyric acid methyl ester ([6,6]-Phenyl-C61 A bulk heterostructure is realized by mixing the organic photodiode with polythiophene-based conductive polymer (PEDOT:PSS) and silver (Ag) and depositing the mixture with butylic acid methyl ester (PCBM). Furthermore, a film of polythiophene-based conductive polymer (PEDOT:PSS) and silver (Ag) is deposited as the anode electrode 34. Although not shown, the organic photodiode is sealed with 1 μm-thick parylene, and a film of chromium and gold (Cr / Au) is deposited on top as a contact pad for connection to a flexible substrate on which an analog front end (AFE) is mounted.

[0064] Although parylene was used as the sealing film, silicon dioxide (SiO2) or silicon oxynitride (SiON) may also be used. For the anode electrode 34, 10 nm of PEDOT:PSS and 80 nm of Ag were laminated, but the film thickness may range from 10 to 30 nm for PEDOT:PSS and 10 to 100 nm for Ag. Alternative materials for PEDOT:PSS include molybdenum oxide (MoOx), and alternative materials for Ag include aluminum (Al) and gold (Au). For the cathode electrode 35, ZnO is formed on ITO, but polymers such as polyethyleneimine (PEI) and ethoxylated PEI (PEI Ethoxylation) may also be formed on ITO.

[0065] (OPD formation process) The chip surface is subjected to O2 plasma treatment at 300 W for 10 seconds. Next, a ZnO layer is formed by spin-coating at 5000 rpm for 30 seconds and annealed at 180 °C for 30 minutes. A PMDPP3T:PCBM solution or STD-001:PCBM solution is spin-coated onto the ZnO surface at 250 rpm for 4 minutes as an organic layer. Next, a solution of PEDOT:PSS (e.g., Al4083) diluted with isopropyl alcohol (IPA) at a ratio of 3:17 is filtered through a 0.45 μm PVDF filter in a nitrogen atmosphere, and then a film is formed by spin-coating at 2000 rpm for 30 seconds. After film formation, the film is annealed at 80 °C for 5 minutes in a nitrogen atmosphere. Finally, an 80 nm thick silver anode electrode 34 is vacuum-deposited. After the device is completed, a 1 μm thick parylene film is formed as a sealing film using the CVD (Chemical Vapor Deposition) method, and Cr / Au is vacuum-deposited as contact pads.

[0066] The photodiode PD formed by this process includes an active layer 31 made of an organic material having a photovoltaic effect, a cathode electrode 35 provided on the backplane BP side of the active layer 31, and an anode electrode 34 provided on the opposite side of the active layer 31 from the cathode electrode 35. A plurality of photodiodes PD (see FIGS. 3 and 4, etc.) are arranged along the detection surface of the sensor unit 10, which is configured to be able to detect light. The active layer 31 and the anode electrode 34 are continuous with each other along the detection surface (see FIG. 5B). That is, the cathode electrode 35 is provided independently for each photodiode PD, and the active layer 31 and the anode electrode 34 are continuous across the entire detection area AA.

[0067] Fig. 6 is a graph showing a relationship between the wavelength of light incident on a photodiode and the conversion efficiency. The horizontal axis of the graph shown in Fig. 6 represents the wavelength of light incident on the photodiode PD, and the vertical axis represents the external quantum efficiency of the photodiode PD. The external quantum efficiency is expressed, for example, as the ratio between the number of photons of light incident on the photodiode PD and the current flowing from the photodiode PD to an external detection circuit 48.

[0068] 6, the photodiode PD has good efficiency in a wavelength band of about 300 nm to 1000 nm. That is, the photodiode PD is sensitive to both the wavelengths of the first light L61 emitted from the first light source 61 and the second light L62 emitted from the second light source 62. Therefore, one photodiode PD can detect multiple lights having different wavelengths.

[0069] Next, an example of the operation of the detection device 1 will be described. FIG. 7 is a timing waveform diagram illustrating an example of the operation of the detection device. As shown in FIG. 7, the detection device 1 has a reset period Prst, an effective exposure period Pex, and a readout period Pdet. The power supply circuit 123 supplies a sensor power supply signal VDDSNS to the anode of the photodiode PD throughout the reset period Prst, the effective exposure period Pex, and the readout period Pdet. The sensor power supply signal VDDSNS is a signal that applies a reverse bias between the anode and cathode of the photodiode PD. For example, a reference signal COM of substantially 0.75 V is applied to the cathode of the photodiode PD. However, by applying a sensor power supply signal VDDSNS of substantially -1.25 V to the anode, the anode-cathode is reverse biased at substantially 2.0 V. Furthermore, when detecting a wavelength of 850 nm, applying a reverse bias of 2 V allows the photodiode PD to achieve a high sensitivity of 0.5 A / W to 0.7 A / W, preferably about 0.57 A / W. The photodiode characteristics are as follows: when a reverse bias of 2 V is applied, the dark current density is 1.0 × 10 -7 A / cm 2 and the output is effectively 2.9mW / cm 2When detecting light with a wavelength of 850 nm, the photocurrent density is 1.2 × 10 -3 A / cm 2 The external quantum efficiency (EQE) is approximately 1.0 when irradiated with light of 850 nm wavelength and a reverse bias of 2 V is applied. The control circuit 122 sets the reset signal RST2 to "H" and then supplies a start signal STV and a clock signal CK to the gate line drive circuit 15, starting the reset period Prst. During the reset period Prst, the control circuit 122 supplies a reference signal COM to the reset circuit 17 and turns on the fourth switching transistor TrR, which supplies a reset voltage, using the reset signal RST2. This causes the reference signal COM to be supplied to each signal line SGL as a reset voltage. The reference signal COM is set to, for example, 0.75 V.

[0070] During the reset period Prst, the gate line drive circuit 15 sequentially selects the gate lines GCL based on a start signal STV, a clock signal CK, and a reset signal RST1. The gate line drive circuit 15 sequentially supplies gate drive signals Vgcl {Vgcl(1) to Vgcl(M)} to the gate lines GCL. The gate drive signal Vgcl has a pulse waveform having a power supply voltage VDD, which is a high-level voltage, and a power supply voltage VSS, which is a low-level voltage. In FIG. 7, M (e.g., M=256) gate lines GCL are provided, and gate drive signals Vgcl(1), ..., Vgcl(M) are sequentially supplied to each gate line GCL, and the multiple first switching elements Tr are sequentially turned on row by row, and a reset voltage is supplied. For example, the voltage of 0.75V of the reference signal COM is supplied as the reset voltage.

[0071] As a result, during the reset period Prst, the capacitance elements Ca in all partial detection areas PAA are sequentially electrically connected to the signal line SGL and the reference signal COM is supplied. As a result, the charge accumulated in the capacitance of the capacitance elements Ca is reset. Note that it is also possible to reset the capacitance of some of the capacitance elements Ca in the partial detection area PAA by partially selecting the gate lines and signal lines SGL.

[0072] Examples of exposure timing include a gate line scanning exposure control method and a constant exposure control method. In the gate line scanning exposure control method, gate drive signals {Vgcl(1) to (M)} are sequentially supplied to all gate lines GCL connected to the photodiodes PD to be detected, and a reset voltage is supplied to all photodiodes PD to be detected. After that, when all gate lines GCL connected to the photodiodes PD to be detected become low voltage (the first switching element Tr is off), exposure begins and is performed during the effective exposure period Pex. After exposure ends, as described above, gate drive signals {Vgcl(1) to (M)} are sequentially supplied to the gate lines GCL connected to the photodiodes PD to be detected, and readout is performed during the readout period Pdet. In the constant exposure control method, it is also possible to control exposure during the reset period Prst and the readout period (constant exposure control). In this case, the effective exposure period Pex(1) begins after the gate drive signal Vgcl(M) is supplied to the gate lines GCL. Here, the effective exposure periods Pex{(1)...(M)} are the periods during which the photodiode PD charges the capacitance Ca. The actual effective exposure periods Pex(1),..., Pex(M) in the partial detection areas PAA corresponding to each gate line GCL have different start and end times. Each of the effective exposure periods Pex(1),..., Pex(M) begins during the reset period Prst when the gate drive signal Vgcl changes from the high-level power supply voltage VDD to the low-level power supply voltage VSS. Each of the effective exposure periods Pex(1),..., Pex(M) ends during the readout period Pdet when the gate drive signal Vgcl changes from the power supply voltage VSS to the power supply voltage VDD. The exposure times of the effective exposure periods Pex(1),..., Pex(M) are equal.

[0073] In the gate line scanning exposure control method, during the effective exposure period Pex, a current flows in each partial detection area PAA in response to light irradiated to the photodiode PD, and as a result, charge is accumulated in each capacitance element Ca.

[0074] Before the readout period Pdet starts, the control circuit 122 sets the reset signal RST2 to a low-level voltage. This stops the operation of the reset circuit 17. The reset signal may be set to a high-level voltage only during the reset period Prst. During the readout period Pdet, as in the reset period Prst, the gate line drive circuit 15 sequentially supplies gate drive signals Vgcl(1), ..., Vgcl(M) to the gate lines GCL.

[0075] Specifically, during period V(1), the gate line drive circuit 15 supplies a gate drive signal Vgcl(1) of a high-level voltage (power supply voltage VDD) to the gate line GCL(1). The control circuit 122 sequentially supplies selection signals ASW1, ..., ASW6 to the signal line selection circuit 16 while the gate drive signal Vgcl(1) is at the high-level voltage (power supply voltage VDD). As a result, the signal lines SGL of the partial detection area PAA selected by the gate drive signal Vgcl(1) are sequentially or simultaneously connected to the detection circuit 48. As a result, the detection signal Vdet is supplied to the detection circuit 48 for each partial detection area PAA. Note that the time from when the gate drive signal Vgcl(1) goes high until the supply of the first selection signal ASW1 begins is, for example, approximately 20 μs (substantially 20 μs), and the time during which each selection signal ASW1, ..., ASW6 is supplied is, for example, approximately 60 μs (substantially 60 μs). Such high-speed response is achieved with a mobility of approximately 40 cm 2 This can be achieved by using thin film transistors (TFTs) that use low temperature polysilicon (LTPS) with a capacitance of 1 / Vs.

[0076] Similarly, the gate line driving circuit 15 supplies high-level voltage gate driving signals Vgcl(2), ..., Vgcl(M-1), and Vgcl(M) to the gate lines GCL(2), ..., GCL(M-1), and GCL(M), respectively, during periods V(2), ..., V(M-1), and V(M). That is, the gate line driving circuit 15 supplies the gate driving signal Vgcl to the gate line GCL during each period V(1), V(2), ..., V(M-1), and V(M). During each period in which each gate driving signal Vgcl is at a high-level voltage, the signal line selection circuit 16 sequentially selects the signal lines SGL based on the selection signal ASW. The signal line selection circuit 16 sequentially connects each signal line SGL to one detection circuit 48. This allows the detection device 1 to output the detection signals Vdet for all partial detection areas PAA to the detection circuit 48 during the readout period Pdet.

[0077] 8 is a timing waveform diagram showing an example of operation during the drive period of one gate line included in the readout period Readout in FIG. 7. Below, with reference to FIG. 8, an example of operation during the supply period Readout of one gate drive signal Vgcl(j) in FIG. 7 will be described. In FIG. 7, the first gate drive signal Vgcl(1) is given the symbol for the supply period Readout, but the same applies to the other gate drive signals Vgcl(2), ..., Vgcl(M). j is a natural number from 1 to M.

[0078] As shown in FIG. 8 and FIG. 4, the output (V out) is reset to a reference potential (Vref) in advance. The reference potential (Vref) is a reset voltage, for example, 0.75V. Next, the gate drive signal Vgcl(j) goes high, turning on the first switching element Tr of the row, and the signal line SGL of each row goes to a voltage corresponding to the charge accumulated in the capacitance (capacitance element Ca) of the partial detection area PAA. After a period t1 has elapsed since the rising edge of the gate drive signal Vgcl(j), a period t2 occurs during which the selection signal ASW(k) goes high. When the selection signal ASW(k) goes high and the third switching element TrS turns on, the charge accumulated in the capacitance (capacitance element Ca) of the partial detection area PAA, which is connected to the detection circuit 48 via the third switching element TrS, increases the output (V out ) (see FIG. 4) changes to a voltage corresponding to the charge accumulated in the capacitance (capacitor element Ca) of the partial detection area PAA (period t3). In the example of FIG. 8, this voltage drops from the reset voltage as shown in period t3. After that, when the switch SSW is turned on (high level period t4 of the SSW signal), the charge accumulated in the capacitance (capacitor element Ca) of the partial detection area PAA moves to the capacitance (capacitor element Cb) of the detection signal amplifier 42 of the detection circuit 48, and the output voltage of the detection signal amplifier 42 becomes a voltage corresponding to the charge accumulated in the capacitor element Cb. At this time, the inverting input terminal of the detection signal amplifier 42 becomes the imaginary short potential of the operational amplifier, and therefore returns to the reference potential (Vref). The output voltage of the detection signal amplifier 42 is read out by the A / D converter 43. In the example of Fig. 8, the waveforms of the selection signals ASW(k), ASW(k+1), ... corresponding to the signal lines SGL of each column become high to sequentially turn on the third switching elements TrS, and similar operations are sequentially performed to sequentially read out the charges accumulated in the capacitances (capacitance elements Ca) of the partial detection areas PAA connected to the corresponding gate lines GCL. Note that ASW(k), ASW(k+1), ... in Fig. 8 correspond to, for example, any of ASW1 to ASW6 in Fig. 7.

[0079] Specifically, when a period t4 occurs in which the switch SSW is turned on, charge moves from the capacitance (capacitor Ca) of the partial detection area PAA to the capacitance (capacitor Cb) of the detection signal amplifier 42 of the detection circuit 48. At this time, the non-inverting input (+) of the detection signal amplifier 42 is biased to the reference potential (Vref) (for example, 0.75 [V]). Therefore, an imaginary short circuit occurs between the inputs of the detection signal amplifier 42, causing the output (V out ) also becomes the reference potential (Vref). The voltage of the capacitance element Cb becomes a voltage according to the charge accumulated in the capacitance (capacitance element Ca) of the partial detection area PAA where the third switching element TrS is turned on in response to the selection signal ASW(k). The output of the detection signal amplifier 42 becomes a voltage according to the charge accumulated in the capacitance (capacitance element Ca) of the partial detection area PAA where the third switching element TrS is turned on in response to the selection signal ASW(k). out ) becomes the reference potential (Vref), the capacitance becomes a capacitance according to the voltage of the capacitive element Cb, and this output voltage is read by the A / D conversion unit 43. The voltage of the capacitive element Cb is, for example, the voltage between two electrodes provided in the capacitor that constitutes the capacitive element Cb.

[0080] The period t1 is, for example, 20 μs, the period t2 is, for example, 60 μs, the period t3 is, for example, 44.7 μs, and the period t4 is, for example, 0.98 μs.

[0081] 7 and 8 show an example in which the gate line driving circuit 15 selects the gate lines GCL individually, but this is not limiting. The gate line driving circuit 15 may simultaneously select a predetermined number of gate lines GCL (two or more) and sequentially supply the gate driving signal Vgcl to each of the predetermined number of gate lines GCL. The signal line selection circuit 16 may also simultaneously connect a predetermined number of signal lines SGL (two or more) to one detection circuit 48. Furthermore, the gate line driving circuit 15 may scan a plurality of gate lines GCL by thinning them out. As an example, the dynamic range is approximately 10 s when the exposure time Pex is approximately 4.3 ms. 3 Also, high resolution can be achieved by setting the frame rate to approximately 4.4 fps (effectively 4.4 fps).

[0082] The detection device 1 can also detect fingerprints using capacitance. Specifically, it uses capacitance elements Ca. First, all capacitance elements Ca are charged with a predetermined charge. Then, when a finger Fg touches the detection area AA, a capacitance corresponding to the unevenness of the fingerprint is added to the capacitance element Ca of each cell. Therefore, with the finger Fg in contact, a fingerprint pattern can be generated by reading the capacitance indicated by the output from the capacitance element Ca of each cell using the detection signal amplifier 42 and the A / D converter 43, similar to the acquisition of the output from each partial detection area PAA described with reference to FIGS. 7 and 8. This method enables fingerprint detection using a capacitance method. It is desirable to configure the device so that the distance between the capacitance of the partial detection area PAA and the object to be detected, such as a fingerprint, is set to 100 μm to 300 μm.

[0083] Next, a description will be given of an example of the operation of the sensor unit 10, the first light source 61, and the second light source 62. Fig. 9 is an explanatory diagram for explaining the relationship between the driving of the sensor unit of the detection device and the lighting operation of the light source.

[0084] 9, in each of periods t(1) to t(4), the detection device 1 executes the processes of the reset period Prst, the effective exposure period Pex{(1)...(M)}, and the readout period Pdet described above. In the reset period Prst and the readout period Pdet, the gate line drive circuit 15 sequentially scans the gate lines GCL(1) to GCL(M).

[0085] During period t(1), the second light source 62 is turned on and the first light source 61 is turned off. As a result, in the detection device 1, a current flows from the photodiode PD to the detection circuit 48 via the signal line SGL based on the second light L62 emitted from the second light source 62. Furthermore, during period t(2), the first light source 61 is turned on and the second light source 62 is turned off. As a result, in the detection device 1, a current flows from the photodiode PD to the detection circuit 48 via the signal line SGL based on the first light L61 emitted from the first light source 61. Similarly, during period t(3), the second light source 62 is turned on and the first light source 61 is turned off, and during period t(4), the first light source 61 is turned on and the second light source 62 is turned off.

[0086] In this way, the first light source 61 and the second light source 62 are turned on in a time-division manner for each period t. As a result, a first detection signal detected by the photodiode PD based on the first light L61 and a second detection signal detected by the photodiode PD based on the second light L62 are output to the detection circuit 48 in a time-division manner. This makes it possible to prevent the first detection signal and the second detection signal from being superimposed and output to the detection circuit 48. This allows the detection device 1 to effectively detect various pieces of information related to a living body.

[0087] The method of driving the first light source 61 and the second light source 62 can be changed as appropriate. For example, in FIG. 9, the first light source 61 and the second light source 62 are alternately turned on for each period t, but this is not limited to this. The first light source 61 may be turned on continuously for multiple periods t, and then the second light source 62 may be turned on continuously for multiple periods t. Furthermore, the first light source 61 and the second light source 62 may be turned on simultaneously for each period t. Furthermore, while FIG. 9 shows an example of a constant exposure control method, the first light source 61 and the second light source 62 may also be driven alternately for each period t in a gate line scanning exposure control method, as in FIG. 9.

[0088] Fig. 10 is an explanatory diagram illustrating the relationship between the driving of the sensor unit, which is different from Fig. 9, and the lighting operation of the light source. In the example shown in Fig. 10, the first light source 61 and the second light source 62 are turned on during the effective exposure period Pex, and are turned off during the reset period Prst and the readout period Pdet. This allows the detection device 1 to reduce the power consumption required for detection.

[0089] 10, the first light source 61 and the second light source 62 may be continuously lit throughout the entire reset period Prst, the effective exposure period Pex, and the readout period Pdet. Alternatively, either the first light source 61 or the second light source 62 may be lit during the effective exposure period Pex, and may be alternately lit every period t.

[0090] 11 and 12 are diagrams schematically illustrating the relationship between the sensor unit, the first light source, and the second light source of the detection device according to the first embodiment. FIGS. 11 and 12 illustrate operation examples in which the relative positional relationship between the finger Fg and the sensor unit 10 is different. As shown in FIGS. 11 and 12, the sensor substrate 21 has a first curved surface Sa1 and a second curved surface Sa2 opposite to the first curved surface Sa1. The first curved surface Sa1 is convexly curved in a direction from the second curved surface Sa2 toward the first curved surface Sa1. The second curved surface Sa2 is concavely curved along the surface of the finger Fg. A plurality of photodiodes PD are provided on the first curved surface Sa1. The sensor substrate 21 may be a film-like resin material having light-transmitting properties, or may be a curved glass substrate.

[0091] The multiple first light sources 61-1, 61-2, and 61-3 are provided along the first curved surface Sa1 and emit first light L61 in different directions. The multiple second light sources 62-1, 62-2, and 62-3 are provided opposite the second curved surface Sa2 and emit second light L62 in different directions. The first light source 61-1 and the second light source 62-3 are disposed with the finger Fg between them and emit the first light L61 and the second light L62 in opposite directions. Similarly, the first light source 61-2 and the second light source 62-2 are disposed with the finger Fg between them and emit the first light L61 and the second light L62 in opposite directions. The first light source 61-3 and the second light source 62-1 are disposed with the finger Fg between them and emit the first light L61 and the second light L62 in opposite directions.

[0092] In the following description, when it is not necessary to distinguish between the first light sources 61-1, 61-2, and 61-3, they will be referred to as first light sources 61. Furthermore, when it is not necessary to distinguish between the second light sources 62-1, 62-2, and 62-3, they will be referred to as second light sources 62.

[0093] 11 and 12, the first light source substrate 51 and the second light source substrate 52 are omitted, but each has a curved shape that fits the surface of the finger Fg. Alternatively, one light source substrate may be formed in an annular shape so as to surround the finger Fg, and the first light source 61 and the second light source 62 may be provided on the inner peripheral surface of the light source substrate.

[0094] 13 is a schematic diagram showing an example of the positional relationship between the second light source 62, the sensor unit 10, and the blood vessels VB in the finger Fg. The second light L62 emitted from the second light source 62 (at least one of the second light sources 62-1, 62-2, and 62-3) passes through the finger Fg and is incident on the photodiode PD in each partial detection area PAA. At this time, the transmittance of the second light L62 through the finger Fg changes in accordance with the pulsation of the blood vessels VB in the finger Fg. Therefore, the pulse rate can be calculated based on the period of change (amplitude) of the detection signal Vdet during a period equal to or longer than the pulsation period of the blood vessels VB.

[0095] When calculating the pulse rate based on the period of change (amplitude) of the detection signal Vdet, by using a detection signal Vdet with a larger amplitude, it is possible to continue to obtain information for calculating the pulse rate more reliably.

[0096] FIG. 14 is a schematic diagram showing positions (positions P1, P2, P3, P4, P5, and P6) of a plurality of exemplary partial detection areas PAA within a photodiode PD, when the planar detection area AA is formed by a plurality of photodiodes PD arranged to face a finger Fg, as viewed from above. FIG. 15 is a graph showing an example of time-dependent changes in the detection signal Vdet acquired at the plurality of positions shown in FIG. 14. Line L1 in FIG. 15 shows an example of time-dependent changes in the detection signal Vdet from the partial detection area PAA at position P1 in FIG. 14. Line L2 in FIG. 15 shows an example of time-dependent changes in the detection signal Vdet from the partial detection area PAA at position P2 in FIG. 14. Line L3 in FIG. 15 shows an example of time-dependent changes in the detection signal Vdet from the partial detection area PAA at position P3 in FIG. 14. Line L4 in FIG. 15 shows an example of time-dependent changes in the detection signal Vdet from the partial detection area PAA at position P4 in FIG. 14. A line L5 in Fig. 15 shows an example of change over time in the detection signal Vdet from the partial detection area PAA at the position P5 in Fig. 14. A line L6 in Fig. 15 shows an example of change over time in the detection signal Vdet from the partial detection area PAA at the position P6 in Fig. 14.

[0097] For example, in FIG. 14, the detection signal Vdet from the partial detection area PAA of the photodiode PD facing the finger Fg, located at position P5 near the center of the tip of the finger Fg, exhibits a change over time as indicated by line L5 in FIG. 15. Specifically, line L5 shows the amplitude of the quantized detection signal Vdet, which alternately rises and falls, such as a first peak Max1, a first bottom Min1, a second peak Max2, a second bottom Min2, a third peak Max3, and so on. Note that the output values ​​of the first peak Max1, the second peak Max2, and the third peak Max3 are greater than the output values ​​of the first bottom Min1 and the second bottom Min2. Therefore, line L5 exhibits a first peak down Pd1 from the first peak Max1 to the first bottom Min1. Furthermore, line L5 exhibits a first peak up Pu1 from the first bottom Min1 to the second peak Max2. Also, on line L5, a second peak down Pd2 occurs from the second peak Max2 to the second bottom Min2. Also, on line L5, a second peak up Pu2 occurs from the second bottom Min2 to the third peak Max3. In this way, line L5 shows the change (amplitude) of the detection signal Vdet, which repeats peak ups and peak downs, including the range not marked with a symbol in FIG. 15. Here, a set of one consecutive peak up and peak down corresponds to one pulsation occurring in the blood vessel VB.

[0098] Like line L5, lines L1, L2, L3, L4, and L6 also show the change (amplitude) of the detection signal Vdet, which repeats peak-up and peak-down. In this way, the outputs of the detection signal Vdet from the partial detection areas PAA provided at different positions P1, P2, P3, P4, P5, and P6 within the detection area AA each show a change corresponding to the transmittance of the second light L62, which changes in accordance with the pulsation of the blood vessel VB.

[0099] 14 and 15, the degree of change (amplitude) of the detection signal Vdet varies depending on the position of the partial detection area PAA facing the finger Fg. For example, the amplitudes of lines L1 and L6 are clearly smaller than the amplitude of line L5. Therefore, if it is desired to more reliably and continuously acquire information indicating the change (amplitude) of the detection signal Vdet corresponding to the pulsation occurring in the blood vessel VB, the partial detection area PAA provided at position P5 is considered more desirable than the partial detection area PAA provided at positions P1 and P6.

[0100] 11 and 12, the sensor unit 10 may become misaligned with biological tissue such as the finger Fg during use. When such misalignment occurs, the degree of change (amplitude) of the detection signal Vdet may change at each position (e.g., positions P1, ..., P6) where the partial detection area PAA is provided, before and after a predetermined time (e.g., a predetermined period Pt in FIG. 16, which will be described later).

[0101] Therefore, the output processing unit 50 of the embodiment performs processing (focus processing) to identify a partial detection area PAA where the degree of change (amplitude) of the detection signal Vdet is greater. Specifically, the output processing unit 50 acquires the detection signal Vdet for each partial detection area PAA during a predetermined period. The output processing unit 50 identifies the partial detection area PAA that outputs the detection signal Vdet with the largest difference between the peak and bottom among the peak downs and peak ups that occur in the detection signals Vdet output from the plurality of partial detection areas PAA during the predetermined period. The output processing unit 50 identifies the partial detection area PAA that output the detection signal Vdet that caused the identified peak down or peak up.

[0102] The locations where the degree of change (amplitude) of the detection signal Vdet is acquired are not limited to positions P1, P2, P3, P4, P5, and P6. The output processing unit 50 may acquire the degree of change (amplitude) of the detection signal Vdet individually for all of the plurality of partial detection areas PAA provided in the sensor unit 10, or may sample some of the partial detection areas PAA and individually acquire the degree of change (amplitude) of the detection signal Vdet.

[0103] In the embodiment, the output processing unit 50 performs focusing processing by individually acquiring the degree of change (amplitude) of the detection signal Vdet for all of the plurality of partial detection areas PAA provided in the sensor unit 10, and outputs data based on the detection signal Vdet from the partial detection area PAA identified by the focusing processing as pulse wave data. The pulse wave data may be data including information indicating the number of amplitudes that occurred during a predetermined period, data including information indicating a pulse rate value calculated by the output processing unit 50 based on a predetermined arithmetic expression based on the relationship between a unit time (e.g., minute) of the pulse rate and the predetermined period, or data including information indicating the change in the detection signal Vdet itself, which can be depicted by a line L1 or the like.

[0104] 16 is a time chart illustrating the relationship between a predetermined period Pt and the output from the partial detection area PAA identified by the focus process. In this embodiment, among the detection signals Vdet from each partial detection area PAA acquired during the predetermined period Pt from the first timing Ta to the second timing Tb, the detection signal Vdet with the greatest degree of change during the predetermined period Pt is identified. Data Ia based on the identified detection signal Vdet is output as pulse wave data for the predetermined period Pt from the first timing Ta to the second timing Tb. Furthermore, among the detection signals Vdet from each partial detection area PAA acquired during the predetermined period Pt from the second timing Tb to the third timing Tc, the detection signal Vdet with the greatest degree of change during the predetermined period Pt is identified. Data Ib based on the identified detection signal Vdet is output as pulse wave data for the predetermined period Pt from the second timing Tb to the third timing Tc. Furthermore, of the detection signals Vdet acquired from each partial detection area PAA during a predetermined period Pt from the third timing Tc to the fourth timing Td, the detection signal Vdet that has changed the most during the predetermined period Pt is identified. Data Ic based on the identified detection signal Vdet is output as pulse wave data for the predetermined period Pt from the third timing Tc to the fourth timing Td. Similarly, pulse wave data is output for each predetermined period Pt from the fourth timing Td onwards.

[0105] The predetermined period Pt is a period including multiple outputs of the detection signal Vdet, during which an amplitude waveform resulting from a combination of consecutive peak-ups and peak-downs is derived at least once. The predetermined period Pt is set in advance. The predetermined period Pt is, for example, 4 seconds, but is not limited to this and can be changed as appropriate.

[0106] FIG. 17 is a flowchart showing an example of the flow of processing related to the output of pulse wave data in the first embodiment. The output processing unit 50 acquires the output (detection signal Vdet) of each optical sensor (e.g., photodiode PD) (step S1). The output processing unit 50 repeats the processing of step S1 until a predetermined period Pt has elapsed (step S2; No). After the predetermined period Pt has elapsed (step S2; Yes), the output processing unit 50 acquires the degree of change in the output (detection signal Vdet) of each optical sensor (photodiode PD) (step S3). The output processing unit 50 identifies the optical sensor with the largest degree of change among the degrees of change in the output (detection signal Vdet) acquired in the processing of step S3 (step S4). The output processing unit 50 adopts data based on the output (detection signal Vdet) of the optical sensor identified in the processing of step S4 as pulse wave data (step S5). If the operation of the detection device 1 has not ended (step S6; No), the processing of step S1 is performed again. If the operation of the detection device 1 has finished (step S6; Yes), the process ends.

[0107] Although the above description has been given of the acquisition of pulse wave data based on the detection signal Vdet with the greatest degree of change, the detection signal Vdet with the highest peak value (Max1, Max2, Max3, etc.) may be used instead of the detection signal Vdet with the greatest degree of change. In other words, pulse wave data may be acquired based on the detection signal Vdet with the highest peak value.

[0108] As described above, according to the first embodiment, the detection device 1 includes a plurality of optical sensors (e.g., photodiodes PD) arranged in the detection area AA, light sources (e.g., first light source 61, second light source 62) that emit light that is irradiated onto a detection object (e.g., a finger Fg) and detected by the optical sensors, and a processing unit (e.g., output processing unit 50) that performs processing based on the outputs from the plurality of optical sensors. The processing unit determines which of the plurality of optical sensors will have its output adopted based on the outputs of each of the plurality of optical sensors obtained periodically over a predetermined period (e.g., a predetermined period Pt). As a result, even if the positional relationship between the optical sensor and the detection object changes, the processing unit appropriately determines which optical sensor will have its output adopted over the predetermined period, thereby obtaining an output that corresponds to the change in position over the predetermined period. Therefore, the processing unit can respond to changes in the positional relationship between the optical sensor and the detection object.

[0109] Furthermore, the processing unit (e.g., output processing unit 50) uses the output of the optical sensor (e.g., photodiode PD) that has the largest output or change in output during a predetermined period (e.g., predetermined period Pt) as the most appropriate output for obtaining the sensor output Vo containing pulse wave data. This allows for increased accuracy of the pulse wave data even when the positional relationship between the optical sensor and the detected object changes. This allows for adaptability to changes in the positional relationship between the optical sensor and the detected object.

[0110] (Embodiment 2) Next, a description will be given of embodiment 2. In the description of embodiment 2, the same components as those in embodiment 1 will be denoted by the same reference numerals and the description thereof will be omitted.

[0111] In the first embodiment, the optical sensor (photodiode PD) with the greatest degree of change in output (detection signal Vdet) is identified, and data based on the output from that optical sensor is used as pulse wave data. In contrast, the pulse wave data in the second embodiment differs from the first embodiment in that it is data based on the output from the group area (group area PAG) that includes the optical sensor (photodiode PD) with the greatest degree of change in output (detection signal Vdet).

[0112] 18 and 19 are schematic diagrams illustrating the control of pulse wave data acquisition in units of group areas PAG. While FIGS. 18 and 19 are enlarged schematic diagrams of the vicinity of position P5 in FIG. 14, the present invention is not limited to this. In FIGS. 18 and 19, the detection area of ​​the sensor unit 10 is illustrated, for example, as a matrix of x×y=6×6 group areas PAG. Furthermore, to distinguish the positions of the x×y=6×6 group areas PAG, coordinates x1, x2, x3, x4, x5, and x6 are assigned in the first direction Dx, and coordinates y1, y2, y3, y4, y5, and y6 are assigned in the second direction Dy. For example, a group area PAG of (x1, y1) refers to the group area PAG corresponding to the position of the combination of coordinates x1 and y1. Also, in Figures 18 and 19, for example, multiple partial detection areas PAA arranged in a matrix are grouped into one group area PAG in units of a predetermined number (for example, x x y = 6 x 6 [pieces]).

[0113] Fig. 18 shows an example in which the blood vessel VB is within the range of coordinates y2, y3, y4. Here, among the partial detection areas PAA shown in Fig. 18, the position of the partial detection area PAA where the degree of change in the output (detection signal Vdet) is the largest is assumed to be position Pmax1 in the group area PAG at (x5, y3).

[0114] On the other hand, Fig. 19 shows an example in which blood vessel VB is within the range of coordinates y3, y4, y5. The difference between Fig. 18 and Fig. 19, i.e., the difference in the position of blood vessel VB, occurs, for example, due to a positional shift of sensor unit 10 with respect to finger Fg (see Figs. 11 and 12). When a positional shift occurs from the state in Fig. 18 to the state in Fig. 19, the position of partial detection area PAA where the degree of change in output (detection signal Vdet) is greatest shifts from position Pmax1 to position Pmax2 within group area PAG at (x5, y4).

[0115] In the first embodiment, the output (detection signal Vdet) from the partial detection area PAA at position Pmax1 is used as the output during the predetermined period Pt before the positional shift (see FIG. 18), and the output (detection signal Vdet) from the partial detection area PAA at position Pmax2 is used as the output during the predetermined period Pt after the positional shift (see FIG. 19). In contrast, in the second embodiment, the output (detection signal Vdet) from the plurality of partial detection areas PAA provided in the group area PAG at (x5, y3) including the partial detection area PAA at position Pmax1 is used as the output during the predetermined period Pt before the positional shift (see FIG. 18), and the output (detection signal Vdet) from the plurality of partial detection areas PAA provided in the group area PAG at (x5, y4) including the partial detection area PAA at position Pmax2 is used as the output during the predetermined period Pt after the positional shift (see FIG. 19). In this way, in the second embodiment, the output from the group area PAG including the partial detection area PAA with the greatest degree of change in output (detection signal Vdet) is used.

[0116] 20 is an explanatory diagram showing an example of averaging processing of outputs from multiple partial detection areas PAA. In the second embodiment, when using the outputs (detection signals Vdet) from multiple partial detection areas PAAs provided in a group area PAG including the partial detection area PAA with the largest degree of change in output (detection signal Vdet), averaging processing is performed to average the outputs from the multiple partial detection areas PAAs. In the averaging processing, the output (detection signal Vdet) of each partial detection area PAAs is converted into a digital value using analog-to-digital conversion processing, the output values ​​of the multiple partial detection areas PAAs are added together, and the sum is divided by the number of partial detection areas PAAs whose output values ​​are added together.

[0117] In FIG. 20, the "Output Value" column of the table shows the output value obtained by digitizing the output (detection signal Vdet) from each of the multiple partial detection areas PAA. In this table, in order to distinguish the position of each of the multiple partial detection areas PAA, coordinates xa, xb, and xc are assigned to the first direction Dx, and coordinates ya, yb, yc, yd, ye, yf, and yg are assigned to the second direction Dy. In other words, the value of one cell in the table indicates the output value of one partial detection area PAA. Note that the values ​​of each cell are merely exemplary, and do not indicate that the output values ​​from each of the multiple partial detection areas PAA are limited to these values.

[0118] Note that the values ​​in each cell of the "Output Value" column are the same for "No Averaging," "Averaging Example 1 (3 values)," and "Averaging Example 2 (5 values)" in Fig. 20. The output values ​​shown in each cell of these tables are output values ​​at a certain timing, but the graph of the output values ​​shown in the "Graph" column is a graph showing how the output values ​​changed multiple times during a period including that timing (for example, a predetermined period Pt) during that period.

[0119] In the graph of "No Averaging" in FIG. 20, line La shows the change over time in the output value when the output value of each partial detection area PAA is used as is. On the other hand, line Lb in the graph of "Averaging Example 1 (3)" uses the average value of the output values ​​of three partial detection areas PAA arranged consecutively in one direction (e.g., the second direction Dy). As shown in the graph of "Averaging Example 1 (3)," averaging reduces the influence of noise on the output value, making the periodicity of the peaks and valleys shown in the change over time of the output value more apparent. Furthermore, line Lc in the graph of "Averaging Example 2 (5)" uses the average value of the output values ​​of five partial detection areas PAA arranged consecutively in the same direction. By increasing the number of partial detection areas PAA whose output values ​​are to be averaged, the influence of various noises such as element variation and power supply noise on the output value is further reduced, making the periodicity of the peaks and valleys shown in the change over time of the output value more apparent.

[0120] The number (predetermined number) of partial detection areas PAA whose output values ​​are averaged in FIG. 20 is merely an example for explaining the averaging process and is not intended to limit the embodiments. In the second embodiment, for example, the output values ​​of multiple partial detection areas PAA provided in one group area PAG including the partial detection area PAA with the largest degree of change in output (detection signal Vdet) are averaged and used as the output value from that group area PAG. In the second embodiment, the output values ​​of multiple partial detection areas PAA provided in that one group area PAG and in group areas PAGs near that one group area PAG may also be averaged and used as the output value from that group area PAG. Here, the group areas PAGs near that one group area PAG may be, for example, group areas PAGs adjacent to that one group area PAG along the first direction Dx or the second direction Dy, or multiple group areas PAGs aligned consecutively with that one group area PAG along one of the first direction Dx or the second direction Dy.

[0121] Fig. 21 is a flowchart showing an example of the processing flow relating to the output of pulse wave data in embodiment 2. The processing flow of embodiment 2 shown in Fig. 21 is similar to the processing of embodiment 1, except that the processing of step S5 in the processing flow of embodiment 1 shown in Fig. 17 is replaced with the processing of step S15.

[0122] In the processing of step S15, the output processing unit 50 performs an averaging process to average the output of the group area (group area PAG) including the optical sensor (photodiode PD of partial detection area PAA) identified in the processing of step S4, and acquires pulse wave data based on the amplitude indicated by the change over time in the output value obtained by the averaging process.

[0123] Except for the points specifically mentioned above, the second embodiment is the same as the first embodiment.

[0124] According to the second embodiment, the detection area AA includes multiple group areas (e.g., group area PAG). Each of the multiple group areas includes multiple optical sensors (e.g., photodiodes PD). The output processing unit 50 uses the output of the group area including the optical sensor with the largest output generated during a predetermined period (e.g., a predetermined period Pt) or the largest change in output generated during the predetermined period. This allows the most appropriate output for obtaining the sensor output Vo containing pulse wave data, thereby further improving the accuracy of the pulse wave data even if the positional relationship between the optical sensor and the detected object changes. This allows for adapting to changes in the positional relationship between the optical sensor and the detected object.

[0125] Furthermore, multiple optical sensors (e.g., photodiodes PD) are arranged in a matrix in the detection area AA. The output processing unit 50 performs an averaging process to average the outputs of a predetermined number of optical sensors, which are two or more adjacent optical sensors but not all of the optical sensors, and determines the optical sensor whose output will be used based on the output averaged in the averaging process. This further mitigates the effects of various noises in the output value and further reveals the periodicity of peaks and valleys indicated by changes in the output value over time. This further improves the accuracy of the sensor output Vo, such as pulse wave data. Note that the specific content of the averaging process is not limited to this and can be modified as appropriate. For example, at least one gate line GCL and multiple signal lines SGL, or multiple gate lines and at least one signal line SGL, may be bundled together to simultaneously read outputs from multiple adjacent partial detection areas PAA.

[0126] (Embodiment 3) Next, a description will be given of embodiment 3. In the description of embodiment 3, the same components as those in embodiments 1 and 2 will be denoted by the same reference numerals and the description thereof will be omitted.

[0127] In the third embodiment, as described with reference to FIGS. 11 and 12, fingerprint detection is performed by generating a fingerprint pattern of a finger Fg. This fingerprint detection is performed every predetermined period Pt. The output processing unit 50 calculates the amount of misalignment of the photodiode PD with respect to the finger Fg based on the difference in the positional relationship between the position of the first detected fingerprint pattern (initial fingerprint pattern) and the positions of fingerprint patterns detected thereafter. Based on the calculated amount of misalignment, the output processing unit 50 corrects the positional misalignment of the optical sensor (partial detection area PAA) that is treated as the output to be adopted.

[0128] As a specific method for fingerprint detection, either a method of generating a fingerprint pattern using the sensor unit 10 as an optical sensor based on the detection of light from at least one of the first light source 61 and the second light source 62, or a method of recognizing the unevenness of the fingerprint using a capacitance sensor that utilizes the capacitance of the capacitance element Ca can be used.

[0129] In the third embodiment, for example, the first light L61 has a wavelength of 360 nm or more and less than 800 nm, for example, approximately 500 nm. The second light L62 has a wavelength of 800 nm or more and 930 nm or less, for example, approximately 850 nm. In other words, the wavelength of the second light L62 is longer than the wavelength of the first light L61. In this case, the first light L61 is visible light. The second light L62 is infrared light.

[0130] When detecting a fingerprint using one of the two wavelengths of the first light L61 and the second light L62 and detecting blood vessels and a pulse wave pattern using the other, the first light L61 is used to detect the fingerprint, and the second light L62 is used to detect the blood vessels and the pulse wave pattern. Note that it is also possible to detect both the fingerprint and the blood vessels using the light of one wavelength, the second light L62.

[0131] 22 is a flowchart showing an example of the process flow for outputting pulse wave data in the third embodiment and the fourth embodiment described later. In the third embodiment and the fourth embodiment described later, an initial process is first performed (step S21). Then, a positional deviation response process is performed (step S22). The process of step S22 is repeated until the operation of the detection device 1 is completed (step S23; No). When the operation of the detection device 1 is completed (step S23; Yes), the process is completed.

[0132] Fig. 23 is a flowchart showing an example of the flow of the initial processing in Fig. 22. The initial processing is similar to the processing described with reference to the flowchart shown in Fig. 21, except that the processing of step S6 is omitted from the flowchart shown in Fig. 21. The return after the processing of step S15 in Fig. 23 indicates that the processing of step S21 (initial processing) shown in Fig. 22 has ended and that the processing proceeds to the next processing, that is, the processing of step S22 (position deviation response processing).

[0133] 24 is a flowchart showing an example of the flow of the misalignment handling process of FIG. 22 in the third embodiment. First, a fingerprint pattern is acquired (step S31). The fingerprint pattern is acquired in step S31 based on the output of each optical sensor (photodiode PD) during the initial processing, for example. During the initial processing, it is arbitrary to determine the timing at which the fingerprint pattern is generated based on the output, but this is determined in advance (for example, the first time).

[0134] The output processing unit 50 acquires the output (detection signal Vdet) of each optical sensor (photodiode PD) (step S32). The output processing unit 50 repeats the process of step S32 until a predetermined period Pt has elapsed (step S33; No). Once the predetermined period Pt has elapsed (step S33; Yes), a fingerprint pattern is acquired (step S34). The fingerprint pattern acquisition in step S34 is performed, for example, based on the latest output of each optical sensor (photodiode PD), but is not limited to this and may be any output from each optical sensor (photodiode PD) within a period not going back more than the predetermined period Pt.

[0135] The output processing unit 50 calculates the amount of deviation of the latest fingerprint pattern from the initial fingerprint pattern (step S35). Specifically, in the process of step S35, the output processing unit 50 compares the positional relationship between the fingerprint pattern obtained in the process of step S31 and the plurality of partial detection areas PAA with the positional relationship between the fingerprint pattern obtained in the process of step S34 and the plurality of partial detection areas PAA. Based on a matching process such as feature point detection contained in the fingerprint pattern, the output processing unit 50 determines whether or not the positions of the partial detection areas PAA in which concavities and convexities determined to be the same fingerprint pattern are detected are misaligned, and if so, performs a process of quantifying the amount of deviation as the amount of deviation in the first direction Dx and the second direction Dy of the partial detection areas PAA.

[0136] The output processing unit 50 identifies the optical sensor (photodiode PD) located at a position shifted by the amount of shift calculated in step S35 from the position of the optical sensor identified in step S4 of the initial processing as the optical sensor (photodiode PD) with the largest degree of output change (step S36). The output processing unit 50 acquires pulse wave data from the amplitude of the output value obtained by averaging the outputs of the group area (group area PAG) including the optical sensor identified in step S36 (step S37). The process of step S37 is similar to the process of step S15, except that the criterion for determining the group area changes from the optical sensor identified in step S4 to the optical sensor identified in step S36. The return after the process of step S37 in FIG. 24 and FIG. 26, which will be described later, indicates that the process of step S22 shown in FIG. 22 (position shift response process) has ended and the process proceeds to the next process, step S23.

[0137] 22, 23, and 24, fingerprint detection is performed during pulse wave measurement, that is, for each predetermined period Pt during which a change in output (amplitude) occurs to acquire a pulse wave, but this is not limited to this. Fingerprint detection may be performed during the entire operation period described below, and not during other periods, with fingerprint detection performed once for each set of pulse wave measurements (thinned fingerprint measurement). As described above, embodiment 3 is the same as embodiment 2, except for the points noted above.

[0138] According to the third embodiment, the detection area AA faces the finger Fg (see FIGS. 11 and 12). The output processing unit 50 determines which of the multiple optical sensors (e.g., photodiodes PD) will have its output adopted based on a fingerprint pattern generated based on the outputs of the multiple partial detection areas PAA. Even if the positional relationship between the optical sensor and the finger Fg changes, the output to be adopted is determined based on the positional deviation of the detected fingerprint pattern, so that an output corresponding to the change in position can be obtained periodically at a predetermined interval. Therefore, it is possible to respond to changes in the positional relationship between the optical sensor and the finger Fg.

[0139] (Modification of the third embodiment) Next, a modified example will be described in which the processes from step S35 to step S37 in embodiment 3 are replaced with other processes. Specifically, in this modified example, the process branches depending on whether or not there is a deviation between the initial fingerprint pattern (see step S31) and the latest fingerprint pattern (see step S34).

[0140] 25 is a flowchart showing an example of the flow of the positional deviation handling process of FIG. 22 in a modified example of embodiment 3. The processes from step S31 to step S34 are the same as the processes described with reference to FIG.

[0141] The output processing unit 50 determines whether or not there is a deviation of the latest fingerprint pattern from the initial fingerprint pattern (step S45). Specifically, in the process of step S45, the output processing unit 50 compares the positional relationship between the fingerprint pattern obtained in the process of step S31 and the plurality of partial detection areas PAA with the positional relationship between the fingerprint pattern obtained in the process of step S34 and the plurality of partial detection areas PAA. Based on a matching process such as feature point detection included in the fingerprint pattern, the output processing unit 50 determines whether or not there is a deviation in the position of the partial detection area PAA in which concavities and convexities determined to be the same fingerprint pattern are detected.

[0142] If it is determined in the processing of step S45 that there is a deviation (step S46; Yes), the output processing unit 50 sequentially performs the processing of steps S3, S4, and S15. On the other hand, if it is determined in the processing of step S45 that there is no deviation (step S46; No), the output processing unit 50 acquires pulse wave data from the amplitude of the output value obtained by averaging the outputs of the group area (group area PAG) including the optical sensor (photodiode PD) that was determined to have the largest degree of output change in the processing of step S4 of the initial processing (step S47). The returns after the processing of step S15 and step S47 in FIG. 25 and FIG. 27 described later indicate that the processing of step S22 shown in FIG. 22 (position deviation response processing) has ended and the processing proceeds to the next processing, step S23.

[0143] As described above, except for the points specifically mentioned, the modified example of the third embodiment is the same as the third embodiment.

[0144] (Embodiment 4) Next, a description will be given of embodiment 4. In the description of embodiment 4, the same components as those of embodiments 1, 2 and 3 will be denoted by the same reference numerals and the description thereof will be omitted.

[0145] In the third embodiment, a fingerprint pattern is used in the misalignment handling process, but in the fourth embodiment, a blood vessel pattern generated based on the shape of the blood vessel VB facing the detection area AA is used, which is different from the third embodiment. Specifically, in the fourth embodiment, the initial processing in the processing flow described with reference to Fig. 22 is the same as in the third embodiment, but part of the misalignment handling process is different from the third embodiment.

[0146] 26 is a flowchart showing an example of the flow of the positional deviation response process shown in FIG. 22 in the fourth embodiment. In the fourth embodiment, a blood vessel pattern is acquired as a process in step S51, which replaces the process in step S31 in the third embodiment. The blood vessel pattern is acquired in step S51 based on the output of each optical sensor (photodiode PD) during the initial process, for example. During the initial process, it is arbitrary to determine the timing at which the blood vessel pattern is generated based on the output, but this is determined in advance (for example, the first time).

[0147] In addition, in the fourth embodiment, a blood vessel pattern is acquired as a process in step S54 instead of the process in step S34 in the third embodiment. The acquisition of the blood vessel pattern in step S54 is performed, for example, based on the latest output of each optical sensor (photodiode PD), but is not limited to this, and may be based on the output of each optical sensor (photodiode PD) within a period not going back more than the predetermined period Pt.

[0148] Furthermore, in the fourth embodiment, the process of step S55 is performed instead of the process of step S35 in the third embodiment. In the process of step S55, the output processing unit 50 calculates the amount of deviation of the latest vascular pattern from the initial vascular pattern. Specifically, the output processing unit 50 compares the positional relationship between the vascular pattern obtained in the process of step S51 and the plurality of partial detection areas PAA with the positional relationship between the vascular pattern obtained in the process of step S54 and the plurality of partial detection areas PAA. Based on a matching process such as detecting feature points contained in the vascular patterns, the output processing unit 50 determines whether or not the positions of the partial detection areas PAA in which the same vascular pattern is detected are misaligned, and if so, quantifies the amount of deviation as the amount of deviation in the first direction Dx and the second direction Dy of the partial detection areas PAA.

[0149] Except for the points noted above, embodiment 4 is the same as embodiment 3. Note that, although embodiment 4 employs a blood vessel pattern corresponding to blood vessel VB, the blood vessel VB may be an artery, a vein, or any other type.

[0150] According to the fourth embodiment, the detection area AA faces biological tissue (for example, a finger Fg or a wrist Wr, described later) that includes blood vessels (for example, blood vessels VB) therein. The output processing unit 50 determines which of the multiple optical sensors (for example, photodiodes PD) will have its output adopted based on a blood vessel pattern (for example, the pattern of blood vessels VB) generated based on the outputs of the multiple optical sensors. As a result, even if the positional relationship between the optical sensor and the biological tissue changes, the output to be adopted is determined based on the positional deviation of the detected blood vessel pattern, and therefore, an output corresponding to the change in position can be obtained at a predetermined period. Therefore, it is possible to respond to changes in the positional relationship between the optical sensor and the biological tissue.

[0151] (Modification of the fourth embodiment) Next, a modified example will be described in which the processes of steps S55, S36, and S37 in the fourth embodiment are replaced with other processes. Specifically, just as the fingerprint pattern in the third embodiment is replaced with the blood vessel pattern in the fourth embodiment, the fingerprint pattern in the modified example of the third embodiment is replaced with the blood vessel pattern in the modified example of the fourth embodiment. That is, in the modified example of the fourth embodiment, the process branches depending on whether or not there is a deviation between the initial blood vessel pattern (see step S51) and the latest blood vessel pattern (see step S54).

[0152] Fig. 27 is a flowchart showing an example of the flow of the positional deviation handling process of Fig. 22 in the modified example of embodiment 4. The processes from step S51 to step S54 in the modified example of embodiment 4 are the same as those in embodiment 4 (see Fig. 26).

[0153] The output processing unit 50 determines whether or not the latest vascular pattern is misaligned with the initial vascular pattern (step S65). Specifically, in the process of step S65, the output processing unit 50 compares the positional relationship between the vascular pattern obtained in the process of step S51 and the plurality of partial detection areas PAA with the positional relationship between the vascular pattern obtained in the process of step S54 and the plurality of partial detection areas PAA. Based on a matching process such as detection of feature points included in the vascular patterns, the output processing unit 50 determines whether or not the positions of partial detection areas PAA in which the same vascular pattern is detected are misaligned.

[0154] If it is determined in the process of step S65 that there is a discrepancy (step S46; Yes), the output processing unit 50 sequentially performs the process of step S3, the process of step S4, and the process of step S15. On the other hand, if it is determined in the process of step S65 that there is no discrepancy (step S46; No), the output processing unit 50 performs the process of step S47.

[0155] As described above, except for the points specifically mentioned, the modified example of the fourth embodiment is the same as the fourth embodiment.

[0156] The above description has been about a method of repeatedly acquiring outputs from all of the multiple optical sensors (photodiodes PD) during a predetermined period Pt, but the operation control of the multiple optical sensors is not limited to this. The detection control unit 11 may generate a full operation period during which all of the multiple optical sensors (photodiodes PD) are operated at a predetermined cycle, and during periods other than the full operation period, operate some of the optical sensors, including the optical sensor with the largest output generated during the full operation period or the largest degree of change in output generated during the full operation period. In this case, as shown by the dashed line in FIG. 2 , the output processing unit 50 feeds back to the detection control unit 11 information indicating the position of the optical sensor with the largest output generated during the full operation period or the largest degree of change in output generated during the full operation period, or the group area PAG including that optical sensor. Based on the information fed back from the output processing unit 50, the detection control unit 11 identifies and operates some of the optical sensors, including the optical sensor with the largest output generated during the full operation period or the largest degree of change in output generated during the full operation period.

[0157] For example, a total operation period Ba is set during a predetermined period Pt from the first timing Ta to the second timing Tb in FIG. 16 , during which all of the partial detection areas PAA are activated. The detection signal Vdet with the greatest degree of change during the total operation period Ba is identified, and the partial detection area PAA provided in the group area PAG including the partial detection area PAA that output the identified detection signal Vdet, or the partial detection area PAA provided in an area that includes the group area PAG but does not include all of the partial detection areas PAA, is determined as the partial detection area PAA that operates during the period Aa other than the total operation period. Then, the detection signal Vdet with the greatest degree of change during the total operation period Ba and the period Aa is identified, and data based on the output from the group area PAG including the partial detection area PAA with the greatest degree of change in the identified detection signal Vdet is output as pulse wave data. The pulse wave data based on the output from the group area PAG including the partial detection area PAA with the greatest degree of change in the detection signal Vdet is pulse wave data obtained, for example, through an averaging process. The relationship between the total operation period Bb and period Ab set during the predetermined period Pt from the second timing Tb to the third timing Tc is similar to the operation control during the total operation period Ba and period Aa. The relationship between the total operation period Bc and period Ac set during the predetermined period Pt from the third timing Tc to the fourth timing Td is similar to the operation control during the total operation period Ba and period Aa. The operation control during the total operation period and periods other than the total operation period set during the subsequent predetermined period Pt is similar to the operation control during the total operation period Ba and period Aa.

[0158] Note that a region that includes a group region PAG including a partial detection region PAA that outputs a detection signal Vdet with the greatest degree of change during the entire operating period (for example, the entire operating periods Ba, Bb, Bc), but does not include all of the multiple partial detection regions PAA, is, for example, a region that includes multiple group regions PAG that have the same position in the first direction Dx or the second direction Dy as the group region PAG, but the region is not limited to this and can be changed as appropriate.

[0159] In this way, the detection control unit 11, which controls the operation of multiple optical sensors (e.g., photodiodes PD), generates full operation periods (e.g., full operation periods Ba, Bb, and Bc) in which all of the multiple optical sensors operate at a predetermined cycle (e.g., predetermined period Pt). Furthermore, during periods other than the full operation periods (e.g., periods Aa, Ab, and Ac), some optical sensors, including the optical sensor with the largest output or the largest degree of change in output during the full operation period, are operated. This allows fewer optical sensors to operate during periods other than the full operation periods. Therefore, it becomes easier to increase the refresh rate of the optical sensors operated during periods other than the full operation periods.

[0160] Furthermore, the detection signal Vdet to be averaged is not limited to the detection signal Vdet from the partial detection area PAA provided in one group area PAG. For example, the detection signal Vdet from the partial detection area PAA that outputs the detection signal Vdet with the greatest degree of change may be averaged with the detection signal Vdet from a partial detection area PAA whose positional relationship with the partial detection area PAA satisfies a predetermined condition. The predetermined condition may be, for example, that the position of the partial detection area PAA that outputs the detection signal Vdet with the greatest degree of change is the same as the position in at least one of the first direction Dx and the second direction Dy, that the number of other partial detection areas PAA intervening between the partial detection area PAA and the partial detection area PAA is within a predetermined number, or that a combination of these conditions is satisfied. It is desirable that the predetermined number be a value sufficiently small relative to the number of partial detection areas PAA arranged in the first direction Dx and the second direction Dy.

[0161] For example, for a group area PAG including a partial detection area PAA that has output a detection signal Vdet with the greatest degree of change during the entire operation period (for example, the entire operation periods Ba, Bb, and Bc), at least one of the gate lines GCL and the signal lines SGL of the group area PAG may be driven collectively during a period other than the entire operation period (for example, periods Aa, Ab, and Ac), and the detection signals Vdet from the multiple partial detection areas PAA provided in the group area PAG may be integrated.

[0162] Furthermore, the size and characteristics of the partial detection area PAA do not have to be uniform. For example, multiple types of photodiodes PD with different sensitivities may be arranged alternately to widen the dynamic range of the entire partial detection area PAA.

[0163] Furthermore, the specific form of the detection device 1 is not limited to the form described with reference to Figs. 11 to 13. Fig. 28 is a schematic diagram showing an example of the main configuration of a detection device 1A in a form that can be worn on the wrist Wr. Fig. 29 is a schematic diagram showing an example of detection of a blood vessel VB by the detection device 1A shown in Fig. 28. As shown in Fig. 28, the sensor substrate 21 of the detection device 1A is flexible enough to be deformed into a ring shape that surrounds the wrist Wr. The photodiode PD, the first light source 61, and the second light source 62 are arranged in an arc shape along the ring-shaped sensor substrate 21.

[0164] Furthermore, the sensor unit 10 does not need to be in direct contact with the biological tissue. Fig. 30 shows a configuration example in which a lens Op is provided between a finger Fg and the sensor unit 10. As shown in Fig. 30, the lens Op may be provided at a position facing the light source 60 across the biological tissue (e.g., finger Fg), and at a position interposed between the biological tissue and the sensor unit 10. The light source 60 includes at least one of a first light source 61 and a second light source 62. The lens Op is, for example, an optical lens that focuses light directed from the light source 60 toward the sensor unit 10.

[0165] Furthermore, the detection device 1 or the detection device 1A may further be provided with a configuration capable of detecting a fingerprint or the like by a capacitance method as a sensor different from the photodiode PD.

[0166] FIG. 31 is a schematic diagram showing an example of the main configuration of a mutual capacitance sensor 130. The sensor 130 includes a first substrate 102 and a second substrate 103 arranged opposite each other. The first substrate 102 and the second substrate 103 are aligned along a plane (XY plane) perpendicular to the opposing direction (Z direction). The XY plane does not need to be a fixed, immovable plane. Displacement is allowed in accordance with the flexibility of the sensor substrate 21, similar to curvature of the first direction Dx-second direction Dy plane. However, for ease of understanding, in the following description, the two directions along the plane (XY plane) perpendicular to the Z direction in FIG. 31 are referred to as the X direction and the Y direction. The X direction and the Y direction are perpendicular to each other.

[0167] The first substrate 102 is provided with a plurality of first electrodes TX whose longitudinal direction is along the X direction and aligned along the Y direction. The second substrate 103 is provided with a plurality of second electrodes RX whose longitudinal direction is along the Y direction and aligned along the X direction. The plurality of first electrodes TX and the plurality of second electrodes RX face each other in the Z direction in a non-contact state. The sensor 130 is provided on the second substrate 103 side so as to be in proximity to or in contact with an external object such as a finger Fg.

[0168] When scanning (Scan) is performed, in which drive pulses are sequentially applied to the multiple first electrodes TX, capacitance is generated between the second electrode RX and the first electrode TX to which the drive pulses are applied. When a finger Fg or the like approaches or touches the second electrode RX, a change occurs in this capacitance. By obtaining the presence or absence of a change in this capacitance and the degree of the change as a detection signal Vdet1 from the second electrode RX, it is possible to detect a fingerprint or the like.

[0169] The position of the sensor 130 is previously associated with the position of the sensor unit 10. The sensor 130 is disposed in the detection device 1 or the like so as to face the finger Fg across the sensor unit 10, but is not limited to this. For example, the first electrode TX and the second electrode RX may be transparent electrodes made of ITO (Indium Tin Oxide) or the like, and may be disposed on the finger Fg side of the sensor unit 10. Furthermore, a self-capacitance type sensor may be configured by individually driving the plurality of first electrodes TX and the plurality of second electrodes RX.

[0170] 32 is a schematic diagram showing an example of the main configuration of a self-capacitance sensor 210. The sensor 210 includes a plurality of electrodes 220. The plurality of electrodes 220 are arranged, for example, in a matrix. The self-capacitance held by each electrode 220 changes when a finger Fg or the like approaches or touches the electrode. A control unit 240 connected to the plurality of electrodes 220 via wiring 230 is a circuit that detects whether or not the self-capacitance changes and the degree of the change.

[0171] The position of the sensor 210 is previously associated with the position of the sensor unit 10. The sensor 210 is disposed in the detection device 1 or the like so as to face the finger Fg across the sensor unit 10, but is not limited to this. For example, the electrode 220 may be a transparent electrode made of ITO (Indium Tin Oxide) or the like, and may be disposed on the finger Fg side of the sensor unit 10.

[0172] The detection device 1 can be mounted on various products that are expected to come into contact with or be close to biological tissue. Mounting examples of the detection device 1 will be described with reference to Figs.

[0173] FIG. 33 is a diagram showing an example of the arrangement of the sensor unit 10 of the detection device 1 mounted on a bandana Ke. FIG. 34 is a diagram showing an example of the arrangement of the sensor unit 10 of the detection device 1 mounted on clothing TS. FIG. 35 is a diagram showing an example of the arrangement of the sensor unit 10 of the detection device 1 mounted on an adhesive sheet PS. For example, the detection device 1 may be incorporated into products that are intended to come into contact with biological tissue, such as the bandana Ke in FIG. 33, the clothing TS in FIG. 34, and the adhesive sheet PS in FIG. 35. In this case, it is desirable that at least the sensor unit 10 be provided in a location that is expected to come into contact with biological tissue when the product is in use. Although not shown, it is desirable that light sources such as the first light source 61 and the second light source 62 be positioned taking into consideration the positional relationship between the sensor unit 10 and biological tissue. Note that the product is not limited to the bandana Ke, clothing TS, or adhesive sheet PS, and the detection device 1 can be incorporated into any product that is expected to come into contact with biological tissue when in use. The adhesive sheet PS is a sheet-like product with added adhesiveness, such as an external analgesic and anti-inflammatory sheet.

[0174] In each embodiment, the gate line driving circuit 15 performs time-division selective driving in which the gate driving signal Vgcl is sequentially supplied to the plurality of gate lines GCL, but this is not limiting. The sensor unit 10 may perform detection using code division selective driving (hereinafter referred to as CDM (Code Division Multiplexing) driving). CDM driving and driving circuits are described in, for example, Japanese Patent Application No. 2018-005178. Therefore, the description of Japanese Patent Application No. 2018-005178 is included in each embodiment and modified example (embodiment, etc.), and a description thereof is omitted.

[0175] Furthermore, it is desirable that the gate line GCL be aligned roughly in the direction of blood flow. Specifically, it is desirable that the gate line GCL in the sensor unit 10, which forms an arc along the annular sensor substrate 21 wrapped around the finger Fg or wrist Wr, be aligned along the central axis of the annulus.

[0176] Although preferred embodiments of the present invention have been described above, the present invention is not limited to such embodiments. The contents disclosed in the embodiments are merely examples, and various modifications are possible without departing from the spirit of the present invention. Appropriate modifications made without departing from the spirit of the present invention also naturally fall within the technical scope of the present invention. [Explanation of symbols]

[0177] 1,1A detection device 10 Sensor section 11 Detection control section 21 Sensor substrate 22 TFT layers 23 Insulating layer 31 Active users 34 Anode electrode 35 cathode electrode 48 Detection circuit 50 Output processing section 61 1st light source 62 Second light source AA detection area GCL Gate line PAA partial detection area PD photodiode SGL signal line

Claims

1. a plurality of optical sensors arranged in a plane; A change in output of each of the plurality of optical sensors is acquired over a predetermined period of time, and a first optical sensor having the largest change in output over the predetermined period of time is identified; The pulse wave data is not an average of all outputs of the plurality of optical sensors, but an average of outputs of two or more optical sensors including the output of the specified first optical sensor and the output of at least one optical sensor adjacent to the first optical sensor. Detection device.

2. The pulse wave data is generated from outputs of a predetermined number of optical sensors among the plurality of optical sensors. The detection device according to claim 1 .

3. a plurality of optical sensors arranged in a plane; the plurality of optical sensors are divided into a plurality of group regions; a first group area including a first optical sensor having the largest output change identified in a first sub-period of the predetermined period; and data based on the output of the optical sensor having the largest output change in a second sub-period following the first sub-period being used as pulse wave data. Detection device.

4. The predetermined period is set multiple times consecutively. The detection device according to claim 3 .

5. the plurality of optical sensors and the plurality of group regions are arranged in a matrix. The detection device according to claim 3 .

6. the data based on the output of the optical sensor with the largest output change in the second sub-period is output data of the optical sensor with the largest output change. The detection device according to claim 3 .

7. the data based on the output of the optical sensor having the largest output change during the second sub-period is data obtained by averaging output data of the optical sensor having the largest output change and a plurality of optical sensors adjacent to the optical sensor having the largest output change. The detection device according to claim 3 .

8. the light sensor is an organic photodiode; The detection device according to claim 3 .

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