Semiconductor device and electronic device

Abstract

Provided is a semiconductor device that has a light detection function and includes a high-definition display unit. The semiconductor device is configured to include a plurality of pixels, each pixel including first and second light reception devices, first through fifth transistors, a capacitor, and first wiring. One electrode of the first light reception device is electrically connected with the first wiring, and another electrode thereof is electrically connected with one of a source and a drain of the first transistor. One electrode of the second light reception device is electrically connected with the first wiring, and another electrode thereof is electrically connected with one of a source and a drain of the second transistor. The other of the source and the drain of the second transistor is electrically connected with the other of the source and the drain of the first transistor. The other of the source and the drain of the first transistor is electrically connected with one electrode of the capacitor, one of a source and a drain of the third transistor, and a gate of the fourth transistor.

Description

[Technical Field]

[0001] 1. Field of the Invention One embodiment of the present invention relates to a semiconductor device, a display device, a display module, and an electronic device. 2. Description of the Related Art One embodiment of the present invention relates to a manufacturing method of a display device.

[0002] One embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device (for example, a touch sensor), an input / output device (for example, a touch panel), a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] In recent years, information terminal devices such as mobile phones such as smartphones, tablet information terminals, and notebook PCs (personal computers) have become widespread. Such information terminal devices often contain personal information, and various authentication technologies have been developed to prevent unauthorized use. There is a demand for information terminal devices with various functions, such as an image display function, a touch sensor function, and a function for capturing fingerprint images for authentication.

[0004] For example, Patent Document 1 discloses an electronic device that includes a fingerprint sensor in a push button switch section.

[0005] As a display device, for example, a light-emitting device having a light-emitting device has been developed. A light-emitting device (also called an EL device or an EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon has features such as being easily thin and lightweight, being capable of high-speed response to input signals, and being capable of being driven by a DC constant voltage power supply, and is therefore applied to display devices. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] US Patent Application Publication No. 2014 / 0056493 Summary of the Invention [Problem to be solved by the invention]

[0007] An object of one embodiment of the present invention is to provide a semiconductor device having a light detection function and a high-resolution display portion.An object of one embodiment of the present invention is to provide a semiconductor device having a light detection function and a high-resolution display portion.An object of one embodiment of the present invention is to provide a semiconductor device having a large display portion and a light detection function.An object of one embodiment of the present invention is to provide a highly reliable semiconductor device having a light detection function.

[0008] An object of one embodiment of the present invention is to provide a manufacturing method for a semiconductor device having a photodetection function and a high-resolution display portion.An object of one embodiment of the present invention is to provide a manufacturing method for a semiconductor device having a photodetection function and a high-resolution display portion.An object of one embodiment of the present invention is to provide a manufacturing method for a semiconductor device having a large display portion and a photodetection function.An object of one embodiment of the present invention is to provide a manufacturing method for a highly reliable semiconductor device having a photodetection function.An object of one embodiment of the present invention is to provide a manufacturing method for a semiconductor device having a photodetection function with high yield.

[0009] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims. [Means for solving the problem]

[0010] One embodiment of the present invention is a semiconductor device having a plurality of pixels. The pixel includes a first pixel circuit. The first pixel circuit includes a first light-receiving device, a second light-receiving device, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a capacitor, and a first wiring. One electrode of the first light-receiving device is electrically connected to the first wiring, and the other electrode of the first light-receiving device is electrically connected to one of the source or drain of the first transistor. One electrode of the second light-receiving device is electrically connected to the first wiring, and the other electrode of the second light-receiving device is electrically connected to one of the source or drain of the second transistor. The other of the source or drain of the second transistor is electrically connected to the other of the source or drain of the first transistor. The other of the source or drain of the first transistor is electrically connected to one electrode of the capacitor. The other of the source or the drain of the first transistor is electrically connected to one of the source or the drain of the third transistor, the other of the source or the drain of the first transistor is electrically connected to the gate of the fourth transistor, and the one of the source or the drain of the fourth transistor is electrically connected to one of the source or the drain of the fifth transistor.

[0011] In the above-described semiconductor device, the first light-receiving device preferably has a function of detecting visible light, and the second light-receiving device preferably has a function of detecting infrared light.

[0012] The semiconductor device preferably includes a second wiring electrically connected to the other of the source and the drain of the third transistor, and the potential of the second wiring is preferably lower than the potential of the first wiring.

[0013] The semiconductor device preferably includes a second wiring electrically connected to the other of the source and the drain of the third transistor, and the potential of the second wiring is preferably higher than the potential of the first wiring.

[0014] In the semiconductor device, the pixel preferably includes a second pixel circuit having a first light-emitting device that emits visible light, and one electrode of the first light-emitting device is electrically connected to the first wiring.

[0015] In the semiconductor device, the pixel preferably includes a third pixel circuit having a second light-emitting device that emits infrared light, and one electrode of the second light-emitting device is electrically connected to the first wiring.

[0016] One embodiment of the present invention is an electronic device including the semiconductor device described above, a second light-emitting device, and a housing. The second light-emitting device has a function of emitting infrared light and a function of emitting light to the outside through the semiconductor device. [Effects of the Invention]

[0017] According to one embodiment of the present invention, a semiconductor device having a light detection function and a high-resolution display portion can be provided. According to one embodiment of the present invention, a semiconductor device having a light detection function and a high-resolution display portion can be provided. According to one embodiment of the present invention, a semiconductor device having a large display portion and a light detection function can be provided. According to one embodiment of the present invention, a highly reliable semiconductor device having a light detection function can be provided.

[0018] According to one embodiment of the present invention, a method for manufacturing a semiconductor device having a photodetection function and a high-resolution display portion can be provided. According to one embodiment of the present invention, a method for manufacturing a semiconductor device having a photodetection function and a high-resolution display portion can be provided. According to one embodiment of the present invention, a method for manufacturing a semiconductor device having a large display portion and a photodetection function can be provided. According to one embodiment of the present invention, a method for manufacturing a highly reliable semiconductor device having a photodetection function can be provided. According to one embodiment of the present invention, a method for manufacturing a semiconductor device having a photodetection function with a high yield can be provided.

[0019] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief explanation of the drawings]

[0020] Fig. 1A is a block diagram showing an example of a display device, and Fig. 1B is a diagram showing an example of a pixel of the display device. 2A and 2B are diagrams showing an example of a pixel circuit. FIG. 3 is a diagram illustrating an example of a pixel circuit. 4A and 4B are block diagrams illustrating an example of a readout circuit. FIG. 5 is a diagram illustrating an example of a display unit of a display device. FIG. 6 is a diagram illustrating an example of a display unit of a display device. FIG. 7 is a diagram illustrating an example of a display device. 8A and 8B are diagrams illustrating an example of a method of operating the display device. FIG. 9 is a diagram illustrating an example of a method of operating the display device. FIG. 10 is a diagram illustrating an example of a display unit of a display device. FIG. 11 is a diagram illustrating an example of a display unit of a display device. 12A and 12B are diagrams showing an example of a display unit of a display device. 13A and 13B are diagrams showing an example of a display unit of a display device. Fig. 14A is a diagram showing an example of a pixel of a display device, and Fig. 14B and Fig. 14C are cross-sectional views showing an example of an electronic device. 15A and 15B are cross-sectional views showing an example of an electronic device. 16A to 16C are diagrams showing an example of a pixel of a display device, and Fig. 16D is a cross-sectional view showing an example of an electronic device. FIG. 17 is a diagram showing an example of the layout of the display device. FIG. 18 is a diagram showing an example of the layout of the display device. FIG. 19 is a diagram showing an example of the layout of a display device. FIG. 20 is a diagram showing an example of the layout of a display device. 21A and 21B are diagrams showing an example of a pixel of a display device, and Fig. 21C and Fig. 21D are cross-sectional views showing an example of an electronic device. FIG. 22 is a diagram showing an example of the layout of a display device. 23A to 23C are diagrams showing an example of a display device. 24A to 24C are diagrams showing an example of an electronic device. 25A and 25B are a top view and a cross-sectional view, respectively, illustrating an example of a display device. 26A to 26D are diagrams showing an example of a method for manufacturing a display device. 27A to 27C are diagrams showing an example of a method for manufacturing a display device. 28A to 28C are diagrams showing an example of a method for manufacturing a display device. 29A to 29C are diagrams showing an example of a method for manufacturing a display device. 30A and 30B are a top view and a cross-sectional view, respectively, illustrating an example of a display device. FIG. 31 is a perspective view showing an example of a display device. Fig. 32A is a cross-sectional view showing an example of a display device, Fig. 32B and Fig. 32C are cross-sectional views showing an example of a transistor. 33A to 33D are diagrams showing configuration examples of a light-emitting device. 34A and 34B are cross-sectional views showing an example of a display device. 35A and 35B are cross-sectional views showing an example of a display device. 36A and 36B are cross-sectional views showing an example of a display device. 37A to 37C are cross-sectional views showing an example of a display device. 38A and 38B are diagrams showing an example of an electronic device. 39A to 39D are diagrams showing an example of an electronic device. 40A to 40F are diagrams showing an example of an electronic device. FIG. 41 is a diagram showing an example of a vehicle. DETAILED DESCRIPTION OF THE INVENTION

[0021] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0022] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0023] For ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0024] It should be noted that the terms "film" and "layer" can be interchangeable depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0025] (Embodiment 1) In this embodiment, a display device will be described as an example of a semiconductor device according to one embodiment of the present invention.

[0026] A display device according to one embodiment of the present invention includes a pixel including a light-emitting device, a first light-receiving device, and a second light-receiving device.

[0027] The display device of one embodiment of the present invention can display an image using a light-emitting device. The display device of one embodiment of the present invention can perform one or both of imaging and sensing using a first light-receiving device or a second light-receiving device.

[0028] A more specific example will be described below with reference to the drawings.

[0029] <Configuration example> 1A shows a block diagram of a display device according to one embodiment of the present invention. A display device 10 shown in FIG. 1A includes a display portion 11, a driver circuit portion 12, a driver circuit portion 13, a driver circuit portion 14, and a circuit portion 15. The display portion 11 includes a plurality of pixels 30 arranged in a matrix.

[0030] 1B shows a configuration example of pixel 30. Pixel 30 includes subpixels G, B, R, PS, and IRS. Subpixels G, B, and R each have a light-emitting function (hereinafter also referred to as a light-emitting function). Subpixels PS and IRS each have a light-receiving function (hereinafter also referred to as a light-receiving function). A display unit of a display device according to one embodiment of the present invention has one or both of an imaging function and a sensing function in addition to a function of displaying an image.

[0031] For example, the subpixel R may be configured to exhibit red, the subpixel G to exhibit green, and the subpixel B to exhibit blue. This allows the display device 10 to display full colors. While the example in which the pixel 30 has three subpixels of different colors is shown here, the pixel 30 may have subpixels of four or more colors. The pixel 30 may also have subpixels that emit light of colors other than red, green, and blue. For example, the pixel 30 may have a subpixel that emits white light or a subpixel that emits yellow light in addition to the above three subpixels.

[0032] The sub-pixel PS has a function of receiving visible light, and the sub-pixel IRS has a function of receiving infrared light.

[0033] Each of the subpixels R, G, and B has a light-emitting device (also called a light-emitting element). The subpixel R has a light-emitting device that emits red light. The subpixel G has a light-emitting device that emits green light. The subpixel B has a light-emitting device that emits blue light.

[0034] Each of the subpixels PS and IRS has a light-receiving device (also called a light-receiving element) that functions as a photoelectric conversion element. The light-receiving device functions as a photoelectric conversion device that detects light incident on the light-receiving device and generates an electric charge. The amount of electric charge generated is determined based on the amount of light incident on the light-receiving device. The subpixel PS has a light-receiving device that has the function of receiving visible light. The subpixel IRS has a light-receiving device that has the function of receiving infrared light. The light-receiving device that has the function of receiving visible light is sensitive to visible light (light with a wavelength of 400 nm or more and less than 700 nm). The light-receiving device that receives infrared light is sensitive to infrared light (light with a wavelength of 700 nm or more and less than 900 nm).

[0035] In Figure 1B, to easily distinguish between the light-emitting device and the light-receiving device, the light-emitting region of subpixel R is labeled R, the light-emitting region of subpixel G is labeled G, the light-emitting region of subpixel B is labeled B, the light-receiving region of subpixel PS is labeled PS, and the light-receiving region of subpixel IRS is labeled IRS.

[0036] 1B, the light-emitting region and the light-receiving region are shown as rectangles, but one embodiment of the present invention is not limited to this. The shapes of the light-emitting region and the light-receiving region are not particularly limited.

[0037] The area of ​​the light-receiving region of the subpixel PS (also simply referred to as the light-receiving area) is preferably smaller than the light-receiving area of ​​the subpixel IRS. By reducing the light-receiving area of ​​the subpixel PS, i.e., narrowing the imaging range, the subpixel PS can capture images with higher resolution than the subpixel IRS. In this case, the subpixel PS can be used for imaging for personal authentication using fingerprints, palm prints, irises, pulse shapes (including vein shapes and artery shapes), faces, etc. Note that the wavelength of light detected by the subpixel PS may be determined appropriately depending on the application.

[0038] The sub-pixel IRS can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). For example, the sub-pixel IRS can detect infrared light, enabling touch detection even in dark places. Note that the wavelength of light detected by the sub-pixel IRS may be determined appropriately depending on the application.

[0039] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when the display device and the object are in direct contact with each other. A near-touch sensor can detect an object even if the object does not touch the display device. For example, a configuration in which the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm, is preferable. This configuration makes it possible to operate the display device without the object directly touching it, in other words, to operate the display device in a contactless (touchless) manner. This configuration reduces the risk of the display device becoming dirty or scratched, or makes it possible to operate the display device without the object directly touching dirt (e.g., dust, viruses, etc.) attached to the display device.

[0040] The display device of one embodiment of the present invention can vary the refresh rate. For example, the refresh rate can be adjusted (for example, within a range of 1 Hz to 240 Hz) depending on the content displayed on the display device, thereby reducing power consumption. Furthermore, the drive frequency of the touch sensor or near-touch sensor may be changed depending on the refresh rate. For example, when the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near-touch sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and an increased response speed of the touch sensor or near-touch sensor.

[0041] The method of detecting an object may be selected depending on the function, taking into account the difference in detection accuracy between the light receiving device of the subpixel PS and the light receiving device of the subpixel IRS. For example, the scrolling function of the display screen may be realized by a near-touch sensor function using the subpixel IRS, and the input function using a keyboard displayed on the screen may be realized by a high-definition touch sensor function using the subpixel PS.

[0042] By incorporating two types of light-receiving devices into one pixel, two additional functions can be added in addition to the display function, making it a multi-function display device.

[0043] In order to capture high-resolution images, it is preferable that sub-pixels PS be provided in all pixels of the display device. On the other hand, sub-pixels IRS used in touch sensors or near-touch sensors do not require as high accuracy as detection using sub-pixels PS, so they may be provided in only some of the pixels of the display device. By making the number of sub-pixels IRS in the display device smaller than the number of sub-pixels PS, the detection speed can be increased.

[0044] FIG. 1B shows an example in which subpixels are arranged in two rows and three columns for one pixel 30. The pixel 30 has three subpixels (subpixel G, subpixel B, and subpixel R) in the top row (first row) and two subpixels (subpixel PS and subpixel IRS) in the bottom row (second row). In other words, the pixel 30 has two subpixels (subpixel G and subpixel PS) in the left column (first column), subpixel B in the center column (second column), and subpixel R in the right column (third column), and further has subpixel IRS across these two columns. Note that the arrangement of the subpixels is not limited to the configuration in FIG. 1B.

[0045] 1A, pixel 30 has pixel circuit 21R, pixel circuit 21G, pixel circuit 21B, and pixel circuit 22. Pixel circuit 21R has a function of controlling the emission of subpixel R. Pixel circuit 21G has a function of controlling the emission of subpixel G. Pixel circuit 21B has a function of controlling the emission of subpixel B. Pixel circuit 22 has a function of controlling the light reception of subpixel PS and the light reception of subpixel IRS. It can be said that subpixels PS and IRS share pixel circuit 22.

[0046] The pixel circuit 22 is electrically connected to a wiring SE, a wiring RE, a wiring TX, a wiring SW, and a wiring WX.

[0047] The wirings SE, RE, TX, and SW are each electrically connected to pixel circuits 22 arranged in the row direction (extension direction of the wirings SE, etc.). The wirings SE, RE, TX, and SW are each electrically connected to a drive circuit unit 14. The drive circuit unit 14 has a function of generating signals for driving the pixel circuits 22 and outputting the signals to the pixel circuits 22 via the wirings SE, RE, TX, and SW. The drive circuit unit 14 has a function of selecting a pixel 30 from which imaging data is to be read out. Specifically, the pixel 30 from which imaging data is to be read out can be selected by supplying a signal to the wiring SE.

[0048] The wiring WX is electrically connected to the pixel circuits 22 arranged in the column direction (extension direction of the wiring WX). The wiring WX is electrically connected to the circuit section 15. The circuit section 15 has a function of receiving signals output from the pixel circuits 22 via the wiring WX and outputting them to the outside as imaging data. The circuit section 15 functions as a readout circuit. The wiring WX can also be called a readout line.

[0049] In this specification, imaging data refers to data corresponding to the amount of light incident on a light receiving device included in the pixel circuit 22. A signal output from the pixel circuit 22 to the circuit unit 15 may also be referred to as imaging data. A signal output from the circuit unit 15 to the outside may also be referred to as imaging data.

[0050] The pixel circuit 21R is electrically connected to the wiring SLR, the wiring GL1, and the wiring GL2. The pixel circuit 21G is electrically connected to the wiring SLG, the wiring GL1, and the wiring GL2. The pixel circuit 21B is electrically connected to the wiring SLB, the wiring GL1, and the wiring GL2.

[0051] The wirings SLR, SLG, and SLB are each electrically connected to the pixel circuit 21R, pixel circuit 21G, or pixel circuit 21B arranged in the column direction (the extension direction of the wirings SLR, etc.). The wirings SLR, SLG, and SLB are each electrically connected to the drive circuit unit 12. The drive circuit unit 12 functions as a source line drive circuit (also referred to as a source driver) and supplies data signals (data potentials) to the pixel circuit 21R, pixel circuit 21G, and pixel circuit 21B via the wirings SLR, SLG, and SLB.

[0052] The wiring GL1 and the wiring GL2 are electrically connected to the pixel circuits 21R, 21G, and 21B arranged in the row direction (the extension direction of the wiring GL1 and the wiring GL2), respectively. The wiring GL1 and the wiring GL2 are electrically connected to the drive circuit unit 13. The drive circuit unit 13 functions as a gate line drive circuit (also called a gate driver) and supplies selection signals to the wiring GL1 and the wiring GL2.

[0053] 1A, by arranging pixel 30 including pixel circuit 21R, pixel circuit 21G, pixel circuit 21B, and pixel circuit 22 in a matrix, the display resolution (number of pixels) and the imaging resolution (number of pixels) can be made the same. Note that high resolution may not be necessary when pixel circuit 22 is used only for the function as a touch panel. In that case, a configuration may be used in which pixels 30 including pixel circuit 22 and pixels not including pixel circuit 22 (i.e., pixels consisting of pixel circuit 21R, pixel circuit 21G, and pixel circuit 21B) are mixed.

[0054] <Configuration example of pixel circuit 22> An example of a pixel circuit that can be applied to pixel circuit 22 is shown in FIG. 2A.

[0055] The pixel circuit 22 includes a transistor M11, a transistor M12, a transistor M13, a transistor M14, a transistor M15, a capacitor C11, a light receiving device PD1, and a light receiving device PD2.

[0056] One terminal of the light receiving device PD1 is electrically connected to one of the source or drain of the transistor M11. The other terminal of the light receiving device PD1 is electrically connected to a wiring CL. The gate of the transistor M11 is electrically connected to a wiring TX. One terminal of the light receiving device PD2 is electrically connected to one of the source or drain of the transistor M15. The other terminal of the light receiving device PD2 is electrically connected to a wiring CL. The gate of the transistor M15 is electrically connected to a wiring SW. The other of the source or drain of the transistor M15 is electrically connected to the other of the source or drain of the transistor M11. The other of the source or drain of the transistor M11 is electrically connected to one electrode of the capacitor C11. The other electrode of the capacitor C11 is electrically connected to a wiring VCP. The other of the source or drain of the transistor M11 is electrically connected to one of the source or drain of the transistor M12. The gate of the transistor M12 is electrically connected to a wiring RS. The other of the source and the drain of the transistor M12 is electrically connected to the wiring VRS. The other of the source and the drain of the transistor M11 is electrically connected to the gate of the transistor M13. The other of the source and the drain of the transistor M13 is electrically connected to the wiring VPI. The other of the source and the drain of the transistor M13 is electrically connected to the source and the drain of the transistor M14. The gate of the transistor M14 is electrically connected to the wiring SE. The other of the source and the drain of the transistor M14 is electrically connected to the wiring WX.

[0057] A signal that controls the conduction / non-conduction of transistor M14 is applied to wiring SE. A signal that controls the conduction / non-conduction of transistor M12 is applied to wiring RS. A signal that controls the conduction / non-conduction of transistor M11 is applied to wiring TX. A signal that controls the conduction / non-conduction of transistor M11 is applied to wiring SW. A constant potential is applied to wiring VCP. A constant potential is applied to wiring VRS as a reset potential. A constant potential is applied to wiring VPI.

[0058] The transistors M11, M12, M14, and M15 function as switches, and the transistor M13 functions as an amplifier.

[0059] 2A, when the cathode of the light receiving device PD1 and the cathode of the light receiving device PD2 are electrically connected to the wiring CL, the potential applied to the wiring VRS is preferably lower than the potential applied to the wiring CL. On the other hand, when the anode of the light receiving device PD1 and the anode of the light receiving device PD2 are electrically connected to the wiring CL, the potential applied to the wiring VRS is preferably higher than the potential applied to the wiring CL.

[0060] The light receiving device PD1 may be a light receiving device having a function of receiving visible light, and the light receiving device PD2 may be a light receiving device having a function of receiving infrared light. Alternatively, the light receiving device PD1 may be a light receiving device having a function of receiving infrared light, and the light receiving device PD2 may be a light receiving device having a function of receiving visible light.

[0061] In the display device of one embodiment of the present invention, the pixel circuit 22 has a function of controlling the light reception of the subpixel PS and a function of controlling the light reception of the subpixel IRS. Compared to a case in which a pixel circuit having a function of controlling the light reception of the subpixel PS and a pixel circuit having a function of controlling the light reception of the subpixel IRS are separately provided, the pixel circuit 22 can reduce the number of transistors, wirings, and the like, and can reduce the pixel size, thereby enabling a high-resolution display device to be provided.

[0062] In the display device of one embodiment of the present invention, it is preferable that all the transistors included in the pixel circuit 22 be transistors (hereinafter also referred to as OS transistors) that have a metal oxide (hereinafter also referred to as oxide semiconductor) in a semiconductor layer in which a channel is formed. OS transistors have extremely low off-state current and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of OS transistors can reduce the power consumption of the display device.

[0063] Alternatively, in a display device according to one embodiment of the present invention, it is preferable that all transistors included in a pixel circuit be transistors having silicon in a semiconductor layer in which a channel is formed (hereinafter also referred to as Si transistors). Examples of silicon include single crystal silicon, polycrystalline silicon, amorphous silicon, and the like. In particular, it is preferable to use a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as LTPS transistor). LTPS transistors have high field-effect mobility and can operate at high speed.

[0064] Alternatively, in the display device of one embodiment of the present invention, two types of transistors are preferably used in the pixel circuit. Specifically, the pixel circuit preferably includes an OS transistor and an LTPS transistor. By changing the material of the semiconductor layer depending on the function required of the transistor, the quality of the pixel circuit can be improved, and the accuracy of sensing or imaging can be increased.

[0065] For example, it is preferable that all of the transistors M11 to M15 be LTPS transistors using low-temperature polysilicon for their semiconductor layers. Alternatively, it is preferable that the transistors M11, M12, and M15 be OS transistors using metal oxide for their semiconductor layers, and the transistor M13 be an LTPS transistor. In this case, the transistor M14 may be either an OS transistor or an LTPS transistor.

[0066] By using OS transistors for the transistors M11, M12, and M15, it is possible to prevent the potential held at the gate of the transistor M13, which is based on the charges generated in the light-receiving devices PD1 and PD2, from leaking through the transistors M11, M12, or M15.

[0067] On the other hand, it is preferable to use an LTPS transistor for the transistor M13. An LTPS transistor can achieve higher field-effect mobility than an OS transistor and has excellent driving capability and current capability. Therefore, the transistor M13 can operate at a higher speed than the transistors M11, M12, and M15. Using an LTPS transistor for the transistor M13 allows the transistor M14 to quickly output a small potential based on the amount of light received by the light receiving device PD1 or the light receiving device PD2.

[0068] That is, in the pixel circuit 22 shown in FIG. 2A, the transistors M11, M12, and M15 have small leakage currents, and the transistor M13 has high driving capability, so that the charges received by the light receiving devices PD1 and PD2 and transferred via the transistors M11 and M15 can be held without leaking and can be read out at high speed.

[0069] The transistor M14 functions as a switch that allows the output from the transistor M13 to flow to the wiring WX, and therefore does not necessarily require a small off-state current, high-speed operation, or the like, as the transistors M11 to M13 and the transistor M15 do. Therefore, low-temperature polysilicon or an oxide semiconductor may be used for the semiconductor layer of the transistor M14.

[0070] Although the transistors are shown as n-channel transistors in FIG. 2A, p-channel transistors can also be used.

[0071] As described above, when high-resolution, clear imaging is required, such as imaging for personal authentication, a small aperture ratio (light-receiving area) of the light-receiving device is preferable. On the other hand, when it is sufficient to detect an approximate position, such as in a near-touch sensor, a large aperture ratio (light-receiving area) of the light-receiving device is preferable. Therefore, it is preferable to configure the aperture ratio (light-receiving area) of the light-receiving device PD1 to be smaller than the aperture ratio (light-receiving area) of the light-receiving device PD2. For imaging that requires high resolution, it is preferable to turn on the transistor M11 and turn off the transistor M15, thereby capturing images using only the light-receiving device PD1. On the other hand, for detection over a large area, it is preferable to turn on both the transistor M11 and the transistor M15, thereby capturing images using both the light-receiving device PD1 and the light-receiving device PD2. This increases the amount of light that can be captured, making it easier to detect objects located far from the display device.

[0072] As described above, the display device of this embodiment can be made a multifunctional display device by incorporating two types of light receiving devices in one pixel, thereby adding two functions in addition to the display function. For example, a high-resolution imaging function and a sensing function such as a touch sensor or near-touch sensor can be realized. Furthermore, by combining a pixel incorporating two types of light receiving devices with a pixel having a different configuration, the functions of the display device can be further increased. For example, a pixel having a light emitting device that emits infrared light or various sensor devices can be used.

[0073] <Configuration example of pixel circuit 21> An example of a pixel circuit that can be applied to pixel circuit 21R, pixel circuit 21G, and pixel circuit 21B is shown in Fig. 2B. The pixel circuit 21 shown in Fig. 2B includes a transistor M1, a transistor M2, a transistor M3, a transistor M4, a capacitor C1, a capacitor C2, and a light-emitting device EL.

[0074] The transistor M1 has a gate electrically connected to a wiring GL1, one of its source and drain electrically connected to a wiring SL, and the other electrically connected to one electrode of a capacitor C1, one electrode of a capacitor C2, and the gate of the transistor M2. The transistor M2 has one of its source and drain electrically connected to a wiring AL, and the other of its source and drain electrically connected to one electrode of a light-emitting device EL, the other electrode of the capacitor C1, and one of the source and drain of the transistor M3. The transistor M3 has a gate electrically connected to a wiring GL1, and the other of its source and drain electrically connected to the other electrode of the capacitor C2. The transistor M4 has a gate electrically connected to a wiring GL2, one of its source and drain electrically connected to the other electrode of the capacitor C2, and the other electrically connected to a wiring V0L. The light-emitting device EL has the other electrode electrically connected to a wiring CL.

[0075] The transistors M1, M3, and M4 function as switches, and the transistor M2 functions as a transistor for controlling the current flowing through the light-emitting device EL.

[0076] Here, it is preferable that all of the transistors M1 to M4 be LTPS transistors. Alternatively, it is preferable that the transistors M1, M3, and M4 be OS transistors and the transistor M2 be an LTPS transistor.

[0077] A data potential is applied to the wiring SL. A selection signal is applied to each of the wirings GL1 and GL2. The selection signal includes a potential that turns on a transistor and a potential that turns off a transistor. A constant potential is applied to the wiring AL. A constant potential is applied to the wiring CL.

[0078] 2B, when the cathode of the light-emitting device EL is electrically connected to the wiring CL, the potential applied to the wiring AL is preferably higher than the potential applied to the wiring CL. On the other hand, when the anode of the light-emitting device EL is electrically connected to the wiring CL, the potential applied to the wiring AL is preferably lower than the potential applied to the wiring CL.

[0079] It should be noted that pixel circuits that can be applied to the pixel circuit 21R, the pixel circuit 21G, and the pixel circuit 21B are not limited to the pixel circuit 21 shown in FIG. 2B.

[0080] <Configuration example of pixel 30> FIG. 3 shows an example of a circuit diagram of a pixel 30 having a pixel circuit 22, a pixel circuit 21R, a pixel circuit 21G, and a pixel circuit 21B.

[0081] Pixel circuit 21R has a light-emitting device ELR that emits red light. Pixel circuit 21G has a light-emitting device ELG that emits green light. Pixel circuit 21B has a light-emitting device ELB that emits blue light. Pixel circuits 21R, 21G, and 21B have similar configurations except for the light-emitting devices.

[0082] 3 shows a configuration in which one electrode of the light receiving device PD1, one electrode of the light receiving device PD2, one electrode of the light emitting device ELR, one electrode of the light emitting device ELG, and one electrode of the light emitting device ELB are each electrically connected to a wiring CL. This configuration reduces the number of wirings required for the pixel 30, allowing the pixel 30 to be smaller in size, resulting in a high-resolution display device. Alternatively, one electrode of the light receiving device PD1, one electrode of the light receiving device PD2, one electrode of the light emitting device ELR, one electrode of the light emitting device ELG, and one electrode of the light emitting device ELB may each be connected to a different wiring.

[0083] The configurations of the pixel circuit 21R, the pixel circuit 21G, and the pixel circuit 21B are not limited to the configuration shown in FIG.

[0084] <Example of readout circuit configuration> An example of a circuit that can be used as a readout circuit is shown in Fig. 4A. The circuit 50 shown in Fig. 4A can be applied to the circuit section 15 shown in Fig. 1A.

[0085] 4A shows a block diagram of the circuit 50. The circuit 50 includes a plurality of circuits 51, a plurality of circuits 52, a circuit 53, a circuit 54, and a circuit 55.

[0086] Signals are input to the circuit 50 from the Kth to K+pth wirings WX[K:K+p] (K is an integer between 1 and N). Signals can be input to one circuit 50 from wirings WX whose number is calculated by dividing the number N (N is an integer between 2 and 1) of pixels 30 arranged in the row direction by an arbitrary integer x. That is, p is an integer that satisfies N / x-1, and signals are input to the circuit 50 from N / x wirings WX. In this case, the display device can be configured to have x circuits 50 as readout circuits. Note that if N is not a multiple of x, the number of wirings WX connected to one circuit 50 can be adjusted appropriately.

[0087] The circuit 51 converts a current output to one of the wirings WX into a voltage and outputs the voltage. The circuit 51 can be a circuit that configures a source follower circuit together with the transistor M13 of the pixel circuit 22 described above.

[0088] A correlated double sampling (CDS) circuit can be suitably used as the circuit 52. The circuit 52 can generate a signal with reduced noise.

[0089] A multiplexer circuit can be used as the circuit 53. The circuit 53 can convert parallel signals input from the multiple circuits 52 into serial signals and output them to the circuit .

[0090] A source follower circuit can be used as the circuit 54. The circuit 54 has a function of amplifying the signal input from the circuit 53 and outputting the amplified signal.

[0091] The circuit 55 can be an analog-to-digital converter. The circuit 55 converts the analog signal input from the circuit 54 into a digital signal S OUT It has the function to convert and output.

[0092] 4B shows an example of a more specific circuit diagram of the circuit 50. FIG. 4B illustrates a circuit 51[j] and a circuit 52[j] connected to the j-th wiring WX[j], a part of the circuit 53, a circuit 54, a circuit 55, and a circuit 56. As for the circuit 53, a part of the circuit connected to the circuit 52[j] is illustrated as a circuit 53[j]. The circuit 53 includes a plurality of circuits 53[j].

[0093] The circuit 51[j] includes a transistor 61 and a transistor 62. The circuit 51[j] is also connected to wirings IVB and VIV, to which constant potentials are respectively supplied. The transistor 62 and the transistor M13 included in the pixel circuit 22 form a source follower circuit. The transistor 61 functions as a constant current source. The transistors 61 and 62 form a current mirror.

[0094] The circuit 52[j] includes transistors 63 to 68, a capacitor 81, and a capacitor 82. The circuit 52[j] is connected to wirings SEL1, SEL2, and SCL to which signals for controlling the conduction state of the transistors are applied, and wirings VCL, CDB, VDD1, and VSS1 to which a constant potential is applied. For example, a high potential can be supplied to the wirings VCL, VDD1, and CDB, and a low potential can be supplied to the wiring VSS1.

[0095] Transistors 66 and 68 form a source follower circuit. Transistor 67 functions as a constant current source and forms a current mirror with transistor 68. A capacitor 81 is provided between the gate of transistor 66 and the output wiring of circuit 51[j]. A signal provided from circuit 51[j] to circuit 52[j] is transmitted to the gate of transistor 66 via capacitor 81.

[0096] The transistor 65 has a function of applying a constant potential (also referred to as an initial potential) to the node SH to which the gate of the transistor 66 is connected. First, the potential of the wiring WX[j] is acquired while the initial potential is applied to the node SH from the wiring VCL. Then, the transistor 65 is turned off, and the transistor M12 included in the pixel circuit 22 is turned on to acquire the potential of the wiring WX[j]. This allows a potential corresponding to the difference from the initial potential to be read as imaging data. By performing such a correlated double sampling operation, a signal with reduced noise can be output from the circuit 50.

[0097] The transistor 63 has a function of adjusting the capacitance value of the CDS circuit. By turning on the transistor 63, the capacitors 81 and 82 are connected in parallel. This improves the sensitivity of the CDS circuit. On the other hand, by turning off the transistor 63, the readout operation can be performed at a higher speed. For example, when capturing an image of an object with low contrast or brightness, the transistor 63 is turned on to increase the capacitance value of the CDS circuit, thereby improving the sensitivity. On the other hand, when high-speed readout is required, the transistor 63 is turned off to decrease the capacitance value of the CDS circuit. These can be switched by a signal applied to the wiring SEL1.

[0098] The transistor 64 has a function of connecting the wiring WX[j] and the node SH to each other. By turning on the transistor 64, a read operation without using correlated double sampling can be performed. These can be switched by a signal applied to the wiring SEL2.

[0099] The circuit 53[j] includes a transistor 69, a capacitor 83, and a capacitor 84. The circuit 53[j] is connected to a wiring SEL3 to which a signal for controlling the conduction state of the transistor is applied and a wiring VDD2 to which a constant potential is applied. The capacitors 83 and 84 have a function of maintaining the potential of the wiring. One or both of the capacitors 83 and 84 may be omitted if unnecessary.

[0100] When the circuit 53[j] is selected from the circuits 53, the transistor 69 is turned on. This allows the signal output from the circuit 52[j] to be output to the circuit 54 via the transistor 69. By sequentially selecting the multiple transistors 69 included in the circuit 53, parallel signals input from the multiple circuits 52 can be converted into serial signals and output to the circuit 54.

[0101] The circuit 54 includes transistors 71 to 74. The circuit 54 is connected to a wiring SFR to which a signal for controlling the conduction state of a transistor is supplied, and wirings VRSF, SFB, VDD3, and VSS3 to which a constant potential is supplied.

[0102] A source follower circuit is configured by the transistor 72 and the transistor 74. The transistor 73 functions as a constant current source and configures a current mirror together with the transistor 74.

[0103] The transistor 71 has a function of resetting the potential of a node to which the gate of the transistor 72 is connected, using a potential applied to the wiring VRSF.

[0104] 4B, a circuit 56 functioning as an amplifier circuit may be provided between the circuit 54 and the circuit 55. The circuit 56 has a function of amplifying a signal input from the circuit 54 and outputting the signal to the circuit 55.

[0105] Here, an example is shown in which n-channel transistors are used as all of the transistors included in the circuits 51, 52, 53, and 54. In this case, it is preferable to use a transistor in which an oxide semiconductor is used for a semiconductor layer in which a channel is formed for each transistor. In particular, it is preferable to use transistors with extremely low off-state current for transistors 63, 64, 65, 69, and 71 that function as switches. Note that this is not a limitation, and transistors containing silicon may be used for some or all of the transistors. Alternatively, p-channel transistors may be used for some or all of the transistors.

[0106] 4B shows an example in which all of the transistors included in the circuits 51, 52, 53, and 54 are transistors whose pair of gates is electrically connected. However, this is not a limitation, and some or all of the transistors may be transistors having a single gate. Alternatively, some or all of the transistors may be transistors whose one gate is electrically connected to one of the source and the drain. Alternatively, some or all of the transistors may be transistors whose one gate is supplied with a constant potential or a signal for controlling the threshold voltage.

[0107] The circuits 51, 52, 53, and 54 are preferably formed on a substrate on which pixels are provided through the same process as the pixels. This reduces the number of components in the display device, thereby reducing costs. An IC chip may be used for one or both of the circuits 56 and 55, or one or both of the circuits 56 and 55 may be formed on a substrate on which pixels are provided.

[0108] The above is a description of an example of the configuration of the read circuit.

[0109] It should be noted that the circuits that can be applied to the circuit section 15 are not limited to the configurations shown in FIGS. 4A and 4B.

[0110] Note that a transistor included in a display device according to one embodiment of the present invention may have a back gate. Supplying the same potential as that of the front gate to the back gate can increase the on-state current of the transistor. Furthermore, supplying a constant potential to the back gate can adjust the threshold voltage of the transistor.

[0111] <Display section configuration example 1> An example of the configuration of the display unit 11 is shown in Figures 5 and 6. The display unit 11 has a configuration in which pixels 30 are arranged in a matrix of M rows and N columns (M and N are each independently an integer of 2 or greater). Figures 5 and 6 show four pixels 30 from the i-th row and j-th column (i and j are each independently an integer of 1 or greater) to the i+1-th row and j+1-th column.

[0112] In this specification and the like, when the same reference numeral is used for multiple elements, and particularly when it is necessary to distinguish between them, the reference numeral may be accompanied by an identifying symbol such as "[1]", "[m]", "[1,1]", "[m,n]", etc. For example, pixel 30 in the ith row and jth column will be referred to as pixel 30[i,j].

[0113] Fig. 5 shows the arrangement of subpixels R, G, B, PS, and IRS. Fig. 6 shows the connection relationship between pixel circuit 21R, pixel circuit 21G, pixel circuit 21B, pixel circuit 22, and each wiring.

[0114] The wirings SE[i], RE[i], TX[i], and SW[i] are electrically connected to the pixel circuits 22[i,j] and 22[i,j+1] arranged in the i-th row, respectively. The wirings SE[i+1], RE[i+1], TX[i+1], and SW[i+1] are electrically connected to the pixel circuits 22[i+1,j] and 22[i+1,j+1] arranged in the i+1-th row, respectively.

[0115] The wiring WX[j] is electrically connected to the pixel circuits 22[i,j] and 22[i+1,j] arranged in the jth column direction. The wiring WX[j+1] is electrically connected to the pixel circuits 22[i,j+1] and 22[i+1,j+1] arranged in the j+1th column direction.

[0116] The wiring GL1[i] and the wiring GL2[i] are electrically connected to the pixel circuits 21R[i,j], 21G[i,j], 21B[i,j], 21R[i,j+1], 21G[i,j+1], and 21B[i,j+1] arranged in the i-th row. The wiring GL1[i+1] and the wiring GL2[i+1] are electrically connected to the pixel circuits 21R[i+1,j], 21G[i+1,j], 21B[i+1,j], 21R[i+1,j+1], 21G[i+1,j+1], and 21B[i+1,j+1] arranged in the i+1-th row.

[0117] The wiring SLR[j] is electrically connected to the pixel circuits 21R[i,j] and 21R[i+1,j] arranged in the jth column. The wiring SLG[j] is electrically connected to the pixel circuits 21G[i,j] and 21G[i+1,j] arranged in the jth column. The wiring SLB[j] is electrically connected to the pixel circuits 21B[i,j] and 21B[i+1,j] arranged in the jth column. The wiring SLR[j+1] is electrically connected to the pixel circuits 21R[i,j+1] and 21R[i+1,j+1] arranged in the jth column. The wiring SLG[j+1] is electrically connected to the pixel circuits 21G[i,j+1] and 21G[i+1,j+1] arranged in the jth column. The wiring SLB[j+1] is electrically connected to the pixel circuits 21B[i, j+1] and 21B[i+1, j+1] arranged in the j+1 column direction.

[0118] <Driving method example> An example of a method for driving pixel circuit 22 will be described using the configuration shown in Fig. 7. Here, an example is given in which the configuration shown in Fig. 4B is used as circuit 50. Fig. 7 shows pixel circuit 22[i,j], pixel circuit 22[i+1,j], and circuit 52[j] that functions as a CDS circuit.

[0119] 8A, 8B, and 9 show timing charts relating to the operation of the pixel circuit 22. 8A, 8B, and 9 show signals input to the wiring TX, the wiring SW, the wiring SE[i] in the i-th row, the wiring RS[i] in the i-th row, the wiring SE[i+1] in the i+1-th row, the wiring RS[i+1] in the i+1-th row, and the wiring SCL.

[0120] First, an example of an operation related to exposure of the sub-pixel PS having a function of receiving visible light will be described with reference to Fig. 8A. Here, exposure refers to the acquisition of imaging data.

[0121] <Before time T11> Before time T11, a low-level potential is applied to the wiring TX, the wiring SW, the wiring SE, and the wiring RS.

[0122] <Period T11-T12> The period from time T11 to time T12 corresponds to an initialization period (also referred to as a reset period). At time T11, a potential (here, a high-level potential) that turns on the transistors is applied to the wiring TX and the wiring RS. A potential (here, a low-level potential) that turns off the transistors is applied to the wiring SW and the wiring SE. This causes the transistors M11 and M12 to be in a conductive state.

[0123] When the transistors M11 and M12 are turned on, the charge stored in the capacitor C11 is initialized (reset). Also, a potential lower than the potential of the cathode electrode is applied to the anode electrode of the light receiving device PD1 from the wiring VRS via the transistors M11 and M12. That is, a reverse bias voltage is applied to the light receiving device PD1.

[0124] <Period T12-T13> The period from time T12 to time T13 corresponds to an exposure period (a period during which imaging data is acquired). At time T12, a low-level potential is applied to the wiring TX and the wiring RS, which turns off the transistors M11 and M12.

[0125] Since the transistor M11 is in a non-conductive state, a reverse bias voltage is applied to the light-receiving device PD1 and maintained in this state. Here, photoelectric conversion occurs due to light (visible light in this case) incident on the light-receiving device PD1, and charge is accumulated in the anode electrode of the light-receiving device PD1.

[0126] The length of the exposure period may be set depending on the sensitivity of the light receiving device PD1, the amount of incident light, etc., but it is preferable to set a period that is at least sufficiently longer than the initialization period.

[0127] <Period T13-T14> The period from time T13 to time T14 corresponds to the transfer period. At time T13, a high-level potential is applied to the line TX. This causes the transistor M11 to be conductive, and the charge accumulated in the light-receiving device PD1 is transferred to one electrode of the capacitor C11 via the transistor M11. This causes the potential of the node to which one electrode of the capacitor C11 is connected to rise in accordance with the amount of charge accumulated in the light-receiving device PD1. As a result, a potential corresponding to the exposure amount of the light-receiving device PD1 is applied to the gate of the transistor M13.

[0128] <After time T14> At time T14, a low-level potential is applied to the line TX. This turns off the transistor M11, and the node connected to the gate of the transistor M13 is set to a floating state. Because the light-receiving device PD1 is constantly exposed to light, turning off the transistor M11 after the transfer operation in the period T13-T14 is completed prevents the potential of the node connected to the gate of the transistor M13 from changing.

[0129] The above is a description of an example of the operation related to exposure of the sub-pixel PS having the function of receiving visible light.

[0130] Next, an example of the operation related to exposure of the sub-pixel IRS having a function of receiving infrared light will be described with reference to FIG. 8B.

[0131] <Before time T21> Before time T21, a low-level potential is applied to the wiring TX, the wiring SW, the wiring SE, and the wiring RS.

[0132] <Period T21-T22> The period from time T21 to time T22 corresponds to an initialization period (also referred to as a reset period). At time T21, a high-level potential is applied to the wiring SW and the wiring RS. A low-level potential is applied to the wiring TX and the wiring SE. This causes the transistors M15 and M12 to be turned on.

[0133] When the transistors M15 and M12 are turned on, the charge stored in the capacitor C11 is initialized (reset). Also, a potential lower than the potential of the cathode electrode is applied to the anode electrode of the light receiving device PD2 from the wiring VRS via the transistors M15 and M12. That is, a reverse bias voltage is applied to the light receiving device PD2.

[0134] <Period T22-T23> The period from time T22 to time T23 corresponds to an exposure period. At time T22, a low-level potential is applied to the wiring SW and the wiring RS, which turns off the transistor M15 and the transistor M12.

[0135] Since the transistor M15 is in a non-conductive state, a reverse bias voltage is applied to the light receiving device PD2 and maintained in this state. Here, photoelectric conversion occurs due to the light (infrared light in this case) incident on the light receiving device PD2, and charge is accumulated in the anode electrode of the light receiving device PD2.

[0136] The length of the exposure period may be set depending on the sensitivity of the light receiving device PD2, the amount of incident light, etc., but it is preferable to set a period that is at least sufficiently longer than the initialization period.

[0137] <Period T23-T24> The period from time T23 to time T24 corresponds to the transfer period. At time T23, a high-level potential is applied to the line SW. This causes the transistor M15 to become conductive, and the charge accumulated in the light-receiving device PD2 is transferred to one electrode of the capacitor C11 via the transistor M15. This causes the potential of the node to which one electrode of the capacitor C11 is connected to rise in accordance with the amount of charge accumulated in the light-receiving device PD2. As a result, a potential corresponding to the exposure amount of the light-receiving device PD2 is applied to the gate of the transistor M13.

[0138] <After time T24> At time T24, a low-level potential is applied to the line SW. This turns off the transistor M15, and the node connected to the gate of the transistor M13 is set to a floating state. Because the light-receiving device PD2 is constantly exposed to light, turning off the transistor M15 after the transfer operation in the period T23-T24 is completed prevents the potential of the node connected to the gate of the transistor M13 from changing.

[0139] The above is a description of an example of the operation related to exposure of the sub-pixel IRS having the function of receiving infrared light.

[0140] Next, an example of the operation related to the readout of the subpixels PS and IRS will be described with reference to Fig. 9. The period T31-T41 indicates the readout of the pixel circuits 22 in the i-th row, and the period T41-T51 indicates the readout of the pixel circuits 22 in the (i+1)-th row.

[0141] <Before time T31> Before time T31, a low-level potential is applied to the wiring TX, the wiring SW, the wiring SE, the wiring RS, and the wiring SCL.

[0142] <Period T31-T34> The period from time T31 to time T34 corresponds to a correlated double sampling (CDS) processing period.

[0143] At time T31, a high-level potential is applied to the wiring SE[i] and the wiring SCL. A low-level potential is applied to the wiring TX and the wiring RS[i]. This causes the transistor M14 in the pixel circuit 22[i,j] and the transistor 65 in the circuit 52[j] to be turned on.

[0144] When the transistor 65 is turned on, the potential of the node SH electrically connected to the gate of the transistor 66 becomes the potential (initial potential) supplied to the wiring VCL. Also, when the transistor M14 of the pixel circuit 22[i,j] is turned on, imaging data is output from the pixel circuit 22[i,j], and a potential corresponding to the imaging data is supplied to one electrode of the capacitor 81.

[0145] At time T32, a low-level potential is applied to the line SCL, which renders the transistor 65 non-conductive.

[0146] When the transistor 65 is turned off, the potential of one electrode of the capacitor 81 is held at a potential corresponding to the imaging data output from the pixel circuit 22[i,j]. At this time, due to feedthrough, the potential of the node SH becomes lower than the potential (initial potential) supplied to the line VCL.

[0147] At time T33, a high-level potential is applied to the line RS[i], which causes the transistor M12 of the pixel circuit 22[i,j] to become conductive.

[0148] When the transistor M12 is turned on, the potential (reset potential) supplied to the wiring VRS is supplied to the circuit 52[j] through the wiring WX[j].

[0149] This allows a potential corresponding to the difference from the initial potential to be read out as imaging data. By performing such a correlated double sampling operation, a signal with reduced noise can be output from circuit 52[j].

[0150] <Period T34-T41> The period from time T34 to time T41 corresponds to the output period.

[0151] At time T34, a low-level potential is applied to the line RS[i]. This causes the transistor M12 of the pixel circuit 22[i,j] to become non-conductive. A potential corresponding to the imaging data is output from the circuit 52[j] to the circuit 53[j].

[0152] The above is the operation related to the readout of the pixel circuits 22 in the i-th row.

[0153] Next, readout is performed on the pixel circuits 22 in the (i+1)th row. The same operation as that in the period T31-T41 described above is performed on the pixel circuits 22 in the (i+1)th row.

[0154] <Period T41-T44> The period from time T41 to time T44 corresponds to a correlated double sampling (CDS) processing period.

[0155] At time T41, a high-level potential is applied to the wiring SE[i+1] and the wiring SCL. A low-level potential is applied to the wiring TX and the wiring RS[i+1]. This causes the transistor M14 in the pixel circuit 22[i+1,j] and the transistor 65 in the circuit 52[j] to be turned on.

[0156] When the transistor 65 is turned on, the potential of the node SH electrically connected to the gate of the transistor 66 becomes the potential (initial potential) supplied to the wiring VCL. Also, when the transistor M14 of the pixel circuit 22[i+1,j] is turned on, imaging data is output from the pixel circuit 22[i+1,j], and a potential corresponding to the imaging data is supplied to one electrode of the capacitor 81.

[0157] At time T42, a low-level potential is applied to the line SCL, which renders the transistor 65 non-conductive.

[0158] When the transistor 65 is turned off, the potential of one electrode of the capacitor 81 is held at a potential corresponding to the imaging data output from the pixel circuit 22[i+1,j]. At this time, due to feedthrough, the potential of the node SH becomes lower than the potential (initial potential) supplied to the line VCL.

[0159] At time T43, a high-level potential is applied to the line RS[i+1], which causes the transistor M12 of the pixel circuit 22[i+1,j] to become conductive.

[0160] When the transistor M12 is turned on, the potential (reset potential) supplied to the wiring VRS is supplied to the circuit 52[j] through the wiring WX[j].

[0161] This allows a potential corresponding to the difference from the initial potential to be read out as imaging data. By performing such a correlated double sampling operation, a signal with reduced noise can be output from circuit 52[j].

[0162] <Period T44-T51> The period from time T44 to time T51 corresponds to the output period.

[0163] At time T44, a low-level potential is applied to the wiring RS[i+1]. This causes the transistor M12 of the pixel circuit 22[i+1,j] to become non-conductive. A potential corresponding to the imaging data is output from the circuit 52[j] to the circuit 53[j].

[0164] <After time T51> At time T51, a low-level potential is applied to the line SE[i+1]. This turns off the transistor M14. This completes the readout of data from the pixel circuits 22 in the (i+1)th row. After time T51, the readout operation of data from the next row onward is performed sequentially.

[0165] The read operation is performed in order from the first row to the Mth row, and M data potentials are output in order to the wiring WX.

[0166] 8A, 8B, and 9, the exposure period and the readout period can be set separately, so that all pixel circuits 22 provided in the display unit 11 can be exposed simultaneously and then the data can be read out sequentially. This makes it possible to realize so-called global shutter driving. When global shutter driving is performed, it is preferable to use transistors that function as switches in the pixel circuits 22 (particularly, transistors M11, M12, and M15) that use oxide semiconductors, which have extremely low leakage current in a non-conducting state.

[0167] While the above example illustrates reading data from all M×N pixel circuits 22, high resolution may not be necessary when the device is used as a touch panel, i.e., when detecting the positional information of an object. In such cases, it is possible to read less data by thinning out the rows, columns, or rows and columns from which data is read. This reduces the readout time and enables a high frame frequency. For example, by reading only odd or even rows, the readout period can be halved. It is also preferable to configure the device so that the readout method can be switched between capturing high-resolution images (e.g., image scanning) and touch sensing.

[0168] The above is a description of an example of a method for driving the pixel circuit 22.

[0169] <Display section configuration example 2> An example different from the display unit 11 shown in FIGS. 5 and 6 is shown in FIGS.

[0170] The display unit 11A shown in FIGS. 10 and 11 differs from the display unit 11 shown in FIGS. 5 and 6 mainly in that a pixel circuit 22 is provided for every two rows of pixels 30. In other words, two adjacent pixels 30 in the column direction in the display unit 11A share one pixel circuit 22. Specifically, one pixel circuit 22[k,j] is provided for pixels 30[i,j] and 30[i+1,j], and one pixel circuit 22[k,j+1] is provided for pixels 30[i,j+1] and 30[i+1,j+1], where k is an integer between 1 and M / 2. In the display unit 11A, two adjacent pixels 30 in the column direction each have one subpixel PS and one subpixel IRS.

[0171] The wirings SE, RE, TX, and SW are provided in every two rows of the pixels 30. Fig. 11 shows an example in which the wirings SE[k], RE[k], TX[k], and SW[k] are provided for the pixels 30 in the i-th row and the pixels 30 in the (i+1)-th row. The wirings SE[k], RE[k], TX[k], and SW[k] are electrically connected to the pixel circuit 22[k,j] and the pixel circuit 22[k,j+1], respectively.

[0172] 10 shows an example in which the sub-pixel PS is provided in the pixel 30 in the i-th row, and the sub-pixel IRS is provided in the pixel 30 in the (i+1)-th row. Note that the arrangement of the sub-pixels PS and the sub-pixels IRS is not limited to the configuration shown in FIG.

[0173] As in a display section 11B shown in FIG. 12A, the subpixels PS and the subpixels IRS may be arranged alternately.

[0174] 12B, a subpixel PS may be provided instead of the subpixel IRS. That is, one pixel circuit 22 may have two light receiving devices that have the function of receiving visible light. In this case, one pixel circuit 22 has the function of controlling the light reception of the two subpixels PS.

[0175] 13A, a subpixel IRS may be provided instead of the subpixel PS. That is, one pixel circuit 22 may have two light receiving devices each having a function of receiving infrared light. In this case, one pixel circuit 22 has a function of controlling the light reception of the two subpixels IRS.

[0176] 10 and 12A show a configuration in which the subpixels PS and IRS are arranged in the row direction, but this is not a limitation of the present invention. The subpixels PS and IRS may be arranged in the column direction, as in a display unit 11E shown in FIG. 13B.

[0177] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0178] (Embodiment 2) In this embodiment, electronic devices including a display device according to one embodiment of the present invention will be described with reference to drawings.

[0179] The display device described in Embodiment 1 can be applied to the electronic devices of one embodiment of the present invention. An example of a pixel included in the display device of one embodiment of the present invention is shown in Figure 14A. Examples of cross-sectional views of electronic devices including the display device of one embodiment of the present invention are shown in Figures 14B and 14C.

[0180] 14A includes subpixels G, B, R, PS, and IRS. The pixel 180A can be explained by referring to the above description of pixel 30, and therefore a detailed description thereof will be omitted.

[0181] 14B and 14C each include a display device 100 and a light source 104 between a housing 103 and a protective member 105. The display device 10 described in Embodiment 1 can be used as the display device 100.

[0182] The light source 104 has a light emitting device that emits infrared light 31IR. For the light source 104, it is preferable to use, for example, a light emitting diode (LED).

[0183] 14B shows an example in which light source 104 is disposed at a position that does not overlap with display device 100. In this case, light emitted from light source 104 is emitted to the outside of the electronic device via protective member 105.

[0184] 14C shows an example in which the display device and the light source 104 are provided overlapping each other. In this case, light emitted from the light source 104 passes through the display device 100 and the protective member 105 and is emitted to the outside of the electronic device.

[0185] 14B and 14C show a cross-sectional structure between the dashed dotted line A1-A2 in Fig. 14A. The display device 100 has a plurality of light-emitting devices and a plurality of light-receiving devices between the substrate 106 and the substrate 102.

[0186] Subpixel R has a light-emitting device 130R that emits red light 31R, subpixel G has a light-emitting device 130G that emits green light 31G, and subpixel B has a light-emitting device 130B that emits blue light 31B.

[0187] The subpixel PS has a light receiving device 150PS, and the subpixel IRS has a light receiving device 150IRS.

[0188] 14B and 14C, the infrared light 31IR emitted by the light source 104 is reflected by the object 108 (here, a finger), and the reflected light 32IR from the object 108 is incident on the light receiving device 150IRS. Although the object 108 is not in contact with the electronic device, the object 108 can be detected using the light receiving device 150IRS.

[0189] In this embodiment, an example is shown in which an object is detected using infrared light 31IR, but the wavelength of light detected by the light receiving device 150IRS is not particularly limited. The light receiving device 150IRS preferably detects infrared light. Alternatively, the light receiving device 150IRS may detect visible light, or may detect both infrared light and visible light.

[0190] In a touch sensor or near-touch sensor, the detection of an object may be made easier by increasing the light receiving area of ​​the light receiving device. Therefore, as shown in FIG. 15A, the detection of the object 108 may be performed using both the light receiving device 150PS and the light receiving device 150IRS.

[0191] 15A, similarly to FIGS. 14B and 14C, infrared light 31IR emitted by light source 104 is reflected by object 108 (a finger in this case), and reflected light 32IR from object 108 is incident on light receiving device 150IRS. Furthermore, in FIG. 15A, green light 31G emitted by light emitting device 130G is also reflected by object 108, and reflected light 32G from object 108 is incident on light receiving device 150PS. Although object 108 is not in contact with an electronic device, object 108 can be detected using light receiving device 150IRS and light receiving device 150PS.

[0192] The light receiving device 150IRS (and the light receiving device 150PS) can also be used to detect an object 108 that is in contact with an electronic device.

[0193] The light-receiving area of ​​the sub-pixel PS is smaller than that of the sub-pixel IRS. The smaller the light-receiving area, the narrower the imaging range, making it possible to suppress blurring in the imaging results and improve resolution. Therefore, using the sub-pixel PS makes it possible to capture images with higher definition or resolution than when using the sub-pixel IRS. For example, the sub-pixel PS can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein patterns and artery patterns), faces, etc.

[0194] 15B, green light 31G emitted from light-emitting device 130G is reflected by object 108, and reflected light 32G from object 108 is incident on light-receiving device 150PS. The fingerprint of object 108 can be captured using light-receiving device 150PS.

[0195] In this embodiment, an example is shown in which the light-receiving device 150PS detects an object using green light 31G emitted by the light-emitting device 130G, but the wavelength of the light detected by the light-receiving device 150PS is not particularly limited. The light-receiving device 150PS preferably detects visible light, and preferably detects one or more of colors such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. The light-receiving device 150PS may also detect infrared light.

[0196] For example, the light receiving device 150PS may have a function to detect red light 31R emitted by the light emitting device 130R. The light receiving device 150PS may also have a function to detect blue light 31B emitted by the light emitting device 130B.

[0197] It is preferable that the light-emitting device that emits the light detected by the light-receiving device 150PS be provided in a subpixel that is positioned close to the subpixel PS within the pixel. For example, in pixel 180A, the light-receiving device 150PS detects the light emitted by the light-emitting device 130G of the subpixel G that is adjacent to the subpixel PS. This configuration can improve detection accuracy.

[0198] In a display device according to one embodiment of the present invention, the configuration of pixel 180A described above may be applied to all pixels, or the configuration of pixel 180A may be applied to some pixels and another configuration may be applied to other pixels.

[0199] For example, a display device of one embodiment of the present invention may include both the pixel 180A shown in Fig. 16A and the pixel 180B shown in Fig. 16B. The pixel 180A shown in Fig. 16A has a structure similar to that of the pixel 30 shown in Fig. 1B, and therefore detailed description thereof will be omitted.

[0200] The pixel 180B shown in FIG. 16B has a subpixel G, a subpixel B, a subpixel R, a subpixel PS, and a subpixel X.

[0201] By using the device that the subpixel X has, various functions can be realized in a display device or an electronic device equipped with the display device.

[0202] For example, the display device or electronic device can have a function of measuring at least one of force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, magnetism, temperature, chemical substance, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, physical condition, pulse, body temperature, and oxygen concentration in blood, using a device possessed by subpixel X.

[0203] Examples of functions that a display device or electronic device may have include a strobe light function, a flashlight function, a deterioration correction function, an acceleration sensor function, an odor sensor function, a physical condition detection function, a pulse detection function, a body temperature detection function, or a blood oxygen concentration measurement function.

[0204] The strobe light function can be realized, for example, by repeating light emission and non-light emission in a short cycle.

[0205] The flashlight function can be realized by a configuration that generates a flash of light by instantaneously discharging light using the principle of an electric double layer, for example.

[0206] The strobe light function and flash light function can be used for crime prevention or self-defense, for example. The light color of the strobe light and flash light is preferably white. However, the light color of the strobe light or flash light is not particularly limited, and the user can select one or more optimal light colors, such as white, blue, purple, blue-purple, green, yellow-green, yellow, orange, and red, as appropriate.

[0207] The degradation correction function includes a function to correct degradation of the light-emitting device of at least one subpixel selected from subpixels G, B, and R. More specifically, if the reliability of the material used in the light-emitting device of subpixel G is poor, subpixel X can be configured to have the same structure as subpixel G, thereby providing two subpixels G in pixel 180B. This configuration doubles the area of ​​subpixel G. Doubling the area of ​​subpixel G can approximately double the reliability compared to a configuration with one subpixel G. Alternatively, by providing two subpixels G in pixel 180B, if one subpixel G becomes non-emitting due to degradation or the like, the other subpixel G can compensate for the emission of the other subpixel G.

[0208] Although the subpixel G has been described above, the subpixels B and R can also be configured in the same manner.

[0209] The acceleration sensor function, odor sensor function, physical condition detection function, pulse detection function, body temperature detection function, and blood oxygen concentration measurement function can be realized by providing a sensor device required for each detection in the subpixel X. Furthermore, it can be said that the display device or electronic device can realize various functions depending on the sensor device provided in the subpixel X.

[0210] 16B, various functions can be imparted to the subpixel X, and a display device having the pixel 180B can be called a multi-function display device or a multi-function panel. Note that the subpixel X may have one or more functions, and the implementer can select the optimum function as appropriate.

[0211] Note that the display device according to one embodiment of the present invention may have a pixel that does not have both the subpixel X and the subpixel IRS and is composed of four subpixels. That is, the display device may have a pixel that has subpixel G, subpixel B, subpixel R, and subpixel PS. Furthermore, the number of subpixels in the display device may vary depending on the pixel. On the other hand, in order to ensure uniform quality of each pixel, it is preferable that all pixels have the same number of subpixels.

[0212] For example, a display device according to one embodiment of the present invention may include both the pixel 180A shown in FIG. 16A and the pixel 180C shown in FIG. 16C.

[0213] The pixel 180C shown in FIG. 16C includes a subpixel G, a subpixel B, a subpixel R, a subpixel PS, and a subpixel IR.

[0214] The sub-pixel IR has a light-emitting device that emits infrared light. That is, the sub-pixel IR can be used as a light source for the sensor. By having a light-emitting device that emits infrared light in the display device, it is not necessary to provide a light source separate from the display device, and the number of components in the electronic device can be reduced.

[0215] FIG. 16D illustrates an example of a cross-sectional view of an electronic device including a display device of one embodiment of the present invention.

[0216] The electronic device shown in FIG. 16D has a display device 100 between a housing 103 and a protective member 105.

[0217] Display device 100 shown in Fig. 16D corresponds to the cross-sectional structure between dashed dotted lines A1-A2 in Fig. 16A and the cross-sectional structure between dashed dotted lines A3-A4 in Fig. 16C. In other words, display device 100 shown in Fig. 16D has pixel 180A and pixel 180C.

[0218] Subpixel R has a light-emitting device 130R that emits red light 31R, subpixel G has a light-emitting device 130G that emits green light 31G, and subpixel B has a light-emitting device 130B that emits blue light 31B.

[0219] The sub-pixel PS has a light receiving device 150PS, and the sub-pixel IRS has a light receiving device 150IRS. The sub-pixel IR has a light emitting device 130IR that emits infrared light 31IR.

[0220] 16D, infrared light 31IR emitted from light-emitting device 130IR is reflected by object 108 (here, a finger), and reflected light 32IR from object 108 is incident on light-receiving device 150IRS. Although object 108 is not in contact with the electronic device, object 108 can be detected using light-receiving device 150IRS.

[0221] 17 to 20 show examples of the layout of the display device.

[0222] The near-touch sensor function can be realized, for example, by illuminating an object (such as a finger, hand, or pen) with a light source fixed at a specific location, detecting the reflected light from the object with multiple sub-pixels IRS, and estimating the position of the object based on the detection intensity ratio at the multiple sub-pixels IRS.

[0223] The pixels 180A having the sub-pixels IRS can be arranged at regular intervals within the display unit, or arranged on the periphery of the display unit.

[0224] By using only some of the pixels to perform near-touch detection, the driving frequency can be increased. In addition, the remaining pixels can be equipped with sub-pixels X and IR, making it possible to realize a multi-functional display device.

[0225] 17 has two types of pixels, pixel 180A and pixel 180B. In the display device 100A, one pixel 180A is provided for every 3×3 pixels (9 pixels), and the configuration of pixel 180B is applied to the remaining pixels.

[0226] The period for arranging the pixels 180A is not limited to one pixel per 3 × 3 pixels. For example, the pixels used for touch detection can be determined as appropriate, such as one pixel per 4 pixels (2 × 2 pixels), one pixel per 16 pixels (4 × 4 pixels), one pixel per 100 pixels (10 × 10 pixels), or one pixel per 900 pixels (30 × 30 pixels).

[0227] 18 has two types of pixels, pixel 180A and pixel 180C. In the display device 100B, one pixel 180A is provided for every 3×3 pixels (9 pixels), and the configuration of pixel 180C is applied to the remaining pixels.

[0228] 19 has two types of pixels, pixel 180A and pixel 180B. In the display device 100C, pixel 180A is provided on the periphery of the display unit, and the configuration of pixel 180B is applied to the other pixels.

[0229] When pixels 180A are provided on the periphery of the display unit, the pixels 180A may be arranged so as to surround all four sides as shown in Figure 19, or may be arranged at the four corners, or one or more may be arranged on each side, and various arrangements can be applied.

[0230] 20 has two types of pixels: pixel 180A and pixel 180C. In the display device 100D, pixel 180A is provided on the periphery of the display unit, and the configuration of pixel 180C is applied to the other pixels.

[0231] 17 and 19, infrared light 31IR emitted from a light source 104 provided outside the display unit of the display device is reflected by an object 108, and reflected light 32IR from the object 108 is incident on multiple pixels 180A. The reflected light 32IR is detected by sub-pixels IRS provided in the pixel 180A, and the position of the object 108 can be estimated based on the detection intensity ratio at the multiple sub-pixels IRS.

[0232] The light source 104 is provided at least outside the display unit of the display device, and may be built into the display device or may be mounted on an electronic device separately from the display device. The light source 104 may be, for example, a light emitting diode that emits infrared light.

[0233] 18 and 20, infrared light 31IR emitted by sub-pixel IR of pixel 180C is reflected by the object 108, and reflected light 32IR from the object 108 is incident on multiple pixels 180A. The reflected light 32IR is detected by sub-pixels IRS provided in pixel 180A, and the position of the object 108 can be estimated based on the detection intensity ratio between the multiple sub-pixels IRS.

[0234] As described above, the layout of the display device can take various forms.

[0235] FIG. 21A shows an example different from the pixels 180A to 180C described above. The pixel 180D shown in FIG. 21A has subpixels G, B, R, IR, PS, and IRS. FIG. 21A shows an example in which subpixels are arranged across two rows and three columns for one pixel 180D. The pixel 180D has three subpixels (subpixels G, B, and R) in the top row (first row) and three subpixels (subpixels IR, PS, and IRS) in the bottom row (second row). In other words, the pixel 180D has two subpixels (subpixel G and subpixel IR) in the left column (first column), two subpixels (subpixel B and subpixel PS) in the center column (second column), and two subpixels (subpixel R and IRS) in the right column (third column). The arrangement of the sub-pixels is not limited to the configuration in FIG. 21A.

[0236] The subpixels G, B, R, IR, PS, and IRS can be described in detail above, and therefore will not be described in detail again.

[0237] As shown in FIG. 21B, pixel 180D has pixel circuit 21R, pixel circuit 21G, pixel circuit 21B, pixel circuit 21IR, and pixel circuit 22. The above descriptions of pixel circuit 21R, pixel circuit 21G, pixel circuit 21B, and pixel circuit 22 can be referenced, and detailed descriptions thereof will be omitted. Pixel circuit 21IR has a function of controlling the light emission of sub-pixel IR. The configuration of pixel circuit 21R, pixel circuit 21G, or pixel circuit 21B can be applied to pixel circuit 21IR. For example, pixel circuit 21 shown in FIG. 2B can be used for pixel circuit 21IR.

[0238] The cross-sectional structure between dashed dotted line A5-A6 in Fig. 21A is shown in Fig. 21C and Fig. 21D. Fig. 21C shows how infrared light 31IR emitted from light-emitting device 130IR is reflected by object 108 (a finger in this case), and reflected light 32IR from object 108 is incident on light-receiving device 150IRS. Fig. 21D shows how green light 31G emitted from light-emitting device 130G is reflected by object 108 (a finger in this case), and reflected light 32G from object 108 is incident on light-receiving device 150PS.

[0239] The display device 100E shown in Fig. 22 has a pixel 180D. As shown in Fig. 22, infrared light 31IR emitted from the pixel 180D is reflected by the object 108 (a finger in this case), and reflected light 32IR from the object 108 is incident on the light receiving device 150IRS included in the pixel 180D. The display device 100E can detect that the object 108 has come into contact with or approached the display device 100E.

[0240] 22 shows an example of a display device including the pixel 180D, but one embodiment of the present invention is not limited to this. A display device may be configured by combining the pixel 180D with one or more of the pixel 180A, the pixel 180B, and the pixel 180C.

[0241] A display device according to one embodiment of the present invention may emit light of a specific color and receive light reflected by an object. Fig. 23A shows, with arrows, red light emitted from the display device and red light reflected by object 108 (a finger in this case) and incident on the display device. Fig. 23B shows, with arrows, infrared light emitted from the display device and infrared light reflected by object 108 (a finger in this case) and incident on the display device.

[0242] The transmittance of the object to red light can be measured by emitting red light while the object is in contact with or close to the display device and allowing the reflected light from the object to enter the display device. Similarly, the transmittance of the object to infrared light can be measured by emitting infrared light while the object is in contact with or close to the display device and allowing the reflected light from the object to enter the display device.

[0243] 23C is an enlarged view of region P indicated by the dashed-dotted line in FIG. 23A. Light 31R emitted from light-emitting device 130R is scattered by the surface and internal biological tissue of object 108, and some of the scattered light travels from inside the biological tissue toward light-receiving device 150PS. This scattered light passes through blood vessel 91, and transmitted light 32R is incident on light-receiving device 150PS.

[0244] Similarly, the infrared light emitted from the light-emitting device 130IR is scattered by the surface and internal biological tissue of the object 108, and some of the scattered light travels from inside the biological tissue toward the light-receiving device 150IRS. This scattered light passes through the blood vessels 91, and the transmitted infrared light enters the light-receiving device 150IRS.

[0245] Here, light 32R is light that has passed through biological tissue 93 and blood vessels 91 (arteries and veins). Because arterial blood pulsates with the heartbeat, the light absorption by the arteries varies depending on the heartbeat. On the other hand, because biological tissue 93 and veins are not affected by the heartbeat, the light absorption by the biological tissue 93 and the light absorption by the veins are constant. Therefore, by removing the component that remains constant over time from the light 32R incident on the display device, the light transmittance of the arteries can be calculated. In addition, the transmittance of red light is lower for hemoglobin that is not bound to oxygen (also called deoxyhemoglobin) than for hemoglobin that is bound to oxygen (also called oxygenated hemoglobin). The transmittance of infrared light is similar for oxygenated hemoglobin and deoxyhemoglobin. By measuring the transmittance of the artery to red light and the transmittance of the artery to infrared light, the ratio of oxygenated hemoglobin to the sum of oxygenated hemoglobin and deoxyhemoglobin, that is, oxygen saturation (hereinafter also referred to as peripheral oxygen saturation (SpO2)), can be calculated. In this way, the display device according to one embodiment of the present invention can function as a reflective pulse oximeter.

[0246] For example, when a finger touches a display unit of a display device, position information of the area touched by the finger is acquired. Then, red light is emitted from pixels in the area touched by the finger and in the vicinity thereof, and the transmittance of the artery for the red light is measured. Next, infrared light is emitted and the transmittance of the artery for the infrared light is measured, thereby calculating oxygen saturation. The order in which the transmittance for red light and the transmittance for infrared light are measured is not particularly limited. The transmittance for infrared light may be measured first, and then the transmittance for red light. While an example of calculating oxygen saturation using a finger has been described here, one embodiment of the present invention is not limited thereto. Oxygen saturation can also be calculated using a site other than a finger. For example, oxygen saturation can be calculated by measuring the transmittance for red light and the transmittance for infrared light while the palm is in contact with the display unit of a display device.

[0247] 24A illustrates an example of an electronic device to which the display device of one embodiment of the present invention is applied. A portable information terminal 400 illustrated in FIG. 24A can be used as, for example, a smartphone. The portable information terminal 400 includes a housing 402 and a display portion 404. The display portion 404 preferably includes the pixel 180D described above. The display device 100E described above can be used for the display portion 404, for example.

[0248] Fig. 24A shows a state in which a finger 406 is in contact with a display unit 404 of a mobile information terminal 400. In Fig. 24A, the area where the touch is detected and an area 408 nearby are indicated by dashed lines.

[0249] The mobile information terminal 400 emits red light from the pixels in the region 408 and detects the red light that enters the display unit 404. Similarly, the oxygen saturation of the finger 406 can be measured by emitting infrared light from the pixels in the region 408 and detecting the infrared light that enters the display unit 404. FIG. 24B shows the pixels in the region 408 being lit. In FIG. 24B, the finger 406 is shown as a transparent image, with only the outline indicated by a dashed line, and the region 408 is hatched. As shown in FIG. 24B, the lit region 408 is hidden by the finger 406 and is difficult for the user to see. This allows oxygen saturation to be measured without causing stress to the user. The mobile information terminal 400 can also measure oxygen saturation at any position within the display unit 404.

[0250] The obtained oxygen saturation level may be displayed on display unit 404. FIG. 24C shows an example of an image 412 indicating the oxygen saturation level displayed in area 410. In FIG. 24C, the text "SpO2 97%" is shown as an example of image 412. Note that image 412 may be an image or may include an image and text. Furthermore, area 410 may be provided at any position on display unit 404.

[0251] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0252] (Embodiment 3) In this embodiment, a display device of one embodiment of the present invention and a manufacturing method thereof will be described with reference to FIGS.

[0253] A display device according to one embodiment of the present invention includes a light-emitting device and a light-receiving device in each pixel. Since the pixel in the display device according to one embodiment of the present invention has a light-receiving function, it is possible to detect contact or proximity of an object while displaying an image. For example, the display device can display an image not only using all of its subpixels but also using some of the subpixels to emit light as a light source and the remaining subpixels to display an image.

[0254] A display device according to one embodiment of the present invention has a display portion in which light-emitting devices are arranged in a matrix, and can display an image on the display portion. Furthermore, light-receiving devices are arranged in a matrix on the display portion, and the display portion has an imaging function and / or a sensing function in addition to an image display function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, an image can be captured or the proximity or contact of an object (such as a finger, a hand, or a pen) can be detected. Furthermore, the display device according to one embodiment of the present invention can use a light-emitting device as a light source for a sensor. Therefore, a light-receiving portion and a light source are not required separately from the display device, and the number of components in an electronic device can be reduced.

[0255] In a display device of one embodiment of the present invention, when light emitted from a light-emitting device included in a display portion is reflected (or scattered) by an object, the light-receiving device can detect the reflected light (or scattered light). Therefore, imaging or touch detection is possible even in a dark place.

[0256] A display device according to one embodiment of the present invention has a function of displaying an image using a light-emitting device, that is, the light-emitting device functions as a display device (also referred to as a display element).

[0257] The light-emitting device preferably uses an EL device such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of light-emitting materials used in EL devices include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). LEDs such as micro LEDs (light-emitting diodes) can also be used as light-emitting devices. A TADF material may be a material in which the singlet excited state and the triplet excited state are in thermal equilibrium. Such TADF materials have a short emission lifetime (excitation lifetime), which can suppress a decrease in efficiency in the high-brightness region of light-emitting devices.

[0258] A display device according to one embodiment of the present invention has a function of detecting light using a light-receiving device.

[0259] When the light receiving device is used as an image sensor, the display device can capture an image using the light receiving device. For example, the display device of the present embodiment can be used as a scanner.

[0260] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. That is, a biometric authentication sensor can be built into the display device. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a biometric authentication sensor is provided separately from the display device, and the electronic device can be made smaller and lighter.

[0261] When the light-receiving device is used as a touch sensor, the display device can detect the proximity or contact of an object using the light-receiving device.

[0262] The light-receiving device can be, for example, a pn-type or pin-type photodiode. The light-receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on the light-receiving device and generates electric charges. The amount of electric charges generated by the light-receiving device is determined based on the amount of light incident on the light-receiving device.

[0263] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0264] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL device.

[0265] Since organic photodiodes have many layers that can be configured in common with organic EL devices, layers that can be configured in common can be deposited together, thereby preventing an increase in the number of film deposition processes.

[0266] For example, one of the pair of electrodes (common electrode) can be a layer common to the light-receiving device and the light-emitting device. Also, it is preferable that at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer be a layer common to the light-receiving device and the light-emitting device.

[0267] Note that a layer shared by a light-receiving device and a light-emitting device may have different functions in the light-emitting device and the light-receiving device. In this specification, components are named based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by a light-receiving device and a light-emitting device may have the same function in the light-emitting device and the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0268] When manufacturing a display device having a plurality of organic EL devices each having a different emission color from its emission layer, it is necessary to form the emission layers each having a different emission color in the shape of an island.

[0269] For example, island-shaped light-emitting layers can be formed by vacuum deposition using a metal mask (also called a shadow mask). However, with this method, deviations from the design occur in the shape and position of the island-shaped light-emitting layers due to various factors, such as the accuracy of the metal mask, misalignment between the metal mask and the substrate, deflection of the metal mask, and the spread of the contours of the formed film due to vapor scattering, making it difficult to achieve high-definition displays and high aperture ratios.

[0270] In a manufacturing method of a display device according to one embodiment of the present invention, an island-shaped pixel electrode (which can also be referred to as a lower electrode) is formed, and a first layer (which can be referred to as an EL layer or a part of an EL layer) including a light-emitting layer emitting light of a first color is formed over the entire surface. Then, a first sacrificial layer is formed on the first layer. Then, a first resist mask is formed on the first sacrificial layer, and the first layer and the first sacrificial layer are processed using the first resist mask to form an island-shaped first layer. Next, a second layer (which can be referred to as an EL layer or a part of an EL layer) including a light-emitting layer emitting light of a second color is formed in an island shape using a second sacrificial layer and a second resist mask, similar to the first layer.

[0271] As described above, in the manufacturing method of a display device according to one embodiment of the present invention, the island-shaped EL layer is formed by forming the EL layer over the entire surface and then processing it, rather than by using a fine metal mask. Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, since the EL layer can be formed separately for each color, it is possible to realize a display device with extremely vivid, high contrast, and high display quality. Furthermore, by providing a sacrificial layer on the EL layer, damage to the EL layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-emitting device.

[0272] Regarding the spacing between adjacent light-emitting devices, it is difficult to make it less than 10 μm using a formation method that uses, for example, a metal mask, but with the above method, it is possible to narrow it to 3 μm or less, 2 μm or less, or even 1 μm or less.

[0273] The pattern of the EL layer itself can also be made much smaller than when a metal mask is used. Furthermore, for example, when a metal mask is used to create separate EL layers, thickness variations occur between the center and edges of the pattern, resulting in a smaller effective area that can be used as the light-emitting region compared to the overall area of ​​the pattern. In contrast, with the above-described manufacturing method, the pattern is formed by processing a film deposited to a uniform thickness, making it possible to achieve a uniform thickness within the pattern, and even with a fine pattern, almost the entire area can be used as the light-emitting region. This makes it possible to manufacture a display device that combines high definition with a high aperture ratio.

[0274] Here, the first layer and the second layer each include at least a light-emitting layer and preferably consist of multiple layers. Specifically, it is preferable to have one or more layers on the light-emitting layer. By having another layer between the light-emitting layer and the sacrificial layer, it is possible to prevent the light-emitting layer from being exposed to the outermost surface during the manufacturing process of the display device, thereby reducing damage to the light-emitting layer. This can improve the reliability of the light-emitting device.

[0275] In a light-emitting device that emits different colors, it is not necessary to separately form all layers constituting the EL layer, and some layers can be formed in the same process. In a manufacturing method of a display device according to one embodiment of the present invention, some layers constituting the EL layer are formed in an island shape for each color, and then the sacrificial layer is removed, and the remaining layers constituting the EL layer and a common electrode (which can also be called an upper electrode) are formed in common for each color.

[0276] The same manufacturing method as for the light-emitting device can be applied to the light-receiving device. The island-shaped active layer (also called the photoelectric conversion layer) of the light-receiving device is formed not using a fine metal mask but by forming a film that will become the active layer on the entire surface and then processing it, so that the island-shaped active layer can be formed with a uniform thickness. In addition, by providing a sacrificial layer on the active layer, damage to the active layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-receiving device.

[0277] [Display device configuration example 1] 25A and 25B show a display device according to one embodiment of the present invention.

[0278] The display device of one embodiment of the present invention may be any of a top-emission type that emits light in a direction opposite to a substrate on which a light-emitting device is formed, a bottom-emission type that emits light toward a substrate on which a light-emitting device is formed, and a dual-emission type that emits light from both sides.

[0279] 25A shows a top view of a display device 100F. The display device 100F has a display section in which a plurality of pixels 110 are arranged in a matrix, and a connection section 140 outside the display section. One pixel 110 is composed of five subpixels: subpixel 110a, subpixel 110b, subpixel 110c, subpixel 110d, and subpixel 110e. The connection section 140 can be referred to as a cathode contact section.

[0280] 25A shows an example in which subpixels are provided across two rows and three columns for one pixel 110. The pixel 110 has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and two subpixels (subpixels 110d and 110e) in the bottom row (second row). In other words, the pixel 110 has two subpixels (subpixels 110a and 110d) in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and subpixel 110e across these two columns.

[0281] In this embodiment, an example is shown in which subpixels 110a, 110b, and 110c each have a light-emitting device that emits light of a different color, and subpixels 110d and 110e each have a light-receiving device with a different light-receiving area. For example, subpixels 110a, 110b, and 110c correspond to subpixels G, B, and R shown in FIG. 14A and other figures. Subpixel 110d corresponds to subpixel PS shown in FIG. 14A and other figures, and subpixel 110e corresponds to subpixel IRS shown in FIG. 14A and other figures.

[0282] The device provided in the subpixel 110e may be different for each pixel, so that some of the subpixels 110e correspond to the subpixel IRS and the other subpixels 110e correspond to the subpixel X (see FIG. 16B) or the subpixel IR (see FIG. 16C).

[0283] 25A shows an example in which the connection unit 140 is located below the display unit in top view, but this is not particularly limited. The connection unit 140 only needs to be provided in at least one location on the upper, right, left, or lower side of the display unit in top view, and may be provided so as to surround all four sides of the display unit. Furthermore, the connection unit 140 may be singular or plural.

[0284] FIG. 25B shows cross-sectional views taken along dashed lines X1-X2, Y3-Y4, and Y1-Y2 in FIG. 25A.

[0285] 25B, in display device 100F, light-emitting device 130a, light-emitting device 130b, light-emitting device 130c, light-receiving device 150d (see FIG. 29B), and light-receiving device 150e are provided on layer 101 including transistors, and protective layer 131 is provided to cover these light-emitting devices and light-receiving devices. Substrate 120 is bonded to protective layer 131 with resin layer 119.

[0286] The layer 101 including the transistors can have, for example, a stacked-layer structure in which a plurality of transistors are provided over a substrate and an insulating layer is provided to cover the transistors. A structural example of the layer 101 including the transistors will be described later in Embodiment 4.

[0287] The light emitting devices 130a, 130b, and 130c each emit light of a different color, and preferably emit light of three colors, for example, red (R), green (G), and blue (B).

[0288] A light-emitting device has an EL layer between a pair of electrodes. In this specification and the like, one of the pair of electrodes may be referred to as a pixel electrode and the other as a common electrode.

[0289] A light-emitting device has a pair of electrodes, one of which functions as an anode and the other as a cathode. In the following, an example will be described in which the pixel electrode functions as the anode and the common electrode functions as the cathode.

[0290] Light-emitting device 130a has a pixel electrode 111a on the transistor-containing layer 101, a first layer 113a on pixel electrode 111a, a sixth layer 114 on first layer 113a, and a common electrode 115 on sixth layer 114. In light-emitting device 130a, first layer 113a and sixth layer 114 can be collectively referred to as an EL layer.

[0291] The first layer 113a has a first hole injection layer 181a on the pixel electrode 111a, a first hole transport layer 182a on the first hole injection layer 181a, a first light-emitting layer 183a on the first hole transport layer 182a, and a first electron transport layer 184a on the first light-emitting layer 183a.

[0292] The sixth layer 114 includes, for example, an electron injection layer, or may include a stack of an electron transport layer and an electron injection layer.

[0293] Light-emitting device 130b has a pixel electrode 111b on the transistor-containing layer 101, a second layer 113b on the pixel electrode 111b, a sixth layer 114 on the second layer 113b, and a common electrode 115 on the sixth layer 114. In light-emitting device 130b, second layer 113b and sixth layer 114 can be collectively referred to as an EL layer.

[0294] The second layer 113b has a second hole injection layer 181b on the pixel electrode 111b, a second hole transport layer 182b on the second hole injection layer 181b, a second light-emitting layer 183b on the second hole transport layer 182b, and a second electron transport layer 184b on the second light-emitting layer 183b.

[0295] Light-emitting device 130c has a pixel electrode 111c on the transistor-containing layer 101, a third layer 113c on the pixel electrode 111c, a sixth layer 114 on the third layer 113c, and a common electrode 115 on the sixth layer 114. In light-emitting device 130c, the third layer 113c and the sixth layer 114 can be collectively referred to as an EL layer.

[0296] The third layer 113c has a third hole injection layer 181c on the pixel electrode 111c, a third hole transport layer 182c on the third hole injection layer 181c, a third light-emitting layer 183c on the third hole transport layer 182c, and a third electron transport layer 184c on the third light-emitting layer 183c.

[0297] The light emitting devices 130a, 130b, and 130c each emit light of a different color, and preferably emit light of three colors, for example, red (R), green (G), and blue (B).

[0298] The light-receiving device has an active layer between a pair of electrodes, one of which may be referred to as a pixel electrode and the other as a common electrode in this specification and the like.

[0299] Of the pair of electrodes in a light-receiving device, one electrode functions as an anode and the other electrode functions as a cathode. The following describes an example in which the pixel electrode functions as the anode and the common electrode functions as the cathode. In other words, by applying a reverse bias between the pixel electrode and the common electrode, the light-receiving device can detect light incident on the light-receiving device, generate electric charges, and extract them as a current.

[0300] The light receiving device 150d (see Figures 28C and 29B) has a pixel electrode 111d on the layer 101 including the transistor, a fourth layer 113d on the pixel electrode 111d, a sixth layer 114 on the fourth layer 113d, and a common electrode 115 on the sixth layer 114.

[0301] The fourth layer 113d includes a fourth hole transport layer 182d on the pixel electrode 111d, a first active layer 185d on the fourth hole transport layer 182d, and a fourth electron transport layer 184d on the first active layer 185d.

[0302] The sixth layer 114 is a layer shared by both the light-emitting device and the light-receiving device. As described above, the sixth layer 114 includes, for example, an electron injection layer. Alternatively, the sixth layer 114 may include a stack of an electron transport layer and an electron injection layer.

[0303] Here, a layer shared by a light-receiving device and a light-emitting device may have different functions in the light-emitting device and in the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by a light-receiving device and a light-emitting device may have the same function in the light-emitting device and in the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0304] The light receiving device 150e has a pixel electrode 111e on the layer 101 including the transistor, a fifth layer 113e on the pixel electrode 111e, a sixth layer 114 on the fifth layer 113e, and a common electrode 115 on the sixth layer 114.

[0305] The fifth layer 113e includes a fifth hole transport layer 182e on the pixel electrode 111e, a second active layer 185e on the fifth hole transport layer 182e, and a fifth electron transport layer 184e on the second active layer 185e.

[0306] The common electrode 115 is electrically connected to the conductive layer 123 provided in the connection portion 140. As a result, the same potential is supplied to the common electrodes 115 of the light-emitting devices of each color.

[0307] A conductive film that transmits visible light and infrared light is used for the electrode from which light is extracted, and a conductive film that reflects visible light and infrared light is preferably used for the electrode from which light is not extracted.

[0308] The pair of electrodes (pixel electrode and common electrode) of the light-emitting device and the light-receiving device can be formed from a metal, an alloy, an electrically conductive compound, a mixture thereof, etc. Specific examples include indium tin oxide (In-Sn oxide, also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, an aluminum alloy (aluminum alloy) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Other examples of usable materials include aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing these metals in combination. Other examples include rare earth metals such as elements belonging to Groups 1 and 2 of the periodic table (e.g., lithium (Li), cesium (Cs), calcium (Ca), and strontium (Sr)), europium (Eu), and ytterbium (Yb), as well as alloys containing these metals in combination, graphene, and the like.

[0309] It is preferable that a micro-optical resonator (microcavity) structure is applied to the light-emitting device and the light-receiving device. Therefore, it is preferable that one of the pair of electrodes of the light-emitting device and the light-receiving device has an electrode that is transparent and reflective to visible light (semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (reflective electrode). When the light-emitting device has a microcavity structure, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting device. When the light-receiving device has a microcavity structure, the light received by the active layer can be resonated between the two electrodes, thereby intensifying the light and improving the detection accuracy of the light-receiving device.

[0310] The semi-transmitting / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode).

[0311] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for a light-emitting device. The visible light reflectance of the semi-transparent / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 -2 Preferably, the transmittance or reflectance of these electrodes for near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less) satisfies the above-mentioned range, similar to the transmittance or reflectance for visible light.

[0312] The first layer 113a, the second layer 113b, and the third layer 113c each have a light-emitting layer that preferably emits light of a different color.

[0313] The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer can contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0314] Examples of light-emitting materials include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and quantum dot materials.

[0315] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0316] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0317] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). One or both of a hole-transporting material and an electron-transporting material may be used as the one or more organic compounds. Furthermore, a bipolar material or a TADF material may be used as the one or more organic compounds.

[0318] The light-emitting layer preferably contains, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triplet Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, the energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting device.

[0319] The first layer 113a, the second layer 113b, and the third layer 113c may further include a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, a substance with high electron-injection properties, an electron-blocking material, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like, as a layer other than the light-emitting layer.

[0320] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0321] For example, the first layer 113a, the second layer 113b, and the third layer 113c may each include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0322] The sixth layer 114 may include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, when the pixel electrodes 111a, 111b, and 111c function as anodes and the common electrode 115 functions as a cathode, the sixth layer 114 preferably includes an electron injection layer.

[0323] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as a composite material containing a hole transport material (e.g., an aromatic amine compound) and an acceptor material (electron acceptor material).

[0324] In a light-emitting device, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a light-receiving device, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer that contains a hole transport material. The hole transport material has a concentration of 1×10 -6 cm 2 A material having a hole mobility of 1 / Vs or more is preferred. Note that other materials can also be used as long as they have a higher hole transporting property than electron transporting property. The hole transporting material is preferably a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton).

[0325] In a light-emitting device, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In a light-receiving device, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material has a concentration of 1×10 -6 cm 2A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of the electron-transporting material include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0326] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. A composite material containing an electron transport material and a donor material (electron donor material) can also be used as the material with high electron injection properties.

[0327] The electron injection layer may be formed of, for example, lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO x ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used.

[0328] Alternatively, an electron transporting material may be used as the electron injection layer. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring may be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring may be used.

[0329] The lowest unoccupied molecular orbital (LUMO) of an organic compound having an unshared electron pair is preferably -3.6 eV or more and -2.3 eV or less. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, etc.

[0330] Examples of organic compounds with lone electron pairs include 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz). NBPhen has a higher glass transition temperature (Tg) and better heat resistance than BPhen.

[0331] The fourth layer 113d and the fifth layer 113e each have an active layer. The fourth layer 113d and the fifth layer 113e may have active layers with the same configuration or different configurations. For example, if the light-receiving device has a microcavity structure, the fourth layer 113d and the fifth layer 113e can detect light of different wavelengths even if the active layer configuration is the same. Note that the microcavity structure can be fabricated by changing the thickness of the pixel electrode or the optical adjustment layer in the light-receiving devices 150d and 150e. In this case, the fourth layer 113d and the fifth layer 113e may have the same configuration.

[0332] The first active layer 185d and the second active layer 185e each include a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor included in the active layer. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (for example, vacuum deposition), allowing the use of a common manufacturing device.

[0333] The active layer is made of n-type semiconductor material, such as fullerene (C 60 , C 70 Examples of electron-accepting organic semiconductor materials include fullerene derivatives and other fullerenes. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when the π-electron conjugation (resonance) spreads on a plane, as in benzene, the electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread of π-electrons. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as light-receiving devices. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C 60It is preferred because it has a larger π-electron conjugated system and a broad absorption band in the long wavelength region compared to [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviation: ICBA).

[0334] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0335] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0336] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Further examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0337] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0338] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0339] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0340] The fourth layer 113d and the fifth layer 113e may further include, as a layer other than the active layer, a layer containing a substance having a high hole-transporting property, a substance having a high electron-transporting property, a bipolar substance (a substance having high electron-transporting property and high hole-transporting property), etc. Furthermore, the fourth layer 113d and the fifth layer 113e may include various functional layers that can be used for the first layer 113a, the second layer 113b, and the third layer 113c.

[0341] The light-receiving device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-receiving device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0342] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole-transporting materials, and inorganic compounds such as zinc oxide (ZnO) can be used as electron-transporting materials.

[0343] The active layer can be made of a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (PBDB-T) or a PBDB-T derivative, which functions as a donor. For example, an acceptor material can be dispersed in PBDB-T or a PBDB-T derivative.

[0344] The active layer may contain a mixture of three or more materials. For example, to expand the wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0345] It is preferable to provide a protective layer 131 on the light-emitting devices 130a, 130b, and 130c and the light-receiving devices 150d and 150e. By providing the protective layer 131, the reliability of the light-emitting devices and the light-receiving devices can be improved.

[0346] There is no restriction on the conductivity of the protective layer 131. The protective layer 131 can be made of at least one of an insulating film, a semiconductor film, and a conductive film.

[0347] The protective layer 131 having an inorganic film can prevent oxidation of the common electrode 115 and suppress impurities (moisture, oxygen, etc.) from entering the light-emitting devices 130a, 130b, 130c and the light-receiving devices 150d, 150e, thereby suppressing deterioration of the light-emitting devices and the light-receiving devices and improving the reliability of the display device.

[0348] The protective layer 131 can be formed using an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film.

[0349] In this specification and elsewhere, an oxynitride refers to a material having a composition in which oxygen is contained in a larger amount than nitrogen, and a nitride oxide refers to a material having a composition in which nitrogen is contained in a larger amount than oxygen.

[0350] The protective layer 131 preferably includes an insulating nitride film or an insulating nitride oxide film, and more preferably includes an insulating nitride film.

[0351] The protective layer 131 may be formed using an inorganic film containing In-Sn oxide (also referred to as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO). The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0352] When light emitted from the light-emitting device is extracted through the protective layer 131, it is preferable that the protective layer 131 has high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0353] For example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used as the protective layer 131. By using such a laminated structure, impurities (water, oxygen, etc.) can be prevented from entering the EL layer side.

[0354] Furthermore, the protective layer 131 may include an organic film. For example, the protective layer 131 may include both an organic film and an inorganic film.

[0355] The ends of each of the pixel electrodes 111 a , 111 b , and 111 c are covered with an insulating layer 121 .

[0356] In this specification, etc., a device fabricated using a metal mask or FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.

[0357] In this specification, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification, a light-emitting device that can emit white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0358] Light-emitting devices can be broadly divided into single-structure and tandem-structure devices. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, two or more light-emitting layers may be selected so that the light emitted from each of the two or more light-emitting layers has a complementary color relationship. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary, a configuration in which the entire light-emitting device emits white light can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0359] A tandem-structured device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light, light from the light-emitting layers of the multiple light-emitting units may be combined to obtain white light. The configuration for obtaining white light is the same as that of the single-structured device. In a tandem-structured device, it is preferable to provide an intermediate layer such as a charge-generating layer between the multiple light-emitting units.

[0360] When comparing the above-mentioned white light-emitting devices (single structure or tandem structure) with light-emitting devices with SBS structure, the light-emitting devices with SBS structure can reduce power consumption compared to white light-emitting devices. If you want to keep power consumption low, it is preferable to use a light-emitting device with SBS structure. On the other hand, the manufacturing process of white light-emitting devices is simpler than that of light-emitting devices with SBS structure, so they are preferable because they can reduce manufacturing costs or increase manufacturing yields.

[0361] The display device of this embodiment can reduce the distance between light-emitting devices. Specifically, the distance between light-emitting devices can be 1 μm or less, preferably 500 nm or less, and more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the display device of this embodiment has a region where the distance between the side surface of the first layer 113a and the side surface of the second layer 113b or the distance between the side surface of the second layer 113b and the side surface of the third layer 113c is 1 μm or less, preferably 0.5 μm (500 nm) or less, and more preferably 100 nm or less.

[0362] The distance between the light-emitting device and the light-receiving device can also be within the above range. Furthermore, to suppress leakage between the light-emitting device and the light-receiving device, it is preferable to make the distance between the light-emitting device and the light-receiving device wider than the distance between the light-emitting devices. For example, the distance between the light-emitting device and the light-receiving device can be 8 μm or less, 5 μm or less, or 3 μm or less.

[0363] [Example of a display device manufacturing method] Next, an example of a method for manufacturing a display device will be described with reference to Fig. 26 to Fig. 29. Fig. 26A to Fig. 26D show a cross-sectional view taken along dashed lines X1-X2, X3-X4, and Y1-Y2 in Fig. 25A. Fig. 27 to Fig. 29 are similar to Fig. 26.

[0364] Thin films (insulating films, semiconductor films, conductive films, etc.) that make up display devices can be formed using methods such as sputtering, chemical vapor deposition (CVD), vacuum evaporation, pulsed laser deposition (PLD), and ALD. CVD methods include plasma enhanced chemical vapor deposition (PECVD) and thermal CVD. One type of thermal CVD method is metal organic chemical vapor deposition (MOCVD).

[0365] Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, and knife coating.

[0366] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting devices. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, as well as chemical vapor deposition (CVD). In particular, functional layers included in the EL layer (e.g., hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer) can be formed by vapor deposition (e.g., vacuum deposition), coating methods (e.g., dip coating, die coating, bar coating, spin coating, spray coating), printing methods (e.g., inkjet printing, screen printing, offset printing, flexography, gravure printing, microcontact printing, etc.).

[0367] When processing the thin film that constitutes the display device, it can be processed using a photolithography method or the like. Alternatively, the thin film may be processed using a nanoimprint method, a sandblasting method, a lift-off method or the like. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0368] There are two typical photolithography methods: One is a method in which a resist mask is formed on the thin film to be processed, the thin film is processed by etching or the like, and then the resist mask is removed. The other is a method in which a photosensitive thin film is formed, and then the thin film is exposed to light and developed to be processed into the desired shape.

[0369] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure can also be performed using immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays can also be used as the light used for exposure. Instead of light used for exposure, an electron beam can also be used. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0370] For etching the thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0371] 26A, pixel electrodes 111a, 111b, 111c, 111d, and 111e and a conductive layer 123 are formed on a layer 101 including transistors. Each pixel electrode is provided in a display portion, and the conductive layer 123 is provided in a connection portion 140.

[0372] Next, the insulating layer 121 that covers the ends of the pixel electrodes 111a, 111b, 111c, 111d, and 111e and the ends of the conductive layer 123 is formed.

[0373] Then, as shown in FIG. 26B, a first hole injection layer 181A, a first hole transport layer 182A, a first light-emitting layer 183A, and a first electron transport layer 184A are formed in this order on each pixel electrode and on the insulating layer 121, a first sacrificial layer 118A is formed on the first electron transport layer 184A, and a second sacrificial layer 119A is formed on the first sacrificial layer 118A.

[0374] FIG. 26B shows an example in which, in the cross-sectional view between Y1 and Y2, the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, the first electron transport layer 184A, the first sacrificial layer 118A, and the second sacrificial layer 119A are all provided on the conductive layer 123, but is not limited to this.

[0375] For example, first hole injection layer 181A, first hole transport layer 182A, first light-emitting layer 183A, first electron transport layer 184A, and first sacrificial layer 118A may not overlap with conductive layer 123. Furthermore, the ends of first hole injection layer 181A, first hole transport layer 182A, first light-emitting layer 183A, and first electron transport layer 184A on the connection portion 140 side may be located more inward than the ends of first sacrificial layer 118A and second sacrificial layer 119A. For example, by using a mask for defining the film formation area (also called an area mask or a rough metal mask to distinguish it from a fine metal mask), it is possible to change the regions where the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A are formed, and the first sacrificial layer 118A and the second sacrificial layer 119A are formed. In one embodiment of the present invention, a light-emitting device is formed using a resist mask, and by combining it with an area mask as described above, the light-emitting device can be manufactured by a relatively simple process.

[0376] The materials that can be used for the pixel electrodes are as described above. The pixel electrodes can be formed by, for example, sputtering or vacuum deposition.

[0377] The insulating layer 121 can have a single layer structure or a stacked layer structure using one or both of an inorganic insulating film and an organic insulating film.

[0378] Examples of organic insulating materials that can be used for the insulating layer 121 include acrylic resins, epoxy resins, polyimide resins, polyamide resins, polyimideamide resins, polysiloxane resins, benzocyclobutene-based resins, and phenolic resins. In addition, the inorganic insulating film that can be used for the insulating layer 121 can be the inorganic insulating film that can be used for the protective layer 131.

[0379] When an inorganic insulating film is used as the insulating layer 121 covering the edge of the pixel electrode, impurities are less likely to enter the light-emitting device than when an organic insulating film is used, thereby improving the reliability of the light-emitting device. When an organic insulating film is used as the insulating layer 121 covering the edge of the pixel electrode, step coverage is higher and the insulating layer is less affected by the shape of the pixel electrode than when an inorganic insulating film is used. This prevents short circuits in the light-emitting device. Specifically, when an organic insulating film is used as the insulating layer 121, the insulating layer 121 can be processed into a tapered shape. In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of the structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle (also called the taper angle) between the inclined side surface and the substrate surface is less than 90°.

[0380] Note that the insulating layer 121 does not necessarily have to be provided. By not providing the insulating layer 121, the aperture ratio of the subpixels can be increased in some cases. Alternatively, the distance between the subpixels can be narrowed in some cases, thereby improving the definition or resolution of the display device.

[0381] The first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A are layers that will later become the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a, respectively. Therefore, the configurations applicable to the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a described above can be applied to these layers. The first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like. The first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A may each be formed using a premix material. In this specification and the like, a premix material refers to a composite material in which multiple materials are blended or mixed in advance.

[0382] In this embodiment, an example is shown in which the sacrificial layer has a two-layer structure of a first sacrificial layer and a second sacrificial layer, but the sacrificial layer may have a single-layer structure or a laminated structure of three or more layers. For the sacrificial layer, a film having high resistance to processing conditions for first hole injection layer 181A, first hole transport layer 182A, first light-emitting layer 183A, and first electron transport layer 184A, as well as various functional layers (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, active layer, etc.) formed in subsequent steps, specifically a film having a high etching selectivity, is used.

[0383] The sacrificial layer can be formed by, for example, sputtering, ALD (thermal ALD, PEALD), or vacuum deposition. Note that a formation method that causes less damage to the EL layer is preferred, and therefore, it is preferable to form the sacrificial layer by ALD or vacuum deposition rather than by sputtering.

[0384] The sacrificial layer is preferably a film that can be removed by wet etching, which can reduce damage to first hole injection layer 181A, first hole transport layer 182A, first light-emitting layer 183A, and first electron transport layer 184A during processing of the sacrificial layer compared to when dry etching is used.

[0385] In the process of processing the various sacrificial layers in the method for manufacturing the display device of this embodiment, it is desirable that the various functional layers (hole injection layer, hole transport layer, light emitting layer, active layer, electron transport layer, etc.) constituting the light emitting device and the light receiving device are not easily processed, and that the various sacrificial layers are not easily processed in the process of processing the functional layers. It is desirable to select the material and processing method for the sacrificial layer and the processing method for the functional layer taking these factors into consideration.

[0386] The sacrificial layer may be, for example, a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic film such as an inorganic insulating film.

[0387] The sacrificial layer can be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or an alloy material containing such a metal material.

[0388] The sacrificial layer can be made of a metal oxide such as In-Ga-Zn oxide. For example, an In-Ga-Zn oxide film can be formed as the sacrificial layer by sputtering. Other materials that can be used include indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), and indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide). Alternatively, silicon-containing indium tin oxide can be used.

[0389] Instead of the gallium, an element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used. In particular, it is preferable that M is one or more elements selected from gallium, aluminum, and yttrium.

[0390] The sacrificial layer can be made of any of the various inorganic insulating films that can be used for the protective layer 131. In particular, an oxide insulating film is preferable because it has higher adhesion to the EL layer than a nitride insulating film. For example, the sacrificial layer can be made of an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide. For example, an aluminum oxide film can be formed as the sacrificial layer by the ALD method. The ALD method is preferable because it can reduce damage to the underlying layer (particularly the EL layer, etc.).

[0391] For example, the sacrificial layer may be a stacked structure of an In-Ga-Zn oxide film formed by sputtering and an aluminum oxide film formed on the In-Ga-Zn oxide film by ALD. Alternatively, the sacrificial layer may be a stacked structure of an aluminum oxide film formed by ALD and an In-Ga-Zn oxide film formed on the aluminum oxide film by sputtering. Alternatively, the sacrificial layer may be a single-layer structure of an aluminum oxide film formed by ALD.

[0392] Next, as shown in FIG. 26C, a resist mask 190a is formed on the second sacrificial layer 119A. The resist mask can be formed by applying a photosensitive resin (photoresist) and then exposing and developing it. The resist mask 190a is provided in a position overlapping with the pixel electrode 111a. It is preferable that the resist mask 190a does not overlap with the pixel electrodes 111b, 111c, 111d, and 111e or the conductive layer 123. When the resist mask 190a overlaps with the pixel electrodes 111b, 111c, 111d, and 111e or the conductive layer 123, it is preferable that an insulating layer 121 be interposed therebetween.

[0393] Then, as shown in FIG. 26D, a portion of the second sacrificial layer 119A is removed using the resist mask 190a. This allows the region of the second sacrificial layer 119A that is not overlapped by the resist mask 190a to be removed. Therefore, the second sacrificial layer 119a remains in the position overlapping with the pixel electrode 111a. Thereafter, the resist mask 190a is removed.

[0394] 27A, a portion of the first sacrificial layer 118A is removed using the second sacrificial layer 119a. This allows the region of the first sacrificial layer 118A that does not overlap with the second sacrificial layer 119a to be removed. Therefore, a laminated structure of the first sacrificial layer 118a and the second sacrificial layer 119a remains in the position that overlaps with the pixel electrode 111a.

[0395] 27B, first sacrificial layer 118a and second sacrificial layer 119a are used to remove a portion of first hole injection layer 181A, a portion of first hole transport layer 182A, a portion of first light-emitting layer 183A, and a portion of first electron transport layer 184A. This removes the regions of first hole injection layer 181A, first hole transport layer 182A, first light-emitting layer 183A, and first electron transport layer 184A that are not overlapped with first sacrificial layer 118a and second sacrificial layer 119a. This exposes pixel electrodes 111b, 111c, 111d, and 111e, and conductive layer 123. Then, a layered structure of the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, the first electron transport layer 184a, the first sacrificial layer 118a, and the second sacrificial layer 119a remains on the pixel electrode 111a. The layered structure of the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a is also referred to as the first layer 113a.

[0396] The first sacrificial layer 118A and the second sacrificial layer 119A can be processed by wet etching or dry etching, respectively. The first sacrificial layer 118A and the second sacrificial layer 119A are preferably processed by anisotropic etching.

[0397] Compared to the case of using dry etching, the use of wet etching can reduce damage to first hole injection layer 181A, first hole transport layer 182A, first light-emitting layer 183A, and first electron transport layer 184A during processing of the sacrificial layer. When using wet etching, it is preferable to use a chemical solution such as a developer, a tetramethylammonium hydroxide aqueous solution (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0398] When dry etching is used, deterioration of first hole injection layer 181A, first hole transport layer 182A, first light-emitting layer 183A, and first electron transport layer 184A can be suppressed by not using a gas containing oxygen as an etching gas. When dry etching is used, it is preferable to use a gas containing a noble gas (also called a rare gas) such as CF4, C4F8, SF6, CHF3, Cl2, HO, BCl3, or He as an etching gas.

[0399] By forming the sacrificial layer in a stacked structure, some layers can be processed using the resist mask 190a, and after removing the resist mask 190a, the remaining layers can be processed using the resist mask 190a as a hard mask.

[0400] For example, after processing the second sacrificial layer 119A using the resist mask 190a, the resist mask 190a is removed by ashing using oxygen plasma or the like. At this time, the first sacrificial layer 118A is located on the outermost surface, and the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A are not exposed. Therefore, damage to the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be suppressed in the process of removing the resist mask 190a. Then, the first sacrificial layer 118A can be processed using the second sacrificial layer 119a as a hard mask, and the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be processed using the first sacrificial layer 118a and the second sacrificial layer 119a as hard masks.

[0401] The first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A are preferably processed by anisotropic etching. Anisotropic dry etching is particularly preferred. The etching gas used is preferably a nitrogen-containing gas, a hydrogen-containing gas, a noble gas, a nitrogen and argon-containing gas, or a nitrogen and hydrogen-containing gas. By not using an oxygen-containing gas as the etching gas, deterioration of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be suppressed.

[0402] Next, as shown in FIG. 27C, a second hole injection layer 181B, a second hole transport layer 182B, a second light-emitting layer 183B, and a second electron transport layer 184B are formed in this order on the second sacrificial layer 119a, the pixel electrodes 111b, 111c, 111d, and 111e, and the insulating layer 121, a first sacrificial layer 118B is formed on the second electron transport layer 184B, and a second sacrificial layer 119B is formed on the first sacrificial layer 118B.

[0403] The second hole injection layer 181B, the second hole transport layer 182B, the second light-emitting layer 183B, and the second electron transport layer 184B are layers that will later become the second hole injection layer 181b, the second hole transport layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b, respectively. The second light-emitting layer 183b emits light of a different color from the first light-emitting layer 183a. The structures and materials that can be applied to the second hole injection layer 181b, the second hole transport layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b are similar to those of the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a, respectively. The second hole transport layer 182B, the second light-emitting layer 183B, and the second electron transport layer 184B can be formed using the same method as that for the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A, respectively.

[0404] The first sacrificial layer 118B and the second sacrificial layer 119B can be formed using materials that can be applied to the first sacrificial layer 118A and the second sacrificial layer 119A.

[0405] 27C, a resist mask 190b is formed on the first sacrificial layer 118B. The resist mask 190b is provided at a position overlapping the pixel electrode 111b.

[0406] Next, using the resist mask 190b, a portion of the second sacrificial layer 119B is removed. This allows the region of the second sacrificial layer 119B that is not overlapped by the resist mask 190b to be removed. Therefore, the second sacrificial layer 119b remains in the position overlapping with the pixel electrode 111b. Thereafter, as shown in FIG. 28A, the resist mask 190b is removed.

[0407] Next, using the second sacrificial layer 119b as a hard mask, the first sacrificial layer 118B is processed to form the first sacrificial layer 118b. Then, as shown in FIG. 28B, using the first sacrificial layer 118b and the second sacrificial layer 119b as hard masks, the second hole injection layer 181B, the second hole transport layer 182B, the second light-emitting layer 183B, and the second electron transport layer 184B are processed to form the second hole injection layer 181b, the second hole transport layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b. The stacked structure of the second hole injection layer 181b, the second hole transport layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b is also referred to as the second layer 113b.

[0408] The first sacrificial layer 118B and the second sacrificial layer 119B can be processed using a method applicable to processing the first sacrificial layer 118A and the second sacrificial layer 119A. The second hole injection layer 181B, the second hole transport layer 182B, the second light-emitting layer 183B, and the second electron transport layer 184B can be processed using a method applicable to processing the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A. The resist mask 190b can be removed by a method and at a timing applicable to removing the resist mask 190a.

[0409] In a similar manner, a stacked structure of a third layer 113c, a first sacrificial layer 118c, and a second sacrificial layer 119c is formed on the pixel electrode 111c, a stacked structure of a fourth layer 113d, a first sacrificial layer 118d, and a second sacrificial layer 119d is formed on the pixel electrode 111d, and a stacked structure of a fifth layer 113e, a first sacrificial layer 118e, and a second sacrificial layer 119e is formed on the pixel electrode 111e. Note that, although an example in which the fourth layer 113d and the fifth layer 113e have different structures is shown in this embodiment, when the fourth layer 113d and the fifth layer 113e have the same structure, they can be manufactured in the same process.

[0410] Note that the resist mask provided for forming the fifth layer 113e is preferably provided to overlap the conductive layer 123. As a result, as shown in Fig. 28C, a stacked structure of the first sacrificial layer 118e and the second sacrificial layer 119e remains on the conductive layer 123. This is preferable because damage to the conductive layer 123 can be suppressed in the subsequent step of removing the first sacrificial layer and the second sacrificial layer.

[0411] 29A , the first sacrificial layers 118a, 118b, 118c, 118d, and 118e and the second sacrificial layers 119a, 119b, 119c, 119d, and 119e are removed, thereby exposing the first electron transport layer 184a on the pixel electrode 111a, the second electron transport layer 184b on the pixel electrode 111b, the third electron transport layer 184c on the pixel electrode 111c, the fourth electron transport layer 184d on the pixel electrode 111d, and the fifth electron transport layer 184e on the pixel electrode 111e, and the conductive layer 123 at the connection portion 140.

[0412] The sacrificial layer removal process can be performed using the same method as the sacrificial layer processing process. In particular, using a wet etching method can reduce damage to the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e when removing the sacrificial layer compared to using a dry etching method.

[0413] Next, as shown in FIG. 29B, a sixth layer 114 is formed to cover the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, the fifth layer 113e, and the insulating layer 121, and a common electrode 115 is formed on the sixth layer 114, the insulating layer 121, and the conductive layer 123.

[0414] The materials that can be used for the sixth layer 114 are as described above. The layers that make up the sixth layer 114 can be formed by a deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like. The layers that make up the sixth layer 114 may also be formed using a premix material. The sixth layer 114 does not have to be provided if it is not necessary.

[0415] The above-mentioned materials can be used for the common electrode 115. The common electrode 115 can be formed by, for example, sputtering or vacuum deposition.

[0416] Then, as shown in FIG. 29B, a protective layer 131 is formed on the common electrode 115.

[0417] The materials that can be used for the protective layer 131 are as described above. Methods for forming the protective layer 131 include vacuum deposition, sputtering, CVD, and ALD. The protective layer 131 may have a single-layer structure or a multilayer structure. For example, the protective layer 131 may have a multilayer structure of two layers formed using different film formation methods.

[0418] Although FIG. 29B shows an example in which the sixth layer 114 penetrates into the region between the first layer 113a and the second layer 113b, a void 133 may be formed in the region as shown in FIG. 29C.

[0419] The gap 133 contains, for example, one or more selected from air, nitrogen, oxygen, carbon dioxide, and a group 18 element (typically, helium, neon, argon, xenon, krypton, etc.).

[0420] When the refractive index of the void 133 is lower than the refractive index of the sixth layer 114, the light emitted from the light-emitting device is reflected at the interface between the sixth layer 114 and the void 133. This prevents the light emitted from the light-emitting device from entering an adjacent pixel (or sub-pixel). This prevents light of different colors from mixing, thereby improving the display quality of the display device.

[0421] Then, by bonding substrate 120 onto protective layer 131 using resin layer 119, display device 100F shown in FIG. 25B can be fabricated.

[0422] As described above, in the manufacturing method of the display device of this embodiment, the island-shaped EL layer is not formed by a metal mask pattern but is formed by forming the EL layer on the entire surface and then processing it, so that the island-shaped EL layer can be formed with a uniform thickness. In addition, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to realize until now. Furthermore, it is possible to realize a high-definition display device or a display device with a high aperture ratio that has a built-in light-receiving device and a light detection function.

[0423] The first, second, and third layers that make up the light-emitting device for each color are formed in separate processes. This allows each EL layer to be fabricated with a configuration (material, film thickness, etc.) that is suitable for the light-emitting device for that color. This allows for the fabrication of light-emitting devices with excellent characteristics.

[0424] [Display device configuration example 2] An example different from the display device 100F shown in FIGS. 25A and 25B is shown in FIGS. 30A and 30B.

[0425] 30A includes a display section in which a plurality of pixels 110A are arranged in a matrix, and a connection section 140 located outside the display section. Each pixel 110A is composed of six subpixels: subpixel 110a, subpixel 110b, subpixel 110c, subpixel 110d, subpixel 110e, and subpixel 110f.

[0426] 30A shows an example in which subpixels are provided across two rows and three columns for one pixel 110A. The pixel 110A has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and three subpixels (subpixels 110d, 110e, and 110f) in the bottom row (second row). In other words, the pixel 110A has two subpixels (subpixels 110a and 110f) in the left column (first column), two subpixels (subpixels 110b and 110d) in the center column (second column), and two subpixels (subpixels 110c and 110e) in the right column (third column).

[0427] In this embodiment, the subpixels 110a, 110b, 110c, and 110f each have a light-emitting device that emits light in a different wavelength range, and the subpixels 110d and 110e each have a light-receiving device that is sensitive to a different wavelength range. For example, the subpixels 110a, 110b, 110c, 110d, 110e, and 110f correspond to the subpixels G, B, R, IR, PS, and IRS shown in FIG. 21A etc.

[0428] FIG. 30B shows cross-sectional views taken along dashed lines X1-X2, X5-X6, and Y1-Y2 in FIG. 30A.

[0429] 30B, display device 100G includes light-emitting device 130a, light-emitting device 130b, light-emitting device 130c, light-emitting device 130f, light-receiving device 150d, and light-receiving device 150e on transistor-containing layer 101, and includes protective layer 131 that covers the light-emitting devices and light-receiving devices. Substrate 120 is bonded to protective layer 131 with resin layer 119.

[0430] The light emitting devices 130a, 130b, 130c, and 130f each emit light in a different wavelength range, and the light emitting device 130f preferably emits infrared (IR) light, for example.

[0431] Light-emitting device 130f has a pixel electrode 111f on the transistor-containing layer 101, a seventh layer 113f on the pixel electrode 111f, a sixth layer 114 on the seventh layer 113f, and a common electrode 115 on the sixth layer 114. In light-emitting device 130f, the seventh layer 113f and the sixth layer 114 can be collectively referred to as an EL layer.

[0432] The seventh layer 113f has a seventh hole injection layer 181f on the pixel electrode 111f, a seventh hole transport layer 182f on the seventh hole injection layer 181f, a fourth light-emitting layer 183f on the seventh hole transport layer 182f, and a seventh electron transport layer 184f on the fourth light-emitting layer 183f.

[0433] The light-emitting device 130a, the light-emitting device 130b, the light-emitting device 130c, the light-receiving device 150d, and the light-receiving device 150e can be referred to in the above description, and therefore detailed description thereof will be omitted.

[0434] The method for manufacturing the display device 100G can be referred to in the description of the method for manufacturing the display device 100F, and therefore detailed description thereof will be omitted. The light-emitting device 130f can be formed in the same manner as the light-emitting devices 130a to 130c. Note that the order in which the light-emitting devices 130a, 130b, 130c, 130f, the light-receiving device 150d, and the light-receiving device 150e are formed is not particularly limited.

[0435] This embodiment mode can be combined with other embodiment modes as appropriate.

[0436] (Fourth embodiment) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0437] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0438] In this specification, a display device to which a connector such as a flexible printed circuit (FPC) or a TCP (Tape Carrier Package) is attached, or a display device to which an integrated circuit (IC) is mounted using a COG (Chip On Glass) method or a COF (Chip On Film) method, etc., may be referred to as a display panel module, display module, or simply a display panel.

[0439] [Display device 100H] FIG. 31 shows a perspective view of the display device 100H, and FIG. 32A shows a cross-sectional view of the display device 100H.

[0440] The display device 100H has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 31, the substrate 152 is clearly indicated by a dashed line.

[0441] The display device 100H has a display unit 162, a circuit 164, wiring 165, etc. Fig. 31 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100H. Therefore, the configuration shown in Fig. 31 can also be said to be a display module having the display device 100H, an integrated circuit (IC), and an FPC.

[0442] The circuit 164 can be, for example, a scanning line driver circuit.

[0443] The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0444] 31 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method or a COF (Chip on Film) method. The IC 173 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100H and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0445] FIG. 32A shows an example of a cross section of the display device 100H, showing a part of the region including the FPC 172, a part of the circuit 164, a part of the display unit 162, and a part of the region including the end portion.

[0446] The display device 100H shown in FIG. 32A includes a transistor 201, a transistor 205a, a transistor 205e, a light-emitting device 130a, a light-receiving device 150e, and the like between a substrate 151 and a substrate 152. The light-emitting device 130a emits, for example, red, green, or blue light. Alternatively, the light-emitting device 130a may emit infrared light. The light-receiving device 150e detects, for example, infrared light. Alternatively, the light-receiving device 150e may detect visible light, or may detect both visible light and infrared light.

[0447] Here, when a pixel of a display device has three types of subpixels having light-emitting devices that emit different colors, the three subpixels include subpixels of three colors of R, G, and B, or subpixels of three colors of yellow (Y), cyan (C), and magenta (M), etc. When a pixel of a display device has four subpixels, the four subpixels include subpixels of four colors of R, G, B, and white (W), or subpixels of four colors of R, G, B, and Y, etc.

[0448] The protective layer 131 and the substrate 152 are bonded via an adhesive layer 142. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device. In FIG. 32A, the space between the substrates 152 and 151 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0449] The light-emitting device 130a has a layered structure similar to that of the light-emitting device 130a shown in Fig. 25B, and the light-receiving device 150e has a layered structure similar to that of the light-receiving device 150e shown in Fig. 25B. For details of the light-emitting device and the light-receiving device, refer to embodiment 3. Furthermore, the end of the light-emitting device 130a and the end of the light-receiving device 150e are each covered with a protective layer 131.

[0450] The pixel electrodes 111a and 111e are connected to the conductive layers 222b of the transistors 205a and 205e through openings provided in the insulating layer 214, respectively.

[0451] The edges of the pixel electrodes are covered with an insulating layer 121. The pixel electrodes contain a material that reflects visible light, and the common electrode contains a material that transmits visible light.

[0452] Light emitted by the light-emitting device is emitted toward the substrate 152. The light-receiving device detects light incident from the substrate 152. Therefore, it is preferable to use a material for the substrate 152 that has high transparency to visible light and infrared light.

[0453] The stacked structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor in Embodiment 3.

[0454] The transistor 201, the transistor 205a, and the transistor 205e are all formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0455] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0456] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0457] The insulating layer 211, the insulating layer 213, and the insulating layer 215 are preferably formed using an inorganic insulating film. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0458] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 100H. This can prevent impurities from entering from the edge of the display device 100H through the organic insulating film. Alternatively, the organic insulating film may be formed so that the edge of the organic insulating film is located inside the edge of the display device 100H, so that the organic insulating film is not exposed at the edge of the display device 100H.

[0459] An organic insulating film is suitable for the insulating layer 214, which functions as a planarizing layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0460] 32A, an opening is formed in insulating layer 214. This makes it possible to prevent impurities from entering display unit 162 from the outside through insulating layer 214, even when an organic insulating film is used for insulating layer 214. This makes it possible to improve the reliability of display device 100H.

[0461] The transistor 201, the transistor 205a, and the transistor 205e each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0462] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0463] The transistor 201, the transistor 205a, and the transistor 205e each have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0464] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0465] The semiconductor layer of the transistor preferably contains metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably uses a transistor using metal oxide in a channel formation region (hereinafter referred to as an OS transistor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single-crystal silicon).

[0466] The semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0467] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer.

[0468] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include compositions in which In:M:Zn=1:1:1 or thereabouts, In:M:Zn=1:1:1.2 or thereabouts, In:M:Zn=2:1:3 or thereabouts, In:M:Zn=3:1:2 or thereabouts, In:M:Zn=4:2:3 or thereabouts, In:M:Zn=4:2:4.1 or thereabouts, In:M:Zn=5:1:3 or thereabouts, In:M:Zn=5:1:6 or thereabouts, In:M:Zn=5:1:7 or thereabouts, In:M:Zn=5:1:8 or thereabouts, In:M:Zn=6:1:6 or thereabouts, and In:M:Zn=5:2:5 or thereabouts, etc. Note that "nearby compositions" includes a range of ±30% of the desired atomic ratio.

[0469] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 to 3 and the atomic ratio of Zn is 2 to 4. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and less than 2 and the atomic ratio of Zn is greater than 5 and less than 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and less than 2 and the atomic ratio of Zn is greater than 0.1 and less than 2.

[0470] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display portion 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types of structures. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types of structures.

[0471] 32B and 32C show other examples of transistor configurations.

[0472] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. An insulating layer 218 covering the transistor may also be provided.

[0473] 32B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0474] 32C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the structure shown in FIG. 32C can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 32C, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through openings in the insulating layer 215.

[0475] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. In this example, the conductive layer 166 is a conductive film obtained by processing the same conductive film as the pixel electrode. The conductive layer 166 is exposed on the upper surface of the connection portion 204. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0476] It is preferable to provide a light-shielding layer 148 on the surface of substrate 152 facing substrate 151. In addition, various optical members can be arranged on the outside of substrate 152. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. In addition, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, an impact absorbing layer, etc. may be arranged on the outside of substrate 152.

[0477] By providing the protective layer 131 that covers the light emitting device, it is possible to prevent impurities such as water from entering the light emitting device, thereby improving the reliability of the light emitting device.

[0478] In a region 228 near the edge of the display device 100H, it is preferable that the insulating layer 215 and the protective layer 131 contact each other through the opening in the insulating layer 214. In particular, it is preferable that the inorganic insulating films contact each other. This makes it possible to prevent impurities from entering the display unit 162 from the outside through the organic insulating film. This can therefore improve the reliability of the display device 100H.

[0479] The substrate 151 and the substrate 152 can each be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting device is extracted. Using a flexible material for the substrate 151 and the substrate 152 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used for the substrate 151 or the substrate 152.

[0480] Substrate 151 and substrate 152 can each be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 151 and 152 may be made of glass having a thickness sufficient to provide flexibility.

[0481] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0482] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0483] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also called cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0484] When a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0485] The adhesive layer can be made of various curable adhesives, such as photocurable adhesives (e.g., ultraviolet curable), reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets, etc., may also be used.

[0486] The connection layer 242 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0487] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0488] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) in light-emitting devices.

[0489] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0490] This embodiment mode can be combined with other embodiment modes as appropriate.

[0491] (Embodiment 5) In this embodiment, a light-emitting device that can be used for a display device of one embodiment of the present invention will be described.

[0492] The light-emitting device shown in Fig. 33A has an electrode 772, an EL layer 786, and an electrode 788. One of the electrodes 772 and 788 functions as an anode, and the other functions as a cathode. One of the electrodes 772 and 788 functions as a pixel electrode, and the other functions as a common electrode. Of the electrodes 772 and 788, the electrode from which light is extracted is preferably transparent to visible light, and the other electrode preferably reflects visible light.

[0493] 33A, the EL layer 786 of the light-emitting device can be composed of multiple layers such as a layer 4420, a light-emitting layer 4411, and a layer 4430. The layer 4420 can have, for example, a layer containing a substance with high electron injection properties (electron injection layer) and a layer containing a substance with high electron transport properties (electron transport layer). The light-emitting layer 4411 contains, for example, a light-emitting compound. The layer 4430 can have, for example, a layer containing a substance with high hole injection properties (hole injection layer) and a layer containing a substance with high hole transport properties (hole transport layer).

[0494] A structure including the layer 4420, the light-emitting layer 4411, and the layer 4430 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 33A is referred to as a single structure in this specification.

[0495] Fig. 33B shows a modification of EL layer 786 included in the light-emitting device shown in Fig. 33A. Specifically, the light-emitting device shown in Fig. 33B includes a layer 4430-1 on electrode 772, a layer 4430-2 on layer 4430-1, a light-emitting layer 4411 on layer 4430-2, a layer 4420-1 on light-emitting layer 4411, a layer 4420-2 on layer 4420-1, and an electrode 788 on layer 4420-2. For example, when electrode 772 is an anode and electrode 788 is a cathode, layer 4430-1 functions as a hole injection layer, layer 4430-2 functions as a hole transport layer, layer 4420-1 functions as an electron transport layer, and layer 4420-2 functions as an electron injection layer. Alternatively, when the electrode 772 is used as a cathode and the electrode 788 is used as an anode, the layer 4430-1 functions as an electron injection layer, the layer 4430-2 functions as an electron transport layer, the layer 4420-1 functions as a hole transport layer, and the layer 4420-2 functions as a hole injection layer. With such a layer structure, it is possible to efficiently inject carriers into the light-emitting layer 4411 and increase the efficiency of carrier recombination in the light-emitting layer 4411.

[0496] Note that a configuration in which a plurality of light-emitting layers (light-emitting layer 4411, light-emitting layer 4412, and light-emitting layer 4413) are provided between layer 4420 and layer 4430 as shown in FIG. 33C is also a variation of the single structure.

[0497] As shown in FIG. 33D, a configuration in which multiple light-emitting units (EL layer 786a and EL layer 786b) are connected in series via an intermediate layer 4440 (also referred to as a charge generation layer) is referred to as a tandem structure in this specification. This is not limiting, and the tandem structure may also be referred to as a stack structure, for example. The tandem structure can provide a light-emitting device capable of emitting light with high brightness.

[0498] 33C and 33D, as shown in FIG. 33B, layer 4420 and layer 4430 can each have a laminated structure made up of two or more layers.

[0499] The light-emitting device can emit light of red, green, blue, cyan, magenta, yellow, or white, depending on the material of the EL layer 786. The color purity can be further improved by providing the light-emitting device with a microcavity structure.

[0500] A light-emitting device that emits white light preferably has a structure containing two or more types of light-emitting materials in the light-emitting layer. When using a structure containing two light-emitting materials, it is sufficient to select light-emitting materials whose respective emissions have a complementary color relationship. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a light-emitting device that emits white light as a whole can be obtained. When using a structure containing three or more light-emitting materials, a structure that emits white light can be obtained by mixing the emission colors of each material. The same applies to light-emitting devices having two or more light-emitting layers. For example, a single-structure white light-emitting device can be realized by mixing the emission colors of the light-emitting layers 4411, 4412, and 4413 shown in Figure 33C.

[0501] The light-emitting layer preferably contains two or more light-emitting materials that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Alternatively, it is preferable that the light-emitting layer contains two or more light-emitting materials, and the light emitted by each of the light-emitting materials contains spectral components of two or more colors of R, G, and B.

[0502] [Modification of display device] An example of the configuration of a light-emitting device will be described with reference to FIGS.

[0503] 34A shows a schematic cross-sectional view of display device 500. Display device 500 has light-emitting device 550R that emits red light, light-emitting device 550G that emits green light, and light-emitting device 550B that emits blue light. Note that in this embodiment, description of the light-receiving devices included in the display device will be omitted.

[0504] The light-emitting device 550R has a configuration in which two light-emitting units (light-emitting unit 512R_1 and light-emitting unit 512R_2) are stacked between a pair of electrodes (electrode 501 and electrode 502) via an intermediate layer 531. Similarly, the light-emitting device 550G has light-emitting units 512G_1 and 512G_2, and the light-emitting device 550B has light-emitting units 512B_1 and 512B_2.

[0505] An electrode 501 functions as a pixel electrode and is provided for each light-emitting device, and an electrode 502 functions as a common electrode and is provided in common to a plurality of light-emitting devices.

[0506] The light-emitting unit 512R_1 includes a layer 521, a layer 522, a light-emitting layer 523R, a layer 524, etc. The light-emitting unit 512R_2 includes a layer 522, a light-emitting layer 523R, a layer 524, etc. The light-emitting device 550R includes a layer 525 between the light-emitting unit 512R_2 and the electrode 502. The layer 525 can also be considered as part of the light-emitting unit 512R_2.

[0507] The layer 521 includes, for example, a layer containing a substance with a high hole-injecting property (hole-injecting layer). The layer 522 includes, for example, a layer containing a substance with a high hole-transporting property (hole-transporting layer). The layer 524 includes, for example, a layer containing a substance with a high electron-transporting property (electron-transporting layer). The layer 525 includes, for example, a layer containing a substance with a high electron-injecting property (electron-injecting layer).

[0508] Alternatively, a structure in which the layer 521 has an electron-injecting layer, the layer 522 has an electron-transporting layer, the layer 524 has a hole-transporting layer, and the layer 525 has a hole-injecting layer may be used.

[0509] The layer 522, the light-emitting layer 523R, and the layer 524 may have the same configuration (material, film thickness, etc.) between the light-emitting unit 512R_1 and the light-emitting unit 512R_2, or may have different configurations.

[0510] 34A, the layer 521 and the layer 522 are shown separately, but this is not limiting. For example, when the layer 521 has a function as both a hole injection layer and a hole transport layer, or when the layer 521 has a function as both an electron injection layer and an electron transport layer, the layer 522 may be omitted.

[0511] The intermediate layer 531 has a function of injecting electrons into one of the light-emitting unit 512R_1 and the light-emitting unit 512R_2 and injecting holes into the other when a voltage is applied between the electrode 501 and the electrode 502. The intermediate layer 531 can also be called a charge generation layer.

[0512] The intermediate layer 531 can be preferably made of a material applicable to an electron injection layer, such as lithium fluoride. The intermediate layer can also be preferably made of a material applicable to a hole injection layer. The intermediate layer can also be made of a layer containing a hole transport material and an acceptor material (electron acceptor material). The intermediate layer can also be made of a layer containing an electron transport material and a donor material. By forming an intermediate layer having such a layer, it is possible to suppress an increase in driving voltage when light-emitting units are stacked.

[0513] Light-emitting layer 523R of light-emitting device 550R contains a light-emitting material that emits red light, light-emitting layer 523G of light-emitting device 550G contains a light-emitting material that emits green light, and light-emitting layer 523B of light-emitting device 550B contains a light-emitting material that emits blue light. Light-emitting device 550G and light-emitting device 550B have a configuration in which light-emitting layer 523R of light-emitting device 550R is replaced with light-emitting layer 523G and light-emitting layer 523B, respectively, and are otherwise similar in configuration to light-emitting device 550R.

[0514] The layers 521, 522, 524, and 525 may have the same configuration (material, film thickness, etc.) for each color light-emitting device, or may have different configurations.

[0515] A configuration in which multiple light-emitting units are connected in series via an intermediate layer 531, such as light-emitting device 550R, light-emitting device 550G, and light-emitting device 550B, is referred to herein as a tandem structure. On the other hand, a configuration having one light-emitting unit between a pair of electrodes is referred to as a single structure. Although the term "tandem structure" is used herein, the term is not limited thereto; for example, the tandem structure may be referred to as a stack structure. The tandem structure can provide a light-emitting device capable of emitting light with high brightness. Furthermore, the tandem structure can reduce the current required to achieve the same brightness compared to a single structure, thereby improving reliability.

[0516] A structure in which a separate light-emitting layer is formed for each light-emitting device, such as light-emitting device 550R, light-emitting device 550G, and light-emitting device 550B, is sometimes called an SBS (Side By Side) structure. The SBS structure allows the materials and configuration to be optimized for each light-emitting device, increasing the freedom in material and configuration selection and facilitating improvements in brightness and reliability.

[0517] The display device 500 can be said to have both a tandem structure and an SBS structure. Therefore, it can combine the advantages of both a tandem structure and an SBS structure. As shown in FIG. 34A, the display device 500 has two light-emitting units formed in series, and therefore may be referred to as a two-tier tandem structure. In the two-tier tandem structure shown in FIG. 34A, a second light-emitting unit having a red light-emitting layer is stacked on a first light-emitting unit having a red light-emitting layer. Similarly, in the two-tier tandem structure shown in FIG. 34A, a second light-emitting unit having a green light-emitting layer is stacked on a first light-emitting unit having a green light-emitting layer, and a second light-emitting unit having a blue light-emitting layer is stacked on a first light-emitting unit having a blue light-emitting layer.

[0518] 34A, the light-emitting unit 512R_1, the intermediate layer 531, the light-emitting unit 512R_2, and the layer 525 can be formed as island-shaped layers. The light-emitting unit 512G_1, the intermediate layer 531, the light-emitting unit 512G_2, and the layer 525 can be formed as island-shaped layers. The light-emitting unit 512B_1, the intermediate layer 531, the light-emitting unit 512B_2, and the layer 525 can be formed as island-shaped layers. That is, the layer 113 shown in FIG. 34A corresponds to the first layer 113a, the second layer 113b, or the third layer 113c shown in FIG. 25B, etc.

[0519] Fig. 34B is a modified example of the display device 500 shown in Fig. 34A. The display device 500 shown in Fig. 34B is an example in which the layer 525 is provided in common among the light-emitting devices, similar to the electrode 502. In this case, the layer 525 can be called a common layer. By providing one or more common layers among the plurality of light-emitting devices in this way, the manufacturing process can be simplified, and therefore the manufacturing cost can be reduced.

[0520] In FIG. 34A, the light-emitting unit 512R_1, the intermediate layer 531, and the light-emitting unit 512R_2 can be formed as island-shaped layers. The light-emitting unit 512G_1, the intermediate layer 531, and the light-emitting unit 512G_2 can be formed as island-shaped layers. The light-emitting unit 512B_1, the intermediate layer 531, and the light-emitting unit 512B_2 can be formed as island-shaped layers. That is, the layer 113 shown in FIG. 34B corresponds to the first layer 113a, the second layer 113b, or the third layer 113c shown in FIG. 25B and the like. The layer 525 corresponds to the sixth layer 114 shown in FIG. 25B and the like. Note that in FIGS. 35 to 37, the layer corresponding to the first layer 113a, the second layer 113b, or the third layer 113c shown in FIG. 25B and the like is also referred to as the layer 113.

[0521] The display device 500 shown in FIG. 35A is an example in which three light-emitting units are stacked. In FIG. 35A, the light-emitting device 550R has a light-emitting unit 512R_3 stacked on a light-emitting unit 512R_2 with an intermediate layer 531 interposed therebetween. The light-emitting unit 512R_3 has a layer 522, a light-emitting layer 523R, a layer 524, and the like. The light-emitting unit 512R_3 can have a similar configuration to the light-emitting unit 512R_2. The same applies to the light-emitting unit 512G_3 included in the light-emitting device 550G and the light-emitting unit 512B_3 included in the light-emitting device 550B.

[0522] FIG. 35B shows an example in which n light-emitting units (n is an integer of 2 or more) are stacked.

[0523] In this way, by increasing the number of stacked light-emitting units, the luminance obtained from the light-emitting device with the same amount of current can be increased in proportion to the number of stacked light-emitting units.Furthermore, by increasing the number of stacked light-emitting units, the current required to obtain the same luminance can be reduced, and therefore the power consumption of the light-emitting device can be reduced in proportion to the number of stacked light-emitting units.

[0524] The display device 500 shown in FIG. 36A illustrates an example in which two adjacent light-emitting devices are spaced apart, and electrodes 502 are provided along the side surfaces of the light-emitting units and intermediate layer 531.

[0525] Here, if the intermediate layer 531 and the electrode 502 come into contact with each other, an electrical short circuit may occur. Therefore, it is preferable to insulate the intermediate layer 531 from the electrode 502.

[0526] 36A shows an example in which an insulating layer 541 is provided to cover the side surfaces of the electrode 501, each light-emitting unit, and the intermediate layer 531. The insulating layer 541 can be called a side wall, a side wall protective layer, a side wall insulating film, or the like. By providing the insulating layer 541, the intermediate layer 531 and the electrode 502 can be electrically insulated from each other.

[0527] The side surfaces of the light-emitting units and the intermediate layer 531 are preferably perpendicular or approximately perpendicular to the surface on which they are formed. For example, the angle between the surface on which they are formed and these side surfaces is preferably 60 degrees or more and 90 degrees or less.

[0528] 36B shows an example in which layer 525 and electrode 502 are provided along the side surfaces of light-emitting unit 525 and intermediate layer 531. Furthermore, a two-layer structure of insulating layer 541 and insulating layer 542 is provided as a sidewall protective layer.

[0529] FIG. 37A is a modified example of FIG. 36B. FIG. 37B is an enlarged view of region 503 shown in FIG. 37A. The shapes of the end portions of insulating layer 542 differ between FIG. 37A and FIG. 36B. Furthermore, because the shapes of the end portions of insulating layer 542 are different and layer 525 and electrode 502 are formed along the shape of insulating layer 542, the shapes of layer 525 and electrode 502 are also different. FIG. 37A also differs from FIG. 36B in that the thickness of insulating layer 542 is thicker than that of insulating layer 541. The shape of the end portion of insulating layer 542 can be rounded as shown in FIG. 37B. For example, when forming insulating layer 542, if dry etching is used and the upper portion of insulating layer 542 is etched by anisotropic etching, the end portion of insulating layer 542 becomes rounded as shown in FIG. 37B. By rounding the end portion of insulating layer 542, the coverage of layer 525 and electrode 502 is improved, which is preferable. As shown in FIGS. 37A and 37B, by making the thickness of insulating layer 542 thicker than the thickness of insulating layer 541, it may be easier to make the end shape round.

[0530] The insulating layer 541 (and insulating layer 542) functioning as a sidewall protective layer can prevent an electrical short circuit between the electrode 502 and the intermediate layer 531. Furthermore, the insulating layer 541 (and insulating layer 542) covering the side surface of the electrode 501 can prevent an electrical short circuit between the electrode 501 and the electrode 502. This can prevent an electrical short circuit at the four corners of the light-emitting device.

[0531] An inorganic insulating film is preferably used for each of the insulating layers 541 and 542. For example, an oxide or nitride such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, or hafnium oxide can be used. Alternatively, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, or the like may be used.

[0532] The insulating layers 541 and 542 can be formed by various film formation methods, such as sputtering, vapor deposition, CVD, and ALD. In particular, the ALD method causes less film formation damage to the layer on which it is formed, so it is preferable to form the insulating layer 541, which is formed directly on the light-emitting unit and the intermediate layer 531, by the ALD method. In this case, it is also preferable to form the insulating layer 542 by sputtering, as this can increase productivity.

[0533] For example, the insulating layer 541 can be an aluminum oxide film formed by an ALD method, and the insulating layer 542 can be a silicon nitride film formed by a sputtering method.

[0534] One or both of the insulating layers 541 and 542 preferably function as a barrier insulating film against at least one of water and oxygen. Alternatively, one or both of the insulating layers 541 and 542 preferably have a function of suppressing diffusion of at least one of water and oxygen. Alternatively, one or both of the insulating layers 541 and 542 preferably have a function of capturing or fixing (also referred to as gettering) at least one of water and oxygen.

[0535] In this specification and the like, a barrier insulating film refers to an insulating film having barrier properties. In addition, in this specification and the like, the barrier properties refer to a function of suppressing the diffusion of a corresponding substance (also referred to as low permeability), or a function of capturing or fixing (also referred to as gettering) a corresponding substance.

[0536] When one or both of the insulating layers 541 and 542 have the above-described barrier insulating film function or gettering function, the structure can suppress the intrusion of impurities (typically, water or oxygen) that can diffuse into each light-emitting device from the outside. With this structure, a display device with excellent reliability can be provided.

[0537] 37C, the insulating layer 541 and the insulating layer 542 functioning as the sidewall protective layer may not be provided. In FIG. 37C, the layer 525 is provided in contact with the side surfaces of the light-emitting units and the intermediate layer 531.

[0538] 34A , the light-emitting layer 523R of the light-emitting unit 512R_1 may include a phosphorescent material, the light-emitting layer 523R of the light-emitting unit 512R_2 may include a phosphorescent material, the light-emitting layer 523G of the light-emitting unit 512G_1 may include a fluorescent material, the light-emitting layer 523G of the light-emitting unit 512G_2 may include a fluorescent material, the light-emitting layer 523B of the light-emitting unit 512B_1 may include a fluorescent material, and the light-emitting layer 523B of the light-emitting unit 512B_2 may include a fluorescent material.

[0539] Alternatively, in the display device 500 shown in FIG. 34A, the light-emitting layer 523R of the light-emitting unit 512R_1 can have a phosphorescent material, the light-emitting layer 523R of the light-emitting unit 512R_2 can have a phosphorescent material, the light-emitting layer 523G of the light-emitting unit 512G_1 can have a phosphorescent material, the light-emitting layer 523G of the light-emitting unit 512G_2 can have a phosphorescent material, the light-emitting layer 523B of the light-emitting unit 512B_1 can have a fluorescent material, and the light-emitting layer 523B of the light-emitting unit 512B_2 can have a fluorescent material.

[0540] Note that the display device of one embodiment of the present invention may have a structure in which all light-emitting layers are formed using a fluorescent material or a structure in which all light-emitting layers are formed using a phosphorescent material.

[0541] 34A , the light-emitting layer 523R of the light-emitting unit 512R_1 may be made of a phosphorescent material and the light-emitting layer 523R of the light-emitting unit 512R_2 may be made of a fluorescent material, or the light-emitting layer 523R of the light-emitting unit 512R_1 may be made of a fluorescent material and the light-emitting layer 523R of the light-emitting unit 512R_2 may be made of a phosphorescent material, that is, the light-emitting layers of the first and second stages may be made of different materials. Note that, although the description here has been made explicitly about the light-emitting units 512R_1 and 512R_2, the same configuration can also be applied to the light-emitting units 512G_1 and 512G_2, and the light-emitting units 512B_1 and 512B_2.

[0542] This embodiment mode can be combined with other embodiment modes as appropriate.

[0543] (Embodiment 6) In this embodiment, a metal oxide (also referred to as an oxide semiconductor) that can be used for the OS transistor described in the above embodiment will be described.

[0544] The metal oxide preferably contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. It is also preferable that it contains aluminum, gallium, yttrium, tin, or the like in addition to these. It may also contain one or more elements selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, and the like.

[0545] The metal oxide can be formed by a sputtering method, a chemical vapor deposition (CVD) method such as a metal organic chemical vapor deposition (MOCVD) method, or an atomic layer deposition (ALD) method.

[0546] <Classification of crystal structures> Examples of the crystalline structure of oxide semiconductors include amorphous (including completely amorphous), c-axis-aligned crystalline (CAAC), nanocrystalline (nc), cloud-aligned composite (CAC), single crystal, and polycrystal.

[0547] The crystalline structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectra. For example, it can be evaluated using XRD spectra obtained by GIXD (Grazing-Incidence XRD) measurements. The GIXD method is also called the thin film method or the Seemann-Bohlin method.

[0548] For example, for a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, for an IGZO film with a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical peak shape of the XRD spectrum clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0549] The crystalline structure of a film or substrate can be evaluated by the diffraction pattern (also called the nanobeam electron diffraction pattern) observed using nanobeam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. Furthermore, a spot-like pattern is observed in the diffraction pattern of an IGZO film deposited at room temperature, rather than a halo. For this reason, it is estimated that an IGZO film deposited at room temperature is in an intermediate state that is neither crystalline nor amorphous, and therefore it cannot be concluded that it is in an amorphous state.

[0550] <<Structure of oxide semiconductor>> Note that oxide semiconductors may be classified differently depending on their structure. For example, oxide semiconductors are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above-mentioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OSs), amorphous oxide semiconductors, and the like.

[0551] Here, the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described in detail.

[0552] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, each with its c-axis aligned in a specific direction. The specific direction can be the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. If the atomic arrangement is considered as a lattice arrangement, a crystalline region can also be a region with a uniform lattice arrangement. Furthermore, CAAC-OS has a region where multiple crystalline regions are connected in the ab-plane direction, and the region may have distortion. Note that distortion refers to a location where the lattice arrangement changes between a region with a uniform lattice arrangement and a region with a different uniform lattice arrangement in the region where multiple crystalline regions are connected. In other words, CAAC-OS is an oxide semiconductor with a c-axis aligned but no clear orientation in the ab-plane direction.

[0553] Each of the multiple crystalline regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of one minute crystal, the maximum diameter of the crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of the crystalline region may be several tens of nm.

[0554] In an In-M-Zn oxide (wherein element M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), the CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter referred to as an In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as an (M, Zn) layer) are stacked. Note that indium and element M are mutually substituted. Therefore, the (M, Zn) layer may contain indium. Furthermore, the In layer may contain element M. Furthermore, the In layer may contain Zn. The layered structure is observed as a lattice image in, for example, a high-resolution transmission electron microscope (TEM) image.

[0555] When the CAAC-OS film is subjected to structural analysis using, for example, an XRD apparatus, a peak indicating c-axis orientation is detected at or near 2θ=31° in out-of-plane XRD measurement using θ / 2θ scan. Note that the position of the peak indicating c-axis orientation (2θ value) may vary depending on the type and composition of the metallic elements constituting the CAAC-OS.

[0556] For example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots are observed, and the spots are observed at positions that are point-symmetric with respect to the spot of the incident electron beam that has passed through the sample (also called the direct spot).

[0557] When the crystalline region is observed from the specific direction, the lattice arrangement within the crystalline region is basically a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. Furthermore, the distortion may have a pentagonal, heptagonal, or other lattice arrangement. In the CAAC-OS, no clear grain boundaries are observed even near the distortion. This indicates that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is thought to be because the CAAC-OS can tolerate distortion due to the lack of close-packed oxygen atom arrangement in the ab-plane direction and the change in interatomic bond distance caused by metal atom substitution.

[0558] A crystal structure with clear grain boundaries is called polycrystalline. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in the on-state current and field-effect mobility of a transistor. Therefore, CAAC-OS, which lacks clear grain boundaries, is one of the crystalline oxides with a crystal structure suitable for use in the semiconductor layer of a transistor. Zn is preferred for use in CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the generation of grain boundaries more effectively than In oxide.

[0559] CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to a decrease in electron mobility due to crystal grain boundaries. Furthermore, since the crystallinity of an oxide semiconductor can be reduced by impurities or defects, the CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, oxide semiconductors with CAAC-OS have stable physical properties. Therefore, oxide semiconductors with CAAC-OS are heat-resistant and highly reliable. Furthermore, the CAAC-OS is stable even under high temperatures (so-called thermal budgets) during the manufacturing process. Therefore, using a CAAC-OS for an OS transistor can increase the flexibility of the manufacturing process.

[0560] [nc-OS] The nc-OS has periodic atomic arrangement in a microscopic region (e.g., a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). In other words, the nc-OS has microcrystalline structures. The size of the microcrystalline structures is, for example, 1 nm to 10 nm, particularly 1 nm to 3 nm, and therefore these microcrystalline structures are also called nanocrystalline structures. Furthermore, the nc-OS exhibits no regularity in the crystal orientation between different nanocrystalline structures. Therefore, the entire film lacks orientation. Therefore, depending on the analytical method, the nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor. For example, when a structural analysis of an nc-OS film is performed using an XRD apparatus, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Furthermore, when an nc-OS film is subjected to electron diffraction (also known as selected-area electron diffraction) using an electron beam with a probe diameter larger than that of nanocrystalline structures (e.g., 50 nm or larger), a halo-like diffraction pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystals (for example, 1 nm to 30 nm), an electron diffraction pattern can be obtained in which multiple spots are observed within a ring-shaped region centered on the direct spot.

[0561] [a-like OS] The a-like OS is an oxide semiconductor having a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has a pore or low-density region. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. Furthermore, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0562] <<Oxide semiconductor structure>> Next, the above-mentioned CAC-OS will be described in detail, which relates to the material composition.

[0563] [CAC-OS] CAC-OS is a material structure in which elements constituting a metal oxide are unevenly distributed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or a similar size range. Hereinafter, a metal oxide in which one or more metal elements are unevenly distributed and the regions containing the metal elements are mixed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or a similar size range, is also referred to as a mosaic or patch state.

[0564] Furthermore, CAC-OS has a mosaic structure in which the material is separated into first and second regions, and the first regions are distributed throughout the film (hereinafter also referred to as a cloud structure). That is, CAC-OS is a composite metal oxide having a structure in which the first and second regions are mixed.

[0565] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. The second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. The second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0566] Specifically, the first region is a region whose main component is indium oxide, indium zinc oxide, or the like. The second region is a region whose main component is gallium oxide, gallium zinc oxide, or the like. In other words, the first region can be rephrased as a region whose main component is In. The second region can be rephrased as a region whose main component is Ga.

[0567] It should be noted that there are cases where a clear boundary between the first region and the second region cannot be observed.

[0568] CAC-OS in In-Ga-Zn oxide refers to a material structure containing In, Ga, Zn, and O, with some regions primarily composed of Ga and other regions primarily composed of In randomly arranged mosaics. Therefore, it is presumed that CAC-OS has a structure in which metal elements are distributed nonuniformly.

[0569] The CAC-OS can be formed, for example, by a sputtering method without heating the substrate. When the CAC-OS is formed by a sputtering method, one or more of an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. The lower the flow rate ratio of oxygen gas to the total flow rate of deposition gas during deposition, the better. For example, the flow rate ratio of oxygen gas to the total flow rate of deposition gas during deposition is preferably 0% or more and less than 30%, and more preferably 0% or more and 10% or less.

[0570] For example, in the case of CAC-OS in In-Ga-Zn oxide, EDX mapping obtained using EDX (Energy Dispersive X-ray spectroscopy) confirms that the CAC-OS has a structure in which a region mainly composed of In (first region) and a region mainly composed of Ga (second region) are unevenly distributed and mixed.

[0571] Here, the first region has higher conductivity than the second region. That is, the flow of carriers through the first region causes the metal oxide to exhibit conductivity. Therefore, the first region is distributed in a cloud-like manner in the metal oxide, thereby achieving a high field-effect mobility (μ).

[0572] On the other hand, the second region has higher insulating properties than the first region. That is, the second region is distributed in the metal oxide, thereby suppressing leakage current.

[0573] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulating property due to the second region act complementarily, thereby providing the CAC-OS with a switching function (the ability to turn on / off). In other words, CAC-OS has a conductive function in part of the material and an insulating function in part of the material, and the material as a whole functions as a semiconductor. By separating the conductive function from the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching behavior can be achieved.

[0574] Transistors using CAC-OS have high reliability and are therefore ideal for various semiconductor devices such as display devices.

[0575] Oxide semiconductors have a variety of structures, each with different characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS.

[0576] <Transistors containing oxide semiconductors> Next, a case where the oxide semiconductor is used in a transistor will be described.

[0577] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility and high reliability can be realized.

[0578] For the transistor, an oxide semiconductor with a low carrier concentration is preferably used. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 Less than 1 × 10 15 cm -3 or less, more preferably 1 × 10 13 cm -3Less than or equal to 1×10 11 cm -3 or less, more preferably 1 × 10 10 cm -3 Less than 1 x 10 -9 cm -3 That is all. Note that in order to reduce the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced to reduce the density of defect states. In this specification and the like, a semiconductor having a low impurity concentration and a low density of defect states is referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. Note that an oxide semiconductor having a low carrier concentration may also be referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.

[0579] A highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states, and therefore, the density of trap states may also be low.

[0580] Charges trapped in the trap states of an oxide semiconductor take a long time to dissipate and may behave like fixed charges. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high density of trap states may have unstable electrical characteristics.

[0581] Therefore, in order to stabilize the electrical characteristics of a transistor, it is effective to reduce the impurity concentration in the oxide semiconductor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in the adjacent film. Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.

[0582] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0583] When an oxide semiconductor contains silicon or carbon, which is one of the Group 14 elements, defect levels are formed in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are calculated to be 2×10 18 atoms / cm 3 Less than or equal to 2 x 10 17 atoms / cm 3 The following applies.

[0584] When an oxide semiconductor contains an alkali metal or alkaline earth metal, defect levels may be formed and carriers may be generated. Therefore, a transistor using an oxide semiconductor containing an alkali metal or alkaline earth metal is likely to have normally-on characteristics. Therefore, when the concentration of the alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0585] When nitrogen is contained in an oxide semiconductor, electrons serving as carriers are generated, the carrier concentration increases, and the semiconductor is likely to become n-type. As a result, a transistor using an oxide semiconductor containing nitrogen as a semiconductor tends to have normally-on characteristics. Alternatively, when nitrogen is contained in an oxide semiconductor, trap states may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in the oxide semiconductor obtained by SIMS is set to 5×10 19 atoms / cm 3 Less than 5 x 10 18 atoms / cm 3 Less than or equal to 1×10 18 atoms / cm 3 Less than 5 × 10, more preferably 17 atoms / cm 3 Do the following:

[0586] Hydrogen contained in an oxide semiconductor reacts with oxygen bonded to a metal atom to form water, which may form an oxygen vacancy. When hydrogen enters the oxygen vacancy, electrons serving as carriers may be generated. Furthermore, some of the hydrogen may bond with oxygen bonded to a metal atom to generate electrons serving as carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. For this reason, it is preferable to reduce the amount of hydrogen in the oxide semiconductor as much as possible. Specifically, the hydrogen concentration in an oxide semiconductor measured by SIMS is 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 less than 5 × 10 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 Make it less than.

[0587] When an oxide semiconductor with sufficiently reduced impurities is used for a channel formation region of a transistor, stable electrical characteristics can be obtained.

[0588] This embodiment mode can be combined with other embodiment modes as appropriate.

[0589] (Embodiment 7) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0590] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0591] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0592] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices (head-mounted displays), AR glasses-type devices, and MR devices.

[0593] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for personal use such as portable or home use. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0594] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0595] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0596] Electronic device 6500 shown in FIG. 38A is a portable information terminal that can be used as a smartphone.

[0597] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0598] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0599] FIG. 38B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0600] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0601] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0602] In an area outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0603] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0604] 39A shows an example of a television device. A television device 7100 has a display unit 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0605] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0606] 39A can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, a touch sensor may be provided in the display unit 7000, and the television 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control 7111 may have a display unit that displays information output from the remote control 7111. The channel and volume can be controlled using the operation keys or touch panel provided on the remote control 7111, and the video displayed on the display unit 7000 can be controlled.

[0607] The television device 7100 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts. In addition, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0608] 39B shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display portion 7000 is incorporated in the housing 7211.

[0609] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0610] 39C and 39D show an example of digital signage.

[0611] 39C includes a housing 7301, a display unit 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0612] 39D shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0613] 39C and 39D, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0614] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0615] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, intuitive operation can improve usability.

[0616] 39C and 39D, digital signage 7300 or digital signage 7400 is preferably capable of wirelessly linking with information terminal 7311 or information terminal 7411, such as a smartphone carried by a user. For example, advertising information displayed on display unit 7000 can be displayed on the screen of information terminal 7311 or information terminal 7411. Furthermore, by operating information terminal 7311 or information terminal 7411, the display on display unit 7000 can be switched.

[0617] It is also possible to run a game on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0618] The electronic device shown in Figures 40A to 40F has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0619] 40A to 40F have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic device are not limited to these, and the electronic device may have various other functions. The electronic device may have multiple display units. Furthermore, the electronic device may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on the display unit, etc.

[0620] The electronic devices shown in FIGS. 40A to 40F will be described in detail below.

[0621] FIG. 40A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. The mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces thereof. FIG. 40A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and signal strength. Alternatively, an icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0622] 40B is a perspective view showing mobile information terminal 9102. Mobile information terminal 9102 has a function of displaying information on three or more sides of display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, while carrying mobile information terminal 9102 in a breast pocket of clothes, the user can check information 9053 displayed in a position that can be observed from above mobile information terminal 9102. The user can check the display without taking mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0623] FIG. 40C is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and reception with another information terminal and charge itself via a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0624] 40D to 40F are perspective views showing a foldable mobile information terminal 9201. FIG. 40D shows the mobile information terminal 9201 in an unfolded state, FIG. 40F shows it in a folded state, and FIG. 40E is a perspective view showing a state in the process of changing from one of FIG. 40D and FIG. 40F to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent viewability of the display. The display unit 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0625] The display device and the electronic device according to one embodiment of the present invention can be incorporated into the inner or outer wall of a house or a building, or the interior or exterior of a vehicle.

[0626] FIG. 41 shows an example in which a display device of one embodiment of the present invention is mounted on a vehicle. In the vehicle shown in FIG. 41, a display device 5000a, a display device 5000b, and a display device 5000c are mounted on a dashboard 5002. A display device 5000d is mounted on a ceiling 5004 on the driver's seat side. Note that FIG. 41 shows an example in which the display device 5000d is mounted on a right-hand drive vehicle, but this is not particularly limited, and the display device 5000d can also be mounted on a left-hand drive vehicle. In this case, the left and right positions of the configuration shown in FIG. 41 are reversed. FIG. 41 shows a steering wheel 5006, a windshield 5008, and the like that are arranged around the driver's seat and the passenger seat.

[0627] It is preferable that one or more of the display devices 5000a to 5000d have a near-touch sensor function. The near-touch sensor function allows the user to operate the display device without staring at it. In particular, the driver can operate the display device without significantly shifting their gaze from the road ahead, thereby improving safety while driving and parking. The diagonal length of the display unit of the display devices 5000a to 5000d is preferably 5 inches or more, and more preferably 10 inches or more. For example, a display device with a diagonal length of about 13 inches can be suitably used as the display devices 5000a to 5000d.

[0628] The display devices 5000a to 5000d may be flexible. Having flexibility allows the display devices to be installed along a curved surface, even if the surface to which they are installed is curved. For example, the display devices can be installed along a curved surface such as a dashboard 5002 or a ceiling 5004.

[0629] A plurality of cameras 5005 may be installed outside the vehicle. By installing the cameras 5005, it is possible to capture images of the surroundings of the vehicle, for example, the situation on the rear side. Fig. 41 shows an example in which the cameras 5005 are installed instead of the side mirrors, but it is also possible to install both the side mirrors and the cameras.

[0630] A CCD camera or a CMOS camera can be used as the camera 5005. In addition to these cameras, an infrared camera may also be used in combination. The output level of an infrared camera increases as the temperature of the subject increases, so it can detect or extract living organisms such as people or animals.

[0631] The image captured by the camera 5005 can be output to one or more of the display devices 5000a to 5000d. The display devices 5000a to 5000d are mainly used to assist vehicle driving. By capturing images of the rear and lateral conditions with a wide angle of view using the camera 5005 and displaying the images on one or more of the display devices 5000a to 5000d, the driver can view blind spots, thereby preventing accidents from occurring.

[0632] A range image sensor may be provided on the roof of the vehicle, and an image obtained by the range image sensor may be displayed on one or more of the display devices 5000a to 5000d. The range image sensor may be an image sensor or a LIDAR (Light Detection and Ranging) sensor. By displaying the image obtained by the image sensor and the image obtained by the range image sensor on one or more of the display devices 5000a to 5000d, more information can be provided to the driver, and driving assistance can be provided.

[0633] Any one or more of the display devices 5000a to 5000d may have a function to display map information, traffic information, television images, DVD images, and the like.

[0634] It is preferable that at least one of the display devices 5000a to 5000d is provided with a display panel having an imaging function. For example, when the driver touches the display panel, the vehicle can perform biometric authentication such as fingerprint authentication or palm print authentication. The vehicle may have a function to adjust the environment to suit the driver's preferences when the driver is authenticated by biometric authentication. For example, it is preferable that one or more of the following be performed after authentication: adjusting the seat position, adjusting the steering wheel position, adjusting the direction of the camera 5005, setting the brightness, setting the air conditioner, setting the wiper speed (frequency), setting the audio volume, and reading out an audio playlist.

[0635] When the driver is authenticated by biometric authentication, the car can be put into a state where it can be driven, for example, with the engine running, which is preferable because it eliminates the need for a key, which was previously required.

[0636] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]

[0637] AL: wiring, C11: capacitance, CDB: wiring, CL: wiring, EL: light-emitting device, ELB: light-emitting device, ELG: light-emitting device, ELR: light-emitting device, IVB: wiring, M11: transistor, M12: transistor, M13: transistor, M14: transistor, M15: transistor, PD1: light-receiving device, PD2: light-receiving device, RE[i+1]: wiring, RE[i]: wiring, RE[k]: wiring, RE: Wiring, RS[i+1]: Wiring, RS[i]: Wiring, RS: Wiring, SCL: Wiring, SE[i+1]: Wiring, SE[i]: Wiring, SE[k]: Wiring, SE: Wiring, SFB: Wiring, SFR: Wiring, SH: Node, SL: Wiring, SLB[j+1]: Wiring, SLB[j]: Wiring, SLB: Wiring, SLG[j+1]: Wiring, SLG[j]: Wiring, SLG: Wiring, SLR[j+1]: Wiring, SLR[j]: Wiring, SLR: Wiring, S OUT:Signal, SW[i+1]: Wiring, SW[i]: Wiring, SW[k]: Wiring, SW: Wiring, T11: Time, T12: Time, T13: Time, T14: Time, T21: Time, T22: Time, T23: Time, T24: Time, T31: Time, T32: Time, T33: Time, T34: Time, T 41: Time, T42: Time, T43: Time, T44: Time, T51: Time, TX[i+1]: Wiring, TX[i]: Wiring, TX[k]: Wiring, TX: Wiring, VCL: Wiring, VCP: Wiring, VIV: Wiring, VPI: Wiring, VRS: Wiring, VRSF: Wiring, WX[j+1]: Wiring, WX [j]: wiring, WX: wiring, 10: display device, 11A: display unit, 11B: display unit, 11C: display unit, 11D: display unit, 11E: display unit, 11: display unit, 12: drive circuit unit, 13: drive circuit unit, 14: drive circuit unit, 15: circuit unit, 21B: pixel circuit, 21B[i+1,j+1]: pixel circuit, 21B[i+1,j]: pixel circuit, 21B[i,j+1]: pixel circuit, 21B[i,j]: pixel circuit, 21G: pixel circuit, 21G[i+1,j+1]: pixel circuit, 21G[i+1,j]: pixel circuit, 21G[i,j+1]: pixel circuit, 21G[i,j]: pixel circuit, 2 1IR: pixel circuit, 21R: pixel circuit, 21R[i+1,j+1]: pixel circuit, 21R[i+1,j]: pixel circuit, 21R[i,j+1]: pixel circuit, 21R[i,j]: pixel circuit, 21: pixel circuit, 22[i+1,j+1]: pixel circuit, 22[i+1,j]: pixel circuit, 22[i,j+1]: pixel circuit, 22[i,j]: pixel circuit, 22[k,j+1]: pixel circuit, 22: pixel circuit, 30[i+1,j+1]: pixel, 30[i+1,j]: pixel, 30[i,j+1]: pixel, 30[i,j]: pixel, 30: pixel, 31B: light ,31G: Light, 31IR: Infrared light, 31R: Light, 32G: Reflected light, 32IR: Reflected light, 32R: Light, 50: Circuit, 51[j]: Circuit, 51: Circuit, 52[j]: Circuit, 52: Circuit, 53[j]: Circuit, 53: Circuit, 54: Circuit, 55: Circuit, 56: Circuit, 61: Transistor, 62: Transistor, 63: Transistor, 64: Transistor, 65: Transistor, 66: Transistor, 67: Transistor, 68: Transistor, 69: Transistor, 71: Transistor, 72: Transistor, 73: Transistor, 74: Transistor, 81: Capacitance,82: Capacitor, 83: Capacitor, 84: Capacitor, 91: Blood vessel, 93: Biological tissue, 100A: Display device, 100B: Display device, 100C: Display device, 100D: Display device, 100E: Display device, 100F: Display device, 100G: Display device, 100H: Display device, 100: Display device, 101: Layer, 102: Substrate, 103: Housing, 104: Light source, 105: Protective member, 106: Substrate, 108: Object, 110a: Subpixel, 110A: Pixel, 110b: Subpixel, 110c: Subpixel, 110d: Subpixel, 110e: Subpixel, 110f: Subpixel, 110: Pixel, 111a: Pixel Element electrode, 111b: pixel electrode, 111c: pixel electrode, 111d: pixel electrode, 111e: pixel electrode, 111f: pixel electrode, 113a: first layer, 113b: second layer, 113c: third layer, 113d: fourth layer, 113e: fifth layer, 113f: seventh layer, 113: layer, 114: sixth layer, 115: common electrode, 118A: first sacrificial layer, 118a: first sacrificial layer, 118B: first sacrificial layer, 118b: first sacrificial layer, 118c: first sacrificial layer, 118d: first sacrificial layer, 118e: first sacrificial layer, 119A: second sacrificial layer, 119a: second sacrificial layer, 1 19B: second sacrificial layer, 119b: second sacrificial layer, 119c: second sacrificial layer, 119d: second sacrificial layer, 119e: second sacrificial layer, 119: resin layer, 120: substrate, 121: insulating layer, 123: conductive layer, 130a: light-emitting device, 130B: light-emitting device, 130b: light-emitting device, 130c: light-emitting device, 130f: light-emitting device, 130G: light-emitting device, 130IR: light-emitting device, 130R: light-emitting device, 131: protective layer, 133: gap, 140: connecting portion, 142: adhesive layer, 148: light-shielding layer, 150d: light-receiving device, 150e: light-receiving device chair, 150IRS: light receiving device, 150PS: light receiving device, 151: substrate, 152: substrate, 162: display unit, 164: circuit, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 180A: pixel, 180B: pixel, 180C: pixel, 180D: pixel, 181A: first hole injection layer, 181a: first hole injection layer, 181B: second hole injection layer, 181b: second hole injection layer, 181c: third hole injection layer, 181f: seventh hole injection layer, 182A: first hole transport layer, 182a: first hole transport layer, 182B: second hole transport layer,182b: second hole transport layer, 182c: third hole transport layer, 182d: fourth hole transport layer, 182e: fifth hole transport layer, 182f: seventh hole transport layer, 183A: first light-emitting layer, 183a: first light-emitting layer, 183B: second light-emitting layer, 183b: second light-emitting layer, 183c: third light-emitting layer, 183f: fourth light-emitting layer, 184A: first electron transport layer, 184a: first electron transport layer, 184B: second electron transport layer, 184b: second electron transport layer, 184c: third electron transport layer, 184d: fourth electron transport layer, 184e: fifth electron transport layer, 184f: seventh Electron transport layer, 185d: first active layer, 185e: second active layer, 190a: resist mask, 190b: resist mask, 201: transistor, 204: connection portion, 205a: transistor, 205e: transistor, 209: transistor, 210: transistor, 211: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 228: region, 231i: channel formation region, 231n: low resistance region, 231: semiconductor layer, 242: connection portion layer, 400: portable information terminal, 402: housing, 404: display unit, 406: finger, 408: area, 410: area, 412: image, 500: display device, 501: electrode, 502: electrode, 503: area, 512B_1: light-emitting unit, 512B_2: light-emitting unit, 512B_3: light-emitting unit, 512G_1: light-emitting unit, 512G_2: light-emitting unit, 512G_3: light-emitting unit, 512R_1: light-emitting unit, 512R_2: light-emitting unit, 512R_3: light-emitting unit, 521: layer, 522: layer, 523B: light-emitting layer, 523G: light-emitting layer, 523R: light-emitting Optical layer, 524: layer, 525: layer, 531: intermediate layer, 541: insulating layer, 542: insulating layer, 550B: light-emitting device, 550G: light-emitting device, 550R: light-emitting device, 772: electrode, 786a: EL layer, 786b: EL layer, 786: EL layer, 788: electrode, 4411: light-emitting layer, 4412: light-emitting layer, 4413: light-emitting layer, 4420: layer, 4430: layer, 4440: intermediate layer, 5000a: display device, 5000b: display device, 5000c: display device, 5000d: display device, 5002: dashboard, 5004: ceiling, 5005: camera, 5006: handle,5008: Windshield, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote control device, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. having a plurality of pixels, the pixel includes a first pixel circuit, a second pixel circuit, a third pixel circuit, and a fourth pixel circuit; the first pixel circuit includes a first light receiving device, a second light receiving device, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a first capacitor, and a first wiring; one electrode of the first light-receiving device is electrically connected to the first wiring; the other electrode of the first light-receiving device is electrically connected to one of the source and the drain of the first transistor; one electrode of the second light receiving device is electrically connected to the first wiring; the other electrode of the second light-receiving device is electrically connected to one of the source and the drain of the second transistor; the other of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the first transistor; the other of the source and the drain of the first transistor is electrically connected to one electrode of the first capacitor; the other of the source and the drain of the first transistor is electrically connected to the one of the source and the drain of the third transistor; the other of the source and the drain of the first transistor is electrically connected to the gate of the fourth transistor; one of a source or a drain of the fourth transistor is electrically connected to one of a source or a drain of the fifth transistor; the first light receiving device has a function of detecting visible light, the second light receiving device has a function of detecting infrared light, a light receiving area of ​​the first light receiving device is smaller than a light receiving area of ​​the second light receiving device; the second pixel circuit includes a first light-emitting device; the first light-emitting device has a function of emitting red visible light, one electrode of the first light-emitting device is electrically connected to the first wiring; the third pixel circuit includes a second light-emitting device; the second light-emitting device has a function of emitting green visible light, one electrode of the second light-emitting device is electrically connected to the first wiring; the fourth pixel circuit includes a third light-emitting device; the third light-emitting device has a function of emitting blue visible light, One electrode of the third light-emitting device is electrically connected to the first wiring.

2. In claim 1, the second pixel circuit includes a sixth transistor, a seventh transistor, an eighth transistor, a ninth transistor, a second capacitor, and a third capacitor; a gate of the sixth transistor electrically connected to a first gate line; one of the source and the drain of the sixth transistor is electrically connected to a first source line; the other of the source and the drain of the sixth transistor is electrically connected to one electrode of the second capacitor; the other of the source and the drain of the sixth transistor is electrically connected to one electrode of the third capacitor; the other of the source and the drain of the sixth transistor is electrically connected to the gate of the seventh transistor; one of a source and a drain of the seventh transistor is electrically connected to a second wiring; the other of the source and the drain of the seventh transistor is electrically connected to one electrode of the first light-emitting device; the other of the source and the drain of the seventh transistor is electrically connected to the other electrode of the second capacitor; the other of the source and the drain of the seventh transistor is electrically connected to the one of the source and the drain of the eighth transistor; a gate of the eighth transistor is electrically connected to the first gate line; the other of the source and the drain of the eighth transistor is electrically connected to the other electrode of the third capacitor; a gate of the ninth transistor electrically connected to a second gate line; one of the source and the drain of the ninth transistor is electrically connected to the other electrode of the third capacitor; The other of the source and the drain of the ninth transistor is electrically connected to a third wiring.

3. In claim 2, the third pixel circuit includes a tenth transistor, an eleventh transistor, a twelfth transistor, a thirteenth transistor, a fourth capacitor, and a fifth capacitor; a gate of the tenth transistor is electrically connected to the first gate line; one of the source and the drain of the tenth transistor is electrically connected to a second source line; the other of the source and the drain of the tenth transistor is electrically connected to one electrode of the fourth capacitor; the other of the source and the drain of the tenth transistor is electrically connected to one electrode of the fifth capacitor; the other of the source and the drain of the tenth transistor is electrically connected to the gate of the eleventh transistor; one of the source and the drain of the eleventh transistor is electrically connected to the second wiring; the other of the source and the drain of the eleventh transistor is electrically connected to one electrode of the second light-emitting device; the other of the source and the drain of the eleventh transistor is electrically connected to the other electrode of the fourth capacitor; the other of the source and the drain of the eleventh transistor is electrically connected to the one of the source and the drain of the twelfth transistor; a gate of the twelfth transistor electrically connected to the first gate line; the other of the source and the drain of the twelfth transistor is electrically connected to the other electrode of the fifth capacitor; a gate of the thirteenth transistor electrically connected to the second gate line; one of the source and the drain of the thirteenth transistor is electrically connected to the other electrode of the fifth capacitor; The other of the source and the drain of the thirteenth transistor is electrically connected to the third wiring.

4. In claim 3, the fourth pixel circuit includes a fourteenth transistor, a fifteenth transistor, a sixteenth transistor, a seventeenth transistor, a sixth capacitor, and a seventh capacitor; a gate of the fourteenth transistor electrically connected to the first gate line; one of the source and the drain of the fourteenth transistor is electrically connected to a third source line; the other of the source and the drain of the fourteenth transistor is electrically connected to one electrode of the sixth capacitor; the other of the source and the drain of the fourteenth transistor is electrically connected to one electrode of the seventh capacitor; the other of the source and the drain of the fourteenth transistor is electrically connected to the gate of the fifteenth transistor; one of the source and the drain of the fifteenth transistor is electrically connected to the second wiring; the other of the source and the drain of the fifteenth transistor is electrically connected to one electrode of the third light-emitting device; the other of the source and the drain of the fifteenth transistor is electrically connected to the other electrode of the sixth capacitor; the other of the source and the drain of the fifteenth transistor is electrically connected to one of the source and the drain of the sixteenth transistor; a gate of the sixteenth transistor is electrically connected to the first gate line; the other of the source and the drain of the sixteenth transistor is electrically connected to the other electrode of the seventh capacitor; a gate of the seventeenth transistor electrically connected to the second gate line; one of the source and the drain of the seventeenth transistor is electrically connected to the other electrode of the seventh capacitor; The other of the source and the drain of the seventeenth transistor is electrically connected to the third wiring.

5. In any one of claims 1 to 4, a fourth wiring; the fourth wiring is electrically connected to the other of the source and the drain of the third transistor, The semiconductor device wherein the potential of the fourth wiring is lower than the potential of the first wiring.

6. In any one of claims 1 to 4, a fourth wiring; the fourth wiring is electrically connected to the other of the source and the drain of the third transistor, The semiconductor device has a potential of the fourth wiring higher than a potential of the first wiring.

7. In any one of claims 1 to 6, the pixel has a fifth pixel circuit; the fifth pixel circuit has a fourth light-emitting device; the fourth light-emitting device has a function of emitting infrared light, One electrode of the fourth light emitting device is electrically connected to the first wiring.

8. A semiconductor device comprising: the semiconductor device according to any one of claims 1 to 6; a fourth light-emitting device; and a housing; the fourth light-emitting device has a function of emitting infrared light, The fourth light-emitting device is an electronic device having a function of emitting light to the outside through the semiconductor device.

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