Scintillator panel, radiation detector, method of manufacturing a scintillator panel, and method of manufacturing a radiation detector

The scintillator panel design with a flexible substrate and intermediate layer addresses contact and cracking issues, ensuring optimal sensor panel contact and preventing cracks for improved imaging performance.

JP7824124B2Active Publication Date: 2026-03-04HAMAMATSU PHOTONICS KK
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Patent Information

Application Number
JP2022048187
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-03-24
Publication Date
2026-03-04
Estimated Expiration
2042-03-24

AI Technical Summary

Technical Problem

Scintillator panels with flexible substrates face challenges in maintaining proper contact with sensor panels and are prone to cracks during bending.

Method used

A scintillator panel design featuring a flexible support substrate, columnar crystals with tapered ends, and an intermediate layer between the substrate and scintillator layer, which includes a metal or organic layer to enhance contact and prevent cracking.

Benefits of technology

Ensures optimal contact with sensor panels and effectively prevents cracks in the scintillator layer, enabling high-resolution and high-brightness radiographic imaging.

✦ Generated by Eureka AI based on patent content.

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Abstract

To provide a scintillator panel capable of optimizing contact with the light receiving surface of a sensor panel and suppressing the occurrence of a crack in a scintillator layer, a method for manufacturing the scintillator panel, a radiation detector including the scintillator panel, and a method for manufacturing the radiation detector.SOLUTION: A scintillator panel 1 includes a support substrate 2 which has flexibility, a scintillator layer 3 which includes a plurality of columnar crystals 30, and an intermediate layer 4 which is arranged between the support substrate 2 and the scintillator layer 3. The plurality of columnar crystals 30 include a plurality of first end parts 31 on the side of the support substrate 2 and a plurality of second end parts 32 on the side opposite to the support substrate 2. Each of the plurality of first end parts 31 becomes thinner toward the side of the support substrate 2. Each of the plurality of second end parts 32 has an end surface 32a along a plane. A part of the intermediate layer 4 is arranged at least in an area R between the plurality of first end parts 31.SELECTED DRAWING: Figure 1
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Description

[Technical Field]

[0001] The present invention relates to a scintillator panel, a radiation detector, a method for manufacturing a scintillator panel, and a method for manufacturing a radiation detector. [Background technology]

[0002] A scintillator panel is known that includes a support substrate and a scintillator layer formed on the support substrate by a vapor deposition method (see, for example, Patent Document 1). Such a scintillator panel may constitute a radiation detector by being placed on the light-receiving surface of a sensor panel, with the support substrate positioned on the opposite side of the scintillator layer from the sensor panel. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 4451843 Summary of the Invention [Problem to be solved by the invention]

[0004] Unlike a case where a scintillator layer is formed on the light-receiving surface of a sensor panel by vapor deposition, the scintillator panel described above requires proper contact with the light-receiving surface of the sensor panel. Furthermore, in the scintillator panel described above, if the supporting substrate is flexible, it becomes easy to arrange the scintillator panel on the light-receiving surface of the sensor panel, but there is a concern that cracks may occur in the scintillator layer.

[0005] An object of the present invention is to provide a scintillator panel that can optimize contact with the light-receiving surface of a sensor panel and suppress the occurrence of cracks in the scintillator layer, a method for manufacturing the same, and a radiation detector that includes such a scintillator panel, and a method for manufacturing the same. [Means for solving the problem]

[0006] The scintillator panel of the present invention comprises a flexible support substrate, a scintillator layer including a plurality of columnar crystals, and an intermediate layer arranged between the support substrate and the scintillator layer, wherein the plurality of columnar crystals include a plurality of first ends on the support substrate side and a plurality of second ends on the opposite side of the support substrate, each of the plurality of first ends tapering toward the support substrate side, and each of the plurality of second ends has an end face along a plane, and a portion of the intermediate layer is arranged in the region between at least the plurality of first ends.

[0007] In the scintillator panel, each of the second ends of the columnar crystals has an end face along a plane. This ensures proper contact between the light-receiving surface of the sensor panel and the scintillator panel when the scintillator layer is disposed on the light-receiving surface of the sensor panel with the support substrate positioned on the opposite side of the scintillator layer from the sensor panel. Furthermore, in the scintillator panel, a portion of the intermediate layer is disposed in the region between the first ends of the columnar crystals. This prevents cracks from occurring in the scintillator layer even when the scintillator panel is bent. Therefore, the scintillator panel can ensure proper contact with the light-receiving surface of the sensor panel and prevent cracks from occurring in the scintillator layer.

[0008] In the scintillator panel of the present invention, a portion of the intermediate layer may be disposed over at least the entire region between the plurality of first ends, thereby reliably suppressing the occurrence of cracks in the scintillator layer.

[0009] In the scintillator panel of the present invention, when the distance between the support substrate and the scintillator layer is D, a portion of the intermediate layer may reach a position that is at least D away from the tips of the first ends. This makes it possible to more reliably suppress the occurrence of cracks in the scintillator layer.

[0010] In the scintillator panel of the present invention, where the thickness of the scintillator layer is T, a portion of the intermediate layer may reach a position that is 0.2 T or more away from the tips of the first end portions. This makes it possible to more reliably suppress the occurrence of cracks in the scintillator layer.

[0011] In the scintillator panel of the present invention, the intermediate layer includes a metal layer formed along the surface of each of the first ends and an organic layer disposed in at least a region between the first ends via the metal layer, and the metal layer may have a light reflecting function or a light absorbing function. This makes it possible to realize an intermediate layer that exhibits a light reflecting function or a light absorbing function and can suppress the occurrence of cracks in the scintillator layer.

[0012] In the scintillator panel of the present invention, the intermediate layer includes an organic layer disposed at least in a region between the plurality of first ends, and the organic layer may have a light reflecting function or a light absorbing function, thereby realizing an intermediate layer that exhibits a light reflecting function or a light absorbing function and can suppress the occurrence of cracks in the scintillator layer.

[0013] In the scintillator panel of the present invention, when viewed from the thickness direction of the support substrate, at least a portion of the outer edge of the support substrate, at least a portion of the outer edge of the scintillator layer, and at least a portion of the outer edge of the intermediate layer may be aligned. This makes it possible to eliminate an area where the scintillator layer is not present in at least a portion of the outer edge of the support substrate. In other words, the area of ​​the scintillator layer can be increased by the area of ​​that area. In other words, the area of ​​the support substrate can be reduced by the area of ​​that area.

[0014] In the scintillator panel of the present invention, the second end portions may be connected to one another, which can more reliably prevent cracks from occurring in the scintillator layer.

[0015] The scintillator panel of the present invention may further include a protective layer covering the supporting substrate, the scintillator layer, and the intermediate layer, which can protect the plurality of deliquescent columnar crystals.

[0016] The scintillator panel of the present invention may further include an adhesive layer disposed on the opposite side of the scintillator layer from the supporting substrate, which allows the scintillator panel to be easily and reliably adhered to the light-receiving surface of the sensor panel.

[0017] In the scintillator panel of the present invention, where the thickness of the scintillator layer is T, the thickness of the support substrate may be equal to or greater than 0.2 T. This can prevent cracks from occurring in the scintillator layer due to local external forces acting on parts of the scintillator panel, for example, when the scintillator panel is handled.

[0018] The radiation detector of the present invention comprises the above-mentioned scintillator panel and a sensor panel having a light-receiving surface, and the scintillator panel is arranged on the light-receiving surface with the scintillator layer positioned on the sensor panel side relative to the support substrate.

[0019] In the radiation detector, the contact between the light receiving surface of the sensor panel and the scintillator panel is optimized, and therefore the radiation detector can acquire an appropriate radiation image.

[0020] The method for manufacturing a scintillator panel of the present invention is a method for manufacturing the scintillator panel, comprising: a first step of forming a scintillator layer on an auxiliary substrate by vapor deposition; a second step of forming an intermediate layer on the scintillator layer after the first step so that a portion of the intermediate layer is positioned in at least the region between the first ends; a third step of forming a support substrate on the intermediate layer after the second step; and a fourth step of removing the auxiliary substrate from the scintillator layer after the third step.

[0021] According to the above-described method for manufacturing a scintillator panel, it is possible to obtain a scintillator panel in which contact with the light-receiving surface of the sensor panel is optimized and the occurrence of cracks in the scintillator layer is suppressed.

[0022] The method for manufacturing a scintillator panel of the present invention may further include a fifth step of cutting at least the scintillator layer, the intermediate layer, and the support substrate in the thickness direction of the support substrate after the third step and before the fourth step. This allows the scintillator layer, the intermediate layer, and the support substrate to be cut all at once while they are stably supported by the auxiliary substrate.

[0023] In the method for manufacturing a scintillator panel of the present invention, the auxiliary substrate may be cut together with the scintillator layer, the intermediate layer, and the support substrate in the thickness direction of the support substrate in the fifth step, which allows the auxiliary substrate to be cut together with the scintillator layer, the intermediate layer, and the support substrate at the same time.

[0024] The method for producing a scintillator panel of the present invention may further include a sixth step of cutting the scintillator layer, intermediate layer, and support substrate in the thickness direction of the support substrate after the fourth step, which allows the scintillator layer, intermediate layer, and support substrate to be easily and reliably cut to a predetermined size.

[0025] The method for manufacturing a radiation detector of the present invention is a method for manufacturing the above-mentioned radiation detector, and comprises a first step of preparing a scintillator panel and a sensor panel, and a second step, after the first step, of arranging the scintillator panel on the light-receiving surface so that the support substrate is located on the opposite side of the scintillator layer from the sensor panel.

[0026] According to the above method for manufacturing a radiation detector, it is possible to obtain a radiation detector equipped with a scintillator panel in which contact with the light receiving surface of the sensor panel is optimized and the occurrence of cracks in the scintillator layer is suppressed. [Effects of the Invention]

[0027] According to the present invention, it is possible to provide a scintillator panel and a method for manufacturing the same that can optimize contact with the light-receiving surface of a sensor panel and suppress the occurrence of cracks in the scintillator layer, as well as a radiation detector equipped with such a scintillator panel and a method for manufacturing the same. [Brief explanation of the drawings]

[0028] [Figure 1] FIG. 1 is a cross-sectional view of a scintillator panel according to an embodiment. [Figure 2] 2 is a cross-sectional view of a radiation detector including the scintillator panel shown in FIG. 1. FIG. [Figure 3] 2A to 2C are diagrams illustrating a method for manufacturing the scintillator panel shown in FIG. [Figure 4] 2A to 2C are diagrams illustrating a method for manufacturing the scintillator panel shown in FIG. [Figure 5] 2A to 2C are diagrams illustrating a method for manufacturing the scintillator panel shown in FIG. [Figure 6] 2A to 2C are diagrams illustrating a method for manufacturing the scintillator panel shown in FIG. [Figure 7] 1 is a table showing the characteristics of scintillator panels of Comparative Examples 1 and 2 and Examples 1 and 2. [Figure 8] FIG. 10 is a cross-sectional view of a modified scintillator panel. [Figure 9] FIG. 10 is a cross-sectional view of a modified scintillator panel. [Figure 10] FIG. 10 is a cross-sectional view of a modified scintillator panel. [Figure 11] FIG. 10 is a cross-sectional view of a modified scintillator panel. [Figure 12] FIG. 10 is a cross-sectional view of a modified scintillator panel. [Figure 13] FIG. 10 is a cross-sectional view of a modified scintillator panel. [Figure 14] FIG. 10 is a cross-sectional view of a modified scintillator panel. [Figure 15] FIG. 10 is a cross-sectional view of a modified scintillator panel. [Figure 16]FIG. 10 is a cross-sectional view of a radiation detector according to a modified example. [Figure 17] FIG. 10 is a cross-sectional view of a radiation detector according to a modified example. DETAILED DESCRIPTION OF THE INVENTION

[0029] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In each drawing, the same or corresponding parts are designated by the same reference numerals, and duplicated explanations will be omitted. [Scintillator panel configuration]

[0030] As shown in FIG. 1, the scintillator panel 1 includes a support substrate 2, a scintillator layer 3, an intermediate layer 4, and a protective layer 5. The intermediate layer 4 is disposed between the support substrate 2 and the scintillator layer 3. When viewed in the thickness direction of the support substrate 2 (hereinafter referred to as "direction A"), the outer edge of the support substrate 2, the outer edge of the scintillator layer 3, and the outer edge of the intermediate layer 4 are aligned. That is, the side surfaces of the support substrate 2, the side surfaces of the scintillator layer 3, and the side surfaces of the intermediate layer 4 are flush with each other. As shown in FIG. 2, the scintillator panel 1 and a sensor panel 11 form a radiation detector 10. In the radiation detector 10, when radiation (e.g., X-rays) is incident on the scintillator panel 1, scintillation light is generated in the scintillator panel 1, and the scintillation light is detected by the sensor panel 11. The radiation detector 10 is used as a radiation imaging device, for example, in a medical radiation image diagnostic device, a non-destructive testing device, etc.

[0031] As shown in FIG. 1 , the support substrate 2 includes an organic layer 21 and an inorganic layer 22. The inorganic layer 22 is formed on a surface 21a of the organic layer 21 and functions as a moisture-proof layer. The organic layer 21 may be made of, for example, PET, PEN, PI, PP, PE, PU, ​​PMMA, or the like. The organic layer 21 may have a thickness of, for example, 30 μm or more and 250 μm or less. The inorganic layer 22 may be made of, for example, Al, Cu, Ti, Fe, SUS, or the like. The inorganic layer 22 may have a thickness of, for example, 10 μm or more and 100 μm or less. The support substrate 2 is flexible. The support substrate 2 may be bent to have a curvature radius of, for example, 30 mm or more and 120 mm or less. When the thickness of the scintillator layer 3 (described later) is T, the thickness of the support substrate 2 is 0.2T or more. The support substrate 2 may be a single-layer substrate or a multi-layer substrate. Furthermore, a functional film such as an easy-adhesion coating, an antistatic coating, or a moisture-proof film (polyparaxylylene film) may be formed on the surface of the support substrate 2. Furthermore, the thickness of the support substrate 2 may be 0.5T or more, or even T or more.

[0032] The scintillator layer 3 is disposed on one side of the support substrate 2 (for example, on the side where the inorganic layer 22 is disposed relative to the organic layer 21). The scintillator layer 3 includes a plurality of columnar crystals 30. The plurality of columnar crystals 30 are aligned along a plane perpendicular to the direction A. Each columnar crystal 30 extends in the direction A. The material of the scintillator layer 3 is, for example, CsI:Tl (cesium iodide containing thallium as an activator), CsI:Na (cesium iodide containing sodium as an activator), CsI:Ce (cesium iodide containing cerium as an activator), or CsI:Tl,Eu (cesium iodide containing thallium and europium as activators). The thickness of the scintillator layer 3 is, for example, 50 μm or more and 1000 μm or less (preferably, 50 μm or more and 400 μm or less).

[0033] The plurality of columnar crystals 30 include a plurality of first ends 31 on the support substrate 2 side and a plurality of second ends 32 on the opposite side to the support substrate 2. Each first end 31 tapers toward the support substrate 2 side. The height of each first end 31 (the width of each first end 31 in the direction A) is, for example, 2 μm or more and 5 μm or less. The taper angle of each first end 31 is, for example, 60 degrees or more and 100 degrees or less. Each second end 32 has an end face 32a along a plane perpendicular to the direction A. The plurality of second ends 32 are connected to each other. The plurality of end faces 32a are connected to each other in a flush state. The thickness of the scintillator layer 3 is the average length of each columnar crystal 30 in the direction A. In other words, the thickness of the scintillator layer 3 is the distance between a plane including the plurality of tips 31a of the plurality of first ends 31 and a plane including the plurality of end faces 32a of the plurality of second ends 32.

[0034] The intermediate layer 4 includes a metal layer 41, an organic layer 42, and an adhesive layer 43. The metal layer 41 is formed along the surface of each first end portion 31. The metal layer 41 is formed directly on the surface of each first end portion 31. The metal layer 41 has a light reflecting function (a function of reflecting scintillation light) or a light absorbing function (a function of absorbing scintillation light). The metal layer 41 is made of, for example, Al, Cr, Ni, Ag, Ti, Cu, Au, or the like. The thickness of the metal layer 41 is, for example, 10 nm or more and 1000 nm or less. The organic layer 42 is disposed in the region R between the first end portions 31 via the metal layer 41 and covers the first end portions 31. The material of the organic layer 42 is, for example, parylene (polyparaxylene). The thickness of a portion of the organic layer 42 located closer to the support substrate 2 than a plane including the tips 31a is, for example, 0.5 μm or more and 20 μm or less. The adhesive layer 43 is disposed between the support substrate 2 and the organic layer 42. The support substrate 2 is adhered to the organic layer 42 by the adhesive layer 43. The material of the adhesive layer 43 is a pressure-sensitive adhesive (which does not harden after adhesion) or an adhesive (which hardens after adhesion). The thickness of the adhesive layer 43 is, for example, 0.1 μm or more and 100 μm or less (preferably 25 μm or less).

[0035] A portion of the intermediate layer 4 is disposed in at least a region R between the plurality of first ends 31. In this embodiment, a portion of the organic layer 42 is disposed in the entire region R between the plurality of first ends 31 and penetrates between the plurality of columnar crystals 30 via the region R. Here, if the distance between the support substrate 2 and the scintillator layer 3 (the distance between the "surface of the support substrate 2 facing the scintillator layer 3" and the "plane including the plurality of tips 31a") is D, a portion of the organic layer 42 reaches a position that is D or more from the plurality of tips 31a. Furthermore, if the thickness of the scintillator layer 3 is T, a portion of the organic layer 42 reaches a position that is 0.2T or more from the plurality of tips 31a. As an example, D is 10 μm or more and 20 μm or less, and T is 50 μm or more and 400 μm or less, and a portion of the organic layer 42 reaches a position that is 100 μm or more and 200 μm or less from the plurality of tips 31a. In this embodiment, a portion of the organic layer 42 reaches the second ends 32 between the columnar crystals 30 .

[0036] The protective layer 5 covers the support substrate 2, the scintillator layer 3, and the intermediate layer 4. The material of the protective layer 5 is, for example, parylene (polyparaxylene). The thickness of the protective layer 5 is, for example, about 5 μm. [Configuration of radiation detector]

[0037] As shown in Fig. 2, the radiation detector 10 includes the above-mentioned scintillator panel 1, a sensor panel 11, and an adhesive layer 12. The sensor panel 11 has a light-receiving surface 11a. A plurality of photoelectric conversion elements (not shown) are provided on the sensor panel 11 in a portion along the light-receiving surface 11a. Each photoelectric conversion element forms a pixel, and outputs an electrical signal corresponding to incident scintillation light.

[0038] The scintillator panel 1 is disposed on the light-receiving surface 11a with the scintillator layer 3 positioned on the sensor panel 11 side of the support substrate 2. The adhesive layer 12 is disposed between the light-receiving surface 11a and the scintillator panel 1. The scintillator panel 1 is adhered to the sensor panel 11 by the adhesive layer 12. The material of the adhesive layer 12 is an organic material having optical transparency, such as OCA (Optical Clear Adhesive). The thickness of the adhesive layer 12 is, for example, 0.1 μm or more and 100 μm or less (preferably 25 μm or less). The scintillator panel 1 may also include an adhesive layer 12 disposed on the opposite side of the scintillator layer 3 from the support substrate 2. [Scintillator panel manufacturing method]

[0039] A method for manufacturing the scintillator panel 1 described above will be described. First, as shown in FIG. 3(a), an auxiliary substrate 13 is prepared. The auxiliary substrate 13 may be made of, for example, PET, PEN, PI, PMMA, AL, SUS, or glass. To improve smoothness and releasability, the auxiliary substrate 13 may be coated with, for example, acrylic, fluorine, silicone, alumina, ITO, or SiO2. The thickness of the auxiliary substrate 13 is, for example, 0.1 mm or more and 0.5 mm or less. Next, as shown in FIG. 3(b), a scintillator layer 3 is formed on the auxiliary substrate 13 by vapor deposition (first step). In this embodiment, the scintillator layer 3 is formed on the auxiliary substrate 13 by vapor deposition. As a result, in the plurality of columnar crystals 30, the plurality of second ends 32 are located on the auxiliary substrate 13 side, and the plurality of first ends 31 are located on the opposite side of the auxiliary substrate 13. An example of a vapor deposition method other than vapor deposition is sputtering.

[0040] 4(a), a metal layer 41 is formed by vapor deposition on the surface of each first end portion 31. Then, as shown in FIG. 4(b), an organic layer 42 is formed by CVD so as to cover the auxiliary substrate 13, the scintillator layer 3, and the metal layer 41 (second step). As a result, a portion of the organic layer 42 is disposed in the entire region R between the plurality of first end portions 31, and further extends between the plurality of columnar crystals 30 via the region R.

[0041] Next, as shown in (a) of Fig. 5, the support substrate 2 is bonded to the organic layer 42 by the adhesive layer 43. That is, the support substrate 2 is formed on the intermediate layer 4 configured of the metal layer 41, the organic layer 42, and the adhesive layer 43 (third step). Next, as shown in (b) of Fig. 5, the auxiliary substrate 13, the scintillator layer 3, the intermediate layer 4, and the support substrate 2 are cut in direction A (fifth step). As a result, the side surfaces of the auxiliary substrate 13, the scintillator layer 3, the intermediate layer 4, and the support substrate 2 become flush with each other.

[0042] Next, as shown in Fig. 6(a), the auxiliary substrate 13 is removed from the scintillator layer 3 (fourth step). This exposes the multiple end faces 32a of the multiple second end portions 32. Next, as shown in Fig. 6(b), a protective layer 5 is formed by CVD so as to cover the support substrate 2, the scintillator layer 3, and the intermediate layer 4. This completes the scintillator panel 1. [Radiation detector manufacturing method]

[0043] A method for manufacturing the radiation detector 10 described above will now be described. First, as shown in Fig. 2, a scintillator panel 1 and a sensor panel 11 are prepared (first step). Next, the scintillator panel 1 is bonded to the sensor panel 11 by an adhesive layer 12, with the support substrate 2 positioned on the opposite side of the scintillator layer 3 from the sensor panel 11. That is, the scintillator panel 1 is placed on the light-receiving surface 11a so that the support substrate 2 is positioned on the opposite side of the scintillator layer 3 from the sensor panel 11 (second step). This results in a radiation detector 10. [Action and effect]

[0044] In the scintillator panel 1, each of the plurality of second ends 32 included in the plurality of columnar crystals 30 has an end surface 32a along a plane. This ensures appropriate contact between the light-receiving surface 11a of the sensor panel 11 and the scintillator panel 1 when the scintillator layer 3 is disposed on the light-receiving surface 11a of the sensor panel 11 with the support substrate 2 positioned on the opposite side of the scintillator layer 3 from the sensor panel 11. Furthermore, in the scintillator panel 1, a portion of the intermediate layer 4 is disposed in a region R between the plurality of first ends 31 included in the plurality of columnar crystals 30. This prevents cracks from occurring in the scintillator layer 3 even when the scintillator panel 1 is bent. As a specific example, when the scintillator panel 1 is bent so that the plurality of second ends 32 move away from each other, the plurality of first ends 31 are prevented from approaching each other, and when the scintillator panel 1 is bent so that the plurality of second ends 32 move toward each other, the plurality of first ends 31 are prevented from moving away from each other. As a result, the occurrence of cracks in the scintillator layer 3 is suppressed regardless of how the scintillator panel 1 is bent. As described above, the scintillator panel 1 can ensure appropriate contact with the light receiving surface 11a of the sensor panel 11 and can suppress the occurrence of cracks in the scintillator layer 3.

[0045] In the scintillator panel 1, a portion of the intermediate layer 4 is disposed in the region R between the multiple first ends 31 included in the multiple columnar crystals 30, thereby improving the adhesion between the support substrate 2 and the scintillator layer 3 and suppressing the lifting of the scintillator layer 3 at the outer edge of the support substrate 2.

[0046] In the scintillator panel 1, a part of the intermediate layer 4 is disposed over the entire region R between the plurality of first end portions 31. This makes it possible to reliably suppress the occurrence of cracks in the scintillator layer 3.

[0047] In scintillator panel 1, when the distance between support substrate 2 and scintillator layer 3 is D, part of intermediate layer 4 reaches a position that is further than D from the multiple tips 31a of the multiple first ends 31. This makes it possible to more reliably suppress the occurrence of cracks in scintillator layer 3.

[0048] In the scintillator panel 1, when the thickness of the scintillator layer 3 is T, part of the intermediate layer 4 reaches a position that is 0.2T or more away from the tips 31a of the first ends 31. This makes it possible to more reliably suppress the occurrence of cracks in the scintillator layer 3.

[0049] In the scintillator panel 1, the intermediate layer 4 includes a metal layer 41 formed along the surface of each of the plurality of first end portions 31 and an organic layer 42 disposed in a region R between the plurality of first end portions 31 via the metal layer 41, and the metal layer 41 has a light reflecting function or a light absorbing function. This makes it possible to realize an intermediate layer 4 that exhibits a light reflecting function or a light absorbing function and can suppress the occurrence of cracks in the scintillator layer 3. Note that when the metal layer 41 is formed directly on the surface of each first end portion 31, cavities are less likely to form between the scintillator layer 3 and the metal layer 41 even if abnormal growth occurs in some of the plurality of columnar crystals 30.

[0050] In the scintillator panel 1, when viewed from direction A, the outer edge of the support substrate 2, the outer edge of the scintillator layer 3, and the outer edge of the intermediate layer 4 are all aligned. This makes it possible to eliminate an area where the scintillator layer 3 is not present at the outer edge of the support substrate 2. In other words, the area of ​​the scintillator layer 3 can be increased by the area of ​​that area. In other words, the area of ​​the support substrate 2 can be reduced by the area of ​​that area.

[0051] In the scintillator panel 1, the second end portions 32 are connected to one another, which makes it possible to more reliably prevent cracks from occurring in the scintillator layer 3.

[0052] In the scintillator panel 1, the support substrate 2, the scintillator layer 3, and the intermediate layer 4 are covered with the protective layer 5. This makes it possible to protect the plurality of deliquescent columnar crystals 30.

[0053] In the scintillator panel 1, an adhesive layer 12 is disposed on the side of the scintillator layer 3 opposite to the support substrate 2. This allows the scintillator panel 1 to be adhered to the light receiving surface 11a of the sensor panel 11 easily and reliably.

[0054] In scintillator panel 1, where the thickness of scintillator layer 3 is T, the thickness of support substrate 2 is 0.2T or more. This makes it possible to prevent cracks from occurring in scintillator layer 3 due to local external forces acting on parts of scintillator panel 1, for example, when scintillator panel 1 is handled.

[0055] In the radiation detector 10, the contact between the light receiving surface 11a of the sensor panel 11 and the scintillator panel 1 is optimized. As a specific example, it is difficult for cavities to form or for foreign matter to enter between the light receiving surface 11a and the scintillator panel 1. Therefore, the radiation detector 10 can acquire appropriate radiographic images. For example, if the metal layer 41 has a light reflecting function, it can acquire high-brightness radiographic images, and if the metal layer 41 has a light absorbing function, it can acquire high-resolution radiographic images.

[0056] The manufacturing method for scintillator panel 1 makes it possible to obtain scintillator panel 1 in which contact with light-receiving surface 11a of sensor panel 11 is optimized and cracking is suppressed in scintillator layer 3. Note that while intermediate layer 4 increases adhesion between scintillator layer 3 and support substrate 2, each of multiple second ends 32 has end face 32a along a plane, which reduces adhesion between scintillator layer 3 and auxiliary substrate 13, allowing auxiliary substrate 13 to be easily and reliably peeled off from scintillator layer 3.

[0057] In the method for manufacturing scintillator panel 1, auxiliary substrate 13, scintillator layer 3, intermediate layer 4, and support substrate 2 are cut in direction A. This allows auxiliary substrate 13, scintillator layer 3, intermediate layer 4, and support substrate 2 to be cut all at once while the scintillator layer 3, intermediate layer 4, and support substrate 2 are stably supported by auxiliary substrate 13.

[0058] According to the manufacturing method of the radiation detector 10, it is possible to obtain a radiation detector 10 having a scintillator panel 1 in which contact with the light receiving surface 11a of the sensor panel 11 is optimized and the occurrence of cracks in the scintillator layer 3 is suppressed.

[0059] FIG. 7 is a table showing the characteristics of the scintillator panels of Comparative Examples 1 and 2 and Examples 1 and 2. The scintillator panel of Comparative Example 1 includes a support substrate, a scintillator layer formed directly on the support substrate by vapor deposition, and a parylene layer covering the tips of the columnar crystals included in the scintillator layer, with the parylene layer being disposed on the light-receiving surface of the sensor panel via an adhesive layer. The scintillator panel of Comparative Example 2 includes a support substrate and a scintillator layer formed directly on the support substrate by vapor deposition, with the tips of the columnar crystals included in the scintillator layer being disposed on the light-receiving surface of the sensor panel via an adhesive layer. The scintillator panel of Example 1 includes a support substrate, a scintillator layer disposed so that the tips (first ends) of the columnar crystals are located on the support substrate side, and a parylene layer (intermediate layer) disposed between the support substrate and the scintillator layer, with the bases (second ends) of the columnar crystals being disposed directly on the light-receiving surface of the sensor panel. The scintillator panel of Example 2 comprises a support substrate, a scintillator layer arranged so that the tip ends (first ends) of the columnar crystals are located on the support substrate side, and a parylene layer (intermediate layer) arranged between the support substrate and the scintillator layer, and the base ends (second ends) of the columnar crystals are arranged on the light receiving surface of the sensor panel via an adhesive layer.

[0060] As shown in FIG. 7 , the MTF (resolution characteristics at a frequency of 3 L / mm) obtained by the scintillator panels of Examples 1 and 2 was closer to 1 than the MTF obtained by the scintillator panels of Comparative Examples 1 and 2. This demonstrates that the scintillator panels of Examples 1 and 2 are capable of acquiring radiographic images with higher resolution than the scintillator panels of Comparative Examples 1 and 2. Furthermore, the LOP (light output (brightness) characteristics) obtained by the scintillator panels of Examples 1 and 2 was greater than the LOP obtained by the scintillator panels of Comparative Examples 1 and 2. This demonstrates that the scintillator panels of Examples 1 and 2 are capable of acquiring radiographic images with higher brightness than the scintillator panels of Comparative Examples 1 and 2. [Variations]

[0061] The present invention is not limited to the above-described embodiment. For example, in the scintillator panel 1, it is sufficient that a portion of the intermediate layer 4 is disposed in at least the region R between the plurality of first end portions 31. Furthermore, in the scintillator panel 1, it is sufficient that a portion of the intermediate layer 4 is disposed in at least a part of the region R. Here, the deformability of the intermediate layer 4 will be described with reference to Figs. 8 to 14.

[0062] As shown in FIG. 8 , a portion of the organic layer 42 may not reach the second ends 32 between the columnar crystals 30. As shown in FIGS. 9(a) and 9(b), the intermediate layer 4 may include a metal layer 41, an organic layer 42, an inorganic layer 44, an organic layer 45, and an adhesive layer 43. The inorganic layer 44 is disposed between the organic layer 42 and the adhesive layer 43 and functions as a moisture-proof layer. Examples of materials for the inorganic layer 44 include Al, Cr, Ni, Ag, Ti, Cu, Au, SiO 2 , Al 2 O 3 , SiON, and SiN. The organic layer 45 is disposed between the inorganic layer 44 and the adhesive layer 43. Examples of materials for the organic layer 45 include parylene (polyparaxylene). In this case, the support substrate 2 may include the organic layer 21 but not the inorganic layer 22. Furthermore, a portion of the organic layer 42 may reach the second ends 32 between the columnar crystals 30, as shown in (a) of Figure 9, or may not reach the second ends 32 between the columnar crystals 30, as shown in (b) of Figure 9.

[0063] 10(a), the intermediate layer 4 includes a metal layer 41 and an adhesive layer 43, and may not include an organic layer 42. In this case, a portion of the adhesive layer 43 is disposed in a region R between the plurality of first end portions 31. As shown in FIG. 10(b), a portion of the organic layer 42 may be disposed only in a region R between the plurality of first end portions 31.

[0064] As shown in (a) and (b) of FIG. 11, the intermediate layer 4 includes an organic layer 42, an adhesive layer 46, an organic layer 47, and an adhesive layer 43, and may not include the metal layer 41. The organic layer 47 is disposed between the organic layer 42 and the adhesive layer 43 and has a light-reflecting or light-absorbing function. The organic layer 47 is, for example, a sheet containing a pigment. The sheet material may be, for example, PET, PEN, PI, PP, PE, PU, ​​PMMA, or the like. When the organic layer 47 has a light-reflecting function, the pigment may be, for example, TiO2, or the like. When the organic layer 47 has a light-absorbing function, the pigment may be, for example, C, or the like. The thickness of the organic layer 47 is, for example, 30 μm or more and 250 μm or less. The adhesive layer 46 is disposed between the organic layer 42 and the organic layer 47. The organic layer 47 is adhered to the organic layer 42 by the adhesive layer 46. In this case, the support substrate 2 may be adhered to the organic layer 47 by an adhesive layer 43 as shown in Fig. 11(a), or may be adhered to an organic layer 48 formed on the organic layer 47 by an adhesive layer 43 as shown in Fig. 11(b). The material of the organic layer 48 is, for example, parylene (polyparaxylene).

[0065] 12(a) and 12(b), the intermediate layer 4 includes an adhesive layer 46, an organic layer 47, and an adhesive layer 43, and may not include the metal layer 41 and the organic layer 42. The intermediate layer 4 shown in FIG. 12(a) differs from the intermediate layer 4 shown in FIG. 11(a) in that a portion of the adhesive layer 46 is disposed in a region R between the plurality of first end portions 31. The intermediate layer 4 shown in FIG. 12(b) differs from the intermediate layer 4 shown in FIG. 11(b) in that a portion of the adhesive layer 46 is disposed in a region R between the plurality of first end portions 31.

[0066] As shown in (a) and (b) of FIG. 13, the intermediate layer 4 includes an organic layer 42, an organic layer 49, and an adhesive layer 43, and may not include a metal layer 41. The organic layer 49 is disposed between the organic layer 42 and the adhesive layer 43 and has a light-reflecting or light-absorbing function. The organic layer 49 is, for example, a coating film containing a pigment. The coating film may be made of, for example, epoxy, silicone, fluorine, urethane, acrylic, or the like. When the organic layer 49 has a light-reflecting function, the pigment may be, for example, TiO2, or the like. When the organic layer 49 has a light-absorbing function, the pigment may be, for example, C, or the like. The thickness of the organic layer 49 is, for example, 5 μm or more and 250 μm or less. In this case, the support substrate 2 may be bonded to the organic layer 49 by the adhesive layer 43 as shown in (a) of FIG. 13, or may be bonded to an organic layer 48 formed on the organic layer 49 by the adhesive layer 43 as shown in (b) of FIG. 13.

[0067] As shown in Figures 14(a) and 14(b), the intermediate layer 4 includes an organic layer 49 and an adhesive layer 43, and may not include the metal layer 41 and the organic layer 42. The intermediate layer 4 shown in Figure 14(a) differs from the intermediate layer 4 shown in Figure 13(a) in that a portion of the organic layer 49 is disposed in the region R between the multiple first end portions 31. The intermediate layer 4 shown in Figure 14(b) differs from the intermediate layer 4 shown in Figure 13(b) in that a portion of the organic layer 49 is disposed in the region R between the multiple first end portions 31. In this case, too, it is possible to achieve an intermediate layer 4 that exhibits a light reflecting function or a light absorbing function and can suppress the occurrence of cracks in the scintillator layer 3.

[0068] In the scintillator panel 1, the intermediate layer 4 may not include a layer having a light reflecting function or a light absorbing function, and the support substrate 2 may include a layer having a light reflecting function or a light absorbing function. In the scintillator layer 3, the second ends 32 may not be connected to each other. As shown in FIG. 15 , the protective layer 5 may not cover the surface of the scintillator layer 3 opposite the support substrate 2. In this case, the adhesive layer 12 may be formed directly on the surface of the scintillator layer 3 opposite the support substrate 2 as part of the scintillator panel 1. In the scintillator panel 1, it is sufficient that at least a portion of the outer edge of the support substrate 2, at least a portion of the outer edge of the scintillator layer 3, and at least a portion of the outer edge of the intermediate layer 4 coincide with each other when viewed from direction A.

[0069] 16, the radiation detector 10 may also include a sealing member 14. The sealing member 14 extends in a frame shape in a region of the surface of the sensor panel 11 that surrounds the light receiving surface 11a, and covers the side surfaces of the scintillator panel 1. Examples of materials for the sealing member 14 include epoxy, silicone, fluorine, urethane, and acrylic. The material for the sealing member 14 may include a filler material made of an inorganic material such as glass. The filler material may have moisture resistance higher than that of the main material of the sealing member 7, and may be, for example, SiO2, Al2O3, or TiO2.

[0070] 17(a) and 17(b), the radiation detector 10 may not have an adhesive layer 12 disposed between the sensor panel 11 and the scintillator panel 1, and may instead have the sensor panel 11 and the scintillator panel 1 disposed in a housing (not shown) together with an elastic member 15 such as a sponge, thereby maintaining contact between the sensor panel 11 and the scintillator panel 1. The radiation detector 10 may also have another member such as a fiber optic plate disposed between the sensor panel 11 and the scintillator panel 1.

[0071] Furthermore, in the fifth step of the method for manufacturing scintillator panel 1, it is sufficient that at least scintillator layer 3, intermediate layer 4, and support substrate 2 are cut in direction A. That is, auxiliary substrate 13 does not have to be cut in the fifth step. Even in this case, scintillator layer 3, intermediate layer 4, and support substrate 2 can be cut all at once in a stable state in which they are supported by auxiliary substrate 13. Note that in the fifth step, a cut may be made in auxiliary substrate 13 as long as auxiliary substrate 13 is not completely cut.

[0072] Furthermore, in the method for manufacturing scintillator panel 1, after the fourth step in which auxiliary substrate 13 is removed from scintillator layer 3, scintillator layer 3, intermediate layer 4, and support substrate 2 may be further cut in direction A (sixth step). In this case, scintillator layer 3, intermediate layer 4, and support substrate 2 can be easily and reliably cut to a predetermined size. Furthermore, in the method for manufacturing scintillator panel 1, scintillator layer 3, intermediate layer 4, and support substrate 2 may not be cut before the fourth step in which auxiliary substrate 13 is removed from scintillator layer 3, and scintillator layer 3, intermediate layer 4, and support substrate 2 may be cut after the fourth step in which auxiliary substrate 13 is removed from scintillator layer 3. [Explanation of symbols]

[0073] 1...scintillator panel, 2...support substrate, 3...scintillator layer, 4...intermediate layer, 5...protective layer, 10...radiation detector, 11...sensor panel, 11a...light-receiving surface, 12...adhesive layer, 13...auxiliary substrate, 30...columnar crystal, 31...first end, 31a...tip, 32...second end, 32a...end surface, 41...metal layer, 42, 49...organic layer, R...region.

Claims

1. a flexible supporting substrate; a scintillator layer including a plurality of columnar crystals; an intermediate layer disposed between the support substrate and the scintillator layer; the plurality of columnar crystals include a plurality of first ends on the support substrate side and a plurality of second ends on the opposite side to the support substrate, Each of the plurality of first ends is tapered toward the support substrate, Each of the plurality of second ends has an end surface along a plane, A scintillator panel, wherein a portion of the intermediate layer is disposed over at least the entire region between the plurality of first ends.

2. A flexible supporting substrate; a scintillator layer including a plurality of columnar crystals; an intermediate layer disposed between the support substrate and the scintillator layer; the plurality of columnar crystals include a plurality of first ends on the support substrate side and a plurality of second ends on the opposite side to the support substrate, Each of the plurality of first ends is tapered toward the support substrate, Each of the plurality of second ends has an end surface along a plane, a portion of the intermediate layer is disposed in at least a region between the plurality of first ends; A scintillator panel, wherein when the distance between the support substrate and the scintillator layer is D, the portion of the intermediate layer reaches a position that is more than D away from the multiple tips of the multiple first ends.

3. A flexible supporting substrate; a scintillator layer including a plurality of columnar crystals; an intermediate layer disposed between the support substrate and the scintillator layer; the plurality of columnar crystals include a plurality of first ends on the support substrate side and a plurality of second ends on the opposite side to the support substrate, Each of the plurality of first ends is tapered toward the support substrate, Each of the plurality of second ends has an end surface along a plane, a portion of the intermediate layer is disposed in at least a region between the plurality of first ends; A scintillator panel, wherein the portion of the intermediate layer reaches a position that is 0.2T or more from the tips of the first ends, where T is the thickness of the scintillator layer.

4. The intermediate layer is a metal layer formed along a surface of each of the plurality of first ends; an organic layer disposed in the region between at least the plurality of first ends with the metal layer interposed therebetween; 4. The scintillator panel according to claim 1, wherein the metal layer has a light reflecting function or a light absorbing function.

5. the intermediate layer includes an organic layer disposed in at least the region between the plurality of first ends; 4. The scintillator panel according to claim 1, wherein the organic layer has a light reflecting function or a light absorbing function.

6. A scintillator panel according to any one of claims 1 to 5, wherein, when viewed in the thickness direction of the support substrate, at least a portion of the outer edge of the support substrate, at least a portion of the outer edge of the scintillator layer, and at least a portion of the outer edge of the intermediate layer are coincident.

7. 7. The scintillator panel according to claim 1, wherein the second end portions are connected to one another.

8. 8. The scintillator panel according to claim 1, further comprising a protective layer covering the support substrate, the scintillator layer, and the intermediate layer.

9. 9. The scintillator panel according to claim 1, further comprising an adhesive layer disposed on the side of the scintillator layer opposite to the support substrate.

10. 10. The scintillator panel according to claim 1, wherein the thickness of the supporting substrate is 0.2T or more, where T is the thickness of the scintillator layer.

11. A scintillator panel according to any one of claims 1 to 10; a sensor panel having a light receiving surface, The scintillator panel is disposed on the light receiving surface with the scintillator layer positioned on the sensor panel side of the support substrate.

12. A flexible supporting substrate; a scintillator layer including a plurality of columnar crystals; an intermediate layer disposed between the support substrate and the scintillator layer, the plurality of columnar crystals include a plurality of first ends on the support substrate side and a plurality of second ends on the opposite side to the support substrate, Each of the plurality of first ends is tapered toward the support substrate, Each of the plurality of second ends has an end surface along a plane, a portion of the intermediate layer disposed in at least a region between the plurality of first ends, a first step of forming the scintillator layer on an auxiliary substrate by vapor deposition; a second step of forming the intermediate layer on the scintillator layer after the first step, such that a portion of the intermediate layer is disposed in the region between at least the first ends; a third step of forming the support substrate on the intermediate layer after the second step; a fourth step of removing the auxiliary substrate from the scintillator layer after the third step.

13. The method for manufacturing a scintillator panel according to claim 12, further comprising a fifth step, after the third step and before the fourth step, of cutting at least the scintillator layer, the intermediate layer, and the support substrate in the thickness direction of the support substrate.

14. 14. The method for manufacturing a scintillator panel according to claim 13, wherein in the fifth step, the auxiliary substrate is cut together with the scintillator layer, the intermediate layer, and the support substrate in a thickness direction of the support substrate.

15. The method for manufacturing a scintillator panel according to any one of claims 12 to 14, further comprising, after the fourth step, a sixth step of cutting the scintillator layer, the intermediate layer, and the support substrate in a thickness direction of the support substrate.

16. A method for manufacturing a radiation detector according to claim 11, comprising the steps of: a first step of providing the scintillator panel and the sensor panel; a second step, after the first step, of placing the scintillator panel on the light receiving surface so that the support substrate is located on an opposite side of the scintillator layer from the sensor panel.

Citation Information

Patent Citations

  • Scintillator panel

    JP2008209124A

  • Radiation image detector and manufacturing method of the same

    JP2012173276A

  • Radiation detection device, manufacturing method thereof, and radiation detection system

    JP2013029384A

  • Radiation detection panel and radiation image detector

    JP2014032170A

  • Radiation imaging device and radiation inspection device

    JP2015148446A