Capacitor components

Abstract

To provide a capacitor component having improved reliability.SOLUTION: A capacitor component 100 includes: a body 110 including a dielectric layer 11 and internal electrode layers 121 and 122; and external electrodes 130 and 140 disposed on the body and respectively coupled to the internal electrode layers. The dielectric layer includes dielectric crystal grains, at least a portion of the dielectric crystal grains has core-shell structure. The shell includes a rare-earth element having an average concentration of more than 0.5 at%.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] This invention relates to a capacitor component. [Background technology]

[0002] MLCCs, a type of capacitor component, are important chip components used in industries such as communications, computers, home appliances, and automobiles due to their advantages of being small yet guaranteeing high capacitance and being easy to mount. In particular, they are core passive elements used in various electrical, electronic, and information communication devices such as mobile phones, computers, and digital TVs.

[0003] In recent years, with the miniaturization and increased performance of electronic devices, MLCCs have also tended to become smaller and more high-capacitance. This trend has increased the importance of ensuring high reliability in capacitor components. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Korean Published Patent No. 2021-0071496 [Overview of the project] [Problems that the invention aims to solve]

[0005] One of the objectives of the present invention is to provide a capacitor component that can improve reliability. [Means for solving the problem]

[0006] One aspect of the present invention provides a capacitor component comprising a body including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer, wherein the dielectric layer includes dielectric grains, at least a portion of the dielectric grains having a core-shell structure, and the shell contains a rare earth element at an average concentration of more than 0.5 at%. [Effects of the Invention]

[0007] According to one embodiment of the present invention, the reliability of capacitor components can be improved. [Brief explanation of the drawing]

[0008] [Figure 1] This diagram schematically shows a capacitor component according to one embodiment of the present invention. [Figure 2] This figure schematically shows a cross-section along the line I-I' in Figure 1. [Figure 3] This is a TEM-EDS mapping image of region A in Figure 2. [Figure 4] This is a TEM-EDS mapping image showing the concentration (at%) of dysprosium (Dy) in region A of Figure 2. [Figure 5] This diagram schematically shows the microstructure of the dielectric layer. [Figure 6] This graph shows the breakdown voltage (BDV) for Comparative Example 1, Comparative Example 2, and the experimental example. [Figure 7a] This graph shows the Step-IR evaluation results for Comparative Example 1. [Figure 7b] This graph shows the Step-IR evaluation results for Comparative Example 2. [Figure 7c] This graph shows the Step-IR evaluation results for the experimental example. [Modes for carrying out the invention]

[0009] Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. However, embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, embodiments of the present invention are provided to give a more complete explanation of the present invention to a person with average skill in the art.

[0010] The shape, size, etc. of the elements in the drawings can be exaggerated for a clearer explanation. For components with the same function within the scope of the same concept shown in the drawings of each embodiment, the same reference numerals are used for explanation. Further, throughout the specification, stating that a certain component "includes" means that, unless otherwise stated to the contrary, it does not exclude other components, but can further include other components.

[0011] Also, throughout the specification, the phrase "formed on" should be appropriately interpreted according to the context, meaning not only directly formed in contact, but also possibly including other components therebetween. And, for the purpose of clearly explaining the present invention in the drawings, parts not related to the explanation are omitted, the thickness is enlarged to clearly show multiple layers and regions, and similar drawing reference numerals are assigned to similar parts throughout the specification.

[0012] FIG. 1 is a diagram schematically showing a capacitor component according to an embodiment of the present invention, FIG. 2 is a diagram schematically showing a cross-section along the line I-I' of FIG. 1, FIG. 3 is a TEM-EDS mapping image of the A region in FIG. 2, FIG. 4 is a TEM-EDS mapping image showing the concentration (at%) of dysprosium (Dy) in the A region of FIG. 2, and FIG. 5 is a diagram schematically showing the microstructure of the dielectric layer.

[0013] A capacitor component 100 according to an embodiment of the present invention includes a main body including a dielectric layer 111 and internal electrode layers 121, 122, and external electrodes 130, 140 disposed on the main body 110 and connected to the internal electrode layers 121, 122. The dielectric layer 111 includes dielectric crystallites 11, 11'. At least a part 11' of the dielectric crystallites 11, 11' has a core 11b'-shell 11a' structure, and the shell 11a' contains a rare earth element with an average concentration exceeding 0.5 at%.

[0014] The main body 110 may have a dielectric layer 111 and internal electrode layers 121 and 122 laminated alternately. There is no particular limitation on the specific shape of the main body 110, but as shown in the figure, the main body 110 can be formed in a hexahedron shape or a shape similar thereto. Due to the shrinkage of the ceramic powder contained in the main body 110 during the firing process, the main body 110 does not have a hexahedron shape with perfect straight lines, but can have a substantially hexahedron shape.

[0015] The main body 110 has a first surface 1 and a second surface 2 facing each other in a first direction (T direction), a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in a second direction (L direction), and a fifth surface 5 and a sixth surface 6 connected to the first surface 1 and the second surface 2, connected to the third surface 3 and the fourth surface 4, and facing each other in a third direction (W direction).

[0016] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundary between adjacent dielectric layers 111 can be integrated so that it is difficult to confirm without using a scanning electron microscope (SEM).

[0017] On the other hand, the dielectric layer 111 can mainly contain a substance having a perovskite structure represented by ABO3. For example, the dielectric layer 111 can mainly contain one or more of BaTiO3, (Ba,Ca)(Ti,Ca)O3, (Ba,Ca)(Ti,Zr)O3, Ba(Ti,Zr)O3, and (Ba,Ca)(Ti,Sn)O3.

[0018] More specifically, the dielectric layer 111 is BaTiO3, (Ba 1-x Ca x )(Ti 1-y Ca y )O3 (where x is 0≤x≤0.3 and y is 0≤y≤0.1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (where x is 0≤x≤0.3 and y is 0≤y≤0.5), Ba(Ti 1-y Zry )O3 (where 0 < y ≤ 0.5) and (Ba 1-x Ca x )(Ti 1-y Sn y )O3 (where 0 ≤ x ≤ 0.3 and 0 ≤ y ≤ 0.1) can include one or more selected from the group consisting of as a main component.

[0019] The main body 110 includes a capacitance forming portion that is disposed inside the main body 110 and in which a first internal electrode layer 121 and a second internal electrode layer 122 are disposed so as to face each other with a dielectric layer 111 interposed therebetween, and a capacitance is formed, and a cover portion 113 formed on the upper and lower portions of the capacitance forming portion.

[0020] The capacitance forming portion is a portion that contributes to the formation of the capacitance of the capacitor, and can be formed by repeatedly laminating a plurality of first internal electrode layers 121 and second internal electrode layers 122 with a dielectric layer 111 interposed therebetween.

[0021] The cover portion 113 can be formed by laminating a single dielectric layer or two or more dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming portion, and can basically play a role of preventing damage to the internal electrode layer due to physical or chemical stress.

[0022] The cover portion 113 does not include an internal electrode layer and can include the same material as the dielectric layer 111. That is, the cover portion 113 can include a ceramic material, for example, a barium titanate (BaTiO3)-based ceramic material.

[0023] [[ID=Z9]]Also, a margin portion can be disposed on the side surface of the capacitance forming portion. The margin portion can be disposed on both side surfaces in the width direction of the ceramic main body 110. The margin portion can basically play a role of preventing damage to the internal electrode layer due to physical or chemical stress.

[0024] The margin portion may be formed by applying a conductive paste to the ceramic green sheet, except for the area where the margin portion is formed, to form the internal electrode layer. In addition, in order to suppress the step caused by the internal electrode layers 121 and 122, after lamination the internal electrode layer is cut so that it is exposed on the fifth surface 5 and sixth surface 6 of the main body, and then a single dielectric layer or two or more dielectric layers can be laminated in the width direction on both sides of the capacitance forming portion to form the margin portion.

[0025] The internal electrode layers 121 and 122 are stacked alternately with the dielectric layer 111. The internal electrode layers 121 and 122 may include a first internal electrode layer 121 and a second internal electrode layer 122. The first internal electrode layer 121 and the second internal electrode layer 122 are arranged alternately facing each other with the dielectric layer 111 constituting the main body 110 in between, and can be exposed on the third surface 3 and the fourth surface 4 of the main body 110, respectively.

[0026] Referring to Figure 2, the first internal electrode layer 121 can be separated from the fourth surface 4 and exposed via the third surface 3, and the second internal electrode layer 122 can be separated from the third surface 3 and exposed via the fourth surface 4. In this case, the first internal electrode layer 121 and the second internal electrode layer 122 may be electrically isolated from each other by a dielectric layer 111 placed in between.

[0027] The main body 110 can be formed by alternately stacking ceramic green sheets printed with a first internal electrode layer 121 and ceramic green sheets printed with a second internal electrode layer 122, and then firing them.

[0028] The materials used to form the internal electrode layers 121 and 122 are not particularly limited, and any material with excellent electrical conductivity can be used. For example, the internal electrode layers 121 and 122 can be formed by printing a conductive paste for internal electrode layers containing one or more of the following materials onto a ceramic green sheet: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The printing method for the conductive paste for internal electrode layers can be screen printing or gravure printing, but the present invention is not limited thereto.

[0029] On the other hand, in order to achieve miniaturization and high capacitance of multilayer ceramic capacitors, the thickness of the dielectric layer and internal electrode layer must be reduced and the number of layers increased. However, as the thickness of the dielectric layer and internal electrode layer decreases, reliability decreases, and characteristics such as insulation resistance and breakdown voltage may deteriorate. Therefore, the thinner the thickness of the dielectric layer and internal electrode layer, the greater the reliability improvement effect according to the present invention can be.

[0030] In particular, when the average thickness of the internal electrode layers 121 and 122 and the average thickness of the dielectric layer 111 are 400 nm or less, the improvement effect of the high-temperature lifetime characteristics and TCC characteristics according to the present invention can be significantly enhanced.

[0031] The average thickness of the internal electrode layers 121 and 122 can be measured by scanning an image of a cross-section (LT section) taken from the center of the width direction W of the main body 110 using a scanning electron microscope (SEM). For example, the average thickness of the internal electrode layers 121 and 122 can be calculated by taking one internal electrode layer extracted from the above image as a reference, and then, using the point where the center line in the length direction and the center line in the thickness direction of the main body intersect, setting five points at equal intervals around the reference point (two to the left and two to the right), measuring the numerical value (dimension) at each point, and taking the arithmetic mean of these values. In other words, the average thickness of the internal electrode layers 121 and 122 can be determined from the average value of the values ​​(dimensions) of a total of 25 points, by measuring the values ​​(dimensions) of one point in the internal electrode layer where the center line in the length direction of the main body and the center line in the thickness direction of the main body intersect, and two points each at equal intervals (500 nm each) to the left and right of the one reference point.

[0032] The average thickness of the dielectric layer 111 can be said to be the average thickness of the dielectric layer 111 that is placed between the first internal electrode layer 121 and the second internal electrode layer 122.

[0033] Similar to the average thickness of the internal electrode layer, the average thickness of the dielectric layer 111 can also be measured by scanning an image of the longitudinal-thickness cross-section (LT cross-section) of the main body 110 with a scanning electron microscope (SEM). For example, the average thickness of the dielectric layer 111 can be calculated by taking one dielectric layer extracted from the above image as a reference, and then, using the point where the longitudinal center line and the thickness center line of the main body intersect, setting five equal-space points (two to the left and two to the right) around the reference point where the longitudinal center line and the thickness center line of the main body intersect, measuring the numerical value (dimension) at each point, and taking the arithmetic mean of these values. In other words, the average thickness of the dielectric layer 111 can be determined from the average value of the dimensions measured at a total of 25 points: one point in the dielectric layer where the central line in the length direction of the main body and the central line in the thickness direction intersect, and two points on each side that are equally spaced (500 nm each) to the left and right of the single reference point.

[0034] Referring to Figure 5, the dielectric layer 111 includes a plurality of dielectric crystal grains 11, 11', and grain boundaries 11c of the dielectric crystal grains 11, 11' are arranged therein. At least one of the plurality of dielectric crystal grains is a dielectric crystal grain 11' having a core-shell structure. The dielectric crystal grain 11' having a core-shell structure includes a shell 11a' that surrounds at least a part of the core 11b'.

[0035] Multilayer ceramic capacitors (MLCCs), a type of capacitor component, are trending towards higher capacitance and thinner layers. With these increased capacitance and thinner layers, ensuring the dielectric strength of the dielectric layer has become a major challenge in multilayer ceramic capacitors. Additionally, the deterioration of the dielectric's insulation resistance has led to an increase in the failure rate.

[0036] To address these problems, a method has been proposed to suppress the generation of oxygen vacancies and reduce their mobility by adding rare earth elements, such as Dy, Y, and Ho, thereby suppressing the electrons generated by the addition of transition metals.

[0037] Methods for adding additive elements to dielectrics include the crushing and dispersion of metal oxide particles with a size of tens to hundreds of nanometers (metal oxide particle dispersion method) and the dispersion of a sol containing the additive elements (sol dispersion method). However, both the metal oxide particle dispersion method and the sol dispersion method have technical limitations in producing slurries with a stable dispersion state of 10 nm or less. As a result, in dielectric grains with a conventional core-shell structure, there have been technical problems in achieving an average concentration of rare earth elements of 0.5 at% or more within the shell.

[0038] Therefore, in this invention, at least one of the multiple dielectric crystal grains has a core-shell structure, and the average concentration of rare earth elements contained in the shell is set to more than 0.5 at%. The rare earth elements basically form shell regions by substituting the A sites of the perovskite structure represented by ABO3 and reducing the concentration of oxygen depletion vacancies. Such shell regions act as barriers that prevent the flow of electrons at the grain boundaries of dielectric grains and can play a role in preventing leakage current. As a result, the concentration of rare earth elements in the shell regions can be increased, and the aforementioned effects can be improved.

[0039] Shell 11a' contains rare earth elements at an average concentration of more than 0.5 at%. Preferably, shell 11a' contains rare earth elements at an average concentration of 0.7 at% or more. If the average concentration of rare earth elements contained in shell 11a' is 0.5 at% or less, the reliability improvement effect according to the present invention may not be sufficient. In this case, the rare earth elements may include one or more elements selected from the group consisting of lanthanum (La), yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and ruthenium (Lu). As an example that is not limited thereto, the shell 11a' may contain dysprosium (Dy), but the scope of the present invention is not limited thereto.

[0040] Rare earth elements are either absent in core 11b' or present only in trace amounts. Because the concentration of rare earth elements changes abruptly at the boundary between core 11b' and shell 11a', core 11b' and shell 11a' can be easily distinguished and confirmed by TEM-EDS analysis.

[0041] The average concentration of rare earth elements in shell 11a' can be obtained, for example, by performing EDS (Energy Disperse X-Ray Spectrometer) line analysis on crystal grains having a core-shell structure using an electron microscope (TEM, Transmission Electron Microscope). Here, TEM-EDS line analysis can be performed on at least four or more lines spaced apart from each other in shell 11a', as shown in Figure 5, and the average concentration of rare earth elements in shell 11a' can be said to be the arithmetic mean obtained by dividing the analytical values ​​for each of the aforementioned lines by the number of lines.

[0042] The shell 11a' can be positioned to cover the entire surface of the core 11b'. However, the shell 11a' can be positioned in a manner that does not cover a portion of the surface of the core 11b'. In this case, the shell 11a' can be positioned to cover 90% or more of the core surface area. This is because if the shell 11a' is positioned to cover less than 90% of the core surface area, the reliability improvement effect according to the present invention may not be sufficient.

[0043] On the other hand, referring to Figure 5, the dielectric layer 111 may include dielectric crystal grains 11' that do not have a core-shell structure, in addition to dielectric crystal grains 11' that have a core-shell structure.

[0044] In this case, the number of dielectric crystal grains 11' having the core-shell structure among the multiple dielectric crystal grains 11 and 11' may be 50% or more. Here, the ratio of dielectric crystal grains having the core-shell structure may be measured from an image obtained by scanning a cross-section of the dielectric layer with a transmission electron microscope (TEM).

[0045] If the number of dielectric crystal grains having the above-described core-shell structure is less than 50% of the multiple dielectric crystal grains, the improvement effect on high-temperature lifetime characteristics and TCC characteristics may be insufficient.

[0046] On the other hand, there is no particular limit to the size of the dielectric crystal grains. For example, the average grain size of the dielectric crystal grains may be between 50 nm and 400 nm. If the average grain size is less than 50 nm, there is a risk that the expected effect will not be fully realized due to a decrease in dielectric constant and a decrease in grain growth rate, resulting in insufficient solid solution of the added elements. If it exceeds 400 nm, there is a risk that the capacitance change rate due to temperature and DC voltage will increase, and the reliability may decrease because the number of dielectric crystal grains per dielectric layer decreases.

[0047] The external electrodes 130 and 140 are positioned on the main body 110 and connected to the internal electrode layers 121 and 122. As shown in Figure 2, the device may include a first external electrode 130 and a second external electrode 140 positioned on the third surface 3 and fourth surface 4 of the main body 110, respectively, and connected to the first internal electrode layer 121 and the second internal electrode layer 122, respectively.

[0048] In this embodiment, a structure is described in which the capacitor component 100 has two external electrodes 130 and 140. However, the number and shape of the external electrodes 130 and 140 can be changed depending on the form of the internal electrode layers 121 and 122 or other purposes.

[0049] The external electrodes 130 and 140 may be formed using any material that has electrical conductivity, such as metal, and the specific material may be determined by considering electrical properties, structural stability, etc., and may also have a multilayer structure.

[0050] For example, the external electrodes 130 and 140 may include a first electrode layer 131 and 141 placed on the main body 110, and a second electrode layer 132 and 142 on which the first electrode layers 131 and 141 are formed.

[0051] More specific examples of the first electrode layers 131 and 141 include the fact that the first electrode layers 131 and 141 may be fired electrodes containing a conductive metal and glass, or resin-based electrodes containing a conductive metal and resin. Furthermore, the first electrode layers 131 and 141 may be formed in a manner in which a fired electrode and a resin-based electrode are sequentially formed on the main body 110. Also, the first electrode layers 131 and 141 may be formed by transferring a sheet containing a conductive metal onto the main body 110, or by transferring a sheet containing a conductive metal onto a fired electrode.

[0052] While any material with excellent electrical conductivity can be used as the conductive metal in the first electrode layers 131 and 141, it is not particularly limited. For example, the conductive metal may be one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0053] The second electrode layers 132 and 142 may be plating layers containing one or more of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof, and may be formed from multiple layers.

[0054] To give a more specific example for the second electrode layers 132 and 142, the second electrode layers 132 and 142 may be Ni-plated layers or Sn-plated layers, and may be in a configuration in which Ni-plated layers and Sn-plated layers are formed sequentially on the first electrode layers 131 and 141, or may be in a configuration in which Sn-plated layers, Ni-plated layers and Sn-plated layers are formed sequentially. Furthermore, the second electrode layers 132 and 142 may include multiple Ni-plated layers and / or multiple Sn-plated layers.

[0055] (Example of experiment) A ceramic body was fabricated such that at least a portion of the dielectric grains in the dielectric layer had a core-shell structure. Comparative Examples 1, 2, and 3 were prepared so that the average concentration (at%) of dysprosium (Dy) in the shell was 0.4 at%, 0.5 at%, and 0.85 at%, respectively.

[0056] Comparative Examples 1, 2, and the Experimental Example each produced a base material powder using the oxide additive method, the nitrate liquid-phase additive synthesis method, and the acetate method, respectively. Specifically, Comparative Example 1 produced a base material powder of a core-shell dielectric grain containing dysprosium (Dy) in the shell using the oxide additive method. Comparative Example 2 produced a first solution by adding dysprosium oxide and nitric acid to an ethanol solvent, a second solution by adding barium titanate powder and a dispersant to the first solution, and then produced a base material powder by displacement concentration. The Experimental Example produced a base material powder by adding a metal acetate containing dysprosium, a dispersant, and barium titanate powder together to an ethanol solvent and concentrating the mixture.

[0057] A dielectric green sheet was manufactured using such a base material powder, a conductive paste was printed onto the dielectric green sheet, and then multiple sheets were stacked to produce a laminate. This laminate was then sintered to produce a sintered body.

[0058] Comparative Examples 1 and 2 and the experimental example are identical in all other conditions except for the aforementioned base material manufacturing method and the average concentration of dysprosium within the dielectric grain shell of the core-shell structure of the sintered body.

[0059] Figure 6 is a graph showing the break-down voltage (BDV) for Comparative Example 1 (#1), Comparative Example 2 (#2), and Experimental Example (#3). For each of Comparative Examples 1 and 2 and Experimental Example, 20 samples were prepared and their break-down voltages (BDV) were evaluated. The BDV evaluation was performed while increasing the voltage from 10 mA to 1,100 V. Referring to Figure 6, it can be seen that the average BDV of Experimental Example (#3) is higher than that of Comparative Example 1 (#1) and Comparative Example 2 (#2).

[0060] Figures 7a, 7b, and 7c are graphs showing the Step-IR evaluation results for Comparative Example 1, Comparative Example 2, and the Experimental Example, respectively. Forty samples were prepared for each of Comparative Examples 1 and 2, and the Experimental Example, and Step-IR evaluation was performed. In the Step-IR evaluation, at a temperature of 105°C, the change in insulation resistance (IR) over time was measured for each sample while applying 1.5Vr (15V, 20V) for the first 12 hours, 2.0Vr (20V) for the next 12 hours, 2.5Vr (25V) for the next 12 hours, and 3.0Vr (30V) for the next 12 hours. Referring to Figures 7 to 9, it can be seen that the initial IR is relatively higher in the Experimental Example compared to Comparative Examples 1 and 2. Also, compared to Comparative Examples 1 and 2, it can be seen that the rate at which the IR decreases by two orders of magnitude or more during the first 12 hours is lower in the Experimental Example.

[0061] Although embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and it will be obvious to those with ordinary skill in the art that various modifications and variations are possible without departing from the technical matters of the present invention as described in the claims. [Explanation of symbols]

[0062] 100: Capacitor component 110: Main unit 111: Dielectric layer 121: First internal electrode layer 122: Second internal electrode layer 130: 1st external electrode 140: 2nd external electrode 130, 141: First electrode layer 140, 142: Second electrode layer 100: Capacitor component

Claims

1. A main body including a dielectric layer and an internal electrode layer, The body includes an external electrode arranged on the main body and connected to the internal electrode layer, The dielectric layer contains dielectric crystal grains (grains), At least a portion of the dielectric crystal grains have a core-shell structure, The aforementioned shell contains rare earth elements at an average concentration of 0.85 at% or more, making it a capacitor component.

2. The capacitor component according to claim 1, wherein the rare earth element is one or more of the following: lanthanum (La), yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and ruthenium (Lu).

3. The capacitor component according to claim 1 or 2, wherein the dielectric layer mainly comprises one or more of the following: BaTiO3, (Ba,Ca)(Ti,Ca)O3, (Ba,Ca)(Ti,Zr)O3, Ba(Ti,Zr)O3, and (Ba,Ca)(Ti,Sn)O3.

4. The capacitor component according to any one of claims 1 to 3, wherein the shell surrounds at least a portion of the surface of the core.

5. The capacitor component according to claim 4, wherein the shell covers 90% or more of the surface area of ​​the core.

6. The capacitor component according to any one of claims 1 to 5, wherein the average thickness of the dielectric layer is 400 nm or less.

7. The capacitor component according to claim 6, wherein the average thickness of the internal electrode layer is 400 nm or less.

8. The aforementioned external electrode is A capacitor component according to any one of claims 1 to 7, comprising a first electrode layer disposed on the main body and a second electrode layer disposed on the first electrode layer.

9. The capacitor component according to claim 8, wherein the second electrode layer comprises at least one of nickel (Ni) and tin (Sn).

10. A main body including a dielectric layer and an internal electrode layer, The body includes an external electrode arranged on the main body and connected to the internal electrode layer, The dielectric layer contains dielectric crystal grains (grains), A capacitor component wherein at least a portion of the dielectric crystal grains has a shell region containing dysprosium (Dy) at an average concentration of 0.85 at% or more.

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