Substrate processing equipment

Abstract

The present invention relates to a substrate processing apparatus including a chamber, a substrate support for supporting at least one substrate inside the chamber, a lower plate arranged above the substrate support, and an upper plate arranged above the lower plate, the upper plate including a first injection hole for providing a first gas and a second injection hole for providing a second gas, the lower plate including a first opening arranged below the first injection hole to pass the first gas provided from the first injection hole, and a second opening arranged below the second injection hole to pass the second gas provided from the second injection hole.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus that performs processing steps such as a vapor deposition step and an etching step on a substrate.

Background Art

[0002] Generally, in order to manufacture solar cells, semiconductor elements, flat panel displays, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. For this reason, processing steps for the substrate such as a vapor deposition step of depositing a thin film of a specific substance on the substrate, a photo process of selectively exposing the thin film using a photosensitive substance, and an etching step of removing the thin film of the selectively exposed portion to form a pattern are performed. Such processing steps for the substrate are performed by a substrate processing apparatus.

[0003] A substrate processing apparatus according to the prior art includes a substrate support unit that supports a substrate and a gas injection unit that injects gas toward the substrate support unit. The gas injection unit includes a plurality of openings for injecting gas. The gas is injected through the openings toward different portions of the substrate support.

[0004] Here, a substrate processing apparatus according to the prior art is embodied such that a first gas and a second gas are injected through each of the openings toward the substrate support unit. That is, in each of the openings, the first gas and the second gas are mixed. As a result, a substrate processing apparatus according to the prior art has a problem that particles such as vapor deposition on the gas injection unit are generated due to the reaction of the first gas and the second gas in each of the openings.

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present invention was devised to solve the problems described above, and aims to provide a substrate processing apparatus that can reduce the amount of particles generated during the process in which the first gas and the second gas are injected into the substrate support. [Means for solving the problem]

[0006] To solve the problems described above, the present invention may include the following configuration.

[0007] The substrate processing apparatus according to the present invention may include a chamber, a substrate support for supporting at least one substrate inside the chamber, a lower plate disposed above the substrate support, and an upper plate disposed above the lower plate. The upper plate may include a first injection hole for supplying a first gas and a second injection hole for supplying a second gas. The lower plate may include a first opening disposed below the first injection hole to allow the first gas supplied from the first injection hole to pass through, and a second opening disposed below the second injection hole to allow the second gas supplied from the second injection hole to pass through. Furthermore, the distance between the upper plate and the lower plate is smaller than the diameter of the first opening and the diameter of the second opening, respectively. It is possible. [Effects of the Invention]

[0008] According to the present invention, the following effects can be obtained.

[0009] The present invention is embodied such that a first gas flows through a first injection hole and a first opening, and a second gas flows through a second injection hole and a second opening. This reduces the amount of mixing between the first and second gases before they are injected into the substrate support, thereby reducing the particles generated by the reaction between the first and second gases before they are injected into the substrate support. Therefore, the present invention can not only improve the quality of the processed substrate but also contribute to reducing process costs by extending the cycle of cleaning operations required to remove particles. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic diagram of the substrate processing apparatus according to the present invention. [Figure 2] This is a schematic side cross-sectional view of the lower plate and the upper plate in the substrate processing apparatus according to the present invention. [Figure 3] This is an enlarged view showing a magnified portion of part A in Figure 2. [Figure 4] This is a schematic bottom view of the lower plate in the substrate processing apparatus according to the present invention. [Figure 5] This is an enlarged view showing a magnified portion of part B in Figure 4. [Figure 6] This is an enlarged view showing a magnified portion of part B in Figure 4. [Figure 7] This is an enlarged view showing a magnified portion of part B in Figure 4. [Modes for carrying out the invention]

[0011] Hereinafter, embodiments of the substrate processing apparatus according to the present invention will be described in detail with reference to the attached figures. Figure 2 may be a side cross-sectional view based on line II in Figure 4. In Figure 4, the opening formed in the lower plate is omitted.

[0012] Referring to Figure 1, the substrate processing apparatus 1 according to the present invention performs processing steps on a substrate (S). The substrate (S) may be a silicon substrate, a glass substrate, a metal substrate, etc. The substrate processing apparatus 1 according to the present invention can perform a deposition step of depositing a thin film onto the substrate (S), an etching step of removing a portion of the thin film deposited on the substrate (S), and so on. The following description will be based on an embodiment in which the substrate processing apparatus 1 according to the present invention performs the deposition step, but it will be obvious to those skilled in the art to which the present invention belongs that embodiments in which the substrate processing apparatus 1 according to the present invention performs different processing steps, similar to the etching step, can be derived from this.

[0013] The substrate processing apparatus 1 according to the present invention may include a chamber 2, a substrate support section 3, and a gas injection section 4.

[0014] <Chamber> Referring to Figure 1, the chamber 2 provides a processing space 100. Processing steps such as a vapor deposition process and an etching process can be performed on the substrate (S) in the processing space 100. The processing space 100 can be located inside the chamber 2. An exhaust port (not shown) for exhausting gas from the processing space 100 can be connected to the chamber 2. The substrate support section 3 and the gas injection section 4 can be located inside the chamber 2.

[0015] <Substrate support section> Referring to Figure 1, the substrate support portion 3 supports the substrate (S). The substrate support portion 3 can support one substrate (S) or multiple substrates (S). When multiple substrates (S) are supported by the substrate support portion 3, processing steps can be performed on multiple substrates (S) at once. The substrate support portion 3 can be coupled to the chamber 2. The substrate support portion 3 can be placed inside the chamber 2.

[0016] <Gas injection unit> Referring to FIG. 1, the gas injection unit 4 injects gas toward the substrate support unit 3. The gas injection unit 4 can be disposed inside the chamber 2. The gas injection unit 4 can be disposed opposite to the substrate support unit 3. The gas injection unit 4 can be disposed above the substrate support unit 3 with respect to the vertical direction (Z-axis direction). The vertical direction (Z-axis direction) is an axial direction parallel to the direction in which the gas injection unit 4 and the substrate support unit 3 are separated from each other. The processing space 100 can be disposed between the gas injection unit 4 and the substrate support unit 3. The gas injection unit 4 can be coupled to a lid (not shown). The lid can be coupled to the chamber 2 so as to cover the upper portion of the chamber 2. The gas injection unit 4 can be connected to the gas storage unit 40. In this case, the gas injection unit 4 can inject the gas supplied from the gas storage unit 40 toward the substrate support unit 3.

[0017] The gas injection unit 4 can include a first gas flow path 4a and a second gas flow path 4b.

[0018] The first gas flow path 4a is for injecting a first gas. One side of the first gas flow path 4a can be connected to the gas storage unit 40 via a pipe, a hose, or the like. The other side of the first gas flow path 4a can communicate with the processing space 100. Thereby, the first gas supplied from the gas storage unit 40 can flow along the first gas flow path 4a and then be injected into the processing space 100 through the first gas flow path 4a. The first gas flow path 4a can function as a flow path for the first gas to flow and also as an injection port for injecting the first gas into the processing space 100.

[0019] The second gas flow path 4b is for injecting the second gas. The second gas and the first gas can be different gases from each other. For example, either one of the first gas and the second gas can be a source gas, and the remaining one of the first gas and the second gas can be a reactant gas. One side of the second gas flow path 4b can be connected to the gas storage unit 40 via a pipe, a hose, or the like. The other side of the second gas flow path 4b can communicate with the processing space 100. Thereby, the second gas supplied from the gas storage unit 40 can flow along the second gas flow path 4b and then be injected into the processing space 100 through the second gas flow path 4b. The second gas flow path 4b can function as a flow path for the second gas to flow and also as an injection port for injecting the second gas into the processing space 100.

[0020] The second gas flow path 4b and the first gas flow path 4a can be arranged to be spatially separated from each other. Thereby, the second gas supplied from the gas storage unit 40 to the second gas flow path 4b can be injected into the processing space 100 without passing through the first gas flow path 4a. The first gas supplied from the gas storage unit 40 to the first gas flow path 4a can be injected into the processing space 100 without passing through the second gas flow path 4b.

[0021] Referring to FIGS. 1 to 3, the gas injection unit 4 can include an upper plate 41 and a lower plate 42.

[0022] The upper plate 41 is positioned above the lower plate 42. The upper plate 41 and the lower plate 42 can be positioned spaced apart from each other along the vertical direction (Z-axis direction). A separation space 43 can be provided between the upper plate 41 and the lower plate 42. The upper plate 41 and the lower plate 42 can be positioned so that they are not electrically connected to each other via the separation space 43. Although not shown in the figure, an insulating member can also be provided in the separation space 43 to electrically insulate the upper plate 41 and the lower plate 42. The lower surface 41a of the upper plate 41 (shown in Figure 2) can be formed flat.

[0023] The upper plate 41 may include a first injection hole 411 and a second injection hole 412.

[0024] The first injection hole 411 is for supplying the first gas. The first injection hole 411 can supply the first gas in a downward direction from the upper side of the lower plate 42 toward the lower plate 42. In this case, the first injection hole 411 can also supply the first gas by injecting the first gas in the downward direction. The first injection hole 411 can be formed through the upper plate 41. The first injection hole 411 can be connected to the gas storage section 40 via a buffer space (BS, shown in Figure 2). The buffer space (BS) may be a space located above the upper plate 41. The buffer space (BS) may be located between the lid and the upper plate 41 with respect to the vertical direction (Z-axis direction). The first injection hole 411 and the buffer space (BS) may belong to the first gas flow path 4a. The first injection hole 411 can also supply the first gas flowing in from outside the chamber 2 toward the lower plate 42. The upper plate 41 may include a plurality of the first injection holes 411. The first injection holes 411 may be arranged spaced apart from each other.

[0025] The second injection port 412 is for supplying the second gas. The second injection port 412 can supply the second gas in the downward direction. In this case, the second injection port 412 can also supply the second gas by injecting the second gas in the downward direction. The second injection port 412 can be connected to the gas storage section 40 via a supply port (SH) (shown in Figure 2). The supply port (SH) can be formed inside the upper plate 41. The supply port (SH) can be realized by machining the inside of the upper plate 41 using a gun drill. The second injection port 412 and the supply port (SH) can belong to the second gas flow path 4b. The second injection port 412 can also supply the second gas that has flowed in from outside the chamber 2 to the lower plate 42. The upper plate 41 can include a plurality of the second injection ports 412. The second injection ports 412 can be arranged spaced apart from each other. In this case, multiple second injection holes 412 can be connected to the supply hole (SH). The second injection holes 412 can be connected to different parts of the supply hole (SH) at a distance from each other. Multiple supply holes (SH) can also be formed in the upper plate 41. Multiple second injection holes 412 can be connected to each of the supply holes (SH).

[0026] The lower plate 42 is positioned above the substrate support portion 3. The lower plate 42 can be positioned between the substrate support portion 3 and the upper plate 41 with respect to the vertical direction (Z-axis direction). The lower plate 42 can be positioned such that its upper surface 42a faces the lower surface 41a of the upper plate 41. The separation space 43 can be positioned between the upper surface 42a of the lower plate 42 and the lower surface 41a of the upper plate 41. In Figure 4, the lower plate 42 is shown formed in a rectangular shape, but it is not limited to this, and the lower plate 42 can be formed in other shapes such as a circular shape. The lower plate 42 and the upper plate 41 can be formed in substantially identical shapes.

[0027] The lower plate 42 may include a first opening 421 and a second opening 422.

[0028] The first opening 421 is for allowing the first gas to pass through. The first opening 421 can be formed by penetrating the lower plate 42. The first opening 421 can be located below the first injection hole 411. This allows the first gas supplied from the first injection hole 411 to pass through the first opening 421 and be injected toward the substrate support 3. The first opening 421 and the first injection hole 411 can belong to the first gas flow path 4a. In this case, the first gas supplied from the first injection hole 411 can also flow into the first opening 421 via the separation space 43 and be injected toward the substrate support 3 after passing through the first opening 421.

[0029] The second opening 422 is for allowing the second gas to pass through. The second opening 422 can be formed by penetrating the lower plate 42. The second opening 422 can be positioned at a distance from the first opening 421. The second opening 422 can be positioned below the second injection hole 412. This allows the second gas supplied from the second injection hole 412 to pass through the second opening 422 and be injected toward the substrate support 3. The second opening 422 and the second injection hole 412 can belong to the second gas flow path 4b. In this case, the second gas supplied from the second injection hole 412 can also flow into the second opening 422 via the separation space 43 and be injected toward the substrate support 3 after passing through the second opening 422.

[0030] Thus, the substrate processing apparatus 1 according to the present invention is configured to inject the first gas into the processing space 100 using the first opening 421 and the first injection hole 411, and to inject the second gas into the processing space 100 using the second opening 422 and the second injection hole 412. This allows the substrate processing apparatus 1 according to the present invention to reduce the amount of mixing between the first gas and the second gas before they are injected into the processing space 100. Therefore, the substrate processing apparatus 1 according to the present invention can reduce the amount of particles generated by the reaction between the first gas and the second gas before they are injected into the processing space 100. As a result, the substrate processing apparatus 1 according to the present invention can not only improve the quality of the substrate (S) after the processing step is completed, but also contribute to reducing process costs by extending the cycle of cleaning work that must be performed on the gas injection unit 4, etc., to remove particles.

[0031] Referring to Figures 1 to 3, the lower plate 42 can be connected to an RF (Radio Frequency) power supply so that the first gas is activated and the second gas is activated. In this case, by grounding the upper plate 41 and applying RF power to the lower plate 42, plasma can be generated. Therefore, the lower plate 42 can use the plasma to activate the first gas and the second gas.

[0032] Therefore, the substrate processing apparatus 1 according to the present invention can improve the film quality of the thin film deposited on the substrate (S) by implementing a mechanism in which the activated first gas and the activated second gas are mixed and react in the processing space 100. Furthermore, the substrate processing apparatus 1 according to the present invention can form the lower surface 41a of the upper plate 41 flat. As a result, compared with a comparative example equipped with a protruding electrode protruding from the lower surface 41a of the upper plate 41, the substrate processing apparatus 1 according to the present invention can eliminate the concentrated power consumption at the protruding electrode in the comparative example, thereby contributing to a reduction in process costs by reducing power consumption compared to the comparative example.

[0033] The lower plate 42 can be implemented such that plasma is generated in the first opening 421 and the second opening 422, respectively. Thus, the first gas can be activated by the plasma generated in the first opening 421 as it passes through the first opening 421, and then injected into the processing space 100. Similarly, the second gas can be activated by the plasma generated in the second opening 422 as it passes through the second opening 422, and then injected into the processing space 100.

[0034] Referring to Figures 1 to 3, in the substrate processing apparatus 1 according to the present invention, the distance 43D (shown in Figure 3) (hereinafter referred to as "distance 43D") between the upper plate 41 and the lower plate 42 can be made smaller than the diameter 421D (shown in Figure 3) of the first opening 421 and the diameter 422D (shown in Figure 3) of the second opening 422. Therefore, the substrate processing apparatus 1 according to the present invention can be made to block the generation of plasma between the upper plate 41 and the lower plate 42, while allowing the generation of plasma in the first opening 421 and the second opening 422, respectively. Therefore, the substrate processing apparatus 1 according to the present invention can be made to be made such that the first gas is activated in the first opening 421 and the second gas is activated in the second opening 422.

[0035] In this case, the separation gap 43D can be formed to a length that blocks the generation of plasma between the upper plate 41 and the lower plate 42. Alternatively, the separation gap 43D can be formed to a length that electrically insulates the upper plate 41 and the lower plate 42. For example, the separation gap 43D can be formed to be 1.5 mm or more and less than 2 mm. If the separation gap 43D is less than 1.5 mm, the upper plate 41 and the lower plate 42 may not be electrically insulated. If the separation gap 43D is 2 mm or more, plasma may be generated between the upper plate 41 and the lower plate 42. Taking this into consideration, the substrate processing apparatus 1 according to the present invention can be implemented so as to block the generation of plasma between the upper plate 41 and the lower plate 42 while electrically insulating the upper plate 41 and the lower plate 42 by forming the separation gap 43D to be 1.5 mm or more and less than 2 mm.

[0036] Referring to Figures 1 to 3, the first opening 421 can be formed with a diameter 421D that is larger than the separation distance 43D. In this case, the diameter 421D of the first opening 421 can be formed to a length that allows plasma generation in the first opening 421. For example, the diameter 421D of the first opening 421 can be formed to a length of 2 mm or more and 5 mm or less. The first opening 421 can be formed with a diameter 421D that is larger than the first injection hole 411. In this case, the diameter 411D of the first injection hole 411 (shown in Figure 3) can be formed to be smaller than the diameter 421D of the first opening 421. Therefore, the substrate processing apparatus 1 according to the present invention can be implemented so that plasma is concentrated in the first opening 421, thereby activating the first gas intensively in the first opening 421 and injecting it into the processing space 100.

[0037] Referring to Figures 1 to 3, the second opening 422 can be formed with a diameter 422D larger than the separation distance 43D. In this case, the diameter 422D of the second opening 422 can be formed to a length that allows plasma generation in the second opening 422. For example, the diameter 422D of the second opening 422 can be formed to a length of 2 mm or more and 5 mm or less. The second opening 422 can be formed with a diameter 422D larger than the second injection hole 412. In this case, the diameter 412D of the second injection hole 412 (shown in Figure 3) can be formed to be smaller than the diameter 422D of the second opening 422. Therefore, the substrate processing apparatus 1 according to the present invention can be implemented so that the second gas is concentratedly activated in the second opening 422 and injected into the processing space 100 by implementing the plasma generation concentrated in the second opening 422. On the other hand, the diameter 422D of the second opening 422 and the diameter 421D of the first opening 421 can be formed to be equal to each other.

[0038] Referring to Figures 1 to 7, the lower plate 42 can include multiple first openings 421 and multiple second openings 422.

[0039] The first openings 421 can be arranged spaced apart from each other. The number of first openings 421 on the lower plate 42 and the number of first injection holes 411 on the upper plate 41 may be the same. The first openings 421 can be positioned below each of the first injection holes 411. In this case, the first openings 421 and the first injection holes 411 can be arranged in a one-to-one correspondence.

[0040] The second openings 422 can be arranged to be spaced apart from each other. The number of second openings 422 on the lower plate 42 and the number of second injection holes 412 on the upper plate 41 can be the same. The second openings 422 can be located below each of the second injection holes 412. In this case, the second openings 422 and the second injection holes 412 can be arranged to correspond one-to-one.

[0041] Here, the substrate processing apparatus 1 according to the present invention can be implemented such that the first opening 421 and the second opening 422 are arranged in the following configuration. In this case, the first injection hole 411 and the second injection hole 412 are arranged above the first opening 421 and the second opening 422, respectively, and can be implemented in the same configuration as the configuration between the first opening 421 and the second opening 422. Therefore, the explanation of the configuration between the first injection hole 411 and the second injection hole 412 will be replaced by the explanation of the configuration between the first opening 421 and the second opening 422. On the other hand, the centers of the first opening 421 and the centers of the first injection holes 411 can be placed on the same line with respect to the vertical direction (Z-axis direction). The centers of the second opening 422 and the centers of the second injection holes 412 can be placed on the same line with respect to the vertical direction (Z-axis direction).

[0042] First, in Figures 5 and 6, hatching is applied to the lower plate 42 in order to distinguish it from the first opening 421, the second opening 422, and the lower plate 42. Hatching is not shown on the first opening 421 and the second opening 422. Also, in order to distinguish it from the first injection hole 411 and the second injection hole 412, hatching of different shapes is shown on the first injection hole 411 and the second injection hole 412, etc.

[0043] Next, as shown in Figure 5, the distance (D1) [hereinafter referred to as the "mixing distance (D1)"] between the first opening 421 and the second opening 422, which are arranged adjacent to each other, can be shorter than the distance (D2) [hereinafter referred to as the "first opening distance (D2)"] between the first openings 421 and the second openings 422 and the distance (D3) [hereinafter referred to as the "second opening distance (D3)"] between the second openings 422 and the second opening distance (D3). In other words, the mixing distance (D1) can be shorter than both the first opening distance (D2) and the second opening distance (D3).

[0044] Therefore, the substrate processing apparatus 1 according to the present invention can reduce the distance between the injection position of the first gas and the injection position of the second gas in the lower plate 42 toward the processing space 100. Therefore, the substrate processing apparatus 1 according to the present invention can improve the reactivity between the first gas and the second gas in the processing space 100, and thus further improve the quality of the substrate (S) after the processing step is completed.

[0045] On the other hand, the mixing interval (D1) can mean the straight-line distance connecting the center of the first opening 421 and the center of the second opening 422 in the first opening 421 and the second opening 422 which are arranged adjacent to each other. The first opening interval (D2) can mean the straight-line distance connecting the centers of two first openings 421 which are arranged adjacent to each other. The second opening interval (D3) can mean the straight-line distance connecting the centers of two second openings 422 which are arranged adjacent to each other.

[0046] Next, as shown in Figure 6, multiple first openings 421 and second openings 422 can be alternately arranged on the lower plate 42 along each of a plurality of first virtual lines (VL1). The first virtual line (VL1) is a virtual line parallel to the first axis direction (AX1 axis direction). The first virtual lines (VL1) can be spaced apart from each other along the second axis direction (AX2 axis direction) which is perpendicular to the first axis direction (AX1 axis direction).

[0047] Thus, by arranging multiple first openings 421 and second openings 422 alternately along each of the first virtual lines (VL1) in the order of first opening 421, second opening 422, first opening 421, second opening 422, the substrate processing apparatus 1 according to the present invention can shorten the distance between the injection position of the first gas and the injection position of the second gas along each of the first virtual lines (VL1). Therefore, the substrate processing apparatus 1 according to the present invention can improve the reactivity between the first gas and the second gas with respect to each of the first virtual lines (VL1). As a result, the substrate processing apparatus 1 according to the present invention can improve the uniformity of the processing steps on the substrate (S) with respect to the first axial direction (AX1 axial direction).

[0048] Next, as shown in Figure 6, multiple first openings 421 and second openings 422 can be alternately arranged on the lower plate 42 along each of a plurality of second virtual lines (VL2). The second virtual lines (VL2) are virtual lines parallel to the second axial direction (AX2 axial direction). The second virtual lines (VL2) can be spaced apart from each other along the first axial direction (AX1 axial direction).

[0049] In this way, by arranging multiple first openings 421 and second openings 422 alternately along each of the second virtual lines (VL2) in the order of first opening 421, second opening 422, first opening 421, second opening 422, the substrate processing apparatus 1 according to the present invention can shorten the distance between the injection position of the first gas and the injection position of the second gas along each of the second virtual lines (VL2). Therefore, the substrate processing apparatus 1 according to the present invention can improve the reactivity between the first gas and the second gas with respect to each of the second virtual lines (VL2). As a result, the substrate processing apparatus 1 according to the present invention can improve the uniformity of the processing steps on the substrate (S) with respect to the second axial direction (AX2 axial direction).

[0050] Next, as shown in Figure 7, multiple first openings 421 can be arranged on the lower plate 42 along each of the odd-numbered third virtual lines (VL31) among the multiple third virtual lines (VL3). Multiple second openings 422 can be arranged on the lower plate 42 along each of the even-numbered third virtual lines (VL32) among the third virtual lines (VL3). The third virtual line (VL3) is a virtual line parallel to the third axis direction (AX3 axis direction). The third axis direction (AX3 axis direction) is an axis direction located between the first axis direction (AX1 axis direction) and the second axis direction (AX2 axis direction). The third axis direction (AX3 axis direction) may be an axis direction separated from each other at an angle of 45 degrees from each of the first axis direction (AX1 axis direction) and the second axis direction (AX2 axis direction). The third virtual lines (VL3) can be arranged spaced apart from each other along the fourth axis direction (AX4 axis direction) which is perpendicular to the third axis direction (AX3 axis direction).

[0051] In this way, by arranging multiple first openings 421 along each of the odd-numbered third virtual lines (VL31) and multiple second openings 422 along the even-numbered third virtual lines (VL32), the substrate processing apparatus 1 according to the present invention can alternately arrange lines consisting of the first openings 421 and lines consisting of the second openings 422 with respect to the fourth axis direction (AX4 axis direction). Therefore, the substrate processing apparatus 1 according to the present invention can improve the uniformity of the processing steps on the substrate (S) with respect to the fourth axis direction (AX4 axis direction) by improving the reactivity between the first gas and the second gas with respect to the fourth axis direction (AX4 axis direction).

[0052] On the other hand, the first aperture 421 positioned along each of the odd-numbered third virtual lines (VL31) and the second aperture 422 positioned along each of the even-numbered third virtual lines (VL32) can be positioned offset from each other with respect to the third axis direction (AX3 axis direction). This allows the substrate processing apparatus 1 according to the present invention to further reduce the distance between the first aperture 421 and the second aperture 422.

[0053] Next, as shown in Figure 7, multiple first openings 421 can be arranged on the lower plate 42 along each of the odd-numbered fourth virtual lines (VL41) among the multiple fourth virtual lines (VL4). Multiple second openings 422 can be arranged on the lower plate 42 along each of the even-numbered fourth virtual lines (VL42) among the fourth virtual lines (VL4). The fourth virtual lines (VL4) are virtual lines parallel to the fourth axis direction (AX4 axis direction). The fourth virtual lines (VL4) can be arranged spaced apart from each other along the third axis direction (AX3 axis direction).

[0054] In this way, by arranging multiple first openings 421 along the odd-numbered fourth virtual lines (VL41) and multiple second openings 422 along the even-numbered fourth virtual lines (VL42), the substrate processing apparatus 1 according to the present invention can alternately arrange lines consisting of the first openings 421 and lines consisting of the second openings 422 with respect to the third axis direction (AX3 axis direction). Therefore, the substrate processing apparatus 1 according to the present invention can improve the uniformity of the processing steps on the substrate (S) with respect to the third axis direction (AX3 axis direction) by improving the reactivity between the first gas and the second gas with respect to the third axis direction (AX3 axis direction).

[0055] On the other hand, the first aperture 421 positioned along each of the odd-numbered fourth virtual lines (VL41) and the second aperture 422 positioned along each of the even-numbered fourth virtual lines (VL42) can be positioned offset from each other with respect to the fourth axis direction (AX4 axis direction). This allows the substrate processing apparatus 1 according to the present invention to further reduce the distance between the first aperture 421 and the second aperture 422.

[0056] As described above, in the substrate processing apparatus 1 according to the present invention, when considering the arrangement relationship with respect to any one of the first openings 421 formed in the lower plate 42, the first opening 421 can be positioned adjacent to the second opening 422 with respect to the first axial direction (AX1 axial direction) and the second axial direction (AX2 axial direction), respectively, and can be positioned adjacent to the first opening 421 with respect to the third axial direction (AX3 axial direction) and the fourth axial direction (AX4 axial direction), respectively. Furthermore, when considering the arrangement relationship with respect to any one of the second openings 422 formed in the lower plate 42, the second opening 422 can be positioned adjacent to the first opening 421 with respect to the first axial direction (AX1 axial direction) and the second axial direction (AX2 axial direction), respectively, and can be positioned adjacent to the second opening 422 with respect to the third axial direction (AX3 axial direction) and the fourth axial direction (AX4 axial direction), respectively. To summarize, the substrate processing apparatus 1 according to the present invention can be implemented in a mixed arrangement in which the first opening 421 and the second opening 422 are mixed, based on the first axial direction (AX1 axial direction) and the second axial direction (AX2 axial direction), respectively, and in a homogeneous arrangement consisting of only the first opening 421 or only the second opening 422, based on the third axial direction (AX3 axial direction) and the fourth axial direction (AX4 axial direction), respectively.

[0057] Similarly, when considering the arrangement relationship with respect to any one of the first injection holes 411 formed in the upper plate 41, the first injection hole 411 can be positioned adjacent to the second injection hole 412 with respect to the first axial direction (AX1 axial direction) and the second axial direction (AX2 axial direction), respectively, and adjacent to the first injection hole 411 with respect to the third axial direction (AX3 axial direction) and the fourth axial direction (AX4 axial direction), respectively. Furthermore, when considering the arrangement relationship with respect to any one of the second injection holes 412 formed in the upper plate 41, the second injection hole 412 can be positioned adjacent to the first injection hole 411 with respect to the first axial direction (AX1 axial direction) and the second axial direction (AX2 axial direction), respectively, and adjacent to the second injection hole 412 with respect to the third axial direction (AX3 axial direction) and the fourth axial direction (AX4 axial direction), respectively. To summarize, the substrate processing apparatus 1 according to the present invention can be implemented to form a mixed arrangement in which the first injection holes 411 and the second injection holes 412 are mixed, with respect to the first axial direction (AX1 axial direction) and the second axial direction (AX2 axial direction), respectively, and to form the same type of arrangement consisting only of the first injection holes 411 or only of the second injection holes 412, with respect to the third axial direction (AX3 axial direction) and the fourth axial direction (AX4 axial direction), respectively.

[0058] The present invention described above is not limited to the embodiments and accompanying figures, and it will be apparent to those with ordinary skill in the art to which the present invention pertains that various substitutions, modifications, and changes are possible without departing from the technical spirit of the present invention.

Claims

1. Chamber, A substrate support portion that supports at least one substrate inside the chamber, A lower plate positioned above the substrate support portion, and Includes a start plate positioned above the lower plate, The upper plate includes a first injection hole for supplying a first gas and a second injection hole for supplying a second gas. The lower plate includes a first opening positioned below the first injection hole to allow a first gas supplied from the first injection hole to pass through, and a second opening positioned below the second injection hole to allow a second gas supplied from the second injection hole to pass through. A substrate processing apparatus characterized in that the distance between the upper plate and the lower plate is smaller than the diameter of the first opening and the diameter of the second opening, respectively.

2. The upper plate is grounded, The substrate processing apparatus according to claim 1, characterized in that the lower plate is connected to an RF power supply such that the first gas is activated and the second gas is activated.

3. The diameter of the first aperture is formed to a length that allows plasma generation in the first aperture. The diameter of the second aperture is formed to a length that allows plasma generation in the second aperture. The substrate processing apparatus according to claim 1 or 2, characterized in that the distance between the upper plate and the lower plate is formed to a length that blocks the generation of plasma between the upper plate and the lower plate.

4. The first opening is formed with a larger diameter than the first injection hole, The substrate processing apparatus according to claim 1, characterized in that the second opening is formed with a larger diameter than the second injection hole.

5. The lower plate has multiple first openings and second openings arranged alternately along each of a plurality of first virtual lines parallel to the first axial direction. The substrate processing apparatus according to claim 1, characterized in that the first virtual lines are spaced apart from each other along a second axis perpendicular to the first axis.

6. The lower plate has multiple first and second openings arranged alternately along each of the multiple second virtual lines parallel to the second axial direction. The substrate processing apparatus according to claim 5, characterized in that the second virtual lines are spaced apart from each other along the first axial direction.

7. The lower plate has multiple first openings arranged along each of the odd-numbered third virtual lines among a plurality of third virtual lines parallel to the third axis direction between the first axis direction and the second axis direction, and multiple second openings arranged along each of the even-numbered third virtual lines. The substrate processing apparatus according to claim 5 or 6, characterized in that the third virtual line is spaced apart from each other along a fourth axis perpendicular to the third axis.

8. The substrate processing apparatus according to claim 7, characterized in that the first openings arranged along each of the odd-numbered third virtual lines and the second openings arranged along each of the even-numbered third virtual lines are positioned offset from each other with respect to the third axis direction.

9. The lower plate has multiple first openings arranged along each of the odd-numbered fourth virtual lines among the multiple fourth virtual lines parallel to the fourth axis, and multiple second openings arranged along each of the even-numbered fourth virtual lines. The substrate processing apparatus according to claim 7, characterized in that the fourth virtual line is spaced apart from each other along the third axial direction.

10. The lower plate includes multiple first openings and multiple second openings, The substrate processing apparatus according to claim 1, characterized in that the distance between the first opening and the second opening, which are arranged adjacent to each other, is shorter than the distance between the first openings and shorter than the distance between the second openings.

11. Either the first gas or the second gas is the source gas. The substrate processing apparatus according to claim 1, characterized in that the remaining one of the first gas and the second gas is a reactant gas.

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