Operation methods for optoelectronic modules and optoelectronic modules

Abstract

An optoelectronic module is disclosed, comprising a semiconductor component (10) configured to emit electromagnetic radiation, a distribution structure (20) comprising a plurality of distribution elements (210), at least one input waveguide (201), and a plurality of output waveguides (202), and a plurality of conversion structures (30). Electromagnetic radiation emitted from the semiconductor component (10) enters the distribution structure (20) through the input waveguide (201). The electromagnetic radiation exits the distribution structure (20) through the output waveguides (202). A conversion structure (30) is disposed downstream of each output waveguide (202). A method of operation of the optoelectronic module (1) is further disclosed.

Description

[Technical Field]

[0001] Optoelectronic modules and methods of operating optoelectronic modules are disclosed. Optoelectronic modules are configured, in particular, to generate electromagnetic radiation, such as light perceptible to the human eye. [Overview of the project] [Problems that the invention aims to solve]

[0002] One of the challenges to be addressed is identifying optoelectronic modules with multiple output waveguides that have particularly high brightness.

[0003] A further challenge to be addressed is identifying an operating method for an optoelectronic module that enables easy control of multiple output waveguides. [Means for solving the problem]

[0004] These problems are solved by the apparatus and method described in the independent claim. Advantageous and further embodiments of the apparatus are the subject of the dependent claims and will become further apparent from the following description and drawings.

[0005] According to at least one embodiment, an optoelectronic module comprises a semiconductor component configured to emit electromagnetic radiation. The electromagnetic radiation preferably has a spectral distribution in which the dominant wavelength is within the visible spectral range. Hereinafter, the dominant wavelength is the wavelength of the electromagnetic radiation at which the spectrum of the radiation has its global maximum value.

[0006] A semiconductor component comprises, for example, at least one semiconductor emitter. In particular, the semiconductor emitter comprises a first region of first conductivity, a second region of second conductivity, and an active region configured to emit electromagnetic radiation. Advantageously, the first conductivity is distinct from the second conductivity. For example, the first and second regions are each formed of a doped semiconductor material. In particular, the active region has a pn junction, a double heterostructure, a single quantum well structure (SQW), or a multi-quantum well structure (MQW) for synchrotron radiation generation. The semiconductor emitter here is, for example, a light-emitting diode, in particular a lighting fixture or laser diode.

[0007] According to at least one embodiment, the optoelectronic module comprises a distribution structure comprising a plurality of distribution elements, at least one input waveguide, and a plurality of output waveguides. The distribution structure has, for example, a planar waveguide structure. Preferably, the distribution elements, at least one input waveguide, and output waveguides are integrally integrated on a substrate. This enables a particularly miniaturized design and advantageously achieves low optical coupling loss.

[0008] In particular, the distribution structure is configured to distribute electromagnetic radiation from at least one input waveguide to a plurality of output waveguides in a predetermined intensity ratio. Thus, the electromagnetic radiation coupled within the distribution structure can be emitted from the output waveguides in a desired ratio. The distribution element is provided, for example, in the form of an optical switch. Preferably, each distribution element comprises an input section and at least two output sections. In particular, each distribution element influences the distribution of the radiation intensity of electromagnetic radiation incident through the input section to the output sections.

[0009] According to at least one embodiment, the optoelectronic module comprises a plurality of conversion structures. In particular, the conversion structure is configured to convert electromagnetic radiation of a first wavelength to electromagnetic radiation of a second wavelength different from the first wavelength. The conversion structure converts, for example, the incident electromagnetic radiation partially or completely. In particular, the conversion structure emits mixed radiation by converting a portion of the electromagnetic radiation incident on the conversion structure. Advantageously, the mixed radiation gives the observer a white impression.

[0010] According to at least one embodiment of the optoelectronic module, electromagnetic radiation emitted by a semiconductor component is incident on a distribution structure through an input waveguide. The input waveguide advantageously has a core region and a cladding region. The cladding region at least partially surrounds the core region. The core region advantageously has a higher refractive index than the cladding region.

[0011] According to at least one embodiment of the optoelectronic module, electromagnetic radiation is emitted from a distribution structure through an output waveguide. The desired distribution of electromagnetic radiation can be configured in the output waveguide. For example, electromagnetic radiation is emitted from each output waveguide in one emission direction. Preferably, the emission directions of all output waveguides are aligned parallel to each other.

[0012] According to at least one embodiment of the optoelectronic module, the conversion structure is located downstream of each output waveguide. By placing one conversion structure per output waveguide, the contrast ratio between adjacent conversion structures is particularly high.

[0013] According to at least one embodiment, the optoelectronic module is A semiconductor component configured to emit electromagnetic radiation, A distribution structure comprising multiple distribution elements, at least one input waveguide, and multiple output waveguides, It comprises multiple transformation structures, The electromagnetic radiation emitted by the semiconductor component is incident on the distribution structure through the input waveguide. The electromagnetic radiation is emitted from the distribution structure through the output waveguide. A conversion structure is located downstream of each output waveguide.

[0014] The optoelectronic modules described herein are based, in particular, on the following considerations: To manufacture a high-brightness pixelated light source, several individual semiconductor components can be arranged adjacent to each other in an array. Converter elements may be placed downstream of each semiconductor component to emit white light. However, in such a configuration, waste heat is generated in both the semiconductor components and the converter elements during operation, making effective cooling of the semiconductor components and converter elements more difficult. This may limit the maximum achievable brightness of individual semiconductor components. Furthermore, precisely arranging multiple semiconductor components as an array may be associated with increased manufacturing costs.

[0015] The optoelectronic module described here particularly utilizes the idea of ​​spatially separating the generation of electromagnetic radiation from its transformation. Furthermore, by using a distribution structure, only one semiconductor component is required to control multiple emission regions. The electromagnetic radiation generated within the semiconductor component is coupled to the distribution structure, where it is distributed to multiple output waveguides. Each output waveguide is followed by a transformation structure that transforms at least a portion of the electromagnetic radiation. The spatial separation between the semiconductor component and the transformation structure allows the two structures to be cooled separately. Therefore, advantageously, the semiconductor component and the transformation structure can operate at different operating temperatures. Moreover, multiple transformation structures can be controlled by a single semiconductor component. This advantageously avoids the time-consuming adjustment of multiple semiconductor components in an array.

[0016] According to at least one embodiment of the optoelectronic module, the distributing element is a passive wavelength-selective filter element. For example, the distributing element is designed as a Mach-Zehnder interferometer, a dielectric interference thin-film filter, a waveguide grating router, or a microring resonator. Advantageously, the passive distributing element does not require additional control. The distributing element is configured to select electromagnetic radiation according to its dominant wavelength. In particular, the distribution of the output characteristics of the distributing element can be set, for example, by an electric field that is constantly applied during operation in a beam splitter, or by a phase displacement that is constantly set in a Mach-Zehnder interferometer. This allows for, for example, compensation for variations in the manufacturing of the distributing element. Hereinafter, a distributing element having such static compensation during operation is considered a passive filter element because it does not require actively adjusting the control during operation.

[0017] According to at least one embodiment of the optoelectronic module, the distribution element has a passband with a bandwidth of up to 2 nm, preferably up to 1 nm. In particular, the distribution element has high radiative transmittance in the passband. For example, electromagnetic radiation outside the passband is reflected or absorbed by the distribution element. The low bandwidth allows for advantageous control of a large number of distribution elements using semiconductor components that emit bandwidth-limited electromagnetic radiation.

[0018] According to at least one embodiment of the optoelectronic module, a semiconductor component is configured to emit coherent radiation having a modulated main wavelength. By modulating the main wavelength, the distribution of electromagnetic radiation can be influenced by a wavelength-selective distribution structure. In particular, the semiconductor component comprises a laser component with a sampled grating and a distributed Bragg reflector (a sampled grating-distributed Bragg reflector (SG-DBR) laser). Alternatively, the semiconductor component is formed by a laser component having an external resonator.

[0019] According to at least one embodiment of the optoelectronic module, the main wavelength of the electromagnetic radiation emitted by the semiconductor component can be modulated over a bandwidth of 25 nm, preferably 50 nm, particularly preferably 100 nm, in a spectral range including a wavelength of 447 nm. Preferably, the semiconductor component emits coherent electromagnetic radiation. In particular, the semiconductor component emits electromagnetic radiation with a main wavelength between 390 nm and 480 nm.

[0020] According to at least one embodiment of the optoelectronic module, the main wavelength can be modulated at a frequency of at least 500 Hz, preferably at least 1 kHz, particularly preferably at least 2 kHz. A high modulation frequency can advantageously shorten the time span during which a specific main wavelength can be emitted. In particular, a high modulation frequency also increases the number of different main wavelengths that can be provided during a given display period. As a result, the number of controllable distribution elements and output waveguides can be increased.

[0021] As used herein, hereinafter, the display period refers to the period of time during which electromagnetic radiation with a desired intensity distribution is provided in the output waveguide. Advantageously, the display period is short enough that no impression of flicker is produced on a human observer. For example, the display period is at most 1 / 30 seconds, preferably at most 1 / 60 seconds, particularly preferably at most 1 / 100 seconds.

[0022] According to at least one embodiment of the optoelectronic module, the semiconductor component comprises at least two semiconductor emitters, the first semiconductor emitter being configured to emit electromagnetic radiation with a variable main wavelength in a first spectral range, and the second semiconductor emitter being configured to emit electromagnetic radiation with a variable main wavelength in a second spectral range. In particular, the first main wavelength is different from the second main wavelength. For example, the spectral ranges of the first electromagnetic radiation and the second electromagnetic radiation do not overlap. By using a plurality of semiconductor emitters, the semiconductor component can emit electromagnetic radiation with a wider bandwidth.

[0023] According to at least one embodiment of the optoelectronic module, one input waveguide is assigned to each semiconductor emitter. This is advantageous because it reduces the number of required distribution elements. For example, a first semiconductor emitter is assigned a first number of output waveguides, and a second semiconductor emitter is assigned a second number of output waveguides. Advantageously, the first dominant wavelength of the first semiconductor emitter is identical to the second dominant wavelength of the second semiconductor emitter.

[0024] According to at least one embodiment of the optoelectronic module, each output waveguide is assigned exactly one distributing element. Advantageously, as many distributing elements as there are output waveguides are required. In particular, each distributing element is configured to control exactly one output waveguide.

[0025] According to at least one embodiment of the optoelectronic module, the distribution element is an active and controllable coupling element. The active distribution element is advantageously controllable, in particular with precision. For example, the distribution element is designed as a controllable directional coupler, or as a controllable directional coupler with phase inversion. In particular, each distribution element is equipped with a Mach-Zehnder interferometer. Advantageously, the distribution element is designed as an electro-optically controllable component. In other words, the intensity distribution at the output of the distribution element can be adjusted by an electrical control signal. Specifically, control lines are assigned to each distribution element.

[0026] According to at least one embodiment of the optoelectronic module, the distribution element can be modulated at a frequency of at least 0.5 GHz, preferably 1 GHz, and particularly preferably 10 GHz. Modulation of the distribution element is defined herein below as a complete switching process. Particularly high modulation frequencies advantageously increase the number of controllable output waveguides within a given display period.

[0027] According to at least one embodiment of the optoelectronic module, the semiconductor component is configured to emit coherent radiation having a dominant wavelength in the blue spectral range. In particular, the dominant wavelength is between 450 nm and 475 nm. A dominant wavelength in the blue spectral range is particularly preferred for generating white mixed light.

[0028] According to at least one embodiment of the optoelectronic module, each conversion structure comprises an output coupling element. The output coupling element is, for example, an optical grating coupler. The grating coupler can efficiently extract electromagnetic radiation from the waveguide into the region.

[0029] According to at least one embodiment of the optoelectronic module, each conversion structure comprises a diffusion element. The diffusion element is preferably located downstream of the output coupling element. In particular, the diffusion element homogenizes the electromagnetic radiation emanating from the output coupling element. For example, the diffusion element has a number of small scattering centers. When parallel light rays strike different points on the diffusion element, they are distributed in different directions, thereby generating diffused light.

[0030] According to at least one embodiment of the optoelectronic module, an input coupling element is assigned to each input waveguide. The input coupling element is, for example, a grating coupler. In particular, the input coupling element can improve the coupling efficiency between the semiconductor component and the input waveguide.

[0031] According to at least one embodiment of the optoelectronic module, the semiconductor component is formed of a Group III / V compound semiconductor material. The Group III / V compound semiconductor material has at least one element from Group 3, such as In, Ga, Al, and B, and one element from Group 5, such as N, P, and As. In particular, the term “Group III / V compound semiconductor material” includes a group of binary, ternary, or quaternary compounds comprising at least one element from Group 3 and at least one element from Group 5, including, for example, nitride and phosphide compound semiconductors. Such binary, ternary, or quaternary compounds may also have, for example, one or more dopants and additional components. Preferably, at least the active region of the semiconductor component is formed of the Group III / V compound semiconductor material. Specifically, the semiconductor component also includes other materials, for example, in the form of plating and / or carrier materials.

[0032] Preferably, the semiconductor component is based on a phosphide compound semiconductor material. In this specification, "based on a phosphide compound semiconductor material" means that the semiconductor component or at least a portion thereof, particularly preferably at least the active region and / or the growth substrate wafer, is preferably Al n Ga m In 1-n-m P or As n Ga m In 1-n-m This means that it contains P (0 ≤ n ≤ 1, 0 ≤ m ≤ 1, and n + m ≤ 1). This material does not necessarily have to have a mathematically precise composition according to the above formula. Therefore, semiconductor components can contain additional components and may have one or more dopants. However, for simplicity, the above formula includes only the essential constituent elements of the crystal lattice (Al or As, Ga, In, P), and these constituent elements may be partially substituted by small amounts of other substances. For example, a semiconductor component may be formed from InGaAsP.

[0033] According to at least one embodiment of the optoelectronic module, the distribution structure is formed from one of the following materials: III / V compound semiconductor material, silicon-on-insulator (SOI), silicon dioxide, silicon nitride, indium phosphide, gallium arsenide, diamond, diamond-on-insulator (DOI), lithium niobate, aluminum oxide, aluminum nitride, and gallium nitride. Preferably, the distribution structure is formed from the same material as the semiconductor component. Advantageously, there is no refractive index difference between the semiconductor component and the distribution structure.

[0034] According to at least one embodiment, the optoelectronic module comprises at least 10, preferably at least 30, and particularly preferably at least 100 output waveguides. Increasing the number of output waveguides improves the achievable resolution of the optoelectronic module. For example, the optoelectronic module comprises up to 200 output waveguides.

[0035] The operation methods of the optoelectronic module are further disclosed. In particular, the optoelectronic module can be operated by the methods described herein. This means that all features disclosed with respect to the operation methods of the optoelectronic module are also disclosed with respect to the optoelectronic module, and vice versa.

[0036] According to at least one embodiment of the method of operating an optoelectronic module, the distributing element is provided as a passive wavelength-selective filter element. For example, the distributing element is designed as a Mach-Zehnder interferometer, a dielectric interference thin-film filter, a waveguide grating router, or a microring resonator. Advantageously, the passive distributing element does not require additional control. The distributing element selects electromagnetic radiation according to its dominant wavelength. In particular, the distributing element transmits electromagnetic radiation having a dominant wavelength within the passband and absorbs or reflects electromagnetic radiation in the spectral range outside the passband.

[0037] According to at least one embodiment of the operation method of an optoelectronic module, a semiconductor component emits electromagnetic radiation having various discrete dominant wavelengths. In particular, each discrete dominant wavelength corresponds to the passband of a distributing element. The dominant wavelength of the electromagnetic radiation determines which distributing element the electromagnetic radiation can be transmitted through. In other words, a distributing element is assigned to each dominant wavelength.

[0038] According to at least one embodiment of the method of operating an optoelectronic module, different dominant wavelengths are emitted for a time corresponding to the dominant wavelength during the display period. The emission of electromagnetic radiation of a specific dominant wavelength for a time corresponding to the dominant wavelength allows for a desired intensity distribution of electromagnetic radiation in the output waveguide.

[0039] According to at least one embodiment of the method of operating an optoelectronic module, the optical output power of the semiconductor component remains constant during the display period. This allows for particularly simple control of the semiconductor component.

[0040] According to at least one embodiment of the method of operating the optoelectronic module, different dominant wavelengths are output during a display period of the same duration in each case. Advantageously, the dominant wavelengths can be changed at a constant rate.

[0041] According to at least one embodiment of the operation method of an optoelectronic module, the optical output power of a semiconductor component is modulated during the display period in synchronization with the modulation of the dominant wavelength. Therefore, by modulating the output power of the semiconductor component, a desired intensity distribution in the output waveguide can be achieved.

[0042] According to at least one embodiment of the method of operating the optoelectronic module, the distribution element (210) is provided as an active and controllable coupling element. The active distribution element is advantageously controllable in particular with precision. For example, the distribution element is designed as a controllable directional coupler, or as a controllable directional coupler with phase inversion. In particular, each distribution element comprises a Mach-Zehnder interferometer. Advantageously, the distribution element is designed as an electro-optically controllable component. In other words, the intensity distribution at the output of the distribution element is set by an electrical control signal. In particular, control lines are assigned to each distribution element.

[0043] According to at least one embodiment of the method of operating an optoelectronic module, a semiconductor component emits electromagnetic radiation having a certain dominant wavelength. This allows for a particularly simple design of the semiconductor component.

[0044] According to at least one embodiment of the operation method of an optoelectronic module, the optical output power of the semiconductor component remains constant during the display period. This simplifies the control of the semiconductor component.

[0045] According to at least one embodiment of the operation method of the optoelectronic module, the distribution element acts as a variably modulated beam splitter in which the distribution is constant over the display period. In particular, the distribution element can distribute the optical power input to the distribution element to the output section. Maintaining a constant distribution over the display period reduces the minimum switching time requirement for the distribution element and simplifies control.

[0046] According to at least one embodiment of the operation method of the optoelectronic module, a distribution element acts as an optical switch and is switched multiple times during the display period. Hereinafter, the switch is understood to be a component that ideally has only two switching states. Thus, the distribution element can distribute all input electromagnetic radiation to either a first output or a second output. This simplifies the control of the distribution element.

[0047] According to at least one embodiment of the operation method of an optoelectronic module, the optical output power of a semiconductor component is modulated in synchronization with a distribution element during the display period. Modulation of the optical output power of the semiconductor component makes it possible to represent a desired intensity distribution in the output waveguide when an optical switch is used as a distribution element.

[0048] The optoelectronic modules described herein are particularly suitable for use as high-brightness pixelated light sources. They are especially suitable as automotive headlights.

[0049] Further advantages and favorable configurations, as well as further embodiments of the optoelectronic module, are derived from the following exemplary embodiments shown in relation to the drawings. [Brief explanation of the drawing]

[0050] [Figure 1] This is a schematic cross-sectional view of an optoelectronic module described herein, according to a first exemplary embodiment. [Figure 2] This is a schematic cross-sectional view of an optoelectronic module described herein, according to a second exemplary embodiment. [Figure 3] This is a schematic top view of an optoelectronic module described herein, according to a third exemplary embodiment. [Figure 4] This is a schematic top view of an optoelectronic module described herein, according to a fourth exemplary embodiment. [Figure 5] This is a schematic perspective view of the optoelectronic module described herein, according to a fifth exemplary embodiment. [Figure 6] A control concept for an optoelectronic module described herein, according to a first exemplary embodiment. [Figure 7] A control concept for the optoelectronic module described herein, according to a second exemplary embodiment. [Figure 8] This is a schematic cross-sectional view of a transformation structure described herein, according to a first exemplary embodiment. [Figure 9] This is a schematic cross-sectional view of a transformation structure described herein, according to a second exemplary embodiment. [Figure 10] This is a schematic cross-sectional view of a transformation structure described herein, according to a third exemplary embodiment. [Figure 11] This is a schematic cross-sectional view of a transformation structure described herein, according to a fourth exemplary embodiment. [Figure 12] This is a schematic cross-sectional view of an optoelectronic module described herein according to a sixth exemplary embodiment. [Figure 13A] This is a schematic top view of an optoelectronic module described herein, according to a seventh exemplary embodiment. [Figure 13B] This is a schematic cross-sectional view of an optoelectronic module described herein, according to a seventh exemplary embodiment. [Figure 14] This is a schematic top view of an optoelectronic module described herein, according to an eighth exemplary embodiment. [Figure 15] This is a schematic top view of an optoelectronic module described herein, according to a ninth exemplary embodiment. [Figure 16] This is a schematic cross-sectional view of an apparatus having a plurality of optoelectronic modules described herein, according to a tenth exemplary embodiment. [Figure 17]It is a control concept of the optoelectronic module described in this specification according to the third exemplary embodiment. [Figure 18] It is a control concept of the optoelectronic module described in this specification according to the fourth exemplary embodiment.

Mode for Carrying Out the Invention

[0051] Elements having the same, similar or analogous functions are denoted by the same reference numerals in the drawings. The ratios of the drawings and the elements shown in the drawings are handled without considering the scale. Rather, individual elements may be exaggerated and shown large in order to enhance visibility and / or comprehensibility.

[0052] FIG. 1 is a schematic cross-sectional view of an optoelectronic module 1 described in this specification according to the first exemplary embodiment. The optoelectronic module 1 includes a semiconductor component 10 configured to emit electromagnetic radiation. The electromagnetic radiation preferably has a spectral distribution having a main wavelength in the visible spectral range.

[0053] Specifically, the semiconductor component 10 is configured to emit coherent radiation having a tunable main wavelength λ1 to λ n In particular, the semiconductor component 10 includes a laser component having a sample grating and a distributed Bragg reflector (SG-DBR). Alternatively, the semiconductor component 10 is formed by a laser component having an external resonator.

[0054] The main wavelengths λ1 to λ of the electromagnetic radiation emitted by the semiconductor component 10 n can be modulated over a bandwidth of at least 25 nm, preferably at least 50 nm, particularly preferably at least 100 nm, in a spectral range including a wavelength of 447 nm. In particular, the semiconductor component 10 emits electromagnetic radiation having a main wavelength λ1 to λ between 390 nm and 480 nm. n

[0055] Furthermore, the main wavelengths λ1 to λ n It can be modulated at a frequency of at least 500 Hz, preferably at least 1 kHz, and particularly preferably at least 2 kHz. Higher modulation frequencies can advantageously shorten the time during which a particular dominant wavelength can be emitted. In particular, higher modulation frequencies also allow for different dominant wavelengths λ1 to λ that can be provided within a given display period TD. n Increase the number.

[0056] Furthermore, the optoelectronic module 1 comprises at least one distribution structure 20 having a plurality of passive and wavelength-selective distribution elements 210, at least one input waveguide 201, and a plurality of output waveguides 202. The distribution structure 20 has a planar waveguide structure. This allows for particularly miniaturized designs and advantageously achieves low optical coupling losses. The distribution structure 20 is configured to distribute electromagnetic radiation from at least one input waveguide 201 to the output waveguides 202 in a predetermined intensity ratio. Electromagnetic radiation emitted by the semiconductor component 10 enters the distribution structure 20 through the input waveguide 201. The electromagnetic radiation then exits the distribution structure 20 through the output waveguides 202. Each output waveguide 202 is assigned exactly one distribution element 210. Advantageously, as many distribution elements 210 as there are output waveguides 202 are required. Each distribution element 210 is configured to control exactly one output waveguide 202.

[0057] The distributing elements 210 are designed as Mach-Zehnder interferometers, dielectric interference thin-film filters, waveguide grating routers, or microring resonators. Advantageously, passive distributing elements 210 require no additional control. The distributing elements 210 are positioned at different main wavelengths λ1 to λ. n It is configured to select electromagnetic radiation according to the main wavelength λ1~λ nIt is assigned to one of the following. The distribution element 210 has a spectral passband with a bandwidth of up to 2 nm, preferably up to 1 nm. In particular, the distribution element 210 has high radiative transmittance in the passband. For example, electromagnetic radiation outside the passband is reflected or absorbed by the distribution element 210. The low bandwidth allows for advantageous control of a large number of distribution elements 210 using semiconductor components 10 that emit bandwidth-limited electromagnetic radiation.

[0058] Furthermore, the optoelectronic module 1 includes a plurality of conversion structures 30. The conversion structures 30 are located downstream of the distribution structure 20. The conversion structures 30 are configured to convert electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength different from the first wavelength. The conversion structures 30 result in, for example, partial or complete conversion of the incident electromagnetic radiation.

[0059] Each conversion structure 30 comprises an output coupling element 301, a diffusion element 302, and a conversion element 303. The output coupling element 301 is an optical grating coupler. The grating coupler can efficiently extract electromagnetic radiation from a waveguide to a certain region.

[0060] The diffusion element 302 is located downstream of the output coupling element 301. In particular, the diffusion element 302 homogenizes the electromagnetic radiation emitted from the output coupling element 301. For example, the diffusion element 302 has a number of small scattering centers. When parallel rays strike different points on the diffusion element 302, the parallel rays are distributed in different directions, thus generating diffused light.

[0061] The conversion element 303 comprises a conversion material. In particular, the conversion material has the form of a ceramic platelet. The diffusion element 302 is positioned between the conversion element 303 and the output coupling element 301.

[0062] The optical element 40 is located downstream of the conversion structure 30. The optical element 40 is radiatively transparent to electromagnetic radiation emitted from the conversion structure 30. For example, the optical element is a projection lens.

[0063] Figure 2 shows a schematic cross-sectional view of the optoelectronic module 1 described herein according to a second exemplary embodiment. The optoelectronic module 1 comprises a semiconductor component 10 configured to emit electromagnetic radiation. The semiconductor component 10 is configured to emit coherent radiation having a dominant wavelength in the blue spectral range. In particular, the dominant wavelength is 440 nm or greater and 475 nm or less. Preferably, the dominant wavelength is 465 nm or less.

[0064] Furthermore, the optoelectronic module 1 has a distribution structure 20 having a plurality of distribution elements 210, at least one input waveguide 201, and a plurality of output waveguides 202. The distribution structure 20 has a planar waveguide structure. This allows for a particularly miniaturized design and advantageously achieves low optical coupling loss. The distribution structure 20 is configured to distribute electromagnetic radiation from at least one input waveguide 201 to the output waveguides 202 in a predetermined intensity ratio. Electromagnetic radiation emitted by the semiconductor component 10 enters the distribution structure 20 through the input waveguide 201. The electromagnetic radiation then exits the distribution structure 20 through the output waveguides 202.

[0065] The distribution element 210 is an active and controllable coupling element. The active distribution element 210 is advantageously controllable with particular precision. For example, the distribution element 210 can be designed as a controllable directional coupler, or as a controllable directional coupler with phase inversion. A controllable directional coupler with phase inversion has an advantageous tolerance for manufacturing variations.

[0066] In particular, each distribution element 210 is equipped with a Mach-Zehnder interferometer. Advantageously, the distribution elements 210 are designed as electro-optically controllable components. In other words, the intensity distribution at the output of the distribution elements 210 can be adjusted by an electrical control signal.

[0067] A control line 211 is assigned to each distribution element 210. The optoelectronic module 1 further includes a control device 212 connected to the control line 211. Through the control line 211, each distribution element 210 can be controlled by the control device 212 independently of the other distribution elements 210. The control device can set the distribution ratio of each distribution element independently of each other by applying an appropriate potential.

[0068] The distribution element 210 can be modulated at a frequency of at least 0.5 GHz, preferably 1 GHz, and particularly preferably 10 GHz. Modulation of the distribution element 210 is defined herein as a complete switching process, i.e., a complete switching from the first output to the second output of the distribution element. Particularly high modulation frequencies can advantageously increase the number of controllable output waveguides 202 within a given display period TD.

[0069] Furthermore, the optoelectronic module 1 comprises a plurality of conversion structures 30. The conversion structures 30 are located downstream of the distribution structure 20. The conversion structures 30 are configured to convert electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength different from the first wavelength. The conversion structures 30 result in, for example, a partial or complete conversion of the incident electromagnetic radiation. Advantageously, the dominant wavelength of the semiconductor component 10 is selected to function as an efficient pump wavelength for the conversion structures 30.

[0070] Each conversion structure 30 comprises an output coupling element 301, a diffusion element 302, and a conversion element 303. The output coupling element 301 is an optical grating coupler. The grating coupler can efficiently extract electromagnetic radiation from a waveguide to a certain region.

[0071] The diffusion element 302 is located downstream of the output coupling element 301. In particular, the diffusion element 302 homogenizes the electromagnetic radiation emitted from the output coupling element 301. For example, the diffusion element 302 has a number of small scattering centers. When parallel rays strike different points on the diffusion element 302, the parallel rays are distributed in different directions, thus generating diffused light.

[0072] The conversion element 303 comprises a conversion material. In particular, the conversion material has the form of a ceramic platelet. The diffusion element 302 is positioned between the conversion element 303 and the output coupling element 301.

[0073] The optical element 40 is located downstream of the conversion structure 30. The optical element 40 is radiatively transparent to electromagnetic radiation emitted from the conversion structure 30. For example, the optical element is a projection lens.

[0074] Figure 3 shows a schematic top view of the optoelectronic module 1 described herein according to a third exemplary embodiment. The third exemplary embodiment essentially corresponds to the second exemplary embodiment shown in Figure 2. The distribution structure 20, the conversion structure 30, and the input coupling element 2011 are arranged on a common carrier 60. The carrier 60 is formed of, for example, one of the following materials: III / V compound semiconductor materials, silicon-on-insulator (SOI), silicon dioxide, silicon nitride, indium phosphide, gallium arsenide, diamond, diamond-on-insulator (DOI), lithium niobate, aluminum oxide, aluminum nitride, and gallium nitride.

[0075] The input coupling element 2011 is assigned to the input waveguide 201. The input coupling element 2011 is designed as a grid coupler. The semiconductor component 10 is optically connected to the input coupling element 2011 via the optical waveguide 50. In other words, electromagnetic radiation from the semiconductor component 10 first enters the optical waveguide 50 and is then coupled from the optical waveguide 50 into the input waveguide 201 via the input coupling element 2011. In particular, the input coupling element 2011 can improve the coupling efficiency between the semiconductor component 10 and the input waveguide 201.

[0076] Figure 4 shows a schematic top view of the optoelectronic module 1 described herein according to a fourth exemplary embodiment. The fourth exemplary embodiment essentially corresponds to the third exemplary embodiment shown in Figure 3. In contrast to the third exemplary embodiment, the semiconductor component 10 is arranged on the carrier 60. This makes it possible to provide a particularly compact optoelectronic module 1.

[0077] Figure 5 shows a schematic perspective cross-sectional view of the optoelectronic module 1 described herein according to a fifth exemplary embodiment. The fifth exemplary embodiment essentially corresponds to the third exemplary embodiment shown in Figure 3. Furthermore, a heat sink 70 is located on the rear side of the carrier 60. The heat sink 70 allows for efficient dissipation of heat from the conversion structure 30. The heat sink 70 is formed of a material having particularly high thermal conductivity, such as metal or ceramic.

[0078] Furthermore, multiple optical elements 40 are positioned downstream of the conversion structure 30. The optical elements 40 are designed for beam shaping. The optical elements are formed from polymers with particularly high radiation transmission, such as polymethyl methacrylate (PMMA) or glass. Advantageously, the optical elements 40 cause collimation of electromagnetic radiation emitted from the conversion structure 30.

[0079] Figure 6 shows a control concept of the optoelectronic module 1 described herein according to a first exemplary embodiment. The optoelectronic module 1, which has a semiconductor component 10 and a distribution structure 20, is controlled. The semiconductor component 10 emits electromagnetic radiation having a constant dominant wavelength in the visible spectral range. The distribution structure 20 comprises a plurality of active and controllable distribution elements 210. Each distribution element 210 has an input section and two output sections. The output sections of the distribution elements 210 are assigned unique symbols A1, A2, B1, B2, B3, and B4.

[0080] The control concept shows the process of controlling all output sections A1, A2, B1, B2, B3, and B4 of the distribution element 210 and the optical output power of the semiconductor component 10 over the indicated period TD.

[0081] The display period TD indicates the duration for which electromagnetic radiation with a desired intensity distribution is provided in the output waveguide 202. Advantageously, the display period TD is short enough that it does not create a flashing impression to a human observer. For example, the display period TD is at most 1 / 30 second, preferably at most 1 / 60 second, and particularly preferably at most 1 / 100 second.

[0082] The distribution element 210 acts as an optical switch. The distribution element 210 is switched multiple times during the display period TD. A value of "1" means that this output section is active and electromagnetic radiation is output from this output section. A value of "0" means that this output section is not active and electromagnetic radiation is not output from this output section. At the first time point within the display period TD, the output sections A1 and B1 of the distribution element 210 are active. Therefore, electromagnetic radiation is emitted from the uppermost output waveguide 202 and discharged by the uppermost conversion structure 30. The distribution element 210 is modulated at a frequency of at least 0.5 GHz, preferably at least 1 GHz, and more preferably at least 10 GHz.

[0083] The optical output power of the semiconductor component 10 is modulated in synchronization with the distribution element 210 during the display period TD. In this way, it is possible to illuminate each output waveguide 202 with a desired intensity distribution by selective control of the distribution element 210.

[0084] Figure 7 shows a control concept of the optoelectronic module 1 described herein according to a second exemplary embodiment. The structure of the electronic module 1 essentially corresponds to the controlled optoelectronic module 1 shown in Figure 6. In contrast to the control concept shown in Figure 6, the optical output power of the semiconductor component 10 is constant over the indicated period TD. The distribution element 210 functions as a variably modulated beam splitter, and its distribution is constant over the indicated period TD.

[0085] The first distribution element 210, having output sections A1 and A2, is controlled so that 50% of the irradiated intensity is distributed to output section A1 and 50% of the irradiated intensity is distributed to output section A2. In the downstream distribution element having output sections B1 and B2, 34% of the radiated intensity is distributed to output section B1 and the remaining 66% of the radiated intensity is distributed to output section B2. This results in a desired intensity distribution in the output waveguide 202.

[0086] Therefore, multiple switching operations of the distribution element 210 within the display period TD can be advantageously eliminated. Furthermore, modulation of the optical output power of the semiconductor component 10 becomes unnecessary. The semiconductor component 10 is in CW mode.

[0087] Furthermore, the output waveguide 202 can also be provided in the distribution structure 20 as an optical absorber. This allows excess optical power to be absorbed by the optical absorber.

[0088] Figure 8 shows a schematic cross-sectional view of a conversion structure 30 described herein according to a first exemplary embodiment. The conversion structure 30 comprises an output coupling element 301, a diffusion element 302, and a conversion element 303. The output coupling element 301 is, for example, an optical grating coupler. A grating coupler for a photonic integrated circuit can advantageously increase the efficiency of extracting electromagnetic radiation from the waveguide into the range. The output coupling element 301 has a structure having a plurality of protrusions 3010 and recesses 3011 on the side facing the diffusion element 302.

[0089] The diffusion element 302 is positioned between the output coupling element 301 and the conversion element 303. The diffusion element homogenizes the electromagnetic radiation emitted from the output coupling element 301. The diffusion element 302 has multiple scattering centers. If parallel light rays strike different points on the diffusion element 302, they are distributed in different directions, thus generating diffused light.

[0090] The conversion element 303 includes a conversion material. In particular, the conversion material has the form of a ceramic platelet. The conversion element 303 converts electromagnetic radiation of a first dominant wavelength λ1 into electromagnetic radiation of a second dominant wavelength λ2. In particular, the second dominant wavelength λ2 is greater than the first dominant wavelength λ1. For example, the first electromagnetic radiation is partially or completely converted. In the case of partial conversion, the conversion element 303 emits a mixed radiation of converted and unconverted electromagnetic radiation. The conversion element 303 is mechanically self-supporting.

[0091] Figure 9 shows a schematic cross-sectional view of the conversion structure 30 described herein according to a second exemplary embodiment. The second exemplary embodiment essentially corresponds to the first exemplary embodiment shown in Figure 8. In contrast to the first exemplary embodiment, the conversion structure 30 does not include a diffusion element 302. The conversion element 303 is directly positioned on the output coupling element 301. The conversion element 303 is mechanically self-supporting and is supported by a protrusion 3010 of the output coupling element 301.

[0092] Figure 10 shows a schematic cross-sectional view of the conversion structure 30 described herein according to a third exemplary embodiment. The third exemplary embodiment essentially corresponds to the second exemplary embodiment shown in Figure 9. In contrast to the second exemplary embodiment, the conversion element 303 is applied to the output coupling element 301 by spray coating. For example, the conversion element 303 is formed of a matrix material in which light-emitting material particles are embedded. Radiation-transparent polymers, such as polysiloxanes, are particularly suitable as the matrix material. The conversion element 303 extends within the recess 3011 of the output coupling element 301. The conversion element 303 protrudes laterally beyond the output coupling element 301. Advantageously, this results in particularly good adhesion between the output coupling element 301 and the conversion element 303.

[0093] Figure 11 shows a schematic cross-sectional view of the conversion structure 30 described herein according to a fourth exemplary embodiment. The fourth exemplary embodiment essentially corresponds to the third exemplary embodiment shown in Figure 10. In contrast to the third exemplary embodiment, the conversion element 303 is structured. For example, the conversion element 303 is constructed by photolithography. The lateral spread of the conversion element 303 corresponds to the lateral spread of the convex portion 3010 in the structure of the output coupling element 301.

[0094] Figure 12 shows a schematic cross-sectional view of the optoelectronic module 1 described herein according to a sixth exemplary embodiment. The sixth exemplary embodiment essentially corresponds to the first exemplary embodiment shown in Figure 1. In contrast to the first exemplary embodiment, the semiconductor component 10 comprises a plurality of semiconductor emitters 11, 12, and 13. The first semiconductor emitter 11 emits electromagnetic radiation of a first dominant wavelength λ1 that is variable in a first spectral range, the second semiconductor emitter 12 emits electromagnetic radiation of a second dominant wavelength λ2 that is variable in a second spectral range, and the third semiconductor emitter 13 emits electromagnetic radiation of a third dominant wavelength λ3 that is variable in a third spectral range.

[0095] The first dominant wavelength λ1, the second dominant wavelength λ2, and the third dominant wavelength λ3 are different from each other. Preferably, the spectral ranges of the first, second, and third electromagnetic radiation do not overlap. By using multiple semiconductor emitters 11, 12, and 13, the semiconductor component 10 can emit electromagnetic radiation over a wider bandwidth.

[0096] Alternatively, the first, second, and third main wavelengths λ1, λ2, and λ3 are identical. When separate input waveguides 201 are assigned to each semiconductor emitter 11, 12, and 13, the distinction between the first, second, and third main wavelengths λ1, λ2, and λ3 may become unnecessary. This allows for particularly small variations in the output wavelengths in each output waveguide 202.

[0097] The input waveguides 201 are assigned to the respective semiconductor emitters 11, 12, and 13. Advantageously, this reduces the number of required distribution elements 210 within the distribution structure 20. For example, a first number of output waveguides 202 are assigned to the first semiconductor emitter 11, a second number of output waveguides 202 are assigned to the second semiconductor emitter 12, and a third number of output waveguides 202 are assigned to the third semiconductor emitter 13.

[0098] Figure 13A shows a schematic top view of the optoelectronic module 1 described herein according to a seventh exemplary embodiment. The seventh exemplary embodiment essentially corresponds to the first exemplary embodiment shown in Figure 1. The distribution element 210 is designed as a microring resonator. From the optoelectronic semiconductor component 10, the main wavelengths λ1 to λ n Different electromagnetic radiation is emitted. Each distribution element 210 emits a main wavelength λ1 to λ n It has a passband for one of the output waveguides 202. A distribution element 210 is assigned to each of the output waveguides 202.

[0099] The distribution structure 20, the conversion structure 30, and the input coupling element 2011 are arranged on a common carrier 60. The carrier 60 is formed from, for example, one of the following materials: III / V compound semiconductor materials, silicon-on-insulator (SOI), silicon dioxide, silicon nitride, indium phosphide, gallium arsenide, diamond, diamond-on-insulator (DOI), lithium niobate, aluminum oxide, aluminum nitride, and gallium nitride.

[0100] Figure 13B is a schematic cross-sectional view of the optoelectronic module 1 described herein according to a seventh exemplary embodiment. Figure 13B is a cross-sectional view along the line AA in Figure 13A. In this cross-sectional view, the structure of the conversion structure 30 is recognizable. The diffusion element 302 is located between the conversion element 303 and the output coupling element 301. The input waveguide 201 is located on the carrier 60.

[0101] Figure 14 shows a schematic top view of the optoelectronic module 1 described herein according to an eighth exemplary embodiment. The eighth exemplary embodiment essentially corresponds to the third exemplary embodiment shown in Figure 3. In contrast to the third exemplary embodiment, the distribution structure 20 is a passive wavelength-selective filter element. In particular, the distribution element 210 is designed as a passive Mach-Zehnder interferometer. Because the interferometer is wavelength-sensitive, it is suitable for wavelength division multiplexing. The Mach-Zehnder interferometer can be used as a two-wavelength separator. To route the respective components of wavelengths λ1 and λ2 to different output sections, the path length difference Δd is selected such that for λ1, the phase difference Φ = 2πd / λ is an even multiple of π, and for λ2, the phase difference Φ = 2πd / λ is an odd multiple of π. This means Δd = q1 * λ1 / 2 or Δd = q2 * λ2 / 2, where q1 is even and q2 is odd. Multiple Mach-Zehnder interferometers can be used in series to separate three or more wavelengths.

[0102] Figure 15 shows a schematic top view of the optoelectronic module 1 described herein according to a ninth exemplary embodiment. The ninth exemplary embodiment essentially corresponds to the first exemplary embodiment shown in Figure 1. The distributing element 210 is designed as an interference thin-film filter. The distributing element 210 and a plurality of reflectors 203 are arranged on a carrier 60. The reflectors 203 are formed of a broadband reflective material, in particular silver. The carrier 60 is designed as a gradient refractive index rod.

[0103] Main wavelength λ1~λ n These are separated by the arrangement of different filters. The transmitted electromagnetic radiation is directed to each filter, which allows one dominant wavelength to pass through and blocks other dominant wavelengths. The incident electromagnetic radiation is induced through a series of narrowband interferometer filters, each of which transmits one wavelength in the passband and reflects all other wavelengths to the next filter.

[0104] Figure 16 shows a schematic cross-sectional view of an apparatus having a plurality of optoelectronic modules 1 according to the Specified Specified, according to a tenth exemplary embodiment. Two optoelectronic modules 1 are arranged such that the conversion structures 30 of the two optoelectronic modules 1 are adjacent to each other.

[0105] Optoelectronic module 1 is essentially identical to the exemplary embodiment of the optoelectronic module shown in Figure 1. By using several optoelectronic modules 1, the number of controllable conversion structures 30 can be scaled particularly easily. Preferably, the optoelectronic modules used are of the same design.

[0106] Figure 17 shows a control concept for the optoelectronic module 1 described herein, according to a third exemplary embodiment. The optoelectronic module 1, having a semiconductor component 10 and a distribution structure 20, is controlled. The semiconductor component 10 emits electromagnetic radiation, preferably having different discrete main wavelengths in the visible spectral range. The distribution structure 20 comprises a plurality of distribution elements 210 provided as passive wavelength-selective filter elements. Each distribution element 210 has an output section. The output sections of the distribution elements 210 are assigned unique designations B1, B2, B3, and B4.

[0107] The control concept indicates the path of the main wavelengths λ1-λ4 emitted by the semiconductor component 10 over the display period TD, and the optical output power of the semiconductor component 10. The display period TD represents the time for which electromagnetic radiation with a desired intensity distribution is provided in the output waveguide 202. Advantageously, the display period TD is short enough that no impression of flickering is generated to a human observer. For example, the display period TD is at most 1 / 30 second, preferably at most 1 / 60 second, and particularly preferably at most 1 / 100 second.

[0108] The optical output power of semiconductor component 10 remains constant during the indicated period TD.

[0109] Different main wavelengths λ1 to λ4 are emitted for a time corresponding to the main wavelength during the display period TD. Only the distribution element 210 having the output section B2 transmits the electromagnetic radiation at the second main wavelength λ2. As a result, electromagnetic radiation is emitted from above in the second output waveguide 202 and emitted by the downstream conversion structure 30. In this way, by selectively changing the main wavelength from which the semiconductor component 10 emits radiation, each output waveguide 202 can be irradiated with a desired intensity distribution.

[0110] Figure 18 shows a control concept for the optoelectronic module 1 described herein, according to a fourth exemplary embodiment. The structure of the optoelectronic module 1 is essentially the same as that of the optoelectronic module 1 shown in Figure 17. In contrast to the control concept shown in Figure 17, the optical output power of the semiconductor component 10 is modulated during the indicated period TD.

[0111] During the specified period TD, different dominant wavelengths are emitted within the same period. Therefore, the rate of change of the dominant wavelength can be set to a constant value. The optical output power of the semiconductor component 10 is modulated in synchronization with the modulation of the dominant wavelength during the specified period TD. For example, since the semiconductor component 1 does not emit electromagnetic radiation at the first dominant wavelength, the output waveguide 202 having the output section B1 is not irradiated. Therefore, by modulating the output power of the semiconductor component 10, a desired intensity distribution in the output waveguide 202 can be achieved.

[0112] The scope of the carrier is not limited by the description based on exemplary embodiments. Rather, the invention includes any novel features, including any combination of features in the claims, i.e., any combination of features in the claims, even if those features or combinations of features in the claims are not expressly described in the claims.

[0113] This application claims priority to German Patent Application No. 102022106271.6, the disclosures of which are incorporated herein by reference. [Explanation of Symbols]

[0114] 1 Optoelectronics Module 10 Semiconductor Components 11 First semiconductor emitter 12. Second semiconductor emitter 13. Third semiconductor emitter 20 Distribution structure 201 Input Waveguide 2011 Input coupling element 202 Output waveguide 203 Reflector 210 distribution element 211 Control Line 212 Control device 30 Conversion Structures 301 Output coupling element 3010 protrusion 3011 recess 302 Diffusion plot 303 Conversion element 40 optical elements 50 Optical waveguide 60 Carriers 70 Heatsink TD display period λ1 First main wavelength λ2 is the second main wavelength λ3 is the third main wavelength λ n The nth dominant wavelength

Claims

1. A semiconductor component (10) configured to emit electromagnetic radiation, A distribution structure (20) comprising multiple distribution elements (210), at least one input waveguide (201), and multiple output waveguides (202), It comprises multiple conversion structures (30), The distribution element (210), the at least one input waveguide (201), and the output waveguide (202) are integrally integrated on a substrate. The electromagnetic radiation emitted by the semiconductor component (10) enters the distribution structure (20) via the input waveguide (201). The electromagnetic radiation is emitted from the distribution structure (20) via the output waveguide (202). The conversion structure (30) is located downstream of each output waveguide (202) and is configured to convert electromagnetic radiation of a first wavelength to electromagnetic radiation of a second wavelength different from the first wavelength. Each conversion structure (30) comprises an output coupling element (301) and a diffusion element (302), The output coupling element (301) has a structure having a plurality of protrusions (3010) and recesses (3011) on the side facing the diffusion element (302). Optoelectronics module (1).

2. The distribution element (210) is a passive wavelength-selective filter element. The optoelectronic module (1) according to claim 1.

3. The distribution element (210) has a passband with a maximum bandwidth of 2 nm. The optoelectronic module (1) according to claim 2.

4. The semiconductor component (10) is configured to emit coherent radiation having a moduloable main wavelength. The optoelectronic module (1) according to claim 2 or 3.

5. The dominant wavelength of the electromagnetic radiation emitted by the semiconductor component (10) is moduloable over a bandwidth of at least 25 nm in a spectral range including a wavelength of 447 nm. The optoelectronic module (1) according to claim 4.

6. The main wavelength is moduloable at a frequency of at least 500 Hz. The optoelectronic module (1) according to claim 5.

7. The semiconductor component (10) has at least two semiconductor emitters (11, 12), the first semiconductor emitter (11) is configured to emit electromagnetic radiation having a variable dominant wavelength in a first spectral range, and the second semiconductor emitter (12) is configured to emit electromagnetic radiation having a variable dominant wavelength in a second spectral range. The optoelectronic module (1) according to claim 2.

8. An input waveguide (201) is assigned to each semiconductor emitter (11, 12). The optoelectronic module (1) according to claim 7.

9. Each output waveguide (202) is assigned exactly one distribution element (210). The optoelectronic module (1) according to claim 2.

10. The distribution element (210) is an active and controllable coupling element. The optoelectronic module (1) according to claim 1.

11. The distribution element (210) is modulated at a frequency of at least 0.5 GHz. The optoelectronic module (1) according to claim 10.

12. The semiconductor component (10) is configured to emit coherent radiation having a dominant wavelength in the blue spectral range. The optoelectronic module (1) according to claim 10 or 11.

13. The input coupling element (2011) is associated with each input waveguide (201). The optoelectronic module (1) according to claim 1.

14. The semiconductor component (10) is formed of a III / V compound semiconductor material. The optoelectronic module (1) according to claim 1.

15. The distribution structure (20) is formed of one of the following materials: III / V compound semiconductor material, silicon on an insulator (SOI), silicon dioxide, silicon nitride, indium phosphide, gallium arsenide, diamond, diamond on an insulator (DOI), lithium niobate, aluminum oxide, aluminum nitride, and gallium nitride. The optoelectronic module (1) according to claim 1.

16. The optoelectronic module (1) comprises at least 10 output waveguides (202). The optoelectronic module (1) according to claim 1.

17. The distribution element (210) is provided as a passive wavelength-selective filter element. The semiconductor component (10) emits electromagnetic radiation of different discrete main wavelengths, in a method of operating the optoelectronic module (1) according to claim 1, Each of the different dominant wavelengths is emitted for a time corresponding to the dominant wavelength during the indicated period (TD), and The optical output power of the semiconductor component (10) is constant during the indicated period (TD), or Different dominant wavelengths are emitted for the same period within the indicated period (TD), and The optical output power of the semiconductor component (10) is modulated in synchronization with the modulation of the main wavelength during the display period (TD). How it works.

18. The distribution element (210) is provided as an active and controllable coupling element. The semiconductor component (10) emits electromagnetic radiation at a constant main wavelength, in the method of operating the optoelectronic module (1) according to claim 1. The optical output power of the semiconductor component (10) is constant during the display period (TD), and The distribution element (210) acts as a variablely modulable beam splitter, and the distribution of the distribution element is constant over the indicated period (TD), or The distribution element (210) acts as an optical switch and is switched multiple times during the display period (TD), The optical output power of the semiconductor component (10) is modulated in synchronization with the distribution element (210) during the display period (TD). How it works.

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