Lamellar ceramic structure

Abstract

In some examples, the substrate support assembly includes a monolithic ceramic body, a heater element disposed within the monolithic ceramic body, and an RF antenna disposed within the monolithic ceramic body. One or more power lines supply power to the heater element and the RF antenna. A lamella structure is formed or included within the monolithic ceramic body, the lamella structure including at least one layer having a thermal conductivity different from that of the monolithic ceramic body.

Description

Technical Field

[0001] [Claim of Priority] This patent application claims the benefit of priority of U.S. Provisional Patent Application No. 62 / 818,591, filed Mar. 14, 2019, by Hollingsworth et al., entitled “Lamellar Ceramic Structure” (Attorney Docket No. 4948.042PRV), the entire disclosure of which is incorporated herein by reference.

[0002] The present disclosure generally relates to a lamellar ceramic structure, and more particularly to a substrate support assembly including a lamellar ceramic structure for a wafer processing chamber in semiconductor manufacturing operations.

Background Art

[0003] The background description provided here is for the purpose of generally presenting the content of the present disclosure. Within the scope described in this background art section, the research by the inventors named at the present time, as well as aspects of the description that cannot be separately regarded as prior art at the time of filing, are not admitted as prior art against the present disclosure, whether explicitly or implicitly.

[0004] Ceramic pedestals and electrostatic chucks may have local hot spots that can shift thermodynamic or wafer processing conditions. The effects caused by hot spots include two aspects: insufficient heat dissipation ability and inconsistent (or non-reproducible) placement of heater elements within the ceramic body of the chuck. Thicker ceramic bodies can diffuse heat more uniformly, but the raw material and processing costs to achieve this result are often exorbitant using current technology. The increased thermal mass may also reduce the throughput of the tool. The reproducibility of placement may be adversely affected by the shift of raw material powder during processing.

[0005] Furthermore, ceramic bases and electrostatic chucks are vulnerable to mechanical failure due to thermal stress. For example, ceramic bases and electrostatic chucks formed by hot pressing may be subject to certain limitations inherent in such a method. In some cases, the total power output of the hot pressing operation may be constrained by the mass of the pre-formed body configured to fit the available hot pressing die. The hot pressing operation may be further constrained by the density of the preform before sintering. [Overview of the project]

[0006] In some examples, the substrate support assembly comprises a monolithic ceramic body, a heater element disposed within the monolithic ceramic body, an RF antenna disposed within the monolithic ceramic body, one or more power lines supplying power to the heater element and the RF antenna, and a lamellar structure formed within or included within the monolithic ceramic body, the lamellar structure comprising at least one layer having a thermal conductivity different from that of the monolithic ceramic body.

[0007] In some examples, at least one layer is placed on top of the heater element in use.

[0008] In some examples, at least one layer is placed beneath the heater element in use.

[0009] In some examples, at least one layer contains ceramic material.

[0010] In some examples, at least one layer contains a metallic material or an intermetallic material.

[0011] In some examples, the lamellar structure comprises at least two layers, one of which has a different thermal conductivity from at least one of the other layers in the lamellar structure.

[0012] In some cases, the thermal conductivity of at least one layer of the lamellar structure differs from that of the monolithic ceramic body.

[0013] In some examples, the lamellar structure comprises at least two layers, and each of these at least two layers has a different thermal conductivity than the other layers within the lamellar structure.

[0014] In some examples, at least one layer of the lamellar structure includes a plate of atmospheric pressure sintered aluminum nitride.

[0015] In some examples, the lamellar structure, when formed or incorporated within a monolithic ceramic body, contains a mesh of silicon nitride (Si3N4) that reacts with the material of the monolithic ceramic body.

[0016] Further examples are described in the embodiments for carrying out the following inventions. [Brief explanation of the drawing]

[0017] The attached drawings illustrate several embodiments, but these are illustrative examples and not limitations.

[0018] [Figure 1] Figure 1 shows a simplified example of a plasma-based processing chamber that may include a substrate support assembly with an electrostatic chuck (ESC) for supporting the substrate during plasma processing.

[0019] [Figure 2] Figure 2 shows an example of a conventional substrate support assembly that does not have a lamellar structure.

[0020] [Figure 3] Figure 3 shows an exemplary configuration of a substrate support assembly according to an example of the present disclosure.

[0021] [Figure 4]FIG. 4 is a flowchart of exemplary operations in a method according to an exemplary embodiment.

Best Mode for Carrying Out the Invention

[0022] The following description includes systems, methods, and techniques that embody exemplary embodiments of the present disclosure. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the exemplary embodiments. However, it will be apparent to one skilled in the art that the subject matter of the present invention may be practiced without these specific details.

[0023] Part of the disclosure of this patent document includes material subject to copyright protection. The copyright owner reserves all copyrights, except that the copyright owner does not object to the copying of the patent documents or patent disclosures by any person as long as the patent documents or patent disclosures appear in the patent package or records of the Patent and Trademark Office. The following notice applies to the software and data that are described below or illustrated and form part of this document: Lam Research Corporation, 2019 - 2020, All Rights Reserved.

[0024] Referring now to FIG. 1, an example of a plasma-based processing chamber is shown. The present subject matter can be used in various semiconductor manufacturing and wafer processing operations, but in the illustrated example, the plasma-based processing chamber is described in the context of plasma-enhanced or radical-enhanced chemical vapor deposition (CVD) or atomic layer deposition (ALD) operations. Those skilled in the art will also recognize that other types of ALD processing techniques are known (e.g., thermal-based ALD operations) and non-plasma-based processing chambers may be incorporated. An atomic layer deposition (ALD) tool is a special type of chemical vapor deposition (CVD) processing system in which an ALD reaction occurs between two or more chemical species. The two or more chemical species are called precursor gases and are used to form a thin film deposition of material on a substrate such as a silicon wafer used in the semiconductor industry. The precursor gases are sequentially introduced into the ALD processing chamber and react with the surface of the substrate to form a deposition layer. Generally, the substrate interacts repeatedly with the precursor to slowly deposit a thicker and thicker layer of one or more material films on the substrate. In certain applications, multiple precursor gases can be used to form one or more films of various types during the substrate manufacturing process.

[0025] FIG. 1 is shown to include a plasma-based processing chamber 101 in which a showerhead 103 (which can be a showerhead electrode) and a substrate support assembly 107 are disposed. The substrate support assembly 107 can include a pedestal as will be described in more detail below. Typically, the substrate support assembly 107 is intended to provide a substantially isothermal surface and can function as both a heating element and a heat sink for the substrate 105. The substrate support assembly 107 can include an electrostatic chuck (ESC) that includes a heating element to assist in processing the substrate 105 as described herein. The substrate 105 can include a wafer containing an elemental semiconductor (e.g., silicon or germanium), a wafer containing a compound element (e.g., gallium arsenide (GaAs) or gallium nitride (GaN)), or various other substrate types including conductive, semiconductive, and non-conductive substrates.

[0026] During operation, the substrate 105 is loaded onto the substrate support assembly 107 through the load port 109. A gas line 113 can supply one or more process gases (e.g., precursor gases) to the shower head 103. The shower head 103 then delivers one or more process gases to the plasma-based processing chamber 101. A gas source 111 (e.g., one or more precursor gas ampoules) supplying one or more process gases is coupled to the gas line 113. In some examples, an RF power supply 115 is coupled to the shower head 103. In other examples, the power supply is coupled to the substrate support assembly 107 or the ESC.

[0027] Before flowing into the showerhead 103 and downstream of the gas line 113, a combination of a point of use (POU) and manifold (not shown) controls the inflow of one or more process gases into the plasma-based processing chamber 101. In the case of a plasma-based processing chamber 101 used to deposit thin films in plasma-enhanced ALD (PEALD) operation, precursor gases can be mixed within the showerhead 103.

[0028] During operation, the plasma-based processing chamber 101 is evacuated by a vacuum pump 117. RF power is capacitively coupled between the showerhead 103 and a lower electrode (not shown) housed in or on the substrate support assembly 107. The substrate support assembly 107 is typically supplied with two or more RFs. For example, in various embodiments, the RFs may be selected from at least one frequency, as desired, such as about 1 MHz, 2 MHz, 13.56 MHz, 27 MHz, 60 MHz, and other frequencies. Coils designed to block or partially block specific RFs can be designed as needed. Thus, the specific frequencies discussed herein are provided simply for ease of understanding. The RF power is used to excite one or more process gases into the plasma in the space between the substrate 105 and the showerhead 103. The plasma can assist in depositing various layers (not shown) on the substrate 105. In other applications, the plasma can be used to etch device features into various layers on the substrate 105. The RF power is coupled at least through the substrate support assembly 107. The substrate support assembly 107 may have an internally integrated heater (not shown in Figure 1). The detailed design of the plasma-based processing chamber 101 may vary.

[0029] Referring here to Figure 2, a simplified example of a conventional substrate support assembly (or pedestal) 200 is shown. The exemplary substrate support assembly 200 does not include the lamellar structure of the present disclosure. This conventional example 200 would typically suffer from one or more of the limitations discussed above, including insufficient heat diffusion and the formation of hot spots. The conventional substrate support assembly 200 includes a pedestal body 202 on which a heater element 204 is provided. The pedestal body 202 also includes an RF / ESC electrode 206. The pedestal body 202 is supported by a mechanical support such as a stem 208. Lines 212 and 214 (such as power leads or conductors) supplying power to the heater element 204 and the RF / ESC electrode 206 pass through the stem 208, respectively. During wafer processing, the substrate support assembly 200 supports a substrate 105, such as a silicon (Si) wafer 210.

[0030] To address at least some of the aforementioned challenges, some examples of the present disclosure include anisotropic composite structures, such as lamellar structures, formed within the body of the substrate support assembly 200. In some examples, the body of the substrate support assembly 200 includes a monolithic ceramic material or body. The lamellar structure within the monolithic ceramic body may include one or more layers of material having a relatively high or low thermal conductivity compared to the thermal conductivity of the ceramic material of the body of the substrate support assembly 200. In some examples, a layer of material having a relatively high thermal conductivity can enhance the flow of heat to a designated area of ​​the ceramic body of the substrate support assembly 200, or to other areas of the substrate support assembly 200. In some examples, a layer of material having a relatively low thermal conductivity can slow down the flow of heat to a designated area of ​​the ceramic body of the substrate support assembly 200, or to other areas of the substrate support assembly 200. A homogeneous or hybrid combination of layers of materials with different thermal conductivity can be selected and provided within the ceramic body of the substrate support assembly 200. In some examples, the combination of material layers allows for the enhancement or inhibition of lateral or vertical heat diffusion within a given thickness or portion of the ceramic body of the substrate support assembly 200.

[0031] In some cases, thermal conductivity can be defined as the amount of heat that passes through a unit area of ​​a material with a thickness of 1 per unit time when the temperature of the opposite side differs by 1 degree. The unit of thermal conductivity derived from the SI is watts per meter of Kelvin (Wm). -1 .K -1 )

[0032] In some examples, the lamellar structure within the ceramic body of the substrate support assembly 200 includes layered layers or components of a relatively high thermal conductivity material extending laterally across the substrate support assembly 200, and layers (lamellae) of a relatively low thermal conductivity positioned vertically across the substrate support assembly 200.

[0033] In some examples, the lamellar structure within the ceramic body is formed by sintering and hot-pressing operations. In some examples, one or more plates of ceramic material with relatively low thermal conductivity are selected to form layers of the lamellar structure. In some examples, the plates can be sintered to a percentage of the theoretical density of the ceramic body. The density level can be selected to optimize plate adhesion during hot-pressing of the ceramic body of the substrate support assembly 200. In some examples, the plates are machined to a desired geometric shape and optionally, surface treatments and / or coatings are provided to further improve plate adhesion within the ceramic body. In some examples, the lamellar structure is designed to allow heat to flow more easily or quickly in the longitudinal direction of each lamellar rather than in the direction in which the lamellae are stacked.

[0034] In some examples, a preform (or "green structure") is formed that includes a lamellar structure embedded within a ceramic body. In some examples, at least one lamellar in the lamellar structure is formed by sintering the powder of the preform. In some examples, the overall lamellar structure is not formed until the entire ceramic body is sintered. The lamellar structure may consist of sintered metal or ceramic plates, or include one or more layers comprising them. The preform may include other internal structures or components of the ceramic base or ESC, such as electrical circuits for heater elements 204, RF electrodes 206, clamp electrodes, etc. The internal structures or components of the preform may be embedded in a compressed powder having a different composition from the ceramic body into which they are embedded. The compressed powder may be selected to enhance or delay the thermal conductivity and / or adhesion of the internal structures or components.

[0035] Next, in some examples, the preform is hot-pressed, and the various powders and plates inside bond together as the preform sinters to a desired theoretical density or close to it. In some examples, one or more layers of the lamellar structure having a selected thermal conductivity profile may consist of or include another material such as metal, or a structure such as a metal mesh. These exemplary materials or structures may be formed from or include metal sheets, screens, or meshes, or may be formed by screen printing metal or metal layers onto layers to form a composite structure.

[0036] In some examples, one or more layers of the lamellar structure include ceramic material, arranged as described above, and may further include a coating. The exemplary coating may include additives or have properties enhanced or modified by chemical surface treatments that locally alter the thermal conductivity of the coating or the material to which the coating is applied. In some examples, a plate containing a material with high thermal conductivity is coated with a substance or mixture of substances selected to reduce the thermal conductivity of its upper and lower surfaces during subsequent heat treatment of the ceramic body. In some examples, the lamellar structure within the ceramic body may each consist of three layers, or in combination, having a thickness ranging from 0.1 mm to 5 mm.

[0037] In some examples, a layer within a lamellar structure contains multiple sublayers. The total thickness of the multiple sublayers is equal to or close to the thickness of the layer. The upper and lower sublayers in the arrangement of sublayers may have a thickness that can be controlled by the diffusion distance (if a solid solution is formed relative to the central sublayer) or by the amount of coating added to the central sublayer. The central unreacted layer may have a thickness determined by the depth of the reaction that forms the upper and lower sublayers.

[0038] In some examples, one or more layers of the lamellar structure include plates of homogeneous or solid material selected to react with or dissolve in the surrounding ceramic material of the ceramic body during sintering, thereby locally modifying the thermal conductivity of itself or the ceramic body and achieving a desired heat transfer profile for the lamellar structure within the ceramic body. Conventionally, hot pressing removes voids and channels. In some examples, the preform structure or ceramic body is specifically formed by other means to form or include internal voids or channels. Intentional voids or channels may be provided on or adjacent to specific layers of the lamellar structure and configured to provide a desired heat transfer (thermal conductivity) profile. In some examples, the ceramic body may include a sintered sacrificial layer that can be chemically etched off after all high-temperature processing is complete.

[0039] Some examples can address thermal conductivity issues associated with the placement of non-repeatable components. Some examples employ a datum or base structure by including a rigid sheet or platform of appropriate material within the ceramic body of the substrate support assembly 200 (e.g., a pedestal) to constrain the relative positions of other pedestal components during the manufacturing of the ceramic body. The ceramic body may include lamellar structures of one or more of the above-described types as constrained components.

[0040] In some cases, a pre-sintered plate or platform configured as a datum structure is located within the ceramic body preform, close to the plane of the heater circuit, to reduce the influence of initial density variations within the ceramic body during sintering on the final location of the heating elements of the heater circuit.

[0041] In some examples, the datum structure includes a ceramic plate configured to receive the heater element 204 in a desired or fixed configuration only. The heater element 204 can be attached to the ceramic plate using fasteners and / or suitable adhesives. In some examples, a sinterable preform can be attached to the ceramic plate before being placed on the die and may be further configured to restrain the location of the heating element during sintering.

[0042] Several examples herein can address the vulnerability of a substrate support assembly 200 or ceramic body to thermal stress, including a lamellar structure. Here, in some examples, one or more structural elements (such as plates, hoops, beams, or other suitable elements) having desirable structural properties are placed within a preform, lamellar structure, or ceramic body to counteract anticipated thermal stresses that may occur on the surface or within the associated preform, lamellar structure, or body. In some examples, one or more structural members within the preform, lamellar structure, or ceramic body have a larger coefficient of thermal expansion (CTE) than the bulk of the ceramic material on which they are provided. A difference between the manufacturing temperature at which the structural members take their final shape and the operating temperature of the ceramic body, or the pedestal or ESC on which the structural members are used, can cause tensile stresses to occur in the structural members.

[0043] In some cases, preforms, lamellar structures, or ceramic bodies are heat-treated after being sintered at a temperature at which embedded high-CTE structural members deform at a faster rate (e.g., by creep deformation) than the surrounding material on which they are placed. A faster deformation rate can relieve thermal stress within the lamellar structure or ceramic body preform, and in some cases, this relief is provided at a specific controlled level or a desired level.

[0044] In some examples, one or more different parts or components of a preform, lamellar structure, or ceramic body may be designed to experience different creep rates by using selective heat treatment, alloying, doping, or other methods to control or generate the final stress profile. Some examples include ceramic structural elements that are coated with additives or modified through chemical surface treatments that locally alter the coefficient of thermal expansion of the material surrounding the structural element, as described above, for example. The material of the structural element may be selected to react with or melt into the surrounding ceramic material in a particular manner during sintering and added to the preform. The reaction or melting may alter the coefficient of thermal expansion, and in some examples, the added material may actually constitute or be included in structural members or layers of the lamellar structure within the surrounding bulk ceramic material.

[0045] Several examples herein can address problems related to limited die space in hot pressing, or more generally, the configuration of “fixtures” (e.g., dies, boats, crucibles, etc.) in high-temperature processing. Some examples involve increasing the amount of ceramic material in the die before sintering and / or reducing the thickness of the ceramic required to achieve a given thermal uniformity specification. In some examples, one or more plates of ceramic material (e.g., forming one or more layers of a lamellar structure) are sintered without pressure and then added to one or more preforms. The conventional height of each preform can be reduced to minimize the final volume of die material, thereby allowing more preforms to fit within a given die.

[0046] In some examples, the design of the substrate support assembly 200 (base) is configured to take advantage of improved heat diffusion. For example, the wafer 210 can be placed closer to the heating element than before, without sacrificing thermal uniformity, while allowing the thinner ceramic body to achieve the same or similar wafer processing performance. This approach makes it possible to save raw materials and hot pressing capacity.

[0047] Therefore, in some examples, the substrate support assembly 200 can be given anisotropic thermal properties and improved thermal diffusion performance by incorporating one or more plates or layers of separate thermally conductive material into the substrate support structure (such as a ceramic pedestal or monolithic ceramic body). The incorporation of such plates or layers may be carried out before sintering of the ceramic body material on which they are placed. This approach also makes it possible to construct prestressed ceramic bodies for pedestals with improved resistance to fracture. Using some examples herein, better control of the internal structure within the ceramic body can be achieved and the throughput of systems for manufacturing these pedestals can be improved.

[0048] Referring here to Figure 3, an embodiment of an exemplary substrate support assembly 300 according to the present disclosure is shown. The exemplary substrate support assembly 300 includes an exemplary lamellar structure 316 of the present disclosure. The exemplary substrate support assembly 300 attempts to address one or more of the limitations further discussed above, including insufficient heat diffusion and the formation of hot spots. The substrate support assembly 300 includes a base body 302 on which a heater element 304 is provided. The base body 302 includes or may consist of a monolithic ceramic body. The base body 302 also includes an RF / ESC electrode 306. The base body 302 is supported by a mechanical support such as a stem 308. Power lines 312 and 314 supply power to the heater element 304 and the RF / ESC electrode 206. In some examples, lines 312 and 314 pass through the stem 208 as shown. During substrate processing, the substrate support assembly 300 supports the substrate 105, such as a silicon (Si) wafer 310.

[0049] In the illustrated example, the lamellar structure 316 includes two layers 318 and 320 arranged vertically above and below each other in a layered or lamellar arrangement. In some examples, the ceramic material surrounding or adjacent to the substrate support assembly 300 can be considered to constitute three additional layers, arranged below, between, and above layers 318 and 320, respectively. Thus, the lamellar structure 316 in this example includes five layers. Many other configurations of the lamellar structure 316 are possible.

[0050] In some examples, each layer of the lamellar structure 316 can enhance or slow the thermal conductivity in a direction along its length (i.e., the lateral or horizontal direction of the assembly 300). In some examples, each vertically positioned layer of the lamellar structure 316 may have a different thermal conductivity than at least one other layer in the structure 316, resulting in a variable heat transfer profile being formed in the vertical direction of the substrate support assembly 300, as well as (or alternatively) the lateral direction of the substrate support assembly 300.

[0051] In some examples, the upper layer 318 of the lamellar structure 316 includes a material with a lower thermal conductivity than the ceramic material surrounding the base body 302. The reduced thermal conductivity can delay the direct upward flow of heat emitted from the heater element 304 to the substrate 310. In some examples, this arrangement facilitates the laterally flow of emitted heat, for example, towards cooler regions of the base body 302 supporting the periphery of the substrate. The heat from the heater element 304 traveling along the path to the substrate 310 is delayed so that it can diffuse laterally. In some examples, the lower layer 320 of the lamellar structure 316 can delay the downward flow of heat from the heater element 304 to the stem 308, where it is lost as waste heat. In some examples, potentially wasted heat is retained and can diffuse relatively quickly laterally within the support assembly 300, and then upward, for example, to assist in substrate processing operations.

[0052] Other layer configurations and materials may be selected for the lamellar structure 316 to provide a desired heat transfer or thermal conductivity profile within the base body 302. For example, only one of the upper layer 318 or lower layer 320 may be provided. Some layers within the lamellar structure 316 may be positioned on one or both sides of the heater element 304. In some examples, the thermal conductivity and / or material of the ceramic material of the upper layer 318, lower layer 320, side layer (not shown), and base body 302 may differ and be selected to provide a given conductivity profile. The dimensions and specific placement of the layers may differ and / or be selected to provide a desired heat transfer or thermal conductivity profile for the base body 302. For example, the lamellar structure 316 may include one or more plates of low thermal conductivity atmospheric pressure sintered aluminum nitride (AlN) that are placed on a ceramic preform and then sintered to form the ceramic base body 302, with one or more plates embedded inside to define the lamellar structure 316. Another exemplary lamellar structure 316 or ceramic base body 302 may include an embedded mesh of silicon nitride (Si3N4) that reacts with the surrounding material, such as aluminum nitride, to produce a layer within the ceramic base body 302 with reduced thermal conductivity.

[0053] In some examples, the heater element 304 may be located within a heater zone. In some examples, one or more heater zones may be located within the base body 302. Each heater zone may contain multiple heater elements 304. In some examples, the RF antenna 306 (grid, or mesh, etc.) is located inside the base body 302, as opposed to being located outside the base body 302 within the external showerhead 103. The internal placement of the RF antenna 306 as a heat conduction element itself can help control the flow of heat within the base body 302 or to the silicon wafer 310.

[0054] In some examples, one or more layers forming the lamellar structure 316 within the base body 302 may each contain homogeneous (solid) or composite material or components. The one or more layers may be provided, for example, in a continuous or discontinuous grid formation at various heights within the base body 302. The grid formation may (or may not) surround the heater element 304 within the base body 302 laterally or vertically. An offset dimension, in other words, the distance between the grid-forming element or layer 318 or 320 (for example) within the lamellar structure 316 and the heater element 304, can be selected to provide a desired heat transfer or thermal conductivity profile. The offset dimension can similarly be established with respect to the outer perimeter or surface of the base body 302.

[0055] In some cases, the thermal conductivity of the layers within the lamellar structure 316 can be in the range of 5 to 200 W / m·K. In some cases, the thermal conductivity of the lamellar structure 316 within the base body 302 can be in the range of 75 to 00 W / m·K. In some cases, the thermal conductivity of the monolithic ceramic base body 302 can be in the range of 150 to 190 W / m·K.

[0056] In some examples, the material of the stem 308 is the same material as the material contained in layer 318 or 320 within the base body 302. In some examples, layer 318 or 320 (or a portion thereof) is provided at the joint between the layer and the stem 308.

[0057] The external dimensions of the solid or composite layer 318 or 320 within the lamellar structure 316 can be selected to conform to a given configuration or desired heat transfer characteristics of the base or ceramic body. The contour shape or profile of the layer 318 or 320 within the lamellar structure 316 may include the formation of a square, rectangle, or circle, or a combination thereof.

[0058] Certain layer materials may include metallic materials or intermetallic materials. Layer materials may include aluminum nitride, aluminum silicon nitride, aluminum oxynitride, yttrium aluminate, magnesium aluminate, tungsten, molybdenum, copper, carbon, boron nitride, and composite structures composed of the above materials. Certain base body materials may include aluminum nitride, aluminum oxynitride, aluminum oxide, aluminum silicon nitride, aluminum oxynitride, yttrium aluminate, magnesium aluminate, and composite structures composed of the above materials.

[0059] This disclosure also includes exemplary embodiments of the method. Referring to Figure 4, a method 400 for forming a substrate support assembly 300 includes: in operation 402, forming a monolithic ceramic body by molding a preform, the preform comprising a ceramic material; in operation 404, including a heater element 304 within the preform; in operation 406, including an RF antenna 306 within the preform; in operation 408, providing one or more power lines 312, 314 within the preform to supply power to the heater element 304 and RF antenna 306 in use; in operation 410, including or forming a lamellar structure 316 within the preform, the lamellar structure 316 comprising at least one layer having a thermal conductivity different from that of the monolithic ceramic body once formed; and in operation 412, sintering the preform.

[0060] In some examples, method 400 may further include providing at least one layer on top of the heater element 304 within the monolithic ceramic body.

[0061] In some examples, method 400 may further include providing at least one layer beneath the heater element 304 within the monolithic ceramic body.

[0062] In some examples, method 400 may further include embedding or incorporating ceramic material within at least one layer.

[0063] In some examples, method 400 may further include including a metallic material in at least one layer.

[0064] In some examples, method 400 may further include including at least two layers within the lamellar structure 316, one of which has a different thermal conductivity from at least one of the other layers within the lamellar structure 316.

[0065] In some examples, method 400 may further include including at least two layers within the lamellar structure 316, each of which has a different thermal conductivity than the other layers within the lamellar structure 316.

[0066] In some examples, method 400 may further include including at least two layers within the lamellar structure 316, wherein the thermal conductivity of at least one layer of the lamellar structure 316 is different from that of the monolithic ceramic body.

[0067] In some examples, method 400 further includes including a plate of atmospheric pressure sintered aluminum nitride within at least one layer of the lamellar structure 316.

[0068] In some examples, method 400 further includes including a silicon nitride (Si3N4) mesh within the lamellar structure 316, where the silicon nitride (Si3N4) reacts with the material of the monolithic ceramic body when the preform is sintered.

[0069] While embodiments have been described with reference to specific examples, it will be apparent that various modifications and changes can be made to these embodiments without departing from the broader scope of this disclosure. Therefore, this specification and the drawings should be considered in an illustrative rather than restrictive sense. The accompanying drawings, forming part of this specification, illustrate, not restrictively, specific embodiments in which the subject matter may be practiced. The illustrated embodiments are described in sufficient detail to enable those skilled in the art to practice the teachings disclosed herein. Other embodiments may be utilized, and other embodiments may be derived from the teachings disclosed in this specification, so as to enable structural and logical substitutions and modifications without departing from the scope of this disclosure. Therefore, this detailed description should not be interpreted in a restrictive sense, and the scope of the various embodiments is defined solely by the accompanying claims and all equivalents to which such claims are entitled.

[0070] Such embodiments of the subject matter of the present invention may be referred to herein individually and / or collectively by the term “invention,” but this is merely a matter of convenience and is not intended to spontaneously limit the scope of this application to any single invention or inventive concept (if more are actually disclosed). Therefore, while specific embodiments are illustrated and described herein, it should be understood that any configuration calculated to achieve the same objective may substitute for any particular embodiment shown. This disclosure is intended to cover all possible adaptations or variations of various embodiments. Combinations of the above embodiments with other embodiments not specifically described herein will be apparent to those skilled in the art upon consideration of the above description. This disclosure includes the following examples of applications. [Application Example 1] Monolithic ceramic body, A heater element arranged within the monolithic ceramic body, An RF antenna is arranged within the monolithic ceramic body, One or more power lines supplying power to the heater element and the RF antenna, A lamellar structure formed or contained within the monolithic ceramic body, the lamellar structure having at least one layer having a thermal conductivity different from that of the monolithic ceramic body. A substrate support assembly comprising the above. [Application Example 2] The substrate support assembly described in Application Example 1, The at least one layer is a substrate support assembly positioned on top of the heater element in use. [Application Example 3] The substrate support assembly described in Application Example 1, The at least one layer is a substrate support assembly positioned beneath the heater element in use. [Application Example 4] The substrate support assembly described in Application Example 1, The substrate support assembly comprises at least one layer containing a ceramic material. [Application Example 5] The substrate support assembly described in Application Example 1, A substrate support assembly wherein at least one layer comprises a metallic material or an intermetallic material. [Application Example 6] The substrate support assembly described in Application Example 1, A substrate support assembly comprising a lamellar structure including at least two layers, one of which has a different thermal conductivity from at least one of the other layers in the lamellar structure. [Application Example 7] A substrate support assembly as described in Application Example 6, A substrate support assembly wherein the thermal conductivity of at least one layer of the lamellar structure is different from the thermal conductivity of the monolithic ceramic body. [Application Example 8] The substrate support assembly described in Application Example 1, A substrate support assembly wherein the lamellar structure comprises at least two layers, each of the at least two layers having a different thermal conductivity than the other layers in the lamellar structure. [Application Example 9] The substrate support assembly described in Application Example 1, A substrate support assembly comprising a plate of atmospheric pressure sintered aluminum nitride, wherein the at least one layer of the lamellar structure. [Application Example 10] The substrate support assembly described in Application Example 1, When the lamellar structure is formed or incorporated within the monolithic ceramic body, silicon nitride (Si) reacts with the material of the monolithic ceramic body. 3 N 4 A substrate support assembly including a mesh. [Application Example 11] A method for forming a substrate support assembly, The process involves forming a monolithic ceramic body by molding a preform, wherein the preform contains a ceramic material. The preform includes a heater element, The preform includes an RF antenna, One or more power lines are provided within the preform to supply power to the heater element and the RF antenna while they are in use. The preform includes or forms a lamellar structure, wherein the lamellar structure, once formed, includes at least one layer having a thermal conductivity different from that of the monolithic ceramic body. The preform is sintered and Methods that include... [Application Example 12] The method described in Application Example 11, A method further comprising providing the at least one layer on top of the heater element within the monolithic ceramic body. [Application Example 13] The method described in Application Example 11, A method further comprising providing the at least one layer beneath the heater element within the monolithic ceramic body. [Application Example 14] The method described in Application Example 11, A method further comprising embedding or including a ceramic material within at least one of the layers. [Application Example 15] The method described in Application Example 11, A method further comprising including a metallic material within at least one of the layers. [Application Example 16] The method described in Application Example 11, A method further comprising including at least two layers within the lamellar structure, wherein one of the at least two layers has a different thermal conductivity from at least one of the other layers within the lamellar structure. [Application Example 17] The method described in Application Example 11, A method further comprising including at least two layers within the lamellar structure, wherein each of the at least two layers has a different thermal conductivity than the other layers within the lamellar structure. [Application Example 18] The method described in Application Example 11, A method further comprising including at least two layers within the lamellar structure, wherein the thermal conductivity of at least one layer of the lamellar structure is different from the thermal conductivity of the monolithic ceramic body. [Application Example 19] The method described in Application Example 11, A method further comprising including a plate of atmospheric pressure sintered aluminum nitride within the at least one layer of the lamellar structure. [Application Example 20] The method described in Application Example 11, Silicon nitride (Si) is present within the lamellar structure. 3 N 4 Further includes including a mesh of silicon nitride (Si 3 N 4 A method wherein the preform reacts with the material of the monolithic ceramic body when it is sintered.

Claims

1. Monolithic ceramic body, A heater element arranged within the monolithic ceramic body, An RF antenna is placed inside the monolithic ceramic body, The stem supporting the monolithic ceramic body, One or more power lines supplying power to the heater element and the RF antenna, The lamellar structure formed or contained within the monolithic ceramic body and Equipped with, The lamellar structure comprises at least two layers, The first of the two layers is placed on the heater element in use. The second of the two layers is positioned below the heater element in use. Both the first and second layers have a thermal conductivity different from that of the monolithic ceramic body. The stem is positioned below the second layer, The one or more power lines pass through the stem. PCB support assembly.

2. A substrate support assembly according to claim 1, A substrate support assembly comprising at least one layer of the lamellar structure, which includes a ceramic material.

3. A substrate support assembly according to claim 1, A substrate support assembly in which at least one layer of the lamellar structure includes a metallic material or an intermetallic material.

4. A substrate support assembly according to claim 1, A substrate support assembly wherein one of the at least two layers has a different thermal conductivity than at least one of the other layers in the lamellar structure.

5. A substrate support assembly according to claim 4, A substrate support assembly wherein the thermal conductivity of at least one layer of the lamellar structure is different from the thermal conductivity of the monolithic ceramic body.

6. A substrate support assembly according to claim 1, A substrate support assembly wherein each of the at least two layers has a different thermal conductivity than the other layers in the lamellar structure.

7. A substrate support assembly according to claim 1, A substrate support assembly comprising at least one layer of the lamellar structure, which includes a plate of atmospheric pressure sintered aluminum nitride.

8. A substrate support assembly according to claim 1, When the lamellar structure is formed or incorporated within the monolithic ceramic body, silicon nitride (Si) reacts with the material of the monolithic ceramic body. 3 N 4 A substrate support assembly including a mesh.

9. A method for forming a substrate support assembly, The process involves forming a monolithic ceramic body by molding a preform, wherein the preform contains a ceramic material. The preform includes a heater element, The preform includes an RF antenna, The preform may contain or form a lamellar structure, Sintering the aforementioned preform, The lamellar structure comprises at least two layers, wherein the first layer of the at least two layers is provided above the heater element within the monolithic ceramic body, and the second layer of the at least two layers is provided below the heater element, and both the first and second layers have a thermal conductivity different from that of the monolithic ceramic body. The stem supporting the monolithic ceramic body is provided below the second layer, One or more power lines supplying power to the heater element and the RF antenna are passed through the stem, Methods that include...

10. The method according to claim 9, A method further comprising embedding or including a ceramic material as at least one layer of the lamellar structure.

11. The method according to claim 9, A method further comprising including a metallic material as at least one layer of the lamellar structure.

12. The method according to claim 9, A method wherein one of the at least two layers has a different thermal conductivity from at least one of the other layers in the lamellar structure.

13. The method according to claim 9, A method wherein each of the at least two layers has a different thermal conductivity than the other layers in the lamellar structure.

14. The method according to claim 9, A method wherein the thermal conductivity of at least one layer of the lamellar structure is different from the thermal conductivity of the monolithic ceramic body.

15. The method according to claim 9, A method further comprising including a plate of atmospheric pressure sintered aluminum nitride as at least one layer of the lamellar structure.

16. The method according to claim 9, Silicon nitride (Si) is present within the lamellar structure. 3 N 4 The further includes including a mesh of silicon nitride (Si 3 N 4 A method wherein the preform reacts with the material of the monolithic ceramic body when it is sintered.

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