X-ray source and method of operation for the X-ray source

Abstract

The present invention relates to an X-ray source (100; 100a; 100b; 100c) comprising an electron source (110) for providing electrons (e) in the form of an electron beam (es), a target element (120) on which the electrons (e) of the electron beam (es) of the electron source (110) can impinge, and at least one deflection device (140) making it possible to deflect the electron beam (es) generated by the electron source (110) from the direction of propagation, the at least one deflection device ( At least one deflection device (140) is configured to at least intermittently deflect the electron beam (es), such that the trajectory (180) is incident on the target element (120) but is outside the center of the target element (120) or outside the area (150) of the target element (120) where the electron beam (es) would be incident in the case of a propagation direction without deflection, or the at least one deflection device (140) is configured to at least intermittently deflect the electron beam (es), such that the electron beam (es) is not incident on the target element (120).

Description

Technical Field

[0001] The present invention relates to an X-ray source and a method for operating such an X-ray source.

Background Art

[0002] From International Publication No. 99 / 50882, an X-ray tube is known that has an electron source for providing electrons in the form of an electron beam and a target element capable of colliding with the electrons of the electron beam of the electron source. This X-ray source includes at least one deflection device capable of deflecting the electrons of the electron beam within the region of the target element. A control grid having a central through-opening of the electron beam is provided between the electron source and the target element. This control grid enables modulation of the electron beam so that the electron beam can be switched off. However, due to the central opening of the control grid, the electron beam subsequently reaches the target element.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present invention aims to propose an X-ray source and a method of operating such an X-ray source that enables improvement in operation, including during short interruptions.

[0005] This objective is achieved by an X-ray source comprising an electron source for supplying electrons in the form of an electron beam, a target element that can collide with the electrons of the electron beam, and at least one deflection device capable of deflecting the electron beam generated by the electron source from the direction of propagation. According to a first alternative embodiment, the deflection device is configured to deflect the electron beam with respect to the target element at least intermittently outward from the center of the target element, or to deflect the electron beam with respect to the target element outward from the collision region, so that in the case of a propagation direction without deflection, the electron beam would be incident outside the collision region. This makes it possible to reduce the load on the target element in the direction of propagation of the electron beam generated by the electrons when there is no deflection in standby operation or when the operation of the X-ray source is interrupted. This makes it possible to continuously thermally load the target element with the incident electron beam, and as a result, the temperature of the carrier element or anode body is not cooled, or only partially cooled, during a short interruption of the operation of the X-ray source or in a state called standby, but as a result, thermal drift of the target element is avoided, albeit not completely, in subsequent operation.

[0006] According to further alternatives, this objective is achieved by an X-ray source configured such that at least one deflection device deflects the electron beam at least intermittently, thereby preventing the electron beam from entering the target element. As with the first alternative, this configuration offers the advantage of reducing the load on the target material during brief interruptions in the operation of the X-ray tube or in standby mode. [Means for solving the problem]

[0007] An electron beam with an Archimedean helix-following trajectory can be controlled by at least one deflection device. This trajectory along the Archimedean helix, in this case a carrier element, can be realized from inside to outside or outside to inside. The trajectory can preferably be controlled so that it does not enter the center of the target element or into the collision region of the electron beam that lies in the propagation direction of the electron beam of an electron source without deflection.

[0008] In further exemplary embodiments, the electron source is provided to be configured such that electrons, for example in the form of an electron beam, collide with different regions of the target element in a temporally continuous manner. In other words, in further exemplary embodiments, different regions of the target element with different target materials may collide with electrons or an electron beam, for example in a time-division multiplexing scheme.

[0009] In a further exemplary embodiment, the X-ray source is provided to have at least one deflection device for at least intermittent deflection of electrons, for example, an electron beam.

[0010] In further exemplary embodiments, the deflection device may be configured to generate, for example, at least one electric field and / or a magnetic field at least intermittently in order to deflect electrons.

[0011] Preferably, the catching device for the deflected electron beam is provided specifically outside the target element, radially observed outside the target element. This catching device preferably surrounds the electron source and target element, offering the advantage of reducing the load on the glass body of the X-ray source that collides with the vacuum. This catching device may extend only partially or as much as completely around the target element. The catching device may also be provided as consisting of multiple segments positioned at a certain distance from each other outside the region of the target element.

[0012] This catching device is preferably thermally coupled to the target element and / or the anode body. As a result, the energy from the bremsstrahlung or electron beam generated in the catching device can be converted into thermal energy and transferred to the target element and / or the anode body. Specifically, this prevents cooling of the anode body and / or target layer during short interruptions in the operation of the X-ray tube. This makes it possible to prevent its thermal drift.

[0013] An exemplary embodiment relates to an X-ray source having an electron source for supplying electrons and a target element upon which electrons can collide, wherein the target element is provided to have a first region with a first target material and a second region with a second target material different from the first target material. This allows for flexible operation that enables the generation of different types of X-ray emission, i.e., different properties, based on each target material.

[0014] In further exemplary embodiments, the target material is provided to include at least one of the following elements: a) tungsten, b) molybdenum, c) rhodium, and d) chromium. Other elements or materials that can generate X-ray emission when colliding with electrons, for example in the form of an electron beam, can also be used in at least one region of the target element in further exemplary embodiments.

[0015] In further exemplary embodiments, the electron source is configured to provide electrons based on the principles of thermal ion emission and / or field emission.

[0016] In further exemplary embodiments, the X-ray source has an anode body, the anode body containing, for example, copper, or made from copper.

[0017] In further exemplary embodiments, an accelerating voltage for accelerating electrons provided by an electron source, for example, in the direction of the anode body or target element, may be applied between the components of the electron source, such as a coiled filament, and the anode body. In further exemplary embodiments, when accelerated electrons, or an electron beam formed by accelerated electrons, are incident on a target element, the electrons are decelerated by the target material, and as a result, X-ray emission can be generated. Depending on the region of the target element, or based on the target material observed in the region of the target element, the X-ray emission may have different properties, such as intensity and / or spectrum.

[0018] In further exemplary embodiments, the target element is provided to be positioned on the anode body, for example, on at least one surface of the anode body.

[0019] In further exemplary embodiments, the corresponding first target material and / or second target material are provided to be arranged in the form of layers in the first region and / or the second region. In other words, in further exemplary embodiments, the first target material is arranged in the form of layers in the first region of the target element, and / or, in further exemplary embodiments, the second target material is arranged in the form of layers in the second region of the target element.

[0020] In further exemplary embodiments, layers made from a first target material and / or layers made from a second target material are provided to be arranged on an anode body, for example, on at least one surface of the anode body.

[0021] In further exemplary embodiments, the first and / or second regions are provided to be, for example, at least one of the following shapes, i.e., a) semicircular, b) circular, c) annular, and d) sector.

[0022] In further exemplary embodiments, the first region and / or the second region are provided to be, for example, semicircular. In further exemplary embodiments, at least two semicircular regions are provided to be arranged so that their bottom sides (for example, essentially linear, corresponding to the diameter of the semicircle) face each other, so that the two regions together form, for example, a circular region.

[0023] In further exemplary embodiments, it is provided that the first region is circular or annular, the second region is circular or annular, and for example, the second region is arranged coaxially with respect to the first region. As an example, in further exemplary embodiments, the first region may be annular, the second region may likewise be annular or circular, and for example, is arranged radially within the first region, for example, directly adjacent to the inner contour of the first region.

[0024] In further exemplary embodiments, at least one further region is provided with a further target material, for example, a third target material, the third target material being different from the first target material and / or the second target material.

[0025] In further exemplary embodiments, more than three regions may be provided, where appropriate, with further target materials, for example, target materials that are different from one another.

[0026] In further exemplary embodiments, the target element is arranged statically with respect to the electron source.

[0027] In further exemplary embodiments, it is provided that the electron source is configured such that electrons, for example, optionally in the form of an electron beam, collide with the first region and / or the second region of the target element.

[0028] In further exemplary embodiments, at least one deflection device is configured to deflect electrons at least intermittently, such that electrons are provided to impinge, for example, only on the target element in the first region or the second region. As a result, X-ray radiation of the type corresponding to each of the target materials in the selected regions may be generated, for example, optionally.

[0029] In further exemplary embodiments, the deflection device is provided, for example, to generate at least one electric field at least intermittently, the at least one electric field including at least a field component perpendicular to the direction of electron propagation at least locally, for example, a field component coinciding with the longitudinal axis of the X-ray source or a field component parallel to the longitudinal axis of the X-ray source. In further exemplary embodiments, this may be done to deflect along a first dimension or spatial direction and / or along a second dimension or spatial direction.

[0030] In further exemplary embodiments, it is provided that at least one deflection device has one or more deflection tables.

[0031] In further exemplary embodiments, in the case of multiple deflection tables, these deflection tables are provided to be arranged, for example, along the direction of electron propagation, for example toward the target element, or along the longitudinal axis of the X-ray source. In further exemplary embodiments, in the case of multiple deflection tables, these deflection tables are provided to be arranged along the circumferential direction of the electron beam. In further exemplary embodiments, similarly, combinations of variations of the two arrangements described above are possible.

[0032] In a further exemplary embodiment, in the case of multiple deflection tables, it is provided that these deflection tables be used to shift, for example, an electron beam at least approximately parallel to the initial orientation of the deflection table defined, for example, by an electron source. In a further exemplary embodiment, for example, this may be brought about by an electron beam deflected by a first deflection table by a first degree (e.g., a degree that can be characterized by a first angle) with respect to the initial orientation of the deflection table, and by a thus deflected electron beam deflected, for example, in the opposite direction by a second degree (e.g., a degree that can be characterized by a second angle) by a second deflection table located downstream of the first deflection table, so that, after the second deflection, the electron beam is, for example, at least approximately parallel to the initial orientation (an angular deviation of 10° to -10° with respect to the initial orientation is acceptable).

[0033] In further exemplary embodiments, at least one deflection device is provided to be configured to compensate for stray magnetic fields, such as external stray magnetic fields. In further exemplary embodiments, for example, at least one variable characterizing such stray magnetic fields may be set, and based on at least one variable, in further exemplary embodiments, at least one deflection device may be controlled, or the control of at least one deflection device may be influenced so that the stray magnetic fields are compensated for at least partially. As a result, in further exemplary embodiments, for example, the influence of the environment at locally or globally different locations of use may also be reduced or compensated for.

[0034] In a further exemplary embodiment, the deflection device is provided to have, for example, at least two deflection platforms arranged perpendicular to each other and configured differently.

[0035] In further exemplary embodiments, the deflection device is configured to deflect electrons temporally and continuously to different regions of a target element, for example in two dimensions, in order to reduce the average local thermal load of the target element in various regions, for example, by irradiating the electron beam over the entirety of different regions of the target element.

[0036] In further exemplary embodiments, at least one deflection device is configured to deflect electrons at least intermittently, so that electrons do not enter the target element and instead pass radially outside the target element, for example. As a result, the generation of X-ray radiation can be interrupted or minimized at least intermittently, which is useful, in further exemplary embodiments, for example, to control the temperature of the target element.

[0037] In further exemplary embodiments, the X-ray source is provided to be configured to set a first variable that characterizes the voltage applied between two electrodes of a deflection device, at least intermittently. For example, the first variable is generated by the electron beam, for example, depending on the position of the electron beam relative to the deflection device. Based on this first variable, in further exemplary embodiments, conclusions can be drawn, for example, regarding the position of the electron beam relative to the initial orientation ("beam position"). For example, based on the first variable, the presence of, for example, an external stray magnetic field or interference field can also be set.

[0038] Further exemplary embodiments relate to an X-ray tube, for example, for X-ray fluorescence analysis or X-ray fluorescence spectroscopy, using at least one X-ray source according to a plurality of embodiments.

[0039] X-ray fluorescence analysis is a non-destructive method of qualitative and / or quantitative material analysis. It is based on the principle that electrons are emitted from the inner shells of atoms in a material sample by irradiating the sample with multi-wavelength X-ray radiation. As a result, electrons from higher energy levels of atoms can descend to lower energy levels corresponding to the inner shells, generating fluorescence radiation specific to the material sample or its atoms. This can be recorded, for example, by a detector, providing information about the elemental composition of the material sample.

[0040] In further exemplary embodiments, X-ray fluorescence analysis of a material sample is performed using an X-ray tube according to an embodiment of the present invention.

[0041] In further exemplary embodiments, X-ray fluorescence analysis using an X-ray tube according to embodiments of the present invention is used to measure, for example, the thickness of thin layers and layer systems.

[0042] A fundamental objective of the present invention is further realized by a method for operating an X-ray source, the X-ray source comprising an electron source for supplying electrons in the form of an electron beam, a target element for collision with the electrons of the electron beam, and at least one deflection device capable of deflecting the electron beam of the electron source in the propagation direction, and according to the first alternative, the at least one deflection device is controlled such that the electron beam is deflected at least intermittently with respect to the target element along with a trajectory, the trajectory located outside the center of the target element, or outside the collision region on the target element where the electron beam of the electron source is incident specifically in the propagation direction without deflection. As a result, the load on the target material in the center or collision region can be reduced, specifically only during brief interruptions in the operation of the X-ray source, or in standby mode.

[0043] An alternative configuration of this method provides for controlling at least one deflection device so that the electron beam is not incident on the target element at least intermittently.

[0044] A preferred configuration of this method provides that at least one deflection device is controlled by at least one conversion device. At least two deflection devices are controlled to control the electron beam along with a trajectory following the Archimedes spiral on the target element. When two deflection devices are used, these devices are preferably aligned perpendicular to each other. This trajectory allows for even loading of the target element outside the center, specifically avoiding cooling of either of the target elements during brief interruptions in operation to generate X-rays.

[0045] Alternatively, preferably, the deflection device is provided to be controlled so that the electron beam is incident on a catching device for the electron beam outside the target element. The catching device is preferably coupled to the target element and / or anode body so as to allow at least locally the transfer of thermal energy from the catching device to the target element and / or anode body.

[0046] Further exemplary embodiments relate to an X-ray source having an electron source for supplying electrons and a target element to which electrons can collide, wherein the target element has a first region with a first target material and a second region with a second target material different from the first target material, and the method includes, for example optionally, having electrons collide with the first and / or second regions of the target element, for example, in the form of an electron beam.

[0047] In further exemplary embodiments, collision is provided to include, for example, in the form of an electron beam, electrons successively colliding with different regions of a target element over time.

[0048] In further exemplary embodiments, the X-ray source is provided to have at least one deflection device for at least intermittent deflection of electrons, and the method includes at least one of the following elements: a) at least intermittent deflection of electrons using at least one deflection device for a first region of a target element such that, for example, electrons are incident mainly on, for example, only a first region; b) at least intermittent deflection of electrons using at least one deflection device for a second region of a target element such that, for example, electrons are incident mainly on, for example, only a second region; c) at least intermittent deflection of electrons using at least one deflection device for at least one further region of a target element different from the first and second regions such that, for example, electrons are incident mainly on, for example, only at least one further region; d) at least intermittent deflection of electrons using at least one deflection device such that, for example, a considerable number of electrons are not incident on the target element but pass radially outside the target element, for example; e) continuous deflection of electrons for different regions of a target element, for example, in one or two dimensions.

[0049] In further exemplary embodiments, the method is provided to optionally include setting information associated with, for example, an external stray magnetic field having, for example, the strength and / or direction of the magnetic field, and compensating for the stray magnetic field at least intermittently and / or locally using at least one deflection device.

[0050] In further exemplary embodiments, the method is provided to further include setting a first variable that characterizes the voltage applied between two electrodes of a deflection device, and optionally operating an X-ray source, e.g., at least one deflection device, based on the first variable.

[0051] In a further exemplary embodiment, it is provided that two electrodes collide at least intermittently, for example, in a first time domain, by a control voltage, to deflect electrons, and a first variable is set at least intermittently, for example, in a second time domain that lies outside the first time domain.

[0052] In further exemplary embodiments, the first variable may be set using electrodes of a first deflection device, and at least one further deflection device may be used to simultaneously set the first variable, or at least temporarily overlap the setting of the first variable, and to deflect the electron beam based on the first variable, for example, for the purpose of compensating for stray magnetic fields.

[0053] In further exemplary embodiments, the operation of the X-ray source may therefore also be adjusted, for example, for the purpose of closed-loop adjustment, for example, by setting a first variable and controlling at least one deflection platform that can be used to deflect the electron beam, for example, based on the first variable.

[0054] Further exemplary embodiments relate specifically to a device for controlling an X-ray source according to a plurality of embodiments, the device being configured to perform a method according to the plurality of embodiments.

[0055] Further exemplary embodiments relate to a computer-readable storage medium that, when executed by a computer, contains commands that cause the computer to perform methods according to one of the embodiments.

[0056] Further exemplary embodiments relate to a computer program that, when executed by a computer, includes commands that cause the computer to perform actions according to one of the embodiments.

[0057] Further exemplary embodiments relate to data transmission signals that transmit and / or characterize computer programs according to multiple embodiments.

[0058] Further exemplary embodiments relate to a method of use of an X-ray source according to a plurality of embodiments, and / or an X-ray tube according to a plurality of embodiments, and / or a method according to a plurality of embodiments, and / or an apparatus according to a plurality of embodiments, and / or a computer-readable storage medium according to a plurality of embodiments, and / or a computer program according to a plurality of embodiments, and / or a method of use of a data transmission signal according to a plurality of embodiments, wherein the method of use includes the following elements, namely, a) providing different types of X-ray radiation that are different from each other, for example with respect to the intensity and / or spectrum of the X-ray radiation, for example, to provide at least two different types of X-ray radiation in a timely and / or alternate manner, b) for example The application relates to at least one of the following: a) optimizing the X-ray source and / or X-ray tube for applications that can be specified in the area of ​​X-ray fluorescence analysis; c) performing X-ray fluorescence analysis; d) controlling, for example reducing, the thermal load on a target element in the axial region; e) extending the service life or durability of a target element for example for precision applications; f) reducing, for example interrupting, the generation of X-ray radiation; g) performing individual use of at least one area of ​​the target element; h) compensating for stray magnetic fields or interference fields, for example, external stray magnetic fields or interference fields; i) irradiating the target element with electrons or an electron beam; j) evaluating the beam position of an electron beam, for example performing diagnostics.

[0059] Further features, applicability, and advantages of the exemplary embodiments are provided in the following description of the exemplary embodiments shown in the drawings. All features described or shown individually or in any desired combination, regardless of their summary or backreference in the claims, and each, regardless of their description and depiction in the description and drawings, form the subject matter of the exemplary embodiments. [Brief explanation of the drawing]

[0060] [Figure 1] A simplified block diagram of an exemplary embodiment is schematically shown. [Figure 2] A simplified block diagram illustrating a further exemplary embodiment is schematically shown. [Figure 3A] A schematic plan view of the target element is shown according to a further exemplary embodiment. [Figure 3B] A schematic plan view of the target element is shown according to a further exemplary embodiment. [Figure 3C] A schematic plan view of the target element is shown according to a further exemplary embodiment. [Figure 4] A schematic plan view of the target element is shown according to a further exemplary embodiment. [Figure 5] A schematic side view of an X-ray source according to a further exemplary embodiment is shown. [Figure 6] A schematic side view of an X-ray source according to a further exemplary embodiment is shown. [Figure 7] A schematic representation of a deflection device is shown by further exemplary embodiments. [Figure 8] A schematic representation of a deflection device is shown by further exemplary embodiments. [Figure 9] A simplified block diagram illustrating a further exemplary embodiment is schematically shown. [Figure 10] A schematic plan view of the target element with electron beam guidance is shown. [Figure 11] A simplified flowchart of the method according to further exemplary embodiments is schematically shown. [Figure 12] A simplified flowchart of the method according to further exemplary embodiments is schematically shown. [Figure 13] A simplified flowchart of the method according to further exemplary embodiments is schematically shown. [Figure 14] A simplified flowchart of the method according to further exemplary embodiments is schematically shown. [Figure 15] A schematic time diagram is shown in a further exemplary embodiment. [Figure 16] A simplified block diagram illustrating a further exemplary embodiment is schematically shown. [Figure 17] The following schematic diagram illustrates the modes of use by further exemplary embodiments. [Modes for carrying out the invention]

[0061] An exemplary embodiment, referring to Figure 1, relates to an X-ray source 100 having, for example, an electron source 110 for providing electrons e in the form of an electron beam es, and a target element 120 that can collide with the electrons e.

[0062] The exemplary propagation direction of an electron e or electron beam passes through the spatial direction corresponding to the Z-axis z (or the direction parallel to z of the Z-axis), which is provided symbolically in Figure 1. The spatial direction perpendicular to the exemplary propagation direction z is indicated by the y of the y-axis, which is configured perpendicularly as an example in Figure 1.

[0063] When the electron beam es is in a propagation direction without deflection, the electron beam es generated by the electron source 110 is incident on the target element 120 in a collision region 150. This collision region 150 can be located at the center of the target element 120 or outside its center. This is determined by the alignment of the electron source 110 with the target element 120.

[0064] The target element 120 has a first region 122a with a first target material TM-1 and a second region 122b with a second target material TM2 that is different from the first target material TM-1. This allows for flexible operation that enables the generation of different types of X-ray emission RS, i.e., different properties, based on, for example, each target material TM-1 and TM-2.

[0065] In further exemplary embodiments, target materials TM-1, TM-2 are provided to include at least one of the following elements: a) tungsten, b) molybdenum, c) rhodium, and d) chromium. Other elements or materials that can generate X-ray emission RS when colliding with electrons e in the form of an electron beam es can also be used in at least one region 122a, 122b of the target element 120, for example, in further exemplary embodiments.

[0066] In further exemplary embodiments, the electron source 110 is configured to provide electrons e based on the principles of thermal ion emission and / or field emission. For example, for this purpose, the electron source 110 may have a coiled filament 111 (not shown in Figure 1), which is also referred to, for example, Figure 5.

[0067] In a further exemplary embodiment, as shown in Figure 2, the X-ray source 100a has an anode body 130, the anode body 130 containing, for example, copper, or made from copper.

[0068] In further exemplary embodiments, an accelerating voltage (not shown for the sake of clarity) may be applied, for example, in the direction of the anode body 130 or the target element 120, i.e., between the components of the electron source 110, e.g., the coiled filament 111 (Figure 5), and the anode body 130 (Figure 2), for example, at least roughly parallel to the z-axis in Figures 1 and 2, to accelerate electrons e provided by, for example, the electron source 110. When the accelerated electrons e, or the electron beam es formed by the accelerated electrons e, is incident on the target element 120, the electrons e are decelerated by the target materials TM-1, TM-2, and as a result, X-ray emission RS (Figure 1) can be generated. Depending on the regions 122a, 122b of the target element 120, or based on the target materials TM-1, TM-2 found in the regions 122a, 122b of the target element 120, the X-ray emission RS may have different properties, such as intensity and / or spectrum.

[0069] In a further exemplary embodiment, Figure 2 provides that the target element 120 is positioned on the anode body 130, for example, on at least one surface 130a of the anode body 130.

[0070] In further exemplary embodiments, it is provided that the corresponding first target material TM-1 and / or second target material TM-2 are arranged in the form of layers 124a, 124b in a first region 122a (Figure 1) corresponding to, for example, y1 in a first y-coordinate range, and / or in a second region 122b (Figure 1) corresponding to, for example, y2 in a second y-coordinate range, according to Figure 2. In other words, in further exemplary embodiments, the first target material TM-1 is arranged in the form of layer 124a in the first region 122a of the target element 120, and / or, in further exemplary embodiments, the second target material TM-2 is arranged in the form of a second layer 124b in the second region 122b of the target element 120.

[0071] In further exemplary embodiments, for example, different regions 122a, 122b or layers 124a, 124b with different target materials TM-1, TM-2 can be considered to be in different vertical coordinate ranges y1, y2 of surface 130a in Figures 1 and 2, and as a result, the electron beam es can collide with either the first region 122a and / or the second region 122b by the corresponding deflection.

[0072] In further exemplary embodiments, the electron beam es may also be deflected or directed, for example, at least intermittently, to a boundary region GB of two regions 122a and 122b (for example, extending perpendicular to the plane in the drawing of Figure 2), so that both regions 122a and 122b collide simultaneously with the electron beam es.

[0073] In further exemplary embodiments, it is provided that a layer 124a made from a first target material TM-1 and / or a layer 124b made from a second target material TM-2 are arranged on the anode body 130, for example, on at least one surface 130a of the anode body 130.

[0074] In further exemplary embodiments, referring to Figures 3A, 3B, and 3C, the first region 122a and / or the second region 122b are provided to be, for example, at least one of the following shapes, i.e., a) semicircular, b) circular, c) annular, and d) sector.

[0075] As an example, Figure 3A shows a schematic plan view of target element 120a, where two semicircular regions 122a and 122b, each with different target materials TM-1 and TM-2, are arranged adjacent to each other along the x-axis in Figure 3A.

[0076] For example, Figure 3B shows a schematic plan view of target element 120b, where two semicircular regions 122a and 122b, each accompanied by different target materials TM-1 and TM-2, are arranged adjacent to each other along the y-axis in Figure 3B.

[0077] In further exemplary embodiments, referring to Figures 3A and 3B, two semicircular regions 122a, 122b are arranged so that their bottom sides (e.g., essentially linear, corresponding to the diameter of the semicircle) face each other, and as a result, the two regions 122a, 122b together form, for example, a circular region, which in further exemplary embodiments may cover, for example, the entire surface 130a (Figure 2).

[0078] In a further exemplary embodiment, with respect to 120c in Figure 3C, the first region 122a is provided to be circular or annular, and the second region 122b is circular or annular, for example, the second region is arranged coaxially with respect to the first region. For example, in a further exemplary embodiment, the first region 122a may be annular, and the second region 122b may similarly be annular or circular, for example, arranged radially within the first region 122a and, for example, directly adjacent to the internal contour of the first region 122a.

[0079] In a further exemplary embodiment, referring to the target element 120d in Figure 4, at least one further region 122c is provided with a further target material, for example, a third target material TM-3, wherein the third target material TM-3 is different from the first target material and / or the second target material.

[0080] In further exemplary embodiments, more than three regions 122a, 122b, and 122c (not shown) may be provided with additional target materials, such as different target materials, where applicable.

[0081] In further exemplary embodiments, the target elements 120, 120a, 120b, 120c, and 120d are statically positioned relative to the electron source.

[0082] In a further exemplary embodiment, as shown in Figure 2, the electron source 110 is provided to be configured, for example, optionally, to cause electrons e to collide with a first region 122a and / or a second region 122b of the target element 120, for example, in the form of an electron beam es.

[0083] In a further exemplary embodiment, the electron source 110 is provided to be configured such that electrons e, for example in the form of an electron beam es, collide with different regions 122a, 122b, and 122c of the target element 120 in a temporally continuous manner. In other words, in a further exemplary embodiment, different regions 122a, 122b, and 122c of the target element 120, with different target materials TM-1, TM-2, etc., may collide with electrons e or electron beam es, for example in a time-division multiplexing scheme.

[0084] In a further exemplary embodiment, referring to Figure 5, it is provided that the X-ray source 100b has at least one deflection device 140 for at least intermittent deflection of, for example, electrons e, or, for example, an electron beam es. In a further exemplary embodiment, the deflection device 140 may be configured to generate at least one electric field and / or magnetic field at least intermittently to deflect, for example, electrons e.

[0085] In further exemplary embodiments, at least one deflection device 140 is configured to deflect electrons e at least intermittently, so that electrons e are incident only on the target element 120 in, for example, a first region 122a (Figure 1) or a second region 122b. As a result, X-ray emission RS of the type corresponding to the respective target materials TM-1, TM2 in the selected regions 122a, 122b can be generated, for example, arbitrarily.

[0086] In further exemplary embodiments, the deflection device 140 is provided, for example, to generate at least one electric field at least intermittently, the at least one electric field including at least a field component perpendicular to the electron propagation direction z (Figure 5), for example, a field component coinciding with the longitudinal axis of the X-ray source 100b or a field component parallel to the longitudinal axis of the X-ray source 100b. In further exemplary embodiments, this may be done to deflect along a first dimension or spatial direction y perpendicular to the plane of the drawing in Figure 5, for example, and / or to deflect along a second dimension or spatial direction.

[0087] In further exemplary embodiments, it is provided that at least one deflection device 140 has one deflection platform 141 (Figure 5), or, referring to the deflection device 140a in Figure 6, has a plurality of deflection platforms 141, 142.

[0088] For example, in a further exemplary embodiment, the first voltage U A This can be applied at least intermittently to the electrodes 141a and 141b of the deflection platform 141 in Figure 5 in order to generate the electric field with a field component along the y-axis.

[0089] In a further exemplary embodiment, referring to the X-ray source 100c shown in Figure 6, if there are multiple deflection stages 141, 142, these deflection stages are provided to be positioned, for example, along the electron propagation direction z, toward, for example, the target element 120.

[0090] In a further exemplary embodiment, referring to the deflection unit 140b in Figure 7, if there are multiple deflection stages 141', 142', these deflection stages are provided to be arranged along the circumferential direction of the electron beam.

[0091] In further exemplary embodiments, similar combinations of variations of the two arrangements described above are possible.

[0092] In a further exemplary embodiment, referring to Figure 6, in the case of multiple deflection tables 141, 142, these deflection tables are provided to be used to shift, for example, an electron beam es at least approximately parallel to the initial orientation of the deflection table defined by the electron source 110 (for example, horizontal to the right side in Figure 6). In a further exemplary embodiment, for example, this may be brought about by an electron beam es deflected by a first deflection table 141 by a first degree (for example, a degree that can be characterized by a first angle α1) with respect to the initial orientation of the deflection table, and then by a second deflection table 142 located downstream of the first deflection table 141, for example, by a second degree (for example, a degree that can be characterized by a second angle α2) in the opposite direction, so that after the second deflection, the electron beam is, for example, at least approximately parallel to the initial orientation (an angular deviation of 10° to -10° with respect to the initial orientation is acceptable). In a further exemplary embodiment, for example, α2 = -α1.

[0093] In a further exemplary embodiment, referring to Figure 5, it is provided that at least one deflection device 140 is configured to compensate for a stray magnetic field SF, for example, an external stray magnetic field SF. In a further exemplary embodiment, for example, at least one variable characterizing such a stray magnetic field SF may be set, and based on at least one variable, in a further exemplary embodiment, at least one deflection device 140 may be controlled, or the control of at least one deflection device 140 may be influenced such that the stray magnetic field SF is at least partially compensated. As a result, in a further exemplary embodiment, for example, the influence of the environment at a locally or globally different location of use may also be reduced or compensated.

[0094] In a further exemplary embodiment, as shown in Figure 7, at least one deflection device 140b is provided to have, for example, at least two deflection tables 141', 142' arranged perpendicular to each other and configured differently. As a result, in a further exemplary embodiment, for example, any desired Cartesian coordinate point on the target element 120 can be specified, i.e., it can be collided with an electron beam es corresponding to a point in the xy-plane, for example. For this purpose, in a further exemplary embodiment, the electrodes of the deflection tables 141', 142' are controlled by corresponding control voltages or deflection voltages Ux, Uy.

[0095] In further exemplary embodiments, the deflection devices 140, 140a, 140b are configured to continuously deflect electrons e over time to different regions 122a, 122b of the target element 120, for example in one-dimensional and / or two-dimensional x,y (Figure 7), for example, to reduce the average local thermal load of the target element 120 in various regions 122a, 122b, and to irradiate the electron beam es over the entire different regions 122a, 122b of the target element 120, for example, by fluctuating the deflection voltages Ux,Uy. In further exemplary embodiments, such an irradiation ring may be implemented for a standby mode, for example, in which X-ray emission is not used for measurement but is intended to conserve the target element 120.

[0096] In further exemplary embodiments, the beam current of the electron beam es may vary; for example, in an optional standby mode, the beam current may decrease, while in a measurement mode, for example with respect to the standby mode, the beam current may increase.

[0097] In further exemplary embodiments, at least one deflection device 140, 140a, 140b is configured to deflect electrons at least intermittently, so that electrons do not enter the target element 120 (Figure 7) and instead pass radially outside the target element 120, for example, so that the electrons reach the peripheral area U (Figure 3A) of the target element 120. As a result, the generation of X-ray radiation can be interrupted or minimized at least intermittently, which is useful in further exemplary embodiments, for example, to control the temperature of the target element 120.

[0098] In a further exemplary embodiment, as shown in Figure 8, the X-ray source is provided to be configured to set a first variable G1 that characterizes the voltage applied between two electrodes 141a, 141b of the deflection device 140c, at least intermittently. For example, the first variable G1 is generated by the electron beam, for example, depending on the position of the electron beam relative to the deflection device 140c. Based on this first variable G1, in a further exemplary embodiment, conclusions can be drawn, for example, regarding the position of the electron beam es with respect to the initial orientation ("beam position"). For example, based on the first variable G1, the presence of an external stray magnetic field or interference field SF can also be set, for example (Figure 5).

[0099] In further exemplary embodiments, for example, a differential amplifier or operational amplifier DV or some other amplification device may be provided to set the first variable G1. Optionally, a measuring device ME may also be provided to quantitatively detect the first variable G1 and, for example, supply the first variable G1 to the analog input of a control device.

[0100] Further exemplary embodiments, as shown in Figure 9, relate to an X-ray tube 10 using at least one X-ray source 100 according to multiple embodiments, for example, X-ray fluorescence analysis or X-ray fluorescence spectroscopy.

[0101] Figure 9 shows that the first type of X-ray emission RS1 or the second type of X-ray emission RS2 can optionally be generated using the X-ray tube 10 or X-ray source 100 by, for example, one of the regions 122a, 122b (Figure 1) of the target element 120 that collides with the electron beam es (Figure 1).

[0102] In Figure 9, block arrow es1 symbolically represents an operating state in which the electron beam es is directed, for example, to a first region 122a of the target element 120 with a first target material TM-1, and a first type of X-ray emission RS1 is generated. Dot block arrow es2 symbolically represents an operating state in which the electron beam is directed, for example, to a second region 122b of the target element 120 with a second target material TM-2, and a second type of X-ray emission RS2 is generated.

[0103] The block arrow es3 in Figure 9 symbolically represents a further operational state in which the electron beam es is deflected so as not to enter the target element 120, resulting in the deactivation or minimization of X-ray emission.

[0104] In the embodiment of the X-ray tube 10 shown in Figure 9, a catching device 160 may preferably also be provided. This catching device 160 serves to reduce the emitted bremsstrahlung X-ray radiation. This catching device 160 may extend only partially around the target element 120. Alternatively, the catching element 160 may also extend along the entire outer circumference of the target element 120. Multiple catching devices 160 may also be configured to be dispersed at a constant distance from each other over the entire circumference of the target element 120.

[0105] Advantageously, the catching device 160 is thermally coupled to the target element 120 and / or the anode body 130. The interface 170 for thermal coupling may extend at least partially or completely between the catching device 160 and the target element 120 and / or the anode body 130.

[0106] In further exemplary embodiments, X-ray fluorescence analysis of a material sample (not shown) is performed using an X-ray tube 10 according to an embodiment of the present invention.

[0107] In further exemplary embodiments, X-ray fluorescence analysis using an X-ray tube 10 according to an embodiment of the present invention is used to measure, for example, the thickness of thin layers and layer systems.

[0108] Specifically, in the case of the X-ray tube 10 shown in Figure 9, the control and deflection of the electron beam es by the X-ray source 100 may also be performed such that, instead of electron beams es2 and es3, electron beam es1 corresponding to electron beam es is controlled together with its trajectory 180, resulting in the target element 120 being struck at a location other than the center of the target element 120 or the collision region 150 of the target element 120. These do not intersect with at least one deflection device 140 of the controlled trajectory 180 of electron beam es1. This collision region 150 of the target element 120 may be a region of electron beam es that is not deflected and exists in the propagation direction of the electron beam es generated by the electron source 110. In other words, the electron beam es generated by the electron source 110 is incident on the collision region 150 in its propagation direction without any deflection. The controlled trajectory 110 of electron beam es1 may correspond to the trajectory of an Archimedean spiral. The trajectory 110 can here be from outside to inside or from inside to outside. Alternatively, the free shape of the trajectory within the region of the target element 120 may also be controllable by at least one deflection device 140 without intersecting the collision region 150. The free shape of the trajectory can be understood as any desired path that deviates from a trajectory following the Archimedes spiral.

[0109] A further exemplary embodiment, shown in Figure 11, relates to a method for operating an X-ray source 100 (Figure 1) having an electron source 110 for providing electrons e and a target element 120 that can collide with the electrons e, wherein the target element 120 has a first region 122a with a first target material TM-1 and a second region 122b with a second target material TM-2 different from the first target material TM-1, and the method includes, for example optionally, having electrons e collide with the first region 122a and / or the second region 122b of the target element 120 (Figure 11).

[0110] In further exemplary embodiments, collision 200 is provided to include, for example, in the form of an electron beam, electrons successively in time colliding with different regions 122a, 122b of the target element 120.

[0111] In further exemplary embodiments, step 200 provides an optional step 202 relating to the use of the generated X-ray emission RS1,RS2, if applicable.

[0112] In a further exemplary embodiment, Figure 12, the X-ray source is provided to have at least one deflection device 140 for at least intermittent deflection of electrons e, and the method comprises the following elements: a) at least intermittent deflection 210a of electrons e using at least one deflection device 140 with respect to a first region 122a (Figure 1) of the target element 120 so that, for example, electrons e are incident mainly, for example, only on a first region 122a; b) at least intermittent deflection 210b of electrons e using at least one deflection device 140 with respect to a second region 122b of the target element 120 so that, for example, electrons e are incident mainly, for example, only on a second region 122b (Figure 12); c) for example, electrons e mainly, for example, at least one The method includes at least one of the following: d) at least intermittent deflection 210c of electrons e, using at least one deflection device 140 for at least one further region 122c (Figure 4) of the target element 120d, which is different from the first region 122a and the second region 122b, so that electrons e are incident only on the further region 122c; d) at least intermittent deflection 210d of electrons e, using at least one deflection device 140 so that electrons, for example a considerable number of electrons, are not incident on the target element 120, but pass radially outside the target element 120, for example; e) continuous deflection 212 of electrons e for different regions 122a, 122b of the target element 120, for example in one-dimensional or two-dimensional x,y (Figure 7).

[0113] In a further exemplary embodiment, as shown in Figure 13, the method is further provided to optionally include setting information SFI associated with, for example, an external stray magnetic field SF having, for example, the strength and / or direction of the magnetic field 220, and compensating for the stray magnetic field SF at least intermittently and / or locally using at least one deflection device 140 222.

[0114] In a further exemplary embodiment, as shown in Figure 14, the method is further provided to include setting a first variable G1 that characterizes the voltage applied between two electrodes 141a, 141b of a deflection device 140c (Figure 8) 230, and optionally operating an X-ray source, e.g., at least one deflection device 140, based on the first variable G1 232 (Figure 14).

[0115] In a further exemplary embodiment, as shown in Figure 15, two electrodes 141a, 141b (Figure 8) are provided to collide at least intermittently, for example, in a first time domain ZB1 (Figure 15) by a control voltage to deflect electrons e, and a first variable G1 is set at least intermittently, for example, in a second time domain ZB2 located outside the first time domain ZB1.

[0116] In further exemplary embodiments, the first variable G1 may be set using the electrodes of the first deflection device 141 (Figure 6), and at least one further deflection device 142 may be used to simultaneously set the first variable G1, or at least temporarily overlap the setting of the first variable G1, and to deflect the electron beam es based on the first variable G1, for example, for the purpose of compensating for a stray magnetic field SF.

[0117] In further exemplary embodiments, the operation of the X-ray source can therefore also be adjusted, for example, for the purpose of closed-loop adjustment, for example, by setting a first variable G1 (Figure 14) (see block 230) and controlling at least one deflection stage 142 (Figure 6) that can be used to deflect the electron beam es, which is controlled or operated, for example, particularly based on the first variable G1 (see optional block 232 in Figure 14).

[0118] A further exemplary embodiment, shown in Figure 16, specifically relates to a device 300 for controlling an X-ray source according to multiple embodiments, wherein the device 300 is configured to perform methods according to multiple embodiments.

[0119] The apparatus 300 includes, for example, a computer 302 having at least one core 302a, a memory device 304 assigned to the computer 302, the memory device 304 for at least one intermittent storage of the following elements, namely, a) data DAT, and b) a computer program PRG for performing a method according to multiple embodiments.

[0120] In a further preferred embodiment, the storage device 304 has volatile memory (e.g., working memory (RAM)) 304a and / or non-volatile memory (e.g., flash EEPROM) 304b.

[0121] In further exemplary embodiments, the computer 302 has at least one of the following elements, namely, a microprocessor (μP), a microcontroller (μC), an application-specific integrated circuit (ASIC), a system-on-a-chip (SoC), a programmable logic module (e.g., FPGA, field-programmable gate array), hardware circuitry, or a graphics processing unit (GPU), or is configured as at least one of these elements.

[0122] Further exemplary embodiments relate to a computer-readable storage medium SM that, when executed by computer 302, includes a command PRG that causes computer 302 to perform a method according to one of the embodiments.

[0123] Further exemplary embodiments relate to a computer program PRG which, when the program is executed by the computer 302, includes commands that cause the computer 302 to perform a method according to one of the embodiments.

[0124] Further exemplary embodiments relate to a data transmission signal DCS that characterizes and / or transmits a computer program PRG according to several embodiments. The data transmission signal DCS can be transmitted, for example, via an optional data interface 306 of the device 300.

[0125] In further exemplary embodiments, the data interface 306 may be used to receive, for example, a first variable (Figure 8) or a variable derived therefrom, and / or to transmit a control signal SS to, for example, at least one deflection device 140, 140a, 140b, 140c. Optionally, at least one amplification level (not shown) may be provided to convert the control signal SS to a corresponding high deflection voltage.

[0126] By transmitting a corresponding control signal SS, the device 300 can, in a further exemplary embodiment, control which type of X-ray emission RS1, RS2 is generated, or at least intermittently deactivate the generation of X-ray emission, or compensate for any stray magnetic field SD that may be present.

[0127] Further exemplary embodiments, as shown in Figure 17, relate to a method of use 400 of an X-ray source 100, 100a, 100b, 100c according to a plurality of embodiments, and / or an X-ray tube 10 according to a plurality of embodiments, and / or a method of use 300 according to a plurality of embodiments, and / or a computer-readable storage medium SM according to a plurality of embodiments, and / or a computer program PRG according to a plurality of embodiments, and / or a data transmission signal DCS according to a plurality of embodiments, wherein the method of use 400 includes the following elements, namely, a) providing different types of X-ray emissions RS1, RS2 that are different from each other in terms of intensity and / or spectrum, for example, to provide at least two different types of X-ray emissions sequentially and / or alternately in time 402, b) for example, X-ray fluorescence analysis 404) optimizing the X-ray source and / or X-ray tube for applications that can be specified at the rear, and at least one of the following: c) performing X-ray fluorescence analysis 406, d) controlling the thermal load of the target element 120 in, for example, axial region 122-AB (Figure 4), e) extending the service life or durability of the target element 120 for, for example, precision applications 410 (Figure 17), f) reducing the generation of X-ray radiation 412, e.g. interrupting it, g) performing individual use of at least one region 122a of the target element 120 414, h) compensating for stray magnetic fields SF or interference fields, e.g., external stray magnetic fields SF or interference fields 416, i) irradiating the target element 120 with electrons e or an electron beam es 417, j) evaluating the beam position of the electron beam es 418, e.g., performing diagnostics 418a.

Claims

1. The system comprises an electron source (110) for providing electrons (e) in the form of an electron beam (es), a target element (120) capable of colliding with the electrons (e) of the electron beam (es) of the electron source (110), and at least one deflection device (140) capable of deflecting the electron beam (es) generated by the electron source (110) from the direction of propagation, At least one catching device (160) for the electron beam (es) is provided outside the target element (120), At least one of the catching devices (160) is an X-ray source (100; 100a; 100b; 100c) thermally coupled to the target element (120), At least one of the deflection devices (140) is configured to deflect the electron beam (es) at least intermittently, such that when not deflected, the electron beam (es) is incident on the center of the target element (120) or the collision region (150) of the target element (120), and when deflected, it is incident on the outside of the center of the target element (120) or the outside of the collision region (150), or An X-ray source (100; 100a; 100b; 100c) wherein at least one of the deflection devices (140) is configured to deflect the electron beam (es) at least intermittently, so that the electron beam (es) is incident on the target element (120) when not deflected and on the catching device (160) when deflected.

2. At least one of the deflection devices (140) is configured to deflect the electron beam (es) at least intermittently such that the position at which the electron beam (es) is incident on the target element (120) follows a specific trajectory controlled by the deflection device (140), or to deflect the electron beam (es) so that the electron beam (es) is incident on individual regions (122a, 122b, 122c) of the target element (120), or to deflect the electron beam (es) on different regions of the target element (120) The X-ray source (100; 100a; 100b; 100c) according to claim 1, which is configured to continuously deflect the electron beam (es) so as to incident on a region (122a, 122b, 122c), but does not irradiate the entirety of the different regions (122a, 122b, 122c) of the target element (120) in the collision region (150) of the target element (120).

3. The X-ray source (100; 100a; 100b; 100c) according to claim 1, wherein at least one of the deflection devices (140) is configured to deflect the electron beam (es) at least intermittently, so that the electron beam (es) passes radially outside the target element (120).

4. The X-ray source (100; 100a; 100b; 100c) according to claim 1, further comprising an anode body (130), wherein at least one catching device (160) extends at least partially along the outer circumference of the target element (120) and / or the anode body (130), and / or is thermally coupled to the target element (120) and the anode body (130).

5. The target element (120) has a first region (122a) with a first target material (TM-1) and a second region (122b) with a second target material (TM-2) different from the first target material (TM-1), wherein the target materials (TM-1, TM-2) include at least one of the following elements: a) tungsten, b) molybdenum, c) rhodium, and d) chromium, according to claim 1 (100; 100a; 100b; 100c).

6. The X-ray source (100; 100a; 100b; 100c) according to claim 1, having an anode body (130), the anode body (130) containing or made of copper, and the target element (120) being positioned on the anode body (130).

7. The first target material (TM-1) and / or the second target material (TM-2) are arranged in the form of layers (124a, 124b) on the anode body (130) in the first region (122a) and / or the second region (122b), The first region (122a) and / or the second region (122b) are at least one of the following shapes: a) semicircular, b) circular, c) annular, d) sector, or The first region (122a) and the second region (122b) are each semicircular, or The X-ray source (100; 100a; 100b; 100c) according to claim 5, wherein the first region (122a) and the second region (122b) are circular or annular, and the second region (122b) is arranged coaxially with respect to the first region (122a).

8. An X-ray source (100; 100a; 100b; 100c) according to claim 5 is provided, comprising at least one further region (122c) with a third target material (TM-3), wherein the third target material (TM-3) is different from the first target material (TM-1) and / or the second target material (TM-2).

9. The X-ray source (100; 100a; 100b; 100c) according to claim 1, wherein the electron source (110) is configured to cause electrons (e) to collide with different regions (122a, 122b, 122c) of the target element (120) in a continuous manner over time.

10. The X-ray source (100; 100a; 100b; 100c) according to claim 1, wherein at least one of the deflection devices (140) has a deflection stage (141) or a plurality of deflection stages (141, 142).

11. At least one of the deflection devices (140) is configured to compensate for stray magnetic fields (SF), and / or The X-ray source (100; 100a; 100b; 100c) according to claim 8, wherein at least one of the deflection devices (140) has at least two differently configured deflection stages (141', 142').

12. The X-ray source (100; 100a; 100b; 100c) according to claim 1, configured to set at least intermittently a first variable (G1) that characterizes the voltage applied between two electrodes (141a, 141b) of the deflection device (140).

13. An X-ray tube (10) for X-ray fluorescence analysis, provided in a closed tube, using at least one X-ray source (100; 100a; 100b; 100c) according to claim 1.

14. The X-ray tube (10) is a glass tube, according to claim 13.

15. A method for operating an X-ray source (100; 100a; 100b; 100c), comprising: an electron source (110) for providing electrons (e) in the form of an electron beam (es); a target element (120) that collides with the electrons (e) of the electron beam (es); and a catching device (160) positioned outside the target element (120), wherein at least one of the catching devices (160) is thermally coupled to the target element (120), At least one deflection device (140) deflects the electron beam (es) at least intermittently, so that when the electron beam (es) is not deflected, it is incident on the center of the target element (120) or the collision region (150) of the target element (120), and when deflected, it is incident on the outside of the center of the target element (120) or the outside of the collision region (150), or A method wherein the electron beam (es) is deflected at least intermittently by at least one of the deflection devices (140), so that when the electron beam (es) is not deflected, it is incident on the target element (120), and when it is deflected, it is incident on the catching device (160).

16. The method according to claim 15, wherein at least two of the deflection devices (140) control the electron beam (es) with a trajectory (180) to enter the target element (120) in accordance with an Archimedes spiral, either from inside to outside or from outside to inside, but without intersecting the center or the collision region (150) of the target element (120).

17. The method according to claim 15, wherein the X-ray source (100; 100a; 100b; 100c) further comprises an anode body (130), and at least one of the catching devices (160) is thermally coupled to the target element (120) and the anode body (130), and the thermal energy generated by at least one of the catching devices (160) is transferred to the target element (120) and the anode body (130).

18. The method according to claim 15, wherein the target element (120) has a first region (122a) with a first target material (TM-1) and a second region (122b) with a second target material (TM-2) different from the first target material (TM-1), and the method comprises (200) the electrons (e) in the form of an electron beam (es) colliding with the first region (122a) and / or the second region (122b) of the target element (120), wherein the collision (200) comprises (200a) the electrons (e) colliding with different regions (122a, 122b, 122c) of the target element (120) off-center and in a continuous sequence of time.

19. The X-ray source (100; 100a; 100b; 100c) has at least one deflection device (140) for at least intermittent deflection of the electron (e), and the method comprises the following elements: a) at least intermittent deflection of the electron (e) (210a) by using at least one of the deflection devices (140) with respect to the first region (122a) of the target element (120) so that the electron (e) is incident mainly on the first region (122a); b) at least intermittent deflection of the electron (e) (210b) by using at least one of the deflection devices (140) with respect to the second region (122b) of the target element (120) so that the electron (e) is incident mainly on the second region (122b); c) the electron (e) is mainly incident on at least one further region (12 The method according to claim 15, comprising at least one of the following: d) at least intermittent deflection (210c) of the electron (e) using at least one of the deflection devices (140) for at least one further region (122c) of the target element (120) that is different from the first region (122a) and the second region (122b) so as to be incident on 2c); d) at least intermittent deflection (210d) of the electron (e) using at least one of the deflection devices (140) so as to be incident on the target element (120) but passing radially outside the target element (120); e) continuous deflection (212) of the electron (e) for different regions (122a, 122b, 122c) of the target element (120) in one or two dimensions (x, y).

20. The method of claim 15, further comprising setting information associated with a stray magnetic field (SF) having the strength and / or direction of the magnetic field (220), and compensating for the stray magnetic field (SF) at least intermittently and / or locally using at least one of the deflection devices (140) (222).

21. The method according to claim 15, further comprising setting (230) a first variable (G1) that characterizes the voltage applied between two electrodes (141a, 141b) of the deflection device (140), and operating (232) the deflection device (140) based on the first variable (G1).

22. The method according to claim 21, wherein a control voltage for deflecting the electron (e) is applied to the two electrodes (141a, 141b) at least intermittently in a first time domain (ZB1), and the first variable (G1) is set at least intermittently in a second time domain (ZB2) located outside the first time domain (ZB1).

23. A method (400) of using the X-ray source (100; 100a; 100b; 100c) and / or the X-ray tube (10) according to claim 13, wherein the method (400) comprises the following elements: a) providing different types of X-ray emission (RS1, RS2) that are different from each other in terms of intensity and / or spectrum of the X-ray emission in order to provide at least two different types of X-ray emission (RS1, RS2) in a time-continuous and / or alternating manner (402); b) optimizing the X-ray source (100; 100a; 100b; 100c) and / or the X-ray tube (10) for an application that can be specified in the area of ​​X-ray fluorescence analysis (404); c) performing X-ray fluorescence analysis (406); d) A method of use (400) relating to at least one of the following: (408) controlling the thermal load of the target element (120) in the axial region (122-AB); (410) extending the service life or durability of the target element (120) for precision applications; (410) reducing the generation of X-ray radiation; (412) (414) making individual use of at least one region (122a, 122b) of the target element (120); (416) compensating for stray magnetic fields (SF) or interference fields; (417) irradiating the target element (120) with electrons (e) or the electron beam (es); (418) evaluating the beam position of the electron beam (es), performing diagnostics (418a).

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