Organic light-emitting diode display panel and method for manufacturing the same

Abstract

The organic light emitting diode display panel includes a thin film transistor substrate, a plurality of thin film transistors, and a plurality of organic light emitting diodes. The plurality of thin film transistors are disposed on one side of the thin film transistor substrate. The plurality of organic light emitting diodes are disposed on one side of the thin film transistor substrate away from the plurality of thin film transistors. The plurality of organic light emitting diodes are disposed on a flat surface and are not affected by surface irregularities generated by the plurality of thin film transistors. Therefore, the plurality of organic light emitting diodes can maximize space utilization, thereby improving the pixel density of the organic light emitting diode display panel.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and particularly relates to an organic light-emitting diode display panel and a manufacturing method thereof.

Background Art

[0002] Organic light-emitting diode display panels have advantages such as a wide viewing angle and a wide color gamut, and are attracting attention and being developed by manufacturers of various display devices as a mainstream display panel. Currently, organic light-emitting diode display panels often use thin-film transistors having a top-gate structure, that is, top-gate thin-film transistors. Compared with conventional thin-film transistors having a bottom-gate structure, the top-gate thin-film transistors reduce the manufacturing process of the organic light-emitting diode display panel and further reduce the manufacturing cost.

[0003] However, in the above top-gate thin-film transistor, the gate located at the middle position of the top of the top-gate thin-film transistor always causes unevenness on the surface of the top-gate thin-film transistor, resulting in poor surface flatness. When the surface of the top-gate thin-film transistor is not flat, it affects the light-emitting effect of a plurality of light-emitting layers provided on the top-gate thin-film transistor later.

[0004] In the prior art, in order to improve the surface flatness of the top-gate thin-film transistor, generally, a leveling layer is additionally provided on the top-gate thin-film transistor. By providing the light-emitting layer on the flat plane of the leveling layer, the light-emitting effect of the light-emitting layer can be improved.

Summary of the Invention

Problems to be Solved by the Invention

[0005] While the conventional structure can improve the display effect of the organic light-emitting diode display panel using the top-gate thin-film transistor described above, it increases the thickness of the organic light-emitting diode display panel, increases the manufacturing process and cost of the organic light-emitting diode display panel, and further affects the flexibility of the organic light-emitting diode display panel.

[0006] Therefore, the conventional technology cannot achieve both the conventional advantages of the organic light-emitting diode display panel and the technical challenges of the top-gate thin-film transistor. [Means for solving the problem]

[0007] The present invention provides an organic light-emitting diode (LED) display panel and a method for manufacturing the same, thereby avoiding the problems faced by conventional organic light-emitting diode (LED) display panels using top-gate thin-film transistors. At the same time, the present invention further simplifies the manufacturing process of the LED display panel, enhances the light-emitting effect of the LED display panel, and improves the pixel density of the LED display panel, thereby providing viewers with a higher viewing experience.

[0008] The organic light-emitting diode display panel of the present invention includes a thin-film transistor substrate, a plurality of thin-film transistors, and a plurality of organic light-emitting diodes. The plurality of thin-film transistors are provided on one side of the thin-film transistor substrate. The plurality of organic light-emitting diodes are provided on one side of the thin-film transistor substrate away from the plurality of thin-film transistors.

[0009] In one embodiment, each of the plurality of thin-film transistors includes a gate, a source, a drain, and a semiconductor layer electrically connected to the source and the drain. Each of the plurality of organic light-emitting diodes corresponds to each of the plurality of thin-film transistors and includes a first electrode, a light-emitting layer, and a second electrode electrically connected to the source or the drain. The first electrode is provided on one side of the thin-film transistor substrate away from the plurality of thin-film transistors, the light-emitting layer is provided on one side of the first electrode away from the thin-film transistor substrate, and the second electrode is provided on one side of the light-emitting layer away from the first electrode.

[0010] In one embodiment, the first electrode has an area equal to or greater than the area of ​​the semiconductor layer and blocks light irradiation to the semiconductor layer.

[0011] In one embodiment, the material of the first electrode includes a non-transparent material.

[0012] In one embodiment, the source and the drain are provided on one side of the semiconductor layer away from the thin-film transistor substrate, and the gate is provided on one side of the source and the drain away from the semiconductor layer.

[0013] In one embodiment, the gate is provided on one side of the semiconductor layer away from the thin-film transistor substrate, and the source and drain are provided on one side of the gate away from the semiconductor layer.

[0014] In one embodiment, the gate, source, and drain have a total projected area onto the semiconductor layer that is greater than or equal to the area of ​​the semiconductor layer, thereby blocking light irradiation to the semiconductor layer.

[0015] In one embodiment, the thin-film transistor substrate includes through holes, and the first electrode is electrically connected to the thin-film transistor through the through holes.

[0016] In one embodiment, the organic light-emitting diode display panel further includes a release layer provided between the thin-film transistor substrate and the plurality of organic light-emitting diodes.

[0017] In one embodiment, the material of the release layer includes gallium nitride.

[0018] The method for manufacturing the organic light-emitting diode display panel of the present invention is as follows: Step S1, which involves forming a peeling layer, Step S2 involves forming a thin-film transistor substrate on one side of the peeling layer, Step S3 involves forming a plurality of thin-film transistors on one side of the thin-film transistor substrate that is separated from the delamination layer, The process includes step S4, which involves forming a plurality of organic light-emitting diodes on one side of the peel layer that is separated from the thin-film transistor substrate.

[0019] In one embodiment, step S3 is, Step S31: Forming a semiconductor layer on one side of the thin film transistor substrate that is separated from the delamination layer, Step S32 involves forming a gate insulating layer on one side of the semiconductor layer that is separated from the thin-film transistor substrate, Step S33 involves forming a gate on one side of the gate insulating layer that is separated from the semiconductor layer, Step S34 involves forming an interlayer dielectric layer on one side of the thin film transistor substrate that is separated from the delamination layer, Step S35 involves forming through holes in the interlayer dielectric layer, the thin film transistor substrate, and the delamination layer, The process includes step S36, which involves forming a source and a drain on one side of the interlayer dielectric layer that is separated from the thin-film transistor substrate.

[0020] In one embodiment, the gate, source, and drain have a total projected area onto the semiconductor layer that is greater than or equal to the area of ​​the semiconductor layer, and block light irradiation onto the semiconductor layer.

[0021] In one embodiment, step S36 is, Step S361 of filling the through hole with a conductive material, Step S362 of electrically connecting the source and the conductive material in the through hole, or Step S362' of electrically connecting the drain and the conductive material in the through hole, is included.

[0022] In one embodiment, step S4 includes forming a first electrode on one side of the release layer away from the thin film transistor substrate, forming a light emitting layer on one side of the first electrode away from the release layer, and forming a second electrode on one side of the light emitting layer away from the first electrode.

[0023] In one embodiment, the first electrode has an area equal to or larger than the area of the semiconductor layer and blocks irradiation of light to the semiconductor layer.

[0024] In one embodiment, the material of the first electrode includes a non-translucent material.

[0025] In one embodiment, step S1 includes forming the release layer on one side of the first substrate, and includes separating the first substrate and the release layer before performing step S4.

[0026] In one embodiment, the release layer is separated from the first substrate by a laser ablation method.

[0027] In one embodiment, the material of the release layer includes gallium nitride.

Advantages of the Invention

[0028] In the present invention, the organic light-emitting diode display panel and the method for manufacturing the organic light-emitting diode display panel are provided without the conventional leveling layer and the organic light-emitting diode electrodes on the plurality of thin-film transistors, and the plurality of organic light-emitting diodes are provided on one side of the thin-film transistor substrate that is separated from the plurality of thin-film transistors. Therefore, the organic light-emitting diode display panel of the present invention is not affected by surface irregularities generated as gates of the plurality of thin-film transistors by providing the plurality of organic light-emitting diodes on a flat surface. By providing the plurality of organic light-emitting diodes on a flat surface, the light-emitting layer can make maximum use of space and further improve the pixel density of the organic light-emitting diode display panel. At the same time, the gates, sources, drains, and first electrodes provided on both the upper and lower sides of each of the plurality of thin-film transistors can act as light-shielding layers to block light irradiation to the semiconductor layer in each of the plurality of thin-film transistors, thereby simplifying the manufacturing process of the organic light-emitting diode display panel, increasing the display efficiency of the plurality of thin-film transistors, and enhancing the light-emitting effect of the organic light-emitting diode display panel, thereby providing a high viewing effect to the viewer. [Brief explanation of the drawing]

[0029] [Figure 1] This is a schematic diagram of the organic light-emitting diode display panel of the present invention. [Figure 2] This is a flowchart of steps S1 to S4 of the method for manufacturing an organic light-emitting diode display panel according to the present invention. [Figure 3] This is a flowchart of steps S31 to S36 of the method for manufacturing an organic light-emitting diode display panel according to the present invention. [Figure 4] This is a flowchart of steps S361 to S362 / S362' of the method for manufacturing an organic light-emitting diode display panel according to the present invention. [Figure 5] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 6]This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 7] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 8] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 9] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 10] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 11] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 12] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 13] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 14] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 15] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 16] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 17] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 18] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Figure 19] This is a schematic diagram of the manufacturing process for the organic light-emitting diode display panel of the present invention. [Modes for carrying out the invention]

[0030] To further clarify the above and other objectives, features, and advantages of the present invention, preferred embodiments of the present invention will be described in detail below with reference to the drawings.

[0031] The present invention provides an organic light-emitting diode display panel. Figure 1 is a schematic diagram of the organic light-emitting diode display panel of the present invention. The organic light-emitting diode display panel includes a release layer 200, a thin-film transistor substrate 300, a plurality of thin-film transistors 400, and a plurality of organic light-emitting diodes 800.

[0032] The above-mentioned delamination layer is manufactured from a semiconductor material and includes organic and inorganic semiconductors. In one embodiment, the material of the delamination layer 200 of the present invention includes gallium nitride (GaN), an inorganic semiconductor, and the delamination layer 200 manufactured from gallium nitride generates a gas after laser irradiation, which can separate elements connected to its surface. The application of the above-mentioned delamination layer 200 in the manufacturing method of the organic light-emitting diode display panel of the present invention will be described in later embodiments.

[0033] As shown in Figure 1, the thin-film transistor substrate 300 is provided on one side of the release layer 200, and the plurality of thin-film transistors 400 are provided on the side of the thin-film transistor substrate 300 that is away from the release layer 200. The thin-film transistor substrate 300 blocks the release layer 200 and the plurality of thin-film transistors 400, ensuring that the release layer 200 does not come into direct contact with the plurality of thin-film transistors 400, thereby avoiding any impact on the operation of the plurality of thin-film transistors 400.

[0034] Each of the plurality of thin-film transistors 400 is a drive switch for each of the plurality of organic light-emitting diodes 800 and includes a semiconductor layer 410, a gate insulating layer 420, a gate 430, a source 440, and a drain 450. In one embodiment, the source 440 and the drain 450 are provided on one side of the gate 430 away from the thin-film transistor substrate 300. By controlling the input voltage of the gate 430, each of the plurality of thin-film transistors 400 can control the on / off state of the current across the source 440 and the drain 450.

[0035] The present invention will be described as an example in which each of the plurality of thin-film transistors 400 is a top-gate type thin-film transistor. The top-gate type thin-film transistor reduces the manufacturing process of the organic light-emitting diode display panel and further reduces the manufacturing cost. Note that each of the plurality of thin-film transistors 400 of the present invention is not limited to the top-gate type thin-film transistor, but may be a bottom-gate type thin-film transistor or a thin-film transistor of another structure.

[0036] As shown in Figure 1, the gate 430 is provided on one side of the semiconductor layer 410 away from the thin-film transistor substrate 300, the source and drain are provided on one side of the gate 430 away from the semiconductor layer 410, the semiconductor layer 410 is provided between the thin-film transistor substrate 300 and the gate 430, the gate insulating layer 420 is provided between the semiconductor layer 410 and the gate 430, and the source 440 and drain 450 are electrically connected to the semiconductor layer 410.

[0037] Because the semiconductor layer contains a metal oxide having a wide energy gap, the semiconductor layer 410 of the present invention can construct a connection channel between the source 440 and the drain 450. In one embodiment, the semiconductor layer 410 of the present invention contains indium gallium zinc oxide (IGZO). Since the electron mobility of the indium gallium zinc oxide is 20 to 30 times that of conventional amorphous silicon semiconductors, it significantly improves the charge / discharge speed and response speed of each of the multiple thin-film transistors 400. By using the indium gallium zinc oxide as the channel for each of the multiple thin-film transistors 400, a faster refresh rate of the organic light-emitting diode display panel can be achieved. At the same time, because the driving capability of the indium gallium zinc oxide is high, the driving power consumption of each of the multiple thin-film transistors 400 is reduced, making the organic light-emitting diode display panel more energy-efficient and power-saving, and significantly increasing the operating range of the organic light-emitting diode display panel.

[0038] As shown in Figure 1, the organic light-emitting diode display panel further includes an interlayer dielectric layer 500. The interlayer dielectric layer 500 covers the semiconductor layer 410, the gate insulating layer 420, and the gate 430. The interlayer dielectric layer 500 has a high dielectric constant and isolates the gate 430, the source 440, and the drain 450.

[0039] As shown in Figure 1, the organic light-emitting diode display panel further includes a passivation layer 600 and a first sealing layer 710, which are sequentially provided on one side of each of the multiple thin-film transistors 400 that are separated from the thin-film transistor substrate 300. The passivation layer 600 covers the source 440 and drain 450 of each of the multiple thin-film transistors 400 and also covers the interlayer dielectric layer 500. The passivation layer 600 has an insulating effect and provides the organic light-emitting diode display panel with toughness when bent. By installing the first sealing layer 710, the outside of the organic light-emitting diode display panel can be sealed, thereby protecting the organic light-emitting diode display panel.

[0040] As shown in Figure 1, the plurality of organic light-emitting diodes 800 are provided on one side of the thin-film transistor substrate 300, away from the plurality of thin-film transistors 400. Each of the plurality of organic light-emitting diodes 800 corresponds to each of the plurality of thin-film transistors 400. Each of the plurality of organic light-emitting diodes 800 includes a first electrode 810, a light-emitting layer 820, and a second electrode 840.

[0041] In one embodiment, the first electrode 810 is provided on one side of the release layer 200 away from the thin-film transistor substrate 300. The first electrode 810 corresponds to each of the plurality of thin-film transistors 400. When the first electrode 810 is provided on a flat surface of the release layer 200, the light-emitting layer 820 can achieve optimal space utilization efficiency and improve the pixel density of the organic light-emitting diode display panel.

[0042] In one embodiment, the source 440 of each of the multiple thin-film transistors 400 is electrically connected to the first electrode 810. In another embodiment, the drain 450 of each of the multiple thin-film transistors 400 is electrically connected to the first electrode 810. The operation performed by the source 440 or the drain 450 in each of the multiple thin-film transistors 400 is simply an operation to input or output current, and the present invention is not limited to the fact that the source 440 or the drain 450 is electrically connected to the first electrode 810.

[0043] As shown in Figure 1, the light-emitting layer 820 is provided on one side of the first electrode 810 away from the release layer 200. The present invention provides the light-emitting layer 820 on the surface of the first electrode 810 by an inkjet printing process. At the same time, by filling the space between the light-emitting layers 820 with pixel spacers 830, the light-emitting layers 820 form pixels of the organic light-emitting diode display panel.

[0044] The second electrode 840 is provided on one side of the light-emitting layer 820 that is away from the first electrode 810. The second electrode 840 covers the light-emitting layer 820 and the pixel spacer 830 and operates together with the first electrode 810 as a common electrode, driving the light-emitting layer 820 to emit light.

[0045] It should be noted that each of the semiconductor layers 410 of the multiple thin-film transistors 400 is sensitive to light, and when light is shone on the semiconductor layer 410, electrical drift is likely to occur, affecting the driving effect of each of the multiple thin-film transistors 400. Therefore, in the prior art, it is generally necessary to provide additional light-shielding layers on both the upper and lower sides of each of the semiconductor layers 410 of the multiple thin-film transistors 400.

[0046] However, in the present invention, the gate 430, source 440, drain 450, and first electrode 810 further exert a light-shielding effect on the semiconductor layer 410, thereby blocking light irradiation to the semiconductor layer 410. At the same time, since the gate 430, source 440, and drain 450 are provided on one side of the semiconductor layer 410, and the first electrode 810 is provided on the side of the semiconductor layer 410 away from the gate 430, source 440, and drain 450, the gate 430, source 440, drain 450, and first electrode 810 can achieve the light-shielding effect of the light-shielding layer in the prior art, and therefore the present invention can further simplify the structure of the organic light-emitting diode display panel.

[0047] To achieve the above objective, in one embodiment of the present invention, the total projected area of ​​the gate 430, the source 440, and the drain 450 onto the semiconductor layer 410 is greater than or equal to the area of ​​the semiconductor layer 410, and the area of ​​the first electrode 810 is set to be greater than or equal to the area of ​​the semiconductor layer 410 of each of the multiple thin-film transistors 400. Furthermore, the material of the first electrode 810 is a non-transparent conductive material, such as silver (Ag), indium tin oxide / silver / indium tin oxide (ITO / Ag / ITO) composite layer, indium zinc oxide / silver / indium zinc oxide (IZO / Ag / IZO) composite layer, indium tin oxide / silver palladium copper alloy / indium tin oxide (ITO / APC / ITO) composite layer, or indium zinc oxide / silver palladium copper alloy / indium zinc oxide (IZO / APC / IZO) composite layer.

[0048] As shown in Figure 1, the organic light-emitting diode display panel of the present invention further includes a second sealing layer 720 provided on the surface of the second electrode 840. By installing the second sealing layer 720, the lower side of the organic light-emitting diode display panel is sealed, thereby protecting the organic light-emitting diode display panel.

[0049] In the organic light-emitting diode display panel of the present invention, the conventional leveling layer and the organic light-emitting diodes 800 are not provided on the plurality of thin-film transistors 400, but the plurality of organic light-emitting diodes 800 are provided on one side of the thin-film transistor substrate 300 that is away from the plurality of thin-film transistors 400. Therefore, the organic light-emitting diode display panel of the present invention is not affected by surface irregularities generated as gates 430 of the plurality of thin-film transistors 400 by providing the plurality of organic light-emitting diodes 800 on a flat surface. Because the plurality of organic light-emitting diodes 800 can be provided on a flat surface, the light-emitting layer 820 can make maximum use of space, and further improves the pixel density of the organic light-emitting diode display panel. At the same time, the gate 430, source 440, drain 450, and first electrode 810 provided on both the upper and lower sides of each of the multiple thin-film transistors 400 can act as a light-shielding layer to block light irradiation to the semiconductor layer 410 in each of the multiple thin-film transistors. This simplifies the manufacturing process of the organic light-emitting diode display panel, increases the display efficiency of the multiple thin-film transistors 400, and enhances the light-emitting effect of the organic light-emitting diode display panel, thereby providing a high viewing experience for the viewer.

[0050] The present invention further provides a method for manufacturing an organic light-emitting diode display panel as described above. Figure 2 is a flowchart of steps S1 to S4 of the method for manufacturing the organic light-emitting diode display panel according to the present invention. The manufacturing method for manufacturing the organic light-emitting diode display panel shown in Figure 1 according to the present invention mainly includes the following steps S1 to S4.

[0051] In step S1, a release layer 200 is formed.

[0052] In step S2, a thin-film transistor substrate 300 is formed on one side of the peeling layer 200.

[0053] In step S3, a plurality of thin-film transistors 400 are formed on one side of the thin-film transistor substrate 300 that is separated from the peeling layer 200.

[0054] In step S4, a plurality of organic light-emitting diodes 800 are formed on one side of the peeling layer 200 that is separated from the thin-film transistor substrate 300.

[0055] The technical means of the present invention will be described below with reference to the schematic diagrams of the manufacturing process of the organic light-emitting diode display panel shown in Figures 5 to 19.

[0056] Referring to Figure 5, in step S1 of Figure 2, a release layer 200 is formed. The release layer is made of semiconductor material and includes organic semiconductors and inorganic semiconductors. In one embodiment, the material of the release layer 200 of the present invention includes gallium nitride (GaN), an inorganic semiconductor.

[0057] In one embodiment, step S1 includes forming the release layer 200 on one side of the first substrate 110. As shown in Figure 5, the first substrate 110 may be a glass substrate used in the display panel industry, thus providing a simple and convenient initial step for the manufacturing method of the organic light-emitting diode display panel of the present invention.

[0058] Referring to Figure 6, in step S2 of Figure 2, a thin-film transistor substrate 300 is formed on one side of the release layer 200 that is separated from the first substrate 110. As shown in Figure 1, the thin-film transistor substrate 300 blocks the release layer 200 and the plurality of thin-film transistors 400, so that the release layer 200 does not come into direct contact with the plurality of thin-film transistors 400 that are formed in the later step S3, thereby avoiding affecting the operation of the plurality of thin-film transistors 400.

[0059] In step S3 of Figure 2, a plurality of thin-film transistors 400, as shown in Figure 1, are formed on one side of the thin-film transistor substrate 300 that is separated from the peeling layer 200.

[0060] Figure 3 is a flowchart of steps S31 to S36 of the method for manufacturing an organic light-emitting diode display panel of the present invention. In one embodiment, step S3 includes the following steps S31 to S36 to form each of the plurality of thin-film transistors 400 shown in Figure 1.

[0061] In step S31, a semiconductor layer 410 is formed on one side of the thin-film transistor substrate 300 that is separated from the peeling layer 200.

[0062] In step S32, a gate insulating layer 420 is formed on one side of the semiconductor layer 410 that is separated from the thin-film transistor substrate 300.

[0063] In step S33, a gate 430 is formed on one side of the gate insulating layer 420 that is away from the semiconductor layer 410.

[0064] In step S34, an interlayer dielectric layer 500 is formed on one side of the thin-film transistor substrate 300 that is separated from the delamination layer 200.

[0065] In step S35, a plurality of through holes 510 are formed in the interlayer dielectric layer 500, the thin-film transistor substrate 300, and the release layer 200.

[0066] In step S36, a source 440 and a drain 450 are formed on one side of the interlayer dielectric layer 500 that is separated from the thin-film transistor substrate 300.

[0067] Referring to Figure 7, in step S31, the semiconductor layer 410 is formed on one side of the thin-film transistor substrate 300, away from the exfoliation layer 200, by a photolithography process. Because the semiconductor layer contains a metal oxide with a wide energy gap, the semiconductor layer 410 of the present invention can construct a connection channel between the source 440 and the drain 450 shown in Figure 1 in a later step S36. In one embodiment, the semiconductor layer 410 of the present invention contains indium gallium zinc oxide (IGZO). Since the electron mobility of the indium gallium zinc oxide is 20 to 30 times that of conventional amorphous silicon semiconductors, it significantly improves the charge / discharge speed and response speed of each of the multiple thin-film transistors 400 shown in Figure 1. Using the indium gallium zinc oxide as the channel for each of the multiple thin-film transistors 400, a faster refresh rate of the organic light-emitting diode display panel can be achieved. At the same time, because the driving capability of the indium gallium zinc oxide is high, the driving power consumption of each of the multiple thin-film transistors 400 is reduced, making the organic light-emitting diode display panel more energy-efficient and power-saving, and significantly increasing the operating range of the organic light-emitting diode display panel.

[0068] Referring to Figure 8, in step S32, the gate insulating layer 420 is formed on one side of the semiconductor layer 410 that is separated from the thin-film transistor substrate 300 by the photolithography process. As shown in Figure 1, the gate insulating layer 420 prevents contact between the semiconductor layer 410 and the gate 430 formed in the later step S33. In one embodiment, the gate insulating layer 420 is provided on the semiconductor layer 410, and the edge of the gate insulating layer 420 is recessed from the edge of the semiconductor layer 410. That is, the lower surface area of ​​the gate insulating layer 420 is smaller than the upper surface area of ​​the semiconductor layer 410. This is to preserve the positions of both the left and right sides of the semiconductor layer 410 and to facilitate the connection of the source 440 and the drain 450 formed in the later step S36.

[0069] Referring to Figure 9, in step S33, the gate 430 is formed on one side of the gate insulating layer 420 that is separated from the semiconductor layer 410 by the photolithography process. In one embodiment, the gate 430 is provided on the gate insulating layer 420, and the edge of the gate 430 is set back from the edge of the gate insulating layer 420. That is, the lower surface area of ​​the gate 430 is smaller than the upper surface area of ​​the gate insulating layer 420. This is to ensure that the gate 430 does not extend beyond the edge of the gate insulating layer 420 and to preserve the positions of both the left and right sides of the semiconductor layer 410, thereby facilitating the connection of the source 440 and the drain 450 shown in Figure 1, which are formed in the later step S36.

[0070] Referring to Figure 10, in step S34, the coating process forms the interlayer dielectric layer 500 on one side of the thin-film transistor substrate 300 that is separated from the release layer 200. After being applied to the thin-film transistor substrate 300, the interlayer dielectric layer 500 covers the semiconductor layer 410, the gate insulating layer 420, and the gate 430. The interlayer dielectric layer 500 has a high dielectric constant and isolates the gate 430 from the source 440 and drain 450 shown in Figure 1, which are formed in a later step S36.

[0071] Referring to Figure 11, in step S35, etching of different depths is performed on the interlayer dielectric layer 500, the thin-film transistor substrate 300, and the release layer 200 using a halftone mask to form a plurality of through-holes 510 in the interlayer dielectric layer 500, the thin-film transistor substrate 300, and the release layer 200. Since the semiconductor layer 410, the gate insulating layer 420, and the gate 430 are covered by the interlayer dielectric layer 500, the source 440 and the drain 450 shown in Figure 1, which are formed in the later step S36, cannot be electrically connected to the semiconductor layer 410. Therefore, when forming each of the plurality of thin-film transistors 400, it is necessary to form electrically connected channels by etching. The plurality of through-holes 510 include source through-holes 511 and drain through-holes 512. The source through-holes 511 and drain through-holes 512 penetrate the interlayer dielectric layer 500 and expose the semiconductor layer 410. In one embodiment, the plurality of through holes 510 further include a through hole 513 for the first electrode. The through hole 513 for the first electrode penetrates the interlayer dielectric layer 500, the thin-film transistor substrate 300, and the release layer 200, and exposes the first substrate 110.

[0072] Referring to Figure 12, in step S36, the source 440 and drain 450 are formed on one side of the interlayer dielectric layer 500 that is separated from the thin-film transistor substrate 300 by the photolithography process. The plurality of thin-film transistors 400 formed in step S3 of the present invention are top-gate thin-film transistors.

[0073] As shown in Figure 12, in the present invention, each of the plurality of thin-film transistors 400 is a drive switch for each of the plurality of organic light-emitting diodes 800, and includes a gate 430, a source 440, and a drain 450. By controlling the input voltage of the gate 430, each of the plurality of thin-film transistors 400 can control the on / off state of the current across the source 440 and the drain 450.

[0074] The present invention will be described as an example in which each of the plurality of thin-film transistors 400 is a top-gate type thin-film transistor. The top-gate type thin-film transistor reduces the manufacturing process of the organic light-emitting diode display panel and further reduces the manufacturing cost. However, each of the plurality of thin-film transistors 400 of the present invention is not limited to the top-gate type thin-film transistor, but may also be a bottom-gate type thin-film transistor or a thin-film transistor of another structure.

[0075] Figure 4 is a flowchart of steps S361 to S362 / S362' of the method for manufacturing an organic light-emitting diode display panel according to the present invention. In one embodiment, step S36 includes the following steps S361 to S362 / S362' to form the source 440 and drain 450 shown in Figure 1.

[0076] In step S361, conductive material is filled into the multiple through holes 510.

[0077] In step S362, the source 440 and the conductive material in the through-hole 513 for the first electrode are electrically connected.

[0078] Alternatively, in step S362', the drain 450 and the conductive material in the through-hole 513 for the first electrode are electrically connected.

[0079] As shown in Figure 12, in step S361, after forming the multiple through holes 510, the conductive material is filled into the multiple through holes 510. When the source 440 and the drain 450 are formed in the multiple through holes 510, they are electrically connected to the conductive material in the multiple through holes 510. Therefore, in each of the multiple thin-film transistors 400, the source 440 is electrically connected to the semiconductor layer 410 by the conductive material in the source through hole 511, and the drain 450 is electrically connected to the semiconductor layer 410 by the conductive material in the drain through hole 512.

[0080] In the manufacturing process for forming each of the multiple thin-film transistors 400, the purpose of providing the through-hole 513 for the first electrode is to electrically connect the source 440 or drain 450 of each of the multiple thin-film transistors 400 to the first electrode 810 shown in Figure 1, which is formed in a later step S4. Therefore, as shown in Figure 12, in one embodiment of the present invention, step S362 is used, meaning that the source 440 is electrically connected to the conductive material in the through-hole 513 for the first electrode. In another embodiment, step S362' may be used in the process for forming each of the multiple thin-film transistors 400, meaning that the drain 450 is electrically connected to the conductive material in the through-hole 513 for the first electrode. The operation performed by the source 440 or drain 450 in each of the multiple thin-film transistors 400 is simply an operation to input or output current, and the present invention is not limited to the fact that the source 440 or drain 450 is electrically connected to the first electrode 810 shown in Figure 1 by the through-hole 513 for the first electrode.

[0081] Referring to Figure 13, after step S3 in Figure 2 is completed, a passivation layer 600 and a first sealing layer 710 are sequentially formed on one side of the plurality of thin-film transistors 400 that are separated from the thin-film transistor substrate 300. The passivation layer 600 covers the source 440 and drain 450 of each of the plurality of thin-film transistors 400 and also covers the interlayer dielectric layer 500. The passivation layer 600 has an insulating effect and provides toughness to the organic light-emitting diode display panel when bent. Furthermore, the first sealing layer 710 facilitates the progress of subsequent manufacturing processes by bonding the semi-finished organic light-emitting diode display panel formed in steps S1 to S3 to the second substrate 120.

[0082] Before performing step S4 in Figure 2, the method for manufacturing the organic light-emitting diode display panel of the present invention further includes separating the first substrate 110 and the release layer 200. Before proceeding to step S4, the method for manufacturing the organic light-emitting diode display panel of the present invention removes the first substrate 110 from the semi-finished organic light-emitting diode display panel formed in the previous step.

[0083] Figure 14 shows the inverted semi-finished organic light-emitting diode display panel. To remove the first substrate 110, the present invention inverts the semi-finished organic light-emitting diode display panel during the manufacturing process and removes the first substrate 110 from the release layer 200 using a laser ablation method. By focusing a high-power nanosecond-femtosecond pulsed laser on the interface between the release layer 200 and the first substrate 110, the release layer 200, made of gallium nitride, is irradiated with the laser, generating gas and eliminating the bond between the interface. If there is no bonding force between the first substrate 110 and the release layer 200, the first substrate 110 is removed from the semi-finished organic light-emitting diode display panel to facilitate subsequent manufacturing processes.

[0084] Figure 15 shows a semi-finished product of the organic light-emitting diode display panel inverted. In step S4 of Figure 2, the photolithography process forms a plurality of organic light-emitting diodes 800 on one side of the release layer 200 that separates from the thin-film transistor substrate 300. Each of the plurality of organic light-emitting diodes 800 corresponds to each of the plurality of thin-film transistors 400. Each of the plurality of organic light-emitting diodes 800 includes a first electrode 810, a light-emitting layer 820, and a second electrode 840. The source 440 or drain 450 of each of the plurality of thin-film transistors 400 is electrically connected to the first electrode 810. Since all subsequent manufacturing steps are performed on one side of the release layer 200 that separates from the thin-film transistor substrate 300, if the first electrode 810 is formed on a flat surface of the release layer 200, the light-emitting layer 820 shown in Figure 1 can achieve optimal space utilization efficiency and improve the pixel density of the organic light-emitting diode display panel.

[0085] It should be noted that each of the semiconductor layers 410 of the multiple thin-film transistors 400 is sensitive to light, and when light is shone on the semiconductor layer 410, electrical drift is likely to occur, affecting the driving effect of each of the multiple thin-film transistors 400. Therefore, in the prior art, it is generally necessary to provide additional light-shielding layers on both the upper and lower sides of each of the semiconductor layers 410 of the multiple thin-film transistors 400.

[0086] However, in the present invention, the gate 430, source 440, drain 450, and first electrode 810 further exhibit a light-shielding effect on the semiconductor layer 410, thereby blocking light irradiation to the semiconductor layer 410. At the same time, since the gate 430, source 440, and drain 450 are formed on one side of the semiconductor layer 410, and the first electrode 810 is provided on the side of the semiconductor layer 410 away from the gate 430, source 440, and drain 450, the gate 430, source 440, drain 450, and first electrode 810 can achieve the light-shielding effect of the light-shielding layer in the prior art, and therefore the present invention can further simplify the manufacturing process of the organic light-emitting diode display panel.

[0087] To achieve the above objective, in one embodiment of the present invention, the total projected area of ​​the gate 430, the source 440, and the drain 450 onto the semiconductor layer 410 is greater than or equal to the area of ​​the semiconductor layer 410, and the area of ​​the first electrode 810 is set to be greater than or equal to the area of ​​the semiconductor layer 410 of each of the multiple thin-film transistors 400. Furthermore, the material of the first electrode 810 is a non-transparent conductive material, such as silver (Ag), indium tin oxide / silver / indium tin oxide (ITO / Ag / ITO) composite layer, indium zinc oxide / silver / indium zinc oxide (IZO / Ag / IZO) composite layer, indium tin oxide / silver palladium copper alloy / indium tin oxide (ITO / APC / ITO) composite layer, or indium zinc oxide / silver palladium copper alloy / indium zinc oxide (IZO / APC / IZO) composite layer.

[0088] Figure 16 shows a semi-finished product of the organic light-emitting diode display panel inverted. In step S4 of Figure 2, the present invention forms the light-emitting layer 820 on one side of the first electrode 810 that is separated from the release layer 200 by an inkjet printing process. At the same time, the light-emitting layers 820 form pixels of the organic light-emitting diode display panel by filling the spaces between the light-emitting layers 820 with pixel spacers 830.

[0089] Figure 17 shows a semi-finished product of the organic light-emitting diode display panel inverted. In this invention, the second electrode 840 is formed on one side of the light-emitting layer 820 that is separated from the first electrode 810. The second electrode 840 covers the light-emitting layer 820 and the pixel spacer 830 and operates together with the first electrode 810 as a common electrode to drive the light-emitting layer 820 to emit light.

[0090] Referring to Figure 18, after step S4 in Figure 2 is completed, the present invention forms a second sealing layer 720 on one side of the second electrode 840 away from the light-emitting layer 820. The second sealing layer 720 protects the organic light-emitting diode display panel by sealing the semi-finished product of the organic light-emitting diode display panel formed in steps S1 to S4.

[0091] Finally, referring to Figure 19, in the present invention, the second substrate 120 is peeled off from the first encapsulation layer 710 by the laser ablation method described above. To remove the second substrate 120, the present invention inverts the semi-finished product of the organic light-emitting diode display panel again during the manufacturing process and focuses a high-power nanosecond-femtosecond pulsed laser on the interface between the first encapsulation layer 710 and the second substrate 120. After the peeling layer 200 made of gallium nitride is irradiated with the laser, a gas is generated, causing the bond between the interface surfaces to disappear. If there is no bonding force between the second substrate 120 and the first encapsulation layer 710, the second substrate 120 is removed from the semi-finished product of the organic light-emitting diode display panel. In the steps up to this point, since the organic light-emitting diode display panel of the present invention does not have a rigid first substrate or second substrate, a flexible and pliable organic light-emitting diode display panel can be realized.

[0092] In the method for manufacturing the organic light-emitting diode display panel of the present invention, after the manufacturing process of the plurality of thin-film transistors 400 is completed, instead of continuing to form the conventional leveling layer and the plurality of organic light-emitting diodes 800 on the plurality of thin-film transistors 400, the plurality of organic light-emitting diodes 800 are formed on one side of the thin-film transistor substrate 300 that is away from the plurality of thin-film transistors 400. Therefore, the organic light-emitting diode display panel of the present invention has the plurality of organic light-emitting diodes 800 formed on a flat surface and is not affected by the surface irregularities generated as the gates 430 of the plurality of thin-film transistors 400. Since the plurality of organic light-emitting diodes 800 can be formed on a flat surface, the light-emitting layer 820 can make maximum use of space and further improve the pixel density of the organic light-emitting diode display panel. At the same time, the gate 430, source 440, drain 450, and first electrode 810 provided on both the upper and lower sides of the semiconductor layer 410 of each of the multiple thin-film transistors 400 can act as a light-shielding layer to block light irradiation to the semiconductor layer 410 in each of the multiple thin-film transistors. This simplifies the manufacturing process of the organic light-emitting diode display panel, increases the display efficiency of the multiple thin-film transistors 400, and enhances the light-emitting effect of the organic light-emitting diode display panel, thereby providing viewers with a high level of viewing enjoyment.

[0093] The above description represents only preferred embodiments of the present invention, and it should be noted that those skilled in the art can make several further improvements and modifications without departing from the principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. Organic light-emitting diode display panel, Thin film transistor substrate and A plurality of thin-film transistors are provided on one side of the thin-film transistor substrate, It includes a plurality of organic light-emitting diodes provided on one side of the thin-film transistor substrate, away from the plurality of thin-film transistors, Each of the plurality of organic light-emitting diodes corresponds to each of the plurality of thin-film transistors and includes a flat first electrode, a light-emitting layer, and a second electrode that are electrically connected to the source or drain, wherein the material of the first electrode is a non-transparent material. The second electrode operates together with the first electrode as a common electrode and drives the light-emitting layer to emit light. The organic light-emitting diode display panel further includes a delamination layer provided between the thin-film transistor substrate and the plurality of organic light-emitting diodes, The entire thin-film transistor substrate is formed on one side of the delamination layer, and the entire first electrode is formed on the opposite side of the delamination layer. The peeling layer completely separates the thin-film transistor substrate from the plurality of organic light-emitting diodes. Organic light-emitting diode display panel.

2. Each of the plurality of thin-film transistors includes a gate, a source, a drain, and a semiconductor layer electrically connected to the source and the drain. The first electrode is provided on one side of the thin-film transistor substrate, away from the plurality of thin-film transistors. The light-emitting layer is provided on one side of the first electrode away from the thin-film transistor substrate, and the second electrode is provided on one side of the light-emitting layer away from the first electrode. The organic light-emitting diode display panel according to claim 1.

3. The first electrode has an area greater than or equal to the area of ​​the semiconductor layer and blocks light irradiation to the semiconductor layer. The organic light-emitting diode display panel according to claim 2.

4. The source and the drain are provided on one side of the semiconductor layer away from the thin-film transistor substrate. The gate is provided on one side of the source and drain that is away from the semiconductor layer. The organic light-emitting diode display panel according to claim 2.

5. The gate is provided on one side of the semiconductor layer away from the thin-film transistor substrate. The source and the drain are provided on one side of the gate away from the semiconductor layer. The organic light-emitting diode display panel according to claim 2.

6. The gate, the source, and the drain have a total projected area onto the semiconductor layer that is greater than or equal to the area of ​​the semiconductor layer, and block light irradiation onto the semiconductor layer. The organic light-emitting diode display panel according to claim 5.

7. The thin-film transistor substrate includes through holes, The first electrode is electrically connected to the thin-film transistor through the through-hole. The organic light-emitting diode display panel according to claim 2.

8. The material of the aforementioned delamination layer contains gallium nitride. The organic light-emitting diode display panel according to claim 7.

9. Step S1, which involves forming a release layer, Step S2 involves forming a thin-film transistor substrate on one side of the peeling layer, Step S3 involves forming a plurality of thin-film transistors on one side of the thin-film transistor substrate that is separated from the peeling layer, The step includes forming a plurality of organic light-emitting diodes on one side of the peeling layer that is separated from the thin-film transistor substrate, The aforementioned step S4 is, The steps include forming a flat first electrode on one side of the peel layer that is separated from the thin-film transistor substrate, The step of forming a light-emitting layer on one side of the first electrode that is separated from the peeling layer, The process includes the step of forming a second electrode on one side of the light-emitting layer away from the first electrode, The material of the first electrode is a non-transparent material, and the second electrode operates together with the first electrode as a common electrode, driving the light-emitting layer to emit light. The peeling layer completely separates the thin-film transistor substrate from the plurality of organic light-emitting diodes. A method for manufacturing an organic light-emitting diode display panel.

10. Step S3 is, Step S31 involves forming a semiconductor layer on one side of the thin film transistor substrate that is separated from the delamination layer, Step S32 involves forming a gate insulating layer on one side of the semiconductor layer that is separated from the thin-film transistor substrate, Step S33 involves forming a gate on one side of the gate insulating layer that is separated from the semiconductor layer, Step S34 involves forming an interlayer dielectric layer on one side of the thin film transistor substrate that is separated from the delamination layer, Step S35 involves forming through holes in the interlayer dielectric layer, the thin film transistor substrate, and the delamination layer, The process includes step S36, which involves forming a source and a drain on one side of the interlayer dielectric layer that is separated from the thin-film transistor substrate. A method for manufacturing an organic light-emitting diode display panel according to claim 9.

11. The gate, the source, and the drain have a total projected area onto the semiconductor layer that is greater than or equal to the area of ​​the semiconductor layer, and block light irradiation onto the semiconductor layer. A method for manufacturing an organic light-emitting diode display panel according to claim 10.

12. The aforementioned step S36 is, Step S361 involves filling the through hole with a conductive material, The steps include: step S362, which electrically connects the source and the conductive material in the through hole; or step S362', which electrically connects the drain and the conductive material in the through hole. A method for manufacturing an organic light-emitting diode display panel according to claim 10.

13. The first electrode has an area greater than or equal to the area of ​​the semiconductor layer and blocks light irradiation to the semiconductor layer. A method for manufacturing an organic light-emitting diode display panel according to claim 10.

14. Step S1 includes the step of forming the release layer on one side of the first substrate, Before performing step S4, the step includes separating the first substrate from the release layer, A method for manufacturing an organic light-emitting diode display panel according to claim 9.

15. The aforementioned peeling layer is peeled off from the first substrate by a laser ablation method. A method for manufacturing an organic light-emitting diode display panel according to claim 14.

16. The material of the aforementioned delamination layer contains gallium nitride. A method for manufacturing an organic light-emitting diode display panel according to claim 9.

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