Magnetic sensor device

Abstract

To provide a magnetic sensor device in which a uniform magnetic field can be applied to a magnetic sensor by a magnetic field generator.SOLUTION: A magnetic field generator 3 is configured so as to generate a magnetic field to be applied to a magnetic sensor 2. The conductor layer 30 of the magnetic field generator 3 includes a first end 30a, a second end 30b, multiple main wires 31, a first sub wire 32, and a second sub wire 33. The first sub wire 32 includes multiple first routes extending from the first end 30a to each of the multiple main wires 31 through multiple first connection parts. The second sub wire 33 includes multiple second routes extending from the second end 30b to each of the multiple main wires 31 through multiple second connection parts. The number of the multiple first connection parts is the same in the arbitrary two-first routes. The number of the multiple second connection parts is the same in the arbitrary two-second routes.SELECTED DRAWING: Figure 9

Description

Technical Field

[0001] The present invention relates to a magnetic sensor device provided with a magnetic field generator.

Background Art

[0002] In recent years, magnetic sensors have been used in various applications. As a magnetic sensor, one using a spin valve type magnetoresistive effect element is known. The spin valve type magnetoresistive effect element has a magnetization fixed layer having a magnetization with a fixed direction, a free layer having a magnetization whose direction can change according to the direction of an applied magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer.

[0003] In the spin valve type magnetoresistive effect element, the resistance value changes according to the angle formed by the direction of the magnetization of the free layer with respect to the direction of the magnetization of the magnetization fixed layer. When this angle is 0°, the resistance value becomes the minimum value, and when the angle is 180°, the resistance value becomes the maximum value. In order to improve the detection accuracy of the magnetic sensor, it is preferable to align the direction of the magnetization of the free layer before using the magnetic sensor.

[0004] Patent Document 1 discloses a current detection device and a magnetic field detection device. Each of the current detection device and the magnetic field detection device includes a magnetoresistive effect element and a coil. In these devices, by supplying a current to the coil, a magnetic field is generated around the coil. The generated magnetic field is used to direct the direction of the magnetization of the magnetization free layer of the magnetoresistive effect element in a predetermined direction.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] A magnetic sensor is composed of multiple magnetoresistive elements. When a magnetic field is applied to multiple magnetoresistive elements using a magnetic field generator such as a coil, it is preferable that a uniform magnetic field is applied to each of the multiple magnetoresistive elements. To achieve this, it is preferable that the current density in the conductors constituting the magnetic field generator is uniform.

[0007] The present invention has been made in view of the above problems, and its object is to provide a magnetic sensor device comprising a magnetic sensor and a magnetic field generator, wherein a uniform magnetic field can be applied to the magnetic sensor by the magnetic field generator. [Means for solving the problem]

[0008] The magnetic sensor device of the present invention comprises a magnetic sensor and a magnetic field generator configured to generate a magnetic field to be applied to the magnetic sensor. The magnetic field generator of the present invention is configured to generate a magnetic field for inspection to be applied to the magnetic sensor. The magnetic field generator includes a conductive layer made of a conductive material. The conductive layer includes a first end, a second end, a plurality of main wirings for generating a magnetic field, a plurality of main wirings provided between the first end and the second end and separated from each other, a first sub-wiring that electrically connects the first end and the plurality of main wirings, and a second sub-wiring that electrically connects the second end and the plurality of main wirings.

[0009] The first sub-wiring includes a plurality of first paths leading from the first end to each of the plurality of main wirings. The second sub-wiring includes a plurality of second paths leading from the second end to each of the plurality of main wirings. Each of the plurality of first paths passes through a plurality of first junctions to which the first sub-wiring branches. Each of the plurality of second paths passes through a plurality of second junctions to which the second sub-wiring branches. The number of plurality of first junctions is the same for any two first paths among the plurality of first paths. The number of plurality of second junctions is the same for any two second paths among the plurality of second paths. [Effects of the Invention]

[0010] In the magnetic sensor device and magnetic field generator of the present invention, the number of first connecting parts that each of any two first paths among the plurality of first paths passes through is the same, and the number of second connecting parts that each of any two second paths among the plurality of second paths passes through is the same. As a result, according to the present invention, a uniform magnetic field can be applied to the magnetic sensor by the magnetic field generator. [Brief explanation of the drawing]

[0011] [Figure 1] This is a perspective view showing a magnetic sensor system according to the first embodiment of the present invention. [Figure 2] This is a perspective view showing a magnetic sensor device according to the first embodiment of the present invention. [Figure 3] This is a functional block diagram showing the configuration of a magnetic sensor device according to the first embodiment of the present invention. [Figure 4] This is a circuit diagram showing the circuit configuration of a magnetic sensor in the first embodiment of the present invention. [Figure 5] This is a perspective view showing a part of one resistor in the first embodiment of the present invention. [Figure 6] This is a perspective view showing a magnetoresistive element in the first embodiment of the present invention. [Figure 7] This is a plan view showing a first electronic component in a first embodiment of the present invention. [Figure 8] This is a cross-sectional view showing a first electronic component in a first embodiment of the present invention. [Figure 9] This is a plan view showing the first conductive layer in the first embodiment of the present invention. [Figure 10] This is a plan view showing the second conductive layer in the first embodiment of the present invention. [Figure 11] This is a plan view showing an enlarged portion of the conductive layer in the first embodiment of the present invention. [Figure 12] This is a plan view showing an enlarged view of another part of the conductive layer in the first embodiment of the present invention. [Figure 13]It is a plan view showing a conductor layer of the first modification in the first embodiment of the present invention. [Figure 14] It is a plan view showing a conductor layer of the second modification in the first embodiment of the present invention. [Figure 15] It is a plan view showing a conductor layer of the third modification in the first embodiment of the present invention. [Figure 16] It is a cross-sectional view showing an electronic component in the second embodiment of the present invention. [Figure 17] It is a circuit diagram showing a circuit configuration of a magnetic sensor in the third embodiment of the present invention. [Figure 18] It is a plan view showing a part of the first conductor layer in the third embodiment of the present invention. [Figure 19] It is a plan view showing a part of the second conductor layer in the third embodiment of the present invention. [Figure 20] It is a cross-sectional view showing an electronic component in the fourth embodiment of the present invention. [[ID=QQQ]] [Figure 21] It is a perspective view showing a configuration of a current sensor system in the fifth embodiment of the present invention. [Figure 22] It is a cross-sectional view showing a magnetic sensor device according to the fifth embodiment of the present invention. [Figure 23] It is a block diagram showing a configuration of a current sensor system according to the fifth embodiment of the present invention. [Figure 24] It is a circuit diagram showing a circuit configuration of a magnetic sensor in the fifth embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0012] [First Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, with reference to Figure 1, the general configuration of a magnetic sensor system equipped with a magnetic sensor device according to the first embodiment of the present invention will be described. Figure 1 is a perspective view showing the magnetic sensor system 100 in this embodiment. The magnetic sensor system 100 in this embodiment comprises a magnetic sensor device 1 according to this embodiment and a magnetic field generator 101. The magnetic field generator 101 generates a target magnetic field MF, which is the magnetic field that the magnetic sensor device 1 is to detect.

[0013] In this embodiment, the magnetic field generator 101 is a cylindrical magnet. The magnetic field generator 101 has a north pole and a south pole that are symmetrically arranged around a virtual plane containing the central axis of the cylinder. The magnetic field generator 101 rotates around the central axis of the cylinder. As a result, the direction of the target magnetic field MF generated by the magnetic field generator 101 rotates around the axis of rotation C containing the central axis of the cylinder.

[0014] The magnetic sensor device 1 is positioned to detect a target magnetic field MF at a predetermined reference position PR. The reference position PR may be on the rotation axis C. In the following description, the reference position PR is assumed to be on the rotation axis C. The magnetic sensor device 1 detects the target magnetic field MF generated by the magnetic field generator 101 and generates at least one detection signal. The at least one detection signal corresponds to the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1, in particular to the rotational position of the magnetic field generator 101.

[0015] Here, a virtual plane parallel to one end face of the magnetic field generator 101, which includes the reference position PR, is called the reference plane. Within this reference plane, the direction of the target magnetic field MF rotates around the reference position PR. The reference direction is located within the reference plane and intersects with the reference position PR. In the following description, the direction of the target magnetic field MF at the reference position PR refers to the direction located within the reference plane. The magnetic sensor device 1 is configured to generate an angle detection value θs that corresponds to the direction of the target magnetic field MF at the reference position PR.

[0016] Next, the configuration of the magnetic sensor device 1 will be described with reference to Figures 2 and 3. Figure 2 is a perspective view showing the magnetic sensor device 1. Figure 3 is a functional block diagram showing the configuration of the magnetic sensor device 1. As shown in Figures 2 and 3, the magnetic sensor device 1 includes a magnetic sensor 2 configured to detect a target magnetic field MF (see Figure 1) and generate at least one detection signal, a magnetic field generator 3 configured to generate a magnetic field applied to the magnetic sensor 2, and a processor 4 configured to generate an angle detection value θs based on at least one detection signal. The processor 4 is configured, for example, by an application-specific integrated circuit (ASIC).

[0017] In this embodiment, the magnetic field generator 3 and the processor 4 are configured to be integrated into a single electronic component. The magnetic sensor 2 is configured to be a separate electronic component from the magnetic field generator 3 and the processor 4. Hereinafter, the electronic component including the magnetic sensor 2 will be referred to as the first electronic component 5, and the electronic component including the magnetic field generator 3 and the processor 4 will be referred to as the second electronic component 6. The magnetic sensor device 1 comprises the first electronic component 5 and the second electronic component 6.

[0018] Each of the first and second electronic components 5 and 6 has the form of a rectangular parallelepiped chip. The first electronic component 5 has an upper surface 5a and a lower surface 5b located opposite each other, and four sides connecting the upper surface 5a and the lower surface 5b. The second electronic component 6 has an upper surface 6a and a lower surface 6b located opposite each other, and four sides connecting the upper surface 6a and the lower surface 6b. The first electronic component 5 is mounted on the upper surface 6a of the second electronic component 6 with its lower surface 5b facing the upper surface 6a of the second electronic component 6. The first electronic component 5 is joined to the second electronic component 6, for example, by adhesive.

[0019] In the second electronic component 6, the magnetic field generator 3 is stacked on top of the processor 4. When the first electronic component 5 is mounted on the second electronic component 6, the magnetic field generator 3 is positioned between the magnetic sensor 2 and the processor 4.

[0020] Here, as shown in Figure 2, we define the X, Y, and Z directions. The X, Y, and Z directions are orthogonal to each other. In this embodiment, the Z direction is defined as the direction perpendicular to the upper surface 5a of the first electronic component 5, and the direction from the lower surface 5b of the first electronic component 5 toward the upper surface 5a. Furthermore, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The magnetic sensor 2 and the magnetic field generator 3 can be said to be stacked in a direction parallel to the Z direction.

[0021] Hereinafter, the position at the end of the Z-direction relative to the reference position will be referred to as "above," and the position opposite to the "above" position relative to the reference position will be referred to as "below." Furthermore, with respect to the components of the magnetic sensor device 1, the surface located at the end in the Z-direction will be referred to as the "top surface," and the surface located at the end in the -Z-direction will be referred to as the "bottom surface." Also, the expression "when viewed from the Z-direction" means viewing the object from a position far away in the Z-direction.

[0022] The first electronic component 5 has a plurality of first pads (electrode pads) provided on its upper surface 5a. The second electronic component 6 has a plurality of second pads (electrode pads) provided on its upper surface 6a. In the magnetic sensor device 1, two corresponding pads from the plurality of first pads and the plurality of second pads are connected to each other by bonding wires.

[0023] The magnetic sensor 2 includes a first detection circuit 10 and a second detection circuit 20. The first and second detection circuits 10 and 20 and the processor 4 are connected via a plurality of first pads, a plurality of second pads, and a plurality of bonding wires.

[0024] Each of the first and second detection circuits 10 and 20 includes a plurality of magnetic detection elements. In this embodiment, the plurality of magnetic detection elements are a plurality of magnetoresistive elements. Hereinafter, magnetoresistive elements will be referred to as MR elements.

[0025] The first detection circuit 10 detects a component of the target magnetic field MF in a first direction and generates at least one first detection signal corresponding to this component. The second detection circuit 20 detects a component of the target magnetic field MF in a second direction and generates at least one second detection signal corresponding to this component. In this embodiment, the first direction is parallel to the X direction, and the second direction is parallel to the Y direction.

[0026] The processor 4 is configured to generate an angle detection value θs based on at least one first detection signal and at least one second detection signal.

[0027] The magnetic field generator 3 is configured to generate a first magnetic field and a second magnetic field. The magnetic field generator 3 is supplied with a driving current from the processor 4 to generate the first magnetic field and the second magnetic field. The driving current may be a direct current or an alternating current. When a direct current is supplied to the magnetic field generator 3, the direction and intensity of the first and second magnetic fields remain constant. When an alternating current is supplied to the magnetic field generator 3, the direction and intensity of the first and second magnetic fields change periodically.

[0028] The first magnetic field includes a first magnetic field component applied to the first detection circuit 10. The second magnetic field includes a second magnetic field component applied to the second detection circuit 20. The direction of the first magnetic field component is parallel to the first direction, i.e., the X direction or the -X direction. The direction of the second magnetic field component is parallel to the second direction, i.e., the Y direction or the -Y direction. The operation of the magnetic field generator 3 is controlled, for example, by the processor 4.

[0029] The first magnetic field is used, for example, to measure the sensitivity of the first detection circuit 10. Specifically, the sensitivity of the first detection circuit 10 is measured by, for example, measuring the magnitude of at least one first detection signal while varying the strength of the first magnetic field. The second magnetic field is used, for example, to measure the sensitivity of the second detection circuit 20. Specifically, the sensitivity of the second detection circuit 20 is measured by, for example, measuring the magnitude of at least one second detection signal while varying the strength of the second magnetic field.

[0030] Next, the circuit configuration of the magnetic sensor 2 will be described with reference to Figure 4. Figure 4 is a circuit diagram showing the circuit configuration of the magnetic sensor 2.

[0031] The first detection circuit 10 includes four resistors R11, R12, R13, and R14, a power port V1, a ground port G1, and two output ports E11 and E12. Resistor R11 is located between the power port V1 and the output port E11. Resistor R12 is located between the output port E11 and the ground port G1. Resistor R13 is located between the output port E12 and the ground port G1. Resistor R14 is located between the power port V1 and the output port E12. A predetermined voltage or current is applied to the power port V1. The ground port G1 is connected to ground.

[0032] The second detection circuit 20 includes four resistors R21, R22, R23, and R24, a power port V2, a ground port G2, and two output ports E21 and E22. Resistor R21 is located between the power port V2 and the output port E21. Resistor R22 is located between the output port E21 and the ground port G2. Resistor R23 is located between the output port E22 and the ground port G2. Resistor R24 ​​is located between the power port V2 and the output port E22. A predetermined voltage or current is applied to the power port V2. The ground port G2 is connected to ground.

[0033] Here, the resistive sections R11-R14 and R21-R24 will be described with reference to Figures 5 and 6. Each of the resistive sections R11-R14 and R21-R24 contains multiple MR elements 50. Figure 5 is a perspective view showing a portion of one of the resistive sections R21-R24. Figure 6 is a perspective view showing the MR elements 50.

[0034] Each of the resistive sections R11-R14 and R21-R24 further includes a plurality of lower electrodes 61 and a plurality of upper electrodes 62. Each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 in the longitudinal direction. As shown in Figure 5, MR elements 50 are arranged near both ends in the longitudinal direction on the upper surface of the lower electrodes 61. The plurality of upper electrodes 62 are arranged on the plurality of MR elements 50. Each upper electrode 62 has an elongated shape and is arranged on two adjacent lower electrodes 61 in the longitudinal direction to electrically connect two adjacent MR elements 50. With this configuration, each of the resistive sections R11-R14 and R21-R24 includes a plurality of MR elements 50 connected in series by the plurality of lower electrodes 61 and the plurality of upper electrodes 62.

[0035] In this embodiment, each of the multiple MR elements 50 is a spin-valve type MR element. This spin-valve type MR element includes a magnetization fixed layer 52 having magnetization with a fixed direction, a free layer 54 having magnetization whose direction can change according to the direction of the target magnetic field MF, and a gap layer 53 disposed between the magnetization fixed layer 52 and the free layer 54. The spin-valve type MR element may be a TMR (tunnel magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a non-magnetic conductive layer. In a spin-valve type MR element, the resistance value changes according to the angle that the direction of magnetization of the free layer 54 makes with respect to the direction of magnetization of the magnetization fixed layer 52. The resistance value is at its minimum when the angle is 0° and at its maximum when the angle is 180°. In each MR element 50, the free layer 54 has shape anisotropy such that its easy magnetization axis direction is perpendicular to the magnetization direction of the fixed magnetization layer 52.

[0036] The MR element 50 further includes an antiferromagnetic layer 51. The antiferromagnetic layer 51, magnetization fixed layer 52, gap layer 53, and free layer 54 are stacked in this order from the lower electrode 61 side. Note that the arrangement of layers 51 to 54 in the MR element 50 may be reversed in order from the arrangement shown in Figure 6. The antiferromagnetic layer 51 is made of an antiferromagnetic material and creates exchange coupling with the magnetization fixed layer 52 to fix the magnetization direction of the magnetization fixed layer 52. Note that the magnetization fixed layer 52 may be a so-called self-pinned fixed layer (Synthetic Ferri Pinned layer, SFP layer). The self-pinned fixed layer has a stacked ferri structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and the two ferromagnetic layers are antiferromagnetically coupled. If the magnetization fixed layer 52 is a self-pinned fixed layer, the antiferromagnetic layer 51 may be omitted.

[0037] In Figure 4, the filled arrows indicate the direction of magnetization of the magnetization fixed layer 52 in each of the resistive sections R11-R14 and R21-R24. In the example shown in Figure 4, the direction of magnetization of the magnetization fixed layer 52 in each of the resistive sections R11 and R13 is in the X direction. The direction of magnetization of the magnetization fixed layer 52 in each of the resistive sections R12 and R14 is in the -X direction. The free layer 54 in each of the resistive sections R11-R14 has shape anisotropy such that the easy magnetization axis direction is parallel to the Y direction.

[0038] The magnetization direction of the fixed magnetization layer 52 in each of the resistive sections R21 and R23 is in the Y direction. The magnetization direction of the fixed magnetization layer 52 in each of the resistive sections R22 and R24 is in the -Y direction. The free layer 54 in each of the resistive sections R21 to R24 has shape anisotropy such that the easy magnetization axis direction is parallel to the X direction.

[0039] In the first detection circuit 10, the potential at the connection point of resistors R11 and R12, i.e., the potential of output port E11, and the potential at the connection point of resistors R13 and R14, i.e., the potential of output port E12, change according to the strength of the component of the target magnetic field MF in a first direction (a direction parallel to the X direction). The first detection circuit 10 may generate a signal corresponding to the potential of output port E11 and a signal corresponding to the potential of output port E12 as first detection signals, respectively. Alternatively, the first detection circuit 10 may generate a signal corresponding to the potential difference between output ports E11 and E12 as the first detection signal. In this case, the first detection circuit 10 may further include a differential amplifier (difference detector) that outputs a signal corresponding to the potential difference between output ports E11 and E12 as the first detection signal.

[0040] In the second detection circuit 20, the potential at the connection point of resistors R21 and R22, i.e., the potential of output port E21, and the potential at the connection point of resistors R23 and R24, i.e., the potential of output port E22, change according to the strength of the component of the target magnetic field MF in the second direction (parallel to the Y direction). The second detection circuit 20 may generate a signal corresponding to the potential of output port E21 and a signal corresponding to the potential of output port E22 as second detection signals, respectively. Alternatively, the second detection circuit 20 may generate a signal corresponding to the potential difference between output ports E21 and E22 as a second detection signal. In this case, the second detection circuit 20 may further include a differential amplifier that outputs a signal corresponding to the potential difference between output ports E21 and E22 as a second detection signal.

[0041] Here, we will explain how to generate the angle detection value θs. First, we will explain the case where the first detection circuit 10 generates a signal corresponding to the potential of output port E11 and a signal corresponding to the potential of output port E12 as first detection signals, and the second detection circuit 20 generates a signal corresponding to the potential of output port E21 and a signal corresponding to the potential of output port E22 as second detection signals. The processor 4 first generates a first signal S1 by a calculation that includes finding the difference between the two first detection signals, and generates a second signal S2 by a calculation that includes finding the difference between the two second detection signals. The processor 4 may be configured to correct the amplitude, phase, and offset of the first and second signals S1 and S2, respectively.

[0042] Processor 4 then calculates the angle detection value θs within the range of 0° to less than 360° using, for example, equation (1) below. Note that "atan" represents the arctangent.

[0043] θs = atan(S² / S¹) …(1)

[0044] Next, we will describe the case in which the first detection circuit 10 generates a signal corresponding to the potential difference between output ports E11 and E12 as the first detection signal, and the second detection circuit 20 generates a signal corresponding to the potential difference between output ports E21 and E22 as the second detection signal. In this case, the processor 4 acquires the signal corresponding to the first detection signal as the first signal S1, and the signal corresponding to the second detection signal as the second signal S2. The processor 4 may acquire the first and second detection signals as the first and second signals S1 and S2, or it may acquire two signals obtained by correcting at least one of the amplitude, phase, and offset of the first and second detection signals as the first and second signals S1 and S2. The processor 4 then calculates an angle detection value θs in the range of 0° or more and less than 360° using equation (1).

[0045] Next, the configuration of the first electronic component 5 will be described with reference to Figures 7 and 8. Figure 7 is a plan view showing the first electronic component 5. Figure 8 is a cross-sectional view showing the first electronic component 5.

[0046] In Figure 7, the rectangular region denoted by the symbol A10 indicates the region where multiple MR elements 50 constituting the resistors R11 to R14 of the first detection circuit 10 are arranged. The rectangular region denoted by the symbol A20 indicates the region where multiple MR elements 50 constituting the resistors R21 to R24 of the second detection circuit 20 are arranged. In the example shown in Figure 7, regions A10 and A20 are arranged in this order in the X direction. Regions A10 and A20 may also be arranged in the Y direction. Alternatively, at least one of regions A10 and A20 may include multiple subregions arranged at mutually separated positions.

[0047] Here, the multiple MR elements 50 constituting the resistors R11 to R14 of the first detection circuit 10 are denoted by reference numeral 50A, the multiple lower electrodes 61 connected to the multiple MR elements 50A are denoted by reference numeral 61A, and the multiple upper electrodes 62 connected to the multiple MR elements 50A are denoted by reference numeral 62A. Similarly, the multiple MR elements 50 constituting the resistors R21 to R24 of the second detection circuit 20 are denoted by reference numeral 50B, the multiple lower electrodes 61 connected to the multiple MR elements 50B are denoted by reference numeral 61B, and the multiple upper electrodes 62 connected to the multiple MR elements 50B are denoted by reference numeral 62B. The first electronic component 5 includes multiple MR elements 50A, multiple MR elements 50B, multiple lower electrodes 61A, multiple lower electrodes 61B, multiple upper electrodes 62A, and multiple upper electrodes 62B.

[0048] The first electronic component 5 further includes a substrate 41 and insulating layers 42, 43, 44, 45, and 46. The insulating layer 42 is located on the substrate 41. Multiple lower electrodes 61A and multiple lower electrodes 61B are located on the insulating layer 42. The insulating layer 43 is located on the insulating layer 42, around the multiple lower electrodes 61A and around the multiple lower electrodes 61B. Multiple MR elements 50A are located on the multiple lower electrodes 61A. Multiple MR elements 50B are located on the multiple lower electrodes 61B. The insulating layer 44 is located on the insulating layer 43, the multiple lower electrodes 61A and multiple lower electrodes 61B, around the multiple MR elements 50A and around the multiple MR elements 50B.

[0049] Multiple upper electrodes 62A are arranged on the insulating layer 44 and multiple MR elements 50A. Multiple upper electrodes 62B are arranged on the insulating layer 44 and multiple MR elements 50B. The insulating layer 45 is arranged on the insulating layer 44 around the multiple upper electrodes 62A and around the multiple upper electrodes 62B. The insulating layer 46 is arranged on the insulating layer 45, the multiple upper electrodes 62A and the multiple upper electrodes 62B.

[0050] Next, the magnetic field generator 3 will be described with reference to Figures 9 and 10. Figure 9 is a plan view showing the first conductor layer in this embodiment. Figure 10 is a plan view showing the second conductor layer in this embodiment.

[0051] The magnetic field generator 3 includes a first conductive layer 30A and a second conductive layer 30B, each made of a conductive material such as Cu, Au, or Al. The first conductive layer 30A is configured to generate a first magnetic field including a first magnetic field component applied to the first detection circuit 10. The second conductive layer 30B is configured to generate a second magnetic field including a second magnetic field component applied to the second detection circuit 20.

[0052] As shown in Figure 9, the first conductor layer 30A includes a first end 30Aa, a second end 30Ab, a plurality of main wirings 31A provided between the first end 30Aa and the second end 30Ab and separated from each other, a first sub-wiring 32A that electrically connects the first end 30Aa and the plurality of main wirings 31A, and a second sub-wiring 33A that electrically connects the second end 30Ab and the plurality of main wirings 31A. The first end 30Aa and the second end 30Ab are each connected to the processor 4 (see Figure 3).

[0053] The region A10 in which the multiple MR elements 50A constituting the resistors R11 to R14 of the first detection circuit 10 are arranged overlaps with the multiple main wirings 31A when viewed from the Z direction. Furthermore, region A10 is located between the first sub-wiring 32A and the second sub-wiring 33A when viewed from the Z direction. In other words, the multiple MR elements 50A are located between the first sub-wiring 32A and the second sub-wiring 33A when viewed from the Z direction. Within region A10, the intensity of the first magnetic field component is the same or approximately the same. Therefore, the intensity of the first magnetic field component applied to each of the multiple MR elements 50A is the same or approximately the same.

[0054] The multiple main wires 31A are for generating a first magnetic field. In this embodiment, each of the multiple main wires 31A extends in a direction parallel to the Y direction. The first end 30Aa is located ahead of the multiple main wires 31A in the Y direction. The second end 30Ab is located ahead of the multiple main wires 31A in the -Y direction. When current is passed through the first conductor layer 30A from the first end 30Aa to the second end 30Ab, the direction of the current flowing through each of the multiple main wires 31A becomes the -Y direction, and a first magnetic field is generated that includes a magnetic field component in the -X direction as a first magnetic field component. When current is passed through the first conductor layer 30A from the second end 30Ab to the first end 30Aa, the direction of the current flowing through each of the multiple main wires 31A becomes the Y direction, and a first magnetic field is generated that includes a magnetic field component in the X direction as a first magnetic field component.

[0055] As shown in Figure 10, the second conductor layer 30B includes a first end 30Ba, a second end 30Bb, a plurality of main wirings 31B provided between the first end 30Ba and the second end 30Bb and separated from each other, a first sub-wiring 32B that electrically connects the first end 30Ba and the plurality of main wirings 31B, and a second sub-wiring 33B that electrically connects the second end 30Bb and the plurality of main wirings 31B. The first end 30Ba and the second end 30Bb are each connected to the processor 4 (see Figure 3).

[0056] The region A20 in which the multiple MR elements 50B constituting the resistors R21 to R24 of the second detection circuit 20 are arranged overlaps with the multiple main wirings 31B when viewed from the Z direction. Furthermore, region A20 is located between the first sub-wiring 32B and the second sub-wiring 33B when viewed from the Z direction. In other words, the multiple MR elements 50B are located between the first sub-wiring 32B and the second sub-wiring 33B when viewed from the Z direction. Within region A20, the strength of the second magnetic field component is the same or approximately the same. Therefore, the strength of the second magnetic field component applied to each of the multiple MR elements 50B is the same or approximately the same.

[0057] The multiple main wirings 31B are for generating a second magnetic field. In this embodiment, each of the multiple main wirings 31B extends in a direction parallel to the X direction. The first end 30Ba is located ahead of the multiple main wirings 31A in the -X direction. The second end 30Bb is located ahead of the multiple main wirings 31A in the X direction. When current is passed through the second conductor layer 30B from the first end 30Ba to the second end 30Bb, the direction of the current flowing through each of the multiple main wirings 31B becomes the X direction, and a second magnetic field is generated that includes a magnetic field component in the -Y direction as a second magnetic field component. When current is passed through the second conductor layer 30B from the second end 30Bb to the first end 30Ba, the direction of the current flowing through each of the multiple main wirings 31B becomes the -X direction, and a second magnetic field is generated that includes a magnetic field component in the Y direction as a second magnetic field component.

[0058] Here, any conductor layer among the first and second conductor layers 30A and 30B is denoted by the reference numeral 30. The first end of a conductor layer 30 corresponding to the first end 30Aa or the first end 30Ba is denoted by the reference numeral 30a. The second end of a conductor layer 30 corresponding to the second end 30Ab or the second end 30Bb is denoted by the reference numeral 30b. Multiple main wirings of a conductor layer 30 corresponding to multiple main wirings 31A or multiple main wirings 31B are denoted by the reference numeral 31. The first secondary wiring of a conductor layer 30 corresponding to the first secondary wiring 32A or the first secondary wiring 32B is denoted by the reference numeral 32. The second secondary wiring of a conductor layer 30 corresponding to the second secondary wiring 33A or the second secondary wiring 33B is denoted by the reference numeral 33.

[0059] The configuration of the conductor layer 30 will be described in detail below with reference to Figures 11 and 12. Figure 11 is a plan view showing a part of the conductor layer 30. Figure 12 is a plan view showing another part of the conductor layer 30. In the following description, the extension direction refers to the extension direction of each of the multiple main wirings 31.

[0060] In the examples shown in Figures 11 and 12, the conductor layer 30 includes eight main wirings 311, 312, 313, 314, 315, 316, 317, and 318 as a plurality of main wirings 31. The main wirings 311, 312, 313, 314, 315, 316, 317, and 318 are arranged in this order in a direction perpendicular to the direction of extension. Here, any one of the main wirings 311 to 318 is called the first main wiring, and the two main wirings adjacent to both sides of this first main wiring are called the second main wiring and the third main wiring. The spacing between the first main wiring and the second main wiring and the spacing between the first main wiring and the third main wiring may be the same.

[0061] First, the features relating to the first sub-wiring 32 will be described. The first sub-wiring 32 includes a plurality of first paths leading from the first end 30a to each of the plurality of main wirings 31. Each of the plurality of first paths passes through a plurality of first connection points to which the first sub-wiring 32 branches. The number of plurality of first connection points that each of any two of the plurality of first paths passes through is the same. In particular in this embodiment, the number of plurality of first connection points that each of the first paths passes through is the same.

[0062] In the example shown in Figure 11, the first sub-wiring 32 includes a plurality of wiring portions 3200, 3201, 3202, 3203, 3204, 3205, 3206, 3207, 3208, 3209, 3210, 3211, 3212, 3213, and 3214, and a plurality of first connecting portions 3221, 3222, 3223, 3224, 3225, 3226, and 3227. The first sub-wiring 32 is constructed by electrically connecting the plurality of wiring portions 3200 to 3214 with the plurality of first connecting portions 3221 to 3227.

[0063] Wiring sections 3200, 3201, and 3202 are connected to the first connecting section 3221. Wiring sections 3201, 3203, and 3204 are connected to the first connecting section 3222. Wiring sections 3202, 3205, and 3206 are connected to the first connecting section 3223. Wiring sections 3203, 3207, and 3208 are connected to the first connecting section 3224. Wiring sections 3204, 3209, and 3210 are connected to the first connecting section 3225. Wiring sections 3205, 3211, and 3212 are connected to the first connecting section 3226. Wiring sections 3206, 3213, and 3214 are connected to the first connecting section 3227.

[0064] Wiring section 3200 is connected to the first end 30a. Wiring section 3207 is connected to the main wiring 311. Wiring section 3208 is connected to the main wiring 312. Wiring section 3209 is connected to the main wiring 313. Wiring section 3210 is connected to the main wiring 314. Wiring section 3211 is connected to the main wiring 315. Wiring section 3212 is connected to the main wiring 316. Wiring section 3213 is connected to the main wiring 317. Wiring section 3214 is connected to the main wiring 318.

[0065] In the example shown in Figure 11, the paths from the first end 30a to the main wiring 311 and from the first end 30a to the main wiring 312 pass through the first connecting parts 3221, 3222, and 3224. The paths from the first end 30a to the main wiring 313 and from the first end 30a to the main wiring 314 pass through the first connecting parts 3221, 3222, and 3225. The paths from the first end 30a to the main wiring 315 and from the first end 30a to the main wiring 316 pass through the first connecting parts 3221, 3223, and 3226. The paths from the first end 30a to the main wiring 317 and from the first end 30a to the main wiring 318 pass through the first connecting parts 3221, 3223, and 3227.

[0066] Thus, in the example shown in Figure 11, the number of first connections that each of any two first paths among the multiple first paths passes through is three. In particular, in the example shown in Figure 11, the number of first connections that each of the multiple first paths passes through is three in all cases.

[0067] Furthermore, each of the multiple first connecting portions 3221 to 3227 includes at least one specific connecting portion in which three of the multiple wiring portions 3200 to 3214 are electrically connected. In this embodiment in particular, each of the multiple first connecting portions 3221 to 3227 is one of the specific connecting portions described above.

[0068] Here, we focus on two first connecting parts connected via one wiring section in each of the multiple first paths. Preferably, the distance between these two first connecting parts in the extending direction is greater than or equal to the width of the one wiring section multiplied by the square root of 2.

[0069] Next, the features related to the second sub-wiring 33 will be described. The number of second connection points that each of any two of the multiple second paths passes through is the same. In particular, in this embodiment, the number of second connection points that each of the multiple second paths passes through is the same.

[0070] In the example shown in Figure 12, the second auxiliary wiring 33 includes multiple wiring sections 3300, 3301, 3302, 3303, 3304, 3305, 3306, 3307, 3308, 3309, 3310, 3311, 3312, 3313, and 3314, and multiple second connecting sections 3321, 3322, 3323, 3324, 3325, 3326, and 3327. The second auxiliary wiring 33 is constructed by electrically connecting the multiple wiring sections 3300 to 3314 with the multiple second connecting sections 3321 to 3327.

[0071] Wiring sections 3300, 3301, and 3302 are connected to the second connecting section 3321. Wiring sections 3301, 3303, and 3304 are connected to the second connecting section 3322. Wiring sections 3302, 3305, and 3306 are connected to the second connecting section 3323. Wiring sections 3303, 3307, and 3308 are connected to the second connecting section 3324. Wiring sections 3304, 3309, and 3310 are connected to the second connecting section 3325. Wiring sections 3305, 3311, and 3312 are connected to the second connecting section 3326. Wiring sections 3306, 3313, and 3314 are connected to the second connecting section 3327.

[0072] Wiring section 3300 is connected to the second terminal 30b. Wiring section 3307 is connected to the main wiring 311. Wiring section 3308 is connected to the main wiring 312. Wiring section 3309 is connected to the main wiring 313. Wiring section 3310 is connected to the main wiring 314. Wiring section 3311 is connected to the main wiring 315. Wiring section 3312 is connected to the main wiring 316. Wiring section 3313 is connected to the main wiring 317. Wiring section 3314 is connected to the main wiring 318.

[0073] In the example shown in Figure 12, the paths from the second end 30b to the main wiring 311 and from the second end 30b to the main wiring 312 pass through the second connecting parts 3321, 3322, and 3324. The paths from the second end 30b to the main wiring 313 and from the second end 30b to the main wiring 314 pass through the second connecting parts 3321, 3322, and 3325. The paths from the second end 30b to the main wiring 315 and from the second end 30b to the main wiring 316 pass through the second connecting parts 3321, 3323, and 3326. The paths from the second end 30b to the main wiring 317 and from the second end 30b to the main wiring 318 pass through the second connecting parts 3321, 3323, and 3327.

[0074] Thus, in the example shown in Figure 12, the number of second connections that each of any two of the multiple second paths passes through is three. In particular, in the example shown in Figure 12, the number of second connections that each of the multiple second paths passes through is three in all cases.

[0075] Furthermore, each of the multiple second connecting portions 3321 to 3327 includes at least one specific connecting portion in which three of the multiple wiring portions 3300 to 3314 are electrically connected. In this embodiment in particular, each of the multiple second connecting portions 3321 to 3327 is one of the specific connecting portions described above.

[0076] Here, we focus on two second connection points connected via one wiring section in each of the multiple second paths. Preferably, the distance between these two second connection points in the extending direction is greater than or equal to the width of the one wiring section multiplied by the square root of 2.

[0077] Next, we will explain the number of multiple first connection points and the number of multiple second connection points. Here, let n be the number of multiple main wirings 31. The sum of the number of multiple first connection points and the number of multiple second connection points is 2(n-1). In the examples shown in Figures 11 and 12, the number of main wirings 311 to 318 is 8, and the sum of the number of multiple first connection points 3221 to 3227 and the number of multiple second connection points 3321 to 3327 is 14.

[0078] Next, the shape of the conductor layer 30 will be described. It is preferable that the conductor layer 30 has a symmetrical shape with respect to a virtual plane that intersects with the first end 30a and the second end 30b. In the example shown in Figure 11, the multiple main wirings 31 are symmetrical with respect to the virtual plane. Symmetry In addition to having a specific shape, each of the first sub-wiring 32 and the second sub-wiring 33 has a symmetrical shape with respect to the aforementioned virtual plane.

[0079] The cross-sectional shape of each of the multiple main wirings 31 may be rectangular. 32The cross-sectional shape of each of the multiple wiring sections may be rectangular. Second sub-wiring 33 The cross-sectional shape of each of the multiple wiring sections may be rectangular.

[0080] Next, the operation and effects of the magnetic sensor device 1 according to this embodiment will be described. In the magnetic sensor device 1 according to this embodiment, the number of first connection points that each of any two first paths passes through is the same. As a result, according to this embodiment, the current density in any two first paths can be made uniform compared to the case where the number of first connection points that each of any two first paths passes through is different. Similarly, in this embodiment, the number of second connection points that each of any two second paths passes through is the same. As a result, according to this embodiment, the current density in any two second paths can be made uniform compared to the case where the number of second connection points that each of any two second paths passes through is different.

[0081] Furthermore, according to this embodiment, by connecting one of the two first paths and one of the two second paths to the same main wiring 31, and connecting the other of the two first paths and the other of the two second paths to the same other main wiring, the current density in each of these two main wirings 31 can be made uniform.

[0082] In this embodiment, in particular, the number of first connection points through which each of the multiple first paths passes is the same, and the number of second connection points through which each of the multiple second paths passes is the same. As a result, according to this embodiment, the current density in each of the multiple main wirings 31 can be made uniform. As a result, according to this embodiment, the strength of the magnetic field generated from each of the multiple main wirings 31 can be made uniform. Consequently, according to this embodiment, the strength of the first magnetic field component applied to the multiple MR elements 50A constituting the resistance sections R11 to R14 of the first detection circuit 10 of the magnetic sensor 2 can be made uniform, and the strength of the second magnetic field component applied to the multiple MR elements 50B constituting the resistance sections R21 to R24 of the second detection circuit 20 of the magnetic sensor 2 can be made uniform.

[0083] Furthermore, in this embodiment, each of the multiple main wirings 31 has a shape that is elongated in one direction and has one end closest to the first end 30a and the other end closest to the second end 30b. According to this embodiment, by making the number of first connection points that each of the multiple first paths passes through the same, and the number of second connection points that each of the multiple second paths passes through the same, the lengths of each of the multiple first paths and the lengths of each of the multiple second paths can be made the same. As a result, according to this embodiment, the potential difference between one end and the other end of each of the multiple main wirings 31 can be made the same. As a result, according to this embodiment, the strength of the first magnetic field component can be made uniform, and the strength of the second magnetic field component can be made uniform.

[0084] Furthermore, according to this embodiment, by making the length of each of the multiple main wirings 31 the same, making the length of each of the multiple first paths the same, and making the length of each of the multiple second paths the same, the length of each of the multiple paths from the first end 30a to the second end 30b via the first sub-wiring 32, the multiple main wirings 31, and the second sub-wiring 33 can all be made the same. In this way, according to this embodiment, the strength of the first magnetic field component can be made uniform, as can the strength of the second magnetic field component.

[0085] Furthermore, according to this embodiment, by making the cross-sectional area of ​​each of the multiple main wirings 31 the same, making the cross-sectional area of ​​each of the multiple wiring portions 3200 to 3214 of the first sub-wiring 32 the same, making the cross-sectional area of ​​each of the multiple wiring portions 3300 to 3314 of the second sub-wiring 33 the same, and then making the length of each of the multiple paths the same, the resistance value of each of the multiple paths can be made the same. In this way, according to this embodiment, the strength of the first magnetic field component can be made uniform, and the strength of the second magnetic field component can also be made uniform.

[0086] [Differentiation] Next, a modified example of the conductor layer 30 of the magnetic field generator 3 in this embodiment will be described. First, with reference to Figure 13, the conductor layer of the first modified example will be described. Figure 13 is a plan view showing the conductor layer 30C of the first modified example. The conductor layer 30C includes a first end 30Ca, a second end 30Cb, a plurality of main wirings 31C provided between the first end 30Ca and the second end 30Cb and separated from each other, a first sub-wiring 32C that electrically connects the first end 30Ca and the plurality of main wirings 31C, and a second sub-wiring 33C that electrically connects the second end 30Cb and the plurality of main wirings 31C.

[0087] The first sub-wiring 32C includes multiple first paths from the first end 30Ca to each of the multiple main wirings 31C. Each of the multiple first paths passes through a plurality of first connection points to which the first sub-wiring 32C branches. Each of the multiple first paths passes through four of the plurality of first connection points.

[0088] The second auxiliary wiring 33C includes multiple second paths from the second end 30Cb to each of the multiple main wirings 31C. Each of the multiple second paths passes through a plurality of second connection points to which the second auxiliary wiring 33C branches. Each of the multiple second paths passes through four plurality of second connection points.

[0089] In the conductor layer 30C of the first modified example, the number of main wirings 31C is 16, and the sum of the number of first connections and the number of second connections is 30.

[0090] Next, with reference to Figure 14, a conductor layer of a second modified example will be described. Figure 14 is a plan view showing the conductor layer 30D of the second modified example. The conductor layer 30D includes a first end 30Da, a second end 30Db, a plurality of main wirings 31D provided between the first end 30Da and the second end 30Db and separated from each other, a first sub-wiring 32D that electrically connects the first end 30Da and the plurality of main wirings 31D, and a second sub-wiring 33D that electrically connects the second end 30Db and the plurality of main wirings 31D.

[0091] The first sub-wiring 32D includes a plurality of first paths from the first end 30Da to each of the plurality of main wirings 31D. Each of the plurality of first paths passes through a plurality of first junctions through which the first sub-wiring 32D branches. Each of the plurality of first paths passes through two plurality of first junctions. The plurality of first paths includes four first paths having a first length, two first paths having a second length shorter than the first length, two first paths having a third length shorter than the second length, and one first path having a fourth length shorter than the third length.

[0092] The second auxiliary wiring 33D includes a plurality of second paths from the second terminal 30Db to each of the plurality of main wirings 31D. Each of the plurality of second paths passes through a plurality of second junctions through which the second auxiliary wiring 33D branches. Each of the plurality of second paths passes through two plurality of second junctions. The plurality of second paths includes four second paths having a fifth length, two second paths having a sixth length shorter than the fifth length, two second paths having a seventh length shorter than the sixth length, and one second path having an eighth length shorter than the seventh length.

[0093] In the conductor layer 30D of the second modified example, the number of main wirings 31D is 9, and the sum of the number of first connections and the number of second connections is 8.

[0094] Next, with reference to Figure 15, a third modified conductor layer will be described. Figure 15 is a plan view showing the conductor layer 30E of the third modified example. The conductor layer 30E includes a first end 30Ea, a second end 30Eb, a plurality of main wirings 31E provided between the first end 30Ea and the second end 30Eb and separated from each other, a first sub-wiring 32E electrically connecting the first end 30Ea and the plurality of main wirings 31E, and a second sub-wiring 33E electrically connecting the second end 30Eb and the plurality of main wirings 31E.

[0095] The first sub-wiring 32E includes a plurality of first paths from the first end 30Ea to each of the plurality of main wirings 31E. Each of the plurality of first paths passes through a plurality of first junctions through which the first sub-wiring 32E branches. Each of the plurality of first paths passes through three plurality of first junctions. The plurality of first paths includes eight first paths having a first length, four first paths having a second length shorter than the first length, four first paths having a third length shorter than the second length, two first paths having a fourth length shorter than the third length, and one first path having a fifth length shorter than the fourth length.

[0096] The second auxiliary wiring 33E includes a plurality of second paths from the second end 30Eb to each of the plurality of main wirings 31E. Each of the plurality of second paths passes through a plurality of second junctions through which the second auxiliary wiring 33E branches. Each of the plurality of second paths passes through three plurality of second junctions. The plurality of second paths includes eight second paths having a sixth length, four second paths having a seventh length shorter than the sixth length, four second paths having an eighth length shorter than the seventh length, two second paths having a ninth length shorter than the eighth length, and one second path having a tenth length shorter than the ninth length.

[0097] In the conductor layer 30E of the second modified example, the number of main wirings 31E is 19, and the sum of the number of first connections and the number of second connections is 22.

[0098] [Second Embodiment] Next, a second embodiment of the present invention will be described. First, the differences between the configuration of the magnetic sensor device 1 according to this embodiment and the first embodiment will be briefly explained. In this embodiment, the magnetic sensor 2 and the magnetic field generator 3 are configured to be integrated into a single electronic component, and the processor 4 is configured to be a separate electronic component from the magnetic sensor 2 and the magnetic field generator 3. Hereinafter, the electronic component including the magnetic sensor 2 and the magnetic field generator 3 will be referred to as electronic component 105. Electronic component 105 has the form of a rectangular parallelepiped chip, similar to the first electronic component 5 or the second electronic component 6 in the first embodiment.

[0099] Next, the structure of the electronic component 105 will be described with reference to Figure 16. Figure 16 is a cross-sectional view showing the electronic component 105.

[0100] The magnetic field generator 3 includes two first conductive layers 130A1 and 130A2, each made of a conductive material, instead of the first conductive layer 30A in the first embodiment. The shape of each of the first conductive layers 130A1 and 130A2 is the same as that of the first conductive layer 30A. The first conductive layers 130A1 and 130A2 are configured to generate a first magnetic field that includes a first magnetic field component applied to the first detection circuit 10 of the magnetic sensor 2. The first conductive layers 130A1 and 130A2 are connected in series or in parallel.

[0101] Furthermore, the magnetic field generator 3 includes two second conductive layers 130B1 and 130B2, each made of a conductive material, instead of the second conductive layer 30B in the first embodiment. The shape of each of the second conductive layers 130B1 and 130B2 is the same as the shape of the second conductive layer 30B. The second conductive layers 130B1 and 130B2 are configured to generate a second magnetic field that includes a second magnetic field component applied to the second detection circuit 20 of the magnetic sensor 2. The second conductive layers 130B1 and 130B2 are connected in series or in parallel.

[0102] The electronic component 105 further includes a substrate 141 and insulating layers 142, 143, 144, 145, 146, 147, 148, 149, and 150. Insulating layer 142 is located on the substrate 141. The first conductor layer 130A1 and the second conductor layer 130B1 are located on the insulating layer 142. Insulating layer 143 is located on the insulating layer 142, around the first conductor layer 130A1 and around the second conductor layer 130B1. Insulating layer 144 is located on the first conductor layer 130A1, the second conductor layer 130B1, and insulating layer 143.

[0103] As described in the first embodiment, the first detection circuit 10 of the magnetic sensor 2 includes a plurality of MR elements 50A, a plurality of lower electrodes 61A, and a plurality of upper electrodes 62A. The second detection circuit 20 of the magnetic sensor 2 includes a plurality of MR elements 50B, a plurality of lower electrodes 61B, and a plurality of upper electrodes 62B. The plurality of lower electrodes 61A and the plurality of lower electrodes 61B are arranged on an insulating layer 144. The insulating layer 145 is arranged on the insulating layer 144 around the plurality of lower electrodes 61A and the plurality of lower electrodes 61B. The plurality of MR elements 50A are arranged on the plurality of lower electrodes 61A. The plurality of MR elements 50B are arranged on the plurality of lower electrodes 61B. The insulating layer 146 is arranged on the plurality of lower electrodes 61A, the plurality of lower electrodes 61B, and the insulating layer 145 around the plurality of MR elements 50A and the plurality of MR elements 50B.

[0104] Multiple upper electrodes 62A are arranged on multiple MR elements 50A and an insulating layer 146. Multiple upper electrodes 62B are arranged on multiple MR elements 50B and an insulating layer 146. An insulating layer 147 is arranged on the insulating layer 146, around the multiple upper electrodes 62A and around the multiple upper electrodes 62B.

[0105] The insulating layer 148 is located on a plurality of upper electrodes 62A, a plurality of upper electrodes 62B, and the insulating layer 147. The first conductor layer 130A2 and the second conductor layer 130B2 are located on the insulating layer 148. The insulating layer 149 is located on the insulating layer 148, around the first conductor layer 130A2 and around the second conductor layer 130B2. The insulating layer 150 is located on the first conductor layer 130A2, the second conductor layer 130B2, and the insulating layer 149.

[0106] In this embodiment, the multiple MR elements 50A of the first detection circuit 10 are arranged between the first conductor layer 130A1 and the first conductor layer 130A2. The magnetic field generator 3 may include only one of the first conductor layer 130A1 and the first conductor layer 130A2.

[0107] Furthermore, in this embodiment, the multiple MR elements 50B of the second detection circuit 20 are arranged between the second conductor layer 130B1 and the second conductor layer 130B2. The magnetic field generator 3 may include only one of the second conductor layers 130B1 and 130B2.

[0108] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0109] [Third Embodiment] Next, a third embodiment of the present invention will be described. First, the differences between the configuration of the magnetic sensor device 1 according to this embodiment and the first embodiment will be briefly explained. The magnetic sensor device 1 according to this embodiment includes a magnetic sensor 202 instead of the magnetic sensor 2 in the first embodiment. The first electronic component 5 (see Figure 2) includes the magnetic sensor 202. The magnetic sensor 202 includes a first detection circuit 210 and a second detection circuit 220.

[0110] The first detection circuit 210 includes a plurality of MR elements 50A, a plurality of lower electrodes 61A, and a plurality of upper electrodes 62A, similar to the first detection circuit 10 in the first embodiment. The second detection circuit 220 includes a plurality of MR elements 50B, a plurality of lower electrodes 61B, and a plurality of upper electrodes 62B, similar to the second detection circuit 20 in the first embodiment.

[0111] The magnetic sensor device 1 according to this embodiment detects the Earth's magnetic field as the target magnetic field. The first detection circuit 210 detects a component of the Earth's magnetic field in a first direction and generates at least one first detection signal corresponding to this component. The second detection circuit 220 detects a component of the Earth's magnetic field in a second direction and generates at least one second detection signal corresponding to this component. In this embodiment in particular, the first direction is parallel to the X direction, and the second direction is parallel to the Y direction.

[0112] The first and second detection circuits 210 and 220 are connected to the processor 4 (see Figure 3). The processor 4 is configured to generate detection values ​​corresponding to the intensity of the component of the Earth's magnetic field in a first direction and detection values ​​corresponding to the intensity of the component of the Earth's magnetic field in a second direction, based on at least one first detection signal and at least one second detection signal.

[0113] Next, the circuit configuration of the magnetic sensor 202 will be described with reference to Figure 17. Figure 17 is a circuit diagram showing the circuit configuration of the magnetic sensor 202.

[0114] The configuration of the first detection circuit 210 is basically the same as the configuration of the first detection circuit 10 shown in Figure 4 in the first embodiment. The first detection circuit 210 includes four resistors R11, R12, R13, and R14. Each of the resistors R11 to R14 contains multiple MR elements 50A.

[0115] Furthermore, the configuration of the second detection circuit 220 is basically the same as the configuration of the second detection circuit 20 shown in Figure 4 in the first embodiment. The second detection circuit 220 includes four resistors R21, R22, R23, and R24. Each of the resistors R21 to R24 contains multiple MR elements 50B.

[0116] As described in the first embodiment, each of the plurality of MR elements 50A and plurality of MR elements 50B includes a magnetization fixed layer 52 and a free layer 54 (see Figure 6). In Figure 17, the filled arrows indicate the direction of magnetization of the magnetization fixed layer 52 in each of the resistive sections R11-R14 and R21-R24. The direction of magnetization of the magnetization fixed layer 52 in each of the resistive sections R11-R14 and R21-R24 is the same as the direction shown in Figure 4 in the first embodiment.

[0117] In Figure 17, the white arrows indicate the direction of magnetization of the free layer 54 when no target magnetic field (external magnetic field) is applied to the first and second detection circuits 210 and 220. The free layer 54 in each of the resistive sections R11 to R14 has shape anisotropy such that its easy magnetization axis direction is parallel to the Y direction. In the example shown in Figure 17, the direction of magnetization of the free layer 54 in each of the resistive sections R11 and R12 is the Y direction when no target magnetic field (external magnetic field) is applied to the first detection circuit 210. In the above case, the direction of magnetization of the free layer 54 in each of the resistive sections R13 and R14 is the -Y direction.

[0118] The free layer 54 in each of the resistors R21 to R24 has shape anisotropy such that the easy magnetization axis direction is parallel to the X direction. In the example shown in Figure 17, the magnetization direction of the free layer 54 in each of the resistors R21 and R22 is in the X direction when no target magnetic field (external magnetic field) is applied to the second detection circuit 220. In the above case, the magnetization direction of the free layer 54 in each of the resistors R23 and R24 is in the -X direction.

[0119] Next, the configuration of the magnetic field generator 3 in this embodiment will be described. In this embodiment, the magnetic field generator 3 includes a first conductive layer 230A and a second conductive layer 230B made of a conductive material, respectively, instead of the first and second conductive layers 30A and 30B in the first embodiment.

[0120] First, the configuration of the first conductor layer 230A will be described. The first conductor layer 230A is configured to generate a first magnetic field that includes a first magnetic field component applied to a part of each of the first and second detection circuits 210 and 220.

[0121] The first conductor layer 230A has the same structure as the first conductor layer 30A in the first embodiment. That is, the first conductor layer 230A includes a first end, a second end, a plurality of main wirings 231A provided between the first end and the second end and separated from each other, a first sub-wiring that electrically connects the first end and the plurality of main wirings 231A, and a second sub-wiring that electrically connects the second end and the plurality of main wirings 231A. The first end and the second end are connected to the processor 4 (see Figure 3), respectively.

[0122] The first conductor layer 230A is positioned so as to overlap with parts of the first and second detection circuits 210 and 220 when viewed from the Z direction. The arrangement of the first conductor layer 230A will be described below with reference to Figure 18. Figure 18 is a plan view showing a part of the first conductor layer 230A.

[0123] In Figure 18, the rectangular area denoted by the symbol A211 indicates the area where multiple MR elements 50A constituting the resistor R11 of the first detection circuit 210 are arranged. The rectangular area denoted by the symbol A212 indicates the area where multiple MR elements 50A constituting the resistor R12 of the first detection circuit 210 are arranged. The rectangular area denoted by the symbol A221 indicates the area where multiple MR elements 50B constituting the resistor R21 of the second detection circuit 220 are arranged. The rectangular area denoted by the symbol A222 indicates the area where multiple MR elements 50B constituting the resistor R22 of the second detection circuit 220 are arranged.

[0124] As shown in Figure 18, region A221 is located ahead of region A211 in the X direction. Regions A212 and A222 are located ahead of regions A211 and A221 in the -Y direction, respectively. When viewed from the Z direction, regions A211, A212, A221, and A222 overlap with multiple main wirings 231A. Also, when viewed from the Z direction, regions A211, A212, A221, and A222 are located between the first and second sub-wirings. Note that the arrangement of regions A211, A212, A221, and A222 is not limited to the example shown in Figure 18.

[0125] Here, as shown in Figure 18, the U and V directions are defined as follows: The U direction is the direction of rotation from the X direction toward the -Y direction. The V direction is the direction of rotation from the Y direction toward the X direction. In this embodiment, the U direction is specifically defined as the direction of rotation by α from the X direction toward the -Y direction, and the V direction is defined as the direction of rotation by α from the Y direction toward the X direction. Note that α is an angle greater than 0° and less than 90°. In one example, α is 45°. Furthermore, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0126] The multiple main wires 231A are for generating a first magnetic field. In the example shown in Figure 18, each of the multiple main wires 231A extends in a direction parallel to the U direction. The first end is located at the end of the multiple main wires 231A in the U direction. The second end is located at the end of the multiple main wires 231A in the -U direction. When current flows through the first conductor layer 230A from the first end to the second end, the direction of the current flowing through each of the multiple main wires 231A becomes the -U direction, and a first magnetic field is generated that includes a magnetic field component in the V direction as the first magnetic field component.

[0127] Next, the configuration of the second conductor layer 230B will be described. The second conductor layer 230B is configured to generate a second magnetic field, which includes a second magnetic field component that is applied to the other parts of the first and second detection circuits 210 and 220, respectively.

[0128] The second conductor layer 230B has the same structure as the second conductor layer 30B in the first embodiment. That is, the second conductor layer 230B includes a first end, a second end, a plurality of main wirings 231B provided between the first end and the second end and separated from each other, a first sub-wiring that electrically connects the first end and the plurality of main wirings 231B, and a second sub-wiring that electrically connects the second end and the plurality of main wirings 231B. The first end and the second end are connected to the processor 4 (see Figure 3), respectively.

[0129] The second conductor layer 230B is positioned so as to overlap with parts of the first and second detection circuits 210 and 220 when viewed from the Z direction. The arrangement of the second conductor layer 230B will be described below with reference to Figure 19. Figure 19 is a plan view showing a part of the second conductor layer 230B.

[0130] In Figure 19, the rectangular area denoted by the symbol A213 indicates the area where multiple MR elements 50A constituting the resistor R13 of the first detection circuit 210 are arranged. The rectangular area denoted by the symbol A214 indicates the area where multiple MR elements 50A constituting the resistor R14 of the first detection circuit 210 are arranged. The rectangular area denoted by the symbol A223 indicates the area where multiple MR elements 50B constituting the resistor R23 of the second detection circuit 220 are arranged. The rectangular area denoted by the symbol A224 indicates the area where multiple MR elements 50B constituting the resistor R24 ​​of the second detection circuit 220 are arranged.

[0131] As shown in Figure 19, region A223 is located ahead of region A213 in the X direction. Regions A214 and A224 are located ahead of regions A213 and A223 in the -Y direction, respectively. When viewed from the Z direction, regions A213, A214, A223, and A224 overlap with multiple main wirings 231B. Also, when viewed from the Z direction, regions A213, A214, A223, and A224 are located between the first and second sub-wirings. Note that the arrangement of regions A213, A214, A223, and A224 is not limited to the example shown in Figure 19.

[0132] The multiple main wires 231B are for generating a second magnetic field. In the example shown in Figure 19, each of the multiple main wires 231B extends in a direction parallel to the U direction. The first end is located at the end of the multiple main wires 231B in the -U direction. The second end is located at the end of the multiple main wires 231B in the U direction. When current is passed through the second conductor layer 230B from the first end to the second end, the direction of the current flowing through each of the multiple main wires 231B becomes the U direction, and a second magnetic field is generated that includes a magnetic field component in the -V direction as a second magnetic field component.

[0133] Next, the operation and effects of the magnetic sensor device 1 in this embodiment will be described. Each free layer 54 of the multiple MR elements 50A constituting the resistive sections R11 to R14 of the first detection circuit 210 has shape anisotropy such that the easy magnetization axis direction is parallel to the Y direction. The direction of magnetization of the free layer 54 in each of the resistive sections R11 and R12 is the Y direction when no target magnetic field (external magnetic field) is applied to the first detection circuit 210. However, due to noise magnetic fields such as disturbance magnetic fields, the direction of magnetization of the free layer 54 in each of the resistive sections R11 and R12 may become the -Y direction. In this case, if a first magnetic field is generated by the first conductive layer 230A of the magnetic field generator 3 and a magnetic field component in the V direction is temporarily applied to each of the resistive sections R11 and R12, the direction of magnetization of the free layer 54 will also become the V direction. After that, when the generation of the first magnetic field is stopped, the direction of magnetization of the free layer 54 in each of the resistive sections R11 and R12 becomes the Y direction.

[0134] Similarly, the direction of magnetization of the free layer 54 in each of the resistive sections R13 and R14 is in the -Y direction when no target magnetic field (disturbing magnetic field) is applied to the first detection circuit 210. However, due to an external magnetic field, the direction of magnetization of the free layer 54 in each of the resistive sections R13 and R14 may become the Y direction. In this case, if a second magnetic field is generated by the second conductive layer 230B of the magnetic field generator 3 and a magnetic field component in the -V direction is temporarily applied to each of the resistive sections R13 and R14, the direction of magnetization of the free layer 54 will also become the -V direction. After that, when the generation of the second magnetic field is stopped, the direction of magnetization of the free layer 54 in each of the resistive sections R13 and R14 will become the -Y direction.

[0135] Thus, the magnetic field generator 3 in this embodiment is used to align the direction of magnetization of the free layer 54 in each of the resistive sections R11 to R14 to a predetermined direction (Y direction or -Y direction), that is, to set or reset the direction of magnetization of the free layer 54.

[0136] The above description of the resistors R11 to R14 of the first detection circuit 210 also applies to the resistors R21 to R24 of the second detection circuit 220. In this embodiment, the magnetic field generator 3 is used to align the magnetization direction of the free layer 54 in each of the resistors R21 and R22 to the X direction, and to align the magnetization direction of the free layer 54 in each of the resistors R23 and R24 to the -X direction.

[0137] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0138] [Fourth Embodiment] Next, a fourth embodiment of the present invention will be described. First, the differences between the configuration of the magnetic sensor device 1 according to this embodiment and the third embodiment will be briefly explained. In this embodiment, the magnetic sensor 202 and the magnetic field generator 3 are configured to be integrated into a single electronic component, and the processor 4 is configured to be a separate electronic component from the magnetic sensor 202 and the magnetic field generator 3. Hereinafter, the electronic component including the magnetic sensor 202 and the magnetic field generator 3 will be referred to as the electronic component 205. The electronic component 205 has the form of a rectangular parallelepiped chip, similar to the first electronic component 5 or the second electronic component 6 in the first embodiment.

[0139] Next, the structure of the electronic component 205 will be described with reference to Figure 20. Figure 20 is a cross-sectional view showing the electronic component 205.

[0140] The magnetic field generator 3 includes two first conductive layers 330A1 and 330A2, each made of a conductive material, instead of the first conductive layer 230A in the third embodiment. The shape of each of the first conductive layers 330A1 and 330A2 is the same as that of the first conductive layer 230A. The first conductive layers 330A1 and 330A2 are configured to generate a first magnetic field that includes a first magnetic field component applied to parts of the first and second detection circuits 210 and 220 of the magnetic sensor 202, respectively. The first conductive layers 330A1 and 330A2 are connected in series or in parallel.

[0141] Furthermore, the magnetic field generator 3 includes two second conductive layers 330B1 and 330B2, each made of a conductive material, instead of the second conductive layer 230B in the third embodiment. The shape of each of the second conductive layers 330B1 and 330B2 is similar to that of the second conductive layer 230B. The second conductive layers 330B1 and 330B2 are configured to generate a second magnetic field that includes a second magnetic field component applied to the other parts of the first and second detection circuits 210 and 220 of the magnetic sensor 202, respectively. The second conductive layers 330B1 and 330B2 are connected in series or in parallel.

[0142] The electronic component 205 includes a substrate 341 and insulating layers 342, 343, 344, 345, 346, 347, 348, 349, and 350. Insulating layer 342 is located on the substrate 341. A first conductor layer 330A1 and a second conductor layer 330B1 are located on the insulating layer 342. Insulating layer 343 is located on the insulating layer 342 around the first conductor layer 330A1 and around the second conductor layer 330B1. Insulating layer 344 is located on the first conductor layer 330A1, the second conductor layer 330B1, and insulating layer 343.

[0143] As described in the third embodiment, the first detection circuit 210 of the magnetic sensor 202 includes a plurality of MR elements 50A, a plurality of lower electrodes 61A, and a plurality of upper electrodes 62A. The second detection circuit 220 of the magnetic sensor 202 includes a plurality of MR elements 50B, a plurality of lower electrodes 61B, and a plurality of upper electrodes 62B. The plurality of lower electrodes 61A and the plurality of lower electrodes 61B are arranged on an insulating layer 344. An insulating layer 345 is arranged on the insulating layer 344 around the plurality of lower electrodes 61A and the plurality of lower electrodes 61B. The plurality of MR elements 50A are arranged on the plurality of lower electrodes 61A. The plurality of MR elements 50B are arranged on the plurality of lower electrodes 61B. An insulating layer 346 is arranged on the plurality of lower electrodes 61A, the plurality of lower electrodes 61B, and the insulating layer 345 around the plurality of MR elements 50A and the plurality of MR elements 50B.

[0144] Multiple upper electrodes 62A are arranged on multiple MR elements 50A and insulating layer 346. Multiple upper electrodes 62B are arranged on multiple MR elements 50B and insulating layer 346. Insulating layer 347 is arranged on insulating layer 346 around the multiple upper electrodes 62A and around the multiple upper electrodes 62B.

[0145] The insulating layer 348 is located on a plurality of upper electrodes 62A, a plurality of upper electrodes 62B, and the insulating layer 347. The first conductor layer 330A2 and the second conductor layer 330B2 are located on the insulating layer 348. The insulating layer 349 is located on the insulating layer 348, around the first conductor layer 330A2 and around the second conductor layer 330B2. The insulating layer 350 is located on the first conductor layer 330A2, the second conductor layer 330B2, and the insulating layer 349.

[0146] In this embodiment, the multiple MR elements 50A of the resistors R11 and R12 of the first detection circuit 210 and the multiple MR elements 50B of the resistors R21 and R22 of the second detection circuit 220 are arranged between the first conductor layer 330A1 and the first conductor layer 330A2. The magnetic field generator 3 may include only one of the conductor layers, the first conductor layer 330A1 and the first conductor layer 330A2.

[0147] Furthermore, in this embodiment, the multiple MR elements 50A of the resistors R13 and R14 of the first detection circuit 210 and the multiple MR elements 50B of the resistors R23 and R24 of the second detection circuit 220 are arranged between the second conductor layer 330B1 and the second conductor layer 330B2. Note that the magnetic field generator 3 may include only one of the second conductor layers 330B1 and 330B2.

[0148] Other configurations, operations, and effects in this embodiment are the same as those in the third embodiment.

[0149] [Fifth Embodiment] Next, a fifth embodiment of the present invention will be described. First, with reference to Figure 21, the configuration of a current sensor system including a magnetic sensor device according to this embodiment will be described. The magnetic sensor device 401 according to this embodiment is used as a current sensor device to detect the value of a target current flowing through a conductor. Figure 21 shows an example in which the conductor through which the target current flows is a bus bar 405. The magnetic sensor device 401 is placed near the bus bar 405. Hereinafter, the target current will be referred to as the target current Itg. A magnetic field 406 is generated around the bus bar 405 by the target current Itg. The magnetic sensor device 401 is placed at a position to which the magnetic field 406 is applied.

[0150] Next, the configuration of the magnetic sensor device 401 according to this embodiment will be described with reference to Figure 22. Figure 22 is a cross-sectional view showing the magnetic sensor device 401. The magnetic sensor device 401 is a magnetic balance type current sensor device. As shown in Figure 22, the magnetic sensor device 401 comprises a magnetic sensor 402 and a magnetic field generator 403. The magnetic sensor 402 and the magnetic field generator 403 are integrated by a plurality of insulating layers, which will be described later. The magnetic sensor device 401 is independent of the busbar 405 (see Figure 21).

[0151] Here, as shown in Figures 21 and 22, the X, Y, and Z directions in this embodiment are defined. The X, Y, and Z directions are orthogonal to each other. In this embodiment, the direction in which the target current Itg shown in Figure 21 flows is defined as the Y direction.

[0152] Here, the magnetic field 406 generated by the target current Itg that can be detected by the magnetic sensor 402 is called the first magnetic field H1. The magnetic field generator 403 is for generating a second magnetic field H2 that cancels out the first magnetic field H1. The magnetic sensor 402 is configured to detect the combined magnetic field of the first magnetic field H1 and the second magnetic field H2 as the target magnetic field, which is the magnetic field to be detected (the magnetic field to be detected). The magnetic sensor 402 is also configured to generate a magnetic field detection value S according to the strength of the target magnetic field. The first magnetic field H1 and the second magnetic field H2 are shown in Figure 23, which will be explained later.

[0153] In this embodiment, the direction of the first magnetic field H1, the direction of the second magnetic field H2, and the direction of the target magnetic field are parallel to the X direction. The configuration of the magnetic sensor 402 will be described in detail later.

[0154] The magnetic field generator 403 includes a first conductive layer 430L and a second conductive layer 430U, both made of a conductive material. The first and second conductive layers 430L and 430U are configured to generate a second magnetic field H2. As shown in Figure 22, when viewed from the Z direction, the first and second conductive layers 430L and 430U are arranged to overlap with the magnetic sensor 402. The first and second conductive layers 430L and 430U are connected in series or in parallel.

[0155] Each of the first and second conductor layers 430L and 430U has a structure similar to that of the first conductor layer 30A. That is, the first conductor layer 430L includes a first end, a second end, a plurality of main wirings 431L provided between the first and second ends and separated from each other, a first sub-wiring that electrically connects the first end and the plurality of main wirings 431L, and a second sub-wiring 433L that electrically connects the second end and the plurality of main wirings 431L. The second conductor layer 430U includes a first end, a second end, a plurality of main wirings 431U provided between the first and second ends and separated from each other, a first sub-wiring 432U that electrically connects the first end and the plurality of main wirings 431U, and a second sub-wiring that electrically connects the second end and the plurality of main wirings 431U. Figure 22 shows the shapes of multiple main wirings 431L and multiple main wirings 431U as the shapes of the first and second conductor layers 430L and 430U. The main wirings 431L, 431U, the first auxiliary wiring 432U, and the second auxiliary wiring 433L are shown in Figure 23, which will be explained later.

[0156] As shown in Figure 22, the magnetic sensor device 401 further comprises a substrate 441 and insulating layers 442, 443, 444, 445, and 446. Insulating layer 442 is located on the substrate 441. The first conductor layer 430L is located on the insulating layer 442. Insulating layer 443 is located on the insulating layer 442 and around the first conductor layer 430L. Insulating layer 444 is located on the first conductor layer 430L and insulating layer 443.

[0157] The magnetic sensor 402 is placed on top of the insulating layer 444. The insulating layer 445 is placed over the magnetic sensor 402 and the insulating layer 444. The second conductor layer 430U is placed on top of the insulating layer 445. The insulating layer 446 is placed over the second conductor layer 430U and the insulating layer 445.

[0158] Next, the circuit connected to the magnetic sensor device 401 will be described with reference to Figure 23. The magnetic sensor device 401 and the circuit connected to it constitute the current sensor system 400. Figure 23 is a block diagram showing the configuration of the current sensor system 400. As shown in Figure 23, the current sensor system 400 comprises the magnetic sensor device 401, a feedback circuit 470, and a current detector 480. The feedback circuit 470 controls the feedback current to generate a second magnetic field H2 according to the magnetic field detection value S and sends it to the magnetic field generator 403. The current detector 480 generates a detection value of the feedback current flowing to the magnetic field generator 403. The current detector 480 is, for example, a resistor inserted in the current path of the feedback current. The potential difference across this resistor corresponds to the detection value of the feedback current. Hereinafter, the detection value of the feedback current generated by the current detector 480 will be called the current detection value. The current detection value is proportional to the value of the target current Itg. Therefore, the current detection value corresponds to the detection value of the target current Itg.

[0159] The feedback circuit 470 includes a control circuit 471. The control circuit 471 generates a controlled feedback current according to the detected magnetic field value S and supplies it to the magnetic field generator 403.

[0160] Next, the configuration of the magnetic sensor 402 will be described in detail. The magnetic sensor 402 includes a plurality of magnetic detection elements. The magnetic detection elements may be, for example, MR elements or Hall elements. The MR elements may be spin-valve type MR elements or AMR (anisotropic magnetoresistance) elements. In this embodiment in particular, the magnetic sensor 402 includes a plurality of spin-valve type MR elements 50 as a plurality of magnetic detection elements. The configuration of each of the plurality of MR elements 50 is the same as in the first embodiment. Each of the plurality of MR elements 50 includes a magnetization fixed layer 52, a gap layer 53, and a free layer 54 as described in the first embodiment. Each of the plurality of MR elements 50 may further include an antiferromagnetic layer 51 as described in the first embodiment.

[0161] Figure 24 is a circuit diagram showing the circuit configuration of the magnetic sensor 402. The magnetic sensor 402 includes four resistors R411, R412, R413, and R414, a power port V41, a ground port G41, two output ports E41 and E42, and a difference detector 410. Resistor R411 is located between the power port V41 and the output port E41. Resistor R412 is located between the output port E41 and the ground port G41. Resistor R413 is located between the output port E42 and the ground port G41. Resistor R414 is located between the power port V41 and the output port E42. A predetermined voltage or current is applied to the power port V41. The ground port G41 is connected to ground.

[0162] Each of the resistive sections R211 to R214 contains at least one MR element 50. In Figure 24, the filled arrows represent the direction of magnetization of the magnetization fixed layer 52 in each of the resistive sections R411 to R414. In the example shown in Figure 24, the direction of magnetization of the magnetization fixed layer 52 is set in each of the resistive sections R411 to R414 such that the direction of magnetization of the magnetic sensor 402 is parallel to the X direction. The direction of magnetization of the magnetization fixed layer 52 in each of the resistive sections R411 and R413 is the X direction. The direction of magnetization of the magnetization fixed layer 52 in each of the resistive sections R412 and R414 is the -X direction. The free layer 54 in each of the resistive sections R411 to R414 has shape anisotropy such that the easy magnetization axis direction is parallel to the Y direction.

[0163] The magnetic sensor 402 is subjected to a magnetic field 406 generated by the target current Itg and a magnetic field generated by the magnetic field generator 403. The magnetic sensor 402 is positioned such that the directions of the two applied magnetic fields are opposite or nearly opposite to each other, and its magnetic sensing direction is positioned so that it is parallel or nearly parallel to the directions of the two applied magnetic fields.

[0164] In this example, the component of the magnetic field generated by the target current Itg and applied to the magnetic sensor 402 in the direction of magnetization is the first magnetic field H1. The component of the magnetic field generated by the magnetic field generator 403 and applied to the magnetic sensor 402 in the direction of magnetization is the second magnetic field H2.

[0165] In the magnetic sensor 402, the potential difference between output ports E41 and E42 changes according to the strength of the target magnetic field. The difference detector 410 outputs a signal corresponding to the potential difference between output ports E41 and E42 as the magnetic field detection value S. Depending on the relative magnitudes of the first magnetic field H1 and the second magnetic field H2, the strength of the target magnetic field, the potential difference between output ports E41 and E42, and the magnetic field detection value S can be positive or negative.

[0166] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0167] [Sixth Embodiment] Next, a sixth embodiment of the present invention will be described. In this embodiment, the magnetic field generator is configured to generate a magnetic field for testing a magnetic sensor. The magnetic sensor to be tested may be the magnetic sensor 2 in the first embodiment, the magnetic sensor 202 in the third embodiment, or the magnetic sensor 402 in the fifth embodiment.

[0168] The configuration of the magnetic field generator in this embodiment may be the same as the configuration of the magnetic field generator 3 in the first embodiment, or the same as the configuration of the magnetic field generator 3 in the third embodiment. The magnetic field generator is configured to generate a magnetic field (target magnetic field) that is the target of detection by the magnetic sensor, as a magnetic field for testing.

[0169] In this embodiment, the magnetic field generator is separate from the magnetic sensor and is positioned and positioned so as to be able to apply a magnetic field for inspection to the magnetic sensor. If the magnetic sensor to be inspected is the magnetic sensor 2 in the first embodiment, in addition to the magnetic field generator in this embodiment, the magnetic field generator 3 in the first embodiment may also be provided. If the magnetic sensor to be inspected is the magnetic sensor 2 in the third embodiment, in addition to the magnetic field generator in this embodiment, the magnetic field generator 3 in the third embodiment may also be provided.

[0170] Other configurations, operations, and effects in this embodiment are the same as those in the first, third, or fifth embodiment.

[0171] It should be noted that the present invention is not limited to the embodiments described above, and various modifications are possible. For example, the magnetic sensor device of the present invention may be configured such that the magnetic sensor, magnetic field generator, and processor are each separate electronic components.

[0172] Furthermore, the magnetic sensor device 1 according to the first embodiment may be configured such that the first magnetic field component of the first magnetic field is applied to both the first detection circuit 10 and the second detection circuit 20, and the second magnetic field component of the second magnetic field is applied to both the first detection circuit 10 and the second detection circuit 20.

[0173] Furthermore, the magnetic sensor device 1 according to the third embodiment may constitute part of a position detection device that detects the position of an object moving in a predetermined direction. In this case, the magnetic sensor device 1 may be configured to detect a magnetic field generated by a magnet configured to change its relative position together with the object.

[0174] As described above, the magnetic sensor device of the present invention comprises a magnetic sensor and a magnetic field generator configured to generate a magnetic field applied to the magnetic sensor. The magnetic field generator includes a conductor layer made of a conductive material. The conductor layer includes a first end, a second end, a plurality of main wirings for generating a magnetic field, which are provided between the first end and the second end and are separated from each other, a first sub-wiring that electrically connects the first end and the plurality of main wirings, and a second sub-wiring that electrically connects the second end and the plurality of main wirings.

[0175] The first sub-wiring includes a plurality of first paths leading from the first end to each of the plurality of main wirings. The second sub-wiring includes a plurality of second paths leading from the second end to each of the plurality of main wirings. Each of the plurality of first paths passes through a plurality of first junctions to which the first sub-wiring branches. Each of the plurality of second paths passes through a plurality of second junctions to which the second sub-wiring branches. The number of plurality of first junctions is the same for any two first paths among the plurality of first paths. The number of plurality of second junctions is the same for any two second paths among the plurality of second paths.

[0176] In the magnetic sensor device of the present invention, the number of first connecting parts that each of the multiple first paths passes through may be the same. Also, the number of second connecting parts that each of the multiple second paths passes through may be the same.

[0177] Furthermore, in the magnetic sensor device of the present invention, each of the first and second sub-wirings may be configured by electrically connecting multiple unbranched wiring portions. Each of the multiple first connecting portions and the multiple second connecting portions may include at least one specific connecting portion in which three of the multiple wiring portions are electrically connected. Both the multiple first connecting portions and the multiple second connecting portions may be specific connecting portions.

[0178] Furthermore, in the magnetic sensor device of the present invention, the number of main wirings is n, and the sum of the number of first connection parts and the number of second connection parts may be 2(n-1).

[0179] Furthermore, the magnetic sensor device of the present invention may further include a first electronic component including a magnetic sensor and a second electronic component including a magnetic field generator. Alternatively, the magnetic sensor device of the present invention may further include an electronic component including a magnetic sensor and a magnetic field generator.

[0180] Furthermore, in the magnetic sensor device of the present invention, the magnetic sensor and the magnetic field generator may be stacked in the first direction. The magnetic sensor may include a plurality of magnetic detection elements. The plurality of magnetic detection elements may be arranged between the first subwiring and the second subwiring in a second direction perpendicular to the first direction when viewed from the first direction.

[0181] Furthermore, in the magnetic sensor device of the present invention, each of the multiple main wirings may have a shape that is elongated in one direction and may have one end closest to the first end and the other end closest to the second end. The potential difference between each of the multiple main wirings may be the same.

[0182] Furthermore, in the magnetic sensor device of the present invention, the conductor layer may include a plurality of paths, each having the same length, that extend from the first end to the second end via a first sub-wiring, a plurality of main wirings, and a second sub-wiring.

[0183] Furthermore, in the magnetic sensor device of the present invention, the conductive layer may include multiple paths from the first end to the second end, via a first sub-wiring, a plurality of main wirings, and a second sub-wiring, each of which has the same resistance value.

[0184] Furthermore, in the magnetic sensor device of the present invention, the conductive layer may have a symmetrical shape with respect to a virtual plane that intersects the first and second ends.

[0185] Furthermore, in the magnetic sensor device of the present invention, the plurality of main wirings may include a first main wiring and second and third main wirings adjacent to both sides of the first main wiring. The spacing between the first main wiring and the second main wiring and the spacing between the first main wiring and the third main wiring may be the same.

[0186] Furthermore, in the magnetic sensor device of the present invention, the magnetic field may be used to measure the sensitivity of the magnetic sensor. Alternatively, in the magnetic sensor device of the present invention, the magnetic sensor may include a magnetoresistive element. The magnetoresistive element may include a magnetic layer having a magnetization whose direction can be changed. The magnetic field may be used to set or reset the direction of the magnetization of the magnetic layer.

[0187] The magnetic field generator of the present invention is configured to generate a magnetic field for inspection that is applied to a magnetic sensor. The magnetic field generator includes a conductive layer made of a conductive material. The conductive layer includes a first end, a second end, a plurality of main wirings for generating a magnetic field, the plurality of main wirings provided between the first end and the second end and separated from each other, a first sub-wiring that electrically connects the first end and the plurality of main wirings, and a second sub-wiring that electrically connects the second end and the plurality of main wirings.

[0188] The first sub-wiring includes a plurality of first paths leading from the first end to each of the plurality of main wirings. The second sub-wiring includes a plurality of second paths leading from the second end to each of the plurality of main wirings. Each of the plurality of first paths passes through a plurality of first junctions to which the first sub-wiring branches. Each of the plurality of second paths passes through a plurality of second junctions to which the second sub-wiring branches. The number of plurality of first junctions is the same for any two first paths among the plurality of first paths. The number of plurality of second junctions is the same for any two second paths among the plurality of second paths. [Explanation of Symbols]

[0189] 1…Magnetic sensor device, 2…Magnetic sensor, 3…Magnetic field generator, 4…Processor, 5…First electronic component, 6…Second electronic component, 10…First detection circuit, 20…Second detection circuit, 30…Conducting layer, 30A…First conductor layer, 30B…Second conductor layer, 31,31A,31B…Main wiring, 32,32A,32B…First sub-wiring, 33,33A,33B…Second sub-wiring, 41…Substrate, 42~46…Insulating layer, 50,50A,50B…MR element, 51…Antiferromagnetic layer, 52…Magnetization fixed layer, 53…Gap layer, 54…Free layer, 61,61 A, 61B... Lower electrode, 62, 62A, 62B... Upper electrode, 100... Magnetic sensor system, 101... Magnetic field generator, 311~318... Main wiring, 3200~3214... Wiring section, 3221~3227... First connection section, 3300~3314... Wiring section, 3321~3327... Second connection section, A10, A20... Region, C... Rotation axis, E11, E12, E21, E22... Output port, G1, G2... Ground port, MF... Target magnetic field, PR... Reference position, R11~R14, R21~R24... Resistor section, V1, V2... Power port.

Claims

1. Magnetic sensor and, A magnetic sensor device comprising a magnetic field generator configured to generate a magnetic field applied to the magnetic sensor, The magnetic field generator includes a conductive layer made of a conductive material, The aforementioned conductor layer is The first end and, The second end and, A plurality of main wirings for generating the magnetic field, comprising a plurality of main wirings provided between the first end and the second end and separated from each other, The first end electrically connects the plurality of main wirings, and includes a plurality of first connecting parts, and a first sub-wiring that branches off between the first end and the plurality of main wirings at the plurality of first connecting parts, The second end electrically connects the plurality of main wirings, and includes a plurality of second connecting parts and a second sub-wiring that branches off between the second end and the plurality of main wirings at the plurality of second connecting parts, The first sub-wiring further includes a plurality of first paths, The aforementioned second sub-wiring further includes a plurality of second paths, Each of the plurality of first paths reaches one of the plurality of main wirings via two or more first connecting parts from the first end, Each of the plurality of second paths reaches one of the plurality of main wirings via two or more second connecting parts from the second end, The number of the plurality of first connecting parts that each of any two first paths among the plurality of first paths passes through is the same. A magnetic sensor device characterized in that the number of the plurality of second connecting portions that each of any two second paths among the plurality of second paths passes through is the same.

2. The number of the multiple first connecting parts that each of the multiple first paths passes through is the same. The magnetic sensor device according to claim 1, characterized in that the number of the plurality of second connecting portions through which each of the plurality of second paths passes is the same.

3. Each of the first and second sub-wirings is configured by electrically connecting multiple non-branching wiring sections. The magnetic sensor device according to claim 1, characterized in that each of the plurality of first connecting portions and the plurality of second connecting portions includes at least one specific connecting portion to which three of the plurality of wiring portions are electrically connected.

4. The magnetic sensor device according to claim 3, characterized in that the plurality of first connecting parts and the plurality of second connecting parts are all the specific connecting parts.

5. The magnetic sensor device according to claim 1, characterized in that the number of the plurality of main wirings is n, and the sum of the number of the plurality of first connection parts and the number of the plurality of second connection parts is 2(n-1).

6. Furthermore, the first electronic component including the magnetic sensor, The magnetic sensor device according to claim 1, further comprising a second electronic component including the magnetic field generator.

7. Furthermore, the magnetic sensor device according to claim 1 is characterized by comprising an electronic component including the magnetic sensor and the magnetic field generator.

8. The magnetic sensor and the magnetic field generator are stacked in the first direction, The magnetic sensor includes a plurality of magnetic detection elements, The magnetic sensor device according to claim 1, characterized in that the plurality of magnetic detection elements are arranged between the first sub-wiring and the second sub-wiring in a second direction perpendicular to the first direction when viewed from the first direction.

9. Each of the aforementioned multiple main wirings has a shape that is elongated in one direction and has one end closest to the first end and the other end closest to the second end. The magnetic sensor device according to claim 1, characterized in that the potential difference between one end and the other end of each of the plurality of main wirings is the same.

10. The magnetic sensor device according to claim 1, characterized in that the conductor layer includes a plurality of paths, each having the same length, that extend from the first end to the second end via the first sub-wiring, the plurality of main wirings, and the second sub-wiring.

11. The magnetic sensor device according to claim 1, characterized in that the conductor layer includes a plurality of paths from the first end to the second end, via the first sub-wiring, the plurality of main wirings and the second sub-wiring, each path having the same resistance value.

12. The magnetic sensor device according to claim 1, characterized in that the conductive layer has a symmetrical shape with respect to a virtual plane intersecting the first and second ends.

13. The plurality of main wirings include a first main wiring and second and third main wirings adjacent to both sides of the first main wiring, The magnetic sensor device according to claim 1, characterized in that the distance between the first main wiring and the second main wiring and the distance between the first main wiring and the third main wiring are the same.

14. The magnetic sensor device according to any one of claims 1 to 13, characterized in that the magnetic field is used to measure the sensitivity of the magnetic sensor.

15. The magnetic sensor includes a magnetoresistive element, The magnetoresistive element includes a magnetic layer having magnetization that can change direction, The magnetic sensor device according to any one of claims 1 to 13, characterized in that the magnetic field is used to set or reset the direction of magnetization of the magnetic layer.

16. A magnetic field generator configured to generate a magnetic field for inspection that is applied to a magnetic sensor, The magnetic field generator includes a conductive layer made of a conductive material, The aforementioned conductor layer is The first end and, The second end and, A plurality of main wirings for generating the magnetic field, comprising a plurality of main wirings provided between the first end and the second end and separated from each other, The first end electrically connects the plurality of main wirings, and includes a plurality of first connecting parts, and a first sub-wiring that branches off between the first end and the plurality of main wirings at the plurality of first connecting parts, The second end electrically connects the plurality of main wirings, and includes a plurality of second connecting parts and a second sub-wiring that branches off between the second end and the plurality of main wirings at the plurality of second connecting parts, The first sub-wiring further includes a plurality of first paths, The aforementioned second sub-wiring further includes a plurality of second paths, Each of the plurality of first paths reaches one of the plurality of main wirings via two or more first connecting parts from the first end, Each of the plurality of second paths reaches one of the plurality of main wirings via two or more second connecting parts from the second end, The number of the plurality of first connecting parts that each of any two first paths among the plurality of first paths passes through is the same. A magnetic field generator characterized in that the number of the plurality of second connecting parts that each of any two second paths among the plurality of second paths passes through is the same.

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