electronic machines

Abstract

Provided is a lightweight, foldable electronic apparatus comprising an input function. This electronic apparatus is provided with a foldable display device. The display device is provided with an input function, an authentication function, etc., and enables the operation of the electronic apparatus in a contacting or non-contacting manner. The display device has a light-emitting device and a light-receiving device in a display part. The light-emitting device has a display function. The light-emitting device may also include a light-emitting function for assisting an input operation. The light-receiving device has an imaging function and a function which serves as a sensor for performing the input operation.

Description

[Technical Field]

[0001] One aspect of the present invention relates to electronic equipment.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), methods for driving them, methods for using them, or methods for manufacturing them.

[0003] In this specification, the term "semiconductor device" refers to any device that can function by utilizing semiconductor properties. Transistors and semiconductor circuits are examples of semiconductor devices. Furthermore, memory devices, display devices, imaging devices, and electronic devices may contain semiconductor devices. [Background technology]

[0004] In recent years, display devices have been applied to a wide variety of uses. For example, large-scale display devices are used in home television systems, digital signage, and PID (Public Information Display) systems. Small and medium-sized display devices are used in mobile information terminals such as smartphones and tablet devices.

[0005] As a display device, for example, a light-emitting device having a light-emitting element has been developed. Light-emitting devices that utilize the electroluminescence (hereinafter referred to as EL) phenomenon have features such as being thin and lightweight, having a fast response, and being able to be driven at low voltage. For example, Patent Document 1 discloses a flexible light-emitting device. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2014-197522 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] Electronic devices such as mobile phones, smartphones, tablet computers, and laptop computers are made to be the appropriate size according to their function and ease of use. Furthermore, to improve portability, it is desirable to make them lighter. It is also preferable that they can be folded or otherwise transformed into a smaller size.

[0008] Furthermore, since electronic devices equipped with display devices are used for a variety of purposes, there is a desire for them to be highly functional. For example, by incorporating user interface functions, imaging functions, and authentication functions, it is possible to create more convenient electronic devices. As for user interfaces, input functions such as touch panels are frequently used.

[0009] Therefore, one aspect of the present invention aims to provide a lightweight, foldable electronic device. Alternatively, it aims to provide an electronic device equipped with an input function on its display unit. Alternatively, it aims to provide an electronic device equipped with an authentication function. Alternatively, it aims to provide a novel electronic device. Alternatively, it aims to provide an authentication method using the above-mentioned electronic device. Alternatively, it aims to provide a novel semiconductor device, etc.

[0010] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0011] One aspect of the present invention is an electronic device having a display device with an input function.

[0012] One aspect of the present invention is an electronic device having a display unit provided with a light-emitting device and a light-receiving device, wherein the light-emitting device and the light-receiving device are arranged in close proximity, and the display unit displays keyboard keys using a plurality of light-emitting devices, a first string of characters is input by a first touch operation of the keyboard keys with a finger, and a plurality of light-receiving devices provided near the plurality of light-emitting devices that display the keyboard keys used when inputting the first string of characters capture the fingerprint of the finger used in the first touch operation, and authentication is performed by comparing the information of the first string of characters and the information of the fingerprint of the finger used in the first touch operation with registered information.

[0013] The first touch operation is preferably performed using multiple light-receiving devices or capacitive sensors as input devices.

[0014] Furthermore, after authentication, when a second string of characters is entered through a second touch operation with a finger on a keyboard key, multiple light-receiving devices located near multiple light-emitting devices that display the keyboard key used to enter the second string of characters can capture the fingerprint of the finger used in the second touch operation. Authentication can then be performed by comparing the fingerprint information of the finger used in the second touch operation with registered information.

[0015] The display unit has a flexible display device, which is incorporated into a first housing and a second housing, and can display keyboard keys when the first housing and the second housing are at a certain angle. The electronic device also has a hinge jig, which has a first shaft hole, a second shaft hole, and a locking component, the locking component having a spring and a ball, the first housing has a first shaft rod, the second housing has a second shaft rod, multiple recesses are provided near the first shaft rod and the second shaft rod, the first shaft rod is inserted into the first shaft hole and the second shaft rod is inserted into the second shaft hole, and the angle can be fixed by the ball entering one of the multiple recesses.

[0016] Another aspect of the present invention is an authentication method for an electronic device that performs touch operations and fingerprint imaging on a display unit. The method includes displaying keyboard keys on the display unit, performing a first touch operation with a finger on the keyboard keys to input a first string, imaging the fingerprint of the finger corresponding to the input of the first string during the first touch operation, and in addition to checking whether the first string matches the registered information, checking whether the fingerprint information of the finger corresponding to the input of the first string matches the registered information.

[0017] After the first string and the fingerprint information of the finger corresponding to the input of the first string match the registered information, a second touch operation is performed with a finger on the keyboard keys to input a second string, and the fingerprint of the finger corresponding to the input of the second string is imaged during the second touch operation. In addition to checking whether the second string matches the registered information, it is also checked whether the fingerprint information of the finger corresponding to the input of the second string matches the registered information, and authentication may be performed when the second string and the fingerprint information of the finger corresponding to the input of the second string match the registered information.

[0018] When a third touch operation is performed with a finger on the keyboard keys after authentication, the fingerprint of the finger is imaged, and it is checked whether the fingerprint information of the finger corresponding to the third touch operation matches the registered information. When the fingerprint information of the finger corresponding to the third touch operation does not match the registered information, the authentication can be canceled.

Advantages of the Invention

[0019] According to one aspect of the present invention, a lightweight and foldable electronic device can be provided. Or, an electronic device having an input function on a display unit can be provided. Or, an electronic device having an authentication function can be provided. Or, a novel electronic device can be provided. Or, an authentication method using the above electronic device can be provided. Or, a novel semiconductor device or the like can be provided.

[0020] Note that the description of these effects does not prevent the existence of other effects. One aspect of the present invention does not necessarily have to have all of these effects. It is possible to extract other effects from the description of the specification, drawings, and claims.

Brief Description of the Drawings

[0021] FIG. 1 is a diagram for explaining an electronic device. FIGS. 2A and 2B are diagrams for explaining an electronic device. FIGS. 3A to 3C are diagrams for explaining an electronic device. FIGS. 4A to 4D are diagrams for explaining the configuration of a hinge mechanism. FIGS. 5A to 5D are diagrams for explaining an electronic device. FIGS. 6A and 6B are diagrams for explaining a method for authenticating an electronic device. FIG. 7 is a flowchart for explaining a method for authenticating an electronic device. FIGS. 8A, 8B, and 8D are cross-sectional views showing examples of a display device. FIGS. 8C and 8E are diagrams showing examples of images. FIGS. 8F to 8H are top views showing examples of pixels. FIG. 9A is a cross-sectional view showing a configuration example of a display device. FIGS. 9B to 9D are top views showing examples of pixels. FIG. 10A is a cross-sectional view showing a configuration example of a display device. FIGS. 10B to 10I are top views showing an example of a pixel. FIGS. 11A to 11F are diagrams showing configuration examples of a light-emitting device. FIGS. 12A and 12B are diagrams showing configuration examples of a light-emitting device and a light-receiving device. FIGS. 13A and 13B are diagrams showing configuration examples of a display device. FIGS. 14A to 14D are diagrams showing configuration examples of a display device. FIGS. 15A to 15C are diagrams showing configuration examples of a display device. FIGS. 16A to 16D are diagrams showing configuration examples of a display device. FIGS. 17A to 17F are diagrams showing configuration examples of a display device. FIGS. 18A to 18F are diagrams showing configuration examples of a display device. Figures 19A and 19B show examples of display device configurations. Figure 20 shows an example of a display device configuration. Figure 21A is a cross-sectional view showing an example of a display device. Figure 21B is a cross-sectional view showing an example of a transistor. Figures 22A to 22F show examples of pixels. Figures 22G and 22H show examples of pixel circuit diagrams. [Modes for carrying out the invention]

[0022] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the invention. Therefore, the present invention is not to be interpreted as being limited to the descriptions of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common between different drawings for the same parts or parts having similar functions, and repeated descriptions may be omitted. In addition, hatching of the same elements constituting the figures may be omitted or changed as appropriate between different drawings.

[0023] Furthermore, even if an element is shown as a single element in a circuit diagram, it may be composed of multiple elements as long as there is no functional disadvantage. For example, multiple transistors that act as switches may be connected in series or parallel. Also, a capacitor may be divided and placed in multiple locations.

[0024] Furthermore, a single conductor may have multiple functions, such as wiring, electrodes, and terminals, and in this specification, multiple designations may be used for the same element. Also, even if elements are shown as directly connected in a circuit diagram, they may actually be connected via one or more conductors, and in this specification, such configurations are included in the category of direct connection.

[0025] (Embodiment 1) This embodiment describes an electronic device according to one aspect of the present invention.

[0026] One aspect of the present invention is an electronic device equipped with a foldable display device. The display device is equipped with input functions, authentication functions, etc., and can be operated by contact or non-contact. The display device has a light-emitting device (also called a light-emitting element) in its display section. The display device may also have a light-receiving device (also called a light-receiving element) positioned in close proximity to the light-emitting device.

[0027] The light-emitting device has a display function. It may also have a light-emitting function to assist input operations. The light-receiving device has an imaging function and functions as a sensor for input operations.

[0028] As the light-emitting device, an organic EL element formed with a high aperture ratio in the pixel can be used. Since this organic EL element can be manufactured using a lithography process, the aperture ratio can be increased compared to when it is formed using a metal mask with low alignment accuracy. Therefore, high brightness can be achieved even when the current density of the organic EL element is reduced, thereby improving the reliability of the element. In addition, by providing the organic EL element on a flexible substrate material, the display unit can be folded, making it possible to form a small and lightweight electronic device.

[0029] Figure 1 illustrates an electronic device 30a according to one embodiment of the present invention. In Figure 1, a tablet computer is shown as an example of the electronic device 30a, and the display unit 31 shows an example in which icons 41, a clock 42, and keyboard keys 43 are displayed. The electronic device 30a also includes a housing 32a, a housing 32b, a camera 33, a microphone 34, a push button 35, a speaker 36, and a hinge jig 37, etc. The push button 35 may have functions such as a power switch or volume control.

[0030] The electronic device 30a can have various functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on a display unit, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, etc.

[0031] The electronic device 30a may have a sensor 38 (including the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, capacity, light, liquid, magnetism, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation). The sensor 38 can be used for input operations, measurement operations, operation control of the electronic device, or assistance thereto.

[0032] The electronic device 30a is foldable, and the display unit 31 has a flexible display device. The display device has a light-emitting device such as an organic EL element on a flexible substrate and is incorporated into housings 32a and 32b. In addition to the light-emitting device, the display device is provided with an input device, which can perform input operations by contact or non-contact. As the input device, a light sensor (light-receiving device), a capacitive sensor, or a combination thereof can be used.

[0033] Housings 32a and 32b are connected via a hinge jig 37. Therefore, housings 32a and 32b can be positioned parallel to each other around the hinge jig 37 (see Figure 2A), at an angle greater than 0° and less than 180°, or overlapping (see Figure 2B).

[0034] Figure 1 shows an example of a state where the housings 32a and 32b form an angle greater than 0° and less than 180°, specifically when the angle is slightly greater than 90°. This angle is comfortable to use when housing 32a is placed on a flat surface such as a desk, and the user's head is higher than housing 32b. When using electronic devices at this angle, keyboard input is suitable as the input method due to its compatibility with the body.

[0035] For example, when the angle between housing 32a and housing 32b is 85° to 135°, preferably 90° to 130°, and more preferably 95° to 125°, the keyboard keys 43 are automatically displayed when an input operation is required, allowing the user to quickly perform an input operation with both hands. It is also possible to configure the system so that the keyboard keys 43 are not automatically displayed.

[0036] On the other hand, when using an electronic device at the angle shown in Figure 2A, the casing may be held with one hand, and therefore two-handed keyboard input may not be performed. Thus, the keyboard display should be adjusted to the user's preference. The orientation of the display can be switched to a position that is easily visible to the user by detecting the angle of the casing with the sensor 38 of the electronic device 30a.

[0037] Furthermore, when the electronic device is positioned at the angle shown in Figure 2B, it may have a function to enter a standby state or power-off state, which turns off the display, etc. By folding it as shown in Figure 2B, portability can be improved. In addition, since the display unit 31 can be protected by the housings 32a and 32b, resistance to drops can be improved.

[0038] Although Figures 1, 2A, and 2B illustrate tablet computers, as shown in Figures 3A to 3C, one embodiment of the present invention may be a smartphone. The smartphone-type electronic device 30b differs from the electronic device 30a in that it is small and has telephone functionality, but other functions and types of elements can be the same as those of the electronic device 30a.

[0039] Here, the hinge jig 37 and its surrounding elements will be described. As mentioned above, the angle formed by the housings 32a and 32b can be adjusted, but it is undesirable for this angle to change unintentionally. For example, an unintended change in this angle may interfere with the visibility and input operation of the display unit. There is also a risk of pinching fingers. Therefore, it is preferable that the electronic device is held at this angle when in use.

[0040] Figures 4A and 4B illustrate the hinge fixture 37 and its surrounding elements. The hinge fixture 37 is an element of the mechanism that functions as a hinge, and the mechanism including the hinge fixture 37 and its surrounding elements functions as a hinge. The hinge fixture 37 has two sets of identical components and parts; one set is combined with an element of the housing 32a, and the other set is combined with an element of the housing 32b. The same reference numerals are used for components and parts with the same configuration.

[0041] The hinge jig 37 has a shaft hole 52 and a plurality of holes 54. The holes 54 are provided around the shaft hole 52, and a locking component 53 having a ball at the end of a spring is inserted into the holes 54. Preferably, the holes 54 are provided at equal intervals (equal angles) on a first circumference centered on the shaft hole 52. The hinge jig 37 has two sets of these parts and components.

[0042] Housings 32a and 32b each have a shaft 51 and a plurality of recesses 55. The recesses 55 are provided around the shaft 51. Preferably, the recesses 55 are provided at equal intervals (equal angles) on a second circumference centered on the shaft 51. The radii of curvature of the first circumference and the second circumference are the same.

[0043] The housings 32a and 32b are connected via the hinge jig 37 by inserting the shaft 51 of the housing 32a into one shaft hole 52 of the hinge jig 37, and inserting the shaft 51 of the housing 32b into the other shaft hole 52 of the hinge jig 37. The inner diameter of the shaft hole 52 is larger than the diameter of the shaft 51, allowing rotational movement between the hinge jig 37 and housing 32a, and between the hinge jig 37 and housing 32b. Alternatively, the shaft holes 52 may be provided in housings 32a and 32b, and the two shafts 51 may be provided in the hinge jig 37.

[0044] At this time, as shown in the internal view around the locking component 53 in Figure 4C, the ball 56 enters the recess 55 due to the elasticity of the spring 57, and is temporarily locked. If a bending operation is performed between the housings 32a and 32b with a force greater than a certain amount, the ball 56 comes out of the recess 55 and the lock is released. If the bending operation is performed further, the ball 56 enters another recess 55 and is temporarily locked again.

[0045] Here, as shown in Figure 4D, by providing multiple recesses 55 at equal intervals (equal angles θ) on the second circumference 58, it becomes possible to fix the structure at several angles. For example, if recesses 55 are provided at 30° intervals and rotation occurs using one shaft hole 52 and shaft rod 51 combination, the angles formed by the housing 32a and housing 32b will be 180° (see Figure 5A), 150°, 120° (see Figure 5B), and 90°. Furthermore, if rotation using the other shaft hole 52 and shaft rod 51 combination is also added, the angles can be further set to 60°, 30°, and 0° (see Figure 5C).

[0046] In Figures 4A and 4B, an example is shown in which there are four sets of holes 54 and locking parts 53 near the shaft hole 52. However, there may be only one set, and there may be up to the same number of sets as there are recesses 55. Increasing the number of sets increases the locking strength, but if the number is too large, it becomes difficult to fit them into the hinge jig 37. Also, the locking strength may decrease because it becomes necessary to make the spring 57 thinner and the diameter of the ball 56 smaller. When there are multiple holes 54 and locking parts 53, the holes 54 and recesses 55 are provided in appropriate positions so that multiple locking parts 53 act simultaneously (see Figure 4D).

[0047] Furthermore, in the hinge section, since there are two combinations of shaft hole 52 and shaft rod 51, the number of recesses 55 and locking parts 53 provided near each can be increased, thereby increasing the locking strength. In particular, when electronic devices are made thin, it is necessary to make the locking parts 53 smaller, so this configuration is preferable.

[0048] Furthermore, because there are two shafts 51, a gap is created between the housing 32a and housing 32b when the electronic device is bent, as shown in the side view of Figure 5D. Therefore, even when the electronic device is bent, a constant curvature r can be maintained in the bent portion of the flexible display device, thereby increasing the reliability of the display unit 31. This curvature r can be adjusted by the distance between one shaft hole 52 and the other shaft hole 52 provided in the hinge jig 37.

[0049] Furthermore, when bending electronic devices, it is preferable that the radius of curvature r is small so that the thickness can be reduced. However, reducing the radius of curvature r also requires ingenuity on the display device side. An electronic device according to one aspect of the present invention has an input device, and a photosensor or a capacitive sensor can be used as the input device.

[0050] Here, as the light sensor, a light-receiving device that can be formed using the same process as the light-emitting device can be used. Therefore, if a capacitive sensor is not required, manufacturing costs can be reduced.

[0051] Furthermore, since the light-receiving device can be formed on the same surface as the light-emitting device, it does not need to be laminated onto the light-emitting device as in a capacitive sensor, allowing for a thinner display device. Consequently, stress during bending is easily relieved, and high reliability can be maintained even when the radius of curvature r is reduced.

[0052] Furthermore, since the light-receiving device can detect changes in light intensity and convert them into input actions, contactless input operations become possible. For example, it becomes possible to operate electronic devices even when they are in places that are out of reach. Also, since there is no need to directly touch the display unit 31 with a finger or other part of the body, electronic devices can be used hygienically. In addition, even when the capacitive sensor is unresponsive or malfunctions, such as when wearing gloves or when there are water droplets on the display surface, the light-receiving device can perform reliable input operations.

[0053] Furthermore, if the device has a light-emitting device that emits infrared light in addition to a light-emitting device that emits visible light, it is possible to display an image while emitting infrared light for sensing. Therefore, one embodiment of the present invention has a configuration that is highly compatible with functions other than display functions (in this case, light-receiving functions).

[0054] Furthermore, personal authentication can be performed by capturing images of fingerprints, palm prints, or veins using a light-receiving device. Note that an electronic device according to one aspect of the present invention may have both a light-receiving device and a capacitive sensor as input devices.

[0055] Furthermore, in one aspect of the present invention, since light-emitting devices that emit colors such as R (red), G (green), and B (blue) are produced using a lithography process, a color filter is not required, unlike when a white-emitting light-emitting device is used. Therefore, the display device can be made even thinner, and its reliability against bending can be improved.

[0056] Next, the authentication function using an input device in the electronic device 30a will be described. Here, fingerprint verification using a light-receiving device as the input device will be described, but fingerprint verification may also be performed using a capacitive sensor. Alternatively, vein verification may be performed instead of fingerprint verification.

[0057] Figure 6A shows the login operation when using the electronic device 30a. Here, login refers to the operation to obtain permission to use the electronic device, as well as permission to access specific devices via the network or access websites, and can also be referred to as authorization.

[0058] A light-receiving device is provided on the display unit 31 of the electronic device 30a, and a fingerprint can be captured by placing the fingers of a hand 45 in contact with the display unit 31. Keyboard keys 43 are also displayed on the display unit 31. For example, a fingerprint can be captured by using the light from a light-emitting device that displays the keyboard keys 43 and capturing the reflected light from the fingers with a light-receiving device provided near the light-emitting device. Alternatively, a light-emitting device may emit light with low visual sensitivity, such as infrared light, and a fingerprint can be captured by capturing the reflected light from the fingers with a light-receiving device.

[0059] The keyboard layout of the 43 keys is, for example, a QWERTY layout. In a QWERTY keyboard, one of the ten fingers of both hands is assigned to each key. Therefore, the light-receiving devices located at the position of each displayed key can capture fingerprints of all fingers.

[0060] While it is common to enter a string of characters (meaning a sequence of multiple characters and / or numbers) such as a name (ID) and password when logging in, in one embodiment of the present invention, the electronic device also verifies the fingerprint of the finger assigned to the key for entering these characters. In the following explanation, examples will be given using strings for the name (ID) and password, but single characters may also be used. Also, in Figures 6A and 6B, as an example, the displayed login screen is shown as "Log in," the name (ID) as "Username," and the password as "password," respectively.

[0061] For example, if the password is "abcklm", the fingerprints of the left little finger touching the 'a' key, the left index finger touching the 'b' key, the left middle finger touching the 'c' key, the right middle finger touching the 'k' key, the right ring finger touching the 'l' key, and the right index finger touching the 'm' key are captured during the password entry process and compared with pre-set fingerprint information. Therefore, by combining the input and matching of the string with the capture and matching of the fingerprints assigned to those keys, a highly secure electronic device can be created.

[0062] Alternatively, as shown in Figure 6B, a stylus 46 may be used instead of a finger. In this case, the shape of the tip of the stylus 46 is imaged and verified. Alternatively, a light source may be provided at the tip of the stylus 46, and pulsed light may be emitted towards the key without contact, and the received pulsed light may be verified for authentication. Therefore, input operations will only be possible with registered styluses.

[0063] The authentication process and subsequent security management in Figure 6A will be explained using the flowchart shown in Figure 7.

[0064] First, you register your authentication information (Step S0). This involves typing your name (ID), the string of characters used for your password, and any text containing your name (ID) and password using your usual typing method, and registering this information, along with your fingerprint information corresponding to each key, on the electronic device. Since typing methods vary from person to person, the user can decide which fingers to assign to each key. This does not have to be all the fingers of both hands; it could be any number of fingers on either hand or one hand, a single finger, or even a toe. The name (ID), the string of characters used for your password, and the fingerprint information mentioned above are referred to as registered information.

[0065] Next, the login screen is displayed, and the user touches keyboard key 43 to enter their name (ID) (Step S1). Then, in addition to checking whether the name (ID) string matches the registered information, the fingerprints of the fingers that touched each key are checked to see if they match the fingerprints that have been registered in advance (Step S2).

[0066] If the string matches but the fingerprint does not, or if the fingerprint detection accuracy is low, you will be asked to re-enter the information (Step S3). If you are the user, return to Step S1 and re-enter the information. If you are not the user, you will not be able to proceed to the next step even if the name (ID) matches the registered information.

[0067] If the fingerprint matches in step S2, the process proceeds to password entry (step S4). Then, in addition to checking whether the password string matches the registered information, the fingerprints of the fingers that touched each key are checked to see if they match the fingerprints that have been previously registered (step S5).

[0068] If the string matches but the fingerprint does not, or if the fingerprint detection accuracy is low, you will be asked to re-enter the information (step S6). If you are the user, return to step S4 and re-enter the information. If you are not the user, you will not be able to log in even if the password matches the registered information.

[0069] If the fingerprint matches in step S5, login is completed (step S7). This completes the first authentication process. Note that the above example shows matching string information with fingerprint information for both the name (ID) and password, but fingerprint information matching may be combined with matching only for either the name (ID) or password. Alternatively, login may be completed using only one of the following: name (ID) matching and fingerprint matching, or password matching and fingerprint matching.

[0070] Next, we will explain security management after the authentication process. Here, we assume that there is input via keyboard key 43 after the initial authentication process. If there is no input, it is preferable to prompt the user to log in again using a timer or similar method.

[0071] After login is complete, when input activity on keyboard key 43 is detected (step S8), the fingerprint of the finger that touched each key is checked against a pre-registered fingerprint (step S9).

[0072] If the fingerprint matches in step S9, check whether to terminate (step S10). If not to terminate, repeat steps S8 through S10. If not to detect all input actions, a timer operation or the like may be added before step S8. Steps S8 through S10 correspond to the second authentication operation.

[0073] If the fingerprint does not match in step S9, the user may have changed during the loop, and they are forcibly logged out. Logging out revokes the authorization obtained in the first authentication process. The loop may be repeated several times before logging out in case the fingerprint detection accuracy is low. Alternatively, login may be allowed to continue if some fingerprints match. The user can set the logout threshold for fingerprint matching status.

[0074] As described above, in one aspect of the present invention, in addition to matching string information such as passwords, the authentication condition is that the fingerprint information assigned to the key for inputting the string information must also match, making it possible to create an electronic device with extremely high security.

[0075] Furthermore, the entered character information and acquired fingerprint information may be used for purposes other than the authentication described above. For example, since an individual can be identified by fingerprint information, it is possible to store strings of characters that the individual frequently uses. By using this stored information, it becomes possible to automatically correct typos or mistranslations. Artificial intelligence (AI) may also be used to recognize typos or mistranslations.

[0076] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0077] (Embodiment 2) This embodiment describes a display device according to one aspect of the present invention. The display device exemplified below can be suitably used in the electronic device described in Embodiment 1.

[0078] A display unit of a display device according to one aspect of the present invention includes a light-receiving device and a light-emitting device. The display unit has the function of displaying an image using the light-emitting device. Furthermore, the display unit has either or both the function of capturing an image and / or the function of sensing using the light-receiving device.

[0079] Alternatively, a display device according to one aspect of the present invention may have a configuration comprising a light-receiving device (also called a light-emitting or light-receiving device) and a light-emitting device.

[0080] First, a display device having a light-receiving device and a light-emitting device will be described.

[0081] A display device according to one aspect of the present invention has a display unit comprising a light-receiving device and a light-emitting device. In this display device according to one aspect of the present invention, the light-emitting devices are arranged in a matrix in the display unit, and an image can be displayed on the display unit. Furthermore, the light-receiving devices are arranged in a matrix in the display unit, and the display unit has either or both an imaging function and a sensing function. The display unit can be used as an image sensor, a touch sensor, etc. That is, by detecting light with the display unit, it is possible to capture an image or detect touch operations of an object (finger, pen, etc.). Moreover, in this display device according to one aspect of the present invention, the light-emitting device can be used as a light source for a sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0082] In one embodiment of the present invention, when an object reflects (or scatters) light emitted by a light-emitting device of the display unit, a light-receiving device can detect the reflected (or scattered) light, making it possible to perform actions such as image capture and touch operation detection even in dark places.

[0083] A light-emitting device in a display device according to one aspect of the present invention functions as a display device (also called a display element).

[0084] As the light-emitting device, it is preferable to use EL elements (also called EL devices) such as OLEDs and QLEDs. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials. Alternatively, LEDs such as microLEDs can also be used as light-emitting devices.

[0085] A display device according to one aspect of the present invention has the function of detecting light using a light-receiving device.

[0086] When a light-receiving device is used as an image sensor, a display device can capture an image using the light-receiving device. For example, the display device can be used as a scanner.

[0087] An electronic device to which a display device according to one aspect of the present invention is applied can acquire data related to biometric information such as fingerprints and palm prints using its function as an image sensor. In other words, a biometric authentication sensor can be built into the display device. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided in the display device, enabling miniaturization and weight reduction of the electronic device.

[0088] Furthermore, when a light-receiving device is used as a touch sensor, the display device can use the light-receiving device to detect touch operations on an object. In other words, the light-receiving device can be rephrased as an input device.

[0089] For example, a pn-type or pin-type photodiode can be used as the light-receiving device. The light-receiving device functions as a photoelectric conversion element (also called a photoelectric conversion device) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving device is determined based on the amount of light incident on it.

[0090] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to a variety of devices.

[0091] In one aspect of the present invention, an organic EL element (also called an organic EL device) is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL element.

[0092] If all the layers constituting an organic EL element and an organic photodiode were to be fabricated separately, the number of film deposition steps would become enormous. However, since organic photodiodes have many layers that can share the same configuration as organic EL elements, the increase in film deposition steps can be suppressed by depositing these common layers in a single process.

[0093] For example, one of a pair of electrodes (the common electrode) can be a common layer for both the photodetector and the light-emitting device. Alternatively, at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer may be a common layer for both the photodetector and the light-emitting device. By having a common layer for both the photodetector and the light-emitting device in this way, the number of film deposition cycles and masks can be reduced, thereby reducing the manufacturing process and cost of the display device. Furthermore, a display device having a photodetector can be manufactured using existing manufacturing equipment and methods for display devices.

[0094] Next, a light-receiving device and a display device having a light-emitting device will be described. Note that explanations of functions, operations, and effects similar to those described above may be omitted.

[0095] In a display device according to one aspect of the present invention, subpixels exhibiting any color have a light-receiving device instead of a light-emitting device, while subpixels exhibiting other colors have a light-emitting device. The light-receiving device has both a function to emit light (light-emitting function) and a function to receive light (light-receiving function). For example, if a pixel has three subpixels, a red subpixel, a green subpixel, and a blue subpixel, at least one subpixel has a light-receiving device, and the other subpixels have light-emitting devices. Therefore, the display unit of the display device according to one aspect of the present invention has the function of displaying an image using both a light-receiving device and a light-emitting device.

[0096] By having a light-receiving device serve as both a light-emitting device and a light-receiving device, it is possible to add a light-receiving function to a pixel without increasing the number of subpixels included in the pixel. This makes it possible to add either or both an imaging function and a sensing function to the display section of a display device while maintaining the aperture ratio of the pixel (aperture ratio of each subpixel) and the resolution of the display device. Therefore, one embodiment of the present invention allows for a higher aperture ratio of the pixel and facilitates high resolution compared to a case where subpixels having light-receiving devices are provided separately from subpixels having light-emitting devices.

[0097] A display device according to one aspect of the present invention has a display unit in which light-emitting and light-receiving devices and light-emitting devices are arranged in a matrix, and an image can be displayed on the display unit. The display unit can also be used as an image sensor, a touch sensor, etc. In a display device according to one aspect of the present invention, the light-emitting device can be used as a light source for a sensor. Therefore, imaging and detection of touch operations are possible even in dark places.

[0098] Light-emitting and receiving devices can be fabricated by combining organic EL elements and organic photodiodes. For example, a light-emitting and receiving device can be fabricated by adding an active layer of an organic photodiode to the stacked structure of an organic EL element. Furthermore, when fabricating a light-emitting and receiving device by combining an organic EL element and an organic photodiode, the number of film deposition steps can be suppressed by depositing layers that can have a common structure with the organic EL element in a single process.

[0099] For example, one of a pair of electrodes (the common electrode) can be a common layer for both the light-emitting / receiving device and the light-emitting device. Alternatively, at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer can be a common layer for both the light-emitting / receiving device and the light-emitting device.

[0100] Furthermore, the layers of a light-receiving device may have different functions depending on whether the device is functioning as a light-receiving device or a light-emitting device. In this specification, the components are referred to based on their function when the light-receiving device is functioning as a light-emitting device.

[0101] The display device of this embodiment has the function of displaying an image using a light-emitting device and a light-receiving device. In other words, the light-emitting device and the light-receiving device function as display elements.

[0102] The display device of this embodiment has a function of detecting light using a light-receiving device. The light-receiving device can detect light with a shorter wavelength than the light it emits itself.

[0103] When the light-receiving device is used as an image sensor, the display device of this embodiment can capture an image using the light-receiving device. Furthermore, when the light-receiving device is used as a touch sensor, the display device of this embodiment can detect touch operations on an object using the light-receiving device.

[0104] The light-receiving and light-emitting device functions as a photoelectric conversion element. The light-receiving and light-emitting device can be fabricated by adding the active layer of a photodetector to the configuration of the light-emitting device described above. For example, the active layer of a pn-type or pin-type photodiode can be used for the light-receiving and light-emitting device.

[0105] In particular, it is preferable to use an organic photodiode with an active layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to a variety of devices.

[0106] In the following section, a display device, which is an example of a display device according to one aspect of the present invention, will be described in more detail with reference to the drawings.

[0107] [Example of display device configuration 1] [Configuration Example 1-1] Figure 8A shows a schematic diagram of the display panel 200. The display panel 200 includes a substrate 201, a substrate 202, a light receiving device 212, a light-emitting device 211R, a light-emitting device 211G, a light-emitting device 211B, a functional layer 203, and the like.

[0108] Light-emitting devices 211R, 211G, 211B, and light-receiving device 212 are located between substrates 201 and 202. Light-emitting devices 211R, 211G, and 211B emit red (R), green (G), or blue (B) light, respectively. In the following, when light-emitting devices 211R, 211G, and 211B are not distinguished, they may be referred to simply as light-emitting device 211.

[0109] The display panel 200 has a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has one light-emitting device. For example, a pixel can have a configuration with three subpixels (three colors: R, G, B, or three colors: yellow (Y), cyan (C), and magenta (M)), or a configuration with four subpixels (four colors: R, G, B, and white (W), or four colors: R, G, B, and Y). Furthermore, each pixel has a light-receiving device 212. The light-receiving device 212 may be provided for all pixels or for some pixels. Also, a single pixel may have multiple light-receiving devices 212.

[0110] Figure 8A shows how a finger 220 touches the surface of the substrate 202. A portion of the light emitted by the light-emitting device 211G is reflected at the contact point between the substrate 202 and the finger 220. A portion of the reflected light is then incident on the light-receiving device 212, allowing it to detect that the finger 220 has touched the substrate 202. In other words, the display panel 200 can function as a touch panel.

[0111] The functional layer 203 includes circuits for driving the light-emitting devices 211R, 211G, and 211B, and a circuit for driving the light-receiving device 212. The functional layer 203 is provided with switches, transistors, capacitors, wiring, etc. However, when the light-emitting devices 211R, 211G, 211B, and the light-receiving device 212 are driven in a passive matrix manner, the configuration may be made without switches, transistors, etc.

[0112] The display panel 200 preferably has a function to detect the fingerprint of the finger 220. Figure 8B schematically shows an enlarged view of the contact area when the finger 220 is in contact with the substrate 202. Figure 8B also shows the light-emitting devices 211 and light-receiving devices 212 arranged alternately.

[0113] Fingerprints are formed on finger 220 by recesses and protrusions. Therefore, as shown in Figure 8B, the protrusions of the fingerprints are in contact with the substrate 202.

[0114] Light reflected from a surface or interface can be either specular or diffuse. Specularly reflected light is highly directional, with the angle of incidence and the angle of reflection being the same, while diffusely reflected light is less directional, with low angle dependence of intensity. The light reflected from the surface of finger 220 is predominantly diffuse. On the other hand, the light reflected from the interface between substrate 202 and the atmosphere is predominantly specular.

[0115] The intensity of light reflected from the contact or non-contact surfaces of the finger 220 and the substrate 202, and incident on the light-receiving device 212 located directly beneath them, is the sum of specularly reflected and diffusely reflected light. As described above, in the recessed areas of the finger 220, the substrate 202 and the finger 220 do not come into contact, so specularly reflected light (indicated by the solid arrow) is dominant, while in the convex areas, they come into contact, so diffusely reflected light from the finger 220 (indicated by the dashed arrow) is dominant. Therefore, the intensity of light received by the light-receiving device 212 located directly beneath the recessed areas is higher than that received by the light-receiving device 212 located directly beneath the convex areas. This allows for imaging of the fingerprint of the finger 220.

[0116] The spacing between the light-receiving devices 212 is set to be smaller than the distance between two protrusions of a fingerprint, preferably the distance between an adjacent recess and a protrusion, thereby enabling the acquisition of a clear fingerprint image. Since the distance between recesses and protrusions in a human fingerprint is approximately 200 μm, for example, the spacing between the light-receiving devices 212 is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0117] Figure 8C shows an example of a fingerprint image captured by the display panel 200. In Figure 8C, the outline of the finger 220 is shown with a dashed line and the outline of the contact area 221 is shown with a dashed line within the imaging range 223. Within the contact area 221, a high-contrast fingerprint 222 can be captured due to the difference in the amount of light incident on the light-receiving device 212.

[0118] The display panel 200 can also function as a touch panel and a pen tablet. Figure 8D shows the tip of the stylus 225 in contact with the substrate 202 and being slid in the direction of the dashed arrow.

[0119] As shown in Figure 8D, diffusely reflected light diffused at the contact surface between the tip of the stylus 225 and the substrate 202 is incident on the light-receiving device 212 located in the area overlapping with the contact surface, thereby enabling high-precision detection of the position of the tip of the stylus 225.

[0120] Figure 8E shows an example of the trajectory 226 of the stylus 225 detected by the display panel 200. Because the display panel 200 can detect the position of the object being detected, such as the stylus 225, with high positional accuracy, it is possible to perform high-resolution drawing in drawing applications, etc. Furthermore, unlike when using capacitive touch sensors or electromagnetic induction type touch pens, it is possible to detect the position of the object being detected even if it has high insulating properties, so the material of the tip of the stylus 225 is not a concern, and various writing instruments (e.g., brushes, glass pens, quill pens, etc.) can be used.

[0121] Here, Figures 8F to 8H show an example of a pixel applicable to the display panel 200.

[0122] The pixels shown in Figures 8F and 8G each have a red (R) light-emitting device 211R, a green (G) light-emitting device 211G, a blue (B) light-emitting device 211B, and a light-receiving device 212. Each pixel has a pixel circuit for driving the light-emitting devices 211R, 211G, 211B, and 212, respectively.

[0123] Figure 8F shows an example where three light-emitting devices and one light-receiving device are arranged in a 2x2 matrix. Figure 8G shows an example where three light-emitting devices are arranged in a row, with one horizontally elongated light-receiving device 212 positioned below them.

[0124] The pixel shown in Figure 8H is an example having a white (W) light-emitting device 211W. Here, four light-emitting devices are arranged in a row, with a light-receiving device 212 positioned below them.

[0125] Furthermore, the pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0126] [Configuration Example 1-2] The following describes an example of a configuration comprising a light-emitting device that emits visible light, a light-emitting device that emits infrared light, and a light-receiving device.

[0127] The display panel 200A shown in Figure 9A includes a light-emitting device 211IR in addition to the configuration illustrated in Figure 8A. The light-emitting device 211IR is a light-emitting device that emits infrared light (IR). In this case, it is preferable to use a light-receiving device 212 that can receive at least the infrared light (IR) emitted by the light-emitting device 211IR. It is even more preferable to use a light-receiving device 212 that can receive both visible light and infrared light.

[0128] As shown in Figure 9A, when a finger 220 touches the substrate 202, infrared light (IR) emitted from the light-emitting device 211IR is reflected by the finger 220, and a portion of this reflected light is incident on the light-receiving device 212, thereby allowing the position information of the finger 220 to be acquired.

[0129] Figures 9B to 9D show examples of pixels applicable to the display panel 200A.

[0130] Figure 9B shows an example where three light-emitting devices are arranged in a row, with light-emitting device 211IR and light-receiving device 212 positioned side-by-side below them. Figure 9C shows an example where four light-emitting devices, including light-emitting device 211IR, are arranged in a row, with light-receiving device 212 positioned below them.

[0131] Figure 9D also shows an example in which the light-emitting device 211IR is at the center, with three light-emitting devices and a light-receiving device 212 arranged on all four sides.

[0132] In addition, in the pixels shown in Figures 9B to 9D, the light-emitting devices can be swapped with each other, and the light-emitting devices and light-receiving devices can be swapped.

[0133] [Configuration Examples 1-3] The following describes an example of a configuration comprising a light-emitting device that emits visible light and a light-receiving device that emits and receives visible light.

[0134] The display panel 200B shown in Figure 10A includes a light-emitting device 211B, a light-emitting device 211G, and a light-receiving device 213R. The light-receiving device 213R has the function of a light-emitting device that emits red (R) light and a function of a photoelectric conversion element that receives visible light. Figure 10A shows an example in which the light-receiving device 213R receives green (G) light emitted by the light-emitting device 211G. The light-receiving device 213R may also receive blue (B) light emitted by the light-emitting device 211B. Furthermore, the light-receiving device 213R may receive both green and blue light.

[0135] For example, it is preferable that the light-receiving device 213R receives light with a shorter wavelength than the light it emits. Alternatively, the light-receiving device 213R may be configured to receive light with a longer wavelength than the light it emits (e.g., infrared light). The light-receiving device 213R may also be configured to receive light with a wavelength similar to the light it emits, but in that case, it may also receive the light it emits, which may reduce its luminescence efficiency. Therefore, it is preferable that the light-receiving device 213R be configured such that the peaks of its emission spectrum and the peaks of its absorption spectrum do not overlap as much as possible.

[0136] Furthermore, the light emitted by the light-receiving device is not limited to red light. Nor is the light emitted by the light-receiving device limited to a combination of green and blue light. For example, the light-receiving device can be an element that emits green or blue light and receives light of a different wavelength than the light it emits.

[0137] In this way, by having the light-emitting and light-receiving device 213R serve as both a light-emitting and light-receiving device, the number of elements arranged in a single pixel can be reduced. This makes it easier to achieve higher resolution, higher aperture ratio, and higher resolution.

[0138] Figures 10B to 10I show examples of pixels applicable to the display panel 200B.

[0139] Figure 10B shows an example where the light-emitting / receiving device 213R, light-emitting device 211G, and light-emitting device 211B are arranged in a single row. Figure 10C shows an example where the light-emitting devices 211G and 211B are arranged alternately in the vertical direction, with the light-emitting / receiving device 213R positioned to the side of them.

[0140] Figure 10D shows an example where three light-emitting devices (light-emitting devices 211G, 211B, and 211X) and one light-receiving device are arranged in a 2x2 matrix. Light-emitting device 211X is an element that emits light other than R, G, and B. Examples of light other than R, G, and B include white (W), yellow (Y), cyan (C), magenta (M), infrared (IR), and ultraviolet (UV). If light-emitting device 211X emits infrared light, it is preferable that the light-receiving device has the function of detecting infrared light, or the function of detecting both visible light and infrared light. The wavelength of light detected by the light-receiving device can be determined according to the application of the sensor.

[0141] Figure 10E shows two pixels. The area enclosed by the dotted line, containing three elements, corresponds to one pixel. Each pixel has a light-emitting device 211G, a light-emitting device 211B, and a light-receiving device 213R. In the left pixel shown in Figure 10E, the light-emitting device 211G is located in the same row as the light-receiving device 213R, and the light-emitting device 211B is located in the same column as the light-receiving device 213R. In the right pixel shown in Figure 10E, the light-emitting device 211G is located in the same row as the light-receiving device 213R, and the light-emitting device 211B is located in the same column as the light-emitting device 211G. In the pixel layout shown in Figure 10E, the light-receiving devices 213R, 211G, and 211B are repeatedly arranged in both odd and even rows, and in each column, the light-emitting devices or light-receiving devices of different colors are arranged in odd and even rows.

[0142] Figure 10F shows four pixels to which a PenTile array has been applied, and two adjacent pixels have light-emitting or light-receiving devices that emit two different colors of light in different combinations. Figure 10F also shows the top surface shape of the light-emitting or light-receiving device.

[0143] In Figure 10F, the upper left and lower right pixels have a light-emitting / receiving device 213R and a light-emitting device 211G. The upper right and lower left pixels have a light-emitting device 211G and a light-emitting device 211B. In other words, in the example shown in Figure 10F, each pixel is provided with a light-emitting device 211G.

[0144] The top surface shape of the light-emitting device and the light-receiving device is not particularly limited and can be a circle, ellipse, polygon, polygon with rounded corners, etc. Figure 10F shows an example where the top surface shape of the light-emitting device and the light-receiving device is a square (rhombus) tilted at approximately 45 degrees. Note that the top surface shapes of the light-emitting device and the light-receiving device for each color may be different from each other, or they may be the same for some or all colors.

[0145] Furthermore, the sizes of the light-emitting regions (or light-receiving regions) of each color's light-emitting device and light-receiving device may differ from each other, or they may be the same for some or all colors. For example, in Figure 10F, the area of ​​the light-emitting region of the light-emitting device 211G provided in each pixel may be smaller than the light-emitting region (or light-receiving region) of the other elements.

[0146] Figure 10G is a modified version of the pixel arrangement shown in Figure 10F. Specifically, the configuration in Figure 10G is obtained by rotating the configuration in Figure 10F by 45 degrees. In Figure 10F, it was explained that one pixel has two elements, but as shown in Figure 10G, it can also be considered that one pixel is composed of four elements.

[0147] Figure 10H shows a modified version of the pixel arrangement shown in Figure 10F. The upper left and lower right pixels in Figure 10H have a light-emitting / receiving device 213R and a light-emitting device 211G. The upper right and lower left pixels also have a light-emitting / receiving device 213R and a light-emitting device 211B. In other words, in the example shown in Figure 10H, each pixel is provided with a light-emitting / receiving device 213R. Because each pixel is provided with a light-emitting / receiving device 213R, the configuration shown in Figure 10H can perform imaging with higher resolution compared to the configuration shown in Figure 10F. This can improve the accuracy of, for example, biometric authentication.

[0148] Figure 10I shows a modified version of the pixel array shown in Figure 10H, which is obtained by rotating the pixel array by 45 degrees.

[0149] In Figure 10I, we explain that one pixel is composed of four elements (two light-emitting devices and two light-receiving devices). In this way, by having multiple light-receiving devices with light-receiving capabilities in a single pixel, imaging can be performed with high resolution. Therefore, the accuracy of biometric authentication can be improved. For example, the resolution of the image can be made √2 times the resolution of the display.

[0150] A display device to which the configuration shown in Figure 10H or Figure 10I is applied has p (where p is an integer greater than or equal to 2) first light-emitting devices, q (where q is an integer greater than or equal to 2) second light-emitting devices, and r (where r is an integer greater than p and greater than q) light-receiving devices. p and r satisfy r = 2p. Also, p, q, and r satisfy r = p + q. One of the first and second light-emitting devices emits green light, and the other emits blue light. The light-receiving devices emit red light and have a light-receiving function.

[0151] For example, when detecting touch operations using a light-receiving device, it is preferable that the light emitted from the light source is not easily visible to the user. Since blue light is less visible than green light, it is preferable to use a light-emitting device that emits blue light as the light source. Therefore, it is preferable that the light-receiving device has the function of receiving blue light. However, it is not limited to this, and the light-emitting device to be used as the light source can be appropriately selected according to the sensitivity of the light-receiving device.

[0152] As described above, various pixel arrangements can be applied to the display device of this embodiment.

[0153] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0154] (Embodiment 3) In this embodiment, a light-emitting device (also referred to as a light-emitting device) and a light-receiving device (also referred to as a light-receiving device) that can be used in a display device according to one aspect of the present invention will be described.

[0155] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (Metal Maskless) structured devices. Because MML structured devices are fabricated without a metal mask, they offer greater design flexibility in terms of pixel arrangement and pixel shape compared to display devices with FMM or MM structured devices.

[0156] Furthermore, in the manufacturing method for MML-structured display devices, the island-shaped organic layers (hereinafter referred to as EL layers) that constitute the organic EL elements are not formed by the pattern of a metal mask, but rather by processing after the EL layer has been deposited on one surface. Therefore, it is possible to realize high-definition display devices or display devices with a high aperture ratio, which have been difficult to achieve until now. In addition, since the EL layers can be manufactured separately for each color, it is possible to realize display devices that are extremely vivid, have high contrast, and have high display quality. Moreover, by providing a sacrificial layer on the EL layer, the damage that the EL layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0157] Furthermore, a display device according to one aspect of the present invention may have a structure in which no insulator is provided to cover the ends of the pixel electrodes. In other words, there is no insulator between the pixel electrodes and the EL layer. This configuration allows for efficient extraction of light emitted from the EL layer, thereby significantly reducing the viewing angle dependence. For example, in a display device according to one aspect of the present invention, the viewing angle (the maximum angle at which a constant contrast ratio is maintained when viewing the screen from an oblique direction) can be set to a range of 100° or more and less than 180°, preferably 150° or more and 170° or less. The above viewing angle can be applied to both vertical and horizontal viewing angles. By using a display device according to one aspect of the present invention, the viewing angle dependence is improved, and the visibility of the image can be enhanced.

[0158] Furthermore, when using a fine metal mask (FMM) structure for the display device, there may be limitations on the pixel arrangement configuration. The FMM structure will be explained below.

[0159] To fabricate an FMM structure, a metal mask (also called an FMM) with openings is set opposite the substrate so that the EL material is deposited in the desired area during EL deposition. Then, EL deposition is performed through the FMM to deposit the EL material in the desired area. As the size of the substrate increases during EL deposition, the size and weight of the FMM also increase. In addition, the FMM may deform because heat is applied to it during EL deposition. Alternatively, there are methods that apply a certain tension to the FMM during EL deposition, so the weight and strength of the FMM are important parameters.

[0160] Therefore, when designing the pixel arrangement configuration of an FMM structure device, it is necessary to consider the above parameters and other factors, and the design must be considered under certain limitations. On the other hand, in one embodiment of the present invention, since the display device is manufactured using an MML structure, it offers superior advantages such as greater flexibility in the pixel arrangement configuration compared to the FMM structure. Furthermore, this configuration has high compatibility with flexible devices, for example, and various circuit arrangements can be used for either the pixels or the driving circuit, or both.

[0161] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. Also, in this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0162] [Light-emitting devices] Furthermore, light-emitting devices can be broadly classified into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and it is preferable that the light-emitting unit includes one or more light-emitting layers. When obtaining white light emission using two light-emitting layers, the light-emitting layers should be selected such that the light-emitting colors of each of the two layers are complementary colors. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary colors, a configuration that emits white light as a whole can be obtained. Also, when obtaining white light emission using three or more light-emitting layers, the light-emitting device should be configured so that the light-emitting colors of the three or more layers combine to emit white light as a whole.

[0163] A tandem device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the brightness per given current can be increased, and a more reliable light-emitting device can be achieved compared to a single structure. To obtain white light emission in a tandem structure, the light from the light-emitting layers of multiple light-emitting units can be combined to produce white light emission. The combination of light-emitting colors that produces white light emission is the same as that for a single structure. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0164] Furthermore, when comparing the aforementioned white light-emitting devices (single or tandem structure) with light-emitting devices with an SBS structure, the SBS structure light-emitting device can consume less power than the white light-emitting device. Therefore, when minimizing power consumption is desired, the SBS structure light-emitting device is preferable. On the other hand, the white light-emitting device is preferable because its manufacturing process is simpler than that of the SBS structure light-emitting device, allowing for lower manufacturing costs or higher manufacturing yields.

[0165] <Example of light-emitting device configuration> As shown in Figure 11A, the light-emitting device has an EL layer 790 between a pair of electrodes (lower electrode 791, upper electrode 792). The EL layer 790 can be composed of multiple layers, such as layer 720, light-emitting layer 711, and layer 730. Layer 720 may include, for example, a layer containing a material with high electron injection properties (electron injection layer) and a layer containing a material with high electron transport properties (electron transport layer). The light-emitting layer 711 may include, for example, a light-emitting compound. Layer 730 may include, for example, a layer containing a material with high hole injection properties (hole injection layer) and a layer containing a material with high hole transport properties (hole transport layer).

[0166] A configuration having a layer 720, an emissive layer 711, and a layer 730 provided between a pair of electrodes can function as a single emissive unit, and in this specification, the configuration shown in Figure 11A is referred to as a single structure.

[0167] Furthermore, Figure 11B shows a modified example of the EL layer 790 of the light-emitting device shown in Figure 11A. Specifically, the light-emitting device shown in Figure 11B includes a layer 730-1 on the lower electrode 791, a layer 730-2 on layer 730-1, a light-emitting layer 711 on layer 730-2, a layer 720-1 on the light-emitting layer 711, a layer 720-2 on layer 720-1, and an upper electrode 792 on layer 720-2. For example, when the lower electrode 791 is the anode and the upper electrode 792 is the cathode, layer 730-1 functions as a hole injection layer, layer 730-2 functions as a hole transport layer, layer 720-1 functions as an electron transport layer, and layer 720-2 functions as an electron injection layer. Alternatively, if the lower electrode 791 is used as the cathode and the upper electrode 792 as the anode, layer 730-1 functions as an electron injection layer, layer 730-2 functions as an electron transport layer, layer 720-1 functions as a hole transport layer, and layer 720-2 functions as a hole injection layer. By using such a layer structure, it is possible to efficiently inject carriers into the light-emitting layer 711 and increase the efficiency of carrier recombination within the light-emitting layer 711.

[0168] Furthermore, as shown in Figures 11C and 11D, a configuration in which multiple light-emitting layers (light-emitting layers 711, 712, and 713) are provided between layer 720 and layer 730 is also a variation of the single structure.

[0169] Furthermore, as shown in Figures 11E and 11F, a configuration in which multiple light-emitting units (EL layers 790a, EL layers 790b) are connected in series via an intermediate layer (charge generation layer) 740 is referred to as a tandem structure in this specification. In this specification, the configuration shown in Figures 11E and 11F is referred to as a tandem structure, but it is not limited to this, and for example, a tandem structure may also be called a stack structure. By using a tandem structure, a light-emitting device capable of high-brightness light emission can be made.

[0170] In Figure 11C, the light-emitting layers 711, 712, and 713 may be made of light-emitting materials that emit light of the same color.

[0171] Furthermore, different light-emitting materials may be used for the light-emitting layers 711, 712, and 713. When the light emitted by the light-emitting layers 711, 712, and 713 are complementary in color, white light emission is obtained. Figure 11D shows an example in which a colored layer 795, which functions as a color filter, is provided. By passing white light through the color filter, light of the desired color can be obtained.

[0172] Furthermore, in Figure 11E, the same light-emitting material may be used for both the light-emitting layer 711 and the light-emitting layer 712. Alternatively, light-emitting materials that emit light of different colors may be used for both the light-emitting layer 711 and the light-emitting layer 712. When the light emitted by the light-emitting layer 711 and the light emitted by the light-emitting layer 712 are complementary colors, white light emission is obtained. Figure 11F shows an example in which a colored layer 795 is further provided.

[0173] Furthermore, in Figures 11C, 11D, 11E, and 11F, as shown in Figure 11B, layer 720 and layer 730 may be a laminated structure consisting of two or more layers.

[0174] Furthermore, in Figure 11D, the same light-emitting material may be used for light-emitting layers 711, 712, and 713. Similarly, in Figure 11F, the same light-emitting material may be used for light-emitting layers 711 and 712. In this case, by applying a color conversion layer instead of the colored layer 795, it is possible to obtain light of a desired color different from that of the light-emitting material. For example, by using a blue light-emitting material for each light-emitting layer, blue light can pass through the color conversion layer to obtain light with a longer wavelength than blue (e.g., red, green, etc.). Fluorescent materials, phosphorescent materials, or quantum dots can be used as the color conversion layer.

[0175] A structure in which different light-emitting layers (in this case, blue (B), green (G), and red (R)) are created for each light-emitting device is sometimes called an SBS (Side By Side) structure.

[0176] The light-emitting color of the light-emitting device can be red, green, blue, cyan, magenta, yellow, or white, depending on the material that makes up the EL layer 790. Furthermore, the color purity can be further enhanced by adding a microcavity structure to the light-emitting device.

[0177] A light-emitting device that emits white light preferably has a configuration that includes two or more types of light-emitting materials in its light-emitting layer. To obtain white light emission, it is sufficient to select light-emitting materials such that the light emitted by each of the two or more materials is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a light-emitting device that emits white light as a whole can be obtained. The same applies to light-emitting devices that have three or more light-emitting layers.

[0178] The light-emitting layer preferably contains two or more light-emitting materials that emit light such as R (red), G (green), B (blue), Y (yellow), and O (orange). Alternatively, it is preferable to have two or more light-emitting materials, and for each light-emitting material to emit light that contains spectral components of two or more colors from R, G, and B.

[0179] [Light receiving device] Figure 12A shows schematic cross-sectional views of the light-emitting devices 750R, 750G, 750B, and 760. The light-emitting devices 750R, 750G, 750B, and 760 all share a common upper electrode 792 layer.

[0180] The light-emitting device 750R has a pixel electrode 791R, layers 751 and 752, a light-emitting layer 753R, layers 754 and 755, and an upper electrode 792. The light-emitting device 750G has a pixel electrode 791G and a light-emitting layer 753G. The light-emitting device 750B has a pixel electrode 791B and a light-emitting layer 753B.

[0181] Layer 751 includes, for example, a layer containing a material with high hole injection properties (hole injection layer). Layer 752 includes, for example, a layer containing a material with high hole transport properties (hole transport layer). Layer 754 includes, for example, a layer containing a material with high electron transport properties (electron transport layer). Layer 755 includes, for example, a layer containing a material with high electron injection properties (electron injection layer).

[0182] Alternatively, the configuration may include layer 751 having an electron injection layer, layer 752 having an electron transport layer, layer 754 having a hole transport layer, and layer 755 having a hole injection layer.

[0183] Note that in Figure 12A, layers 751 and 752 are shown separately, but this is not the only way. For example, if layer 751 has the functions of both a hole injection layer and a hole transport layer, or if layer 751 has the functions of both an electron injection layer and an electron transport layer, layer 752 may be omitted.

[0184] Furthermore, the light-emitting layer 753R of the light-emitting device 750R contains a light-emitting material that emits red light, the light-emitting layer 753G of the light-emitting device 750G contains a light-emitting material that emits green light, and the light-emitting layer 753B of the light-emitting device 750B contains a light-emitting material that emits blue light. The light-emitting devices 750G and 750B have a configuration in which the light-emitting layer 753R of the light-emitting device 750R is replaced with the light-emitting layer 753G and light-emitting layer 753B, respectively, and the other configurations are the same as those of the light-emitting device 750R.

[0185] Layers 751, 752, 754, and 755 may have the same configuration (material, film thickness, etc.) for each color of light-emitting device, or they may have different configurations from each other.

[0186] The light-receiving device 760 has a pixel electrode 791PD, layers 761, 762, 763, and an upper electrode 792. The light-receiving device 760 can be configured without a hole injection layer and an electron injection layer.

[0187] Layer 762 has an active layer (also called a photoelectric conversion layer). Layer 762 has the function of absorbing light in a specific wavelength band and generating carriers (electrons and holes).

[0188] Layers 761 and 763 each have, for example, either a hole transport layer or an electron transport layer. If layer 761 has a hole transport layer, then layer 763 has an electron transport layer. Conversely, if layer 761 has an electron transport layer, then layer 763 has a hole transport layer.

[0189] Furthermore, the light-receiving device 760 may have the pixel electrode 791PD as the anode and the upper electrode 792 as the cathode, or the pixel electrode 791PD as the cathode and the upper electrode 792 as the anode.

[0190] Figure 12B is a modified example of Figure 12A. Figure 12B shows an example in which layer 755 is provided in common between each light-emitting device and between each photodetector, similar to the upper electrode 792. In this case, layer 755 can be called a common layer. By providing one or more common layers between each light-emitting device and between each photodetector in this way, the manufacturing process can be simplified, and thus manufacturing costs can be reduced.

[0191] Here, layer 755 functions as an electron injection layer or hole injection layer for the light-emitting device 750R, etc. At the same time, it functions as an electron transport layer or hole transport layer for the photodetector 760. Therefore, the photodetector 760 shown in Figure 12B does not need to have a layer 763 that functions as an electron transport layer or hole transport layer.

[0192] [Light-emitting devices] Here, we will describe a specific example of the configuration of a light-emitting device.

[0193] The light-emitting device has at least a light-emitting layer. The light-emitting device may also have layers other than the light-emitting layer that include a material with high hole injection properties, a material with high hole transport properties, a hole-blocking material, a material with high electron transport properties, an electron-blocking material, a material with high electron injection properties, an electron-blocking material, or a bipolar material (a material with high electron transport and hole transport properties).

[0194] The light-emitting device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0195] For example, a light-emitting device can have a configuration that includes one or more layers from among a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0196] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0197] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0198] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having an electron mobility of 1 / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds, which are materials with high electron transport capabilities.

[0199] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0200] Examples of electron injection layers include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-(quinolinolato)lithium (abbreviated as Liq), 2-(2-pyridyl)phenolate (abbreviated as LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl)phenolate (abbreviated as LiPPP), and lithium oxide (LiO2). x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may be a multilayer structure of two or more layers. For example, this multilayer structure may consist of lithium fluoride as the first layer and ytterbium as the second layer.

[0201] Alternatively, an electron-transporting material may be used as the electron injection layer described above. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0202] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In general, the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound can be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0203] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. Compared to BPhen, NBPhen has a higher glass transition temperature (Tg) and superior heat resistance.

[0204] The luminescent layer is a layer containing a luminescent material. The luminescent layer may contain one or more types of luminescent materials. Suitable luminescent materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as luminescent materials.

[0205] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0206] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0207] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0208] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more of these organic compounds may be hole-transporting materials and / or electron-transporting materials. Alternatively, one or more of these organic compounds may be bipolar materials or TADF materials.

[0209] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0210] [Light receiving device] The active layer of a light-receiving device includes a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed using the same method (for example, vacuum deposition), and the manufacturing equipment can be shared.

[0211] As materials for the n-type semiconductor in the active layer, electron-accepting organic semiconductor materials such as fullerenes (e.g., C 60 , C 70 , etc.), fullerene derivatives, etc. can be mentioned. Fullerenes have a shape like a soccer ball, and this shape is energetically stable. Fullerenes have both deep (low) HOMO levels and LUMO levels. Since fullerenes have deep LUMO levels, they have extremely high electron-accepting (acceptor) properties. Usually, like benzene, when π-electron conjugation (resonance) spreads in a plane, the electron-donating (donor) property increases. However, because fullerenes have a spherical shape, despite the large spread of π-electron conjugation, they have high electron-accepting properties. High electron-accepting properties are beneficial for light-receiving devices because they cause charge separation to occur quickly and efficiently. C 60 , C 70 both have broad absorption bands in the visible light region. In particular, C 70 is preferable because it has a larger π-electron conjugation system than C 60 and also has a broad absorption band in the long wavelength region. In addition, examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), 1’,1’’,4’,4’’-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2’,3’,56,60:2’’,3’’][5,6]fullerene-C60 (abbreviation: ICBA), etc.

[0212] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0213] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0214] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indrocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0215] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than that of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than that of electron-accepting organic semiconductor materials.

[0216] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0217] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0218] The photodetector may further include layers other than the active layer, such as a material with high hole transport properties, a material with high electron transport properties, or a bipolar material (a material with high electron and hole transport properties). Furthermore, it may also further include layers containing a material with high hole injection properties, a hole blocking material, a material with high electron injection properties, an electron blocking material, etc.

[0219] The light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0220] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0221] Furthermore, the active layer can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0222] Furthermore, the active layer may contain a mixture of three or more materials. For example, to broaden the wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0223] The above is a description of the light-receiving device.

[0224] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0225] (Embodiment 4) This embodiment describes an example of a light-emitting device or a display device configuration that can be used as a display device according to one aspect of the present invention.

[0226] One aspect of the present invention is a display device having a light-emitting device and a light-receiving device. For example, a full-color display device can be realized by having three types of light-emitting devices that emit red (R), green (G), or blue (B) light, respectively.

[0227] One aspect of the present invention involves processing EL layers into fine patterns using photolithography without using shadow masks such as metal masks, and between EL layers and the active layer. This makes it possible to realize a display device with high resolution and a large aperture ratio, which has been difficult to achieve until now. Furthermore, because the EL layers can be differentiated, it is possible to realize a display device with extremely vivid colors, high contrast, and high display quality.

[0228] While it is difficult to reduce the spacing between different colored EL layers, or between the EL layer and the active layer, to less than 10 μm using a metal mask formation method, the above method allows for narrowing the spacing to 3 μm or less, 2 μm or less, or even 1 μm or less. For example, by using an exposure apparatus for LSIs, the spacing can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, and even 50 nm or less. This significantly reduces the area of ​​non-emitting regions that may exist between two light-emitting devices or between a light-emitting device and a photodetector, making it possible to approach a 100% aperture ratio. For example, aperture ratios of 50% or more, 60% or more, 70% or more, 80% or more, and even 90% or more, can be achieved, and even less than 100%.

[0229] Furthermore, the patterns of the EL layer and the active layer themselves can be made significantly smaller compared to when a metal mask is used. Also, for example, when a metal mask is used to create different EL layers, variations in thickness occur between the center and edges of the pattern, resulting in a smaller effective area that can be used as an luminescent region relative to the total area of ​​the pattern. On the other hand, in the above manufacturing method, the pattern is formed by processing a film deposited to a uniform thickness, so the thickness can be made uniform within the pattern, and even with a fine pattern, almost the entire area can be used as an luminescent region. Therefore, the above manufacturing method can achieve both high resolution and a high aperture ratio.

[0230] Organic films formed using FMM (Fine Metal Mask) often have an extremely small taper angle (for example, greater than 0 degrees and less than 30 degrees), with the thickness decreasing towards the edges. Therefore, it is difficult to clearly identify the sides of an organic film formed using FMM, as the sides and top surfaces are continuously connected. On the other hand, one embodiment of the present invention has an EL layer processed without using FMM, and thus has clearly defined sides. In particular, one embodiment of the present invention preferably has a portion of the EL layer with a taper angle of 30 degrees or more and 120 degrees or less, preferably 60 degrees or more and 120 degrees or less.

[0231] In this specification, an object is described as having a tapered end if the angle between the side surface (front) and the bottom surface (surface to be formed) in the end region is greater than 0 degrees and less than 90 degrees, and the cross-sectional shape has a continuous increase in thickness from the end. The taper angle is the angle between the bottom surface (surface to be formed) and the side surface (front) at the end of the object.

[0232] The following provides more specific examples.

[0233] Figure 13A shows a schematic top view of the display device 100. The display device 100 has multiple red light-emitting devices 90R, green light-emitting devices 90G, blue light-emitting devices 90B, and light-receiving devices 90S. In Figure 13A, the labels R, G, B, and S are added within the light-emitting area of ​​each light-emitting device or light-receiving device to simplify the distinction between them.

[0234] The light-emitting devices 90R, 90G, 90B, and 90S are each arranged in a matrix. Figure 13A shows a configuration in which two elements are arranged alternately in one direction. Note that the arrangement method of the light-emitting devices is not limited to this, and other arrangement methods such as stripe arrangement, S-stripe arrangement, delta arrangement, Bayer arrangement, and zigzag arrangement may be applied, or a pentile arrangement or diamond arrangement may be used.

[0235] Figure 13A also shows a connecting electrode 111C that is electrically connected to the common electrode 113. The connecting electrode 111C is supplied with a potential (e.g., anode potential or cathode potential) to the common electrode 113. The connecting electrode 111C is located outside the display area where the light-emitting devices 90R and the like are arranged. The common electrode 113 is also shown with a dashed line in Figure 13A.

[0236] The connecting electrode 111C can be provided along the outer perimeter of the display area. For example, it may be provided along one side of the outer perimeter of the display area, or it may be provided across two or more sides of the outer perimeter of the display area. That is, if the top surface shape of the display area is rectangular, the top surface shape of the connecting electrode 111C can be a strip, L-shape, U-shape (angle bracket shape), or square, etc.

[0237] Figure 13B is a schematic cross-sectional view corresponding to the dashed lines A1-A2 and C1-C2 in Figure 13A. Figure 13B shows schematic cross-sectional views of the light-emitting device 90B, light-emitting device 90R, light-receiving device 90S, and connecting electrode 111C.

[0238] Note that the light-emitting device 90G, which is not shown in the cross-sectional schematic diagram, can have the same configuration as light-emitting device 90B or light-emitting device 90R, and the descriptions of these devices can be used as references thereafter.

[0239] The light-emitting device 90B has a pixel electrode 111, an organic layer 112B, an organic layer 114, and a common electrode 113. The light-emitting device 90R has a pixel electrode 111, an organic layer 112R, an organic layer 114, and a common electrode 113. The light-receiving device 90S has a pixel electrode 111, an organic layer 115, an organic layer 114, and a common electrode 113. The organic layer 114 and the common electrode 113 are provided in common to the light-emitting devices 90B, 90R, and 90S. The organic layer 114 can also be called a common layer. The pixel electrodes 111 are spaced apart from each other between each light-emitting device and between a light-emitting device and a light-receiving device.

[0240] Organic layer 112R has a luminescent organic compound that emits light having a peak in at least the red wavelength range. Organic layer 112B has a luminescent organic compound that emits light having a peak in at least the blue wavelength range. Organic layer 115 has a photoelectric conversion material that is sensitive to visible light or infrared light wavelengths. Organic layer 112R and organic layer 112B can also be called EL layers.

[0241] Organic layer 112R, organic layer 112B, and organic layer 115 may each have one or more of the following: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. Organic layer 114 may have a configuration without an emissive layer. For example, organic layer 114 may have one or more of the following: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

[0242] In this case, it is preferable that the uppermost layer in the laminated structure of organic layer 112R, organic layer 112B, and organic layer 115, i.e., the layer in contact with organic layer 114, is a layer other than the light-emitting layer. For example, it is preferable to cover the light-emitting layer with an electron injection layer, electron transport layer, hole injection layer, hole transport layer, or other layer, and to have this layer in contact with organic layer 114. In this way, the reliability of the light-emitting device can be improved by protecting the upper surface of the light-emitting layer with another layer when manufacturing each light-emitting device.

[0243] Each pixel electrode 111 is provided for each element. The common electrode 113 and the organic layer 114 are provided as a continuous layer common to each light-emitting device. A conductive film that is transparent to visible light is used on either each pixel electrode or the common electrode 113, and a conductive film that is reflective is used on the other. By making each pixel electrode transparent and the common electrode 113 reflective, a bottom-emission type display device can be made. Conversely, by making each pixel electrode reflective and the common electrode 113 transparent, a top-emission type display device can be made. Furthermore, by making both each pixel electrode and the common electrode 113 transparent, a dual-emission type display device can be made.

[0244] An insulating layer 131 is provided covering the end of the pixel electrode 111. Preferably, the end of the insulating layer 131 is tapered. In this specification, etc., a tapered end of an object means that in the region of that end, the angle between the surface and the surface to be formed is greater than 0 degrees and less than 90 degrees, and the cross-sectional shape has such that the thickness increases continuously from the end.

[0245] Furthermore, by using an organic resin for the insulating layer 131, its surface can be made gently curved. This improves the coverage of the film formed on the insulating layer 131.

[0246] Examples of materials that can be used for the insulating layer 131 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0247] Alternatively, an inorganic insulating material may be used as the insulating layer 131. Examples of inorganic insulating materials that can be used for the insulating layer 131 include oxide or nitride films such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, aluminum oxide, aluminum oxide nitride, or hafnium oxide. In addition, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may also be used.

[0248] As shown in Figure 13B, the two organic layers are spaced apart between light-emitting devices of different colors, and between light-emitting devices and light-receiving devices, with gaps between them. It is preferable that the organic layers 112R, 112B, and 115 are arranged so that they do not touch each other. This effectively prevents current from flowing through two adjacent organic layers, thus preventing unintended light emission. Therefore, contrast can be enhanced, and a display device with high display quality can be realized.

[0249] Organic layer 112R, organic layer 112B, and organic layer 115 preferably have a taper angle of 30 degrees or more. Organic layer 112R, organic layer 112G, and organic layer 112B preferably have an angle between the side surface (front) and the bottom surface (formed surface) at the end of 30 degrees or more and 120 degrees or less, preferably 45 degrees or more and 120 degrees or less, and more preferably 60 degrees or more and 120 degrees or less. Alternatively, organic layer 112R, organic layer 112G, and organic layer 112B preferably have a taper angle of 90 degrees or near that (for example, 80 degrees or more and 100 degrees or less).

[0250] A protective layer 121 is provided on the common electrode 113. The protective layer 121 has the function of preventing impurities such as water from diffusing to each light-emitting device from above.

[0251] The protective layer 121 can be, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film. Alternatively, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide may be used as the protective layer 121.

[0252] Furthermore, a laminated film of an inorganic insulating film and an organic insulating film can also be used as the protective layer 121. For example, it is preferable to have a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films. It is also preferable that the organic insulating film functions as a planarizing film. This makes the upper surface of the organic insulating film flat, thereby improving the coverage of the inorganic insulating film on top of it and enhancing its barrier properties. In addition, since the upper surface of the protective layer 121 is flat, it is preferable because it reduces the influence of uneven shapes caused by the structure below when a structure (e.g., a color filter, touch sensor electrodes, or lens array) is provided above the protective layer 121.

[0253] In the connection portion 130, a common electrode 113 is provided in contact with the connecting electrode 111C, and a protective layer 121 is provided covering the common electrode 113. In addition, an insulating layer 131 is provided covering the end of the connecting electrode 111C.

[0254] The following describes an example of a display device configuration that differs in some aspects from Figure 13B. Specifically, an example is shown in which the insulating layer 131 is not provided.

[0255] Figures 14A to 14C show examples where the side surface of the pixel electrode 111 is roughly aligned with the side surface of the organic layer 112R, organic layer 112B, or organic layer 115.

[0256] In Figure 14A, the organic layer 114 is provided covering the top and side surfaces of organic layers 112R, 112B, and 115. The organic layer 114 prevents the pixel electrode 111 and the common electrode 113 from coming into contact and causing an electrical short circuit.

[0257] Figure 14B shows an example having organic layers 112R, 112G, and 112B, as well as an insulating layer 125 provided in contact with the side surface of the pixel electrode 111. The insulating layer 125 can effectively suppress electrical short circuits between the pixel electrode 111 and the common electrode 113, and leakage current between them.

[0258] The insulating layer 125 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 125. The insulating layer 125 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxidative nitride films and aluminum oxidative nitride films. Examples of nitride oxide insulating films include silicon nitride oxide films and aluminum nitride oxide films. In particular, by applying inorganic insulating films such as aluminum oxide films, hafnium oxide films, and silicon oxide films formed by the ALD method to the insulating layer 125, an insulating layer 125 can be formed that has few pinholes and excellent function in protecting the organic layer.

[0259] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0260] The insulating layer 125 can be formed using sputtering, CVD, PLD, ALD, or other methods. It is preferable to form the insulating layer 125 using the ALD method, which provides good coverage.

[0261] In Figure 14C, a resin layer 126 is provided between two adjacent light-emitting devices or between a light-emitting device and a light-receiving device, filling the gap between two opposing pixel electrodes and the gap between two opposing organic layers. The resin layer 126 flattens the surfaces to be formed, such as the organic layer 114 and the common electrode 113, thereby preventing the common electrode 113 from breaking due to poor coating of the step difference between adjacent light-emitting devices.

[0262] As the resin layer 126, an insulating layer having an organic material can be suitably used. For example, as the resin layer 126, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be applied. Alternatively, as the resin layer 126, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used. Furthermore, a photosensitive resin can be used as the resin layer 126. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0263] Furthermore, it is preferable to use a material that absorbs visible light as the resin layer 126. By using a material that absorbs visible light for the resin layer 126, the light emitted from the EL layer can be absorbed by the resin layer 126, blocking stray light from adjacent pixels and suppressing color mixing. Therefore, a display device with high display quality can be provided.

[0264] In Figure 14D, an insulating layer 125 and a resin layer 126 are provided on the insulating layer 125. Because the insulating layer 125 prevents the organic layer 112R and the resin layer 126 from coming into contact, impurities such as moisture contained in the resin layer 126 can be prevented from diffusing into the organic layer 112R, resulting in a highly reliable display device.

[0265] Furthermore, a mechanism may be provided to improve light extraction efficiency by providing a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum) between the insulating layer 125 and the resin layer 126, and reflecting the light emitted from the light-emitting layer with the reflective film.

[0266] Figures 15A to 15C show examples where the width of the pixel electrode 111 is greater than the width of the organic layer 112R, organic layer 112B, or organic layer 115. The organic layer 112R, etc., is located inside the edge of the pixel electrode 111.

[0267] Figure 15A shows an example where an insulating layer 125 is present. The insulating layer 125 is provided to cover the sides of the organic layer of the light-emitting device or light-receiving device, and a portion of the upper surface and sides of the pixel electrode 111.

[0268] Figure 15B shows an example in which a resin layer 126 is present. The resin layer 126 is located between two adjacent light-emitting devices or between a light-emitting device and a light-receiving device, and covers the sides of the organic layer and the top and sides of the pixel electrode 111.

[0269] FIG. 15C shows an example in the case of having both the insulating layer 125 and the resin layer 126. An insulating layer 125 is provided between the organic layer 112R or the like and the resin layer 126.

[0270] FIGS. 16A to 16D show examples in the case where the width of the pixel electrode 111 is smaller than the width of the organic layer 112R, the organic layer 112B, or the organic layer 115. The organic layer 112R or the like extends outward beyond the end of the pixel electrode 111.

[0271] FIG. 16B shows an example having the insulating layer 125. The insulating layer 125 is provided in contact with the side surfaces of the organic layers of two adjacent light-emitting devices. Note that the insulating layer 125 may be provided not only covering the side surfaces of the organic layer 112R or the like but also covering a part of the upper surface.

[0272] FIG. 16C shows an example having the resin layer 126. The resin layer 126 is located between two adjacent light-emitting devices and is provided covering the side surfaces and a part of the upper surface of the organic layer 112R or the like. Note that the resin layer 126 may be configured to be in contact with the side surfaces of the organic layer 112R or the like and not cover the upper surface.

[0273] FIG. 16D shows an example in the case of having both the insulating layer 125 and the resin layer 126. An insulating layer 125 is provided between the organic layer 112R or the like and the resin layer 126.

[0274] Here, a configuration example of the resin layer 126 will be described.

[0275] The upper surface of the resin layer 126 is preferably as flat as possible, but depending on the concavo-convex shape of the surface to be formed of the resin layer 126, the formation conditions of the resin layer 126, etc., the surface of the resin layer 126 may be in a concave or convex shape.

[0276] FIGS. 17A to 18F show enlarged views of the ends of the pixel electrode 111R included in the light-emitting device 90R, the ends of the pixel electrode 111G included in the light-emitting device 90G, and the vicinity thereof. An organic layer 112G is provided on the pixel electrode 111G.

[0277] In FIGS. 17A, 17B, and 17C, enlarged views of the resin layer 126 and its vicinity when the upper surface of the resin layer 126 is flat are shown. FIG. 17A is an example when the width of the organic layer 112R or the like is larger than that of the pixel electrode 111. FIG. 17B is an example when these widths are substantially the same. FIG. 17C is an example when the width of the organic layer 112R or the like is smaller than that of the pixel electrode 111.

[0278] As shown in FIG. 17A, since the organic layer 112R is provided to cover the end portion of the pixel electrode 111, the end portion of the pixel electrode 111 preferably has a tapered shape. Thereby, the step coverage of the organic layer 112R is improved, and a highly reliable display device can be obtained.

[0279] In FIGS. 17D, 17E, and 17F, examples when the upper surface of the resin layer 126 is concave are shown. At this time, concave portions reflecting the concave upper surface of the resin layer 126 are formed on the upper surfaces of the organic layer 114, the common electrode 113, and the protective layer 121.

[0280] In FIGS. 18A, 18B, and 18C, examples when the upper surface of the resin layer 126 is convex are shown. At this time, convex portions reflecting the convex upper surface of the resin layer 126 are formed on the upper surfaces of the organic layer 114, the common electrode 113, and the protective layer 121.

[0281] In FIGS. 18D, 18E, and 18F, examples when a part of the resin layer 126 covers the upper end portions and a part of the upper surfaces of the organic layer 112R and the organic layer 112G are shown. At this time, an insulating layer 125 is provided between the resin layer 126 and the upper surface of the organic layer 112R or the organic layer 112G.

[0282] Also, FIGS. 18D, 18E, and 18F show examples when a part of the upper surface of the resin layer 126 is concave. At this time, uneven shapes reflecting the shape of the resin layer 126 are formed on the organic layer 114, the common electrode 113, and the protective layer 121.

[0283] The above is an explanation of an example of the resin layer's composition.

[0284] Furthermore, a display device according to one aspect of the present invention may have a configuration without a light-receiving device, as shown in Figure 19A. If a light-receiving device is not provided, a capacitive sensor can be used instead as an input device. Capacitive sensors are commonly used as touch sensors, but they cannot capture images. However, they can read changes in capacitance due to the unevenness of fingerprints, so information about the fingerprint pattern can be obtained. As shown in Figure 19B, the capacitive sensor 150 can be mounted on top of each light-emitting device.

[0285] Furthermore, the configurations shown in Figures 14A to 18F can also be applied to display devices that do not include a light-receiving device.

[0286] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0287] (Embodiment 5) This embodiment describes an example of the configuration of a display device that can be used in a display device according to one aspect of the present invention. Here, it is described as a display device capable of displaying images, but it can be used as a display device by using a light-emitting device as a light source.

[0288] Furthermore, the display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, smartphones, smartwatches, tablet devices, personal digital assistants, and audio playback devices.

[0289] [Display device 400] Figure 20 shows a perspective view of the display device 400, and Figure 21A shows a cross-sectional view of the display device 400.

[0290] The display device 400 has a configuration in which substrate 452 and substrate 451 are bonded together. In Figure 20, substrate 452 is clearly indicated by a dashed line.

[0291] The display device 400 includes a display unit 462, a circuit 464, wiring 465, etc. Figure 20 shows an example in which IC 473 and FPC 472 are mounted on the display device 400. Therefore, the configuration shown in Figure 20 can also be described as a display module having the display device 400, an IC (integrated circuit), and an FPC.

[0292] For example, a scan line drive circuit can be used as circuit 464.

[0293] Wiring 465 has the function of supplying signals and power to the display unit 462 and the circuit 464. These signals and power are input to wiring 465 from an external source via FPC 472 or from IC 473.

[0294] Figure 20 shows an example in which IC 473 is provided on the substrate 451 using a COG (Chip On Glass) method or COF (Chip On Film) method. IC 473 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 400 and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using a COF method or the like.

[0295] Figure 21A shows an example of a cross-section of the display device 400 when a portion of the area including the FPC 472, a portion of the circuit 464, a portion of the display unit 462, and a portion of the area including the connection portion are cut. In Figure 21A, an example of a cross-section is shown when a portion of the display unit 462 is cut, specifically when a portion including the light-emitting device 430b that emits green light (G) and the light-receiving device 440 that receives reflected light (L) is cut.

[0296] The display device 400 shown in FIG. 21A has a transistor 252, a transistor 260, a transistor 258, a light-emitting device 430b, a light-receiving device 440, etc. between a substrate 453 and a substrate 454.

[0297] As the light-emitting device 430b and the light-receiving device 440, the light-emitting devices or light-receiving devices exemplified above can be applied.

[0298] Here, when a pixel of the display device has three sub-pixels each having a light-emitting device that emits different colors from each other, the three sub-pixels include three-color sub-pixels of red (R), green (G), and blue (B), and three-color sub-pixels of yellow (Y), cyan (C), and magenta (M). When the display device has four sub-pixels, the four sub-pixels include four-color sub-pixels of R, G, B, and white (W), and four-color sub-pixels of R, G, B, and Y. Alternatively, the sub-pixel may include a light-emitting device that emits infrared light.

[0299] As the light-receiving device 440, a photoelectric conversion element having sensitivity to light in the wavelength range of red, green, or blue, or a photoelectric conversion element having sensitivity to light in the infrared wavelength range can be used.

[0300] The substrate 454 and the protective layer 416 are adhered via an adhesive layer 442. The adhesive layer 442 is provided so as to overlap with each of the light-emitting device 430b and the light-receiving device 440, and a solid-sealing structure is applied to the display device 400. A light-shielding layer 417 is provided on the substrate 454.

[0301] The light-emitting device 430b and the light-receiving device 440 have a conductive layer 411a, a conductive layer 411b, and a conductive layer 411c as pixel electrodes. The conductive layer 411b has reflectivity to visible light and functions as a reflective electrode. The conductive layer 411c has transparency to visible light and functions as an optical adjustment layer.

[0302] The conductive layer 411a of the light-emitting device 430b is connected to the conductive layer 272b of the transistor 260 through an opening provided in the insulating layer 264. The transistor 260 has the function of controlling the driving of the light-emitting device. On the other hand, the conductive layer 411a of the light-receiving device 440 is electrically connected to the conductive layer 272b of the transistor 258. The transistor 258 has the function of controlling the exposure timing using the light-receiving device 440.

[0303] An EL layer 412G or a photoelectric conversion layer 412S is provided covering the pixel electrodes. An insulating layer 421 is provided in contact with the sides of the EL layer 412G and the photoelectric conversion layer 412S, and a resin layer 422 is provided to fill the recesses of the insulating layer 421. An organic layer 414, a common electrode 413, and a protective layer 416 are provided covering the EL layer 412G and the photoelectric conversion layer 412S. By providing a protective layer 416 that covers the light-emitting device, it is possible to suppress the ingress of impurities such as water into the light-emitting device and improve the reliability of the light-emitting device.

[0304] The light G emitted by the light-emitting device 430b is emitted towards the substrate 452. The light-receiving device 440 receives the light L incident through the substrate 452 and converts it into an electrical signal. It is preferable to use a material with high transmittance to visible light for the substrate 452.

[0305] Transistors 252, 260, and 258 are all formed on the substrate 451. These transistors can be manufactured using the same materials and processes.

[0306] Furthermore, transistors 252, 260, and 258 may be manufactured to have different configurations. For example, transistors may be manufactured with or without a back gate, or transistors may be manufactured with different materials or thicknesses for the semiconductor, gate electrode, gate insulating layer, source electrode, and drain electrode, or both.

[0307] The substrate 453 and the insulating layer 262 are bonded together by an adhesive layer 455.

[0308] The method for manufacturing the display device 400 involves first bonding a fabricated substrate, on which an insulating layer 262, transistors, light-emitting devices, light-receiving devices, etc., are provided, to a substrate 454 on which a light-shielding layer 417 is provided, using an adhesive layer 442. Then, the fabricated substrate is peeled off and a substrate 453 is attached to the exposed surface, thereby transferring the components formed on the fabricated substrate to the substrate 453. It is preferable that both the substrate 453 and the substrate 454 are flexible. This increases the flexibility of the display device 400.

[0309] A connection portion 254 is provided in the region of substrate 453 that does not overlap with substrate 454. At the connection portion 254, wiring 465 is electrically connected to FPC 472 via a conductive layer 466 and a connecting layer 292. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 254 and FPC 472 to be electrically connected via the connecting layer 292.

[0310] Transistors 252, 260, and 258 each have a conductive layer 271 that functions as a gate, an insulating layer 261 that functions as a gate insulating layer, a semiconductor layer 281 having a channel-forming region 281i and a pair of low-resistance regions 281n, a conductive layer 272a connected to one of the pair of low-resistance regions 281n, a conductive layer 272b connected to the other of the pair of low-resistance regions 281n, an insulating layer 275 that functions as a gate insulating layer, a conductive layer 273 that functions as a gate, and an insulating layer 265 covering the conductive layer 273. The insulating layer 261 is located between the conductive layer 271 and the channel-forming region 281i. The insulating layer 275 is located between the conductive layer 273 and the channel-forming region 281i.

[0311] The conductive layer 272a and the conductive layer 272b are each connected to the low-resistance region 281n via openings provided in the insulating layer 265. Of the conductive layer 272a and the conductive layer 272b, one functions as a source and the other functions as a drain.

[0312] Figure 21A shows an example in which the insulating layer 275 covers the top and sides of the semiconductor layer. The conductive layer 272a and conductive layer 272b are connected to the low-resistance region 281n through openings provided in the insulating layer 275 and insulating layer 265, respectively.

[0313] On the other hand, in the transistor 259 shown in Figure 21B, the insulating layer 275 overlaps with the channel formation region 281i of the semiconductor layer 281, but does not overlap with the low-resistance region 281n. For example, the structure shown in Figure 21B can be fabricated by processing the insulating layer 275 using the conductive layer 273 as a mask. In Figure 21B, an insulating layer 265 is provided covering the insulating layer 275 and the conductive layer 273, and the conductive layers 272a and 272b are connected to the low-resistance region 281n, respectively, through openings in the insulating layer 265. Furthermore, an insulating layer 268 covering the transistor may also be provided.

[0314] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0315] Transistors 252, 260, and 258 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other.

[0316] The crystallinity of the semiconductor material used in the semiconductor layer of the transistor is not particularly limited; amorphous semiconductors, single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors having crystalline regions in part) may be used. Using a single-crystal semiconductor or a semiconductor with crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0317] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0318] The band gap of the metal oxide used in the semiconductor layer of the transistor is preferably 2 eV or more, and more preferably 2.5 eV or more. By using a metal oxide with a large band gap, the off-current of the OS transistor can be reduced. For example, the off-current value of an OS transistor per 1 μm of channel width at room temperature is 1 aA (1 × 10⁻¹⁶). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0319] The metal oxide preferably contains at least indium or zinc, and more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and gallium is more preferred. A metal oxide containing indium, M, and zinc may hereafter be referred to as In-M-Zn oxide.

[0320] When the metal oxide is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is equal to or greater than the atomic ratio of M. Examples of such In-M-Zn oxide atomic ratios of metal elements include compositions where In:M:Zn=1:1:1 or close to it, In:M:Zn=1:1:1.2 or close to it, In:M:Zn=2:1:3 or close to it, In:M:Zn=3:1:2 or close to it, In:M:Zn=4:2:3 or close to it, In:M:Zn=4:2:4.1 or close to it, In:M:Zn=5:1:3 or close to it, In:M:Zn=5:1:6 or close to it, In:M:Zn=5:1:7 or close to it, In:M:Zn=5:1:8 or close to it, In:M:Zn=6:1:6 or close to it, In:M:Zn=5:2:5 or close to it, and so on. Note that "close to it" compositions include a range of ±30% of the desired atomic ratio. By increasing the atomic ratio of indium in a metal oxide, the on-current or field-effect mobility of a transistor can be increased.

[0321] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0322] Furthermore, the atomic ratio of In in an In-M-Zn oxide may be less than the atomic ratio of M. Examples of such atomic ratios of metal elements in an In-M-Zn oxide include compositions where In:M:Zn = 1:3:2 or close to it, In:M:Zn = 1:3:3 or close to it, In:M:Zn = 1:3:4 or close to it, etc. By increasing the atomic ratio of M in the metal oxide, it is possible to increase the band gap of the In-M-Zn oxide and improve its resistance to photo-negative bias stress testing. Specifically, it is possible to reduce the change in threshold voltage or the change in shift voltage (Vsh) measured in the NBTIS (Negative Bias Temperature Illumination Stress) test of a transistor. Note that the shift voltage (Vsh) is defined as the Vg at which the tangent line at the point where the slope of the drain current (Id)-gate voltage (Vg) curve is maximum intersects the straight line where Id = 1 pA.

[0323] By configuring the display device to have OS transistors and light-emitting devices with an MML (metal maskless) structure, the leakage current that can flow through the transistors and the leakage current that can flow between adjacent light-emitting elements (also called lateral leakage current or side leakage current) can be made extremely low. Furthermore, with this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, high saturation, and high contrast ratio. Moreover, by configuring the device to have extremely low leakage currents that can flow through the transistors and lateral leakage currents between light-emitting elements, it is possible to achieve a display (also called true black display) with virtually no light leakage (so-called white floating) that can occur when displaying black.

[0324] In particular, among light-emitting devices with an MML structure, applying the SBS structure described above results in a configuration where the layer provided between light-emitting elements (for example, an organic layer used in common between light-emitting elements, also called a common layer) is separated, making it possible to achieve a display with no side leakage or extremely low side leakage.

[0325] Furthermore, to increase the luminescence brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, so a higher voltage can be applied between the source and drain of an OS transistor. As a result, by using an OS transistor as the drive transistor in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the light-emitting device.

[0326] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby controlling the amount of current flowing to the light-emitting device. This allows for a wider range of tonal gradations in the pixel circuit.

[0327] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using OS transistors as driving transistors, for example, a stable current can be supplied to a light-emitting device even if there are variations in the current-voltage characteristics of the light-emitting device containing EL material. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0328] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices."

[0329] Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single-crystal silicon).

[0330] Low-temperature polysilicon, in particular, has relatively high mobility and can be formed on a glass substrate, making it suitable for use in display devices. For example, transistors using low-temperature polysilicon as the semiconductor layer can be applied to transistors 252 in the drive circuit, and transistors using oxide semiconductors as the semiconductor layer can be applied to transistors 260 and 258 provided in the pixels.

[0331] Alternatively, the semiconductor layer of a transistor may have a layered material that functions as a semiconductor. A layered material is a general term for a group of materials having a layered crystalline structure. A layered crystalline structure is a structure in which layers formed by covalent or ionic bonds are stacked via weaker bonds than covalent or ionic bonds, such as van der Waals forces. Layered materials have high electrical conductivity within a unit layer, that is, high two-dimensional electrical conductivity. By using a material that functions as a semiconductor and has high two-dimensional electrical conductivity in the channel formation region, a transistor with a large on-current can be provided.

[0332] Examples of the above-mentioned layered materials include graphene, silicene, and chalcogenides. Chalcogenides are compounds containing chalcogens (elements belonging to Group 16). Examples of chalcogenides include transition metal chalcogenides and Group 13 chalcogenides. Specific examples of transition metal chalcogenides applicable as semiconductor layers in transistors include molybdenum sulfide (typically MoS2), molybdenum selenide (typically MoSe2), molybdenum tellurium (typically MoTe2), tungsten sulfide (typically WS2), tungsten selenide (typically WSe2), tungsten tellurium (typically WTe2), hafnium sulfide (typically HfS2), hafnium selenide (typically HfSe2), zirconium sulfide (typically ZrS2), and zirconium selenide (typically ZrSe2).

[0333] The transistors in circuit 464 and the transistors in display unit 462 may have the same structure or different structures. The structures of the multiple transistors in circuit 464 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 462 may all be the same or there may be two or more different structures.

[0334] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0335] It is preferable to use an inorganic insulating film for insulating layers 261, 262, 265, 268, and 275. Examples of inorganic insulating films that can be used include silicon nitride, silicon oxide nitride, silicon oxide, silicon nitride, aluminum oxide, and aluminum nitride. Alternatively, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may also be used. Furthermore, two or more of the above-mentioned inorganic insulating films may be laminated together.

[0336] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 400. This prevents impurities from entering through the organic insulating film from the edge of the display device 400. Alternatively, the organic insulating film may be formed so that its edge is inside the edge of the display device 400, so that the organic insulating film is not exposed at the edge of the display device 400.

[0337] An organic insulating film is preferred for the insulating layer 264, which functions as a planarizing layer. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0338] It is preferable to provide a light-shielding layer 417 on the surface of the substrate 454 that faces the substrate 453. Various optical components can also be arranged on the outside of the substrate 454. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be arranged on the outside of the substrate 454.

[0339] Figure 21A shows the connection section 278. At the connection section 278, the common electrode 413 and the wiring are electrically connected. Figure 21A shows an example where the same stacked structure as the pixel electrode is applied to the wiring.

[0340] Substrates 453 and 454 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc., respectively. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. Using flexible materials for substrates 453 and 454 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as substrate 453 or substrate 454.

[0341] Substrates 453 and 454 can be made from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 453 and 454 may be made of glass of a thickness sufficient to provide flexibility.

[0342] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0343] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0344] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic resin film.

[0345] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0346] Various types of curing adhesives can be used as the adhesive layer, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0347] As the connecting layer 292, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0348] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0349] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used as conductive layers for various wirings and electrodes that constitute a display device, and as conductive layers (conductive layers that function as pixel electrodes or common electrodes) in light-emitting devices.

[0350] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0351] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0352] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0353] (Embodiment 6) This embodiment describes an example of a display device having a light-receiving device, etc., according to one aspect of the present invention.

[0354] In the display device of this embodiment, each pixel can be configured to have multiple subpixels, each having a light-emitting device that emits a different color from the others. For example, a pixel can be configured to have three types of subpixels. Examples of these three subpixels include subpixels of three colors: red (R), green (G), and blue (B); or subpixels of three colors: yellow (Y), cyan (C), and magenta (M). Alternatively, a pixel can be configured to have four types of subpixels. Examples of these four subpixels include subpixels of four colors: red, green, blue, and white (W); or subpixels of four colors: red, green, blue, and yellow.

[0355] There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0356] Furthermore, the top surface shape of a sub-pixel can be, for example, a polygon such as a triangle, quadrilateral (including rectangles and squares), or pentagon, or a polygon with rounded corners, or an ellipse or a circle. The top surface shape of a sub-pixel referred to here corresponds to the top surface shape of the light-emitting area of ​​a light-emitting device.

[0357] In a display device having light-emitting and light-receiving devices in its pixels, the pixels have a light-receiving function, allowing for the detection of contact or proximity of an object while displaying an image. For example, not only can the display device display an image using all of its subpixels, but some subpixels can also emit light as a light source while the remaining subpixels display an image.

[0358] The pixels shown in Figures 22A, 22B, and 22C have sub-pixels G, B, R, and PS.

[0359] The pixels shown in Figure 22A have a stripe array applied. The pixels shown in Figure 22B have a matrix array applied.

[0360] The pixel arrangement shown in Figure 22C has a configuration in which three subpixels (subpixel R, subpixel G, and subpixel S) are arranged vertically next to one subpixel (subpixel B).

[0361] The pixels shown in Figures 22D, 22E, and 22F have sub-pixels G, B, R, IR, and PS.

[0362] Figures 22D, 22E, and 22F show examples where a single pixel spans two rows. The upper row (first row) has three subpixels (subpixel G, subpixel B, and subpixel R), while the lower row (second row) has two subpixels (one subpixel PS and one subpixel IR).

[0363] Figure 22D shows a configuration where three vertically elongated subpixels G, B, and R are arranged horizontally, with a subpixel PS and a horizontally elongated subpixel IR arranged horizontally below them. Figure 22E shows a configuration where two horizontally elongated subpixels G and R are arranged vertically, with a vertically elongated subpixel B next to them, and a horizontally elongated subpixel IR and a vertically elongated subpixel PS arranged horizontally below them. Figure 22F shows a configuration where three vertically elongated subpixels R, G, and B are arranged horizontally, with a horizontally elongated subpixel IR and a vertically elongated subpixel PS arranged horizontally below them. Figures 22E and 22F show the case where the area of ​​subpixel IR is the largest, and the area of ​​subpixel PS is about the same as that of the subpixels.

[0364] Note that the layout of the subpixels is not limited to the configuration shown in Figures 22A to 22F.

[0365] Sub-pixel R has a light-emitting device that emits red light. Sub-pixel G has a light-emitting device that emits green light. Sub-pixel B has a light-emitting device that emits blue light. Sub-pixel IR has a light-emitting device that emits infrared light. Sub-pixel PS has a light-receiving device. The wavelength of light detected by sub-pixel PS is not particularly limited, but it is preferable that the light-receiving device of sub-pixel PS is sensitive to the light emitted by the light-emitting devices of sub-pixel R, sub-pixel G, sub-pixel B, or sub-pixel IR. For example, it is preferable to detect one or more of the wavelengths of light in the blue, violet, blue-violet, green, yellow-green, yellow, orange, and red ranges, and the infrared wavelength range.

[0366] The light-receiving area of ​​a sub-pixel PS is smaller than the light-emitting area of ​​other sub-pixels. A smaller light-receiving area results in a narrower imaging range, which helps suppress blurring in the image and improves resolution. Therefore, using sub-pixel PS enables high-definition or high-resolution imaging. For example, sub-pixel PS can be used to capture images for personal authentication, such as fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0367] Furthermore, the sub-pixel PS can be used in touch sensors (also called direct touch sensors) or near-touch sensors (also called hover sensors, hover-touch sensors, non-contact sensors, or touchless sensors). For example, it is preferable for the sub-pixel PS to detect infrared light. This enables touch detection even in dark places.

[0368] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when it comes into direct contact with the display device. A near-touch sensor can detect an object even if it does not come into contact with the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. This configuration makes it possible to operate the display device without the object directly touching it, in other words, it becomes possible to operate the display device without contact (touchless). This configuration reduces the risk of the display device becoming dirty or scratched, or makes it possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0369] Furthermore, in order to perform high-resolution imaging, it is preferable that sub-pixels PS be provided on all pixels of the display device. On the other hand, when sub-pixels PS are used in touch sensors or near-touch sensors, the accuracy required is not as high as when capturing fingerprints, so it is sufficient to provide them on only some of the pixels of the display device. The detection speed can be increased by reducing the number of sub-pixels PS in the display device to fewer than the number of sub-pixels R, etc.

[0370] Furthermore, the display device may have a function to vary the refresh rate. For example, the refresh rate can be adjusted according to the content displayed on the display device (for example, within a range of 0.01 Hz to 240 Hz) to reduce power consumption. Also, a drive that reduces the power consumption of the display device by driving with a reduced refresh rate may be called an idling stop (IDS) drive.

[0371] Furthermore, the drive frequency of the touch sensor or near-touch sensor may be changed according to the refresh rate mentioned above. For example, if the refresh rate of the display device is 120Hz, the drive frequency of the touch sensor or near-touch sensor can be set to a frequency higher than 120Hz (typically 240Hz). This configuration enables low power consumption and increases the response speed of the touch sensor or near-touch sensor.

[0372] Figure 22G shows an example of a pixel circuit for a subpixel having a light-receiving device, and Figure 22H shows an example of a pixel circuit for a subpixel having a light-emitting device.

[0373] The pixel circuit PIX1 shown in Figure 22G includes a light-receiving device PD, transistors M11, M12, M13, M14, and a capacitive element C2. Here, an example is shown in which a photodiode is used as the light-receiving device PD.

[0374] The light-receiving device PD has its anode electrically connected to wiring V1 and its cathode electrically connected to either the source or drain of transistor M11. Alternatively, the cathode may be electrically connected to wiring V1 and the anode electrically connected to either the source or drain of transistor M11. Transistor M11 has its gate electrically connected to wiring TX and its other source or drain electrically connected to one electrode of capacitive element C2, one source or drain of transistor M12, and the gate of transistor M13. Transistor M12 has its gate electrically connected to wiring RES and its other source or drain electrically connected to wiring V2. Transistor M13 has its source or drain electrically connected to wiring V3 and its other source or drain electrically connected to either the source or drain of transistor M14. Transistor M14 has its gate electrically connected to wiring SE and its other source or drain electrically connected to wiring OUT1.

[0375] A constant potential is supplied to wiring V1, wiring V2, and wiring V3, respectively. When the anode of the photodetector PD is electrically connected to wiring V1, and the photodetector PD is driven with reverse bias, a potential higher than that of wiring V1 is supplied to wiring V2. When the cathode of the photodetector PD is electrically connected to wiring V1, and the photodetector PD is driven with reverse bias, a potential higher than that of wiring V2 is supplied to wiring V1.

[0376] Transistor M12 is controlled by a signal supplied to wiring RES and has the function of resetting the potential of the node connected to the gate of transistor M13 to the potential supplied to wiring V2. Transistor M11 is controlled by a signal supplied to wiring TX and has the function of controlling the timing at which the potential of the above node changes according to the current flowing through the photodetector PD. Transistor M13 functions as an amplifying transistor that provides an output according to the potential of the above node. Transistor M14 is controlled by a signal supplied to wiring SE and functions as a selection transistor for reading the output according to the potential of the above node by an external circuit connected to wiring OUT1.

[0377] The pixel circuit PIX2 shown in Figure 22H includes a light-emitting device EL, transistors M15, M16, M17, and a capacitive element C3. Here, an example using a light-emitting diode as the light-emitting device EL is shown. In particular, it is preferable to use an organic EL element as the light-emitting device EL.

[0378] Transistor M15 has its gate electrically connected to wiring VG, one of its source or drain electrically connected to wiring VS, and the other of its source or drain electrically connected to one electrode of capacitive element C3 and the gate of transistor M16. One of the source or drain of transistor M16 is electrically connected to wiring V4, and the other is electrically connected to the anode of light-emitting device EL and one of the source or drain of transistor M17. Transistor M17 has its gate electrically connected to wiring MS, and the other of its source or drain electrically connected to wiring OUT2. The cathode of light-emitting device EL is electrically connected to wiring V5.

[0379] Constant potentials are supplied to wirings V4 and V5, respectively. This allows the anode side of the light-emitting device EL to be at a high potential and the cathode side to be at a lower potential than the anode side. Transistor M15 is controlled by a signal supplied to wiring VG and functions as a selection transistor to control the selected state of the pixel circuit PIX2. Transistor M16 also functions as a drive transistor that controls the current flowing to the light-emitting device EL according to the potential supplied to its gate. When transistor M15 is conducting, the potential supplied to wiring VS is supplied to the gate of transistor M16, and the luminescence brightness of the light-emitting device EL can be controlled according to that potential. Transistor M17 is controlled by a signal supplied to wiring MS and has the function of outputting the potential between transistor M16 and the light-emitting device EL to the outside via wiring OUT2.

[0380] Here, it is preferable to apply transistors to which the semiconductor layer in which the channel is formed is made of a metal oxide (oxide semiconductor) for transistors M11, M12, M13, and M14 in the pixel circuit PIX1, and transistors M15, M16, and M17 in the pixel circuit PIX2.

[0381] Transistors using metal oxides, which have a wider bandgap and lower carrier density than silicon, can achieve extremely low off-currents. Therefore, this low off-current allows the charge accumulated in the capacitive element connected in series with the transistor to be retained for extended periods. For this reason, it is preferable to use transistors made of oxide semiconductors, particularly for transistors M11, M12, and M15 connected in series with capacitive element C2 or C3. Similarly, using oxide semiconductor transistors for other transistors can reduce manufacturing costs.

[0382] Furthermore, transistors M11 to M17 can also be transistors in which silicon is applied as the semiconductor in which the channel is formed. In particular, using highly crystalline silicon such as single-crystal silicon or polycrystalline silicon is preferable because it can achieve high field-effect mobility, enabling faster operation.

[0383] Alternatively, a configuration may be used in which one or more transistors among transistors M11 to M17 have oxide semiconductors applied, and the others have silicon applied.

[0384] Note that in Figures 22G and 22H, transistors are shown as n-channel transistors, but p-channel transistors can also be used.

[0385] It is preferable that the transistors in pixel circuit PIX1 and pixel circuit PIX2 be formed side by side on the same substrate. In particular, it is preferable to configure the transistors in pixel circuit PIX1 and pixel circuit PIX2 to be mixed within a single region and arranged periodically.

[0386] Furthermore, it is preferable to provide one or more layers having either or both transistors and / or capacitive elements in a position that overlaps with the light-receiving device PD or light-emitting device EL. This reduces the effective area occupied by each pixel circuit, enabling the realization of a high-definition light-receiving or display unit.

[0387] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part. [Explanation of symbols]

[0388] C2: Capacitive element, C3: Capacitive element, M11: Transistor, M12: Transistor, M13: Transistor, M14: Transistor, M15: Transistor, M16: Transistor, M17: Transistor, OUT1: Wiring, OUT2: Wiring, PD: Light receiving device, PIX1: Pixel circuit, PIX2: Pixel circuit, V1: Wiring, V2: Wiring, V3: Wiring, V4: Wiring, V5: Wiring, 30a: Electronic equipment, 30b: Electronic equipment, 31: Display unit, 32a: Housing, 32b: Housing, 33: Camera, 34: Microphone, 35: Push button, 36: Speaker, 37: Hinge jig, 38: Sensor, 41: Icon, 42: Clock, 43: Keyboard key, 45: Hand, 46: Stylus, 51: Shaft rod, 52: Shaft hole, 53: Locking part, 54: Hole, 55: Recess, 56: Ball, 57: Spring, 58: Circumference, 90B: Light-emitting device, 90G: Light-emitting device, 90R: Light-emitting device, 90S: Light-receiving device, 100: Display device, 111: Pixel electrode, 111C: Connection electrode, 111G: Pixel electrode, 111R: Pixel electrode, 112B: Organic layer, 112G: Organic layer, 112R: Organic layer, 113: Common electrode, 114: Organic layer, 115: Organic layer, 121: 125: Protective layer, 126: Insulating layer, 130: Connection part, 131: Insulating layer, 150: Capacitive sensor, 200: Display panel, 200A: Display panel, 200B: Display panel, 201: Substrate, 202: Substrate, 203: Functional layer, 211: Light-emitting device, 211B: Light-emitting device, 211G: Light-emitting device, 211IR: Light-emitting device, 211R: Light-emitting device, 211W: Light-emitting device, 211X: Light-emitting device, 212: Light-receiving device, 213R: Light-receiving / light-receiving device, 220: Finger, 221: Contact part, 222: Fingerprint, 223: Imaging area, 225: Stylus S, 226: Trajectory, 252: Transistor, 254: Connection, 258: Transistor, 259: Transistor, 260: Transistor, 261: Insulating layer, 262: Insulating layer, 264: Insulating layer, 265: Insulating layer, 268: Insulating layer, 271: Conductive layer, 272a: Conductive layer, 272b: Conductive layer, 273: Conductive layer, 275: Insulating layer, 278: Connection, 281: Semiconductor layer, 281i: Channel formation region, 281n: Low resistance region, 292: Connection layer, 400: Display device, 411a: Conductive layer, 411b: Conductive layer, 411c: Conductive layer, 412G: EL layer, 412S: Photoelectric conversion layer,413: Common electrode, 414: Organic layer, 416: Protective layer, 417: Light-shielding layer, 421: Insulating layer, 422: Resin layer, 430b: Light-emitting device, 440: Light-receiving device, 442: Adhesive layer, 451: Substrate, 452: Substrate, 453: Substrate, 454: Substrate, 455: Adhesive layer, 462: Display unit, 464: Circuit, 465: Wiring, 466: Conductive layer, 472: FPC, 473: IC, 711: Light-emitting layer, 712: Light-emitting layer, 713: Light-emitting layer, 720: Layer, 720-1: Layer, 720-2: Layer, 730: Layer, 730-1: Layer, 730-2: Layer, 750B: Light-emitting device, 750G: Light-emitting device, 750R: Light-emitting device, 751: Layer, 752: Layer, 753B: Light-emitting layer, 753G: Light-emitting layer, 753R: Light-emitting layer, 754: Layer, 755: Layer, 760: Light-receiving device, 761: Layer, 762: Layer, 763: Layer, 790: EL layer, 790a: EL layer, 790b: EL layer, 791: Lower electrode, 791B: Pixel electrode, 791G: Pixel electrode, 791PD: Pixel electrode, 791R: Pixel electrode, 792: Upper electrode, 795: Coloring layer,

Claims

1. An electronic device comprising a first housing, a second housing, a display device incorporated in the first housing and the second housing, and a hinge jig, The aforementioned display device has a flexible display section, The display unit has a function of displaying keyboard keys when the first housing and the second housing are at a certain angle. The hinge fixture has a first shaft hole, a second shaft hole, and a locking component. The locking component has a spring and a ball, The first housing has a first shaft, The second housing has a second shaft, Multiple recesses are provided near the first shaft and the second shaft. The first shaft is inserted into the first shaft hole. The second shaft is inserted into the second shaft hole. An electronic device having the function of fixing the angle by having the ball enter one of the plurality of recesses.

2. In Claim 1, The display unit includes a light-emitting device and a light-receiving device. The light-emitting device and the light-receiving device are arranged in close proximity. The display unit has the function of displaying the keyboard keys using a plurality of the light-emitting devices. A first string of characters is entered by a first touch operation of a finger on the aforementioned keyboard key. A plurality of light-receiving devices, located near the plurality of light-emitting devices that display the keyboard keys used when the first string was entered, capture images of the fingerprints of the fingers used in the first touch operation. An electronic device having a function to perform authentication by comparing the information of the first string and the fingerprint information of the finger used in the first touch operation with registered information.

Images