Semiconductor devices and electronic equipment

Abstract

The present technology relates to a semiconductor apparatus and an electronic device that facilitate calibration and make it possible to obtain good characteristics. The semiconductor apparatus comprises a substrate, a millimeter-wave antenna provided on the substrate, and an image sensor provided on the substrate. An antenna surface for the millimeter-wave antenna and a light-receiving surface for the image sensor are disposed at locations spatially partitioned from each other. The present technology may be applied to sensor modules.

Description

Technical Field

[0001] The present technology relates to semiconductor devices and electronic devices, and particularly to semiconductor devices and electronic devices that facilitate calibration and can obtain good characteristics.

Background Art

[0002] In recent years, an image sensor for taking images and a radar for sensing for measurement of position, speed, etc. may be used in combination. For example, a camera comprising an image sensor and a millimeter-wave radar are mounted on a vehicle as in-vehicle components.

[0003] Further, as a technology related to an image sensor, a technology has been proposed in which an image sensor and a wireless communication chip for communication with a mobile device are arranged adjacent to each other on a wafer, and the image sensor and the wireless communication chip are covered with a protective cover (see, for example, Patent Document 1). According to this technology, since the structure and the process are simplified, reduction of manufacturing costs and improvement of productivity can be realized.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in the above-described technology, when an image sensor and a radar are used in combination, it has been difficult to facilitate calibration and obtain good characteristics.

[0006] For example, radar and cameras in automotive components are generally located in separate positions. Therefore, depending on their mounting location, it is necessary to calibrate the relative positions of all these radars and cameras, and such calibration has been a cumbersome process.

[0007] In addition, if the vehicle comes into contact with something, the mounting positions of the various parts installed on the vehicle may shift, and if such a shift occurs, all calibrations must be redone. Furthermore, if the condition of the vehicle changes due to factors such as tire pressure or the number of passengers, the vehicle height and body distortion will also change, so it is preferable to perform calibrations at regular intervals.

[0008] Furthermore, in applications such as local 5G, when receiving radio waves from sensors using radar, interference or interruptions in radio waves can occur due to obstructions, requiring high-precision antenna steering.

[0009] For example, by analyzing images obtained from a camera to identify obstacles, it is possible to reduce unnecessary radio wave emission.

[0010] However, since cameras and radars are usually separate components, positional calibration needs to be performed for each individual unit. Therefore, as the number of locations where cameras and radars are installed increases, each unit requires calibration, which becomes cumbersome.

[0011] Furthermore, if a structure is adopted in which the camera and radar are placed adjacent to each other and covered with a protective cover, as in the technology described in Patent Document 1, for example, it is possible to easily perform positional calibration, but there is a risk that good characteristics cannot be obtained.

[0012] Specifically, in a structure like this, for example, the radio waves transmitted and received by the radar may directly enter the image sensor, or they may be scattered by protective covers, making it highly likely that noise will occur in the image obtained by the image sensor. In addition, the protective cover surrounding the radar may reduce the intensity of the radio waves transmitted and received by the radar.

[0013] This technology was developed in light of these circumstances, and aims to facilitate calibration and enable the acquisition of good characteristics. [Means for solving the problem]

[0014] The semiconductor device of the first aspect of this technology comprises a substrate, a millimeter-wave antenna provided on the substrate, and an image sensor provided on the substrate, wherein the antenna surface of the millimeter-wave antenna and the light-receiving surface of the image sensor are arranged in positions that are spatially separated.

[0015] In the first aspect of this technology, the antenna surface of the millimeter-wave antenna and the light-receiving surface of the image sensor are arranged in spatially separated positions on the substrate. Furthermore, the electronic device in the second aspect of this technology is an electronic device having the semiconductor device described in the first aspect of this technology. [Brief explanation of the drawing]

[0016] [Figure 1] This diagram shows an example of a sensor module configuration. [Figure 2] This figure shows other examples of sensor module configurations. [Figure 3] This figure shows other examples of sensor module configurations. [Figure 4] This figure shows other examples of sensor module configurations. [Figure 5] This figure shows other examples of sensor module configurations. [Figure 6] This figure shows other examples of sensor module configurations. [Figure 7]It is a diagram showing another example of an exposed portion provided in a frame member. [Figure 8] It is a diagram showing another example of an exposed portion provided in a frame member. [Figure 9] It is a diagram showing another configuration example of a sensor module. [Figure 10] It is a diagram showing another configuration example of a sensor module. [Figure 11] It is a diagram showing another configuration example of a sensor module. [Figure 12] It is a diagram showing another configuration example of a sensor module. [Figure 13] It is a diagram showing another arrangement example of a transmission antenna section and a reception antenna section. [Figure 14] It is a diagram showing a functional configuration example of a sensor module. [Figure 15] It is a diagram for explaining a manufacturing process. [Figure 16] It is a diagram for explaining a manufacturing process. [Figure 17] It is a diagram showing another configuration example of a sensor module. It is a diagram showing another configuration example of a bottom - lifted substrate. [Figure 19] It is a diagram showing another configuration example of a sensor module. [Figure 20] It is a diagram showing another configuration example of a sensor module. [Figure 21] It is a diagram showing another configuration example of a sensor module. [Figure 22] It is a diagram showing another configuration example of a sensor module. [Figure 23] It is a diagram showing another configuration example of a sensor module.

Embodiments for Carrying Out the Invention

[0017] Hereinafter, embodiments to which the present technology is applied will be described with reference to the drawings.

[0018] 〈The First Embodiment〉 〈Configuration Example of Sensor Module〉 This technology facilitates positional calibration and enables the acquisition of good performance by mounting an image sensor and radar antenna at spatially separated locations on the same substrate.

[0019] Figure 1 shows an example configuration of a sensor module (package), which is an example of a semiconductor device to which this technology is applied, as an embodiment of the configuration.

[0020] The sensor module 11 shown in Figure 1 is implemented in mobile devices, vehicles, factory and home building components, etc., and has a shooting function (camera function) and a measurement function for measuring position, speed, etc.

[0021] In this example, the section indicated by arrow Q11 shows a cross-section of the sensor module 11, and the section indicated by arrow Q12 shows a view of the sensor module 11 from above.

[0022] The sensor module 11 includes a semiconductor substrate 21, an image sensor 22, an antenna section 23, and elements 24-1 to 24-4.

[0023] The semiconductor substrate 21 consists of a core substrate 31 and wiring layers 32 and 33 stacked on the core substrate 31.

[0024] In this example, a wiring layer 32 is formed on the upper surface of the core substrate 31 in the area indicated by arrow Q11, and a wiring layer 33 is formed on the lower surface of the core substrate 31 in the area indicated by arrow Q11. The wiring layer 32 and the wiring layer 33 are electrically connected by through-holes or the like provided in the core substrate 31.

[0025] In the diagram of the semiconductor substrate 21 in the area indicated by arrow Q11, an image sensor 22 is positioned (mounted) on the upper surface, i.e., the surface of the wiring layer 32, which receives light incident from an object and converts it into photoelectric light to capture an image.

[0026] The image sensor 22 consists of a CIS (CMOS (Complementary Metal Oxide Semiconductor) Image Sensor), for example. If the image sensor 22 is a CIS, the sensor module 11 is configured to have a millimeter-wave radar antenna built into the CIS package.

[0027] Furthermore, a frame 41 surrounding the image sensor 22 is provided on the semiconductor substrate 21, and a plate-shaped cover glass 42 is provided on the upper part of the frame 41 so as to face the light-receiving surface of the image sensor 22. The cover glass 42 functions as a protective cover (protective member) for protecting the light-receiving surface of the image sensor 22 and for dust and drip protection.

[0028] In the sensor module 11, the image sensor 22 is positioned in the space enclosed by the semiconductor substrate 21, the frame 41, and the cover glass 42.

[0029] Furthermore, in the diagram of the semiconductor substrate 21 in the area indicated by arrow Q11, an antenna section 23 consisting of multiple patch antennas (RF (Radio Frequency) antennas) formed by patterning is provided on the upper surface, i.e., the surface of the wiring layer 32. The antenna section 23 functions as an antenna (millimeter-wave antenna) for a millimeter-wave radar to measure position, speed, etc.

[0030] For clarity, the antenna section 23 is depicted as thicker in this diagram.

[0031] The area indicated by arrow Q12 shows the arrangement of the image sensor 22 and antenna unit 23 on the semiconductor substrate 21 when the sensor module 11 is viewed from top to bottom in the figure, as shown in the area indicated by arrow Q11.

[0032] In this example, the antenna unit 23 is provided on the same plane of the semiconductor substrate 21, near the image sensor 22.

[0033] Furthermore, the antenna unit 23 includes a transmitting antenna unit 51 consisting of multiple transmitting (oscillating) patch antennas, and a receiving antenna unit 52 consisting of multiple receiving patch antennas.

[0034] The transmitting antenna section 51 has multiple transmitting patch antennas arranged vertically and horizontally in the figure. Similarly, the receiving antenna section 52 has multiple receiving patch antennas arranged vertically and horizontally in the figure. In particular, here, each square represents one patch antenna.

[0035] The transmitting patch antenna and the receiving patch antenna that constitute the antenna section 23 are formed on the surface of the semiconductor substrate 21 (wiring layer 32) by patterning so that they are arranged on the same plane. The surface on which these transmitting and receiving patch antennas are arranged becomes the antenna surface (radiating surface) of the millimeter-wave antenna.

[0036] Furthermore, on the semiconductor substrate 21, elements 24-1 to 24-4, such as IC (Integrated Circuit) elements, are mounted on the side opposite to the side on which the image sensor 22 and antenna section 23 are located. Hereafter, unless there is a need to distinguish between elements 24-1 to 24-4, they will simply be referred to as element 24.

[0037] For example, each element 24 may be electrically connected to other elements 24 by a wiring layer 33 which forms an IC layer, or it may be electrically connected to an image sensor 22 or an antenna unit 23 via a semiconductor substrate 21.

[0038] In the following, the side of the semiconductor substrate 21 on which the image sensor 22 and antenna portion 23 are provided will also be referred to as the light incident side, and the side of the semiconductor substrate 21 on which the element 24 is provided will also be referred to as the back side.

[0039] In the sensor module 11, for example, a camera is realized by the image sensor 22 and elements 24 located on the left half of the diagram, as indicated by arrow Q11, and a millimeter-wave radar is realized by the antenna section 23 and elements 24 located on the right half of the diagram. In other words, the sensor module 11 has both a camera and a millimeter-wave radar implemented in it.

[0040] For example, in the area indicated by arrow Q11, light from the subject enters the image sensor 22 from above through the cover glass 42 in the diagram.

[0041] The image sensor 22 receives light incident from the subject and converts it into photoelectric energy to capture an image (still or moving image) of the area in front of the sensor module 11.

[0042] Furthermore, in the area indicated by arrow Q11, the antenna unit 23 transmits millimeter waves (radio waves in the millimeter wave band) upwards in the diagram, i.e., in front of the sensor module 11, using a transmitting patch antenna. The antenna unit 23 also receives millimeter waves that have been reflected by an object in front of the sensor module 11 and returned from the upper side in the diagram, using a receiving patch antenna. By receiving millimeter waves reflected by an object in this way, it is possible to measure the position of the object in front of the sensor module 11, i.e., the distance from the sensor module 11 to the object, and the velocity of that object.

[0043] In the sensor module 11 described above, the image sensor 22 and the millimeter-wave radar antenna 23 are provided at close proximity to each other on the same surface of the same semiconductor substrate 21, and the relative positional relationship between the image sensor 22 and the antenna 23 remains substantially constant.

[0044] Therefore, the sensor module 11 simplifies (makes easier) the calibration of the positional relationship between the image sensor 22 and the antenna unit 23, and in some cases eliminates the need for calibration altogether.

[0045] Furthermore, because the image sensor 22 and the antenna unit 23 are positioned close together, the difference between the field of view of the image sensor 22, i.e., the area to be captured, and the area from which millimeter waves are emitted by the antenna unit 23, in front of the sensor module 11, can be reduced. This enables highly accurate measurement of position (distance), speed, and other parameters.

[0046] Moreover, the image sensor 22 is located in a space enclosed by the semiconductor substrate 21, frame 41, and cover glass 42, while the antenna unit 23 is located outside that space. In other words, the entire image sensor 22, including the light-receiving surface, and the antenna unit 23, that is, the antenna surface (radiating surface) of the millimeter-wave antenna, are located in spatially separated positions (spatially isolated positions).

[0047] Therefore, the sensor module 11 can obtain good characteristics for image capture by the image sensor 22 and measurement by the millimeter-wave radar having the antenna unit 23. In other words, it is possible to obtain higher quality images or more accurate measurement results.

[0048] Specifically, for example, since the image sensor 22 is surrounded by the frame 41 and cover glass 42, it is less susceptible to the influence of millimeter waves radiated from the antenna unit 23 compared to a case where the image sensor 22 and the antenna unit 23 are not spatially separated. As a result, the image sensor 22 can reduce noise caused by millimeter waves and obtain higher quality images.

[0049] Furthermore, in the sensor module 11, for example, the antenna section 23 is not surrounded by a frame 41 or a cover glass 42. In other words, there are no structures of the sensor module 13 in front of the antenna section 23 that would block millimeter waves during radiation or reception.

[0050] Therefore, it is possible to irradiate an object in front with millimeter waves at a higher intensity and receive the millimeter waves reflected by the object at a higher intensity, resulting in more accurate measurements of position, velocity, and other parameters.

[0051] As described above, the sensor module 11 of this technology facilitates calibration and allows for the acquisition of good characteristics.

[0052] <Second Embodiment> <Example of sensor module configuration> Next, other embodiments to which this technology is applied will be described with reference to Figures 2 to 13. Note that in Figures 2 to 13, parts corresponding to those in Figure 1 are denoted by the same reference numerals, and their descriptions will be omitted as appropriate. Also, in Figures 2 to 13, parts corresponding to each other are denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0053] In the example shown in Figure 1, there are no structures related to the sensor module 11 in front of the antenna unit 23, that is, directly in front of the antenna unit 23, so good characteristics can be obtained for measuring position, velocity, etc. using millimeter waves.

[0054] However, in the example shown in Figure 1, the structure of the sensor module 11, and more specifically the structure related to the image sensor 22, such as the frame 41 and cover glass 42, are provided in the direction diagonally to the left front of the antenna section 23.

[0055] Therefore, depending on the positional relationship between the antenna section 23 and the frame 41 and cover glass 42, interference may occur, such as when the millimeter waves (radio waves) used for measurement are reflected by the frame 41 or cover glass 42.

[0056] Therefore, by configuring the antenna section (millimeter-wave radiating surface) of the millimeter-wave radar to be located in front of (forward of) structures related to the image sensor 22, such as the frame 41 and cover glass 42, in the direction of millimeter-wave radiation, the characteristics related to measurement such as position and velocity may be further improved.

[0057] In such cases, the sensor module 11 is configured as shown in Figure 2, for example.

[0058] The configuration of the sensor module 11 shown in Figure 2 differs from that of the sensor module 11 in Figure 1 in that it has an antenna 81 instead of an antenna 23, but otherwise it has the same configuration as the sensor module 11 in Figure 1.

[0059] In Figure 2, as in Figure 1, a cross-section of the sensor module 11 is shown in the area indicated by arrow Q21, and a view of the sensor module 11 from above is shown in the area indicated by arrow Q22.

[0060] In the sensor module 11 shown in Figure 2, an image sensor 22 and a millimeter-wave radar antenna 81 are mounted on the light-incident side of the semiconductor substrate 21.

[0061] The antenna section 81 is a mounted antenna mounted on the semiconductor substrate 21, and includes an antenna substrate 91, a transmitting antenna section 92, and a receiving antenna section 93.

[0062] The antenna substrate 91 is mounted on the semiconductor substrate 21, or more specifically, on the surface of the wiring layer 32, for example, by solder.

[0063] Furthermore, on the surface of the antenna substrate 91 opposite to the semiconductor substrate 21, a transmitting antenna section 92 consisting of multiple transmitting (oscillating) patch antennas and a receiving antenna section 93 consisting of multiple receiving patch antennas are formed.

[0064] The transmitting antenna section 92 and the receiving antenna section 93 correspond to the transmitting antenna section 51 and the receiving antenna section 52 shown in Figure 1. In this example, the surface on which the transmitting antenna section 92 and the receiving antenna section 93 are arranged becomes the antenna surface of the millimeter-wave antenna.

[0065] Furthermore, each patch antenna constituting the transmitting antenna section 92 is electrically connected to the semiconductor substrate 21 and the element 24 by through-holes or the like formed in the antenna substrate 91.

[0066] Similarly, each patch antenna constituting the receiving antenna section 93 is electrically connected to the semiconductor substrate 21 and the element 24 by through holes or the like formed in the antenna substrate 91.

[0067] Therefore, the transmitting antenna unit 92 radiates millimeter waves based on signals supplied from the semiconductor substrate 21 through through-holes or the like in the antenna substrate 91. In addition, signals corresponding to the millimeter waves received by the receiving antenna unit 93 are supplied from the receiving antenna unit 93 to the semiconductor substrate 21 through through-holes or the like in the antenna substrate 91.

[0068] The radiating surface of the antenna section 81 is the surface on which the transmitting antenna section 92 and the receiving antenna section 93 are formed, but the entire antenna section 81, including the antenna substrate 91, functions as an antenna for millimeter-wave radar.

[0069] Furthermore, the area indicated by arrow Q22 shows the arrangement of the image sensor 22 and antenna unit 81 on the semiconductor substrate 21 when the sensor module 11 is viewed from top to bottom in the figure, as shown in the area indicated by arrow Q21.

[0070] In this example, the transmitting antenna section 92 and the receiving antenna section 93, i.e., the transmitting patch antenna and the receiving patch antenna, are formed on the same plane on the antenna substrate 91. The sensor module 11 has a single-patch antenna configuration that performs millimeter wave radiation and reception using multiple patch antennas (antenna section 81) formed on such a single plane.

[0071] In the sensor module 11 described above, in a direction perpendicular to the surface of the semiconductor substrate 21, the transmitting antenna section 92 and the receiving antenna section 93, i.e., the antenna surfaces of the antenna section 81, are positioned higher (further away from the semiconductor substrate 21) than the structure related to the image sensor 22 (cover glass 42).

[0072] In other words, in the direction of radiation of millimeter waves emitted from the antenna section 81, the antenna surface (radiating surface) of the antenna section 81 is located in front of the image sensor 22 and the structures related to the image sensor 22.

[0073] Therefore, it is possible to suppress (reduce) interference caused by the reflection of millimeter waves (radio waves) used for measurement by structures related to the image sensor 22, such as the cover glass 42, and further improve the characteristics related to measurement such as position and velocity.

[0074] Furthermore, empirical evidence has shown that the bandwidth of an antenna, that is, the bandwidth of the millimeter waves it radiates, is closely related to the volume of the part that functions as an antenna.

[0075] Since the antenna section 81 is a mounted antenna, the antenna volume can be increased without increasing the thickness of the semiconductor substrate 21, and a sufficiently wide bandwidth can be secured. In other words, a wide bandwidth antenna can be achieved.

[0076] Furthermore, since it is not necessary to form the entire antenna on the semiconductor substrate 21, which does not have much thickness (volume), there is no need to provide unnecessary interlayer films, etc., on the wiring layer 33, which is the IC layer on the opposite side of the antenna section 81 mounting side, in order to prevent warping or to make the upper and lower wiring layers symmetrical, that is, to make them the same thickness. Consequently, it is possible to reduce the reflection of signals corresponding to millimeter waves during radiation and reception at vias, stubs, etc., provided on the semiconductor substrate 21, and improve RF characteristics (high frequency characteristics).

[0077] <Third Embodiment> <Example of sensor module configuration> Furthermore, although the above describes an example of a single-patch antenna configuration, a double-patch antenna configuration may also be used to expand the antenna bandwidth (broaden the bandwidth).

[0078] In such cases, the sensor module 11 is configured as shown in Figure 3, for example.

[0079] The configuration of the sensor module 11 shown in Figure 3 is the same as the configuration of the sensor module 11 in Figure 1, but with the addition of an antenna section 121.

[0080] In other words, in the example shown in Figure 3, the image sensor 22 and the millimeter-wave radar antenna section 23 and antenna section 121 are provided on the light incident side of the semiconductor substrate 21. Furthermore, the image sensor 22 and the antenna section 23 and antenna section 121 are positioned at spatially separated locations.

[0081] In particular, the antenna section 121 is a mounted antenna attached by adhesive or the like at a position directly above the antenna section 23 on the semiconductor substrate 21, and the section consisting of the antenna section 23 and the antenna section 121 functions as a single millimeter-wave antenna.

[0082] The antenna section 121 includes an antenna substrate 131, a transmitting antenna section 132, and a receiving antenna section 133.

[0083] The antenna substrate 131 is made of, for example, glass, and is placed on the semiconductor substrate 21 such that the transmitting antenna section 51 and the receiving antenna section 52 are covered by the antenna substrate 131. That is, the antenna substrate 131 is positioned directly above the antenna section 23. Note that, unlike in Figure 1, the transmitting antenna section 51 and the receiving antenna section 52 are placed separately here, but these transmitting antenna section 51 and the receiving antenna section 52 may be placed adjacent to each other.

[0084] Furthermore, on the surface of the antenna substrate 131 opposite to the semiconductor substrate 21, a transmitting antenna section 132 consisting of multiple transmitting (oscillating) patch antennas is formed at a position facing the transmitting antenna section 51.

[0085] In other words, the antenna substrate 131 is positioned between the transmitting antenna section 51 and the transmitting antenna section 132, which are arranged to face each other.

[0086] Similarly, on the surface of the antenna substrate 131 opposite to the semiconductor substrate 21, a receiving antenna section 133 consisting of multiple receiving patch antennas is formed at a position facing the receiving antenna section 52.

[0087] The antenna surface (radiating surface) of the antenna section 121 is a plane on which the transmitting antenna section 132 and the receiving antenna section 133 are arranged.

[0088] Similar to the case in Figure 2, the antenna surface of the antenna unit 121 is positioned in front of the structure (cover glass 42) related to the image sensor 22 in the direction of millimeter wave radiation. That is, in a direction perpendicular to the surface of the semiconductor substrate 21, the antenna surface of the antenna unit 121 is positioned further away from the semiconductor substrate 21 than the structure related to the image sensor 22.

[0089] Therefore, interference of millimeter waves used for measurement by structures related to the image sensor 22, such as the cover glass 42, can be reduced.

[0090] Furthermore, the antenna surface of the antenna unit 121 is located in a different position from the plane on which the antenna unit 23 is positioned. In other words, the transmitting antenna unit 51 and the receiving antenna unit 52 are not located on the same plane as the transmitting antenna unit 132 and the receiving antenna unit 133.

[0091] As described above, the sensor module 11 in Figure 3 has a double-patch antenna configuration with two antennas positioned at different locations in the direction of millimeter wave radiation (perpendicular to the semiconductor substrate 21).

[0092] For example, when radiating millimeter waves, if a signal corresponding to millimeter waves is supplied to the transmitting antenna unit 51, the transmitting antenna unit 51 and the transmitting antenna unit 132 are electromagnetically coupled, and millimeter waves are radiated from the transmitting antenna unit 51 and the transmitting antenna unit 132. That is, the signal supplied to the transmitting antenna unit 51 is supplied to the transmitting antenna unit 132 via the antenna substrate 131, and millimeter waves corresponding to that signal are output by the transmitting antenna unit 132.

[0093] Furthermore, when receiving millimeter waves, the receiving antenna unit 52 and the receiving antenna unit 133 are electromagnetically coupled, and the signal (millimeter wave) received by the receiving antenna unit 133 is supplied from the receiving antenna unit 133 to the receiving antenna unit 52 via the antenna substrate 131.

[0094] By using the double-patch antenna configuration described above, it is possible to achieve wider antenna bandwidth and improve RF characteristics.

[0095] <Fourth Embodiment> <Example of sensor module configuration> Furthermore, when using a double-patch antenna configuration, the antenna bandwidth can be further expanded by introducing an air layer between the patch antennas aligned in the direction of millimeter wave radiation.

[0096] In such cases, the sensor module 11 is configured as shown in Figure 4, for example.

[0097] The configuration of the sensor module 11 shown in Figure 4 is basically the same as that of the sensor module 11 in Figure 3. However, in the sensor module 11 of Figure 4, the portion of the antenna substrate 131 directly below the transmitting antenna portion 132 and the portion directly below the receiving antenna portion 133 are concave.

[0098] Therefore, in the antenna section 121, an air layer 161, or air gap, is formed between the transmitting antenna section 51 and the transmitting antenna section 132. Similarly, an air layer 162 (air gap) is also formed between the receiving antenna section 52 and the receiving antenna section 133.

[0099] As a result of the formation of such an air layer, the average dielectric constant between the transmitting antenna section 51 and the transmitting antenna section 132, and the average dielectric constant between the receiving antenna section 52 and the receiving antenna section 133 become lower than in the example shown in Figure 3.

[0100] As a result, it is possible to achieve even wider bandwidth for the antenna, and also increase the gain of the antenna (millimeter wave), i.e., the signal strength.

[0101] Furthermore, in the example shown in Figure 4, the antenna surface of the antenna unit 121 is located in front of the structure related to the image sensor 22, thus reducing millimeter-wave interference.

[0102] <Fifth Embodiment> <Example of sensor module configuration> In the example described above, the millimeter-wave radar antenna and the image sensor 22 are located adjacent to each other, so the image sensor 22 may be affected by unwanted radiation from the antenna.

[0103] Therefore, for example, as shown in Figure 5, the effects of unwanted radiation may be reduced by using a conductive material.

[0104] The configuration of the sensor module 11 shown in Figure 5 is the same as the configuration of the sensor module 11 in Figure 2, but with the addition of a conductive material 191. While this explanation describes an example where the conductive material 191 is added to the sensor module 11 shown in Figure 2, it is not limited to this configuration; the conductive material 191 can also be added to the sensor module 11 shown in Figures 3 and 4.

[0105] In the example shown in Figure 5, for example, as indicated by arrow W11, unwanted radiation (unwanted millimeter-wave radiation) may occur from the antenna unit 81 toward the image sensor 22.

[0106] Therefore, in this example, a conductive material is applied to the surface of the structure on the semiconductor substrate 21 located between the antenna unit 81 and the image sensor 22, on the side facing the antenna unit 81.

[0107] Specifically, a conductive material 191 is applied to the side surface (surface) of the portion of the frame 41 located between the antenna portion 81 and the image sensor 22.

[0108] Furthermore, this conductive material 191 is electrically connected to the analog power supply (analog circuit) ground (GND), i.e., the analog ground, provided on the semiconductor substrate 21.

[0109] By providing such a conductive material 191, unwanted radiation from the antenna section 81 is absorbed by the conductive material 191 and discharged to the analog ground, thereby reducing the impact of unwanted radiation from the antenna section 81 on the image sensor 22. In other words, noise and other unwanted signals can be reduced, resulting in higher quality images.

[0110] In each of the examples described above, an analog ground for the image sensor 22 and an analog ground for millimeter-wave reflection for the millimeter-wave radar, i.e., for the millimeter waves transmitted and received by the millimeter-wave radar, are provided in the wiring layer 32 and wiring layer 33 of the semiconductor substrate 21.

[0111] Therefore, the analog ground for these image sensors 22 (analog ground for image sensors) and the analog ground for millimeter-wave reflection may be made common. In other words, one identical analog ground provided on the semiconductor substrate 21 may be used (functioned) as both the analog ground for the image sensors 22 and the analog ground for millimeter-wave reflection.

[0112] By doing so, the area of ​​the analog ground can be increased, which in turn reduces fluctuations in the power supply on the image sensor 22 (camera) side.

[0113] Furthermore, when viewing the sensor module 11 from a direction parallel to the surface of the semiconductor substrate 21, a large-area analog ground, known as a solid pattern, may be provided in the wiring layer 32 or wiring layer 33 at a position between the image sensor 22 and the antenna of the millimeter-wave radar, such as the antenna unit 23.

[0114] In such cases, the solid ground plane (analog ground) provided between the image sensor 22 and the millimeter-wave radar antenna is used as both the analog ground for the image sensor 22 and the analog ground for millimeter-wave reflection. In other words, the same analog ground is shared by the camera and the millimeter-wave radar.

[0115] Furthermore, some of the multiple elements 24 provided in the sensor module 11, for example, are LDO (Low Dropout) ICs for digital power supplies (for digital circuits) or analog power supplies (for analog circuits), i.e., low dropout regulators or DC / DC converters. These LDO ICs and DC / DC converters can be said to function as analog or digital power supplies.

[0116] Such analog and digital power supplies, i.e., power supply circuits such as LDO ICs and DC / DC converters, component 24, may be shared between the image sensor 22 (camera) and the millimeter-wave radar. In other words, the same component 24 may be used (functioned) as both a power supply for the camera (for the image sensor 22) and a power supply for the millimeter-wave radar.

[0117] By doing so, the power consumption of the sensor module 11 can be reduced compared to the case where separate power supplies are provided for the camera and the millimeter-wave radar.

[0118] <Sixth Embodiment> <Example of sensor module configuration> Furthermore, the strength of the sensor module 11 shown in Figure 1 may be improved by providing a reinforcing frame member.

[0119] For example, in a single-patch antenna configuration where a patch antenna is formed on a semiconductor substrate 21 by patterning, as shown in Figure 1, the semiconductor substrate 21 may warp due to temperature or other factors.

[0120] Therefore, a frame member for reinforcing the semiconductor substrate 21 may be provided, which has through holes as exposed parts for exposing each of the multiple patch antennas.

[0121] In such cases, the sensor module 11 is configured as shown in Figure 6, for example.

[0122] The configuration of the sensor module 11 shown in Figure 6 is the same as the configuration of the sensor module 11 in Figure 1, but with the addition of a frame member 221.

[0123] In Figure 6, the section indicated by arrow Q31 shows a cross-section of the sensor module 11, and the section indicated by arrow Q32 shows a view of the frame member 221 from above.

[0124] In the area indicated by arrow Q31, a reinforcing frame member 221 made of a conductor or insulator is positioned directly above the antenna portion 23 on the semiconductor substrate 21.

[0125] By providing such a frame member 221, it is possible to reduce the occurrence of warping of the semiconductor substrate 21 due to temperature, i.e., the warping fluctuation of the semiconductor substrate 21. This makes it possible to obtain good characteristics for imaging by the image sensor 22 and measurement by millimeter-wave radar.

[0126] Alternatively, the frame member 221 may be made conductive and electrically connected to the analog ground provided on the semiconductor substrate 21. By doing so, similar to the example in Figure 5, the influence of unwanted radiation from the antenna section 23 on the image sensor 22 can be reduced.

[0127] Furthermore, as shown by arrow Q32, through holes are provided as exposed parts in the portion of the frame member 221 directly above each patch antenna of the antenna section 23, in order to expose those patch antennas, i.e., the antenna surfaces.

[0128] For example, when viewing the frame member 221 from a direction perpendicular to the surface of the semiconductor substrate 21 (from above), the frame member 221 is provided with a single square-shaped through-hole as an exposed portion 232 to expose one patch antenna 231. That is, the patch antenna 231 is surrounded by the wall surface of the frame member 221 that forms the exposed portion 232, thereby exposing the patch antenna 231.

[0129] Therefore, since there are no members forming the frame member 221 between the patch antenna 231 and the object whose position and velocity are to be measured, which is located in front of the patch antenna 231, millimeter waves will not be shielded by the frame member 221.

[0130] For the sake of clarity, the transmitting and receiving patch antennas that make up the antenna section 23 are not distinguished, and a single square with a hatched line represents one patch antenna, and the number of patch antennas is also depicted as fewer than it actually is. This is also the case in Figures 7 and 8, which will be discussed later.

[0131] Furthermore, although only one of the multiple patch antennas is labeled in Figure 6, in the following text, any patch antenna for transmitting or receiving that constitutes the antenna section 23 will also be referred to as patch antenna 231.

[0132] Similarly, although only one of the multiple exposed portions provided on the frame member 221 is assigned a reference numeral, in the following text any exposed portion provided on the frame member 221 will also be referred to as exposed portion 232.

[0133] In this example, one square-shaped exposed portion 232 is provided for each patch antenna 231.

[0134] In other words, when the frame member 221 is viewed from a direction perpendicular to the surface of the semiconductor substrate 21, multiple exposed portions 232 are regularly arranged on the frame member 221 in the vertical and horizontal directions perpendicular to each other. In other words, multiple exposed portions 232 are arranged on the frame member 221 in a grid pattern. Alternatively, one exposed portion 232 may be provided for multiple patch antennas 231.

[0135] Since such a lattice-shaped frame member 221 is known to have high strength, by providing the frame member 221 directly above the antenna portion 23 on the semiconductor substrate 21, the warping fluctuations of the semiconductor substrate 21 can be reduced.

[0136] <Modified form of the sixth embodiment> <Example of frame component configuration> Furthermore, the number and shape of the exposed parts provided on the frame member 221 are not limited to the example shown in Figure 6, but can be any number and shape.

[0137] For example, as shown in Figure 7, one through-hole surrounding multiple patch antennas 231 may be made into one exposed portion 261.

[0138] Figure 7 shows the frame member 221 of the sensor module 11 as viewed from a direction perpendicular to the surface of the semiconductor substrate 21. In this figure, only one of the multiple exposed parts provided on the frame member 221 is labeled with a reference numeral, but below, any exposed part provided on the frame member 221 will also be referred to as exposed part 261.

[0139] In this example, the frame member 221 has multiple rectangular exposed portions 261 arranged in the horizontal direction (perpendicular to the vertical direction), i.e., along the shorter side of the exposed portions 261.

[0140] In other words, the frame member 221 is a frame with a blind-like shape, in which multiple exposed parts 261 are formed in a blind-like manner. It should be noted that such a blind shape can also be said to be one example of a grid shape.

[0141] In Figure 7, the four patch antennas 231 arranged vertically are surrounded by the wall surface of a frame member 221 that forms a single exposed section 261. As a result, in the portion of the exposed section 261, all four patch antennas 231 are exposed.

[0142] Since such a blind-shaped frame is known to have high strength, the warping fluctuations of the semiconductor substrate 21 can also be reduced by providing the blind-shaped frame member 221 shown in Figure 7 directly above the antenna portion 23 on the semiconductor substrate 21.

[0143] Alternatively, as shown in Figure 8, for example, one circular (cylindrical) through-hole surrounding one patch antenna 231 may be made into one exposed portion 291.

[0144] Figure 8 shows the frame member 221 of the sensor module 11 as viewed from a direction perpendicular to the surface of the semiconductor substrate 21. In this figure, only one of the multiple exposed parts provided on the frame member 221 is labeled with a reference numeral, but below, any exposed part provided on the frame member 221 will also be referred to as exposed part 291.

[0145] In this example, the frame member 221 has multiple exposed portions 291 that form a circular shape when viewed from a direction perpendicular to the surface of the semiconductor substrate 21, arranged regularly in the vertical and horizontal directions in the figure.

[0146] Specifically, one patch antenna 231 is surrounded by the wall surface of a frame member 221 that forms one exposed portion 291. Therefore, in the portion of the exposed portion 291, one patch antenna 231 is exposed.

[0147] Since a structure with multiple circular exposed portions 291 is known to have even greater strength than the aforementioned blind-shaped or lattice-shaped structures, the warping fluctuations of the semiconductor substrate 21 can also be reduced by providing a frame member 221 with the shape shown in Figure 8 directly above the antenna portion 23 on the semiconductor substrate 21.

[0148] As explained with reference to Figures 6 to 8, the shape of the exposed portion of the patch antenna 231 can be any shape. Furthermore, the radiation pattern of millimeter waves (radio waves) emitted from the patch antenna 231 changes depending on the shape of the exposed portion.

[0149] Therefore, the shape of the exposed portion may be adjusted to control the radiation shape of the millimeter waves emitted from the patch antenna 231.

[0150] <Seventh Embodiment> <Example of sensor module configuration> Furthermore, in the case of a double-patch antenna configuration, as shown in Figure 4, for example, the antenna substrate, which also functions as an antenna, may also be used as a component that spatially separates the image sensor 22. In other words, one component may be shared as the cover glass and frame of the image sensor 22 and the antenna substrate of the mounted antenna.

[0151] In such cases, the sensor module 11 is configured as shown in Figure 9, for example.

[0152] The sensor module 11 shown in Figure 9 has a configuration in which an antenna substrate 321 is newly added in place of the frame 41, cover glass 42, and antenna substrate 131 of the sensor module 11 shown in Figure 4.

[0153] In Figure 9, the section indicated by arrow Q41 shows a cross-section of the sensor module 11, and the section indicated by arrow Q42 shows a view of the sensor module 11 from above.

[0154] As shown by arrow Q41, in this example, the antenna substrate 321 is mounted on the light incident side of the semiconductor substrate 21 by adhesive or other means.

[0155] For example, the antenna substrate 321 is formed from a material such as glass that is based on Si (silicon) and O (oxygen), that is, a material that contains Si and O as its main raw materials.

[0156] Furthermore, the portions directly above the image sensor 22, the transmitting antenna section 51, and the receiving antenna section 52 on the antenna substrate 321 are concave, forming air gaps 331, 332, and 333.

[0157] In other words, the image sensor 22 is placed in a space surrounded by the antenna substrate 321 and the semiconductor substrate 21, and this space is an air layer 331.

[0158] In this case, the portion of the antenna substrate 321 surrounding the image sensor 22 functions as a cover glass (protective member) or frame.

[0159] Similarly, the transmitting antenna section 51 is located within the space enclosed by the antenna substrate 321 and the semiconductor substrate 21, that is, within the air layer 332, and the receiving antenna section 52 is located within the space enclosed by the antenna substrate 321 and the semiconductor substrate 21, that is, within the air layer 333.

[0160] Therefore, the entire image sensor 22, including the light-receiving surface, and the transmitting antenna section 51, receiving antenna section 52, transmitting antenna section 132, and receiving antenna section 133 that constitute the antenna of the millimeter-wave radar are spatially separated (disconnected).

[0161] Therefore, in the sensor module 11 shown in Figure 9, as in the case of Figure 1, noise caused by millimeter waves in the image sensor 22 can be reduced, and higher quality images can be obtained.

[0162] Furthermore, similar to the example in Figure 4, not only the transmitting antenna section 132 and the receiving antenna section 133, but also the antenna substrate 321 functions as part of the antenna.

[0163] In the sensor module 11, the transmitting antenna section 51 and the transmitting antenna section 132, and the receiving antenna section 52 and the receiving antenna section 133 are electromagnetically coupled, and millimeter waves are emitted and received.

[0164] In other words, the signal supplied to the transmitting antenna unit 51 is supplied to the transmitting antenna unit 132 via the air layer 332 and the antenna substrate 321, and millimeter waves corresponding to that signal are output by the transmitting antenna unit 132. Also, the signal (millimeter waves) received by the receiving antenna unit 133 is supplied from the receiving antenna unit 133 to the receiving antenna unit 52 via the antenna substrate 321 and the air layer 333.

[0165] In this case, the plane on which the transmitting antenna section 132 and the receiving antenna section 133 are arranged becomes the millimeter-wave antenna surface, and, as in the case shown in Figure 2, the antenna surface is located in front of the structure related to the image sensor 22 in the direction of millimeter-wave radiation. Therefore, interference of the millimeter waves used for measurement by the structure related to the image sensor 22 can be reduced.

[0166] Furthermore, in this example, since air layers 332 and 333, which form air gaps, are provided, the average dielectric constant can be lowered, similar to the example shown in Figure 4, thereby enabling a wider bandwidth for the antenna and increasing the gain of the antenna (millimeter wave).

[0167] Furthermore, as shown by arrow Q42, the antenna substrate 321 is a frame structure member positioned to cover the entire portion of the image sensor 22 and antenna section 23 on the semiconductor substrate 21. Therefore, the antenna substrate 321 also functions as a reinforcing frame member, similar to the example shown in Figure 6, and can reduce warping fluctuations of the semiconductor substrate 21.

[0168] <Modified form of the seventh embodiment> <Example of sensor module configuration> Although Figure 9 illustrates an example in which air layers 332 and 333 are provided around the transmitting antenna section 51 and the receiving antenna section 52, these air layers 332 and 333 may be omitted.

[0169] In such cases, the sensor module 11 is configured as shown in Figure 10, for example.

[0170] The configuration of the sensor module 11 shown in Figure 10 is basically the same as the configuration of the sensor module 11 shown in Figure 9, differing only in that the air layers 332 and 333 are not provided.

[0171] In this case, compared to the example in Figure 9, the antenna bandwidth is narrower due to the absence of air gaps, but the contact area between the antenna substrate 321 and the semiconductor substrate 21 is increased, which further reduces the warping variation of the semiconductor substrate 21.

[0172] <Eighth Embodiment> <Example of sensor module configuration> Furthermore, as mentioned above, when the analog ground for the image sensor 22 and the analog ground for millimeter-wave reflection are made common, the shared analog ground may be used as a heat spreader.

[0173] In such cases, the sensor module 11 is configured as shown in Figure 11, for example.

[0174] The configuration of the sensor module 11 shown in Figure 11 is the same as the configuration of the sensor module 11 in Figure 1, but with the addition of a heat dissipation member 361.

[0175] In this example, for instance, a shared analog ground (not shown) is provided within the wiring layer 32 of the semiconductor substrate 21. This shared analog ground is used both as an analog ground for the image sensor 22 and as an analog ground for millimeter-wave reflection of the millimeter-wave radar.

[0176] Furthermore, a heat dissipation component 361, such as a graphite sheet, is connected to the shared analog ground, and the shared analog ground also functions as a heat spreader. This allows for more efficient heat dissipation.

[0177] In this case, heat generated by, for example, the image sensor 22 is transported to the heat dissipation member 361 via the shared analog ground and dissipated into the outside air.

[0178] Furthermore, since the antenna section 23, which is the antenna of the millimeter-wave radar, is a passive component, using the analog ground for millimeter-wave reflection of the millimeter-wave radar as a heat dissipation path (heat spreader) does not particularly affect the operation or characteristics of the millimeter-wave radar.

[0179] <Ninth Embodiment> <Example of sensor module configuration> Furthermore, as shown in Figure 12, for example, if the image sensor 22 is mounted as a flip chip, a structure may be provided that allows heat to be directly transferred from the image sensor 22 and the millimeter-wave radar element 24 by the heat dissipation member 391.

[0180] In the example shown in Figure 12, the image sensor 22 is flip-chip mounted on the semiconductor substrate 21 on the side opposite to the side on which the antenna portion 23 is provided.

[0181] Specifically, the semiconductor substrate 21 has through-holes 392 for flip-chip mounting, and the image sensor 22 is flip-chip mounted in the portion of the through-holes 392 on the back surface of the semiconductor substrate 21. In particular, the light-receiving surface of the image sensor 22 is oriented toward the light-incident side of the semiconductor substrate 21.

[0182] Furthermore, a cover glass 42 is placed on the light-incident side of the semiconductor substrate 21, and the light-incident side of the through hole 392 is covered by the cover glass 42. In addition, the antenna portion 23 of the millimeter-wave radar is formed on the light-incident side of the semiconductor substrate 21.

[0183] Therefore, the light-receiving surface of the image sensor 22 is located within a space enclosed by the semiconductor substrate 21, more specifically the side surface of the semiconductor substrate 21 forming the through-hole 392, the image sensor 22, and the cover glass 42. In other words, the light-receiving surface of the image sensor 22 and the antenna portion 23 are located in spatially separated positions.

[0184] In this example, elements 24-2 to 24-4 are IC elements (millimeter-wave elements) such as amplifiers that constitute the millimeter-wave radar, and these elements 24-2 to 24-4 and the image sensor 22 are arranged on the same plane.

[0185] Furthermore, a heat dissipation member 391 made of a graphite sheet or the like is connected to the side of each element 24-2 to 24-4 and the image sensor 22 that is opposite to the back side of the semiconductor substrate 21.

[0186] Therefore, the heat generated by the image sensor 22 and element 24 is directly transported by the heat dissipation member 391 without going through the analog ground or the like, allowing for more efficient heat dissipation.

[0187] Moreover, in this example, since the image sensor 22 is mounted on the side of the semiconductor substrate 21 opposite to the side on which the antenna portion 23 is provided, the influence of millimeter waves radiated from the antenna portion 23 on the image sensor 22 can be suppressed.

[0188] In the example shown in Figure 12, an additional antenna portion 121, shown in Figure 3 or Figure 4, may be provided directly above the antenna portion 23 on the semiconductor substrate 21. Alternatively, in the example shown in Figure 12, an antenna portion 81, shown in Figure 2, may be provided instead of the antenna portion 23.

[0189] <Tenth Embodiment> <Example of antenna configuration> Furthermore, in the example shown in Figure 1, the transmitting antenna unit 51 and the receiving antenna unit 52 were located adjacent to each other, but as shown in Figure 13, for example, the transmitting antenna unit 51 and the receiving antenna unit 52 may be arranged on either side of the image sensor 22.

[0190] Figure 13 shows the sensor module 11 viewed from a direction perpendicular to the surface of the semiconductor substrate 21.

[0191] In this example, an image sensor 22 is located in the center of the light-incident side of the semiconductor substrate 21, and the image sensor 22 is positioned within the space enclosed by the semiconductor substrate 21, the frame 41, and the cover glass 42.

[0192] Furthermore, in the diagram of the image sensor 22, a transmitting antenna unit 51 is provided on the right side, and a receiving antenna unit 52 is provided on the left side. In other words, the image sensor 22 is positioned between the transmitting antenna unit 51 and the receiving antenna unit 52.

[0193] By arranging the transmitting antenna section 51 and the receiving antenna section 52 at a certain distance apart, the oscillation and reception of millimeter waves, in other words, the transmitting circuit and the receiving circuit, can be clearly electrically separated. This allows for even better characteristics to be obtained for measurements using millimeter-wave radar.

[0194] <Example of a sensor module's functional configuration> The sensor module 11 of each configuration described above can be used, for example, for gesture assistance.

[0195] In such a case, for example, the sensor module 11 is configured to include a high-speed, low-pixel-count imaging device that utilizes a PDIC pixel, which integrates a PD (photodiode) and an IC, and a millimeter-wave radar, which are composed of an image sensor 22 or the like.

[0196] For example, high-speed, low-resolution imaging devices are used to detect relatively fast movements such as a user's blink, while millimeter-wave radar is used to detect relatively slow movements. In this case, when detecting a blink, for example, it is necessary to capture images (video) at a frame rate of about 20 kHz using a high-speed, low-resolution imaging device.

[0197] Furthermore, the sensor module 11 described above can be applied to or mounted on various electronic devices, including mobile devices, building components for factories and homes, as well as mobile vehicles such as automobiles, trains, and ships.

[0198] Furthermore, the functional configuration of the sensor module 11 described above can be, for example, the configuration shown in Figure 14. In particular, the functional configuration of the sensor module 11 shown in Figure 1 will be explained here with reference to Figure 14.

[0199] The sensor module 11 shown in Figure 14 includes an image sensor 22, a clock element 441, a PLL (Phase Locked Loop) circuit 442, an arithmetic unit 443, a 3.3V LDO 445, a 1.8V LDO 446, a 1.2V LDO 447, an SCL (Serial Clock Line) 448, an SDA (Serial Data Line) 449, a synthesizer 450, an amplification unit 451, a transmitting antenna unit 51, a receiving antenna unit 52, an amplification unit 452, a mixer 453, an LPF (Low Pass Filter) 454, an ADC (Analog to Digital Converter) 455, a level shifter 456, and an IO expander 457.

[0200] For example, in the sensor module 11, a millimeter-wave radar using the FMCW (Frequency Modulated Continuous Wave) method is realized through the use of a synthesizer 450, an amplifier 451, a transmitting antenna 51, a receiving antenna 52, an amplifier 452, a mixer 453, an LPF 454, an ADC 455, a level shifter 456, and the like.

[0201] The clock element 441 consists of, for example, a crystal oscillator, and outputs a signal of a predetermined frequency for generating a clock signal to the PLL circuit 442. The PLL circuit 442 generates a clock signal by dividing the frequency of the signal supplied from the clock element 441 and supplies it to the arithmetic unit 443.

[0202] The arithmetic unit 443 consists of components such as a DSP (Digital Signal Processor), FPGA (Field Programmable Gate Array), and CPU (Central Processing Unit), and controls the operation of the entire sensor module 11.

[0203] For example, the arithmetic unit 443 operates various parts of the sensor module 11 based on the clock signal supplied from the PLL circuit 442, and also supplies the clock signal supplied from the PLL circuit 442 to the image sensor 22, etc.

[0204] Furthermore, for example, the arithmetic unit 443 controls the operation of the amplifiers 451, 452, and mixer 453 by supplying control signals to them via the IO expander 457 for expansion.

[0205] The image sensor 22 includes a pixel array section 481, a driver 482, a sequencer 483, a CDS (Correlated Double Sampling) circuit 484, an ADC 485, an output section 486, and an image processing section 487.

[0206] The pixel array section 481 is provided with multiple pixels arranged in a matrix. In this diagram, the horizontal direction is referred to as the row direction, and multiple pixels arranged in the row direction are also referred to as pixel rows. In the diagram, the vertical direction is referred to as the column direction, and multiple pixels arranged in the column direction are also referred to as pixel columns.

[0207] For example, the pixels constituting the pixel array 481 may have a configuration that includes a PD, a transfer transistor, an FD (Floating Diffusion) transistor, an amplification transistor, a selection transistor, and a reset transistor.

[0208] In such cases, light incident on the PD (photoelectric converter) is converted into electricity, and the resulting charge is transferred to the FD via the transfer transistor.

[0209] When the selection transistor is ON, a voltage signal corresponding to the charge stored in FD is output to a vertical signal line (not shown) via the amplifying transistor and the selection transistor. Additionally, the reset transistor is turned ON as needed to discharge the charge stored in FD and PD.

[0210] In a pixel array section 481 having pixels with this configuration, it is possible to capture high-quality images with low noise.

[0211] Furthermore, the configuration of each pixel is not limited to the configuration described above; any configuration is acceptable, such as a configuration in which the transfer transistor or selection transistor is omitted from the above configuration.

[0212] The driver 482 controls the operation of each pixel, such as charge transfer and signal readout, by supplying drive signals to each pixel constituting the pixel array 481 via signal lines (not shown).

[0213] The sequencer 483 controls the operating timing of the driver 482, CDS circuit 484, ADC 485, and output unit 486 based on the clock signal supplied from the arithmetic unit 443.

[0214] The CDS circuit 484 generates pixel signals by performing correlated double sampling (CDS) on the signals supplied from each pixel of the pixel array section 481 via vertical signal lines (not shown), and supplies these signals to the ADC 485 corresponding to each pixel row.

[0215] In the image sensor 22, an ADC485 is provided for each pixel row (vertical signal line), but for the sake of clarity in the diagram, only some of the ADC485s are labeled.

[0216] The ADC485 converts the analog pixel signals supplied from the CDS circuit 484 into digital pixel signals and supplies them to the output unit 486. The output unit 486 generates an image signal based on the pixel signals for each pixel supplied from each ADC485 and supplies it to the image processing unit 487.

[0217] The image processing unit 487 performs various image processing operations, such as color space conversion and demosaicing, on the image signal supplied from the output unit 486, and supplies the resulting image signal to the arithmetic unit 443. The arithmetic unit 443 performs object recognition and other operations on the image signal supplied from the image processing unit 487, i.e., the video captured by the image sensor 22.

[0218] Furthermore, the sensor module 11 is equipped with 3.3V LDO445, 1.8V LDO446, and 1.2V LDO447, which function as analog or digital power supplies to various parts of the sensor module 11. For example, the 3.3V LDO445 to 1.2V LDO447 are shared between the image sensor 22 and the millimeter-wave radar.

[0219] SCL448 and SDA449 are I2C buses that connect the arithmetic unit 443 to external devices. Specifically, SCL448 is a signal line for the clock, and SDA449 is a signal line for data transfer, and the arithmetic unit 443 exchanges data with external devices via SDA449.

[0220] The PLL circuit 444 generates a new clock signal by dividing the frequency of the clock signal supplied from the arithmetic unit 443 and supplies it to the synthesizer 450.

[0221] The synthesizer 450 generates an FMCW signal whose frequency changes over time by performing a frequency sweep based on the clock signal supplied from the PLL circuit 444, and supplies it to the amplifier 451 and mixer 453.

[0222] The amplification unit 451 amplifies the FMCW signal supplied from the synthesizer 450 and supplies it to the transmitting antenna unit 51, causing the transmitting antenna unit 51 to radiate (output) millimeter waves corresponding to the FMCW signal.

[0223] The amplification unit 452 amplifies the received signal corresponding to the millimeter wave received by the receiving antenna unit 52 and supplies it to the mixer 453. The mixer 453 mixes the FMCW signal supplied from the synthesizer 450 and the received signal supplied from the amplification unit 452 to generate an intermediate frequency signal and supplies it to the LPF 454.

[0224] The LPF454 filters the intermediate frequency signal supplied from the mixer 453, allowing only the low-frequency components to pass through, and then supplies the resulting output signal to the ADC455.

[0225] The level shifter 456 supplies a reference signal to the ADC 455 whose voltage changes over time. Based on the reference signal supplied from the level shifter 456, the ADC 455 performs AD conversion on the output signal supplied from the LPF 454 and supplies the resulting digital output signal to the arithmetic unit 443.

[0226] The calculation unit 443 determines the distance to an object in front of the sensor module 11, i.e., the object's position, and the object's speed, based on the output signal supplied from the ADC 455. For example, if the object being measured is moving, the millimeter waves will be reflected by the object, causing a phase shift in the millimeter waves. Therefore, the sensor module 11 measures the distance to the object and the object's speed from the phase difference between the FMCW signal and the received signal, i.e., the intermediate frequency signal corresponding to the phase shift.

[0227] In the sensor module 11 configured as described above, the same clock signal generated from the output of a single clock element 441 is used for both the image capture operation of the image sensor 22 and the measurement operation of the millimeter-wave radar, such as the generation of the FMCW signal. Furthermore, the image sensor 22 and the transmitting antenna section 51 and receiving antenna section 52 that constitute the antenna section 23 are located at close range to each other.

[0228] Therefore, there is virtually no time lag, or temporal discrepancy, between the timing of image (video) capture by the image sensor 22 (image frame rate) and the timing of millimeter wave emission by the antenna unit 23.

[0229] Furthermore, generally, calibration to synchronize the image signal and the output signal is required at regular time intervals in the calculation unit 443. However, in the sensor module 11, as described above, there is virtually no discrepancy between the capture timing and the emission timing, so calibration to synchronize the image signal and the output signal is either unnecessary or can be performed instantaneously.

[0230] Furthermore, in the sensor module 11, the image sensor 22 and the antenna unit 23 are provided on the same semiconductor substrate 21. Therefore, the relative positional relationship between the image sensor 22 and the antenna unit 23 is always constant, and calibration of the positional relationship is either unnecessary or can be easily performed.

[0231] <Explanation of manufacturing process> Next, we will describe the manufacturing method of the sensor module 11 described above. Here, we will describe the manufacturing of each sensor module 11 shown in Figures 2 and 3 as examples, but sensor modules 11 with other configurations can be manufactured in basically the same way as the sensor modules 11 shown in Figures 2 and 3.

[0232] First, with reference to Figure 15, we will explain the manufacturing process for producing the sensor module 11 with the configuration shown in Figure 3.

[0233] First, a semiconductor substrate 21 having a core substrate 31, a wiring layer 32, and a wiring layer 33 is fabricated as shown by arrow W41. In this process, a transmitting antenna section 51 and a receiving antenna section 52 are also formed on the surface of the wiring layer 32.

[0234] Next, as shown by arrow W42, components such as element 24 are mounted on the back surface of the semiconductor substrate 21, that is, on the surface of the wiring layer 33, and then, as shown by arrow W43, the image sensor 22 is mounted on the light incident side of the semiconductor substrate 21, that is, on the surface of the wiring layer 32.

[0235] Finally, as shown by arrow W44, the structure related to the image sensor 22 and the antenna portion 121 are formed on the light incident side of the semiconductor substrate 21, that is, on the surface of the wiring layer 32.

[0236] For example, in this example, a frame 41 surrounding the image sensor 22 is fixed to the light-incident side surface of the semiconductor substrate 21 by adhesive or the like, and a cover glass 42 is further fixed to the upper part of the frame 41 by adhesive or the like.

[0237] Furthermore, the antenna section 121 is mounted by adhesive or the like at a position directly above the transmitting antenna section 51 and the receiving antenna section 52 on the light incident side surface of the semiconductor substrate 21.

[0238] Once the above steps are completed, the sensor module 11 shown in Figure 3 is finished.

[0239] Next, with reference to Figure 16, the manufacturing process for producing the sensor module 11 with the configuration shown in Figure 2 will be described.

[0240] First, a semiconductor substrate 21 having a core substrate 31, a wiring layer 32, and a wiring layer 33 is fabricated as shown by arrow W51.

[0241] Next, as shown by arrow W52, components such as element 24 are mounted on the back surface of the semiconductor substrate 21, that is, on the surface of the wiring layer 33.

[0242] Furthermore, as shown by arrow W53, the antenna portion 81 is mounted on the light-incident side of the semiconductor substrate 21, that is, on the surface of the wiring layer 32.

[0243] Finally, as shown by arrow W54, the image sensor 22 and the structures related to the image sensor 22 are formed on the light incident side of the semiconductor substrate 21, that is, on the surface of the wiring layer 32.

[0244] For example, in this example, an image sensor 22 is mounted on the light-incident side of the semiconductor substrate 21. Then, a frame 41 surrounding the image sensor 22 is fixed to the light-incident side of the semiconductor substrate 21 by adhesive or the like, and a cover glass 42 is further fixed to the top of the frame 41 by adhesive or the like.

[0245] Once each of the above steps is completed, the sensor module 11 shown in Figure 2 is finished.

[0246] <Embodiment 11> <Example of sensor module configuration> For example, in the sensor module 11 shown in Figure 2, the radiating surface (antenna surface) of the antenna section 81 is positioned in front of the structure related to the image sensor 22, thereby suppressing interference of millimeter waves used for measurement by the structure related to the image sensor 22.

[0247] In the example shown in Figure 2, a frame 41 and a cover glass 42 are provided as structures related to the image sensor 22, but a lens housing and the like may also be provided as structures related to the image sensor 22. When a lens housing and the like are provided, the millimeter-wave radiating surface needs to be positioned further forward in order to suppress the occurrence of millimeter-wave interference.

[0248] Therefore, a free-scale board that is less likely to generate unwanted radiation may be provided between the millimeter-wave radar package (antenna-on-package) and the semiconductor substrate 21. This allows the millimeter-wave radar package and the image sensor 22 to be placed closer together while suppressing the occurrence of millimeter-wave interference.

[0249] In such cases, the sensor module 11 is configured as shown in Figure 17, for example. Figure 17 shows a cross-section of the sensor module 11. Note that in Figure 17, parts corresponding to those in Figure 1 are given the same reference numerals, and their explanations are omitted as appropriate.

[0250] In the sensor module 11 shown in Figure 17, an image sensor 22 is mounted on a semiconductor substrate 21, and a frame 41 and a cover glass 42 are provided around the image sensor 22 in the same arrangement as in the example in Figure 1.

[0251] Furthermore, a lens housing 501 having a lens that guides external light to the image sensor 22 is provided on the semiconductor substrate 21, and the image sensor 22, frame 41, and cover glass 42 are covered by the lens housing 501.

[0252] In this example, a frame 41, a cover glass 42, and a lens housing 501 are provided as structures related to the image sensor 22.

[0253] A raised substrate 502 is mounted on the semiconductor substrate 21 adjacent to the lens housing 501 by bumps, and a substrate 503 constituting the millimeter-wave radar package, i.e., the millimeter-wave radar module, is mounted on the raised substrate 502 by bumps.

[0254] The circuit board 503 houses an RFIC 504 that generates analog signals. The RFIC 504 corresponds to, for example, the synthesizer 450 and mixer 453 shown in Figure 14. In other words, the RFIC 504 is equipped with the synthesizer 450 and mixer 453.

[0255] Furthermore, on the side of the substrate 503 opposite to the raised substrate 502, an antenna section 23 is provided, consisting of multiple patch antennas formed by patterning. The antenna section 23 consists of a transmitting antenna section 51 and a receiving antenna section 52, and functions as an antenna (millimeter-wave antenna) for a millimeter-wave radar.

[0256] In the example shown in Figure 17, the substrate 503, RFIC 504, and antenna section 23 constitute the millimeter-wave module 505, which is a module (package) of the millimeter-wave radar. In particular, in this example, the analog section of the millimeter-wave radar is concentrated in the millimeter-wave module 505.

[0257] In the sensor module 11, a base plate 502 with a thickness (height) corresponding to the height of the lens housing 501 is provided between the millimeter-wave module 505 and the semiconductor substrate 21. In other words, the millimeter-wave module 505 is mounted on the semiconductor substrate 21 via the base plate 502.

[0258] Therefore, in the direction of millimeter wave radiation, i.e., the vertical direction in the figure, the antenna section 23 (millimeter wave antenna surface) of the millimeter wave radar is positioned in front of (forward of) structures related to the image sensor 22, such as the lens housing 501.

[0259] This suppresses interference caused by reflection of the millimeter waves (radio waves) used for measurement by structures related to the image sensor 22, such as the lens housing 501, thereby reducing interference and further improving measurement characteristics such as position and velocity. In addition, because interference can be suppressed, the millimeter wave module 505 and the image sensor 22 can be placed in close proximity, and the sensor module 11 can be miniaturized.

[0260] In particular, with the sensor module 11, the thickness (height) of the base plate 502 can be adjusted according to the height of the lens housing 501, making it easy to suppress millimeter-wave interference.

[0261] Furthermore, the placement of the antenna section 23 (millimeter-wave antenna surface) does not necessarily need to be in front of the structure related to the image sensor 22 in the direction of millimeter-wave radiation; it is sufficient if it can suppress millimeter-wave interference to a reasonable extent.

[0262] The raised substrate 502 has multiple through-holes (through-vias) formed therein that electrically connect the millimeter-wave module 505 (substrate 503) and the semiconductor substrate 21.

[0263] These through-holes are used solely for transmitting analog I / O signals or supplying power to the millimeter-wave module 505. Specifically, the raised substrate 502 is provided with only through-holes for transmitting input signals supplied (input) to the millimeter-wave module 505, through-holes for transmitting output signals output from the millimeter-wave module 505, and through-holes for supplying power to the millimeter-wave module 505.

[0264] Between the millimeter-wave module 505 and the semiconductor substrate 21, only I / O signals (input signals and output signals) and power are exchanged via the raised substrate 502.

[0265] Since the raised substrate 502 is a circuit board that transmits (passes through) only I / O signals and power, there is almost no unwanted radiation from the raised substrate 502. Therefore, interference to the image sensor 22 caused by unwanted millimeter waves emitted from the raised substrate 502 can be suppressed, and the millimeter wave module 505 and the image sensor 22 can be placed even closer together.

[0266] In addition to through-holes, the raised substrate 502 also has three ground layers 506-1 to 506-3 formed therein, and these ground layers 506-1 to 506-3 are electrically connected to, for example, a ground provided on the semiconductor substrate 21.

[0267] In the following, when there is no need to distinguish between ground layers 506-1 to 506-3, they will simply be referred to as ground layer 506. Furthermore, although this description explains an example in which three ground layers 506 are formed on a raised substrate 502, arranged perpendicular to the surface of the raised substrate 502, the number of ground layers 506 formed may be any number.

[0268] In the part indicated by arrow Q61 in FIG. 17, a view of the ground layer 506 portion of the bottom-raising substrate 502 as seen from a direction perpendicular to the surface of the bottom-raising substrate 502 is shown.

[0269] In this example, a plurality of through-holes including through-hole 507-1 and through-hole 507-2 are formed in the bottom-raising substrate 502, and a ground layer 506 composed of a rectangular frame-shaped ground wiring pattern is formed so as to surround all of these through-holes.

[0270] For example, through-hole 507-1 and through-hole 507-2 are through-holes for transmitting the above-described I / O signals or for power supply. Hereinafter, when there is no need to particularly distinguish through-holes provided in the bottom-raising substrate 502 such as through-hole 507-1 and through-hole 507-2, they may simply be referred to as through-hole 507.

[0271] For example, when an input signal is supplied to the millimeter-wave module 505 from the semiconductor substrate 21 through the through-hole 507, the millimeter-wave module 505 radiates millimeter waves from the transmitting antenna portion 51 in response to the input signal. Further, for example, the millimeter-wave module 505 supplies an output signal corresponding to the millimeter waves received by the receiving antenna portion 52 to the semiconductor substrate 21 through the through-hole 507.

[0272] By surrounding the inside of the through-hole 507 for transmitting such I / O signals or for power supply, that is, the inside of the bottom-raising substrate 502 with the ground layer 506, external noise can be reduced and the quality of the I / O signals can be improved.

[0273] <Modification Example 1 of the Eleventh Embodiment> <Configuration Example of Sensor Module> In FIG. 17, an example in which a rectangular frame-shaped ground layer 506 is formed on the bottom-raising substrate 502 has been described. However, the present invention is not limited to this, and the ground layer may have any shape, or a configuration in which no ground layer is formed on the bottom-raising substrate 502 may be adopted.

[0274] For example, as shown in Figure 18, instead of the ground layer 506, a wide wiring pattern may be formed on the raised substrate 502 as the ground layer 531. Note that in Figure 18, the same reference numerals are used for parts corresponding to those in Figure 17, and their explanations are omitted as appropriate.

[0275] Figure 18 shows a view of the ground layer 531 portion of the raised substrate 502, as seen from a direction perpendicular to the surface of the raised substrate 502.

[0276] In this example, the inner portion of the raised substrate 502, including the area where the through-hole 507 is formed, is surrounded by a ground layer 531. The ground layer 531 consists of a plain ground wiring pattern, and capacitance is formed by the ground layer 531.

[0277] In this particular example, almost all of the inner portion of the raised substrate 502, excluding the through-holes 507, consists of wiring patterns that make up the ground layer 531. As a result, the area of ​​the ground layer 531 is wider (larger) than in the example shown in Figure 17.

[0278] Because a larger capacitance is formed by this plain ground layer 531, the power supplied from the semiconductor substrate 21 to the millimeter-wave module 505 can be made more stable. Note that the wiring pattern that forms the capacitance to stabilize the power supply does not have to be the ground layer 531, as long as it is formed on the raised substrate 502.

[0279] <Modification 2 of the 11th embodiment> <Example of sensor module configuration> Furthermore, it is also conceivable that the image sensor 22 in the sensor module 11 may be used as a distance measuring sensor.

[0280] Specifically, by combining the image sensor 22 with a light source such as an LD (Laser Diode) or LED (Light Emitting Diode), distance measurement using the iToF (indirect Time of Flight) method can be achieved.

[0281] In such cases, the sensor module 11 is configured as shown in Figure 19, for example. Note that in Figure 19, parts corresponding to those in Figure 17 are denoted by the same reference numerals, and their explanations are omitted as appropriate.

[0282] In the sensor module 11 shown in Figure 19, an image sensor 22 is mounted on a semiconductor substrate 21, and a frame 41 and a cover glass 42 are provided around the image sensor 22 in the same arrangement as in the example in Figure 17.

[0283] Furthermore, a support substrate 502 is placed near the image sensor 22 on the semiconductor substrate 21, and a substrate 503 on which the RFIC 504 and antenna section 23 are mounted (placed) is mounted on the support substrate 502.

[0284] Furthermore, a light source 561 consisting of an LD or LED is mounted near the base plate 502 on the semiconductor substrate 21. In particular, on the semiconductor substrate 21, a millimeter-wave module 505 (substrate 503), i.e., the base plate 502, is positioned between the light source 561 and the image sensor 22.

[0285] A frame 562 is provided on the semiconductor substrate 21 so as to surround the light source 561, and a plate-shaped cover glass 563 is provided on the upper part of the frame 562 so as to face the light source 561. The cover glass 563 functions as a protective cover (protective member) for protecting the light source 561 and for dust and drip protection.

[0286] When measuring distance in the iToF method, distance measurement light is irradiated from the light source 561 toward the subject in front, and the reflected light of the distance measurement light is received by the image sensor 22. As a result, based on the signal obtained by the image sensor 22, the distance to the subject is calculated.

[0287] At this time, if the light source 561 is arranged adjacent to the image sensor 22, there is a risk that the light output from the light source 561 directly enters the image sensor 22 and affects the distance measurement.

[0288] Therefore, in the sensor module 11 shown in FIG. 19, a millimeter-wave module 505 and a raised substrate 502 are arranged between the light source 561 and the image sensor 22, and separation of the light used for distance measurement in the iToF method is realized. That is, among the light output from the light source 561, the light directly heading toward the image sensor 22 is blocked by the millimeter-wave module 505 and the raised substrate 502. Therefore, it is possible to prevent the light output from the light source 561 from directly entering the image sensor 22.

[0289] Moreover, in this case, since it is possible to prevent the light from the light source 561 from directly entering the image sensor 22, the light source 561, the millimeter-wave module 505, and the image sensor 22 can be arranged close to each other.

[0290] Therefore, it is possible to miniaturize the sensor module 11, and it is also possible to implement many functions such as a distance measurement function using millimeter waves and a distance measurement function in the iToF method in the sensor module 11, that is, to achieve multifunctionality.

[0291] <12th Embodiment> <Configuration Example of Sensor Module> By the way, the dielectric constant of the semiconductor substrate 21 constituting the sensor module 11 is larger than the dielectric constant of air, and electromagnetic waves propagate easily inside the dielectric.

[0292] For example, in the example shown in Figure 1, the image sensor 22 is mounted directly on the semiconductor substrate 21, and air is present around the semiconductor substrate 21.

[0293] Therefore, electromagnetic waves (millimeter waves) generated by the antenna section 23, i.e., unwanted radiation, may pass through the semiconductor substrate 21 and directly enter the silicon (Si) portion of the image sensor 22, potentially affecting the characteristics related to image capture by the image sensor 22. In particular, it has been confirmed by actual measurements that electromagnetic waves propagate within the semiconductor substrate in high-frequency bands around 80 Hz, such as those found in automotive radar.

[0294] Furthermore, when the image sensor 22 and frame 41 are mounted on the semiconductor substrate 21 by adhesive, it may not be possible to obtain sufficient adhesive strength, or the characteristics of the millimeter-wave radar mounted on the same semiconductor substrate 21 may be affected.

[0295] For example, the pattern portion of the patch antenna constituting the antenna section 23 should be made of materials specialized for high frequencies, such as fluorine-containing materials, liquid crystal materials, or non-polar resin materials. However, if the wiring layers 32 and 33 of the semiconductor substrate 21 are formed in accordance with the structure of the image sensor 22, it will have a significant impact on the high-frequency characteristics of the millimeter-wave radar, such as energy loss and radiation characteristics. In other words, if the semiconductor substrate 21 is made to be easy to mount the image sensor 22 on, the high-frequency characteristics of the millimeter-wave radar may deteriorate. This has a particularly significant impact on millimeter-wave energy loss in high-frequency bands around 80 Hz, such as in automotive radar.

[0296] On the other hand, if the configuration of the semiconductor substrate 21 is made specifically for mounting a millimeter-wave radar, i.e., for forming a patch antenna, without considering the ease of mounting the image sensor 22, there is a risk that the optical characteristics and other characteristics related to the image sensor 22 may be affected.

[0297] Specifically, for example, if the configuration of the semiconductor substrate 21 is specialized for forming a patch antenna, there is a risk that warping or bending may occur in the mounting portion of the image sensor 22 on the semiconductor substrate 21 depending on the operating environment.

[0298] Therefore, as shown in Figure 20, for example, an interposer 591, which is a substrate with a substrate configuration specialized for mounting the image sensor 22, may be mounted by bumps on a semiconductor substrate 21 with a substrate configuration specialized for forming the antenna portion 23. In Figure 20, the same reference numerals are used for parts corresponding to those in Figure 1, and their explanations are omitted as appropriate.

[0299] In the sensor module 11 shown in Figure 20, an antenna portion 23 is formed on the semiconductor substrate 21. The antenna portion 23 may be covered by a hollow cover, such as a radome.

[0300] The interposer 591 is mounted on the semiconductor substrate 21 near the antenna portion 23 by multiple bumps (solder), including bump 592. By mounting with bumps, the interposer 591 can be mounted on the semiconductor substrate 21 with higher strength (adhesive strength) than by adhesive mounting.

[0301] An image sensor 22 is mounted on the side of the interposer 591 opposite to the semiconductor substrate 21. In other words, the image sensor 22 and the semiconductor substrate 21 are electrically connected by the interposer 591 positioned between them.

[0302] Furthermore, a frame 41 and a cover glass 42 are provided on the surface of the interposer 591 in the same arrangement as in the example in Figure 1, surrounding the image sensor 22.

[0303] Inside the interposer 591, planar ground layers 593-1 and 593-2 are formed.

[0304] In the following, when there is no need to distinguish between ground layer 593-1 and ground layer 593-2, they will simply be referred to as ground layer 593. Furthermore, the interposer 591 may have one ground layer 593 or three or more. Moreover, the interposer 591 may not have a ground layer 593 at all.

[0305] In the example shown in Figure 20, the substrate configuration of the semiconductor substrate 21 is specifically designed for the formation of the antenna portion 23. That is, for example, the semiconductor substrate 21 is made of a material suitable for the formation of the antenna portion 23.

[0306] Furthermore, the substrate configuration of the interposer 591 is specifically designed for mounting the image sensor 22. That is, for example, the interposer 591 is made of a material that has a coefficient of thermal expansion (CTE) such that sufficient adhesive strength can be obtained when the image sensor 22 is mounted by adhesive, and that the characteristics of the image sensor 22 are less likely to be affected when warping or other deformation occurs in the image sensor 22.

[0307] Therefore, for example, the linear thermal expansion coefficients of the semiconductor substrate 21 and the interposer 591 are different. In such cases, the warping that occurs in the image sensor 22 can be adjusted (mitigated) by the interposer 591, regardless of the physical properties of the semiconductor substrate 21.

[0308] In this way, by mounting an interposer 591 on which the image sensor 22 is directly mounted on the semiconductor substrate 21 on which the antenna section 23 is formed, the substrate configurations of the semiconductor substrate 21 and the interposer 591 can be made different. This suppresses the degradation of the high-frequency characteristics of the millimeter-wave radar, while simultaneously suppressing the degradation of the characteristics related to the image sensor 22.

[0309] Furthermore, in the example shown in Figure 20, the interposer 591 is mounted on the semiconductor substrate 21 by bumps. In other words, a gap (air layer) is provided between the interposer 591 and the semiconductor substrate 21.

[0310] Therefore, it is possible to suppress the propagation of electromagnetic waves (millimeter waves) generated in the antenna unit 23 through the semiconductor substrate 21 to the interposer 591, i.e., the image sensor 22. In other words, interference of electromagnetic waves generated in the antenna unit 23 with the image sensor 22 is suppressed, thereby suppressing a deterioration in the characteristics of the image sensor 22. Specifically, for example, power supply fluctuations in the image sensor 22 can be suppressed, and the image sensor 22 can be driven more stably.

[0311] Furthermore, since a ground layer 593 is formed on the interposer 591, the propagation of electromagnetic waves (millimeter waves) generated in the antenna section 23 to the image sensor 22 can be further suppressed.

[0312] Furthermore, considering the suppression of electromagnetic wave interference with the image sensor 22, the interposer 591 is preferably made of a substrate made of a material with a low dielectric constant, such as an organic substrate. For example, the dielectric constant of the interposer 591 is made lower than that of the semiconductor substrate 21.

[0313] <Modification 1 of the 12th embodiment> <Example of sensor module configuration> To further suppress the propagation of unwanted radiation (electromagnetic waves) generated by the antenna section 23 to the image sensor 22, the bumps connected to ground among the bumps for mounting the interposer 591 may be arranged at intervals of half a wavelength of the radiation frequency of the antenna section 23.

[0314] In such cases, the sensor module 11 is configured as shown in Figure 21, for example. Note that in Figure 21, parts corresponding to those in Figure 20 are denoted by the same reference numerals, and their explanations are omitted as appropriate.

[0315] In the sensor module 11 shown in Figure 21, the antenna unit 23 and the interposer 591 are arranged on the semiconductor substrate 21, similar to the case in Figure 20, and the image sensor 22 is mounted on the interposer 591.

[0316] Furthermore, among the multiple bumps for mounting the interposer 591 on the semiconductor substrate 21, there are multiple bumps connected to the ground (ground layer) within the semiconductor substrate 21 (hereinafter also referred to as ground bumps).

[0317] For example, in the example shown in Figure 21, bumps located near the antenna section 23, such as bump 621 and bumps aligned in the depth direction relative to bump 621, are designated as ground bumps. Bumps 592 and others may also be designated as ground bumps.

[0318] In particular, the multiple ground bumps are arranged at intervals of half a wavelength of the radiation frequency of the antenna section 23, that is, shorter than the wavelength of the millimeter waves radiated by the antenna section 23, preferably half the wavelength (half a wavelength).

[0319] By arranging multiple ground bumps in this manner, the propagation of unwanted radiation (electromagnetic waves) generated by the antenna section 23 to the interposer 591, i.e., the image sensor 22, can be further suppressed.

[0320] <Modification 2 of the 12th embodiment> <Example of sensor module configuration> Furthermore, in order to further suppress the propagation of unwanted radiation (electromagnetic waves) generated by the antenna section 23 to the image sensor 22, multiple vias may be provided that are spaced at intervals of half a wavelength of the radiation frequency of the antenna section 23.

[0321] In such cases, the sensor module 11 is configured as shown in Figure 22, for example. Note that in Figure 22, parts corresponding to those in Figure 21 are denoted by the same reference numerals, and their explanations are omitted as appropriate.

[0322] The sensor module 11 shown in Figure 22 has a configuration in which multiple vias, including via 651, are provided in addition to the sensor module 11 shown in Figure 21.

[0323] In the example shown in Figure 22, a via 651 is provided in the semiconductor substrate 21 at a position between the antenna section 23 and the interposer 591 (image sensor 22).

[0324] Via 651 is made of, for example, SIW (Substrate Integrated Waveguide), penetrates the semiconductor substrate 21, and is connected to the ground (ground layer) within the semiconductor substrate 21. Hereinafter, vias like via 651, which are provided within the semiconductor substrate 21 and connected to the ground within the semiconductor substrate 21, will also be referred to as ground vias.

[0325] The semiconductor substrate 21 has a plurality of ground vias, including via 651, formed on it, for example, as shown in Figure 23. Figure 23 is a view of the sensor module 11 from the top to the bottom of Figure 22, and parts in Figure 23 that correspond to those in Figure 22 are given the same reference numerals, and their explanations are omitted as appropriate.

[0326] In the example shown in Figure 23, multiple vias, including vias 651 and 681, are arranged in a vertical line as ground vias between the antenna section 23 and the interposer 591 (image sensor 22) within the semiconductor substrate 21.

[0327] In particular, the multiple ground vias are arranged at intervals of half a wavelength of the radiation frequency of the antenna section 23, similar to the case of the ground bump, that is, shorter than the wavelength of the millimeter waves radiated by the antenna section 23, preferably half the wavelength. The distance (spacing) between the ground vias and the ground bump may also be half a wavelength of the radiation frequency of the antenna section 23.

[0328] By arranging multiple ground vias in this manner, the propagation of unwanted radiation (electromagnetic waves) generated in the antenna section 23 to the interposer 591, i.e., the image sensor 22, can be further suppressed.

[0329] Figure 23 illustrates an example in which multiple ground vias are arranged in a single row between the antenna section 23 and the interposer 591. However, the arrangement is not limited to this; for example, multiple rows of ground vias may be provided, or the ground vias may be arranged so that they surround the interposer 591.

[0330] Furthermore, the embodiments of this technology are not limited to those described above, and various modifications are possible without departing from the spirit of this technology.

[0331] Furthermore, this technology can also be configured as follows:

[0332] (1) circuit board and A millimeter-wave antenna provided on the aforementioned substrate, An image sensor provided on the substrate and Equipped with, The antenna surface of the millimeter-wave antenna and the light-receiving surface of the image sensor are positioned at locations that are spatially separated from each other. Semiconductor equipment. (2) The antenna surface is positioned in a direction perpendicular to the substrate, at a location further away from the substrate than the image sensor. (1) The semiconductor device described above. (3) The millimeter-wave antenna comprises a first antenna formed on the substrate by patterning, and a second antenna formed on an antenna substrate positioned directly above the first antenna on the substrate. The second antenna is positioned in a direction perpendicular to the substrate, at a location further away from the substrate than the image sensor. The semiconductor device described in (1) or (2). (4) The image sensor is located within the space enclosed by the substrate and the antenna substrate. (3) Semiconductor device as described above. (5) The antenna substrate is formed from a material containing Si and O as raw materials. (4) The semiconductor device described above. (6) An air layer is formed between the first antenna and the second antenna. A semiconductor device as described in any one of items (3) through (5). (7) The millimeter-wave antenna is formed on the substrate by patterning. (1) The semiconductor device described above. (8) The substrate further comprises a frame member having an exposed portion that exposes the antenna surface, which is disposed on the substrate. (7) Semiconductor device as described above. (9) The frame member is conductive and is electrically connected to a ground provided on the substrate. (8) Semiconductor device as described above. (10) When viewed from a direction perpendicular to the surface of the substrate, the frame member is provided with a plurality of exposed portions arranged in a first direction and a second direction perpendicular to each other, and the exposed portions are square or circular in shape. The semiconductor device described in (8) or (9). (11) When viewed from a direction perpendicular to the surface of the substrate, the frame member is provided with a plurality of exposed portions arranged in a predetermined direction, and the exposed portions are rectangular in shape, elongated in a direction perpendicular to the predetermined direction. The semiconductor device described in (8) or (9). (12) The millimeter-wave antenna is a mounted antenna that is mounted on the substrate. The semiconductor device described in (1) or (2). (13) A conductive material is applied to the surface of the structure on the substrate provided between the image sensor and the millimeter-wave antenna that is on the side facing the millimeter-wave antenna. A semiconductor device as described in any one of items (1) through (3). (14) The conductive material is electrically connected to a ground provided on the substrate. Semiconductor device as described in (13). (15) The analog ground provided on the aforementioned substrate functions as an analog ground for the image sensor and an analog ground for millimeter-wave reflection. A semiconductor device as described in any one of items (1) through (14). (16) The aforementioned analog ground functions as a heat spreader, and a heat dissipation component is connected to the analog ground. (15) Semiconductor device as described above. (17) The analog or digital power supply provided on the aforementioned substrate functions as a power supply for the image sensor and a power supply for the millimeter-wave radar. A semiconductor device as described in any one of items (1) through (16). (18) The image sensor is flip-chip mounted on the side of the substrate opposite to the side on which the millimeter-wave antenna is provided. A heat dissipation member is connected to the image sensor and the millimeter-wave element arranged on the same plane as the image sensor. A semiconductor device as described in any one of items (1) through (3). (19) The image sensor is positioned between the transmitting antenna and the receiving antenna that constitute the millimeter-wave antenna. (1) The semiconductor device described above. (20) The aforementioned millimeter-wave antenna is provided, along with a module that generates an analog signal. A base plate is placed between the substrate and the module and has a plurality of through-holes formed on it. Furthermore, Each of the plurality of through-holes is a through-hole for transmitting input signals to the module, transmitting output signals from the module, or supplying power. (2) Semiconductor device as described above. (twenty one) The raised substrate has a ground wiring pattern formed on it that surrounds the plurality of through-holes. (20) Semiconductor device as described above. (twenty two) The raised substrate has a wiring pattern that forms a capacitance. The semiconductor device described in (20) or (21). (twenty three) The system further includes a light source that receives light from the image sensor and outputs light for distance measurement, On the aforementioned substrate, the raised substrate is positioned between the image sensor and the light source. A semiconductor device as described in any one of paragraphs (20) to (22). (twenty four) The circuit board further comprises an interposer mounted on the aforementioned substrate, The image sensor is mounted on the interposer, The millimeter-wave antenna is formed on the substrate. (1) The semiconductor device described above. (twenty five) A gap is provided between the interposer and the substrate. Semiconductor device as described in (24). (26) The linear thermal expansion coefficient of the interposer and the linear thermal expansion coefficient of the substrate are different. The semiconductor device described in (24) or (25). (27) The interposer has a planar ground layer formed therein. A semiconductor device as described in any one of paragraphs (24) to (26). (28) The multiple bumps for mounting the interposer onto the substrate include a ground bump connected to the ground of the substrate. The multiple ground bumps are arranged so as to be spaced at intervals shorter than the wavelength of the millimeter waves radiated from the millimeter-wave antenna. A semiconductor device as described in any one of paragraphs (24) to (27). (29) The substrate has a ground via formed on it that is connected to the ground of the substrate. Multiple ground vias are arranged so as to be spaced shorter than the wavelength of the millimeter waves radiated from the millimeter-wave antenna. A semiconductor device as described in any one of paragraphs (24) to (28). (30) circuit board and A millimeter-wave antenna provided on the aforementioned substrate, An image sensor provided on the substrate and Equipped with, The antenna surface of the millimeter-wave antenna and the light-receiving surface of the image sensor are positioned at locations that are spatially separated from each other. Semiconductor equipment electronic equipment. [Explanation of symbols]

[0333] 11 Sensor module, 21 Semiconductor substrate, 22 Image sensor, 23 Antenna section, 24-1 to 24-4, 24 Elements, 41 Frame, 42 Cover glass, 51 Transmitting antenna section, 52 Receiving antenna section, 81 Antenna section, 121 Antenna section, 131 Antenna substrate, 132 Transmitting antenna section, 133 Receiving antenna section, 191 Conductive material, 221 Frame member, 321 Antenna substrate, 361 Heat dissipation member, 391 Heat dissipation member, 502 Base plate, 505 Millimeter wave module, 506-1 to 506-3, 506 Ground layer, 507-1, 507-2, 507 Through-hole, 561 Light source, 591 Interposer, 651 Via

Claims

1. circuit board and A millimeter-wave antenna provided on the aforementioned substrate, An image sensor provided on the substrate and Equipped with, The antenna surface of the millimeter-wave antenna and the light-receiving surface of the image sensor are positioned at spatially separated locations. The antenna surface is positioned in a direction perpendicular to the substrate, at a location further away from the substrate than the image sensor. Semiconductor equipment.

2. The millimeter-wave antenna comprises a first antenna formed on the substrate by patterning, and a second antenna formed on an antenna substrate positioned directly above the first antenna on the substrate. The second antenna is positioned in a direction perpendicular to the substrate, at a location further away from the substrate than the image sensor. The semiconductor device according to claim 1.

3. The image sensor is located within the space enclosed by the substrate and the antenna substrate. The semiconductor device according to claim 2.

4. The antenna substrate is formed from a material containing Si and O as raw materials. The semiconductor device according to claim 3.

5. An air layer is formed between the first antenna and the second antenna. The semiconductor device according to claim 2.

6. The millimeter-wave antenna is a mounted antenna that is mounted on the substrate. The semiconductor device according to claim 1.

7. A conductive material is applied to the surface of the structure on the substrate provided between the image sensor and the millimeter-wave antenna that is on the side facing the millimeter-wave antenna. The semiconductor device according to claim 1.

8. The conductive material is electrically connected to a ground provided on the substrate. The semiconductor device according to claim 7.

9. The analog ground provided on the aforementioned substrate functions as an analog ground for the image sensor and an analog ground for millimeter-wave reflection. The semiconductor device according to claim 1.

10. The aforementioned analog ground functions as a heat spreader, and a heat dissipation component is connected to the analog ground. The semiconductor device according to claim 9.

11. The analog or digital power supply provided on the aforementioned substrate functions as a power supply for the image sensor and a power supply for the millimeter-wave radar. The semiconductor device according to claim 1.

12. The image sensor is flip-chip mounted on the side of the substrate opposite to the side on which the millimeter-wave antenna is provided. A heat dissipation member is connected to the image sensor and the millimeter-wave element arranged on the same plane as the image sensor. The semiconductor device according to claim 1.

13. The aforementioned millimeter-wave antenna is provided, along with a module that generates an analog signal. A base plate is placed between the substrate and the module and has a plurality of through-holes formed on it. Furthermore, Each of the plurality of through-holes is a through-hole for transmitting input signals to the module, transmitting output signals from the module, or supplying power. The semiconductor device according to claim 1.

14. The raised substrate has a ground wiring pattern formed on it that surrounds the plurality of through-holes. The semiconductor device according to claim 13.

15. The raised substrate has a wiring pattern that forms a capacitance. The semiconductor device according to claim 13.

16. The system further includes a light source that receives light from the aforementioned image sensor and outputs light for distance measurement, On the aforementioned substrate, the raised substrate is positioned between the image sensor and the light source. The semiconductor device according to claim 13.

17. circuit board and A millimeter-wave antenna provided on the aforementioned substrate, An image sensor provided on the substrate and Equipped with, The antenna surface of the millimeter-wave antenna and the light-receiving surface of the image sensor are positioned at spatially separated locations. The antenna surface is positioned in a direction perpendicular to the substrate, at a location further away from the substrate than the image sensor. Semiconductor equipment electronic equipment.

Images