Light-emitting diode package light-emitting height arrangement and related devices and methods

Abstract

Disclosed are light emitting diode (LED) packages, and more particularly, luminous height arrangements in LED packages, and related devices and methods. Disclosed are arrangements of LED packages, LED chips, and related devices that include various combinations of LED chip types, luminous materials, and / or cover structures that are arranged together while also providing substantially uniform luminous heights of corresponding luminous surfaces. LED chips may be configured with different heights or thicknesses that compensate for variations in luminous materials and / or cover structures utilized to provide different luminous colors. Corresponding LED packages and / or LED chips having different luminous colors may be assembled near one another while improving uniformity of luminous height.

Description

[Technical Field]

[0001]

[0001] This disclosure relates to light-emitting diode (LED) packages, and more particularly to emission height arrangements in LED packages, as well as related devices and methods. [Background technology]

[0002]

[0002] Solid-state lighting devices such as light-emitting diodes (LEDs) are increasingly used in both consumer and commercial applications. Advances in LED technology have resulted in highly efficient, mechanically robust, and long-lasting light sources. Consequently, modern LEDs enable a variety of new display applications and are increasingly being used in general lighting applications, often replacing incandescent and fluorescent light sources.

[0003]

[0003] An LED is a solid-state device that converts electrical energy into light and generally includes an active layer (or active region) of one or more semiconductor materials positioned between an inversely doped n-type layer and a p-type layer. When a bias is applied across the doped layers, holes and electrons are injected into one or more active layers, where they recombine to produce light such as visible light or ultraviolet light. An LED chip typically includes an active region, which may be made from, for example, silicon carbide, gallium nitride, gallium phosphide, indium phosphide, aluminum nitride, gallium arsenide-based materials, and / or organic semiconductor materials. Photons generated by the active region are emitted in all directions.

[0004]

[0004] Luminescent materials such as phosphors are placed in the light emission path of an LED emitter and may convert some of the light to different wavelengths. LED packages have been developed that can provide mechanical support, electrical connections, and encapsulation for LED emitters. The light emitted from the surface of an LED emitter usually interacts with various elements or surfaces and luminescent materials of the LED package before emission, which increases the possibility of light loss and potential non-uniformity of emission. Therefore, there can be challenges in producing high-quality light with desired emission characteristics while providing high luminous efficiency in the LED package.

[0005]

[0005] The technical field continues to seek improved LED and solid-state lighting devices that have desirable lighting characteristics and can overcome the challenges associated with conventional lighting devices. [Overview of the Initiative] [Means for solving the problem]

[0006]

[0006] The embodiments disclosed herein relate to light-emitting diode (LED) packages, more particularly to light-emitting height arrangements in LED packages, and related devices and methods. Arrangements of LED packages, LED chips, and related devices are disclosed, including various combinations of LED chip types, light-emitting materials, and / or cover structures arranged together, while also providing substantially uniform light-emitting heights with respect to the corresponding light-emitting surfaces. The LED chips may be configured with different heights or thicknesses to compensate for variations in the light-emitting materials and / or cover structures used to provide different light-emitting colors. Thus, LED packages and / or LED chips having different light-emitting colors may be assembled close to each other while improving uniformity of light-emitting heights.

[0007]

[0007] In one embodiment, the method comprises providing a first LED chip and a first light-emitting material layer defining a first color point, providing a second LED chip defining a second color point different from the first color point, and reducing the thickness of at least one of the first LED chip and the second LED chip such that the first emission height formed by the first LED chip and the first light-emitting material layer is within 100 microns (μm) of the second emission height of the second LED chip. In a particular embodiment, the first emission height is defined as the vertical distance from the mounting surface of the first LED package to the topmost emission surface of the first LED package, and the second emission height is defined as the vertical distance from the mounting surface of the second LED chip to the topmost emission surface of the second LED chip. In certain embodiments, the uppermost light-emitting surface of the first LED chip is defined on the uppermost surface of the first light-emitting material layer, and the uppermost light-emitting surface of the second LED chip is defined on the uppermost surface of the second LED chip. In certain embodiments, the thickness of the first LED chip is reduced by an amount corresponding to the thickness of the first light-emitting material layer. In certain embodiments, reducing the thickness of at least one of the first and second LED chips comprises reducing the thickness of the substrate of at least one of the first and second LED chips. In certain embodiments, the first light-emitting height is within 60 μm of the second light-emitting height. In certain embodiments, the first light-emitting height is within 30 μm of the second light-emitting height.

[0008]

[0008] In another embodiment, the method comprises providing a first LED chip and a first light-emitting material layer defining a first color point, providing a second LED chip and a second light-emitting material layer defining a second color point different from the first color point, and reducing the thickness of at least one of the first LED chip and the second LED chip such that a first light-emitting height formed by the first LED chip and the first light-emitting material layer is within 100 microns (μm) of a second light-emitting height formed by the second LED chip and the second light-emitting material layer. In a particular embodiment, the first light-emitting height is defined as the vertical distance from the mounting surface of the first LED chip to the uppermost light-emitting surface of the first LED chip, and the second light-emitting height is defined as the vertical distance from the mounting surface of the second LED chip to the uppermost light-emitting surface of the second LED chip. In certain embodiments, the uppermost light-emitting surface of the first LED chip is defined on the uppermost surface of the first light-emitting material layer, and the uppermost light-emitting surface of the second LED chip is defined on the uppermost surface of the second light-emitting material layer. In certain embodiments, reducing the thickness of at least one of the first LED chip and the second LED chip comprises reducing the thickness of the substrate of at least one of the first LED chip and the second LED chip. In certain embodiments, the first light-emitting height is within 60 μm of the second light-emitting height. In certain embodiments, the first light-emitting height is within 30 μm of the second light-emitting height.

[0009]

[0009] In another embodiment, the light-emitting device comprises a first LED package and a second LED package, the first LED package comprising a first submount, a first LED chip on the first submount, and a first light-emitting material layer on the first LED chip, the first LED chip and the first light-emitting material layer defining a first color point, the first light-emitting height being defined as the vertical distance from the mounting surface of the first LED package to the uppermost light-emitting surface of the first LED package, the second LED package comprising a second submount and a second LED chip on the second submount, the second LED chip defining at least partially a second color point different from the first color point, the second light-emitting height being defined as the vertical distance from the mounting surface of the second LED package to the uppermost light-emitting surface of the second LED package, and the first light-emitting height being within 100 microns (μm) of the second light-emitting height. In certain embodiments, the first luminescence height is within 60 μm of the second luminescence height. In certain embodiments, the first luminescence height is within 30 μm of the second luminescence height. In certain embodiments, the uppermost luminescence surface of the first LED package is defined on the uppermost surface of the first luminescent material layer, and the uppermost luminescence surface of the second LED package is defined on the uppermost surface of the second LED chip. The light-emitting device may further comprise a second luminescent material layer on the second LED chip, the second LED chip and the second luminescent material layer defining a second color point, the uppermost luminescence surface of the first LED package is defined on the uppermost surface of the first luminescent material layer, and the uppermost luminescent surface of the second LED package is defined on the uppermost surface of the second luminescent material layer. In certain embodiments, the first luminescent material layer is provided as a coating on the first LED chip. In certain embodiments, the first light-emitting material layer is located on or inside a chip cover attached to the first LED chip.

[0010]

[0010] In another embodiment, the LED package comprises a submount, a first LED chip on the submount, and a first light-emitting material layer on the first LED chip, wherein the first LED chip and the first light-emitting material layer define a first color point, and the first light-emitting height is defined as the vertical distance from the mounting surface of the first LED chip to the uppermost light-emitting surface of the first LED chip, and a second LED chip on the submount, wherein the second LED chip defines at least partially a second color point different from the first color point, and the second light-emitting height is defined as the vertical distance from the mounting surface of the second LED chip to the uppermost light-emitting surface of the second LED chip, and the first light-emitting height is within 100 μm of the second light-emitting height. In a particular embodiment, the first light-emitting height is within 60 μm of the second light-emitting height. In a particular embodiment, the first light-emitting height is within 30 μm of the second light-emitting height. In certain embodiments, the uppermost light-emitting surface of the first LED chip is defined on the uppermost surface of the first light-emitting material layer, and the uppermost light-emitting surface of the second LED chip is defined on the uppermost surface of the second LED chip. The LED package may further comprise a second light-emitting material layer on the second LED chip, and the second LED chip and the second light-emitting material layer define a second color point, with the uppermost light-emitting surface of the first LED chip being defined on the uppermost surface of the first light-emitting material layer, and the uppermost light-emitting surface of the second LED chip being defined on the uppermost surface of the second light-emitting material layer. In certain embodiments, the first light-emitting material is provided as a coating on the first LED chip. In certain embodiments, the first light-emitting material layer is disposed on or within a chip cover attached to the first LED chip.

[0011]

[0011] In another embodiment, further advantages can be obtained by combining any of the above embodiments individually or together, and / or by combining the various individual embodiments and features described herein. Any of the various features and elements disclosed herein can be combined with one or more other disclosed features and elements unless otherwise indicated herein.

[0012]

[0012] Those skilled in the art will recognize the scope of the present disclosure and understand its additional aspects after reading the following detailed description of the preferred embodiments in connection with the accompanying drawings.

[0013] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate some aspects of the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

Brief Description of the Drawings

[0013] [Figure 1]

[0014] FIG. 1 is a top view of a light emitting diode (LED) package including an LED chip mounted on a submount in accordance with the principles of the present disclosure. [Figure 2]

[0015] FIG. 1 is a cross-sectional view of the LED package taken along cross-section line A-A of FIG. 1 of the LED chip including a disposed light emitting material layer. [Figure 3]

[0016] FIG. 2 is a cross-sectional view of another arrangement of the LED package taken along cross-section line A-A of FIG. 1, providing a different emission color from the LED package of FIG. 2. [Figure 4]

[0017] FIG. 3 is a cross-sectional view of another arrangement of the LED package taken along cross-section line A-A of FIG. 1, providing a different emission color from the LED packages of FIGS. 2 and 3. [Figure 5]

[0018] FIG. 4 is a cross-sectional view of a light emitting device including each of the LED packages of FIGS. 2 to 4. [Figure 6A]

[0019] FIG. 5 is a cross-sectional view of an LED chip illustrating the difference in height or thickness between respective LED chip substrates, which may be used to improve the uniformity of the emission height in accordance with the principles of the present disclosure. [Figure 6B] FIG. 6 is a cross-sectional view of an LED chip illustrating the difference in height or thickness between respective LED chip substrates, which may be used to improve the uniformity of the emission height in accordance with the principles of the present disclosure. [Figure 6C]This is a cross-sectional view of an LED chip illustrating a difference in height or thickness between individual LED chip substrates, which may be used to improve uniformity of light emission height according to the principles of this disclosure. [Figure 7A]

[0020] This is a top view of an LED package in which multiple LED chips are assembled in close proximity to each other on a submount with improved uniformity of light emission height. [Figure 7B]

[0021] This is a cross-sectional view of an LED package along the cross-sectional line 7B-7B in Figure 7A, which includes a first LED chip having a first light-emitting material and a second LED chip having a second light-emitting material. [Figure 7C]

[0022] This is a cross-sectional view of the LED package along the cross-sectional line 7C-7C in Figure 7A, including the second and third LED chips. [Figure 7D]

[0023] This is a cross-sectional view of the LED package along the section line 7D-7D in Figure 7A, including the third and fourth LED chips. [Figure 8]

[0024] This figure illustrates an exemplary manufacturing sequence for improving the uniformity of light emission height between a first LED chip containing light-emitting material and a second LED chip. [Figure 9]

[0025] This figure illustrates another exemplary manufacturing sequence for improving the uniformity of light emission height between a first LED chip containing a first light-emitting material and a second LED chip containing a second light-emitting material. [Modes for carrying out the invention]

[0014]

[0026] The embodiments described below provide the information necessary to enable those skilled in the art to carry out the embodiments and illustrate the best way to carry them out. By reading the following description with reference to the accompanying drawings, those skilled in the art will understand the concepts of this disclosure and recognize applications of these concepts not specifically addressed herein. It should be understood that these concepts and applications are included within the scope of this disclosure and the accompanying claims.

[0015]

[0027] In this specification, terms such as "first," "second," etc., may be used to describe various elements, but it will be understood that these elements should not be limited by these terms. These terms are used solely to distinguish one element from another. For example, without departing from the scope of this disclosure, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element. As used herein, the terms "and / or" include any one or more and all combinations of the relevant enumerated items.

[0016]

[0028] When an element such as a layer, region, or substrate is described as being "on top of" or "extending above" another element, it will be understood that the element may be directly above or able to extend directly above the other element, or there may be an intervening element. In contrast, when an element is described as being "directly above" or extending directly above another element, there is no intervening element. Similarly, when an element such as a layer, region, or substrate is described as being "above" or "extending above" another element, it will be understood that the element may be directly above or able to extend directly above the other element, or there may be an intervening element. In contrast, when an element is described as being "directly above" or extending directly above another element, there is no intervening element. Also, when an element is described as being "connected" or "bonded" to another element, it will be understood that the element may be directly connected to or able to bond to the other element, or there may be an intervening element. In contrast, when an element is said to be "directly connected" or "directly coupled" to another element, there is no intervening element.

[0017]

[0029] In this specification, relative terms such as “down,” “up,” “above,” “downward,” “horizontal,” or “vertical” may be used to describe the relationship between one element, layer, or region and another, as illustrated in the figures. It will be understood that these terms and the terms discussed above are intended to encompass different orientations of the device, in addition to the orientation shown in the figures.

[0018]

[0030] The terms used herein are for the sole purpose of describing specific embodiments and are not intended to limit the disclosure. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural form unless the context clearly indicates otherwise. Furthermore, the terms “equipped,” “equipped,” “contains,” and / or “contains” as used herein identify the presence of a described feature, complete, step, action, element, and / or component, but it will be understood that they do not exclude the presence or addition of one or more other features, complete, step, action, element, component, and / or group thereof.

[0019]

[0031] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as those generally understood by those skilled in the art to the extent of this disclosure. Furthermore, terms used herein should be interpreted as having meanings consistent with their meanings in the context of this specification and related art, and should not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0020]

[0032] Embodiments are described herein with reference to schematic drawings of embodiments of the present disclosure. Therefore, the actual dimensions of layers and elements may differ, and variations from the shapes shown in the drawings are expected, for example, as a result of manufacturing techniques and / or tolerances. For example, areas illustrated or described as squares or rectangles may have rounded or curved features, and areas illustrated as straight lines may have some irregularities. Thus, the areas illustrated in the drawings are schematic, and the shapes of those areas are not intended to illustrate the exact shapes of areas in the device, nor are they intended to limit the scope of the disclosure. In addition, the size of structures or areas may be exaggerated for illustrative purposes compared to other structures or areas, and are therefore provided to illustrate a general structure of the subject matter of the present invention, and may or may not be drawn to scale. Elements common to both drawings may be indicated herein by common element numbers and may not be described again later.

[0021]

[0033] The embodiments disclosed herein relate to light-emitting diode (LED) packages, more particularly to light-emitting height arrangements in LED packages, and related devices and methods. Disclosed are arrangements of LED packages, LED chips, and related devices, including various combinations of LED chip types, light-emitting materials, and / or cover structures arranged together, while also providing substantially uniform light-emitting heights with respect to the corresponding light-emitting surfaces. The LED chips may be configured with different heights or thicknesses to compensate for variations in the light-emitting materials and / or cover structures used to provide different light-emitting colors. In this way, LED packages and / or LED chips having different light-emitting colors may be assembled in close proximity to each other to improve uniformity of light-emitting height.

[0022]

[0034] Before delving into the specific details of various aspects of this disclosure, an overview of the various elements that may be included in the exemplary LEDs of this disclosure is provided for context. An LED chip typically comprises an active LED structure or region which may have many different semiconductor layers arranged in different ways. The manufacturing and operation of LEDs and their active structures are generally known in the art and will be briefly discussed herein. The layers of an active LED structure can be manufactured using known processes which have suitable processes, such as manufacturing using metal-organic chemical vapor deposition. The layers of an active LED structure may comprise many different layers, and generally may comprise an active layer sandwiched between n-type and p-type oppositely doped epitaxial layers, all of which are formed in a continuous manner on a growth substrate. The active LED structure is understood to also include additional layers and elements, but is not limited to, buffer layers, nucleation layers, superlattice structures, undoped layers, cladding layers, contact layers, current diffusion layers, photoextraction layers and elements. The active layer may comprise a single quantum well, multiple quantum wells, a double heterostructure, or a superlattice structure.

[0023]

[0035] Active LED structures can be manufactured from different material systems, some of which are Group III nitride-based. Group III nitrides refer to semiconductor compounds formed between nitrogen (N) and elements of Group III of the periodic table, typically aluminum (Al), gallium (Ga), and indium (In). Gallium nitride (GaN) is a common binary compound. Group III nitrides also refer to ternary and quaternary compounds such as aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), and aluminum indium gallium nitride (AlInGaN). In the case of Group III nitrides, silicon (Si) is a common n-type dopant, and magnesium (Mg) is a common p-type dopant. Therefore, the active layer, n-type layer, and p-type layer may include one or more layers of GaN, AlGaN, InGaN, and AlInGaN, either undoped or doped with Si or Mg, in the case of Group III nitride-based material systems. Other material systems include silicon carbide (SiC), organic semiconductor materials, and other Group III-V systems such as gallium phosphide (GaP), gallium arsenide (GaAs), indium phosphide (InP), and related compounds.

[0024]

[0036] Active LED structures may be grown on growth substrates that can contain many materials, including sapphire, SiC, aluminum nitride (AlN), GaN, GaAs, glass, or Si. SiC has certain advantages over other substrates, such as closer crystal lattice matching with group III nitrides, resulting in high-quality group III nitride films. SiC also has very high thermal conductivity, so the total power output of group III nitride devices on SiC is not limited by the thermal dissipation of the substrate. Sapphire is another common substrate for group III nitrides and also has certain advantages, such as low cost, established manufacturing processes, and excellent light-transmitting optical properties.

[0025]

[0037] Different embodiments of the active LED structure can emit light of different wavelengths depending on the composition of the active layer, n-type layer, and p-type layer. In some embodiments, the active LED structure emits blue light with a peak wavelength range of approximately 430 nanometers (nm) to 480 nm. In other embodiments, the active LED structure emits green light with a peak wavelength range of 500 nm to 570 nm. In yet another embodiment, the active LED structure emits red light with a peak wavelength range of 600 nm to 650 nm. In certain embodiments, the active LED structure may be configured to emit light outside the visible spectrum, including one or more portions of the ultraviolet (UV) spectrum. The UV spectrum is typically divided into three wavelength range categories, indicated by the letters A, B, and C. Thus, UV-A light is typically defined as having a peak wavelength range of 315 nm to 400 nm, UV-B as typically defined as having a peak wavelength range of 280 nm to 315 nm, and UV-C as typically defined as having a peak wavelength range of 100 nm to 280 nm. UV LEDs are particularly important for use in applications related to the disinfection of microorganisms in air, water, and surfaces. For other applications, UV LEDs may be provided with one or more light-emitting materials to create an LED package with aggregate emission that has a broad spectrum and improved color quality for visible light applications.

[0026]

[0038] The LED chip may also be covered with one or more light-emitting materials (also referred to here as emitters), such as phosphors, so that at least a portion of the light from the LED chip is absorbed by one or more emitters and converted into one or more different wavelength spectra according to the characteristic emission from one or more emitters. In this regard, at least one emitter that receives at least a portion of the light generated by the LED light source may re-emit light having a different peak wavelength than the LED light source. The LED light source and one or more light-emitting materials may be selected so that the combined output of them is light having one or more desired properties such as color, color point, intensity, and spectral density. In certain embodiments, the collective emission of the LED chip may optionally be combined with one or more light-emitting materials to provide cool white, neutral white, or warm white light, such as in a color temperature range of 2500 Kelvin (K) to 10,000 K. In certain embodiments, light-emitting materials having cyan, green, amber, yellow, orange, and / or red peak wavelengths may be used. In certain embodiments, a combination of an LED chip and one or more light-emitting elements (e.g., phosphors) emits a combination of substantially white light. The one or more phosphors may be yellow (e.g., YAG:Ce), green (e.g., LuAg:Ce), and red (e.g., Ca i-x-y Sr x EU y This may include AlSiN3) light-emitting phosphors and combinations thereof. In other embodiments, the LED chip and the corresponding light-emitting material may be configured to emit primarily light converted from the light-emitting material, resulting in collective emission containing little to no perceptible light corresponding to the LED chip itself.

[0027]

[0039] The luminescent materials described herein may be one or more of the following: phosphors, scintillators, luminescent inks, quantum dot materials, dayglow tapes, etc., or may include them. The luminescent material may be provided by any suitable means, such as direct coating on one or more surfaces of an LED, dispersion in a sealing material configured to cover one or more LEDs, and / or coating on one or more optical or support elements (e.g., by powder coating, inkjet printing, etc.). In certain embodiments, the luminescent material may be down-converted or up-converted, and combinations of both down-converted and up-converted materials may be provided. In certain embodiments, several different (e.g., different compositions) luminescent materials arranged to produce different peak wavelengths may be arranged to receive light from one or more LED chips. One or more luminescent materials may be provided in various configurations on one or more parts of an LED chip. In certain embodiments, the luminescent material may be provided on one or more surfaces of an LED chip, while other surfaces of such an LED chip may not be luminescent. In certain embodiments, the top surface of the LED chip may include a light-emitting material, while one or more sides of the LED chip may be free of such material. In certain embodiments, all or substantially all outer surfaces of the LED chip (e.g., other than the contact definition surface or mounting surface) may be coated or covered with one or more light-emitting materials. In certain embodiments, the one or more light-emitting materials may be distributed substantially uniformly on or above one or more surfaces of the LED chip. In other embodiments, the one or more light-emitting materials may be distributed non-uniformly with respect to one or more of the material composition, concentration, and thickness on or above one or more surfaces of the LED chip. In certain embodiments, the packing density of the one or more light-emitting materials may vary on or between one or more outer surfaces of the LED chip.In certain embodiments, one or more light-emitting materials may be patterned on one or more surfaces of the LED chip to include one or more stripes, dots, curves, or polygonal shapes. In certain embodiments, multiple light-emitting materials may be arranged in different separate regions or layers on or above the LED chip.

[0028]

[0040] In certain embodiments, one or more light-emitting materials may be provided as at least part of a wavelength conversion element or cover structure provided above the LED chip. The wavelength conversion element or cover structure may include a support element and one or more light-emitting materials provided by any suitable means, such as coating the surface of the support element or incorporating the light-emitting material within the support element. In some embodiments, the support element may be composed of a transparent material, a translucent material, or a light-transmitting material such as sapphire, SiC, silicone, and / or glass (e.g., borosilicate and / or fused silica). The wavelength conversion elements and cover structures of this disclosure may be formed from a bulk material that is optionally patterned and then individualized. In certain embodiments, patterning may be performed by an etching process (e.g., wet etching or dry etching) or by another process that modifies the surface, such as a laser or saw. In certain embodiments, the wavelength conversion elements and cover structures may be thinned before or after the patterning process. In certain embodiments, the wavelength conversion elements and cover structures may have a substantially planar upper surface corresponding to the light-emitting region of the LED package.

[0029]

[0041] The wavelength conversion element and cover structure may be attached to one or more LED chips, for example, using a layer of transparent adhesive. In certain embodiments, the layer of transparent adhesive may contain silicone having a refractive index in the range of about 1.3 to about 1.6, which is lower than the refractive index of the LED chip on which the wavelength conversion element is located. In various embodiments, the wavelength conversion element may comprise a configuration such as an arrangement of a glass phosphor or ceramic phosphor plate. The arrangement of a glass phosphor or ceramic phosphor plate may be formed by mixing phosphorescent particles with glass frit or a ceramic material, pressing the mixture into a planar shape, and firing or sintering the mixture to form a cured structure that can be cut or separated into individual wavelength conversion elements.

[0030]

[0042] As used herein, a layer or region of an emitting device may be considered “transparent” if at least 80% of the light that strikes the layer or region passes through the layer or region and exits. Furthermore, as used herein, a layer or region of an LED is considered “reflective,” or embodies a “mirror” or “reflector,” if at least 80% of the light that strikes the layer or region is reflected. In some embodiments, the light emission comprises visible light, such as blue and / or green LEDs, with or without the emitting material. In other embodiments, the light emission may comprise invisible light. For example, in the case of GaN-based blue and / or green LEDs, silver (Ag) may be considered a reflective material (e.g., at least 80% reflectivity). In the case of UV LEDs, appropriate materials may be selected to achieve, in some embodiments, high reflectivity and / or, in some embodiments, low absorptivity, as desired. In certain embodiments, a “light-transmitting” material may be configured to transmit at least 50% of the light emission at the desired wavelength.

[0031]

[0043] This disclosure can be useful for LED chips having various shapes, such as vertical and horizontal shapes. Vertical LED chips typically include an anode and a cathode on opposite sides or surfaces of the LED chip. Horizontal LED chips typically include both an anode and a cathode on the same side of the LED chip opposite to a substrate, such as a growth substrate. In certain embodiments, a horizontal LED chip may be mounted on a submount of an LED package, with the anode and cathode on the surface of the LED chip opposite the submount. In this configuration, wire bonds may be used to provide electrical connections between the anode and cathode. In other embodiments, a horizontal LED chip may be flip-chip mounted on the surface of a submount of an LED package, with the anode and cathode on the surface of an active LED structure adjacent to the submount. In this configuration, electrical traces or patterns may be provided on the submount to provide electrical connections between the anode and cathode of the LED chip. In a flip-chip configuration, the active LED structure is located between the LED chip substrate and the LED package submount. Therefore, light emitted from the active LED structure may pass through the substrate in the desired emission direction. In other embodiments, the active LED structure may be coupled to a carrier submount, and the growth substrate may be removed so that light is emitted from the active LED structure without passing through the growth substrate.

[0032]

[0044] According to embodiments of this disclosure, an LED package may include one or more elements such as a light-emitting material, a encapsulant, a light-altering material, a lens, and electrical contacts, on which one or more LED chips are provided. In certain embodiments, the LED package may include a support member such as a submount or lead frame. Suitable materials for submounts include, but are not limited to, ceramic materials such as aluminum oxide, alumina, AlN, or organic insulators such as polyimide (PI) or polyphthalamide (PPA). In other embodiments, the submount may comprise a printed circuit board (PCB), sapphire, Si, or other suitable material. In the PCB embodiment, different PCB types may be used, such as a standard FR-4 PCB, a metal core PCB, or other types of PCBs. In a further embodiment, the support structure may embody a lead frame structure. Light-altering material may be placed within the LED package to reflect or otherwise direct light from one or more LED chips to a desired emission direction or pattern.

[0033]

[0045] The light-modifying materials used herein may include many different materials, including light-reflective materials that reflect or direct light, light-absorbing materials that absorb light, and materials that act as thixotropic agents. The term “light-reflective” as used herein refers to a material or particle that reflects, refracts, scatters, or directs light. In the case of light-reflective materials, the light-modifying material may include at least one of fused silica, fumed silica, titanium dioxide (TiO2), or metal particles suspended in a binder such as silicone or epoxy. In certain embodiments, the particles may have an index, i.e., refractive index, configured to refract light in a desired direction. In certain embodiments, light-reflective particles may also be referred to as light-scattering particles. The weight ratio of light-reflective or scattering particles to the binder may range from about 0.15:1 to about 0.5:1, or from about 0.5:1 to about 1:1, or from about 1:1 to about 2:1, depending on the desired viscosity before curing. In the case of light-absorbing materials, the light-modifying material may include at least one of carbon, silicon, or metal particles suspended in a binder such as silicone or epoxy. The light-reflective and light-absorbing materials may comprise nanoparticles. In certain embodiments, the light-modifying material may have a substantially white color to reflect and direct light. In other embodiments, the light-modifying material may have a substantially opaque color, such as black or gray, to absorb light and enhance contrast. In certain embodiments, the light-modifying material comprises both a light-reflective material and a light-absorbing material suspended in a binder.

[0034]

[0046] LED packages have been developed that cluster multiple LED chips together to increase light output and / or emit multicolor and / or peak wavelength light in a single LED package. The relative size or area of ​​the individual LED chips within the LED package may be selected according to the desired luminous intensity and profile. In certain embodiments, the LED chips within the LED package may have small sizes such as 0.5 mm × 0.5 mm and / or large sizes such as 2 mm × 2 mm, or other ranges from 0.5 mm × 0.5 mm to 1 mm × 1 mm. In certain embodiments, the longest lateral dimension of each LED chip may be in the range of 0.5 mm to 2 mm, or 1 mm to 2 mm, or 0.5 mm to 1 mm. In ranges where at least one dimension is 0.5 mm or larger, the LED chips may be very suitable for providing high output in a compact footprint.

[0035]

[0047] In multicolor LED applications, a device may be formed in which multiple LED packages of different emission colors are mounted in close proximity to each other on an underlying support element such as a printed circuit board. In other multicolor LED applications, multiple individually formed LED chips may be grouped within a single LED package. In either case, individually formed LED chips may differ in size, shape, emission profile, and / or voltage requirements, especially for LED chips emitting light of different peak wavelengths. Such variations can lead to non-uniform emission, particularly when various LED chips of different heights are arranged in close proximity to each other in individual LED packages or within a common LED package. When such variations exist, the emission height of the collective emission surface formed by multiple LED chips may vary, leading to undesirable emission non-uniformity. According to aspects of this disclosure, arrangements of LED packages, LED chips, and associated devices are provided in which different combinations of LED chip types, light-emitting materials, and cover structures are arranged together, also providing substantially uniform emission heights for the collective emission surface.

[0036]

[0048] Figure 1 is a top view of an LED package 10 including an LED chip 12 mounted on a submount 14 according to the principles of this disclosure. Several metal traces 16-1 to 16-2 are arranged on the first face 14' of the submount 14 to provide electrical connections to the LED chip 12. The metal traces 16-1 to 16-2 may include any number of metals and / or metal layers, such as copper (Cu), nickel (Ni), palladium (Pd), gold (Au), or alloys thereof, patterned on the submount 14. Depending on the orientation of the LED chip 12, several wire bonds 18 may be employed to electrically connect the LED chip 12 to at least one of the metal traces 16-1 to 16-2. In certain embodiments, an electrical overstress device 20 may be provided on the metal trace 16-2 to provide electrical overload protection to the LED chip 12. The electrical overload device 20 may embody an electrostatic discharge chip and / or a Zener diode, and in certain embodiments, the electrical overload device 20 may be electrically connected between metal traces 16-1 and 16-2 via one of the wire bonds 18.

[0037]

[0049] The LED chip 12 may be configured to produce light of many different wavelengths, depending on the application. In multi-color applications, several LED packages 10 may be arranged in close proximity to one another as part of a larger device, and the LED chips 12 within each LED package 10 may be configured to produce different emission colors, either alone or in combination with light-emitting materials. To produce different emission colors, the LED chips 12, and the light-emitting materials, if present, may be formed with structural differences, including variations in dimensions within each LED package 10. In this regard, the emission heights within each LED package 10 may differ, thereby promoting collective emission non-uniformity when assembled in close proximity to one another.

[0038]

[0050] As used herein, the luminescence height of an LED chip or LED package may be defined as the height of the uppermost luminescent surface, measured from the lower mounting surface common to multiple LED chips or LED packages. The uppermost luminescent surface may be defined as the uppermost surface of the luminescent element of the LED chip or LED package. The luminescent element of an LED chip or LED package may be defined as the LED chip itself and / or any luminescent material present. For example, in the case of an LED chip that does not contain luminescent material, the uppermost luminescent surface may be defined as the uppermost surface of the LED chip. In another example, in the case of an LED chip that contains luminescent material on the LED chip, the uppermost luminescent surface may be defined as the uppermost surface of the luminescent material. In the context of an LED package, the luminescence height may be measured as the vertical distance from the mounting surface of the LED package to the uppermost luminescent surface of the luminescent element. In the context of a multi-chip LED package, the luminescence height may be measured as the vertical distance from the mounting surface within the package common to multiple chips to the uppermost luminescent surface of the luminescent element of each LED chip.

[0039]

[0051] Aspects of this disclosure provide luminescence height arrangements for multiple LED chips and / or multiple LED packages of different light-emitting types, improving the uniformity of the collective luminescence height of the multiple LED chips and / or multiple LED packages. In certain embodiments, the thickness of the LED chips and / or light-emitting material layers may be provided at a predetermined value based on the intended arrangement of LED chips in close proximity to other LED chips, either within individual LED packages arranged together or within a common multi-chip LED package. Thus, the luminescence heights of LED chips and / or LED packages of different light-emitting types may be substantially the same, or within 25%, 10%, 5%, or 1% of each other. In certain examples, the luminescence heights of LED chips and / or LED packages of different light-emitting types may be substantially the same, or within 100 microns (μm), 75 μm, 60 μm, 30 μm, or 15 μm of each other. Larger values, such as within 25% or within 100 μm, may be suitable for improving uniformity of light emission height across many different types of LED chips and / or LED packages with many different types of light emission colors. Larger values ​​may also be suitable for small groups of LED chips and / or LED packages, such as two different types with large differences in light emission color. In certain embodiments, smaller values, such as within 10% or within 30 μm, may be applicable to both many different types of light emission colors and embodiments of smaller groups of LED chips and / or LED packages.

[0040]

[0052] Figures 2 to 4 show the same or similar luminescence height H for each of the LED packages 10-1 to 10-3. E Various embodiments of LED packages 10-1 to 10-3 are illustrated, configured to provide different emission colors or wavelengths, while also offering the same functionality. The diagrams provided in Figures 2 to 4 correspond to cross-sections along section line AA in Figure 1.

[0041]

[0053] Figure 2 is a cross-sectional view of an LED package 10-1 along section line AA in Figure 1, with respect to an LED chip 12-1 including a positioned light-emitting material layer 22-1. The LED package 10-1 includes the arrangement of mounting pads 24-1 to 24-2 on the second face 14'' or mounting face of the submount 14 opposite the first face 14'. Mounting pads 24-1 to 24-2 may be electrically coupled to metal traces 16-1 to 16-2 via vias extending through a portion of the submount 14 not visible in the cross-section of Figure 2. In certain embodiments, the light-emitting material layer 22-1 may be provided as a conformal coating covering the surface of the LED chip 12-1 and the submount 14 adjacent to the LED chip 12-1. In other embodiments, the light-emitting material layer 22-1 may be positioned directly above the LED chip 12-1. A encapsulant 26 may be provided above the light-emitting material layer 22-1 and the LED chip 12-1 on the submount 14, which is light-transmitting and / or light-transparent to light from the LED chip 12-1 and / or the light-emitting material layer 22-1. Many different materials may be used for the encapsulant 26, including silicone, plastic, epoxy, or glass, and the appropriate material is compatible with the molding process.

[0042]

[0054] To provide the target color to the LED package 10-1, the light-emitting material layer 22-1 provides appropriate wavelength conversion for the target color at a height H on the LED chip 12-1. 22-1 It may be provided as follows: Height H 22-1It may be determined by any number of factors for providing a target color, such as the filling rate and / or particle size of the light-emitting particles in the light-emitting material layer 22-1. In a specific example, the LED package 10-1 may be configured to provide a light-emitting color or color point corresponding to substantially white light, such as warm white, neutral white, or cool white. In such an example, the LED chip 12-1 may be configured to provide light having a blue wavelength (e.g., from 430 nm to 480 nm), and the light-emitting material layer 22-1 may provide one or more of cyan, green, amber, yellow, orange, and / or red peak wavelengths when combined with the blue wavelength of the LED chip 12-1, and may be configured to provide collective white light emission. In another example, the LED package 10-1 may be configured such that the collective light emission provides a saturated color target that is substantially provided by the light-emitting material layer 22-1. For example, the light-emitting material layer 22-1 may be provided with a filling rate such that substantially most of the light emission from the LED chip 12-1 is subject to wavelength conversion. In this regard, the collective light emission from the LED package 10-1 is provided in a color that is substantially wavelength-converted light. For example, the LED package 10-1 may be configured to provide, among other things, a light-emitting color or color point that is mainly light emission of cyan, green, amber, yellow, orange, red, or mint color. The light-emitting height H of the LED package 10-1 E may be defined as the vertical distance from the bottom or mounting surface of the mounting pads 24-1, 24-2 to the uppermost surface of the light-emitting material layer 22-1. As illustrated, the light-emitting height H E is, in addition to the submount 14, the metal traces 16-~1, 16-2, and the mounting pads 24-1, 24-2, the height H of the light-emitting material layer 22-1 22-1 and the height H of the LED chip 12-1 12-1 both included. When the mounting pads 24-1, 24-2 do not exist on the second surface 14'' of the submount 14, the light-emitting height H E may be defined as the vertical distance from the second surface 14'' of the submount 14 or the mounting surface to the uppermost surface of the light-emitting material layer 22-1.

[0043]

[0055] Figure 3 is a cross-sectional view of another arrangement of LED package 10-2 along section line AA in Figure 1, which provides a different emission color from LED package 10-1 in Figure 2. LED package 10-2 may be similar to LED package 10-1 in Figure 2, but the combination of LED chip 12-2 and emissive material layer 22-2 provides a different emission color or color point. For example, LED chip 12-2 may be configured to provide light at blue wavelengths (e.g., 430 nm to 480 nm), and emissive material layer 22-2 may be configured to provide one or more peak wavelengths of cyan, green, amber, yellow, orange, and / or red, which, when combined with the blue wavelength of LED chip 12-2, provide a different aggregate emission than LED package 10-1 in Figure 2. In certain embodiments, the height H of the emissive material layer 22-2 on LED chip 12-2 22-2 This is the height H of the light-emitting material layer 22-1 in Figure 2. 22-1 It may be lower than this. According to the principle of this disclosure, the luminescence height H of both LED packages 10⁻¹ and 10⁻² E To ensure that the height of LED chip 12-2 is the same as or similar to that of LED chip 12-1 in Figure 2, the height H 12-1 A height higher than H 12-2 A provision may be made.

[0044]

[0056] Figure 4 is a cross-sectional view of another arrangement of LED package 10-3 along section line AA in Figure 1, which provides a different emission color or color point than LED package 10-1 in Figure 2 and LED package 10-2 in Figure 3. In Figure 4, LED package 10-3 does not include an emissive material layer. In this regard, the emission from LED package 10-3 is produced solely by LED chip 12-3, which provides monochromatic emission such as blue wavelength (e.g., 430 nm to 480 nm), green wavelength (e.g., 500 nm to 570 nm), or red wavelength (e.g., 600 nm to 650 nm). The above wavelength ranges are provided as examples, and in practice, LED chip 12-3 may be configured to emit light of any wavelength depending on the application. Because there is no emissive material layer, the emission height H EThis is defined as the vertical distance from the bottom of mounting pads 24-1, 24-2, or, if mounting pads 24-1, 24-2 are not present, from the second face 14'' to the top surface of LED chip 12-3. The luminous height H of LED package 10-3 E To make the height H of the LED chips 12-3 the same as or similar to that of LED package 10-1 in Figure 2 and LED package 10-2 in Figure 3, 12-3 The height H of both LED chips 12-1 and 12-2 in Figures 3 and 4 is shown. 12-1 H 12-2 It may be larger than that.

[0045]

[0057] Figure 5 is a cross-sectional view of a light-emitting device 28, including each of the LED packages 10-1 to 10-3 shown in Figures 2 to 4. The light-emitting device 28 can embody luminaires or lighting modules, which may be incorporated into larger lighting systems. The LED packages 10-1 to 10-3 may be mounted in close proximity to each other on a support element 30 such as a printed circuit board. According to the principles of this disclosure, the relative height H of the LED chips 12-1 to 12-3 12-1 From height H 12-3 , or thickness, is a common emission height H throughout the entire light-emitting device 28. E The height H of LED chips 12-1 to 12-3 is selected to compensate for the difference in the light-emitting material layers 22-1 and 22-3, based on the respective target light-emitting color of LED packages 10-1 to 10-3. 12-1 From height H 12-3 The difference may exceed the normal variation in chip height. For example, the height H of LED chip 12-1 12-1 The height of the LED chip is 12-3 H 12-3 The height H of the LED chip 12-2 may be set in the range of 45% to 65%. 12-2 The height of the LED chip is 12-3 H 12-3 It may be set in the range of 65% to 85%. In a specific example, the height H of the LED chip 12-1. 12-1The height H of the LED chip 12-2 may be set in the range of 120 μm to 140 μm. 12-2 The height H of the LED chip 12-3 may be set in the range of 155 μm to 175 μm. 12-3 The height difference may be set in the range of 215 μm to 235 μm. In certain embodiments, each of the above height differences may be applicable, either as a percentage or an actual value, to embodiments in which each of the LED chips 12-1 to 12-3 is configured to emit light of the same or similar wavelengths, such as in the range of 430 nm to 480 nm. In such embodiments, the difference in emission provided by each of the LED packages 10-1 to 10-3 may be provided by the difference in the light-emitting material layers 22-2 and 22-3 in the LED packages 10-1 and 10-2, and by the absence of light-emitting material in the LED package 10-3. In other embodiments, one or more of the LED chips 12-1 to 12-3 may be configured to emit a different emission wavelength from one or more of the other LED chips 12-1 to 12-3.

[0046]

[0058] In Figure 5, the emission height H E Although the same is exemplified across each of the LED packages 10-1 to 10-3, slight variations may exist, while improving the overall uniformity of the light-emitting surface of the light-emitting device 28. Thus, the light-emitting height H E This may be substantially the same across each of the LED packages 10-1 to 10-3, or within 25%, 10%, 5%, or 1%. In a specific example, the luminescence height H E The luminescence height H may be substantially the same across each of the LED packages 10-1 to 10-3, or within 100 μm, or within 75 μm, or within 60 μm, or within 30 μm, or within 15 μm. Figure 5 shows three LED packages 10-1 to 10-3 with different luminescence colors having the same or similar luminescence height H EWhile an example is illustrated, the principle described herein is applicable to many combinations of LED packages that provide many different emission colors. For example, in a particular embodiment, at least 2, or at least 5, or at least 10, or at least 15, or at least 20, or in the range of 2 to 20, or in the range of 5 to 20, each configured to provide a different target emission color, may be arranged to have substantially the same emission height, or within 25% of each other, or within 10% of each other, or within 5% of each other, or within 1% of each other, or within 100 μm of each other, or within 75 μm of each other, or within 60 μm of each other, or within 30 μm of each other, or within 15 μm of each other.

[0047]

[0059] In certain embodiments, the height difference between LED chips may be predetermined based on the target emission color of the LED package in which the LED chips are mounted. As described above, certain embodiments include LED chips configured to emit the same emission color, which are placed together with different light-emitting materials in different LED packages, or in LED packages without light-emitting materials. In other embodiments, the LED chips may be configured to emit different emission colors. In any case, the height difference between LED chips may be provided before the LED chips are mounted in their respective LED packages. In certain embodiments, the height difference may be provided by removing and / or thinning certain portions of the LED chip, such as an LED chip substrate, by different amounts from each other. As used herein, an LED chip substrate may refer to a growth substrate on which an active LED structure is epitaxially grown. In another example, an LED chip substrate may refer to a host substrate on which an active LED structure is supported, typically when the growth substrate is removed.

[0048]

[0060] Figures 6A to 6C show the height H between each LED chip substrate 32-1 and LED chip substrate 32-3. 32-1 From height H 32-3These are cross-sectional views of LED chips 12-1 to 12-3 illustrating differences in thickness. In each of Figures 6A to 6C, the active LED structures 31-1 to 31-3 are generally exemplified on the bottom surface of LED chip substrates 32-1 to 31-3, as is typical for flip-chip mounting. However, the principles described herein are also applicable to other chip structures, such as when LED chip substrates 32-1 to 32-3 are positioned closer to the mounting surface than active LED structures 31-1 to 31-3. As illustrated, the height H of LED chip substrate 32-1 32-1 The height H of the LED chip substrate 32-2 is 32-2 Smaller than, the height H of the LED chip substrate 32-2 32-2 The height H of the LED chip substrate 32-3 is 32-3 Smaller than the above height H. During the manufacturing of LED chips 12-1 to 12-3, thinning and / or planarization steps applied to LED chip substrates 32-1 to 32-3 may be performed to provide the above height difference for each of the LED chips 12-1 to 12-3, based on the intended color target. In certain embodiments, at least two of the LED chips 12-1 to 12-3 may include the same type of active LED structures 31-1 to 31-3 configured to produce light of the same wavelength. 32-1 From height H 32-3 By creating a difference, the amount of light-emitting material can be varied for each of the LED chips 12-1 to 12-3, or even omitted entirely, to provide a different overall illumination while simultaneously providing a uniform illumination height from LED chip 12-1 to LED chip 12-3.

[0049]

[0061] While the examples described above are provided in the context of different LED packages arranged at the same or similar luminous height, the principles described herein are also applicable to a single LED package containing multiple LED chips of different luminous colors. In this regard, a multi-chip LED package may arrange LED chips of different luminous colors and / or different arrangements of luminescent materials, providing the same or similar luminous height within the multi-chip LED package.

[0050]

[0062] Figure 7A is a top view of an LED package 34 in which multiple LED chips 12-1 to 12-4 are assembled in close proximity to each other on a submount 14. LED chips 12-1 to 12-4 may include various combinations of chip type and / or LED chip orientation. For example, different chip types may include a first LED chip 12-1 and its corresponding light-emitting material, a second LED chip 12-2 and its corresponding light-emitting material that provides light of a different color than the first LED chip 12-1, and a third LED chip 12-3 and a fourth LED chip 12-4 that do not include the corresponding light-emitting material. The principles described herein are considered applicable to many different combinations of chip types within the LED package 34. Although only four LED chips 12-1 to 12-4 are illustrated, the disclosed principle is applicable to any number of LED chips in a common package, and the LED package 34 may contain at least 2, or at least 5, or at least 10, or at least 15, or at least 20, or in the range of 2 to 20, or in the range of 5 to 20, different LED chips, each LED chip being configured to provide a different target emission color. When assembled together according to this disclosure, the LED package 34 may be arranged to have an improved uniformity of emission height. For example, the individual emission heights of each LED chip 12-1 to 12-4 may be substantially the same, or within 25%, or 10%, or 5%, or 1%, or within 100 μm, or 75 μm, or 60 μm, or 30 μm, or 15 μm, or one-fifth of the other. In certain embodiments, different chip types may include different structures and / or orientations of LED chips 12-1 to 12-4. For example, the third LED chip 12-3 may be positioned vertically with electrical connections made on the opposite side, while LED chips 12-1, 12-2, and 12-4 may be positioned in a flip-chip orientation with electrical connections made from the same side at the interface with the submount 14.

[0051]

[0063] The LED package 34 may further include a light-changing material 36 positioned to cover a portion of the submount 14 outside of the LED chips 12-1 to 12-4. The light-changing material 36 may be formed of a light-reflective and / or light-refracting material so that the light from the LED chips 12-1 to 12-4 may be directed in a desired emission direction of the LED package 34 while reducing light loss. In certain embodiments, the light-changing material 36 may be composed of a substantially white color. As illustrated, the light-changing material 36 is positioned to extend from the periphery of the submount 14 to each peripheral edge of the LED chips 12-1 to 12-4, and between adjacent LED chips 12-1 to 12-4. In this regard, the collective light-emitting surface of the LED package 34 may be collectively formed by the upper surfaces of the LED chips 12-1 to 12-4. From the top view of Figure 7A, various electrical overload elements 20 may be visible, but the light-changing material 36 may be positioned on the submount 14 to cover them. The polarity indicator 38 may be etched onto the surface of the light-changing material 36 or formed in other ways. In other embodiments, the polarity indicator 38 may be omitted or formed on a different part of the LED package 34, such as the surface of the submount 14.

[0052]

[0064] Figure 7B is a cross-sectional view of an LED package 34 along the cross-sectional line 7B-7B in Figure 7A, which includes a first LED chip 12-1 having a first light-emitting material layer 22-1 and a second LED chip 12-2 having a second light-emitting material layer 22-2. In certain embodiments, the LED chips 12-1, 12-2 and the corresponding light-emitting material layers 22-1, 22-2 may be configured to provide different emission colors, such as white light of different color temperatures or at least one saturated color. In this regard, the height or thickness of the first light-emitting material layer 22-1 may be greater than the height or thickness of the second light-emitting material layer 22-2. As described above, the height or thickness of each LED chip 12-1, 12-2 may be predetermined to different values ​​such that the emission height including the LED chips 12-1, 12-2 and the corresponding light-emitting material layers 22-1, 22-2 is the same or similar. As illustrated, the light-modifying material 36 may cover each side of the LED chips 12-1, 12-2 and each side of the light-emitting material layers 22-1, 22-2. In certain embodiments, the light-modifying material 36 may be further positioned between the LED chips 12-1, 12-2 and between the light-emitting material layers 22-1, 22-2. The encapsulant 26 may be positioned across the light-emitting material layers 22-1, 22-2 and the light-modifying material 36, and in certain embodiments, the encapsulant 26 may extend overall so as to align with the periphery of the submount 14.

[0053]

[0065] Figure 7C is a cross-sectional view of an LED package 34 along the section line 7C-7C in Figure 7A, including a second LED chip 12-2 and a third LED chip 12-3. In certain embodiments, the third LED chip 12-3 may not have an associated light-emitting material, and therefore the third LED chip 12-3 is configured to provide monochromatic light emission. As illustrated, the height or thickness of the LED chips may be predetermined to different values, while the light emission heights described above are the same or similar.

[0054]

[0066] Figure 7D is a cross-sectional view of an LED package 34 along the section line 7D-7D of Figure 7A, including a third LED chip 12-3 and a fourth LED chip 12-4. In certain embodiments, the fourth LED chip 12-4 may include a chip cover 40 provided on its upper surface. As used herein, the chip cover 40 may also be referred to as a cover structure. As illustrated, the height of the chip cover 40 may be selected to be the same as or similar to the luminescence height of the third LED chip 12-3. In certain embodiments, the chip cover 40 may include a luminescent material. For example, the chip cover 40 may embody a glass-encased phosphor structure, a ceramic phosphor plate, or a cured silicone-encased phosphor structure. In other embodiments, the chip cover 40 may embody a light-transmitting or light-transparent cover such as glass or silicone. In yet another embodiment, the chip cover 40 may embody a light-transmitting or light-transparent cover on which a layer of luminescent material is formed.

[0055]

[0067] Although the LED package 34 is described in the context of a multi-chip package, the principles described are also applicable to embodiments in which each of the LED chips 12-1 to 12-4 is arranged individually within the package, along with all other elements described for the LED package 34. In this regard, the principles described for Figures 7A to 7D are applicable to providing each of the LED chips 12-1 to 12-4 in a separate package so that the luminous heights between the different packages are the same or similar as described above. Thus, each individual package is the same as that illustrated for the LED package 34, which contains only one of the LED chips 12-1 to 12-4. In yet another embodiment, two different LED packages may be provided, each with a different thickness of chip cover 40, to provide the same or similar luminous heights.

[0056]

[0068] As illustrated in Figures 7A to 7D, the LED package 34 may be provided with different LED chips 12-1 to 12-4 that provide different luminescent colors, but the overall luminescent height of the LED package 34 is the same or similar. Differences in and absence of luminescent material layers 22-1, 22-2 may be compensated by providing a predetermined thickness for each of the LED chips 12-1 to 12-4. In this regard, a common luminescent height of the LED package 34 may provide aggregate emission with improved uniformity and color mixing.

[0057]

[0069] Various manufacturing sequences may be implemented to provide uniform luminescence height for LED chips and / or LED packages of different luminescence colors. Figures 8 and 9 illustrate exemplary manufacturing sequences for reducing the thickness of LED chips based on target color points for improved uniformity of luminescence height.

[0058]

[0070] Figure 8 illustrates an exemplary manufacturing sequence 42 for improving the uniformity of the light emission height between a first LED chip containing light-emitting material and a second LED chip. In the first step 44, a first color point is provided or determined based on the intended light output for the first LED chip and light-emitting material. The first LED chip and light-emitting material may embody any of the LED chip 12-1 and light-emitting material layer 22-1 in Figure 2, the LED chip 12-2 and light-emitting material layer 22-2 in Figure 3, or the LED chips 12-1, 12-2 in Figures 7A to 7D. The first color point may determine the amount or thickness of the corresponding light-emitting material provided on the first LED chip. In the second step 46, a second color point is provided based on the light output of the second LED chip. In certain embodiments, the second color point may correspond to the light emission produced by the active LED structure of the second LED chip. Thus, the second LED chip may not have a corresponding light-emitting material. For example, the second LED chip may embody LED chip 12-3 in Figure 4, or either LED chip 12-3 or LED chip 12-4 in Figures 7A to 7D. In the third step 48, the thickness of one or more of the first and second LED chips may be reduced so that the luminescence height between the first and second LED chips is the same or similar as described above. In one example, both the first and second LED chips may be formed with the same thickness, and then the thickness of the first LED chip may be reduced by an amount corresponding to the thickness of the corresponding light-emitting material. In another example, the first and second LED chips may be initially formed with different thicknesses. Thus, both the first and second LED chips may have their respective thicknesses reduced by an amount that provides a uniform luminescence height. In yet another example, a chip cover (e.g., 40 in Figure 7D) may be used alone or in combination with reducing the thickness of at least one of the first and second LED chips to achieve the same or similar luminous height.

[0059]

[0071] Figure 9 illustrates another exemplary manufacturing sequence 50 for improving the uniformity of the light emission height between a first LED chip containing a first light-emitting material and a second LED chip also containing a second light-emitting material. The first LED chip and the corresponding first light-emitting material and the second LED chip and the corresponding second light-emitting material may embody any of the LED chip 12-1 and light-emitting material layer 22-1 in Figure 2, the LED chip 12-2 and light-emitting material layer 22-2 in Figure 3, or the LED chips 12-1 and 12-2 in Figures 7A to 7D. In the first step 52, a first color point is provided or determined based on the intended light output for the first LED chip and the first light-emitting material. In the second step 54, a second color point is provided or determined based on the intended light output for the second LED chip and the second light-emitting material. In the third step 56, the thickness of one or more of the first and second LED chips may be reduced so that the luminous height between the first and second LED chips is the same or similar as described above. In another example, a chip cover (e.g., 40 in Figure 7D) may be used alone or in combination with reducing the thickness of at least one of the first and second LED chips to achieve the same or similar luminous height.

[0060]

[0072] Any of the embodiments described herein, and / or any of the various individual embodiments and features described herein, may be combined for further advantages. Any of the various embodiments disclosed herein may be combined with one or more other disclosed embodiments unless otherwise indicated herein.

[0061]

[0073] Those skilled in the art will recognize improvements and modifications to preferred embodiments of this disclosure. All such improvements and modifications are considered to fall within the scope of the concepts and appended claims disclosed herein.

Claims

1. The steps include providing a first light-emitting diode (LED) chip and a first light-emitting material layer that define a first color point, The step of providing a second LED chip that defines a second color point different from the first color point, The steps include reducing the thickness of at least one of the first LED chip and the second LED chip such that the first light emission height, defined as the vertical distance from the mounting surface of the first LED chip to the uppermost light-emitting surface of the first light-emitting material layer, is within 100 microns (μm) of the second light emission height from the mounting surface of the second LED chip to the uppermost light-emitting surface of the second LED chip, and A method that includes [a certain feature].

2. The method according to claim 1, wherein the thickness of the first LED chip is reduced by an amount corresponding to the thickness of the first light-emitting material layer.

3. The method according to claim 1, wherein the step of reducing the thickness of at least one of the first LED chip and the second LED chip comprises the step of reducing the thickness of the substrate of at least one of the first LED chip and the second LED chip.

4. The method according to claim 1, wherein the first luminescence height is within 60 μm of the second luminescence height.

5. The method according to claim 1, wherein the first luminescence height is within 30 μm of the second luminescence height.

6. The steps include providing a first light-emitting diode (LED) chip and a first light-emitting material layer that define a first color point, The steps include providing a second LED chip and a second light-emitting material layer that define a second color point different from the first color point, The steps include reducing the thickness of at least one of the first LED chip and the second LED chip such that the first light emission height, defined as the vertical distance from the mounting surface of the first LED chip to the uppermost light emission surface of the first light-emitting material layer, is within 100 microns (μm) of the second light emission height, defined as the vertical distance from the mounting surface of the second LED chip to the uppermost light-emitting surface of the second light-emitting material layer, and A method that includes [a certain feature].

7. The method according to claim 6, wherein the step of reducing the thickness of at least one of the first LED chip and the second LED chip comprises the step of reducing the thickness of the substrate of at least one of the first LED chip and the second LED chip.

8. The method according to claim 6, wherein the first luminescence height is within 60 μm of the second luminescence height.

9. The method according to claim 6, wherein the first luminescence height is within 30 μm of the second luminescence height.

10. It comprises a first light-emitting diode (LED) package and a second LED package, The first LED package described above is The first submount and A first LED chip on the first submount, comprising a first growth substrate, The first LED chip comprises a first light-emitting material layer on the first LED chip, the first LED chip and the first light-emitting material layer define a first color point, and the first light-emitting height is defined as the vertical distance from the mounting surface of the first LED package to the uppermost light-emitting surface of the first LED package. The aforementioned second LED package is The second submount, The LED package comprises a second LED chip on the second submount, the second LED chip having a second growth substrate, the second growth substrate having a reduced thickness compared to the first growth substrate, the second LED chip defining at least partially a second color point different from the first color point, and the second luminescence height is defined as the vertical distance from the mounting surface of the second LED package to the uppermost luminescence surface of the second LED package. A light-emitting device in which the first light-emitting height is within 100 microns (μm) of the second light-emitting height.

11. The light-emitting device according to claim 10, wherein the first light-emitting height is within 60 μm of the second light-emitting height.

12. The light-emitting device according to claim 10, wherein the first light-emitting height is within 30 μm of the second light-emitting height.

13. The light-emitting device according to claim 10, wherein the uppermost light-emitting surface of the first LED package is defined on the uppermost surface of the first light-emitting material layer, and the uppermost light-emitting surface of the second LED package is defined on the uppermost surface of the second LED chip.

14. The light-emitting device according to claim 10, further comprising a second light-emitting material layer on the second LED chip, wherein the second LED chip and the second light-emitting material layer define the second color point, the uppermost light-emitting surface of the first LED package is defined on the uppermost surface of the first light-emitting material layer, and the uppermost light-emitting surface of the second LED package is defined on the uppermost surface of the second light-emitting material layer.

15. The light-emitting device according to claim 10, wherein the first light-emitting material layer is provided as a coating on the first LED chip.

16. The light-emitting device according to claim 10, wherein the first light-emitting material layer is disposed on or inside a chip cover attached to the first LED chip.

17. Submount and A first light-emitting diode (LED) chip on the submount, comprising a first growth substrate, A first light-emitting material layer on the first LED chip, wherein the first LED chip and the first light-emitting material layer define a first color point, and the first light-emitting height is defined as the vertical distance from the mounting surface of the first LED chip to the uppermost light-emitting surface of the first light-emitting material layer, A second LED chip on the submount, wherein the second LED chip comprises a second growth substrate, the second growth substrate having a reduced thickness compared to the first growth substrate, the second LED chip defines at least partially a second color point different from the first color point, and the second luminescence height is defined as the vertical distance from the mounting surface of the second LED chip to the uppermost luminescence surface of the second LED chip. Equipped with, A light-emitting diode (LED) package in which the first light-emitting height is within 100 μm of the second light-emitting height.

18. The LED package according to claim 17, wherein the first light emission height is within 60 μm of the second light emission height.

19. The LED package according to claim 17, wherein the first light emission height is within 30 μm of the second light emission height.

20. The LED package according to claim 17, wherein the first light-emitting material layer is provided as a coating on the first LED chip.

21. The LED package according to claim 17, wherein the first light-emitting material layer is disposed on or inside a chip cover attached to the first LED chip.

Images