Magnetic sensor device

Abstract

To realize a magnetic sensor device capable of reducing an error caused by a magnetic field other than a magnetic field to be detected.SOLUTION: A magnetic sensor device 100 includes: a first detection circuit 10; a second detection circuit 20; and a processor 40. The processor 40 is constituted so as to execute first generation processing for generating a first initial detection value, second generation processing for generating a second initial detection value, first correction processing, second correction processing, and determination processing. The first correction processing corrects the first initial detection value and updates the first initial detection value. The second correction processing corrects the second initial detection value and updates the second initial detection value. The processor 40 executes determination processing after alternately executing the first correction processing and the second correction processing.SELECTED DRAWING: Figure 12

Description

Technical Field

[0001] The present invention relates to a magnetic sensor device configured to detect a plurality of magnetic fields in a plurality of different directions.

Background Art

[0002] In recent years, magnetic sensors using magnetoresistive effect elements have been used in various applications. In a system including a magnetic sensor, there are cases where it is desired to detect a magnetic field including a component in a direction perpendicular to the surface of a substrate by a magnetoresistive effect element provided on the substrate. In this case, by providing a soft magnetic material that converts a magnetic field in a direction perpendicular to the surface of the substrate into a magnetic field in a direction parallel to the surface of the substrate, or by arranging the magnetoresistive effect element on an inclined surface formed on the substrate, a magnetic field including a component in a direction perpendicular to the surface of the substrate can be detected.

[0003] Patent Document 1 discloses a magnetic sensor in which an X-axis sensor, a Y-axis sensor, and a Z-axis sensor are provided on a substrate. The magnetoresistive effect element constituting the Z-axis sensor is provided on an inclined surface of a protrusion formed on the base film of the substrate.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In magnetic sensors where magnetoresistive elements are placed on an inclined surface, a soft magnetic material that converts the magnetic field is unnecessary. However, soft magnetic materials can also function as shielding. That is, these soft magnetic materials may be configured to hardly attenuate the magnetic field in the direction to be detected, but to block or attenuate magnetic fields in directions other than the direction to be detected. Therefore, in magnetic sensors with such soft magnetic materials or without shielding, the sensitivity of the magnetoresistive element can change due to magnetic fields in directions other than the direction to be detected, which can result in a decrease in the detection accuracy of the magnetic sensor.

[0006] The present invention has been made in view of the above problems, and its object is to provide a magnetic sensor device configured to detect multiple magnetic fields in multiple directions that are different from each other, which can reduce errors caused by magnetic fields other than the magnetic field to be detected. [Means for solving the problem]

[0007] The magnetic sensor device of the present invention comprises a first detection circuit configured to detect a component of a target magnetic field in one direction and generate a first detection signal, a second detection circuit configured to detect a component of the target magnetic field in another direction and generate a second detection signal, and a processor.

[0008] The processor is configured to perform the following: a first generation process that generates a first initial detection value using a first detection signal; a second generation process that generates a second initial detection value using a second detection signal; a first correction process that updates the first initial detection value by correcting it using a second correction value generated from the latest second initial detection value; a second correction process that updates the second initial detection value by correcting it using a first correction value generated from the latest first initial detection value; and a determination process that determines the latest first initial detection value as a first detection value corresponding to the components of the target magnetic field parallel to the first reference direction, and determines the latest second initial detection value as a second detection value corresponding to the components of the target magnetic field parallel to the second reference direction. The processor performs the first correction process and the second correction process alternately, and then performs the determination process. [Effects of the Invention]

[0009] In the magnetic sensor device of the present invention, the processor performs a first correction process and a second correction process alternately, and then performs a determination process. As a result, according to the present invention, it is possible to reduce errors caused by magnetic fields other than the magnetic field to be detected. [Brief explanation of the drawing]

[0010] [Figure 1] This is a perspective view showing a magnetic sensor device according to the first embodiment of the present invention. [Figure 2] This is a plan view showing a magnetic sensor device according to the first embodiment of the present invention. [Figure 3] This is a functional block diagram showing the configuration of a magnetic sensor device according to the first embodiment of the present invention. [Figure 4] This is a circuit diagram showing the circuit configuration of the first detection circuit in the first embodiment of the present invention. [Figure 5] This is a circuit diagram showing the circuit configuration of the second detection circuit in the first embodiment of the present invention. [Figure 6] This is a circuit diagram showing the circuit configuration of the third detection circuit in the first embodiment of the present invention. [Figure 7] It is a plan view showing a part of the first chip in the first embodiment of the present invention. [Figure 8] It is a cross-sectional view showing a part of the first chip in the first embodiment of the present invention. [Figure 9] It is a plan view showing a part of the second chip in the first embodiment of the present invention. [Figure 10] It is a cross-sectional view showing a part of the second chip in the first embodiment of the present invention. [Figure 11] It is a side view showing a magnetoresistive element in the first embodiment of the present invention. [Figure 12] It is a functional block diagram showing the configuration of a processor in the first embodiment of the present invention. [Figure 13] It is a circuit diagram showing the circuit configuration of the first detection circuit in the second embodiment of the present invention. [Figure 14] It is a circuit diagram showing the circuit configuration of the second detection circuit in the second embodiment of the present invention. [Figure 15] It is a circuit diagram showing the circuit configuration of the third detection circuit in the second embodiment of the present invention. [Figure 16] It is a functional block diagram showing the configuration of a magnetic sensor device according to the third embodiment of the present invention. [Figure 17] It is a circuit diagram showing the circuit configuration of the first detection circuit in the third embodiment of the present invention. [Figure 18] It is a circuit diagram showing the circuit configuration of the second detection circuit in the third embodiment of the present invention. [Figure 19] It is a circuit diagram showing the circuit configuration of the third detection circuit in the third embodiment of the present invention. [Figure 20] It is a perspective view showing a plurality of magnetoresistive elements and a plurality of yokes in the third embodiment of the present invention. [Figure 21] It is a side view showing a plurality of magnetoresistive elements and a plurality of yokes in the third embodiment of the present invention. [Figure 22]It is a functional block diagram showing the configuration of a processor in the third embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0011] [First Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, referring to FIGS. 1 to 3, the configuration of a magnetic sensor device according to the first embodiment of the present invention will be described. FIG. 1 is a perspective view showing the magnetic sensor device 100. FIG. 2 is a plan view showing the magnetic sensor device 100. FIG. 3 is a functional block diagram showing the configuration of the magnetic sensor device 100. The magnetic sensor device 100 includes a magnetic sensor 1.

[0012] The magnetic sensor device 100 includes a first chip 2, a second chip 3, and a support 4 that supports the first and second chips 2 and 3. The magnetic sensor 1 is composed of the first chip 2 and the second chip 3. The first chip 2, the second chip 3, and the support 4 all have a rectangular parallelepiped shape. The support 4 has a reference plane 4a that is the upper surface, a lower surface located on the opposite side of the reference plane 4a, and four side surfaces that connect the reference plane 4a and the lower surface.

[0013] Here, referring to FIGS. 1 and 2, the reference coordinate system in the present embodiment will be described. The reference coordinate system is a coordinate system based on the magnetic sensor device 100 and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, the X direction, the Y direction, and the Z direction are defined. The X direction, the Y direction, and the Z direction are orthogonal to each other. In particular, in the present embodiment, the direction perpendicular to the reference plane 4a of the support 4 and from the lower surface of the support 4 toward the reference plane 4a is defined as the Z direction. Also, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The three axes defining the reference coordinate system are an axis parallel to the X direction, an axis parallel to the Y direction, and an axis parallel to the Z direction.

[0014] Hereinafter, the position at the end of the Z-direction relative to the reference position will be referred to as "above," and the position opposite to the "above" position relative to the reference position will be referred to as "below." Furthermore, with respect to the components of the magnetic sensor device 100, the surface located at the end in the Z-direction will be referred to as the "top surface," and the surface located at the end in the -Z-direction will be referred to as the "bottom surface." Also, the expression "when viewed from the Z-direction" means viewing the object from a position far away in the Z-direction.

[0015] The first chip 2 has an upper surface 2a and a lower surface located on opposite sides, and four sides connecting the upper surface 2a and the lower surface. The second chip 3 has an upper surface 3a and a lower surface located on opposite sides, and four sides connecting the upper surface 3a and the lower surface.

[0016] The first chip 2 is mounted on the reference plane 4a of the support 4 with its lower surface facing the reference plane 4a of the support 4. The second chip 3 is mounted on the reference plane 4a of the support 4 with its lower surface facing the reference plane 4a of the support 4. The first chip 2 and the second chip 3 are joined to the support 4 by adhesives 6 and 7, respectively.

[0017] The first chip 2 has a plurality of first electrode pads 21 provided on its upper surface 2a. The second chip 3 has a plurality of second electrode pads 31 provided on its upper surface 3a. The support 4 has a plurality of third electrode pads provided on a reference plane 4a. Although not shown, in the magnetic sensor device 100, two corresponding electrode pads from the plurality of first electrode pads 21, the plurality of second electrode pads 31, and the plurality of third electrode pads are connected to each other by bonding wires.

[0018] Here, the dimension perpendicular to the reference plane 4a is called the thickness. As shown in Figure 1, the thickness of the first chip 2 and the thickness of the second chip 3 may be the same. Also, the thickness of the support 4 may be greater than the thickness of the first chip 2 and the thickness of the second chip 3.

[0019] The magnetic sensor 1 comprises a first detection circuit 10, a second detection circuit 20, and a third detection circuit 30. The first chip 2 includes the first detection circuit 10. The second chip 3 includes the second detection circuit 20 and the third detection circuit 30. Since the magnetic sensor 1 is a component of the magnetic sensor device 100, it can also be said that the magnetic sensor device 100 comprises the first to third detection circuits 10, 20, and 30.

[0020] The magnetic sensor device 100 further includes a processor 40. The support 4 contains the processor 40. The first to third detection circuits 10, 20, 30 and the processor 40 are connected via a plurality of first electrode pads 21, a plurality of second electrode pads 31, a plurality of third electrode pads and a plurality of bonding wires.

[0021] Each of the first to third detection circuits 10, 20, and 30 includes a plurality of magnetic detection elements and is configured to detect a target magnetic field and generate at least one detection signal. In this embodiment, the plurality of magnetic detection elements are a plurality of magnetoresistive elements. Hereinafter, magnetoresistive elements will be referred to as MR elements.

[0022] The processor 40 is configured to generate a first, second, and third detection value, which correspond to the components of the magnetic field at a predetermined reference position in three different directions, by processing a plurality of detection signals generated by the first to third detection circuits 10, 20, and 30. In this embodiment, the three different directions are two directions parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is configured, for example, by an application-specific integrated circuit (ASIC).

[0023] Next, the first to third detection circuits 10, 20, and 30 will be described with reference to Figures 3 to 10. Figure 4 is a circuit diagram showing the circuit configuration of the first detection circuit 10. Figure 5 is a circuit diagram showing the circuit configuration of the second detection circuit 20. Figure 6 is a circuit diagram showing the circuit configuration of the third detection circuit 30. Figure 7 is a plan view showing a part of the first chip 2. Figure 8 is a cross-sectional view showing a part of the first chip 2. Figure 9 is a plan view showing a part of the second chip 3. Figure 10 is a cross-sectional view showing a part of the second chip 3.

[0024] Here, as shown in Figures 7 and 9, the U and V directions are defined as follows: The U direction is the direction of rotation from the X direction toward the -Y direction. The V direction is the direction of rotation from the Y direction toward the X direction. In this embodiment, the U direction is specifically defined as the direction of rotation by α from the X direction toward the -Y direction, and the V direction is defined as the direction of rotation by α from the Y direction toward the X direction. Note that α is an angle greater than 0° and less than 90°. In one example, α is 45°. Furthermore, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0025] In this embodiment, the U direction corresponds to the "first reference direction" in the present invention. Also in this embodiment, the V direction corresponds to the "second reference direction" in the present invention. Both the first reference direction (U direction) and the second reference direction (V direction) are parallel to the reference plane 4a and are orthogonal to each other.

[0026] Furthermore, as shown in Figure 10, the W1 and W2 directions are defined as follows: The W1 direction is the direction of rotation from the V direction toward the -Z direction. The W2 direction is the direction of rotation from the V direction toward the Z direction. In this embodiment, the W1 direction is specifically defined as the direction of rotation by β from the V direction toward the -Z direction, and the W2 direction is defined as the direction of rotation by β from the V direction toward the Z direction. Note that β is an angle greater than 0° and less than 90°. The direction opposite to the W1 direction is defined as the -W1 direction, and the direction opposite to the W2 direction is defined as the -W2 direction. The W1 and W2 directions are orthogonal to the U direction, respectively.

[0027] The first detection circuit 10 is configured to detect a component of the target magnetic field parallel to the U direction and generate at least one first detection signal corresponding to this component. The second detection circuit 20 is configured to detect a component of the target magnetic field parallel to the W1 direction and generate at least one second detection signal corresponding to this component. The third detection circuit 30 is configured to detect a component of the target magnetic field parallel to the W2 direction and generate at least one third detection signal corresponding to this component.

[0028] As shown in Figure 4, the first detection circuit 10 includes a power supply terminal V1, a ground terminal G1, signal output terminals E11 and E12, a first resistor R11, a second resistor R12, a third resistor R13, and a fourth resistor R14. The multiple MR elements of the first detection circuit 10 constitute the first to fourth resistors R11, R12, R13, and R14.

[0029] The first and second resistors R11 and R12 are connected in series in the first path (the left path in Figure 4), which is the path that electrically connects the first node P11 and the second node P12. The third and fourth resistors R13 and R14 are connected in series in the second path (the right path in Figure 4), which is another path that electrically connects the first node P11 and the second node P12.

[0030] The first and fourth resistors R11 and R14 are connected to the first node P11. The second and third resistors R12 and R13 are connected to the second node P12. The first node P11 is connected to the power supply terminal V1. The second node P12 is connected to the ground terminal G1. The connection point between the first resistor R11 and the second resistor R12 is connected to the signal output terminal E11. The connection point between the third resistor R13 and the fourth resistor R14 is connected to the signal output terminal E12.

[0031] As shown in Figure 5, the second detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The multiple MR elements of the second detection circuit 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0032] The circuit configuration of the second detection circuit 20 is basically the same as that of the first detection circuit 10. If the power supply terminal V1, ground terminal G1, signal output terminals E11, E12, resistors R11, R12, R13, R14 and nodes P11, P12 in the description of the circuit configuration of the first detection circuit 10 are replaced with power supply terminal V2, ground terminal G2, signal output terminals E21, E22, resistors R21, R22, R23, R24 and nodes P21, P22, respectively, the circuit configuration of the second detection circuit 20 will be described.

[0033] As shown in Figure 6, the third detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, a third resistor R33, and a fourth resistor R34. The multiple MR elements of the third detection circuit 30 constitute the first to fourth resistors R31, R32, R33, and R34.

[0034] The circuit configuration of the third detection circuit 30 is basically the same as that of the first detection circuit 10. If the power supply terminal V1, ground terminal G1, signal output terminals E11, E12, resistors R11, R12, R13, R14 and nodes P11, P12 in the description of the circuit configuration of the first detection circuit 10 are replaced with power supply terminal V3, ground terminal G3, signal output terminals E31, E32, resistors R31, R32, R33, R34 and nodes P31, P32, respectively, the circuit configuration of the third detection circuit 30 will be described.

[0035] A predetermined voltage or current is applied to each of the power supply terminals V1 to V3. Each of the ground terminals G1 to G3 is connected to ground.

[0036] Hereinafter, the multiple MR elements of the first detection circuit 10 will be referred to as multiple first MR elements 50A, the multiple MR elements of the second detection circuit 20 will be referred to as multiple second MR elements 50B, and the multiple MR elements of the third detection circuit 30 will be referred to as multiple third MR elements 50C. Since the first to third detection circuits 10, 20, and 30 are components of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes multiple first MR elements 50A, multiple second MR elements 50B, and multiple third MR elements 50C. Furthermore, any MR element will be denoted by the reference numeral 50.

[0037] Figure 11 is a side view showing the MR element 50. The MR element 50 is a spin valve type MR element. The MR element 50 has a magnetization fixed layer 52 having magnetization with a fixed direction, a free layer 54 having magnetization whose direction can change according to the direction of the target magnetic field, and a gap layer 53 disposed between the magnetization fixed layer 52 and the free layer 54. The MR element 50 may be a TMR (tunnel magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to the angle that the direction of magnetization of the free layer 54 makes with respect to the direction of magnetization of the magnetization fixed layer 52. The resistance value is at its minimum when this angle is 0° and at its maximum when the angle is 180°. In each MR element 50, the free layer 54 has shape anisotropy such that its easy magnetization axis direction is perpendicular to the magnetization direction of the fixed magnetization layer 52. As a means of setting the easy magnetization axis in a predetermined direction for the free layer 54, a magnet can be used to apply a bias magnetic field to the free layer 54.

[0038] The MR element 50 further includes an antiferromagnetic layer 51. The antiferromagnetic layer 51, magnetization fixed layer 52, gap layer 53, and free layer 54 are stacked in this order. The antiferromagnetic layer 51 is made of an antiferromagnetic material and creates exchange coupling with the magnetization fixed layer 52 to fix the magnetization direction of the magnetization fixed layer 52. The magnetization fixed layer 52 may be a so-called self-pinned fixed layer (Synthetic Ferri Pinned layer, SFP layer). The self-pinned fixed layer has a stacked ferri structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and the two ferromagnetic layers are antiferromagnetically coupled. If the magnetization fixed layer 52 is a self-pinned fixed layer, the antiferromagnetic layer 51 may be omitted.

[0039] Note that the arrangement of layers 51-54 in the MR element 50 may be reversed vertically from the arrangement shown in Figure 11.

[0040] In Figures 4 to 6, the filled-in arrows represent the direction of magnetization of the magnetization fixed layer 52 of the MR element 50. The open-circle arrows represent the direction of magnetization of the free layer 54 of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0041] Here, the first, second, third, and fourth magnetization directions are defined as follows: The first magnetization direction is one direction intersecting the axis parallel to the Z direction (hereinafter referred to as the Z-axis). The second magnetization direction is one direction intersecting the Z-axis and opposite to the first magnetization direction. The third magnetization direction is one direction intersecting the Z-axis and perpendicular to the first magnetization direction. The fourth magnetization direction is one direction intersecting the Z-axis and opposite to the third magnetization direction.

[0042] In the first detection circuit 10, the first magnetization direction is the U direction, the second magnetization direction is the -U direction, the third magnetization direction is the V direction, and the fourth magnetization direction is the -V direction. In the example shown in Figure 4, the magnetization of the magnetization fixed layer 52 in each of the first and third resistive sections R11 and R13 includes a component in the first magnetization direction (U direction). The magnetization of the magnetization fixed layer 52 in each of the second and fourth resistive sections R12 and R14 includes a component in the second magnetization direction (-U direction).

[0043] Furthermore, in the example shown in Figure 4, the magnetization of the free layer 54 in each of the first and second resistive sections R11 and R12 includes a component in the third magnetization direction (V direction) when no target magnetic field is applied to the first MR element 50A. free layer 54 The magnetization of the first MR element 50A includes a component in the fourth magnetization direction (-V direction) when no target magnetic field is applied to it.

[0044] Furthermore, if the magnetization of the magnetized fixed layer 52 includes a component in a specific magnetization direction, this component may be the main component of the magnetization of the magnetized fixed layer 52. Alternatively, the magnetization of the magnetized fixed layer 52 does not need to include a component in a direction perpendicular to the specific magnetization direction. In this embodiment, if the magnetization of the magnetized fixed layer 52 includes a component in a specific magnetization direction, the direction of the magnetization of the magnetized fixed layer 52 will be the specific magnetization direction or approximately the specific magnetization direction.

[0045] Similarly, if the magnetization of the free layer 54 when no target magnetic field is applied to the free layer 54 includes a component in a specific magnetization direction, the component in the specific magnetization direction may be the main component of the magnetization of the free layer 54. Alternatively, the magnetization of the free layer 54 in the above case may not include a component in a direction perpendicular to the specific magnetization direction. In this embodiment, if the magnetization of the free layer 54 in the above case includes a component in a specific magnetization direction, the direction of the magnetization of the free layer 54 in the above case will be the specific magnetization direction or approximately the specific magnetization direction.

[0046] The first detection circuit 10 is configured such that the magnetization of the free layer 54 is in the direction described above when no target magnetic field is applied to the first detection circuit 10. Specifically, each free layer 54 of the multiple first MR elements 50A of the first detection circuit 10 has shape anisotropy such that the easy magnetization axis direction is parallel to the third magnetization direction (V direction). Note that the direction parallel to the third magnetization direction (V direction) is also the direction parallel to the fourth magnetization direction (-V direction).

[0047] In the second detection circuit 20, the first magnetization direction is the W1 direction, the second magnetization direction is the -W1 direction, the third magnetization direction is the U direction, and the fourth magnetization direction is the -U direction. If we replace the first detection circuit 10, resistors R11, R12, R13, R14, first MR element 50A, U direction, -U direction, V direction, and -V direction in the description of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 in the first detection circuit 10 with the second detection circuit 20, resistors R21, R22, R23, R24, second MR element 50B, W1 direction, -W1 direction, U direction, and -U direction, respectively, then we get a description of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 in the second detection circuit 20.

[0048] In the third detection circuit 30, the first magnetization direction is in the W2 direction, the second magnetization direction is in the -W2 direction, the third magnetization direction is in the U direction, and the fourth magnetization direction is in the -U direction. If we replace the first detection circuit 10, resistors R11, R12, R13, R14, first MR element 50A, U direction, -U direction, V direction, and -V direction in the description of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 in the first detection circuit 10 with the third detection circuit 30, resistors R31, R32, R33, R34, third MR element 50C, W2 direction, -W2 direction, U direction, and -U direction, respectively, then we get a description of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 in the third detection circuit 30.

[0049] The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field in a predetermined direction to the free layer 54 of each of the multiple first MR elements 50A, multiple second MR elements 50B, and multiple third MR elements 50C. In this embodiment, the magnetic field generator includes a first coil 70 that applies a magnetic field in a predetermined direction to each of the free layer 54 of the first MR elements 50A, and a second coil 80 that applies a magnetic field in a predetermined direction to each of the free layer 54 of the multiple second MR elements 50B and multiple third MR elements 50C. The first chip 2 includes the first coil 70. The second chip 3 includes the second coil 80.

[0050] The specific structures of the first chip 2 and the second chip 3 will be described in detail below. Figure 8 shows a portion of the cross-section at the position indicated by line 8-8 in Figure 7.

[0051] The first chip 2 includes a substrate 201 having an upper surface 201a, insulating layers 202, 203, 204, 207, 208, 209, 210, a plurality of lower electrodes 61A, a plurality of upper electrodes 62A, a plurality of lower coil elements 71, and a plurality of upper coil elements 72. The upper surface 201a of the substrate 201 is assumed to be parallel to the XY plane. The Z direction is also a unidirectional direction perpendicular to the upper surface 201a of the substrate 201. Note that a coil element is a part of a coil winding.

[0052] The insulating layer 202 is placed on the substrate 201. The multiple lower coil elements 71 are placed on the insulating layer 202. The insulating layer 203 is placed on the insulating layer 202 around the multiple lower coil elements 71. The insulating layer 204 is placed on the multiple lower coil elements 71 and the insulating layer 203.

[0053] Multiple lower electrodes 61A are arranged on an insulating layer 204. An insulating layer 207 is arranged around the multiple lower electrodes 61A on top of the insulating layer 204. Multiple first MR elements 50A are arranged on top of the multiple lower electrodes 61A. An insulating layer 208 is arranged around the multiple first MR elements 50A on top of the multiple lower electrodes 61A and the insulating layer 207. Multiple upper electrodes 62A are arranged on top of the multiple first MR elements 50A and the insulating layer 208. An insulating layer 209 is arranged around the multiple upper electrodes 62A on top of the insulating layer 208.

[0054] The insulating layer 210 is placed on top of the multiple upper electrodes 62A and the insulating layer 209. The multiple upper coil elements 72 are placed on top of the insulating layer 210. The first chip 2 may further include an insulating layer (not shown) that covers the multiple upper coil elements 72 and the insulating layer 210. In Figure 7, the insulating layer 204, the multiple first MR elements 50A, and the multiple upper coil elements 72 are shown as components of the first chip 2.

[0055] The upper surface 201a of the substrate 201 is parallel to the XY plane, and the upper surfaces of each of the multiple lower electrodes 61A are also parallel to the XY plane. Therefore, in the above state, it can be said that the multiple first MR elements 50A are arranged on a plane parallel to the XY plane.

[0056] As shown in Figure 7, the multiple first MR elements 50A are arranged so that multiple elements are lined up in the U direction and multiple elements are lined up in the V direction. The multiple first MR elements 50A are connected in series by multiple lower electrodes 61A and multiple upper electrodes 62A. Two adjacent first MR elements 50A may or may not be offset in a direction parallel to the V direction when viewed from the Z direction.

[0057] Here, with reference to Figure 11, the method of connecting multiple first MR elements 50A will be described in detail. In Figure 11, reference numeral 61 indicates a lower electrode corresponding to any MR element 50, and reference numeral 62 indicates an upper electrode corresponding to any MR element 50. As shown in Figure 11, each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 in the longitudinal direction. On the upper surface of the lower electrode 61, MR elements 50 are arranged near both ends in the longitudinal direction. Each upper electrode 62 also has an elongated shape and is arranged on two adjacent lower electrodes 61 in the longitudinal direction to electrically connect two adjacent MR elements 50.

[0058] Although not shown, one MR element 50 located at the end of a row of multiple MR elements 50 arranged in a single line is connected to another MR element 50 located at the end of an adjacent row of multiple MR elements 50 in a direction intersecting the longitudinal direction of the lower electrode 61. These two MR elements 50 are connected to each other by electrodes (not shown). The electrodes (not shown) may be electrodes connecting the lower surfaces of the two MR elements 50 or the upper surfaces of the two MR elements 50.

[0059] If the MR element 50 shown in Figure 11 is the first MR element 50A, then the lower electrode 61 shown in Figure 11 corresponds to the lower electrode 61A, and the upper electrode 62 shown in Figure 11 corresponds to the upper electrode 62A. In this case, the longitudinal direction of the lower electrode 61 is parallel to the V direction.

[0060] In this embodiment, a multilayer film including an antiferromagnetic layer 51, a magnetization-fixed layer 52, a gap layer 53, and a free layer 54 is described as the MR element 50. However, the MR element in this embodiment may also consist of this multilayer film, a lower electrode 61, and an upper electrode 62. The multilayer film includes a plurality of magnetic films.

[0061] Each of the multiple upper coil elements 72 extends in a direction parallel to the Y direction. Furthermore, the multiple upper coil elements 72 are arranged so as to be aligned in the X direction. In this embodiment in particular, when viewed from the Z direction, each of the multiple first MR elements 50A has two upper coil elements 72 overlapping.

[0062] Each of the multiple lower coil elements 71 extends in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 71 are arranged so as to be aligned in the X direction. The shape and arrangement of the multiple lower coil elements 71 may be the same as or different from the shape and arrangement of the multiple upper coil elements 72.

[0063] In the examples shown in Figures 7 and 8, the multiple lower coil elements 71 and the multiple upper coil elements 72 are electrically connected to constitute a first coil 70 that applies a magnetic field parallel to the X direction to each of the free layers 54 of the multiple first MR elements 50A. The first coil 70 may also be configured to apply a magnetic field in the X direction to the free layers 54 of the first and second resistors R11 and R12, and a magnetic field in the -X direction to the free layers 54 of the third and fourth resistors R13 and R14. The first coil 70 may also be controlled by a processor 40.

[0064] Next, the structure of the second tip 3 will be described with reference to Figures 9 and 10. Figure 10 shows a portion of the cross-section at the position indicated by line 10-10 in Figure 9.

[0065] The second chip 3 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 307, 308, 309, 310, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, a plurality of lower coil elements 81, and a plurality of upper coil elements 82. The upper surface 301a of the substrate 301 is assumed to be parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 301a of the substrate 301.

[0066] The insulating layer 302 is placed on the substrate 301. Multiple lower coil elements 81 are placed on the insulating layer 302. The insulating layer 303 is placed on the insulating layer 302 around the multiple lower coil elements 81. Insulating layers 304 and 305 are laminated in this order on the multiple lower coil elements 81 and insulating layer 303.

[0067] Multiple lower electrodes 61B and multiple lower electrodes 61C are arranged on an insulating layer 305. An insulating layer 307 is arranged on the insulating layer 305 around the multiple lower electrodes 61B and multiple lower electrodes 61C. Multiple second MR elements 50B are arranged on the multiple lower electrodes 61B. Multiple third MR elements 50C are arranged on the multiple lower electrodes 61C. An insulating layer 308 is arranged on the multiple lower electrodes 61B, multiple lower electrodes 61C and insulating layer 307 around the multiple second MR elements 50B and multiple third MR elements 50C. Multiple upper electrodes 62B are arranged on the multiple second MR elements 50B and insulating layer 308. Multiple upper electrodes 62C are arranged on the multiple third MR elements 50C and insulating layer 308. An insulating layer 309 is arranged on the insulating layer 308 around the multiple upper electrodes 62B and multiple upper electrodes 62C.

[0068] The insulating layer 310 is positioned on a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, and an insulating layer 309. A plurality of upper coil elements 82 are positioned on the insulating layer 310. The second tip 3 may further include an insulating layer (not shown) covering the plurality of upper coil elements 82 and the insulating layer 310.

[0069] The second chip 3 includes a support member that supports a plurality of second MR elements 50B and a plurality of third MR elements 50C. The support member has at least one inclined surface that is inclined with respect to the upper surface 301a of the substrate 301. In this embodiment in particular, the support member is composed of an insulating layer 305. Figure 9 shows the insulating layer 305, the plurality of second MR elements 50B, the plurality of third MR elements 50C, and the plurality of upper coil elements 82 among the components of the second chip 3.

[0070] The insulating layer 305 has multiple convex surfaces 305c that protrude in the direction away from the upper surface 301a of the substrate 301 (Z direction). Each of the multiple convex surfaces 305c extends in a direction parallel to the U direction. The overall shape of the convex surfaces 305c is a triangular roof shape formed by moving the triangular shape of the convex surfaces 305c shown in Figure 10 along the direction parallel to the U direction. Furthermore, the multiple convex surfaces 305c are arranged in a direction parallel to the V direction.

[0071] Each of the multiple convex surfaces 305c has an upper end that is furthest from the upper surface 301a of the substrate 301. In this embodiment, the upper end of each of the multiple convex surfaces 305c extends in a direction parallel to the U direction. Now, let us focus on any one of the multiple convex surfaces 305c. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is the surface of the convex surface 305c that is on the V direction side of the upper end of the convex surface 305c. The second inclined surface 305b is the surface of the convex surface 305c that is on the -V direction side of the upper end of the convex surface 305c. The upper end of the convex surface 305c may be the boundary between the first inclined surface 305a and the second inclined surface 305b.

[0072] The upper surface 301a of the substrate 301 is parallel to the XY plane. The first inclined surface 305a and the second inclined surface 305b are each inclined with respect to the upper surface 301a of the substrate 301, i.e., the XY plane. In a cross section perpendicular to the upper surface 301a of the substrate 301, the distance between the first inclined surface 305a and the second inclined surface 305b decreases as the distance from the upper surface 301a of the substrate 301 increases.

[0073] In this embodiment, since there are multiple convex surfaces 305c, there are also multiple first inclined surfaces 305a and multiple second inclined surfaces 305b. The insulating layer 305 has multiple first inclined surfaces 305a and multiple second inclined surfaces 305b.

[0074] The insulating layer 305 includes a plurality of protrusions, each projecting in the Z direction. Each of the plurality of protrusions extends in a direction parallel to the U direction. The convex surface 305c is formed by the upper surface of the insulating layer 305. The plurality of protrusions are also arranged in a direction parallel to the V direction.

[0075] Multiple lower electrodes 61B are arranged on multiple first inclined surfaces 305a. Multiple lower electrodes 61C are arranged on multiple second inclined surfaces 305b. As described above, since each of the first inclined surface 305a and the second inclined surface 305b is inclined with respect to the upper surface 301a of the substrate 301, i.e., the XY plane, the upper surfaces of each of the multiple lower electrodes 61B and each of the multiple lower electrodes 61C are also inclined with respect to the XY plane. Therefore, it can be said that the multiple second MR elements 50B and the multiple third MR elements 50C are arranged on inclined surfaces that are inclined with respect to the XY plane. The insulating layer 305 is a member for supporting each of the multiple second MR elements 50B and the multiple third MR elements 50C so that they are inclined with respect to the XY plane.

[0076] In this embodiment, each of the multiple first inclined surfaces 305a is a plane parallel to the U direction and the W1 direction. Each of the multiple second inclined surfaces 305b is a plane parallel to the U direction and the W2 direction.

[0077] Although not shown in the figures, the insulating layer 305 further has flat surfaces surrounding the plurality of convex surfaces 305c. The plurality of convex surfaces 305c may protrude from the flat surfaces in the Z direction. Alternatively, the plurality of convex surfaces 305c may be arranged with a predetermined interval between them such that a flat surface is formed between two adjacent convex surfaces 305c. Or, the insulating layer 305 may have grooves recessed in the -Z direction from the flat surfaces. In this case, the plurality of convex surfaces 305c may be located within the grooves.

[0078] Furthermore, the convex surface 305c may be a semi-cylindrical curved surface formed by moving a curved shape (arch shape) along a direction parallel to the U direction. In this case, the first inclined surface 305a becomes a curved surface. The second MR element 50B curves along the curved surface (first inclined surface 305a). Even in this case, for convenience, the direction of magnetization of the magnetization fixed layer 52 of the second MR element 50B is defined as a linear direction as described above. Similarly, the second inclined surface 305b becomes a curved surface. The third MR element 50C curves along the curved surface (second inclined surface 305b). Even in this case, for convenience, the direction of magnetization of the magnetization fixed layer 52 of the third MR element 50C is defined as a linear direction as described above.

[0079] As shown in Figure 9, the multiple second MR elements 50B are arranged so that multiple elements are lined up in the U direction and multiple elements are lined up in the V direction. Multiple second MR elements 50B are lined up in a row on one first inclined surface 305a. Similarly, the multiple third MR elements 50C are arranged so that multiple elements are lined up in the U direction and multiple elements are lined up in the V direction. Multiple third MR elements 50C are lined up in a row on one second inclined surface 305b. In this embodiment, the rows of multiple second MR elements 50B and the rows of multiple third MR elements 50C are arranged alternately in a direction parallel to the V direction.

[0080] Furthermore, one adjacent second MR element 50B and one adjacent third MR element 50C may or may not be offset in a direction parallel to the U direction when viewed from the Z direction. Also, two adjacent second MR elements 50B separated by one third MR element 50C may or may not be offset in a direction parallel to the U direction when viewed from the Z direction. Also, two adjacent third MR elements 50C separated by one second MR element 50B may or may not be offset in a direction parallel to the U direction when viewed from the Z direction.

[0081] Multiple second MR elements 50B are connected in series by multiple lower electrodes 61B and multiple upper electrodes 62B. The explanation of the connection method for multiple first MR elements 50A described above also applies to the connection method for multiple second MR elements 50B. When the MR element 50 shown in Figure 11 is a second MR element 50B, the lower electrode 61 shown in Figure 11 corresponds to the lower electrode 61B, and the upper electrode 62 shown in Figure 11 corresponds to the upper electrode 62B. In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

[0082] Similarly, multiple third MR elements 50C are connected in series by multiple lower electrodes 61C and multiple upper electrodes 62C. The explanation above regarding the connection method of multiple first MR elements 50A also applies to the connection method of multiple third MR elements 50C. When the MR element 50 shown in Figure 11 is a third MR element 50C, the lower electrode 61 shown in Figure 11 corresponds to the lower electrode 61C, and the upper electrode 62 shown in Figure 11 corresponds to the upper electrode 62C. In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

[0083] Each of the multiple upper coil elements 82 extends in a direction parallel to the Y direction. Furthermore, the multiple upper coil elements 82 are arranged so as to be aligned in the X direction. In this embodiment in particular, when viewed from the Z direction, two upper coil elements 82 overlap each of the multiple second MR elements 50B and the multiple third MR elements 50C.

[0084] Each of the multiple lower coil elements 81 extends in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 81 are arranged so as to be aligned in the X direction. The shape and arrangement of the multiple lower coil elements 81 may be the same as or different from the shape and arrangement of the multiple upper coil elements 82.

[0085] In the examples shown in Figures 9 and 10, the multiple lower coil elements 81 and the multiple upper coil elements 82 are electrically connected to constitute a second coil 80 that applies a magnetic field parallel to the X direction to the free layers 54 of each of the multiple second MR elements 50B and the multiple third MR elements 50C. The second coil 80 may also be configured to apply a magnetic field in the X direction to the free layers 54 of the first and second resistors R21, R22 of the second detection circuit 20 and the first and second resistors R31, R32 of the third detection circuit 30, and to apply a magnetic field in the -X direction to the free layers 54 of the third and fourth resistors R23, R24 of the second detection circuit 20 and the third and fourth resistors R33, R34 of the third detection circuit 30. The second coil 80 may also be controlled by the processor 40.

[0086] Next, the first to third detection signals will be described. First, the first detection signal will be described with reference to Figure 4. When the intensity of the component of the target magnetic field parallel to the U direction changes, the resistance values ​​of each of the resistors R11 to R14 of the first detection circuit 10 change such that the resistance values ​​of resistors R11 and R13 increase while the resistance values ​​of resistors R12 and R14 decrease, or the resistance values ​​of resistors R11 and R13 decrease while the resistance values ​​of resistors R12 and R14 increase. As a result, the potentials of the signal output terminals E11 and E12 change. The first detection circuit 10 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S11, and a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S12.

[0087] Next, the second detection signal will be explained with reference to Figure 5. When the intensity of the component of the target magnetic field parallel to the W1 direction changes, the resistance values ​​of the resistors R21 to R24 of the second detection circuit 20 change such that the resistance values ​​of resistors R21 and R23 increase while the resistance values ​​of resistors R22 and R24 decrease, or the resistance values ​​of resistors R21 and R23 decrease while the resistance values ​​of resistors R22 and R24 increase. As a result, the potentials of the signal output terminals E21 and E22 change. The second detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S21, and a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S22.

[0088] Next, the third detection signal will be described with reference to Figure 6. When the intensity of the component of the target magnetic field parallel to the W2 direction changes, the resistance values ​​of the resistors R31 to R34 of the third detection circuit 30 change such that the resistance values ​​of resistors R31 and R33 increase while the resistance values ​​of resistors R32 and R34 decrease, or the resistance values ​​of resistors R31 and R33 decrease while the resistance values ​​of resistors R32 and R34 increase. As a result, the potentials of the signal output terminals E31 and E32 change. The third detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S31, and a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S32.

[0089] Next, the configuration and operation of the processor 40 will be described. The processor 40 is configured to generate a first detection value based on the first detection signals S11 and S12, and to generate a second detection value and a third detection value based on the second detection signals S21 and S22 and the third detection signals S31 and S32. The first detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the U direction. The second detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the V direction. The third detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the Z direction. Hereinafter, the first detection value will be denoted by the symbol Su, the second detection value by the symbol Sv, and the third detection value by the symbol Sz.

[0090] Figure 12 is a functional block diagram showing the configuration of the processor 40. The processor 40 includes a first arithmetic circuit 41, a second arithmetic circuit 42, and a correction circuit 43. The first arithmetic circuit 41 is configured to perform a first generation process. The first generation process is a process that generates a first initial detection value Sup corresponding to a first detection value Su using first detection signals S11 and S12.

[0091] In this embodiment, the first arithmetic circuit 41 generates a first initial detection value Sup by performing a calculation that includes determining the difference S11-S12 between the first detection signal S11 and the first detection signal S12. The first initial detection value Sup may be the difference S11-S12 itself, or it may be the difference S11-S12 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0092] The second arithmetic circuit 42 is configured to execute at least a portion of the second generation process. The second generation process includes a process to generate a second initial detection value Svp corresponding to a second detection value Sv, and a process to generate a third initial detection value Szp corresponding to a third detection value Sz. At least the second detection signals S21 and S22 are used in the process to generate the second initial detection value Svp. In this embodiment, the second detection signals S21 and S22 and the third detection signals S31 and S32 are used in both the process to generate the second initial detection value Svp and the process to generate the third initial detection value Szp.

[0093] In this embodiment, the second generation process includes the first process, the second process, and the third process. The first process is a process that generates a first value S1 using the second detection signals S21 and S22. The second process is a process that generates a second value S2 using the third detection signals S31 and S32. The third process is a process that generates a second initial detection value Svp and a third initial detection value Szp using the first value S1 and the second value S2.

[0094] In this embodiment, the second arithmetic circuit 42 is configured to perform a first process and a second process. The first process is a process that generates a first value S1 by performing an operation that includes calculating the difference S21-S22 between the second detection signal S21 and the second detection signal S22. The second process is a process that generates a second value S2 by performing an operation that includes calculating the difference S31-S32 between the third detection signal S31 and the third detection signal S32.

[0095] The third process involves calculating values ​​S3 and S4 using the following equations (1) and (2).

[0096] S3 = (S2 + S1) / (2cosα) …(1) S4 = (S2 - S1) / (2sinα) …(2)

[0097] The third process further includes generating second and third initial detection values ​​Svp and Szp using values ​​S3 and S4. The second initial detection value Svp generated by the third process may be value S3 itself, or it may be value S3 to which predetermined corrections such as gain adjustment and offset adjustment have been applied. Similarly, the third initial detection value Szp generated by the third process may be value S4 itself, or it may be value S4 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0098] The correction circuit 43 generates first to third detection values ​​Su, Sv, and Sz using first to third initial detection values ​​Sup, Svp, and Szp. In this embodiment in particular, the correction circuit 43 is configured to perform a third process of the second generation process, a first correction process, a second correction process, and a determination process in order to generate the first to third detection values ​​Su, Sv, and Sz.

[0099] In the first correction process, the first initial detection value Sup is updated at least once. Hereafter, the last updated first initial detection value Sup will be referred to as the latest first initial detection value Sup. For convenience, the first initial detection value Sup after the first generation process is executed but before the first first correction process is executed will also be referred to as the latest first initial detection value Sup.

[0100] In the second correction process, the second initial detection value Svp and the third initial detection value Szp are each updated at least once. Hereafter, the last updated second initial detection value Svp will be referred to as the latest second initial detection value Svp, and the last updated third initial detection value Szp will be referred to as the latest third initial detection value Szp.

[0101] The first correction process is to update the first initial detection value Sup (the latest first initial detection value Sup) by correcting it using the second correction value Svc generated from the latest second initial detection value Svp.

[0102] The second correction value Svc may be a value calculated by an operation that includes multiplying the latest second initial detection value Svp by the second correction coefficient. Hereinafter, the last calculated second correction value Svc will be referred to as the latest second correction value Svc. The first correction process may be a process of calculating (updating) the first initial detection value Sup by substituting the latest first initial detection value Sup and the latest second correction value Svc into an expression that uses the first initial detection value Sup and the second correction value Svc. The above expression may include a first operation that includes multiplying the latest first initial detection value Sup by the second correction value Svc, and a second operation that adds the value obtained by the first operation to the latest first initial detection value Sup or subtracts it from the latest first initial detection value Sup.

[0103] The second correction process updates the second and third initial detection values ​​Svp and Szp by correcting the second initial detection value Svp (the latest second initial detection value Svp) and the third initial detection value Szp (the latest third initial detection value Szp) using the first correction value Suc generated from the latest first initial detection value Sup. In this embodiment, the second correction process specifically includes the fourth process, the fifth process, and the sixth process. The fourth process updates the first and second values ​​S1 and S2 by correcting the first and second values ​​S1 and S2 using the first correction value Suc. The fifth process generates the second and third initial detection values ​​Svp and Szp using the latest first and second values ​​S1 and S2. The sixth process updates the second and third initial detection values ​​Svp and Szp using the second and third initial detection values ​​Svp and Szp generated by the fifth process. Note that the latest first value S1 refers to the first value S1 that was last updated. Similarly, the latest second value S2 refers to the second value S2 that was last updated. For convenience, the first value S1 and the second value S2 after the first and second processes have been executed but before the first execution of the third process are also referred to as the latest first value S1 and the latest second value S2.

[0104] The content of the fifth process is essentially the same as the third process of the second generation process. That is, the second correction process essentially includes the third process of the second generation process. The fifth process includes the process of calculating values ​​S3 and S4 using the latest first and second values ​​S1 and S2 and equations (1) and (2), and the process of generating second and third initial detection values ​​Svp and Szp using the values ​​S3 and S4.

[0105] The first correction value Suc may be a value calculated by an operation that includes multiplying the latest first initial detection value Sup by the first correction coefficient. Hereinafter, the last calculated first correction value Suc will be referred to as the latest first correction value Suc. The fourth process of the second correction process may be a process that calculates (updates) the first value S1 by substituting the latest first value S1 and the latest first correction value Suc into a first equation expressed using the first value S1 and the first correction value Suc, and calculates (updates) the second value S2 by substituting the latest second value S2 and the latest first correction value Suc into a second equation expressed using the second value S2 and the first correction value Suc. The first equation may be an expression that includes a third operation that includes multiplying the latest first value S1 by the first correction value Suc, and a fourth operation that adds the value obtained by the third operation to the latest first value S1 or subtracts it from the latest first value S1. The second expression may also include a fifth operation, which involves multiplying the latest second value S2 by the first correction value Suc, and a sixth operation, which involves adding the value obtained by the fifth operation to the latest second value S2 or subtracting it from the latest second value S2.

[0106] The determination process determines the most recent first initial detection value Sup as the first detection value Su, the most recent second initial detection value Svp as the second detection value Sv, and the most recent third initial detection value Szp as the third detection value Sz. The correction circuit 43 performs the first correction process and the second correction process alternately one or more times, and then performs the determination process. The correction circuit 43 may perform the first correction process and the second correction process once each, twice each, or three or more times each.

[0107] The correction circuit 43 may perform the update of the second and third initial detection values ​​Svp and Szp before the correction circuit 43. In other words, the correction circuit 43 may perform the first second correction process before performing the first first correction process.

[0108] The first second correction process is executed after the first and second processes of the second generation process have been executed. Furthermore, as mentioned above, the second correction process essentially includes the third process of the second generation process. Therefore, the execution of the first second correction process effectively triggers the execution of the second generation process.

[0109] Note that the configuration of the processor 40 is not limited to the example shown in Figure 12. For example, the first arithmetic circuit 41, the second arithmetic circuit 42, and the correction circuit 43 may be substantially a single circuit. In this case, the single circuit may be configured to perform all the processing performed by the first arithmetic circuit 41, the second arithmetic circuit 42, and the correction circuit 43. Alternatively, instead of providing the correction circuit 43, the first arithmetic circuit 41 may perform some of the processing performed by the correction circuit 43 (processing related to the first initial detection value Sup and the first detection value Su), and the second arithmetic circuit 42 may perform other parts of the processing performed by the correction circuit 43 (processing related to the second and third initial detection values ​​Svp, Szp and the second and third detection values ​​Sv, Sz). In this case, the first arithmetic circuit 41 and the second arithmetic circuit 42 may be configured to send and receive the first and second initial detection values ​​Sup, Svp.

[0110] Next, the effects of the series of processes performed by the correction circuit 43 will be explained. First, the first to third detection circuits of the comparative example will be described. The configuration of the first detection circuit of the comparative example is the same as the configuration of the first detection circuit 10 shown in Figure 4, except for the direction of magnetization of each free layer 54 of the multiple first MR elements 50A when no target magnetic field is applied to the multiple first MR elements 50A. In the first detection circuit of the comparative example, the direction of magnetization of the free layer 54 is in the V direction for all of the multiple first MR elements 50A in the above case.

[0111] The configuration of the second detection circuit in the comparative example is the same as the configuration of the second detection circuit 20 shown in Figure 5, except for the direction of magnetization of the free layer 54 of each of the multiple second MR elements 50B when no target magnetic field is applied to the multiple second MR elements 50B. In the second detection circuit of the comparative example, the direction of magnetization of the free layer 54 is in the U direction for all of the multiple second MR elements 50B in the above case.

[0112] The configuration of the third detection circuit in the comparative example is the same as the configuration of the third detection circuit 30 shown in Figure 6, except for the direction of magnetization of the free layer 54 of each of the multiple third MR elements 50C when no target magnetic field is applied to the multiple third MR elements 50C. In the third detection circuit of the comparative example, the direction of magnetization of the free layer 54 is in the U direction for all of the multiple third MR elements 50C in the above case.

[0113] In the first detection circuit of the comparative example, the magnetic field parallel to the V direction (the component of the target magnetic field parallel to the V direction) has the effect of changing the anisotropic magnetic field based on shape anisotropy where the easy magnetization axis direction is parallel to the V direction. This anisotropic magnetic field acts on the magnetization of the free layer 54. Therefore, in the first detection circuit of the comparative example, the direction of magnetization of the free layer 54 when detecting the component of the target magnetic field parallel to the U direction changes depending on the presence or absence of a magnetic field parallel to the V direction and changes in its strength. As a result, the first detection signals S11 and S12 deviate from the first detection signals S11 and S12 when detecting the component of the target magnetic field parallel to the U direction in the absence of a magnetic field parallel to the V direction, and consequently, the difference S11-S12, which substantially corresponds to the first detection value Su, also deviates.

[0114] In contrast, in this embodiment, the magnetization direction of the free layer 54 is made different for each resistive section. In particular, in this embodiment, the magnetization direction of the free layer 54 is set so that the deviation of the first detection signals S11 and S12 caused by the magnetic field parallel to the V direction can be canceled out when calculating the difference S11-S12. As a result, according to this embodiment, the deviation of the difference S11-S12 caused by the magnetic field parallel to the V direction can be suppressed. Consequently, according to this embodiment, the error of the first detection value Su caused by the magnetic field parallel to the V direction can be reduced.

[0115] The description of the first detection circuit in the comparative example above also applies to the second and third detection circuits of the comparative example. In the second detection circuit of the comparative example, the second detection signals S21 and S22 deviate from the second detection signals S21 and S22 obtained when detecting the component of the target magnetic field parallel to the W1 direction in a state where there is no magnetic field parallel to the U direction, and as a result, the first value S1 also deviates. Similarly, in the third detection circuit of the comparative example, the third detection signals S31 and S32 deviate from the third detection signals S31 and S32 obtained when detecting the component of the target magnetic field parallel to the W2 direction in a state where there is no magnetic field parallel to the U direction, and as a result, the second value S2 also deviates. Because of these, the value S3 which substantially corresponds to the second detection value Sv and the value S4 which substantially corresponds to the third detection value Sz also deviate. In contrast, according to this embodiment, the deviation of values ​​S3 and S4 caused by the magnetic field parallel to the U direction can be suppressed. As a result, according to this embodiment, it is possible to reduce the errors in the second and third detected values ​​Sv and Sz caused by the magnetic field in a direction parallel to the U direction.

[0116] The series of processes performed by the correction circuit 43 are for further suppressing the deviations of the difference S11-S12, i.e., the deviation of the first initial detection value Sup, the deviation of value S3, i.e., the deviation of the second initial detection value Svp, and the deviation of value S4, i.e., the deviation of the third initial detection value Szp, which have been suppressed as described above. In the first correction process, the first initial detection value Sup is corrected using the second initial detection value Svp, which has a correspondence with the intensity of the component of the target magnetic field in the direction parallel to the V direction. By using the second initial detection value Svp, it becomes possible to correct the first initial detection value Sup in accordance with the presence or absence of a magnetic field in the direction parallel to the V direction and changes in its intensity. Specifically, since the second correction value Svc changes in accordance with the presence or absence of a magnetic field in the direction parallel to the V direction and changes in its intensity, the first initial detection value Sup can be corrected with high accuracy.

[0117] The second correction coefficient and the formula expressed using the aforementioned first initial detection value Sup and second correction value Svc may be defined such that the correction amount of the first initial detection value Sup increases as the deviation of the first initial detection value Sup increases, and the sign of the correction amount of the first initial detection value Sup changes depending on whether the deviation is such that the first initial detection value Sup decreases or increases. For example, if the deviation is such that the first initial detection value Sup decreases, the correction amount of the first initial detection value Sup corresponding to the amount of decrease in the first initial detection value Sup may be added to the first initial detection value Sup. Also, if the deviation is such that the first initial detection value Sup increases, the correction amount of the first initial detection value Sup corresponding to the amount of increase in the first initial detection value Sup may be subtracted from the first initial detection value Sup.

[0118] The above explanation of the first correction process also applies to the second correction process. That is, in the second correction process, the first and second values ​​S1 and S2 are corrected using the first initial detection value Sup, which corresponds to the intensity of the component of the target magnetic field parallel to the U direction. In effect, the second and third initial detection values ​​Svp and Szp are corrected using the first initial detection value Sup, which corresponds to the intensity of the component of the target magnetic field parallel to the U direction. By using the first initial detection value Sup, it becomes possible to correct the first and second values ​​S1 and S2 (the second and third initial detection values ​​Svp and Szp) in accordance with the presence or absence of a magnetic field parallel to the U direction and changes in its intensity. Specifically, since the first correction value Suc changes in accordance with the presence or absence of a magnetic field parallel to the U direction and changes in its intensity, the first and second values ​​S1 and S2 (the second and third initial detection values ​​Svp and Szp) can be corrected with high accuracy.

[0119] The first correction coefficient and the first and second equations mentioned above may be defined such that the correction amount for the second initial detection value Svp increases as the deviation of the second initial detection value Svp increases, and the sign of the correction amount for the second initial detection value Svp changes depending on whether the deviation is such that the second initial detection value Svp decreases or increases.

[0120] The first and second correction coefficients may be pre-selected so as to suppress deviations in the first initial detection value Sup, the second initial detection value Svp, and the third initial detection value Szp. The first and second correction coefficients may be determined using numerical analysis or the like based on multiple measurement results.

[0121] In contrast, if the first and second correction processes are to be applied to the first to third initial detection values ​​Sup, Svp, and Szp generated by the first to third detection circuits of the comparative example, it is necessary to change the content of the first and second correction processes, such as changing the sign of the first and second correction coefficients, depending on the direction of the applied magnetic field.

[0122] Incidentally, as a means of suppressing deviations in the first to third initial detection values ​​Sup, Svp, and Szp, it is conceivable to provide shields made of magnetic material to each of the first to third detection circuits 10, 20, and 30 so that magnetic fields other than those being detected are not applied. For example, the first detection circuit 10 could be provided with a shield configured to hardly attenuate the magnetic field in the direction parallel to the U direction, but to block or attenuate the magnetic field in the direction parallel to the V direction. Similarly, the second and third detection circuits 20 and 30 could be provided with shields configured to hardly attenuate the magnetic fields in the directions parallel to the W1 direction and the W2 direction, but to block or attenuate the magnetic field in the direction parallel to the U direction. However, in this embodiment, deviations in the first to third initial detection values ​​Sup, Svp, and Szp are suppressed without providing shields to each of the first to third detection circuits 10, 20, and 30. As a result, according to this embodiment, the structure of the magnetic sensor 1 can be simplified.

[0123] Furthermore, in this embodiment, the first initial detection value Sup is generated using the first detection signals S11 and S12, which are generated by detecting the component of the target magnetic field in the direction parallel to the reference plane 4a, i.e., the XY plane (the component of the target magnetic field in the direction parallel to the U direction). The second and third initial detection values ​​Svp and Szp are generated using the second detection signals S21 and S22 and the third detection signals S31 and S32, which are generated by detecting the component of the target magnetic field in one direction inclined with respect to the reference plane 4a, i.e., the XY plane (the component of the target magnetic field in the direction parallel to the W1 direction) and the other component of the target magnetic field in the other direction inclined with respect to the reference plane 4a, i.e., the XY plane (the component of the target magnetic field in the direction parallel to the W2 direction). Thus, this embodiment is characterized by suppressing the deviation of each of the first to third initial detection values ​​Sup, Svp, and Szp, which are generated by detecting the component of the target magnetic field in the direction parallel to the XY plane and the component in the direction inclined with respect to the XY plane.

[0124] As described above, in this embodiment, the detected value corresponding to the component of the target magnetic field parallel to the U direction (first initial detected value Sup) is generated by detecting the component of the target magnetic field parallel to the U direction. However, the detected value corresponding to the component of the target magnetic field parallel to the V direction (second initial detected value Svp) is not generated by detecting the component of the target magnetic field parallel to the V direction, and the detected value corresponding to the component of the target magnetic field parallel to the Z direction (third initial detected value Szp) is also not generated by detecting the component of the target magnetic field parallel to the Z direction. Therefore, in this embodiment, the first initial detected value Sup can sometimes be generated with higher accuracy than the second and third initial detected values ​​Svp and Szp. In this case, the first to third initial detected values ​​Sup, Svp, and Szp can be updated with higher accuracy by performing a second correction process using the first initial detected value Sup before performing the first correction process.

[0125] Furthermore, in this embodiment, the first detection circuit 10 that generates the first detection signals S11 and S12 is included in the first chip 2, and the second detection circuit 20 that generates the second detection signals S21 and S22 and the third detection circuit 30 that generates the third detection signals S31 and S32 are included in the second chip 3. Thus, this embodiment is characterized by suppressing the deviations between the first to third initial detection values ​​Sup, Svp, and Szp, which are generated using the detection circuits included in each of the two physically separated chips.

[0126] Next, we will explain the results of a simulation that investigated the error of the second detected value Sv. In the simulation, a target magnetic field containing at least a component in the U direction and a component in the V direction was applied to the magnetic sensor device 100 to generate the first to third detected values ​​Su, Sv, and Sz. In the simulation, the difference S11-S12 and values ​​S3, S4 were corrected so that the first to third detected values ​​Su, Sv, and Sz represent the intensity of the component parallel to the U direction of the target magnetic field, the intensity of the component parallel to the V direction of the target magnetic field, and the intensity of the component parallel to the Z direction of the target magnetic field, respectively, to generate the first to third initial detected values ​​Sup, Svp, and Szp. In addition, in the simulation, the first second correction process was performed before the first first correction process was performed.

[0127] In the simulation, the determination process was executed after each alternating execution of the second and first correction processes to generate the first to third detected values ​​Su, Sv, and Sz. Furthermore, the error of the second detected value Sv was calculated by dividing the difference between the intensity of the V-direction component of the target magnetic field and the second detected value Sv by the intensity of the V-direction component of the target magnetic field.

[0128] Furthermore, in the simulation, the third process of the second generation process was executed before the first and second correction processes to obtain the second initial detected value Svp, and the error of the second detected value Sv when the number of executions of the first and second correction processes was 0 was calculated from this second initial detected value Svp. That is, the difference between the intensity of the component of the target magnetic field in the V direction and the above second initial detected value Svp was divided by the intensity of the component of the target magnetic field in the V direction, and this value was obtained as the error of the second detected value Sv when the number of executions of the first and second correction processes was 0. The error of the second detected value Sv when the number of executions of the first and second correction processes was 0 was 3.54%.

[0129] Furthermore, the error in the second detected value Sv was 0.13% when each of the first and second correction processes was performed once. Also, the error in the second detected value Sv was 0% when each of the first and second correction processes was performed twice and three times, respectively.

[0130] As can be seen from the simulation results, the error in the second detected value Sv can be reduced by performing the first and second correction processes once each. Furthermore, the error in the second detected value Sv can be reduced to almost zero by performing the first and second correction processes twice each. Even if the first and second correction processes are performed three times each, the error in the second detected value Sv remains almost zero. From the viewpoint of the load on the processor 40, it is preferable that the number of times each of the first and second correction processes is performed is two.

[0131] The explanation above for the second detection value Sv also applies to the first detection value Su and the third detection value Sz.

[0132] [Second Embodiment] Next, a magnetic sensor device according to a second embodiment of the present invention will be described. In this embodiment, the direction of magnetization of the free layer 54 of the MR element 50 is different from that of the first embodiment.

[0133] The magnetization direction of the free layer 54 of the MR element 50 will be described below using the first to fourth magnetization directions defined in the first embodiment. Figure 13 is a circuit diagram showing the circuit configuration of the first detection circuit 10. Figure 14 is a circuit diagram showing the circuit configuration of the second detection circuit 20. Figure 15 is a circuit diagram showing the circuit configuration of the third detection circuit 30.

[0134] Similar to the first embodiment, in the first detection circuit 10, the first magnetization direction is the U direction, the second magnetization direction is the -U direction, the third magnetization direction is the V direction, and the fourth magnetization direction is the -V direction. In this embodiment, the magnetization of the free layer 54 in each of the first and fourth resistive sections R11 and R14 includes a component in the third magnetization direction (V direction) when no target magnetic field is applied to the first MR element 50A. The magnetization of the free layer 54 in each of the second and third resistive sections R12 and R13 includes a component in the fourth magnetization direction (-V direction) when no target magnetic field is applied to the first MR element 50A.

[0135] Furthermore, in this embodiment, the first coil 70 (see Figure 3) may be configured to apply a magnetic field in the X direction to the free layers 54 in the first and fourth resistive sections R11 and R14, and a magnetic field in the -X direction to the free layers 54 in the second and third resistive sections R12 and R13.

[0136] Furthermore, similar to the first embodiment, in the second detection circuit 20, the first magnetization direction is in the W1 direction, the second magnetization direction is in the -W1 direction, the third magnetization direction is in the U direction, and the fourth magnetization direction is in the -U direction. In this embodiment, the magnetization of the free layer 54 in each of the first and fourth resistive sections R21 and R24 includes a component in the third magnetization direction (U direction) when no target magnetic field is applied to the second MR element 50B. The magnetization of the free layer 54 in each of the second and third resistive sections R22 and R23 includes a component in the fourth magnetization direction (-U direction) when no target magnetic field is applied to the second MR element 50B.

[0137] Furthermore, similar to the first embodiment, in the third detection circuit 30, the first magnetization direction is in the W2 direction, the second magnetization direction is in the -W2 direction, the third magnetization direction is in the U direction, and the fourth magnetization direction is in the -U direction. In this embodiment, the magnetization of the free layer 54 in each of the first and fourth resistive sections R31 and R34 includes a component in the third magnetization direction (U direction) when no target magnetic field is applied to the third MR element 50C. The magnetization of the free layer 54 in each of the second and third resistive sections R32 and R33 includes a component in the fourth magnetization direction (-U direction) when no target magnetic field is applied to the third MR element 50C.

[0138] Furthermore, in this embodiment, the second coil 80 (see Figure 3) may be configured to apply a magnetic field in the X direction to the free layers 54 in the first and fourth resistors R21, R24 of the second detection circuit 20 and the first and fourth resistors R31, R34 of the third detection circuit 30, and to apply a magnetic field in the -X direction to the free layers 54 in the second and third resistors R22, R23 of the second detection circuit 20 and the second and third resistors R32, R33 of the third detection circuit 30.

[0139] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0140] [Third Embodiment] Next, a third embodiment of the present invention will be described. The magnetic sensor device 100 according to this embodiment is composed of the magnetic sensor 101 in this embodiment and the processor 40 described in the first embodiment. The magnetic sensor 101 may have an external shape similar to that of the first chip 2 or the second chip 3 in the first embodiment.

[0141] The configuration of the magnetic sensor 101 according to this embodiment will be described below with reference to Figures 16 to 19. Figure 16 is a functional block diagram showing the configuration of the magnetic sensor device 100 according to this embodiment. Figure 17 is a circuit diagram showing the circuit configuration of the first detection circuit in this embodiment. Figure 18 is a circuit diagram showing the circuit configuration of the second detection circuit in this embodiment. Figure 19 is a circuit diagram showing the circuit configuration of the third detection circuit in this embodiment.

[0142] The magnetic sensor 101 comprises a first detection circuit 110, a second detection circuit 120, and a third detection circuit 130. Each of the first to third detection circuits 110, 120, and 130 includes multiple MR elements.

[0143] The first detection circuit 110 is configured to detect a component of the target magnetic field parallel to the U direction and generate first detection signals S111 and S112 that correspond to this component. The second detection circuit 120 is configured to detect a component of the target magnetic field parallel to the V direction and generate second detection signals S121 and S122 that correspond to this component. The third detection circuit 130 is configured to detect a component of the target magnetic field parallel to the Z direction and generate third detection signals S131 and S132 that correspond to this component.

[0144] The circuit configuration of the first detection circuit 110 is basically the same as the circuit configuration of the first detection circuit 10 in the first embodiment. In Figure 17, the first to fourth resistors of the first detection circuit 110, corresponding to the first to fourth resistors R11, R12, R13, and R14 of the first detection circuit 10, are indicated by the reference numerals R111, R112, R113, and R114, respectively.

[0145] The circuit configuration of the second detection circuit 120 is basically the same as the circuit configuration of the second detection circuit 20 in the first embodiment. In Figure 18, the first to fourth resistors of the second detection circuit 120, corresponding to the first to fourth resistors R21, R22, R23, and R24 of the second detection circuit 20, are indicated by the reference numerals R121, R122, R123, and R124, respectively.

[0146] The circuit configuration of the third detection circuit 130 is basically the same as the circuit configuration of the third detection circuit 30 in the first embodiment. In Figure 19, the first to fourth resistors of the third detection circuit 130, corresponding to the first to fourth resistors R31, R32, R33, and R34 of the third detection circuit 30, are indicated by the reference numerals R131, R132, R133, and R134, respectively.

[0147] The resistive sections R111-R114, R121-R124, and R131-R134 are composed of multiple MR elements. Hereinafter, the multiple MR elements of the magnetic sensor 101 will be denoted by reference numeral 150. The configuration of the MR element 150 may be the same as that of the MR element 50 described in the first embodiment. That is, the MR element 150 has at least a magnetization fixed layer 52, a free layer 54, and a gap layer 53 (see Figure 11).

[0148] In Figures 17 to 19, the filled arrows indicate the direction of magnetization of the magnetization fixed layer 52 of the MR element 150. In the example shown in Figure 17, the direction of magnetization of the magnetization fixed layer 52 in the first and third resistive sections R111 and R113 is in the U direction. The direction of magnetization of the magnetization fixed layer 52 in the second and fourth resistive sections R112 and R114 is in the -U direction. Furthermore, each free layer 54 of the multiple MR elements 150 of the first detection circuit 110 has shape anisotropy such that the easy magnetization axis direction is parallel to the V direction.

[0149] In the example shown in Figure 18, the magnetization direction of the magnetization fixed layer 52 in the first and third resistive sections R121 and R123 is in the V direction. The magnetization direction of the magnetization fixed layer 52 in the second and fourth resistive sections R122 and R124 is in the -V direction. Furthermore, the free layer 54 of each of the multiple MR elements 150 in the second detection circuit 120 has shape anisotropy such that the easy magnetization axis direction is parallel to the U direction.

[0150] Each free layer 54 of the multiple MR elements 150 in the third detection circuit 130 has shape anisotropy such that the easy magnetization axis direction is parallel to the V direction. The direction of magnetization of the magnetization fixed layer 52 in the third detection circuit 130 will be explained later.

[0151] Next, the specific structure of the magnetic sensor 101 will be described. The magnetic sensor 101 includes a substrate having an upper surface, a first part including a first detection circuit 110, a second part including a second detection circuit 120, and a third part including a third detection circuit 130. The upper surface of the substrate is assumed to be parallel to the XY plane. The first to third parts are formed on the substrate. The structure of the first part and the structure of the second part are the same as the structure of the first chip 2 (excluding the substrate 201) described in the first embodiment. The plurality of MR elements 150 included in the first part each have a shape that is elongated in the V direction. The plurality of MR elements 150 included in the second part each have a shape that is elongated in the U direction. The first and second parts may or may not include the first coil 70 described in the first embodiment.

[0152] Next, the structure of the third part of the magnetic sensor 101 will be described with reference to Figures 20 and 21. Figure 20 is a perspective view showing multiple MR elements 150 and multiple yokes. Figure 21 is a side view showing multiple MR elements 150 and multiple yokes.

[0153] The structure of the third part is basically the same as that of the first part. The third part further includes a plurality of yokes 151, each made of a soft magnetic material. Each of the plurality of yokes 151 may have a rectangular parallelepiped shape that is elongated in the V direction. Each of the plurality of yokes 151 is configured to receive an input magnetic field that includes an input magnetic field component in the direction parallel to the Z direction and generate an output magnetic field. The output magnetic field includes an output magnetic field component in the direction parallel to the U direction that changes in accordance with the input magnetic field component.

[0154] Each of the multiple yokes 151 has a first end face 151a and a second end face 151b located at both ends in a direction parallel to the U direction. In each of the multiple yokes 151, the first end face 151a is located at the -U direction end of the yoke 151, and the second end face 151b is located at the U direction end of the yoke 151. The multiple yokes 151 are also arranged in a direction parallel to the U direction.

[0155] As shown in Figures 20 and 21, in the third section, multiple MR elements 150 are arranged in a row along the first end face 150a, and multiple MR elements 150 are arranged in a row along the second end face 150b. Hereinafter, the multiple MR elements 150 arranged along the first end face 150a will be denoted by reference numeral 150A, and the multiple MR elements 150 arranged along the second end face 150b will be denoted by reference numeral 150B. In the third section, the multiple MR elements 150A and multiple MR elements 150B are arranged so that the rows of MR elements 150A and rows of MR elements 150B alternate in a direction parallel to the U direction. The multiple MR elements 150A and multiple MR elements 150B do not necessarily overlap with the multiple yokes 151 when viewed from above.

[0156] Although not shown in the diagram, the third part further includes a plurality of first lower electrodes, a plurality of second lower electrodes, a plurality of first upper electrodes, and a plurality of second upper electrodes. The plurality of MR elements 150A are connected in series by the plurality of first lower electrodes and the plurality of first upper electrodes. The plurality of MR elements 150B are connected in series by the plurality of second lower electrodes and the plurality of second upper electrodes.

[0157] Next, the multiple yokes 151 will be described in detail. When the direction of the input magnetic field component is in the Z direction, the direction of the output magnetic field component received by each of the multiple MR elements 150A is in the U direction, and the direction of the output magnetic field component received by each of the multiple MR elements 150B is in the -U direction. When the direction of the input magnetic field component is in the -Z direction, the direction of the output magnetic field component received by each of the multiple MR elements 150A is in the -U direction, and the direction of the output magnetic field component received by each of the multiple MR elements 150B is in the U direction.

[0158] Next, the first to third detection signals in this embodiment will be described. First, the first detection signal will be briefly described. The manner in which the resistance values ​​of each of the resistors R111 to R114 in the first detection circuit 110 change is the same as the manner in which the resistance values ​​of each of the resistors R11 to R14 in the first detection circuit 10 described in the first embodiment. The first detection circuit 110 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S111, and to generate a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S112.

[0159] Next, the second detection signal will be described with reference to Figure 18. When the intensity of the component of the target magnetic field parallel to the V direction changes, the resistance values ​​of the resistors R121 to R124 of the second detection circuit 120 change such that the resistance values ​​of resistors R121 and R123 increase while the resistance values ​​of resistors R122 and R124 decrease, or the resistance values ​​of resistors R121 and R123 decrease while the resistance values ​​of resistors R122 and R124 increase. As a result, the potentials of the signal output terminals E21 and E22 change. The second detection circuit 120 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S121, and a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S122.

[0160] Next, the third detection signal will be described with reference to Figures 19 to 21. The first resistor R131 and the second resistor R132 are composed of multiple MR elements 150A. The third resistor R133 and the fourth resistor R134 are composed of multiple MR elements 150B.

[0161] Here, the region in which the multiple MR elements 150 constituting the third detection circuit 130 are arranged is divided into a first region and a second region. The multiple MR elements 150A constituting the first resistor R131 and the multiple MR elements 150B constituting the fourth resistor R134 may be arranged in the first region. The multiple MR elements 150A constituting the second resistor R132 and the multiple MR elements 150B constituting the third resistor R133 may be arranged in the second region.

[0162] The direction of magnetization of the magnetization fixed layer 52 in each of the first and fourth resistive sections R131 and R134 is in the U direction. The direction of magnetization of the magnetization fixed layer 52 in each of the second and third resistive sections R132 and R133 is in the -U direction.

[0163] When the input magnetic field component is in the Z direction, the output magnetic field component received by the multiple MR elements 150A in the first and second resistors R131 and R132 is in the U direction, and the output magnetic field component received by the multiple MR elements 150B in the third and fourth resistors R133 and R134 is in the -U direction. In this case, compared to the state where there is no output magnetic field component, the resistance values ​​of the multiple MR elements 150A in the first resistor R131 and the multiple MR elements 150B in the third resistor R133 decrease, and the resistance values ​​of the first and third resistors R131 and R133 also decrease. Furthermore, compared to the state where there is no output magnetic field component, the resistance values ​​of the multiple MR elements 150A in the second resistor R132 and the multiple MR elements 150B in the fourth resistor R134 increase, and the resistance values ​​of the second and fourth resistors R132 and R134 also increase.

[0164] When the direction of the input magnetic field component is in the -Z direction, the direction of the output magnetic field component and the change in the resistance values ​​of the first to fourth resistors R131 to R134 are reversed compared to the case where the direction of the input magnetic field component is in the Z direction.

[0165] Thus, when the direction and intensity of the input magnetic field component change, the resistance values ​​of the resistors R131 to R134 of the third detection circuit 130 change such that the resistance values ​​of resistors R131 and R133 increase while the resistance values ​​of resistors R132 and R134 decrease, or the resistance values ​​of resistors R131 and R133 decrease while the resistance values ​​of resistors R132 and R134 increase. As a result, the potentials of the signal output terminals E31 and E32 change. The third detection circuit 130 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S131, and a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S132.

[0166] Next, the configuration and operation of the processor 40 in this embodiment will be described. Figure 22 is a functional block diagram showing the configuration of the processor 40 in this embodiment. In this embodiment, the processor 40 is configured to generate a first detection value Su corresponding to the component of the target magnetic field in the direction parallel to the U direction based on first detection signals S111 and S112, a second detection value Sv corresponding to the component of the target magnetic field in the direction parallel to the V direction based on second detection signals S121 and S122, and a third detection value Sz corresponding to the component of the target magnetic field in the direction parallel to the Z direction based on third detection signals S131 and S132.

[0167] The processor 40 in this embodiment includes a first arithmetic circuit 141, a second arithmetic circuit 142, and a third arithmetic circuit 143, instead of the first and second arithmetic circuits in the first embodiment. The first arithmetic circuit 141 is configured to perform a first generation process. The content of the first generation process in this embodiment is the same as in the first embodiment. That is, the first generation process in this embodiment is a process that generates a first initial detection value Sup corresponding to a first detection value Su using first detection signals S111 and S112. The first arithmetic circuit 141 generates the first initial detection value Sup by performing a calculation that includes finding the difference S111-S112 between the first detection signal S111 and the first detection signal S112. The first initial detection value Sup may be the difference S111-S112 itself, or it may be the difference S111-S112 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0168] The second arithmetic circuit 142 is configured to perform a second generation process. The content of the second generation process in this embodiment differs from that of the first embodiment. The second generation process in this embodiment is a process that generates a second initial detection value Svp corresponding to the second detection value Sv using the second detection signals S121 and S122. The second arithmetic circuit 142 generates the second initial detection value Svp by performing a calculation that includes finding the difference S121-S122 between the second detection signal S121 and the second detection signal S122. The second initial detection value Svp may be the difference S121-S122 itself, or it may be the difference S121-S122 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0169] The third arithmetic circuit 143 is configured to perform a third generation process. The third generation process is a process of generating a third detected value Sz using the third detection signals S131 and S132. The third arithmetic circuit 143 generates the third detected value Sz by performing a calculation that includes finding the difference S131-S132 between the third detection signal S131 and the third detection signal S132. The third detected value Sz may be the difference S131-S132 itself, or it may be the difference S131-S132 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0170] Furthermore, in this embodiment, the correction circuit 43 is configured not to generate a third detected value Sz. Also, in this embodiment, the content of the determination process differs from that of the first embodiment. The determination process in this embodiment includes the process of determining the first detected value Su and the second detected value Sv, but does not include the process of determining the third detected value Sz.

[0171] In this embodiment, the correction circuit 43 performs the first correction process and the second correction process alternately, and then performs the determination process. The correction circuit 43 may perform the first correction process and the second correction process once each, twice each, or three or more times each. The correction circuit 43 may also perform the update of the second initial detection value Svp first. That is, the correction circuit 43 may perform the first second correction process before performing the first first correction process.

[0172] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0173] It should be noted that the present invention is not limited to the embodiments described above, and various modifications are possible. For example, the magnetic sensor of the present invention may be an integrated unit of the first chip 2 and the second chip 3.

[0174] Alternatively, the second chip 3 may include only a second detection circuit configured to detect a component of the target magnetic field parallel to the V direction, instead of the second and third detection circuits 20 and 30. Or, the second chip 3 may include a second detection circuit configured to detect a component of the target magnetic field parallel to the V direction, and a third detection circuit configured to detect a component of the target magnetic field parallel to the Z direction, instead of the second and third detection circuits 20 and 30.

[0175] Furthermore, the second arithmetic circuit 42 in the first embodiment may be configured to execute a third process of the second generation process in addition to the first and second processes of the second generation process. In this case, the correction circuit 43 may execute the second correction process using the second and third initial detection values ​​Svp and Szp generated by the second arithmetic circuit 42 instead of the first and second values ​​S1 and S2. The second correction process may be a process that calculates (updates) the second initial detection value Svp by substituting the latest second initial detection value Svp and the latest first correction value Suc into a first equation expressed using the second initial detection value Svp and the first correction value Suc, and calculates (updates) the third initial detection value Szp by substituting the latest third initial detection value Szp and the latest first correction value Suc into a second equation expressed using the third initial detection value Szp and the first correction value Suc. The first expression may include an operation that multiplies the latest second initial detection value Svp by a first correction value Suc, and an operation that adds the value obtained by this operation to the latest second initial detection value Svp or subtracts it from the latest second initial detection value Svp. The second expression may include an operation that multiplies the latest third initial detection value Szp by a first correction value Suc, and an operation that adds the value obtained by this operation to the latest third initial detection value Szp or subtracts it from the latest third initial detection value Szp.

[0176] As described above, the magnetic sensor device of the present invention comprises a first detection circuit configured to detect a component of a target magnetic field in one direction and generate a first detection signal, a second detection circuit configured to detect a component of the target magnetic field in another direction and generate a second detection signal, and a processor.

[0177] The processor is configured to perform the following: a first generation process that generates a first initial detection value using a first detection signal; a second generation process that generates a second initial detection value using a second detection signal; a first correction process that updates the first initial detection value by correcting it using a second correction value generated from the latest second initial detection value; a second correction process that updates the second initial detection value by correcting it using a first correction value generated from the latest first initial detection value; and a determination process that determines the latest first initial detection value as a first detection value corresponding to the components of the target magnetic field parallel to the first reference direction, and determines the latest second initial detection value as a second detection value corresponding to the components of the target magnetic field parallel to the second reference direction. The processor performs the first correction process and the second correction process alternately, and then performs the determination process.

[0178] In the magnetic sensor device of the present invention, the processor may perform the first correction process and the second correction process twice each.

[0179] Furthermore, in the magnetic sensor device of the present invention, the processor may perform a first second correction process before performing the first first correction process.

[0180] Furthermore, in the magnetic sensor device of the present invention, the first correction value may be a value calculated by a calculation that includes multiplying the latest first initial detection value by a first correction coefficient. The second correction value may be a value calculated by a calculation that includes multiplying the latest second initial detection value by a second correction coefficient.

[0181] Furthermore, in the magnetic sensor device of the present invention, each of the first detection circuit and the second detection circuit may include a first magnetoresistive element and a second magnetoresistive element connected in series in a first path which is a path electrically connecting a first node and a second node, and a third magnetoresistive element and a fourth magnetoresistive element connected in series in a second path which is another path electrically connecting the first node and the second node. The first magnetoresistive element and the fourth magnetoresistive element may be connected to the first node. The second magnetoresistive element and the third magnetoresistive element may be connected to the second node. Each of the first to fourth magnetoresistive elements may include a magnetization-fixed layer having a first magnetization with a fixed direction, a free layer having a second magnetization whose direction can change according to the target magnetic field, and a gap layer disposed between the magnetization-fixed layer and the free layer. The direction of the first principal component of magnetization in the first magnetoresistive element and the direction of the first principal component of magnetization in the third magnetoresistive element may be the same. The direction of the first principal component of magnetization in the second magnetoresistive element and the direction of the first principal component of magnetization in the fourth magnetoresistive element may be the same. The direction of the first principal component of magnetization in the second magnetoresistive element may be opposite to the direction of the first principal component of magnetization in the first magnetoresistive element. The direction of the first principal component of magnetization in the fourth magnetoresistive element may be opposite to the direction of the first principal component of magnetization in the third magnetoresistive element. The direction of the second principal component of magnetization in each of the two magnetoresistive elements among the first to fourth magnetoresistive elements may be opposite to the direction of the second principal component of magnetization in each of the other two magnetoresistive elements among the first to fourth magnetoresistive elements, when no target magnetic field is applied to the first and second detection circuits. The gap layer may be a tunnel barrier layer.

[0182] Furthermore, in the magnetic sensor device of the present invention, shielding is not required for each of the first detection circuit and the second detection circuit.

[0183] Furthermore, in the magnetic sensor device of the present invention, the first reference direction and the second reference direction may both be parallel to the reference plane and orthogonal to each other.

[0184] Furthermore, in the magnetic sensor device of the present invention, the direction of the component of the target magnetic field detected by the first detection circuit may be parallel to the reference plane. The direction of the component of the target magnetic field detected by the second detection circuit may be inclined with respect to the reference plane.

[0185] Furthermore, the magnetic sensor device of the present invention may further include a third detection circuit, wherein the third detection circuit is configured to generate a third detection signal by detecting a component of the target magnetic field that is tilted with respect to the reference plane and in a direction different from the direction of the component of the target magnetic field detected by the second detection circuit. The second generation process may be a process that generates a second initial detection value and a third initial detection value using the second detection signal and the third detection signal. The second correction process may be a process that corrects the second initial detection value and the third initial detection value using the first correction value and updates the second initial detection value and the third initial detection value. The determination process may further determine the latest third initial detection value as a third detection value that has a correspondence with the component of the target magnetic field perpendicular to the reference plane.

[0186] If the magnetic sensor device of the present invention includes a third detection circuit, the second generation process may include a first process for generating a first value using a second detection signal, a second process for generating a second value using a third detection signal, and a third process for generating a second initial detection value and a third initial detection value using the first value and the second value. The second correction process may substantially include a third process. In this case, the processor may execute the first and second processes, followed by the first second correction process and the first first correction process in that order. Furthermore, the second correction process may include a fourth process for correcting the first value and the second value using a first correction value, a fifth process for generating a second initial detection value and a third initial detection value using the first value and the second value corrected by the fourth process, and a sixth process for updating the second initial detection value and the third initial detection value using the second initial detection value and the third initial detection value generated by the fifth process.

[0187] If the magnetic sensor device of the present invention includes a third detection circuit, each of the first to third detection circuits may include a first magnetoresistive element and a second magnetoresistive element connected in series in a first path which is a path electrically connecting a first node and a second node, and a third magnetoresistive element and a fourth magnetoresistive element connected in series in a second path which is another path electrically connecting the first node and the second node. The first magnetoresistive element and the fourth magnetoresistive element may be connected to the first node. The second magnetoresistive element and the third magnetoresistive element may be connected to the second node. Each of the first to fourth magnetoresistive elements may include a magnetization-fixed layer having a first magnetization with a fixed direction, a free layer having a second magnetization whose direction can change according to the target magnetic field, and a gap layer disposed between the magnetization-fixed layer and the free layer. The direction of the first principal component of magnetization in the first magnetoresistive element and the direction of the first principal component of magnetization in the third magnetoresistive element may be the same. The direction of the first principal component of magnetization in the second magnetoresistive element and the direction of the first principal component of magnetization in the fourth magnetoresistive element may be the same. The direction of the first principal component of magnetization in the second magnetoresistive element may be opposite to the direction of the first principal component of magnetization in the first magnetoresistive element. The direction of the first principal component of magnetization in the fourth magnetoresistive element may be opposite to the direction of the first principal component of magnetization in the third magnetoresistive element. The direction of the second principal component of magnetization in each of the two magnetoresistive elements among the first to fourth magnetoresistive elements may be opposite to the direction of the second principal component of magnetization in each of the other two magnetoresistive elements among the first to fourth magnetoresistive elements, when no target magnetic field is applied to the first to third detection circuits. The gap layer may be a tunnel barrier layer.

[0188] Furthermore, if the magnetic sensor device of the present invention includes a third detection circuit, each of the first to third detection circuits does not necessarily need to be provided with a shield.

[0189] Furthermore, if the magnetic sensor device of the present invention includes a third detection circuit, the magnetic sensor device of the present invention may further include a first chip including a first detection circuit and a second chip including a second detection circuit and a third detection circuit.

[0190] Furthermore, the magnetic sensor device of the present invention may further include a third detection circuit, the third detection circuit being configured to detect a component of the target magnetic field perpendicular to the reference plane and generate a third detection signal. The direction of the component of the target magnetic field detected by the first detection circuit may be a first direction parallel to the reference plane. The direction of the component of the target magnetic field detected by the second detection circuit may be a second direction parallel to the reference plane. The second generation process may be a process that generates a second initial detection value and a third detection value using the second detection signal and the third detection signal. The third detection value may have a correspondence with the component of the target magnetic field perpendicular to the reference plane. [Explanation of Symbols]

[0191] 1…Magnetic sensor, 2…First chip, 3…Second chip, 4…Support, 6,7…Adhesive, 10…First detection circuit, 20…Second detection circuit, 30…Third detection circuit, 40…Processor, 50…MR element, 50A…First MR element, 50B…Second MR element, 50C…Third MR element, 51…Antiferromagnetic layer, 52…Magnetization fixed layer, 53…Gap layer, 54…Free layer, 61,61A,61B,61C…Lower electrode, 62,62A,62B,62C…Upper electrode, 70…First coil, 71…Lower coil element, 72…Upper coil element, 80…Second coil, 81…Lower coil element 82... Upper coil element, 100... Magnetic sensor device, 201, 301... Substrate, 201a, 301a... Top surface, 202~204, 207~210, 302~305, 307~310... Insulating layer, 305a... First inclined surface, 305b... Second inclined surface, 305c... Convex surface, S11, S12... First detection signal, S21, S22... Second detection signal, S31, S32... Third detection signal, Su... First detection value, Suc... First correction value, Sup... First initial detection value, Sv... Second detection value, Svc... Second correction value, Svp... Second initial detection value, Sz... Third detection value, Szp... Third initial detection value.

Claims

1. A first detection circuit is configured to detect a unidirectional component of the target magnetic field, which is the magnetic field to be detected, and generate a first detection signal. A second detection circuit is configured to detect a component of the target magnetic field in another direction and generate a second detection signal. A third detection circuit, Equipped with a processor, The aforementioned processor, A first generation process that generates a first initial detection value using the first detection signal, A second generation process that generates a second initial detection value using the second detection signal, A first correction process updates the first initial detection value by correcting it using a second correction value generated from the latest second initial detection value, A second correction process updates the second initial detection value by correcting it using a first correction value generated from the latest first initial detection value, A determination process that determines the latest first initial detection value as a first detection value having a corresponding relationship with the component of the target magnetic field parallel to the first reference direction, and determines the latest second initial detection value as a second detection value having a corresponding relationship with the component of the target magnetic field parallel to the second reference direction, It is configured to perform, The processor performs the first correction process and the second correction process alternately, and then performs the determination process. The direction of the component of the target magnetic field detected by the first detection circuit is parallel to the reference plane. The direction of the component of the target magnetic field detected by the second detection circuit is inclined with respect to the reference plane. The third detection circuit is configured to generate a third detection signal by detecting a component of the target magnetic field that is tilted with respect to the reference plane and in a direction different from the direction of the component of the target magnetic field detected by the second detection circuit, The second generation process is a process that generates the second initial detection value and the third initial detection value using the second detection signal and the third detection signal. The second correction process is a process that corrects the second initial detection value and the third initial detection value using the first correction value and updates the second initial detection value and the third initial detection value. The magnetic sensor device is characterized in that the determination process further determines the latest third initial detection value as a third detection value having a correspondence with the component of the target magnetic field perpendicular to the reference plane.

2. The magnetic sensor device according to claim 1, characterized in that the processor performs the first correction process and the second correction process twice each.

3. The magnetic sensor device according to claim 1, characterized in that the processor performs the first second correction process before performing the first first correction process.

4. The first correction value is a value calculated by a calculation that includes multiplying the latest first initial detection value by a first correction coefficient. The magnetic sensor device according to any one of claims 1 to 3, characterized in that the second correction value is a value calculated by a calculation that includes multiplying the latest second initial detection value by a second correction coefficient.

5. Each of the first detection circuit and the second detection circuit is, A first magnetoresistive element and a second magnetoresistive element are connected in series in a first path, which is a path electrically connecting a first node and a second node. The system includes a third magnetoresistive element and a fourth magnetoresistive element connected in series in a second path, which is another path electrically connecting the first node and the second node. The first magnetoresistive element and the fourth magnetoresistive element are connected to the first node. The second magnetoresistive element and the third magnetoresistive element are connected to the second node. Each of the first to fourth magnetoresistive elements includes a magnetization-fixed layer having a first magnetization with a fixed direction, a free layer having a second magnetization whose direction can change according to the target magnetic field, and a gap layer disposed between the magnetization-fixed layer and the free layer. The direction of the first principal component of magnetization in the first magnetoresistive element and the direction of the first principal component of magnetization in the third magnetoresistive element are the same. The direction of the first principal component of magnetization in the second magnetoresistive element and the direction of the first principal component of magnetization in the fourth magnetoresistive element are the same. The direction of the first main component of magnetization in the second magnetoresistive element is opposite to the direction of the first main component of magnetization in the first magnetoresistive element. The direction of the first main component of magnetization in the fourth magnetoresistive element is opposite to the direction of the first main component of magnetization in the third magnetoresistive element. The magnetic sensor device according to claim 1, characterized in that the direction of the second principal component of magnetization in each of the two magnetoresistive elements among the first to fourth magnetoresistive elements is opposite to the direction of the second principal component of magnetization in each of the other two magnetoresistive elements among the first to fourth magnetoresistive elements when the target magnetic field is not applied to the first and second detection circuits.

6. The magnetic sensor device according to claim 5, characterized in that the gap layer is a tunnel barrier layer.

7. The magnetic sensor device according to claim 1, characterized in that neither the first detection circuit nor the second detection circuit is provided with a shield.

8. The magnetic sensor device according to claim 1, characterized in that both the first reference direction and the second reference direction are parallel to the reference plane and orthogonal to each other.

9. The second generation process includes a first process for generating a first value using the second detection signal, a second process for generating a second value using the third detection signal, and a third process for generating a second initial detection value and a third initial detection value using the first value and the second value. The second correction process substantially includes the third process, The magnetic sensor device according to claim 1, characterized in that the processor executes the first processing and the second processing, and then executes the first second correction processing and the first first correction processing in this order.

10. The second generation process includes a first process for generating a first value using the second detection signal, a second process for generating a second value using the third detection signal, and a third process for generating a second initial detection value and a third initial detection value using the first value and the second value. The magnetic sensor device according to claim 1, characterized in that the second correction process includes a fourth process of correcting the first value and the second value using the first correction value to update the first value and the second value; a fifth process of generating the second initial detection value and the third initial detection value using the latest first value and the latest second value; and a sixth process of updating the second initial detection value and the third initial detection value using the second initial detection value and the third initial detection value generated by the fifth process.

11. Each of the first to third detection circuits is: A first magnetoresistive element and a second magnetoresistive element are connected in series in a first path, which is a path electrically connecting a first node and a second node. The system includes a third magnetoresistive element and a fourth magnetoresistive element connected in series in a second path, which is another path electrically connecting the first node and the second node. The first magnetoresistive element and the fourth magnetoresistive element are connected to the first node. The second magnetoresistive element and the third magnetoresistive element are connected to the second node. Each of the first to fourth magnetoresistive elements includes a magnetization-fixed layer having a first magnetization with a fixed direction, a free layer having a second magnetization whose direction can change according to the target magnetic field, and a gap layer disposed between the magnetization-fixed layer and the free layer. The direction of the first principal component of magnetization in the first magnetoresistive element and the direction of the first principal component of magnetization in the third magnetoresistive element are the same. The direction of the first principal component of magnetization in the second magnetoresistive element and the direction of the first principal component of magnetization in the fourth magnetoresistive element are the same. The direction of the first main component of magnetization in the second magnetoresistive element is opposite to the direction of the first main component of magnetization in the first magnetoresistive element. The direction of the first main component of magnetization in the fourth magnetoresistive element is opposite to the direction of the first main component of magnetization in the third magnetoresistive element. The magnetic sensor device according to any one of claims 1, 9, or 10, characterized in that the direction of the second principal component of magnetization in each of the two magnetoresistive elements among the first to fourth magnetoresistive elements is opposite to the direction of the second principal component of magnetization in each of the other two magnetoresistive elements among the first to fourth magnetoresistive elements when the target magnetic field is not applied to the first to third detection circuit.

12. The magnetic sensor device according to claim 11, characterized in that the gap layer is a tunnel barrier layer.

13. The magnetic sensor device according to any one of claims 1, 9, or 10, characterized in that each of the first to third detection circuits is not provided with a shield.

14. Furthermore, the magnetic sensor device according to any one of claims 1, 9, or 10 is characterized by comprising a first chip including the first detection circuit and a second chip including the second detection circuit and the third detection circuit.

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