Method for manufacturing semiconductor composite devices

Abstract

To easily eliminate defects while increasing packaging density.SOLUTION: A composite integrated film 1 comprises a film rear face 1B including a substrate rear face 2 and an electrode rear face 20B, formed in an extremely flat shape. A circuit board 70 comprises a substrate surface 70A including an insulation surface 73A and a pad surface 80A, formed in an extremely flat shape. An LED display indication part 61 allows, in a state where the electrode rear face 20B of the composite integrated film 1 and the pad surface 80A of the circuit board 70 are bonded to each other by intermolecular force thereby physically and electrically connected, the characteristics of the composite integrated film 1 to be inspected while being operated and the composite integrated film 1 to be easily peeled off and replaced at an abnormal site. This enables the LED display indication part 61 to increase the packaging density while significantly improving the production yield.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present invention relates to the manufacture of semiconductor composite devices method and is suitable for application to a display device of a micro-LED type in which a plurality of small LEDs (Light Emitting Diodes) are arranged, for example.

Background Art

[0002] In recent years, as display devices, those using liquid crystal panels have been widely popularized, and those using new types of displays such as organic EL (electro-luminescence) type and micro-LED type have been developed for the purpose of improving image quality and the like.

[0003] Among these, in a micro-LED type display (hereinafter also referred to as a micro-LED display), for example, one pixel (also called a pixel or a dot) is constituted by three-color LED elements of red (Red), green (Green), and blue (Blue), and a large number of LED elements are arranged in a lattice pattern on a circuit board. This micro-LED display can display a high-quality image by finely controlling the light emission intensity of each LED element individually.

[0004] Generally, when mounting an electronic component such as a minute LED element on a circuit board, flip-chip mounting is performed. In this flip-chip mounting, the electrodes of the electronic component and the electrodes on the circuit board are eutectically bonded to form an alloy, whereby they are physically fixed and electrically connected.

[0005] By the way, regarding the micro-LED display, reduction of the defect rate in the manufacturing process, so-called improvement of the yield, is a major issue.One problem is that in flip-chip mounting, when an electronic component mounted on a substrate is determined to be defective, removing the electronic component from the circuit board will cause significant damage to the electrodes, making it difficult to stably mount a new electronic component in the same location.

[0006] Therefore, various methods have been proposed, mainly for microLED displays, that lead to improved yield by eliminating defects. For example, Patent Document 1 proposes a method in which redundant LED elements are pre-mounted on a circuit board and wiring is performed selectively according to the inspection results. Patent Document 2 proposes a method in which redundant space for mounting LED elements is provided within pixels on a circuit board, and new LED elements are mounted near the locations determined to be defective. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] U.S. Patent Application Publication No. 2018 / 0174932 [Patent Document 2] U.S. Patent Application Publication No. 2017 / 0186740 [Overview of the project] [Problems that the invention aims to solve]

[0008] However, while the above-mentioned method improves yield, it requires space on the circuit board to mount redundant LED elements. This makes it difficult to improve the integration density of display pixels (so-called pixels), i.e., the mounting density or pixel density, thus hindering the creation of high-resolution displays.

[0009] This invention was made in consideration of the above points, and is a method for manufacturing semiconductor composite devices that can easily eliminate defects and increase mounting density. method This is a proposal to be made. [Means for solving the problem]

[0010] In order to solve these problems, the method for manufacturing a semiconductor composite device of the present invention is as follows: A preparation step of preparing a composite integrated film having a substrate thin film that adheres to a flat forming substrate and a planar electrode surface that adheres to the forming substrate,The method comprises a pickup step of picking up a composite integrated film from a substrate and a first bonding step of bonding the composite integrated film to the substrate surface of a circuit board. The composite integrated film is provided on the substrate in advance and comprises a substrate thin film, one or more through-holes that penetrate the first and second substrate surfaces facing each other in the substrate thin film, one or more electrodes having a planar electrode surface on the second substrate surface side, and elements provided on the first substrate surface. In the first bonding step, the second substrate surface of the composite integrated film is bonded to the substrate surface.

[0012] The present invention Manufactured to adhere closely to a flat substrate The electrode surface of the composite integrated film and the second surface of the substrate flat To form a coplanar surface, when the connecting pad is attached to a circuit board formed in a planar shape, the electrode surface of the composite integrated film and the surrounding second surface of the substrate are bonded to the connecting pad by intermolecular forces, and the second surface of the substrate and the surface of the circuit board are also bonded by intermolecular forces. ru. [Effects of the Invention]

[0013] According to the present invention, it is possible to manufacture a semiconductor composite device that can easily eliminate defects and increase mounting density. method This can be achieved. [Brief explanation of the drawing]

[0014] [Figure 1] This is a schematic diagram showing the structure of a composite integrated film. [Figure 2] This is a flowchart showing the manufacturing procedure for composite laminated films. [Figure 3] This is a schematic diagram illustrating the manufacturing process of composite integrated films. [Figure 4] This is a schematic diagram showing the arrangement of composite integrated films on a wafer. [Figure 5] This is a schematic diagram showing the arrangement of composite integrated films on a wafer. [Figure 6] This is a schematic perspective view showing the configuration of an LED display device. [Figure 7]It is a schematic perspective view showing the attachment of a composite integrated film to a circuit board. [Figure 8] It is a schematic diagram showing the attachment of a composite integrated film to a circuit board. [Figure 9] It is a schematic diagram showing the manufacture of a circuit board. [Figure 10] It is a flowchart showing the manufacturing procedure of an LED display device. [Figure 11] It is a schematic diagram showing the manufacture of an LED display device. [Figure 12] It is a schematic diagram showing the configuration of a composite integrated film according to another embodiment. [Figure 13] It is a schematic diagram showing the configuration of a composite integrated film according to another embodiment. [Figure 14] It is a schematic diagram showing the configuration of a composite integrated film according to another embodiment. [Figure 15] It is a schematic perspective view showing the attachment of a composite integrated film to a circuit board according to another embodiment. [Figure 16] It is a schematic diagram showing the attachment of a composite integrated film to a circuit board according to another embodiment.

Embodiments for Carrying Out the Invention

[0015] Hereinafter, embodiments for carrying out the invention (hereinafter referred to as embodiments) will be described with reference to the drawings.

[0016] [1. Configuration of Composite Integrated Film] As shown in the plan view in FIG. 1(A) and the cross-sectional view taken along the line A1 - A2 in FIG. 1(B), the composite integrated film according to the present embodiment has a configuration in which a plurality of components are installed on one side of a base film 2. For convenience of explanation, hereinafter, in FIG. 1(A), the direction from left to right is taken as the X direction, the direction from top to bottom is taken as the Y direction, and the direction from the back to the front of the paper surface is taken as the Z direction.

[0017] The substrate thin film 2 is made of, for example, a polyimide resin and has insulating properties. The substrate thin film 2 is formed as a flat rectangular parallelepiped or a thin plate, and the length of the side along the Z direction is significantly shorter than the sides along the X direction and the Y direction, for example, 20 [μm] or less. Hereinafter, the side of the substrate thin film 2 on the Z direction side will be called the substrate surface 2A or the first substrate surface, and the opposite side will be called the substrate back surface 2B or the second substrate surface. This substrate back surface 2B is formed to be extremely flat, and its surface roughness is 10 [nm] or less.

[0018] Furthermore, in the substrate thin film 2, three substrate through-holes 2V1, 2V2, and 2V3 are formed at locations separated from each other along the X direction, in the area closer to the Y direction overall (towards the bottom in Figure 1(A)). In addition, one substrate through-hole 2V4 is formed in the area closer to the -Y direction overall (towards the top in Figure 1(A)). For the sake of explanation, in the following, substrate through-holes 2V1, 2V2, 2V3, and 2V4 will be collectively referred to as substrate through-hole 2V.

[0019] The substrate through-holes 2V, which serve as penetrating sections, are holes that penetrate the substrate thin film 2 in the Z direction, and correspond to vias when the substrate thin film 2 is considered as a circuit board. Of these, substrate through-holes 2V1, 2V2, and 2V3 all have a shape that is close to a square when viewed from the Z direction, i.e., the shape in Figure 1(A). On the other hand, substrate through-hole 2V4 has a rectangular shape that is elongated in the X direction when viewed from the Z direction. Incidentally, the shape of substrate through-hole 2V4 is almost the same as when substrate through-holes 2V1, 2V2, and 2V3 are connected along the X direction.

[0020] The substrate surface 2A of the substrate thin film 2 is provided with a red light-emitting element 11, a green light-emitting element 12, and a blue light-emitting element 13, connecting electrodes 21, 22, 23, and 24, interlayer insulating films 31 and 32, anode wiring materials 41, 42, and 43, and cathode wiring materials 44, 45, and 46.

[0021] The red light-emitting element 11, the green light-emitting element 12, and the blue light-emitting element 13 (hereinafter collectively referred to as the light-emitting element group 10, or simply as elements) are arranged on the substrate surface 2A of the substrate thin film 2 near the center in the Y direction, with predetermined spacings between them along the X direction. The red light-emitting element 11, the green light-emitting element 12, and the blue light-emitting element 13 are all rectangular parallelepipeds that are slightly longer in the Y direction and slightly shorter in the X and Z directions, with approximately 2 / 5 to 1 / 3 of the area on the -Y direction side missing from approximately 3 / 5 to 2 / 3 of the area on the Z direction side.

[0022] The red light-emitting element 11 is made of, for example, a gallium arsenide (GaAs)-based material and is a component of a red light-emitting diode. The green light-emitting element 12 is made of, for example, a gallium nitride (GaN)-based material and is a component of a green light-emitting diode. The blue light-emitting element 13 is made of, for example, a gallium nitride (GaN)-based material and is a component of a blue light-emitting diode. In other words, each light-emitting element constituting the light-emitting element group 10 is made of two or more different materials.

[0023] In the red light-emitting element 11, the portion of the surface on the Z-direction side that occupies the central area or the Y-direction side is the anode terminal surface 11A, and the portion that occupies the -Y-direction side is the cathode terminal surface 11K. Similarly, in the green light-emitting element 12 and the blue light-emitting element 13, anode terminal surfaces 12A and 13A and cathode terminal surfaces 12K and 13K are provided on the surface on the Z-direction side, respectively.

[0024] The connecting electrode 21 is made of a conductive metallic material such as Au, Al, Cu, Ti, and Pt, and fills the inside of the substrate through-hole 2V1. It is also provided so as to overlap the substrate surface 2A side near its outer circumference, in other words, to block the substrate through-hole 2V1 and its surroundings from the Z direction side (i.e., the substrate surface 2A side). The back surface 21B of the electrode, which is the -Z direction surface, is formed to be extremely flat, similar to the back surface 2B of the substrate, and its surface roughness is 10 nm or less.

[0025] The connecting electrodes 22 and 23 have a similar configuration to the connecting electrode 21, filling the inside of the substrate through-holes 2V2 and 2V3 and being formed so as to ride up towards the substrate surface 2A near their outer circumference. Furthermore, the electrode back surfaces 22B and 23B, which are the surfaces on the -Z direction side of the connecting electrodes 22 and 23, are formed to be extremely flat, similar to the electrode back surface 21B.

[0026] The connecting electrode 24 is configured as if the connecting electrode 21 has been extended in the X direction, and is formed to fill the inside of the substrate through-hole 2V4 and to ride up towards the substrate surface 2A near its outer circumference. Furthermore, the back surface 24B of the connecting electrode 24, which is the surface in the -Z direction, is formed to be extremely flat, similar to the back surface 21B of the electrode.

[0027] For the sake of explanation, in the following, connecting electrodes 21, 22, 23, and 24 will be collectively referred to as connecting electrode 20, or simply as electrodes. Furthermore, in the following, the electrode back surfaces 21B, 22B, 23B, and 24B will be collectively referred to as electrode back surface 20B, or simply as electrode surfaces.

[0028] Furthermore, in the composite integrated film 1, the substrate back surface 2B of the substrate thin film 2 and the electrode back surface 20B form substantially the same plane. Hereafter, this plane will also be referred to as the film back surface 1B. Specifically, in the composite integrated film 1, for example with respect to the connecting electrode 24, as shown in Figure 1(C), which is an enlarged view of part B1, a part of Figure 1(B), the distance between the substrate back surface 2B and the electrode back surface 24B in the Z direction (i.e., the normal direction of the substrate back surface 2B), i.e., the film step difference LD, which is the "height of the step difference," is extremely small. Specifically, in the composite integrated film 1, this film step difference LD is 1 / 1000 or less compared to the shorter of the shortest side on the XY plane in the outer shape of the substrate back surface 2B, i.e., the distance L2X, which is the length of the side along the X direction, and the distance L2Y, which is the length of the side along the Y direction.

[0029] The interlayer insulating films 31 and 32 are both made of insulating material. The interlayer insulating film 31 is provided in the red light-emitting element 11, the green light-emitting element 12, and the blue light-emitting element 13, extending from the surface on the Y-direction side to a portion of the surface on the Z-direction side that is on the Y-direction side. The interlayer insulating film 32 is provided in the red light-emitting element 11, the green light-emitting element 12, and the blue light-emitting element 13, extending from the surface on the -Y-direction side to a portion of the surface on the Z-direction side that is on the -Y-direction side.

[0030] The anode wiring material 41 is made of a conductive metallic material such as Au, Al, Cu, Ti, and Pt. This anode wiring material 41 is formed to continuously cover the surfaces of the red light-emitting element 11, the substrate thin film 2, and the connecting electrode 21, generally along the Y direction, from a portion of the Z-side surface of the red light-emitting element 11 on the Y-side to a portion of the Z-side surface of the connecting electrode 21 closer to the -Y direction. In other words, the anode wiring material 41 electrically connects the anode terminal surface 11A of the red light-emitting element 11 and the electrode back surface 21B of the connecting electrode 21.

[0031] The cathode wiring material 44, like the anode wiring material 41, is made of a conductive metallic material. This cathode wiring material 44 is formed to continuously cover the surfaces of the red light-emitting element 11, the substrate thin film 2, and the connecting electrode 24, generally along the Y direction, from a portion of the Z-side surface of the red light-emitting element 11 on the -Y side to a portion of the Z-side surface of the connecting electrode 24 that is closer to the -X direction and closer to the Y direction. In other words, the cathode wiring material 44 electrically connects the cathode terminal surface 11K of the red light-emitting element 11 and the back surface 24B of the connecting electrode 24.

[0032] The anode wiring material 42 and the cathode wiring material 45 have configurations similar to the anode wiring material 41 and the cathode wiring material 44, respectively, and are connected to the green light-emitting element 12. Specifically, the anode wiring material 42 electrically connects the anode terminal surface 12A of the green light-emitting element 12 to the back surface 22B of the connecting electrode 22. The cathode wiring material 45 electrically connects the cathode terminal surface 12K of the green light-emitting element 12 to the back surface 24B of the connecting electrode 24.

[0033] The anode wiring material 43 and the cathode wiring material 46 have configurations similar to the anode wiring material 41 and the cathode wiring material 44, respectively, and are connected to the blue light-emitting element 13. Specifically, the anode wiring material 43 electrically connects the anode terminal surface 13A of the blue light-emitting element 13 to the back surface 23B of the connecting electrode 23. The cathode wiring material 46 electrically connects the cathode terminal surface 13K of the blue light-emitting element 13 to the back surface 24B of the connecting electrode 24.

[0034] For the sake of explanation, the anode wiring materials 41, 42, and 43, as well as the cathode wiring materials 44, 45, and 46, will collectively be referred to as the wiring material group 40 below.

[0035] Thus, in the composite integrated film 1, three groups of light-emitting elements 10 for each color are provided on the substrate surface 2A side of the substrate thin film 2, and the back surface 20B of the connecting electrode 20 electrically connected to each of them is exposed on the substrate back surface 2B side of the substrate thin film 2, and forms a plane substantially identical to the substrate back surface 2B.

[0036] [2. Manufacturing of composite laminated films] Next, the manufacturing of the composite integrated film 1 will be described. As shown in the flowchart in Figure 2 and the schematic cross-sectional view in Figure 3, the composite integrated film 1 is constructed stepwise on a formation substrate 51 using a predetermined manufacturing apparatus 50, following various manufacturing processes similar to those used in the manufacturing of general semiconductors. Incidentally, the formation substrate 51 is made of silicon, similar to a so-called wafer, and an extremely flat formation surface 52 is formed on its surface. The surface roughness of this formation surface 52 is 10 nm or less.

[0037] Specifically, when the manufacturing apparatus 50 starts the composite integrated film manufacturing procedure RT1 (Figure 2), it moves to the first step SP1, and as shown in Figure 3(B), it forms a thin film layer 53 of polyimide resin on the formation surface 52 of the formation substrate 51, and then moves to the next step SP2. Specifically, the manufacturing apparatus 50 forms a thin film layer 53 with a thickness of, for example, 20 [μm] or less by using, for example, a spin coater (not shown). At this time, the lower surface of the thin film layer 53 is formed in close contact with the formation surface 52, so it becomes extremely flat.

[0038] In step SP2, as shown in Figure 3(C), the manufacturing apparatus 50 performs a patterning process using a method such as lithography to remove unnecessary parts from the thin film layer 53, thereby forming the substrate thin film 2, and then proceeds to the next step SP3. At this time, substrate through-holes 2V (substrate through-holes 2V1 and 2V4, etc.) are also formed in the substrate thin film 2.

[0039] In step SP3, as shown in Figure 3(D), the manufacturing apparatus 50 deposits a metallic material in an area that covers each of the substrate through-holes 2V by methods such as lithography and vapor deposition to form the connecting electrodes 20 (connecting electrodes 21 and 24, etc.), and then proceeds to the next step SP4. At this time, the lower surface of the connecting electrodes 20 is formed in close contact with the formation surface 52, similar to the case of the thin film layer 53. As a result, the electrode back surface 20B (electrode back surfaces 21B and 24B, etc.), which is the lower surface of the connecting electrodes 20, becomes extremely flat and is located on substantially the same plane as the lower surface of the thin film layer 53, i.e., the substrate back surface 2B of the substrate thin film 2.

[0040] In step SP4, as shown in Figure 3(E), the manufacturing apparatus 50 transfers the light-emitting element group 10 (red light-emitting element 11, etc.) manufactured by a predetermined LED manufacturing apparatus (not shown) to a predetermined location on the substrate surface 2A of the substrate thin film 2, and then proceeds to the next step SP5. At this time, the manufacturing apparatus 50 can utilize well-known transfer techniques, such as those disclosed in Patent Document 1.

[0041] In step SP5, as shown in Figure 3(F), the manufacturing apparatus 50 forms interlayer insulating films 31 and 32 using a predetermined insulating material by methods such as photolithography and vapor deposition, and then forms a group of wiring materials 40 (anode wiring material 41, cathode wiring material 44, etc.) using a predetermined metal material. After that, the manufacturing apparatus 50 moves to the next step SP6 to complete the composite integrated film manufacturing procedure RT1. The composite integrated film 1 manufactured in this way has its substrate back surface 2B and electrode back surface 20B in contact with the surface of the forming substrate 51 (i.e., the forming surface 52).

[0042] Incidentally, the manufacturing apparatus 50 is designed to manufacture multiple composite integrated films 1 together from a single formation substrate 51 (corresponding to a so-called silicon wafer), similar to how general semiconductor devices are manufactured. Specifically, as shown in the schematic plan view in Figure 4 and the schematic cross-sectional view in Figure 5, the manufacturing apparatus 50 manufactures multiple composite integrated films 1 on the formation substrate 51 by performing each process for manufacturing multiple composite integrated films 1 simultaneously or sequentially, thereby arranging the multiple composite integrated films 1 in a grid-like configuration.

[0043] [3. Configuration of LED display device] Next, we will describe the LED display device 60, which incorporates multiple composite integrated films 1. As shown in the schematic perspective view in Figure 6, the LED display device 60 as a semiconductor composite device includes an LED display unit 61, a frame 62, a heat dissipation member 63, a connecting cable 64, a connecting terminal unit 65, and a display driver 66, etc. Incidentally, the LED display device 60 is also called a microLED display, and is a display device in which a set of red, green, and blue LED elements are associated with one pixel.

[0044] The LED display unit 61 is configured such that a large number of composite integrated films 1 (Figure 1) are arranged in a grid pattern within a display area set on the Z-direction surface of a flat circuit board (details will be described later). The frame 62 is formed in a rectangular frame shape from, for example, a predetermined steel material, and is attached to the outside of the display area on the Z-direction side of the LED display unit 61.

[0045] The heat dissipation member 63 is made of a metal material with relatively high thermal conductivity, such as aluminum, and is constructed in a flat rectangular parallelepiped shape overall. This heat dissipation member 63 is installed so as to be in contact with the LED display unit 61 on the -Z direction side of the LED display unit 61, that is, on the side opposite to the surface on which images are displayed. The connecting cable 64 is electrically connected to a predetermined control device (not shown) via the connecting terminal 65, and transmits the image signal supplied from the control device to the display driver 66.

[0046] The display driver 66, acting as a drive circuit, is electrically connected to the connection cable 64 and the LED display unit 61, respectively. This display driver 66 generates red, green, and blue drive signals based on the image signal supplied, for example, via the connection cable 64, and supplies drive currents based on these drive signals to the LED display unit 61. As a result, the LED display device 60 can display an image based on the image signal supplied from a control device (not shown) or the like in the display area of ​​the LED display unit 61.

[0047] Next, the configuration of the LED display unit 61 will be described. As shown in Figure 7, which is a partial perspective view, and in Figure 8, which is a schematic cross-sectional view, the LED display unit 61 has a configuration in which a composite integrated film 1 is attached to the Z-direction surface of the circuit board 70. Incidentally, Figure 7 shows an extracted portion of the LED display unit 61, consisting of one composite integrated film 1 and the corresponding part of the circuit board 70. Also, Figure 7 shows the state before the composite integrated film 1 is attached to the circuit board 70. On the other hand, Figure 8 is a schematic cross-sectional view corresponding to Figure 1(B).

[0048] The circuit board 70 has a structure in which the surface of the base material 71 on the -Z direction side and the opposite surface are covered by insulating layers 72 and 73, respectively. The base material 71 is made of, for example, a so-called glass epoxy resin, that is, glass fibers impregnated with epoxy resin and heat-cured, and has sufficient strength and insulation properties. The insulating layers 72 and 73 are made of, for example, a thermosetting epoxy resin and have sufficient insulation properties.

[0049] Furthermore, the circuit board 70 is provided with multiple wiring materials, including vertical wiring materials 74 arranged mainly along the Y direction on the front and back surfaces of the base material 71, horizontal common wiring materials 75 arranged mainly along the X direction, and internal wiring materials 76 arranged to penetrate the interior of the base material 71. Of these, the vertical wiring materials 74 and the horizontal common wiring materials 75 generally form a grid-like wiring pattern. These wiring materials are made of conductive materials and are electrically connected to each other as appropriate. For the sake of explanation, the vertical wiring materials 74 and the horizontal common wiring materials 75 will also be referred to as first-direction wiring and second-direction wiring, respectively.

[0050] Furthermore, the circuit board 70 is provided with three vertical wiring connection pads 81, 82, and 83 and one horizontal common wiring connection pad 84 in an area corresponding to one composite integrated film 1 (hereinafter referred to as the adhesive area 77). The vertical wiring connection pads 81, 82, and 83 are made of a conductive material, and their pad surfaces 81A, 82A, and 83A are exposed on the Z-direction side of the circuit board 70 (hereinafter referred to as the substrate surface 70A), and are electrically connected to the vertical wiring material 74 inside the circuit board 70. The horizontal common wiring connection pad 84 is made of a conductive material, and its pad surface 84A is exposed on the substrate surface 70A of the circuit board 70, and is electrically connected to the horizontal common wiring material 75 inside the circuit board 70.

[0051] For the sake of explanation, the vertical wiring connection pads 81, 82, and 83 and the horizontal common wiring connection pad 84 will be collectively referred to as connection pad 80 below, and the pad surfaces 81A, 82A, 83A, and 84A will be collectively referred to as pad surface 80A.

[0052] Incidentally, on the circuit board 70, the positions of the pad surfaces 81A, 82A, 83A, and 84A in the adhesive area 77 are mirror images of the positions of the electrode back surfaces 21B, 22B, 23B, and 24B on the back surface 1B of the composite integrated film 1. Also, on the circuit board 70, the size of the pad surfaces 81A, 82A, 83A, and 84A in the adhesive area 77 is equivalent to or slightly larger than the size of the electrode back surfaces 21B, 22B, 23B, and 24B on the back surface 1B of the composite integrated film 1.

[0053] Furthermore, in the circuit board 70, the substrate surface 70A is formed in an extremely flat planar shape. That is, in the circuit board 70, both the insulating surface 73A, which is the Z-direction side surface of the insulating layer 73, and the pad surface 80A are extremely flat, and both are parallel to each other as planes, and furthermore, the distance between them in the Z direction (i.e., the step difference) is also extremely small.

[0054] [4. Manufacturing of circuit boards and LED display units] Next, the manufacturing of the circuit board 70 and the LED display unit 61 will be described separately. First, the circuit board 70 is manufactured through multiple processes using a circuit board manufacturing apparatus 90, as shown in the stepwise schematic diagrams in Figure 9. This circuit board manufacturing apparatus 90 is designed to use well-known semiconductor manufacturing technologies, such as photolithography, vapor deposition, masking, etching, and various other technologies related to the manufacture of circuit boards.

[0055] Specifically, the circuit board manufacturing apparatus 90 first arranges the wiring materials on the surface and inside the base material 71 by a method such as etching, as shown in Figure 9(A), and then generally covers each surface of the base material 71 with insulating layers 72 and 73. However, at this time, the circuit board 70 has holes 73H formed where the wiring materials are exposed and not covered by the insulating layer 73 at the locations where the connection pads 80 are provided.

[0056] Next, as shown in Figure 9(B), the circuit board manufacturing apparatus 90 deposits a conductive material such as a metal in and around the hole 73H on the -Z direction side of the base material 71, thereby filling the hole 73H with the material.

[0057] Furthermore, the circuit board manufacturing apparatus 90 performs a process such as chemical mechanical polishing so that the polishing line PL shown in Figure 9(B) is on the -Z direction side of the surface. As a result, the circuit board manufacturing apparatus 90 can manufacture a circuit board 70 in which the substrate surface 70A is extremely flat, that is, both the insulating surface 73A and the pad surface 80A are extremely flat, and the step difference between them is kept to an extremely small level, as shown in Figure 9(C). Specifically, in the circuit board 70, the surface roughness of both the insulating surface 73A and the pad surface 80A is 10 [nm] or less. Also, in the circuit board 70, the substrate step difference, which is the distance in the Z direction (i.e., the normal direction of the insulating surface 73A) between the insulating surface 73A and the pad surface 80A, is 1 / 1000 or less compared to the shorter of the distances L2X and L2Y in the composite integrated film 1 (Figure 1(A)).

[0058] Incidentally, the circuit board 70 is provided with the same number of attachment areas 77 as the number of pixels that make up the image. For example, if the circuit board 70 has a resolution corresponding to so-called 4K (3840 x 2160 pixels), the attachment areas 77 (Figure 7) are arranged in a grid pattern of 3840 along the X direction and 2160 along the Y direction.

[0059] Next, the manufacturing of the LED display unit 61 will be described. As shown in the flowchart in Figure 10 and the schematic cross-sectional view in Figure 11, the LED display unit 61 is manufactured in stages through multiple processes using a predetermined display manufacturing apparatus 100.

[0060] Incidentally, in the display manufacturing apparatus 100, the circuit board 70 (Figures 7 and 8) is installed at a predetermined circuit board installation location with the insulating layer 73 facing upwards, and the forming substrate 51 (Figures 4 and 5) is installed at a predetermined forming substrate installation location with the forming surface 52 facing upwards.

[0061] When the display manufacturing apparatus 100 starts the LED display unit manufacturing procedure RT2 (Figure 10), it moves to the first step SP21, where, as shown in Figure 11(A), it picks up one composite integrated film 1 from the formation substrate 51 using the transfer stamp 101, and then moves to the next step SP22.

[0062] In step SP22, the display manufacturing apparatus 100 attaches the composite integrated film 1 to the circuit board 70 as shown in Figure 11(B), and then moves to the next step SP23. Specifically, the display manufacturing apparatus 100 first picks up one composite integrated film 1 and moves the transfer stamp 101 to the upper side (Z direction side) of the attachment area 77 on the circuit board 70 where the composite integrated film 1 has not yet been attached. As a result, the composite integrated film 1 is positioned so that the substrate back surface 2B and the electrode back surface 20B are facing the insulating surface 73A and the pad surface 80A of the circuit board 70, respectively, as shown in Figure 7.

[0063] Next, the display manufacturing apparatus 100 moves the transfer stamp 101 downward, so that, as shown in Figure 8, the film back surface 1B of the composite integrated film 1 comes into contact with the substrate surface 70A of the circuit board 70, and the substrate back surface 2B and electrode back surface 20B come into contact with the insulating surface 73A and pad surface 80A, respectively.

[0064] Furthermore, the display manufacturing apparatus 100 applies a predetermined pressure (pressure) to the composite integrated film 1 in the -Z direction (i.e., downward direction) using the transfer stamp 101. As a result, intermolecular forces are applied to the composite integrated film 1 between the substrate back surface 2B and the electrode back surface 20B, and between the insulating surface 73A and the pad surface 80A, respectively, and the film is attached to the circuit board 70 by intermolecular forces.

[0065] At this time, the back surface 20B of the electrodes is electrically connected to the pad surface 80A by intermolecular forces. That is, the connecting electrodes 21, 22, and 23 are electrically connected to the vertical wiring connecting pads 81, 82, and 83, respectively. The connecting electrode 24 is electrically connected to the horizontal common wiring connecting pad 84.

[0066] In step SP23, the display manufacturing apparatus 100 determines whether or not the composite integrated film 1 has been attached to all attachment areas 77 on the circuit board 70. If a negative result is obtained, the display manufacturing apparatus 100 returns to step SP21 and repeats the series of processes to sequentially attach the composite integrated film 1 to the remaining attachment areas 77.

[0067] On the other hand, if a positive result is obtained in step SP23, this indicates that the composite integrated film 1 has been attached to all attachment areas 77 on the circuit board 70. At this point, the display manufacturing apparatus 100 moves to the next step SP24, and as shown in Figure 11(C), drives each composite integrated film 1 by connecting the inspection control unit 103 to the circuit board 70 and supplying a predetermined image signal to the circuit board 70, and then moves to the next step SP25.

[0068] In step SP25, the display manufacturing apparatus 100 inspects the characteristics of each composite integrated film 1 and then moves on to the next step SP26. Specifically, the display manufacturing apparatus 100 positions the light receiving unit 104 opposite the circuit board 70, detects the amount of light received from each composite integrated film 1, and acquires the characteristics of each composite integrated film 1 based on this.

[0069] In step SP26, the display manufacturing apparatus 100 determines whether there were any areas where normal characteristics were not obtained, i.e., abnormal areas (also called defective areas), based on the characteristics obtained from each composite integrated film 1. Specifically, the display manufacturing apparatus 100 uses, for example, the magnitude of the amount of light obtained in relation to the current supplied to the composite integrated film 1 as a characteristic, and has a pre-stored normal range for this characteristic. Based on this, the display manufacturing apparatus 100 determines any area of ​​the composite integrated film 1 whose characteristics fell outside this normal range as an abnormal area.

[0070] If a positive result is obtained here, it indicates that repair work should be carried out on the defective area, specifically that the composite integrated film 1 at the defective area should be replaced (i.e., swapped). At this point, the display manufacturing apparatus 100 moves on to the next step SP27.

[0071] In step SP27, the display manufacturing apparatus 100 peels the composite integrated film 1 at the defective area from the circuit board 70 and moves to the next step SP28. Specifically, as shown in Figure 11(D), the display manufacturing apparatus 100 first brings the peeling head 105 close to the defective area and discharges a predetermined solvent to the defective area, thereby reducing the bonding force of the composite integrated film 1 to the circuit board 70. Subsequently, as shown in Figure 11(E), the display manufacturing apparatus 100 moves the transfer stamp 101 to the defective area and moves it in the -Z direction, adsorbing the composite integrated film 1 and moving it in the Z direction, thereby peeling the composite integrated film 1 from the circuit board 70.

[0072] At this time, although the intermolecular force bond between the substrate surface 70A of the circuit board 70 and the film back surface 1B of the composite integrated film 1 is released, the surface remains almost undamaged and maintains its physical shape well. In other words, the circuit board 70 can maintain an extremely flat state at the abnormal location, both on the insulating surface 73A and the pad surface 80A. Subsequently, the display manufacturing apparatus 100 transports the peeled composite integrated film 1 to a predetermined abnormal film integration location.

[0073] In step SP28, the display manufacturing apparatus 100 attaches a new composite integrated film 1 to the defective area of ​​the circuit board 70, i.e., the area where the composite integrated film 1 has peeled off, and then moves on to the next step SP29. Specifically, the display manufacturing apparatus 100 performs the same processing as in steps SP21 and SP22 to attach a new composite integrated film 1 to the defective area of ​​the circuit board 70, and bonds the electrode back surface 20B of the composite integrated film 1 and the pad surface 80A of the circuit board 70 by intermolecular forces.

[0074] In step SP29, the display manufacturing apparatus 100 determines whether or not repair work has been completed for all detected abnormalities. If a negative result is obtained, the display manufacturing apparatus 100 returns to step SP27 and repeats the series of processes to replace (replace) the composite integrated film 1 for the remaining abnormalities.

[0075] On the other hand, if a positive result is obtained in step SP29, this indicates that the replacement process of the composite integrated film 1 has been completed at all abnormal locations, and therefore the characteristics should be inspected again. At this point, the display manufacturing apparatus 100 returns to step SP24 and repeats the series of processes. Incidentally, when the display manufacturing apparatus 100 performs the process in step SP25 for the second time or later, it inspects the characteristics only at the previously abnormal locations.

[0076] On the other hand, if a negative result is obtained in step SP26, this indicates that the characteristics of all composite integrated films 1 attached to the circuit board 70 are within the normal range and that the LED display unit 61 can operate normally, that is, the LED display unit 61 is complete. At this point, the display manufacturing apparatus 100 moves on to the next step SP30.

[0077] In step SP30, the display manufacturing apparatus 100 completes the LED display unit manufacturing procedure RT2. Incidentally, the display manufacturing apparatus 100 can sequentially manufacture LED display units 61 by repeatedly executing this LED display unit manufacturing procedure RT2.

[0078] [5. Effects, etc.] In the above configuration, the composite integrated film 1 according to this embodiment has an extremely flat film back surface 1B, which is composed of the substrate back surface 2B and the electrode back surface 20B. Specifically, in the composite integrated film 1, the substrate back surface 2B and the electrode back surface 20B are planar and parallel to each other, the surface roughness of each is 10 nm or less, and the step difference, which is the distance between the two in the Z direction, is 1 / 1000 or less of the short side on the XY plane of the outer shape of the substrate back surface 2B.

[0079] Furthermore, in this embodiment, the circuit board 70 has an extremely flat substrate surface 70A, which is composed of an insulating surface 73A and a pad surface 80A. Specifically, in the circuit board 70, chemical mechanical polishing is performed (Figure 9(C)) to make the insulating surface 73A and the pad surface 80A parallel to each other, with a surface roughness of 10 [nm] or less for each, and the distance between them in the Z direction (i.e., the step difference) is made extremely small, thereby forming a substantially single flat plane.

[0080] As a result, in the LED display unit 61 according to this embodiment, by simply bringing the composite integrated film 1 into contact with the attachment area 77 of the circuit board 70 and applying a predetermined pressure, the electrode back surface 20B of the composite integrated film 1 and the pad surface 80A of the circuit board 70 can be bonded by intermolecular forces, thereby creating a physical and electrical connection. In other words, the LED display unit 61 can electrically connect the circuit board 70 and the circuit board 70 simply by attaching the composite integrated film 1 to the circuit board 70, without performing bonding wire or lithography wiring formation processes, or annealing processes to improve contact between the semiconductor surface and the wiring material. Therefore, the LED display unit 61 does not require high temperatures to be applied to the circuit board 70, thus avoiding significant damage.

[0081] In this case, in the LED display unit 61, the boundary line between the substrate back surface 2B and the electrode back surface 20B in the composite integrated film 1 may not necessarily coincide with the boundary line between the insulating surface 73A and the pad surface 80A in the circuit board 70. That is, in the LED display unit 61, for example, the boundary line between the substrate back surface 2B and the electrode back surface 20B may come into contact with the pad surface 80A. However, in the composite integrated film 1, the substrate back surface 2B is extremely flat, similar to the electrode back surface 20B, and the difference in height between the two is extremely small. Therefore, in the LED display unit 61, the intermolecular force bonding between the pad surface 80A and the electrode back surface 20B is not hindered by the substrate back surface 2B, and rather, intermolecular forces can be applied between the pad surface 80A and the substrate back surface 2B, thereby increasing the bonding force between the composite integrated film 1 and the circuit board 70.

[0082] Furthermore, the LED display unit 61 can apply intermolecular forces between the composite integrated film 1 and the back surface 2B of the substrate, even at locations other than the pad surface 80A on the circuit board 70, namely the insulating surface 73A. This allows the LED display unit 61 to maintain the state in which the composite integrated film 1 is attached to the circuit board 70 in good condition.

[0083] By the way, when joining two objects together, adhesives are sometimes used. Some adhesives exert their adhesive effect by utilizing intermolecular forces. Generally, adhesives are liquid and are bonded by applying them to the bonding surfaces of both objects and allowing them to harden while sandwiched together. When using such adhesives, separating objects that have been bonded together requires physically destroying the hardened adhesive, which may damage the objects in question.

[0084] Furthermore, in areas where electrical connections are required, such as the joint between electrodes on a circuit board and electrodes on a component, bump connections often form, creating an alloy through eutectic formation between the electrodes. In this case, it is possible to eliminate the bump connections using methods such as laser removal, but this inevitably causes considerable damage, especially to the electrodes on the circuit board.

[0085] In contrast, the LED display unit 61 according to this embodiment does not use such adhesives, but instead directly contacts the film back surface 1B of the composite integrated film 1 with the substrate surface 70A of the circuit board 70, thereby achieving physical and electrical bonding by directly applying intermolecular forces between them. For this reason, in this embodiment, if an abnormal area (defective area) is detected during the manufacturing process of the LED display unit 61, the composite integrated film 1 can be peeled off very easily with almost no damage to the circuit board 70, and a new composite integrated film 1 can be attached to the same area (Figures 10 and 11).

[0086] Furthermore, if no defects are detected during the manufacturing process of the LED display unit 61, it becomes a finished product as is (Figure 10, step SP26). In other words, during the manufacturing process of the LED display unit 61, the composite integrated film 1 is bonded to the circuit board 70 by intermolecular forces, thereby electrically connecting the two and maintaining the bonded state to a certain extent. In this state, the LED display unit 61 can perform operational tests by supplying current to each composite integrated film 1, and each composite integrated film 1 can be replaced with minimal damage to the circuit board 70. Also, for areas where it has been confirmed that there are no defects, the LED display unit 61 can be completed as is, i.e., there are no defects and each composite integrated film 1 is fixed with sufficient strength, because this temporary fixing state has sufficient bonding strength. As a result, the LED display unit 61 can significantly reduce the rate of defective products and significantly increase the proportion of good products (so-called yield).

[0087] Furthermore, in the LED display unit 61, if an abnormality is detected during the manufacturing process, the intermolecular forces bonding of the composite integrated film 1 at the abnormal location can be released and the film can be peeled off, and a new composite integrated film 1 can be attached to the same location to resolve the defect. For this reason, the LED display unit 61 does not require redundant circuits or redundant elements as disclosed in Patent Documents 1 and 2, and the spacing between the attachment areas 77 on the circuit board 70 can be kept to the minimum necessary. As a result, the LED display unit 61 and the LED display device 60 incorporating it can increase the integration density of display pixels, i.e., the mounting density and pixel density, and display high-definition images.

[0088] Incidentally, regarding the composite integrated film 1, one possible method is to provide, for example, circuits for detecting defects or pads for contacting probes on the composite integrated film, and to perform inspection before attaching it to the circuit board 70. However, with this method, the area of ​​the composite integrated film increases in order to provide the circuits or pads, which reduces the pixel density when it is attached to the LED display unit 61. In addition, with this method, it is necessary to make precise contact of the tester needle or the like with the pads during inspection, which may lead to a significant increase in work time.

[0089] In contrast, in this embodiment, the composite integrated film 1 is inspected while attached to the circuit board 70 used as an actual product, and if it is normal, it is not replaced, thus enabling extremely efficient manufacturing. Furthermore, in this embodiment, there is no need to provide extra circuits or probes, so the area of ​​the substrate thin film 2, that is, the area required for one pixel, can be minimized, and the pixel density can be increased when it is attached to the LED display unit 61.

[0090] Furthermore, in the manufacturing process, the composite integrated film 1 is produced by sequentially laminating each part onto an extremely flat formed surface 52 (Figures 2 and 3). Therefore, the composite integrated film 1 can be easily produced without the need to perform a process to flatten the film back surface 1B again, making the film back surface 1B extremely flat, that is, making both the substrate back surface 2B and the electrode back surface 20B extremely flat, and keeping the difference in height between them extremely small.

[0091] With the above configuration, the composite integrated film 1 has an extremely flat film back surface 1B, which is composed of a substrate back surface 2B and an electrode back surface 20B. The circuit board 70 also has an extremely flat substrate surface 70A, which is composed of an insulating surface 73A and a pad surface 80A. As a result, the LED display unit 61 can connect the electrode back surface 20B of the composite integrated film 1 and the pad surface 80A of the circuit board 70 by intermolecular forces, and operate the composite integrated film 1 while it is physically and electrically connected to them, allowing for inspection of its characteristics and easy replacement of the composite integrated film 1 in case of defects. This enables the LED display unit 61 to significantly increase yield while increasing mounting density.

[0092] [6. Other Embodiments] In the above-described embodiment, the case described is one in which the connecting electrode 20 (connecting electrode 21, etc.) in the composite integrated film 1 fills the entire area of ​​the substrate through-hole 2V (substrate through-hole 2V1, etc.) provided in the substrate thin film 2 (Figure 1). However, the present invention is not limited to this, and for example, as shown in the composite integrated film 201 in Figures 12(A) and (B), which correspond to Figures 1(A) and (B), the connecting electrodes 221, 222, and 223 may be formed in a shape that fills only a part of the substrate through-holes 2V1, 2V2, and 2V3. Incidentally, Figure 12(B) shows the D1-D2 cross section in Figure 12(A). In short, it is sufficient that the electrode back surface 21B, etc. to the anode terminal surface 11A, etc. is electrically connected by a part of the connecting electrode 21, etc. or the anode wiring material 41, etc. riding up from inside the substrate through-hole 2V1, etc. to the substrate thin film 2 or the red light-emitting element 11, etc. Furthermore, when the composite integrated film 1 is attached to the circuit board 70, it is sufficient that the electrode back surface 21B, etc., which is the -Z direction surface of the connecting electrode 21, etc., is flat and forms a plane substantially identical to the substrate back surface 2B, and has a sufficient area. This is sufficient so that the connecting electrode 21, etc., can be joined to the longitudinal wiring connection pads 81, etc., of the circuit board 70 (Figure 7, etc.) by intermolecular forces of sufficient magnitude, and that an electrically connected state can be maintained between them. The same applies to the connecting electrode 24.

[0093] Furthermore, in the above-described embodiment, the case in which the composite integrated film 1 has substrate through holes 2V1, 2V2, and 2V3 formed in the substrate thin film 2 as independent through holes was described (Figure 1). However, the present invention is not limited to this, and for example, as shown in Figure 13, which corresponds to Figure 1(A), a single through hole 302V1 that is long in the X direction may be provided in the substrate thin film 302, and connecting electrodes 321, 322, and 323 that fill a part of this through hole 302V1 may be provided separated from each other in the X direction. In this case, it is sufficient that the -Z direction surfaces of the connecting electrodes 321, 322, and 323 are flat and have a sufficient area, and that they are electrically isolated from each other.

[0094] Furthermore, in the embodiments described above, a case was described in which, in the composite integrated film 1, substrate through holes 2V1, 2V2, and 2V3 surrounded by the periphery are provided on the inside of the substrate thin film 2, and connecting electrodes 21, 22, and 23 are provided to fill these holes (Figure 1). However, the present invention is not limited to this, and for example, as in the composite integrated film 401 shown in Figures 14(A) and (B), which correspond to Figures 1(A) and (B), the substrate thin film 402 may have notches 402C1, 402C2, and 402C3 cut out from the outer circumference inward instead of substrate through holes 2V1, 2V2, and 2V3. In this case, connecting electrodes 421, 422, and 423 can be provided, respectively, with a shape that fills only a part of the notches 402C1, 402C2, and 402C3. Incidentally, Figure 14(B) shows the E1-E2 cross section in Figure 14(A). The same applies to the connecting electrode 24.

[0095] Furthermore, in the embodiments described above, a case was described in which connection pads 80 (vertical wiring connection pads 81, 82, and 83 and horizontal common wiring connection pad 84) are provided on the substrate surface 70A of the circuit board 70 at locations corresponding to the connection electrodes 20 of the composite integrated film 1. However, the present invention is not limited to this, and for example, as shown in Figures 15 and 16, which correspond to Figures 7 and 8, in addition to the connection pads 80, sub-connection pads 591, 592, and 593 made of a conductive material may be provided at positions facing the substrate back surface 2B of the composite integrated film 1. These sub-connection pads 591, etc., bond their respective pad surfaces 591A, 592A, and 593A to the substrate back surface 2B of the composite integrated film 1 (i.e., the part other than the electrode back surface 20B) by intermolecular forces, and thus contribute to maintaining the state in which the composite integrated film 1 is attached to the circuit board 70. Furthermore, since the sub-connection pads 591, etc. are appropriately connected to the vertical wiring materials 74, etc. inside the circuit board 570, they can efficiently transfer the heat generated in the composite integrated film 1 into the circuit board 570, that is, they can function as heat dissipation members. Moreover, since the sub-connection pads 591, etc. are appropriately connected to the vertical wiring materials 74, etc., they can also be used, for example, in the inspection of the circuit board 70, by bringing a probe connected to a predetermined inspection jig into contact with them to measure or test electrical characteristics.

[0096] Furthermore, the above-described embodiment described a case where the substrate thin film 2 is rectangular when viewed from the Z direction. However, the present invention is not limited to this, and the substrate thin film 2 may be triangular, hexagonal, octagonal, circular, or any other shape. For example, it can be a shape that can be efficiently manufactured on the forming substrate 51 during the manufacturing of the composite integrated film 1, or a shape that can efficiently arrange multiple composite integrated films 1 on the circuit board 70, and so on, depending on various purposes.

[0097] Furthermore, in the embodiments described above, we have described a case in which one composite integrated film 1 corresponds to one pixel by providing one red light-emitting element 11, one green light-emitting element 12, and one blue light-emitting element 13 on one substrate thin film 2. However, the present invention is not limited to this, and one composite integrated film may correspond to multiple pixels, for example, by providing two red light-emitting elements 11, two green light-emitting elements 12, and two blue light-emitting elements 13 on a substrate thin film of the same size and shape as two substrate thin films 2, thereby corresponding to two pixels.

[0098] Furthermore, in the above-described embodiment, we have described a case in which three types of light-emitting elements (red light-emitting element 11, green light-emitting element 12, and blue light-emitting element 13) that emit light of three different colors (red, green, and blue) are provided on the substrate surface 2A of the substrate thin film 2 in the composite integrated film 1 (Figure 1). However, the present invention is not limited to this, and two or fewer types or four or more types of light-emitting elements that emit light of different or the same color may be provided. In addition, not limited to light-emitting elements, various electronic elements having various functions, such as light-receiving elements, may be provided, and furthermore, multiple types of elements may be combined and provided to constitute various devices using them. For example, by providing a pn junction photodiode on the substrate surface 2A, an image sensor device may be configured instead of an LED display device 60. Alternatively, by providing a capacitive device or the like on the substrate surface 2A, a contact area sensor device (so-called touch panel) may be configured instead of an LED display device 60. In these cases, the number of connection electrodes connected to each element is not limited to two, but may be three or more.

[0099] Furthermore, in the embodiments described above, for example, with respect to the red light-emitting element 11, the case in which the anode wiring material 41 is directly connected to the anode terminal surface 11A and the connecting electrode 21, respectively, and the cathode wiring material 44 is directly connected to the cathode terminal surface 11K and the connecting electrode 24, respectively, was described (Figure 1). However, the present invention is not limited to this, and for example, contact electrodes may be provided between the anode terminal surface 11A and the anode wiring material 41, or between the cathode terminal surface 11K and the cathode wiring material 44. This makes it possible to avoid the occurrence of nonlinear resistance, as the connection point between the semiconductor and the metal becomes a so-called Schottky connection. The same applies to the green light-emitting element 12 and the blue light-emitting element 13.

[0100] Furthermore, in the embodiments described above, a case was described in which a group of light-emitting elements 10, connecting electrodes 20, interlayer insulating films 31 and 32, and a group of wiring materials 40 are provided on the substrate thin film 2 in the composite integrated film 1 (Figure 1). However, the present invention is not limited to this, and various components and materials such as surface protective films, reflectors, and heat dissipation materials, or combinations thereof, may be provided in the composite integrated film.

[0101] Furthermore, in the embodiments described above, the case in which a forming substrate 51 having an extremely flat forming surface 52 is used in the manufacturing process of the composite integrated film 1 was described (Figure 3(A)). However, the present invention is not limited to this, and for example, a forming substrate having a planarization layer or a forming substrate that has undergone processing such as polishing may also be used.

[0102] Furthermore, in the above-described embodiment, the case in which the light-emitting element group 10 manufactured by a predetermined LED manufacturing apparatus, etc., is transferred to the substrate surface 2A of the substrate thin film 2 was described in the manufacturing process of the composite integrated film 1 (Figure 2, step SP4). However, the present invention is not limited to this, and for example, the light-emitting element group 10 may be formed by performing various manufacturing processes on the substrate surface 2A similar to those for various semiconductors.

[0103] Furthermore, in the above-described embodiment, the case in which the connecting electrodes 20 and the wiring material group 40 are sequentially provided by independent processes in the manufacturing process of the composite integrated film 1 was described (Figure 3). However, the present invention is not limited to this, and for example, the connecting electrodes 20 and the wiring material group 40 may be formed simultaneously from the same material, and parts that are electrically connected to each other, such as the connecting electrode 21 and the anode wiring material 41, may be integrated.

[0104] Furthermore, in the above-described embodiment, we described a case in which, in the manufacturing process of the composite integrated film 1, step SP4 is performed to transfer the light-emitting element group 10 after step SP3 to form the connecting electrode 20. However, the present invention is not limited to this, and for example, the connecting electrode 20 may be formed after transferring the light-emitting element group 10. In this case, as described above, the connecting electrode 20 and the wiring material group 40 may be formed together.

[0105] Furthermore, in the embodiments described above, the case in which one composite integrated film 1 is picked up from the forming substrate 51 using a transfer stamp 101 and attached to the circuit board 70 during the manufacturing process of the LED display unit 61 was described (Figure 10, steps SP21 and SP22, and Figures 11(A) and (B)). However, the present invention is not limited to this, and for example, multiple composite integrated films 1 may be picked up from the forming substrate 51 and attached to the circuit board 70 using a transfer stamp capable of picking up multiple composite integrated films 1 at once.

[0106] Furthermore, in the above-described embodiment, the case in which pressure is applied when the composite integrated film 1 is attached to the circuit board 70 using the transfer stamp 101 during the manufacturing process of the LED display unit 61 was described (Figure 10, step SP22). However, the present invention is not limited to this, and for example, a certain amount of heat may be applied along with the pressure.

[0107] Furthermore, in the above-described embodiment, when an abnormality is detected in the manufacturing process of the LED display unit 61, a predetermined solvent is discharged from the peeling head 105 to the abnormality to weaken the intermolecular forces before peeling the composite integrated film 1 from the circuit board 70 (Figure 10, step SP27). However, the present invention is not limited to this, and for example, the composite integrated film 1 may be peeled from the circuit board 70 after weakening the intermolecular forces by other methods, or without weakening the intermolecular forces.

[0108] Furthermore, in the above-described embodiment, when no abnormalities are detected in the manufacturing process of the LED display unit 61, the LED display unit 61 is completed with the connecting electrode 20 of the composite integrated film 1 and the connecting pad 80 of the circuit board 70 bonded only by intermolecular forces (Figure 10, step SP26). However, the present invention is not limited to this, and for example, when no abnormalities are detected (in the case of a negative result in step SP26), at least one of high pressure or heat may be applied to form a eutectic bond between the two, thereby further increasing the bonding strength between them. In this case, the state in which the two are bonded only by intermolecular forces can be treated as a "temporarily fixed" state in which they are electrically connected and fixed with a relatively small force that allows for easy replacement, while the state in which a eutectic bond has been formed can be treated as a "permanently fixed" state in which they are strongly fixed with a relatively large force that prevents easy peeling.

[0109] Furthermore, in the embodiments described above, the circuit board 70 is made flat by constructing the base material portion 71 of the circuit board 70 from glass epoxy resin, and the LED display device 60 is made into a so-called flat panel display. However, the present invention is not limited to this, and for example, by using a flexible substrate that has flexibility instead of the circuit board 70, an LED display device may be configured as a flexible display that can be bent and curved.

[0110] Furthermore, the present invention is not limited to the embodiments described above or any other embodiments. That is, the scope of application of the present invention extends to embodiments that arbitrarily combine some or all of the embodiments described above and any other embodiments described above, as well as embodiments that extract some of them.

[0111] Furthermore, in the above-described embodiment, we have described a case in which a composite integrated film 1 is constructed using a substrate thin film 2 as a substrate thin film, a substrate through-hole 2V as a through-hole, a connecting electrode 20 as an electrode, and a group of light-emitting elements 10 as an element. However, the present invention is not limited to this, and a composite integrated film may be constructed using a substrate thin film, through-hole, electrode, and element with various other configurations. [Industrial applicability]

[0112] This invention can be used, for example, in an LED display that has multiple LEDs arranged together. [Explanation of symbols]

[0113] 1...Composite integrated film, 1B...Back surface of film, 2...Substrate thin film, 2A...Substrate surface, 2B...Back surface of substrate, 2V, 2V1, 2V2, 2V3, 2V4...Substrate through-hole, 10...Emitting element group, 11...Red light-emitting element, 12...Green light-emitting element, 13...Blue light-emitting element, 11A, 12A, 13A...Anode terminal surface, 11K, 12K, 13K...Cathode terminal surface, 20, 21, 22, 23, 24...Connecting electrodes, 20B, 21B, 22B, 23B, 24B...Back surface of electrodes, 40...Wiring material group, 41, 42, 43...Anode wiring material, 44, 45, 46...Cathode wiring material, 50...Manufacturing equipment, 51...Formation substrate, 52...Formation surface, 53...Thin Film layer, 60...LED display device, 61...LED display display unit, 66...Display driver, 70...Circuit board, 70A...Substrate surface, 71...Base material part, 72, 73...Insulating layer, 73A...Insulating surface, 74...Vertical wiring material, 75...Horizontal common wiring material, 76...Internal wiring material, 77...Attachment area, 80...Connection pad, 80A, 81A, 82A, 83A, 84A, 591A, 592A, 593A...Pad surface, 81, 82, 83...Vertical wiring connection pad, 84...Horizontal common wiring connection pad, 90...Circuit board manufacturing equipment, 402C1, 402C2, 402C3...Notch, 591, 592, 593...Sub-connection pad.

Claims

1. A preparation step of preparing a composite integrated film having a substrate thin film that adheres to a flat forming substrate and a planar electrode surface that adheres to the forming substrate, A pickup step of picking up the composite integrated film from the formed substrate, A first bonding step involves bonding the composite integrated film to the substrate surface of the circuit board. It has, The composite integrated film is provided in advance on the forming substrate and comprises the substrate thin film, one or more through portions penetrating the first and second substrate surfaces facing each other in the substrate thin film, one or more electrodes having the electrode surface on the second substrate surface side, and elements provided on the first substrate surface. In the first bonding step, the second substrate surface of the composite integrated film is bonded to the substrate surface. A method for manufacturing a semiconductor composite device, characterized by the following:

2. The first bonding step includes a pressurizing step of applying a predetermined pressure from the composite integrated film toward the circuit board, In the pressurizing step, the circuit board and the electrode surface are joined by intermolecular forces. A method for manufacturing a semiconductor composite device according to feature 1.

3. An inspection step of performing an inspection on the circuit board to which the composite integrated film is bonded, A peeling step in which the abnormal area determined by the inspection is peeled off, A bonding step of attaching a new composite film to the peeled-off area, If no abnormalities are detected in the inspection of the circuit board, a second bonding step is performed, in which at least one of the pressure or heat above the predetermined pressure is applied to bond the circuit board. A method for manufacturing a semiconductor composite device according to claim 2, further comprising the above.

4. The peeling step includes a step of reducing the bonding strength of the composite integrated film to the circuit board by discharging a predetermined solvent to the abnormal area determined by the inspection. A method for manufacturing a semiconductor composite device according to feature 3.

5. A surface formation step of forming a flat surface on the substrate, A substrate thin film forming step of forming the substrate thin film that adheres to the formed surface, The through-hole forming step of forming the through-hole, An electrode surface forming step involves depositing a metal material in the through-hole and forming the electrode surface on the second surface side of the substrate, which is closer to the formed surface than the first surface of the substrate. It further possesses, In the pickup step, the second surface of the substrate is peeled off from the forming substrate. A method for manufacturing a semiconductor composite device according to any one of claims 1 to 4.

6. The aforementioned circuit board is A wiring formation step that forms multiple first-direction wirings and multiple second-direction wirings, An insulating layer forming step of forming an insulating layer on the first direction wiring and the second direction wiring, A hole-forming step of forming a hole in the insulating layer to expose either the first-direction wiring or the second-direction wiring, A connection pad forming step in which a plurality of connection pads are formed by depositing a conductive metal material in the hole and its surrounding area, A planarization step is performed to flatten the connection pad and the insulating layer so that they form the same plane. A method for manufacturing a semiconductor composite device according to claim 1, characterized in that it is manufactured by a manufacturing method including the following:

7. The first bonding step includes a pressurizing step of applying a predetermined pressure from the composite integrated film toward the circuit board, In the pressurizing step, the circuit board and the electrode surface are joined by intermolecular forces. An inspection step of performing an inspection on the circuit board to which the composite integrated film is bonded, If no abnormalities are detected in the inspection of the circuit board, a second bonding step is performed, in which at least one of the pressure or heat above the predetermined pressure is applied to bond the circuit board. It further possesses, In the first bonding step, the electrode surface is bonded to the plurality of connection pads on the circuit board by intermolecular forces, and the substrate thin film is bonded to the insulating layer by intermolecular forces. In the second bonding step, the electrode surface is bonded to the connecting pad by forming a eutectic bond with it. A method for manufacturing a semiconductor composite device according to feature 6.

8. The surface of the formed substrate, the second surface of the substrate, the electrode surface, and the substrate surface all have a surface roughness of 10 nm or less. A method for manufacturing a semiconductor composite device according to any one of claims 1 to 7.

9. The film step, which is the distance between the second surface of the substrate and the electrode surface in the direction normal to the second surface of the substrate, is 1 / 1000 or less of the shortest side of the outer shape of the substrate thin film. A method for manufacturing a semiconductor composite device according to any one of claims 1 to 8.

10. The film step, which is the distance at which the electrode surface protrudes from the second surface of the substrate in the direction normal to the second surface of the substrate, is 1 / 1000 or less of the shortest side of the outer shape of the substrate thin film. A method for manufacturing a semiconductor composite device according to any one of claims 1 to 8.

11. The electrode is provided so as to rest on the first surface of the substrate. A method for manufacturing a semiconductor composite device according to any one of claims 1 to 10.

12. The electrode is provided such that it covers the through portion and its periphery from the first surface side of the substrate. A method for manufacturing a semiconductor composite device according to feature 11.

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