Method and apparatus for repairing defects in a sample using a focused particle beam

Abstract

The present invention relates to a method (1800) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), comprising the steps of: (a) generating (1850) at least one first localized conductive sacrificial layer (400, 500) on the sample (205, 300, 1500), the first localized conductive sacrificial layer (400, 500) having a first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560), the first portion (410, 510) being proximate to the at least one defect (320), and the first portion (410, 510) being adjacent to the at least one defect (320), (510) and the at least one second portion (420, 530, 540, 550, 560) are conductively connected (570, 580) to each other, a step (1850); and (b) a step (1860) of correcting drift of the focused particle beam (227) with respect to the at least one defect (320) being repaired by generating at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) on the at least one second portion (420, 530, 540, 550, 560) of the first localized conductive sacrificial layer (400, 500).

Description

Technical Field

[0001] This application claims the priority of German Patent Application DE102021210019.8, “Verfahren und Vorrichtung zum Reparieren eines Defekts einer Probe mit einem fokussierten Teilchenstrahl” (Method and apparatus for repairing a defect of a sample using a focused particle beam), filed with the German Patent and Trademark Office on September 10, 2021. The entire disclosure of Patent Application DE102021210019.8 is incorporated herein by reference.

[0002] The present invention relates to a method and an apparatus for repairing at least one defect of a sample using a focused particle beam.

Background Art

[0003] As a result of the continuous increase in integration density in electronic devices, photolithography masks and / or templates for nanoimprint lithography (NIL) need to image smaller structural elements than ever before onto the photoresist layer of a wafer or onto the substrate or wafer in a positive manner. To meet these requirements, the exposure wavelength of photolithography has been shifting to shorter wavelengths. Currently, argon fluoride (ArF) excimer lasers are mainly used for exposure purposes, and these lasers emit at a wavelength of 193 nm. To improve the resolution of the wafer exposure process, various different types, in addition to conventional binary photolithography masks, have been developed. Examples in this regard include phase shift masks or alternating phase shift masks with different transmittance levels, as well as masks for multiple exposures. By using multiple exposures, the resolution can be further improved.

[0004] Intensive research is being conducted on lithography systems that utilize wavelengths in the extreme ultraviolet (EUV) spectral range (10nm to 15nm). Currently, the first memory chips and logic products are on the market, and individual masks using EUV technology are already being used in their production. The proportion of EUV lithographic layers is expected to increase in future products.

[0005] Given the continuous decrease in the dimensions of structural elements, photolithography masks, photomasks, or simply masks, cannot necessarily be produced without printable or visible defects on the wafer. The density of visible or printable defects on photomasks increases sharply as structural dimensions decrease. Currently, EUV masks have the highest number of defects due to the exposure wavelength used. The problem of defect stamps or templates is similarly more severe in nanoimprint lithography. This is mainly due to the fact that, unlike photolithography, in NIL, the defect stamp or template transfers each defect on a 1:1 basis to the positive of the structured object placed on the wafer or generally on the substrate.

[0006] Because the production of photomasks and / or templates for NIL is very expensive, defective masks and / or stamps are always repaired whenever possible. Two important groups of defects in masks or stamps are, firstly, dark defects. These are areas where material is present but should be removed. These defects are repaired, preferably by removing excess material through a localized etching process.

[0007] Secondly, there are so-called clear defects. These are localized defects on the photomask that, during exposure in a wafer stepper or wafer scanner, have a higher light transmittance than the same defect-free reference location. Within the scope of the repair process, these defects can be corrected by localized deposition of a material with suitable optical properties on the mask or stamp.

[0008] Typically, defects in a mask or stamp are corrected by a particle beam-induced local etching process and / or local deposition process. In local processing, various influences (e.g., thermal and / or mechanical drift) can cause positional shifts between the element being corrected and the particle beam used for repair. Furthermore, the micromanipulator used to align the defect with the particle beam used for repair may experience electrical or mechanical drift over time.

[0009] To minimize these effects, a reference structure or reference mark is applied near the processing area on the sample and scanned at regular intervals. The deviation of the reference mark's position relative to the reference position is used in the sample processing procedure to correct the beam position of the particle beam. This is called "drift correction." In this art, the reference mark used for this purpose is called a "DC mark."

[0010] The subject matter of standard marks is examined in documents such as U.S. Patent No. 7,018,683, European Patent Application Publication No. 1,662,538, Japanese Patent Publication No. 2003-007247, U.S. Patent Application Publication No. 2007 / 0023689, U.S. Patent Application Publication No. 2007 / 0073580, U.S. Patent No. 6,740,456 (B2), U.S. Patent Application Publication No. 2010 / 0092876, and U.S. Patent No. 5,504,339.

[0011] Reference structures or reference marks are often generated by the deposition of material in the vicinity of a site on the sample being processed. Where possible, reference marks are applied to areas on the photomask where they do not interfere with the mask's operation. For example, these are elements of the absorber pattern in the case of a binary photomask. As a result of the smaller size of the pattern elements, the reference marks may have dimensions that reach or even exceed the size of the absorber pattern elements. And, in this case as well, in certain mask types, the reference marks must always be removed after the processing. For example, this applies to phase-shift masks. Similarly, reference marks must also be removed from repaired stamps intended for use in NIL (Non-Liquid Inspection).

[0012] The applicant's U.S. Patent No. 9721754(B2) describes reference marks, and in their production, materials that can be removed from the mask by a standard mask cleaning process are used. However, materials suitable for this process typically have poor resistance to the local etching process of the processing. Due to this drawback, the deposited reference marks change significantly during the mask processing process, greatly reducing the accuracy with which the position of each reference mark can be determined.

[0013] German Patent Application Publication No. 102018217025 describes the application of a reference mark to a sacrificial layer to protect a sample when scanning the reference mark with a particle beam.

[0014] In the paper "Metal assisted focused-ion beam nanopatterning", Nanotechnology, 27 (2016) 36LT01, authors A. Kannegulla and L.-J. Cheng describe the use of a metal sacrificial layer to prevent the edges of NIL stamps from becoming rounded as a result of the sputtering effect of a focused ion beam.

[0015] In addition to the changes in the reference marks mentioned above, further problems may arise that limit or even eliminate the functionality within the range of drift correction. One problem that can occur within the processing steps performed in the form of a local deposition process is that the material used to correct bright defects may unintentionally deposit on the sample around the defect during the deposition procedure. Removing this material deposited around the defect from the sample can be extremely difficult because the material used to correct the defect is permanently attached to the repair site. The correction material unintentionally deposited around the defect being repaired can cause deterioration in the operational behavior of the repair mask or repair stamp.

[0016] Furthermore, particle beam-induced repair processes can result in the generation and / or introduction of charges in the mask or, more generally, in the sample. Electrostatic charging of the sample, particularly the resulting non-uniform distribution of electrostatic potential, can cause distortion during imaging of the treated area and / or scanning of a reference mark using a charged particle beam, ultimately leading to a degradation of the repair process quality.

[0017] Therefore, the object of the present invention is to specify a method and apparatus that can at least partially avoid the above-mentioned difficulties when repairing a sample using a focused particle beam. [Overview of the project]

[0018] According to a first exemplary embodiment of the present invention, this problem is solved by the method described in claim 1 and the apparatus described in claim 26. According to a second exemplary embodiment of the present invention, this problem is solved by the method described in claim 2 and the apparatus described in claim 27.

[0019] In one embodiment, a method for repairing at least one defect in a sample using a focused particle beam includes the step of generating at least one first sacrificial layer on the sample adjacent to the at least one defect in order to compensate for drift of the focused particle beam with respect to the at least one defect during the repair of the at least one defect.

[0020] In sample repair processes using particle beam-induced etching or particle beam-induced deposition, the particle beam may drift relative to the defect being repaired. For example, this drift may be due to thermal drift of the sample stage. A sacrificial layer may be used to correct this focused electron beam drift. The sacrificial layer adjacent to the defect may be located very close to the defect and therefore can be quickly accessed for drift evaluation and / or correction. Specifically, a structure associated with the sacrificial layer may be used to correct the drift. For example, a reference mark that can be used to detect the drift of the focused particle beam relative to the defect being repaired may be deposited on the sacrificial layer, although this is not mandatory. The sacrificial layer may be generated to be suitable for the deposition of the reference mark on the sacrificial layer.

[0021] In another embodiment, a method for repairing at least one defect in a sample using a focused particle beam includes the step of generating at least one first conductive sacrificial layer on the sample to compensate for drift of the focused particle beam with respect to at least one defect during the repair of the at least one defect.

[0022] Samples that are frequently repaired are either electrically insulating or possess some degree of semiconductor properties. Examples of the former group include photomasks or NIL stamped quartz substrates. Examples of the latter group include integrated circuits (ICs) produced on wafers. When a particle beam scans the sample and / or sacrificial layer, it can generate charge in the sample and / or sacrificial layer. This process can also occur when scanning the defect to be repaired. As a result, different localized charges may be generated in the sample during defect repair. However, because the conductive sacrificial layer balances the localized charges, the focused particle beam "sees" an equivalent electrostatic potential when scanning the sacrificial layer. Therefore, an electrically conductive sacrificial layer improves the accuracy of the focused particle beam positioning during the defect repair process of the sample. Thus, a conductive sacrificial layer improves drift compensation of the focused particle beam during the defect repair process.

[0023] The first sacrificial layer may include a first conductive sacrificial layer and / or a first local sacrificial layer (for example, a first local conductive sacrificial layer). The first conductive sacrificial layer may include a first local conductive sacrificial layer.

[0024] The focused particle beam generates charge (exclusively) in the first local conductive sacrificial layer. Due to the conductivity of the first sacrificial layer, the generated charge can be uniformly distributed throughout the first sacrificial layer. As a result, the charged particle beam anticipates substantially the same electrostatic potential when scanning the sacrificial layer and a reference mark that may be placed on or near the defect. This prevents various deflections of the charged particle beam when scanning over the defect and the conductive sacrificial layer, and consequently, various distortions in the image representation of, for example, the conductive sacrificial layer and the reference mark placed on the defect. Therefore, the quality of drift correction can be improved, and thus the quality of the defect correction process can be improved.

[0025] Here, the expression "substantially" represents, as elsewhere in this specification, the designation of a measurement variable within the customary error limits when using measurements according to the prior art.

[0026] In the present application, the expression "local sacrificial layer" means that the sacrificial layer does not extend across the entire sample. Rather, the first sacrificial layer can be deposited by a local particle beam induced deposition process around or on the whole or part of a defect and around it. As an example, the lateral extents of the local sacrificial layer can be less than 1 mm, less than 500 μm, or less than 100 μm.

[0027] The focused particle beam may include a focused electron beam.

[0028] More generally, the focused particle beam may include at least one element of the group consisting of a photon beam, an electron beam, an ion beam, an atom beam, and a molecule beam. The photon beam may include a photon beam in the ultraviolet (UV), deep ultraviolet (DUV), or extreme ultraviolet (EUV) wavelength range.

[0029] The focused particle beam preferably includes a focused electron beam and / or a focused ion beam. Since electron beams and ion beams can be focused into much smaller spots than photon beams, the spatial resolution during defect repair can be easily increased. Furthermore, electron beams and ion beams can be generated and imaged more easily than atom beams or molecule beams.

[0030] Scanning a sample with a focused particle beam can cause damage to the scanned area of ​​the sample. The extent of the damage depends on the type of particle beam. For example, ion beams, atomic beams, or molecular beams can cause significant damage to the scanned area as a result of large-scale momentum transfer from the more massive particles to the sample grating. Furthermore, some of the particles from the ion beam, atomic beam, or molecular beam may be incorporated into the sample grating, resulting in localized changes in its properties (e.g., its optical properties).

[0031] In contrast, electron beams, due to their low electron mass, typically cause only minimal damage to the sample's scanning area. As a result, using electrons for defect repair facilitates sample defect treatment without significant side effects. Therefore, in principle, the use of electrons is preferred over the use of ions in focused particle beams.

[0032] The method described above may further include the step of generating at least one first reference mark on the first sacrificial layer.

[0033] The step of generating at least one first reference mark may include generating the at least one first reference mark at a distance from at least one defect such that repairing at least one defect does not substantially alter the at least one first reference mark.

[0034] A first reference mark, used to correct drift during a defect repair process and applied in the immediate vicinity of the defect being repaired, may be altered by the repair process, potentially impairing its function as a means of drift correction. Firstly, material deposits during a local deposition process to form the first reference mark, and secondly, the structure of the first reference mark may be altered by a repair process in the form of an etching process. The method of this application allows for the application of the first reference mark at a distance from the defect being repaired, at which distance the repair process does not substantially alter at least one of the first reference marks.

[0035] At least one first reference mark may have a lateral range of 1 nm to 1000 nm, preferably 2 nm to 500 nm, more preferably 5 nm to 100 nm, and most preferably 10 nm to 50 nm. Furthermore, the condition that the lateral range of the reference mark does not exceed the field of view of the scanning particle microscope gives rise to another requirement regarding the maximum range of the reference mark.

[0036] The first sacrificial layer may have a first portion and at least one second portion, the first portion may be adjacent to at least one defect, and the first portion and at least one second portion may be electrically connected to each other.

[0037] In the first conductive sacrificial layer, both the first portion and at least one second portion are conductive. The conductivity of the first portion, at least one second portion, and the connections between the first portion and at least one second portion can be the same or slightly different. In this application, the term "electrically conductive" means that the specific electrical resistivity of the sacrificial layer is on the order of a metal conductor, i.e., ρ < 1 Ω·cm.

[0038] The first part may have a lateral range around at least one defect such that repairing at least one defect does not substantially damage the sample.

[0039] The first portion of the first sacrificial layer represents a protective layer during the defect processing or defect repair process. The latter may be adapted, firstly, to the dimensions of the defect to be repaired and the focal diameter of the particle beam used for repair, and secondly, to the type of defect repair performed. In the above context, the expression "substantially" means that any damage to the functionality of the sample as a result of the repair process performed cannot be demonstrated after the defect repair.

[0040] Defect repair is preferably performed within the field of view of the focused particle beam. This embodiment is advantageous in that it does not require modification of the parameters of the device providing the particle beam for the purpose of scanning a first reference mark during the repair process. This allows for the best possible correction of drift. As an example, the field of view of the scanning particle microscope may include an area of ​​1000 μm × 1000 μm, preferably 100 μm × 100 μm, more preferably 10 μm × 10 μm, and most preferably 6 μm × 6 μm.

[0041] Furthermore, the lateral dimensions of the first sacrificial layer may exceed the field of view of the focused particle beam. For example, this can occur when the defect to be repaired is large. The first portion may have a lateral range extending around the edge of at least one defect over a range of 1 nm to 1000 μm, preferably 2 nm to 200 μm, more preferably 5 nm to 40 μm, and most preferably 10 nm to 10 μm.

[0042] The thickness of the first portion may be in the range of 0.1 nm to 1000 nm, preferably 0.5 nm to 200 nm, more preferably 0.5 nm to 200 nm, and most preferably 2 nm to 50 nm.

[0043] The step of generating at least one reference mark may include generating at least one first reference mark at a certain distance from at least one defect such that repairing at least one defect does not substantially affect the drift correction.

[0044] This feature ensures that the structure of the first reference mark remains substantially unchanged throughout the processing. Therefore, the function of the first reference mark is maintained without limitations throughout the entire restoration process.

[0045] The method described above may further include the step of generating at least one first reference mark on at least one second portion of the first sacrificial layer in order to compensate for the drift of at least one defect during the repair of at least one defect.

[0046] The method described above may further include the step of determining at least one first reference distance between at least one first reference mark and at least one defect, prior to repairing at least one defect.

[0047] The adjacency of the first part to at least one defect may include at least one element of the group consisting of the adjacency of the first part to the edge of at least one defect, partial coverage of at least one defect by the first part, and complete coverage of at least one defect by the first part.

[0048] By framing the defect at the start of the repair process, the charged particle beam "expects" substantially the same electrostatic potential when scanning at least one first reference mark and the defect to be repaired. Furthermore, the framing of the defect by the first sacrificial layer can effectively protect the sample from the effects of the repair process. For example, deposited material may unintentionally deposit on the first sacrificial layer around the defect. In addition, while a local etching process is being performed for the purpose of repairing the sample, the first sacrificial layer framing the defect of excess material to be repaired protects the area of ​​the sample around the defect.

[0049] Once the repair process is complete, the first sacrificial layer can be removed from the sample along with the deposited material on the first sacrificial layer. As a result, by performing the method according to the present invention, defect correction with substantially no residue is facilitated, and consequently, improvements in drift correction and the quality of the defect repair process are further promoted.

[0050] The proximity of the first portion to the edge of at least one defect may include the proximity of the first portion to the entire edge of at least one defect. This embodiment is particularly advantageous when the defect on the sample is isolated.

[0051] At least one second portion may extend across the entire scanning region of the focused particle beam for detecting at least one first reference mark.

[0052] The first sacrificial layer may have a lateral range determined by the lateral range of the first part and the number of at least one second part.

[0053] The first portion and at least one second portion may be interconnected in the same plane. The coplanar connection between the first portion and one or more second portions requires the maximum cost to deposit the corresponding first sacrificial layer. And in this case as well, due to the large capacitance of the large area first sacrificial layer, the electrostatic potential of the first sacrificial layer changes only slightly even by scanning and / or charging by a focused particle beam of at least one reference mark during defect repair.

[0054] The conductive connection between the first portion and at least one second portion may have a width in the range of 0.1 nm to 1000 μm, preferably 20 nm to 100 μm, more preferably 30 nm to 10 μm, and most preferably 40 nm to 3 μm.

[0055] The thickness of the conductive connection between the first portion and at least one second portion may be in the range of 0.1 nm to 1000 nm, preferably 0.5 nm to 200 nm, more preferably 1 nm to 100 nm, and most preferably 2 nm to 50 nm.

[0056] The connection of the first part and at least one second part in the form of a conductive connection is considered convenient when the first part and at least one second part are at different levels. For example, the first part may be located on the substrate of the photomask and at least one second part may be located on the pattern element of the photomask.

[0057] At least one second portion may extend across the entire scanning region of the focused particle beam for the purpose of detecting at least one first reference mark.

[0058] While determining the position of at least one first reference mark, at least a majority of the particles of the focused particle beam may be incident on at least one second portion of the first sacrificial layer. The lateral range of at least one second portion may exceed the scanning area of ​​the focused particle beam for scanning at least one first reference mark, and is 1.2 times, preferably 1.5 times, more preferably 2 times, and most preferably 3 times.

[0059] The fact that at least one second portion around at least one first reference mark is larger by a specified factor than the scanning region scanned by the focused particle beam for the purpose of determining the position of at least one first reference mark ensures that the scanning of at least one first reference mark is substantially complete on the first sacrificial layer, even when the drift of the focused particle beam over defects is significant. This prevents uncontrollable localization of charge carriers in the sample.

[0060] An additional degree of freedom is gained by attaching at least one first reference mark to the first sacrificial layer, rather than directly depositing it on the sample. This allows the first sacrificial layer to be designed to be easily and substantially completely removed from the sample at the end of the sample processing process. Without this constraint, at least one first reference mark can be designed to withstand both multiple determinations of the position of the first reference mark and one or more extended processing processes of the sample that are substantially unchanged.

[0061] As an example, the area of ​​at least one second portion of the deposited first sacrificial layer can be square or rectangular. The lateral dimension is related to the shorter side of the rectangle. The area of ​​at least one second portion can be adapted to the area of ​​the scanning region of at least one focused particle beam.

[0062] The lateral range of at least one second portion may have a lateral dimension in the range of 10 nm to 1000 μm, preferably 50 nm to 500 μm, more preferably 200 nm to 100 μm, and most preferably 500 nm to 50 μm.

[0063] The thickness of at least one second portion may be in the range of 0.1 nm to 1000 nm, preferably 0.5 nm to 200 nm, more preferably 1 nm to 100 nm, and most preferably 2 nm to 50 nm.

[0064] The step of generating at least one first sacrificial layer may include depositing the first sacrificial layer with a focused particle beam in combination with a first precursor gas. The focused particle beam may include an electron beam.

[0065] The at least one first precursor gas may include at least one first deposit gas for depositing a first portion of the first sacrificial layer, at least one second deposit gas for depositing at least one second portion of the first sacrificial layer, and at least one third deposit gas for depositing conductive connections in the first sacrificial layer. The at least one first deposit gas, at least one second deposit gas, and at least one third deposit gas may include a single deposit gas, two different deposit gases, or three different deposit gases. The various functions of the first portion, one or more second portions, and conductive connections can be optimized by material compositions adapted to each.

[0066] At least one first precursor gas may contain molybdenum hexacarbonyl (Mo(CO)6) and nitrogen dioxide (NO2) as additive gases, and / or the first precursor gas may contain chromium hexacarbonyl (Cr(CO)6).

[0067] The step of generating at least one first reference mark may include depositing at least one first reference mark using a focused particle beam in combination with at least one second precursor gas. The focused particle beam for depositing at least one first reference mark may include an electron beam.

[0068] The first sacrificial layer and at least one first reference mark can be deposited using one particle beam or different particle beams. For example, the first sacrificial layer may be deposited using an electron beam and at least one second reference mark may be deposited using an ion beam.

[0069] At least one first precursor gas for depositing the first sacrificial layer may contain at least one element from the group consisting of metallic alkyls, transition element alkyls, main group alkyls, metallic carbonyls, transition element carbonyls, main group carbonyls, metallic alkoxides, transition element alkoxides, main group alkoxides, metal complexes, transition element complexes, main group complexes, and organic compounds.

[0070] The at least one second precursor gas for depositing at least one reference mark may contain at least one element from the group consisting of metallic alkyls, transition element alkyls, main group alkyls, metallic carbonyls, transition element carbonyls, main group carbonyls, metallic alkoxides, transition element alkoxides, main group alkoxides, metal complexes, transition element complexes, main group complexes, and organic compounds.

[0071] Metallic alkyls, transition element alkyls, and main group alkyls may contain at least one element from the group consisting of cyclopentadienyl (Cp)trimethylplatinum (CpPtMe3), methylcyclopentadienyl (MeCp)trimethylplatinum (MeCpPtMe3), tetramethyltin (SnMe4), trimethylgallium (GaMe2), ferrocene (Co2Fe), and bisarylchromium (Ar2Cr). Metallic carbonyls, transition element carbonyls, and main group carbonyls may contain chromium hexacarbonyl (Cr(CO)6), molybdenum hexacarbonyl (Mo(CO)6), tungsten hexacarbonyl (W(CO)6), dicobalt octacarbonyl (Co2(CO)8), tolthenium dodecacarbonyl (Ru3(CO) 12They may contain at least one element from the group consisting of ), and iron pentacarbonyl (Fe(CO)5). Metal alkoxides, transition element alkoxides, and main group alkoxides may contain at least one element from the group consisting of tetraethyl orthosilicate (TEOS, Si(OC2H5)4) and tetraisopropoxytitanium (Ti(OC3H7)4). Metal halides, transition element halides, and main group halides may contain at least one element from the group consisting of tungsten hexafluoride (WF6), tungsten hexachloride (WCl6), titanium hexachloride (TiCl6), boron trichloride (BCl3), and silicon tetrachloride (SiCl4). The metal complex, transition element complex, and main group complex may contain at least one element from the group consisting of copper bis(hexafluoroacetylacetonate) (Cu(C5F6HO2)2) and dimethyl gold trifluoroacetylacetonate (Me2Au(C5F3H4O2)). The organic compound may contain at least one element from the group consisting of carbon monoxide (CO), carbon dioxide (CO2), aliphatic hydrocarbons, aromatic hydrocarbons, components of vacuum pump oil, and volatile organic compounds.

[0072] The step of generating at least one first reference mark may include etching at least one depression in at least one second portion of the first sacrificial layer. Etching at least one depression may include performing a local etching process using a focused particle beam in combination with at least one third precursor gas. The focused particle beam may include an electron beam and / or an ion beam.

[0073] At least one third precursor gas may contain at least one etching gas. At least one etching gas may contain at least one element from the group consisting of halogen-containing compounds and oxygen-containing compounds. The halogen-containing compound may contain at least one element from the group consisting of fluorine (F2), chlorine (Cl2), bromine (Br2), iodine (I2), xenon difluoride (XeF2), dixenon tetrafluoride (Xe2F4), hydrofluoric acid (HF), hydrogen iodide (HI), hydrogen bromide (HBr), nitrosyl chloride (NOCl), phosphorus trichloride (PCl3), phosphorus pentachloride (PCl5), and phosphorus trifluoride (PF3). The oxygen-containing compound may contain at least one element from the group consisting of oxygen (O2), ozone (O3), water vapor (H2O), hydrogen peroxide (H2O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), and nitric acid (HNO3).

[0074] At least one first precursor gas, at least one second precursor gas, and / or at least one third precursor gas may include at least one additive gas from the group consisting of oxidizing agents, halides, and reducing agents.

[0075] The oxidizing agent may contain at least one element from the group consisting of oxygen (O2), ozone (O3), water vapor (H2O), hydrogen peroxide (H2O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), and nitric acid (HNO3). The halide may contain at least one element from the group consisting of chlorine (Cl2), hydrochloric acid (HCl), xenon difluoride (XeF2), hydrofluoric acid (HF), element (I2), hydrogen iodide (HI), bromine (Br2), hydrogen bromide (HBr), nitrosyl chloride (NOCl), phosphorus trichloride (PCl3), phosphorus pentachloride (PCl5), and phosphorus trifluoride (PF3). The reducing agent may contain at least one element from the group consisting of hydrogen (H2), ammonia (NH3), and methane (CH4).

[0076] The first precursor gas may contain molybdenum hexacarbonyl (Mo(CO)6), at least one additive gas may contain nitrogen dioxide (NO2), and / or the second precursor gas may contain tetraethyl orthosilicate (Si(OC2H5)4) or chromium hexacarbonyl (Cr(CO)6).

[0077] The step of removing a first portion of a first sacrificial layer covering at least one defect may include performing a particle beam-induced etching process using at least one fourth precursor gas. The at least one fourth precursor gas may include at least one second etching gas. The at least one second etching gas may include at least one element of the group of first etching gases listed above. The first deposition gas for depositing the first portion of the sacrificial layer may include elements of the group consisting of chromium hexacarbonyl (Cr(CO)6) and molybdenum hexacarbonyl (Mo(CO)6), and the at least one second etching gas for removing the first portion of the sacrificial layer may include nitrosyl chloride (NOCl) itself or a combination with at least one additive gas (e.g., water (H2O)).

[0078] The precursor gas for etching at least one first reference mark onto at least one second portion of the first sacrificial layer may include xenon difluoride (XeF2) in combination with an additive gas (e.g., oxygen (O2), water (H2O), or chlorine (Cl2). Alternatively, for example, nitrosyl chloride (NOCl) itself or in combination with an additive gas (e.g., water (H2O)) may be used to generate the first reference mark.

[0079] The method described above may further include the step of removing a portion of the first sacrificial layer covering at least one defect before repairing at least one defect.

[0080] At least one defect may include a defect in excess material, and the method may further include a step of repairing at least one defect by at least partially passing through the first sacrificial layer.

[0081] A first sacrificial layer, or a first portion of the first sacrificial layer, which extends partially or entirely over the entire defect in the excess material to be repaired, may be removed from the sample in a single process step, for example, using a local particle beam-induced etching process. In this case, if the etching rates of the defect and the etching rates of the material in the first portion of the first sacrificial layer differ significantly from each other, the etching gas and / or additive gas may be adapted to the progress of the etching process. Furthermore, other beam parameters of the particle beam and / or other process parameters may also be adapted to the progress of the etching process. The progress of the local etching process may be determined by analyzing the backscattered or secondary electrons generated during the etching process. As an addition or alternative, the removed material may be analyzed, for example, by SIMS (Secondary Ion Mass Spectroscopy) analysis. For this reason, it is preferable that an ion beam be used as the particle beam. Furthermore, the etching rate may be calibrated by separate optimization of the etching processes for the sacrificial layer and the material to be removed. As an example, this may be done by executing an etching sequence.

[0082] The first portion of the first sacrificial layer and at least one second portion may have a lateral range such that an action to repair at least one defect causes the image section containing at least one defect to be distorted by 10% or less, preferably 5% or less, more preferably 2% or less, and most preferably 1% or less. The action to repair defects with a focused particle beam may cause the conductive sacrificial layer to become charged. When the sacrificial layer becomes charged, distortion of the image section containing the defect or defect residue may occur. The distortion of the image section is related to the image section before the start of the repair process.

[0083] The charging of the sacrificial layer can have a local effect on the imaging parameters of the focused particle beam, which may result in local variations in those parameters. As a result of these local variations (e.g., local variations in the magnification of the image produced by the scanning focused particle beam), the image will be distorted compared to an image where the imaging parameters (e.g., magnification) are not locally varied.

[0084] The first part, at least one second part, and the conductive connection may have a material composition comprising at least one element from the group consisting of metals, metal-containing compounds, conductive ceramics, and doped semiconductor compounds.

[0085] The metal may contain at least one element from the group consisting of molybdenum, cobalt, chromium, niobium, tungsten, rhenium, ruthenium, and titanium. The metal-containing compound may contain at least one element from the group consisting of molybdenum alloys, cobalt-containing compounds, chromium-containing compounds, niobium-containing compounds, tungsten-containing compounds, rhenium-containing compounds, and titanium-containing compounds. The metal-containing compound may contain elements from the group consisting of nitrogen, oxygen, fluorine, chlorine, carbon, and silicon. The doped semiconductor compound may contain at least one element from the group consisting of indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), antimond-doped tin oxide (ATO), and fluorine-doped tin oxide (FTO). The conductive ceramic may contain molybdenum silicide.

[0086] The first part, at least one second part, and the conductive connections may have different material compositions.

[0087] The first sacrificial layer and at least one first reference mark may have different material compositions.

[0088] As a result, when scanning at least one first reference mark, differences in the topology of the first reference mark occur, as well as differences in material between at least one second portion of the first sacrificial layer and at least one first reference mark.

[0089] At least one defect may include a defect of excess material, and the operation to repair at least one defect may include selecting the material composition of a first portion of the first sacrificial layer, at least one second etching gas, and / or at least one additive gas, such that the etching rate of the etching process induced by the focused particle beam is substantially the same for at least one defect and the first portion.

[0090] By satisfying this condition, the curvature of the edges of the etched region that occurs in the case of localized etching of defects can be minimized. Furthermore, under-etching of the sample within the scope of defect correction can be avoided. At the same time, observing this condition makes it easier to maximize the steepness of the sidewalls of the etched region of the sample.

[0091] The sample may include a lithography sample. The lithography sample may include at least one element from the group consisting of a photomask and a stamp for nanoimprint lithography (NIL). However, the sample may also include at least one element from the group consisting of a photomask, a stamp for NIL, an integrated circuit (IC), a photonic integrated circuit (PIC), a microsystem (MEMS (microelectromechanical system) or MOEMS (micro-optical electromechanical system)), and a printed circuit board (PCB). The integrated circuit and / or photonic integrated circuit may be placed on a wafer. The photomask may be any type of transmission or reflection photomask (e.g., a binary or phase-shift mask).

[0092] This method may further include the step of determining at least one first reference distance between at least one first reference mark and at least one defect, before commencing repair of at least one defect.

[0093] By using at least one first reference distance in combination with at least one first reference mark, the drift of at least one defect relative to the focused particle beam can be compensated for in the defect repair process.

[0094] At least one first reference mark may have a height in the range of 1 nm to 1000 nm, preferably 2 nm to 500 nm, more preferably 5 nm to 200 nm, and most preferably 10 nm to 100 nm.

[0095] This method may further include the step of generating a defect map of the sample by scanning the sample with a focused particle beam.

[0096] The step of scanning the sample may include scanning at least one defect in the sample using a focused particle beam. The focused particle beam for scanning the sample may include a particle beam used to generate a first sacrificial layer, generate at least one first reference mark, and / or initiate a localized defect processing process. However, within the scope of the sample scanning, it is also possible to use a first particle beam (e.g., a photon beam) to identify at least one defect and a second particle beam (e.g., an electron beam) to detect the contour of the repair shape of at least one defect.

[0097] The apparatus performing the above-described method may receive the coordinates of at least one defect in the sample from the sample inspection apparatus. The defect map of the sample may include at least one defect in the sample. In particular, the defect map may include a repair shape for repairing at least one defect.

[0098] The method may further include the steps of generating at least one second reference mark on a sample and determining at least one second reference distance between the at least one second reference mark and at least one defect before the generation of the first sacrificial layer.

[0099] Furthermore, this method may include the steps of generating at least one second sacrificial layer on a sample, depositing at least one second reference mark on at least one second sacrificial layer, and determining at least one second reference distance between at least one second reference mark and at least one defect before the start of generation of the first sacrificial layer.

[0100] At least one second reference mark is required to compensate for drift during the deposition of the first sacrificial layer. Furthermore, at least one second reference mark is required to compensate for drift during the removal of the first portion of the first sacrificial layer covering at least one defect. Therefore, for process economic reasons, it may be advantageous to omit the deposition of at least one second sacrificial layer and apply the second reference mark directly to the sample. Even in this case, the deposition of at least one second sacrificial layer provides additional degrees of freedom, which may simplify the removal of at least one second reference mark from the sample.

[0101] At least one second reference distance may be greater than at least one first reference distance.

[0102] At least one second reference distance and at least one second reference mark are necessary to compensate for drift between the focused particle beam and at least one defect, given the deposition of the first sacrificial layer. Therefore, it is highly desirable that at least one second reference mark is not covered by the first sacrificial layer, thereby ensuring the functionality of the at least one second reference mark.

[0103] Furthermore, the method may include a step of compensating for drift while performing at least one element of the group consisting of generating a first sacrificial layer and removing a first portion of the first sacrificial layer covering at least one defect from at least one defect by using at least one second reference mark and at least one second reference distance.

[0104] The duration of the process can be optimized by depositing the first sacrificial layer as precisely as possible with respect to the defect to be repaired. For example, if it is possible to deposit the first sacrificial layer around the defect without substantially covering it, the etching process to remove a first portion of the first sacrificial layer for the purpose of exposing the defect prior to repair can be omitted.

[0105] This method may further include a step of jointly removing a first sacrificial layer and at least one first reference mark from a sample within the scope of a wet chemical cleaning process and / or a mechanical cleaning process.

[0106] An advantage of the methods described herein is that a standard cleaning process allows for the removal of at least one first reference mark along with the first sacrificial layer from the sample. Furthermore, these methods make it possible to match the material composition of the first sacrificial layer to the sample so that the first sacrificial layer can fully perform its various functions during the defect treatment process and can be easily removed from the sample at the end of the defect repair.

[0107] Furthermore, this method may include a step of integrally removing a first sacrificial layer, at least one first reference mark, and at least one second reference mark from the sample within the scope of a wet chemical cleaning process.

[0108] This method may additionally include a step of integrally removing a first sacrificial layer, at least one second sacrificial layer, at least one first reference mark, and at least one second reference mark from a sample within the scope of a wet chemical cleaning process and / or a mechanical cleaning process.

[0109] A wet chemical cleaning process can be carried out using water in which at least one oxidizing gas is dissolved. The oxidizing gas may contain at least one element from the group consisting of oxygen (O2), nitrogen (N2), and hydrogen (H2). Furthermore, the aqueous cleaning solution may have a pH value of less than 5, preferably less than 3.5, more preferably less than 2, and most preferably less than 1.

[0110] The mechanical cleaning process may include the application of ultrasound and / or extreme ultrasound. Cleaning can also be performed by applying physical force to the area of ​​the sample to be cleaned.

[0111] Furthermore, this method may include a step of integrally removing a first sacrificial layer and at least one first reference mark from the sample by a focused particle beam-induced etching process. Alternatively, the first sacrificial layer and at least one first reference mark may be removed using a particle beam (e.g., a photon beam).

[0112] The method may further include the step of integrally removing a first sacrificial layer, at least one first reference mark, and at least one second reference mark from the sample by an etching process induced by a focused particle beam.

[0113] The method may further include the step of integrally removing a first sacrificial layer, at least one second sacrificial layer, at least one first reference mark, and at least one second reference mark from a sample by an etching process induced by a focused particle beam.

[0114] It is also possible to remove at least one first reference mark and at least one second reference mark from a sample, along with a first sacrificial layer and / or at least one second sacrificial layer, by a local etching process induced by a focused particle beam. The focused particle beam used to generate the reference marks and / or sacrificial layers can be used as the focused particle beam for removing the first and / or second reference marks and the first and / or second sacrificial layers. Furthermore, the focused particle beam can be a particle beam used to perform defect processing. The material composition of the sacrificial layer may be selected from the viewpoint of simple removeability (e.g., simple etching of the sacrificial layer by the local particle beam-induced etching process). A preferred particle beam for the integrated removal of the sacrificial layer and reference marks includes an electron beam.

[0115] An advantage of the method described herein is that both the sacrificial layer and the reference mark can be generated using a single apparatus, which can be used simultaneously to treat at least one defect and remove the sacrificial layer along with the associated reference mark. This means that it is not necessary to break the vacuum of the apparatus throughout the entire defect repair process.

[0116] The sample may have at least one defect that is repaired using the method described above.

[0117] A computer program may include instructions that prompt the computer system to perform the method steps described above. A computer program can be stored in a computer-readable storage medium.

[0118] In one embodiment, an apparatus (200) for repairing at least one defect in a sample using a focused particle beam comprises means for generating at least one first sacrificial layer on the sample in proximity to the at least one defect in order to compensate for drift of the focused particle beam with respect to the at least one defect during the repair of the at least one defect.

[0119] In another embodiment, an apparatus for repairing at least one defect in a sample using a focused particle beam comprises means for generating at least one first conductive sacrificial layer on the sample to compensate for drift of the focused particle beam with respect to at least one defect during the repair of the at least one defect.

[0120] Means for generating a first sacrificial layer include means for generating a first locally conductive sacrificial layer.

[0121] This apparatus may further include an electron column having a single-stage condenser system.

[0122] The means for generating the first sacrificial layer may include at least one electron beam, and the apparatus may be configured to focus the electron beam to a diameter of less than 2 nm, with the kinetic energy of the electrons colliding with the sample (205, 300, 1500) being less than 3000 eV.

[0123] The means for generating the first sacrificial layer may include at least one electron beam, which may be configured to focus the electron beam to a diameter of less than 2 nm, with the kinetic energy of the electrons colliding with the sample (205, 300, 1500) being less than 1500 eV.

[0124] The means for generating the first sacrificial layer may include at least one electron beam, which may be configured to focus the electron beam to a diameter of less than 2 nm, with the kinetic energy of the electrons colliding with the sample (205, 300, 1500) being less than 1000 eV.

[0125] The means for generating the first sacrificial layer may include at least one electron beam, which may be configured to focus the electron beam to a diameter of less than 2 nm, with the kinetic energy of the electrons colliding with the sample (205, 300, 1500) being less than 800 eV.

[0126] The means for generating the first sacrificial layer may include at least one electron beam, which may be configured to focus the electron beam to a diameter of less than 2 nm, with the kinetic energy of the electrons colliding with the sample (205, 300, 1500) being less than 600 eV.

[0127] Minimizing the focal diameter of a focused electron beam involves reducing the area over which local processing processes, i.e., etching or deposition processes, act. If the minimum focal diameter is less than 2 nm, it becomes easy to achieve a minimum local processing area diameter of less than 10 nm. Furthermore, by using electrons with low kinetic energy for scanning at least one reference mark and processing at least one defect, damage to the sample by the focused particle beam can be minimized.

[0128] The localized processing area of ​​the focused particle beam in this device may have a minimum diameter of less than 10 nm.

[0129] The localized processing area of ​​the focused particle beam in this device may have a minimum diameter of less than 5 nm.

[0130] The localized processing area of ​​the focused particle beam in this device may have a minimum diameter of less than 4 nm.

[0131] The localized processing area of ​​the focused particle beam in this device may have a minimum diameter of less than 3 nm.

[0132] The localized processing area of ​​the focused particle beam in this device may have a minimum diameter of less than 2.5 nm.

[0133] The electron column may be configured to use a set of different apertures.

[0134] The apparatus may include a control device configured to control the beam current of an electron beam by selecting one of a set of apertures. The apparatus may also include a control device configured to determine a first reference distance and / or a second reference distance. Furthermore, the control device can be configured to specify a distance between at least one first reference mark and at least one defect, so that processing of at least one defect and scanning of at least one first reference mark can be performed without changing any parameters of the apparatus. Furthermore, the control device can be configured to determine one or more locations on a sample where one or more first reference marks should be generated. By knowing the focal diameter of the focused particle beam, the control device of the apparatus can determine the size of the first reference marks. The sizes of the first and second reference marks include, firstly, the area of ​​the reference marks and secondly, the height.

[0135] This device can be configured to perform the method steps of the method described above. Furthermore, this device can be designed as a computer system and may include the aforementioned computer program.

[0136] According to another exemplary embodiment of the present invention, the above problem is solved by the method described in Embodiment 1 and the apparatus described in Embodiment 19. In Embodiment 1, a method for repairing at least one defect in a sample using a focused particle beam includes the steps of (a) generating at least one first localized conductive sacrificial layer on the sample, the first localized conductive sacrificial layer having a first portion and at least one second portion, wherein the first portion is adjacent to the at least one defect and the first portion and at least one second portion are electrically connected to each other, and (b) generating at least one first reference mark on at least one second portion of the first localized conductive sacrificial layer to compensate for drift of the focused particle beam with respect to the at least one defect during the repair of the at least one defect.

[0137] Samples that are frequently repaired are either electrical insulators or possess semiconductor properties to a certain extent. Examples of the former group include photomasks or NIL stamped quartz substrates. Examples of the latter group include integrated circuits (ICs) produced on wafers. The particle beam can generate an electric charge in the sample when scanning a reference mark. This process can also occur when scanning the defect to be repaired. As a result, the local charge of the sample may differ during defect repair performed by drift correction.

[0138] In carrying out the method according to the present invention, the focused particle beam generates (exclusively) a charge in a first local conductive sacrificial layer. Due to the conductivity of the first sacrificial layer, the generated charge can be uniformly distributed throughout the first sacrificial layer. As a result, the charged particle beam expects substantially the same electrostatic potential when scanning reference marks and defects. This prevents various deflections of the charged particle beam when scanning over defects and reference marks, and consequently, various distortions in the image representation of reference marks and defects. This can improve the quality of drift correction and, consequently, the quality of the defect correction process.

[0139] Here, the expression "substantially," as elsewhere in this specification, refers to the specification of a measurement variable within the conventional error limits when using prior art metrology.

[0140] In this application, the expression "local sacrificial layer" means that the sacrificial layer does not extend throughout the entire sample. Rather, the first sacrificial layer may be deposited around a defect, or on or around the defect, in whole or in part, by a local particle beam-induced deposition process. For example, the lateral range of the local sacrificial layer can be less than 1 mm, less than 500 μm, or less than 100 μm.

[0141] In the first conductive sacrificial layer, both the first portion and at least one second portion are conductive. The conductivity of the first portion, at least one second portion, and the connections between the first portion and at least one second portion can be the same or slightly different. In this application, the term "electrically conductive" means that the specific electrical resistivity of the sacrificial layer is on the order of a metal conductor, i.e., ρ < 1 Ω·cm.

[0142] The proximity of the first part to at least one defect may include at least one element of the group consisting of proximity of the first part to the edge of at least one defect, partial coverage of at least one defect by the first part, and complete coverage of at least one defect by the first part.

[0143] By framing the defect at the start of the repair process, the charged particle beam "expects" substantially the same electrostatic potential when scanning at least one first reference mark and the defect to be repaired. Furthermore, the framing of the defect by the first sacrificial layer can effectively protect the sample from the effects of the repair process. For example, deposited material may unintentionally deposit on the first sacrificial layer around the defect. In addition, while a local etching process is being performed for the purpose of repairing the sample, the first sacrificial layer framing the defect of excess material to be repaired protects the area of ​​the sample around the defect.

[0144] Once the repair process is complete, the first sacrificial layer can be removed from the sample along with the deposited material on the first sacrificial layer. As a result, by performing the method according to the present invention, defect correction with substantially no residue is facilitated, and consequently, improvements in drift correction and the quality of the defect repair process are further promoted.

[0145] The proximity of the first portion to the edge of at least one defect may include the proximity of the first portion to the entire edge of at least one defect. This embodiment is particularly advantageous when the defect on the sample is isolated.

[0146] This method may further include the step of determining at least one first reference distance between at least one first reference mark and at least one defect, before repair of at least one defect is initiated.

[0147] By using at least one first reference distance in combination with at least one first reference mark, the drift of at least one defect relative to the focused particle beam can be compensated for in the defect repair process.

[0148] The first part may have a lateral range around at least one defect such that repairing at least one defect does not substantially damage the sample.

[0149] The first portion of the first sacrificial layer represents a protective layer during the defect processing or defect repair process. The latter may be adapted, firstly, to the dimensions of the defect to be repaired and the focal diameter of the particle beam used for repair, and secondly, to the type of defect repair performed. In the above context, the expression "substantially" means that any damage to the functionality of the sample as a result of the repair process performed cannot be demonstrated after the defect repair.

[0150] Defect repair is preferably performed within the field of view of the focused particle beam. This embodiment is advantageous in that it does not require modification of the parameters of the device providing the particle beam for the purpose of scanning a first reference mark during the repair process. This allows for the best possible correction of drift. As an example, the field of view of the scanning particle microscope may include an area of ​​1000 μm × 1000 μm, preferably 100 μm × 100 μm, more preferably 10 μm × 10 μm, and most preferably 6 μm × 6 μm.

[0151] Furthermore, the lateral dimensions of the first sacrificial layer can exceed the field of view of the focused particle beam. For example, this can occur when the defect to be repaired is large. The first portion may have a lateral range extending around the edge of at least one defect over a range of 1 nm to 1000 μm, preferably 2 nm to 200 μm, more preferably 5 nm to 40 μm, and most preferably 10 nm to 10 μm.

[0152] The thickness of the first portion may be in the range of 0.1 nm to 1000 nm, preferably 0.5 nm to 200 nm, more preferably 0.5 nm to 200 nm, and most preferably 2 nm to 50 nm.

[0153] The step of generating at least one reference mark may include generating at least one first reference mark at a certain distance from at least one defect such that repairing at least one defect does not substantially affect the drift correction.

[0154] This feature ensures that the structure of the first reference mark remains substantially unchanged throughout the processing. Therefore, the function of the first reference mark is maintained without limitations throughout the entire restoration process.

[0155] The step of generating at least one first reference mark may include generating the at least one first reference mark at a distance from at least one defect such that repairing at least one defect does not substantially alter the at least one first reference mark.

[0156] A first reference mark, used to correct drift during a defect repair process and applied in the immediate vicinity of the defect being repaired, may be altered by the repair process, potentially impairing its function as a means of drift correction. Firstly, material may be deposited on the first repair mark during a local deposition process, and secondly, the structure of the first reference mark may be altered by the repair process, in the form of an etching process. The method of the present invention allows for the application of the first reference mark at a distance from the defect being repaired, at which distance the repair process does not substantially alter at least one of the first reference marks.

[0157] At least one first reference mark may have a lateral range of 1 nm to 1000 nm, preferably 2 nm to 500 nm, more preferably 5 nm to 100 nm, and most preferably 10 nm to 50 nm. Furthermore, the condition that the lateral range of the reference mark does not exceed the field of view of the scanning particle microscope gives rise to another requirement regarding the maximum range of the reference mark.

[0158] At least one first reference mark may have a height in the range of 1 nm to 1000 nm, preferably 2 nm to 500 nm, more preferably 5 nm to 200 nm, and most preferably 10 nm to 100 nm.

[0159] The first sacrificial layer may have a lateral range determined by the lateral range of the first part and the number of at least one second part.

[0160] The first portion and at least one second portion may be interconnected in the same plane. The coplanar connection between the first portion and one or more second portions requires the maximum cost to deposit the corresponding first sacrificial layer. And in this case as well, due to the large capacitance of the large area first sacrificial layer, the electrostatic potential of the first sacrificial layer changes only slightly even by scanning and / or charging by a focused particle beam of at least one reference mark during defect repair.

[0161] The conductive connection between the first portion and at least one second portion may have a width in the range of 0.1 nm to 1000 μm, preferably 20 nm to 100 μm, more preferably 30 nm to 10 μm, and most preferably 40 nm to 3 μm.

[0162] The thickness of the conductive connection between the first portion and at least one second portion may be in the range of 0.1 nm to 1000 nm, preferably 0.5 nm to 200 nm, more preferably 1 nm to 100 nm, and most preferably 2 nm to 50 nm.

[0163] The connection of the first part and at least one second part in the form of a conductive connection is considered convenient when the first part and at least one second part are at different levels. For example, the first part may be located on the substrate of the photomask and at least one second part may be located on the pattern element of the photomask.

[0164] A focused particle beam may include at least one element from the group consisting of photon beams, electron beams, ion beams, atomic beams, and molecular beams. The photon beam may include photon beams in the ultraviolet (UV), deep ultraviolet (DUV), or extreme ultraviolet (EUV) wavelength range.

[0165] The focused particle beam preferably includes a focused electron beam and / or a focused ion beam. Since electron and ion beams can be focused to much smaller spots than photon beams, the spatial resolution during defect repair can be easily increased. Furthermore, electron and ion beams are easier to generate and image than atomic or molecular beams.

[0166] Scanning a sample with a focused particle beam can cause damage to the scanned area of ​​the sample. The extent of the damage depends on the type of particle beam. For example, ion beams, atomic beams, or molecular beams can cause significant damage to the scanned area as a result of large-scale momentum transfer from the more massive particles to the sample grating. Furthermore, some of the particles from the ion beam, atomic beam, or molecular beam may be incorporated into the sample grating, resulting in localized changes in its properties (e.g., its optical properties).

[0167] In contrast, electron beams, due to their low electron mass, typically cause only minimal damage to the sample's scanning area. As a result, using electrons for defect repair facilitates sample defect treatment without significant side effects. Therefore, in principle, the use of electrons is preferred over the use of ions in focused particle beams.

[0168] At least one second portion may extend across the entire scanning region of the focused particle beam for detecting at least one first reference mark.

[0169] While determining the position of at least one first reference mark, at least a majority of the particles of the focused particle beam may be incident on at least one second portion of the first sacrificial layer. The lateral range of at least one second portion may exceed the scanning area of ​​the focused particle beam for scanning at least one first reference mark, and is 1.2 times, preferably 1.5 times, more preferably 2 times, and most preferably 3 times.

[0170] The fact that at least one second portion around at least one first reference mark is larger by a specified factor than the scanning region scanned by the focused particle beam for the purpose of determining the position of at least one first reference mark ensures that the scanning of at least one first reference mark is substantially complete on the first sacrificial layer, even when the drift of the focused particle beam over defects is significant. This prevents uncontrollable localization of charge carriers in the sample.

[0171] An additional degree of freedom is gained by attaching at least one first reference mark to the first sacrificial layer, rather than directly depositing it on the sample. This allows the first sacrificial layer to be designed to be easily and substantially completely removed from the sample at the end of the sample processing process. Without this constraint, at least one first reference mark can be designed to withstand both multiple determinations of the position of the first reference mark and one or more extended processing processes of the sample that are substantially unchanged.

[0172] As an example, the area of ​​at least one second portion of the deposited first sacrificial layer can be square or rectangular. The lateral dimension is related to the shorter side of the rectangle. The area of ​​at least one second portion can be adapted to the area of ​​the scanning region of at least one focused particle beam.

[0173] The lateral range of at least one second portion may have a lateral dimension in the range of 10 nm to 1000 μm, preferably 50 nm to 500 μm, more preferably 200 nm to 100 μm, and most preferably 500 nm to 50 μm.

[0174] The thickness of at least one second portion may be in the range of 0.1 nm to 1000 nm, preferably 0.5 nm to 200 nm, more preferably 1 nm to 100 nm, and most preferably 2 nm to 50 nm.

[0175] The step of generating a first sacrificial layer may include depositing the first sacrificial layer with a focused particle beam in combination with at least one first precursor gas. The focused particle beam may include an electron beam.

[0176] The at least one first precursor gas may include at least one first deposit gas for depositing a first portion of the first sacrificial layer, at least one second deposit gas for depositing at least one second portion of the first sacrificial layer, and at least one third deposit gas for depositing conductive connections in the first sacrificial layer. The at least one first deposit gas, at least one second deposit gas, and at least one third deposit gas may include a single deposit gas, two different deposit gases, or three different deposit gases. The various functions of the first portion, one or more second portions, and conductive connections can be optimized by material compositions adapted to each.

[0177] At least one first precursor gas may contain molybdenum hexacarbonyl (Mo(CO)6) and nitrogen dioxide (NO2) as additive gases, and / or the first precursor gas may contain chromium hexacarbonyl (Cr(CO)6).

[0178] The step of generating at least one first reference mark may include depositing at least one first reference mark using a focused particle beam in combination with at least one second precursor gas. The focused particle beam for depositing at least one first reference mark may include an electron beam.

[0179] The first sacrificial layer and at least one first reference mark can be deposited using one particle beam or different particle beams. For example, the first sacrificial layer may be deposited using an electron beam and at least one second reference mark may be deposited using an ion beam.

[0180] At least one first precursor gas for depositing the first sacrificial layer may contain at least one element from the group consisting of metallic alkyls, transition element alkyls, main group alkyls, metallic carbonyls, transition element carbonyls, main group carbonyls, metallic alkoxides, transition element alkoxides, main group alkoxides, metal complexes, transition element complexes, main group complexes, and organic compounds.

[0181] The at least one second precursor gas for depositing at least one reference mark may contain at least one element from the group consisting of metallic alkyls, transition element alkyls, main group alkyls, metallic carbonyls, transition element carbonyls, main group carbonyls, metallic alkoxides, transition element alkoxides, main group alkoxides, metal complexes, transition element complexes, main group complexes, and organic compounds.

[0182] Metallic alkyls, transition element alkyls, and main group alkyls may contain at least one element from the group consisting of cyclopentadienyl (Cp)trimethylplatinum (CpPtMe3), methylcyclopentadienyl (MeCp)trimethylplatinum (MeCpPtMe3), tetramethyltin (SnMe4), trimethylgallium (GaMe2), ferrocene (Co2Fe), and bisarylchromium (Ar2Cr). Metallic carbonyls, transition element carbonyls, and main group carbonyls may contain chromium hexacarbonyl (Cr(CO)6), molybdenum hexacarbonyl (Mo(CO)6), tungsten hexacarbonyl (W(CO)6), dicobalt octacarbonyl (Co2(CO)8), tolthenium dodecacarbonyl (Ru3(CO) 12They may contain at least one element from the group consisting of ), and iron pentacarbonyl (Fe(CO)5). Metal alkoxides, transition element alkoxides, and main group alkoxides may contain at least one element from the group consisting of tetraethyl orthosilicate (TEOS, Si(OC2H5)4) and tetraisopropoxytitanium (Ti(OC3H7)4). Metal halides, transition element halides, and main group halides may contain at least one element from the group consisting of tungsten hexafluoride (WF6), tungsten hexachloride (WCl6), titanium hexachloride (TiCl6), boron trichloride (BCl3), and silicon tetrachloride (SiCl4). The metal complex, transition element complex, and main group complex may contain at least one element from the group consisting of copper bis(hexafluoroacetylacetonate) (Cu(C5F6HO2)2) and dimethyl gold trifluoroacetylacetonate (Me2Au(C5F3H4O2)). The organic compound may contain at least one element from the group consisting of carbon monoxide (CO), carbon dioxide (CO2), aliphatic hydrocarbons, aromatic hydrocarbons, components of vacuum pump oil, and volatile organic compounds.

[0183] The step of generating at least one first reference mark may include etching at least one depression in at least one second portion of the first sacrificial layer. Etching at least one depression may include performing a local etching process using a focused particle beam in combination with at least one third precursor gas. The focused particle beam may include an electron beam and / or an ion beam.

[0184] At least one third precursor gas may contain at least one etching gas. At least one etching gas may contain at least one element from the group consisting of halogen-containing compounds and oxygen-containing compounds. The halogen-containing compound may contain at least one element from the group consisting of fluorine (F2), chlorine (Cl2), bromine (Br2), iodine (I2), xenon difluoride (XeF2), dixenon tetrafluoride (Xe2F4), hydrofluoric acid (HF), hydrogen iodide (HI), hydrogen bromide (HBr), nitrosyl chloride (NOCl), phosphorus trichloride (PCl3), phosphorus pentachloride (PCl5), and phosphorus trifluoride (PF3). The oxygen-containing compound may contain at least one element from the group consisting of oxygen (O2), ozone (O3), water vapor (H2O), hydrogen peroxide (H2O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), and nitric acid (HNO3).

[0185] At least one first precursor gas, at least one second precursor gas, and / or at least one third precursor gas may include at least one additive gas from the group consisting of oxidizing agents, halides, and reducing agents.

[0186] The oxidizing agent may contain at least one element from the group consisting of oxygen (O2), ozone (O3), water vapor (H2O), hydrogen peroxide (H2O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), and nitric acid (HNO3). The halide may contain at least one element from the group consisting of chlorine (Cl2), hydrochloric acid (HCl), xenon difluoride (XeF2), hydrofluoric acid (HF), element (I2), hydrogen iodide (HI), bromine (Br2), hydrogen bromide (HBr), nitrosyl chloride (NOCl), phosphorus trichloride (PCl3), phosphorus pentachloride (PCl5), and phosphorus trifluoride (PF3). The reducing agent may contain at least one element from the group consisting of hydrogen (H2), ammonia (NH3), and methane (CH4).

[0187] The first precursor gas may contain molybdenum hexacarbonyl (Mo(CO)6), at least one additive gas may contain nitrogen dioxide (NO2), and / or the second precursor gas may contain tetraethyl orthosilicate (Si(OC2H5)4) or chromium hexacarbonyl (Cr(CO)6).

[0188] The method described above may further include the step of removing a portion of the first sacrificial layer covering at least one defect before repairing at least one defect.

[0189] The step of removing a first portion of a first sacrificial layer covering at least one defect may include performing a particle beam-induced etching process using at least one fourth precursor gas. The at least one fourth precursor gas may include at least one second etching gas. The at least one second etching gas may include at least one element of the group of first etching gases listed above. The first deposition gas for depositing the first portion of the sacrificial layer may include elements of the group consisting of chromium hexacarbonyl (Cr(CO)6) and molybdenum hexacarbonyl (Mo(CO)6), and the at least one second etching gas for removing the first portion of the sacrificial layer may include nitrosyl chloride (NOCl) itself or a combination with at least one additive gas (e.g., water (H2O)).

[0190] The precursor gas for etching at least one first reference mark onto at least one second portion of the first sacrificial layer may include xenon difluoride (XeF2) in combination with an additive gas (e.g., oxygen (O2), water (H2O), or chlorine (Cl2). Alternatively, for example, nitrosyl chloride (NOCl) itself or in combination with an additive gas (e.g., water (H2O)) may be used to generate the first reference mark.

[0191] At least one defect may include a defect in excess material, and the method may further include a step of repairing at least one defect by at least partially passing through the first sacrificial layer.

[0192] A first sacrificial layer, or a first portion of the first sacrificial layer, which extends partially or entirely over the entire defect in the excess material to be repaired, may be removed from the sample in a single process step, for example, using a local particle beam-induced etching process. In this case, if the etching rate of the defect and the etching rate of the material in the first portion of the first sacrificial layer differ significantly from each other, the etching gas and / or additive gas may be adapted to the progress of the etching process. Furthermore, other beam parameters of the particle beam and / or other process parameters may also be adapted to the progress of the etching process. The progress of the local etching process may be determined by analyzing the backscattered or secondary electrons generated during the etching process. As an addition or alternative, the removed material may be analyzed, for example, by SIMS (Secondary Ion Mass Spectroscopy) analysis. For this reason, it is preferable that an ion beam be used as the particle beam. Furthermore, the etching rate may be calibrated by separate optimization of the etching processes for the sacrificial layer and the material to be removed. As an example, this may be done by executing an etching sequence.

[0193] The first portion of the first sacrificial layer and at least one second portion may have a lateral range such that the image cross-section containing at least one defect is distorted by 10% or less, preferably 5% or less, more preferably 2% or less, and most preferably 1% or less, by the operation to repair at least one defect. The operation to repair defects with a focused particle beam may cause the conductive sacrificial layer to become charged. When the sacrificial layer becomes charged, distortion of the image cross-section containing the defect or defect residue may occur. The distortion of the image cross-section is related to the image cross-section before the start of the repair process.

[0194] The charging of the sacrificial layer can have a local effect on the imaging parameters of the focused particle beam, which may result in local variations in those parameters. As a result of these local variations (e.g., local variations in the magnification of the image produced by the scanning focused particle beam), the image will be distorted compared to an image where the imaging parameters (e.g., magnification) are not locally varied.

[0195] The first part, at least one second part, and the conductive connection may have a material composition comprising at least one element from the group consisting of metals, metal-containing compounds, conductive ceramics, and doped semiconductor compounds.

[0196] The metal may contain at least one element from the group consisting of molybdenum, cobalt, chromium, niobium, tungsten, rhenium, ruthenium, and titanium. The metal-containing compound may contain at least one element from the group consisting of molybdenum alloys, cobalt-containing compounds, chromium-containing compounds, niobium-containing compounds, tungsten-containing compounds, rhenium-containing compounds, and titanium-containing compounds. The metal-containing compound may contain elements from the group consisting of nitrogen, oxygen, fluorine, chlorine, carbon, and silicon. The doped semiconductor compound may contain at least one element from the group consisting of indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), antimond-doped tin oxide (ATO), and fluorine-doped tin oxide (FTO). The conductive ceramic may contain molybdenum silicide.

[0197] The first part, at least one second part, and the conductive connections may have different material compositions.

[0198] The first sacrificial layer and at least one first reference mark may have different material compositions.

[0199] As a result, when scanning at least one first reference mark, differences in the topology of the first reference mark occur, as well as differences in material between at least one second portion of the first sacrificial layer and at least one first reference mark.

[0200] At least one defect may include a defect of excess material, and the operation to repair at least one defect may include selecting the material composition of a first portion of the first sacrificial layer, at least one second etching gas, and / or at least one additive gas, such that the etching rate of the etching process induced by the focused particle beam is substantially the same for at least one defect and the first portion.

[0201] By satisfying this condition, the curvature of the edges of the etched region that occurs in the case of localized etching of defects can be minimized. Furthermore, under-etching of the sample within the scope of defect correction can be avoided. At the same time, observing this condition makes it easier to maximize the steepness of the sidewalls of the etched region of the sample.

[0202] The sample may include a lithography sample. The lithography sample may include at least one element from the group consisting of a photomask and a stamp for nanoimprint lithography (NIL). However, the sample may also include at least one element from the group consisting of a photomask, a stamp for NIL, an integrated circuit (IC), a photonic integrated circuit (PIC), a microsystem (MEMS (microelectromechanical system) or MOEMS (micro-optical electromechanical system)), and a printed circuit board (PCB). The integrated circuit and / or photonic integrated circuit may be placed on a wafer. The photomask may be any type of transmission or reflection photomask (e.g., a binary or phase-shift mask).

[0203] This method may further include the step of generating a defect map of the sample by scanning the sample with a focused particle beam.

[0204] The step of scanning the sample may include scanning at least one defect in the sample using a focused particle beam. The focused particle beam for scanning the sample may include a particle beam used to generate a first sacrificial layer, generate at least one first reference mark, and / or initiate a localized defect processing process. However, within the scope of the sample scanning, it is also possible to use a first particle beam (e.g., a photon beam) to identify at least one defect and a second particle beam (e.g., an electron beam) to detect the contour of the repair shape of at least one defect.

[0205] The apparatus performing the above-described method may receive the coordinates of at least one defect in the sample from the sample inspection apparatus. The defect map of the sample may include at least one defect in the sample. In particular, the defect map may include a repair shape for repairing at least one defect.

[0206] The method may further include the steps of generating at least one second reference mark on a sample and determining at least one second reference distance between the at least one second reference mark and at least one defect before the start of generation of the first sacrificial layer.

[0207] Furthermore, this method may include the steps of generating at least one second sacrificial layer on a sample, depositing at least one second reference mark on at least one second sacrificial layer, and determining at least one second reference distance between at least one second reference mark and at least one defect before the start of generation of the first sacrificial layer.

[0208] At least one second reference mark is required to compensate for drift during the deposition of the first sacrificial layer. Furthermore, at least one second reference mark is required to compensate for drift during the removal of the first portion of the first sacrificial layer covering at least one defect. Therefore, for process economic reasons, it may be advantageous to omit the deposition of at least one second sacrificial layer and apply the second reference mark directly to the sample. Even in this case, the deposition of at least one second sacrificial layer provides additional degrees of freedom, which may simplify the removal of at least one second reference mark from the sample.

[0209] At least one second reference distance may be greater than at least one first reference distance.

[0210] At least one second reference distance and at least one second reference mark are necessary to compensate for drift between the focused particle beam and at least one defect, given the deposition of the first sacrificial layer. Therefore, it is highly desirable that at least one second reference mark is not covered by the first sacrificial layer, thereby ensuring the functionality of the at least one second reference mark.

[0211] Furthermore, the method may include a step of compensating for drift while performing at least one element of the group consisting of generating a first sacrificial layer and removing a first portion of the first sacrificial layer covering at least one defect from at least one defect by using at least one second reference mark and at least one second reference distance.

[0212] The duration of the process can be optimized by depositing the first sacrificial layer as precisely as possible with respect to the defect to be repaired. For example, if it is possible to deposit the first sacrificial layer around the defect without substantially covering it, the etching process to remove a first portion of the first sacrificial layer for the purpose of exposing the defect prior to repair can be omitted.

[0213] This method may further include the step of integrally removing a first sacrificial layer and at least one first reference mark from a sample within the scope of a wet chemical cleaning process and / or a mechanical cleaning process.

[0214] An advantage of the method described herein is that a standard cleaning process allows for the removal of at least one first reference mark along with the first sacrificial layer from the sample. Furthermore, this method makes it possible to match the material composition of the first sacrificial layer to the sample so that the first sacrificial layer can fully perform its various functions during the defect treatment process and can be easily removed from the sample at the end of defect repair.

[0215] Furthermore, this method may include a step of integrally removing a first sacrificial layer, at least one reference mark, and at least one first reference mark from a sample within the scope of a wet chemical cleaning process.

[0216] This method may additionally include a step of integrally removing a first sacrificial layer, at least one second sacrificial layer, at least one first reference mark, and at least one second reference mark from a sample within the scope of a wet chemical cleaning process and / or a mechanical cleaning process.

[0217] A wet chemical cleaning process can be carried out using water in which at least one oxidizing gas is dissolved. The oxidizing gas may contain at least one element from the group consisting of oxygen (O2), nitrogen (N2), and hydrogen (H2). Furthermore, the aqueous cleaning solution may have a pH value of less than 5, preferably less than 3.5, more preferably less than 2, and most preferably less than 1.

[0218] The mechanical cleaning process may include the application of ultrasound and / or extreme ultrasound. Cleaning can also be performed by applying physical force to the area of ​​the sample to be cleaned.

[0219] Furthermore, this method may include a step of integrally removing a first sacrificial layer and at least one first reference mark from the sample by a focused particle beam-induced etching process. Alternatively, the first sacrificial layer and at least one first reference mark may be removed using a particle beam (e.g., a photon beam).

[0220] The method may further include the step of integrally removing a first sacrificial layer, at least one first reference mark, and at least one second reference mark from the sample by an etching process induced by a focused particle beam.

[0221] The method may further include the step of integrally removing a first sacrificial layer, at least one second sacrificial layer, at least one first reference mark, and at least one second reference mark from a sample by an etching process induced by a focused particle beam.

[0222] It is also possible to remove at least one first reference mark and at least one second reference mark from a sample, along with a first sacrificial layer and / or at least one second sacrificial layer, by a local etching process induced by a focused particle beam. The focused particle beam used to generate the reference marks and / or sacrificial layers can be used as the focused particle beam for removing the first and / or second reference marks and the first and / or second sacrificial layers. Furthermore, the focused particle beam can be a particle beam used to perform defect processing. The material composition of the sacrificial layer may be selected from the viewpoint of simple removeability (e.g., simple etching of the sacrificial layer by the local particle beam-induced etching process). A preferred particle beam for the integrated removal of the sacrificial layer and reference marks includes an electron beam.

[0223] An advantage of the method described herein is that both the sacrificial layer and the reference mark can be generated using a single apparatus, which can be used simultaneously to treat at least one defect and remove the sacrificial layer along with the associated reference mark. This means that it is not necessary to break the vacuum of the apparatus throughout the entire defect repair process.

[0224] The sample may have at least one defect that is repaired using the method described above.

[0225] A computer program may include instructions that prompt a computer system to perform the method steps described above. A computer program can be stored in a computer-readable storage medium.

[0226] In Embodiment 19, an apparatus for repairing at least one defect in a sample using a focused particle beam comprises: (a) means for generating at least one first localized conductive sacrificial layer on the sample, the first localized conductive sacrificial layer having a first portion and at least one second portion, the first portion being adjacent to at least one defect, and the first portion and at least one second portion being electrically connected to each other; and (b) means for generating at least one first reference mark on at least one second portion of the first localized conductive sacrificial layer to compensate for drift of the focused particle beam with respect to at least one defect under repair.

[0227] The means for generating the first sacrificial layer may include at least one electron beam, and the apparatus can be configured to focus the electron beam to a diameter of less than 2 nm when the kinetic energy of the electrons colliding with the sample is less than 3000 eV, preferably less than 2000 eV, more preferably less than 1000 eV, and most preferably less than 600 eV.

[0228] Minimizing the focal diameter of a focused electron beam involves reducing the area over which local processing processes, i.e., etching or deposition processes, act. If the minimum focal diameter is less than 2 nm, the minimum diameter of the local processing area becomes less than 10 nm. Furthermore, by using electrons with low kinetic energy for scanning at least one reference mark and processing at least one defect, damage to the sample by the focused particle beam can be minimized.

[0229] This device can be configured to perform the method steps of the method described above. Furthermore, this device can be designed as a computer system and may include the aforementioned computer program.

[0230] The apparatus may include an electron column having a single-stage condenser system. Furthermore, the electron column may be configured to use a set of different apertures. The beam current can be controlled by the selection of apertures. The single-stage condenser system may be configured to focus low-kinetic-energy electrons into a small spot. The working distance between the output of the electron column and the sample can be less than 5 mm, preferably less than 4 mm, more preferably less than 3 mm, and most preferably less than 2.5 mm.

[0231] The apparatus may include a control device configured to determine a first reference distance and / or a second reference distance. Furthermore, the control device may be configured to specify a distance between at least one first reference mark and at least one defect, so that processing of at least one defect and scanning of at least one first reference mark can be performed without any change in the parameters of the apparatus. Furthermore, the control device may be configured to determine one or more locations on a sample where one or more first reference marks should be generated. By knowing the focal diameter of the focused particle beam, the control device of the apparatus can determine the size of the first reference marks. The size of the first and second reference marks includes, firstly, the area of ​​the reference marks and secondly, the height.

[0232] The following detailed description, with reference to the drawings, describes currently preferred exemplary embodiments of the present invention. [Brief explanation of the drawing]

[0233] [Figure 1a] This is a schematic cross-sectional view of a sample local defect treatment process in the form of a particle beam-induced etching process according to the prior art. [Figure 1b] This figure reproduces the results of the defect processing process shown in Figure 1a. [Figure 2] This is a schematic block diagram showing some key components of a device that can be used for high-precision repair of defects in samples. [Figure 3a] This is a schematic plan view showing a cross-section of the photomask substrate, indicating a defect, four second sacrificial layers, four second reference marks associated with the scanning region of the focused particle beam, and four second reference distances between the second reference marks and the defect. [Figure 3b] This figure shows an improvement over Figure 3a, where the reference marks are deposited directly onto the substrate or pattern elements of the photomask. [Figure 4] This figure reproduces a cross-section of Figure 3a showing a first exemplary embodiment of a deposited first sacrificial layer having a first portion covering the defect and a second portion on which four first reference marks are generated. [Figure 5] This figure reproduces a cross-section of Figure 3a showing a second exemplary embodiment of a deposited sacrificial layer, which has a first portion covering the defect and its surroundings, and four second portions on which first reference marks are deposited. [Figure 6] This figure reproduces Figure 5 after defects have been exposed by performing a localized particle beam-induced etching process on a first portion of the first sacrificial layer. [Figure 7] This figure reproduces Figure 6, with the addition of a first reference distance between the first reference mark and the defect to be clarified. [Figure 8] Figure 7 shows the end of the defect handling process. [Figure 9]This figure shows the repaired cross section of Figure 3a after the removal of the first sacrificial layer and the four second sacrificial layers, along with the four related first and four second reference marks. [Figure 10] This figure shows a cross-section of a stamp for nanoimprint lithography with a first thick sacrificial layer on which a particle beam-induced etching process is performed. [Figure 11] This figure shows Figure 10 with a second thin sacrificial layer. [Figure 12] Figures 10 and 11 show measured data relating to the width or diameter of depressions generated at a depth corresponding to 10% of the nominal depth as a function of etching depth, for the particle beam-induced etching process and the comparative process without a sacrificial layer. [Figure 13] This figure reproduces Figure 12, showing the diameter of the etched recess measured at 50% of the nominal etching depth. [Figure 14] Figures 10 and 11 show measurement data related to the sidewall angles of the etching process and the comparative process without a sacrificial layer. [Figure 15] This figure shows the results of a particle beam-induced etching process of an NIL stamp through a sacrificial layer, in which the sacrificial layer is etched at a rate greater than that of the stamp material. [Figure 16] This figure repeats Figure 15, where the etching rate of the sacrificial layer is less than the etching rate of the stamp material. [Figure 17] This figure repeats Figure 15, where the etching rates of the sacrificial layer and the stamp are substantially the same. [Figure 18] This diagram reproduces a flowchart of a method for repairing at least one defect in a sample. [Modes for carrying out the invention]

[0234] The following describes currently preferred embodiments of the method and apparatus according to the present invention for repairing samples. The method is described with reference to photomasks and stamps for nanoimprint lithography (NIL). Furthermore, the apparatus according to the present invention is described using an example of an improved scanning electron microscope that can be used for repairing defects in photolithography masks or templates for NIL.

[0235] However, the methods and apparatus according to the present invention are not limited to the examples described below. Those skilled in the art will readily recognize that, instead of the scanning electron microscope discussed, any scanning particle microscope using, for example, a focused ion beam and / or a focused photon beam can be employed as an energy source for initiating the local deposition process and / or etching process. Furthermore, the methods according to the present invention are not limited to the use of samples in the form of photomasks and NIL stamps, as discussed below as examples. Rather, they can be used to repair any embodiment of the samples illustrated in Section 3 above.

[0236] Figure 1a is a schematic cross-sectional view of a prior art repair process for a defect 120 in a sample 100. In the example shown in Figure 1a, sample 100 includes a wafer 100 from which an insufficient depression is intended to be etched. That is, sample 100 has a defect 120 of excess material. Two reference marks 160 are deposited on sample 100 for the purpose of controlling the drift of a focused particle beam 130 over sample 100 during the etching process to generate the depression. To protect sample 100 from damage that occurs when the particle beam 130 scans the reference marks 160, the reference marks 160 are deposited on a sacrificial layer 140. In the art, the reference marks 160 are referred to as DC (drift correction) marks.

[0237] When scanning sample 100 using a particle beam, a charge that generates an electrostatic potential φ1 may be generated on the surface of sample 100. Similarly, when scanning reference mark 160 using a particle beam 130, a charge that can generate a charge φ2 of sacrificial layer 140 may be generated or injected into sacrificial layer 140. When sacrificial layer 140 is charged, a first deflection of the charged particle beam 130 (e.g., electron beam 130) occurs when scanning sample 100, and a second deflection of the beam occurs when scanning sacrificial layer 140 or reference mark 160.

[0238] The problem of local charge φ2 of the sample 100 also occurs when scanning the defect 120 using the focused particle beam 130 and when performing a particle beam-induced etching process aimed at correcting the defect 120. Typically, the charge φ2 of the sacrificial layer 140 is different from the local charge φ1 of the sample 100. Therefore, when scanning the sample 100 in the region of the defect 120, the charged particle beam 130 is deflected differently than when scanning the sacrificial layer 140 for the purpose of detecting the reference mark 160.

[0239] Figure 1b schematically shows the results of the defect repair process in Figure 1a. Firstly, the edges 170 of the sample 100 around the repaired defect 120 are rounded 180° due to the effect of the particle beam-induced local etching process performed for defect correction on the edges 170 around the defect 120. Secondly, the sidewall angle 190 generated by the defect repair differs significantly from the specified sidewall angle of 90°.

[0240] The apparatus 200 described below can improve the results of the repair process compared to Figure 1b. Figure 2 schematically shows the essential components of the apparatus 200 that can be used for the analysis and / or repair of sample 205. Sample 205 may be any microstructure component or structural part. For example, sample 205 may include a transmission photomask, reflective photomask, or template for NIL. Furthermore, the apparatus 200 may be used for the analysis and / or repair of integrated circuits (ICs), microscopic systems (MEMS, MOEMS), and / or photonic integrated circuits (PICs), for example. In the examples described below, sample 205 is a photolithography mask or an NIL stamp.

[0241] The exemplary apparatus 200 in Figure 2 is an improved scanning electron microscope (SEM). Once the electron gun 215 generates an electron beam 227, the beam shaping element 220 and beam deflection element 225 guide it as a focused electron beam 227 to the sample 205 placed on the sample stage 210.

[0242] The beam shaping element 220 comprises a single-stage capacitor system 218. The single-stage capacitor system 218 facilitates the generation of a focused electron beam 227 on the sample 205 with a very small spot diameter (D < 2 nm), while simultaneously lowering the kinetic energy of the electrons in the electron beam 227 on the sample 205 (E < 1 keV). Because the SEM generates a small spot diameter on the sample 205, the working distance from the sample 205 is short. The working distance may have dimensions of less than 3 mm. Low-energy electrons facilitate the processing of the sample 205 with very high spatial resolution and virtually no damage. However, due to the low kinetic energy of the electrons in the electron beam 227, the electron beam is particularly susceptible to unwanted deflection due to the charge φ2 of the sample 100 and / or the charge φ1 of the sacrificial layer 160. This problem is avoided by the measures described in the following drawings.

[0243] Furthermore, the beam shaping element 220 is equipped with a set of different apertures. The beam current of the electron beam 227 is controlled by selecting an appropriate aperture.

[0244] The sample stage 210 has a micromanipulator (not shown in Figure 2) which allows the defect site 120 on the sample 205 to be moved directly below the incident point of the electron beam 229 on the sample 205. The sample stage 210 can also be displaced in the height direction, i.e., in the beam direction of the electron beam 227, so that the focal point of the electron beam 227 is on the surface of the sample 205 (similarly not shown in Figure 2). Furthermore, the sample stage 210 may be equipped with a device for temperature setting and temperature control that can maintain the sample 205 at a specified temperature (not shown in Figure 2).

[0245] The apparatus 200 in Figure 2 uses an electron beam 227 as an energy source 215 to initiate a localized chemical reaction on the sample 205. As described above, electrons incident on the surface of the sample 205 cause less damage to the sample 205 compared to, for example, an ion beam, even when their individual kinetic energies vary over a wide energy range. However, the apparatus 200 and method presented herein are not limited to the use of an electron beam 227. Rather, any desired particle beam 227 capable of locally inducing a chemical reaction of the precursor gas at the incident point 229 of the electron beam 227 on the surface of the sample 205 can be used. Examples of alternative particle beams include ion beams, atomic beams, molecular beams, and / or photon beams. Furthermore, two or more particle beams can be used in parallel. In particular, the electron beam 227 and the photon beam can be used simultaneously as energy sources 215 (not shown in Figure 2).

[0246] The electron beam 227 can be used to record an image of the sample 205 (e.g., a photomask), in particular of the defect sites 120 of the sample 205 in the photomask. A detector 230 for detecting backscattered electrons and / or secondary electrons provides a signal proportional to the surface contour and / or composition of the sample 205.

[0247] The computer system 240 of the apparatus 200 can generate an image of the sample 205 by scanning the electron beam 227 over the entire sample 205 using the control device 245. The control device 245 may be part of the computer system 240, as shown in Figure 2, or it may run as a separate unit (not shown in Figure 2). The computer system 240 may be implemented in hardware, software, firmware, or a combination thereof, and may include algorithms that enable the extraction of an image from the measurement data of the detector 230. The screen of the computer system 240 (not shown in Figure 2) may then display the calculated image. Furthermore, the computer system 240 can store the measurement data and / or calculated image from the detector 230. The control unit 245 of the computer system 240 may also control the electron gun 215, the beam imaging and beam shaping elements 220 and 225, and the single-stage capacitor system 218. Control signals from the control device 245 may further control the movement of the sample stage 210 by a micromanipulator (not shown in Figure 2).

[0248] The apparatus 200 may include a second detector 235. The second detector 235 can be used to detect the energy distribution of secondary electrons emitted by the sample 205. Thus, the detector 235 makes it possible to analyze the composition of the material removed from the sample 205 in the local etching process. In an alternative embodiment, the detector 235 may include a SIMS (Secondary Ion Mass Spectroscopy) detector.

[0249] The electron beam 227 (or more generally, the focused particle beam 227) incident on the sample 205 may charge the sample 205. As a result, the electron beam 227 may be deflected, which may reduce the spatial resolution during recording and / or repair of defects 120. Furthermore, the micromanipulator used to align the sample 205 with respect to the area of ​​the sample 205 to be analyzed and / or repaired by the electron beam 227 may be affected by drift. To mitigate the effects of localized charging and / or thermal drift of the sample 205, the apparatus 200 can largely avoid the aforementioned undesirable effects during analysis, i.e., inspection and / or operation to repair the sample 205, by providing a supply container for applying the sacrificial layer 140 and reference marks 160 to the sample 205.

[0250] The apparatus 200 includes a first container 250 for storing a first precursor gas for the purpose of depositing the sacrificial layer 140. For this purpose, the first container may store, for example, a metal carbonyl (e.g., molybdenum hexacarbonyl (Mo(CO)6)).

[0251] The second supply container 255 may store a second precursor gas that can be used to generate the reference mark 160. As an example, the second precursor gas may store tetraethyl orthosilicate (TEOS, Si(OC2H5)4) or chromium hexacarbonyl (Cr(CO)6). In an alternative embodiment, the second supply container 255 may store a second precursor gas in the form of a first etching gas that facilitates the generation of the first reference mark in the form of local depressions in the second portion of the first sacrificial layer. Furthermore, the first etching gas can be used to remove the portion of the first sacrificial layer covering the defect to be repaired. The first etching gas may include xenon difluoride (XeF2) in combination with an additive gas (e.g., oxygen (O2) or chlorine (Cl2)). Alternatively, the first etching gas may include nitrosyl chloride (NOCl).

[0252] The third supply container 260 may store an additive gas (e.g., a halide (e.g., chlorine (Cl2)), a reducing agent (e.g., ammonia (NH3)), or an oxidizing agent (e.g., nitrogen dioxide (NO2) or water (H2O))). The use of the additive gas can assist in the deposition of the sacrificial layer 140 and / or the generation of the reference marks 160. Furthermore, the use of the additive gas from the third gas storage unit 260 can expose defects after the generation of the first sacrificial layer. It is preferable to use nitrogen dioxide (NO2) as the additive gas for the deposition of the sacrificial layer and / or water (H2O) as the additive gas for carrying out the etching process.

[0253] To process the sample 205 placed on the sample stage 210, that is, to repair defects 120 in the sample, the apparatus 200 includes at least three supply containers for at least third and fourth precursor gases. In the exemplary apparatus 200 of Figure 2, the third precursor gas stored in the fourth container 265 may include three different processing gases. These can be used for the deposition of a first portion of the first sacrificial layer, at least one second portion, and conductive connections between the first portion and at least one second portion.

[0254] Furthermore, the fourth supply container 265 may store a third precursor gas in a different form of deposition gas. By using this, the electron beam-induced deposition (EBID) process deposits insufficient material onto the sample 205. Unlike the material of the sacrificial layer 140, for example, the material deposited from the fourth supply container will exhibit very good adhesion to the sample 205 and reproduce its physical and optical properties as closely as possible. As an example, the fourth supply container 265 may store a main group alkoxide (e.g., TEOS) or a metal carbonyl (e.g., molybdenum hexacarbonyl (Mo(CO)6) or chromium hexacarbonyl (Cr(CO)6)).

[0255] A fifth supply container 270 may store a fourth precursor gas in the form of the second etching gas. The use of the second etching gas in the fifth supply container 270 allows for the removal of excess material from the sample 205 by a localized electron beam-induced etching (EBIE) process. A frequently used etching gas is xenon difluoride (XeF2). If the defects contain difficult-to-etch material, the second etching gas may include nitrosyl chloride (NOCl).

[0256] The sixth supply container 275 may store another precursor gas (for example, another deposition gas or a third etching gas). In another embodiment, the sixth supply container may store a second additive gas.

[0257] In the exemplary apparatus 200 shown in Figure 2, each supply container 250, 255, 260, 265, 270, 275 has its respective control valves 251, 256, 261, 266, 271, 276 to monitor or control the absolute value of the corresponding gas supplied per unit time, i.e., the gas volumetric flow rate at the electron beam 227 injection site. The control valves 251, 256, 261, 266, 271, and 276 are controlled and monitored by a control unit 245 of a computer system 240. This allows for a wide range of partial pressure ratios of the gas supplied to the processing position 229.

[0258] Furthermore, in the exemplary apparatus 200, each supply container 250, 255, 260, 265, 270, 275 has its own gas supply line system 252, 257, 262, 267, 272, 277, which terminates at a nozzle near the point of incidence of the electron beam 227 on the sample 205. In an alternative embodiment (not shown in Figure 2), the use of a gas supply line system carries some or all of the processing gases in a common flow onto the surface of the sample 205.

[0259] In the example shown in Figure 2, valves 251, 256, 261, 266, 271, and 276 are located near the corresponding containers 250, 255, 260, 265, 270, and 275. In an alternative configuration, control valves 251, 256, 261, 266, 271, and 276 can be incorporated near the corresponding nozzles (not shown in Figure 2). Unlike the example shown in Figure 2, although not preferred at present, it is also possible to supply one or more of the gases stored in containers 250, 255, 260, 265, 270, and 275 non-directionally to the lower part of the vacuum chamber 202 of the apparatus 200. In this case, the apparatus 200 would need to incorporate a throttling (not shown in Figure 2) between the lower reaction space 202 of the apparatus 200, which supplies the electron beam 227, and the upper part, in order to prevent an extremely low-pressure vacuum at the top of the apparatus 200.

[0260] Each of the supply containers 250, 255, 260, 265, 270, and 275 may have its own temperature setting and temperature control elements that enable both cooling and heating of the corresponding supply container. This allows the deposition gas, additive gas, and etching gas to be stored and supplied at their respective optimal temperatures (not shown in Figure 2). Furthermore, if the precursor is solid or liquid, the vapor pressure of one or more precursor gases can be adjusted by the temperature in one or more supply containers. In addition, the gas volumetric flow rate of gaseous precursors can be controlled by a mass flow controller (MFC).

[0261] Furthermore, each supply system 252, 257, 262, 267, 172, and 277 may be equipped with its own temperature setting and temperature control elements (similarly not shown in Figure 2) to supply all process gases at their respective optimal processing temperatures at the injection point of the electron beam 227 on the sample 205. The control device 245 of the computer system 240 can control the temperature setting and temperature control elements of both the supply containers 250, 255, 260, 265, 270, 275 and the gas supply line systems 252, 257, 262, 267, 272, 277, and can adjust the gas volume flow rate through one or more MFCs.

[0262] The apparatus 200 in Figure 2 includes a pump system (not shown in Figure 2) for generating and maintaining the necessary vacuum in the reaction chamber 202. With control valves 251, 256, 261, 266, 271, and 276 closed, the reaction chamber 202 of apparatus 200 has a pressure of 10 -6 A residual gas pressure of less than mbar is achieved. The pump system may include separate pump systems for the upper part of the apparatus 200 for supplying the electron beam 227 and for the lower part, which includes a reaction chamber 202 with a sample stage 210 and a sample 205. Furthermore, the apparatus 200 may include a suction extractor (not shown in Figure 2) to define specified local pressure conditions on the surface of the sample 205 near the processing point 229 of the electron beam 227. The use of an additional suction extractor can substantially prevent the deposition of one or more volatile reaction products of deposit gas, additive gas, and etching gas on the sample 205 and / or in the reaction chamber 202, which are not required in the local particle beam-induced process. The functions of one or more pump systems and additional suction extractors are also controllable and / or monitored by the control device 245 of the computer system 240.

[0263] The control device 245, the computer system 240, or a dedicated component of the computer system 240 can determine the size of one or more reference marks 160 for the identified defect 120. The size of the reference marks 160 includes determining both their area and height. Furthermore, the control device 245, the computer system 240, or a specific component of the computer system 240 can determine the scanning area of ​​the electron beam 227 used to scan the location of the reference marks 160. By grasping this, the control device 245 and / or the computer system 240 can determine the size of the sacrificial layer 130.

[0264] The control device 245 typically selects an area for the sacrificial layer 140 that is twice the size of the scanning area, taking into account the drift between the sample 205 and the particle beam 227 during the analysis and / or repair process. Furthermore, by knowing the material composition of the sample 205, the control device 245 can select a precursor gas for depositing one or more sacrificial layers 140. In addition, the control device 245 can select one or more precursor gases, and optionally an additive gas, for depositing one or more reference marks 160 on the sacrificial layer 140. By suitably selecting the material compositions of the sacrificial layer 140 and the reference marks 160, the visibility of the reference marks 160 against the background of the sacrificial layer 140 can be optimized.

[0265] Furthermore, as with reference mark 160, the size of the sacrificial layer 140 includes its thickness as well as its lateral dimensions. This is designed to withstand a specified number of scanning procedures of the particle beam 227. In addition, the thickness of the sacrificial layer 140 is selected so that components of a repair process performed in close proximity can be deposited on the sacrificial layer 140 without destroying it. Finally, the material composition of the sacrificial layer 140 is selected so that it can be removed from the sample 205 by a cleaning process (e.g., a wet chemical cleaning process and / or a mechanical cleaning process).

[0266] The lower portion image of Figure 2 shows a cleaning apparatus 290 having a cleaning solution 295 used to clean a sample 205 before, during, and / or after a processing procedure in apparatus 200 in which one or more sacrificial layers 140 and one or more reference marks 160 are deposited. The sacrificial layers 140 and reference marks 160 are removed integrally from the sample 205 in a conventional cleaning process. The cleaning apparatus 290 may also include one or more ultrasonic sources and / or multiple polar ultrasonic sources (not shown in Figure 2) capable of generating ultrasonic and / or polar ultrasonic excitation of the cleaning solution 295. Furthermore, the cleaning apparatus 290 may also include one or more light sources that emit in the ultraviolet (UV) and / or infrared (IR) spectral range and can be used as an aid to the cleaning process.

[0267] Figure 3a is a plan view of a cross-section 305 of the photomask 300 on the substrate 310. The cross-section 305 of the mask 300 includes pattern elements 315 and defects 320 of the substrate 310. In the example shown in Figure 3a, the substrate 310 has a defect 320 of deficient material, which is intended to be repaired using a particle beam-induced processing process. However, the defect 320 can also be a defect of excess material. To allow compensation for drift of the particle beam or electron beam 227 during the processing process, the cross-section 305 includes four second reference marks 335, 355, 365, and 385. As in subsequent examples, the reference marks 335, 355, 365, and 385 have a cylindrical shape in the example shown in Figure 3a. The reference marks 335, 355, 365, and 385 may have a diameter of 50 nm and a height of 100 nm.

[0268] The second reference marks 335, 355, 365, and 385 are deposited on the second sacrificial layers 330, 350, 370, and 380. In this case, two second sacrificial layers 330 and 360 are deposited on the pattern element 315 of the mask 300, and two second sacrificial layers 350 and 380 are deposited on the substrate 310 of the mask 300. The second sacrificial layers 330, 350, 370, and 380 may be manufactured from a material or material composition that can be easily removed from the mask 300 after repair of the defect 320, for example by a standard mask cleaning process. As an example, molybdenum hexacarbonyl (Mo(CO)6) can be used as a precursor gas for depositing the second sacrificial layers 330, 350, 370, and 380.

[0269] The second reference marks 335, 355, 365, and 385 are preferably deposited on the sacrificial layers 330, 350, 360, and 380 by another precursor gas or a second precursor gas. Examples of the second precursor gas include chromium hexacarbonyl (Cr(CO)6) and tetraethyl orthosilicate (TEOS, Si(OC2H5)4). It is convenient that the second sacrificial layers 330, 350, 360, and 380 and the second reference marks 335, 355, 365, and 385 are manufactured from different materials. As a result, when scanning the second reference marks 335, 355, 365, and 385 using the charged particle beam 227, differences in materials exist in addition to differences in topology. This makes it easier to determine the positions of the second reference marks 335, 355, 365, and 385.

[0270] In Figure 3a, the dashed rectangles define the scanning regions 332, 352, 362, and 382 scanned by the particle beam 227 for the purpose of determining the positions of the second reference marks 335, 355, 365, and 385. In Figure 3a, the four double-headed arrows indicate the second reference distances 340, 345, 370, and 390 between the defect 320 and the reference marks 335, 355, 365, and 385. The example in Figure 3a reproduces the four second reference marks 335, 355, 365, and 385 for compensating for drift in part of the processing of the defect 320. For drift compensation, one of the second reference marks 335, 355, 365, and 385 and one of the reference distances 340, 345, 370, and 390 is sufficient.

[0271] As described below, the four second reference distances 340, 345, 370, and 390, as well as the four second reference marks 335, 355, 365, and 385, are used to compensate for drift while depositing the first sacrificial layer for the purpose of repairing the defect 320. Furthermore, the second reference marks 335, 355, 365, and 385 for compensating for drift can also be used in the local etching process to remove the sacrificial layer from the defect 320 by etching. Thus, the second reference marks 335, 355, 365, and 385 are only useful for positioning the first sacrificial layer and compensating for drift while patterning the sacrificial layer with respect to the defect to be repaired. However, they are not used to compensate for drift during the actual defect repair.

[0272] The requirements for the placement of the first sacrificial layer are fewer compared to those for actual defect repair. Therefore, for process economic reasons, it is considered advantageous to directly deposit the second reference marks 335, 355, 365, and 385 onto the photomask 300. This improvement is shown in Figure 3b.

[0273] Figure 4 shows a first exemplary embodiment in which the first sacrificial layer 400 is applied to the entirety and around the defect 320 in the mask cross section 305 of Figure 3a. The first sacrificial layer 400 is deposited entirely on the substrate 310 of the photomask 310. A first portion 410 of the sacrificial layer 400 completely covers the defect 320 and extends around it. In one improvement, the first portion 410 of the sacrificial layer 400 may cover only a portion of the defect 320 (not shown in Figure 4). In another preferred improvement, the first sacrificial layer 400 or a first portion 410 is deposited on the substrate 310 of the mask 300 such that the first portion 410 of the first sacrificial layer 400 borders the defect 320 as completely as possible (likewise, not shown in Figure 4). The two improvements described herein can simplify the repair process for the defect 320. As explained above, the second set of reference marks 335, 355, 365, and 385 can be used for drift compensation and, consequently, for the precise deposition of the first sacrificial layer related to defect 320.

[0274] In the exemplary embodiment shown in Figure 4, the first portion 410 and the second portion 420 of the first sacrificial layer 400 are interconnected in the same plane. In the corner region of the second portion 420 of the first sacrificial layer 400, four first reference marks 425, 435, 445, and 455 are deposited on the second portion 420 of the first sacrificial layer 400. In Figure 4, the scanning regions 422, 432, 442, and 452 that a focused particle beam (e.g., electron beam 227) scans for the purpose of determining the positions of the first reference marks 425, 435, 445, and 455 are indicated by dashed rectangles 422, 432, 442, and 452.

[0275] Figure 5 shows a second exemplary embodiment of a first sacrificial layer 500 deposited on and around a defect 320 of the mask 300. In the example of Figure 5, a first portion 510 of the first sacrificial layer 500 similarly completely covers the defect 320 and additionally extends beyond the edge of the defect 320. Furthermore, the first sacrificial layer 500 comprises a first second portion 530, a second second portion 540, a third second portion 550, and a fourth second portion 560. The second second portion 540 and the third second portion 550 of the sacrificial layer 500 are deposited on the substrate 310 of the mask 300 and overlap with the first portion 510. The first second portion 530 and the fourth second portion 560 are deposited on the pattern element 315 of the mask 300 and are connected to the first portion 510 of the first sacrificial layer 500 by conductive webs 570 and 580 or conductive connections 570 and 580. The size of the first portion 510 of the first sacrificial layer 500 is determined by the size of the defect 320 and the focal diameter of the particle beam 227 used to repair the defect 320.

[0276] A second exemplary embodiment of the first sacrificial layer 500 demonstrates the flexibility that the first sacrificial layer can be designed. By positioning a portion of the second part on the pattern element 315, potential damage to the mask resulting from defect repair can be minimized. Furthermore, the need for the focused particle beam 227 to scan the entire edge of the pattern element 315 for the purpose of determining the positions of the reference marks 535, 565 can be avoided. As a result, the accuracy of determining the positions of the reference marks 535, 565 can be optimized.

[0277] Each of the four second portions 530, 540, 550, and 560 of the sacrificial layer 500 has the first reference marks 535, 545, 555, and 565 deposited on it, respectively. Furthermore, scanning areas 532, 542, 552, and 562 of the focused particle beam for detecting the first reference marks 535, 545, 555, and 565 are plotted on the second portions 530, 540, 550, and 560 of the first sacrificial layer 500. The areas of the four second portions 530, 540, 550, and 560 of the first sacrificial layer 500 are dimensionally defined so that the focused particle beam 227 scans only the entirety of the second portions 530, 540, 550, and 560 of the first sacrificial layer, even if the drift of the focused particle beam 227 for repairing the defect 320 is relatively large. As a result, uncontrollable localized charging of the first sacrificial layer 500 can be reliably avoided. Reference marks 425, 435, 445, 455, 535, 545, 555, and 565 may have a diameter of 50 nm and a height of 100 nm.

[0278] The first sacrificial layers 400, 500 have a composition of a conductive material. For example, the sacrificial layers 400, 500 may be deposited on the substrate 310 of the mask 300 or on the pattern elements 315 of the mask 300 by performing a local particle beam-induced deposition process with an optional additive gas (e.g., an oxidizing agent) added to a precursor gas (e.g., molybdenum hexacarbonyl (Mo(CO)6)). Naturally, other materials (e.g., chromium hexacarbonyl (Cr(CO)6)) can also be used for the deposition of the first conductive sacrificial layers 400, 500.

[0279] In the case of the first sacrificial layer 400 in Figure 4, the first portion 410 and the second portion 420 have the same material composition. Similarly, in the case of the first sacrificial layer 500 in Figure 5, the first portion 510, the four second portions 530, 540, 550, 560, and the two conductive connections 570, 580 may be deposited with a single precursor gas. However, the first portion 510, the second portions 530, 540, 550, 560, and the conductive connections can also be deposited on the substrate 310 of the mask 300 or on the pattern element 315 using different precursor gases.

[0280] It is advantageous to dimensionally define the area of ​​the first sacrificial layers 400, 500 as large as possible. As a result, the charge generated when scanning the first reference marks 530, 540, 550, 560 within the scope of defect removal and / or defect repair can be distributed over a large area. Consequently, the generated charge causes only a slight change in the electrostatic potential of the first sacrificial layers 400, 500. However, of particular importance is that the electrostatic potential changes uniformly or homogeneously throughout the first sacrificial layers 400, 500. This means that the focused particle beam 227 expects substantially the same electrostatic potential and therefore the same deflection everywhere when scanning the first reference marks 535, 545, 555, 565, etching the first sections 410, 510, and processing the defect 320.

[0281] The thickness of the first portions 410, 510 of the sacrificial layers 400, 500 is selected so that the first portions 410, 510 can withstand the defect processing process of 320 without being essentially damaged. The thickness of the second portions 420 or the second portions 420, 530, 540, 550, 560 of the first sacrificial layers 400, 500 is designed so that the second portions 420 or the second portions 420, 530, 540, 550, 560 do not change substantially even as a result of scanning the first reference marks 425, 435, 445, 455, 535, 545, 555, 565 multiple times. The control device 245 and / or computer system 240 of the apparatus 200 can determine the thickness of the first portions 410, 510 and / or the second portions 420 or 530, 540, 550, 560 of the sacrificial layers 400, 500 by grasping the defect 320 and the focused particle beam 227.

[0282] Also, as described above in the context of the second sacrificial layers 330, 350, 360, 380 and the second reference marks 335, 355, 365, 385, the second portions 420 of the sacrificial layers 400, 500 or the second portions 530, 540, 550, 560 are also advantageous when the first reference marks 425, 435, 445, 455, 535, 545, 555, 565 have a different material composition from the second portions 420 or the second portions 530, 540, 550, 560. When differences in materials occur together with topological differences, the detection of the first reference marks 425, 435, 445, 455, 535, 545, 555, 565 becomes easier.

[0283] After the deposition of the first sacrificial layers 400, 500 described based on FIGS. 4 and 5, the defect 320 completely covered by the first portions 410, 510 in FIGS. 4 and 5 is exposed. Usually, this is performed by a local particle beam induced etching process. The etching gas used for this purpose and additionally required additive gases are selected based on the material composition of the first portions 410, 510 of the first sacrificial layers 400, 500. The selection of one or more precursor gases to be used can be corresponded by the control device 245 and / or the computer system 240. Possible etching gases include xenon difluoride (XeF2) itself or a combination with water (H2O). When the first portions 410, 510 of the first sacrificial layers 400, 500 contain chromium as an essential component, nitrosyl chloride (NOCl) combined with water (H2O) can be used as a precursor gas in the local particle beam induced etching process for removing the defect 320.

[0284] The drift of the focused particle beam 227 with respect to the defect is compensated by the second reference distances 340, 345, 370, 390 and the second reference marks 335, 355, 365, 385. For this purpose, the local etching process is interrupted at regular or irregular time intervals, and the focused particle beam 227 of the device 200 scans the entire second sacrificial layers 330, 350, 360, 380 to determine the positions of the second reference marks 335, 355, 365, 385. The control device 245 and / or the computer system 240 determines and corrects the occurrence of the drift from the measurement data.

[0285] The defect 320 shown in FIG. 3a is a defect of insufficient material of the substrate 310 of the photomask 300. If the defect 320 is a defect of excess material, the removal of the defect and the etching of the defect can be performed in a single process step. The drift of the first part of the local etching process is corrected by the second reference marks 335, 355, 365, 385. The drift of the second part of the local etching process within the range where the actual defect is etched is corrected by the first reference marks 425, 435, 445, 455, 535, 545, 555, 565. Based on the detected backscattered electrons and / or the spectrum of secondary electrons, the device 200 can recognize whether it is the first part 410, 510 of the first sacrificial layers 400, 500 that is being etched or the defect 320. If necessary, the etching gas or a combination of the etching gas and an additive gas can be adjusted with respect to the etching progress.

[0286] In the examples in Figures 4 and 5, the sacrificial layers 400 and 500 completely cover the defect 320. Prior to processing the defect 320 (a defect due to insufficient substrate material), it is necessary to remove the first portions 410 and 510 of the first sacrificial layers 400 and 500 that cover the defect 320. Therefore, it is advantageous if the first portions 410 and 510 of the first sacrificial layers 400 and 500 do not cover the entire defect (not shown in Figures 4 and 5). If the first portions 410 and 510 extend only to a portion of the defect 320, less material needs to be removed from the defect 320 prior to actual defect repair. In the best-case scenario, the first portions 410 and 510 of the first sacrificial layers 400 and 500 extend over the entire edge 325 of the defect 320. As a result, the economics of the etching step of the first portions 410 and 510 of the sacrificial layers 400 and 500 can be improved. As described above, by correcting for drift during the deposition procedure using the second reference marks 335, 355, 365, and 385, the first portions 410 and 510 of the sacrificial layers 400 and 500 can be deposited accurately.

[0287] The reference distances 720, 730, 740, and 750 between the first reference marks 525, 535, 545, and 555 and the defect 320 to be removed are still determined before the start of the actual defect processing process. Figure 7 reproduces the reference distances 720, 730, 740, and 750. Otherwise, Figure 7 corresponds to Figure 6. The determination of the reference distances 720, 730, 740, and 750 can be performed by scanning the defect 320 and the first reference marks 525, 535, 545, and 555 using the focused particle beam 227. The control device 245 and / or computer system 240 of the apparatus 200 can determine the reference distances 720, 730, 740, and 750 from the measurement data.

[0288] Here, during the processing of defects 320 by the particle beam-induced deposition process, the drift of the focused particle beam 227 can be corrected for defects 320 to be repaired by using first reference marks 425, 435, 445, 455, 535, 545, 555, 565 and first reference distances 720, 730, 740, 750. For this purpose, the local deposition process is interrupted at regular or irregular time intervals, and the first reference marks 535, 545, 555, 565 are scanned using the focused particle beam 227. The control device 245 and / or computer system 240 can then determine and correct for the occurrence of drift from the measurement data. A silicon-containing precursor gas (e.g., tetraethyl orthosilicate (TEOS,Si(OC2H5)4)) can be used to fill the defects 320 with the material of the substrate 310 of the mask 300.

[0289] As shown in Figures 6 and 7, the first portions 410 and 510 of the sacrificial layers 400 and 500 extend around the entire circumference of the defect 320. As a result, the first portions 410 and 510 of the sacrificial layers 400 and 500 can effectively protect the substrate 310 of the photomask 300 surrounding the defect from the effects of local deposition processes occurring in the immediate vicinity of the defect 320. Figure 8 shows a cross-section of the mask 305 after the completion of the repair process for the defect 320. The defect 320 has been completely removed by the deposition of substrate material 800. However, due to the local deposition process, substrate material 800 has also been deposited on the first portions 410 and 510 of the first sacrificial layers 400 and 500 around the defect 320, which is undesirable. This is indicated by the reference symbol 850 in Figure 8.

[0290] Figure 9 reproduces the SEM image of cross-section 305 of the photolithography mask 300 in Figure 3a after the removal of the second sacrificial layers 330, 350, 360, and 380, with the second reference marks 335, 355, 365, and 385 and the first sacrificial layers 400 and 500 associated with the corresponding first reference marks 425, 435, 445, 455, 535, 545, 555, and 565. The sacrificial layers 330, 350, 360, 380, 400, and 500 on which the reference marks 335, 355, 365, 385, 425, 435, 445, 455, 535, 545, 555, and 565 are located, as well as the substrate material 800 of the edge region 850 of the first portion 510 of the sacrificial layer 500, are removed from the photomask 300 with virtually no residue from the cleaning solution 295 of the cleaning device 290. A major advantage of the described method is that, after the completion of the defect correction process, auxiliary structures deposited on the sample 205 can be removed from the sample 205 by a standard cleaning process (e.g., conventional mask cleaning).

[0291] However, it is also possible to remove some or all of the sacrificial layers 330, 350, 360, 380, 400, and 500, on which reference marks 335, 355, 365, 385, 425, 435, 445, 455, 535, 545, 555, and 565 are located, from the mask 300 by a localized particle beam-induced etching process. This procedure may be advantageous if the goal is to remove one or more other defects from the sample 205 that may be interfered with by the deposited auxiliary structures. In the apparatus 200, alternative removals can be performed without the need to remove the sample 205 from the apparatus 200 by breaking the vacuum.

[0292] Image 1095 in Figure 10 shows a cross-sectional recording of stamp 1000 for nanoimprint lithography (NIL). Similar to Image 1195 in the subsequent Figure 11, the recording in Image 1095 in Figure 10 reproduces a scanning transmission electron microscope (STEM) recording made using high-angle annular dark-field (HAADF).

[0293] The intention is to etch depressions 1010 into the NIL stamp 1000 at periodic or irregular intervals. The etching process is performed using the apparatus 200 described based on Figure 2. This means that an EBIE process is performed. To protect the stamp 1000 during the local etching process, a sacrificial layer 1010 in the form of a "hard mask" is deposited over the entire area of ​​the stamp 100 to be processed, i.e., the area where the depressions 1020 are intended to be created. The sacrificial layer 1010 is deposited on the stamp 1000 by an EBID process using a precursor gas. In the examples in Figures 10 and 11, molybdenum hexacarbonyl (Mo(CO)6) precursor gas is used. Image 1095 shows a thick sacrificial layer 1010. The thick sacrificial layer 1010 may be on the order of 100 nm in thickness.

[0294] In the examples shown in Figures 10 and 11, the depression 1020 is etched through a sacrificial layer 1010. The sacrificial layer 1010 serves to effectively protect the surface 1030 of the stamp 1000 around the depression 1020 to be created during the etching process. Furthermore, the sacrificial layer 1010 is intended to minimize the curvature 1040 of the edges that occurs when etching the surface 1030 of the NIL stamp 1000. In addition, the purpose of the sacrificial layer 1010 is to maximize the sidewall angle 1050 of the resulting depression 1020 so that the etched depression 1020 has a sidewall angle 1050 that is as close to a right angle as possible with respect to the surface 1030 of the stamp 1000.

[0295] Image 1195 in Figure 11 reproduces Image 1095 in Figure 10, but the difference between the two is that the sacrificial layer 1120 deposited based on the molybdenum hexacarbonyl (Mo(CO)6) precursor gas has a smaller thickness. For example, the thickness of the sacrificial layer 1110 in Figure 11 may be approximately half the thickness of the sacrificial layer 1010 in Figure 10.

[0296] Images 1200, 1300, and 1400 in Figures 12-14 show the measurement data for depressions 1020 and 1120 of the NIL stamps 1000 and 1100 shown in Figures 10 and 11. The measurement data for depressions 1120 etched through a thin sacrificial layer 1110 is indicated by the letter (b) in images 1200-1400. The measurement data for thin layers 1020 etched through a thick sacrificial layer 1010 is represented by the letter (c) in images 1200-1400. For comparison, an etching process to generate depressions 1020 and 1120 was performed on the NIL stamps without prior application of protective sacrificial layers 1010 and 1110. In the following images 1200-1400, the measurement data for this etching process is indicated by the letter (a).

[0297] Image 1200 in Figure 12 shows the width of the generated depressions 1020, 1120 as a function of etching depth. In the measurement data shown in Figure 12, the width or diameter of the etched depressions 1020, 1120 is measured at a depth corresponding to 10% of the specified etching depth. Compared to etching within the range where the NIL stamps 1000, 1100 are not covered by the sacrificial layers 1010, 1110, the depressions etched without the protective sacrificial layers 1010, 1110 have a much larger diameter (a).

[0298] Image 1300 in Figure 13 reproduces the measurement data for etched depressions 1020 and 1120, where the width or diameter of depressions 1020 and 1120 was measured at a depth corresponding to 50% of the nominal etching depth. Even at 50% depth, depressions 1020 and 1120 generated without the sacrificial layers 1010 and 1110 still have a larger diameter than depressions 1020 and 1120 etched through the sacrificial layers 1010 and 1110. However, from a comparison of images 1200 and 1300, it is clear that these differences decrease with increasing distance from the surfaces 1030 and 1130.

[0299] Image 1400 in Figure 14 shows the measured sidewall angles for the three measurement datasets described above as a function of the generated depressions 1020 and 1120. When sacrificial layers 1010 and 1110 are applied, the sidewall angles of the etched depressions 1020 and 1120 are larger compared to the EBIE process performed without the protection of sacrificial layers 1010 and 1110.

[0300] Images 1595, 1695, and 1795 in Figures 15-17 show enlarged cross-sections of the etching process shown in Figures 10 and 11 for generating depressions in the NIL stamp by the EBIE process. The EBIE process is performed by a focused particle beam 227 of apparatus 200 combined with an etching gas and, optionally, an additive gas. As described above, the preferred particles of the focused particle beam 227 are electrons.

[0301] Prior to etching of depressions 1520, 1620, and 1720, a sacrificial layer 1510 is deposited on the surface 1530 of the area where depressions 1520, 1620, and 1720 are intended to be fabricated. This means that the etching process, as described in the examples in Figures 10 and 11, is carried out through the sacrificial layer 1510. As the sacrificial layer 1510, either sacrificial layer 1010 or 1110 in Figures 10 and 11 is possible. Naturally, different precursor gases (e.g., different metal carbonyls (e.g., chromium hexacarbonyl (Cr(CO)6)))) can be used for the purpose of depositing the sacrificial layer 1510.

[0302] Image 1595 in Figure 15 shows the results of etching processes using etching gases that etch the sacrificial layer 1510 faster than the material of the NIL stamp 1500, combinations of two or more etching gases, or etching gases and additive gases. As a result of the high etching rate of the sacrificial layer 1510, the sacrificial layer 1510 recedes further from the edges of the planned depression 1520 as the etching duration increases. The surface 1530 of the stamp 1500, which is released in the process, is affected by another aspect of the EBIE process without protection. The edges of the surface 1530 along the depression 1520 take on a large rounding 1540 as a result of the particle beam-induced etching process. Furthermore, the EBIE process tends to produce a depression 1520 with a funnel-shaped structure where the sidewall angle 1550 is much smaller than 90°.

[0303] Image 1695 in Figure 16 shows the result of an EBIE process in which the material of the stamp 1500 was etched faster than the material of the sacrificial layer 1010. When the particle beam-induced etching process creates an opening in the sacrificial layer 1510, the process proceeds faster in the stamp 1500 than in the sacrificial layer 1510. This results in undesirable under-etching 1640 of the sacrificial layer 1510. Furthermore, the side wall angle 1650 of the depression 1620 deviates significantly from the defined right angle with respect to the surface 1530 of the stamp 1500. Overall, the resulting depression 1620 deviates significantly from the defined cylindrical shape.

[0304] Image 1795 in Figure 17 shows the depression 1720 after completion of the EBIE process, in which the etching gas etches the material of the sacrificial layer 1510 and the material of the NIL stamp 1500 at the same rate. The edge rounding 1740 in the transition from the surface 1530 to the depression 1720 is minimized by the uniform etching of the sacrificial layer 1510 and the stamp 1500. Furthermore, the EBIE process, which etches the sacrificial layer 1510 and the stamp 1500 at the same rate, maximizes the sidewall angle 1750.

[0305] Therefore, when performing a particle beam induced etching process through the sacrificial layer 1510, it is particularly advantageous to design the EBIE process such that the same etching rate conditions are met for the sacrificial layer 1510 and the samples 205, 300, 1500. This can be achieved by selecting a suitable material for the sacrificial layer 1510 given a particular etching gas. Given the material of the sacrificial layer 1510, an etching gas, combinations of various etching gases, and / or an etching gas and at least one additive gas can be selected to etch the sacrificial layer 1510 and the samples 205, 300, 1500 at substantially the same rate. It is particularly convenient if both the material of the sacrificial layer 1510 and the etching gas can be selected.

[0306] Finally, FIG. 18 shows a flowchart 1800 of a method for repairing defects 320 in samples 205, 300, 1500 as described in the present application. This method begins at step 1810. In the first step 1820, a defect map of the samples 205, 300, 1500 is determined using the focused particle beam 227. The defect map includes at least one defect 320. By using the focused particle beam 227 of the apparatus 200, at least one defect 320 in the samples 205, 300, 1500 can be scanned. The control device 245 and / or the computer system 240 of the apparatus 200 can determine the defect map of the samples 205, 300, 1500 from the measurement data generated by the focused particle beam 227.

[0307] In the next step 1830, at least one second local sacrificial layer 330, 350, 370, 380 is generated on the samples 205, 300, 1500. The at least one second local sacrificial layer 330, 350, 370, 380 can be deposited on the samples 205, 300, 1500 by performing an EBID process with the apparatus 200.

[0308] Subsequently, in step 1840, at least one second reference mark 335, 355, 365, 385 is generated on at least one second local sacrificial layer 330, 350, 360, 380. At least one second reference mark 335, 355, 365, 385 is located at a greater distance from at least one defect 320 than at least one first reference mark 425, 435, 445, 455, 535, 545, 555, 565. At least one second reference mark 335, 355, 365, 385 can be generated by performing a particle beam-induced deposition process with the apparatus 200.

[0309] Steps 1820, 1830, and 1840 are optional steps in the method for repairing at least one defect 320 in samples 205, 300, and 1500. Therefore, in Figure 18, these steps are represented by dashed edges.

[0310] In step 1850, at least one first localized conductive sacrificial layer 400, 500 is generated, having first portions 410, 510 and at least one second portion 420, 530, 540, 550, 560. The first portions 410, 510 are adjacent to at least one defect 320, and the first portions 410, 510 and at least one second portion 420, 530, 540, 550, 560 are electrically connected to each other. The apparatus 200 can generate the first localized conductive sacrificial layers 400, 500 on samples 205, 300, 1500 by performing the EBID process.

[0311] In the next step 1860, at least one first reference mark 425, 435, 445, 455, 535, 545, 555, 565 is generated on at least one second portion 420, 530, 540, 550, 560 of the first local conductive sacrificial layers 400, 500 to compensate for the drift of the focused particle beam 227 with respect to at least one defect 320 during the repair of at least one defect 320. This process step can be performed by the focused particle beam 227 of the apparatus 200 in combination with at least one precursor gas. Finally, this method is terminated in step 1870.

[0312] To facilitate understanding of the present invention, other embodiments will be described below.

[0313] 1. A method (1800) for repairing at least one defect (320) of a sample (205, 300, 1500) using a focused particle beam (227), a. Step (1850) of generating at least one first localized conductive sacrificial layer (400, 500) on a sample (205, 300, 1500), wherein the first localized conductive sacrificial layer (400, 500) has a first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560), the first portion (410, 510) is adjacent to at least one defect (320), and the first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560) are electrically connected to each other (570, 580), and step (1850), b. Step (1860) of generating at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) on at least one second portion (420, 530, 540, 550, 560) of the first local conductive sacrificial layer (400, 500) in order to compensate for drift of the focused particle beam (227) with respect to at least one defect (320) during repair of at least one defect (320), Method (1800), including the following.

[0314] 2. The method according to Embodiment 1 (1800), wherein the proximity of the first portion (410, 510) to at least one defect (320) includes at least one element from the group consisting of proximity of the first portion (410, 510) to an edge (325) of at least one defect (320), partial covering of the at least one defect (320) by the first portion (410, 510), and complete covering of the at least one defect (320) by the first portion (410, 510).

[0315] 3. The method according to Embodiment 1 (1800), further comprising the step of determining at least one first reference distance (720, 730, 740, 750) between at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) and at least one defect (320) before repair of at least one defect (320) is initiated.

[0316] 4. The method according to Embodiment 1 (1800), wherein at least one second portion (430, 530, 540, 550, 560) extends over the entirety of at least one scanning region (422, 432, 442, 452, 532, 542, 552, 562) of a focused particle beam (227) for detecting at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565).

[0317] 5. The method according to Embodiment 1 (1800), wherein the step of generating a first localized conductive sacrificial layer (400, 500) includes depositing the first localized conductive sacrificial layer (400, 500) by a focused particle beam (227) in combination with at least one first precursor gas.

[0318] 6. The method according to Embodiment 1 (1800), wherein the step of generating at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) includes depositing at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) using a focused particle beam (227) in combination with at least one second precursor gas.

[0319] 7. The method according to Embodiment 1 (1800), further comprising the step of removing a portion of the first part (410, 510) of the first sacrificial layer (400, 500) covering at least one defect (320) before at least one defect (320) is repaired.

[0320] 8. The method (1800) of Embodiment 1, wherein at least one defect (320) includes a defect of excess material, and the method (1800) further includes the step of repairing at least one defect (320) through at least a portion of the first sacrificial layers (400, 500, 1510).

[0321] 9. The method according to Embodiment 1 (1800), wherein the first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560) of the first sacrificial layer (400, 500) have a lateral range such that the image cross-section containing at least one defect (320) is distorted by 10% or less, preferably 5% or less, more preferably 2% or less, and most preferably 1% or less, by the operation of repairing at least one defect (320).

[0322] 10. The method according to Embodiment 1 (1800), wherein at least one defect (320) includes a defect of excess material, and the operation to repair at least one defect is such that the etching rate of the etching process induced by the focused particle beam is substantially the same for at least one defect (320) and the first portion (410, 510), comprising selecting the material composition of the first portion (410, 510) of the first sacrificial layer (400, 500, 1510), the second etching gas, and / or at least one additive gas.

[0323] 11. The method according to Embodiment 1 (1800), further comprising the step of generating a defect map of the sample (205, 300, 1500) by scanning the sample (205, 300, 1500) with a focused particle beam (227).

[0324] 12. The method according to Embodiment 1 (1800), further comprising the steps of generating at least one second reference mark (335, 355, 365, 385) on a sample (205, 300, 1500), and determining at least one second reference distance (340, 345, 370, 390) between at least one second reference mark (335, 355, 365, 385) and at least one defect (320) before the start of generation of the first sacrificial layer (400, 500).

[0325] 13. The method according to Embodiment 1 (1800), further comprising the steps of: generating at least one second sacrificial layer (330, 350, 360, 380) on a sample (205, 300, 1500); depositing at least one second reference mark (335, 355, 365, 385) on at least one second sacrificial layer (330, 350, 360, 380); and determining at least one second reference distance (340, 345, 370, 390) between at least one second reference mark (335, 345, 365, 385) and at least one defect (320) before the start of generation of the first sacrificial layer (400, 500).

[0326] 14. The method according to Embodiment 1 (1800), wherein at least one second reference distance (340, 345, 370, 390) is greater than at least one first reference distance (720, 730, 740, 750).

[0327] 15. The method according to Embodiment 1 (1800), further comprising the step of correcting drift while performing at least one element of the group consisting of generating a first sacrificial layer (400, 500) and removing a portion of the first portion (410, 510) of the first sacrificial layer (400, 500) covering at least one defect (320) from at least one defect (320) by using at least one second reference mark (335, 355, 365, 385) and at least one second reference distance (340, 345, 370, 390).

[0328] 16. The method according to Embodiment 1 (1800), further comprising the step of integrally removing a first sacrificial layer (400, 500) and at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) from a sample (205, 300, 1500) within the scope of a wet chemical cleaning process and / or a mechanical cleaning process.

[0329] 17. The method according to Embodiment 1 (1800), further comprising the step of integrally removing a first sacrificial layer (400, 500), at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565), and at least one second reference mark (335, 355, 365, 385) from a sample (205, 300, 150000) within the scope of a wet chemical cleaning process and / or a mechanical cleaning process.

[0330] 18. A computer program comprising instructions for a computer system (240) to perform a step according to any one of embodiments 1 to 17.

[0331] 19. Apparatus (200) for repairing at least one defect (320) of a sample (205, 300, 1500) using a focused particle beam (227), a. A means for generating at least one first localized conductive sacrificial layer (400, 500) on a sample (205, 300, 1500), wherein the first localized conductive sacrificial layer (400, 500) has a first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560), the first portion (410, 510) is adjacent to at least one defect (320), and the first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560) are electrically connected to each other. b. Means for generating at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) on at least one second portion (420, 530, 540, 550, 560) of the first local conductive sacrificial layer (400, 500) in order to compensate for drift of the focused particle beam (227) with respect to at least one defect (320) during the repair of at least one defect (320), Apparatus (200) comprising:

[0332] 20. The apparatus (200) according to Embodiment 19, wherein the means for generating a first sacrificial layer (400, 500) includes at least one electron beam (227), and the apparatus (200) is configured to focus the electron beam (227) to a diameter of less than 2 nm when the kinetic energy of electrons colliding with the sample (205, 300, 1500) is less than 3000 eV, preferably less than 1500 eV, more preferably less than 1000 eV, even more preferably less than 800 eV, and most preferably less than 600 eV.

[0333] 21. The apparatus (200) according to Embodiment 19, configured to perform the method described in any one of Embodiments 1 to 17.

Claims

1. A method for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), the process includes generating at least one first sacrificial layer (400, 500) on the sample (205, 300, 1500) in proximity to the at least one defect (320) in order to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The first sacrificial layer (400, 500) has a first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560), wherein the first portion (410, 510) is adjacent to the at least one defect (320), and the first portion (410, 510) and the at least one second portion (420, 530, 540, 550, 560) are electrically connected to each other (570, 580). method.

2. A method for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), The repair of the at least one defect (320) includes the step of generating at least one first conductive sacrificial layer on the sample (205, 300, 1500) to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The first conductive sacrificial layer has a first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560), wherein the first portion (410, 510) is adjacent to the at least one defect (320), and the first portion (410, 510) and the at least one second portion (420, 530, 540, 550, 560) are electrically connected to each other (570, 580). method.

3. A method for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), the process includes generating at least one first sacrificial layer (400, 500) on the sample (205, 300, 1500) in proximity to the at least one defect (320) in order to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The proximity of the first portion (410, 510) to the at least one defect (320) includes at least one element of the group consisting of proximity of the first portion (410, 510) to the edge (325) of the at least one defect (320), partial covering of the at least one defect (320) by the first portion (410, 510), and complete covering of the at least one defect (320) by the first portion (410, 510), The method further includes the step of removing a portion of the first portion (410, 510) of the first sacrificial layer (400, 500) covering the at least one defect (320) before repairing the at least one defect (320). method.

4. A method for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), The repair of the at least one defect (320) includes the step of generating at least one first conductive sacrificial layer on the sample (205, 300, 1500) to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The proximity of the first portion (410, 510) to the at least one defect (320) includes at least one element of the group consisting of proximity of the first portion (410, 510) to the edge (325) of the at least one defect (320), partial covering of the at least one defect (320) by the first portion (410, 510), and complete covering of the at least one defect (320) by the first portion (410, 510), The method further includes the step of removing a portion of the first portion (410, 510) of the first conductive sacrificial layer covering the at least one defect (320) before repairing the at least one defect (320). method.

5. A method for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), The repair of the at least one defect (320) includes the step of generating at least one first sacrificial layer (400, 500, 1510) on the sample (205, 300, 1500) in proximity to the at least one defect (320) in order to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The operation to repair the at least one defect (320) includes selecting the material composition of the first portion (410, 510) of the first sacrificial layer (400, 500, 1510), the second etching gas, and / or at least one additive gas such that the etching rate of the etching process induced by the focused particle beam (227) is substantially the same for the at least one defect (320) and the first portion (410, 510) adjacent to the at least one defect (320). method.

6. A method for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), The repair of the at least one defect (320) includes the step of generating at least one first conductive sacrificial layer on the sample (205, 300, 1500) to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The operation to repair the at least one defect (320) includes selecting the material composition of the first portion (410, 510) of the first conductive sacrificial layer, the second etching gas, and / or at least one additive gas such that the etching rate of the etching process induced by the focused particle beam (227) is substantially the same for the at least one defect (320) and the first portion (410, 510) adjacent to the at least one defect (320). method.

7. A method for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), the process includes generating at least one first sacrificial layer (400, 500) on the sample (205, 300, 1500) in proximity to the at least one defect (320) in order to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The method further includes scanning the sample (205, 300, 1500) with the focused particle beam (227) to generate a defect map of the sample (205, 300, 1500). method.

8. A method for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), The repair of the at least one defect (320) includes the step of generating at least one first conductive sacrificial layer on the sample (205, 300, 1500) to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The method further includes scanning the sample (205, 300, 1500) with the focused particle beam (227) to generate a defect map of the sample (205, 300, 1500). method.

9. A method for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), the process includes generating at least one first sacrificial layer (400, 500) on the sample (205, 300, 1500) in proximity to the at least one defect (320) in order to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The method further includes the step of generating at least one first reference mark on the first sacrificial layer, The method further includes the step of determining at least one first reference distance (720, 730, 740, 750) between the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) and the at least one defect (320) before repairing the at least one defect (320). The method further includes the steps of generating at least one second reference mark (335, 355, 365, 385) on the sample (205, 300, 1500), and determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 355, 365, 385) and the at least one defect (320) before the generation of the first sacrificial layer (400, 500), The at least one second reference distance (340, 345, 370, 390) is greater than the at least one first reference distance (720, 730, 740, 750), method.

10. A method for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), The repair of the at least one defect (320) includes the step of generating at least one first conductive sacrificial layer on the sample (205, 300, 1500) to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The method further includes the step of generating at least one first reference mark on the first conductive sacrificial layer, The method further includes the step of determining at least one first reference distance (720, 730, 740, 750) between the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) and the at least one defect (320) before repairing the at least one defect (320), The method further includes the steps of generating at least one second reference mark (335, 355, 365, 385) on the sample (205, 300, 1500), and determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 355, 365, 385) and the at least one defect (320) before the generation of the first conductive sacrificial layer, The at least one second reference distance (340, 345, 370, 390) is greater than the at least one first reference distance (720, 730, 740, 750), method.

11. A method for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), the process includes generating at least one first sacrificial layer (400, 500) on the sample (205, 300, 1500) in proximity to the at least one defect (320) in order to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The method further includes the steps of generating at least one second reference mark (335, 355, 365, 385) on the sample (205, 300, 1500), and determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 355, 365, 385) and the at least one defect (320) before the generation of the first sacrificial layer (400, 500), The method further includes the step of correcting drift while performing at least one element of the group consisting of generating the first sacrificial layer (400, 500) and removing a portion of the first portion (410, 510) of the first sacrificial layer (400, 500) covering the at least one defect (320) from the at least one defect (320) by using the at least one second reference mark (335, 355, 365, 385) and the at least one second reference distance (340, 345, 370, 390), method.

12. A method for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), The repair of the at least one defect (320) includes the step of generating at least one first conductive sacrificial layer on the sample (205, 300, 1500) to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The method further includes the steps of generating at least one second reference mark (335, 355, 365, 385) on the sample (205, 300, 1500), and determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 355, 365, 385) and the at least one defect (320) before the generation of the first conductive sacrificial layer, The method further includes the step of correcting drift while performing at least one element of the group consisting of generating the first conductive sacrificial layer and removing from the at least one defect (320) a portion of the first portion (410, 510) of the first conductive sacrificial layer covering the at least one defect (320) by using the at least one second reference marks (335, 355, 365, 385) and the at least one second reference distance (340, 345, 370, 390), method.

13. The method according to claim 1, 3, 5, 7, 9, or 11, wherein the first sacrificial layer (400, 500) includes a first locally conductive sacrificial layer.

14. The method according to claim 2, 4, 6, 8, 10, or 12, wherein the first conductive sacrificial layer includes a first local conductive sacrificial layer.

15. The method according to claim 1, 3, 5, 7, or 11, further comprising the step of generating at least one first reference mark on the first sacrificial layer.

16. The method according to claim 2, 4, 6, 8, or 12, further comprising the step of generating at least one first reference mark on the first conductive sacrificial layer.

17. The method according to claim 1, further comprising the step of generating at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) on the at least one second portion (420, 530, 540, 550, 560) of the first sacrificial layer (400, 500) to compensate for drift of the at least one defect (320) during the repair of the at least one defect (320).

18. The method according to claim 2, further comprising the step of generating at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) on the at least one second portion (420, 530, 540, 550, 560) of the first conductive sacrificial layer to compensate for drift of the at least one defect (320) during the repair of the at least one defect (320).

19. The method according to claim 15, further comprising the step of determining at least one first reference distance (720, 730, 740, 750) between the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) and the at least one defect (320) before repairing the at least one defect (320).

20. The method according to claim 16, further comprising the step of determining at least one first reference distance (720, 730, 740, 750) between the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) and the at least one defect (320) before repairing the at least one defect (320).

21. The method according to claim 1, 2, 5, 6, 7, 8, 9, 10, 11, or 12, wherein the proximity of the first portion (410, 510) to the at least one defect (320) includes at least one element from the group consisting of proximity of the first portion (410, 510) to an edge (325) of the at least one defect (320), partial covering of the at least one defect (320) by the first portion (410, 510), and complete covering of the at least one defect (320) by the first portion (410, 510).

22. The method according to claim 17, wherein the at least one second portion (420, 530, 540, 550, 560) extends over the entirety of at least one scanning region (422, 432, 442, 452, 532, 545, 555, 565) of the focused particle beam (227) for detecting the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565).

23. The method according to claim 18, wherein the at least one second portion (420, 530, 540, 550, 560) extends over the entirety of at least one scanning region (422, 432, 442, 452, 532, 545, 555, 565) of the focused particle beam (227) for detecting the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565).

24. The method according to claim 1, 3, 5, 7, 9, or 11, wherein the step of generating the first sacrificial layer (400, 500) includes depositing the first sacrificial layer (400, 500) by the focused particle beam (227) in combination with at least one first precursor gas.

25. The method according to claim 2, 4, 6, 8, 10, or 12, wherein the step of generating the first conductive sacrificial layer includes depositing the first conductive sacrificial layer by the focused particle beam (227) in combination with at least one first precursor gas.

26. The method according to claim 15, wherein the step of generating the at least one first reference marks (425, 435, 445, 455, 535, 545, 555, 565) includes depositing the at least one first reference marks (425, 435, 445, 455, 535, 545, 555, 565) using the focused particle beam (227) in combination with at least one second precursor gas.

27. The method according to claim 16, wherein the step of generating the at least one first reference marks (425, 435, 445, 455, 535, 545, 555, 565) includes depositing the at least one first reference marks (425, 435, 445, 455, 535, 545, 555, 565) using the focused particle beam (227) in combination with at least one second precursor gas.

28. The method according to claim 1, 3, 5, 7, 9, or 11, wherein the at least one defect (320) includes a defect in excess material, and the method further includes the step of repairing the at least one defect (320) by at least partially passing through the first sacrificial layer (400, 500, 1510).

29. The method according to claim 2, 4, 6, 8, 10, or 12, wherein the at least one defect (320) includes a defect in excess material, and the method further includes the step of repairing the at least one defect (320) by at least partially passing through the first conductive sacrificial layer.

30. The method according to claim 1, wherein the first portion (410, 510) and the at least one second portion (420, 530, 540, 550, 560) of the first sacrificial layer (400, 500) have a lateral range such that the image cross-section containing the at least one defect (320) is distorted by 10% or less as a result of the operation to repair the at least one defect (320).

31. The method according to claim 2, wherein the first portion (410, 510) and the at least one second portion (420, 530, 540, 550, 560) of the first conductive sacrificial layer have a lateral range such that the image cross-section containing the at least one defect (320) is distorted by 10% or less as a result of an operation to repair the at least one defect (320).

32. The method according to claim 1, 3, 5, or 7, further comprising the steps of generating at least one second reference mark (335, 355, 365, 385) on the sample (205, 300, 1500), and determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 355, 365, 385) and the at least one defect (320) before the generation of the first sacrificial layer (400, 500).

33. The method according to claim 2, 4, 6, or 8, further comprising the steps of generating at least one second reference mark (335, 355, 365, 385) on the sample (205, 300, 1500), and determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 355, 365, 385) and the at least one defect (320) before the generation of the first conductive sacrificial layer.

34. The method according to claim 1, 3, 5, 7, 9, or 11, further comprising the steps of: generating at least one second sacrificial layer (330, 350, 360, 380) on the sample (205, 300, 1500); depositing at least one second reference mark (335, 355, 365, 385) on the at least one second sacrificial layer (330, 350, 360, 380); and determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 345, 365, 385) and the at least one defect (320) before the generation of the first sacrificial layer (400, 500).

35. The method according to claim 2, 4, 6, 8, 10, or 12, further comprising the steps of: generating at least one second sacrificial layer (330, 350, 360, 380) on the sample (205, 300, 1500); depositing at least one second reference mark (335, 355, 365, 385) on the at least one second sacrificial layer (330, 350, 360, 380); and determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 345, 365, 385) and the at least one defect (320) before the generation of the first conductive sacrificial layer.

36. The method according to claim 15, further comprising the step of integrally removing the first sacrificial layer (400, 500) and the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) from the sample (205, 300, 1500) using a wet chemical cleaning process and / or a mechanical cleaning process.

37. The method according to claim 16, further comprising the step of integrally removing the first conductive sacrificial layer and the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) from the sample (205, 300, 1500) using a wet chemical cleaning process and / or a mechanical cleaning process.

38. The method further includes the step of generating at least one first reference mark on the first sacrificial layer, The method according to claim 32, further comprising the step of integrally removing the first sacrificial layer (400, 500), the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565), and the at least one second reference mark (335, 355, 365, 385) from the sample (205, 300, 1500) using a wet chemical cleaning process and / or a mechanical cleaning process.

39. The method further includes the step of generating at least one first reference mark on the first conductive sacrificial layer, The method according to claim 33, further comprising the step of integrally removing the first conductive sacrificial layer, the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565), and the at least one second reference mark (335, 355, 365, 385) from the sample (205, 300, 1500) using a wet chemical cleaning process and / or a mechanical cleaning process.

40. A computer program comprising instructions that prompt a computer system (240) to perform a step according to any one of claims 1 to 12.

41. An apparatus (200) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), means for generating at least one first sacrificial layer (400, 500) on the sample (205, 300, 1500) in proximity to the at least one defect (320) in order to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The first sacrificial layer (400, 500) has a first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560), wherein the first portion (410, 510) is adjacent to the at least one defect (320), and the first portion (410, 510) and the at least one second portion (420, 530, 540, 550, 560) are electrically connected to each other (570, 580). Device (200).

42. An apparatus (200) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), means for generating at least one first conductive sacrificial layer on the sample (205, 300, 1500) to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The first conductive sacrificial layer has a first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560), wherein the first portion (410, 510) is adjacent to the at least one defect (320), and the first portion (410, 510) and the at least one second portion (420, 530, 540, 550, 560) are electrically connected to each other (570, 580). Device (200).

43. An apparatus (200) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), means for generating at least one first sacrificial layer (400, 500) on the sample (205, 300, 1500) in proximity to the at least one defect (320) in order to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The proximity of the first portion (410, 510) to the at least one defect (320) includes at least one element of the group consisting of proximity of the first portion (410, 510) to the edge (325) of the at least one defect (320), partial covering of the at least one defect (320) by the first portion (410, 510), and complete covering of the at least one defect (320) by the first portion (410, 510), The apparatus further comprises means for removing the first portion (410, 510) of the first sacrificial layer (400, 500) covering the at least one defect (320) before repairing the at least one defect (320). Device (200).

44. An apparatus (200) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), means for generating at least one first conductive sacrificial layer on the sample (205, 300, 1500) to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The proximity of the first portion (410, 510) to the at least one defect (320) includes at least one element of the group consisting of proximity of the first portion (410, 510) to the edge (325) of the at least one defect (320), partial covering of the at least one defect (320) by the first portion (410, 510), and complete covering of the at least one defect (320) by the first portion (410, 510), The apparatus further comprises means for removing a portion of the first portion (410, 510) of the first conductive sacrificial layer covering the at least one defect (320) before repairing the at least one defect (320). Device (200).

45. An apparatus (200) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), means for generating at least one first sacrificial layer (400, 500, 1510) on the sample (205, 300, 1500) in proximity to the at least one defect (320) in order to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The operation to repair the at least one defect (320) includes selecting the material composition of the first portion (410, 510) of the first sacrificial layer (400, 500, 1510), the second etching gas, and / or at least one additive gas such that the etching rate of the etching process induced by the focused particle beam (227) is substantially the same for the at least one defect (320) and the first portion (410, 510) adjacent to the at least one defect (320). Device (200).

46. An apparatus (200) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), means for generating at least one first conductive sacrificial layer on the sample (205, 300, 1500) to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The operation to repair the at least one defect (320) includes selecting the material composition of the first portion (410, 510) of the first conductive sacrificial layer, the second etching gas, and / or at least one additive gas such that the etching rate of the etching process induced by the focused particle beam (227) is substantially the same for the at least one defect (320) and the first portion (410, 510) adjacent to the at least one defect (320). Device (200).

47. An apparatus (200) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), means for generating at least one first sacrificial layer (400, 500) on the sample (205, 300, 1500) in proximity to the at least one defect (320) in order to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The apparatus further comprises means for scanning the samples (205, 300, 1500) with the focused particle beam (227) in order to generate a defect map of the samples (205, 300, 1500). Device (200).

48. An apparatus (200) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), means for generating at least one first conductive sacrificial layer on the sample (205, 300, 1500) to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The apparatus further comprises means for scanning the samples (205, 300, 1500) with the focused particle beam (227) in order to generate a defect map of the samples (205, 300, 1500). Device (200).

49. An apparatus (200) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), means for generating at least one first sacrificial layer (400, 500) on the sample (205, 300, 1500) in proximity to the at least one defect (320) in order to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The apparatus further comprises means for generating at least one first reference mark on the first sacrificial layer, The apparatus further comprises means for determining at least one first reference distance (720, 730, 740, 750) between the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) and the at least one defect (320) before repairing the at least one defect (320), The apparatus further comprises means for generating at least one second reference mark (335, 355, 365, 385) on the sample (205, 300, 1500), and means for determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 355, 365, 385) and the at least one defect (320) before the generation of the first sacrificial layer (400, 500), The at least one second reference distance (340, 345, 370, 390) is greater than the at least one first reference distance (720, 730, 740, 750), Device (200).

50. An apparatus (200) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), means for generating at least one first conductive sacrificial layer on the sample (205, 300, 1500) to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The apparatus further comprises means for generating at least one first reference mark on the first conductive sacrificial layer, The apparatus further comprises means for determining at least one first reference distance (720, 730, 740, 750) between the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) and the at least one defect (320) before repairing the at least one defect (320), The apparatus further comprises means for generating at least one second reference mark (335, 355, 365, 385) on the sample (205, 300, 1500), and means for determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 355, 365, 385) and the at least one defect (320) before the generation of the first conductive sacrificial layer, The at least one second reference distance (340, 345, 370, 390) is greater than the at least one first reference distance (720, 730, 740, 750), Device (200).

51. An apparatus (200) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), means for generating at least one first sacrificial layer (400, 500) on the sample (205, 300, 1500) in proximity to the at least one defect (320) in order to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The apparatus further includes means for generating at least one second reference mark (335, 355, 365, 385) on the sample (205, 300, 1500), and means for determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 355, 365, 385) and the at least one defect (320) before the generation of the first sacrificial layer (400, 500), The apparatus further includes means for compensating for drift while performing at least one element of the group consisting of generating the first sacrificial layer (400, 500) and removing a portion of the first portion (410, 510) of the first sacrificial layer (400, 500) covering the at least one defect (320) from the at least one defect (320) by using the at least one second reference mark (335, 355, 365, 385) and the at least one second reference distance (340, 345, 370, 390), Device (200).

52. An apparatus (200) for repairing at least one defect (320) in a sample (205, 300, 1500) using a focused particle beam (227), During the repair of the at least one defect (320), means for generating at least one first conductive sacrificial layer on the sample (205, 300, 1500) to compensate for the drift of the focused particle beam (227) with respect to the at least one defect (320), The apparatus further includes means for generating at least one second reference mark (335, 355, 365, 385) on the sample (205, 300, 1500), and means for determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 355, 365, 385) and the at least one defect (320) before the generation of the first conductive sacrificial layer, The apparatus further includes means for compensating for drift while performing at least one element of the group consisting of generating the first conductive sacrificial layer and removing from the at least one defect (320) a portion of the first conductive sacrificial layer covering the at least one defect (320) by using the at least one second reference marks (335, 355, 365, 385) and the at least one second reference distance (340, 345, 370, 390), Device (200).

53. The apparatus (200) according to claim 41, 43, 45, 47, 49, or 51, wherein the means for generating the first sacrificial layer includes means for generating the first locally conductive sacrificial layer.

54. The apparatus (200) according to claim 42, 44, 46, 48, 50, or 52, wherein the means for generating the first conductive sacrificial layer includes means for generating the first local conductive sacrificial layer.

55. The apparatus (200) according to any one of claims 41 to 52, further comprising an electron column having a single-stage capacitor system (218).

56. The apparatus (200) according to claim 41, 43, 45, 47, 49, or 51, wherein the means for generating the first sacrificial layers (400, 500) includes at least one electron beam (227), and the apparatus (200) is configured to focus the electron beam (227) to a diameter of less than 2 nm such that the kinetic energy of electrons colliding with the sample (205, 300, 1500) is less than 3000 eV.

57. The apparatus (200) according to claim 42, 44, 46, 48, 50, or 52, wherein the means for generating the first conductive sacrificial layer includes at least one electron beam (227), and the apparatus (200) is configured to focus the electron beam (227) to a diameter of less than 2 nm such that the kinetic energy of electrons colliding with the sample (205, 300, 1500) is less than 3000 eV.

58. The apparatus (200) according to any one of claims 41 to 52, wherein the local processing area of ​​the focused particle beam (227) of the apparatus (200) has a minimum diameter of less than 10 nm.

59. The apparatus (200) according to claim 55, wherein the electron column is configured to use a set of different apertures.

60. The apparatus (200) according to claim 59, further comprising a control unit (245) configured to control the beam current of the focused particle beam (227) by selecting one of the set of apertures.

61. Apparatus (200) according to any one of claims 41 to 52, configured to perform the method described in any one of claims 1 to 12.

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