Titanium dioxide-containing ruthenium chemical mechanical polishing slurry

A CMP composition with tailored titanium oxide particles and pH control effectively polishes ruthenium layers, enhancing removal rates and reducing pad fouling, thus overcoming the limitations of conventional CMP methods.

JP7864687B2Active Publication Date: 2026-05-25CMC MATERIALS INC
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
CMC MATERIALS INC
Filing Date
2021-08-02
Publication Date
2026-05-25

AI Technical Summary

Technical Problem

Conventional CMP slurries are unsuitable for effectively polishing ruthenium layers due to low chemical activity and pad fouling issues, leading to difficulty in achieving a suitable removal rate.

Method used

A chemical mechanical polishing composition comprising titanium oxide particles with a specific X:Y ratio of rutile to anatase in the X-ray diffraction pattern and a pH range of 7 to 10, optionally with a pH buffer and peroxide compound, is used to enhance ruthenium removal rate while minimizing pad fouling.

Benefits of technology

The composition achieves high ruthenium polishing rates with minimal pad contamination, addressing the limitations of existing CMP slurries.

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Abstract

A chemical-mechanical polishing composition comprising, or consisting essentially of, an aqueous liquid carrier; titanium oxide particles dispersed in the liquid carrier, the titanium oxide particles comprising rutile and anatase such that an X:Y ratio in an X-ray diffraction pattern of the titanium oxide particles is greater than about 0.05, where X represents the intensity of a peak in the X-ray diffraction pattern having a d-spacing of about 3.24 Å and Y represents the intensity of a peak in the X-ray diffraction pattern having a d-spacing of about 3.51 Å; and a pH in the range of about 7 to about 10. In some embodiments, the pK range is about 6 to about 9. a The method further comprises a pH buffer having the formula:
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