Structures including via / recessed power rail contact structure or via / rear-side power rail contact structure
The semiconductor structure addresses short-circuits by incorporating a dielectric spacer structure with a base and alternative dielectric spacers, reducing misalignment issues and improving structural integrity.
JP7868936B2Active Publication Date: 2026-06-02INTERNATIONAL BUSINESS MACHINE CORPORATION
Patent Information
- Authority / Receiving Office
- JP Β· JP
- Patent Type
- Patents
- Current Assignee / Owner
- INTERNATIONAL BUSINESS MACHINE CORPORATION
- Filing Date
- 2022-10-19
- Publication Date
- 2026-06-02
AI Technical Summary
Technical Problem
Conventional semiconductor structures face issues with short-circuits between via/buried power rail contact structures and gate ends due to lithographic misalignment during etching, leading to damaged dielectric spacers.
Method used
A semiconductor structure is designed with a dielectric spacer structure comprising a base dielectric spacer and an alternative dielectric spacer to mitigate short-circuits, featuring a via portion contacting an embedded power rail and a non-via portion contacting the source/drain region, with a two-layer dielectric cap structure to protect the spacer.
Benefits of technology
Reduces short-circuits between the VBPR contact structure and the gate end, enhancing the reliability and integrity of the semiconductor structure.
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Abstract
To provide a semiconductor structure in which a short circuit between a VBPR contact structure and a gate end is reduced.SOLUTION: A semiconductor structure is provided in which a via to buried power rail (VBPR) contact structure exists that has a via portion contacting a buried power rail and a non-via portion contacting a source / drain region of a first functional gate structure existing in a first device region. A dielectric spacer structure including a base dielectric spacer and a replacement dielectric spacer is, located between the VPBR contact structure and the first functional gate structure. The replacement dielectric spacer is composed of a gate cut trench dielectric material that also exists in a gate cut trench that is located between the first functional gate structure existing in the first device region, and a second functional gate structure that exists in a second device region. The replacement dielectric spacer replaces a damaged region of the dielectric spacer that originally exists during formation of a VBPR.SELECTED DRAWING: Figure 12C
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