Surface coatings for plasma processing chamber components

Abstract

To provide a method of coating a component of a plasma processing chamber.SOLUTION: An electrolytic oxidation coating is formed over the surface of the component, with the electrolytic oxidation coating comprising a plurality of pores, the electrolytic oxidation coating having a thickness, and at least some of the pores extending through the thickness of the electrolytic oxidation coating. An atomic layer deposition is deposited on the electrolytic oxidation coating. The atomic layer deposition comprises a plurality of cycles, where each cycle comprises pouring a first reactant, with the first reactant forming a first reactant layer in the pores of the electrolytic oxidation coating and the first reactant layer extending through the thickness of the electrolytic oxidation coating, stopping the pouring of the first reactant, pouring a second reactant, with the second reactant reacting with the first reactant layer, and stopping the pouring of the second reactant.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Cross-references to related applications This application claims the benefit of priority based on U.S. Patent Application No. 62 / 703,698, filed on July 26, 2018, which is hereby incorporated by reference in its entirety for all purposes.

[0002] This disclosure relates to the manufacture of semiconductor devices, and more particularly, to plasma chamber components used in the manufacture of semiconductor devices.

Background Art

[0003] During semiconductor wafer processing, a plasma processing chamber is used to process semiconductor devices. The components of the plasma processing chamber are exposed to plasma and arc discharges. Plasma and arc discharges can degrade the components.

Summary of the Invention

[0004] To achieve the above, in accordance with an object of the present disclosure, a method for coating a component of a plasma processing chamber is provided. An anodic oxidation coating is formed on the surface of the component. The anodic oxidation coating has a plurality of pores, the anodic oxidation coating has a thickness, and at least some of the plurality of pores extend through the thickness of the anodic oxidation coating. An atomic layer deposition process is used to deposit an atomic layer deposit on the anodic oxidation coating. The atomic layer deposition process comprises a plurality of cycles, each cycle comprising flowing a first reactant, the first reactant forming a first reaction layer within the pores of the anodic oxidation coating, the first reaction layer extending through the thickness of the anodic oxidation coating, stopping the flow of the first reactant, flowing a second reactant, the second reactant reacting with the first reaction layer, and stopping the flow of the second reactant.

[0005] In another embodiment, a component adapted for use in a semiconductor processing chamber is provided. An electrolytic oxidation coating is present on the surface of the component body, the electrolytic oxidation coating has a plurality of pores, the electrolytic oxidation coating has a thickness, and at least a portion of the plurality of pores extends through the thickness of the electrolytic oxidation coating. An atomic layer deposition fills the plurality of pores of the electrolytic oxidation coating.

[0006] In another embodiment, a method is provided for coating components of a plasma processing chamber. A ceramic coating is formed on the surface of the component, the ceramic coating having a plurality of pores, the ceramic coating having a thickness, and at least a portion of the plurality of pores extending through the thickness of the ceramic coating. An atomic layer deposition is deposited on the ceramic coating using an atomic layer deposition process, the atomic layer deposition process comprising a plurality of cycles, each cycle comprising: flowing in a first reaction gas, the first reaction gas forming a first reaction layer within the pores of the ceramic coating, the first reaction layer extending through the thickness of the ceramic coating; stopping the flow of the first reaction gas; flowing in a second reaction gas, the second reaction gas reacting with the first reaction layer; and stopping the flow of the second reaction gas. A portion of the atomic layer deposition is polished off.

[0007] In another embodiment, a component adapted for use in a semiconductor processing chamber is provided. A ceramic coating is present on the surface of the component body, the ceramic coating has multiple pores, and the ceramic coating has thickness, with at least some of the multiple pores extending through the thickness of the ceramic coating. An atomic layer deposition fills the multiple pores of the ceramic coating. The surface of the atomic layer deposition is polished.

[0008] In another embodiment, a method for coating components of a plasma processing chamber is provided. An electrolytic oxidation coating is formed on the surface of the component. A thermal spray coating is deposited on top of the electrolytic oxidation coating.

[0009] In another embodiment, components adapted for use in semiconductor processing chambers are provided. An electrolytic oxidation coating is applied to the surface of the component body. A thermal spray coating is applied to the electrolytic oxidation coating.

[0010] The above-mentioned and other features of this disclosure will be described in detail in a detailed description with reference to the attached drawings. [Brief explanation of the drawing]

[0011] The attached drawings illustrate this disclosure for illustrative purposes only, not for limitation. In these attached drawings, similar components are denoted by the same reference numerals.

[0012] [Figure 1] A high-level flowchart of one embodiment.

[0013] [Figure 2A] A schematic diagram showing components processed according to one embodiment. [Figure 2B] A schematic diagram showing components processed according to one embodiment. [Figure 2C] A schematic diagram showing components processed according to one embodiment.

[0014] [Figure 3] A schematic diagram showing an etching reactor that can be used in one embodiment.

[0015] [Figure 4] A high-level flowchart of another embodiment.

[0016] [Figure 5A] A schematic diagram showing components processed according to one embodiment. [Figure 5B] A schematic diagram showing components processed according to one embodiment. [Figure 5C] A schematic diagram showing components processed according to one embodiment.

[0017] [Figure 6] High-level flowchart of another embodiment.

[0018] [Figure 7A] Schematic diagram showing components being processed according to one embodiment. [Figure 7B] Schematic diagram showing components being processed according to one embodiment.

Mode for Carrying Out the Invention

[0019] Hereinafter, a detailed description of the present disclosure will be given with reference to some embodiments illustrated in the accompanying drawings. In the following description, numerous specific details are set forth in order to facilitate a complete understanding of the present disclosure. However, as will be apparent to those skilled in the art, the present disclosure can be practiced without some or all of these specific details. Also, in order to avoid unnecessarily obscuring the present disclosure, detailed descriptions of well-known processing steps and / or structures have been omitted.

[0020] For purposes of understanding, FIG. 1 shows a high-level flowchart of a process utilized in one embodiment. In one example embodiment, an electrolytic oxide coating is formed on the surface of a component (step 104). Electrolytic oxidation is also known as plasma electrolytic oxidation (PEO) and electrolytic plasma oxidation (EPO) or micro-arc oxidation (MAO). Electrolytic oxidation is a method of producing an oxide coating on a metal. Electrolytic oxidation uses an AC voltage at a higher potential than anodic oxidation to cause a discharge, which in the case of PEO / EPO causes a plasma discharge that provides an electrolytic oxide coating of a crystalline metal oxide layer having interconnected and surface-connected pores extending through the thickness of the electrolytic oxide coating.

[0021] Figure 2A is a schematic cross-sectional view showing a component body 204 having an electrolytic oxidation coating 208. The electrolytic oxidation coating 208 has a plurality of pores 212, some of which form openings. The openings extend through the thickness of the electrolytic oxidation coating 208 to the surface of the component body 204. The pores 212 are not drawn to scale and are shown enlarged in width to better illustrate the function of this embodiment. Furthermore, the pores 212 may be even more irregular and curved. The schematic diagram is intended to facilitate a better understanding of the function of this embodiment. In this embodiment, the component body 204 is formed of aluminum. In another embodiment, the component body 204 is formed of anodized aluminum or a ceramic body. In this embodiment, the electrolytic oxidation coating 208 contains alumina. In another embodiment, the electrolytic oxidation coating 208 contains at least one oxide or fluorinated oxide of aluminum, titanium, or magnesium.

[0022] If the component body 204 is ceramic and / or not simply metallic, a metal layer may be deposited on the surface of the component body 204. The metal layer may be deposited by physical vapor deposition, electrochemical vapor deposition from a solution containing metal ions, or by 3D printing metal directly onto the surface of the component body 204. Electrolytic oxidation is performed on the deposited metal layer.

[0023] In the plasma electrolytic treatment of the aluminum component body 204, a high voltage of at least 200 volts is applied. The high voltage exceeds the dielectric breakdown potential of the aluminum oxide film, causing discharge and localized plasma. The high bias, discharge, and plasma cause localized high temperatures. These conditions can lead to sintering, melting, and densification of the resulting metal oxide. In one embodiment, the thickness of the electrolytic oxidation coating 208 is greater than 25 μm.

[0024] A surface treatment is applied to the electrolytic oxidation coating 208 (step 106). In this example, the surface treatment is performed by exposing the electrolytic oxidation coating 208 to an ozone stream at a temperature in the range of 150°C to 320°C. This surface treatment provides some degree of cleaning and prepares the surface for the subsequent ALD treatment. It is important that the surface is free of hydrocarbons, water, or other contaminants, and that the surface has reactive oxygen radicals to absorb reactants with the metal precursor. In an alternative embodiment, the surface treatment provides multiple purging cycles of an inert gas at high temperatures to burn off hydrocarbons and remove water from the surface.

[0025] Next, an atomic layer deposition (ALD) process is provided (step 108). The atomic layer deposition process (step 108) comprises multiple cycles. In this example, each cycle comprises a step of supplying a first reactant (step 112), a step of purging the first reactant (step 114), a step of supplying a second reactant (step 116), and a step of purging the second reactant (step 118). In this embodiment, the component body 204 is maintained at a temperature between approximately 150°C and 320°C for the deposition of an aluminum oxide (Al2O3) ALD film to coat the surface of the pore 212 in the electrolytic oxidation coating 208.

[0026] In this embodiment, the step of supplying the first reactant (step 112) includes supplying 500 to 200 sccm of trimethylaluminum (Al2(CH3)6). The amount of trimethylaluminum varies depending on the size of the reactor and the number of components 204 simultaneously arranged in the reactor. The first reactant forms a first reaction layer, i.e., an aluminum-containing layer, on the surface of the electrolytic oxidation coating 208, including the surface of the pore 212. The flow of the first reactant is stopped after 10 to 30 seconds. 10 to 30 seconds is usually sufficient to form a monolayer of absorbed aluminum (Al) and methyl radicals (CH3) on the surface of the component body 204.

[0027] The step of purging the first reactant (step 114) includes the step of introducing nitrogen. The nitrogen flow replaces the first reactant remaining in the reactor.

[0028] In this embodiment, the step of supplying the second reactant (step 116) includes the step of supplying a stream of water vapor. The water vapor reacts with the first reaction layer by hydrolyzing the aluminum in the first reaction layer. The stream of the second reactant is stopped after 10 to 30 seconds.

[0029] The step of purging the second reactant (step 118) includes the step of introducing nitrogen. The nitrogen flow replaces the second reactant remaining in the reactor.

[0030] Each of the first and second reactants is absorbed and reacts on the surface of the constituent body 204 in a cycle defined as a half-cycle. The absorption is limited to one atomic layer. These two reactants form a thin layer of ALD film (e.g., Al2O3) with a thickness of approximately 1 Å. The process is repeated until the desired film thickness is achieved. Figure 2B is a schematic cross-sectional view showing the constituent body 204 with an electrolytic oxidation coating 208 on its surface after multiple cycles of the atomic layer deposition process (step 108). The atomic layer deposition 216 is deposited. In this example, after multiple cycles, the ALD 216 can only partially fill two pores 212a and 212b due to their width. The third pore 212c is completely filled by the ALD 216 because it is narrower. The ALD 216 extends through the thickness of the electrolytic oxidation coating 208 to the constituent body 204. ALD216 coats the exposed portions of the component body 204 so that the surface of the component body 204 is not exposed. The ALD treatment is continued and repeated until all of the pores 212 are completely filled (step 108). Figure 2C is a schematic cross-sectional view showing the component body 204 with the electrolytic oxidation coating 208 after the pores 212 have been completely filled by ALD216.

[0031] The component body 204 is mounted inside the plasma processing chamber (step 120). The plasma processing chamber is used to process the substrate (step 124). Plasma is generated inside the chamber to process the substrate. Such processing may be a process of etching the substrate. The process of processing the substrate (step 124) involves exposing the component body 204 to the plasma.

[0032] Figure 3 is a schematic diagram showing a plasma processing chamber 300 with an attached component body 204. The plasma processing chamber 300 comprises a confinement ring 302, an upper electrode 304, a lower electrode 308, a gas source 310, a liner 362, and an exhaust pump 320. In this example, the component body 204 is the liner 362. Within the plasma processing chamber 300, a wafer 366 is placed on the lower electrode 308. An edge ring 312 surrounds the wafer 366. The lower electrode 308 is equipped with a substrate chuck mechanism suitable for holding the wafer 366 (e.g., an electrostatic chuck, a mechanical clamp, etc.). The reactor upper part 328 incorporates the upper electrode 304, which is located directly opposite the lower electrode 308. The upper electrode 304, the lower electrode 308, and the confinement ring 302 define a confined plasma space 340.

[0033] Gas is supplied to the confined plasma space 340 through the gas inlet 343 by the gas source 310. The gas is exhausted from the confined plasma space 340 through the confinement ring 302 and exhaust port by the exhaust pump 320. A radio frequency (RF) power supply 348 is electrically connected to the lower electrode 308.

[0034] The chamber wall 352 surrounds the component body 204, the confinement ring 302, the upper electrode 304, and the lower electrode 308. The component body 204 helps prevent the gas or plasma passing through the confinement ring 302 from coming into contact with the chamber wall 352. A controller 335 is controllably connected to the RF power supply 348, the exhaust pump 320, and the gas source 310. The plasma processing chamber 300 may be a CCP (capacitively coupled plasma) reactor or an ICP (inductively coupled plasma) reactor. Other plasma sources such as surface waves, microwaves, or electron cyclotron resonance (ECR) may be used.

[0035] Next-generation dielectric memory tools operate at higher RF power than previous tools. Such next-generation dielectric memory tools exhibited arcing faults between the electrostatic chuck (ESC) baseplate used for the lower electrode 308 and various edge hardware on the chamber (edge ​​ring 312, ground ring, and coupling ring, etc.). Arcing faults accounted for over 50% of all failures in the next-generation tools. To prevent such failures, the standoff voltage of the baseplate or other components must be increased.

[0036] Without being bound by theory, it is conceivable that during plasma processing, the chemiadsorbed material within the pores 212 of the electrolytic oxidation coating 208 provides conductive pathways. These conductive pathways can promote arc discharge. Filling the pores 212 with atomic layer deposition 216 prevents such arc discharge and leads to improved dielectric breakdown performance. The ALD material is preferably high-resistance and non-conductive. Furthermore, filling the pores 212 with atomic layer deposition 216 closes the pores 212 to prevent penetration, thus preventing plasma radicals from reaching the constituent body 204.

[0037] The resulting electrolytic oxidation coating 208 is resistant to chemical degradation and arc discharge. In some embodiments, the ALD treatment (step 108) improves the ability of the electrolytic oxidation coating 208 to withstand arc discharge by up to 200% per unit thickness. Experimental data showed that an electrolytic oxidation coating 208 deposited using PEO to a thickness of 50 μm had a standoff voltage of approximately 1.7 kV (kilovolts) without ALD 216. The same electrolytic oxidation coating 208 had a standoff voltage of approximately 3.0-4.0 kV after the addition of ALD 216. Therefore, the addition of ALD 216 increases the dielectric strength by approximately twofold. As a result, the plasma processing chamber 300 equipped with such components 204 has fewer defects. Furthermore, the failure rate of such a system is reduced, thus extending the interval between replacements of the component bodies 204.

[0038] In various embodiments, the ALD treatment (step 108) may be used to form a dielectric atomic layer deposition 216 of a metal-containing material such as ceria, zirconia, lanthanum oxide, yttria (Y2O3), alumina (Al2O3), aluminum nitride (AlN), aluminum carbide (Al2C3), or yttrium iodide (Y2I3). In some embodiments, combinations of these film compositions may be used, for example, Y2O3 may be inserted together with Al2O3 to enhance the fluorine corrosion resistance of the electrolytic oxidation coating 208 in the plasma treatment chamber 300. Y2O3 is produced using a yttrium precursor (e.g., yttrium cyclometopentadiene 3) with water vapor. In various embodiments, the dielectric layer of the metal-containing material is a metal oxide, metal nitride, metal carbide, or metal iodide. In another embodiment, fluorides of the above materials (such as AlF3, AlOF, yttrium fluoride (YF3), or yttrium fluoride oxide (YOF)) may be formed. In some embodiments, the first reactant may be trimethylaluminum and the second reactant may be water vapor. In various embodiments, the ALD treatment (step 108) may provide alternating layers of different materials. For example, alternating layers of alumina and yttria may be provided in one embodiment. In various embodiments, the first purge (step 114) and / or the second purge (step 118) may be omitted.

[0039] The electrolytic oxidation coating 208 may have a density less than 98%, and as a result, the pores 212 occupy more than 2% of the volume of the electrolytic oxidation coating 208, providing a porosity greater than 2%. Preferably, the electrolytic oxidation coating 208 has a thickness of 25 μm or more and less than 500 μm. In another exemplary embodiment, the thickness is between 50 μm and 400 μm. In another exemplary embodiment, the electrolytic oxidation coating 208 has a thickness of 200 μm or more. In another exemplary embodiment, the electrolytic oxidation coating 208 has a thickness of 300 μm or more. For the electrolytic oxidation coating 208 formed by PEO, the porosity may be greater than 20%.

[0040] In various embodiments, the component body 204 may be other parts of the plasma processing chamber, such as a confinement ring, edge ring 312, electrostatic chuck, grounding ring, chamber liner, door liner, or other component 204. The plasma processing chamber 300 may be a dielectric processing chamber or a conductive processing chamber. In some embodiments, one or more surfaces, but not all, are coated. Various embodiments provide an electrolytic oxidation coating 208 that enables planes, cornered radii, high aspect ratio holes, and helium channels. In some embodiments, the component body 204 may be a part formed of aluminum. In other embodiments, the component body 204 may be an aluminum part with a surface coating. The surface coating can reduce the temperature mismatch between the aluminum and the electrolytic oxidation coating 208.

[0041] Further processing may be performed on the component body 204 before it is installed in the plasma processing chamber 300 (step 120) or before it is used in the plasma processing chamber 300 (step 124). For example, a second coating may be sprayed onto the electrolytic oxidation coating 208. The second coating may have pores. However, since the electrolytic oxidation coating 208 between the second coating and the component body 204 has pores 212 filled with ALD 216, arc discharge and chemical degradation are prevented.

[0042] In one embodiment, the component body 204 is aluminum, and the electrolytic oxidation coating 208 is formed by providing an electrolytic oxidation coating 208 with a thickness of 0.0005 inches (0.00127 mm) to 0.005 inches (0.0127 mm). In another embodiment, the electrolytic oxidation coating 208 has a thickness of 0.001 inches (0.0254 mm) to 0.040 inches (1.016 mm). In various embodiments, the pore 212 has a width of less than 1 micron. In some embodiments, using an aluminum-containing reactant for atomic layer deposition, gas permeability greater than 1000:1 is provided at temperatures above 300°C. This means that the ratio of the distance the gas can travel through the pore 212 to the width of the pore 212 is greater than 1000:1.

[0043] In various embodiments, the first reactant may be an organic molecule bound to a metal ligand at one end, and the second reactant may be an oxidizing agent (such as water vapor or ozone). The organic molecule is reactive at temperatures below the melting point of the material forming the constituent body 204. For example, the organic molecule decomposes or is absorbed at temperatures below 50°C.

[0044] Various embodiments provide a smooth surface. The resulting surface may be machined. Although ALD treatment is a very slow process, it provides a high-quality layer. In various embodiments, a faster method is used to form a more porous, i.e., lower-quality electrolytic oxidation coating 208 than the coating formed by pure ALD treatment alone, thereby providing a layer faster than using pure ALD treatment alone. Using ALD treatment, pores 212 are filled and quality is improved (step 108). As a result, a layer with porosity close to that of a layer formed by pure ALD treatment alone is deposited faster than using pure ALD treatment alone. Since pores 212 are filled with a material having similar or identical properties to the electrolytic oxidation coating 208, there is no thermal expansion mismatch between the electrolytic oxidation coating 208 and the filling material of pores 212 deposited by the ALD treatment (step 108). The electrolytic oxidation coating 208 and ALD 216 form a polymer-free protective layer. Polymers degrade relatively easily in the plasma. The resulting layer is more corrosion-resistant. In various embodiments, when pore 212 is filled with ALD216, the ALD216 stretches through the thickness of the electrolytic oxidation coating 208, and as a result, the component body 204 is not exposed. In various embodiments, the ALD216 covers (caps) the top of pore 212 so that the component body 204 is not exposed.

[0045] In an exemplary embodiment, the ALD216 fills the pore 212 with minimal pockets. In this embodiment, the component body 204 is not exposed. In other embodiments, the ALD216 may have pockets. In this embodiment, the ALD216 extends to and covers the component body 204, so that the component body 204 is not exposed.

[0046] In the above examples and other embodiments, the ALD treatment (step 108) is a non-plasma treatment. In other embodiments, the ALD treatment (step 108) uses ozone instead of water vapor. Various embodiments may be carried out without the surface treatment step (step 106).

[0047] To facilitate understanding, Figure 4 shows a high-level flowchart of a process used in another embodiment. In one embodiment, a ceramic coating is formed on the surface of a component (step 404). In this example, the ceramic coating is deposited using plasma spraying (step 404). Figure 5A is a schematic cross-sectional view showing a component body 504 with a ceramic coating 508. The ceramic coating 508 is plasma sprayed onto the surface of the component body 504. The ceramic coating 508 has a plurality of pores 512, some of which form openings. The openings extend through the thickness of the ceramic coating 508 to the surface of the component body 504. The pores 512 are not drawn to scale and are shown enlarged in width to better illustrate the function of this embodiment. Furthermore, the pores 512 may be even more irregular and curved. The schematic diagram is intended to facilitate a better understanding of the function of this embodiment. In this embodiment, the component body 504 is formed of anodized aluminum. In another embodiment, the component body 504 is formed of aluminum or a ceramic body. In this embodiment, the ceramic coating 508 contains alumina. In other embodiments, the ceramic coating 508 contains at least one of alumina, yttrium oxide (yttria), aluminum carbide, yttrium ceria iodide, zirconia, fluorinated yttria, aluminum nitride, or lanthanum oxide. In various embodiments, the ceramic coating 508 is applied by one or more of plasma electrolytic oxidation (PEO), anodizing, or ceramic spraying.

[0048] Plasma spraying is a type of thermal spraying. For plasma spraying, a torch is formed by applying an electric potential between two electrodes, causing ionization of accelerated gas (plasma). This type of torch can quickly reach temperatures of several thousand degrees Celsius, allowing it to melt high-melting-point materials such as ceramics. Particles of the desired material are introduced into the jet. The particles are melted and accelerated toward the substrate so that the molten or plasticized material coats the surface of the constituent body 504. The material cools, forming a solid, conformal ceramic coating 508. Plasma spraying is different from vapor deposition. Vapor deposition uses evaporated material instead of spraying the molten material used in plasma spraying.

[0049] In this embodiment, the thickness of the ceramic coating 508 is greater than 25 μm. In an example recipe for plasma spraying the ceramic coating 508, a carrier gas is extruded from a nozzle through an arch cavity. Within the cavity, the cathode and anode include a portion of the arc cavity. The cathode and anode are maintained at a large direct current (DC) bias voltage until the carrier gas begins to ionize and form a plasma. The hot ionizing gas is then extruded from the nozzle to form a torch. Fluid ceramic particles, several tens of micrometers in size, are injected into the chamber near the nozzle. These particles are heated by the hot ionizing gas in the plasma torch to a temperature above the melting point of the ceramic. The jet of plasma and molten ceramic is then directed towards the component body 504. The particles collide with the component body 504, flatten out, and cool to form the ceramic coating 508.

[0050] A surface treatment is applied to the ceramic coating 508 (step 406). In this example, the surface treatment is performed by exposing the ceramic coating 508 to an ozone stream at a temperature in the range of 150°C to 320°C. This surface treatment provides some degree of cleaning and prepares the surface for the subsequent ALD treatment. It is important that the surface is free of hydrocarbons or other contaminants and that the surface has reactive oxygen radicals to absorb the first reactants with the metal precursor.

[0051] Next, an atomic layer deposition (ALD) process is provided (step 408). The atomic layer deposition process (step 408) comprises multiple cycles. In this example, each cycle comprises a step of supplying a first reactant (step 412), a step of purging the first reactant (step 414), a step of supplying a second reactant (step 416), and a step of purging the second reactant (step 418). In this embodiment, the component body 504 is maintained at a temperature between approximately 150°C and 320°C for the deposition of an aluminum oxide (Al2O3) ALD film to coat the surface of the pore 512 in the ceramic coating 508. In this embodiment, the step of supplying the first reactant (step 412) includes supplying 500 to 200 sccm of trimethylaluminum (Al2(CH3)6). The amount of trimethylaluminum varies depending on the size of the reactor and the number of component bodies 504 simultaneously placed in the reactor. The first reactant forms a first reaction layer, i.e., an aluminum-containing layer, on the surface of the ceramic coating 508, including the surface of pore 512. The flow of the first reactant is stopped after 10 to 30 seconds. 10 to 30 seconds is usually sufficient to form a monolayer of absorbed aluminum (Al) and methyl radicals (CH3) on the surface of the constituent body 504.

[0052] The step of purging the first reactant (step 414) includes the step of flushing with nitrogen. In this embodiment, the step of supplying the second reactant (step 416) includes the step of supplying a stream of water vapor. The water vapor reacts with the first reaction layer by hydrolyzing the aluminum in the first reaction layer. The stream of the second reactant is stopped after 10 to 30 seconds. The step of purging the second reactant (step 418) includes the step of flushing with nitrogen. Each of these reactants is absorbed and reacts on the surface of the component body 504 in a cycle defined as a half-cycle. The absorption is limited to one atomic layer. These two reactants form a thin layer of ALD film (for example, Al2O3, about 1 Å thick). The ALD treatment is continued until all of the pores 512 are completely filled (step 408). Figure 5B is a schematic cross-sectional view showing the component body 504 with the ceramic coating 508 after the pores 512 have been completely filled with ALD 516.

[0053] Next, the surface is polished (step 420). In this example, the polishing process may also be performed to remove any unfilled portions of the ALD 516 and to further polish the surface of the component body 504 to provide a smooth polished ALD surface.

[0054] The component body 504 is mounted in the plasma processing chamber (step 424). The plasma processing chamber is used to process the substrate (step 428). Plasma is generated in the chamber to process the wafer 366. Such processing may be an etching process of the stack on the wafer 366. Processing the wafer 366 (step 428) exposes the component body 504 to the plasma.

[0055] In this embodiment, polishing of the ALD516 and the component body 504 provides a smooth finished surface. Experiments have shown that, in plasma spraying, the coating without ALD516 has a dielectric strength of approximately 20 volts / micron. The same coating, after the addition of ALD516, has a dielectric strength of approximately 40 volts / micron or more. Therefore, the addition of ALD516 increases the dielectric strength by approximately four times.

[0056] Figure 6 shows a high-level flowchart of a process used in another embodiment. In one embodiment, an electrolytic oxidation coating is formed on the surface of a component (step 604). Figure 7A is a schematic cross-sectional view showing a component body 704 with an electrolytic oxidation coating 708. The electrolytic oxidation coating 708 has a plurality of pores 712, some of which form openings. The openings extend through the thickness of the electrolytic oxidation coating 708 to the surface of the component body 704. The pores 712 are not drawn to scale and are shown enlarged in width to better illustrate the function of this embodiment. Furthermore, the pores 712 may be even more irregular and curved. The schematic diagram is intended to facilitate a better understanding of the function of this embodiment. In this embodiment, the component body 704 is made of aluminum. In this embodiment, the electrolytic oxidation coating 708 comprises at least one oxide or fluorinated oxide of aluminum, titanium, or magnesium.

[0057] A thermal spray coating is deposited on the electrolytic oxidation coating 708 (step 612). Figure 7B is a schematic cross-sectional view showing the component body 704 with the electrolytic oxidation coating 708 after the thermal spray coating 716 has been deposited on the electrolytic oxidation coating 708. The thermal spray coating 716 may partially fill the pores 712 in the electrolytic oxidation coating 708. The thermal spray coating 716 covers the pores 712 in the electrolytic oxidation coating 708. The thermal spray coating 716 has pores 720. Generally, the pores 720 of the thermal spray coating 716 are not aligned with the pores 712 of the electrolytic oxidation coating 708. However, some of the pores 720 of the thermal spray coating 716 may be aligned with some of the pores 712 of the electrolytic oxidation coating 708. Plasma spray coatings must be dense to protect the substrate and thick to obtain a high dielectric breakdown voltage. Such a combination is prone to cracking during temperature cycling. Alternatively, if a plasma spray coating is applied on PEO, a higher cumulative breakdown voltage can be achieved by applying a relatively low-density spray coating on top of it, as PEO is much more stable during temperature cycling. The resulting coating will be less prone to cracking.

[0058] While the present disclosure has been described above with reference to several embodiments, various substitutes, replacements, modifications, and equivalents exist within the scope of this disclosure. It should also be noted that there are numerous other ways of carrying out the methods and apparatus of this disclosure. Therefore, the attached claims should be interpreted as encompassing all substitutes, replacements, and equivalents that fall within the true spirit and scope of this disclosure. [Application Example 1] A method for coating components of a plasma processing chamber, An electrolytic oxidation coating is formed on the surface of the aforementioned component, the electrolytic oxidation coating has a plurality of pores, the electrolytic oxidation coating has a thickness, and at least a portion of the plurality of pores extends through the thickness of the electrolytic oxidation coating. An atomic layer deposition process is used to deposit an atomic layer material onto the electrolytic oxidation coating, and the atomic layer deposition process comprises multiple cycles, each cycle consisting of: A first reactant is poured in, and the first reactant forms a first reaction layer within the pore of the electrolytic oxidation coating, and the first reaction layer extends through the thickness of the electrolytic oxidation coating. Stop the infusion of the first reactant, The second reactant is poured in, and the second reactant reacts with the first reaction layer. This includes stopping the infusion of the second reactant, A method that includes [a certain feature]. [Example 2] A method according to Example 1, wherein the electrolytic oxidation coating comprises at least one oxide or fluorinated oxide of aluminum, titanium, or magnesium. [Application Example 3] A method according to Application Example 1, wherein the component comprises at least one of aluminum, anodized aluminum, or ceramic. [Application Example 4] The method according to Application Example 1, wherein the electrolytic oxidation coating is thicker than 25 μm. [Application Example 5] A method according to Application Example 1, wherein the porosity of the electrolytic oxidation coating is greater than 2%. [Example 6] A method according to Example 1, wherein the atomic layer deposited material comprises one of ceria, zirconia, lanthanum oxide, yttria, alumina, aluminum nitride, aluminum carbide, or yttrium iodide. [Application Example 7] A method according to Application Example 1, wherein the atomic layer deposited material contains alumina. [Example 8] A method according to Example 7, wherein the first reactant is trimethylaluminum and the second reactant is water vapor or ozone. [Application Example 9] A method according to Application Example 1, wherein the deposition of an atomic layer material onto the electrolytic oxidation coating is a process that does not utilize plasma. [Example 10] A method according to Example 1, further comprising performing a surface treatment after forming the electrolytic oxidation coating and before depositing the atomic layer deposition material. [Example 11] A method according to Example 10, wherein the surface treatment comprises exposing the electrolytic oxidation coating to a stream of ozone or purging it with heat and an inert gas. [Example 12] A method according to Example 1, wherein the atomic layer deposition comprises at least two alternating layers of alumina, yttria, ceria, zirconia, or lanthanum oxide. [Application Example 13] A method according to Application Example 1, wherein each cycle of the atomic layer deposition process involves depositing a single layer. [Example 14] A method according to Example 1, wherein the first reactant comprises an organic molecule equipped with a metal ligand. [Example 15] A method according to Example 14, wherein the second reactant comprises water vapor or ozone. [Application Example 16] A method according to Application Example 1, wherein the component includes an electrostatic chuck. [Example 17] A method according to Example 1, further comprising polishing the atomic layer deposited material. [Application Example 18] A component suitable for use in a semiconductor processing chamber, The main component and, The electrolytic oxidation coating on the surface of the main body of the component, the electrolytic oxidation coating having a plurality of pores, the electrolytic oxidation coating having a thickness, and at least a portion of the plurality of pores extending through the thickness of the electrolytic oxidation coating, The atomic layer deposited material filling the plurality of pores of the electrolytic oxidation coating, A component comprising: [Example 19] A component according to Example 18, wherein the electrolytic oxidation coating comprises at least one oxide or fluorinated oxide of aluminum, titanium, or magnesium. [Application Example 20] A component according to Application Example 18, wherein the component body comprises at least one of aluminum, anodized aluminum, or ceramic. [Application Example 21] A component according to Application Example 18, wherein the electrolytic oxidation coating is thicker than 25 μm. [Application Example 22] A component according to Application Example 18, wherein the porosity of the electrolytic oxidation coating is greater than 2%. [Application Example 23] A component according to Application Example 18, wherein the atomic layer deposited material includes one of ceria, zirconia, lanthanum oxide, yttria, alumina, aluminum nitride, aluminum carbide, or yttrium iodide. [Application Example 24] A method for coating components of a plasma processing chamber, A ceramic coating is formed on the surface of the aforementioned component, the ceramic coating has a plurality of pores, the ceramic coating has a thickness, and at least a portion of the plurality of pores extends through the thickness of the ceramic coating. An atomic layer deposition process is used to deposit an atomic layer material onto the ceramic coating, and the atomic layer deposition process comprises multiple cycles, each cycle consisting of: A first reaction gas is introduced, and the first reaction gas forms a first reaction layer within the pores of the ceramic coating, and the first reaction layer extends through the thickness of the ceramic coating. The inflow of the first reaction gas is stopped, A second reaction gas is introduced, and the second reaction gas reacts with the first reaction layer. This includes stopping the flow of the second reaction gas, A portion of the atomic layer deposited material is polished off. A method that includes [a certain feature]. [Example 25] A method according to Example 24, wherein the ceramic comprises at least one of yttria, ceria, zirconia, fluorinated yttria, aluminum nitride, alumina, or lanthanum oxide. [Example 26] A method according to Example 24, wherein the component comprises at least one of aluminum, anodized aluminum, or ceramic. [Example 27] The method according to Example 24, wherein the ceramic coating is thicker than 25 μm. [Application Example 28] A method relating to Application Example 24, wherein the porosity of the ceramic coating is greater than 2%. [Application Example 29] A method according to Application Example 24, wherein the atomic layer deposition forms a deposition of one of ceria, zirconia, lanthanum oxide, yttria, alumina, aluminum nitride, aluminum carbide, or yttrium iodide. [Example 30] A method according to Example 24, wherein the deposition of the ceramic coating comprises at least one of plasma electrolytic oxidation, anodizing, or ceramic spraying. [Application Example 31] A component suitable for use in a semiconductor processing chamber, The main component and, The ceramic coating on the surface of the main body of the component, the ceramic coating having a plurality of pores, the ceramic coating having a thickness, and at least a portion of the plurality of pores extending through the thickness of the ceramic coating, Atomic layer deposited material filling the plurality of pores of the ceramic coating, The polished surface of the atomic layer deposited material, A component comprising: [Example 32] A component according to Example 31, wherein the ceramic comprises at least one of yttria, ceria, zirconia, fluorinated yttria, aluminum nitride, alumina, or lanthanum oxide. [Application Example 33] A component according to Application Example 31, wherein the component body comprises at least one of aluminum, anodized aluminum, or ceramic. [Application Example 34] A component according to Application Example 31, wherein the ceramic coating is thicker than 25 μm. [Application Example 35] A component according to Application Example 31, wherein the porosity of the ceramic coating is greater than 2%. [Application Example 36] A component according to Application Example 31, wherein the atomic layer deposited material includes one of ceria, zirconia, lanthanum oxide, yttria, alumina, aluminum nitride, aluminum carbide, or yttrium iodide. [Application Example 37] A method for coating components of a plasma processing chamber, An electrolytic oxidation coating is formed on the surface of the aforementioned component. A thermal spray coating is deposited onto the electrolytic oxidation coating. A method that includes [a certain feature]. [Example 38] A method according to Example 37, wherein the electrolytic oxidation coating comprises at least one oxide or fluorinated oxide of aluminum, titanium, or magnesium. [Example 39] A method according to Example 37, wherein the component comprises at least one of aluminum, anodized aluminum, or ceramic. [Example 40] A method according to Example 37, wherein the thermal spray coating comprises at least one of yttria, ceria, zirconia, fluorinated yttria, aluminum nitride, alumina, or lanthanum oxide. [Application Example 41] A component suitable for use in a semiconductor processing chamber, The main component and, The electrolytic oxidation coating on the surface of the aforementioned component body, The thermal spray coating on the electrolytic oxidation coating, A component comprising: [Example 42] A component according to Example 41, wherein the electrolytic oxidation coating comprises at least one oxide or fluorinated oxide of aluminum, titanium, or magnesium. [Application Example 43] A component according to Application Example 41, wherein the component body comprises at least one of aluminum, anodized aluminum, or ceramic. [Example 44] A component according to Example 41, wherein the thermal spray coating comprises at least one of yttria, ceria, zirconia, fluorinated yttria, aluminum nitride, alumina, or lanthanum oxide.

Claims

1. A method for coating components of a plasma processing chamber, A ceramic coating is formed on the surface of the aforementioned component, the ceramic coating has a plurality of pores, the ceramic coating has a thickness, and at least a portion of the plurality of pores extends through the thickness of the ceramic coating. An atomic layer deposition process is used to deposit an atomic layer material onto the ceramic coating, and the atomic layer deposition process comprises multiple cycles, each cycle consisting of: A first reaction gas is introduced, and the first reaction gas forms a first reaction layer within the pores of the ceramic coating, and the first reaction layer extends through the thickness of the ceramic coating. The inflow of the first reaction gas is stopped, A second reaction gas is introduced, and the second reaction gas reacts with the first reaction layer. This includes stopping the flow of the second reaction gas, A portion of the atomic layer deposited material is polished off. A method that includes [a certain feature].

2. A method according to claim 1, wherein the ceramic coating comprises at least one of yttria, ceria, zirconia, fluorinated yttria, aluminum nitride, alumina, or lanthanum oxide.

3. A method according to claim 1, wherein the component comprises at least one of aluminum, anodized aluminum, or ceramic.

4. A method according to claim 1, wherein the ceramic coating is thicker than 25 μm.

5. A method according to claim 1, wherein the porosity of the ceramic coating is greater than 2%.

6. A method according to claim 1, wherein the atomic layer deposition is formed of one of ceria, zirconia, lanthanum oxide, yttria, alumina, aluminum nitride, aluminum carbide, or yttrium iodide.

7. A method according to claim 1, wherein the deposition of the ceramic coating comprises at least one of plasma electrolytic oxidation, anodizing, or ceramic spraying.

8. Components suitable for use in semiconductor processing chambers, The main component and, The ceramic coating on the surface of the main body of the component, the ceramic coating having a plurality of pores, the ceramic coating having a thickness, and at least a portion of the plurality of pores extending through the thickness of the ceramic coating, An atomic layer deposition material that fills the plurality of pores of the ceramic coating, wherein the atomic layer deposition material increases the dielectric strength of the constituent element, The polished surface of the atomic layer deposited material, A component comprising:

9. A component according to claim 8, wherein the ceramic coating comprises at least one of yttria, ceria, zirconia, fluorinated yttria, aluminum nitride, alumina, or lanthanum oxide.

10. A component according to claim 8, wherein the component body comprises at least one of aluminum, anodized aluminum, or ceramic.

11. A component according to claim 8, wherein the ceramic coating is thicker than 25 μm.

12. A component according to claim 8, wherein the porosity of the ceramic coating is greater than 2%.

13. A component according to claim 8, wherein the atomic layer deposited material includes one of ceria, zirconia, lanthanum oxide, yttria, alumina, aluminum nitride, aluminum carbide, or yttrium iodide.

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