Film deposition method, film deposition apparatus, and susceptor

Abstract

The present invention is a film forming method comprising: a step of forming a raw material mist by atomizing a raw material solution; a step of forming a gas mixture by mixing the raw material mist and a carrier gas; a step of placing a substrate on a placement portion of a susceptor; a step of forming a film due to a thermal reaction on the substrate, by supplying the gas mixture from an atomization means to the substrate; and a step of discharging the gas mixture by a discharging means after forming the film, the film forming method being characterized in that, in the step of forming the film due to a thermal reaction on the substrate by supplying the gas mixture from the atomization means to the substrate, at least a portion of the gas mixture is supplied from a flat portion that is adjacent to the placement portion and has a surface roughness of 200 μm or less to the surface of the substrate. Thereby, a film forming method is provided that makes it possible to manufacture a high-quality film on a large-diameter substrate surface in a uniform and stable manner.

Claims

1. The steps include atomizing the raw material solution to form a raw material mist, The steps include mixing the raw material mist with a carrier gas to form a mixed gas, The steps include: placing the substrate on the mounting section of the susceptor, The steps include supplying the mixture from the atomizing means to the substrate and forming a film on the substrate by a thermal reaction, A film formation method comprising the step of exhausting the mixture after film formation using an exhaust means, A method for forming a film, characterized in that, in the step of supplying the aforementioned mixture from an atomizing means to the substrate and forming a film on the substrate by a thermal reaction, a portion of the mixture is supplied to the surface of the substrate from a smooth portion adjacent to the aforementioned deposition portion and having a surface roughness of 200 μm or less, and another portion of the mixture is supplied directly to the surface of the substrate.

2. The film formation method according to claim 1, characterized in that the surface roughness is 150 μm or less.

3. The film formation method according to claim 1 or 2, characterized in that the height difference between the surface of the smooth portion and the surface of the substrate placed on the aforementioned mounting portion is -1 mm or more and +1 mm or less.

4. The method for forming a film according to claim 1 or 2, characterized in that the angle between the surface of the smooth portion and the direction in which the mixed gas flows into the smooth portion is 0° or more and 60° or less.

5. A carrier gas supply means for supplying carrier gas, A atomizing means for atomizing a raw material solution to generate a raw material mist, A film deposition unit that supplies a mixture of the raw material mist and the carrier gas to a substrate to perform film deposition, A film deposition apparatus comprising a heating means capable of heating the substrate, The film-forming section has a susceptor equipped with a mounting section for placing the substrate, The susceptor is provided with a smooth section adjacent to the aforementioned mounting section through which at least a portion of the mixed gas flows. The surface roughness of the smooth portion is 200 μm or less. A film-forming apparatus characterized in that a portion of the mixture is supplied from the smooth portion to the surface of the substrate, and the other portion of the mixture is supplied directly to the surface of the substrate.

6. The film deposition apparatus according to claim 5, characterized in that the surface roughness is 150 μm or less.

7. The film forming apparatus according to claim 5 or 6, characterized in that the height difference between the surface of the smooth portion and the surface of the substrate placed on the aforementioned mounting portion is -1 mm or more and +1 mm or less.

8. The film-forming apparatus according to claim 5 or 6, characterized in that the angle between the surface of the smooth portion and the direction in which the mixed gas flows into the smooth portion is 0° or more and 60° or less.

9. A film deposition apparatus comprising a carrier gas supply means for supplying a carrier gas, an atomizing means for atomizing a raw material solution to generate a raw material mist, a film deposition unit for supplying a mixture of the raw material mist and the carrier gas to a substrate for film deposition, and a heating means capable of heating the substrate, wherein the susceptor has a mounting unit on which the substrate is placed, Adjacent to the mounting portion, a smooth portion is provided through which at least a portion of the mixed gas flows. The surface roughness of the smooth portion is 200 μm or less. A susceptor characterized in that a portion of the mixture is supplied from the smooth portion to the surface of the substrate, and the other portion of the mixture is supplied directly to the surface of the substrate.

10. The susceptor according to claim 9, characterized in that the surface roughness is 150 μm or less.

11. The susceptor according to claim 9, characterized in that the surface roughness of the smooth portion is 200 μm or less, and the height difference between the surface of the smooth portion and the surface of the substrate placed on the aforementioned mounting portion is -1 mm or more and +1 mm or less.

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