Semiconductor equipment

Abstract

To provide a liquid crystal display device suitable for a thin film transistor using an oxide semiconductor.SOLUTION: In a liquid crystal display device having a thin film transistor including an oxide semiconductor layer, a film having a function of attenuating light intensity of transmitting visible light is used for an interlayer film which at least covers the oxide semiconductor layer. As the film having the function of attenuating light intensity of the transmitting visible light, a colored layer can be used and a chromatic translucent resin layer may be used. Alternatively, an interlayer film is formed to include a chromatic translucent resin layer and a light-shielding layer, and the light-shielding layer may be used as a film having a function of attenuating light intensity of transmitting visible light. One of a pixel electrode layer and a common electrode layer, formed on an upper part, has an opening pattern, and the other formed on a lower part is tabular.SELECTED DRAWING: Figure 1

Claims

1. The transistor on the top of the circuit board, A first insulating film having a region covering the transistor, A colored layer provided above the first insulating film and having a region that overlaps with the oxide semiconductor layer having the channel formation region of the transistor, A chromatic resin layer provided above the first insulating film, located above the colored layer, and having a first region overlapping with the colored layer, A pixel electrode is provided above the colored layer and above the chromatic resin layer, and is electrically connected to the oxide semiconductor layer. A second insulating film having a region in contact with the lower surface of the oxide semiconductor layer, The first electrode is provided below the second insulating film and has a region that overlaps with the pixel electrode, The first region does not have a region that overlaps with the oxide semiconductor layer. The first electrode does not have a region that overlaps with the oxide semiconductor layer. The first insulating film has a region in contact with the upper surface of the oxide semiconductor layer and a region in contact with the upper surface of the second electrode which functions as one of the source electrode and drain electrode of the transistor. The oxide semiconductor layer comprises indium, gallium, and zinc. Each of the first insulating film and the second insulating film has silicon oxide, A semiconductor device wherein the colored resin layer has a region in which the light transmittance is lower than that of the oxide semiconductor layer and the film thickness is greater than that of the colored layer.

2. The transistor on the top of the circuit board, The aforementioned transistor and an electrically connected gate wire, A first insulating film having a region covering the transistor, A colored layer provided above the first insulating film and having a region that overlaps with the oxide semiconductor layer having the channel formation region of the transistor, A chromatic resin layer provided above the first insulating film, located above the colored layer, and having a first region overlapping with the colored layer, A pixel electrode is provided above the colored layer and above the chromatic resin layer, and is electrically connected to the oxide semiconductor layer. A second insulating film having a region in contact with the lower surface of the oxide semiconductor layer, The first electrode is provided below the second insulating film and has a region that overlaps with the pixel electrode, The first electrode does not have a region that overlaps with the oxide semiconductor layer. The first insulating film has a region in contact with the upper surface of the oxide semiconductor layer and a region in contact with the upper surface of the second electrode which functions as one of the source electrode and drain electrode of the transistor. The first region does not have a region that overlaps with the oxide semiconductor layer. The gate line has a second region that overlaps with the oxide semiconductor layer and a third region that does not overlap with the oxide semiconductor layer. The colored layer has a region that overlaps with the third region, The oxide semiconductor layer comprises indium, gallium, and zinc. Each of the first insulating film and the second insulating film has silicon oxide, A semiconductor device wherein the colored resin layer has a region in which the light transmittance is lower than that of the oxide semiconductor layer and the film thickness is greater than that of the colored layer.

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