Method for manufacturing oxide sintered bodies
The method for producing oxide sintered bodies using high-purity In, Ga, and Zn oxides with controlled manufacturing processes effectively reduces impurities, enhancing the performance of TFTs and sputtering targets by achieving low impurity levels and improved physical properties.
Patent Information
- Application Number
- JP2024570664
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2023-08-01
- Filing Date
- 2024-07-29
- Publication Date
- 2026-06-12
- Estimated Expiration
- 2044-07-29
AI Technical Summary
Existing oxide sintered bodies contain high levels of impurities, which are not adequately addressed by current manufacturing methods, and stricter purity requirements are needed for advanced semiconductor applications.
A method involving the use of high-purity (6N or higher) oxides of In, Ga, and Zn as raw materials, combined with oxide grinding and mixing media free of impurities, ultrapure water as a dispersion medium, and specific casting and surface treatment processes to minimize impurity incorporation, particularly using dry ice blasting to remove surface contaminants.
The method significantly reduces impurity content in oxide sintered bodies, achieving a total impurity level of 10 ppm or less, enabling high-performance TFTs and sputtering targets with improved properties such as low bulk resistance and high relative density.