Adhesive composition, laminate, method for manufacturing a laminate, and method for manufacturing a semiconductor substrate

Abstract

Provided is an adhesive composition which is suitable for temporarily bonding a bumped semiconductor substrate to a supporting substrate and which gives an adhesion layer that can inhibit or reduce bump deformation caused by an external burden, e.g., heating, and that exhibits a high etching rate.　The adhesive composition includes an adhesive ingredient (S), wherein the adhesive ingredient (S) includes a polyorganosiloxane ingredient (A) that cures upon hydrosilylation reaction, the polyorganosiloxane ingredient (A) including a polymer (V) represented by formula (V) having a weight-average molecular weight of 60,000 or higher. (n, indicating the number of repeating units, is a positive integer.)

Description

[Technical Field] 【0001】 The present invention relates to an adhesive composition, a laminate, a method for manufacturing a laminate, and a method for manufacturing a semiconductor substrate. [Background technology] 【0002】 Conventionally, semiconductor wafers have been integrated in a two-dimensional planar direction. To achieve even greater integration, there is a need for semiconductor integration technology that integrates (stacks) in a three-dimensional direction as well. This three-dimensional stacking is a technology that integrates multiple layers while connecting them with through silicon vias (TSVs). When integrating multiple layers, the side opposite to the circuit surface (i.e., the back surface) of each wafer to be integrated is thinned by polishing, and the thinned semiconductor wafers are stacked. The semiconductor wafer (also simply called a wafer here) is bonded to a support in order to be polished using a polishing device. The bonding used in this process is called temporary bonding because it must be easily removed after polishing. This temporary bonding must be easily removed from the support, as applying excessive force during removal can cause the thinned semiconductor wafer to cut or deform. Therefore, it must be easily removed to prevent such damage. However, it is undesirable for the bonding to detach or shift due to polishing stress during the back surface polishing of the semiconductor wafer. Consequently, the required performance of temporary bonding is to withstand the stress during polishing and to be easily removed after polishing. For example, the required properties include high stress (strong adhesive strength) in the planar direction during polishing and low stress (weak adhesive strength) in the longitudinal direction during removal. 【0003】 Under the circumstances described above, the inventors have reported adhesive compositions that can achieve such temporary adhesion, including a component that hardens by a hydrosilylation reaction along with a component such as polydimethylsiloxane (see, for example, Patent Documents 1 and 2). 【0004】 On the other hand, semiconductor wafers are electrically connected to semiconductor chips via bump balls made of conductive materials such as metal, and by using chips equipped with such bump balls, the size of semiconductor packaging can be reduced. In this regard, bump balls made of metals such as copper and tin can be damaged or deformed by external loads such as heating and pressure applied during the semiconductor substrate processing process. With the recent advancements in the semiconductor field, there has been a constant demand for technologies that can mitigate or prevent such deformation caused by heating and pressure. Furthermore, after the semiconductor wafer and support are separated, the adhesive layer remaining on the semiconductor wafer is dissolved and removed, for example, by wet etching using a cleaning agent composition (cleaning solution). In this process, it is desirable that the adhesive layer exhibits a high dissolution and removal rate, i.e., a high etching rate. [Prior art documents] [Patent Documents] 【0005】 [Patent Document 1] International Publication No. 2017 / 221772 [Patent Document 2] International Publication No. 2018 / 216732 [Overview of the project] [Problems that the invention aims to solve] 【0006】 The present invention has been made in view of the above circumstances, and aims to provide an adhesive composition that can suitably temporarily bond a bumped semiconductor substrate and a support substrate, can suppress or mitigate bump deformation due to external loads such as heating, and provides an adhesive layer exhibiting a high etching rate. [Means for solving the problem] 【0007】 In order to solve the above problems, the present inventors conducted intensive studies. As a result, in an adhesive composition containing a polyorganosiloxane component (A) that cures by a hydrosilylation reaction, by including a polymer (V) represented by a specific formula and having a weight average molecular weight of 60,000 or more as the polyorganosiloxane component (A), it was found that the above problems can be solved, and the present invention was completed. 【0008】 That is, the present invention includes the following aspects. [1] An adhesive composition containing an adhesive component (S), where the adhesive component (S) contains a polyorganosiloxane component (A) that cures by a hydrosilylation reaction, and the polyorganosiloxane component (A) is represented by the following formula (V) and contains a polymer (V) having a weight average molecular weight of 60,000 or more: an adhesive composition. [Chemical formula] (n represents the number of repeating units and is a positive integer.) [2] The adhesive composition according to [1], wherein the adhesive composition contains the adhesive component (S) and a release agent component (B) containing a polyorganosiloxane. [3] The polyorganosiloxane component (A) contains a siloxane unit (Q unit) represented by SiO2, R R [[ID=​​​​​​​​​​​​​​​​​​​ The polyorganosiloxane (A1) is represented by siloxane units (Q' units) expressed as SiO2, R 1 'R 2 'R 3 'SiO 1 / 2 Siloxane units (M' units) are represented as R 4 'R 5 'SiO 2 / 2 Siloxane units (D' units) and R are represented by these units. 6 'SiO 3 / 2 A polyorganosiloxane (a1) containing one or more units selected from the group consisting of siloxane units (T' units) represented by , and at least one unit selected from the group consisting of M' units, D' units and T' units, and a siloxane unit (Q'' unit) represented by SiO2, R 1 "R 2 "R 3 SiO 1 / 2 Siloxane units (M'' units) are expressed as R 4 "R 5 SiO 2 / 2 Siloxane units (D'' units) and R 6 SiO 3 / 2 A polyorganosiloxane (a2) comprising one or more units selected from the group consisting of siloxane units (T'' units) represented by the above, and at least one unit selected from the group consisting of M'' units, D'' units and T'' units (however, R 1 '~R 6 ' represents a group that bonds to a silicon atom, and each independently represents an optionally substituted alkyl group or an optionally substituted alkenyl group, R 1 '~R 6 At least one of ' is an alkenyl group which may be substituted, R 1 "~R 6 " represents a group or atom bonded to a silicon atom, and each independently represents an optionally substituted alkyl group or hydrogen atom, but R 1 "~R 6 (At least one of them is a hydrogen atom), The adhesive composition according to [1] or [2], wherein the polyorganosiloxane (a1) contains the polymer (V). [4] The adhesive composition according to any one of [1] to [3], wherein the weight-average molecular weight of the polymer (V) is 100,000 or more. [5] The adhesive composition according to [2], wherein the complex viscosity of the release agent component (B) is 3400 (Pa·s) or more. [6] The adhesive composition according to [5], wherein the release agent component (B) is a polyorganosiloxane represented by the following formula (M1). [ka] (n4 represents the number of repeating units and is a positive integer.) [7] A laminate comprising an adhesive layer interposed between a bumped semiconductor substrate and a support substrate and in contact with the semiconductor substrate, A laminate in which the adhesive layer is a layer formed from any of the adhesive compositions described in [1] to [6]. [8] [7] A step in which the semiconductor substrate in the laminate described above is processed, A step of separating the support substrate and the processed semiconductor substrate, A method for manufacturing a semiconductor substrate, including the method described above. A method for manufacturing a laminate, comprising producing the laminate described in [9] [7], The process of forming an adhesive coating layer that provides the aforementioned adhesive layer, The process involves heating the adhesive coating layer to form the adhesive layer, A method for manufacturing a laminate, including the following: [Effects of the Invention] 【0009】 According to the present invention, it is possible to provide an adhesive composition that can suitably temporarily bond a bumped semiconductor substrate and a support substrate, suppress or mitigate bump deformation due to external loads such as heating, and provide an adhesive layer exhibiting a high etching rate. [Brief explanation of the drawing] 【0010】 [Figure 1A] This is a schematic cross-sectional view of an example of a laminate. [Figure 1B]This is a schematic cross-sectional view of another example of a laminate. [Figure 2A] This is a diagram (part 1) illustrating one method of manufacturing laminates and thinned wafers. [Figure 2B] This is a diagram (part 2) illustrating one method of manufacturing laminates and thinned wafers. [Figure 2C] This is a diagram (part 3) illustrating one method of manufacturing laminates and thinned wafers. [Figure 2D] This is a diagram (part 4) illustrating one method of manufacturing laminates and thinned wafers. [Figure 2E] This is a diagram (part 5) illustrating one method of manufacturing laminates and thinned wafers. [Figure 2F] This is a diagram (part 6) illustrating one method of manufacturing laminates and thinned wafers. [Modes for carrying out the invention] 【0011】 (Adhesive composition) The adhesive composition of the present invention is a composition that can be suitably used to form an adhesive layer for temporary bonding in order to process semiconductor substrates. The adhesive composition of the present invention contains an adhesive component (S). The adhesive component (S) contains a polyorganosiloxane component (A) that hardens through a hydrosilylation reaction. The polyorganosiloxane component (A) contains a polymer (V) represented by the following formula (V) and having a weight-average molecular weight of 60,000 or more. [ka] (n is a positive integer representing the number of repeating units.) 【0012】 The adhesive composition of the present invention preferably contains an adhesive component (S) and, in addition to the adhesive component (S), a release agent component (B) containing a polyorganosiloxane. Furthermore, in addition to the adhesive component (S) and the release agent component (B), the adhesive composition of the present invention may also contain other components, such as a solvent, to adjust the viscosity of the adhesive composition. As shown in the following examples, the adhesive composition of the present invention can suppress bump deformation and form an adhesive layer exhibiting a high etching rate. 【0013】 <Adhesive component (S)> The adhesive component contains a polyorganosiloxane component (A) that hardens through a hydrosilylation reaction. In a more preferred embodiment of the present invention, the polyorganosiloxane component (A) is a siloxane unit (Q unit) represented by SiO2, R 1 R 2 R 3 SiO 1 / 2 Siloxane units (M units) are expressed as R 4 R 5 SiO 2 / 2 Siloxane units (D units) and R are represented by these units. 6 SiO 3 / 2 The material contains a polyorganosiloxane (A1) comprising one or more units selected from the group consisting of siloxane units (T units) represented by , and a platinum group metal catalyst (A2). Furthermore, polyorganosiloxane (A1) is represented by SiO2 as a siloxane unit (Q' unit), R 1 'R 2 'R 3 'SiO 1 / 2 Siloxane units (M' units) are represented as R 4 'R 5 'SiO 2 / 2 Siloxane units (D' units) and R are represented by these units. 6 'SiO 3 / 2 A polyorganosiloxane (a1) containing one or more units selected from the group consisting of siloxane units (T' units) represented by , and at least one unit selected from the group consisting of M' units, D' units and T' units, and a siloxane unit (Q'' unit) represented by SiO2, R 1 "R 2 "R 3 SiO 1 / 2Siloxane units (M'' units) are expressed as R 4 "R 5 SiO 2 / 2 Siloxane units (D'' units) and R 6 SiO 3 / 2 The polyorganosiloxane (a2) comprises one or more units selected from the group consisting of siloxane units (T'' units) represented by , and at least one unit selected from the group consisting of M'' units, D'' units, and T'' units. 【0014】 R 1 ~R 6 This group or atom is bonded to a silicon atom and independently represents an optionally substituted alkyl group, an optionally substituted alkenyl group, or a hydrogen atom. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, heteroaryl groups, and the like. 【0015】 R 1 '~R 6 ' represents a group that bonds to a silicon atom, and each independently represents an optionally substituted alkyl group or an optionally substituted alkenyl group, R 1 '~R 6 At least one of the ' groups is an alkenyl group which may be substituted. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, heteroaryl groups, etc. 【0016】 R 1 "~R 6 " represents a group or atom bonded to a silicon atom, and each independently represents an optionally substituted alkyl group or hydrogen atom, but R 1 "~R 6 At least one of the atoms is a hydrogen atom. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, heteroaryl groups, etc. 【0017】 The alkyl group may be linear, branched, or cyclic, but linear or branched alkyl groups are preferred. The number of carbon atoms is not particularly limited, but is usually 1 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less. 【0018】 Specific examples of substituted linear or branched alkyl groups include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, tert-butyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl group, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, 3-methyl-n-pentyl group, 4-methyl-n-pentyl group Examples of suitable groups include the methyl group, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl-n-butyl group, 2,2-dimethyl-n-butyl group, 2,3-dimethyl-n-butyl group, 3,3-dimethyl-n-butyl group, 1-ethyl-n-butyl group, 2-ethyl-n-butyl group, 1,1,2-trimethyl-n-propyl group, 1,2,2-trimethyl-n-propyl group, 1-ethyl-1-methyl-n-propyl group, and 1-ethyl-2-methyl-n-propyl group, but are not limited to these. The number of carbon atoms is usually 1 to 14, preferably 1 to 10, and more preferably 1 to 6. Among these, the methyl group is particularly preferred. 【0019】 Specific examples of cyclic alkyl groups that may be substituted include cyclopropyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, cyclopentyl group, 1-methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3-dimethyl-cyclopropyl group, 1-ethyl-cyclopropyl group, 2-ethyl-cyclopropyl group, cyclohexyl group, 1-methyl-cyclopentyl group, 2-methyl-cyclopentyl group, 3-methyl-cyclopentyl group, 1-ethyl-cyclobutyl group, 2-ethyl-cyclobutyl group, 3-ethyl-cyclobutyl group, 1,2-dimethyl-cyclobutyl group, 1,3-dimethyl-cyclobutyl group, 2,2-dimethyl-cyclobutyl group, 2,3-dimethyl-cyclobutyl group, 2,4-dimethyl-cyclobutyl group, 3,3-dimethyl-cyclobutyl group Examples of cycloalkyl groups include cycloalkyl groups such as ethyl-cyclobutyl group, 1-n-propyl-cyclopropyl group, 2-n-propyl-cyclopropyl group, 1-i-propyl-cyclopropyl group, 2-i-propyl-cyclopropyl group, 1,2,2-trimethyl-cyclopropyl group, 1,2,3-trimethyl-cyclopropyl group, 2,2,3-trimethyl-cyclopropyl group, 1-ethyl-2-methyl-cyclopropyl group, 2-ethyl-1-methyl-cyclopropyl group, 2-ethyl-2-methyl-cyclopropyl group, and 2-ethyl-3-methyl-cyclopropyl group, as well as bicycloalkyl groups such as bicyclobutyl group, bicyclopentyl group, bicyclohexyl group, bicycloheptyl group, bicyclooctyl group, bicyclononyl group, and bicyclodecyl group, but are not limited to these. The number of carbon atoms is usually 3 to 14, preferably 4 to 10, and more preferably 5 to 6. 【0020】 The alkenyl group may be linear or branched, and its carbon number is not particularly limited, but is usually 2 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less. 【0021】 Specific examples of substituted linear or branched alkenyl groups include, but are not limited to, vinyl, allyl, buttenyl, and pentenyl groups. Their carbon number is typically 2 to 14, preferably 2 to 10, and more preferably 1 to 6. Among these, ethenyl and 2-propenyl groups are particularly preferred. Specific examples of substituted cyclic alkenyl groups include, but are not limited to, cyclopentenyl and cyclohexenyl. The number of carbon atoms is usually 4 to 14, preferably 5 to 10, and more preferably 5 to 6. 【0022】 As mentioned above, polyorganosiloxane (A1) contains polyorganosiloxane (a1) and polyorganosiloxane (a2). The alkenyl groups in polyorganosiloxane (a1) and the hydrogen atoms (Si-H groups) in polyorganosiloxane (a2) form a cross-linked structure through a hydrosilylation reaction by a platinum group metal catalyst (A2), and then harden. As a result, a hardened film is formed. 【0023】 Polyorganosiloxane (a1) contains one or more units selected from the group consisting of Q' units, M' units, D' units, and T' units, and also contains at least one unit selected from the group consisting of M' units, D' units, and T' units. As polyorganosiloxane (a1), two or more polyorganosiloxanes that satisfy these conditions may be used in combination. 【0024】 The polymer represented by the following formula (V) is classified as polyorganosiloxane (a1) in the polyorganosiloxane (A1) described above. The adhesive composition of the present invention contains as an essential component a polymer (V) represented by the following formula (V) and having a weight-average molecular weight of 60,000 or more. In other words, the weight-average molecular weight of the polymer represented by formula (V) contained in the adhesive composition of the present invention is 60,000 or more. The adhesive composition of the present invention may contain, in addition to the polymer represented by formula (V), one or more polyorganosiloxanes included in polyorganosiloxane (a1). Polymer (V) will be explained in detail below. [ka] (n is a positive integer representing the number of repeating units.) 【0025】 Two or more preferred combinations selected from the group consisting of Q' units, M' units, D' units, and T' units include, but are not limited to, (Q' units and M' units), (D' units and M' units), (T' units and M' units), and (Q' units, T' units, and M' units). 【0026】 Furthermore, when polyorganosiloxane (a1) contains two or more polyorganosiloxanes, the combinations of (Q' units and M' units) and (D' units and M' units), (T' units and M' units) and (D' units and M' units), and (Q' units, T' units and M' units) and (T' units and M' units) are preferred, but are not limited to these. 【0027】 Polyorganosiloxane (a2) contains one or more units selected from the group consisting of Q'' units, M'' units, D'' units, and T'' units, and also contains at least one unit selected from the group consisting of M'' units, D'' units, and T'' units. Polyorganosiloxane (a2') may be a combination of two or more polyorganosiloxanes that satisfy these conditions. 【0028】 Two or more preferred combinations selected from the group consisting of Q" units, M" units, D" units, and T" units include, but are not limited to, (M" units and D" units), (Q" units and M" units), and (Q" units, T" units, and M" units). 【0029】 Polyorganosiloxane (a1) is composed of siloxane units in which an alkyl group and / or an alkenyl group is bonded to the silicon atom, R 1 '~R 6 The proportion of alkenyl groups in the total substituents represented by ' is preferably 0.1 to 50.0 mol%, more preferably 0.5 to 30.0 mol%, and the remaining R 1 '~R 6 ' can be an alkyl group. 【0030】 Polyorganosiloxane (a2) is composed of siloxane units in which an alkyl group and / or a hydrogen atom are bonded to the silicon atom, R 1 "~R 6 The proportion of hydrogen atoms in all substituents and substituted atoms represented by " is preferably 0.1 to 50.0 mol%, more preferably 10.0 to 40.0 mol%, and the remaining R 1 "~R 6 " can be an alkyl group. 【0031】 When component (A) contains (a1) and (a2), in a preferred embodiment of the present invention, the molar ratio of alkenyl groups contained in polyorganosiloxane (a1) to hydrogen atoms constituting the Si-H bond contained in polyorganosiloxane (a2) is in the range of 1.0:0.5 to 1.0:0.66. 【0032】 The polymer (V) is represented by formula (V), and its weight-average molecular weight is 60,000 or more, more preferably 100,000 or more. Typically, its weight-average molecular weight is between 60,000 and 1,000,000, more preferably 100,000 and 1,000,000. In polyorganosiloxane (a1), the weight-average molecular weight of polyorganosiloxanes other than polymer (V) is not particularly limited, but is usually 500 to 1,000,000, and is preferably 5,000 to 50,000 from the viewpoint of reproducibly realizing the effects of the present invention. The weight-average molecular weight of polyorganosiloxane (a2) is not particularly limited, but is usually between 500 and 1,000,000, and is preferably between 5,000 and 50,000 from the viewpoint of reproducibly realizing the effects of the present invention. In this invention, the weight-average molecular weight, number-average molecular weight, and degree of dispersion of polyorganosiloxane can be measured, for example, using a GPC instrument (EcoSEC, HLC-8320GPC manufactured by Tosoh Corporation) and a GPC column (TSKgel SuperMultiporeHZ-N, TSKgel SuperMultiporeHZ-H manufactured by Tosoh Corporation), with a column temperature of 40°C, tetrahydrofuran as the eluent (elution solvent), a flow rate (flow rate) of 0.35 mL / min, and polystyrene (Shodex manufactured by Showa Denko K.K.) as the standard sample. 【0033】 The viscosity of polyorganosiloxane (a1) and polyorganosiloxane (a2) is not particularly limited, but is usually 10 to 1,000,000 (mPa·s), and preferably 50 to 200,000 (mPa·s) from the viewpoint of reproducibly realizing the effects of the present invention. The viscosity of polyorganosiloxane (a1) and polyorganosiloxane (a2) is the value measured with an E-type rotational viscometer at 25°C. 【0034】 Polyorganosiloxane (a1) and polyorganosiloxane (a2) react with each other via hydrosilylation to form a cured film. Therefore, the curing mechanism is different from that mediated by silanol groups, for example, and consequently, neither siloxane needs to contain silanol groups or functional groups that form silanol groups through hydrolysis, such as alkyloxy groups. 【0035】 In a preferred embodiment of the present invention, the adhesive component (S) comprises a platinum group metal catalyst (A2) together with a polyorganosiloxane component (A1). Such platinum-based metal catalysts are catalysts for promoting the hydrosilylation reaction between the alkenyl group of polyorganosiloxane (a1) and the Si-H group of polyorganosiloxane (a2). 【0036】 Specific examples of platinum-based metal catalysts include, but are not limited to, platinum-based catalysts such as platinum black, platinum-dic chloride, chloroplatinic acid, reaction products of chloroplatinic acid and monohydric alcohols, complexes of chloroplatinic acid and olefins, and platinum bisacetate. Examples of complexes between platinum and olefins include, but are not limited to, complexes between divinyltetramethyldisiloxane and platinum. The amount of platinum group metal catalyst (A2) is not particularly limited, but is usually in the range of 1.0 to 50.0 ppm relative to the total amount of polyorganosiloxane (a1) and polyorganosiloxane (a2). 【0037】 The polyorganosiloxane component (A) may contain a polymerization inhibitor (A3) for the purpose of suppressing the progress of the hydrosilylation reaction. Polymerization inhibitors are not particularly limited as long as they can suppress the progress of the hydrosilylation reaction, and specific examples include alkynyl alcohols such as 1-ethynyl-1-cyclohexanol and 1,1-diphenyl-2-propion-1-ol. The amount of polymerization inhibitor is not particularly limited, but is usually 1000.0 ppm or more relative to the total amount of polyorganosiloxane (a1) and polyorganosiloxane (a2), from the viewpoint of obtaining its effect, and 10000.0 ppm or less from the viewpoint of preventing excessive inhibition of the hydrosilylation reaction. 【0038】 <<Polymer (V)>> The adhesive composition of the present invention contains a polymer (V) represented by the following formula (V) and having a weight-average molecular weight of 60,000 or more, as the aforementioned polyorganosiloxane (a1) constituting the polyorganosiloxane component (A) that hardens by a hydrosilylation reaction. 【0039】 [ka] (n is a positive integer representing the number of repeating units.) 【0040】 The polymer represented by formula (V) may be a commercially available product or a synthesized product. Examples of commercially available polymers represented by formula (V) include products manufactured by Wacker Chemistry. 【0041】 A commercially available polymer represented by formula (V) may be used alone if its weight-average molecular weight is the desired value, or two or more polymers represented by formula (V) with different weight-average molecular weights may be used in combination to achieve the desired weight-average molecular weight. Furthermore, the synthesized polymer represented by formula (V) may be used alone if its weight-average molecular weight is the desired value, or it may be used in combination with two or more polymers represented by formula (V) that have been synthesized separately and have different weight-average molecular weights, so that the weight-average molecular weight is the desired value. Furthermore, commercially available products may be used in combination with those synthesized. 【0042】 The weight-average molecular weight of polymer (V) is preferably 100,000 or more. In other words, by using an adhesive composition containing a polymer (V) represented by formula (V) and having a weight-average molecular weight of 100,000 or more, it is possible to reproducibly form an adhesive layer that exhibits a superior bump deformation suppression effect and a higher etching rate. Furthermore, from the viewpoint of achieving a better balance between a good bump deformation suppression effect and a high etching rate, the weight-average molecular weight of polymer (V) is preferably 160,000 or less, more preferably 150,000 or less, even more preferably 130,000 or less, and still more preferably 110,000 or less. Furthermore, the molecular weight distribution (Mw / Mn) of the polymer (V), determined from the weight-average molecular weight (Mw) and number-average molecular weight (Mn), is preferably 3.2 to 25, more preferably 3.2 to 15, and even more preferably 9 to 13, from the viewpoint of achieving a better balance between a good bump deformation suppression effect and a high etching rate. 【0043】 In this invention, to obtain a polymer (V) having a weight-average molecular weight of 60,000 or more, two or more polymers with different molecular weight ranges that are included in formula (V) are used, and by mixing these polymers as raw materials, it becomes possible to reproducibly prepare a polymer (V) having the desired weight-average molecular weight. As a result, a good bump deformation suppression effect and a high etching rate can be reproducibly achieved. For example, the following methods can be used to obtain polymer (V). (i) By mixing a polymer (V2) represented by the above formula (V) and having a weight-average molecular weight of 15,000 to 20,000 with a polymer (V1) represented by the above formula (V) and having a weight-average molecular weight of 100,000 to 200,000 as raw materials, a polymer (V) represented by the above formula (V) and having a weight-average molecular weight of 60,000 or more can be obtained. The following methods are considered more preferred embodiments of the method for obtaining polymer (V). (ia) In the method of (i) above, the mixing ratio of polymer (V2) and polymer (V1) is set to polymer (V2):polymer (V1) = 0.04 to 1.1:1 by mass ratio. (ib) In the method of (i) above, the mixing ratio of polymer (V2) and polymer (V1) is set to polymer (V2):polymer (V1) = 0.04 to 0.5:1 by mass ratio. (ic) In the method of (i) above, the mixing ratio of polymer (V2) and polymer (V1) is set to polymer (V2):polymer (V1) = 0.3 to 0.5:1 by mass ratio. According to the method described in (ib) above, a polymer (V) having a weight-average molecular weight of 100,000 or more can be reproducibly obtained. Using the polymer (V) obtained by the method described in (ib) above, an adhesive layer exhibiting a superior bump deformation suppression effect can be reproducibly formed compared to when using the polymer (V) obtained by the method described in (ia). Furthermore, the method described in (ic) above allows for the reproducible acquisition of polymer (V) having a weight-average molecular weight of 100,000 to 130,000. Using polymer (V) obtained by the method described in (ic) above, it is possible to reproducibly form an adhesive layer exhibiting a superior bump deformation suppression effect and a higher etching rate compared to using polymer (V) obtained by the method described in (ia). 【0044】 Furthermore, the following methods can be given as more specific methods of the method described in (i) above. (ii) By mixing a polymer (V2-1) represented by the above formula (V) and having a weight-average molecular weight of about 16,000 with a polymer (V1-1) represented by the above formula (V) and having a weight-average molecular weight of about 150,000 as raw materials, a polymer (V) having a weight-average molecular weight of 60,000 or more can be obtained. The following methods are considered more preferred embodiments of the method for obtaining polymer (V). (ii-a) In the method of (ii) above, the mixing ratio of polymer (V2-1) and polymer (V1-1) is set to polymer (V2-1):polymer (V1-1) = 0.04 to 1.1:1 by mass ratio. (ii-b) In the method of (ii) above, the mixing ratio of polymer (V2) and polymer (V1-1) is set to polymer (V2-1):polymer (V1-1) = 0.04 to 0.5:1 by mass ratio. (ii-c) In the method of (ii) above, the mixing ratio of polymer (V2) and polymer (V1-1) is set to polymer (V2-1):polymer (V1-1) = 0.3 to 0.5:1 by mass ratio. According to method (ii-b) above, polymer (V) having a weight-average molecular weight of 100,000 or more can be obtained with greater reproducibility. Using polymer (V) obtained by method (ii-b) above, an adhesive layer exhibiting a superior bump deformation suppression effect can be formed with greater reproducibility than when polymer (V) obtained by method (ii-a) is used. Furthermore, the method described in (ii-c) above allows for the more reproducible acquisition of polymer (V) having a weight-average molecular weight of 100,000 to 130,000. Using polymer (V) obtained by the method described in (ii-c) above, it is possible to form an adhesive layer exhibiting a superior bump deformation suppression effect and a higher etching rate with greater reproducibility than when using polymer (V) obtained by the method described in (ii-a). 【0045】 When using two or more polymers with different molecular weight ranges, as included in formula (V), the method of mixing the polymers is not particularly limited. However, typically, the mixing ratio is determined to achieve the desired weight-average molecular weight, and the polymers are thoroughly mixed using a stirrer. At this time, care should be taken to ensure that the amount of polymer used is not small, as this may prevent sufficient mixing and make it difficult to obtain a highly uniform polymer with good reproducibility. Furthermore, the mixing ratio required to obtain the desired weight-average molecular weight can be appropriately determined by a person skilled in the art without excessive trial and error, by considering the weight-average molecular weight of each polymer used. 【0046】 Furthermore, since it is sufficient that the weight-average molecular weight of the polymer represented by formula (V) contained in the adhesive composition is a desired value, when using two or more polymers represented by formula (V) with different molecular weight ranges, for example, a portion of the two or more polymers may be thoroughly mixed with components other than polymers that constitute the adhesive composition, and then the remaining polymers may be added to the resulting mixture and thoroughly mixed to prepare the adhesive composition. In other words, when preparing the adhesive composition, polymer (V) does not need to be prepared as a separate entity beforehand. During the process of preparing the adhesive composition, two or more polymers represented by formula (V) that do not have the desired weight-average molecular weight may be mixed, and polymer (V) may ultimately be realized in the adhesive composition. Furthermore, in order to adjust the average molecular weight of polymer (V-1), which is polymer (V), polymer (V-1) may be made by mixing one or more polymers represented by formula (V) having different weight-average molecular weights, to form polymer (V-2), which is polymer (V). 【0047】 In the present invention, it is preferable to include a polyorganosiloxane that contains vinyl groups at its terminals, as represented by formula (V), and in which no vinyl groups are bonded anywhere other than the terminals. Furthermore, the objective of the present invention can be achieved by including polymers represented by formula (V), particularly those with a high molecular weight, such as a polymer with a weight-average molecular weight of 60,000 or more. This is presumed to be because the crosslinking of polymers with a high weight-average molecular weight, such as polymer (V), through a hydrosilylation reaction enhances the protective performance of the bumps during external heating and pressurization, and also facilitates the penetration of the detergent composition into the film during cleaning. 【0048】 The polymer represented by formula (V) does not rule out the possibility that the bulk polymer may contain trace amounts of other groups besides the -Si(CH3)2CHCH2 group and -Si(CH3)2-O- group as impurities at the terminals or in the middle of the repeating units. 【0049】 <Removal agent component (B)> The adhesive composition of the present invention may also contain, in addition to the adhesive component (S) described above, a release agent component (B) containing a polyorganosiloxane (hereinafter also referred to as component (B)). In a preferred embodiment, the adhesive composition of the present invention includes, as an adhesive component (S), a polyorganosiloxane component (A) (hereinafter also referred to as component (A)) which is a curing component, and a non-curing component (B) which is a release agent component. Here, "not undergoing a hardening reaction" does not mean that no hardening reaction occurs at all, but rather that the hardening reaction that occurs in the hardening component (A) does not occur. By including component (B) in the adhesive composition, the resulting adhesive layer can be peeled off reproducibly and effectively. Typical examples of such release agent components (B) include polyorganosiloxanes, and specific examples include, but are not limited to, epoxy group-containing polyorganosiloxanes, methyl group-containing polyorganosiloxanes, and phenyl group-containing polyorganosiloxanes. Furthermore, polydimethylsiloxane can be used as the release agent component (B). The polydimethylsiloxane may be modified. Examples of polydimethylsiloxane that may be modified include, but are not limited to, epoxy group-containing polydimethylsiloxane, unmodified polydimethylsiloxane, and phenyl group-containing polydimethylsiloxane. 【0050】 The weight-average molecular weight of the polyorganosiloxane, which is the release agent component (B), is not particularly limited, but is usually 100,000 to 2,000,000, and is preferably 200,000 to 1,200,000, more preferably 300,000 to 900,000, from the viewpoint of reproducibly achieving the effects of the present invention. Furthermore, its dispersion degree (Mw / Mn) is not particularly limited, but is usually 1.0 to 10.0, and is preferably 1.5 to 5.0, more preferably 2.0 to 3.0, from the viewpoint of reproducibly achieving suitable release. The weight-average molecular weight and dispersion degree can be measured by the method described above for polyorganosiloxane. 【0051】 Examples of epoxy group-containing polyorganosiloxanes include R 11 R 12 SiO 2 / 2 Siloxane units (D) are represented by these units. 10 Examples include those containing units. 【0052】 R 11 R is a group that bonds to a silicon atom and represents an alkyl group. 12 This refers to a group that bonds to a silicon atom, representing an epoxy group or an organic group containing an epoxy group. Specific examples of alkyl groups can be found in the examples mentioned above. The epoxy group in the organic group containing an epoxy group may be an independent epoxy group without condensing with other rings, or may be an epoxy group forming a condensed ring with other rings, such as a 1,2-epoxycyclohexyl group. Specific examples of the organic group containing an epoxy group include, but are not limited to, 3-glycidoxypropyl and 2-(3,4-epoxycyclohexyl)ethyl. In the present invention, a preferred example of the epoxy group-containing polyorganosiloxane can be, but is not limited to, epoxy group-containing polydimethylsiloxane. 【0053】 The epoxy group-containing polyorganosiloxane contains the above-mentioned siloxane unit (D 10 unit), but in addition to the D 10 unit, it may also contain a Q unit, an M unit and / or a T unit. In a preferred embodiment of the present invention, specific examples of the epoxy group-containing polyorganosiloxane include a polyorganosiloxane consisting only of D 10 units, a polyorganosiloxane containing D 10 units and Q units, a polyorganosiloxane containing D 10 units and M units, a polyorganosiloxane containing D 10 units and T units, a polyorganosiloxane containing D 10 units, Q units and M units, a polyorganosiloxane containing D 10 units, M units and T units, a polyorganosiloxane containing D 10 units, Q units, M units and T units, etc. 【0054】 The epoxy group-containing polyorganosiloxane is preferably an epoxy group-containing polydimethylsiloxane having an epoxy value of 0.1 to 5. Also, although its weight average molecular weight is not particularly limited, it is usually 1,500 to 500,000, and from the viewpoint of suppressing precipitation in the adhesive, it is preferably 100,000 or less. 【0055】 Specific examples of epoxy group-containing polyorganosiloxanes include, but are not limited to, those represented by formulas (E1) to (E3). 【0056】 [ka] (m1 and n1 are positive integers, representing the number of each repeating unit.) 【0057】 [ka] (m2 and n2 are positive integers indicating the number of repeating units, and R is an alkylene group with 1 to 10 carbon atoms.) 【0058】 [ka] (m3, n3, and o3 represent the number of repeating units and are positive integers; R is an alkylene group with 1 to 10 carbon atoms.) 【0059】 Examples of methyl group-containing polyorganosiloxanes include R 210 R 220 SiO 2 / 2 Siloxane units (D) are represented by these units. 200 Units) containing, preferably R 21 R 21 SiO 2 / 2 Siloxane units (D) are represented by these units. 20 Examples include those containing units. 【0060】 R 210 and R 220 These are groups that bond to a silicon atom, and each independently represents an alkyl group, but at least one of them is a methyl group. The examples mentioned above can be given as specific examples of alkyl groups. R 21 R is a group that bonds to a silicon atom and represents an alkyl group. Specific examples of alkyl groups include those mentioned above. Among them, R 21 A methyl group is preferred as the component. In the present invention, a preferred example of a methyl group-containing polyorganosiloxane is polydimethylsiloxane, but is not limited thereto. 【0061】 Methyl group-containing polyorganosiloxanes are the aforementioned siloxane units (D 200 Unit or D 20 It includes units, but D 200 Units and D 20 In addition to units, Q units, M units, and / or T units may also be included. 【0062】 In one embodiment of the present invention, a specific example of a methyl group-containing polyorganosiloxane is D 200 Polyorganosiloxanes consisting only of units, D 200 Polyorganosiloxane containing units and Q units, D 200 Polyorganosiloxane containing units and M units, D 200 Polyorganosiloxanes containing units and T units, D 200 Polyorganosiloxane containing units, Q units, and M units, D 200 Polyorganosiloxane containing units, M units, and T units, D 200 Examples include polyorganosiloxanes containing units, Q units, M units, and T units. 【0063】 In a preferred embodiment of the present invention, a specific example of a methyl group-containing polyorganosiloxane is D 20 Polyorganosiloxanes consisting only of units, D 20 Polyorganosiloxane containing units and Q units, D 20 Polyorganosiloxane containing units and M units, D 20 Polyorganosiloxanes containing units and T units, D 20 Polyorganosiloxane containing units, Q units, and M units, D 20 Polyorganosiloxane containing units, M units, and T units, D 20 Examples include polyorganosiloxanes containing units, Q units, M units, and T units. 【0064】 Specific examples of methyl group-containing polyorganosiloxanes include, but are not limited to, those represented by formula (M1). 【0065】 [ka] (n4 represents the number of repeating units and is a positive integer.) 【0066】 Examples of phenyl group-containing polyorganosiloxanes include R 31 R 32 SiO 2 / 2 Siloxane units (D) are represented by these units. 30 Examples include those containing units. 【0067】 R 31 R is a group that bonds to a silicon atom and represents a phenyl group or an alkyl group. 32 This is a group that bonds to a silicon atom, representing a phenyl group. Specific examples of alkyl groups include those mentioned above, but a methyl group is preferred. 【0068】 Phenyl group-containing polyorganosiloxanes are the aforementioned siloxane units (D 30 It includes units, but D 30 In addition to units, Q units, M units, and / or T units may also be included. 【0069】 In preferred embodiments of the present invention, a specific example of a phenyl group-containing polyorganosiloxane is D 30 Polyorganosiloxanes consisting only of units, D 30 Polyorganosiloxane containing units and Q units, D 30 Polyorganosiloxane containing units and M units, D 30 Polyorganosiloxanes containing units and T units, D 30 Polyorganosiloxane containing units, Q units, and M units, D 30 Polyorganosiloxane containing units, M units, and T units, D 30 Examples include polyorganosiloxanes containing units, Q units, M units, and T units. 【0070】 Specific examples of phenyl group-containing polyorganosiloxanes include, but are not limited to, those represented by formula (P1) or (P2). 【0071】 [ka] (m5 and n5 are positive integers indicating the number of each repeating unit.) 【0072】 [ka] (m6 and n6 are positive integers that indicate the number of each repeating unit.) 【0073】 The stripping agent component (B), polyorganosiloxane, may be a commercially available product or a synthesized product. Commercially available polyorganosiloxanes include, for example, Wacker Chem's WACKERSILICONE FLUID AK series (AK50, AK 350, AK 1000, AK 10000, AK 1000000) and GENIOPLAST GUM; Shin-Etsu Chemical Co., Ltd.'s dimethyl silicone oil (KF-96L, KF-96A, KF-96, KF-96H, KF-69, KF-965, KF-968) and cyclic dimethyl silicone oil (KF-995); Gelest's epoxy-containing polyorganosiloxanes (product names CMS-227, ECMS-327); Shin-Etsu Chemical Co., Ltd.'s epoxy-containing polyorganosiloxanes (KF-101, KF-1001, KF-1005, X-22-343); and Dow Corning's products. Examples include, but are not limited to, epoxy group-containing polyorganosiloxanes (BY16-839); phenyl group-containing polyorganosiloxanes (PMM-1043, PMM-1025, PDM-0421, PDM-0821) manufactured by Gellest, phenyl group-containing polyorganosiloxanes (KF50-3000CS) manufactured by Shin-Etsu Chemical Co., Ltd., and phenyl group-containing polyorganosiloxanes (TSF431, TSF433) manufactured by Momentive. 【0074】 In a preferred embodiment of the present invention, the adhesive composition comprises an adhesive component (S) and a release agent component (B) containing a polyorganosiloxane that does not undergo a curing reaction. Among these adhesive compositions, an adhesive composition comprising a release agent component (H) containing a polyorganosiloxane with a complex viscosity of 3400 (Pa·s) or more as the release agent component (B) is more preferred. In this invention, the complex viscosity of the polyorganosiloxane, which is the release agent component (H), refers to the value measured using a rheometer at 25°C. Such complex viscosity can be measured, for example, using a rheometer MCR-302 manufactured by Anton Paar Co., Ltd. The adhesive composition of the present invention preferably contains a release agent component (H) as the release agent component (B), but it may also contain one or more release agent components that are included in release agent component (B) in addition to release agent component (H). 【0075】 As mentioned above, the complex viscosity of the polyorganosiloxane, which is the release agent component (H), is 3400 (Pa·s) or higher. However, from the viewpoint of reproducibly realizing the effects of the present invention, it is preferably 4000 (Pa·s) or higher, more preferably 4500 (Pa·s) or higher, even more preferably 5000 (Pa·s) or higher, and still more preferably 5500 (Pa·s) or higher. Furthermore, from the viewpoint of ensuring solubility in organic solvents when organic solvents are used in the preparation of the adhesive composition, it is usually 30000 (Pa·s) or lower, preferably 25000 (Pa·s) or lower, more preferably 20000 (Pa·s) or lower, even more preferably 15000 (Pa·s) or lower, and still more preferably 10000 (Pa·s) or lower. 【0076】 By including the polymer (V) and release agent component (H) described above in the adhesive composition of the present invention, bump deformation can be suppressed and an adhesive layer exhibiting a high etching rate can be formed more reliably. 【0077】 In an example of the adhesive composition of the present invention, the mass ratio of adhesive component (S) to release agent component (B) is usually adhesive component (S):release agent component (B) = 5:95 to 95:5, but preferably 50:50 to 93:7, more preferably 60:40 to 91:9, more preferably 65:35 to 89:11, even more preferably 70:30 to 87:13, and still more preferably 75:25 to 85:15. 【0078】 <Other ingredients> The adhesive composition of the present invention may contain a solvent for purposes such as adjusting viscosity. Specific examples of solvents include, but are not limited to, aliphatic hydrocarbons, aromatic hydrocarbons, and ketones. 【0079】 More specifically, examples of solvents include, but are not limited to, hexane, heptane, octane, nonane, decane, undecane, dodecane, isododecane, menthane, limonene, toluene, xylene, mesitylene, cumene, MIBK (methyl isobutyl ketone), butyl acetate, diisobutyl ketone, 2-octanone, 2-nonanone, and 5-nonanone. Such solvents can be used individually or in combination of two or more. 【0080】 If the adhesive composition of the present invention contains a solvent, its content is appropriately determined considering the viscosity of the desired composition, the application method used, the thickness of the film to be produced, etc., but is in the range of approximately 10 to 90% by mass of the total composition. 【0081】 The viscosity of the adhesive composition of the present invention is not particularly limited, but is typically 500 to 20,000 mPa·s at 25°C, and preferably 1,000 to 6,000 mPa·s. The viscosity of the adhesive composition of the present invention can be adjusted by changing the type of solvent used, their ratios, the concentration of film components, etc., taking into consideration various factors such as the application method used and the desired film thickness. In this invention, "film component" refers to components other than the solvent contained in the composition. 【0082】 <Method for manufacturing adhesive composition> As a preferred embodiment of the method for producing the adhesive composition, for example, the adhesive composition of the present invention can be produced by mixing an adhesive component (S), a release agent component (B), and a solvent, if used. The mixing order is not particularly limited, but examples of methods for easily and reproducibly producing the adhesive composition of the present invention include, for example, dissolving the adhesive component (S) and the release agent component (B) in a solvent, or dissolving a portion of the adhesive component (S) and the release agent component (B) in a solvent, dissolving the remainder in a solvent, and then mixing the resulting solutions. However, the method is not limited to these. When preparing the adhesive composition, heating may be used as appropriate, as long as the components do not decompose or deteriorate. In the present invention, for the purpose of removing foreign matter, the adhesive composition may be filtered using a filter or the like during the manufacturing process or after all components have been mixed. 【0083】 (Laminated structure) The laminate of the present invention comprises a bumped semiconductor substrate, a support substrate, and an adhesive layer. The adhesive layer is interposed between the bumped semiconductor substrate and the support substrate, and is in contact with the semiconductor substrate. The adhesive layer is a layer formed from the adhesive composition of the present invention described above. The laminate is used for temporary bonding in order to process semiconductor substrates, and is suitable for applications where the support substrate and the semiconductor substrate are separated after processing of the semiconductor substrate in the laminate. In the laminate of the present invention, there are no particular restrictions on the number of adhesive layers, and they can be appropriately selected depending on the purpose. For example, in the laminate, there may be one adhesive layer or two or more layers. Furthermore, the laminate of the present invention may include layers other than the adhesive layer between the semiconductor substrate and the support substrate. For example, a laminate may include an adhesive layer and a release layer between the semiconductor substrate and the support substrate. A preferred embodiment of the laminate of the present invention is a laminate having a semiconductor substrate, an adhesive layer, a release layer, and a support substrate in that order. 【0084】 The laminate of the present invention allows for suitable temporary bonding of a bumped semiconductor substrate and a support substrate, suppresses or mitigates bump deformation due to external loads such as heating, and has an adhesive layer that exhibits a high etching rate. Therefore, the laminate of the present invention has an adhesive layer that can satisfy both the effect of suppressing bump deformation and a high etching rate. 【0085】 An example of a laminate is explained below using a diagram. Figure 1A is a schematic cross-sectional view of an example of a laminate. The laminate in Figure 1A comprises a semiconductor substrate 1 having bumps 1a, an adhesive layer 2, and a support substrate 4 in that order. The bumps 1a on the semiconductor substrate 1 are located on the support substrate 4 side. The adhesive layer 2 is interposed between the semiconductor substrate 1 and the support substrate 4. The adhesive layer 2 is in contact with the semiconductor substrate 1. The adhesive layer 2 covers the bump 1a. Figure 1B is a schematic cross-sectional view of another example of a laminate. The laminate in Figure 1B comprises, in this order, a semiconductor substrate 1 having bumps 1a, an adhesive layer 2, a release layer 3, and a support substrate 4. The bumps 1a on the semiconductor substrate 1 are located on the support substrate 4 side. The adhesive layer 2 is interposed between the semiconductor substrate 1 and the support substrate 4. The adhesive layer 2 is in contact with the semiconductor substrate 1. The adhesive layer 2 covers the bump 1a. The release layer 3 is interposed between the adhesive layer 2 and the support substrate 4. The release layer 3 is in contact with both the adhesive layer 2 and the support substrate 4. Each component of the laminate of the present invention will be described in detail below. 【0086】 <Semiconductor substrates> Semiconductor substrates have bumps. Bumps are protruding terminals. In the laminate, the semiconductor substrate has bumps on the support substrate side. In semiconductor substrates, bumps are typically formed on the surface on which circuits are formed. Circuits may be single-layer or multi-layer. The shape of the circuits is not particularly limited. In a semiconductor substrate, the side opposite to the side with bumps (the back surface) is the side that is subjected to processing. 【0087】 The main materials that make up the entire semiconductor substrate are not particularly limited as long as they are used in this type of application, but examples include silicon, silicon carbide, and compound semiconductors. The shape of the semiconductor substrate is not particularly limited, but for example, it is disc-shaped. The disc-shaped semiconductor substrate does not need to have a perfectly circular surface; for example, the outer edge of the semiconductor substrate may have a straight section called an orientation flat, or a notch. The thickness of the disc-shaped semiconductor substrate can be determined appropriately depending on the intended use of the semiconductor substrate and is not particularly limited, but for example, it is 500 to 1,000 μm. The diameter of the disc-shaped semiconductor substrate can be determined appropriately depending on the intended use of the semiconductor substrate and is not particularly limited, but examples include 100 to 1,000 mm. 【0088】 An example of a semiconductor substrate is a silicon wafer with a diameter of approximately 300 mm and a thickness of approximately 770 μm. 【0089】 The material, size, shape, structure, and density of the bumps on the semiconductor substrate are not particularly limited. Examples of bumps include ball bumps, printed bumps, stud bumps, and plated bumps. Typically, the bump height, diameter, and pitch are determined appropriately based on conditions such as a bump height of approximately 1-200 μm, a bump diameter of 1-200 μm, and a bump pitch of 1-500 μm. Examples of materials for the bumps include low-melting-point solder, high-melting-point solder, tin, indium, gold, silver, and copper. The bumps may be composed of a single component or multiple components. More specifically, examples include Sn-based alloy plating such as SnAg bumps, SnBi bumps, Sn bumps, and AuSn bumps. Furthermore, the bump may have a laminated structure that includes a metal layer made of at least one of these components. 【0090】 <Support substrate> The support substrate is not particularly limited as long as it is a material that can support the semiconductor substrate when the semiconductor substrate is being processed, but examples include glass support substrates and silicon support substrates. 【0091】 The shape of the support substrate is not particularly limited, but for example, it can be disc-shaped. The disc-shaped support substrate does not need to have a perfectly circular surface; for example, the outer circumference of the support substrate may have a straight section called an orientation flat, or a notch. The thickness of the disc-shaped support substrate can be appropriately determined according to the size of the semiconductor substrate and is not particularly limited, but for example, it is 500 to 1,000 μm. The diameter of the disc-shaped support substrate can be appropriately determined according to the size of the semiconductor substrate, etc., and is not particularly limited, but for example, it is 100 to 1,000 mm. 【0092】 Examples of support substrates include glass wafers or silicon wafers with a diameter of approximately 300 mm and a thickness of approximately 700 μm. 【0093】 Furthermore, if the laminate includes a release layer and light for release is irradiated from the support substrate side, the support substrate should be made of a light-transmitting material. In this case, the light transmittance is usually 50% or more, preferably 80% or more, and more preferably 90% or more. Specifically, a glass support substrate can be given as an example, but is not limited to this. 【0094】 <Adhesive layer> The adhesive layer is interposed between the support substrate and the semiconductor substrate. The adhesive layer is in contact with the semiconductor substrate. 【0095】 The adhesive layer is formed using the adhesive composition of the present invention described above, and more specifically, by curing the adhesive composition. The thickness of the adhesive layer is not particularly limited, but from the viewpoint of obtaining a good bump deformation suppression effect, it is preferably 20 to 120 μm, and more preferably 40 to 100 μm. The method for forming an adhesive layer from an adhesive composition will be described in detail in the section below on <Method for Manufacturing Laminates>. 【0096】 <Exfoliation layer> The laminate of the present invention may include a release layer. If the laminate has a release layer, for example, the release layer can be arranged so as to be in contact with the support substrate and the adhesive layer. 【0097】 As long as the release layer contributes to improved release properties through heating or light irradiation and can separate the semiconductor substrate and support substrate in the laminate, there are no particular restrictions on the type of release layer or the release method. For example, the release layers described below can be used. 【0098】 The release layer is a film obtained from a release agent composition containing an organic resin and a solvent, and in one embodiment, the film is a cured film obtained by the curing of the film components in the release agent composition. The stripping agent composition may further contain a crosslinking agent, an acid catalyst, and a surfactant. 【0099】 The release agent composition contains an organic resin. The organic resin is preferably one that exhibits suitable release properties, and when the semiconductor substrate and support substrate are separated by light irradiation of the release layer, the organic resin preferably absorbs light and undergoes the necessary alteration, such as decomposition, to improve the release properties. 【0100】 A preferred example of an organic resin is novolac resin. When peeling is performed by irradiating the release layer of the laminate of the present invention with light, a novolac resin that absorbs and changes in wavelength 190 nm to 600 nm is preferred, and a novolac resin that changes in wavelength 308 nm, 343 nm, 355 nm, or 365 nm by irradiation with light such as a laser is more preferred. 【0101】 To give a specific example, novolac resin is a polymer that contains one or more units selected from the group consisting of the units represented by the following formula (C1-1), the units represented by the following formula (C1-2), and the units represented by the following formula (C1-3). 【0102】 [ka] 【0103】 C1 represents a group derived from an aromatic compound containing a nitrogen atom; C2 represents a group containing a tertiary carbon atom having at least one selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in its side chain; C3 represents a group derived from an aliphatic polycyclic compound; and C4 represents a group derived from phenol, bisphenol, naphthol, biphenyl, or biphenol. With regard to the novolac resin to be contained in the release agent composition and the release layer using the novolac resin, reference may be given to the novolac resin and the release layer using the novolac resin described in International Publication No. 2019 / 088103. 【0104】 The release layer is formed by applying a release agent composition, drying it, and allowing it to harden. The thickness of the release layer in the laminate according to the present invention is set appropriately considering the type of release agent component and the desired degree of releaseability, but is usually 5 to 10,000 nm. From the viewpoint of suppressing deterioration of release ability due to thin films and obtaining a release layer with excellent releaseability in a reproducible manner, it is preferably 10 nm or more, more preferably 50 nm or more, and even more preferably 100 nm or more. From the viewpoint of avoiding non-uniformity due to thick films, it is preferably 5,000 nm or less, more preferably 1,000 nm or less, and even more preferably 500 nm or less. 【0105】 <Method for manufacturing laminates> If the adhesive layer in the laminate consists only of a single layer formed using the adhesive composition of the present invention, the method for manufacturing the laminate of the present invention includes a step of forming the adhesive layer (adhesive coating layer formation step and adhesive layer formation step), and further includes other steps such as a bonding step as necessary. The method for manufacturing the laminate in this case will be described in detail in the section "<<First Embodiment>>" below. Furthermore, if the laminate includes an adhesive layer and a release layer, the method for manufacturing the laminate of the present invention includes a step of forming an adhesive layer (adhesive coating layer formation step and adhesive layer formation step), as well as a step of forming a release layer, and further includes other steps such as a bonding step as necessary. The method for manufacturing the laminate in this case will be described in detail in the section "<<Second Embodiment>>" below. 【0106】 <<First Embodiment>> The adhesive layer is formed by going through an adhesive coating layer formation process and an adhesive layer formation process. 【0107】 <<<Adhesive coating layer formation process>>> In the adhesive coating layer formation process, for example, an adhesive composition is applied to a bumped semiconductor substrate to form an adhesive coating layer. The coating method is not particularly limited, but it is usually the spin coating method. Alternatively, a method can be adopted in which a coating film is formed separately by the spin coating method or the like, and the sheet-like coating film is attached as an adhesive coating layer. The thickness of the adhesive coating layer is determined appropriately, taking into consideration the thickness of the adhesive layer within the laminate, etc. The adhesive composition may be heated (preheat treatment) for the purpose of drying the coating film of the applied adhesive composition, for reasons such as the adhesive composition containing a solvent. The heating temperature of the applied adhesive composition cannot be specified in general terms, as it varies depending on the type and amount of adhesive components contained in the adhesive composition, whether or not a solvent is included, the boiling point of the solvent used, the desired thickness of the adhesive layer, etc. However, it is usually 80 to 150°C, and the heating time is usually 30 seconds to 5 minutes. Heating can be done using a hot plate, oven, etc. 【0108】 <<<Adhesive layer formation process>>> The adhesive layer formation process involves heating the adhesive coating layer to cure the adhesive composition and form an adhesive layer. The adhesive layer formation process is not particularly limited, as long as it involves heating the adhesive layer while the support substrate and the adhesive coating layer are in contact, and the adhesive coating layer and the semiconductor substrate are in contact, thereby forming the adhesive layer. For example, by using a semiconductor substrate with an adhesive coating layer formed on it and a support substrate, the two substrates (semiconductor substrate and support substrate) can be arranged so that the adhesive coating layer is sandwiched between them, so that the support substrate and the adhesive coating layer are in contact, and the adhesive coating layer and the semiconductor substrate are in contact, and then a heat treatment can be applied (post-heat treatment). The heating temperature and time are not particularly limited, as long as they are the temperature and time required for the adhesive coating layer to be converted into an adhesive layer. The heating temperature is preferably 120°C or higher, more preferably 150°C or higher, from the viewpoint of achieving a sufficient curing rate, and preferably 250°C or lower, from the viewpoint of preventing deterioration of each layer constituting the laminate (including the support substrate and semiconductor substrate). Even more preferably, it is 180 to 200°C. The heating time is preferably 1 minute or more, more preferably 5 minutes or more, from the viewpoint of achieving suitable bonding of each layer constituting the laminate (including the support substrate and the semiconductor substrate), and preferably 180 minutes or less, more preferably 120 minutes or less, from the viewpoint of suppressing or avoiding adverse effects on each layer due to excessive heating. Even more preferably, from the viewpoint of substrate processing efficiency, it is 1 to 20 minutes. Heating can be done using a hot plate, oven, etc. 【0109】 (Lamination process) Between the adhesive coating layer formation step and the adhesive layer formation step, it is preferable to perform a bonding step to ensure sufficient bonding between the semiconductor substrate and the support substrate. The bonding process is not particularly limited as long as it allows bonding of the substrate and the layer without damaging the substrate or layer, but typically it is a process in which a load can be applied in the thickness direction of the support substrate and the semiconductor substrate, and more preferably a process in which a load can be applied in the thickness direction of the support substrate and the semiconductor substrate under reduced pressure. The load is not particularly limited as long as it allows the substrate and layer to bond together and does not damage the substrate or layer, but for example, it is between 10 and 1,000 N. The degree of reduced pressure is not particularly limited as long as it allows for bonding of the substrate and the layer without damaging the substrate or the layer, but for example, it is 10 to 10,000 Pa. 【0110】 <<Second Embodiment>> As a preferred embodiment of the method for manufacturing a laminate including a release layer, the method for manufacturing a laminate will be described below using as an example a case in which the release layer is made of a release agent composition containing an organic resin such as the novolac resin mentioned above. 【0111】 An adhesive coating layer is formed on the semiconductor substrate in the same manner as described in the section on the adhesive coating layer formation process of the first embodiment described above. 【0112】 A release agent composition is applied to the support substrate to form a release agent coating layer, which is then heated and cured to form a release layer. Here, the method for applying the release agent composition can be the same as the application method described in the section on the adhesive coating layer formation step of the first embodiment described above. 【0113】 By using a semiconductor substrate with an adhesive coating layer formed on it and a support substrate with a release layer formed on it, the two substrates (semiconductor substrate and support substrate) are arranged so that the two layers (adhesive coating layer and release layer) are sandwiched together, so that the adhesive coating layer and the release layer are in contact, and then a heat treatment is applied. The heating temperature and time are not particularly limited, as long as they are the temperature and time required for the adhesive coating layer to be converted into an adhesive layer. As for the heating conditions, the same conditions as those described in the adhesive layer formation step of the first embodiment above can be used. 【0114】 (Lamination process) Between the adhesive coating layer formation step and the adhesive layer formation step, it is preferable to perform a bonding step to ensure sufficient bonding between the semiconductor substrate and the support substrate. For the bonding process, the same conditions as those described in the first embodiment above can be used. 【0115】 (Method of manufacturing semiconductor substrates) The laminate of the present invention is used for temporary bonding in order to process semiconductor substrates, and is suitable for applications where the support substrate and the semiconductor substrate are separated after processing of the semiconductor substrate in the laminate. The present invention provides a method for manufacturing a semiconductor substrate, which includes at least a processing step in which the semiconductor substrate is processed, and a peeling step in which the support substrate and the processed semiconductor substrate are separated, and further includes other steps such as a removal step as necessary. 【0116】 <Processing process> The processing steps are not particularly limited as long as they involve processing the semiconductor substrate in the laminate according to the present invention, but include, for example, polishing and through-electrode formation. For example, various processing steps may involve processing under high temperature and high pressure, but the laminate of the present invention can effectively prevent bump deformation of the semiconductor substrate even when processed under high temperature (e.g., 250-350°C) and high pressure. 【0117】 <<Polishing process>> Polishing processes are not particularly limited, but any process that involves polishing the surface of a semiconductor substrate opposite to the surface where bumps are present in order to thin the semiconductor substrate can be used. Examples include physical polishing using abrasives or grinding wheels. The polishing process can be carried out using general polishing equipment used for polishing semiconductor substrates. The polishing process reduces the thickness of the semiconductor substrate, resulting in a semiconductor substrate thinned to a desired thickness. The thickness of the thinned semiconductor substrate is not particularly limited, but for example, it may be 30 to 300 μm or 30 to 100 μm. 【0118】 <<Through electrode formation process>> Polished semiconductor substrates may have through-electrodes formed on them to enable conductivity between thinned semiconductor substrates when multiple thinned semiconductor substrates are stacked. Therefore, the method for manufacturing a semiconductor substrate may include a through-electrode formation process in which through-electrodes are formed on the polished semiconductor substrate after the polishing process but before the stripping process. The method for forming through-electrodes in a semiconductor substrate is not particularly limited, but examples include forming through-holes and filling the formed through-holes with a conductive material. The formation of through-holes can be performed, for example, by photolithography. The filling of through-holes with conductive material is carried out, for example, by plating technology. 【0119】 <Peeling process> The peeling process is not particularly limited as long as it is a process in which the support substrate and the processed semiconductor substrate are separated after the processing process. Examples of delamination methods include, but are not limited to, solvent delamination, delamination by light irradiation (laser light, non-laser light), mechanical delamination using equipment with sharp parts (so-called debonders), and manual delamination by pulling the support apart from the wafer. Typically, delamination is performed after the laminate of the present invention has been manufactured and subjected to predetermined processing. In particular, when the laminate includes a release layer, and the release layer is formed using an organic resin that absorbs light and undergoes the necessary alteration to improve release ability as described above, the release layer can be peeled off, for example, by irradiating it with a laser from the support side. The laser beam used is ultraviolet light with wavelengths of 190 nm to 400 nm, or 190 nm to 600 nm (for example, 308 nm, 355 nm, 532 nm). Peeling is performed using a pulsed laser with a processing energy density of 50-500 mJ / cm². 2 It can be done by setting it to a certain degree. When a laminate includes a delamination layer, delamination typically occurs within the delamination layer or at the interface between the delamination layer and an adjacent substrate or layer (e.g., an adhesive layer). Delamination occurring within the delamination layer means that the delamination layer ruptures. 【0120】 <Other processes> <<Removal process>> The removal process is not particularly limited as long as it involves removing the adhesive layer after the peeling process, but one example is a method of dissolving and removing the adhesive layer using a cleaning agent composition. Alternatively, removal using removal tape or the like may be combined with the dissolution removal. When using a cleaning agent composition, for example, a semiconductor substrate with an adhesive layer can be immersed in the cleaning agent composition or sprayed onto it. As shown in the following examples, the adhesive formed by the adhesive composition of the present invention exhibits a high etching rate, and therefore, the laminate of the present invention can easily dissolve and remove the adhesive layer remaining on the semiconductor substrate after the peeling process. 【0121】 A suitable example of a detergent composition used in the present invention is a detergent composition comprising a quaternary ammonium salt and a solvent. Quaternary ammonium salts are composed of a quaternary ammonium cation and an anion, and are not particularly limited as long as they are used for this type of application. Typical examples of such quaternary ammonium cations include tetra(hydrocarbon)ammonium cations. On the other hand, the anion that pairs with it is the hydroxide ion (OH - ); fluoride ion (F - ), chloride ions (Cl - ), bromine ions (Br - ), iodide ion (I - ) and other halogen ions; tetrafluoroborate ions (BF4 - ); Hexafluorophosphate ion (PF6 - Examples include, but are not limited to, these. 【0122】 In the present invention, the quaternary ammonium salt is preferably a halogen-containing quaternary ammonium salt, and more preferably a fluorine-containing quaternary ammonium salt. In quaternary ammonium salts, halogen atoms may be contained in the cation or the anion, but are preferably contained in the anion. 【0123】 In one preferred embodiment, the fluorine-containing quaternary ammonium salt is tetra(hydrocarbon)ammonium fluoride. Specific examples of hydrocarbon groups in tetraammonium fluoride include alkyl groups having 1 to 20 carbon atoms, alkenyl groups having 2 to 20 carbon atoms, alkynyl groups having 2 to 20 carbon atoms, and aryl groups having 6 to 20 carbon atoms. In a more preferred embodiment, tetra(hydrocarbon)ammonium fluoride comprises tetraalkylammonium fluoride. Specific examples of tetraalkylammonium fluoride include, but are not limited to, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, and tetrabutylammonium fluoride (also known as tetrabutylammonium fluoride). Among these, tetrabutylammonium fluoride is preferred. 【0124】 An example of a method in which the manufacturing of a laminate and the manufacturing of a thinned wafer are carried out in a series will be explained using Figures 2A to 2F. Figures 2A to 2F illustrate one embodiment of the manufacturing process for laminates and thinned wafers. First, prepare a wafer 1 having bumps 1a (Figure 2A). Next, an adhesive composition is applied to the surface of wafer 1 where the bumps 1a are present by spin coating using a coating apparatus 12 to form an adhesive coating layer 2a (Figure 2B). Next, a release agent composition is applied to the support substrate 4 by spin coating using a coating device (not shown), and the release agent composition is heated to cure it and form a release layer 3, thus preparing the support substrate 4 with the release layer 3 formed on it (Figure 2C). Next, the wafer 1 on which the adhesive coating layer 2a is formed and the support substrate 4 on which the release layer 3 is formed are bonded together under reduced pressure, with the adhesive coating layer 2a and the release layer 3 sandwiched between them. Then, a heating device (hot plate) 13 is placed on the side of the wafer 1 opposite to the side where the bumps 1a are located, and the adhesive coating layer 2a is heated by the heating device 13 to harden the adhesive composition and convert it into adhesive layer 2 (Figure 2D). The laminate is obtained by the process shown in Figures 2A to 2D. Next, we will explain an example of the manufacturing process for thinned wafers. Next, the side of wafer 1 opposite to the side where the bump 1a is located is polished using a polishing device (not shown) to thin the wafer 1 (Figure 2E). The thinned wafer 1 may also be subjected to processes such as the formation of through-electrodes. Next, light (ultraviolet light) is irradiated from the support substrate 4 side (not shown) to separate the thinned wafer 1 from the support substrate 4 (Figure 2F). At this time, the adhesive layer 2 and the release layer 3 separate, causing the thinned wafer 1 and the support substrate 4 to separate. Next, the thinned wafer 1 is cleaned by dissolving and removing the adhesive layer 2 from the wafer 1 using a cleaning device (not shown) with a cleaning agent composition. The thinned wafer 1 is obtained as a result of the above steps. [Examples] 【0125】 The present invention will be described in more detail below with reference to examples, but the present invention is not limited to the following examples. The apparatus used is as follows. 【0126】 [Device] (1) Mixer A: ARE-500, manufactured by Thinky Co., Ltd. (2) Viscometer: Rotational viscometer TVE-22H manufactured by Toki Sangyo Co., Ltd. (3) Complex viscometer: Rheometer MCR-302 manufactured by Anton Paar Co., Ltd. (4) Agitator H: AS ONE heated rocking mixer HRM-1 (5) Contact-type film thickness gauge: WT-425 wafer thickness measuring device manufactured by Tokyo Seimitsu Co., Ltd. (6) Optical film thickness gauge (film thickness measurement): F-50 manufactured by Filmetrix Co., Ltd. (7) Vacuum bonding equipment: Autobonder manufactured by Züss Microtech Co., Ltd. (8) High-rigidity grinding machine: HRG300 manufactured by Tokyo Seimitsu Co., Ltd. (9) Dicing machine: SS30, manufactured by Tokyo Seimitsu Co., Ltd. (10) Heating and pressing device: Manufactured by Ayumi Industries Co., Ltd., adhesive device 【0127】 [Measurement of molecular weight] The weight-average molecular weight, number-average molecular weight, and dispersion of polyorganosiloxanes were measured using a GPC instrument (EcoSEC HLC-8320GPC, Tosoh Corporation) and GPC columns (TSKgel SuperMultiporeHZ-N, TSKgel SuperMultiporeHZ-H, Tosoh Corporation), with a column temperature of 40°C, tetrahydrofuran as the eluent, and a flow rate of 0.35 mL / min. Polystyrene (Shodex, Showa Denko K.K.) was used as the standard sample. 【0128】 The structural formulas of each component used in the examples are shown below. 【0129】 [ka] 【0130】 [1] Preparation of adhesive composition [Preparation Example 1-1] In a 300 mL stirring container specifically for the rotation-orbit mixer, 62.05 g of a p-menthane solution (concentration 80.6% by mass) of vinyl group-containing MQ resin (manufactured by Wacker Chem Co., Ltd.) as component (a1) and 0.25 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) as component (A3) were added, and the mixture was stirred for 5 minutes using stirrer A to obtain mixture (I). To the resulting mixture (I), the aforementioned component (B) is a polyorganosiloxane represented by the above formula (M1) (complex viscosity 6000 Pa·s, weight-average molecular weight 642,000 (dispersion degree 2.6), manufactured by Wacker Chem Ltd.). 10.09 g of product name GENIOPLASTGUM, 30.17 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Ltd.) with a viscosity of 100,000 mPa·s represented by the above formula (V) as component (a1) (hereinafter also referred to as vinyl group-containing linear polydimethylsiloxane v1), 8.33 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Ltd.) with a viscosity of 100 mPa·s as component (a2), and 24.56 g of p-menthane (manufactured by Nippon Terpene Chemical Co., Ltd.) as a solvent were added, and then 0.26 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chem Ltd.) as component (A3) was added, and the mixture was stirred with stirrer A for 10 minutes to obtain mixture (II). As component (A2), 0.10 g of platinum catalyst (manufactured by Wacker Chem Co., Ltd.) and as component (a1), 28.96 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Co., Ltd.) with a viscosity of 200 mPa·s represented by the above formula (V) (hereinafter also referred to as vinyl group-containing linear polydimethylsiloxane v2) were stirred in stirrer A for 5 minutes to obtain mixture (III). 11.76 g of the obtained mixture (III) was added to mixture (II), and the mixture was stirred with stirrer A for 5 minutes to obtain mixture (IV). Finally, the obtained mixture (IV) was filtered through a 300-mesh nylon filter to obtain the adhesive composition. The viscosity of the adhesive composition, as measured using a rotational viscometer, was 3600 mPa·s. The weight-average molecular weight of the polymer represented by formula (V) contained in the adhesive composition was 109,381, and the Mw / Mn ratio was 11.5. 【0131】 [Preparation Examples 1-2] In a 150 mL stirring container specifically for the rotational and revolving mixer, 35.30 g of a p-menthane solution (concentration 85.1% by mass) of vinyl group-containing MQ resin (manufactured by Wacker Chem Co., Ltd.) as component (a1) and 0.15 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) as component (A3) were added, and the mixture was stirred for 5 minutes using stirrer A to obtain mixture (I). To the resulting mixture (I), the aforementioned component (B) is a polyorganosiloxane represented by the above formula (M1) (complex viscosity 6000 Pa·s, weight-average molecular weight 642,000 (dispersion degree 2.6), manufactured by Wacker Chem Ltd.). 10.01 g of p-menthane solution (concentration 60.3% by mass) of product name GENIOPLASTGUM, 24.08 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Ltd.) with a viscosity of 100,000 mPa·s represented by the above formula (V) as component (a1), 5.00 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Ltd.) with a viscosity of 100 mPa·s as component (a2), and 13.02 g of p-menthane (manufactured by Nippon Terpene Chemical Co., Ltd.) as a solvent were added, and then 0.15 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chem Ltd.) as component (A3) was added, and the mixture was stirred with stirrer A for 10 minutes to obtain mixture (II). As component (A2), 0.03 g of platinum catalyst (manufactured by Wacker Chem Co., Ltd.) and as component (a1), 1.53 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Co., Ltd.) with a viscosity of 200 mPa·s represented by the above formula (V) were stirred in stirrer A for 5 minutes to obtain mixture (III). 1.04 g of the obtained mixture (III) was added to mixture (II), and the mixture was stirred with stirrer A for 5 minutes to obtain mixture (IV). Finally, the obtained mixture (IV) was filtered through a 300-mesh nylon filter to obtain the adhesive composition. The viscosity of the adhesive composition, as measured using a rotational viscometer, was 5200 mPa·s. The weight-average molecular weight of the polymer represented by formula (V) contained in the adhesive composition was 130,814, and the Mw / Mn ratio was 3.27. 【0132】 [Preparation Examples 1-3] In a 150 mL stirring container specifically for the rotation-orbit mixer, 35.31 g of a p-menthane solution (concentration 85.1% by mass) of vinyl group-containing MQ resin (manufactured by Wacker Chem Co., Ltd.) as component (a1) and 0.15 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) as component (A3) were added, and the mixture was stirred for 5 minutes using stirrer A to obtain mixture (I). To the resulting mixture (I), the aforementioned component (B) is a polyorganosiloxane represented by the above formula (M1) (complex viscosity 6000 Pa·s, weight-average molecular weight 642,000 (dispersion degree 2.6), manufactured by Wacker Chem Ltd.). 10.02 g of a p-menthane solution (concentration 60.3% by mass) of product name GENIOPLASTGUM, 12.02 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Ltd.) with a viscosity of 100,000 mPa·s represented by the above formula (V) as component (a1), 5.00 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Ltd.) with a viscosity of 100 mPa·s as component (a2), and 13.00 g of p-menthane (manufactured by Nippon Terpene Chemical Co., Ltd.) as a solvent were added. Further, 0.15 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chem Ltd.) as component (A3) was added, and the mixture was stirred with stirrer A for 10 minutes to obtain mixture (II). As mentioned above, 0.03 g of platinum catalyst (manufactured by Wacker Chem Co., Ltd.) as component (A2) and 19.54 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Co., Ltd.) with a viscosity of 200 mPa·s represented by formula (V) as mentioned above as component (a1) were stirred in stirrer A for 5 minutes to obtain mixture (III). 13.04 g of the obtained mixture (III) was added to mixture (II), and the mixture was stirred with stirrer A for 5 minutes to obtain mixture (IV). Finally, the obtained mixture (IV) was filtered through a 300-mesh nylon filter to obtain the adhesive composition. The viscosity of the adhesive composition, as measured using a rotational viscometer, was 1800 mPa·s. The weight-average molecular weight of the polymer represented by formula (V) contained in the adhesive composition was 67,931, and the Mw / Mn ratio was 22.42. 【0133】 [Comparative Preparation Example 1-1] In a 600 mL stirring container specifically for the rotation-orbit mixer, 150 g of a mixture (85.5 / 64.5 (w / w)) of a vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Ltd.) with a viscosity of 200 mPa·s represented by the above formula (V) as component (a1) and MQ resin (manufactured by Wacker Chem Ltd.) having a polysiloxane skeleton and vinyl groups was added. 15.81 g of a SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Ltd.) with a viscosity of 100 mPa·s was added as component (a2), and 0.17 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chem Ltd.) was added as component (A3). The mixture was stirred with stirrer A for 5 minutes to obtain mixture (I). In a 50 mL screw-cap tube, 0.33 g of platinum catalyst (manufactured by Wacker Chem Co., Ltd.) as component (A2) and 9.98 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Co., Ltd.) with a viscosity of 1000 mPa·s represented by the above formula (W) (hereinafter also referred to as vinyl group-containing linear polydimethylsiloxane v3) as component (a1) were placed, and the mixture was stirred with stirrer A for 5 minutes to obtain mixture (II). 0.52 g of the obtained mixture (II) was added to mixture (I), and the mixture was stirred with stirrer A for 5 minutes to obtain mixture (III). Finally, the resulting mixture (III) was filtered through a 300-mesh nylon filter to obtain the adhesive composition. The viscosity of the adhesive composition, as measured using a rotational viscometer, was 9900 mPa·s. 【0134】 [Comparative Preparation Examples 1-2] In a 600 mL stirring container specifically for the rotation-orbit mixer, 104.14 g of a p-menthane solution (concentration 80.6% by mass) of MQ resin (manufactured by Wacker Chem Co., Ltd.) having a polysiloxane skeleton and vinyl groups was added as component (a1), 58.11 g of polyorganosiloxane represented by the above formula (M1) (manufactured by Wacker Chem Co., Ltd., complex viscosity 800 Pa·s) was added as component (B), and 34.94 g of p-menthane (manufactured by Nippon Terpene Chemical Co., Ltd.) and 6.20 g of n-decane (manufactured by Sankyo Chemical Co., Ltd.) were added as solvents. The mixture was stirred with stirrer A for 5 minutes to obtain mixture (I). To the obtained mixture (I), 16.79 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Ltd.) with a viscosity of 100 mPa·s as component (a2) and 24.54 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Ltd.) with a viscosity of 200 mPa·s represented by the above formula (V) as component (a1) were added, and the mixture was stirred with stirrer A for 5 minutes to obtain mixture (II). As the aforementioned components (A3), 1.61 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) and 1.61 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chem Co., Ltd.), along with 3.23 g of p-menthane (manufactured by Nippon Terpene Chemical Co., Ltd.) as a solvent, were stirred with stirrer A for 60 minutes to obtain mixture (III). 1.29 g of the obtained mixture (III) was added to mixture (II), and the mixture was stirred with stirrer A for 5 minutes to obtain mixture (IV). As component (A2), 0.65 g of platinum catalyst (manufactured by Wacker Chem Co., Ltd.) and as component (a1), 19.37 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Co., Ltd.) with a viscosity of 1000 mPa·s represented by the above formula (W) were stirred in stirrer A for 5 minutes to obtain mixture (V). 4.00 g of the obtained mixture (V) was added to mixture (IV), and the mixture was stirred with stirrer A for 5 minutes to obtain mixture (VI). Finally, the obtained mixture (VI) was filtered through a 300-mesh nylon filter to obtain the adhesive composition. The viscosity of the adhesive composition, as measured using a rotational viscometer, was 3000 mPa·s. 【0135】 [Comparative Preparation Examples 1-3] In a 200 mL stirring container specifically for the rotation-orbit mixer, 35.32 g of a p-menthane solution (concentration 85.1% by mass) of vinyl group-containing MQ resin (manufactured by Wacker Chem Co., Ltd.) as component (a1) and 0.15 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) as component (A3) were added, and the mixture was stirred for 5 minutes using stirrer A to obtain mixture (I). To the obtained mixture (I), 10.03 g of a p-menthane solution (concentration 60.3% by mass) of a polyorganosiloxane represented by the above formula (M1) (complex viscosity 6000 Pa·s, weight average molecular weight 642,000 (dispersion 2.6), trade name GENIOPLASTGUM manufactured by Wacker Chemie AG) as the aforementioned component (B), 24.06 g of a vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie AG) having a viscosity of 200 mPa·s represented by the above formula (V) as the aforementioned component (a1), 4.98 g of a SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie AG) having a viscosity of 100 mPa·s as the aforementioned component (a2), and 13.00 g of p-menthane (manufactured by Nippon Terpene Chemical Co., Ltd.) as a solvent were added. Further, 0.16 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chemie AG) as the aforementioned component (A3) was stirred with a stirrer A for 10 minutes to obtain a mixture (II). 0.027 g of a platinum catalyst (manufactured by Wacker Chemie AG) as the aforementioned component (A2) and 1.54 g of a vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie AG) having a viscosity of 200 mPa·s represented by the above formula (V) as the aforementioned component (a1) were stirred with a stirrer A for 5 minutes to obtain a mixture (III). 1.04 g of the obtained mixture (III) was added to the mixture (II) and stirred with a stirrer A for 5 minutes to obtain a mixture (IV). Finally, the obtained mixture (IV) was filtered through a nylon filter of 300 mesh to obtain an adhesive composition. The viscosity of the adhesive composition measured using a rotational viscometer was 610 mPa·s. 【0136】 [Comparative Preparation Example 1-4] In a 200 mL stirring container dedicated for a planetary mixer, 35.27 g of a p-menthane solution (concentration 85.1% by mass) of a vinyl group-containing MQ resin (manufactured by Wacker Chemie AG) as the aforementioned component (a1) and 0.15 g of 1,1-diphenyl-2-propyn-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) as the aforementioned component (A3) were added, and stirred with a stirrer A for 5 minutes to obtain a mixture (I). To the obtained mixture (I), 10.01 g of a p-menthane solution (concentration 60.3% by mass) of a polyorganosiloxane represented by the above formula (M1) (complex viscosity 6000 Pa·s, weight average molecular weight 642,000 (dispersion 2.6), trade name GENIOPLASTGUM manufactured by Wacker Chemie AG) as the above-mentioned component (B), 18.00 g of a vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie AG) having a viscosity of 1000 mPa·s represented by the above formula (W) as the above-mentioned component (a1), 4.98 g of a SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie AG) having a viscosity of 100 mPa·s as the above-mentioned component (a2), and 13.00 g of p-menthane (manufactured by Nippon Terpene Chemical Co., Ltd.) as a solvent were added. Further, 0.16 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chemie AG) as the above-mentioned component (A3) was added thereto, and the mixture was stirred with stirrer A for 10 minutes to obtain mixture (II). 0.028 g of a platinum catalyst (manufactured by Wacker Chemie AG) as the above-mentioned component (A2) and 10.54 g of a vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie AG) having a viscosity of 200 mPa·s represented by the above formula (V) as the above-mentioned component (a1) were stirred with stirrer A for 5 minutes to obtain mixture (III). 7.06 g of the obtained mixture (III) was added to mixture (II), and the mixture was stirred with stirrer A for 5 minutes to obtain mixture (IV). Finally, the obtained mixture (IV) was filtered through a nylon filter of 300 mesh to obtain an adhesive composition. The viscosity of the adhesive composition measured using a rotational viscometer was 820 mPa·s. 【0137】 The measurement results of the molecular weights of vinyl group-containing linear polydimethylsiloxanes v1, v2, and v3 used in Preparation Examples 1-1 to 1-3 and Comparative Preparation Examples 1-1 to 1-4 are shown in Table 1 below. 【0138】 【Table 1】 【0139】 [2] Preparation of Release Agent Composition [Preparation Example 2] 56.02 g of N-phenyl-1-naphthylamine, 50.00 g of 1-pyrenecarboxyaldehyde, 6.67 g of 4-(trifluoromethyl)benzaldehyde, and 2.46 g of methanesulfonic acid were placed in a flask, to which 86.36 g of 1,4-dioxane and 86.36 g of toluene were added, and the mixture was stirred under reflux under a nitrogen atmosphere for 18 hours. After the reaction mixture cooled, 96 g of tetrahydrofuran was added to dilute it, and the resulting dilution was added dropwise to methanol to obtain a precipitate. The precipitate was collected by filtration, the filtrate was washed with methanol, and the mixture was dried under reduced pressure at 60°C to obtain 72.12 g of novolac resin. The weight-average molecular weight of the polymer novolac resin, measured in polystyrene equivalents by GPC, was 1,100. 3.6 g of the obtained novolac resin, 0.72 g of a compound represented by the following formula (L) as a crosslinking agent (manufactured by Honshu Chemical Industry Co., Ltd., trade name TMOM-BP), and 0.1 g of pyridinium p-toluenesulfonate were dissolved in 95.58 g of propylene glycol monomethyl ether acetate. The resulting solution was filtered using a polyethylene microfilter with a pore size of 0.2 μm to obtain a release agent composition. 【0140】 [ka] 【0141】 [3] Preparation of detergent composition [Preparation Example 3] 5 g of tetrabutylammonium fluoride trihydrate (manufactured by Kanto Chemical Co., Ltd.) was mixed with 95 g of N,N-dimethylpropionamide and stirred to obtain a detergent composition. 【0142】 [4] Evaluation of the removeability of the adhesive layer Etching rates were measured to evaluate the cleanability of the adhesive layer obtained from the adhesive composition. The adhesive compositions obtained in Preparation Examples 1-1 to 1-3 and Comparative Preparation Examples 1-1 to 1-4 were applied to a 12-inch silicon wafer using a spin coater and heated at 200°C for 10 minutes to form an adhesive layer (100 μm thick). The wafer with the formed film (adhesive layer) was then cut into 4 cm square chips, and the film thickness was measured using a contact film thickness gauge. The chips were then placed in a 9 cm diameter stainless steel petri dish, 7 mL of the cleaning agent composition obtained in Preparation Example 3 was added, the dish was covered, and then placed on a stirrer H and stirred and washed at 23°C for 5 minutes. After cleaning, the tips were removed, washed with isopropanol and pure water, dried at 120°C for 1 minute, and the film thickness was measured again using a contact film thickness gauge. The decrease in film thickness before and after cleaning was calculated, and the etching rate [μm / min] was calculated by dividing the decrease by the cleaning time, which was used as an indicator of cleaning power. The results are shown in Table 2 below. 【0143】 [Table 2] 【0144】 The adhesive layer obtained from the adhesive composition of the present invention exhibited a high etching rate against the cleaning agent composition and was confirmed to be suitably removable with the cleaning agent composition. 【0145】 [5] Adhesion test [5-1] Fabrication of the laminate [Example 1-1] A 300 mm silicon wafer (thickness: 770 μm) was used as the device-side wafer (semiconductor substrate). The adhesive composition obtained in Preparation Example 1-1 was applied by spin coating and heated at 120°C for 1.5 minutes (preheating treatment) to form an adhesive coating layer on the circuit surface of the silicon wafer such that the final thickness of the adhesive layer in the laminate was approximately 65 μm. On the other hand, a 300 mm glass wafer (thickness: 700 μm) was used as the carrier wafer (support) and the release agent composition obtained in Preparation Example 2 was applied by spin coating. By heating at 250°C for 5 minutes, a release layer was formed on the glass wafer such that the final thickness of the release layer in the laminate was approximately 200 nm. Thereafter, in a vacuum bonding apparatus, the semiconductor substrate and the support substrate were bonded together so as to sandwich the adhesive coating layer and the release layer, and a laminate was produced by heating at 200°C for 10 minutes with the semiconductor substrate side facing down on a hot plate (post-heat treatment). The bonding was performed at a temperature of 23°C, a reduced pressure of 1,000 Pa, and with a load of 30 N applied. 【0146】 [Example 1-2] A laminate was produced in the same manner as in Example 1-1, except that the adhesive composition obtained in Preparation Example 1-2 was used instead of the adhesive composition obtained in Preparation Example 1-1. 【0147】 [Example 1-3] A laminate was produced in the same manner as in Example 1-1, except that the adhesive composition obtained in Preparation Example 1-3 was used instead of the adhesive composition obtained in Preparation Example 1-1. 【0148】 [Comparative Example 1-1] The adhesive composition obtained in Comparative Preparation Example 1-1 was spin-coated on a 300 mm silicon wafer (thickness: 770 μm) as the wafer (semiconductor substrate) on the device side, and an adhesive coating layer was formed on the rotating surface of the silicon wafer so that the final thickness in the laminate would be approximately 65 μm. Then, the release agent coating layer was formed and the semiconductor substrate and the support substrate were bonded together under the same conditions as in Example 1-1 to produce a laminate. 【0149】 [Comparative Example 1-2] The adhesive composition obtained in Comparative Preparation Example 1-2 was spin-coated on a 300 mm silicon wafer (thickness: 770 μm) as the wafer (semiconductor substrate) on the device side, and the adhesive coating layer was formed on the rotating surface of the silicon wafer so that the final thickness of the adhesive layer in the laminate would be approximately 65 μm by heating at 110°C for 1.5 minutes (pre-heat treatment). Then, the release agent coating layer was formed and the semiconductor substrate and the support substrate were bonded together under the same conditions as in Example 1-1, except that the post-heat treatment time was 9 minutes, to produce a laminate. 【0150】 [Comparative Examples 1-3] A laminate was prepared in the same manner as in Example 1-1, except that the adhesive composition obtained in Comparative Preparation Example 1-3 was used instead of the adhesive composition obtained in Preparation Example 1-1. 【0151】 [Comparative Examples 1-4] A laminate was prepared in the same manner as in Example 1-1, except that the adhesive composition obtained in Comparative Preparation Example 1-4 was used instead of the adhesive composition obtained in Preparation Example 1-1. 【0152】 [5-2] Evaluation of Adhesion Adhesion was evaluated by visually checking for the presence or absence of voids from the glass wafer (support) side of the laminate. If no voids were found, the result was rated as good; if voids were found, it was rated as poor. As a result, no voids were observed in the laminates obtained in Examples 1-1 to 1-3 and Comparative Examples 1-1 to 1-4. 【0153】 [6] High temperature and high pressure treatment test [6-1] Fabrication of the laminate [Example 2-1] The laminate was fabricated in the same manner as in Example 1-1, except that a PI TEG 300mm silicon wafer (thickness: 770μm, bump diameter: 0.03mm, bump height: 0.04mm, bump pitch: 0.06×0.1mm) was used instead of a 300mm silicon wafer (thickness: 770μm). The resulting laminated silicon wafer was thinned to a thickness of 50 μm using a high-rigidity grinding machine. The thinned silicon wafer was then attached to dicing tape (DU-300, manufactured by Nitto Denko Corporation) with the thinned side facing down and fixed in place. The fixed laminate was cut into 4cm x 4cm pieces using a dicing machine, and then cut out as 4cm square laminate chips to be used in high-temperature and high-pressure processing tests. 【0154】 [Example 2-2] A 4 cm square chip of the laminate was cut out in the same manner as in Example 2-1, except that the adhesive composition obtained in Preparation Example 1-2 was used instead of the adhesive composition obtained in Preparation Example 1-1. 【0155】 [Examples 2-3] A 4 cm square chip of the laminate was cut out in the same manner as in Example 2-1, except that the adhesive composition obtained in Preparation Example 1-3 was used instead of the adhesive composition obtained in Preparation Example 1-1. 【0156】 [Comparative Example 2-1] A 4 cm square chip of the laminate was cut out in the same manner as in Example 2-1, except that the adhesive composition obtained in Comparative Preparation Example 1-1 was used instead of the adhesive composition obtained in Preparation Example 1-1. 【0157】 [Comparative Example 2-2] A 4 cm square chip of the laminate was cut out in the same manner as in Example 2-1, except that the adhesive composition obtained in Comparative Preparation Example 1-2 was used instead of the adhesive composition obtained in Preparation Example 1-1. 【0158】 [Comparative Example 2-3] A 4 cm square chip of the laminate was cut out in the same manner as in Example 2-1, except that the adhesive composition obtained in Comparative Preparation Example 1-3 was used instead of the adhesive composition obtained in Preparation Example 1-1. 【0159】 [Comparative Example 2-4] A 4 cm square chip of the laminate was cut out in the same manner as in Example 2-1, except that the adhesive composition obtained in Comparative Preparation Example 1-4 was used instead of the adhesive composition obtained in Preparation Example 1-1. 【0160】 [6-2] Evaluation of high-temperature and high-pressure processing Using a heat-sealing device, the chips of each laminate obtained in Examples 2-1, 2-2, 2-3, Comparative Example 2-1, Comparative Example 2-2, Comparative Example 2-3, and Comparative Example 2-4 were subjected to high-temperature and high-pressure treatment. The treatment was carried out in the following procedure. The glass wafer (support substrate) of the laminated chip is placed face down on a stage set to 60°C, and the temperature is 270°C and the pressure is 160 N / cm². 2 Under heating and pressing conditions with a processing time of 20 seconds, pressure was applied from the silicon wafer (semiconductor substrate) side in the perpendicular direction to the silicon wafer and glass wafer while heating was performed. The condition of each processed silicon wafer was observed through a glass wafer using an optical microscope, and the presence or absence of bump deformation was visually confirmed. Each laminate chip contained 5044 bumps, which were evaluated by measuring the number of deformed bumps according to the following criteria. The results are shown in Table 3 below. <Evaluation Criteria> A: Number of deformed bumps: 0 B: Number of deformed bumps: 1 to 10 C: Number of deformed bumps: 11-40 D: Number of deformed bumps: 41-70 E: Number of deformed bumps: 71-100 F: The number of deformed bumps is 101 or more. 【0161】 [Table 3] 【0162】 [7] Evaluation of laser peelability [7-1] Fabrication of the laminate [Example 3-1] A 100 mm silicon wafer (thickness: 770 μm) was used as the device wafer (semiconductor substrate). The adhesive composition obtained in Preparation Example 1-1 was applied by spin coating and heated at 120°C for 1.5 minutes (preheating treatment) to form an adhesive coating layer on the circuit surface of the silicon wafer such that the final thickness of the adhesive layer in the laminate was approximately 60 μm. On the other hand, a 100 mm glass wafer (thickness: 500 μm) was used as the carrier wafer (support) and the release agent composition obtained in Preparation Example 2 was applied by spin coating. By heating at 250°C for 5 minutes, a release layer was formed on the glass wafer such that the final thickness of the release layer in the laminate was approximately 200 nm. Subsequently, the semiconductor substrate and the support substrate were bonded together in a vacuum bonding apparatus, sandwiching the adhesive coating layer and the release layer between them. The laminate was then fabricated by heating the bonded substrate on a hot plate with the semiconductor substrate side down at 200°C for 10 minutes (post-heat treatment). The bonding was performed at a temperature of 23°C and a reduced pressure of 1,000 Pa. 【0163】 [Example 3-2] A laminate was prepared in the same manner as in Example 3-1, except that the adhesive composition obtained in Preparation Example 1-2 was used instead of the adhesive composition obtained in Preparation Example 1-1. 【0164】 [Example 3-3] A laminate was prepared in the same manner as in Example 3-1, except that the adhesive composition obtained in Preparation Example 1-3 was used instead of the adhesive composition obtained in Preparation Example 1-1. 【0165】 [7-2] Evaluation of laser peelability Using a laser irradiation device, a 308nm wavelength laser is applied to the delamination layer of the fixed laminate from the glass wafer side at a rate of 300mJ / cm². 2 The laminates were irradiated with a light source. Then, the feasibility of delamination was confirmed by manually lifting the support substrate. As a result, in each of the laminates obtained in Examples 3-1, 3-2, and 3-3, delamination was possible without any load by lifting the support substrate. 【0166】 The adhesive compositions obtained in Preparation Examples 1-1 to 1-3 contain a vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Co., Ltd.) with a viscosity of 100,000 mPa·s represented by the above formula (V), thereby containing a polymer (V) represented by the above formula (V) and having a weight-average molecular weight of 60,000 or more. As shown in the examples, the adhesive layers formed using the adhesive compositions obtained in Preparation Examples 1-1 to 1-3 were able to suitably bond the semiconductor substrate and the support substrate, suppress bump deformation under high temperature and pressure, and exhibit a high etching rate. Furthermore, the adhesive layers formed using the adhesive compositions obtained in Preparation Examples 1-1 to 1-3 could be easily peeled off from the semiconductor substrate and the support substrate. The adhesive layer formed using the adhesive composition obtained in Comparative Preparation Example 1-1 could suppress bump deformation under high temperature and pressure, but the etching rate was low. The adhesive layers formed using the adhesive compositions of Comparative Preparation Examples 1-3 and 1-4, which contained the release agent component (B) compared to the adhesive composition of Comparative Preparation Example 1-1, showed a slightly higher etching rate, but could not sufficiently suppress bump deformation under high temperature and pressure. In contrast, the adhesive compositions of Preparation Examples 1-1 to 1-3, in which the vinyl group-containing linear polydimethylsiloxane with a viscosity of 200 mPa·s represented by formula (V) and the vinyl group-containing linear polydimethylsiloxane with a viscosity of 100000 mPa·s represented by formula (W) in the adhesive compositions of Comparative Preparation Example 1-3 and Comparative Preparation Example 1-4 were replaced with vinyl group-containing linear polydimethylsiloxane with a viscosity of 100000 mPa·s represented by formula (V), were able to achieve both excellent bump deformation suppression and a high etching rate. The adhesive compositions obtained in Preparation Example 1-3 showed a good balance of improved bump deformation suppression effect and etching rate compared to the adhesive compositions obtained in each comparative preparation example. The adhesive composition obtained in Preparation Example 1-2 showed some clouding after preparation, but this did not pose a practical problem, and showed even greater improvement in bump deformation suppression effect and etching rate compared to the adhesive composition obtained in Preparation Example 1-3. Furthermore, the adhesive composition obtained in Preparation Example 1-1, while maintaining a high etching rate similar to the adhesive composition obtained in Preparation Example 1-2, was able to reduce the number of bump deformations to zero, further improving the bump deformation suppression effect compared to the adhesive composition obtained in Preparation Example 1-2. [Industrial applicability] 【0167】 According to the present invention, a semiconductor substrate with bumps and a support substrate can be suitably temporarily bonded, bump deformation due to external loads such as heating can be suppressed or mitigated, and a laminate having an adhesive layer exhibiting a high etching rate can be obtained, making it useful for the manufacture of processed semiconductor substrates. [Explanation of symbols] 【0168】 1 wafer 1a Bump 2 Adhesive layer 2a Adhesive coating layer 3. Exfoliation layer 4. Support substrate 12 Coating device 13 Heating device

Claims

[Claim 1] An adhesive composition comprising an adhesive component (S) and a release agent component (B) containing a polyorganosiloxane, The adhesive component (S) contains a polyorganosiloxane component (A) that hardens by a hydrosilylation reaction. The polyorganosiloxane component (A) contains a polymer (V) represented by the following formula (V) and having a weight-average molecular weight of 60,000 or more. An adhesive composition wherein the complex viscosity of the release agent component (B) is 3400 (Pa·s) or more. 【Chemistry 1】 (n is a positive integer representing the number of repeating units.) [Claim 2] The polyorganosiloxane component (A) is SiO ２ a siloxane unit (Q unit) represented by, R １ R ２ R ３ SiO １／２ a siloxane unit (M unit) represented by, R ４ R ５ SiO ２／２ a siloxane unit (D unit) represented by and R ６ SiO ３／２ a polyorganosiloxane (A1) containing one or more units selected from the group consisting of a siloxane unit (T unit) represented by, and a platinum group metal-based catalyst (A2) (however, R １ ~R ６ are groups or atoms bonded to a silicon atom, and each independently represents an alkyl group which may be substituted, an alkenyl group which may be substituted, or a hydrogen atom), The polyorganosiloxane (A1) is SiO ２ Siloxane units (Q' units) represented by R １ 'R ２ 'R ３ 'SiO １／２ Siloxane units (M' units) expressed as R ４ 'R ５ 'SiO ２／２ Siloxane units (D' units) and R are represented by these units. ６ 'SiO ３／２ A polyorganosiloxane (a1) containing one or more units selected from the group consisting of siloxane units (T' units) represented by the above, and at least one unit selected from the group consisting of M' units, D' units and T' units, and SiO ２ Siloxane units (Q'' units) expressed as R １ "R ２ "R ３ "SiO １／２ Siloxane units (M'' units) expressed as R ４ "R ５ "SiO ２／２ Siloxane units (D'' units) and R ６ "SiO ３／２ A polyorganosiloxane (a2) comprising one or more units selected from the group consisting of siloxane units (T'' units) represented by the above, and at least one unit selected from the group consisting of M'' units, D'' units and T'' units (however, R １ '~R ６ ' represents a group that bonds to a silicon atom, and each independently represents an optionally substituted alkyl group or an optionally substituted alkenyl group, R １ '~R ６ At least one of ' is an alkenyl group which may be substituted, R １ "~R ６ " represents a group or atom bonded to a silicon atom, and each independently represents an optionally substituted alkyl group or hydrogen atom, R １ "~R ６ (At least one of them is a hydrogen atom.) The adhesive composition according to claim 1, wherein the polyorganosiloxane (a1) contains the polymer (V). [Claim 3] The adhesive composition according to claim 1 or 2, wherein the weight-average molecular weight of the polymer (V) is 100,000 or more. [Claim 4] The adhesive composition according to any one of claims 1 to 3, wherein the mass ratio of the adhesive component (S) to the release agent component (B) is adhesive component (S):release agent component (B) = 50:50 to 93:

7. [Claim 5] The adhesive composition according to any one of claims 1 to 4, wherein the release agent component (B) is a polyorganosiloxane represented by the following formula (M1). 【Chemistry 2】 (n ４ (This indicates the number of repeating units and is a positive integer.) [Claim 6] A laminate comprising an adhesive layer interposed between a bumped semiconductor substrate and a support substrate, and in contact with the semiconductor substrate, A laminate in which the adhesive layer is a layer formed from the adhesive composition described in any one of claims 1 to 5. [Claim 7] A step of processing the semiconductor substrate in the laminate according to claim 6, A step of separating the support substrate and the processed semiconductor substrate, A method for manufacturing a semiconductor substrate, including the method described above. [Claim 8] A method for manufacturing a laminate, comprising manufacturing the laminate described in claim 6, The process of forming an adhesive coating layer that provides the aforementioned adhesive layer, The process involves heating the adhesive coating layer to form the adhesive layer, A method for manufacturing a laminate, including the following:

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