Adhesive composition, laminate, and method for manufacturing a processed semiconductor substrate

Abstract

A multilayer body which comprises a semiconductor substrate, a supporting substrate and a bonding layer that is provided between the semiconductor substrate and the supporting substrate, wherein: the bonding layer is formed of a cured product of an adhesive composition; the adhesive composition contains a polyorganosiloxane that has an alkenyl group bonded to a silicon atom and having 2 to 40 carbon atoms, a polyorganosiloxane that has an Si-H group, a platinum group metal catalyst and a crosslinking inhibitor; and the crosslinking inhibitor contains at least either a pyridine ring-containing compound or a phosphorus-containing organic compound.

Description

[Technical Field] 【0001】 The present invention relates to an adhesive composition, a laminate, a method for manufacturing a laminate, and a method for manufacturing a processed semiconductor substrate. [Background technology] 【0002】 Conventionally, semiconductor wafers have been integrated in a two-dimensional planar direction. To achieve even greater integration, there is a need for semiconductor integration technology that integrates (stacks) in a three-dimensional direction as well. This three-dimensional stacking is a technology that integrates multiple layers while connecting them with through silicon vias (TSVs). When integrating multiple layers, the side opposite to the circuit surface (i.e., the back surface) of each wafer to be integrated is thinned by polishing, and the thinned semiconductor wafers are stacked. 【0003】 Before thinning, the semiconductor wafer (also simply called a wafer here) is bonded to a support in order to be polished using a polishing device. This bonding is called temporary bonding because it must be easily removed after polishing. This temporary bonding must be easily removed from the support, as applying too much force during removal can cause the thinned semiconductor wafer to cut or deform. To prevent this, it must be easily removed. However, it is undesirable for the temporary bonding to detach or shift due to polishing stress during back-side polishing of the semiconductor wafer. Therefore, the required performance of the temporary bonding is to withstand the stress during polishing and to be easily removed after polishing. 【0004】 For temporary bonding, temporary adhesives containing components that harden by hydrosilylation reactions are used. For example, a temporary adhesive has been proposed that contains a component that hardens by hydrosilylation reactions (A), a polymerization inhibitor (B) whose 5% mass loss temperature in Tg-DTA is 80°C or higher, and a solvent (C) (see Patent Document 1). In this proposed technology, an acetylene alcohol such as 1,1-diphenyl-2-propyne-1-ol is used as the polymerization inhibitor (B). Polymerization inhibitors are also called crosslinking inhibitors. [Prior art documents] [Patent Documents] 【0005】 [Patent Document 1] International Publication No. 2019 / 212008 Brochure [Overview of the Initiative] [Problems that the invention aims to solve] 【0006】 When a temporary adhesive is used to temporarily bond a semiconductor wafer to a support, warping may occur in the resulting laminate formed by bonding the semiconductor wafer and support using the temporary adhesive. In a temporary adhesive (adhesive composition) utilizing a hydrosilylation reaction, the present inventors used 1,1-diphenyl-2-propyne-1-ol as a crosslinking inhibitor. As an example, a laminate obtained using this temporary adhesive exhibited a warp of 531 μm (see Comparative Example 1 in this specification). If the warping is excessive, it may become difficult to transport the substrate using a robot arm's vacuum chuck, making it impossible to manufacture the desired electronic device. Furthermore, the increased internal stress within the electronic device may cause damage to the device. 【0007】 The present invention has been made in view of the above circumstances, and aims to provide a laminate that can reduce warping more than when 1,1-diphenyl-2-propyne-1-ol is used as a crosslinking inhibitor, a method for manufacturing a processed semiconductor substrate using the laminate, an adhesive composition used for forming an adhesive layer in the laminate, and a method for manufacturing an adhesive layer using the adhesive composition. [Means for solving the problem] 【0008】 The inventors of the present invention conducted diligent studies to solve the aforementioned problems and, as a result, found that they could solve the aforementioned problems, and completed the present invention having the following gist. 【0009】 That is, the present invention includes the following. [1] A laminate having a semiconductor substrate, a support substrate, and an adhesive layer provided between the semiconductor substrate and the support substrate, where the adhesive layer is formed from a cured product of an adhesive composition, the adhesive composition contains a polyorganosiloxane having an alkenyl group with 2 to 40 carbon atoms bonded to a silicon atom, a polyorganosiloxane having a Si-H group, a platinum group metal-based catalyst, and a crosslinking inhibitor, and the crosslinking inhibitor contains at least one of a pyridine ring-containing compound and a phosphorus-containing organic compound. [2] The laminate according to [1], wherein the pyridine ring-containing compound contains a compound represented by the following formula (1), and the phosphorus-containing organic compound contains a compound represented by the following formula (2). [1] The laminate according to [1]. [Chemical formula] (In the above formula (1), R and R 2 each independently represents a hydrogen atom or an alkyl group that may have a substituent, or R 1 and R 2 together form an aromatic hydrocarbon ring that may have a substituent or may have an alkyl group that may have a substituent, or form -O-. R 3 and R 4 each independently represents a hydrogen atom or an alkyl group that may have a substituent. R 5 and R 6 each independently represents a hydrogen atom or an alkyl group that may have a substituent. R 7 and R 8 each independently represents a hydrogen atom or an alkyl group that may have a substituent. However, R 5 and R 7In lieu of the above definition, they may together form an aromatic hydrocarbon ring which may have substituents or alkyl groups. However, R 6 and R 8 (In lieu of the above definition, these may together form an aromatic hydrocarbon ring which may have substituents or alkyl groups.) [ka] (In formula (2) above, R 11 ~R 13 Each of these independently represents a hydrocarbon group that may have substituents. [3] The laminate according to [2], wherein the crosslinking inhibitor contains a compound represented by formula (1). [4] In equation (1) above, R 1 , R 2 , R 7 , and R 8 represents a hydrogen atom, and R 3 ~R 6 Each of these independently represents a hydrogen atom or an alkyl group, as described in [2] or [3]. [5] The laminate according to any one of [2] to [4], wherein the number of carbon atoms in each alkyl group in formula (1) is independently 1 to 12. [6] The laminate according to [2], wherein the crosslinking inhibitor contains a compound represented by formula (2). [7] In equation (2) above, R 11 ~R 13 The laminate according to [2] or [6], wherein each independently represents an optionally substituted alkyl group or an optionally substituted phenyl group. [8] The laminate according to [7], wherein the number of carbon atoms in each alkyl group in formula (2) is independently 1 to 12. [9] A method for manufacturing a processed semiconductor substrate, A first step in which the semiconductor substrate of the laminate described in any of [1] to [8] is processed, A second step involves separating the semiconductor substrate processed in the first step from the support substrate, A method for manufacturing a processed semiconductor substrate, including the method described above.

[10] An adhesive composition used for forming an adhesive layer in a laminate having a semiconductor substrate, a support substrate, and an adhesive layer provided between the semiconductor substrate and the support substrate, It contains a polyorganosiloxane having alkenyl groups with 2 to 40 carbon atoms bonded to silicon atoms, a polyorganosiloxane having Si-H groups, a platinum group metal catalyst, and a crosslinking inhibitor. The adhesive composition wherein the crosslinking inhibitor contains at least one of a pyridine ring-containing compound and a phosphorus-containing organic compound.

[11] The pyridine ring-containing compound contains a compound represented by the following formula (1): The phosphorus-containing organic compound contains a compound represented by the following formula (2): The adhesive composition described in

[10] . [ka] (In formula (1) above, R 1 and R 2 Each independently represents a hydrogen atom or an alkyl group which may have substituents, or R 1 and R 2 Together, they form an aromatic hydrocarbon ring which may have substituents or alkyl groups, or they form an -O-. R 3 and R 4 Each of these independently represents a hydrogen atom or an alkyl group which may have substituents. R 5 and R 6 Each of these independently represents a hydrogen atom or an alkyl group which may have substituents. R 7 and R 8 Each of these independently represents a hydrogen atom or an alkyl group which may have substituents. However, R 5 and R 7In lieu of the above definition, they may together form an aromatic hydrocarbon ring which may have substituents or alkyl groups. However, R 6 and R 8 (In lieu of the above definition, these may together form an aromatic hydrocarbon ring which may have substituents or alkyl groups.) [ka] (In formula (2) above, R 11 ~R 13 Each of these independently represents a hydrocarbon group that may have substituents.

[12] The adhesive composition according to

[11] , wherein the crosslinking inhibitor contains a compound represented by formula (1).

[13] In equation (1) above, R 1 , R 2 , R 7 , and R 8 represents a hydrogen atom, and R 3 ~R 6 The adhesive composition according to

[11] or

[12] , wherein each independently represents a hydrogen atom or an alkyl group.

[14] The adhesive composition according to any one of

[11] to

[13] , wherein the number of carbon atoms in each alkyl group in formula (1) is independently 1 to 12.

[15] The adhesive composition according to

[11] , wherein the crosslinking inhibitor contains a compound represented by formula (2).

[16] In equation (2) above, R 11 ~R 13 Each independently represents either an optionally substituted alkyl group or an optionally substituted phenyl group. The adhesive composition described in

[11] or

[15] .

[17] The adhesive composition according to

[16] , wherein the number of carbon atoms in each alkyl group in formula (2) is independently 1 to 12.

[18] A step of applying an adhesive composition according to any one of

[10] to

[17] onto a semiconductor substrate or a support substrate to form an adhesive coating layer, The semiconductor substrate and the support substrate are bonded together via the adhesive coating layer, The semiconductor substrate, the adhesive coating layer, and the support substrate are heated, and an adhesive layer is formed from the adhesive coating layer. A method for manufacturing a laminate, including the following:

[19] The method for manufacturing a laminate according to

[18] , wherein the heating is performed from the semiconductor substrate side or the support substrate side. [Effects of the Invention] 【0010】 According to the present invention, it is possible to provide a laminate that can reduce warping compared to when 1,1-diphenyl-2-propyne-1-ol is used as a crosslinking inhibitor, a method for manufacturing a processed semiconductor substrate using the laminate, an adhesive composition used for forming an adhesive layer in the laminate, and a method for manufacturing an adhesive layer using the adhesive composition. [Brief explanation of the drawing] 【0011】 [Figure 1] This is a schematic cross-sectional view of an example of the laminate of the present invention. [Figure 2] This is a schematic cross-sectional view of another example of the laminate of the present invention. [Modes for carrying out the invention] 【0012】 (Laminated structure) The laminate of the present invention comprises at least a semiconductor substrate, a support substrate, and an adhesive layer, and optionally other layers. 【0013】 <Semiconductor substrates> The main materials that make up the entire semiconductor substrate are not particularly limited as long as they are used in this type of application, but examples include silicon, silicon carbide, and compound semiconductors. The shape of the semiconductor substrate is not particularly limited, but for example, it is disc-shaped. The disc-shaped semiconductor substrate does not need to have a perfectly circular surface; for example, the outer edge of the semiconductor substrate may have a straight section called an orientation flat, or a notch. The thickness of the disc-shaped semiconductor substrate can be determined appropriately depending on the intended use of the semiconductor substrate and is not particularly limited, but for example, it is 500 to 1,000 μm. The diameter of the disc-shaped semiconductor substrate can be determined appropriately depending on the intended use of the semiconductor substrate and is not particularly limited, but for example, it is 100 to 1,000 mm. 【0014】 The semiconductor substrate may have bumps. Bumps are protruding terminals. In a laminate, if the semiconductor substrate has bumps, the semiconductor substrate has bumps on the support substrate side. In semiconductor substrates, bumps are typically formed on the surface on which circuits are formed. The circuits may be single-layer or multi-layer. The shape of the circuits is not particularly limited. In a semiconductor substrate, the side opposite to the side with bumps (the back surface) is the side that is subjected to processing. The material, size, shape, structure, and density of the bumps on the semiconductor substrate are not particularly limited. Examples of bumps include ball bumps, printed bumps, stud bumps, and plated bumps. Typically, the bump height, radius, and pitch are determined appropriately based on conditions such as a bump height of approximately 1-200 μm, a bump radius of 1-200 μm, and a bump pitch of 1-500 μm. Examples of materials for the bumps include low-melting-point solder, high-melting-point solder, tin, indium, gold, silver, and copper. The bumps may be composed of a single component or multiple components. More specifically, examples include Sn-based alloy plating such as SnAg bumps, SnBi bumps, Sn bumps, and AuSn bumps. Furthermore, the bump may have a laminated structure that includes a metal layer made of at least one of these components. 【0015】 An example of a semiconductor substrate is a silicon wafer with a diameter of approximately 300 mm and a thickness of approximately 770 μm. 【0016】 <Support substrate> The support substrate is not particularly limited as long as it is a material that can support the semiconductor substrate when the semiconductor substrate is being processed, but examples include glass support substrates and silicon support substrates. 【0017】 The shape of the support substrate is not particularly limited, but for example, it can be disc-shaped. The disc-shaped support substrate does not need to have a perfectly circular surface; for example, the outer circumference of the support substrate may have a straight section called an orientation flat, or a notch. The thickness of the disc-shaped support substrate can be appropriately determined according to the size of the semiconductor substrate and is not particularly limited, but for example, it is 500 to 1,000 μm. The diameter of the disc-shaped support substrate can be appropriately determined according to the size of the semiconductor substrate, etc., and is not particularly limited, but for example, it is 100 to 1,000 mm. 【0018】 Examples of support substrates include glass wafers or silicon wafers with a diameter of approximately 300 mm and a thickness of approximately 700 μm. 【0019】 Furthermore, when delamination in a laminate is performed by light irradiation, a substrate that is light-transmitting to the light used is used as the support substrate. 【0020】 <Adhesive layer> The adhesive layer is formed from the cured product of the adhesive composition. 【0021】 <<Adhesive Composition>> The adhesive composition contains at least a polyorganosiloxane (a1), a polyorganosiloxane (a2), a platinum group metal catalyst (A2), and a crosslinking inhibitor (A3), and optionally contains other components. Furthermore, adhesive compositions are also covered by this invention. 【0022】 <<<Polyorganosiloxane (a1) and polyorganosiloxane (a2)>>> Polyorganosiloxane (a1) is a polyorganosiloxane having alkenyl groups with 2 to 40 carbon atoms bonded to silicon atoms. Polyorganosiloxane (a2) is a polyorganosiloxane having a Si-H group. Here, the alkenyl group having 2 to 40 carbon atoms may be substituted. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, heteroaryl groups, and the like. An example of a polyorganosiloxane (a1) having alkenyl groups with 2 to 40 carbon atoms bonded to a silicon atom is the siloxane unit (Q' unit) represented by SiO2, R 1 'R 2 'R 3 'SiO 1 / 2 Siloxane units (M' units) are represented as R 4 'R 5 'SiO 2 / 2 Siloxane units (D' units) and R are represented by these units. 6 'SiO 3 / 2 The polyorganosiloxane (a1') contains one or more units selected from the group consisting of siloxane units (T' units) represented by , and also contains at least one unit selected from the group consisting of M' units, D' units, and T' units. An example of a polyorganosiloxane (a2) having a Si-H group is a siloxane unit (Q'' unit) represented by SiO2, R 1 "R 2 "R 3 SiO 1 / 2 Siloxane units (M'' units) are expressed as R 4 "R 5 SiO 2 / 2Siloxane units (D'' units) and R 6 SiO 3 / 2 This polyorganosiloxane (a2') contains one or more units selected from the group consisting of siloxane units (T'' units) represented by , and also contains at least one unit selected from the group consisting of M'' units, D'' units, and T'' units. 【0023】 R 1 '~R 6 ' represents a group that bonds to a silicon atom, and each independently represents an optionally substituted alkyl group or an optionally substituted alkenyl group, R 1 '~R 6 At least one of the ' groups is an alkenyl group which may be substituted. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, heteroaryl groups, etc. 【0024】 R 1 "~R 6 " represents a group or atom bonded to a silicon atom, and each independently represents an optionally substituted alkyl group or hydrogen atom, but R 1 "~R 6 At least one of the atoms is a hydrogen atom. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, heteroaryl groups, etc. 【0025】 The alkyl group may be linear, branched, or cyclic, but linear or branched alkyl groups are preferred. The number of carbon atoms is not particularly limited, but is usually 1 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less. 【0026】 Specific examples of substituted linear or branched alkyl groups include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, tert-butyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl group, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, 3-methyl-n-pentyl group, 4-methyl-n-pentyl group Examples of suitable groups include the methyl group, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl-n-butyl group, 2,2-dimethyl-n-butyl group, 2,3-dimethyl-n-butyl group, 3,3-dimethyl-n-butyl group, 1-ethyl-n-butyl group, 2-ethyl-n-butyl group, 1,1,2-trimethyl-n-propyl group, 1,2,2-trimethyl-n-propyl group, 1-ethyl-1-methyl-n-propyl group, and 1-ethyl-2-methyl-n-propyl group, but are not limited to these. The number of carbon atoms is usually 1 to 14, preferably 1 to 10, and more preferably 1 to 6. Among these, the methyl group is particularly preferred. 【0027】 Specific examples of cyclic alkyl groups that may be substituted include cyclopropyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, cyclopentyl group, 1-methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3-dimethyl-cyclopropyl group, 1-ethyl-cyclopropyl group, 2-ethyl-cyclopropyl group, cyclohexyl group, 1-methyl-cyclopentyl group, 2-methyl-cyclopentyl group, 3-methyl-cyclopentyl group, 1-ethyl-cyclobutyl group, 2-ethyl-cyclobutyl group, 3-ethyl-cyclobutyl group, 1,2-dimethyl-cyclobutyl group, 1,3-dimethyl-cyclobutyl group, 2,2-dimethyl-cyclobutyl group, 2,3-dimethyl-cyclobutyl group, 2,4-dimethyl-cyclobutyl group, 3,3-dimethyl-cyclobutyl group Examples of cycloalkyl groups include cycloalkyl groups such as ethyl-cyclobutyl group, 1-n-propyl-cyclopropyl group, 2-n-propyl-cyclopropyl group, 1-i-propyl-cyclopropyl group, 2-i-propyl-cyclopropyl group, 1,2,2-trimethyl-cyclopropyl group, 1,2,3-trimethyl-cyclopropyl group, 2,2,3-trimethyl-cyclopropyl group, 1-ethyl-2-methyl-cyclopropyl group, 2-ethyl-1-methyl-cyclopropyl group, 2-ethyl-2-methyl-cyclopropyl group, and 2-ethyl-3-methyl-cyclopropyl group, as well as bicycloalkyl groups such as bicyclobutyl group, bicyclopentyl group, bicyclohexyl group, bicycloheptyl group, bicyclooctyl group, bicyclononyl group, and bicyclodecyl group, but are not limited to these. The number of carbon atoms is usually 3 to 14, preferably 4 to 10, and more preferably 5 to 6. 【0028】 The alkenyl group may be linear or branched, and its carbon number is not particularly limited, but is usually 2 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less. 【0029】 Specific examples of substituted linear or branched alkenyl groups include, but are not limited to, vinyl, allyl, buttenyl, and pentenyl groups. Their carbon number is typically 2 to 14, preferably 2 to 10, and more preferably 1 to 6. Among these, ethenyl and 2-propenyl groups are particularly preferred. Specific examples of substituted cyclic alkenyl groups include, but are not limited to, cyclopentenyl and cyclohexenyl. The number of carbon atoms is usually 4 to 14, preferably 5 to 10, and more preferably 5 to 6. 【0030】 Polyorganosiloxane (a1') contains one or more units selected from the group consisting of Q' units, M' units, D' units, and T' units, and also contains at least one unit selected from the group consisting of M' units, D' units, and T' units. As polyorganosiloxane (a1'), two or more polyorganosiloxanes that satisfy these conditions may be used in combination. 【0031】 Two or more preferred combinations selected from the group consisting of Q' units, M' units, D' units, and T' units include, but are not limited to, (Q' units and M' units), (D' units and M' units), (T' units and M' units), and (Q' units, T' units, and M' units). 【0032】 Furthermore, when polyorganosiloxane (a1') contains two or more polyorganosiloxanes, the combinations of (Q' units and M' units) and (D' units and M' units), (T' units and M' units) and (D' units and M' units), and (Q' units, T' units and M' units) and (T' units and M' units) are preferred, but are not limited to these. 【0033】 Polyorganosiloxane (a2') contains one or more units selected from the group consisting of Q'' units, M'' units, D'' units, and T'' units, and also contains at least one unit selected from the group consisting of M'' units, D'' units, and T'' units. As polyorganosiloxane (a2'), two or more polyorganosiloxanes that satisfy these conditions may be used in combination. 【0034】 Two or more preferred combinations selected from the group consisting of Q" units, M" units, D" units, and T" units include, but are not limited to, (M" units and D" units), (Q" units and M" units), and (Q" units, T" units, and M" units). 【0035】 Polyorganosiloxane (a1') is composed of siloxane units in which an alkyl group and / or an alkenyl group is bonded to the silicon atom, R 1 '~R 6 The proportion of alkenyl groups in the total substituents represented by ' is preferably 0.1 to 50.0 mol%, more preferably 0.5 to 30.0 mol%, and the remaining R 1 '~R 6 ' can be an alkyl group. 【0036】 Polyorganosiloxane (a2') is composed of siloxane units in which an alkyl group and / or a hydrogen atom are bonded to the silicon atom, R 1 "~R 6 The proportion of hydrogen atoms in all substituents and substituted atoms represented by " is preferably 0.1 to 50.0 mol%, more preferably 10.0 to 40.0 mol%, and the remaining R 1 "~R 6 " can be an alkyl group. 【0037】 The weight-average molecular weight of polysiloxanes such as polyorganosiloxane (a1) and polyorganosiloxane (a2) is not particularly limited, but is usually 500 to 1,000,000, and is preferably 5,000 to 50,000 from the viewpoint of reproducibly realizing the effects of the present invention. The weight-average molecular weight, number-average molecular weight, and dispersity of the polyorganosiloxane can be measured, for example, using a GPC apparatus (EcoSEC, HLC-8320GPC manufactured by Tosoh Corporation) and GPC columns (TSKgel SuperMultipore HZ-N, TSKgel SuperMultipore HZ-H manufactured by Tosoh Corporation), setting the column temperature to 40°C, using tetrahydrofuran as the eluent (elution solvent), setting the flow rate (flow velocity) to 0.35 mL / min, and using polystyrene (manufactured by Showa Denko K.K., Shodex) as the standard sample. 【0038】 The viscosities of the polyorganosiloxane (a1) and the polyorganosiloxane (a2) are not particularly limited, but are usually 10 to 1,000,000 (mPa·s) respectively, and from the viewpoint of reproducibly realizing the effects of the present invention, they are preferably 50 to 10,000 (mPa·s). The viscosities of the polyorganosiloxane (a1) and the polyorganosiloxane (a2) are values measured with an E-type rotational viscometer at 25°C. 【0039】 The polyorganosiloxane (a1) and the polyorganosiloxane (a2) react with each other by a hydrosilylation reaction to form a film. Therefore, the curing mechanism is different from, for example, that via a silanol group, and thus, neither siloxane needs to contain a silanol group or a functional group that forms a silanol group by hydrolysis such as an alkyloxy group. 【0040】 In the adhesive composition, the molar ratio of the alkenyl group contained in the polyorganosiloxane (a1) to the hydrogen atom constituting the Si-H bond contained in the polyorganosiloxane (a2) (alkenyl group: hydrogen atom constituting the Si-H bond) is preferably in the range of 1.0:0.5 to 1.0:0.66. 【0041】 <<<Platinum group metal-based catalyst (A2)>>> The platinum group metal-based catalyst (A2) is a platinum-based metal catalyst. Such platinum-based metal catalysts are catalysts for promoting the hydrosilylation reaction between the alkenyl group of polyorganosiloxane (a1) and the Si-H group of polyorganosiloxane (a2). 【0042】 Specific examples of platinum-based metal catalysts include known platinum-based compounds (platinum or compounds containing platinum). Specific examples include platinum fine powder, platinum black, chloroplatinic acid, alcohol-modified chloroplatinic acid, complexes of chloroplatinic acid with diolefins, platinum-olefin complexes, platinum-carbonyl complexes (e.g., platinum-bis(acetate), platinum-bis(acetylacetonate)), chloroplatinic acid-alkenylsiloxane complexes (e.g., chloroplatinic acid-divinyltetramethyldisiloxane complex, chloroplatinic acid-tetravinyltetramethylcyclotetrasiloxane complex), platinum-alkenylsiloxane complexes (e.g., platinum-divinyltetramethyldisiloxane complex, platinum-tetravinyltetramethylcyclotetrasiloxane complex), and complexes of chloroplatinic acid with acetylene alcohols. Among these, platinum-alkenylsiloxane complexes are particularly preferred due to their high effect in promoting the hydrosilylation reaction. These hydrosilylation catalysts may be used individually or in combination of two or more. 【0043】 The alkenylsiloxane used in platinum-alkenylsiloxane complexes is not particularly limited, but examples include 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, alkenylsiloxane oligomers obtained by substituting some of the methyl groups of these alkenylsiloxanes with ethyl groups, phenyl groups, etc., and alkenylsiloxane oligomers obtained by substituting the vinyl groups of these alkenylsiloxanes with allyl groups, hexenyl groups, etc. In particular, 1,3-divinyl-1,1,3,3-tetramethyldisiloxane is preferred because the resulting platinum-alkenylsiloxane complex has good stability. 【0044】 The content of the platinum group metal catalyst (A2) in the adhesive composition is not particularly limited, but is usually in the range of 1.0 to 50.0 ppm relative to the total mass of polyorganosiloxane (a1) and polyorganosiloxane (a2). 【0045】 <<<Cross-linking inhibitor (A3)>>> The crosslinking inhibitor (A3) contained in the adhesive composition contains at least one of a pyridine ring-containing compound and a phosphorus-containing organic compound. By including at least one of a pyridine ring-containing compound and a phosphorus-containing organic compound as the crosslinking inhibitor (A3), warping of the laminate can be reduced compared to when 1,1-diphenyl-2-propyne-1-ol is used as the crosslinking inhibitor. The inventors speculate that this is because the curing rate of the adhesive composition utilizing the hydrosilylation reaction can be controlled, thereby relieving stress in the laminate. The inventors speculate that this is related to the fact that pyridine ring-containing compounds and phosphorus-containing organic compounds have a higher coordination ability with platinum group metal catalysts than 1,1-diphenyl-2-propyne-1-ol. 【0046】 The pyridine ring-containing compound is not particularly limited, but it is preferable to include a compound represented by the following formula (1) in that it has a superior effect in reducing warpage. The phosphorus-containing organic compound is not particularly limited, but it is preferable to include a compound represented by the following formula (2) in that it has a superior effect in reducing warpage. 【0047】 [ka] 【0048】 (In formula (1), R 1 and R 2 Each independently represents a hydrogen atom or an alkyl group which may have substituents, or R 1 and R 2combines to form an aromatic hydrocarbon ring which may have an alkyl group which may have a substituent, or forms -O-. R 3 and R 4 each independently represents a hydrogen atom or an alkyl group which may have a substituent. R 5 and R 6 each independently represents a hydrogen atom or an alkyl group which may have a substituent. R 7 and R 8 each independently represents a hydrogen atom or an alkyl group which may have a substituent. However, R 5 and R 7 may, instead of the above definition, combine to form an aromatic hydrocarbon ring which may have an alkyl group which may have a substituent. However, R 6 and R 8 may, instead of the above definition, combine to form an aromatic hydrocarbon ring which may have an alkyl group which may have a substituent.) 【0049】 The number of carbon atoms of the alkyl group in formula (1) is not particularly limited, and examples thereof include, each independently, 1 to 12. The alkyl group in formula (1) may be linear or branched. Examples of the alkyl group in formula (1) include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, a pentyl group, a hexyl group, an octyl group, a nonyl group, etc. Examples of the substituent in the alkyl group which may have a substituent in formula (1) include a halogen atom, an alkoxy group, an acyl group, a hydroxy group, a carboxy group, an amino group, an imino group, a cyano group, a phenyl group, a thiol group, a sulfo group, a nitro group, an aryl group, a heteroaryl group, etc. Examples of the alkoxy group include an alkoxy group having 1 to 6 carbon atoms. Examples of the acyl group include an acyl group having 2 to 7 carbon atoms. 【0050】 R 1 and R 2 Examples of the aromatic hydrocarbon ring formed by R R 5 and R 7 Examples of the aromatic hydrocarbon ring formed by R R 6 and R 8 Examples of the aromatic hydrocarbon ring formed by R 【0051】 In formula (1), R 1 , R 2 , R 7 , and R 8 preferably represent a hydrogen atom, and R 3 ~R 6 preferably each independently represent a hydrogen atom or an alkyl group. 【0052】 For example, R 2 and R<​​​​​​​​​​​​​​​​​​​​​​​ [ka] (In formula (1-1), R 1 ~R 6 Each of these independently represents a hydrogen atom or an alkyl group which may have substituents. In formula (1-2), R 1 ~R 4 Each of these independently represents a hydrogen atom or an alkyl group which may have substituents. 21 and R 22 Each independently represents an alkyl group which may have substituents. m and n each independently represent an integer from 0 to 4. If m is 2 or greater, multiple R 21 They may be the same or different. If n is 2 or greater, there may be multiple R 22 They may be the same or they may be different. In formula (1-3), R 3 ~R 6 Each of these independently represents a hydrogen atom or an alkyl group which may have substituents. In formula (1-4), R 3 ~R 6 Each of these independently represents a hydrogen atom or an alkyl group which may have substituents. 23 represents an alkyl group which may have substituents. n represents an integer from 0 to 2. If n is 2, multiple R 23 They may be the same or they may be different. 【0055】 [ka] 【0056】 (In formula (2), R 11 ~R 13 Each of these independently represents a hydrocarbon group that may have substituents. Note that P represents the phosphorus atom. 【0057】 For example, R 11 ~R 13Each of these independently represents either an optionally substituted alkyl group or an optionally substituted phenyl group. 【0058】 R 11 ~R 13 The number of carbon atoms in the alkyl group in the alkyl group which may have substituents is not particularly limited, but for example, each can be independently 1 to 12. The alkyl group may be linear or branched. Examples of alkyl groups include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, pentyl, hexyl, octyl, and nonyl groups. 【0059】 R 11 ~R 13 Examples of substituents in hydrocarbon groups that may have substituents include halogen atoms, alkoxy groups, acyl groups, hydroxyl groups, carboxyl groups, amino groups, imino groups, cyano groups, phenyl groups, thiol groups, sulfo groups, nitro groups, aryl groups, and heteroaryl groups. Examples of alkoxy groups include alkoxy groups having 1 to 6 carbon atoms. Examples of acyl groups include acyl groups having 2 to 7 carbon atoms. 【0060】 For example, R 11 ~R 13 They are the same base. 【0061】 The content of at least one of the pyridine ring-containing compound and the phosphorus-containing organic compound in the adhesive composition is not particularly limited, but from the viewpoint of reproducibly realizing the effects of the present invention, it is preferably 0.01 to 10% by mass, and more preferably 0.1 to 0.5% by mass, relative to the nonvolatile content. 【0062】 <<<Other ingredients>>> Other components, though not limited to those mentioned above, include, for example, solvents and stripping agents. 【0063】 <<<<Solution>>>> The adhesive composition may contain a solvent for purposes such as adjusting viscosity. Specific examples of such solvents include, but are not limited to, aliphatic hydrocarbons, aromatic hydrocarbons, and ketones. 【0064】 More specifically, examples of solvents include, but are not limited to, hexane, heptane, octane, nonane, decane, undecane, dodecane, isododecane, menthane, limonene, toluene, xylene, mesitylene, cumene, MIBK (methyl isobutyl ketone), butyl acetate, diisobutyl ketone, 2-octanone, 2-nonanone, and 5-nonanone. Such solvents can be used individually or in combination of two or more. 【0065】 If the adhesive composition contains a solvent, its content is determined appropriately considering the viscosity of the desired composition, the application method used, the thickness of the film to be produced, etc., but it is generally in the range of 10 to 90% by mass of the total composition. 【0066】 <<<<<Removal agent ingredients>>>>> The adhesive composition may contain a release agent component. For example, if the laminate does not have a release layer, the adhesive composition contains a release agent component. By including a release agent component in the adhesive composition, the resulting adhesive layer can be peeled off reproducibly and effectively. Typical release agent components include non-curable polyorganosiloxanes, and specific examples include, but are not limited to, epoxy group-containing polyorganosiloxanes, methyl group-containing polyorganosiloxanes, and phenyl group-containing polyorganosiloxanes. Herein, in this specification, "non-curable" means that it does not undergo a hydrosilylation reaction. Furthermore, polydimethylsiloxane can be used as a release agent component. The polydimethylsiloxane may be modified. Examples of polydimethylsiloxane that may be modified include, but are not limited to, epoxy group-containing polydimethylsiloxane, unmodified polydimethylsiloxane, and phenyl group-containing polydimethylsiloxane. 【0067】 Preferred examples of polyorganosiloxanes that act as a release agent include, but are not limited to, epoxy group-containing polyorganosiloxanes, methyl group-containing polyorganosiloxanes, and phenyl group-containing polyorganosiloxanes. 【0068】 The weight-average molecular weight of the polyorganosiloxane, which is the release agent component, is not particularly limited, but is usually 100,000 to 2,000,000, preferably 200,000 to 1,200,000, and more preferably 300,000 to 900,000. The degree of dispersion is not particularly limited, but is usually 1.0 to 10.0, and from the viewpoint of achieving suitable release reproducibly, it is preferably 1.5 to 5.0, and more preferably 2.0 to 3.0. The weight-average molecular weight and degree of dispersion can be measured by the method described above for polyorganosiloxane. The viscosity of the polyorganosiloxane, which is the release agent component, is not particularly limited, but is usually 1,000 to 2,000,000 mm². 2 The viscosity is given by / s. The viscosity of the polyorganosiloxane, which is a release agent component, is expressed as kinematic viscosity, centistokes (cSt) = mm². 2 It is / s. Viscosity (mPa·s) is compared to density (g / cm³). 3 It can also be calculated by dividing by ). In other words, the value can be determined from the viscosity and density measured with an E-type rotational viscometer at 25°C, and the kinematic viscosity (mm²) 2 / s) = viscosity (mPa s) / density (g / cm 3 It can be calculated using the formula ). 【0069】 Examples of epoxy group-containing polyorganosiloxanes include R 111 R112 SiO 2 / 2 Siloxane units (D) are represented by these units. 10 Examples include those containing units. 【0070】 R 111 R is a group that bonds to a silicon atom and represents an alkyl group. 112 R is a group that bonds to a silicon atom and represents an epoxy group or an organic group containing an epoxy group. Specific examples of alkyl groups include R. 1 '~R 6 The above examples can be given regarding '. In an organic group containing an epoxy group, the epoxy group may be an independent epoxy group that does not condense with other rings, or it may be an epoxy group that forms a fused ring with other rings, such as a 1,2-epoxycyclohexyl group. Specific examples of organic groups containing epoxy groups include, but are not limited to, 3-glycidoxypropyl and 2-(3,4-epoxycyclohexyl)ethyl. A preferred example of an epoxy group-containing polyorganosiloxane is, but is not limited to, epoxy group-containing polydimethylsiloxane. 【0071】 Epoxy group-containing polyorganosiloxanes are the siloxane units (D) described above. 10 It includes units, but D 10 In addition to units, Q units, M units, and / or T units may also be included. A specific example of an epoxy group-containing polyorganosiloxane is D 10 Polyorganosiloxanes consisting only of units, D 10 Polyorganosiloxane containing units and Q units, D 10 Polyorganosiloxane containing units and M units, D 10 Polyorganosiloxanes containing units and T units, D 10 Polyorganosiloxane containing units, Q units, and M units, D 10 Polyorganosiloxane containing units, M units, and T units, D 10Examples include polyorganosiloxanes containing units, Q units, M units, and T units. 【0072】 The epoxy group-containing polyorganosiloxane is preferably an epoxy group-containing polydimethylsiloxane with an epoxy value of 0.1 to 5. Its weight-average molecular weight is not particularly limited, but is usually between 1,500 and 500,000, and is preferably 100,000 or less from the viewpoint of suppressing precipitation in the composition. 【0073】 Specific examples of epoxy group-containing polyorganosiloxanes include, but are not limited to, those represented by formulas (E1) to (E3). 【0074】 [ka] (m1 and n1 are positive integers, representing the number of each repeating unit.) 【0075】 [ka] (m2 and n2 are positive integers indicating the number of repeating units, and R is an alkylene group with 1 to 10 carbon atoms.) 【0076】 [ka] (m3, n3, and o3 represent the number of repeating units and are positive integers; R is an alkylene group with 1 to 10 carbon atoms.) 【0077】 Examples of methyl group-containing polyorganosiloxanes include R 210 R 220 SiO 2 / 2 Siloxane units (D) are represented by these units. 200 Units) containing, preferably R 221 R 221 SiO 2 / 2 Siloxane units (D) are represented by these units. 20 Examples include those containing units. 【0078】 R 210 and R 220 These are groups that bond to a silicon atom, and each independently represents an alkyl group, but at least one of them is a methyl group, and the examples given above can be given as specific examples of alkyl groups. R 221 R is a group that bonds to a silicon atom and represents an alkyl group. Specific examples of alkyl groups include those mentioned above. Among them, R 221 A methyl group is preferred as the component. A preferred example of a methyl group-containing polyorganosiloxane is, but is not limited to, polydimethylsiloxane. 【0079】 Methyl group-containing polyorganosiloxanes are the siloxane units (D) mentioned above. 200 Unit or D 20 It includes units, but D 200 Units and D 20 In addition to units, Q units, M units, and / or T units may also be included. 【0080】 In one embodiment, a specific example of a methyl group-containing polyorganosiloxane is D 200 Polyorganosiloxanes consisting only of units, D 200 Polyorganosiloxane containing units and Q units, D 200 Polyorganosiloxane containing units and M units, D 200 Polyorganosiloxanes containing units and T units, D 200 Polyorganosiloxane containing units, Q units, and M units, D 200 Polyorganosiloxane containing units, M units, and T units, D 200 Examples include polyorganosiloxanes containing units, Q units, M units, and T units. 【0081】 A specific example of a methyl group-containing polyorganosiloxane is D 20 Polyorganosiloxanes consisting only of units, D 20 Polyorganosiloxane containing units and Q units, D 20Polyorganosiloxane containing units and M units, D 20 Polyorganosiloxanes containing units and T units, D 20 Polyorganosiloxane containing units, Q units, and M units, D 20 Polyorganosiloxane containing units, M units, and T units, D 20 Examples include polyorganosiloxanes containing units, Q units, M units, and T units. 【0082】 Specific examples of methyl group-containing polyorganosiloxanes include, but are not limited to, those represented by formula (M1). 【0083】 [ka] (n4 represents the number of repeating units and is a positive integer.) 【0084】 Examples of phenyl group-containing polyorganosiloxanes include R 31 R 32 SiO 2 / 2 Siloxane units (D) are represented by these units. 30 Examples include those containing units. 【0085】 R 31 R is a group that bonds to a silicon atom and represents a phenyl group or an alkyl group. 32 This is a group that bonds to a silicon atom, representing a phenyl group. Specific examples of alkyl groups include those mentioned above, but a methyl group is preferred. 【0086】 Phenyl group-containing polyorganosiloxanes are the siloxane units (D) mentioned above. 30 It includes units, but D 30 In addition to units, Q units, M units, and / or T units may also be included. 【0087】 A specific example of a phenyl group-containing polyorganosiloxane is D 30 Polyorganosiloxanes consisting only of units, D 30 Polyorganosiloxane containing units and Q units, D30 Polyorganosiloxane containing units and M units, D 30 Polyorganosiloxanes containing units and T units, D 30 Polyorganosiloxane containing units, Q units, and M units, D 30 Polyorganosiloxane containing units, M units, and T units, D 30 Examples include polyorganosiloxanes containing units, Q units, M units, and T units. 【0088】 Specific examples of phenyl group-containing polyorganosiloxanes include, but are not limited to, those represented by formula (P1) or (P2). 【0089】 [ka] (m5 and n5 are positive integers indicating the number of each repeating unit.) 【0090】 [ka] (m6 and n6 are positive integers that indicate the number of each repeating unit.) 【0091】 The polyorganosiloxane, which is the stripping agent component, may be a commercially available product or a synthesized product. Commercially available polyorganosiloxanes include, for example, Wacker Chem's WACKERSILICONE FLUID AK series (AK50, AK 350, AK 1000, AK 10000, AK 1000000) and GENIOPLAST GUM; Shin-Etsu Chemical Co., Ltd.'s dimethyl silicone oil (KF-96L, KF-96A, KF-96, KF-96H, KF-69, KF-965, KF-968) and cyclic dimethyl silicone oil (KF-995); Gelest's epoxy-containing polyorganosiloxanes (product names CMS-227, ECMS-327); Shin-Etsu Chemical Co., Ltd.'s epoxy-containing polyorganosiloxanes (KF-101, KF-1001, KF-1005, X-22-343); and Dow Corning's products. Examples include, but are not limited to, epoxy group-containing polyorganosiloxanes (BY16-839); phenyl group-containing polyorganosiloxanes (PMM-1043, PMM-1025, PDM-0421, PDM-0821) manufactured by Gellest, phenyl group-containing polyorganosiloxanes (KF50-3000CS) manufactured by Shin-Etsu Chemical Co., Ltd., and phenyl group-containing polyorganosiloxanes (TSF431, TSF433) manufactured by Momentive. 【0092】 The content of the release agent component in the adhesive composition is not particularly limited. 【0093】 The viscosity of the adhesive composition is not particularly limited, but is typically 500 to 20,000 mPa·s at 25°C, preferably 1,000 to 5,000 mPa·s. The viscosity of the adhesive composition can be adjusted by changing the type and ratio of solvents used, the concentration of film components, etc., taking into consideration various factors such as the application method used and the desired film thickness. 【0094】 For the purpose of removing foreign matter, the solvent or solution used in the manufacturing of the adhesive composition may be filtered using a filter or the like during the manufacturing process or after all the components have been mixed. 【0095】 The thickness of the adhesive layer is not particularly limited, but is usually 5 to 500 μm. From the viewpoint of maintaining film strength, it is preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 30 μm or more. From the viewpoint of avoiding non-uniformity caused by thick films, it is preferably 200 μm or less, more preferably 150 μm or less, even more preferably 120 μm or less, and still more preferably 70 μm or less. 【0096】 The method for forming an adhesive layer from an adhesive composition is not particularly limited, but examples include the method for manufacturing a laminate described later. 【0097】 <Exfoliation layer> The laminate may have a release layer. In a laminate having a release layer, for example, the semiconductor substrate and the support substrate are separated by light irradiation of the release layer. The release layer is formed, for example, from a release agent composition. 【0098】 <<Removal agent composition>> The release agent composition, for example, contains at least an organic resin or a polynuclear phenol derivative, and optionally contains other components. The organic resin is preferably one that can exhibit suitable peelability, and when the semiconductor substrate and the support substrate are separated by light irradiation of the peeling layer, the organic resin preferably absorbs light and undergoes a change, such as decomposition, necessary to improve the peelability. 【0099】 A laminate having a release layer formed from a release agent composition can be peeled off without applying excessive load for peeling, for example, by irradiating the release layer with a laser. The release layer in the laminate exhibits a decrease in adhesive strength upon irradiation, for example, by laser irradiation. In other words, in the laminate, for example, while a semiconductor substrate is being processed such as thinning, the semiconductor substrate is suitably supported on a laser-transmitting support substrate via an adhesive layer and a release layer. After processing is complete, by irradiating the support substrate with a laser, the laser that has passed through the support substrate is absorbed by the release layer, causing alteration (e.g., separation) of the release layer at the interface between the release layer and the adhesive layer, at the interface between the release layer and the support substrate, or within the release layer itself. As a result, suitable delamination can be achieved without applying excessive load for delamination. 【0100】 Examples of organic resins include novolac resins. Further details will be provided later. 【0101】 In a preferred embodiment, the release agent composition contains at least a novolac resin and, if necessary, other components such as a crosslinking agent, an acid generator, an acid, a surfactant, or a solvent. In another preferred embodiment, the stripping agent composition contains at least a polynuclear phenol derivative and a crosslinking agent, and optionally other components such as an acid generator, acid, surfactant, or solvent. In another preferred embodiment, the release agent composition contains at least an organic resin and a branched polysilane, and optionally other components such as a crosslinking agent, an acid generator, an acid, a surfactant, or a solvent. 【0102】 <<<Novolac resin>>> Novolac resins are resins obtained by condensing at least one of a phenolic compound, a carbazole compound, and an aromatic amine compound with at least one of an aldehyde compound, a ketone compound, and a divinyl compound under acid catalyst. 【0103】 Examples of phenolic compounds include phenols, naphthols, antrols, and hydroxypyrenes. Examples of phenols include phenol, cresol, xylenol, resorcinol, bisphenol A, p-tert-butylphenol, p-octylphenol, 9,9-bis(4-hydroxyphenyl)fluorene, and 1,1,2,2-tetrakis(4-hydroxyphenyl)ethane. Examples of naphthols include 1-naphthol, 2-naphthol, 1,5-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, and 9,9-bis(6-hydroxynaphthyl)fluorene. Examples of antrols include 9-antrol. Examples of hydroxypyrenes include 1-hydroxypyrene and 2-hydroxypyrene. Examples of carbazole compounds include carbazole, 1,3,6,8-tetranitrocarbazole, 3,6-diaminocarbazole, 3,6-dibromo-9-ethylcarbazole, 3,6-dibromo-9-phenylcarbazole, 3,6-dibromocarbazole, 3,6-dichlorocarbazole, 3-amino-9-ethylcarbazole, 3-bromo-9-ethylcarbazole, 4,4'bis(9H-carbazole-9-yl)biphenyl, 4-glycidylcarbazole, 4-hydroxycarbazole, and 9-(1H-benzotriazole-1-ylmethyl Examples include ((9-ethylcarbazole-3-yl)methylene)-9H-carbazole, 9-acetyl-3,6-diiodocarbazole, 9-benzoylcarbazole, 9-benzoylcarbazole-6-dicarboxyaldehyde, 9-benzylcarbazole-3-carboxyaldehyde, 9-methylcarbazole, 9-phenylcarbazole, 9-vinylcarbazole, potassium carbazole, carbazole-N-carbonyl chloride, N-ethylcarbazole-3-carboxyaldehyde, and N-((9-ethylcarbazole-3-yl)methylene)-2-methyl-1-indlinylamine. Examples of aromatic amine compounds include diphenylamine and N-phenyl-1-naphthylamine. These can be used individually or in combination of two or more types. These may have substituents. For example, they may have substituents on the aromatic ring. 【0104】 Examples of aldehyde compounds include formaldehyde, paraformaldehyde, acetaldehyde, propylaldehyde, butyraldehyde, isobutyraldehyde, valeraldehyde, caproaldehyde, 2-methylbutyraldehyde, hexylaldehyde, undecanealdehyde, 7-methoxy-3,7-dimethyloctylaldehyde, cyclohexanealdehyde, 3-methyl-2-butyraldehyde, glyoxal, malonaldehyde, succinaldehyde, glutaraldehyde, and azipi Examples include saturated aliphatic aldehydes such as ammonium aldehydes, unsaturated aliphatic aldehydes such as acrolein and methacrolein, heterocyclic aldehydes such as furfural and pyridine aldehyde, and aromatic aldehydes such as benzaldehyde, naphthyl aldehyde, anthryl aldehyde, phenanthryl aldehyde, salicyl aldehyde, phenylacetaldehyde, 3-phenylpropionaldehyde, tolyl aldehyde, (N,N-dimethylamino)benzaldehyde, and acetoxybenzaldehyde. Among these, aromatic aldehydes are preferred. Examples of ketone compounds include diaryl ketone compounds such as diphenyl ketone, phenyl naphthyl ketone, dinaphthyl ketone, phenyl tolyl ketone, and ditolyl ketone. Examples of divinyl compounds include divinylbenzene, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, 5-vinylnoborna-2-ene, divinylpyrene, limonene, and 5-vinylnorbornadiene. These can be used individually or in combination of two or more types. 【0105】 Novolac resin is a type of novolac resin that absorbs and alters upon exposure to light irradiated from the support substrate side. This alteration is, for example, photodegradation. 【0106】 The novolak resin contains, for example, at least any one of a structural unit represented by the following formula (C1-1), a structural unit represented by the following formula (1-2), and a structural unit represented by the following formula (C1-3). 【0107】 【Chemical formula】 【0108】 In the formula, C 1 represents a group derived from an aromatic compound containing a nitrogen atom, and C 2 represents a group containing a tertiary carbon atom having at least one selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in the side chain, and C 3 represents a group derived from an aliphatic polycyclic compound, and C 4 represents a group derived from phenol, a group derived from bisphenol, a group derived from naphthol, a group derived from biphenyl, or a group derived from bisphenol. 【0109】 That is, the novolak resin contains, for example, one kind or two or more kinds of the following structural units. · A structural unit (formula (C1-1)) having a bond between a group derived from an aromatic compound containing a nitrogen atom and a group containing a tertiary carbon atom having at least one selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in the side chain · A structural unit (formula (C1-2)) having a bond between a group derived from an aromatic compound containing a nitrogen atom and a group derived from an aliphatic polycyclic compound · A structural unit ((formula (C1-3)) having a bond between a group derived from phenol, a group derived from bisphenol, a group derived from naphthol, a group derived from biphenyl, or a group derived from bisphenol and a group containing a tertiary carbon atom having at least one selected from the group consisting of a quaternary carbon atom and an aromatic ring in the side chain 【0110】 In one preferred embodiment, the novolac resin comprises either or both of the following structural units: a structural unit having a bond between a group derived from an aromatic compound containing a nitrogen atom and a group containing a tertiary carbon atom having at least one selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in its side chain (formula (C1-1)); and a structural unit having a bond between a group derived from an aromatic compound containing a nitrogen atom and a group derived from an aliphatic polycyclic compound (formula (C1-2)). 【0111】 C 1 The group derived from an aromatic compound containing a nitrogen atom can be, for example, a group derived from carbazole, a group derived from N-phenyl-1-naphthylamine, a group derived from N-phenyl-2-naphthylamine, etc., but is not limited to these. C 2 A group containing a tertiary carbon atom having at least one selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring as a side chain can be, for example, a group derived from 1-naphthaldehyde, a group derived from 1-pyrenecarboxyaldehyde, a group derived from 4-(trifluoromethyl)benzaldehyde, a group derived from acetaldehyde, etc., but is not limited to these. C 3 The group derived from the aliphatic polycyclic compound may be, but is not limited to, a group derived from dicyclopentadiene. C 4 This group is derived from phenol, bisphenol, naphthol, biphenyl, or biphenol. 【0112】 In a preferred embodiment, the novolac resin includes, for example, a structural unit represented by formula (C1-1-1) as shown below. 【0113】 [ka] 【0114】 In formula (C1-1-1), R 901 and R902 The terms represent substituents that substitute for a ring, and each independently represents a halogen atom, a nitro group, a cyano group, an amino group, a hydroxyl group, a carboxyl group, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. R 903 This represents a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. R 904 This represents a hydrogen atom, an optionally substituted aryl group, or an optionally substituted heteroaryl group. R 905 This represents an optionally substituted alkyl group, an optionally substituted aryl group, or an optionally substituted heteroaryl group. R 904 The base and R 905 These groups may bond with each other to form a divalent group. Examples of substituents on alkyl and alkenyl groups include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, and heteroaryl groups. Substituents for aryl and heteroaryl groups include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, alkyl groups, and alkenyl groups. h 1 and h 2 Each of these independently represents an integer between 0 and 3. 【0115】 The number of carbon atoms in the optionally substituted alkyl group and optionally substituted alkenyl group is usually 40 or less, preferably 30 or less, and more preferably 20 or less, from the viewpoint of solubility. The number of carbon atoms in the substituted aryl and heteroaryl groups is usually 40 or less, preferably 30 or less, and more preferably 20 or less, from the viewpoint of solubility. 【0116】 Examples of halogen atoms include fluorine, chlorine, bromine, and iodine. 【0117】 Specific examples of alkyl groups that may be substituted include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, t-butyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, and 3-methyl-n-pentyl group. Examples include, but are not limited to, the following groups: 4-methyl-n-pentyl group, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl-n-butyl group, 2,2-dimethyl-n-butyl group, 2,3-dimethyl-n-butyl group, 3,3-dimethyl-n-butyl group, 1-ethyl-n-butyl group, 2-ethyl-n-butyl group, 1,1,2-trimethyl-n-propyl group, 1,2,2-trimethyl-n-propyl group, 1-ethyl-1-methyl-n-propyl group, 1-ethyl-2-methyl-n-propyl group, etc. 【0118】 Specific examples of alkenyl groups that may be substituted include ethenyl group, 1-propenyl group, 2-propenyl group, 1-methyl-1-ethenyl group, 1-butenyl group, 2-butenyl group, 3-butenyl group, 2-methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl-1-propenyl group, 1-methyl-2-propenyl group, 1-pentenyl group, 2-pentenyl group, 3-pentenyl group, 4-pentenyl group, 1-n-propylethenyl group, 1-methyl-1-butenyl group, 1-methyl-2-butenyl group, and 1-methyl-3-butenyl group. Nyl group, 2-ethyl-2-propenyl group, 2-methyl-1-butenyl group, 2-methyl-2-butenyl group, 2-methyl-3-butenyl group, 3-methyl-1-butenyl group, 3-methyl-2-butenyl group, 3-methyl-3-butenyl group, 1,1-dimethyl-2-propenyl group, 1-i-propylethenyl group, 1,2-dimethyl-1-propenyl group, 1,2-dimethyl-2-propenyl group, 1-cyclopentenyl group, 2-cyclopentenyl group, 3-cyclopentenyl group, 1-hexenyl group, 2-hexenyl group, 3-hexenyl group, 4-hexenyl group, 5-hexenyl group Xenyl group, 1-methyl-1-pentenyl group, 1-methyl-2-pentenyl group, 1-methyl-3-pentenyl group, 1-methyl-4-pentenyl group, 1-n-butylethenyl group, 2-methyl-1-pentenyl group, 2-methyl-2-pentenyl group, 2-methyl-3-pentenyl group, 2-methyl-4-pentenyl group, 2-n-propyl-2-propenyl group, 3-methyl-1-pentenyl group, 3-methyl-2-pentenyl group, 3-methyl-3-pentenyl group, 3-methyl-4-pentenyl group, 3-ethyl-3-butenyl group, 4-methyl-1-pentenyl group, 4-methyl-2-pentenyl group, 4-methyl-3-pentenyl group, 4-methyl-4-pentenyl group, 1,1-dimethyl-2-butenyl group, 1,1-dimethyl-3-butenyl group, 1,2-dimethyl-1-butenyl group, 1,2-dimethyl-2-butenyl group, 1,2-dimethyl-3-butenyl group, 1-methyl-2-ethyl-2-propenyl group, 1-s-butylethenyl group, 1,3-dimethyl-1-butenyl group, 1,3-dimethyl-2-butenyl group, 1,3-dimethyl-3-butenyl group, 1-i-butylethenyl group, 2,2-dimethyl-3-butenyl group, 2,3-dimethyl-1-butenyl group, 2,3-dimethyl-2-butenyl group, 2,3-dimethyl-3-butenyl group, 2-i-propyl-2-propenyl group, 3,3-dimethyl-1-butenyl group, 1-ethyl-1-butenyl group, 1-ethyl-2-butenyl group, 1-ethyl-3-butenyl group, 1-n-propyl-1-propenyl group, 1-n-propyl-2-propenyl group, 2-ethyl-1-butenyl group, 2-ethyl-2-butenyl group, 2-ethyl-3-butenyl group, 1,1,2-trimethyl-2-propenyl group, 1-tert-butylethenyl group, 1-methyl-1-ethyl-2-propenyl group, 1-ethyl-2-methyl-1-propenyl group, 1-ethyl-2-methyl-2-propenyl group, 1-i-propyl-1-propenyl group Examples include, but are not limited to, 1-i-propyl-2-propenyl group, 1-methyl-2-cyclopentenyl group, 1-methyl-3-cyclopentenyl group, 2-methyl-1-cyclopentenyl group, 2-methyl-2-cyclopentenyl group, 2-methyl-3-cyclopentenyl group, 2-methyl-4-cyclopentenyl group, 2-methyl-5-cyclopentenyl group, 2-methylene-cyclopentyl group, 3-methyl-1-cyclopentenyl group, 3-methyl-2-cyclopentenyl group, 3-methyl-3-cyclopentenyl group, 3-methyl-4-cyclopentenyl group, 3-methyl-5-cyclopentenyl group, 3-methylene-cyclopentyl group, 1-cyclohexenyl group, 2-cyclohexenyl group, and 3-cyclohexenyl group. 【0119】 Specific examples of aryl groups that may be substituted include, but are not limited to, phenyl group, 2-methylphenyl group, 3-methylphenyl group, 4-methylphenyl group, 2-chlorophenyl group, 3-chlorophenyl group, 4-chlorophenyl group, 2-fluorophenyl group, 3-fluorophenyl group, 4-fluorophenyl group, 4-methoxyphenyl group, 4-ethoxyphenyl group, 4-nitrophenyl group, 4-cyanophenyl group, 1-naphthyl group, 2-naphthyl group, biphenyl-4-yl group, biphenyl-3-yl group, biphenyl-2-yl group, 1-anthryl group, 2-anthryl group, 9-anthryl group, 1-phenanthryl group, 2-phenanthryl group, 3-phenanthryl group, 4-phenanthryl group, and 9-phenanthryl group. 【0120】 Specific examples of heteroaryl groups that may be substituted include, but are not limited to, 2-thienyl, 3-thienyl, 2-furanyl, 3-furanyl, 2-oxazolyl, 4-oxazolyl, 5-oxazolyl, 3-isoxazolyl, 4-isoxazolyl, 5-isoxazolyl, 2-thiazolyl, 4-thiazolyl, 5-thiazolyl, 3-isothiazolyl, 4-isothiazolyl, and 5-isothiazolyl groups. 【0121】 The following are specific examples of structural units represented by formula (C1-1-1), but are not limited to these. 【0122】 [ka] 【0123】 In a preferred embodiment, the novolac resin includes, for example, a structural unit represented by formula (C1-1-2) below, as a structural unit represented by formula (C1-1). 【0124】 [ka] 【0125】 In formula (C1-1-2), Ar 901 and Ar 902 each independently represent an aromatic ring such as a benzene ring or a naphthalene ring, and R 901 ~R 905 as well as h 1 and h 2 represent the same meaning as described above. 【0126】 Hereinafter, specific examples of the structural unit represented by formula (C1-1-2) will be given, but it is not limited thereto. 【0127】 【Chemical formula】 【0128】 In a preferred embodiment, the novolak resin contains, as the structural unit represented by formula (C1-2), for example, the structural unit represented by the following formula (C1-2-1) or (1-2-2). 【0129】 【Chemical formula】 【0130】 In the above formula, R 906 ~R 909 are substituents bonded to the ring, and each independently represents a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxy group, an optionally substituted alkyl group, an optionally substituted alkenyl group or an optionally substituted aryl group. Specific examples and preferred carbon numbers of the halogen atom, the optionally substituted alkyl group, the optionally substituted alkenyl group and the optionally substituted aryl group are the same as those described above, and h 3 ~h 6 each independently represents an integer of 0 to 3, and R 901 ~R 903 as well as h 1 and h 2 represent the same meaning as described above. 【0131】 The following are specific examples of structural units represented by formulas (C1-2-1) and (C1-2-2), but are not limited to these. 【0132】 [ka] 【0133】 The following are specific examples of structural units represented by formula (C1-3), but are not limited to these. 【0134】 [ka] 【0135】 As mentioned above, novolac resins are resins obtained by condensing at least one of a phenolic compound, a carbazole compound, and an aromatic amine compound with at least one of an aldehyde compound, a ketone compound, and a divinyl compound under acid catalysis. In this condensation reaction, for example, an aldehyde compound or ketone compound is typically used in a ratio of 0.1 to 10 equivalents per equivalent of the benzene ring constituting the ring of the carbazole compound. 【0136】 In the above condensation reaction, an acid catalyst is usually used. Examples of acid catalysts include, but are not limited to, mineral acids such as sulfuric acid, phosphoric acid, and perchloric acid; organic sulfonic acids such as p-toluenesulfonic acid and p-toluenesulfonic acid monohydrate; and carboxylic acids such as formic acid and oxalic acid. The amount of acid catalyst cannot be specified in general, as it is determined appropriately depending on the type of acid used, etc., but it is usually determined appropriately from the range of 0.001 to 10,000 parts by mass per 100 parts by mass of carbazole compound. 【0137】 The above condensation reaction can sometimes be carried out without a solvent if either the starting compound or the acid catalyst is a liquid, but it is usually carried out using a solvent. Such solvents are not particularly limited as long as they do not inhibit the reaction, but typical examples include ether compounds such as tetrahydrofuran and cyclic ether compounds such as dioxane. 【0138】 The reaction temperature is usually determined appropriately within the range of 40°C to 200°C, and the reaction time cannot be specified in general terms as it varies depending on the reaction temperature, but it is usually determined appropriately within the range of 30 minutes to 50 hours. 【0139】 After the reaction is complete, if necessary, the novolac resin is purified and isolated according to standard procedures and used in the preparation of the release agent composition. A person skilled in the art can determine the manufacturing conditions for novolac resin without undue burden based on the above description and common technical knowledge, and therefore can manufacture novolac resin. 【0140】 The weight-average molecular weight of organic resins such as novolac resins is usually 500 to 200,000. From the viewpoint of ensuring solubility in solvents and good mixing with branched polysilanes when formed into a film to obtain a uniform film, it is preferably 100,000 or less, more preferably 50,000 or less, even more preferably 10,000 or less, even more preferably 5,000 or less, and even more preferably 3,000 or less. From the viewpoint of improving the strength of the film, it is preferably 600 or more, more preferably 700 or more, even more preferably 800 or more, even more preferably 900 or more, and even more preferably 1,000 or more. In this invention, the weight-average molecular weight, number-average molecular weight, and degree of dispersion of organic resins such as novolac resins, which are polymers, can be measured, for example, using a GPC instrument (EcoSEC, HLC-8320GPC manufactured by Tosoh Corporation) and a GPC column (TSKgel SuperMultiporeHZ-N, TSKgel SuperMultiporeHZ-H manufactured by Tosoh Corporation), with a column temperature of 40°C, tetrahydrofuran as the eluent (elution solvent), a flow rate (flow rate) of 0.35 mL / min, and polystyrene (manufactured by Sigma-Aldrich) as the standard sample. 【0141】 As the organic resin contained in the above release agent composition, a novolak resin is preferable. Therefore, as the organic resin, the above release agent composition preferably contains a novolak resin alone. However, for the purpose of adjusting film physical properties and the like, other polymers may be contained together with the novolak resin. Examples of such other polymers include polyacrylate ester compounds, polymethacrylate ester compounds, polyacrylamide compounds, polymethacrylamide compounds, vinyl compounds, polystyrene compounds, polymer maleimide compounds, polymaleic anhydride, polyacrylonitrile compounds, and the like. 【0142】 The content of the novolak resin in the release agent composition is not particularly limited, but is preferably 70% by mass or more based on the total amount of polymers contained in the release agent composition. The content of the novolak resin in the release agent composition is not particularly limited, but is preferably 50 to 100% by mass based on the film constituent components. In the present invention, the film constituent components mean components other than the solvent contained in the composition. 【0143】 <<<Multi-nuclear phenol derivative>>> The multi-nuclear phenol derivative is represented by, for example, the following formula (P). 【0144】 【Chemical formula】 In formula (P), Ar represents an arylene group, and the number of carbon atoms thereof is not particularly limited, but is usually 6 to 60. From the viewpoint of preparing a release agent composition with excellent uniformity and obtaining a more flat release layer with good reproducibility, it is preferably 30 or less, more preferably 20 or less, even more preferably 18 or less, and still more preferably 12 or less. 【0145】 Specific examples of such arylene groups include 1,2-phenylene, 1,3-phenylene, 1,4-phenylene; 1,5-naphthalenediyl, 1,8-naphthalenediyl, 2,6-naphthalenediyl, 2,7-naphthalenediyl, 1,2-anthracenediyl, 1,3-anthracenediyl, 1,4-anthracenediyl, 1,5-anthracenediyl, 1,6-anthracenediyl, 1,7-anthracenediyl, 1,8-anthracenediyl, and 2,3-anthracenediyl. Examples include, but are not limited to, groups derived by removing two hydrogen atoms from the aromatic ring of fused ring aromatic hydrocarbon compounds such as diyl, 2,6-anthracenediyl, 2,7-anthracenediyl, 2,9-anthracenediyl, 2,10-anthracenediyl, and 9,10-anthracenediyl groups; and groups derived by removing two hydrogen atoms from the aromatic ring of ring-linked ring aromatic hydrocarbon compounds such as biphenyl-4,4'-diyl and paraterphenyl-4,4"-diyl groups. 【0146】 From the viewpoint of obtaining a laminate that exhibits good peelability and allows for good separation of the support substrate with good reproducibility, the polynuclear phenol derivative represented by formula (P) is preferably a polynuclear phenol derivative represented by formula (P-1), more preferably a polynuclear phenol derivative represented by formula (P-1-1), and even more preferably a polynuclear phenol derivative represented by formula (P1). 【0147】 [ka] 【0148】 The content of the polynuclear phenol derivative in the release agent composition is not particularly limited, but it is preferably 50 to 100% by mass relative to the film components. 【0149】 <<<Branched-chain polysilane>>> The above-mentioned stripping agent composition may contain branched polysilane. The branched polysilane has Si-Si bonds and a branched structure. When the above-mentioned release agent composition contains the branched polysilane, the resulting release layer, which cannot be suitably removed by organic solvents, acids, or chemicals used in the manufacture of semiconductor devices (alkaline developer, hydrogen peroxide, etc.), can be suitably removed by the cleaning agent composition. As a result, after separating the semiconductor substrate and support substrate of the laminate, the residue of the release layer on the substrate can be suitably removed by washing each substrate with the cleaning agent composition. Although the reason is not entirely clear, depending on the type of end groups (end substituents (atoms)) of the polysilane, the polysilane can react with organic resins and crosslink. Furthermore, since branched polysilanes have more end groups (end substituents (atoms)) than linear polysilanes, it is thought that branched polysilanes have more crosslinking sites than linear polysilanes. It is presumed that moderate and suitable curing via these more crosslinking sites in branched polysilanes makes it possible to achieve both the property of being unsuitably removed by organic solvents, acids, and chemicals used in the manufacture of semiconductor devices (alkaline developers, hydrogen peroxide, etc.) and the property of being suitablely removed by cleaning agent compositions. 【0150】 The branched polysilane preferably contains a structural unit represented by formula (B). 【0151】 [ka] 【0152】 In formula (B), R BThe group represents a hydrogen atom, a hydroxyl group, a silyl group, or an organic group. Specific examples of such organic groups include hydrocarbon groups (optionally substituted alkyl groups, optionally substituted alkenyl groups, optionally substituted aryl groups, optionally substituted aralkyl groups), and ether groups corresponding to these hydrocarbon groups (optionally substituted alkoxy groups, optionally substituted aryloxy groups, optionally substituted aralkyloxy groups, etc.). However, the organic group in question is usually a hydrocarbon group such as an alkyl group, alkenyl group, aryl group, or aralkyl group. Furthermore, hydrogen atoms, hydroxyl groups, alkoxy groups, silyl groups, etc., are often substituted at their terminal ends. 【0153】 The substituted alkyl group may be linear, branched, or cyclic. Specific examples of substituted linear or branched alkyl groups include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, tert-butyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl group, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, 3-methyl-n-pentyl group, and 4-methyl-n-pentyl group. Examples include ethyl group, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl-n-butyl group, 2,2-dimethyl-n-butyl group, 2,3-dimethyl-n-butyl group, 3,3-dimethyl-n-butyl group, 1-ethyl-n-butyl group, 2-ethyl-n-butyl group, 1,1,2-trimethyl-n-propyl group, 1,2,2-trimethyl-n-propyl group, 1-ethyl-1-methyl-n-propyl group, 1-ethyl-2-methyl-n-propyl group, etc., but are not limited to these, and the number of carbon atoms is usually 1 to 14, preferably 1 to 10, and more preferably 1 to 6. Specific examples of cyclic alkyl groups that may be substituted include cyclopropyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, cyclopentyl group, 1-methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3-dimethyl-cyclopropyl group, 1-ethyl-cyclopropyl group, 2-ethyl-cyclopropyl group, cyclohexyl group, 1-methyl-cyclopentyl group, 2-methyl-cyclopentyl group, 3-methyl-cyclopentyl group, 1-ethyl-cyclobutyl group, 2-ethyl-cyclobutyl group, 3-ethyl-cyclobutyl group, 1,2-dimethyl-cyclobutyl group, 1,3-dimethyl-cyclobutyl group, 2,2-dimethyl-cyclobutyl group, 2,3-dimethyl-cyclobutyl group, 2,4-dimethyl-cyclobutyl group, 3,3- Examples of cycloalkyl groups include dimethyl-cyclobutyl group, 1-n-propyl-cyclopropyl group, 2-n-propyl-cyclopropyl group, 1-i-propyl-cyclopropyl group, 2-i-propyl-cyclopropyl group, 1,2,2-trimethyl-cyclopropyl group, 1,2,3-trimethyl-cyclopropyl group, 2,2,3-trimethyl-cyclopropyl group, 1-ethyl-2-methyl-cyclopropyl group, 2-ethyl-1-methyl-cyclopropyl group, 2-ethyl-2-methyl-cyclopropyl group, 2-ethyl-3-methyl-cyclopropyl group, and other cycloalkyl groups, as well as bicycloalkyl groups such as bicyclobutyl group, bicyclopentyl group, bicyclohexyl group, bicycloheptyl group, bicyclooctyl group, bicyclononyl group, and bicyclodecyl group, but are not limited to these. The number of carbon atoms is usually 3 to 14, preferably 4 to 10, and more preferably 5 to 6. 【0154】 The alkenyl group may be linear, branched, or cyclic. Specific examples of substituted linear or branched alkenyl groups include, but are not limited to, vinyl groups, allyl groups, buttenyl groups, and pentenyl groups. The number of carbon atoms is usually 2 to 14, preferably 2 to 10, and more preferably 1 to 6. Specific examples of substituted cyclic alkenyl groups include, but are not limited to, cyclopentenyl and cyclohexenyl, and their carbon number is usually 4 to 14, preferably 5 to 10, and more preferably 5 to 6. 【0155】 Specific examples of substituted aryl groups include, but are not limited to, phenyl, 4-methylphenyl, 3-methylphenyl, 2-methylphenyl, 3,5-dimethylphenyl, 1-naphthyl, and 2-naphthyl groups. The number of carbon atoms is usually 6 to 20, preferably 6 to 14, and more preferably 6 to 12. 【0156】 Specific examples of substituted aralkyl groups include, but are not limited to, benzyl, phenethyl, and phenylpropyl groups. Preferably, a substituted aralkyl group is a group in which one hydrogen atom of a C1-C4 alkyl group is substituted with an aryl group having C6-C20. 【0157】 The substituted alkoxy group may have a linear, branched, or cyclic alkyl moiety. Specific examples of substituted linear or branched alkoxy groups include, but are not limited to, methoxy, ethoxy, propoxy, isopropoxy, butoxy, t-butoxy, and pentyloxy groups. The number of carbon atoms is usually 1 to 14, preferably 1 to 10, and more preferably 1 to 6. Specific examples of substituted cyclic alkoxy groups include, but are not limited to, cyclopentyloxy and cyclohexyloxy, and their carbon number is usually 3 to 14, preferably 4 to 10, and more preferably 5 to 6. 【0158】 Specific examples of substituted aryloxy groups include, but are not limited to, phenoxy, 1-naphthyloxy, and 2-naphthyloxy. The number of carbon atoms is usually 6 to 20, preferably 6 to 14, and more preferably 6 to 10. 【0159】 Specific examples of substituted aralkyloxy groups include, but are not limited to, benzyloxy, phenethyloxy, and phenylpropyloxy. Preferably, a substituted aralkyloxy group is a group in which one hydrogen atom of an alkyloxy group having 1 to 4 carbon atoms is replaced with an aryl group having 6 to 20 carbon atoms. 【0160】 Specific examples of silyl groups include silyl groups, disilanyl groups, and trisilanyl groups, but are not limited to these. The number of silicon atoms is usually 1 to 10, preferably 1 to 6. 【0161】 R B However, in the case of the above-mentioned organic group or silyl group, at least one of its hydrogen atoms may be substituted with a substituent. Specific examples of such substituents include hydroxyl groups, alkyl groups, aryl groups, and alkoxy groups. 【0162】 From the viewpoint of suppressing unintended delamination when the laminate is brought into contact with an organic solvent, an acid, or a chemical solution used in the manufacture of semiconductor devices (such as alkaline developer or hydrogen peroxide), and from the viewpoint of suitably removing the residue of the delamination layer on the substrate when the semiconductor substrate and support substrate of the laminate are separated and then washed with a cleaning agent composition, R B The group is preferably an alkyl group or an aryl group, more preferably an aryl group, even more preferably a phenyl group, a 1-naphthyl group or a 2-naphthyl group, and even more preferably a phenyl group. 【0163】 The branched-chain polysilane may contain structural units represented by formula (B), as well as structural units represented by formula (S) and formula (N). However, from the viewpoint of suppressing unintended peeling when the laminate is brought into contact with an organic solvent, an acid, or a chemical solution used in the manufacture of semiconductor devices (such as an alkaline developer or hydrogen peroxide), and from the viewpoint of suitably removing the residue of the peeling layer on the substrate when the semiconductor substrate and support substrate of the laminate are separated and then washed with a cleaning agent composition, the content of structural units represented by formula (B) in the branched-chain polysilane is usually 50 mol% or more, preferably 60 mol% or more, more preferably 70 mol% or more, even more preferably 80 mol% or more, even more preferably 90% or more, and even more preferably 95 mol% or more of the total structural units. 【0164】 [ka] (R S1 and S2 R B (This expresses the same meaning.) 【0165】 The terminal groups (terminal substituents (atoms)) of branched polysilanes are usually hydrogen atoms, hydroxyl groups, halogen atoms (such as chlorine atoms), alkyl groups, aryl groups, alkoxy groups, silyl groups, etc. Among these, hydroxyl groups, methyl groups, and phenyl groups are most common, with methyl groups being preferred, and the terminal group may be a trimethylsilyl group. 【0166】 In one embodiment, the average degree of polymerization of the branched polysilane is typically 2 to 100, preferably 3 to 80, more preferably 5 to 50, and even more preferably 10 to 30, in terms of silicon atoms (i.e., the average number of silicon atoms per molecule). In one embodiment, the upper limit of the weight-average molecular weight of the branched polysilane is usually 30,000, preferably 20,000, more preferably 10,000, even more preferably 5,000, still more preferably 2,000, and still more preferably 1,500, and the lower limit is usually 50, preferably 100, more preferably 150, even more preferably 200, still more preferably 300, and still more preferably 500. The average degree of polymerization and weight-average molecular weight of branched polysilanes can be measured, for example, using a GPC instrument (EcoSEC, HLC-8220GPC manufactured by Tosoh Corporation) and a GPC column (Shodex KF-803L, KF-802, and KF-801 manufactured by Showa Denko K.K., used in this order), with a column temperature of 40°C, tetrahydrofuran as the eluent (elution solvent), a flow rate of 1.00 mL / min, and polystyrene (manufactured by Sigma-Aldrich) as the standard sample. If the degree of polymerization and weight-average molecular weight of the branched-chain polysilane used are too low, heating during the formation of the release layer or processing of the laminate containing the obtained release layer may cause the branched-chain polysilane to vaporize or lead to problems due to insufficient film strength. Conversely, if the degree of polymerization and molecular weight of the branched-chain polysilane used are too high, depending on the type of solvent used to prepare the release agent composition, sufficient solubility may not be ensured, leading to precipitation in the composition or insufficient mixing with the resin, which may prevent the reproducibility of a highly uniform film. Therefore, from the viewpoint of obtaining laminates having a release layer that contributes to the suitable manufacturing of semiconductor devices with greater reproducibility, it is desirable that the degree of polymerization and weight-average molecular weight of the branched polysilane satisfy the above-mentioned range. 【0167】 The 5% weight loss temperature of branched polysilane is typically 300°C or higher, preferably 350°C or higher, more preferably 365°C or higher, even more preferably 380°C or higher, even more preferably 395°C or higher, and even more preferably 400°C or higher, from the viewpoint of obtaining a release layer with excellent heat resistance in a reproducible manner. The 5% weight loss temperature of branched polysilanes can be measured, for example, using a NETZSCH 2010SR under air conditions by increasing the temperature from room temperature (25°C) to 400°C at a rate of 10°C / min. 【0168】 When the semiconductor substrate and support substrate of a laminate are separated and then each substrate is cleaned with a cleaning agent composition, from the viewpoint of suitably removing the residue of the release layer on the substrate and from the viewpoint of reproducibly preparing a release agent composition with excellent uniformity, it is preferable that the branched-chain polysilane dissolves in any of the following: ether compounds such as tetrahydrofuran, aromatic compounds such as toluene, glycol ether ester compounds such as propylene glycol monomethyl ether acetate, ketone compounds such as cyclohexanone and methyl ethyl ketone, and glycol ether compounds such as propylene glycol monomethyl ether. In this case, dissolution means that when dissolution is attempted using a shaker at room temperature (25°C) to obtain a 10% by mass solution, it can be visually confirmed that dissolution has occurred within one hour. 【0169】 The branched polysilane may be in either a solid or liquid state at room temperature. 【0170】 Branched-chain polysilanes can be manufactured by referring to known methods described in, for example, Japanese Patent Publication No. 2011-208054, Japanese Patent Publication No. 2007-106894, Japanese Patent Publication No. 2007-145879, and WO2005 / 113648, or they can be obtained as commercially available products. Specific examples of commercially available products include, but are not limited to, the silicon material polysilane OGSOL SI-20-10 and SI-20-14 manufactured by Osaka Gas Chemical Co., Ltd. 【0171】 Suitable examples of branched polysilanes include, but are not limited to, the following. [ka] (Ph represents the phenyl group, R E Each of these independently represents a terminal substituent, an atom or a group, and nb (This indicates the number of repeating units.) 【0172】 The branched polysilane content in the above-mentioned stripping agent composition is usually 10 to 90% by mass relative to the film components. However, from the viewpoint of reproducibly achieving a film that cannot be suitably removed by organic solvents, acids, or chemicals used in the manufacture of semiconductor devices (alkaline developers, hydrogen peroxide, etc.) but can be suitably removed by the cleaning agent composition, the content is preferably 15 to 80% by mass, more preferably 20 to 70% by mass, even more preferably 25 to 60% by mass, and still more preferably 30 to 50% by mass. 【0173】 <<<Crosslinking agent>>> The release agent composition may also contain a crosslinking agent. While crosslinking agents can undergo crosslinking reactions through self-condensation, if crosslinkable substituents are present in the novolac resin, they can also undergo crosslinking reactions with those substituents. 【0174】 Specific examples of crosslinking agents are not limited to those mentioned above, but typically include phenolic crosslinking agents, melamine crosslinking agents, urea crosslinking agents, thiourea crosslinking agents, etc., which have crosslinking-forming groups such as hydroxymethyl groups, methoxymethyl groups, butoxymethyl groups, or other alkoxymethyl groups within their molecules. These may be low-molecular-weight compounds or high-molecular-weight compounds. The crosslinking agent contained in the release agent composition usually has two or more crosslinking groups, but from the viewpoint of achieving more suitable curing with good reproducibility, the number of crosslinking groups contained in the crosslinking agent compound is preferably 2 to 10, more preferably 2 to 6. From the viewpoint of achieving higher heat resistance, the crosslinking agent contained in the release agent composition preferably has an aromatic ring (e.g., a benzene ring, a naphthalene ring) in its molecule. Typical examples of such crosslinking agents, though not limited to these, include phenolic crosslinking agents. 【0175】 A phenolic crosslinking agent having a crosslinking group is a compound having a crosslinking group bonded to an aromatic ring, and having at least one of a phenolic hydroxyl group and an alkoxy group derived from a phenolic hydroxyl group. Examples of such alkoxy groups derived from a phenolic hydroxyl group include, but are not limited to, a methoxy group and a butoxy group. The aromatic ring to which the crosslinking group is bonded and the aromatic ring to which the phenolic hydroxyl group and / or the alkoxy group derived from the phenolic hydroxyl group are bonded are not limited to non-fused aromatic rings such as benzene rings, but may also be fused aromatic rings such as naphthalene rings and anthracene rings. When multiple aromatic rings exist within the molecule of a phenolic crosslinking agent, the crosslinking group, the phenolic hydroxyl group, and the alkoxy group derived from the phenolic hydroxyl group may be bonded to the same aromatic ring within the molecule, or they may be bonded to different aromatic rings. The aromatic ring to which the crosslinking group, phenolic hydroxyl group, and alkoxy group derived from the phenolic hydroxyl group are bonded may be further substituted with alkyl groups such as methyl, ethyl, and butyl groups, hydrocarbon groups such as aryl groups such as phenyl groups, halogen atoms such as fluorine atoms, etc. 【0176】 For example, specific examples of phenolic crosslinking agents having crosslinking groups include compounds represented by any of the formulas (L1) to (L4). 【0177】 [ka] 【0178】 In each formula, each R' independently represents a fluorine atom, an aryl group, or an alkyl group, and each R'' independently represents a hydrogen atom or an alkyl group, L 1 and L 2 Each of these independently represents a single bond, a methylene group, or a propane-2,2-diyl group, L 3t11, t12, and t13 are integers satisfying 2≦t11≦5, 1≦t12≦4, 0≦t23≦2, and t21+t22+t23≦5, t24, t25, and t26 are integers satisfying 2≦t24≦4, 1≦t25≦3, 0≦t26≦2, and t24+t25+t26≦5, and t27, t28, and t29 are integers satisfying 0≦t27≦4, 0≦t28≦ 4 is an integer satisfying 0≦t29≦4 and t27+t28+t29≦4, t31, t32 and t33 are integers satisfying 2≦t31≦4, 1≦t32≦3, 0≦t33≦2 and t31+t32+t33≦5, t41, t42 and t43 are integers satisfying 2≦t41≦3, 1≦t42≦2, 0≦t43≦1 and t41+t42+t43≦4, q1 is 2 or 3, q2 represents the number of repetitions and is an integer of 0 or more, specific examples of aryl groups and alkyl groups are the same as the specific examples below, but phenyl groups are preferred as aryl groups and methyl groups and t-butyl groups are preferred as alkyl groups. 【0179】 The following are specific examples of compounds represented by formulas (L1) to (L4), but are not limited to these. These compounds may be synthesized by known methods, or they may be available as products from companies such as Asahi Organic Chemicals Co., Ltd. or Honshu Chemical Industry Co., Ltd. 【0180】 [ka] 【0181】 [ka] 【0182】 [ka] 【0183】 [ka] 【0184】 A melamine-based crosslinking agent having a crosslinking group is a melamine derivative, a 2,4-diamino-1,3,5-triazine derivative, or a 2-amino-1,3,5-triazine derivative in which at least one hydrogen atom of the amino group bonded to the triazine ring is substituted with a crosslinking group, and the triazine ring may further have substituents such as aryl groups such as phenyl groups. Specific examples of melamine-based crosslinking agents having crosslinking groups include, but are not limited to, mono, bis, tris, tetrakiss, pentakiss, or hexakisalkoxymethyl melamines such as N,N,N',N',N”,N”-hexakis(methoxymethyl)melamine and N,N,N',N',N”,N”-hexakis(butoxymethyl)melamine, mono, bis, tris, or tetrakisalkoxymethyl benzoguanamines such as N,N,N',N'-tetrakis(methoxymethyl)benzoguanamine and N,N,N',N'-tetrakis(butoxymethyl)benzoguanamine. 【0185】 A urea-based crosslinking agent having a crosslinking group is a derivative of a urea bond-containing compound having a structure in which at least one hydrogen atom of the NH group constituting the urea bond is substituted with a crosslinking group. Specific examples of urea-based crosslinking agents having crosslinking groups include, but are not limited to, mono, bis, tris, or tetrakisalkoxymethyl glycoluryls such as 1,3,4,6-tetrakis(methoxymethyl) glycoluryl and 1,3,4,6-tetrakis(butoxymethyl) glycoluryl, and mono, bis, tris, or tetrakisalkoxymethylureas such as 1,3-bis(methoxymethyl)urea and 1,1,3,3-tetrakismethoxymethylurea. 【0186】 A thiourea-based crosslinking agent having a crosslinking group is a derivative of a thiourea bond-containing compound having a structure in which at least one hydrogen atom of the NH group constituting the thiourea bond is substituted with a crosslinking group. Specific examples of thiourea-based crosslinking agents having crosslinking groups include, but are not limited to, mono, bis, tris, or tetrakisalkoxymethylthioureas such as 1,3-bis(methoxymethyl)thiourea and 1,1,3,3-tetrakismethoxymethylthiourea. 【0187】 The amount of crosslinking agent contained in the release agent composition cannot be specified in general terms as it varies depending on the coating method adopted, the desired film thickness, etc. However, it is usually 0.01 to 50% by mass relative to the organic resin or polynuclear phenol derivative. From the viewpoint of achieving suitable curing and obtaining a laminate in which the semiconductor substrate and the support substrate can be separated well with good reproducibility, it is preferably 0.1% by mass or more, more preferably 1% by mass or more, even more preferably 3% by mass or more, still more preferably 5% by mass or more, preferably 45% by mass or less, more preferably 40% by mass or less, even more preferably 35% by mass or less, and still more preferably 30% by mass or less. 【0188】 <<<Acid Generator and Acid>>> For purposes such as promoting the crosslinking reaction, the release agent composition may contain an acid generator or an acid. 【0189】 Examples of acid generators include thermal acid generators and photoacid generators. The thermal acid generator is not particularly limited as long as it generates acid by heat. Specific examples include, but is not limited to, 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, K-PURE® CXC-1612, CXC-1614, TAG-2172, TAG-2179, TAG-2678, TAG-2689, TAG-2700 (manufactured by King Industries), and SI-45, SI-60, SI-80, SI-100, SI-110, SI-150 (manufactured by Sanshin Chemical Industry Co., Ltd.), and other alkyl organic sulfonates. 【0190】 Examples of photoacid generators include onium salt compounds, sulfonimide compounds, and disulfonyldiazomethane compounds. 【0191】 Specific examples of onium salt compounds include, but are not limited to, iodonium salt compounds such as diphenyliodonium hexafluorophosphonate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoron-butanesulfonate, diphenyliodonium perfluoron-octanesulfonate, diphenyliodonium camphorsulfonate, bis(4-tert-butylphenyl)iodonium camphorsulfonate, and bis(4-tert-butylphenyl)iodonium trifluoromethanesulfonate, as well as sulfonium salt compounds such as triphenylsulfonium nitrate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium nonafluoron-butanesulfonate, triphenylsulfonium camphorsulfonate, and triphenylsulfonium trifluoromethanesulfonate. 【0192】 Specific examples of sulfonimide compounds include, but are not limited to, N-(trifluoromethanesulfonyloxy)succinimide, N-(nonafluoron-butanesulfonyloxy)succinimide, N-(camphorsulfonyloxy)succinimide, and N-(trifluoromethanesulfonyloxy)naphthalimide. 【0193】 Specific examples of disulfonyl diazomethane compounds include, but are not limited to, bis(trifluoromethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(p-toluenesulfonyl)diazomethane, bis(2,4-dimethylbenzenesulfonyl)diazomethane, and methylsulfonyl-p-toluenesulfonyldiazomethane. 【0194】 Specific examples of acids include, but are not limited to, aryl sulfonic acids and pyridinium salts such as p-toluenesulfonic acid, pyridinium p-toluenesulfonic acid (pyridinium p-toluenesulfonate), pyridinium trifluoromethanesulfonate, pyridinium phenolsulfonic acid, 5-sulfosalicylic acid, 4-phenolsulfonic acid, 4-chlorobenzenesulfonic acid, benzenedisulfonic acid, and 1-naphthalenesulfonic acid, as well as their salts; aryl carboxylic acids and their salts such as salicylic acid, benzoic acid, hydroxybenzoic acid, and naphthalenecarboxylic acid; linear or cyclic alkyl sulfonic acids and their salts such as trifluoromethanesulfonic acid and camphorsulfonic acid; and linear or cyclic alkyl carboxylic acids and their salts such as citric acid. 【0195】 The amounts of acid generator and acid contained in the release agent composition cannot be specified in general terms, as they vary depending on the type of crosslinking agent used, the heating temperature when forming the film, etc., but are usually 0.01 to 5% by mass relative to the film components. 【0196】 <<<Surfactants>>> The stripping agent composition may contain surfactants for purposes such as adjusting the liquid properties of the composition itself and the film properties of the resulting film, or for reproducibly preparing a highly uniform stripping agent composition. Examples of surfactants include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether; polyoxyethylene alkyl allyl ethers such as polyoxyethylene octyl phenol ether and polyoxyethylene nonyl phenol ether; polyoxyethylene-polyoxypropylene block copolymers; sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, and sorbitan tristearate; polyoxyethylene sorbitan monolaurate and polyoxyethylene sorbitan monopalmitate. Examples include nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters like polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, and polyoxyethylene sorbitan tristearate; fluorine-based surfactants such as Eftop EF301, EF303, EF352 (manufactured by Tochem Products Co., Ltd., trade name), Megafac F171, F173, R-30, R-30N (manufactured by DIC Corporation, trade name), Florard FC430, FC431 (manufactured by Sumitomo 3M Co., Ltd., trade name), Asahiguard AG710, Surflon S-382, SC101, SC102, SC103, SC104, SC105, SC106 (manufactured by Asahi Glass Co., Ltd., trade name); and organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.). Surfactants can be used individually or in combination of two or more types. The amount of surfactant is usually 2% by mass or less relative to the film components of the stripping agent composition. 【0197】 <<<Solvent>>> The release agent composition preferably contains a solvent. Such solvents can include, for example, highly polar solvents that can readily dissolve film components such as the aforementioned organic resins, polynuclear phenol derivatives, branched polysilanes, and crosslinking agents. If necessary, low-polarity solvents may also be used to adjust viscosity, surface tension, etc. In this invention, low-polarity solvents are defined as those with a relative permittivity of less than 7 at a frequency of 100 kHz, and highly polar solvents are defined as those with a relative permittivity of 7 or more at a frequency of 100 kHz. Solvents can be used individually or in combination of two or more. 【0198】 Examples of highly polar solvents include amide solvents such as N,N-dimethylformamide, N,N-dimethylacetamide, N,N-dimethylisobutylamide, N-methylpyrrolidone, and 1,3-dimethyl-2-imidazolidinone; ketone solvents such as ethyl methyl ketone, isophorone, and cyclohexanone; cyano solvents such as acetonitrile and 3-methoxypropionitrile; polyhydric alcohol solvents such as ethylene glycol, diethylene glycol, triethylene glycol, dipropylene glycol, 1,3-butanediol, and 2,3-butanediol; monohydric alcohol solvents other than aliphatic alcohols such as propylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol monophenyl ether, triethylene glycol monomethyl ether, dipropylene glycol monomethyl ether, benzyl alcohol, 2-phenoxyethanol, 2-benzyloxyethanol, 3-phenoxybenzyl alcohol, and tetrahydrofurfuryl alcohol; and sulfoxide solvents such as dimethyl sulfoxide. 【0199】 Examples of low-polarity solvents include chlorine-based solvents such as chloroform and chlorobenzene; aromatic hydrocarbon solvents such as alkylbenzenes such as toluene, xylene, tetralin, cyclohexylbenzene, and decylbenzene; aliphatic alcohol solvents such as 1-octanol, 1-nonanol, and 1-decanol; ether-based solvents such as tetrahydrofuran, dioxane, anisole, 4-methoxytoluene, 3-phenoxytoluene, dibenzyl ether, diethylene glycol dimethyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, and triethylene glycol butyl methyl ether; and ester-based solvents such as methyl benzoate, ethyl benzoate, butyl benzoate, isoamyl benzoate, bis(2-ethylhexyl) phthalate, dibutyl maleate, dibutyl oxalate, hexyl acetate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, and diethylene glycol monobutyl ether acetate. 【0200】 The solvent content is determined appropriately considering the viscosity of the desired composition, the coating method used, the thickness of the film to be produced, etc., but is 99% by mass or less of the total composition, preferably 70 to 99% by mass of the total composition, that is, the amount of film components in that case is 1 to 30% by mass of the total composition. 【0201】 The viscosity and surface tension of the release agent composition are appropriately adjusted by changing the type of solvent used, their ratios, and the concentration of film components, taking into consideration various factors such as the application method used and the desired film thickness. 【0202】 In one aspect of the present invention, the release agent composition contains a glycol-based solvent, from the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with good storage stability with good reproducibility, and a composition that provides a highly uniform film with good reproducibility. The term "glycol-based solvent" as used herein refers to a general term for glycols, glycol monoethers, glycol diethers, glycol monoesters, glycol diesters, and glycol ester ethers. 【0203】 An example of a preferred glycol-based solvent is represented by formula (G). 【0204】 [ka] 【0205】 In formula (G), R G1 Each of these independently represents a linear or branched alkylene group having 2 to 4 carbon atoms, and R G2 and R G3 Each of these independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 8 carbon atoms, or an alkylacyl group in which the alkyl portion is a linear or branched alkyl group having 1 to 8 carbon atoms, n g This is an integer between 1 and 6. 【0206】 Specific examples of linear or branched alkylene groups having 2 to 4 carbon atoms include, but are not limited to, ethylene groups, trimethylene groups, 1-methylethylene groups, tetramethylene groups, 2-methylpropane-1,3-diyl groups, pentamethylene groups, and hexamethylene groups. In particular, linear or branched alkylene groups having 2 to 3 carbon atoms are preferred, and linear or branched alkylene groups having 3 carbon atoms are more preferred, from the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with high storage stability with good reproducibility, and a composition that gives a highly uniform film with good reproducibility. 【0207】 Specific examples of linear or branched alkyl groups having 1 to 8 carbon atoms include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, tert-butyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl group, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, and 3-methyl Examples of such groups include, but are not limited to, n-pentyl groups, 4-methyl-n-pentyl groups, 1,1-dimethyl-n-butyl groups, 1,2-dimethyl-n-butyl groups, 1,3-dimethyl-n-butyl groups, 2,2-dimethyl-n-butyl groups, 2,3-dimethyl-n-butyl groups, 3,3-dimethyl-n-butyl groups, 1-ethyl-n-butyl groups, 2-ethyl-n-butyl groups, 1,1,2-trimethyl-n-propyl groups, 1,2,2-trimethyl-n-propyl groups, 1-ethyl-1-methyl-n-propyl groups, and 1-ethyl-2-methyl-n-propyl groups. In particular, from the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with high storage stability with good reproducibility, and a composition that gives a highly uniform film with good reproducibility, methyl groups and ethyl groups are preferred, with methyl groups being more preferred. 【0208】 Specific examples of the alkyl group in which the alkyl portion is a linear or branched alkyl group having 1 to 8 carbon atoms include the same examples as those described above. In particular, from the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with high storage stability with good reproducibility, and a composition that gives a highly uniform film with good reproducibility, methyl carbonyl groups and ethyl carbonyl groups are preferred, with methyl carbonyl groups being more preferred. 【0209】 n gFrom the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with high storage stability with good reproducibility, and a composition that gives a highly uniform film with good reproducibility, the ratio is preferably 4 or less, more preferably 3 or less, even more preferably 2 or less, and most preferably 1. 【0210】 From the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with high storage stability with good reproducibility, and a composition that gives a highly uniform film with good reproducibility, in formula (G), preferably, R G2 and R G3 At least one of them is a linear or branched alkyl group having 1 to 8 carbon atoms, more preferably R G2 and R G3 One of the components is a linear or branched alkyl group having 1 to 8 carbon atoms, and the other is an alkylacyl group in which the hydrogen atom or the alkyl portion is a linear or branched alkyl group having 1 to 8 carbon atoms. 【0211】 From the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with high storage stability with good reproducibility, and a composition that provides a highly uniform film with good reproducibility, the content of the glycol-based solvent is preferably 50% by mass or more, more preferably 70% by mass or more, even more preferably 80% by mass or more, even more preferably 90% by mass or more, and even more preferably 95% by mass or more, relative to the solvent contained in the release agent composition. From the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with high storage stability with good reproducibility, and a composition that provides a highly uniform film with good reproducibility, in a release agent composition, the film components are uniformly dispersed or dissolved in the solvent, preferably dissolved. 【0212】 The release agent composition can be produced, for example, by mixing an organic resin or a polynuclear phenol derivative with a solvent and, if necessary, a crosslinking agent. The mixing order is not particularly limited, but examples of methods for easily and reproducibly producing a release agent composition include, but are not limited to, a method in which an organic resin or polynuclear phenol derivative and a crosslinking agent are dissolved in a solvent at the same time, or a method in which a portion of the organic resin or polynuclear phenol derivative and the crosslinking agent are dissolved in a solvent, the remainder is dissolved separately in a solvent, and the resulting solutions are mixed. Furthermore, when preparing the release agent composition, heating may be used as appropriate, to the extent that the components do not decompose or deteriorate. In the present invention, for the purpose of removing foreign matter, the solvent or solution used may be filtered using a filter or the like during the manufacturing process of the release agent composition or after all components have been mixed. 【0213】 The thickness of the release layer is not particularly limited, but is usually 5 nm to 100 μm, 10 nm to 10 μm in one embodiment, 50 nm to 1 μm in another embodiment, and 100 nm to 700 nm in yet another embodiment. 【0214】 The method for forming a release layer from a release agent composition is not particularly limited, but examples include the method for manufacturing a laminate described later. 【0215】 The method for manufacturing the laminate is not particularly limited, but examples include the method for manufacturing the laminate described later. 【0216】 An example of the laminate of the present invention will be explained with reference to the figure. Figure 1 is a schematic cross-sectional view of an example of a laminate. The laminate in Figure 1 comprises a semiconductor substrate 1, an adhesive layer 2, and a support substrate 3 in that order. The adhesive layer 2 is provided between the semiconductor substrate 1 and the support substrate 3. The adhesive layer 2 is in contact with the semiconductor substrate 1. The release layer 3 is in contact with the adhesive layer 2 and the support substrate 4. 【0217】 Figure 2 is a schematic cross-sectional view of another example of a laminate. The laminate in Figure 2 comprises a semiconductor substrate 1, an adhesive layer 2, a release layer 4, and a support substrate 3 in that order. The adhesive layer 2 and the release layer 4 are provided between the semiconductor substrate 1 and the support substrate 3. The adhesive layer 2 is in contact with the semiconductor substrate 1. The release layer 4 is in contact with both the adhesive layer 2 and the support substrate 3. Furthermore, if the laminate has a release layer, the arrangement of the adhesive layer and the release layer may be reversed from the arrangement shown in Figure 2. In other words, if the laminate has a release layer, the release layer may be in contact with the semiconductor substrate, and the adhesive layer may be in contact with both the release layer and the support substrate. However, when the separation of the semiconductor substrate and the support substrate is performed by light irradiation, it is preferable that the support substrate is light-transmitting and that the release layer is provided between the adhesive layer and the support substrate. 【0218】 (Method of manufacturing a laminate) The present invention provides a method for manufacturing a laminate, which includes an adhesive coating layer formation step, a bonding step, and an adhesive layer formation step, and further includes other steps as necessary. The adhesive coating layer formation step is a step in which the adhesive composition of the present invention is applied to a semiconductor substrate or a support substrate to form an adhesive coating layer. The bonding process is a process in which a semiconductor substrate and a support substrate are bonded together via an adhesive coating layer. The adhesive layer formation process involves heating the semiconductor substrate, the adhesive coating layer, and the support substrate, and forming an adhesive layer from the adhesive coating layer. 【0219】 <Adhesive coating layer formation process> The adhesive coating layer formation step is a step in which the adhesive composition of the present invention is applied to a semiconductor substrate or a support substrate to form an adhesive coating layer. 【0220】 One method for forming an adhesive coating layer from an adhesive composition is, for example, coating. The coating method is usually spin coating. Furthermore, as another method for forming an adhesive coating layer from an adhesive composition, a coating film may be formed from the adhesive composition separately by a spin coating method or the like, and the sheet-like coating film may be attached to the surface of a semiconductor substrate or support substrate as an adhesive coating layer. 【0221】 Heating is performed as needed when forming an adhesive coating layer from the adhesive composition. The heating temperature of the applied adhesive composition cannot be specified in general terms, as it varies depending on the type and amount of adhesive components contained in the adhesive composition, whether or not a solvent is included, the boiling point of the solvent used, the desired thickness of the adhesive layer, etc. However, it is usually 80 to 150°C, and the heating time is usually 30 seconds to 5 minutes. If the adhesive composition contains a solvent, the applied adhesive composition is usually heated. Heating can be done using a hot plate, oven, etc. 【0222】 <Lamination process> The bonding process involves bonding a semiconductor substrate and a support substrate via an adhesive coating layer. If the laminate has a release layer, the bonding process involves bonding the semiconductor substrate and the support substrate via an adhesive coating layer and a release agent coating layer. 【0223】 In the bonding process, for example, a load is applied in the thickness direction of the semiconductor substrate and the support substrate while performing heat treatment, vacuum treatment, or both, to bond the semiconductor substrate and the support substrate via the adhesive coating layer. The choice of which treatment conditions to adopt—heat treatment, vacuum treatment, or a combination of both—is determined appropriately after considering various factors such as the type of adhesive composition, the thickness of the film obtained from the adhesive composition, and the desired adhesive strength. 【0224】 The heat treatment temperature is usually determined appropriately from the range of 20 to 150°C, from the viewpoint of removing the solvent if the composition contains one, and from the viewpoint of softening the adhesive coating layer to achieve suitable bonding. In particular, from the viewpoint of suppressing or avoiding excessive hardening or unwanted deterioration of the thermosetting component, it is preferably 130°C or lower, more preferably 90°C or lower. The heating time is appropriately determined depending on the heating temperature and the type of adhesive, but from the viewpoint of reliably achieving suitable bonding, it is usually 30 seconds or more, preferably 1 minute or more, but from the viewpoint of suppressing deterioration of the adhesive layer and other components, it is usually 10 minutes or less, preferably 5 minutes or less. 【0225】 Depressurization treatment can be performed by exposing the object to a pressure of 10 to 10,000 Pa. The depressurization treatment time is usually 1 to 30 minutes. 【0226】 From the viewpoint of obtaining a laminate in which the substrates can be separated well with good reproducibility, the semiconductor substrate and the support substrate are preferably bonded by a reduced pressure treatment, and more preferably by a combination of heat treatment and reduced pressure treatment. 【0227】 The load applied in the thickness direction to the semiconductor substrate and the support substrate is not particularly limited, as long as it does not adversely affect the semiconductor substrate, the support substrate, and the layers between them, and can firmly adhere them together, but it is usually in the range of 10 to 1,000 N. 【0228】 <Adhesive layer formation process> The adhesive layer formation process involves heating the semiconductor substrate, the adhesive coating layer, and the support substrate, and forming an adhesive layer from the adhesive coating layer. This heating process is sometimes referred to as post-heating. Furthermore, if the laminate has a release layer, the adhesive layer formation process involves heating the semiconductor substrate, adhesive coating layer, release agent coating layer, and support substrate, forming an adhesive layer from the adhesive coating layer, and forming a release layer from the release agent coating layer. 【0229】 The post-heating temperature is preferably 120°C or higher from the viewpoint of achieving a sufficient curing speed, and preferably 260°C or lower from the viewpoint of preventing deterioration of the substrate and each layer. The post-heating time is usually 1 minute or more, preferably 5 minutes or more, from the viewpoint of achieving suitable bonding of the substrates and layers constituting the laminate, and is usually 180 minutes or less, preferably 120 minutes or less, from the viewpoint of suppressing or avoiding adverse effects on each layer due to excessive heating. 【0230】 Further heating can be done using a hot plate, oven, etc. When performing post-heating using a hot plate, the semiconductor substrate and the support substrate of the laminate may be placed facing downwards during heating. However, from the viewpoint of achieving suitable delamination with good reproducibility, it is preferable to perform post-heating with the semiconductor substrate facing downwards. In other words, heating can be performed from either the semiconductor substrate side or the support substrate side, and it is preferable to perform it from the semiconductor substrate side. 【0231】 One of the purposes of the post-heat treatment is to achieve a more suitable self-supporting adhesive layer and release layer, and to suitably achieve thermal curing of the adhesive coating layer (particularly curing by hydrosilylation reaction). 【0232】 <Process for forming the release agent coating layer> If the laminate has a release layer, the method for manufacturing the laminate includes a step of forming a release agent coating layer. The release agent coating layer formation process is a process in which a release agent coating layer is formed from the release agent composition. 【0233】 The release agent coating layer may be formed on a semiconductor substrate, on a support substrate, or on an adhesive coating layer. One method for forming a release agent coating layer from a release agent composition is to apply the release agent composition to the surface of a support substrate and then heat it. The coating method is not particularly limited, but it is usually the spin coating method. As an alternative method for forming a release agent coating layer from a release agent composition, a coating film can be formed separately from the release agent composition by a spin coating method or the like, and the sheet-like coating film can be attached to the surface of a semiconductor substrate, a support substrate, or an adhesive coating layer as a release agent coating layer. 【0234】 Heating is performed as needed when forming a release agent coating layer from the release agent composition. The heating temperature of the applied release agent composition cannot be specified in general terms, as it varies depending on the type and amount of acid generator, the boiling point of the solvent used, and the desired thickness of the release layer. However, from the viewpoint of reproducibly achieving a suitable release layer, it is 80°C or higher, and from the viewpoint of suppressing the decomposition of the acid generator, it is 300°C or lower. The heating time is usually appropriately determined in the range of 10 seconds to 10 minutes, depending on the heating temperature. If the stripping agent composition contains a solvent, the applied stripping agent composition is usually heated. Heating can be done using a hot plate, oven, etc. 【0235】 The thickness of the release agent coating layer obtained by applying the release agent composition and heating it if necessary is typically around 5 nm to 100 μm, and is ultimately determined as appropriate so that it falls within the aforementioned range of release layer thickness. 【0236】 Furthermore, if the release agent composition is a curable composition, curing may occur when the release agent coating layer is formed from the release agent composition, or when the release layer is formed from the release agent coating layer. In addition, some curing may occur when the release agent coating layer is formed from the release agent composition, and some curing may also occur when the release layer is formed from the release agent coating layer. 【0237】 (Method for manufacturing processed semiconductor substrates) The present invention provides a method for manufacturing a processed semiconductor substrate, comprising at least a first step and a second step, and optionally including other steps such as a third step. The first step is the process of processing the semiconductor substrate of the laminate according to the present invention. The second step is the process of separating the semiconductor substrate and the support substrate that were processed in the first step. The third step is to clean the separated semiconductor substrate with a cleaning agent composition. 【0238】 The processing applied to the semiconductor substrate in the first step is, for example, processing the side opposite the circuit surface of the wafer, such as thinning the wafer by polishing the back surface. Subsequently, through-silicon viable (TSV) electrodes are formed, and then the thinned wafer is peeled off the support substrate to form a wafer laminate, which is then 3D mounted. Before or after this, wafer back-side electrodes are also formed. During the wafer thinning and TSV processes, heat of approximately 250-350°C is applied while the wafer is bonded to the support substrate. In the present invention, the laminate, for example, not only the semiconductor substrate and support substrate, but also the adhesive layer and release layer typically possess heat resistance to this load. Furthermore, the processing is not limited to those described above, and also includes, for example, the implementation of the semiconductor component mounting process when a substrate is temporarily bonded to a support substrate to support the substrate for mounting semiconductor components. 【0239】 The second step is not particularly limited, as long as it is a step in which the semiconductor substrate processed in the first step is separated from the support substrate. For example, one method involves mechanically debonding the semiconductor substrate using equipment with a sharp edge (a so-called debonder). Specifically, for instance, a sharp edge is inserted between the semiconductor substrate and the support substrate, and then the semiconductor substrate and the support substrate are separated. Furthermore, in the second step, the method for separating (peeling) the semiconductor substrate from the support substrate may be peeling, for example, by irradiating the peeling layer with light and then tearing the semiconductor substrate apart from the support substrate. By irradiating the release layer with light from the support substrate side, the release layer is altered as described above (for example, separation or decomposition of the release layer), and then, for example, one of the substrates can be easily lifted to separate the semiconductor substrate from the support substrate. 【0240】 The wavelength of light used for peeling is not particularly limited as long as it is absorbed by the peeled layer, but it is usually in the range of 100 to 600 nm. For example, suitable wavelengths are 308 nm, 343 nm, 355 nm, or 365 nm. The amount of light required for peeling is an amount that can cause a suitable alteration of the peeled layer, such as decomposition. The light used for peeling may be laser light or non-laser light emitted from a light source such as a lamp. 【0241】 Irradiation of the release layer with light does not necessarily have to be performed over the entire area of ​​the release layer. Even if there is a mixture of irradiated and unirradiated areas, if the release ability of the release layer as a whole is sufficiently improved, the semiconductor substrate and the support substrate can be separated by a small external force, such as lifting the support substrate. The ratio and positional relationship of the irradiated and unirradiated areas will vary depending on the type and specific composition of the adhesive used, the thickness of the adhesive layer, the thickness of the release layer, the intensity of the irradiated light, etc., but a person skilled in the art can set the conditions appropriately without requiring excessive testing. For these reasons, according to one example of the manufacturing method of the processed semiconductor substrate of the present invention, for example, when the support substrate of the laminate used is light-transmitting, it is possible to shorten the light irradiation time when delamination is performed by light irradiation from the support substrate side, and as a result, not only is an improvement in throughput expected, but the semiconductor substrate and the support substrate can be easily and efficiently separated by light irradiation alone, avoiding physical stress for delamination. Typically, the light irradiation dose for delamination is 50-3,000 mJ / cm². 2 The irradiation time is determined appropriately according to the wavelength and irradiation dose. The light irradiation may be performed using laser light, or it may be performed using non-laser light from a light source such as an ultraviolet lamp. 【0242】 In the third step, the separated semiconductor substrate is cleaned by spraying the cleaning agent composition onto its surface or by immersing it in the cleaning agent composition, followed by rinsing with a solvent and drying. Examples of cleaning agent compositions include the following: 【0243】 Detergent compositions typically contain a salt and a solvent. A suitable example of a detergent composition is a detergent composition comprising a quaternary ammonium salt and a solvent. Quaternary ammonium salts are composed of a quaternary ammonium cation and an anion, and are not particularly limited as long as they are used for this type of application. Typical examples of such quaternary ammonium cations include tetra(hydrocarbon)ammonium cations. On the other hand, the anion that pairs with it is the hydroxide ion (OH - ); fluoride ion (F - ), chloride ions (Cl - ), bromine ions (Br - ), iodide ion (I - ) and other halogen ions; tetrafluoroborate ions (BF4 - ); Hexafluorophosphate ion (PF6 - Examples include, but are not limited to, these. 【0244】 The quaternary ammonium salt is preferably a halogen-containing quaternary ammonium salt, and more preferably a fluorine-containing quaternary ammonium salt. In quaternary ammonium salts, halogen atoms may be contained in the cation or the anion, but are preferably contained in the anion. 【0245】 In one preferred embodiment, the fluorine-containing quaternary ammonium salt is tetra(hydrocarbon)ammonium fluoride. Specific examples of hydrocarbon groups in tetraammonium fluoride include alkyl groups having 1 to 20 carbon atoms, alkenyl groups having 2 to 20 carbon atoms, alkynyl groups having 2 to 20 carbon atoms, and aryl groups having 6 to 20 carbon atoms. In a more preferred embodiment, tetra(hydrocarbon)ammonium fluoride comprises tetraalkylammonium fluoride. Specific examples of tetraalkylammonium fluoride include, but are not limited to, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, and tetrabutylammonium fluoride (also known as tetrabutylammonium fluoride). Among these, tetrabutylammonium fluoride is preferred. 【0246】 Quaternary ammonium salts such as tetraammonium(hydrocarbon)fluoride may be used in hydrate form. Furthermore, quaternary ammonium salts such as tetraammonium(hydrocarbon)fluoride may be used individually or in combination of two or more types. The amount of quaternary ammonium salt is not particularly limited as long as it is soluble in the solvent contained in the detergent composition, but it is usually 0.1 to 30% by mass relative to the detergent composition. 【0247】 The solvent contained in the detergent composition is not particularly limited as long as it is used for this type of application and dissolves salts such as quaternary ammonium salts. However, from the viewpoint of obtaining a detergent composition with excellent cleaning properties with good reproducibility, and from the viewpoint of dissolving salts such as quaternary ammonium salts well and obtaining a detergent composition with excellent uniformity, the detergent composition preferably contains one or more amide-based solvents. 【0248】 A suitable example of an amide solvent is an acid amide derivative represented by formula (Z). [ka] 【0249】 In the formula, R 0 R represents an ethyl group, a propyl group, or an isopropyl group, with ethyl and isopropyl groups being preferred, and ethyl groups being more preferred. A and R B Each of these independently represents an alkyl group having 1 to 4 carbon atoms. The alkyl group having 1 to 4 carbon atoms may be linear, branched, or cyclic, and specific examples include methyl, ethyl, propyl, isopropyl, cyclopropyl, n-butyl, isobutyl, s-butyl, t-butyl, and cyclobutyl groups. Of these, R A and R B The groups are preferably methyl or ethyl, more preferably both are methyl or ethyl, and even more preferably both are methyl. 【0250】 Examples of acid amide derivatives represented by formula (Z) include N,N-dimethylpropionamide, N,N-diethylpropionamide, N-ethyl-N-methylpropionamide, N,N-dimethylbutyrate amide, N,N-diethylbutyrate amide, N-ethyl-N-methylbutyrate amide, N,N-dimethylisobutyrate amide, N,N-diethylisobutyrate amide, and N-ethyl-N-methylisobutyrate amide. Of these, N,N-dimethylpropionamide and N,N-dimethylisobutylamide are particularly preferred, and N,N-dimethylpropionamide is more preferred. 【0251】 The acid amide derivative represented by formula (Z) may be synthesized by substitution reaction between the corresponding carboxylic acid ester and amine, or a commercially available product may be used. 【0252】 Another example of a preferred amide solvent is a lactam compound represented by formula (Y). [ka] 【0253】 In equation (Y), R 101 R represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. 102 The symbol represents an alkylene group having 1 to 6 carbon atoms. Specific examples of alkyl groups having 1 to 6 carbon atoms include methyl, ethyl, n-propyl, and n-butyl groups, while specific examples of alkylene groups having 1 to 6 carbon atoms include methylene, ethylene, trimethylene, tetramethylene, pentamethylene, and hexamethylene groups, but are not limited to these. 【0254】 Specific examples of lactam compounds represented by formula (Y) include α-lactam compounds, β-lactam compounds, γ-lactam compounds, δ-lactam compounds, etc., which can be used individually or in combination of two or more. 【0255】 In one preferred embodiment, the lactam compound represented by formula (Y) comprises 1-alkyl-2-pyrrolidone (N-alkyl-γ-butyrolactam), in one more preferred embodiment, comprises N-methylpyrrolidone (NMP) or N-ethylpyrrolidone (NEP), and in one even more preferred embodiment, comprises N-methylpyrrolidone (NMP). 【0256】 The cleaning agent composition may contain one or more other organic solvents different from the amide compounds described above. Such other organic solvents are not particularly limited, as long as they are organic solvents that are compatible with the amide compounds described above and are used for this type of application. Other preferred solvents include, but are not limited to, alkylene glycol dialkyl ethers, aromatic hydrocarbon compounds, and cyclic structure-containing ether compounds. The amount of other organic solvents, different from the amide compounds mentioned above, is usually determined appropriately, typically at a concentration of 95% by mass or less of the solvent in the detergent composition, provided that the quaternary ammonium salts contained in the detergent composition do not precipitate or separate and mix uniformly with the amide compounds mentioned above. The cleaning agent composition may contain water as a solvent, but to avoid corrosion of the substrate, etc., only organic solvents are usually intentionally used. However, in this case, it is not ruled out that trace amounts of water contained in the salt's hydrated water or in the organic solvent may also be present in the cleaning agent composition. The water content of the cleaning agent composition is usually 5% by mass or less. 【0257】 In the method for manufacturing a processed semiconductor substrate of the present invention, the processed semiconductor substrate manufactured through the third step is well cleaned by the cleaning agent composition. However, this does not prevent further cleaning of the surface of the processed semiconductor substrate using a removal tape or the like, and if necessary, the surface may be further cleaned using a removal tape or the like. 【0258】 The components and method elements relating to the above-described steps of the method for manufacturing the processed semiconductor substrate of the present invention may be modified in various ways as long as they do not depart from the spirit of the present invention. The method for manufacturing a processed semiconductor substrate according to the present invention may include steps other than those described above. [Examples] 【0259】 The present invention will be described in more detail below with reference to examples, but the present invention is not limited to the following examples. The apparatus used is as follows. 【0260】 [Device] (1) Mixer: ARE-500, manufactured by Thinky Co., Ltd. (2) Vacuum bonding machine: XBS300 manufactured by Züss Microtech Co., Ltd. (3) Thin film stress measuring device: Toho Technology Co., Ltd. FLX-3300-T (4) Optical film thickness gauge (film thickness measurement): F-50 manufactured by Filmetrix Co., Ltd. 【0261】 [1] Preparation of adhesive composition [Comparative Example 1] In a 600 mL stirring container specifically for a rotation-orbit mixer, 54.4 g of vinyl group-containing MQ resin (manufactured by Wacker Chem Co., Ltd.) as polysiloxane (a1), 7.3 g of p-menthane (manufactured by Nippon Terpene Chemical Co., Ltd.) as a solvent, 3.1 g of propylene glycol 1-monomethyl ether 2-acetate (manufactured by Tokyo Chemical Industry Co., Ltd.) as a secondary solvent, and 0.22 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) as a crosslinking inhibitor were added, and the mixture was stirred in a rotation-orbit mixer for 5 minutes to obtain mixture (I). To the obtained mixture (I), 8.3 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Ltd.) with a viscosity of 100 mPa·s as polysiloxane (a2) and 24.5 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem Ltd.) with a viscosity of 200 mPa·s as polysiloxane (a1) were added, and the mixture was stirred for a further 5 minutes in a rotary-orbit mixer to obtain mixture (II). Mixture (III) was obtained by stirring a 50 mL screw-cap tube with 0.44 g of platinum catalyst (A2, manufactured by Wacker Chem Co., Ltd.) and 3.6 g of vinyl group-containing linear polydimethylsiloxane (a1), with a viscosity of 1000 mPa·s, manufactured by Wacker Chem Co., Ltd., in a rotary-orbit mixer for 5 minutes. Mixture (II) was mixed with 2.0 g of mixture (III), and stirred for a further 5 minutes in a rotary-orbit mixer. The resulting mixture was filtered through a 300-mesh nylon filter to obtain the adhesive composition. The viscosity of the adhesive composition, as measured using a rotational viscometer, was 700 mPa·s. 【0262】 [Example 1] An adhesive composition was obtained in the same manner as in Comparative Example 1, except that 0.22 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) was replaced with 0.22 g of 2,2'-bipyridyl (manufactured by Tokyo Chemical Industry Co., Ltd.). 【0263】 [Example 2] An adhesive composition was obtained in the same manner as in Comparative Example 1, except that 0.22 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) was replaced with 0.22 g of 4,4'-dimethyl-2,2'-bipyridyl (manufactured by Tokyo Chemical Industry Co., Ltd.). 【0264】 [Example 3] An adhesive composition was obtained in the same manner as in Comparative Example 1, except that 0.22 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) was replaced with 0.22 g of 5,5'-dimethyl-2,2'-bipyridyl (manufactured by Tokyo Chemical Industry Co., Ltd.). 【0265】 [Example 4] An adhesive composition was obtained in the same manner as in Comparative Example 1, except that 0.22 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) was replaced with 0.22 g of 4,4'-dinonyl-2,2'-bipyridyl (manufactured by Tokyo Chemical Industry Co., Ltd.). Note that the nonyl group in 4,4'-dinonyl-2,2'-bipyridyl is an n-nonyl group. 【0266】 [Example 5] An adhesive composition was obtained in the same manner as in Comparative Example 1, except that 0.22 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) was replaced with 0.22 g of tributylphosphine (manufactured by Tokyo Chemical Industry Co., Ltd., (CH3CH2CH2CH2)3P). 【0267】 [Example 6] An adhesive composition was obtained in the same manner as in Comparative Example 1, except that 0.22 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) was replaced with 0.22 g of tris(4-methoxyphenyl)phosphine (manufactured by Tokyo Chemical Industry Co., Ltd.). 【0268】 [2] Manufacturing of laminates [Examples] The adhesive compositions obtained in Examples 1 to 6 and Comparative Example 1 were spin-coated onto a 300 mm silicon wafer (775 μm thick) as the device substrate, and then heated on a hot plate at 90°C for 90 seconds to form an adhesive coating layer on the silicon wafer, which is the semiconductor substrate, so that the final film thickness in the resulting laminate was 30 μm. On the other hand, a 300 mm silicon wafer (775 μm thick) was used as the carrier substrate. Then, using a bonding device, two silicon wafers were bonded together, sandwiching an adhesive coating layer between them, and a laminate was fabricated by post-heat treatment at 200°C for 10 minutes. The bonding was performed at a temperature of 23°C and a reduced pressure of 1,500 Pa. The post-heat treatment was performed by heating the bonded laminate from the substrate side on the device side using a hot plate. The warpage of the resulting laminate was measured using a thin-film stress measuring device. Warpage was measured by measuring the height displacement from the notch of the bonded wafer to the portion corresponding to the wafer diameter, and the difference between the maximum and minimum values ​​was defined as the warpage value. Height measurements along the wafer diameter were performed in a 6 mm width, excluding the 5 mm at both ends near the outer edge from the measurement range. The warpage measurement results are shown in Table 1. 【0269】 [Table 1] 【0270】 The results in Table 1 show that, compared to the case using the crosslinking inhibitor listed in Comparative Example 1, the values ​​of warpage of the bonded wafers were significantly reduced when using the crosslinking inhibitors used in Examples 1 to 6. This is thought to be because the curing rate of the composition was controlled by the crosslinking inhibitor, which relieved the stress in the final laminate. [Explanation of symbols] 【0271】 1. Semiconductor substrate 2 Adhesive layer 3. Support substrate 4. Exfoliation layer

Claims

[Claim 1] A laminate comprising a semiconductor substrate, a support substrate, and an adhesive layer provided between the semiconductor substrate and the support substrate, The adhesive layer is formed from a cured product of the adhesive composition, The adhesive composition contains a polyorganosiloxane having alkenyl groups with 2 to 40 carbon atoms bonded to silicon atoms, a polyorganosiloxane having Si-H groups, a platinum group metal catalyst, and a crosslinking inhibitor. A laminate comprising, in which the crosslinking inhibitor contains at least one of a pyridine ring-containing compound and a phosphorus-containing organic compound. [Claim 2] The pyridine ring-containing compound contains a compound represented by the following formula (1): The phosphorus-containing organic compound contains a compound represented by the following formula (2): The laminate according to claim 1. 【Chemistry 1】 (In formula (1) above, R １ and R ２ Each independently represents a hydrogen atom or an alkyl group which may have substituents, or R １ and R ２ Together, they form an aromatic hydrocarbon ring which may have substituents or alkyl groups, or they form an -O-. R ３ and R ４ Each of these independently represents a hydrogen atom or an alkyl group which may have substituents. R ５ and R ６ Each of these independently represents a hydrogen atom or an alkyl group which may have substituents. R ７ and R ８ each independently represents a hydrogen atom or an alkyl group which may have a substituent. However, R ５ and R ７ In lieu of the above definition, they may together form an aromatic hydrocarbon ring which may have substituents or alkyl groups. However, R ６ and R ８ (In lieu of the above definition, these may together form an aromatic hydrocarbon ring which may have substituents or alkyl groups.) 【Chemistry 2】 (In formula (2) above, R １１ ~R １３ Each of these independently represents a hydrocarbon group that may have substituents. [Claim 3] The laminate according to claim 2, wherein the crosslinking inhibitor contains a compound represented by formula (1). [Claim 4] In formula (1) above, R １ , R ２ , R ７ , and R ８ represents a hydrogen atom, R ３ ~R ６ The laminate according to claim 2, wherein each of them independently represents a hydrogen atom or an alkyl group. [Claim 5] The laminate according to claim 2, wherein the number of carbon atoms in each alkyl group in formula (1) is independently 1 to 12. [Claim 6] The laminate according to claim 2, wherein the crosslinking inhibitor contains a compound represented by formula (2). [Claim 7] In the above formula (2), R １１ ~R １３ The laminate according to claim 2, wherein each independently represents an optionally substituted alkyl group or an optionally substituted phenyl group. [Claim 8] The laminate according to claim 7, wherein the number of carbon atoms in each alkyl group in formula (2) is independently 1 to 12. [Claim 9] A method for manufacturing a processed semiconductor substrate, A first step in which the semiconductor substrate of the laminate according to any one of claims 1 to 8 is processed, A second step involves separating the semiconductor substrate processed in the first step from the support substrate, A method for manufacturing a processed semiconductor substrate, including the method described above. [Claim 10] An adhesive composition used for forming an adhesive layer in a laminate having a semiconductor substrate, a support substrate, and an adhesive layer provided between the semiconductor substrate and the support substrate, It contains a polyorganosiloxane having alkenyl groups with 2 to 40 carbon atoms bonded to silicon atoms, a polyorganosiloxane having Si-H groups, a platinum group metal catalyst, and a crosslinking inhibitor. The adhesive composition wherein the crosslinking inhibitor contains at least one of a pyridine ring-containing compound and a phosphorus-containing organic compound. [Claim 11] The pyridine ring-containing compound contains a compound represented by the following formula (1): The phosphorus-containing organic compound contains a compound represented by the following formula (2): The adhesive composition according to claim 10. 【Transformation 3】 (In formula (1) above, R １ and R ２ Each independently represents a hydrogen atom or an alkyl group which may have substituents, or R １ and R ２ Together, they form an aromatic hydrocarbon ring which may have substituents or alkyl groups, or they form an -O-. R ３ and R ４ Each of these independently represents a hydrogen atom or an alkyl group which may have substituents. R ５ and R ６ Each of these independently represents a hydrogen atom or an alkyl group which may have substituents. R ７ and R ８ Each of these independently represents a hydrogen atom or an alkyl group which may have substituents. However, R ５ and R ７ In lieu of the above definition, they may together form an aromatic hydrocarbon ring which may have substituents or alkyl groups. However, R ６ and R ８ (In lieu of the above definition, these may together form an aromatic hydrocarbon ring which may have substituents or alkyl groups.) 【Chemistry 4】 (In formula (2) above, R １１ ~R １３ Each of these independently represents a hydrocarbon group that may have substituents. [Claim 12] The adhesive composition according to claim 11, wherein the crosslinking inhibitor contains a compound represented by formula (1). [Claim 13] In formula (1) above, R １ , R ２ , R ７ , and R ８ represents a hydrogen atom, R ３ ~R ６ The adhesive composition according to claim 11, wherein each of them independently represents a hydrogen atom or an alkyl group. [Claim 14] The adhesive composition according to claim 11, wherein the number of carbon atoms in each alkyl group in formula (1) is independently 1 to 12. [Claim 15] The adhesive composition according to claim 11, wherein the crosslinking inhibitor contains a compound represented by formula (2). [Claim 16] In the above formula (2), R １１ ~R １３ Each independently represents either an optionally substituted alkyl group or an optionally substituted phenyl group. The adhesive composition according to claim 11. [Claim 17] The adhesive composition according to claim 16, wherein the number of carbon atoms in each alkyl group in formula (2) is independently 1 to 12. [Claim 18] A step of applying an adhesive composition according to any one of claims 10 to 17 onto a semiconductor substrate or a support substrate to form an adhesive coating layer, The semiconductor substrate and the support substrate are bonded together via the adhesive coating layer, The semiconductor substrate, the adhesive coating layer, and the support substrate are heated, and an adhesive layer is formed from the adhesive coating layer. A method for manufacturing a laminate, including the following: [Claim 19] The method for manufacturing a laminate according to claim 18, wherein the heating is performed from the semiconductor substrate side or the support substrate side.

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